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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 9442. Отображено 100.
12-01-2012 дата публикации

Method and apparatus for stabilizing a coating

Номер: US20120009355A1
Автор: Michael R. Haag, Scott Corneillie, Steven M. Gasworth
Принадлежит: Exatec LLC

A method and apparatus for stabilizing an incidental coating in a substrate coating apparatus is provided. The method includes defining interior surfaces of a coating zone in the substrate coating apparatus. The method may include preheating interior surfaces to a local preheat temperature that is approximately equal to a local coating temperature attained by the surfaces during coating of a substrate, at least partially defining the interior surfaces with a compliant fabric, or at least partially defining the interior surfaces with a compliant fabric and preheating the interior surfaces.

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Номер записи: 1
19-01-2012 дата публикации

Methods for forming low stress dielectric films

Номер: US20120015113A1
Автор: Lei Luo, Manuel A. Hernandez, Shankar Venkataraman, Zhong Qiang Hua
Принадлежит: Applied Materials Inc

A method for forming a multi-layer silicon oxide film on a substrate includes performing a deposition cycle that comprises depositing a silicon oxide layer using a thermal chemical vapor deposition (CVD) process and depositing a silicon oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process. The deposition cycle is repeated a specified number of times to form the multi-layer silicon oxide film comprising a plurality of silicon oxide layers formed using the thermal CVD process and a plurality of silicon oxide layers formed using the PECVD process. Each silicon oxide layer formed using the thermal CVD process is adjacent to at least one silicon oxide layer formed using the PECVD process.

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Номер записи: 2
16-02-2012 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20120040518A1
Автор: Boil Pashmakov, David Strand, Patrick Klersy, Stanford R. Ovshinsky
Принадлежит: Boil Pashmakov, David Strand, Ovshinsky Stanford R, Patrick Klersy

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

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Номер записи: 3
23-02-2012 дата публикации

Plasma processing apparatus, deposition method, method of manufacturing metal plate having dlc film, method of manufacturing separator, and method of manufacturing article

Номер: US20120045591A1
Автор: Ge Xu
Принадлежит: Canon Anelva Corp

A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder.

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Номер записи: 4
15-03-2012 дата публикации

Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method

Номер: US20120064726A1
Автор: Jun Hashimoto, Masaru Sasaki, Shota Yoshimura, Tetsuya Nishizuka, Toshihisa Nozawa, Toshihisa Ozu
Принадлежит: Tokyo Electron Ltd

There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

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Номер записи: 5
22-03-2012 дата публикации

Surface wave plasma cvd apparatus and film forming method

Номер: US20120067281A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.

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Номер записи: 6
03-05-2012 дата публикации

Thin-film manufacturing method and apparatus

Номер: US20120107524A1
Автор: Katsumi Taniguchi, Kungen TEII, Tomonori Katano
Принадлежит: Fuji Electric Co Ltd, Kyushu University NUC

A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

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Номер записи: 7
17-05-2012 дата публикации

Method for producing diamond-like carbon film body

Номер: US20120121817A1
Автор: Takao Saito, Tatsuya Terazawa
Принадлежит: NGK Insulators Ltd

Provided is a method of manufacturing a DLC film formed body in which peeling-off of a DLC film is suppressed. In manufacturing a DLC film formed body having a film hardness of 10 GPa or more, prior to the formation of the DLC film, a surface of a base is pretreated with a discharge plasma and a silicon carbide film being an interlayer is formed on the surface of the base. The surface of the base is pretreated by supplying an inside of the chamber with a gas mixture obtained by mixing 1 part by volume or more and 10 parts by volume or less of argon gas into 100 parts by volume of helium gas while adjusting a pressure inside of the chamber in which the base is housed to 20 hPa or higher and an atmospheric pressure or lower, and generating a discharge plasma in the mixed.

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Номер записи: 8
31-05-2012 дата публикации

Plasma treatment apparatus

Номер: US20120132368A1
Автор: Hiroyuki Kobayashi, Naoshi Itabashi, Shoichi Nakashima, Takumi Tandou
Принадлежит: HITACHI LTD

To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced.

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Номер записи: 9
14-06-2012 дата публикации

Surface wave plasma cvd apparatus and layer formation method

Номер: US20120148763A1
Автор: Masayasu Suzuki
Принадлежит: Shimadzu Corp

A surface wave plasma CVD apparatus, includes: a waveguide ( 3 ) that is connected to a microwave source ( 2 ), and in which a plurality of slot antennas (S) are formed thereof; a dielectric plate ( 4 ) for conducting microwaves emitted from the plurality of slot antennas (S) into a plasma processing chamber ( 1 ) so that a surface wave plasma is produced; an insulating shield member (lb) that is arranged so as to surround a layer formation processing region (R) in which the surface wave plasma is produced; and a gas ejection portion ( 52 ) that ejects process material gas into the layer formation processing region (R).

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Номер записи: 10
21-06-2012 дата публикации

Microwave antenna for generating plasma

Номер: US20120153825A1
Автор: Bong Ju Lee, Hyun Jong You, Soo Ouk Jang, Yong Ho Jung
Принадлежит: Korea Basic Science Institute KBSI

The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

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Номер записи: 11
28-06-2012 дата публикации

Plasma processing apparatus and substrate processing method

Номер: US20120160809A1
Автор: Kiyotaka Ishibashi, Osamu Morita
Принадлежит: Tokyo Electron Ltd

A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32 . The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47 . The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

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Номер записи: 12
12-07-2012 дата публикации

Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels

Номер: US20120178202A1
Автор: Mohd Aslami
Принадлежит: Individual

A plasma vapor deposition system for making multi-junction silicon thin film solar cell modules and panels including a flexible substrate disposed about and removably supported by a dual-walled cylindrical substrate support for axially rotating the flexible substrate about its longitudinal axis, the dual-walled cylindrical substrate support comprising an inner wall spaced apart by an outer wall to define a coaxial cavity; a plasma vapor deposition torch located substantially adjacent to the flexible substrate for depositing at least one thin film material layer on an outer surface of the flexible substrate; and a traversing platform for supporting the rotatable substrate support relative to the plasma vapor deposition torch, the rotatable substrate support being traversed along its longitudinal axis by the traversing platform.

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Номер записи: 13
19-07-2012 дата публикации

Semiconductor device manufacturing method

Номер: US20120184107A1
Автор: Tatsuo Nishita, Toshihiko Shiozawa, Yoshihiro Hirota, Yoshihiro Sato
Принадлежит: Tokyo Electron Ltd

In a semiconductor device manufacturing method, the formation of a sacrificial oxide film and removal thereof by wet etching and/or the formation of a silicon dioxide film and removal thereof by wet etching are performed. In the process for manufacturing a semiconductor device, the formation of the sacrificial oxide film and/or the silicon dioxide film is performed within a processing chamber of a plasma processing apparatus using a plasma in which O( 1 D 2 ) radicals produced using a processing gas that contains oxygen are dominant.

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Номер записи: 14
02-08-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120193633A1
Автор: Akihiko Kohno, Kohichi Tanaka, Toshio Mizuki
Принадлежит: Sharp Corp

A method for fabricating a semiconductor device according to the present invention includes the steps of: (a) providing a substrate ( 11 a ) in a chamber ( 26 ); (b) supplying a microwave into the chamber ( 26 ) through a dielectric plate ( 24 ), of which one surface that faces the chamber is made of alumina, thereby depositing a microcrystalline silicon film ( 14 ) with an aluminum concentration of 1.0×10 16 atoms/cm 3 or less on the substrate ( 11 a ) by high-density plasma CVD process; and (c) making a thin-film transistor that uses the microcrystalline silicon film as its active layer. As a result, a semiconductor device including a TFT that uses a microcrystalline silicon film with a mobility of more than 0.5 cm 2 /Vs as its active layer is obtained.

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Номер записи: 15
06-09-2012 дата публикации

Plasma system and method of producing a functional coating

Номер: US20120222617A1
Автор: Sascha Henke, Stefan Grosse, Susanne Spindler
Принадлежит: Individual

A plasma system has at least one inductively coupled high-frequency plasma jet source having a burner body delimiting a plasma generating space, having an outlet orifice for the plasma jet, and a chamber communicating with the plasma jet source through the outlet orifice, having a substrate situated in the chamber, where it is exposed to the plasma jet. The substrate is situated on a substrate electrode to which an electric voltage may be applied. In addition, a method of producing a functional coating on the substrate using such a plasma system is also described. In a preferred embodiment, during operation of the plasma system, both the plasma jet and the electric voltage on the substrate electrode are pulsed and/or a pressure gradient is maintained between the interior of the plasma jet source and the interior of the chamber.

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Номер записи: 16
13-09-2012 дата публикации

Plasma generating apparatus and plasma etching method using the same

Номер: US20120231631A1
Автор: Hongseub KIM
Принадлежит: JEHARA CORPARATION

A plasma generating apparatus and a plasma etching method are provided. The apparatus includes a chamber, a barrier, a susceptor, and a Radio Frequency (RF) power. The chamber forms a reaction space isolated from the external. The barrier divides the chamber into an upper chamber and a lower chamber. The barrier has a plurality of through-holes through formed to communicate the upper chamber and the lower chamber. The susceptor is installed in the lower chamber. The RF power supplies a bias power to the susceptor.

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Номер записи: 17
13-09-2012 дата публикации

Sensor for measuring plasma parameters

Номер: US20120232817A1
Автор: Donal O'Sullivan, Paul Scullin
Принадлежит: Individual

A method of measuring ion current between a plasma and an electrode in communication with the plasma is disclosed. A time-varying voltage at the electrode and a time- varying current through the electrode are measured. The method comprise recording, for each of a plurality of voltage values, v′, a plurality, n, of current values I(v′); and obtaining from the current and voltage values a value of the ion current. The electrode is insulated from the plasma by an insulating layer, so that the current values lack a DC component. The method includes performing a mathematical transform effective to: express the current and voltage values as a relationship between the real component of current through the electrode and the voltage, thereby eliminating a capacitive contribution to the current through the electrode; isolate from the real component of current through the electrode an isolated contribution attributable to an ion current and a resistive term, the contribution being free of any electron current contribution; and determine from the isolated contribution a value of ion current.

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Номер записи: 18
04-10-2012 дата публикации

Plasma processing apparatus and microwave introduction device

Номер: US20120247676A1
Автор: Atsushi Ueda, Junichi Kitagawa, Shigenori Ozaki, Yutaka Fujino
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

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Номер записи: 19
13-12-2012 дата публикации

Film forming apparatus, film forming method, method for optimizing rotational speed, and storage medium

Номер: US20120315394A1
Автор: Shozo Ito
Принадлежит: Tokyo Electron Ltd

A film forming apparatus for forming a film on an object includes: a processing container; gas supply means, having gas jet ports, respectively; a holding means for holding the object; a drive mechanism for moving the holding means relative to the gas jet ports; and a control means which, when repeating P times a cycle, consisting of a supply period for supplying a gas and a supply stop period during which the supply of the gas is stopped, performs control so that as viewed from the center of the object, a gas supply starting position is sequentially shifted in the circumferential direction of the object for every cycle in such a manner that the entire circumference of the object to be processed is divided into K segments (K=P), K being an arbitrary division number, and the gas supply starting position is shifted by one segment for every cycle.

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Номер записи: 20
13-12-2012 дата публикации

Crystalline silicon film forming method and plasma cvd apparatus

Номер: US20120315745A1
Автор: Daisuke Katayama, Masayuki Kohno, Minoru Honda, Toshio Nakanishi
Принадлежит: Tokyo Electron Ltd

A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si n H 2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.

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Номер записи: 21
03-01-2013 дата публикации

Method and device for plasma-treating workpieces

Номер: US20130004682A1
Автор: Sebastian Kytzia, Sönke SIEBELS
Принадлежит: KHS CORPOPLAST GMBH

The method and device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. The method process is optically monitored at least at times. In the optical monitoring, spectral lines of the radiation of the plasma above 500 nanometers are evaluated. Preferably, the evaluation is performed for frequencies above 700 nanometers.

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Номер записи: 22
03-01-2013 дата публикации

Method of protecting patterned magnetic materials of a stack

Номер: US20130004736A1
Автор: David Shiao-Min Kuo, Justin Jia-Jen Hwu, Koichi Wago, Yuan Xu, Zhaohui Fan
Принадлежит: SEAGATE TECHNOLOGY LLC

The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.

