СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, ВКЛЮЧАЮЩЕЕ В СЕБЯ ЛЮМИНЕСЦЕНТНУЮ КЕРАМИКУ И СВЕТОРАССЕИВАЮЩИЙ МАТЕРИАЛ (ВАРИАНТЫ)

Керамическое тело 30, содержащее преобразующий длину волны материал, расположено на пути света, испускаемого светоизлучающей областью 31 полупроводниковой структуры 12, содержащей светоизлучающую область, расположенную между областью n-типа и областью р-типа. Слой прозрачного материала 36 также расположен на пути света, испускаемого светоизлучающей областью. Прозрачный материал может соединять керамическое тело с полупроводниковой структурой. Частицы 45, сформированные для рассеяния света, испускаемого светоизлучающей областью, находятся в слое адгезивного материала. В некоторых вариантах осуществления данные частицы являются люминофором; в некоторых вариантах осуществления данные частицы являются не преобразующим длину волны материалом. Изобретение обеспечивает возможность улучшения равномерности вывода смешанного света из устройства, а также улучшения цветовых характеристик смешанного света. 2 н. и 20 з.п. ф-лы, 4 ил.

СВЕТОИЗЛУЧАЮЩЕЕ УСТРОЙСТВО, СОДЕРЖАЩЕЕ ФИЛЬТР (ВАРИАНТЫ)

Полупроводниковая структура включает в себя светоизлучающую область, расположенную между областью n-типа и областью р-типа. Преобразующий длину волны материал, сформированный так, чтобы поглощать часть первого света, излучаемого данной светоизлучающей областью, и излучать второй свет, расположен на пути первого света. Фильтр расположен на пути первого света, чтобы поглощать или отражать часть первого света при входной интенсивности потока, большей, чем заданная ненулевая входная интенсивность потока. Согласно второму варианту фильтр расположен на пути первого света и второго света, при этом фильтр сформирован так, чтобы поглощать или отражать часть второго света, а пропускать, по меньшей мере, 50% света, падающего на фильтр; при этом преобразующий длину волны материал расположен между полупроводниковой структурой и фильтром. Изобретение обеспечивает возможность корреляции определенной температуры света к заданной. 2 н. и 7 з.п. ф-лы, 6 ил.

СВЕТОИЗЛУЧАЮЩЕЕ ДИОДНОЕ УСТРОЙСТВО

... 1. Светоизлучающее диодное устройство, которое содержит: ! светоизлучающий слой (103); и ! фильтрующий слой (105), который расположен на поверхности светоизлучающего слоя (103), фильтрующий слой (105) выбран так, чтобы принимать свет от светоизлучающего слоя, пропускать свет, попадающий в угловой диапазон, и не пропускать света, не попадающие в угловой диапазон, при этом фильтрующий слой (105) представляет собой интерференционный фильтрующий слой. ! 2. Светоизлучающее диодное устройство по п.1, в котором угловой диапазон представляет собой диапазон в пределах ±5° относительно нормали к фильтрующему слою или диапазон в пределах ±10° относительно нормали к фильтрующему слою или диапазон в пределах ±15° относительно нормали к фильтрующему слою или диапазон в пределах ±20° относительно нормали к фильтрующему слою или диапазон в пределах ±25° относительно нормали к фильтрующему слою. ! 3. Светоизлучающее диодное устройство по любому из предыдущих пунктов, в котором фильтрующий слой (105) устроен ...

Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung

Lichtemittierende Halbleitervorrichtung

Lichtemittierende Halbleitervorrichtung (100), umfassend: eine lichtemittierende Struktur (105), umfassend eine Halbleiterschicht (102) des ersten Leitungstyps, eine Halbleiterschicht (104) des zweiten Leitungstyps und eine aktive Schicht (103) zwischen der Halbleiterschicht (102) des ersten Leitungstyps und der Halbleiterschicht (104) des zweiten Leitungstyps, und eine erste Elektrode (112) auf der Halbleiterschicht (102) des ersten Leitungstyps, wobei die lichtemittierende Struktur (105) eine äußere Nut (106) umfasst, die auf einem äußeren Bereich der lichtemittierenden Struktur (105) derart ausgebildet ist, dass die Dicke des äußeren Bereichs der lichtemittierenden Struktur (105) kleiner als die Dicke eines inneren Bereichs der lichtemittierenden Struktur (105) ist.

Lichtemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung

GLASUEBERZUG FUER OPTISCHES HALBLEITER- BAUELEMENT

Optoelektronische Leuchtvorrichtung

Die Erfindung betrifft eine optoelektronische Leuchtvorrichtung, umfassend: – ein optoelektronisches Halbleiterbauteil mit einer eine lichtemittierenden Fläche umfassende Oberseite, – ein das Halbleiterbauteil einbettendes und die lichtemittierende Fläche freilassendes Gehäuse, – wobei eine Gehäusefläche mit einer lichtstreuenden dielektrischen Lackschicht beschichtet ist, die auf eine der Gehäusefläche abgewandten Fläche der Lackschicht einfallendes Licht streuen kann. Die Erfindung betrifft ferner ein Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung.

Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Es wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips (1) angegeben, umfassend die folgenden Schritte: Bereitstellen einer Halbleiterschichtenfolge (10), Anordnen einer metallischen Spiegelschicht (21) an einer Oberseite der Halbleiterschichtenfolge (10), Anordnen einer Spiegelschutzschicht (3) zumindest an freiliegenden Seitenflächen (21c) der Spiegelschicht, teilweise Entfernen der Halbleiterschichtenfolge (10), wobei die Spiegelschicht (21) Öffnungen (23) zur Halbleiterschichtenfolge (10) hin aufweist, die in lateralen Richtungen (l) von der Spiegelschutzschicht (3) umrandet werden, das teilweise Entfernen der Halbleiterschichtenfolge (10) im Bereich der Öffnungen (23) der Spiegelschicht (21) erfolgt, das Anordnen der Spiegelschutzschicht (3) an den freiliegenden Seitenflächen (21c) der Spiegelschicht (21) selbstjustierend erfolgt.

Lichtemittierende Vorrichtung.

ORGANISCHES LUMINESZENTES ELEMENT UND SEIN SUBSTRAT

ORGANISCHES LUMINESZENTES ELEMENT UND SEIN SUBSTRAT

Lichtemittierende Vorrichtung und Diode

Lichtemittierende Diode mit lichtreflektierender Schicht

Lichtquelle, Reflexionsleuchte und Kraftfahrzeugfrontscheinwerfer

Lichtquelle für eine Reflexionsleuchte, aufweisendein Substrat,ein lichtemittierendes Bauteil mit einer ersten Oberfläche, einer gegenüberliegend positionierten zweiten Oberfläche, Seitenflächen, welche die erste und die zweite Oberfläche verbinden, und einer Dicke senkrecht zu der ersten Oberfläche, wobei das lichtemittierende Bauteil eine Leuchtdiode aufweist, undein lichtabsorbierendes Bauteil auf einer Oberfläche des Substrats, wobei das lichtabsorbierende Bauteil eingerichtet ist, Licht zu absorbieren, das von einer oder mehr der Seitenflächen des lichtemittierenden Bauteils emittiert wird, wobei eine orthogonale Projektion des lichtabsorbierenden Bauteils an der Oberfläche des Substrats aufweist:einen Abschnitt, der eine orthogonale Projektion des lichtemittierenden Bauteils an der Oberfläche des Substrats umgibt und an diese angrenzt, undeine Breite, die das 2- bis 3-fache der Dicke des lichtemittierenden Bauteils beträgt.

OPTOELEKTRONISCHER HALBLEITERCHIP MIT KONTAKTELEMENTEN UND DESSEN ERSTELLUNGSVERFAHREN

Semiconductor device esp. LED with increased life

A method of improving the properties of an LED, having one or more light-emitting chips (23), first and second lead frames (13,15) and an encapsulating layer (19), involves applying a liq. coating (21) over the chip (23) and then positioning the chip and connecting it to the lead frames (13,15). liq. coating application over the chip and the lead frames being effected before applying the encapsulating layer (19) over the chip. Pref. the liq. coating (21) is a polyalkylmethylsiloxane, dimethyl-polysiloxane or polyarylalkylsiloxane. Also claimed are (i) a method of improving the reliability of a semiconductor device; (ii) and LED; and (iii) a semiconductor device including the liq. coating (21).

Gruppe III/Nitrid-basierte Verbindungshalbleitervorrichtung und dessen Herstellungsverfahren

Die Erfindung betrifft ein Verfahren zur Herstellung einer Gruppe III/Nitrid-basierten Verbindungshalbleitervorrichtung mit dem Trennen der Vorrichtung in individuelle Chips mittels eines Rohchipzerteilungsmessers. Ein Abschnitt einer Epitaxieschicht, wo ein Rohchipzerteilungsmesser anzuordnen ist, wird teilweise oder vollständig durch einen Ätzvorgang entfernt, um dadurch einen Graben auszubilden. Eine isolierende Schicht wird auf dem Boden und auf den Seitenoberflächen des Grabens ausgebildet. Ein Wafer wird in Chips derart zerteilt, dass der Boden des Grabens mittels des Rohchipzerteilungsmessers entfernt wird, ohne die Seitenoberflächen der isolierenden Schicht vollständig zu entfernen. Die isolierende Schicht wird auf den Seitenoberflächen des Grabens derart ausgebildet, dass die Schicht eine p-Schicht bis zu einer n-Schicht bedeckt, die in Gruppe III/Nitrid-basierten Verbindungshalbleiterschichten enthalten sind, so dass ein Kurzschluss zwischen der p-Schicht und der n-Schicht vermieden ...

Optoelectronic structural element for light emitting diodes has an epitaxial semiconductor layer sequence with an electromagnetic radiation emitting zone and electrical contact region(s) with at least one radiation permeable zinc oxide

An optoelectronic structural element has an epitaxial semiconductor layer sequence (6) with an electromagnetic radiation emitting zone and at least one electrical contact region (10) with at least one radiation permeable zinc oxide (ZnO) containing electrical contact layer (ECL), connected electrically to the outer semiconductor layer (5), where the ECL contains a waterproof material (8) for protection against moisture.

LED for illuminator, mainly for illumination of aircraft cabins, using LED crystal with surface useful for light output, from which are emitted photons for ambient space of LED, with LED efficiency increased by optimum

LED for illuminator uses LED crystal (1) with surface (2) useful for light output, from which are emitted photons (6) into LED ambient space. Useful surface of LED crystal is improved to optimum by boundary layer junction (10) between medium (11,12), different from LED crystal. Used medium has preset, different refraction index, for improved efficiency. Preferably useful surface of LED crystal, facing user is coated. All useful surfaces (2-4) of LED crystal, not used for electric and/or mechanical coupling may be optically improved by boundary layer junction.

Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Es wird ein optoelektronisches Halbleiterbauelement angegeben, dass einen Halbleiterkörper (10) mit einer auf einer Hauptfläche des Halbleiterkörpers (10) aufgebrachten Kontaktmetallisierung (20) und eine Schutzschicht (30), die den Halbleiterkörper (10) und die Kontaktmetallisierung (20) teilweise bedeckt, ein an den Halbleiterkörper (10) seitens der Hauptfläche stoffschlüssig angefügtes Substrat (40), eine Aussparung (50) und eine innerhalb der Aussparung (50) angeordnete Anschlussschicht (60) aufweist. Die Aussparung (50) und die Anschlussschicht (60) erstrecken sich von einer dem Halbleiterkörper (10) abgewandten Seite des Substrats (40) durch das Substrat (40) und die Schutzschicht (30) bis zu der Kontaktmetallisierung (20), und die Anschlussschicht (60) kontaktiert die Kontaktmetallisierung (20) elektrisch.

Lichtquellesystem

Ein Lichtquellesystem, umfassend eine lichtemittierende Lichtquelle eine optische Leiterplatte; und eine Beschichtung, die farbumwandelndes Material enthält, wobei die Lichtquelle einen Nitridverbindungs-Halbleiter der Formel: IniGAjAlkN umfasst, in der i ≤ 0, j ≤ 0, k ≤ 0, und i+j+k = 1, dotiert mit verschiedenen Verunreinigungen, worin InGaN und GaN eingeschlossen sind, wobei der Halbleiter blaues Licht emittiert und ein Hauptemissionspeak des Halbleiters im Bereich von 400 nm bis 530 nm liegt, wobei die Beschichtung einen ersten Teils des von der Lichtquelle kommenden blauen Lichts durch Absorption filtert, einen zweiten Teil des von der Lichtquelle kommenden blauen Lichts aussendet, das absorbierte blaue Licht in ein anderes Licht größerer Wellenlänge konvertiert und dieses andere Licht mit dem ausgesendeten Teil des von der Lichtquelle kommenden blauen Lichts mischt, so dass eine Lichtkombination ausgestrahlt wird, wobei die optische Leiterplatte das von der Lichtquelle kommende Licht ...

Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips

Ein optoelektronischer Halbleiterchip (11) umfasst eine erste Halbleiterschicht (110) von einem ersten Leitfähigkeitstyp, eine zweite Halbleiterschicht (120) von einem zweiten Leitfähigkeitstyp, eine erste und eine zweite Stromverteilungsschicht (123, 132), und ein erstes und ein zweites Kontaktelement (127, 137). Die erste und die zweite Halbleiterschicht (110, 120) bilden einen Schichtstapel. Die erste Stromverteilungsschicht (123) ist auf einer von der zweiten Halbleiterschicht (150) abgewandten Seite der ersten Halbleiterschicht (140) angeordnet und mit der ersten Halbleiterschicht (110) elektrisch leitend verbunden. Die zweite Stromverteilungsschicht (132) ist auf der von der zweiten Halbleiterschicht (150) abgewandten Seite der ersten Halbleiterschicht (140) angeordnet und mit der zweiten Halbleiterschicht (120) elektrisch leitend verbunden. Das erste Kontaktelement (127) ist mit der ersten Stromverteilungsschicht (123) verbunden. Das zweite Kontaktelement (137) ist mit der zweiten ...

