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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 1541. Отображено 100.
09-02-2012 дата публикации

Optical pumping of a solid-state gain-medium using a diode-laser bar stack with individually addressable bars

Номер: US20120033692A1
Автор: David M. Schleuning, Mark M. Gitin, R. Russel Austin
Принадлежит: Coherent Inc

A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum.

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Номер записи: 1
19-04-2012 дата публикации

Intra-cavity optical parametric oscillator

Номер: US20120093179A1
Автор: David Stothard, Malcolm H. Dunn
Принадлежит: University of St Andrews

An optical parametric oscillator comprising: an optical cavity; a semiconductor gain-medium located within the optical cavity, such that together they form a semiconductor laser, and a nonlinear material located within the cavity such that the nonlinear material continuously generates down-converted idler- and signal-waves in response to a pump-wave continuously generated by the semiconductor gain-medium, wherein the pump wave is resonant within the optical cavity and one or other but not both of the down-converted waves is resonant within the pump wave cavity or a further optical cavity. Brewster plates ensure singly resonant optical parametric oscillators and a birefringent filer is used for frequency setting. Coupled cavities allow for setting the photon lifetime in the cavity that relaxation oscillations are prevented.

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Номер записи: 2
04-10-2012 дата публикации

Diode laser

Номер: US20120250712A1
Автор: Bernd Eppich
Принадлежит: Forschungsverbund Berlin FVB eV

A diode laser is provided with wavelength stabilization and vertical collimation of the emitted radiation, which allows a small distance of the volume Bragg grating from the emitting surface, a small vertical diameter of the collimated beam and also compensation for manufacturing tolerances affecting the shape of the grating and the lens. The diode laser comprises an external frequency-selective element for wavelength stabilization of the laser radiation, wherein the external frequency-selective element comprises an entry surface facing the exit facet and an exit surface facing away from the exit facet and is designed as a volume Bragg grating; and wherein the external frequency-selective element is designed in such a manner that the divergence of the radiation emitting from the exit facet is reduced during passage through the external frequency-selective element.

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Номер записи: 3
28-03-2013 дата публикации

SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF

Номер: US20130077648A1
Автор: ARNOLD Martin, Felder Ferdinand, Fill Matthias, Rahim Mohamed, Zogg Hans
Принадлежит: ETH ZURICH, ETH TRANSFER

A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part () comprising a layered first mirror (), providing a second component part () comprising a layered active region (), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror () so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum. 1. A method of manufacturing a surface-emitting semiconductor laser device , comprising:providing a pre-fabricated first component part comprising a first mirror having at least one mirror layer;providing a pre-fabricated second component part comprising an active region having at least one active layer made from a semiconductor material;joining the second component part to the first component part to form an integral unit;providing a second mirror forming an optical cavity with the first mirror such that the active region is located inside said optical cavity, so as to obtain a surface-emitting semiconductor laser device.2. The method of claim 1 , wherein the second component part is joined to the first component part by pressing or by a wafer bonding method claim 1 , in particular claim 1 , by liquid capillary bonding.3. The method of claim 1 , wherein the second component part comprises a second substrate on which the active region is disposed claim 1 , and wherein the second component part is joined to the first component part in an orientation so that the active region faces the first component part and the second substrate faces away from ...

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Номер записи: 4
13-06-2013 дата публикации

OPTICAL PUMPING OF A SOLID-STATE GAIN-MEDIUM USING A DIODE-LASER BAR STACK WITH INDIVIDUALLY ADDRESSABLE BARS

Номер: US20130148679A1
Автор: Austin R. Russel, Gitin Mark M., SCHLEUNING David
Принадлежит: Coherent, Inc.

A diode-laser bar stack includes a plurality of diode-laser bars having different temperature dependent peak-emission wavelengths. The stack is arranged such that the bars can be separately powered. This allows one or more of the bars to be “on” while others are “off”. A switching arrangement is described for selectively turning bars on or off, responsive to a signal representative of the temperature of the diode-laser bar stack, for providing a desired total emission spectrum. 1. A method of optically pumping a gain medium with a stack of diode laser bars , wherein at least some of the diode-laser bars in the stack have a different peak-emission wavelength at different temperatures , with the peak-emission wavelengths being directly dependent on the diode laser bar temperature , said method comprising the step of:supplying current to at least one but less than all the bars in the stack to generate laser output for optically pumping the gain medium;monitoring the temperature of the stack; andin response to the monitored temperature, changing which bars in the stack receive current in order to better match the wavelength emission of the stack to the peak absorption wavelength of the gain medium.2. The method of claim 1 , wherein the selected gain-medium is Nd:YAG claim 1 , the predetermined absorption band has a primary peak absorption at a wavelength of about 808 nanometers with a lower secondary peak at a wavelength of about 805 nanometers.3. The method of claim 1 , wherein the diode-laser bar stack is sandwiched between first and second cooling members each having a surface in thermal and electrical contact with the diode-laser bar stack.4. The method of wherein the temperature of the stack is monitored by temperature sensor.5. The method of claim 4 , wherein the temperature sensor is embedded in one of the cooling members proximate the surface thereof in thermal and electrical contact with the diode-laser bar stack.6. The method of wherein said step of changing ...

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Номер записи: 5
18-07-2013 дата публикации

Slot waveguide structure for wavelength tunable laser

Номер: US20130182730A1
Автор: Ruolln Li, Wenjun Fan
Принадлежит: Mars Technology Co Ltd

Exemplary embodiments provide a wavelength tunable laser device and methods using the wavelength tunable laser device for a laser tuning. An exemplary wavelength tunable laser device can include an active gain element, a slot waveguide structure, and a wavelength tuning structure including heating elements disposed around the grating structure for a wavelength selection.

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Номер записи: 6
26-09-2013 дата публикации

Laser system and method of operation

Номер: US20130250995A1
Автор: Andrew White, John Barr, Stephen Moore
Принадлежит: SELEX ES LTD

An exemplary laser system is disclosed which includes a pump laser diode array and laser gain material, in which the array generates optical radiation having a predetermined total linewidth approximately 20 nm wide constructed from a plurality of individual wavelengths with a linewidth of up to 8 nm, the centre wavelength of radiation being for example within the absorption band of laser gain material used at the centre point of the operating temperature of the array. The system can include a highly reflecting plane mirror with periodic transmitting patches placed between the laser diode array and the laser gain material, the size of the transmitting patches being such that minimal pump radiation is lost.

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Номер записи: 7
03-10-2013 дата публикации

COMPOUND ENCLOSURE FOR OPTICAL APPARATUS

Номер: US20130259076A1
Автор: Roth Matthias
Принадлежит: Coherent, Inc.

