ЛАЗЕР С ВЕРТИКАЛЬНЫМ РЕЗОНАТОРОМ И ВЫВОДОМ ИЗЛУЧЕНИЯ ЧЕРЕЗ ПОВЕРХНОСТЬ, НАБОР ЛАЗЕРОВ И СПОСОБ ПОВЫШЕНИЯ КПД ЛАЗЕРНОГО УСТРОЙСТВА

Изобретение относится к лазерной технике. В устройстве и способе генерирования мощного лазерного излучения геометрия лазерного резонатора определяет основную пространственную или поперечную резонаторную моду. Внутри резонатора расположена усиливающая среда, и источник энергии активизирует усиливающую среду в пределах первого объема. Это вызывает спонтанное и вынужденное испускание энергии, распространяющееся в усиливающей среде в направлении, поперечном основной резонаторной моде. Это поперечное испускание энергии, в свою очередь, накачивает второй объем усиливающей среды, расположенный вокруг первого объема. Когда интенсивность испускания достаточно высока, во втором объеме создаются инверсия и усиление. За счет оптимизации геометрии резонатора таким образом, чтобы основная резонаторная мода проходила как через первый, так и через второй объемы, окружая первый накачиваемый объем, поперечно направленная энергия первого объема, которая иначе была бы потеряна, захватывается основным лучом ...

ОПТИЧЕСКИЙ ПОЛУПРОВОДНИКОВЫЙ ЭЛЕМЕНТ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ, ОПТИЧЕСКИЙ ПОЛУПРОВОДНИКОВЫЙ ЭЛЕМЕНТ НА ОСНОВЕ ОКСИДА ЭЛЕМЕНТА II ГРУППЫ И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение относится к оптическим полупроводниковым элементам, таким, как светоизлучающий элемент, лазерный элемент и элемент цветного дисплея, и к способу их изготовления. Техническим результатом изобретения является снижение порога лазерной генерации, уменьшение длины волны излучаемого света, снижение потерь. Сущность: тонкая пленка ZnO изготавливается на с-поверхности подложки сапфира за счет использования метода лазерной молекулярно-пучковой эпитаксии (МВЕ). В оптическом полупроводниковом элементе на основе оксида элемента II группы используют тонкую пленку оксида цинка, содержащую магний или кадмий в состоянии твердого раствора. За счет добавления магния или кадмия ширина запрещенной зоны оксида цинка может регулироваться внутри диапазона от 3 до 4 эВ. 4 с. и 4 з.п. ф-лы, 1 табл., 32 ил.

ТВЕРДОТЕЛЬНЫЙ ЛАЗЕРНЫЙ ПРИБОР С ОПТИЧЕСКОЙ НАКАЧКОЙ С САМОРЕГУЛИРУЮЩЕЙСЯ ОПТИКОЙ НАКАЧКИ И УЛУЧШЕННЫМ УСИЛЕНИЕМ

Изобретение относится к лазерной технике. Твердотельный лазерный прибор с оптической накачкой содержит лазерную среду в лазерном резонаторе. Резонатор образован первым зеркалом резонатора, расположенным с первой стороны лазерной среды, и вторым зеркалом резонатора, расположенным со второй стороны, противоположной первой стороне. Первое зеркало резонатора образовано из распределенного брэгговского отражателя, на котором расположена твердотельная лазерная среда. Первые и вторые зеркала резонатора выполнены и расположены с возможностью направлять лазерное излучение из резонатора по двум различным прямым путям через лазерную среду. Лазерный диод накачки выполнен и расположен с возможностью оптически накачивать упомянутую лазерную среду путем отражения излучения накачки на отражающем излучение накачки зеркале. Отражающее излучение накачки зеркало расположено на второй стороне и выполнено с возможностью отражать излучение накачки к лазерной среде. Отражающее излучение накачки зеркало и второе ...

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОГО ЛАЗЕРА С НАКАЧКОЙ ЭЛЕКТРОННЫМ ПУЧКОМ

Использование: при создании мощных полупроводниковых лазеров с накачкой электронным пучком большого сечения. Сущность изобретения: на полупроводниковой пластине их теллурида кадмия с оптическим резонатором, состоящим из двух зеркал, одно из которых глухое, последнее изготавливают на поверхности с кристаллографической ориентацией (III) путем травления этой поверхности в смеси азота и соляной кислот в пропорции 1 : 1 при температуре кипения этой смеси в течение 10 - 20 с. 1 табл.

Light-emitting semiconductor array, has pumping lasers directing beams parallel to common plane, to excite surface-emitting semiconductor lasers

The array comprises surface-emitting semiconductor lasers (1) arranged in a plane, with an external resonator. Each pumping laser (2) emits a beam directed laterally, for optical pumping of the surface-emitting semiconductor lasers. Each beam is directed parallel to the common plane.

Halbleiterlaser und Modulationsverfahren

LASERELEKTRONENSTRAHLRÖHRE

Halbleiterlaser

Optischer Halbleiterverstärker

Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung

Oberflächenemittierende Halbleiterlaservorrichtung mit einem mittels einer Pumpstrahlungsquelle optisch pumpbaren Vertikalemitter (20), der eine strahlungserzeugende Schicht (14) und einen externen Resonator aufweist, dadurch gekennzeichnet, daß zumindest eine Modulationsstrahlungsquelle (30) zur Modulation der Ausgangsleistung der oberflächenemittierenden Halbleiterlaservorrichtung vorgesehen ist, die eine kantenemittierende Halbleiterstruktur (15) mit einer strahlungserzeugenden aktiven Schicht umfaßt, und die so angeordnet ist, daß sie im Betrieb Strahlung emittiert, die in die strahlungserzeugende aktive Schicht (14) des Vertikalemitters (20) eingekoppelt wird und dort eine mittels der Pumpstrahlungsquelle erzeugte Besetzungsinversion zumindest teilweise abbaut.

OBERFLÄCHENEMITTIERENDER LASER MIT VERTIKALEM RESONATOR

OPTISCH GEPUMPTER PASSIV MODENGEKOPPELTER OBERFLÄCHENEMITTIERENDER HALBLEITERLASER MIT EXTERNEM RESONATOR

Optisches Gerät

Oberflächenemittierender Halbleiterlaser und Verfahren zu dessen Herstellung

Oberflächenemittierender Halbleiterlaser mit – einem Halbleiterchip (1), der ein Substrat (2) und eine auf dem Substrat (2) aufgewachsene Halbleiterschichtenfolge (19), die eine strahlungsemittierende aktive Zone (12) umfasst, enthält, und – einem externen Resonatorspiegel (5), dadurch gekennzeichnet, dass – das Substrat (2) eine Ausnehmung (3) aufweist und die emittierte Strahlung (6) durch die Ausnehmung (3) ausgekoppelt wird, und – zum optischen Pumpen des oberflächenemittierenden Halbleiterlasers eine außerhalb des Halbleiterchips (1) angeordnete Pumpstrahlungsquelle (8) vorgesehen ist, wobei die von der Pumpstrahlungsquelle (8) emittierte Pumpstrahlung (9) durch die Ausnehmung (3) des Substrats (9) in die aktive Zone (12) eingestrahlt wird.

Enhanced emission of light from organic light emitting diodes

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

IMPROVEMENTS OF OPTICAL SEMICONDUCTOR DEVICES WITH VERTICAL RESONATOR

DIRECT CURRENT-COUPLED DRIVE WITH ACTIVE TIME LIMITATION

Microchip-Laser

Ein Mierechip-Laser umfasst einen monolithischen Resonator (1 ), der einen doppelbrechenden Laserkristall (2) aufweist, wobei ein aus dem Resonator (1) ausgekoppelter Laserstrahl (9), der eine Laserwellenlänge aufweist. entlang einer Laserstrahlachse (12) aus dem Resonator (1) austritt und die auf die Richtung der Laserstrahlachse (12) bezogene Länge (L) des Resonators (1) kleiner als 150 iJm ist. Der Laserkristall (2) weist eine derartige auf die Richtung der Laserstrahlachse (12) bezogene Dicke (D) auf, dass bei einem in Richtung der Laserstrahlachse (12} erfolgenden Einfall eines die Laserwellenlänge aufweisenden Lichtstrahls (16} auf den Laserkristall (2) zwischen dem ordentlichen und dem außerordentlichen Strahl (17, 19}, in welche der Lichtstrahl (16) im Laserkristall (2) aufgeteilt wird, bei einem einzelnen Durchlauf durch den Laserkristall (2) eine Phasenverschiebung im Bereich von rr/2 +/- lT/4 auftritt.

DEVICES TO THE STIMULATED EMISSION FROM SILICON NANO-PARTICLES

CONTINUOUS REMOTE UV LASER SYSTEM WITH TWO ACTIVE RESONATORS

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

Toggling optoelectronic device and method

Optical sources having a strongly scattering gain medium providing laser-like action

Optical switching device

Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump

EXTERNAL CAVITY SEMICONDUCTOR LASER SYSTEM

Thin-film large-area coherent light source, filter and amplifier apparatus and method

SEMICONDUCTOR LASER CRT TARGET

MODE-LOCKING SEMICONDUCTOR DISK LASER (SDL)

The present invention describes a mode locking semiconductor disk laser (SDL). The laser comprises a resonator terminated by first and second mirrors (6,7) and folded by a third mirror. The third mirror comprising a semiconductor disk laser (8) suitable for generating a resonator field comprising a predetermined central wavelength AO while the second mirror comprising an intensity saturable mirror (7) suitable for mode locking the resonator field at the predetermined wavelength. The reflectivity of the of the resonator at the central wavelength AO is reduced by shifting the reflectivity profiles of the first and or second mirrors to wavelength shorter than the predetermined wavelength so as to suppress gain at wavelengths longer than the central wavelength AO. By mismatching the reflectivity profile (32) of the second mirror (7) to that of the desired output wavelength (3) provides a stable mode locked laser with significantly reduced noise. The SDL may comprise a DBR with a reflectivity ...

IMPROVED SELF MODE-LOCKING SEMICONDUCTOR DISK LASER (SDL)

A self mode locking laser and corresponding method is described. The laser comprises a resonator (2) terminated by first (3) and second (4) mirrors and folded by a third mirror (5). The third mirror comprises a reflector (15) surmounted by a multilayer semiconductor gain medium (16) that includes at least one quantum well layer and an optical Kerr lensing layer (20). A perturbator is also included that provides a means to induce a perturbation on an intensity of one or more cavity modes of the resonator. The pertubator is employed to induce a small perturbation on the intensity of the cavity modes of the resonator which is sufficient for the optical Kerr lensing layer to induce mode locking on the output field. The second mirror (4) comprises an intensity saturable mirror that provides a means for reducing the pulse widths of the generated output field e.g. to around 100 fs. A diamond heat spreader (20) is attached to the top of the half VCSEL gain medium (13) for improved cooling as well ...

OPTICAL SOURCES HAVING A STRONGLY SCATTERING GAIN MEDIUM PROVIDING LASER-LIKE ACTION

A gain medium is comprised of a multi-phase system wherein: a first phase is an electromagnetic radiation emission phase; a second phase is an electromagnetic radiation scattering phase; and a third phase is a transpare nt matrix phase. By example, the emission phase may consist of dye molecules, t he scattering phase may consist of high contrast particles, and the matrix phas e may consist of a solvent such as methanol. In some embodiments of this invention the emission and scattering phases may be the same phase, as when semiconductor particles are employed. A smallest dimension of a body compris ed of the gain medium may be less than a scattering length associated with the scattering phase. It is shown that nearly thresholdless laser behavior is observed in strongly scattering optically pumped dye-methanol solutions containing colloidal TiO2 or Al2O3 ruby nanoparticles. The emission from the high gain colloid exhibits a slope change in the linear input-output characteristics above a ...

LONG WAVELENGTH VERTICAL CAVITY LASER WITH INTEGRATED SHORT WAVELENGTH PUMP LASER

A long wavelength vertical cavity laser with an integrated short wavelength pump laser. The laser provides a short wavelength pump laser having a long wavelength laser in overlying relation. The stimulated emission from the short wavelength laser acts to activate the long wavelength laser. Optically transparent glue fixes and mounts the lasers in vertical alignment. Alignment problems are not realized with the structure and no free carrier losses or other complexities typically associated with the prior art arrangements are realized.

Composite cavity laser with adjustable laser emission direction

Incoherent light-emitting device apparatus for driving vertical laser cavity

Method for preparing vertical cavity surface emitting laser by in-situ growth of perovskite single crystal thin film and vertical cavity surface emitting laser

Optically pumped, surface-emitting semiconductor laser and method for producing the same

SYSTEM AND METHOD FOR MICRO LASER PARTICLES

Key unit with supporting frame

Laser compact à semi-conducteur du type à pompage électronique.

Laser à semi-conducteur compact du type à pompage par bombardement électronique effectué par une matrice (23) de cathodes à micropointes. Le semi-conducteur (10) du type à gap direct est supporté par une électrode (50) et maintenu en regard de la matrice (23). Des écrans de focalisation (44, 46) permettent de focaliser le bombardement électronique sur une bande de la surface semi-conductrice. L'ensemble est maintenu dans une enceinte (34) sous vide secondaire. Application au traitement optique du signal.

Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer

MONOLITHIC INFRA-RED LAMP HAS SEMICONDUCTOR PUMPS BY A SOLID MICROLASER STARTS

Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer

High frequency electromagnetic radiation transmitter for e.g. wireless network, has laser source and photoconductor whose epitaxial layer has charge carriers with mobility higher than preset value and resistivity lying within preset range

L'invention concerne un émetteur et un détecteur de rayonnement électromagnétique comprenant une source d'excitation (7), un photoconducteur comportant une couche épitaxiale d'un matériau semi-conducteur non intentionnellement dopé (1), ladite couche étant formée sur un substrat d'un matériau semi-conducteur (2) ayant un numéro atomique élevé et une bande interdite de l'ordre de 1,4 eV et des moyens pour émettre un rayonnement électromagnétique (11, 15) à partir des porteurs de charge générés. Selon l'invention, la source d'excitation émet au moins un flux lumineux dont la longueur d'onde λ est comprise entre 1,3 µm et 1,6 µm. Le générateur comprend une optique de couplage (9) destinée à diriger lesdites impulsions sur le photoconducteur. La durée de vie des porteurs de charge de ladite couche épitaxiale (1) générés par ce flux lumineux est inférieure à la picoseconde, la mobilité de ces porteurs est supérieure à 200 cm2V-1s-1 à température ambiante et la résistivité de ladite couche (1 ...

PROCESS Of ASSEMBLY OF TWO STRUCTURES AND DEVICE OBTAINED BY the PROCESS. APPLICATIONS TO THE MICROLASERS

LIDAR PULSED SEMICONDUCTOR OPTICAL AMPLIFIER

L'invention se situe dans le domaine de l'observation de l'atmosphère par un lidar. Elle concerne un lidar pulsé agencé pour la détermination d'une propriété de l'atmosphère, telle qu'une vitesse du vent. Le lidar comprend : ▪ un laser maître (11) apte à générer un faisceau laser maître (Fm), ▪ un amplificateur optique (13) agencé pour amplifier le faisceau laser maître (Fm) en fonction d'un signal de pompage (Sp), ▪ un générateur d'impulsions (14) agencé pour générer le signal de pompage (Sp), et ▪ un capteur (18) agencé pour recevoir une partie du faisceau laser de mesure rétrodiffusé par le volume de mesure, appelée faisceau laser de retour (Fret), et générer un signal de mesure (Smes) comprenant une information représentative d'une caractéristique du faisceau laser de retour (Fret). Selon l'invention, l'amplificateur optique est un amplificateur optique à semi-conducteur (13), et le signal de pompage (Sp) est déterminé de sorte que l'amplificateur optique à semi-conducteur génère un ...

Semiconductor-laser component, optical device for a semiconductor-laser component and method for the production of an optical device

A semiconductor-laser component is provided, which has a semiconductor-laser chip (1) used for the generation of radiation, and an optical device, which includes a carrier (7), a radiation-diverting element (8) arranged on the carrier, and a mirror arranged on the carrier, where the mirror is formed as an external mirror (9) of an external optical resonator for the semiconductor-laser chip (1), the radiation-diverting element (8) is arranged within the resonator, the radiation-diverting element (8) is formed to divert at least one part of the radiation (13, 160) generated from the semiconductor-laser chip (1) and reflected by the external mirror, the carrier has a lateral main-extension direction and the semiconductor-laser chip (1) is arranged after the carrier in the direction vertical to the lateral main-extension direction.

ENHANCED EMISSION OF LIGHT FROM ORGANIC LIGHT EMITTING DIODES

A device comprising an organic light emitting diode coupled to a cavity, said cavity containing an emitting species, said device being arranged such that light emitted from said organic light emitting diode is at least partially absorbed by the emitting species and re-emitted from the emitting species. The device may be arranged such that the emitting species acts as the gain media of a laser, and the organic light emitting diode may be arranged to pump the emitting species. Also provided is method of generating light, said method comprising: coupling an organic light emitting diode to a cavity, said cavity containing an emitting species, said organic light emitting diode and said cavity being arranged such that light emitted from said organic light emitting diode is at least partially absorbed by the emitting species; operating said organic light emitting diode to emit light which is at least partially absorbed by the emitting species; and re-emitting light from the emitting species.

INTRACAVITY CONTACT VCSEL STRUCTURE AND METHOD FOR FORMING THE SAME

A VCSEL device has at least one intracavity contact interleaved with oxidation trenches is disclosed. Interleaving the electrical contacts with the trenches reduces the lateral carrier transport length for current injection associated with the use of an intracavity contact, thereby reducing lateral resistance, while allowing short oxidation times and short oxidation lengths to form the VCSEL confinement structure.

SEMICONDUCTOR OPTICAL PUMPING DEVICE FOR RADIATION EMISSION AND THE PRODUCTION METHOD THEREOF

The invention relates to a semiconductor optical pumping device for radiation emission comprising a semiconductor body which is provided with at least one pumping radiation source (20) and a quantum pit surface emitting structure (11). Said pumping radiation source (20) and quantum pit structure (11) are monolithically integrated. The pumping radiation source (20) produces pumping radiation (2) which is used for the optical pumping of the quantum pit structure (11). A cavity for injecting the pumping radiation (2) into a quantum pit structure (9) is formed in the semiconductor body between the pumping radiation source (20) and the quantum pit structure (11). The method for producing the inventive device is also disclosed.

