LOW CADMIUM CONTENT NANOSTRUCTURE COMPOSITIONS AND USES THEREOF

Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

Semi rigid base course core appearance terminal surface is repaired and is used die sinking equipment

The utility model relates to a road building material technical field, concretely relates to a semi rigid base course core appearance terminal surface is repaired and is used die sinking equipment, including examination mould and bottom plate, the examination mould includes first semicircle mould and second semicircle mould, first semicircle mould and second semicircle mould be vertical locating respectively on the bottom plate, and detachably is to closing the connection, first semicircle mould through a locating component with the bottom plate location is connected, second semicircle mould through the 2nd locating component with the bottom plate location is connected. The utility model provides a semi rigid base course core appearance terminal surface is repaired and is used die sinking equipment for semi rigid base course mechanical properties test provides qualified core appearance, solves cement mortar, clean thick liquid is bad with the combination at core appearance interface, and ...

Water-soluble mould and preparation method thereof and method for forming composite material

The invention provides a water-soluble mould and a preparation method thereof and a method for forming a composite material. In the technical scheme, the water-soluble mould is prepared by mixing an adhesive and a matrix material, wherein the matrix material adopts quartz sand or silica microsphere, and the adhesive adopts a polyethylene glycol water solution. The method for forming the compositematerial comprises the following steps of: (1) placing the prepreg of a resin matrix composite on the water-soluble mould, carrying out pre-compaction to obtain a prepreg stacked layer of the composite; (2) solidifying the prepreg stacked layer of the composite prepared by the step (1) to obtain a composite material product; and (3) carrying out dissolution and separation on the water-soluble mould out of the composite material product obtained by the step (2) by taking water or the water solution containing carboxyl as a solvent, and finally obtaining a composite material member. The invention ...

Welding and positioning apparatus of steel pipe flange

The invention discloses a welding and positioning apparatus of a steel pipe flange, relating to an auxiliary welding facility. The middle-upper part of an upright of the positioning apparatus is provided with a lifting telescopic rod which is movably connected with the upright via a grooved pulley; two axially adjustable wheels are arranged at the lower side of the front end of the lifting telescopic rod; a telescopic rod frame is arranged at the upper side of the front part of the lifting telescopic rod, and an adjustable radial wheel is arranged at the lower side of the middle part of a cross rod of the telescopic rod frame; and a welding gun frame is fixed on the telescopic rod frame to form the welding and positioning apparatus of the steel pipe flange. In the invention, a simple mechanical device is adopted to follow up the flange, so that the defects of large out-of-roundness of domestic steel pipes and axial and radial runout generated in the process of rotation are overcome, the ...

Method for extracting and purifying animal mitochondria DNA

The invention discloses a method for extracting animal mitochondria DNA, which has the innovativeness that a DNasel digestion step is added on the basis of alkaline denaturation to eliminate residual nuclear DNA; and an RNase digestion step is added to remove residual RNA. The mitochondria DNA extracted by the method has high purity. The electrophoretic detection shows that an electrophoretic band is a clear, regular and uniform band; and the background is clear, and the conditions such as the trailing of macromolecular DNA and front-end RNA and the like do not occur near a sample applicationpore.

BIMETALLIC CATALYST FOR ETHYL POLYMERIZATION WITH BIMODALER MOLECULAR WEIGHT DISTRIBUTION, ITS PRODUCTION AND USE

DERIVATIVES OF SCHIFF' BASES OF RUTHENIUM AND OSMIUM CATALYSTS TO OLEFINMETATHESE

STABLE INP QUANTUM DOTS WITH THICK SHELL COATING AND METHOD OF PRODUCING THE SAME

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

Three-freedom double-layer oil film type spherical hinge

The invention relates to a three-dimensional double-layer oil film type spherical hinge, wherein a ball and socket is provided with a oil feeding pressure inlet and an oil-return pressure inlet; a major semi-sphere is arranged in the concave spherical surface of the ball and socket, and a minor semi-sphere is arranged in the major semi-sphere; the end surface of the major semi-sphere is connectedwith a cover board; a mandrel respectively passes through a central circular hole of the ball and socket, the major semi-sphere, and the minor semi-sphere; the ball and socket, the major semi-sphere,and the minor semi-sphere are mounted and connected together; a ball-and-socket oil groove is arranged on the concave spherical surface, and is communicated with the oil feeding pressure inlet through an oil passage, and an oil inlet of the ball-and-socket oil groove is provided with a ball-and-socket throttleer; and the convex spherical surface of the minor semi-sphere is provided with a minor semispherical ...

Handheld device and control method thereof

Split-gate, twin-bit non-volatile memory cell

Method of making split gate non-volatile flash memory cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region.

Tool clamp and servo motor stator automatic welding equipment

The invention provides a tool clamp which comprises an electric rotating table, an outer clamping power mechanism, an outer clamping transmission mechanism and an inner supporting mechanism. The invention further provides servo motor stator automatic welding equipment, the servo motor stator automatic welding equipment comprises a laser main machine, a smoke purifier, a laser welding cabinet, a touch control operation screen and a tool clamp, and a laser welding mechanism is arranged in the laser welding cabinet of the servo motor stator automatic welding equipment. A laser welding head in the laser welding mechanism can slide along the X-axis and the Y-axis through an X-axis servo sliding rail and a Y-axis servo sliding rail, so that the purposes of laser focusing and movement in the laser welding process can be achieved, the laser welding head can be rotated to the next to-be-welded position of a semi-finished stator after welding on one side is completed in cooperation with a tool clamp ...

CATALYST COMPOSITIONS AND PROCESSES FOR OLEFIN POLYMERS AND COPOLYMERS

The present invention is directed to certain novel late transition metal salicylaldimine chelates and, further, to novel bidentate ligand compounds of substituted salicylaldimine, and their utility as polymerization catalysts alone or in combination with adjunct agent and/or Lewis base in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized olefin monomers.

Bookshelf in bag

The invention discloses a bookshelf in a bag; in particular a bookshelf in a two-shoulder-belt soft bag for students in middle schools and primary schools. The bookshelf in the bag comprises a front lateral board, a back lateral board and a plurality of partition boards arranged between the front lateral board and the back lateral board; a plurality of retractable support rods are fixedly arranged on the groove of the front lateral board, are located on the same horizontal plane, and extend towards a cantilever which is arranged in a direction of the back lateral board equidistantly and in parallel; a plurality of fixing hole bases with through holes are fixedly arranged on the groove of the back lateral board; the through hole is matched with the joint of the retractable support rod, and each through hole at the lower end of the partition boards is sleeved on the corresponding retractable support rod. The invention is convenient to store and take books or files, can prevent the books and ...

Superconductive high dynamic direct drive electric actuator

The invention discloses a superconductive high dynamic direct drive electric actuator belonging to the technical field of motors and solves the problems that the traditional actuator has complex structure, low control frequency response and poorer dynamic property and is not suitable for a high-power steering engine system. The superconductive high dynamic direct drive electric actuator comprises a primary stage, a secondary stage and an air gap, wherein an annular coil of the primary stage is fixed in a cylindrical shield shell, and a plurality of annular coils are connected in series or in parallel to form a single-phase or multi-phase winding; a superconductive magnet ring of the secondary stage is fixed in an annular space formed by a cylindrical sealed cooler and a support shaft, and two shielding end plates are fixed at two ends of the cylindrical sealed cooler which is internally filled with low-temperature cooling medium. The superconductive magnet ring of the secondary electrode ...

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Aquaculture monitored control system based on internet of things sensation technology

... (B, ) the utility model discloses an aquaculture monitored control system based on internet of things sensation technology is including data acquisition module, host computer module, embedded (b) (b) web (b) (b) host system, equipment control module and execution equipment module, data acquisition module includes wireless sensor network and sensor, embedded (b) (b) web (b) (b) host system connects wireless sensor network and (b) (b) internet (b) (b) through the mode of embedded (b) (b) web (b) (b) server for receive and to handle the data that data acquisition module sent each sensor, and with the data transmission behind the real -time processing to host computer module, embedded (b) (b) web (b) (b) host system also communicates by letter with terminal equipment, sends control signal and gives equipment control module, the host computer module is passed through the serial ports and is connected with embedded (b) (b) web (b) (b) host system, handles and saves in network database data, equipment ...

Method for simply and rapidly producing green silver nano-particle

Intrusion monitoring method, system and equipment for oil and gas pipeline and medium

The invention discloses an intrusion monitoring method, system and device for an oil and gas pipeline and a medium, and relates to the technical field of oil and gas pipeline monitoring, and the method comprises the steps: S1, obtaining at least one piece of current monitoring data for the oil and gas pipeline; and S2, for each piece of current monitoring data, inputting the current monitoring data into a pre-constructed target digital twinborn model for the oil and gas pipeline, and determining whether an intrusion event occurs through the target digital twinborn model. The oil and gas pipeline comprises a plurality of pipeline sections, the obtained current monitoring data are analyzed and judged through the target digital twin model for the oil and gas pipeline, whether the pipeline section corresponding to the current monitoring data has an intrusion event or not is determined, and an operation enterprise of the oil and gas pipeline can be subsequently alarmed according to the intrusion ...

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Methods for synthesis of inorganic nanostructures using molten salt chemistry

The invention relates to highly luminescent nanostructures with strong blue light absorbance, particularly core/shell nanostructures comprising an In(1-x)GaxP core and ZnSe and/or ZnS shell layers, wherein 0 Подробнее

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Low cadmium content nanostructure compositions and uses thereof

Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

Manufacturing method for netty grid-filled core board type artificial board

The invention discloses a manufacturing method for a netty grid-filled core board type artificial board, relates to the manufacturing method of the artificial board, and belongs to the technical field of processing of wood products. The invention is to solve the problems that the existing artificial board is heavy in weight and tedious in processing process. The manufacturing method includes the steps of: 1, slotting along the length direction to obtain an arch-shaped or comb-shaped abnormal boards; 2, filling, then laminating in the height direction with notches in the same direction and gluing to obtain an abnormal board assembly; 3, splicing the abnormal board assemblies along the width direction to form an abnormal laminate; 4, sawing along the height direction of the abnormal laminate at a certain angle to obtain grid core board strips; 5, laminating the grid core board strips with notches in different direction and gluing to obtain the netty grid-filled core board; 6, covering wood ...

Sealed moisture proof electrical box

Improved maltose-free areca nut brine and preparation process thereof

The invention provides maltose-free areca nut brine. The maltose-free areca nut brine mainly comprises the following components in parts by weight: 100-150 parts of lime, 500-600 parts of water, 70-80g of areca nut powder or areca nut extract powder, 50-60 parts of xanthan gum, 50-60 parts of modified starch, 10-20 parts of gelatin and 10-20 parts of calcium carbonate. And the rest is 1-3 parts of a sweetening agent and 1-3 parts of flavors and fragrances. The preparation method comprises the following steps: preparing the pre-marinating liquid, and adding the sweetening agent and the essence into the pre-marinating liquid. The bittern can solve the problems of whitening, bittern softening, bittern melting and thinning, wound and the like of the bittern in the shelf life, the preparation process is simple, and the betel nut powder or the betel nut extract powder is added in the preparation of the bittern, so that the bittern is richer and more stable.

Low-carbon alkane dehydrogenation olefin preparation catalyst and preparation method and application thereof

The invention relates to a low-carbon alkane dehydrogenation olefin preparation catalyst and a preparation method and application thereof, the catalyst comprises an alumina carrier, 0.1-5.0 wt% of a group VIII metal, 0.1-3.0 wt% of a second metal component, 0.1-3.0 wt% of a group IA metal and 0.3-5.0 wt% of halogen based on the dry base weight of the alumina carrier, 0.1-5.0 wt% of boron, wherein the second metal component is selected from the group consisting of tin, germanium, lead, indium, gallium or thallium. The catalyst provided by the invention has high raw material conversion rate and target product selectivity, and can effectively inhibit the generation of carbon deposition.

Bench testing machine with double-rotation compound motion

The invention discloses a double-rotation composite motion bench testing machine which comprises a base, a main rotation motion part, an auxiliary rotation motion part and a brake pipe carrying part. The main rotary motion part comprises a gear motor, a rotary disc, a connecting plate, a swing arm plate and a driven rotary disc, the gear motor is connected with the rotary disc, and the rotary disc and the driven rotary disc are connected with the swing arm plate through the connecting plate; the auxiliary rotary motion part comprises a servo motor, a motor fixing plate and a universal joint, and the universal joint is fixedly connected with a rotating shaft of the servo motor; the brake pipe carrying part comprises a connecting rod, a brake pipe support fixing block, a brake pipe, a brake pipe joint fixing plate, a hollow steel pipe, a fisheye bearing, a bearing fixing block and an aluminum profile, the connecting rod is connected with the universal joint and the hollow steel pipe, and ...

Oil and gas pipeline station regionalization management comprehensive evaluation method and system

The invention discloses an oil and gas pipeline station regionalization management comprehensive evaluation method and system, and relates to the technical field of data processing, and the method comprises the steps: collecting risk indexes of a target station; traversing the risk index set to calculate the index information entropy; screening the index information entropy set according to a preset information entropy threshold to obtain an evaluation index set; parameters of the target station yard are collected according to the evaluation index set, and an evaluation data set is obtained; performing normalization processing on the evaluation data set, and inputting the evaluation data set into a comprehensive evaluation model; determining a management optimization direction according to a comprehensive evaluation result, and performing iterative optimization on the optimization adjustment scheme in combination with a tabu search algorithm to obtain an optimal adjustment scheme; and adjusting ...

CATALYST COMPOSITIONS AND PROCESSES FOR OLEFIN OLIGOMERIZATION AND POLYMERIZATION

The present invention is directed to certain novel late transition metal pyrrolaldimine chelates and, further, to novel bidentate ligand compounds of substituted pyrrolaldimine, and their utility as polymerization catalysts in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized alpha-olefin monomers.

Coverage regulation and control method and device

The invention discloses a coverage regulation and control method and device. The coverage regulation and control method comprises the steps of obtaining characteristic parameters of public network base stations on the periphery of regulation and control base stations; arranging N regulation and control base stations according to the regulation and control coverage demand and the signal intensity of the public network base stations and finishing coverage of regulation and control regions, wherein N is an integer; confirming the bandwidth of intersected zones of the regulation and control regions according to the signal intensity of the public network base stations and the characteristic parameters of the regulation and control base stations; adjusting the number and the characteristic parameters of the regulation and control base stations to enable the bandwidth of the intersected zones of the regulation and control regions to be minimum, wherein signal coverage boundaries of the regulation ...

Rice black-streaked dwarf virus (RBSDV) resistant locus qRBSDV9 of rice variety 9194 and molecular marker method thereof

The invention relates to a rice black-streaked dwarf virus (RBSDV) resistant locus qRBSDV9 of a rice variety 9194 and a molecular marker method thereof. Four RBSDV resistant genetic loci of the RBSDV resistant variety 9194 are obtained by carrying out genetic linkage analysis on the genotype of a single plant F2 obtained by hybridizing the RBSDV resistant rice variety 9194 (male) with a susceptible variety Suyunuo (female) and the RBSDV resistance grade of a corresponding F2:3 family, wherein qRBSDV9 is between a marker RM3912 and a marker RM257. The RBSDV resistance levels of the resistant variety 9194 and derived varieties (lines) thereof can be predicated and the selection efficiency of the RBSDV resistant rice can be greatly improved by detecting whether the resistant variety 9194 and the derived varieties (lines) thereof contain the RBSDV resistance genetic loci via the molecular markers of the RBSDV resistant genes.

Bean pulp rainbow trout parr compound feed and preparation method thereof

The invention provides a bean pulp rainbow trout parr compound feed and a preparation method thereof. Every 100kg of bean pulp rainbow trout parr compound feed is manufactured by 6 to 12kg of steam fish meal, 50 to 60kg of expanded bean pulp, 10 to 15kg of corn protein powder, 3 to 5kg of beer yeast, 0.5 to 1.0kg of Squid paste, 0.5 to 1.0kg of betaine, 2 to 6kg fo flour, 1.5 to 2.5kg of soybean lecithin, 5 to 6kg of fish oil, 5 to 63kg of soybean oil, 0.3 to 0.5kg of methionine, 0.1 to 0.3kg of lysine, 0.3 to 0.5kg of Choline Chloride, 0.5 to 1.0kg of composite vitamin, 0.5 to 1.0kg of composite mineral salt and water. The invention aims at the digesting physiological characteristic during the parr period of the rainbow trout and solves the balancing problem of amino acid by optimizing and adjusting the prescription of the feed, and solves the problems of anti-nutritional factors and palatability by comprehensively using enzyme preparation and feeding promoting agent. The invention selects ...

