СПОСОБ ХИМИКО-МЕХАНИЧЕСКОЙ И ЧИСТОВОЙ ОБРАБОТКИ ПОВЕРХНОСТИ (ВАРИАНТЫ)

Изобретение относится к области машиностроения и может быть использовано при чистовой химико-механической обработке деталей. На заготовку наносят активный химический состав, способный вступать в реакцию с заготовкой с образованием на ней конверсионного покрытия, являющегося нерастворимым в активном химическом составе и защищающего заготовку от дальнейшей реакции. Осуществляют контактирование инструмента с заготовкой при относительном их перемещении до достижения желательных характеристик поверхности заготовки. При этом удаляется конверсионное покрытие с заготовки, открываются участки поверхности заготовки для дальнейшей реакции с активным химическим составом и образуется новое конверсионное покрытие. Предусмотрена обработка сопряженных зубчатых колес и обоймы подшипников с элементами качения. В результате повышается точность обработки за счет обеспечения контроля скорости удаления металла с заготовки с высокой точностью. 3 н. и 43 з.п. ф-лы, 2 ил.

СОСТАВ КОМПОЗИЦИИ НА ОСНОВЕ ПАЛЛАДИЯ

Изобретение относится к составам композиций на основе палладия. Композиция на основе палладия содержит следующие компоненты, мас.%: палладий 83,4 - 88,6, никель 10,0 - 15,0, бор 1,4 - 1,6. Технический эффект заключается в том, что данная композиция позволяет защитить металлы и сплавы от разрушения в агрессивных средах при температурах до 950oС. 2 табл.

СОСТАВ И СПОСОБ ВИБРОХИМИЧЕСКОЙ ОБРАБОТКИ ПОВЕРХНОСТИ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ

Изобретение относится к области виброхимической обработки поверхности черных металлов, в частности, виброхимического шлифования и полирования, и может быть использовано при подготовке поверхности изделий из черных металлов к последующему нанесению гальванических покрытий. Состав для виброхимического шлифования и полирования изделий содержит, вес. %: щавелевая кислота 8-40, растворимый неорганический фосфат 6-30, моноэтаноламин 2-20, поверхностноактивное вещество 0,1-2,0 и гранулированный абсорбент диатомовая земля 5-30, причем соотношение щавелевой кислоты и растворимого неорганического фосфата составляет (0,3 - 2,0) : 1. В качестве растворимого неорганического фосфата состав содержит фосфаты, триполифосфаты щелочных металлов или пирофосфат тетранатрия. Способ виброхимического шлифования и полирования изделий включает обработку изделий, помещенных в емкость приведенным составом, который смешивают с водой в соотношении 60 - 90 кг состава на 1 м3 воды и подают в емкость на обрабатываемые ...

СОСТАВ ДЛЯ ВИБРОХИМИЧЕСКОГО ШЛИФОВАНИЯ И ПОЛИРОВАНИЯ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ И СПОСОБ ВИБРОХИМИЧЕСКОГО ШЛИФОВАНИЯ И ПОЛИРОВАНИЯ ИЗДЕЛИЙ ИЗ ЧЕРНЫХ МЕТАЛЛОВ

Использование: виброхимическое шлифование и полирование изделий из черных металлов перед нанесением покрытий. Сущность изобретения: осуществляют обработку изделий полирующим составом, содержащим, мас. % : щавелевая кислота 3 - 20, фосфорная кислота или пирофосфат тетранатрия 10 - 50, гидроокись аммония или фосфат аммония 5 - 28, поверхностно-активное вещество 0,1 - 2,0, суспендирующее вещество - ксантановая смола или водорастворимые полимеры винила марки "Карбопол" 2,0 - 13,0 и вода 30 - 90, причем соотношение щавелевой кислоты и фосфатсодержащего вещества составляет (0,2 - 0,7) : 1. Полирующий состав подают на обрабатываемые изделия в вибрационную полировочную ванну со скоростью 211 г/ч на 1000cм2 поверхности изделий, а pH среды регулируют в пределах от 3,5 до 7,0 добавлением аммонийсодержащего вещества. 1 з. п. ф-лы.

СОСТАВ ПОЛИРУЮЩЕГО ТРАВИТЕЛЯ ДЛЯ ТЕЛЛУРИДА КАДМИЯ-РТУТИ

Изобретение относится к области обработки поверхности теллурида кадмия-ртути химическим полирующим травлением. Состав полирующего травителя для теллурида кадмия-ртути включает компоненты при следующем соотношении, в объемных долях: метанол (95%) - 5, этиленгликоль - 13, бромистоводородная кислота (47%) - 2, перекись водорода (30%) - 1. Предложенный состав обеспечивает полирующее травление со скоростью не более 0,75 мкм/мин и позволяет получить поверхность теллурида кадмия-ртути с минимальной шероховатостью, в среднем не более 2 нм. 4 ил., 1 табл.

Раствор для виброабразивного шлифования

Состав для химико-механической обработки металлических изделий

Раствор для вибрационного снятия заусенцев и притупления острых кромок медных сплавов

РАСТВОР ДЛЯ ВИБРАЦИОННОГО СНЯТИЯ ЗАУСЕНЦЕВ И ПРИТУПЛЕНИЯ ОСТ-РЫХ КРОМОК МЕДНЫХ СПЛАВОВ, содержащий сернокислую медь, хлористую соль и воду, отличающийся тем, что, с целью повьппения скорости обработки и повышения качества поверхности, он дополнительно содержит хлорную известь и натрий 2-этилгексилсульфат (сульфирол-8), а в качестве хлористой соли - хлорид аммония при следующем соотношении Компонентов, мас.%: Сернокислая медь 2-16 Хлорид аммония4-12 Хлорная известь 2-6 Натрий 2-этш1гексилсульфат (сульфирол-8)1,5-2,5 ВодаОстальное ...

Раствор для вибрационной обработки изделий из алюминия и его сплавов

Раствор для химического полирования цветных металлов и сплавов

Паста для химической обработки поверхности металлических изделий

2,4-Диметил-6-/ -1-нафтил/-амино-1,3-диоксан,проявляющий блескообразующее действие при электрохимическом осаждении сплава олово-свинец

Раствор для виброхимической обработки деталей из алюминиевых сплавов

Изобретение относится к химико-механической обработке металлической поверхности . Цель - снижение шероховатости, повышение отражательной способности поверхности и увеличение съема металла. Раствор для виброхимической обработки деталей из алюминиевых сплавов содержит, мас.%: серная кислота 0,2 - 0,5; карбамид 0,06 - 0,15; полиакриламид 0,008 - 0,2; на- трийалкилполиоксиэтиленсульфат 0,04 - 0,1 и вода - до 100, причем соотношение карбамида, натрийалкилполиоксиэтилен- сульфата и полиакриламида равно 1,5:1 :0,2. Достигается цель за счет того, что в качестве минеральной кислоты используют серную кислоту, в качестве органической добавки - карбамид и полиакриламид, а в качестве поверхностно-активного вещества - на- трийалкилполиоксиэтиленсульфат, а также за счет применения этих компонентов в соотношении 1,5 : 1 : 0,2 2 табл. сл с ...

Раствор для химической виброобработки металлических деталей

Изобретение относится к химико-механической обработке металлов, в частности к виброхимическому шлифованию и полированию деталей из латуни и углеродистой стали. Целью изобретения является повышение скорости процесса, снижение шероховатости и увеличение отражательной способности поверхности. Раствор для химической виброобработки деталей из латуни и углеродистой стали содержит, мас.%: серная кислота (уд.в. 1,84 г/см3) 15-25 соляная кислота 7-13 бихромат калия 7-13 2,2-дипиридил 3-5 хинолин 0,02-0,04 ДНС-К 0,02-0,04 пиколинового альдегида 2-гидроксианил 3-5 2-гидрокси-5-этилтиопиколиновой кислоты анилид 3-5 вода остальное. Повышение скорости процесса, снижение шероховатости и увеличение отражательной способности поверхности достигается за счет дополнительного введения пиколинового альдегида 2-гидроксианила и 2-гидрокси-5-этилтиопиколиновой кислоты анилида. 1 табл.

Способ травления стальных изделий

Bäder und Verfahren zum chemischen Polieren von rostfreien Stahloberflächen.

Treatment composition for finishing grinding, and finishing grinding process and abrasive for carrying out the process

The invention relates to an aqueous treatment composition which is intended for finishing grinding and contains a component which gives off oxygen; the proposal of the invention, with the intention of achieving a substance which is particularly effective, is for a further component comprising tannin or comprising saccharides to be present.

CMP SUSPENSION ENTHALTEND EINEN FESTEN KATALYSATOR

Verfahren zur Bildung eines leitfähigen Stopfens in einer Isolierschicht

The production of an oxide coating on a substantially monocrystalline semi-conductorbody

An oxide coating containing doping material is produced on a body of semi-conductor material, such as silicon, by subjecting it to a temperature between 250 DEG C. and 370 DEG C. while exposed to the action of water vapour mixed with a substance which ionizes at that temperature to produce hydrogen and/or alkali ions and also comprises a doping material. After the production of the oxide coating the body is heated to above 1000 DEG C. to cause the doping material to diffuse from the coating into the semi-conductor material. In one example semi-conductor wafers, mounted in a glass rack, are sealed in a glass ampoule with a quantity of boric acid and water and heated at 300 DEG C. for 16 hours. This results in a boron doped oxide coating and subsequent heat treatment at 1280 DEG C. for 16 hours in a current of nitrogen causes the boron to diffuse into the semiconductor material. An aqueous solution of hydrogen peroxide may be used instead of water.

POLISHING SEMI-CONDUCTOR SURFACES

... 1449702 Polishing WACKER-CHEMITRONIC GES FUR ELEKTRONIKGRUNDSTOFFE mbH 4 Feb 1974 [2 Feb 1973] 5122/74 Heading B3D [Also in Division C4] A semi-conductor material, is polished using an agent consisting of a suspension comprising one or more of quartz, a silica, salicie acid, a silicate and a fluosilicate and additionally comprising an amine. The amine may be a primary, secondary, or tertiary amine and the term includes ammonia. Numerous suitable examples are specified. They may be present as the salts and the amounts of amine are preferably 0À3 to 2% by weight. Suitable solvents are also specified. Suitable silicates are those of zirconium, iron, lead, nickel, cobalt, magnesium, calcium, strontium, barium, zinc and aluminium and preferred fluosilicates are those of sodium, potassium, magnesium, calcium, barium, aluminium and zinc. Silica gels and sols may be present. The suspension is generally in water but other solvents may also be used. In an example silicon discs were bedded with wax ...

Process of metal chemical polishing.

USE OF AMMONIUM POLYPHOSPHATE

NICHTABRASIVES MEDIUM WITH ACCELERATED CHEMISTRY

CHEMICAL-MECHANICAL TREATMENT AND SURFACES FINISHING

PROCEDURE AND COMPOSITION FOR POLISHING METAL SURFACES

BATH FOR CHEMICAL POLISHING OF STEEL SURFACES.

DRYING GRANULATES PREPARATION AND PROCEDURE FOR POLISHING EISENHALTIGER COMPONENTS.

STABILIZATION OF WAESSRIGEN LOESUNGEN, THE HYDROGEN PEROXIDE, HYDROGEN FLUORIDE AND METAL IONS CONTAINING.

PROCEDURE AND MEANS FOR THE SIMULTANEOUS GLASS FINISH, CLEANING AND PASSIVATING OF METALLIC WORKPIECES.

HYDROGEN PEROXIDE SOLUTIONS.

SOLUTION, COMPOSITION AND PROCEDURE FOR IMPROVING METAL SURFACES.

REFINEMENT OF A METAL SURFACE USING MEDIA WHICH ARE BASED ON CLOSE ALUMINA.

Chemical mechanical polishing tool, apparatus and method

Slurry for chemical-mechanical polishing copper damascene structures

Agricultural compositions containing surface-active lactams

OVEN CLEANING ARTICLE AND PROCESS

METHOD AND COMPOSITION FOR REFINEMENT OF METAL SURFACES

BRIGHT DIP COMPOSITION FOR TIN/LEAD ALLOY AND METHOD

HEAT TREATABLE COATED ARTICLE WITH CHROMIUM NITRIDE IR REFLECTING LAYER AND METHOD OF MAKING SAME

A coated article is provided so as to include a solar control coating having an infrared (IR) blocking (reflecting and/or absorbing) layer sandwiched between at least a pair of dielectric layers. The IR reflecting layer includes chromium nitride (CrxNy) in certain example embodiments. The use of chromium nitride enables the coated article to have good corrosion resistance to acid(s), good mechanical performance such as scratch resistance, and/or good color stability (i.e., a low .DELTA.E* value(s)) upon heat treatment (HT). The coated article may be heat treated (e.g., thermally tempered) in certain example embodiments of the invention.

ALKALI GEL COMPOSITIONS FOR CLEANING GREASY SURFACES

HEAT-DEPENDENT ALKALI GEL CLEANING COMPOSITIONS AND PROCESS FOR CLEANING GREASY SURFACES Alkaline cleaning compositions are prepared by combining water, alkali metal hydroxide and certain surfactants which composition forms a gel when applied to a hot surface and a process for the easy removal of greasy soil from such surfaces.

Arbeitsstätte mit Arbeitsbehälter und Absaugevorrichtung für schädliche Dämpfe, Staubteile und Gase

Verfahren zum polierenden Abtragen von einkristallinen Halbleiterkörpern, insbesondere Halbleiterscheiben

Verfahren zur Herstellung eines Oxydbelages auf einem vorzugsweise einkristallinen Körper aus Halbleitermaterial

Verfahren zur Herstellung eines Oxydbelages auf einem Körper aus Halbleitermaterial

Verfahren zur Herstellung eines Oxydbelages auf einem Körper aus Halbleitermaterial

Verfahren und Vorrichtung zum Polieren von Silicium-Oberflächen

PROCEDURE FOR THE SURFACE TREATMENT OF COPPER AND COPPER ALLOYS.

CLARIFICATION BATH FOR ELECTROLYTICALLY DEPRESSED CHROME.

РАСТВОР ДЛЯ ХИМИЧЕСКОГО ПОЛИРОВАНИЯ НИОБИЯ

Изобретение относится к химической обработке металлов, в частности к полированию ниобия, и может найти применение в химическом полировании различных частей ускорителей элементарных частиц с целью придания зеркальности их поверхности. Раствор содержит плавиковую, серную, азотную кислоты и воду.

A METHOD FOR THE CHEMICAL TREATMENT OF TITANIUM ARTICLES

Раствор для обработки гальванического медного покрытия

Использование: декорирование товаров народного потребления. Задача: получение раствора, обладающего „мягким" травильным действием для удаления окисной пленки с металлизированной поверхности и обеспечивающего получение равномерного оттенка после электрохимического окрашивания. Сущность изобретения : раствор содержит серную кислоту, соляную кислоту, воду и в качестве добавки дигидрат динатриевой соли этилендиаминтетрауксусной кислоты при следующем соотношении компонентов, г/л: серная кислота – 20-36; соляная кислота – 16-24; дигидрат динатриевой соли этилендиаминтетрауксусной кислоты – 0,5-0,8; вода – до 1,0 л. 1 н.п., 2 табл..

Способ выявления структуры молибдена

Изобретение относится к области металловедения и может быть использовано для выявления структуры металла. Способ выявления структуры молибдена включает анодную обработку молибдена с последующим рассмотрением обработанной поверхности с применением оптического устройства, а выявление структуры осуществляют в течение 10…120 секунд при межэлектродном зазоре 0,1…0,3 мм в проточном электролите на основе NaOH (KOH) при концентрации 50…200 г/л, плотности тока 10…30 А/дм2 при комнатной температуре. П. формулы: 1 Фиг.: 1 ...

High-air-tightness metal resin composite body

Water-soluble metal polishing agent

The invention relates to a water-soluble metal polishing agent which is characterized by comprising the following ingredients in percentage by weight: 5-10% of coconut acid ethanediol amide, 4-8% of alkylphenol polyoxyethylene, 3-6% of ethylenediamine tetraacetic acid disodium salt, 1-3% of sodium butter fatty acid ester, 0.5-1.5% of a surfactant, 0.2-0.6% of a corrosion inhibitor, 0.1-0.3% of an antirust agent and the balance of water. The water-soluble metal polishing agent has the characteristics of wide application range, stable polishing effect, convenience in use, high efficiency and the like.

Surface treatment process of high-strength steel part for large-scale bending machine

Colloidal particles chemically anchored to metal compounds, method for producing the same and use thereof

Full-automatic deep polishing and oxidation coloring surface treatment production equipment for zippers

Composition and slurry used for metal CMP

Process of improvement of the aptitude for shining by oxidation of the objects out of aluminium of the first fusion or its alloys

Silicon polishing solution preparation

METHOD FOR THE PURIFICATION AND RECOVERY OF POLISH RINSING BATHS, AND MEANS FOR CARRYING OUT SAID METHOD

Improvements brought to the surface treatment of articles or objects out of zirconium, titanium and their alloys

Process for the treatment of surface of aluminium and its alloys

SOLUTION ET PROCEDE POUR RENDRE PLUS BRILLANT LE CHROME DEPOSE PAR GALVANOPLASTIE, ET CHROME AINSI OBTENU

Solution pour rendre plus brillant le chrome déposé par galvanoplastie. Elle comprend un composant capable de former des complexes avec l'hydroxyde de chrome et de retirer ces complexes de la surface du chrome déposé Les solutions préférées sont une solution alcaline de ferricyanure, et une solution de dichromate de sodium dans de l'acide sulfurique. Application à l'industrie du chrome.

