ПОКРЫТИЕ ИЗ ГЕТТЕРНОГО МЕТАЛЛИЧЕСКОГО СПЛАВА, А ТАКЖЕ УСТАНОВКА И СПОСОБ ДЛЯ ЕГО ПОЛУЧЕНИЯ

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РЕАКТОРНОЕ УСТРОЙСТВО ДЛЯ ХИМИЧЕСКОГО ОСАЖДЕНИЯ ИЗ ПАРОВОЙ ФАЗЫ (PCVD) НА БОЛЬШОЙ ПЛОЩАДИ И СПОСОБ ОБЕСПЕЧЕНИЯ ТАКОГО ОСАЖДЕНИЯ

Изобретение относится к области активированного микроволновой плазмой химического осаждения из паровой фазы. Технический результат - повышение площади химического осаждения из паровой фазы. Устройство содержит реакторную камеру, приспособленную для обеспечения плазменной зоны внутри реакторной камеры посредством электромагнитной энергии на первой частоте, и составную, направленную вправо/влево CRLH-волноводную секцию, приспособленную для работы с бесконечной длиной волны на первой частоте и имеющую в стенке средство передачи, предназначенное для передачи электромагнитной энергии из внутреннего пространства CRLH-волноводной секции во внутреннее пространство реакторной камеры. 2 н. и 15 з.п. ф-лы, 15 ил.

СВЧ-ПЛАЗМЕННЫЙ РЕАКТОР ДЛЯ ИЗГОТОВЛЕНИЯ СИНТЕТИЧЕСКОГО АЛМАЗНОГО МАТЕРИАЛА

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КАМЕРА ПЛАЗМЕННОЙ ОБРАБОТКИ И СПОСОБ ОБРАБОТКИ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ В ТАКОЙ КАМЕРЕ

Изобретение относится к области электротехники, в частности к травильным камерам с плазмой высокой плотности. Камера содержит электростатический держатель, предназначенный для удержания пластины, и расходуемые части, которые являются в высокой степени устойчивыми к травлению и в меньшей степени восприимчивы к образованию загрязнений и температуру которых можно регулировать, что является техническим результатом изобретения. Расходуемые части содержат вкладыш камеры, имеющий нижнюю секцию крепления, и стенку, которая сконфигурирована таким образом, что она окружает электростатический держатель. Расходуемые части также включают держатель вкладыша, имеющий нижний выступ, гибкую стенку и верхний выступ. Гибкая стенка сконфигурирована таким образом, что она окружает внешнюю поверхность стенки вкладыша камеры, при этом гибкая стенка держателя вкладыша расположена на некотором расстоянии от стенки вкладыша камеры. Нижний выступ держателя вкладыша сконфигурирован так, что он находится в прямом тепловом ...

УСОВЕРШЕНСТВОВАНИЕ ПРОЦЕССА УДАЛЕНИЯ РЕЗИСТА В УСТАНОВКЕ ДЛЯ ТРАВЛЕНИЯ ДИЭЛЕКТРИКА С ИСПОЛЬЗОВАНИЕМПУЧКА ПЛАЗМЫ

Изобретение относится к области изготовления полупроводниковых приборов. Объектами изобретения являются способ и устройство для травления диэлектрика, удаления маски для травления и очистки камеры травления. В камере травления 40 размещают полупроводниковую пластину 56. Выполненный на полупроводниковой пластине диэлектрик 58 подвергают травлению, используя локальную плазму, полученную с помощью специального приспособления для получения локальной плазмы в камере травления. Маску для травления 60 удаляют с помощью плазмы от автономного источника 54, генерируемой в устройстве для получения плазмы от автономного источника, соединенном с камерой травления. Камеру травления после удаления полупроводниковой пластины подвергают очистке, используя при этом или локальную плазму, или плазму от автономного источника. Для достижения более высокой степени очистки может быть использован нагреватель, обеспечивающий нагрев стенки камеры. 2 н. и 12 з.п. ф-лы, 4 ил.

УСТРОЙСТВО ДЛЯ ЛОКАЛЬНОГО ПЛАЗМОХИМИЧЕСКОГО ТРАВЛЕНИЯ ПОДЛОЖЕК

Изобретение относится к устройствам локального травления тонких пленок микроэлектроники. Устройство содержит вакуумную камеру с крышкой, два электрода, системы откачки и напуска плазмообразующего газа, верхний электрод установлен на плите и снабжен шаблоном, установленным на съемной втулке, закрепленной на электроде, и механизмом регулирования параллельности двух электродов относительно друг друга, выполненным в виде трех микрометрических головок, жестко установленных в отверстиях упомянутой плиты с возможностью взаимодействия нижним концом через шаровые опоры соответственно с тремя вертикальными стойками, закрепленными на основании камеры. На каждой стойке выполнены подвижные упоры, взаимодействующие с механизмом регулирования зазора между двумя электродами, выполненным в виде прецизионного подъемника, на котором установлен нижний электрод, являющийся подложкодержателем. Устройство позволяет упростить процесс формирования структур, повысить скорость травления, обеспечивает равномерность ...

УСТРОЙСТВО ОБЛУЧЕНИЯ ЭЛЕКТРОННЫМ ПУЧКОМ И СПОСОБ

Устройство облучения электронным пучком используется для облучения отработавшего газа с продуктами сгорания для удаления токсичных составляющих из отработавшего газа. Устройство содержит источник электронного пучка для излучения электронов, ускорительную трубку для ускорения электронов, излучаемых источником электронного пучка, фокусирующий электромагнит для регулирования диаметра электронного пучка посредством приложения магнитного поля к электронному пучку, имеющему высокую энергию, сформированному в ускорительной трубке, электромагнит для отклонения и сканирования электронного пучка посредством приложения магнитного поля к электронному пучку и окно облучения для прохода электронного пучка. Электронный пучок фокусируется в точке фокуса фокусирующим электромагнитом, так что электронный пучок сходится один раз, затем расходится и затем излучается наружу через окно облучения. Изобретение позволяет предотвратить сходимость электронного пучка в положении максимального сканирования и стабильно ...

ПЛАЗМЕННО-ИММЕРСИОННАЯ ИОННАЯ ОБРАБОТКА И ОСАЖДЕНИЕ ПОКРЫТИЙ ИЗ ПАРОВОЙ ФАЗЫ ПРИ СОДЕЙСТВИИ ДУГОВОГО РАЗРЯДА НИЗКОГО ДАВЛЕНИЯ

Изобретение относится к системе для плазменного напыления покрытий (варианты) и установке для плазменного напыления покрытий (варианты). Система содержит катод магнетрона с длинной кромкой и короткой кромкой. Магнитный полюс магнетрона обеспечивает создание электромагнитного барьера. По меньшей мере один удаленный дуговой разряд зажигается отдельно от катода магнетрона и в непосредственной близости от катода так, что он удерживается в пределах объема вблизи мишени магнетрона. Удаленный дуговой разряд распространяется параллельно длинной кромке мишени магнетрона и ограничивается поверхностью мишени с одной стороны и электромагнитным барьером со всех других сторон. Защитный кожух катода удаленного дугового разряда и защитный кожух анода проходят поверх дугового разряда и поперек короткой кромки катода магнетрона. Снаружи узла формирования плазмы расположена магнитная система, создающая магнитные силовые линии, которые проходят в плазму и удерживают плазму перед подложкой. Технический результат ...

СПОСОБ И УСТРОЙСТВО ДЛЯ ПЛАЗМЕННОЙ ОБРАБОТКИ ВНУТРЕННЕЙ ПОВЕРХНОСТИ ПЛАСТИКОВЫХ БУТЫЛОК

Изобретение относится к производству тары. Техническим результатом является повышение качества обработки и производительности процесса обработки внутренней поверхности пластиковых бутылок. В состав устройства обработки внутренней поверхности бутылки (1) с использованием плазменной технологии входят вакуумная камера (2), микроволновая ловушка (3) с микроволновым генератором (4), средства вакуумирования и средства подвода газа (5). Микроволновая ловушка (3) имеет цилиндрическую форму, отвечающую насколько это возможно по крайней мере форме корпусной части обрабатываемой бутылки (1). Со стороны бутылки (1) в микроволновую ловушку (3) подается микроволновое излучение, и микроволновая ловушка возбуждается по моде ТМ-резонанса. Устройство очень компактно и имеет простую конструкцию. Оно может встраиваться в устройство ориентированного формования раздувом или устройство розлива. Для промышленного применения множество однобутылочных устройств могут устанавливаться в ряд или составлять матрицу, ...

ИНЖЕКТОР И СПОСОБ ДЛЯ ДЛИТЕЛЬНОГО ВВЕДЕНИЯ РЕАГЕНТОВ В ПЛАЗМУ

Изобретения могут найти применение в различных отраслях машиностроения при изготовлении изделий с защитными покрытиями и относятся к области плазменной технологии нанесения покрытий, в частности, к инжекционной системе для инжектирования текучего реагента в поток плазмы, устройствам для нанесения покрытий на подложку и способу нанесения покрытий на подложку. Инжектор, используемый в упомянутых объектах, включает первую часть (6) канала для ограничения потока текучего реагента, имеющую такую форму, что внутренние стенки первой части (2) канала являются параллельными первой оси (9). Инжектор (2) имеет вторую часть канала (8), выполненную с возможностью сообщения текучего реагента с первой частью канала. Вторая часть канала (8) имеет углубление, так что внутренние стенки второй части канала (8) расходятся от первой оси (9) под заданным углом. Инжектор может дополнительно включать часть в виде наконечника, который выступает в плазму. Инжектор может быть встроен в инжекционную систему с возможностью ...

ВЧ-ИСТОЧНИК ПЛАЗМЫ С ПЛАНАРНЫМ ИНДУКТОРОМ ДЛЯ ОБРАБОТКИ ПОЛУПРОВОДНИКОВЫХ ПЛАСТИН ДИАМЕТРОМ ДО 600 мм

Изобретение относится к устройствам, предназначенным для генерации низкотемпературной сильно-ионизованной плазмы. Технический результат – повышение радиальной однородности плазмы низкого давления для обработки полупроводниковых пластин большого диаметра до 600 мм. ВЧ-источник плазмы содержит цилиндрическую вакуумную камеру, герметично разделенную диэлектрическим окном ввода ВЧ-мощности на два объема. В первом объеме производится обработка полупроводниковых пластин посредством воздействия технологической индуктивно-связанной плазмы, второй объем, цилиндрическая стенка и крышка которого изготовлены из диамагнитного материала, предназначен для размещения планарного спирального ВЧ-индуктора. Когда в технологическом объеме производится генерация плазмы в диапазоне рабочих давлений 1-100 мТорр, в объеме индуктора поддерживается давление инертного газа, обладающего высоким потенциалом ионизации, в диапазоне 5-20 Торр, что препятствует возникновению паразитного газового разряда в объеме индуктора ...

Устройство для очистки поверхности образцов для электронной микроскопии

Устройство предназначено для очистки поверхности образцов для электронной микроскопии. Очистка производится с помощью коронного разряда в воздушной среде при атмосферном давлении.Устройство содержит рабочую камеру с закрепленными в ней внешним коронирующим электродом малой площади с иглами на поверхности и опорным электродом-экстрактором, на котором располагается образец. Электроды подключены к вторичной обмотке высоковольтного импульсного трансформатора, на первичную обмотку которого непрерывно подается импульсное напряжение от внешнего источника, которое трансформатором повышается до 10 кВ или больше, что приводит к загоранию коронного разряда над поверхностью очищаемого образца.

Устройство для модификации поверхности материалов посредством плазмы атмосферного давления

Полезная модель относится к плазменной технике, в частности к источникам получения и управления потоком плазмы атмосферного давления, и может быть использована в различных областях науки и техники для модификации, очистки и обеззараживания различных поверхностей в микроэлектронике, оптике, микробиологии и медицине. Технический результат достигается созданием устройства плазмы атмосферного давления со специальной съемной рассеивающей насадкой. В качестве источника питания используется низкочастотный генератор (10-200 кГц). Создание такой насадки позволяет увеличить равномерность и площадь обрабатываемой поверхности различных материалов, что ускоряет процесс модификации в целом. Использование вместо высокочастотного источника питания низкочастотного позволяет упростить устройство. 4 з.п. ф-лы, 3 ил.

ВЫСОКОСКОРОСТНОЙ СПОСОБ ОСАЖДЕНИЯ АЛМАЗНЫХ ПЛЕНОК ИЗ ГАЗОВОЙ ФАЗЫ В ПЛАЗМЕ СВЧ-РАЗРЯДА И ПЛАЗМЕННЫЙ РЕАКТОР ДЛЯ ЕГО РЕАЛИЗАЦИИ

Изобретение может быть использовано при получении поликристаллических алмазных пленок (пластин) для изготовления выходных окон мощных источников СВЧ-излучения. В реакционной камере активизируют газовую смесь водорода и углеводорода путем повышения концентрации электронов в плазме СВЧ-разряда. Образовавшиеся атомы углеродсодержащих радикалов осаждают на подложку, обеспечивая формирование поликристаллической алмазной пленки в результате поверхностных реакций. Активацию указанной газовой смеси осуществляют за счет создания в реакционной камере устойчивой неравновесной плазмы с помощью СВЧ-излучения с мощностью не менее 1 кВт и частотой, много большей обычно используемой частоты 2,45 ГГц. Для локализации плазмы вблизи подложки формируют стоячую волну, в пучностях которой генерируют и поддерживают плазменные слои с возможностью регулирования их размера. Изобретение обеспечивает высокую скорость осаждения алмазных пленок высокого качества на подложки, диаметром более 100 мм. 2 с. и 13 з.п. ф-лы ...

Источник быстрых атомов для травления диэлектриков

Изобретение относится к области обработки изделий ускоренными ионами или быстрыми атомами и предназначено для получения изделий с повышенными характеристиками за счет удаления дефектного поверхностного слоя пучком быстрых атомов. Технический результат - повышение надежности и срока службы источника пучка быстрых атомов аргона при обработке диэлектрических изделий за счет снижения диэлектрических загрязнений на электродах источника. Источник быстрых атомов для травления диэлектриков содержит газоразрядную камеру, цилиндрический полый катод внутри камеры, анод внутри полого катода и перекрывающую выходное отверстие полого катода круглую вогнутую сетку. Напротив сетки установлен экран, проходящий через ее фокальную точку, с отверстием в области фокальной точки. 1 ил.

МАТЕРИАЛ ЭЛЕКТРОДОВ ГЕНЕРАТОРОВ НИЗКОТЕМПЕРАТУРНОЙ ПЛАЗМЫ

Изобретение относится к плазменной технике и может быть использовано для изготовления электродов генераторов низкотемпературной плазмы, обеспечивающих эмиссию электронов и устойчивое горение дуги. Материал электродов генераторов низкотемпературной плазмы содержит пористую металлическую матрицу в виде спеченной смеси медного и железного порошков и эмиттирующий электроны материал в виде окиси иттрия Y2O3 при следующем соотношении компонентов, мас.%: железо 3-30, Y2O3 0,1-1, медь - остальное. 1 табл., 2 ил.

БИОКАРБОН, СПОСОБ ЕГО ПОЛУЧЕНИЯ И УСТРОЙСТВО ДЛЯ ЕГО ОСУЩЕСТВЛЕНИЯ

Изобретение относится к области получения пленок и может быть использовано в медицине, оптике, микроэлектронике. Биокарбон основан из образующих слои линейных цепочках углерода, ориентированных нормально к поверхности слоя и организованных в гексагональные плотноупакованные структуры с расстоянием между цепочками углерода 4,8 - 5,03 . При этом слои идентичны и статически смещены друг относительно друга. Способ получения биокарбона заключается в том, что осуществляют испарение графита в вакууме, создают компенсированные бестоковые форсгустки углеродной плазмы, формируют поток ионов инертного газа и направляют его перпендикулярно потоку компенсированных бестоковых форсгустков углеродной плазмы с последующей конденсацией углерода в виде образующих слои линейных цепочек углерода, ориентированных нормально к поверхности слоя. Устройство для получения биокарбона содержит вакуумную камеру, внутри которой установлены выполненный из графита катод основного разряда, анод основного разряда, поджигающий ...

ПЛАЗМЕННЫЙ РЕАКТОР И УСТРОЙСТВО ДЛЯ ГЕНЕРАЦИИ ПЛАЗМЫ (ВАРИАНТЫ)

Группа изобретений относится к плазменной технике и технологии обработки материалов. Плазменный реактор содержит разрядную камеру с газораспределителем, камеру обработки вещества, магнитную систему, создающую в полости камеры стационарное неоднородное магнитное поле, и узел ввода высокочастотной энергии, состоящий из двух секций. В первом варианте исполнения первая секция выполнена в виде последовательно соединенных участков электрического проводника, которые расположены с внешней стороны диэлектрической стенки разрядной камеры. Ток в размещенных напротив друг друга участках электрического проводника имеет противоположное направление. Вторая секция выполнена в виде спирально изогнутого электрического проводника и размещена с внешней стороны разрядной камеры на одной или нескольких ее диэлектрических стенках. Первая секция установлена над центральной частью разрядной камеры, а вторая секция вокруг первой секции. Во втором варианте исполнения первая секция узла ввода высокочастотной энергии ...

СПОСОБ ПЛАЗМЕННОЙ ОБРАБОТКИ ПОВЕРХНОСТИ И УСТРОЙСТВО ДЛЯ РЕАЛИЗАЦИИ СПОСОБА

... 1. Способ плазменной обработки поверхности подлежащего обработке объекта, включающий создание плазмы и приложение плазмы к подлежащей обработке поверхности, отличающийся тем, что возбуждают подлежащую обработке поверхность или плазму акустически приводят в колебания, так что создается относительное волновое движение между подлежащей обработке поверхностью и плазмой, при этом энергию для возбуждения подлежащей обработке поверхности получают от процесса создания плазмы. 2. Способ по п.1, отличающийся тем, что возбуждение подлежащей обработке поверхности или акустическое приведение в колебания плазмы осуществляют с помощью внешнего генератора колебаний в комбинации с энергией, получаемой в процессе создания плазмы. 3. Способ по любому из п.1 или 2, отличающийся тем, что генерируют ультразвук. 4. Способ по любому из п.2 или 3, отличающийся тем, что частоту колебаний генератора настраивают на частоту, близкую или равную одной из собственных частот подлежащего обработке объекта. 5. Способ по ...