Propane dehydrogenation catalyst as well as preparation method and application thereof

The invention relates to a propane dehydrogenation catalyst as well as a preparation method and application thereof. The catalyst contains gallium, a first auxiliary agent, a second auxiliary agent and a composite oxide-based carrier containing silicon dioxide, the first auxiliary agent contains VIII group noble metal, and the second auxiliary agent contains alkali metal and/or alkaline earth metal; on the basis of the dry basis weight of the catalyst, the content of the gallium element in the catalyst is 0.01-10 wt%, the content of the first auxiliary agent is 0.001-0.045 wt%, and the content of the second auxiliary agent is 0.01-5 wt%; the ratio of the molar content of the second aid to the molar content of the composite oxide-based carrier containing silicon dioxide in the catalyst is 1: (5-30). The propane dehydrogenation catalyst provided by the invention has the advantages that the content of the VIII-family noble metal is low, but good dehydrogenation performance can still be maintained ...

Thiolated hydrophilic ligands for improved quantum dot reliability in resin films

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.

RADAR-BASED RANGING PROCESSING METHOD AND DEVICE, AND UNMANNED AERIAL VEHICLE

A radar-based ranging processing method includes obtaining a difference frequency signal of a radar, obtaining input spectrum amplitude data according to the difference frequency signal, obtaining, based on parallel processing, constant false alarm detection values each corresponding to one of spectrum amplitudes of the input spectrum amplitude data, obtaining a target frequency point according to the spectrum amplitudes and the corresponding constant false alarm detection values, and obtaining a distance value between the radar and an obstacle according to the target frequency point. For each spectrum amplitude, obtaining the corresponding constant false alarm detection value includes obtaining a neighboring value sequence corresponding to the spectrum amplitude and including neighboring values, performing simultaneous sorting on the neighboring values in pairs to obtain a sorted neighboring value sequence, and obtaining the constant false alarm detection value corresponding to the spectrum amplitude according to the sorted neighboring value sequence. 1. A radar-based ranging processing method comprising:obtaining a difference frequency signal of a radar;obtaining input spectrum amplitude data according to the difference frequency signal; obtaining a neighboring value sequence corresponding to the spectrum amplitude, the neighboring value sequence including N neighboring values, N being a positive integer;', 'performing simultaneous sorting on the N neighboring values in pairs for at most N times to obtain a sorted neighboring value sequence; and', 'obtaining the constant false alarm detection value corresponding to the spectrum amplitude according to the sorted neighboring value sequence;, 'obtaining, based on parallel processing, constant false alarm detection values each corresponding to one of spectrum amplitudes of the input spectrum amplitude data, wherein for each spectrum amplitude, obtaining the corresponding constant false alarm detection value ...

Novel reading inhibit agents

Disclosed is an optical disk, card or media which comprises: a) a plurality of data structures that are readable by the interrogating beam of light; and b)a composition on or in the optical disk, card or media disposed so that when the optical disk, card or media is used in the optical read-out system, the interrogating beam of light passes through the composition before or after contacting some or all of the data structures. The composition comprises a polymeric matrix with an organometallic complex dissolved therein or with metal, transition metal, metal oxide or transition metal oxide nanoparticles uniformly dispersed therein. The composition is substantially transparent to the interrogating beam and/or is substantially colorless. Alternatively, the composition comprises a solid polymeric matrix with an olefinic compound dissolved or uniformly dispersed therein wherein double bond in the olefinic compound undergoes oxidative cleavage promoted by a transition metal catalyst and a thiophenol ...

Liquid embolism agent for intracranial aneurysm and its preparing process

The invention relates to an intracranial aneurysm liquid suppository, which is prepared by mixing polysaccharide extract of bletilla striata, a crude medicinal herb with cellulose diacetate polymeride by a finite proportion, wherein the development composition is IohexoI, the dissolvent composition is dimethyl sulphoxide as organic solvent. The invention also relates to the process for preparing the liquid suppository. The liquid suppository can be applied to the interventional therapy of intracranial aneurysm.

Ultralow permeability measuring apparatu

The utility model discloses an ultralow permeability measuring apparatu, the box is located on the base, manual valve and manometer and relief pressure valve all set up on the front of box, the manual pump is fixed on the base, the rock core holder is installed on the base, the gas circuit connects the side that sets up at the box. The utility model discloses utilize pulse damped method gas permeability's definition and correlation formula, thereby obtain a result through measurement and calculation to core upstream and downstream gas pressure. Can exert three axial confined pressures to the shale sample, pressure range is 0 -70MPa, can detect the lower bound with the permeability and extend to 10 -6mD to can obtain the permeability value of rock specimen under different confined pressure conditions, permeability measuring pore pressure reaches 14MPa, is higher than ordinary permeability measuring apparatu to the permeability value that the measurable quantity is lower, pore pressure improves ...

First arrival pickup method, related method and device

The invention provides a first arrival pickup method, a related method and a related device, and the method comprises the steps: inputting a seismic data test sample into a first arrival pickup model, and obtaining the first arrival of the seismic data test sample; wherein the first arrival pickup model is obtained through the following steps: inputting a preset unlabeled sample set into a deep active learning model, and obtaining information entropy data and global features of each unlabeled sample in the preset unlabeled sample set; according to the information entropy data and the global feature of each unlabeled sample, screening to obtain a preset number of training samples; adding the marked preset number of training samples into a preset training sample set, and training the deep active learning model to obtain a trained deep active learning model; and repeating the above steps until the deep active learning model reaches the test performance conforming to the expectation, and obtaining ...

Burning reactor and burning method for propane dehydrogenation spent catalyst, and regenerator and regeneration method for propane dehydrogenation spent catalyst

The invention relates to the technical field of regeneration of a propane dehydrogenation spent catalyst, in particular to a coke-burning reactor and a coke-burning method for the propane dehydrogenation spent catalyst, and a regenerator and a regeneration method for the propane dehydrogenation spent catalyst. According to the coke-burning reactor provided by the invention, the coke-burning reactor is limited to comprise the upper combustion area and the lower combustion area which are communicated up and down, the lower combustion area is limited to comprise at least two lower coke-burning gas inlets, and the radial thickness change rule of the catalyst bed is limited, so that the lower coke-burning gas radially flows and penetrates through the catalyst bed; the carbon deposit content in the pre-burnt coked catalyst can be rapidly removed, the temperature of a catalyst bed is prevented from rising rapidly, and the situation that the catalyst is destroyed and components in the reactor are ...

Consumption supervision flow direction tracing method and system based on 5G Internet of Things, and computer storage medium

The invention discloses a consumption supervision flow tracing method and system based on the 5G Internet of Things, and a computer storage medium, through a double-node function of taking a central node as a tracing verification node and taking an auxiliary node as a tracing recording node, the access security is improved, and meanwhile, the system congestion is avoided; dual authentication is carried out on the identity of a credit user and historical consumption data under the optimal constraint condition, and real and reliable legal consumption supervision flow tracing is provided for the processes of consumption sources, consumption circulation and the like; after security authentication is passed, consumption information data is fed back to a related structure to carry out supervision, tracing and recording of consumption information and start of consumption permission, consumption service is paused and an authentication result is returned and prompted to a user terminal when an illegal ...

Non-volatile memory cells with floating gates in dedicated trenches

InP Quantum Dots with GaP and Alp Shells and Methods of Producing the Same

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures. 1. A nanostructure comprising an InP core and a first GaP or AlP shell.2. (canceled)3. The nanostructure of claim 1 , further comprising a second shell surrounding the first GaP or AlP shell.4. (canceled)5. The nanostructure of which comprises an InP core surrounded by a first GaP shell and further surrounded by a ZnS shell.6. The nanostructure of which comprises an InP core surrounded by a first AlP shell and further surrounded by a ZnS shell.7. A method of making the nanostructure of claim 1 , comprising{'sub': '3', '(a) contacting an InP core with MX, wherein M=Al or Ga, and X=an anion, and a source of phosphide in a solvent to give an InP core surrounded by a first GaP or AlP shell.'}8. The method of claim 7 , further comprising isolating the nanostructure.9. (canceled)10. The method of claim 9 , wherein the source of phosphide is (trimethylsilyl)phosphine.11. The method of claim 7 , wherein the anion is F claim 7 , Cl claim 7 , Br claim 7 , I claim 7 , OH or OSOR claim 7 , wherein R is an alkyl or an optionally alkyl substituted aryl group.12. The method of claim 7 , wherein said solvent is trioctylphosphine (TOP).13. (canceled)14. The method of claim 7 , further comprising forming a second shell surrounding the InP core and the first GaP or AlP shell.15. The method of claim 14 , wherein the second shell comprises ZnS.16. The method of claim 15 , which comprises contacting the InP core surrounded by the first GaP or AlP shell with a source of zinc and a source of sulfur in a solvent.17. (canceled)18. The method according to claim 16 , wherein the source of zinc is zinc dioleate.19. (canceled)20. The method ...

Catalyst compositions and processes for olefin polymers and copolymers

Bacillus sphaericus with high yield and high-temperature xylanase resistance and application thereof

The invention discloses a bacillus sphaericus with high yield and high-temperature xylanase resistance and an application thereof. The bacillus sphaericus is classified and named as Lysinibacillus sphaericus Xyn-1, and is collected in China Center for Type Culture Collection (CCTCC) on May, 5th, 2014 with the collection number CCTCCM2014183. The optimal fermentation enzyme production condition of a strain screening shake flask is determined by adopting a Plackett-Burman design and a response surface analysis method, and the fermentation level under the condition can reach 5678.5IU/mL. When the enzyme produced by fermentation of the strain is applied to degradation of plant hemicellulose, the xylobiose yield of the hemicellulose can reach over 60% through enzymolysis.

Rare earth oxide-modified stannic oxide varistor material and preparation method thereof

The invention discloses a rare earth oxide-modified stannic oxide varistor material. The raw material for the stannic oxide varistor material is composed of the following mixed powder by mole: 95.0 to 99.0% of stannic oxide, 0.5 to 2.0% of cobalt oxide, 0.05 to 1.0% of tantalum pentoxide, 0 to 1.0% of chrome oxide, 0.05 to 1.0% of rare earth oxide--cerium oxide and 0.05 to 1.0% of rare earth oxide--europium oxide. The stannic oxide varistor material is prepared through ball milling, granulation, molding, sintering (wherein sintering temperature is 1250 to 1500 DEG C and is maintained for 3 h), preparation of electrodes, welding of leads and encapsulation and curing. According to performance test results of the stannic oxide varistor material prepared by using the method, the stannic oxide varistor material has electrical properties like a comparable residual voltage ratio, a comparable nonlinear coefficient, higher electric potential gradient and the like compared with a commercial ZnO-based ...

Automatic bag opening production equipment

The invention relates to automatic bag opening production equipment which solves the technical problem that automatic bag opening equipment is difficult to effectively and automatically unpack caked raw materials, the automatic bag opening production equipment is provided with a bag pressing machine, a bag opening machine and a material receiving hopper which are connected in sequence, the bag pressing machine is provided with rollers which are arranged in sequence and can roll, and the upper ends of the rollers are provided with corrugated pressing plates which can ascend and descend; the bale breaker is provided with a frame, and the frame is provided with a turning plate rotating along a main shaft and a bag cutting device. A visual camera and a mechanical gripper are arranged at the upper end of the material receiving hopper, an anti-falling rod is arranged in the material receiving hopper, the visual camera is used for positioning clamped large caking materials and positions of empty ...

Low cadmium content nanostructure compositions and uses thereof

Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

Method for manufacturing grid artificial board core strip

The invention discloses a method for manufacturing a grid artificial board core strip. According to the method for manufacturing the grid artificial board core strip, wooden sheet materials serve as base materials, and the wooden sheet materials are machined into comb-shaped or arched plates in the length direction of the sheet materials; the special-shaped plates are spliced in the width direction, so that special-shaped laminates with certain widths are obtained; the special-shaped laminates are glues in a mutually crossed and stacked mode in the thickness directions, wherein the included angle, in the length direction, of every two adjacent special-shaped laminates ranges from 0 degree to 90 degrees; finally, sawing is conducted in the direction parallel to the thickness direction and perpendicular to the bisector of the included angle of the axes of every two adjacent special-shaped laminate strips. When the method is used for manufacturing the artificial board core strip, the manufactured ...

Crystal oscillator temperature characteristic automatic measuring method and system

The invention discloses a crystal oscillator temperature characteristic automatic measuring method and system. The method includes the steps that a plurality of temperature test points of a crystal oscillator to be tested are set; temperature adjusting signals are sequentially generated according to the temperature test points and sent to a crystal oscillation measurement unit to adjust environment temperature provided by the crystal oscillation measurement unit for the crystal oscillator to be tested; when the environment temperature of the crystal oscillation measurement unit reaches the temperature test points, frequency measurement signals are generated and sent to the crystal oscillation measurement unit, and frequency measurement values, in the crystal oscillation measurement unit, of the crystal oscillator to be tested are acquired; frequency measurement values corresponding to all the temperature test points are acquired, data processing is conducted on the frequency measurement ...

Spent fuel storage grillage

The invention relates to the technical field of fuel of pressurized water reactor nuclear power plants, and in particular discloses a spent fuel storage grillage. Compared with the conventional loosened grillage, the spent fuel storage grillage is a compact spent fuel storage grillage, and channels are formed on enclosing plates and baffles directly so as to form square storage cavities; neutron absorbing plates made of boron stainless steel plates are fixed in the square storage cavities, so that the grid distance of the storage grillage is reduced greatly, the number of fuel assemblies stored in a pond of unit area is increased obviously, and the economic benefit of the power plants is improved.

Electromagnetic-assisted pretreatment laser cutting equipment

The invention belongs to the field of laser cutting related technologies and discloses electromagnetic-assisted pretreatment laser cutting equipment comprising an input-output device, an integrated industrial personal computer, a laser generator, a laser cutting machine electric movement mechanism, a laser cutting head and an electromagnetic induction heating device. The input-output device, the laser generator, the laser cutting head, the laser cutting machine electric movement mechanism and the electromagnetic induction heating device are connected to the integrated industrial personal computer. The laser cutting head and the integrated industrial personal computer are connected to the laser cutting machine electric movement mechanism. The input-output device is used for inputting all process parameters to the integrated industrial personal computer. The integrated industrial personal computer is used for controlling the laser generator, the laser cutting machine electric movement mechanism ...

Gathering pipeline atress monitoring devices

The utility model discloses a gathering pipeline atress monitoring devices belongs to the oilfield machine field. The device includes: data collection station, through a plurality of temperature sensor s of first cable parallel connection to data collection station, through second cable and the electric power of being connected of data collection station, through third cable and the electric antenna element who is connected of data collection station, data controller with antenna element wireless connection, a plurality of force transducer and protection tube subassemblies of answering are answered force transducer to pass through first cable and are connected in parallel to data collection station, first cable, second cable, third cable all set up in the protection tube subassembly. The device can protect first cable, second cable, third cable to shift, break to temperature signal and stress signal are obtained to the high accuracy, and then are convenient for carry out assay and early ...

Photopolymerizable medium comprising siloxane compounds that support cationic polymerization for holographic storage

Compound represented by structural formulas (XII) and (XV): and polymerizable and holographic recording media comprising same. Variables for structural formulas (XII), (XIIA), and (XV) are defined herein.

Optical disk, card or media and method for coating of said optical disk, card or media

Catalyst compositions and processes for olefin polymers and copolymers

Superfine pipe diameter cold-cathode fluorescence lamp tube

The invention relates to a cold cathode fluorescent lamp tube having ultra-fine diameter (the outer diameter of the glass pipe for manufacturing the lamp tube is less than 6 mm). The cold cathode design, air discharging method and the application of getter all adopts a new method, which comprises a process for adopting a new cold cathode having a lead filament always exposing out of the glass pipe in the lamp manufacture process, externally connecting an air discharging pipe with the glass pipe directly, and keeping a getter in the air discharging pipe remaining on the lamp tube. The execution process of the invention comprises externally connecting one air discharging pipe on the glass pipe (bent) having fluorescent powder applied thereon directly, melting the lead filaments of two cold cathodes and respectively sealing and connecting the lead filaments with the glass pipe, positioning a non-volatile (mercury-dispensing) getter in the air discharging pipe, discharging air, dispensing mercury ...

Wood adhesive and its production process

A wood adhesive is prepared from formaldehyde, urea or phenol and the solid extract of the sewage generated by producing fibrous board by wet method through two-step reaction.

Ultrahigh-power servomotor

The invention discloses an ultrahigh-power servomotor, which belongs to the field of servomotors. The ultrahigh-power servomotor comprises a stator and a rotor; the rotor is located in the stator; the central axis of the stator is superposed with the central axis of the rotor; a double-layer winding is wound in stator slots on the stator, so that the electromotive force of the motor is close to the sine-shaped winding; the distribution pattern of the winding on the stator is short-distance distribution; the rotor comprises a rotor shaft and steel magnets; the steel magnets are fixed on the periphery of the rotor shaft; the rotor shaft at which the steel magnets are fixed is of a non-cylindrical structure; the steel magnets are non-uniform-thickness steel magnets; the cross section of each steel magnet is shaped like a reaphook, and the magnetization method is parallel magnetization. The sinusoidality of the electromotive force of the ultrahigh-power servomotor disclosed by the invention ...