Process for the chemical shining of aluminium and its alloys

Improvement with the processes for polishing by removal of matter of single-crystal semiconductor bodies, more particularly of pastilles semiconductrices

Bains et procede pour le polissage chimique de surfaces en cuivre ou en alliage de cuivre

Bains pour le polissage chimique de surfaces en cuivre ou alliage de cuivre, comprenant, en solution aqueuse, du peroxyde d'hydrogene, des ions chlorure, de l'acide phosphorique et des ions phosphate et hydrogenophosphate en quantites reglees pour conferer au bain un pH compris entre 1,25 et 3.

Process of polishing and shining of stainless steel surfaces in particular

BATHS AND PROCESS FOR THE CHEMICAL POLISHING OF SURFACES OUT OF STEEL.

CHEMICOMECHANICAL PROCESS OF POLISHING OF METAL SUBSTRATES

Composition abrasive pour le polissage mécano-chimique en une étape de substrats utilisés dans l'industrie microélectronique des semi-conducteurs contenant au moins une couche métallique et une couche d'isolant, comprenant une suspension aqueuse acide de particules de silice colloïdale individualisées, non liées entre elles par des liaisons siloxanes avec un diamètre moyen des particules compris entre 5 et 20 nm et un agent oxydant et procédé de polissage mécano-chimique utilisant une telle composition.

Processes for the treatment of covered metal surfaces of an electrolytic deposit of zinc or similar metal, baths of treatment for the implementation of these processes and metal parts treated in accordance with these processes

Manufactoring process of reflectors out of aluminium

METHOD OF MAKING PERMANENT MAGNET MATERIAL POWDERS

SLURRY FOR CMP OF RUTHENIUM AND POLISHING METHOD USING THE SAME

PURPOSE: A slurry for CMP(Chemical Mechanical Polishing) of ruthenium and a polishing method using the slurry are provided to improve polishing speed under a low pressure and to simplify the polishing processes. CONSTITUTION: After sequentially stacking a first interlayer dielectric(6) and a silicon nitride layer(7) on a semiconductor substrate(1), a contact hole is formed by selectively etching the silicon nitride layer and the interlayer dielectric. After forming a sacrificial layer(11), a ruthenium film(12) used as a lower electrode is formed on the resultant structure. The ruthenium film(12) is then planarized by CMP using ceric ammonium nitrate((NH4)2Ce(NO3)6)as a slurry composition. © KIPO 2003 ...

Chemical mechanical polishing device with ultrasonic slurry supply system

A chemical mechanical polishing device is disclosed herein. The device at least comprises means for fetching a slurry from a storage tank where the slurry will flow into said means; a first conduit for transporting the slurry in which a first end of the conduit is connected to the outlet of said means for fetching the slurry, and the slurry flows from the outlet of said means, through the first end, into the first conduit; an ultrasonic wave generator located on the outside of the pipewall of the first conduit, in which the generator can generate ultrasonic waves which will go through the pipewall and be transmitted to the inside of the first conduit and act on the slurry so that the polishing particles in the slurry will not coagulate thereby improving the quality of polishing; a second conduit connected to the second end of the first conduit, in which the slurry flows from the inside of the first conduit to the inside of the second conduit and is discharged from the outlet of the second ...

METHOD AND COMPOSITION FOR THE REMOVAL OF RESIDUAL MATERIALS DURING SUBSTRATE PLANARIZATION

A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the ...

METHODS FOR PLANARIZATION OF GROUP VIII METAL-CONTAINING SURFACES USING OXIDIZING GASES

A planarization method includes providing a second and/or third Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes an oxidizing gas.

A SILICA AND A SILICA-BASED SLURRY

This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

METHODS FOR WET PROCESSING ELECTRONIC COMPONENTS HAVING COPPER CONTAINING SURFACES

Cette invention concerne des procédés de traitement par voie humide de composants électroniques dont les surfaces contiennent du cuivre. Selon ces procédés, on met en contact les composants électroniques contenant du cuivre avec une solution d'oxydation du cuivre renfermant un agent d'oxydation, puis ensuite avec un bain de morsure. Ces procédés sont notamment utiles dans le nettoyage de composants contenant du cuivre.

Ultrasonic processing of chemical mechanical polishing slurries

The above objects and others are accomplished by a chemical mechanical polishing method and apparatus in accordance with the present invention. The apparatus includes a polishing pad having a polishing surface, and a wafer carrier for supporting a wafer disposed opposite to the polishing pad. The wafer carrier is positionable in a plane that is substantially parallel with the polishing surface, such that a surface of the wafer can be polished by contacting the polishing pad. The polishing surface and the wafer carrier are moved in parallel relative motion to mechanically abrade the wafer surface against the polishing surface in the presence of a polishing slurry. A slurry source containing the polishing slurry is connected to a slurry dispense line to dispense the slurry onto the polishing surface of the polishing pad. An acoustic energy source is positioned relative to transmit acoustic energy into the slurry to break up agglomerated particles in the slurry before the polishing slurry ...

Method of polishing nickel-base alloys and stainless steels

A chemical attack polish and polishing procedure for use on metal surfaces such as nickel base alloys and stainless steels. The chemical attack polish comprises Fe(NO3)3, concentrated CH3 COOH, concentrated H2 SO4 and H2 O. The polishing procedure includes saturating a polishing cloth with the chemical attack polish and submicron abrasive particles and buffing the metal surface.

Baths and process for the chemical polishing of stainless steel surfaces

Baths for the chemical polishing of stainless steel surfaces which comprise a mixture of hydrochloric acid, nitric acid and phosphoric acid, a substituted or unsubstituted hydroxybenzoic acid and an amine in aqueous solution.

Chemical mechanical polishing slurry for metal layers

A slurry for use in chemical-mechanical polishing of a metal layer comprising high purity fine metal oxide particles uniformly dispersed in a stable aqueous medium.

Boron ionization for aluminum oxide etch enhancement

Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY

BARREL POLISHING METHOD APPLIED TOGETHER WITH CHEMICAL POLISHING

PURPOSE: To improve the efficiency and quality of barrel polishing by using a proper amount of persulfate as a compound for the barrel polishing instead of water and a compound conventionally added upon polishing the barrel. CONSTITUTION: A polishing material, persulfate, and water, and a workpiece made of copper or a copper alloy, or a workpiece made of steel are inserted into a polishing tank, for barrel polishing. Sodium persulfate, potassium persulfate, and ammonium persulfate are proper for a chemical polishing agent, and sodium persulfate is most suitable from a viewpoint of a fact that copper ions can be entirely removed by neutralization therefrom without any production of a copper ammonium complex in the case of waste water disposal in industrial mass-production. The concentration of the chemical polishing agent is effective in 4W150g/l, and that other than this range is not practical because the effect of smoothing a workpiece is reduced or its surface is made rough. The surface ...

НЕАБРАЗИВНЫЕ СРЕДЫ С УСКОРЕННЫМИ ХИМИЧЕСКИМИ ПРОЦЕССАМИ

Изобретение относится к полировке поверхностей металлических изделий для косметических целей и/или для целей механического функционирования. Способ чистовой обработки металлического изделия включает в себя стадии помещения металлического изделия в вибрационное устройство для чистовой обработки в сочетании с химическим раствором, способным к взаимодействию с поверхностью металлического изделия с формированием воронения на поверхности металлического изделия, и неабразивной пластиковой средой или неабразивной металлической средой, которая не реагирует с химическим раствором и является способной к суперфинишированию металлического изделия, а также встряхивание металлического изделия, неабразивной пластиковой среды и химического раствора в вибрационном устройстве для чистовой обработки так, чтобы неабразивная пластиковая среда могла удалять воронение с поверхности металлического изделия, тем самым полируя поверхность металлического изделия, непосредственно после чего воронение формируется повторно ...

Водный раствор для химического полирования изделий на основе железа

Раствор для химико-механической обработки металлических изделий

Состав для вибрационной обработкиМЕТАлличЕСКОй пОВЕРХНОСТи

Водный раствор для виброабразивного полирования цветных металлов

Раствор для виброабразивного полирования металлов

РАСТШР ДЛЯ ВИБРОАБРАЗИВНОГО ПОЛИРОВАНИЯ МЕТАЛЛОВ, преимущественно цинка, алюминияf меди и их сплавов, содержаощй лсальцинированную соду, олеиновую кислоту, триэтаноламин, нашатырный спирт, 25%-ный раствор аммиака и воду, отличающийся тем, что. с целью ускорения обработки и по;вышения отражательной способности поверхности, он дополнительно содержит персоль, моноолеат этиленгликоля и полиэтиленгликолевые эфиры, мрноэтаноламидов синтетических жирных кислот (синтамид-5) при следующем соотношений компонентов, мас.%: Кальцинированная . сода0,03-0,04 Олеиновая кислота 1,8-2,0 Триэтаноламин 1,2-1,3 Нашатьфный спирт ...

Polishing fluid and polishing method

Provided is a polishing fluid that has a fast polishing rate, and can selectively suppress polishing of layers including polysilicon or modified polysilicon during the chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the same. A polishing fluid used for the chemical mechanical polishing in which each of the components represented by the following (1) and (2) is included, the pH is 1.5 to 5.0, and a polishing workpiece can be polished in a range of a ratio represented by RR (other)/RR (p-Si) when the polishing rate of the first layer is RR (p-Si), and the polishing rate of the second layer is RR (other) of 1.5 to 200. (1) Colloidal silica particles (2) At least one inorganic phosphate compound selected from phosphoric acid, pyrophosphoric acid, and polyphosphoric acid.

Silicon polishing compositions with high rate and low defectivity

The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.

Cmp polishing liquid and polishing method

The invention relates to a CMP polishing liquid comprising a medium and silica particles as an abrasive grain dispersed into the medium, characterized in that: (A1) the silica particles have a silanol group density of 5.0/nm 2 or less; (B1) a biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm; and (C1) an association degree of the silica particles is 1.1 or more. The invention provides a CMP polishing liquid which has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed, and a polishing method producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

CMP Fluid and Method for Polishing Palladium

The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

Shaped abrasive particles with an opening

An abrasive comprising shaped abrasive particles each with an opening. The shaped abrasive particles are formed from alpha alumina and have a first face and a second face separated by a thickness t. The opening in each of the shaped abrasive particles can improve grinding performance by reducing the size of a resulting wear flat, can provide a reservoir for grinding aid, and can improve adhesion to a backing in a coated abrasive article.

Polishing composition

To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a dishing inhibitor and water. Here, the abrasive grains comprise at least first abrasive grains and second abrasive grains; the ratio of an average primary particle size D L1 of the second abrasive grains to an average primary particle size D S1 of the first abrasive grains, D L1 /D S1 , is 5>D L1 /D S1 >1; the degree of association of the first abrasive grains is from 1.8 to 5; and the degree of association of the second abrasive grains is at most 2.5.

Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate

A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R 8 is independently selected from hydrogen, a saturated or unsaturated C 1-15 alkyl group, C 6-15 aryl group, C 6-15 aralkyl group, C 6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).

Abrasive Particles for Chemical Mechanical Polishing

An abrasive composition for polishing substrates including a plurality of abrasive particles having a poly-dispersed particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span value, by volume, being greater than or equal to about 15 nanometers, wherein the fraction of particles greater than about 100 nanometers is less than or equal to about 20% by volume of the abrasive particles.

Sapphire polishing slurry and sapphire polishing method

Disclosed is a polishing slurry for sapphire polishing that is capable of obtaining polishing speeds and smooth surfaces during the polishing of sapphire substrates that are equivalent to or better than in prior polishing processes even if the number of polishers and polishing hours are reduced. Also disclosed is a sapphire substrate polishing method. The slurry includes alumina abrasives and has a pH adjusted to the range of 10.0 to 14.0, and the sapphire is polished by means of the CMP technique by applying said slurry. The aforementioned alumina abrasives more preferably include at least α-alumina, and the content thereof is more preferably 0.01 to 50 wt %. The mean particle size of the aforementioned alumina abrasives is preferably 0.05 to 10 μm.

POLISHING LIQUID COMPOSITION

A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray (λ=0.154050 nm) irradiation includes a peak (first peak) having a peak top in a diffraction angle 2θ (θ is a Bragg angle) range of 28.61 to 29.67°, a peak (second peak) having a peak top in a diffraction angle 2θ range of 33.14 to 34.53°, a peak (third peak) having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, and a peak (fourth peak) having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°. A half-width of the first peak is 0.8° or less. 1. A polishing method comprising:supplying a polishing liquid composition between an object to be polished and a polishing pad; andpolishing the object to be polished by moving the polishing pad relative to the object to be polished while the object to be polished is in contact with the polishing pad,the polishing liquid composition comprising:composite oxide particles containing cerium and zirconium;a dispersing agent; andan aqueous medium,wherein a powder X-ray diffraction spectrum of the composite oxide particles obtained by CuKα1 ray where λ=0.154050 nm, irradiation includesa first peak having a peak top in a diffraction angle 2θ range of 28.61 to 29.67°, wherein θ is a Bragg angle,a second peak having a peak top in a diffraction angle 2θ range of 33.14 in 34.53°,a third peak having a peak top in a diffraction angle 2θ range of 47.57 to 49.63°, anda fourth peak having a peak top in a diffraction angle 2θ range of 56.45 to 58.91°,wherein a half-width of the first peak is 0.8° or less, and{'sub': 1', '2', '1', '2', '1', '2, 'wherein when there is at least one peak of a peak aderived from a cerium oxide and a peak aderived from a zirconium oxide in the powder X-ray diffraction spectrum, both heights of peak tops of the peaks a, aare 0% of a height of the peak top of the ...

Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same

A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

CERIUM OXIDE SLURRY, CERIUM OXIDE POLISHING SLURRY AND METHOD FOR POLISHING SUBSTRATE USING THE SAME

The present invention provides a cerium oxide slurry, a cerium oxide polishing slurry, and a method of polishing a substrate by using the same, wherein decrease of scratches and polish at high speed can be realized by reducing the content of coarse grains by improving in the disperse state of cerium oxide particles. The invention relates to a cerium oxide slurry containing cerium oxide particles, dispersant and water, in which the ratio of weight of cerium oxide/weight of dispersant is in a range of 20 to 80 and relates a cerium oxide polishing slurry comprising the cerium oxide slurry and additives such as a water-soluble polymer. 18-. (canceled)9. A method of producing a cerium oxide slurry comprisingoxidizing a cerium compound to obtain a cerium oxide,crushing the cerium oxide to obtain a cerium oxide particles,mixing the cerium oxide particles, a dispersant and water, and dispersing the cerium oxide particles in the water to obtain a cerium oxide disperse solution,microparticulating the cerium oxide particles by sedimentation and sorting the cerium oxide disperse solution to take out only the supernatant from the cerium oxide disperse solution,adjusting the solid matter concentration of the microparticulated cerium oxide disperse solution to prepare the cerium oxide slurry,measuring a ratio of weight of cerium oxide/weight of dispersant in the cerium oxide slurry, andadjusting the concentration of the dispersant in the cerium oxide slurry in order to obtain a ratio that settles in a range of 20 to 40,wherein mean size of particle of the cerium oxide particles in the cerium oxide slurry is 1 to 200 nm,wherein a weight of cerium oxide is the weight of the cerium oxide in the cerium oxide slurry, andwherein a weight of dispersant is the weight of the dispersant in the cerium oxide slurry obtained by measuring a concentration of the dispersant in the cerium oxide slurry after the cerium oxide particles are removed.10. The method of producing a cerium oxide slurry ...

METHOD FOR PRODUCING ABRASIVE GRAINS, METHOD FOR PRODUCING SLURRY, AND METHOD FOR PRODUCING POLISHING LIQUID

In the production method for abrasive grains according to the invention, an aqueous solution of a salt of a tetravalent metal element is mixed with an alkali solution, under conditions such that a prescribed parameter is 5.00 or greater, to obtain abrasive grains including a hydroxide of the tetravalent metal element. 115-. (canceled)17. The abrasive grain according to claim 16 , wherein the ΔpH is not greater than 5.00.18. The abrasive grain according to claim 16 , wherein the cycle count N is 1.00 minor greater.19. The abrasive grain according to claim 16 , wherein the substitution count M is not greater than 1.0 min.20. The abrasive grain according to claim 16 , wherein the linear speed u is 5.00 m/min or greater.21. The abrasive grain according to claim 16 , wherein the mixing rate v is not greater than 1.00×10m/min.22. The abrasive grain according to claim 16 , wherein the rotational speed R is 30 minor greater.23. The abrasive grain according to claim 16 , wherein the temperature T is not higher than 60° C.24. The abrasive grain according to claim 16 , wherein a concentration of the salt of a tetravalent metal element in the first liquid is 0.01 mol/L or greater.25. The abrasive grain according to claim 16 , wherein an alkaline concentration of the second liquid is not greater than 15.0 mol/L.26. The abrasive grain according to claim 16 , wherein a pH of the liquid mixture is 2.0 to 7.0.27. The abrasive grain according to claim 16 , wherein the tetravalent metal element is tetravalent cerium.28. A slurry obtained by mixing the abrasive grain according to with water.29. A polishing liquid obtained by mixing the slurry according to with an additive.30. A polishing liquid obtained by mixing the abrasive grain according to claim 16 , an additive and water.3127. A slurry obtained by mixing the abrasive grain according to claim with water.32. A polishing liquid obtained by mixing the slurry according to with an additive.33. A polishing liquid obtained by mixing the ...

