СТРУЙНЫЙ ПРИНТЕР С УПРАВЛЯЕМЫМИ УРОВНЯМИ КИСЛОРОДА

Изобретение относится к области струйной печати. В частности, изобретение относится к процессу для управления составом атмосферы, в которой происходит закрепление чернил в процессе печати с закреплением излучением. Печатающее устройство содержит источник газа, выполненный с возможностью обеспечения кислорода и обеспечения нереактивного газа для пассивирующего газа, область грунтовочного покрытия, содержащую, по меньшей мере, одну печатающую головку для нанесения грунтовочного покрытия методом струйной печати. Область пассивации, содержащую, по меньшей мере, один аппликатор пассивирующего газа и, по меньшей мере, один источник освещения, причем упомянутый источник пассивирующего газа управляемой чистоты сообщается по текучей среде с упомянутым, по меньшей мере, одним аппликатором пассивирующего газа. Контроллер, выполненный с возможностью управления уровнем кислорода и уровнем нереактивного газа для изменения состава пассивирующего газа, обеспечиваемого указанным источником газа, и принтер ...

СПОСОБ И УСТРОЙСТВО ДЛЯ ТРАВЛЕНИЯ МЕТАЛЛИЧЕСКОЙ ЛЕНТЫ

Изобретение относится к области получения металлических поверхностей с заданными характеристиками. Технический результат - улучшение качества травления и уменьшение расходов. Согласно способу для травления металлической ленты, в частности катаной, ее пропускают через травильную установку, в которой металлическую ленту протравливают травильным раствором. Причем результат травления является зависимым от параметров травления. Результат травления измеряют и по меньшей мере один параметр травления в зависимости от измерения результата травления автоматически изменяют для улучшения результата травления. Устройство для реализации способа содержит измерительный прибор для измерения дефектов на металлической ленте или непротравленных мест подлежащего протравливанию материала на ленте. 2 с. и 7 з.п. ф-лы, 2 ил., 1 табл.

Устройство для осуществления динамического химического протравливания спеченных металлических пеноматериалов и определения их проницаемости жидкостями

FIELD: technological processes. SUBSTANCE: device consists of water and etchant tanks in parallel connected to the switching tap by first and second tubular channels, connected in series by the third tubular channel with a pump, a flow velocity sensor, a sample fixing chamber consisting of successively hermetically sealed and forming a continuation of the third tubular channel of the inlet cover with a hole in which the input pressure sensor of the housing is mounted, in which two holders and a clamping nut for fastening the sample, outlet lid with a hole, in which a output pressure sensor and the output channel are installed are mounted. EFFECT: invention makes it possible to control the increase in pore size, porosity and permeability, to measure the permeability of liquids. 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 631 782 C1 (51) МПК C23F 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2016150739, 23.12.2016 (24) Дата начала отсчета срока действия патента: 23.12.2016 Дата регистрации: Приоритет(ы): (22) Дата подачи заявки: 23.12.2016 (45) Опубликовано: 26.09.2017 Бюл. № 27 (56) Список документов, цитированных в отчете о поиске: RU 2537488 C2, 10.01.2015. RU 2 6 3 1 7 8 2 R U (54) Устройство для осуществления динамического химического протравливания спеченных металлических пеноматериалов и определения их проницаемости жидкостями (57) Реферат: Изобретение относится к устройству, измерения скорости потока, камерой для позволяющему осуществлять контролируемое закрепления образца, состоящей из изменение пористой структуры металлических последовательно герметично закрепленных и пеноматериалов путем динамического формирующих продолжение третьего трубчатого химического протравливания (ДХП) с канала входной крышки с отверстием, в котором одновременным измерением проницаемости. установлен входной датчик давления, корпуса, в Материалы после обработки с использованием котором установлены два ...

УСТРОЙСТВО ТРАВЛЕНИЯ ПОВЕРХНОСТИ ДЛИННОМЕРНОГО МЕТАЛЛИЧЕСКОГО ИЗДЕЛИЯ (ВАРИАНТЫ)

... 1. Устройство для травления длинномерного металлического изделия, отличающееся тем, что оно содержит средство струйного травления и расположенный под ним транспортер, а также средство прижима указанного изделия к грузонесущему органу транспортера. ! 2. Устройство по п.1, отличающееся тем, что транспортер выполнен ленточным, роликовым, шариковым, магнитным, пластинчатым, ленточно-цепным, ленточно-канатным. ! 3. Устройство по п.1, отличающееся тем, что грузонесущий орган транспортера выполнен из полимерного химически стойкого материала. ! 4. Устройство по п.1, отличающееся тем, что средство прижима обрабатываемого изделия к грузонесущему органу транспортера выполнено в виде системы подачи сжатого газа на грузонесущий орган транспортера, расположенное над грузонесущим органом транспортера. ! 5. Устройство по п.1, отличающееся тем, что средство прижима обрабатываемого изделия к грузонесущему органу транспортера выполнено в виде системы откачивания воздуха из-под длинномерного металлического ...

СОСТАВ И СПОСОБ ВИБРОХИМИЧЕСКОЙ ОБРАБОТКИ ПОВЕРХНОСТИ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ

Изобретение относится к области виброхимической обработки поверхности черных металлов, в частности, виброхимического шлифования и полирования, и может быть использовано при подготовке поверхности изделий из черных металлов к последующему нанесению гальванических покрытий. Состав для виброхимического шлифования и полирования изделий содержит, вес. %: щавелевая кислота 8-40, растворимый неорганический фосфат 6-30, моноэтаноламин 2-20, поверхностноактивное вещество 0,1-2,0 и гранулированный абсорбент диатомовая земля 5-30, причем соотношение щавелевой кислоты и растворимого неорганического фосфата составляет (0,3 - 2,0) : 1. В качестве растворимого неорганического фосфата состав содержит фосфаты, триполифосфаты щелочных металлов или пирофосфат тетранатрия. Способ виброхимического шлифования и полирования изделий включает обработку изделий, помещенных в емкость приведенным составом, который смешивают с водой в соотношении 60 - 90 кг состава на 1 м3 воды и подают в емкость на обрабатываемые ...

СПОСОБ ТРАВЛЕНИЯ МАТЕРИАЛОВ

Изобретение относится к области обработки пористых материалов и может использоваться в промышленности для химической и электрохимической обработки материалов при изготовлении металлокерамических пористых тел с заданной структурой, а также при проведении экспериментальных исследований по изучению структуры пористых тел. Способ травления изделий из пористых материалов включает локальную химическую или электрохимическую обработку при взаимодействии с травильным раствором части поверхности изделия, причем к изделию через одну из его поверхностей подводят воздух или азот, а обработку ведут при поддержании в порах материала перепада давлений между газом и травильным раствором, после чего осуществляют промывку водой. Перепад давлений в процессе обработки несколько раз сначала увеличивают, а затем возвращают к исходному значению. 3 ил.

ЛИНИЯ ТРАВЛЕНИЯ ОКИСЛЕННЫХ МЕТАЛЛИЧЕСКИХ МАТЕРИАЛОВ

Изобретение относится к металлургии и машиностроению, может быть использовано при изготовлении металлических материалов: листов, тонких лент, проволоки, профилей, прутков и плит со светлой неокисленной поверхностью. Линия травления включает травильные и промывочные ванны и снабжена установленным перед травильной ванной деформирующим устройством, обеспечивающим пластическую деформацию металлической основы материала под слоем окалины, причем вид деформирующего устройства определяется формой материала. Использование предлагаемой линии травления значительно повышает скорость травления металлических материалов при одновременном улучшении качества поверхности, сокращает время травления до полного удаления окалины, а также повышает производительность технологического процесса подготовки поверхности. 3 з.п.ф-лы.

ЛИНИЯ НЕПРЕРЫВНОГО ТРАВЛЕНИЯ С НАКЛОННЫМ РАСШИРЯЮЩИМСЯ УПЛОТНИТЕЛЕМ

Изобретение относится к линии непрерывного травления, содержащей рольганг, травильную ванну и расширяющееся уплотнение. Рольганг имеет переднюю и заднюю стороны, наклоненные к вертикали таким образом, чтобы верхний край передней стороны и верхний край задней стороны были расположены ближе друг другу, чем нижний край передней стороны и нижний край задней стороны, при этом передняя и задняя стороны рольганга имеют отверстия для приема травимого материала. Травильная ванна имеет переднее и заднее отверстия, которые можно совместить с отверстием в передней стороне и задней стороне рольганга. Расширяющиеся уплотнения окружают периметр травильной ванны по существу вблизи переднего и заднего отверстий и наклонены приблизительно под тем же углом, что и передняя, и задняя поверхности рольганга. Расширяющееся уплотнение охватывает промежуток между травильной ванной и рольгангом, и угол наклона передней и задней стороны рольганга позволяет беспрепятственно опускать и поднимать травильную ванну по ...

СОСТАВ ДЛЯ ВИБРОХИМИЧЕСКОГО ШЛИФОВАНИЯ И ПОЛИРОВАНИЯ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ И СПОСОБ ВИБРОХИМИЧЕСКОГО ШЛИФОВАНИЯ И ПОЛИРОВАНИЯ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ

Использование: виброхимическое шлифование и полирование изделий из черных металлов перед нанесением покрытий. Сущность изобретения: осуществляют обработку изделий полирующим составом, содержащим, мас. % : щавелевая кислота 3 - 20, фосфорная кислота или пирофосфат тетранатрия 10 - 50, гидроокись аммония или фосфат аммония 5 - 28, поверхностно-активное вещество 0,1 - 2,0, суспендирующее вещество - ксантановая смола или водорастворимые полимеры винила марки "Карбопол" 2,0 - 13,0 и вода 30 - 90, причем соотношение щавелевой кислоты и фосфатсодержащего вещества составляет (0,2 - 0,7) : 1. Полирующий состав подают на обрабатываемые изделия в вибрационную полировочную ванну со скоростью 211 г/ч на 1000cм2 поверхности изделий, а pH среды регулируют в пределах от 3,5 до 7,0 добавлением аммонийсодержащего вещества. 1 з. п. ф-лы.

СОСТАВ ПОЛИРУЮЩЕГО ТРАВИТЕЛЯ ДЛЯ ТЕЛЛУРИДА КАДМИЯ-РТУТИ

Изобретение относится к области обработки поверхности теллурида кадмия-ртути химическим полирующим травлением. Состав полирующего травителя для теллурида кадмия-ртути включает компоненты при следующем соотношении, в объемных долях: метанол (95%) - 5, этиленгликоль - 13, бромистоводородная кислота (47%) - 2, перекись водорода (30%) - 1. Предложенный состав обеспечивает полирующее травление со скоростью не более 0,75 мкм/мин и позволяет получить поверхность теллурида кадмия-ртути с минимальной шероховатостью, в среднем не более 2 нм. 4 ил., 1 табл.

ИНГИБИТОРЫ КИСЛОТНОЙ КОРРОЗИИ

Ингибиторы кислотной коррозии нелегированных сталей, представляющие собой продукты конденсации эквимольных количеств замещенных 3-арил-5-нитрометил-1,2,4-оксадиазолов с 1,1-дифенилгидразином в среде этоксиэтана, отличающиеся тем, что в их структуре содержатся кольца оксадиазолов, которые легко подвергаются деструкции, что обеспечивает их коррозионную активность.

СПОСОБ ИЗГОТОВЛЕНИЯ ПРЕЦИЗИОННЫХ ИЗДЕЛИЙ ИЗ МОЛИБДЕНА И ЕГО СПЛАВОВ И РАСТВОР ДЛЯ ФОТОХИМИЧЕСКОГО ТРАВЛЕНИЯ

... 1. Способ изготовления прецизионных изделий из молибдена и его сплавов с заданными геометрическими параметрами, включающий предварительную обработку поверхности исходного материала в обезжиривающем органическом растворителе, формирование на ней фоторезистивной маски с использованием позитивного фоторезиста, последующее травление исходного материала через фоторезистивную маску в растворе для фотохимического травления при постоянном контроле, отличающийся тем, что после предварительной обработки поверхности исходного материала в обезжиривающем органическом растворителе ее дополнительно обрабатывают последовательно в обезжиривающем щелочном растворе и водном растворе кислот при температуре 50-60°С и 18-25°С в течение 30-40 мин и 0,5-1 мин соответственно с последующей сушкой в безкислородной атмосфере, при формировании фоторезистивной маски используют позитивный фоторезист с кинематической вязкостью, равной 6-6,5 мм2/с, при этом его задубливание ведут при температуре 190-210°С в течение 40- ...

СПОСОБ ЭЛЕКТРОГИДРАВЛИЧЕСКОЙ ОЧИСТКИ НЕЖЕСТКИХ ПЛАСТИНЧАТЫХ ДЕТАЛЕЙ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

... 1. Способ электрогидравлической очистки нежестких пластинчатых деталей, включающий укладку детали в контейнер, размещение положительного и отрицательного электродов у поверхности детали, погружение контейнера в рабочую жидкость и очистку воздействием высоковольтных электрических разрядов в жидкости с одновременным перемещением положительного электрода относительно поверхности детали, отличающийся тем, что в качестве отрицательного электрода используют сетку с размером ячейки h х h и располагают ее на расстоянии l от поверхности детали, при этом размеры h и l выбирают из соотношений: h = (5-10)б, l = (2-8)б, где б - толщина обрабатываемой детали, а воздействие высоковольтными электрическими разрядами осуществляют с частотой до 50 Гц. 2. Устройство для электрогидравлической очистки нежестких пластинчатых деталей, содержащее бак с рабочей жидкостью, контейнер, положительный и отрицательный электроды, соединенные с генератором импульсного тока, узел перемещения положительного электрода, отличающееся ...

РАСТВОР ДЛЯ ТРАВЛЕНИЯ ХРОМОНИКЕЛЕВЫХ ЖАРОСТОЙКИХ СПЛАВОВ

Раствор для травления хромоникелевых жаростойких сплавов, преимущественно для удаления никель(кобальт)-хром-алюминий-иттриевых покрытий, включающий соляную кислоту, хлорное железо и воду, отличающийся тем, что, с целью предотвращения растравливания основы, содержащей 4 - 7% хрома, при удалении покрытия, содержащего до 20% хрома, компоненты раствора берут в следующем соотношении, мас.%: Соляная кислота - 33,0 - 34,7 Хлорное железо - 0,9 - 2,5 Вода - Остальное ...

АНИЗОТРОПНЫЙ ТРАВИТЕЛЬ ДЛЯ КРЕМНИЯ

Травитель для кремния, состоящий из водного раствора гидрооксида калия и присадки для удаления водорода, отличающийся тем, что в качестве присадки для удаления водорода в состав травителя входит углекислый калий в количестве 1÷5 % от массы гидрооксида калия.

Раствор для химического травления металлов

Способ упрочнения режущего инструмента

Изобретение относится к металлургии и может быть использовано при обработке режущего инструмента.Цель изобретения - повышение износостойкости . Сверла из сплава ВК6К после заточки были подвергнуты травлению в реактиве состава, мас.%: хромпик 4-6, серная кислота 50; вода 44-46, в течение 10-30 мин. Заключительным этапом обработки является обработка в жидком азоте. Применение способа позволяет значительно повысить износостойкость режущего инструмента. 1 табл. О ф ...

Способ размерного травления

Раствор для удаления покрытий на основе золота и серебра

Изобретение относится к гапьва- ностегин, в частности к удалению некачественных покрытий на основе золота и серебра, и может найти применение в. радиотехнической и электронной промышленности. Цель - повышение скорости удаления покрытий при исключении растравливания основы. Раствор содержит, г/л: йодистый калий 300 - 600; иод I50-250;.антрахинон 0,3-0,5.

Установка для травления алюминиевой посуды

Способ химической обработки деталей из черных металлов

Сущность изобретения: способ химической обработки деталей из черных металлов включает травление вспененным раствором , содержащим минеральную кислоту, ингибитор коррозии и поверхностно-активное вещество, а также нейтрализацию, промывку и пассивацию, которые производят вспененным раствором, полученным путем возврата отработанного травильного раствора , предварительно обработанного газообразным аммиаком и водным раствором гидроксидов щелочноземельных металлов. 1 ил., 2 табл.

Раствор для травления аустенитных сталей, легированным титаном

Раствор для травления выводов интегральных микросхем

РАСТВОР ДЛЯ ТРАВЛЕНИЯ ВЫВОДОВ ИНТЕГРАЛЬНЫХ МИКРОСХЕМ преимущественно.в пластмассовых корпусах , содержащий хлорное железо и соляную кислоту, о т л и ч а ющ и и с я тем, что, с целью сохранения пластмассового корпуса и улучшения качества поверхности выводов , он дополнительно содержит этилендиамин при следующем соотношении компонентов, г/л: 480-520 Хлорное железо Соляная кислота (d 1,18 г/см) 106-118 25-30 Этилендиамин ...

