Устройство для переключения мемристора

Изобретение относится к технологии эксплуатации мемристора с диэлектрической структурой, расположенной между его двумя электродами, обладающей резистивной памятью и обеспечивающей филаментарный механизм переключения мемристора, и может быть использовано для стабильного переключения такого мемристора за счет автоматической подстройки формы и длительности импульсов напряжения, переключающих мемристор в высокоомное или низкоомное состояние. Предлагается устройство для переключения мемристора, содержащее два источника постоянного напряжения, с противоположной друг к другу полярностью, два реостата, два резистивных делителя и два дифференциальных усилителя напряжения, образующие по одному две группы элементов для переключения мемристора в высокоомное или низкоомное состояние. Причем в каждой указанной группе реостат соединен своим входом с источником постоянного напряжения, своим выходом с первым электродом мемристора и управляющим входом с выходом дифференциального усилителя напряжения, а резистивный ...

Активный слой мемристора

Изобретение относится к технике накопления информации, к вычислительной технике, в частности к элементам резистивной памяти, и может быть использовано при создании устройств памяти, например, вычислительных машин, микропроцессоров электронных паспортов, электронных карточек. Активный слой мемристора содержит частицы фторографена и частицы кристаллогидрата оксида ванадия VO⋅nHO с n≤3. Фторографен фторирован до степени 30% или более. Латеральный размер частиц фторографена составляет от 20 до 100 нм, толщина частиц от 1 монослоя до 2 нм. Диаметр частиц кристаллогидрата оксида ванадия - от 5 до 20 нм. Частицы кристаллогидрата оксида ванадия капсулированы частицами фторографена. Соотношение содержания фторографена к содержанию кристаллогидрата оксида ванадия взято от 0,5 до 0,7 масс. %. Активный слой выполнен толщиной от 40 до 70 нм. Активный слой по изобретению обеспечивает повышение отношения величин токов в открытом и закрытом состояниях (I/I), повышение стабильности переключений без изменений ...

УСИЛИТЕЛЬ СВЧ МАГНИТОЭЛЕКТРИЧЕСКИЙ

Изобретение относится к области электроники. Усилитель СВЧ магнитоэлектрический согласно изобретению содержит микрополосковую диэлектрическую подложку с установленным на ней элементом преобразования энергии, в котором для усиления СВЧ сигнала в конструкции микрополоскового резонатора расположен магнитоэлектрический планарный элемент, работающий в области магнитоакустического резонанса, установленный в микрополосковую подложку и расположенный под микрополосковым резонатором с размером 1/2 длины волны усиливаемого сигнала и с двумя шлейфами 1/8 и 3/8 длины волны усиливаемого сигнала, соединенный с одной стороны через полосно-пропускающий фильтр частоты накачки с входом генератора накачки, а с другой стороны через полосно-пропускающий фильтр частоты усиливаемого сигнала и циркулятор - со входом и выходом СВЧ сигнала, постоянный магнит расположен около магнитоэлектрического элемента. Изобретение обеспечивает возможность усиления СВЧ сигналов наиболее простым и дешевым способом, а также уменьшить ...

НАНОСТРУКТУРА НА ОСНОВЕ ТРЕХКОМПОНЕНТНЫХ ОКСИДОВ

... 1. Наноструктура на основе трехкомпонентных оксидов, состоящая из трех чередующихся слоев, а именно активного слоя, расположенного между двумя токопроводящими слоями, причем активным слоем является трехкомпонентный оксид, одним из компонентов которого является титан, или цирконий, или гафний, вторым компонентом является металл, третьим компонентом является кислород, отличающаяся тем, что металл является трехвалентным, с ионным радиусом, близким по величине к ионному радиусу титана, или циркония, или гафния соответственно.2. Наноструктура по п.1, отличающаяся тем, что, если одним из компонентов является титан, то вторым компонентом является алюминий или скандий, если одним из компонентов является цирконий или гафний, то вторым компонентом является скандий, или иттрии, или лютеций.