An optically pumped semiconductor laser is assembled in an enclosure comprising a base, a first mounting frame attached to the base, a second mounting frame attached to the first mounting frame and a cover attached to the second mounting frame. The assembly base, frames, and cover forms an undivided enclosure, with the frames contributing to walls of the enclosure. Components of the laser are assembled sequentially on the base and the frames. The frames are irregular in height to permit flexibility in the mounting-height of components. This reduces the extent to which compactness of the enclosure is limited by any one component. 1. Optical apparatus , the optical apparatus including a plurality of components and being contained in an enclosure comprising:a base-member, configured to provide a floor of the enclosure;one or more open frame-members stacked on the base-member and forming walls of the enclosure;a cover-member covering the enclosure; andwherein at least one of the components of the apparatus is mounted on a frame-member.2. The apparatus of claim 1 , wherein the optical apparatus includes a laser-resonator formed by at least two minors claim 1 , a gain-medium within the laser-resonator claim 1 , and a diode-laser array for optically pumping the gain-medium.3. The apparatus of claim 2 , wherein the diode-laser array is attached to the base member claim 2 , and at least one of the resonator minors is attached to a frame member.4. The apparatus of wherein there are first and second frame members claim 1 , with the first frame member attached to the base-member claim 1 , the second frame-member attached to the first frame member claim 1 , and the cover-member attached to the second frame member.5. The apparatus of claim 4 , wherein the optical apparatus is an intra-cavity doubled optically pumped semiconductor (OPS) laser having an OPS-structure including a gain-structure surmounted by a mirror-structure claim 4 , a laser-resonator formed between the mirror- ...

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Номер записи: 8
17-10-2013 дата публикации

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

Номер: US20130270518A1
Автор: Götz Erbert, Markus Weyers
Принадлежит: Forschungsverbund Berlin FVB eV

The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength. In addition, the document describes a system for frequency conversion with the semiconductor component and a pump laser diode, a method for operating a semiconductor component, and a method for manufacturing a semiconductor component.

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Номер записи: 9
05-12-2013 дата публикации

ELECTRON-BEAM-PUMPED LIGHT SOURCE

Номер: US20130322484A1
Автор: HATA Hiroshige, KATAOKA Ken, Maesoba Tsuyoshi, Takada Hiroyuki, Yamaguchi Masanori
Принадлежит: USHIO DENKI KABUSHIKI KAISHA

The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters. 1. An electron-beam-pumped light source comprising:an electron beam source; anda semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, whereinthe electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, andlight exits from a surface which the electron beam from the electron beam source of the semiconductor light-emitting device enters.2. The electron-beam-pumped light source according to claim 1 , wherein the electron beam emitting portion is formed of a carbon nanotube.3. The electron-beam-pumped light source according to claim 1 , wherein the electron beam source is arranged so as to surround the semiconductor light-emitting device.4. The electron-beam-pumped light source according to claim 1 , wherein the electron beam source is formed of an annular band-shaped member surrounding the semiconductor light-emitting device.5. The electron-beam-pumped light source according to claim 1 , wherein a plurality of the electron beam sources are ...

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Номер записи: 10
16-01-2014 дата публикации

Multi-chip ops-laser

Номер: US20140016657A1
Автор: Qi-Ze Shu
Принадлежит: Coherent Inc

A two-chip OPS laser includes first and second OPS-chips each emitting the same fundamental wavelength in first and second resonators. The first and second resonators are interferometrically combined on a common path terminated by a common end-mirror. The interferometric combination provides for automatic wavelength-locking of the laser, which can eliminate the need for a separate wavelength selective device in the laser.

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Номер записи: 11
30-01-2014 дата публикации

MODULATION AVERAGING REFLECTORS

Номер: US20140029083A1
Автор: Babic Dubravko Ivan, Komljenovic Tin
Принадлежит:

Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity. 2: The optical waveguide component of claim 1 , wherein said product is substantially equal to a natural number.3: The optical waveguide component of claim 1 , wherein said optical waveguide component is disposed on a planar lightwave circuit chip.4: The optical waveguide component of claim 1 , wherein said second port is terminated with a highly reflective structure.5: The optical waveguide component of claim 4 , wherein said optical waveguide component is disposed on a planar lightwave circuit chip having an optically flat edge and said highly reflective structure comprises a coating disposed on said optically flat edge.7: The planar lightwave circuit of claim 6 , configured for operation with amplitude modulated optical signals modulated at a line rate claim 6 , wherein a product of said line rate and each of said round-trip times is equal to or greater than unity.8: An optical source comprising claim 6 ,an optical gain element operatively configured to emit a first amplitude modulated optical signal, said amplitude modulation characterized by a symbol duration;a segment of distribution optical fiber coupled to said optical gain element;an array-waveguide grating having a grating-common port and a plurality of wavelength-specific ports, said segment of distribution optical fiber coupled to one of said wavelength-specific optical ports;an optical coupler having at least a coupler- ...

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Номер записи: 12
06-03-2014 дата публикации

METHOD AND APPARATUS FOR SUPPRESSING OPTICAL BEAT INTERFERENCE NOISE IN RAMAN AMPLIFIERS

Номер: US20140064728A1
Автор: Atlas Dogan
Принадлежит: ADVA Optical Networking SE

A method and apparatus for suppressing pump-mode optical beat interference noise in a Raman amplified fiber link of an optical network, wherein a wavelength of a laser beam generated by a first pump laser and a wavelength of a laser beam generated by a second pump laser of a pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the Raman amplified fiber link of said optical network. 1. A method for suppressing optical beat interference noise in a fiber link of an optical network ,wherein a wavelength of a laser beam generated by a first pump laser and a wavelength of a laser beam generated by a second pump laser of a pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the fiber link of said optical network.2. A pump signal generation apparatus adapted to generate a pump signal with suppressed optical beat interference , OBI , noise in a fiber link of an optical network , comprisingat least one pair of polarization multiplexed pump lasers having wavelengths which are detuned with respect to each other to suppress the optical beat interference, OBI, noise in the fiber link of said optical network.3. The apparatus according to claim 2 ,wherein each pair of polarization multiplexed pump lasers comprises a first pump laser and a second pump laser connected to a corresponding polarization beam combiner (PBC) adapted to combine the orthogonal polarized laser beams generated by the first and second pump laser.4. The apparatus according to claim 3 ,wherein a wavelength of a laser beam generated by the first pump laser and a wavelength of a laser beam generated by the second pump laser of each pair of polarization multiplexed pump lasers are detuned with respect to each other to suppress the optical beat interference noise.5. The apparatus according to claim 4 ,wherein each pair of polarization ...

