КОНЦЕНТРАТОР СОЛНЕЧНОГО ИЗЛУЧЕНИЯ (ВАРИАНТЫ)

... 1. Концентратор солнечного излучения, содержащий полый корпус, по меньшей мере, часть которого выполнена прозрачной, фокусирующий элемент и преобразователь энергии, а также систему позиционирования фокусирующего элемента в зависимости от положения солнца, отличающийся тем, что фокусирующий элемент закреплен внутри оболочки, по крайней мере, часть которой выполнена прозрачной, при этом оболочка размещена внутри полого корпуса с возможностью свободного поворота оболочки относительно корпуса в плавающем состоянии при заполнении корпуса в нижней части жидкостью, а система позиционирования выполнена с возможностью поворота оболочки.2. Концентратор по п.1, отличающийся тем, что оболочка выполнена надувной.3. Концентратор по п.1, отличающийся тем, что оболочка выполнена шарообразной формы.4. Концентратор по п.1, отличающийся тем, что преобразователь энергии расположен внутри или снаружи оболочки.5. Концентратор по п.1, отличающийся тем, что фокусирующий элемент выполнен в виде светоотражающей ...

ФОТОПРЕОБРАЗОВАТЕЛЬ КОНЦЕНТРИРОВАННОГО СОЛНЕЧНОГО ИЗЛУЧЕНИЯ

Изобретение относится к устройствам прямого преобразования солнечной энергии в электрическую, касается в основном конструкции фотоэлектрических преобразователей концентрированного излучения (КСИ) и может быть использовано в фотоэлектрических модулях и солнечных фотоэлектрических станциях наземного назначения. Сущность изобретения: в фотопреобразователь КСИ, содержащий солнечный элемент (СЭ) с контактной сеткой и шинами на освещаемой поверхности установленный на основании в охлаждаемом корпусе с патрубками для подачи теплоносителя и защитным стеклом, причем шины на освещаемой стороне продублированы пластинами дополнительных токосъемных шин, введен коллектор с полым электродом, общий для дублирующих пластин. Между СЭ и основанием размещен слой пористой меди, а коллектор выполнен с наклонными отражающими поверхностями. Основание с уплотнением разделяет корпус на два независимых объема, причем в СЭ, основании и дне корпуса выполнены отверстия, через уплотнения которых проходит полый электрод ...

ПРИЕМНИК ИК ИЗЛУЧЕНИЯ

Изобретение относится к фоточувствительным приборам, предназначенным для обнаружения теплового излучения, в частности к охлаждаемым полупроводниковым приемникам ИК излучения. Предложенная конструкция позволит уменьшить охлаждаемую массу, время выхода на рабочий режим, а также уменьшит трудоемкость сборки приемника излучения. Сущность: приемник ИК излучения содержит сосуд Дьюара, образованный внешним цилиндром с входным окном и внутренним охлаждаемым цилиндром, на котором расположен кристалл фотоприемной матрицы, закрепленный на держателе, выполненном в виде пластины, снабженной стойками, расположенными непосредственно на торцевой поверхности охлаждаемого цилиндра. Пластина может быть выполнена прямоугольной формы с размещением стоек по ее углам или круглой с размещением стоек симметрично на равных расстояниях друг от друга, а контактные группы сигнальных выводов расположены по периметру пластины, выполненной из кремния, нитрида алюминия или сапфира, причем кристалл ФПМ закреплен на пластине ...

THERMALLY EFFICIENT CCD CAMERA HOUSING

Method and apparatus for thermal gradient stabilization of microbolometer focal plane arrays

Photowiderstand

Фотоэлектрическая-тепловая панель

Изобретение относится к энергетике, а именно к фотоэлектрическим установкам, основанным на прямом преобразовании солнечной энергии в электрическую энергию посредством фотоэлектрических элементов, и к гелиотехнике, в частности к жидкостным нагревательным приборам. Фотоэлектрическая-тепловая панель включает фотоэлектрические элементы (3) с прозрачной поверхностью (2), электрически соединенные между собой и расположенные на пластиковом листе (5), под которым установлена клеенка (6) с множеством капиллярных трубок (7), через которые циркулирует от распределителя холодной жидкости (8) к коллектору теплой жидкости (9) хладагент, и теплоизоляцию (10), эти все размещены в раме (1). Распределитель холодной жидкости (8) и коллектор теплой жидкости (9) установлены с одной стороны рамы (1) на теплоизоляции (10). Капиллярные трубки (7) образуют на противоположной стороне рамы (1) петли (11). При этом капиллярные трубки (7), которые идут от распределителя холодной жидкости (8), расположены рядом с капиллярными ...

Solar energy photovoltaic power generation device with ventilation device

A solar energy photovoltaic power generation device with a ventilation device comprises a solar cell panel, a positive and negative terminal (7) and a positive and negative terminal (8), wherein the solar cell panel is composed of a plurality of solar cell chips (1), the positive and negative terminal (7) is led out to be used for power supply of a draught fan after two solar cell chips (1) are extracted and connected in series, and the positive and negative terminal (8) is led out to be used for series and parallel power generation of the cell panel after other cell chips are connected in series. The positive and negative terminal (8) which is used for the series and parallel power generation of the cell panel, the direct current draught fan (4) and an on-off controller (5) form a direct current circuit. The direct current draught fan (4) is installed on the back face of the solar cell panel. A mechanical ventilation mode is adopted, and heat erosion on a building by the solar cell panel ...

High di/dt light-control thyristor packaging structure and packaging method

Substrate for mounting electronic component, electronic device, and electronic module

This substrate for mounting an electronic component is provided with: a first substrate having a first main surface, the first substrate having a rectangular electronic component mounting part positioned on the first main surface and having one end in the longitudinal direction positioned on the outer edge of the first main surface; and a second substrate that is positioned on a second main surface facing the first main surface, is made of a carbon material, and has a third main surface facing the second main surface and a fourth main surface facing the third main surface, the third main surface or the fourth main surface being in a planar view, and the third main surface or the fourth main surface being in a planar view. The thermal conductivity in a direction perpendicular to the longitudinal direction of the mounting part is greater than the thermal conductivity in the longitudinal direction of the mounting part.

INFRARED DETECTOR

CRYOSTAT CONFIGURATION FOR RADIATION DETECTOR

DEVICE FOR COOLING A DETECTOR, IN PARTICULAR AN INFRARED RADIATION DETECTOR USES E.G. ON A FLYING CRAFT

Cryostatic photo-detection equipment - has bellows-type extension wall forming seal and generating cold finger pressure

PHOTO-ELECTRIC DEVICES

ANTI?CONDENSATION DEVICE FOR INFRA?RED DETECTOR

COMPOSITE SOLID STATE RADIATION DETECTOR

Improvements with the detectors of radiations

Infrared detection device operating at low temperature

PROCEEDED OF TREATMENT OF PHOTOVOLTAIC CELLS HETEROJUNCTION HAS TO IMPROVE AND STABILIZE THEIR OUTPUT

METHOD FOR TRAPPING A MAGNETIZATION DIRECTION OF A FERROMAGNETIC LAYER AND RESULTING DEVICE

Ce procédé de piégeage de la direction d'aimantation d'une couche ferromagnétique d'un empilement de couches, comporte : - la réalisation (62), dans l'empilement, d'une couche optiquement absorbante, la couche optiquement absorbante étant absente d'une zone voisine et réalisée dans un matériau ayant un coefficient αc1 d'absorption d'un rayonnement de longueur d'onde λ1 supérieur d'au moins 25 % à celui de la zone voisine, et - l'exposition de la zone voisine et de l'empilement au rayonnement de longueur d'onde λ1 pendant une même durée d'exposition, cette durée d'exposition étant prédéterminée pour qu'à son issue, la température de l'empilement, chauffé par la couche optiquement absorbante, dépasse une température de piégeage, tandis que dans les mêmes conditions, la température de la zone voisine, dépourvue de couche absorbante, reste inférieure à cette température de piégeage.

SYSTEM OPTRONQUE IR HAS PREDICTIVE MAINTENANCE OF THE NUMBER OF CYCLES BEFORE BREAKDOWN

SEMICONDUCTOR THERMOBATTERY

The thermobattery shall be used for direct conversion of the environmental heat energy into electric power and shall find application in the continuous supply of electric consumers in the indicated temperature boundaries, regardless of the fact whether it is day- or night-time in any geographical point on the globe. The generation technology is similar to the production of the semiconductor integrated circuits and of the solar electric batteries. The thermobattery includes more than one large-plane diode made of monocrystal material, arranged in two symmetrical columns of independent silicon wafers the number of which is equal to the number of the large-plane diodes which are connected in series. At the output between terminals (8, 9) capacitor (10) is connected. Each of the large-plane diodes is in the form of a processed base wafer of predetermined sizes with a film of a semiconductor of p+ conductivity (1), a film with p conductivity (2), p-n transition with a film of n conductivity ...

Fabrication of semiconductor devices

A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps: (a) applying a seed layer of a thermally conductive metal to the wafer, (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding semiconductor is also disclosed.

METHOD AND APPARATUS FOR CONTROLLING A SOLAR PANEL OUTPUT IN CHARGING A BATTERY

A control system or module and a method are disclosed to maximize the current flow from a solar panel into the battery connected during the solar panel's operation by first tracking an output of the solar panel in determining a maximum power point of the output at a specific instance, identifying a range about the maximum power point, and adjusting a current level of the output by (i) increasing the current level of the output when a voltage level of the output indicates that the voltage level is above a maximum charge voltage of a battery, and (ii) decreasing the current level of the output when the voltage level of the output indicates that the voltage level is below a minimum charge voltage of the battery.

COMPENSATION FOR PHOTO SENSOR

A method of compensating a photo sensor (and a corresponding photo sensor with compensation) insures the accuracy of the photo sensor, e.g., over environmental variations or photo cell variations. The method comprises: providing a first signal indicative of a light level; providing a second signal indicative of an environmental parameter, e.g., temperature; and calculating, responsive to the first signal and the second signal, a compensated signal that is indicative of an absolute light level. The calculating can be performed by a processor and utilize calibration and compensation information or parameters, which can be obtained experimentally.

DEVICE TO REDUCE THE TEMPERATURE OF A SOLAR PHOTOVOLTAIC PANEL

A device which reduces the temperature of a solar PV panel is disclosed. The device includes an enclosure comprising a heat sink attachable to a bottom side of the solar PV panel to provide an air channel, and a tornado tube. The tornado pipe may be oriented vertically to the plane of the earth, and may act as a solar chimney, instigating a flow of air to enter the enclosure through an air inlet. This air flow may be drawn across the heat sink and exit back to the atmosphere through the tornado tube.

PHOTOCELL CONSTRUCTION HAVING TRANSPARENT SUBSTRATE UPON WHICH PHOTOCELL IS DISPOSED AND HEAT SINK

SOLAR DEVICE AND SOLAR SYSTEM COMPRISING THE SAME

Disclosed herein is a prismatic solar device, which includes a triangular body, composed of a solar cell, a reflector and a decorating member. A triangular space is enclosed by the solar cell, reflector and decorating member. A solar system including a plurality of the solar devices is also disclosed.

OPTICAL MODULE

An optical module includes: a thermoelectric cooler with an upper surface and a lower surface, the lower surface fixed to the first surface of the conductive block, the thermoelectric cooler having a Peltier device therein configured to transfer heat between the upper surface and the lower surface; a metal layer laminated on the upper surface of the thermoelectric cooler; a ground wire connecting the first surface of the conductive block and the metal layer; a photoelectric device adapted to convert an optical signal and an electrical signal at least from one to another; a mounting substrate on which the photoelectric device is mounted, the mounting substrate fixed to the upper surface of the thermoelectric cooler with at least the metal layer interposed therebetween, the mounting substrate having a first wiring pattern electrically connected to the photoelectric device.

Temperature controller of optical module package

A temperature controller of an optical module package comprises an optical element and first thermistor fixedly held over a first Peltier element housed in an optical module package with a base interposed therebetween; a second thermistor housed in the optical module package; and a second Peltier element with the optical module package fixedly attached thereon with a mount interposed therebetween. While temperature control of the optical module package is achieved by monitoring the temperature of the optical module package with the second thermistor and controlling the second Peltier element, temperature control of the optical element is achieved by monitoring the temperature of the optical element with the first thermistor and controlling the first Peltier element. The temperature controller of the optical module package is impervious to the effect of open air temperature and capable of saving required space.

Disc detector assembly

A miniature, nonevacuated, detector refrigerator assembly for use in infrared imaging systems is described. The assembly incorporates a miniature Joule-Thomson laminar refrigerator which serves as the substrate for the detector subassembly, electrical leads, as well as the primary structural element of the assembly. The detector subassembly is positioned on the cold region of the refrigerator, surrounded by insulating material and capped by an optical window or filter as required. As a result, the detector is cooled while the contact pads used for connection to external devices are at the ambient temperature. A piece of high thermally conductive material may be placed in the vicinity of the detector subassembly so that during operation gases in the chamber surrounding the detector assembly will preferentially condense thereon rather than on the detector subassembly.

PORTABLE ELECTRONIC DEVICE

The present invention provides a portable electronic device, an image-capturing module thereof and a carrier assembly thereof. The image-capturing module includes a circuit substrate, an image-sensing chip, at least one electronic component, a dispensing package, and a lens assembly. The circuit substrate has a top surface and a bottom surface. The image-sensing chip is electrically connected to the circuit substrate, and the image-sensing chip has an image-sensing area. The at least one electronic component is disposed on the bottom surface of the circuit substrate and electrically connected to the circuit substrate. The dispensing package is disposed on the bottom surface of the circuit substrate to cover the at least one electronic component. The lens assembly includes a holder structure disposed on the top surface of the circuit substrate and a lens structure being held by the holder structure and corresponding to the image-sensing area. 1. A portable electronic device using an image-capturing module , characterized in that the image-capturing module comprises:a circuit substrate having a top surface and a bottom surface;an image-sensing chip electrically connected to the circuit substrate, wherein the image-sensing chip has an image-sensing area;at least one electronic component disposed on the bottom surface of the circuit substrate and electrically connected to the circuit substrate;a dispensing package disposed on the bottom surface of the circuit substrate to cover the at least one electronic component;a lens assembly including a holder structure disposed on the top surface of the circuit substrate and a lens structure being held by the holder structure and corresponding to the image-sensing area; anda filter element disposed on the image-sensing chip, wherein the filter element is disposed in a through opening formed between the top surface and the bottom surface of the circuit substrate.2. The portable electronic device of claim 1 , wherein the image- ...

METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

A semiconductor package including a substrate, a memory chip on the substrate, a mold layer on the substrate to cover a side surface of the memory chip, an image sensor chip on the memory chip and the mold layer, and a connection terminal between and electrically connecting the memory chip to the image sensor chip may be provided.

IMAGE SENSING APPARATUS

An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

ELECTRONIC COMPONENT HOUSING PACKAGE AND ELECTRONIC DEVICE

An electronic component housing package includes a substrate having an upper surface including a mount region on which an electronic component is to be mounted; a frame body disposed on the upper surface of the substrate, the frame body being provided with a through-hole portion; and an input/output member disposed on the frame body so as to block the through-hole portion, the input/output member having wiring conductors which are to be electrically connected to the electronic component, the wiring conductors extending to an inside and outside of the frame body and also extending along a lower surface of the input/output member on the outside of the frame body. The input/output member is provided with a cutout portion which is cut out so as to extend from a gap between the wiring conductors on the lower surface along the wiring conductors to an outer side surface of the input/output member. 1. An electronic component housing package , comprising:a substrate comprising an upper surface including a mount region on which an electronic component is to be mounted;a frame body disposed on the upper surface of the substrate surrounding the mount region, and comprising a through-hole portion which opens to an inside and outside of the frame body; and a plurality of wiring conductors which are to be electrically connected to the electronic component, the wiring conductors extending to the inside and outside of the frame body and also extending along a lower surface of the input/output member on the outside of the frame body; and', 'a cutout portion which is cut out extending from a gap between the plurality of wiring conductors on the lower surface along the wiring conductors to an outer side surface of the input/output member., 'an input/output member disposed on the frame body blocking the through-hole portion, comprising2. The electronic component housing package according to claim 1 , wherein the input/output member is such configured that a second insulating layer is ...

WALL ASSEMBLY WITH PHOTOVOLTAIC PANEL

Semiconductor detector head and a method for manufacturing the same

A semiconductor detector head has a first entity (401) which comprises a detector chip having a front side and a back side, and a substrate on the back side of said detector chip. Contact points are located on at least one of said substrate and said detector chip. A first set of contact pins (402) protrude on an opposite side of said substrate than said detector chip. At least one of the contact pins of said first set (402) is conductively coupled to at least one of said contact points. A second entity (403) has a base plate (404) which holds a second set of contact pins (405) that protrude from said base plate towards the contact pins of said first set. Between the first and second entities a thermoelectric cooler (406) may be provided. Electric connections are made between matching pairs of contact pins of said first and second sets. The use of two sets of matching contact pins enables the application of a detector chip having a large area within the detector head.

Infrared detector cooled using a Stirling cooler

L'invention concerne un capteur infra-rouge comprenant : un ensemble (100) de détecteurs quantiques infra-rouges, destiné à détecter un rayonnement (1) infra-rouge ; un refroidisseur (300) de Stirling dont une surface (11) de refroidissement peut être soumise à des vibrations sous l'effet de cycles de Stirling; un coupleur (200) disposé entre l'ensemble et le refroidisseur, pour coupler thermiquement l'ensemble (100) et le refroidisseur (300) ; caractérisé en ce que le coupleur (200) comprend un évidement (14) pratiqué du côté de l'ensemble (100) et s'étendant au moins en face de la surface (11) de refroidissement du refroidisseur (300) de sorte que le coupleur (200) ne soit pas en contact avec l'ensemble (100) en face de la surface (11) de refroidissement du refroidisseur (300) et que les vibrations auxquelles peut être soumise la surface du refroidisseur (300) ne soient pas transmises à l'ensemble (100), l'évidement (14) étant en outre pratiqué sur une partie de l'épaisseur du coupleur ...

LIGHT DETECTING DEVICE

Housing for infrared sensitive elements

ПРИЕМНИК ИК ИЗЛУЧЕНИЯ

Изобретение относится к фоточувствительным приборам, предназначенным для обнаружения теплового излучения, в частности к охлаждаемым полупроводниковым приемникам ИК излучения. В приемнике ИК излучения, содержащем сосуд Дьюара, образованный внешним цилиндром с входным окном и внутренним охлаждаемым цилиндром, на котором расположен кристалл фотоприемной матрицы (ФПМ), закрепленный на внутренней стороне верхней панели полого держателя с прямоугольным отверстием, держатель выполнен П-образной формы с отверстием на всю ширину верхней панели и установлен непосредственно на торцевую поверхность охлаждаемого цилиндра, причем верхняя панель удлинена по отношению к его боковым стенкам. Кроме того, кристалл ФПМ закреплен на держателе по двум противоположным краям отверстия на внутренней стороне верхней панели, что обеспечивает тепловой контакт в зоне наибольшей рассеивающей мощности в кристалле. При этом частными случаями выполнения может быть изготовление держателя из нитрида алюминия, сапфира или ...

ПРИЕМНИК ИНФРАКРАСНОГО ИЗЛУЧЕНИЯ

Изобретение относится к фоточувствительным приборам, предназначенным для обнаружения электромагнитного излучения, в частности к охлаждаемым полупроводниковым приемникам инфракрасного излучения. Техническим результатом при использовании изобретения являются повышение надежности, уменьшение теплопритоков и электрических наводок при работе приемника излучения, который достигается тем, что в приемнике инфракрасного излучения, содержащем криостат, внутри которого на охлаждаемом держателе расположены кристалл с фоточувствительными элементами и мультиплексор, к которому присоединены выводы управления, питания и сигнальные выводы, подключенные соответственно к блокам управления, питания и обработки сигнала, расположенные снаружи криостата, мультиплексор снабжен фотопреобразователями, к которым присоединены выводы управления, выполненные в виде волоконных световодов, подключенных к светодиодам, установленным в блоке управления. В частном случае выполнения приемника излучения световод может быть ...

Stabilisierung und Isolation einer hybriden Bildebene-Matrix

Information transmission system

An information transmission system is provided for a guided missile 1 in which guidance information is transmitted from the missile launch point to the missile along a beam 8 of 10 mu m wavelength radiation. The missile has a rearwards facing optical system 9 to collect and focus the radiation onto a cooled cadmium mercury telluride detector. The proportion of cadmium to mercury in the detector is chosen so that just after launch in the early stage of detector cool-down the long wavelength cut-off of the detector just includes the 10 mu m radiation, providing an early guidance signal, and so that, as cooling proceeds, the long wavelength cut-off moves to longer wavelengths thereby rapidly enhancing the received signal to compensate for loss of received energy at the missile due to missile range increase.