INGAN DIODE-LASER PUMPED II-VI SEMICONDUCTOR LASERS

A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of ...

Pumped edge emitters with metallic coatings

An edge emitting structure includes an active region configured to generate radiation in response to excitation by a pumping beam incident on the structure. A front facet of the edge emitting structure is configured to emit the radiation generated by the active region. A metallic reflective coating disposed on at least one of the front and rear facets of the edge emitting structure. The metallic reflective coating is configured to reflect the radiation generated by the active region.

Surface emitting laser, laser array, light source device, information acquisition device, and optical coherence tomography apparatus

A surface emitting laser includes a pair of reflecting mirrors (11, 15) and an active layer (13) that is arranged between the pair of reflecting mirrors (11, 15) and that is to be excited by light that is radiated from an external light source. A gap is formed between the active layer and one of the pair of reflecting mirrors (15), the oscillation wavelength of the surface emitting laser is changed, and a defining structure (20) that defines a light-emitting region of the active layer (13) is arranged in at least one of a region between the pair of reflecting mirrors (11, 15) and a region in at least one of the pair of reflecting mirrors (11, 15).

Optically-pumped external-mirror vertical-cavity semiconductor-laser

A optically-pumped semiconductor (OPS), vertical-cavity, surface-emitting laser (VCSEL) includes a first mirror having a quantum-well structure thereon which provides a gain medium for the laser. A second mirror is spaced apart from the quantum-well structure and, together with the first mirror, forms a resonant cavity for the laser. Optical pump-radiation is directed through the gap into the quantum-well structure via an outermost layer of the quantum-well structure. The quantum-well structure includes a plurality of quantum-well layers spaced apart by pump-radiation absorbing layers. Quantum-well and pump-radiation absorbing layers are aluminum-free layers of alloys of the GaAs/InGaAsP system.

PHOTO-PUMPED SEMICONDUCTOR OPTICAL AMPLIFIER

An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.

VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter

A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.

Optoelectronic component

An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

ELECTRON-JUMP CHEMICAL ENERGY CONVERTER

A method and a device for converting energy uses chemical reactions in close proximity to or on a surface to convert a substantial fraction of the available chemical energy of the shorter lived energized products, such as vibrationally excited chemicals and hot electrons, directly into a useful form, such as longer lived charge carriers in a semiconductor. The carriers store the excitation energy in a form that may be converted into other useful forms, such as electricity, nearly monochromatic electromagnetic radiation or carriers for stimulating other surface reactions.

LASER DEVICE

An end surface of a solid-state laser element is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface of a wavelength conversion element is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface and the end surface are arranged in such a way as to be opposite to each other. 1. A laser device including a pump laser that emits pumping light , a solid-state laser element that absorbs the pumping light emitted from said pump laser to generate laser light , and an optical element upon which the laser light generated by said solid-state laser element is incident , whereinan end surface of said solid-state laser element is sloped in such a way that, in a case in which it is assumed that said laser light is incident upon air from the end surface of said solid-state laser element, an angle of incidence which a normal to an end face on a side of said solid-state laser element in a plane of the incidence forms with a traveling direction of said laser light substantially matches a Brewster angle at the incidence plane, an end surface of said optical element is sloped in such a way that, in a case in which it is assumed that said laser light is incident upon air from the end surface of said optical element, an angle of incidence which a normal to an end face on a side of said optical element in a plane of the incidence forms with a traveling direction of said laser light substantially matches a Brewster angle at the incidence plane, and the end surface of said solid-state laser element ...

LASER WITH HEXAGONAL SEMICONDUCTOR MICRODISK

A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting.

OPTICALLY PUMPED SEMICONDUCTOR DEVICE FOR RADIATION EMISSION AND THE PRODUCTION METHOD THEREOF

ИНТЕГРАЛЬНЫЙ ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР-УСИЛИТЕЛЬ

Использование: квантовая электронная техника, а именно высокомощные одномодовые и/или одночастотные высококогерентные источники излучения, которые применяются для накачки твердотельных и волоконных лазеров, для создания лазерных источников излучения в видимой области спектра за счет генерации второй гармоники в нелинейных оптических кристаллах. Сущность изобретения: в интегральном полупроводниковом лазере-усилителе, состоящем из задающего лазера и оптического усилителя, вывод излучения распределен по поверхности оптического усилителя в заданном порядке, а каждое средство вывода выполнено в виде выемки определенной глубины с отражателем на одной из ее границ и области, прозрачной для вывода излучения, расположенной на пути отраженного выводимого сигнала, обеспечивающих не только вывод части усиленного излучения, но и прохождение оставшейся ее части дальнейшего ее усиления в последующей накачиваемой инжекционным током области усиления. 16 з. п.ф-лы, 8 ил.

ПОЛУПРОВОДНИКОВЫЙ ЛАЗЕР

Использование: квантовая электронная техника, а именно, одномодовые и/или одночастотные высококогерентные источники излучения высокой мощности, которые применяются для создания лазерных источников излучения в видимой области спектра. Сущность изобретения: в устройстве полупроводникового лазера, состоящем из полосковой активной области генерации с отражателями оптического резонатора, например, типа Фабри-Перо, выводы излучения распределены по поверхности ПАОГ в заданном порядке, а каждое средство вывода выполнено в виде выемки определенной глубины с отражателями на обеих ее гранях и прозрачной для вывода излучения области, расположенной на пути отраженных выводимых сигналов, обеспечивающих не только вывод части генерируемого излучения, но и прохождение оставшейся ее части для дальнейшего ее усиления в последующей накачиваемой инжекционным током области. Кроме того, за счет различных вариантов исполнения тех же выемок стало возможным получением приборов с составным резонатором, а также лазеров ...

ТВЕРДОТЕЛЬНЫЙ ЛАЗЕРНЫЙ ПРИБОР С ОПТИЧЕСКОЙ НАКАЧКОЙ С САМОРЕГУЛИРУЮЩЕЙСЯ ОПТИКОЙ НАКАЧКИ И УЛУЧШЕННЫМ УСИЛЕНИЕМ

ДИСКОВЫЙ ЛАЗЕР

... 1. Дисковый лазер, состоящий из оптического резонатора с первой оптической осью, вдоль которой распространяется генерируемое излучение внутри оптического резонатора; активной пластины, имеющей первую поверхность и вторую поверхность, размещенной внутри оптического резонатора и закрепленной на хладопроводящей подложке своей первой поверхностью; лазера накачки; системы фокусировки излучения лазера накачки и многопроходной оптической системы накачки, которая содержит отражающий слой, размещенный между пластиной и подложкой; плоский отражатель с зеркальным покрытием, размещенный рядом с активной пластиной; и, по меньшей мере, один внешний отражатель, имеющий вогнутую поверхность с зеркальным покрытием; в котором пучок излучения лазера накачки первоначально фокусируется в пятно возбуждения на второй поверхности активной пластины в месте пересечения первой оптической осью; проходит через активную пластину, частично поглощаясь в ней; отражается от отражающего слоя; вновь проходит через активную ...

Organisches Faserlasersystem und Verfahren

Strahlungsemittierendes Halbleiterbauelement mit vertikaler Emissionsrichtung und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements

Es wird ein strahlungsemittierendes Halbleiterbauelement (1) mit vertikaler Emissionsrichtung angegeben, das einen Halbleiterkörper (2) mit einer Halbleiterschichtenfolge aufweist. In der Halbleiterschichtenfolge ist ein zur Erzeugung einer Pumpstrahlung vorgesehener Pumpbereich (3) ausgebildet. Auf dem Pumpbereich (3) ist ein zur Erzeugung einer Emissionsstrahlung vorgesehener Emissionsbereich (4) angeordnet. In dem Halbleiterbauelement ist eine Koppelstruktur (7) ausgebildet. Weiterhin wird ein Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements (1) angegeben.

Verfahren zur Identifizierung eines Objektes und ein Objekt, das durch ein solches Verfahren identifizierbar ist

Laser beam amplification by homogenous pumping of an amplification medium

Apparatus 10 for amplifying a laser beam using a pump beam, comprised of a plurality of source beams 22, through an amplification medium 14; the amplification medium is pumped via a pump module 16 having a laser diode bar 18 and an optical assembly 30; the optical assembly has a first lens acting as a fast axis collimator 34 (Figure 3b), an array of second lenses acting as slow axis collimators 42 and a third focusing lens acting in both the fast and slow axis 36; the lenses are spaced so that the individual source beams from the emitters are imaged upon a facet of the amplification medium, are sized to fill the facet and overlap on the facet. In one embodiment the amplification medium is rectangular and has a long edge and a short edge oriented parallel to the slow axis and fast axis of the laser diode bar respectively. In another embodiment the source beams are directed so that peripheral source beams undergo total internal reflection on entering the amplification medium. In one embodiment ...

Laser

A laser comprises a chip structure having a surface 38, a first mirror 35 integrated with the chip structure 30 and a semiconductor gain medium 34 arranged in the chip structure between the surface and the first mirror 35. The laser has an optical fibre 50 at the end of which is arranged an integral second mirror 52. The end of the optical fibre is positioned above the surface of the chip structure to form a laser cavity with the semiconductor gain medium and the first mirror. The laser may have a piezoelectric tuning fork (60, Figure 9) attached to the optical fibre in order to vary the distance between the optical fibre and the chip structure. By varying the distance between the optical fibre and the chip structure the cavity length can be altered thereby tuning the laser. The first mirror may be a Bragg mirror having alternating semiconductor layers, alternating dielectric layers or may have multiple dielectric layers. The laser may be electrically or optically pumped. The laser may ...

Optical device

The device comprises a quantum dot and a photonic cavity where the cavity is configured to define a preferred emission direction for photons exiting the cavity. The device comprises a self assembled InAs quantum dot layer within a Bragg mirror layer structure which is etched to define an optical cavity. The etch pattern may comprise an array of holes or a series of concentric rings with an irregularity in the pattern so that the cavity is formed at the irregularity. The device may be configured to provide a regular stream of single photons in response to irradiation from a laser diode. The device can also be configured as an optical switch or transistor by irradiating the device with a control beam having an energy equal to a hybridised mode of the device.

Quantum dot photon source with reduced output pulse duration

A photon source comprises at least one quantum dot, a carrier injection means and a change of state means. Carriers are injected into the photon source and recombine radiatively within the quantum dot causing a pulse of photon emission. The state of the carriers in the quantum dot is changed after a predetermined length of time which is less than the radiative decay time. This allows the optical output pulse duration W to be selected, thus reducing the jitter in the device. Preferably a pulsed electrical bias is applied to the photon source to change the state of the carriers which includes removal or addition of one or both types of carrier from or to the quantum dot, emptying the quantum dot of all types of carrier, separating the carriers within the source body of moving the carriers into an optically dark state. The carriers may be injected into the quantum dot by electrical or optical excitation.

OPTICALLY PUMPED DIODE LASER WITH RESONATOR-INTERNAL FREQUENZUMWANDLUNG

Microchip-Laser

Ein Microchip-Laser umfasst einen monolithischen Resonator (1), der einen doppelbrechenden Laserkristall (2) aufweist, wobei ein aus dem Resonator (1) ausgekoppelter Laserstrahl (9), der eine Laserwellenlänge aufweist, entlang einer Laserstrahlachse (12) aus dem Resonator (1) austritt und die auf die Richtung der Laserstrahlachse (12) bezogene Länge (L) des Resonators (1) kleiner als 150 µm ist. Der Laserkristall (2) weist eine derartige auf die Richtung der Laserstrahlachse (12) bezogene Dicke (D) auf, dass bei einem in Richtung der Laserstrahlachse (12) erfolgenden Einfall eines die Laserwellenlänge aufweisenden Lichtstrahls (16) auf den Laserkristall (2) zwischen dem ordentlichen und dem außerordentlichen Strahl (17, 19), in welche der Lichtstrahl (16) im Laserkristall (2) aufgeteilt wird, bei einem einzelnen Durchlauf durch den Laserkristall (2) eine Phasenverschiebung im Bereich von rr/2 +/- rr/4 auftritt.

PASSIVELY Q-SWITCHED SOLID STATE LASER

Ein passiv gütegeschalteter Festkörperlaser umfasst einen Resonator (1), in dem ein aktives Lasermaterial (2) angeordnet ist und der einen Auskoppel-Endspiegel (6) zur Auskopplung von Laserpulsen aus dem Resonator (1) aufweist, welche eine Pulsdauer von weniger als 1 ns aufweisen, eine optische Faser (13), in welche die aus dem Auskoppel-Endspiegel (6) ausgekoppelten Laserpulse eingekoppelt werden, und ein gechirptes Volumen Bragg-Gitter (17), an welchem eine Reflektion der Laserpulse nach ihrem Durchlauf durch die optische Faser (13) zur Verkürzung der Pulsdauer erfolgt. Die Pulsdauer nach der Reflektion am gechirpten Volumen BraggGitter (17) beträgt weniger als 30 ps. Das im Resonator (1) angeordnete aktive Lasermaterial (2) ist Nd:YAG und im Resonator ist im Weiteren ein von Cr.VAG gebildeter sättigbarer Absorber (3) angeordnet ist, der eine Transmission im ungesättigten Zustand von weniger als 50% aufweist. Die Länge (a) des Resonators (1) liegt im Bereich von 1 mm bis 10mm und die ...

RADIATION EMITTER WITH BENT PUMPING JET

DIODE LASER SYSTEM WITH EXTERNAL RESONATOR

OPTICALLY PUMPING THE PASSIVE OF FASHION-COUPLED SURFACE-EMITTING DIODE LASER WITH EXTERNAL RESONATOR

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

SILICON NANO-PARTICLE AND PROCEDURE FOR THE PRODUCTION THE SAME

Optical pumping of a solid-state gain-medium using a diode-laser bar stack with individually addressable bars

A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

Automatic power control (apc) loop for adjusting the bias current of a laser diode

A automatic power control loop comprises a photo diode used for sensing a light intensity of a laser diode to generate a feedback current, a switch selector used for selecting one among a plurality of predetermined currents according to a control signal generated by a controller, a transducer used for transferring a current different between the feedback current and the selected predetermined current into a load voltage, a comparator used for comparing the load voltage with a reference voltage to generate a comparison signal, a counter used for counting a count value according to the comparison signal and the control signal, and a laser diode driver used for generating a corresponding bias current in response to the count value to drive the laser diode. Thereby, the bias current will be adjusted within an allowable range, so that the light source of the laser diode can maintain a constant light intensity.

Intra-cavity optical parametric oscillator

An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

Symmetrical, Direct Coupled Laser Drivers

Symmetrical, direct coupled laser drivers for high frequency applications. The laser drivers are in integrated circuit form and use a minimum of relatively small (low valued) external components for driving a laser diode coupled to the laser driver through transmission lines. An optional amplifier may be used to fix the voltage at an internal node at data frequency spectrum to improve circuit performance. Feedback to a bias input may also be used to fix the voltage at the internal node. Programmability and a burst mode capability may be included.

driver for supplying modulated current to a laser

A driver device for a laser includes a control device configured to generate a control current, an NPN differential amplifier connected to the control device and configured to superimpose a modulation current onto the control current to generate a combined current, and a laser activation switch coupled to the output of the NPN differential amplifier, the laser activation switch operating the laser utilizing the combined current. Also described herein is a communication system including a driver device.

Diode laser

A diode laser is provided with wavelength stabilization and vertical collimation of the emitted radiation, which allows a small distance of the volume Bragg grating from the emitting surface, a small vertical diameter of the collimated beam and also compensation for manufacturing tolerances affecting the shape of the grating and the lens. The diode laser comprises an external frequency-selective element for wavelength stabilization of the laser radiation, wherein the external frequency-selective element comprises an entry surface facing the exit facet and an exit surface facing away from the exit facet and is designed as a volume Bragg grating; and wherein the external frequency-selective element is designed in such a manner that the divergence of the radiation emitting from the exit facet is reduced during passage through the external frequency-selective element.

Laser driver

An apparatus is provided. The apparatus includes a lasing element, a laser driver and logic. The laser driver is configured to drive the lasing element at multiple current levels, and the laser driver includes a switching network, multiple direct current (DC) loops, and an output circuit. The switching network receives a differential input signal, and each DC loop is coupled to the switching network. The output circuit is also coupled to the lasing element, and the logic is coupled to each of the DC current loops, where the logic selects one or more of the DC loops in each (of several) modes. Each mode generates one or more output lasing currents for the lasing element that corresponds to a one or more of the current levels in response to the differential input signal.

SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF

A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part () comprising a layered first mirror (), providing a second component part () comprising a layered active region (), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror () so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum. 1. A method of manufacturing a surface-emitting semiconductor laser device , comprising:providing a pre-fabricated first component part comprising a first mirror having at least one mirror layer;providing a pre-fabricated second component part comprising an active region having at least one active layer made from a semiconductor material;joining the second component part to the first component part to form an integral unit;providing a second mirror forming an optical cavity with the first mirror such that the active region is located inside said optical cavity, so as to obtain a surface-emitting semiconductor laser device.2. The method of claim 1 , wherein the second component part is joined to the first component part by pressing or by a wafer bonding method claim 1 , in particular claim 1 , by liquid capillary bonding.3. The method of claim 1 , wherein the second component part comprises a second substrate on which the active region is disposed claim 1 , and wherein the second component part is joined to the first component part in an orientation so that the active region faces the first component part and the second substrate faces away from ...

REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER FOR OPTICAL NETWORKS

The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength. 1. An apparatus configured to amplify light at different wavelengths in an optical network , the apparatus having a waveguide , the waveguide comprising:a first active material configured to amplify light at a first wavelength received at a first end of the waveguide;a second active material configured to amplify light at a second wavelength;a first reflector located between the first and second active materials and which is configured to reflect light at the first wavelength in a direction toward the first end and which is configured to be substantially transparent to light at the second wavelength; anda second reflector adjacent the second active material which is configured to reflect light at the second wavelength in a direction toward the first end.2. The apparatus of claim 1 , wherein the first active material and/or the second active material comprise Gallium claim 1 , Indium claim 1 , Arsenide and/or Phosphide.3. The apparatus of claim 1 , whereinthe apparatus comprises a waveguide carrying the light at ...