Способ травления латуни и цветных металлов

Способ обработки инструмента

Травильный раствор

Раствор для химического травления сплавов на основе алюминия

Способ травления и промывки поверхности медной фольги

Способ обработки металла

Способ струйного травления

Паста для очистки металлических поверхностей

Регулятор скорости движения полосы

Эмульсионно-травильная машина

СПОСОБ ТРАВЛЕНИЯ МЕТАЛЛОВ

Устройство автоматического регулирования толщины стравливаемого металла

Раствор для травления форм высокой печати на микроцинке

Изобретеиие относится к раствору для травления форм высокой печати , может быть испо;пз3овано- в полиграфической промьшшенности,и позволяет повысить качество травления печатных форм. Водный раствор для однопроцессного травления форм высокой печати ца микроцинке содержит азотную, щавелевую кислоты, бензи- мидазол при следующем соотношении компонентов, г/л: азотная кислбта 60-80, щавелевая cиcлoтa 10-20, бенз- имидазол 5-7, вода до 1 л.

Способ непрерывного травления меди в рецикле с электрохимической регенерацией травильного раствора

Изобретение относится к химической обработке поверхности металлов, в частности к способам травления медных печатных плат в рецикле с электрохимической регенерацией травильного раствора. Целью изобретения является повышение скорости травления и выхода металла по току металлической меди и снижение энергозатрат. Процесс травления ведут в струе раствора, подаваемого со стадии регенерации, причем для травления берут раствор на основе хлорида меди (II) следующего состава, моль/л: хлорид меди (II), двухводный 0,1-0,8 нитрат меди (II) трехводный 0,6-2,0 ацетонитрил до 1 л, когда количество стравленной меди в растворе составляет 5,5-6,5 г/л, процесс регенерации проводят при скорости протока раствора (6-8).10-3м/с и плотности тока (8-9) А/дм2. Данный способ позволяет повысить скорость травления до 65 мкм/мин, выход по току металлической меди до 85%, снизить энергозатраты за счет проведения электролиза при низких плотностях тока. 1 ил., 1 табл.

Раствор для однопроцессногоТРАВлЕНия КОМбиНиРОВАННыХ пЕчАТНыХфОРМ HA МиКРОциНКЕ

Антииспаритель травельных растворов

Раствор для травления алюминия

РАСТВОР ДЛЯ ТРАВЛЕНИЯ . А ЛЮМ ИНИЯ Л содержащий ортофосфораую киспоту, азотную кисгюту, уксусную кйопоту , сахарозу, смачивающее вещество СВ-.1017 и вояу, о тпичающнйс я Ггем, что, с аепью повышения скороо ти травпенвя при сохранении свойств аащитюй маски, он аопопнитепьво содержит меоь сертокиспую при спедующем соотношеншЕ ингредиентов, мас.%: ортофосфорная 78,140-86,322 киспота 7О%-ная азотная киопота 2,787-3,956 1ОО%-кая уксусная кнспота 3,387-3,966 Сахароза 1.О36-1,9бв Смачивающее Е шество СВ-1017 0,002-0,030 Медь сернсжиспая 0,540-5,937 Вода Остальное ...

Способ химического фрезерования деталей

СПОСОБ ХИМИЧЕСКОГО ФРЕЗЕРОВАНИЯ ДЕТАЛЕЙ, преимущественно длинномерных полых обечаек, включающий принудительное прокачивание раствора через внутреннюю полость изделия, отличающийся тем, что, с целью обеспечения одинаковой глубины обрабатываемых участков, используют копир, который устанавливают так, что между копиром и обрабатываемой поверхностью образуется щель. высоту которой в направлении прокачки раствора определяют по формуле &C.Q Н8-RL .pK(i Н Q R L где -высота щели; -производительность насоса; -радиус обечайки; -длина обечайки; Р -плотность раствора; К -константа скорости химической реакции; |Ь -- коэффициент пропорциональности f йС Со-Св, ; (Л в свою очередь С - концентрация где раствора на входе в В- концентрация раствора на выходе из щели .

Травильно-регенерационный комплекс

Изобретение относится к гальванической обработке металлов, в частности к регенерации отработанных травильных растворов медных печатных плат. Целью изобретения является повышение качества обработки изделий за счет обеспечения стабильности процессов травления и регенерации. Травильно-регенеративный комплекс включает установку травления 1 с охлаждающим элементом 2 и камерой промывки 3, установку электрохимической регенерации 4, блок кондиционирования 5 с камерой сепарации 6 и камерой корректировки плотности 7 с размещенной между ними диафрагмой 8. При подаче в камеру 1 раствора хлорного железа в нее помещают заготовки, которые после стравливания поступают в камеру промывки. Вода в камеру поступает через охлаждающие элементы 2 и 11. Отработанный травитель поступает в камеру сепарации 6, где происходит отделение нерастворимых гидроксидов металлов, и далее, через диафрагму 8 поступает в камеру корректировки 7. Насосом 12 раствор травителя возвращается в камеру травления. Отклонение скорости травления ...

Электролит для выявления микроструктуры композиционного материала сталь - алюминий

Изобретение относится к электролитам для выявления микроструктуры слоистого композиционного материала сталь-алюминий. Цель изобретения - одновременное четкое выявление микроструктуры основных слоев и переходной зоны, что достигается дополнительным содержанием соляной кислоты и синтанола. Электролит содержит, г/л: хромовый ангидрид 5 - 6 азотная кислота (J=1,42 г/см3) 120 - 150 соляная кислота (J=1,19 г/см3) 400 - 480 аммоний кремнефтористый 100 - 120 синтанол 1 - 2 вода до 1 л. В электролите отчетливо выявлена микроструктура всех составляющих слоев и переходных зон композиционного материала АМ26-АД1- 12Х18Н10Т путем электролитического травления в течение 20 - 50°С при плотности тока 0,5 - 1,5 а/см2и температуре 20°С. 1 табл.

Способ травления стальных изделий

СПОСОБ ТРАВЛЕНИЯ СТАЛЬНЫХ ИЗДЕЛИЙ, включающий обработку в растворе при наложении юэпебаннй, о т ли ч а ю щ и и с я тем, что, с цепью интенсификации процесса, снижеавя потерь металла и уменьшения наводораживтавя, колебания накладывают путем возаейстмя высоковопьтных электроимпупьсных разря дов с частотой 0,2-10 Гц и эне йгвей в импульсе 0,О1-1,ОО кЛж. О DO О э ...

Способ химического фрезерования металлических деталей

Изобретение относится к методам химической размерной обработки металлов и может быть использовано в машиностроении для получения деталей различного профиля. Целью изобретения является расширение технологических возможностей и получение деталей сложного профиля. После установки и фиксации заготовки в насадке и размещения вдоль обрабатываемой поверхности заготовки нерастворяющегося экрана в образовавшейся между экраном и заготовкой зазор подают с постоянным расходом химический реагент. Изменение скорости реагента и как следствие неодинаковый запланированный металлосъем при диффузионном растворении обрабатываемой поверхности заготовки обеспечивают за счет переменного по длине сечения зазора между деталью и экраном. Ординату экрана по продольной координате X рассчитывают по формуле: H (X)=H(X)+{[H(X)-H0]M+1+ΑΤ}1/(M+1), где Α=A0.CR.N.(Q/B)M.(M+1)/ρ Τ - время обработки детали H0- начальная толщина заготовки H(X),H(X) - толщина детали и ордината экрана в произвольном сечении A0,M - постоянные ...

Состав для химического травления алюминия

Раствор для травления пленок окисла железа

Способ подготовки поверхности металлов перед нанесением гальванических покрытий

Способ травления хрома

Химический способ снятия меди со стальных деталей

Способ травления стальных изделий

Раствор для травления сталей

Состав для химико-механической обработки металлических изделий

Травитель для пленок окиси железа

Способ снятия покрытий

Способ получения производных N-фенилпиразола

Изобретение относится к гетероциклическим соединениям, в частности к получению производных N-фенилпира- зола формулы (CN)(M), при М - CRj CR4-C CR,(CF3), где R, и R хлор, R и Rj - водород; или R( - хлор, Rj.- R4-водород; или R, - R - фтор или R , R- и R - хлор, R - водород, которые проявляют гербицидную активность и могут найти применение в сельском хоз.чйстве. Цель - получение более активных веществ указанного,класса. Получение их ведут из соединения формулы , где М указано выше, или его кислотно-аддитивной соли и соединения формулы (NC)(OR5)H, где Rf - С,-С4-алкил с прямой или разветвленной цепью, в присутствии ацетата щелочного металла в среде инертного органического растворителя (ИОР) при комнатной температуре. Полученное производное фенилгидразина под- . вергают циклизации в среде ИОР при температуре от комнатной до температуры кипения реакционной смеси с - обратным холодильником. 6 табл. § W ...

Устройство для катодного распыления материалов

VERFAHREN ZUM PHOTOLITHOGRAPHISCHEN METALLISIEREN ZUMINDEST DER INNENSEITEN VON LÖCHERN DIE IN ZUSAMMENHANG MIT EINEM AUF EINER AUS ELEKTRISCH ISOLIERENDEM MATERIAL BESTEHENDE PLATTE BEFINDLICHEN MUSTER AUFGEBRACHT SIND

Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeichervorrichtung

VERFAHREN ZUM AETZEN VON OEFFNUNGEN IN EINEM DUENNEN METALLBAND

VERFAHREN ZUR HERSTELLUNG DUENNER GROSSFLAECHIGER KRISTALLSCHEIBEN

Durch Strahlung polymerisierbares Aufzeichnungsmaterial und Verfahren zur Herstellung von Reliefaufzeichnungen.

Elektrode für elektrolytische Verfahren und Verfahren zur Herstellung der Elektrode.

Verfahren zur Herstellung einer gedruckten Schaltung mit Loch

Vorrichtung zum Abaetzen von Halbleiterkoerpern fuer Transistoren oder kugelfoermiger Gestalt

Verfahren zur Herstellung von Elektrodenfolien fuer Elektrolytkondensatoren

MITTEL ZUM AETZEN VON CHROM ODER MOLYBDAEN

VERFAHREN ZUR EINAETZUNG VON DURCHBRECHUNGEN IN EIN METALLBAND, INSBESONDERE ZUR ANFERTIGUNG VON LOCHMASKEN FUER BILDROEHREN VON FARBFERNSEHGERAETEN

Alkalisches Verfahren zum Ersetzen von Wärmedämmschichten

Verfahren zur Herstellung gedruckter Schaltungen

METHOD OF LEACHING A LAYER FROM AN ARTICLE

VERFAHREN ZUR HERSTELLUNG EINER MATTEN PRÄGEFLÄCHE EINES DER OBERFLÄCHENFORMUNG VON PRESSLAMINATEN DIENENDEN PRÄGEWERKZEUGS.

Verfahren zur Oberflächenbehandlung von Werkzeugen und Werkzeuge mit behandelter Oberfläche

Es wird ein Verfahren zur Oberflächenbehandlung von Werkzeugen aus Werkzeugstahl, in deren Stahlmatrix Primärkarbide eingelagert sind, beschrieben. Dabei werden an der Oberfläche befindliche Primärkarbide unter Bildung einer punktförmig vertieften Oberfläche abgelöst oder ganz herausgelöst, und auf dieser eine Hartstoffschicht abgeschieden. Die Erfindung beschreibt weiterhin Werkzeuge aus Werkzeugstahl, in dessen Stahlmatrix Primärkarbide eingelagert sind, worin die Primärkarbide wesentlich abgesenkt sind und eine Hartstoffschicht darauf aufgetragen ist.

VERFAHREN ZUM HERSTELLEN VON HALBLEITERBAUELEMENTEN

VERFAHREN UND EINRICHTUNG ZUM BEHANDELN VON LEITERPLATTEN

VERFAHREN ZUR HERSTELLUNG GEAETZTER MUSTER

Verfahren zum Ätzen von Siliziumoberflächen

Demetallization of plastics parts, useful for recycling metals and plastics from e.g. chromium-plated parts in vehicles or consumer products, involves chemical etching to remove chromium, copper, nickel and optionally palladium

Demetallization process comprises chemical etching of chromium (Cr), copper (Cu), nickel (Ni) and optionally palladium (Pd) from the surface of plastics parts metallized with these metals. Demetallization process comprises chemical etching of chromium (Cr), copper (Cu), nickel (Ni) and optionally palladium (Pd) from the surface of plastics parts metallized with these metals. The parts are demetallized in chemical baths. The outer Cr layer is dissolved with hydrochloric acid (HCl; preferably 10-25%), with evolution of hydrogen and no significant heat-up. The other metals are dissolved with a mixture of HCl (preferably 5-25%) and hydrogen peroxide (H2O2) solution (preferably 0.5-5%) or chemicals containing peroxide, with significant heat-up. During etching, H2O2 is added continuously or in small portions, preferably with stirring, at the bottom of the bath. The pH and density of the etching solution are kept constant during reaction by adding sulfuric acid (preferably 5-10%). The density ...

Method for making a planar cantilever MEMS switch

Method for making a planar cantilever mems switch

Method for making a planar cantilever mems switch

CHEMICAL MILLING PROCESS

... 1,202,416. Etching. EASTMAN KODAK CO. 8 Dec., 1967 [8 Dec., 1966], No. 55884/67. Heading B6J. An article, e.g. metal, plastic or glass, having patterns of mist on the top and bottom surfaces, is moved longitudinally between upper and lower etchant sprays and etched to near breakthrough, removed from the etchant, placed on a mesh screen and etched again until breakthrough occurs. The screen supporting the etched-through articles is then placed in a tray and again passed below upper sprays, the lower sprays being omitted, so that the tray becomes filled with etchant to submerge the articles just below the surface, and then the bath is agitated by the sprays in the vicinity of the articles, this final etchant improving the previously chevronshaped lateral profile by rounding off the point.

TRACK REGISTRATION PROCESS

... 1,240,767. Recording tracks of particles. GENERAL ELECTRIC CO. 12 June, 1969 [28 June, 1968], No. 29919/69. Heading G6P. In a particle track registration process, the damage tracks in the irradiated material are exposed to ultraviolet light, in the presence of oxygen, prior to immersion in an etchant. A rapid selective etching along the damage tracks is effected and a more uniform cylindrical track is produced. The track forming particles may be derived from self-fissioning isotopes such as Californium-252, isotopes which limit alpha particles (radium-226), materials which fission and emit fission fragments when irradiated with neutrons (uranium 235); and materials, such as boron-10, which emit alpha particles when irradiated with neutrons.

METHOD OF PRODUCING ELECTRICAL INTERCONNECTION PATTERNS

... 1364660 Etching of an aluminium layer STANDARD TELEPHONES & CABLES Ltd 2 Dec 1971 55963/71 Heading C7B [Also in Division B6] In a method of producing a printed circuit from an Al layer on a substrate, e.g. from an Al coated slice of Si, the layer is electrically connected with a conductor of a material less electro-positive than Al and is etched, when suitably masked, with at least a part of the conductor immersed in the etching solution. The coated Si slices may have integrated circuits thereon or be plain oxidized Si slices. They may be held in phosphoric acid etch by stainless steel tweezers connected via an ammeter to a Pt electrode in the etch. Alternatively they may be clamped in Pt or Au wire or held in Au plated tweezers submerged in the.etch.

A process for the production of a thin-layer body of an a b semi-conductor material

... 1,079,043. Etching. SIEMENS-SCHUCKERTWERKE A.G. Aug. 4, 1964 [July 20, 1963], No. 30617/64. Heading B6J. [Also in Division H1] A thin-layer body of AIIIBV semi-conductors is formed from a starting wafer attached to a substrate and brought to the desired thickness by a chemical etching and polishing process. The active etchant is a free halogen or a halogencontaining substance. A polishing addition is included in the etching liquid. Specific etching liquids are: (a) aqueous cupric chloride, glycerine (polisher) and bromine; (b) glacial acetic acid {polisher) and bromine; (c) glacial acetic acid and chlorine; (d) chromium trioxide with one of saturated aqueous cupric chloride, saturated aqueous ferric chloride, concentrated hydrochloric acid, and with a polisher selected from concentrated sulphuric acid, concentrated phosphoric acid, or glacial acetic acid; and (e) aqueous ferric chloride and glycerine. Other polishing additives are glycol, glucose, starch and dextrin, gelatine ...

PHOTOMASK

... 1354809 Cathode sputtering rare earth orthoferrites INTERNATIONAL BUSINESS MACHINESS CORP 6 Nov 1972 [27 Dec 1971] 51116/72 Heading C7F [Also in Division B6 and G2] Rare earth orthoferrites such as Gd Fe O 3 are cathode sputtered on to a substrate (e.g. glass, sapphire or quartz) e.g. from a hot-pressed mixture of Fe 2 O 3 and Gd 2 O 3 in an atmosphere of argon and/or oxygen using a substrate temperature of 25-200‹C and a powder density of 3 À15-8À75 watts cm.-2. The coating is used as a photo-mask.

A method for pseudo-planarization of an electromechanical device

Etching Process.

... 1,176,673. Etching. BROWN, BOVERI & CO. Ltd. 7 Sept., 1967 [9 Sept., 1966], No. 40880/67. Heading B6J. [Also in Division H1] A semi-conductor member 100 is etched in apparatus comprising a cylindrical tank 4 containing etchant 5 and rotatable by a motor 6 about its axis 8, which is inclined to the vertical, the member 100 rolling on the inner cylindrical surface of the tank and bubbles forming during etching being removed therefrom by projecting rods 7, fitted to the tank.

