ЗАЩИТНЫЙ ЭЛЕМЕНТ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение относится к защитному элементу для защищенной от подделки бумаги, банкнот, удостоверений личности или иных аналогичных документов, к защищенной от подделки бумаге и ценному документу с таким защитным элементом, а также способу их изготовления. На основу осаждением из паровой фазы напыляют многокомпонентный испаряемый материал, переводимый в паровую фазу с помощью электронного луча или нагрева сопротивлением. Пары испаряемого материала осаждают на основе, образуя на ней покрытие, окрашенное в цвет благородного или драгоценного металла. Состав покрытия определяют посредством измерения в отраженном свете и при необходимости корректируют возможные отклонения состава покрытия от заданного значения путем изменения мощности, расходуемой на нагрев испаряемого материала, и/или энергии электронного луча. 5 н. и 29 з.п. ф-лы, 3 ил.

ПОДШИПНИК СКОЛЬЖЕНИЯ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

... 1. Подшипник скольжения, содержащий несущую подложку и по крайней мере один металлический слой скольжения, нанесенный электронно-лучевым напылением, отличающийся тем, что поверхность слоя скольжения имеет закругленные выступы и впадины, причем выступы по отношению к горизонтальной плоскости занимают 30-50%, всей поверхности подшипника, при этом плоскость лежит на высоте, на которой сумма полученных в вертикальном сечении долей поверхности выступов равна сумме соответствующей доли поверхности впадин, и круглые выступы в виде сверху имеют диаметр 3-8 мкм, причем это значение при некруглых в виде сверху выступах и впадинах относится к максимальному диаметру и при этом поверхность имеет шероховатость Rz=3-7 мкм. 2. Подшипник по п.1, отличающийся тем, что несущая подложка состоит из комбинированного материала, который имеет стальную спинку и литой агломерированный или платированный подшипниковый сплав. 3. Подшипник по п.1 или 2, отличающийся тем, что слой скольжения состоит из медно-алюминиевого ...

СПОСОБ НАНЕСЕНИЯ ВАКУУМНЫХ ПОКРЫТИЙ В ОТВЕРСТИЯХ

Изобретение относится к области нанесения покрытий в вакууме, а точнее к нанесению покрытий способом электронно-лучевого нагрева испаряемого материала с одновременным его осаждением на внутренних поверхностях деталей сложной формы. Электронный пучок направляют перпендикулярно к поверхности массивного испарителя, расположенного горизонтально, непосредственно через покрываемые отверстия. Детали с покрываемыми отверстиями располагают на поверхности испарителя, обращенной к электронно-лучевой пушке. Оси отверстий ориентируют перпендикулярно этой поверхности. Отверстия закрываются с двух сторон масками. Маска, прилегающая к испарителю, имеет соосные отверстия, которые обеспечивают поступление паров на покрываемые поверхности. Маска, закрывающая деталь со стороны электронного пучка, выполняет функцию диафрагмы и ограничивает выход паров наружу из напыляемого объема. Для этого отверстия в ней сделаны минимально необходимыми для прохода через них сфокусированного электронного пучка. Технология ...

УСТАНОВКА ДЛЯ НАНЕСЕНИЯ ПОКРЫТИЙ В ВАКУУМЕ

Изобретение относится к установке для нанесения покрытий в вакууме на рулонные материалы и может быть использовано в различных областях, например, при производстве электронных компонентов, магнитных носителей записывающих устройств, декоративных покрытий. Установка включает камеру напыления, камеру пушек, систему откачки воздуха, систему газонатекания, систему охлаждения, пневмосистему, систему электропитания и управления, устройство перемещения. Устройство перемещения выполнено с возможностью стыковки- расстыковки с камерой напыления. На устройстве перемещения расположены система подъема-опускания рулона обрабатываемого материала, а также система перемотки с механизмами намотки и размотки, охлаждаемыми и неохлаждаемыми роликами. Камера напыления оснащена, по меньшей мере, одним испарителем, защитными экранами, механизмами подачи испаряемого материала в виде слитка и в виде проволоки. При этом в непосредственной близости от испарителя и в камере пушек установлена система электромагнитного ...

ЭЛЕКТРОННО-ЛУЧЕВАЯ УСТАНОВКА

Изобретение относится к приборам для электронно-лучевой обработки объектов и может использоваться для обработки изделий электронным лучом как при вертикальном, так и при горизонтальном положении рабочей камеры и лучевого тракта, в том числе в условиях низкого вакуума в рабочей камере. Техническим результатом является стабилизация положения и размеров пучка в переходных режимах. В установке система транспортировки электронного пучка выполнена в виде секции, установленной с возможностью поступательно-вращательного перемещения относительно продольной оси вакуумного корпуса, в котором размещена триодная электронная пушка, на торцевом фланце секции транспортировки электронного пучка закреплен анод электронной пушки и в нее введены датчики контроля тока и положения пучка, а катодный блок пушки смонтирован с возможностью поворота на 90o относительно продольной оси вакуумного корпуса. Полюсные наконечники магнитной линзы, установленной на выходе вакуумного корпуса, совмещают функции системы дифференциальной ...

МАЛОГАБАРИТНАЯ ЭЛЕКТРОННО-ЛУЧЕВАЯ УСТАНОВКА ДЛЯ ПОЛУЧЕНИЯ ТОЛCТОСТЕННЫХ ОДИНОЧНЫХ КОРОНОК ИЗ ТИТАНА

Малогабаритная электронно-лучевая установка для получения толстостенных одиночных коронок из титана, содержащая рабочую камеру, планетарный узел напыления и вакуумную систему, отличающаяся тем, что электронно-лучевая пушка расположена в виде отдельной вакуумной камеры с собственной вакуумной системой.

ЭЛЕКТРОДУГОВОЙ ИСПАРИТЕЛЬ

Электродуговой испаритель металлов и сплавов относится к области техники вакуумных электродуговых испарителей. В электродуговом испарителе создается неоднородное осесимметричное магнитное поле, имеющее по крайней мере два максимума, один из которых находится на рабочей поверхности катода, а другой - в плоскости выходного отверстия анода, а в области минимумов поля между анодом и катодом расположены промежуточные электроды, перекрывающие все линии прямого луча от рабочей поверхности катода к выходному отверстию анода, но не пересекающие силовые линии магнитного поля, проходящие через рабочую поверхность катода и выходное отверстие анода. 1 ил.

УСТАНОВКА ДЛЯ ЭЛЕКТРОННО-ЛУЧЕВОГО НАНЕСЕНИЯ ПОКРЫТИЙ

Изобретение касается вакуумной металлургии и может быть использовано при нанесении покрытий на изделия со сложным профилем. Установка содержит технологическую камеру, в которой расположены тигли и электронные пушки, форкамеры для загрузки-разгрузки кассет с изделиями, которые покрываются. Кассета для покрываемых изделий состоит из нижней неподвижной конической шестерни, вертикальной опоры, вала, верхней подвижной конической шестерни и конических шестерен для закрепления на них покрываемых изделий. Нижняя коническая шестерня установлена на вертикальной опоре, внутри которой размещен с возможностью вращения и зацепления с верхней подвижной конической шестерней вал. Между подвижной и неподвижной коническими шестернями установлены конические шестерни для закрепления на них покрываемых изделий. Устройство позволяет получать защитные покрытия почти всех типов, а также металлические, металлокерамические, силицидные покрытия градиентного и микрослойного типов. 4 з.п. ф-лы, 5 ил.

СПОСОБ ФОРМИРОВАНИЯ ПОВЕРХНОСТНЫХ СПЛАВОВ

Изобретение относится к методам модификации поверхностных слоев материалов, в частности к способам формирования поверхностных сплавов с помощью концентрированных потоков энергии (КВЭ). Сущность изобретения: в испарении мишени с помощью импульсного КПЭ и одновременном воздействии этого же потока на подложку, на которой формируется сплав. При этом мишень размещают между источником КПЭ и подложкой, а в качестве концентрированного потока энергии используют импульсный электронный пучок, транспортируемый в ведущем магнитном поле с максимальной энергией электронов 10 - 100 кэВ и током I, причем I > Iп, где Iп - значение тока Пирса в области между мишенью и подложкой. 3 ил.

СВЧ плазменный реактор

Изобретение относится к плазмохимии и плазменной технике, в частности к СВЧ плазменным реакторам, и может быть использовано при обработке поверхностей образцов, осаждения на них покрытий, выращивания пленок и кристаллов, а также найти применение в других областях техники. Технический результат - повышение мощности и производительности СВЧ плазменного реактора за счет упрощения его системы принудительного охлаждения. СВЧ плазменный реактор включает камеру, заполненную газом, СВЧ объемный резонатор для преобразования этого газа в плазму, электрод, имеющий две противоположные поверхности и размещенный внутри этого резонатора, средства ввода СВЧ энергии в резонатор, формирующие поток СВЧ энергии, направленный на ближайшую к СВЧ вводу одну из противоположных поверхностей электрода, обтекающий его и сходящийся у другой противоположной поверхности электрода, при этом электрод и СВЧ объемный резонатор выполнены создающими абсолютный максимум СВЧ поля и плазму у поверхности объемного резонатора, ...

Способ нанесения покрытия на лопатки газотурбинного двигателя

Изобретение относится к области нанесения покрытий в вакууме электронно-лучевым способом, конкретно к контролю качества и скорости нанесения покрытий на изделия со сложным профилем, а именно на лопатки газотурбинного двигателя (ГТД). Способ включает обеспечение заданного температурного поля на поверхности лопаток ГТД посредством программатора, для настройки программы которого в вакуумную камеру напыления помещают контрольную кассету с лопатками ГТД, у замка и пера каждой из которых расположены контрольные термопары, и проводят нагрев упомянутых лопаток ГТД в вакуумной камере путем сканирования электронного луча электронно-лучевой пушки по поверхности лопаток ГТД. После подачи в вакуумную камеру напыления материала для нанесения покрытия осуществляют настройку программы программатора. Сканирование, проводимое при нагреве упомянутых лопаток, размещенных в контрольной кассете, осуществляют с изменением режима сканирования электронного луча по поверхности лопаток ГТД до достижения температур ...

ЭЛЕМЕНТ ТУРБИНЫ С ТЕПЛОЗАЩИТНЫМ ПОКРЫТИЕМ

... 1. Элемент турбины, отличающийся тем, что он содержит подложку, образованную из керамического материала, выбранного из группы, состоящей из монолитного керамического материала и композиционного керамического материала, и теплозащитное покрытие, связанное с указанной подложкой. 2. Элемент турбины по п.1, отличающийся тем, что указанный керамический материал выбран из группы, состоящей из нитрида кремния и самоупрочненного нитрида кремния. 3. Элемент турбины по п.1, отличающийся тем, что указанный керамический материал выбран из группы, состоящей из композиционного материала на основе карбидокремниевого волокна и карбидокремниевой матрицы и композиционного материала на основе углеродного волокна и карбонизированной матрицы. 4. Элемент турбины по п.1, отличающийся тем, что указанное теплозащитное покрытие содержит по меньшей мере 15 мол.% по меньшей мере одного полуторного оксида лантанида, а остальное составляет первый оксид, выбранный из группы, состоящей из диоксида циркония, оксида церия ...

ПРОСВЕТЛЯЮЩЕЕ ПОКРЫТИЕ ДЛЯ ЛИНЗ, ИМЕЮЩЕЕ МАЛЫЕ ВНУТРЕННИЕ НАПРЯЖЕНИЯ И УЛЬТРАНИЗКУЮ ОСТАТОЧНУЮ ОТРАЖАЮЩУЮ СПОСОБНОСТЬ

... 1. Композиция для изготовления просветляющего покрытия с высоким коэффициентом преломления на оптических линзах, состоящая из смеси оксидов церия и титана, отличающаяся тем, что доля оксида церия меньше чем приблизительно 25% общей массы композиции. 2. Композиция для изготовления просветляющего покрытия с низким коэффициентом преломления на оптических линзах, состоящая из смеси оксидов кремния и алюминия, отличающаяся тем, что доля оксида алюминия меньше чем приблизительно 10% общей массы композиции. 3. Способ изготовления оптических линз с просветляющим покрытием, состоящий из следующих стадий: подготовка одной или более оптических линз и одной контрольной оптической линзы; размещение этих оптических линз и одной контрольной оптической линзы на одной и той же поверхности напыления в камере напыления в вакууме, снабженной взаимодействующим с указанной контрольной оптической линзой устройством непрерывного оптического контроля; оборудование указанной камеры по меньшей мере одним источником ...

МАТЕРИАЛ БАКТЕРИЦИДНОГО ПОКРЫТИЯ

Изобретение относится к области медицинской техники, в частности к материалам для травматологии и ортопедии, и предназначено для изготовления медицинских имплантатов остеосинтеза. Бактерицидное покрытие для медицинских изделий состоит из конденсатов, образованных при ионной бомбардировке в процессе вакуумного электродугового испарения металлов в присутствии реагирующего газа - азота, на основе нитрида титана, и дополнительно содержит в своем составе нитрид гафния при следующем соотношении элементов, мас.%: Ti - 17-24, Hf - 70-80 и N - 3-6. Использование изобретения позволяет получить покрытие для медицинских изделий долговременного контакта с тканями живого организма, с повышенной твердостью и бактериостатическими свойствами, что препятствует размножению патогенных микроорганизмов вблизи имплантата. 2 табл., 3 пр.

ВАКУУМНОЕ ОБРАБАТЫВАЮЩЕЕ УСТРОЙСТВО

... 1. Вакуумное обрабатывающее устройство для облучения материала напыления, получаемого паровым осаждением, содержащегося в источнике-испарителе, электронным пучком из электронной пушки Пирса и образования осажденного слоя на обрабатываемой подложке, расположенной напротив источника-испарителя, отличающееся тем, что магнитное устройство для создания магнитного поля, по существу, перпендикулярного направлению падения электронного пучка и практически параллельного поверхности излучения электронного пучка источника-испарителя, обеспечено снаружи вакуумной камеры, с задней стороны поверхности излучения электронного пучка для отклонения и направления электронного пучка к точке испарения источника-испарителя. ! 2. Устройство по п.1, отличающееся тем, что источник-испаритель представляет собой кольцевой нагреватель. ! 3. Устройство по п.1, отличающееся тем, что испаряемый и осаждаемый материал представляет собой металл, металлический оксид или изоляционный материал. ! 4. Устройство по п.3, отличающееся ...

ФОКУСИРОВАННОЕ ОСАЖДЕНИЕ ПАРА

Изобретения относятся к области металлургии, в частности к способу и оборудованию электронно-лучевого испарения и осаждения материалов. Процесс испарения и процесс осаждения проводят в двух различных камерах, соединенных между собой отверстием. В камерах поддерживают различное давление. Вокруг отверстия создают кольцевую сверхзвуковую струю газа, поддерживающую перепад давлений между камерами и позволяющую потоку пара проходить через отверстие из одной камеры в другую. Процесс испарения проводят при давлении от 10-4 до 10-1 Па. Процесс осаждения проводят при давлении от 10-1 Па до атмосферного. Осаждение производится из струи газа, которая захватывает прошедший в отверстие пар, перемешивает его компоненты и фокусирует. Также предлагается оборудование для осуществления способа. Технический результат состоит в повышении коэффициента использования материала и получении однородных по химическому составу конденсатов при испарении из нескольких источников, содержащих различные материалы без снижения ...

СПОСОБ ПОЛУЧЕНИЯ БИНАРНОГО ХИМИЧЕСКОГО СОЕДИНЕНИЯ НА ТВЕРДОЙ ПОВЕРХНОСТИ

Изобретение относится к области физической химии, изучающей процессы, обусловленные действием излучения (с частотами видимого спектра и близким к ним) на вещество и может быть использовано при получении различных новых соединений на твердой поверхности, для повышения производительности существующих методов получения и т. д. Сущность изобретения состоит в том, что твердую поверхность, размещенную в герметичном объеме, заполненном газовой фазой участвующих в реакции компонентов, облучают потоком фотонов с частотой, соответствующей спектральной линии по крайней мере одного из компонентов. При этом энергия фотонов должна быть не менее энергии активации реакции образования бинарного химического соединения. Плотность мощности излучения определяется из математического выражения.

СПОСОБ НАНЕСЕНИЯ ВАКУУМНЫХ МЕТАЛЛИЗИРОВАННЫХ ПОКРЫТИЙ НА ДИЭЛЕКТРИЧЕСКИЕ ПОДЛОЖКИ

Способ напыления вакуумного металлизированного покрытия на диэлектрические подложки включает бомбардировку подложки положительными ионами газового разряда с одновременным напылением покрытия путем осаждения металла, испаренного в рабочей камере вакуумным методом. Бомбардировка подложки положительными ионами газового разряда чередуется с процессом облучения подложки ультрафиолетовым излучением и потоком электронов.

УСТРОЙСТВО ДЛЯ ПЛАЗМОХИМИЧЕСКОГО НАНЕСЕНИЯ ПОКРЫТИЯ

... 1. Устройство для плазмохимического нанесения покрытия, содержащее вакуумную камеру с расположенными в ней твердым веществом и установочным элементом для обрабатываемого изделия, источник постоянного магнитного поля, систему напуска рабочего газа и электронную пушку, установленную с возможностью формирования электронного пучка для испарения твердого вещества, отличающееся тем, что оно снабжено вакуумными сопротивлениями, а вакуумная камера выполнена с вакуумным отсеком, разделенным с упомянутой камерой упомянутыми сопротивлениями, при этом электронная пушка выполнена с системой катодов, обеспечивающих формирование не менее двух электронных пучков, и установлена в вакуумном отсеке с возможностью прохождения через вакуумные сопротивления по меньшей мере одного электронного пучка в зону расположения твердого испаряемого тела для поддержания процесса его испарения и по меньшей мере одного из числа остальных электронных пучков в зону обрабатываемого изделия для поддержания в ней процесса плазмообразования ...

УСТАНОВКА ДЛЯ ЭЛЕКТРОННО-ЛУЧЕВОГО НАНЕСЕНИЯ ПОКРЫТИЙ

... 1. Установка для электронно-лучевого нанесения покрытий, которая состоит из технологической камеры, в которой расположены тигли и электронные пушки, форкамеры для загрузки-разгрузки кассет с изделиями, которые покрываются, отличающаяся тем, что кассета с изделиями, которые покрываются, нижней неподвижной конической шестерней устанавливается на расположенной на нижней крышке технологической камеры вертикальной опоре, в середине которой вращается вал, который входит в зацепления с верхней подвижной конической шестерней кассеты. 2. Установка по п.1, отличающаяся тем, что между подвижной и неподвижной коническими шестернями установлены конические шестерни с закрепленными на них изделиями. 3. Установка по п.1, отличающаяся тем, что при вращении верхней подвижной конической шестерни, конические шестерни с закрепленными на них изделиями катятся по нижней неподвижной конической шестерне, одновременно вращаясь вокруг собственной продольной оси. 4. Установка по п.1, отличающаяся тем, что оснащена ...

Способ контроля наименьшего диаметра пятна электронного луча

Устройство для ионного осаждения пленок на цилиндрические поверхности

Vapour-deposited coating using high deposition rates - providing a continuous coating of steel strip with aluminium

The process is for coating a substrate by evapn. of a material in which, during deposition, the min. technical distance is used between the substrate and the material but, when the process is interrupted, the distance is increased so a shielding screen can be inserted between the material and the substrate. The substrate is pref. fed at an angle above the evapn. crucible and the pref. appts. consists of an electron gun with magnetic guide and deflector units for the beam, used with a crucible mounted on rollers running on sloping rails so the crucible can be moved down the slope when it is necessary to insert the screen. Used for the vapour deposition, esp. of Al on moving steel strip, e.g. 400 mm wide. By using the min. distance between substrate and crucible, deposition rates are increased 50-75% and the variation in coating thickness reduced to 5-10% of the average coating thickness.