Method and system for communicating with a laser power driver

A system for controlling a plurality of laser diodes includes an optical transmitter coupled to the laser diode driver for each laser diode. An optical signal including bi-phase encoded data is provided to each laser diode driver. The optical signal includes current level and pulse duration information at which each of the diodes is to be driven. Upon receiving a trigger signal, the laser diode drivers operate the laser diodes using the current level and pulse duration information to output a laser beam.

OPTICAL PUMPING OF A SOLID-STATE GAIN-MEDIUM USING A DIODE-LASER BAR STACK WITH INDIVIDUALLY ADDRESSABLE BARS

A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum. 1. A method of optically pumping a gain medium with a stack of diode laser bars , wherein at least some of the diode-laser bars in the stack have a different peak-emission wavelength at different temperatures , with the peak-emission wavelengths being directly dependent on the diode laser bar temperature , said method comprising the step of:supplying current to at least one but less than all the bars in the stack to generate laser output for optically pumping the gain medium;monitoring the temperature of the stack; andin response to the monitored temperature, changing which bars in the stack receive current in order to better match the wavelength emission of the stack to the peak absorption wavelength of the gain medium.2. The method of claim 1 , wherein the selected gain-medium is Nd:YAG claim 1 , the predetermined absorption band has a primary peak absorption at a wavelength of about 808 nanometers with a lower secondary peak at a wavelength of about 805 nanometers.3. The method of claim 1 , wherein the diode-laser bar stack is sandwiched between first and second cooling members each having a surface in thermal and electrical contact with the diode-laser bar stack.4. The method of wherein the temperature of the stack is monitored by temperature sensor.5. The method of claim 4 , wherein the temperature sensor is embedded in one of the cooling members proximate the surface thereof in thermal and electrical contact with the diode-laser bar stack.6. The method of wherein said step of changing ...

Three-terminal vertical cavity surface emitting laser (vcsel) and a method for operating a three-terminal vcsel

A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

Slot waveguide structure for wavelength tunable laser

Exemplary embodiments provide a wavelength tunable laser device and methods using the wavelength tunable laser device for a laser tuning. An exemplary wavelength tunable laser device can include an active gain element, a slot waveguide structure, and a wavelength tuning structure including heating elements disposed around the grating structure for a wavelength selection.

Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus

A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector.

Laser system and method of operation

An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the centre wavelength of radiation being for example within the absorption band of laser gain material used at the centre point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.

COMPOUND ENCLOSURE FOR OPTICAL APPARATUS

An optically pumped semiconductor laser is assembled in an enclosure comprising a base, a first mounting frame attached to the base, a second mounting frame attached to the first mounting frame and a cover attached to the second mounting frame. The assembly base, frames, and cover forms an undivided enclosure, with the frames contributing to walls of the enclosure. Components of the laser are assembled sequentially on the base and the frames. The frames are irregular in height to permit flexibility in the mounting-height of components. This reduces the extent to which compactness of the enclosure is limited by any one component. 1. Optical apparatus , the optical apparatus including a plurality of components and being contained in an enclosure comprising:a base-member, configured to provide a floor of the enclosure;one or more open frame-members stacked on the base-member and forming walls of the enclosure;a cover-member covering the enclosure; andwherein at least one of the components of the apparatus is mounted on a frame-member.2. The apparatus of claim 1 , wherein the optical apparatus includes a laser-resonator formed by at least two minors claim 1 , a gain-medium within the laser-resonator claim 1 , and a diode-laser array for optically pumping the gain-medium.3. The apparatus of claim 2 , wherein the diode-laser array is attached to the base member claim 2 , and at least one of the resonator minors is attached to a frame member.4. The apparatus of wherein there are first and second frame members claim 1 , with the first frame member attached to the base-member claim 1 , the second frame-member attached to the first frame member claim 1 , and the cover-member attached to the second frame member.5. The apparatus of claim 4 , wherein the optical apparatus is an intra-cavity doubled optically pumped semiconductor (OPS) laser having an OPS-structure including a gain-structure surmounted by a mirror-structure claim 4 , a laser-resonator formed between the mirror- ...

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength. In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

METHOD TO DRIVE SEMICONDUCTOR LASER DIODE AND METHOD TO ASSEMBLE OPTICAL TRANSCEIVER IMPLEMENTED WITH THE SAME

A method to operate a semiconductor laser diode (LD) in a differential configuration is disclosed. The method first obtains the threshold current Iin a bared LD under at least one temperature. Then, a linear relation with coefficients of α and β between the bias current Iand the modulation current Iindependent of temperatures is evaluated by, under the operation of the APC circuit to set the bias current and under the at least one temperature, measuring at least two extinction ratios, ERand ER, as varying the modulation current at two levels, Iand I. Two coefficients of α and β are estimated by a mathematical comparison. 1. A method to drive a semiconductor laser diode (LD) installed in an apparatus by providing signals complementary to each other to a cathode and an anode thereof differentially from a differential driver , the LD being supplied with a bias current directly and a modulation current indirectly through the differential driver , the method comprising steps of: {'br': None, 'i': I', '=α×I, 'sub': M', 'B, '+β,'}, 'obtaining two parameters that correlates the modulation current with respect to the bias current in a linear equation denoted as{'sub': M', 'B, 'where Iis the modulation current, Iis the bias current, and α and β are the two parameters;'}setting the bias current by an auto-power control (APC) such that the apparatus outputs light with a target average power; anddetermining the modulation current by referring to the two constants.2. The method of claim 1 ,wherein the driver includes a current source to determine a current a portion of which is converted into the modulation current; andwherein the step of obtaining the two parameters includes steps of:obtaining a threshold current of the LD from a current-to-light characteristic of the LD not installed in the apparatus;obtaining a basic bias current of the LD so as to set an average power of light output from the apparatus in a target power manually not using the APC; andobtaining a relation ...

REGENERATIVE AMPLIFIER, LASER APPARATUS, AND EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM

A regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the slab amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position. 115-. (canceled)16. A regenerative amplifier used in combination with a laser device , the regenerative amplifier comprising:a pair of resonator mirrors constituting an optical resonator;{'sub': '2', 'an amplifier containing COgas and provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and'}an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position.17. The regenerative amplifier according to claim 16 , wherein a pair of mirrors, and', 'a reflective surface of at least one of the pair of the mirrors is spherical-concave., 'the optical system includes'}18. The regenerative amplifier according to claim 16 , wherein a pair of mirrors, and', 'a reflective surface of at least one of the pair of the mirrors is flat., 'the optical system includes'}19. The regenerative amplifier according to claim 18 , whereina spherical lens is disposed to face the reflective surface of the at least one of the pair of the mirrors.20. A regenerative amplifier used in combination with a laser device claim 18 , the regenerative amplifier ...

ELECTRON-BEAM-PUMPED LIGHT SOURCE

The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters. 1. An electron-beam-pumped light source comprising:an electron beam source; anda semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, whereinthe electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, andlight exits from a surface which the electron beam from the electron beam source of the semiconductor light-emitting device enters.2. The electron-beam-pumped light source according to claim 1 , wherein the electron beam emitting portion is formed of a carbon nanotube.3. The electron-beam-pumped light source according to claim 1 , wherein the electron beam source is arranged so as to surround the semiconductor light-emitting device.4. The electron-beam-pumped light source according to claim 1 , wherein the electron beam source is formed of an annular band-shaped member surrounding the semiconductor light-emitting device.5. The electron-beam-pumped light source according to claim 1 , wherein a plurality of the electron beam sources are ...

Multi-chip ops-laser

A two-chip OPS laser includes first and second OPS-chips each emitting the same fundamental wavelength in first and second resonators. The first and second resonators are interferometrically combined on a common path terminated by a common end-mirror. The interferometric combination provides for automatic wavelength-locking of the laser, which can eliminate the need for a separate wavelength selective device in the laser.

MODULATION AVERAGING REFLECTORS

Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity. 2: The optical waveguide component of claim 1 , wherein said product is substantially equal to a natural number.3: The optical waveguide component of claim 1 , wherein said optical waveguide component is disposed on a planar lightwave circuit chip.4: The optical waveguide component of claim 1 , wherein said second port is terminated with a highly reflective structure.5: The optical waveguide component of claim 4 , wherein said optical waveguide component is disposed on a planar lightwave circuit chip having an optically flat edge and said highly reflective structure comprises a coating disposed on said optically flat edge.7: The planar lightwave circuit of claim 6 , configured for operation with amplitude modulated optical signals modulated at a line rate claim 6 , wherein a product of said line rate and each of said round-trip times is equal to or greater than unity.8: An optical source comprising claim 6 ,an optical gain element operatively configured to emit a first amplitude modulated optical signal, said amplitude modulation characterized by a symbol duration;a segment of distribution optical fiber coupled to said optical gain element;an array-waveguide grating having a grating-common port and a plurality of wavelength-specific ports, said segment of distribution optical fiber coupled to one of said wavelength-specific optical ports;an optical coupler having at least a coupler- ...

METHOD AND APPARATUS FOR SUPPRESSING OPTICAL BEAT INTERFERENCE NOISE IN RAMAN AMPLIFIERS

A method and apparatus for suppressing pump-mode optical beat interference noise in a Raman amplified fiber link of an optical network, wherein a wavelength of a laser beam generated by a first pump laser and a wavelength of a laser beam generated by a second pump laser of a pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the Raman amplified fiber link of said optical network. 1. A method for suppressing optical beat interference noise in a fiber link of an optical network ,wherein a wavelength of a laser beam generated by a first pump laser and a wavelength of a laser beam generated by a second pump laser of a pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the fiber link of said optical network.2. A pump signal generation apparatus adapted to generate a pump signal with suppressed optical beat interference , OBI , noise in a fiber link of an optical network , comprisingat least one pair of polarization multiplexed pump lasers having wavelengths which are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the fiber link of said optical network.3. The apparatus according to claim 2 ,wherein each pair of polarization multiplexed pump lasers comprises a first pump laser and a second pump laser connected to a corresponding polarization beam combiner (PBC) adapted to combine the orthogonal polarized laser beams generated by the first and second pump laser.4. The apparatus according to claim 3 ,wherein a wavelength of a laser beam generated by the first pump laser and a wavelength of a laser beam generated by the second pump laser of each pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference noise.5. The apparatus according to claim 4 ,wherein each pair of polarization ...

LIGHT-EMITTING COMPONENT AND LIGHT-EMITTING DEVICE

A light-emitting component includes laser elements and a setting unit. Each laser element is set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state. The setting unit sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”. 1. A light-emitting component comprising:a plurality of laser elements, each laser element being set to be in an on state with a logical value “m (m represents an integer of 1 or more)”, an on state considered as having a logical value “0”, or an off state; anda setting unit that sets the laser element to be in a state ready to transition to an on state and sets the laser element in the state ready to transition to the on state to be in the on state considered as having a logical value “0” before a timing of setting the laser element to the on state with a logical value “m”.2. The light-emitting component according to claim 1 , wherein:the plurality of laser elements are divided into a plurality of groups, andthe setting unit includes a plurality of transfer pathways that transfer the state ready to transition to the on state for the respective groups so that while the laser elements of a particular group are in the on state with a logical value “m”, the laser elements of another group are set to assume the on state with a logical value “0”.3. The light-emitting component according to claim 2 , wherein the plurality of transfer pathways in the setting unit perform transfer by switching a direction of transfer between an alignment direction of the laser elements and a direction opposite to the alignment direction.4. The light-emitting component according to claim 1 , wherein the setting unit includes a ...

WAVELENGTH LOCKER USING MULTIPLE FEEDBACK CURVES TO WAVELENGTH LOCK A BEAM

A device may include a first photodetector to generate a first current based on an optical power of an optical beam. The device may include a beam splitter to split a portion of the optical beam into a first beam and a second beam. The device may include a wavelength filter to filter the first beam and the second beam. The wavelength filter may filter the second beam differently than the first beam based on a difference between an optical path length of the first beam and an optical path length of the second beam through the wavelength filter. The device may include second and third photodetectors to respectively receive, after the wavelength filter, the first beam and the second beam and to generate respective second currents. 126-. (canceled)27. A device , comprising:a laser emitter to generate a laser beam to be wavelength locked to a target frequency based on an emission frequency to be measured by the device; 'the laser beam to be wavelength locked based on the first current;', 'a first photodetector to generate a first current based on a first optical power of the laser beam,'}a beam splitter to split a portion of the laser beam into a first beam and a second beam; the patterned etalon to have different optical path lengths for the first beam and the second beam, and', 'the patterned etalon to filter the first beam and the second beam to a second optical power and a third optical power, respectively, based on the different optical path lengths; and, 'a patterned etalon to filter the first beam and the second beam,'} 'a selected current, of the respective second currents, to be used to wavelength lock the laser beam.', 'second and third photodetectors to generate respective second currents,'}28. The device of claim 27 , wherethe beam splitter is further to split the portion of the laser beam into a third beam and a fourth beam, andthe third beam is received by the first photodetector without being filtered by the patterned etalon.29. The device of claim 27 , ...

Vertical cavity surface emitting laser and method for manufacturing the same, electronic apparatus, and printer

A vertical cavity surface emitting laser includes a base and a layered element provided on the base. The layered element includes a first mirror layer, a second mirror layer, and an active layer provided between the first mirror layer and the second mirror layer. The layered element further includes a light exiting section via which light produced in the active layer exits. The light exiting section is an outermost surface of an AlGaInP layer or an AlGaAsP layer.

MEMS BASED SWEPT LASER SOURCE

A MEMS-based swept laser source is formed from two coupled cavities. The first cavity includes a first mirror and a fully reflective moveable minor and operates to tune the output wavelength of the laser. The second cavity is optically coupled to the first cavity and includes an active gain medium, the first mirror and a second mirror. The second cavity further has a length substantially greater than the first cavity such that there are multiple longitudinal modes of the second cavity within a transmission bandwidth of the first cavity output. 1. A swept laser source , comprising:a first cavity formed between a first mirror and a moveable mirror that is fully reflective, the first cavity being operable to select at least one longitudinal mode of the first cavity as a first cavity output;a second cavity optically coupled to the first cavity to receive the first cavity output, the second cavity including an active gain medium operating as an optical amplifier and being formed between the first minor and a second minor, the second cavity having a length substantially greater than the first cavity such that there are multiple longitudinal modes of the second cavity within a transmission bandwidth of the first cavity output, the second cavity producing a laser output including at least one longitudinal mode of the second cavity that has a line width within the first cavity output; anda Micro-Electro-Mechanical Systems (MEMS) actuator coupled to the moveable minor to cause a displacement thereof to select the at least one longitudinal mode of the first cavity for the first cavity output, thereby tuning an output wavelength of the laser output;wherein the first cavity, the second cavity and the MEMS actuator are fabricated on a silicon substrate.2. The swept laser source of claim 1 , wherein the first cavity operates as a notch rejection filter in the optical domain and as a selective notch reflection filter in the presence of the active gain medium in the second cavity to ...

EMISSION SOURCE AND METHOD OF FORMING THE SAME

In various embodiments, an emission source may be provided. The emission source may also include a gain medium including a halide semiconductor material. The emission source may further include a pump source configured to provide energy to the gain medium. The halide semiconductor material may include a lead-free perovskite material. 1. A emission source comprising:a gain medium comprising a halide semiconductor material; anda pump source configured to provide energy to the gain medium;wherein the halide semiconductor material comprises a lead-free perovskite material.2. The emission source according to claim 1 ,wherein the pump source is an optical source configured to provide light as energy to the gain medium.3. The emission source according to claim 1 ,wherein the pump source is an electrical source configured to provide electrical energy to the gain medium.4. The emission source according to claim 1 , the emission source further comprising:a resonant cavity, the gain medium arranged within the resonant cavity:wherein the resonant cavity is defined by a first reflective structure and a second reflective structure, the gain medium arranged between the first reflective structure and the second reflective structure along an optical axis.5. The emission source according to claim 4 ,wherein the first reflective structure is arranged to reflect light incident on the first reflective structure towards the second reflective structure along the optical axis and the second reflective structure is arranged to reflect light incident on the second reflective surface towards the first reflective surface along the optical axis.6. The emission source according to claim 4 ,wherein the first reflective structure is partially transparent so that light incident in the first reflective structure is partially transmitted through the first reflective structure and partially reflected towards the second reflective structure along the optical axis.7. The emission source according to ...

LASER DRIVER WITH MAINTAINING AVERAGE OPTICAL POWER CONSTANT

The laser driver including a difference amplifier, a target potential circuit, an adjusting circuit, and bypass circuit is disclosed. The differential amplifier outputs a driving signal and a reverse driving signal having a phase opposite to a phase of the driving signal. The bypass circuit outputs an output current in response to the driving signal for generating a driving current for a semiconductor laser element that emits an optical signal in response to the driving signal. The adjusting circuit controls average potential of the driving signal and the reverse driving signal, so that the average potential becomes substantially equal to a target potential provided by the target potential circuit. The target potential corresponds to average optical power of the optical signal. When amplitude of the driving signal is changed for adjusting an extinction ratio of the optical signal, the adjusting circuit maintains the average optical power in a constant value. 1. A laser driver for generating a driving current for a semiconductor laser element in response to a differential input signal , the semiconductor laser element receiving a direct current from a direct current source connected in series with the semiconductor laser element , the laser driver comprising: an upper node,', 'a lower node connected to a reference potential line,', 'a first current source to provide a first source current flowing in the lower node;', 'a pair of first resistors each having a first end and second end, the first ends of the first resistors being connected with the upper node, the second end of one of the first resistors outputting a driving signal, the second end of another of the first resistors outputting a reverse driving signal having a phase opposite to a phase of the driving signal, and', 'a pair of first transistors configured to divide the first source current into a first current and a second current in response to the differential input signal, the first current flowing in the ...

