СПОСОБ ИЗГОТОВЛЕНИЯ НАНОЧАСТИЦ ИЛИ НИТЕВИДНЫХ НАНОКРИСТАЛЛОВ, СПОСОБ ИЗГОТОВЛЕНИЯ НЕОРГАНИЧЕСКИХ ФУЛЛЕРЕНОПОДОБНЫХ СТРУКТУР ХАЛЬКОГЕНИДА МЕТАЛЛА, НЕОРГАНИЧЕСКИЕ ФУЛЛЕРЕНОПОДОБНЫЕ СТРУКТУРЫ ХАЛЬКОГЕНИДА МЕТАЛЛА, СТАБИЛЬНАЯ СУСПЕНЗИЯ IF-СТРУКТУР ХАЛЬКОГЕНИДА МЕТАЛЛА, СПОСОБ ИЗГОТОВЛЕНИЯ ТОНКИХ ПЛЕНОК ИЗ IF-СТРУКТУР ХАЛЬКОГЕНИДА МЕТАЛЛА И ТОНКАЯ ПЛЕНКА, ПОЛУЧЕННАЯ ТАКИМ СПОСОБОМ, И НАСАДКА ДЛЯ РАСТРОВОГО МИКРОСКОПА

Изобретение может быть использовано для получения светочувствительных элементов в солнечных батареях, при производстве инертных насадок для микроскопов SPM, аккумуляторных батарей и т.д. Сущность изобретения: предлагается способ приготовления наночастиц металлических оксидов, содержащих введенные частицы металла, относящийся также к получаемым из данных оксидов неорганическим фуллереноподобным (IF) структурам халькогенидов металла с интеркалированным и/или заключенным внутри металлом, который включает нагрев материала из металла I с водяным паром или выпаривание электронным лучом упомянутого материала из металла I с водой или другим подходящим растворителем, в присутствии соли металла II; сбор оксида металла I с присадкой металла II или продолжение процесса путем последующего сульфидирования, дающего достаточные количества IF-структур халькогенида металла I с интеркалированным и/или заключенным внутри металлом II. Соль металла II представляет собой предпочтительно соль щелочного, щелочноземельного ...

КРИСТАЛЛИЧЕСКИЕ АНТИТЕЛА ПРОТИВ hTNFα

Настоящее изобретение относится к области иммунологии. Предложен способ порционной кристаллизации для кристаллизования антитела против hTNFα, включающий комбинирование водного раствора антитела, соли неорганического фосфата и ацетатного буфера и инкубацию полученной смеси. Рассмотрены кристалл антитела, в частности антитела D2E7, полученный способом по изобретению, фармацевтические композиции, в том числе инъецируемые жидкие композиции, содержащие кристалл антитела, суспензии кристаллов, а также способы лечения связанного с hTNFα расстройства и применение кристаллов антитела для получения фармацевтической композиции для лечения таких заболеваний. Настоящее изобретение может найти дальнейшее применение в терапии связанных с hTNFα заболеваний. 10 н. и 19 з.п. ф-лы, 3 табл., 7 ил., 47 пр.

СПОСОБ СИНТЕЗА ПОЛУПРОВОДНИКОВЫХ КВАНТОВЫХ ТОЧЕК

Изобретение относится к получению полупроводниковых квантовых точек типов ядро и ядро-оболочка методом коллоидного синтеза, которые могут быть использованы в производстве различных люминесцентных материалов, а также в качестве основы для производства сверхминиатюрных светодиодов, источников белого света, одноэлектронных транзисторов, нелинейно-оптических устройств, фоточувствительных и фотогальванических устройств. Способ получения полупроводниковых квантовых точек на основе халькогенидов металлов II или IV группы включает синтез ядер нанокристаллов из прекурсора, содержащего халькоген, и прекурсора, содержащего металл II или IV группы, с использованием органического растворителя и модификатора поверхности, в качестве которого используют (аминоалкил)триалкоксисиланы. Синтез ядер осуществляют при постоянной температуре в пределах от 150 до 250°С в течение от 15 с до 1 часа и дополнительно проводят обработку реакционной смеси, содержащей ядра нанокристаллов, УФ-светом в течение 1÷10 мин и ...

METHOD FOR PRODUCTION OF SEED PLATE

METHOD OF GROWING MONOCRYSTALS OF POTASSIUM DIHYDROPHOSPHATE GROUP

Устройство для предподготовки раствора к кристаллизации

Настоящее техническое решение относится к оборудованию для кристаллизации различных веществ в биотехнологической и химической промышленностях и может быть применено для выделения кристаллизацией продуктов микробиологического синтеза, продуктов сахарной промышленности, солей и других веществ, кристаллизуемых из растворов.Заявленное устройство для предподготовки раствора к кристаллизации содержит ультразвуковой аэродинамический распылитель - генератор аэрозоля, представляющий собой газоструйный излучатель, в активную зону которого подается жидкость - концентрируемый раствор; рабочую емкость с кулисами внутри нее, направляющими потоки аэрозоля и паровоздушной смеси; выводной патрубок для сконцентрированной и охлажденной жидкости, представляющей собой сконденсированный аэрозоль; выводной патрубок для паровоздушной смеси.Характерная особенность устройства - распыление подготавливаемой к кристаллизации жидкости ультразвуковым аэродинамическим генератором аэрозолей с последующей конденсацией аэрозоля ...

РОТОРНЫЙ ОСЕВОЙ НАСОС ДЛЯ ИСПОЛЬЗОВАНИЯ ПРЕИМУЩЕСТВЕННО В КРИСТАЛЛИЗАЦИОННЫХ УСТАНОВКАХ

Изобретение относится к технике, связанной с выращиванием кристаллов из растворов, и может быть использовано при скоростном выращивании профилированных кристаллов (например, КН2РО4, KD2PO4, BaNO3 и др.). Роторный осевой насос содержит ротор и выполненный из химически стойкого материала корпус с впускными окнами, входными и выходными сепараторами, снабженный, по крайней мере, одним направляющим раствор соплом. Корпус выполнен в виде одной неразборной детали с сепараторами в виде радиальных пластин, а ротор изготовлен таким образом, что содержит не более двух деталей из химически стойкого материала, при этом количество и размеры лопастей винта ротора соответствуют размерам секций входного сепаратора корпуса. Дополнительно ось ротора может армироваться металлическим стержнем, не имеющим контакта с раствором. Изготовленный таким образом насос имеет минимальное число щелей и резьбовых соединений, что уменьшает вероятность массовой кристаллизации и обеспечивает устойчивый рост кристаллов из раствора ...

СПОСОБ И УСТРОЙСТВО ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ

... 1. Устройство для выращивания кристаллов из затравочного кристалла, содержащее ограничительный кожух для размещения вокруг затравочного кристалла, имеющий множество проходящих через него каналов; и удерживающее устройство для удержания затравочного кристалла в ограничительном кожухе. 2. Устройство по п. 1, в котором каналы являются нелинейными в направлении, параллельном поперечному сечению ограничительного кожуха. 3. Устройство по п. 1, в котором ограничительный кожух имеет противоположные открытые концы. 4. Устройство по п. 3, в котором ограничительный кожух состоит из противоположных главных стенок и противоположных первой и второй боковых стенок, причем указанные главные стенки имеют образованные в них каналы. 5. Устройство по п. 4, в котором главные стенки и первая боковая стенка являются дугообразными, а вторая боковая стенка является плоской. 6. Устройство по п. 4, в котором главные стенки и первая и вторая боковые стенки формуются как единое целое из металлического листа, имеющего ...

РОТОРНЫЙ ОСЕВОЙ НАСОС ДЛЯ ИСПОЛЬЗОВАНИЯ ПРЕИМУЩЕСТВЕННО В КРИСТАЛЛИЗАЦИОННЫХ УСТАНОВКАХ

... 1. Роторный осевой насос, содержащий ротор и выполненный из химически стойкого материала корпус с засасывающими окнами, входными и выходными сепараторами, снабженный, по крайней мере, одним направляющим раствор соплом, отличающийся тем, что корпус выполнен в виде одной неразборной детали с сепараторами в виде радиальных пластин, а ротор изготовлен таким образом, что содержит не более двух деталей из химически стойкого материала, при этом количество и размеры лопастей винта ротора соответствуют размерам секций входного сепаратора корпуса. 2. Роторный осевой насос по п.1, отличающийся тем, что в качестве химически стойкого материала для изготовления корпуса насоса используется кварцевое стекло. 3. Роторный осевой насос по п.1, отличающийся тем, что ротор выполнен в виде единой детали, представляющей собой многолопастной винт. 4. Роторный осевой насос по п.1, отличающийся тем, что ротор выполнен в виде соединенных между собой крыльчатки и оси. 5. Роторный осевой насос по п.1, отличающийся ...

УСТАНОВКА ДЛЯ ВЫРАЩИВАНИЯ КРИСТАЛЛОВ ИЗ РАСТВОРОВ

... 1. Установка для выращивания кристаллов, содержащая кристаллизационный стакан, крышку кристаллизационного стакана, платформу с затравочным кристаллом и механизм герметизации затравочного кристалла, отличающаяся тем, что в крышке выполнено эксцентрично расположенное герметично закрываемое направляющей втулкой отверстие для ввода механизма герметизации затравочного кристалла, который выполнен в виде поджимаемого к поверхности платформы колпачка, шарнирно установленного на L-образной штанге, имеющей возможность перемещения соосно направляющей втулке, причем внутри штанги выполнен канал для подключения полости колпачка к источнику давления. ! 2. Установка по п.1, отличающаяся тем, что для подключения полости колпачка к каналу внутри L-образной штанги применен гибкий шланг. ! 3. Установка по п.1, отличающаяся тем, что поджатие колпачка к платформе обеспечивают воздействием груза на свободный конец штанги. ! 4. Установка по п.1, отличающаяся тем, что поджатие колпачка к платформе обеспечивают ...

СПОСОБ ИЗМЕРЕНИЯ ПРИРОСТА ОПТИЧЕСКИ АНИЗОТРОПНЫХ ПРОЗРАЧНЫХ КРИСТАЛЛОВ

Изобретение относится к области выращивания кристаллов, может быть использовано при отработке технологии выращивания кристаллов из растворов и позволяет повысить точность измерения для кристаллов с поперечным размером более 150 мм. Кристалл и прилегающую к нему область раствора освещают коллимированным пучком естественно поляризованного света. Освещение проводят для оптически отрицательных кристаллов со стороны острого угла между растущей гранью и оптической осью кристалла, а для оптически положительных кристаллов со стороны тупого угла. Прошедшее излучение проецируют на экран и по смещению границы тени в изображении на нем определяют величину прироста кристалла. Достигают точности в измерении в 1%.