Automatic welding apparatus for flange reinforcing ribs

The invention discloses an automatic welding apparatus for flange reinforcing ribs, belonging to the technical field of welding. A carrying main body of the welding apparatus is a rail-type stand, the middle position of the rear part of the stand is provided with a main shaft as a pivot of a rotary arm; the upper part of the main shaft is provided with the rotary arm the middle of which is provided with a rotary arm movable joint capable of flexion and extension, the front end of a rotary arm bracket is provided with a template clamping device, the front end of the rotary arm is provided with a magnetic roller, and a welding gun is arranged at the lower side of the front end of the rotary arm; the middle position of the front part of the stand is provided with a reinforcing rib conveying box, and the clip-type reinforcing rib conveying box adopts a square table-shaped structure. The automatic welding apparatus solves the problems of multiple rail transfers of the welding gun during the ...

用LiFeO#-[2]包覆熔融碳酸盐燃料电池氧化镍阴极的方法

... 用LiFeO#-[2]包覆熔融碳酸盐燃料电池氧化镍阴极的方法属于燃料电池领域。具体方法为：(1)制成Li#+[+]浓度为0.005-0.5mol/L的溶液；(2)采用轧辊法或流延法成型素坯，然后在还原气氛或真空下烧结将素坯烧结成多孔金属镍板，再将金属镍板或预先在空气中氧化得到的氧化镍板浸入溶液中，在真空度低于2×10#+[4]Pa条件下保持10-60分钟；(3)将上述的金属镍板或氧化镍板置于75℃的烘箱中烘干，再转移至预热到650℃的坩埚电炉中保温1-10小时；(4)将步骤(2)中得到的处理后的氧化镍板再在硝酸盐与燃料的水溶液中浸润，然后重复步骤(3)中的过程一次、或多次。本发明具有实质性特点和显著进步，明显降低氧化镍在熔融碳酸盐中的溶解速率，延长了电池的工作寿命。 ...

Stable InP quantum dots with thick shell coating and method of producing the same

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

Production method of color make-up board

The invention relates to a production method of a color make-up board, which can effectively solve the utilization problem of wastes generated in building and furniture board and wood processing. The method comprises the following steps of: drying and maintaining paulownia batten rough boards, and then shaving the four surfaces; pouring a polyvinyl acetate emulsion into a container; adding urea-formaldehyde glues and then adding potassium chloride; evenly stirring to form a mixed glue solution; filling the mixed glue solution in a felt-board machine; then putting the paulownia batten rough boards in the mixed glue solution; pressurizing the four surfaces so as to glue rough paulownia batten boards together; then sanding the rough paulownia batten boards into medium-density blank flats; coating the polyvinyl acetate emulsion layers on the upper surface and the lower surface of the blank flats, and laminating into semi-finished slabs; putting color pasters in the polyvinyl acetate emulsion ...

Combined type pump house of drainage pump station

The invention discloses a combined type pump house of a drainage pump station, which comprises a base (1), and is characterized in that the base (1) is erected with a cylinder body (2); the cylinder body is internally provided with a water pump (3); a water inlet of the water pump is arranged at the lowest position in the base (1); and a water outlet of the water pump is positioned on the wall of the cylinder body. By using the pump house, the problems that the drainage pump station is larger in occupied building space or can not be used when being born higher buoyancy force of underground water and the like can be solved.

GPS measurement house corner support device and measuring method thereof

The invention discloses a GPS measurement house corner support device and a measuring method thereof. The support device is additionally installed on a centering rod of a GPS receiver, house corner points are measured by utilizing a rapid equidistant distance intersection method of a support, and therefore the purpose of accurately measuring a house corner coordinate can be achieved. A device main body comprises a horizontal rod fixed to the centering rod of the GPS receiver, and the front end of the horizontal rod is provided with a rotatable locating clamping corner; the device further comprises a vertical rod and an oblique rod which form a right-angle tripod with the horizontal rod, and the device is fixed on the centering rod of the GPS receiver through the oblique rod. When measuring is performed, the locating clamping corner is clamped in a house corner to be measured, the GPS receiver is placed horizontally, and data are recorded; the position is changed, measuring is performed ...

BIMETALLIC CATALYST FOR PRODUCING POLYETHYLENE RESINS WITH BIMODAL MOLECULAR WEIGHT DISTRIBUTION, ITS PREPARATION AND USE

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications. © KIPO & WIPO 2007 ...

Schiff base derivatives of ruthenium and osmium olefin metathesis catalysts

Garbage and sludge high pressure themolysis processing method, system and application thereof

The invention discloses a garbage and sludge high pressure themolysis processing method, system and application thereof. The invention carries out themolysis reaction for 5min-1.5h under the conditions of 8-80atm and 150-320 DEG C and three times of dehydration drying, not only heat value of garbage and sludge is greatly improved, dehydration, benzene removing, dechloridation, deodorization, disinfection, sterilization, volume reduction, bag breaking and degradation decomposition are carried out on garbage and/or sludge and percolation liquid is treated, and clean energy and recycled self-circulation heat are taken as heat supply energy source, energy consumption is reduced; but also method in material is rejected, so as to reduce the production probability of dioxin in garbage incineration smoke. The invention realizes garbage and sludge comprehensive reclamation, including power supply, heat supply, production of multiple organic compound fertilizers and environmentally friendly building ...

OBSTACLE AVOIDANCE CONTROL METHOD FOR UNMANNED AERIAL VEHICLE, RADAR SYSTEM, AND UNMANNED AERIAL VEHICLE

An unmanned aerial vehicle (UAV) obstacle avoidance control method includes: controlling a rotation device to perform a continuous rotation that drives a radar detecting device to rotate continuously. The rotation device is disposed on a body of a UAV and carries the radar detecting device. The method also includes: acquiring detection information of the radar detecting device during the continuous rotation; and controlling the UAV to fly based on the detection information.

SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION

A method for preparing semiconductor nanocrystals is disclosed. The method includes adding one or more cation precursors and one or more anion precursors in a reaction mixture including a solvent in a reaction vessel, maintaining the reaction mixture at a first temperature and for a first time period sufficient to produce semiconductor nanocrystal seed particles of the cation and the anion, and maintaining the reaction mixture at a second temperature that is higher than the first temperature for a second time period sufficient to enlarge the semiconductor nanocrystal seed particles to produce semiconductor nanocrystals from the cation and the anion. 1. A method of preparing semiconductor nanocrystals of a semiconductor material including one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements comprisingsubjecting a mixture including a carboxylic acid compound and a first solvent in a reaction vessel to a first temperature of between about 25° C. and about 130° C.;adding one or more Group IIIA element precursors in a second solvent and one or more Group VA element precursors in a third solvent to the reaction vessel to form a reaction mixture and subjecting the reaction mixture to the first temperature for a first period of time;adding an amine to the reaction mixture and subjecting the reaction mixture to a second temperature of between about 25° C. and about 130° C. for a second period of time;subjecting the reaction mixture to a third temperature of between about 150° C. and about 300° C. for a third period of time sufficient to form semiconductor nanocrystal seed particles of predetermined size.24-. (canceled)5. The method of wherein the predetermined size is less than about 2 nm in diameter.611-. (canceled)12. The method of wherein the first temperature or second temperature is between about 70° C. and about 125° C.1315-. (canceled)16. The method of wherein the third temperature ...

Electric-control rock scrap image collecting analyzer

The invention relates to an electric-control rock scrap image collecting analyzer. A front and back travel rack, a left and right travel rack and an inlet and outlet travel rack are respectively embedded in a box body, the back side of each rack is provided with a guide groove, a front and back travel gear, a left and right travel gear and an inlet and outlet travel gear are respectively fixed with a front and back motor, a left and right motor and an inlet and outlet motor together and are engaged with the respective racks, the motors are fixed in the respective rack box bodies to enable the front and back travel rack, the left and right travel rack and the inlet and outlet travel rack to be movably matched together through the guide grooves from bottom to top, and the front and back travel rack, the left and right travel rack and the inlet and outlet travel rack form an included angle of 90 DEG, and four material cups are fixed at the back side of the inlet and outlet travel rack; and ...

Production workshop for 55mPHC tubular pile

The invention discloses a production workshop for a 55m PHC tubular pile, the workshop plans to adopt a traveling crane on the basis of the original planar layout, the procedures of mold-closing and stretching-centrifugal operation-steam curing under normal pressure-removal from mold are arranged in two areas, which minimizes the movement distance of a template in one circle ( the movement distance of an upper die (in two areas) is that 55m multiplied by 2 is equal to 110m ), so the efficiency is high; the normal pressure curing area is besides the centrifuge, thus guaranteeing the security and smaller influence of the noise on workers. The technical improvement leads the workshop provided by the invention to be reasonable in layout, smooth in technique; besides, the production efficiency can be improved while the space can be saved.

PHOTOPOLYMERIZABLE MEDIUM COMPRISING SILOXANE COMPOUNDS THAT SUPPORT CATIONIC POLYMERIZATION FOR HOLOGRAPHIC STORAGE

Compound represented by structural formulas (XII) and (XV), and polymerizable and holographic recording media comprising same. Variables for structural formulas (XII), (XIIA), and (XV) are defined herein. © KIPO & WIPO 2008 ...

Catalyst compositions and processes for olefin polymers and copolymers

The present invention is directed to certain novel late transition metal salicylaldimine chelates and, further, to novel bidentate ligand compounds of substituted salicylaldimine, and their utility as polymerization catalysts alone or in combination with adjunct agent and/or Lewis base in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized olefin monomers.

RADAR DEVICE, WIRELESS ROTATING DEVICE OF RADAR, AND UNMANNED AERIAL VEHICLE

An unmanned aerial vehicle (UAV) includes a housing and a radar device. The radar device is mounted at the housing and includes a base, an antenna assembly, a power transmitter assembly, and a power receiver assembly. The antenna assembly is arranged at the base and configured to rotate relative to the base around a rotation axis. The power transmitter assembly is configured to convert first electric power into electromagnetic energy and transmit the electromagnetic energy. The power receiver assembly is disposed at a distance from the power transmitter assembly, is electrically connected to the antenna assembly, and is configured to rotate with the antenna assembly, convert the received electromagnetic energy into electric power and deliver the electric power to the antenna assembly.

Catalyst compositions and processes for olefin oligomerization and polymerization

Catalyst for the production of olefin polymers

Catalyst compositions and processes for olefin oligomerization and polymerization

Selective breeding method of special rice variety for nephrosis and diabetes patients

The present invention is development of special rice variety for nephrosis and diabetes patients and belongs to the development of new rice variety. Through the analysis of rice in storage protein content, protein coponents, SDS-PAGE, SSR mark, etc., the molecular mark selection, the measurement of SDS-PAGE, protein content, etc., new rice variety W3660 with water soluble protein content less than 4% is developed.

Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition steps

BIMETALLKATALYSATOR ZUR ETHYLENPOLYMERISATION MIT BIMODALER MOLEKULARGEWICHTSVERTEILUNG, DESSEN HERSTELLUNG UND VERWENDUNG

Rice black-streaked dwarf virus (RBSDV) resistant locus qRBSDV11 of rice variety 9194 and molecular marker method thereof

The invention relates to a rice black-streaked dwarf virus (RBSDV) resistant locus qRBSDV11 of a rice variety 9194 and a molecular marker method thereof. Four RBSDV resistant genetic loci of the RBSDV resistant variety 9194 are obtained by carrying out genetic linkage analysis on the genotype of a single plant F2 obtained by hybridizing the RBSDV resistant rice variety 9194 (male) with a susceptible variety Suyunuo (female) and the RBSDV resistance grade of a corresponding F2:3 family, wherein qRBSDV11 is between a marker RM26062 and a marker RM536. The RBSDV resistance levels of the resistant variety 9194 and derived varieties (lines) thereof can be predicated, and the selection efficiency of the RBSDV resistant rice can be greatly improved by detecting whether the resistant variety 9194 and the derived varieties (lines) thereof contain the RBSDV resistance genetic loci via the molecular markers of the RBSDV resistant genes.

Dry application glue fiberboard and preparation method thereof

The present invention relates to building decorating material, and is especially one kind of fiber board. The fiber board is produced through pipe gluing, dry gluing, hot pressing to form rough fiber board, sanding, and cutting to required size. The production process with pipe gluing and dry gluing has 10-30 % reduced glue consumption, lowered production cost, lowered heat consumption and other advantages.

Variable fractional order viscous acoustic wave equation attenuation compensation reverse time migration method and system

The invention discloses a variable fractional order viscous acoustic wave equation attenuation compensation reverse time migration method and system.The variable fractional order viscous acoustic wave equation attenuation compensation reverse time migration method comprises the following steps that a viscous acoustic wave equation for stable attenuation compensation is constructed by introducing a regularization item; and on the basis of the viscous acoustic wave equation for stable attenuation compensation, attenuation compensation reverse time migration of the viscous acoustic wave is carried out by adopting a local cross-correlation imaging condition based on the Nyquist sampling theorem. According to the method, a regularization term adding method is adopted, so that the exponential growth of high-frequency noise in seismic records in the compensation process can be effectively inhibited, and the numerical value stability in the attenuation compensation process is ensured; the local ...

Small molecule passivation of quantum dots for increased quantum yield

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

InP quantum dots with GaP and AlP shells and methods of producing the same

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.

Detecting test paper

The invention relates to a detecting test paper, in particular to a dry chemical test paper for detecting the content of the analyzed object in the blood sample. The detecting test paper comprises a sample adding layer, a reacting layer, a base plate and a liquid-locking component, wherein the sample adding layer, the reacting layer and the base plate are vertically arranged from the top to bottom; at least one side of the reacting layer is provided with the liquid-locking component; and the speed of the liquid-locking component for absorbing the liquid is less than or equal to the speed of the reacting layer for absorbing the liquid. As the liquid-locking component is capable of absorbing the redundant liquid sample, the redundant sample does not flow out of the range of the test paper, and the phenomenon of polluting the environment or the sample contacting to the detector is avoided.

Valve body processing equipment for simultaneously finishing tapping and forming of five holes

The invention discloses valve body processing equipment for simultaneously finishing tapping and forming of five holes, comprising five groups of tapping devices which are same and are distributed on the same horizontal circumference according to set angles and a clamping moving device which is arranged at the center of the circular surface, wherein each tapping device comprises a first cylinder,a second cylinder, an upper circular disc, a lower circular disc, a first drive motor and a second drive motor, a hole-opening cutter and a tapping cutter; the first cylinder and the second cylinder are respectively fixed on the circumferences of the upper circular disc and the lower circular disc, are connected with the first drive motor and the second drive motor and can lead the first drive motor and the second drive motor to be moved horizontally; the hole-opening cutter and the tapping cutter are respectively arranged at the output ends of the first drive motor and the second drive motorand ...

Novel dusting method of bi-helix fluorescent lamp

The invention discloses a novel coating method for a double helix fluorescent tube, and aims to overcome the defects that the prior method has low luminous efficiency, wastes valuable fluorescent powder and increases the energy of tube baking caused by serious uneven thickness of powder layers, which are inevitably produced by the prior coating process. The technical proposal is as follows: paste is quantificationally injected into a port of a double helix clear tube, then (hot) gas blowing is performed to the port while the clear tube (super-thin tube diameter, can be not rotated) is rotated, so that the quantificational paste in the port moves along the part without being coated with the paste on the inner wall of the clear tube under the combined action of gravity and gas pressure, until each place needing the fluorescent powder in the clear tube is evenly coated and the quantificational paste is basically used up. In the steps of drying the paste and tube baking, (hot) gas blowing needs ...

Releasing device

The invention relates to a releasing device for finishing impact drop tests of a dangerous goods transport packaging container. Three optical sensors are respectively arranged in a hook body, a motor and a suspender or a swinging ring are respectively fixed on the upper end surface of the hook body, a locking rod is arranged between two side walls on the hook body through a locking rod drift bolt, the locking rod drift bolt and the locking rod are in clearance fit, a motor rod connected with the motor passes through the upper end of the hook body and extends out of the locking rod body, an electric pin fixed with the locking rod supports one end of the locking rod, the motor rod and the hook body are in clearance fit, a suspension hook is arranged between the two side walls on the hook body through a suspension hook drift bolt, the suspension hook drift bolt and the suspension hook are in clearance fit, and the upper end of the suspension hook and the locking rod are blocked and matched ...

Garbage and sludge high pressure themolysis processing method, system and application thereof

The invention discloses a garbage and sludge high pressure themolysis processing method, system and application thereof. The invention carries out themolysis reaction for 5min-1.5h under the conditions of 8-80atm and 150-320 DEG C and three times of dehydration drying, not only heat value of garbage and sludge is greatly improved, dehydration, benzene removing, dechloridation, deodorization, disinfection, sterilization, volume reduction, bag breaking and degradation decomposition are carried out on garbage and/or sludge and percolation liquid is treated, and clean energy and recycled self-circulation heat are taken as heat supply energy source, energy consumption is reduced; but also method in material is rejected, so as to reduce the production probability of dioxin in garbage incineration smoke. The invention realizes garbage and sludge comprehensive reclamation, including power supply, heat supply, production of multiple organic compound fertilizers and environmentally friendly building ...