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Номер записи: 23
10-01-2013 дата публикации

Silicon oxide film forming method and plasma oxidation apparatus

Номер: US20130012033A1
Автор: Shuichiro Otao, Yoshihiro Sato, Yoshiro Kabe
Принадлежит: Tokyo Electron Ltd

A silicon oxide film forming method includes forming a silicon oxide film by allowing a plasma of a processing gas to react on a silicon exposed on a surface of a target object to be processed in a processing chamber of a plasma processing apparatus. The processing gas includes an ozone-containing gas having a volume ratio of O 3 to a total volume of O 2 and O 3 , ranging 50% or more.

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Номер записи: 24
17-01-2013 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20130017686A1
Автор: Kazuhide Ino, Tadahiro Ohmi, Takahiro Arakawa
Принадлежит: ROHM CO LTD

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7× n /4≦ D ≦1.3× n /4 ( n being a natural number).

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Номер записи: 25
17-01-2013 дата публикации

Plasma nitriding method and plasma nitriding apparatus

Номер: US20130017690A1
Автор: Daisuke Tamura, Hideyuki Noguchi, Kazuyoshi Yamazaki, Koichi Takatsuki, Tomohiro Saito
Принадлежит: Tokyo Electron Ltd

In a plasma nitriding method, a processing gas containing nitrogen gas and rare gas is introduced into a processing chamber of a plasma processing apparatus by setting a flow rate thereof as a total flow rate [mL/min(sccm)] of the processing gas per 1 L volume of the processing chamber within a range from 1.5 (mL/min)/L to 13 (mL/min)/L. Further, a nitriding process is performed on oxygen-containing films of target objects to be processed by generating a nitrogen-containing plasma in the processing chamber and while exchanging the target objects.

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Номер записи: 26
24-01-2013 дата публикации

Plasma nitriding method

Номер: US20130022760A1
Автор: Masaki Sano, Toshinori Debari
Принадлежит: Tokyo Electron Ltd

A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%.

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Номер записи: 27
31-01-2013 дата публикации

Plasma processing method and plasma processing apparatus

Номер: US20130029492A1
Автор: Masakazu Miyaji, Masaki Fujii, Michikazu Morimoto, Tetsuo Ono, Yoshiharu Inoue
Принадлежит: Hitachi High Technologies Corp

A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

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Номер записи: 28
14-03-2013 дата публикации

Discharge electrode array for thin-film solar cell deposition

Номер: US20130063018A1
Автор: Chunzhu Wang, Jianhua Zhou, Shengming Hu, Yi Li, Zhijian Li, Zhubing He
Принадлежит: Shenzhen TRONY Science and Tech Dev Co Ltd

A discharge electrode array for a silicon-based thin film solar cell deposition chamber is provided, relating to solar cell technologies. The discharge electrode array includes a signal feed component having a rectangular-shaped end, a flat waist corresponding to a feed-in port located in a hallowed rectangular area on a center region of a cathode plate having a shielding cover, connecting a feed-in power supply signal by surface contact. The electrode array includes at least a set of cathode plates and an anode plate, with two cathode plates sharing or surrounding one anode plate. Uniform large area and stable discharge driven by the RF/VHF power supply signal can be achieved, and the standing wave and the skin effect can be effectively removed. The production efficiency can be improved and the cost can be reduced.

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Номер записи: 29
21-03-2013 дата публикации

Plasma cvd method, method for forming silicon nitride film and method for manufacturing semiconductor device

Номер: US20130072033A1
Автор: Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi
Принадлежит: Tokyo Electron Ltd

A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

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Номер записи: 30
28-03-2013 дата публикации

Microwave processing apparatus and method for processing object to be processed

Номер: US20130075389A1
Автор: Mitsutoshi ASHIDA
Принадлежит: Tokyo Electron Ltd

A microwave processing apparatus includes a processing chamber which accommodates an object; a microwave introducing unit for generating microwaves used to process the object and introducing the microwaves into the processing chamber; and a control unit for controlling the microwave introducing unit. The microwave introducing unit includes microwave sources to generate the microwaves and introduces parts of the microwaves into the processing chamber simultaneously, and the control unit controls the microwave sources such that arbitrary combinations of the microwave sources alternately repeat a simultaneous microwave generating state and a microwave non-generating state during a state of processing the object.

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Номер записи: 31
18-04-2013 дата публикации

Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants

Номер: US20130095255A1
Автор: "ONeill Mark Leonard", Haas Mary Kathryn, Lukas Aaron Scott, Vincent Jean Louise, VRTIS Raymond Nicholas
Принадлежит: AIR PRODUCTS AND CHEMICALS, INC.

A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a Cto Ccyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6. 1. A chemical vapor deposition method for producing a porous organosilica glass film represented by the formula SiOCHF , where v+w+x+y+z=100% , v is from 10 to 35 atomic % , w is from 10 to 65 atomic % , x is from 5 to 30 atomic % , y is from 10 to 50 atomic % and z is from 0 to 15 atomic % , said method comprising:providing a substrate within a vacuum chamber;{'sub': 4', '14, 'introducing into the vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a Cto Ccyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2;'}applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; andremoving from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.2. The method of wherein the dielectric constant is less than 2.2.3. ...

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Номер записи: 32
25-04-2013 дата публикации

MICROWAVE PLASMA REACTORS

Номер: US20130101730A1
Автор: Asmussen Jes, Becker Michael, Grotjohn Timothy, Gu Yajun, Hemawan Kadek W., KING David, Lu Jing, Reinhard Donnie K., Schuelke Thomas, Yaran M. Kagan
Принадлежит:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity. 122.-. (canceled)23. A process for depositing a component on a substrate , the process comprising: [{'sub': 0', '0, '(i) a first microwave chamber having a reference plane at a reference axial location Zthe first microwave chamber comprising an electromagnetic wave source and extending in an axial direction z>Z;'}, {'sub': 0', '0, '(ii) a plasma chamber having an outer wall, the plasma chamber extending into the first microwave chamber such that at least a portion of the plasma chamber is located at z>Zand at least a portion of the plasma chamber is located at z Подробнее

Номер записи: 33
09-05-2013 дата публикации

PLASMA PROCESSING APPARATUS

Номер: US20130112352A1
Автор: Hirayama Masaki, Horiguchi Takahiro, Ohmi Tadahiro
Принадлежит:

A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane. 1. A plasma processing apparatus comprising:a processing chamber produced from a metal;a susceptor configured to mount a substrate and installed in the processing chamber;an electromagnetic wave source that supplies an electromagnetic wave necessary to excite plasma in the processing chamber;one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source into an inside of the processing chamber, the inner wall facing the susceptor;one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; anda surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber,wherein the surface wave propagating section and a bottom ...

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Номер записи: 34
16-05-2013 дата публикации

Method for Cold Plasma Treatment of Plastic Bottles and Device for Implementing Same

Номер: US20130118406A1
Автор: ROSTAING Jean-Christophe
Принадлежит: Air Liquide, Societe Anonyme pour Etude et Exploitation des Procedes Georges Claude

The present invention relates to a method for treating plastic bottles comprising an operation for cold plasma sterilization with non-germicidal gasses and/or an operation for the cold plasma deposition of a diffusion barrier layer, said method being characterized in that said cold plasma delivers adjustable nonthermal energy to the entire inside surface of the bottle, said cold plasma being generated either through a distributed propagation of microwaves having a maximum intensity in the vicinity of said surface or by a hollow cathode system adapted to the bottle and supplied with pulsed DC and/or RF voltage. The invention also relates to the devices for implementing the method. 1. A device for generating a cold plasma that is operable to treat a polymer bottle in the absence of contact with liquid effluents , wherein the polymer bottle has an inner surface and an outer surface , the device comprising:a cold plasma generation device selected from the group consisting of an annular surface-wave launcher and a hollow cathode system, the annular surface-wave launcher being operable to distribute propagated non-pulsed microwaves having maximum intensity proximate the inner surface of the bottle, the hollow cathode system being adapted to the outer surface of the bottle, and the hollow cathode system being supplied with pulsed DC voltage or radiofrequency voltage;a nongermicidal gas source configured to provide a nongermicidal gas to the inner surface of the bottle; anda diffusion barrier gas source configured to provide a diffusion barrier gas to the inner surface of the bottle,wherein the cold plasma generation device is configured to create a nonthermal energy flux within the bottle to energize the nongermicidal gas under conditions operable to create the cold plasma such that the inner surface of the polymer bottle is sterilized;wherein the cold plasma generation device is configured to deposit a diffusion barrier layer on the inner surface of the polymer bottle ...

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Номер записи: 35
23-05-2013 дата публикации

APPARATUS FOR PERFORMING A PLASMA CHEMICAL VAPOUR DEPOSITION PROCESS

Номер: US20130125817A1
Автор: Hartsuiker Johannes Antoon, Milicevic Igor, Van Stralen Mattheus Jacobus Nicolaas
Принадлежит: DRAKA COMTEQ B.V.

The invention relates to an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity having a substantially rotational symmetric shape with respect to a cylindrical axis. The resonator further includes side wall portions bounding the resonant cavity in opposite cylindrical axis directions. In addition, the apparatus comprises a microwave guide extending through the outer cylindrical wall into the resonant cavity. The length of the resonant cavity in the cylindrical direction varies as a function of the radial distance to the cylindrical axis. 1. An apparatus for performing a plasma chemical vapour deposition process , comprising a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity having a substantially rotational symmetric shape with respect to a cylindrical axis , the resonator further being provided with side wall portions bounding the resonant cavity in opposite cylindrical axis directions , wherein the apparatus further comprises a microwave guide having an end extending through the outer cylindrical wall into the resonant cavity , and wherein the length of the resonant cavity in the cylindrical direction varies as a function of the radial distance to the cylindrical axis.2. An apparatus according to claim 1 , wherein the resonator includes an annular element defining at least partially a side surface of the cavity in a cylindrical direction.3. An apparatus according to or claim 1 , wherein the resonant cavity is in a cylindrical direction at least partially bounded by the surface of a cone having a longitudinal axis substantially coinciding with the cylindrical axis of the resonator and being tapered towards the opposite side surface of the cavity.4. An apparatus according to any of the preceding claims claim 1 , wherein claim 1 , in a certain range claim 1 , the ...

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Номер записи: 36
23-05-2013 дата публикации

SURFACE TREATMENT OF RUBBER USING LOW PRESSURE PLASMA

Номер: US20130129850A1
Автор: Ronlan Alvin
Принадлежит:

A method of treating a surface of an object comprising a rubber material and in particular a bladder for use in a process for making a vehicle tyre. The method comprises subjecting the surface to a gas at a low pressure at which the gas is susceptible of forming plasma, and causing the gas to form plasma. In order to obtain repellent properties of the surface of the rubber material fluorine gas such as tetrafluormethane or hexafluorethane is used. Preferably the treatment is performed until there is obtained a surface layer of the rubber material with properties modified by the treatment having an expected lifetime corresponding to the expected lifetime of the object. 1. A method of treating a surface of an object comprising a rubber material , wherein the object being a bladder for use in a process for making a vehicle tyre , the method comprising:subjecting the surface to a gas at a low pressure at which the gas is susceptible of forming a plasma, wherein the gas is a fluorine gas; andcausing the gas to form a plasma.2. The method according to claim 1 , wherein the fluorine gas contains tetrafluormethane and/or hexafluorethane.3. The method according to claim 1 , wherein the object is a bladder for use in a process for making a vehicle tyre.4. The method according to claim 1 , wherein the treatment is performed until there is obtained a surface layer of the rubber material with properties modified by the treatment having an expected lifetime corresponding to the expected lifetime of the object.5. The method according to claim 3 , wherein the treatment is performed until there is obtained a surface layer of the rubber material with properties modified by the treatment having an expected lifetime corresponding to the expected lifetime of the object and where the bladder is in a stretched position during the plasma treatment.6. The method according to claim 1 , wherein the stretching is done by mechanical means.7. The method according to claim 1 , wherein the ...

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Номер записи: 37
30-05-2013 дата публикации

Large area, atmospheric pressure plasma for downstream processing

Номер: US20130134878A1
Автор: Gary S. Selwyn
Принадлежит: APJet Inc

An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm 3 and about 200 W/cm 3 , while having an operating gas temperature of less than 50° C., for processing materials outside of the discharge, is described. The apparatus produces active chemical species, including gaseous metastables and radicals which may be used for polymerization (either free radical-induced or through dehydrogenation-based polymerization), surface cleaning and modification, etching, adhesion promotion, and sterilization, as examples. The invention may include either a cooled rf-driven electrode or a cooled ground electrode, or two cooled electrodes, wherein active components of the plasma may be directed out of the plasma and onto an external workpiece without simultaneously exposing a material to the electrical influence or ionic components of the plasma.

