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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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24-01-2019 дата публикации

Лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка

Номер: RU0000186565U1
Автор: Владимир Иванович Турчин
Принадлежит: Федеральное государственное бюджетное учреждение "Институт теоретической и экспериментальной физики имени А.И. Алиханова Национального исследовательского центра "Курчатовский институт"

Предложен лазерно-плазменный инжектор ионов с динамической электромагнитной фокусировкой ионного пучка, состоящий из: лазера, световое излучение которого, попадая на мишень, образует плазму, дрейфующую в пролетном канале, мишени, пролетного канала, на выходе которого установлен датчик тока для измерения токовых и временных параметров плазмы и ионно-оптической системы (ИОС), на электродах которой существуют неизменяющиеся по величине электрические потенциалы. При этом на выходе ИОС установлена периодическая линзовая система, состоящая из трех расположенных вдоль продольной оси ионного пучка собирающих магнитных линз, выполненных в виде соленоидов с экранами. Первый соленоид, считая от ИОС, электрически подключен к генератору импульсов тока линейно изменяющейся величины, который электрически связан с лазером и датчиком тока. Датчик тока установлен в плазме на выходе пролетного канала и электрически связан с входом генератора импульсов тока линейно изменяющейся величины и установлен на выходе пролетного канала перед ИОС, которая осуществляет отбор ионов из плазмы, формирование и дальнейшее ускорение ионного пучка. Второй соленоид, считая от ИОС, электрически подключен к усилителю тока «У», который электрически связан с тем же датчиком тока. Третий, по счету от ИОС, соленоид установлен на выходе периодической линзовой системы и электрически подключен к отдельному источнику электропитания. Этот соленоид позволяет задавать требуемый угол наклона огибающей ионного пучка после компенсации его углового расхождения, связанного с нестабильностью положения плазменной границы эмиссии ионов. Предложенная конструкция позволяет непрерывно осуществлять поэтапную динамическую фокусировку экстрагированного из лазерной плазмы ионного пучка, обладающего большой кинетической энергией движения, при помощи системы отдельно взятых фокусирующих линз. Жесткость фокусировки в первых двух линзах поставлена в зависимость от скорости движения лазерной плазмы в пролетном канале и от изменения ее ...

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Номер записи: 1
20-09-2012 дата публикации

Method for extending lifetime of an ion source

Номер: US20120235058A1
Автор: Ashwini Sinha, Lloyd A. BROWN
Принадлежит: Praxair Technology Inc

This invention relates in part to a method for preventing or reducing the formation and/or accumulation of deposits in an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The method involves introducing into the ionization chamber a dopant gas, wherein the dopant gas has a composition sufficient to prevent or reduce the formation of fluorine ions/radicals during ionization. The dopant gas is then ionized under conditions sufficient to prevent or reduce the formation and/or accumulation of deposits on the interior of the ionization chamber and/or on the one or more components contained within the ionization chamber. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization.

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Номер записи: 2
09-05-2013 дата публикации

In-line corona-based gas flow ionizer

Номер: US20130112892A1
Автор: Leslie W. Partridge, Lyle Dwight NELSON, Peter Gefter
Принадлежит: ILLINOIS TOOL WORKS INC

Self-balancing, corona discharge for the stable production of electrically balanced and ultra-clean ionized gas streams is disclosed. This result is achieved by promoting the electronic conversion of free electrons into negative ions without adding oxygen or another electronegative gas to the gas stream. The invention may be used with electronegative and/or electropositive or noble gas streams and may include the use of a closed loop corona discharge control system.

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Номер записи: 3
18-07-2013 дата публикации

SWITCHABLE GAS CLUSTER AND ATOMIC ION GUN, AND METHOD OF SURFACE PROCESSING USING THE GUN

Номер: US20130180844A1
Автор: BARNARD Bryan
Принадлежит:

A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector. 1. A method of processing one or more surfaces , the method of processing comprising:providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; andselectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters, or in the atomic mode by mass selecting ionised gas atoms using the variable mass selector thereby irradiating a surface ...

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Номер записи: 4
03-10-2013 дата публикации

TARGET FOR GENERATING ION AND TREATMENT APPARATUS USING THE SAME

Номер: US20130261369A1
Автор: JUNG Moon Youn, KIM Seunghwan, SHIN Dong-Ho
Принадлежит: Electronics and Telecommunications Research Institute

Provided are an ion generation target and a treatment apparatus using the same. The treatment apparatus includes an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape, a support supporting the bubble having the hemispheric shape, a bubble generation member for generating the bubble having the hemispheric shape on the support by using the ion generation material, and a laser radiating laser beam onto a surface of the bubble to generate ions from the ion generation material, thereby projecting the ions onto a tumor portion of a patient. 1. An ion generation target comprising:an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape; anda support supporting the bubble having the hemispheric shape.2. The ion generation target of claim 1 , wherein the ions are protons or carbon ions.3. The ion generation target of claim 2 , wherein the ions are the protons claim 2 , and the ion generation material is water.4. The ion generation target of claim 2 , wherein the ions are the carbon ions claim 2 , and the ion generation material is oil containing a carbon component.5. The ion generation target of claim 1 , wherein the support is a transparent substrate or a ring type bubble support.6. The ion generation target of claim 1 , wherein a thickness of a membrane of the bubble is adjusted by viscosity of the ion generation material.7. The ion generation target of claim 1 , wherein the ion generation material further comprises graphene powder or graphite powder.8. An ion beam treatment apparatus comprising:an ion generation target comprising an ion generation material generating the ions by incident laser beam, the ion generation material generating a bubble having a hemispheric shape and a support supporting the bubble having the hemispheric shape;a bubble generation member for generating the bubble ...

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Номер записи: 5
31-10-2013 дата публикации

ION TRANSFER DEVICE

Номер: US20130284916A1
Автор: Sato Tomoyoshi
Принадлежит: ATONARP INC.

There is provided a transfer device () that transfers ionized substances in a first direction. The transfer device () includes a drift tube () and the drift tube () includes electrode plates () and () constructing an outer wall and a plurality of ring electrodes () disposed inside the tube. The ring electrodes () forms a first AC electric field for linear driving that causes the ionized substances to travel in the first direction that is the axial direction. The electrode plates () and () form an asymmetric second AC electric field that deflects the direction of travel of the ionized substances. 115-. (canceled)16. A transfer device that transfers ionized substances in a first direction , comprising:a plurality of ring-shaped first electrodes disposed in a line in the first direction, regularly reverse a direction of electric fields formed between at least some adjacent electrodes out of the plurality of first electrodes, and form a plurality of first alternating current electric field for linear driving that causes at least some of the ionized substances to travel in the first direction; anda plurality of second electrodes that are disposed outside the plurality of first electrodes, are aligned in a second direction that is perpendicular to the first direction, and form at least part of a flow path of the ionized substances, the plurality of second electrodes forming a common second alternating current electric field in a direction that is perpendicular to the plurality of first alternating current electric fields formed by the plurality of first electrodes and forming the second alternating current electric field that is asymmetric and deflects a direction of travel of the ionized substances in the second direction.17. The transfer device according to claim 16 ,wherein the plurality of second electrodes include two facing electrodes that form a cylindrical flow path and the plurality of first electrodes are disposed along a center axis of the cylindrical flow path ...

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Номер записи: 6
14-11-2013 дата публикации

ION GENERATOR

Номер: US20130299717A1
Автор: FUKADA Yoshinari
Принадлежит: KOGANEI CORPORATION

In an ion generator, a flexible discharge electrode composed of one wire is provided to a base , and a turning motion of a free end of the discharge electrode about a fixed end of the discharge electrode is performed by repulsive force of a corona discharge generated by supplying a high voltage to the fixed end . Therefore, in comparison with a discharge electrode composed of a bundle of thin wires, it is possible to significantly reduce dust emission from the free end of the discharge electrode , and to further improve the ion generator in maintenance interval. Since the discharge electrode is compose of one wire, it is possible to reduce the discharge electrode in size, easily observe the state of the discharge electrode , and simplify its maintenance. Since the discharge electrode performs a turning motion, it is possible to transport the generated air ions EI to a wide area of a packaging film , and to enhance ionizing efficiency. 1. An ion generator comprising a flexible discharge electrode which is composed of one wire , and which has a fixed end and a free end ,wherein a turning motion of the free end about the fixed end is performed by repulsive force of a corona discharge generated by supplying a high voltage to the fixed end.2. The ion generator according to claim 1 , further comprising a turning-motion control member for controlling a turning motion of the discharge electrode.3. The ion generator according to claim 1 , wherein the discharge electrode is set to 100 micrometers or less in diameter size.4. The ion generator according to claim 1 , wherein the discharge electrode is formed of titanium alloy. The present invention relates to an ion generator for generating air ions which are used for neutralizing and eliminating static electricity from an electrically-charged object such as for example a jig for assembling electronic parts, and a packaging film made of plastic material.When a packaging film made of plastic material, a jig for assembling ...

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Номер записи: 7
05-12-2013 дата публикации

IMAGING AND PROCESSING FOR PLASMA ION SOURCE

Номер: US20130320229A1
Автор: Graupera Anthony, Kellogg Sean, Maazouz Mostafa, Miller Tom, Zhang Shouyin
Принадлежит: FEI COMPANY

Applicants have found that energetic neutral particles created by a charged exchange interaction between high energy ions and neutral gas molecules reach the sample in a ion beam system using a plasma source. The energetic neutral create secondary electrons away from the beam impact point. Methods to solve the problem include differentially pumped chambers below the plasma source to reduce the opportunity for the ions to interact with gas. 1. A charged particle beam system comprising:a plasma chamber for containing a plasma;a source electrode for biasing the plasma to a voltage of at least 10,000 V;an extraction electrode for extracting ions from the plasma chamber;a focusing lens for focusing the ions into a beam directed toward the work piece;a sample chamber for containing a work piece, the sample chamber connected to a vacuum pump; anda first intermediary vacuum chamber connected at one end to the plasma chamber and at the other end through a differential pumping aperture to the sample chamber or to one or more additional intermediary vacuum chamber, the first intermediary vacuum chamber connected to a vacuum pump, the first and the one or more additional intermediary vacuum chamber or chambers reducing the collision of the ion beam with neutral gas particles, thereby reducing the creation of energetic neutral particles that impact the work piece.2. The charged particle beam system of further comprising at least one additional intermediary vacuum chamber between the first intermediary vacuum chamber and the sample chamber claim 1 , each of the at least one additional intermediary vacuum chambers connected to a vacuum pump and separated from the preceding and succeeding chambers by differential pumping apertures.3. The charged particle beam system of in which each of the additional intermediary vacuum chamber has a lower pressure than the immediately preceding intermediary vacuum chamber.4. The charged particle beam system of in which each of the additional ...

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Номер записи: 8
26-12-2013 дата публикации

IONIZATION METHOD, MASS SPECTROMETRY METHOD, EXTRACTION METHOD, AND PURIFICATION METHOD

Номер: US20130341279A1
Автор: Arakawa Ryuichi, Otsuka Yoichi
Принадлежит:

To achieve soft ionization more easily when a slight amount of substance is ionized under an atmosphere pressure. An ionization method for a substance contained in a liquid, including: supplying the liquid to a substrate from a probe and forming a liquid bridge made of the liquid containing the substance dissolved therein, between the probe and the substrate; oscillating the probe; and generating an electric field between an electrically conductive portion of the probe in contact with the liquid and an ion extraction electrode. 1. An ionization method for a substance contained in a liquid , comprising:(i) supplying the liquid onto a substrate from a probe and forming a liquid bridge made of the liquid containing the substance, between the probe and the substrate; and(ii) generating an electric field between an electrically conductive portion of the probe in contact with the liquid and an ion extraction electrode.2. The ionization method according to claim 1 , wherein one end of the probe is oscillated in a direction that intersects with an axis of the probe.3. The ionization method according to claim 1 , wherein a position of the one end of the probe is different between the (i) supplying and forming and the (ii) generating.4. The ionization method according to claim 1 , wherein claim 1 , in the (ii) generating claim 1 , the liquid forms a Taylor cone at an end of the probe.5. The ionization method according to claim 1 , wherein claim 1 , in the (ii) generating claim 1 , part of the liquid escapes as charged droplets from the end.6. The ionization method according to claim 5 , wherein the charged droplets escape from the Taylor cone.7. The ionization method according to claim 5 , wherein the charged droplets cause a Rayleigh fission.8. The ionization method according to claim 1 , wherein the probe includes a plurality of flow paths.9. The ionization method according to claim 1 , wherein the probe includes a protrusion.10. The ionization method according to claim 9 , ...

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Номер записи: 9
27-02-2014 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20140054809A1
Автор: Arestie Steven Mark, Lozano Paulo C.
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. A method of forming one or more emitter bodies made of porous ceramic xerogel comprising:preparing a gel solution comprising a solvent, an acidic aluminum salt, a polymer, and a proton scavenger;providing a mold for one or more emitter bodies, each emitter body of the one or more emitter bodies comprising a base and a tip;pouring the gel solution into the mold;drying the gel solution in the mold to form the one or more emitter bodies made from the porous ceramic xerogel.2. The method of further comprising:mixing aluminum chloride hexahydrate, polyethylene oxide, water, ethanol, and propylene oxide to form the gel solution.3. The method of further comprising:mixing 1 part by mass of polyethylene oxide, 50 parts by mass water, 54.4 parts by mass ethanol, 54.4 parts by mass propylene oxide, and 54 parts by mass of aluminum chloride hexahydrate to form the gel solution.4. The method of further comprising:forming the mold from one or more of polydimethylsiloxane (PDMS), polytetrafluoroethylene (PTFE), polymers, fluoropolymers, paraffin wax, silica, glass, aluminum, and stainless steel.5. The method of claim 1 , wherein the porous ceramic xerogel is alumina xerorgel.6. The method of claim 1 , wherein the porous ceramic xerogel comprises pores approximately 3-5 μm in diameter.7. A method of forming one or more emitter bodies made from porous ceramic material comprising:preparing a slurry of at least silica, water, and a ceramic component;providing a mold for one or more emitter bodies, each emitter body ...

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Номер записи: 10
06-03-2014 дата публикации

SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION

Номер: US20140061501A1
Автор: Brown Lloyd Anthony, Campeau Serge Marius, Sinha Ashwini K.
Принадлежит:

A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4. 1. A dopant gas composition comprising:a silicon-based dopant gas composition comprising a first silicon-based species and a second species, wherein said second species is selected to have a ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions;wherein said silicon-based dopant gas composition improves the ion beam current so as to maintain or increase beam current without degradation of said ion source in comparison to a beam current generated from silicon tetrafluoride (SiF4).2. The dopant gas composition of claim 1 , wherein said first silicon-based species is selected from the group consisting of SiH2Cl2 claim 1 , Si2H6 claim 1 , SiH4 SiF2H2 claim 1 , SiF4 and any combination thereof.3. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4.4. The dopant composition of claim 1 , wherein said first silicon-based species is SiF4 and the second species is disilane (S2H6).5. The dopant composition of claim 4 , wherein said S2H6 has a concentration of less than 50% based on the overall volume of said composition.6. The dopant composition of claim 5 , wherein said S2H6 has a concentration of about 10% or less.7. A system ...

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Номер записи: 11
06-03-2014 дата публикации

Ion generation method and ion source

Номер: US20140062286A1
Автор: Masateru Sato
Принадлежит: SEN Corp

An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.