Polishing composition and polishing method using same

A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.

AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES

An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices. 115-. (canceled)16. An aqueous polishing composition , comprising:(A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9, as evidenced by the electrophoretic mobility; (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids comprising at least two carbon atoms, a hydroxy group, and a carboxylic acid group in the molecule, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1;', '(b2) esters of the hydroxycarboxylic acids (b1) comprising at least one group selected from the group consisting of lactone groups, esterified hydroxy groups, and esterified carboxylic acid groups, with the proviso that a hydroxy group is present in (b2); and, '(B) at least one water-soluble and water-dispersible hydroxy group comprising component selected from the group consisting of'} (c1) linear and branched alkylene oxide homopolymers and copolymers;', '(c2) linear and branched, aliphatic and cycloaliphatic poly(N- ...

CMP Slurry Composition and Polishing Method Using the Same

A CMP slurry composition includes metal oxide particles, a diisocyanate compound, and deionized water. The CMP slurry composition is capable of selectively controlling polishing speed of a wafer surface having a convex portion and a concave portion, such that primary polishing and secondary polishing can be performed rapidly while stopping polishing of the nitride layer upon the secondary polishing. 1. A CMP slurry composition comprising: metal oxide particles; a diisocyanate compound; and deionized water.2. The CMP slurry composition according to claim 1 , wherein the metal oxide particles are prepared by calcination claim 1 , flame oxidation claim 1 , or thermal synthesis.3. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria (CeO) particles claim 1 , silica (SiO) particles claim 1 , alumina (AlO) particles claim 1 , titania (TiO) particles claim 1 , zirconia (ZrO) particles claim 1 , or a combination thereof.4. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have an average particle diameter of about 70 nm to about 150 nm and a specific surface area of about 10 m/g to about 50 m/g.5. The CMP slurry composition according to claim 1 , wherein the metal oxide particles have a positive zeta potential.6. The CMP slurry composition according to claim 1 , wherein the metal oxide particles comprise ceria particles.7. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a structure that contains a hydrophilic group at a terminal of a hydrophobic diisocyanate repeating moiety.9. The CMP slurry composition according to claim 1 , wherein the diisocyanate compound has a weight average molecular weight of about 100 g/mol to about 100 claim 1 ,000 g/mol.10. The CMP slurry composition according to claim 1 , further comprising: an amphoteric ion compound.11. The CMP slurry composition according to claim 10 , wherein the amphoteric ion compound comprises alanine ...

Method and Composition for Chemical Mechanical Planarization of a Metal

A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

PROCESS FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a process for producing a polishing liquid composition with which it is possible to give a polished work that has a reduced surface roughness and a reduced amount of particles. The process for producing a polishing liquid composition involves a step in which a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1-100 nm is filtered through a filter including a filter aid, the filter aid having an average pore diameter, as measured by the mercury intrusion method, of 0.1-3.5 μm. 1. A process for producing a polishing liquid composition , comprising the step of filtering a raw silica dispersion containing colloidal silica having an average primary-particle diameter of 1 to 100 nm with a filter including a filter aid , wherein the filter aid has an average pore diameter , as measured by a mercury intrusion method , of 0.1 to 3.5 μm.2. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid is diatomaceous earth.3. A process for producing a polishing liquid composition according to claim 1 , wherein an integrated pore volume of 0.5 μm or less of the filter aid claim 1 , as measured by the mercury intrusion method claim 1 , is 2.5 mL/g or more.4. A process for producing a polishing liquid composition according to claim 1 , wherein the filter aid has a BET specific surface area of 4.0 m/g or more and an integrated pore volume of 0.15 μm or less claim 1 , as measured by a nitrogen adsorption method claim 1 , of 0.3 mL/g or more.5. A process for producing a polishing liquid composition according to claim 1 , wherein a water permeability of the filter aid obtained by filtering water with the filter aid under a condition of 0.015 MPa is 5.0×10mor less.6. A process for producing a polishing liquid composition according to claim 1 , comprising the following Steps 1 and 2:{'sup': '4', 'Step 1) filtering a raw silica dispersion containing colloidal silica having an average ...

Chemical mechanical polishing (cmp) composition comprising a specific heteropolyacid

A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c−6y−5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Slurry for planarizing photoresist

A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

POLISHING COMPOSITION

A polishing composition contains colloidal silica. The colloidal silica satisfies the expression A×D×E×F≧350,000 where “A” denotes the average aspect ratio (dimensionless) of the colloidal silica, “D” denotes the average particle diameter (units: nm) of the colloidal silica, “E” denotes the standard deviation of the particle size (units: nm) of the colloidal silica, and “F” denotes the volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica. The volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater. 1. A polishing composition comprising colloidal silica , whereinwhen “A” denotes an average aspect ratio (dimensionless) of the colloidal silica; “D” denotes an average particle diameter (units: nm) of the colloidal silica; “E” denotes a standard deviation of the particle diameter (units: nm) of the colloidal silica; and “F” denotes a volume fraction (units: %) of particles having a diameter of 1 to 300 nm in the colloidal silica, a value obtained by the expression A×D×E×F is 350,000 or greater, andthe volume fraction of particles having a diameter of 1 to 300 nm in the colloidal silica is 90% or greater.2. The polishing composition according to claim 1 , wherein when “B” denotes a standard deviation (dimensionless) of the aspect ratio of the colloidal silica claim 1 , a value obtained by the expression A×B×D×E×F is 30 claim 1 ,000 or greater.3. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of 50 nm or greater and an aspect ratio of 1.2 or greater in the colloidal silica is 50% or greater.4. The polishing composition according to claim 1 , wherein the volume fraction of particles having a diameter of greater than 300 nm in the colloidal silica is less than 2%. The present invention relates to a polishing composition used mainly in polishing an object-to-be-polished, such as semiconductor wafers including silicon wafers, ...

Low free formaldehyde phenolic resins for abrasive products

The present invention provides process for the manufacture of an aqueous resin composition comprising a phenolic formaldehyde (PF) resin, which process comprises the steps of: providing a formaldehyde and phenolic compound, reacting said compounds in a condensation reaction in the presence of a catalyst, after completion of the condensation reaction to react with free formaldehyde, determining the free formaldehyde content of the resin composition, adding a pre-calculated substantially stoichiometric amount of modifying compound containing a primary amine group to reduce the amount of free formaldehyde in the resin composition to less than 0.1 wt % (relative to the total weight of the aqueous resin composition), and optionally distillation of the reaction product.

CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon. 1. A chemical-mechanical polishing composition consisting essentially of:(a) a ceria abrasive,(b) one or more nonionic polymers selected from the group consisting of polyalkylene glycols, polyetheramines, polyethylene oxide/polypropylene oxide copolymers, polyacrylamide, polyvinylpyrrolidone, siloxane polyalkyleneoxide copolymers, hydrophobically modified polyacrylate copolymers, hydrophilic nonionic polymers, polysaccharides, and mixtures thereof,(c) one or more nitrogen-containing zwitterionic compounds,(d) optionally one or more phosphonic acids,(e) optionally one or more sulfonic acid copolymers,(f) optionally one or more anionic copolymers,(g) optionally one or more polymers comprising quaternary amines,(h) optionally one or more compounds that adjust the pH of the polishing composition, and(i) water.2. The polishing composition of claim 1 , wherein the ceria abrasive is a wet-process ceria.3. The polishing composition of claim 2 , wherein the wet process ceria is present in an amount of about 0.1 wt. % to about 10 wt. % of the polishing composition.4. The polishing composition of claim 1 , wherein the one or more nonionic polymers is present in an amount of about 1 ppm to about 3 claim 1 ,000 ppm of the polishing ...

COMPOSITION FOR POLISHING AND METHOD OF POLISHING SEMICONDUCTOR SUBSTRATE USING SAME

Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface. 1. A polishing composition comprising:abrasive grains;at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms;at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts; andwater, whereinthe abrasive grains have an average primary particle diameter of 5 to 50 nm, andthe alcohol compound is contained in the polishing composition in an amount of 0.01 to 1% by mass.2. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of hydroxides of quaternary ammonium claim 1 , carbonates of quaternary ammonium claim 1 , bicarbonates of quaternary ammonium claim 1 , hydroxides of alkali metals claim 1 , carbonates of alkali metals claim 1 , and bicarbonates of alkali metals.3. The polishing composition according to claim 1 , wherein the basic compound is at least one type of compound selected from the group consisting of tetramethylammonium hydroxide claim 1 , tetramethylammonium carbonate claim 1 , tetramethylammonium bicarbonate claim 1 , potassium hydroxide claim 1 , potassium carbonate claim 1 , and potassium bicarbonate.4. The polishing composition according to claim 1 , wherein the abrasive ...

Method of manufacturing semiconductor device

According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

CONTACT RELEASE CAPSULE USEFUL FOR CHEMICAL MECHANICAL PLANARIZATION SLURRY

The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability. 1. A contact release capsule comprising a particle , a chemical payload , and a polymer coating , wherein:the particle comprises a pore or pores which can be impregnated with a chemical payload,the chemical payload remains contained in the particle due to the polymer coating present on the outside surface of the particle,when the particle contacts a surface and a pre-specified shearing force occurs, the polymer coating is removed, and the chemical payload is free to move away from the particle and into the outside environment.2. The contact release capsule of claim 1 , wherein the particle is selected from the group consisting of fumed or colloidal silica claim 1 , fumed or colloidal alumina claim 1 , ceria claim 1 , MnO claim 1 , ZnO claim 1 , TiO claim 1 , any polymer material claim 1 , and/or combinations thereof.3. The contact release capsule of claim 1 , wherein the particle is spherical.4. The contact release capsule of claim 3 , wherein the size of the particle is in the range of about 10 nm to ...

METHOD FOR PRODUCING POLISHING LIQUID COMPOSITION

Provided is a method for producing a polishing composition capable of reducing scratches and particles of an object to be polished, after polishing. It is a method for producing a polishing composition including a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm, wherein the filtration filter includes diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule. 1. A method for producing a polishing composition , the method comprising a step of filtering with a filtration filter a silica particle dispersion containing colloidal silica whose primary particles have an average particle diameter in a range of 1 to 100 nm ,wherein the filtration filter comprises diatomite cationized by use of a polyvalent amine compound having 9 to 200 cationic groups in the molecule.2. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound is polyalkyleneimine.3. The method for producing a polishing composition according to claim 1 , wherein the polyvalent amine compound has a number average molecular weight in a range of 400 to 9000.4. The method for producing a polishing composition according to claim 1 , wherein an average pore diameter of the diatomite obtained by a mercury intrusion method is 0.1 to 3.5 μm.5. The method for producing a polishing composition according to claim 1 , wherein an integrated pore volume of not larger than 0.15 μm of the diatomite obtained by a nitrogen adsorption method is not less than 0.3 mL/g.6. The method for producing a polishing composition according to claim 1 , wherein the diatomite has a BET specific surface area of not less than 4.0 m/g.7. The method for producing a polishing composition according to claim 1 , comprising a step of producing a filtration filter comprising the cationized diatomite.89-. (canceled)10. ...

Combination, Method, and Composition for Chemical Mechanical Planarization of a Tungsten-Containing Substrate

A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

CMP SLURRY REGENERATION APPARATUS AND METHOD

The CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit comprises a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation; a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry ; a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; and a regenerated slurry container for regenerating the small amount metal ion from the rinsed components. 1. A CMP slurry regeneration apparatus for regenerating the CMP slurry used for a CMP process patterning metal conductive elements on a semiconductor circuit , the CMP slurry regeneration apparatus comprising:a. a gravity separator for precipitating solids in a diluted waste slurry used in the CMP process by gravity sedimentation;b. a concentrated slurry container for reserving the solid through the gravity sedimentation in the gravity separator as concentrated slurry;c. a solid-liquid separator for catching components contained in the waste slurry as rinsed components through rinsing the waste slurry by remaining hydroxide corresponding to small amount metal ion while removing soluble and solid components formed by the CMP process; andd. a regenerated slurry container for regenerating the small amount metal ion from the rinsed components.2. The apparatus of claim 1 , wherein the metal conductive elements comprise tungsten.3. The apparatus of claim 1 , wherein the solids comprise the hydroxide of the small amount metal ion.4. The apparatus of claim 1 , wherein the soluble and solid components comprise a tungsten element and an iron element.5. The apparatus of claim 1 , wherein ...

Hollow Polymeric-Alkaline Earth Metal Oxide Composite

The invention provides a plurality of polymeric particles embedded with alkaline-earth metal oxide. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell has an outer surface and a diameter of 5 μm to 200 μm with the outer surface of the shell of the gas-filled polymeric particles having alkaline-earth metal oxide-containing particles embedded in the polymer. The alkaline-earth metal oxide-containing particles have an average particle size of 0.01 to 3 μm distributed within each of the polymeric microelements to coat less than 50 percent of the outer surface of the polymeric microelements.

POLISHING COMPOSITION

Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m/g or less. It is preferable for the aluminum oxide abrasive grains to have an average secondary particle size of 0.1 μm or more and 20 μm or less. The polishing composition is used for polishing hard and brittle materials having a Vickers hardness of 1,500 Hv or higher, such as sapphire, silicon carbide, and gallium nitride. 1. A polishing composition used for polishing a hard and brittle material having a Vickers hardness of 1 ,500 Hv or higher , comprising at least aluminum oxide abrasive grains and water , wherein the polishing composition has a pH of 8.5 or higher , and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.2. The polishing composition according to claim 1 , wherein the aluminum oxide abrasive grains have an average secondary particle size of 0.1 μm or more and 20 μm or less.3. The polishing composition according to claim 1 , wherein the hard and brittle material is sapphire claim 1 , silicon carbide claim 1 , or gallium nitride.4. A polishing method comprising:providing a hard and brittle material; and{'sup': '2', 'polishing the hard and brittle material with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 or higher, and wherein the aluminum oxide abrasive grains have a specific surface area of 20 m/g or less.'}5. A method for producing a polished substrate composed of a hard and brittle material claim 1 , comprising:providing a substrate composed of a hard and brittle material; and{'sup': '2', 'polishing the substrate with a polishing composition, wherein the polishing composition contains at least aluminum oxide abrasive grains and water, wherein the polishing composition has a pH of 8.5 ...

COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM

The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof. 1. An aqueous chemical-mechanical polishing (CMP) composition for polishing a molybdenum-containing substrate , the composition comprising an aqueous carrier having a pH in the range of about 3 to about 6 and containing , at point of use:(a) a particulate abrasive selected from the group consisting of a silica abrasive and an alumina abrasive;(b) a water soluble surface active material; and(c) an oxidizing agent;wherein the surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a nonionic material, or a combination thereof.2. The CMP composition of wherein the particulate abrasive comprises alpha-alumina and the surface active agent is a cationic material.3. The CMP composition of wherein the cationic material is a cationic polymer.4. The CMP composition of wherein the cationic polymer comprises a poly(methacryloxyethyltrimethylammonium) halide.5. The CMP composition of wherein oxidizing agent comprises hydrogen peroxide.6. The CMP ...

Polishing composition, method for fabricating thereof and method of chemical mechanical polishing using the same

Provided are a polishing composition for chemical mechanical polishing, a method of preparing the polishing composition, and a chemical mechanical polishing method using the polishing composition. The polishing composition which is a water-based polishing composition for planarizing a metal compound thin film including two or more metal elements includes nano-diamond particles as a polishing material and poly(sodium 4-styrenesulfonate) as a dispersion stabilizer for the nano-diamond particles in the polishing composition. Since the nano-diamond particles in the polishing composition have hydrophobic surfaces and poly(sodium 4-styrenesulfonate) effectively stabilizes the nano-diamond particles to prevent the nano-diamond particles from aggregating, excellent polishing characteristics for the metal compound thin film may be obtained due to the nano-diamond particles which have a nano size, high hardness, and excellent dispersibility.

POLISHING SLURRY AND POLISHING METHOD THEREOF

The present invention provides a polishing technique capable of polishing, at a high speed, a substrate containing Al and having high hardness, such as single-crystal sapphire substrate, and capable of providing a polished surface of high accuracy. The present invention relates to a polishing slurry for polishing a substrate containing aluminum, comprising abrasive grains, an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g—HO or more, and water. In the present invention, it is preferable that the content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry. 1. A polishing slurry for polishing a substrate containing aluminum , comprising abrasive grains , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more , and water.2. The polishing slurry according to claim 1 , wherein a content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry.3. The polishing slurry according to claim 1 , wherein the aluminum contained in the substrate is aluminum oxide.4. A polishing method claim 1 , comprising polishing a substrate containing aluminum by using a polishing slurry composed of abrasive grains claim 1 , an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g-HO or more claim 1 , and water.5. The polishing slurry according to claim 2 , wherein the aluminum contained in the substrate is aluminum oxide. 1. Field of the InventionThe present invention relates to a polishing slurry containing an inorganic boron compound, and particularly to a polishing slurry suitable for polishing a substrate containing Al.2. Description of the Related ArtIt is known that substrates such as single-crystal sapphire substrates containing aluminum (hereinafter may be referred to as Al) have very high hardness and therefore cannot be polished at high polishing rates (for example, ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O) (OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO—), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium. 1. A chemical-mechanical polishing (CMP) composition comprising(A) inorganic particles, organic particles, or a composite or mixture thereof,(B) a polymeric polyamine or a salt thereof comprising a pendant group (Y) which comprises a moiety (Z),{'sup': 1', '2', '3', '4', '5', '6', '7, 'sub': 3', '3', '3', '3', '2', '2, 'wherein (Z) is a carboxylate (—COOR), sulfonate (—SOR), sulfate (—O—SOR), phosphonate (—P(═O)(OR)(OR)), phosphate (—O—P(═O)(OR)(OR)), carboxylic acid (—COOH), sulfonic acid (—SOH), sulfuric acid (—O—SO), phosphonic acid (—P(═O)(OH)), phosphoric acid (—O—P(═O)(OH)) moiety, or a deprotonated form thereof,'}{'sup': '1', 'Ris alkyl, aryl, alkylaryl, or arylalkyl'}{'sup': '2', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '3', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '4', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '5', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '6', 'Ris alkyl, aryl, alkylaryl, or arylalkyl,'}{'sup': '7', 'Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and'}(C) an aqueous medium.2. The CMP composition of claim 1 , ...