ПОЛУПРОВОДНИКОВЫЙ МАТЕРИАЛ ДЛЯ ПЕРЕКЛЮЧАЮЩИХ ЭЛЕМЕНТОВ И КРИТИЧЕСКИХ ТЕРМОРЕЗИСТОРОВ

Управляемый магнитным полем пороговый переключатель

Kohlenstoff enthaltende Zwischenschicht für einen Phasenübergangsspeicher

Tunneldiode und Speicheranordnung mit derselben

ELEKTRISCH PROGRAMMIERBARES SPEICHERELEMENT MIT VERBESSERTEN KONTAKTEN

Obere Elektrodensperrschicht für RRAM

Verschiedene Ausführungsformen der vorliegenden Anmeldung richten sich an eine resistive Direktzugriffsspeicherzelle (RRAM-Zelle), die eine obere Elektrodensperrschicht aufweist, welche zum Blockieren der Bewegung von Stickstoff oder einem anderen geeigneten nichtmetallischen Element von einer oberen Elektrode der RRAM-Zelle zu einer aktiven Metallschicht der RRAM-Zelle konfiguriert ist. Blockieren der Bewegung des nichtmetallischen Elements kann die Ausbildung einer unerwünschten Schaltschicht zwischen der aktiven Metallschicht und der oberen Elektrode verhindern. Die unerwünschte Schaltschicht würde parasitären Widerstand der RRAM-Zelle erhöhen, sodass die obere Elektrodensperrschicht parasitären Widerstand durch Verhindern der Ausbildung der unerwünschten Schaltschicht verhindern kann.

Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle

Chalcogenid-Film und Verfahren zu dessen Herstellung

Memristive Einheit auf Grundlage einer Alkali-Dotierung von Übergangsmetalloxiden

Eine memristive Einheit beinhaltet eine erste leitfähige Materialschicht. Eine Oxidmaterialschicht ist auf der ersten leitfähigen Schicht angeordnet. Eine zweite leitfähige Materialschicht ist auf der Oxidmaterialschicht angeordnet, wobei die zweite leitfähige Schicht eine Metall-Alkali-Legierung aufweist.

Glaszusammensetzung

Verfahren zum Herstellen eines Festkörperelektrolytmaterialbereichs

Verfahren zum Herstellen eines Festkörperelektrolytmaterialbereichs (16) für ein Speicherelement (10) einer Festkörperelektrolytspeicherzelle (1), – bei welchem der Festkörperelektrolytmaterialbereich (16) aus oder mit einem Chalcogenidmaterial (16') ausgebildet wird, – bei welchem zunächst mindestens ein erster Materialbereich (16'') aus mindestens einem dem Chalcogenidmaterial (16') zugrunde liegenden ersten Material (16-1) in im Wesentlichen reiner Form ausgebildet wird, und zwar aus der Gruppe von Materialien, die gebildet wird von Ge und Si, – bei welchem dann an der so erhaltenen Struktur ein thermischer Behandlungsschritt unter Anwesenheit mindestens eines zweiten dem Chalcogenidmaterial (16') zugrunde liegenden Materials (16-2) durchgeführt wird, und – bei welchem dadurch das Chalcogenidmaterial (16') des Festkörperelektrolytmaterialbereichs (16) erzeugt wird, und zwar mit oder aus einer Verbindung aus der Gruppe, die gebildet wird von GeSex, GeSx, SiSex und SiSx, – wobei das mindestens ...

VERFAHREN ZUR HERSTELLUNG EINES ELEKTRONISCHEN SCHALT- UND SPEICHERELEMENTS

Mikroelektronisches Bauelement

GLASARTIGES, PHOTOLEITENDES MATERIAL

GLEICHRICHTERDIODE

Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung

Halbleiterelement

VERTIKALE PHASENWECHSEL-SPEICHERZELLE UND HERSTELLUNGSVERFAHREN DAFÜR

Stromsteuervorrichtung

Verfahren zum Hertstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung

Non-volatile memory with adjustable cell bit shape

METHOD OF FORMING GLASS LAYERS

... 1342544 Depositing a chalcogenide glass STANDARD TELEPHONES & CABLES Ltd 28 Oct 1971 50082/71 Heading C1M A method of depositing on a substrate, such as silicon, a layer of a glass which contains selenium, tellurium and/or sulphur on a substrate in which a plasma is established by means of an applied electric field adjacent said surface in an atmosphere containing a mixture of compounds each including an element of the layer. Preferably the compounds are the hydroxides of each element. The atmosphere may additionally include a doping element and is maintained at a pressure below atmospheric. The electric field is applied by an alternating voltage preferably of radio frequency. Deposition may be controlled by a magnetic field to give even cover or concentrated in particular areas. Specific glasses described are Te 48 As 30 Ge 10 Si 12 ; Te 33 As 27 Ge 20 Si 20 and As 5 Se 6 Te 3 .