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Номер записи: 12
06-03-2014 дата публикации

SYSTEMS AND METHODS FOR MONITORING FAULTS, ANOMALIES, AND OTHER CHARACTERISTICS OF A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM

Номер: US20140062495A1
Автор: Brouk Victor, Carter Daniel, HOFFMAN DANIEL J.
Принадлежит: ADVANCED ENERGY INDUSTRIES, INC.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis. 1. A system for monitoring of a plasma processing chamber , the system comprising:a plasma processing chamber configured to contain a plasma;a substrate support positioned within the plasma processing chamber and disposed to support a substrate,an ion-energy control portion, the ion-energy control portion provides at least one ion-energy control signal responsive to at least one ion-energy distribution setting that is indicative of a desired ion energy distribution at the surface of the substrate;a switch-mode power supply coupled to the substrate support and the ion-energy control portion, the switch-mode power supply including one or more switching components configured to apply power to the substrate as a periodic voltage function;an ion current compensation component coupled to the substrate support, the ion current compensation component adding an ion compensation current to the periodic voltage function to form a modified periodic voltage function; anda controller coupled to the substrate support, the controller determining an ion current in the plasma processing chamber from the ion compensation current and comparing the ion current to a reference current waveform.2. The system of claim 1 , wherein the controller compares the modified periodic voltage function to a reference voltage waveform.3. ...

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Номер записи: 13
13-03-2014 дата публикации

Advanced penning ion source

Номер: US20140070701A1
Автор: Amy V. Sy, Arun Persaud, Qing Ji, Thomas Schenkel
Принадлежит: UNIVERSITY OF CALIFORNIA

This disclosure provides systems, methods, and apparatus for ion generation. In one aspect, an apparatus includes an anode, a first cathode, a second cathode, and a plurality of cusp magnets. The anode has a first open end and a second open end. The first cathode is associated with the first open end of the anode. The second cathode is associated with the second open end of the anode. The anode, the first cathode, and the second cathode define a chamber. The second cathode has an open region configured for the passage of ions from the chamber. Each cusp magnet of the plurality of cusp magnets is disposed along a length of the anode.

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Номер записи: 14
27-03-2014 дата публикации

Cluster beam generating apparatus, substrate processing apparatus, cluster beam generating method, and substrate processing method

Номер: US20140083976A1
Автор: Isao Yamada, Masaki Narushima, Noriaki Toyoda
Принадлежит: Tokyo Electron Ltd

A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

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Номер записи: 15
10-04-2014 дата публикации

Method and apparatus for thermal control of ion sources and sputtering targets

Номер: US20140099782A1
Автор: Neil J. Bassom
Принадлежит: Varian Semiconductor Equipment Associates Inc

A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.

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Номер записи: 16
07-01-2021 дата публикации

GeH4/Ar Plasma Chemistry For Ion Implant Productivity Enhancement

Номер: US20210005416A1
Автор: Carbone Nunzio V., Deegan Mervyn, Ewing Peter, Johnson Ronald, Koo Bon-Woong, Sarajlic Ajdin
Принадлежит:

A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam. 1. A method of generating an argon ion beam , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; andextracting argon ions from the ion source to form the argon ion beam, wherein a flow rate of germane is between 0.35 and 1.00 sccm.2. The method of claim 1 , wherein the ion source comprises an indirectly heated cathode ion source.3. The method of claim 1 , wherein the ion source comprises an RF ion source.4. The method of claim 1 , wherein the ion source comprises a Bernas source claim 1 , a capacitively coupled plasma source claim 1 , an inductively coupled source claim 1 , or a microwave coupled plasma source.5. The method of claim 1 , wherein no halogen gasses are introduced into the ion source.6. The method of claim 1 , wherein the ion source is a component of a beam-line implantation system.7. A method of generating an argon ion beam claim 1 , comprising:introducing germane and argon into an ion source;ionizing the germane and argon to form a plasma; and extracting argon ions from the ion source to form the argon ion beam,wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 10% relative to an argon ion beam generated without use of germane at a same extraction current.8. The method of claim 7 , wherein a flow rate of germane is such that a beam current of the argon ion beam is increased at least 15% relative to the argon ion beam generated without use of germane at a same extraction current.9. The method of claim 7 , wherein no halogen gasses ...

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Номер записи: 17
03-01-2019 дата публикации

ANTENNA ARRANGEMENT

Номер: US20190006142A1
Автор: STAUBER Siegfried
Принадлежит:

An antenna arrangement on a printed circuit board with at least two magnetic rings and a rectangular ring cross section and lateral magnetic ring surfaces with opposite polarity formed thereby wherein the magnetic ring surfaces are arranged on the printed circuit board with a distance from one another using a spacer, wherein the opposite polarities of the magnetic ring surfaces are oriented towards each other and the central bore holes of the magnetic ring form a pass through bore hole through a bore hole in the spacer. This antenna arrangement is configured for a material detector device which detecting predetermined materials over a distance. The antenna arrangement is infinitely expandable in its operation by increasing the number of the magnetic rings and of the respective spacers. Being compact the antenna arrangement easily integrates into existing devices and can be produced in a cost effective manner. 1. An antenna arrangement for a material detecting device for locating objects made from a particular predeterminable material by emitting an ion beam and receiving a returning ion beam that is reflected by the object , wherein properties of the material to be detected cause a reflection of the ion beam , the antenna arrangement comprising:a printed circuit board at least configured for receiving electronic circuits and components of an antenna circuit; andan antenna and electrical connection conductors to the antenna,wherein the antenna emits and receives the ion beam and the antenna circuit generates a transmission signal and processes a return signal,wherein the antenna includes at least two magnetic rings with a rectangular ring cross section and lateral magnetic ring surfaces thus formed with opposite polarity forming electrodes which are arranged on the printed circuit board by at least one spacer including a bore hole at a distance from one another,wherein opposite polarities of the magnetic ring surfaces are oriented towards one another and the central ...

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Номер записи: 18
03-01-2019 дата публикации

APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY

Номер: US20190006149A1
Автор: Biloiu Costel, Campbell Christopher, Gilchrist Glen, Hertel Richard John, Kontos Alex, Liang Shurong, Singh Vikram
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber. 1. A method of treating a substrate , comprising:extracting a plasma beam from a plasma, wherein the plasma beam comprises ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; anddirecting a reactive gas from a gas source to the substrate, wherein the reactive gas does not pass through the plasma.2. The method of claim 1 , wherein the directing the reactive gas comprises providing a gas comprising a polar molecule to the substrate claim 1 , wherein the ions are inert gas ions that sputter etch a metal species from a metal layer disposed on the substrate claim 1 , and wherein the polar molecule forms a volatile etch product with the metal species.3. The method of claim 2 , wherein the directing the reactive gas comprises forming a conformal coating derived from the reactive gas on the metal layer.4. The method of claim 2 , wherein the substrate comprises at least one surface feature having a sidewall claim 2 , wherein the reactive gas and plasma beam etch the metal layer without redeposition of material from the metal layer on the sidewall.5. The method of claim 2 , wherein the reactive gas comprises a polar molecule claim 2 , wherein the metal comprises at least one of Ta claim 2 , Pt claim 2 , Ru claim 2 , Ti claim 2 , Cu claim 2 , Fe claim 2 , and Co.6. A method of treating a substrate claim 2 , comprising:extracting a plasma beam from a plasma in a ...

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Номер записи: 19
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008332A1
Автор: Groholski Alexander, Hill Raymond, Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip. 1. A gas field ion source , comprising:a gun housing,an electrically conductive gun can base attached to the gun housing,an inner tube mounted to the gun can base, the inner tube comprising an electrically isolating material,an electrically conductive tip attached to the inner tube,an outer tube mounted to the gun can base, the outer tube comprising an electrically isolating material, andan extractor electrode attached to the outer tube, the extractor electrode having an opening for the passage of ions generated in proximity to the electrically conductive tip.2. The gas field ion source of claim 1 , further comprising a gas supply comprising a terminating tube attached to the gun can base.3. The gas field ion source of claim 2 , wherein the gas supply is configured to supply a first gas in a first mode of operation of the gas field ion source claim 2 , the gas supply is configured to supply a second gas in a second mode of operation claim 2 , and the first gas is different from the second gas.4. The gas field ion source of claim 2 , further comprising a vacuum pump operatively connected to the outer housing claim 2 , wherein the vacuum pump is configured to evacuate gas out of the outer housing.5. The gas field ion source of claim 1 , further comprising a thermal conductor connected to gun can base claim 1 , wherein the thermal conductor is thermally connected to a cooling ...

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Номер записи: 20
08-01-2015 дата публикации

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

Номер: US20150008333A1
Автор: Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100° C. 1. A method , comprising: an external housing,', 'an internal housing within the external housing,', 'an electrically conductive tip within the internal housing,', 'a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing, and', 'an extractor electrode having a hole configured to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, and, 'providing a gas field ion beam system, comprisingregularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature above 100° C.2. The method of claim 1 , wherein claim 1 , after heating the external housing claim 1 , the internal housing claim 1 , the electrically conductive tip claim 1 , the tube and the extractor electrode claim 1 , continuing to heat the electrically conductive tip while cooling the internal housing claim 1 , the tube and the extractor electrode to a cryogenic temperature.3. The method of claim 2 , further comprising cooling the external housing to room temperature before cooling the internal housing claim 2 , the tube and the extractor electrode to ...

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Номер записи: 21
08-01-2015 дата публикации

CHARGED PARTICLE BEAM SYSTEM AND METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM

Номер: US20150008342A1
Автор: Conners Robert, DiManna Mark D., Groholski Alexander, Hill Raymond, IV John A., Notte
Принадлежит:

The present disclosure relates to a charged particle beam system comprising a charged particle beam source, a charged particle column, a sample chamber, a plurality of electrically powered devices arranged within or at either one of the charged particle column, the charged particle beam source and the sample chamber, and at least one first converter to convert an electrical AC voltage power into an electrical DC voltage. The first converter is positioned at a distance from either of the charged particle beam source, the charged particle column and the charged particle chamber, and all elements of the plurality of electrically powered devices, when operated during operation of the charged particle beam source, are configured to be exclusively powered by the DC voltage provided by the converter. 1. A charged particle beam system , comprising:a charged particle beam source,a charged particle column,a sample chamber,a plurality of electrically powered devices arranged within or at a member selected from the group consisting of the charged particle column, the charged particle beam source and the sample chamber,a first converter configured to convert an electrical AC voltage power into an electrical DC voltage, the first converter is positioned at a distance from a member selected from the group consisting of the charged particle beam source, the charged particle column and the charged particle chamber, and', 'all elements of the plurality of electrically powered devices are configured so that, when operated during operation of the charged particle beam source, they are exclusively powered by the DC voltage provided by the converter., 'wherein2. The charged particle beam system of claim 1 , wherein a smallest distance between the first converter and each of the charged particle beam source claim 1 , the charged particle column claim 1 , and the sample chamber is at least 2 meters.3. The charged particle beam system of claim 1 , further comprising a second converter ...

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Номер записи: 22
15-01-2015 дата публикации

SWITCHABLE ION GUN WITH IMPROVED GAS INLET ARRANGEMENT

Номер: US20150014275A1
Автор: BARNARD Bryan
Принадлежит:

A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms, comprising: 1. A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms , comprising:a source chamber having a first gas inlet;a gas expansion nozzle for producing gas clusters in the presence of gas atoms by expansion of a gas from the source chamber through the nozzle;an ionisation chamber for ionising the gas clusters and gas atoms; wherein the ionisation chamber has a second gas inlet for admitting gas directly into the ionisation chamber to form ionised gas atoms; anda variable mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms.2. A switchable ion gun as claimed in wherein the first and second gas inlets are controlled to allow gas through only one of the inlets at a time claim 1 , wherein the first inlet is operated to allow gas through in the cluster mode and the second inlet is operated to allow gas through directly into the ionisation chamber in the atomic mode.3. A switchable ion gun as claimed in wherein the variable mass selector is a magnetic sector or a Wien filter.4. A switchable ion gun as claimed in wherein the variable mass selector comprises a magnetic variable mass selector and an electrically floating ion optical device for adjusting the energy of the ions within the magnetic variable mass selector.5. A switchable ion gun as claimed in wherein the electrically floating ion optical device comprises an electrically floating flight tube and wherein the magnetic variable mass selector ...

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Номер записи: 23
14-01-2016 дата публикации

ION IMPLANTER AND METHOD OF CONTROLLING THE SAME

Номер: US20160013014A1
Автор: Kagawa Tadanobu, Kurose Takeshi, Yumiyama Toshio
Принадлежит:

An ion implanter includes a high-voltage power supply, a control unit that generates a command signal controlling an output voltage of the high-voltage power supply, an electrode unit to which the output voltage is applied, and a measurement unit that measures an actual voltage applied to the electrode unit. The control unit includes a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage, a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes or close to the target voltage, and a command section that brings to the high-voltage power supply a synthetics command signal which is produced by synthesizing the first command signal and the second command signal. 1. An ion implanter comprising:a high-voltage power supply;a control unit that generates a command signal controlling an output voltage of the high-voltage power supply;an electrode unit to which the output voltage is applied; anda measurement unit that measures an actual voltage applied to the electrode unit,whereinthe control unit includes:a first generation section that generates a first command signal for allowing the high-voltage power supply to output a target voltage;a second generation section that generates a second command signal for complementing the first command signal so that the actual voltage measured by the measurement unit becomes the target voltage or a voltage close to the target voltage; anda command section that brings to the high-voltage power supply a synthetic command signal which is produced by synthesizing the first command signal and the second command signal.2. The ion implanter according to claim 1 , whereineach of the first generation section and the second generation section includes a D/A (Digital to Analog) converter that converts a digital command value into an analog command ...

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Номер записи: 24
11-01-2018 дата публикации

CONTINUOUS ION BEAM KINETIC ENERGY DISSIPATER APPARATUS AND METHOD OF USE THEREOF

Номер: US20180012727A1
Автор: Amato Mark R., Lee W. Davis
Принадлежит:

The invention comprises a method and apparatus for slowing positively charged particles, comprising the steps of: (1) transporting the positively charged particles from an accelerator, along a beam transport line, and into a nozzle system; (2) placing a first liquid in a first chamber in a beam path of the positively charged particles; (3) placing a second liquid in a second chamber in the beam path of the positively charged particles; (4) moving the first and second chamber with the nozzle system; (5) slowing the positively charged particles using the first liquid and the second liquid; (6) moving the first chamber in a first direction to yield a longer first pathlength of the positively charged particles through the first chamber; and (7) moving the second chamber opposite the first direction to yield a longer second pathlength of the positively charged particles through the second chamber. 1. An apparatus for reducing positively charged particles , comprising:an accelerator configured to deliver the positively charged particles along a beam transport line into a nozzle system, said nozzle system comprising:a first chamber configured to hold a first liquid in a beam path of the positively charged particles;a second chamber configured to hold a second liquid in the beam path of the positively charged particles; anda computer controlled motor configured to move said first chamber and said second chamber with said nozzle system,wherein the first liquid and the second liquid reduce the kinetic energy of the positively charged particles during use.2. The apparatus of claim 1 , further comprising:a first beam path, comprising a first pathlength, from a beam entrance side of said first chamber to a beam exit side of said first chamber; anda second beam path, comprising a second pathlength, from an incident side of said second chamber to an egress side of said second chamber.3. The apparatus of claim 2 , further comprising:a common fluid reserve tank connected with a ...