ПЛАЗМЕННЫЕ РЕАКТОРЫ, СОДЕРЖАЩИЕ РЕКУПЕРАТОРЫ

СПОСОБ ОСАЖДЕНИЯ ЭЛЕКТРИЧЕСКИ ИЗОЛИРУЮЩИХ СЛОЕВ

... 1. Способ эксплуатации источника дуги, причем электрический искровой разряд поджигается и управляется на поверхности мишени (5), и искровой разряд управляется одновременно постоянным током, которому сопоставлено постоянное напряжение DV, и вырабатываемым посредством периодически прикладываемого сигнала напряжения импульсным током, отличающийся тем, что напряжение на источнике дуги повышается за несколько микросекунд. ! 2. Способ по п.1, отличающийся тем, что сигнальная форма сигнала напряжения по существу является свободно выбираемой. !3. Способ по п.1, отличающийся тем, что частота сигнала напряжения лежит между 1 Гц и 200 кГц, предпочтительно между 10 Гц и 50 кГц. ! 4. Способ по п.1, отличающийся тем, что сигнальная форма является пилообразной, многоугольником, трапецией, но предпочтительно прямоугольником. ! 5. Способ по п.1, отличающийся тем, что сигнал напряжения прикладывается в режиме с промежутками. ! 6. Способ по п.1, отличающийся тем, что сигнал напряжения при превышении определенного ...

МИКРОВОЛНОВЫЙ ПЛАЗМЕННЫЙ РЕАКТОР ДЛЯ ПРОИЗВОДСТВА СИНТЕТИЧЕСКОГО АЛМАЗНОГО МАТЕРИАЛА

Изобретение относится к области плазменной обработки материалов. Микроволновый плазменный реактор для производства синтетического алмазного материала с помощью химического осаждения из газовой фазы содержит: микроволновый генератор, сконфигурированный для генерации микроволн на частоте f; плазменную камеру, содержащую основание, верхнюю пластину и боковую стенку, простирающуюся от основания до верхней пластины, задавая объемный резонатор, для поддержания микроволновой резонансной моды, причем объемный резонатор имеет центральную вращательную ось симметрии, простирающуюся от основания до верхней пластины, и верхняя пластина установлена поперек центральной вращательной оси симметрии; конфигурацию микроволновой связи для подачи микроволн от микроволнового генератора в плазменную камеру; систему газового потока для подачи технологических газов в плазменную камеру и удаления их оттуда и держатель подложки, расположенный в плазменной камере и содержащий поддерживающую поверхность для поддержания ...

УПРАВЛЯЮЩИЙ МОДУЛЬ ДЛЯ УСТРОЙСТВА ДЛЯ ИОННОЙ ИМПЛАНТАЦИИ

... 1. Управляющий модуль для устройства для ионной имплантации, включающий источник питания, содержащий:- электрогенератор (HT) с заземленным положительным полюсом;- первый переключатель (SW1), первый полюс которого соединен с отрицательным полюсом генератора (HT), и второй полюс которого соединен с выходным разъемом (S) источника питания; и- второй переключатель (SW2), первый полюс которого соединен с выходным разъемом (S), и второй полюс которого соединен с нейтрализующим разъемом (N);отличающийся тем, что он содержит токоизмерительную цепь (AMP) для измерения тока смещения, протекающего между вторым полюсом второго переключателя (SW2) и нейтрализующим разъемом (N).2. Управляющий модуль по п. 1, отличающийся тем, что нейтрализующий разъем (N) заземлен.3. Управляющий модуль по п. 1, отличающийся тем, что нейтрализующий разъем (N) соединен с положительным полюсом источника напряжения, отрицательный полюс которого заземлен.4. Управляющий модуль по любому из пп. 1-3, отличающийся тем, что токоизмерительная ...

СВЧ-ПЛАЗМЕННЫЙ РЕАКТОР ДЛЯ ИЗГОТОВЛЕНИЯ СИНТЕТИЧЕСКОГО АЛМАЗНОГО МАТЕРИАЛА

ИСКРОВОЕ ИСПАРЕНИЕ УГЛЕРОДА

... 1. Способ осуществления импульсного прерывистого искрового разряда, который осуществляется посредством разряда по меньшей мере одного конденсатора, и соответствующим током разряда управляют посредством периодического подключения и отключения конденсатора, причем при отключенном конденсаторе в течение временных интервалов отключения не подают ток от источника питания, отличающийся тем, что в течение временных интервалов подключения ток разряда при достижении предварительно установленной величины кратковременно прерывают, и это приводит в пределах импульса к образованию подимпульсов.2. Способ по п.1, отличающийся тем, что по меньшей мере первое множество временных интервалов отключения выбирают настолько короткими, что по истечении соответствующего времени подключения конденсатора без труда происходит повторное зажигание искрового разряда.3. Способ по п.1 или 2, отличающийся тем, что первое зажигание искрового разряда осуществляют посредством устройства зажигания, предпочтительно посредством ...

Устройство для гашения дуги в газоразрядном приборе

Изобретение относится к электротехнике. Параллельно газоразрядному прибору включен датчик напряжения, оба выхода которого подключены ко входам автономного блока формирования управляющих импульсов. Между промежуточным выводом первичной обмотки насыщающегося трасформатора и положительным выводом выпрямителя включены последовательно соединенные дроссель и диод, анод которого подключен к промежуточному выводу указанной обмотки трансформатора. При этом достигается одинаковая эффективность использования газоразрядного прибора для проведения технологического процесса при различных величинах разрядного тока. 1 ил.

Mikrowellenplasma-Bearbeitungssystem

Plasmabearbeitungsverfahren und -vorrichtung

Device for plasma-treating a container for inner coating of the container, comprises an evacuatable treatment chamber, an electrode to generate plasma in the container, and a transport unit to move the container into the treatment chamber

The device (1) for plasma-treating a container (4) for inner coating of the container, comprises an evacuatable treatment chamber (2), an electrode (6) for generating plasma in the container, and a transport unit (3) to move the container into the treatment chamber relative to the electrode. The electrode is arranged outside of the treatment chamber. A dielectric wall section containing plastic is formed in the treatment chamber to couple electromagnetic energy with the electrode in the treatment chamber. The electrode is divided into two segments. The device (1) for plasma-treating a container (4) for inner coating of the container, comprises an evacuatable treatment chamber (2), an electrode (6) for generating plasma in the container, and a transport unit (3) to move the container into the treatment chamber relative to the electrode. The electrode is arranged outside of the treatment chamber. A dielectric wall section containing plastic is formed in the treatment chamber to couple electromagnetic ...

VERFAHREN ZUR ERZEUGUNG VON SCHICHTEN AUS HARTEN KOHLENSTOFFMODIFIKATIONEN UND VORRICHTUNG ZUR DURCHFUEHRUNG DES VERFAHRENS

Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen

Begrenzung von Sekundärelektronen bei der Plasmaionenbehandlung

PLASMA-GESTALTUNGS-EINBUCHTUNG ZUR STEUERUNG VON ZERSTAEUBUNGSAETZVERFAHREN

VORRICHTUNG ZUM BESCHICHTEN VON SUBSTRATEN

Vorrichtung zum Abscheiden von dünnen Schichten

BOGENBESCHICHTUNG VON FEUERFESTEN METALLVERBINDUNGEN.

ABSTIMMBARES MEHRZONEN-GASINJEKTIONSSYSTEM

Mikrowellenplasmaerzeugungsvorrichtung und Verfahren zu deren Betrieb

Die vorliegende Erfindung beinhaltet eine Mikrowellenplasmaerzeugungsvorrichtung mit einer Plasmakammer. Außerhalb der Plasmakammer ist wenigstens eine Mikrowellenerzeugungsvorrichtung vorgesehen, deren Mikrowellen über wenigstens eine Mikrowelleneinkoppelvorrichtung in die Plasmakammer eingekoppelt werden. Die Mikrowelleneinkoppelvorrichtung weist einen durch wenigstens eine Kammerwand der Plasmakammer in die Plasmakammer führenden Innenleiter, ein den Innenleiter einschließendes und den Innenleiter von einem Innenraum der Plasmakammer abtrennendes Isolierrohr und wenigstens einen durch die wenigstens eine Kammerwand in die Plasmakammer führenden, koaxial, aber nicht vollumfänglich um den gesamten Innenleiter vorgesehenen Außenleiter auf. Der Außenleiter besitzt in der Plasmakammer wenigstens ein Außenleiter-Ende. Der Innenleiter und der Außenleiter bilden eine Mikrowellenleitung aus, wobei in der Plasmakammer ein Austritt von Mikrowellen aus der Mikrowellenleitung zur Erzeugung eines ...

Plasmabehandlungsvorrichtung.

Verfahren zur Steuerung eines Lichtbogenpunktes beim Vacuumbeschichten mittels Lichtbogenentladung und eine Verdampfungsquelle

MAKROTEILCHENFILTER IN LICHTBOGENQUELLE

Methode zur Steuerung von Plasmaverfahren

Plasmaquelle und Herstellungsverfahren

Verfahren zur Erzeugung eines Plasmas durch Einstrahlung von Mikrowellen

The invention relates to a method for producing plasma by microwave irradiation, wherein a process gas is conducted into a container and a plasma is ignited by means of microwave irradiation. According to the invention, the injected microwave radiation is pulsed. This enables the same process result to be obtained at lower effective microwave output so that the process temperature can be scaled down. The process rate can also be increased at effectively the same injection output, thereby reducing process time and increasing charge quantities to a considerable degree.

Verfahren und Gerät zur Ionenimplantierung und Oberflächenbehandlung

INDUKTIVER PLASMAREAKTOR IM UNTEREN HOCHFREQUENZBEREICH

VORRICHTUNG FUER DIE CHEMISCHE WAERMEBEHANDLUNG VON METALL BEI ELEKTRISCHER GLIMMENTLADUNG

Mikrowellenreaktor und Verfahren zur Steuerung von Reaktionen von aktivierten Molekülen

BESCHICHTUNGSKAMMER MIT GEREGELTER ZUSAMMENSETZUNG DER GASATMOSPHAERE.

Vorrichtung zum Beschichten von Substraten.

VORRICHTUNG ZUR PLASMAERZEUGUNG

EINRICHTUNG ZUR BEHANDLUNG VON WERKSTÜCKEN IN EINEM NIEDERDRUCK-PLASMA

Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld.

Gerät zur Bearbeitung mittels Mikrowellen in einem magnetischen Feld.

Verfahren und Vorrichtung zur Ionenätzung.

Schichtabscheidungssystem und Schichtabscheidungsverfahren unter Verwendung desselben

Plasmaversorgungseinrichtung

Elektrodenanordnung für ein behindertes Plasma

Eine Elektrodenanordnung zur Ausbildung eines dielektrisch behinderten Plasmas zwischen einer Wirkfläche (10) der Elektrodenanordnung und einer als Gegenelektrode fungierenden Oberfläche, mit einer flexiblen, flächigen Elektrode (8), die mit einer Hochspannungsquelle (28) verbindbar ist und mit einem flächigen, flexiblen und die Wirkfläche (10) bildenden Dielektrikum (9), das mit der flächigen Elektrode (8) zu einem Elektrodenelement (7) verbunden ist und die Elektrode (8) zur zu behandelnden Oberfläche hin vollständig abdeckt, weist eine verbesserte Anpassbarkeit an unregelmäßige Oberflächen auf durch ein flächenelastisches Andruckmittel (4) zum Andruck auf der der Oberfläche abgewandten Rückseite des Elektrodenelements (7) derart, dass das Elektrodenelement (7) unter lokaler Verformung an Unregelmäßigkeiten der Oberfläche selbsttätig anpassbar ist.

VORRICHTUNG ZUM GENERIEREN EINES PLASMAS BEI PLASMAGEFÜHRTER MIKROWELLENVERSORGUNG

Vorrichtung aufweisend einen länglichen rechteckigen Wellenleiter zur Anbringung in einer Reaktionskammer, worin eine der vier Wände des Wellenleiters entfernt ist und ein aus Mikrowellen durchdringbarem Material gebildeter Streifen anstelle dieser Wand angebracht ist, so dass für den Fall, dass Mikrowellenenergie an dem Wellenleiter angelegt wird, ein Plasma in dem Grenzbereich zwischen dem dielektrischen Streifen und dem Volumen der Reaktionskammer erzeugt wird, wobei sich die Mikrowellenenergie durch interne Reflektionen entlang des Streifens aus Mikrowellen durchdringbarem Material ausbreitet und damit das Plasma bewirkt, welches entlang der gesamten Länge des Wellenleiters zu erzeugen ist.

Radiofrequenzenergie-Tastkopf mit thermisch leitender Hülse

VORRICHTUNG ZUR PLASMABEHANDLUNG VON SUBSTRATEN IN EINER DURCH HOCHFREQUENZ ANGEREGTEN PLASMAENTLADUNG

VERFAHREN ZUR HERSTELLUNG EINER DUENNSCHICHTSSOLARZELLE.

The glimmer process allows formation of characteristic stable products via a reaction carried out in a reaction space containing given reactants. The formation of the stable reaction products is monitored via a mass spectrometer outside the reaction space. The mass spectrometer is pref. used to track the partial press variation of carbon monoxide, carbon dioxide and/or methane.

Hochfrequenz-Anpassungseinheit

Electron cyclotron resonance apparatus

A electron cyclotron resonance apparatus which is capable of producing a cryogenic cooling effect. As a result of a radioactive movement (motion) property of radicals, a side-wall etching of a photoresist can be prevented during the production of integrated micropatterns of the next generation. The apparatus also eliminates mutually contradictory growth/reduction phenomena which arise between the etching rate and the anisotropy as well as between the etching rate and the uniformity of the general etching devices. This not only achieves a desired vertical etching but also a rapid etching rate. It is thus possible to eliminate factors which create a complexity in the process, to be specific by using a conventional three-layer P/R (TLR) or a multi-layer P/R (MTR), and which adversely affect the yield and the productivity.

Verfahren zur Steuerung der Leistungsverteilung bei bipolaren Niederdruck-Glimmprozessen

The known processes require a considerable amount of apparatus for low-pressure glow discharges in order to distribute the generator output to the two electrodes and to control it statically and dynamically. Up until now it has not been possible to achieve this control for high energies and over a great range of frequencies. A process variable measured in-situ should be controllable and adjustable. According to the invention, the direct voltage is produced by means of a four-quadrant d.c. power supply. For this the d.c. power supply is decoupled on the alternating voltage side and connected with one pole to the alternating power supply and with the other pole to an electrode of the bipolar glow device. The direct voltage is set dependent upon a process variable of the glow discharge so that a specific ratio in the power distribution between the two electrodes results. The invention is applicable in plasma treatment of surfaces, deposition of coatings from the plasma and plasma enhanced ...

Vorrichtung zur Behandlung von durch einen Wickelmechanismus bewegten bahnförmigen Materialien mittels eines reaktiven bzw. nichtreaktiven, durch Hochfrequenz- oder Pulsentladung erzeugten Niederdruckplasmas

Waferelektronenentladungskontrolle

Vorrichtung zum Erzeugen und Aufrechterhalten eines Plasmas zur Plasmabearbeitung

Vorrichtung, umfassend:a. einen Resonanzkreis (11) mit einer Resonanzkapazität und einer Resonanzi nd u ktivität;b. einen Anregungskreis (36) zum Anregen des Resonanzkreises (11); undc. ein Kopplungselement (16) zum Koppeln von HF-Leistung von der Induktivität in eine Plasmakammer (17), wobei die Vorrichtung so konfiguriert ist, dass sie Plasma erzeugt und aufrechterhält für die Plasmabearbeitung mittels induktiv gekoppelter HF-Leistung, wobei der Resonanzkreis (11) zwei Resonanzspulen (12, 13) aufweist, die zusammen die Resonanzinduktivität bilden und wobei jede Resonanzspule (12, 13) eine Verbindung zur Resonanzkapazität aufweist, wobei zumindest eine Zündkapazität (20) vorgesehen ist, die mit einem Verbindungspunkt (22) zwischen der Resonanzkapazität und einer der Resonanzspulen (12) und mit einer Platte (18) in der Plasmakammer (17) verbindbar ist.

Verfahren zur Plasmabehandlung und Apparat dafür

MIKROWELLEN CVD-VERFAHREN ZUM AUFTRAGEN ROBUSTER SPERRSCHICHTEN

VERFAHREN UND VORRICHTUNG ZUR TEMPERATURREGELUNG IN EINER PLASMA-BEHANDLUNGSKAMMER

Befestigungseinheit für Zündeinheiten und Vorrichtung zur Kohlenstoffabscheidung

Es wird eine Befestigungseinheit (82) für Zündeinheiten und eine Vorrichtung zur Kohlenstoffabscheidung vorgeschlagen. Die Befestigungseinheit der Vorrichtung weist eine erste und eine zweite Halterung (85, 90) auf, wobei die Zündeinheit (20) zwischen den beiden Halterungen (85, 90) angeordnet ist und die Halterungen (85, 90) durch mindestens ein Befestigungsmittel (95) zusammengehalten werden. Die erste Halterung (85) weist dabei eine Ebene (100) auf, die gegenüber der Längsachse der ersten Halterung (85) einen ersten Winkel (110) zwischen 0 DEG und 45 DEG aufweist. Die Zündeinheit (20) ist so angeordnet, dass die Stirnseite (55) der Zündeinheit (20) einen rechten Winkel zur Ebene (100) bildet.