Stainless steel plate having designs and fabricating method thereof

METHOD FOR MAKING AN AIR COOLED COMBUSTOR

NICKEL COATED COPPER FOIL FOR A RINTED CIRCUIT

Stripping solution for nickel superalloys

Nickel aluminide and like coatings are stripped from nickel base superalloy substrates using a 60 DEG -71 DEG C. solution consisting essentially by volume percent of 43-48 nitric acid, 7-12 hydrochloric acid, balance water, and containing 0.008-0.025 mole/liter ferric chloride and at least 0.016 mole/liter copper sulfate. Coating removal is rapid while significant attack of the substrate is avoided.

FORMING APERTURES IN A METAL SHEET

... 1474998 Etching PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 12 July 1974 [16 July 1973] 30973/74 Heading B6J Metal foil 1 is provided with masks 3, 5 on both sides, then the apertures 7 in mask 3 are closed by application of synthetic material member 11 while etchant is sprayed against the foil through apertures 9 to form cavities 13. Then the member 11 is removed and etchant is sprayed against the foil through the apertures 7 to form smaller cavities communicating with the cavities 13. The apertured foil so produced is used as a shadow mask in a colour television display tube. Preferably the foil 1 is an extended tape and the member 11 is a tape or endless band, adhering to the foil at their edges.

Multi-Frequency Hollow Cathode System for Substrate Plasma Processing

A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude.

METHOD FOR MANUFACTURING GRAIN-ORIENTED ELECTRICAL STEEL SHEET

A resist film is formed on a cold-rolled steel sheet so as to fabricate a groove by etching. At this point, a steel sheet exposed portion where a portion of the steel sheet is exposed is formed in the resist film, and the steel sheet exposed portion has a first region oriented in a sheet width direction, and a plurality of second regions starting from the first region, widths of the first region and the second regions being 20 μm to 100 μm, and a distance from an end portion of one of the second regions to an end portion of another of the second regions adjacent thereto being 60 μm to 570 μm. 1. A method for manufacturing a grain-oriented electrical steel sheet comprising the steps of:forming a film on one surface or both surfaces of a steel sheet; andperforming etching on the steel sheet where the film is formed by controlling such that a groove depth of the steel sheet is 10 μm to 30 μm, and an erosion width to a lower portion of the film is 2 to 4.5 times of the groove depth,wherein a steel sheet exposed portion where a portion of the steel sheet is exposed is formed in the film, andthe steel sheet exposed portion has a first region oriented in a sheet width direction, and a plurality of second regions starting from the first region, widths of the first region and the second regions being 20 μm to 100 μm, and a distance from an end portion of one of the second regions to an end portion of another of the second regions adjacent thereto being 60 μm to 570 μm.2. (canceled)3. The method for manufacturing a grain-oriented electrical steel sheet according to claim 1 , wherein the etching is electrolytic etching claim 1 , the electrolytic etching being performed by using a sodium chloride aqueous solution having a concentration of 10 mass % to 20 mass % as an etching solution under such conditions that a solution temperature is 40° C. to 50° C. claim 1 , a current density is 0.1 A/cmto 10 A/cm claim 1 , and an electrolytic time length is 10 s to 500 s.4. The method for ...

SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING

Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma. 1. A method of etching a dielectric layer on a substrate , comprising:generating a plasma by pulsing an first RF source signal having a first duty cycle;applying a second RF bias signal having a second duty cycle to the plasma;applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized;adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; andetching the dielectric layer with the plasma.2. The method of claim 1 , wherein adjusting the phase variance further comprises:providing at least one of second or third RF bias signals having a phase lag relative to the first RF source signal to reduce plasma ion density non-uniformity relative to in-phase RF signals.3. The method of claim 1 , wherein adjusting the phase variance further comprises:providing at least one of second or third RF bias signals having a phase lag relative to the first RF source signal to reduce plasma ion energy relative to in-phase RF signals.4. The method of claim 1 , wherein adjusting the phase variance further comprises:providing at least one of second ...

PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS AND METHODS THEREOF

A method for manufacturing a plasma processing system is provided. The method includes providing a movable plasma-facing structure configured to surround a plasma that is generated during processing of a substrate. The method also includes disposing a movable electrically conductive structure outside of the movable plasma-facing structure, wherein both structures configured to be deployed and retracted as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. During processing, the RF current from the plasmas flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing. The method further includes coupling a set of conductive straps to the movable electrically conductive structure. The set of conductive straps accommodates the movable electrically conductive structure when it is deployed and retracted while providing the RF current a low impedance path to ground. 116.-. (canceled)17. A method for manufacturing a plasma processing system with a plasma processing chamber , comprising:providing a movable plasma-facing structure configured to surround a plasma, wherein said plasma is generated during plasma processing of a substrate within said plasma processing chamber;disposing a movable electrically conductive structure outside of said movable plasma-facing structure, wherein said movable electrically conductive structure is configured to be deployed and retracted with said movable plasma-facing structure as a single unit to facilitate handling of said substrate, said movable electrically conductive structure being radio frequency (RF) grounded during said plasma processing, wherein said movable plasma-facing structure is disposed between said plasma and said movable electrically conductive structure during said plasma processing such that RF current from said plasma flows to said movable ...

PROCESSING METHOD UTILIZING CLUSTER

A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture. 1. A method for processing a surface of a sample using reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber , the gas mixture containing a reactive gas chlorine trifluoride , a first inert gas argon , and a second inert gas xenon , whereinthe gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more, the reactive gas constitutes 3% by volume or more and 10% by volume or less, the first inert gas constitutes 40% by volume or more and 94% by volume or less, and the second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.2. The method according to claim 1 , wherein the gas mixture in an inlet of the nozzle has a pressure of 0.6 MPa (abs) or more claim 1 , the reactive gas constitutes 5% by volume or more and 7% by volume or less claim 1 , the first inert gas constitutes 43% by volume or more and 89% by volume or less claim 1 , and the second inert gas constitutes 6% by volume or more and 50% by volume or less of the gas mixture. 1. Field of the InventionThe present invention relates to a processing method for etching or cleaning a surface of a sample using reactive clusters produced from a reactive gas.2. Description of the Related ...

PRINTING STENCIL AND METHOD FOR MANUFACTURING THE SAME

One object is to provide a printing stencil having a uniformed thickness for excellent printing accuracy and a rough surface for better separation from the printing medium. In accordance with one aspect, a method of manufacturing a printing stencil according to an embodiment of the present invention includes: preparing a substrate having a printing pattern opening formed therein and having a printing surface including an organic material; and performing dry etching on the printing surface. 1. A method for manufacturing a printing stencil , the method comprising:preparing a substrate having a printing pattern opening formed therein and having a printing surface including an organic material; andperforming dry etching on the printing surface.2. The method of wherein the substrate includes a frame claim 1 , a mesh mounted on the frame claim 1 , and a carbon-containing emulsion provided on the mesh.3. The method of wherein the emulsion comprises a photosensitive emulsion claim 2 , and wherein the method further comprises exposing the emulsion to light after the dry etching.4. The method of wherein the emulsion comprises a photosensitive emulsion claim 2 , and wherein the method further comprises exposing the emulsion to light before the dry etching.5. The method of further comprising forming a coating film on the printing surface after the dry etching.6. The method of wherein the dry etching is performed using a material gas including at least one element selected from the group consisting of O claim 1 , N claim 1 , H claim 1 , F claim 1 , and Ar.7. The method of wherein an average roughness (Rz) of the printing surface is smaller than an average particle size of metal powder included in a printing paste.8. The method of wherein the substrate includes an additive claim 1 , and the dry etching is performed so as to form one or more projections including the additive in the printing surface.9. The method of wherein the additive comprises at least one substance selected ...

MANUFACTURING METHOD FOR FORMING SUBSTRATE STRUCTURE COMPRISING VIAS

A manufacturing method of a substrate structure including vias includes the following steps. A substrate is provided, wherein a material of the substrate includes polyimide. An etching stop layer is formed on the substrate, wherein the etching stop layer covers two opposite surfaces of the substrate. A patterned process is performed on the etching stop layer to form a plurality of openings exposing a part of the substrate. An etching process is performed on the substrate to remove the part of the substrate exposed by the openings and form a plurality of vias. 1. A manufacturing method for forming a substrate structure comprising vias , the manufacturing method comprising:providing a substrate, wherein a material of the substrate comprises polyimide;forming an etching stop layer on the substrate, wherein the etching stop layer covers two opposite surfaces of the substrate;performing a patterned process on the etching stop layer to form a plurality of openings exposing a part of the substrate; andperforming an etching process on the substrate to remove the part of the substrate exposed by the openings and form the vias.2. The manufacturing method according to claim 1 , wherein the etching process comprises etching the substrate by using an alkaline etching liquid.3. The manufacturing method according to claim 1 , wherein the etching stop layer comprises a photoresist layer claim 1 , and the patterned process comprises a photolithography process.4. The manufacturing method according to claim 3 , further comprising:after the vias are formed, removing the photoresist layer being patterned.5. The manufacturing method according to claim 1 , wherein the etching stop layer comprises a metal layer claim 1 , and the patterned process comprises a metal etching process.6. The manufacturing method according to claim 5 , wherein the metal etching process comprises etching the metal layer by using an acid etching liquid.7. The manufacturing method according to claim 1 , further ...

TOUCH DETECTION DEVICE AND DISPLAY DEVICE WITH TOUCH DETECTION FUNCTION

A touch detection device and a display device with a touch detection function include: a substrate; a touch detection electrode that is arranged on a plane parallel with the substrate, and that includes a plurality of wires arranged at intervals from one another; and a conductive layer that has a sheet resistance value larger than that of the wires, and that is in contact with and overlaps the wires. 1. A touch detection device comprising:a substrate;a touch detection electrode that is arranged on a plane parallel with the substrate, and that includes a plurality of wires arranged at intervals from one another; anda conductive layer that has a sheet resistance value larger than that of the wires, and that is in contact with and overlaps the wires.2. The touch detection device according to claim 1 , wherein the conductive layer is arranged above the substrate claim 1 , and the wires are arranged on the conductive layer.3. The touch detection device according to claim 1 , wherein the wires are arranged above the substrate claim 1 , and the conductive layer is arranged on the wires.41010. The touch detection device according to claim 1 , wherein the sheet resistance value of the conductive layer is Ω/ to Ω/.5. The touch detection device according to claim 2 , wherein the conductive layer includes a first portion overlapping the wires and a second portion not overlapping the wires in a display region for displaying an image.6. The touch detection device according to claim 5 , wherein the first portion of the conductive layer has a thickness larger than that of the second portion in a direction perpendicular to a surface of the substrate.7. The touch detection device according to claim 1 , wherein the conductive layer is arranged across an entire surface of a display region for displaying an image.8. The touch detection device according to claim 1 , wherein an area ratio of the wires with respect to an area of the conductive layer in a plan view is 10% or less in a ...

WALLET-SIZED COMB

A wallet-sized comb is produced by a process of processing a metal substrate having a thickness similar to a credit card. The process includes receiving a comb design including a top portion and a teeth portion, the teeth portion including a plurality of spaced-apart teeth for combing hair and cutting the metal substrate based on the comb design, the cutting performed using a chemical etching technique, where the metal substrate has a thickness at or below 1.2 millimeter. The process further includes extracting a metal comb from the metal substrate generated from the chemical etching technique and de-burring the metal comb, as well as applying a powder coat finish to the metal comb to generate the wallet comb. The comb design may include a design and/or letters in the top portion, such top portion elements cut also using the chemical etching process. 1. A method for generating a comb to be stored in a wallet , the method comprising:receiving a comb design including a top portion and a teeth portion, the teeth portion including a plurality of spaced-apart teeth for combing hair;cutting a metal substrate based on the comb design, the cutting performed using a chemical etching technique and the metal substrate having a thickness at or below 1.2 millimeters;extracting a metal comb from the metal substrate generated from the chemical etching technique and de-burring the comb; andapplying a powder coat finish to the metal comb to generate the wallet comb.2. The method of claim 1 , wherein the metal substrate has a thickness between 0.65 millimeters and 1.2 millimeters.3. The method of claim 1 , wherein the comb design includes a plurality of letters in the top portion claim 1 , the method further comprising:forming the letters in the top portion using the chemical etching technique.4. The method of claim 1 , wherein the metal substrate is made of at least one of: brass claim 1 , stainless steel claim 1 , aluminum claim 1 , cooper claim 1 , nickel claim 1 , silver claim 1 ...

FINE CONCAVO-CONVEX STRUCTURE PRODUCT, HEAT-REACTIVE RESIST MATERIAL FOR DRY ETCHING, MOLD MANUFACTURING METHOD AND MOLD

A fine concavo-convex structure product () is provided with an etching layer (), and a resist layer () comprised of a heat-reactive resist material for dry etching provided on the etching layer (), a concavo-convex structure associated with opening portions () formed in the resist layer () is formed in the etching layer (), a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 μm, a pattern depth H of the fine pattern ranges from 1 nm to 10 μm, and a pattern cross-sectional shape of the fine pattern is a trapezoid, a triangle or a mixed shape thereof. The heat-reactive resist material for dry etching has, as a principal constituent element, at least one species selected from the group consisting of Cu, Nb, Sn, Mn, oxides thereof, nitrides thereof and NiBi. 1. A fine concavo-convex structure product comprising:an etching layer; anda resist layer comprised of a heat-reactive resist material for dry etching provided on the etching layer, wherein a concavo-convex structure associated with opening portions formed in the resist layer is formed in the etching layer, a pattern pitch P of a fine pattern of the concavo-convex structure ranges from 1 nm to 10 μm, a pattern depth H of the fine pattern ranges from 1 nm to 10 μm, and a pattern cross-sectional shape of the fine pattern is a trapezoid, triangle or a mixed shape of thereof.2. The fine concavo-convex structure product according to claim 1 , wherein in any one of a plurality of concave portions forming the concavo-convex structure claim 1 , when boundaries between an opening portion of a concave portion and a surface on an upper side of the etching layer are two lines and the two lines do not cross each other claim 1 , one point on one of the two lines and one point on the other one having the shortest distance therebetween are made two highest points claim 1 , and the pattern cross-sectional shape is a shape drawn by connecting claim 1 , with straight lines claim 1 , the two ...

PROJECTED-CAPACITIVE (PCAP) TOUCHSCREEN

Various configurations and arrangements for touchscreens are disclosed to accommodate for one or more optical discontinuities that can be present within these touchscreens. When the one or more optical discontinuities are present, these configurations and arrangements of the touchscreens present a single layer of transparent conductive material that can be difficult to perceive by a human eye when viewing the touchscreens. Additionally, various edge correction techniques are disclosed to adjust mutual capacitances along a perimeter of the touchscreens. These edge correction techniques adjust mutual capacitances such that the values of the mutual capacitances are substantially uniform throughout. 1. A touchscreen , comprising:a transparent substrate; andelectrode patterns disposed on the transparent substrate using a fabrication process having an etch resolution, the electrode patterns each including a plurality of electrode pads and a plurality of transparent floating islands, each of the plurality of transparent floating islands being adjacent to a respective electrode pad of the plurality of electrode pads and separated from the respective electrode pad by at least a predetermined distance dependent on the etch resolution of the fabrication process,wherein the electrode patterns are configured to reduce optical discontinuities among the plurality of electrode pads and the plurality of floating islands through boundary alignment achieved in accordance with the etch resolution.2. The touchscreen of claim 1 , wherein the etch resolution is approximately 200 microns.3. The touchscreen of claim 1 , wherein the fabrication process comprises a screen printing process.4. The touchscreen of claim 1 , wherein the electrode patterns include a first electrode pattern on a first transparent substrate surface and a second electrode pattern on a second transparent substrate surface.5. The touchscreen of claim 4 , wherein the first and second transparent substrate surfaces ...

METHOD OF ETCHING COPPER LAYER AND MASK

A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately. 1. A method of etching a copper layer of a target object including , on the copper layer , a first mask having a pattern to be transferred onto the copper layer , the method comprising:etching the copper layer by using plasma of a first gas containing a hydrogen gas; andprocessing the target object by using plasma of a second gas containing a hydrogen gas and a gas that is deposited on the target object,wherein the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.2. The method of claim 1 , further comprising:forming the pattern of the first mask by etching a stacked body having a first layer that is made of silicon nitride or silicon oxide and is formed on the copper layer and a second layer that is made of TiN and is formed on the first layer,wherein the forming of the pattern of the first mask comprises:etching the second layer by using plasma of a chlorine-containing gas; andetching the first layer by using plasma of a fluorocarbon-based gas.3. The method of claim 2 ,wherein a second mask containing carbon is formed on the second layer of the first mask, andthe forming of the pattern of the first mask further comprises removing the second mask by exposing the second mask into plasma of an oxygen-containing gas between the etching of the ...

METHOD OF MANUFACTURING A MASK

A method of manufacturing a mask includes forming a first hole in a base material using a laser, the first hole penetrating through the base material from a first surface to a second surface different than the first surface, and expanding the first hole using an etchant to form a second hole. 1. A method of manufacturing a mask , the method comprising:forming a first hole in a base material using a laser, the first hole penetrating through the base material from a first surface to a second surface different from the first surface; andexpanding the first hole using an etchant to form a second hole.2. The method of claim 1 , wherein a cross-sectional area of at least one of the first hole and the second hole decreases from the first surface to the second surface.3. The method of claim 1 , wherein expanding the first hole comprises removing an oxide formed on an inner surface of the first hole.4. The method of claim 1 , wherein: {'br': None, 'i': X', 'X', '*T/, '2=1−2tan (θ); and'}, 'a first linear distance crossing the first hole at the first surface and a second linear distance crossing the first hole at the second surface satisfy the following equation{'b': 1', '2', '0, 'X denotes the first linear distance, X denotes the second linear distance, T denotes a thickness of the base material, and denotes an angle the first hole between the second surface and the first surface.'}5. The method of claim 1 , wherein the first hole and the second hole comprise tapered surfaces.6. The method of claim 5 , wherein the tapered surfaces of the first hole and the second hole are parallel to one another.7. The method of claim 1 , further comprising:forming a first blocking film on the first surface of the base material, the first blocking film being configured to resist the etchant,wherein the first blocking film comprises a first opening exposing a portion of the first surface of the base material.8. The method of claim 7 , wherein sizes of the first opening in the first blocking ...