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Номер записи: 25
21-01-2016 дата публикации

IN-SITU MONITORING OF FABRICATION OF INTEGRATED COMPUTATIONAL ELEMENTS

Номер: US20160018818A1
Автор: Freese Robert Paul, Gardner Richard Neal, Jones Christopher Michael, Perkins David L.
Принадлежит: Halliburton Energy Services, Inc.

Techniques include receiving a design of an integrated computational element (ICE), the ICE design including specification of a substrate and a plurality of layers, their respective target thicknesses and complex refractive indices, complex refractive indices of adjacent layers being different from each other, and a notional ICE fabricated in accordance with the ICE design being related to a characteristic of a sample; forming at least some of the plurality of layers of the ICE in accordance with the ICE design; performing at least two different types of in-situ measurements; predicting, using results of the at least two different types of in situ measurements, performance of the ICE relative to the ICE design; and adjusting the forming of the layers remaining to be formed, at least in part, by updating the ICE design based on the predicted performance.

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Номер записи: 26
03-02-2022 дата публикации

INSULATOR FOR AN ION IMPLANTATION SOURCE

Номер: US20220037115A1
Автор: CHIEN Fang-Chi, JAO Jui-Feng, Lin Sheng-Chi, Lin Tsung-Min, TANG Lung-Yin
Принадлежит:

An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source. 1. An insulator for an ion implantation source , comprising: a first plurality of guide walls,', 'a first plurality of channels formed by the first plurality of guide walls,', 'a core member; and, 'a first portion, comprising a second plurality of guide walls, and', 'wherein a combination of the first plurality of guide walls, the first plurality of channels, the second plurality of guide walls, and the second plurality of channels form a third channel to the core member when the core member is at least partially inserted into the second portion.', 'a second plurality of channels formed by the second plurality of guide walls,'}], 'a second portion, comprising2. The insulator of claim 1 , wherein the first plurality of guide walls are a first plurality of concentric guide walls;wherein the first plurality of channels are a first plurality of concentric channels;wherein the second plurality of guide walls are a second plurality of concentric guide walls; andwherein the second plurality of channels are a second plurality of concentric channels.3. The insulator of claim 1 , wherein the third channel is formed when at least a subset of the first plurality of guide walls are at least partially inserted into at least a ...

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Номер записи: 27
17-04-2014 дата публикации

ION GENERATION APPARATUS AND ELECTRIC EQUIPMENT USING THE SAME

Номер: US20140103793A1
Автор: IZU Koichi, Nishida Hiromu
Принадлежит: SHARP KABUSHIKI KAISHA

In this ion generation apparatus, tip end portions of needle electrodes are aligned in an X direction with being oriented in a Z direction, and protrude from a casing. A protective cover covers the tip end portions of the needle electrodes. The protective cover is provided with holes opened to allow tip ends of the needle electrodes to be seen from the Z direction, and an opening opened to allow the needle electrodes to be seen from a Y direction. Therefore, ions generated at the tip end portions of the needle electrodes can be emitted efficiently out of the casing. Further, a user can be prevented from touching the tip end portion of the needle electrode and injuring his or her finger or the like. 1. An ion generation apparatus generating ions including a plurality of needle electrodes , comprising:a substrate having said plurality of needle electrodes mounted thereon;a casing accommodating said substrate, said plurality of needle electrodes having tip end portions aligned in an X direction with being oriented in a Z direction, and protruding from said casing; anda protective cover covering the tip end portions of said plurality of needle electrodes,said protective cover being provided with a plurality of first holes opened to allow tip ends of said plurality of needle electrodes to be seen from the Z direction, respectively, and a first opening opened to allow said plurality of needle electrodes to be seen from a Y direction.2. The ion generation apparatus according to claim 1 , further comprising a lid member closing said casing so as to cover said substrate claim 1 , whereinsaid lid member is provided with a second hole opened at a position corresponding to each needle electrode, a top plate provided to face said lid member and having said plurality of first holes opened therein, and', 'support members provided between said top plate and said lid member and having said first opening opened therein, and, 'said protective cover includes'}the tip end portion of ...

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Номер записи: 28
18-01-2018 дата публикации

CHARGED PARTICLE INSTRUMENTS

Номер: US20180019095A1
Автор: PETO Lloyd
Принадлежит:

An apparatus is disclosed for use in a charged particle instrument which defines an inner volume therein. The apparatus comprises an adaptor () having a first portion adapted for attachment to a part () of a gas injection system () of a charged particle instrument which is located within an inner volume of such an instrument; and a second portion arranged to receive a tool () adapted for interaction with a sample () located in the inner volume of such an instrument. 1. An adaptor for attachment to a nozzle of a gas injection system provided in an inner volume of a charged particle instrument , the adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which part nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a second portion adapted to receive a tool adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of further additional apparatus within the inner volume.2. A sample interaction apparatus for a charged particle instrument which defines an inner volume therein , the apparatus comprising: an adaptor having a first portion adapted for releasable attachment to a nozzle of a gas injection system of a charged particle instrument , which nozzle is located within an inner volume of such an instrument , and is operable to provide a gas injection function for the charge particle instrument concerned; and a tool attached to a second portion of the adaptor , the tool being adapted for interaction with a sample located in the inner volume of such an instrument , wherein the adaptor provides the tool within the inner volume in addition to the nozzle of such a gas injection system without the provision of ...

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Номер записи: 29
16-01-2020 дата публикации

Dynamic Electron Impact Ion Source

Номер: US20200020502A1
Автор: Chen Tong, Welkie David G.
Принадлежит:

An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field. 1. A system comprising: a first input port;', 'a second input port different from the first input port;', 'an exit port;', 'a magnetic field generator configured to generate a magnetic field within the ion source chamber;', 'a first electric field generator configured to generate a first electric field within the ion source chamber;', 'a second electric field generator configured to generate a second electric field within the ion source chamber;, 'an ion source chamber comprising receive gas-phase neutral species through the first input port;', 'receive a flow of electrons through the second input port;', 'guide the electrons through the ion source chamber using the magnetic field generator;', 'generate ions in an ionization region within the ion source chamber through an interaction between the gas-phase neutral species and the electrons; and', 'focus and accelerate at least some of the ions from the ion source chamber through the exit port along an ion beam axis using the first electric field generator;', 'wherein the second electric field generator is configured to reduce or eliminate an influence of the magnetic field on at least some of the ions accelerated from the ion source., 'wherein the ion source chamber is configured, ...

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Номер записи: 30
21-01-2021 дата публикации

ION IMPLANTATION SYSTEM WITH MIXTURE OF ARC CHAMBER MATERIALS

Номер: US20210020402A1
Автор: Byl Oleg, Despres Joseph R., Sweeney Joseph D., Tang Ying, Yedave Sharad N.
Принадлежит:

A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance. 1. An ion implantation system for implanting one or more ionic species into a substrate , the system comprising:a gas source comprising an ionizable gas or gas mixture containing at least one ionizable gas; andan arc chamber comprising at least a first arc chamber material and a second arc chamber material, wherein the first and second arc chamber materials are different,wherein the arc chamber comprises arc chamber walls having interior-plasma facing surfaces and at least one of one or more arc chamber liners, a sputtering target disposed in the arc chamber, or a combination thereof, wherein the first and second arc chamber materials are present in the arc chamber walls, in the one or more arc chamber liners disposed in the arc chamber, a target disposed in the arc chamber, or a combination thereof.2. The system of claim 1 , wherein the arc chamber walls comprise the first arc chamber material claim 1 , the first arc chamber material comprising tungsten claim 1 , and wherein the second arc chamber material includes any one of boron claim 1 , boron nitride claim 1 , boron oxide claim 1 , tungsten boride claim 1 , or boron carbide.3. The system of claim 2 , wherein the second arc chamber material is coated onto or surface graded into claim 2 , a ...

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Номер записи: 31
21-01-2021 дата публикации

Ion generator and ion implanter

Номер: US20210020403A1
Автор: Hiroki Murooka
Принадлежит: Sumitomo Heavy Industries Ion Technology Co Ltd

There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.

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Номер записи: 32
28-01-2016 дата публикации

CLOSED DRIFT MAGNETIC FIELD ION SOURCE APPARATUS CONTAINING SELF-CLEANING ANODE AND A PROCESS FOR SUBSTRATE MODIFICATION THEREWITH

Номер: US20160027608A1
Автор: Madocks John
Принадлежит:

A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided. 115-. (canceled)16. An apparatus for deposition of a film onto a surface of a substrate comprising:a first closed drift ion source having an electrically isolated first anode electrode and other components comprising ferromagnetic cathode poles and magnets that form a closed drift magnetic field, said other components being grounded or supporting an electrical float voltage;a power supply for selectively powering said first anode electrode with a charge bias with a positive charge bias duration and a negative charge bias duration; andan electron emitter supplying electrons to said first anode electrode when the first electrode charge bias is positive.17. The apparatus of wherein the closed drift magnetic field passes through at least one of said other components.18. The apparatus of wherein said electron emitter is a second closed drift ion source having a second anode electrode with a second electrode charge bias that is opposite the first electrode charge bias during ion formation and repeat ion formation to support a second closed drift ion source ...

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Номер записи: 33
24-04-2014 дата публикации

ION SOURCE DEVICE AND METHOD FOR PROVIDING ION SOURCE

Номер: US20140110598A1
Автор: DONG CHUNRONG, SHAN LEON, WU LULEI
Принадлежит: Semiconductor Manufacturing International (Shanghai) Corporation

Various embodiments provide an ion source device and a method for providing the ion source. An exemplary ion source device can include an arc chamber, a filament, a reflector, a slit outlet, a source gas inlet, and/or a cleaning gas inlet. The filament can be configured to generate thermo-electrons in the arc chamber. The reflector can be configured to reflect the thermo-electrons back to the arc chamber. The slit outlet can be configured to exit a gaseous material out of the arc chamber. The source gas inlet and the cleaning gas inlet can be located on a same sidewall of the arc chamber configured to respectively introduce an ion source gas and an inert cleaning gas into the arc chamber. 1. An ion source device of an ion implanter , comprising:an arc chamber;a filament located on a first sidewall of the arc chamber and configured to generate thermo-electrons in the arc chamber;a reflector located on a second sidewall of the arc chamber opposite to the first sidewall and configured to reflect the thermo-electrons back to the arc chamber;a slit outlet located on a top of the arc chamber and configured to exit a gaseous material out of the arc chamber;a source gas inlet located on a third sidewall of the arc chamber and configured to introduce an ion source gas into the arc chamber, wherein the third sidewall is between the first sidewall and the second sidewall; anda cleaning gas inlet located on the third sidewall of the arc chamber and configured to introduce an inert cleaning gas into the arc chamber.2. The device of claim 1 , wherein the inert cleaning gas includes argon claim 1 , helium claim 1 , or a combination thereof.3. The device of claim 1 , wherein a straight-line distance between the cleaning gas inlet and the filament is greater than a straight-line distance between the source gas inlet and the filament.4. The device of claim 3 , wherein the straight-line distance between the cleaning gas inlet and the source gas inlet ranges from about 40 mm to about ...

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Номер записи: 34
29-01-2015 дата публикации

METHODS OF ION SOURCE FABRICATION

Номер: US20150028221A1
Автор: Chun Richard K., Lee Wai Tak
Принадлежит: HAMILTON SUNDSTRAND CORPORATION

A method of ion source fabrication for a mass spectrometer includes simultaneously forming aligned component portions of an ion source using direct metal laser fusing of sequential layers. The method can further include forming the component portions on a base plate made from a ceramic material by applying fused powder to the base plate to build the component portions thereon. 1. A method of ion source fabrication for a mass spectrometer , comprising the steps of:additively forming aligned component portions of an ion source.2. The method of claim 1 , wherein the step of forming further includes direct metal laser fusing of sequential layers.3. The method of claim 2 , wherein the step of forming further includes forming the component portions on a base plate made from a ceramic material.4. The method of claim 3 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.5. The method of claim 4 , wherein the step of forming further includes welding at least one component portion to the base plate.6. The method of claim 4 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component portions.710-. (canceled)11. A method of ion source fabrication for a mass spectrometer claim 4 , comprising the steps of:additively forming aligned component portions of an ion source on a base plate made from a ceramic material.12. The method of claim 11 , wherein the step of forming further includes applying fused powder to the base plate to build the component portions thereon.13. The method of claim 12 , wherein the step of forming further includes welding at least one component portion to the base plate.14. The method of claim 12 , wherein the step of forming further includes coupling at least one component portion to the base plate using screws through a surface of the base plate opposite the component ...

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Номер записи: 35
01-02-2018 дата публикации

CHARGED PARTICLE BEAM APPARATUS

Номер: US20180033587A1
Автор: ENYAMA Momoyo, SHIRASAKI Yasuhiro, Tsuno Natsuki
Принадлежит:

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch. 1. A charged particle beam apparatus , comprising:a charged particle source;a stage on which a sample is placed;a charged particle optical system configured to irradiate the sample with a charged particle beam generated in the charged particle source;a separator which is inserted in the charged particle optical system and deflects a traveling direction of the charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system;a charged particle beam irradiation switch configured to absorb the charged particle beam deflected out of the optical axis of the charged particle optical system or reflect the charged particle beam toward the separator, anda control device configured to control the charged particle beam irradiation switch.2. The charged particle beam apparatus according to claim 1 ,wherein, the charged particle beam irradiation switch has a charged particle beam reflection control electrode, and{'sub': 0', 'on', '0', 'off', '0, 'when a voltage such that velocity energy of the charged particle beam traveling in a direction of the charged particle beam reflection control electrode becomes zero is denoted by |V|, the control device controls ...

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Номер записи: 36
04-02-2021 дата публикации

APPARATUS AND SYSTEM HAVING EXTRACTION ASSEMBLY FOR WIDE ANGLE ION BEAM

Номер: US20210035779A1
Автор: Biloiu Costel, Campbell Christopher, Rockwell Tyler, SINCLAIR Frank, Thomas Appu Naveen
Принадлежит: Applied Materials, Inc.

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture. 1. An ion beam processing apparatus comprising:a plasma chamber;a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture;a beam blocker, disposed within the plasma chamber and facing the extraction aperture;a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; andan extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.2. The ion beam processing apparatus of claim 1 , wherein the plasma plate comprises an electrical insulator body claim 1 , and the beam blocker comprises an electrical insulator body.3. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a first dielectric coating claim 1 , surrounding an electrically conductive inner electrode claim 1 , and wherein the extraction plate comprises a second dielectric coating claim 1 , disposed on an electrically conductive inner plate portion.4. The ion beam processing apparatus of claim 1 , wherein the non-planar electrode comprises a triangular shape in cross-section along a first direction claim 1 , the first direction being perpendicular to a plane of the plasma plate.5. The ion beam processing apparatus of claim 1 , wherein the extraction plate is movable with respect to the plasma plate claim 1 , along a first direction claim 1 , the first ...