Plasmabehandlungsgerät

Selectiver Absorber zur Umwandlung von Sonnenlicht in Wärme, ein Verfahren und eine Vorrichtung zu dessen Herstellung

Bisherige selektive Absorber mit guten optischen Eigenschaften werden mittels dünner, poröser Schichten hergestellt. Diese weisen Probleme bei Belastungen durch hohe Temperatur oder Feuchte auf. Der hier offenbarte selektive Absorber soll die Vorteile vom Stand der Technik aufweisen und zudem bei hohen Belastungen stabil bleiben. DOLLAR A Der selektive Absorber zur Umwandlung des Sonnenlichtes in Wärme gemäß Anspruch 1 besteht aus dünnen Schichten auf einem Substrat, vorzugsweise Aluminium, Kupfer oder Stahl. Die dünnen Schichten bestehen ihrerseits aus zwei Schichtsystemen. Das erste, das am Substrat angrenzende System enthält mindestens eine Schicht aus dichtem, d. h. leerraumfreiem Material aus Titan, Aluminium, Stickstoff, Kohlenstoff und Sauerstoff. Dieses Material weist die chemische Formel Ti¶alpha¶Al¶beta¶N¶x¶C¶y¶O¶z¶ auf. Das darüber liegende zweite System enthält mindestens eine Schicht, die aus einem Gemisch aus TiO¶z¶ und Al¶2¶O¶3¶ besteht.

Verfahren und Einrichtung zum Kracken von Gasen fuer Syntheseprozesse

MULTIFUNKTIONALER VERFAHRENSRAUM FÜR CVD-VERFAHREN

Trockenätzungsvorrichtung und Elektrode davon

Die Erfindung offenbart eine Trockenätzungsvorrichtung und eine Elektrode davon. Die Elektrode weist auf: eine Elektrodenbasis; eine Isolationsschicht, welche auf der Elektrodenbasis angeordnet ist; und eine Randstufe, welche umfänglich auf der Isolationsschicht angeordnet ist, wobei die Randstufe mindestens eine Stütze für mindestens einen Heberstift der Trockenätzungsvorrichtung aufweist; wobei die Randstufe verschiedene Prägungen aufweist, welche umfänglich auf der Randstufe angeordnet sind. Die verschiedenen Prägungen sind umfänglich auf der Randstufe der Elektrode von der Trockenätzungsvorrichtung derart angeordnet, dass kleine Lücken um die verschiedenen Prägungen herum zwischen dem Substrat und der Randstufe bestehen. Daher kann die Kraft eines Anhaftens zwischen dem Substrat und der Randstufe reduziert werden, das Phänomen eines Ansaugens kann effizient verbessert werden, die Ausbeute bzw. Produktion des geätzten Substrats kann verbessert werden, und die Lebensdauer der Elektrode ...

VERFAHREN UND VORRICHTUNG ZUR UEBERWACHUNG VON STROMSTARKEN GLIMMENTLADUNGEN

PLASMA-REACTOR AND ITS USE IN ETCHING AND COATING SUBSTRATES

VERFAHREN UND VORRICHTUNG ZUR GEZIELTEN TEILCHENMANIPULIERUNG UND -DEPOSITION

PROCESS AND APPARATUS FOR CLEANING WALL DEPOSITS FROM A FILM DEPOSITION FURNACE TUBE

Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer

Anordnung zur Wärmebehandlung von Siliziumscheiben in einer Prozesskammer, in der die zu beschichtende Siliziumscheibe, zum Schutz der Prozesskammer gegen Niederschlag, von Linerplatten umgeben ist, dadurch gekennzeichnet, dass die Linerplatte (7) geteilt ausgeführt ist.

HOCHFREQUENZ-AETZTISCH MIT ELEKTRISCH VORGESPANNTEM EINFASSUNGTEIL

Vorrichtung zum Beschichten eines Substrats

Trockenätzverfahren und Trockenätzvorrichtung

Trockenätzverfahren zum Aufrauen einer Oberfläche eines Substrates (1) mittels reaktiven Ionenätzens, wobei das Verfahren aufweist: Anordnen des Substrates (1) an einer RF-Elektrode (9) in einer Kammer; Anordnen einer Platte (13), über dem Substrat (1) mit einer Distanz (D) zwischen der Platte (13) und einer Oberfläche des Substrates (1), wobei die Platte (13) mit einer Anzahl von Öffnungsabschnitten (14) versehen ist, wobei jeder Öffnungsabschnitt (14) eine solche Größe besitzt, dass eine virtuelle Säule (18) mit einem Durchmesser (R) kleiner gleich der Hälfte (1/2) der Distanz (D) durch den Öffnungsabschnitt (14) hindurchtreten kann, während eine virtuelle Säule (18) mit einem Durchmesser größer als die Hälfte der Distanz (D) daran gehindert wird, durch den Öffnungsabschnitt (14) hindurchzutreten, wobei die Distanz (D) zwischen der Platte (13) und der Oberfläche des Substrates (1) 5 bis 30 mm beträgt.

Plasmabearbeitungsvorrichtung

Die vorliegende Erfindung betrifft eine Plasmabearbeitungsvorrichtung zur Bearbeitung wenigstens eines flächigen Substrates in einer Substratdurchlaufanlage, wobei die Plasmabearbeitungsvorrichtung aufweist: wenigstens eine Substratträgerelektrode, auf welcher das Substrat aufliegend durch die Substratdurchlaufanlage transportierbar ist und welche gleichstrommäßig isoliert gegenüber Massepotenzial geführt wird; eine flächenhaft ausgebildete Hochfrequenz-Elektrode, die an einem Wechselspannungspotenzial anliegt und in einem Abstand über dem wenigstens einen auf der Substratträgerelektrode aufliegenden Substrat vorgesehen ist, eine topfförmig über der Substratträgerelektrode ausgebildete Dunkelraumabschirmung, wobei der offene Bereich der topfförmigen Dunkelraumabschirmung auf das wenigstens eine Substrat gerichtet ist und die topfförmige Dunkelraumabschirmung einen die Dunkelraumabschirmung nach außen verbreiternden Rand aufweist, der dicht über der Substratträgerelektrode und parallel zu ...

Plasma reactor for diamond layer deposition

The invention concerns a plasma reactor for generating and maintaining plasma. The plasma reactor comprises a resonant cavity (11) whose cross-section tapers in summit regions (13, 16) in which the wall (14) of the resonant cavity (11) is closed to such an extent that an excited field mode in the region of the cross-sectional tapered portions displays main peaks (15, 31) whose maximum field intensity is increased with respect to the field intensity of adjacent secondary peaks. A reaction unit (18) is provided in the region of a main peak (31) with a substrate (21) which is to be processed and which can be coated in the gas phase of the plasma (32). As a result of the field intensity distribution brought about by a resonant cavity (11) of the given shape, with main peaks (15, 31) which are greatly increased with respect to secondary peaks, process parameters such as gas pressure and coupled electromagnetic power can be selected very largely independently of one another when the plasma (32 ...

Reactor for plasma deposition of semiconductor material on substrates with electrodes

Substrates are coated with semiconductor material, e.g. amorphous Si for solar electrodes, in a plasma excited with electromagnetic waves in a reactor contg. electrodes, on which the substrates are positioned. Electrodes have a graphite coating, 9 - 20 mu thick. The coating is pref. deposited in a plasma contg. CH4 or C2H2 and the electrodes are pref. made of Al.

Wärmeschutzvorrichtung für Dichtungsringe in einem Plasmaerzeugungsgerät

Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten

RINGFÖRMIGE HOCHDICHTE PLASMAQUELLE UND VERFAHREN

Anordnung zur Erzeugung eines Niedertemperaturplasmas durch eine magnetfeldgestützte Kathodenentladung

Eine Anordnung zur Erzeugung eines Niedertemperaturplasmas im Druckbereich von 10·-5· bis 10·-1· mbar mittels einer magnetfeldgestützten niederfrequenten Kaltkathodenentladung besteht aus mehreren Kathoden, die zusammen mit Permanentmagneten Magnetkreise bilden, die magnetische Felder im Inneren der Anordnung erzeugen. Mindestens zwei zwischen den Kathoden angeordnete Elektroden werden alternierend mit Frequenzen kleiner 100 kHz auf die Entladung erzeugende Spannung gelegt. Unterschiedliche geometrische Ausführungen dieser Anordnung wie rotationssymmetrische, ebene koaxiale oder rechteckige Formen sind möglich. Zur Erzeugung stromstarker industrieller Plasmen können mehrere erfindungsgemäße Anordnungen linear nebeneinander oder rasterförmig in einer Fläche kombiniert werden. Mit einer Kaltkathodenentladung in dieser Anordnung können leistungsfähige Niedertemperaturplasmen aus reaktiven (z. B. beschichtenden oder ätzenden) Gasen erzeugt werden, die sowohl in Plasmaquellen als auch in Ionenquellen ...

Anordnung zur Erzeugung eines Niedertemperaturplasmas durch eine magnetfeldgestützte Kathodenentladung

ELECTRIC ARC APPARATUS AND METHOD FOR TREATING A FLOW OF MATERIAL BY AN ELECTRIC ARC

Ferroelectric plasma reactor stabilization device uses ferroelectric barrier inserted between field electrodes and ferroelectric ceramic pellets

The stabilization device is provided by at least one closed ferroelectric barrier (3), inserted between the field electrodes (1) and the ferroelectric ceramic pellets (2) of the ferroelectric plasma reactor. The thickness and the surface of the ferroelectric barrier is selected to provide an electrical capacitance matched to the capacitance of the ferroelectric ceramic pellets. An Independent claim for a thermic auto-stabilization method for a ferroelectric plasma reactor is also included.

Medium to high frequency PECVD process for functional layer deposition on a moving substrate

A PECVD process, for functional layer deposition on a moving substrate, uses a tunnel-shaped magnetic field (11) to increase the plasma density above the substrate (4). A medium frequency (1-500 kHz) or high frequency (500 kHz to a few MHz) PECVD process, for functional layer deposition on the front face of a moving substrate acting as counter-electrode to a plate electrode, employs one or more tunnel-shaped magnetic fields (11) passing through the substrate (4) to produce an increased plasma density over the substrate. An Independent claim is also included for an apparatus for carrying out the above process, including a magnet system (6) positioned below the back face (9) of the substrate.

Vakuumplasmagenerator

Vakuum-Substratbehandlungsanlage

Horizontale Vakuum-Durchlaufbeschichtungsanlage, umfassend mindestens eine Eingangsschleuse, mindestens eine Ausgangsschleuse sowie zwischen Eingangsschleuse und Ausgangsschleuse mindestens eine Beschichtungskammer mit mindestens einer Beschichtungseinrichtung und eine Transporteinrichtung, die sich im Innern der Vakuum-Durchlaufbeschichtungsanlage von der Eingangsschleuse bis zur Ausgangsschleuse erstreckt und zum Transport plattenförmiger Substrate in horizontaler Lage ausgebildet ist, wobei an mindestens einer Stelle des durch die Transporteinrichtung definierten Transportwegs der Substrate oberhalb der Transporteinrichtung eine horizontale Wand (18) angeordnet ist, die eine obere Begrenzung eines Gasseparationstunnels bildet und die von an der Kammerwand (1, 2) angeordneten Konsolen (8) abgestützt ist, dadurch gekennzeichnet, dass die Konsolen (8) an der Kammerwand (1, 2) fest angebracht sind und zwischen den Konsolen (8) und der horizontalen Wand (18) auswechselbare Abstandhalter ( ...

Устройство плазмодинамической очистки сточных вод

Полезная модель относится к области обработки промышленных и бытовых сточных вод, а именно к устройствам плазмодинамической очистки, и может быть использована на предприятиях пищевой промышленности, а также в крупных животноводческих комплексах, в том числе, совместно с биогазовыми установками. Устройство плазмодинамической очистки сточных вод содержит реакционную камеру с входным жидкостным, входным воздушным и выходным каналами. В противоположных стенках камеры установлены электроды, один из которых является катодом, а другой - анодом. Входной воздушный канал выполнен непосредственно в катоде вдоль его продольной оси. Полезная модель позволяет увеличить эффективный реакционный объем и, как следствие, повысить эффективность устройства. 1 з.п. ф-лы, 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 186 727 U1 (51) МПК C02F 1/46 (2006.01) A61L 2/14 (2006.01) H05H 1/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК C02F 1/46 (2006.01); A61L 2/14 (2006.01); H05H 1/00 (2006.01) (21)(22) Заявка: 2017136325, 13.10.2017 (24) Дата начала отсчета срока действия патента: (73) Патентообладатель(и): ООО "ПлазмоТех" (RU) Дата регистрации: 30.01.2019 (56) Список документов, цитированных в отчете о поиске: KR 101108146 B1, 20.02.2012. RU 82297 U1, 20.04.2009. US 2006/0060464 A1, 23.03.2006. (45) Опубликовано: 30.01.2019 Бюл. № 4 R U (54) УСТРОЙСТВО ПЛАЗМОДИНАМИЧЕСКОЙ ОЧИСТКИ СТОЧНЫХ ВОД (57) Реферат: Полезная модель относится к области выходным каналами. В противоположных обработки промышленных и бытовых сточных стенках камеры установлены электроды, один из вод, а именно к устройствам плазмодинамической которых является катодом, а другой - анодом. очистки, и может быть использована на Входной воздушный канал выполнен предприятиях пищевой промышленности, а также непосредственно в катоде вдоль его продольной в крупных животноводческих комплексах, в том оси. Полезная модель позволяет увеличить числе, совместно с биогазовыми ...

Method and apparatus for removing photoresist

A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

Electrode and plasma processing apparatus

Electric field intensity distribution of a high frequency power for plasma generation can be controlled without generating abnormal electric discharge. There is provided an electrode for a plasma processing apparatus capable of supplying a gas. The electrode may include a base member 105 a made of a dielectric material and having therein a certain space U; a cover 107 for airtightly sealing the space U and isolating the space U from a plasma generation space when the electrode is installed at the plasma processing apparatus; and multiple gas hole tubes 105 e passing through the cover member 107 , the space U and the base member 105 a . Each gas hole tube has a gas hole isolated from the space U.

View port device for plasma process and process observation device of plasma apparatus

A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.

Measuring and controlling wafer potential in pulsed rf bias processing

Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.

Sensor for measuring plasma parameters

A method of measuring ion current between a plasma and an electrode in communication with the plasma is disclosed. A time-varying voltage at the electrode and a time- varying current through the electrode are measured. The method comprise recording, for each of a plurality of voltage values, v′, a plurality, n, of current values I(v′); and obtaining from the current and voltage values a value of the ion current. The electrode is insulated from the plasma by an insulating layer, so that the current values lack a DC component. The method includes performing a mathematical transform effective to: express the current and voltage values as a relationship between the real component of current through the electrode and the voltage, thereby eliminating a capacitive contribution to the current through the electrode; isolate from the real component of current through the electrode an isolated contribution attributable to an ion current and a resistive term, the contribution being free of any electron current contribution; and determine from the isolated contribution a value of ion current.

Ion energy analyzer and methods of manufacturing the same

A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Methods of electrical signaling in an ion energy analyzer

A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Plasma Processing Apparatus

A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring.

Method and system for monitoring an etch process

A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.

Plasma processing apparatus

A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

Methods for automatically determining capacitor values and systems thereof

A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode.

Gasket with positioning feature for clamped monolithic showerhead electrode

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

INDUCTIVELY COUPLED PLASMA GENERATION DEVICE

Provided is an inductively coupled plasma generation device capable of having both a wide matching range and reduced loss. An inductively coupled plasma generation device in which high harmonic waves from a high harmonic wave power source () are supplied to an antenna () by way of a matching device () which matches impedance, and plasma is generated in a vacuum vessel by electromagnetic waves from the antenna (), wherein an L-type matching circuit is used as the matching device () and a capacitor (C) is provided parallel to the antenna () at a position closer to the antenna () than capacitors (C, C) in the L-type matching circuit. 1. An inductively coupled plasma generation device for generating plasma in a vacuum chamber by use of an electromagnetic wave from an antenna obtained by supplying a high-frequency wave from a high-frequency power source to the antenna through a matching box configured to perform impedance matching , whereinan L-type matching circuit is used as the matching box, andanother capacitor is provided parallel to the antenna at a position closer to the antenna than capacitors in the L-type matching circuit.2. The inductively coupled plasma generation device according to claim 1 , wherein a commercially available capacitor is used as said another capacitor.3. The inductively coupled plasma generation device according to claim 1 , whereina circumference of the antenna is surrounded by a grounded cylindrical housing while a cylindrical member coaxial with the housing is provided to a transmission line on a higher voltage side connected to the antenna, to thereby form a coaxial capacitor with the housing and the cylindrical member, andthe coaxial capacitor is used as said another capacitor.4. The inductively coupled plasma generation device according to claim 1 , whereina cylindrical member with a center axis thereof being set on a transmission line on a higher voltage side connected to the antenna is provided to a transmission line on a ground side ...

AUTONOMOUS METHOD AND SYSTEM FOR MINIMIZING THE MAGNITUDE OF PLASMA DISCHARGE CURRENT OSCILLATIONS IN A HALL EFFECT PLASMA DEVICE

An autonomous method for minimizing the magnitude of plasma discharge current oscillations in a Hall effect plasma device includes iteratively measuring plasma discharge current oscillations of the plasma device and iteratively adjusting the magnet current delivered to the plasma device in response to measured plasma discharge current oscillations to reduce the magnitude of the plasma discharge current oscillations. 1. An autonomous method for minimizing the magnitude of plasma discharge current oscillations in a Hall effect plasma device , the method comprising:iteratively measuring plasma discharge current oscillations of the plasma device;iteratively adjusting the magnet current delivered to the plasma device in response to measured plasma discharge current oscillations to minimize the magnitude of the plasma discharge current oscillations.2. The method of in which adjusting the magnet current delivered to the plasma device in response to the measured plasma discharge current oscillations is constrained by the DC value of the plasma discharge current.3. The method of further including iteratively measuring the AC component magnitude of the plasma discharge current oscillations.4. The method of further including determining the root-mean-square (RMS) value of the plasma discharge current oscillations.5. The method of further including calculating the slope of the AC component value as a function of the magnet current.6. The method of further including determining if the slope is positive or negative.7. The method of further including changing magnet current set point by a predetermined amount in response to the determined slope.8. The method of further including decreasing the magnet current set point when the slope is positive and increasing the magnet current set point when the slope is negative.9. The method of further including determining if the magnet current set point is within an allowable range of magnet current for a given plasma device operating point. ...

