02-02-2017 дата публикации
Номер: US20170029986A1
Принадлежит:
A decorative engineered self-hem and a method to prepare the decorative engineered self-hem in a single fabric is disclosed herein. It is prepared without having any additional cut and sew, with various weave patterns designed in a design area 10-20 inches from a selvedge area and the rest of the fabric is woven in conventional weave pattern such as satin/twill. The method of preparation includes cutting the fabric parallel to a selvedge area; folding the fabric overlapping the selvedge area; and folding the full fabric horizontally and, at the same time, hemming of edge of the selvedge area to finish. 1. A decorative engineered self-hem in a single fabric without having any additional cut and sew , with a weave pattern is designed in a design area 10-20 inches from an edge of the fabric forming a selvedge area , and the rest of the fabric is woven in a weave pattern different from the pattern of the design area.2. The decorative engineered self-hem according to claim 1 , wherein the rest of the fabric is woven in a weaver pattern such as satin/twill.3. A decorative engineered self-hem according to claim 1 , wherein said fabric is constructed with 60 s warp yarn and 60 s count weft yarn claim 1 , and wherein the final thread count is 300.4. A decorative engineered self-hem according to claim 1 , wherein said fabric is optionally constructed with 40 s claim 1 , 60 s claim 1 , 80 s claim 1 , 100 s claim 1 , 120 s yarn count claim 1 , and wherein the thread count is 200 TC or above. The present application claims foreign priority under 35 U.S.C. 119 to patent application 3394/MUM/2013, filed in India on Oct. 28, 2013, which patent application is incorporated herein by reference. The present application also is a divisional application of U.S. patent application Ser. No. 14/525,212, filed Oct. 27, 2014, and now granted as U.S. Pat. No. 9,410,271, which '212 application disclosure and '271 patent disclosure are incorporated herein by reference. The '212 application and ' ...
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