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Номер записи: 13
03-01-2019 дата публикации

WAVELENGTH LOCKER USING MULTIPLE FEEDBACK CURVES TO WAVELENGTH LOCK A BEAM

Номер: US20190006816A1
Автор: COLBOURNE Paul, Larson Michael C., McLaughlin Sheldon, XIONG Wei
Принадлежит:

A device may include a first photodetector to generate a first current based on an optical power of an optical beam. The device may include a beam splitter to split a portion of the optical beam into a first beam and a second beam. The device may include a wavelength filter to filter the first beam and the second beam. The wavelength filter may filter the second beam differently than the first beam based on a difference between an optical path length of the first beam and an optical path length of the second beam through the wavelength filter. The device may include second and third photodetectors to respectively receive, after the wavelength filter, the first beam and the second beam and to generate respective second currents. 126-. (canceled)27. A device , comprising:a laser emitter to generate a laser beam to be wavelength locked to a target frequency based on an emission frequency to be measured by the device; 'the laser beam to be wavelength locked based on the first current;', 'a first photodetector to generate a first current based on a first optical power of the laser beam,'}a beam splitter to split a portion of the laser beam into a first beam and a second beam; the patterned etalon to have different optical path lengths for the first beam and the second beam, and', 'the patterned etalon to filter the first beam and the second beam to a second optical power and a third optical power, respectively, based on the different optical path lengths; and, 'a patterned etalon to filter the first beam and the second beam,'} 'a selected current, of the respective second currents, to be used to wavelength lock the laser beam.', 'second and third photodetectors to generate respective second currents,'}28. The device of claim 27 , wherethe beam splitter is further to split the portion of the laser beam into a third beam and a fourth beam, andthe third beam is received by the first photodetector without being filtered by the patterned etalon.29. The device of claim 27 , ...

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Номер записи: 14
08-01-2015 дата публикации

MEMS BASED SWEPT LASER SOURCE

Номер: US20150010026A1
Автор: Khalil Diaa Abdel Maged, Omran Haitham, Saadany Bassam A., Sadek Mohamed
Принадлежит: SI-WARE SYSTEMS

A MEMS-based swept laser source is formed from two coupled cavities. The first cavity includes a first mirror and a fully reflective moveable minor and operates to tune the output wavelength of the laser. The second cavity is optically coupled to the first cavity and includes an active gain medium, the first mirror and a second mirror. The second cavity further has a length substantially greater than the first cavity such that there are multiple longitudinal modes of the second cavity within a transmission bandwidth of the first cavity output. 1. A swept laser source , comprising:a first cavity formed between a first mirror and a moveable mirror that is fully reflective, the first cavity being operable to select at least one longitudinal mode of the first cavity as a first cavity output;a second cavity optically coupled to the first cavity to receive the first cavity output, the second cavity including an active gain medium operating as an optical amplifier and being formed between the first minor and a second minor, the second cavity having a length substantially greater than the first cavity such that there are multiple longitudinal modes of the second cavity within a transmission bandwidth of the first cavity output, the second cavity producing a laser output including at least one longitudinal mode of the second cavity that has a line width within the first cavity output; anda Micro-Electro-Mechanical Systems (MEMS) actuator coupled to the moveable minor to cause a displacement thereof to select the at least one longitudinal mode of the first cavity for the first cavity output, thereby tuning an output wavelength of the laser output;wherein the first cavity, the second cavity and the MEMS actuator are fabricated on a silicon substrate.2. The swept laser source of claim 1 , wherein the first cavity operates as a notch rejection filter in the optical domain and as a selective notch reflection filter in the presence of the active gain medium in the second cavity to ...

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Номер записи: 15
10-01-2019 дата публикации

Wavelength Stabilized Diode Laser

Номер: US20190013645A1
Автор: Ackley Donald E., Connolly John C., Guenther Harald R., Rudder Scott L.
Принадлежит:

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Brag grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability. 1. A device configured to generate at least one laser emission , the device comprising:a semiconductor gain section generating a light emission, said semiconductor gain section comprising:a rear facet having a first reflectivity; anda front facet having a second reflectivity, said rear facet and said front facet forming a first resonant cavity having a first plurality of non-lasing resonance, and receive said light emission; and', 'reflect a portion of the received light emission back into the semiconductor gain section, wherein the rear facet of the semiconductor gain section and the volume Bragg grating form a second resonant cavity, overlapping the first resonant cavity, said second resonant cavity generating a second plurality of non-lasing resonances, wherein at least one of said first plurality of non-lasing resonances and a corresponding at least one of said second plurality of non-lasing is substantially coincident, said substantially at least one coincident resonance having a modal gain sufficient to generate corresponding ones of said at least one laser emission., 'a volume Bragg grating, having a known reflectivity, configured to2. The device of claim 1 , wherein the rear facet reflectivity is fixed and the front facet reflectivity is chosen such that the modal gain of the first plurality of resonances is less than said lasing ...

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Номер записи: 16
14-01-2021 дата публикации

SINGLE-PHOTON SOURCE WITH HIGH INDISCERNIBILITY FACTOR

Номер: US20210013702A1
Автор: Claudon Julien, Gérard Jean-Michel
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A single-photon source including a monomode photonic wire wherein a single-photon emitter is located, the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis, including a lower part resting in contact with a support substrate and including the single-photon emitter. 1. A single-photon source , comprising:a support substrate comprising a reflective layer;a photonic wire,resting on the support substrate and arranged facing the reflective layer, and extending along a longitudinal axis Δ substantially orthogonal to the plane of the support substrate;comprising a single-photon emitter;forming a monomode waveguide for the single photons; andhaving transverse dimensions that vary longitudinally in the direction of an upper end of the photonic wire, so as to form a mode adapter for a guided optical mode;an optical excitation device designed to excite the emitter through a laser pulse, and thus bring about the spontaneous emission of single photons by the emitter;the photonic wire being formed of two coaxial parts that are distinct and spaced from one another along the longitudinal axis Δ:a lower part, resting in contact with the support substrate, in which the emitter is arranged,an upper part, suspended above the lower part and optically coupled thereto,the single-photon source furthermore comprising a holding structure, comprising:at least one pillar resting in contact with the support substrate and arranged adjacent to the photonic wire, andat least one holding arm mechanically connecting the upper part to the pillar and keeping the upper part suspended above the lower part.2. The single-photon source according to claim 1 , wherein the lower part has a volume less than that of the upper part.3. The single-photon source according to claim 1 , wherein the upper part comprises the mode adapter.4. The single-photon source according to claim 1 , wherein the upper part is spaced from the lower part by a ...