CHEMICAL MECHANICAL POLISHING SLURRY

A chemical mechanical polishing (CMP) slurry used for phase change memory, characterized by comprising polishing particles, oxidizing agents, chelating agents, inhibiting agents, surface active agents, pH adjusting agents/buffering agents and aqueous medium. Compared with the prior art, the present invention provides a chemical mechanical polishing slurry, by which the controllable selectivity of phase change material/bottom dielectric material (1:1 to 180:1) can be achieved and the phase change properties of phase change materials can be maintained after polishing with the polished surface smooth and free from scratch, meeting process requirements of phase change memory. 1. A chemical mechanical polishing slurry used for phase change memory , characterized by comprising polishing particles , oxidizing agents , chelating agents , inhibiting agents , surface active agents , pH adjusting agents/buffering agents and aqueous medium.2. The chemical mechanical polishing slurry according to claim 1 , characterized in that claim 1 , based on the total weight of chemical mechanical polishing slurry claim 1 , the content of said polishing particles is 0.1 wt % to 30 wt % claim 1 , the content of said oxidizing agents is 0.01 wt % to 10 wt % claim 1 , the content of said chelating agents is 0.01 wt % to 5 wt % claim 1 , the content of said inhibiting agents is 0.0001 wt % to 5 wt % claim 1 , and the content of said surface active agents is 0.001 wt % to 2 wt %.3. The chemical mechanical polishing slurry according to claim 2 , characterized in that the content of said polishing particles is 0.5 wt % to 5 wt % claim 2 , the content of said oxidizing agents is 0.1 wt % to 5 wt % claim 2 , the content of said chelating agents is 0.05 wt % to 2 wt % claim 2 , the content of said inhibiting agents is 0.001 wt % to 1 wt % claim 2 , and the content of said surface active agents is 0.001 wt % to 1 wt %.4. The chemical mechanical polishing slurry according to claim 1 , characterized in ...

CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE

A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. 18-. (canceled)9. A chemical mechanical polishing aqueous dispersion comprising:(A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000, a molecule of the first water-soluble polymer comprising a heterocyclic ring;(B) a second water-soluble polymer or a salt of the second water-soluble polymer having a weight average molecular weight of 1000 to 10,000 and comprising one group selected from a carboxyl group and a sulfonic group;(C) an oxidizing agent; and(D) abrasive grains,the chemical mechanical polishing aqueous dispersion having a pH of 7 to 12.10. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a mass ratio (A)/(B) of the first water-soluble polymer (A) and the second water-soluble polymer (B) is 0.02 to 50.11. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the first water-soluble polymer (A) has a viscosity of 50 to 150 mPa·s.12. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein a 5 mass % aqueous solution of the second water-soluble polymer (B) has a viscosity of 1 to 5 mPa·s.13. The chemical mechanical polishing aqueous dispersion as defined in claim 9 ,wherein the first water-soluble polymer (A) is a copolymer having at least one structural unit derived from a compound selected from vinylpyridine, vinylpyrrolidone, and vinylimidazole.14. The chemical mechanical polishing aqueous dispersion as defined in ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND A CARBONATE SALT

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped;a non-ionic surfactant;a carbonate or hydrogen carbonate salt;an alcohol; andan aqueous medium.2. The CMP composition according to claim 1 ,wherein the alcohol is an alcohol having at least two hydroxyl groups which are not dissociable in the aqueous medium.3. The CMP composition according to claim 1 , further comprising:an oxidizing agent.4. The CMP composition according to claim 1 , further comprising:a corrosion inhibitor.5. The CMP composition according to claim 1 , further comprising:a chelating agent.6. The CMP composition according to claim 1 ,wherein the particles are cocoon-shaped silica particles.7. The CMP composition according to claim 1 ,wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.8. The CMP composition according to claim 1 ,wherein the carbonate salt is an alkali carbonate or an alkali hydrogen carbonate.9. The CMP composition according to claim 1 , further comprising:an inorganic or organic acid as chelating agent.10. The CMP composition according to claim 1 , wherein a pH value of the CMP composition is of from 8 to 12.11. The CMP composition according to claim 1 , comprises:cocoon-shaped silica particles;an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group;an alkali carbonate or an alkali hydrogen carbonate;an alcohol having at least two hydroxyl groups which are not dissociable in an aqueous medium;an oxidizing agent;a corrosion inhibitor;a chelating agent; andan aqueous medium.12. A process for manufacturing a semiconductor device claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'chemical mechanical polishing a substrate used in the semiconductor industry in presence of the CMP composition according to ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND AN AROMATIC COMPOUND COMPRISING AT LEAST ONE ACID GROUP

A chemical mechanical polishing (CMP) composition (Q) comprising 1. A chemical mechanical polishing (CMP) composition , comprising:inorganic particles, organic particles, or a mixture or composite thereof,a non-ionic surfactant,an aromatic compound comprising at least one acid group (Y), or a salt thereof, andan aqueous medium,wherein particles are cocoon-shaped.2. The CMP composition according to claim 1 , wherein the aromatic compoundcomprises per aromatic ring at least two acid groups, orcomprises per aromatic ring at least one acid group and at least one further functional group different from the at least one acid group.3. The CMP composition according to claim 1 , wherein the aromatic compound comprises a benzene ring and claim 1 , per benzene ring claim 1 , at least one carboxylic acid group or a deprotonated form thereof.4. The CMP composition according to claim 1 , wherein the aromatic compound is a benzenecarboxylic acid comprising at least two carboxylic acid groups claim 1 , or salts thereof.5. The CMP composition according to claim 1 , wherein the CMP composition further comprises an oxidizing agent.6. The CMP composition according to claim 1 , wherein the CMP composition further comprises an alcohol.7. The CMP composition according to claim 1 , wherein the CMP composition further comprises a corrosion inhibitor.8. The CMP composition according to claim 1 , wherein the particles are silica particles.9. The CMP composition according to claim 1 , wherein the non-ionic surfactant is an amphiphilic non-ionic surfactant comprising a polyoxyalkylene group.10. The CMP composition according to claim 1 , wherein a pH value of the composition is from 8 to 12.11. The CMP composition according to claim 1 , wherein the CMP composition comprisescocoon-shaped silica particles,an amphiphilic non-ionic surfactant containing a polyoxyalkylene group,a benzenecarboxylic acid comprising at least two carboxylic groups (—COOH), or a salt thereof,an alcohol having at least two ...

High Purity Silica Sol and its Production Method

A method for producing a high purity silica sol is provided. This method has enabled use of water glass for the starting material, and the resulting silica sol has a reduced metal impurity Cu and Ni content compared to conventional methods. The method comprises (1) ultrafiltration of an aqueous solution of an alkali silicate; (2) ion exchange process for removal of at least a part of cationic components in the purified aqueous solution of an alkali silicate; (3) another ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and (4) adjustment of a part of the high purity silicate solution (seed solution) to alkaline pH and mixing of this solution with another part of the solution (feed solution) to produce a high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb. 1. A method for producing a high purity silica sol comprising the steps of(1) conducting ultrafiltration of an aqueous solution of an alkali silicate (a) to obtain purified aqueous solution of the alkali silicate (b);(2) subjecting the purified aqueous solution of the alkali silicate (b) to an ion exchange process to remove at least a part of cationic components in the purified aqueous solution of the alkali silicate (b) to obtain purified silicate solution;(3) subjecting the purified silicate solution to an ion exchange process using a chelating ion exchange resin to obtain high purity silicate solution; and(4) adjusting a part of the high purity silicate solution (seed solution) to alkaline pH and mixing this solution with another part of the high purity silicate solution (feed solution) to produce the high purity silica sol having a Cu concentration and a Ni concentration (in relation to the dry silica) of up to 50 ppb.2. A method for producing a high purity silica sol according to further comprising the step of adding an oxidizing agent to at least one member selected from the group consisting of ...

PROCESS FOR PREPARING AQUEOUS COLLOIDAL SILICA SOLS OF HIGH PURITY FROM ALKALI METAL SILICATE SOLUTIONS

The present invention relates to a process for preparing aqueous colloidal silica sols of high purity from silicate solutions, to aqueous colloidal silica sols with a specific profile of impurities, and to the use thereof. The invention further encompasses high-purity aqueous silica obtained as an intermediate in the course of the purification process, high-purity silicon dioxide obtainable by dewatering, and the use thereof. 1. A process for preparing an aqueous colloidal silica sol , the process comprising the following steps:a. Preparing an aqueous solution of a water-soluble alkali metal silicate with a pH of less than 2 by mixing a water-soluble alkali metal silicate or an aqueous alkali metal silicate solution with an acidifier;b. Contacting the acidic alkali metal silicate solution obtained in process step a) with a basic anion exchange resin of the hydroxyl type and an acidic cation exchange resin of the hydrogen type in any sequence, the anion exchange resin and the cation exchange resin being used in spatial separation or in a mixture; andc. Forming a stable colloidal silica sol by establishing a temperature, concentration and pH suitable for nucleation and particle growth in the aqueous silica solution obtained from step b).2. The process for preparing an aqueous colloidal silica sol according to claim 1 , wherein the acidic alkali metal silicate solution prepared in step a) claim 1 , in an additional process step claim 1 , a1) claim 1 , before performance of step b) claim 1 , is contacted with a resin containing chelate-forming functional groups with binding affinity to divalent or higher-valency metal ions.3. The process for preparing an aqueous colloidal silica sol according to claim 1 , wherein the acidic alkali metal silicate solution obtained from process step a) is aged at a temperature in the range from 10 to 100° C. for a period of 0 to 48 h.4. The process for preparing an aqueous colloidal silica sol according to claim 2 , wherein the resin used ...

CMP POLISHING FLUID, METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING COMPOSITE PARTICLE, AND METHOD FOR POLISHING BASE MATERIAL

A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5. 1. A CMP polishing liquid comprising:water; andan abrasive particle, whereinthe abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core,the first particle contains silica,the second particle contains cerium hydroxide, andpH of the CMP polishing liquid is equal to or lower than 9.5.2. The CMP polishing liquid according to used for polishing a surface to be polished that contains silicon oxide.3. A method for polishing a base material claim 1 , comprising a step of polishing a surface to be polished of a base material by using the CMP polishing liquid according to .4. A method for manufacturing a CMP polishing liquid containing water and an abrasive particle claim 1 , the method comprisinga step of, in an aqueous solution that contains a first particle containing silica, a first component containing a precursor of cerium hydroxide, and a second component that is capable of reacting with the precursor to precipitate a second particle containing cerium hydroxide, precipitating the second particle by reacting the precursor and the second component to obtain a composite particle having a core including the first particle, and the second particle provided on the core, whereinthe abrasive particle comprises the composite particle, and pH of the CMP polishing liquid is equal to or lower than 9.5.5. The method for manufacturing a CMP polishing liquid according to claim 4 , wherein the composite particle is obtained by mixing a liquid containing the first particle and the first component with a liquid containing the second component.6. The ...

POLISHING AGENT AND POLISHING METHOD

A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20. 1. A polishing agent for chemically and mechanically polishing a non-oxide single-crystal substrate , the polishing agent comprising:an oxidant having redox potential of 0.5 V or more and containing a transition metal;silicon oxide particles and cerium oxide particles; anda dispersion medium,wherein a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.2. The polishing agent according to claim 1 ,wherein the oxidant is permanganate ion.3. The polishing agent according to claim 2 ,wherein a content of permanganate ion is 0.015 mass % or more and 5 mass % or less.4. The polishing agent according to claim 1 ,wherein a content of the cerium oxide particles is 0.05 mass % or more and 15 mass % or less.5. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the cerium oxide particles is 0.5 μm or less.6. The polishing agent according to claim 1 ,wherein an average secondary particle diameter of the silicon oxide particles is 0.5 μm or less.7. The polishing agent according to claim 1 ,wherein the silicon oxide particle is colloidal silica.8. The polishing agent according to claim 1 ,wherein pH is 11 or less.9. The polishing agent according to claim 8 ,wherein pH is 5 or less.10. The polishing agent according to claim 1 ,wherein the non-oxide single-crystal substrate is a silicon carbide (SiC) single-crystal substrate or a gallium nitride (GaN) single-crystal substrate.11. A polishing method comprising:{'claim-ref': {'@idref': ' ...

Polishing composition

A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm 2 of surface area of the abrasive grains. Examples of this water-soluble polymer include nonionic compounds having a polyoxyalkylene chain.

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

A method for fabricating a semiconductor device, wherein the method comprises steps as follows: A dummy gate with a poly-silicon gate electrode and a passive device having a poly-silicon element layer are firstly provided. A hard mask layer is then formed on the dummy gate and the passive device. Next, a first etching process is performed to remove a portion of the hard mask layer to expose a portion of the poly-silicon element layer. Subsequently, an inner layer dielectric (ILD) is formed on the dummy gate and the poly-silicon element layer, and the ILD is flattened by using the hard mask layer as a polishing stop layer. Thereafter, a second etching process is performed to remove the poly-silicon gate electrode, and a metal gate electrode is formed on the location where the poly-silicon gate electrode was initially disposed. 1. A method for fabricating a semiconductor device comprising:providing a dummy gate with a poly-silicon gate electrode and a passive device having a poly-silicon element layer;forming a hard mask layer on the dummy gate and the passive device;performing a first etching process to remove a portion of the hard mask layer to expose a portion of the poly-silicon element layer;forming an inner layer dielectric (ILD) on the dummy gate and the poly-silicon element layer;flattening the ILD by using the hard mask layer as a polish stop layer;performing a second etching process to remove the poly-silicon gate electrode; andforming a metal gate electrode on the location where the poly-silicon gate electrode was initially disposed.2. The method for fabricating the semiconductor device according to claim 1 , wherein the first etching process further removes a portion of the poly-silicon element layer claim 1 , whereby a recess is formed in the passive device to expose the remaining poly-silicon element layer.3. The method for fabricating the semiconductor device according to claim 1 , wherein the formation of the dummy gate and the passive device comprises ...

POLISHING LIQUID COMPOSITION FOR SILICON OXIDE FILM

Provided is a polishing liquid composition that is able to improve the polishing rate of a silicon oxide film in one aspect. 1. A polishing liquid composition for a silicon oxide film comprising:cerium oxide particles (component A);an additive (component B); andan aqueous medium,wherein the component B is a compound having a reduction potential of 0.45 V or more when a 10 ppm aqueous solution of the component B is measured by cyclic voltammetry (with an Ag/AgCl electrode as a reference).2. The polishing liquid composition according to claim 1 , wherein an oxidation potential of the component B is not detected when a 10 ppm aqueous solution of the component B is measured by cyclic voltammetry (with an Ag/AgCl electrode as a reference).3. The polishing liquid composition according to claim 1 , wherein the component B is a reducing compound containing a heteroaromatic ring skeleton.4. The polishing liquid composition according to claim 1 , wherein the component B is an N-oxide compound containing a nitrogen-containing heteroaromatic ring skeleton in which at least one hydrogen atom is substituted with a hydroxyl group claim 1 , or a salt of the N-oxide compound (component B1).5. The polishing liquid composition according to claim 4 , wherein the component B1 is at least one selected from an N-oxide compound having a pyridine ring in which at least one hydrogen atom is substituted with a hydroxyl group claim 4 , an N-oxide compound having a quinoline ring in which at least one hydrogen atom is substituted with a hydroxyl group claim 4 , or salts of these N-oxide compounds.6. The polishing liquid composition according to claim 1 , wherein the component B is an N-oxide compound containing a nitrogen-containing heteroaromatic ring skeleton in which at least one hydrogen atom is substituted with a thiol group claim 1 , or a salt of the N-oxide compound (component B2).7. The polishing liquid composition according to claim 6 , wherein the component B2 is at least one selected ...

POLISHING COMPOSITION

Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate. 1. A polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane , the polishing composition comprising:colloidal silica particles and water,{'sup': '2', 'wherein a value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less.'}2. The polishing composition according to claim 1 , wherein the value obtained by dividing a specific surface area (unit: m/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles claim 1 , that is claim 1 , (specific surface area/number average particle diameter) is 0.5 or more and 2.0 or less.3. The polishing composition according to claim 1 , wherein claim 1 , when a particle size at a 3% accumulation point from smaller particle size is denoted as Dand a particle size at a 97% accumulation point from smaller particle size is denoted as Din a cumulative number distribution of the colloidal silica particles claim 1 , a value obtained by dividing Dby D claim 1 , that is claim 1 , (D/D) is 2.0 or more.4. The polishing composition according to claim 1 , wherein an aspect ratio of the colloidal silica particles is 1.10 or more.5. The polishing composition according to claim 1 , wherein a pH value is 5 or more and 11 or less.6. A polishing method of polishing a sapphire substrate having a non-polar plane or a semi-polar plane by using the polishing composition according to .7. A method for manufacturing a sapphire substrate claim 6 , the method comprising a step of performing polishing by the polishing method according to . The present invention relates to a ...