СПОСОБ ПОЛУЧЕНИЯ МОНОКРИСТАЛЛОВ ОРГАНО-НЕОРГАНИЧЕСКОГО КОМПЛЕКСНОГО ГАЛОГЕНИДА

Изобретение относится к технологии получения монокристаллов из растворов за счет химического превращения растворителя. Способ получения монокристаллов органо-неорганического комплексного галогенида (ОНКГ) состава ABX, где z = 1-2, k = 2-4, 0 Подробнее

СПОСОБЫ И УСТРОЙСТВА ДЛЯ ОСУЩЕСТВЛЕНИЯ МАТРИЧНЫХ МИКРОКРИСТАЛЛИЗАЦИЙ

... 1. Способ осуществления матричных микрокристаллизаций для определения подходящих условий кристаллизации для молекулы, включающий формирование матрицы микрокристаллизаций, где каждая микрокристаллизация включает каплю, содержащую раствор маточной жидкости, композиция которого варьируется в матрице, и молекулу, которая должна быть кристаллизована, причем капля имеет объем, меньший, чем 1 мкл, хранение матрицы микрокристаллизаций при условиях, пригодных для формирования молекулярных кристаллов в каплях, находящихся в этой матрице, и детектирование формирования молекулярных кристаллов в каплях. 2. Способ по п.1, где молекула представляет собой макромолекулу. 3. Способ по п.1, где молекула представляет собой белок. 4. Способ по п.1, где макромолекула имеет молекулярную массу, по меньшей мере, 500 Дальтон. 5. Способ по п.1, где капля имеет объем меньший, чем около 750 нл. 6. Способ по п.1, где капля имеет объем меньший, чем около 500 нл. 7. Способ по п.1, где капля имеет объем меньший, чем около ...

МИКРОФЛЮИДНОЕ УСТРОЙСТВО ДЛЯ КРИСТАЛЛИЗАЦИИ БЕЛКОВ В УСЛОВИЯХ НЕВЕСОМОСТИ

... 1. Микрофлюидное устройство для кристаллизации белков в условиях невесомости, содержащее емкости с растворами различных белков и осадителей, попарно подключенные через отдельные каналы, в которых установлены микрозатворы, к кристаллизационным камерам, отличающееся тем, что названные каналы подключены к одному трубчатому элементу, внутри которого формируют отдельные кристаллизационные камеры для каждого из белков, один конец трубчатого элемента соединен через микрозатвор с микронасосом, подающим из резервуара в полость трубчатого элемента рабочую среду, служащую для разделения полостей кристаллизационных камер, а другой конец трубчатого элемента соединен со сборником рабочей среды, причем для подачи растворов белков и осадителей через отдельные каналы в кристаллизационные камеры применяют отдельные микронасосы, функционирующие по индивидуальным программам.2. Микрофлюидное устройство по п.1, отличающееся тем, что в качестве рабочей среды, применяющейся для разделения кристаллизационных камер ...

Способ получения затравочной пластины

СПОСОБ УСКОРЕННОГО ВЫРАЩИВАНИЯ КРИСТАЛЛОВ С ПРИМЕНЕНИЕМ СТРУКТУРИРОВАННОГО ИЗЛУЧЕНИЯ

Способ ускоренного выращивания кристаллов с применением структурированного лазерного излучения, включающий энергетическое воздействие, отличающийся тем, что для понижения активационного барьера процесса кристаллизации используется направленное структурированное энергетическое воздействие на частоту прецессии электронов, распределение электрических и магнитных полей в ионах раствора посредством структурированного, при прохождении через задающий кристалл лазерного излучения.

Прием выполнения динамического способа выращивания монокристаллов

Способ получения монокристаллов

Использование: получение органических монокристаллов для оптики, электроники , пьезотехники. Сущность изобретения: кристаллы выращивают из насыщенного раствора на затравку, которую регенерируют путем колебания температуры вблизи температуры насыщения с уменьшением колебаний до этой температуры. Даны режимы для получения кристаллов п.п1 -диоксидифенилсульфона и п-нитро-п -метилбензалиденанилина. 2 з.п.ф-лы, 2 ил.

Способ получения кристаллов водорастворимых соединений

Изобретение относится к выращиванию кристаллов водорастворимых соединений, может быть использовано для получения визуально однородных нерасщепленных кристаллов и обеспечивает повышение выхода кристаллов без макродефектов за счет снижения частоты образования расщепленных кристаллов. Способ включает растворение исходного вещества в воде и нагрев до получения пересыщенного раствора с последующим охлаждением. Перед растворением в воду вводят примеси в виде не менее десяти неорганических соединений при концентрации каждой ионной компоненты примеси 10-4 - 10-5 г на 1 л раствора исходного вещества. Для введения примесей используют водные растворы следующих соединений: COSO4, MGSO4, MNSO4, FEF3, CUSO4, ZNSO4, KAL(SO4)2, KSO3, KCRO4, K3FE(CN)6, KCLO4, KCR(SO4)2 или BACL2, SRCL2, KCNS, RBJO3, CAJ2, NH4BR, CDBR2, CSNO3, LIJO4, KBRO3. Доля расщепленных кристаллов уменьшена с 87 - 73 до 42 - 57%. 2 з.п. ф-лы, 3 табл.

DEVICE FOR CRYSTAL GROWING

SOLUTION FOR PREPARING OF SEMICONDUCTING FILMS ON TIN DIOXIDE-BASE

Способ выращивания кристаллов с периодической структурой

Изобретение относится к технологии выращивания кристаллов, которые могут найти применение в квантовой электронике. Цель изобретения - упростить способ получения и повысить выход кристаллов с периодической структурой. Способ реализуется путем возбуждения в объеме кристаллизуемого раствора или расплава ультразвуковой волны, волновой вектор которой параллелен направлению кристаллизации, при этом поверхности растущего кристалла и источника ультразвука служат стенками резонатора. Условия периодического возникновения стоячей ультразвуковой волны обеспечивает движение поверхности растущего кристалла, которая является отражателем ультразвукового резонатора. 1 ил.

Способ выращивания кристаллов

Устройство для выращивания кристаллов белка

Использование в приборостроении, биохимии , кристаллохимии. Сущность: устройство включает герметичный корпус, блок камер кристаллизации, отделенный от него уплотнительными прокладками с диализной мембраной между ними и соединенный с емкостью для буферного раствора и камерой для солевого раствора, снабженной средством его подачи. Емкость для буферного раствора выполнена в корпусе в виде полости, соединенной через клапаны одностороннего действия с камерой для солевого раствора и с дополнительной камерой-сборником, которые расположены на корпусе и выполнены из эластичного материала . В корпусе и уплотнительных прокладках выполнены каналы, соосные с камерами кристаллизации которые установлены в блоке под корпусом с возможностью герметичного отделения блока камер кристаллизации , а в полости расположен рассекатель потока растворов Средство для подачи солевого раствора выполнено в виде штока, жестко соединенного с гайкой, установленной по резьбе на втулке, внутри которой расположена камера для ...

Шихта для выращивания ферромагнитных монокристаллов

HERSTELLUNGSVERFAHREN VON GESCHICHTETEN UEBERGITTERMATERIALIEN UND VON DIESEN ENTHALTENDEN ELEKTRONISCHEN VORRICHTUNGEN

TEMPERATURSTEUERVORRICHTUNG UND VERFAHREN ZUR TEMPERATURSTEUERUNG

NICHTLINEARES OPTISCHES ELEMENT.

VERFAHREN ZUM ZÜCHTEN VON KRISTALLEN

VERFAHREN ZUM ZUECHTEN VON KRISTALLEN HOHER PERFEKTION AUS KONVEKTIONSFREIER SCHMELZFLUESSIGER SUBSTANZMASSE

NIEDRIG-TEMPERATUR-VERFAHREN ZUR HERSTELLUNG VON GESCHICHTETEN SUPERGITTERMATERIALEN

VERFAHREN ZUR HERSTELLUNG ORGANISCHEN NANORÖHRCHEN, INSBESONDERE AUS LITHOCHOLSÄURE UND IHRE ANWENDUNGEN

BILDUNG KLEINER KRSITALLE

Anorganische Nanokristalle mit einer organischen Beschichtung und deren Vorbereitungsverfahren

Improvements in or relating to the growing of crystals

... In methods of growing crystals wherein seed bodies are immersed in a saturated solution of the material-to-be-crystallized, each seed body is supported by at least two pins which are tightly embedded in, but project from, the seed body so as to form a rigid structure which can be readily mounted in the crystallizing tank. Fig. 4 shows a seed plate 7 of primary ammonium phosphate which has been drilled with at least two holes to receive metal pins 2. The other ends of the pins are inserted into a wooden block 3 which fits in channel 4 in the floor 5 of the crystallizing tank. In Figs. 6 and 7, the wooden block is replaced by a metal clip 11 provided with one or more pairs of holes, either of which pairs p may be frictionally engaged by the pins projecting from the seed plate; and the clip is supported in a sheet-metal channel 14. The crystallizing tank may contain several channels adjustably supported at their ends on a pair ...

Method of growing crystals

... Crystals are grown from seeds immersed in a saturated solution, the temperature of which is not permitted to fluctuate more than 1/100 DEG C. over any desired period of time, by using at least one electrical infra-red radiator disposed outside the solution so as to irradiate into it from above, and electrical or mechanical means controlled by an adjustable thermostat immersed in the solution, which automatically regulates the heat irradiated into the solution. The temperature of the solution may be slowly decreased, continuously or stepwise. The solution is preferably put in a vessel of large cross-section so that it is sufficiently shallow for the lowest layer to absorb infra-red rays. In Fig. 1, a seed 3 is immersed in saturated solution 2 covered with a layer of oil 4. Two infra-red lamps 5 and 6 connected through switch 7 to a source of current 9, are placed above the solution. The lamps are switched on and off by electric-relays 8 and 12 controlled ...

An installation for growing monocrystals from a solution

... 1,136,520. Monocrystals, growth from solution. V. M. GRISHIN, Y. S. GOLUB, J. I. VOITSCHENKO, O. V. PASTUKHOV, M. D. TARKHOV, I. S. REZ, M. F. KOLDOBSKAYA and J. S. GORDEEV. 8 Sept., 1967, No. 41076/67. Heading BIB. In apparatus for growing monocrystals from a seed crystal immersed in a solution by slow evaporation of solvent from the solution, the tank 3 containing the solution is surrounded by a constant temperature jacket 2, solvent vapours condense in the upper part of the tank, the condensate collects in an annular channel and continuously flows out through pipe 11 into cylinder 15 the volume of which is gradually increased by slow downward movement of piston 16. The movement of the piston is effected by cam gear 17 driven by electro-magnet 18, the speed of the downstroke being controlled by program setting device 8. When the cam 17 has performed one revolution, the piston reaches its lowest position and opens hole 22, through which the condensate flows into tank 23, while the piston ...

Process for the production of very pure iron monocrystals

... 1,146,744. Electro-depositing iron. DEUTSCHE AKADEMIE DER WISSENSCHAFTEN ZU BERLIN and INSTITUT FIZICESKOJ CHIMII AKADEMII NAUK SSSR. July 8, 1966, No.30810/66. Heading C7B. Pure iron monocrystals are produced by electro-deposition from an aqueous acid solution containing between 10 and 400 g/1 Fe and of pH between 0À5 and 6, at a bath temperature between 20 and 320‹ C. and current density between 0À05 and 400 A/dm2, using a pure iron anode and an electrolytic cell made from or clad with a synthetic resin e.g. P. T. F. E, or a metal resistant to the electrolyte used e.g. Fe or Pt. The cell may be constructed as or housed in an autoclave for operation above 100‹ C. using inert gas to the neccessary pressure. The anode may be in the form of a ring and made from electrolytic and/or sintered carbonyl iron. The cathode may be iron monocrystals (for epitactic deposition) or polycrystalline Fe or Pt. The electrolyte may be made by dissolving pure Fe or a purified ferrous salt.

PROCESS FOR PRODUCING SINGLE CRYSTALS OF OPTICAL CALCITE

Anatase titanium dioxide

Anatase titanium dioxide which has been milled to form a product with a high single crystal fraction, has an average crystal size greater than 0.20 micrometres and an average particle size less than 0.28 micrometres.