Infrared imaging sensor and vacuum packaging method

An infrared imaging sensor and a vacuum packaging method thereof are described. The infrared imaging sensor includes a ceramic base 210, a metal cap 220 and an infrared filter 230. The ceramic base has an infrared imaging chip 240 attached thereon and the metal cap includes a getter deposited on an inner surface of the metal cap. The infrared filter seals an opening of the metal cap. The ceramic base, the metal cap and the infrared filter are heated in a vacuum chamber to activate the getter, and to solder the ceramic base, the metal cap and the infrared filter together thereby vacuum packaging the infrared imaging sensor. A thermo electric temperature stabiliser 242 is attached to the ceramic base for controlling the operation temperature of the infrared imaging sensor.

A HOUSING FOR A RADIATION SENSITIVE SEMICONDUCTOR COMPONENT

Solar concentrator for heat and electricity

Light converging-type solar photovoltaic apparatus

METHOD FOR TEMPERATURE COMPENSATION OF AN IMAGE SENSOR SENSITIVITY

Il s'agit d'un procédé de compensation en température de la sensibilité d'un détecteur d'image comportant des points photosensibles (1 à 6, R1 à R9) avec chacun une photodiode (Dp), reliés à des circuits de lecture (30a, 30b). Les points photosensibles sont partagés en des points photosensibles détecteurs (R1 à R9) capables de détecter une image lorsqu'ils ont exposés à une information porteuse de l'image et qu'ils sont sensibles à cette information, et en des points aveugles (1 à 6) protégés de l'information. Lorsque les points photosensibles (1 à 6, R1 à R9) sont portés à une température de référence (.theta.ref), on calcule un courant de fuite moyen (I.theta.ref) dans les photodiodes des points photosensibles aveugles (1 à 6), et on élabore une première moyenne (COD1) à partir des signaux délivrés par les points photosensibles aveugles (01 à 06) lors d'une opération de lecture, lorsque les points photosensibles (1 à 6, R1 à R9) sont portés à une température (.theta.) ambiante à déterminer ...

SEMICONDUCTOR APPARATUS AND METHOD OF ASSEMBLING THE SAME

In a semiconductor apparatus, a plurality of light-triggered type semiconductor devices, each having a groove for burying of an optical fiber for supplying an optical gate signal to a housing of the light-triggered type semiconductor device, are connected in series. Device cooling heat sinks, each having a flow path for circulating a coolant medium and a coolant inlet and a coolant outlet communicating with the flow path, are disposed on both sides of the housing of each light-triggered type semiconductor device. The light-triggered type semiconductor devices and the device cooling heat sinks are coupled into a single structure. An optical fiber insertion groove, which corresponds in position to the groove of the housing, is provided on a side surface of the device cooling heat sink, which contacts a groove (4)-side surface of the housing of the light-triggered type semiconductor device.

COOLING STRUCTURES AND PACKAGE MODULES FOR SEMICONDUCTORS

SZ9-90-016 COOLING STRUCTURES AND PACKAGE MODULES FOR SEMICONDUCTORS Cooling structure for direct heat transfer between an active layer of a chip in which electric elements are formed and a heat sink. The inventive cooling structure consists of a current/voltage supply level with metal structures and insulation spacers and/or layers, partly covered by an insulation layer and followed by a heat transfer structure. A heat transfer bridge in thermal connection to the heat transfer structure provides for heat flux between the inventive cooling structure and the heat sink.

МОДУЛЬ ОХЛАЖДЕНИЯ ЭЛЕКТРОННЫХ КОМПОНЕНТОВ

Изобретение относится к средствам охлаждения электронных компонентов радиоэлектронной аппаратуры и компьютерной техники. Модуль охлаждения теплонагруженных электронных компонентов содержит радиатор, термоэлектрический охлаждающий элемент Пельтье и соединенный с ним регулятор величины электрического тока. Радиатор изготовлен из пористого литого алюминия (ПЛА) и установлен на горячую сторону термоэлектрического охлаждающего элемента Пельтье. Изобретение обеспечивает упрощение конструкции охладительных модулей и повышения их надежности.

Фотоэлектрическая-тепловая панель

Изобретение относится к энергетике, а именно к фотоэлектрическим установкам, основанным на прямом преобразовании солнечной энергии в электрическую энергию посредством фотоэлементов, и к гелиотехнике, в частности к жидкостным нагревательным приборам. Фотоэлектрическая-тепловая панель состоит из фотоэлектрических элементов (1), закрепленных на прозрачной поверхности (2), электрически соединенных между собой в коробке (3) и расположенных на пластиковом листе (4), под которым установлена клеенка (5) с трубками из полимерного материала, распределителя холодной воды (7) и коллектора горячей воды (8). Между пластиковым листом (4) и клеенкой (5) расположен слой пасты (14) с высокой теплопроводностью. Под клеенкой (5) размещен слой эластичной теплоизоляции (15), за которым следует слой теплоизоляции (11), закрепленный на раме (10) защитным листом (22). Панель снабжена компенсатором (16) линейного расширения трубок из полимерного материала при изменении температуры окружающей среды, который имеет ...

Photoelectric module, depth obtaining assembly and electronic device

Snowmelt solar cell assembly structure

Superhigh multiplying-power focusing solar battery

One kind is used for laser receiving circuit of the temperature compensating circuit of the

Infrared photosensitive tube with wide temperature resistance

The invention discloses an infrared photosensitive tube with wide temperature resistance, belongs to the technical field of infrared photosensitive tubes, and aims to solve the problems that an existing common infrared photosensitive tube cannot be applied to a higher environment temperature, and a semiconductor refrigeration type infrared photosensitive tube is large in packaging size, high in power consumption and poor in high temperature resistance. The invention relates to an LED (light-emitting diode) light source, which comprises a packaging shell, a miniature refrigeration sheet and a photosensitive chip, the heating end of the miniature refrigeration sheet is welded with the inner bottom wall of the packaging shell, the photosensitive chip is adhered to the refrigeration end face of the miniature refrigeration sheet, a plurality of welding pins are arranged on the packaging shell in a penetrating manner, and the photosensitive chip is connected with the welding pins through electrode ...

COOLED PHOTODETECTOR

PERFECTIONNEMENTS AUX DISPOSITIFS CRYOSTATIQUES PHOTODETECTEURS

La présente invention se rapporte à un dispositif cryostatique permettant le refroidissement d'un élément photodétecteur 4 au moyen du doigt froid 1 d'une machine cryogénique 2. L'enceinte à vide primaire 12 formée par le doigt froid 1 et le vase Dewar renfermant l'élément photodétecteur 4 est fermée par un soufflet métallique 13 en extension assurant simultanément l'étanchéité de cette enceinte et le contact thermique dudit doigt froid. La surface extérieure du dispositif est rectifiée et maintient la position angulaire du photodétecteur 4 de façon précise au moyen d'un joint torique 18 souple relié par trois colonnes 20 à la machine cryostatique. Application aux ensembles cryostatiques photodétecteurs.

HYBRID INFRA-RED DETECTOR

COOLED CRYOSTAT DEVICE

DEVICE OF LIMITATION AND STANDARDIZATION OF the FIELD OF SIGHT OF MOSAICS OF DETECTORS IR

DETECTEUR DE RAYONS INFRAROUGES

DETECTEUR 13 DE RAYONS INFRAROUGES COMPRENANT UN ELEMENT DE DETECTION DE RAYONS INFRAROUGES 15 FABRIQUE DANS UNE TRANCHE OU PASTILLE QUI EST PRODUITE PAR CROISSANCE D'UN SEMI-CONDUCTEUR SENSIBLE AUX RAYONS INFRAROUGES SUR UN SUBSTRAT 14 A RESISTANCE ELEVEE, UNE PLAQUETTE DE MONTAGE METALLIQUE 16 MUNIE DE DEUX BORNES DE CONDUCTEURS ISOLEES L'UNE PAR RAPPORT A L'AUTRE, PLAQUETTE DE MONTAGE SUR LAQUELLE EST FIXE MECANIQUEMENT L'ELEMENT DE DETECTION DE RAYONS INFRAROUGES, UN RESERVOIR SOUS VIDE ADIABATIQUE APTE A RECEVOIR ET A REFROIDIR L'ELEMENT DE DETECTION DE RAYONS INFRAROUGES 15, RECIPIENT SUR LEQUEL EST FIXE MECANIQUEMENT LE SOUS-ENSEMBLE METALLIQUE. L'ELEMENT DE DETECTION DE RAYONS INFRAROUGES 15 ET LA PLAQUETTE DE MONTAGE METALLIQUE 16, LA PLAQUETTE DE MONTAGE METALLIQUE 16 ET LE RECIPIENT SOUS VIDE ADIABATIQUE, SONT RESPECTIVEMENT COLLES L'UN SUR L'AUTRE PAR BRASURE.

COLD FINGER AND DEVICE Of OBSERVATION COMPRISING SUCH a FINGER

L'invention concerne un doigt (1) froid d'un dispositif d'observation infrarouge comportant une pièce creuse (4) de forme allongée et apte à former une interface entre d'une part un détecteur infrarouge (2) à une de ses extrémités (6) et d'autre part un cryogénérateur (3) à l'autre de ses extrémités, caractérisé en ce qu'il comporte sur sa surface latérale extérieure au moins une ailette (10) de renfort. L'invention concerne également un dispositif d'observation infrarouge comportant un doigt selon l'invention.

OPTOELECTRONIC MODULE 3D IMAGING

PROCESS OF STARTING Of a COOLED INFRA-RED DETECTOR

Dans un détecteur infrarouge muni d'un photodétecteur (1), lors de l'abaissement de la température du photodétecteur jusqu'à sa température de fonctionnement, le photodétecteur (1) est polarisé en direct. Durant la polarisation en direct du photodétecteur (1), il y a injection d'un courant de porteurs majoritaires à travers le photodétecteur (1). Les porteurs majoritaires masquent une partie des défauts du photodétecteur (1). La phase d'acquisition est réalisée ensuite en polarisant le photodétecteur (1) en inverse.

DEVICE Of HERMETIC ENCAPSULATION OF COMPONENT HAVING TO BE PROTECTS FROM VERY FORCED

L'invention concerne un dispositif d'encapsulation hermétique de composant devant être protégé de toute contrainte. Le composant (5) est fixé sur un substrat (15) portant sur son autre face un élément de réglage de température (17) fixé par collage (16). Cet ensemble est disposé dans un boîtier en deux parties (1 1, 12) assemblées par collage (13) avec passage de liaisons optiques (6) et de connexions électriques (18, 142). Il est supporté par des protubérances (19) d'une partie (11) du boîtier. Sur l'autre partie (12) est collé un bloc (14) à interconnexions en trois dimensions formant l'électronique de régulation de température. Le bloc, le boîtier (11, 12) et une longueur minimum (L) des liaisons et connexions sont enrobés dans une couche de protection minérale (4'). L'invention s'applique notamment aux composants optoélectroniques et aux composants MEMS.

THE COOLER COMPRISING A COLD FINGER IMPROVED.

Le dispositif de détection comporte un doigt froid (4) qui réalise la connexion thermique entre un détecteur (2) monté sur une platine de refroidissement (5) et un système de refroidissement (3). Le doigt froid (4) comporte au moins une paroi latérale formée au moins partiellement par une zone en l'alliage métallique amorphe à base d'hafnium. Avantageusement, l'intégralité du doigt froid (4) est en l'alliage métallique amorphe à base d'hafnium.

코팅된 기판을 처리하기 위한 처리 박스, 장치 및 방법

... 본 발명은 한 면이 코팅된 기판을 처리하기 위한 수송 가능한 처리 박스로서, 제1 기판이 전체 면적에 걸쳐 지지되는 방식으로 제1 기판을 배치하고 기판의 코팅이 기부의 밑면에 공급되는 방사 에너지에 의해 열처리를 받을 수 있도록 구현되는 기부, 프레임, 프레임 상에 배치되는 커버, 기부와 커버 사이에 배열되고 제2 기판이 전체 면적에 걸쳐 지지되는 방식으로 제2 기판을 배치하기 위한 중간 요소를 포함하고, 커버는 기판의 코팅이 커버의 상면에 공급되는 방사선에 의해 열처리를 받을 수 있도록 구현되는 처리 박스에 관한 것이다. 본 발명은 또한 기판을 처리하기 위한 장치와 방법으로서, 처리 박스 또는 처리 캐리어가 장착되고 기판이 적재되어 처리 챔버로 수송되며 방사 에너지가 커버 상부 및/또는 기부 하부로부터 조사되는 장치와 방법에 관한 것이다. 사전 장착형 처리 캐리어의 경우에는, 처리 박스를 형성하기 위해 커버나 프레임에 연결된 커버가 처리 캐리어로 전달된다.

태양광 발전시스템 발전효율을 극대화하기 위한 히트싱크 패키지 장치

... 본 발명에서는 히트싱크 패키지 장치가 개시된다. 히트싱크 패키지 장치는, 다층 탄소섬유코어 패키지기판(Multi-layer carbon-core package substrate)을 활용하여 태양전지로부터 발생하는 열을 흡수방열하여 태양전지의 온도가 증가하는 것을 억제하여 발전효율이 떨어지는 것을 방지할 수 있다.

Heating device structure

The present invention relates to a heating device structure, having a thermally conductive member to match heat sink fins for heat dissipation of an electronic component, such that during the electronic component package process, multi-contact heating effect is achieved by the combination of the thermally conductive member and the fins, so as to quickly heat to achieve a bonding temperature, and influence by the heat sink fin structures can be prevented without resulting in a low efficiency of heating treatment.

Light source-integrated optical sensor

A light source-integrated optical sensor comprising: a light reception unit provided in a prescribed area upon a substrate; a light emission unit provided in a different area from the light reception unit on the substrate; a first light transmitting member provided upon the light reception unit so as to cover the light reception unit; a second light transmitting member provided upon the light emission unit so as to cover the light emission unit; a light shielding member provided between the first light transmitting member and the second light transmitting member; and a heat dissipating member in contact with the first light transmitting member, the second light transmitting member, and the light shielding member.

SOLAR CELL ASSEMBLY COMPRISING RIBBON WIRE HAVING EASY INTERCONNECTION AND SAGGING PREVENTION STRUCTURE, AND HIGH CONCENTRATION SOLAR CELL MODULE COMPRISING SAME

The present invention relates to a solar cell assembly and a high concentration solar cell module comprising same and, more particularly, to a solar cell assembly comprising a ribbon wire having easy interconnection and a sagging prevention structure, and a high concentration solar cell module comprising same.

COMBINATION OF SPECTROGRAPH BARRIER GAS, CARRIER GAS AND COOLING OF CCD

A method and a solution in a gas chromatography –UV spectrophotometry detector to efficiently increase the flow of photons through the spectrograph to a light sensitive element or elements and maintain functionality despite the absence of a physical window for the light to enter the spectrograph and or decrease the temperature of a photon collecting device like a CCD by expansion of gas in close proximity with the photon collecting device and or with thermal contact with the photon collecting and where the gas can be directed and used as a barrier gas flow in an opposite direction to the light out from the spectrograph and or where the gas can be directed to the entrance of a gas chromatography column as a carrier gas. One particular use is for detection of metabolic substances emanating from living tissues and in particular that can be found in exhaled air from humans and animals for detection of various diseases. Substances can be such as nitrogen oxide, urea, acetone, isoprene, carbon ...

AN ARTIFICIAL ENVIRONMENT MODULE

An artificial environment module comprising: an outer casing defining an inner environment; an inner casing located in the inner environment and containing an optic chip including at least a first portion defining a thermally-sensitive optic element; a package sensor for monitoring the temperature of the inner casing; a package temperature controller for heating and/or cooling the inner casing in dependence on the temperature sensed by the package sensor to minimise variations in the temperature with respect to changes in ambient temperature, and whose operation in response to changes in ambient temperature does not induce stress in the optic chip; an on-chip sensor for locally monitoring the temperature of the first portion of the optic chip; and at least one local temperature controller provided in thermal contact with the first portion of the optic chip for locally heating and/or cooling the first portion of the optic chip in dependence on the temperature measured by the on-chip sensor ...

Tiled hybrid array and method of forming

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably ≦10 μm. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

Image pickup element package having a supporting resin frame with a thermally conductive portion including electronic components, and associated image pickup apparatus

An image pickup element package according to an embodiment of the present technology includes a solid-state image pickup element, a circuit board, a translucent substrate, and a support. The solid-state image pickup element includes a light-receiving surface, and a back surface on a side opposite to the light-receiving surface. The circuit board supports the back surface of the solid-state image pickup element. The translucent substrate is opposed to the light-receiving surface. The support includes a resin frame portion and a conductor portion and is disposed between the circuit board and the translucent substrate. The resin frame portion includes a hollow portion that houses the solid-state image pickup element, and a fixation portion that is fixed to a casing portion of an image-pickup device. The conductor portion is integrally provided in the resin frame portion and provides thermal connection between the circuit board and the fixation portion.

OPTICAL APPARATUS AND METHOD FOR MANUFACTURING SAME

A downsized, highly reliable optical apparatus is stably and easily manufactured with high productivity. The optical apparatus includes: an optical device having a principal surface including an optical unit; a transparent member disposed facing the optical unit; a semiconductor device disposed above a back surface of the optical device and electrically connected to the optical device, the back surface being opposite the principal surface; and a resin member provided in a region adjacent to the optical device and the semiconductor device above a surface of the transparent member, the surface of the transparent member facing the optical device.

Device for the cooling of optoelectronic components and use of a flange joint used thereof

PCT No. PCT/DE87/00538 Sec. 371 Date Jul. 21, 1988 Sec. 102(e) Date Jul. 21, 1988 PCT Filed Nov. 20, 1987 PCT Pub. No. WO88/04107 PCT Pub. Date Jun. 2, 1988.In a device for the cooling of optoelectronic components (1) with an evacuated cooler housing mounted on a base, in which there are provided at least one holding device for components (1) which is thermally coupled with the cold station of a cooling unit through at least one flexible metal band (19), the housing of the cooling unit is for vibrational decoupling connected with the cooler housing and sealed against atmospheric pressure through ring-shaped rubber-elastic sealing means. The at least one holding device (8), through a flexible metal band (19) thermally coupled to a cold station, of a refrigeration unit, that protrudes into the cooler housing, comprises a retaining plate (17) which is arranged on one end of a thin-walled, essentially prismatic or cylindrical body from a thermally poorly conductive material, specifically epoxy ...

Optical probing system having reliable temperature control

An optical probe system for probing an electronic device includes a sample plate that can hold a target device comprising an integrated circuit, an optical objective system that can collect reflected or emitted light from the integrated circuit in the target device, and a temperature control chamber that can hold a fluid to control the temperature of the target device.

SELF-REGULATING HEATING DEVICE

A self regulating heating device includes a first layer made of an electrically insulating material. The first layer is thin and flexible. First and second buses spaced from each other are connected to the first layer. A resistive layer electrically connects the first and second buses. The resistive layer has a higher electrical resistance than the second layer. The resistive layer experiences a positive temperature coefficient (PTC) effect when heated. A solar active layer is connected to the first layer. The solar active layer is electrically connected to the first and second buses. The solar active layer converts light into electrical energy to apply a voltage across the first and second buses.

Thermoelectric Cooler Mount

An x-ray detector can be small and have efficient cooling. In one embodiment, the x-ray detector can comprise a thermoelectric cooler (TEC) with upper electrical connections, a support, a cap, and a silicon drift detector (SDD). A planar side of the support can be directly affixed to upper electrical connections of the TEC. The support can have a non-planar side, opposite of the planar side, with a raised structure. A bottom face of the cap can be affixed to the raised structure, forming a cavity between the cap and the non-planar side of the support. The SDD can be affixed to a top face of the cap. In another embodiment, the non-planar side of the support can face the TEC. In another embodiment, a PIN photodiode can be directly affixed to a plate and the plate directly affixed to upper electrical connections of the TEC. 1. An x-ray detector , comprising:a thermoelectric cooler (TEC) comprising electrical components for thermoelectric cooling, including upper electrical connections in a top region, the upper electrical connections being electrically conductive;a support carried by the TEC, the support including: a base with a planar side and a non-planar side opposite of the planar side, the planar side facing the TEC; and a raised structure on the non-planar side extending away from the base;a cap carried by the support, being electrically insulative, and having a top face and a bottom face opposite the top face;the bottom face of the cap affixed to the raised structure of the support, forming a cavity between the cap and the base of the support on the non-planar side of the support;a silicon drift detector (SDD) affixed to the top face of the cap; andthe planar side of the support directly affixed to the upper electrical connections, the support being a single, solid, electrically insulative structure extending across the upper electrical connections and located between the upper electrical connections and the cap.2. The x-ray detector of claim 1 , wherein the ...

