Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer, and methods of fabricating the same

A cross-point non-volatile memory device using a binary metal oxide layer as a data storage material layer includes spaced apart doped lines 106 disposed in a substrate. Spaced apart upper electrodes 116 cross over the doped lines such that cross points C are formed where the upper electrodes overlap the doped lines. Lower electrodes 110' are disposed at the cross points between the doped lines and the upper electrodes. A binary metal oxide layer 114 is provided between the upper electrodes and the lower electrodes as a data storage material layer. The binary metal oxide layer may comprise a transition metal oxide or aluminium oxide. Doped regions 108' are provided between the lower electrodes and the doped lines and have an opposite conductivity type to the doped lines in order to form diodes together with the doped lines to reduce crosstalk between adjacent memory cells caused by leakage currents.