Wavelength Stabilized Diode Laser

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Brag grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability. 1. A device configured to generate at least one laser emission , the device comprising:a semiconductor gain section generating a light emission, said semiconductor gain section comprising:a rear facet having a first reflectivity; anda front facet having a second reflectivity, said rear facet and said front facet forming a first resonant cavity having a first plurality of non-lasing resonance, and receive said light emission; and', 'reflect a portion of the received light emission back into the semiconductor gain section, wherein the rear facet of the semiconductor gain section and the volume Bragg grating form a second resonant cavity, overlapping the first resonant cavity, said second resonant cavity generating a second plurality of non-lasing resonances, wherein at least one of said first plurality of non-lasing resonances and a corresponding at least one of said second plurality of non-lasing is substantially coincident, said substantially at least one coincident resonance having a modal gain sufficient to generate corresponding ones of said at least one laser emission., 'a volume Bragg grating, having a known reflectivity, configured to2. The device of claim 1 , wherein the rear facet reflectivity is fixed and the front facet reflectivity is chosen such that the modal gain of the first plurality of resonances is less than said lasing ...

SINGLE-PHOTON SOURCE WITH HIGH INDISCERNIBILITY FACTOR

A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter. 1. A single-photon source , comprising:a support substrate comprising a reflective layer;a photonic wire,resting on the support substrate and arranged facing the reflective layer, and extending along a longitudinal axis Δ substantially orthogonal to the plane of the support substrate;comprising a single-photon emitter;forming a monomode waveguide for the single photons; andhaving transverse dimensions that vary longitudinally in the direction of an upper end of the photonic wire, so as to form a mode adapter for a guided optical mode;an optical excitation device designed to excite the emitter through a laser pulse, and thus bring about the spontaneous emission of single photons by the emitter;the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis Δ:a lower part, resting in contact with the support substrate, in which the emitter is arranged,an upper part, suspended above the lower part and optically coupled thereto,the single-photon source furthermore comprising a holding structure, comprising:at least one pillar resting in contact with the support substrate and arranged adjacent to the photonic wire, andat least one holding arm mechanically connecting the upper part to the pillar and keeping the upper part suspended above the lower part.2. The single-photon source according to claim 1 , wherein the lower part has a volume less than that of the upper part.3. The single-photon source according to claim 1 , wherein the upper part comprises the mode adapter.4. The single-photon source according to claim 1 , wherein the upper part is spaced from the lower part by a ...

BEAM PROJECTOR MODULE FOR PERFORMING EYE-SAFETY FUNCTION USING TEMPERATURE, AND CONTROL METHOD THEREOF

An embodiment provides a beam projector module that includes: a light source configured to output light; a substrate configured to support the light source; an optical device configured to reduce the light in terms of intensity output to a predetermined space; a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed space with the substrate and the optical device; a temperature sensor configured to measure a temperature of the frame; and a processor configured to control an output of the light source. The processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the frame exceeds a reference value. 1. A beam projector module comprising:a light source configured to output light;a substrate configured to support the light source;an optical device configured to reduce the light in terms of intensity output to a predetermined space;a frame configured to space the optical device apart from the light source by a predetermined distance, the frame forming a closed inner space with the substrate and the optical device;a temperature sensor configured to measure a temperature of the beam projector module; anda processor configured to control an output of the light source,wherein the processor is configured to operate the light source in an eye-safety mode when a temperature drop rate of the beam project module exceeds a reference value.2. The beam projector module of claim 1 , wherein the temperature sensor is connected to the frame to measure a temperature of the frame claim 1 , and the processor is configured to operate the light source in the eye-safety mode when a temperature drop rate of the frame exceeds a reference value.3. The beam projector module of claim 1 , wherein the temperature sensor is connected to the optical device to measure a temperature of the optical device claim 1 , and the processor is configured to operate the light source in the ...

Laser driver with variable resistor and variable capacitance element, and optical transmitter including the same

A laser driver includes a differential amplifier and a driver. The differential amplifier includes a first series circuit and a second series circuit each including a resistor, a transistor, and a current source that are connected in series to each other, a variable resistor connected between emitters of the transistors, and a variable capacitance element connected in parallel to the variable resistor. The differential amplifier generates a driving signal having amplitude proportional to amplitude of a differential signal externally input to the transistors. The driver generates a driving current in response to the driving signal for driving the semiconductor laser connected in series to the driver. The laser driver changes frequency characteristics of the differential amplifier by adjusting the variable resistor and the variable capacitance element to correct frequency characteristics of the semiconductor laser. The laser driver may improve eye opening of an optical signal output from the semiconductor laser.

RAPIDLY TUNABLE LASER ASSEMBLY

A laser assembly for generating an output beam includes a first module assembly, a second module assembly, and a module fastener assembly. The second module assembly is selectively movable relative to the first module assembly to selectively adjust a cavity length, and a pivot axis of a grating in the laser. Further, an arm assembly that retains the grating can be adjusted to adjust the cavity length, and to adjust the plane of the grating face. Moreover, the grating is movable relative to the arm assembly to align the grating. 117-. (canceled)18. A laser assembly for emitting an output beam , the laser assembly comprising:a first module assembly that includes (i) a rigid first frame; and (ii) a gain medium coupled to the first frame, the gain medium having a facet, the gain medium generating a beam that exits the facet along a lasing axis when sufficient current is directed to the gain medium;a second module assembly that includes (i) a rigid second frame; (ii) a diffraction grating positioned in the path of the beam exiting the facet to form an external cavity having a cavity length; (iii) an arm assembly that retains the diffraction grating; and (iv) a pivot assembly that secures the arm assembly to the second frame in a fashion that allows the arm assembly and the grating to effectively pivot about a pivot axis; anda module fastener assembly that is moveable between (i) an unlocked position in which the second frame can be selectively moved relative to the first frame to selectively adjust at least one of the cavity length, and the position of the pivot axis relative to the lasing axis; and (ii) a locked position in which the second module assembly is fixedly secured to the first module assembly to inhibit relative movement between the first frame and the second frame.19. The laser assembly of wherein in the unlocked position claim 18 , the second frame can be selectively moved relative to the first frame to selectively adjust the cavity length.20. The laser ...

Polarization stable widely tunable short cavity laser

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. A short cavity laser with a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation is disclosed. Methods for obtaining polarization stable operation of the tunable source are presented.

MECHANICALLY ISOLATED OPTICALLY PUMPED SEMICONDUCTOR LASER

A housing for an optically pumped semiconductor (OPS) laser resonator is terminated at one end thereof by an OPS-chip. The laser resonator is assembled on a platform with the OPS-chip at one end of the platform. The platform is fixedly attached to a baseplate at the OPS-chip end of the platform. The remainder of the platform extends over the baseplate with a gap between the platform and the baseplate. A pump-laser is mounted directly on the baseplate and delivers pump radiation to the OPS-chip. 1. Laser apparatus , comprising:a cantilever platform having first and second opposite ends;a baseplate having first and second opposite surfaces;an optically pumped semiconductor (OPS) laser-resonator including an OPS-chip, the OPS laser-resonator assembled on the cantilever platform with the OPS-chip bonded to a heat-sink attached to the first end of the cantilever platform;wherein the first end of the cantilever platform is supported on the baseplate, and a remaining portion of cantilever platform including the second end thereof extends over the baseplate with a gap between the remaining portion of the cantilever platform and the baseplate; andwherein a pump-radiation source is mounted on the first surface of the baseplate and arranged to deliver optical pump radiation to the OPS-chip for energizing the OPS laser-resonator.2. The apparatus of claim 1 , wherein the gap between the remaining portion of the cantilever platform and the baseplate is provided by a trough formed in the first surface of the baseplate.3. The apparatus of claim 2 , wherein the cantilever platform is rectangular and the trough is rectangular.4. The apparatus of claim 1 , wherein the pump radiation source includes a diode-laser.5. The apparatus of claim 1 , wherein the laser resonator is a folded laser resonator.6. The apparatus of claim 1 , further including a heat-sink attached to the second surface of the baseplate.7. The apparatus of wherein one end of the laser-resonator terminates in the OPS- ...

LASER DEVICE

The invention relates to a laser device, comprising a laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser, to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency, wherein the laser control module comprises a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity. 139.-. (canceled)40. A sensor comprising a laser device , comprising:a tunable laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency,wherein the laser comprises a laser cavity and the laser control module comprises a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity,wherein the laser control module is encapsulated inside a hermetically sealed housing.41. The sensor according claim 40 , wherein the tunable laser operates in a single longitudinal mode42. The sensor according to claim 40 , wherein the tunable laser is a fiber laser claim 40 , a diode laser or a solid-state laser43. The sensor according to claim 40 , wherein the frequency discriminating element comprises solid silica44. The sensor according to claim 40 , wherein the laser control module is fiber coupled to the tunable laser.45. The sensor according to claim 40 , wherein the laser control module is temperature controlled46. The sensor according to claim 40 , wherein the frequency discriminating element is an interferometer.47. The sensor according to claim 46 , wherein the interferometer is a Fabry-Perot interferometer.48. The sensor according to claim 46 , wherein the ...

EFFICIENT GENERATION OF SPATIALLY-RESTRUCTURABLE HIGH-ORDER HG-MODES IN A LASER CAVITY

A vertical external cavity surface emitting laser (VECSEL) based system in a linear single cavity configuration is configured to deliver light in higher-order Hermite-Gaussian transverse modes with Watt-level output power. Simultaneous and independent lasing of spatially-restructurable multiple high-order transverse modes that are collinearly-propagating at the output of such laser cavity is facilitated with the use of an optical pumping scheme devised to control positions of location at which the gain medium of the system is pumped (e.g., locations of focal spots of multiple pump beams on the gain-medium chip). An external astigmatic mode converter is utilized to convert such high-order Hermite-Gaussian modes into corresponding Laguerre-Gaussian modes. 1. A laser system , comprising:a linear laser cavity having a laser cavity axis and defined by first and second reflectors;a laser gain medium chip containing said first reflector;the second reflector dimensioned to have a center of curvature of the second reflector at an axial point of the first reflector;multiple pump channels configured to deliver pumping energy to the laser gain medium chip at respectively-corresponding multiple initial locations of a surface of the laser gain medium chip in a fashion that allows for spatially-varying said multiple initial locations; anda mechanism configured to cause, during the operation of the laser system, a change of first and second of said multiple initial locations to respectively-corresponding third and fourth locations.2. The laser system according to claim 1 , further comprising an astigmatic mode converter (AMC) system outside of the laser cavity on the laser cavity axis.3. The laser system according to claim 2 , wherein the AMC system is configured to have at least one of optical elements of the AMC system to be rotated about the laser cavity axis.4. (canceled)5. The laser system according to claim 1 , wherein at least one of the following conditions is satisfied:a) ...

Semiconductor laser driving circuit

The semiconductor laser driving circuit that controls an overshoot on modulation includes a semiconductor laser, of which anode is connected to a power source, that emits the laser light that is modulated by an external modulation input signal, an impedance element connected to a cathode of the laser device, an impedance element connected to the anode, and a collector of a transistor Q1, connected to the impedance element; a collector of a transistor Q2, connected to the other end of the impedance element, a differential pair circuit to which emitters of Q1, Q2 are connected; an electric current source iMOD connected to the emitters of Q1, Q2; and a differential driver that generates a differential voltage (vb1−vb2) that controls Q1, Q2 by driving Q1 by the external modulation input signal, wherein the differential driver controls the differential voltage so that the amplitude of the overshoot of the electric current, which flows in the laser when the output of the laser is at a high-level.

REFLECTION BASED SIGNAL PRE-EMPHASIS

Systems, and apparatus for adding reflection based pre-emphasis to a laser driver. In one aspect, a device includes a load (e.g. a laser) having a load impedance, a first end of a transmission line connected to the load, and a reflective impedance element connected to a second end of the transmission line. The reflective impedance element has a given impedance value that differs from the transmission line's characteristic impedance, and the characteristic impedance differs from the load impedance. This mismatch causes reflections between the reflective impedance element and the load. The reflections between the reflective impedance element and the load combine with an incident signal at the load to create a target signal having a target spectral shape. 1. A device comprising:a load having a load impedance;a first end of a transmission line connected to the load, wherein the transmission line has a characteristic impedance that differs from the load impedance; and the reflective impedance element has a given impedance value that differs from the characteristic impedance;', 'mismatches between the characteristic impedance and each of the given impedance value and the load impedance value causes reflections between the reflective impedance element and the load; and', 'the reflections between the reflective impedance element and the load combine with an incident signal at the load to create a signal having a target spectral shape., 'a reflective impedance element connected to a second end of the transmission line, wherein2. The device of claim 1 , wherein the transmission line is selected to provide a target amount of propagation delay.3. The device of claim 2 , wherein the specified amount of propagation delay is selected to achieve the signals having the target spectral shape.4. The device of claim 1 , wherein the transmission line provides a propagation delay corresponding to ½ a baud time in each direction.5. The device of claim 1 , wherein the target spectral shape ...

SYSTEM AND METHOD FOR CONTROLLING COLLOCATED MULTIPLE WAVELENGTH TUNED LASERS

Systems and methods are disclosed herein for controlling laser beams for a plurality of collocated laser assemblies. The laser beams are optimized by controlling outputs of a primary power source (current for generating a laser beam) and a secondary power source (heating device) for each of the respective laser assemblies. The states of the power supply may be cycled and modulated to provide optimal performance. 1detecting at a controller, a plurality of proximal lasers;determining a thermal effect caused by a first of the plurality of lasers on a second of the plurality of proximal lasers; andcontrolling an output of a primary power source.. A method for controlling a plurality of collocated lasers, the method comprising: This application is a continuation of U.S. patent application Ser. No. 14/456,738, filed Aug. 11, 2014, and claims priority to U.S. Provisional Application Ser. No. 61/889,320 filed Oct. 10, 2013, entitled “Semiconductor Laser Thermal Control Method for Collocated Multiple Wavelength Tuned Lasers,” the entire contents of which are hereby incorporated by reference.Semiconductor laser wavelength can vary due to changes in the device temperature. Semiconductor lasers such as distributed feedback (DFB) and/or ridge waveguide lasers often include electronic means to control the intensity and wavelength of the laser by applying a differential voltage to the positive and negative terminal and varying the laser current. By gradually increasing the applied current, the laser will operate with higher optical intensity and increasing wavelength. Only a portion of the applied energy is converted to optical energy while the remaining energy is converted to heat. Various control methods are employed to mitigate thermal variation to maintain desired nominal laser wavelength.One method used to control wavelength in semiconductor lasers is to apply a secondary current to an electrode in proximity to the laser device (e.g., with a heater) to tune the wavelength to ...

Quantum Cascade Laser with Serially Configured Gain Sections

An apparatus that includes a gain chip assembly, an external cavity, and a controller is disclosed. The gain chip assembly includes first and second gain chips that are coupled optically such that light travels serially between the first gain chip and the second gain chip, each gain chip is electrically biased. The electrical bias of the first gain chip is independent of the electrical bias of the second gain chip. The external cavity has a tunable wavelength selective filter that is changed in response to a control signal. Light in the external cavity passes through the gain chip assembly. The controller determines the tunable wavelength selective filter, and the electrical bias of each of the gain chips so as to cause the apparatus to lase at a wavelength specified by a control signal to the controller. 1. An apparatus comprising:a gain chip assembly comprising first and second gain chips that are coupled optically such that light travels serially between said first gain chip and said second gain chip, each gain chip being electrically biased, said electrical bias of said first gain chip being independent of said electrical bias of said second gain chip;an external cavity having a tunable wavelength selective filter that selectively passes light in a pass band that is changed in response to a control signal, light in said external cavity passing through said gain chip assembly; anda controller that generates said control signal, and said electrical bias of each of said gain chips,wherein said first gain chip comprises an active layer comprising a first sub-layer having a plurality of quantum well layers characterized by a first quantum well thickness, said second gain chip comprises an active layer having second and third sub-layers, said second sub-laver comprising a plurality of quantum well layers characterized by a second quantum well thickness, and said third sub-layer comprising a plurality of quantum well layers Characterized by a third quantum well ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θ(>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θ/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θ/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers. 1. A semiconductor laser device comprising:{'sub': 'S', 'a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θ(>4°) in a slow axis direction are arranged in the slow axis direction;'}a collimating lens that collimates the laser lights emitted from each of the active layers in a plane perpendicular to the slow axis direction;a first optical element that reflects first partial lights advancing to one side in the slow axis direction from among each of the laser lights emitted from the collimating lens by a first reflecting surface and returns the first partial lights to each of the active layers via the collimating lens; anda second optical element that reflects a part of the mode lights of a plurality of mode lights of second partial lights advancing to the other side in the slow axis direction from among each of the laser lights emitted from the collimating lens by a second reflecting surface and returns the part of the mode lights to each of the active layers via the collimating lens,{'sub': 'S', 'wherein the first optical element is disposed such ...

SINGLE LONGITUDINAL MODE LASER DIODE SYSTEM

A semiconductor laser diode system may include a single longitudinal mode laser diode and a feedback system that monitors and controls the emission characteristics of the laser diode. The laser diode may include a gain medium and an optical feedback device. The feedback system may include a wavelength discriminator, an optical detector, a microprocessor, and a laser controller. Such a semiconductor laser diode system may be used to produce laser light having coherence length, wavelength precision, and wavelength stability that is equivalent to that of a gas laser. Accordingly, such a semiconductor laser diode system may be used in place of a traditional gas laser. 1. A semiconductor laser diode system , comprising:a semiconductor laser source having a laser cavity;an optical feedback device, wherein the optical feedback device is a three-dimensional optical element having a Bragg grating recorded therein, and wherein the Bragg grating causes a narrowband portion of radiation emitted from the laser source to be fed back into the laser cavity, the optical feedback device being configured to cause the laser diode to achieve single longitudinal mode at a desired wavelength; anda feedback system that monitors emission characteristics of the laser diode, the feedback system comprising a processor that is configured to adjust one or more control characteristics of the laser diode to cause the laser diode to achieve and maintain a single longitudinal mode condition using only output power characteristics of the laser diode.2. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be fed back into the laser cavity as seed light at the desired wavelength.3. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be reflected back into the laser cavity as seed light at the ...