Verfahren zur homogenen Schichtabscheidung mittels Bogenentladung

Lasergezuendeter Vakuum-Bogenentladungs-verdampfer

LUNG

Vorrichtung zum Elektronenstrahlverdampfen

Die Erfindung betrifft eine Vorrichtung zum Elektronenstrahlverdampfen, umfassend eine Vakuumarbeitskammer (2), einen Axialstrahler (6) zum Erzeugen eines Elektronenstrahls (7), mittels dem ein zu verdampfendes Material (5) erhitzbar ist, und eine zwischen dem Material (5) und einem zu beschichtenden Substrat (3) angeordnete Blende (9), welche mindestens eine Dampfapertur (10) aufweist, durch die Materialdampf zum Substrat (3) gelangt, wobei die Blende (9) ein Magnetsystem (14) umfasst, mittels dem der Elektronenstrahl (7) durch die Dampfapertur (10) auf das zu verdampfende Material (5) ablenkbar ist.

Method for coating substrates by vacuum deposition, comprises directing an electron beam on deposited layer material in a heating zone and coating the heating zone by a suitable beam deflection so that the layer material is heated

The method comprises directing an electron beam (7) on deposited layer material in a heating zone (21) during coating, and coating the heating zone by a suitable beam deflection in section-wise manner so that the layer material is heated, where the heating zone lies within the coating zone (19), i.e. the zone of a substrate (13) in which the vaporous material is precipitated, and/or a neighboring zone are directly connected to the heating zone within the process opening (17). The coating is carried out on a moving substrate. The method comprises directing an electron beam (7) on deposited layer material in a heating zone (21) during coating, and coating the heating zone by a suitable beam deflection in section-wise manner so that the layer material is heated, where the heating zone lies within the coating zone (19), i.e. the zone of a substrate (13) in which the vaporous material is precipitated, and/or a neighboring zone are directly connected to the heating zone within the process opening ...

Aufdampfmaterial zur Herstellung hochbrechender optischer Schichten

Verfahren zum Betreiben eines Vakuum-Bogenentladungsverdampfers

Verfahren zur Herstellung von Mehrfachschichten mittels Vakuum-Lichtbogenverdampfer

SUPERFEINES WOLFRAMTEILCHEN UND VERFAHREN ZU DESSEN HERSTELLUNG

Lagerschale

Niedervoltbogenverdampfer mit Nachfütterungseinrichtung und Verfahren zu dessen Verwendung

Verfahren und Vorrichtung zur langzeitstabilen Beschichtung von Substraten mittels Elektronenstrahlverdampfung

Verfahren zur langzeitstabilen Beschichtung von Substraten (1), welche durch eine Beschichtungskammer bewegt und dabei beschichtet werden, indem in einem Tiegel (15) angeordnetes Verdampfungsmaterial (3) mittels eines Elektronenstrahls (18) verdampft und auf dem Substrat (1) abgeschieden wird, wobei der Elektronenstrahl (18) auf der Oberfläche des Verdampfungsmaterials (3) eine punktförmige oder kleinflächige Quelle des auf dem Substrat (1) abzuscheidenden Dampfes, nachfolgend als Dampfquelle (6) bezeichnet, erzeugt und der Tiegel (15) mit dem Verdampfungsmaterial (3) relativ zur Dampfquelle (6) derart in einer Ebene bewegt wird, dass die Oberfläche des Verdampfungsmaterials (3) dem Substrat (1) während dessen Beschichtung gegenüber liegt, dadurch gekennzeichnet, dass die Tiegelbewegung sich aus zwei Drehbewegungen des Tiegels (15) um zwei Drehachsen (10) zusammensetzt und dass die Position der Dampfquelle (6) relativ zur Geometrie der Beschichtungskammer stationär bleibt.

Improvements in apparatus for heating by electronic bombardments

... 714,612. Cathode ray tubes. SUDDEUTSCHE LABORATORIEN GES. Dec. 12, 1951 [April 13, 1951], No. 29130/51. Class 39(1) [Also in Group XI] An electron beam 32 from ar electron emitter 15 in an evacuated casing 11 is focused tc impmge on small objects 75 ir recesses 66 in a slidable carrier rod 67, extending through sealing means 70, 73 in a wall of the casing 11, whereby the objects are brought in turn tc the focus position, where they are melted and on immediate cooling solidify into a spherical or rounded form. Thus small pieces of aluminium oxide of about 1 mm. diameter may be brought in turn under the beam by sliding the rod 67 in a tubular housing 53, and, aftei heating, the rod is rotated and the particles fall into a cooling oil bath 51. When the beam is focused on a larger object, only a desired part of it may be melted; but if the intensity of the beam is increased, the object may explode into small particles, which are melted, formed into spheres and collected in the vacuum chamber ...

ELECTRON BEAM VAPORISER DEFLECTION SYSTEM

Apparatus and method for coating substrates

Apparatus 10 for treating a substrate, comprising: a vacuum chamber 12; a substrate carrier 14 adapted to carry a substrate 16 to be treated; a source material holder (22, Fig 2) for holding a source material (34, Fig 6) with which the substrate 16 is to be treated; and vaporising or sputtering means 20 for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24, Fig 2) for relatively moving the source material (34) towards the substrate carrier.

Process for production of ultrathin protective overcoats

VACUUM DEPOSITION OF VAPOURIZED METALS OR METAL COMPOUNDS

... 1334599 Program controlled vapour deposition ROBERT BOSCH GmbH 19 April 1971 [30 Jan 1970] 20227/71 Heading C7F In a process for vacuum deposition of metals or metal compounds on substrates in which the vapour is produced by electron beam heating, the vapour density of the metal or compound is varied by a varying programmed control input superimposed on a basic input to vary the energy or intensity of the electron beam so as to achieve a specific rate of growth or layer structure of the deposit. As shown, Fig.1, a vacuum vessel 10 encloses a substrate 13, a crucible 11 containing a metal 12, such as palladium, to be evaporated, an electron gun 16 and a probe 22 connected to current measuring instrument 24. Basic input to the gun is supplied from high-voltage D.C. unit 18 by way of coupling element 19. Variable input is supplied from source of potential 21 through a programme controller 20 to the coupling element 19. The input is varied to compensate for undesired variations in vapour density ...

Ion cleaning and deposition apparatus

An ion cleaning and deposition apparatus comprises a vacuum chamber 10 wherein electrons emitted from a heated cathode 18, e.g. a circular tungsten wire, are magnetically focused into an intense beam, preferably by a water-cooled tubular magnet 16, against the surface of a charge 30 of coating material, e.g. W, Mo or quartz connected as an anode whereby the surface is heated and vaporized and the vapours are ionised by the electron bombardment, and a substrate mounted upon an electrode support 42 positioned in a line extending from the charge through the cathode is simultaneously cleaned and coated by the ions accelerated there against from the ion source of the charge. The charge may be contained in a water-cooled copper anode crucible 26 adjustably positionable to the focal point of the electron flow, e.g. with a rack and pinion assembly 38. Alternatively, the apparatus may be inverted Fig. 2 (not shown) and a rod-shaped charge (52) continually fed into the intense ...

Apparatus for applying coatings

An apparatus for applying ceramic coatings using an electron beam - physical vapor deposition apparatus includes means 26, 28 for introducing the anionic constitutent of the ceramic into a coating chamber and means such as chamber 56 for confining the anionic constituent about the component to be coated during the coating process. The animic constituent may be oxgyen or nitrogen and the ceramic coating could be for example titanium nitride or zirconium oxide.

Method of melting and/or vaporizing material by electron bombardment

In the electron beam heating of material for vapour deposition, the cathode current is periodically stopped or reduced to destroy the magnetic field generated around the cathode. An annular cathode of lanthanum boride may be used.

MOLTEN METAL FEED TROUGH

VAPOUR DEPOSITION APPARATUS

... 1500701 Coating by vapour deposition and sputtering UNITED KINGDOM ATOMIC ENERGY AUTHORITY 10 Jan 1975 [24 Jan 1974] 03315/74 Heading C7F Substrates 21 in a gas-containing chamber 11, within a second chamber 10 are coated by sputtering or evaporation from a source 20, the gas in the chamber 11 being heated (200‹ to 600‹C) by heating the chamber walls by e.g. an electron gun 12 or electric resistance heating Fig. 2 (not shown). The material is evaporated or sputtered by a stream of charged particles (ions or electrodes). The gas may be hydrogen, nitrogen, oxygen, air, helium or argon. When coating by sputtering, the cathode may be a truncated sphere or hollow cylinder having the material to be sputtered in its inner surface. The substrates may be heated to e.g. 900‹C. The chamber may be outgassed in a reducing atmosphere.

HYBRID HEAT-INSULATING LAYER AND PROCEDURE FOR THEIR PRODUCTION

MULTILEVEL METALIZED GROUP ON POLYMER FILM PRODUCT AND PROCEDURE

SOURCE OF MAGNET MIRROR PLASMA

SLIDING BEARING AND PROCEDURE FOR ITS PRODUCTION

GLEITLAGERSCHALE AND PROCEDURE FOR YOUR PRODUCTION

GLEITLAGERSCHALE UND VERFAHREN ZU IHRER HERSTELLUNG

GLEITLAGER UND VERFAHREN ZU SEINER HERSTELLUNG

MECHANISM FOR PLASMA-SUPPORTED ELECTRON-BEAM HIGH RATE VAPORIZING

DEVICE AND PROCEDURE FOR LAYING ON DUENNSCHICHTUEBERZUEGEN IN THE VACUUM.

Lichtbogenverdampfungs-Beschichtungsquelle

The invention relates to an arc evaporation coating source (1), comprising: a target (2) made of a coating material to be evaporated, a ferromagnetic yoke (3) for influencing the evaporation of the coating material to be evaporated and at least one permanently magnetic body (4) for influencing the evaporation of the coating material to be evaporated. The ferromagnetic yoke (3) is arranged in contact with the target (2). The permanently magnetic body (4) is fastened to the target (2) by means of the ferromagnetic yoke (3).

PROCEDURE FOR THE PLASMA TREATMENT OF WORKPIECES

MONOCLONAL ANTIBODY AGAINST FIBROBLAST WACHSTUMSFAKTOR-8

Procedure and device for the material bringing in into crucibles used with vacuum precipitation systems

MECHANISM TO THE VACUUM COATING OF SLIDING BEARINGS

Cellular microarrays for screening differentiation factors

Provided is a microarray platform for the culture of cells atop combinatorial matrix mixtures; enabling the study of differentiation in response to a multitude of microenvironments in parallel.

Thermal barrier coatings and electron-beam, physical vapor deposition for makingsame

VAPOR SOURCE HEATED BY AN ELECTRON BEAM

APPARATUS AND METHOD FOR COATING SUBSTRATES

Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

THERMAL BARRIER PLACED DIRECTLY ON SINGLE-CRYSTAL SUPERALLOYS

L'invention concerne le domaine des superalliages revêtus d'une barrière thermique. Sur un superalliage (10) monocristallin de composition en masse de 3,5 à 7,5% Cr, 0 à 1,5% Mo, 1,5 à 5,5% Re, 2,5 à 5,5% Ru, 3,5 à 8,5%W,5 à 6,5% Al, 0 à 2,5% Ti,4,5 à 9% Ta,0,08 à 0,12% Hf, 0,08 à 0,12% Si, le complément à 100% étant constitué par Ni et les impuretés éventuelles, on dépose directement une zircone (20) stabilisée avec au moins un oxyde d'un élément choisi dans le groupe constitué des terres rares, ou avec une combinaison d'un oxyde de tantale et d'au moins un oxyde de terre rare, ou avec une combinaison d'un oxyde de niobium et d'au moins un oxyde de terre rare.

Verfahren zur Verdampfung im Vakuum.

Verfahren zum Verdampfen von schwer verdampfbaren elektrisch isolierenden Stoffen mit Elektronenstrahlen

Vorrichtung, in welcher Elektronen auf physikalisch oder chemisch veränderliche Stoffe zur Einwirkung kommen.

Vorrichtung zum Bohren mit Elektronen.

Vorrichtung zur Einwirkung von Elektronenenergie auf kleine Körper.

Aufdampfeinrichtung.

Scharnier für einen zweiteiligen Behälter

Vorrichtung zum Verdampfen von hochschmelzenden Materialien, insbesondere Quarz

Verfahren zum Aufdampfen von Metallen oder Metallverbindungen auf einen Träger mit Hilfe einer Elektronenstrahlheizung, sowie Bedampfungseinrichtung zur Durchführung des Verfahrens

Verfahren und Vorrichtung zum Ueberziehen eines Substrats mit einer Vielzahl von Schichten

Verfahren zum Überziehen eines Substrates mit Kunststoffen und Anwendung des Verfahrens

Einrichtung für die Verdampfung von Substanzen im Hochvakuum

Verfahren zur Herstellung von Einkristallen, insbesondere aus Halbleitermaterial

Anordnung zur elektronischen Aufdampfung von Substanzen auf isolierende Unterlagen

Verfahren zur Herstellung einer elektronischen Vorrichtung

Verdampfungseinrichtung für die Herstellung dünner Oberflächenschichten

Verfahren zur Zufuhr von Teilchenmaterial in einen sich um eine etwa horizontale Achse drehenden zylindrischen Verdampfungstiegel einer Vakuum-Bedampfungsanlage

Mindestens teilweise beschichteter Gegenstand und Verfahren zu dessen Herstellung

Verfahren und Vorrichtung zum Beschichten eines Trägerkörpers unter Vakuum mit Dampfniederschlag

Vorrichtung zur Verdampfung von Stoffen im Vakuum

Source de métallisation sous vide

Procédé pour déposer sur un support une couche mince d'un électrolyte solide céramique pour pile à combustible

Vorderflächenspiegel und Verfahren zu seiner Herstellung

Procédé pour revêtir un corps en matière polymérique d'une matière de revêtement

Vorrichtung zum gleichmässigen Verdampfen und Auftragen von hochschmelzenden Materialien im Hochvakuum sowie Verfahren zum Betrieb derselben

Apparat zum Auftragen eines metallenen Überzuges auf ein Substrat

VORRICHTUNG ZUM VAKUUMAUFDAMPFEN.

ELECTRON-BEAM EVAPORATOR.

METHOD AND APPARATUS FOR VAPOR DEPOSITION USING ELECTRON BEAM MODULE AND A SCREEN.

PROCEDURE FOR EVAPORATING MATERIAL IN A VACUUM EVAPORATING PLANT.

Transparent, weather-resistant barrier film having an improved barrier effect and scratch resistance properties

The invention relates to the production of a transparent, weather-resistant barrier film by lamination, extrusion lamination (adhesive lamination, melt lamination or hotmelt lamination) or extrusion coating. The film can also contain a scratch-resistant coating. For this purpose, two or more transparent film composites, which consist in each case of two externally disposed polyolefin or polyester layers which are in each case inorganically coated and glued to the inorganic layer on the inside, are connected to each other. Said composite is laminated with a weather-resistant, transparent film (e.g. PMMA or PMMA polyolefin coextrudate or PMMA polyester coextrudate). The inorganic oxide layers have the property of a high optical transparency while having at the same time a good barrier effect against water vapour and oxygen while the PMMA layer exhibits weather resistance stability.

Glancing Angle Mill

A method and system for forming a planar cross-section view for an electron microscope. The method comprises directing an ion beam from an ion source toward a first surface of a sample to mill at least a portion of the sample; milling the first surface, using the ion beam, to expose a second surface in which the end of the second surface distal to the ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to the ion source; directing an electron beam from an electron source to the second surface; and forming an image of the second surface by detecting the interaction of the electron beam with the second surface. Embodiments also include planarzing the first surface of the sample prior to forming a cross-section. 1. A method of forming a planar cross-section view for an electron microscope , the method comprising:directing an ion beam from an ion source toward a first surface of a sample to mill at least a portion of the sample;milling the first surface, using the ion beam, to expose a second surface in which the end of the second surface distal to the ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to the ion source;directing an electron beam from an electron source to the second surface; andforming an image of the second surface by detecting the interaction of the electron beam with the second surface.2. The method of further comprising analyzing the image of the second surface to determine whether a feature of the second surface includes a defect.3. The method of in which the angle between the first particle beam and the first surface is equal to or less than ten degrees.4. The method of in which the angle between the first particle beam and the first surface is equal to or less than five degrees.5. The method of in which the angle between the first particle beam and the first surface is equal to or less than one degree.6. The method of in ...

Sample preparation method and apparatus

Provided is a sample preparation method, including: while displaying a SEM image of a first cross-section of a sample on a display screen, subjecting the first cross-section to etching processing by scanning and irradiation of a focused ion beam, thereby exposing a second cross-section; and while displaying a SEM image of another cross-section on the display screen, changing a scanning direction of the focused ion beam while performing the scanning and irradiation of the focused ion beam and subjecting the second cross-section to etching processing, thereby exposing a desired cross-section of the sample.

ION MILLING DEVICE AND ION MILLING PROCESSING METHOD

The sample is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam to repeat tilt and tilt/restoration of a processing target surface of the sample between a surface state in which the processing target surface of the sample faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface on the mask side, so that the processing target surface is irradiated with the ion beam at a low angle, and projections/recesses derived from a void or a dissimilar material are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis. 1. An ion milling device comprising:a swinging mechanism that shakes a sample table about a tilt axis, which is perpendicular or substantially perpendicular to an optical axis of an ion beam emitted from an ion beam source, to shake a processing target surface of a sample that is held on the sample table and is partially shielded from the ion beam by a mask, along a plane that is perpendicular to a plane defined by the optical axis of the ion beam and the tilt axis; anda tilt-oscillation mechanism that shakes the sample held on the sample table about an axis that is perpendicular to the plane defined by the optical axis of the ion beam and the tilt axis along the plane defined by the optical axis of the ion beam and the tilt axis, between a surface state in which the processing target surface of the sample faces the tilt axis direction and is along the optical axis direction of the ion beam and a surface state in which the processing target surface of the sample is tilted in the optical axis direction of the ion beam toward the ion beam source side ...

Low Energy Ion Beam Etch

A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O, greatly increases the etch rate. In one example, polyimide material etched using a Xe plasma FIB with a beam energy from 8 keV to 14 keV and Oas an etch-assisting gas, the increase in etch rate can approach 30x as compared to the default mill rate. 1. A method of chemically-enhanced ion beam milling of a work piece including a carbonaceous material , the method comprising:providing an oxygen-containing, etch-assisting gas at the surface of the work piece; anddirecting the ion beam toward the carbonaceous material to etch the carbonaceous material in the presence of the etch assisting gas, the ion beam having insufficient energy to form a passivation layer from a reaction between the oxygen-containing, etch-assisting gas, comprising the oxygen and the carbonaceous material.2. The method of in which directing the ion beam toward the carbonaceous material includes directing an ion beam having less than 16 keV.3. The method of in which directing the ion beam toward the carbonaceous material includes directing an ion beam having less than 10 keV.4. The method of in which directing the ion beam toward the carbonaceous material includes directing a beam of xenon ions.5. The method of in which directing the ion beam toward the carbonaceous material includes directing a beam of xenon ions having energy of less than 16 keV towards a polyimide material.6. The method of in which directing an oxygen-containing claim 5 , etch-assisting gas toward the work piece comprises directing Otoward the work piece.7. A method of chemically-enhanced ion beam milling of a substrate claim 5 , the method comprising:loading the substrate into an ion beam system;providing an etch-assisting gas toward the work piece, the etch-assisting gas comprising an oxidizing agent;directing ...

GLOW DISCHARGE MILLING APPARATUS AND GLOW DISCHARGE MILLING METHOD

A glow discharge milling apparatus milling a sample by using glow discharge includes a glow discharge tube in which in an atmosphere of mixed gas supplied through a pipe, a voltage is applied between an internal electrode and a sample placed opposite to the electrode so that glow discharge is generated; a reception part receiving a mixing ratio by which inert gas and oxygen gas are to be mixed with each other; a control part, in accordance with the mixing ratio received by the reception part, controlling the amounts of supply of the inert gas and the oxygen gas; and a supply unit mixing the inert gas and the oxygen gas with each other in accordance with the amounts of supply controlled by the control part and then supplying the mixed gas to said glow discharge tube through said pipe. 1. A glow discharge milling apparatus milling a sample by using glow discharge , comprising:a glow discharge tube in which in an atmosphere of mixed gas supplied through a pipe, a voltage is applied between an internal electrode and a sample placed opposite to the electrode so that glow discharge is generated;a reception part receiving a mixing ratio by which inert gas and oxygen gas are to be mixed with each other;a control part, in accordance with the mixing ratio received by the reception part, controlling the amounts of supply of the inert gas and the oxygen gas; anda supply unit mixing the inert gas and the oxygen gas with each other in accordance with the amounts of supply controlled by the control part and then supplying the mixed gas to said glow discharge tube through said pipe.2. The glow discharge milling apparatus according to claim 1 , further comprising:a detection part detecting an auto-bias voltage value associated with a voltage generated on a surface of the sample on which the voltage is applied;a storage part storing auto-bias voltage values and mixing ratios of the inert gas and the oxygen gas in correspondence to each other; anda retrieval part, on the basis of the ...