ABRASIVE PARTICLES, POLISHING SLURRY AND METHOD OF FABRICATING ABRASIVE PARTICLES

The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and_forming a precipitate, and washing abrasive particles synthesized by precipitation. 1. A method of fabricating abrasive particles , the method comprising:preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor;preparing a basic solution;mixing the basic solution with the precursor solution and forming a precipitate; andwashing abrasive particles synthesized by precipitation.2. The method of claim 1 , wherein the first precursor comprises an organic salt containing a cerium (III) claim 1 , and the second precursor comprises an inorganic salt containing the cerium (III).3. The method of claim 2 , wherein the second precursor comprises a halogen group element.4. The method of claim 1 , wherein preparing the precursor solution comprises:mixing the first precursor with water to prepare a first precursor solution;mixing the second precursor with water to prepare a second precursor solution; andmixing the first precursor solution with the second precursor solution.5. The method of claim 4 , wherein the first precursor solution is a solution having a pH value lower than that of the second precursor solution.6. The method of claim 4 , wherein preparing the precursor solution further comprises adding an acidic material to the second precursor solution prior to mixing the first precursor solution with the second precursor solution.7. The method of claim 4 , wherein mixing the first precursor solution with the second precursor solution ...

Additives for Barrier Chemical Mechanical Planarization

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition. 2. The polishing composition of claim 1 , wherein the inorganic silicate is a salt of silicic acid selected from the group consisting of potassium silicate claim 1 , ammonium silicate claim 1 , tetramethylammonium silicate claim 1 , tetrabutylammonium silicate claim 1 , tetraethylammonium silicate claim 1 , and combinations thereof.3. The polishing composition of claim 2 , wherein the inorganic silicate is present in an amount of from about 0.2 wt. % to about 2 wt. %.4. The polishing composition of claim 1 , wherein the high molecular weight polymer is present in an amount of from about 0.01 wt. % to about 1.0 wt. %.5. The polishing composition of claim 4 , wherein the high molecular weight polymer is present in an amount of from about 0.1 wt. % to about 0.5 wt. %.6. The polishing composition of claim 1 , wherein the abrasive is selected from the group consisting of high purity colloidal silica claim 1 , alumina claim 1 , ceria claim 1 , germania claim 1 , silica claim 1 , titania claim 1 , zirconia claim 1 , alumina dopes colloidal silica in lattices claim 1 , and mixtures thereof.7. The polishing composition of claim 1 , wherein the abrasive is present in an amount of from about 3 wt. % to about 15 wt. %.8. The polishing composition of claim 7 , wherein the abrasives is colloidal silica and the colloidal silica has a mean particle size of between 30 nm and 300 nm.9. The polishing composition of claim 8 , wherein the colloidal silica has a mean particle size of between 50 nm and 200 nm.10. The polishing composition of claim 9 , wherein the colloidal silica has a mean particle size of between 60 nm and 150 nm.11. ...

POLISHING SLURRY COMPOSTION

Provided is a polishing slurry composition including colloidal silica abrasive particles, a metal oxide monomolecular complexing agent, an oxidizer, and a pH adjusting agent, a water-soluble polymer, or both. 1. A polishing slurry composition , comprising:colloidal silica abrasive particles;a metal oxide monomolecular complexing agent;an oxidizer; anda pH adjusting agent, a water-soluble polymer, or both.2. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles are included in the slurry composition in an amount of 0.0001 parts by weight to 20 parts by weight.3. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles include particles with a single size of 10 nm to 300 nm or mixed particles with at least two different sizes of 10 nm to 300 nm.4. The polishing slurry composition of claim 1 , wherein the colloidal silica abrasive particles include particles with a first size of 10 nm to 150 nm and a second size of 150 nm to 300 nm.5. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent is included in the slurry composition in an amount of 0.00001 parts by weight to 10 parts by weight.6. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent is an acidic compound having 2 to 5 carbon atoms claim 1 , and includes at least one functional group selected from the group consisting of a hydroxyl group (—OH) claim 1 , a carbonyl group (C═O) claim 1 , and carboxylic acid (—COOH) claim 1 ,wherein the number of each of the at least one functional group is greater than or equal to 2.7. The polishing slurry composition of claim 1 , wherein the metal oxide monomolecular complexing agent includes at least one selected from the group consisting of glyoxylic acid claim 1 , citric acid claim 1 , malic acid claim 1 , maleic acid claim 1 , malonic acid claim 1 , oxalic acid claim 1 , succinic acid claim 1 , lactic acid ...

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives. 2. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles range from 0.05 wt. % to 10 wt. % and have mean particle size ranging from 5 nm to 500 nm;the chemical additive ranges from 0.01 wt. % to 20.0% wt. % and has at least fix hydroxyl functional groups in its molecular structure; andthe composition has a pH of 3 to 10.3. The Chemical Mechanical Polishing (CMP) composition of claim 2 , wherein abrasive particles have changes of mean particle size MPS (nm) and D99 (nm)≤5.0% over shelf time of ≥30 days at a temperature ranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % of the particles fall on and under.4. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles having mean particle size ranging from 5 nm to 500 nm claim 1 , and have a concentration from 0.05 wt. % to 10 wt. %;the chemical additive has R1, R2, R3, R4 and R5 (Rs in group R1 to R5) selected from (1), and ranges from 0.05 wt. % to 5 wt. %;the composition has a pH of 3 to 10; andthe abrasive particles have changes of mean particle size MPS (nm) and D99 (nm)≤3.0% over shelf time of ≥30 days at a temperature ranging from 20 to 60° C.; wherein D99 (nm) is a particle size that 99 wt. % of the particles fall on and under.6. The Chemical Mechanical Polishing (CMP) composition of claim 1 , wherein the abrasive particles having mean particle size ranging from 5 nm to 500 nm claim 1 , and have a ...

CALCIUM CARBONATE SLURRY

A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %. 122-. (canceled)23. A composition comprising:a calcium carbonate slurry comprising a plurality of calcium carbonate particles suspended in a solution, wherein the solution comprises a dispersant and an anionic surfactant, wherein a concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.24. The composition of claim 23 , wherein one or both of the dispersant and the anionic surfactant reduce a zeta potential of the slurry.25. The composition of claim 23 , wherein a zeta potential of the slurry is equal to or less than about −50 mV.26. The composition of claim 23 , wherein the dispersant includes sodium polyacrylate claim 23 , sodium n-silicate claim 23 , sodium tetrapyrophosphate claim 23 , sodium hexametaphosphate claim 23 , sodium polyalluminate claim 23 , sodium tetraborate claim 23 , sodium triphosphate claim 23 , sodium citrate claim 23 , or combinations thereof.27. The composition of claim 23 , wherein the anionic surfactant includes sodium dodecyl sulfate (SDS) claim 23 , polysorbate claim 23 , octylphenol ethoxylate claim 23 , or combinations thereof.28. The composition of claim 23 , wherein a pH of the slurry is between about 8.5 and about 10.5.29. The composition of claim 23 , wherein an average diameter of the plurality of calcium carbonate particles is between about 10 nm and about 3μm.30. The composition of claim 23 , wherein less than about 5% of a total number of the calcium carbonate particles has a diameter greater than about 4 μm.31. The composition of claim 23 , wherein a concentration of the dispersant is between ...

Low Oxide Trench Dishing Chemical Mechanical Polishing

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Polishing compositions for reduced defectivity and methods of using the same

Chemical mechanical polishing compositions include an abrasive, a first removal rate enhancer; and water; wherein the polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

CHEMICAL MECHANICAL POLISHING METHOD FOR TUNGSTEN

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; nonionic polyacrylamide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive having a negative zeta potential; and, optionally, a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten is inhibited as well as erosion of dielectrics underlying the tungsten. 18-. (canceled)9. A composition for chemical mechanical polishing tungsten consisting of , as initial components: an oxidizing agent;', 'nonionic polyacrylamide', 'a colloidal silica abrasive having a negative zeta potential;', 'a dicarboxylic acid, salt thereof or mixtures thereof,', 'a source of iron (III) ions; and,', 'optionally, a pH adjusting agent., 'water;'}10. The composition of claim 9 , wherein the chemical mechanical polishing composition for tungsten consists of claim 9 , as initial components:the water;0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;20 to 320 ppm of the nonionic polyacrylamide;0.01 to 10 wt % of the colloidal silica abrasive having a negative zeta potential;100 to 1,400 ppm of the dicarboxylic acid, salt thereof or mixtures thereof, wherein the dicarboxylic acid, salt thereof or mixtures thereof is malonic acid, salt thereof or mixtures thereof;100 to 1,000 ppm of the source of iron (III) ions, wherein the source of iron (III) ...

DISPERSION LIQUID OF SILICA PARTICLES, POLISHING COMPOSITION, AND METHOD FOR PRODUCING DISPERSION LIQUID OF SILICA PARTICLES

A polishing composition that can not only achieve high polishing speed, but also can improve the surface smoothness (surface quality) of a polished substrate and reduce defects is provided. That is, provided is a polishing composition comprising silica particles and a water soluble polymer, wherein the contained silica particles satisfy the following requirements (a) to (c): (a) the primary particle diameter based on the specific surface area is 5 to 300 nm; (b) the coefficient of variation in the particle diameter is 10% or less; and (c) the Sears number Y is 10.0 to 12.0. 1. A dispersion liquid of silica particles , containing silica particles satisfying the following requirements (a) to (c):(a) a primary particle diameter calculated based on a specific surface area determined by a BET method using nitrogen adsorption is 5 to 300 nm;(b) a coefficient of variation in a particle diameter is 10% or less; and(c) a Sears number Y is 10.0 to 12.0.2. The dispersion liquid of silica particles according to claim 1 , wherein the silica particles have a Sears number y calculated for one particle in a range of (2.92×10×d−7.10×10)≤y≤(2.92×10×d−6.10×10){'sup': '2', '(wherein d is a primary particle diameter [nm] calculated based on a specific surface area (SA [m/g]) determined by a BET method using nitrogen adsorption).'}3. The dispersion liquid of silica particles according to claim 1 , wherein the silica particles have a density by a pycnometer method of 1.80 g/cmor more.4. A polishing composition comprising silica particles and a water soluble polymer claim 1 , wherein the silica particles satisfy the following requirements (a) to (c):(a) a primary particle diameter calculated based on a specific surface area determined by a BET method using nitrogen adsorption is 5 to 300 nm;(b) a coefficient of variation in a particle diameter is 10% or less; and(c) a Sears number Y is 10.0 to 12.0.5. The polishing composition according to claim 4 , wherein the water soluble polymer is ...

CHEMICAL MECHANICAL POLISHING AUTOMATED RECIPE GENERATION

A method for polishing dies locations on a substrate with a polishing module. A thickness at selected locations on the substrate is premeasured at a metrology station, each location corresponding to a location of a single die. The thickness obtained by the metrology station for the selected locations of the substrate is provided to a controller of a polishing module. The thickness corrections for each selected location on the substrate are determined. A polishing step in a polishing recipe is formed from the thickness correction for each selected location. A polishing parameter for each die location is calculated for the recipe. 1. A method of polishing a substrate , comprising:premeasuring thickness at selected locations on the substrate at a metrology station, each location corresponding to a location of a single die;providing the thicknesses obtained using the metrology station for the selected locations of the substrate to a controller of a polishing module;determining thickness corrections for each selected location on the substrate;forming a step in a polishing recipe from the thickness corrections for each selected location; andcalculating a polishing parameter for each selected location.2. The method of claim 1 , further comprising:polishing each die location with a respective step in the polishing recipe associated with that die location.3. The method of claim 2 , further comprising:polishing a second die location on the substrate with a second step.4. The method of claim 1 , wherein the calculating the polishing time comprises:comparing the die corrections to a removal rate curve to determine the polishing parameter inclusive of one or more of polishing time, polishing pressure, and oscillation speed.5. The method of further comprising:measuring the substrate at a metrology station post polishing; andadjusting the removal rate curve to reflect the post polishing measurement and the polishing time used to polish the die location.6. The method of claim 4 , ...

SURFACE TREATMENT COMPOSITION, METHOD FOR PRODUCING SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

The present invention provides a composition for surface treatment that sufficiently removes the defect present on the surface of a polished object to be polished. The composition for surface treatment that includes a silicone-based compound having an HLB of more than 7 and water and is used to treat a polished object to be polished. 1. A composition for surface treatment comprising: a silicone-based compound having an HLB of more than 7; and water , the composition used to treat a polished object to be polished.2. The composition for surface treatment according to claim 1 , further comprising a dispersant.3. The composition for surface treatment according to claim 2 , wherein the dispersant is a polymer.4. The composition for surface treatment according to claim 1 , the composition containing substantially no abrasive grain.5. The composition for surface treatment according to claim 1 , wherein the polished object to be polished contains polysilicon or silicon oxide.6. A method for manufacturing the composition for surface treatment according to claim 1 , the method comprising mixing a silicone-based compound having an HLB of more than 7 and water.7. A method for surface treatment claim 1 , the method comprising treating a surface of a polished object to be polished using the composition for surface treatment according to .8. The method for surface treatment according to claim 7 , wherein the surface treatment is performed by a rinse polishing treatment or a cleaning treatment.9. A method for manufacturing a semiconductor substrate claim 7 , the method comprising treating a surface of a polished object to be polished by the method for surface treatment according to claim 7 ,wherein the polished object to be polished is a polished semiconductor substrate. The present invention relates to a composition for surface treatment, a method for manufacturing the composition for surface treatment, a method for surface treatment, and a method for manufacturing a semiconductor ...

METAL CAPPING LAYER AND METHODS THEREOF

A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process. 1. A method of fabricating a semiconductor device , comprising:forming a metal layer over a substrate;depositing a capping layer over the metal layer;selectively forming a self-assembled monolayer (SAM) over the capping layer; andafter selectively forming the SAM over the capping layer, performing a thermal process to the semiconductor device, wherein the SAM prevents diffusion of the capping layer during the thermal process.2. The method of claim 1 , wherein the metal layer is part of a multi-level metal interconnect network.3. The method of claim 2 , wherein the metal layer includes a metal line or a metal via of the multi-level metal interconnect network.4. The method of claim 1 , further comprising:forming the metal layer within a low-K dielectric layer.5. The method of claim 1 , further comprising:prior to forming the metal layer, forming a barrier layer over the substrate; andforming the metal layer over the barrier layer.6. The method of claim 1 , wherein the capping layer includes a Co layer.7. The method of claim 1 , wherein the SAM is selectively formed over the capping layer by a vapor ...

VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF TOP SOURCE OR DRAIN JUNCTIONS

Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a channel fin over a substrate and forming a top spacer region around a top portion of the channel fin, wherein the top spacer region includes a dopant. A dopant drive-in process is applied, wherein the dopant drive-in process is configured to drive the dopant from the top spacer region into the top portion of the channel fin to create a doped top portion of the channel fin and a top junction between the doped top portion of the channel fin and a main body portion of the channel fin. 1. A method of forming a semiconductor device , the method comprising:forming a channel fin over a substrate;forming a top spacer region around a top portion of the channel fin, wherein the top spacer region comprises a dopant; andapplying a dopant drive-in process, wherein the dopant drive-in process is configured to drive the dopant from the top spacer region into the top portion of the channel fin to create a doped top portion of the channel fin and a top junction between the doped top portion of the channel fin and a main body portion of the channel fin.2. The method of further comprising forming a gate structure across from the substrate and around the channel fin.3. The method of claim 2 , wherein the gate structure laterally overlaps the top junction.4. The method of claim 1 , wherein the top spacer comprises a low-k dielectric material.5. The method of wherein the location of the top junction is controlled based at least in part on a thickness dimension of the top spacer region.6. The method of wherein the location of the top junction is controlled based at least in part on a temperature of the dopant drive-in process.7. The method of wherein the location of the top junction is controlled based at least in part on a duration of the dopant drive-in process.8. The method of claim 1 , wherein claim 1 , subsequent to the dopant drive-in ...

Asymmetric Source and Drain Structures in Semiconductor Devices

The present disclosure provides semiconductor devices with asymmetric source/drain structures. In one example, a semiconductor device includes a first group of source/drain structures on a first group of fin structures on a substrate, a second group of source/drain structures on a second group of fin structures on the substrate, and a first gate structure and a second gate structure over the first and the second group of fin structures, respectively, the first and second groups of source/drain structures being proximate the first and second gate structures, respectively, wherein the first group of source/drain structures on the first group of fin structures has a first source/drain structure having a first vertical height different from a second vertical height of a second source/drain structure of the second group of source/drain structures on the second group of fin structures. 1. A semiconductor device , comprising:a first group of source/drain structures on a first group of fin structures on a substrate;a second group of source/drain structures on a second group of fin structures on the substrate; anda first gate structure and a second gate structure over the first and the second group of fin structures, respectively, the first and second groups of source/drain structures being proximate the first and second gate structures, respectively, wherein the first group of source/drain structures on the first group of fin structures has a first source/drain structure having a first vertical height different from a second vertical height of a second source/drain structure of the second group of source/drain structures on the second group of fin structures.2. The semiconductor device of claim 1 , wherein the first group of the source/drain structures further comprises:a third source/drain structure having a third vertical height less than the first vertical height of the first source/drain structure.3. The semiconductor device of claim 2 , wherein the second group of the ...

