Solution deposition method for forming metal oxide or metal hydroxide layer

23-06-2020 дата публикации

Номер:

US10689775B2

Автор: Daniel ESTRADA, Evan C. O'HARA, Jacob J. Richardson

Принадлежит: Seoul Semiconductor Co Ltd

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

C C2 C23 C23C C23C1 C23C18 C23C18/C23C18/1 C23C18/12 C23C18/121 C23C18/1216 C23C18/124 C23C18/1245 C23C18/125 C23C18/128 C23C18/1283 C23C18/16 C23C18/165 C23C18/1651 C25 C25D C25D7 C25D7/C25D7/1 C25D7/12 C25D7/123 C3 C30 C30B C30B1 C30B19 C30B19/C30B19/0 C30B19/00 C30B2 C30B29 C30B29/C30B29/1 C30B29/10 C30B29/16 C30B7 C30B7/C30B7/0 C30B7/00 C30B7/04 H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/0 H01L21/02 H01L21/021 H01L21/0217 H01L21/02175 H01L21/022 H01L21/0228 H01L21/02282 H01L21/0229 H01L21/02293 H01L21/023 H01L21/0230 H01L21/02304 H01L21/02307

IPC - классификация

C C3 C30 C30B C30B2 C30B29 C30B29/C30B29/1 C30B29/10 C30B29/16 C30B7 C30B7/C30B7/0 C30B7/00

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