DEPOSITION SOURCE

A deposition source with uniform deposition characteristics includes a crucible in which a deposition material is disposed; a heat transfer member disposed on upper portions of the deposition material in the crucible; and an accommodation member for accommodating the heat transfer member and including a mesh plate. 1. A deposition source comprising:a crucible in which a deposition material is disposed;an accommodation member comprising a mesh plate and which is disposed adjacent the deposition material; anda heat transfer member disposed within the accommodation member and separated from an upper portion of the deposition material by the mesh plate.2. The deposition source of claim 1 , wherein:the accommodation member comprises a bottom portion disposed between the heat transfer member and the upper portion of the deposition material, and a side portion extending from the bottom portion and forming a side surface of the accommodation member,the bottom portion comprises the mesh plate, andthe side portion comprises another mesh plate.3. The deposition source of claim 2 , wherein:the accommodation member further comprises a top portion that is parallel to the bottom portion and is connected to the side portion such that the heat transfer member is disposed between the top and bottom portions, andthe top portion comprises a further mesh plate.4. The deposition source of claim 3 , wherein the top portion is connected to the side portion by welding.5. The deposition source of claim 2 , wherein:the accommodation member comprises a cover portion disposed on upper portions of the heat transfer member, andthe cover portion comprises a further mesh plate and is detachable from the side portion.6. The deposition source of claim 2 , further comprising supports disposed on the side portion and connected to the bottom portion.7. The deposition source of claim 1 , wherein the accommodation member has a shape formed to correspond to an inner circumferential surface of the crucible. ...

MULTI-SOURCE PLASMA FOCUSED ION BEAM SYSTEM

The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam. 1. A method of charged particle beam processing , comprising:providing an ion beam system having a first gas supply and a second gas supply, the first and second gas supplies being selectively connected to a plasma chamber of an ion source for producing ions of a first type or ions of a second type, respectively, the ion beam system including focusing optics for forming a beam of ions extracted from the plasma chamber;selectively causing a gas from the first gas supply to enter the plasma chamber; andprocessing a work piece using a beam of ions of the first type extracted from the plasma chamber;selecting causing a gas from the second gas supply to enter the plasma chamber;processing the work piece using a beam of ions of the second type extracted from the plasma chamber, in which the work piece is not removed from the vacuum chamber and the vacuum chamber is not exposed to atmosphere between processing a work piece using a beam of ions of a first type and processing a work piece using a beam of ions of a second type.2. The method of in which the ion source comprises an RF-excited claim 1 , impedance matched plasma chamber for receiving an ion species and extracting an ion beam from the chamber.3. The method of in which the impedance matched plasma chamber is coupled to impedance matching circuitry that is adjustable to vary an amount of power transferred to the plasma for a particular selected ion species.4. The method of ...

HARD LAMINAR COATING

It is provided a hard laminar coating consisting of a plurality of films including two kinds of films in the form of a first film and a second film having respective different compositions and alternately laminated on a surface of a base structure, wherein the first film is an oxide or an oxynitride of (TiB), while the second film is TiB. 1. A hard laminar coating consisting of a plurality of films including two kinds of films in the form of a first film and a second film having respective different compositions and alternately laminated on a surface of a base structure , wherein said first film is an oxide or an oxynitride of (TiB) , while said second film is TiB.2. The hard laminar coating according to claim 1 , wherein an atomic ratio a in said first film satisfies 0.02≧a≧0.7 claim 1 , and a thickness of said first film is no less than 0.1 μm and no more than 5.0 μm claim 1 , while a thickness of said second film is no less than 0.1 μm and no more than 5.0 μm claim 1 , said hard laminar coating having a total thickness of no less than 0.2 μm and no more than 10.0 μm.3. The hard laminar coating according to claim 1 , wherein said hard laminar coating consists of no less than 2 and no more than 100 layers claim 1 , which are laminated on each other. The present invention relates to a hard laminar coating including two kinds of films having respective different compositions and alternately laminated on a surface of a base structure, and more particularly to an improvement of properties of the hard laminar coating.Various hard laminar coatings including two kinds of films in the form of a first film and a second film having respective different compositions and alternately laminated on each other have been proposed, as a wear resistant hard laminar coating provided on a surface of a base structure of a tool of a high-speed tool steel or a cemented carbide. Patent Documents 1 and 2 disclose examples of such hard laminar coatings, wherein two kinds of films formed of ...

METHODS AND SYSTEMS OF MANUFACTURING A COATED STRUCTURE ON A SUBSTRATE

A method of manufacturing a coated structure on a substrate includes positioning a substrate in a vapor deposition chamber having a crucible with source material. The method includes evaporating the source material with electron beams from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer. The method includes ablating the coating layer with the electron beams to selectively remove portions of the coating layer leaving a circuit structure on the substrate. The evaporating and ablating are accomplished in situ within the vapor deposition chamber using the same irradiation source. 1. A method of manufacturing a coated structure on a substrate , the method comprising:positioning a substrate in a vapor deposition chamber, the vapor deposition chamber having a crucible with source material;evaporating the source material with an electron beam from an irradiation source, the evaporated source material being deposited on the substrate as a coating layer;ablating the coating layer with an electron beam from the irradiation source to selectively remove portions of the coating layer leaving a coated structure on the substrate.2. The method of claim 1 , wherein the evaporating and ablating are accomplished in situ within the vapor deposition chamber using the same irradiation source.3. The method of claim 1 , further comprising passing the electron beam through an electric field claim 1 , the electric field being used to direct the electron beam at the crucible and then at the coating layer.4. The method of claim 1 , further comprising:passing the electron beam through an electric field;using the electric field in a first operation to direct the electron beam at the crucible; andusing the electric field in a second operation to direct the electron beam at the coating layer.5. The method of claim 1 , further comprising:passing the electron beam from the irradiation source through an electric field;operating the electric ...

Plan View Sample Preparation

A method and apparatus for altering the orientation of a charged particle beam sample is presented. Embodiments of the method includes providing a first work piece on a sample stage having a sample stage plane, the first work piece including a lamella plane in a first orientation. A sample is milled from the first work piece using an ion beam so that the sample is substantially free from the first work piece. A probe is attached to the sample, the probe including a shaft having a shaft axis, the shaft axis oriented at a shaft angle in relation to the sample stage plane, the shaft angle being non-normal to the sample stage plane. The probe is rotated about the shaft axis through a rotational angle so that the lamella plane is in a second orientation. The sample is attached to or placed on the sample on either the first work piece, the first work piece being the work piece from which the sample was milled, or on a second work piece, the second work piece being a work piece from which the sample was not milled. The sample is thinned using the ion beam to form a lamella, the lamella being oriented in the lamella plane. 1. A method for creating a plan view TEM sample , comprising:providing a first work piece on a sample stage having a sample stage plane, the first work piece including a lamella plane being oriented in a first orientation;milling a sample from the first work piece using an ion beam so that the sample is substantially free from the first work piece;attaching a probe to the sample, the probe including a shaft having a shaft axis, the shaft axis oriented at a shaft angle in relation to the sample stage plane, the shaft angle being non-normal to the sample stage plane;rotating the probe about the shaft axis through a rotational angle, the rotation causing the sample to be rotated so that the lamella plane is oriented in a second orientation; the first work piece, the first work piece being the work piece from which the sample was milled; or', 'a second work ...

ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS

A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas. 1. A method comprising:loading, into a process chamber, a substrate on which a multilayered film is formed, the multilayered film including a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer;supplying a process gas into the process chamber, the process gas containing a fluorocarbon gas and a noble gas; and the noble gas contains a first gas having higher ionization energy than Ar gas, and', 'momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas., 'forming a plasma from the process gas in the process chamber, thereby causing the multilayered film to be etched; wherein'}2. The method according to claim 1 , the noble gas further containing a second gas; whereinthe supplying of the process gas includes controlling a ratio between the first gas and the second gas contained in the noble gas; andthe second gas contains at least one of Ar gas and a gas having lower ionization energy than Ar gas.3. A method comprising:loading, into a process chamber, a substrate on which a multilayered film is formed, the multilayered film including a silicon-containing insulating layer, an undercoat ...

METHODS AND APPARATUS FOR ELECTRON BEAM ETCHING PROCESS

Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions. 1. A method of etching a substrate , comprising:delivering a process gas to a process volume of a process chamber;applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume;generating a plasma comprising ions in the process volume;bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam;applying a negative DC power to the electrode;accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber; andetching the substrate with the accelerated ions.2. The method of claim 1 , wherein the RF power has a low frequency of about 2 MHz.3. The method of claim 1 , wherein the RF power has a high frequency of about greater than 60 MHz.4. The method of claim 1 , wherein accelerating the electrons emitted from the electrode comprises:generating a magnetic field in the process volume of the process chamber;5. The method of further comprising:altering a trajectory of the electrons in the process volume.6. The method of claim 1 , wherein applying the RF power to the electrode and applying the negative DC power to the electrode are performed sequentially.7. The method of claim 1 , ...

ION MILLING DEVICE

The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. 1. An ion milling device comprising:an ion source for irradiating a sample with an ion beam; anda sample stage disposed within a vacuum chamber for the sample to be irradiated with the ion beam,wherein a sample holder that holds the sample, and a mask that partially limits irradiation of the sample with the ion beam is provided, and the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.2. The ion milling device according to claim 1 ,wherein the first contact surface and the second contact surface are formed into a stepped shape.3. The ion milling device according to claim 1 ,wherein the first contact surface includes two surfaces that contact with different regions of the sample, and a passage opening through which the ion beam passes is provided between the two surfaces of the first contact surface.4. An ion milling sample table for an ion milling device that processes a sample by irradiating the sample with an ion beam emitted from an ion source claim 1 ,wherein a shield is arranged at a position that contacts with the sample ...

Crucible cover for coating with an electron beam source

A cover arrangement comprised of at least two pieces for covering a crucible within an electron beam source assembly. The cover includes a cover body and a cover insert to be separate from and carried by the cover body, when the cover body is raised and lowered. This arrangement also allows the cover insert to be lowered until it comes to rest on top of the crucible. Upon contact between the cover insert and the crucible, the cover insert can partially decouple from the cover body, allowing the cover body to travel down slightly further, allowing it to come into contact with the water-cooled body that surrounds the crucible, while insuring that the crucible insert is in good contact with the crucible. Closing this gap helps stop material that is evaporating from the active crucible pocket from migrating to inactive pockets, located under the cover, during the evaporation process. 1. A crucible cover for a multiple pocket vapor source that produces vapor by an electron beam directed to uncovered crucible pockets , the cover comprising:a cover body having a covering surface, a cover opening and a cover opening edge along the cover opening, the covering surface facing a crucible having a crucible surface with a plurality of pockets formed therein for holding coating materials to be evaporated where the pockets are covered or uncovered by automatically lifting the crucible cover, rotating the crucible and lowering the crucible cover to thereby align one of the plurality of pockets with the cover opening; anda cover insert has an insert bottom surface and an open area that coincides with the cover opening wherein the cover insert is removably coupled to the cover body wherein the insert bottom surface extends below the covering surface, the cover insert connected along the edge of the cover opening wherein the cover insert becomes partially decoupled from the cover body when the cover body is lowered relative to the crucible and the cover insert contacts the crucible.2. ...

COATING SYSTEM AND PROCESS

A coating system for coating a part (), such as a turbine blade or vane, has a mask () positioned adjacent to a first portion () of the part () to be coated and a mechanism () for moving the mask () relative to the part (). The mechanism () may be a gear mechanism or a magnetic mechanism. 116-. (canceled)17. A coating process comprising the steps of:positioning a part within a coating chamber;positioning a mask adjacent to a first portion of said part;creating a coating vapor within said coating chamber;periodically moving said mask relative to said first portion of said part during the coating process by use of a gear mechanism, said gear mechanism includes one gear that is configured to be counter rotational and configured to move said mask back and forth; wherein said first portion is a leading edge of an airfoil portion of said part; andmoving said mask from a position adjacent said leading edge to a position adjacent a suction side of said airfoil portion between 5 to 20 rotations of the part about a longitudinal axis thereof.18. The coating process of claim 17 , wherein said moving step comprises moving said mask away from said leading edge a distance as slight as a width of said mask.19. The coating process of claim 17 , further comprising rotating said mask and said part at different speeds. The present disclosure relates to a coating system for coating a part, such as a turbine engine component, and to a process for coating the part.During EB-PVD ceramic coating, gas turbine blades and vanes are placed into fixture cans to protect under platform surfaces from being coated. The fixture cans are moved spatially and rotated through the vapor cloud of coating material to deposit coating thicknesses on airfoil and platform surfaces. Tumblers and rake arms are commonly used to provide these motions.In the tumbler approach, the longitudinal axis of the airfoil is maintained at a roughly constant angle relative to the vertical axis of the coater. The part rotates ...

Semiconductor Device And Method For Producing A Glass-Like Layer

A method for producing a glass-like layer () on a substrate, e.g. a power semiconductor substrate (), is disclosed. The method comprises the deposition of a glass-like layer vapor-deposited material with plasma-assisted electron beam evaporation. An electronic component can be produced using this method.

GAS BARRIER LAMINATE AND METHOD FOR PRODUCING THE GAS BARRIER LAMINATE

A gas barrier laminate of the present invention includes a biaxially-oriented polypropylene base and an aluminum oxide thin film formed on one surface of the biaxially-oriented polypropylene base. The biaxially-oriented polypropylene base has a plane orientation factor ΔP ranging from 0.005 to 0.020 according to phase-contrast measurement. Further, the gas barrier laminate of the present invention includes a biaxially-oriented polypropylene base and an aluminum oxide thin film formed on one surface of the biaxially-oriented polypropylene base. The biaxially-oriented polypropylene base has a molecular chain whose orientation angle measured by phase-contrast measurement ranges from 50° to 90° or from −50° to −90° relative to an MD direction. 1. A gas barrier laminate comprising:a base formed of a biaxially-oriented polypropylene film; andan aluminum oxide thin film formed on at least one surface of the base, wherein:the biaxially-oriented polypropylene film has a molecular chain whose orientation angle measured by phase-contrast measurement ranges about from 50° to 90° or −50° to −90° relative to an MD direction, and has a plane orientation factor ΔP ranging from about 0.005 to about 0.020 according to phase-contrast measurement.2. The gas barrier laminate of claim 1 , wherein the aluminum oxide thin film shows a ratio of oxygen and aluminum (O/Al) ranging from about 1.0 to about 1.5 as calculated by X-ray photoelectron spectroscopy.3. The gas barrier laminate of claim 1 , wherein the aluminum oxide thin film has a thickness of about 10 to about 300 nm.4. The gas barrier laminate of claim 1 , wherein the base and the aluminum oxide thin film are interposed therebetween by an anchor coat layer.5. The gas barrier laminate of claim 4 , wherein the anchor coat layer uses a material selected from a polyester resin claim 4 , a urethane resin claim 4 , an acrylic resin claim 4 , and an oxazoline group-containing resin.6. The gas barrier laminate of claim 1 , wherein the base ...

Coated Articles and Manufacture Methods

An article ( 50; 100 ) has a metallic substrate ( 22 ), a bondcoat ( 30 ) atop the substrate, and a thermal barrier coating ( 28; 27, 28 ) atop the bondcoat. The thermal barrier coating or a layer thereof comprises didymium oxide ore and zirconia.

IN-SITU MONITORING OF FABRICATION OF INTEGRATED COMPUTATIONAL ELEMENTS

Techniques include receiving a design of an integrated computational element (ICE), the ICE design including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, complex refractive indices of adjacent layers being different from each other, and a notional ICE fabricated in accordance with the ICE design being related to a characteristic of a sample; forming at least some of the plurality of layers of the ICE in accordance with the ICE design; performing at least two different types of in-situ measurements; predicting, using results of the at least two different types of in situ measurements, performance of the ICE relative to the ICE design; and adjusting the forming of the layers remaining to be formed, at least in part, by updating the ICE design based on the predicted performance.

ELECTRON BEAM-INDUCED ETCHING

Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NFis used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

RADIO-WAVE-PENETRABLE LAYER HAVING METALLIC LUSTER

Disclosed is a coating layer penetrable by radio wave and having a metallic luster. The coating layer includes a resin layer as an outmost layer to an exterior or front, a metallic texture layer formed on a rear side of the resin layer and comprising a optical film layer including metal oxides having different refractive indexes, and a germanium (Ge) layer to reflect light and a reflection layer formed on the rear side of the metallic texture layer. 114-. (canceled)15. A method of producing a coating layer , comprising:washing and activating a surface of a resin layer using a plasma converted from argon gas;radiating an electron beam using a first refractive material and a second refractive material to form a multilayered optical film layer on the surface of the resin layer,radiating an electron beam using germanium to form a germanium layer.16. The method of claim 15 , wherein the first refractive material comprises TiOand/or CrO.17. The method of claim 15 , wherein the second refractive material comprises SiO.18. The method of claim 15 , wherein the germanium layer is formed on a front side of the multilayered optical film layer claim 15 , on a rear side of the multilayered optical film layer claim 15 , or between the first refractive material and the second refractive material. The present application claims priority to Korean Patent Application No. 10-2015-0175332, filed Dec. 9, 2015 and No. 10-2016-0115705, filed Sep. 8, 2016, the entire content of which is incorporated herein for all purposes by this reference.The present invention relates to a coating layer, or particularly a radio-wave-penetrable coating layer having a metallic luster, such that the coating layer of the present invention may protect SCC radar while radio waves may penetrate the coating layer.A smart cruise control (SCC) system detects movement of a preceding vehicle using a radar mounted on a front portion of a vehicle, thereby controlling engine and brakes to maintain a distance from the ...

Coating arrangement and method

In accordance with various embodiments, a coating arrangement may comprise: an electron beam gun for providing an electron beam; a beam trap for trapping the electron beam; a control device for driving the electron beam gun and/or the beam trap, wherein the control device is configured to switch over the driving between a plurality of configurations, of which: in a first configuration, the electron beam is directed onto the beam trap; and in a second configuration, the electron beam is directed past the beam trap. 1. A coating arrangement , comprising:an electron beam gun for providing an electron beam;a beam trap for trapping the electron beam;a control device for driving the electron beam gun and/or the beam trap,wherein the control device is configured to switch over the driving between a plurality of configurations, of which:in a first configuration, the electron beam is directed onto the beam trap; andin a second configuration, the electron beam is directed past the beam trap.2. The coating arrangement as claimed in claim 1 ,wherein the beam trap comprises a heat exchanger and/or remains in a solid state of matter up to a temperature, wherein the temperature is greater than 1000° C.3. The coating arrangement as claimed in claims 1 ,wherein the beam trap provides a reflection coefficient and an absorption coefficient for electrons, wherein the reflection coefficient is greater than the absorption coefficient.4. The coating arrangement as claimed in claim 1 ,wherein an averaged spatial power density provided by the electron beam is greater in the second configuration than in the first configuration.5. The coating arrangement as claimed claim 1 ,wherein, in the first configuration, the electron beam irradiates a surface of the beam trap, wherein an angle of incidence of the electron beam with respect to the surface is greater than 45°.6. The coating arrangement as claimed in claim 1 ,wherein the beam trap is mounted displaceably between two positions relative to ...

Coated cutting tool

Provided is a coated cutting tool having improved wear resistance and fracture resistance and a long tool life. The coated cutting tool includes a substrate, and a coating layer formed on a surface of the substrate. The coating layer has a laminated structure in which a first layer and a second layer are alternately laminated for one or more layers. The first layer is a compound layer having a composition represented by Ti(C x N 1-x ). The second layer is a compound layer having a composition represented by (Ti y Al 1-y )N. The laminated structure includes first to third laminated structures in this order from a substrate side to a surface side of the coating layer. An average thickness per layer of each of the first layer and the second layer in the first to third laminated structures is in a specific range. An average thickness of the first to third laminated structures is in a specific range.