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Номер записи: 17
15-01-2015 дата публикации

LASER DEVICE

Номер: US20150016484A1
Автор: Hirano Yoshihito, KURAMOTO Kyosuke, Yanagisawa Takayuki
Принадлежит: Mitsubishi Electric Corporation

An end surface of a solid-state laser element is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface of a wavelength conversion element is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface and the end surface are arranged in such a way as to be opposite to each other. 1. A laser device including a pump laser that emits pumping light , a solid-state laser element that absorbs the pumping light emitted from said pump laser to generate laser light , and an optical element upon which the laser light generated by said solid-state laser element is incident , whereinan end surface of said solid-state laser element is sloped in such a way that, in a case in which it is assumed that said laser light is incident upon air from the end surface of said solid-state laser element, an angle of incidence which a normal to an end face on a side of said solid-state laser element in a plane of the incidence forms with a traveling direction of said laser light substantially matches a Brewster angle at the incidence plane, an end surface of said optical element is sloped in such a way that, in a case in which it is assumed that said laser light is incident upon air from the end surface of said optical element, an angle of incidence which a normal to an end face on a side of said optical element in a plane of the incidence forms with a traveling direction of said laser light substantially matches a Brewster angle at the incidence plane, and the end surface of said solid-state laser element ...

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Номер записи: 18
26-01-2017 дата публикации

RAPIDLY TUNABLE LASER ASSEMBLY

Номер: US20170025818A1
Автор: Arnone David F., Fotheringham Edeline, Kim Eric, Weida Miles
Принадлежит:

A laser assembly for generating an output beam includes a first module assembly, a second module assembly, and a module fastener assembly. The second module assembly is selectively movable relative to the first module assembly to selectively adjust a cavity length, and a pivot axis of a grating in the laser. Further, an arm assembly that retains the grating can be adjusted to adjust the cavity length, and to adjust the plane of the grating face. Moreover, the grating is movable relative to the arm assembly to align the grating. 117-. (canceled)18. A laser assembly for emitting an output beam , the laser assembly comprising:a first module assembly that includes (i) a rigid first frame; and (ii) a gain medium coupled to the first frame, the gain medium having a facet, the gain medium generating a beam that exits the facet along a lasing axis when sufficient current is directed to the gain medium;a second module assembly that includes (i) a rigid second frame; (ii) a diffraction grating positioned in the path of the beam exiting the facet to form an external cavity having a cavity length; (iii) an arm assembly that retains the diffraction grating; and (iv) a pivot assembly that secures the arm assembly to the second frame in a fashion that allows the arm assembly and the grating to effectively pivot about a pivot axis; anda module fastener assembly that is moveable between (i) an unlocked position in which the second frame can be selectively moved relative to the first frame to selectively adjust at least one of the cavity length, and the position of the pivot axis relative to the lasing axis; and (ii) a locked position in which the second module assembly is fixedly secured to the first module assembly to inhibit relative movement between the first frame and the second frame.19. The laser assembly of wherein in the unlocked position claim 18 , the second frame can be selectively moved relative to the first frame to selectively adjust the cavity length.20. The laser ...

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Номер записи: 19
28-01-2016 дата публикации

Polarization stable widely tunable short cavity laser

Номер: US20160028208A1
Автор: Alex Ezra Cable, Benjamin Michael Potsaid, Vijaysekhar Jayaraman
Принадлежит: Praevium Research Inc, Thorlabs Inc

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. A short cavity laser with a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation is disclosed. Methods for obtaining polarization stable operation of the tunable source are presented.

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Номер записи: 20
25-01-2018 дата публикации

MECHANICALLY ISOLATED OPTICALLY PUMPED SEMICONDUCTOR LASER

Номер: US20180026423A1
Автор: WISDOM Jeffrey Alan
Принадлежит:

A housing for an optically pumped semiconductor (OPS) laser resonator is terminated at one end thereof by an OPS-chip. The laser resonator is assembled on a platform with the OPS-chip at one end of the platform. The platform is fixedly attached to a baseplate at the OPS-chip end of the platform. The remainder of the platform extends over the baseplate with a gap between the platform and the baseplate. A pump-laser is mounted directly on the baseplate and delivers pump radiation to the OPS-chip. 1. Laser apparatus , comprising:a cantilever platform having first and second opposite ends;a baseplate having first and second opposite surfaces;an optically pumped semiconductor (OPS) laser-resonator including an OPS-chip, the OPS laser-resonator assembled on the cantilever platform with the OPS-chip bonded to a heat-sink attached to the first end of the cantilever platform;wherein the first end of the cantilever platform is supported on the baseplate, and a remaining portion of cantilever platform including the second end thereof extends over the baseplate with a gap between the remaining portion of the cantilever platform and the baseplate; andwherein a pump-radiation source is mounted on the first surface of the baseplate and arranged to deliver optical pump radiation to the OPS-chip for energizing the OPS laser-resonator.2. The apparatus of claim 1 , wherein the gap between the remaining portion of the cantilever platform and the baseplate is provided by a trough formed in the first surface of the baseplate.3. The apparatus of claim 2 , wherein the cantilever platform is rectangular and the trough is rectangular.4. The apparatus of claim 1 , wherein the pump radiation source includes a diode-laser.5. The apparatus of claim 1 , wherein the laser resonator is a folded laser resonator.6. The apparatus of claim 1 , further including a heat-sink attached to the second surface of the baseplate.7. The apparatus of wherein one end of the laser-resonator terminates in the OPS- ...

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Номер записи: 21
29-01-2015 дата публикации

LASER DEVICE

Номер: US20150029515A1
Автор: Fagerhøj Thomas P., Goth Bjarke, PEDERSEN Jens E., POULSEN Christian V., SØRENSEN Henrik, VARMING Poul
Принадлежит: NKT Photonics A/S

The invention relates to a laser device, comprising a laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser, to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency, wherein the laser control module comprises a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity. 139.-. (canceled)40. A sensor comprising a laser device , comprising:a tunable laser configured to generate laser light and a laser control module configured to receive at least a portion of the laser light generated by the laser to generate a control signal and to feed the control signal back to the laser for stabilizing the frequency,wherein the laser comprises a laser cavity and the laser control module comprises a tunable frequency discriminating element which is preferably continuously frequency tunable, and where the laser control module is placed outside the laser cavity,wherein the laser control module is encapsulated inside a hermetically sealed housing.41. The sensor according claim 40 , wherein the tunable laser operates in a single longitudinal mode42. The sensor according to claim 40 , wherein the tunable laser is a fiber laser claim 40 , a diode laser or a solid-state laser43. The sensor according to claim 40 , wherein the frequency discriminating element comprises solid silica44. The sensor according to claim 40 , wherein the laser control module is fiber coupled to the tunable laser.45. The sensor according to claim 40 , wherein the laser control module is temperature controlled46. The sensor according to claim 40 , wherein the frequency discriminating element is an interferometer.47. The sensor according to claim 46 , wherein the interferometer is a Fabry-Perot interferometer.48. The sensor according to claim 46 , wherein the ...