Metamaterial Thermal Pixel for Limited Bandwidth Electromagnetic Sourcing and Detection

A metamaterial pixel providing an electromagnetic emitter and/or en electromagnetic detector operating within a limited bandwidth. The metamaterial pixel is comprised of plasmonic elements arranged within a periodic photonic crystal array providing an electromagnetic emitter and/or an electromagnetic detector adapted in embodiments for operation at selected bandwidths within the wavelength range of visible out to a millimeter. Performance of the pixel in applications is enhanced with nanowires structured to enhance phononic scattering providing a reduction in thermal conductivity. In embodiments multiple pixels are adapted to provide a spectrometer for analyzing thermal radiation or electromagnetic reflection from a remote media. In other embodiments emitter and detector pixels are adapted to provide an absorptive spectrophotometer. In other embodiments one or more of metamaterial pixels are adapted as the transmitter and/or receiver within a communication system. In a preferred embodiment ...

HEAT EXCHANGER APPARATUS AND METHODS OF MANUFACTURING CROSS REFERENCE

The invention provides systems and methods for cooling semiconductor devices, such as those provided in concentrated photovoltaic (CPV) systems using a cold plate. The invention also provides using a material, such as a ceramic, to form that cold plate that matches or nearly matches the coefficient of thermal expansion (CTE) of a photovoltaic cell. Additionally, the cooling system may include fluidic passageways through which a fluid may flow, which may result in a transfer of heat between the fluid and the solid structure.

REAL TIME RADIATION SENSOR CALIBRATION

One embodiment of the invention is directed to methods and apparatus for determining a variation of a calibration parameter of a pixel of the thermal sensor during operation of the imaging apparatus, after an initial calibration procedure. Another embodiment of the invention is directed to methods and apparatus for calculating a gain calibration parameter using first and second ambient temperature values and respective first and second resistance values for a pixel of a sensor. A further embodiment of the invention is directed to calculating an offset calibration parameter for at least one pixel using a gain of the at least one pixel between first and second times and an ambient temperature at a third time, wherein the pixel is exposed to both scene and ambient radiation at the third time.

COOLING PLATE FOR SOLAR PANEL, AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a cooling plate for a solar panel for cooling a solar panel comprises: a planar body positioned on the rear surface of a solar panel; and a fluid guide part comprising a plurality of flow paths for guiding a fluid for cooling the solar panel, between inlets formed on one side of the planar body and outlets formed on the other side of the planar body, wherein the surface of the planar body that comes into direct contact with a back sheet of the solar panel may be flat.

Устройство и способ автоматизированной очистки солнечной панели

Изобретение относится к системам автоматической очистки солнечных панелей. Устройство очистки солнечной панели, содержащее источник питания, соединенный с солнечной панелью, датчики контроля загрязнения и провода, расположенные на поверхности солнечной панели, отличающееся тем, что провода выполнены с возможностью колебания и переплетены друг с другом в виде решетки, установленной на поверхность солнечной панели, при этом в качестве источника питания используют источник переменного тока, а датчики контроля загрязнения выполнены в виде датчиков натяжения проводов, расположенных по всей внешней грани решетки из проводов. Также предложен способ автоматизированной очистки солнечных панелей. Изобретение обеспечивает эффективную очистку поверхности солнечной панели от снега, льда, мусора и других объектов, мешающих преобразованию солнечной энергии. 2 н.п. ф-лы, 2 ил.

ПРИЕМНИК ИЗЛУЧЕНИЯ

Изобретение относится к фоточувствительным приборам, предназначенным для обнаружения электромагнитного излучения, в частности к охлаждаемым полупроводниковым приемникам излучения, например к кремниевым приемникам с засветкой с обратной стороны. Техническим результатом при использовании предлагаемого изобретения является расширение технических возможностей приемника, в том числе обеспечение надежности работы прибора в криостатах тепловизионных приборов. Сущность: в приемнике излучения, содержащем образующие герметичную полость основание, рамку и снабженный электрическими выводами кристалл с фоточувствительной ИС, основание состоит из двух или нескольких частей, к одной из которых прикреплены рамка и электрические выводы, а остальные соединены с этой частью герметично. В частном случае выполнения приемника одна из составных частей основания, не соединенных с рамкой и электрическими выводами, расположена в его центре и выполнена в виде круга. При этом часть основания, к которой прикреплены ...

МНОГОКАНАЛЬНОЕ ОХЛАЖДАЕМОЕ ФОТОПРИЕМНОЕ УСТРОЙСТВО

Изобретение относится к приборам, предназначенным для обнаружения теплового излучения, в частности к охлаждаемым полупроводниковым фотоприемным устройствам, и может быть использовано в тепловизионных системах, устанавливаемых на стационарных или подвижных объектах. Сущность: устройство включает в себя фотоприемник, микрокриогенную систему охлаждения, которая содержит охладитель, выполненный с возможностью размещения в упомянутом фотоприемнике, газовую криогенную машину и многоэлементный фоторезистор с фоточувствительными элементами, держатель которого выполнен с возможностью охлаждения указанного многоэлементного фоторезистора, баллон, по меньшей мере, с одним окном, прозрачным для инфракрасного излучения, блок предварительного усиления и блок питания. Многоэлементный фоторезистор размещен в герметичной газонаполненной полости фотоприемника. Фотоприемник включает в себя обойму баллона, выполненную из материала с коэффициентом температурного расширения, по меньшей мере, близким коэффициенту ...

Verzerrungsarme, schnell kühlbare Plattform für den Bildebenenarray in IR-Detektor-Dewaranordnungen.

Optoelektronische Bauelementanordnung und Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementanordnungen

Es wird eine optoelektronische Bauelementanordnung (100) mit einer Vielzahl von nebeneinander angeordneten optoelektronischen Halbleiterbauelementen (60) und einem Umhüllungskörper (81) angegeben. Hierbei ist vorgesehen, dass – jedes der optoelektronischen Halbleiterbauelemente (60) einen keramischen Trägerkörper (19) und einen auf einer Oberseite des keramischen Trägerkörpers angeordneten Halbleiterchip (50) mit einem zur Erzeugung und/oder zum Empfangen von Strahlung vorgesehenen Halbleiterkörper (54) aufweist, – der Umhüllungskörper (81) jeden der keramischen Trägerkörper (19) der optoelektronischen Halbleiterbauelemente zumindest in einer lateralen Richtung bereichsweise umgibt und benachbarte keramische Trägerkörper (19) miteinander verbindet, und – eine Unterseite des keramischen Trägerkörpers (19) jeweils von dem Halbleiterchip (50) elektrisch isoliert ist.

Optoelektronisches Halbleiter-Bauelement

Strahlung aussendendes und/oder empfangendes Halbleiter-Bauelement, bei dem: – ein Strahlung aussendender und/oder empfangender Halbleiterchip (1) auf einem Chipträgerteil (2) eines Leiterrahmens befestigt ist, – der Halbleiterchip (1) und mindestens ein Teilbereich des Chipträgerteiles (2) von einer Umhüllung (3) umgeben ist, – der Leiterrahmen externe elektrische Anschlüsse für den Halbleiterchip (1) aufweist, die aus der Umhüllung (3) herausragen, – am Chipträgerteil (2) in dem Bereich, in dem der Halbleiterchip (1) befestigt ist, eine Wanne (4) ausgebildet ist, deren Innenfläche (5) derart ausgebildet ist, daß sie einen Reflektor für die vom Halbleiterchip (1) ausgesandte und/oder empfangene Strahlung bildet, und – der Chipträgerteil (2) wenigstens einen externen Anschluss (11) aufweist, der seitlich aus der Umhüllung (3) herausragt, dadurch gekennzeichnet, daß eine Bodenwandung des Chipträgerteiles (2) zusätzlich an einer Unterseite der Umhüllung (3) aus dieser herausragt, derart, ...

Thermo-electric cooler

Thermo-electric cooler

A thermo-electric cooler comprises a pair of parallel electrically insulating and thermally conducting plates 4, 17, 21 and an array of thermo-electric elements 6 arranged between the plates. A pair of contact pads are provided on an upper surface of the lower plate 4. The upper plate 17, 21 is suitable for optical and/or electro-optical components to be mounted thereon. The upper plate 17,21 has a structure 20, 22 providing rigidity to the upper plate 17, 21. The structure may be a flange 20 projecting in a direction perpendicular to the plane of the upper plate 17. Alternatively, the structure may be one or more rods embedded in the upper plate 21. The alignment of optical and/or electro-optical devices mounted on the upper plate is thus maintained by the rigid upper plate 17, 21.

Thermo-electric cooler

Apparatus for cooling photo-detectors

... 1,026,139. Cooling photo-electric cells; semiconductor devices. HITACHI Ltd. Aug. 7, 1963 [Aug. 8, 1962], No. 31190/63. Headings H1D and H1K. The photo-sensitive element of a photoelectric cell is mounted on the inner surface of an evacuated glass vessel and is cooled by a semi-conductor Peltier cooling device located opposite the element and outside the vessel, from which it is separated by a layer of soft metal and a mass of good thermal conductor, the whole being surrounded by thermally insulating material. A photo-conductive lead sulphide film 3 is coated on the inside of envelope 1, and is separated from a bismuth telluride Peltier cooling device 6 by a layer 4 of Wood's metal or indium, and a block 5 of copper or aluminium, the whole being thermally insulated by a surrounding layer 7 of foamed polyethylene or polyether. Photo-tubes are also referred to.

INFRARED RAY DETECTOR

Фотоприемное устройство

Полезная модель относится к области инфракрасной техники и касается фотоприемного устройства. Фотоприемное устройство включает в себя закрепленную в корпусе с входным окном и заполненную аккумулирующим холод материалом накопительную камеру, на торце которой расположен приемник излучения, а в отверстие основания вмонтирована трубка подачи хладагента. На торцевой поверхности накопительной камеры, противоположной той, на которой закреплен приемник излучения, выполнено одно или несколько дренажных отверстий. Технический результат заключается в уменьшении времени выхода на рабочий режим и увеличении времени автономной работы. 1 з.п. ф-лы. 1 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 170 234 U1 (51) МПК H01L 31/024 (2014.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21)(22) Заявка: 2016143063, 02.11.2016 (24) Дата начала отсчета срока действия патента: 02.11.2016 18.04.2017 (73) Патентообладатель(и): Открытое акционерное общество "Швабе-Фотосистемы" (RU) Приоритет(ы): (22) Дата подачи заявки: 02.11.2016 Адрес для переписки: 117545, Москва, Днепропетровский пр-д, 4А, стр. 3А, ОАО "Швабе-Фотосистемы", Управление стратегического планирования и информационных технологий подготовка командира взвода ПЗРК 9К38 "Игла". Учебное пособие. Издательство Томского политехнического университета, 2011 г., стр. 22. RU 160522 U1, 20.03.2016. US 4791298 A1, 13.12.1988. JP H07302919 A, 14.11.1995. U 1 1 7 0 2 3 4 R U (57) Формула полезной модели 1. Фотоприемное устройство, содержащее закрепленную в корпусе с входным окном и заполненную материалом, аккумулирующим холод, накопительную камеру, на торце которой расположен приемник излучения, а в отверстие основания вмонтирована трубка подачи хладагента, отличающееся тем, что на торцевой поверхности накопительной камеры, противоположной той, на которой закреплен приемник излучения, выполнено одно или несколько дренажных отверстий. 2. Фотоприемное устройство по п. 1, ...

Комбинированная система глубокого охлаждения фотоприемных устройств

Полезная модель относится к области криогенной техники и криогенных холодильных машин, работающих по обратному циклу Стерлинга, может быть использована для охлаждения приемников инфракрасного излучения, лазеров, элементов радиоэлектронной аппаратуры и других объектов, выполняющих исследования в космосе.Комбинированная система глубокого охлаждения фотоприемных устройств (СГО ФПУ) содержит две микрокриогенные системы (МКС) по циклу Стерлинга хладопроизводительностью 10 Вт каждая, тепловые трубы от МКС к криостату, криостат с плавящимся веществом, закрепленный через теплоизолирующие втулки с герметичным корпусом, медные хладопроводы от криостата к фотоприемным устройствам, при этом две МКС циклически работают поочередно. В качестве криогенного вещества использован Аргон.Обеспечено продление общего ресурса активной работы аппаратуры системы глубокого охлаждения фотоприемных устройств порядка 7-10 лет, при этом уменьшено механическое (вибрационное) и электромагнитное воздействие, создаваемое при работе МКС, на работу аппаратуры космического аппарата. 1 з.п. ф-лы, фиг. 1 РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 170 671 U1 (51) МПК F25B 9/14 (2006.01) G12B 15/00 (2006.01) H01L 31/024 (2014.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21)(22) Заявка: 2016147373, 02.12.2016 (24) Дата начала отсчета срока действия патента: 02.12.2016 03.05.2017 Приоритет(ы): (22) Дата подачи заявки: 02.12.2016 Адрес для переписки: 117342, Москва, ул. Введенского, вл. 8, АО "КБточмаш им. А.Э. Нудельмана" (73) Патентообладатель(и): Акционерное общество "Конструкторское Бюро точного машиностроения имени А.Э. Нудельмана" (RU) (56) Список документов, цитированных в отчете о поиске: RU 2206027 C2, 10.06.2003. RU U 1 R U 1 7 0 6 7 1 (54) Комбинированная система глубокого охлаждения фотоприемных устройств (57) Формула полезной модели 1. Комбинированная система глубокого охлаждения фотоприемных устройств, содержащая герметичный ...

Solar cell element, and solar cell module including the same

It is aimed to provide a solar cell element and a solar cell module capable of reducing an output drop in a case where a crack occurs in the solar cell element. In order to achieve this object, the solar cell element includes a substrate body including a photoelectric conversion part, a plurality of first electrodes located at intervals on one main surface of the substrate body, and a crack guiding part located in a region positioned between a pair of adjacent first electrodes among the plurality of first electrodes when the substrate body is viewed or viewed through in plan view from the one main surface side and configured to guide a position of a crack occurring in the substrate body upon application of a load to the substrate body.

Method of fabricating epitaxial structures

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

Reducing thermal gradients to improve thermopile performance

With infrared (IR) sensors, repeatability and accuracy can become an issue when there are thermal gradients between the sensor and an underlying printed circuit board (PCB). Conventionally, a large thermal mass is included in the sensor packaging to reduce the effect from such thermal gradients, but this increase costs and size of the sensor. Here, however, a PCB is provided that includes an isothermal cage included therein that generally ensures that the temperature of the underlying PCB and sensor are about the same by including structural features (namely, the isothermal cage) that generally ensure that the thermal time constant for a path from a heat source to the thermopile (which is within the sensor) is approximately the same as thermal time constants for paths through the PCB.

Direct readout focal plane array

According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

FLIP-CHIP BONDED IMAGER DIE

An image sensor includes an imager die, a circuit board, and an optical layer. The circuit board is flip-chip bonded to the imager die. The optical layer is adhered to the circuit board and includes a first portion configured to refract light differently than a second portion. Both the first portion and the second portion are integrally formed with the optical layer. 1. An image sensor comprising:an imager die;a circuit board flip-chip bonded to the imager die;an optical layer adhered to the circuit board and having a first portion configured to refract light differently than a second portion, wherein both the first portion and the second portion are integrally formed with the optical layer.2. The image sensor of claim 1 , wherein the first portion is optically aligned with the imager die.3. The image sensor of claim 1 , further comprising a lens disposed on the optical layer and optically aligned with the first portion.4. The image sensor of claim 3 , wherein the lens is disposed on the optical layer via an ultraviolet cure bond.5. The image sensor of claim 1 , further comprising an adhesive layer disposed between the optical layer on the circuit board.6. The image sensor of claim 1 , further comprising a heat sink disposed on the imager die.7. The image sensor of claim 1 , wherein the circuit board includes a flexible circuit board.8. The image sensor of claim 1 , wherein the circuit board has a thickness of approximately 0.5 mil to 2 mil9. The image sensor of claim 1 , wherein the circuit board includes a trace having a thickness of approximately 0.2 mil to 2 mil.10. An image sensor comprising:an imager die;a circuit board flip-chip bonded to the imager die;a stiffener adhered to the circuit board;an optical layer adhered to the stiffener and having a first portion configured to refract light differently than a second portion, wherein both the first portion and the second portion are integrally formed with the optical layer.11. The image sensor of claim 10 , ...

INFARED SENSOR

The infrared sensor includes: an infrared sensor chip in which a plurality of pixel portions each including a temperature-sensitive portion formed of a thermopile is disposed in an array on one surface side of a semiconductor substrate; and an IC chip that processes an output signal of the infrared sensor chip. A package includes a package main body on which the infrared sensor chip and the IC chip are mounted to be arranged side-by-side, and a package cover that has a lens transmitting infrared rays and is hermetically bonded to the package main body. The package is provided therein with a cover member that includes a window hole through which infrared rays pass into the infrared sensor chip and equalizes amounts of temperature change of hot junctions and cold junctions among the pixel portions, the temperature change resulting from heating of the IC chip. 110-. (canceled)11. An infrared sensor comprising:an infrared sensor chip in which a plurality of pixel portions is disposed in an array on one surface side of a semiconductor substrate, each of said pixel portions including a temperature-sensitive portion formed of a thermopile;an IC chip configured to process an output signal of said infrared sensor chip; anda package in which said infrared sensor chip and said IC chip are accommodated,wherein said package includes: a package main body on which said infrared sensor chip and said IC chip are mounted to be arranged side-by-side; and a package cover which is hermetically bonded to said package main body so as to surround said infrared sensor chip and said IC chip together with said package main body, said package cover having a function of transmitting infrared rays to be detected by said infrared sensor chip, andsaid package is provided therein with a cover member which includes a window hole through which infrared rays pass into said infrared sensor chip, said cover member equalizing, among the pixel portions, the amounts of temperature change of hot junctions ...

DEVICE HAVING AN AVALANCHE PHOTO DIODE AND A METHOD FOR SENSING PHOTONS

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region. 1. A semiconductor device , comprising an avalanche photodiode (APD) , the APD comprises:a first doped region of a first polarity;a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region;a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; anda second doped region of the second polarity, the second doped region is spaced apart from the first doped region.2. The device according to claim 1 , wherein the first polarity is positive and the second polarity is negative.3. The device according to claim 1 , wherein the first polarity is negative and the second polarity is positive.4. The device according to wherein the buried guard ring has a non-uniform doping profile.5. The device according to claim 4 , wherein the non-uniform doping profile is arranged to increase a uniformity of an electrical field formed across the p-n junction when the APD is biased with a bias voltage that facilitates a multiplication of a number of photo-carriers in the depletion region.6. The device according to claim 4 , wherein at least one portion of the doping profile changes as a function of a distance from edges of the positive doped region.7. The device according to claim 4 , wherein the non-uniform doping profile is set to ...

Photoelectric conversion element

A photoelectric conversion element ( 1 ) of the present invention includes: a photoelectric conversion layer ( 2 ); and a photonic crystal provided inside the photoelectric conversion layer ( 2 ) to provide a photonic band gap, the photonic crystal being designed such that nanorods ( 30 ) whose refraction index is smaller than that of a medium of the photoelectric conversion layer ( 2 ) are provided periodically inside the photoelectric conversion layer ( 2 ), and there are provided defects ( 31 ) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is λ, the nanorods ( 30 ) are provided two-dimensionally with a pitch of not less than λ/7 and not more than λ/2, and a coefficient κ V indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient α of absorption of light by the photoelectric conversion layer ( 2 ).

PHOTOELECTRIC CONVERSION MEMBER

It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member of this invention includes a first electrode layer , a power generation laminate , and a second electrode layer formed on the power generation laminate through a nickel layer 1. A photoelectric conversion member comprising:a photoelectric conversion element for converting incident light energy into electrical energy; anda heat dissipation portion provided to the photoelectric conversion element,wherein the photoelectric conversion element comprises a passivation layer provided at a portion in contact with the heat dissipation portion and made of a material containing SiCN, andwherein the heat dissipation portion comprises a heat dissipation structure which contains 40 to 750 parts by mass of an expanded graphite powder (E) per 100 parts by mass of at least one type of polymer (S).2. The photoelectric conversion member according to claim 1 , wherein the heat dissipation structure contains a flame retardant thermally conductive inorganic compound (B).3. The photoelectric conversion member according to claim 2 , wherein claim 2 , in the heat dissipation structure claim 2 , the flame retardant thermally conductive inorganic compound (B) is aluminum hydroxide.4. The photoelectric conversion member according to claim 2 , wherein claim 2 , in the heat dissipation structure claim 2 , the flame retardant thermally conductive inorganic compound (B) is contained at 400 parts or less by mass per 100 parts by mass of the polymer (S).5. The photoelectric conversion member according to claim 1 , wherein the polymer (S) contains a (meth)acrylic acid ester polymer (A) as a main component.6. The photoelectric conversion member according to claim 5 , wherein the (meth)acrylic acid ester polymer (A) contains a polymer obtained by polymerizing a ( ...