Sapphire thin film coated flexible substrate

A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates. 1. A method for coating sapphire (AlO) onto flexible substrate comprising;at least one first deposition process to deposit at least one first thin film onto at least one first substrate to form at least one first thin film coated substrate;at least one second deposition process to deposit at least one second thin film onto the at least one first thin film coated substrate to form at least one second thin film coated substrate;at least one third deposition process to deposit at least one catalyst onto the at least one second thin film coated substrate to form at least one catalyst coated substrate;{'sub': 2', '3', '2', '3, 'at least one fourth deposition process to deposit at least one sapphire (AlO) thin film onto the at least one catalyst coated substrate to form at least one sapphire (AlO) coated substrate;'}{'sub': 2', '3', '2', '3', '2', '3, 'at least one annealing process, wherein said at least one sapphire (AlO) coated substrate is annealed under an annealing temperature ranging from 300° C. to less than a melting point of sapphire (AlO) for an effective duration of time to form at least one harden sapphire (AlO) thin film coated substrate;'}{'sub': 2', '3', '2', '3, 'attaching at least one flexible substrate to the at least one harden sapphire (AlO) thin film coated substrate on the at least one sapphire (AlO) thin film;'}{'sub': 2', '3', '2', '3, 'at least one mechanical detachment process detaching the at least one harden sapphire (AlO) thin film together with the at least one second thin film from the at least one first thin film coated substrate to form at least one second thin film coated ...

RECONFIGURABLE GAS SENSOR ARCHITECTURE WITH A HIGH SENSITIVITY AT LOW TEMPERATURES

A gas sensing device includes a dielectric substrate, a heater integrated into a first side of the substrate and an insulating dielectric formed over the heater. A gas sensing layer is formed on a second side of the substrate opposite the first side. Contacts are formed on the gas sensing substrate. A noble material is formed on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas. 1. A method for fabricating a gas sensing device , comprising:forming a heater on a first side of a dielectric layer;depositing an insulating dielectric over the heater;forming a metal-oxide semiconductor gas sensing layer on a second side of the dielectric layer opposite the first side;patterning contacts on the gas sensing substrate; anddepositing a noble material on a portion of the gas sensing layer between the contacts to act as an ionizing catalyst such that, upon heating to a temperature, adsorption of a specific gas changes electronic properties of the gas sensing layer to permit detection of the gas.2. The method as recited in claim 1 , wherein the heater includes Yagi Uda antenna elements configured to distribute heat to the gas sensing layer in a uniform manner and further comprising heating the gas sensing layer with the heater to a temperature between about 150 to about 250 degrees C.3. The method as recited in claim 1 , wherein sensitivity to a gas to be detected is increased by at least one of:forming grain boundaries in the gas sensing layer of a particular size; andselecting a material and geometry for the noble material to be sensitive to detection of different gases at different temperatures.4. The method as recited in claim 1 , wherein the heater a width and a length are adjusted to reduce power consumption and to focus heat energy.5. The method as recited in claim 1 , wherein the ...

REAL-TIME AND LABEL-FREE APPROACH FOR CANCER DIAGNOSIS

An electrochemical probe for in-vivo measurement of HOoxidation within a living tissue. The electrochemical probe includes a sensing part and a handle. The sensing part includes a working electrode including a first biocompatible conductive needle, a counter electrode including a second biocompatible conductive needle, and a reference electrode including a third biocompatible conductive needle. The working electrode, the counter electrode, and the reference electrode are configured to put in contact with the living tissue by inserting the sensing part into the living tissue. The handle includes an insertion part that may be configured to insert the sensing part into the living tissue. The sensing part is attached to the insertion part. 117-. (canceled)18- An electrochemical probe for in-vivo measurement of HOoxidation within a living tissue , comprising: a working electrode comprising a first biocompatible conductive needle;', 'a counter electrode comprising a second biocompatible conductive needle; and', 'a reference electrode comprising a third biocompatible conductive needle,', 'wherein the working electrode, the counter electrode, and the reference electrode are configured to be put in contact with the living tissue by inserting the sensing part into the living tissue; and, 'a sensing part, comprisinga handle comprising an insertion part configured to insert the sensing part into the living tissue,wherein the sensing part is attached to the insertion part.191- The electrochemical probe of claim , wherein each of the first biocompatible conductive needle , the second biocompatible conductive needle , and the third biocompatible conductive needle comprises respective sensing tips , each sensing tip of the respective sensitive tips comprising:a respective catalyst layer deposited on the sensing tip; andan array of respective vertically aligned multi-walled carbon nanotubes (VAMWCNTs) grown on the respective catalyst layer.20- The electrochemical probe of claim 19 , ...

METHOD FOR GROWING CARBON NANOTUBES

A method of growing carbon nanotubes is related. A reactor is provided. The reactor includes a reactor chamber and a carbon nanotube catalyst composite layer suspended in the reactor chamber. The carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber to penetrate the carbon nanotube catalyst composite layer. The carbon nanotube catalyst composite layer is heated. 1. A method of growing carbon nanotubes , the method comprising:constructing a reactor, wherein the reactor comprises a reactor chamber and a carbon nanotube catalyst composite layer suspended in the reactor chamber, and the carbon nanotube catalyst composite layer comprises a carbon nanotube layer and a plurality of catalyst particles dispersed in the carbon nanotube layer;introducing a mixture of carbon source gas and carrier gas into the reactor chamber to penetrate the carbon nanotube catalyst composite layer; andheating the carbon nanotube catalyst composite layer.2. The method of claim 1 , wherein the plurality of catalyst particles are deposited on the carbon nanotube layer via electron beam evaporation claim 1 , thermal chemical vapor deposition claim 1 , or sputtering method.3. The method of claim 1 , wherein a flow direction of the mixture of carbon source gas and the carrier gas is perpendicular to a surface of the carbon nanotube catalyst composite layer.4. The method of claim 1 , wherein the heating the carbon nanotube catalyst composite layer comprises introducing a current to the carbon nanotube layer.5. The method of claim 4 , wherein the introducing the current to the carbon nanotube layer comprises applying a voltage between a first electrode electrically connected to the carbon nanotube layer and a second electrode electrically connected to the carbon nanotube layer and spaced from the first electrode.6. The ...

Deposition of Integrated Computational Elements (ICE) Using a Translation Stage

The disclosed embodiments include a system and method for manufacturing an integrated computational element (ICE) core. The method comprises varying a distance between a thermal component relative to a substrate holder that holds at least one substrate during a thin film deposition process to improve uniformity of the ICE core. In one embodiment, varying the distance between the thermal component relative to the substrate holder that holds at least one substrate includes moving at least a portion of the substrate holder in at least one direction relative to the thermal component and also moving the thermal component in at least one direction relative to the substrate holder during the thin film deposition process. 1. A method for manufacturing an integrated computational element (ICE) core , the method comprising:varying a distance between a thermal component relative to a substrate holder that holds at least one substrate during a thin film deposition process to improve uniformity of the ICE core.2. The method according to claim 1 , wherein varying the distance between the thermal component relative to the substrate holder that holds at least one substrate includes moving the thermal component in an x-direction.3. The method according to claim 1 , wherein varying the distance between the thermal component relative to the substrate holder that holds at least one substrate includes moving the thermal component in a y-direction.4. The method according to claim 1 , wherein varying the distance between the thermal component relative to the substrate holder that holds at least one substrate includes moving the thermal component in a z-direction.5. The method according to claim 1 , wherein varying the distance between the thermal component relative to the substrate holder that holds at least one substrate includes moving the thermal component in at least two directions.6. The method according to claim 1 , wherein varying the distance between the thermal component relative ...

Coating Methods and Apparatus

An apparatus for depositing a coating on a part comprises: a chamber; a source of the coating material, positioned to communicate the coating material to the part in the chamber; a plurality of thermal hoods; and means for moving a hood of the plurality of thermal hoods from an operative position and replacing the hood with another hood of the plurality of hoods.

FLUORINE-DOPED OPTICAL MATERIALS FOR OPTICAL COMPONENTS

An optical component includes an optical material which is a fluorine (F)-containing optical material doped with an F-containing species different from the F-containing optical material. A coating system for depositing the optical material onto a substrate or a bulk material of an optical component is an electron beam evaporation coating system, an ion assisted deposition coating system, or an ion beam sputtering coating system. 1. A coating system for depositing an optical material onto at least one sample , where the at least one sample is a substrate or a bulk material of an optical component , the coating system comprising:a vacuum chamber;a substrate holder positioned at a first location within the vacuum chamber, the substrate holder having at least one recess to support the at least one sample;a rotating axis supporting the substrate holder and configured to rotate the substrate holder as the optical material is deposited onto the at least one sample;a container positioned at a second location within the vacuum chamber, the container containing a target material to be deposited as the optical material onto the at least one sample, the target material including an F-containing optical material;an electron gun positioned adjacent to the container and configured to generate an electron beam, the electron beam being directed to the target material to melt and evaporate the target material in a gaseous form which is then condensed as the optical material onto the at least one sample; andan inlet disposed on the vacuum chamber and through which an F-containing species is introduced into the vacuum chamber, the F-containing species being mixed with the target material in the gaseous form and deposited onto the at least one sample with the target material in the gaseous form.2. The coating system of claim 1 , wherein the F-containing optical material is selected from the group consisting of MgF claim 1 , LaF claim 1 , LiF claim 1 , BaF claim 1 , AlF claim 1 , GdF ...

SURFACE COATING FOR CHAMBER COMPONENTS USED IN PLASMA SYSTEMS

Disclosed herein are surface coatings for plasma components that have the benefit of being robust against chemical and plasma physical attack in aggressive (e.g., fluorine-based) plasma environments. The coatings also provide low plasma surface recombination rates for active oxygen, nitrogen, fluorine, and hydrogen species when compared with other known surface treatments. The coatings can be applied to any plasma system component not requiring etching or plasma cleaning including but not limited to materials like quartz, aluminum, or anodized aluminum. Additionally, the efficiency of the system is increased by applying a non-reactive coating to system components thereby increasing the flow of excited plasma species to the plasma chamber of the system. 2. The coating of claim 1 , wherein the coating is yttria comprising:yttrium in an amount of about 60% to about 80%;oxygen in an amount of about 20% to about 40%.3. The coating of claim 1 , wherein the coating is aluminum oxynitride comprising:aluminum in an amount of between about 25% to about—60%;oxygen in an amount of between about 20% to about 40%;nitrogen in an amount of between about 20% to about 40%.4. The coating of claim 1 , wherein the plasma comprises one or more of:atomic oxygen, molecular oxygen, atomic hydrogen, molecular hydrogen, atomic nitrogen, molecular nitrogen, molecular argon, atomic argon, atomic fluorine, molecular fluorine.5. The coating of claim 4 , wherein the plasma comprises one or more of a fluorine-bearing plasma claim 4 , an oxygen-bearing plasma claim 4 , a hydrogen-bearing plasma and a nitrogen-bearing plasma.6. The coating of - claim 4 , wherein the fluorine-bearing plasma comprises: CF4 claim 4 , CHF3 claim 4 , CF3H claim 4 , C2F6 claim 4 , C4F8 claim 4 , SF6 claim 4 , NF3 claim 4 , F2 and C4F8O.7. The coating of - claim 4 , wherein the oxygen-bearing plasma comprises: O2 claim 4 , O3 claim 4 , N2O claim 4 , CO claim 4 , CO2 claim 4 , C4F8O claim 4 , H2O and H2O2.8. The coating of - ...

Microfabrication

A microfabrication apparatus for fabricating a microstructure on a substrate is disclosed and comprises a partitioning system arranged to provide an aperture, a particle source that can generate a beam of particles for patterning the substrate and a substrate holder which supports the substrate. Relative motion is effected between the aperture and the substrate over a portion of the substrate's surface so that different points on the surface portion are exposed at different times. Whilst that motion is ongoing, one or more exposure conditions are varied so that the different points are subject to different exposure conditions. Corresponding microfabrication processes and products obtained thereby are also disclosed. 1. A microfabrication apparatus for fabricating microstructures on a substrate , the apparatus comprising:a partitioning system arranged to provide an aperture;a particle source forward of the aperture and configured when active to generate a beam of particles for patterning a substrate, the beam directed towards and encompassing the aperture, wherein the partitioning system inhibits the passage of the beam other than through the aperture;a substrate holder configured to support the substrate behind the aperture, thereby exposing the substrate to only those parts of the beam which pass through the aperture;a drive mechanism coupled to the substrate holder and/or the partitioning system; anda controller configured when the particle source is active to control the drive mechanism to effect relative motion between the aperture and the substrate over a portion of the substrate's surface so that different points on the surface portion are exposed at different times, and whilst that motion is ongoing to vary one or more exposure conditions so that the different points are subject to different exposure conditions, those conditions determining the manner in which the substrate is patterned by the beam at those points, thereby fabricating a pattern on the surface ...

METHOD FOR DETERMINING MATERIAL REMOVAL AND DEVICE FOR THE BEAM MACHINING OF A WORKPIECE

A method for determining material removal by an ion beam () on a test workpiece () which is disposed in a machining chamber () of a housing () of a device () for beam machining, wherein the test workpiece () has a substrate () and a layer () applied to the substrate. The method includes a) optically determining a layer thickness (d) of the layer applied to the substrate, b) removing material of the layer from the test workpiece with the ion beam, c) optically determining the layer thickness (d) of the layer applied to the substrate, and d) determining the material removal by comparing the layer thickness determined in step a) with the layer thickness determined in step c). Also disclosed is a device () for beam machining a workpiece () with which the method can be carried out. 1. A method for determining a material removal (Δd) by an ion beam on a test workpiece which is disposed in a machining chamber of a housing of a device for beam machining , wherein the test workpiece has a substrate and a layer applied to the substrate and wherein the machining chamber has an imaging optical unit having an entry-side part , and has a shielding annularly surrounding the entry-side part of the imaging optical unit and the test workpiece , the method comprising:{'b': '1', 'a) optically determining, initially, a layer thickness (d) of the layer applied to the substrate,'}b) removing material of the layer of the test workpiece with the ion beam,{'b': '2', 'c) optically determining the layer thickness (d) of the layer applied to the substrate subsequent to said removing, and'}{'b': 1', '2, 'claim-text': 'wherein the shielding protects the test workpiece and the entry-side part of the imaging optical unit during said removing of the material of the test workpiece.', 'd) determining the material removal (Δd) by comparing the layer thickness (d) determined in said initial determining with the layer thickness (d) determined in said subsequent determining,'}2. The method as claimed in ...

CANTILEVER SENSORS FOR MOLECULE DETECTION

A method of preparing a cantilever sensor for measuring biochemical interactions and their associated stress wherein a cantilever having two sides is coated on one side with at least a gold layer and both sides of the cantilever are functionalized with a self-assembled monolayer (SAM) of a probe molecule by incubating the cantilever in a solution having a concentration of the probe molecule of between 1 to 1000 μM. The unpassivated cantilever sensor comprising a layer coated on one side with a coating comprising gold and being unpassivated on the opposite side, wherein both surfaces comprises a self-assembled monolayer of a probe molecule in which the surface area occupied per probe molecule varies in the range 0.4-1.5 nm2, enabling the stress at the gold top surface that is not cancelled out by a counter stress from the bottom surface so that accurate quantitation of a target molecule is achieved. 1. An unpassivated cantilever sensor having two sides comprising a polyamide or silicon layer coated on one side with a coating comprising at least a gold layer and being uncoated or unpassivated on the opposite side , wherein the gold layer-coated surface comprises a self-assembled monolayer (SAM) of a probe molecule bound to a linker and wherein the surface area occupied per probe molecule ranges from about 0.4 to about 1.5 nm.2. The unpassivated cantilever of claim 1 , wherein the coating comprising at least a gold layer is a coating comprising a base titanium layer and a top gold layer.3. The unpassivated cantilever of claim 2 , wherein the thickness of the titanium layer is between 1 and 5 nm.4. The unpassivated cantilever of claim 2 , wherein the thickness of the gold layer is between about 5 and about 50 nm.5. The unpassivated cantilever of claim 2 , wherein the thickness of the gold layer is between about 10 and about 20 nm.6. The unpassivated cantilever of claim 1 , wherein the self-assembled monolayer is an alkanethiol self-assembled monolayer in which the ...

Ion Milling Apparatus and Sample Holder

An ion milling apparatus has: a sample holder including a shield member for shielding the sample except for a portion to be milled; and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween. The shield member has an edge portion that determines a milling position on or in the sample. The sample locking member is disposed downstream of the edge portion in the direction of irradiation by the ion beam and has a support portion cooperating with the edge portion to support the milled portion therebetween. The support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface. The given angle is equal to or less than 90°. 1. An ion milling apparatus for milling a sample by ion beam irradiation , the ion milling apparatus having a sample holder for supporting the sample;wherein the sample holder has both a shield member for shielding the sample except for a portion to be milled and a sample locking member cooperating with the shield member such that the sample is sandwiched and held therebetween, the shield member having an edge portion that determines a milling position on or in the sample;wherein the sample locking member is disposed downstream of the edge portion in the direction of the ion beam irradiation and has at least one support portion cooperating with the edge portion to support the milled portion therebetween; andwherein the at least one support portion has a first surface making contact with the sample and a second surface making a given angle to the first surface, the given angle being equal to or less than 90°.2. An ion milling apparatus as set forth in claim 1 , wherein said given angle is an acute angle.3. An ion milling apparatus as set forth in claim 1 , wherein said sample and said sample locking member are simultaneously milled by the ion beam irradiation.4. An ion milling apparatus as set forth in claim 1 , further comprising a ...

Coating packaged chamber parts for semiconductor plasma apparatus

An advanced coating for parts used in plasma processing chamber. The advanced coating is formed over an anodized surface that has not been sealed. After the coating is formed, the coated area is masked, and the remaining anodized surface is sealed. The porous and rough structure of the anodized but un-sealed aluminum enhances adhesion of the coating. However, to prevent particle generation, the exposed anodized surface is sealed after formation of the coating. The coating can be of yttria, formed by plasma enhanced atomic deposition techniques which results in a dense and smooth coating.

PROCESS FOR MANUFACTURING GLAZING COMPRISING A POROUS LAYER

A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements. 1. A process for manufacturing glazing comprising a provided with a coating comprising at least one layer consisting of a porous material , for which the refractive index is thus reduced thereby , comprising:depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating comprising a layer of a material comprising at least one element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of said elements, oxygen and carbon, said layer in addition optionally comprising hydrogen,heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and said layer of porous material to be obtained,wherein said deposition is carried out, on the substrate passing through said chamber, by the sputtering of a carbon target, under a reactive, plasma atmosphere comprising at least one precursor of the element or elements.2. The process as claimed in claim 1 , wherein the power applied to the cathode is between 0.5 and 20 kW/m.3. The process as claimed in claim 1 , wherein the total pressure of the gases in the vacuum chamber is between 0.1 and 2 Pa.4. ...

GAS BARRIER MULTILAYER FILM AND METHOD FOR PRODUCING THE SAME

A gas barrier multilayer film includes a film substrate, a layer formed on at least one surface of the film substrate and made of an inorganic compound, and a gas barrier layer formed on the layer made of the inorganic compound and formed of a mixture, which contains an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the poly(meth)acrylic acid with zinc is not larger than about 25 mol %, a sugar or starch, and a hypophosphite wherein the hypophosphite is present at about 1 mass % to about 15 mass % of a total solid content of the mixture. 1. A gas barrier multilayer film comprising:a film substrate;a layer formed on at least one surface of the film substrate and made of an inorganic compound; anda gas barrier layer formed on the layer made of the inorganic compound and formed of a mixture, which contains an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the poly(meth)acrylic acid with zinc is not larger than about 25 mol %, a sugar or starch, and a hypophosphite wherein the hypophosphite is present at about 1 mass % to about 15 mass % of a total solid content of the mixture.2. The gas barrier multilayer film of claim 1 , wherein the layer made of the inorganic compound is formed by a vacuum deposition process and can be made of at least one member selected from the group consisting of aluminum claim 1 , aluminum oxide claim 1 , magnesium oxide and silicon oxide.3. A method for manufacturing a gas barrier multilayer film comprising:forming a gas barrier layer on a layer which is formed on at least one surface of a film substrate and made of an inorganic compound, wherein when the gas barrier layer is formed, a coating solution, which is comprised of a mixture of an acrylic acid polymer made of poly(meth)acrylic acid or a partially neutralized product thereof wherein a degree of neutralization of the ...