FUNCTIONAL ELEMENTS

... 1459460 Solid state devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 19 Dec 1973 [20 Dec 1972 12 Feb 1973 (2)] 58956/73 Heading H1K A material suitable for use in devices sensitive to such factors as magnetism, light, pressure and temperature comprises an organic material of the type possessing "domains" within which charge carriers are mobile but between which they cannot be transferred, and dispersed within the material discrete atoms or molecules of an inorganic substance which may be a metal, semiconductor, dielectric or magnetic material. A particular example is Sb dispersed in polypropylene, other suitable organic materials being polyethylene, polystyrene, polyester, polyvinylidene fluoride and dyes. The dispersion is preferably effected by evaporating the inorganic substance in the presence of the molten organic material.

SEMICONDUCTOR DEVICE

... 1280943 Semi-conductor devices LICENTIA PATENT-VERWALTUNGS GmbH 25 Sept 1970 [27 Sept 1969] 45768/70 Heading H1K A semi-conductor device comprises a monocrystalline semi-conductor body with at least two regions of differing conductivity type, and a passivation layer on its surface, the layer being capable of assuming two different resistivity states. The layer may be of vitreous material, the states being of high resistivity, and low resistivity, both of which states are stable. In an embodiment a silicon body 17, including diffused regions 12, 13, is used to form a transistor, the surface being covered by vapour deposition or cathodic sputtering with a vitreous layer 5 of silicon dioxide, boron trioxide, or phosphorus pentoxide and oxides of copper or tungsten. The layer as formed is in its high resistivity state and is a few microns thick. Contacts are made to the layer over the desied regions of the body, and each junction forwardly biased by voltages at the contacts. When the voltage ...

AVALANCHE DIODES

... 1319796 Semi-conductor devices WESTERN ELECTRIC CO Inc 4 Dec 1970 [10 Dec 1969] 57663/70 Heading H1K An avalanche diode includes in succession a rectifying junction, a high conductivity avalanche region and a low conductivity transit region, so that at avalanche breakdown a concentration of avalanche region majority carriers travels through the transit region, the material on the other side of the junction being such that no accumulation of avalanche region majority carriers can occur there. The device may comprise a P + contact region 24, a P region 25 adjacent the junction, an N avalanche region 26, an intrinsic transit region 27 and an N+ contact region 28. Because of the low conductivity of region 25 an electric field exists therethrough, and prevents the accumulation of avalanche region majority carriers therein. Region 25 is preferably thicker than the diffu- sion lengths of said majority carriers. The carriers diffuse across the junction and in the prior art returned following avalanching ...

THRESHOLS SWITCH

... 1411604 Glass compositions for glass-metal seals STANDARD TELEPHONES & CABLES Ltd 6 Dec 1973 [14 Dec 1972] 57671/72 Heading C1M [Also in Division H1] The subject-matter of this Specification is substantially the same as that of Specification 1,361,487, but titanium dioxide is used instead of cupric oxide as a constituent of the glass.

Bit-erasing architecture for seek-scan probe (SSP) memory storage

METHOD AND APPARATUS FOR RECORDING AND RETRIEVING INFORMATION

... 1364288 Data store ENERGY CONVERSION DEVICES Inc 4 Aug 1971 [13 Aug 1970] 36578/71 Heading G4C [Also in Divisions H1 and B6] An Ovonic record of retrievable data is made using a layer of material having two structural conditions, a detectable characteristic whose value is different in the two conditions, and internal biasing forces towards one structural condition and internal inhibitions against the action of the biasing forces, and a catalyst which is capable of changing the biasing forces and/or the inhibitions against those forces by actuating the catalyst in desired regions of the material in order to change the structural condition of those portions thereby to record the data. The memory material is such as to exhibit the ovshinsky effect by being reversibly changeable between a generally disordered amorphous state and a more ordered crystalline state by the application of energy, the two states exhibiting widely different values of at least one physical characteristic, e.g. electrical ...

Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer, and methods of fabricating the same

A cross-point non-volatile memory device using a binary metal oxide layer as a data storage material layer includes spaced apart doped lines 106 disposed in a substrate. Spaced apart upper electrodes 116 cross over the doped lines such that cross points C are formed where the upper electrodes overlap the doped lines. Lower electrodes 110' are disposed at the cross points between the doped lines and the upper electrodes. A binary metal oxide layer 114 is provided between the upper electrodes and the lower electrodes as a data storage material layer. The binary metal oxide layer may comprise a transition metal oxide or aluminium oxide. Doped regions 108' are provided between the lower electrodes and the doped lines and have an opposite conductivity type to the doped lines in order to form diodes together with the doped lines to reduce crosstalk between adjacent memory cells caused by leakage currents.

Integration of confined phase change memory with threshold switching material

Matrix liquid crystal display device and method of manufacturing the same.

An active matrix liquid crystal display device wherein individual display elements are controlled by non-linear devices and methods of fabricating the display devices are provided. The non-linear devices are metal-insulator-metal structures (MIM). Two MIM elements are coupled in parallel to each other and connected to each display element in series. The MIM element includes a metallic thin film of Ta or nitrogen doped Ta and an oxide film formed by anodizing the metallic thin film and a second metallic thin film. The liquid crystal display matrix is formed by depositing a lower metallic thin film on a transparent substrate, selectively removing the first film, anodizing the surface of the first metallic thin film, depositing a pattern of an upper metallic thin film and selectively removing both the lower metallic thin film and the anodized oxide film at the regions other than where the MIM elements are being formed. The upper metallic thin film is selectively patterned to form an electrode ...

Memristive device based on reversible intercalated ion transfer between two meta-stable phases

Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

PROGRAMMABLE CELLS AND ARRAYS

Semi-conductor element

... 1,108,274. Semi-conductor devices. DANFOSS A/S. 3 March. 1966 [3 March, 1965|. No. 9387/66..Heading H1K. ' A semi-conductor device having high and low resistance states comprises a semi-conductor body without barrier layers and having a negative temperature coefficient of resistance in the high resistivity state in, which the leakage current is uniformly distributed, and such that a localized drop in resistance is concentrated in a narrow channel whose cross-sectional area increases with increased current. As shown. Fig. 5, a semi-conductor element 9, having a resistance-temperature characteristic of the shape illustrated in Fig. 4 (not shown), is mounted on an electrode 8 and provided with a strip-shaped electrode 10 one end 11 of which extends below the surface of element 9 to define an initiating point. At high currents the conduction channel spreads along a curved path beneath electrode 10. . The semi-conductor material may be an alloy e.g. As-S-Se, As-P-Se, Zn-As-Si, Zn-As-Ge, Cd-As-Si ...

Bistable semiconductive glass composition

... 1,141,230. Semi-conducting glass; glassmetal seals. ITT INDUSTRIES Inc. 15 Dec., 1967 [20 Dec., 1966], No. 57101/67. Heading C1M, [Also in Divisions C7, H1 and H3] A semi-conducting glass consists of Tl, Te and Ge and has a composition within the shaded area A in Fig. 1. A bi-stable solid state switching device is made from a body of the glass by applying thereto two spaced metallic contacts (e.g. of nickel, iron or tungsten). A circuit using a switching device according to the invention is described (see Division H3).

Programmable current for correlated electron switch

IMPROVEMENTS IN OR RELATING TO PULSE GENERATING DEVICES

... 1,243,385. Electroluminescence. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 20 Sept., 1968 [22 Sept., 1967; 3 Oct., 1967(3)], No. 44947/68. Heading C4S. [Also in Divisions G4, H1 and H3-H5] A pulse generator consists of a load impedance Z L , Pig. 1, a centre-tapped variable supply voltage E, and two impedance elements ZA, Z B , each having a characteristic (Fig. 2, not shown), which exhibits an abrupt change in current flow through the element at a predetermined threshold voltage applied across it, the threshold voltages for the two elements ZA, ZB being different. In operation, as the voltage supply is increased one of the elements ZA switches to its high current condition, causing a current to flow in the load Z L . The consequent voltage across the load Z L increases the voltage across Z B so that this element also switches to its high current state, and as the common connection of ZA, Z B is now approximately back at the potential of the centre tap of E, the load current in Z L stops.

SOLID STATE ELECTRONIC DEVICE AND CIRCUIT THEREFOR

... 1469814 Semi-conductor glasses ENERGY CONVERSION DEVICES Inc 26 March 1974 [26 April 1973] 13348/74 Heading CIM [Also in Division H1] A semi-conductor switching material is formed from vitreous semi-conductors found among the three-dimensionally cross-linked chalcogenide alloy glasses. Glasses specified are (in atomic %) (a) 25 As, 67À5 Te, 7À5 Ge; (b) 40 Te, 35 As, 18 Si, 6À75 Ge, 0À25 In; (c) 28 Te, 34À5 As, 15À5 Ge, 22 S; (d) 15 Ge, 81 Te, 2 Sb, 2S; and (e) 83 Te, 17 Ge.