Deposition of dielectric material in surface trench of silicon/silica substrate

A process of depositing dielectric material on the inside surface of a trench in a silicon or silica substrate comprising providing a precursor solution, forming the solution into droplets and contacting the droplets with the substrate such that the precursor is deposited in the trench. The droplets may have a diameter of not more than 4 žm, the thickness of dielectric material deposited may be not more than 160 nm, the solvent used may be non-aqueous such as octane or toluene, the deposition may take place at below atmospheric pressure and at ambient temperature. The dielectric material may be barium titanate, lead zirconate titanate, strontium bismuth tantalate, antimony sulfide iodide, barium strontium titanate, titanium dioxide and strontium titanate. The substrate may be UV irradiated during deposition. The deposited material may be heat annealed. The process can be used in the production of a silicon or silica microelectronic device, preferably a silicon or silica random access memory ...

Novel crystalline metal oxide and process for production thereof

A crystalline metal oxide in the form of a solid solution comprising an oxide of a metal of Group II of the periodic table, titanium oxide and silicon dioxide as main components and having main peaks at about 26.7 DEG and about 20.9 DEG in its Cu-K alpha X-ray diffraction pattern (2 theta ) and a specific refractive index. The crystalline metal oxide is produced, for example, by dissolving a compound of a metal of Group II of the periodic table, a hydrolyzable organic silicon compound and a hydrolyzable titanium compound in an organic solvent, hydrolyzing said starting compounds in said solution or after said solution is added to a separately prepared solvent incapable of dissolving the reaction product, thereby to form a sol- or gel-like product, and thereafter calcining the sol- or gel-like product at a temperature and for a period of time sufficient to crystallize said product.

Method

Deposition of layers on substrates

Method and apparatus for growing quartz

Quartz seed crystals are obtained by dividing a quartz Y-bar slab into at least two seed bodies elongated in the direction of their Y crystal axes and each having at least two pairs of opposed parallel major longitudinal surfaces disposing the seed bodies with opposite ends overlapping, cutting through the overlapped ends at an angle inclined to one of the pairs of major longitudinal surfaces, re-disposing the seed bodies in end-to-end relation, aligning the atomic planes of the seed bodies by alignment of the major longitudinal surfaces in common planes and uniting the seed bodies by subjecting them to crystal growth. A slab of quartz 10 (Fig. 1), elongated in the direction of the Y crystal axis, is divided by two cuts along planes a and b, and then by three cuts along planes c, to give two seed bodies 20 and 22 (Fig. 3), which are placed with their ends overlapping, their original relative orientation about the crystal axes ...

Quartz crystal

Single crystals of alpha quartz containing from 0.05 to 1 per cent by weight of germanium dioxide, are grown on quartz seed crystals in a autoclave containing small pieces of quartz supply material, an aqueous solution of sodium hydroxide, and germanium dioxide. The autoclave is heated so that a temperature of 345 DEG to 350 DEG C. is maintained in the neighbourhood of the seeds, and a temperature 35 DEG to 40 DEG C. higher in the neighbourhood of the supply material. The pressure is 5000 to 6000 p.s.i. and the crystals are grown for 2 1/2 months. Piezoelectric resonator plates are cut from the crystals in such a manner that the normals to the major surfaces of the plates lie in crystallographic YZ planes of the crystalline material and make angles of 34 DEG to 36 DEG 301 with the Y axes. Specifications 761,531 and 761,643 are referred to.

Copper monocrystal and its method of preparation.

Method and device for producing secondary seeds

A device, or a method, for producing secondary seeds for the growth of single crystals from hydrothermal growth solutions has a growth container 10 which is intended to hold the hydrothermal growth solution 11 and into which at least two covers 12, 13 optionally fastened to a holder 14 dip. Those crystal surfaces of a primary seed 1 which have a higher growth rate than other crystal surfaces of the primary seed 1 are therefore covered from the adjacent growth solution, the covers 12, 13 projecting beyond the edge of the covered crystal surfaces. It is in this way possible to control the shape and size of the secondary seeds needed for the actual crystal growth. ...

PROCEDURE FOR THE EXTRACTION OF WATER-PURE FROM PIEZOELECTRIC CRYSTAL ELEMENTS AND A DEVICE FOR THE EXECUTION OF THE PROCEDURE

During the growth of piezoelectric crystal elements, the crystal elements inevitably have a water content which is disruptive for many applications. To subsequently extract these traces of water, it is proposed for the piezoelectric crystal elements to be brought into contact with a water-removing solution until the desired degree of extraction has been reached.

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

VORGEFÜLLTE CRYSTALLIZATION CARRIER AS WELL AS THEIR PRODUCTION AND USE

PROCEDURE FOR THE ZUECHTEN FROM CRYSTALS, IN PARTICULAR SINGLE CRYSTALS AS WELL AS DEVICE TO THE EXECUTION OF THE PROCEDURE

INORGANIC NANO-CRYSTALS WITH AN ORGANIC COATING AND THEIR PREPARATION PROCEDURES

PROCEDURE FOR THE CONTROLLING OF THE TREATMENT OF A CRYSTAL WITH A LIQUID

PROCEDURE FOR THE CRYSTALLIZATION USING HYDRODYNAMIC CAVITATION

SUBSTRATE FOR EPITAXY

PROCEDURE AND DEVICE FOR THE GRÖSSSENABHÄNGIGEN SEPARATION FROM MIKROUND NANO-PARTICLES

DEVICE FOR PROTEIN CRYSTALLIZATION

PROCEDURE FOR THE PRODUCTION OF LUMINESZIERENDEN NANO-CRYSTALS

PROCEDURE FOR THE PRODUCTION OF SILVER II-OXIDE FUR GALVANIC ELEMENTS

HYDROTHERMALZUCHTVERFAHREN TO BREEDING LARGE CRYSTALS OR CRYSTAL LAYERS FROM A METAL ORTHOPHOSPHATE USING A GERM PLATE

PROCEDURE FOR BREEDING SINGLE CRYSTALS

PROCEDURE FOR THE PRODUCTION OF CRYSTALS

PIEZOELECTRIC CRYSTAL ELEMENT AND PROCEDURE FOR THE PRODUCTION

MULTI-LEVEL RECRYSTALLIZATION FOR CLEANING CRYSTALLIZABLE MATERIALS

CRYSTALLIZER WITH REDUCED INCRUSTATION.

PROCEDURE FOR HYDRAULICTHERMAL BREEDING FROM CRYSTALS MEANS SEED CRYSTALS COMPOSITION SHEETS

PROTECTED ACTIVATOR, IN ORDER TO INTRODUCE THE CRYSTALLIZATION CONTROLLABLE.

PROCEDURE FOR ZUECHTUNG A LARGE SINGLE CRYSTAL FROM REPEATED KEIMKRISTALLEN.

REACTION CONTAINER FOR THE PRODUCTION OF SAMPLES

PROCEDURE AND DEVICE FOR THE PREPARATION OF LIPIDI MESOPHASER MATERIALS

CRYSTALLIZABLE COMPOSITIONS, THE ONE COMPLEX OF PROTEASE DOMAIN NS3 AND NS4A FROM THAT HEPATITIS C VIRUS CONTAINING, AND THEREBY MADE AVAILABLE CRYSTALS

FILMODER LAYER SEPARATION AND POWDER PRODUCTION

PROCEDURE FOR THE PRODUCTION OF SCHICHTIGEN SUPERCLATTICE MATERIALS.

PROCEDURE FOR THE IDENTIFICATION OF ACTIVE SUBSTANCES AGAINST HCV BY USE OF STRUCTURAL COORDINATES THE HEPATITIS C VIRUSPROTEASE ONES

USE OF SCHICHTIGEM OVER LATTICE MATERIAL

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

MESOPORÖSES GLASS AS NUKLEIERUNGSMITTEL FOR MACROMOLECULE CRYSTALLIZATION

Aggrecanase structure

Semiconductor nanocrystal heterostructures

Method and apparatus for preparing lipidic mesophase material

Microfluidic protein crystallography

COLUMNAR STRUCTURED MATERIAL, ELECTRODE HAVING COLUMNAR STRUCTURED MATERIAL, AND PRODUCTION METHOD THEREFOR

Method for the crystallization of biological macromolecules using electrophoresis gels

Crystal structure of CRIg and C3b: CRIg complex

Crystal forming devices and systems and methods for making and using the same

A microfluidic system, comprising: a receiving station, the receiving station adapted to receive a microfluidic device having a plurality of 5 chambers, the microfluidic device coupled to a carrier, with at least some of the plurality of chambers coupled to a plurality of inlets in the carrier; an interface plate adapted to engage at least one of the inlets in the carrier; 10 a fluid source coupled to the interface plate and adapted to provide pressurized fluid to at least one of the inlets in the carrier; and a controller coupled to the fluid source and to the interface plate for directing fluid from the fluid source 1 to the carrier. 23891131 (GHMatters) 26108/10 ...

Crystalline modification iii of n-(4-(5-dimethylamino-naphthaline-1-sulfonylamino)-phenyl)-3-hydroxy-2,2-dimethyl-propionamide

Controlled Fabrication of Semiconductor-Metal Hybrid Nano-Heterostructures via Site-Selective Metal Photodeposition

A method of synthesizing colloidal semiconductor-metal hybrid heterostructures is disclosed. The method includes dissolving semiconductor nanorods in a solvent to form a nanorod solution, and adding a precursor solution to the nanorod solution. The precursor solution contains a metal. The method further includes illuminating the combined precursor and nanorod solutions with light of a specific wavelength. The illumination causes the deposition of the metal in the precursor solution onto the surface of the semiconductor nanorods. 1. A method of synthesizing colloidal semiconductor-metal hybrid heterostructures , the method comprising:dissolving semiconductor nanorods in a solvent to form a nanorod solution;adding a precursor solution to the nanorod solution, the precursor solution containing a metal;illuminating the combined precursor and nanorod solutions with light of a specific wavelength, the illumination causing deposition of the metal in the precursor solution onto a surface of the semiconductor nanorods.2. The method of claim 1 , wherein each of the semiconductor nanorods has an axially anisotropic morphology.3. The method of claim 2 , wherein each of the semiconductor nanorods is oblong having a relatively thick first end that tapers to a relatively thin second end.4. The method of claim 3 , wherein the specific wavelength of the light determines on which end a majority of the metal is deposited.5. The method of claim 4 , wherein the specific wavelength of the light ranges from 350 nanometers to 575 nanometers.6. The method of claim 1 , wherein the metal comprises palladium.7. The method of wherein the precursor solution comprises cis-dimethyl(N claim 6 ,N claim 6 ,N′ claim 6 ,N′-tetramethylenediamine) palladium(II).8. The method of claim 1 , wherein the metal comprises platinum.9. The method of wherein the precursor solution comprises dimethyl (1 claim 8 ,5-cyclooctadiene) platinum (II).10. The method of claim 1 , wherein the semiconductor nanorods comprise ...