SYSTEMS AND METHODS UTILIZING LONG WAVELENGTH ELECTROMAGNETIC RADIATION FOR FEATURE DEFINITION

Methods that include directing an incident beam towards a substrate, the substrate having one or more features formed thereon wherein the incident beam has a wavelength from about 10 μm to about 10 mm, and the incident beam interacts with the substrate to form a modulated beam; varying one or more characteristics of the incident beam while directed towards the substrate; detecting the modulated beam while varying the one or more characteristics of the incident beam to collect a spectrum; and determining at least one spatial metric of the at least one feature based on the collected spectrum. 1. A method comprising:directing an incident beam towards a substrate, the substrate having one or more features formed thereon wherein the incident beam has a wavelength from about 10 μm to about 10 mm, and the incident beam interacts with the substrate to form a modulated beam;varying one or more characteristics of the incident beam while directed towards the substrate;detecting the modulated beam while varying the one or more characteristics of the incident beam to collect a spectrum; anddetermining at least one spatial metric of the at least one feature based on the collected spectrum.2. The method according to claim 1 , wherein the one or more characteristic that is changed is the angle of incidence of the incident beam3. The method according to claim 1 , wherein the one or more characteristic that is changed is the wavelength of the incident beam4. The method according to further comprising gathering a standard spectrum from a standard sample claim 1 , and normalizing the spectrum based on the standard spectrum in order to determine the at least one spatial metric.5. The method according to further comprising predicting a theoretical spectrum that would be generated from a substrate having desired features claim 1 , and comparing the collected spectrum to the theoretical spectrum to predict a spatial metric.6. The method according to claim 1 , wherein the spatial metric is ...

PLASMA GENERATION CHAMBER WITH SMOOTH PLASMA RESISTANT COATING

A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%. 1. A plasma generation chamber comprising:a faceplate having a first plasma resistant ceramic coating on a surface of the faceplate, wherein the first plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%;a selectivity modulation device (SMD) having a second plasma resistant ceramic coating on a surface of the SMD, wherein the second plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%; anda dielectric separator separating the faceplate from the selectivity modulation device;wherein the plasma generation chamber is to generate plasma for a processing chamber by accelerating radicals from the faceplate toward the SMD and through a plurality of holes in the SMD.2. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second plasma resistant ceramic coating each have a surface roughness of less than 32 micro-inches and a variation in surface roughness of less than 4 micro-inches.3. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second plasma resistant ceramic coating each have a variation in thickness of less than 0.4 microns.4. The plasma generation chamber of claim 1 , wherein wafers etched using plasma provided by the plasma generation chamber have a surface non-uniformity of approximately 3-5%.5. The plasma generation chamber of claim 1 , wherein the first plasma resistant ceramic coating and the second ...

PLASMA ETCHING DEVICE WITH PLASMA ETCH RESISTANT COATING

An apparatus for use in a plasma processing chamber is provided. The apparatus comprises part body and a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering a surface of the part body. 1. An apparatus for use in a plasma processing chamber , comprising:a part body; anda coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering at least part of a surface of the part body, wherein the coating is deposited by physical vapor deposition or chemical vapor deposition.2. The apparatus claim 1 , as recited in claim 1 , wherein the coating has a porosity of less than 1%.3. The apparatus claim 2 , as recited in claim 2 , wherein the part body is of ceramic.4. The apparatus claim 3 , as recited in claim 3 , wherein the part body forms an RF window or a gas injector.5. The apparatus claim 4 , as recited in claim 4 , wherein the coating is deposited by electron beam physical vapor deposition.6. The apparatus claim 4 , as recited in claim 4 , wherein the coating is deposited by ion assisted electron beam deposition.7. (canceled)8. The apparatus claim 1 , as recited in claim 1 , wherein the coating consists essentially of yttrium oxyfluoride.9. The apparatus claim 8 , as recited in claim 8 , wherein the coating has a thickness of 2-18 μm.10. The apparatus claim 1 , as recited in claim 1 , wherein the coating consists essentially of yttrium claim 1 , lanthanum claim 1 , zirconium claim 1 , samarium (Sm) claim 1 , gadolinium (Gd) claim 1 , dysprosium (Dy) claim 1 , erbium (Er) claim 1 , ytterbium (Yb) claim 1 , or thulium (Tm) in an oxyfluoride.11. (canceled)12. The apparatus claim 2 , as recited in claim 2 , wherein the coating consists essentially of yttrium oxyfluoride.13. The apparatus claim 2 , as recited in claim 2 , wherein the coating consists essentially of yttrium claim 2 ...

METHOD, COATING DEVICE AND PROCESSING ARRANGEMENT

The description relates to a method, a coating device and a processing arrangement. According to different forms of embodiment, the method may comprise the following steps: producing a vacuum in a coating region and in a collection region; emitting solid particles with a first main direction of propagation through the coating region into the collection region; and evaporating a coating material with a second main direction of propagation into the coating region, the first main direction of propagation and the second main direction of propagation extending at an angle to each other such that the coating material is evaporated past the collection region. 1. A method , comprising:producing a vacuum in a coating region and in a collecting region;emitting solid particles with a first main direction of propagation through the coating region into the collecting region;evaporating a coating material with a second main direction of propagation into the coating region, the first main direction of propagation and the second main direction of propagation extending at an angle to one another in such a way that the coating material is evaporated past the collecting region.2. The method as claimed in claim 1 , further comprising:collecting the solid particles in the collecting region after they have crossed through the coating region, by means of a collecting device and/or by means of a substrate.3. The method as claimed in claim 1 , further comprising:transporting the solid particles between the collecting region and a region having a pressure greater than vacuum during the emission of the solid particles.4. The method as claimed in claim 1 , further comprising:transporting the solid particles between an emission region and a region having a pressure greater than a vacuum during the emission of the solid particles from the emission region with the first main direction of propagation through the coating region into the collecting region.5. The method as claimed in claim 1 ,the ...

PHYSICAL VAPOR DEPOSITION USING ROTATIONAL SPEED SELECTED WITH RESPECT TO DEPOSITION RATE

An apparatus for use in a physical vapor deposition coating process includes a chamber, a crucible configured to hold a ceramic coating material in the chamber, an energy source operable to heat the interior of the chamber, a fixture for holding at least one substrate in the chamber, an actuator operable to rotate the fixture, and a controller configured to establish a plume of the ceramic coating material in the chamber to deposit the ceramic coating material from the plume onto the at least one substrate and form a ceramic coating thereon, and during the deposition, rotate the at least one substrate at a rotational speed selected with respect to deposition rate of the ceramic coating material onto the at least one substrate. 1. An apparatus for use in a physical vapor deposition coating process , comprising:a chamber;a crucible configured to hold a ceramic coating material in the chamber;an energy source operable to heat the interior of the chamber;a fixture for holding at least one substrate in the chamber;an actuator operable to rotate the fixture; anda controller configured to establish a plume of the ceramic coating material in the chamber to deposit the ceramic coating material from the plume onto the at least one substrate and form a ceramic coating thereon, and during the deposition, rotate the at least one substrate at a rotational speed selected with respect to deposition rate of the ceramic coating material onto the at least one substrate.2. The apparatus as recited in claim 1 , wherein the rotational speed is 12-120 revolutions per minute.3. The apparatus as recited in claim 1 , wherein the rotational speed is 30-60 revolutions per minute.4. The apparatus as recited in claim 1 , wherein the ceramic coating material is a zirconia-based material.5. The apparatus as recited in claim 1 , wherein the crucible is a tray and the ceramic coating material is a particulate.6. The apparatus as in claim 1 , wherein the energy source is an electron beam gun.7. The ...

ALKALI RESISTANT OPTICAL COATINGS FOR ALKALI LASERS AND METHODS OF PRODUCTION THEREOF

In one embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali. In another embodiment, a method for forming an alkali resistant coating includes forming two or more alternating layers of high and low refractive index oxide materials above a substrate, wherein an innermost layer of the two or more alternating layers is on an alkali-contacting side of the alkali resistant coating, and wherein the innermost layer of the two or more alternating layers comprises at least one of: alumina, zirconia, and hafnia. 1. A method for forming an alkali resistant coating , the method comprising:forming a first oxide material above a substrate; andforming a second oxide material above the first oxide material to form a multilayer dielectric coating,wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.2. The method as recited in claim 1 , wherein the alkali resistant coating produces reflectances of less than about 5% at an angle of incidence for a laser beam having a wavelength of between about 650 nm and about 900 nm.3. The method as recited in claim 1 , wherein the alkali resistant coating produces reflectances of greater than about 98% at pump wavelengths having an angle of incidence of between about 50° and about 90°.4. The method as recited in claim 1 , wherein the substrate defines a structure having an interior claim 1 , wherein the first oxide material and the second oxide material form concentric layers in the interior of the structure claim 1 , and wherein the second oxide material is an innermost layer of the concentric layers.5. The method as recited in claim 4 , wherein the innermost layer of the concentric layers protects subsequent layers ...

CRUCIBLE FOR ELECTRON-BEAM EVAPORATOR

Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al. 1. A crucible for an electron-beam evaporator , which is used in an evaporation source of the electron-beam evaporator , the crucible comprising:a storage unit which includes a wall and a bottom and in which a deposition material is placed; anda wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and which is combined with an exterior of the storage unit.2. The crucible of claim 1 , wherein the storage unit includes a material that induces a wetting phenomenon of Al claim 1 , and the wetting prevention unit includes a material that does not induce the wetting phenomenon of Al.3. The crucible of claim 2 , wherein the storage unit includes any one selected from W claim 2 , Mo claim 2 , Ta claim 2 , and TiB claim 2 , BN claim 2 , and TiB.BN materials.4. The crucible of claim 3 , wherein the wetting prevention unit includes a ceramic material.5. The crucible of claim 3 , wherein the wetting prevention unit includes two combined parts including an internal unit and an external unit claim 3 , the internal unit includes a ceramic material claim 3 , and the external unit includes a ...

DYNAMIC APERTURE FOR THREE-DIMENSIONAL CONTROL OF THIN-FILM DEPOSITION AND ION-BEAM EROSION

A dynamic aperture system includes at least one baffle array including a plurality of baffle elements, at least one source configured to provide atoms for differential deposition or ions for differential erosion, and an actuator configured to independently translate each baffle element in order to selectively modify at least one of a shape or size of an aperture formed in the baffle array in real-time. 1. A dynamic aperture system comprising:at least one baffle array comprised of a plurality of baffle elements;at least one source configured to provide atoms for differential deposition or ions for differential erosion; andan actuator configured to independently translate each of the plurality of baffle elements in order to selectively modify at least one of a shape or size of an aperture formed in the baffle array in real-time.2. The dynamic aperture system of claim 1 , wherein each baffle element is configured to translate such that the size of the aperture is increased to deposit more atoms or ions on a substrate and to translate such that the size of the aperture is decreased to deposit less atoms or ions on the substrate.3. The dynamic aperture system of claim 1 , wherein the actuator comprises at least one brushless DC motor and an encoder.4. The dynamic aperture system of claim 1 , wherein the actuator comprises a plurality of stepper motors and a single limit switch.5. The dynamic aperture system of claim 1 , wherein the at least one baffle array comprises a plurality of baffle arrays claim 1 , wherein the plurality of baffle elements of each of the plurality of baffle arrays are configured to translate independent of the baffle elements of another baffle array.6. The dynamic aperture system of claim 5 , further comprising a plurality of apertures claim 5 , each aperture of the plurality of apertures having an associated shape and size.7. The dynamic aperture system of claim 6 , wherein the plurality of apertures each have the same shape and size.8. The ...

SYNTHESIS AND USE OF MATERIALS FOR ULTRAVIOLET FIELD-EMISSION LAMPS

Processes for synthesizing the hexagonal polymorph of boron nitride (h-BN) produce h-BN of a grade that is highly suitable for ultraviolet (UV) field-emission lights and other UV applications. 1. An article of manufacture comprising hexagonal boron nitride (h-BN) , wherein the h-BN is manufactured by a process comprising:{'sup': '−6', 'claim-text': generating particles comprising boron from a source comprising boron, wherein the source is inside the high-vacuum chamber;', 'receiving the particles generated from the source at a substrate that is inside the high-vacuum chamber; and', 'forming the h-BN on the substrate, the h-BN comprising the particles received from the source; and, 'inside a high-vacuum chamber that is at a pressure of less than 10Torrwherein the h-BN manufactured by the process has an emission spectrum comprising a first luminescence peak at a wavelength less than 230 nanometers (nm) and a second luminescence peak at a wavelength greater than 230 nm, and wherein the first luminescence peak is greater than the second luminescence peak by a ratio of at least 30-to-one.2. The article of manufacture of claim 1 , wherein the process comprises controlling the pressure inside the high-vacuum chamber in a range between 10Torr and 10Torr.3. The article of manufacture of claim 1 , wherein the process further comprises heating the substrate to a temperature greater than 700 degrees-Celsius (° C.) and not greater than 1500° C.4. The article of manufacture of claim 1 , wherein the boron in the source is ultra-high purity greater than 99.9 percent.5. The article of manufacture of claim 1 , wherein the process further comprises receiving claim 1 , at the substrate claim 1 , nitrogen from a nitrogen plasma source.6. The article of manufacture of claim 1 , wherein the process further comprises introducing claim 1 , into the high-vacuum chamber claim 1 , a mixture of gases comprising nitrogen.7. The article of manufacture of claim 1 , wherein the process further ...

SUBSTRATE PROCESSING SYSTEM AND STATE MONITORING METHOD

A substrate processing system includes a substrate processing apparatus configured to process a substrate, a substrate transfer mechanism including a substrate holder configured to hold the substrate, an imaging device provided in the substrate transfer mechanism and configured to image a monitoring target member inside the substrate processing apparatus, and a controller. The controller is configured to cause the imaging device to image multiple portions of the monitoring target member, including a central portion facing a center of the substrate during processing and a peripheral edge portion facing a peripheral edge side of the substrate during the processing, by moving the substrate holder, and calculate, for each of the multiple portions of the monitoring target member, a physical amount indicating a state of the corresponding portion based on an imaging result. 1. A substrate processing system comprising:a substrate processing apparatus configured to process a substrate;a substrate transfer mechanism including a substrate holder configured to hold the substrate, the substrate transfer mechanism being configured to hold the substrate on the substrate holder and to load and unload the substrate into and out of the substrate processing apparatus;an imaging device provided in the substrate transfer mechanism and configured to image a monitoring target member inside the substrate processing apparatus; anda controller,wherein the controller is configured to:cause the imaging device to image multiple portions of the monitoring target member, including a central portion facing a center of the substrate during processing and a peripheral edge portion facing a peripheral edge side of the substrate during the processing, by moving the substrate holder; andcalculate, for each of the multiple portions of the monitoring target member, a physical amount indicating a state of the corresponding portion based on an imaging result.2. The substrate processing system of claim 1 , ...

Electron beam evaporator, coating apparatus and coating method

In accordance with various embodiments, an electron beam evaporator can comprise the following: a tubular target; an electron beam gun for producing at least one vapor source on a removal surface of the tubular target by means of an electron beam; wherein the removal surface is a ring-shaped axial end surface or a surface of the tubular target that extends conically or in a curved fashion from the free end edge.

ARTICLE HAVING OPTIMISED THERMOMECHANICAL PROPERTIES, COMPRISING A LAYER OF TITANO-ORGANIC NATURE

The invention relates to an article comprising a substrate having at least one major surface coated with a layer A of a material obtained by ion beam assisted vacuum deposition of at least one titanium oxide and of at least one organosilicate compound B, said material having a refractive index at 550 nm higher than or equal to 1.8, an extinction coefficient k at 550 nm lower than or equal to 0.02, and an H:E ratio higher than or equal to 0.046, where H and E designate the hardness of the material and the elastic coefficient of the material, respectively. 115.-. (canceled)16. An article comprising a substrate having at least one main surface coated with a layer A of a material obtained by vacuum deposition assisted by a source of ions of at least one titanium oxide and of at least one organosilicon compound B , wherein said material exhibits:a refractive index at 550 nm of greater than or equal to 1.8,an extinction coefficient k at 550 nm of less than or equal to 0.02,an H/E ratio of greater than or equal to 0.046, where H and E respectively denote the hardness of the material and the modulus of elasticity of the material.17. The article of claim 16 , wherein the deposition assisted by a source of ions is an ion bombardment.18. The article of claim 16 , wherein the compound B comprises at least one Si-C bond.20. The article of claim 16 , wherein the compound B is chosen from octamethylcyclotetrasiloxane claim 16 , 2 claim 16 ,4 claim 16 ,6 claim 16 ,8-tetramethylcyclotetrasiloxane claim 16 , decamethyltetrasiloxane claim 16 , decamethylcyclopentasiloxane claim 16 , dodecamethylpentasiloxane or hexamethyldisiloxane.21. The article of claim 16 , wherein the silicon atom or atoms of the compound B do not comprise any hydrolysable group or hydroxyl group.22. The article of claim 16 , wherein the titanium oxide is a substoichiometric titanium oxide.23. The article of claim 16 , wherein the layer A has a thickness ranging from 20 to 150 nm.24. The article of claim 16 , ...

Dual Laser Beam System Used With an Electron Microscope and FIB

The present invention discloses an electron microscope and FIB system for processing and imaging of a variety of materials using two separate laser beams of different characteristics. The first laser beam is used for large bulk material removal and deep trench etching of a workpiece. The second laser beam is used for finer precision work, such as micromachining of the workpiece, small spot processing, or the production of small heat affected zones. The first laser beam and the second laser beam can come from the same laser source or come from separate laser sources. Having one laser source has the additional benefits of making the system cheaper and being able to create separate external and internal station such that the debris generated from bulk material removal from the first laser beam will not interfere with vacuum or components inside the particle beam chamber. 1. A method of using a charged particle beam system , comprising:directing a first laser beam spot for the processing of a workpiece,directing a second laser beam spot for processing a second workpiece, anddirecting at least one particle beam within a vacuum chamber for processing said workpiece,wherein at least one of the said first laser beam spot or second laser beam spot is delivered inside said vacuum chamber.2. The method of wherein said at least one particle beam includes a focused ion beam.3. The method of wherein said at least one particle beam includes an electron microscope.4. The method of wherein said at least one particle beam includes both a focused ion beam and an electron micron microscope.5. The method of wherein after the first laser beam spot processes said workpiece claim 1 , said workpiece is transferred inside the vacuum chamber and is processed as said second workpiece.6. The method of wherein the processing of said workpiece and the processing of said second workpiece is performed simultaneously.7. The method of wherein the processing of said workpiece and the processing of ...

METHOD OF MANUFACTURING A HEMT DEVICE WITH REDUCED GATE LEAKAGE CURRENT, AND HEMT DEVICE

An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer. 1. A method , comprising: forming a gate electrode on a semiconductor body that includes a semiconductor heterostructure; and', forming a trench through the dielectric layer until a surface region of the heterostructure is reached;', 'forming a sacrificial layer in the trench and on the dielectric layer;', 'selectively removing the sacrificial layer from the trench, the selectively removing completely exposing said surface region of the heterostructure;', 'forming in the trench and on the sacrificial layer, by reactive evaporation, a protection layer made of a metal nitride;', 'forming a first metal layer on the protection layer; and', 'carrying out a lift-off step, simultaneously removing said sacrificial layer and portions of the protection layer and of the first metal layer on the sacrificial layer., 'forming a dielectric layer on the heterostructure, wherein forming the gate electrode comprises], 'manufacturing a high electron mobility transistor (HEMT) device of a normally-on type, the manufacturing including2. The method according to claim 1 , wherein forming the protection layer includes covering completely a bottom of the trench with said metal nitride.3. The method according to claim 1 , wherein forming the protection layer includes forming the protection layer with stuffed grain boundaries.4. The method according to claim 1 , wherein forming the protection layer includes depositing claim 1 , by a reactive-evaporation technique claim 1 , a material chosen from ...