COMPOSITION AND METHOD FOR POLISHING AND INTEGRATED CIRCUIT

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer. 1. A slurry composition for polishing , comprising: at least one liquid carrier;', 'at least one abrasive; and', 'at least one pH adjusting agent; and, 'a slurry comprisingat least one cationic surfactant having at least one nitrogen atom in the molecule, wherein the cationic surfactant having at least one nitrogen atom in the molecule comprises an alkylated amine, an alkoxylated amine, an alkylated nitrogen-containing heterocyclic compound, an alkoxylated nitrogen-containing heterocyclic compound, or a mixture thereof, and is present in the slurry composition in an amount of at least 20 ppm by weight.2. The slurry composition of claim 1 , wherein the cationic surfactant contains a linear or branched alkyl group having at least 4 carbon atoms.3. The slurry composition of claim 1 , wherein the cationic surfactant contains at least one linear or branched alkoxylated repeating group containing at least two carbon atoms and one oxygen atom.4. The slurry composition of claim 1 , wherein the cationic surfactant is present in the slurry composition in an amount ranging from 1 claim 1 ,000 to 10 claim 1 ,000 ppm by weight.5. The slurry composition of claim 1 , further comprising at least one viscosity improver.6. The slurry composition of claim 5 , wherein the viscosity improver comprises at least one divalent cation claim 5 , at least one trivalent cation ...

POLISHING COMPOSITION

The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished. 1. A polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished , comprising:a cobalt dissolution inhibitor; anda pH adjusting agent, whereinthe polishing composition has a pH of 4 or more and 12 or less, andthe cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof.2. The polishing composition according to claim 1 , wherein the organic compound having an ether bond has a polyoxyethylene structure and/or a polyoxypropylene structure.3. The polishing composition according to claim 1 , wherein the organic compound having a hydroxyl group has an alcohol skeleton or a phenol skeleton.4. The polishing composition according to claim 1 , wherein the cobalt dissolution inhibitor is an organic compound having an ether bond and a hydroxyl group.5. A method of polishing a polishing object having a cobalt element-containing layer claim 1 , wherein a metal wiring layer is polished ...

POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE USING THE POLISHING AGENT

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent. 1. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive , wherein the additive contains at least one selected from the group consisting of the following compounds (1) and (2):(1) an allylamine polymer or a derivative thereof and(2) a diallylamine polymer or a derivative thereof2. The polishing agent according to claim 1 , wherein the average particle size of the tetravalent metal hydroxide particles is from 1 nm to 400 nm.3. The polishing agent according to claim 1 , wherein the pH of the polishing agent is from 3.0 to 7.0.4. The polishing agent according to claim 1 , wherein the content of the tetravalent metal hydroxide particles is from 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the polishing agent.5. The polishing agent according to claim 1 , wherein the zeta potential of the tetravalent metal hydroxide particles in the polishing agent is +10 mV or higher.6. The polishing agent according to claim 1 , wherein the content in total of the additive is 0.0001 by weight or more relative to 100 parts by weight of the polishing agent.7. The polishing agent according to claim 1 , further comprising polyvinyl alcohol.8. The polishing agent according to claim 1 , which is used for polishing a surface to be polished containing at least silicon oxide at the surface.9. The ...

SLURRY COMPOSITION FOR POLISHING TUNGSTEN

A slurry composition for polishing tungsten is provided. The slurry composition for polishing tungsten may include a water-soluble polymer, abrasive particles and an etching adjuster. 1. A slurry composition for polishing tungsten , the slurry composition comprising:a water-soluble polymer;abrasive particles; andan etching adjuster.2. The slurry composition of claim 1 , wherein the water-soluble polymer comprises at least one selected from the group consisting of polystyrene sulfonic acid claim 1 , polyvinyl sulfonic acid claim 1 , polyacrylamide methylpropane sulfonic acid claim 1 , poly-α-methylstyrene sulfonic acid claim 1 , poly-ρ-methylstyrene sulfonic acid and salts thereof.3. The slurry composition of claim 1 , wherein the water-soluble polymer is present in an amount of 0.01% by weight (wt %) to 5 wt % in the slurry composition.4. The slurry composition of claim 1 , wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide claim 1 , a metal oxide coated with an organic material or inorganic material and the metal oxide in a colloidal phase claim 1 , andwherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania and magnesia.5. The slurry composition of claim 1 , wherein the abrasive particles have a particle size of 20 nanometers (nm) to 250 nm claim 1 , and comprise abrasive particles having the same particle size or at least two different particle sizes.6. The slurry composition of claim 1 , wherein the abrasive particles are present in an amount of 1 wt % to 5 wt % in the slurry composition.8. The slurry composition of claim 1 , wherein the etching adjuster comprises at least one selected from the group consisting of lactic acid claim 1 , propionic acid claim 1 , isovaleric acid claim 1 , caproic acid claim 1 , isobutyric acid claim 1 , valeric acid claim 1 , butyric acid claim 1 , cyclopentanecarboxylic ...

POLISHING COMPOSITION AND METHOD FOR POLISHING SYNTHETIC RESIN

There is provided a polishing composition which can be more suitably used for polishing a synthetic resin product or the like, and a polishing method for polishing a polishing object using a polishing composition. There is provided a polishing composition containing abrasives, 0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt, a pyrrolidone compound or a caprolactam compound, and water and having a pH of 7.0 or less. 1. A polishing composition comprising:abrasives;0.01% by mass or more and 15% by mass or less of a monovalent acid-aluminum salt;a pyrrolidone compound or a caprolactam compound; andwater, whereina pH is 7.0 or less.2. The polishing composition according to claim 1 , wherein the pH is 4.5 or less.3. The polishing composition according to claim 1 , wherein the pH is 3.4 or less.4. The polishing composition according to claim 1 , wherein the abrasives contain alumina.5. The polishing composition according to claim 4 , wherein a volume-based average particle diameter of the alumina is 0.1 μm or more and 0.5 μm or less.6. The polishing composition according to claim 4 , wherein a BET specific surface area of the alumina is 10 m/g or more and 50 m/g or less.7. The polishing composition according to claim 4 , wherein an α-conversion rate of the alumina is 50% or more.8. The polishing composition according to claim 1 , wherein the abrasives contain silica.9. The polishing composition according to claim 8 , whereina volume-based average particle diameter of the silica is 0.02 μm or more and 0.3 μm or less.10. The polishing composition according to claim 1 , whereina content of the monovalent acid-aluminum salt is 5% by mass or more and 15% by mass or less.11. The polishing composition according to claim 1 , whereinthe monovalent acid-aluminum salt is at least one selected from aluminum nitrate or aluminum chloride.12. The polishing composition according to claim 1 , wherein the polishing composition is used for polishing a ...

CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD OF POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3: 4. The CMP slurry composition as claimed in claim 1 , wherein the biocide is present in an amount of about 0.001 wt % to about 1 wt % claim 1 , based on a total weight of the CMP slurry composition.5. The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition has a pH of about 3 to about 6.8. The CMP slurry composition as claimed in claim 1 , further comprising an oxidizing agent claim 1 , a catalyst claim 1 , or an organic acid.9. The CMP slurry composition as claimed in claim 8 , wherein the CMP slurry composition includes:about 0.001 wt % to about 20 wt % of the abrasive agent;about 0.001 wt % to about 1 wt % of the biocide;about 0.01 wt % to about 20 wt % of the oxidizing agent;about 0.001 wt % to about 10 wt % of the catalyst; andabout 0.001 wt % to about 20 wt % of the organic acid.10. A method of polishing a tungsten pattern wafer claim 1 , the method comprising polishing a tungsten pattern wafer using the CMP slurry composition as claimed in .13. The method as claimed in claim 10 , wherein the biocide is present in an amount of about 0.001 wt % to about 1 wt % claim 10 , based on a total weight of the CMP slurry composition.14. The method as claimed in claim 10 , wherein the CMP slurry composition has a pH of about 3 to about 6.17. The method as claimed in claim 10 , wherein the CMP slurry composition further includes an oxidizing agent claim 10 , a catalyst claim 10 , or an organic acid.18. The method as claimed in claim 17 , wherein the CMP slurry composition includes:about ...

CHEMICAL-MECHANICAL POLISHING COMPOSITIONS COMPRISING N,N,N',N'-TETRAKIS-(2-HYDROXYPROPYL)-ETHYLENEDIAMINE OR METHANESULFONIC ACID

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6. 1. A chemical-mechanical polishing (CMP) composition comprising:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6,(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid,(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of ranges from 2 to 6.2. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions or modified with sulfonic acid.3. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions selected from the group consisting of aluminate claim 1 , stannate claim 1 , zincate claim 1 , and plumbate.4. The chemical-mechanical polishing (CMP) composition according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with aluminate.5. The chemical-mechanical polishing (CMP) composition according to claim 1 , whereinthe total amount of (A) surface modified silica particles having a negative ...

CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR POLISHING MULTIPLE FILMS AND POLISHING METHOD USING THE SAME

A chemical mechanical polishing (CMP) slurry composition for polishing multiple films and a polishing method using the CMP slurry composition are provided. The CMP slurry composition includes abrasive particles, a surface roughness modifier including a water-soluble polymer, a polishing regulator including an organic acid, and a polishing profile improving agent including a nonionic surfactant. 1. A chemical mechanical polishing (CMP) slurry composition for polishing multiple films , the CMP slurry composition comprising:abrasive particles;a surface roughness modifier comprising a water-soluble polymer;a polishing regulator comprising an organic acid; anda polishing profile improving agent comprising a nonionic surfactant;2. The CMP slurry composition of claim 1 , further comprising a defect improving agent comprising an anionic surfactant.3. The CMP slurry composition of claim 2 , wherein the anionic surfactant comprises at least one selected from the group consisting of polyacrylic acid claim 2 , polymethacrylic acid claim 2 , a polystyrene-acrylic acid copolymer claim 2 , an acrylic acid-maleic acid copolymer claim 2 , an acrylic acid-ethylene copolymer claim 2 , an acrylic acid-acrylamide copolymer claim 2 , and an acrylic acid-poly acrylamide copolymer.4. The CMP slurry composition of claim 2 , wherein the defect improving agent is present in an amount of 0.005% by weight (wt %) to 0.1 wt % in the CMP slurry composition.5. The CMP slurry composition of claim 1 , whereinthe abrasive particles comprise at least one selected from the group consisting of a metal oxide, a metal oxide coated with an organic material or inorganic material, and a metal oxide in a colloidal phase, andthe metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia.6. The CMP slurry composition of claim 1 , wherein the abrasive particles are prepared by a liquid-phase method claim 1 , ...

HARD ABRASIVE PARTICLE-FREE POLISHING OF HARD MATERIALS

A method of CMP includes providing a slurry solution including ≥1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ≥1 buffering agent which provides a buffering ratio ≥1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mmor Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mmis pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface. 1. A slurry for chemical-mechanical polishing (CMP) , comprising:an aqueous medium;at least one per-compound oxidizer with a concentration between 0.01 M and 2.0 M;a pH level from 2 to 5 or from 8 to 11;at least one buffering agent different from said per-compound oxidizer that provides a buffering ratio of at least 1.5 which compares an amount of a strong acid needed to reduce said pH level from 9.0 to 3.0 with said buffering agent in a slurry solution comprising said aqueous medium and said per-compound oxidizer as compared to an amount of said strong acid needed to change reduce said pH level from 9.0 to 3.0 in said slurry solution without said buffering agent;{'sup': '2', 'wherein said slurry is exclusive of any hard slurry particles, or has only soft slurry particles that have throughout a Vickers hardness less than 300 Kg/mmor a Mohs Hardness less than (<) 4.'}2. The slurry of claim 1 , wherein said slurry solution further comprises transition metal ions in a concentration from 0.03 M to 1 M in addition to any transition metals ions that may be in said per-compound oxidizer.3. The slurry of claim 1 , wherein said slurry includes said soft slurry particles which comprise a metal oxide ...

POLISHING COMPOSITION

To provide a polishing composition in which abrasives are less likely to precipitate and precipitated and agglomerated abrasives easily redisperse. A polishing composition has abrasives, a liquid medium, metal oxide particles, and a water-soluble polymer. The average primary particle diameter of the metal oxide particles is 1/10 or less of the average primary particle diameter of the abrasives and the weight average molecular weight of the water-soluble polymer is 200 or more and 1000 or less. 1. A polishing composition comprising:abrasives;a liquid medium;metal oxide particles; anda water-soluble polymer, whereinan average primary particle diameter of the metal oxide particles is 1/10 or less of an average primary particle diameter of the abrasives and a weight average molecular weight of the water-soluble polymer is 200 or more and 1000 or less.2. The polishing composition according to whereinthe metal oxide is fumed alumina.3. The polishing composition according to claim 1 , whereinthe water-soluble polymer comprises at least either one of polyethylene glycol and polypropylene glycol.4. The polishing composition according to claim 1 , whereinthe abrasives comprise aluminum oxide particles.5. The polishing composition according to claim 2 , whereinthe water-soluble polymer comprises at least either one of polyethylene glycol and polypropylene glycol.6. The polishing composition according to claim 2 , whereinthe abrasives comprise aluminum oxide particles.7. The polishing composition according to claim 3 , whereinthe abrasives comprise aluminum oxide particles. The present invention relates to a polishing composition.When objects to be polished made of resin is polished using a slurry-like polishing composition, the polishing composition needs to be fed from a storage tank of the polishing composition to a polishing place of the objects to be polished using a tube or the like.However, abrasives in the polishing composition are likely to precipitate, and therefore ...

POLISHING COMPOSITION FOR MAGNETIC DISK SUBSTRATE

Embodiments relate to a polishing composition including colloidal silica, pulverized wet-process silica particles, and at least one of a nitrogen-containing organic compound and a nitrogen-containing polymer compound. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, a nitrogen-containing organic compound and/or a nitrogen-containing polymer compound, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. 1. A polishing composition for a magnetic disk substrate , the polishing composition comprising:colloidal silica having an average primary particle size of 5 to 200 nm;pulverized wet-process silica particles having an average particle size of 100 to 1000 nm;at least one of a nitrogen-containing organic compound and a nitrogen-containing polymer compound; andwater,wherein the colloidal silica accounts for 5 to 95 mass %, and the pulverized wet-process silica particles account for 5 to 95 mass %, of total silica particles, andwherein a concentration of the total silica particles is 1 to 50 mass %.2. A polishing composition for a magnetic disk substrate , the polishing composition comprising:colloidal silica having an average primary particle size of 5 to 200 nm;pulverized wet-process silica particles having an average particle size of 100 to 1000 nm;a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers; andwater;wherein the colloidal silica accounts for 5 to 95 mass %, and the pulverized wet-process silica particles account for 5 to 95 mass %, of total silica particles, andwherein a ...

POLISHING SLURRY AND POLISHING MATERIAL

A polishing slurry according to the present invention contains: abrasive grains made of a metal oxide; a permanganate; and an inorganic compound other than the permanganate. The inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate. It is preferable that the inorganic compound be contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate. It is also preferable that the abrasive grains made of a metal oxide be manganese oxide particles. 1. A polishing slurry comprising:abrasive grains made of a metal oxide;a permanganate; andan inorganic compound other than the permanganate,wherein the inorganic compound is such that a solution that is obtained by adding the inorganic compound to a 1.0 mass % aqueous solution of the permanganate so that the inorganic compound accounts for 1.0 mass % of the resultant aqueous solution has an oxidation-reduction potential higher than that of the 1.0 mass % aqueous solution of the permanganate.2. The polishing slurry as set forth in claim 1 ,wherein the inorganic compound is contained in an amount of 0.7 parts by mass or more and 150 parts by mass or less relative to 100 parts by mass of the permanganate.3. The polishing slurry as set forth in claim 1 ,wherein the abrasive grains made of a metal oxide are manganese oxide particles.4. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry has a pH at 25° C. of 1.0 or more and 8.0 or less before polishing.5. The polishing slurry as set forth in claim 1 ,wherein the polishing slurry is used in polishing that does not use fixed abrasive grains.6. A polishing material comprising:a first agent that contains abrasive ...

NEUTRAL TO ALKALINE CHEMICAL MECHANICAL POLISHING COMPOSITIONS AND METHODS FOR TUNGSTEN

A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten. 1. A chemical mechanical polishing composition comprising , as initial components: water;an oxidizing agent selected from the group consisting of iodate compounds, periodate compounds and mixtures thereof;colloidal silica abrasive particles comprising a nitrogen-containing compound;optionally, a pH adjusting agent; and,optionally, a biocide; and wherein a pH of the chemical mechanical polishing composition is equal to or greater than 7.2. The chemical mechanical polishing composition of claim 1 , wherein the oxidizing agent is in amounts of 0.001 wt % or greater.3. The chemical mechanical polishing composition of claim 1 , wherein the iodate compounds are selected from the group consisting of alkali metal iodates claim 1 , calcium diiodate claim 1 , magnesium diiodate claim 1 , ammonium iodate claim 1 , and mixtures thereof.4. The chemical mechanical polishing composition of claim 1 , wherein the periodate compounds are selected from the group consisting of alkali metal periodates claim 1 , calcium diperiodate claim 1 , magnesium diperiodate claim 1 , ammonium periodate and mixtures thereof.5. The chemical ...