Deposition of Discrete Nanoparticles on a Nanostructured Surface of an Implant

A method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises forming a nanoscale roughened surface on the microscale roughened surface. The method further comprises the act of depositing discrete nanoparticles on the nanoscale roughened surface though a one-step process of exposing the roughened surface to a solution including the nanoparticles. The nanoparticles comprise a material having a property that promotes osseointegration. 1. A method of forming an implant to be implanted into living bone , the method comprising the acts of:roughening at least a portion of the implant surface to produce a microscale roughened surface;forming a nanoscale roughened surface on the microscale roughened surface; anddepositing discrete nanoparticles on the nanoscale roughened surface though a one-step process of exposing the nanoscale roughened surface to a solution including the nanoparticles, the nanoparticles comprising a material having a property that promotes osseointegration.2. The method of claim 1 , wherein the implant is made of a metal selected from the group consisting of tantalum claim 1 , cobalt claim 1 , chromium claim 1 , titanium claim 1 , stainless steel claim 1 , or alloys thereof.3. The method of claim 1 , wherein the implant is made from a material including ceramic.4. The method of claim 1 , wherein the implant is a dental implant.5. The method of claim 4 , wherein the portion of the implant surface is a threaded bottom portion for facilitating bonding with bone.6. The method of claim 1 , wherein the act of forming a nanoscale roughened surface over the microscale roughened surface comprises:providing a vapor of a nanostructuring material; anddepositing the vapor on the microscale roughened surface to form nanostructures of the nanostructuring material on the implant surface.7. The ...

METHOD OF MANUFACTURING VOICE COIL

Provided is a method of manufacturing a voice coil, and more particularly, a method of manufacturing a voice coil in which a coil pattern is formed on a wafer level package. The method includes (a) forming a first coil pattern including a first area in which a first seed metal layer is exposed upward, a second area in which a first passivation layer for forming a via hole in the first area is formed, and a third area in which a first photoresist layer is formed in a portion of the first area and the second area on an upper surface of a wafer, (b) filling an inside of the via hole formed in the first coil pattern with a conductive material and forming first coil windings, and (c) removing the first photoresist layer formed in the third area. 1. A method of manufacturing a voice coil , comprising:(a) forming a first coil pattern including a first area in which a first seed metal layer is exposed upward, a second area in which a first passivation layer for forming a via hole in the first area is formed, and a third area in which a first photoresist layer is formed in a portion of the first area and the second area on an upper surface of a wafer;(b) filling an inside of the via hole formed in the first coil pattern with a conductive material and forming first coil windings; and(c) removing the first photoresist layer formed in the third area.2. The method of claim 1 , wherein step (a) includes:forming the first seed metal layer on the upper surface of the wafer;selectively removing the first seed metal layer formed in an area of the second area;forming the first passivation layer on surfaces of the wafer and the first seed metal layer;selectively removing the first passivation layer formed in areas other than the second area; andentirely forming the first photoresist layer on the first seed metal layer and the remaining first passivation layer, and selectively removing the first photoresist layer present on the first seed metal layer exposed upward through a ...

ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS

Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal. 1. A method of etching a metal on a substrate , the metal being selected from tungsten (W) and cobalt (Co) , comprising:(a) exposing a surface of the metal to a halide chemistry to form a modified halide-containing surface layer; and(b) applying a bias voltage to the substrate while exposing the modified halide-containing surface layer to a plasma to thereby remove the modified halide-containing surface layer.2. The method of claim 1 , wherein the plasma is an argon plasma and the bias voltage in (b) is between about 50 Vb and 80 Vb.3. The method of claim 1 , wherein (a) comprises exposing the surface of the metal to a plasma.4. The method of claim 3 , wherein a bias is applied to the substrate during (a).5. The method of claim 3 , wherein the bias voltage during (a) is equal to or less than 100 Vb.6. The method of claim 3 , wherein the bias voltage during (a) is equal to or less than 50 Vb.7. The method of claim 1 , wherein the metal is tungsten (W).8. The method of claim 7 , wherein (a) comprises exposing the surface of the metal to a chlorine-containing plasma.9. The method of claim 8 , wherein the substrate temperature during (a) is less than 150° C.10. The method of claim 8 , wherein the chlorine-containing plasma is generated from a Cl/BClmixture.11. The method of claim 10 , wherein the Cl/BClmixture is between 0.5% and 10% (volumetric) BCl.12. The method of claim 1 , wherein the ...

PATTERN FORMING METHOD

A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask. 1. A pattern forming method comprising:forming a first pattern of a first material on a first film;forming a block copolymer layer including a first block polymer chain and a second block polymer chain, on the first pattern;forming a second pattern by microphase-separating the block copolymer layer, and removing one of the separated first block polymer chain or the second block polymer chain;forming a second film that covers the second pattern by applying a second material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern;selectively removing the second film until the second pattern is exposed;forming a third pattern by selectively removing portions of the first pattern exposed in openings of the third pattern using the second pattern of the second film as a mask, the third pattern including a first portion that includes a portion of the first pattern and the second film on the first pattern and partially, and a second portion that includes the second film which is formed directly on the first film, wherein the second portion has a film thickness that is greater than a thickness of the ...

SELF-ORGANIZATION MATERIAL AND PATTERN FORMATION METHOD

A pattern formation method according to an embodiment includes providing a substrate in which protrusions each having a tapered shape are provided on a main surface. The method further includes supplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another. 1. A pattern formation method comprising:providing a substrate in which protrusions each having a tapered shape are provided on a main surface; andsupplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another.2. The method of claim 1 , wherein each of the spherical particles is a core-shell particle including a core and a shell covering the core.3. The method of claim 2 , further comprising claim 2 , after the spherical particles are arranged claim 2 , removing the protrusions and the shell of each of the spherical particles such that the core of each of the spherical particles remains.4. The method of claim 3 , further comprising processing the main surface by using the remaining cores as a mask.5. The method of claim 1 , wherein the protrusions are provided on the main surface in such a manner that each of the protrusions is positioned on any of lattice points of a triangular lattice.6. The method of claim 1 , wherein two or more of the protrusions are provided on the main surface such that each of them is positioned on any of lattice points of a triangular lattice claim 1 , and the remainders of the protrusions are provided on the main surface such that each of them is positioned on any of median points of triangles ...

POSITIVE MICROCONTACT PRINTING

A process for positive microcontact printing, including inking a patterned mold with a thiol; contacting the mold with a metal surface of a substrate; backfilling the metal surface with a solution containing an aromatic amine to form a backfilling layer; etching the metal surface of the substrate; and rinsing the substrate to remove the backfilling layer. 1. A process for positive microcontact printing , comprising:inking a patterned mold with a thiol;contacting the mold with a metal surface of a substrate;backfilling the metal surface with a solution containing an aromatic amine to form a backfilling layer;etching the metal surface of the substrate; andrinsing the substrate to remove the backfilling layer.2. The process of claim 1 , wherein the aromatic amine is represented by formula (I){'br': None, 'sub': 'n', 'sup': 'm+', '[Ar—(NRR′)]\u2003\u2003(I)'}wherein Ar represents an aryl group having 6 to 18 carbon atoms or a heteroaromatic group having 4 to 17 carbon atoms; each of R and R′ independently represents a hydrogen atom, a methyl group, or a ethyl group; n is 1, 2, or 3; and m is 0, 1, 2, or 3.3. The process of claim 2 , wherein n is 2.4. The process of claim 2 , wherein the aromatic amine is selected from the group consisting of 2 claim 2 ,4 claim 2 ,6-trimethyl-benzene-1 claim 2 ,3 claim 2 ,5-triamine claim 2 , tri-hydrochloride; 3 claim 2 ,6-diaminoacridine hydrochloride claim 2 , 3 claim 2 ,7-bis(Dimethylamino)phenazathionium chloride claim 2 , 9-aminoacridine dydrochloride and 2-(4-dimethylaminophenylazo)benzoic acid.5. The process of claim 1 , wherein the surface is backfilled with a solution containing an aromatic amine to form a backfilling layer through dewetting.6. The process of claim 1 , wherein the aromatic amine is dissolved in a mixture of at least one monohydroxyl alcohol and one or more glycol ethers to obtain the solution containing the aromatic amine.7. The process of claim 5 , wherein the monohydroxyl alcohol is selected from the group ...

Methods Of Forming Self-Aligned Vias

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via. 1. A processing method comprising:providing a substrate with a substrate surface comprising a first surface of a first material and a second surface of a second material different from the first material;forming a mask on the substrate, the mask having an opening exposing at least a portion of the first surface and the second surface;expanding the first material to orthogonally grow an expanded first material to a height greater than the second surface; andremoving the mask from the substrate to leave the first material extending orthogonally from the substrate surface.2. The method of claim 1 , wherein expanding the first material causes the expanded first material to expand straight up from the first surface through the opening in the mask to a height greater than the mask.3. The method of claim 1 , wherein expanding the first material comprises one or more of oxidizing or nitriding the first material.4. The method of claim 3 , wherein the first material comprises one or more of Co claim 3 , Mo claim 3 , W claim 3 , Ta claim 3 , Ti claim 3 , Ru claim 3 , Rh claim 3 , Cu claim 3 , Fe claim 3 , Mn claim 3 , V claim 3 , Nb claim 3 , Hf claim 3 , Zr claim 3 , Y claim 3 , Al claim 3 , Sn claim 3 , Cr or La.5. The method of claim 4 , wherein oxidizing or nitriding the first material comprises exposing the first material to an oxidizing agent or nitriding agent comprising one or more of O claim 4 , O claim 4 , NO claim 4 , HO claim 4 , HO claim 4 , CO claim 4 , CO claim 4 , NH claim 4 , NH claim 4 , NO claim 4 , N claim 4 , N/Ar claim 4 , N/He or N/Ar/He.6. The method of claim 1 , wherein the first material comprises a metal and the second material ...

Methods and Systems for Site-Isolated Combinatorial Substrate Processing Using a Mask

Embodiments provided herein describe methods and systems for processing substrates. A substrate processing tool includes a housing having a sidewall and a lid. The housing defines a processing chamber. A substrate support is configured to support a substrate within the processing chamber. A plasma generation source is coupled to the housing and in fluid communication with the processing chamber through the lid of the housing. The plasma generation source is configured to provide a plasma activated species into the processing chamber. A mask is positioned within the processing chamber to at least partially shield the substrate from the plasma activated species. The mask includes a plurality of openings configured such that when the mask is in first and second positions, the plasma activated species passes through a respective first and second of the plurality of openings and causes first and second regions on the substrate to be processed. 1. A substrate processing tool comprising:a housing comprising a sidewall and a lid, the housing defining a processing chamber;a substrate support coupled to the housing and configured to support a substrate within the processing chamber;a plasma generation source coupled to the housing and in fluid communication with the processing chamber through the lid of the housing, the plasma generation source being configured to provide a plasma activated species into the processing chamber; anda first mask moveably coupled to the housing and positioned within the processing chamber to at least partially shield the substrate from the plasma activated species, the first mask comprising a plurality of openings configured such that when the first mask is in a first position, the plasma activated species passes through a first of the plurality of openings and causes a first region on the substrate to be processed, and when the first mask is in a second position, the plasma activated species passes through a second of the plurality of openings ...

METHOD FOR PRODUCING METAL-RESIN COMPLEX

Provided is a metal-resin complex in which a metal alloy and a resin composition that are heterogeneous materials are integrated with each other, and more particularly, a method for producing a metal-resin complex capable of improving bonding strength by producing a metal alloy having a more uniform etching surface using an alkaline aqueous solution to which a chelating agent is added and an acid aqueous solution to which the chelating agent and an amic acid are added, and injection-molding the resin composition by using the produced metal alloy. 1. A method for producing a metal-resin complex comprising:preparing a surface-etched metal alloy material; andinjection-molding a resin composition on a surface of the etched metal alloy material so that the metal alloy material and the resin composition are integrated with each other,wherein the preparing of the surface-etched metal alloy material includes:(i) a primary treatment process of treating the metal alloy material with an alkaline aqueous solution to which a chelating agent is added; and(ii) a secondary treatment process of etching the metal alloy material with an acid aqueous solution to which the chelating agent and an amic acid are added.2. The method of claim 1 , wherein the surface of the etched metal alloy material has an average inner diameter of 0.1 to 10 μm and an average surface roughness of 50 to 200 μm.3. The method of claim 1 , wherein the metal alloy material is any one selected from steel use stainless (SUS) claim 1 , an aluminum alloy claim 1 , or a magnesium alloy.4. The method of claim 1 , wherein the chelating agent is added in an amount of 0.001 to 0.5 parts by weight based on 100 parts by weight of the alkaline aqueous solution or the acid aqueous solution.5. The method of claim 1 , wherein the amic acid is added in an amount of 0.01 to 0.1 parts by weight based on 100 parts by weight of the acid aqueous solution.6. The method of claim 1 , wherein the primary treatment process is performed ...

ALUMINUM SELECTIVE ETCH

Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively. 1. A method of etching a patterned substrate , the method comprising:placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises an aluminum layer and a silicon-containing layer;flowing a chlorine-containing precursor into a remote plasma region within the substrate processing chamber and exciting the chlorine-containing precursor in a remote plasma in the remote plasma region to produce plasma effluents, wherein the remote plasma region is fluidly coupled with the substrate processing region through a showerhead;flowing the plasma effluents into the substrate processing region through the showerhead and selectively etching the aluminum layer.2. The method of wherein the chlorine-containing precursor is one of halogen-containing precursor comprises one or more of atomic chlorine claim 1 , molecular chlorine (Cl) claim 1 , hydrogen chloride (HCl) claim 1 , carbon tetrachloride (CCl) claim 1 , or boron trichloride (BCl).3. The method of wherein the aluminum layer and the silicon-containing layer are each exposed and selectively etching the aluminum layer comprises removing the aluminum layer at least fifteen times faster than ...

LASER-INDUCED ULTRASOUND GENERATOR AND METHOD OF MANUFACTURING THE SAME

Provided are a laser-induced ultrasound generator and a method of manufacturing the laser-induced ultrasound generator. The laser-induced ultrasound generator includes: a substrate including a plurality of nanostructures provided on a first surface of the substrate; and a thermoelastic layer provided on the first surface of the substrate, the thermoelastic layer being configured to generate an ultrasound by absorbing a laser beam incident onto a second surface of the substrate, the second surface facing the first surface. The nanostructures may be cylinder-shaped nano-pillars. 1. A laser-induced ultrasound generator comprising:a substrate comprising a plurality of nanostructures provided on a first surface of the substrate; anda thermoelastic layer provided on the first surface of the substrate, the thermoelastic layer being configured to generate an ultrasound by absorbing a laser beam incident onto a second surface of the substrate, the second surface facing the first surface.2. The laser-induced ultrasound generator of claim 1 , wherein the plurality of nanostructures comprise a plurality of cylinder-shaped nanopillars.3. The laser-induced ultrasound generator of claim 2 , wherein each of the plurality of nanopillars has a diameter of about 10 nm to about 1000 nm.4. The laser-induced ultrasound generator of claim 3 , wherein a gap between adjacent nanopillars is about 10 nm to about 1000 nm.5. The laser-induced ultrasound generator of claim 1 , wherein the thermoelastic layer comprises a metal or a polymer material.6. The laser-induced ultrasound generator of claim 1 , wherein the substrate comprises a laser beam-transmitting material.7. The laser-induced ultrasound generator of claim 1 , further comprising a matching layer provided on the thermoelastic layer claim 1 , wherein a surface of the matching layer faces the first surface of the substrate.8. The laser-induced ultrasound generator of claim 7 , wherein the matching layer comprises a polymer.9. The laser- ...

HEAT-ABSORBING MATERIAL AND PROCESS FOR PRODUCING SAME

Provided are a heat-absorbing material having high heat resistance and high wavelength selectivity, and a process for producing the same. The heat-absorbing material includes: a heat-resistant metal having the substantially same periodic structure in the light incidence plane as the wavelength of sunlight having a specific wavelength in the wavelength regions of visible light and near-infrared rays; and a cermet formed on the light incidence plane of the heat-resistant metal. Thus, there can be achieved desirable absorption and radiation characteristics being such that absorption is performed in the visible light region meanwhile reflection is performed in the infrared region. Furthermore, the cermet does not need complicated film-formation control, and therefore, the high heat resistance can be maintained. 1. Heat-absorbing material , comprising:a heat-resistant metal having a substantially same periodic structure in a light incidence plane as a wavelength of sunlight having a specific wavelength in wavelength regions of visible light and near-infrared rays; anda cermet formed on the light incidence plane of the heat-resistant metal.2. The heat-absorbing material according to claim 1 , wherein the cermet includes: a metal containing at least one of Mo claim 1 , W claim 1 , and Ta; and a ceramic containing Al2O3 or SiO2.3. The heat-absorbing material according to claim 1 , wherein the heat-resistant metal comprises any of tantalum claim 1 , tungsten claim 1 , molybdenum claim 1 , niobium claim 1 , titanium claim 1 , iron claim 1 , and an alloy containing the above-mentioned metals as a main component.4. The heat-absorbing material according to claim 1 , wherein cermet has a film thickness of not less than 100 nm and not more than 2000 nm.5. The heat-absorbing material according to claim 1 , wherein a metal film is formed between the heat-resistant metal and the cermet.6. The heat-absorbing material according to claim 5 , wherein the metal film contains at least one ...

