04-07-2013 дата публикации
Номер: US20130171779A1
Принадлежит:
According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern. 1. A composition for manufacturing an oxide semiconductor comprising:a metal oxalate; anda solvent.2. The composition of claim 1 , wherein the metal oxalate comprises at least one selected from the group of zinc claim 1 , tin claim 1 , indium and gallium claim 1 , which is combined with oxalate ion.3. The composition of claim 1 , wherein the metal oxalate forms a complex compound with at least one of a halogen acid claim 1 , water claim 1 , nitric acid claim 1 , acetic acid claim 1 , sulfuric acid claim 1 , phosphoric acid claim 1 , oxalic acid claim 1 , perchloric acid and fluoboric acid.5. The composition of claim 3 , wherein the complex compound forms at least one of a cluster claim 3 , nanoparticle and sol-gel claim 3 , which is represented by at least one of the following Chemical Formulas 2 and 3.{'br': None, 'sub': c', 'x', 'n', 'y', 'a', 'b', '2', '4', 'z, '(MO)(MX){MX(HX)CO}\u2003\u2003'}{'br': None, 'sub': n', 'y', 'a', 'b', '2', '4', 'z, '(MX){MX(HX)CO}\u2003\u2003'}wherein M represents at least one of zinc, tin, indium and gallium; X represents at least one of a hydroxyl group, alkoxy group, halogen, nitrate, acetate ion, sulfate ion, phosphate ion, oxalate ion, perchlorate ion, chlorate ion, chlorine dioxide and tetrafluoroborate; HX is a molecule formed by hydrogen combined with at least one of a hydroxyl group, alkoxy group, halogen, nitrate, acetate ion, sulfate ion, phosphate ion, oxalate ion, perchlorate ion, chlorate ion, chlorine dioxide and tetrafluoroborate; “a” represents a value obtained from subtracting 2 from M's atomic value; “b” is an integral number from 1 to 4; “n” is an integral number equal to M's atomic value; ...
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