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Номер записи: 38
20-06-2013 дата публикации

Apparatus for performing a plasma chemical vapour deposition process

Номер: US20130152858A1
Автор: Igor Milicevic, Johannes Antoon Hartsuiker, Mattheus Jacobus Nicolaas Van Stralen
Принадлежит: Draka Comteq BV

The invention relates to an apparatus for performing a plasma chemical vapour deposition process. The apparatus comprises a mainly cylindrical resonator being provided with an outer cylindrical wall enclosing a resonant cavity extending in a circumferential direction around a cylindrical axis. The resonator is further provided with side wall portions bounding the resonant cavity in the cylindrical direction, and with a slit configuration extending in a circumferential direction around the cylindrical axis providing access from the resonant cavity radially inwardly. Further, the slit configuration includes slit sections that are mutually offset in the cylindrical direction.

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Номер записи: 39
20-06-2013 дата публикации

Method for Polymer Plasma Deposition

Номер: US20130158189A1
Автор: Hubert Julie, Reniers François
Принадлежит:

The present invention is related to a method or the deposition of a chlorinated polymeric layer onto a ubstrate, said method comprising the steps of:—generating a plasma in a gaseous medium by means of a plasma device;—placing the substrate in contact with the plasma, or in the post-plasma area;—introducing in said plasma or in the post-plasma area a chlorinated precursor of the chlorinated polymer. 2. Method according to wherein the precursor partial pressure in the plasma device is lower than or equal to the saturation vapour pressure of the precursor at the substrate temperature.3. Method according to wherein the gaseous medium further comprises a plasma generating gas such as Argon or Helium.4. Method according to wherein the chlorinated precursor comprises a chlorinated organic compound having a Cl/C ratio higher than 0.25 claim 1 , preferably higher than 0.5 claim 1 , more preferably higher than or equal to 1.5. Method according to wherein said chlorinated precursor comprises a polychlorinated organic compound selected from the group consisting of polychloroalkane claim 1 , polychloroalkene claim 1 , polychloroalkyne claim 1 , polychloroarene claim 1 , tertiary amine comprising perchloroalkanes groups and mixture thereof.6. Method according to wherein said polychlorinated organic compound is a perchlorinated organic compound.8. Method according to wherein the temperature of ionic and neutral species in the plasma is below 400° C. claim 1 , preferably below 150° C.9. Method according to any wherein the plasma is a dielectric barrier discharge (DBD)plasma claim 1 , a DC pulsed plasma claim 1 , a microwave plasma or a electron cyclotron resonance (ECR) discharge plasmas.10. Article comprising a substrate and a chlorinated polymeric layer producible by the method according to .11. Article according to wherein said polymeric layer is cross-linked.12. Article according to wherein said polymeric layer comprises a polymer selected from the group consisting of PVC ...

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Номер записи: 40
27-06-2013 дата публикации

Plasma cvd apparatus, method for forming thin film and semiconductor device

Номер: US20130160711A1
Автор: Hideharu Nobutoki, Naoki Yasuda, Teruhiko Kumada
Принадлежит: Individual

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

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Номер записи: 41
18-07-2013 дата публикации

Plasma processing apparatus

Номер: US20130180662A1
Автор: Kazunori Nakamoto, Kohei Sato, Yutaka Ohmoto
Принадлежит: Hitachi High Technologies Corp

In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.

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Номер записи: 42
18-07-2013 дата публикации

LOW TEMPERATURE PLASMA COATING FOR ANTI-BIOFILM FORMATION

Номер: US20130183435A1
Автор: Chen Meng, Sun Hongmin
Принадлежит:

The present invention is a process for surface treatment of a fluid-contacting device where a continuous organo-silicon or organo-silicon and oxygen plasma coating is applied at a low temperature by a plasma deposition technique to at least one contacting surface of the device and devices with the process applied. The plasma coating inhibits bacterial attachment to the device and prevents biofilm formation on said device. The coating preferably has a thickness from about 1 nm to about 100 nm, more preferably from about 20 nm to about 30 nm. The trimethylsilane and oxygen gas mixture is an approximate ratio of 1 to 4. The invention demonstrates that bacterial cells on the organo-silicon or organo-silicon/Ocoated surface are more susceptible to antibiotic treatment than their counterparts in biofilm formed on uncoated surface. 1. A process for surface treatment of a fluid-contacting device comprising the step of:applying a plasma coating to at least one contacting surface of said device, wherein said plasma coating inhibits bacterial attachment to said device.2. The process of wherein said plasma coating prevents biofilm formation on said device.3. The process of wherein said plasma coating is comprised of at least one organo-silicon monomer.4. The process of wherein said plasma coating is applied at a low temperature by a plasma deposition technique in vacuum or at atmospperic pressure to form a continuous layer on said at least one surfce of said device.5. The process of wherein said layer having a thickness from about 1 nm to about 100 nm.6. The process of wherein said layer having a thickness from about 20 nm to about 30 nm.7. The process of cliam 1 wherein said at least one monomer is from the silane group and is seleceted from dimethylsilane claim 5 , trimethylsilane claim 5 , vinyltrichlorosilane claim 5 , tetraethoxysilane claim 5 , vinyltriethoxysilane claim 5 , hexamethyldisilazane claim 5 , tetramethylsilane claim 5 , vinyldimethylethoxysilane claim 5 , ...

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Номер записи: 43
25-07-2013 дата публикации

Asymmetrical RF Drive for Electrode of Plasma Chamber

Номер: US20130186859A1
Автор: CHOI Soo Young, KUDELA Jozef, SORENSEN Carl A., WHITE John M.
Принадлежит: Applied Materials, Inc. a corporation of the State of Delaware, U.S.A.

RF power is coupled to one or more RF drive points (-) on an electrode (-) of a plasma chamber such that the level of RF power coupled to the RF drive points (--) on the half () of the electrode that is closer to the workpiece passageway () exceeds the level of RF power coupled to the RF drive points (-), if any, on the other half () of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center () of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway. 19-. (canceled)10. Apparatus for coupling RF power to a plasma chamber comprising:a plasma chamber having a workpiece passageway;an electrode positioned so as to couple electrical power from the electrode to a plasma within the plasma chamber, wherein a first half of the electrode is closer to the workpiece passageway than a second half of the electrode; andone or more RF power supplies;wherein the first half of the electrode includes one or more RF drive points that are connected to receive RF power from the one or more RF power supplies; andwherein the second half of the electrode includes no RF drive points that are connected to receive RF power.11. The apparatus of claim 10 , wherein the electrode further comprises:an RF drive point, located at the center of the electrode, connected to receive RF power from the one or more RF power supplies.12. The apparatus of claim 10 , wherein the electrode further comprises:one or more RF drive points that are connected to receive RF power from the one or more RF power supplies and that are positioned on the geometric boundary between the first and second halves of the ...

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Номер записи: 44
08-08-2013 дата публикации

METHOD AND DEVICE FOR PLASMA-TREATING WORKPIECES

Номер: US20130202814A1
Автор: Kytzia Sebastian, Siebels Sonke
Принадлежит: KHS CORPOPLAST GMBH

The method and the device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. A coating is deposited on the workpiece by means of the plasma treatment. The plasma is ignited by pulsed microwave energy. Switch-on phases and switch-off phases of a microwave input are specified by a controller. The relation between the duration of the switch-on phases and the duration of the switch-off phases is changed during the execution of the treatment process for a workpiece 1. A method for the plasma treatment of a workpiece , the method comprising the steps of:inserting the workpiece into a plasma chamber; anddepositing, with the effect of a partial vacuum after plasma ignition, a coating on the workpiece by plasma treatment;wherein plasma ignition occurs by means of pulsed microwave energy,wherein alternating “on” and “off” phases from a pulsed microwave excitation are provided by a control, andwherein, while carrying out the plasma treatment, the relationship between the duration of the “on” phases and the “off” phases is varied.2. The method according to claim 1 , wherein claim 1 , while carrying out the plasma treatment claim 1 , the quotient of the duration of the “on” times and the “off” times is increased.3. The method according to claim 1 , wherein claim 1 , at least during a part of the time of the plasma treatment claim 1 , the duration of the “off” time between two “on” times is held constant.4. The method according to claim 1 , wherein the “off” time is approximately 30 milliseconds.544. The method according to claim 1 , wherein the “on” time () for the beginning of the plasma treatment is approximately 0.3 milliseconds.644. The method according to claim 1 , wherein the “on” time () for the end of the plasma treatment is approximately 0.3 milliseconds.7. The method according to ...

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Номер записи: 45
08-08-2013 дата публикации

MECHANICALLY STABLE NANOPARTICLE THIN FILM COATINGS AND METHODS OF PRODUCING THE SAME

Номер: US20130202866A1
Автор: Lee Daeyeon
Принадлежит: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

A method for treating a surface comprises depositing a first coating comprising a plurality of nanoparticles on a substrate, wherein the first coating defines a plurality of interstitial spaces; and depositing a second coating comprising metals, metal oxides, or mixtures thereof by atomic layer deposition (ALD) on the first coating and within the interstitial spaces defined by the first coating. A mechanically stable coated product comprises a substrate; a first coating comprising a plurality of nanoparticles deposited on the substrate; wherein the first coating defines a plurality of interstitial spaces; and a second coating comprising metals, metal oxides, or mixtures thereof deposited by atomic layer deposition (ALD) on the first coating and within the interstitial spaces defined by the first coating. The mechanically stable thin film coating imparts mechanical robustness to the nanoparticles thin film, and retains or improves the desired optical and wetting properties of the nanoparticle thin film. 1. A method for treating a surface comprising the steps of:depositing a first coating comprising a plurality of nanoparticles on a substrate, wherein the first coating defines a plurality of interstitial spaces; anddepositing a second coating comprising metals, metal oxides, or mixtures thereof by atomic layer deposition (ALD) on the first coating and within the interstitial spaces defined by the first coating.2. The method of claim 1 , wherein the first coating comprises the plurality of nanoparticles and a polymer claim 1 , and the plurality of nanoparticles and the polymer are in the form of a film.3. The method of claim 1 , further comprising claim 1 , after depositing the second coating claim 1 , the step of:depositing one or more functional coatings by atomic layer deposition.4. The method of claim 3 , wherein the one or more functional coatings contain elements which impart catalytic claim 3 , optical claim 3 , absorptive claim 3 , semiconducting claim 3 , ...

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Номер записи: 46
15-08-2013 дата публикации

LINEAR PECVD APPARATUS

Номер: US20130206068A1
Автор: ANWAR Suhail, KUDELA Jozef, SORENSEN Carl A., TRUONG Douglas, WHITE John M.
Принадлежит:

The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.

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Номер записи: 47
15-08-2013 дата публикации

PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE

Номер: US20130206594A1
Автор: Collins Kenneth S., NGUYEN ANDREW, SALINAS MARTIN JEFFREY, Xu Ming, YOUSIF IMAD
Принадлежит:

Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. 1. A plasma reactor for processing a workpiece , comprising:a processing chamber enclosure comprising a chamber side wall and a chamber ceiling, and a workpiece holder inside within said processing chamber enclosure;a conductive RF enclosure overlying said chamber ceiling and comprising an RF enclosure side wall;a floating support plate within and separate from said conductive RF enclosure;plural RF plasma power applicators suspended from said floating support plate in a space below said floating support plate and above said chamber ceiling;plural actuators fixed with respect to said RF enclosure side wall and spaced about said RF enclosure side wall at periodic intervals, each one of said plural actuators comprising: (a) a motor-driven axially movable arm, (b) a rotatable joint coupled between said axially movable arm and a respective portion of said floating support plate.2. The plasma reactor of wherein said plural actuators constitute three actuators spaced at 120 degree intervals around said RF enclosure side wall claim 1 , whereby said actuators are able to tilt said floating support plate about a tilt axis oriented at any azimuthal angle θ.3. The plasma reactor of further comprising controller apparatus controlling each one of said plural actuators and programmed to compute axial motions of said plural actuators from desired values of said azimuthal angle θ of said tilt axis and a tilt angle α about said tilt axis.4. The plasma reactor of wherein: (a) said RF enclosure side wall comprises a support surface claim 3 , and (b) each of said plural actuators is mounted on said support surface and ...