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Номер записи: 37
11-02-2016 дата публикации

GCIB NOZZLE ASSEMBLY

Номер: US20160042909A1
Автор: Becker Robert K., FREYTSIS Avrum, GWINN Matthew C.
Принадлежит:

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle. 1. A nozzle assembly for use in a gas cluster beam (GCB) processing system , comprising:a gas supply manifold having at least one gas supply conduit;a first nozzle component through which a first portion of at least one conical nozzle is formed that extends from a nozzle throat at a first entry surface to an intermediate exit at a first exit surface;a second nozzle component through which a second portion of said at least one conical nozzle extends from an intermediate inlet at a second entry surface to a nozzle exit at a second exit surface, said second nozzle component further including a re-entrant cavity into which said first nozzle component inserts such that said first exit surface mates with said second entry surface, and said first nozzle portion aligns with said second nozzle portion to form said conical nozzle; anda sealing member disposed between said first nozzle component and said gas supply manifold such that when said second nozzle component is attached to said gas supply manifold, said first entry surface of said first nozzle component presses against said sealing member and creates a seal with said gas supply manifold surrounding an outlet of said at least one gas supply conduit.2. The assembly of claim 1 , wherein said first nozzle component is a monolithic piece composed of ceramic.3. The assembly of claim 1 , wherein said second nozzle ...

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Номер записи: 38
18-02-2016 дата публикации

Enriched silicon precursor compositions and apparatus and processes for utilizing same

Номер: US20160046849A1
Автор: James J. Mayer, Joseph D. Sweeney, Richard S. Ray, Robert Kaim
Принадлежит: Entegris Inc

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28 Si, 29 Si, and 30 Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

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Номер записи: 39
06-02-2020 дата публикации

ION BEAM TREATMENT PROCESS FOR PRODUCING A SCRATCH-RESISTANT HIGH- TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE

Номер: US20200043694A1
Автор: Busardo Denis, Guernalec Frédéric
Принадлежит:

Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: 1. A process for antireflective treatment in the visible region of a material made of sapphire , comprising:bombarding the material with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where:an acceleration voltage is within a range of between 10 and 100 kV;{'sup': 2', '16', '17', '2, 'an implanted dose of ions, expressed in ions/cm, is within a range of between 10and 3×10ions/cm;'}{'sub': 'D', 'a rate of displacement V, expressed in cm/s, is within a range of between 0.1 cm/s and 5 cm/s.'}2. The process according to claim 1 , characterized in that the mixture of mono- and multicharged ions are ions of the elements selected from the group consisting of helium (He) claim 1 , neon (Ne) claim 1 , argon (Ar) claim 1 , krypton (Kr) claim 1 , and xenon (Xe).3. The process according to claim 1 , characterized in that the mixture mono- and multicharged ions are ions of gases selected from the group consisting of nitrogen (N) and oxygen (O).4. The process according to claim 1 , characterized in that the implanted dose claim 1 , expressed in ions/cm claim 1 , is between (5×10)×(M/14)and 10×(M/14) claim 1 , where M is the atomic mass of the ion.5. The process according to claim 1 , characterized in that the rate of displacement V claim 1 , expressed in cm/s claim 1 , is between 0.025×(P/D) and 0.1×(P/D) claim 1 , where P is the power of the beam claim 1 , expressed in W (watts) claim 1 , and D is the diameter of the beam claim 1 , expressed in cm (centimeters).6. The process according to claim 1 , characterized in that a displacement amplitude A of the beam claim 1 , expressed in cm claim 1 , is chosen so that (P/A)>0.04 W/cm claim 1 , where P is the power of the beam claim 1 , expressed in W (watts).7. The process ...

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Номер записи: 40
03-03-2022 дата публикации

IONIC PROPULSION SYSTEM

Номер: US20220063821A1
Автор: Cass William J., Kurfess Gregory H.
Принадлежит:

An ionic propulsion system for an aircraft having an airfoil includes a first conductor and a second conductor, the first conductor and the second conductor being disposed at least partially within the airfoil when not in use. The propulsion system includes an actuator for extending the first conductor and the second conductor from an end of the airfoil such that the first conductor and the second conductor are in the airstream of the aircraft, the first conductor being upstream of the second conductor in the airstream. The propulsion system includes a power supply for supplying current to the first conductor and the second conductor to ionize the air particles in the vicinity of the first conductor and the end of the airfoil to create a flow of the ionized particles from the first conductor toward the second conductor.

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Номер записи: 41
03-03-2022 дата публикации

ION IMPLANTER AND ION SELECTION METHOD

Номер: US20220068588A1
Автор: ANSAI HISAHIRO
Принадлежит:

An ion implanter according to an embodiment of the present disclosure includes: an ion source that includes a plurality of kinds of ions; an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam; an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; and an interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential. 1. An ion implanter comprising:an ion source that includes a plurality of kinds of ions;an extraction electrode that extracts the plurality of kinds of ions from the ion source and generates an ion beam;an ion beam transport tube that transports the ion beam to an object to be irradiated with the ion beam; andan interaction section that is disposed inside the ion beam transport tube, extends substantially parallel to an extending direction of the ion beam transport tube, and is fixed at a predetermined electric potential.2. The ion implanter according to claim 1 , wherein the interaction section changes a trajectory of the ion beam by an interaction between: image charges in the interaction section with respect to the plurality of kinds of ions; and the plurality of kinds of ions.3. The ion implanter according to claim 1 , whereinthe ion beam includes a first ion having a first mass m1 and a first charge number q1, and a second ion having a second mass m2 and a second charge number q2, and{'sup': 2', '2, 'the interaction section causes a first trajectory of the first ion and a second trajectory of the second ion to differ from each other in accordance with a difference between m1/(q1)and m2/(q2).'}4. The ion implanter according to claim 3 , further comprisinga slit that causes the first ion to pass through and shields the second ion.5. The ion implanter according to claim 1 , wherein the ...

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Номер записи: 42
25-02-2021 дата публикации

METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER

Номер: US20210057182A1
Автор: Satoh Shu
Принадлежит:

Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece. 1. A high energy ion implantation system , comprising:an ion beam source configured to generate an ion beam comprising a plurality of ions along a beamline;a mass analyzer configured to mass analyze the ion beam;a first RF accelerator configured to receive the ion beam from the mass analyzer, wherein the plurality of ions are at an initial energy and an initial charge state, wherein the first RF accelerator is further configured to accelerate the plurality of ions to a first energy at the initial charge state;an electron stripper positioned downstream of the first RF accelerator and configured to receive the plurality of ions at the initial charge state and first energy and to convert the plurality of ions to a plurality of charge states at the first energy;a charge selector positioned downstream of the electron stripper and configured to select a final charge state at the first energy from the plurality of charge states of the plurality of ions;a second RF accelerator positioned downstream of the charge selector and configured to accelerate the plurality of ions to a final energy spectrum at the final charge state; anda final energy filter positioned downstream of the second RF accelerator and configured to purify the plurality of ...

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Номер записи: 43
23-02-2017 дата публикации

METHODS AND APPARATUS FOR ION SOURCES, ION CONTROL AND ION MEASUREMENT FOR MACROMOLECULES

Номер: US20170053775A1
Автор: Hieke Andreas
Принадлежит:

Disclosed are methods, apparatus, systems, processes and other inventions relating to: ion sources with controlled electro-pneumatic superposition, ion source synchronized to RF multipole, ion source with charge injection, optimized control in active feedback system, radiation supported charge-injection liquid spray, ion source with controlled liquid injection as well as various embodiments and combinations of each of the foregoing. 1. (canceled)2. A method of generating ions from sample molecules for analysis comprising:positioning proposed sample molecules in communication with a sample carrying substance, said substance positioned in at least partially electrically conductive relationship with an electric potential, subjecting at least a portion of said sample molecules to a low molecular weight ion beam suitable to generate ions from at least some of said sample molecules.3. The method of claim 1 , wherein said generated ions stem from sample molecules comprising biological macromolecules.4. The method of claim 1 , wherein said subjecting step comprises subjecting at least a portion of said sample molecules to a low molecular weight ion beam suitable to generate ions from at least some of said sample molecules whereby ions for analysis are generated from said sample molecules.5. A device for generating ions from sample molecules claim 1 , the device comprising:a plurality of sample molecules disposed in communication with a body having an at least partially electrically conductive relationship with an electric potential, anda source of low molecular ions disposed in position to expose at least a portion of said plurality of sample molecules to a low molecular weight ion beam of suitable energy to generate ions from said portion.6. The device of claim 4 , further comprising claim 4 ,at least one ion optical element for scanning said low molecular weight ion beam across at least said portion of said plurality of sample molecules.7. The device of claim 4 , wherein ...

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Номер записи: 44
23-02-2017 дата публикации

APPARATUS AND METHOD FOR GENERATING HIGH CURRENT NEGATIVE HYDROGEN ION BEAM

Номер: US20170053776A1
Автор: Bassom Neil, Lee W. Davis, Renau Anthony
Принадлежит:

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive Hgas; a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and an extraction assembly arranged to extract the H ions from the ion source chamber. 1. An apparatus to generate negative hydrogen ions , comprising:{'sub': '2', 'an ion source chamber having a gas inlet to receive Hgas;'}{'sub': 2', '2, 'a light source directing radiation into the ion source chamber to generate excited Hmolecules having an excited vibrational state from at least some of the Hgas;'}{'sup': '−', 'sub': '2', 'a low energy electron source directing low energy electrons into the ion source chamber, wherein H ions are generated from at least some of the excited Hmolecules; and'}{'sup': '−', 'an extraction assembly arranged to extract the H ions from the ion source chamber, wherein the light source is embedded at least partially in a wall of the ion source chamber, or is disposed within the ion source chamber.'}2. The apparatus of claim 1 , the light source extending along a first side of the ion source chamber and along a second side of the ion source chamber.3. The apparatus of claim 1 , the low energy electron source extending along a third side of the ion source chamber and along a fourth side of the ion source chamber.4. The apparatus of claim 1 , the light source generating radiation having an energy of at least 1.5 eV.5. The apparatus of claim 1 , the light source comprising radiation having a photon energy of 1.5 eV to 5.0 eV.6. The apparatus of claim 1 , the light source comprising a light-emitting diode claim 1 , a laser claim 1 , or a broad spectrum light source generating photons having ...

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Номер записи: 45
13-02-2020 дата публикации

Ion Source Thermal Gas Bushing

Номер: US20200051773A1
Автор: Chaney Craig R., McLaughlin Adam M.
Принадлежит:

A system for reducing clogging and deposition of feed gas on a gas tube entering an ion source chamber is disclosed. To lower the overall temperature of the gas tube, a gas bushing, made of a thermally isolating material, is disposed between the ion source chamber and the gas tube. The gas bushing is made of a thermally isolating material, such as titanium, quartz, boron nitride, zirconia or ceramic. The gas bushing has an inner channel in fluid communication with the ion source chamber and the gas tube to allow the flow of feed gas to the ion source chamber. The gas bushing may have a shape that is symmetrical, allowing it to be flipped to extend its useful life. In some embodiments, the gas tube may be in communication with a heat sink to maintain its temperature. 1. A system for delivering feed gas to an ion source , comprising:a gas tube, having an inner channel in fluid communication with a dopant source; anda gas bushing, having an inner channel in fluid communication with the inner channel of the gas tube and an ion source chamber, wherein the gas bushing has a thermal conductivity of less than 30 W/m K.2. The system of claim 1 , wherein the gas tube is linear.3. The system of claim 2 , further comprising an elbow joint disposed between the gas tube and the gas bushing claim 2 , the elbow joint having an inner channel in fluid communication with the inner channel of the gas tube and the inner channel of the gas bushing.4. The system of claim 3 , wherein the gas bushing has an inner surface in communication with the ion source chamber and an outer surface forming an interface with the elbow joint claim 3 , and wherein a shape of the gas bushing is symmetrical such that the gas bushing can be flipped claim 3 , wherein when flipped claim 3 , the inner surface becomes the outer surface.5. The system of claim 3 , wherein the gas bushing and the elbow joint have interlocking features to allow attachment of the gas bushing to the elbow joint.6. The system of claim 2 ...

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Номер записи: 46
05-03-2015 дата публикации

System for Generating High Speed Flow of an Ionized Gas

Номер: US20150061496A1
Автор: Gram Glenn D., Hanna James L.
Принадлежит:

The invention relates to a system for generating an ion stream which may be useful for various applications. In one application, the ion stream may be used to excite nano-spheres. In another application, the ion stream may be used for sterilization and therapy in accordance with the teachings of the invention. 1. An ion generating system comprising:driver electronics for generating an AC supply;an ion source system including a primary coil connected to the driver electronics, a secondary coil coaxially positioned within the primary coil, and conductive connectors connected to the secondary coil;a conduit having a first end extending from the ion generating system, and conductive connections passing from the secondary coil through an internal passage of the conduit;a nozzle affixed to a second end of the conduit, anda gas source supplying gas to an inlet end of the nozzle, gas flowing into the nozzle ionized while passing through the nozzle and outward through an outlet end of the nozzle under the influence of an electric field produced by the secondary coil, the electric field transferred into the nozzle via the conductive connector.2. The system according to claim 1 , wherein the secondary coil is configured to generate a frequency and voltage configured to oscillate at a natural frequency of a metallic substance in a medium.3. The system according to claim 1 , wherein the conductive connector comprises a first and second supply wire claim 1 , the first and second supply wire conductively connected to a first end of the secondary coil.4. The system according to claim 3 , wherein the nozzle comprises a conductive rod conductively connected to a second end of the first supply wire.5. The system according to claim 4 , wherein the nozzle comprises a ring aligned with the conductive rod such that a longitudinal axis of the conductive rod passes centrally through an opening inside the ring.6. The system according to claim 5 , wherein the conductive rod is needle like in ...

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Номер записи: 47
20-02-2020 дата публикации

IMPLANTER CALIBRATION

Номер: US20200058465A1
Автор: LEE CHENG-EN, Lin Yi-Hsiung, LIU Hsuan-Pang, OU Chia-Lin, YEH Yao-Jen
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship. 1. A method , comprisinggenerating ions, with an ion source of anion implantation apparatus, based on an ion implantation recipe;accelerating the generated ions based on an ion energy setting in the ion implantation recipe;determining an energy spectrum of the accelerated ions;analyzing a relationship between the determined energy spectrum and the ion energy setting; andadjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.2. The method of claim 1 , wherein the at least one parameter comprises a beam control current of the FEM.3. The method of claim 1 , further comprising determining a peak energy of the determined energy spectrum.4. The method of claim 3 , wherein the relationship comprises a difference between the peak energy and the ion energy setting.5. The method of claim 4 , wherein the adjusting the at least one parameter comprises adjusting the at least one parameter such that the difference between the peak energy and the ion energy setting is less than a predetermined value.6. The method of claim 5 , wherein the predetermined value comprises an energy difference of about 1% of the ion energy setting.7. The method of claim 5 , wherein the predetermined value comprises an energy difference of about 3% of the ion energy setting.8. The method of claim 5 , wherein the predetermined ...

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Номер записи: 48
02-03-2017 дата публикации

LIGHT BATH FOR PARTICLE SUPPRESSION

Номер: US20170062173A1
Автор: Lee William Davis
Принадлежит:

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm. 1. An apparatus for reducing an amount of non-positively charged particles in an ion beam , comprising:a light source, disposed on one side of the ion beam and emitting light at a wavelength sufficiently short so as to ionize non-positively charged particles into positively charged particles; anda positively biased electrode downstream from the light source, to repel the positively charged particles, wherein the ion beam is directed toward a workpiece after exposure to the light source.2. The apparatus of claim 1 , wherein the wavelength is less than 250 nm.3. The apparatus of claim 1 , wherein the wavelength is less than 200 nm.4. The apparatus of claim 1 , further comprising a light sink to absorb light emitted by the light source.5. The apparatus of claim 4 , wherein the light sink is disposed on an opposite side of the ion beam from the light source.6. The apparatus of claim 1 , wherein the non-positively charged particles comprise neutral particles.7. The apparatus of claim 1 , wherein the non-positively charged particles comprise negatively charged particles.8. A beamline ion implantation system claim 1 , comprising:an ...