Reducing thermal gradients to improve thermopile performance

With infrared (IR) sensors, repeatability and accuracy can become an issue when there are thermal gradients between the sensor and an underlying printed circuit board (PCB). Conventionally, a large thermal mass is included in the sensor packaging to reduce the effect from such thermal gradients, but this increase costs and size of the sensor. Here, however, a PCB is provided that includes an isothermal cage included therein that generally ensures that the temperature of the underlying PCB and sensor are about the same by including structural features (namely, the isothermal cage) that generally ensure that the thermal time constant for a path from a heat source to the thermopile (which is within the sensor) is approximately the same as thermal time constants for paths through the PCB.

COMBINED HEAT AND POWER SOLAR SYSTEM

An apparatus is disclosed for converting incident light to electrical energy and heat. the apparatus includes an evacuated enclosure having at least a portion for admitting incident light; and an absorber member disposed at least partially in said enclosure to receive incident light. The absorber includes a selective surface which converts a portion of the incident light to heat. The selective surface comprises a photovoltaic layer which converts a portion of the incident light to electrical energy. In some embodiments, the absorber includes an elongated inner tube having an outer surface including the selective surface. 1. An apparatus for converting incident light to electrical energy and heat , the apparatus comprising:an evacuated enclosure having at least a portion for admitting incident light; andan absorber member disposed at least partially in said enclosure to receive incident light, whereinthe absorber comprises a selective surface which converts a portion of the incident light to heat, andthe selective surface comprises a photovoltaic layer which converts a portion of the incident light to electrical energy.2. The apparatus of claim 1 , wherein the incident light is solar light.3. The apparatus of claim 1 , wherein the absorber comprises an elongated inner tube having an outer surface comprising the selective surface.4. That apparatus of claim 3 , wherein the elongated inner tube comprises a rigid material tube claim 3 , and the photovoltaic layer is formed on an outer surface of the tube.5. The apparatus of claim 4 , wherein the rigid material comprises at least one selected from the list consisting of: glass claim 4 , ceramic claim 4 , aluminosilicate glass claim 4 , borosilicate glass claim 4 , flint glass claim 4 , fluoride glass claim 4 , fused silica glass claim 4 , silicate glass claim 4 , soda lime glass claim 4 , and quartz glass.6. The apparatus of claim 3 , wherein the evacuated enclosure comprises an elongated outer tube disposed about the ...

SEMICONDUCTOR APPLICATION INSTALLATION ADAPTED WITH A TEMPERATURE EQUALIZATION SYSTEM

The primary purpose of the present invention is to provide an fluid circulating installation adapted with a temperature equalization system and fluid transmission duct disposed in a heat carrier existing in solid or liquid state in the nature where presents comparatively larger and more reliable heat carrying capacity. The fluid passes through the solid or gas state semiconductor application installation to regulate the semiconductor application installation for temperature equalization, and flows back to the heat equalization installation disposed in the natural heat carrier of heat for the heat equalization installation providing good heat conduction in the natural heat carrier to provide the operation of temperature equalization regulating function on the backflow of the fluid. 110311032600. A lighting device with temperature equalization , said lighting device including at least one of a light emitting diode (LED) with a heat dissipation structure , gas state lamp structure () , and a photovoltaic device () with a heat dissipation structure , said at least one of the light emitting diode , gas state lamp structure , and photovoltaic device being situated on a support () that extends from above a surface of the earth to below a surface of the earth , comprising:{'b': 102', '600', '101, 'a heat equalizer () at a lower end of the support () made of a thermally conductive material in thermal contact with a natural heat carrier ();'}{'b': 105', '205', '600', '104', '204', '102, 'at least a fluid transmission duct ( and/or ) that extends through said support () for carrying a fluid ( or ) to and from the heat equalizer (); and'}{'b': 106', '206', '104', '204', '105', '205, 'at least one pump ( and/or ) for pumping the fluid ( or ) through the fluid transmission duct ( and/or ).'}2110106206. A lighting device as claimed in claim 1 , further comprising a control unit () for controlling operation of the at least one pump ( and/or ) to cause a temperature of the lighting ...

Hybrid Solar Cell Integrating Photovoltaic and Thermoelectric Cell Elements for High Efficiency and Longevity

Methods, systems and apparatus for a solar cell integrating photovoltaic and thermoelectric cell elements to form a hybrid solar cell having increased efficiency and longevity by combining operation of the photovoltaic and thermoelectric elements in at least three different modes of operation to increase electrical output per unit of panel area and to increase cell life, improve performance, and provide operational benefits under different environmental conditions. 1. A hybrid solar cell comprising:a photovoltaic cell having an upper and a lower contact plate with the photovoltaic elements layered between the upper and lower contact plates; anda thermoelectric cell having an upper and a lower contact plate with the thermoelectric elements layered between the upper and lower contact plates;an electrically insulating layer between the lower contact plate of the photovoltaic cell and the upper contact plate of the thermoelectric cell to couple the thermoelectric cell with the photovoltaic cell; andan electrical connection between the photovoltaic cell and the thermoelectric electric cell to configure the hybrid solar cell to cool and heat the photovoltaic cell.2. The hybrid solar cell of claim 1 , wherein the photovoltaic cell comprises:a first layer for allowing solar light to enter the photovoltaic cell;a anti-reflective layer adjacent to the first layer;a n-type semiconductor layer;a p-type semiconductor layer adjacent to the n-type semiconductor layer;a first conductive layer sandwiched between the anti-reflective layer and one of the n-type and p-type semiconductor elements; anda second conductive layer sandwiched between the anti-reflective layer and an opposite one of the n-type and p-type semiconductor elements.3. The hybrid solar cell of claim 1 , wherein the thermoelectric cell comprises: a p-type semiconductor layer adjacent to the n-type semiconductor layer;', 'a first connector layer sandwiched between the electrically insulating layer and one of the n- ...

PHOTOELECTRIC CONVERSION DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate. 1. A photoelectric conversion device , comprising:a first semiconductor substrate which includes a photoelectric conversion unit for generating a signal charge in accordance with an incident light; anda second semiconductor substrate which includes a signal processing unit for processing an electrical signal on basis of the signal charge, the signal processing unit being situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate, and a multilayer film including a plurality of insulator layers being provided between the first semiconductor substrate and the second semiconductor substrate,wherein a thickness of the second semiconductor substrate is smaller than 500 micrometers, and a thickness of the second semiconductor substrate is greater than a distance between the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.2. The photoelectric conversion device according to claim 1 , wherein the thickness of the second ...

Direct readout focal plane array

An image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Substrate for a photovoltaic cell

The subject of the invention is a substrate for photovoltaic cell comprising at least one sheet of float glass provided on a face of at least one electrode, characterized in that said glass has a chemical composition comprising the following constituents, in a weight content that varies within the limits defined below: SiO 2 60-70%  Al 2 O 3 7-11% MgO  1-5% CaO 6-10% Na 2 O 10-16%  K 2 O   0-4%.

HEATED RADIATION SENSOR

A heater () for a sensor () comprises a substrate (), an electrically conductive heating structure () on the substrate (), and one or more connecting portions () for electrically connecting the heating structure () to one or more outside terminals () of the sensor (). The substrate () is rigid and can comprise ceramics, preferably alumina ceramics. 1. A heater for a sensor , comprising:a substrate;an electrically conductive heating structure on the substrate; andone or more connecting portions for electrically connecting the heating structure to one or more outside terminals of the sensor.2. The heater of claim 1 , adapted to heat the sensor to a predetermined temperature or temperature range claim 1 , which may be a predetermined amount below an expected temperature of a radiation source and/or a predetermined amount above an expected ambient temperature of the sensor.3. The heater of claim 1 , comprising a control circuit for controlling the temperature of the heater.4. The heater of claim 3 , comprising a circuit terminal adapted to receive a temperature signal from the inside of the sensor claim 3 , and/or comprising a temperature sensor.5. The heater of claim 1 , wherein the conductive structure is an electrically resistive heater of a resistance that is constant over temperature or that is rising with rising temperature.6. The heater of claim 1 , wherein the conductive structure comprises a printed structure.7. The sensor of claim 1 , wherein the conductive structure comprises a trimmable structure.8. The heater of claim 1 , wherein the substrate comprises one or more holes respectively adapted to accommodate an external terminal of the sensor.9. The heater of claim 8 , wherein the internal wall of one or more of the holes comprises a metallization connected to a circuit element and/or to the conductive structure on the substrate.10. A heater for a sensor claim 8 , comprising:a substrate;an electrically conductive heating structure on the substrate; andone or ...

COOLED OPTICAL LIGHT GUIDE FOR LOW-LEVEL LIGHT DETECTORS AND METHOD OF TEMPERATURE STABILIZATION FOR IMAGING DETECTORS

A cooled optical light guide is provided having a conduit having a translucent top and a translucent bottom wherein at least a portion of the translucent top of the conduit is in alignment above at least a portion of the translucent bottom of the conduit. A fluid medium that is preferably cooled flows through the conduit. The optical light guide is placed between a scintillator array and an array detector. The temperature of the light that is emitted by the scintillator array is stabilized, and preferably cooled, as it passes through the translucent bottom of the conduit and through the translucent top of the conduit for detection by the array detector. A method of temperature stabilization for photomultiplier based detectors is disclosed. 1. A device comprising:an imaging detection module having a scintillator array capable of emitting light and an array detector capable of detecting the emitted light from said scintillator array;an optical light guide that is in juxtaposition to and disposed between said scintillator array and said array detector, wherein said optical light guide comprising a conduit having a first open end, a second open end, and a middle section, wherein said second open end of said conduit is located opposite of said first open end of said conduit, and wherein said middle section of said conduit is disposed between and in communication with said first open end of said conduit and said second open end of said conduit, and wherein said conduit has a translucent or transparent top extending for at least a portion of the length of said conduit forming a first optical window, and wherein said conduit has a translucent or transparent bottom extending for at least a portion of the length of said conduit forming a second optical window, and wherein a passageway is established between said first open end of said conduit, said middle section of said conduit, and said second open end of said conduit, and wherein at least a portion of said translucent or ...

Thermal Management Within an LED Assembly

This invention is directed to a method for applying a thermal management composition between an LED mounted circuit board and a heat sink, comprising the steps of; (a) applying a deposit of a thermal management composition onto either a second surface of the LED mounted circuit board or onto a surface of a heat sink, through a deposition tool the deposition tool having at least one aperture () where the at least one aperture has a perimeter surrounded by sidewalls, where the sidewalls have heights, where the heights are reduced around at least a portion () of the perimeter of the apertures on the deposition tool as compared to the average height of the deposition tool and (b) securing the LED mounted circuit board and the heat sink. 1. A method for applying a thermal management composition between an LED mounted circuit board and a heat sink , where the LED mounted circuit board comprises a substrate having a first surface with at least one LED mounted thereto and a second surface opposite the first surface , the method comprising the steps of;(a) applying a deposit of a thermal management composition onto either the second surface of the LED mounted circuit board or onto a surface of the heat sink, through a deposition tool having at least one aperture, where the at least one aperture has a perimeter surrounded by sidewalls, where the sidewalls have heights, where the heights are reduced around at least a portion of the perimeter of the apertures on the deposition tool as compared to the average height of the deposition tool and(b) securing the LED mounted circuit board and the heat sink wherein the thermal management composition resides between the second surface of the LED mounted circuit board and the surface of the heat sink.2. The method of claim 1 , where the deposition tool is a down step stencil and step (a) is performed by stencil printing.3. The method of claim 1 , where the deposition tool is a screen having plurality of apertures claim 1 , each aperture ...

Devices and methods

A device comprising an arrangement of device materials and a layer comprising a material with heat-dissipating properties disposed over at least a portion thereof is disclosed. The device can further include an interleave layer disposed between the top surface of the arrangement of device materials and the layer comprising a material with heat-dissipating properties. A barrier layer may further be included between the arrangement of device materials and the layer comprising a material with heat-dissipating properties. Methods are also disclosed. In certain embodiments, a device includes quantum confined semiconductor nanoparticles.

Autonomous winter solar panel

Disclosed herein is an autonomous solar panel for use in winter conditions. The panel includes at least one energy transfer member associated with the solar panel. A sensor is in communication with the energy transfer member. A power supply is connected to the energy transfer member. A network interconnects the energy transfer member, the sensor, and the power supply, and is configured so that when the sensor senses an accumulation of winter precipitation on the solar panel, a portion of stored power in the power supply activates the energy transfer member and the winter precipitation is removed from the solar panel.

DEVICE HAVING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

The invention relates to a device (), comprising at least one optoelectronic semiconductor component () and a substrate (), on which the semiconductor component is arranged, wherein an insulating layer () is adjacent to a lateral surface () that bounds the semiconductor component; a contact track () is arranged on a radiation passage surface of the semiconductor component and is connected to an electrically conductive manner to the semiconductor component; the contact track extends beyond the lateral surface of the semiconductor component and is arranged on the insulating layer; and the contact track is relieved with respect to a thermomechanical load occurring perpendicularly to the lateral surface. 1. Device having at least one optoelectronic semiconductor component and one carrier , on which the semiconductor component is arranged , whereinan insulation layer adjoins a side face delimiting the semiconductor component,a contact track is arranged on a radiation passage face of the semiconductor component and connected electrically conductively with the semiconductor component;the contact track extends beyond the side face of the semiconductor component and is arranged on the insulation layer; andthe contact track is relieved with regard to thermo-mechanical stress arising perpendicular to the side face.2. Device according to claim 1 ,wherein the contact track has a ductility of at least 10%.3. Device according to claim 1 ,wherein the contact track is of multilayer construction and directly adjoins the insulation layer, and wherein the contact track is free of nickel.4. Device according to claim 1 ,wherein the contact track is structured in the lateral direction in such a way that a spring effect arises perpendicular to the side face.5. Device according to claim 4 ,{'b': '61', 'wherein the contact track has a serpentine structure ().'}6. Device according to claim 1 ,wherein the contact track has a thickness of at most 30 μm.7. Device according to claim 1 ,wherein ...

OPTICAL MODULE AND METHOD OF MANUFACTURING OPTICAL MODULE

An optical module includes an optical semiconductor device and a stem including a lead terminal configured to perform at least one of transmitting an electric signal to the optical semiconductor device or transmitting an electric signal output from the optical semiconductor device. The optical module also includes a substrate having a ground layer, a first opening through which the lead terminal passes, and a connecting portion configured to electrically connect the stem and the ground layer. The connecting portion is formed on one of an edge portion of the substrate and a surface of the substrate on a side on which the substrate is arranged on the stem. 1. An optical module , comprising:an optical semiconductor device;a stem comprising a lead terminal configured to perform at least one of transmitting an electric signal to the optical semiconductor device or transmitting an electric signal output from the optical semiconductor device; anda substrate comprising a ground layer, a first opening through which the lead terminal passes, and a connecting portion configured to electrically connect the stem and the ground layer,wherein the connecting portion is formed on one of an edge portion of the substrate and a surface of the substrate on a side on which the substrate is arranged on the stem.2. The optical module according to claim 1 , wherein the connecting portion formed on the edge portion of the substrate comprises an electrode portion formed extending from the ground layer in a notch of the substrate.3. The optical module according to claim 1 , wherein the connecting portion formed on the surface of the substrate on the side on which the substrate is arranged on the stem is formed so that the ground layer is exposed at a part of an outer side of a region of the substrate at which the substrate and the stem oppose each other.4. The optical module according to claim 1 ,wherein the stem further comprises a ground pin extending from a surface of the stem on a side on ...

STRUCTURE AND METHOD FOR HYBRID OPTICAL PACKAGE WITH GLASS TOP COVER

An optical package containing optical sensor/detector pairs co-housed with a non-optical sensor and processes for fabricating the optical package are described herein. Traditional package structures require the use of clear mold compounds to protect the sensitive dies, but such compounds degrade with time and temperature. The optical package described herein uses a special glass top cover that is transparent in the entire electro-magnetic spectral region required by the contained dies. 1. An optical package , comprising:a package substrate;an application specific integrated circuit die disposed on the package substrate, the application specific integrated circuit die including a detector;at least one non-optical sensor die disposed on the package substrate;a pre-molded polymer panel unit cell disposed on the package substrate, the pre-molded polymer panel unit cell including at least one cavity and at least one sidewall, the at least one sidewall configured to restrict cross talk between the application specific integrated circuit and the at least one non-optical sensor die; anda glass cover disposed on the pre-molded polymer panel unit cell.2. The optical package of claim 1 , wherein the package substrate includes at least one vent hole extending through the package substrate.3. The optical package of claim 1 , wherein the package substrate comprises a laminate.4. The optical package of claim 1 , wherein the package substrate comprises a ceramic.5. The optical package of claim 1 , further comprising:at least one pedestal, where at least one of the application specific integrated circuit die or the at least one non-optical sensor die is disposed on the at least one pedestal.6. The optical package of claim 5 , wherein the at least one pedestal includes a spacer die.7. The optical package of claim 1 , further comprising:a first adhesive film element that is disposed between the pre-molded polymer panel unit cell and the package substrate.8. The optical package of ...

SINTERED COMPACT AND LIGHT EMITTING DEVICE

A sintered compact includes a wavelength conversion region containing a phosphor material that performs wavelength conversion of primary light and emits secondary light, and a holding region provided to be in contact with the wavelength conversion region. The wavelength conversion region and the holding region are integrated. 1. A sintered compact comprising:a wavelength conversion region containing a phosphor material that performs wavelength conversion of primary light and emits secondary light; anda holding region provided to be in contact with the wavelength conversion region, whereinthe wavelength conversion region and the holding region are integrated.2. The sintered compact according to claim 1 , whereinthe holding region has higher thermal conductivity than that of the wavelength conversion region.3. The sintered compact according to claim 1 , whereinthe holding region has a structure in which a minute second ceramic material is dispersed inside a first ceramic material and the first ceramic material and the second ceramic material are intertwined with each other three-dimensionally.4. The sintered compact according to claim 3 , whereinthe first ceramic material has higher thermal conductivity than that of the wavelength conversion region.5. The sintered compact according to claim 3 , whereina refractive index difference between the first ceramic material and the second ceramic material is 0.2 or larger.6. A light emitting device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the sintered compact according to ; and'}a light emitting element that emits the primary light. The disclosure of Japanese Patent Application No. 2016-132803 filed on Jul. 4, 2016 including the specification, drawings and abstract is incorporated herein by reference in its entirety.The disclosure relates to a sintered compact and a light emitting device, and especially to a sintered compact and a light emitting device, which perform wavelength conversion of primary light ...

High Efficiency Tandem Solar Cells and A Method for Fabricating Same

Solar cell structures comprising a plurality of solar cells, wherein each solar cell is separated from adjacent solar cell via a tunnel junction and/or a resonant tunneling structure (RTS), are described. Solar cells are implemented on Ge, Si, GaN, sapphire, and glass substrates. Each of the plurality of solar cells is at least partially constructed from a cell material which harnesses photons having energies in a predetermined energy range. In one embodiment each solar cell comprises of at least two sub-cells. It also describes a nano-patterned region/layer to implement high efficiency tandem/multi-junction solar cells that reduces dislocation density due to mismatch in lattice constants in the case of single crystalline and/or polycrystalline solar cells. Finally, solar structure could be used as light-emitting diodes when biased in forward biasing mode. The mode of operation could be determined by a programmed microprocessor. 1. A solar cell structure , comprising:A plurality of solar cells with at least two cells,a first solar cell,a second solar cell,wherein each of the solar cells include at least one of a p-n homojunction and a p-n heterojunction, andwherein the solar cell structure comprises a tunnel junction and a resonant tunneling structure between two adjacent solar cells, andwherein a first tunnel junction and a first resonant tunneling structure are located between the first solar cell and the second solar cell, andwherein the first solar cell is comprised of first p-type layer and a second n-type layer, and wherein the first p-type layer and the second n-type layer are selected one from single crystalline, poly-crystalline and nano-crystalline Si, and wherein first p-type layer serves as the substrate to support the plurality of cells, andwherein second solar cell comprises a third p-layer and a fourth n-layer, and wherein third p-layer is selected one from CdTe, ZnCdTe, CdGalnSe, and wherein the fourth n-layer is selected from CdS, ZnCdS, CdGalnSe, ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film. 1. A semiconductor device , comprising:a base;an insulating layer formed over the base;a first optical waveguide formed over the insulating layer;a first semiconductor portion formed over the insulating layer;a second semiconductor portion formed over the first semiconductor portion;a first interlayer insulating film formed over the insulating layer such that the first interlayer insulating film covers the first optical waveguide, the first semiconductor portion, and the second semiconductor portion;a heater portion formed over the first interlayer insulating film and over the first optical waveguide;a first opening formed in the first interlayer insulating film, the first opening reaching a portion of the first semiconductor portion which is uncovered with the second semiconductor portion;a second opening formed in the first interlayer insulating film, the second opening reaching ...