OPTOELEKTRONISCHES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS

Es wird ein optoelektronisches Halbleiterbauelement (1) angegeben umfassend:- einen optoelektronischen Halbleiterchip (2) mit einer ersten Hauptfläche (2A) und einer der ersten Hauptfläche (2A) gegenüberliegenden zweiten Hauptfläche (2B),- einen ersten Kontaktbereich (9) und einen zweiten Kontaktbereich (10), die an der zweiten Hauptfläche (2B) des Halbleiterchips (2) angeordnet sind und jeweils zumindest eine quer zur zweiten Hauptfläche (2B) angeordnete Seitenfläche (9A, 10A) aufweisen, wobei zumindest eine der Seitenflächen (9A, 10A) eine Verzahnungsstruktur (11) aufweist.Ferner wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements angegeben.

PHOTOELECTRIC LENGTH OR ANGLE MEASURING DEVICE

Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement

Eine Anordnung mit mindestens einem optoelektronischen Halbleiterbauelement weist eine zum Tragen des mindestens einen optoelektronischen Halbleiterbauelements geeignete Trägerelementanordnung auf. Die Anordnung weist einen aus einem Licht absorbierenden Kunststoff gebildeten Gehäusekörper auf, der an der Trägerelementanordnung angeordnet ist. Der Gehäusekörper umfasst einen erhöhten Bereich und einen zurückgesetzten Bereich. Zwischen dem erhöhten und dem zurückgesetzten Bereich ist eine schräge Flanke gebildet. Der zurückgesetzte Bereich reicht bis an das optoelektronische Halbleiterbauelement, um Reflexionen zu verringern.

Polarisierte Strahlung emittierender Halbleiterchip

Polarisierte Strahlung emittierender Halbleiterchip (1) mit- einer Strahlung erzeugenden aktiven Zone (3),- einem Polarisationsfilter (5), das eine erste Strahlung (S1) mit einer ersten Polarisation reflektiert und eine zweite Strahlung (S2) mit einer zweiten Polarisation transmittiert, wobei die Strahlung erzeugende aktive Zone (3) zwischen einer Strahlungsauskoppelfläche des Halbleiterchips (1) und dem Polarisationsfilter (5) angeordnet ist, und wobei ein Abstand d1zwischen der aktiven Zone (3) und dem Polarisationsfilter (5) derart eingestellt ist, dass eine von der aktiven Zone (3) in Richtung (V) der Strahlungsauskoppelfläche ausgesandte Strahlung (Su) mit der reflektierten ersten Strahlung (S1) interferiert, wobei der Halbleiterchip (1) eine Reflexionsschicht (7) aufweist, welche die zweite Strahlung (S2) reflektiert, wobei das Polarisationsfilter (5) zwischen der aktiven Zone (3) und der Reflexionsschicht (7) angeordnet ist, und wobei ein Abstand d2zwischen der aktiven Zone (3) und ...

Back-scattered light-free optical device and fabrication method

Vertical LED

The LED comprises a multilayered reflector108 comprising high refractive index transparent conductive layers (eg ZnO, ITO) and low refractive index transparent dielectric layers (eg MgF, SiN etc). The transparent conductive layer 106 extends over the reflector and electrically connects to the bottom conductive layer of the reflector directly so that a conduction path is present between the electrode 107 and the device layer 104.

Vertical light emitting diodes

A LIGHT EMITTING APPARATUS

SEMICONDUCTOR OPTICAL DEVICES

LIGHT-EMITTING DEVICE

SEMICONDUCTOR ARRANGEMENT AND OPTO-ELECTRONIC PLATE

SEMICONDUCTOR LED ELEMENT AND MANUFACTURING PROCESS

LICHTEMITTIERENDES SEMICONDUCTOR COMPONENT

LIGHT WITH ANIMAL END OF DEVICE AND INDICATOR

LIGHT EMITTING DIAMOND DEVICE

HIGH-RELIABILITY GROUP III-NITRIDE LIGHT EMITTING DIODE

Light-emitting or light-receiving semiconductor module and method of its manufacture

Microelectronic package having improved light extraction

LIGHT EMITTING DEVICE AND DISPLAY

The present invention is directed to a light source having a planar main surface capable of emitting a white light which comprises a blue LED, an optical guide plate having a planar main surface and an edge face getting injection of the light from said blue LED, and a coating material of transparent resin or glass containing fluorescent materials positioned between said blue LED and said optical guide plate, whereby the fluorescent materials can be exited by absorption of a part of the blue light from the blue LED to emit fluorescence light and the fluorescence light can be mixed with a remaining part of the blue light to make a white light in said optical guide plate. The light source of the present invention is useful in a white light emitting diode which is subject to less deterioration of emission characteristic even when used with high luminance for a long period of time.

SEMICONDUCTOR DEVICE HAVING A PASSIVATING LAYER

Semiconductor device having a passivating layer to reduce and stabilise the surface recombination rate. The device is characterized on the one hand in that an active region is covered by a passivating layer of polycrystalline semiconductor material which has the same conductivity type as and preferably approximately the same impurity concentration as the region, and on the other hand in that the energy gap of the material of the layer is preferably at least 80 millielectron volts larger than that of the material of the region. The invention may be applied to semiconductor devices operating via injection of minority charge carriers in particular in optoelectronic devices.

LIGHT EMITTING GALLIUM PHOSPHIDE DEVICE

SEMICONDUCTOR DEVICE HAVING AN ELECTROLUMINESCENT DIODE

EXTENDING THE OPERATING LIFE OF LIGHT EMITTING P-N JUNCTION DEVICES

GLASS COATING FOR SEMICONDUCTOR OPTICAL DEVICES

LIGHT-EMITTING OR LIGHT-RECEIVING SEMICONDUCTOR MODULE AND METHOD OF ITS MANUFACTURE

A semiconductor module (20) comprises twenty five semiconductor devices (10), for example, having photoelectric conversion function and arranged in a 5.times.5 matrix through an electrical connection mechanism comprising six connection leads (21-26), wherein the semiconductor devices (10) in each column are connected in series and the semiconductor devices (10) in each row are connected in parallel. Furthermore, a positive electrode terminal and a negative electrode terminal are buried in a light transmission member (28) of transparent synthetic resin and project to the outside. The semiconductor device (10) has a diffusion layer, a pn junction and one planar face on the surface of a spherical p-type semiconductor crystal, for example, wherein a positive electrode (6a) connected with the p-type semiconductor crystal and a negative electrode (6b) facing the positive electrode (6a) through the center are formed on the planar face.

LOW CADMIUM CONTENT NANOSTRUCTURE COMPOSITIONS AND USES THEREOF

Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

LED APPARATUS EMPLOYING NEODYMIUM BASED MATERIALS WITH VARIABLE CONTENT OF FLUORINE AND OXYGEN

An apparatus such as a lighting apparatus (110A, 110B, 110C, 110D) comprises at least one LED (or OLED) module (115), configured to generate a visible light such as white light, and at least one component such as optical component comprising a compound consisting essentially of the elements neodymium (Nd) and fluorine (F), and optionally including one or more other elements. The lighting apparatus (110A, 110B, 110C, 110D) is configured to provide a desired light spectrum by filtering the generated visible light using the compound. The at least one component can comprise a NdF xO y compound with values of x and y determining a content ratio F/O, which may be adjusted during manufacturing of the NdF xO y compound to provide desired output light parameters of the apparatus including at least a desired output light spectrum realized by filtering the generated visible light using the NdF xO y compound.

METHOD OF MOUNTING SEMICONDUCTOR CHIPS

NITRIDE SEMICONDUCTOR DEVICE HAVING SUPPORT SUBSTRATE AND ITS MANUFACTURING METHOD

The present invention relates to an opposed terminal structure having a supporting substrate having conductivity. A nitride semiconductor having a light-emitting layer is also provided along with a first terminal formed on one face of the nitride semiconductor and a second terminal formed on another face of the nitride semiconductor. The first terminal is formed in a pattern of one of a rectangular shape, a plurality of lines, a square shape, a grid pattern, a plurality of dots, a rhombus, a parallelogram, a mesh shape, a striped shape, and a ramose shape branching from one into a plurality of branches. The thermal expansion coefficient of the supporting substrate is approximately the same as the thermal expansion coefficient of the nitride semiconductor. The supporting substrate is formed of nitride semiconductor.

Verfahren zum Behandeln einer einen pn-Übergang aufweisenden, lichtemittierenden Halbleitervorrichtung

Halbleiteranordnung mit elektrolumineszierendem pn-Übergang, Verfahren zu deren Herstellung und deren Verwendung in einer Fernmessvorrichtung

OPTICAL SEMICONDUCTOR COMPONENT WITH A DIELECTRIC PROTECTION COAT.

LIGHT EMITTING DIODE ARRANGEMENT WITH LIGHT EMITTING DIODE AND INTEGRATION FUNCTIONAL MONITORING ELEMENT.

LIGHT EMITTING DIODE ARRANGEMENT WITH LIGHT EMITTING DIODE AND INTEGRATION FUNCTIONAL MONITORING ELEMENT.

УСТРОЙСТВО ДЛЯ ОПРЕДЕЛЕНИЯ ХИМИЧЕСКИХ ВЕЩЕСТВ В АНАЛИЗИРУЕМОЙ СРЕДЕ

Изобретение, в целом, относится к области полупроводниковых устройств. В частности, настоящее изобретение относится к полупроводниковым диодным источникам и приемникам инфракрасного излучения, работающим в средней инфракрасной области 1,6-5,0 мкм, а также устройствам для определения химических веществ в анализируемой среде, содержащим такие диодные источники и приемники инфракрасного излучения. Предлагаемые устройства могут быть использованы для определения наличия и/или содержания химических веществ, например, таких как метан, диоксид углерода и др. Предложен полупроводниковый диод для среднего инфракрасного диапазона спектра, содержащий по меньшей мере один полупроводниковый чип, выполненный на основе гетероструктуры, имеющий токопроводящие контакты и размещенный на теплопроводной основе, а также оптическое покрытие из материала на основе сложной полупроводниковой халькогенидной системы, содержащей As, S, Se, причем халькогенидная система дополнительно содержит по меньшей мере один галоген ...

DEVICE FOR DETERMINING CHEMICAL SUBSTANCES IN ANALYZED MEDIUM

Light Emitting Diode, Method Of Manufacturing The Same, And Method Of Manufacturing Light Emitting Diode Module

Micro LED display device

LIGHT EMITTING DIODE CHIP

Passivation for a semiconductor light emitting device

Passivation layer (34) is disposed over a side of a semiconductor structure (20) including a light emitting layer (24) disposed between an n-type region (22) and a p-type region (26). A material (38) configured to adhere to an underfill (58) is disposed over an etched surface of the semiconductor structure.

Method Manufacturing Light Emitting Diode Having Supporting Lay7Er Attached To Temporary Adhesive

The light-emitting diode

Flip-chip LED (chip-on-LED chip) chip

Light emitting package

Laser lift-off led with improved light extraction

A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.

Quantum dot film and manufacturing method, quantum dot device thereof

Light emitting diode epitaxial wafer, light emitting diode module and manufacturing method thereof

Semiconductor chip with vertical structure

The invention discloses a vertical semi-conductor chip without a golden thread. The structure of the invention comprises a metallized chip (comprising: a first sheet metal, a second sheet metal, a first electrode, a second electrode and a conductive bolt), a semi-conductor epitaxy film superposed on the first sheet metal, a passivation layer covered on the metallized chip and the semi-conductor epitaxy film, and a graphical electrode. The first sheet metal and the second sheet metal are electrically connected with the first electrode and the second electrode respectively through the conductive bolt. The passivation layer is provided with windows above the semi-conductor epitaxy film and the second sheet metal. The graphical electrode is superposed on the semi-conductor epitaxy film through the window of the passivation layer above the semi-conductor epitaxy film and extends toward the second sheet metal; and is superposed on the second sheet metal through the window of the passivation layer ...

Vertical structure light emitting diode chip with low cost and preparation method thereof

The invention discloses a vertical structure light emitting diode chip with low cost and a preparation method thereof. The structure of the chip comprises a base plate layer. An epitaxial layer growing on a substrate is transferred to the base plate layer. A barrier protection layer, a dilution protection layer and an adhesive layer are orderly arranged from top to bottom between the base plate layer and the epitaxial layer. An N electrode is on the epitaxial layer. By using the dilution protection layer and the barrier protection layer which are formed by the overlapping of many kinds of metal or alloy, a problem that low cost and low melting point metal which is taken as a bonding layer material has the problems of poor corrosion resistance ability, strong diffusion ability, easy destroying of the structure and photoelectric performance of the light emitting diode and the like is overcome, thus the dilution protection layer and the barrier protection layer can replace noble metal to be ...

Light emitting element as well as manufacturing method and light emitting method thereof

The invention discloses a light emitting element as well as a manufacturing method and a light emitting method thereof. The light emitting element comprises a light emitting thin film and a metal layer, wherein the light emitting thin film is made of a material which has a chemical formula of (Y1-mGdm)3-xTbx(Al1-nGan)5O12; m is greater than or equal to 0 and is less than or equal to 1, n is greater than or equal to 0 and is less than or equal to 1, and x is greater than 0 and is less than or equal to 0.3; and the metal layer is positioned on the surface of the light emitting thin film and has a metal microstructure. The manufacturing method comprises the following steps of: preparing the light emitting thin film; forming the metal layer on the light emitting thin film; annealing the metal layer to form the metal microstructure; and finally cooling to obtain the light emitting element. When the light emitting emits light, cathode ray is emitted to the metal layer, and surface plasma is formed ...

Chip structure as LED well as preparation method thereof as well LED as giant transferring method using the same chip structure

The light-emitting diode chip and its manufacturing method

Low optical loss flip chip solid state lighting device

Light emitting diode and manufacturing method thereof

Provided is a light emitting diode. The light emitting diode comprises a substrate, a semiconductor layer formed on the substrate, a transparent conductive layer formed on the semiconductor layer, a transparent protective layer coating the transparent conductive layer, and a phosphor layer, wherein multiple holes uniformly arranged at intervals are formed on the transparent protective layer through etching along a direction towards the substrate so as to expose the transparent conductive layer; the phosphor layer covers the transparent protective layer and does not cover the holes; and light with a first wavelength, which is directly emitted by the semiconductor layer through the holes, together with light with a second wavelength, which is generated by exciting the phosphor layer, forms white light in a mixing mode. The invention also provides a manufacturing method of a light emitting diode.