SEMICONDUCTOR RADIATION SOURCE

A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip. 115-. (canceled)16. A semiconductor radiation source comprising:at least one semiconductor chip that generates radiation;a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; andat least one capacitor body,whereinthe semiconductor chip directly electrically connects in a planar manner to the capacitor body,the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, andthe controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the controller and the semiconductor chip.17. The semiconductor radiation source according to claim 16 ,wherein the semiconductor chip is a semiconductor laser chip, andthe capacitor body has a larger base area than the semiconductor chip and an electrical contact area between the semiconductor chip and the capacitor body is at least 50% of the base area.18. The semiconductor radiation source according to claim 16 , wherein the semiconductor chip and the capacitor body have equal lateral dimensions along each direction with a tolerance of at most 10% claim 16 , and an electrical contact area between the semiconductor chip and the capacitor body is at least 80% of a base surface of the semiconductor chip.19. The semiconductor radiation source ...

OPTICAL SEMICONDUCTOR ELEMENT

An optical semiconductor element having a mesa portion includes a substrate and semiconductor layers on the substrate. The optical semiconductor element further includes a first contact electrode, a second contact electrode on the semiconductor layer, first and second lead-out wires connected to the first and second contact electrodes, respectively, and an insulating film covering at least an upper surface of the semiconductor layer and the second contact electrode. The second lead-out wire is connected to the second contact electrode in an opening of the insulating film. An outer peripheral end of the second contact electrode in at least a portion where the second contact electrode and the second lead-out wire are connected is above and outside an outer peripheral end of a connection portion with the semiconductor layer, and an inner peripheral end is above and inside an inner peripheral end of the connection portion with the semiconductor layer. 1. An optical semiconductor element having a light-transmitting surface , comprising:a substrate;a semiconductor layer provided on the substrate and configuring a mesa portion;a first contact electrode provided in contact with the semiconductor layer;a second contact electrode provided on the semiconductor layer so as to surround the light-transmitting surface;a first lead-out wire connected to the first contact electrode;a second lead-out wire connected to an upper surface of the second contact electrode; andan insulating film provided so as to cover at least an upper surface of the semiconductor layer and the second contact electrode, whereinan opening is included in the insulating film on the upper surface of the second contact electrode, and the second contact electrode and the second lead-out wire are connected to each other in the opening, andan outer peripheral end of the second contact electrode in at least a portion where the second contact electrode and the second lead-out wire are connected to each other is ...

NARROW LINEWIDTH EXTERNAL CAVITY LASER AND OPTICAL MODULE

A narrow linewidth external cavity laser includes a sealed housing, an external resonant cavity disposed in the sealed housing, and a gain chip and a tunable wavelength selective component disposed in the external resonant cavity. An electrical interface of the sealed housing is configured to receive an electrical signal such as a drive signal, a wave selection signal, a cavity length control signal, and a dither control signal. The cavity length control signal is configured to adjust an optical cavity length of the external resonant cavity so that a laser mode produced in the external resonant cavity aligns with a wavelength selected by the wavelength selective component. The dither control signal is configured to control the optical cavity length of the external resonant cavity to produce dither by adjusting an optical length of the gain chip in order to lock a center wavelength of an output light beam. 1. A narrow linewidth external cavity laser comprising:a sealed housing having disposed thereon an optical interface and an electrical interface;an external resonant cavity disposed in the sealed housing; anda gain chip and a tunable wavelength selective component that are disposed in the external resonant cavity,whereinthe electrical interface is configured to receive an electrical signal comprising a drive signal, a wave selection signal, a cavity length control signal, and a dither control signal,the drive signal is configured to drive the gain chip to emit a light beam, the light beam resonating in the external resonant cavity to produce a laser mode;the wave selection signal is configured to tune the wavelength selective component to select a wavelength;the cavity length control signal is configured to adjust an optical cavity length of the external resonant cavity so that the laser mode aligns with the wavelength selected by the wavelength selective component;the dither control signal is configured to control the optical cavity length of the external resonant ...

CRYSTALLINE COLOR-CONVERSION DEVICE

According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy. 1. A crystalline color-conversion device , comprising:an electrically driven first light emitter for emitting first light having a first energy in response to an electrical signal; andan inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy,wherein the second light emitter is electrically isolated from the first light emitter, is located in optical association with the first light emitter, and is located within 0 to 250 microns of the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.2. The crystalline color-conversion device of claim 1 , wherein the second light emitter has a composition different from the first light emitter.3. The crystalline color-conversion device of or claim 1 , wherein the first light emitter is an inorganic solid single-crystal direct bandgap light emitter.4. The crystalline color-conversion device of claim 3 , wherein the crystal lattice structure of the first light emitter is different from the ...

MODULATED LASER SOURCE AND METHODS OF ITS FABRICATION AND OPERATION

A modulated semiconductor laser source includes a waveguide on a semiconductor substrate; first and second reflectors; a laser electrode; an optical modulator; and a laser-electrode electrical circuit. The reflectors and a resonator segment of the waveguide define a laser resonator with laser output transmitted through the second reflector. The laser electrode is positioned over the resonator segment and a laser current flows through the laser electrode into the resonator segment to produce optical gain. The modulator receives and modulates the laser output, in response to a primary modulation signal, to produce a modulated output optical signal. The laser-electrode circuit is coupled to the laser electrode and derives from the primary modulation signal a laser-electrode secondary modulation current, optimized to reduce chirp in the modulated output signal, that flows through the laser electrode into or out of the resonator segment in addition to the laser current. 1. A modulated semiconductor laser source comprising:(a) an optical waveguide formed on a semiconductor substrate;(b) first and second optical reflectors arranged on the substrate or waveguide so that the first and second reflectors and a resonator segment of the waveguide define a laser resonator arranged so that laser output from the laser resonator is transmitted through the second reflector;{'sub': 1', '1, '(c) a laser electrode positioned over at least a portion, of length L, of the resonator segment of the waveguide, the laser electrode being arranged so as to enable a substantially constant laser current Ito flow through the laser electrode into the resonator segment of the waveguide and produce optical gain therein;'}(d) an optical modulator optically coupled to the laser resonator so as to receive at least a portion of the laser output and to modulate the laser output, in response to a time-varying primary modulation signal applied to the optical modulator, to produce a modulated output optical ...

MID-INFRARED VERTICAL CAVITY LASER

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases. 1. An optically pumped vertical cavity laser (VCL) optically pumped with a pump source at a pump wavelength and providing VCL emission at an emission wavelength , said VCL comprising:a first mirror,a second mirror, anda periodic gain active region,wherein said periodic gain active region comprises at least two type I quantum wells containing Indium, Arsenic, and Antimony, said active region further comprising a barrier region adjacent to said type I quantum wells which is absorbing at said pump wavelength, and a cladding region adjacent to said barrier region, which is substantially transparent at said pump wavelength.2. The VCL of claim 1 , wherein said type I quantum wells further contain Gallium.3. The VCL of claim 1 , wherein said emission wavelength is in a range of about 3-5 um.4. The VCL of claim 1 , wherein each of said quantum wells is compressively strained with a strain in a range of about 1-2%.5. The VCL of claim 1 , wherein said barrier region comprises quinary AlInGaAsSb.6. The VCL of claim 1 , wherein said cladding region comprises AlAsSb.7. The VCL of claim 1 , wherein said pump wavelength falls within one of the list of ranges from about 1.45-1.65 um claim 1 , about 1.7-2.1 um claim 1 , and about 0 ...

Tunable VCSEL with combined gain and DBR mirror

A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example. 1. A vertical surface emitting laser , comprising:a distributed Bragg reflector; andquantum wells located in the distributed Bragg reflector.2. The laser of claim 1 , further comprising a deflectable membrane carrying a mirror defining an optical cavity of the laser.3. The laser of claim 1 , wherein the quantum wells are located in shallow layers of the distributed Bragg reflector.4. The laser of claim 1 , wherein the quantum wells located in the distributed Bragg reflector are fabricated in AlGaAs/GaAs.5. The laser of claim 1 , wherein the quantum wells are located between high index layers and low index layers of the distributed Bragg reflector.6. The laser of claim 1 , wherein the quantum wells are located in high index layers of the distributed Bragg reflector.7. The laser of claim 1 , wherein the quantum wells are placed at antinodes of standing wave patterns in the laser.8. The laser of claim 1 , further comprising eight or more quantum wells.9. The laser of claim 1 , wherein the high index layers of the distributed Bragg reflector are thinner than the low index layers.10. The laser of claim 1 , wherein the quantum wells are optically pumped.11. The laser of claim 1 , wherein the quantum wells are electrically pumped.12. A vertical surface emitting laser system claim 1 , comprising:a vertical surface emitting laser, including a distributed Bragg reflector and quantum wells located in the distributed Bragg reflector; anda pump laser for optically pumping the quantum wells.13. The system of claim ...

OPTICAL AMPLIFIER

An optical amplifier is described. The optical amplifier () comprises a semiconductor disk gain medium () including at least one quantum well layer () and a pump field source () for generating an optical pump field () for the semiconductor disk gain medium. The optical amplifier acts to generate an output optical field () from an input optical field () received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium. Employing a semiconductor disk gain medium within the optical amplifier allows it to be optically pumped and thus provided for increased stability and beam quality of the output optical field while allowing for the design of optical amplifiers which can operate across a broad range of wavelengths. The optical amplifier may be employed with continuous wave or pulsed input optical fields. 1) An optical amplifier comprising a semiconductor disk gain medium that includes at least one quantum well layer; and a pump field source for generating an optical pump field for the semiconductor disk gain medium wherein the optical amplifier generates an output optical field from an input optical field received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium.2) An optical amplifier as claimed in wherein the semiconductor disk gain medium is mounted on a reflector.3) An optical amplifier as claimed in wherein the reflector comprises a Distributed Bragg Reflector (DBR).4) An optical amplifier as claimed in wherein the pump field source comprises a diode laser.5) An optical amplifier as claimed in wherein the input optical field comprises a continuous wave optical field.6) An optical amplifier as claimed in wherein the input optical field comprises a pulsed optical field.7) An optical amplifier as claimed in further comprising one or more steering optics arranged to form an input optical field resonator that provides a means for the input optical field to be incident upon the semiconductor ...

GRATING ELEMENT AND EXTERNAL RESONATOR TYPE LIGHT EMITTING DEVICE

A grating element includes: a support substrate; an optical material layer; a ridge optical waveguide having an incidence surface on which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; and a Bragg grating including concave and convex portions formed within the optical waveguide. The optical waveguide includes an incident portion between the incidence surface and the Bragg grating, and a tapered portion between the incident portion and the Bragg grating. In the Bragg grating, a propagation light propagates in single mode. The width Wof the optical waveguide in the incident portion is larger than the width Wof the optical waveguide in the Bragg grating. The width Wof the optical waveguide in the tapered portion is decreased from the incident portion toward the Bragg grating. The relationships represented by formulas (1) to (3) are satisfied. 1. A grating element comprising:a support substrate;an optical material layer disposed over said support substrate;a ridge optical waveguide disposed in said optical material layer, said ridge optical waveguide having an incidence surface to which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; anda Bragg grating comprising concave and convex portions formed within said ridge optical waveguide,wherein said ridge optical waveguide comprises an incident portion disposed between said incidence surface and said Bragg grating, and a tapered portion disposed between said incident portion and said Bragg grating,wherein a propagating light propagates at least in said Bragg grating in a single mode,wherein a width of said ridge optical waveguide in said incident portion is larger than a width of said ridge optical waveguide in said Bragg grating,wherein a width of said ridge optical waveguide in said tapered portion is decreased from said incident portion toward said Bragg grating, and [{'br': None, 'sub': 'G ...

EXTERNAL RESONANCE TYPE LASER MODULE, ANALYSIS APPARATUS, METHOD OF DRIVING EXTERNAL RESONANCE TYPE LASER MODULE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more). 1. An external resonance type laser module comprising:a quantum cascade laser;a MEMS diffraction grating configured to include a diffraction/reflection portion that diffracts and reflects light emitted from the quantum cascade laser and to return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion; anda controller configured to control driving of the quantum cascade laser,wherein the controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).2. The external resonance type laser module according to claim 1 , wherein the controller is configured to pulse-drive the quantum cascade laser such that the phase of the pulsed light changes by a predetermined value each time the diffraction/reflection portion reciprocates m times.3. The external resonance type laser module according to claim 2 , wherein the predetermined value is equal to a pulse ...

SEMICONDUCTOR LASER DEVICE

Provided is semiconductor laser device including heat dissipation block provided with flow path of a coolant, and first and second semiconductor laser modules Heat dissipation block include lower heat dissipation block formed with groove insulating sealant that has openings above groove and is disposed on lower heat dissipation block and first and second upper heat dissipation blocks covering openings respectively. First semiconductor laser module is disposed in contact with an upper surface of first upper heat dissipation block having a positive electrode side facing down, and second semiconductor laser module is disposed in contact with an upper surface of second upper heat dissipation block having a negative electrode side facing down. 1. A semiconductor laser device at least comprising:a heat dissipation block provided inside with a flow path through which a coolant flows; anda first semiconductor laser module and a second semiconductor laser module disposed in the heat dissipation block, a lower heat dissipation block formed with a groove constituting the flow path;', 'an insulating sealant disposed in contact with an upper surface of the lower heat dissipation block, having an opening above the groove; and, 'the heat dissipation block includingan upper heat dissipation block made of a conductive material disposed in contact with an upper surface of the insulating sealant, covering the opening,the first semiconductor laser module being disposed in contact with an upper surface of the upper heat dissipation block, having a positive electrode side facing down,the second semiconductor laser module being disposed in contact with the upper surface of the upper heat dissipation block, having a negative electrode side facing down.2. The semiconductor laser device according to claim 1 , whereinthe first and second semiconductor laser modules each include a lower electrode block, a sub-mount that is electrically connected to the lower electrode block, a semiconductor ...

DIGITAL PULSE WIDTH MODULATION POWER SUPPLY WITH PICO SECOND RESOLUTION

A laser system includes a laser generation element and a pulse width modulated (PWM) signal generator that uses a clock to generate a control signal having a period based on the clock frequency and includes a pulse width between a rising edge and a falling edge. The system also includes a switch mode power supply controlled by the control signal output by the PWM signal generator for providing power to the laser generation element based on the control signal. Also, the system includes a signal modification circuit that selectively delays the rising edge of each period of the control signal by one of one or more selectable durations thereby reducing the pulse width by a quantity, wherein the quantity is smaller than a minimum increment amount that the pulse width is able to change based on the clock frequency. 1. A laser system comprising:a laser generation element;a pulse width modulated (PWM) signal generator including a clock having a clock frequency, wherein the PWM signal generator uses the clock to generate a control signal having a period based on the clock frequency and including a pulse width between a rising edge and a falling edge;a switch mode power supply controlled by the control signal output by the PWM signal generator and electrically coupled to the laser generation element for providing power to the laser generation element based on the control signal; andsignal modification circuit electrically coupled with the PWM signal generator, wherein the signal modification circuit is configured to selectively delay the rising edge of each period of the control signal by one of one or more selectable durations thereby reducing the pulse width by a quantity, wherein the quantity is smaller than a minimum increment amount that the pulse width is able to change based on the clock frequency.2. The laser system of claim 1 , wherein the signal modification circuit comprises a resistor-capacitor (RC) circuit electrically coupled with a controller that is configured ...

Distributed feedback surface emitting laser

A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λ lase .

Self mode-locking semiconductor disk laser

The present invention describes a self mode locking laser and a method for self mode locking a laser. The laser ( 1 ) comprises a resonator terminated by first ( 3 ) and second ( 4 ) mirrors and folded by a third mirror ( 5 ). The third mirror comprises a single distributed Bragg reflector ( 17 ) upon which is mounted a multilayer semiconductor gain medium ( 18 ) and which includes at least one quantum well layer and an optical Kerr lensing layer ( 22 ). Self mode locking may be achieved by configuring the laser resonator such that the lensing effect of the Kerr lensing layer acts to reduce an astigmatism deliberately introduced to the cavity mode. The self mode locking of the laser may be further enhanced by selecting the length of the resonator such that a round trip time of a cavity mode is matched with an upper-state lifetime of one or more semiconductor carriers located within the gain medium.

NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER

A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. 1. A quantum cascade laser element comprising:a super lattice formed by a crystal of a nitride semiconductor;the super lattice having a plurality of unit structures, each of which includesa first barrier layer;a first well layer stacked on the first barrier layer;a second barrier layer stacked on the first well layer; anda second well layer stacked on the second barrier layer, the barrier layers and the well layers having high and low potentials, respectively, relative to potentials of conduction-band electrons of the crystal, a mediation level that has a significant probability of finding an electron in at least one of the first well layer and the second well layer;', 'an upper lasing level that has a significant probability of finding an electron in the first well layer; and', 'a lower lasing level that has a significant probability of finding an electron in the second well layer,, 'each unit structure including an energy level structure for electrons under a bias electric field in a stacking direction due to external voltage, the energy level structure havingunder the bias electric field, an energy value of the ...

MOVABLE DIFFRACTION GRATING, METHOD OF MANUFACTURING THE SAME, AND EXTERNAL RESONATOR TYPE LASER MODULE

A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern. 1. A movable diffraction grating comprising:a support portion;a movable portion swingably connected to the support portion;a coil buried in the movable portion;a magnetic field generator configured to apply a magnetic field to the coil;an insulation layer provided on a surface of the movable portion;a resin layer provided on the insulation layer and provided with a diffraction grating pattern; anda reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.2. The movable diffraction grating according to claim 1 ,wherein the coil is disposed inside a groove formed in the surface of the movable portion.3. The movable diffraction grating according to claim 1 ,wherein the diffraction grating pattern is disposed in an area overlapping the coil when viewed in a direction perpendicular to the surface of the movable portion.4. The movable diffraction grating according to claim 1 ,wherein the diffraction grating pattern is a blazed grating pattern diffracting light having a wavelength in a mid-infrared region.5. A method of manufacturing the movable diffraction grating according to claim 1 , comprising:a first step of preparing a substrate including a portion corresponding to the support portion and the movable portion and forming the coil to be buried in the movable portion;a second step of forming the insulation layer on the surface of the movable portion after the first step;a third step of disposing a resin material ...