PRINTED CIRCUIT BOARD ASSEMBLY FORMING ENHANCED FINGERPRINT MODULE

A Printed Circuit Board Assembly (PCBA) forming an enhanced fingerprint module is disclosed. The PCBA includes a Printed Circuit Board (PCB), an image sensing chip, at least one electrode and a protection layer. An opening in a first insulation layer and a second insulation layer of the PCB together form a sensor portion so that the image sensing chip can be packaged in the opening. Thus, the thickness of the enhanced fingerprint module can be thinner than other fingerprint modules provided by the conventional package methods. 1. A Printed Circuit Board Assembly (PCBA) forming an enhanced fingerprint module , comprising: a first insulation layer having an opening formed therein;', 'a first electrically conductive layer, forming a first specific circuit on a portion of a top surface of the first insulation layer and forming a plurality of contacts;', 'a second electrically conductive layer, forming a second specific circuit on a portion of a bottom surface of the first insulation layer;', 'a second insulation layer, formed below the second electrically conductive layer, wherein the second specific circuit is formed on a portion of a top surface of the second insulation layer; and', 'a third electrically conductive layer, forming a third specific circuit on a portion of a bottom surface of the second insulation layer;, 'a Printed Circuit Board (PCB), comprisingan image sensing chip, having a sensing area and a plurality of bonding pads on a top surface thereof, fixed in the opening with the sensing area facing external environment and each bonding pad connected to one corresponding contact;at least one electrode, formed close-to or around the opening in the first electrically conductive layer, for providing an excitation signal to an object which has a detected surface being detected by the image sensing chip; anda protection layer, formed completely over the at least one electrode and the top surface of the image sensing chip, and formed partially or completely over ...

SEMICONDUCTOR DEVICE AND IMAGING APPARATUS

[Object] To reduce the size of a semiconductor device having a semiconductor chip mounted thereon while reducing the influence of thermal conduction to the semiconductor chip in the semiconductor device. [Solution] In the semiconductor device, a first package is provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged. A second package is provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner. A connection portion electrically connects the first wiring and the second wiring. 1. A semiconductor device comprising:a first package provided with a first substrate under which a semiconductor chip configured to output a signal and a first wiring electrically connected to the semiconductor chip are arranged;a second package provided with a second substrate above which a processing circuit configured to process the output signal, a second wiring electrically connected to the processing circuit, and an encapsulant configured to seal the processing circuit are arranged, the semiconductor chip and the encapsulant being arranged to face each other in a non-contact manner; anda connection portion configured to electrically connect the first wiring and the second wiring.2. The semiconductor device according to claim 1 ,wherein the connection portion includes solder.3. The semiconductor device according to claim 2 ,wherein the connection portion is provided with a spacer used to define a space between the first substrate and the second substrate.4. The semiconductor device according to claim 2 , further comprising:a second connection portion electrically connected to the ...

OPTOELECTRONIC COMPONENT, OPTOELECTRONIC MODULE, AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially. 115.-. (canceled)16. An optoelectronic component comprising:a radiation side via which electromagnetic radiation is coupled in or out during operation,a contact side opposite the radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, anda semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs the electromagnetic radiation during normal operation, whereinthe contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component,the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element,the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), andin plan view of the contact side the cooling element covers one or both ...

Compact sensor module

Various embodiments of a compact sensor module are disclosed herein. The sensor module can include a stiffener and a sensor substrate wrapped around a side of the stiffener. A sensor die may mounted on the sensor substrate. A processor substrate may be coupled to the sensor substrate. A processor die may be mounted on the processor substrate and may be in electrical communication with the sensor die.

INFRARED DETECTION ELEMENT

An infrared detection element includes a substrate, a lower electrode layer, a pyroelectric layer, and an upper electrode layer. The lower electrode layer is fixed to the substrate, and the pyroelectric layer is formed on the lower electrode layer. The upper electrode layer is formed on pyroelectric layer. The lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the pyroelectric layer. 1. An infrared detection element comprising:a substrate;a lower electrode layer fixed to the substrate;a pyroelectric layer formed on the lower electrode layer; andan upper electrode layer formed on the pyroelectric layer,wherein the lower electrode layer contains pores therein and has a larger thermal expansion coefficient than the pyroelectric layer.2. The infrared detection element according to claim 1 , wherein a diameter of the pores is larger from the pyroelectric layer toward the substrate.3. The infrared detection element according to claim 1 , wherein the substrate has a smaller thermal expansion coefficient than the pyroelectric layer.4. The infrared detection element according to claim 1 ,wherein the lower electrode layer includes a first lower electrode layer and a second lower electrode layer disposed in this order from the substrate, andwherein the first lower electrode layer contains pores and has a larger thermal expansion coefficient than the pyroelectric layer.5. The infrared detection element according to claim 4 , wherein a diameter of the pores is larger in sequence from the pyroelectric layer toward the substrate.6. The infrared detection element according to claim 4 , wherein the second lower electrode layer has a larger thermal expansion coefficient than the first lower electrode layer.7. The infrared detection element according to claim 6 , wherein the first lower electrode layer and the second lower electrode layer are made of the same material.8. The infrared detection element according to claim 4 , wherein a ...

SEMICONDUCTOR CHIP

A semiconductor chip includes an electrically insulating layer including a first opening and a second opening, an electrically conductive first connection point, and an electrically conductive second connection point, wherein a carrier mechanically connects to a semiconductor body, the active region electrically connects to a first conductor body and a second conductor body, the electrically insulating layer covers the carrier on a side thereof facing away from the semiconductor body, the first connection point electrically connects to the first conductor body through the first opening, the second connection point electrically connects to the second conductor body through the second opening, the first conductor body is at a first distance from a second conductor body, the first connection point is at a second distance from the second connection point, and the first distance is less than the second distance. 114-. (canceled)15. A semiconductor chip comprising:a semiconductor body comprising an active region,a carrier comprising a first conductor body, a second conductor body and a shaped body,an electrically insulating layer comprising a first opening and a second opening,an electrically conductive first connection point, andan electrically conductive second connection point, whereinthe carrier mechanically connects to the semiconductor body,the active region electrically connects to the first conductor body and the second conductor body,the electrically insulating layer covers the carrier on the side thereof facing away from the semiconductor body,the first connection point electrically connects to the first conductor body through the first opening,the second connection point electrically connects to the second conductor body through the second opening,the first conductor body is at a first distance from a second conductor body,the first connection point is at a second distance from the second connection point, andthe first distance is less than the second distance. ...

Method of Mounting an Electrical Component on a Base Part

A method of mounting an electrical component on a base part having an inclined support surface is provided, in which method a first wedge surface of a wedge element is arranged on the support surface and a lateral force is exerted on the wedge element so that the first wedge surface moves on the support surface until a second wedge surface of the wedge element remote from the support surface reaches a desired position, and wherein the electrical component is arranged on the second wedge surface. In this respect, a first fastening element of the wedge element is fixed to the base part and the lateral force is afterward no longer exerted. 1. A method of mounting an electrical component on a base part , said base part having an inclined support surface in which method a first wedge surface of a wedge element is arranged on the support surface and a lateral force is exerted on the wedge element so that the first wedge surface moves on the support surface until a second wedge surface of the wedge element remote from the support surface reaches a desired position , wherein the electrical component is arranged on the second wedge surface , and wherein a first fastening element of the wedge element is fixed to the base part and the lateral force is afterward no longer exerted.2. The method in accordance with claim 1 ,wherein the electrical component has a circuit board.3. The method in accordance with claim 1 ,wherein the base part is configured as a housing part.4. The method in accordance with claim 1 ,wherein at least one of the wedge element and the base part comprises thermally conductive material.5. The method in accordance with claim 1 ,wherein the wedge element lies directly on the base part.6. The method in accordance with claim 1 ,wherein thermally conductive material is arranged between the electrical component and the second wedge surface.7. The method in accordance with claim 1 ,wherein the first fastening element forms a connection perpendicular to the support ...

PROXIMITY SENSOR

A proximity sensor includes a circuit board; a light-emitting element and a light-receiving element on the circuit board; a light barrier; molding portions; and a transparent board disposed on the molding portions and configured to form an air gap with the light-receiving element. The light-receiving element includes: a substrate having a light sensing area and a temperature sensing area; a first input electrode and a first output electrode which are aligned in the light sensing area and apart from each other with a first delay gap therebetween; a sensing film covering at least some portions of the first input electrode and the first output electrode; and a second input electrode and a second output electrode which are aligned in the temperature sensing area and apart from each other with a second delay gap therebetween. The second delay gap is exposed to air. 1. A proximity sensor comprising:a circuit board having a first bonding pad area and a second bonding pad area;a light-emitting element and a light-receiving element which are apart from each other and mounted on the circuit board;a light barrier disposed between the light-emitting element and the light-receiving element;molding portions surrounding the light-emitting element and the light-receiving element; anda transparent board disposed on the molding portions and configured to form an air gap with the light-receiving element,wherein the light-receiving element comprises:a substrate having a light sensing area and a temperature sensing area and comprising a piezo electric material;a first input electrode and a first output electrode which are aligned in the light sensing area and apart from each other with a first delay gap between the first input electrode and the first output electrode;a sensing film overlapping the first delay gap and covering at least some portions of the first input electrode and the first output electrode; anda second input electrode and a second output electrode which are aligned in ...

ROOF SUPPORT STRUCTURE FOR SOLAR PANEL MODULE

A support structure for a vehicle roof panel includes a solar panel module. The solar panel module is disposed within an opening defined by an outer periphery of a support structure. The solar panel module includes a first part configured to slide underneath a second part containing a solar array adhered to a flange. The flange has a plurality of ribs extending across the solar array. The ribs have a V-shaped cross-section to support the solar panel module within the second part. 1. A vehicle comprising:a roof panel defining an opening;a support structure attached to the roof panel and disposed within the opening, the support structure including first and second sections, at least two leg portions, and a divider disposed between the leg portions and separating the first and second sections, the first section being defined between the leg portions and the divider, and the second section being defined between the leg portions and the divider disposed adjacent the first section; anda solar panel module disposed within the first or second section, the solar panel module including a solar array adhered, via an electrical discharge film, to a plate having a plurality of ribs extending across an area of the solar array, the ribs having a V-shaped cross-section spaced throughout the area to support the solar panel module within the support structure.2. The vehicle of further comprising a housing attached around the solar panel module and including first and second seals disposed in a normal manner to inhibit moisture to contact the plate and solar array.3. The vehicle of claim 1 , wherein the V-shaped cross-section of the ribs is further configured to absorb heat from the solar panel module.4. The vehicle of further comprising a cover disposed within and underneath the housing claim 2 , opposite the plate to sandwich the solar array between the cover and the plate within the housing.5. The vehicle of further comprising first and second brackets disposed on opposite ends of ...

PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT

A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp Подробнее

Method Of Making A Sensor Package With Cooling Feature

A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light impinging on the first surface, and first contact pads each exposed at both the first and second surfaces and electrically coupled to at least one of the photodetectors. A second substrate comprises opposing first and second surfaces, electrical circuits, a second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits, and a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate. The first substrate second surface is mounted to the second substrate first surface such that each of the first contact pads is electrically coupled to at least one of the second contact pads. 1. A method of forming a sensor device , comprising: opposing first and second surfaces,', 'a plurality of photodetectors configured to receive light impinging on the first surface, and', 'a plurality of first contact pads each extending between the first and second surfaces and electrically coupled to at least one of the plurality of photodetectors;, 'providing a first substrate of semiconductor material that comprises opposing first and second surfaces,', 'electrical circuits,', 'a plurality of second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits,, 'providing a second substrate that comprisesmounting the second surface of the first substrate to the first surface of the second substrate such that each of the first contact pads is electrically coupled to at least one of the second contact pads; andforming a plurality of cooling channels as first trenches into the second surface of the second substrate but not reaching the first surface of the second substrate ...

Sensor Package With Cooling Feature

A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light impinging on the first surface, and first contact pads each exposed at both the first and second surfaces and electrically coupled to at least one of the photodetectors. A second substrate comprises opposing first and second surfaces, electrical circuits, a second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits, and a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate. The first substrate second surface is mounted to the second substrate first surface such that each of the first contact pads is electrically coupled to at least one of the second contact pads. 1. A sensor device , comprising: opposing first and second surfaces,', 'a plurality of photodetectors configured to receive light impinging on the first surface, and', 'a plurality of first contact pads each electrically coupled to at least one of the plurality of photodetectors;, 'a first substrate of semiconductor material comprising opposing first and second surfaces,', 'electrical circuits,', 'a plurality of second contact pads each electrically coupled to at least one of the electrical circuits, and', 'a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate,, 'a second substrate comprisingwherein the second surface of the first substrate is mounted to the first surface of the second substrate; opposing first and second surfaces,', 'a plurality of third contact pads disposed at the first surface of the third substrate, and', 'a plurality of fourth contact pads disposed at the first surface of the third substrate,', 'wherein the ...

Image Sensor Device and Method

A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration. 1. A method of manufacturing a semiconductor device , the method comprising:forming a pixel within an image sensor;bonding the image sensor to a semiconductor device, the semiconductor device comprising a substrate and a heat sink at least partially located in a first metallization layer between the pixel and the substrate; andforming a thermal via extending through the image sensor and in thermal connection with the heat sink.2. The method of claim 1 , further comprising placing the image sensor and the semiconductor device into a ceramic leadless chip carrier.3. The method of claim 2 , further comprising forming an external connection between the thermal via and the ceramic leadless chip carrier.4. The method of claim 3 , wherein the forming the external connection further comprises forming a wire bond between the thermal via and the ceramic leadless chip carrier.5. The method of claim 1 , further comprising placing the image sensor and the semiconductor device into a flip chip package.6. The method of claim 5 , wherein the placing the image sensor and the semiconductor device into the flip chip package further comprises forming gold stud bumps on the image sensor.7. The method of claim 1 , further comprising placing the image sensor and the semiconductor device within a reconstructed wafer chip on board package.8. A method of manufacturing a semiconductor device claim 1 , the method comprising:forming active devices on a first semiconductor substrate;forming a metallization layer and a heat sink over the ...

ELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN ELECTRONIC COMPONENT

Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical protection element is electrically conductively connected to the third electrically conductive structure and the first or second electrically conductive structure. 1. Electronic component witha support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged,a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier,a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier,a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in whichthe first electrically conductive structure is electrically conductively connected to the first electrical contact point,the second electrically conductive structure is electrically conductively connected to the second electrical contact point,the third electrically conductive ...

Semiconductor chip having tampering feature

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

MULTIPLE TRANSFER ASSEMBLY PROCESS

This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance. 1. A method for manufacturing a plurality of photovoltaic cells , the method comprising the steps of:obtaining a plurality of photovoltaic cells, placed at a first distance from each other;attaching a stretching material to the plurality of photovoltaic cells; andstretching the stretching material such that the plurality of photovoltaic cells results at a second distance from each other, wherein the second distance is greater that the first distance.2. The method of claim 1 , further comprising the step of:positioning the plurality of photovoltaic cells onto a target substrate, while the cells are still attached to the stretching material, after stretching the stretching material.3. The method of claim 2 , further comprising the steps of:assembling the plurality of photovoltaic cells to the target substrate after the step of positioning the plurality of photovoltaic cells onto the target substrate; andremoving stretched material from the plurality of photovoltaic cells after the step of assembling the plurality of photovoltaic cells to the target substrate.4. The method of claim 2 , further comprising the steps of:removing the stretched material from the plurality of photovoltaic cells, after the step of positioning the plurality of photovoltaic cells onto the target substrate; andassembling the plurality of photovoltaic cells to the target substrate, after the step of removing the stretched material from the plurality of photovoltaic cells.5. The method of claim 2 , wherein the plurality of photovoltaic ...

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

A semiconductor package including a substrate, a memory chip on the substrate, a mold layer on the substrate to cover a side surface of the memory chip, an image sensor chip on the memory chip and the mold layer, and a connection terminal between and electrically connecting the memory chip to the image sensor chip may be provided. 1. A semiconductor package , comprising:a substrate;a memory chip on the substrate;a mold layer on the substrate, the mold layer covering a side surface of the memory chip;an image sensor chip on the memory chip and the mold layer; anda connection terminal between the memory chip and the image sensor chip, the connection terminal electrically connecting the memory chip to the image sensor chip.2. The semiconductor package of claim 1 , further comprising:a re-distribution pattern between the image sensor chip and the connection terminal, the re-distribution pattern extending between the mold layer and the image sensor chip, the re-distribution pattern electrically connected to the connection terminal.3. The semiconductor package of claim 1 , further comprising:a dummy terminal between the memory chip and the image sensor chip.4. The semiconductor package of claim 3 , wherein the dummy terminal overlaps pixels of the image sensor chip claim 3 , when viewed in a plan view.5. The semiconductor package of claim 3 , further comprising:a re-distribution layer on a bottom surface of the image sensor chip, the re-distribution layer including a metal pattern, the metal pattern being in physical contact with the image sensor chip, the metal pattern electrically connected to the dummy terminal and electrically disconnected from the connection terminal.6. The semiconductor package of claim 1 , wherein the mold layer has a side surface that is coplanar with a side surface of the image sensor chip.7. The semiconductor package of claim 1 , wherein the image sensor chip comprises:a logic chip including a first circuit layer; anda sensing chip on the logic ...

Exponential Model Based Uncooled Infrared Focal Plane Array Readout Circuit

The present disclosure relates to an exponential model based uncooled infrared focal plane array readout circuit, including: a first microbolometer unit and a second microbolometer unit, for obtaining a detection signal and a reference signal; a conversion unit, connected with the first and second microbolometer units, and configured for converting the detection signal and reference signal to obtain a linear detection signal and linear reference signal; a subtraction unit, connected with the conversion unit, and configured for calculating a difference between the detection signal and the reference ratio signal to obtain a difference signal; and an integration unit, connected to the subtraction unit, and configured for integrating the difference signal to obtain an electrical signal for characterizing the infrared light signal of the to-be-detected object. 1. An exponential model based uncooled infrared focal plane array readout circuit , comprising:a first microbolometer unit, configured for detecting an infrared light signal of a to-be-detected object to obtain a detected radiation signal;a second microbolometer unit, configured for obtaining a reference signal according to a resistance thereof;a conversion unit, respectively connected to the first microbolometer unit and the second microbolometer unit, and configured for generating a detection signal according to the detected radiation signal and generating a reference ratio signal according to the reference signal;a subtraction unit, connected to the conversion unit, and configured for calculating a difference between the detection signal and the reference ratio signal to obtain a difference signal; andan integration unit, connected to the subtraction unit, and configured for integrating the difference signal to obtain an electrical signal for characterizing the infrared light signal of the to-be-detected object.2. The exponential model based uncooled infrared focal plane array readout circuit according to claim ...

MODULE, METHOD FOR MANUFACTURING MODULE, AND ELECTRONIC DEVICE

[Object] To suppress the heat rising of a module in which an image sensor is installed and fixed on a substrate more than before, make the time until the temperature of the module reaches a prescribed temperature later than before, and thereby make the available time of the module longer than before. [Solution] Provided is a module including: an organic substrate; an image sensor mounted on an upper surface of the organic substrate; a wire connecting the image sensor and the organic substrate; and a wire sealing unit adhered to a side surface of the image sensor while encompassing the wire. A thermal conductivity of the wire sealing unit is higher than a thermal conductivity of the organic substrate. 1. A module comprising:an organic substrate;an image sensor mounted on an upper surface of the organic substrate;a wire connecting the image sensor and the organic substrate; anda wire sealing unit adhered to a side surface of the image sensor while encompassing the wire,wherein a thermal conductivity of the wire sealing unit is higher than a thermal conductivity of the organic substrate.2. The module according to claim 1 ,wherein a frame unit made of a resin and formed by mold forming is provided on the organic substrate to surround the image sensor, andthe wire sealing unit is a resin put and solidified on the organic substrate between the image sensor and the frame unit.3. The module according to claim 1 ,wherein a frame unit made of a resin and produced by mold forming on the organic substrate to surround the image sensor constitutes a wire sealing unit adhered to a side surface of the image sensor while encompassing the wire.4. The module according to claim 2 ,wherein a lens unit is mounted on the frame unit.5. The module according to claim 1 ,wherein the thermal conductivity of the wire sealing unit is 0.5 W/m·K or more, andthe thermal conductivity of the organic substrate is 0.2 to 0.3 W/m·K.6. The module according to claim 1 ,wherein a resin of the wire sealing ...