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Номер записи: 49
04-03-2021 дата публикации

System And Method For Improved Beam Current From An Ion Source

Номер: US20210066019A1
Автор: Chang Shengwu, SINCLAIR Frank, St. Peter Michael
Принадлежит:

An IHC ion source that employs a negatively biased cathode and one or more side electrodes is disclosed. The one or more side electrodes are biased using an electrode power supply, which supplies a voltage of between 0 and −50 volts, relative to the chamber. By adjusting the output from the electrode power supply, beam current can be optimized for different species. For example, certain species, such as arsenic, may be optimized when the side electrodes are at the same voltage as the chamber. Other species, such as boron, may be optimized when the side electrodes are at a negative voltage relative to the chamber. In certain embodiments, a controller is in communication with the electrode power supply so as to control the output of the electrode power supply, based on the desired feed gas. 1. An ion source , comprising:a chamber, comprising at least one electrically conductive wall;a cathode disposed on one end of the chamber;a first side electrode disposed on one side wall;an arc power supply to bias the cathode at a negative voltage relative to the electrically conductive wall; andan electrode power supply to bias the first side electrode, where an output of the electrode power supply is between 0 and −50V relative to the electrically conductive wall.2. The ion source of claim 1 , further comprising a controller in communication with the electrode power supply.3. The ion source of claim 2 , wherein the controller varies the output of the electrode power supply based on a feed gas that is used.4. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to 0V if an arsenic-based feed gas is used.5. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to a value between −5V and −50V if a boron-based feed gas is used.6. The ion source of claim 3 , wherein the controller sets the output of the electrode power supply to a value between −8V and −30V if a boron-based feed gas is used.7. The ...

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Номер записи: 50
29-05-2014 дата публикации

Ion Implanter

Номер: US20140145581A1
Автор: Borges Carlos F., Jerez Manuel A.
Принадлежит:

The support and electrode assemblies of the ion implanter are cooled by circulating a coolant through these parts during operation. The support for the arc chamber includes a one piece block of aluminum through which coolant passes and a hollow rectangular post on which the arc chamber sits with a space therebetween. 1. An ion implanter comprisinga one piece support having a flange including an inlet for a flow of coolant and an outlet for an outflow of the coolant and a skeletal block extending perpendicularly from said flange and having a channel communicating with said inlet and said outlet to conduct a flow of coolant therebetween, said channel and extending longitudinally of said skeletal block;a first electrode assembly having a high voltage feedthrough mounted in said flange and a conductor extending from said feedthrough; anda first coolant assembly for cooling said first electrode assembly having a plate secured to said flange concentrically of said feedthrough and having an inlet stub in said plate for a flow of coolant, a first outlet in said plate, a first channel extending through said plate from said inlet stub to said first outlet, a first inlet in said plate for a flow of coolant, an outlet stub in said plate and a second channel extending from said first inlet to said outlet stub to expel coolant therefrom.2. An ion implanter as set forth in further comprising a shielding cover disposed about said conductor adjacent said flange.3. An ion implanter as set forth in further comprising a second electrode assembly having a plate secured to said flange claim 1 , a plurality of insulators secured in spaced apart parallel relation within said plate and a plurality of electrodes claim 1 , each said electrode being secured to and passing through a respective one of said plurality of insulators; anda second coolant assembly for cooling said second electrode assembly and having an inlet for a flow of coolant in said plate of said second electrode assembly, a ...

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Номер записи: 51
28-02-2019 дата публикации

ION GENERATOR AND METHOD FOR USING THE SAME

Номер: US20190066967A1
Автор: CHIU Jen-Chung, KAO Tai-Kun, LEE Ren-Dou, Lin Tsung-Min
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal. 1. An ion generator for an ion implanter , comprising:an ion source arc chamber comprising an arc chamber housing; anda thermal electron emitter coupled to the arc chamber housing, wherein the thermal electron emitter comprises a filament and a cathode,wherein the cathode has a solid top portion made of a work function modified conductive material comprising tungsten (W) and a work function modification metal, and the filament is also made of the work function modified conductive material.2. The ion generator for an ion implanter as claimed in claim 1 , wherein the work function modification metal comprises lanthanum (La) claim 1 , Cerium (Ce) claim 1 , or thorium (Th).3. The ion generator for an ion implanter as claimed in claim 1 , wherein the work function modified conductive material is an alloy of lanthanum and tungsten.4. The ion generator for an ion implanter as claimed in claim 1 , wherein the cathode further comprises a hollow bottom portion connected to the solid top portion claim 1 , and the solid top portion and the hollow bottom portion are made of different materials.5. The ion generator for an ion implanter as claimed in claim 4 , wherein the filament is disposed in a hollow region of the hollow bottom portion of the cathode and is not in physical contact with the cathode.6. (canceled)7. The ion generator for an ion implanter as claimed in claim 1 , wherein a concentration of the work function modification metal in the work function modified conductive material is in a range from about 1.5 vol % to about ...

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Номер записи: 52
15-03-2018 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20180076003A1
Автор: Arestie Steven Mark, Lozano Paulo C.
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. (canceled)2. An electrospray emitter comprising:an emitter body with a base and a tip;a source of ions in fluid communication with the emitter body; anda first electrode electrically connected to the emitter body through the source of ions.3. The electrospray emitter of claim 2 , wherein the source of ions comprises at least one of an ionic liquid and a room-temperature molten salt.4. The electrospray emitter of claim 2 , further comprising a second electrode positioned downstream relative to the emitter body and the first electrode.5. The electrospray emitter of claim 2 , wherein the emitter body is porous.6. The electrospray emitter of claim 5 , wherein at least a portion of the emitter body is disposed in or on the source of ions such that the source of ions is transported by capillarity from the base of the emitter body to the tip of the emitter body.7. The electrospray emitter of claim 5 , wherein when a voltage potential is applied to the source of ions claim 5 , ions are emitted by the emitter body and the source of ions is transported by capillarity from the base of the emitter body to the tip of the emitter body.8. The electrospray emitter of claim 5 , wherein pores of the porous emitter body have a diameter between or equal to about 3 μm and 50 μm.9. The electrospray emitter of claim 2 , wherein the emitter body comprises at least one of a metal claim 2 , a dielectric material claim 2 , and a xerogel.10. The electrospray emitter of claim 2 , wherein a radius of curvature of the emitter ...

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Номер записи: 53
26-03-2015 дата публикации

ION GENERATING APPARATUS

Номер: US20150083931A1
Автор: HARADA Shigeyuki, Kitahira Makoto, Temporin Noriko, Yukawa Shohgo
Принадлежит:

A discharge electrode for generating ions and a high-voltage generating circuit unit that supplies the discharge electrode with a high voltage are housed in a housing . A discharge opening for discharging the generated ions is formed in the housing . The housing is covered by an exterior case . The exterior case is connected to the high-voltage generating circuit unit and functions as an induction electrode. A passage opening leading to the discharge opening is formed in the exterior case . An insulating sheet covers the periphery of the passage opening in the exterior case facing a space into which the ions are discharged so that the discharged ions do not attach to the exterior case . Decrease in the amount of discharged ions can be prevented while using a peripheral component of the discharge electrode as the induction electrode. 1. An ion generating apparatuswherein a discharge electrode for generating ions and a high-voltage generating circuit unit that supplies the discharge electrode with a high voltage are housed in a housing,wherein a discharge opening for discharging the generated ions is formed in the housing,wherein the housing is covered by a shield case,wherein the shield case is connected to the high-voltage generating circuit unit and functions as an induction electrode, andwherein the outer surface of the shield case facing a space into which the ions are discharged is covered by an insulating section so that the discharged ions do not attach to the shield case.2. The ion generating apparatus according to claim 1 ,wherein the high-voltage generating circuit unit has a high-voltage transformer, andwherein the shield case is connected to a secondary side of the high-voltage transformer.3. The ion generating apparatus according to claim 1 ,wherein the shield case is ground-connected by a capacitor.4. The ion generating apparatus according to claim 3 ,wherein the capacitor is interposed between a primary side and the secondary side of the high-voltage ...

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Номер записи: 54
18-03-2021 дата публикации

ETCHING APPARATUS AND ETCHING METHOD

Номер: US20210082656A1
Автор: GOKI Yusuke
Принадлежит:

An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source. 1. An etching apparatus , comprising:a substrate holder configured to hold a substrate;a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle;a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle; anda controller configured to control at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.2. The etching apparatus according to claim 1 , wherein the control section can move the first ion source angle and the second ion source independently of one another.3. The etching apparatus according to claim 1 , wherein at least one of the first or second ion source includes a grid electrode.4. The etching apparatus according claim 1 , wherein the first ions and the second ions etch a pattern on the substrate.5. The etching apparatus according claim 1 , wherein the first ions and the second ions are a same type of ion.6. The etching apparatus according to claim 1 , further comprising:a rail upon which the first ...

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Номер записи: 55
24-03-2016 дата публикации

ION SOURCE DEVICES AND METHODS

Номер: US20160086763A1
Автор: Goerbing Frank
Принадлежит:

An ion source includes a chamber defining an interior cavity for ionization, an electron beam source at a first end of the interior cavity, an inlet for introducing ionizable gas into the chamber, and an arc slit for extracting ions from the chamber. The chamber includes an electrically conductive ceramic. 1. A method for doping a semiconductor , the method comprising:ionizing a gas within a chamber of an ion source, the chamber comprising an electrically conductive ceramic;placing a target semiconductor material in an implantation target area;producing an ion stream with the ion source;aiming the ion stream at the target semiconductor material; andimplanting the target semiconductor with ions from the ion stream.2. The method of claim 1 , wherein the ion source comprises:an interior cavity for ionization defined by the chamber;an electron beam source at a first end of the interior cavity;an inlet for introducing an ionizable gas into the chamber; andan arc slit for extracting ions from the chamber.3. The method of claim 1 , wherein the ion stream is produced such that it is relatively free of heavy metals.4. The method of claim 1 , wherein the electrically conductive ceramic comprises a hexaboride substance.5. The method of claim 1 , wherein the electrically conductive ceramic is selected from the group consisting of: lanthanum hexaboride (LaB) claim 1 , calcium hexaboride (CaB) claim 1 , cerium hexaboride (CeB) claim 1 , and europium hexaboride (EuB).6. The method of claim 1 , wherein the electrically conductive ceramic is lanthanum hexaboride (LaB).7. The method of claim 6 , wherein the lanthanum hexaboride (LaB) in the chamber amplifies the ion stream.8. The method of claim 1 , wherein the gas is a halogen gas.9. The method of claim 8 , wherein the halogen gas is germanium tetrafluoride (GeF).10. A method for generating an ion beam claim 8 , the method comprising: a chamber defining an interior cavity for ionization;', 'an electron beam source at a first end of ...

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Номер записи: 56
23-03-2017 дата публикации

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS

Номер: US20170084419A1
Автор: NAKAGAWA Yukito, Tsujiyama Masashi, Yasumatsu Yasushi
Принадлежит:

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers. 1. A plate-shaped grid provided with a hole , whereinthe grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, andthe hole is formed in the grid so as to cut off the carbon fibers.2. The grid according to claim 1 , wherein the carbon fibers included in the carbon-carbon composite are chopped carbon fibers.3. The grid according to claim 1 , wherein at least part of the carbon-carbon composite is coated with a different material from the carbon-carbon composite.4. An ion beam processing apparatus comprising:a plasma generating unit;a processing chamber; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a grid assembly including the grid according to and configured to extract ions from plasma generated by the plasma generating unit to the processing chamber.'}5. A method of manufacturing a grid comprising:preparing a plate-shaped carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the carbon-carbon composite; andforming a hole in the carbon-carbon composite so as to cut off the carbon fibers by using a processing tool configured to perform cutting by rotary motion. This application is a continuation application of International Application No. PCT/JP2015/005851, filed Nov. 25, 2015, which claims the benefit of Japanese Patent Application No. 2015-052363 filed Mar. 16, 2015. The contents of the aforementioned applications are incorporated herein by reference in their entireties.Field of the InventionThe present invention relates to a grid plate, a method of manufacturing the same, and an ion beam processing apparatus.Description of the Related ArtIon ...

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Номер записи: 57
02-04-2015 дата публикации

SiC Coating In An Ion Implanter

Номер: US20150090897A1
Автор: Bettencourt Robert H., Mason Robert J., Miller Timothy J., Patel Shardul S.
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components. 1. An ion implanter , comprising:an ion source comprising an ion source chamber having a first wall, an opposite conductive second wall and a plurality of conductive side walls, where an extraction aperture is disposed in said second wall; andan extraction electrode assembly disposed proximate said extraction aperture and outside said ion source chamber, said extraction electrode assembly comprising one or more conductive electrodes;wherein at least one conductive component is coated with low resistivity silicon carbide.2. The ion implanter of claim 1 , wherein said silicon carbide has a resistivity of less than 1 ohm-cm.3. The ion implanter of claim 1 , wherein said side walls each comprise an interior surface facing an interior of said ion source chamber claim 1 , and said interior surfaces are coated with said low resistivity silicon carbide.4. The ion implanter of claim 1 , wherein an interior surface of said second wall is coated with said low resistivity silicon carbide.5. The ion implanter of claim 1 , wherein a surface of said conductive electrodes is coated with said low resistivity silicon carbide.6. The ion implanter of claim 5 , wherein each of said conductive electrodes comprise a respective aperture claim 5 , and a portion of each of said conductive electrodes surrounding said respective aperture is coated with said low resistivity silicon ...

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Номер записи: 58
02-04-2015 дата публикации

ION SOURCE

Номер: US20150090898A1
Автор: Futter Richard John, Markwitz Andreas
Принадлежит:

The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity. 1. An ion source comprising:first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis;at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities;an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar;a first electrical connection which extends from outside the cavity to the anode; anda gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.2. An ion source as claimed in claim 1 , wherein the at least ...

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Номер записи: 59
19-06-2014 дата публикации

Ion Source Having Increased Electron Path Length

Номер: US20140166870A1
Автор: Irina Molodetsky, Jani Reijonen, Kenneth E. Stephenson
Принадлежит: Schlumberger Technology Corp

An ion source includes a cathode to emit electrons, a cathode grid downstream of the cathode, a reflector electrode downstream of the cathode grid, reflector grid radially inward of the reflector electrode, and an extractor electrode downstream of the reflector electrode, the extractor electrode and cathode grid defining an ionization region therebetween. The cathode and the cathode grid have a first voltage difference such the electrons are accelerated through the cathode grid and into the ionization region on a trajectory toward the extractor electrode. The reflector grid and the extractor electrode have a second voltage difference less than the first voltage difference such that the electrons slow as they near the extractor electrode and are repelled on a trajectory toward the reflector electrode. The reflector electrode has a negative potential such that the electrons are repelled away from the reflector electrode and into the ionization region.