Reading inhibit agents

Disclosed is an optical disk, card or media which comprises: a) a plurality of data structures that are readable by the interrogating beam of light; and b)a composition on or in the optical disk, card or media disposed so that when the optical disk, card or media is used in the optical read-out system, the interrogating beam of light passes through the composition before or after contacting some or all of the data structures. The composition comprises a polymeric matrix with an organometallic complex dissolved therein or with metal, transition metal, metal oxide or transition metal oxide nanoparticles uniformly dispersed therein. The composition is substantially transparent to the interrogating beam and/or is substantially colorless. Alternatively, the composition comprises a solid polymeric matrix with an olefinic compound dissolved or uniformly dispersed therein wherein double bond in the olefinic compound undergoes oxidative cleavage promoted by a transition metal catalyst and a thiophenol ...

Clinical laboratory is with urine collection system

The utility model relates to the field of medical equipment, especially relate to a clinical laboratory is with urine collection system, the device comprises a device body, the device body comprises cup and handle, the rim of a cup of cup is equipped with a triangle -shaped cup mouth, the cup is equipped with the measurement scale outward, the handle sets up on the cup, and the handle comprises two parts, through folding leg joint between two parts, the handle all is provided with the pad that absorbs water with the outside of cup, be provided with the baffle on the cup, the cup comprises upper and lower two parts, swing joint between two parts. The utility model discloses an advantage embodies: the utility model discloses it is more reasonable to construct, does not have unnecessary auxiliary assembly, and manufacturing cost is relatively low, and the price is cheap relatively.

Traumatic injury treating medicine

Method for preparing composite floor core material using bark of dahurian larch as raw material

The invention discloses a preparation method of a composite floor core material taking larch bark as a raw material, and belongs to a manufacturing method of floor substrates. The preparation method solves the problems of deficient forest resources, the low utilization rate and serious waste of the larch. The preparation method comprises the following steps: (1) crushing the larch bark into small pieces; (2) drying the small pieces obtained in the step (1) until the water content thereof reaches 3-5%; (3) evenly blending a phenolic resin adhesive and the small pieces of the larch bark in an adhesive blender, wherein, the adhesive application amount is 8-10% of the small pieces of the larch bark based on weight percentage; and (4) performing single layer structural felting and hot pressing on the small pieces of the bark which are applied with the adhesive by a felting machine to prepare the floor core material taking the larch bark as the raw material. The floor core material saves wood ...

Malt nectar water

The invention relates to malt nectar water and belongs to the technical field of beverage processing. The malt nectar water is a malt juice beverage prepared through the following steps: performing primary stirring and mixing on pre-prepared barley malt juice, wheat malt juice and hawthorn juice in a certain proportion further adding additives according to a certain formula, performing secondary stirring, seasoning and color-mixing; and then sequentially performing rough filtration, secondary filtration, fine filtration, homogenization, sterilization, bottling, inspection, warehousing and the like. Domestic traditional health care food materials are selected for producing the modern beverage, thereby providing the malt juice beverage with malt faint scent and a health care function for consumers. The malt nectar water breaks through the technical bottleneck of the malt juice beverage and obtains substantive progress in the aspects of preparation of malt juice, improvement of taste, saving ...

Method Of Making Split Gate Non-volatile Flash Memory Cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region. 1. A method of forming a non-volatile memory cell comprising:providing a semiconductor substrate having a memory cell region and a logic circuit region;forming a pair of conductive floating gates disposed over and insulated from the memory cell region of the substrate;forming a first source region in the substrate between the pair of floating gates;forming a polysilicon layer over and insulated from the substrate in the memory cell region and the logic circuit region, wherein the polysilicon layer extends up and over, and is insulated from, the pair of conductive floating gates;forming an oxide layer over the polysilicon layer in the memory cell and logic circuit regions;forming a BARC layer over the oxide layer in the memory cell and logic circuit regions;removing portions of the BARC and oxide layers disposed over the floating gates while maintaining portions of the BARC and oxide layers spaced apart from the floating gates in the memory cell region and disposed in the logic circuit region;performing a first polysilicon etch to remove a portion of the polysilicon layer over the pair of floating gates such that a ...

In-situ aeration zone solution monitoring device and in-situ aeration zone ammonia nitrogen enhanced nitration system and method

The invention discloses an in-situ aeration zone solution monitoring device and an in-situ aeration zone ammonia nitrogen enhanced nitration system and method. The in-situ aeration zone solution monitoring device comprises a pump and at least one solution collection pipe (8) arranged in an aeration zone, wherein the solution collection pipe (8) comprises a guide part (13) and a collection part (12) which are arrayed along the axial direction; the collection part (12) is provided with a hollow cavity and through holes are formed in the wall of the collection part (12); and the pump is communicated with the hollow cavity of the collection part (12). The in-situ aeration zone ammonia nitrogen enhanced nitration system comprises a first operation well (1) adjacent to a garbage body (6) in the aeration zone and the in-situ aeration zone solution monitoring device; and at least one water distribution pipe (3) is arranged from the well wall of the first operation well (1) to the garbage body ( ...

SEMICONDUCTOR NANOCRYSTALS AND METHODS OF PREPARATION

A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed. 1. A method for preparing semiconductor nanocrystals , the method comprising:adding one or more cation precursors and one or more anion precursors to a mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, andreacting at least a portion of the one or more cation precursors and one or more anion precursors at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition.2. A method in accordance with wherein the mixture including one or more acids claim 1 , one or more phenol compounds is heated prior to adding any precursors.3. A method in accordance with wherein the mixture including one or more acids claim 1 , one or more phenol compounds is heated to a temperature sufficient for initiating reaction of the precursors.4. A method in accordance with further including optionally heating or maintaining the reaction mixture at a second temperature sufficient to produce the ...

Method Of Forming Split-Gate Flash Memory Cell With Spacer Defined Floating Gate And Discretely Formed Polysilicon Gates

A method of forming a memory device that includes forming a first polysilicon layer using a first polysilicon deposition over a semiconductor substrate, forming an insulation spacer on the first polysilicon layer, and removing some of the first polysilicon layer to leave a first polysilicon block under the insulation spacer. A source region is formed in the substrate adjacent a first side surface of the first polysilicon block. A second polysilicon layer is formed using a second polysilicon deposition. The second polysilicon layer is partially removed to leave a second polysilicon block over the substrate and adjacent to a second side surface of the first polysilicon block. A third polysilicon layer is formed using a third polysilicon deposition. The third polysilicon layer is partially removed to leave a third polysilicon block over the source region. A drain region is formed in the substrate adjacent to the second polysilicon block. 1. A method of forming a memory device , comprising:forming a first polysilicon layer using a first polysilicon deposition over and insulated from a semiconductor substrate;forming an insulation spacer on the first polysilicon layer;removing some of the first polysilicon layer so as to leave a block of the first polysilicon layer under the insulation spacer, wherein the block of the first polysilicon layer has opposing first and second side surfaces;forming a source region in the substrate adjacent the first side surface;forming a second polysilicon layer using a second polysilicon deposition over the substrate;removing some of the second polysilicon layer so as to leave a block of the second polysilicon layer that is over and insulated from the substrate, and adjacent to and insulated from the second side surface;forming a third polysilicon layer using a third polysilicon deposition over the substrate;removing some of the third polysilicon layer so as to leave a block of the third polysilicon layer that is over and insulated from the ...

Method of Forming Split Gate Memory Cells

A method of forming a memory device includes forming a second insulation layer on a first conductive layer formed on a first insulation layer formed on semiconductor substrate. A trench is formed into the second insulation layer extending down and exposing a portion of the first conductive layer, which is etched or oxidized to have a concave upper surface. Two insulation spacers are formed along sidewalls of the trench, having inner surfaces facing each other and outer surfaces facing away from each other. A source region is formed in the substrate between the insulation spacers. The second insulation layer and portions of the first conductive layer are removed to form floating gates under the insulation spacers. A third insulation layer is formed on side surfaces of the floating gates. Two conductive spacers are formed along the outer surfaces. Drain regions are formed in the substrate adjacent the conductive spacers. 1. A method of forming a memory device , comprising:forming a first insulation layer on an upper surface of a semiconductor substrate;forming a first conductive layer on the first insulation layer;forming a second insulation layer on the first conductive layer;forming a trench into the second insulation layer that extends down to and exposes a portion of the first conductive layer;etching or oxidizing the exposed portion of the first conductive layer such that the exposed portion has a concave upper surface;forming first and second insulation spacers along sidewalls of the trench and over respective portions of the concave upper surface, wherein the first and second insulation spacers have inner surfaces that face each other and outer surfaces that face away from each other;forming a source region in a portion of the substrate below and between the first and second insulation spacers;removing the second insulation layer;removing portions of the first conductive layer to form a first block of the first conductive layer under the first insulation spacer ...

Method Of Making Split Gate Non-volatile Flash Memory Cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region. 1. A method of forming a non-volatile memory cell comprising:providing a semiconductor substrate having a memory cell region and a logic circuit region;forming a pair of conductive floating gates disposed over and insulated from the memory cell region of the substrate;forming a first source region in the substrate between the pair of floating gates;forming a polysilicon layer over and insulated from the substrate in the memory cell region and the logic circuit region, wherein the polysilicon layer extends up and over, and is insulated from, the pair of conductive floating gates;performing a first polysilicon etch to remove portions of the polysilicon layer such that a first block of the polysilicon layer between the floating gates and over the first source region is separated from remaining portions of the polysilicon layer;forming an oxide layer over the substrate in the memory cell region and the logic circuit region;forming a first block of photoresist on the polysilicon layer in a first portion of the logic circuit region;performing an oxide etch to remove portions of the oxide layer except for at least spacers of ...

Method Of Making Split Gate Non-volatile Flash Memory Cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region. 1. A method of forming a non-volatile memory cell comprising:providing a semiconductor substrate having a memory cell region and a logic circuit region;forming a pair of conductive floating gates disposed over and insulated from the memory cell region of the substrate;forming a first source region in the substrate between the pair of floating gates;forming a polysilicon layer over and insulated from the substrate in the memory cell region and the logic circuit region, wherein the polysilicon layer extends up and over, and is insulated from, the pair of conductive floating gates;performing a spin-on process to form a coating over the polysilicon layer in the memory cell and logic circuit regions; a first block of the polysilicon layer disposed over the substrate and between the pair of conductive floating gate,', 'a second block of the polysilicon layer disposed over the substrate with one of the pair of floating gates disposed between the first and second blocks of the polysilicon layer,', 'a third block of the polysilicon layer disposed over the substrate with the other of the pair of floating gates disposed between ...

METHOD FOR CONTROLLING UNMANNED AIRCRAFT, SERVER, AND REMOTE CONTROL DEVICE

A method for controlling an unmanned aerial vehicle (“UAV”) includes receiving locking instruction information from a user terminal for locking the UAV. The method also includes transmitting a locking command to a remote control device of the UAV based on the locking instruction information, to instruct the remote control device to lock the UAV based on the locking command. 1. A method for controlling an unmanned aerial vehicle (“UAV”) , comprising:receiving locking instruction information from a user terminal for locking the UAV; andtransmitting a locking command to a remote control device of the UAV based on the locking instruction information, to instruct the remote control device to lock the UAV based on the locking command.2. The method of claim 1 , wherein prior to receiving the locking instruction information from the user terminal for locking the UAV claim 1 , the method further comprises:obtaining task performing information uploaded by the UAV in real time while the UAV performs a task; andtransmitting the task performing information to the user terminal.3. The method of claim 2 , wherein the task performing information comprises at least one of a flight location claim 2 , a flight velocity claim 2 , a flight height claim 2 , or an aerial photographing image.4. The method of claim 1 ,wherein the locking instruction information comprises a scheduled locking time, andwherein transmitting the locking command to the remote control device of the UAV based on the locking instruction information comprises:based on the locking instruction information, when the scheduled locking time arrives, transmitting the locking command to the remote control device of the UAV to lock the UAV.5. The method of claim 1 ,wherein the locking instruction information comprises an authorized flight mileage, and obtaining a total flight mileage travelled by the UAV after use of the UAV is authorized; and', 'when the total flight mileage of the UAV reaches the authorized flight mileage, ...

Method Of Making Memory Cells, High Voltage Devices And Logic Devices On A Substrate With Silicide On Conductive Blocks

A method of forming a semiconductor device includes recessing the upper surface of first and second areas of a semiconductor substrate relative to the third area of the substrate, forming a pair of stack structures in the first area each having a control gate over a floating gate, forming a first source region in the substrate between the pair of stack structures, forming an erase gate over the first source region, forming a block of dummy material in the third area, forming select gates adjacent the stack structures, forming high voltage gates in the second area, forming a first blocking layer over at least a portion of one of the high voltage gates, forming silicide on a top surface of the high voltage gates which are not underneath the first blocking layer, and replacing the block of dummy material with a block of metal material. 1. A method of forming a semiconductor device , comprising:providing a substrate of semiconductor material that includes a first area, a second area and a third area;recessing an upper surface of the substrate in the first area and an upper surface of the substrate in the second area relative to an upper surface of the substrate in the third area;forming a pair of stack structures in the first area, wherein each of the stack structures includes a floating gate of conductive material disposed over and insulated from the upper surface of the substrate in the first area and a first non-floating gate of conductive material disposed over and insulated from the floating gate;forming a first source region in the substrate between the pair of stack structures in the first area;forming a second non-floating gate disposed over and insulated from the first source region in the first area;forming a block of dummy material disposed over and insulated from the upper surface of the substrate in the third area;forming third non-floating gates of conductive material disposed over and insulated from the upper surface of the substrate in the first area and ...

Microwave radar distance measuring method, microwave radar, computer storage medium, unmanned aerial vehicle and control method thereof

The present disclosure provides an unmanned aerial vehicle (UAV) control method. The method includes controlling a microwave radar disposed on the UAV to transmit a microwave signal while rotating around a rotating shaft; acquiring a frequency of an intermediate frequency signal based on a frequency of the transmitted signal and a frequency of an echo signal; determining a distance between the UAV and a surrounding obstacle based on the frequency of the intermediate frequency signal; and adjusting a flight path of the UAV based on the distance between the UAV and the surrounding obstacle.

Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cells Using Two Polysilicon Deposition Steps

A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. A pair of spaced apart insulation blocks are formed on the first polysilicon layer. Exposed portions of the first poly silicon layer are removed while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation blocks. A second polysilicon layer is formed over the substrate and the pair of insulation blocks in a second polysilicon deposition process. Portions of the second polysilicon layer are removed while maintaining a first polysilicon block (disposed between the pair of insulation blocks), a second polysilicon block (disposed adjacent an outer side of one insulation block), and a third polysilicon block (disposed adjacent an outer side of the other insulation block). 1. A method of forming a pair of non-volatile memory cells comprising:forming a first insulation layer on a semiconductor substrate;forming a first polysilicon layer on the first insulation layer in a first polysilicon deposition process;forming a pair of spaced apart insulation blocks on the first polysilicon layer, each of the insulation blocks having first sides facing toward each other and second sides facing away from each other;removing portions of the first polysilicon layer while maintaining portions of the first polysilicon layer disposed underneath the pair of insulation blocks and between the pair of insulation blocks;forming a pair of spaced apart insulation spacers adjacent the first sides and over a portion of the first polysilicon layer disposed between the pair of insulation blocks;removing a portion of the first polysilicon layer disposed between the insulation spacers while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation ...

METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMORY CELLS, HIGH VOLTAGE DEVICES AND FINFET LOGIC DEVICES

A method of forming memory cells, HV devices and logic devices on a substrate, including recessing the upper surface of the memory cell and HV device areas of the substrate, forming a polysilicon layer in the memory cell and HV device areas, forming first trenches through the first polysilicon layer and into the silicon substrate in the memory cell and HV device areas, filling the first trenches with insulation material, forming second trenches into the substrate in the logic device area to form upwardly extending fins, removing portions of the polysilicon layer in the memory cell area to form floating gates, forming erase and word line gates in the memory cell area, HV gates in the HV device area, and dummy gates in the logic device area from a second polysilicon layer, and replacing the dummy gates with metal gates that wrap around the fins. 1. A method of forming a device , comprising:providing a silicon substrate with an upper surface and having first, second and third areas;recessing the upper surface in the first and second areas of the substrate, but not in the second area of the substrate;forming a first polysilicon layer over and insulated from the upper surface in the first and second areas;forming first trenches through the first polysilicon layer and into the silicon substrate in the first and second areas but not in the third area, using at least a first silicon etch;filling the first trenches with insulation material;after the filling of the first trenches, forming second trenches into the silicon substrate in the third area using at least a second silicon etch to form an upwardly extending fin of the silicon substrate having a pair of side surfaces extending up and terminating at a top surface;after the forming of the fin, forming a pair of blocks of material over the first polysilicon layer in the first area;removing portions of the first polysilicon layer in the first area to form a pair of floating gates of the first polysilicon layer each disposed ...