Improvements in or relating to solid state electronic devices, method and apparatus

... 1,044,362. Solid state devices; cold cathodes. GENERAL ELECTRIC CO. March 20, 1963 [March 22, 1962], No. 10998/63. Headings H1D and H1K. A solid state electronic device with a negative resistance characteristic comprises an insulating film 80-1000 Š thick of a silicon or metal compound between two metal layers, the conductivity characteristic being produced by applying an increasing potential across the device in low atmospheric pressure conditions; an intermediate metal layer and second insulating layer may be provided to form a triode. The current through the device is believed to be space charge limited and only a small part is provided by tunnelling. The arrangement may be used to provide a cold cathode device. Fig. 1 shows a diode arrangement consisting of a glass substrate 11 with an aluminium layer 12 (2000 to 4000 A or thicker, e.g. 20 mils.) an aluminium oxide layer 14 (80 to 1000 Š) and a gold layer 13 (40 to 300 Š). The oxide layer may be produced by anodizing treatment of the ...

Phase-change memory (PCM) including liner reducing resistance drift

A Phase-Change Memory (PCM) device 102 comprising a dielectric layer 206, bottom electrode 204 in dielectric layer, a liner material 203 on bottom electrode, a phase-change material 202, 205 on the liner material and a top electrode 201 on the phase-change material and in the dielectric layer. The liner material and phase change material PCM may be in the dielectric layer. The liner material may comprise a conductive oxide thin film such as Al doped ZnO (AZO), doped indium oxide with tin (ITO) or doped metal oxide. Alternatively the liner material may comprise a metal layer formed of Aluminium Al only or Al disposed over a conductive oxide thin film (e.g Al doped ZnO (AZO)).The dielectric layer may comprise several dielectric layers. Electrodes may comprise of metal nitride (TaN, TiN, WN). A method of manufacture is included. Alternative phase-change memory includes first electrode and second on first and second side respectively of dielectric layer, the phase-change material on dielectric ...

PROGRAMMABLE MICROELECTRONIC STRUCTURE AS WELL AS PROCEDURE FOR YOUR PRODUCTION AND PROGRAMMING

ELECTRONIC FESTKORPERSCHALTELEMENT

DIELECTRIC ANTIFUSE FOR A ELECTRICALTHERMALLY PROGRAMMABLE DEVICE

MANUFACTURING PROCESS FOR A SMALL CONTACT RANGE BETWEEN ELECTRODES

MEMORY DEVICE AND CBRAM MEMORY WITH INCREASED RELIABILITY

REPRODUCIBLE RESISTANCE VARIABLE ISOLATION MEMORY ARRANGEMENTS AND MANUFACTURING PROCESS FOR IT

SINTERED DRAG ELEMENT

THIN FILM MEMORY MODULE WITH VARIABLE RESISTANCE

ELECTRONIC MATRIX AND PROCEDURE FOR THEIR PRODUCTION WITH SIMULTANEOUS OR ADDITIONAL PROGRAMMING.

INFORMATION RECORDING MEDIUM AND PROCEDURE FOR ITS PRODUCTION

ELECTRICAL MECHANISM WITH A PHASE CHANGE MATERIAL

Contactless electrical signaling devices

Procedure for the production of a voltage-controlled semiconductor switch

BILATERAL CONTROLLABLE ONE SEMICONDUCTOR SWITCH

Layer Halbmentallwiderstand with negative voltage characteristic

PHASE CHANGE MATERIAL MEMORY DEVICE

SEMICONDUCTOR DEVICE

ELECTRIC DEVICE COMPRISING PHASE CHANGE MATERIAL

Silver-selenide/chalcogenide glass stack for resistance variable memory

Manufacturing methods for resistance variable material cells

PHASE-CHANGE MEMORY DEVICE

ELECTRODE STRUCTURE FOR USE IN AN INTEGRATED CIRCUIT

THIN FILM FET

Programmable microelectronic devices and methods of forming and programming same

AN AMORPHOUS SILICON MATERIAL FABRICATED BY A MAGNETICALLY ALIGNED GLOW DISCHARGE

ELECTRIC-ELECTRONIC DEVICE INCLUDING POLYIMIDE THIN FILM

An electric-electronic device including a polyimide thin film is disclosed, said polyimide thin film having a thickness of not more than 1000 A and a dielectric breakdown strength of not less than 1 x 106 V/cm, and an electric-electronic device comprising a polyimide thin film and the group III-V or II-VI compound semconductor is also disclosed. The device has excellent properties ascribed to high heat resistance, mechanical strength, chemical resistance and insulating properties of the polyimide thin film.