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Номер записи: 60
19-06-2014 дата публикации

ARC CHAMBER WITH MULTIPLE CATHODES FOR AN ION SOURCE

Номер: US20140167614A1
Автор: Chou Hong-Hsing, HSIEH Hsiao-Yin, HUANG Chi-Hao, Lin Chin-Tsung, Wang Yeh-Chieh
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode. 1. An apparatus for extending the useful life of an ion source comprising:an arc chamber housing defining a reaction cavity, the arc chamber having a plurality of gas injection openings and a recess in at least one wall thereof;at least one repeller element, comprising a repeller mounted to a clapboard, said repeller element pivotally mounted to rotate around an axis from a first position extending across the reaction cavity to a second position in the recess of the arc chamber housing; anda plurality of cathodes, mounted in the reaction cavity such that a first one of the plurality of cathodes is directly exposed to the reaction cavity, and a second one of the plurality of cathodes is covered by the at least one repeller element when the at least one repeller element is in the first position.2. The apparatus of claim 1 , further comprising a power supply for providing electrical power to a selectable one of the plurality of cathodes.3. The apparatus of claim 1 , further comprising a plurality of power supplies claim 1 , wherein each of the plurality of cathodes is electrically powered independently by a respective one of the plurality of power supplies.4. The apparatus of claim 1 , further comprising:at least one rotation assembly connected to the at least one repeller ...

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Номер записи: 61
31-03-2022 дата публикации

Apparatus and method for ionizing an analyte, and apparatus and method for analyzing an ionized analyte

Номер: US20220102129A1
Автор: Jan-Christoph WOLF
Принадлежит: Plasmion GmbH

The present invention discloses an ionization apparatus 10 for ionizing an analyte S, comprising an inlet E, an outlet A, a first electrode 1, a second electrode 2 and a dielectric element 3. The first electrode 1, the second electrode 2 and the dielectric element 3 are arranged relative to one another such that, by applying an electric voltage between the first electrode 1 and the second electrode 2, a dielectric barrier discharge is establishable in a discharge area 5 in the ionization apparatus 10. The first and second electrodes 1, 2 are arranged such that they are displaceable or movable relative to each other.

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Номер записи: 62
12-03-2020 дата публикации

ION IMPLANTATION PROCESSES AND APPARATUS USING GALLIUM

Номер: US20200083015A1
Автор: Byl Oleg, Despres Joseph R., Jones Edward E., Sweeney Joseph D., Tang Ying, Yedave Sharad N.
Принадлежит:

An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof. 1. An ion source apparatus capable of generating gallium ions , the apparatus comprising:an ion source chamber; anda consumable structure in or associated with the ion source chamber, said consumable structure comprising gallium nitride, gallium oxide, or a combination thereof.2. An ion source apparatus of claim 1 , the apparatus comprising an ion source chamber that includes:an interior defined by interior surfaces that include sidewalls, a bottom, and a top,a cathode and an anti-cathode at the interior, andone or more gallium-containing sheet structures at the interior and covering one or more of the interior surfaces, the one or more gallium-containing sheet structures comprising gallium nitride, gallium oxide, or a combination thereof.3. An apparatus of wherein the one or more gallium-containing sheet structures can be removed from the interior.4. An apparatus of claim 2 , wherein the one or more gallium-containing sheets structures comprise at least 80 percent by weight gallium nitride.5. An apparatus of claim 2 , wherein the one or more gallium-containing sheet structures comprise at least 80 percent by weight gallium oxide.62. An apparatus of claim claim 2 , wherein the one or more gallium-containing sheet structures comprise at least 80 percent by weight of a combination of gallium oxide and gallium nitride.7. An apparatus of claim 2 , wherein the interior contains:one or more gallium-containing sheets structures comprise at least ...

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Номер записи: 63
25-03-2021 дата публикации

HYDROGEN GENERATOR FOR AN ION IMPLANTER

Номер: US20210090841A1
Автор: Colby Wendy, Colvin Neil K., Hsieh Tseh-Jen, Rzeszut Richard
Принадлежит:

A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source. 1. A terminal system for an ion implantation system , wherein the terminal system comprises:a terminal housing;an ion source assembly disposed within the terminal housing, wherein the ion source assembly is electrically isolated from the terminal housing; anda hydrogen generator disposed within the terminal housing, wherein the hydrogen generator is at the same electrical potential as the ion source assembly and electrically coupled thereto, and wherein the hydrogen generator is configured to produce hydrogen gas and supply said hydrogen gas to the ion source assembly.2. The terminal system of claim 1 , further comprising a gas box claim 1 , wherein the hydrogen generator is disposed within the gas box claim 1 , and wherein the gas box is electrically coupled to the ion source assembly.3. The terminal system of claim 2 , further comprising one or more electrical insulators claim 2 , wherein the one or more electrical insulators electrically isolate the ion source assembly and gas box from the terminal housing.4. The terminal system of ...

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Номер записи: 64
29-03-2018 дата публикации

Temperature Controlled Ion Source

Номер: US20180090297A1
Автор: Binns Brant S., Cobb Eric R., Holden Scott C., Koo Bon-Woong, Starks Kenneth L., White Richard M.
Принадлежит:

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled. 1. An apparatus for generating an ion beam , comprising:an ion source comprising a plurality of chamber walls, wherein a tapered outward protrusion extends outward from one of the plurality of chamber walls;a heat sink, having a recessed cavity, wherein the tapered outward protrusion is disposed in the recessed cavity; anda set of shims disposed between the one of the plurality of chamber walls and the heat sink so as to set an initial gap between the tapered outward protrusion and the recessed cavity;wherein a final temperature of the ion source is determined based on a temperature of the heat sink and a width of the initial gap.2. The apparatus of claim 1 , wherein the tapered outward protrusion and the recessed cavity are complementary shapes.3. The apparatus of claim 1 , wherein the heat sink comprises channels claim 1 , and the temperature of the heat sink is determined based on a temperature of coolant fluid flowing through the channels.4. The apparatus of claim 1 , wherein the heat sink comprises channels claim 1 , and the temperature of the heat sink is determined based on a flow rate of coolant fluid flowing through the channels.5. The apparatus of claim 1 , wherein the final ...

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Номер записи: 65
05-05-2022 дата публикации

ETCHING ALUMINUM NITRIDE OR ALUMINUM OXIDE TO GENERATE AN ALUMINUM ION BEAM

Номер: US20220139662A1
Автор: Bassom Neil, Colvin Neil K., XU Xiao
Принадлежит:

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

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Номер записи: 66
05-05-2022 дата публикации

FLUORINE BASED MOLECULAR CO-GAS WHEN RUNNING DIMETHYLALUMINUM CHLORIDE AS A SOURCE MATERIAL TO GENERATE AN ALUMINUM ION BEAM

Номер: US20220139664A1
Автор: Bassom Neil, Colvin Neil K., Moore Edward
Принадлежит:

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

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Номер записи: 67
19-03-2020 дата публикации

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

Номер: US20200090898A1
Автор: Vandermeulen Peter F.
Принадлежит:

An ion beam treatment or implantation system includes an ion source emitting ion beams. The ion source includes a microwave source and a curved waveguide conduit having openings therein. The waveguide conduit is coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings. The ion source also includes a curved plasma chamber in communication with the waveguide conduit through the openings. The plasma chamber receives through the openings microwaves from the waveguide conduit. The plasma chamber includes magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which the ion beams are extracted. 1. An ion beam treatment or implantation system , comprising:an ion source emitting a plurality of ion beams, wherein the ion source comprises:(a) a microwave source;(b) a curved waveguide conduit having a plurality of openings therein, said waveguide conduit being coupled to the microwave source for transmitting microwaves from the microwave source through the plurality of openings; and(c) a curved plasma chamber in communication with the waveguide conduit through the plurality of openings, said plasma chamber receiving through said plurality of openings microwaves from the waveguide conduit, said plasma chamber including a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber, said plasma chamber further comprising a charged cover at a side of the chamber opposite the side containing the plurality of openings, said cover including extraction holes through which the plurality of ion beams are extracted.2. The system of claim 1 , wherein the curved waveguide conduit and the curved plasma chamber are configured to steer the ion beams toward a ...

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Номер записи: 68
19-03-2020 дата публикации

Insertable Target Holder For Solid Dopant Materials

Номер: US20200090916A1
Автор: Alvarado Daniel, Becker Klaus, Krause Stephen, Patel Shreyansh, Tieger Daniel R., WRIGHT Graham
Принадлежит:

An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket. 1. An indirectly heated cathode ion source , comprising:an arc chamber, comprising a plurality of walls connecting a first end and a second end;an indirectly heated cathode disposed on the first end of the arc chamber; anda target holder, having a pocket to hold a dopant material, wherein the target holder is oriented in the arc chamber so that gravity retains the dopant material in the target holder, the target holder entering the arc chamber through one of the plurality of walls, having a first position where the pocket is outside the arc chamber and a second position where at least a portion of the pocket is disposed in the arc chamber.2. The indirectly heated cathode ion source of claim 1 , further comprising an actuator in communication with the target holder to move the target holder from the first position to the second position.3. The indirectly heated cathode ion source of claim 1 , wherein the pocket comprises a bottom surface claim 1 , a plurality of sidewalls and an open top.4. The indirectly heated cathode ion source of claim 3 , further comprising a sleeve disposed over the target holder to cover at least a portion of the open top.5. The indirectly heated cathode ion source of claim 3 , further comprising a sleeve that surrounds a portion of the target holder to cover at least a portion of the open top.6. The indirectly ...

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Номер записи: 69
16-04-2015 дата публикации

MEDIUM CURRENT RIBBON BEAM FOR ION IMPLANTATION

Номер: US20150102233A1
Автор: FREE Charles M., HOGLUND David, Kaim Robert, Platow Wilhelm P., SAADATMAND Kourosh
Принадлежит:

A method of setting up a medium current ribbon beam for ion implantation is provided. It includes providing an ion source fed with a process gas and a support gas. The process ion beam is separated from the support gas beam with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to support gas in the ion source gas feed. Process beam intensity may also be controlled with one or more mechanical current limiting devices located downstream of the ion source. An ion beam system is also provided. This method may control the total ribbon beam intensity at the target between approximately 3 uA to about 3 mA. 1. A method of setting up a medium current ribbon beam for ion implantation , comprising:providing an ion source fed with a process gas and a support gas; andadjusting the ion source with a desired ratio of the process gas and the support gas to control the source plasma density of a process ion beam of the ion source.2. The method of setting up a medium current ribbon beam for ion implantation according to claim 1 , further comprising: adjusting the source plasma density to match a source extraction voltage and a source extraction gap.3. A method of setting up a medium current ribbon beam for ion implantation comprising:operating at least one current limiting device located downstream of an ion source to control the source plasma density of a process ion beam of the ion source.4. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , wherein the current limiting device operates by mechanically limiting passage of the process ion beam by means of a variable slit or aperture.5. The method of setting up a medium current ribbon beam for ion implantation according to claim 3 , further comprising: setting a mass analyzer to select the mass of process ions in the process ion beam.6. The method of setting up a medium current ribbon beam for ion implantation according ...

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Номер записи: 70
12-05-2022 дата публикации

APPARATUS AND SYSTEM INCLUDING HIGH ANGLE EXTRACTION OPTICS

Номер: US20220148843A1
Автор: Biloiu Costel, Campbell Christopher, Daniels Kevin M., SINCLAIR Frank, WALLACE Jay R.
Принадлежит: Applied Materials, Inc.

An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap. 1. An extraction plate for an ion beam system , comprising: a peripheral portion, the peripheral portion to connect to a first side of a plasma chamber; and', 'a central portion, defining a concave shape, wherein an extraction aperture is arranged along a first surface of the central portion, the first surface being oriented at a high angle with respect to the first side; and, 'an insulator body, havinga patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.2. The ion extraction plate of claim 1 , comprising:a protective layer, disposed over the patterned electrode.3. The extraction plate of claim 1 , the patterned electrode comprising a thickness of 10 μm to 100 μm.4. The extraction plate of claim 2 , the protective layer comprising a thickness of 10 μm to 100 μm.5. The extraction plate of claim 1 , wherein the extraction aperture is elongated claim 1 , wherein the extraction aperture defined an aperture length and an aperture width claim 1 , wherein a ratio of the aperture length to the aperture width is greater than 100.6. The extraction plate of claim 1 , wherein the first surface defines ...

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Номер записи: 71
14-04-2016 дата публикации

Charged Particle Beam System and Method of Operating a Charged Particle Beam System

Номер: US20160104598A1
Автор: Huang Weijie, IV John A., McVey Shawn, Notte, Rahman FHM-Faridur
Принадлежит:

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10per incident neon ion. 1. A gas field ion source , comprising:an external housing,an internal housing within the external housing,an electrically conductive tip within the internal housing,a gas supply configured to supply a gas to the internal housing, the gas supply comprising a tube terminating within the internal housing,an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing, anda flapper valve between the internal and the external housing, the flapper valve being configured to increase a flow of gas from the internal housing to the external housing when the flapper valve is opened.2. The gas field ion source of claim 1 , wherein the gas supply is configured so that:in a first mode of operation of the gas field ion source, the gas supply supplies a first noble gas; andin a second mode of operation of operation of the gas field ion source, the gas supply supplies a second noble gas.3. The gas field ion source of claim 2 , wherein the first gas is helium claim 2 , and the second gas is neon.4. The gas field ion source of claim 1 , further comprising a vacuum pump connected to the external housing.5. The gas field ion source of claim 4 , wherein the flapper valve is configured to increase a pumping speed of the internal housing if the flapper valve is opened.6. The gas field ion source of claim 5 , wherein the gas supply is ...

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Номер записи: 72
03-07-2014 дата публикации

Ion source using field emitter array cathode and electromagnetic confinement

Номер: US20140184074A1
Автор: Luke Perkins
Принадлежит: Schlumberger Technology Corp

An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the anode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one field emitter array (FEA) cathode is configured to electrostatically discharge due to an electric field in the ion source. The back passive cathode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generating a magnetic field, such that a Penning-type trap is produced to confine electrons from the electrostatic discharge to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.

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Номер записи: 73
08-04-2021 дата публикации

ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY

Номер: US20210104377A1
Автор: Okamoto Naoyuki, SUZUKI Fumihito, Tsujiyama Masashi, Yasumatsu Yasushi
Принадлежит:

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode. 1an ion generation chamber including an ion generator;a processing chamber in which the processing is performed and a holder to hold a substrate is disposed; a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and', 'a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions; and, 'a plurality of electrodes configured to separate the ion generation chamber from the processing chamber, and to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber, the plurality of electrodes includinga power unit configured to apply different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by the ion generator in the ion generation chamber,wherein a material of the first electrode is different from a material of the second electrode,wherein the plurality of electrodes ...