THREE DIMENSIONAL NANOMETER FILTERS AND METHODS OF USE

Three dimensional nanoparticle filters are provided herein. In one embodiment a filter device includes a base material, alternating layers of sacrificial material between layers of structural material being deposited onto the base material to create a layered base material, and filter sidewalls etched into the deposited alternating layers of the layered base material to remove the layers of sacrificial material between the layers of structural material to form filter slots in the filter sidewalls as well as create channels between the filter sidewalls, where a size of the filter slots is selectable based on a thickness of the layers of sacrificial material utilized. 1. A method for creating a filter panel , comprising:providing a substrate panel; and alternatingly depositing layers of structural material and sacrificial material; and', 'etching away at least a portion of each of the layers of sacrificial material to create spacers that separate the layers of structural material, and, 'creating at least one filter sidewall on a surface of the substrate panel byto create filter slots.2. The method according to claim 1 , wherein at least a portion of the layers are created from a porous material.3. The method according to claim 1 , wherein the spacers are globular.4. The method according to claim 1 , wherein a rear surface of a second substrate panel is placed onto an upper surface of an uppermost layer of structural material.5. The method according to claim 1 , wherein the layers of structural material and sacrificial material are deposited on the substrate panel so that the at least one filter sidewall is continuous across the substrate panel.6. The method according to claim 5 , wherein the layers of structural material and sacrificial material are deposited on the substrate panel so that the at least one filter sidewall forms connected rectangles that extend from a top of the substrate panel to a bottom of the substrate panel.7. The method according to claim 6 , ...

MULTI-STEP METHOD AND APPARATUS FOR ETCHING COMPOUNDS CONTAINING A METAL

A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer. 1. A method of etching material , the method comprising the steps of:in a reaction chamber, exposing a material comprising a formula XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, to a first etch chemistry to form one or more first volatile compounds and a metal-depleted material;removing the one or more first volatile compounds from the reaction chamber;exposing the metal-depleted material to a second etch chemistry to react with the metal-depleted material to form one or more second volatile compounds; andremoving the one or more second volatile compound.2. The method of claim 1 , wherein X is a metal selected from the group consisting of Group 13-16 metals and transition metals.3. The method of claim 1 , wherein Y is a metal selected from the group consisting of Group 13-16 metals and transition metals.4. The method of claim 1 , wherein X is aluminum and V is titanium.5. The method of claim 1 , further comprising repeating the steps of exposing a material claim 1 , removing the one or more first volatile compounds claim 1 , exposing the metal-depleted material to a second etch chemistry claim 1 , and removing the one or more second volatile compounds claim 1 , until a desired amount of the material is removed.6. The method of claim 1 , wherein the first etch chemistry is derived from an etch reactant comprising chlorine claim 1 , bromine claim 1 , iodine claim 1 , molecules including chlorine claim 1 , molecules including bromine claim 1 , ...

Process For Improving The Electrical And Optical Performance Of A Transparent Electrically Conductive Material Based On Silver Nanowires

The invention relates to a process for improving the electrical and optical performance of a transparent electrically conductive material having silver nanowires. The invention also relates to a process for manufacturing a film made of a transparent electrically conductive material, such as a transparent electrode, a transparent heating film, or a film for electromagnetic shielding. The process of the invention includes the following steps: a) a step of bringing silver nanowires into contact with an acid solution, this solution having a pH lower than 7, preferably lower than 3; and b) a step of eliminating the acid. The field of application of the invention is in particular the field of optoelectronics. 1. A process for improving the electrical and optical performances of a transparent electrically conductive material comprising silver nanowires , wherein the process comprises:a) a step of bringing the silver nanowires into contact with a solution of an acid, this solution having a pH lower than 7; andb) a step of removing the acid.2. The process as claimed in claim 1 , wherein steps a) and b) are carried out on the silver nanowires before the transparent electrical material is manufactured.3. The process as claimed in claim 1 , wherein steps a) and b) are carried out once the transparent electrical material has been manufactured.4. The process as claimed in claim 1 , wherein in step a) the acid solution is an aqueous solution of nitric acid claim 1 , or of sulfuric acid claim 1 , or of acetic acid claim 1 , or of formic acid claim 1 , or of phosphoric acid claim 1 , or of trifluoroacetic acid claim 1 , said acid solution having an acid content higher than or equal to 0.2% and lower than or equal to 20% by weight of acid relative to the total weight of the solution.5. The process as claimed in claim 1 , wherein in step a) the solution is a nitric acid solution and in that the contact duration is comprised between 2 and 10 min claim 1 , preferably 3 to 7 min claim 1 ...

SHEET FOR MANUFACTURING SENSOR SHEET, METHOD FOR MANUFACTURING SHEET FOR MANUFACTURING SENSOR SHEET, SENSOR SHEET FOR TOUCH PAD, AND METHOD FOR MANUFACTURING SENSOR SHEET FOR TOUCH PAD

A sensor sheet-producing sheet of the present invention includes a base layer; and a metal deposition layer having a thickness of 0.01 to 1.0 μm which is formed on one surface of the base layer. A method for manufacturing a sensor sheet-producing sheet of the present invention includes a deposition step in which a metal deposition layer having a thickness of 0.01 to 1.0 μm is deposited on one surface of a base layer. In the method for manufacturing a sensor sheet-producing sheet of the present invention, it is preferable that the deposition be vacuum deposition. 1. A sensor sheet-producing sheet comprising:a base layer; anda metal deposition layer having a thickness of 0.01 to 1.0 μm which is formed on one surface of the base layer.2. A method for manufacturing a sensor sheet-producing sheet , comprising: a deposition step in which a metal deposition layer having a thickness of 0.01 to 1.0 μm is deposited on one surface of a base layer.3. The method for manufacturing a sensor sheet-producing sheet according to claim 2 , wherein the deposition is vacuum deposition.4. A sensor sheet for a touch pad comprising:a base layer;an X coordinate detection electrode wiring;a Y coordinate detection electrode wiring;a plurality of leading wirings;a first insulating layer;jumper lines; anda second insulating layer, whereinthe X coordinate detection electrode wiring, the Y coordinate detection electrode wiring, and the leading wirings are formed on one surface of the base layer and are respectively formed of a metal deposition layer having a thickness of 0.01 to 1.0 μm,the X coordinate detection electrode wiring/the Y coordinate detection electrode wiring has a wiring pattern which is formed of Y direction electrode portions/X direction electrode portions in a plurality of columns along a Y direction/an X direction and in which the Y direction electrode portions/the X direction electrode portions of the respective columns are comprised of an elongated electrode portion which is ...

METHOD OF FABRICATING A POLYMER FRAME WITH A RECTANGULAR ARRAY OF CAVITIES

An array of chip sockets defined by an organic matrix framework surrounding sockets through the organic matrix framework and a method of fabrication, the chip sockets are characterized by being rectangular with smooth walls that meet at corners that have radii of curvature of less than 100 microns thereby facilitating a close fit of each socket to the intended chip size, enabling compact chip packaging and miniaturization. 1. A framework defining an array of rectangular cavities , each of said cavities for receiving a rectangular chip , said framework comprising a dielectric material having a polymer matrix.2. The framework of claim 1 , wherein said cavities are substantially rectangular and are fabricated to within tolerances of +−25 microns.3. The framework of claim 1 , wherein walls of said cavities are substantially perpendicular to the framework.4. The framework of claim 1 , wherein corners of said rectangular cavities have a radius of curvature of less than 100 microns.5. The framework of claim 1 , wherein corners of said rectangular cavities have a radius of curvature of less than 50 microns.6. The framework of wherein said polymer matrix is polyimide claim 1 , epoxy or BT (Bismaleimide/Triazine) or their blends.7. The framework of claim 1 , wherein said dielectric material further comprises at least one of ceramic fillers glass claim 1 , fibers claim 1 , and via posts embedded within the polymer matrix.8. The framework of further comprising elongated sacrificial copper sectioning elements that are etchable to assist singulation of the framework.9. The framework of wherein the elongated sacrificial copper sectioning elements cross each other to form a framework.10. The framework of wherein the cavities may have dimensions in the range of from about 0.9 mm×0.9 mm claim 1 , up to about 31×31 mm.11. The framework of having a depth in the range of 50 microns to 300 microns. The framework of wherein each cavity has a depth of at least 10 microns more than the ...

ELECTRODE PATTERN, MANUFACTURING METHOD THEREOF, AND TOUCH SENSOR INCLUDING THE SAME

A transparent electrode pattern includes a first electrode including a first lower conductive layer and a first upper conductive layer located on the first lower conductive layer and a second electrode spaced apart from the first electrode and including a second lower conductive layer and a second upper conductive layer positioned on the second lower conductive layer. The first and second lower conductive layers may include a metal nanowire. The first and second upper conductive layers may include a transparent conductive material that is dry-etchable. 1. A transparent electrode pattern , comprising:a first electrode including a first lower conductive layer and a first upper conductive layer located on the first lower conductive layer; anda second electrode spaced apart from the first electrode and including a second lower conductive layer and a second upper conductive layer positioned on the second lower conductive layer,wherein the first and second lower conductive layers include a metal nanowire, andthe first and second upper conductive layers include a transparent conductive material that is dry-etchable.2. The transparent electrode pattern as claimed in claim 1 , wherein:the first and second upper conductive layers include GTO (gallium tin oxide).3. The transparent electrode pattern as claimed in claim 2 , wherein:an edge of the first lower conductive layer and an edge of the first upper conductive layer are substantially aligned, andan edge of the second lower conductive layer and an edge of the second upper conductive layer are substantially aligned.4. The transparent electrode pattern as claimed in claim 3 , wherein:the first and second lower conductive layers further include an overcoat.5. The transparent electrode pattern as claimed in claim 4 , wherein:the overcoat extends to be positioned between the first lower conductive layer and the second lower conductive layer.6. A transparent electrode pattern claim 4 , comprising:a first electrode including a ...

METHOD OF PRODUCING A DECORATED COMPONENT FOR A TIMEPIECE OR PIECE OF JEWELLERY, AND COMPONENT MADE BY THE METHOD

The method makes it possible to produce a decorated component for a timepiece or piece of jewellery. This component provided with the decoration may be, for example, a watch hand. To produce said component, a base substrate is used and a micromachining operation is performed on or in the base substrate to obtain an upper part of the component, which is provided with the decoration. The decoration is produced through the thickness of the upper part and in a programmed pattern. Thereafter, the upper part is placed on a luminescent or coloured substance to obtain the component. 1. A method for producing a component provided with a decoration for a timepiece or piece of jewellery , wherein the method includes the steps of:taking a base substrate, and performing a micromachining operation on or in said base substrate in order to obtain an upper part of the component, which is provided with a decoration of micrometric structure traversing the thickness of the upper part in a programmed pattern, andfixing the upper part on a luminescent or coloured substance, or coating a back portion of the upper part with the luminescent or coloured substance.2. The method for producing a component provided with a decoration according to claim 1 , wherein claim 1 , after taking the base substrate and before fixing or coating the back of the upper part with the luminescent or coloured substance claim 1 , the method includes the steps of:depositing a layer of positive or negative photosensitive resin on the base substrate,placing a contour mask of the upper part and of the decorative pattern to be made on the photosensitive resin,illuminating the resin through the mask,removing the illuminated resin portions, if the photosensitive resin is of the positive type, or removing the non-illuminated resin portions, if the photosensitive resin is of the negative type,filling the portions removed from the resin with a metal, andremoving all the resin and detaching the upper part with the obtained ...

METHOD FOR MANUFACTURING TOUCH PANEL

A method for manufacturing a touch panel includes the following procedures. A base plate is provided. An indium tin oxide film is formed on the base plate. The indium tin oxide film is etched to form a plurality of first and second electrodes which are alternatively arranged according to columns on the base plate and insulated from each other, and the first electrodes in a column along a first direction are electrically coupled to each other. A plurality of insulated layers is formed on the first and second electrodes. A plurality of conductive connectors are formed on the plurality of insulated layers via an ink jet printing method to electrically interconnect with the second electrodes in a column along the second direction intersecting the first direction. The widths of the conductive connectors are reduced below 10 μm via a laser processing method. 1. A method for manufacturing a touch panel , the method comprising:providing a base plate;forming an indium tin oxide film on the base plate;etching the indium tin oxide film to form a plurality of first and second electrodes which are alternatively arranged according to columns on the base plate and insulated from each other, the first electrodes in a column along a first direction being electrically coupled to each other, the second electrodes in a column along a second direction intersecting the first direction having separated patterns;forming a plurality of insulated layers on the plurality of first and second electrodes, each insulated layer overlapping a portion of each two neighboring second electrodes in a column along the second direction and a portion of each two first electrodes positioned adjacent to the two neighboring second electrodes;forming a plurality of conductive connectors on the plurality of insulated layers via an ink jet printing method to electrically interconnect with the second electrodes in a column along the second direction; anddiminishing the widths of the plurality of conductive ...

SEMICONDUCTOR DEVICE PACKAGE SUBSTRATE HAVING A FIDUCIAL MARK

A method for forming a semiconductor device package substrate including a fiducial mark is provided. The method of forming the package substrate includes forming a dielectric layer over a lower portion of the package substrate. A metal layer is formed over a fiducial region of the package substrate. The metal layer is etched to form a first signal line in the fiducial region. A passivation layer is formed over the first signal line. The passivation layer is etched over the first signal line to form a fiducial mark. 1. A method of forming a package substrate , comprising:forming a dielectric layer over a lower portion of the package substrate;forming a metal layer over a fiducial region of the package substrate;etching the metal layer to form a first signal line in the fiducial region;forming a passivation layer over the first signal line; andetching the passivation layer over the first signal line to form a fiducial mark.2. The method of claim 1 , wherein the etching the metal layer further comprises:forming a second signal line on a first side of the fiducial region and a third signal line on a second side of the fiducial region.3. The method of claim 1 , wherein the first signal line has an extension portion outside the fiducial region claim 1 , wherein the first signal line is wider in the fiducial region than in the extension portion.4. The method of claim 1 , wherein the fiducial region has a bottom fully covered by the first signal line.5. The method of claim 1 , wherein the etching the metal layer is further characterized as forming a second signal line in the fiducial region.6. The method of claim 5 , wherein the etching the metal layer is further characterized as forming a third signal line in the fiducial region.7. The method of claim 6 , wherein the first signal line is between the second signal line and the third signal line.8. The method of claim 1 , wherein the passivation layer comprises oxide.9. The method of claim 8 , wherein the passivation layer ...

Process of Producing a Ceramic Matrix Composite

A process of producing a ceramic matrix composite (CMC) is provided the steps of preparing a ceramic material having a plurality of pores as a CMC substrate; heating a metal material to be molten wherein the metal material has a melting point lower than the CMC substrate and has a high activity; adding the CMC substrate to the molten metal material so that the molten metal material enters the pores of the CMC substrate to occur chemical reactions; removing the CMC substrate filled with the molten metal material; and cooling the removed CMC substrate filled with the molten metal material to form a CMC having a plurality of metal grains. Plain strain fracture toughness (K) of typical ceramic S26 is 4.53 MPa m. As a comparison, CMC has Kof 21.11 MPa mabout 466% of ceramic S26. 1. A process of producing a ceramic matrix composite (CMC) comprising the steps of:preparing a ceramic material having a plurality of pores as a CMC substrate;heating a metal material to be molten wherein the metal material has a melting point lower than the CMC substrate and has a high activity to react with the component of the CMC substrate;adding the CMC substrate to the molten metal material so that the molten metal material enters the pores of the CMC substrate to occur chemical reactions;removing the CMC substrate filled with the molten metal material; andcooling the removed CMC substrate filled with the molten metal material to form a CMC having a plurality of metal grains.2. The process of claim 1 , wherein the CMC substrate is formed of alumina claim 1 , silica claim 1 , zirconium dioxide claim 1 , silicon carbide claim 1 , copper oxide or silicon nitride.3. The process of claim 1 , wherein the metal material is aluminum claim 1 , nickel claim 1 , tin claim 1 , magnesium claim 1 , beryllium claim 1 , chromium claim 1 , iron claim 1 , zinc claim 1 , zirconium claim 1 , copper claim 1 , or titanium and their alloys.4. The process of claim 1 , wherein the CMC is subject to a step of ...