Adjustable Termination Circuit for High Speed Laser Driver

Disclosed is a circuit having a high speed laser driver circuit, a semiconductor laser electrically connected to the high speed laser driver circuit, and an adjustable termination circuit electrically connected between the high speed laser driver circuit and the semiconductor laser, where the adjustable termination circuit is configured to control an output impedance seen by the semiconductor laser as a function of an input current provided to the adjustable termination circuit.

LIGHT EMISSION MODULE

A light emission module includes a base, a laser diode driver, a laser diode and a monitor photodiode. The laser diode driver, the laser diode and the monitor photodiode are disposed on the base. The monitor photodiode and the laser diode are located close to a front end of the laser diode driver. A rear side of the laser diode facing the front end of the laser diode driver. A end surface at the front end of the laser diode driver, a side surface at the rear side of the laser diode and a light receiving surface of the monitor photodiode are arranged in a triangle shape for reflecting a light emitted from the rear side of the laser diode to the light receiving surface of the monitor photodiode by the end surface of the laser diode driver. 1. A light emission module comprising a base , a laser diode driver , a laser diode and a monitor photodiode , the laser diode driver , the laser diode and the monitor photodiode disposed on the base , the monitor photodiode and the laser diode located close to a front end of the laser diode driver , a rear side of the laser diode facing the front end of the laser diode driver , the laser diode driver having an end surface located at the front end , the laser diode having a side surface located the rear side , and the monitor photodiode having a light receiving surface; the end surface of the laser diode driver , the side surface of the laser diode and the light receiving surface of the monitor photodiode arranged in a triangle shape for reflecting a light emitted from the rear side of the laser diode to the light receiving surface of the monitor photodiode by the end surface of the laser diode driver.2. The light emission module of claim 1 , wherein an angle between the end surface of the laser diode driver and an emission axis of the laser diode is from 20 degrees to 60 degrees.3. The light emission module of claim 2 , wherein the angle between the end surface of the laser diode driver and an emission axis of the laser diode is ...

MULTI-STAGE MOPA WITH FIRST-PULSE SUPPRESSION

A solid-state MOPA includes a mode-locked laser delivering a train of pulses. The pulses are input to a fast E-O shutter, including polarization-rotating elements, polarizing beam-splitters, and a Pockels cell that can be driven alternatively by high voltage (HV) pulses of fixed long and short durations. A multi-pass amplifier follows the E-O shutter. The E-O shutter selects every Nth pulse from the input train and delivers the selected pulses to the multi-pass amplifier. The multi-pass amplifier returns amplified seed-pulses to the E-O shutter. The shutter rejects or transmits the amplified pulses depending on whether the HV-pulse duration is respectively short or long. Transmitted amplified pulses are delivered to a transient amplifier configured for separately suppressing first-pulse over-amplification and residual pulse leakage. 1. Optical apparatus comprising:a mode-locked laser delivering a first train of pulses at a first pulse-repetition frequency (PRF);at least one transient optical amplifier having a solid-state gain-element optically pumped by radiation output from a diode-laser array for energizing the gain-element, the diode laser array having selectively variable output power;a multi-pass optical amplifier;an optical shutter arranged to select pulses from the first train thereof to provide a second train of pulses at a second PRF less than the first PRF, provide the selected pulses to the multi-pass amplifier to be amplified, receive a corresponding train of amplified pulses from the multi-pass amplifier and selectively transmit a plurality of pulses from the train of amplified pulses to the transient optical amplifier for further amplification, with pulses in the plurality thereof having about equal amplitude;wherein the diode-laser array power is set at a first level when amplified pulses are not being received to maintain about constant thermal lensing in the gain-element, set at a second level lower than the first level for a predetermined first ...

EMISSION SOURCE AND METHOD OF FORMING THE SAME

In various embodiments, an emission source may be provided. The emission source may also include a gain medium including a halide semiconductor material. The emission source may further include a pump source configured to provide energy to the gain medium. 1. A emission source comprising:a gain medium comprising a halide semiconductor material; anda pump source configured to provide energy to the gain medium.2. The emission source according to claim 1 ,wherein the pump source is an optical source configured to provide light as energy to the gain medium.3. The emission source according to claim 1 ,wherein the pump source is an electrical source configured to provide electrical energy to the gain medium.4. The emission source according to claim 1 , the emission source further comprising:a resonant cavity, the gain medium arranged within the resonant cavity;wherein the resonant cavity is defined by a first reflective structure and a second reflective structure, the gain medium arranged between the first reflective structure and the second reflective structure along an optical axis.5. The emission source according to claim 4 ,wherein the first reflective structure is arranged to reflect light incident on the first reflective structure towards the second reflective structure along the optical axis and the second reflective structure is arranged to reflect light incident on the second reflective surface towards the first reflective surface along the optical axis.6. The emission source according to claim 4 ,wherein the first reflective structure is partially transparent so that light incident in the first reflective structure is partially transmitted through the first reflective structure and partially reflected towards the second reflective structure along the optical axis.7. The emission source according to claim 1 ,wherein the halide semiconductor material comprises an organic ammonium cation.8. The emission source according to claim 7 ,{'sub': n', '2n+1', '3, 'sup': ...

DRIVER SYSTEM FOR SEMICONDUCTOR LASER EXCITED SOLID-STATE LASER

The switching power source circuit () for the solid-state laser () excited by a semiconductor laser () uses a higher switching frequency than the relaxation oscillation (f) of the solid-state laser so that the optical noises due to the switching noises or ripples in the output voltage of the switching power source circuit can be minimized. When the voltage drop caused by a semiconductor power device (Q) is forwarded to a feedback terminal () of the switching power source circuit, even when the forward voltage of the semiconductor laser should vary, the output voltage of the switching power source circuit can be regulated to a value suitable for the driving of the semiconductor laser, and the heat generation from the semiconductor power device can be minimized. 1. A driver system for a solid-state laser excited by a semiconductor laser , comprising:a switching power source circuit for converting externally supplied electric power of a certain voltage into DC power of a prescribed voltage; anda semiconductor laser driver circuit powered by the switching power source circuit for driving the semiconductor laser for exciting the solid-state laser;wherein the switching power source circuit uses a switching frequency at least twice a relaxation oscillation frequency of the solid-state laser.2. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching frequency of the switching power source circuit is at least ten times of the relaxation oscillation frequency of the solid-state laser.3. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching frequency of the switching power source circuit is 2 MHz or higher.4. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching power source circuit is provided with a feedback input terminal for output voltage control thereof claim 1 , and ...

LONG-LIFE, HIGH-EFFICIENCY LASER APPARATUS HAVING PLURALITY OF LASER DIODE MODULES

A laser apparatus includes laser diode module groups (LDMGs) and power supply units and provides a laser light source by collecting laser beam from the LDMGs, and comprises: a driving current supply circuit network for injecting the driving currents into the respective LDMGs, independently; a control unit which controls the driving currents independently; a first recording unit in which are recorded data representing a relationship between the driving current and optical output power, and data representing a relationship between the driving current and drive voltage; and a first calculating unit which calculates the driving currents to be allocated to the LDMGs so as to achieve maximum electrical to optical conversion efficiency, wherein the control unit allocates the driving currents to the LDMGs in accordance with the results calculated by the first calculating unit so that the LDMGs as a whole can achieve maximum electrical to optical conversion efficiency under conditions. 1. A laser apparatus which includes a plurality of laser diode module groups each containing at least one laser diode module , and a plurality of power supply units each for supplying a driving current to a corresponding one of the plurality of laser diode module groups , and which provides a laser light source or a pumping light source for laser oscillation by collecting laser beam from the plurality of laser diode module groups , the laser apparatus comprising:a driving current supply circuit network which is capable of injecting the driving currents from the plurality of power supply units into the plurality of respective laser diode module groups, independently for each of the plurality of laser diode module groups;a control unit which controls the driving currents to be injected from the plurality of power supply units into the plurality of respective laser diode module groups, independently for each of the plurality of laser diode module groups;a first recording unit in which are ...

STABILIZED DIODE LASER

A stabilized diode laser device is disclosed, which includes a unibody mounting plate that is mated mechanically to a thermoelectric cooler. The unibody mounting plate comprises chambers in which components, including a laser diode, are aligned and secured. A combination of the secured components within the unibody mounting plate, along with the thermoelectric cooler, provides stabilization of the laser diode. 1. A stabilized diode laser device comprising: a laser diode that is controlled to emit an output comprising light;', 'a collimating lens; and', 'a volume Bragg grating;, 'a housing containing a set of components, comprisingwherein:the laser diode, collimating lens, and volume Bragg grating are optically aligned such that the collimating lens causes an axis of light emitted by the laser diode to diverge at a controlled angle so that light that reaches the volume Bragg grating is spatially extended to match the laser diode;the volume Bragg grating is positioned to reflect a fraction of the light emitted by the laser diode over a narrow spectral range that interacts with the laser diode and stabilizes a laser diode output to match a reflection spectrum of the volume Bragg grating; andthe emitted output of the laser diode lases over a rectangular surface.3. The stabilized diode laser device of claim 1 , wherein the volume Bragg grating is optically aligned with the laser diode to reduce the laser diode spectral width by an order of magnitude of at least two.4. The stabilized diode laser device of claim 1 , wherein the collimating lens is a spherical lens.5. The stabilized diode laser device of claim 1 , wherein the housing comprises a stack up of single-axis translation and rotation stages associated with the set of components; 'a clamp that holds each component of the set of components in position.', 'further comprising6. The stabilized diode laser device of claim 5 , wherein the stack up of single-axis translation and rotation stages comprise five additional ...

TUNABLE LASER USING III-V GAIN MATERIALS

Disclosed herein are techniques, methods, structures and apparatus that provide a laser monolithically integrated in a silicon photonic integrated circuit (PIC) that is suitable for high-performance coherent fiber-optic telecommunications and other applications. Among the features of a laser according to the present disclosure, and in particular a hybrid InGaAsP/Si laser, is an integrated Si isolator to protect the laser from back reflections; optical, rather than electrical pumping; and coupling the optical pump using an InGaAsP grating coupler that acts simultaneously as a WDM coupler and laser mirror. 1. A optically pumped , III-V silicon laser comprising:a laser element having a gain medium disposed within a laser cavity that generates laser light in response to pump light;a grating coupler for coupling the pump light emitted by a pump laser to the laser element;wherein said grating coupler operates as a laser cavity mirror and pump coupler.2. The laser according to further comprising a silicon optical isolator.3. The laser according to wherein the grating coupler includes a first-order Bragg grating at an end opposite a laser output.4. The laser according to wherein the pump laser operates to pump a section of an erbium fiber amplifier.5. The laser according to which is not actively cooled during laser operation.6. The laser according to further comprising a silicon transceiver photonic integrated circuit to which the laser is coupled.7. The laser according to wherein the pump laser is configured to pump two or more lasers simultaneously.8. The laser according to further comprising a III-V waveguide that vertically couples the laser element to a silicon ring resonator. This application claims the benefit of U.S. Provisional Patent Application Ser. No. 61/638,660 filed Apr. 26, 2012 which is incorporated by reference in its entirety as if set forth at length herein.This disclosure relates generally to the field of optical communications and in particular to ...

HORIZONTAL EXTERNAL-CAVITY LASER GEOMETRY

An optoelectronic device includes a semiconductor substrate and a vertical-cavity surface-emitting laser (VCSEL) light source formed on the substrate and configured to emit coherent light at a predefined wavelength along a beam axis perpendicular to a surface of the substrate. A block of a transparent material is mounted on the surface of the substrate and forms, with the VCSEL, a resonant cavity at the predefined wavelength having an entrance face that is aligned with the beam axis and an exit face that is laterally displaced with respect to the entrance face along a cavity axis running parallel to the surface of the substrate. 1. An optoelectronic device , comprising:a semiconductor substrate;a vertical-cavity surface-emitting laser (VCSEL) light source formed on the substrate and configured to emit coherent light at a predefined wavelength along a beam axis perpendicular to a surface of the substrate; anda block of a transparent material comprising opposing first and second sides that are parallel to the surface of the substrate, such that the first side is adjacent to and mounted on the surface of the substrate, and the block of the transparent material forms, with the VCSEL, a resonant cavity at the predefined wavelength having an entrance face on the first side of the block of the transparent material that is aligned with the beam axis and an exit face on the second side of the block of the transparent material that is laterally displaced with respect to the entrance face along a cavity axis running between the first and second sides of the block of the transparent material in a direction parallel to the surface of the substrate.2. (canceled)3. The optoelectronic device of claim 1 , wherein the block of the transparent material comprises third and fourth sides claim 1 , not parallel to the first and second sides claim 1 , wherein the third side is configured to receive the emitted light through the entrance face and to reflect the received light along the ...

EXTERNAL RESONATOR TYPE LASER DEVICE

An external resonator type laser device has an optical element that forms an external resonator with a semiconductor device by selecting and reflecting light of a specific wavelength range from light outputted from the semiconductor device; a supporting member formed of a material having a larger coefficient of linear expansion than the optical element; and a first mount interposed between the optical element and the supporting member, formed of a material having a coefficient of linear expansion closer to that of the optical element compared with that of the supporting member. The optical element is adhered to the first mount. The first mount is adhered to the supporting member by an adhesive having a Shore hardness of less than or equal to 65. 1. An external resonator type laser device comprising:an optical element that forms an external resonator with a semiconductor device by selecting and reflecting light of a specific wavelength range from light outputted from the semiconductor device;a supporting member formed of a material having a larger coefficient of linear expansion than that of the optical element; anda first mount interposed between the optical element and the supporting member, formed of a material having a coefficient of linear expansion closer to that of the optical element compared with that of the supporting member, whereinthe optical element is adhered to the first mount, andthe first mount is adhered to the supporting member by an adhesive having a Shore hardness of less than or equal to 65.2. The external resonator type laser device according to claim 1 , whereinthe first mount is adhered to the supporting member by a thermosetting adhesive, andthe optical element is adhered to the first mount by a photocurable adhesive.3. The external resonator type laser device according to claim 2 , whereinthe optical element includes:a wavelength selection element that selects and reflects light of the specific wavelength range; anda second mount interposed ...

LIGHT SOURCE DEVICE AND ELECTRONIC DEVICE

A light source device according to an embodiment includes: a first resistor () that is connected to a given potential; a light emitting element () that is connected in series to the first resistor and that is configured to be supplied with a given current and thus emit a given amount of light; a second resistor () that is connected to the given potential; and a first current source () that is connected in series to the second resistor and that is configured to supply a current obtained by adding a current corresponding to an overcurrent to the given current are included, and a first voltage at a first connection part where the first resistor and the light emitting element are connected to each other and a second voltage at a second connection part where the second resistor and the first current source are connected to each other are taken out. 1. A light source device comprising:a first resistor that is connected to a given potential;a light emitting element that is connected in series to the first resistor and that is configured to be supplied with a given current and thus emit a given amount of light;a second resistor that is connected to the given potential; anda first current source that is connected in series to the second resistor and that is configured to supply a current obtained by adding a current corresponding to an overcurrent to the given current,wherein a first voltage at a first connection part where the first resistor and the light emitting element are connected to each other and a second voltage at a second connection part where the second resistor and the first current source are connected to each other are taken out.2. The light source device according to claim 1 , wherein the light emitting element is configured as an element array on which a plurality of elements configured to emit light independently are arrayed claim 1 , andthe first current source supplies the given current corresponding in number to elements that are caused to emit light ...

OPTICAL CONNECTOR AND POWER SOURCING EQUIPMENT OF POWER OVER FIBER SYSTEM, AND POWER OVER FIBER SYSTEM

An optical connector of a power over fiber system includes a shutter. The shutter opens in conjunction with a connection operation to enable the connection and closes in conjunction with a disconnection operation to block feed light from exiting. A light receiving surface of the shutter is made of a wavelength conversion material. The light receiving surface receives the feed light when the shutter is closed. The optical connector is disposed at a feed-light output end in the power over fiber system. 17-. (canceled)8. An optical connector of a power over fiber system , comprising a shutter that opens in conjunction with a connection operation to enable the connection and closes in conjunction with a disconnection operation to block feed light from exiting ,wherein a light receiving surface of the shutter, the light receiving surface receiving the feed light when the shutter is closed, is made of a wavelength conversion material, andwherein the optical connector is disposed at a feed-light output end in the power over fiber system.9. A power sourcing equipment of a power over fiber system , comprising:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, 'the optical connector according to at the feed-light output end; and'}a semiconductor laser that oscillates with electric power, thereby outputting the feed light,wherein a semiconductor material of a semiconductor region of the semiconductor laser, the semiconductor region exhibiting a light-electricity conversion effect, is a laser medium having a laser wavelength of 500 nm or less.10. A power sourcing equipment of a power over fiber system comprising:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, '(i) an optical connector including a shutter that opens in conjunction with a connection operation to enable the connection and closes in conjunction with a disconnection operation to block feed light from exiting, wherein a light receiving surface of the shutter, the light receiving surface receiving the feed light when ...