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Номер записи: 74
26-03-2020 дата публикации

Extraction Apparatus and System for High Throughput Ion Beam Processing

Номер: US20200098540A1
Автор: Ballou Jon, Biloiu Costel, Buonodono James P.
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

In one embodiment, an ion extraction optics for extracting a plurality of ion beams is provided. The ion extraction optics may include, an extraction plate, the extraction plate defining a cut-out region, the cut-out region being elongated along a first direction. The extraction apparatus may include a slidable insert, the slidable insert disposed to overlap the cut-out region, and slidably movable with respect to the extraction plate, along the first direction, wherein the slidable insert and cut-out region define a first aperture and a second aperture. 1. An ion extraction optics , comprising:an extraction plate including a cut-out region; anda slidable insert slidably movable with respect to the extraction plate, wherein the slidable insert and the cut-out region define a first aperture and a second aperture.2. The ion extraction optics of claim 1 , wherein the extraction plate comprises a first material claim 1 , and wherein the slidable insert comprises the first material.3. The ion extraction optics of claim 1 , wherein the extraction plate comprises a pair of recesses claim 1 , disposed on a first edge of the cut-out region and a second edge of the cut-out region claim 1 , the pair of recesses arranged to accommodate the slidable insert claim 1 , wherein the slidable insert and the extraction plate are disposed in a common plane claim 1 , on an outer side of the ion extraction optics.4. The ion extraction optics of claim 3 , the slidable insert comprising a plurality of elongated slots claim 3 , disposed adjacent the pair of recesses claim 3 , the ion extraction optics further comprising a pair of couplers claim 3 , disposed within respective pair of elongated slots from the plurality of elongated slots claim 3 , and mechanically coupling the slidable insert to the extraction plate.5. The ion extraction optics of claim 1 , further comprising:a first beam blocker, disposed to overlap a first portion of the first aperture, wherein the first beam blocker and the ...

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Номер записи: 75
19-04-2018 дата публикации

ORTHOGONAL DOUBLE DIPOLE CANCER THERAPY TREATMENT BEAM SCANNING APPARATUS AND METHOD OF USE THEREOF

Номер: US20180104510A1
Автор: Amato Mark R., Desai Nandish, Elgart Faye Hendley, Lee W. Davis, Ruebel Nick
Принадлежит:

The invention comprises a method and apparatus for scanning charged particles in a cancer therapy system, comprising the steps of: (1) providing a first and second dipole magnet system and a gap, the gap comprising a common gap length, along a path of the charged particles, within both the first and second dipole magnet systems, the gap comprising a progressively increasing x/y-plane cross-section area from an entrance area of the charged particles into the double dipole magnet system to an exit area of the double dipole magnet system, the x/y-plane perpendicular to a z-axis from a center of the entrance area to a center of the exit area; (2) scanning the positively charged particles along a first axis of the x/y-plane using the first dipole magnet system; and (3) scanning the positively charged particles along a second axis of the x/y-plane using the second dipole magnet system. 1. An apparatus for steering positively charged particles in a cancer therapy system , comprising: a first dipole magnet system;', 'a second dipole magnet system; and', 'a gap, a common length of the gap along a path of the positively charged particles both: (1) within said first dipole magnet system and (2) within said second dipole magnet system, said gap comprising at least ten progressively increased x/y-plane cross-section areas from an entrance area into said double dipole magnet system to an exit area of said double dipole magnet system,', 'the x/y-plane perpendicular to a z-axis from a center of the entrance area to a center of the exit area., 'a double dipole magnet system, comprising2. The apparatus of claim 1 , said first dipole magnet system further comprising:a first magnet core of a first magnet half of said first dipole magnet system, said first magnet core comprising a first gap surface proximate the gap and a set of winding surfaces; anda first set of windings wound longitudinally around said first magnet core along said set of winding surfaces.3. The apparatus of claim 2 , ...

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Номер записи: 76
02-06-2022 дата публикации

Sputter ion pump with penning-trap current sensor

Номер: US20220172935A1
Автор: Farhad Majdeteimouri, Steven Michael Hughes
Принадлежит: Coldquanta Inc

A sputter-ion-pump system includes a sputter ion pump and an electronic drive. The electronic drive supplies a voltage across the ion pump to establish, in cooperation with a magnetic field, a Penning trap within the ion pump. A current sensor measures the Penning-trap current across the Penning trap. The Penning trap is used as an indication of pressure within the ion pump or a vacuum chamber including or in fluid communication with the ion pump. The pressure information can be used to determine flow rates, e.g., due to a load, outgassing, and/or leakage from an ambient.

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Номер записи: 77
30-04-2015 дата публикации

Pinched plasma bridge flood gun for substrate charge neutralization

Номер: US20150115796A1
Автор: Ali Shajii, Andrew B. Cowe, David SONNENSHEIN, Gregory E. Stratoti, Michael Kishinevsky
Принадлежит: Varian Semiconductor Equipment Associates Inc

A plasma flood gun for an ion implantation system includes an insulating block portion and first and second conductive block portions disposed on opposite sides of the insulating block portion. Conductive straps can be coupled between the first and second conductive block portions. The conductive block portions and the central body portion include recesses which form a closed loop plasma chamber. A power source is coupled to the conductive block portions for inductively coupling radio frequency electrical power into the closed loop plasma chamber to excite the gaseous substance to generate a plasma. The respective recess in the second conductive block portion includes a pinch region having a cross-sectional dimension that is smaller than a cross-sectional area of portion of the closed loop plasma chamber directly adjacent the pinch region. The pinch region can be positioned immediately adjacent an outlet portion formed in the second conductive block portion.

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Номер записи: 78
19-04-2018 дата публикации

Ion beam irradiation apparatus and substrate processing apparatus

Номер: US20180108516A1
Автор: Kenichi Shimono, Mitsunori Ohata, Shinji Nagamachi, Yoshihiro Umezawa
Принадлежит: Tokyo Electron Ltd

Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.

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Номер записи: 79
10-07-2014 дата публикации

EMITTER, GAS FIELD ION SOURCE, AND ION BEAM DEVICE

Номер: US20140191128A1
Автор: Kawanami Yoshimi, MORITANI Hironori, MUTO Hiroyuki
Принадлежит: HITACHI HIGH-TECHNOLOGIES CORPORATION

Provided is an ion source emitter that does not cause significant extraction voltage changes even when an apex portion of the emitter is repeatedly regenerated. The emitter has a shape of a triangular pyramid with the single atom at the apex. An apex portion of the emitter is substantially shaped like a hexagon when viewed from the apex side. 1. An emitter used for an ion source for an ion beam device , the emitter comprising:a base part formed of a single crystal metal; anda needle-like apex portion,wherein the vicinity of the apex is shaped like a triangular pyramid, andwherein the end of the apex portion is substantially shaped like a hexagon as viewed from the apex side.2. The emitter according to claim 1 ,wherein, when the structure of the apex portion is broken, the apex portion can be regenerated by performing a regeneration process that includes an annealing step.3. A gas field ion source comprising:an emitter having a base part formed of a single crystal metal and a needle-like apex portion;an extraction electrode having an opening at a location distant from the apex of the emitter;a gas supply piping that supplies a gas to the vicinity of the apex of the emitter; andan extraction voltage application section that applies an extraction voltage between the emitter and the extraction electrode to form an electric field for ionizing the gas,wherein the vicinity of the apex of the emitter is shaped like a triangular pyramid, andwherein the end of the apex portion is substantially shaped like a hexagon as viewed from the apex side.4. The gas field ion source according to claim 3 ,wherein, when the structure of the apex portion is broken, the apex portion can be regenerated by performing a regeneration process that includes an annealing step.5. The gas field ion source according to claim 3 ,wherein, when the structure of the apex portion is broken, the shape of the apex portion of the emitter can be regenerated by performing a regeneration process that includes an ...

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Номер записи: 80
20-04-2017 дата публикации

A RIBON BEAM ION SOURCE OF ARBITRARY LENGTH

Номер: US20170110282A1
Автор: White Nicholas R.
Принадлежит:

The invention is a unique and substantive improvement in ion source assemblies which is able to produce a ribbon-shaped ion beam having an arbitrarily chosen breadth dimension which is at least ten times greater [and often more than thirty times greater] than its thickness dimension, the breadth and thickness dimensions of the beam being normal (i.e., perpendicular) to the Z-axis direction of travel for the ion beam. In all its embodiments, the improved ion source will comprise not less than two discrete component parts: (i) A closed, solid wall, prism-shaped arc discharge chamber having limited width and depth dimensions, and which concurrently has an arbitrarily chosen and predetermined length dimension which can be as small as 80 millimeters and alternatively exceed 3,000 millimeters in size; and (ii) A primary electron trap assembly which comprises at least an adjacently located magnetic field generating yoke subassembly able to provide a discernible quadrupole magnetic field internally within a confined cavity volume existing within the measurable dimensions of the arc discharge chamber walls. 1. In an ion beam source able to produce a ribbon-shaped ion beam having a measurable breadth dimension which is at least ten times greater than its thickness dimension , the breadth and thickness dimensions of the produced beam being normal to the Z-axis direction of travel for the beam , and wherein the ion beam source includes(i) a closed arc discharge chamber including a discrete solid front wall which presents at least one exit aperture for ion beam egress, a discrete solid back wall, at least two laterally positioned and oppositely situated solid adjoining sidewalls, two discrete solid and oppositely placed contiguous endwalls, and an internal cavity of determinable volume and configuration, wherein the arc discharge chamber presents a predetermined width dimension which extends along the Y-axis, a set front-to-hack dimension which extends along the Z-axis, and an ...

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Номер записи: 81
20-04-2017 дата публикации

METHOD AND APPARATUS FOR A POROUS ELECTROSPRAY EMITTER

Номер: US20170110284A1
Автор: Arestie Steven Mark, Lozano Paulo C.
Принадлежит: Massachusetts Institute of Technology

An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip. 1. (canceled)2. An electrospray emitter array comprising:a substrate; anda plurality of porous emitters, wherein each porous emitter extends up from the substrate to a tip, and wherein each porous emitter has a pore size gradient that decreases in a direction from the substrate toward the tip.3. The electrospray emitter array of claim 2 , further comprising a source of ions in fluid communication with the plurality of porous emitters through the substrate.4. The electrospray emitter array of claim 3 , wherein the source of ions comprises at least one of an ionic liquid and a room-temperature molten salt.5. The electrospray emitter array of claim 3 , further comprising a first electrode electrically connected to the plurality of porous emitters through the source of ions and at least a second electrode positioned downstream relative to the plurality of porous emitters and the first electrode.6. The electrospray emitter array of claim 5 , wherein claim 5 , when a voltage potential is applied to the plurality of porous emitters claim 5 , ions are emitted by the plurality of porous emitters.7. The electrospray emitter array of claim 6 , wherein at least a portion of a porous emitter body is disposed in or on the source of ions such that the source of ions is transported by capillarity from a base of the porous emitter body to the tip of the porous emitter body.8. The electrospray emitter array of claim 7 , wherein the substrate is a porous substrate.9. The electrospray emitter array of claim 7 , wherein ...

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Номер записи: 82
11-04-2019 дата публикации

ION BEAM PROCESSING APPARATUS, ELECTRODE ASSEMBLY, AND METHOD OF CLEANING ELECTRODE ASSEMBLY

Номер: US20190108973A1
Автор: Okamoto Naoyuki, SUZUKI Fumihito, Tsujiyama Masashi, Yasumatsu Yasushi
Принадлежит:

Provided is an ion beam processing apparatus including an ion generation chamber, a processing chamber, and electrodes to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber. The electrodes includes a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions. The apparatus also includes a power unit which applies different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by an ion generator in the ion generation chamber. A material of the first electrode is different from a material of the second electrode. 1. An ion beam processing apparatus configured to perform processing by ion beam irradiation , comprising:an ion generation chamber including an ion generator;a processing chamber in which the processing is performed and a holder to hold a substrate is disposed; a first electrode disposed close to the ion generation chamber and provided with an ion passage hole to allow passage of the ions, and', 'a second electrode disposed adjacent to the first electrode and closer to the processing chamber than the first electrode is, and provided with an ion passage hole to allow passage of the ions; and, 'a plurality of electrodes configured to separate the ion generation chamber from the processing chamber, and to form an ion beam by extracting ions generated in the ion generation chamber to the processing chamber, the plurality of electrodes including'}a power unit configured to apply different electric potentials to the first electrode and the second electrode, respectively, so as to accelerate the ions generated by the ion generator in the ion generation chamber,wherein a material of the ...

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Номер записи: 83
11-04-2019 дата публикации

SELF-NEUTRALIZED RADIO FREQUENCY PLASMA ION SOURCE

Номер: US20190108978A1
Автор: Konopka David, Outten Craig A.
Принадлежит: Denton Vacuum, LLC

A plasma ion source includes a plasma generation unit comprising a plasma discharge chamber adapted to generate and sustain a plasma confined therein, a gas distribution unit adapted to deliver a working gas into an interior of the plasma discharge chamber, an ignition unit adapted to stimulate ionization of the working gas to generate a stable plasma, an electrode bias unit configured to apply an electrostatic potential to charged species in the plasma discharge, and an ion extraction unit configured to accelerate the charged species out of the ion extraction unit to generate a quasi-neutral plasma ion beam. The plasma ion source further includes a vacuum integrated matching network coupled with the plasma generation and electrode bias units. The matching network resides with the plasma generation and electrode bias units in a vacuum chamber during operation of the plasma ion source. 1. A high-frequency plasma ion source , comprising:a plasma generation unit including a plasma discharge chamber adapted to generate and sustain a plasma confined therein;a gas distribution unit adapted to deliver a working gas into an interior of the plasma discharge chamber;an ignition unit adapted to stimulate ionization of the working gas to thereby generate a stable plasma;an electrode bias unit configured to apply an electrostatic potential to charged species in the plasma discharge;an ion extraction unit disposed at an end of the plasma discharge chamber opposite the electrode bias unit, the ion extraction unit being configured to accelerate the charged species in the plasma discharge out of the ion extraction unit to generate an output quasi-neutral plasma ion beam; anda vacuum integrated matching network operatively coupled with the plasma generation unit and the electrode bias unit, the matching network being configured to facilitate optimal power transfer from the plasma generation unit, the matching network residing with the plasma generation unit and electrode bias unit in ...

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Номер записи: 84
17-07-2014 дата публикации

ION BEAM DEVICE

Номер: US20140197329A1
Автор: Kawanami Yoshimi, MUTO Hiroyuki
Принадлежит:

To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased by raising a gas introduction pressure. An object of the present invention is to increase the ion current by raising the gas pressure and prevent an ion beam from being scattered by an ionization gas. The gas is supplied from a structure maintained at a ground potential to prevent the application of a high voltage to the vicinity of an ionization gas introduction port at which the gas pressure is relatively high. Further, the ionization gas existing in a region through which the ion beam passes is preferentially reduced by performing differential evacuation from a lens opening in a lens electrode that forms an acceleration/focusing lens. 1. An ion beam device that observes or fabricates a sample by irradiating the sample with an ion beam generated from a gas field ion source ,wherein the gas field ion source includes:an emitter tip that receives the supply of a voltage from an acceleration power supply and acts as an anode;an extraction electrode that receives the supply of a voltage from an extraction power supply and acts as a cathode;a gas introduction section that supplies a gas from a gas introduction port to a space between the apex of the emitter tip and the extraction electrode; anda vacuum vessel that houses the emitter tip and the extraction electrode and has an evacuation port for evacuating the gas, andwherein the gas introduction port is disposed on a structure maintained at a ground potential.2. The ion beam device according to claim 1 ,wherein the structure is a lens electrode that accelerates or focuses the ion beam.3. The ion beam device according to claim 1 ,wherein the structure is disposed to surround the emitter tip.4. The ion beam device according to claim 1 , The present invention relates to an ion microscope, ...