Mixed mode pulsing etching in plasma processing systems

A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.

ESC WITH COOLING BASE

An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. An ESC assembly includes a 2-stage design where a heat transfer fluid inlet (supply) and heat transfer fluid outlet (return) is in a same physical plane. The 2-stage design includes an assembly of a base upon which a ceramic (e.g., AlN) is disposed. The base is disposed over a diffuser which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. Affixed to the diffuser is a reservoir plate which is to provide a reservoir between the diffuser and the reservoir plate that supplies fluid to the diffuser. Heat transfer fluid returned through the diffuser is passed through the reservoir plate. 1. A chuck to support a workpiece during plasma processing , the chuck comprising:a base over which the workpiece is to be disposed;a diffuser over which the base is to be disposed; anda reservoir plate over which the diffuser is disposed, wherein the diffuser comprises a plurality of supply openings passing through the diffuser and placing a bottom surface of the base in fluid communication with a supply reservoir disposed between the diffuser and the reservoir plate.2. The chuck of claim 1 , wherein the plurality of supply openings comprises at least fifty openings arranged with azimuthal symmetry about a circular area of the diffuser.3. The chuck of claim 1 , wherein the diffuser further comprises at least one return opening passing through diffuser and coupled with a return conduit that passes through the supply reservoir and with a return opening in the reservoir plate.4. The chuck of claim 3 , wherein at least a first of the base and the diffuser comprises a plurality of bosses in physical contact with a second of the base and the diffuser claim 3 , wherein the plurality of bosses define at least one annular channel that places the plurality of supply openings in fluid communication with the at least one return ...

DISTRIBUTED ELECTRO-STATIC CHUCK COOLING

Embodiments of the invention include an apparatus, system, and method for cooling a pedestal for supporting a workpiece during plasma processing. An embodiment of a pedestal includes: a base over which the workpiece is to be disposed, a plurality of nozzles to supply a fluid from a supply plenum to impinge on a surface of the base, and a plurality of return conduits to return the supplied fluid to a return plenum. The fluid to be supplied by the plurality of nozzles can be projected as one or more jets submerged in surrounding fluid or as a spray that emerges from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge on the surface of the base. 1. A pedestal to support a workpiece during plasma processing , the pedestal comprising:a base over which the workpiece is to be disposed;a plurality of nozzles to supply a fluid from a supply plenum to impinge nonparallelly on a surface of the base;a plurality of return conduits to return the supplied fluid to a return plenum.2. The pedestal of claim 1 , wherein the plurality of nozzles is to project the fluid as one or more jets submerged in surrounding fluid within a volume between the plurality of nozzles and the base to impinge nonparallelly on the surface of the base.3. The pedestal of claim 1 , wherein the plurality of nozzles is to project the fluid as a spray to emerge from a surrounding fluid within a volume between the plurality of nozzles and the base to impinge nonparallelly on the surface of the base.4. The pedestal of claim 1 , wherein a top surface of each of the plurality of nozzles is spaced a distance away from the surface of the base.5. The pedestal of claim 1 , wherein the fluid is a liquid.6. The pedestal of claim 1 , wherein:the base is disposed over a distribution plate comprising the plurality of nozzles and the plurality of return conduits;the distribution plate is disposed over the supply plenum; andthe supply plenum is disposed over and separated from the ...

Inline Capacitive Ignition of Inductively Coupled Plasma Ion Source

An ion source is disclosed that utilizes a capacitive discharge to produce ignition ions, which are subsequently used to ignite an inductively coupled plasma within a plasma chamber. In some embodiments, a capacitive discharge element is located along a gas feed line at a position that is upstream of a plasma chamber. The capacitive discharge element ignites a capacitive discharge within the gas feed line. The capacitive discharge contains ignition ions that are provided to a downstream plasma chamber. An inductively coupled plasma ignition element, in communication with the plasma chamber, ignites and sustains a high density inductively coupled plasma within the plasma chamber based upon ignition ions from the capacitive discharge. Due to the ignition ions, the inductively coupled plasma element can easily ignite the high density inductively coupled plasma, even at a low pressure.

Contamination Removal Apparatus and Method

A substrate dry cleaning apparatus, a substrate dry cleaning system, and a method of cleaning a substrate are disclosed. The substrate dry cleaning system includes a substrate support and a reactive species generator. The reactive species generator includes a first conduit defining a first flow channel that extends to an outlet of the first conduit, the Gullet of the first conduit facing the substrate support, a first electrode, a second electrode facing the first electrode, the first flow channel disposed between the first electrode and the second electrode, a first inert wall disposed between the first electrode and the first flow channel, and a second inert wall disposed between the second electrode and the first flow channel.

PASSIVE POWER DISTRIBUTION FOR MULTIPLE ELECTRODE INDUCTIVE PLASMA SOURCE

Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma. 1. A method for controlling a spatial distribution of plasma in a processing chamber that includes a primary inductor and N secondary inductors , comprising:exciting the plasma in the processing chamber with the primary inductor;inductively coupling the primary inductor to each of N secondary inductors through the plasma, wherein N is equal to or greater than one; andterminating each of the N secondary inductors such that substantially all current that passes through each of the N secondary inductors results from mutual inductance through the plasma with the primary inductor, the current through each of the N secondary inductors affecting the spatial distribution of the plasma.2. A system for controlling a spatial distribution of plasma in a processing chamber that includes a primary inductor and N secondary inductors , comprising:means for exciting the plasma in the processing chamber with the primary inductor;means for inductively coupling the primary inductor to each of N secondary inductors through the plasma, wherein N is equal to or greater than one; andmeans for terminating each of the N secondary inductors such that substantially all current that passes through each of the N secondary inductors results from mutual inductance ...

Showerhead insulator and etch chamber liner

The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.

PLASMA GENERATOR AND CLEANING/PURIFICATION APPARATUS USING SAME

A plasma generator includes: a liquid containing part containing water; a gas containing part; and a partition wall part that separates the liquid containing part and the gas containing part and is provided with a gas passage through which the gas in the gas containing part is led to the liquid containing part. The plasma generator is also provided with a first electrode arranged in the gas containing part and a second electrode arranged to be in contact with the liquid in the liquid containing part. The plasma generator is further provided with: a gas supply unit which supplies the gas to the gas containing part; a plasma power supply unit; and a projected part which serves as a drainage promotion part that prevents the liquid from remaining in the gas passage after the liquid in the liquid containing part is drained. 19-. (canceled)10. A plasma generator comprising:a liquid containing part configured to contain a liquid which includes water;a gas containing part configured to contain a gas;a partition wall part separating the liquid containing part and the gas containing part from each other and including a gas passage configured to lead the gas in the gas containing part to the liquid containing part;a first electrode arranged in the gas containing part;a second electrode arranged in contact with the liquid in the liquid containing part;a gas supply unit configured to supply the gas including oxygen to the gas containing part in a way that the gas in the gas containing part is transferred to the liquid containing part through the gas passage by pressure;a plasma power supply unit configured to turn the gas, which is transferred into the liquid in the liquid containing part by pressure, into plasma by causing electrical discharge between the first electrode and the second electrode through application of a predetermined voltage between the first electrode and the second electrode; anda drainage promotion part configured to prevent the liquid in the liquid ...

Processing apparatus

A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces.

Plasma baffle ring for a plasma processing apparatus and method of use

A plasma processing apparatus includes a baffle ring which separates an internal space of a vacuum chamber into a plasma space and an exhaust space. Plasma is generated in the plasma space by exciting a process gas using an energy source. The process gas is then exhausted out of the plasma space through the plasma baffle ring which surrounds an outer periphery of a substrate support. The plasma baffle ring comprises an inner support ring, an outer support ring, and vertically spaced apart circumferentially overlapping rectangular blades extending between the inner ring and the outer ring. Each blade has a major surface used to block a line of sight from the plasma space to the exhaust space, wherein the major surfaces of the blades are configured to capture nonvolatile by-products, such as plasma etch by-products, before the by-products evacuate the plasma space.

Phase And Frequency Control Of A Radio Frequency Generator From An External Source

Controlling a phase and/or a frequency of a RF generator. The RF generator includes a power source, a sensor, and a sensor signal processing unit. The sensor signal processing unit is coupled to the power source and to the sensor. The sensor signal processing unit controls the phase and/or the frequency of a RF generator.

Plasma processing apparatus and cleaning method for removing metal oxide film

In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

Baffle and method for treating surface of the baffle, and substrate treating apparatus and method for treating surface of the apparatus

Provided is a baffle. The baffle has holes for distributing a process gas excited in a plasma state. A surface of the baffle is treated by using a surface treating material containing an aromatic compound.

Cleaning method and plasma processing apparatus

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma. 1. A method of manufacturing a semiconductor device , comprising:accommodating a substrate in a process chamber;supplying a first gas containing oxygen into the process chamber;generating plasma in the process chamber by exciting the first gas;supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; andprocessing the substrate with oxidizing species generated by the plasma.2. The method of claim 1 , wherein in generating the plasma claim 1 , the plasma is generated so that the density distribution of the plasma in the process chamber is non-uniform in a plane direction of the substrate.3. The method of claim 1 , wherein in supplying the first gas claim 1 , the first gas is supplied to a first region in the process chamber claim 1 , andwherein in adjusting the hydrogen concentration distribution in the process chamber, the second gas is supplied to a second region which is a region above a processing surface of the substrate and is a region different from the first region in a plane direction of the substrate.4. The method of claim 1 , wherein in supplying the first gas claim 1 , the first gas is supplied to a plasma generation region where the plasma is generated claim 1 ,wherein in adjusting the hydrogen concentration distribution in the process chamber, the second gas is supplied to ...

SUBSTRATE PROCESSING APPARATUS, REFLECTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Described herein is a technique capable of improving a heating efficiency for a substrate to be heated by a heater. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel defining a process chamber; a process gas supplier configured to supply a process gas into the process vessel; an electromagnetic field generation electrode extending along an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface of the process vessel and configured to generate an electromagnetic field in the process vessel by being supplied with a high frequency power; a heater configured to radiate an infrared light to heat a substrate accommodated in the process chamber; and a reflector provided between the process vessel and the electromagnetic field generation electrode and configured to reflect the infrared light radiated from the heater. 1. A substrate processing apparatus comprising:a process vessel defining a process chamber;a process gas supplier configured to supply a process gas into the process vessel;an electromagnetic field generation electrode extending along an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface of the process vessel and configured to generate an electromagnetic field in the process vessel by being supplied with a high frequency power;a heater configured to radiate an infrared light to heat a substrate accommodated in the process chamber; anda reflector provided between the process vessel and the electromagnetic field generation electrode and configured to reflect the infrared light radiated from the heater.2. The substrate processing apparatus of claim 1 , wherein the heater comprises a susceptor heater provided in a susceptor configured to support the substrate in the process chamber.3. The substrate processing apparatus of claim 1 , wherein the heater comprises a lamp ...

METHOD OF DEPOSITING A FILM, RECORDING MEDIUM, AND FILM DEPOSITION APPARATUS

A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter. 1. A method of depositing a thin film on a substrate inside a vacuum chamber comprising:a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; anda second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.2. The method of depositing the thin film according to claim 1 ,wherein, in each of the first and second processes, a first process gas and a second process gas that produces a reaction product on the substrate by reacting with the first process gas are alternately supplied onto the substrate,wherein at least one of the first and second process gases is supplied as the plasma, which is obtained by changing the first or second process gas.3. The method of depositing the thin film according to claim ...

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil. 1. A plasma processing method comprising: a chamber;', 'a lower electrode disposed in the chamber;', 'an upper electrode disposed in the chamber and facing the lower electrode;', 'a focus ring disposed in the chamber and surrounding a peripheral edge of the lower electrode; and', 'an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode;, 'preparing a plasma processing apparatus, the plasma processing apparatus comprisingplacing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring;introducing process gas into the chamber;applying high-frequency power across the upper electrode and the lower electrode to generate plasma of the process gas; andgenerating a magnetic field by supplying a current to the annular coil to level an interface of a plasma sheath on an upper portion of the substrate with the interface of the plasma sheath on an upper portion of the focus ring.2. The plasma processing method according to claim 1 ,wherein the leveling of the interface of the plasma sheath reduces the ...

SHOWERHEAD HAVING A DETACHABLE HIGH RESISTIVITY GAS DISTRIBUTION PLATE

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate. 1. A showerhead for use in a semiconductor processing chamber , comprising:a base having a first side and a second side opposing the first side;a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; anda thermal gasket disposed in a gap between the base and gas distribution plate.2. The showerhead of claim 1 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the base and the gas distribution plate.3. The showerhead of claim 1 , further comprising:an yttrium fluoride coating on the second side of the base.4. The showerhead of claim 1 , further comprising:one or more pins pressed into the second side of the base and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the base.5. The showerhead of claim 4 , wherein each of the one or more pins includes a through-hole to allow a volume behind each pin to be evacuated.6. The showerhead of claim 1 , wherein the base comprises a plurality of through holes extending from the first side to the second ...

CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates. 1. A gas distribution assembly , comprising: an inner annular wall located at an inner diameter, an outer annular wall located at an outer diameter, an upper surface, and a lower surface;', 'an upper recess formed in the upper surface;', 'a lower recess formed in the lower surface;', 'a first fluid channel defined in the lower surface that is located in the annular body radially inward of the lower recess;, 'an annular body comprisingan upper plate coupled with the annular body at the upper recess, wherein the upper plate defines a plurality of first apertures; and a plurality of second apertures defined therein, wherein the second apertures align with the first apertures defined in the upper plate;', 'a plurality of third apertures defined therein and located between the second apertures;, 'a lower plate coupled with the annular body at the lower recess, and covering the first fluid channel, the lower plate comprisingwherein the upper and lower plates are coupled with one another such that the first and second apertures are aligned to form a channel through the upper and lower plates.2. The gas distribution assembly of claim 1 , further comprising a second fluid channel defined in the lower surface that is located in the annular body radially outward of the first fluid channel claim 1 , wherein a plurality of ports are defined in a portion of the annular body defining an outer wall of the first fluid channel and an inner wall of the second fluid channel claim 1 , wherein the plurality of ports are ...

PLASMA SOURCE

The invention relates to a plasma source () for depositing a coating onto a substrate (), which is connectable to a power source (P) and includes: an electrode (); a magnetic assembly () located circumferentially relative to said electrode and including a set of magnets mutually connected by a magnetic bracket () including a first and second central magnet () and at least one head magnet (); and an electrically insulating enclosure () arranged such as to surround the electrode and the magnets. 119. A plasma source () intended for the depositing of a coating on a substrate () and able to be connected to a power source (P) , comprising:{'b': 2', '3', '6', '21', '22', '23', '24', '26', '27', '28, 'a) an electrode () delimiting a discharge cavity () leading onto an aperture () opposite which the said substrate can be positioned, the cross-section of the said electrode comprising a first and a second side wall (, ) positioned either side of a bottom part (, ) provided with a central portion protruding into the said discharge cavity, the said central portion comprising a first and a second central wall (, ) and a top part () joining together the two central walls;'}{'b': 4', '46, 'claim-text': [{'b': 41', '42', '21', '22', '6, 'i) at least a first and a second side magnet (, ), the said first side magnet, respectively second side magnet, being arranged behind the said first side wall () and second side wall () respectively, in the vicinity of the said aperture (), the said side magnets being oriented such that their exposed poles have the same polarity;'}, {'b': 43', '44', '26', '27, 'ii) at least a first and a second central magnet (, ), the said first central magnet, and second central magnet respectively, being arranged behind the said first central wall () and second central wall () respectively, the said two central magnets being oriented such that their exposed pole is of opposite polarity to that of the exposed poles of the side magnets;'}, {'b': 45', '28, 'iii) at ...

METHODS OF REMOVING RESIDUAL POLYMERS FORMED DURING A BORON-DOPED AMORPHOUS CARBON LAYER ETCH PROCESS

Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N), oxygen (O), hydrogen (H), and methane (CH). 1. A method of etching a feature in a substrate , comprising:exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and{'sub': 2', '2', '2', '4, 'exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N), oxygen (O), hydrogen (H), and methane (CH).'}2. The method of claim 1 , wherein the first process gas comprises one of a fluorine-containing gas or a chlorine-containing gas.3. The method of claim 1 , wherein the second plasma forms hydroxylamine (NHOH) to react with the residual polymers proximate the bottom of the feature.4. The method of claim 1 , further comprising forming the first plasma by igniting the first process gas using an RF power source.5. The ...

METHOD FOR OPERATION INSTABILITY DETECTION IN A SURFACE WAVE PLASMA SOURCE

Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor. 1. A system for plasma processing comprising:a surface wave plasma source configured to generate a plasma field;an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source; anda sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.2. The system of wherein the surface wave plasma source further comprises a plasma distribution plate having a plurality of regions of non-uniformity on a surface of the plasma distribution plate.3. The system of wherein the plurality of regions of non-uniformity comprise dimples formed in a surface of the plasma distribution plate.4. The system of further comprising an optical fiber disposed in a region proximate a dimple formed in the surface of the plasma distribution plate.5. The system of wherein the optical fiber is configured to collect the optical energy from plasma generated in the region proximate to the dimple formed in the surface plasma distribution plate.6. The system of wherein the optical sensor comprises a light sensitive diode disposed proximate to the optical fiber.7. The system of further comprising a plurality of optical fibers claim 4 , each optical fiber disposed in a region proximate one of a plurality ...

ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER HIGH SURFACE BINDING ENERGY MATERIALS

Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas. 1. A method of etching a refractory metal or other high surface binding energy (high E) material on a substrate , the method comprising:{'sub': 'O', 'providing a substrate comprising an exposed refractory metal/high Esurface;'}{'sub': O', 'O, 'exposing the refractory metal/high Esurface to a modification gas to modify the surface and form a modified refractory metal/high Esurface; and'}{'sub': O', 'O', 'O, 'exposing the modified refractory metal/high Esurface to an energetic particle to preferentially remove the modified refractory metal/high Esurface relative to an underlying unmodified refractory metal/high Esurface;'}{'sub': O', 'O, 'wherein the exposed refractory metal/high Esurface after removing the modified refractory metal/high Esurface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.'}2. The method of claim 1 , wherein the smoothness of the refractory metal/high Esurface is maintained.3. The method of claim 1 , wherein the smoothness of the refractory metal/high Esurface is increased.4. The method of claim 3 , wherein the smoothness ...

APPARATUS AND METHOD FOR TREATING SUBSTRATE

An apparatus for treating a substrate includes a chamber having a treatment space therein, a support unit that supports the substrate in the treatment space, a gas supply unit that supplies, into the treatment space, a process gas used to treat the substrate, a plasma source that generates plasma by exciting the process gas supplied into the treatment space, heaters that heat the support unit for different regions of the substrate, a heater power supply that applies powers to the heaters, a plurality of heater cables that deliver the powers to the heaters, and variable capacitors configured be grounded, the variable capacitors being connected to the plurality of heater cables, respectively. 1. An apparatus for treating a substrate , the apparatus comprising:a chamber having a treatment space therein;a support unit configured to support the substrate in the treatment space;a gas supply unit configured to supply, into the treatment space, a process gas used to treat the substrate;a plasma source configured to generate plasma by exciting the process gas supplied into the treatment space;heaters configured to heat the support unit for different regions of the substrate;a heater power supply configured to apply powers to the heaters;a plurality of heater cables configured to deliver the powers to the heaters; andvariable capacitors configured to be grounded, the variable capacitors being connected to the plurality of heater cables, respectively.2. The apparatus of claim 1 , further comprising:a filter configured to pass the powers through the plurality of heater cables and interrupt introduction of RF power into the heater power supply,wherein the plurality of heater cables are connected between the filter and the heaters.3. The apparatus of claim 2 , wherein the variable capacitors configured to be grounded are connected to input terminals of the filter.4. The apparatus of claim 3 , wherein the filter includes a plurality of terminals claim 3 , andwherein the variable ...

SPATIAL MONITORING AND CONTROL OF PLASMA PROCESSING ENVIRONMENTS

Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes. 117-. (canceled)18. A system for plasma processing , the system comprising:a plasma processing chamber;one or more excitation sources to provide a plasma in the processing chamber;at least two separate electrical planes arranged within the plasma processing chamber to enable control of plasma sheaths proximate to the at least two separate electrical planes; anda chuck disposed to support a substrate;at least one bias supply coupled to the at least two separate electrical planes, the at least one bias supply is configured to periodically apply a cycle of an asymmetric periodic voltage waveform to each of the electrical planes, and obtain at least one ion current measurement, wherein the at least one ion current measurement is an indication of ion current proximate to a corresponding one of the separate electrical planes; and', 'control at least one electrical or mechanical feature of the plasma processing chamber based upon the at least one ion current measurement., 'at least one controller configured to19. The system of wherein the controller is configured to control the one or more excitation sources based upon the at least one ion current measurement to control plasma density proximate to the corresponding one of the separate electrical planes.20. The system of wherein the controller is configured to control claim 18 , in response to at least one ...

INTERNAL SPLIT FARADAY SHIELD FOR AN INDUCTIVELY COUPLED PLASMA SOURCE

An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber. 117-. (canceled)18. A method of operating an inductively coupled plasma source including a plasma chamber comprising:providing radio frequency energy into the plasma chamber from at least one conductive coil to maintain a plasma in the plasma chamber;providing a conductive shield to reduce capacitative coupling between the source of the radio frequency and the plasma;maintaining the plasma and the conductive shield at electrical potentials different from ground potential;extracting charged particles from the plasma chamber; andfocusing the charged particles into a beam and directing the beam onto or near a workpiece outside of the plasma chamber.19. The method of further comprising providing a cooling fluid to cool the plasma chamber.20. The method of in which providing a conductive shield includes providing a conductive shield coated onto the interior wall of the plasma chamber.21. The method of in which providing a conductive shield includes providing a conductive material inserted into the interior of the plasma chamber.22. The method of in which maintaining the plasma and the conductive shield at electrical potentials different from ground potential includes maintaining the plasma at a high voltage.23. The method of in which the conductive shield is not liquid cooled.24. The method of in which there is no metal sputter target for physical vapor deposition in the plasma chamber.25. The method of in which providing radio frequency energy to maintain a plasma in the plasma chamber includes maintaining a plasma lacking metal ions.26. ...

MICROPLASMA JET DEVICES, ARRAYS, MEDICAL DEVICES AND METHODS

Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes. 1. A microplasma jet device comprising:a monolithic polymer;one or more elongated microcavities within said monolithic polymer, said elongated microcavities extending entirely through said monolithic polymer and being dimensioned to accept gas flow therethrough;electrodes buried within said monolithic polymer, disposed proximate to said elongated cavities such that said electrodes can generate and sustain plasma within said elongated cavities, but isolated from said elongated cavities by portions of said monolithic;a gas supply to direct gas flow through said elongated cavities; anda power supply to power said electrodes to generate plasma within said elongated cavities.2. The device of claim 1 , comprising an array of said elongated cavities.3. The device of claim 1 , wherein said gas supply supplies a low molecular weight atomic species.4. The device of claim 3 , wherein the low molecular weight atomic species comprises Helium claim 3 , Neon or Argon.5. The device of claim 1 , wherein said one or more elongated microcavities has a length to diameter ratio of at least 10:1.6. The device of claim 1 , wherein said electrodes comprise one of foils claim 1 , rods wires or metal layers.7 ...

SYSTEM AND METHOD FOR CLEANING SURFACE OF SUBSTRATE USING ROLL-TO-ROLL PLASMA GENERATING DEVICE

A roll-to-roll surface cleaning treatment system may include an upper housing containing a first plasma generating device and a first transfer roller that faces a nozzle from which a plasma beam generated by the first plasma generating device is discharged and that winds and transfers a flexible substrate, the upper housing comprising a gas inlet, an entrance through which the flexible substrate is introduced, and an outlet through which the flexible substrate is discharged, and a lower housing connected to the entrance of the upper housing and containing a second plasma generating device and a second transfer roller that faces a nozzle from which a plasma beam generated by the second plasma generating device is discharged and that winds and transfers the flexible substrate, the lower housing comprising a gas outlet, and an inlet through which the flexible substrate is introduced. 1. A roll-to-roll plasma surface cleaning treatment system , comprising:an upper housing containing a first plasma generating device and a first transfer roller that faces a nozzle from which a plasma beam generated by the first plasma generating device is discharged and that winds and transfers a flexible substrate, the upper housing comprising a gas inlet, an entrance through which the flexible substrate is introduced, and an outlet through which the flexible substrate is discharged; anda lower housing connected to the entrance of the upper housing and containing a second plasma generating device and a second transfer roller that faces a nozzle from which a plasma beam generated by the second plasma generating device is discharged and that winds and transfers the flexible substrate, the lower housing comprising a gas outlet, and an inlet through which the flexible substrate is introduced,wherein the system is configured to maintain the upper housing at a low-temperature atmosphere by introducing a low-temperature refrigerant gas through the gas inlet.2. The system according to claim 1 , ...

PLASMA GENERATING DEVICE

A plasma generating device includes a plasma sprinkler head and an outer housing, wherein the plasma sprinkler head includes a case and a plasma generating assembly disposed on the case and having a plasma nozzle. The plasma nozzle is located on a side of the case. The outer housing is disposed on the case and is located around the plasma nozzle. In this way, when the plasma nozzle sprays the plasma, the plasma generating device of the present invention could effectively avoid introducing too much external air to affect a quality of the plasma. 1. A plasma generating device , comprising:a plasma sprinkler head comprising a case and a plasma generating assembly, wherein the plasma generating assembly is disposed on the case and has a plasma nozzle located on a side of the case; andan outer housing disposed on the case and located around the plasma nozzle.2. The plasma generating device as claimed in claim 1 , wherein the outer housing has an open end; at least a part of the plasma nozzle is located between the open end and the case.3. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port located between the open end and the case.4. The plasma generating device as claimed in claim 2 , wherein the plasma nozzle has an output port protruding out of the open end.5. The plasma generating device as claimed in claim 2 , wherein the outer housing has a surrounding wall surrounding around the plasma nozzle and having the open end; the surrounding wall has at least one vent located between the open end and the case.6. The plasma generating device as claimed in claim 1 , wherein the outer housing is movably disposed on the case.7. The plasma generating device as claimed in claim 6 , further comprising at least one engaging members claim 6 , wherein the case has at least one engaging hole adapted to be engaged with at least one engaging member; the outer housing has at least one displacement adjusting structure having a plurality of ...

LAYER-FORMING DEVICE AND INJECTOR

A layer-forming device includes a feeding mechanism that feeds a substrate during layer formation, an injector unit having a plurality of injectors that supplies a layer-forming gas to the substrate, along a feeding passage of the substrate, and a reactant supply unit which generates a reactant. The injector unit supplies the reactant through gaps between the injectors to a layer of the layer-forming component. A substrate opposing surface of the injector includes a layer-forming gas supply slot through which the layer-forming gas is output, first gas exhaust slots that suck an excess gas such as the layer-forming gas, the first gas exhaust slots being provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and inert gas supply slots that supply an inert gas provided on far sides of the respective first gas exhaust slots away from the layer-forming gas supply slot. 1. A layer-forming device that forms a thin layer on a substrate in atomic layer unit , the layer-forming device comprising:a feeding mechanism configured to feed the substrate during layer formation of the substrate;an injector unit including a plurality of injectors provided along a feeding passage of the substrate with gaps, and configured to supply a layer-forming gas toward the substrate to form, on the substrate being fed, a layer of a layer-forming component of the layer-forming gas; anda reactant supply unit configured to supply a reactant that reacts with the layer-forming component toward the substrate through the gaps,a substrate opposing surface of each of the injectors, the surface facing the substrate, includes a layer-forming gas supply slot configured to output the layer-forming gas, first gas exhaust slots provided on both sides of the layer-forming gas supply slot in a feeding direction of the substrate, and configured to suck an excess gas above the substrate, and inert gas supply slots provided on far sides of the respective first gas ...

FILM THICKNESS UNIFORMITY IMPROVEMENT USING EDGE RING AND BIAS ELECTRODE GEOMETRY

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring. 1. An apparatus for substrate processing comprising: a bottom surface;', 'an upper surface; and', 'a groove disposed in the upper surface;, 'an edge ring, comprising a first portion extending from the groove; and', 'a second portion connected to the first portion and extending radially inward., 'an overhang ring disposed in the groove, the overhang ring further comprising2. The apparatus of claim 1 , wherein the edge ring comprises a quartz material.3. The apparatus of claim 1 , wherein the overhang ring comprises a quartz material.4. The apparatus of claim 1 , wherein the edge ring further comprises a plurality of tabs disposed on the upper surface.5. The apparatus of claim 4 , wherein the plurality of tabs comprises 3 to 10 tabs.6. The apparatus of claim 4 , wherein the plurality of tabs are disposed radially inward of the groove.7. The apparatus of claim 4 , wherein the second portion of the overhang ring extends radially inward of an outer surface of the plurality of tabs.8. The apparatus of claim 1 , wherein the edge ring further comprises an outer ledge claim 1 , the outer ledge extending from the bottom surface of the edge ring.9. The apparatus of claim 1 , wherein the second portion of the overhang ring is perpendicular to the first portion of the overhang ring.10. The apparatus of claim 1 , wherein the overhang ring has an inner radius less than the inner radius of the edge ring.11. The apparatus of claim 1 , wherein the groove of the edge ring has sidewalls sized to accept the first portion of the overhang ring.12. An apparatus for substrate processing comprising: a bottom surface;', 'an upper surface;', 'a central opening; and', 'a groove ...

METHODS AND SYSTEMS TO MODULATE FILM STRESS

Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources. 1. A method comprising:powering a first power source connected to a first plasma gas port in a first process region of a processing chamber, the first power source coupled to a first match circuit;powering a second power source connected to a second plasma gas port in a second process region different from the first process region of the processing chamber; the second power source coupled to a second match circuit; andcontrolling a phase of one or more of the first power source or the second power source using a master exciter connected to the first power source, the second power source, the first match circuit and the second match circuit.2. The method of claim 1 , wherein the master exciter monitors feedback from the first match circuit and the second match circuit and adjusts the phase of one or more of the first power source or the second power source based on the feedback to maintain the phase of the first power source and the second power source to be within a range of about 170° to about 190° apart.3. The method of claim 1 , wherein the first plasma gas port and the second plasma gas port are positioned on opposite sides of a central axis of a processing chamber.4. The method of claim 1 , wherein the master exciter includes a feedback circuit to monitor the first match circuit and the second match circuit and control the first power source and the second power source to adjust the phase of the one or more of the first power source and the second power source.5. The method of claim 1 , further comprising:powering a third power source connected to a third plasma gas port in a third process region of the processing chamber, the third process region different from the first process region and ...

MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING APPARATUS

A device includes a microwave generator configured to generate a microwave having a bandwidth, an output unit, a directional coupler and a measurer. The microwave generator generates a microwave a power of which is pulse-modulated to be a High level and a Low level. A set carrier pitch is set to satisfy a preset condition. The preset condition includes a condition that a value obtained by dividing a set pulse frequency by the set carrier pitch or a value obtained by dividing the set carrier pitch by the set pulse frequency is not an integer and a condition that an ON-time of the High level is equal to or larger than 50%. The microwave generator averages a first High measurement value and a first Low measurement value in a preset moving average time longer than a sum of the ON-time of the High level at a preset sampling interval. 1. A microwave output device , comprising:a microwave generator configured to generate a microwave having a median frequency, a bandwidth and a carrier pitch respectively corresponding to a set frequency, a set bandwidth and a set carrier pitch instructed from a control device, a power of the microwave being pulse-modulated such that a pulse frequency, a duty ratio, a High level and a Low level become a set pulse frequency, a set duty ratio, a set power of High level and a set power of Low level instructed from the control device;an output unit configured to output the microwave propagated from the microwave generator;a first directional coupler configured to output a part of a progressive wave propagated from the microwave generator to the output unit; anda measurer configured to determine a first High measurement value and a first Low measurement value respectively indicating a High level and a Low level of a power of the progressive wave in the output unit, based on the part of the progressive wave outputted from the first directional coupler,wherein a reciprocal of the set carrier pitch becomes a longest cycle among power variation ...

ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL

A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface. 1. A processing chamber for etching a substrate , comprising:a chamber body having a substrate support disposed on a cathode;an electrode disposed in the cathode and having a diameter greater than the substrate support;a focus ring disposed on an upper surface of the substrate support, the focus ring comprising a material selected from the group consisting of monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, and combinations thereof; anda quartz ring disposed on the upper surface of the substrate support, circumscribing the focus ring,wherein the focus ring has a flat lower surface and a notch formed in the flat lower surface.2. The chamber of claim 1 , wherein the focus ring has an internal wall at an inner diameter claim 1 , a first surface extending from the inner wall claim 1 , a step rising from the first surface claim 1 , and a second surface extending from the step claim 1 , wherein the second surface has horizontal dimension less than about 0.15 inches.3. The chamber of claim 2 , wherein the second surface has a horizontal dimension between about 0.08 inches and about 0.14 inches.4. The chamber of claim 2 , wherein the focus ring has a bevel extending from the second surface that forms an angle with the second surface of ...

PLASMA PROCESSING METHOD

A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a RF antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.

GAS COOLED PLASMA SPRAYING DEVICE

A plasma spraying device may include a first electrode and a second electrode. The first electrode may define an ionizing gas channel and at least one cooling channel. A distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying spray gun proximate to a distal end of the first electrode. The second electrode is at least partially disposed in the ionizing gas channel. 1. A plasma spraying device comprising: an ionizing gas channel; and', 'at least one cooling gas channel, wherein a distal end of the at least one cooling gas channel opens to an exterior of the plasma spraying device proximate to a distal end of the first electrode; and, 'a first electrode defininga second electrode disposed in the ionizing gas channel.2. The plasma spraying device of claim 1 , wherein the first electrode comprises copper.3. The plasma spraying device of claim 1 , wherein the ionizing gas channel exits the first electrode at an ionizing gas channel exit portion claim 1 , wherein the ionizing gas channel exit portion defines an ionizing gas channel exit portion axis claim 1 , wherein the first electrode defines a major axis claim 1 , and wherein an angle between the ionizing gas channel exit portion axis and the major axis is between about 20 degrees and about 90 degrees.4. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel comprises a plurality of cooling gas channels claim 1 , and wherein each of the plurality of cooling gas channels includes a distal end open to an exterior of the plasma spraying device.5. The plasma spraying device of claim 1 , wherein the at least one cooling gas channel defines a cooling gas channel axis claim 1 , and wherein the cooling gas channel axis is substantially parallel to the major axis.6. The plasma spraying device of claim 1 , further comprising a material injection channel coupled to an external surface of the device.7. The plasma spraying device of claim 1 , wherein the ionizing ...

