03-10-2013 дата публикации
Номер: US20130260495A1
Принадлежит:
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer. 1. A method of manufacturing a light emitting device , the method comprising:forming a reflection buffer layer structure including a metal buffer layer and a DBR layer on a silicon substrate; andforming a GaN-based light emitting layer structure.2. The method of claim 1 , wherein the forming of the reflection buffer layer structure includes:forming the metal buffer layer on the silicon substrate,forming the DBR layer on the metal buffer layer, andpatterning the DBR layer to form a plurality of holes in the DBR layer.3. The method of claim 2 , wherein the forming of the DBR layer includes alternately stacking layers including a SiOlayer and a material layer claim 2 , the material layer including at least one of SiC claim 2 , AlN claim 2 , GaN claim 2 , BN claim 2 , BP claim 2 , AlInGaN claim 2 , and AlBGaN.4. The method of claim 3 , wherein the forming of the DBR layer includes alternately stacking layers including a SiC layer and a SiOlayer.5. The method of claim 1 , wherein the forming of the metal buffer layer includes forming the metal buffer layer to have a single-layered structure including an XY material claim 1 ,X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and{'sub': '2', 'Y is at least one of N, B, and B.'}6. The method of claim 2 , wherein the forming of the metal buffer layer includes patterning the metal buffer layer at a same time as the patterning of the DBR layer.7. The method of claim 2 , further comprising:forming an XY material layer on the DBR layer,wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and{'sub': '2', 'Y is at least one of N, B, and B.'}8. The method of claim ...
Подробнее