SPLIT-GATE, 2-BIT NON-VOLATILE MEMORY CELL WITH ERASE GATE DISPOSED OVER WORD LINE GATE, AND METHOD OF MAKING SAME

A memory device includes a semiconductor substrate, first and second regions in the substrate having a conductivity type different than that of the substrate, with a channel region in the substrate extending between the first and second regions. The channel region is continuous between the first and second regions. A first floating gate is disposed over and insulated from a first portion of the channel region. A second floating gate is disposed over and insulated from a second portion of the channel region. A first coupling gate is disposed over and insulated from the first floating gate. A second coupling gate is disposed over and insulated from the second floating gate. A word line gate is disposed over and insulated from a third portion of the channel region between the first and second channel region portions. An erase gate is disposed over and insulated from the word line gate. 17-. (canceled)8. A method of forming a memory cell , comprising:forming a first insulation layer on a semiconductor substrate having a first conductivity type;forming a first conductive layer on the first insulation layer;forming a second insulation layer on the first conductive layer;forming a second conductive layer on the second insulation layer;forming a third insulation layer on the second conductive layer;forming a trench that extends through the third insulation layer, the second conductive layer, and the second insulation layer;forming insulation spacers along a sidewall of the trench;extending the trench through the first conductive layer between the insulation spacers;forming a word line gate in the trench, wherein the word line gate is disposed vertically over and insulated from the substrate;forming an erase gate in the trench, wherein the erase gate is disposed vertically over and insulated from the word line gate;removing portions of the second conductive layer while maintaining first and second portions of the second conductive layer as respective first and second ...

SPLIT-GATE NON-VOLATILE MEMORY CELLS WITH ERASE GATES DISPOSED OVER WORD LINE GATES, AND METHOD OF MAKING SAME

A memory device, and method of making the same, that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions, a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region, a first coupling gate disposed over and insulated from the first floating gate, a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region, and a first erase gate disposed over and insulated from the first word line gate. 12-: (canceled)3. The memory device of claim 4 , wherein the first floating gate is partially disposed over and insulated from the second region claim 4 , and the second floating gate is partially disposed over and insulated from the third region.4. A memory device claim 4 , comprising:a substrate of semiconductor material of a first conductivity type;first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a first channel region in the substrate extending between the first and second regions;a first floating gate disposed over and insulated from a first portion of the first channel region adjacent to the second region;a first coupling gate disposed over and insulated from the first floating gate;a first word line gate disposed over and insulated from a second portion of the first channel region adjacent the first region;a first erase gate disposed over and insulated from the first word line gate;a third region in the substrate having the second conductivity type, with a second channel region in the substrate extending between the first and third regions;a second floating gate disposed over and insulated from a first ...

ADVERTISEMENT OPPORTUNITY BIDDING

A demand-side platform (DSP) may bid on advertising opportunities (e.g., provided by a supply-side platform (SSP)) on behalf of an advertiser wishing to place an advertisement, such as part of an advertisement campaign. A target advertisement may be selected based upon various criteria, and a bid for the target advertisement to run during the advertising opportunity is made in a manner that satisfies one or more goals of the advertisement campaign while also being beneficial to the DSP. For example, the target advertisement may be selected from a reduced problem space where merely advertisements corresponding to a target advertising opportunity class are evaluated, where the target opportunity class corresponds to an opportunity class of the advertising opportunity. Win rate modeling data, inventory cost modeling data, user response modeling data, and/or other information may be used to select the target advertisement. 1. A method for advertising opportunity bidding , comprising:receiving an advertising call, the advertising call requesting one or more bids for an advertising opportunity;evaluating a set of advertising opportunity classes to identify a target advertising opportunity class of which the advertising opportunity is indicative;identifying a group of advertisements, from a plurality of available advertisements, as corresponding to the target advertising opportunity class;evaluating a set of assignment probability parameters, associated with the target advertising opportunity class and the group of advertisements, to determine a target advertisement within the group of advertisements; andsubmitting a bid, at a bid value associated with the target advertising opportunity class and the target advertisement, on behalf of the target advertisement for the advertising opportunity.2. The method of claim 1 , the identifying a group of advertisements comprising:identifying an advertising opportunity context associated with the advertising opportunity;evaluating a ...

SPLIT GATE NON-VOLATILE MEMORY CELLS, HV AND LOGIC DEVICES WITH FINFET STRUCTURES, AND METHOD OF MAKING SAME

A method of forming memory cells, high voltage devices and logic devices on fins of a semiconductor substrate's upper surface, and the resulting memory device formed thereby. The memory cells are formed on a pair of the fins, where the floating gate is disposed between the pair of fins, the word line gate wraps around the pair of fins, the control gate is disposed over the floating gate, and the erase gate is disposed over the pair of fins and partially over the floating gate. The high voltage devices include HV gates that wrap around respective fins, and the logic devices include logic gates that are metal and wrap around respective fins.

METHOD FOR CONTROLLING UNMANNED AIRCRAFT, SERVER, AND REMOTE CONTROL DEVICE

A method for controlling an unmanned aerial vehicle (UAV) includes receiving locking instruction information for locking the UAV; remotely controlling, based on the locking instruction information, a remote control device of the UAV to lock the UAV; and remotely controlling, after controlling the remote control device to lock the UAV, the remote control device to unlock the UAV. 1. A method for controlling an unmanned aerial vehicle (UAV) , comprising:receiving locking instruction information for locking the UAV;remotely controlling, based on the locking instruction information, a remote control device of the UAV to lock the UAV; andremotely controlling, after controlling the remote control device to lock the UAV, the remote control device to unlock the UAV.2. The method of claim 1 , further comprising:receiving log-in information input by an operator;if information of the operator corresponding to the log-in information does not belong to information of an operator bound with the UAV, controlling the remote control device to not allow the operator corresponding to the log-in information to log in or operate the UAV.3. The method of claim 1 , further comprising: determining a task performing quality level for the UAV based on a coincidence level between a predetermined specification of the task and actual performance of the task; and', 'transmitting the task performing quality level to a user terminal., 'after the UAV completes a task,'}4. The method of claim 3 , wherein the predetermined specification of the task includes at least one of a flight path claim 3 , a flight height claim 3 , a task performing time claim 3 , or an amount of the task.5. The method of claim 1 , further comprising: receiving an operation command input by an operator for controlling the UAV; and', 'controlling the remote control device to abandon execution of the operation command., 'after locking the UAV based on the locking instruction information,'}6. The method of claim 5 , further ...

UNMANNED AERIAL VEHICLE CONTROL METHOD AND UNMANNED AERIAL VEHICLE

An unmanned aerial vehicle including a controller is provided. The controller is configured to determine a first relative height between the unmanned aerial vehicle and a ground reflector directly below the unmanned aerial vehicle and a second relative height between the unmanned aerial vehicle and a ground reflector ahead the unmanned aerial vehicle. The controller then determines a combined relative height for reflecting a front terrain change according to at least the first relative height and the second relative height. Based on the determined combined relative height, the controller further adjusts the flight attitude of the unmanned aerial vehicle. 1. An unmanned aerial vehicle , comprising: a controller , the controller being configured to:determine a first relative height between the unmanned aerial vehicle (UAV) and a ground reflector directly below the UAV and a second relative height between the UAV and a ground reflector ahead the UAV;determine, according to at least the first relative height and the second relative height, a combined relative height for reflecting a front terrain change; andcontrol a flight attitude of the UAV according to the combined relative height.2. The unmanned aerial vehicle according to claim 1 , wherein determining claim 1 , by the controller claim 1 , the combined relative height for reflecting the front terrain change according to at least the first relative height and the second relative height further includes:determining a first estimated height according to the first relative height and a predicted relative height for predicting the front terrain change;determining a second estimated height according to the second relative height and the predicted relative height; anddetermining the combined relative height according to the first estimated height and the second estimated height.3. The unmanned aerial vehicle according to claim 2 , wherein determining claim 2 , by the controller claim 2 , the combined relative height ...

Stable inp quantum dots with thick shell coating and method of producing the same

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSe x S 1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

Non-volatile Memory Cell Having A Floating Gate And A Coupling Gate With Improved Coupling Ratio Therebetween

A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed. 1. A non-volatile memory cell comprising:a semiconductor substrate of a first conductivity type having a top surface;a first region of a second conductivity type in said substrate along the top surface;a second region of the second conductivity type, in said substrate along the top surface, spaced apart from the first region;a channel region between the first region and the second region;a word line gate positioned over a first portion of the channel region, immediately adjacent to the first region, said word line gate spaced apart from the channel region by a first insulating layer;a floating gate positioned over another portion of the channel region, said floating gate having a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface; said floating gate having a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall, wherein said upper surface having a non-planar contour from said first side wall to said second side wall;a coupling gate positioned over the upper surface of the floating gate and insulated therefrom by a third insulating layer, said coupling gate having a lower surface that has a contour that follows the contour of said upper surface of said floating gate; andan erase gate positioned adjacent to the second side wall of the floating gate; said erase gate positioned over the second region and insulated therefrom.2. The memory cell of wherein said upper surface of said floating gate has a step like non-planar contour.3. The memory cell of wherein said erase gate overhangs a portion of said floating gate.4. The memory cell of wherein said first side wall is taller than ...

TARGET DETECTION METHOD AND DEVICE, UNMANNED AERIAL VEHICLE, AND AGRICULTURAL UNMANNED AERIAL VEHICLE

A method of detecting target signals includes obtaining detection signals from a detection device, the detection device being to detect a target object around an unmanned aerial vehicle, selecting a test signal and neighboring signals from the detection signals, determining a signal threshold corresponding to the test signal according to the neighboring signals, and determining whether the test signal includes a target signal from the target object according to the signal threshold. 1. A method of detecting target signals , comprising:obtaining detection signals from a detection device, the detection device being to detect a target object around an unmanned aerial vehicle;selecting a test signal and neighboring signals from the detection signals;determining a signal threshold corresponding to the test signal according to the neighboring signals; anddetermining whether the test signal includes a target signal from the target object according to the signal threshold.2. The method of claim 1 , wherein the detection device includes at least one of a radar detection device claim 1 , a time-of-flight (TOF) detection device claim 1 , an ultrasonic detection device claim 1 , and a visual detection device.3. The method of claim 1 , wherein determining the signal threshold corresponding to the test signal according to the neighboring signals includes:selecting a predetermined number of neighboring signals;obtaining a baseline signal strength from the neighboring signals; anddetermining the signal threshold according to the baseline signal strength.4. The method of claim 1 , wherein the neighboring signals include a first number of neighboring test signals and a second number of neighboring signals claim 1 , the method further comprising:sending one of the first number of neighboring signals to a sliding window detector at a first timepoint;sending one of the second number of neighboring signals to the sliding window detector at a second timepoint;sending the test signal into ...

A method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby

A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface, spaced apart from the first region. A channel region is the first region and the second region. A word line gate is positioned over a first portion of the channel region, immediately adjacent to the first region. The word line gate is spaced apart from the channel region by a first insulating layer. A floating gate is positioned over another portion of the channel region. The floating gate has a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface. The floating gate has a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall. The second side wall and the upper surface form a sharp edge, with the second side wall greater in length than the first side wall. The upper surface slopes upward from the first side wall to the second side wall. A coupling gate is positioned over the upper surface of the floating gate and is insulated therefrom by a third insulating layer. An erase gate is positioned adjacent to the second side wall of the floating gate. The erase gate is positioned over the second region and insulated therefrom.

METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH MEMORY CELLS, HIGH VOLTAGE DEVICES AND LOGIC DEVICES ON A SUBSTRATE

A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the three areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in all three areas, forming a protective layer in the first and second areas and then removing the third conductive layer from the third area, then forming blocks of dummy conductive material in the third area, then etching in the first and second areas to form select and HV gates, and then replacing the blocks of dummy conductive material with blocks of metal material. 1. A method of forming a semiconductor device , comprising:providing a substrate of semiconductor material that includes a first area, a second area and a third area;recessing an upper surface of the substrate in the first area and an upper surface of the substrate in the second area relative to an upper surface of the substrate in the third area;forming a first conductive layer disposed over and insulated from the upper surfaces in the first and second and third areas;forming an insulation layer on the first conductive layer in the first and second and third areas;thinning the insulation layer in the third area without thinning the insulation layer in the first and second areas;forming trenches through the insulation layer and the first conductive layer, and into the substrate, in the first, second and third areas;filling the trenches with insulation material;after the filling of the trenches, removing the insulation layer from the first, second and third areas;forming a second conductive layer disposed over and insulated from the first conductive layer in the first and second and third areas;performing one or more etches ...

OPERATION METHOD OF AN AGRICULTURE UAV

An operation method of an unmanned aerial vehicle (UAV) includes determining a distance between the UAV and a ground reflector in front of the UAV by using a radar wave emitted obliquely downward by a radar carried by the UAV, determining terrain information in front of the UAV according to the distance between the UAV and the ground reflector in front of the UAV, and adjusting one or more operation parameters of the UAV according to the terrain information. 1. An operation method of an unmanned aerial vehicle (UAV) comprising:determining a distance between the UAV and a ground reflector in front of the UAV by using a radar wave emitted obliquely downward by a radar carried by the UAV;determining terrain information in front of the UAV according to the distance between the UAV and the ground reflector in front of the UAV; andadjusting one or more operation parameters of the UAV according to the terrain information.2. The method of claim 1 , wherein the one or more operation parameters include at least one of a route parameter or a task parameter.3. The method of claim 2 , further comprising:controlling a flight attitude of the UAV according to the route parameter.4. The method of claim 2 , further comprising:controlling a task status of the UAV according to the task parameter.5. The method of claim 1 , wherein determining the terrain information in front of the UAV includes: the distance between the UAV and the ground reflector in front of the UAV, and', 'an angle between an emission direction of the radar wave of the radar and a horizontal direction; and, 'determining a horizontal distance and a vertical distance between the UAV and the ground reflector in front of the UAV according todetermining the terrain information in front of the UAV according to the horizontal distance and the vertical distance.6. The method of claim 5 , further comprising:determining the emission direction of the radar wave of the radar according to a direction of an antenna of the radar.7. ...

SPLIT-GATE FLASH MEMORY CELL WITH IMPROVED CONTROL GATE CAPACITIVE COUPLING, AND METHOD OF MAKING SAME

A method of forming a memory device that includes forming a first insulation layer, a first conductive layer, and a second insulation layer on a semiconductor substrate, forming a trench in the second insulation layer to expose the upper surface of the first conductive layer, performing an oxidation process and a sloped etch process to reshape the upper surface to a concave shape, forming a third insulation layer on the reshaped upper surface, forming a conductive spacer on the third insulation layer, removing portions of the first conductive layer leaving a floating gate under the conductive spacer with the reshaped upper surface terminating at a side surface at a sharp edge, and forming a word line gate laterally adjacent to and insulated from the floating gate. The conductive spacer includes a lower surface that faces and matches the shape of the reshaped upper surface. 1. A method of forming a memory device , comprising:forming a first insulation layer on an upper surface of a semiconductor substrate;forming a first conductive layer on the first insulation layer;forming a second insulation layer on the first conductive layer;forming a trench in the second insulation layer that exposes an upper surface portion of the first conductive layer;performing an oxidation process and a sloped etch process to reshape the upper surface portion of the first conductive layer at a bottom of the trench from a planar shape to a concave shape;forming a third insulation layer on the reshaped upper surface portion of the first conductive layer at the bottom of the trench;forming a conductive spacer in the trench and on the third insulation layer;removing portions of the first conductive layer, leaving a floating gate of the first conductive layer under the conductive spacer and includes the upper surface portion with the concave shape terminating at a side surface of the floating gate at a sharp edge, faces the upper surface portion of the floating gate,', 'has a shape matching the ...

Method Of Forming Pairs Of Three-Gate Non-volatile Flash Memory Cells Using Two Polysilicon Deposition Steps

A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. A pair of spaced apart insulation blocks are formed on the first polysilicon layer. Exposed portions of the first poly silicon layer are removed while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation blocks. A second polysilicon layer is formed over the substrate and the pair of insulation blocks in a second polysilicon deposition process. Portions of the second polysilicon layer are removed while maintaining a first polysilicon block (disposed between the pair of insulation blocks), a second polysilicon block (disposed adjacent an outer side of one insulation block), and a third polysilicon block (disposed adjacent an outer side of the other insulation block). 1. A method of forming a pair of non-volatile memory cells comprising:forming a first insulation layer on a semiconductor substrate;forming a first polysilicon layer on the first insulation layer in a first polysilicon deposition process;forming a pair of spaced apart insulation blocks on the first polysilicon layer, each of the insulation blocks having first sides facing toward each other and second sides facing away from each other;removing portions of the first polysilicon layer while maintaining portions of the first polysilicon layer disposed underneath the pair of insulation blocks and between the pair of insulation blocks;forming a pair of spaced apart insulation spacers adjacent the first sides and over a portion of the first polysilicon layer disposed between the pair of insulation blocks;removing a portion of the first polysilicon layer disposed between the insulation spacers while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation ...