POWER OVER FIBER SYSTEM

A power over fiber system includes a power sourcing equipment, a powered device, an extender, and first and second optical fiber cables. The power sourcing equipment outputs feed light. The extender extends a laser wavelength of the feed light. The first optical fiber cable transmits the feed light from the power sourcing equipment to the extender. The second optical fiber cable transmits the feed light from the extender to the powered device. Based on a loss-to-transmission-length characteristic of the laser wavelength before extended by the extender and a loss-to-transmission-length characteristic of the laser wavelength after extended by the extender, the first optical fiber cable has a length that is equal to or shorter than a transmission length where a loss due to the laser wavelength before extended by the extender is equal to a loss due to the laser wavelength after extended by the extender. 1. A power over fiber system comprising:a power sourcing equipment including a semiconductor laser that oscillates with electric power, thereby outputting feed light;a powered device including a photoelectric conversion element that converts the feed light into electric power;an extender that extends a laser wavelength of the feed light;a first optical fiber cable that transmits the feed light from the power sourcing equipment to the extender; anda second optical fiber cable that transmits the feed light from the extender to the powered device,wherein based on a loss-to-transmission-length characteristic of the laser wavelength before extended by the extender and a loss-to-transmission-length characteristic of the laser wavelength after extended by the extender, the first optical fiber cable has a length that is equal to or shorter than a transmission length where a loss due to the laser wavelength before extended by the extender is equal to a loss due to the laser wavelength after extended by the extender.2. The power over fiber system according to claim 1 , wherein the ...

APPARATUS

A driver circuit is configured to pass a current. The circuit includes a first transistor connected in series with the laser diode, and configured to regulate the current. A voltage regulator is configured to provide an input to a gate of the first transistor so as to regulate the current in dependence upon a regulator input and a feedback input at the voltage regulator. 1. A driver circuit for a laser diode configured to pass a current , the driver circuit comprising:a first transistor connected in series with the laser diode, the first transistor being configured to regulate the current; anda voltage regulator configured to provide an input to a gate of the first transistor so as to regulate the current in dependence upon a regulator input and a feedback input at the voltage regulator.2. The driver circuit as claimed in claim 1 , wherein the voltage regulator comprises an operational amplifier.3. The driver circuit as claimed in claim 2 , wherein the regulator input of the operational amplifier is an inverting input claim 2 , and the feedback input of the operational amplifier is a non-inverting input.4. The driver circuit as claimed in claim 1 , further comprising a digital to analog converter configured to output an analog signal to the regulator input of the voltage regulator claim 1 , wherein the analog signal is based on a digital representation of a laser diode output level.5. The driver circuit as claimed in claim 4 , wherein the digital representation of a laser diode output level comprises a digital representation of a continuous wave laser output.6. The driver circuit as claimed in claim 4 , wherein the digital representation of a laser diode output level comprises a pulsed mode laser output.7. The driver circuit as claimed in claim 1 , further comprisinga shunt path arranged in parallel to the laser diode, the shunt path comprising a second transistor configured to regulate a current in the shunt path in dependence upon an input provided by the voltage ...

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER

A distributed feedback semiconductor laser of includes a semiconductor stacked body and a first electrode. The semiconductor stacked body includes a first layer, an active layer that is provided on the first layer and is configured to emit laser light by an intersubband optical transition, and a second layer that is provided on the active layer. The semiconductor stacked body has a first surface including a flat portion and a trench portion; the flat portion includes a front surface of the second layer; the trench portion reaches the first layer from the front surface; the flat portion includes a first region and a second region; the first region extends along a first straight line; the second region extends to be orthogonal to the first straight line; and the trench portion and the second region outside the first region form a diffraction grating having a prescribed pitch along the first straight line. The first electrode is provided in the first region. 1. A distributed feedback semiconductor laser , comprising:a semiconductor stacked body including a first layer, an active layer, and a second layer, the active layer being provided on the first layer and being configured to emit laser light by an intersubband optical transition, the second layer being provided on the active layer; anda first electrode,the semiconductor stacked body having a first surface including a flat portion and a trench portion, the flat portion including a front surface of the second layer, the trench portion reaching the first layer from the front surface, the flat portion including a first region and a second region, the first region extending along a first straight line, the second region extending to be orthogonal to the first straight line, the trench portion and the second region outside the first region forming a diffraction grating having a prescribed pitch along the first straight line, andthe first electrode being provided in the first region.2. The distributed feedback ...

FREQUENCY STABILIZED COHERENT BRILLOUIN RANDOM FIBER LASER

A high-finesse Fabry-Perot interferometer (FPI) is introduced into a coherent Brillouin RFL configuration to thereby produce a frequency stabilized random laser. 1. An apparatus comprising:a pump laser,a stimulated Brillouin scattering (SBS) gain fiber for producing stimulated Brillouin Stokes light,a Rayleigh scattering (RS) feedback fiber,a Fabry-Perot interferometer (FPI),wherein the apparatus produces a random laser output from the stimulated Brillouin Stokes light,wherein in the SBS and RS form a coherent Brillouin RFL configuration,wherein the Fabry-Perot interferometer (FPI) is optically connected to the coherent Brillouin RFL configuration, andwherein the Fabry-Perot interferometer (FPI) is configured to frequency stabilize the random laser output by optically interacting with the coherent Brillouin RFL configuration.2. The apparatus of claim 1 , wherein the pump laser has a linewidth of 500 kHz.3. The apparatus of claim 1 , wherein the SBS gain fiber has a length of 2 to 25 km.4. The apparatus of claim 1 , wherein the random laser output has a power of 2.5 to 20 mW.5. The apparatus of claim 1 , wherein the pump laser is a frequency stabilized semiconductor laser (FSSL).6. The apparatus of claim 5 , wherein said FSSL has a linewidth of 500 kHz. This application claims benefit of priority to U.S. Provisional Patent Application No. 61/880,646, filed Sep. 20, 2013 which is incorporated by reference in its entirety.1. Field of the InventionThe present invention relates to random fiber lasers. (RFLs).2. Related ArtDespite its unique characteristics and lasing mechanisms, the field of random fiber lasers (RFLs), which is based on multiple optical scattering in a disordered gain medium, remains young with few realized applications. This is largely due to the lack of lasing directionality which creates difficulty in achieving a stable, high-quality laser in bulk materials.According one broad aspect, the present invention provides an apparatus comprising: a pump ...

Laser Oscillation Device

A laser oscillation device comprises a light emitting unit for projecting a pump laser beam, a laser medium for absorbing the pump laser beam and for emitting a spontaneous emission light, a saturable absorber for absorbing the spontaneous emission light and for emitting a pulsed light, and a holder for holding the laser medium in a close contact state, wherein a portion of the holder as appressed against at least one surface of the laser medium is made of a metal and the pump laser beam is projected to an edge portion of the laser medium as appressed against the holder.

NONEQUILIBRIUM PULSED FEMTOSECOND SEMICONDUCTOR DISK LASER

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, separated along the optical axis by a sub-wavelength distance. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking. 2. A laser system according to claim 1 , wherein the first MQW unit is positioned asymmetrically between the first and second immediately neighboring nodes.3. A laser system according to claim 1 , further comprising a mode-lock element disposed in the optical resonator in optical communication with the laser chip and configured to define mode-locked pulses of optical radiation inside said optical resonator when said energy is pumped to the laser chip.4. A laser system according to claim 3 , wherein the mode-lock element comprises at least one of a semiconductor saturable absorber mirror element claim 3 , a self-phase modulation Kerr lens element claim 3 , and an active modulation element.5. A laser system according to claim 1 , wherein the first distance is a sub-wavelength distance that is shorter than the first wavelength claim 1 , said laser system being configured to define durations claim 1 , of said mode-locked pulses claim 1 , each of which is shorter that one hundred femtoseconds.6. A laser system according to claim 1 ,wherein two neighboring QWs from said at least three first QWs are separated from one another by first confinement barrier material, the ...

CONTINUOUS-WAVE PUMPED COLLOIDAL NANOCRYSTAL LASER

Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism. 1. Laser device comprising a film of colloidal nanocrystals of semiconductor material as a gain medium , wherein said nanocrystals are two-dimensional nanocrystals forming quantum wells for confinement of charge carriers in the nanocrystals and having a biexciton gain mechanism , the device being characterized in that said nanocrystals are adapted to provide strong confinement of the charge carriers in a thickness direction (z) of the nanocrystal and weak or no confinement of the charge carriers in each of two mutually orthogonal lateral directions (x , y) of the nanocrystal , orthogonal to the thickness direction (z).2. Device according to claim 1 , wherein the nanocrystals have a thickness comprised in the range of 1-5 nm.3. Device according to claim 1 , wherein the nanocrystals have a core/shell structure comprising a core part and a shell part of different semiconductor materials claim 1 , wherein the core part has a thickness comprised in the range of 1-5 nm.4. Device according to claim 1 , wherein the nanocrystals are of semiconductor selected from the group consisting of selenides claim 1 , sulphides and tellurides of elements of groups I claim 1 , II claim 1 , III claim 1 , IV and V claim 1 , and their core/shell structures.5. Device according to claim 4 , wherein the nanocrystals further contain atomic dopants in a concentration of less than 10%.6. Device according to claim 1 , wherein the film of colloidal two-dimensional nanocrystals is arranged in a resonant cavity having a photonic gap which overlaps the emission peak of the colloidal two-dimensional nanocrystals.7. Device according to claim 1 , further comprising a continuous-wave optical ...

OPTICALLY PUMPED VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING LASER DEVICE

The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL () and several pump laser diodes (). The pump laser diodes () are arranged to optically pump the active region () of the VECSEL () by reflection of pump radiation () at a mirror element (). The mirror element () is arranged on the optical axis () of the VECSEL () and is designed to concentrate the pump radiation () in the active region () and to form at the same time the external mirror of the VECSEL (). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device. 2. The device according to claim 1 ,wherein said pump laser diodes are vertical cavity surface emitting lasers.3. The device according to claim 1 ,wherein said pump laser diodes are formed on a first chip and said layer stack of the vertical external-cavity surface-emitting laser is formed on a second chip, said first and second chip being mounted on a common submount or heat sink.4. The device according to claim 2 ,wherein said vertical cavity surface emitting lasers and said layer stack of the vertical external-cavity surface-emitting laser are formed on the same chip.5. The device according to claim 4 ,wherein said vertical cavity surface emitting lasers and said layer stack of the vertical external-cavity surface-emitting laser originate from the same layer sequence on the chip.6. The device according to claim 5 ,wherein said layer sequence comprises a first sequence of layers forming a layer structure of the vertical cavity surface emitting lasers and a second sequence of layers forming a layer structure of the layer stack of the vertical external-cavity surface-emitting laser, said first and second sequence of layers being separated by an etch stop layer.7. The device according to claim 1 ,wherein said mirror element comprises a central region which forms ...

GENERATION OF HIGH-POWER SPATIALLY-RESTRUCTURABLE SPECTRALLY-TUNABLE BEAMS IN A MULTI-ARM-CAVITY VECSEL-BASED LASER SYSTEM

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution. 1. A laser source comprising:a laser cavity network including first and second spatially-distinct cavity arms and a collinear portion, wherein the first and second spatially-distinct cavity arms share the collinear portion, a corresponding gain medium that includes one of (i) a VECSEL-based laser gain medium, (ii) a solid-state gain medium, and (iii) a fiber amplifier and that is configured to provide amplification of light at a corresponding wavelength;', 'and', 'at least one of a first optical system, disposed across an axis of the at least one of the first and second cavity arms to either refract or reflect light incident thereon while transforming a transverse distribution of said light that has traversed it, and', 'a second optical system, disposed across said axis between the corresponding gain medium and the collinear portion and characterized by optical losses at the corresponding wavelength;, 'at least one of the first and second cavity arms containing, intracavity,'} a first transverse mode distribution in a first portion of the laser cavity network between the corresponding gain medium and the second optical system,', 'a second transverse mode distribution in a second portion of the laser cavity network between the second optical system and the collinear portion, and', 'a third transverse mode distribution in a ...

VARIABLE CONFINEMENT HYBRID OSCILLATOR POWER AMPLIFIER

Described herein is a two chip photonic device (e.g., a hybrid master oscillator power amplifier (MOPA)) where a gain region and optical amplifier region are formed on a III-V chip and a variable reflector (which in combination with the gain region forms a laser cavity) is formed on a different semiconductor chip that includes silicon, silicon nitride, lithium niobate, or the like. Sides of the two chips are disposed in a facing relationship so that optical signals can transfer between the gain region, the variable reflector, and the optical amplifier. 1. A photonic device , comprising: a gain region configured to generate an optical signal;', 'an optical amplifier configured to amplify the optical signal;, 'a III-V semiconductor chip comprisinga substrate separate from the III-V semiconductor, the substrate comprising a variable reflector, wherein an input of the variable reflector is optically coupled to an output of the gain region and an output of the variable reflector is optically coupled to an input of the optical amplifier.2. The photonic device of claim 1 , further comprising a high reflective (HR) element disposed at a first end of the gain region that is opposite a second end of the gain region that is optically coupled to the variable reflector.3. The photonic device of claim 2 , wherein the HR element claim 2 , the gain region claim 2 , and the variable reflector form a cavity for a laser.4. The photonic device of claim 1 , wherein the output of the gain region and the input of the optical amplifier are optically coupled to a same facet of the III-V semiconductor chip claim 1 , and wherein the input and the output of the variable reflector are coupled to a same facet of the substrate.5. The photonic device of claim 1 , further comprising:a first supermode filtering waveguide (SFW) disposed in the gain region; anda second SFW disposed in the optical amplifier, wherein the first and second SFWs comprises a first optical waveguide formed in a ridge that is ...

HYBRID SILICON LASERS AND AMPLIFIERS WITH 2D PHOSPHORENE FILM

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices. 1. A photonic device comprising:a substrate formed of a semiconductor material, the substrate having a resonator cavity formed therein, the substrate having a mounting surface; anda two dimensional material disposed on the mounting surface of the substrate and extending over the resonator cavity, the two dimensional material being formed of one or more atomic layers of phosphorene, wherein the two dimensional material is configured to provide a photonic gain region for photons propagating in the resonator cavity of the substrate, such that upon external pumping the two dimensional material produces a photon emission.2. The photonic device of claim 1 , wherein the substrate is a Silicon substrate.3. The photonic device of claim 2 , wherein the resonator cavity is a photonic crystal resonator formed in the Silicon substrate.4. The photonic device of claim 2 , wherein the resonator cavity is a distributed Bragg reflector resonator formed in the Silicon substrate.5. The photonic device of claim 2 , wherein the resonator cavity is a distributed feedback laser resonator formed in the Silicon substrate.6. The photonic device of claim 1 , wherein the two dimensional material comprises at least 1 atomic layer of phosphorene (BP).7. The photonic device of claim 6 , wherein the two dimensional material comprises 2-10 atomic layers of phosphorene (BP).8. The photonic device of claim 6 , wherein the two dimensional material comprises 10-100 atomic layers of phosphorene (BP).9. The photonic device of claim 6 , wherein the two dimensional material comprises 10-500 atomic layers of phosphorene (BP).10. ...

TUNABLE LASER FOR COHERENT TRANSMISSION SYSTEM

A tunable laser device is described. In one example, the tunable laser device includes an adaptive ring mirror, a gain waveguide, a loop mirror waveguide, and a booster amplifier waveguide. The gain waveguide and the boost amplifier waveguide can be formed in a semiconductor optical amplifier (SOA) region of the tunable laser device, and the adaptive ring mirror and the loop mirror waveguide can be formed in a silicon photonics region of the tunable laser device. The adaptive ring mirror includes a phase shifter optically coupled between a number of MMI couplers. By inducing a phase shift using the phase shifter, the wavelength of the output of the tunable laser device can be altered or adjusted for use in coherent fiber-optic communications, for example, among other applications. 1. A tunable laser device , comprising:an adaptive ring mirror;a gain waveguide optically coupled to the adaptive ring mirror;a loop mirror optically coupled to the gain waveguide; anda booster amplifier optically coupled to the loop mirror at one end and adapted to provide a laser output of the tunable laser device at another end, wherein:the gain waveguide and the boost amplifier are formed in a semiconductor optical amplifier (SOA) region of the tunable laser device; andthe adaptive ring mirror and the loop mirror are formed in a silicon photonics region of the tunable laser device.2. The tunable laser device of claim 1 , wherein the adaptive ring mirror comprises:a number of multimode interference (MMI) couplers each comprising a single input, double output MMI coupler, wherein:a first output of a first MMI coupler among the MMI couplers is optically coupled to an input of a second MMI coupler among the MMI couplers; anda second output of the first MMI coupler is optically coupled to an input of a third MMI coupler among the MMI couplers.3. The tunable laser device of claim 2 , wherein the adaptive ring mirror further comprises:a number of linear waveguides optically coupled to outputs ...

EXTERNAL CAVITY TYPE TUNABLE WAVELENGTH LASER MODULE FOR TO-CAN PACKAGING

Provided is a tunable wavelength laser module including: an external cavity type light source generating broadband light; an optical waveguide; a Bragg grating formed in the optical waveguide; a heater provided above the optical waveguide in which the Bragg grating is formed and adjusting a reflection band of the Bragg grating by a thermo-optic effect; a direction change waveguide region changing direction of optical signals obtained by the adjusted reflection band of the Bragg grating, by a predetermined angle; a -degree reflection part transmitting some of the optical signals direction-changed by the direction change waveguide region and escaping from the optical waveguide therethrough and reflecting the others of the optical signals in a vertical upward direction thereby; and a lens making the optical signals reflected in the vertical upward direction by the -degree reflection part collimated light or convergent light. 1. An external cavity type tunable wavelength laser module comprising:an external cavity type light source generating broadband light;an optical waveguide to which the broadband light output from the light source is input;a Bragg grating formed in the optical waveguide;a heater provided above the optical waveguide in which the Bragg grating is formed and adjusting a reflection band of the Bragg grating by a thermo-optic effect;a direction change waveguide region changing direction of optical signals obtained by the adjusted reflection band of the Bragg grating, by a predetermined angle, to output direction-changed optical signals;a 45-degree reflection part transmitting some of the direction-changed optical signals escaping from the optical waveguide therethrough and reflecting a remainder of the direction-changed optical signals in a vertical upward direction thereby; anda lens making the direction-changed optical signals reflected in the vertical upward direction by the 45-degree reflection part collimated light or convergent light.2. The ...