INTEGRATED FILTER OPTICAL PACKAGE

An integrated filter optical package including an ambient light sensor that incorporates an infrared (IR) filter in an integrated circuit (IC) stacked-die configuration is provided. The integrated filter optical package incorporates an infrared (IR) coated glass layer to filter out or block IR light while allowing visible (ambient) light to pass through to a light sensitive die having a light sensor. The ambient light sensor detects an amount of visible light that passes through the IR coated glass layer and adjusts a brightness or intensity of a display screen on an electronic device accordingly so that the display screen is readable. 1. A light sensor comprising:an epoxy molding compound having a mounting surface and a non-mounting surface;electrical terminations disposed in a lead frame around a perimeter of the epoxy molding compound adjacent to the mounting surface;a light sensitive die embedded in the epoxy molding compound;wire bonds embedded in the epoxy molding compound to electrically connect the light sensitive die to the electrical terminations;an optical film attached to the light sensitive die, the optical film allowing visible light to pass through to the light sensitive die; anda glass infrared (IR) filter attached to the optical film and embedded in the epoxy molding compound where a first surface of the glass filter is exposed to ambient light.2. The light sensor of further comprising a thermal die pad embedded in the epoxy molding compound adjacent to the mounting surface of the epoxy molding compound and a die attach film attached to the thermal die pad claim 1 , wherein the light sensitive die is attached to the thermal die pad via the die attach film.3. The light sensor of claim 2 , wherein the glass filter is comprised of a homogenous material.4. The light sensor of claim 3 , wherein the glass infrared (IR) filter has a footprint smaller than a footprint of the light sensitive die claim 3 , and wherein the optical film is a die attach film.5. ...

High accuracy module assembly process

The present invention relates to an assembling method for a base plate of a concentrated photovoltaic module comprising the steps of: assembling a heat sink on the base plate; and assembling a photovoltaic cell assembly on the heat sink after the heat sink has been assembled on the base plate.

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal diffusion of a rapid temperature change, with the use of a high-speed temperature rising and falling apparatus without using ion implantation into the silicon substrate. 1. A method of manufacturing a semiconductor device having a photodiode of a p-n junction in a surface of a silicon substrate , the method comprising:removing an oxide film formed on the surface of the silicon substrate;depositing a first oxide containing phosphorus on the surface of the silicon substrate;forming the first oxide only in a desired part;forming a first n-type diffusion region by performing a first annealing on the first oxide formed only in the desired part at a high temperature of 1,000° C. or more for 3 minutes or less, to thereby thermally diffuse the phosphorus contained in the first oxide into the surface of the silicon substrate;depositing a second oxide containing phosphorus on the surface of the silicon substrate after removing the first oxide formed only in the desired part;forming the second oxide so that the second oxide is connected to the first n-type diffusion region; andforming a second n-type diffusion region by performing a second annealing on the second oxide which is formed to connect to the first n-type diffusion region, at a temperature equal to or higher than that of the first annealing for a time equal to or shorter than that of the first annealing, to thereby thermally diffuse the phosphorus contained in the second oxide into the surface of the silicon substrate.2. A method of manufacturing a semiconductor device according to claim 1 , wherein each of the first oxide and the second oxide ...

Image capture device

An image capture device including: a light-receiving element; a casing enclosing the light-receiving element; a space temperature sensor measuring a temperature of a space, which is part of an inside portion of the casing; a light-receiving-element temperature sensor measuring a temperature of the light-receiving element; cooling means for cooling the light-receiving element so that the temperature of the light-receiving element will be a predetermined temperature; temperature-information storage means for storing information concerning an association between a temperature of the space and a preset temperature, the information being used for maintaining the temperature of the light-receiving element at a constant value; and control means for obtaining, on the basis of the temperature of the space, the preset temperature corresponding to the temperature of the space by referring to the temperature-information storage means, and for controlling the cooling means so that the temperature of the light-receiving element will be the preset temperature.

INFRARED SENSOR STRUCTURE

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process. 1. An infrared sensor structure , comprises a cantilever switch array , the cantilever switch array comprises cantilever switches , and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam , vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other , when the cantilever beams are deformed towards the switches and connect to the switches , the switches turn on; wherein , deformations of different cantilever beams produced by absorbing infrared signal are different from each other , the intensity of the infrared signal can be quantified by number of the switches turned on.2. The infrared sensor structure of claim 1 , wherein the switch is a metal switch or a CMOS switch claim 1 , and the end of the cantilever beam comprises a metal for controlling the switch.3. The infrared sensor structure of claim 1 , wherein the cantilever switch array is built on a semiconductor substrate claim 1 , the switch is set on the surface of the semiconductor substrate claim 1 , and each cantilever ...

CHIP PACKAGE MODULE AND PACKAGE SUBSTRATE

A chip package module and a package substrate are disclosed herein. The package substrate provides a double-sided wiring structure, wherein a circuit layer is electrically connected with at least one chip, and wherein a heat-conduction wiring layer is extended to the underneath layer so as to increase the heat-conduction area and enhance the heat-dissipation efficiency. The present invention can apply to light emitting diode chips or solar chips to overcome the heat-dissipation problem. 1. A chip package module comprisinga metallic substrate;a first heat-conduction and electric-insulation layer disposed over said metallic substrate;a heat-conduction wiring layer disposed over said first heat-conduction and electric-insulation layer;a second heat-conduction and electric-insulation layer disposed over said heat-conduction wiring layer;a circuit layer disposed over said second heat-conduction and electric-insulation layer and electrically connected with said heat-conduction wiring layer;at least one chip installed on said circuit layer in a flip-chip way; andan encapsulant covering said chip and a portion of said circuit layer.2. The chip package module according to claim 1 , wherein said encapsulant further covers a portion of said first heat-conduction and electric-insulation layer.3. The chip package module according to further comprising a heat-dissipation element arranged below said metallic substrate.4. The chip package module according to claim 1 , wherein said second heat-conduction and electric-insulation layer has at least two openings for vertical electric connection of said circuit layer and said heat-conduction wiring layer.5. The chip package module according to claim 1 , wherein said chip is a light-emitting diode chip or a solar chip.6. The chip package module according to claim 1 , wherein area of said heat-conduction wiring layer is larger than area of said circuit layer.7. The chip package module according to claim l further comprising an electric- ...

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode. A control system is configured to trigger the reverse bias voltage source to increase the reverse bias voltage. 1. A system for reducing dark current in a photodiode , comprising:a heater configured to heat a photodiode above room temperature;a reverse bias voltage source configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode;a dark current sensor configured to measure the dark current generated by the photodiode; anda control system configured to trigger the reverse bias voltage source to increase the reverse bias voltage until the measured dark current stabilizes to maximize a dark current reduction after the photodiode returns to room temperature.2. The system of claim 1 , wherein the heater is configured to heat the photodiode to about 175° C.3. The system of claim 1 , wherein the photodiode is formed from a germanium layer above a silicon substrate.4. The system of claim 3 , wherein the germanium layer comprises a horizontally arranged n-type doped region claim 3 , intrinsic region claim 3 , and p-type doped region and wherein the germanium layer is encapsulated in an insulating layer except for a hole through which the germanium layer contacts the silicon substrate.5. The system of claim 1 , wherein the heater comprises one of an ambient heater and an on-chip heater.6. A system for reducing dark current in a photodiode claim 1 , comprising:a heater configured to heat a photodiode above room temperature;a reverse bias voltage source configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode;a control system configured to trigger the reverse bias voltage source to ...

SPACE SOLAR CELL PANEL WITH BLOCKING DIODES

A solar cell assembly or sub-array for space applications that comprises a string of series connected space qualified solar cells, one of the solar cells being a final solar cell of the string of solar cells. The final solar cell has at least one oblique cut corner. The solar cell assembly further comprises a contact member connected to the final solar cell through a blocking diode, positioned in correspondence with the space provided by the space provided by the oblique cut corner. 1. A solar cell assembly for space applications comprising a plurality of space qualified solar cells optimized for operation at AM0 , wherein each solar cell of the plurality of solar cells comprises a ceria doped borosilicate glass supporting member that is 3 to 6 mils in thickness attached with a transparent adhesive to an adjacent solar cell , the assembly comprising:a first string of series connected first solar cells, one of said first solar cells being a final first solar cell of the first string, said final first solar cell having a bottom metal layer covering the entire lower side of the final first solar cell and at least a first oblique cut corner and a second oblique cut corner; and a first contact member electrically connected to said metal layer of said final first solar cell (i) through a first blocking diode electrically connected in series, wherein a first connection of said first blocking diode is electrically connected by welding through a first interconnect composed of a silver-plated nickel-cobalt ferrous alloy material to the first contact member, and a second connection of said first blocking diode is directly electrically connected by welding to a first connector that is also directly electrically connected by welding to said metal layer of said final first solar cell at said first oblique cut corner, with the first blocking diode being positioned proximate said first oblique cut corner; and (ii) through a second blocking diode electrically connected in series, ...

Split Photodetector for Differential Receivers

An optical cavity is formed to have a circuitous configuration. The optical cavity is configured to receive light coupled from a waveguide. At least two photodetector sections are formed over respective portions of the optical cavity. Each of the at least two photodetector sections is configured to detect light present within the optical cavity. Each of the at least two photodetector sections is configured for separate and independent control.

CIRCUIT CHIP MODULE HEAT DISSIPATION STRUCTURE

A circuit chip module heat dissipation structure includes a circuit module including a circuit board and a chip unit mounted at the circuit board, and a heat dissipation device consisting of a plurality of heat-transfer blocks bonded to the surface of the circuit board and abutted against the peripheral walls of the chip unit to create a heat-transfer path for transferring heat from the chip unit for quick dissipation. 1. An circuit chip module heat dissipation structure , comprising a circuit module , said circuit module comprising a circuit board , at least one chip unit mounted at said circuit board , and a heat dissipation device mounted at said circuit board around each said chip unit , said heat dissipation device comprising at least one heat-transfer block abutted against multiple peripheral walls of each said chip unit to create a heat-transfer path for transferring heat from each said chip unit for dissipation.2. The circuit chip module heat dissipation structure as claimed in claim 1 , wherein said circuit board comprises a copper foil layer arranged on a top surface thereof around each said chip unit; said at least one heat-transfer block of said heat dissipation device is bonded to said copper foil layer and abutted against the peripheral sides of each said heat-transfer block of said heat dissipation device.3. The circuit chip module heat dissipation structure as claimed in claim 1 , wherein each said chip unit of said circuit module is selected from the group of complementary metal-oxide-semiconductor (CMOS) chips and charge-coupled device (CCD) chips.4. The circuit chip module heat dissipation structure as claimed in claim 1 , wherein each said heat-transfer block of said heat dissipation device is a right-angled triangular heat-transfer prism having two right-angled lateral faces and a sloping lateral face claim 1 , one of said two right-angled lateral faces being bonded to said copper foil layer of said circuit board claim 1 , the other of said two ...

TILED HYBRID ARRAY AND METHOD OF FORMING

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably ≦10 μm. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC. 1. A method of forming a tiled array of hybrid assemblies on a baseplate , comprising: a first die; and', 'a second die mounted on and interconnected with said first die;, 'forming a plurality of hybrid assemblies, each of which comprisesetching each vertical edge of said second dies which is to be located adjacent to a vertical edge of another second die in said tiled array such that said etched vertical edge is aligned with a vertical edge of said first die;providing a baseplate on which said tiled array is to be mounted;depositing a plurality of indium bumps on said baseplate where said hybrid assemblies are to be mounted; andpressing said hybrid assemblies onto said indium bumps using a hybridizing machine.2. The method of claim 1 , further comprising wicking epoxy into the gaps between said indium bumps.3. The method of claim 1 , wherein adjacent edges of hybrid assemblies in said tiled array are ≦10 μm apart.4. The method of claim 1 , wherein said etching comprises a dry plasma etch.5. The method of claim 1 , wherein said etching comprises:thinning the substrate of said second die; andperforming a wet etch on said thinned second die and said first die.6. ...

RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER

A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber. 121-. (canceled)22. A method of sensing radiation , the method comprising:receiving radiation by a first radiation absorber layer;in response to receiving the radiation by the first radiation absorption aver, generating charge carriers;applying a bias voltage to a second radiation absorption layer, thereby generating an electric field gradient in the second radiation absorption layer;drifting the charge carriers through the second radiation absorption layer in response to the electric field gradient; andoutputting a signal representative of the drifted charge carriers, the signal being usable for measuring the sensed radiation.23. The method of claim 22 , wherein the first radiation absorption layer comprises a semiconductor material and is characterized by a first predetermined wavelength cutoff.24. The method of claim 23 , wherein the second radiation absorption layer comprises a graded composition of the semiconductor material and is characterized by a wavelength cutoff that varies from a second predetermined wavelength cutoff to the first ...

IMAGE PICKUP ELEMENT PACKAGE, IMAGE PICKUP APPARATUS, AND MANUFACTURING METHOD FOR AN IMAGE PICKUP ELEMENT PACKAGE

An image pickup element package according to an embodiment of the present technology includes a solid-state image pickup element, a circuit board, a translucent substrate, and a support. The solid-state image pickup element includes a light-receiving surface, and a back surface on a side opposite to the light-receiving surface. The circuit board supports the back surface of the solid-state image pickup element. The translucent substrate is opposed to the light-receiving surface. The support includes a resin frame portion and a conductor portion and is disposed between the circuit board and the translucent substrate. The resin frame portion includes a hollow portion that houses the solid-state image pickup element, and a fixation portion that is fixed to a casing portion of an image-pickup device. The conductor portion is integrally provided in the resin frame portion and provides thermal connection between the circuit board and the fixation portion. 1. An image pickup element package , comprising: a light-receiving surface, and', 'a back surface on a side opposite to the light-receiving surface;, 'a solid-state image pickup element including'}a circuit board that supports the back surface of the solid-state image pickup element;a translucent substrate that is opposed to the light-receiving surface; and [ a hollow portion that houses the solid-state image pickup element, and', 'a fixation portion that is fixed to a casing portion of an image-pickup device, and, 'a resin frame portion including'}, 'a conductor portion that is integrally provided in the resin frame portion and provides thermal connection between the circuit board and the fixation portion, the support being disposed between the circuit board and the translucent substrate., 'a support including'}2. The image pickup element package according to claim 1 , wherein a first resin layer that is provided in the circuit board, and', 'a second resin layer that provides connection between the first resin layer and ...

Semiconductor Photomultiplier with Improved Operating Voltage Range

The present disclosure relates to a semiconductor photomultiplier comprising an array of interconnected microcells; wherein the array comprises at least a first type of microcell having a first junction region of a first geometric shape; and a second type of microcell having a second junction region of a second geometric shape. 1. A semiconductor photomultiplier comprising:an array of interconnected microcells; wherein the array comprises at least a first type of microcell having a first junction region of a first geometric shape; and a second type of microcell having a second junction region of a second geometric shape.2. A semiconductor photomultipier as claimed in claim 1 , wherein one of first type of microcell and the second type of microcell is photosentive while the other one of the first type of microcell and the second type of microcell is non-photosentive.3. The semiconductor photomultipier as claimed in ; wherein the microcells located at locations of the array which have within them a region where an electric field is above a predetermined level have a lower breakdown compared to the microcells located at locations of the array which have within them a region where the electric field is below a predetermined level.4. The semiconductor photmultipler as claimed in ; wherein the predetermined level is in the range of 20 volts to 60 volts.6. The semiconductor photomultiplier as claimed in ; wherein one of the first type of microcell and the second type of microcell are located at first locations of the array while the other one of the first type of microcell and the second type of microcell are located at second locations of the array.7. The semiconductor photomultiplier as claimed in ; wherein the first locations and the second locations are associated with different electric fields.8. The semiconductor photomultipler as claimed in ; wherein the electric field associated with one of the first and second locations is greater than the the electric field ...

METHOD OF FABRICATING SEMICONDUCTOR PACKAGE

A semiconductor package including a substrate, a memory chip on the substrate, a mold layer on the substrate to cover a side surface of the memory chip, an image sensor chip on the memory chip and the mold layer, and a connection terminal between and electrically connecting the memory chip to the image sensor chip may be provided. 1. A method of fabricating a semiconductor package , comprising:preparing an image sensor chip having a first surface and a second surface facing each other, the image sensor chip including pixel regions positioned on the second surface of the image sensor chip;mounting a memory chip on the first surface of the image sensor chip such that the memory chip is electrically connected to the image sensor chip through a connection terminal formed between the first surface of the image sensor chip and the memory chip; andforming a mold layer on the first surface of the image sensor chip to cover a side surface of the memory chip to form a chip stack,2. The method of claim 1 , further comprising:preparing a substrate;providing the chip stack on the substrate such that the memory chip faces the substrate; andforming a bonding wire to electrically connect the image sensor chip to the substrate.3. The method of claim 1 , wherein the image sensor chip has a width that is larger than that of the memory chip and is substantially same as that of the mold layer.4. The method of claim 1 , further comprising:forming a re-distribution pattern on the first surface of the image sensor chip to be electrically connected to a circuit layer of the image sensor chip and to be electrically connected to the connection terminal.5. The method of claim 1 , further comprising:forming a dummy terminal between the memory chip and the image sensor chip such that the dummy terminal overlaps the pixel regions, when viewed in a plan view.6. The method of claim 1 , whereinthe memory chip has a surface facing the image sensor chip and an opposite surface facing the surface, ...

COPACKAGING OF ASIC AND SILICON PHOTONICS

A system and method for packing optical and electronic components. A module includes an electronic integrated circuit and a plurality of photonic integrated circuits, connected to the electronic integrated circuit by wire bonds or by wire bonds and other conductors. A metal cover of the module is in thermal contact with the electronic integrated circuit and facilitates extraction of heat from the electronic integrated circuit. Arrays of optical fibers are connected to the photonic integrated circuits. 1. A module , comprising:a substrate having a top surface and a bottom surface and comprising a plurality of conductive traces and a first plurality of contacts, each of the contacts being on the top surface of the substrate and electrically connected to a corresponding conductive trace of the plurality of conductive traces; a second plurality of contacts on the bottom surface of the electronic integrated circuit;', 'a first plurality of wire bond pads at a first edge of the bottom surface of the electronic integrated circuit; and', 'a second plurality of wire bond pads at a second edge, opposite the first edge, of the bottom surface of the electronic integrated circuit,, 'an electronic complementary metal oxide integrated circuit having a top surface and a bottom surface, and comprisingthe second plurality of contacts being between the first plurality of wire bond pads and the second plurality of wire bond pads,each of the contacts of the second plurality of contacts being vertically aligned with and connected to a corresponding contact of the first plurality of contacts, the substrate covers the second plurality of contacts,', 'the substrate does not cover the first plurality of wire bond pads, and', 'the substrate does not cover the second plurality of wire bond pads., 'wherein2. The module of claim 1 , wherein:each contact of the first plurality of contacts is secured to a contact of the second plurality of contacts with solder.3. The module of claim 1 , wherein ...

SEMICONDUCTOR DEVICE

Heat is efficiently discharged without impairing an imaging characteristic of a solid-state imaging element mounted on a substrate. A semiconductor device is provided with a substrate, the solid-state imaging element, and an adhesive portion that adheres the substrate and the solid-state imaging element. The substrate is a substrate provided with metal wiring. The solid-state imaging element is mounted on a surface of the substrate. The adhesive portion adheres a predetermined region on one surface of the solid-state imaging element to the substrate. The adhesive portion has predetermined thermal conductivity and discharges heat generated in the solid-state imaging element toward the substrate. 1. A semiconductor device comprising:a substrate provided with metal wiring;a solid-state imaging element mounted on a surface of the substrate; andan adhesive portion having predetermined thermal conductivity, the adhesive portion that adheres a predetermined region on one surface of the solid-state imaging element to the substrate.2. The semiconductor device according to claim 1 , whereinthe adhesive portion has a larger area in a high temperature portion than in a low temperature portion according to temperature distribution of the solid-state imaging element.3. The semiconductor device according to claim 1 , whereinthe substrate is provided with an insulating film on the surface,the insulating film on the substrate is provided with an exposed portion that opens in the predetermined region to expose the metal wiring, andthe adhesive portion adheres the predetermined region of the solid-state imaging element to the metal wiring of the substrate.4. The semiconductor device according to claim 3 , whereinmore exposed portions are arranged in a high temperature portion than in a low temperature portion according to temperature distribution of the solid-state imaging element.5. The semiconductor device according to claim 3 , whereinexposed portions are arranged in a high ...