Using the method of forming the surface of the micro-plasma

For producing the at least one opto-electronic semiconductor chip method

Optoelectronic component and is used in the method of manufacturing optoelectronic component

... 本发明涉及种光电子构件(101，301，501)，其包括衬底(103，303，503)，在所述衬底上施加有半导体层序列(105，305，505)，其中半导体层序列(105，305，505)具有用于标识构件(101，301，501)的至少个标识件(115，315)。本发明还涉及种用于制造光电子构件(101，301，501)的方法。 ...

Light emitting diode and manufacturing method thereof

A GaN-based LED and its preparation method

Light-emitting device

A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable ofheightening a reflection coefficient of a wavelength of light emitted from the light-emitting element.

Varistor and light emitting device

In a varistor (V1), a radiation portion (14) contains the same metal oxide composition as ZnO of a main composition of a varistor element (15), and the varistor element (15) and radiation portion (14) are used in common. When sintering, Ag contained in the radiation portion (14) is diffused to the grain boundary of ZnO of the main composition of the varistor element (15) near the interface between a face (14a) and (15a). Thereby, a crack scarcely produces between the varistor portion (11) and radiation portion (14) in the varistor (V1) when sintering (or debinding), then the joining strength between the varistor portion (11) and radiation portion (14) can be sufficiently kept. Therefore, the heat transmitted to the radiation portion (11) can be efficiently radiated through a transmission route from the face (14a) in the radiation portion (14) to a face (14b), a face (14c), and a face (14d).

High-heat-resistant semiconductor device

Phosphor based light source having a flexible short pass reflector

Light emitting diode

Light emitting diode for harsh environments

C-shaped anode Micro-LED device and preparation method thereof

The invention discloses a Micro-LED device with a C-shaped anode and a preparation method of the Micro-LED device, and relates to the technical field of Micro-LED display. On the basis of a conventional vertical Micro-LED device, after a deposition passivation layer is excavated from the side wall of PGaN, a metal electrode is deposited, so that the C-shaped anode is formed. A side wall electric field is balanced by using a horizontal electrode, namely, a transverse electric field caused by a side wall trap is inhibited, so that the radiation recombination rate integral on the unit size of a quantum well of the Micro-LED device is increased, and the phenomenon that the radiation recombination rate caused by the side wall trap is reduced along with the reduction of the size is inhibited, namely, the small-size effect of the Micro-LED device is inhibited.

Miniature LED device preparation method, miniature LED device and display device

The invention provides a miniature LED device preparation method, a miniature LED device and a display device. The method comprises the following steps: providing a micro LED structure which sequentially comprises a substrate, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer from bottom to top; etching is carried out from the second semiconductor layer until the substrate is exposed, so that a plurality of mesa structures sharing the same substrate are formed, and each mesa structure comprises the first semiconductor layer and the second semiconductor layer which are exposed; arranging a metal layer on the exposed first semiconductor layer and second semiconductor layer of each mesa structure as an electrode to obtain a first intermediate structure; an extinction layer is arranged on the first intermediate structure, and a contact hole is formed in the extinction layer to expose the metal layer, so that a second intermediate structure is ...

Light-emitting module and display device

The invention discloses a light-emitting module and a display device. The light-emitting module comprises a plurality of light-emitting elements which are arranged at intervals. The wiring layer is formed on the plurality of light-emitting elements and is used for being electrically connected with the light-emitting elements; the conductive pad is formed on one side, far away from the light-emitting element, of the wiring layer and is electrically connected with the wiring layer; the conductive protection layer is located between the conductive pad and the wiring layer. The conductive protection layer is additionally arranged between the wiring layer and the conductive bonding pad, so that the part, used for being connected with the conductive bonding pad, in the wiring layer can be effectively prevented from being oxidized, the phenomenon that the conductive bonding pad is likely to fall off or poor contact is likely to occur due to the fact that the wiring layer is oxidized is improved ...

Display panel and preparation method thereof

The invention discloses a display panel and a preparation method of the display panel. The display panel comprises a substrate; the light-emitting elements are arranged on one side of the substrate base plate, the light-emitting elements are provided with first surfaces deviating from the substrate base plate, and the heights of the first surfaces of at least part of the light-emitting elements are different in the direction perpendicular to the plane where the substrate base plate is located; the light-transmitting heightening layer is arranged on one side of the first surfaces of the light-emitting elements except the highest light-emitting element and forms a second surface, so that the second surface, away from the substrate, of the light-transmitting heightening layer is flush with the first surface of the highest light-emitting element in the direction perpendicular to the plane where the substrate is located. According to the display panel, the light-transmitting heightening layer ...

Display module glue filling method and display module repairing method

The invention discloses a display module glue filling method, which is characterized in that a first packaging body is packaged on a lamp bead of a display module, and the first packaging body is provided with a gap; the glue filling method for the display module comprises the following steps: filling the gap with packaging glue; the packaging glue is cured to form a second packaging body, the lowest position of the upper surface of the second packaging body is lower than the surface of the first packaging body, and the highest position of the upper surface of the second packaging body is lower than or equal to the surface of the first packaging body; protective films are attached to the surfaces of the first packaging body and the second packaging body, each protective film comprises an elastic adhesive layer and a light-transmitting layer, and the elastic adhesive layer is the bottom layer of the protective film. Compared with the prior art, the method is simple in process and low in ...

PHOTOVOLTAIC DEVICE COMPRISING AT LEAST ONE COATING LAYER ON AT LEAST ONE PHOTOVOLTAIC MODULE WITH WEAR INDICATOR

Illumination device with remote luminescent material

The invention provides an illumination device comprising a light source and a transmissive arrangement. The light source is arranged to generate light source light and comprises a light emitting device (LED), arranged to generate LED light and a carrier comprising a first luminescent material. The carrier is in contact with the LED and the first luminescent material is arranged to convert at least part of the LED light into first luminescent material light. The transmissive arrangement of a second luminescent material is arranged remote from the light source and is arranged to convert at least part of the LED light or at least part of the first luminescent material light and/or at least part of the LED light. The invention overcomes current limitations of remote luminescent material systems in spot lighting. In addition, an extremely simple way of realizing light sources with various correlated colour temperatures is allowed, based on just a single type of white (or whitish) light source in combination with various (red-orange) remote luminescent materials.

Light emitting device having a lateral passibation layer

Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.

White led device and manufacturing method thereof

The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.

Light-emitting devices with substrate coated with optically denser material

A light-emitting device includes a transparent substrate with a light emitting structure formed on one side of the substrate and a transparent layer formed on the opposing side of the substrate. The refractive index of the transparent layer is greater than the refractive index of the substrate. A light-emitting device includes a package cup having a reflective sidewall and a light emission surface and a light emitting diode (LED) embedded in the package cup. The LED comprises a transparent substrate and a transparent layer formed on the substrate. The reflective sidewall has a first portion in a central area of the package cup and a second portion in a peripheral area of the package cup, the first portion reflects light emitted from the transparent layer to the second portion and, then, the second portion further reflects the light received from the first portion to the light emission surface of the package cup.

High-brightness light emitting diode

A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, a trench penetrating the second semiconductor layer and the active layer thereby exposing a portion of the first semiconductor layer, an first electrode disposed at the bottom of the trench, an insulating layer covering the trench and the first electrode, and a second electrode disposed overlying the insulating layer in parallel with the first electrode, wherein the second electrode overlaps with the first electrode.

Semiconductor light-emitting device manufacturing method and semiconductor light-emitting device

There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

Protection for the epitaxial structure of metal devices

Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes a housing main body and at least one optoelectronic semiconductor chip mounted on the housing main body. In operation, the optoelectronic semiconductor chip emits primary radiation including an ultraviolet radiation fraction. The semiconductor component also includes a filter medium that absorbs the ultraviolet radiation fraction and is located at least in part between the semiconductor chip and the housing main body and/or between the semiconductor chip and an optical component.

Optoelectronic semiconductor component and method for producing an inorganic optoelectronic semiconductor component

An optoelectronic semiconductor component includes a carrier and at least one semiconductor layer sequence. The semiconductor layer sequence includes at least one active layer. The semiconductor layer sequence is furthermore mounted on the carrier. The semiconductor component furthermore includes a metal mirror located between the carrier and the semiconductor layer sequence. The carrier and the semiconductor layer sequence project laterally beyond the metal mirror. The metal mirror is laterally surrounded by a radiation-transmissive encapsulation layer.

Pixelated led

A pixelated light emitting diode (LED) and a method for pixelating an LED are described. The pixelated LED includes two or more monolithically integrated electroluminescent elements disposed adjacent each other on a substrate, wherein at least a portion of each electroluminescent element immediately adjacent the substrate includes an inverted truncated pyramidal shape. The method for pixelating an LED includes selectively removing material from the major surface of an LED to a depth below the emissive region, thereby forming an array of inverted truncated pyramid shapes. The efficiency of the pixelated LEDs can be improved by incorporating the truncated pyramidal shape. Additionally, the crosstalk between adjacent LED pixels can be reduced by incorporating the truncated pyramidal shape.

Light-emitting device

Disclosed is a light-emitting device comprising: a carrier comprising: a first side and a second side; a semiconductor light-emitting stack layer on the first side of the carrier, the semiconductor light-emitting stack layer comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer ; and a first electrode structure electrically coupled to the second conductivity type semiconductor layer, the first electrode structure comprising: a main electrode surrounding the semiconductor light-emitting stack layer; an extending electrode extending from the main electrode onto the second conductivity type semiconductor layer; and an electrode pad coupling to the main electrode.

Light emitting device

A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.

Light-Emitting Device and Display Device

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Light emitting diode with nanostructures and method of making the same

A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.

Suspensions for protecting semiconductor materials and methods for producing semiconductor bodies

A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Led mesa sidewall isolation by ion implantation

A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

Semiconductor light-emitting structure

A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

Semiconductor light emitting device and head mount display device

A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the substrate, and a second insulation layer disposed between the first insulation layer and the first metal layer.

Optoelectronic Semiconductor Chip and Method for Fabricating an Optoelectronic Semiconductor Chip

An optoelectronic semiconductor chip, comprising: a radiation out-coupling side ( 102, 910 ); a contact connection ( 104, 1000 ); a metal contact material ( 210, 912 ) applied to the radiation out-coupling side ( 102, 910 ) and a metal conductive connection ( 106, 500, 914 ) applied to the contact material ( 210, 912 ) and which is connected to the contact connection ( 104, 1000 ).

Light-emitting diode package

A light-emitting diode (LED) package including a substrate, an LED chip, a polarizer, and a supporter is provided. The LED chip is disposed on the substrate. The polarizer is disposed above the LED chip. The supporter is disposed on the substrate for supporting the polarizer.

Methods and devices for rescuing a distressed diver

The invention discloses devices and methods for identifying a diver in distress and initiating a rescue response. Specifically, embodiments of the present invention allow for identification of a diver who is not breathing properly and in response giving local stimuli to allow the diver to response. Should he/she not respond, the instant invention will initiate steps to bring the diver back to the water surface and alert others as to his/her need of assistance.

Semiconductor light emitting device and manufacturing method of the same

There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

Light-emitting semiconductor device and package thereof

The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

Light emitting diodes including barrier sublayers

Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Light emitting diode having electrode pads

The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer. The first light emitting cells are connected in series to the second light emitting cells.

Light emitting device and lighting system with the same

Embodiments provide a light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a metal filter of an irregular pattern on the light emitting structure, and openings between the irregular patterns in the metal filter.

Light emitting device, light emitting device package including the same and lighting system

Disclosed is a light emitting device including a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode disposed on the first conductive type semiconductor layer, a second electrode disposed on the second conductivity type semiconductor layer, and a low temperature oxide film disposed on the light emitting structure, with an irregular thickness.

Package and Manufacturing Method of the Same

Provided are a package including a first conductive layer on a patterned layer, an insulating layer on the patterned layer burying the first conductive layer, a second conductive layer on an outer surface of the insulating layer, and a third conductive layer in the insulating layer electrically connecting the first conductive layer with the second conductive layer. A substrate is formed by printing or coating a paste- or ink-type insulator and conductor on a patterned layer formed on a sapphire wafer. No void is created between the substrate and LED chip, thus enhancing attachment strength. The ceramic-containing insulator is cured at a low temperature, thereby minimizing contraction of and damage to the wafer when the ceramic is fired. Printing methods utilizing viscous paste or ink solves problems with co-planarity of substrate that occur in existing wafer-to-wafer bonding processes and renders several steps of the existing substrate manufacturing process unnecessary.

Optoelectronic Component and Method for Producing an Optoelectronic Component

The invention concerns an optoelectronic component ( 1 ) for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. At least one first semiconductor chip ( 3 ) for emitting electromagnetic radiation in a first spectral range is provided on a carrier ( 2 ). Furthermore, at least one second semiconductor chip ( 4, 4 a, 4 b ) for emitting electromagnetic radiation in a second spectral range is provided on the carrier ( 2 ). The first and the second spectral ranges differ from one another. The at least one first semiconductor chip ( 3 ) and the at least one second semiconductor chip ( 4, 4 a, 4 b ) are arranged in a single package. The at least one first semiconductor chip ( 3 ) is optically isolated from the at least one second semiconductor chip ( 4, 4 a, 4 b ) by a barrier ( 5 ). The at least one first semiconductor chip ( 3 ) and the at least one second semiconductor chip ( 4, 4 a, 4 b ) are in each case arranged centosymmetrically about a common center o(Z) of symmetry.

Light emitting device

A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer disposed to cover a side of the first semiconductor layer and a side of the active layer, and a first electrode for connecting the second semiconductor layers of more than one of the light emitting cells to each other, wherein the protective layer includes protruding portions extending to an inside of each of the light emitting cells from the side of the first semiconductor layer and the side of the active layer.

Apparatus, method to enhance color contrast in phosphor-based solid state lights

The efficiency and color contrast of a lighting device may be improved by using wavelength shifting material, such as a phosphor, to absorb less desired wavelengths and transmit more desired wavelengths. A double-notch reflective filter may pass desired wavelengths such as red and green, while returning or reflecting less desired wavelengths (blue and yellow) away from an optical exit back toward wavelength shifting material and re-emitted as light of more desirable wavelengths.