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Номер записи: 22
10-02-2022 дата публикации

EFFICIENT GENERATION OF SPATIALLY-RESTRUCTURABLE HIGH-ORDER HG-MODES IN A LASER CAVITY

Номер: US20220045480A1
Автор: Fallahi Mahmoud, Hessenius Chris, Lukowski Michal L.
Принадлежит:

A vertical external cavity surface emitting laser (VECSEL) based system in a linear single cavity configuration is configured to deliver light in higher-order Hermite-Gaussian transverse modes with Watt-level output power. Simultaneous and independent lasing of spatially-restructurable multiple high-order transverse modes that are collinearly-propagating at the output of such laser cavity is facilitated with the use of an optical pumping scheme devised to control positions of location at which the gain medium of the system is pumped (e.g., locations of focal spots of multiple pump beams on the gain-medium chip). An external astigmatic mode converter is utilized to convert such high-order Hermite-Gaussian modes into corresponding Laguerre-Gaussian modes. 1. A laser system , comprising:a linear laser cavity having a laser cavity axis and defined by first and second reflectors;a laser gain medium chip containing said first reflector;the second reflector dimensioned to have a center of curvature of the second reflector at an axial point of the first reflector;multiple pump channels configured to deliver pumping energy to the laser gain medium chip at respectively-corresponding multiple initial locations of a surface of the laser gain medium chip in a fashion that allows for spatially-varying said multiple initial locations; anda mechanism configured to cause, during the operation of the laser system, a change of first and second of said multiple initial locations to respectively-corresponding third and fourth locations.2. The laser system according to claim 1 , further comprising an astigmatic mode converter (AMC) system outside of the laser cavity on the laser cavity axis.3. The laser system according to claim 2 , wherein the AMC system is configured to have at least one of optical elements of the AMC system to be rotated about the laser cavity axis.4. (canceled)5. The laser system according to claim 1 , wherein at least one of the following conditions is satisfied:a) ...

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Номер записи: 23
02-02-2017 дата публикации

Quantum Cascade Laser with Serially Configured Gain Sections

Номер: US20170033532A1
Автор: Partridge Guthrie
Принадлежит: AGILENT TECHNOLOGIES, INC.

An apparatus that includes a gain chip assembly, an external cavity, and a controller is disclosed. The gain chip assembly includes first and second gain chips that are coupled optically such that light travels serially between the first gain chip and the second gain chip, each gain chip is electrically biased. The electrical bias of the first gain chip is independent of the electrical bias of the second gain chip. The external cavity has a tunable wavelength selective filter that is changed in response to a control signal. Light in the external cavity passes through the gain chip assembly. The controller determines the tunable wavelength selective filter, and the electrical bias of each of the gain chips so as to cause the apparatus to lase at a wavelength specified by a control signal to the controller. 1. An apparatus comprising:a gain chip assembly comprising first and second gain chips that are coupled optically such that light travels serially between said first gain chip and said second gain chip, each gain chip being electrically biased, said electrical bias of said first gain chip being independent of said electrical bias of said second gain chip;an external cavity having a tunable wavelength selective filter that selectively passes light in a pass band that is changed in response to a control signal, light in said external cavity passing through said gain chip assembly; anda controller that generates said control signal, and said electrical bias of each of said gain chips,wherein said first gain chip comprises an active layer comprising a first sub-layer having a plurality of quantum well layers characterized by a first quantum well thickness, said second gain chip comprises an active layer having second and third sub-layers, said second sub-laver comprising a plurality of quantum well layers characterized by a second quantum well thickness, and said third sub-layer comprising a plurality of quantum well layers Characterized by a third quantum well ...

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Номер записи: 24
02-02-2017 дата публикации

SEMICONDUCTOR LASER DEVICE

Номер: US20170033537A1
Автор: Kan Hirofumi, ZHENG Yujin
Принадлежит: HAMAMATSU PHOTONICS K.K.

A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θ(>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θ/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θ/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers. 1. A semiconductor laser device comprising:{'sub': 'S', 'a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θ(>4°) in a slow axis direction are arranged in the slow axis direction;'}a collimating lens that collimates the laser lights emitted from each of the active layers in a plane perpendicular to the slow axis direction;a first optical element that reflects first partial lights advancing to one side in the slow axis direction from among each of the laser lights emitted from the collimating lens by a first reflecting surface and returns the first partial lights to each of the active layers via the collimating lens; anda second optical element that reflects a part of the mode lights of a plurality of mode lights of second partial lights advancing to the other side in the slow axis direction from among each of the laser lights emitted from the collimating lens by a second reflecting surface and returns the part of the mode lights to each of the active layers via the collimating lens,{'sub': 'S', 'wherein the first optical element is disposed such ...

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Номер записи: 25
01-02-2018 дата публикации

SINGLE LONGITUDINAL MODE LASER DIODE SYSTEM

Номер: US20180034239A1
Автор: Ban Vladimir Sinisa, Dolgy Sergei, Volodin Boris Leonidovich
Принадлежит: NECSEL INTELLECTUAL PROPERTY, INC.

A semiconductor laser diode system may include a single longitudinal mode laser diode and a feedback system that monitors and controls the emission characteristics of the laser diode. The laser diode may include a gain medium and an optical feedback device. The feedback system may include a wavelength discriminator, an optical detector, a microprocessor, and a laser controller. Such a semiconductor laser diode system may be used to produce laser light having coherence length, wavelength precision, and wavelength stability that is equivalent to that of a gas laser. Accordingly, such a semiconductor laser diode system may be used in place of a traditional gas laser. 1. A semiconductor laser diode system , comprising:a semiconductor laser source having a laser cavity;an optical feedback device, wherein the optical feedback device is a three-dimensional optical element having a Bragg grating recorded therein, and wherein the Bragg grating causes a narrowband portion of radiation emitted from the laser source to be fed back into the laser cavity, the optical feedback device being configured to cause the laser diode to achieve single longitudinal mode at a desired wavelength; anda feedback system that monitors emission characteristics of the laser diode, the feedback system comprising a processor that is configured to adjust one or more control characteristics of the laser diode to cause the laser diode to achieve and maintain a single longitudinal mode condition using only output power characteristics of the laser diode.2. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be fed back into the laser cavity as seed light at the desired wavelength.3. The semiconductor laser diode system of claim 1 , wherein the Bragg grating causes the narrowband portion of the radiation emitted from the laser source to be reflected back into the laser cavity as seed light at the ...