FLEXIBLE VARIABLE EMISSIVITY ELECTROCHROMIC DEVICE AND PREPARATION METHOD

A flexible variable emissivity electrochromic device and a preparation method thereof are disclosed. The device includes a working electrode, a gel electrolyte layer, and a counter electrode sequentially from top to bottom. The working electrode includes a flexible polymer film and a metal film, the flexible polymer film is a surface-modified film and/or a film with a transition layer plated on a lower side thereof, and the metal film is deposited on the surface-modified film or the transition layer. The electrolyte layer includes a porous membrane and an electrolyte. The electrolyte is infiltrated in the porous membrane. The electrolyte includes an electrochromic material containing metal ions and a solvent, the metal ions enable reversible electrodeposition and dissolution, and metal of the metal ions is different from that used in the metal film. The preparation method includes preparing and assembling a working electrode, a gel electrolyte layer and a counter electrode. 1. A flexible variable emissivity electrochromic device , comprising a working electrode , a gel electrolyte layer , and a counter electrode sequentially from top to bottom; whereinthe working electrode comprises a flexible polymer film and a metal film, the flexible polymer film is a surface-modified film and/or a film with a transition layer plated on a lower side of the film, the metal film is deposited on the surface-modified film or the transition layer; andthe electrolyte layer comprises a porous membrane and an electrolyte, the electrolyte is infiltrated in the porous membrane; the electrolyte comprises an electrochromic material containing metal ions and a solvent, the metal ions enable a reversible electrodeposition and a dissolution, and a metal of the metal ions is different from a metal used in the metal film.2. The flexible variable emissivity electrochromic device according to claim 1 , wherein the flexible polymer film is at least one selected from the group consisting of ...

Deposition Apparatus and Methods

A deposition apparatus ( 20 ) comprising: a chamber ( 22 ); a process gas source ( 62 ) coupled to the chamber; a vacuum pump ( 52 ) coupled to the chamber; at least two electron guns ( 26 ); one or more power supplies ( 30 ) coupled to the electron guns; a plurality of crucibles ( 32,33,34 ) positioned or positionable in an operative position within a field of view of at least one said electron gun; and a part holder ( 170 ) having at least one operative position for holding parts spaced above the crucibles by a standoff height H. The standoff height H is adjustable in a range including at least 22 inches.

Thermal-barrier coating

Thermal-barrier coatings for protecting a substrate from heat include a nitride layer, with the nitride layer including an interstitial nitride of a transition metal. In some embodiments, the nitride layer may include, for example, titanium nitride, niobium nitride, hafnium nitride, vanadium nitride, or zirconium nitride. The implementations further include a method comprising providing a substrate for use in assembling structures (e.g., a turbine blade) configured to be exposed to high temperature conditions, and applying a coating to the substrate, with the coating comprising a nitride layer, and with the nitride layer comprising transition-metal nitride. 1. An apparatus comprising a substrate and a coating that comprises a nitride layer , wherein said nitride layer comprises an interstitial nitride of a transition metal.2. The apparatus of claim 1 , further comprising a top layer having an exposed face and a face that faces said nitride.3. The apparatus of claim 1 , wherein said nitride layer comprises titanium nitride.4. The apparatus of claim 1 , wherein said nitride layer comprises niobium nitride.5. The apparatus of claim 1 , wherein said nitride layer comprises hafnium nitride.6. The apparatus of claim 1 , nitride layer comprises vanadium nitride.7. The apparatus of claim 1 , wherein said nitride comprises zirconium nitride.8. The apparatus of claim 1 , wherein said nitride layer has a thickness of 100 nanometers.9. The apparatus of claim 1 , further comprising a refractory oxide ceramic disposed between said nitride layer and said substrate.10. The apparatus of claim 1 , further comprising a layer of 7YSX disposed between said nitride layer and said substrate.11. The apparatus of claim 1 , further comprising an alumina layer that faces said nitride layer claim 1 , wherein said alumina layer has an exposed face.12. The apparatus of claim 1 , further comprising an exposed layer of yttrium aluminum claim 1 , wherein said nitride layer faces said yttrium ...

ELECTRON BEAM PVD ENDPOINT DETECTION AND CLOSED-LOOP PROCESS CONTROL SYSTEMS

Embodiments described herein provide apparatus, software applications, and methods of a coating process, such as an Electron Beam Physical Vapor Deposition (EBPVD) of thermal barrier coatings (TBCs) on objects. The objects may include aerospace components, e.g., turbine vanes and blades, fabricated from nickel and cobalt-based super alloys. The apparatus, software applications, and methods described herein provide at least one of the ability to detect an endpoint of the coating process, i.e., determine when a thickness of a coating satisfies a target value, and the ability for closed-loop control of process parameters. 1. A method for detecting an endpoint of a coating process , the method comprising:measuring a temperature of a plurality of substrates being processed;comparing the measured temperature to a temperature threshold;upon determining that the measured temperature does not satisfy the temperature threshold, adjusting a parameter of the coating process;upon determining that the measured temperature satisfies the temperature threshold, measuring a thickness of a coating deposited on the plurality of substrates;comparing the measured coating thickness to a target coating thickness; andupon determining that the measured coating thickness does not satisfy the target coating thickness, depositing an additional thickness of the coating on the plurality of substrates.2. The method of claim 1 , further comprising:upon determining that the measured coating thickness satisfies the target coating thickness, identifying an endpoint of the coating process.3. The method of claim 1 , wherein the parameter of the coating process includes at least one of one or more axes of rotation of the plurality of substrates claim 1 , a speed of rotation of the plurality of substrates claim 1 , and a power provided to one or more electron beam generators.4. The method of claim 1 , further comprising:rotating each substrate of the plurality of substrates along more than one axis during ...

Electron beam pvd endpoint detection and closed-loop process control systems

Embodiments described herein provide apparatus, software applications, and methods of a coating process, such as an Electron Beam Physical Vapor Deposition (EBPVD) of thermal barrier coatings (TBCs) on objects. The objects may include aerospace components, e.g., turbine vanes and blades, fabricated from nickel and cobalt-based super alloys. The apparatus, software applications, and methods described herein provide at least one of the ability to detect an endpoint of the coating process, i.e., determine when a thickness of a coating satisfies a target value, and the ability for closed-loop control of process parameters.

Adaptive Materials and Systems for Manipulation of Electromagnetic Radiation

Fully artificial, adaptive composite materials and systems, having variable transmittance, reflectance, and/or absorptance to radiation in visible, infrared, or other desired region of the electromagnetic spectrum, and methods of the manufacture and use thereof are provided. The adaptive composite materials and systems possess an unprecedented combination of properties and are, therefore, poised to enable a broad range of practical applications. The adaptive composite material incorporates at least one size-variable active area having a variable transmittance, reflectance, and/or absorptance in at least a portion of the electromagnetic spectrum and comprises at least: an elastomer substrate, a texturizing layer disposed on top of the substrate, and an optional reflective coating disposed on top of the texturizing layer. In operation, the stretching and relaxation of the elastomer substrate causes changes in the surface morphology of the texturized layers (e.g., the change in the size and depth of surface features in the texturizing layer), this in turn results in the increased or decreased transmittivity, reflectivity, and/or absorptivity of the active area. 1. A spectrally adaptive composite material comprising: an elastically deformable substrate transparent in at least the portion of the electromagnetic spectrum and having an unrelaxed state wherein the elastically deformable substrate is elastically deformed beyond a relaxed state, and', 'a texturizing layer disposed on a first side of the elastically deformable substrate, wherein the texturizing layer is transparent in at least the portion of the electromagnetic spectrum;, 'at least one size-variable active area having a variable transmittance, reflectance, and/or absorptance in at least a portion of the electromagnetic spectrum comprisingwherein at least when the elastically deformable substrate is in the relaxed state the texturizing layer forms a plurality of geometrically reconfigurable microstructures with ...

TOUCH PANEL, METHOD OF MANUFACTURING TOUCH PANEL, AND OPTICAL THIN FILM

A touch panel of the present invention includes a touch panel substrate, a cover substrate provided to overlap the touch panel, and a connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and is provided between the touch panel substrate and the cover substrate in an area other than a display area. 1. A touch panel comprising:a touch panel substrate;a cover substrate provided to overlap the touch panel substrate; anda connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and being provided between the touch panel substrate and the cover substrate in an area other than a display area.2. The touch panel according to claim 1 , wherein the scattering layer is formed from a multilayered structure in which a first dielectric layer and a second dielectric layer are alternately laminated.3. The touch panel according to claim 2 , wherein a film thickness of each of the first dielectric layer and the second dielectric layer is equal to or less than 10 nm.4. The touch panel according to claim 2 , wherein in the multilayered structure of the scattering layer claim 2 , the number of dielectric laminates formed of the first dielectric layer and the second dielectric layer is equal to or more than 50.5. The touch panel according to claim 1 , wherein the connection part includes the scattering layer and a reflection layer formed to cover the scattering layer.6. A method for manufacturing a touch panel that has a touch panel substrate claim 1 , a cover substrate provided to overlap the touch panel substrate claim 1 , and a connection part that includes a scattering layer provided between the touch panel substrate and the cover substrate in an area other than a display area claim 1 , the method comprising:a process of forming the scattering layer formed from a multilayered structure in which a first dielectric layer and a second dielectric layer ...

METHOD FOR MAKING A PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK USING GLANCING ANGLE DEPOSITION OF HARD MASK MATERIAL

A method for making a bit-patterned media (BPM) magnetic recording disk by etching the recording layer using a patterned hard mask layer uses glancing angle deposition (GLAD) of additional hard mask material as a capping layer onto the tops of the patterned hard mask pillars while the disk is rotated about an axis orthogonal to the plane of the disk. In one embodiment the capping layer is deposited after the pillars have been only partially eroded during a partial ion-milling of the recording layer. Ion-milling is then again performed to remove the remaining recording layer material. In another embodiment, before ion-milling of the recording layer, the capping layer is deposited onto the tops of the un-eroded hard mask pillars. This increases the lateral dimension of the hard mask pillars so that after ion-milling of the recording layer, the magnetic islands have an increased lateral dimension. 1. A method for forming a patterned magnetic recording layer on a perpendicular magnetic recording disk comprising:providing a disk substrate having a perpendicular magnetic recording layer with a hard mask layer formed on the recording layer;patterning the hard mask layer into a plurality of pillars with trenches of exposed recording layer between the pillars;forming on the tops of the hard mask pillars a capping layer by depositing capping layer material at an oblique angle to the substrate while rotating the substrate about an axis orthogonal to the plane of the substrate; andion-milling the exposed recording layer, using the capped hard mask pillars as an etch mask.2. The method of wherein the step of ion-milling is a first ion-milling step performed after patterning the hard mask layer and before forming the capping layer and comprises ion-milling to remove only a portion of the exposed recording layer; and further comprising claim 1 , after forming the capping layer claim 1 , performing a second ion-milling step to remove all of the remaining exposed recording layer to ...

Ion beam etch without need for wafer tilt or rotation

Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.

Fixture assembly for coating combustor panels

A fixture assembly for supporting workpieces in a coating process includes a shaft; and a plurality of fixtures each having a workpiece support surface and a shaft mount defining a shaft mounting structure, wherein the shaft mounting structure extends from the workpiece support surface such that, when the shaft mounting structure is engaged with the shaft, workpiece support surfaces of the fixtures are positioned facing radially outwardly away from the shaft.

METHODS FOR CONTROLLING PHYSICAL VAPOR DEPOSITION METAL FILM ADHESION TO SUBSTRATES AND SURFACES

A method of depositing of a film on a substrate with controlled adhesion. The method comprises depositing the film including metal, wherein the metal is deposited on the substrate using physical vapor deposition at a pressure that achieves a pre-determined adhesion of the film to the substrate. The pre-determined adhesion allows processing of the film into a device while the film is adhered to the substrate but also allows removal of the device from the substrate. 1. A method of making a plurality of devices , comprising:fabricating, on a substrate, a film comprising a plurality of devices including a metal layer in direct contact the substrate;defining the plurality of devices in the film; andremoving each of the devices from the substrate, so that the metal layer in each of the devices is removed from the substrate and each of the devices include a portion of the metal layer.2. The method of claim 1 , wherein the fabricating comprises adhering the metal layer to the substrate.3. The method of claim 1 , wherein the metal comprises a layer having a thickness of at least 100 Å.4. The method of claim 1 , wherein the metal layer comprises a thickness in a range of 600-1500 Å.5. The method of claim 1 , wherein the devices each comprise a circuit and the electrode having an electrochemically active surface.6. The method of claim 1 , wherein devices each comprise an analyte sensor and the portion of the metal layer comprises an electrode used for sensing a concentration of an analyte in an in-vivo environment in contact with the electrode.7. The method of claim 6 , wherein the analyte comprises glucose and the analyte sensor is a glucose sensor.8. The method of claim 6 , wherein the electrode comprises a counter electrode.9. The method of claim 1 , wherein the device comprises a microelectromechanical device structure claim 1 , an optoelectronic device structure claim 1 , a circuit claim 1 , a battery electrode claim 1 , a fuel cell electrode claim 1 , or an electrode ...

CHEMICALLY PURE ZERO-VALENT IRON NANOFILMS FROM A LOW-PURITY IRON SOURCE

Methods of forming chemically pure metal films are provided. The methods use electron beam deposition at a high mean deposition rate to form high purity metal films on deposition substrates. By using a high mean deposition rate, the melting point of the metal to be deposited is reached at the metal source surface during the deposition. As a result, the rate of transfer of impurities present in the metal source to the surface of the deposition substrate is so small that the deposited metal films are substantially free of impurity elements. 1. A method of forming an iron film on a deposition substrate , the method comprising:directing an electron beam onto the surface of an iron source comprising 99.98 atomic percent, or less, of iron; the remainder of the iron source comprising impurity elements having boiling points lower than that of the iron at the deposition conditions;wherein the electron beam heats the surface of the iron source to a temperature above its melting point, such that at least a portion of the surface of the iron source melts and iron and impurities from the melted iron source evaporate into the gas phase and then deposit as a solid film on a surface of the deposition substrate; andfurther wherein the temperature to which the iron source is heated by the electron beam is high enough that the concentration of the impurities in the gas phase is the same as, or lower than, the concentration of the impurities in the iron source, so that the solid film deposited on the deposition substrate has an impurity concentration that is the same as, or lower than, that of the iron source.2. The method of claim 1 , wherein the temperature to which the iron source is heated by the electron beam is high enough that the concentration of the impurities in the gas phase is lower than the concentration of the impurities in the iron source claim 1 , so that the solid film deposited on the deposition substrate has an impurity concentration that is lower than that of the ...

HIGH CONDUCTANCE PROCESS KIT

Exemplary semiconductor processing chambers may include showerhead. The chambers may include a pedestal configured to support a semiconductor substrate, where the showerhead and pedestal at least partially define a processing region within the semiconductor chamber. The chamber may include a spacer characterized by a first surface in contact with the showerhead and a second surface opposite the first surface. The chamber may include a pumping liner characterized by a first surface in contact with the spacer and a second surface opposite the first surface. The pumping liner may define a plurality of apertures within the first surface of the pumping liner. 1. A semiconductor processing chamber , comprising:a showerhead;a pedestal configured to support a semiconductor substrate, wherein the showerhead and pedestal at least partially define a processing region within the semiconductor processing chamber;a spacer characterized by a first surface in contact with the showerhead and a second surface opposite the first surface; anda pumping liner characterized by a first surface in contact with the spacer, and a second surface opposite the first surface, wherein the pumping liner defines a plurality of apertures within the first surface of the pumping liner.2. The semiconductor processing chamber of claim 1 , wherein the spacer comprises an annulus claim 1 , and wherein an inner annular sidewall of the spacer extending between the first surface of the spacer and the second surface of the spacer at least partially defines the processing region.3. The semiconductor processing chamber of claim 2 , wherein the inner annular sidewall of the spacer is at least partially characterized by an arcuate profile extending away from the processing region in a direction towards the second surface of the spacer.4. The semiconductor processing chamber of claim 3 , wherein the inner annular sidewall of the spacer at the second surface of the spacer is positioned radially outward of the ...

SINGLE-CRYSTALLINE METAL FILMS

According to an example of the present invention, a physical vapour deposition method comprises depositing a metal seed layer on a substrate, wherein the seed layer being deposited under a first temperature of between 20% and 90% of a melting temperature of the metal, and depositing more of the metal on the seed layer at a second temperature, lower than the first temperature, until a continuous single-crystalline film of the metal is complete and has a thickness of 10-2000 nanometres. 1. A physical vapour deposition method comprising:depositing a metal seed layer of a metal on a substrate, wherein the seed layer is deposited under a first temperature of between 20% and 90% of a melting temperature of the metal, anddepositing more of the metal on the seed layer at a second temperature lower than the first temperature, until a continuous single-crystalline film of the metal is complete, the film having a thickness of 10-2000 nanometres.2. The method according to claim 1 , wherein the seed layer is non-continuous.3. The method according to claim 2 , wherein the seed layer comprises flat islands of the metal.4. The method according to claim 1 , wherein the substrate comprises at least one of the following: silicon claim 1 , sapphire claim 1 , diamond claim 1 , magnesium oxide claim 1 , sodium chloride claim 1 , gallium arsenide claim 1 , gallium nitride claim 1 , indium arsenide claim 1 , gallium antimonide claim 1 , indium antimonide claim 1 , germanium claim 1 , cadmium-zinc-telluride or a mica substrate.5. The method according to claim 1 , further comprising annealing the continuous single-crystalline film to reduce a density of defects and to improve a film crystalline structure and surface roughness.6. The method according to claim 1 , wherein the method is performed under vacuum conditions between 1×10Torr and 1×10Torr.7. The method according to claim 1 , wherein the seed layer is deposited in Frank-van-der-Merwe growth mode.8. The method according to claim 1 , ...

CONTROL OF ION ANGULAR DISTRIBUTION OF ION BEAMS WITH HIDDEN DEFLECTION ELECTRODE

A processing apparatus may include: an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first and second aperture, and middle portion between the first and second aperture, the first and second aperture being configured to define a first and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate; a hidden deflection electrode disposed adjacent the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; and a hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify a mean angle of incidence of ions and/or a range of angles of incidence centered around the mean angle of incidence in the first and second ion beam. 1. A plasma processing apparatus comprising:an extraction plate disposed along a side of a plasma chamber, the extraction plate having a first aperture and a second aperture, and a middle portion between the first aperture and second aperture, the first aperture and second aperture being configured to define a first ion beam and second ion beam when the plasma is present in the plasma chamber and an extraction voltage is applied between the extraction plate and a substrate;a hidden deflection electrode disposed adjacent to the middle portion outside of the plasma chamber, and electrically isolated from the extraction plate; anda hidden deflection electrode power supply to apply a bias voltage to the hidden deflection electrode, wherein the bias voltage is configured to modify at least one of a mean angle of incidence of ions and a range of angles of incidence centered around the mean angle of incidence in the first ion beam and the second ion beam.2. The processing apparatus of claim 1 , wherein the extraction plate forms a first plasma meniscus and a second plasma meniscus from which the first ...

METHOD OF SMOOTHING SOLID SURFACE WITH GAS CLUSTER ION BEAM AND SOLID SURFACE SMOOTHING APPARATUS

A solid surface smoothing apparatus for smoothing a solid surface with a gas cluster ion beam includes a plurality of gas cluster ion beam emitters, each emitter having an irradiation axis and emitting a respective gas cluster ion beam along its irradiation axis onto the solid surface, wherein irradiation axes of the plurality of the gas cluster ion beam emitters are not parallel to each other so as to expose substances in the solid surface transferred laterally by collisions with gas clusters to collisions with other gas clusters so that the substances do not remain on the solid surface. 1a plurality of gas cluster ion beam emitters, each emitter having an irradiation axis and emitting a respective gas cluster ion beam along its irradiation axis onto the solid surface,wherein irradiation axes of the plurality of the gas cluster ion beam emitters are not parallel to each other so as to expose substances in the solid surface transferred laterally by collisions with gas clusters to collisions with other gas clusters so that the substances do not remain on the solid surface.. A solid surface smoothing apparatus for smoothing a solid surface with a gas cluster ion beam, comprising: The present application is a divisional application of co-pending U.S. application Ser. No. 14/136,329, filed Dec. 20, 2013, which is a divisional application of U.S. application Ser. No. 12/312,265, filed Oct. 21, 2009, now abandoned, which is a U.S. National Stage Application of International Application No. PCT/JP2007/071102, filed Oct. 30, 2007, all the contents of which are expressly incorporated by reference herein in their entirety.The present invention relates to solid surface smoothing methods using gas cluster ion beam irradiation and to apparatuses therefor.A variety of gas-phase reaction methods have been developed for the purpose of smoothing surfaces of electronic devices and the like and have been put to practical use. For example, a substrate surface smoothing method disclosed ...