Led light source, led backlight, liquid crystal display device and tv reception device

In order to provide an LED light source and an LED backlight in which color variations in the chromaticity of light emitted from a light emitting surface are not produced and in which the brightness on a display screen is made uniform, an LED light source provided with an LED chip that emits light of a predetermined color and a sealing resin that contains a fluorescent material are included. The fluorescent material includes a plurality of fluorescent materials that emit excitation light of a plurality of different wavelengths within the excitation light wavelength range of the predetermined color, and the light emitting surface is formed in the shape of a diffusion lens portion that adjusts the light emitted and distributed. Also, the application regions of the adjacent LED light sources overlap each other, and thus it is possible to obtain an LED backlight.

Light emitting device and light unit having the same

A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess.

Method for making light emitting diode

A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

LED DEVICE AND METHOD FOR MANUFACTURING SAME

An object of the present invention is to provide an LED device which prevents a sealing material from being colored even under high-temperature and high-humidity environment, and suppresses the decrease in luminescent efficiency. 1. An LED device comprising:a substrate;an LED element provided on the substrate;a cerium oxide-dispersed composition layer containing cerium oxide in an amount of 0.005 parts by weight or more and 0.03 parts by weight or less with respect to 100 parts by weight of a silicone resin, and having a thickness of 10 μm or more and 60 μm or less, the layer covering the LED element; anda sealing material containing no cerium oxide, containing a silicone resin as its main constituent, and covering the cerium oxide-dispersed composition layer for sealing the LED element.2. The LED device according to claim 1 , wherein the sealing material comprises a fluorescent material.3. The LED device according to claim 2 , wherein the LED element is a blue LED.4. A method for manufacturing an LED device claim 2 , the method comprising the steps of:providing an LED element on a substrate;covering the LED element with a cerium oxide-dispersed composition layer containing cerium oxide in an amount of 0.005 parts by weight or more and 0.03 parts by weight or less with respect to 100 parts by weight of a silicone resin, and having a thickness of 10 μm or more and 60 μm or less; andcovering the cerium oxide-dispersed composition layer with a sealing material containing no cerium oxide and containing a silicone resin as its main constituent, for sealing the LED element. This is a continuation of International Application No. PCT/JP2011/007003, with an international filing date of Dec. 15, 2011, which claims priority of Japanese Patent Application No. 2010-281591, filed on Dec. 17, 2010, the contents of which are hereby incorporated by reference.The present invention relates to an LED device in which a cerium oxide-dispersed composition with cerium oxide dispersed ...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A nitride-based semiconductor light-emitting device includes a GaN substrate , of which the principal surface is an m-plane , a semiconductor multilayer structure that has been formed on the m-plane of the GaN-based substrate , and an electrode arranged on the semiconductor multilayer structure . The electrode includes an Mg layer , which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 1. A nitride-based semiconductor device comprising:a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; andan electrode that is arranged on the p-type semiconductor region; wherein{'sub': x', 'y', 'z, 'the p-type semiconductor region is made of an AlInGaN semiconductor (where x+y+z=1, x≧0, y≧0, z>0);'}the electrode comprises an Mg layer and a metal layer;the Mg layer is in contact with the p-type semiconductor region;the Mg layer consists of magnesium, gallium and nitride;the Mg layer has a thickness of not more than 45 nanometers;the Mg layer is interposed between the metal layer and the p-type semiconductor region;the metal layer is made of at least one metal that would make an alloy with Mg less easily than Au; anda concentration of gallium included in the Mg layer is greater than a concentration of nitride included in the Mg layer.2. The nitride-based semiconductor device according to claim 1 , whereinthe Mg layer has a thickness of not less than 2 nanometers.3. The nitride-based semiconductor device according to claim 1 , whereinthe metal layer is made of at least one metal selected from the group consisting of Pt, Mo, and Pd.4. The nitride-based semiconductor device according to claim 2 , whereinthe metal layer is made of at least one metal selected from the group consisting of Pt, Mo, and Pd.5. The nitride-based semiconductor device according to claim 1 , further comprisinga metal alloy layer including Mg and the at least one ...

BROAD-AREA LIGHTING SYSTEMS

In accordance with certain embodiments, illumination systems are formed by aligning light-emitting elements with optical elements and/or disposing light-conversion materials on the light-emitting elements, as well as by providing electrical connectivity to the light-emitting elements 160.-. (canceled)61. A light-emitting device , comprising a substrate;a plurality of electrical traces disposed on a first surface of the substrate;a plurality of light-emitting elements disposed over the first surface of the substrate, each light-emitting element being electrically connected to at least two electrical traces on the first surface of the substrate;an optical substrate comprising a plurality of cavities in a first surface thereof;wherein the first surface of the substrate is adjacent to the first surface of the optical substrate and each light-emitting element is (i) at least partially inserted into one of the cavities in the optical substrate, and (ii) at least partially surrounded by a light-conversion material.62. The light-emitting device of claim 61 , wherein each of the light-emitting elements comprises a bare-die light-emitting diode.63. The light-emitting device of claim 62 , wherein each bare-die light-emitting diode comprises one or more semiconductor materials selected from the group consisting of silicon claim 62 , InAs claim 62 , AlAs claim 62 , GaAs claim 62 , InP claim 62 , AlP claim 62 , GaP claim 62 , InSb claim 62 , GaSb claim 62 , AlSb claim 62 , GaN claim 62 , AlN claim 62 , InN claim 62 , and mixtures and alloys thereof64. The light-emitting device of claim 61 , wherein each of the light-emitting elements comprises a packaged light-emitting diode.65. The light-emitting device of claim 64 , wherein each packaged light-emitting diode comprises one or more semiconductor materials selected from the group consisting of silicon claim 64 , InAs claim 64 , AlAs claim 64 , GaAs claim 64 , InP claim 64 , AlP claim 64 , GaP claim 64 , InSb claim 64 , GaSb claim ...

LIGHT EMITTING DEVICE

Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum. 1. A light emitting device comprising:a gallium oxide layer over a gallium oxide substrate;a gallium nitride layer over the gallium oxide layer; anda light emitting structure over the gallium nitride layer.2. The light emitting device of claim 1 , wherein the gallium oxide layer comprise a gallium aluminum oxide layer.3. The light emitting device of claim 2 , wherein the gallium aluminum oxide layer comprises GaAlO(0x≦1 claim 2 , 0y≦1 claim 2 , 0z≦1).4. The light emitting device of claim 2 , wherein the gallium aluminum oxide layer has a thickness of 1 μm or less.5. The light emitting device of claim 1 , wherein the gallium nitride layer is inter-disposed between the gallium oxide layer and the light emitting structure.6. The light emitting device of claim 1 , wherein the gallium oxide layer is directly disposed on the gallium oxide substrate.7. The light emitting device of claim 1 , wherein the light emitting structure does not contact the gallium nitride layer.8. The light emitting device of claim 1 , wherein the light emitting structure does not contact the gallium oxide layer.9. The light emitting device of claim 1 , wherein the light emitting structure does not contact the gallium oxide substrate.10. The light emitting device of claim 1 , wherein an first interfacial adhesion between the gallium oxide layer and the gallium nitride layer is stronger than a second interfacial adhesion between the gallium oxide substrate and the light emitting structure.11. The light emitting device of claim 1 , wherein the gallium nitride layer comprises a gallium aluminum nitride layer.12. The light emitting device of claim 11 , wherein the gallium ...

SEALING FILM FORMING METHOD, SEALING FILM FORMING DEVICE, AND LIGHT-EMITTING DEVICE

A sealing film forming method is capable of forming a sealing film having high moisture permeability resistance in a shorter time and at lower cost. The sealing film forming method for forming a sealing film that seals an EL device includes forming a first inorganic layer on a surface of the EL device ; forming a hydrocarbon layer on the first inorganic layer ; flattening the hydrocarbon layer by softening or melting the hydrocarbon layer ; curing the hydrocarbon layer ; and forming a second inorganic layer thicker than the first inorganic layer on the hydrocarbon layer after curing the hydrocarbon layer 1. A sealing film forming method for forming a sealing film that seals a light-emitting device , the sealing film forming method comprising:forming a first inorganic layer on a surface of the light-emitting device;forming a hydrocarbon layer on the first inorganic layer;flattening the hydrocarbon layer by softening or melting the hydrocarbon layer;curing the hydrocarbon layer; andforming a second inorganic layer thicker than the first inorganic layer on the hydrocarbon layer after curing the hydrocarbon layer.2. The sealing film forming method of claim 1 ,wherein an amorphous carbon layer is formed on the first inorganic layer after forming the first inorganic layer and before forming the hydrocarbon layer.3. The sealing film forming method of claim 1 ,wherein an amorphous carbon layer is formed on the hydrocarbon layer after curing the hydrocarbon layer and before forming the second inorganic layer, or in parallel with curing the hydrocarbon layer.4. The sealing film forming method of claim 1 ,wherein at least one of the first inorganic layer and the second inorganic layer is formed of a silicon nitride film, a silicon oxide film or an aluminum oxide film.5. The sealing film forming method of claim 1 ,wherein the first inorganic layer and the second inorganic layer are formed by performing a plasma CVD.6. The sealing film forming method of claim 1 ,wherein the ...

MICRO/NANO COMBINED STRUCTURE, MANUFACTURING METHOD OF MICRO/NANO COMBINED STRUCTURE, AND MANUFACTURING METHOD OF AN OPTICAL DEVICE HAVING A MICRO/NANO COMBINED STRUCTURE INTEGRATED THEREWITH

A micro/nano combined structure, a manufacturing method of a micro/nano combined structure, and a manufacturing method of an optical device having a micro/nano combined structure integrated therewith, the method comprising: forming a micro structure on a substrate; depositing a metal thin film on the substrate on which the micro structure is formed; heat treating and transforming the metal thin film into metal particles; and using the metal particles as a mask to form a non-reflective nanostructure having a frequency below that of light wavelengths and a sharp wedge-shaped end, on the top surface of the substrate on which the micro structure is formed, and etching the front surface of the substrate on which the micro structure is formed. The manufacturing process is simple, light reflectivity that occurs wherein a difference in refractive indices of air and semiconductor material can be minimized, and is easily applied to the optical device field. 1. A micro/nano combined nanostructure comprising a microstructure formed on a substrate ,wherein a sharp wedge-shaped anti-reflective nanostructure with a subwavelength period is formed on a top surface of the substrate having the microstructure formed thereon.2. The micro/nano combined nanostructure of claim 1 , wherein the anti-reflective nanostructure is formed by heat treating a metal thin film deposited on the substrate having the microstructure formed thereon to transform into metal particles and etching an entire surface of the substrate having the microstructure formed thereon by using the metal particles as a mask.3. The micro/nano combined nanostructure of claim 1 , wherein the anti-reflective nanostructure is formed by heat treating a buffer layer and a metal thin film sequentially deposited on the substrate having the microstructure formed thereon to transform into metal particles claim 1 , blanket etching the buffer layer by using the metal particles as a mask to form a nanostructured buffer layer claim 1 , ...

Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer ( 2 ), arranging a p-conducting layer ( 4 ) on the n-conducting layer ( 2 ), arranging a metal layer sequence ( 5 ) on the p-conducting layer ( 4 ),arranging a mask ( 6 ) at that side of the metal layer sequence ( 5 ) which is remote from the p-conducting layer ( 4 ),in places removing the metal layer sequence ( 5 ) and uncovering the p-conducting layer ( 4 ) using the mask ( 6 ), and in places neutralizing or removing the uncovered regions ( 4 a ) of the p-conducting layer ( 4 ) as far as the n-conducting layer ( 2 ) using the mask ( 6 ), wherein the metal layer sequence ( 5 ) comprises at least one mirror layer ( 51 ) and a barrier layer ( 52 ), and the mirror layer ( 51 ) of the metal layer sequence ( 5 ) faces the p-conducting layer ( 4 ).

Yttrium aluminum garnet phosphor, method for preparing the same, and light-emitting diode containing the same

The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I): 206. The yttrium aluminum garnet phosphor material of claim 1 , wherein 0.06≦b≦..306. The yttrium aluminum garnet phosphor material of claim 1 , wherein 0.2≦b≦..4. The yttrium aluminum garnet phosphor material of claim 1 , wherein M is at least one selected from the group consisting of cerium claim 1 , terbium claim 1 , and europium.5. The yttrium aluminum garnet phosphor material of claim 1 , wherein M is Ce.6. The yttrium aluminum garnet phosphor material of claim 1 , which is an yttrium aluminum garnet phosphor ceramic plate.7. A method of manufacturing an yttrium aluminum garnet phosphor material claim 1 , comprising:(A) providing a precursor powder that includes yttrium, aluminum and a metal, where the metal is at least one selected from the group consisting of Ce, Dy, Gd, Eu, Tb, La, Pr, Nd and Sm;(B) pre-sintering the precursor powder to obtain a phosphor precursor;(C) adding a silicon precursor in the phosphor precursor; and(D) sintering a mixture of the silicon precursor and the phosphor precursor to obtain the yttrium aluminum garnet phosphor material.8. The method of claim 7 , wherein the phosphor precursor is prepared by a process including chemical co-precipitation method claim 7 , solid state reaction method claim 7 , sol-gel method claim 7 , spray pyrolysis method claim 7 , combustion method claim 7 , hydrothermal synthesis claim 7 , sintering method or microwave-assisted combustion method.9. The method of claim 7 , wherein the step (A) is performed by providing and mixing an aluminum precursor claim 7 , an yttrium precursor and a metal precursor to form the precursor powder.10. The method of claim 9 , wherein the aluminum precursor is aluminum nitrate or aluminum oxide claim 9 , the yttrium precursor ...

Radiation-emitting component

A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.

DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. 1. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps offorming a pixel electrode covered by a base film on a substrate;forming a semiconductor film over the base film;forming a gate insulating film over the semiconductor film;forming a gate electrode over the gate insulating film;forming an impurity region at the semiconductor film;forming a first insulating nitride film over the gate electrode;forming an organic resin film over the first insulating nitride film;forming a first opening portion at the organic resin film over the impurity region;forming a second insulating nitride film to cover the first opening portion;forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion;forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion:wherein in forming the first opening portion, the organic ...