CONTINUOUS WAVE RADAR TERRAIN PREDICTION METHOD, DEVICE, SYSTEM, AND UNMANNED AERIAL VEHICLE

A terrain prediction method includes obtaining N pieces of ranging data obtained by a continuous wave radar performing ranging on ground during rotation and when a rotation angle of the continuous wave radar is in a predetermined angle range, excluding outliers from the N pieces of ranging data to obtain M pieces of ranging data, and determining a terrain parameter of the ground according to the M pieces of ranging data. N is an integer greater than 1. M is a positive integer smaller than N. The terrain parameter includes at least one of a slope, a flatness, or a height value of the continuous wave radar to the ground directly below. 1. A terrain prediction method comprising:obtaining N pieces of ranging data obtained by a continuous wave radar performing ranging on ground during rotation and when a rotation angle of the continuous wave radar is in a predetermined angle range, N being an integer greater than 1;excluding outliers from the N pieces of ranging data to obtain M pieces of ranging data, M being a positive integer smaller than N; anddetermining a terrain parameter of the ground according to the M pieces of ranging data, the terrain parameter including at least one of a slope, a flatness, or a height value of the continuous wave radar to the ground directly below.2. The method of claim 1 , wherein one piece of ranging data includes:a horizontal distance and a vertical distance of the continuous wave radar to a ranging point of the ground, the ranging point of the ground changing as the rotation angle of the continuous wave radar changes.3. The method of claim 1 , wherein excluding the outliers from the N pieces of ranging data to obtain the M pieces of ranging data includes:obtaining at least two pieces of ranging data from the N pieces of ranging data;performing linear fitting on the at least two pieces of ranging data to obtain a linear function; andexcluding the outliers from the N pieces of ranging data according to the linear function to obtain the M ...

Method and System for Enhanced Content Recommendation

Method, system, and programs for providing content recommendation are disclosed. A first set of candidate content items may be generated based on a user profile, and a second set of candidate items may be generated based on the likelihood that the user will click a corresponding candidate content item in the second set. The candidate content items in the first and second sets may be ranked together using a learning model and presented to the user as content recommendations based on their rankings. The likelihood that the user will click a given candidate content item in the second set may be estimated based on similarities between the given content item and content items related to the given content item. Such a similarity may be computed based on activities performed by users who have viewed both the given content item and a related content item. 1. A method , implemented on a machine having at least one processor , storage , and a communication platform connected to a network , for recommending , to a user , content items , the method comprising:obtaining a user profile characterizing interests of the user;generating a first set of candidate content items based on the user profile;generating a second set of candidate content items based on a likelihood that the user clicks a corresponding candidate content item in the second set, wherein each likelihood is estimated based on similarities between the candidate content items in the second set and one or more content items that were previously viewed by the user;ranking each of the candidate content items in the first set and the second set; andproviding, based on the rankings, the candidate content items in the first and second sets as content recommendations to the user.2. The method of claim 1 , wherein the likelihood of a candidate item in the second set is estimated by:obtaining a set of related content items that are related to the candidate item and that were previously viewed by the user;determining, for each ...

InP Quantum Dots with GaP and AlP Shells and Methods of Producing the Same

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures. 1. A nanostructure comprising an InP core and a first GaP or AlP shell.2. The nanostructure of claim 1 , comprising an alloy between the InP and the first GaP or AlP shell.3. The nanostructure of claim 1 , further comprising a second shell surrounding the first GaP or AlP shell.4. The nanostructure of claim 3 , wherein the second shell is selected from the group consisting of CdS claim 3 , CdSe claim 3 , CdO claim 3 , CdTe claim 3 , ZnS claim 3 , ZnO claim 3 , ZnSe claim 3 , ZnTe claim 3 , MgTe claim 3 , GaAs claim 3 , GaSb claim 3 , GaN claim 3 , HgO claim 3 , HgS claim 3 , HgSe claim 3 , HgTe claim 3 , InAs claim 3 , InSb claim 3 , InN claim 3 , AlAs claim 3 , AlN claim 3 , AlSb claim 3 , AlS claim 3 , PbS claim 3 , PbO claim 3 , PbSe claim 3 , PbTe claim 3 , MgO claim 3 , MgS claim 3 , MgSe claim 3 , MgTe claim 3 , CuCl claim 3 , Ge claim 3 , Si and alloys thereof.5. The nanostructure of which comprises an InP core surrounded by a first GaP shell and further surrounded by a ZnS shell.6. The nanostructure of which comprises an InP core surrounded by a first AlP shell and further surrounded by a ZnS shell.7. A method of making the nanostructure of claim 1 , comprising{'sub': '3', '(a) contacting an InP core with MX, wherein M=Al or Ga, and X=an anion, and a source of phosphide in a solvent to give an InP core surrounded by a first GaP or AlP shell.'}8. The method of claim 7 , further comprising isolating the nanostructure.9. The method of claim 7 , wherein the source of phosphide is a (trialkylsilyl)phosphine.10. The method of claim 9 , wherein the (trialkylsilyl)phosphine is (trimethylsilyl)phosphine.11. The ...

METHOD AND APPARATUS FOR DETECTING RADAR WAVE OFFSET

A method includes receiving first measurement data acquired by a radar based on radar signals reflected by a member of a movable device. The method also includes calculating an angle based on the first measurement data. The method also includes comparing the angle with a predetermined reference angle to obtain a difference. The method also includes adjusting an obstacle detection angle of the radar based on the difference. The method further includes causing the radar to scan an environment in the adjusted obstacle detection angle. 1. A movable platform , comprising:a body; and obtain the measurement data using one or more members of a movable platform as the detection target;', 'determine detection information relating to the one or more members of the movable platform based on the measurement data; and', 'determine whether the distance measuring sensor needs to be calibrated based on the detection information., 'a distance measuring sensor mounted on the body, the distance measuring sensor comprising a signal transceiver and a controller electrically coupled with the signal transceiver, the signal transceiver configured to obtain measurement data relating to a detection target, the controller configured to2. The movable platform of claim 1 , wherein the detection information comprises at least one of geometric dimension information claim 1 , location information claim 1 , an azimuth angle of the one or more members relative to the distance measuring sensor claim 1 , a tilt angle of the one or more members relative to the distance measuring sensor claim 1 , coordinates of the one or more members relative to the distance measuring sensor claim 1 , a length of the one or more members claim 1 , a height of the one or more members claim 1 , a width of the one or more members claim 1 , or a shape of the one or more members.3. The movable platform of claim 1 , wherein the distance measuring sensor comprises at least one of a microwave radar claim 1 , a laser radar claim ...

Method Of Making Split Gate Non-volatile Flash Memory Cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region.

Twin Bit Non-volatile Memory Cells With Floating Gates In Substrate Trenches

A twin bit memory cell includes first and second spaced apart floating gates formed in first and second trenches in the upper surface of a semiconductor substrate. An erase gate, or a pair of erase gates, are disposed over and insulated from the floating gates, respectively. A word line gate is disposed over and insulated from a portion of the upper surface that is between the first and second trenches. A first source region is formed in the substrate under the first trench, and a second source region formed in the substrate under the second trench. A continuous channel region of the substrate extends from the first source region, along a side wall of the first trench, along the portion of the upper surface that is between the first and second trenches, along a side wall of the second trench, and to the second source region. 1. A twin bit memory cell , comprising:a semiconductor substrate having an upper surface;first and second trenches formed into the upper surface and spaced apart from each other;a first floating gate of conductive material disposed in the first trench and insulated from the substrate;a second floating gate of conductive material disposed in the second trench and insulated from the substrate;a first erase gate of conductive material disposed over and insulated from the first floating gate;a second erase gate of conductive material disposed over and insulated from the second floating gate;a word line gate of conductive material disposed over and insulated from a portion of the upper surface that is between the first and second trenches;a first source region formed in the substrate under the first trench;a second source region formed in the substrate under the second trench;wherein a continuous channel region of the substrate extends from the first source region, along a side wall of the first trench, along the portion of the upper surface that is between the first and second trenches, along a side wall of the second trench, and to the second ...

Non-volatile Memory Cells With Floating Gates In Dedicated Trenches

A pair of memory cells that includes first and second spaced apart trenches formed into the upper surface of a semiconductor substrate, and first and second floating gates disposed in the first and second trenches. First and second word line gates disposed over and insulated from a portion of the upper surface that is adjacent to the first and second floating gates respectively. A source region is formed in the substrate laterally between the first and second floating gates. First and second channel regions extend from the source region, under the first and second trenches respectively, along side walls of the first and second trenches respectively, and along portions of the upper surface disposed under the first and second word line gates respectively. The first and second trenches only contain the first and second floating gates and insulation material respectively. 1. A pair of memory cells , comprising:a semiconductor substrate having an upper surface;first and second trenches formed into the upper surface and spaced apart from each other;a first floating gate of conductive material disposed in the first trench and insulated from the substrate;a second floating gate of conductive material disposed in the second trench and insulated from the substrate;an erase gate of conductive material having a first portion extending into the upper surface, and disposed laterally between and insulated from the first and second floating gates;a first word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the first floating gate;a second word line gate of conductive material disposed over and insulated from a portion of the upper surface that is adjacent to the second floating gate;a source region formed in the substrate laterally between the first and second floating gates and vertically under the first portion of the erase gate;a first drain region formed in a portion of the upper surface adjacent to the first ...

METHOD OF FORMING SPLIT-GATE, TWIN-BIT NON-VOLATILE MEMORY CELL

A memory device that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a continuous channel region in the substrate extending between the first and second regions. A first floating gate is disposed over and insulated from a first portion of the channel region adjacent to the first region. A second floating gate is disposed over and insulated from a second portion of the channel region adjacent to the second region. A word line gate is disposed over and insulated from a third portion of the channel region between the first and second channel region portions. A first erase gate disposed over and insulated from the first region. A second erase gate disposed is over and insulated from the second region. 1. A method of forming a pair of non-volatile memory cells comprising:forming a first insulation layer on a semiconductor substrate;forming a first polysilicon layer on the first insulation layer in a first polysilicon deposition process;forming spaced apart first and second insulation blocks on the first polysilicon layer, the first insulation block having a first side facing the second insulation block and a second side facing away from the second insulation block, and the second insulation block having a first side facing the first insulation block and a second side facing away from the first insulation block;removing a portion of the first polysilicon layer disposed between the first and second insulation blocks while maintaining portions of the first polysilicon layer disposed underneath the first and second insulation blocks and adjacent the second sides of the first and second insulation blocks;removing the portions of the first polysilicon layer adjacent the second sides of the first and second insulation blocks while maintaining a pair of polysilicon blocks of the first polysilicon layer each ...

Cadmium Free Reverse Type 1 Nanostructures with Improved Blue Light Absorption for Thin Film Applications

The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures. 1. A nanostructure comprising:a core; anda first shell disposed on the core, the first shell comprising a first semiconductor material comprising InP; anda second shell disposed on the first shell, the second layer comprising a second semiconductor material,wherein the band gap energy of the core is greater than the band gap energy of the first shell, and{'sub': '450', 'wherein the optical density at 450 nm per total mass (OD/total mass) of the nanostructure is between about 0.4 and about 0.9.'}2. The nanostructure of claim 1 , wherein the core comprises ZnSe.34-. (canceled)5. The nanostructure of claim 1 , wherein the diameter of the core is about 4 nm.67-. (canceled)8. The nanostructure of claim 1 , wherein the thickness of the first shell is about 0.5 nm.911-. (canceled)12. The nanostructure of claim 1 , wherein the thickness of the second shell is about 1 nm.13. (canceled)14. The nanostructure of claim 1 , wherein the second shell comprises ZnSe claim 1 , ZnS claim 1 , or a combination thereof.1516-. (canceled)17. The nanostructure of claim 1 , wherein the OD/total mass of the nanostructure is about 0.7.18. The nanostructure of claim 1 , wherein the blue transmittance of the nanostructure when present in a film matrix is less than or equal to about 15% claim 1 , wherein the film matrix has a thickness between about 1 μm and about 25 μm and comprises between about 10% and about 60% of the nanostructures by dry mass claim 1 , wherein the film matrix has a blue absorbance at 450 nm of less than 1% when not comprising the nanostructures claim 1 , wherein the blue transmittance is defined as the fraction of an incident light transmitted through the film matrix claim 1 , and wherein the incident light has a ...

SEMICONDUCTOR NANOCRYSTALS, METHOD FOR PREPARING, AND PRODUCTS

A method for preparing semiconductor nanocrystals includes adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell including a semiconductor material to the mixture under conditions for forming the shell over at least a portion of an outer surface of the cores, and adding an acid ligand to the mixture after addition of at least a portion of the one or more precursors. Semiconductor nanocrystals, other methods of making semiconductor nanocrystals, compositions and products including semiconductor nanocrystals are also disclosed. 1. A method for preparing semiconductor nanocrystals , the method comprising: adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell comprising a semiconductor material to the mixture under conditions for forming the shell over at least a portion of an outer surface of the cores , and adding an acid ligand to the mixture after addition of at least a portion of the one or more precursors.2. A method in accordance with wherein one or more non-acid ligands are further included in the mixture before addition of the precursors.3. A method in accordance with wherein one or more non-acid ligands are added to the mixture during addition of the precursors.4. A method in accordance with wherein one or more non-acid ligand sources are added to the mixture following addition of the precursors.5. A method in accordance with wherein the non-protonated surface modification agent comprises a carboxylic acid ester.6. A method in accordance with wherein the non-protonated surface modification agent comprises a carboxylic acid anhydride.7. A method in accordance with wherein the non-protonated surface modification agent comprises a phosphonic acid ester.8. A method in accordance with wherein the non-protonated surface ...

MICROWAVE RADAR AND UNMANNED AERIAL VEHICLE

The present disclosure provides a UAV control method. The method includes controlling an antenna device of a microwave radar of the UAV to transmit a microwave transmission signal and obtain a received signal, the microwave transmission signal and the received signal both being trapezoidal modulation waveforms, and one cycle of the trapezoidal modulation waveform including a frequency rising part, a frequency falling part, and a fixed frequency part; obtaining an intermediate frequency signal mixed by a frequency of the microwave transmission signal and the received signal to the radar controller, and determining whether the received signal is an interference signal based on the intermediate frequency signal; determining coordinate information of a detection target corresponding to the received signal if the received signal is not the interference signal; and updating a trajectory of the UAV based on the coordinate information of the detection target. 1. A UAV control method comprising:controlling an antenna device of a microwave radar of the UAV to transmit a microwave transmission signal and obtain a received signal, the microwave transmission signal and the received signal both being trapezoidal modulation waveforms, and one cycle of the trapezoidal modulation waveform including a frequency rising part, a frequency falling part, and a fixed frequency part;obtaining an intermediate frequency signal mixed by a frequency of the microwave transmission signal and the received signal to the radar controller, and determining whether the received signal is an interference signal based on the intermediate frequency signal;determining coordinate information of a detection target corresponding to the received signal if the received signal is not the interference signal; andupdating a trajectory of the UAV based on the coordinate information of the detection target.2. The UAV control method of claim 1 , wherein determining whether the received signal is the interference ...

PARALLELIZATION METHOD FOR BLACK-START SUBSYSTEMS OF POWER GRID WITH EXTERNAL SUPPORT

The invention relates to a parallelization method for black-start subsystems of a power grid with external support, which includes, after power blackout, partitioning the power grid into subsystems, and respectively performing black-start on the subsystems based on a power grid black-start research scheme, performing stability check on each subsystem, performing voltage calculation on parallel lines between the subsystems, checking the parallelizing simulation of the subsystems, and determining a feasible parallelizing path and a recommendable charging direction. The method further includes, starting from the subsystems having external support and higher stability, networking them with an external power grid, parallelizing the networked subsystems having external support to obtain a subnet of the subsystems, parallelizing subsystems having no external support with the subnet of the subsystems to obtain a regional subnet, and finally parallelizing the remaining subsystems with the regional subnet to implement parallelization of black-start subsystems of the whole power grid. 1. A parallelization method for black-start subsystems of a power grid with external support , comprising the steps of:(A) after the power grid blackout, partitioning the power grid into subsystems, and respectively performing black-start on the subsystems, according to a black-start research scheme;(B) performing stability check on each subsystem having restoration to more than 30% of a normal load by using power system simulation software, so as to obtain a stable level of each subsystem;(C) continuously restoring load for an unstable subsystem, and performing stability check once when every 5% of the normal load is increased, so as to obtain stable levels of the subsystems, until the subsystems are all stable;(D) performing voltage calculation on parallel lines between the subsystems by using power system simulation software, primarily determining unavailable parallel paths so as to obtain ...