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

PHOTOREFRACTIVE COMPOSITION AND DEVICE COMPRISING THE COMPOSITION

A photorefractive composition and a photorefractive device comprising the composition are disclosed. The composition is configured to be photorefractive upon irradiation by a laser having a wavelength in the visible light spectrum and comprises a polymer, a non linear optical chromophore, and a plasticizer. In an embodiment, the percentage of polymer recurring units that comprise a charge transport moiety is less than 30%. In an embodiment, the polymer is selected from the group consisting of polycarbonate, polyurea, polyurethane, poly(meth)acrylate, polyester, polyimide, and combinations thereof. Preferably, the composition has a diffraction efficiency of about 30% or greater upon irradiation with a visible light laser. 2. The photorefractive composition of claim 1 , wherein the polymer is substantially free of charge transport moieties represented by the formulae (Ia) claim 1 , (Ib) claim 1 , and (Ic).3. The photorefractive composition of claim 1 , wherein the percentage of polymer recurring units that comprise a charge transport moiety is less than 20%.4. The photorefractive composition of claim 3 , wherein the polymer is substantially free of any charge transport moieties.6. The photorefractive composition of claim 5 , wherein the polymer is substantially free of non-linear optical moieties represented by the formula (IIa).7. The photorefractive composition of claim 5 , wherein the percentage of polymer recurring units that comprise a non-linear optical moiety is less than 20%.8. The photorefractive composition of claim 7 , wherein the polymer is substantially free of any non-linear optical moieties.9. The photorefractive composition of claim 1 , wherein the polymer is selected from the group consisting of polycarbonate claim 1 , polyurea claim 1 , polyurethane claim 1 , polyacrylate claim 1 , polymethacrylate claim 1 , polyester claim 1 , polyimide claim 1 , and combinations thereof.10. The photorefractive composition of claim 9 , wherein the polymer is ...

METHOD AND SUBSTRATES FOR FORMING CRYSTALS

A structured substrate is described which is suitable for forming and hosting a crystal array, as well as associated methods for making and using such a structured substrate. The structured substrate is made by injection molding and has on one side a combination of macro- and micro-structured features. Each macro-structured feature comprises an edge that forms a perimeter around an enclosed area containing a large number of the micro-structured features. When a droplet of a solution containing molecules of interest and a solvent is deposited onto one of the enclosed areas such that it extends somewhat beyond the perimeter, the droplet slowly dries and shrinks through evaporation of the solvent, during which the edge acts to seed crystallization of the molecules, and the micro-structured features act to direct crystal growth from the seed into the enclosed area. The crystal thus forms over the whole of the enclosed area in a shape that conforms to the perimeter. Crystals of a desired size and shape can therefore be formed. 1. A method of forming a crystal array on a structured substrate comprising:providing a structured substrate having on one side a combination of macro-structured features and micro-structured features, each macro-structured feature comprising an edge that forms a perimeter around an enclosed area containing a large number of the micro-structured features;depositing on one of the enclosed areas a droplet of a solution containing molecules of interest and a solvent, wherein the volume of the solution deposited is controlled to ensure the droplet initially overfills the enclosed area to extend laterally beyond the perimeter onto adjacent surface portions;forming a crystal substantially confined to the enclosed area by allowing the droplet to dry and shrink through evaporation of the solvent, during which the edge acts to seed crystallization of the molecules at one or more locations on the perimeter and the micro-structured features act to direct ...

ONE-STEP IN SITU SOLUTION GROWTH FOR LEAD HALIDE PEROVSKITE

A method of forming lead halide perovskite crystals in a solvent. The perovskite is form by solution processing of an organic and inorganic precursor in a polar protic solvent. 1. A method of forming a lead halide perovskite comprising:dissolving an organic halide precursor in a polar protic solvent;dissolving an lead halide precursor in the solvent to form a reaction solution;reacting the organic halide precursor and the lead halide precursor at a reaction temperature of the solvent's boiling point; andforming lead halide perovskite crystals.2. The method of claim 1 , wherein the organic halide precursor is selected from methylammonium chloride claim 1 , methylammonium iodide claim 1 , and methylammonium bromide.3. The method of claim 1 , wherein the lead halide precursor is selected from lead chloride claim 1 , lead iodide claim 1 , and lead bromide.4. The method of wherein the organic halide precursor and the lead halide precursor each comprise an identical halide.5. The method of claim 1 , wherein the organic halide precursor and the lead halide precursor are present in substantially a 1:1 molar ratio in the solvent prior to reacting.6. The method of claim 1 , wherein the polar protic solvent is an alcohol.7. The method of claim 1 , further comprising evaporating the solvent after formation of lead halide perovskite crystals.8. The method of claim 7 , wherein the evaporation is in an inert environment.9. The method of claim 1 , wherein within 20%+/−of the boiling point comprises at the boiling point.10. The method of claim 1 , wherein the reaction solvent has a concentration of organic precursor plus inorganic precursor of at least 40 wt %.11. A method of forming a perovskite comprising:dissolving an organic halide precursor in an alcohol solvent;dissolving an lead halide precursor in the alcohol solvent;forming a reaction solution having a concentration of dissolved organic halide precursor plus dissolved lead halide precursor of at least 40 wt % and the ...

SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site. 1. An optoelectronic device , comprising:a substrate comprising epitaxial layers of a group III-Nitride semiconductor;an epitaxial seed layer formed on the substrate, the seed layer comprising an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, and the seed layer being substantially free of organic compounds;an epitaxial bulk layer formed on the seed layer.2. The optoelectronic device of claim 1 , wherein the seed layer has a thickness of from about 2 nm to about 20 nm.3. The optoelectronic device of claim 1 , wherein the seed layer covers only a selected portion of the surface of the substrate claim 1 , and the bulk layer is disposed only on the selected portion.4. The optoelectronic device of claim 1 , wherein the seed layer is a ZnO seed layer and includes at least one additional element selected from the group of Li claim 1 , Na claim 1 , Be claim 1 , Mg claim 1 , Ti claim 1 , Zr claim 1 , Hf claim 1 , Cr claim 1 , Mo claim 1 , W claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , Cu claim 1 , Cd claim 1 , Al claim 1 , Ga claim 1 , In claim 1 , Si claim 1 , Ge claim 1 , Sn claim 1 , P claim 1 , As claim 1 , S claim 1 , Se claim 1 , and F.5. The optoelectronic device of claim 4 , wherein the bulk layer comprises ZnO.6. The optoelectronic device of claim 1 , wherein the bulk layer comprises an oxide of second metal ...

NON-LINEAR OPTICAL MATERIAL AND NON-LINEAR OPTICAL ELEMENT USING SAME

There is provided an organic non-linear optical material containing a compound represented by the Formula (I), and the Formula (I) is defined as herein, and a polymer binder: 2. The organic non-linear optical material according to claim 1 ,{'sub': '1', 'wherein Arepresents a phenylene group, a naphthylene group, a divalent thiophene ring (thienylene group), a divalent pyrrole ring, or a divalent furan ring.'}4. The organic non-linear optical material according to claim 1 ,{'sub': '2', 'wherein in Formula (I), Arepresents a substituted or unsubstituted phenylene group, a substituted or unsubstituted thienylene group, a substituted or unsubstituted divalent pyrrole ring, or a substituted or unsubstituted divalent thiazole ring.'}5. The organic non-linear optical material according to claim 1 ,wherein in Formula (I), R has 3 to 30 carbon atoms and represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthio group, a substituted or unsubstituted arylthio group, or a substituted or unsubstituted acylamino group.6. An optical element comprising the organic non-linear optical material according to .7. An optical modulator comprising the organic non-linear optical material according to . This is a continuation of International Application No. PCT/JP2014/061784 filed on Apr. 25, 2014, and claims priority from Japanese Patent Application No. 2013-099567 filed on May 9, 2013, the entire disclosures of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to an organic non-linear optical material which is preferably used for a non-linear optical element, the non-linear optical element being useful in the fields of optoelectronics and photonics to which an optical modulator, an optical switch, an optical integrated circuit, an optical computer, an optical memory, a wavelength conversion element, a hologram ...

EPITAXY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (Å) and 500 angstroms. 1. An epitaxy substrate , comprising:a silicon substrate, having a first surface and a second surface opposite to each other, wherein the first surface is an epitaxy surface; anda silicon carbide layer, located in the silicon substrate, wherein a distance between the silicon carbide layer and the first surface is between 100 angstroms and 500 angstroms.2. The epitaxy substrate as claimed in claim 1 , wherein the first surface of the silicon substrate has a single crystalline structure.3. The epitaxy substrate as claimed in claim 1 , wherein a thickness of the silicon carbide layer is between 100 angstroms and 4 claim 1 ,000 angstroms.4. The epitaxy substrate as claimed in claim 1 , wherein a surface roughness of the first surface of the silicon substrate is between 0.1 nm and 0.3 nm.5. The epitaxy substrate as claimed in claim 1 , wherein the silicon carbide layer is a single-layered structure or a multi-layered structure.6. The epitaxy substrate as claimed in claim 5 , wherein the multi-layered structure comprises a first layer and a second layer claim 5 , and the first layer is located between the second layer and the first surface.7. The epitaxy substrate as claimed in claim 6 , wherein the first layer is in contact with the second layer directly.8. The epitaxy substrate as claimed in claim 6 , wherein the first layer is not in contact with the second layer directly.9. The epitaxy substrate as claimed in claim 8 , wherein a distance between the first layer and the second layer is between 100 angstroms ...

COMPOSITION, ELECTRO-OPTIC MATERIAL, AND METHOD FOR PREPARING ELECTRO-OPTIC MATERIAL

A composition for preparing a nonlinear optic material including an organic chromophore that is polarized by an electric field, a precursor that can form an inorganic material polymer by a sol-gel reaction, and a compatibilizer that can bind to both the organic chromophore and the inorganic material polymer, wherein the organic chromophore includes a functional group at a terminal end that can bind to both the inorganic material polymer and the compatibilizer, a nonlinear optic material prepared from the composition, a method of preparing the nonlinear optic material, and an electro-optic device including the nonlinear optic material are disclosed. 1. A composition for preparing a nonlinear optic material , comprisingan organic chromophore that is polarized by an electric field,a precursor that can form an inorganic material polymer by a sol-gel reaction, anda compatibilizer that can bind to both the organic chromophore and the inorganic material polymer,wherein the organic chromophore comprises a functional group at a terminal end that can bind to both the inorganic material polymer and the compatibilizer.3. The composition of claim 2 , wherein the organic chromophore is represented by at least one of Chemical Formulas 1-1 claim 2 , 1-4 claim 2 , and 1-5 claim 2 , and{'sup': 1', '2', '1', '1, 'sub': '2', 'in Chemical Formulas 1-1, 1-4, and 1-5, Xand Xare independently a C1 to C10 alkyl group substituted or unsubstituted with —NO, —CN, or a sulfone group, a halogen, or a C1 to C10 haloalkyl group, Ais N, and Ris a substituted or unsubstituted C1 to C10 alkyl group.'}4. The composition of claim 1 , wherein the precursor of the inorganic material polymer is represented by Chemical Formula 2:{'br': None, 'sup': a', 'b', 'c', 'd, 'sub': m', 'n', 'l', '4-m-n-l, '(R)(R)(R)-M-(OR)\u2003\u2003Chemical Formula 2'}wherein, in Chemical Formula 2,{'sup': a', 'b', 'c', 'd, 'R, R, R, and Rare independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a ...

SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL INGOT AND SILICON CARBIDE WAFER

A silicon carbide crystal ingot includes first crystal layers and second crystal layers, each being alternately disposed and all containing one of a donor and acceptor, wherein a concentration of the donor or the acceptor that at least one of the second crystal layers has is higher than a concentration of the donor or the acceptor that one of the first crystal layers has, the one of the first crystal layers being in contact with the at least one of the second crystal layers. 1. A silicon carbide crystal ingot , comprising:first crystal layers and second crystal layers, each being alternately disposed and all containing one of a donor and an acceptor,wherein a concentration of the donor or the acceptor that at least one of the second crystal layers has is higher than a concentration of the donor or the acceptor that one of the first crystal layers has, the one of the first crystal layers being in contact with the at least one of the second crystal layers.2. The silicon carbide crystal ingot according to claim 1 , further comprising at least one concentration gradient portion in which concentrations of the donor or the acceptor of the first crystal layers and the second crystal layers are increasing in a crystal growth direction.3. The silicon carbide crystal ingot according to claim 2 , wherein the at least one concentration gradient portion comprises two or more concentration gradient portions which are continuous in the crystal growth direction.4. The silicon carbide crystal ingot according to claim 3 , wherein the silicon carbide crystal ingot has a diameter that is increasing in the crystal growth direction claim 3 ,wherein the silicon carbide crystal ingot further comprises a middle portion and a peripheral portion that is around the middle portion, andwherein the first crystal layers and the second crystal layers in the peripheral portion are inclined to the crystal growth direction in the middle portion of the silicon carbide crystal ingot.5. The silicon ...

NON-LINEAR OPTICAL CRYSTAL AND METHOD FOR MANUFACTURING SAME, AND TERAHERTZ-WAVE GENERATOR AND TERAHERTZ-WAVE MEASURING APPARATUS

Disclosed is a non-linear optical crystal containing pyridinium represented by the following Formula (1), 4-substituted phenylsulfonate represented by the following Formula (2a), and 2,4,6-substituted phenylsulfonate represented by the following Formula (2b). 2. The non-linear optical crystal according to claim 1 , wherein R claim 1 , R claim 1 , and Rin Formula (1) each are a methyl group claim 1 , X in Formula (2a) is a chlorine atom claim 1 , and R claim 1 , R claim 1 , and Rin Formula (2b) each are a methyl group.3. A method for manufacturing the non-linear optical crystal according to claim 1 , the method comprising:precipitating the non-linear optical crystal from a solution containing the pyridinium, the 4-substituted phenylsulfonate, the 2,4,6-substituted phenylsulfonate, and a solvent in which the pyridinium, the 4-substituted phenylsulfonate, and the 2,4,6-substituted phenylsulfonate are dissolved.4. A terahertz-wave generator comprising a terahertz-wave generating element including the non-linear optical crystal according to .5. A terahertz-wave measuring apparatus comprising a terahertz-wave generating element including the non-linear optical crystal according to .6. A terahertz-wave measuring apparatus comprising a terahertz-wave detecting element including the non-linear optical crystal according to .7. A method for manufacturing the non-linear optical crystal according to claim 2 , the method comprising:precipitating the non-linear optical crystal from a solution containing the pyridinium, the 4-substituted phenylsulfonate, the 2,4,6-substituted phenylsulfonate, and a solvent in which the pyridinium, the 4-substituted phenylsulfonate, and the 2,4,6-substituted phenylsulfonate are dissolved.8. A terahertz-wave generator comprising a terahertz-wave generating element including the non-linear optical crystal according to .9. A terahertz-wave measuring apparatus comprising a terahertz-wave generating element including the non-linear optical crystal ...

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

COMPOSITION, ELECTRO-OPTIC MATERIAL, ELECTRO-OPTIC DEVICE, AND METHOD FOR PREPARING ELECTRO-OPTIC MATERIAL

A composition for preparing an electro-optic material including a first polyimide having a high molecular weight, and a second polyimide having a lower molecular weight and including a structural unit including a chromophore functional group in the side chain, an electro-optic material including the composition, an electro-optic device including the electro-optic material, and a method of preparing the electro-optic material. 1. A composition for preparing an electro-optic material , the composition comprisinga first polyimide having a high molecular weight, and a second polyimide having a lower molecular weight that includes a structural unit comprising a chromophore functional group in the side chain.2. The composition of claim 1 , wherein the first polyimide has a weight average molecular weight of greater than or equal to about 100 claim 1 ,000 grams per mole claim 1 , and the second polyimide has a weight average molecular weight of less than or equal to about 50 claim 1 ,000 grams per mole.3. The composition of claim 1 , wherein a content of the structural unit comprising the chromophore functional group in the side chain is less than about 50 weight percent based on a total weight of the first polyimide and the second polyimide.4. The composition of claim 1 , wherein a content of the structural unit comprising the chromophore functional group in the side chain is about 1 weight percent to about 30 weight percent based on a total weight of the first polyimide and the second polyimide.5. The composition of claim 1 , wherein the first polyimide and the second polyimide are included in a weight ratio of about 99:1 to about 50:50.8. The composition of claim 6 , wherein Eof Chemical Formula 1 and A of Chemical Formula 2 are independently a substituted or unsubstituted C6 to C30 aromatic single ring claim 6 , a C10 to C30 condensed ring in which at least two substituted or unsubstituted aromatic rings are fused claim 6 , or at least two aromatic rings of the single ...

超高純度強誘電体薄膜

一种磷酸胍紫外倍频晶体材料及其制备与应用

本发明涉及一种磷酸胍紫外倍频晶体材料及其制备与应用，该磷酸胍材料的化学式为[C(NH 2 ) 3 ] 6 (PO 4 ) 2 ·3H 2 O，属于单斜晶系，其空间群为Cc，磷酸胍材料的晶胞参数为 β＝91.90～92.20°，α＝γ＝90°，Z＝4。与现有材料相比，本发明的磷酸胍材料具有较大的倍频效应，在1064nm激光照射下，粉末倍频强度约为KH 2 PO 4 (KDP)晶体的3.8倍；在532nm激光照射下测得粉末倍频效应强度约为β‑BaB 2 O 4 晶体的0.3倍。此外，该材料的紫外吸收截止边在205nm处，在激光频率转换、光电调制、激光信号全息储存等领域具有广泛的应用前景。

模板型衬底及其制造方法

一种用于光电或电气器件的模板型衬底，其包括A)含有至少一种碱金属元素(I族，IUPAC 1989)的块状单晶氮化物层和B)通过气相外延生长来生长的氮化物层，其中层A)与层B)结合在层A)的非N极性面与层B)的N极性面处。因此，所述模板型衬底具有良好的位错密度和来自(0002)平面的X射线摇摆曲线的小于80的良好FWHM值，从而所得的模板型衬底非常适用于从气相外延衬底，如MOCVD、MBE与HVPE，从而可以制作良好的光电器件如激光二极管和大输出的LED以及良好的电气器件如MOSFET。

Deposition of highly-oriented PTFE films and uses therefor

Sol-gal process prepares the Bi2212 superconducting thin films of (00l) direction extension

本发明涉及溶胶凝胶法制备(00l)方向外延的Bi2212超导薄膜，以金属硝酸盐为原料，乙二胺四乙酸为络合剂，羟乙基纤维素为表面活性剂，以SrTiO 3 (100)或MgO(100)为基底，利用溶胶凝胶法制备高纯度、低表面粗糙度的(00l)方向外延的Bi2212超导薄膜。本发明方法制备的Bi2212超导薄膜具有较高相纯度、较小表面粗糙度，无孔洞，结构致密，原料化学计量比可精确控制，膜厚度和成分均匀，而且制备工艺简单，重复性好，生产设备少，效率高，成本低，可实现大规模的工业化生产。

Layer by layer self-assembly of large response molecular electro-optic materials by a desilylation strategy

The preparation of robust, thin film materials with large second-order optical nonlinearities through the covalent self-assembly of chromophoric compositions and innovative use of silyl chemistry.

Layer by layer self-assembly of large response molecular electro-optic materials by a desilylation strategy

The preparation of robust, thin film materials with large second-order optical nonlinearities through the covalent self-assembly of chromophoric compositions and innovative use of silyl chemistry.

One-dimensional, two-dimensional and three-dimensional self-organized structures of fluorescent semiconductor nanocrystals and method for preparing and using said structures

The invention concerns one-dimensional, two-dimensional and three-dimensional self-organized fluorescent semiconductor structures of semiconductor nanocrystals and nanocrystal clusters, in particular having a three-dimensional dendrite, one-dimensional thread or two-dimensional network shape with hexagonal meshes, their use as fluorescent substrates in systems for detecting biological substances, sources, detectors or receivers of polarized light, light transferring and collecting systems, as well as methods for preparing such structures.

ONE-DIMENSIONAL, TWO-DIMENSIONAL AND THREE-DIMENSIONAL SELF-ORGANIZED STRUCTURES OF FLUORESCENT SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARING AND USING SAME

Structures autoorganisées semi-conductrices fluorescentes unidimensionnelles, bidimensionnelles et tridimensionnelles de nanocristaux semi-conducteurs et de grappes de nanocristaux, en particulier ayant une forme de dendrite tridimensionnelle, de fil unidimensionnel ou de réseau bidimensionnel à mailles hexagonales, leur utilisation en tant que substrats fluorescents dans des systèmes de détection de substances biologiques, sources, détecteurs ou récepteurs de lumière polarisée, systèmes de transfert et de collecte de la lumière, ainsi que procédés de préparation de telles structures.

Superconductor methods and reactors

초전도체 반응기, 방법 및 시스템이 개시된다. A superconductor reactor, method and system are disclosed. 초전도체, 반응기  Superconductor, reactor

Nonlinear optical device and manufacturing method thereof

Method of producing substrate standardized with epitaxial layer (template type substrates) from voluminal mono-crystalline nitride containing gallium with surface of high structural quality

Przedmiotem wynalazku jest sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal, znamienny tym, że w autoklawie, w środowisku nadkrytycznego rozpuszczalnika amoniakalnego zawierającego jony metali alkalicznych rozpuszcza się materiał źródłowy zawierający gal i krystalizuje azotek zawierający gal z nadkrytycznego roztworu na powierzchni zarodka z azotku zawierającego gal w temperaturze wyższej i/lub ciśnieniu niższym niż przy rozpuszczaniu materiału źródłowego, uzyskując podłoże typu template o wysokiej jakości powierzchni pod epitaksję z monokrystalicznego objętościowego azotku zawierającego gal, które składa się z warstwy azotku zawierającego gal krystalizowanej z amoniakalnego roztworu nadkrytycznego oraz z warstwy azotu zawierającego gal krystalizowanej z fazy gazowej lub z roztworu w ciekłym metalu lub mieszaninach metali lub z roztworu w stopionych związkach azotowych metali.

Process for the production of iron oxides epitaxially coated with iron oxides for magnetic recording

내용 없음. No content.

Islands-in-sea type photorefractive polymer composite, and photorefractive device and optical device including the same

Provided are an islands-in-sea type photorefractive polymer composite, and a photorefractive device and an optical device including the same. The islands-in-sea type photorefractive polymer composite includes at least a photoconductive polymer matrix, a nonlinear optical chromophore, and a plasticizer, as a sea component, and includes at least a photocharge generator as an island component.

ONE-DIMENSIONAL, TWO-DIMENSIONAL AND THREE-DIMENSIONAL SELF-ORGANIZED STRUCTURES OF FLUORESCENT SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARING AND USING SAME

Patent FR2472201B1

Patent FR2520360B1

ORGANIC COMPOUNDS ACTIVE IN NONLINEAR OPTICS AND ELECTROOPTIC DEVICES CONTAINING SAME

La présente invention concerne des composés organiques actifs en optique non linéaire de formules générales suivantes : (CF DESSIN DANS BOPI) dans lesquelles : D est un groupement donneur d'électrons; A, A1 identiques ou différents sont des groupements accepteurs d'électrons; R1 , R2 , R3 , R4 sont des radicaux alkyles inférieurs ou l'hydrogène. The present invention relates to organic compounds active in nonlinear optics of the following general formulas: (CF DRAWING IN BOPI) in which: D is an electron donor group; Identical or different A, A1 are electron acceptor groups; R1, R2, R3, R4 are lower alkyl radicals or hydrogen.