Fabrication System and Manufacturing Method of Light Emitting Device

The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed. 128-. (canceled)29. A manufacturing method for a light emitting device comprising step of:forming a film containing an organic compound over a substrate in a film formation chamber by relatively moving an evaporation source holder provided with the organic compound,wherein the evaporation source holder contains a plurality of containers being arranged in a longitudinal direction of the evaporation source holder, andwherein in the evaporation source holder, evaporation centers of adjacent two containers are crossed each other and an evaporation material sublimated from the adjacent two containers is collided with each other.30. The manufacturing method according to claim 29 , wherein the evaporation source holder contains an even number of containers.31. The manufacturing method according to claim 29 , wherein the evaporation source holder is moved perpendicular to or in parallel to a side of the substrate.32. The manufacturing method according to claim 29 , wherein a movement direction of the evaporation source holder is a same as the longitudinal direction of the ...

METHOD FOR FORMING A LIGHT CONVERSION MATERIAL

A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added. 1. A light emitting diode (LED) assembly , comprising:an LED;a cover over the LED, wherein the cover comprises a material having a desired transparency to light, wherein the cover has an exposed surface;a conversion coating embedded in the cover; andan encapsulant encasing the conversion coating, the cover and the LED.2. The assembly of wherein the cover comprises silicone claim 1 , the exposed surface is spaced apart from the LED and the conversion coating comprises a phosphor layer at the surface of the exposed surface spaced apart from the LED.3. The assembly of wherein at least a portion of the surface of the cover has a partially spherical shape and the phosphor layer conforms uniformly to partially spherical shape.4. The assembly of claim 1 , wherein the cover is a first cover and the conversion coating is a first conversion coating claim 1 , and wherein the system further comprises a second cover over the first conversion coating and a second conversion coating on the second cover.5. The assembly of wherein the first conversion coating emits light at a first frequency and the second conversion coating emits light at a second frequency different than the first frequency.6. The assembly of wherein the first cover has a partially spherical shape and the second cover has a spherical shape concentric with the first cover.7. The assembly of wherein the first conversion coating comprises a first phosphor and the second conversion coating comprises a second phosphor different than the first phosphor.8. ...

Led module

An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount substrate 210 . The module also includes white resin 280 that does not transmit light from the semiconductor layer 220 and that covers at least part of a side of the sub-mount substrate 210 , where the side is connected to the surface on which the semiconductor layer 220 is laminated. These arrangements enhance the brightness of the LED module 101.

LIGHT EMITTING DIODES WITH ENHANCED THERMAL SINKING AND ASSOCIATED METHODS OF OPERATION

Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink. 1. A light emitting diode (LED) device , comprising:a heat sink;an LED die thermally coupled to the heat sink;a phosphor spaced apart from the LED die; anda heat conduction path in direct contact with both the phosphor and the heat sink, the heat conduction path being configured to conduct heat from the phosphor to the heat sink.2. The LED device of wherein at least a portion of the heat conduction path is directly between the phosphor and the LED die.3. The LED device of wherein:at least a portion of the heat conduction path is directly between the phosphor and the LED die; andthe LED die includes an electrical insulator proximate to the heat conduction path.4. The LED device of wherein:the heat conduction path is a first heat conduction path; andthe LED device further includes a second heat conduction path in direct contact with the phosphor, the second heat conduction path being configured to conduct heat from the phosphor to the heat sink.5. The LED device of wherein:the heat conduction path is a first heat conduction path;the LED device further includes a second heat conduction path in direct contact with the phosphor, the second heat conduction path being configured to conduct heat from the phosphor to the heat sink; andthe first and second heat conduction paths are generally parallel to each other.6. The LED device of wherein:the heat conduction path is a first heat conduction path; andthe LED device further includes a second heat conduction path and a third heat conduction path both in direct contact ...

Display Device and Method of Manufacturing Thereof

A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material. 1. A display device comprising:a substrate;a thin film transistor formed over the substrate;a interlayer insulating film formed over the thin film transistor;an opening formed in the interlayer insulating film;a protective film formed on the opening;a second substrate provided over the interlayer insulating film; anda sealing material for adhering the first and second substrates, formed over the interlayer insulating film,wherein the opening is formed at a periphery of the substrate.274-. (canceled)75. A display device comprising:a first substrate;a thin film transistor formed over the first substrate;an insulating layer formed over the thin film transistor;an opening formed in the insulating layer;a protective film formed on the opening;a second substrate provided over the insulating layer; anda sealing ...

VAPOR DEPOSITION METHOD, VAPOR DEPOSITION DEVICE AND ORGANIC EL DISPLAY DEVICE

A coating film () is formed by causing vapor deposition particles () to pass through a mask opening () of a vapor deposition mask and adhere to a substrate, the vapor deposition particles () being discharged from a vapor deposition source opening () of a vapor deposition source () while the substrate () is moved relative to the vapor deposition mask () in a state in which the substrate () and the vapor deposition mask () are spaced apart at a fixed interval. When a direction that is orthogonal to a normal line direction of the substrate and is orthogonal to a relative movement direction of the substrate is defined as a first direction, and the normal line direction of the substrate is defined as a second direction, a plurality of control plate columns are disposed in the first direction between the vapor deposition source opening and the vapor deposition mask, each control plate column including a plurality of control plates (and ) arranged along the second direction. With this configuration, a coating film in which blur at both edges of the coating film and variations in the blur are suppressed can be formed on a large-sized substrate. 1. A vapor deposition method for forming a coating film having a predetermined pattern on a substrate , the method comprisinga vapor deposition step of forming the coating film by causing vapor deposition particles to adhere onto the substrate,wherein the vapor deposition step is a step in which with the use of a vapor deposition unit including a vapor deposition source having a vapor deposition source opening that discharges the vapor deposition particles and a vapor deposition mask disposed between the vapor deposition source opening and the substrate, the vapor deposition particles that have passed through a plurality of mask openings formed in the vapor deposition mask are caused to adhere onto the substrate while one of the substrate and the vapor deposition unit is moved relative to the other in a state in which the substrate ...

Optoelectronic Semiconductor Component

An optoelectronic semiconductor component comprising a light source, a housing and electrical connections, wherein the light source emits primary radiation having a peak wavelength in the range of 420 to 460 nm and having a flank of the primary emission which extends into the range less than 420 nm, wherein the radiation of the flank range or of part thereof is converted into visible radiation by an additive phosphor. 1. An optoelectronic semiconductor component comprising a light source , a housing and electrical connections , wherein the light source emits primary radiation having a peak wavelength in the range of 420 to 460 nm and having a flank of the primary emission which extends into the range less than 420 nm , wherein the radiation of the flank range or of part thereof is converted into visible radiation by an additive phosphor.2. The optoelectronic semiconductor component as claimed in claim 1 , wherein the additive phosphor converts radiation in the range of 380 to 420 nm into visible radiation at least partly and preferably as efficiently as possible.3. The optoelectronic semiconductor component as claimed in claim 1 , wherein the additive phosphor has a peak of its emission in the blue to yellow spectral range.4. The optoelectronic semiconductor component as claimed in claim 1 , wherein the light source is a conversion LED having a main phosphor.5. The optoelectronic semiconductor component as claimed in claim 1 , wherein the additive phosphor is applied on the chip and/or on side walls of the housing.6. The optoelectronic semiconductor component as claimed in claim 1 , wherein the additive phosphor is applied on the chip before the main phosphor or is mixed therewith.7. The optoelectronic semiconductor component as claimed in claim 1 , wherein the additive phosphor is selected from the group M10(PO4)6Cl2:Eu where M=Sr claim 1 , Ba claim 1 , Ca alone or in combination claim 1 , (BaxEu1-x)MgAl10O17 where x=0.3 to 0.5 claim 1 , or (Sr1-x-yCexLiy)2Si5N8.8. ...

Wavelength converted light emitting device

Embodiments of the invention include a semiconductor light emitting device ( 10 ) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element ( 12 ) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element ( 12 ) is attached to a support ( 51 ) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions ( 46 ) of semiconductor wavelength converting material and at least one second region ( 48 ) without semiconductor wavelength converting material disposed between the at least two first regions.

RESIN MOLDING, SURFACE MOUNTED LIGHT EMITTING APPARATUS AND METHODS FOR MANUFACTURING THE SAME

The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. 1. A light emitting apparatus comprising:a light emitting device comprising a first electrode and a second electrode;a first resin molding which integrally moldsa first lead, on which the light emitting device is mounted, anda second lead, which is electrically connected to the light emitting device, anda second resin molding that covers the light emitting device,wherein the light emitting device emits light with a wavelength that is equal to or greater than 420 nm and equal to or smaller than 490 nm,a metal plating is provided on the first lead and on the second lead,the first lead is electrically connected to the first electrode of the light emitting device by a wire or an electrically conductive die bonding member,the second lead is electrically connected to the second electrode of the light emitting device by a wire,a resin forming the first resin molding includes a titanium oxide pigment, and the resin forming the first resin molding is a thermosetting resin including at least triglycidyl isocyanurate and an acid anhydride, andthe second resin molding is formed by at least one kind selected from the group consisting of epoxy resin, modified epoxy resin, silicone resin, and modified silicone resin.2. The light emitting apparatus according to claim 1 ,wherein the second resin molding includes a fluorescent material that emits yellow light.3. The light emitting apparatus according to claim 1 ,wherein the resin forming the first resin molding has high translucency.4. The light emitting apparatus according to claim 1 ,wherein the first resin molding further includes silica.5. The light emitting apparatus according to claim 1 ,wherein the first resin molding forms a recess comprising a bottom surface and a side surface, andthe first lead is exposed from the ...

Optoelectronic Component and Method for Producing an Optoelectronic Component

An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied. 115-. (canceled)16. An optoelectronic component , comprising:a substrate;a radiation-emitting semiconductor chip disposed on the substrate;a filler disposed on the substrate laterally surrounding the semiconductor chip; anda protective layer disposed completely or in partial regions on the semiconductor chip and having an outer surface facing away from the semiconductor chip, wherein the protective layer includes a material that contains hydrophobic groups.17. The optoelectronic component according to claim 16 , wherein the hydrophobic groups each contain at least one perfluorinated carbon.18. The optoelectronic component according to claim 16 , wherein the protective layer has a thickness between 1 and 10 nm.19. The optoelectronic component according to claim 16 , wherein the hydrophobic groups are provided on an outer surface of the protective layer and the protective layer is non-wettable.20. The optoelectronic component according to claim 16 , wherein the outer surface of the protective layer is at least partially free of hydrophobic groups and the protective layer is wettable.21. The optoelectronic component according to claim 16 , wherein the semiconductor chip comprises an LED chip.22. The optoelectronic component according to claim 21 , further comprsing a conversion layer between the LED chip and the protective layer.23. The optoelectronic component according to claim 16 , wherein the protective layer is releasable.24. A method for producing an optoelectronic component claim 16 , the method comprising:A) providing a radiation-emitting semiconductor chip disposed on a substrate,B) applying a protective layer to the semiconductor chip, wherein the protective layer has an outer surface ...

Semiconductor light emitting element and method for producing the same

In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer is provided on the substrate, and further, the oxide layer being contact with the foregoing metal layer or nitride layer is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer by the physical means. 1. A semiconductor device comprising:a first substrate having flexibility;an oxide layer over the first substrate;a metal material stuck on a surface of the oxide layer, wherein the metal material is stuck on the first substrate side of the oxide layer;a layer containing an element over the oxide layer; anda first sealing film over the layer containing the element.2. The semiconductor device according to further comprising a second sealing film between the first substrate and the oxide layer.3. The semiconductor device according to further comprising a second substrate having flexibility over the first sealing film.4. The semiconductor device according to claim 3 ,wherein the first substrate is a plastic substrate, andwherein the second substrate is a plastic substrate.5. The semiconductor device according to claim 1 , wherein the element is a transistor.6. The semiconductor device according to claim 1 , wherein the element is a light emitting element.7. The semiconductor device according to claim 1 , wherein the first sealing film comprises a film containing inorganic matters.8. The semiconductor device according to claim 1 , wherein the first sealing film comprises a film containing resin.9. The semiconductor device according to claim 1 , wherein the metal material comprises an element ...

SEMICONDUCTOR LIGHT EMITTING ELEMENT ARRAY

A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations. 1. A semiconductor light emitting element array comprising:a support substrate; a first electrode formed on the support substrate,', 'a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and', 'a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and, 'a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including;'}connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of ...

Light emitter with metal-oxide coating

A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from TaO, NbO, TiO, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device. 1. A light emitting device comprising:a substrate portion;a light emitting portion in contact with the substrate portion; and{'sub': 2', '5', '2', '5', '2, 'a coating layer portion comprising a first and second coating layer wherein the first coating layer is in direct physical contact with the light emitting portion and has an index of refraction greater than 2 and an optical loss factor less than 0.2 and the second coating layer is in direct physical contact with the first coating layer and has a top surface with a three dimensional pattern chosen from a group consisting of ribs, cylinders, polygon shaped ribs, triangular shaped ridges, hemispherical shaped mounds, horizontal cylindrical shaped ribs, ellipsoids, hemispheres, rectilinear trenches, rectilinear solids, cones, angled cylinders, angled hemispheres, angled ellipsoids, angled rectilinear trenches, angled solids and angled cones and wherein element to element spacing may be uniform or not wherein said coating layer portion is chosen from a group consisting of metal oxides, silicon carbide, TaO, NbO, TiO, and their non-stoichiometric mixtures.'}2. The light emitting device of wherein said light emitting portion comprises:a first cap ...

Light Emitting Device

A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer. 1. A light emitting device comprising:a second metal layer;a second semiconductor layer on the second metal layer;an active layer on the second semiconductor layer;a first semiconductor layer on the active layer;a first metal layer on the first semiconductor layer;an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer; anda passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer,wherein the upper surface of the second metal layer contacts to a lower surface of the second semiconductor layer at a central portion of the upper surface of the second metal layer,wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, andwherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.2. The light emitting device according to claim 1 , wherein the ...