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Номер записи: 48
15-08-2013 дата публикации

LIQUID REPELLENT SURFACES

Номер: US20130211004A1
Автор: Coulson Stephen
Принадлежит: P2I LIMITED

A method for forming a liquid repellent surface on a substrate, said method comprising applying a combination of nanoparticles and a polymeric material to the surface in a chamber using ionisation or activation technology, in particular plasma processing. 1. A method for forming a liquid repellent surface on a substrate , said method comprising applying a combination of nanoparticles and a polymeric material to the substrate in a chamber using ionisation or activation technology.2. A method as claimed in wherein the nanoparticles comprise silver claim 1 , palladium claim 1 , gold claim 1 , silicone claim 1 , silica claim 1 , titanium dioxide or polymeric nanoparticles.3. A method as claimed in wherein the nanoparticles have an average diameter of from 1 to 500 nm.4. A method as claimed in wherein the polymeric material is hydrophobic and/or oleophobic.5. A method as claimed in claim 1 , wherein the substrate is selected from fabrics claim 1 , fibres claim 1 , clothing claim 1 , shoes claim 1 , electronic or electrical devices or components thereof claim 1 , laboratory consumables claim 1 , filtration media or membranes or microfluidic devices.6. A method as claimed in wherein in a first step claim 1 , nanoparticles are disposed on the surface of the substrate in the chamber claim 1 , and in a subsequent step claim 1 , the substrate is exposed to ionisation or activation conditions in the presence of a monomer capable of forming said polymeric material under said conditions.7. A method as claimed in wherein the nanoparticles are disposed on the substrate surface using ionisation or activation technology.8. A method as claimed in which method comprises exposing a substrate to ionisation or activation conditions in the presence of a monomer capable of forming a polymer under said conditions and nanoparticles so that the nanoparticles and the polymeric material are formed in a single step.9. A method as claimed in wherein the nanoparticles are dispersed in the monomer ...

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Номер записи: 49
19-09-2013 дата публикации

METHODS FOR DEPOSITING A TiN-CONTAINING LAYER ON A SUBSTRATE

Номер: US20130240478A1
Автор: HUANG YI-CHIAU, SANCHEZ ERROL ANTONIO C.
Принадлежит: Applied Materials, Inc.

Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides. 1. A method of depositing a tin-containing layer on a substrate , comprising:flowing a tin source comprising a tin halide into a reaction volume;flowing a hydrogen plasma into the reaction volume;forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; anddepositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides.2. The method of claim 1 , wherein the tin halide comprises tin tetrachloride (SnCl)3. The method of claim 1 , wherein the reaction volume is the processing volume of a process chamber having the substrate disposed in the processing volume.4. The method of claim 1 , wherein the reaction volume is a cavity of at least one of a showerhead or an injector and wherein the one or more tin hydrides are flowed from the cavity of the at least one of the showerhead or the injector into a processing volume of a process chamber having the substrate disposed in the processing volume.5. The method of claim 1 , further comprising:co-flowing one or more of a silicon source or a germanium source with the one or more tin hydrides to deposit the tin-containing layer.6. The method of claim 5 , further comprising:co-flowing a dopant source with one or more of the silicon source, the germanium source, or the one or more tin hydrides.7. The method of claim 1 , further comprising:flowing a dopant source while depositing the tin-containing layer.8. The method of claim 1 , wherein the ...

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Номер записи: 50
26-09-2013 дата публикации

RECORDING MEDIUM SURFACE PROPERTY MODIFYING APPARATUS, RECORDING MEDIUM, AND INKJET PRINTER SYSTEM

Номер: US20130250017A1
Автор: Hoshina Masaru, Nakamura Takehiro, Ogata Hijiri, Saitoh Haruki
Принадлежит:

A recording medium surface property modifying apparatus is disclosed. The recording medium surface property modifying apparatus includes a conveying unit which conveys a recording medium in a predetermined direction; a discharging electrode which rotates and comes into contact with a face to be treated of the recording medium which is conveyed by the conveying unit to cause the face to be treated to be in contact with plasma to modify a surface property of the recording medium; and a hollow-shaped cover member which covers a plasma treatment unit which includes the discharging electrode, the recording medium surface property modifying apparatus further including a humidity control unit which controls, in advance, humidity of the plasma treatment unit in alignment with acidity of the recording medium which undergoes the surface property modifying treatment. 1. A recording medium surface property modifying apparatus , comprising:a conveying unit which conveys a recording medium in a predetermined direction;a discharging electrode which rotates and comes into contact with a face to be treated of the recording medium which is conveyed by the conveying unit to cause the face to be treated to be in contact with plasma to modify a surface property of the recording medium; anda hollow-shaped cover member which covers a plasma treatment unit which includes the discharging electrode, the recording medium surface property modifying apparatus further including a humidity control unit which controls, in advance, humidity of the plasma treatment unit in alignment with acidity of the recording medium which undergoes a surface property modifying treatment.2. The recording medium surface property modifying apparatus as claimed in claim 1 , further comprising:a spraying nozzle which sprays liquid in order to adjust the humidity within the plasma treatment unit; anda humidity detecting unit which detects the humidity within the plasma treatment unit, wherein a liquid spraying amount ...

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Номер записи: 51
10-10-2013 дата публикации

Method for manufacturing carbon film and plasma cvd method

Номер: US20130264194A1
Автор: Ge Xu, Kazuto Yamanaka, Shogo Hiramatsu, Tsutomu Hiroishi
Принадлежит: Canon Anelva Corp

The present invention provides a method of manufacturing a carbon film and a plasma CVD method capable of performing film formation while controlling the temperature of a substrate as well as film properties. A process chamber according to one embodiment of the present invention includes a holder configured to hold a substrate, magnetic-field producing means configured to produce magnetic fields inside the process chamber, shields configured to suppress film deposition on the magnetic-field producing means, heat dissipating sheets configured to suppress heating of the magnetic-field producing means, and moving means configured to move the magnetic-field producing means. The magnetic-field producing means is characterized in being moved in such a direction as to increase or decrease the volume of a space between the magnetic-field producing means and the holder.

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Номер записи: 52
10-10-2013 дата публикации

METHOD FOR THE PLASMA TREATMENT OF WORKPIECES AND WORKPIECE COMPRISING A GAS BARRIER LAYER

Номер: US20130264303A1
Автор: Andersen Arne, Herbort Michael, Siebels Sonke
Принадлежит: KHS CORPOPLAST GMBH

The method serves for the plasma treatment of workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber top and a lateral chamber wall. The plasma treatment involves depositing a coating on the workpiece. The ignition of the plasma is performed by microwave energy. The coating consists at least of a gas barrier layer and a protective layer. The gas barrier layer contains SiOx and the protective layer contains carbon. The protective is produced from a gas that contains at least a silicon compound and argon. 1. A method for the plasma treatment of a workpiece , in which the workpiece is inserted into a plasma chamber and thereafter , under the action of a negative pressure , a coating is deposited on the workpiece after a plasma is ignited , and in which the plasma is ignited by microwave energy , the coating being composed at least of a gas barrier layer and a protective layer , and the gas barrier layer comprising SiOx and the protective layer comprising carbon , wherein the protective layer is produced from a gas comprising at least one silicon compound and argon.2. The method according to claim 1 , wherein hexamethyldisiloxane is used as a process gas.3. The method according to claim 1 , wherein hexamethyldisilazane is used as a process gas.4. The method according to claim 1 , wherein pulsed microwaves are used to ignite the plasma.5. The method according to claim 1 , wherein process gases are supplied in a substantially constant volume flow over the duration of the creation of the protective layer.6. The method according to claim 1 , wherein carbon is deposited in a content of approximately 30 to 60 elemental percent in the protective layer.7. The method according to claim 1 , wherein an adhesion promoting layer is created between the workpiece and the barrier layer.8. The method according to claim 1 , wherein at least one further noble gas is ...

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Номер записи: 53
24-10-2013 дата публикации

THREE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH INDIVIDUALLY CONTROLLED COIL CURRENTS FROM A SINGLE RF POWER GENERATOR

Номер: US20130278141A1
Автор: Collins Kenneth S., Dorf Leonid, KENNEY JASON A., Lane Steven, Liu Jonathan, NGUYEN ANDREW, Ramaswamy Kartik, Rauf Shahid
Принадлежит:

An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit. 1. A plasma reactor for processing a workpiece , comprising:a reactor chamber comprising a cylindrical side wall and a ceiling;an RF power generator and an impedance match coupled to said RF power generator;three coil antennas having respective driven ends and return ends, the return ends being connected to a common potential;a pair of current branches each comprising respective series and parallel reactance elements, the series reactance element of each of the current branches being coupled between said impedance match and the driven end of a respective one of said coil antennas, the parallel reactance element of each of the current branches being coupled in parallel with a respective one of said coil antennas;a third current branch coupled between said impedance match and the driven end of a third one of said three coil antennas; anda current apportionment controller governing reactances of said parallel reactance elements in accordance with a user-specified apportionment of currents among said coil antennas.2. The reactor of wherein said third current branch comprises a conductor.3. The reactor of wherein each one of said variable parallel reactance elements comprises a variable capacitor.4. The reactor of wherein each one of said series reactance elements comprises a capacitor.5. The reactor of wherein said current apportionment controller comprises:a look-up table storing a sequence of pairs of reactance values of said first and second variable parallel reactance elements.6. The reactor of wherein said sequence of pairs of values defines a linear programming sequence.7. The reactor of further comprising a user interface coupled to said current apportionment controller claim 6 , said user interface adapted to record a ...

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Номер записи: 54
31-10-2013 дата публикации

METHOD FOR DEPOSITING A TRANSPARENT BARRIER LAYER SYSTEM

Номер: US20130287969A1
Автор: Bunk Sebastian, Guenther Steffen, Kuehnel Thomas, Meyer Bjoern, Schiller Nicolas, Straach Steffen
Принадлежит: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

The invention relates to a method for producing a transparent barrier layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas is introduced into the vacuum chamber, and a silicon-containing layer is deposited as intermediate layer by means of a PECVD process. 1. Method for producing a transparent barrier layer system , wherein at least two transparent barrier layers and one transparent intermediate layer arranged between the two barrier layers are deposited on a transparent plastic film in at least one vacuum chamber , characterized in that aluminum is vaporized for the deposition of the barrier layers and at least one first reactive gas is simultaneously admitted into the vacuum chamber , and in that a layer containing silicon is deposited as an intermediate layer by means of a PECVD process.2. Method according to claim 1 , characterized in that the barrier layer and the second layer are alternatingly deposited multiple times.3. Method according to claim 1 , characterized in that oxygen and/or nitrogen is used as a first reactive gas.4. Method according to claim 1 , characterized in that the deposition of the barrier layer occurs in the vacuum chamber in the presence of a plasma.5. Method according to claim 4 , characterized in that a hollow cathode plasma or a microwave plasma is used as a plasma.6. Method according to claim 1 , characterized in that a magnetron plasma or a hollow cathode plasma is used for the PECVD process.7. Method according to claim 1 , characterized in that a precursor containing silicon is admitted into the vacuum ...

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Номер записи: 55
14-11-2013 дата публикации

Plasma processing apparatus and plasma processing method

Номер: US20130302918A1
Автор: Kazuhide Ino, Tadahiro Ohmi, Takahiro Arakawa
Принадлежит: ROHM CO LTD

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).

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Номер записи: 56
21-11-2013 дата публикации

Contamination Removal Apparatus and Method

Номер: US20130306101A1
Автор: Gordon Scott Swanson, Ivin Varghese, Mehdi Balooch
Принадлежит: Rave N P Inc

A substrate dry cleaning apparatus, a substrate dry cleaning system, and a method of cleaning a substrate are disclosed. The substrate dry cleaning system includes a substrate support and a reactive species generator. The reactive species generator includes a first conduit defining a first flow channel that extends to an outlet of the first conduit, the Gullet of the first conduit facing the substrate support, a first electrode, a second electrode facing the first electrode, the first flow channel disposed between the first electrode and the second electrode, a first inert wall disposed between the first electrode and the first flow channel, and a second inert wall disposed between the second electrode and the first flow channel.

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Номер записи: 57
28-11-2013 дата публикации

PROCESS FOR DEPOSITION AND CHARACTERIZATION OF A COATING

Номер: US20130313480A1
Автор: DUBREUIL Marjorie
Принадлежит: VITO NV

Provided herein are processes for depositing a plasma coating on a substrate and coated substrates obtained thereby. More particularly, processes for characterizing a plasma coating on a substrate are provided. The process for depositing a plasma coating includes the step of exposing the substrate to a plasma. The plasma includes at least one coating precursor and one fluorophore other than the coating precursor. 1. A process for characterizing a plasma coating on a substrate , whereby a fluorophore is incorporated in said plasma coating and wherein said plasma coating is characterized in-line by monitoring the fluorescence of said fluorophore.2. The process according to claim 1 , comprising the steps of:a) exposing said substrate to a non-thermal plasma or an afterglow region of said plasma, said plasma or afterglow comprising at least one coating precursor and one fluorophore other than said coating precursor, thereby obtaining a coated substrate wherein the coating of said coated substrate comprises said fluorophore;b) irradiating said coated substrate in-line with electromagnetic radiation suitable for exciting said fluorophore; andc) monitoring the light emitted from said fluorophore present in said coating in-line with the coating process so as to characterize said coating.3. The process according to claim 1 , wherein said process is a continuous process.4. The process according to claim 1 , wherein said coating precursor and fluorophore are comprised in a solution claim 1 , said solution being introduced into said plasma or said afterglow in the form of an aerosol together with a carrier gas.5. The process according to claim 3 , wherein said solution comprises said fluorophore in a concentration ranging between 10% and 100% of the concentration at saturation.6. The process according to claim 1 , wherein step c) comprises characterizing at least one property of said coating selected from the coating thickness and coating homogeneity.7. The process according to ...