Low Cadmium Content Nanostructure Compositions and Uses Thereof

Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

SMALL MOLECULE PASSIVATION OF QUANTUM DOTS FOR INCREASED QUANTUM YIELD

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided. 1. A nanostructure composition comprising:(a) at least one population of nanostructures, the nanostructures comprising a nanocrystal core and at least one shell;(b) at least one metal halide bound to the surface of the nanostructures; and(c) at least one metal carboxylate bound to the surface of the nanostructures.2. The nanostructure composition of claim 1 , wherein the nanocrystal core is selected from the group consisting of Si claim 1 , Ge claim 1 , Sn claim 1 , Se claim 1 , Te claim 1 , B claim 1 , C claim 1 , P claim 1 , BN claim 1 , BP claim 1 , BAs claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , GaN claim 1 , GaP claim 1 , GaAs claim 1 , GaSb claim 1 , InN claim 1 , InP claim 1 , InAs claim 1 , InSb claim 1 , ZnO claim 1 , ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , CdS claim 1 , CdSe claim 1 , CdSeZn claim 1 , CdTe claim 1 , HgS claim 1 , HgSe claim 1 , HgTe claim 1 , BeS claim 1 , BeSe claim 1 , BeTe claim 1 , MgS claim 1 , MgSe claim 1 , GeS claim 1 , GeSe claim 1 , GeTe claim 1 , SnS claim 1 , SnSe claim 1 , SnTe claim 1 , PbO claim 1 , PbS claim 1 , PbSe claim 1 , PbTe claim 1 , CuF claim 1 , CuCl claim 1 , CuBr claim 1 , Cu claim 1 , SiN claim 1 , GeN claim 1 , AlO claim 1 , AlCO claim 1 , and combinations thereof.3. The nanostructure composition of claim 1 , wherein the nanocrystal core comprises InP.4. ( ...

THIN SHELL QUANTUM DOTS FOR ENHANCED BLUE LIGHT ABSORPTION

The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and at least two thin shell layers. The nanostructures may have additional shell layers. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures. 1. A nanostructure comprising a nanocrystal core and at least two thin shells , wherein at least one thin shell has a thickness of between about 0.01 nm and about 1.0 nm , and wherein the nanostructure exhibits an optical density at 450 nm on a per mass basis of between about 0.30 cm/mg and about 0.50 cm/mg.2. (canceled)3. The nanostructure of claim 1 , wherein the nanocrystal core comprises InP.45-. (canceled)6. The nanostructure of claim 1 , wherein at least one thin shell has a thickness of between about 0.01 nm and about 0.3 nm.7. The nanostructure of claim 1 , wherein at least one thin shell comprises ZnSe.8. The nanostructure of claim 1 , wherein at least one thin shell comprises ZnS.9. The nanostructure of claim 1 , wherein at least one thin shell comprises ZnSe and at least one thin shell comprises ZnS.10. The nanostructure of claim 1 , comprising a first thin shell and a second thin shell claim 1 , wherein the first thin shell has a thickness of between about 0.01 nm and about 2.5 nm.1113-. (canceled)14. The nanostructure of claim 1 , wherein the nanostructure exhibits an optical density at 450 nm on a per mass basis of between about 0.30 cm/mg and about 0.40 cm/mg.15. (canceled)16. The nanostructure of claim 1 , comprising a first thin shell and a second thin shell claim 1 , wherein the first thin shell comprises ZnSe and has a thickness between about 0.25 nm and about 0.8 nm claim 1 , and wherein the second thin shell comprises ZnS and has a thickness between about 0.09 nm and about 0.3 nm.17. A method of making the nanostructure of claim 1 , comprising ...

TERRAIN PREDICTION METHOD, DEVICE AND SYSTEM, AND UNMANNED AERIAL VEHICLE

An unmanned aerial vehicle (UAV) includes a radar configured to perform ranging on a ground during rotation and a terrain prediction device communicatively connected to the radar. The terrain prediction device includes a memory storing a computer program and a processor configured to execute the computer program to acquire N pieces of ranging data each being obtained by the radar when a rotation angle of the radar is within a preset angle interval, and determining a terrain parameter of the ground according to the N pieces of ranging data. N is an integer greater than 1. The terrain parameter includes at least one of a gradient or a flatness. 1. An unmanned aerial vehicle (UAV) comprising:a radar configured to perform ranging on a ground during rotation; and a memory storing a computer program; and', acquire N pieces of ranging data each being obtained by the radar when a rotation angle of the radar is within a preset angle interval, N being an integer greater than 1; and', 'determining a terrain parameter of the ground according to the N pieces of ranging data, the terrain parameter including at least one of a gradient or a flatness., 'a processor configured to execute the computer program to], 'a terrain prediction device communicatively connected to the radar and including2. The UAV of claim 1 , wherein the each of the N pieces of ranging data includes a horizontal distance and a vertical distance of the radar from a ground ranging point claim 1 , the ground ranging point varying with the rotation angle of the radar.3. The UAV of claim 1 , wherein the processor is further configured to execute the computer program to:perform a linear fitting on the N pieces of ranging data by a least square method to obtain a linear function; anddetermine the terrain parameter of the ground according to the linear function.4. The UAV of claim 3 , wherein the processor is further configured to execute the computer program to: a vertical distance between the radar and a ground ...

OBSTACLE-AVOIDANCE CONTROL METHOD FOR UNMANNED AERIAL VEHICLE (UAV), FLIGHT CONTROLLER AND UAV

An obstacle-avoidance control method comprises acquiring a distance between an unmanned aerial vehicle (UAV) and a front object in a flying direction of the UAV; and controlling a flying altitude of the UAV according to the distance between the UAV and the front object. 1. An obstacle-avoidance control method comprising:acquiring a distance between an unmanned aerial vehicle (UAV) and a front object in a flying direction of the UAV; andcontrolling a flying altitude of the UAV according to the distance between the UAV and the front object.2. The method of claim 1 , wherein controlling the flying altitude of the UAV according to the distance between the UAV and the front object comprises:in response to determining that the distance between the UAV and the front object is smaller than a preset first safety distance and greater than a preset second safety distance, increasing the flying altitude of the UAV, wherein the first safety distance is greater than the second safety distance.3. The method of claim 2 , further comprising:increasing the flying altitude of the UAV to increase the distance between the UAV and the front object to be greater than or equal to the first safety distance.4. The method of claim 2 , further comprising:in response to determining that the distance between the UAV and the front object is smaller than the second safety distance, adjusting a flight trajectory of the UAV or controlling the UAV to stop flying in the flying direction.5. The method of claim 4 , wherein adjusting the flight trajectory of the UAV comprises one of the following:adjusting a heading angle of the UAV to enable the flight trajectory of the UAV to bypass the front object; andincreasing the flying altitude of the UAV to enable the flight trajectory of the UAV to pass over the front object.6. The method of claim 4 , wherein controlling the UAV to stop flying in the flying direction comprises:controlling the UAV to be in a hovering state.7. The method of claim 2 , further ...

Decreased Photon Reabsorption in Emissive Quantum Dots

The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and a thin inner shell layer. The nanostructures may have an additional outer shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures. 1. A nanostructure comprising a nanocrystal core and at least one thin inner shell , wherein the at least one thin inner shell has a thickness of between about 0.01 nm and about 0.35 nm , and wherein the nanostructure exhibits an effective Stokes shift of between about 25 nm and about 125 nm.2. The nanostructure of claim 1 , wherein the nanocrystal core is selected from the group consisting of Si claim 1 , Ge claim 1 , Sn claim 1 , Se claim 1 , Te claim 1 , B claim 1 , C claim 1 , P claim 1 , BN claim 1 , BP claim 1 , BAs claim 1 , AlN claim 1 , AlP claim 1 , AlAs claim 1 , AlSb claim 1 , GaN claim 1 , GaP claim 1 , GaAs claim 1 , GaSb claim 1 , InN claim 1 , InP claim 1 , InAs claim 1 , InSb claim 1 , ZnO claim 1 , ZnS claim 1 , ZnSe claim 1 , ZnTe claim 1 , CdS claim 1 , CdSe claim 1 , CdSeZn claim 1 , CdTe claim 1 , HgS claim 1 , HgSe claim 1 , HgTe claim 1 , BeS claim 1 , BeSe claim 1 , BeTe claim 1 , MgS claim 1 , MgSe claim 1 , GeS claim 1 , GeSe claim 1 , GeTe claim 1 , SnS claim 1 , SnSe claim 1 , SnTe claim 1 , PbO claim 1 , PbS claim 1 , PbSe claim 1 , PbTe claim 1 , CuF claim 1 , CuCl claim 1 , CuBr claim 1 , CuI claim 1 , SiN claim 1 , GeN claim 1 , AlO claim 1 , AlCOand combinations thereof.3. (canceled)4. The nanostructure of claim 1 , wherein the at least one thin inner shell is selected from the group consisting of CdS claim 1 , CdSe claim 1 , CdO claim 1 , CdTe claim 1 , ZnS claim 1 , ZnO claim 1 , ZnSe claim 1 , ZnTe claim 1 , MgTe claim 1 , GaAs claim 1 , GaSb claim 1 , GaN claim 1 , HgO claim 1 , HgS claim 1 , HgSe claim 1 , HgTe claim 1 , ...

OBSTACLE AVOIDANCE METHOD FOR UNMANNED AERIAL VEHICLE AND UNMANNED AERIAL VEHICLE

An obstacle avoidance method for an unmanned aerial vehicle (UAV) includes determining a flight trajectory of an obstacle relative to the UAV according to measurement data output by a radar arranged at the UAV, and performing an obstacle avoidance according to the flight trajectory of the obstacle. 1. An obstacle avoidance method for an unmanned aerial vehicle (UAV) comprising:determining a flight trajectory of an obstacle relative to the UAV according to measurement data output by a radar arranged at the UAV; andperforming an obstacle avoidance according to the flight trajectory of the obstacle.2. The method of claim 1 , wherein determining the flight trajectory of the obstacle relative to the UAV includes:determining a predicted waypoint of the obstacle at a current moment according to a previous flight trajectory of the obstacle relative to the UAV at a previous moment;determining a correlation wave gate according to the predicted waypoint;determining whether one or more current echoes of the radar detected at the current moment fall within the correlation wave gate; andin response to the one or more current echoes falling within the correlation wave gate, determining a current waypoint of the flight trajectory according to the measurement data corresponding to the one or more current echoes.3. The method of claim 2 , wherein:the one or more current echoes falling within the correlation wave gate include one current echo falling within the correlation wave gate; anddetermining the current waypoint of the flight trajectory includes determining the measurement data corresponding to the one current echo as the current waypoint of the flight trajectory.4. The method of claim 2 , wherein:the one or more current echoes falling within the correlation wave gate include a plurality of current echoes falling within the correlation wave gate; and selecting one current echo from the plurality of current echoes; and', 'determining the measurement data corresponding to the ...

SYSTEMS AND METHODS FOR COMMERCIAL QUERY SUGGESTION

Systems and methods for commercial query suggestion are disclosed. The system includes a database including search logs. The system includes a set of initial suggestion phrases extracted from the database. The system includes a search engine that generates a query search result based on a query and generates a suggestion search result based on each suggestion phrase in the set of initial suggestion phrases. The system includes a feature generation device that generates a query vector and a suggestion vector based on the query search result and the suggestion search result. The system obtains a relevance score for each suggestion phrases based on a relevance model. The system includes a subset of the initial suggestion phrases based on the relevance scores. The system obtains a click probability score for each suggestion phrases in the subset of initial suggestion phrases based on a click model. 1. A system comprising a processor and a non-transitory storage medium accessible to the processor , the system comprising:a database comprising search logs that comprises bid-terms and previous queries;a set of initial suggestion phrases extracted from the database based on frequency of appearance;a search engine in communication with the database, the search engine configured to generate a query search result based on a query and generate a suggestion search result based on each suggestion phrase in the set of initial suggestion phrases;a feature generation device configured to generate a query vector and a suggestion vector based on the query search result and the suggestion search result;a relevance score for each suggestion phrases in the set of initial suggestion phrases based on a relevance model;a subset of the initial suggestion phrases based on the relevance scores; anda click probability score for each suggestion phrases in the subset of initial suggestion phrases based on a click model.2. The system of claim 1 , wherein the subset of the initial suggestion phrases ...

CADMIUM FREE BLUE ABSORBING II-VI QUANTUM DOTS FOR THIN FILM APPLICATIONS

The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnTe core and CdS, CdSe, CdTe, ZnS, ZnSe, or ZnTe shell layers. The nanostructures show strong absorbance at 450 nm and have a high OD/mass ratio. The invention also relates to methods of producing such nanostructures.

STABLE INP QUANTUM DOTS WITH THICK SHELL COATING AND METHOD OF PRODUCING THE SAME

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSeSmonolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption. 1. A multi-layered nanostructure comprising a core and at least two shells , wherein at least two of the shells comprise different shell material , and wherein the thickness of at least one of the shells is between 0.7 nm and 3.5 nm.2. The multi-layered nanostructure of claim 1 , wherein the core comprises InP.3. The multi-layered nanostructure of claim 1 , wherein at least one shell comprises ZnS.4. The multi-layered nanostructure of claim 1 , wherein at least one shell comprises ZnSe.5. The multi-layered nanostructure of claim 1 , wherein the thickness of at least one of the shells is between 0.9 nm and 3.5 nm.6. (canceled)7. The multi-layered nanostructure of claim 1 , wherein at least one of the shells comprises ZnS claim 1 , at least one of the shells comprises ZnSe claim 1 , and the thickness of at least two of the shells is between 0.7 nm and 3.5 nm.9. The method of claim 8 , wherein the nanocrystal core is a InP nanocrystal.10. The method of claim 8 , wherein at least one shell precursor is a zinc source.11. The method of claim 10 , wherein the zinc source is selected from the group consisting of zinc oleate claim 10 , zinc hexanoate claim 10 , zinc octanoate claim 10 , zinc laurate claim 10 , zinc palmitate claim 10 , zinc stearate claim 10 , zinc ...

WEAK TARGET DETECTION METHOD, MICROWAVE RADAR SENSOR, AND UNMANNED AERIAL VEHICLE

A weak target detection method includes transmitting a plurality of frequency modulated continuous wave signals during rotation of a microwave radar sensor, receiving a plurality of echo signals reflected by a weak target, accumulating the plurality of echo signals in a beam width of the microwave radar sensor to obtain an accumulated echo signal, and determining position information of the weak target according to the accumulated echo signal.

FLIGHT CONTROL METHOD FOR AGRICULTURAL UNMANNED AERIAL VEHICLE, RADAR SYSTEM, AND AGRICULTURAL UNMANNED AERIAL VEHICLE

A flight control method of an agricultural unmanned aerial vehicle (UAV) includes controlling a rotation device to rotate continuously to drive a radar detection device to rotate continuously, obtaining detection information at a plurality of rotation directions during continuous rotation of the radar detection device, and controlling take-off and landing of the agricultural UAV according to the detection information. 1. A flight control method of an agricultural unmanned aerial vehicle (UAV) comprising:controlling a rotation device to rotate continuously to drive a radar detection device to rotate continuously;obtaining detection information at a plurality of rotation directions during continuous rotation of the radar detection device; andcontrolling take-off or landing of the agricultural UAV according to the detection information.2. The method of claim 1 , wherein the detection information includes at least one of a distance claim 1 , a velocity claim 1 , a direction claim 1 , or a height of the agricultural UAV relative to a target object claim 1 , a velocity of the agricultural UAV relative to ground claim 1 , a height from the agricultural UAV to the ground claim 1 , or a ground flatness.3. The method of claim 2 , wherein controlling the take-off or landing of the agricultural UAV according to the detection information includes controlling the agricultural UAV to take off automatically and ascend to a preset height for operation according to the detection information.4. The method of claim 2 , wherein controlling the take-off or landing of the agricultural UAV according to the detection information includes controlling the agricultural UAV to land automatically according to the detection information.5. The method of claim 4 , wherein controlling the agricultural UAV to land automatically according to the detection information includes:determining whether the ground flatness reaches a preset value;in response to the ground flatness reaching the preset value, ...

Split-Gate, Twin-Bit Non-volatile Memory Cell

A memory device that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a continuous channel region in the substrate extending between the first and second regions. A first floating gate is disposed over and insulated from a first portion of the channel region adjacent to the first region. A second floating gate is disposed over and insulated from a second portion of the channel region adjacent to the second region. A word line gate is disposed over and insulated from a third portion of the channel region between the first and second channel region portions. A first erase gate disposed over and insulated from the first region. A second erase gate disposed is over and insulated from the second region.