Semiconductor light emitting device

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer. 1. A semiconductor light emitting element comprising:a support substrate;a bonding layer provided on the support substrate;an LED layer provided on the bonding layer; anda buffer layer softer than the bonding layer,the buffer layer being placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.2. The element according to claim 1 , further comprising:another buffer layer placed in the other of between the support substrate and the bonding layer and between the bonding layer and the LED layer, and being softer than the bonding layer.3. The element according to claim 1 , wherein the bonding layer includes gold and indium claim 1 , and the buffer layer is made of gold.4. The element according to claim 1 , further comprising:a barrier layer provided between the bonding layer and the buffer layer and suppressing reaction between the bonding layer and the buffer layer.5. The element according to claim 4 , wherein the barrier layer includes:a layer including titanium; anda layer including platinum.6. The element according to claim 1 , further comprising:a reflection layer provided between the buffer layer and the LED layer and between the bonding layer and the LED layer.7. The element according to claim 6 , wherein the reflection layer includes silver.8. The element according to claim 6 , further comprising:a conductive alloying suppression layer provided between the reflection layer and the LED layer, not reacting to form an alloy between the reflection layer and the LED layer, and being conductive.9. The element according to claim 1 , ...

Method of manufacturing light emitting device

Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.

DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A display substrate includes a transistor, a black matrix and a color spacer. The transistor is connected to a gate line, and a data line crossing the gate line. The black matrix includes a first light-blocking portion covering the gate line and the data line, and a second light-blocking portion covering a channel of the transistor. The second light-blocking portion has a thickness which is smaller than a thickness of the first light-blocking portion. The color spacer is disposed on the second light-blocking portion. 1. A method of manufacturing a display substrate , the method comprising:forming a transistor connected to a gate line, and a data line crossing the gate line, on a base substrate;forming a black matrix comprising a first light-blocking portion overlapping the gate line and the data line, and a second light-blocking portion overlapping a channel of the transistor, the second light-blocking portion having a thickness which is smaller than a thickness of the first light-blocking portion; andforming a color light-blocking member disposed overlapping the second light-blocking portion.2. The method of claim 1 , wherein the forming a black matrix comprises:forming a light-blocking layer on the base substrate in which the transistor is formed; andforming the first light-blocking portion, and the second light-blocking portion which has the smaller thickness than that of the first light-blocking portion, by using the light-blocking layer as a slit mask or a half-tone mask.3. The method of claim 1 , wherein the thickness of the first light-blocking portion corresponds to an optical density blocking lights.4. The method of claim 3 , wherein the thickness of the second light-blocking portion is identifiable through an infrared light illuminator.5. The method of claim 1 , wherein the thickness of the first light-blocking portion is about 1.8 micrometers (μm) to about 2.2 micrometers (μm) claim 1 , and an optical density of the first light-blocking portion is about 3 ...

LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

The subject invention relates to a light emitting device, including a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type; and a passivation layer covering the first and the second semiconductor layers, wherein the passivation layer has a rough surface made from a roughing treatment. The subject invention further discloses a manufacturing method for such light emitting device. The structure of the light emitting device of the subject invention can eliminate unnecessary elements, reduce process time, facilitate control of light emitting shape and further improve light emitting efficiency. 1. A light emitting device , comprising:a first semiconductor layer having a first conductive type;a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type; anda passivation layer covering the first and the second semiconductor layers, wherein the passivation layer has a rough surface made from a roughing treatment.2. The light emitting device according to claim 1 , wherein the passivation layer comprises an optical crystal structure.3. The light emitting device according to claim 1 , wherein the passivation layer is essentially transparent and a refractive index thereof is about between 1.2 and 2.5.4. The light emitting device according to claim 3 , wherein the passivation layer is made of silicon oxide claim 3 , silicon nitride claim 3 , spin-on glass (SOG) claim 3 , epoxy resin (Epoxy) claim 3 , polymethyl methacrylate (PMMA) claim 3 , silica gel or high molecular polymer.5. The light emitting device according to claim 1 , further comprising a conductive layer claim 1 , arranged between the passivation layer and the first semiconductor layer or between the passivation layer and the second semiconductor layer.6. The light emitting device according to ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, a translucent layer, and a wavelength conversion layer. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The first semiconductor layer has a first and second major surface. The first major surface has a first and second portion. The second major surface is opposed the first major surface and has a third and fourth portion. The light emitting layer is provided on the first portion. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the second portion. The second conductive pillar is provided on the second semiconductor layer. The translucent layer is provided on the fourth portion. The wavelength conversion layer is provided on the third portion and on the translucent layer. 1. A semiconductor light emitting device , comprising:a light emitting unit including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, the first semiconductor layer having a first conductivity type and having a first major surface and a second major surface, the first major surface having a first portion and a second portion, the second major surface opposed the first major surface and having a third portion and a fourth portion provided around the third portion, the light emitting layer provided on the first portion, the second semiconductor layer having a second conductivity type and provided on the light emitting layer;a first conductive pillar provided on the second portion, extending along a first direction perpendicular to the first major surface, having a side face extending along the first direction, and electrically connected to the first semiconductor layer;a second conductive pillar provided on the second semiconductor layer, extending along the first direction, having a side face extending along the first ...

TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a plurality of gate lines and a plurality of data lines on a substrate. A plurality of pixel regions are defined by the gate lines and the data lines. Each of the pixel regions comprises a pixel electrode and a thin film transistor serving as a switch element. The gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines. 1. A thin film transistor liquid crystal display (TFT-LCD) array substrate , comprising:a plurality of gate lines and a plurality of data lines on a substrate, anda plurality of pixel regions defined by the gate lines and the data lines, each of the pixel regions comprising a pixel electrode and a thin film transistor serving as a switch element,wherein a gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines; andwherein the thin film transistor is a top gate type transistor, and the gate electrode of the thin film transistor is formed by a same transparent conductive film.2. The TFT-LCD array substrate according to claim 1 , wherein an active layer of the thin film transistor is formed on the substrate claim 1 , a source electrode of the thin film transistor is formed on the active layer and connected with corresponding data line claim 1 , a drain electrode of the thin film transistor is formed on the active layer and opposites to the source electrode claim 1 , and a first insulating layer is formed on the source electrode and the drain electrode to cover the entirety of the substrate.3. The TFT-LCD array substrate according to claim 2 , wherein the gate electrode and the pixel electrode are formed by a same transparent conductive film claim 2 , the gate ...

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

A display device having a plurality of pixel units and a manufacturing method of the same are provided. The display device includes a first substrate assembly, a second substrate assembly, a liquid crystal mixture, and a pillared polymer network. The first substrate assembly includes a first substrate and a first electrode layer disposed on the first substrate. The second substrate assembly includes a second substrate. The liquid crystal mixture is disposed between the first and second substrate assemblies. The pillared polymer network is disposed between the first and second substrate assemblies and has a first end and second end. The first end abuts against the first substrate assembly and is disposed correspondingly to the first electrode layer. The second end abuts against the second substrate assembly. Each of the pixel units includes the pillared polymer network. 1. A display device , having a plurality of pixel units , comprising:a first substrate assembly, comprising a first substrate and a first electrode layer disposed on the first substrate;a second substrate assembly, comprising a second substrate;a liquid crystal mixture, disposed between the first substrate assembly and the second substrate assembly; anda pillared polymer network, disposed between the first substrate assembly and the second substrate assembly, having a first end and a second end; wherein, the first end abuts against the first substrate assembly and is disposed correspondingly to the first electrode layer, and the second end abuts against the second substrate assembly;wherein, each of the pixel units comprises the pillared polymer network.2. The display device according to claim 1 , wherein in each of the pixel units claim 1 , a ratio of a partial area of the second substrate disposed with the pillared polymer network to an area of the second substrate is 1% to 99%.3. The display device according to claim 1 , wherein the first electrode layer comprises a plurality of first electrode ...

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A display device includes a laminated wiring formed of a low-resistance conductive film, and a low-reflection film mainly containing Al and functioning as an antireflective film which are sequentially arranged on a transparent substrate, a wiring terminal part provided at an end part of the laminated wiring and has the same laminated structure as that of the laminated wiring, and an insulating film for covering the laminated wiring and the wiring terminal part, in which the insulating film side serves as a display surface side, the wiring terminal part has a first opening part penetrating the insulating film and the low-reflection film and reaching the low-resistance conductive film, and an outer peripheral portion of the first opening part has a laminated structure of the low-resistance conductive film, the low-reflection film, and the insulating film, in at least one part. 1. A display device comprising:a laminated wiring comprising a conductive film, and an antireflective film sequentially arranged on a base layer;a wiring terminal part provided at an end part of said laminated wiring and having a same laminated structure as that of said laminated wiring; andan insulating film for covering said laminated wiring and said wiring terminal part, in which said insulating film side serves as a display surface side, whereinsaid wiring terminal part has a first opening part penetrating said insulating film and said antireflective film and reaching said conductive film, andan outer peripheral portion of said first opening part has a laminated structure of said conductive film, said antireflective film, and said insulating film, in at least one part.2. The display device according to claim 1 , further comprising:at least one of a mark and an identification mark covered with said insulating film and used in a manufacturing step, whereineach of said mark and said identification mark comprises:a laminated film of said conductive film and said antireflective film, anda second ...

Method for Producing a Conversion Lamina and Conversion Lamina

A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. A base material including a conversion substance contained therein is applied to a substrate by means of a double-layered stencil. Furthermore, a conversion lamina for a radiation-emitting semiconductor component includes a base material and a conversion substance embedded therein. The thickness of the conversion lamina is in a range of between 60 μm and 170 μm inclusive. 115-. (canceled)16. A method for producing at least one conversion lamina for a radiation-emitting semiconductor component , the method comprising:applying a base material comprising a conversion substance contained therein onto a substrate using a double-layer template.17. The method according to claim 16 , wherein the base material comprising conversion substance contained therein is applied by a printing method.18. The method according to claim 16 , wherein the template comprises at least one opening claim 16 , through which the base material comprising the conversion substance contained therein is pressed onto the substrate.19. The method according to claim 18 , wherein the template comprises a printing side and a bearing side.20. The method according to claim 19 , wherein the printing side comprises a nickel fabric structure.21. The method according to claim 19 , wherein the base material comprising the conversion substance contained therein is applied onto the printing side and subsequently pressed onto the substrate through the template with a squeegee.22. The method according to claim 19 , wherein the shape of the opening on the bearing side determines the shape of the conversion lamina.23. The method according to claim 19 , wherein the opening comprises a grid structure on the printing side.24. The method according to claim 16 , wherein the template is arranged in direct contact with the substrate when the base material is being applied.25. The method according to claim 16 , ...

METHOD FOR MANUFACTURING LIGHT EMITTING DIODE

An exemplary method for manufacturing an LED includes steps: providing a substrate with a first electrode and a second electrode; providing an isosceles trapezoidal LED chip and making the LED chip electrically connecting the first electrode and the second electrode; providing a mold with a cavity and setting the mold on the substrate to make the LED chip received in the cavity, an outer periphery of the LED chip spaced from confronting edges of the mold defining the cavity to define a channel therebetween, and a width of the channel being uniform; providing phosphor glue and filling the phosphor glue in the channel to make the phosphor glue enclose the LED chip therein; solidifying the phosphor glue to form a phosphor layer covering the LED chip and removing the mold. 1. A method for manufacturing an LED (light emitting diodes) comprising following steps:providing a substrate with a first electrode and a second electrode thereon;providing an isosceles trapezoidal LED chip on the substrate and electrically connecting the LED chip to the first electrode and the second electrode;providing a mold with a cavity and setting the mold on the substrate to make the LED chip received in a center of a bottom of the cavity, a channel being defined between confronting edges of the mold defining the cavity and a side wall and a top surface of the LED chip;providing phosphor glue and filling the phosphor glue in the cavity to make the phosphor glue fill in the channel and enclose the LED chip therein;solidifying the phosphor glue to form a phosphor layer covering the LED chip; andremoving the mold, a thickness of the phosphor layer on the top surface of the LED chip and on the side wall of the LED chip being uniform.2. The method as claimed in claim 1 , wherein a scraper is provided before the phosphor glue is solidified to scrape a part of the phosphor glue higher beyond a top surface of the mold.3. The method as claimed in claim 1 , wherein the phosphor glue is mixed by ...

Thin film light emitting diode

Light emitting devices comprise a substrate having a surface and a side surface; a semiconductor structure on the surface of the substrate, the semiconductor structure having a first surface, a second surface and a side surface, wherein the second surface is opposite the first surface, wherein the first surface, relative to the second surface, is proximate to the substrate, and wherein the semiconductor structure comprises a first-type layer, a light emitting layer and a second-type layer; a first and a second electrodes; and a wavelength converting element arranged on the side surface of the semiconductor structure, wherein the wavelength converting element has an open space, and wherein the open space is a portion not covered by the wavelength converting element.

Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses

A method for fabricating semiconductor dice includes the steps of providing a wafer assembly having a substrate and semiconductor structures on the substrate; and defining the semiconductor dice on the substrate. The method also includes the step of separating the substrate from the semiconductor structures by applying a first laser pulse to each semiconductor die on the substrate having first parameters selected to break an interface between the substrate and the semiconductor structures and then applying a second laser pulse to each semiconductor die on the substrate having second parameters selected to complete separation of the substrate from the semiconductor structures. The method can also include the steps of forming one or more intermediate structures between the semiconductor dice on the substrate configured to protect the semiconductor dice during the separating step.

SEMICONDUCTOR LIGHT EMITTING DEVICE

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section. 1. A semiconductor light emitting device comprising:a semiconductor layer including a light emitting layer, a first surface, and a second surface opposite to the first surface;a first electrode provided in a emitting region on the second surface;a second electrode provided in a non-emitting region on the second surface;a first interconnection section provided on the first electrode and electrically connected to the first electrode;a second interconnection section provided on the second electrode and on the first electrode and electrically connected to the second electrode; anda varistor film provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.2. The device according to claim 1 , further comprising:a first insulating film covering an end surface of the light emitting layer and having a higher breakdown voltage than the varistor film.3. The device according to claim 1 , wherein a first interconnection layer provided on the first electrode; and', 'a first metal pillar provided on the first interconnection ...

Light emitting diode

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1.