ORGANIC COMPOUNDS ACTIVE IN NON-LINEAR OPTICS AND ELECTROOPTIC DEVICES CONTAINING THEM

3-METHYL-4-NITROPYRIDINE-1-OXIDE AND 3,5-DIMETHYL-4-NITROPYRIDINE-1-OXIDE CRYSTALS FOR NON-LINEAR OPTICS

L'INVENTION A POUR OBJET DES CRISTAUX DESTINES A L'OPTIQUE NON LINEAIRE. SELON L'INVENTION, CES CRISTAUX SONT FORMES DE MOLECULES 3 ETOU 5-METHYL-4-NITROPYRIDINE-1-OXYDE. APPLICATION A LA CONVERSION DE FREQUENCES OPTIQUES ET A L'ELECTROOPTIQUE. THE OBJECT OF THE INVENTION IS CRYSTALS INTENDED FOR NON-LINEAR OPTICS. ACCORDING TO THE INVENTION, THESE CRYSTALS ARE IN THE FORM OF 3 AND OR 5-METHYL-4-NITROPYRIDINE-1-OXIDE MOLECULES. APPLICATION TO THE CONVERSION OF OPTICAL AND ELECTROOPTICAL FREQUENCIES.

Ultrahigh-purity ferroelectric thin film

Disclosed herein is an ultrahigh-purity ferroelectric thin film of Pb-containing ferroelectric represented by the formula Pb 1-x La x (Zr y Ti 1-y ) 1-x/4 O 3 (where Y is 0 or 1 or a decimal smaller than 1), characterized in that the total content of alkali metal impurities therein is less than 1 ppm, or characterized in that the total content of alkali metal impurities therein is less than 0.1 ppm and the total content of U and Th therein is less than 10 ppb. It will find use as infrared sensor, piezoelectric filter, vibrator, laser modulator, optical shutter, capacitor film, nonvolatile memory, etc. owing to its very low level of leakage current.

Azo dyestuff groups and urethane groups containing polyadduct and its utilization in nonlinear optics

Polyadducts containing azo dyes and urethane groups comprising (a) at least one organic polyisocyanate, (b) at least one diol of a heterocyclic azo dye, and optionally (c) one or more compounds containing at least two NCO-reactive groups and having a mean molecular weight Mn of up to 500 g/mol, and/or (d) one or more polyhydroxyl compounds having mean molecular weights Mn of from 500 to 5000 g/mol. These polyadducts are suitable for applications in non-linear optics.

Patent JPH04981B2

Method for low temperature controllable preparation of zinc oxide nano line and application thereof

本发明公开了一种低温可控制备氧化锌纳米线的方法，其特征在于工艺步骤如下：(a)在衬底上沉积一层氧化锌或者金属锌的薄膜，作为氧化锌纳米线生长过程中的种子层；(b)配制锌盐和胺类表面活性剂的混合溶液作为纳米材料生长过程中的生长液；(c)将沉积有种子层的衬底放入到上述生长溶液中进行纳米线的生长。所述纳米线的生长密度通过调整种子层的厚度来控制，纳米线的生长形貌通过调整生长溶液中锌离子的浓度来控制。本发明同时提供了一种利用上述技术制备集成有控制栅极的氧化锌纳米线的方法。

Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Derivatives of (3-oxoisoindolin-1-ylidine) propandinitrile

Derivatives of (3-oxoisoindolin-1-ylidine)propandinitrile of formula 1: wherein Y1-Y3 are hydrogen or halogen, X1 is, for example, hydrogen or halogen, and X2 is selected from optionally substituted hydroxy, alkoxy, amino, carboxyl, keto, nitro, 4-aminophenyldiazo, 4-aminophenylimino or 4-aminostyryl. The compounds show good heat resistance at a temperature required for manufacturing an opto-electrical device and can minimize light loss in the near infra-red range. The compounds may also be used as intermediates to new compounds having good opto-electrical properties.

Materials with nitrogenous six-membered rings

Nitrogenous compounds with six-membered rings having the formula (I) and polymer materials containing the organic residue of a compound having the formula (I) covalently linked therewith are suitable as non-linear optical media. In the formula (I), D, W, X, Y and Z have the meaning given in the first claim.

3-oxoisoindolin-1-ylidene propanedinitrile derivative and its production

(57)【要約】 【課題】 （３−オキソイソインドリン−１−イリジ ン）プロパンジニトリル誘導体及びその製造方法を提供 する。 【解決手段】 特定構造の（３−オキソイソインドリン −１−イリジン）プロパンジニトリル誘導体であり、特 定構造の１−イミノ−３−オキソイソインドリン誘導体 とＮＣＣＨ ２ ＣＮを０〜２００℃の温度で３０分〜９６ 時間反応させて製造する。 （３−オキソイソインドリン−１−イリジン）プロパン ジニトリル誘導体は安価で製造しやすい。電気光学素子 の製作時要求される工程温度で非常に優れた耐熱性を示 し、分子内のＣ−Ｈ結合の水素原子をハロゲン原子等に 置換えれば近赤外線領域での光損失を最小化させうる。 その結果、電気光学素子の光学材料として非常に有用に 使用しうる。その他、本発明の（３−オキソイソインド リン−１−イリジン）プロパンジニトリル誘導体は光電 子特性及び耐熱性に優れた新たな化合物の合成時中間体 として利用しうる。

Integrated circuit and direct circuit manufacturing method

종래의 실리콘 CMOS 기술과 양립할 수 있는 충전 초격자 DRAM(100)을 제조하기 위한 방법이다. MOSFET(72)는 실리콘 기판(71) 위에 형성된다. 두꺼운 BPSG 층(77D)에 뒤이어 얇은 SOG 층(77E)이 MOSFET(72) 위에 놓인다. 커패시터(80)는 백금층(81)의 침적, 어닐링, 충진초격자재료를 포함하는 중간층(84)의 침적, 어닐링, 제 2 백금층(84)의 침적, 그리고나서 커패시터(8)의 패턴닝으로 형성된다. 다른 SOG층(86)이 침적되고, MOSFET(72)에 대한 콘택구멍(106, 107)과 커패시터(80)들은 부분적으로 개방되고, SOG(86)는 어닐되고, 콘택구멍(106, 107)들은 완전히 개방되고, 그리고 Pt/Ti PtSi 배선층(88, 288)이 침적된다.

Benzimidazole-derivatized azo compounds and polymers derived therefrom for nonlinear optics

A second order nonlinear optically-active azo monomer comprising a benzimidazole moiety. The monomers can be incorporated into both linear and crosslinked polymers useful in electrooptical devices.

Pure inorganic narrow-spectrum blue-violet light emitting two-dimensional perovskite single crystal material and growth method

本发明提供一种纯无机、大尺寸、二维钙钛矿发窄谱蓝紫光单晶材料及其生长方法，该方法利用从溶剂中缓慢降温或挥发溶剂的方法获得大尺寸单晶；其中所述大尺寸二维钙钛矿发光单晶的化学式为CsPb 2 Cl 5 。该单晶为二维晶体结构；发光峰半峰宽窄，发光峰位417nm，半高宽小于18nm，单晶尺寸大。

Integrated circuit with layered superlattice material and method of fabricating same

A method of fabricating a layered superlattice DRAM (100) compatible with conventional silicon CMOS technology. A MOSFET (72) is formed on a silicon substrate (71). A thick layer (77D) of BPSG followed by a thin SOG layer (77E) overlies the MOSFET (72). A capacitor (80) is formed by depositing a layer (81) of platinum, annealing, depositing an intermediate layer (84) comprising a layered superlattice material, annealing, depositing a second layer (84) of platinum, then patterning the capacitor (80). Another SOG layer (86) is deposited, contact holes (106, 107) to the MOSFET (72) and capacitor (80) are partially opened, the SOG (86) is annealed, the contact holes (106, 107) are completely opened, and a Pt/Ti/PtSi wiring layer (88, 288) is deposited.

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

A coating of liquid precursor containing a metal is applied (224) to a first electrode (122, 420), baked (226) on a hot plate in oxygen ambient at a temperature not exceeding 300 °C for five minutes, then RTP annealed (228) at 675 °C for 30 seconds. The coating is then annealed (230) in oxygen or nitrogen ambient at 700 °C for one hour to form a thin film (124, 422) of layered superlattice material with a thickness not exceeding 100 nm. A second electrode (126, 424) is applied to form a capacitor, and a second anneal (234) is performed in oxygen or nitrogen ambient at a temperature not exceeding 700 °C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8 ≤ u ≤ 1.0, 2.0 ≤ v ≤ 2.3, and 1.9 ≤ w ≤ 2.1.

Non-linear optical crystal and method for manufacturing same, and terahertz-wave generator and terahertz-wave measuring apparatus

Disclosed is a nonlinear optical crystal including pyridinium expressed by equation (1) below, 4-substituted phenylsulfonate expressed by equation (2a) below, and 2,4,6-substituted phenylsulfonate expressed by equation (2b) below.

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300° C. for five minutes, then RTP annealed at 675° C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700° C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 100 nm. A second electrode is applied to form a capacitor, and a second anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700° C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8≦u≦1.0, 2.0≦v≦2.3, and 1.9≦w≦2.1.

Non-linear optic process using N-(4-nitrophenyl)-2-(hydroxymethyl)-pyrrolidine and deuterated derivatives thereof

The invention relates to novel paranitroaniline derivatives usable in non-linear optics and electrooptics, as well as to the preparation process for the same. These derivatives are in accordance with formula (I): ##STR1## in which one or more of the hydrogen atoms are optionally replaced by deuterium atoms. They are prepared by reacting one of the two pure optical isomers of 2-(hydroxymethyl)-pyrrolidine with a parahalogenonitrobenzene. The optically pure derivatives can be used in optical or optoelectronic devices.

RPOCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME

금속을 포함하는 애체 프레커스가 층진초격자재료(30)를 형성하기 위해 기판(18)에 도포되고, RTP로 굽히고, 그리고 어닐된다. 훌륭한 전기적 특성을 구하기 위해, 높는 비스무스 함유량 프레커스를 제외하고는, 산소에서 RTP로 기판(18)을 굽고 그리고 어닐하는 것이 필수적이다. 화학량논의 110％와 140％ 사이의 과도비스무스와 750˚C의 RTP온도가 최적이다. 막은 두 층(30A,30B)으로 형성되는데, 제1층은 화학량논적인 프레커스를 사용하고, 제2층은 과도비스무스프레커스를 사용한다.

Method of manufacturing calcium carbonate single crystals

A method of manufacturing calcium carbonate single crystals is such that calcium carbonate is grown by hydrothermal synthesis at a given temperature and pressure using an ammonium nitrate aqueous solution as the solvent.

INTEGRATED CIRCUIT WITH LAYERED SUPERLATTICE MATERIAL AND METHOD OF FABRICATING SAME

종래의 실리콘 CMOS 기술과 양립할 수 있는 층진 초격자 DRAM(100)을 제조하기 위한 방법이다. MOSFET(72)는 실리콘 기판(71)위에 형성된다. 두꺼운 BPSG층(77D)에 뒤이어 얇은 SOG층(77E)이 MOSFET(72) 위에 놓인다. 커패시터(80)은 백금층(81)의 침적, 어닐링, 층진초격자재료를 포함하는 중간층(84)의 침적, 어닐링, 제2백 금층(84)의 침적, 그리고나서 커패시터(8)의 패턴닝으로 형성된다. 다른 SOG층(86)이 침적되고, MOSFET(72)에 대한 콘택구멍(106,107)과 커패시터(80)들은 부분적으로 개방되고, SOG(86)는 어닐되고, 콘택구멍(106,107)들은 완전히 개방되고, 그리고 Pt/Ti PtSi 배선층(88,288)이 침적된다.