Detaching Probe from TEM Sample during Sample Preparation

An improved method of preparing a TEM sample. A sample is extracted from a work piece and attached to a probe for transport to a sample holder. The sample is attached to the sample holder using charged particle beam deposition, and mechanically separated from probe by moving the probe and the sample holder relative to each other, without severing the connection using a charged particle beam. 1. A method of preparing a sample for TEM analysis , the method comprising: separating a sample from the substrate by ion beam milling;', 'attaching the sample to a probe;', 'transporting the sample to a sample holder;', 'attaching the sample to the sample holder using charged particle beam induced deposition;', 'separating the probe from the sample holder by moving the probe or sample relative to each other without cutting the sample from the probe before moving., 'loading a substrate into an ion beam system;'}2. The method of in which attaching the sample to the sample holder includes attaching the sample to the sample holder using ion-beam induced deposition.3. The method of in which separating the probe from the sample holder by moving the probe or sample relative to each other includes separating the probe from the sample holder by moving the probe.4. The method of in which separating the probe from the sample holder by moving the probe or sample relative to each other includes separating the probe from the sample holder by moving the sample holder.5. The method of in which attaching the sample to the sample holder includes attaching the sample to a toothed claim 1 , 3 mm TEM sample holder.6. The method of in which separating a sample from the substrate by ion beam milling includes separating a lamella.7. The method of in which separating a sample from the substrate by ion beam milling includes separating a chunk.8. The method of in which separating a sample from the substrate by ion beam milling includes separating planar view sample.9. The method of in which separating a ...

Sapphire thin film coated substrate

A method to deposit a layer of harder thin film substrate onto a softer substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer substrate e.g. quartz, fused silica, silicon and (toughen) glass. This combination is better than pure sapphire substrate. 1. A method for coating sapphire on to substrate comprising ,at least one deposition process, wherein sapphire is deposited on to at least one substrate to form a sapphire coated substrate; andat least one anneal process, wherein said sapphire coated substrate is annealed under an annealing temperature ranging between 500° C. and 2040° C. for an effective duration of time.2. The method according to claim 1 , wherein said at least one substrate comprises at least one material with a Mohs value less than that of said sapphire.3. The method according to claim 1 , wherein said at least one deposition process comprises e-beam deposition or sputtering deposition.4. The method according to claim 1 , wherein said sapphire is deposited on to said at least one substrate to form at least one sapphire thin film.5. The method according to claim 4 , wherein a thickness of said at least one substrate is of one or more orders of magnitude greater than a thickness of said at least one sapphire thin film.6. The method according to claim 4 , wherein a thickness of said at least one sapphire thin film is about 1/1000 of a thickness of said at least one substrate.7. The method according to claim 5 , wherein said at least one sapphire thin film has the thickness between 150 nm and 600 nm.8. The method according to claim 5 , wherein said at least one sapphire thin film has the thickness between 150 nm and 300 nm.9. The method according to claim 1 , wherein said effective duration of time is no less than 30 minutes.10. The method according to claim 1 , wherein said effective duration of time is no more than 2 hours.11. The method according to claim 1 , wherein said annealing ...

Coated Articles and Manufacture Methods

An article ( 50; 100 ) has a metallic substrate ( 22 ), a bondcoat ( 30 ) atop the substrate, and a thermal barrier coating ( 28; 27, 28 ) atop the bondcoat. The thermal barrier coating or a layer thereof comprises didymium oxide and zirconia.

Deposition Apparatus and Deposition Method Using the Same

The present invention provides a deposition apparatus and deposition method using the same. The deposition apparatus comprises: a process chamber, wherein a work piece is disposed therein; a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma with ions bombard the work piece; and a second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical, the second plasma having radical deposits a surface of the work piece. 1. A deposition apparatus , comprising:a process chamber, wherein a work piece is disposed therein;a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma bombard the work piece; anda second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical to deposit a surface of the work piece.2. The deposition apparatus of claim 1 , wherein the ions of the first plasma pass through the second plasma generator.3. The deposition apparatus of claim 1 , wherein the process chamber comprises an gas inlet to access a third gas into the process chamber claim 1 , wherein the second gas comprises the ions of the first plasma and the third gas.4. The deposition apparatus of claim 3 , wherein the third gas comprises atoms to be deposited on the surface of the work piece.5. The deposition apparatus of claim 3 , wherein the first gas and the third gas comprise atoms to be deposited on the surface of the work piece.6. The deposition apparatus of claim 1 , wherein the first plasma generator ...

EBPVD Columnated Vapor Stream

An electron beam vapor deposition process for depositing coatings includes placing a source coating material in a crucible of a vapor deposition apparatus; energizing the source coating with an electron beam raster pattern that delivers a controlled power density to the material in the crucible forming a vapor cloud from the source coating material; and depositing the source coating material onto a surface of a work piece.

METHOD FOR PRODUCING A STEEL COMPONENT WHICH IS SHAPED BY HOT-FORMING A STEEL SHEET WHICH HAS A METAL COATING, SUCH A STEEL SHEET, AND A STEEL COMPONENT PRODUCED FROM SAID STEEL SHEET BY MEANS OF A HOT-FORMING PROCESS

A process for producing a three-dimensionally shaped steel component from a steel sheet with a metallic coating may involve hot forming the steel sheet into the steel component. The metallic coating may involve an Fe—Al-based alloy. To protect the steel sheet or the steel component against scale formation, the Fe—Al-based alloy may be applied directly to the steel sheet by galvanic coating and/or physical vapor deposition. The coating produced in this way may contain 30-60% by weight Fe, a balance of Al, and, in some cases, 0.1-10% by weight Mg, 0.1-5% by weight Ti, 0.1-10% by weight Si, 0.1-10% by weight Li, and/or 0.1-10% by weight Ca. Before heating the coated steel sheet as part of the hot forming process, the coated steel sheet may have an Fe—Al phase is stable to above 900° C.” 112.-. (canceled)13. A process for producing a three-dimensionally shaped steel component from a steel sheet , the process comprising: 30-60% by weight Fe, and', 'a balance of Al; and, 'applying a metallic coating comprising an Fe—Al based alloy directly to a steel sheet by at least one of galvanic coating or physical vapor deposition, wherein the metallic coating applied in this way includes'}hot forming the steel sheet into a steel component,wherein prior to heating the steel sheet as part of the hot forming, the steel sheet has an Fe—Al phase that is stable to above 900° C.14. The process of wherein the metallic coating further includes0.1-10% by weight Mg;0.1-5% by weight Ti;0.1-10% by weight Si;0.1-10% by weight Li; and0.1-10% by weight Ca.15. The process of wherein the metallic coating further includes at least one of0.1-10% by weight Mg;0.1-5% by weight Ti;0.1-10% by weight Si;0.1-10% by weight Li; or0.1-10% by weight Ca.16. The process of wherein the Fe—Al based alloy includes at least 28% by weight Al.17. The process of wherein the Fe—Al based alloy includes at least 38% by weight Al.18. The process of wherein the Fe—Al based alloy includes at least one of 0.1-10% by weight Mg ...

LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF THE RADIATED ENERGY AND OF THE GEOMETRY APPLICABLE TO COMPLEX SHAPES

A method of generating data relative to the writing of a pattern by electronic radiation initially includes the provision of a pattern to be formed which form the work pattern with a single external envelope. The work pattern is broken down into a set of elementary outlines, each including a single external envelope. A set of insolation conditions is defined to model each elementary outline. An irradiated simulation pattern is calculated from the sets of insolation conditions associated with the sets of elementary outlines. The simulation pattern is compared with the pattern to be formed. If the simulation pattern is not representative of the pattern to be formed, shift vectors are calculated. The shift vectors are representative of different intervals existing between the two patterns. The external envelope of the pattern to be formed is modified from displacement vectors determined from the shift vectors. A new iteration is carried out. 1. Method of generating data relative to the writing of a pattern by electronic radiation , successively comprises:{'b': '1', 'S) providing a pattern to be formed on a substrate,'}{'b': '2', 'S) forming a work pattern from the pattern to be formed, the work pattern comprising a single external envelope,'}{'b': '3', 'S) breaking down the work pattern into a set of elementary outlines comprising a plurality of elementary outlines each having a single external envelope, and defining a set of insolation conditions for each elementary outlines,'}{'b': '4', 'S) comparing the pattern to be formed with a simulation pattern representing the sets of insolation conditions for the elementary outlines to discriminate a simulation pattern representative of the pattern to be formed from a simulation pattern which is not representative of the pattern to be formed,'}wherein, if the simulation pattern is not representative of the pattern to be formed, the method comprises:{'b': '7', 'S) determining at least one shift vector between at least a ...

Angle Control For Radicals And Reactive Neutral Ion Beams

A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ions pass. Plasma sheath modulation and electric fields may be used to determine the extraction angle of the charged ions. The extraction plate also includes one or more neutral species channels, separate from the extraction aperture, through which reactive neutrals are passed at a selected extraction angle. The geometric configuration of the neutral species channels determines the extraction angle of the reactive neutrals. The neutral species channel may also comprise a suppressor, to reduce the number of charged ions that pass through the neutral species channel. The apparatus may be used for various applications, such as directed reactive ion etching.

CATALYST ELECTRODES AND METHOD OF MAKING IT

Fuel cell anodes comprising (a) a catalyst comprising Pt, (b) an oxygen evolution reaction catalyst, and (c) at least one of Au, a refractory metal (e.g., at least one of Hf, Nb, Os, Re, Rh, Ta, Ti, W, or Zr), a refractory metal oxide, a refractory metal boride, a refractory metal carbide, a refractory metal nitride, or a refractory metal silicide. The fuel cell anodes are useful in fuel cells. 1. A hydrogen fuel cell anode comprising:a catalyst comprising Pt, the catalyst having surface area;an oxygen evolution reaction catalyst on a portion of the surface area of the catalyst comprising Pt; andat least one of Au, a refractory metal, a refractory metal boride, a refractory metal carbide, a refractory metal nitride, or a refractory metal silicide on a portion of the surface area of the catalyst comprising Pt, wherein the refractory is one of a refractory metal, a refractory metal boride, a refractory metal carbide, a refractory metal nitride, or a refractory metal silicide is independently selected from the group consisting of Hf, Nb, Os, Re, Rh, Ta, Ti, W, Zr, and combinations thereof,wherein a portion of the surface area of the catalyst comprising Pt is not covered by either the oxygen evolution reaction catalyst or collectively the Au, the refractory metal, refractory metal boride, refractory metal carbide, refractory metal nitride, and refractory metal silicide to the extent present.2. (canceled)3. The hydrogen fuel cell anode of claim 1 , wherein Pt present in the catalyst comprising Pt is present as at least one of metallic Pt or Pt compound claim 1 , and wherein the catalyst comprising Pt further comprises at least one of Ir claim 1 , Ru claim 1 , or Pd.4. The hydrogen fuel cell of claim 1 , wherein at least some of the least one of Ir claim 1 , Ru claim 1 , or Pd is present in at least one organometallic compound claim 1 , and wherein at least some of the least one of Ir claim 1 , Ru claim 1 , or Pd is present in at least one organometallic complex.5. The ...

In Situ Density Control During Fabrication Of Thin Film Materials

A system and method for forming a thin film device. A method may comprise depositing a layer of material on a substrate with a thin film system at a deposition rate, monitoring a density of the layer of material to control the deposition rate, selecting a threshold for the deposition rate for a consistent film density, wherein the threshold is a material density, decreasing the deposition rate when the deposition rate is higher than the threshold, and increasing the deposition rate when the deposition rate is lower than the threshold. A thin film system for fabricating a thin film device may comprise a chamber, a material source contained with the chamber, an electrical component to activate the material source, a substrate holder to support a multilayer stack of materials that form the thin film device, a measurement device, and an information handling system. 1. A method of forming a thin film device comprising:depositing a layer of material on a substrate with a thin film system at a deposition rate;monitoring a density of the layer of material in-situ with X-ray reflectivity to control the deposition rate;selecting a threshold for the deposition rate for a consistent film density, wherein the threshold is a material density;decreasing the deposition rate when the deposition rate is higher than the threshold; andincreasing the deposition rate when the deposition rate is lower than the threshold.2. The method of claim 1 , wherein monitoring the density is performed in-situ.3. (canceled)4. (canceled)5. The method of claim 1 , wherein the threshold is an optical thickness of the layer of material.6. The method of claim 1 , wherein the threshold is an optical property of the material.7. The method of claim 1 , further comprising adjusting the thin film system by changing an E-beam current.8. The method of claim 1 , further comprising adjusting the thin film system by changing an ion-source current.9. The method of claim 1 , further comprising adjusting the thin film ...

Customized Thin Film Optical Element Fabrication System and Method

A system comprising (i) thin film optical element comprising substrate and thin film stack (≥2 film layers; uniform thickness—variation of less than ±5% in any 10 mmstack) deposited on substrate's first side; (ii) holder comprising at least one opening; wherein holder has inner side and outer side having beveled edge extending into lip having flat side and beveled edge side; wherein beveled edge/beveled edge side of lip form angle <45° with flat side of lip/first side; wherein flat side of lip and holder inner side define socket receiving substrate; wherein opening exposes first side to deposition plume; wherein first side contacts flat side of lip, thereby allowing film stack deposition on first side; wherein beveled edge side/beveled edge provide film uniformity, and (iii) deposition source providing plume traveling towards first side perpendicular to flat side of lip/first deposition side; and wherein beveled edge side faces plume. 1. A system for making a thin film optical element comprising:{'sup': '2', '(i) a thin film optical element comprising a substrate and a first thin film stack, wherein the first thin film stack is deposited on a first deposition side of the substrate; wherein the first thin film stack comprises two or more film layers; wherein the first thin film stack is characterized by a first uniform film thickness; and wherein the first uniform film thickness is defined as a thickness variation of less than about ±5% in any 10 mmof the first thin film stack, when compared to an average first thin film stack thickness across the entire first thin film stack;'}(ii) a holder comprising at least one holder opening; wherein the holder has a holder outer side and a holder inner side; wherein the holder outer side has at least one beveled edge extending into a lip; wherein the beveled edge and the lip define the at least one holder opening; wherein the lip has a substantially flat side and a beveled edge side; wherein the beveled edge and/or the beveled ...

SEMICONDUCTOR LASERS AND PROCESSES FOR THE PLANARIZATION OF SEMICONDUCTOR LASERS

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide. 1. A laser structure , comprising:a substrate;an active region arranged on the substrate;a waveguide arranged on the active region, the waveguide including a first surface and a second surface that join to form a first angle relative to the active region; anda material deposited on the first surface and the second surface of the waveguide.2. The laser structure of claim 1 , wherein the first angle is less than ninety degrees.3. The laser structure of claim 1 , wherein the waveguide further includes a third surface and a fourth surface that join to form a second angle relative to the active region claim 1 , and the material is deposited on the third surface and the fourth surface.4. The laser structure of claim 3 , wherein the second angle is less than ninety degrees.5. The laser structure of claim 1 , wherein the material is one of MgO claim 1 , MgF claim 1 , SiO claim 1 , or SiN.6. The laser structure of claim 1 , wherein the material has a dielectric constant below 10 in a frequency range up to 50 GHz.7. The laser structure of claim 1 , wherein the material is non-conducting.8. The laser structure of claim 1 , wherein the waveguide includes a fifth surface arranged between the first surface and the third surface claim 1 , and the laser structure further comprises:a first contact arranged on the fifth surface; anda second contact arranged on the substrate,wherein the first contact is configured to bias the laser structure by delivering electrical current to the laser structure.9. The laser structure of claim 1 , further comprising at least one facet.10. The laser structure of claim 9 , wherein the at least one facet is ...

FORMING A VERTICAL SURFACE

A miller, a non-transitory computer readable medium, and a method. The miller may include an ion beam column that may be configured to form a vertical surface in an object by applying a milling process that may include forming a vertical surface by irradiating, for a certain period of time, an area of an upper surface of an object by a defocused ion beam that comprises multiple rays. During the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam. The focal plane of the defocused ion beam is located below the upper surface of the object. 1. A miller that comprises:a controller; andan ion beam column;wherein the controller is configured to receive or determine milling parameters related to a milling process;wherein the ion beam column is configured to form a vertical surface in an object by applying the milling process while maintaining the milling parameters; wherein the applying of the milling process comprises forming the vertical surface by irradiating, for a certain period of time, an area of an upper surface of the object by a defocused ion beam that comprises multiple rays, wherein during the certain period of time and at a plane of the upper surface of the object, a majority of the multiple rays are closer to an edge of the defocused ion beam than to a center of the defocused ion beam; andwherein a focal plane of the defocused ion beam is located below the upper surface of the object.2. The miller according to wherein a region of least confusion of the defocused ion beam coincides with the plane of the upper surface of the object.3. The miller according to wherein the upper surface of the object is closer to the region of least confusion of the defocused ion beam than to the focal plane of the defocused ion beam.4. The miller according to wherein the irradiating of the area is executed without moving the defocused ion ...

Method of applying a thermal barrier coating to a metallic article and a thermal barrier coated metallic article

A thermal barrier coated metallic article includes a platinum-group metal enriched outer layer on the article. The surface of the outer layer has a microstructure including a plurality of projections extending away from the metallic article. A thin adherent layer of oxide is formed on the outer layer of the metallic article. A ceramic coating is provided on the oxide layer on the surface on and around the projections. The ceramic coating includes a plurality of columnar ceramic grains which extend through the full thickness of the ceramic coating. The grains are arranged in clusters separated by gaps. The grains deposited around the projections are generally blocked. The projections reduce the stress in the ceramic coating near the interface with the adherent layer of oxide and also reduce the stress in the adherent layer of oxide and hence increase the working life of the thermal barrier coating system.

FLUORESCENCE LIGHT SOURCE APPARATUS

The present invention has as its object the provision of a fluorescence light source apparatus which has high reliability without a drop in reflectance over a long period of time. The fluorescence light source apparatus of the present invention includes a fluorescent plate that emits fluorescence under excitation light and has a front surface serving as an excitation light incident surface, a reflection layer that is disposed on a back surface side of the fluorescent plate, and a heat dissipation substrate, wherein a sealing layer covering a back surface and a peripheral side surface of the reflection layer is provided in close contact with a peripheral area of the back surface of the fluorescent plate via an adhesion layer, and a diffusion prevention layer formed by nickel plating is provided on the heat dissipation substrate via a bonding member layer. 1. A fluorescence light source apparatus comprising: a fluorescent plate that emits fluorescence under excitation light and has a front surface serving as an excitation light incident surface; a reflection layer that is disposed on a back surface side of the fluorescent plate; and a heat dissipation substrate , whereina sealing layer covering a back surface and a peripheral side surface of the reflection layer is provided in close contact with a peripheral area of the back surface of the fluorescent plate via an adhesion layer, anda diffusion prevention layer formed by nickel plating is provided on the heat dissipation substrate via a bonding member layer.2. The fluorescence light source apparatus according to claim 1 , wherein the diffusion prevention layer has a thickness of not smaller than 1 μm and not greater than 3 μm.3. The fluorescence light source apparatus according to claim 1 , wherein the diffusion prevention layer is a plating layer formed by using a nickel sulfamate plating bath.4. The fluorescence light source apparatus according to claim 1 , wherein a stress relaxation layer is provided between the ...