LED Module and Lighting Apparatus

According to one embodiment, an LED module according to the embodiment is configured by an LED chip, a pair of wiring bodies, and sealing resin. The pair of wiring bodies are connected to both electrodes of the LED chip, respectively. The sealing resin is light-transmissive, and is provided so as to cover a top face and a base of the LED chip, and cover at least a part of the pair of wiring bodies. 1. An LED module comprising:an LED chip:a pair of wiring bodies which are connected to both electrodes of the LED chip, respectively; andlight-transmissive sealing resin which covers a top surface and an undersurface of the LED chip, and covers at least a part of the pair of wiring bodies.2. The module according to claim 1 , further comprising an opaque substrate including a through hole claim 1 ,wherein the LED chip is provided at one surface side of the substrate so that the undersurface thereof faces the through hole, and is covered with the sealing resin which is provided at the one surface side of the substrate and the through hole.3. The module according to claim 1 ,wherein the sealing resin includes first and second sealing resin portions, in which the LED chip and the wiring bodies are provided on a surface of the first sealing resin portion, and the second sealing resin portion is provided so as to embed the chip and the wiring bodies on the surface of the first sealing resin portion.4. The module according to claim 1 ,wherein the pair of wiring bodies are provided so as to be exposed to a front surface and a rear surface which are outer surfaces, of the sealing resin, respectively.5. The module according to claim 1 ,wherein the LED chip is provided so as to come into contact with the wiring bodies, andwherein the sealing resin is provided so that the wiring bodies, or a radiating body which is connected to the wiring bodies to be able to conduct heat is exposed to an outer surface, or is protruded from the outer surface.6. The module according to claim 1 , ...

Light Emitting Element, Light Emitting Device Using the Light Emitting Element, and Transparent Substrate Used in Light Emitting Elements

In order to improve the light extraction efficiency of a light-emitting element, the light-emitting element includes: a light-emitting layer provided between an electrode and a transparent substrate; a particle layer provided between the light-emitting layer and the transparent substrate; and an adhesive layer provided between the light-emitting layer and the particle layer, the particle layer includes particles having a refraction index that is higher than a refraction index of the transparent substrate, the adhesive layer has a refraction index that is higher than the refraction index of the transparent substrate, and the particle layer has an average thickness that is less than an average particle size of the particles. 1. A light-emitting element , comprising:a light-emitting layer provided between a transparent substrate and an electrode;a particle layer provided between the light-emitting layer and the transparent substrate;an adhesive layer provided between the transparent substrate and the particle layer; anda transparent electrode provided between the light-emitting layer and the adhesive layer,wherein the particle layer includes particles having a refraction index that is higher than a refraction index of the transparent electrode, andwherein the particle layer includes a binder formed of at least one organic material.2. The light-emitting element according to claim 1 , wherein the particles constituting the particle layer have an average particle size of 80 to 200 nm.3. The light-emitting element according to claim 1 , wherein the particles constituting the particle layer are formed of titanium oxide claim 1 , zirconium oxide claim 1 , barium titanate claim 1 , strontium titanate claim 1 , or bismuth oxide.4. The light-emitting element according to claim 1 , wherein the particle layer has an average thickness that is less than an average particle size of the particles.5. The light-emitting element according to claim 1 , wherein the adhesive layer is added ...

Light Emitting Diode Device with Enhanced Heat Dissipation, and the Method of Preparing the Same

The present invention provides a light emitting diode device with enhanced heat dissipation, and the method of preparing the same. By forming the heat dissipating holes and trenches on the phosphor layer, and filling the heat dissipating holes and trenches on the phosphor layer with thermal conducting materials, the service life of the light emitting diode can be longer by reducing the thermal effect and improving the heat dissipation. 1. A light emitting diode device with enhanced heat dissipation , comprising:a light emitting diode chip having a light emitting surface;a phosphor layer, configured on the light emitting surface of the light emitting diode chip, wherein the phosphor layer has a plurality of heat dissipating holes, and the plurality of heat dissipating holes passes through the phosphor layer; anda heat dissipating material filling the heat dissipating holes, and the heat expansion coefficient difference between the phosphor layer and the heat dissipating material is less than 20 ppm/K.2. The light emitting diode device as claimed in claim 1 , wherein the phosphor layer further has a plurality of heat dissipating trenches configuring on an emitting surface or a receiving surface thereof claim 1 , and the plurality of heat dissipating trenches is extended from the plurality of heat dissipating holes claim 1 , and the plurality of heat dissipating trenches is filled with the heat dissipating material.3. The light emitting diode device as claimed in claim 1 , wherein the phosphor layer is a phosphor gel claim 1 , a phosphor plastic claim 1 , or a phosphor ceramic.4. The light emitting diode device as claimed in claim 1 , wherein the material of the phosphor layer is an oxide claim 1 , a nitride claim 1 , a oxynitride claim 1 , a silicate claim 1 , an aluminate claim 1 , a phosphate claim 1 , a sulfide claim 1 , a sulfur oxide claim 1 , or mixtures thereof.5. The light emitting diode device as claimed in claim 4 , wherein the material of the phosphor layer ...

Display device and method of manufacturing the same

A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.

THIN FILM TRANSISTOR SUBSTRATE, DISPLAY THEREOF AND MANUFACTURING METHOD THEREOF

A thin film transistor substrate includes a substrate and a plurality of thin film transistors. The thin film transistor includes a first electrode layer, a first insulating layer, an oxide semiconductor layer, a second electrode layer and a second insulating layer. The first electrode layer with gate portions is formed on the substrate. The first insulating layer covers the first electrode layer. The oxide semiconductor layer is formed on the first insulating layer, and the oxide semiconductor layer comprises a first boundary. The second electrode layer with drain portions and source portions is formed on the oxide semiconductor layer, wherein the drain portion and the corresponding source are corresponding gate portion, and the drain portion comprises a second boundary. The second insulating layer covers the oxide semiconductor layer and the second electrode layer. The second boundary is within the first boundary. The second electrode layer includes copper. 1. A thin film transistor substrate , comprising:a substrate;a first electrode layer on the substrate, comprising a gate portion;a first insulating layer, covering the first electrode layer;an oxide semiconductor layer on the first insulating layer, the oxide semiconductor layer comprising a first boundary; anda second electrode layer on the oxide semiconductor layer, comprising a source portion and a drain portion, wherein the source portion and the drain portion are corresponding to the gate portion, the drain portion comprising a second boundary;wherein the second boundary is within the first boundary.2. The thin film transistor substrate according to claim 1 , wherein the oxide semiconductor layer fully covers the first insulating layer.3. The thin film transistor substrate according to claim 1 , wherein the oxide semiconductor layer is one of ZnO claim 1 , IZO claim 1 , IGZO claim 1 , ITZO claim 1 , ATZO claim 1 , HIZO.4. The thin film transistor substrate according to claim 1 , wherein material of the ...

DISPLAY APPARATUS

A display apparatus includes a first substrate having a display area and a non-display area surrounding the display area, an organic film on the first substrate, a first trench in the organic film in the non-display area, the first trench surrounding the display area and including a first sidewall on an inner side of the display apparatus, which includes a sidewall of the organic film, and a second sidewall on an outer side of the display apparatus, which includes a sidewall of the organic film, and a first blocking film containing an inorganic material and covering a surface of the organic film in the non-display area and the sidewall of the organic film included in the first sidewall of the first trench. 1. A display apparatus , comprising:a first substrate having a display area and a non-display area surrounding the display area;an organic film on the first substrate;a first trench in the organic film in the non-display area, the first trench surrounding the display area and including a first sidewall on an inner side of the display apparatus, which includes a sidewall of the organic film, and a second sidewall on an outer side of the display apparatus, which includes a sidewall of the organic film; anda first blocking film containing an inorganic material and covering a surface of the organic film in the non-display area and the sidewall of the organic film included in the first sidewall of the first trench.2. The display apparatus of claim 1 , wherein the first blocking film extends onto a bottom surface of the first trench.3. The display apparatus of claim 2 , wherein the first blocking film covers the sidewall of the organic film in the second sidewall of the first trench.4. The display apparatus of claim 1 , further comprising an insulating film between the first substrate and the organic film claim 1 , the first trench exposing the insulating film claim 1 , and each of the first sidewall and the second sidewall of the first trench further comprises a ...

METHOD OF MANUFACTURING A LIGHT EMITTING DIODE

A method () of making a semiconductor device, for example a light emitting diode. The method () includes providing () a semi-conductor wafer, and providing () a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer () over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials () provided over the selectively etched semiconductor wafer. 2. A method according to wherein the processing steps include providing a mask over the protective layer.3. A method according to wherein the step of providing the mask comprises providing a mask layer over the protective layer and then etching through areas of the mask layer to form the mask.4. A method according to wherein the step of providing the mask further comprises providing a metal layer over said mask layer and annealing the metal layer to form metal islands which define the etch area between them.5. A method according to wherein the mask defines an etch area and the processing steps include etching into the semiconductor wafer under the etch area.6. A method according to wherein some of the processing steps form nano-pillars in the wafer with gaps between them claim 1 , and the steps include filling the gaps with material and etching back the material.7. A method according to wherein the processing steps include removing the mask claim 2 ,8. A method according to further comprising treating the etched semiconductor wafer with acid.9. A method according to wherein the acid is nitric acid at a temperature of at least 100 degrees Celsius.10. A method according to in which the duration of the treating step is at least 1 minute.11. A method according to in which the acid comprises at ...

LIGHT BLOCKING MEMBER AND DISPLAY PANEL INCLUDING THE SAME

A light blocking member including a metal particle and a ceramic material and a display device including the same. 1. A light blocking member , comprising:a metal particle and a ceramic material.2. The light blocking member of claim 1 , wherein the metal particle and ceramic material are included in a form of a mixture or an alloy.3. The light blocking member of claim 1 , wherein the metal particle comprises silver (Ag) claim 1 , molybdenum (Mo) claim 1 , nickel (Ni) claim 1 , titanium (Ti) claim 1 , tantalum (Ta) claim 1 , or a combination thereof.4. The light blocking member of claim 1 , wherein the metal particle has an average particle diameter of about 10 Å to about 1 claim 1 ,000 Å.5. The light blocking member of claim 1 , wherein the ceramic material comprise niobium oxide claim 1 , titanium oxide claim 1 , aluminum oxide claim 1 , or a combination thereof.6. The light blocking member of claim 1 , wherein the light blocking member claim 1 , comprises:a first layer including the metal particle in a first amount and ceramic material, anda second layer including the metal particle in a second amount that is larger than the first amount and ceramic material.7. The light blocking member of claim 6 , wherein the first amount includes an amount of about 1 at % to about 15 at % based on the total amount of the metal particle and ceramic material claim 6 , andthe second amount includes an amount of about 10 at % to about 50 at % based on the total amount of the metal particle and ceramic material.8. The light blocking member of claim 6 , wherein the first layer has higher transmittance than the second layer.9. The light blocking member of claim 6 , wherein the first layer is disposed more closely to a light incident side than the second layer.10. The light blocking member of claim 6 , wherein the first layer has a thickness of about 100 Å to about 1 claim 6 ,000 Å claim 6 , and the second layer has a thickness of about 500 Å to about 10 claim 6 ,000 Å.11. A display ...

Light-emitting device with narrow dominant wavelength distribution and method of making the same

This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

LIGHT EMITTING DIODE COMPONENT

In a lighting package, a printed circuit board supports at least one light emitting die. A light transmissive cover is disposed over the at least one light emitting die. A phosphor is disposed on or inside of the light transmissive dome-shaped cover. The phosphor outputs converted light responsive to irradiation by the at least one light emitting die. An encapsulant substantially fills an interior volume defined by the light-transmissive cover and the printed circuit board. 163-. (canceled)64. A lighting device comprising: at least one solid state light emitter , said solid state light emitter having an illumination surface; and at least one luminescent element , said luminescent element comprising at least one luminescent material , said luminescent element being spaced from said solid state light emitter by a distance which is at least two times the length of the solid state light emitter.65. The lighting device as recited in claim 64 , wherein said solid state light emitter is a light emitting diode chip or laser.66. The lighting device as recited in claim 64 , wherein said luminescent element having a luminescent element surface claim 64 , said luminescent element surface being at least ten times as large as said illumination surface.67. A lighting device as recited in claim 64 , wherein said illumination surface is substantially planar.68. A lighting device as recited in claim 64 , wherein said luminescent element surface is substantially planar.69. A lighting device as recited in claim 64 , wherein said luminescent element comprises an encapsulant in which a luminescent material is contained.70. A lighting device as recited in claim 69 , wherein said encapsulant comprises a plastic material.71. A lighting device as recited in claim 70 , wherein said plastic has been cured.72. A lighting device as recited in claim 64 , wherein said at least one luminescent material comprises at least one phosphor.73. A lighting device as recited in claim 64 , wherein said ...

Light-emitting diode devices

An LED device includes an LED chip having a sapphire substrate, a first-type semiconductor layer on the substrate, a second-type semiconductor layer disposed on the first-type semiconductor layer, a first via hole passing through the sapphire substrate and the first-type semiconductor layer, a second via hole passing through the sapphire substrate, and an insulation layer coated on an inner wall of the first via hole; a transparent conductive layer made of electrically conductive material and formed on the second-type semiconductor layer; a cover layer formed on the transparent conductive layer; electrical conductors, each disposed within one of the via holes, wherein the electrical conductor in the first via hole is electrically connected to the second-type semiconductor layer and the electrical conductor in the second via hole is electrically connected to the first-type semiconductor layer; and two linkers for connection to external circuitry, formed on a surface of the sapphire.

Method of fabricating vertical structure leds

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Light emitting device

A light emitting device includes a conductive support member, and first and second light emitting structures. A channel layer is provided around lower portions of the first and second light emitting structures. A first electrode is coupled to a first conductive first semiconductor layer of the first light emitting structure, and a second electrode is coupled to a second semiconductor layer of the first light emitting structure. A third electrode is coupled to a third semiconductor layer of the second light emitting structure, and a fourth electrode is coupled to a fourth semiconductor layer of the second light emitting structure. A first connection part is coupled to the first electrode and the conductive support member, and a second connection part is coupled to the second and third electrodes. A third connection part is coupled to the fourth electrode and has one end provided on the channel layer.