EXTERNAL-RESONATOR-TYPE LIGHT-EMITTING DEVICE

An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face on which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. 1. An external resonator type light-emitting device comprising a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with said light source:wherein said light source comprises an active layer oscillating said semiconductor laser light; andwherein said grating element comprises an optical waveguide and a plurality of Bragg gratings formed in said optical waveguide,said optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted,2. The device of claim 1 ,wherein said Bragg gratings have wavelength regions, respectively, in which reflectances of said Bragg gratings are higher than a reflectance at an emitting end of said light source, respectively; andwherein said wavelength regions of said Bragg gratings having central wavelengths adjacent to each other are continuous.3. The device of claim 2 ,wherein said reflectances of said Bragg gratings having said central wavelengths adjacent to each other are equal to each other at predetermined wavelengths, respectively, andwherein a minimum value of a grating reflectance necessary for laser oscillation in an external resonator mode is not less than said reflectance at said emitting end of said light source, and is not more than each of said reflectances of ...

EXTERNAL-RESONATOR-TYPE LIGHT-EMITTING DEVICE

An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating said semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face to which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. A half value reflectance Ris larger than a reflectance Rat an emitting end of the light source. A half value reflectance Ris 3% or larger. A combined reflectance is not less than the half value reflectance Rin a wavelength region Δλ. The wavelength region Δλis continuous over 10 nm or more and 30 nm or less, provided that a half value reflectance is defined as 50 percent of a maximum value Rmax of the combined reflectance of the Bragg gratings. 1. An external resonator type light-emitting device comprising a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with said light source:wherein said light source comprises an active layer oscillating said semiconductor laser light;wherein said grating element comprises an optical waveguide and a plurality of Bragg gratings formed in said optical waveguide, said optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted, and said Bragg gratings having periods different from each other;{'sub': 50', '2, 'wherein a half value reflectance Ris larger than a reflectance Rat an emitting end of said light source;'}{'sub': '50', 'wherein said half value reflectance Ris 3% or larger; and'}{'sub': 50', '50', '50', '50, 'wherein a combined reflectance of said ...

Current self-checking regulation circuit based on voltage calibration

This invention provides a current self-checking regulation circuit based on voltage calibration including a bandgap reference unit, a self-calibration unit, a detection and regulation unit, current mirror units, and a current mirror control unit. The bandgap reference unit is configured to generate a voltage signal, the self-calibration unit is configured to respond to a digital signal of the detection and regulation unit and calibrate the voltage signal of the bandgap reference unit. The detection and regulation unit samples the reference current signal and a mirror current signal of the regulation group current mirror unit and generate a digital control signal according to the reference current signal. and the reference group current mirror unit responds to the digital control signal and outputs a regulated bias current signal meeting needs of the laser driver. 1. A current self-checking regulation circuit based on voltage calibration , comprising a bandgap reference unit , a self-calibration unit , a detection and regulation unit , current mirror units , and a current mirror control unit , wherein the number of the current mirror units is at least two , one of the current mirror units is a reference group current mirror unit , the rest of the current mirror units is at least one regulation group current mirror unit , the detection and regulation unit is coupled with the bandgap reference unit , the reference group current mirror unit , the regulation group current mirror unit , and the current mirror control unit , the bandgap reference unit is coupled with the self-calibration unit , the reference group current mirror unit is coupled with the self-calibration unit , the regulation group current mirror unit is coupled with the current mirror control unit , the current mirror control unit is coupled with a laser driver , and the detection and regulation unit is coupled with the reference group current mirror unit , the regulation group current mirror unit , the ...

LASER APPARATUS AND INFORMATION ACQUISITION APPARATUS USING THE SAME

A laser apparatus includes an active medium, a first reflection portion, a second reflection portion, a first laser array including a plurality of semiconductor lasers, a third reflection portion configured to reflect at least part of light emitted from the first laser array and transmitted through the active medium, and a fourth reflection portion configured to transmit at least part of light emitted from the first laser array, and to reflect at least part of light reflected by the third reflection portion and transmitted through the active medium. The fourth reflection portion is disposed across the plurality of semiconductor lasers including respective light-emitting regions of the plurality of semiconductor lasers of the first laser array. 1. A laser apparatus comprising:an active medium;a resonance unit including a first reflection portion and a second reflection portion which are configured to resonate light emitted from the active medium;a first laser array including a plurality of semiconductor lasers configured to emit light for exciting the active medium from a direction different from a resonance direction of the resonance unit;a third reflection portion configured to reflect at least part of light emitted from the first laser array and transmitted through the active medium; anda fourth reflection portion disposed between the active medium and the first laser array and configured to transmit at least part of light emitted from the first laser array, and to reflect at least part of light reflected by the third reflection portion and transmitted through the active medium,wherein the fourth reflection portion is disposed across the plurality of semiconductor lasers including respective light-emitting regions of the plurality of semiconductor lasers of the first laser array.2. The laser apparatus according to claim 1 , wherein the fourth reflection portion constitutes a part of the semiconductor lasers of the first laser array.3. The laser apparatus according ...

Laser Package with High Precision Lens

The present disclosure relates to optical systems and methods for their manufacture. An example method includes coupling a first surface of a light-emitter substrate to a reference surface of a carrier substrate. The method also includes registering a mold structure with respect to the reference surface of the carrier substrate. Furthermore, the method includes using the mold structure to form an optical material over at least a portion of the light-emitter substrate. The optical material is shaped according to a shape of the mold structure and includes at least one registration feature. The method also includes coupling an optical lens element to the optical material such that the optical lens element is registered to the at least one registration feature. 1. A method of manufacturing , the method comprising:coupling a first surface of a light-emitter substrate to a reference surface of a carrier substrate;registering a mold structure with respect to the reference surface of the carrier substrate;forming an optical material over at least a portion of the light-emitter substrate using the mold structure registered with respect to the reference surface, wherein the optical material is shaped according to a shape of the mold structure, and wherein the optical material comprises at least one registration feature; andcoupling an optical lens element to the optical material such that the optical lens element is registered to the at least one registration feature.2. The method of claim 1 , wherein coupling the first surface of the light-emitter substrate to the reference surface of the carrier substrate comprises at least one of: wire bonding claim 1 , bump bonding claim 1 , or application of a conductive adhesive.3. The method of claim 1 , wherein the light-emitter substrate comprises at least one laser diode junction.4. The method of claim 3 , wherein the at least one laser diode junction is located at a known distance from the first surface.5. The method of claim 3 , ...

Semiconductor Laser Diode

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another. 115-. (canceled)16. A semiconductor laser diode comprising:a semiconductor layer sequence comprising an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane; anda continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region,wherein the first and second contact regions adjoin one another, andwherein the first contact material and the second contact material form a continuous contact layer on which a bonding layer is located and/ ...

LASER DEVICE ON THE BASIS OF A PHOTONIC CRYSTAL HAVING PILLAR-SHAPED OR WALL-SHAPED SEMICONDUCTOR ELEMENTS, AND METHODS FOR THE OPERATION AND PRODUCTION THEREOF

The invention relates to a laser device () comprising a substrate (), on the surface of which an optical waveguide () is arranged, which has an optical resonator () with such a resonator length that at least one resonator mode forms a stationary wave in the resonator (), and an amplification medium that is arranged on a surface of the optical waveguide (), wherein the amplification medium comprises a photonic crystal () having a plurality of column- and/or wall-shaped semiconductor elements () which are arranged periodically on the surface of the optical waveguide () while protruding from the optical waveguide (), and wherein the photonic crystal () is designed to optically interact with the at least one resonator mode of the optical resonator () and to amplify light having a wavelength of the at least one resonator mode of the optical resonator (). The invention also relates to methods for the operation and production of the laser device. 1. A laser , comprising:a substrate, on a surface of which is arranged an optical waveguide, which includes an optical resonator with a resonator length such that at least one resonator mode in the optical resonator forms a standing wave, andan amplification medium, which is arranged on a surface of the optical waveguide,whereinthe amplification medium comprises a photonic crystal having a plurality of semiconductor elements, which have at least one of a pillar-shape and a wall-shape and which are arranged in a periodic manner, protruding from the optical waveguide, on the surface of the optical waveguide, andthe photonic crystal is configured for an optical interaction with the at least one resonator mode of the optical resonator and for an amplification of light at a wavelength of the at least one resonator mode of the optical resonator.2. The laser device according to claim 1 , whereinthe photonic crystal is arranged on the surface of the optical waveguide, which surface runs parallel to the surface of the substrate, and the ...

THERMO-OPTICALLY TUNABLE LASER SYSTEM

A tunable laser has a solid state laser medium having an optical gain region and generates coherent radiation through a facet. A lens collects the coherent radiation and generates a collimated light beam. Components of an external cavity include a reflective surface and an optical filter, the reflective surface reflecting the collimated beam back to the lens and the laser medium, the optical filter positioned between the reflective surface and the lens and having two surfaces with a thermally tunable optical transmission band within the optical gain region of the laser medium. The optical filter (1) transmits a predominant portion of the collimated beam at a desired wavelength of operation, and (2) specularly reflects a remaining portion of the collimated beam from each surface, the collimated beam being incident on the optical filter such that the reflected collimated beams propagate at a non-zero angle with respect to the incident collimated beam. 2. The tunable laser of claim 1 , wherein the pulse of the laser medium coherent optical signal is created by an electronic pulse with a low duty cycle and optical power of the tunable laser output increases following the pulse.3. The tunable laser of claim 1 , wherein the optical gain region of the solid state laser medium has a wavelength region of lower optical gain interspersed between wavelength regions of higher optical gain.4. The tunable laser of wherein the wavelength selection device is an etalon with a free spectral range and a width of the wavelength region of higher optical gain is less than the free spectral range.5. A method of tuning an external cavity semiconductor laser claim 3 , comprising:(1) setting a first operating condition of a wavelength selection device within the external cavity to select a first optical feedback selection wavelength and a first lasing wavelength of continuous wave laser operation,(2) changing to a second operating condition of the wavelength selection device within the ...

SYSTEMS AND METHODS FOR CONTROLLING LASER PULSING

Techniques are provided for controlling an output laser pulse signal of a medical device. A control device defines a time duration of capacitive discharge to a laser device. The time duration corresponds to an intended energy of the output laser pulse signal. The control device generates a plurality of sub-pulse control signals. The sub-pulse control signals define a series of capacitive discharge events of the capacitor bank. The control device modulates one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration. 1. A method for controlling an output laser pulse signal of a medical device , the method comprising:at a control device, defining a time duration of capacitive discharge of a capacitor bank to a laser device, wherein the time duration corresponds to an intended energy of the output laser pulse signal;generating a plurality of sub-pulse control signals that define a series of capacitive discharge events of the capacitor bank; andmodulating one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration.2. The method of claim 1 , further comprising modifying the time duration of capacitive discharge by modifying the plurality of sub-pulse control signals.3. The method of claim 2 , wherein modifying the time duration comprises modifying the time duration between a start of a first sub-pulse control signal and an end of a last sub-pulse control signal.4. The method of claim 1 , wherein the sub-pulse control signal period corresponds to time elapsed between a start of the first sub-pulse control signal and a start of a subsequent sub-pulse control signal.5. The method of claim 1 , wherein the sub-pulse time duration corresponds to time elapsed between a start of ...

ISOLATOR-FREE LASER

An isolator-free laser includes an etalon, an active section, and a low reflection (LR) mirror. The etalon includes a passive section of the isolator-free laser and a reflection profile. The active section is coupled end to end with the passive section. The active section has a distributed feedback (DFB) grating and a lasing mode at a long wavelength side of a reflection peak of the reflection profile. The LR mirror is formed on a front facet of the passive section. The long wavelength edge of the reflection peak of the reflection profile may have a slope greater than 0.006 GHz. A RIN of the isolator-free laser under −20 decibels (dB) external cavity optical feedback may be less than or equal to −130 dBc/Hz. 1. An isolator-free laser , comprising:an etalon, the etalon comprising a passive section of the isolator-free laser and a reflection profile;{'sup': −1', '−1, 'an active section coupled end to end with the passive section, the active section having a distributed feedback (DFB) grating and a lasing mode at a long wavelength edge of a reflection peak of the reflection profile, the long wavelength edge of the reflection peak of the reflection profile having a slope greater than 0.006 gigahertz(GHz) at the lasing mode; and'}a low reflection (LR) mirror formed on a front facet of the passive section;wherein a relative intensity noise (RIN) of the isolator-free laser under −20 decibels (dB) external cavity optical feedback is less than or equal to −130 dBc/Hz.2. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −10 dB external cavity optical feedback is less than or equal to −130 dBc/Hz.3. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −5 dB external cavity optical feedback is less than or equal to −130 dBc/Hz.4. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −20 dB external cavity optical feedback is less than or equal to −155 dBc/Hz.5. The isolator-free ...

OPTICAL SEMICONDUCTOR MODULE

An optical semiconductor module according to the embodiment includes: a board including a transmission line; a block including a low-permittivity material; an inductor mounted on the block, the inductor being connected with the transmission line via a first wire, the first wire having a first inductance; a semiconductor laser device mounted on the board, the semiconductor laser device being connected with the transmission line via a second wire, the second wire having a second inductance smaller than the first inductance; and 1. An optical semiconductor module comprising:a board including a transmission line;a block including a low-permittivity material;an inductor mounted on the block, the inductor being connected with the transmission line via a first wire, the first wire having a first inductance;a semiconductor laser device mounted on the board, the semiconductor laser device being connected with the transmission line via a second wire, the second wire having a second inductance smaller than the first inductance; anda housing configured to accommodate the board, the block, the inductor, and the semiconductor laser device.2. An optical semiconductor module comprising:a board;a block including a low-permittivity material and a transmission line;an inductor mounted on the block, the inductor being connected with the transmission line via a first wire, the first wire having a first inductance;a semiconductor laser device mounted on the board, the semiconductor laser device being connected with the transmission line via a second wire, the second wire having a second inductance smaller than the first inductance; anda housing configured to accommodate the board, the block, the inductor, and the semiconductor laser device.3. The optical semiconductor module according to claim 1 , wherein the block further has a resistor connected in parallel with the inductor.4. The optical semiconductor module according to claim 1 , further comprising an RC series circuit claim 1 , ...

LASER DIODE ENHANCEMENT DEVICE

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs. 1. The laser of claim 15 , the laser further including a DBR mirror and at least one quantum well in the DBR mirror.2. The laser of claim 1 , including a laser beam output that is back propagated for emitting a large sized Gaussian beam with high encircled energy.3. The laser of claim 1 , wherein the DBR mirror has a plurality of GaAs/AlGaAs layers.4. The laser of wherein the quantum well is composed of AlGaAs/InGaAs.5. The laser of wherein the CGH comprises GaAs/AlGaAs.6. (canceled)7. The laser of wherein there are at least 20 cascaded CGHs.8. The laser of wherein there are more than 20 cascaded CGHs.9. The laser of where each CGH comprises GaAs/AlGaAs.10. (canceled)11. The laser of having a laser gain medium that is semiconductor.12. The laser of having a laser gain medium that is crystal.13. The laser of having a laser gain medium that is gas.14. A vertical cavity surface emitting semiconductor laser claim 15 , with an intra-cavity wavefront shaping device comprising a plurality of CGHs at one end of the cavity claim 15 , with each CGH having a plurality of cascaded layers with a buffer layer between each cascaded layer.15. A vertical cavity surface emitting semiconductor laser claim 15 , comprising a plurality of wavefront shaping devices claim 15 , within a cavity said wavefront shaping devices being diffractive elements consisting of a plurality of interior CGHs at an end of the cavity; said CGHs each having a plurality of cascaded layers with a buffer layer between each layer.16. The device of wherein the diffractive elements comprises 2-20 layers of AlGaAs with buffer layers ...

ADJUSTMENT IMAGE GENERATING DEVICE, ADJUSTMENT IMAGE GENERATING METHOD, AND STORAGE MEDIUM HAVING PROGRAM STORED THEREIN

An adjustment image for facilitating adjustment is generated. An image display device according to an embodiment of the invention includes a semiconductor laser, a wheel, an adjustment image generating unit, and a projection unit. The semiconductor laser emits light. The wheel includes a first area and a second area as areas for adjusting color components of the light emitted from the semiconductor laser. The adjustment image generating unit generates an adjustment image in which a first color formed using a section adjacent to a boundary between the first area and the second area and a second color formed not using the section adjacent to the boundary and having color components close to the first color are arranged adjacent to each other. The projection unit projects the adjustment image generated by the adjustment image generating unit. 2. The adjustment image generating device according to claim 1 , wherein the processor is configured to:select colors which are different by one gradation in color components adjusted in the first area and the second area respectively, as the first color and the second color and generates the adjustment image.3. The adjustment image generating device according to claim 1 , wherein the processor is configured to:generate an adjustment image in which the first color on the first area side using a section on the first area side adjacent to the boundary and the second color on the first area side not using a section on the first area side adjacent to the boundary are arranged as a first color set andthe first color on the second area side using a section on the second area side adjacent to the boundary and the second color on the second area side not using a section on the second area side adjacent to the boundary are arranged as a second color set to be closer to the first color set.4. The adjustment image generating device according to claim 2 , wherein the processor is configured to:generate an adjustment image in which the first ...

LIGHT GUIDING FOR VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER

The present invention relates to an active gain layer stack () for a vertical emitting laser device, the active gain layer stack () comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa () extending in a vertical direction. A transversally neighboring region () that at least partly surrounds said mesa () has a second refractive index (n)—At least part of said mesa () has a first refractive index (n) and a part of the neighboring region () transversally adjacent to said part of the mesa () has second refractive index (n 2)—Said first refractive index (n) is higher than said second refractive index (n) and a diameter in transversal direction of said mesa () is chosen such that a transversal confinement factor in the active gain layer stack () is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa () may be grown on a single substrate (). Anti-guiding is prevented by the lower refractive index of the surrounding material () improving the single transversal mode operation. 1. An active gain layer stack for a vertical emitting laser device , the active gain layer stack comprising a semiconductor material ,wherein the active gain layer stack is structured such that it forms at least one mesa extending in a vertical direction and a transversally neighboring region at least partly surrounding said mesa,{'sub': 1', '2', '1', '2, 'wherein at least part of said mesa has a first refractive index (n) and wherein a part of the neighboring region transversally adjacent to said part of the mesa has a second refractive index (n), wherein said first refractive index (n) is higher than said second refractive index (n), and'}{'sub': '1', 'wherein a ...