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Номер записи: 85
14-05-2015 дата публикации

ION GENERATOR AND ION GENERATING METHOD

Номер: US20150129775A1
Автор: SATO Masateru
Принадлежит:

An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms. 1. An ion generator comprising:an arc chamber that is at least partially made up of a material containing carbon;a thermal electron emitter that emits thermal electrons into the arc chamber; anda gas introducer that introduces a source gas and a compound gas into the arc chamber, whereinthe source gas to be introduced into the arc chamber contains a halide gas, andthe compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.2. The ion generator according to claim 1 , wherein the compound gas is hydrocarbon.3. The ion generator according to claim 2 , wherein the hydrocarbon is at least one sort of gases selected from the group consisting of CH claim 2 , CH claim 2 , CHand CH.4. The ion generator according to claim 1 , wherein the source gas contains a fluoride gas.5. The ion generator according to claim 4 , wherein the fluoride gas is at least one sort of gases selected from the group consisting of BF claim 4 , GeFand PF.6. The ion generator according to claim 1 , wherein the source gas is at least one sort of gases selected from the group consisting of a chloride gas claim 1 , an iodide gas and a bromide gas.7. The ion generator according to claim 1 , wherein an inner wall surface of the arc chamber claim 1 , excluding a filament and a cathode claim 1 , is made up of carbon.8. An ion generating method comprising:introducing a source gas and a compound gas into an arc chamber that is at least partially made up of a material containing carbon; ...

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Номер записи: 86
14-05-2015 дата публикации

Arc chamber with multiple cathodes for an ion source

Номер: US20150130353A1
Автор: Chi-Hao Huang, Chin-Tsung Lin, Hong-Shing Chou, Hsiao-Yin HSIEH, Yeh-Chieh Wang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

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Номер записи: 87
25-04-2019 дата публикации

Ion Source For Enhanced Ionization

Номер: US20190122851A1
Автор: Alexander S. Perel, Daniel Alvarado, Daniel R. Tieger, Klaus Becker
Принадлежит: Varian Semiconductor Equipment Associates Inc

An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

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Номер записи: 88
10-05-2018 дата публикации

Ion Milling Apparatus and Ion Milling Method

Номер: US20180130630A1
Автор: Takasu Hisayuki, TAKEUCHI Shuichi, TANI Yuki
Принадлежит:

An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun. 1. An ion milling apparatus comprising:an ion gun that generates an ion beam;a sample chamber that can maintain a vacuum state in which irradiation processing by the ion beam generated by the ion gun is performed; andgas injection means for injecting a gas toward the inside of the ion gun.2. The ion milling apparatus according to claim 1 ,wherein the gas injection means moves attachments attached to the ion gun by injecting the gas to the attachments so as to restart the irradiation of the ion beam or stabilize the irradiation of the ion beam.3. The ion milling apparatus according to claim 1 ,wherein the ion gun includes a gas injection means insertion port for inserting the gas injection means into the inside of the ion gun.4. The ion milling apparatus according to claim 1 ,wherein the gas injection means is provided in the inside of the sample chamber.5. The ion milling apparatus according to claim 1 , further comprising:an ion beam current detection plate including a gas injection means holding mechanism which holds the gas injection means.6. The ion milling apparatus according to claim 1 , further comprising:an ion beam current detection plate including a target for coating.7. An ion milling apparatus comprising:an ion gun that is configured to include an anode which is disposed in the inside of the ion gun and to which a positive voltage is applied, a cathode which generates ions by generating a potential difference between the anode and the cathode, a magnet which forms a magnetic field in the inside ...

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Номер записи: 89
11-05-2017 дата публикации

ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS

Номер: US20170133193A1
Автор: Colvin Neil K., Hsieh Tseh-Jen
Принадлежит:

An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. An electrode has a shaft with a first diameter that passes through the body and the liner. The electrode is electrically isolated from the body where the liner is a plate having a first surface with an optional recess having a second surface. A hole is defined through the recess for the shaft to pass through. The hole has a second diameter that is larger than the first diameter, and an annular gap exists between the plate and the shaft. The plate has a lip extending from the second surface toward the first surface that surrounds the hole within the recess and generally prevents particulate contaminants from entering the annular gap. 1. An ion source liner , comprising:a plate having an exposure surface configured to be exposed to, and at least partially confine, a plasma generated within an ion source, wherein the exposure surface is defined by a first surface, wherein the plate comprises a hole through the first surface, and wherein the hole is configured to pass an electrode therethrough, leaving an annular gap between the electrode and the hole, and wherein a lip surrounds the hole and extends outward from the first surface.2. The ion source liner of claim 1 , wherein the first surface has a recess further defined therein claim 1 , wherein the recess comprises a second surface that is recessed a first distance from the first surface claim 1 , and wherein the lip extends a second distance from the second surface toward the first surface.3. The ion source liner of claim 2 , wherein one or more of the first surface and second surface is generally planar.4. The ion source liner of claim 2 , wherein the first distance is approximately twice the second distance.5. The ion source liner of claim 2 , wherein the lip comprises a third surface that is adjacent to a circumference ...

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Номер записи: 90
17-05-2018 дата публикации

Low conductance self-shielding insulator for ion implantation systems

Номер: US20180138006A1
Автор: John Baggett, Neil Colvin
Принадлежит: Axcelis Technologies Inc

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

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Номер записи: 91
17-05-2018 дата публикации

Ion Implanter

Номер: US20180138007A1
Автор: Hahto Sami K., Sacco George
Принадлежит:

An ion implanter is provided that includes an ion source configured to generate an ion beam and an analyzer magnet defining a chamber having a magnetic field therein. The chamber provides a curved path between a first end and a second end of the chamber. The ion source is disposed within the chamber of the analyzer magnet adjacent to the first end. The analyzer magnet is configured to bend the ion beam from the ion source within the chamber along the curved path to spatially separate one or more ion species in the ion beam while the ion source is immersed in the magnetic field of the analyzer magnet. 1. An ion implanter comprising:an ion source configured to generate an ion beam; andan analyzer magnet defining a chamber having a magnetic field therein, the chamber providing a curved path between a first end and a second end of the chamber, the ion source disposed within the chamber of the analyzer magnet adjacent to the first end,wherein the analyzer magnet is configured to bend the ion beam from the ion source within the chamber along the curved path to spatially separate one or more ion species in the ion beam while the ion source is immersed in the magnetic field of the analyzer magnet.2. The ion implanter of claim 1 , wherein the ion source comprises one or more extraction electrodes disposed in the chamber of the analyzer magnet for extracting the ion beam from the ion source claim 1 , at least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode.3. The ion implanter of claim 2 , wherein one end of each rod in the set of discrete rods for the at least one extraction electrode is fixed and another end of each rod in the set of discrete rods is slideable.4. The ion implanter of claim 2 , wherein a cross section of each of the rods is square.5. The ion implanter of claim 4 , wherein the one or more extraction electrodes include a plasma electrode.6. The ion implanter of claim 5 , ...

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Номер записи: 92
17-05-2018 дата публикации

Ion Source

Номер: US20180138008A1
Автор: Hahto Sami K., Sacco George
Принадлежит:

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber. 1. An ion source comprising:a gas source for supplying a gas;an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber, the ionization chamber adapted to form a plasma from the gas, wherein the plasma generates a plurality of ions; andone or more extraction electrodes at the exit aperture of the ionization chamber for extracting the plurality of ions from the ionization chamber in the form of an ion beam, at least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber, wherein each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.2. The ion source of claim 1 , wherein one end of each rod in the set of discrete rods for the at least one extraction electrode is fixed and another end of each rod in the set of discrete rods is slideable.3. The ion source of claim 2 , wherein a cross section of each of the rods is ...

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Номер записи: 93
09-05-2019 дата публикации

HYDROGENATED ISOTOPICALLY ENRICHED BORONT TRIFLUORIDE DOPANT SOURCE GAS COMPOSITION

Номер: US20190136069A1
Автор: Bishop Steven, Bly Oleg, Sweeney Joseph, Tang Ying, Yedave Sharad N.
Принадлежит:

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor. 1. A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition , said composition comprising (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (11B) , and (ii) hydrogen in an amount of from 2 to 6.5 vol. % , based on total volume of boron trifluoride and hydrogen in the composition.2. The composition of claim 1 , wherein the boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (11B) is isotopically enriched above an enrichment level selected from the group consisting of 80.1% claim 1 , 85% claim 1 , 88% claim 1 , 90% claim 1 , 95% claim 1 , 96% claim 1 , 97% claim 1 , 98% claim 1 , 99% claim 1 , 99.5% claim 1 , 99.9% claim 1 , 99.99% claim 1 , 99.995% claim 1 , and 99.999%.3. The composition of claim 1 , wherein the boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (11B) is isotopically enriched above 99%.4. The composition of claim 1 , wherein hydrogen is present in an amount of from 3 to 6.5 vol. % claim 1 , based on total volume of boon trifluoride and hydrogen in said composition.5. The composition of claim 1 , wherein hydrogen is present in an amount of from 4 to 6 vol. % claim 1 , based on total volume of boron trifluoride and hydrogen in said composition.6. The composition of claim 1 , wherein hydrogen is present in an amount of 5 vol. % claim 1 , based on total volume of boron trifluoride and hydrogen in said composition.7. A hydrogenated isotopically ...

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Номер записи: 94
18-05-2017 дата публикации

Low profile extraction electrode assembly

Номер: US20170140895A1
Автор: Jeffrey A. Burgess
Принадлежит: Varian Semiconductor Equipment Associates Inc

A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.

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Номер записи: 95
14-08-2014 дата публикации

METHODS OF FABRICATING MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT

Номер: US20140224987A1
Автор: CHOI Chang-Hoon, KIM Min-Kook, KO Woo-Seok, LEE Sang-Kil, YANG Yu-Sin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen received from the liquid nitrogen dewar into second gaseous nitrogen. Related methods are also disclosed. 1. A method of fabricating a microelectronic substrate comprising:providing a microelectronic substrate having a pattern;converting helium gas into helium ions using a helium ion generator;cooling the helium ion generator by vaporizing a liquid nitrogen received from a liquid nitrogen dewar into a second gaseous nitrogen using a cooling device coupled to the helium ion generator,irradiating the helium ions onto the microelectronic substrate; andmeasuring a step height of the pattern on the microelectronic substrate by detecting particles generated from the microelectronic substrate in response to the helium ions that are irradiated,wherein the liquid nitrogen dewar is connected to a compressor, receives first gaseous nitrogen from a continuous nitrogen supply device, compresses the received first gaseous nitrogen into the liquid nitrogen, and stores the liquid nitrogen.2. The method of claim 1 , wherein the particles are electrons claim 1 , and the measuring of ...

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Номер записи: 96
08-09-2022 дата публикации

Method of manufacturing semiconductor device, method of manufacturing stacked wiring structure, and ion beam irradiation apparatus

Номер: US20220285170A1
Автор: Junichi Hashimoto, Toshiyuki Sasaki
Принадлежит: Kioxia Corp

A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

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Номер записи: 97
09-05-2019 дата публикации

ION BEAM IRRADIATION DEVICE AND ION BEAM IRRADIATION METHOD

Номер: US20190139741A1
Автор: INAMI Hiroshi
Принадлежит: NISSIN ELECTRIC CO., LTD.

An ion beam irradiation device is provided and including: a substrate holder that holds a substrate; a rotating mechanism that rotates the substrate holder about a center portion of the substrate being held; a reciprocating mechanism that reciprocates the substrate holder and the rotating mechanism in the moving direction; an ion beam irradiator that irradiates the substrate with an ion beam; and a control device that controls the rotating mechanism and the reciprocating mechanism. The ion beam has a center region where the beam current density is a predetermined value or more in the moving direction, and a peripheral region where the beam current density is less than the predetermined value, a center region size in the direction orthogonal to the moving direction is larger than a substrate size in the direction orthogonal to the moving direction. 1. An ion beam irradiation device , comprising:a vacuum container that is exhausted to vacuum;a substrate holder that holds a substrate in the vacuum container;a rotating mechanism that causes the substrate holder to rotate about a center portion of the substrate being held by the substrate holder;a reciprocating mechanism that reciprocates the substrate holder and the rotating mechanism in a moving direction which is predetermined;an ion beam irradiator that irradiates the substrate being held by the substrate holder with an ion beam; anda control device that controls the rotating mechanism and the reciprocating mechanism,wherein the ion beam has a center region where a beam current density is a predetermined value or more in the moving direction, and a peripheral region which is formed on both sides of the center region and where the beam current density is less than the predetermined value, a center region size in a direction orthogonal to the moving direction is larger than a substrate size in the direction orthogonal to the moving direction, andthe control device reciprocates the substrate being held by the substrate ...

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Номер записи: 98
24-05-2018 дата публикации

TOMOGRAPHY SAMPLE PREPARATION SYSTEMS AND METHODS WITH IMPROVED SPEED, AUTOMATION, AND RELIABILITY

Номер: US20180143110A1
Автор: Audoit Guillaume, Delpy Guillaume, Kwakman Laurens Franz Taemsz, Rue Chad
Принадлежит: FEI COMPANY

Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values. 1. A method for creating a tomography sample from a sample substrate , comprising:(a) identifying a target area and underlying target volume of a substrate containing a region of interest;(b) creating a mill pattern based on the target area and a desired sample pillar height and width;(c) milling a crater asymmetrically positioned around the identified target area to form a sample pillar containing a target volume using a focused ion beam (FIB), (i) the crater large enough to allow a single FIB cut at a desired angle from vertical with respect to the sample pillar orientation to pass within the crater and cut the sample pillar free from the substrate, (ii) the crater having a first depth on a cutting side of the sample pillar of at least the desired sample pillar height and a second, larger, depth opposite the cutting side, the second depth large enough to accommodate the opposite end of the single FIB cut to leave the sample pillar detached after the single FIB cut, (iii) the crater having a first gap between the sample pillar and a crater edge on the cutting side and a second gap, substantially smaller than the first gap, opposite the cutting side;(d) attaching a probe tip of a probe to the sample pillar;(e) cutting the sample pillar free with the single FIB ...

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Номер записи: 99
02-06-2016 дата публикации

ANTENNA ARRANGEMENT

Номер: US20160155601A1
Автор: STAUBER Siegfried
Принадлежит:

An antenna arrangement on a the printed circuit board with at least two magnetic rings and a rectangular ring cross section and lateral magnetic ring surfaces with opposite polarity formed thereby wherein the magnetic ring surfaces are arranged on the printed circuit board with a distance from one another using a spacer, wherein the opposite polarities of the magnetic ring surfaces are oriented towards each other and the central bore holes of the magnetic ring form a pass through bore hole through a bore hole in the spacer. This antenna arrangement is configured for a material detector device which facilitates detecting objects made from a predetermined material over a larger distance. Based on its configuration the antenna arrangement is infinitely expandable in its operation by increasing the number of the magnetic rings and of the respective spacers. Due to its low volume the antenna arrangement can be easily integrated into existing devices and can be produced in a cost effective manner. 1. An antenna arrangement for a material detecting device locating an object made from a particular predeterminable material at a distance of one to two kilometers by emitting an ion beam and receiving a returning ion beam that is reflected by the object , wherein properties of the material to be detected cause a reflection of the ion beam , the antenna arrangement comprising:a printed circuit board including at least electronic circuits and components of an antenna circuit; andan antenna and electrical connection conductors to the antenna,wherein the antenna emits an ion beam and receives a returning ion beam that is reflected by an object that is being located and the antenna circuit generates a transmission signal and processes a return signal,wherein the antenna includes at least two magnetic rings with a rectangular ring cross section and lateral magnetic ring surfaces with opposite polarity forming electrodes which are arranged on the printed circuit board by at least one ...

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Номер записи: 100