(3-oxoisoindolin-1-ylidine) propandinitrile derivatives and method for preparing the same

Derivatives of (3-oxoisoindolin-1-ylidine)propandinitrile, and a method for preparing the derivatives. The (3-oxoisoindolin-1-ylidine)propandinitrile derivatives can be prepared easily and at low cost. Also, the derivatives show good heat resistance at a temperature required for manufacturing an electro-optic device, and can minimize light loss at a near infrared light wavelength range by substituting hydrogen of C-H bond by halogen atom. As a result, the derivative of the present invention are useful as an optical material for an electro-optic device. In addition, the (3-oxoisoindolin-1-ylidine)propandinitrile derivatives can be used as an intermediate for synthesizing a new compound having good electro-optic characteristics and heat resistance.

Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same

Metal alkoxycarboxylate-based liquid precursor solutions are used to form electronic devices (100) that include mixed layered superlattice materials (112) of a type having discrete oxygen octahedral layers (124 and 128) collated with a superlattice-generator layer (116). The precursor solutions include a plurality of metal moieties in effective amounts for yielding the layered superlattice materials. These metal moieties are mixed to include an A/B portion capable of forming an A/B layer (124), a perovskite-like AB layer portion capable of forming a perovskite-like AB octahedral layer (128), and a superlattice-generator portion capable of forming the superlattice-generator layer (116). The precursors are deposited in liquid form upon a substrate and annealed to provide the layered superlattice materials.

Method for producing semiconductor fine particles

Disclosed is a method for producing semiconductor fine particles comprising a step of preparing two or more solutions each containing at least one element selected from Group II to Group VI and feeding the solutions to an addition tank with mixing the two or more solutions fed to the addition tank by stirring to produce fine particles. In this production method, (1) flows of different rotational directions are formed by stirring the two or more solutions fed to the addition tank, and/or (2) a solvent is introduced into the addition tank beforehand, a mixing chamber having an opening is disposed below liquid surface of the solvent in the addition tank, and the two or more solutions are fed to the mixing chamber with controlling flow rates of the solutions. According to this production method, semiconductor fine particles having uniform grain sizes can be produced in a simple and convenient manner.

Reverse synthetic methods for making organic non-linear optical materials

A reverse synthetic strategy for making organic non-linear optical chromophores involves building up the chromophore from the electron-withdrawing end toward the electron-donating end.

Solution deposition method for forming metal oxide or metal hydroxide layer

A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

(3-OXOISOINDOLINE-1-YLIDINE) PROPANEDINITRILE DERIVATIVES AND THEIR PREPARATION PROCESS

Prototyping of patterned functional nanostructures

The present invention provides a coating composition comprising: A coating composition comprising: TEOS; a surfactant; at least one organosilane; HCl; water ; andethanol. The present invention also provides films made from such a coating composition and a method for making such films.

Substituted pyrazoline

A compound of the formula: wherein E is an ethenyl group of the formula: in which X is H when Y is NO₂; Y is H when X is NO₂; or X is CN when Y is CN which has the capacity to form a crystal in which the molecules are aligned substantially in the same manner giving it non-linear optical properties. The cyrstalline product is thus adapted for use in devices exhibiting non-linear optical effects.

Methods and reactors for forming superconductor layers

Methods for forming superconductor layers are disclosed, which comprise heating a film containing barium fluoride on a substrate and impinging a reactant on the film to convert it into a superconductor material. Also reactors and systems for carrying out the provided methods are disclosed.

Chromophoric compounds and their preparation process

Optically nonlinear pyridine-N-oxide complexes

Compounds capable of second harmonic generation are provided for use in a nonlinear optical device, in combination, a harmonic-generating medium, means for introducing coherent radiation into said harmonic-generating medium, and means for utilizing the coherent radiation emitted from said medium, wherein said medium consists essentially of a crystalline body of a compound of the formula: ##STR1## wherein n is about 0-5, m is about 0-5, R 1 is individually --NO 2 , --OR 2 , --CH, --NR 2 R 3 , (C 1 -C 5 )alkyl, --CO 2 H, halo, ##STR2## R is individually --NO 2 , --CH 3 , --OR 2 , --NR 2 R 3 , --CN, ##STR3## and X is --O--, --S--, --N(R 2 )--, ##STR4## or --C.tbd.C--; and wherein R 2 and R 3 are individually H, (C 1 -C 5 alkyl, aryl or ar(C 1 -C 5 )alkyl.

Substituted pyrazoline having non-linear optical properties

A compound of the formula: ##STR1## wherein E is an ethenyl group of the formula: ##STR2## in which X is H when Y is NO 2 ; Y is H when X is NO 2 ; or X is CN when Y is CN which has the capacity to form a crystal in which the molecules are aligned substantially in the same manner giving it non-linear optical properties. The crystalline product is thus adapted for use in devices exhibiting non-linear optical effects.

Organic non-linear optical device

In a semiconductor laser wavelength conversion device comprising a semiconductor laser beam souce, a lens, a single crystal of a non-linear optical material and a filter, the non-linear optical material is represented by the general formula, A--(Cx)--B, where (Cx) is --(CH)--or --CH═CH--C(═CH)--, A and B are each atomic group comprising a π-electron conjugated structure containing at least one electron withdrawing group or one electron donating group. The device can generate a second harmonic wave having an intensity of 4 or more stronger than that of urea and having a cutoff wavelength of 420 nm or less.

Organic compounds active in nonlinear optics and electro-optical devices containing them

Semiconductor devices having gallium nitride epilayers on diamond substrates

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Non-linear optical materials, method of manufacturing the same and optical wave length converter

The invention relates to a non-linear optical material comprising a salt of an organic compound with an optically active organic acid, wherein said organic compound has a conjugated 7T electron system containing both electron donor and acceptor groups and has at least one substituent group represented by the following formulas (1), (2) and (3) which is located outside of said conjugated π electron system. The invention also concerns a method of manufacturing the optical material and an optical converter which uses the non-linear optical material. According to the invention, a second-order non-linear optical material, which is readily capable of crystal growth, permits a large crystal to be readily obtained, and ensures high hardness of the crystal and gives excellent processibility and non-linear optical characteristics.

Paranitroaniline derivatives for non-linear and electro-optic use, and process for their preparation

Process for fabricating layered superlattice materials and making electronic devices including same

A liquid precursor containing a metal is applied to a substrate (18), RTP baked, and annealed to form a layered superlattice material (30). To obtain good electrical properties, prebaking the substrate (18) in oxygen in the RTP and anneal are essential, except for high bismuth content precursors. Excess bismuth between 110 % and 140 % of stoichiometry and RTP temperature of 750 °C is optimum. The film is formed in two layers (30A, 30B), the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor.

Methine dyes in non-linear optics

Dyes having formula (I), in which R<1> stands for halogen, cyano or thiocyanato; R<2> stands for possibly substituted C1-C8-alkyl or possibly substituted phenyl; R<3> stands for a 5- or 6-membered aromatic carbocyclic or heterocyclic residue; and L stands for nitrogen or a residue having formula CH or CH=CH-CH, are used in non-linear optics. Also disclosed are polymers derived from these dyes, their use in non-linear optics, new methine dyes, thiazolaldehydes as their intermediate products and a process for producing the same.

NITROGEN SIX-RING CONNECTIONS

Nitrogenous compounds with six-membered rings having the formula (I) and polymer materials containing the organic residue of a compound having the formula (I) covalently linked therewith are suitable as non-linear optical media. In the formula (I), D, W, X, Y and Z have the meaning given in the first claim.

USE OF LAYERED GRILLED MATERIAL

Use of azo dyes in non-linear optics

The invention concerns the use, in non-linear optics, of azo dyes in which the diazo component is derived from an aniline or a five-membered aromatic heterocyclic amine which has one to three ring hetero-atoms selected from the group comprising nitrogen, oxygen and sulphur and which may be fused with a benzene, thiophene, pyridine or pyrimidine ring, the coupling component of the dye being selected from the series comprising the pyrrolidin-1-yl benzenes, piperidin-1-yl benzenes, pyrrolidin-1-yl naphthalenes and piperidin-1-yl naphthalenes.

Process for the production of iron oxides epitaxially coated with cobalt the coated oxides and their cue

In improved cobalt coated magnetic iron oxide having increased coercive field strength and highly efficient for use in magnetic recording devices and processes is produced by subjecting uncoated magnetic iron oxide particles to an acid treatment and then epitaxially coating the treated particles with cobalt.

Production of piezo-electric elements

Organic second-order nonlinear optical chromophore and synthetic method and application thereof

本发明涉及一种有机二阶非线性光学发色团及其合成方法和应用，所述发色团具有式Ⅰ所示结构： ，式Ⅰ其中， 为共轭电子桥，R 1 、R 2 分别独立地选自取代或未取代的下述基团：C 1‑6 的烷基、C 1‑6 的烷氧基、C 4‑12 的芳基或杂芳基中的任一种。本发明的发色团选用久洛尼定衍生物作为电子给体，三氰基呋喃类为电子受体，具有合适结构，可以有效降低分子间作用力，具有较高的一阶超极化率（β值）。同时，该发色团具有适当的共轭长度，具有较好的稳定性能，热分解温度可以达到250℃以上，并且，本发明的发色团具有优异的光学性能，其电光系数可以达到76pm/V以上。

Methods and reactors for forming superconductor layers

Benzimidazole-derivatized azo compounds and polymers derived therefrom for nonlinear optics

A second order nonlinear optically-active azo monomer comprising a benzimidazole moiety. The monomers can be incorporated into both linear and crosslinked polymers useful in electrooptical devices.

Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same

A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components (10) includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.