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Номер записи: 26
04-02-2021 дата публикации

NARROW LINEWIDTH EXTERNAL CAVITY LASER AND OPTICAL MODULE

Номер: US20210036489A1
Автор: LUO Liang, TU Wenkai
Принадлежит:

A narrow linewidth external cavity laser includes a sealed housing, an external resonant cavity disposed in the sealed housing, and a gain chip and a tunable wavelength selective component disposed in the external resonant cavity. An electrical interface of the sealed housing is configured to receive an electrical signal such as a drive signal, a wave selection signal, a cavity length control signal, and a dither control signal. The cavity length control signal is configured to adjust an optical cavity length of the external resonant cavity so that a laser mode produced in the external resonant cavity aligns with a wavelength selected by the wavelength selective component. The dither control signal is configured to control the optical cavity length of the external resonant cavity to produce dither by adjusting an optical length of the gain chip in order to lock a center wavelength of an output light beam. 1. A narrow linewidth external cavity laser comprising:a sealed housing having disposed thereon an optical interface and an electrical interface;an external resonant cavity disposed in the sealed housing; anda gain chip and a tunable wavelength selective component that are disposed in the external resonant cavity,whereinthe electrical interface is configured to receive an electrical signal comprising a drive signal, a wave selection signal, a cavity length control signal, and a dither control signal,the drive signal is configured to drive the gain chip to emit a light beam, the light beam resonating in the external resonant cavity to produce a laser mode;the wave selection signal is configured to tune the wavelength selective component to select a wavelength;the cavity length control signal is configured to adjust an optical cavity length of the external resonant cavity so that the laser mode aligns with the wavelength selected by the wavelength selective component;the dither control signal is configured to control the optical cavity length of the external resonant ...

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Номер записи: 27
08-02-2018 дата публикации

CRYSTALLINE COLOR-CONVERSION DEVICE

Номер: US20180041005A1
Автор: Bower Christopher, Cok Ronald S., MEITL Matthew
Принадлежит:

According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy. 1. A crystalline color-conversion device , comprising:an electrically driven first light emitter for emitting first light having a first energy in response to an electrical signal; andan inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy,wherein the second light emitter is electrically isolated from the first light emitter, is located in optical association with the first light emitter, and is located within 0 to 250 microns of the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.2. The crystalline color-conversion device of claim 1 , wherein the second light emitter has a composition different from the first light emitter.3. The crystalline color-conversion device of or claim 1 , wherein the first light emitter is an inorganic solid single-crystal direct bandgap light emitter.4. The crystalline color-conversion device of claim 3 , wherein the crystal lattice structure of the first light emitter is different from the ...

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Номер записи: 28
07-02-2019 дата публикации

MID-INFRARED VERTICAL CAVITY LASER

Номер: US20190044304A1
Автор: Cable Alex, Jayaraman Vijaysekhar, Lascola Kevin, Segal Stephen, Towner Fredrick
Принадлежит:

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases. 1. An optically pumped vertical cavity laser (VCL) optically pumped with a pump source at a pump wavelength and providing VCL emission at an emission wavelength , said VCL comprising:a first mirror,a second mirror, anda periodic gain active region,wherein said periodic gain active region comprises at least two type I quantum wells containing Indium, Arsenic, and Antimony, said active region further comprising a barrier region adjacent to said type I quantum wells which is absorbing at said pump wavelength, and a cladding region adjacent to said barrier region, which is substantially transparent at said pump wavelength.2. The VCL of claim 1 , wherein said type I quantum wells further contain Gallium.3. The VCL of claim 1 , wherein said emission wavelength is in a range of about 3-5 um.4. The VCL of claim 1 , wherein each of said quantum wells is compressively strained with a strain in a range of about 1-2%.5. The VCL of claim 1 , wherein said barrier region comprises quinary AlInGaAsSb.6. The VCL of claim 1 , wherein said cladding region comprises AlAsSb.7. The VCL of claim 1 , wherein said pump wavelength falls within one of the list of ranges from about 1.45-1.65 um claim 1 , about 1.7-2.1 um claim 1 , and about 0 ...

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Номер записи: 29
18-02-2021 дата публикации

Tunable VCSEL with combined gain and DBR mirror

Номер: US20210050712A1
Автор: Johnson Bartley C., Kuznetsov Mark E., Whitney Peter S.
Принадлежит:

A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example. 1. A vertical surface emitting laser , comprising:a distributed Bragg reflector; andquantum wells located in the distributed Bragg reflector.2. The laser of claim 1 , further comprising a deflectable membrane carrying a mirror defining an optical cavity of the laser.3. The laser of claim 1 , wherein the quantum wells are located in shallow layers of the distributed Bragg reflector.4. The laser of claim 1 , wherein the quantum wells located in the distributed Bragg reflector are fabricated in AlGaAs/GaAs.5. The laser of claim 1 , wherein the quantum wells are located between high index layers and low index layers of the distributed Bragg reflector.6. The laser of claim 1 , wherein the quantum wells are located in high index layers of the distributed Bragg reflector.7. The laser of claim 1 , wherein the quantum wells are placed at antinodes of standing wave patterns in the laser.8. The laser of claim 1 , further comprising eight or more quantum wells.9. The laser of claim 1 , wherein the high index layers of the distributed Bragg reflector are thinner than the low index layers.10. The laser of claim 1 , wherein the quantum wells are optically pumped.11. The laser of claim 1 , wherein the quantum wells are electrically pumped.12. A vertical surface emitting laser system claim 1 , comprising:a vertical surface emitting laser, including a distributed Bragg reflector and quantum wells located in the distributed Bragg reflector; anda pump laser for optically pumping the quantum wells.13. The system of claim ...

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Номер записи: 30
16-02-2017 дата публикации

OPTICAL AMPLIFIER

Номер: US20170047707A1
Автор: HAMILTON Craig James, MALCOLM Graeme Peter Alexander
Принадлежит:

An optical amplifier is described. The optical amplifier () comprises a semiconductor disk gain medium () including at least one quantum well layer () and a pump field source () for generating an optical pump field () for the semiconductor disk gain medium. The optical amplifier acts to generate an output optical field () from an input optical field () received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium. Employing a semiconductor disk gain medium within the optical amplifier allows it to be optically pumped and thus provided for increased stability and beam quality of the output optical field while allowing for the design of optical amplifiers which can operate across a broad range of wavelengths. The optical amplifier may be employed with continuous wave or pulsed input optical fields. 1) An optical amplifier comprising a semiconductor disk gain medium that includes at least one quantum well layer; and a pump field source for generating an optical pump field for the semiconductor disk gain medium wherein the optical amplifier generates an output optical field from an input optical field received by the optical amplifier and arranged to be incident upon the semiconductor disk gain medium.2) An optical amplifier as claimed in wherein the semiconductor disk gain medium is mounted on a reflector.3) An optical amplifier as claimed in wherein the reflector comprises a Distributed Bragg Reflector (DBR).4) An optical amplifier as claimed in wherein the pump field source comprises a diode laser.5) An optical amplifier as claimed in wherein the input optical field comprises a continuous wave optical field.6) An optical amplifier as claimed in wherein the input optical field comprises a pulsed optical field.7) An optical amplifier as claimed in further comprising one or more steering optics arranged to form an input optical field resonator that provides a means for the input optical field to be incident upon the semiconductor ...