ALUMINUM AIRFOIL WITH TITANIUM COATING

An airfoil includes an aluminum airfoil body with a pressure side, suction side, leading edge and trailing edge; and a titanium foil layer covering at least part of one of the pressure side and the suction side. 1. An airfoil comprising:an aluminum airfoil body with a pressure side, suction side, leading edge and trailing edge; anda titanium foil layer covering at least part of one of the pressure side and the suction side.2. The airfoil of claim 1 , wherein the titanium foil layer covers the entire pressure side.3. The airfoil of claim 1 , wherein the titanium foil layer covers the entire suction side.4. The airfoil of claim 1 , wherein the titanium foil layer covers at least part of both of the pressure side and the suction side.5. The airfoil of claim 1 , wherein the titanium foil layer comprises:a first titanium foil sheet covering at least part of the pressure side; anda second titanium foil sheet covering at least part of the suction side.6. The airfoil of claim 1 , and further comprising:a sheath to define the leading edge of the airfoil.7. The airfoil of claim 5 , wherein the titanium foil layer extends under the sheath.8. The airfoil of claim 1 , wherein the titanium foil layer is about 0.127 mm (0.005 inches) thick.9. The airfoil of claim 1 , and further comprising:adhesive bonding the titantium foil layer to the airfoil.10. The airfoil of claim 8 , wherein the adhesive is scrim supported adhesive or weave supported adhesive.11. A method for making an airfoil comprising:treating the bonding surface of an aluminum airfoil;treating the bonding surface of a titanium foil sheet;placing an adhesive on the bonding surface of the aluminum airfoil; andpressing the titanium foil sheet onto the adhesive.12. The method of claim 11 , and further comprising:smoothing the surface of the titanium foil sheet.13. The method of claim 12 , and further comprising:autoclaving the airfoil.14. The method of claim 12 , wherein the step of smoothing the surface of the titanium ...

METAL PLATE, METHOD OF MANUFACTURING METAL PLATE, AND METHOD OF MANUFACTURING MASK BY USE OF METAL PLATE

The object of the present invention is to provide a metal plate having an excellent transportability. A maximum value of a steepness degree at a central area in a width direction of the metal plate is not more than 0.4%. In addition, the maximum value of the steepness degree at the central area is not more than a steepness degree at one end side area, and is not more than a steepness degree at the other end side area. Further, a difference between the maximum value of the steepness degree at the one end side area and the maximum value of the steepness degree at the other end side area is not more than 0.4%. 1. A method of manufacturing a metal plate to be used for manufacturing a mask by forming a plurality of through-holes in the metal plate , the method comprising:a rolling step of rolling a base metal to obtain the metal plate; anda cutting step of cutting off one end and the other end in a width direction of the metal plate over a predetermined range in the width direction;wherein:the through-holes of the mask are formed by etching the elongated metal plate that is being transported,the metal plate after the cutting step has at least partially a corrugation owing to a difference in lengths of the metal plate in a longitudinal direction depending on a position in the width direction of the metal plate;when a percentage of a height of the corrugation with respect to a cycle in the longitudinal direction of the corrugation of the metal plate after the cutting step is referred to as steepness degree, the following three conditions (1) to (3) are satisfied:(1) a maximum value of the steepness degree at a central area in the width direction of the metal plate after the cutting step is not more than 0.4%;(2) the maximum value of the steepness degree at the central area is not more than a maximum value of the steepness degree at one end side area in the width direction of the metal plate after the cutting step, and is not more than a maximum value of the steepness ...

Fabrication of Iridium Oxide pH Sensors and Sensory Arrays

A method of fabricating amorphous iridium oxide film pH sensors and microfluidic devices incorporating the pH sensors. The present invention provides a fabrication method for sol-gel based iridium oxide (IrOx) thin film pH sensors and microelectrodes. The invention further provides microelectrode arrays produced by the fabrication methods and microfluidic devices including the microelectrodes and microelectrode arrays. In one aspect, the invention is a method for fabricating a microelectrode pH sensor. 1. A method for fabricating a sol-gel based iridium oxide pH sensor comprising the steps of:(a) depositing at least one metal layer on a substrate;(b) coating the substrate with a photoresist layer and photolithographically creating a pattern of an electrode;(c) etching the at least one metal layer according to the pattern to define a sensor configuration;(d) supplying a microfluidic mold having a reservoir region and a channel;(e) aligning the microfluidic mold onto the sensor configuration created in step (c) so that the channel aligns with the electrode;(f) dispensing an iridium oxide sol-gel solution onto the sensor configuration via the reservoir to create a pH sensing electrode comprising iridium oxide;(g) detaching a polymer layer from the sensor configuration;(h) thermally curing the pH sensing electrode created in step (f);(i) coating the pH sensing electrode with an encapsulation layer; and(j) opening a sensing electrode site, thereby producing the pH sensor.2. (canceled)3. The method of wherein the microfluidic mold is made by pouring and curing a polymer on a patterned mold having a reservoir region and one or more channels and then peeling the polymer layer off of the patterned mold.4. The method of further comprising the step of forming a pattern on the encapsulation layer created in step (i) claim 1 , depositing at least one second metal layer on the pH sensing array and then opening the sensing electrode sites.5. The method of wherein the substrate is ...

ANISOTROPIC ETCHING OF METALLIC SUBSTRATES

In some examples, a method includes forming a photoresist layer on a surface of a metallic substrate and developing the photoresist layer to define a pattern exposing a portion of the surface of the metallic substrate. The method also may include forming an electrically conductive layer on a surface of the photoresist layer and the exposed portions of the surface of the metallic substrate. The electrically conductive layer contacts the exposed portions of the surface of the metallic substrate. The method may further include submerging the substrate, the photoresist layer, and the electrically conductive layer in an electrolyte solution; and applying a voltage to between a cathode and an anode submerged in the electrolyte solution to anisotropically etch the metallic substrate where the electrically conductive layer contacts the exposed portions of the surface of the metallic substrate to form at least one feature in the metallic substrate. 1. A method comprising:forming a photoresist layer on a surface of a metallic substrate;developing the photoresist layer to define a pattern exposing a portion of the surface of the metallic substrate;forming an electrically conductive layer on a surface of the photoresist layer and the exposed portions of the surface of the metallic substrate, wherein the electrically conductive layer contacts the exposed portions of the surface of the metallic substrate; andsubmerging the substrate, the photoresist layer, and the electrically conductive layer in an electrolyte solution; andapplying a voltage between a cathode and an anode submerged in the electrolyte solution to anisotropically etch the metallic substrate where the electrically conductive layer contacts the exposed portions of the surface of the metallic substrate to form at least one feature in the metallic substrate.2. The method of claim 1 , wherein forming the electrically conductive layer on the surface of the photoresist layer and the exposed portions of the surface of the ...

SIDEWALL SPACER PATTERNING METHOD USING GAS CLUSTER ION BEAM

A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern. 1. A method for patterning a substrate , comprising:receiving a substrate having a patterned layer, the patterned layer defining a first mandrel pattern, wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern;partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; andselectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.2. The method of claim 1 , wherein the patterned layer includes a patterned photo-sensitive material claim 1 , and the first material layer includes a silicon containing material claim 1 , a ...

Thin Data Reader Cap

A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface. 1. An apparatus comprising a magnetoresistive stack having a less than 4 nm reader width offset and comprising a magnetically free layer contacting a bi-layer cap comprising a cap layer and a first mask layer , the cap layer deposited with having a width equal to or greater than that of the first mask layer as measured perpendicular to a longitudinal axis of the magnetoresistive stack and with a thickness of 4 nm or less as measured parallel to the longitudinal axis of the magnetoresistive stack on an air bearing surface (ABS) , the cap layer having a thickness of 2 nm or more , decoupling the magnetically free layer from a first shield , and contacting the magnetically free layer and the first shield after the first mask layer is removed.2. The apparatus of claim 1 , wherein the first mask layer has a vertical sidewall oriented parallel to the longitudinal axis of the magnetoresistive stack.3. The apparatus of claim 1 , wherein the cap and first mask layers are different materials.4. The apparatus of claim 3 , wherein the cap layer comprises a first polish stop material and the first mask layer comprises a second material which can be removed by reactive etch.5. The apparatus of claim 1 , wherein the magnetoresistive stack comprises a fixed magnetization structure having a greater width than the free layer.6. The apparatus of claim 1 , wherein the magnetoresistive stack contacts first and second shields along the longitudinal axis claim 1 , the magnetoresistive stack disposed between and separated from first and second side shields along a transverse axis oriented perpendicular to the longitudinal axis.7. The apparatus of claim 1 , wherein a second mask ...

METAL PLATE, METHOD OF MANUFACTURING METAL PLATE, AND METHOD OF MANUFACTURING DEPOSITION MASK BY USE OF METAL PLATE

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm. 1. A method of manufacturing a metal plate to be used for manufacturing a deposition mask by forming a plurality of through-holes in the metal plate , the method comprising:a rolling step of rolling a base metal to obtain the metal plate; andan annealing step of annealing the metal plate obtained by the rolling step;wherein:the through-holes of the deposition mask are formed by etching the elongated metal plate,{'sup': '6', 'when a plurality of samples are taken out from the metal plate, a distance between two measurement points on each sample, which is measured before a heat treatment, is referred to as L1, a distance therebetween which is measured after the heat treatment is referred to as L2, and a thermal recovery rate F of each sample is defined by the following expression: F={(L1−L2)/L1}×10(ppm), the following conditions (1) and (2) are satisfied(1) an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm; and(2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm;the samples are obtained by cutting at least one sample metal plate, which is obtained by cutting the metal plate along a width direction of the metal plate, into two or more along a longitudinal direction of the metal plate; ...

ATOMIC LAYER ETCHING OF AL203 USING A COMBINATION OF PLASMA AND VAPOR TREATMENTS

A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface. 1. A method for performing atomic layer etching (ALE) on a substrate , comprising:(a) performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer;(b) performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer;(c) performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment;(d) repeating operations (a) through (c) until a predefined thickness has been etched from the substrate surface.2. The method of claim 1 , wherein performing the surface modification operation includes ...

PRINTHEADS HAVING MEMORIES FORMED THEREON

Printheads having memories formed thereon are disclosed. An example apparatus includes a printhead body comprising a first metal layer. The example apparatus also include a memory formed on the print-head body. The memory includes the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers. 1. An apparatus , comprising:a printhead body comprising a first metal layer; anda memory formed on the printhead body, the memory comprising the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers.2. The apparatus of claim 1 , wherein the printhead body further comprises a doped substrate layer claim 1 , a gate oxide layer claim 1 , and a polysilicon layer claim 1 , the gate oxide layer is positioned between the doped substrate layer and the polysilicon layer.3. The apparatus of claim 2 , wherein the printhead body further comprises a dielectric layer between the doped substrate layer and the first metal layer.4. The apparatus of claim 3 , wherein the printhead body further comprises a third metal layer claim 3 , the dielectric layer being positioned between the doped substrate layer and the third metal layer.5. The apparatus of claim 4 , wherein the third metal layer comprises a thermal ink jet resistor layer.6. The apparatus of claim 1 , wherein the thermal ink jet resistor layer comprises one or more layers.7. An apparatus claim 1 , comprising:an imaging device; a first metal layer on the printhead body; and', 'a memory on the first metal layer, the memory comprising a switching oxide layer, the first metal layer t, and a second metal layer, the first metal layer providing a first electrode, the second metal layer providing a second electrode., 'a printhead body for use with the imaging device, the printhead body comprising8. The apparatus of claim 7 , wherein the printhead body ...

ELECTROWETTING DISPLAY DEVICE AND METHOD FOR PREPARING THE SAME

The present invention discloses an electrowetting display device and a method for preparing the same. The electrowetting display device comprises several fluid chambers and a polar fluid accommodated in the fluid chambers, wherein the fluid chamber comprises a base; the base comprises a first electrode and a second electrode that are insulated from each other and an electro-conversion film, wherein the electro-conversion film is located on one side of the first electrode that is adjacent to the polar fluid; and wherein the contact angle between the electro-conversion film and the polar fluid converts in the range from a first contact angle to a second contact angle according to the magnitude of a voltage applied; the first contact angle is no larger than 25 degrees, and the second contact angle is no less than 90 degrees. 1. An electrowetting display device , comprising several fluid chambers and a polar fluid accommodated in the fluid chambers , wherein:the fluid chamber comprises a base, and the base comprises a first electrode and a second electrode that are insulated from each other and an electro-conversion film, wherein the electro-conversion film is located on one side of the first electrode that is adjacent to the polar fluid;wherein, the contact angle between the electro-conversion film and the polar fluid converts in the range from a first contact angle to a second contact angle according to a voltage applied to the first electrode;the first contact angle is no larger than 25 degrees, and the second contact angle is no less than 90 degrees.2. The electrowetting display device according to claim 1 , wherein claim 1 , the first contact angle is no larger than 10 degrees claim 1 , and the second contact angle is no less than 150 degrees.3. The electrowetting display device according to claim 1 , wherein claim 1 , the electro-conversion film is formed of a material of which the molecule includes a hydrophilic group and a hydrophobic group;wherein, the ...

METHOD OF PRODUCING NANOPARTICLE TAGGANTS FOR EXPLOSIVE PRECURSORS

A method includes producing an article having a substrate with a plurality of independent taggant layers that each include metal oxide nanocrystals doped with at least one Lanthanide element. Each taggant layer includes metal oxide nanocrystals doped with a different Lanthanide element than each other taggant layer. 1. A method for the production of a nanoparticle taggant , the method comprising:creating a printing mold by polishing a composite of metal and micron fibers to a substantially flat surface and etching away a portion of the metal from the composite to expose at least a portion of the micron fibers; zirconium oxide nanocrystals doped in a Lanthanide element; and', 'annealed metal oxide nanocrystals; and, 'applying a fluorescent ink to the printing mold, said fluorescent ink having increased intensities in fluorescence and comprisingtransferring the fluorescent ink from the printing mold to a substrate.2. The method of claim 1 , wherein the micron fibers comprise alumina carbide claim 1 , silicone carbide claim 1 , titanium carbide claim 1 , or combinations thereof.3. The method of claim 1 , wherein a molar concentration of the Lanthanide element to the metal oxide nanocrystals is between about 3% and about 5%.4. The method of claim 1 , further comprising annealing the annealed metal oxide nanocrystals at temperatures from about 500° C. to about 1300° C.5. The method of claim 1 , wherein the annealed metal oxide nanocrystals comprise a first group of annealed metal oxide nanocrystals and a second group of annealed metal oxide nanocrystals claim 1 , wherein annealing the first group of annealed metal oxide nanocrystals at a first annealing temperature; and', 'annealing the second group of annealed metal oxide nanocrystals at a second annealing temperature, and, 'the method further comprisesthe first annealing temperature is different than the second annealing temperature. This application is a divisional of co-pending U.S. patent application Ser. No. 13/566 ...

HIGH-CHI BLOCK COPOLYMERS FOR INTERCONNECT STRUCTURES BY DIRECTED SELF-ASSEMBLY

High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings. 2. The method of claim 1 , comprising transferring the etched domain pattern to the substrate claim 1 , thereby forming the openings for the conductive interconnects.3. The method of claim 1 , wherein the domain pattern has a bulk periodicity Lo claim 1 , and CDis about 2Lo.4. The method of claim 1 , wherein the bulk periodicity Lo has a value in the range of 4 nm to 100 nm.5. The method of claim 1 , wherein the initial openings include circular openings having a diameter of length d′ claim 1 , and CDis d′.6. The method of claim 1 , wherein the initial openings include bar-shaped openings having a long axis of length l′ claim 1 , a short axis of length w′ claim 1 , and an aspect ratio of l′:w′ between 1:1 and 100:1 claim 1 , and wherein CDis w′.7. The method of claim 1 , wherein the block copolymer is capable of forming a lamellar domain pattern.8. The method of claim 1 , wherein block A is a homopolymer of styrene.10. The method of claim 9 , wherein block B is a homopolymer of the carbonate repeat unit (A-4).12. The method of claim 11 , wherein block B is a homopolymer of the ester repeat unit (A-8).14. The method of claim 1 , wherein L′ comprises 1-25 fluorines.15. The method of claim 1 , wherein the block copolymer has a ...

THIN DATA READER CAP

A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface. 1. A method comprising:depositing a magnetoresistive stack having a magnetically free layer;forming a cap layer atop the magnetically free layer, the cap comprising a first material inert to reactive etching;depositing a first mask layer on the cap layer;forming a second mask layer on the first mask layer, the first and second layers being independently definable;patterning the first and second mask layers to a common reduced width;patterning the magnetoresistive stack;depositing an isolation structure and side shield structure;removing the second mask layer;removing the first mask layer; anddepositing a shield in contact with the cap layer, the cap layer decoupling the magnetically free layer from the shield.2. The method of claim 1 , wherein the first mask layer is removed with a different material removal process than the second mask layer.3. The method of claim 2 , wherein the second mask layer is removed with a reactive etch material removal process claim 2 , the first mask layer being inert to the reactive etch material removal process.4. The method of claim 3 , wherein the first mask layer is patterned prior to removal.5. The method of claim 1 , wherein the first mask layer protects the cap and magnetically free layer during at least one subsequent process prior to deposition of the shield.6. The method of claim 5 , wherein the first mask layer is removed immediately prior to shield deposition.7. The method of claim 3 , wherein the reactive etch material removal process comprises an inductively coupled plasma.8. The method of claim 1 , wherein the first mask layer masks the cap layer from a material removal process that removes the second mask ...