Non-linear optical device with C18H16N2O2 single crystal and preparation method of non-linear optical device

本发明涉及C 18 H 16 N 2 O 2 非线性光学器件及制法，C 18 H 16 N 2 O 2 晶体可用自发结晶降温法和籽晶法制备；其生长方法简单、易于操作、成本低；所获的C 18 H 16 N 2 O 2 非线性光学晶体具有较宽的透过波段0.55～2.2μm，粉末倍频效应强度为2～3倍OH1，其物化性能稳定，不潮解；可用于制作非线性光学器件，在室温下，用Ho:Tm:Cr:YAG调Q激光器作为光源，入射波长为2090nm的红外光，输出波长为1045nm的红外激光；所述器件包含将至少一束入射电磁辐射通过至少一块该C 18 H 16 N 2 O 2 单晶后产生至少一束频率不同于入射电磁辐射的输出辐射的装置，该装置可为太赫兹波发生器、二次谐波发生器、上频率转换器、下频率转换器或光参量振荡器等。

Preparation method of large-size cesium chlorobromide copper crystal

本发明涉及晶体材料制备技术领域，尤其是一种大尺寸氯溴化铯铜晶体的制备方法，现提出如下方案，制备方法包括如下步骤：将等摩尔的CsBr和CuBr 2 混合、研磨得到第一多晶粉体；将等摩尔的CsCl和CuCl 2 混合、研磨得到第二多晶粉体；将第一多晶粉体和第二多晶粉体混合并研磨；将混合多晶粉体溶解于去离子水形成晶体生长母液，将晶体生长母液置于35℃‑40℃下,再恒温蒸发溶剂得到氯溴化铯铜晶体。本发明制备的新型混合卤素钙钛矿CsCu(Br 1‑x Cl x ) 3 材料，采用固相研磨法与水溶液蒸发法相结合，具有合成工艺简单，溶剂无污染，生长周期短的优点，可以得到高质量、大尺寸的CsCu(Br 1‑x Cl x ) 3 晶体。

METHOD FOR QUICK IDENTIFICATION AND RECEIVING CRYSTAL FORMS

1. Способ быстрой идентификации и получения кристаллической формы органического вещества с помощью использования менее грамма указанного органического вещества, включающий этапы термоциклического суспендирования, охлаждения, добавления антирастворителя и выпаривания растворителя в качестве основных этапов кристаллизации.2. Способ по п. 1, который дополнительно включает этапы:(a) проведения начального порошкового рентгеноструктурного анализа (XRPD) исходного образца указанного органического вещества; после чего(b) проведения начальной визуальной оценки растворимости органического вещества в каждом из нескольких растворителей или смесей этих растворителей при обычной или комнатной температуре; после чего(c) проведения оценки растворимости органического вещества в каждом из подмножеств, содержащем несколько растворителей из этапа (b), или смеси указанных растворителей, при повышенной температуре, при том, что суспензию или эмульсию органического вещества в указанном растворителе или смеси растворителей подвергают термоциклическому суспендированию в течение определенного периода времени; и после чего осуществляют любой из: i) этапов с (d1) по (d5), (e1), (e2) и (f4); ii) этапы с (f1) по (f4); iii) этапов (d1), (e1), (e2) и (f4); iv) этапов (d1), (d2), (e1), (e2) и (f4); и (v) этапов с (d1) по (d4), (e1), (e2) и (f4), изложенных ниже:(d1) охлаждения раствора указанного органического вещества в указанном растворителе или смеси растворителей до температуры от приблизительно 3°C до приблизительно 6°C, если образец органического вещества и растворитель/смесь растворителей из этапа (c) остается прозрачным раствором, и поддержания указанного раствора при указанной темпер

Mineralizer composition and method for growing zinc oxide crystals, films and powders

Aqueous mineralizer solutions having retrograde solubility for ZnO contain a mineral acid in which ZnO is soluble and at least one compound of a coordinating ligand for Zn 2+ ions wherein the coordinating ligand compound is present in an amount that is effective to inhibit Zn(OH) + ion formation as ZnO is dissolved in the solution. Reduced temperature methods using the mineralizer solutions to grow pure or doped ZnO crystals, pure or doped ZnO thick or thin films, and pure or doped ZnO crystalline powders are also disclosed. Cation doped ZnOs prepared by the inventive methods are also disclosed.

Salts of poly(1,4-pyridinium) and their use

A process for the preparation of poly(1,4-pyridinium) salts of the formula I <IMAGE> in which 4-bromopyridine or 4-chloropyridine is reacted with an inorganic compound in an organic solvent at a temperature in the range from 20 to 100 DEG C. The anion X<-> of the inorganic compound has a mean molecular weight of greater than 100. The cation of the inorganic compound forms, during the reaction, a chloride or bromide which is sparingly soluble in organic solvents. The degree of polymerisation n is at least 5. The reaction is carried out in the presence of a catalyst or in the presence of a mixture of a plurality of catalysts. The inorganic compounds employed are preferably alkali metal, alkaline earth metal, silver, lead or mercury salts. <IMAGE>

The integrated growth furnace of water-soluble liquid crystal

水溶液晶体一体化生长炉，包括生长缸、储料仓、流量控制仓、温控系统和晶体生长总承。所述生长缸的内侧壁上部设置有一个集水槽。所述储料仓套在生长缸的外部，其内部放置有晶体原料。所述储料仓包括筒体和压盖，所述压盖上设置稀释皿。所述储料仓的上方设置有流量控制仓，所述流量控制仓包括上仓室，且所述上仓室通过出水管与所述集水槽相连通，所述出水管上设置有定量滴定器。所述上仓室与储料仓之间设置有水位压力管。所述初次补液管设置于储料仓内，且所述初次补液管的上端与稀释皿连通。本发明通过将储料仓集成到生长缸上，使整个装置更加合理、紧凑不仅节约了空间资源，还节省了原材料。

Patent FR2474492B1

Molecular crystal

Heterocyclical chromophore architectures

Layered superlattice material applications

Un circuit stratifié (36) comprend un matériau de surstructure stratifiée (60, 60', 92) représenté par la formule (1) dans laquelle A1, A2 ... Aj représentent des éléments de site A (84) d'une structure de type pérovskite, S1, S2 ... Sk représentent des éléentts générateurs de surstructure (87), B1, B2 ... Bl représentent des éléments de site B (86) d'une structure de type pérovskite (94), Q représente un anion (88), les exposants indiquent que les valences des éléments respectifs (84, 87, 86, 88), les indices indiquent le nombre d'atomes de l'élément de la cellule unitaire (89) et, au moins w1 et y1 sont non zéro. Quelques uns desdits matériaux sont des ferro-électriques extrêmement résistants et s'utilisent dans des mémoires non volatiles (36). D'autres sont des matériaux à constantes diélectriques élevées ne se détériorant pas pendant des périodes d'utilisation prolongée et s'appliquent à des mémoires volatiles (36). A laminated circuit (36) comprises a laminated substructure material (60, 60 ', 92) represented by the formula (1) in which A1, A2 ... Aj represent site elements A (84) of a structure of perovskite type, S1, S2 ... Sk represent elements generating the superstructure (87), B1, B2 ... Bl represent site elements B (86) of a structure of the perovskite type (94), Q represents a anion (88), the exponents indicate that the valences of the respective elements (84, 87, 86, 88), the indices indicate the number of atoms of the element of the unit cell (89) and, at least w1 and y1 are non zero. Some of said materials are extremely resistant ferroelectrics and are used in non-volatile memories (36). Others are materials with high dielectric constants which do not deteriorate during periods of prolonged use and apply to volatile memories (36).

Non-linear optical material, method of manufacturing the same and optical wavelength converter

The invention relates to a non-linear optical material comprising a salt of an organic compound with an optically active organic acid, wherein said organic compound has a conjugated π electron system containing both electron donor and acceptor groups and has at least one substituent group represented by the following formulas (1), (2) and (3) which is located outside of said conjugated π electron system. The invention also concerns a method of manufacturing the optical material and an optical converter which uses the non-linear optical material. ##STR1## According to the invention, a second-order non-linear optical material, which is readily capable of crystal growth, permits a large crystal to be readily obtained, and ensures high hardness of the crystal and gives excellent processibility and non-linear optical characteristics.

Semiconductor devices having gallium nitride epilayers on diamond substrates

Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

New 3-oxoisoindolin-1-ylidene propan-di:nitrile derivatives

La présente invention propose des dérivés de (3-oxoisoindoline-1-ylidine) propanedinitrile de formule 1 : (CF DESSIN DANS BOPI) ainsi que leur procédé de préparation, ces dérivés étant utiles en tant que chromophores optiquement actifs.

Substrate for growing pendeo epitaxy and method of forming the same

本发明提供了一种悬挂外延生长衬底及其制造方法。所述悬挂外延生长衬底包括：衬底；用于悬挂外延生长的多个图案区，沿第一方向形成在所述衬底上；和至少一个溶液阻隔层，接触所述多个图案区并沿第二方向形成在所述衬底上，其中所述溶液阻隔层在半导体的制造工艺期间防止溶液的流动，因此防止半导体装置由于悬挂外延生长工艺中的半导体装置的空气间隙和百分比缺陷而导致的污染。

Molecular crystals of nitropyridine-n-oxide derivatives substituted by a chiral radical

METHOD AND DEVICE FOR DEPOSITING A THIN FILM SUBSTRATE OF A COMPOUND HAVING AT LEAST ONE CATIONIC COMPONENT AND AT LEAST ONE ANIONIC COMPONENT

L'INVENTION A POUR OBJET UN PROCEDE DE DEPOT SUR UN SUBSTRAT D'UNE COUCHE MINCE D'UN COMPOSE COMPORTANT AU MOINS UN CONSTITUANT CATIONIQUE C ET AU MOINS UN CONSTITUANT ANIONIQUE A, TEL QUE DU SULFURE DE ZINC. ON FORME SUR LE SUBSTRAT 11 AU MOINS DEUX COUCHES IONIQUES SUPERPOSEES COMPORTANT RESPECTIVEMENT LE OU LESDITS CONSTITUANTS CATIONIQUES C ET LE OU LESDITS CONSTITUANTS ANIONIQUES A PAR IMMERSIONS SUCCESSIVES DU SUBSTRAT DANS UNE PREMIERE SOLUTION 3 CONTENANT PAR EXEMPLE UN SEL DE C TEL QUE DU SULFATE DE ZINC ET DANS UNE DEUXIEME SOLUTION 3 CONTENANT PAR EXEMPLE UN SEL DE A TEL QUE DU SULFURE DE SODIUM, EN EFFECTUANT UN RINCAGE DU SUBSTRAT ( EN 5) ENTRE DEUX IMMERSIONS. THE SUBJECT OF THE INVENTION IS A PROCESS FOR DEPOSITING A THIN-LAYER SUBSTRATE OF A COMPOUND INCLUDING AT LEAST ONE CATIONIC CONSTITUENT C AND AT LEAST ONE ANIONIC CONSTITUENT A, SUCH AS ZINC SULPHIDE. ON THE SUBSTRATE 11 AT LEAST TWO SUPERIMPOSED IONIC LAYERS CONTAINING RESPECTIVELY THE SAID CATIONIC CONSTITUENT (S) C AND THE SAID ANIONIC CONSTITUENT (s) BY SUCCESSIVE IMMERSIONS OF THE SUBSTRATE IN A FIRST SOLUTION 3 CONTAINING FOR EXAMPLE A SALT OF C SUCH AS ZINCATE ZINCATE AND IN A SECOND SOLUTION 3 CONTAINING FOR EXAMPLE A SALT OF A SUCH AS SODIUM SULPHIDE, BY RINSING THE SUBSTRATE (AT 5) BETWEEN TWO IMMERSIONS.

MOLECULAR CRYSTALS COMPRISING CHIRAL RADICAL SUBSTITUTED DERIVATIVES OF NITROPYRIDINE-N-OXIDE

L'INVENTION A POUR OBJET DES CRISTAUX MOLECULAIRES. SELON L'INVENTION, CES CRISTAUX SONT FORMES DE MOLECULES DE DERIVES DE LA NITROPYRIDINE-N-OXYDE SUBSTITUES PAR AU MOINS UN RADICAL CHIRAL. APPLICATION A LA CONVERSION DE FREQUENCES OPTIQUES ET A L'ELECTRO-OPTIQUE.

Paranitroaniline derivatives for non-linear and electro-optic use, and process for their preparation

Metamaterials and methods of making the same

A metamaterial includes a non-linear organic material and a plurality of metallic resonators embedded substantially within the non-linear organic material.

Azo dyestuff- and urethane-containing polyadduct and its use in nonlinear optics

Azo dyestuff- and urethane-containing polyadducts comprising (a) at least one organic polyisocyanate, (b) at least one diol of a heterocyclic azo dyestuff, and if desired (c) one or more compounds having at least two groups reactive to NCO, which have an average molecular weight M n of up to 500 g/mol, and/or (d) one or more polyhydroxy compounds having average molecular weights M n of from over 500 up to 5000 g/mol. These polyadducts are suitable for applications in nonlinear optics.