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Номер записи: 31
16-02-2017 дата публикации

GRATING ELEMENT AND EXTERNAL RESONATOR TYPE LIGHT EMITTING DEVICE

Номер: US20170047711A1
Автор: ASAI Keiichiro, Ejiri Tetsuya, Kondo Jungo, OKADA Naotake, YAMAGUCHI Shoichiro
Принадлежит: NGK Insulators, Ltd.

A grating element includes: a support substrate; an optical material layer; a ridge optical waveguide having an incidence surface on which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; and a Bragg grating including concave and convex portions formed within the optical waveguide. The optical waveguide includes an incident portion between the incidence surface and the Bragg grating, and a tapered portion between the incident portion and the Bragg grating. In the Bragg grating, a propagation light propagates in single mode. The width Wof the optical waveguide in the incident portion is larger than the width Wof the optical waveguide in the Bragg grating. The width Wof the optical waveguide in the tapered portion is decreased from the incident portion toward the Bragg grating. The relationships represented by formulas (1) to (3) are satisfied. 1. A grating element comprising:a support substrate;an optical material layer disposed over said support substrate;a ridge optical waveguide disposed in said optical material layer, said ridge optical waveguide having an incidence surface to which a laser light is incident and an emission end from which an emission light with a desired wavelength is emitted; anda Bragg grating comprising concave and convex portions formed within said ridge optical waveguide,wherein said ridge optical waveguide comprises an incident portion disposed between said incidence surface and said Bragg grating, and a tapered portion disposed between said incident portion and said Bragg grating,wherein a propagating light propagates at least in said Bragg grating in a single mode,wherein a width of said ridge optical waveguide in said incident portion is larger than a width of said ridge optical waveguide in said Bragg grating,wherein a width of said ridge optical waveguide in said tapered portion is decreased from said incident portion toward said Bragg grating, and [{'br': None, 'sub': 'G ...

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Номер записи: 32
14-02-2019 дата публикации

EXTERNAL RESONANCE TYPE LASER MODULE, ANALYSIS APPARATUS, METHOD OF DRIVING EXTERNAL RESONANCE TYPE LASER MODULE, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

Номер: US20190052058A1
Автор: Dougakiuchi Tatsuo, EDAMURA Tadataka, SUGIYAMA Atsushi
Принадлежит: HAMAMATSU PHOTONICS K.K.

An external resonance type laser module includes a quantum cascade laser, a MEMS diffraction grating configured to include a diffraction/reflection portion configured to diffract and reflect light emitted from the quantum cascade laser and return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion, and a controller configured to control driving of the quantum cascade laser. The controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more). 1. An external resonance type laser module comprising:a quantum cascade laser;a MEMS diffraction grating configured to include a diffraction/reflection portion that diffracts and reflects light emitted from the quantum cascade laser and to return a part of the light to the quantum cascade laser by swinging the diffraction/reflection portion; anda controller configured to control driving of the quantum cascade laser,wherein the controller is configured to pulse-drive the quantum cascade laser such that pulsed light of a second frequency higher than a first frequency at which the diffraction/reflection portion swings is emitted from the quantum cascade laser and a phase of the pulsed light changes each time the diffraction/reflection portion reciprocates m times (m: an integer of 1 or more).2. The external resonance type laser module according to claim 1 , wherein the controller is configured to pulse-drive the quantum cascade laser such that the phase of the pulsed light changes by a predetermined value each time the diffraction/reflection portion reciprocates m times.3. The external resonance type laser module according to claim 2 , wherein the predetermined value is equal to a pulse ...

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Номер записи: 33
15-05-2014 дата публикации

Distributed feedback surface emitting laser

Номер: US20140133506A1
Автор: Thomas Wunderer
Принадлежит: Palo Alto Research Center Inc

A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λ lase . Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λ lase .

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Номер записи: 34
05-03-2015 дата публикации

Self mode-locking semiconductor disk laser

Номер: US20150063390A1
Автор: Craig James Hamilton, Graeme Peter Alexander MALCOLM, Lukasz Kornaszewski
Принадлежит: Solus Technologies Ltd

The present invention describes a self mode locking laser and a method for self mode locking a laser. The laser ( 1 ) comprises a resonator terminated by first ( 3 ) and second ( 4 ) mirrors and folded by a third mirror ( 5 ). The third mirror comprises a single distributed Bragg reflector ( 17 ) upon which is mounted a multilayer semiconductor gain medium ( 18 ) and which includes at least one quantum well layer and an optical Kerr lensing layer ( 22 ). Self mode locking may be achieved by configuring the laser resonator such that the lensing effect of the Kerr lensing layer acts to reduce an astigmatism deliberately introduced to the cavity mode. The self mode locking of the laser may be further enhanced by selecting the length of the resonator such that a round trip time of a cavity mode is matched with an upper-state lifetime of one or more semiconductor carriers located within the gain medium.

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Номер записи: 35
01-03-2018 дата публикации

MOVABLE DIFFRACTION GRATING, METHOD OF MANUFACTURING THE SAME, AND EXTERNAL RESONATOR TYPE LASER MODULE

Номер: US20180062350A1
Автор: EDAMURA Tadataka, SUGIYAMA Atsushi
Принадлежит: HAMAMATSU PHOTONICS K.K.