CRYOGENIC TRANSISTOR WITH A SUPERCONDUCTING BASE AND A SEMICONDUCTOR-ISOLATED COLLECTOR

YO983-157 CRYOGENIC TRANSISTOR WITH A SUPERCONDUCTING BASE AND A SEMICONDUCTOR-ISOLATED COLLECTOR This invention relates generally to cryogenic amplifying-switching devices and more specifically relates to a cryogenic transistor with a superconducting base and a collector isolated from the base by a semiconductor element. Still more specifically the invention is directed to a three terminal, transistor-like device which incorporates three metal layers. The first and second of the three layers are separated by an insulating tunnel barrier and the second and third layers are separated by a semiconductor layer of a thickness sufficient to inhibit tunnelling. The semiconductor layer has a barrier height (low) which is sufficient to permit the passage of quasiparticles from the second layer while simultaneously inhibiting the passage of Cooper pairs. The second layer is a superconductor while the first and third layers may be superconductors or normal metals. The second and third layers are ...

SOLID STATE AMPLIFIER AND CIRCUIT THEREFOR

JUNCTION DEVICE EMPLOYING A GLASSY AMORPHOUS MATERIAL AS AN ACTIVE LAYER

ELECTRONIC MATRIX ARRAYS AND METHOD FOR MAKING THE SAME

METHOD OF MAKING N-TYPE AMORPHOUS SEMICONDUCTOR MATERIAL

AMORPHOUS SEMICONDUCTOR MEMBER AND METHOD OF MAKING SAME

THIN FILM TRANSISTOR

IMPROVED THIN-FILM STRUCTURE FOR CHALCOGENIDE ELECTRICAL SWITCHING DEVICES AND PROCESS THEREFOR

Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching device fabricated of chalcoge- nide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material (16) beneath the body of chalcogenide material (3) so as to carefully define the fila- ment location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eli- minated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of in- sulator material (2) which is deposited only after the chalcogenide material (3) has been formed. This improved structure demon- strates the advantages of higher fabrication yields and more repeatable electrical switching ...

ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROM

The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material (36) which defines the single cell memory element, a pair of spacedly disposed contacts (32, 34, 38, 40) for supply electrical input signals to set the memory material to a selected resistance value within a dynamic range, a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and the position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby proving for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.

THRESHOLD SWITCHING DEVICE

THRESHOLD SWITCHING DEVICE This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesqulioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.

MULTIBIT SINGLE CELL MEMORY HAVING TAPERED CONTACT

An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element (36) with multibit storage capabilities and having at least one contact (6) for supplying electrical input signals to set the memory element to a selected resistance value and a second contact (8) tapering to a peak (16) adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.

COMPOSITE MEMORY MATERIAL COMPRISING A MIXTURE OF PHASE-CHANGE MEMORY MATERIAL AND DIELECTRIC MATERIAL

A composite memory material (36) comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures of alloys thereof. A single cell memory element (30) comprising the aforementioned composite memory material (36), and a pair of spacedly disposed contacts (6, 8).

Elektrodensystem unsymmetrischer Leitfähigkeit.

Schaltelement

Kontaktanordnung für Festkörperschalter

Elektrisches Schaltelement, das den quantenmechanischen Tunneleffekt ausnutzt

Speicheranordnung

Elektrische Schaltung mit einem elektrisch isolierenden Träger und Verfahren zu deren Herstellung

Elektronisches Festkörperschaltelement und Verfahren zu seiner Herstellung

Verfahren und Vorrichtung zum Speichern und Abrufen von Informationen

Nachrichtenspeicheranlage mit einem Film aus amorphem Speichermaterial

Verfahren zur Herstellung einer Tunneleffekt aufweisbaren Dünnschichtanordnung

Elektronisches, bistabiles Halbleiterschaltelement