InP Quantum Dots with GaP and AlP Shells and Methods of Producing the Same

Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures. 1. A nanostructure comprising an InP core and a first GaP or AlP shell.2. The nanostructure of claim 1 , comprising an alloy between the InP and the first GaP or AlP shell.3. The nanostructure of claim 1 , further comprising a second shell surrounding the first GaP or AlP shell.4. The nanostructure of claim 3 , wherein the second shell is selected from the group consisting of CdS claim 3 , CdSe claim 3 , CdO claim 3 , CdTe claim 3 , ZnS claim 3 , ZnO claim 3 , ZnSe claim 3 , ZnTe claim 3 , MgTe claim 3 , GaAs claim 3 , GaSb claim 3 , GaN claim 3 , HgO claim 3 , HgS claim 3 , HgSe claim 3 , HgTe claim 3 , InAs claim 3 , InSb claim 3 , InN claim 3 , AlAs claim 3 , AlN claim 3 , AlSb claim 3 , AlS claim 3 , PbS claim 3 , PbO claim 3 , PbSe claim 3 , PbTe claim 3 , MgO claim 3 , MgS claim 3 , MgSe claim 3 , MgTe claim 3 , CuCl claim 3 , Ge claim 3 , Si and alloys thereof.5. The nanostructure of which comprises an InP core surrounded by a first GaP shell and further surrounded by a ZnS shell.6. The nanostructure of which comprises an InP core surrounded by a first AlP shell and further surrounded by a ZnS shell.722.-. (canceled)23. A film comprising a matrix and a population of nanostructures of .2429.-. (canceled) The invention is in the field of nanotechnology. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures. ...

Reduced Size Split Gate Non-volatile Flash Memory Cell And Method Of Making Same

A reduced size non-volatile memory cell array is achieved by forming first trenches in an insulation layer in the row direction, filling the first trenches with insulation material, forming second trenches in the insulation layer in the column direction, forming the STI isolation material in the second trenches, and forming the source regions through the first trenches. Alternately, the STI isolation regions can be made continuous, and the source diffusion implant has sufficient energy to form continuous source line diffusions that each extend across the active regions and under the STI isolation regions. This allows control gates of adjacent memory cell pairs to be formed closer together. 1. A non-volatile memory cell array comprising:a semiconductor substrate having a plurality of parallel, continuous isolation regions each extending in a first direction, with an active region between each adjacent pair of the isolation regions, wherein each isolation region includes a trench formed into a surface of the substrate and insulation material disposed in the trench;a plurality of parallel, continuous source line diffusions in the substrate each extending in a second direction orthogonal to the first direction, wherein each source line diffusion extends across each of the active regions and under the insulation material in each of the isolation regions; a source region in the substrate which is a portion of one of the continuous source line diffusions,', 'first and second drain regions in the substrate, wherein a first channel region extends between the first drain region and the source region and a second channel region extends between the second drain region and the source region,', 'a first floating gate disposed over and insulated from a first portion of the first channel region,', 'a second floating gate disposed over and insulated from a first portion of the second channel region,', 'a first select gate disposed over and insulated from a second portion of the ...

Method Of Making Split Gate Non-volatile Flash Memory Cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in both regions, forming an oxide layer over the polysilicon layer in the logic circuit region, performing a chemical-mechanical polish of the polysilicon layer in the memory cell area leaving a first block of the polysilicon layer between the floating gates that is separated from remaining portions of the polysilicon layer, and selectively etching portions of the polysilicon layer to result in: second and third blocks of the polysilicon layer disposed in outer regions of the memory cell area, and a fourth block of the polysilicon layer in the logic circuit region. 1. A method of forming a non-volatile memory cell comprising:providing a semiconductor substrate having a memory cell region and a logic circuit region;forming a pair of conductive floating gates disposed over and insulated from the memory cell region of the substrate;forming a first source region in the substrate between the pair of floating gates;forming a polysilicon layer over and insulated from the substrate in the memory cell region and the logic circuit region, wherein the polysilicon layer extends up and over, and is insulated from, the pair of conductive floating gates;forming an oxide layer over the polysilicon layer in the memory cell and logic circuit regions;removing the oxide layer from the memory cell region;performing a chemical-mechanical polish of the polysilicon layer in the memory cell area such that a first block of the polysilicon layer between the floating gates and over the first source region is separated from remaining portions of the polysilicon layer;removing the oxide layer from the logic circuit region; a second block of the polysilicon layer disposed over the substrate with one of the ...

METHODS FOR SYNTHESIS OF INORGANIC NANOSTRUCTURES USING MOLTEN SALT CHEMISTRY

The invention relates to highly luminescent nanostructures with strong blue light absorbance, particularly core/shell nanostructures comprising an InGaP core and ZnSe and/or ZnS shell layers, wherein 0 Подробнее

METHODS TO IMPROVE THE QUANTUM YIELD OF INDIUM PHOSPHIDE QUANTUM DOTS

This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided. 1. A nanostructure comprising a core comprising indium phosphide and at least two shells , wherein at least one of the shells comprises zinc , wherein the nanostructure displays a photoluminescence quantum yield between about 90% and about 100% , and a wherein the nanostructure has a full width at half-maximum of less than 45 nm.26-. (canceled)7. The nanostructure of claim 1 , wherein at least one shell comprises ZnSe and at least one shell comprises ZnS.8. The nanostructure of claim 1 , wherein the nanostructure exhibits a photoluminescence quantum yield of between about 94% and about 100%.9. The nanostructure of claim 1 , wherein the nanostructure exhibits a photoluminescence quantum yield of between about 96% and about 100%.10. The nanostructure of claim 1 , wherein the nanostructure exhibits a full width at half-maximum of between about 10 nm and about 40 nm.1113-. (canceled)14. A nanostructure composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(a) the nanostructure of ; and'}(b) at least one organic resin.16. The method of claim 15 , wherein the admixing in (a) claim 15 , (c) or (f) further comprises at least one metal halide.1723-. (canceled)24. The nanostructure of claim 15 , wherein at least one shell comprises ZnSe and at least one shell comprises ZnS.2528-. (canceled)29. The method of claim 15 , wherein the organic acid is oleic acid.30. (canceled)31. The method of claim 16 , wherein the at least one metal halide admixed in (a) is ZnCl.32. (canceled)33. The method of claim 16 , ...

THIOLATED HYDROPHILIC LIGANDS FOR IMPROVED QUANTUM DOT RELIABILITY IN RESIN FILMS

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures. 1. A composition comprising:(a) a nanostructure; and(b) thiolated ligands bound to the surface of the nanostructure, wherein the thiolated ligands comprise a poly(ethylene oxide)/poly(propylene oxide) block copolymer, a poly(ethylene oxide) block copolymer, or a poly(propylene oxide) block copolymer.3. (canceled)4. The composition of claim 1 , wherein the nanostructure comprises a core selected from the group consisting of InP claim 1 , InZnP claim 1 , InGaP claim 1 , CdSe claim 1 , CdS claim 1 , CdSSe claim 1 , CdZnSe claim 1 , CdZnS claim 1 , ZnSe claim 1 , ZnSSe claim 1 , InAs claim 1 , InGaAs claim 1 , and InAsP.5. The composition of claim 1 , wherein the nanostructure comprises a core of InP.67.-. (canceled)8. The composition of claim 1 , wherein the nanostructure comprises at least one shell and the at least one shell comprises a mixture of at least two materials selected from the group consisting of zinc claim 1 , sulfur claim 1 , selenium claim 1 , tellurium claim 1 , and cadmium.9. (canceled)10. The composition of claim 2 , wherein x is 10 to 20.11. The composition of claim 2 , wherein y is 1 to 10.12. The composition of claim 2 , wherein Ris Calkyl.13. The composition of claim 2 , wherein Ris —CHCH—.14. The composition of claim 2 , wherein the nanostructure in (a) comprises an InP core and two shells claim 2 , and wherein in formula (I) x is 19 claim 2 , y is 3 claim 2 , Ris CH claim 2 , and Ris —CHCH—.15. A nanostructure composition claim 2 , comprising:(a) at least one ...

BRIGHT SILVER BASED QUATERNARY NANOSTRUCTURES

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures. 1. Nanostructures comprising Ag , In , Ga , and S (AIGS) and a shell comprising Ag , Ga and S (AGS) , wherein the nanostructures have a peak emission wavelength (PWL) in the range of 480-545 nm and wherein at least about 80% of the emission is band-edge emission , and wherein the nanostructures exhibit a quantum yield (QY) of 80-99.9%.2. The nanostructures of claim 1 , wherein the nanostructures have an emission spectrum with a FWHM of less than 40 nm.3. The nanostructures of claim 2 , wherein the nanostructures have an emission spectrum with a FWHM of 36-38 nm.4. The nanostructures of claim 1 , wherein the nanostructures have a QY of 82-96%.5. The nanostructures of claim 4 , wherein the nanostructures have a QY of 85-95%.6. The nanostructures of claim 4 , wherein the nanostructures have a QY of 86-94%.7. The nanostructures of claim 1 , wherein the nanostructures have an OD450/mass (mL·mg·cm) greater than or equal to 0.8.8. The nanostructures of claim 7 , wherein the nanostructures have an OD450/mass (mL·mg·cm) in the inclusive range 0.8-2.5.9. The nanostructures of claim 8 , wherein the nanostructures have an OD450/mass (mL·mg·cm) in the inclusive range 0.87-1.9.10. The nanostructures of claim 1 , wherein the average diameter of the nanostructures is less than 10 nm by TEM.11. The nanostructures of claim 10 , wherein the average diameter is about 5 nm.12. The nanostructures of claim 1 , wherein at least about 80% of the emission is band-edge emission.13. The nanostructures of claim 1 , wherein at least about 90% of the emission is band-edge emission.14. The nanostructures of claim 13 , wherein 92-98% of the emission is band-edge emission.15. The nanostructures of claim 13 , ...

METHOD OF FORMING PAIRS OF THREE-GATE NON-VOLATILE FLASH MEMORY CELLS USING TWO POLYSILICON DEPOSITION STEPS

A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. A pair of spaced apart insulation blocks are formed on the first polysilicon layer. Exposed portions of the first poly silicon layer are removed while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation blocks. A second polysilicon layer is formed over the substrate and the pair of insulation blocks in a second polysilicon deposition process. Portions of the second polysilicon layer are removed while maintaining a first polysilicon block (disposed between the pair of insulation blocks), a second polysilicon block (disposed adjacent an outer side of one insulation block), and a third polysilicon block (disposed adjacent an outer side of the other insulation block). 1. A method of forming a pair of non-volatile memory cells comprising:forming a first insulation layer on a semiconductor substrate;forming a first polysilicon layer on the first insulation layer in a first polysilicon deposition process;forming a pair of spaced apart insulation blocks on the first polysilicon layer, each of the insulation blocks having first sides facing toward each other and second sides facing away from each other;forming insulation spacers adjacent the first and second sides;reducing a width of the insulation spacers adjacent the first sides;removing portions of the first polysilicon layer while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation blocks and the insulation spacers adjacent the first and second sides of the one insulation block;forming a source region in the substrate and between the pair of insulation blocks;removing the insulation spacers to expose end portions of each of the pair of polysilicon blocks of ...

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component, This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Catalyst for the production of olefin polymers

A catalyst composition for the polymerization of olefins is provided which comprises a catalyst compound and a co-catalyst or a support material or both a co-catalyst and a support material, wherein the catalyst compound comprises a transition metal of Group 4, 5 or 6, an organic compound containing at least one lone pair of electrons, a divalent radical and a Lewis basic group having the following formula: —C(R 7 )=Z 1 R 8 ,  (i) wherein R 7 and R 8 are each independently selected from the group consisting of hydrogen and C 1 -C 8 hydrocarbyl groups, and wherein R 7 and R 8 are not linked or are linked to form a saturated or unsaturated ring; and Z 1 is a nitrogen atom or a phosphorus atom, which bonds to M; or  wherein: Z 2 is an oxygen atom, a sulphur atom or a selenium atom, which bonds to the transition metal compound; and R 9 , R 10 and R 11 are each independently selected from the group consisting of hydrogen and C 1 -C 8 hydrocarbyl groups, wherein no pair or one pair of substituents selected from R 9 , R 10 and R 11 are linked to form a saturated or unsaturated ring.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Catalyst compositions and processes for olefin polymers and copolymers

The present invention is directed to processes of polymerization of olefins and copolymerization of olefins and functionalized olefins in the presence of certain late transition metal bidentate salicylaldimine chelates represented by the formula: wherein each of the symbols R, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , L, M, A, X and z are defined within the specification herein below.

Catalyst compositions and processes for olefin oligomerization and polymerization

The present invention is directed to processes of polymerizing olefin monomers and copolymerizing olefin monomer(s) with functionalized alpha-olefin monomers in the presence of certain late transition metal pyrrolaldimine chelates, especially bidenate or in the presence of a combination of a transition metal in its zero valence and a pyrrolaldimine represented by the formula: wherein each R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , M and L are defined in the specification herein below.

Linear vinylene carbonate/1-olefin copolymer and articles formed therefrom

Substantially linear vinylene carbonate/1-olefin copolymers, a process of forming the same, and packaging materials incorporating the same are described. These copolymers are formed by reacting the component monomers in the presence of a single component, non-ionic polymerization catalyst at relatively low temperatures and pressures.

Polyethylene resine

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Catalyst for the production of olefin polymers

A catalyst composition for the polymerization of olefins is provided, comprising a cyclopentadienyl transition metal catalyst precursor and an activating co-catalyst.

Catalyst for the production of olefin polymers

A catalyst composition for the polymerization of olefins is provided, comprising a cyclopentadienyl transition metal catalyst precursor and an activating co-catalyst.

Catalyst compositions and processes for olefin polymers and copolymers

The present invention is directed to certain novel late transition metal salicylaldimine chelates and, further, to novel bidentate ligand compounds of substituted salicylaldimine, and their utility as polymerization catalysts alone or in combination with adjunct agent and/or Lewis base in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized olefin monomers.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Catalyst compositions and processes for olefin oligomerization and polymerization

The present invention is directed to certain novel late transition metal pyrrolaldimine chelates and, further, to novel bidentate ligand compounds of substituted pyrrolaldimine, and their utility as polymerization catalysts in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized alpha-olefin monomers.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

BIMETAL CATALYST TO PRODUCE POLYETHYLENE RESINS WITH A BIMODAL MOLECULAR WEIGHT DISTRIBUTION, ITS PREPARATION AND USE.

Un procedimiento para fabricar un catalizador bimetálico soportado apropiado para su uso en la producción de homopolímeros y copolímeros de etileno con una distribución de peso molecular bimodal en un solo reactor, comprendiendo el procedimiento: (A) poner en contacto un material de soporte con un componente de organomagnesio; (B) poner en contacto el producto de (A) con un componente que contiene carbonilo; (C) poner en contacto el producto de (B) con un componente de metal de transición no metaloceno para obtener un intermedio de catalizador; y (D) poner en contacto el intermedio de catalizador con por lo menos un componente de aluminoxano y un componente de metaloceno. A process for manufacturing a supported bimetallic catalyst suitable for use in the production of homopolymers and copolymers of ethylene with a bimodal molecular weight distribution in a single reactor, the method comprising: (A) contacting a support material with a component of organomagnesium; (B) contacting the product of (A) with a component containing carbonyl; (C) contacting the product of (B) with a non-metallocene transition metal component to obtain a catalyst intermediate; and (D) contacting the catalyst intermediate with at least one aluminoxane component and a metallocene component.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component, This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Polyethylene resins

The invention provides ethylene/α-olefin copolymers exhibiting improved environmental stress cracking resistance properties, and methods for the production of the copolymers in a single reactor by means of a bimetallic catalyst including a Ziegler component and a metallocene component.

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Catalyst compositions and processes for olefin oligomerization and polymerization

The present invention is directed to certain novel late transition metal pyrrolaldimine chelates and, further, to novel bidentate ligand compounds of substituted pyrrolaldimine, and their utility as polymerization catalysts in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized alpha-olefin monomers.

Catalyst compositions and processes for olefin polymers and copolymers

The present invention is directed to certain novel late transition metal salicylaldimine chelates and, further, to novel bidentate ligand compounds of substituted salicylaldimine, and their utility as polymerization catalysts alone or in combination with adjunct agent and/or Lewis base in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized olefin monomers.

Catalyst compositions and processes for olefin polymers and copolymers

The present invention is directed to certain novel late transition metal salicylaldimine chelates and, further, to novel bidentate ligand compounds of substituted salicylaldimine, and their utility as polymerization catalysts alone or in combination with adjunct agent and/or Lewis base in processes of polymerizing olefin monomers and copolymerizing olefin monomers with functionalized olefin monomers.

BIMETAL CATALYST FOR ETHYLENE POLYMERIZATION WITH BIMODAL MOLECULAR WEIGHT DISTRIBUTION, ITS MANUFACTURE AND USE

Bimetallic catalyst for producing polyethylene resins with bimodal molecular weight distribution, its preparation and use

Bimetallic catalyst for producing polyethylene resins with a bimodal molecular weight distribution, its preparation and use. The catalyst is obtainable by a process which includes contacting a support material with an organomagnesium component and carbonyl-containing component. The support material so treated is contacted with a non-metallocene transition metal component to obtain a catalyst intermediate, the latter being contacted with an aluminoxane component and a metallocene component. This catalyst may be further activated with, e.g., alkylaluminum cocatalyst, and contacted, under polymerization conditions, with ethylene and optionally one or more comonomers, to produce ethylene homo- or copolymers with a bimodal molecular weight distribution and improved resin swell properties in a single reactor. These ethylene polymers are particularly suitable for blow molding applications.

Catalyst for the production of olefin polymers