DEPOSITION MASK AND PRODUCTION METHOD OF DEPOSITION MASK

A wall surface of an opening of a deposition mask includes a first wall surface that extends from a first end toward a second surface, a second wall surface that extends from a second end toward a first surface, and a connection at which the first wall surface is connected to the second wall surface. When the opening is viewed from the first surface side along a normal direction of the first surface, the first end of the opening includes a first portion that extends in a first direction and has a first dimension and a second portion that extends in a second direction intersecting the first direction and a second dimension shorter than the first dimension. The first wall surface includes a first wall surface section that extends from the first portion toward the connection and a second wall surface section that extends from the second portion toward the connection. A height of the first wall surface section is lower than a height of the second wall surface section. 1. A deposition mask including openings , comprising:a first surface,a second surface that is located opposite to the first surface; anda wall surface including a first end that is an end located on the first surface and a second end that is an end located on the second surface;wherein the wall surface defines each of the openings,wherein the wall surface includes a first wall surface that extends from the first end toward the second surface, a second wall surface that extends from the second end toward the first surface, and a connection at which the first wall surface is connected to the second wall surface,wherein when the opening is viewed from the first surface side along a normal direction of the first surface, the first end of the opening includes a first portion that extends in a first direction and has a first dimension and a second portion that extends in a second direction intersecting the first direction and has a second dimension shorter than the first dimension,wherein the first wall surface ...

BOND-PAD INTEGRATION SCHEME FOR IMPROVED MOISTURE BARRIER AND ELECTRICAL CONTACT

An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer. 1. An apparatus comprising:first and second electrodes separated by an insulative material;a protective layer over the first and second electrodes, the protective layer having a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode;a first electrical contact at least partially within the first opening and electrically coupled to the first electrode; anda second electrical contact at least partially within the second opening and electrically coupled to the second electrode;wherein each of the first and second electrical contacts comprises a stack of metal layers, the stack of metal layers comprising a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.2. The apparatus of claim 1 , wherein:the apparatus further comprises a lens material forming a lens; andthe insulative material comprises a piezoelectric material configured to change a shape of the lens ...

FABRICATION OF BINARY MASKS WITH ISOLATED FEATURES

An environmentally benign method for producing binary microfabrication masks is disclosed. An optical target may be provided that includes a water-soluble polymer material in contact with an ultraviolet radiation transmittable substrate. A laser may be focused on a primary mask to produce a mask image, the mask image thereafter being reduced by demagnification optics to provide a reduced image. The optical target may be exposed to the reduced image to create features of reduced size from the primary mask. The water-soluble polymer exposed to the ultraviolet radiation may be ablated from the optical target. The optical target may be subsequently metalized using a metal vapor to coat the remaining polymer material and exposed substrate. The metalized optical target may be contacted with an aqueous fluid to remove the metalized polymer material leaving the binary mask. 1. A method of fabricating a laser binary microfabrication mask , the method comprising:providing a radiation transmittable substrate;contacting the substrate with a water-soluble polymer material, thereby forming an optical target;exposing at least a portion of the optical target to a mask image formed by passing radiation through a primary mask, thereby etching at least a portion of the water-soluble polymer material;contacting the optical target with a metal vapor, thereby forming a metalized target comprising at least one metalized substrate portion and at least one metalized polymer material portion; andexposing the metalized target to an aqueous fluid, thereby removing the metalized polymer material portion.2. The method of claim 1 , wherein providing a radiation transmittable substrate comprises providing an ultraviolet radiation transmittable substrate.3. The method of claim 1 , wherein providing a radiation transmittable substrate comprises providing one or more of the following: fused silica claim 1 , calcium fluoride claim 1 , magnesium fluoride claim 1 , and fused quartz.4. The method of ...

LIQUID DISCHARGE HEAD AND METHOD FOR PRODUCING LIQUID DISCHARGE HEAD

A liquid discharge head has a chamber wall member forming a liquid chamber and a discharge head substrate containing a laminate of a base substrate having a surface for an element generating energy for discharging liquid. A first and second layer is formed contacting the wall. The second layer has adhesiveness with the chamber wall member higher than adhesiveness of the first layer, forming the liquid chamber with the chamber wall member. The first layer has a portion exposed from the second layer as viewed from a first direction orthogonal to the surface and contacting the chamber wail member at a position distant from the liquid chamber in a second direction orthogonal to the inner surface of the wall relative to a portion where the wall and second layer contact, and the length in the second direction of the portion of the first layer is 0.3 μm or more. 1. A liquid discharge head comprising:a liquid chamber wall member having a wall forming a liquid chamber storing liquid; anda liquid discharge head substrate containing a laminate of a base substrate having a surface on which an element generating energy for discharging liquid is formed,a first layer, anda second layer disposed on the first layer, contacting the wall, and having adhesiveness with the liquid chamber wail member higher than the adhesiveness of the first layer, andforming the liquid chamber with the liquid chamber wall member, whereinthe first layer has a portion exposed from the second layer as viewed from a first direction orthogonal to the surface and contacting the liquid chamber wall member at a position distant from the liquid chamber in a second direction orthogonal to an inner surface of the wall relative to a portion where the wall and the second layer contact, anda length in the second direction of the portion of the first layer is 0.3 μm or more.2. The liquid discharge head according to claim 1 , wherein the length is 2.0 μm or less.3. The liquid discharge head according to claim 2 , ...

Stencil for Forming Surface Structures by Etching

The invention relates to a stencil for forming surfaces structures by etching, a method for producing a stencil for forming surfaces structures by etching, a printing machine for producing a stencil for forming surface structures by etching, and a method for forming surface structures by etching. A known stencil for forming surface structures by etching includes an etching-resistant stencil layer. The stencil layer can be transferred to the surface to be structured, and the stencil layer can after an etching treatment be partially removed from the surface to be structured, and is elaborated and developed in that the stencil layer includes at least two partial regions and that at least two partial regions can be removed independently of one another from the surface to be structured. 1. A stencil for forming surface structures by etching , with an etch-resistant stencil layer , wherein the stencil layer can be transferred by means of rubbing to the surface to be structured and wherein , after an etching treatment of the surface to be structured , the stencil layer can be at least partially removed , wherein the stencil layer comprises at least two partial regions and the at least two partial regions can be removed independently of one another from the surface to be structured.2. The stencil according to claim 1 , wherein a partial region of the stencil layer comprises a UV-curable ink.3. The stencil according to claim 1 , wherein a partial region of the stencil layer comprises a paste-like ink.4. A method for producing a stencil for forming surface structures by etching claim 1 , wherein an etch-resistant stencil layer is applied by means of a dot matrix printer to a stencil carrier claim 1 , wherein in at least two partial regions of the stencil layer claim 1 , stencil materials that can be removed independently of one another from the surface to be structured are applied by means of a dot matrix printer.5. A printing machine for producing a stencil for forming ...

POSITIONING GRAPHIC COMPONENT FOR SUBSTRATE DETECTION AND METHOD OF MANUFACTURING THE SAME

The present disclosure discloses a positioning graphic component for substrate detection and a method of manufacturing the same. The positioning graphic component for substrate detection comprises at least two layers of metal layer patterns and an insulation layer placed between any two layers of metal layer patterns. The present disclosure solves the problem of the occurrence of an incomplete positioning graphic component due to incomplete coverage by the insulation layer in processing TFT LCDs, thus improving the yield. 1. A positioning graphic component for substrate detection , comprising:at least two layers of metal layer patterns, andan insulation layer placed between any two layers of metal layer patterns.2. The positioning graphic component for substrate detection of claim 1 , further comprising an insulation layer covering an outermost layer of the at least two layers of metal layer patterns.3. The positioning graphic component for substrate detection of claim 1 , wherein the metal layer pattern includes a cross.4. The positioning graphic component for substrate detection of claim 2 , wherein the metal layer pattern includes a cross.5. The positioning graphic component for substrate detection of claim 1 , wherein the at least two layers of metal layer patterns are of the same size.6. A method of manufacturing a positioning graphic component for substrate detection claim 1 , comprising at least the following steps:Step (1): depositing a metal material on a substrate to form a first layer of metal film;Step (2): coating a photoresist material on the first layer of metal film, and transferring a pattern on a mask plate to the photoresist material;Step (3): etching a portion of the first layer of metal film that is not covered by the photoresist material;Step (4): removing the photoresist material to obtain a first layer of metal layer pattern;Step (5): depositing an insulating material on the first layer of metal layer pattern to form a layer of insulating ...

SURFACE CHEMICAL TREATMENT APPARATUS FOR FINE PATTERNING

A surface chemical treatment apparatus provided with: a first conduit having an opening at one end and communicating with a liquid supply means at the other end; a second conduit having at one end an opening that surrounds the opening of the first conduit and communicating with a liquid suction means at the other end; and a moving mechanism for moving the openings of the first and second conduits relative to the solid phase surface, so as to make a surface chemical treatment possible in a fine pattern by allowing the patterning solution to be dispensed through the opening of the first conduit while allowing the solution to be suctioned up together with the surrounding liquid phase or gas phase medium through the opening of the second conduit that surrounds the opening of the first conduit and, thus, preventing seepage of the solution in all directions. 14-. (canceled)5. A surface chemical treatment apparatus for fine patterning , characterized in that the apparatus carries out a chemical treatment in a predetermined pattern on a solid phase surface placed in a gas phase or liquid phase medium , and comprises:a first conduit having an opening at one end and communicating at the other end with a liquid supply section for supplying a patterning solution which reacts with the solid phase surface for a chemical treatment on the surface;a conduit for supplying a sheath liquid through which a sheath liquid is supplied towards said first conduit so that a sheath flow can be created in the first conduit so as to converge the patterning solution to the center;a second conduit having at one end an opening that surrounds the opening of said first conduit and communicating with a liquid suction section at the other end; and a moving mechanism for moving the openings of the first and second conduits relative to the solid phase in a state that these openings face the surface of the solid phase in the gas phase or the liquid phase, whereina chemically treated region in a ...

NANOGAP STRUCTURE HAVING ULTRASMALL VOID BETWEEN METAL CORES AND MOLECULAR SENSING APPARATUS AND METHOD USING THE SAME, AND METHOD FOR PREPARING THE NANOGAP STRUCTURE BY SELECTIVE ETCHING

By forming a monolayer of metal core-shell nanoparticles, transferring the monolayer to various substrates and removing the shells surrounding the particles by way of selective etching, it is possible to form large-area uniform nanogap structures very easily. In addition, a nanogap is formed by an ultrasmall void having no limitation in diffusion between metal cores through Van der Waals interaction between the metal core particles, as the etching proceeds. It is possible to enhance a near-field significantly around the nanogap structure. 1. A nanogap structure comprising an assembly of core particles in which shells are removed ,wherein the assembly has a void formed between metal core particles and a nanogap is provided by the void.2. The nanogap structure according to claim 1 ,wherein the assembly of metal core particles forms a monolayer of metal core particles.3. The nanogap structure according to claim 1 ,wherein Van der Waals force is exerted between metal core particles.4. The nanogap structure according to claim 1 ,wherein the void has a size smaller than a spacing distance by shell.5. The nanogap structure according to claim 1 ,wherein the void is an ultrasmall void having a size of 2 nm or less.6. The nanogap structure according to claim 1 ,wherein the metal core consists of at least one metal selected from the group consisting of Au, Ag, Cu, Pt and Pd.7. The nanogap structure according to claim 6 ,wherein the metal core particles has a diameter of 10-150 nm and the void has a size of 1-2 nm.8. The nanogap structure according to claim 1 ,wherein the nanogap provided by the void shows an additional enhancement factor as compared to the particles before the shells are removed.9. The nanogap structure according to claim 1 ,wherein the nanogap provided by the void shows a near-field enhancement.10. The nanogap structure according to claim 1 ,wherein the nanogap provided by the void shows a free diffusion of molecules without limitation in diffusion of ...

DEVICE EMBEDDED SUBSTRATE AND MANUFACTURING METHOD OF DEVICE EMBEDDED SUBSTRATE

A device embedded substrate includes an insulating layer including an insulating resin material, a device embedded in the insulating layer, a metal film coating at least one face of the device, and a roughened portion formed by roughening at least part of the surface of the metal film. Preferably, the device embedded substrate further includes: a conductive layer pattern-formed on a bottom face, the bottom face being one face of the insulating layer; and a bonding agent made of a material different from the insulating layer and joining the conductive layer () and a mounting face, the mounting face being one face of the device. The metal film is formed only on a face opposite to the mounting face, and the bonding agent has a thickness smaller than a thickness from the metal film to a top face, the top face being the other face of the insulating layer. 1. A device embedded substrate , comprising:an insulating layer including an insulating resin material;an electric or electronic device embedded in the insulating layer;a metal film coating at least one face of the device; anda roughened portion formed by roughening at least part of a surface of the metal film.2. The device embedded substrate according to claim 1 , further comprising:a conductive layer pattern-formed at least on a bottom face, the bottom face being one face of the insulating layer; anda bonding agent made of a material different from the insulating layer and joining the conductive layer and a mounting face, the mounting face being one face of the device, whereinthe metal film is formed only on a face opposite to the mounting face, andthe bonding agent has a thickness smaller than a thickness from the metal film to a top face, the top face being the other face of the insulating layer.3. The device embedded substrate according to claim 2 , wherein the roughened portion is formed on the entire surface of the metal film.4. The device embedded substrate according to claim 2 , further comprising:another ...

SILICON-BASED COMPONENT WITH AT LEAST ONE CHAMFER AND ITS FABRICATION METHOD

The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a “Bosch” etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer. 1. A method for fabricating a micromechanical component made of a silicon-based material comprising the following steps:a) taking a silicon-based substrate;b) forming a mask pierced with holes on a horizontal portion of the substrate;c) etching, in an etching chamber, predetermined oblique walls, in part of the thickness of the substrate, from holes in the mask, in order to form upper chamfered surfaces of the micromechanical component;d) etching, in the etching chamber, substantially vertical walls, in at least part of the thickness of the substrate, from the bottom of the etch made in step c), in order to form peripheral walls of the micromechanical component beneath the upper chamfered surfaces;e) releasing the micromechanical component from the substrate and the mask.2. The method according to claim 1 , wherein step c) is achieved by mixing the etching gas and the passivation gas in the etching chamber in order to form the predetermined oblique walls.3. The method according to claim 2 , wherein claim 2 , in step c) claim 2 , the continuous etching and passivation gas flows are pulsed to enhance the passivation at the bottom level.4. The method according to claim 1 , wherein step d) is achieved by alternating an etching gas flow and a passivation gas flow in the etching chamber in order to form the substantially vertical walls.5. The method according to claim 1 , wherein claim 1 , between step d) and step e) claim 1 , the method further comprises the following steps:f) forming a protective layer on the predetermined oblique walls and the substantially vertical walls, leaving the bottom of the etch made in step d) without any ...

NANOSTRUCTURED LAYER FOR GRADED INDEX FREEFORM OPTICS

The present disclosure relates to a method for creating an optical component having a spatially controlled refractive index. The method may involve applying a thin metal material layer to a substrate. The thin metal material layer may then be heated to create a mask having a spatially varying nano-particle distribution. The substrate may then be etched, using the mask, to imprint a spatially patterned nanostructure pattern on a surface the substrate. 1. A method for creating an optical component having a spatially controlled refractive index , the method comprising:applying a thin metal material layer to a substrate;heating the thin metal material layer to create a mask having a spatially varying nano-particle distribution; andetching the substrate using the mask to imprint a spatially patterned nanostructure pattern on a surface the substrate.2. The method of claim 1 , further comprising removing the mask from the substrate.3. The method of claim 1 , wherein the heating is achieved by de-wetting of the thin metal material layer.4. The method of claim 1 , wherein the de-wetting of the thin metal material layer comprises using a laser to achieve de-wetting of the thin metal layer to form the mask.5. The method of claim 4 , wherein the laser is raster scanned over the mask.6. The method of claim 5 , wherein overlapping raster scanned passes of the laser are used to irradiate the thin metal layer to de-wet the thin metal layer.7. The method of claim 1 , wherein de-wetting the thin metal layer is performed using at least one light emitting diode (LED).8. The method of claim 1 , wherein de-wetting the thin metal layer is performed using thermal processing.9. The method of claim 1 , wherein the etching comprises performing a dry etching process to imprint the spatially patterned nanostructure pattern on the surface.10. The method of claim 9 , wherein the dry etching process comprises a reactive ion etching (RIE) process.11. The method of claim 1 , wherein the etching ...