Wafer level led package and method of fabricating the same

Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

LIGHT EMITTING DEVICE

A light emitting device includes a flexible substrate including a flexible base member and a plurality of wiring portions disposed on one surface of the base member, at least one light emitting element arranged on a first surface of the flexible substrate and electrically connected to the respective wiring portions, a sealing resin sealing the light emitting element, and an adhesion layer arranged on a second surface of the flexible substrate. The adhesion layer has a portion corresponding at least to a region on the first surface where the at least one light emitting element is arranged. The portion has a thickness smaller than a thickness of regions other than the portion. 1. A light emitting device comprising:a flexible substrate including a flexible base member and a plurality of wiring portions disposed on one surface of the base member;at least one light emitting element arranged on a first surface of the flexible substrate and electrically connected to the wiring portions;a sealing resin sealing the light emitting element; andan adhesion layer arranged on a second surface of the flexible substrate different from the first surface of the flexible substrate, the adhesion layer having a small thickness portion corresponding at least to a region on the first surface where the at least one light emitting element is arranged, the small thickness portion of the adhesion layer having a thickness smaller than a thickness of regions of the adhesion layer other than the portion.2. The light emitting device according to claim 1 , wherein the thickness of the small thickness portion of the adhesion layer is zero.3. The light emitting device according to claim 1 , further comprising a separation layer disposed in the small thickness portion of the adhesion layer.4. The light emitting device according to claim 3 , wherein the separating layer has a thickness not greater than a depth of the small thickness portion.5. The light emitting device according to claim 1 , wherein ...

MULTICHIP LIGHT EMITTING DIODE (LED) AND METHOD OF MANUFACTURE

The present invention provides a multichip LED and method of manufacture in which white light is produced. A plurality of electrically interconnected LED chips is selected for conversion of light to white light. The LED chips comprise: a blue LED chip, a red LED chip, a green LED chip, and a target LED chip whose light output is converted to white light. A wavelength of a light output by one or more of the plurality of chips will be measured. Based on the wavelength measurement, a conformal coating is applied to the one or more of the LED chips. The conformal coating has a phosphor ratio that is based on the wavelength. The phosphor ratio is comprised of at least one of the following colors: yellow, green, or red. Using the conformal coating, the light output of the target LED is then converted to white light. 1. A method for manufacturing a multichip light emitting diode (LED chip) , comprising:providing a plurality of LED chips in electrical contact with each other;applying a conformal coating to at least one of the plurality of LED chips, the conformal coating having a phosphor ratio that is based on a previous measurement; andconverting a light output of a target LED chip of the plurality of LED chips to white light using the conformal coating.2. The method of claim 1 , the previous measurement comprising a measurement of a wavelength of the light output by the plurality of LED chips.3. The method of claim 1 , the plurality of LED chips comprising:a blue LED chip;a red LED chip;a green LED chip; andthe target LED chip whose light output is converted to white light.4. The method of claim 1 , further comprising isolating an area of the plurality of LED chips to which the conformal coating is applied.5. The method of claim 4 , the area being isolated using paraffin wax.6. The method of claim 4 , the area being isolated using a silk screen.7. The method of claim 4 , the area being isolated using a photo resist.8. The method of claim 1 , the conformal coating having ...

ENCAPSULATING SHEET-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND PRODUCING METHOD THEREOF

A method for producing an encapsulating sheet-covered semiconductor element includes a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other and an encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and to form a space over the semiconductor elements adjacent to each other. 1. A method for producing an encapsulating sheet-covered semiconductor element comprising:a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other andan encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and to form a space over the semiconductor elements adjacent to each other.2. The method for producing an encapsulating sheet-covered semiconductor element according to claim 1 , whereinthe encapsulating sheet exposes a portion of opposed surfaces of the semiconductor elements that are opposed to each other.3. The method for producing an encapsulating sheet-covered semiconductor element according to claim 1 , whereinthe semiconductor element is an optical semiconductor element.4. The method for producing an encapsulating sheet-covered semiconductor element according to claim 3 , whereinthe optical semiconductor element is an LED.5. The method for producing an encapsulating sheet-covered semiconductor element according to claim 1 , whereinthe encapsulating sheet is a phosphor sheet containing a phosphor.6. An encapsulating sheet-covered semiconductor element obtained by a method for producing an encapsulating sheet-covered semiconductor element comprising:a semiconductor element disposing step of disposing a plurality of semiconductor elements at spaced intervals to each other andan encapsulating sheet disposing step of disposing an encapsulating sheet so as to cover a plurality of the semiconductor elements and ...

SEMICONDUCTOR LIGHT EMITTING DEVICE

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

There is provided a light emitting device including a light emitting element, a covering member for covering a side surface of the light emitting element, and a light-transmissive member disposed on upper surfaces in a light emitting direction of the light emitting element and the covering member and having an end face on substantially the same plane as an end face of the covering member, wherein the covering member has a recess portion or a convex portion on the upper surface, a light emitting surface of the light emitting element and an upper surface other than the recess portion or the convex portion of the covering member are arranged on substantially the same plane, and the light-transmissive member is provided in contact with the recess portion or the convex portion. 1. A light emitting device comprising:a light emitting element;a covering member for covering a side surface of the light emitting element; anda light-transmissive member disposed on upper surfaces in a light emitting direction of the light emitting element and the covering member, the light-transmissive member having an end face on substantially the same plane as an end face of the covering member, whereinthe covering member has a recess portion or a convex portion on an upper surface thereof,a light emitting surface of the light emitting element and an upper surface other than the recess portion or the convex portion of the covering member are arranged on substantially the same plane, andthe light-transmissive member is provided in contact with the recess portion or the convex portion.2. The light emitting device according to claim 1 , wherein the recess portion or the convex portion extends along the light emitting element.3. The light emitting device according to claim 1 , wherein the recess portion or the convex portion is separated from the light emitting element.4. The light emitting device according to claim 1 , wherein the covering member is a resin containing a light reflective material. ...

PASSIVATION COVERED LIGHT EMITTING UNIT STACK

A light emitting diode (LED) pixel for a display including a light emitting structure including at least one active layer and configured to generate light, a first passivation layer covering the light emitting structure, a protection structure disposed on the first passivation layer, a plurality of lower via contacts passing through the first passivation layer and electrically connected to the light emitting structure; and a plurality of upper via contacts passing through the protection structure and electrically connected to the lower via contacts, respectively, in which the lower via contacts and the upper via contacts are disposed outside of the at least one active layer. 1. A light emitting diode (LED) pixel for a display , comprising:a light emitting structure comprising at least one active layer and configured to generate light;a first passivation layer covering the light emitting structure;a protection structure disposed on the first passivation layer,a plurality of lower via contacts passing through the first passivation layer and electrically connected to the light emitting structure; anda plurality of upper via contacts passing through the protection structure and electrically connected to the lower via contacts, respectively,wherein the lower via contacts and the upper via contacts are disposed outside of the at least one active layer.2. The LED pixel for a display of claim 1 , wherein the light emitting structure comprises:a first LED sub-unit;a second LED sub-unit disposed on the first LED sub-unit; anda third LED sub-unit disposed on the second LED sub-unit;wherein the first, second, and third LED sub-units comprise first, second, and third LED stacks, respectively, andwherein each of the first, second, and third LED stacks comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.3. The LED pixel for a display of claim 2 , wherein the first LED stack claim 2 , the second LED stack ...

MICRO-LEDS WITH ULTRA-LOW LEAKAGE CURRENT

Micro-scale light emitting diodes (micro-LEDs) with ultra-low leakage current results from a sidewall passivation method for the micro-LEDs using a chemical treatment followed by conformal dielectric deposition, which reduces or eliminates sidewall damage and surface recombination, and the passivated micro-LEDs can achieve higher efficiency than micro-LEDs without sidewall treatments. Moreover, the sidewall profile of micro-LEDs can be altered by varying the conditions of chemical treatment. 1. A method , comprising:growing one or more III-nitride semiconductor layers on a substrate;dry etching the III-nitride semiconductor layers during fabrication of a device, wherein the dry etching introduces defects and surface states on one or more sidewalls of the device, the defects and surface states serve as charge carrier traps, and the defects and surface states increase leakage current of the device and a probability of non-radiative recombination in the device;performing one or more chemical treatments to remove damage from the sidewalls of the device; anddepositing one or more dielectric materials on the sidewalls of the device to passivate the sidewalls of the device, and to bury the defects and surface states, in order to lower the leakage current of the device generated by the dry etching.2. The method of claim 1 , wherein the chemical treatments are performed before the dielectric materials are deposited.3. The method of claim 2 , wherein other fabrication processes are performed on the device between the chemical treatment being performed and the dielectric materials being deposited.4. The method of claim 1 , wherein the dielectric materials are deposited before the chemical treatments are performed.5. The method of claim 4 , wherein other fabrication processes are performed on the device between the dielectric materials being deposited and the chemical treatment being performed.6. The method of claim 1 , wherein the dry etching comprises a plasma-based dry ...

OPTICAL DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT

A display device includes a frame and an image display device. The image display device includes an image forming device, a light guide device, and a lens system. The image forming device includes light emitting elements arranged in a two-dimensional matrix. Each of the light emitting elements has a laminated structure including at least one layer of light emitting laminates , and each including a first electrode, a second electrode, and a light emitting layer provided between the first electrode and the second electrode. The laminated structure has a through hole through which light from the light emitting layer is emitted toward the lens system. An antireflection layer is formed in a portion of the laminated structure facing the lens system. 1. An optical device , comprising:an image forming device that includes a plurality of light emitting elements, wherein each of the plurality of light emitting elements includes a through hole, a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode;a lens system configured to project an image from the image forming device on an outside of the optical device; andwherein the light emitting layer is configured to emit light toward the lens system via the through hole.2. The optical device according to claim 1 , wherein the lens system is further configured to reflect the light.3. The optical device according to claim 1 , wherein each of the plurality of light emitting elements further includes:an antireflection layer in a portion of the laminated structure, anda condenser lens on the antireflection layer, andthe antireflection layer faces the lens system such that the light reflected by the lens system is not reflected by the image forming device.4. The optical device according to claim 1 , wherein the antireflection layer is up to an edge portion of the through hole in the laminated structure.5. The optical device according to claim 1 , wherein the plurality of the ...

OPTOELECTRONIC COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier. 1. An optoelectronic component comprising:at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, anda sealing material directly applied by atomic layer deposition,wherein the semiconductor component is applied on a carrier,the carrier comprises electrical connection layers,the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, andthe sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.2. The component according to claim 1 , wherein the semiconductor component is applied with a mounting area on the carrier.3. The component according to claim 1 , wherein the semiconductor component and the sealing material are at least partly enclosed with a housing material.4. The component according to claim 1 , wherein the optoelectronic component has a ...

LIGHT EMITTING MODULE

A light emitting module according to an embodiment includes a first insulation film and a second insulation film with a light transmissivity, a plurality of first double-sided light emitting elements disposed between the first insulation film and the second insulation film, and each including a pair of electrodes on one surface, a plurality of second double-sided light emitting elements disposed between the first insulation film and the second insulation film adjacent to the respective first double-sided light emitting elements, each including a pair of electrodes on one surface, and emitting different light from the first double-sided light emitting element. 1. A light emitting module comprising:a first insulation film with a light transmissivity;a second insulation film disposed so as to face the first insulation film;a first double-sided light emitting element disposed between the first insulation film and the second insulation film, and comprising a pair of electrodes on one surface;a second double-sided light emitting element disposed between the first insulation film and the second insulation film adjacent to the first double-sided light emitting element, comprising a pair of electrodes on one surface, and emitting different light from the first double-sided light emitting element;a first conductor pattern formed on a surface of the first insulation film, and connected to the first double-sided light emitting element;a second conductor pattern formed on a surface of the first insulation film, and connected to the second double-sided light emitting element; anda connection between the first conductor pattern and the second conductor pattern.2. The light emitting module according to claim 1 , comprising:a third double-sided light emitting element disposed between the first insulation film and the second insulation film adjacent to the first double-sided light emitting element and also to the second double-sided light emitting element, comprising a pair of ...

METHOD FOR MANUFACTURING INORGANIC LIGHT EMITTER

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter. 1. A method for manufacturing an inorganic light emitter , the method comprising:arranging an inorganic light emitting element on one surface of a substrate;separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; andstacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.2. The method for manufacturing the inorganic light emitter according to claim 1 , wherein the oxygen concentration is set to be in a range of 22% to 30% at the separating.3. The method for manufacturing the inorganic light emitter according to claim 1 , whereinthe arranging includes forming the inorganic light emitting element above a formation substrate, andthe separating includes separating the inorganic light emitting element from the formation substrate by emitting the laser light to the inorganic light emitting element above the formation substrate.4. The method for manufacturing the inorganic light emitter according to claim 3 , wherein the separating includes transferring the ...

LIGHT EMITTING ELEMENT STRUCTURE AND METHOD OF FABRICATING A LIGHT EMITTING ELEMENT

Provided are a light-emitting diode structure and a light-emitting diode manufacturing method. The light-emitting diode manufacturing method comprises the operations of: 1. A method of fabricating a light-emitting element , the method comprising:preparing a lower substrate, which includes a substrate and a separation layer on the substrate;preparing at least one semiconductor rod on the separation layer;forming a rod structure, which includes a rod protecting layer on the separation layer to surround the at least one semiconductor rod;forming an auxiliary layer formed on at least part of the rod protecting layer;separating the rod structure from the lower substrate by removing the separation layer; andseparating the at least one semiconductor rod from the rod structure.2. The method of claim 1 , wherein claim 1 , in the separating the rod structure claim 1 , the separation layer is etched away by an etchant for separation claim 1 , andwherein the rod protecting layer does not react with the etchant for separation.3. The method of claim 2 , wherein the etchant for separation includes a material containing fluorine (F) claim 2 , andwherein the rod protecting layer includes an organic material that is insoluble in the etchant for separation.4. The method of claim 3 , wherein the forming the rod structure comprises forming the rod protecting layer by coating the at least one semiconductor rod with the organic material.5. The method of claim 4 , wherein the organic material of the rod protecting layer includes at least one of polymethyl methacrylate (PMMA) claim 4 , photoresist (PR) claim 4 , and poly-(3 claim 4 ,4-ethylenedioxy thiophene)polystyrene sulfonate (PEDOT:PSS).6. The method of claim 4 , wherein the separating the at least one semiconductor rod comprises removing the auxiliary layer from the rod protecting layer claim 4 , dissolving the organic material of the rod protecting layer in a solvent claim 4 , and removing the organic material dissolved in the ...