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Номер записи: 58
19-12-2013 дата публикации

Microwave power delivery system for plasma reactors

Номер: US20130334964A1
Автор: Christopher John Howard Wort, John Robert Brandon
Принадлежит: Element Six Ltd

(EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors ( 8 ), the microwave power delivery system comprising: a tuner ( 14 ) configured to be coupled to a microwave source ( 4 ) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction ( 18 ) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink ( 20 ), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

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Номер записи: 59
26-12-2013 дата публикации

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

Номер: US20130344245A1
Автор: Chunguang Xia, Douglas Keil, Edward J. Augustyniak, Karl Leeser, Ramesh Chandrasekharan
Принадлежит: Novellus Systems Inc

A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber.

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Номер записи: 60
09-01-2014 дата публикации

Plasma processing apparatus and method

Номер: US20140011365A1
Автор: Naoki Yasui, Norihiko Ikeda, Tooru Aramaki, Yasuhiro Nishimori
Принадлежит: Hitachi High Technologies Corp

To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

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Номер записи: 61
16-01-2014 дата публикации

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR CONTROLLING THE SAME

Номер: US20140014038A1
Автор: Kim Jeonggyu, LEE JANGWOO, Lee Kwangho, Lee MoonKap, Oh Junggeun, Shin Jinhyouk
Принадлежит:

There is disclosed a plasma enhanced chemical vapor deposition apparatus including a chamber in which plasma reaction is performed to provide a functional film to an object received therein, a pallet mechanically and electrically connected with the object, a conveyer to convey the pallet to an inside from an outside of the chamber, and a power supplier to supply an electric power to the pallet, the power supplier comprising a moving contact distant from the pallet when the pallet is conveyed and contacting with the pallet when the pallet is stopped. 1. A plasma enhanced chemical vapor deposition apparatus comprising:a chamber in which plasma reaction is performed to provide a functional film to an object received therein;a pallet mechanically and electrically connected with the object;a conveyer to convey the pallet to an inside from an outside of the chamber; anda power supplier to supply an electric power to the pallet, the power supplier comprising a moving contact distant from the pallet when the pallet is conveyed and contacting with the pallet when the pallet is stopped.2. The apparatus according to claim 1 , the pallet comprises a pallet contact that selectively surface contacts with the moving contact; and a fixing part to fix the object thereto.3. The apparatus according to claim 2 , wherein the moving contact is elastically supported.4. The apparatus according to claim 3 , further comprising:a switch to selectively apply an electric power to the moving contact based on elastic transformation of the moving contact.5. The apparatus according to claim 3 , wherein the power supplier comprises a safety switch to selectively apply an electric power to the moving contact based on a distance between the moving contact and the contact point with the pallet.6. The apparatus according to claim 5 , wherein the safety switch of the power supplier is moved to apply the electric power based on a distance of a safety plate integrally moving with the moving contact and a ...

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Номер записи: 62
16-01-2014 дата публикации

Plasma etching apparatus and plasma etching method

Номер: US20140017900A1
Автор: Satoshi Yamada, Shigeki Doba
Принадлежит: Tokyo Electron Ltd

A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.

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Номер записи: 63
23-01-2014 дата публикации

Spectral reflectometry window heater

Номер: US20140024142A1
Автор: John Christopher Shriner, Kevin Wiederhold, Maja Imamovic
Принадлежит: Texas Instruments Inc

A plasma processing tool for fabricating a semiconductor device on a semiconductor wafer includes an optical window disposed on a plasma chamber, remotely from a plasma region. The window is thermally connected to an electrical heater element capable of maintaining the window at a temperature of at least 30° C. A heater controller provides electrical power to the heater element. During operation of the plasma processing tool, the heater controller provides power to the heater element so as to maintain the window at a temperature of at least 30° C. during at least a portion of a plasma process step in which by-products are produced in the plasma chamber.

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Номер записи: 64
27-02-2014 дата публикации

Deposition of thin films on energy sensitive surfaces

Номер: US20140057453A1
Автор: John Madocks, Walter Seaman
Принадлежит: Individual

A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues.

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Номер записи: 65
06-03-2014 дата публикации

METHOD AND ARRANGEMENT FOR BUILDING METALLIC OBJECTS BY SOLID FREEFORM FABRICATION

Номер: US20140061165A1
Автор: Stempfer Ferdinand
Принадлежит: NORSK TITANIUM COMPONENTS AS

This invention relates to a method and arrangement for manufacturing objects by solid freeform fabrication, especially titanium and titanium alloy objects, wherein the deposition rate is increased by supplying the metallic feed material in the form of a wire and employing two gas transferred arcs, one plasma transferred arc for heating the deposition area on the base material and one plasma transferred arc for heating and melting the feed wire. 2. A method according to claim 1 , whereinthe first plasma transferred arc is formed by a gas tungsten arc welding torch (GTAW-torch) electrically connected to a direct current power source such that the electrode of the GTAW-torch becomes the cathode and the base material becomes the anode, andthe second plasma transferred arc is formed by any conventional plasma transferred arc torch (PTA-torch) electrically connected to a direct current power source such that the electrode of the PTA-torch becomes the cathode and the feed wire of metallic material becomes the anode.3. A method according to claim 1 , wherein the metallic material is titanium or alloyed titanium.4. A method according to claim 1 , wherein the solid freeform fabrication of the object is obtained by characteristic dimensions of the object by:employing a computer assisted design (CAD) tool to form a virtual three dimensional model of the object, dividing the model into a set of virtual parallel layers and further into a set of virtual quasi one-dimensional pieces for each parallel layer to form a virtual vectorized layered model of the object,loading the virtual vectorized layered model of the object into a control system able to regulate the position and movement of the holding substrate, the activation of the first and second plasma transferred arc torch, and the activation of a wire feeding system feeding the feed wire of metallic material,engaging the control system to deposit and fuse a series of quasi one-dimensional pieces of the feed wire of metallic ...

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Номер записи: 66
06-03-2014 дата публикации

Plasma microwave resonant cavity

Номер: US20140062300A1
Автор: Jinyan Zhang, Ruichun Wang, Xianhui Xia
Принадлежит: Yangtze Optical Fibre and Cable Co Ltd

A plasma microwave resonant cavity used for a plasma chemical vapor deposition (PCVD) apparatus comprises a resonant cavity housing and a waveguide device connected with the cavity housing. Two ends of the cavity housing are provided with coaxial through-holes along the axial direction of the cavity. A glass inner liner is arranged through the through-holes at the two ends, and runs through a cavity body and the through holes at the two ends. The glass inner liner comprises a glass cylinder and glass stop rings arranged at the two ends of the glass cylinder. One or two ends of the glass cylinder are provided with external threads. The glass stop rings are connected with the ends of the glass cylinder ( 1 ) by screw holes formed on the glass stop rings.

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Номер записи: 67
03-04-2014 дата публикации

APPARATUS FOR TREATING SUBSTRATE

Номер: US20140090783A1
Автор: Kim Hyung Joon, LEE Seung Pyo
Принадлежит:

The present invention disclosed herein relates to a substrate treating apparatus, and more particularly, to an apparatus for treating a substrate using plasma. Embodiments of the present invention provide substrate treating apparatuses including a chamber having a treating space defined therein, a support member disposed in the chamber to support a substrate, a gas supply unit supplying a gas into the chamber, a plasma source generating plasma from the gas supplied into the chamber, a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space, and a shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber. 1. A substrate treating apparatus comprising:a chamber having a space defined therein;a support member disposed in the chamber to support a substrate;a gas supply unit supplying a gas into the chamber;a plasma source generating plasma from the gas supplied into the chamber;a baffle disposed to surround the support member in the chamber and having through holes to exhaust a gas in the treating space; anda shielding unit preventing an electromagnetic field from an inside of the chamber to an outside of the chamber.2. The substrate treating apparatus of claim 1 , wherein the shielding unit comprises a first shielding member surrounding a peripheral surface of the chamber.3. The substrate treating apparatus of claim 2 , wherein the first shielding member is provided at a height corresponding to the support member.4. The substrate treating apparatus of claim 2 , wherein the first shielding member is provided such that a bottom thereof surrounds the baffle.5. The substrate treating apparatus of claim 2 , further comprising a liner contacting an inner sidewall of the chamber and provided to surround the inside of the chamber.6. The substrate treating apparatus of claim 5 , wherein the first shielding member is provided between the liner and the inner ...

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Номер записи: 68
10-04-2014 дата публикации

ATMOSPHERIC PLASMA TREATMENT OF REINFORCEMENT CORDS AND USE IN RUBBER ARTICLES

Номер: US20140099463A1
Автор: Gillick James Gregory, Siffer Frederic Gerard Auguste
Принадлежит: THE GOODYEAR TIRE & RUBBER COMPANY

The present invention is directed to a method of treating a reinforcement cord, comprising the steps of 1. A method of treating a reinforcement cord , comprising the steps of(A) atomizing a mixture of at least one hydrocarbon sulfide, a low viscosity organic solvent, and a carrier gas to form an atomized mixture;(B) generating an atmospheric pressure plasma from the atomized mixture; and(C) exposing the reinforcement cord to the atmospheric pressure plasma.2. The method of claim 1 , wherein the low viscosity organic solvent is a halogenated hydrocarbon.3. The method of claim 1 , wherein the low viscosity organic solvent is a non-halogenated organic solvent and a gaseous halogenated compound is added to the atomized mixture or the atmospheric pressure plasma.4. The method of claim 1 , wherein the plasma is generated by dielectric barrier discharge.5. The method of claim 1 , wherein the reinforcement cord is a steel reinforcement cord.6. The method of claim 1 , wherein the reinforcement cord is conveyed continuously during exposure to the atmospheric pressure plasma.7. The method of claim 1 , wherein the carrier gas is selected from the group consisting of argon claim 1 , helium claim 1 , neon claim 1 , xenon claim 1 , nitrogen claim 1 , carbon dioxide claim 1 , nitrous oxide claim 1 , carbon monoxide claim 1 , and air.9. The method of claim 1 , wherein the hydrocarbon sulfide is selected from the group consisting of diisobutyl disulfide claim 1 , dioctyl polysulfide claim 1 , di-tertiary nonyl polysulfide claim 1 , di-tertiary butyl polysulfide claim 1 , di-tertiary benzyl polysulfide claim 1 , di-tertiary-dodecyl polysulfide claim 1 , and olefin sulfides.10. The method of claim 1 , wherein the halogenated saturated hydrocarbon is selected from the group consisting of dichloromethane (methylene chloride) claim 1 , trichloromethane (chloroform) claim 1 , carbon tetrachloride claim 1 , trichloroethane claim 1 , chlorobutane claim 1 , methyl chloride claim 1 , allyl ...

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Номер записи: 69
10-04-2014 дата публикации

DEPOSITION METHOD AND DEPOSITION APPARATUS

Номер: US20140099734A1
Автор: INOKUCHI Atsutoshi, MASUDA Shogo, SAITO Takehisa
Принадлежит: TOKYO ELECTRON LIMITED

Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding Hto trisilylamine into the processing container and generating plasma. 1. A method of depositing an insulating film on a substrate , the method comprising:providing a deposition apparatus including a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container; and{'sub': '2', 'depositing an insulating film that includes SiN on the substrate by supplying a gas formed by adding Hto trisilylamine into the processing container and generating plasma in the processing space.'}2. The method of claim 1 , further comprising claim 1 , after the depositing of the insulating film claim 1 , nitriding the insulating film by supplying a gas including Nand generating plasma.3. The method of claim 2 , wherein the insulating film is deposited by repeating the depositing and the nitriding plural times.4. The method of claim 1 , wherein during the depositing of the insulating film claim 1 , a pressure within the processing container is controlled to be 400 mTorr or more.5. The method of claim 1 , wherein the substrate includes a layered structure in which a first magnetic layer and a second magnetic layer are stacked with a tunnel barrier layer interposed ...