COATED CUTTING TOOL

A coated cutting tool comprising a substrate and a coating layer formed on the substrate, wherein: the coating layer includes a first composite nitride layer containing a compound having a composition represented by (AlCr)N, and a second composite nitride layer containing a compound having a composition represented by (AlCr)N; an average particle size of particles which constitute of the first composite nitride layer is less than 100 nm; the second composite nitride layer comprises a cubic crystal system, and a ratio I(111)/I(200) of a peak intensity I(111) for a (111) plane to a peak intensity I(200) for a (200) plane in the second composite nitride layer is 1.0 or more; an average particle size of particles which constitute of the second composite nitride layer is 100 nm or more; and a residual stress of the second composite nitride layer is from −10.0 GPa or higher to −2.0 GPa or lower. 2. The coated cutting tool according to claim 1 , wherein an average thickness of the first composite nitride layer is from 0.1 μm or more to 1.0 μm or less.3. The coated cutting tool according to claim 1 , wherein an average thickness of the second composite nitride layer is from 0.5 μm or more to 5.0 μm or less.4. The coated cutting tool according to claim 1 , wherein particles which constitute of the second composite nitride layer comprise columnar crystals with an aspect ratio of 2.0 or more.5. The coated cutting tool according to claim 1 , wherein the coating layer has an alternating laminate structure in which the first composite nitride layer and the second composite nitride layer are repeatedly formed twice or more in an alternating manner.6. The coated cutting tool according to claim 1 , wherein an average thickness of the entire coating layer is from 1.0 μm or more to 6.0 μm or less.7. The coated cutting tool according to claim 1 , wherein the substrate is a cemented carbide claim 1 , cermet claim 1 , ceramic or a cubic boron nitride sintered body.8. The coated cutting ...

DEPOSITIVE SHIELDING FOR FIDUCIAL PROTECTION FROM REDEPOSITION

Redeposition of substrate material on a fiducial resulting from charged particle beam (CPB) or laser beam milling of a substrate can be reduced with a shield formed on the substrate surface. The shield typically has a suitable height that can be selected based on proximity of an area to be milled to the fiducial. The shield can be formed with the milling beam using beam-assisted chemical vapor deposition (CVD). The same or different beams can be used for milling and beam-assisted CVD. 1. A method , comprising:selecting an area of a substrate that includes a fiducial;forming a shield proximate the fiducial; andprocessing the substrate in a selected area situated so that shield is between the fiducial and the selected area.2. The method of claim 1 , wherein the shield is formed with ion beam assisted chemical vapor deposition (CVD) claim 1 , electron beam assisted CVD claim 1 , or laser beam assisted CVD.3. The method of claim 2 , wherein the shield is formed of one or more of tungsten claim 2 , carbon claim 2 , or platinum.4. The method of claim 1 , wherein the shield extends in a U-shape about the fiducial.5. The method of claim 1 , wherein the shield extends along a line.6. The method of claim 1 , wherein the substrate is processed in the selected area by charged particle beam (CPB) milling.7. The method of claim 6 , wherein a height of the shield is at least one-quarter of a distance from the shield to a distal fiducial alignment feature.8. The method of claim 7 , wherein the height of the shield is at least one-half of a distance from the shield to the distal fiducial alignment feature.9. The method of claim 8 , wherein the height of the shield is at least the distance from the shield to the distal fiducial alignment feature.10. The method of claim 8 , wherein the selected area of the substrate processed with CPB milling is situated less than the distance from the shield to the distal fiducial alignment feature.11. The method of claim 1 , wherein a height of the ...

Method and Apparatus to Eliminate Contaminant Particles from an Accelerated Neutral Atom Beam and Thereby Protect a Beam Target

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target. 1. In the method of ANAB processing of target substrate surfaces , the improvement comprising providing a contaminant particle elimination step in an ANAB process of deriving a neutral beam comprising energetic monomers from a GCIB , which has been subjected to a primary (first) ionization step and accelerated under conditions subject to entraining contaminant particles in the neutral beam and providing an assembly for deflecting or blocking contaminant particles therein , if any , such that no paths of the neutral beam to the target substrate surface to be processed exist other than through the assembly.2. The improved method of wherein the step of deflecting or blocking includes a secondary electron ionization step which is implemented without detrimentally influencing the primary ionization by employing positive offset voltages and a surrounding ground screen to prevent electrons from escaping.3. The improved method of wherein a retarding field is employed in the assembly to block ionized particles from travelling to the target substrate surface.4. The improved method of wherein an electrostatic deflector is employed in the assembly to remove ionized particles from the path to the target substrate surface.5. A method of processing a substrate target surface for one or more of etching claim 1 , smoothing planarization or other modification of the substrate target surface claim 1 , comprising the steps of:(a) forming gas cluster ions by a primary (first) ionization step in a reduced pressure ambient in a chamber,(b) accelerating the gas cluster ions to form an accelerated gas cluster ion beam (GCIB) along a beam path ...

Method for structuring an object with the aid of a particle beam apparatus

Methods for structuring objects with a particle beam apparatus are disclosed.

METHOD AND DEVICE FOR A CARRIER PROXIMITY MASK

A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate. 1. A carrier proximity mask , comprising:a first carrier body, the first carrier body having one or more openings, the one or more openings formed as proximity masks to form structures on a first side of a substrate, the first carrier body having one or more contact areas, the contact areas to align with one or more contact areas on the first side of the substrate;a second carrier body having one or more contact areas, the contact areas to align with one or more contact areas on a second side of the substrate; anda set of one or more clamps to clamp the first carrier body with the second carrier body;the one or more contact areas of the first carrier body and the one or more contact areas of the second carrier body to contact opposite sides of the substrate to suspend a work area of the first side of the substrate and a work area of the second side of the substrate between the first carrier body and the second carrier body.2. The carrier proximity mask of claim 1 , wherein the one or more contact areas of the first carrier body comprise contact areas to align with exclusion areas of the first side of the substrate and the one or more contact areas of the second carrier body comprise contact areas to align with ...

METHOD OF REDUCING THE THICKNESS OF A TARGET SAMPLE

A method is provided of reducing the thickness of a region of a target sample. Reference data is obtained that is representative of x-rays generated by a particle beam being directed upon part of a reference sample under a first set of beam conditions. Under a second set of beam conditions the particle beam is directed upon the region of the target sample. The resultant x-rays are monitored as monitored data. Output data are then calculated based upon the reference and the monitored data. Material is then removed from the region, so as to reduce its thickness, in accordance with the output data. 1. A method of reducing the thickness of a region of a target sample , comprising:a) obtaining reference data that is representative of x-rays generated by the interaction of a particle beam with part of a reference sample under a first set of beam conditions, wherein the reference sample has a predetermined composition;b) causing the particle beam, under a second set of beam conditions, to impinge upon the region of the target sample;c) monitoring x-rays generated by the interaction between the particle beam and the target sample so as to produce monitored data;d) calculating output data based upon the monitored and reference data; ande) removing material from the region of the target sample so as to reduce the thickness of the region in accordance with the output data.2. A method according to claim 1 , wherein the reference sample has dimensions that are known or sufficient to act as a hulk material in response to the particle beam.3. A method according to claim 1 , wherein step (a) is performed in accordance with a theoretical representation in which the reference data is calculated based upon a collection solid angle for the generated x-rays and in accordance with the first set of beam conditions.4. A method according to claim 1 , wherein the reference data in step (a) is obtained by causing the particle beam to impinge upon part of a physical reference sample under the ...

ETCHING APPARATUS AND ETCHING METHOD

According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate, a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage, a grid which is provided between the plasma generator and the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a controller which is configured to mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time. 1. An etching apparatus comprising:an etching chamber;a stage in the etching chamber, the stage which holds one of a first substrate and a second substrate;a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage;a grid which is provided between the plasma generator and the stage;a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated;a first driver changing a beam angle between a direction which is perpendicular to an upper surface of the stage and the direction in which the ion beam is irradiated;a second driver which is rotated the stage on the rotational axis; anda controller which is configured to:mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time.2. The apparatus of claim 1 , wherein [{'br': None, 'i': 'X', 'θ≧, and'}, {'br': None, 'i': X', 'D/L, 'sup': '−1', '={tan()}/2,'}], 'the ion beam irradiated to the first ...

FLEXIBLE SUBSTRATE HAVING A PLASMONIC PARTICLE SURFACE COATING AND METHOD OF MAKING THE SAME

Article comprising a polymeric substrate having a first major surface comprising a plurality of particles attached thereto with plasmonic material on the particles. Articles described herein are useful, for example, for indicating the presence, or even the quantity, of an analyte. 1. An article comprising a polymeric substrate having a first major surface comprising a plurality of two-dimensional particles attached thereto , the plurality of two-dimensional particles having a collective outer surface , and a layer comprising plasmonic material on at least a portion of the collective outer surface , wherein for at least 50 percent by number of the particles there is at least 20 percent of the respective particle surface area consisting of points having tangential angles in a range from 5 to 175 degrees from the first major surface of the polymeric substrate , andwherein when the plasmonic material comprises gold, the plasmonic material has a planar equivalent thickness of at least 25 nm, and when the plasmonic material comprises a material other than gold, the plasmonic material has a planar equivalent thickness of at least 10 nm.2. The article of claim 1 , wherein the plasmonic material is a plasmonic material in at least one wavelength in the ultraviolet claim 1 , visible claim 1 , or infrared wavelength range.3. (canceled)4. The article of claim 1 , wherein the particles comprise a dielectric material.5. The article of further comprising a dielectric layer disposed between the plurality of particles and plasmonic material.6. An article comprising a polymeric substrate having a first major surface with a tie layer on the first major surface of the polymeric substrate and a plurality two-dimensional particles attached to the tie layer claim 1 , having a collective outer surface claim 1 , and a layer comprising plasmonic material on at least a portion of the collective outer surface claim 1 , the particles each having an outer surface claim 1 , wherein for at least ...

SYSTEMS AND PROCESSES FOR PLASMA TUNING

Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater. 1. A semiconductor processing system comprising: the pedestal comprises an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, the processing region at least partially defined by the pedestal,', 'the pedestal comprises a heater embedded within the pedestal,', 'the heater is coupled with a power supply,', 'an RF filter is coupled between the power supply and the heater, and', 'a shunt capacitor is coupled between the RF filter and the heater., 'a pedestal positioned within a semiconductor processing chamber and configured to support a substrate, wherein2. The semiconductor processing system of claim 1 , wherein the shunt capacitor comprises a variable capacitor coupled with a motor configured to adjust a capacitance of the variable capacitor.3. The semiconductor processing system of claim 2 , wherein the motor is controlled by a control system configured to perform real-time adjustments to impedance of the heater.4. The semiconductor processing system of claim 2 , wherein the heater comprises a resistive heater including an inlet line and an outlet line claim 2 , and wherein the inlet line and the outlet line are each coupled with a variable capacitor.5. The semiconductor processing system of claim 4 , wherein the inlet line and the outlet line are each electrically coupled ...

CHAMBER WITH FLOW-THROUGH SOURCE

Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material. 1. A semiconductor processing chamber comprising:a chamber housing at least partially defining an interior region of the semiconductor processing chamber;a showerhead positioned within the chamber housing, wherein the showerhead at least partially divides the interior region into a remote region and a processing region in which a substrate can be contained; andan inductively coupled plasma source positioned between the showerhead and the processing region, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material.2. The semiconductor processing chamber of claim 1 , wherein the dielectric material is selected from the group consisting of aluminum oxide claim 1 , yttrium oxide claim 1 , single crystalline silicon claim 1 , and quartz.3. The semiconductor processing chamber of claim 1 , wherein the conductive material comprises a copper tube configured to receive a fluid flowed within the tube.4. The semiconductor processing chamber of claim 1 , wherein the dielectric material defines apertures through the inductively coupled plasma source claim 1 , and wherein the conductive material is positioned about the apertures within the dielectric material.5. The semiconductor processing chamber of claim 1 , wherein the apertures are included in a uniform pattern across the dielectric material and about the conductive material.6. The ...

ELECTROLYTIC MEMBRANE VALVE

An electrolytic membrane valve and method of its manufacture are provided. The valve includes a substrate comprising an opening and a conductive membrane impermeable to a conductive media and sealing the opening, as well as a cathode on the substrate and in communication with the membrane through the conductive media, and an anode on the substrate directly contacting the membrane. The anode is at least partially protected from electrochemical corrosion, and upon application of an electrical potential between the anode and the cathode, the membrane ruptures to allow flow of the conductive media through the opening. 1. An electrolytic valve comprising:a substrate comprising an opening;a conductive membrane impermeable to a conductive media and sealing the opening;a cathode on the substrate and in communication with the membrane through the conductive media;an anode on the substrate and directly contacting the membrane;wherein the anode is at least partially protected from electrochemical corrosion; andwherein upon application of an electrical potential between the anode and the cathode, the membrane ruptures to allow flow of the conductive media through the opening.2. The electrolytic valve of claim 1 , wherein either of the anode or cathode are printed onto the substrate.3. The electrolytic valve of claim 1 , wherein the anode comprises a carbon-based ink comprising a conductive material.4. The electrolytic valve of claim 2 , wherein the anode is printed onto the substrate such that the anode partially overlaps the membrane and physically holds the membrane against a surface of the substrate and over the opening.5. The electrolytic valve of claim 1 , wherein the anode overlaps the membrane around a perimeter of the membrane.6. The electrolytic valve of claim 1 , wherein at least a portion of the cathode arcs circumferentially around an axis defined by a center point of the membrane.7. The electrolytic valve of claim 4 , wherein the substrate is flexible claim 4 , and ...

Graphene-based Multi-Modal Sensors

A method for fabricating a composite film structure, the method includes determining a desired morphology for a metallic layer of the composite film structure, selecting a first metal substrate based on the determining, transferring a graphene layer onto the first metal substrate, depositing the metallic layer on the graphene layer to achieve the desired morphology, and removing the first metal substrate from the graphene and the deposited metallic layer to form the composite film structure. A surface energy difference between the first metal substrate and the deposited metallic layer results in the desired morphology of the metallic layer. 1. A strain sensor , the strain senor comprising:a graphene layer;a metallic layer on the graphene layer; anda polymer on the graphene layer and the metallic layer; wherein a piezoresistance of the strain sensor allows strain spanning four orders of magnitude to be detected.2. The strain sensor of claim 1 , wherein the metallic layer comprises palladium claim 1 , the first metal substrate comprises copper and the polymer comprises polydimethylsiloxane.3. The strain sensor of claim 1 , wherein the graphene layer is configured to suppress crack propagation through the metallic layer.4. The strain sensor of claim 1 , wherein a gauge factor at 1% strain of the strain sensor is at least 1300. This application is a divisional of U.S. application Ser. No. 15/288,687, filed Oct. 7, 2016, which claims the benefit of the priority date of U. S. Provisional Patent Application No. 62/238,489, entitled “Graphene-based Multi-Modal Sensors,” filed on Oct. 7, 2015, and U. S. Provisional Patent Application No. 62/238,495, entitled “Graphene-based Multi-Modal Sensors,” filed on Oct. 7, 2015. The entire contents of these provisional applications are herein incorporated by reference.This invention relates to sensors.Graphene has several attractive characteristics. It is flexible and stretchable compared to metallic films, conductive, transparent, ...

MULTI-LAYERED COATING WITH COLUMNAR MICROSTRUCTURE AND BRANCHED COLUMNAR MICROSTRUCTURE

A method includes forming a multi-layered ceramic barrier coating under a chamber pressure of greater than 1 Pascals. In the method, low- and high-dopant ceramic materials are evaporated using input evaporating energies that fall, respectively, above and below a threshold for depositing the materials in a columnar microstructure (low-dopant) and in a branched columnar microstructure (high-dopant). 1. A method of forming a multi-layered ceramic barrier coating , the method comprising:under a chamber pressure of greater than 1 Pascals, evaporating a low-dopant ceramic material using a first input evaporating energy that is above a threshold for depositing the low-dopant ceramic material in a low-dopant ceramic columnar microstructure versus a low-dopant ceramic branched columnar microstructure, the evaporated low-dopant ceramic material depositing on a substrate as a first layer that has the low-dopant ceramic columnar microstructure; andunder the chamber pressure of greater than 1 Pascal, evaporating a high-dopant ceramic material using a second input evaporating energy that is below a threshold for depositing the high-dopant ceramic material in a high-dopant ceramic columnar microstructure versus a high-dopant ceramic branched columnar microstructure, the evaporated high-dopant ceramic material depositing on the substrate as a second layer that has the high-dopant ceramic branched columnar microstructure.2. The method as recited in claim 1 , wherein the evaporating of the low-dopant ceramic material includes modulating a first percentage of an electron beam power that is on a pool of the low-dopant ceramic material to produce the first input evaporating energy claim 1 , and the evaporating of the high-dopant ceramic material includes modulating a second percentage of the electron beam power that is on a pool of the high-dopant ceramic material to produce the second input evaporating energy.3. The method as recited in claim 2 , wherein the modulating of the first ...

Graphene-based Multi-Modal Sensors

A method for fabricating a composite film structure, the method includes determining a desired morphology for a metallic layer of the composite film structure, selecting a first metal substrate based on the determining, transferring a graphene layer onto the first metal substrate, depositing the metallic layer on the graphene layer to achieve the desired morphology, and removing the first metal substrate from the graphene and the deposited metallic layer to form the composite film structure. A surface energy difference between the first metal substrate and the deposited metallic layer results in the desired morphology of the metallic layer. 1. A method for fabricating a composite film structure , the method comprising:determining a desired morphology for a metallic layer of the composite film structure;selecting a first metal substrate based on the determining;transferring a graphene layer onto the first metal substrate;depositing the metallic layer on the graphene layer to achieve the desired morphology; andremoving the first metal substrate from the graphene and the deposited metallic layer to form the composite film structure, wherein a surface energy difference between the first metal substrate and the deposited metallic layer results in the desired morphology of the metallic layer.2. The method of claim 1 , wherein the desired morphology comprises nanoislands.3. The method of claim 2 , wherein a distance between edges of nanoislands in the metallic layer is on the order of molecular dimensions.4. The method of claim 1 , wherein depositing the metallic layer comprises deposition of evaporated flux of metallic atoms.5. The method of claim 4 , wherein the evaporated flux of metallic atoms self-assemble to yield the desired morphology.6. The method of claim 4 , where in the evaporated flux of metallic atoms are produced by electron beam evaporation claim 4 , thermal evaporation claim 4 , or sputtering.7. The method of claim 1 , wherein transferring the graphene ...

HIGH STRAIN DAMPING METHOD INCLUDING A FACE-CENTERED CUBIC FERROMAGNETIC DAMPING COATING, AND COMPONENTS HAVING SAME

A method to increase the damping of a substrate using a face-centered cubic ferromagnetic damping coating having high damping loss attributes when a strain amplitude is 500-2000 micro-strain, and/or maximum damping loss attributes that occurs when the strain amplitude is greater than 250 micro-strain, and a turbine component having a face-centered cubic ferromagnetic damping coating. 12022. A method to increase the damping of a substrate () having a substrate thickness () , comprising:a) creating a face-centered cubic damping material ingot comprising a face-centered cubic damping material;{'b': '20', 'b) placing the face-centered cubic damping material ingot and the substrate () in a vacuum chamber;'}c) forming a vapor from the face-centered cubic damping material ingot;{'b': 24', '20', '10', '24', '20', '100, 'd) condensing the vapor on a surface () of the substrate () to create a face-centered cubic ferromagnetic damping coating () on the surface () of the substrate (), resulting in a coated substrate ();'}e) wherein a face-centered cubic ferromagnetic damping material test beam has a maximum first mode test beam system loss factor that occurs where the strain amplitude is greater than 250 micro-strain.2. The method according to claim 1 , wherein the face-centered cubic ferromagnetic damping material test beam has a first mode test beam system loss factor of at least 0.010 when the strain amplitude is 500-2000 micro-strain.3. The method according to claim 1 , wherein the first mode test beam system loss factor is greater than 0.010 throughout a consistent strain range that is at least 250 micro-strain wide claim 1 , and wherein the consistent strain range begins above a 500 micro-strain level claim 1 , and the first mode test beam system loss factor varies by no more than twenty-five percent throughout the consistent strain range.4. The method according to claim 1 , wherein the first mode test beam system loss factor is greater than 0.010 throughout a consistent ...

Reactor and method for growing carbon nanotube using the same

A reactor includes a reactor chamber and a carbon nanotube catalyst composite layer. The reactor chamber has an inlet and an outlet. The carbon nanotube catalyst composite layer rotates in the reactor chamber, wherein the carbon nanotube catalyst composite layer defines a number of apertures, gases in the reactor chamber flow penetrate the carbon nanotube catalyst composite layer through the plurality of apertures.