System and Method for Protection of Vacuum Seals in Plasma Processing Systems

Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal. 1. A plasma processing system , comprising:a vacuum chamber defining a sidewall;a vacuum seal coupling the sidewall of the vacuum chamber to a heat sink; anda thermally conductive bridge coupled between the sidewall and the heat sink;wherein the thermally conductive bridge is positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from a heat source to the heat sink so that the heat path bypasses the vacuum seal.2. The plasma processing system of claim 1 , wherein the bridge is flexible and conformable to the shape of the vacuum seal and vacuum chamber.3. The plasma processing system of claim 2 , wherein the bridge is elastic so that a contact to the heat source and to the heat sink can be made by compressing the bridge in at least one direction.4. The plasma processing system of claim 3 , wherein the bridge comprises a first component for making contact with the heat source and a second component for making contact with the heat sink.5. The plasma processing system of claim 1 , wherein the bridge comprises a heat conducting component and elastic component coupled to the heat conducting component.6. The plasma processing system of claim 1 , wherein the heat path conducts through at least a portion of the sidewall.7. The plasma processing system of ...

APPARATUS AND METHOD FOR EFFICIENT MATERIALS USE DURING SUBSTRATE PROCESSING

A processing apparatus may include a plasma chamber to house a plasma; and an extraction assembly disposed along a side of the plasma chamber. The extraction assembly may be configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate; and wherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species. 1. A processing apparatus comprising:a plasma chamber to house a plasma; andan extraction assembly disposed along a side of the plasma chamber, the extraction assembly configured to direct ions from the plasma to a substrate, wherein the ions generate etched species comprising material that is etched from the substrate, andwherein the extraction assembly comprises at least one component having a recess that faces the substrate and is configured to intercept and retain the etched species.2. The processing apparatus of claim 1 , wherein the extraction assembly comprises an extraction plate having a grooved outer surface that faces the substrate.3. The processing apparatus of claim 1 , wherein the extraction assembly comprises an extraction plate having an extraction aperture and a beam blocker disposed within the plasma chamber and having at least one recess that faces the substrate through the extraction aperture.4. The processing apparatus of claim 3 , wherein the beam blocker and extraction aperture are interoperative to generate a plurality of menisci in a plasma sheath boundary of the plasma claim 3 , wherein a plurality of ion beams are extracted from the plurality of menisci and directed to the substrate claim 3 , wherein the etched species are generated as a plurality of sputter plumes over a range of sputter angles claim 3 , and wherein the at least one recess is tailored according to the range of sputter angles of the plurality of sputter plumes.5. The processing ...

Substrate Processing Device and Method of Handling Particles Thereof

Provided are a substrate processing device and a method of handing particles thereof. The substrate processing device includes: a process chamber providing a space in which a substrate is processed; a substrate support unit arranged in the process chamber and supporting the substrate; a plasma chamber providing a space in which plasma is generated; a gas supply unit supplying a process gas to the plasma chamber; a plasma source installed in the plasma chamber, wherein the plasma source generates the plasma from the process gas; a radio frequency (RF) power supply providing the plasma source with an RF signal for generating the plasma; a baffle arranged on the substrate support unit, wherein the baffle evenly supplies the plasma to a processing space in the process chamber; a direct current (DC) power supply applying a DC voltage to the baffle; a discharge unit discharging a particle generated in the process chamber by substrate processing; and a control unit controlling the DC power supply and handing the particle to prevent the contamination of the substrate by the particle.

COLLAR, CONICAL SHOWERHEADS AND/OR TOP PLATES FOR REDUCING RECIRCULATION IN A SUBSTRATE PROCESSING SYSTEM

A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction. A conical surface is arranged adjacent to the cylindrical base and around the stem portion of the showerhead. An inverted conical surface is arranged adjacent to a top surface and sidewalls of the processing chamber. The conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber. 1. A substrate processing system comprising:a processing chamber;a showerhead including a faceplate, a stem portion and a cylindrical base portion;a collar connecting the showerhead to a top surface of the processing chamber,wherein the collar defines a gas channel to receive secondary purge gas and a plurality of gas slits to direct the secondary purge gas from the gas channel in a radially outward and downward direction;a conical surface arranged adjacent to the cylindrical base and around the stem portion of the showerhead; andan inverted conical surface arranged adjacent to a top surface and sidewalls of the processing chamber,wherein the conical surface and the inverted conical surface define an angled gas channel from the plurality of gas slits to a gap defined between a radially outer portion of the cylindrical base portion and the sidewalls of the processing chamber.2. The substrate processing system of claim 1 , wherein the gas channel defines a flow path that has a constant width and that is parallel to a direction of the secondary purge gas flowing from the plurality of gas slits.3. The substrate ...

Plasma Monitoring Device

A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value. 1. A plasma monitoring device for a reaction chamber having a reaction space in which plasma is formed , the monitoring device comprising:a fixing unit configured to be coupled to a side wall of the reaction chamber so as to abut an observation window provided in the side wall;a plasma measuring unit in contact with a rear end of the fixing unit and configured to measure a luminous intensity of light emitted by the plasma within the reaction chamber via the observation window and to output a luminous intensity measurement value;a reference light source unit configured to irradiate reference light having a uniform luminous intensity to the plasma measuring unit at a predetermined interval of time; anda control unit configured to:receive the luminous intensity measurement value and to calculate a luminous intensity value of the emitted light;control a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light;compare the luminous intensity of the reference light with a previously ...

DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel. 1. A doping method for doping by injecting a dopant into a processing target substrate , the doping method comprising:a plasma doping processing step including setting a value of bias electric power supplied during a plasma doping processing to a predetermined value on premise of a washing processing to be performed after a plasma doping, and generating plasma within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate held on a holding pedestal in the processing vessel.2. The doping method of claim 1 , wherein claim 1 , in the plasma doping processing step claim 1 , the value of the bias electric power is set such that a dopant concentration of a top portion of the processing target substrate and a dopant concentration of a side portion of the processing target substrate are substantially equal to each other when the washing processing is performed after the plasma doping processing.3. A doping apparatus comprising:a processing vessel;a gas supply unit configured to supply a doping gas and an inert gas for plasma excitation to the processing vessel;a holding pedestal disposed within the processing vessel and configured to hold a processing target substrate thereon;a plasma generation mechanism configured to generate plasma within the processing vessel using microwaves; anda controller configured to set a value of bias electric power to a predetermined value on premise of a washing processing to be ...

Plasma Processing Apparatus and Plasma Processing Method

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

ICP SOURCE FOR M AND W-SHAPE DISCHARGE PROFILE CONTROL

Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile. 1. A plasma processing apparatus , comprising:a chamber lid and a chamber body enclosing a processing region;an inner coil disposed above the processing region;an outer coil disposed about the processing region and the inner coil;an adjustable middle coil between the inner coil and the outer coil wherein the adjustable middle coil has a resonance frequency at one set of input parameters and is replaceable with a different middle coil that has a different resonant frequency at the one set of input parameters;an impedance match circuit coupled to the inner coil and the outer coil; andan Rf generator coupled to the impedance match circuit.2. The plasma processing apparatus of wherein the adjustable middle coil is coupled to a capacitor to adjust resonant frequency of the adjustable middle coil.3. The plasma processing apparatus of wherein the adjustable middle coil is at least one wind of conductive material.4. The plasma processing apparatus of wherein the adjustable middle coil is coupled to an adjustable capacitor to adjust resonant frequency of the adjustable middle coil.5. The plasma processing apparatus of wherein a diameter of the adjustable middle coil is adjustable with respect to a diameter of the inner coil and a diameter of the outer coil.6. The plasma processing apparatus of wherein distance of the adjustable middle coil from the chamber lid is adjustable.7. (canceled)8. A ...

Adaptive Periodic Waveform Controller

A repeating setpoint generator module selectively varies a setpoint for an output parameter according to a predetermined pattern that repeats during successive time intervals. A closed-loop module, during a first one of the time intervals, generates N closed-loop values based on N differences between (i) N values of the setpoint at N times during the first one of the time intervals and (ii) N measurements of the output parameter at the N times during the first one of the time intervals, respectively. An adjusting module, during the first one of the time intervals, generates N adjustment values based on N differences between (i) N values of the setpoint at the N times during a second one of the time intervals and (ii) N measurements of the output parameter at the N times during the second one of the time intervals, respectively. 1a setpoint generator module configured to selectively vary a setpoint for an output parameter during successive time intervals;a closed-loop module configured to, during a first time interval, generate a closed-loop signal based on a selected one of a setpoint or a measurement of the output parameter during the first time interval;an adjusting module configured to, during the first time interval, generate an adjustment signal based on the selected one of the setpoint during a prior time interval or the output parameter during the prior time interval; anda power amplifier configured to apply an output to a load in accordance with the closed-loop signal and the adjustment signal.. A power output generation system, comprising: This application is a continuation of U.S. Continuation application Ser. No. 16/273,595, filed on Feb. 12, 2019, which is a continuation of U.S. Divisional application Ser. No. 16/005,761, filed on Jun. 12, 2018, which claims the benefit of U.S. application Ser. No. 14/953,917, filed on Nov. 30, 2015, which claims the benefit of U.S. Provisional Application No. 62/087,290, filed on Dec. 4, 2014. The entire disclosures of ...

PLASMA DEVICE USING COAXIAL WAVEGUIDE, AND SUBSTRATE TREATMENT METHOD

Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap. 1. A plasma device , comprising:a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts;a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap; anda conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.2. The plasma device according to claim 1 , whereinthe coaxial waveguide has a microwave introduction part and a plurality of end parts, the plurality of end parts being obtained by branching at the plurality of branch parts; andthe stub is provided at a first branch part, the first branch part being a branch part nearest to the microwave introduction part among the plurality of branch parts.3. The plasma device ...

Plasma Spreading Apparatus And System

A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching. 1. A plasma etching process chamber , said plasma etching process chamber comprising:a plasma source, said plasma source comprising a first end and a second end, said first end comprising a gas input portion, said plasma source coupled to a process chamber at a second end;a process chamber;a constricting plate adapted to constrict the flow of plasma from said plasma source, said constricting plate at said second end of said plasma source, said constricting plate comprising an annulus;a spreading disc, said spreading disc adapted to spread the flow of plasma after the plasma has flowed through said constricting plate, said spreading disc disposed between said constricting plate and the substrate support, said spreading disc centered below said annulus of said constricting plate;a substrate support, said support adapted to support a substrate in the spread plasma flow, said substrate support residing within said process chamber, said substrate support centered below said spreading disc; anda vacuum system, said vacuum system adapted to evacuate said process chamber.2. The plasma etching process chamber of wherein said plasma source is a linear-inductive plasma source.3. The plasma etching process chamber of wherein said plasma source has a cylindrical plasma chamber.4. The plasma etching process chamber ...

PLASMA PROCESSING APPARATUS AND METHOD FOR RELEASING SAMPLE

The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears. 1. A method for releasing a sample from a sample stage , in which the sample electrostatically adsorbed to the sample stage is subjected to a plasma processing and then released from the sample stage after the plasma processing , comprising:changing a DC voltage applied to an electrode for the electrostatic adsorption from a predetermined value to almost 0 V after a predetermined time elapses since supplying of a radio frequency power to generate plasma is stopped,wherein the predetermined time is a time defined on the basis of a time when charged particles generated by the plasma after the sample is subjected to the plasma processing disappear or a time when an afterglow discharge disappears, andwherein the predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V.2. The method for releasing the sample according to claim 1 ,wherein, in a case where the number of electrodes is two, the DC voltage is applied to each of the electrodes such that an average value of a DC voltage applied to one electrode and a DC voltage applied to the other electrode becomes the predetermined value.3. ...

MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING DEVICE

A device includes a microwave generation unit that averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged first measured value comes close to the setting power, and in which the predetermined movement average time is 60 μs or less, and a relationship of y≥78.178xis satisfied when the predetermined sampling interval is indicated by x, and the predetermined movement average time is indicated by y. 1. A microwave output device comprising:a microwave generation unit configured to generate a microwave having a center frequency, power, and a bandwidth respectively corresponding to a setting frequency, setting power, and a setting bandwidth for which instructions are given from a controller;an output portion configured to output the microwave propagating from the microwave generation unit;a first directional coupler configured to output parts of travelling waves propagating toward the output portion from the microwave generation unit;a second directional coupler configured to output parts of reflected waves returning to the output portion; anda measurement unit configured to determine first measured values indicating power levels of the travelling waves in the output portion on the basis of the parts of the travelling waves output from the first directional coupler, and determine second measured values indicating power levels of the reflected waves in the output portion on the basis of the parts of the reflected waves output from the second directional coupler,wherein the microwave generation unit averages the first measured values and the second measured values at a predetermined movement average time and a predetermined sampling interval, and controls the microwave such that a value obtained by subtracting the averaged second measured value from the averaged ...

PLASMA GENERATING APPARATUS USING DUAL PLASMA SOURCE AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME

Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.

Method for Activating an Inner Surface of a Substrate Tube for the Manufacturing of an Optical-Fiber Preform

A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point. 1. A method for activating an inner surface of a substrate tube for the manufacturing of an optical-fiber preform by means of plasma etching with a fluorine-containing etching gas , the plasma etching comprising the steps of:supplying a supply flow of gas to a central cavity of a substrate tube, wherein the supply flow comprises a main gas flow and a fluorine-containing etching gas flow;inducing a plasma by means of electromagnetic radiation in at least a part of the substrate tube to create a plasma zone in the central cavity of the substrate tube; andmoving the plasma zone back and forth in longitudinal direction over the length of the substrate tube between a reversal point located near the supply side and a reversal point located near the discharge side of the substrate tube;wherein the flow of the fluorine-containing etching gas is provided only when the plasma zone is present between the reversal point near the supply side and a pre-determined axial position located between the reversal point near the supply side and the reversal point near the discharge side.2. The method according to claim 1 , wherein the pre-determined axial position located between the reversal point near the supply side and the ...

VARIABLE SHOWERHEAD FLOW BY VARYING INTERNAL BAFFLE CONDUCTANCE

Apparatuses and techniques for providing for variable radial flow conductance within a semiconductor processing showerhead are provided. In some cases, the radial flow conductance may be varied dynamically during use. In some cases, the radial flow conductance may be fixed but may vary as a function of radial distance from the showerhead centerline. Both single plenum and dual plenum showerheads are discussed. 1. (canceled)2. An apparatus comprising:an outer wall, the outer wall substantially axially symmetric about a first axis;a first inlet;a second inlet; and each sub-volume has a plurality of plenum gas distribution holes passing through a bottom portion of the outer wall,', 'the odd sub-volumes form a first plenum volume,', 'the even sub-volumes form a second plenum volume,', 'the first inlet is configured to supply a first process gas to the odd sub-volumes,', 'the second inlet is configured to supply a second process gas to the even sub-volumes,', 'the first plenum volume is fluidically isolated from the second plenum volume between the plenum gas distribution holes and the first inlet, and', 'the second plenum volume is fluidically isolated from the first plenum volume between the plenum gas distribution holes and the second inlet., 'a dual plenum volume substantially defined by the outer wall, the dual plenum volume divided into an even number of sub-volumes by radial barriers substantially extending from locations proximate to the first axis to the outer wall, wherein3. The apparatus of claim 2 , wherein the sub-volumes are all substantially the same size and overall shape.4. The apparatus of claim 2 , wherein one or more of the sub-volumes is further partitioned into two or more sub-sub-volumes by one or more additional radial barriers and wherein each of the sub-sub-volumes of a sub-volume is configured to be supplied the same process gas.5. The apparatus of claim 2 , further comprising:a first gas feed tube with a first interior volume, and the first ...

DATA ANALYSIS METHOD FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process. 1. A data analyzing method of an etching apparatus comprising the steps of:generating a wavelength combination from wavelength band of plasma emission generated by etching a specimen;setting a time interval for calculating an average value of emission intensity in a time period for etching the specimen with respect to each of the generated wavelength combinations;calculating a prediction error upon prediction of an etching processing result using the emission intensity average value in the time interval with respect to each of the generated wavelength combinations; andselecting a combination of wavelength and time interval, which exhibits a minimum value of the calculated prediction error, as the combination of wavelength and time interval used for predicting the etching processing result.2. The data analyzing method of an etching apparatus according to claim 1 , wherein in the step of selecting a combination of wavelength and time interval claim 1 , the wavelength combination is specified based on the calculated prediction error claim 1 , a ...

SHOWER PLATE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion. 17-. (canceled)8. A shower plate comprising:an upper dielectric disposed to face a stage; andan upper electrode embedded in the upper dielectric,wherein a distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion of the shower plate than in a central portion of the shower plate.9. The shower plate of claim 8 , wherein the upper electrode includes two or more conductive layers.10. The shower plate of claim 9 , wherein the upper dielectric includes gas ejection holes.11. The shower plate of claim 10 , wherein a radio frequency voltage of 30 to 300 MHz is12. The shower plate of claim 8 , wherein the upper dielectric includes gas ejection holes.13. The shower plate of claim 8 , wherein a radio frequency voltage of 30 to 300 MHz is applied to the upper electrode.14. A plasma processing apparatus comprising a shower plate that comprises an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric claim 8 ,wherein a distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion of the shower plate than in a central portion of the shower plate, a lower dielectric disposed to face the upper dielectric; and', 'a lower electrode embedded in the lower dielectric, and, 'wherein the stage includes a processing container configured to accommodate the shower plate and the stage; and', 'a radio frequency power supply configured to generate plasma in the processing container., ' ...

METHODS AND SYSTEMS FOR PLASMA DEPOSITION AND TREATMENT

This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot. 1. A plasma deposition apparatus , comprising:a waveguide conduit having a plurality of slots therein, said waveguide conduit being coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots, said waveguide conduit further comprising secondary slots opposite said plurality of slots;a set of secondary plungers fitted in said secondary slots to amplify radiation emitted through said plurality of slots; andone or more pipes having an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots.2. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are located on a side of the waveguide conduit to allow for the passage of the microwaves in a direction generally perpendicular to the primary axis.3. The apparatus of claim 1 , wherein the waveguide conduit has a primary axis extending therethrough claim 1 , and wherein the plurality of slots are oriented at an angle ranging between 0° and 90° to the primary axis.4. The apparatus of claim 1 , wherein at least some of the pipes convey ...

PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes: a vessel which includes a reaction chamber, atmosphere within the reaction chamber capable of being depressurized; a lower electrode which supports an object to be processed within the reaction chamber; a dielectric member which includes a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; and a coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber. The dielectric member has a groove formed in the first surface of the dielectric member, and at least a part of the coil is disposed in the groove. 1. A plasma processing apparatus , comprising:a vessel which comprises a reaction chamber, wherein atmosphere within the reaction chamber is capable of being depressurized;a lower electrode which supports an object to be processed within the reaction chamber;a dielectric member which comprises a first surface and a second surface opposite to the first surface, and which closes an opening of the vessel such that the first surface opposes an outside of the reaction chamber and the second surface opposes the object to be processed; anda coil which opposes the first surface of the dielectric member, and which generates plasma within the reaction chamber,wherein the dielectric member has a groove having an annular shape and formed in the first surface of the dielectric member, andwherein at least a part of the coil is disposed in the groove, andwherein a depth of the groove increases stepwise from an inner circumference of the groove toward an outer circumference of the groove.2. The plasma processing apparatus according to claim 1 ,wherein a center of the groove is substantially overlapped with a center of the coil as viewed from a direction perpendicular to the first surface of the dielectric ...

System, method, and apparatus for controlling ion energy distribution in plasma processing systems

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

METHOD FOR RF POWER DISTRIBUTION IN A MULTI-ZONE ELECTRODE ARRAY

Embodiments of systems and methods for RF power distribution in a multi-zone electrode array are described. A system may include a plasma source configured to generate a plasma field. Also, the system may include an RF power source coupled to the plasma source and configured to supply RF power to the plasma source. The system may also include a source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source. 1. A system for plasma processing , comprising:a plasma source configured to generate a plasma field;a Radio Frequency (RF) power source coupled to the plasma source and configured to supply RF power to the plasma source; anda source controller coupled to the RF power source and configured to control modulation of the RF power supplied to the plasma source to enhance uniformity of a plasma field generated by the plasma source.2. The system of claim 1 , wherein the plasma source further comprises a first electrode assembly and a second electrode assembly.3. The system of claim 2 , wherein the first electrode assembly comprises a plurality of source electrodes.4. The system of claim 2 , wherein the number of source electrodes in the first electrode assembly is in the range of 1 to 100.5. The system of claim 3 , wherein the first electrode assembly is coupled to a first multiplexer.6. The system of claim 5 , wherein the first multiplexer comprise a switch for selectably applying RF power to the each of the plurality of source electrodes in the first electrode assembly independently.7. The system of claim 2 , wherein the second electrode assembly comprises a plurality of source electrodes.8. The system of claim 2 , wherein the number of source electrodes in the second electrode assembly is in the range of 1 to 100.9. The system of claim 7 , wherein the second electrode assembly is coupled to a second multiplexer.10. The system of ...

Non-Thermal Soft Plasma Cleaning

The present invention provides a Soft Plasma Cleaning (SPC) system () including a Guided Soft-Plasma Cleaning (G-SPC) (). The SPC system is a non-thermal, low temperature process and operable at atmosphere pressure, in both air and liquid medium. In an embodiment, a feedstock gas () is supplied to provide a discharging fluid () in the cleaning chamber (). A plasma guiding and amplifying component () guides and expands the discharging fluid to cover a large ablation area over the workpiece (), thereby also suppressing ion and electron bombardment damage or etching. The plasma guiding and amplifying component () may be formed with dielectric plates or tubes () with each dielectric having an aperture (a). The electric field and ion energy in the cleaning chamber can be additionally controlled via a floating electrode (), so as to suppress plasma damage during SPC. 1. A non-thermal soft plasma cleaning system comprising:a cleaning chamber containing fluid at atmospheric pressure;an electrode disposed in the cleaning chamber, wherein the electrode is connected to a power generator through a power matching unit; anda dielectric member disposed adjacent to the electrode to guide or direct a plasma generated between the electrode and a workpiece to reach the workpiece in a sweeping direction;wherein the workpiece is cleaned by the plasma without causing any plasma damage.2. The non-thermal soft plasma cleaning system according to claim 1 , wherein the dielectric member has an aperture claim 1 , so that the plasma goes through the aperture to reach the workpiece in said sweeping direction.3. The non-thermal soft plasma cleaning system according to claim 1 , wherein the fluid in the cleaning chamber is air or a gas; further comprising a feedstock gas to combine with the plasma into a discharging fluid flow claim 1 , to guide the plasma to the workpiece claim 1 , and to expand a cleaning area claim 1 , so as to with the feedstock gas adding plasma species into the plasma.4. ...

ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED COATINGS ON LIDS AND NOZZLES

A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. 1. A chamber component for an etch reactor comprising:a lid or nozzle comprising a ceramic body; anda protective layer on at least one surface of the ceramic body, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm that has an average surface roughness of below 10 micro-inches.2. The chamber component of claim 1 , wherein the protective layer comprises at least one of YAlO claim 1 , YAlO claim 1 , ErO claim 1 , GdO claim 1 , ErAlO claim 1 , GdAlO claim 1 , YF claim 1 , NdO claim 1 , ErAlO claim 1 , ErAlO claim 1 , GdAlO claim 1 , GdAlO claim 1 , NdAlO claim 1 , NdAlO claim 1 , NdAlO claim 1 , or a ceramic compound comprising YAlOand a solid-solution of YO—ZrO.3. The chamber component of claim 1 , wherein the protective layer has a thickness of 10-30 μm.4. The chamber component of claim 1 , wherein the protective layer comprises a ceramic compound comprising YAlOand a solid-solution of YO—ZrO claim 1 , wherein the ceramic compound has a composition selected from a list consisting of:40-100 mol % of Y2O3, 0-60 mol % of ZrO2, and 0-10 mol % of Al2O3;40-60 mol % of Y2O3, 30-50 mol % of ZrO2, and 10-20 mol % of Al2O3;40-50 mol % of Y2O3, 20-40 mol % of ZrO2, and 20-40 mol % of Al2O3;70-90 mol % of Y2O3, 0-20 mol % of ZrO2, and 10-20 mol % of Al2O3;60-80 mol % of Y2O3, 0-10 mol % of ZrO2, and 20-40 mol % of Al2O3; and40-60 mol % of Y2O3, 0-20 mol % of ZrO2, and 30-40 mol % of Al2O3.5. The chamber component of claim 1 , wherein the protective layer comprises a combination of YO claim 1 , Zr2O3 claim 1 , ErO claim 1 , GdOand SiO.6 ...

CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE SAME

A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate. 1. A chemical vapor deposition apparatus comprising:a chamber;a susceptor disposed in the chamber and supporting a substrate having an organic light-emitting diode;a backing plate disposed over the susceptor and spaced apart from the susceptor by a predetermined distance;a diffuser disposed between the backing plate and the susceptor and providing a deposition gas to the substrate; anda first insulator comprising: a first portion covering a top surface of the backing plate; and a second portion assembled with the first portion and covering a sidewall of the backing plate.2. The chemical vapor deposition apparatus of claim 1 , wherein each of the first portion and the second portion includes a plurality of assembled blocks.3. The chemical vapor deposition apparatus of claim 2 , wherein the first portion entirely covers the top surface of the backing plate.4. The chemical vapor deposition apparatus of claim 1 , wherein the first insulator includes at least one of polytetrafluoroethylene (PTFE) claim 1 , polychlorotrifluoroethylene (PCTFE) claim 1 , polyvinylidene fluoride (PVDF) claim 1 , or polyvinyl fluoride (PVF).5. The chemical vapor deposition apparatus of claim 1 , further comprising:a second insulator assembled with the first insulator and connected to the chamber and the diffuser.6. The chemical vapor deposition apparatus of claim 5 , wherein the second insulator has a frame shape exposing the diffuser and includes a plurality of assembled blocks.7. The chemical vapor deposition apparatus of claim 5 , wherein the second insulator includes ceramic and insulates the diffuser ...

Variable mode plasma chamber utilizing tunable plasma potential

Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.

PLASMA PROCESSING APPARATUS, PLASMA STATE DETECTION METHOD, AND PLASMA STATE DETECTION PROGRAM

A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator. 1. A plasma processing apparatus comprising:a stage provided with a heater configured to adjust a temperature of a mounting surface on which a workpiece as an object to be plasma-processed is placed;a heater controller configured to control power supplied to the heater such that the heater has a set temperature;a measurement part configured to control the power supplied to the heater such that a temperature of the heater becomes constant by using the heater controller, and configured to measure the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited;a parameter calculator configured to perform fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and configured to calculate the heat input amount; andan output part configured to output information based on the heat input amount calculated by the parameter calculator.2. The plasma processing apparatus of claim 1 , wherein ...

PLASMA CVD DEVICE AND PLASMA CVD METHOD

The present invention relates to a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided. 1. A plasma CVD device comprising a plasma CVD electrode unit and a substrate-holding mechanism in a vacuum chamber , wherein the plasma CVD electrode unit comprises:an anode;a cathode facing the anode at a distance; anda first gas supply nozzle supplying a gas through a plasma-generation space between the anode and the cathode,the substrate-holding mechanism being provided at a position to contact the gas passing through the plasma-generation space, wherein a gas-supply directional length of the anode and a gas-supply directional length of the cathode are longer than a distance between the anode and cathode.2. The plasma CVD device according to claim 1 , wherein the cathode has a plasma-generation surface on a side facing to the anode and a magnet inside which forms a magnetron magnetic field on the plasma-generation surface.3. The plasma CVD device according to claim 1 , wherein the cathode is constituted by two or more arrayed metal cylindrical electrodes in the gas-supply direction and a plurality of magnets are inserted inside the metal cylindrical electrode.4. The plasma CVD device according to claim 1 , wherein the ...

SYSTEMS AND METHODS FOR ELECTRICAL AND MAGNETIC UNIFORMITY AND SKEW TUNING IN PLASMA PROCESSING REACTORS

In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber. 1. A method for at least one of adjusting or controlling process rate uniformity across a substrate within a plasma chamber , comprising:orienting poles or polar equivalents of one or more magnets of a plasma chamber along a plane disposed above and non-orthogonal to a surface of the substrate to reduce one or more processing rate non-uniformities identified during an evaluation phase; andsubsequently operating the plasma chamber to process the substrate.2. The method according to claim 1 , wherein the orienting comprises radially arranging the one or more magnets on a surface of a showerhead disposed opposite the substrate.3. The method according to claim 2 , wherein the one or more magnets are electromagnets claim 2 , and wherein the orienting further comprises energizing less than all of the electromagnets while operating the plasma chamber.4. The method according to claim 3 , wherein the plasma chamber is a twin plasma chamber claim 3 , the method further including:operating a shared vacuum pump coupled to adjacent plasma chambers to reduce a pressure in each ...

PLASMA PROCESSING APPARATUS

Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode . As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance. 1. A plasma processing apparatus , comprising:a processing container configured to be evacuated;an outer upper electrode installed annularly to face a lower electrode where an object to be processed is placed in the processing container;an inner upper electrode disposed to be insulated inside a radial direction of the outer upper electrode;a processing gas supply unit configured to supply a processing gas to a processing space between the outer upper electrode and the inner upper electrode, and the lower electrode;a first high-frequency power supply configured to output a first high-frequency wave having a frequency suitable for generating plasma of the processing gas;a first power feeding unit provided with a cylindrical conductive member consecutively connected to the outer upper electrode in a circumferential direction and configured to apply the first high-frequency wave from the first high-frequency power supply to the outer upper electrode through the cylindrical conductive member;a second power feeding unit provided with a rod-shaped central conductive member connected to the center of the inner upper electrode, and configured to branch the first high-frequency wave from the first high-frequency power supply from the first power feeding unit to supply the branched-off first high-frequency wave to the inner upper electrode through the central conductive member; anda variable condenser and a variable inductor installed in series to the central ...

PLASMA UNIFORMITY CONTROL BY GAS DIFFUSER HOLE DESIGN

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support. 1. A method of depositing a thin film on a substrate , comprising:placing a substrate on a substrate support that is mounted in a processing region of a processing chamber;flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side; andcreating a plasma between the downstream side of the diffuser plate and the substrate support.2. The method of claim 1 , wherein each of the gas passages comprise a hollow cathode cavity in fluid communication with the downstream side.3. The method of claim 2 , wherein a volume claim 2 , a surface area claim 2 , or a density of each of the gas passages varies across the diffuser plate to obtain a desired thin film thickness and property uniformity.4. The method of claim 1 , wherein the diffuser plate is rectangular.5. The method of claim 1 , wherein the diffuser plate size is at least 1 claim 1 ,200 claim 1 ,000 mm.6. The method of claim 1 , wherein each of the gas passages comprise:an orifice hole having a first diameter; anda hollow cathode cavity that is downstream of and in fluid ...

QUANTUM PRESSURE STANDARD AND METHODS FOR DETERMINING AND USING SAME

A method determines a total velocity average cross-section parameter σν in a relationship of the form Γ(U)=nσν·ƒ(U, U), where: Γ(U) is a rate of exponential loss of sensor atoms from a cold atom sensor trap of trap depth potential energy U in a vacuum environment due to collisions with residual particles in the vacuum environment; nis a number density of residual particles in the vacuum environment; Uis a parameter given by 6. A method according to claim 5 , wherein prepresents a probability that a sensor atom stays in the cold atom sensor trap after a collision with a residual particle.7. A method according to claim 5 , wherein the parameters βof the model function ƒ(U claim 5 , U) are determined based on a theoretical model of collisions between the sensor atoms and the residual particles.83. A method according to wherein the parameters of the model function ƒ(U claim 5 , U) are experimentally determined.9. A method for determining a number density nof second residual particles in a second vacuum environment comprising second sensor atoms trapped in a second cold atom sensor trap of trap depth potential energy U* claim 5 , the method comprising:{'img': [{'@id': 'CUSTOM-CHARACTER-00222', '@he': '3.22mm', '@wi': '1.10mm', '@file': 'US20200025639A1-20200123-P00001.TIF', '@alt': 'custom-character', '@img-content': 'character', '@img-format': 'tif'}, {'@id': 'CUSTOM-CHARACTER-00223', '@he': '3.22mm', '@wi': '1.10mm', '@file': 'US20200025639A1-20200123-P00002.TIF', '@alt': 'custom-character', '@img-content': 'character', '@img-format': 'tif'}], 'sub': 'tot', 'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'using the total velocity average cross-section parameter σν determined in accordance with the method of wherein the second sensor atoms are the same as the sensor atoms and the second residual particles are the same as the residual particles;'}{'sub': 'loss', 'measuring a loss rate Γ(U=U*) of the second sensor atoms from the second cold atom sensor trap at the trap ...

SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus having a simplified exhaust structure includes: a substrate supporting unit configured to support a substrate; a first lid on the substrate supporting unit, the first lid including at least one processing unit; a second lid under the first lid, the second lid including a partition wall; and a support arranged under the first lid and the second lid and including an opening and a seating portion on the opening, wherein the second lid is on the seating portion of the support. 1. A substrate processing apparatus comprising:a substrate supporting unit configured to support a substrate;a first lid on the substrate supporting unit, the first lid comprising at least one processing unit;a second lid under the first lid, the second lid comprising a partition wall; anda support arranged under the first lid and the second lid and comprising an opening and a seating portion on the opening,wherein the second lid is on the seating portion of the support.2. The substrate processing apparatus of claim 1 ,wherein a reaction space is formed between the substrate supporting unit and the processing unit, andan exhaust space is formed between the second lid and the support.3. The substrate processing apparatus of claim 2 ,wherein a first surface of the partition wall defines the reaction space, anda second surface of the partition wall defines the exhaust space.4. The substrate processing apparatus of claim 3 ,wherein the exhaust space is arranged to surround the reaction space,a channel connecting the reaction space and the exhaust space is formed under the partition wall, anda gas in the reaction space is exhausted to the outside through the channel, the exhaust space, and the opening.5. The substrate processing apparatus of claim 1 ,wherein the second lid is detachably fixed to the support.6. The substrate processing apparatus of claim 5 ,wherein the seating portion of the support includes a stepped structure, andthe second lid is arranged to be ...

GAS DISTRIBUTOR AND FLOW VERIFIER

Apparatus and methods for distributing and mixing gas are provided. In one example, a gas distributor comprises a body, a gas inlet for admitting gas to the body, an orbital array of gas outlets for distributing the gas to an external component, and a central gas distribution point disposed within the body at a center of the orbital array of gas outlets and in fluid communication with the orbital array of gas outlets. 1. A gas distributor comprising:a body;a gas inlet for admitting gas to the body;an orbital array of gas outlets for distributing the gas to an external component; anda central gas distribution point disposed within the body at a center of the orbital array of gas outlets and in fluid communication with the orbital array of gas outlets.2. The gas distributor of claim 1 , wherein the orbital array of gas outlets are radially spaced equidistantly around the central gas distribution point.3. The gas distributor of claim 1 , wherein the body includes internal gas conduits connecting the central gas distribution point to the orbital array of gas outlets.4. The gas distributor of claim 3 , wherein respective gas flow paths of the internal gas conduits from the central gas distribution point to the orbital array of gas outlets are equal in length.5. The gas distributor of claim 1 , wherein each gas outlet includes an orifice sized to permit or regulate a predetermined flow of gas going through that gas outlet.6. The gas distributor of claim 5 , wherein the body includes mounting locations for respective control valves or nozzles to permit or regulate predetermined flows of gas exiting the gas outlets.7. The gas distributor of claim 6 , wherein each of the control valves or nozzles includes an orifice.8. The gas distributor of claim 6 , further comprising the control valves or nozzles.9. The gas distributor of claim 8 , wherein the control valves or nozzles are replaceable.10. The gas distributor of claim 8 , wherein the control valves or nozzles are ...