INTERMEDIATE POLISHING COMPOSITION FOR SILICON SUBSTRATE AND POLISHING COMPOSITION SET FOR SILICON SUBSTRATE

Provided is a polishing composition which is used in a step upstream of a final polishing step of a silicon substrate and can effectively realize a high-quality surface after the final polishing step. According to the present invention, there is provided an intermediate polishing composition to be used in the intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and the final polishing step. The intermediate polishing composition includes an abrasive A, a basic compound B, and a surface protective agent S. The surface protective agent Sincludes a water-soluble polymer Phaving a weight average molecular weight of higher than 30×10and a dispersant D, and has a dispersibility parameter αof less than 80%. 1. An intermediate polishing composition to be used in an intermediate polishing step in a silicon substrate polishing process including both of the intermediate polishing step and a final polishing step , the intermediate polishing composition comprising:{'sub': 1', '1', '1, 'an abrasive A, a basic compound B, and a surface protective agent S, wherein'}{'sub': 1', '1', '1, 'sup': '4', 'the surface protective agent Sincludes a water-soluble polymer Phaving a weight average molecular weight of higher than 30×10and a dispersant D, and'}{'sub': 1', '1, 'a dispersibility parameter αof the surface protective agent Sis less than 80%.'}2. The intermediate polishing composition according to claim 1 , wherein a content of the dispersant Dis 0.8 times or less a content of the water-soluble polymer P.3. The intermediate polishing composition according to claim 1 , wherein a weight average molecular weight of the dispersant Dis 3×10or less.4. The intermediate polishing composition according to claim 1 , wherein the surface protective agent Sincludes a cellulose derivative as the water-soluble polymer P.5. The intermediate polishing composition according to claim 1 , wherein a content of the surface protective agent ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a first insulator; anda second insulator,wherein the oxide semiconductor includes a region overlapping with the second conductor and a region overlapping with the third conductor,wherein the first conductor includes a region overlapping with the oxide semiconductor with the first insulator positioned therebetween,wherein the second insulator includes an opening,wherein the first insulator is in contact with a side surface of the second insulator in the opening,wherein the first conductor includes a region facing the side surface of the second insulator with the first insulator positioned therebetween,wherein a first region of a surface of the second conductor is in contact with the first insulator,wherein a second region of a surface of the third conductor is in contact with the first insulator,wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, the first region has an angle of 30° or more and 60° or less to the bottom surface of the second conductor, andwherein in a cross section perpendicular to a bottom surface of the third conductor in a channel width direction, the second region has an angle of 30° or more and 60° or less to the bottom surface of the third conductor.2. The semiconductor device according to claim 1 ,wherein the second conductor have a fourth conductor which ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) elemental germanium or (ii) SiGewith 0.1≦x<1, wherein the CMP composition (Q) consists essentially of (A) aluminum particles in an amount of from 0.01 to 3 wt. % based on the total weight of the CMP composition (B) at least one oxidizer, (M) an aqueous medium and (N) optionally at least one pH adjusting agent wherein the CMP composition (Q) has a pH of from 2 to 6. 1. A method for chemical mechanical polishing of a substrate comprising elemental germanium or is represented by the formula SiGewith 0.1≦x<1 , wherein the method comprising applying a composition onto the substrate , the composition comprises:aluminum particles in an amount of 0.01 to 3 wt. % based on the total weight of the compositionat least one oxidizer,an aqueous medium andoptionally at least one pH adjusting agent andwherein the composition has a pH of 2 to 6.2. The method according to claim 1 , wherein the aluminum particles comprise fumed aluminum oxide.3. The method according to claim 1 , wherein the aluminum particles comprise at least 95 wt. % of aluminum oxide (AlO).4. The method according to claim 1 , wherein the aluminum particles have a specific surface area (BET) of 20 to 90 m/g.5. The method according to claim 1 , wherein the aluminum particles have a particle diameter claim 1 , d claim 1 , of 5 to 200 nm.6. The method according to claim 1 , wherein the oxidizer comprises a peroxide.7. The method according to claim 1 , wherein the amount of oxidizer is present in an amount of 0.2 to 3 wt % based on the total weight of the composition.8. The method according to claim 1 , wherein the oxidizer is hydrogen peroxide.9. The method according to claim 1 , wherein-the having a pH value is in the range of 3 to 5.10. The method according to claim 1 , wherein the elemental germanium is grown in trenches between shallow-trench isolation silicon dioxide.11. A process for ...

SEMICONDUCTOR STRUCTURE

A semiconductor structure includes a substrate having a frontside surface and a backside surface. A through-substrate via extends into the substrate from the frontside surface. The through-substrate via comprises a top surface. A metal cap covers the top surface of the through-substrate via. A plurality of cylindrical dielectric plugs is embedded in the metal cap. The cylindrical dielectric plugs are distributed only within a central area of the metal cap. The central area is not greater than a surface area of the top surface of the through-substrate via. 1. A semiconductor structure , comprising:a substrate having a frontside surface and a backside surface;a through-substrate via extending into the substrate from the frontside surface, wherein the through-substrate via comprises a top surface;a metal cap covering the top surface of the through-substrate via; anda plurality of cylindrical dielectric plugs embedded in the metal cap, wherein the cylindrical dielectric plugs are distributed only within a central area of the metal cap, and wherein the central area is not greater than a surface area of the top surface of the through-substrate via, wherein the metal cap is made of metallic material and is of a perforated screen structure with a plurality of rectangular openings filled by dielectric material, and wherein all of the cylindrical dielectric plugs are surrounded by the metal cap material.2. The semiconductor structure according to further comprising a plurality of circuit elements disposed on the frontside surface.3. The semiconductor structure according to further comprising an inter-layer dielectric (ILD) layer covering the plurality of circuit elements.4. The semiconductor structure according to claim 3 , wherein the through-substrate via penetrates through the ILD layer.5. The semiconductor structure according to claim 3 , wherein the top surface of the through-substrate via is a flat top surface and is flush with a top surface of the ILD layer.6. The ...

SEMICONDUCTOR SUBSTRATE POLISHING METHODS

Polishing slurries for polishing semiconductor substrates are disclosed. The polishing slurry may include first and second sets of colloidal silica particles with the second set having a silica content greater than the first set. 1. A method for polishing a semiconductor substrate having a front surface and a back surface generally parallel to the front surface , the method comprising contacting the front surface of the substrate with a polishing pad in the presence of a polishing slurry , the polishing slurry comprising:{'sub': '1', 'a first set of silica particles, the first set of silica particles having a silica content of Xwt %; and'}{'sub': 2', '2', '1, 'a second set of silica particles, the second set of silica particles being polymer-encapsulated and having a silica content of Xwt %, wherein Xis greater than X, wherein the weight ratio of the first set of silica particles to the second set of silica particles is from about 5:1 to about 1:5.'}2. The method as set forth in wherein the first set of silica particles are polymer-encapsulated.3. The method as set forth in wherein the back surface is not polished while polishing the front surface and wherein at least about 5 μm of material is removed from the front surface of the substrate.4. The method as set forth in wherein the substrate has a diameter of about 200 mm.5. The method as set forth in wherein the ratio of Xto about Xis at least about 2:1.6. The method as set forth in wherein the first set of silica particles and the second set of silica particles each have an average diameter of less than about 100 nm and the difference between the average diameter of the first set of particles and the average diameter of the second set of particles is less than about 30 nm.7. The method as set forth in comprising polishing a population of wafers with the polishing slurry claim 1 , wherein at least about 20% of the wafers have a roll-off amount of less than about −35 nm.8. The method as set forth in wherein the roll ...

INTEGRATED CIRCUIT INTERCONNECTS

Disclosed herein are integrated circuit (IC) interconnects, as well as related devices and methods. For example, in some embodiments, an interconnect may include a first material and a second material distributed in the first material. A concentration of the second material may be greater proximate to the top surface than proximate to the bottom surface. 1. An integrated circuit (IC) device , comprising:an interconnect having a top surface and a bottom surface;wherein:the interconnect includes a first material and a second material,the second material is distributed in the first material, anda concentration of the second material is greater proximate to the top surface than proximate to the bottom surface.2. The IC device of claim 1 , wherein the first material includes a metal.3. The IC device of claim 2 , wherein the first material includes cobalt claim 2 , copper claim 2 , tungsten claim 2 , aluminum claim 2 , titanium claim 2 , or ruthenium.4. The IC device of claim 1 , wherein the interconnect further includes:a liner material at the bottom surface and side faces of the interconnect.5. The IC device of claim 1 , wherein the interconnect is a conductive via.6. The IC device of claim 1 , wherein the interconnect is a conductive line.7. The IC device of claim 1 , wherein the second material includes a metal.8. The IC device of claim 1 , wherein the second material includes a transition metal.9. The IC device of claim 1 , wherein the second material includes silicon claim 1 , boron claim 1 , or phosphorous.10. The IC device of claim 1 , wherein the second material is a dopant in the first material.11. The IC device of claim 1 , wherein the concentration of the second material decreases in a direction from the top surface to the bottom surface.12. The IC device of claim 1 , wherein the interconnect includes an intermetallic compound claim 1 , and the intermetallic compound includes the second material.13. The IC device of claim 1 , wherein the interconnect has an ...

BLASTING ABRASIVES AND METHOD OF PRODUCING BLASTING ABRASIVES

Blasting abrasives comprise a plurality of particles. Blasting abrasives are classified into two basic types with many varieties of particles within these categories. Sharp, angular, and blocky abrasives and bead and/or rounded abrasives. Blasting abrasives are describe that are made from mixing particles of sharp, angular or blocky abrasives with bead or round abrasives. The blasting performance of any sharp, angular, or blocky abrasive may be improved by combining it with the bead or round abrasives in concentrations from 0.1 wt. % to 50 wt. %. 1. A blasting abrasive , comprising:an SAB abrasive, anda bead abrasive, wherein the bead abrasive is less than 70 wt. % of the weight of the blasting abrasive.2. The blasting abrasive of claim 1 , wherein the concentration of bead abrasive in the blasting abrasive is in the range of 0.1 wt. % to 50 wt. %.3. The blasting abrasive of claim 1 , wherein the concentration of bead abrasive in the blasting abrasive is in the range of 0.1 wt. % to 20 wt. %.4. The blasting abrasive of claim 1 , wherein the concentration of bead abrasive in the blasting abrasive is in the range of 0.5 wt. % to 12 wt. %.5. The blasting abrasive of claim 1 , wherein a void space in the blasting abrasive is less than a void space of the SAB abrasive component alone.6. The blasting abrasive of claim 1 , wherein the bead abrasive is at least one of glass beads abrasive claim 1 , ceramic bead claim 1 , or reflective glass beads.7. The blasting abrasive of claim 6 , wherein the glass bead abrasive is soda lime glass bead abrasive.8. The blasting abrasive of claim 1 , wherein the SAB abrasive is crushed glass abrasive.9. The blasting abrasive of claim 8 , wherein the bead abrasive is crushed glass abrasive having a specific gravity in the range of 2.6 to 3.1.10. The blasting abrasive of claim 9 , wherein the concentration of bead abrasive in the blasting abrasive is in the range of 0.1 wt. % to 40 wt. %.11. The blasting abrasive of claim 9 , wherein the ...

CMP COMPOSITION INCLUDING ANIONIC AND CATIONIC INHIBITORS

A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate. 1. A chemical mechanical polishing composition comprising:a water based liquid carrier;abrasive particles dispersed in the liquid carrier;an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof; andan anionic polymer or an anionic surfactant.2. The composition of further comprising:an iron-containing accelerator; anda stabilizer bound to the iron-containing accelerator.3. The composition of claim 1 , further comprising a hydrogen peroxide oxidizer.4. The composition of claim 1 , wherein the anionic polymer is selected from the group consisting of polysulfonic acids claim 1 , polyacrylic acids claim 1 , and polyphosphoric acids.5. The composition of claim 4 , wherein the anionic polymer is a polysulfonic acid polymer comprising sulfonic acid monomer units selected from the group consisting of polyvinyl sulfonic acid claim 4 , polystyrene sulfonic acid claim 4 , poly(2-acrylamido-2-methylpropane sulfonic acid) claim 4 , poly(styrenesulfonic acid-co-maleic acid) claim 4 , and mixtures thereof.6. The composition of claim 5 , wherein the anionic polymer is polyvinyl sulfonic acid (PVSA) or polystyrenesulfonic acid (PSSA).7. The ...

TITANIUM DIOXIDE CONTAINING RUTHENIUM CHEMICAL MECHANICAL POLISHING SLURRY

A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 Å; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pKin a range from about 6 to about 9. 1. A chemical mechanical polishing composition comprising:a water based liquid carrier;titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y of about 0.05 to about 0.5, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 Å and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 Å; anda pH in a range from about 7 to about 10.2. The composition of claim 1 , wherein the pH is in a range from about 7.5 to about 9.5.3. The composition of claim 1 , further comprising a pH buffer having a pKin a range from about 6 to about 9.4. The composition of claim 1 , comprising from about 0.05 wt. % to about 1 wt. % of the titanium oxide particles.5. The composition of claim 1 , further comprising a peroxide compound.6. A method for polishing a ruthenium containing substrate claim 1 , the method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(a) contacting the substrate with the polishing composition of ;'}(b) moving the polishing composition relative to the substrate; ...

METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing. 2. The method of wherein R is 2-hydroxyphenyl claim 1 , a Cto Cbranched or straight chain alkyl-substituted phenyl claim 1 , or a Cto Cbranched or straight chain alkyl (e.g. claim 1 , saturated) group.4. The method of wherein the hydroxamic acid or substituted hydroxamic acid is present in the polishing composition at a concentration of about 5 to about 3 claim 1 ,000 parts per million.5. The method of wherein the pattern dielectric consists of dielectric material selected from silicon oxide claim 1 , tetraethoxysilane claim 1 , phosphosilicate glass claim 1 , or borophosphosilicate glass.6. The method of wherein:the pattern dielectric includes an initial step height of at least 1000 angstroms,the method comprises reducing the step height to less than 900 angstroms to produce a region of planarized (blanket) dielectric, anda removal rate of the planarized (blanket) dielectric is less than 500 angstroms per minute.7. The method of whereinthe pattern dielectric includes an initial step height before polishing, and a final step height at an end of polishing, the difference between the initial step height and the final step height being step height reduction,the pattern dielectric includes an initial trench thickness before polishing, and a final trench thickness at an end of polishing, the difference between the initial trench thickness and the final trench thickness being trench loss, andthe trench loss is substantially less than (e.g., at least 10 percent less than) a trench loss that would occur using the same process on the same substrate with a slurry that is otherwise the same but does not contain hydroxamic acid, substituted hydroxamic acid, or salicylhydroxamic acid.8. The method of comprising removing at least 10 claim 1 ,000 angstroms of ...

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN

Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium. 1. A chemical mechanical polishing (CMP) composition comprising(A) inorganic particles, organic particles, or a mixture or composite thereof,(B) a protein, and(C) an aqueous medium.2. The CMP composition according to claim 1 , wherein the protein (B) is a protein comprising cysteine as amino acid unit.3. The CMP composition according to claim 1 , wherein the protein (B) is a fungal protein.4. The CMP composition according to claim 1 , wherein the protein (B) is a protein comprising more than 100 amino acid units.5. The CMP composition according to claim 1 , wherein the protein (B) is hydrophobin or comprises at least one hydrophobin unit.6. The CMP composition according to claim 1 , wherein the particles (A) are ceria particles.7. The CMP composition according to claim 1 , wherein the mean particle size of the particles (A) is from 50 nm to 300 nm claim 1 , as determined by dynamic light scattering techniques.8. The CMP composition according to claim 1 , further comprising(H) a sugar compound.9. The CMP composition according to claim 8 , whereinthe sugar compound (H) is selected from the group consisting of mono-, di-, tri-, tetra-, penta-, oligo- and polysaccharides, and oxidized monosaccharides.10. The CMP composition according to whereinthe sugar compound (H) is selected from the group consisting of glucose, galactose, saccharose, sucralose, and stereoisomers thereof.11. The CMP composition according to claim 1 , wherein the pH value of the composition is in the range of from 5 to 9.12. The CMP composition according to claim 1 , wherein(A) are ceria particles, and(B) is hydrophobin.13. A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of a substrate in the presence of a CMP composition as defined in .14. A substrate ...

POLISHING AGENT, POLISHING AGENT SET, AND SUBSTRATE POLISHING METHOD

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers. 1. A polishing agent comprising:water,an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, andat least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.2. The polishing agent according to claim 1 , wherein a ratio of a content of the cationic polymer with respect to a content of the polyalkylene glycol is 0.0005 or greater and 0.03 or less in terms of mass ratio.3. The polishing agent according to claim 1 , comprising no polyvinyl alcohol.4. The polishing agent according to claim 1 , wherein the polyalkylene glycol is at least one selected from the group consisting of polyethylene glycol and polypropylene glycol.5. The polishing agent according to claim 1 , wherein a content of the polyalkylene glycol is 0.01 mass % or greater based on a total mass of the polishing agent.6. The polishing agent according to claim 1 , wherein the hydroxide of a tetravalent metal element is at least one selected from the group consisting of hydroxide of rare earth metal element and hydroxide of zirconium.7. The polishing agent according to claim 1 , wherein a mean particle diameter of the abrasive grain is 1 nm or greater and 300 nm or less.8. The polishing agent according to claim 1 , wherein a content of the abrasive grain is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.9. The polishing agent according to claim 1 , wherein a pH is 3.0 or greater and 12.0 or less.10. The polishing agent according to claim 1 , used for polishing of a surface to be polished containing silicon oxide.11. A ...

POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON SUBSTRATE

To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.4, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the second standard solution is 65% or less. 1. A polishing composition comprising:abrasives; anda water-soluble polymer, whereinthe water-soluble polymer satisfies following two conditions (A) and (B):Condition (A): in a first standard solution containing silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water, in which a concentration of the silica is 0.48% by mass, a concentration of the water-soluble polymer is 0.0125% by mass, and a pH is 10.0, an adsorption ratio defined as a ratio of an amount of the water-soluble polymer adsorbed to the silica to a total amount of the water-soluble polymer contained in the first standard solution is 10% or more; andCondition (B): in a second standard solution containing silica ...

Cmp slurry composition for polishing copper, and polishing method using same

The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine.

COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR REDUCING CHEMICAL MECHANICAL POLISHING SURFACE DEFECTS

The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic. 1. A chemical mechanical polishing (CMP) composition , comprising:a surfactant having one hydrophobic end and one hydrophilic end opposite to the hydrophobic end.2. The CMP composition of claim 1 , wherein the surfactant comprises polyoxyethylene (POE)-based material.3. The CMP composition of claim 2 , wherein the surfactant comprises an ether group.4. The CMP composition of claim 2 , wherein the surfactant comprises polyoxyethylene alkyl ether (PAE).5. The CMP composition of claim 2 , wherein the surfactant comprises polyoxyethylene alkylphenyl ether (PAPE).6. The CMP composition of claim 1 , wherein the surfactant occupies at least 0.0001 wt % of the overall CMP composition.7. The CMP composition of claim 1 , wherein the surfactant is configured to modify a surface from hydrophobic to hydrophilic.8. A chemical mechanical polishing (CMP) slurry claim 1 , comprising:an abrasive;a chelator;an oxidizing agent; anda surface modificator, configured to modify a surface from hydrophobic to hydrophilic.9. The CMP slurry of claim 8 , wherein the surface modificator occupies at least 0.0001 wt % of the CMP slurry.10. The CMP slurry of claim 8 , wherein the surface modificator comprises a linear polymer chain having one hydrophobic end and one hydrophilic end.11. The CMP slurry of claim 10 , wherein the linear polymer chain comprises an ether group.12. The CMP slurry of claim 10 , wherein the linear polymer chain comprises polyoxyethylene (POE).13. The CMP ...

Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R 1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

ALTERNATIVE OXIDIZING AGENTS FOR COBALT CMP

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt. 1. A chemical-mechanical polishing composition comprising:(a) an abrasive;(b) a cobalt accelerator;(c) an oxidizing agent that oxidizes a metal, wherein the oxidizing agent is selected from a nitro compound, a nitroso compound, an N-oxide compound, a nitrite compound, a nitrate compound, a hydroxylamine compound, an oxime compound, and combinations thereof,wherein the polishing composition has a pH of about 4 to about 10.2. The polishing composition of claim 1 , wherein the cobalt accelerator is selected from an N-di(carboxylalkyl)amine claim 1 , an N-di(hydroxyalkyl)amine claim 1 , an N claim 1 ,N-di(hydroxyalkyl)-N-carboxylalkylamine claim 1 , a dicarboxyheterocycle claim 1 , a heterocyclylalkyl-α-amino acid claim 1 , an N-aminoalkylamino acid claim 1 , an unsubstituted heterocycle claim 1 , an alkyl-substituted heterocycle claim 1 , a carboxylic acid claim 1 , a dicarboxylic acid claim 1 , a tricarboxylic acid claim 1 , an alkylamine claim 1 , an N-aminoalkyl-α-amino acid claim 1 , and combinations thereof.3. The polishing composition of claim 1 , wherein the polishing composition further comprises a cobalt corrosion inhibitor.4. The polishing composition of claim 1 , wherein the abrasive is silica.5. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 5 wt. % of the abrasive.6. The polishing composition of claim 5 , wherein the polishing composition comprises about 0.1 wt. % to about 3 wt. % of the abrasive.7. The polishing composition of claim 2 , wherein the cobalt accelerator is ...

SLURRY AND POLISHING METHOD

A slurry comprises abrasive grains, a glycol, and water, wherein an average particle diameter of the abrasive grains is 120 nm or smaller, and a pH is 4.0 or higher and lower than 8.0. A polishing method comprises a step of polishing a metal by use of the slurry. 1. A slurry comprising:abrasive grains;a glycol; andwater, whereinan average particle diameter of the abrasive grains is 120 nm or smaller, anda pH is 4.0 or higher and lower than 8.0.2. The slurry according to claim 1 , wherein the pH is higher than 5.0 and lower than 8.0.3. The slurry according to claim 1 , wherein the abrasive grains comprise silica.4. The slurry according to claim 1 , wherein a mass ratio of a content of the abrasive grains with respect to a content of the glycol is 0.01 to 150.5. The slurry according to claim 1 , wherein the glycol comprises a glycol in which a number of carbon atoms of an alkylene group between two hydroxy groups is 5 or less.6. The slurry according to claim 1 , wherein the glycol comprises at least one selected from the group consisting of ethylene glycol claim 1 , 1 claim 1 ,2-butanediol claim 1 , 1 claim 1 ,3-butanediol claim 1 , 1 claim 1 ,4-butanediol and 1 claim 1 ,5-pentanediol.7. The slurry according to claim 1 , wherein the glycol comprises ethylene glycol.8. The slurry according to claim 1 , further comprising an organic acid component.9. The slurry according to claim 1 , further comprising a metal corrosion preventive agent.10. The slurry according to claim 1 , for use in polishing a cobalt-based metal.11. A polishing method comprising a step of polishing a metal by use of the slurry according to .12. The polishing method according to claim 11 , wherein the metal comprises a cobalt-based metal.13. The slurry according to claim 1 , wherein the glycol comprises at least one selected from the group consisting of 1 claim 1 ,4-pentanediol claim 1 , 1 claim 1 ,5-pentanediol claim 1 , 1 claim 1 ,5-hexanediol claim 1 , 1 claim 1 ,6-hexanediol claim 1 , dipropylene ...

Chemical mechanical polishing method for tungsten

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

CHEMICAL-MECHANICAL POLISHING SOLUTION HAVING HIGH SILICON NITRIDE SELECTIVITY

A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significatntly reduce the defects on Oxide surface which has an excellent market application prospect. 1. A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity , comprising abrasive particles and a compound containing one or more carboxyl groups.2. The chemical-mechanical polishing slurry as claimed in wherein the abrasive particles are Silica particles.3. The chemical-mechanical polishing slurry as claimed in wherein the mass percentage concentration of the abrasive particles is 0.5˜8 wt %.4. The chemical-mechanical polishing slurry as claimed in wherein the mass percentage concentration of said abrasive particles is 1%˜5 wt %.51. The chemical-mechanical polishing slurry as claimed in wherein the compound containing one or more carboxyl groups is one or more selected from the group of pyridine compound claim 3 , piperidine compound claim 3 , pyrrolidine compound claim 3 , pyrrole compound and all the derivatives above thereof.6. The chemical-mechanical polishing slurry as claimed in wherein the compound containing one or more carboxyl groups is one or more selected from the group of 2-carboxyl pyridine claim 5 , 3-carboxyl pyridine claim 5 , 4-carboxyl pyridine claim 5 , 2 claim 5 ,3-dicarboxyl pyridine claim 5 , 2 claim 5 ,4-dicarboxyl pyridine claim 5 , 2 claim 5 ,6-dicarboxyl pyridine claim 5 , 3 claim 5 ,5-dicarboxyl pyridine claim 5 , 2-carboxyl piperidine claim 5 , 3-carboxyl piperidine claim 5 , 4-carboxyl piperidine claim 5 , 2 claim 5 ,3-dicarboxyl piperidine claim 5 , 2 claim 5 ,4-dicarboxyl piperidine claim 5 , 2 claim 5 ,6-dicarboxyl piperidine claim 5 , 3 claim 5 ,5-dicarboxyl piperidine claim 5 , 2- ...

CERIUM OXIDE ABRASIVE GRAINS

In one aspect, the present disclosure provides cerium oxide'abrasive grains that can improve the polishing rate. 1. Cerium oxide abrasive grains for use in an abrasive ,{'sup': '2', 'wherein an amount of water production in a temperature range of 300° C. or less measured using temperature-programmed reaction is 8 mmol/mor more per unit surface area of the cerium oxide abrasive grains.'}2. The cerium oxide abrasive grains according to claim 1 ,{'sup': '2', 'wherein a BET specific surface area of the cerium oxide abrasive grains is 9.8 m/g or more.'}3. The cerium oxide abrasive grains according to claim 1 ,wherein an average primary particle size of the cerium oxide abrasive grains is not less than 5 nm and not more than 150 nm.4. The cerium oxide abrasive grains according to claim 1 ,wherein a crystallite diameter of the cerium oxide abrasive grains is not less than 5 nm and not more than 50 nm.5. The cerium oxide abrasive grains according to claim 1 ,wherein the cerium oxide abrasive grains do not substantially contain silicon.6. The cerium oxide abrasive grains according to claim 1 ,wherein the cerium oxide abrasive grains are composite oxide particles with some cerium atoms in the cerium oxide abrasive grains being substituted with zirconium atoms.78-. (canceled)9. A polishing liquid composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the cerium oxide abrasive grains according to ; and'}an aqueous medium.10. The polishing liquid composition according to claim 9 ,wherein a content of the cerium oxide abrasive grains is not less than 0.05 mass % and not more than 10 mass %.11. The polishing liquid composition according to claim 9 ,wherein the polishing liquid composition is used for polishing a silicon oxide film.12. A method for producing a semiconductor substrate claim 9 , the method comprising the step of:{'claim-ref': {'@idref': 'CLM-00009', 'claim 9'}, 'polishing a substrate to be polished using the polishing liquid composition according ...

POLISHING AGENT, STOCK SOLUTION FOR POLISHING AGENT, AND POLISHING METHOD

A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rof the abrasive grains is 50 nm or more, a ratio R/Rof the average particle diameter Rto an average minor diameter Rof the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive. 1. A polishing agent comprising abrasive grains and water ,wherein the abrasive grains contain silica particles,{'sub': 'ave', 'an average particle diameter Rof the abrasive grains is 50 nm or more,'}{'sub': ave', 'min', 'ave', 'min, 'a ratio R/Rof the average particle diameter Rto an average minor diameter Rof the abrasive grains is 1.0 to 2.0, and'}a zeta potential of the abrasive grains in the polishing agent is positive.2. The polishing agent according to claim 1 , wherein the silica particles contain colloidal silica.3. The polishing agent according to claim 1 , wherein the average particle diameter Ris 50 to 100 nm.4. The polishing agent according to claim 1 , wherein the average particle diameter Rexceeds 60 nm.5. The polishing agent according to claim 1 , wherein the ratio R/Ris 1.0 to 1.7.6. The polishing agent according to claim 1 , further comprising a pH adjusting agent.7. The polishing agent according to claim 1 , wherein a pH is 2.0 to 4.0.8. A stock solution for a polishing agent for obtaining the polishing agent according to claim 1 ,wherein the stock solution is diluted with water to obtain the polishing agent.9. A polishing method comprising a step of polishing and removing at least a part of a silicon oxide film by using the polishing agent according to .10. The polishing method according to claim 9 , wherein the silicon oxide film comprises at least one selected from the group consisting of a TEOS film and a SiHfilm.11. The polishing method according to claim 9 , wherein the silicon oxide film comprises a TEOS film.12. The polishing method according to claim 9 , wherein the ...

COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD USING COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

An object of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. 1. A composition for surface treatment comprising:a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphonic acid (salt) group, a carboxylic acid (salt) group, and an amino group, andwater, whereinthe pH value is less than 7, andthe polymer compound has a pKa of 3 or less, and a weight average molecular weight of 3,500 or more and 100,000 or less.2. The composition for surface treatment according to claim 1 , wherein the polymer compound contains a copolymer containing a constituent unit having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group claim 1 , a carboxylic acid (salt) group claim 1 , and an amino group and other constituent unit.3. The composition for surface treatment according to claim 2 , wherein the other constituent unit contains a constituent unit derived from an ethylenically unsaturated monomer.4. The composition for surface treatment according to claim 1 , wherein the polymer compound contains a homopolymer consisting of only a constituent unit having at least one acid functional group selected from the group consisting of a sulfonic acid (salt) group claim 1 , a phosphoric acid (salt) group claim 1 , and a phosphonic acid (salt) group.5. The composition for surface treatment according to claim 1 , wherein the polymer compound contains a polymer compound having a sulfonic acid (salt) group.6. The composition for surface treatment according to claim 5 , wherein the polymer compound having a sulfonic acid (salt) group is at least one selected from the group consisting of a sulfonic acid (salt) group-containing polyvinyl alcohol claim 5 , a sulfonic acid (salt) group-containing polystyrene claim 5 , a sulfonic acid (salt) group- ...

STRESS RELAXED BUFFER LAYER ON TEXTURED SILICON SURFACE

A method of forming a stress relaxed buffer layer (SRB) on a textured or grooved silicon (Si) surface and the resulting device are provided. Embodiments include forming a textured surface in an upper surface of a Si wafer; epitaxially growing a low-temperature seed layer on the textured surface of the Si wafer; depositing a SRB layer over the low-temperature seed layer; and planarizing an upper surface of the SRB layer. 1. A method comprising: 'forming pyramids in the upper surface of the Si wafer by etching, wherein the pyramids have a height less than 300 nm and a Si <111> surface;', 'forming a textured or V-grooved surface in an upper surface of a silicon (Si) wafer, wherein the step of forming the textured or V-grooved surface on the upper surface of the Si wafer includesepitaxially growing a low-temperature seed layer on the textured surface of the Si wafer;depositing a stress relaxed buffer (SRB) layer over the low-temperature seed layer; andplanarizing an upper surface of the SRB layer.2. The method according to claim 1 , wherein the planarizing comprises:planarizing the upper surface of the SRB layer with chemical-mechanical planarization (CMP).3. The method according to claim 1 , further comprising:epitaxially growing the low-temperature seed layer in trenches of the textured or V-grooved surface of the Si wafer.4. The method according to claim 3 , further comprising:epitaxially growing the low-temperature seed layer to a thickness of 10 nm to 40 nm.5. The method according to claim 3 , wherein the pyramids have a depth of less than 200 nm.6. The method according to claim 1 , wherein the low-temperature seed layer comprises germanium (Ge) claim 1 , indium phosphide (InP) claim 1 , or gallium arsenide (GaAs).7. The method according to claim 1 , further comprising:epitaxially growing the SRB layer over the low-temperature seed layer at a thickness of 200-500 nm,{'sub': x', '1-x', 'x', '1-x', 'y', '1-y, 'wherein the SRB layer includes silicon germanium (SiGe), ...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

A manufacturing method of a semiconductor structure having an array area and a periphery area is provided. The manufacturing method includes the following steps. A substrate is provided. A plurality of trenches is formed on the substrate. The plurality of trenches is filled with insulating material to form at least one first insulating layer. A polysilicon layer is deposited on the substrate and the first insulating layer. A photoresist mask is formed on the periphery area. A portion of the polysilicon layer on the array area is etched, such that a top surface of the polysilicon layer on the array area is higher than the first insulating layer and lower than a top surface of the polysilicon layer on the periphery area. The photoresist mask is removed. A planarization process is implemented to remove a portion of the polysilicon layer on the array area and on the periphery area. 1. A manufacturing method of a semiconductor structure having an array area and a periphery area , the manufacturing method comprising:providing a substrate;forming a plurality of trenches on the substrate;filling the trenches with insulating material to form at least one first insulating layer;depositing a polysilicon layer on the substrate and the first insulating layer;forming a photoresist mask on the periphery area;etching a portion of the polysilicon layer on the array area, such that a top surface of the polysilicon layer on the array area is higher than the first insulating layer and lower than a top surface of the polysilicon layer on the periphery area;removing the photoresist mask; andimplementing a planarization process to remove a portion of the polysilicon layer on the array area and on the periphery area.2. The manufacturing method according to claim 1 , wherein the step of forming the trenches comprises:depositing a second insulating layer;patterning the second insulating layer to form a plurality of holes; andetching the substrate by the holes to form the trenches.3. The ...

POLISHING LIQUID, POLISHING LIQUID SET, AND POLISHING METHOD

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups. 1. A polishing liquid comprising: abrasive grains; a hydroxy acid; a polyol; and a liquid medium , whereina zeta potential of the abrasive grains is positive, andthe hydroxy acid has one carboxyl group and one to three hydroxyl groups.2. The polishing liquid according to claim 1 , wherein the hydroxy acid contains a compound having one carboxyl group and one hydroxyl group.3. The polishing liquid according to claim 1 , wherein the hydroxy acid contains a compound having one carboxyl group and two hydroxyl groups.4. The polishing liquid according to claim 1 , wherein the polyol contains polyether polyol.5. The polishing liquid according to claim 1 , wherein a content of the hydroxy acid is 0.01 to 1.0% by mass.6. The polishing liquid according to claim 1 , wherein a content of the polyol is 0.05 to 5.0% by mass.7. The polishing liquid according to claim 1 , wherein the polishing liquid is used for polishing a surface to be polished containing silicon oxide.8. A polishing liquid set comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'constituent components of the polishing liquid according to , separately stored as a first liquid and a second liquid, wherein'}the first liquid contains the abrasive grains and a liquid medium, andthe second liquid contains the hydroxy acid, the polyol, and a liquid medium.9. A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to .10. A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to .11. A polishing method for a base substrate having an insulating material and silicon nitride claim 8 , ...