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Номер записи: 70
07-01-2021 дата публикации

Cleaning method and plasma processing apparatus

Номер: US20210001383A1
Автор: Masahiro Yamazaki
Принадлежит: Tokyo Electron Ltd

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

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Номер записи: 71
01-01-2015 дата публикации

ISOLATION OF MICROWAVE SOURCES THROUGH BELLOWS

Номер: US20150002019A1
Автор: Johnston Benjamin M., KURITA Shinichi
Принадлежит: Applied Materials, Inc.

A bellows which forms a flexible coupling between the lid of a processing chamber and an antenna feed through. One embodiment provides an apparatus comprising a chamber body having a chamber lid, a feed through extending through the chamber lid, an antenna coupled to and extending through the feed through to an internal volume of the chamber body, and a bellows comprising a first flange, the first flange coupled to the feed through, a second flange, the second flange coupled to the chamber lid, and a center portion extending between the first flange and the second flange. 1. An apparatus , comprising:a chamber body having a chamber lid;a feed through extending through the chamber lid;an antenna coupled to and extending through the feed through to an internal volume of the chamber body; and a first flange, the first flange coupled to the feed through;', 'a second flange, the second flange coupled to the chamber lid; and', 'a center portion extending between the first flange and the second flange., 'a bellows comprising2. The apparatus of claim 1 , wherein the feed through is not coupled directly to the chamber lid.3. The apparatus of claim 1 , wherein the bellows forms a vacuum seal between the feed through and the chamber lid.4. The apparatus of claim 1 , wherein the center portion comprises a flexible region adapted to expand in response a tensile force between the first and second flanges and contract in response to a compressive force between the first and second flanges.5. The apparatus of claim 1 , further comprising a dielectric layer disposed around the antenna claim 1 , wherein the dielectric layer is coupled to the feed through.6. The apparatus of claim 5 , wherein the dielectric layer forms a vacuum seal with the feed through.7. The apparatus of claim 5 , further comprising an end cap coupled to the feed through claim 5 , the end cap forming a vacuum seal with the feed through and the dielectric layer.8. The apparatus of claim 1 , further comprising:a ...

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Номер записи: 72
06-01-2022 дата публикации

PLASMA PROCESSING APPARATUS AND CONTROL METHOD

Номер: US20220005739A1
Автор: IKEDA Taro, Osada Yuki
Принадлежит:

A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors. 1. A method of controlling plasma , the method comprising: N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and', 'M sensors configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N, and, 'providing a plasma processing apparatus includingcontrolling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the sensors.2. The method according to claim 1 , wherein the M sensors are provided in correspondence with the N microwave introducing radiators claim 1 , respectively claim 1 ,the method further comprising:controlling at least one of the power and phase of the microwaves introduced from each of the N microwave introducing radiators based on at least one of the electron density Ne and the electron temperature Te of the plasma monitored by each of the M sensors provided in ...

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Номер записи: 73
07-01-2016 дата публикации

ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS

Номер: US20160002783A1
Автор: LEE Sang In
Принадлежит:

Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules. 1. A method of performing atomic layer deposition , comprising:generating radicals of a gas or a mixture of gases;injecting the generated radicals onto a surface of a substrate to increase a number of nucleation sites on the substrate by placing the surface of the substrate in a reactive state;injecting a first source precursor onto the surface of the substrate placed in the reactive state, adsorption of the first source precursor on the substrate facilitated by increase in the number of nucleation sites; andinjecting a first reactant precursor onto the substrate injected with the first source precursor to deposit a layer on the surface of the substrate.2. The method of claim 1 , wherein the gas or mixture of gases comprise inert gas.3. The method of claim 2 , wherein the inert gas is Argon.4. The method of claim 1 , further comprising:injecting the generated radicals onto the surface of the substrate deposited with the layer;injecting a second source precursor onto the surface of the substrate deposited with the layer; andinjecting a second reactant precursor onto the surface of the substrate deposited with the layer to deposit another layer.5. The method of claim 4 , wherein the second source precursor is a same material as the first source precursor claim 4 , ...

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Номер записи: 74
07-01-2016 дата публикации

Decorative, jet-black coating

Номер: US20160002792A1
Автор: Franz Widowitz, Manfred Wurzer, Sebastien Guimond
Принадлежит: Oerlikon Surface Solutions AG Truebbach

A jet-black coating that resists wear; first, at least one DLC layer with a high degree of hardness is applied to a component and then a gradient layer, whose density decreases in the direction toward the surface, is applied to this DLC layer. By means of the refraction index progression that this produces in the gradient layer, the gradient layer functions as a reflection-reducing layer.

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Номер записи: 75
05-01-2017 дата публикации

COMPOSITES COMPRISING NANOSTRUCTURED DIAMOND AND METAL BORIDE FILMS AND METHODS FOR PRODUCING SAME

Номер: US20170002457A1
Автор: Catledge Shane A., Johnston Jamin, Vohra Yogesh K.
Принадлежит:

Composites having a substrate, a diamond film, and a metal boride film disposed between the substrate and the diamond film, together with methods for producing the composites. 1. A composite comprising:a) a substrate;b) a diamond film having a surface roughness of from about 5 nm to about 100 nm; andc) an at least partially continuous metal boride layer disposed between a surface of the substrate and the diamond film.2. The composite of claim 1 , having a hardness of at least about 50 GPa.3. (canceled)4. The composite of claim 1 , wherein the substrate comprises cobalt or an alloy thereof.5. (canceled)6. (canceled)7. The composite of claim 1 , wherein the substrate further comprises one or more of chromium claim 1 , molybdenum claim 1 , tungsten claim 1 , titanium claim 1 , aluminum claim 1 , vanadium claim 1 , nickel claim 1 , iron claim 1 , manganese claim 1 , tungsten carbide claim 1 , carbon claim 1 , or a combination thereof.8. The composite of claim 1 , wherein the substrate comprises a metal carbide alloy.9. The composite of claim 8 , wherein the metal carbide alloy comprises one or more of tungsten carbide claim 8 , titanium carbide claim 8 , or a combination thereof.10. The composite of claim 1 , wherein the diamond film is positioned over at least a portion of the at least partially continuous metal boride layer.11. (canceled)12. The composite of claim 1 , wherein the diamond film is substantially free of a graphitic carbon.13. The composite of claim 1 , wherein the diamond film comprises a nanostructured diamond film.14. (canceled)15. The composite of claim 1 , wherein the diamond film is substantially free of an elemental metal.16. (canceled)17. (canceled)18. The composite of claim 1 , wherein the at least partially continuous metal boride layer comprises cobalt boride.19. (canceled)20. (canceled)21. The composite of claim 1 , wherein the at least partially continuous metal boride layer is conformal to the surface of the substrate.22. The composite of ...

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Номер записи: 76
05-01-2017 дата публикации

Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity

Номер: US20170002465A1
Автор: Shaikh Fayaz, Tan Taide
Принадлежит:

A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring. The annular width of the silicon ring enlarges a surface area of the semiconductor wafer that is exposed and shifts non-uniformity effects of deposition materials over the semiconductor wafer from an edge of the semiconductor wafer to an outer edge of the silicon ring. 1. A chamber for processing a semiconductor wafer , the processing of the semiconductor wafer includes performing deposition of a material over a surface of the semiconductor wafer , the chamber comprising ,a pedestal for supporting the semiconductor wafer;a silicon ring surrounding the semiconductor wafer and disposed over the pedestal, the silicon ring having a ring thickness that approximates a semiconductor wafer thickness, the silicon ring has an annular width that extends a process zone over the semiconductor wafer to an extended process zone that is over the semiconductor wafer and the silicon ring;a confinement ring surrounding the silicon ring and disposed on the pedestal, the confinement ring being defined from a dielectric material;a showerhead having a central showerhead area and an extended showerhead area, the central ...

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Номер записи: 77
05-01-2017 дата публикации

MICROWAVE PLASMA AND ULTRAVIOLET ASSISTED DEPOSITION APPARATUS AND METHOD FOR MATERIAL DEPOSITION USING THE SAME

Номер: US20170002469A1
Автор: Grill Alfred, Nguyen Son V., Priyadarshini Deepika
Принадлежит:

A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided. 1. A method for depositing a material on a substrate , the method comprising:feeding a precursor gas into a processing space in which the substrate is arranged;feeding a reactive gas into the processing space;operating an ultraviolet radiation assembly to emit ultraviolet radiation into the processing space in combination with operating a microwave radiation assembly to emit microwave radiation into the processing space to excite at least the reactive gas; anddepositing the material on the substrate in the processing space from a reaction of the excited reactive gas and the precursor gas.2. The method according to claim 1 , operating a gas feed assembly comprising a plurality of conduits, wherein each of the plurality of conduits comprises a coaxial inner conduit and outer conduit, wherein the inner conduit defines a port through which the precursor gas or the reactive gas is fed into the processing space,', 'wherein the operating the gas feed assembly comprises moving the inner conduit relative to the outer conduit to position the port at a variable position in the processing space ...

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Номер записи: 78
02-01-2020 дата публикации

Film formation method

Номер: US20200002809A1
Автор: Haruhito UCHIDA, Susumu Ozawa, Tatsuyuki Nakatani, Yasuhiro Fujii, Yuichi Imai
Принадлежит: KAKE EDUCATIONAL INSTITUTION, Okayama University NUC, Strawb Inc

A film formation method is provided with a step for disposing a non-electroconductive long thin tube 102 in a chamber 101 in which the internal pressure thereof is adjustable, generating a plasma inside the long thin tube 102 in a state in which a starting material gas including a hydrocarbon is supplied, and forming a diamond-like carbon film on an inner wall surface of the long thin tube 102. The long thin tube 102 is disposed in the chamber 101 in a state in which a discharge electrode 125 is disposed in one end part of the long thin tube 102 and the other end part is open. An alternating-current bias is intermittently applied between the discharge electrode 125 and a counter electrode 126 provided so as to be separated from the long thin tube 102.

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Номер записи: 79
01-01-2015 дата публикации

PLASMA SOURCE AND METHODS FOR DEPOSITING THIN FILM COATINGS USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Номер: US20150004330A1
Автор: MASCHWITZ Peter
Принадлежит:

The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods. 2. The method of claim 1 , wherein the space separating the first hollow cathode and the second hollow cathode comprises a dark space.3. The method of claim 2 , wherein the first gas is not energized claim 2 , partially decomposed claim 2 , or fully decomposed in the dark space.4. The method of claim 2 , wherein the energizing claim 2 , partially decomposing claim 2 , or fully decomposing of the first gas is proximate to the substrate.5. The method of claim 2 , wherein the first gas flows through the dark space towards the substrate.6. The method of claim 1 , wherein a second gas is provided directly into a region of electron oscillation within at least one of the first hollow cathode and the second hollow cathode.7. The method of claim 1 , wherein the first hollow cathode and the second hollow cathode each comprise two facing surfaces at the same electric potential claim 1 , and wherein a second gas flows along the two facing surfaces of the first hollow cathode and the second hollow cathode.8. The method of claim 1 , wherein each of the first hollow cathode and the second hollow cathode is comprised of a porous material claim 1 , andfurther wherein a second gas is provided through the pores of the porous material.9. The method of claim 1 , wherein the first gas is provided through a manifold or tube.10. The method of claim 1 , wherein a mixture comprising the first gas and a second gas is provided into the space separating the first hollow cathode and the second hollow cathode.11. The ...

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Номер записи: 80
01-01-2015 дата публикации

METHOD AND DEVICE FOR PASSIVATING SOLAR CELLS WITH AN ALUMINIUM OXIDE LAYER

Номер: US20150004331A1
Автор: Dippell Torsten, Dullweber Thorsten, Harder Nils-Peter, Hohn Oliver, Roos Björn, Seibert Michael
Принадлежит: Singulus Technologies AG

A method for coating a substrate with an AlOlayer, in particular an AlOlayer, comprising the following method steps: (a) providing an inductively coupled plasma source (ICP source) having a reaction chamber and at least one RF inductor, (b) introducing an aluminium compound, preferably trimethylaluminium (TMA) into the ICP source, (c) introducing oxygen and/or an oxygen compound as reactive gas into the ICP source and inductively coupling of energy into the ICP source for forming a plasma, and (d) depositing the AlOlayer on the substrate. The invention also relates to a coating assembly for depositing thin layers on a substrate, in particular for carrying out the above method. The coating assembly comprises an inductively coupled plasma source (ICP) having a reaction chamber and at least one RF inductor, a substrate holder for arranging the substrate in the reaction chamber and channels for introducing the aluminium compound and a reactive gas in the ICP source. The substrate is arranged in the reaction chamber such that the substrate surface to be coated faces the ICP source. 1. Method for coating a substrate with an AlOlayer , in particular an AlOlayer , comprising the following method steps:(a) providing an inductively coupled plasma source (ICP source) having a reaction chamber and at least one RF inductor,(b) introducing an aluminium compound into the ICP source,(c) introducing oxygen and/or an oxygen compound as reactive gas into the ICP source and inductively coupling of energy into the ICP source for forming a plasma, and{'sub': 'x', '(d) depositing the AlOlayer on the substrate.'}2. The method according to claim 1 , wherein the substrate of comprises silicon.3. The method according to claim 1 , wherein the plasma density is at least 1×10ions/cm.4. The method according to claim 1 , wherein the ion energy ranges from between about 1 to about 30 eV.5. The method according to claim 1 , wherein there is a vacuum of 10to 10mbar claim 1 , in the reaction chamber.6 ...