ACTUATION VIA SURFACE CHEMISTRY INDUCED SURFACE STRESS

A method of controlling macroscopic strain of a porous structure includes contacting a porous structure with a modifying agent which chemically adsorbs to a surface of the porous structure and modifies an existing surface stress of the porous structure. Additional methods and systems are also presented. 1. A method of controlling macroscopic strain of a porous structure , the method comprising:contacting a porous structure with a modifying agent which chemically adsorbs to a surface of the porous structure and modifies an existing surface stress of the porous structure.2. The method of claim 1 , wherein the porous structure comprises at least one metal selected from a group consisting of Group 8 elements claim 1 , Group 9 elements claim 1 , Group 10 elements claim 1 , and Group 11 elements.3. The method of claim 1 , wherein the porous structure is a nanoporous structure comprising gold or platinum.4. The method of claim 1 , wherein the modifying agent is selected from a group consisting of hydrogen claim 1 , a hydrocarbon claim 1 , nitrogen claim 1 , oxygen claim 1 , fluorine claim 1 , sulfur claim 1 , chlorine claim 1 , and bromine.5. The method of claim 1 , wherein the modifying agent is oxygen claim 1 , the modifying agent being contacted with the porous structure by exposure of the porous structure to ozone.6. The method of claim 1 , wherein the porous structure has a ratio of surface atoms to bulk atoms of at least about 1×10.7. The method of claim 1 , wherein a media pore size of the porous structure is less than about 100 nm.8. The method of claim 1 , wherein the porous structure is contacted with the modifying agent for a time sufficient to generate a linear dimensional contraction of the porous metal structure of at least about 0.1%.9. The method of claim 1 , wherein the modifying agent claim 1 , upon chemical adsorption to the porous structure claim 1 , causes an at least partially reversible volumetric change of the porous structure.10. A method of ...

PROJECTED-CAPACITIVE (PCAP) TOUCHSCREEN

Various configurations and arrangements for touchscreens are disclosed to accommodate for one or more optical discontinuities that can be present within these touchscreens. When the one or more optical discontinuities are present, these configurations and arrangements of the touchscreens present a single layer of transparent conductive material that can be difficult to perceive by a human eye when viewing the touchscreens. Additionally, various edge correction techniques are disclosed to adjust mutual capacitances along a perimeter of the touchscreens. These edge correction techniques adjust mutual capacitances such that the values of the mutual capacitances are substantially uniform throughout. 1. A method comprising:providing a first and a second transparent substrate surface;disposing first electrode patterns on the first transparent substrate surface using a fabrication process with an etch resolution, the first electrode patterns comprising: a first electrode pad and a first floating transparent island;disposing second electrode patterns on the second transparent substrate surface using the fabrication process, the second electrode patterns comprising: a second electrode pad and a second floating transparent island,wherein the first floating transparent island is horizontally between the second electrode pad and the second floating transparent island without a horizontal gap with the second electrode pad and the second floating transparent island, and the second floating transparent island is horizontally between the first electrode pad and the first floating transparent island without a horizontal gap with the first electrode pad and the first floating transparent island.2. The method of claim 1 , wherein the fabrication process includes a screen printing process.3. The method of claim 1 , wherein the etch resolution is approximately 200 microns.4. The method of claim 1 , wherein the first and second transparent substrate surfaces comprise opposite surfaces of ...

Method for preparing optically flat damage-free surfaces

A method and apparatus for polishing surfaces so as to provide surfaces which are optically flat and damage free. An etch solution is applied to a rotating surface and the surface to be prepared is caused by hydroplane on the etch solution, the hydroplaning action producing the desired optically flat surface.

Cleaning process and apparatus for silicate materials

A method for treating a surface of a quartz substrate includes preparing a substrate to provide a working surface having an initial roughness; and then ultrasonically acid-etching the working surface to increase the roughness of the working surface by at least about 10%. In one embodiment, the initial surface roughness is greater than about 10 Ra, and in another embodiment the initial surface roughness is greater than about 200 Ra. In a still further embodiment, the initial surface area, if less than about 200 Ra, is increased to greater than about 200 Ra. In other embodiments of the present invention, the working surface roughness is increased by at least about 25% or at least about 50%. Simultaneous with the increase in surface area (as measured by the roughness), the surface defects are reduced to reduce particulate contamination from the substrate.

Device for automatically controlling thickness of pickled-off metal

Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

플라즈마 처리 챔버의 상부 전극의 플라즈마 노출 표면으로부터 블랙 실리콘 또는 블랙 실리콘 카바이드를 제거하는 방법이 제공된다. 상기 방법은 플루오르 함유 가스를 함유하는 가스 조성물을 이용하여 플라즈마를 형성하는 단계, 및 플라즈마를 이용하여 상기 표면으로부터 블랙 실리콘 또는 블랙 실리콘 카바이드를 제거하는 단계를 포함한다. 상기 방법은 또한 상부 전극 이외에 챔버 내의 컴포넌트의 표면으로부터 블랙 실리콘 또는 블랙 실리콘 카바이드를 제거할 수 있다. A method of removing black silicon or black silicon carbide from a plasma exposed surface of an upper electrode of a plasma processing chamber is provided. The method includes forming a plasma using a gas composition containing a fluorine containing gas, and removing black silicon or black silicon carbide from the surface using the plasma. The method may also remove black silicon or black silicon carbide from the surface of the component in the chamber in addition to the top electrode. 플라즈마 처리 챔버, 블랙 실리콘, 플라즈마 노출 표면 Plasma processing chamber, black silicon, plasma exposed surface

Three dimensional nanometer filters and methods of use

Three dimensional nanoparticle filters are provided herein. In one embodiment a filter device includes a base material, alternating layers of sacrificial material between layers of structural material being deposited onto the base material to create a layered base material, and filter sidewalls etched into the deposited alternating layers of the layered base material to remove the layers of sacrificial material between the layers of structural material to form filter slots in the filter sidewalls as well as create channels between the filter sidewalls, where a size of the filter slots is selectable based on a thickness of the layers of sacrificial material utilized.

Cleaning process and apparatus for silicate materials

本发明公开了一种石英衬底的处理方法，该方法包括：制备用于提供具有初始粗糙度的工作表面的衬底；然后超声酸蚀刻该工作表面使其粗糙度增加至少约10％。在本发明的一实施例中，初始表面粗糙度大于约10Ra，以及在另一实施方式中，初始表面粗糙度大于约200Ra。在再一实施例中，如果初始表面区域的粗糙度小于约200Ra，就要增加该区域的粗糙度使其大于约200Ra。在本发明的其它实施例中，工作表面的粗糙度增加至少约25％或者约50％。同时，随着表面区域粗糙度的增加，由于减少衬底上颗粒的污染而减少了表面的缺陷。

Method and device for etching

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Methods and apparatuses for transferring articles through a load lock chamber under vacuum

물품을 진공-보조 처리하기 위한 방법 및 장치에 관한 것으로, 이에 따르면 물품이 스테이징 챔버(15)와 처리 챔버(11) 사이에서 이동하고, 시스템 효율 및 제품 품질을 향상시키기 위해 상기 양 챔버는 실질적으로 동일한 낮은 압력으로 유지되며, 처리 전후에 물품을 위치시키기 위해 자기 결합식 구동 기구(43)가 사용된다. A method and apparatus for vacuum-assisted processing of an article, whereby the article moves between the staging chamber 15 and the processing chamber 11 and both chambers are substantially in order to improve system efficiency and product quality. Maintained at the same low pressure, a magnetically coupled drive mechanism 43 is used to position the article before and after treatment. 챔버, 직선 운반 어레이, 캐리어, 게이트 밸브, 도크 스테이션, 진공 펌프, 레일 가이드, 자동화 수단 Chamber, Straight Line Array, Carrier, Gate Valve, Dock Station, Vacuum Pump, Rail Guide, Automation Means

Chemical etching method for metallic thin film

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Device for checking thickness of etched layer of metal

Methods and apparatuses for transferring articles through a load lock chamber under vacuum

揭示了涉及物件的真空辅助处理的方法和装置，由此在准备腔(15)和处理腔(11)之间引导物件，两个腔都保持基本上相等的低压以提高系统效率和产品质量，其中磁耦合的传动机构(43)被用于在处理之前和之后定位物件。

Improvements to imaging on metal

Surface etching/deposition in semiconductor mfe - by immersion in two component bath of immiscible inert and active liquids

The surface of a body is immersed in an active liquid in contact with a second immiscible liquid of different density but approx. equal surface tension, inert with respect both to the body and to the active liquid, the part of the body immersed varying with time in accordance with a controlled displacement of the body from one liquid to the other.

Surface treatment process for metals, in particular for obtaining surface decorations

PROCESS FOR PRODUCING A METAL WALL SURFACE FOR HEAT TRANSMISSION

PROCEDE DE PRODUCTION D'UNE SURFACE DE PAROI METALLIQUE POUR LA TRANSMISSION DE CHALEUR PENDANT LA VAPORISATION OU LA CONDENSATION DE LIQUIDES OU VAPEURS, DE PREFERENCE DANS DES TUBES ECHANGEURS DE CHALEUR. LA SURFACE DE LA PAROI METALLIQUE 2 USINEE LISSE EST RENDUE RUGUEUSE PAR ATTAQUE CHIMIQUE AFIN DE PRODUIRE DES NOYAUX DE VAPORISATION ET DE CONDENSATION 5, 6. PROCESS FOR THE PRODUCTION OF A METAL WALL SURFACE FOR HEAT TRANSMISSION DURING VAPORIZATION OR CONDENSATION OF LIQUIDS OR VAPORS, PREFERABLY IN HEAT EXCHANGER TUBES. THE SURFACE OF THE SMOOTH FACTORY METAL WALL 2 IS RUGGED BY CHEMICAL ATTACK IN ORDER TO PRODUCE VAPORIZATION AND CONDENSATION CORES 5, 6.

Process of making semiconductors

Method for achieving smooth side walls after Bosch etch process

A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

Laser working method

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Multiple liquid type etching method in gravure engraving

Photoengraver's etching bath

Etching rate determining method and apparatus

에칭액의 에칭능력은 비교적 간단한 배치로 에칭속도를 정밀하게 측정함으로써 파악된다. 에칭액을 에칭액욕으로 부터 반응컬럼으로 도입하고, 에칭될 금속부품과 동일한 재질의 시편을 반응컬럼내의 에칭액으로 실제로 에칭시키고, 시편의 에칭중에 발생된 수소가스를 포집하고, 소정량의 수소가스가 발생될때 까지의 소요시간을 측정하고 측정된 시간으로 부터 에칭속도를 계산함으로써 에칭속도가 측정된다.

Photochemical surface treating apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Electro-chemical process with special product for printing engravings on steel

Production of porous materials

System for monitoring etching rate

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for treatment fluid application and removal

Treated articles such as printed circuit boards that have been etched with an etchant or treated with a solvent, are delivered into a zone of sufficiently high humidity to prevent drying of a liquid treatment fluid on the articles, and wherein the treatment fluid is "blown off" the articles by pressurized air, in the high humidity environment, with the treatment fluid then being delivered for re-use at a prior station. Alternately, the treatment fluid is atomized, entrained in the pressurized air stream and "blown on" the articles, whereby the treatment fluid is efficiently and uniformly applied thereto.

Method of determining the layer removal end-point during layered substrate development or etching, and apparatus for carrying out this process

1. Process for the determination of the end point of layer removal in the developing or etching of layered substrates, especially in the production of microelectronic compontents (chips) by evaluation of the interference pattern generated by beams of monochromatic light reflected from the surface of the layer to be removed and the surface of the substrate, in which the developing or etching is effected by means of an actuator that sprays the developing or etching solution finely over the moving substrate, characterized in that the reflected interference pattern, produced on the moving substrate surface from the measuring beam (10) being, in the area (6) of the spray mist, split and bent into multiple component beams 10a, 10b... 10e) on its way to the substrate (4), and multiple component beams (10ar, 10br... 10er) after reflection from the substrate, is directed to a photo detector of wide surface area, from which impulses are transmitted to an end point determination evaluation unit (17) and a relay for the interruption of the developing or etching process is actuated via a signal line (18).

Different density fluid filled etching tank - with vertically displacable fluid layers

Articles are subjected to chemical removal or etching treatment by being placed into a vessel containing several layers of different specific gravity fluids the vertical position of which in the vessel are being varied. Pref. a neutral fluid layer is provided above and below the etchant column and the height variation of the layers is effected by a U-tube arm with a piston for displacing the liquid in it. Etching of materials with asmophere excluded without manipulation of workpiece to contact it with the various fluids.

Etchant, method of etching, laminate formed thereby, and device

An etchant including a halogenated salt, such as Cryolite (Na 3 AlF 6 ) or potassium tetrafluoro borate (KBF 4 ), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na 3 AlF 6 ), potassium tetrafluoro borate (KBF 4 ), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.

Lead removal method and faucet fitting for plated products made of lead-containing copper alloy having a cylindrical part, and lead leaching prevention method and faucet fitting for lead-containing copper alloy products

Ultrasonic metal finishing

Cleaning process and apparatus for silicate materials

本发明公开了一种石英衬底的处理方法，该方法包括：制备用于提供具有初始粗糙度的工作表面的衬底；然后超声酸蚀刻该工作表面使其粗糙度增加至少约10％。在本发明的一实施例中，初始表面粗糙度大于约10Ra，以及在另一实施方式中，初始表面粗糙度大于约200Ra。在再一实施例中，如果初始表面区域的粗糙度小于约200Ra，就要增加该区域的粗糙度使其大于约200Ra。在本发明的其它实施例中，工作表面的粗糙度增加至少约25％或者约50％。同时，随着表面区域粗糙度的增加，由于减少衬底上颗粒的污染而减少了表面的缺陷。

Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Prevention of lead elution from lead-containing copper alloy materials

Cleaning process and apparatus for silicate materials

결정 기판의 표면을 처리하기 위한 방법은 초기 조도를 갖는 가공면을 제공하기 위해 기판을 준비하는 단계와, 적어도 약 10% 만큼 가공면의 조도를 증가시키기 위해 초음파 산성 에칭하는 단계를 포함한다. 일 실시예에서, 초기 표면 조도는 약 10 Ra를 초과하고, 다른 실시예에서는 초기 표면 조도는 약 200 Ra이다. 또 다른 실시예에서, 초기 표면적은, 약 200 Ra 미만이면, 약 200 Ra를 초과하여 증가된다. 본 발명의 다른 실시예에서, 가공면 조도는 적어도 약 25 % 또는 적어도 약 50 %만큼 증가된다. 표면적의 증가(조도에 의해 측정된 바와 같은)와 동시에, 표면 결함은 기판으로부터 입자 농도를 감소시키도록 감소된다. A method for treating a surface of a crystal substrate includes preparing a substrate to provide a work surface having an initial roughness and ultrasonic acid etching to increase the roughness of the work surface by at least about 10%. In one embodiment, the initial surface roughness is greater than about 10 Ra, and in other embodiments the initial surface roughness is about 200 Ra. In another embodiment, the initial surface area is increased above about 200 Ra, if less than about 200 Ra. In another embodiment of the present invention, the processed surface roughness is increased by at least about 25% or at least about 50%. Simultaneously with the increase in surface area (as measured by the roughness), the surface defects are reduced to reduce the particle concentration from the substrate. 표면 조도, 표면적 증가, 산성 에칭, 그리트, 조면화 Surface roughness, surface area increase, acid etching, grit, roughening

Etching rate determining method and apparatus

The etching ability of an etchant for a metal part is monitored by accurately measuring the etching rate with a relatively simple arrangement. The etching rate is determined by channelling a portion of the etchant from an etching tank (4) to a reaction chamber (1), etching a specimen (8) of the same material as the metal part with the etchant portion in the reaction chamber (1), collecting hydrogen gas generated during etching of the specimen, measuring the time taken until a predetermined quantity of hydrogen gas is generated, and computing the etching rate from the measured time.

Shape deposition manufacturing of microscopic ceramic and metallic parts using silicon molds

Micro-Mold Shape Deposition Manufacturing (μ-Mold SDM) is a method for fabricating complex, three-dimensional microstructures from layered silicon molds. Silicon wafers are etched using conventional silicon-processing techniques to produce wafers with surface patterns, some of which contain through-etched regions. The wafers are then stacked and bonded together to form a mold, which is filled with part material. In one embodiment, the part material is a ceramic or metallic gelcasting slurry that is poured into the mold and solidified to form a part precursor. The mold is removed, and the precursor is sintered to form the final part. The gelcasting material may also be a polymer or magnetic slurry, in which case sintering is not needed. The mold can also be filled by electroplating a metal into it; if necessary, each layer is filled with metal after being bonded to a previously filled layer. Patterned silicon wafer layers may also be combined with macroscopic wax layers formed by Mold SDM to create macroscopic parts with some microscopic parts or features.

Etchant, method of etching, laminate formed thereby, and device

할로겐화 염, 예컨대 크라이올라이트(Na 3 AlF 6 ) 및 칼륨 테트라플루오로 보레이트(KBF 4 )를 포함하는 부식제를 제공한다. 염은 지지체 층을 부식하기 충분한 양으로 부식제에 존재할 수 있고 약 200℃ 초과의 용융 온도를 가질 수 있다. 습식 부식 방법은 부식제를 산화 알루미늄을 포함하는 다층 적층물의 지지체 층의 하나 이상의 표면에 접촉하거나, 또는 크라이올라이트(Na 3 AlF 6 ), 칼륨 테트라플루오로 보레이트(KBF 4 ) 또는 이들 둘다를 포함하는 부식제를 다층 적층물의 지지체 층의 하나 이상의 표면에 접촉시키는 단계; 및 지지체 층의 적어도 일부를 부식시키는 단계를 포함할 수 있다. 방법은 결정을 산화 알루미늄 지지체 층에 성장시켜 제조된 자유기립형(freestanding) 적층물을 제공할 수 있다. 지지체 층의 적어도 일부를 습식 부식에 의해 화학적으로 제거할 수 있다. 전기 장치(100, 200, 300), 광학 장치 또는 적층물(140, 310)을 포함하는 조합 장치.