SOLAR CELL AND METHOD FOR MANUFACTURING SAME

This solar cell has: a substrate having a board-like base, and a first conductive line and a second conductive line, which are disposed on the board-like base; a plurality of multi-junction solar cells, each of which has a lower electrode bonded on and electrically connected to the first conductive line, a cell laminate, which is disposed on the lower electrode, and which includes a bottom cell layer and a top cell layer, a transparent electrode disposed on the upper surface of the top cell layer, and a conductor that connects the transparent electrode to the second conductive line; a glass plate, which has upper portions of the transparent electrodes of the multi-junction solar cells bonded to one surface thereof using an adhesive; and collecting lens, which is disposed on the other glass plate surface with a transparent adhesive therebetween. 1. A solar cell comprising:a substrate comprising a plate-like base having heat dissipation properties, and a first conductive line and a second conductive line disposed and electrically isolated from each other on the base;a plurality of multi-junction solar ceil units each having a lower electrode that is bonded on, and electrically connected to, the first conductive line, a cell stack comprising a bottom cell layer disposed on an upper surface of the lower electrode and a top cell layer disposed on an upper surface of the bottom cell layer, a transparent electrode disposed on an upper surface of the top cell layer, and a conductor connecting the transparent electrode to the second conductive line;a glass plate having one face bonded to the transparent electrodes of the plurality of multi-junction solar cell units via an adhesive; anda condenser lens disposed on the other face of the glass plate via a transparent adhesive,wherein the condenser lens has a recess at, a part of a boundary region with the transparent adhesive other than a light transmitting portion.2. The solar cell according to claim 1 , further comprising an ...

Low Profile Sensor Package With Cooling Feature And Method Of Making Same

A sensor device and method of making same that includes a silicon substrate with opposing first and second surfaces, a sensor formed at or in the first surface, a plurality of first contact pads formed at the first surface which are electrically coupled to the sensor, and a plurality of cooling channels formed as first trenches extending into the second surface but not reaching the first surface. The cooling channels instead can be formed on one or more separate substrates that are attached to the silicon substrate for cooling the silicon substrate. 1. A sensor device , comprising:a silicon substrate with opposing first and second surfaces;a sensor formed at or in the first surface;a plurality of first contact pads formed at the first surface which are electrically coupled to the sensor; anda plurality of cooling channels formed as first trenches extending into the second surface but not reaching the first surface.2. The device of claim 1 , further comprising:one or more second trenches formed into the first surface; anda plurality of conductive traces each extending from one of the first contact pads and into the one or more second trenches.3. The device of claim 1 , wherein the sensor comprises a plurality of photo detectors.4. The device of claim 1 , further comprising:a second substrate with opposing first and second surfaces, wherein the second surface of the silicon substrate is mounted to the first surface of the second substrate;a plurality of second contact pads disposed at the first surface of the second substrate;a plurality of electrical leads extending through the second substrate and electrically coupled to the plurality of second contact pads;a plurality of wires each extending from one of the first contact pads to one of the second contact pads.5. The device of claim 4 , further comprising:a thermally conductive material disposed between the second surface of the silicon substrate and the first surface of the second substrate6. The device of claim 4 ...

SUPERCONDUCTING NANOWIRE SINGLE-PHOTON DETECTOR, AND A METHOD FOR OBTAINING SUCH DETECTOR

The present invention relates to a superconducting nanowire single-photon detector, which can include a superconducting nanowire configured and arranged for the incidence of a photon on a region thereof and the formation, on that region, of a localized non-superconducting region or hotspot. 1. A superconducting nanowire single-photon detector , comprising a superconducting nanowire configured and arranged for the incidence of a photon on a region thereof and the formation , on said region , of a localized non-superconducting region or hotspot , wherein said superconducting nanowire is made of a high-Tc cuprate superconductor material having a superconducting critical temperature above 77 K.2. The superconducting nanowire single-photon detector according to claim 1 , wherein the thickness of said superconducting nanowire is below 10 nm.3. The superconducting nanowire single-photon detector according to claim 2 , wherein the thickness of said superconducting nanowire is below 1.7 nm.4. The superconducting nanowire single-photon detector according to claim 1 , wherein said high-Tc cuprate superconductor material is a 2D single-crystal material.5. The superconducting nanowire single-photon detector according to claim 1 , wherein said high-Tc cuprate superconductor material is at least one of BiSrCaCuO claim 1 , BiSrCaCuO claim 1 , YBaCuO claim 1 , TlBaCuO claim 1 , TlBaCaCuO claim 1 , TlBaCaCuO claim 1 , TlBaCaCuO claim 1 , HgBaCuO claim 1 , HgBaCaCuO claim 1 , HgBaCaCuO.6. The superconducting nanowire single-photon detector according to claim 1 , wherein the superconducting nanowire is hermetically air- and water-sealed with a sealing material.7. The superconducting nanowire single-photon detector according to claim 6 , wherein the superconducting nanowire is encapsulated by said sealing material claim 6 , wherein said sealing material is an air-impenetrable van der Waals material which is transparent to at least a wavelength of an electromagnetic wave associated to ...

THERMAL INTERFACE MATERIALS WITH WEAR-RESISTING LAYERS AND/OR SUITABLE FOR USE BETWEEN SLIDING COMPONENTS

Exemplary embodiments are disclosed of thermal interface materials with wear-resisting layers and/or suitable for use between sliding components. Also disclosed are devices including thermal interface materials and methods of using thermal interface materials. 1. A device comprising:a housing having a cavity including an opening and an inner surface within the cavity;a component having a surface corresponding to the inner surface within the cavity of the housing, the component configured to be slidably insertable into and slidably removable from the cavity through the opening; anda thermal interface material along the surface of the component, the thermal interface material including a wear-resisting layer facing the inner surface within the cavity of the housing when the component is within the cavity, whereby the wear-resisting layer contacts the inner surface within the cavity of the housing when the component is slidably inserted into or removed from the cavity through the opening.2. The device of claim 1 , further comprising one or heat dissipation fins protruding outwardly from a wall of the housing.3. The device of claim 1 , wherein the wear-resisting layer comprises a wear-resisting matrix and a first thermally-conductive filler within the wear-resisting matrix.4. The device of claim 1 , wherein:the wear-resisting matrix comprises one or more of organic silicone resin, acrylic resin, epoxy resin, and polyamide resin; and/orthe first thermally-conductive filler comprises one or more of aluminum oxide, zinc oxide, boron nitride, aluminum nitride, and silicon carbide; and/orthe first thermally-conductive filler and the wear-resisting matrix have a volume ratio of from 40:60 to 80:20.5. The device of claim 1 , wherein the wear-resisting layer has a hardness of Shore A of 60 to 90.6. The device of claim 1 , wherein:the thermal interface material includes opposite first and second sides;the wear-resisting layer is along the first side of the thermal interface ...

OPTICAL SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME

According to one embodiment, an optical semiconductor module is disclosed. The module includes an optical semiconductor. An electrode lead is arranged apart from the optical semiconductor element. A resin holds the optical semiconductor element and the electrode lead. An interconnect layer electrically or functionally connects the optical semiconductor element and the electrode lead. The optical semiconductor element and the electrode lead are embedded in the same surface side of the resin. A part of the interconnect layer is directly provided on the resin or provided on the resin via an insulating layer. 1. An optical semiconductor module comprising:an optical semiconductor element;an electrode lead arranged apart from the optical semiconductor element;a resin holding the optical semiconductor element and the electrode lead; andan interconnect layer for electrically or functionally connecting the optical semiconductor element and the electrode lead,wherein the optical semiconductor element and the electrode lead are embedded in the same surface side of the resin, and a part of the interconnect layer is directly provided on the resin or provided on the resin via an insulating layer.2. The module of claim 1 , further comprising a drive circuit chip for driving the optical semiconductor module claim 1 ,wherein the drive circuit chip is arranged apart from the optical semiconductor element and the electrode lead, and embedded in the same surface side of the resin, andwherein the interconnect layer comprises a first interconnect layer for connecting the optical semiconductor element and the drive circuit chip, and a second interconnect layer for connecting the drive circuit chip and the electrode lead.3. The module of claim 1 , wherein the optical semiconductor element includes at least one of a light emitting element and a light receiving element.4. The module of claim 1 , wherein the optical semiconductor element includes at least one of an array of light emitting ...

Methods and apparatus for a thermal equalizer in an image sensor

Various embodiments of the present technology may comprise a method and apparatus for an image sensor with a thermal equalizer for distributing heat. The method and apparatus may comprise a thermal equalizer disposed between a sensor die and a circuit die to prevent uneven heating of the pixels in the sensor die. The method and apparatus may comprise a thermal equalizer integrated within the circuit die.

OPTICAL SENSOR MODULE AND A WEARABLE DEVICE INCLUDING THE SAME

A lead frame includes a main plate and a side plate. The main plate has a support portion and a projecting portion. The support portion has two opposite first sides and a support face located between the first sides. The projecting portion projects upward from one of the first sides in a direction opposite to the support face. The side plate is disposed separately from the one of the first sides of the support portion and is spaced apart from the projecting portion. 1. A lead frame for an optical sensor module , comprising:a main plate having a support portion and at least one projecting portion, said support portion having two opposite first sides and a support face located between said two opposite first sides, said at least one projecting portion projecting upward from one of said two opposite first sides in a direction opposite to said support face; andat least one side plate that is disposed separately from said one of said two opposite first sides of said support portion and that is spaced apart from said at least one projecting portion.2. The lead frame as claimed in claim 1 , wherein top of said at least one projecting portion is higher than the top of the said support face of said support portion and the top of said side plate.3. The lead frame as claimed in claim 1 , wherein said at least one projecting portion has an inclined section claim 1 , a connection section and a light partition section claim 1 , said inclined section adjoining said one of said two opposite first sides and inclining said support face by an obtuse angle claim 1 , said connection section extending horizontally from said inclined section toward a mounting face of said at least one side plate claim 1 , said light partition section extending upwardly from said connection section in a direction away from said support face.4. The lead frame as claimed in claim 1 , wherein:said main plate further has a first leg portion and a second leg portion, said first leg portion being spaced apart ...

THERMAL RECEIVER FOR HIGH POWER SOLAR CONCENTRATORS AND METHOD OF ASSEMBLY

A device for dissipating heat from a photovoltaic cell is disclosed. A first thermally conductive layer receives heat from the photovoltaic cell and reduces a density of the received heat. A second thermally conductive layer conducts heat from the first thermally conductive layer to a surrounding environment. An electrically isolating layer thermally couples the first thermally conductive layer and the second thermally conductive layer. 1. A method of dissipating heat from a photovoltaic cell , comprising:coupling the photovoltaic cell to a first thermally conductive layer;coupling the first thermally conductive layer to an electrically isolating layer; andcoupling the electrically isolating layer to a second thermally conductive layer;wherein the first thermally conductive layer reduces a density of received heat from the photovoltaic cell and conducts the heat to the second thermally conductive layer via the electrically isolating layer.2. The method of claim 1 , wherein reducing the heat density in the first thermally conductive layer further comprising spreading heat over a lateral area of the first thermally conductive layer.3. The method of claim 1 , further comprising conducting electricity from the photovoltaic cell in the first thermally conductive layer.4. The method of claim 1 , further comprising coupling a thermally conducting backplane to the second thermally conductive layer to conduct heat away from the second thermally conductive layer.5. The method of claim 1 , wherein the first thermally conductive layer further comprises at least one of copper claim 1 , aluminum claim 1 , iron claim 1 , chrome claim 1 , nickel claim 1 , molybdenum claim 1 , zinc claim 1 , silver claim 1 , gold and tin.6. The method of claim 1 , wherein the first thermally conductive layer and second thermally conductive layer maintain an operating temperature of the photovoltaic cell at or below about 110° C.7. The method of claim 1 , wherein the first thermally conductive layer ...

Photodetector

A photodetector having a sufficient ESD withstand voltage is provided. An embodiment of a photodetector includes a plurality of photodiodes including germanium or a germanium compound in a light absorption layer, and a plurality of heaters configured to apply heat to the light absorption layer of each of the plurality of photodiodes, in which the plurality of heaters are connected in series, the plurality of heaters are connected in parallel, or a plurality of sets of the plurality of heaters serially connected are connected in parallel. 1. A photodetector comprising:a plurality of photodiodes including germanium or a germanium compound in a light absorption layer; anda plurality of heaters configured to apply heat to the light absorption layer of each of the plurality of photodiodes,wherein the plurality of heaters are connected in series, the plurality of heaters are connected in parallel, or a plurality of sets of the plurality of heaters serially connected are connected in parallel.2. The photodetector according to claim 1 ,wherein a photodiode of the plurality of photodiodes includesa silicon substrate;a lower clad layer formed on the silicon substrate;a core layer formed on the lower clad layer and including a silicon slab doped with impurity ions having a first conductivity type, an electrode portion doped with the impurity ions having the first conductivity type at a high concentration, and a waveguide layer connected to the silicon slab;a germanium layer formed on the core layer and including a germanium region doped with impurities having a second conductivity type;an upper clad layer formed on the core layer and the germanium layer; andelectrodes connected to the electrode portion and the germanium region, respectively.3. The photodetector according to claim 1 ,wherein a photodiode of the plurality of photodiodes includesa silicon substrate;a lower clad layer formed on the silicon substrate;a core layer formed on the lower clad layer and including a ...

Photodetector

The present invention is to provide a GePD, the optical sensitivity of which is independent from a temperature, and to achieve a photodetector in which heat applied from heaters is constant even when a plurality of GePDs are provided and in which a temperature and sensitivity of each of the GePDs are the same. The photodetector includes germanium photoreceivers including a silicon substrate, a lower clad layer, a silicon core layer, a silicon waveguide layer, a germanium layer, an upper clad layer, and electrodes. In the photodetector, two or more germanium photoreceivers are arranged adjacent to each other on the silicon substrate, and the photodetector includes resistors embedded in the upper clad layer to cover or surround respective germanium layers of the two or more germanium photoreceivers arranged adjacent to each other, the resistors being made of a metal or a metal compound.

Device For Securing An Infrared Radiation Detector From Unwanted Infrared Radiation And Heat

A device is provided for securing a plurality of infrared radiation detectors from unwanted infrared radiation. The device includes a structure supporting the plurality of infrared radiation detectors. A plurality of nanowires are positioned adjacent to each other so as to define a layer. The layer has an inner surface positioned adjacent an outer surface of the structure and an outer surface directable towards a source of unwanted infrared radiation. The plurality of IR radiation detectors are aligned with a desired field of view so as to receive IR radiation radiating from any objects in the field of view such that a first portion of the IR radiation engages and is absorbed by IR radiation detectors, while a second portion of the IR radiation engages and is absorbed by IR radiation detector is absorbed by layer. 1. A device for securing an infrared radiation detector from unwanted infrared radiation , comprising:a housing defining a cavity therein configured for receiving the infrared radiation detector therein, the housing having an outer surface and a forward wall with an aperture extending through; anda plurality of nanowires positioned adjacent to each other so as to define a layer, the layer having an inner surface positioned adjacent the outer surface of the housing and an outer surface directable towards a source of unwanted infrared radiation.2. The device of wherein the housing includes a rear wall claim 1 , the rear wall configured to support the infrared radiation detector thereon.3. The device of wherein each nanowire of the plurality of nanowires is fabricated from silicon impregnated with silver nanoparticles.4. The device of wherein each nanowire of the plurality of nanowires includes a terminal first end partially defining the inner surface of the layer and a second end.5. The device of wherein the second end of each nanowire of the plurality of nanowires has a generally conical configuration and terminates at a tip.6. The device of wherein the tip ...

OPTOELECTRONIC DEVICE ARRAY AND METHOD FOR PRODUCING A MULTIPLICITY OF OPTOELECTRONIC DEVICE ARRAYS

The invention relates to an optoelectronic component array () with a plurality of adjacent optoelectronic semiconductor components () and a covering body (). According to the invention—each of the optoelectronic semiconductor components () has a ceramic support element () and a semiconductor chip () which is arranged on an upper face of the ceramic support element and which comprises a semiconductor element () designed to generate and/or receive radiation—the covering body () surrounds each of the ceramic support elements () of the optoelectronic semiconductor components in some regions at least in a lateral direction and connects adjacent ceramic support elements () together, and—the lower face of each of the ceramic support elements () is electrically insulated from the semiconductor chip (). 1. Optoelectronic device array having a multiplicity of optoelectronic semiconductor devices arranged one next to the other and an encapsulating body , whereineach of the optoelectronic semiconductor devices has a ceramic carrier body and a semiconductor chip which is arranged on an upper side of the ceramic carrier body and has a semiconductor body provided for generating and/or receiving radiation,the encapsulating body surrounds each of the ceramic carrier bodies of the optoelectronic semiconductor devices in a lateral direction at least in regions and connects neighboring ceramic carrier bodies to one another,in each case an underside of the ceramic carrier body is electrically insulated from the semiconductor chip, andthe optoelectronic device array has at least two through-connection elements by means of which the semiconductor devices are contacted from an underside of the optoelectronic device array.2. Optoelectronic device array according to claim 1 , wherein the ceramic carrier body consists of an electrically insulating material and is free of electrically conductive through-connections.3. Optoelectronic device array according to claim 1 , wherein neighbouring ...

Optoelectronic Module Assembly and Manufacturing Method

An optoelectronic module assembly includes an optoelectronic module. The module includes: an active optoelectronic component in or on a mounting substrate, an optical sub-assembly, and a spacer disposed between the mounting substrate and the optical sub-assembly so as to establish a particular distance between the active optoelectronic component and the optical sub-assembly. The optoelectronic module assembly also includes a recessed substrate including first and second surfaces, wherein the second surface is in a plane closer to the optical sub-assembly than is the first surface. The optoelectronic module is mounted on the first surface. The second surface is for mounting other components. 1. An optoelectronic module assembly comprising:an optoelectronic module including:an active optoelectronic component in or on a mounting substrate,an optical sub-assembly, anda spacer disposed between the mounting substrate and the optical sub-assembly so as to establish a particular distance between the active optoelectronic component and the optical sub-assembly; anda recessed substrate including a first surface on which the optoelectronic module is mounted, the recessed substrate further including a second surface for mounting other components, the second surface being in a plane closer to the optical sub-assembly than is the first surface.2. The optoelectronic module assembly of claim 1 , wherein the recessed substrate comprises a printed circuit board and a second portion other than the printed circuit board claim 1 , a surface of the second portion serving as the first surface claim 1 , wherein the printed circuit board is disposed on the second portion claim 1 , but does not cover the first surface.3. The optoelectronic module assembly of claim 2 , wherein the second portion of the recessed substrate is composed of a metal or ceramic material.4. The optoelectronic module assembly of claim 2 , wherein the second portion of the recessed substrate is at least partially ...

CYTOMETER SPERM SEX SENSING APPARATUS WITH AN AVALANCHE PHOTODIODE

A cytometer includes an avalanche photodiode, a switching power supply, a filter, and voltage adjustment circuitry. The switching power supply includes a feedback loop. The filter is electrically connected between the switching power supply and the avalanche photodiode. The voltage adjustment circuitry adjusts a voltage on the feedback loop based at least in part on a voltage measured between the filter and the avalanche photodiode. 1. A flow cytometry apparatus comprising:a flow chamber configured to direct a fluid stream including cells through an interrogation location;a laser configured to emit electromagnetic radiation along a beam path to the interrogation location to illuminate a given cell; receive electromagnetic radiation from the interrogation location emitted by the given cell; and', 'generate a signal indicative of an intensity of the received electromagnetic radiation;, 'an avalanche photodiode configured toat least one processor configured to analyze the signal indicative of the intensity of the received electromagnetic radiation to determine a characteristic of the given cell;a switching power supply including a feedback loop;a temperature sensor configured to sense a temperature and generate a corresponding temperature signal encoding temperature data; andvoltage adjustment circuitry configured to adjust a voltage on the feedback loop based at least in part on the temperature data.2. The flow cytometry apparatus of claim 1 , wherein the characteristic of the given cell comprises an amount of chromosomes.3. The flow cytometry apparatus of claim 1 , wherein the characteristic of the given cell comprises an amount of DNA.4. The flow cytometry apparatus of claim 1 , wherein the characteristic of the given cell comprises a sex-differentiation characteristic.5. The flow cytometry apparatus of claim 1 , further comprising a filter electrically connected between the switching power supply and the avalanche photodiode claim 1 , wherein the voltage adjustment ...