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Номер записи: 81
07-01-2021 дата публикации

Diamond-like carbon synthesized by atmospheric plasma

Номер: US20210002759A1
Автор: Jinqiu Zhang, Masahiro Osugi, Xiaobo Huang
Принадлежит: Samu Technology LLC

A system includes a structure including an upper chamber linked to a lower chamber, the upper chamber including a gas inlet configured to enable a gas to enter the upper chamber, the lower chamber including a plasma outlet, a microwave generator configured to deliver a microwave to the upper chamber causing atoms in the gas to ionize to generate a charged particle microwave plasma, a hollow cathode centrally positioned within the lower chamber and an anode surrounding an interior wall of the lower chamber, and a power source for generating power, the power flowing between the anode and the hollow cathode causing atoms in the gas to ionize to generate a charged particle hollow cathode plasma.

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Номер записи: 82
05-01-2017 дата публикации

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Номер: US20170004956A1
Автор: Ishida Katsuhiro, Kondo Takashi, KUBOTA Toru, Yasuda Kenta
Принадлежит:

A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil. 1. A plasma processing method comprising: a chamber;', 'a lower electrode disposed in the chamber;', 'an upper electrode disposed in the chamber and facing the lower electrode;', 'a focus ring disposed in the chamber and surrounding a peripheral edge of the lower electrode; and', 'an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode;, 'preparing a plasma processing apparatus, the plasma processing apparatus comprisingplacing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring;introducing process gas into the chamber;applying high-frequency power across the upper electrode and the lower electrode to generate plasma of the process gas; andgenerating a magnetic field by supplying a current to the annular coil to level an interface of a plasma sheath on an upper portion of the substrate with the interface of the plasma sheath on an upper portion of the focus ring.2. The plasma processing method according to claim 1 ,wherein the leveling of the interface of the plasma sheath reduces the ...

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Номер записи: 83
04-01-2018 дата публикации

SYSTEMS AND METHODS FOR TAILORING ION ENERGY DISTRIBUTION FUNCTION BY ODD HARMONIC MIXING

Номер: US20180005802A1
Автор: Chen Zhigang, Holland John Patrick, Marakhtanov Alexei
Принадлежит:

Systems and methods for controlling a process applied to a substrate within a plasma chamber are described. The systems and methods include generating and supplying odd harmonic signals and summing the odd harmonic signals to generate an added signal. The added signal is supplied to an electrode within the plasma chamber for processing the substrate. The use of odd harmonic signals facilitates high aspect ratio etching of the substrate. 1. A system comprising: [{'sup': 'th', 'an odd harmonic power supply configured to generate an nharmonic RF signal, wherein n is an odd number;'}, {'sup': th', 'th, 'an impedance matching circuit coupled to the odd harmonic power supply, wherein the impedance matching circuit is configured to output an nmodified harmonic RF signal upon receiving the nharmonic RF signal;'}, {'sup': th', 'th, 'a frequency multiplier coupled to the impedance matching circuit, wherein the frequency multiplier is configured to receive the nmodified harmonic RF signal to output an (n+2)harmonic RF signal;'}, {'sup': th', 'th, 'a variable adjuster coupled to the frequency multiplier, wherein the variable adjuster is configured to modify a variable of the (n+2)harmonic RF signal to output an adjusted (n+2)harmonic RF signal;'}, {'sup': th', 'th, 'an adder coupled to the variable adjuster and the impedance matching circuit, wherein the adder is configured to add the nmodified harmonic RF signal and the adjusted (n+2)harmonic RF signal to provide an added RF signal; and'}], 'a radiofrequency (RF) generator includinga plasma chamber coupled to the RF generator, wherein the plasma chamber is configured to receive the added RF signal from the adder to provide power to an electrode within the plasma chamber.2. The system of claim 1 , wherein the adder is configured to add the nmodified harmonic RF signal and the adjusted (n+2)harmonic RF signal to generate an approximation of a square wave pulse claim 1 , wherein the square wave pulse is a digital pulse that is a ...

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Номер записи: 84
04-01-2018 дата публикации

SELECTIVE ATOMIC LAYER DEPOSITION WITH POST-DOSE TREATMENT

Номер: US20180005814A1
Автор: Karim Ishtak, KUMAR Purushottam, LaVoie Adrien, Pasquale Frank L., Qian Jun, van Schravendijk Bart J.
Принадлежит:

Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation. 1. A method of processing a patterned substrate in a process chamber , the method comprising:(a) providing the patterned substrate having one or more features;(b) exposing the patterned substrate to a silicon-containing precursor under conditions allowing the silicon-containing precursor to adsorb onto surfaces of the one or more features, thereby forming an adsorbed layer of the silicon-containing precursor over the patterned substrate;(c) before exposing the patterned substrate to a reactant to form a silicon-containing film and after exposing the patterned substrate to the silicon-containing precursor, performing a post-dose treatment operation to preferentially remove the adsorbed layer at tops of the one or more features; and(d) exposing the patterned substrate to the reactant and igniting a first plasma to form the silicon-containing film over the patterned substrate.2. The method of claim 1 , wherein performing the post-dose treatment operation comprises exposing the patterned substrate to a gas selected from the group consisting of nitrogen claim 1 , argon claim 1 , hydrogen claim 1 , ammonia claim 1 , helium claim 1 , and CH claim 1 , wherein x is an integer between and including 1-5 and y is an integer between and including 4-16.3. The method of claim 2 , wherein performing the post-dose treatment operation further comprises igniting a second plasma at a plasma power less than about 6 kW.4. The method of claim 3 , wherein performing the post- ...

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Номер записи: 85
07-01-2021 дата публикации

PLASMA ETCHING METHOD AND PLASMA PROCESSING DEVICE

Номер: US20210005427A1
Автор: Hirose Jun, SAWATAISHI Masayuki
Принадлежит:

A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically. 116-. (canceled)17. A plasma etching method , the method comprising: 'wherein the substrate support has a lower electrode and an electrostatic chuck installed on the lower electrode and is installed in a chamber of the plasma processing device, and the substrate is arranged on the electrostatic chuck and in a region surrounded by a focus ring;', 'mounting a substrate on a substrate support of a plasma processing device,'} 'wherein the plurality of electrodes includes a first electrode extending below a central region of the substrate and a second electrode extending below an edge region of the substrate, and the plurality of voltages are determined such that ions from plasma are substantially vertically incident on both the central region and the edge region while the substrate is held by the electrostatic chuck; and', 'determining a plurality of voltages respectively applied to a plurality of electrodes of the electrostatic chuck,'}etching the substrate with the ions from the plasma generated in the chamber while the plurality of voltages is respectively applied to the plurality of electrodes.18. The method of claim 17 , wherein the ...

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Номер записи: 86
02-01-2020 дата публикации

SUPPORT ASSEMBLY

Номер: US20200006054A1
Автор: Chang Mei, HUSTON Joel M., KAO Chien-Teh, YUAN XIAOXIONG
Принадлежит:

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body. 1. A processing system , comprising:a transfer chamber;a plurality of load lock chambers in selective communication with the transfer chamber; anda plurality of processing chambers coupled to and in selective communication with the transfer chamber, wherein one of the plurality of processing chambers comprises an etch chamber adapted to remove native oxides from a substrate prior to processing in a remainder of the plurality of processing chambers.2. The processing system of claim 1 , wherein one of the remainder of the plurality of processing chambers comprises a deposition chamber.3. The processing system of claim 2 , wherein the deposition chamber comprises a CVD chamber adapted to form a film on the substrate.4. The processing system of ...

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Номер записи: 87
08-01-2015 дата публикации

CO2 RECYCLING DEVICE AND CO2 RECYCLING SYSTEM

Номер: US20150007773A1
Автор: Ohmae Nobuo, Toyoshima Akihiko
Принадлежит: T-SUPPORT CO., LTD.

To provide a COrecycling device which is compact and with which electricity consumption can be reduced. The invention is a device for manufacturing multilayer carbon nanotubes, carbon onions or nano-carbons, using a microwave plasma CVD method, taking the COgas within a carbon monoxide-containing gas as the carbon source. The device comprises a microwave oscillator, a microwave waveguide and a reaction tube provided within the microwave waveguide, and a gas inlet pipe and an exhaust pipe are configured from the reaction tube which returns within the microwave waveguide and a ceramic-type heater provided on the inner wall of the gas inlet pipe. Then, microwave plasma is generated at the position where the reaction tube returns, and the multilayer carbon nanotube, carbon onion or nano-carbon formed is adhered to the inner wall of the exhaust pipe. 1. A COrecycling device that synthesizes either carbon nanotube , carbon onion and/or nano-carbons with using microwave plasma CVD of COgas which is contained in hydrocarbon gases , the device comprising:a microwave generator;a microwave guide;a reaction tube installed in the above mentioned microwave guide, which is designed to turn back the gas from the gas inlet to the vacuum evacuation part inside the wave guide; anda ceramics heater at the position of gas inlet,wherein the device generates the plasma at the reaction tube to produce and deposit multi-wall carbon nanotube, carbon onion and/or nano-carbons.2. A COrecycling device that synthesizes either carbon nanotube , carbon onion and/or nano-carbons with using microwave plasma CVD of COgas which is contained in hydrocarbon gases , the device comprising:a microwave generator;a coaxial microwave guide;a reaction tube connected to the above mentioned coaxial microwave guide, which is designed to turn back the gas from the gas inlet to the vacuum evacuation part inside the wave guide; anda ceramics heater at the position of gas inlet,wherein the device generates the plasma ...

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Номер записи: 88
08-01-2015 дата публикации

PLASMA PROCESSING DEVICE AND HIGH-FREQUENCY GENERATOR

Номер: US20150007940A1
Автор: Funazaki Kazunori, KANEKO Kazushi, KATO Hideo
Принадлежит: TOKYO ELECTRON LIMITED

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components. 1. A plasma processing device which processes an object to be processed using plasma , the plasma processing device comprising:a processing container configured to perform a processing by the plasma therein; anda plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves, and the plasma generation mechanism being configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator,wherein the high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator, the signal having a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and having reduced different frequency components.2. The plasma processing device of claim 1 , wherein the high-frequency generator includes an isolator configured to transmit a frequency signal unidirectionally from the high-frequency ...

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Номер записи: 89
08-01-2015 дата публикации

HEAT TRANSFER CONTROL IN PECVD SYSTEMS

Номер: US20150010718A1
Автор: Chaudhary Devendra, JOST Stephan, Klindworth Markus
Принадлежит:

The invention relates to a method for manufacturing thin films on substrates, the method comprising providing a deposition system, said system comprising an inner non-airtight enclosure for containing at least one substrate and an outer airtight chamber completely surrounding said enclosure, and providing at least one substrate in the inner non-airtight enclosure. The inner non-airtight enclosure is maintained at a pressure lower than the pressure within said outer airtight chamber, and a backfilling gas comprising at least hydrogen or helium is introduced into the outer airtight chamber volume. 1. Method for manufacturing thin films on substrates , the method comprising:providing a deposition system, said system comprising an inner non-airtight enclosure for containing at least one substrate and an outer airtight chamber completely surrounding said enclosure, and providing at least one substrate in the inner non-airtight enclosure,maintaining said inner non-airtight enclosure at a pressure lower than or substantially equal to the pressure within said outer airtight chamber,introducing a backfilling gas comprising at least hydrogen or helium into the outer airtight chamber volume.2. Method according to claim 1 , wherein a pressure difference between the inner non-airtight enclosure and the outer airtight chamber of less than 1 mbar claim 1 , particularly 0.05-1 mbar claim 1 , further particularly 0.1 mbar is established.3. Method according to one of or claim 1 , wherein the inner non-airtight enclosure comprises a PECVD parallel plate reactor system claim 1 , a pressure in the range 0.3-50 mbar claim 1 , particularly 2-40 mbar or 0.3-20 mbar being established in the inner non-airtight enclosure during deposition and RF power between 500 W and 6 kW is provided to the parallel plate reactor system in the case of a 1.4 msubstrate claim 1 , the RF power being scaled linearly for other substrate areas.43. Method according to one of - claims 1 , wherein the substrate is ...