SHOWERHEAD

A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder includes: a plate-shaped ceramic substrate; a plurality of through holes penetrating the ceramic substrate in the direction of the thickness of the ceramic substrate; and a plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on the side of a surface of the ceramic substrate facing the wafer holder. 1. A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder , comprising:a plate-shaped ceramic substrate;a plurality of through holes penetrating the ceramic substrate in a direction of a thickness of the ceramic substrate; anda plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on a side of a surface of the ceramic substrate facing the wafer holder.2. The showerhead according to claim 1 , wherein the plurality of conductors are embedded in the ceramic substrate at different positions claim 1 , respectively claim 1 , as seen in the direction of the thickness of the ceramic substrate.3. The showerhead according to claim 1 , further comprising: a lead-out circuit embedded in the ceramic substrate at a position different from that of at least one of the plurality of conductors as seen in the direction of the thickness of the ceramic substrate claim 1 , and electrically connected to the at least one conductor; and a terminal portion disposed at a circumferential portion of the ceramic substrate and electrically connected to the at least one conductor via the lead-out circuit.4. The showerhead according to claim 1 , further comprising a resistive claim 1 , heat generating element embedded in the ceramic substrate.5. The showerhead according to claim 4 , wherein the resistive claim 4 , heat generating element is embedded in the ceramic substrate at a position different from that of at least ...

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM HAVING THE SAME

A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor. 1. A substrate treating apparatus , comprising:a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and an insulative body,', 'an antenna disposed on an upper surface of the insulative body,', 'a protection layer disposed on a lower surface of the insulative body, and', 'an etch resistor protruding from at least a portion of the protection layer toward the process space., 'a dielectric window arranged at an upper portion of the process chamber to define a process space, and including2. The substrate treating apparatus of claim 1 , wherein the insulative body includes at least one of alumina (AlO) claim 1 , quartz claim 1 , silicon carbide (SiC) claim 1 , and resin claim 1 , andthe protection layer includes a metal oxide.3. The substrate treating apparatus of claim 2 , wherein the metal oxide includes at least one of yttrium oxide (YO) claim 2 , zirconium oxide (ZrO) claim 2 , manganese oxide (MnO) and yttrium aluminum garnet (YAlO).4. The substrate treating apparatus of claim 1 , wherein a thickness of the etch resistor is in a range of 30% to 50% of a thickness of the protection layer.5. The substrate treating apparatus of ...

PLASMA ETCHING METHOD USING FARADAY BOX

A plasma etching method using a Faraday cage which is capable of inhibiting the formation of a needle-like structure and forming a pattern portion having a depth gradient on an etching base. 1. A plasma etching method using a Faraday cage , the plasma etching method comprising:providing an etching base in the Faraday cage, wherein the Faraday cage has a mesh part provided on an upper side of the Faraday cage;shielding at least a part of the mesh part with a shutter; andforming a pattern portion on the etching base by performing plasma etching on the etching base while moving the shutter in a direction from an outer portion of the Faraday cage to a central portion of the Faraday cage to prepare a patterned etching base,wherein a depth of the pattern portion gradually changes in a direction from one side of the etching base to an opposite side of the etching base.2. The plasma etching method of claim 1 , wherein the shutter is moved at a speed that changes in the direction from the outer portion of the Faraday cage to the central portion of the Faraday cage.3. The plasma etching method of claim 1 , wherein the shutter is moved at a speed of 1 mm/min or more and 500 mm/min or less.4. The plasma etching method of claim 1 , wherein a spacing distance between the etching base and the mesh part is 1 mm or more and 35 mm or less.5. The plasma etching method of claim 1 , wherein the plasma etching includes adjusting an ICP power of a plasma etching device to 0.1 kW or more and 4 kW or less and adjusting a RF power of the plasma etching device to 10 W or more and 200 W or less.6. The plasma etching method of claim 1 , wherein the plasma etching includes adjusting an operating pressure of a plasma etching device to 1 mTorr or more and 30 mTorr or less.7. The plasma etching method of claim 1 , wherein the plasma etching includes supplying a gas mixture including a reactive gas and an oxygen gas to a plasma etching device at a flow rate of 10 sccm or more and 200 sccm or less.8. ...

APPARATUS AND METHOD FOR TREATING SUBSTRATE

An apparatus for treating a substrate includes a chamber having a treatment space in which the substrate is treated, a substrate support unit that supports the substrate in the treatment space, a gas supply unit that supplies a gas into the treatment space, an exhaust line connected to the chamber, and a pressure-reducing member that reduces pressure in the exhaust line and releases process by-products generated in the treatment space. The exhaust line includes a first line connected to the chamber, a second line equipped with the pressure-reducing member, and a filter tube that connects the first line and the second line, and the filter tube has a corrugated side surface. 1. An apparatus for treating a substrate , the apparatus comprising:a chamber having a treatment space in which the substrate is treated;a substrate support unit configured to support the substrate in the treatment space;a gas supply unit configured to supply a gas into the treatment space;an exhaust line connected to the chamber; anda pressure-reducing member configured to reduce pressure in the exhaust line and release process by-products generated in the treatment space,wherein the exhaust line includes:a first line connected to the chamber;a second line equipped with the pressure-reducing member; anda filter tube configured to connect the first line and the second line, andwherein the filter tube has a corrugated side surface.2. The apparatus of claim 1 , wherein the filter tube is detachable from the first line and the second line.3. The apparatus of claim 2 , wherein an outer circumferential surface of the filter tube has a corrugated shape claim 2 , andwherein the filter tube has a lower temperature than the first line and the second line.4. The apparatus of claim 3 , wherein temperature outside the filter tube is lower than temperature inside the filter tube claim 3 , andwherein the filter tube is formed of a material having a higher thermal conductivity than the first line and the second ...

NANOSECOND PULSER RF ISOLATION

Some embodiments include a plasma system that includes a plasma chamber; an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MHz; a nanosecond pulser driving pulses into the plasma chamber with a pulse repetition frequency a peak voltage, the pulse repetition frequency being less than the RF frequency and the peak voltage being greater than 2 kV; a first filter disposed between the RF driver and the plasma chamber; and a second filter disposed between the nanosecond pulser and the plasma chamber. 1. A plasma system comprising:a plasma chamber;an RF driver driving RF bursts into the plasma chamber with an RF frequency greater than 2 MHz;a nanosecond pulser driving pulses into the plasma chamber with a pulse repetition frequency and a peak voltage, the pulse repetition frequency being less than the RF frequency and the peak voltage being greater than 2 kV;a first filter disposed between the RF driver and the plasma chamber; anda second filter disposed between the nanosecond pulser and the plasma chamber.2. The plasma system according to claim 1 , wherein the pulse repetition frequency is greater than 10 kHz.3. The plasma system according to claim 1 , wherein first filter includes a capacitor in series with the RF driver and the plasma chamber claim 1 , the capacitor includes a capacitance less than about 500 pH.4. The plasma system according to claim 1 , wherein first filter includes an inductor coupled with an output of the RF driver and ground.5. The plasma system according to claim 1 , wherein the second filter includes an inductor in series with the nanosecond pulser and the plasma chamber claim 1 , the inductor having an inductance less than about 50 μH.6. The plasma system according to claim 1 , wherein the second filter includes a capacitor in coupled with an output of the nanosecond pulser and ground.7. The plasma system according to claim 1 , wherein the first filter comprises a high pass filter.8. The plasma system ...

Microwave Plasma Source and Plasma Processing Apparatus

There is provided a microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma, including: a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; and a perforated plate provided in a high electric field formation region used as a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces. The perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate, and a function of keeping high a power absorption efficiency of plasma generated in the space. 1. A microwave plasma source for radiating microwaves into a chamber of a plasma processing apparatus to generate surface wave plasma , comprising:a plurality of microwave radiation mechanisms provided in a ceiling wall of the chamber and configured to radiate microwaves into the chamber; anda perforated plate provided in a high electric field formation region which becomes a high electric field region when the microwaves are radiated from microwave radiation surfaces of the microwave radiation mechanisms into the chamber and which exists just below the microwave radiation surfaces, the perforated plate having a plurality of holes formed therein, the perforated plate set at a ground potential and made of an electrically conductive material, wherein the perforated plate has a function of confining surface waves formed just below the microwave radiation surfaces when the microwaves are radiated from the microwave radiation mechanism, in a space surrounded by the microwave radiation surfaces and the perforated plate and ...

GAS DISTRIBUTION APPARATUS IN A VACUUM CHAMBER, COMPRISING A GAS CONDUCTING DEVICE

A gas distribution apparatus in a vacuum chamber includes a gas conducting device that includes at least one gas duct equipped with nozzles from which gas can be distributed into the vacuum chamber, and a gas supplying device which allows gas to be supplied to the gas conducting device. The at least one gas duct is formed by a part designed as a single-piece hollow profile. The part designed as a single-piece hollow profile also forms at least one gas supply channel of the gas supplying device. 116-. (canceled)17. A gas distribution apparatus of a vacuum chamber comprising a gas conducting device having at least one main duct that includes nozzles from which gas can be distributed into the vacuum chamber and comprising a gas supplying device with which gas can be supplied to the gas conducting device , wherein the at least one main duct is formed by a single-piece component designed as a hollow profile , and at least one main gas supply duct of the gas supplying device and at least one tuning duct with tuning duct nozzles from which tuning gas can be distributed into the vacuum chamber is also formed by the single-piece component designed as a hollow profile , wherein the component is designed as an extruded section.18. The gas distribution apparatus of a vacuum chamber comprising a gas conducting device according to claim 17 , wherein at least one tuning gas supply duct is also formed by the single-piece component designed as a hollow profile.19. The gas distribution apparatus according to claim 17 , wherein the at least one tuning duct includes multiple chamber-like segments arranged one after the other along a longitudinal extension of the duct.20. The gas distribution apparatus according to claim 19 , wherein at least two consecutive segments have a common transverse partition wall.21. The gas distribution apparatus according to claim 19 , wherein tuning gas is or can be supplied to each segment via at least one tuning gas supply duct.22. The gas distribution ...

PLASMA PROCESSING APPARATUS AND METHOD

An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. 1. (canceled)2. A plasma processing apparatus comprising:a process container that forms a process space to accommodate a target substrate;an exhaust unit connected to an exhaust port of the process container to vacuum-exhaust gas from inside the process container;an exhaust plate interposed between the process space and the exhaust port rectify a flow of exhaust gas;a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being an upper electrode and the second electrode being a lower electrode and configured to support the target substrate through a mount face;a first RF power application unit configured to apply a first RF power to the second electrode;a second RF power application unit configured to apply a second RF power to the second electrode;a DC power supply configured to apply a DC voltage to the first electrode;a process gas supply unit configured to supply a process gas into the process container; anda conductive member disposed within the process container and grounded to release through plasma a current caused by the DC voltage applied from the DC power supply to the first electrode, the conductive member being disposed as a ring around the first electrode.3. The plasma processing apparatus according to claim 2 , further comprising a switching mechanism configured to switch from a first state where the conductive member is connected to ...

Cold Plasma Annular Array Methods and Apparatus

Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits greater tissue penetration by cold plasma treatments. This approach enables treatment of deeper infections of soft and hard tissues without surgical intervention. For example, this approach can treat sub-integumental infections, such as those common to joint replacements, without surgically opening the issues overlying the deeper infection. 1. An apparatus comprising:an annular structure having two or more cold plasma devices positioned to provide converging cold plasma jets that converge at a treatment area, wherein at least one of the two or more cold plasma devices is coupled to one or more harmonic high voltage RF power supplies.2. The apparatus of claim 1 , wherein the two or more cold plasma devices are positioned in a circumferential orientation.3. The apparatus of claim 1 , further configured to include a plurality of port locations claim 1 , wherein the two or more cold plasma devices occupy a subset of the plurality of port locations.4. The apparatus of claim 1 , wherein the annular structure is adjustable claim 1 , the annular structure being further configured to be lockable to ensure a predetermined alignment of the two or more cold plasma devices.5. The apparatus of claim 1 , wherein the two or more cold plasma devices are configured to generate two or more cold plasma jets that are diametrically opposed to one another claim 1 , the treatment area being located between the two or more cold plasma devices.6. The apparatus of claim 1 , wherein the two or more cold plasma devices are coupled to a common triggering mechanism to simultaneously activate the two or more cold plasma devices.7. The apparatus of claim 1 , wherein functionality settings of the two or more cold plasma devices are independently configurable to provide a desired treatment regime at the treatment area.8. The apparatus of ...

An apparatus for atomic layer deposition

The invention relates to an apparatus for subjecting a surface of a substrate to surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprises a reaction chamber (1) forming a reaction space (2) for receiving precursor gases reacting on the surface of the substrate. The apparatus further comprises a substrate support (3) for holding the substrate; a dielectric plate (4); and an electrode (7) coupled to a voltage source (8) to induce voltage to the electrode (7) for generating electric discharge to the reaction space (2). The dielectric plate (4) is arranged between the substrate support (3) and the electrode (7) and such that the reaction space (2) is arranged between the substrate support (3) and the dielectric plate (4).

PLASMA PROCESSING APPARATUS AND GAS SUPPLY MEMBER

Disclosed is a plasma processing apparatus including: a processing container; a support member provided within the processing container and configured to support a processing target substrate; and a gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply holes. The first to third regions are disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate, and the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container. 1. A plasma processing apparatus comprising:a processing container;a support member provided within the processing container and configured to support a processing target substrate; anda gas supply member including a first region formed with a gas supply hole, a second region not formed with a gas supply hole, and a third region formed with a gas supply hole, the first region, the second region, and the third region being disposed sequentially from a central portion side of the processing target substrate along a radial direction of the processing target substrate,wherein the plasma processing apparatus is processed to introduce a processing gas from the gas supply holes of the gas supply member for plasma processing of the processing target substrate into the processing container.2. The plasma processing apparatus of claim 1 , wherein the gas supply hole formed in the third region is disposed at a position outside a position inwardly spaced apart from a periphery of the processing target substrate by 10 mm along the radial direction of the processing target substrate.3. The plasma processing apparatus of claim 1 , wherein the gas supply hole formed in the third region is disposed in a range from a position ...

PLASMA PROCESSING APPARATUS

There is provided a plasma processing apparatus including a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The plasma processing apparatus comprises: a chamber for performing a plasma process on a target object; a mounting table configured to mount thereon the target object; and a focus ring configured to surround the target object, the focus ring being in contact with the mounting table via a flexible heat transfer sheet. Further, the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, and the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table. Furthermore, the anti-adhesion layer contains heat conductive particulates, and the heat transfer sheet is formed in an annular shape. 1. A plasma processing apparatus comprising:a chamber for performing a plasma process on a target object;a mounting table configured to mount thereon the target object within the chamber; anda focus ring configured to surround the target object mounted on the mounting table, the focus ring being in contact with the mounting table via a flexible heat transfer sheet,wherein the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, wherein the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table,the anti-adhesion layer contains heat conductive particulates,the heat transfer sheet is formed in an annular shape, andthe anti-adhesion layer is not formed on areas of said contact surface within at least about 1 mm from an inner periphery of the heat transfer sheet toward an outer periphery thereof, and within at least about 1 mm from an outer periphery of the heat transfer sheet toward an inner periphery thereof, ...

APPARATUS AND METHOD FOR TREATING SUBSTRATE

The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit disposed in the process chamber to support a substrate, a gas supply unit configured to supply a process gas into the process chamber, and a plasma generating unit configured to generate plasma from the process gas. The plasma generating unit includes an upper electrode disposed on the substrate, a lower electrode disposed under the substrate to be vertically opposite to the upper electrode, and three high frequency power sources configured to apply high frequency power to the lower electrode. The three high frequency power sources include a first frequency power source and a second frequency power source having frequencies of 10 MHz or less, and a third frequency power source having a frequency of 10 MHz or more. 1. A substrate treating apparatus comprising:a process chamber having a treatment space in the interior thereof;a support unit disposed in the process chamber to support a substrate;a gas supply unit configured to supply a process gas into the process chamber; anda plasma generating unit configured to generate plasma from the process gas, wherein the plasma generating unit includes:an upper electrode disposed on the substrate;a lower electrode disposed under the substrate to be vertically opposite to the upper electrode; andthree high frequency power sources configured to apply high frequency power to the lower electrode, andwherein the three high frequency power sources include:a first frequency power source and a second frequency power source having frequencies of 10 MHz or less; anda third frequency power source having a frequency of 10 MHz or more.2. The substrate treating apparatus of claim 1 , wherein the first frequency power source and the second frequency power source have frequencies ranging from 50 KHz to 10 MHz claim 1 , and the third frequency power source has a frequency ranging from 10 MHz to 100 MHz.3. The substrate ...

Sub-Pulsing During a State

A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal. 1. A method comprising:generating a pulsed signal based on information regarding the pulsed signal, the pulsed signal having sub-states within a first state and having sub-states within a second state, the sub-states of the first state alternating with respect to each other at a frequency greater than a frequency of the first and second states and the sub-states of the second state alternating with respect to each other at a frequency greater than the frequency of the first and second states;providing the pulsed signal to control power of a first radio frequency (RF) signal that is generated by a first RF generator, the power controlled to be synchronous with the pulsed signal; andsupplying the first RF signal having the sub-states of the first state and having the sub-states of the second state to an impedance matching circuit.2. The method of claim 1 , wherein the information regarding the pulsed signal includes the frequency of the sub-states of the first state claim 1 , a duty cycle of the sub-states of the first state claim 1 , a time for which the first state is to occur claim 1 , the frequency of the sub-states of the second state claim 1 , a duty cycle of the sub-states of the second state claim 1 , and a time for which the second state is to occur.3. The method of claim 1 , further comprising receiving the information regarding the pulsed signal from a host computer or a second RF ...