SEMICONDUCTOR DEVICE, IMAGING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

An improvement in heat radiation efficiency is achieved. A semiconductor device according to the present technology includes a substrate portion on which a semiconductor chip is mounted and in which an external connection terminal for performing electrical connection to the outside is formed on a rear surface on a side opposite to a front surface which is a surface on a side where the semiconductor chip is mounted, an outer wall portion that protrudes toward the front surface side in an outer circumferential portion of the substrate portion, a lid portion which is supported by the outer wall portion and covers the semiconductor chip, and a heat storage member which is disposed at a position further inside than the outer wall portion between the rear surface of the substrate portion and a rear surface of the lid portion.

SOLID-STATE IMAGING DEVICE

A first pixel circuit has a plurality of photodiodes of different sizes. A second pixel circuit is connected to the first pixel circuit, and has a holding portion that holds a first optical signal and a second optical signal. The peripheral circuit drives and controls the second pixel circuit, and determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value. When it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal. When it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal. 1. A solid-state imaging device comprising:a first pixel circuit including a plurality of photodiodes of different sizes;a second pixel circuit that is connected to the first pixel circuit; anda peripheral circuit configured to drive and control the second pixel circuit, whereinthe second pixel circuit comprises a holding portion configured to hold a first optical signal and a second optical signal, the first optical signal and the second optical signal being respectively obtained by the plurality of photodiodes of different sizes at a first exposure time and a second exposure time shorter than the first exposure time, andthe peripheral circuit determines whether a voltage value of the first optical signal is equal to or greater than a predetermined value, wherein when it is determined that the voltage value of the first optical signal is equal to or greater than the predetermined value, a signal obtained by adding the second optical signal to the first optical signal is set as an output signal; and when it is determined that the voltage value of the first optical signal is less than the predetermined value, the first optical signal is set as an output signal.2. The ...

PHOTODETECTOR WITH INTEGRATED TEMPERATURE CONTROL ELEMENT

A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value. 1. A temperature-controlled photodetector sub-system , comprising:a photodetector located on a substrate, wherein said photodetector has at least one first edge; anda temperature control element located on said substrate, and said temperature control element has a second edge situated proximate said at least one first edge of said photodetector.2. The temperature-controlled photodetector sub-system of claim 1 , wherein said photodetector is a germanium photodetector.3. The temperature-controlled photodetector sub-system of claim 1 , wherein said temperature control element is a selected one of a heater and a cooler.4. The temperature-controlled photodetector sub-system of claim 1 , wherein said second edge of said temperature control element is situated within a distance of less than 10 microns from said at least one first edge of said photodetector.5. The temperature-controlled photodetector sub-system of claim 1 , wherein said second edge of said temperature control element is situated within a distance of less than 50 microns from said at least one first edge of said photodetector.6. The temperature-controlled photodetector sub-system of claim 1 , wherein said temperature control element is a Peltier device.7. The temperature-controlled photodetector sub-system of claim 1 , further ...

SYSTEM AND METHOD FOR COOLING COMPONETS IN AN IMAGING SYSTEM

An imaging system based on an imaging device and/or a cooling system is provided. The imaging system may include a control module, an imaging device, and/or a cooling system. The imaging device may include a first portion and a second portion. The cooling system may include a cooling module configured to generate a cooling medium, and/or a cooling medium passage configured to spread the cooling medium. The cooling medium passage may belong to a closed loop. At least part of the cooling system may be located within the imaging device such that the cooling medium may be in direct contact with the at least part of the imaging device. 116-. (canceled)17. An imaging system , comprising:an imaging device; a cooling module configured to generate a cooling medium;', 'a cooling medium passage configured to spread the cooling medium to the at least one target portion of the imaging device; and', 'at least one hollow chamber configured to house at least a portion of the at least one target portion of the imaging device., 'a cooling system configured to cool at least one target portion of the imaging device, including18. The system of claim 17 , wherein the imaging device includes a plurality of detector units claim 17 , and the at least one target portion of the imaging device includes at least one of the plurality of detector units.19. The system of claim 18 , wherein each of the at least one hollow chamber is configured to accommodate one or more of the plurality of detector units.20. The system of claim 17 , wherein the imaging device includes a plurality of electronics units claim 17 , and the at least one target portion of the imaging device includes at least one of the plurality of electronics units.21. The system of claim 20 , wherein each of the at least one hollow chamber is configured to accommodate one or more of the plurality of electronics units.22. The system of claim 17 , wherein each of the at least one hollow chamber includes an inlet hole and an outlet hole ...

Bolometer having absorber with pillar structure for thermal shorting

A semiconductor device includes a substrate having an electrode structure. An absorber structure is suspended over the electrode structure and spaced a first distance apart from the first electrode structure. The absorber structure includes i) suspension structures extending upwardly from the substrate and being electrically connected to readout conductors, and ii) a pillar structure extending downwardly from the absorber structure toward the first electrode structure. The pillar structure has a contact portion located a second distance apart from the first electrode structure, the second distance being less than the first distance. The absorber structure is configured to flex toward the substrate under a test condition. The second distance is selected such that the contact portion of the pillar structure is positioned in contact with the first electrode structure when the absorber structure is flexed in response to the test condition.

SEMICONDUCTOR PACKAGE AND FORMING METHOD THEREOF

A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure. A method of forming the semiconductor package is also provided. 1. A semiconductor package , comprising:a heat dissipation substrate comprising a first conductive through-via embedded therein;a sensor die disposed on the heat dissipation substrate;an insulating encapsulant laterally encapsulating the sensor die;a second conductive through-via penetrating through the insulating encapsulant, wherein the second conductive through-via is in contact with the first conductive through-via; anda first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate, wherein the sensor die is located between the second redistribution structure and the heat dissipation substrate, the second redistribution structure has a window allowing a sensing region of the sensor die receiving light, and the first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive ...

METHODS OF SPERM CELL SENSING UTILIZING AN AVALANCHE PHOTODIODE AND CYTOMETER APPARATUS

A cytometer includes an avalanche photodiode, a switching power supply, a filter, and voltage adjustment circuitry. The switching power supply includes a feedback loop. The filter is electrically connected between the switching power supply and the avalanche photodiode. The voltage adjustment circuitry adjusts a voltage on the feedback loop based at least in part on a voltage measured between the filter and the avalanche photodiode. 1) A system for causing the deactivation of particles in a flow cytometry apparatus , the system comprising:a first electromagnetic radiation source configured to emit an interrogation beam of electromagnetic radiation at a particle in an interrogation location of the flow cytometry apparatus;an avalanche photodiode configured to detect an emission of electromagnetic radiation by the particle at the interrogation location, the avalanche photodiode further configured to output a signal based on the detected emission; anda second electromagnetic radiation source configured to emit a deactivation beam of electromagnetic radiation at the particle based on the output signal of the avalanche photodiode.2) The system of claim 1 , wherein the particle is a sperm cell.3) The system of claim 1 , wherein the particle comprises a particle stained by a dye.4) The system of claim 3 , wherein the dye is a DNA-interlacing dye.5) The system of claim 1 , wherein the emission of electromagnetic radiation by the particle at the interrogation location is a fluorescence caused by an irradiation of the particle by the interrogation beam of electromagnetic radiation emitted by the first electromagnetic radiation source.6) The system of claim 1 , wherein the deactivation beam of electromagnetic radiation emitted by the second electromagnetic radiation source causes a deactivation of the particle.7) The system of claim 6 , wherein the deactivation is a photo-ablation.8) The system of claim 1 , wherein an input to the avalanche photodiode is controlled by a ...

Optoelectronic Device with a Mixture Having a Silicone and a Fluoro-Organic Additive

An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive. The mixture may be a component of at least one of the following elements: a package body element surrounding the at least one semiconductor at least in places, a radiation-guiding element arranged in a beam path of a radiation emitted by the semiconductor or detected by the semiconductor, a heat-conducting element configured to conduct heat emitted by the semiconductor or received by the semiconductor, or an adhesive element. 116-. (canceled)17. An optoelectronic device comprising:at least one radiation-emitting or radiation-detecting semiconductor; anda mixture comprising silicone and a fluoro-organic additive, wherein the mixture is a component of at least one of the following elements:a package body element surrounding the at least one semiconductor at least in places,a radiation-guiding element arranged in a beam path of a radiation emitted by the semiconductor or detected by the semiconductor,a heat-conducting element configured to conduct heat emitted by the semiconductor or received by the semiconductor,an adhesive element.18. The optoelectronic device according to claim 17 , wherein the fluoro-organic additive is a compound comprising a functional group selected from a hydroxyl group claim 17 , an epoxy group claim 17 , or a group having a C═C double bond claim 17 , and wherein the functional group is covalently bound to an at least partly fluorinated alkyl group.19. The optoelectronic device according to claim 18 , wherein the fluoro-organic additive additionally comprises a linker group arranged between the functional group and the at least partly fluorinated alkyl group.20. The optoelectronic device according to claim 18 , wherein the at least partly fluorinated alkyl group is a ...

HEATED IMAGE SENSOR WINDOW

An image sensor assembly having a sensor window positioned in front of an image sensor, having structure and/or characteristics to prevent the formation of condensation on the sensor window. Structure to prevent the formation of condensation includes thin films which can have anti-condensation, anti-reflective, electrically conductive, and/or thermally conductive properties. The sensor window can further have a textured surface to displace water so as to avoid condensation formation on the window surface. The sensor window, and in some embodiments a frame, can be maintained at an elevated temperature proximate to the image sensor during operation to prevent the formation of condensation. 1. An image sensor assembly , comprising:a cooling structure;an image sensor, the image sensor being positioned along an optical path to view a sample region, the image sensor further being coupled to and cooled by the cooling structure; anda sensor window arranged between the image sensor and the sample region.2. An image sensor assembly according to claim 1 , wherein the sensor window is coated with an anti-fog coating on an exterior surface of the sensor window.3. An image sensor assembly according to claim 1 , wherein the image sensor assembly is configured to image electrophoresis gels claim 1 , nucleic acids blots claim 1 , protein blots claim 1 , bioluminescent assay results claim 1 , and/or chemiluminescent assay results.4. An image sensor assembly according to claim 1 , wherein the cooling structure is a thermoelectric cooling element (TEC) and the sensor window is heated with heat generated by the TEC.5. An image sensor assembly according to claim 1 , wherein the sensor window has a thermal conductivity (κ) of about 0.04-1.14 W/(m*K).6. An image sensor assembly according to claim 1 , wherein the sensor window has a linear coefficient of thermal expansion (α) of about 3×10-80×10(1/K).7. An image sensor assembly claim 1 , comprising:a thermoelectric cooling element (TEC);an ...

PHOTODETECTOR WITH INTEGRATED TEMPERATURE CONTROL ELEMENT

A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value. 128-. (canceled)29. A photonic device comprising:a wafer comprising a waveguiding layer;a photodetector integrated with the wafer in optical communication with the waveguiding layer; anda temperature control element integrated with the wafer proximate to the photodetector so as to control the temperature thereof.30. The photonic device of claim 29 , wherein the photodetector is a germanium photodetector.31. The photonic device of claim 29 , wherein the temperature control element comprises one of a heater and a cooler.32. The photonic device of claim 29 , wherein the temperature control element is disposed at most 10 microns apart from the photodetector.33. The photonic device of claim 29 , wherein the temperature control element is disposed less than 50 microns apart from the photodetector.34. The photonic device of claim 29 , wherein the temperature control comprises a Peltier device.35. The photonic device of claim 29 , further comprising a thermal measurement device situated proximate to the photodetector.36. The photonic device of claim 35 , including a control circuit connecting the temperature control element with the thermal measurement device and configured to control a temperature of the photodetector in a predetermined temperature range.37. The photonic device of claim 29 , ...

Ultraviolet Device Encapsulant

A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. The filler material includes microparticles and/or nanoparticles and can have a thermal coefficient of expansion significantly smaller than a thermal coefficient of expansion of the matrix material for relevant atmospheric conditions. The relevant atmospheric conditions can include a temperature and a pressure present during each of: a curing and a cool down process for fabrication of a device package including the composite material and normal operation of the ultraviolet device within the device package. 1. A device package , comprising:an ultraviolet device for which operation involves ultraviolet radiation of a target wavelength; and a matrix material at least partially transparent to ultraviolet radiation of the target wavelength and having a matrix material thermal coefficient of expansion; and', 'at least one filler material at least partially transparent to the ultraviolet radiation incorporated in the matrix material, wherein the at least one filler material includes a combination of microparticles and nanoparticles and has a filler thermal coefficient of expansion at least three times smaller than the matrix material thermal coefficient of expansion for atmospheric conditions present during a curing and a cool down process for fabrication of the device package, and wherein a concentration of the at least one filler material in the composite material exceeds a percolation threshold for the filler material., 'an encapsulant located adjacent to at least one surface of the ultraviolet device, wherein the encapsulant is a composite material including2. The device package of claim 1 , wherein the at least one filler material has a spatial distribution ...

ELECTROMAGNETIC WAVE MODULE AND ELECTROMAGNETIC WAVE CAMERA SYSTEM USING THE SAME

An electromagnetic wave module comprising a chip and a lens unit. The chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face. The lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens. The recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face. At least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip. 1. An electromagnetic wave module comprising a chip and a lens unit ,wherein the chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face,wherein the chip at least includes an antenna electrode disposed on the first face, a reference portion disposed on the second face and configured to determine a reference potential, and a semiconductor portion disposed between the antenna electrode and the reference portion and configured to perform gain action or rectification action on electromagnetic waves,wherein the lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens,wherein the recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face, andwherein at least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip.2. The electromagnetic wave module according to claim 1 , wherein at least a part of the sixth face serves as a first positioning portion provided on a part or whole of the sixth face. ...

LASER MICROSCOPE AND LASER MICROSCOPE SYSTEM

Provided is a laser microscope that includes a beam-scanning unit that scans a sample with a laser beam emitted from a laser light source; two or more photodetectors each formed of a superconducting nanowire single photon detector that detects a beam returning from the sample as a result of the scanning of the laser beam by the beam-scanning unit; and one cryocooler that cools the photodetectors. The photodetectors respectively detect beams that have passed through different channels. 1. A laser microscope comprising:a beam-scanning unit that scans a sample with a laser beam emitted from a laser light source;two or more photodetectors each formed of a superconducting nanowire single photon detector that detects a beam returning from the sample as a result of the scanning of the laser beam by the beam-scanning unit; andone cryocooler that cools the photodetectors,wherein the photodetectors respectively detect beams that have passed through different channels.2. The laser microscope according to claim 1 , wherein the channels cause beams having different wavelengths to enter the photodetectors.3. The laser microscope according to claim 2 , further comprising:a spectral optical system that disperses a beam returning from the sample into beams having different wavelengths,wherein the beams dispersed by the spectral optical system are detected by the photodetectors via the channels.4. The laser microscope according to claim 2 , wherein the photodetectors respectively have sensitivity peaks corresponding to the wavelengths of the beams.5. The laser microscope according to claim 1 , wherein the channels are connected to the photodetectors via beam-guiding members.6. The laser microscope according to claim 5 , wherein the beam-guiding members are configured to be connectable to different ones of the channels.7. A laser microscope system comprising:two or more laser microscopes each equipped with a beam-scanning unit that scans a sample with a laser beam emitted from a laser ...

OPTICAL SENSOR MODULE AND A WEARABLE DEVICE INCLUDING THE SAME

An optical sensor module has a light receiver and a light-emitter which is surrounded by a light blocking wall, wherein the light receiver is disposed on a main plate and the light-emitter is disposed on a side plate separately from the main plate. The light blocking wall is formed as a light barrier wall between the light receiver and the light-emitter. A projecting portion projecting upward from the main plate is enclosed by the light barrier wall, and a top face of the projecting portion is higher than the light receiving face and the light-emitting face. 1. An optical sensor module comprising: a main plate that has a support portion and at least one projecting portion, said support portion having two opposite first sides and a support face located between said two opposite first sides, said at least one projecting portion projecting upward from one of said two opposite first sides in a direction opposite to said support face, said at least one projecting portion having a top face extending away from said support face, and', 'at least one side plate that is disposed separately from said one of said opposite first sides of said support portion and being spaced apart from said at least one projecting portion;, 'a lead frame including'} 'a light receiver that is disposed on said support face and that has a light receiving face opposite to said support face;', 'a receiver unit including'} 'a light-emitter that is disposed on a mounting face of said at least one side plate and that has alight-emitting face opposite to said mounting face; and', 'at least one light-emitting unit including'} a first light-blocking wall that has a first opening exposing said light-receiver, and', 'a second light-blocking wall that has at least one second opening exposing said light-emitting unit, said first and second light-blocking walls adjoining each other between said first and second openings to form at least one common light barrier wall,', 'wherein said at least one projecting ...

Semiconductor chip having tampering feature

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

SEMICONDUCTOR CHIP HAVING TAMPERING FEATURE

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures. 1. An integrated circuit comprising:a structure including a semiconductor layer and an electrically insulating layer having a top surface and a bottom surface, the semiconductor layer adjoining the top surface of the electrically insulating layer;electronic circuitry on the semiconductor layer;a triggering circuit including a normally-OFF heterojunction field-effect photo-transistor on the structure;a reactive layer on the structure configured for disabling the electronic circuitry, the reactive layer being directly or indirectly reactive to current flowing through the normally-OFF heterojunction field-effect photo-transistor.2. The integrated circuit of claim 1 , wherein the electronic circuitry comprises CMOS circuitry.3. The integrated circuit of claim 2 , further including a dielectric layer on the structure and a second semiconductor layer within the dielectric layer claim 2 , the normally-OFF heterojunction field-effect photo-transistor including source/drain regions and a photosensitive gate region adjoining the second semiconductor layer.4. The integrated circuit of claim 1 , further including a voltage source electrically connected to the normally-OFF heterojunction field-effect photo-transistor and a ground terminal electrically connected to the ...

ENERGY CONVERSION DEVICE WITH MULTIPLE VOLTAGE OUTPUTS AND POWER TRANSISTOR MODULE USING THE SAME

An energy conversion device in electrical communication with at least one fin is provided to output multiple voltages. The at least one fin which is originating from inside the energy conversion device, which is formed from a metal contact disposed between energy conversion device components, and which is spaced with a first end contact and a second end contact. A power transistor module includes at least one transistor, a gate driver and the energy conversion device. The gate driver is configured to drive the at least one transistor. The energy conversion device is configured to supply isolated voltages to the gate driver. 1. An energy conversion device in electrical communication with at least one fin for outputting multiple voltages , said at least one fin[1] originating from inside said energy conversion device;[2] formed from a metal contact disposed between energy conversion device components; and[3] spaced with a first end contact and a second end contact.2. The energy conversion device of claim 1 , wherein said energy conversion device components are stacked such that all the energy conversion device components have their positive charged side facing the same direction claim 1 , or stacked such that the energy conversion device components have their positive charged side reversed on the other side of the metal contact.3. The energy conversion device of claim 1 , wherein said energy conversion device components are reversed on the other side of the metal contact claim 1 , wherein the number of junctions between end contacts and metal contacts claim 1 , and between metal contacts claim 1 , are the same.4. The energy conversion device of claim 1 , wherein said energy conversion device is in thermal communication with said at least one fin.5. The energy conversion device of claim 1 , wherein said at least one fin is a common ground fin claim 1 , enabled by reversing of the energy conversion device components on the other side of the fin.6. The energy conversion ...

IMAGE SENSOR INCLUDING TEMPERATURE SENSOR AND ELECTRONIC SHUTTER FUNCTION

An image capture device includes an image sensor, a reading component, a timing generator, and a voltage regulator. The image sensor includes a temperature sensor configured to measure temperature measurements of the image sensor. The reading component is configured to read the temperature measurements from the temperature sensor. The timing generator is configured to apply an electronic shutter pulse to the image sensor. The voltage regulator is coupled between the temperature sensor and the reading component for regulating increased voltage at the reading component resulting from the electronic shutter pulse. 1. An image capture device comprising:an image sensor including a temperature sensor configured to measure temperature measurements of said image sensor;a reading component configured to read said temperature measurements from said temperature sensor;a timing generator configured to apply an electronic shutter pulse to said image sensor; anda voltage regulator coupled between said temperature sensor and said reading component for regulating an increased voltage at the reading component resulting from the electronic shutter pulse.2. The image capture device as set forth in wherein the voltage regulator includes a Zener diode.3. The image capture device as set forth in wherein said Zener diode is connected to ground and is configured to short-circuit to ground when voltage from the electronic shutter pulse is applied to said temperature sensor.4. The image capture device as set forth in wherein the voltage regulator includes a resistor between said Zener diode and said temperature sensor.5. The image capture device as set forth in wherein said temperature sensor is a diode.6. The image capture device as set forth in wherein a cathode of said diode is connected to said reading component and an anode of said diode is connected to ground.7. The image capture device as set forth in wherein a substrate of the image sensor is an n-type substrate and wherein said ...