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Номер записи: 90
12-01-2017 дата публикации

METHODS OF FABRICATING SYNTHETIC DIAMOND MATERIALS USING MICROWAVE PLASMA ACTIVATED CHEMICAL VAPOUR DEPOSITION TECHNIQUES AND PRODUCTS OBTAINED USING SAID METHODS

Номер: US20170009376A1
Автор: BRANDON John, COE STEVEN, Friel Ian, Khan Rizwan, Markham Matthew, ROBERTSON KATHARINE, SCARSBROOK GEOFFREY, Twitchen Daniel, WILMAN JONATHAN, Wort Christopher
Принадлежит: ELEMENT SIX TECHNOLOGIES LIMITED

A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material. 1. A single crystal CVD diamond layer comprising:a total nitrogen concentration as measures by secondary ion mass spectrometry of no more than 2 ppm; and{'sup': '2', 'an area of at least 324 mm.'}2. A single crystal CVD diamond layer according to claim 1 , wherein the total nitrogen concentration is no more than 1.5 ppm claim 1 , 1.0 ppm claim 1 , 0.8 ppm claim 1 , 0.5 ppm 0.1 ppm claim 1 , 0.05 ppm claim 1 , or 0.01 ppm.3. A single crystal CVD diamond layer according to claim 1 , wherein the area of the single crystal CVD diamond layer is at least 361 mm claim 1 , 400 mm claim 1 , 484 mm claim 1 , 625 mm claim 1 , 900 mm claim 1 , 1600 mm claim 1 , or 2500 mm.4. A single crystal CVD diamond layer according to claim 1 , wherein the single crystal CVD diamond layer has a thickness of at least 30 micrometers claim 1 , 60 micrometers claim 1 , 100 micrometers claim 1 , 150 micrometers claim 1 , 200 micrometers claim 1 , 250 micrometers claim 1 , 300 micrometers claim 1 , or 500 micrometers.5. A single crystal CVD diamond layer according to claim 1 , wherein the single crystal CVD diamond layer is comprises a plurality of inter-crossing dislocation lines.6. A single crystal CVD diamond layer according to claim 1 , wherein the single crystal CVD diamond layer exhibit one or both of the following characteristics:{'sup': −1', '−1', '−1', '−1, '(i) an optical absorption coefficient at a wavelength of 1.064 μm of less than 0.09 cm, 0.05 cm, 0.02 cm, or 0.01 cm.'}{'sup': −1', '−1', '−1', '−1 ...

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Номер записи: 91
14-01-2021 дата публикации

SPUTTERING APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20210010127A1
Автор: Cho Hyun, KIM Ki Woong, Oh Se Chung, Seo Hyeon Woo, Shin Hee Ju
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided. 1. A sputtering apparatus comprising:a chamber;a stage inside the chamber, the stage configured to receive a substrate thereon;a first sputter gun configured to provide a sputtering source to an inside of the chamber;a first RF source configured to provide a first power to the first sputter gun, the first power having a first frequency; anda second RF source configured to provide a second power to the first sputter gun, the second power having a second frequency lower than the first frequency.2. The sputtering apparatus of claim 1 , further comprising:a second sputter gun spaced apart from the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber;a third RF source configured to provide a third power to the second sputter gun, the third power having the first frequency; anda fourth RF source configured to provide a fourth power to the second sputter gun, the fourth power having the second frequency.3. The sputtering apparatus of claim 2 , whereinthe first sputter gun comprises a first target at a lower portion thereof,the second sputter gun comprises a second target at a lower portion thereof, andthe first target and the second target comprise a same material.4. The sputtering apparatus of claim 1 , further comprising:a second sputter gun adjacent to the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber,wherein the first RF source is further configured ...

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Номер записи: 92
27-01-2022 дата публикации

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

Номер: US20220028664A1
Автор: Kim Daehyun
Принадлежит: SEMES CO., LTD.

A substrate treating apparatus is disclosed. The apparatus includes a process chamber having a treating space defined therein, a support unit for supporting a substrate in the treating space, a gas supply unit for supplying process gas into the treating space, and an RF power source for supplying an RF signal to excite the process gas to a plasma state, wherein the support unit includes an edge ring surrounding the substrate, a coupling ring disposed below the edge ring and including an electrode therein, and an edge impedance control circuit connected to the electrode wherein the edge impedance control circuit includes a harmonics control circuit unit for controlling harmonics caused by the RF power source, and an ion flux control circuit unit for controlling an ion flux in an edge region of the substrate. 1. A substrate treating apparatus comprising:a process chamber having a treating space defined therein;a support unit for supporting a substrate in the treating space;a gas supply unit for supplying process gas into the treating space; andan RF power source for supplying an RF signal to excite the process gas to a plasma state, an edge ring surrounding the substrate;', 'a coupling ring disposed below the edge ring and including an electrode therein; and', 'an edge impedance control circuit connected to the electrode,', a harmonics control circuit unit for controlling harmonics caused by the RF power source; and', 'an ion flux control circuit unit for controlling an ion flux in an edge region of the substrate., 'wherein the edge impedance control circuit includes], 'wherein the support unit includes2. The substrate treating apparatus of claim 1 , wherein the harmonics control circuit unit includes a first variable capacitor claim 1 ,wherein the ion flux control circuit unit includes a second variable capacitor.3. The substrate treating apparatus of claim 2 , wherein the ion flux control circuit unit further includes at least one band stop filter.4. The substrate ...

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Номер записи: 93
27-01-2022 дата публикации

PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Номер: US20220028666A1
Автор: Hirayama Masaki
Принадлежит:

A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction. 113-. (canceled)14. A plasma processing apparatus comprising:a processing container;a stage provided in the processing container;a dielectric plate provided above the stage via a space in the processing container;an upper electrode having flexibility and being provided above the dielectric plate, the upper electrode being configured to provide a gap between the dielectric plate and the upper electrode;an introduction part of radio frequency waves that are VHF waves or UHF waves, the introduction part being provided at a horizontal end portion of the space;a driving shaft that is a central axial line of the processing container extending in a vertical direction and is coupled to the upper electrode on the central axial line including a center of the stage; andan actuator configured to move the driving shaft in the vertical direction.15. The plasma processing apparatus of claim 14 , further comprising:an elastic member interposed between a peripheral edge portion of the dielectric plate and the processing container,wherein the peripheral edge portion of the dielectric plate is elastically supported between the processing container and the upper ...

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Номер записи: 94
12-01-2017 дата публикации

Plasma processing device

Номер: US20170011890A1
Автор: Kenetsu Yokogawa, Masaru Izawa, Tooru Aramaki
Принадлежит: Hitachi High Technologies Corp

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

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Номер записи: 95
12-01-2017 дата публикации

TRANSPARENT NANOCRYSTALLINE DIAMOND COATINGS AND DEVICES

Номер: US20170011914A1
Автор: Khan Adam, SUMANT Anirudha V.
Принадлежит: UCHICAGO ARGONNE, LLC

A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz. 1. A method for coating a substrate , comprising:producing a plasma ball using a microwave plasma source in the presence of a mixture of gases, the plasma ball having a diameter;disposing the plasma ball at a first distance from the substrate, the substrate maintained at a first temperature; andmaintaining the plasma ball at the first distance from the substrate for a first time;depositing a diamond coating on the substrate, the diamond coating having a thickness,wherein, the diamond coating has an optical transparency of greater than about 80 percent.2. The method of claim 1 , wherein the diamond coating includes nanocrystalline diamond.3. The method of claim 1 , wherein the substrate and or thin film has a thickness less than a thickness threshold claim 1 , the thickness enabling the substrate to have an optical transparency of greater than 80%.4. The method of claim 3 , wherein the substrate includes at least one of gallium nitride claim 3 , aluminum gallium nitride claim 3 , gallium arsenide claim 3 , germanium claim 3 , silicon claim 3 , silicon nitride and silicon carbide.5. The method of claim 1 , wherein the microwave plasma source has a frequency of about 915 MHz.6. The method of claim 1 , wherein the diameter of the plasma ball is the range of about 15 cms to about 30 cms.7. The method of claim 3 , ...

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Номер записи: 96
15-01-2015 дата публикации

Microwave plasma processing apparatus

Номер: US20150013913A1
Автор: Jun Yoshikawa, Toshihiko Iwao
Принадлежит: Tokyo Electron Ltd

A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.

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Номер записи: 97
14-01-2016 дата публикации

FILM FORMING DEVICE, FILM FORMING METHOD, AND FILM FORMING PROGRAM

Номер: US20160013023A1
Автор: KANADA Hideki, KOUSAKA Hiroyuki, SHINODA Kentaro, TAKAOKA Yasuyuki, TAKI Kazunari
Принадлежит:

A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes 1. A film forming device comprising:a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece;a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, anda controller configured to control the microwave supplying unit and the negative voltage applying unit,wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer,wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes,wherein, while supplying of the microwaves by the microwave supplying unit, the controller controls the negative voltage applying unit so that the sheath thickness changes by changing a voltage value of the negative bias voltage to be applied to the workpiece, andwherein, while supplying of the microwaves by the microwave supplying unit, the controller controls the negative ...

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Номер записи: 98
14-01-2016 дата публикации

Apparatus For Generating Plasma Using Dual Plasma Source And Apparatus For Treating Substrate Including The Same

Номер: US20160013029A1
Автор: CHAE Hee Sun, Cho Jeong Hee, Kim Hyun Jun, Lee Han Saem, Lee Jong Sik
Принадлежит:

The present invention relates to an apparatus for generating plasma using a dual plasma source and a substrate treatment apparatus including the same. A plasma generation apparatus according to an embodiment of the present invention includes: an RF power supply configured to supply an RF signal; a plasma chamber configured to provide a space in which plasma is generated; a first plasma source installed at one part of the plasma chamber to generate plasma; and a second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source including: a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; and a plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moved through the gas passage to a plasma state. 1. A plasma generation apparatus comprising:an RF power supply configured to supply an RF signal;a plasma chamber configured to provide a space in which plasma is generated;a first plasma source installed at one part of the plasma chamber to generate plasma; anda second plasma source installed at the other part of the plasma chamber to generate plasma, the second plasma source comprising:a plurality of insulating loops formed along a circumference of the plasma chamber, wherein a gas passage through which a process gas is injected and moved to the plasma chamber is provided in each insulating loop; anda plurality of electromagnetic field appliers coupled to the insulating loops and receiving the RF signal to excite the process gas moving through the gas passage to a plasma state.2. The plasma generation apparatus of claim 1 , wherein the electromagnetic field applier comprises:a core formed of a magnetic material and surrounding the insulating loop; anda coil wound on the core.3. The plasma ...

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Номер записи: 99
14-01-2016 дата публикации

METHODS FOR HIGH PRECISION ETCHING OF SUBSTRATES

Номер: US20160013063A1
Автор: RANJAN ALOK, Ventzek Peter L. G., Wang Mingmei
Принадлежит:

This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV. 1. A method , comprising:receiving a microelectronic substrate into a plasma process chamber;receiving a gas mixture in the plasma process chamber, the gas mixture comprising a dilution gas and a reactant gas;achieving a process pressure of greater than or equal to 40 mTorr in the plasma process chamber;applying microwave power to the gas mixture;applying an alternating bias power to the gas mixture that alternates on and off in an asymmetrical manner over a period of time, the bias power comprising a magnitude of no more than 150 W at a driving frequency; andvarying concentration of the gas mixture over the period of time, the variation ranging between 0% and 100% by volume of the reactant gas.2. The method of claim 1 , wherein the microwave power generates a plasma potential proximate to the substrate of less than or equal to 20 eV when the biasing is off.3. The method of claim 2 , wherein the dilution gas comprises one or more of the following: argon claim 2 , helium claim 2 , or nitrogen claim 2 , and the reactant gas comprises an oxygen-containing gas or a halogen-containing gas.4. The method of claim 1 , wherein the driving frequency comprises less a frequency less than 60 MhZ.5. The method of claim 1 , wherein the reactant gas concentration varies ...

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Номер записи: 100