A movable diffraction grating includes: a support portion; a movable portion swingably connected to the support portion; a coil buried in the movable portion; a magnetic field generator configured to apply a magnetic field to the coil; an insulation layer provided on a surface of the movable portion; a resin layer provided on the insulation layer and provided with a diffraction grating pattern; and a reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern. 1. A movable diffraction grating comprising:a support portion;a movable portion swingably connected to the support portion;a coil buried in the movable portion;a magnetic field generator configured to apply a magnetic field to the coil;an insulation layer provided on a surface of the movable portion;a resin layer provided on the insulation layer and provided with a diffraction grating pattern; anda reflection layer formed of a metal and provided on the resin layer to follow the diffraction grating pattern.2. The movable diffraction grating according to claim 1 ,wherein the coil is disposed inside a groove formed in the surface of the movable portion.3. The movable diffraction grating according to claim 1 ,wherein the diffraction grating pattern is disposed in an area overlapping the coil when viewed in a direction perpendicular to the surface of the movable portion.4. The movable diffraction grating according to claim 1 ,wherein the diffraction grating pattern is a blazed grating pattern diffracting light having a wavelength in a mid-infrared region.5. A method of manufacturing the movable diffraction grating according to claim 1 , comprising:a first step of preparing a substrate including a portion corresponding to the support portion and the movable portion and forming the coil to be buried in the movable portion;a second step of forming the insulation layer on the surface of the movable portion after the first step;a third step of disposing a resin material ...

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Номер записи: 36
12-03-2015 дата публикации

MULTI-STAGE MOPA WITH FIRST-PULSE SUPPRESSION

Номер: US20150070753A1
Автор: KNAPPE Ralf, SEIFERT Albert, WEIS Alexander
Принадлежит: COHERENT KAISERSLAUTERN GMBH

A solid-state MOPA includes a mode-locked laser delivering a train of pulses. The pulses are input to a fast E-O shutter, including polarization-rotating elements, polarizing beam-splitters, and a Pockels cell that can be driven alternatively by high voltage (HV) pulses of fixed long and short durations. A multi-pass amplifier follows the E-O shutter. The E-O shutter selects every Nth pulse from the input train and delivers the selected pulses to the multi-pass amplifier. The multi-pass amplifier returns amplified seed-pulses to the E-O shutter. The shutter rejects or transmits the amplified pulses depending on whether the HV-pulse duration is respectively short or long. Transmitted amplified pulses are delivered to a transient amplifier configured for separately suppressing first-pulse over-amplification and residual pulse leakage. 1. Optical apparatus comprising:a mode-locked laser delivering a first train of pulses at a first pulse-repetition frequency (PRF);at least one transient optical amplifier having a solid-state gain-element optically pumped by radiation output from a diode-laser array for energizing the gain-element, the diode laser array having selectively variable output power;a multi-pass optical amplifier;an optical shutter arranged to select pulses from the first train thereof to provide a second train of pulses at a second PRF less than the first PRF, provide the selected pulses to the multi-pass amplifier to be amplified, receive a corresponding train of amplified pulses from the multi-pass amplifier and selectively transmit a plurality of pulses from the train of amplified pulses to the transient optical amplifier for further amplification, with pulses in the plurality thereof having about equal amplitude;wherein the diode-laser array power is set at a first level when amplified pulses are not being received to maintain about constant thermal lensing in the gain-element, set at a second level lower than the first level for a predetermined first ...

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Номер записи: 37
10-03-2016 дата публикации

DRIVER SYSTEM FOR SEMICONDUCTOR LASER EXCITED SOLID-STATE LASER

Номер: US20160072253A1
Автор: KADOYA Minoru
Принадлежит:

The switching power source circuit () for the solid-state laser () excited by a semiconductor laser () uses a higher switching frequency than the relaxation oscillation (f) of the solid-state laser so that the optical noises due to the switching noises or ripples in the output voltage of the switching power source circuit can be minimized. When the voltage drop caused by a semiconductor power device (Q) is forwarded to a feedback terminal () of the switching power source circuit, even when the forward voltage of the semiconductor laser should vary, the output voltage of the switching power source circuit can be regulated to a value suitable for the driving of the semiconductor laser, and the heat generation from the semiconductor power device can be minimized. 1. A driver system for a solid-state laser excited by a semiconductor laser , comprising:a switching power source circuit for converting externally supplied electric power of a certain voltage into DC power of a prescribed voltage; anda semiconductor laser driver circuit powered by the switching power source circuit for driving the semiconductor laser for exciting the solid-state laser;wherein the switching power source circuit uses a switching frequency at least twice a relaxation oscillation frequency of the solid-state laser.2. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching frequency of the switching power source circuit is at least ten times of the relaxation oscillation frequency of the solid-state laser.3. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching frequency of the switching power source circuit is 2 MHz or higher.4. The driver system for the solid-state laser excited by the semiconductor laser according to claim 1 , wherein the switching power source circuit is provided with a feedback input terminal for output voltage control thereof claim 1 , and ...

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Номер записи: 38
27-02-2020 дата публикации

STABILIZED DIODE LASER

Номер: US20200067275A1
Автор: Bartko Andrew P., Daly Ryan W., Ronningen Theodore J., Ross Brad, Walczak Karen
Принадлежит:

A stabilized diode laser device is disclosed, which includes a unibody mounting plate that is mated mechanically to a thermoelectric cooler. The unibody mounting plate comprises chambers in which components, including a laser diode, are aligned and secured. A combination of the secured components within the unibody mounting plate, along with the thermoelectric cooler, provides stabilization of the laser diode. 1. A stabilized diode laser device comprising: a laser diode that is controlled to emit an output comprising light;', 'a collimating lens; and', 'a volume Bragg grating;, 'a housing containing a set of components, comprisingwherein:the laser diode, collimating lens, and volume Bragg grating are optically aligned such that the collimating lens causes an axis of light emitted by the laser diode to diverge at a controlled angle so that light that reaches the volume Bragg grating is spatially extended to match the laser diode;the volume Bragg grating is positioned to reflect a fraction of the light emitted by the laser diode over a narrow spectral range that interacts with the laser diode and stabilizes a laser diode output to match a reflection spectrum of the volume Bragg grating; andthe emitted output of the laser diode lases over a rectangular surface.3. The stabilized diode laser device of claim 1 , wherein the volume Bragg grating is optically aligned with the laser diode to reduce the laser diode spectral width by an order of magnitude of at least two.4. The stabilized diode laser device of claim 1 , wherein the collimating lens is a spherical lens.5. The stabilized diode laser device of claim 1 , wherein the housing comprises a stack up of single-axis translation and rotation stages associated with the set of components; 'a clamp that holds each component of the set of components in position.', 'further comprising6. The stabilized diode laser device of claim 5 , wherein the stack up of single-axis translation and rotation stages comprise five additional ...

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Номер записи: 39
05-06-2014 дата публикации

TUNABLE LASER USING III-V GAIN MATERIALS

Номер: US20140153601A1
Автор: Doerr Christopher, Swanson Eric
Принадлежит:

Disclosed herein are techniques, methods, structures and apparatus that provide a laser monolithically integrated in a silicon photonic integrated circuit (PIC) that is suitable for high-performance coherent fiber-optic telecommunications and other applications. Among the features of a laser according to the present disclosure, and in particular a hybrid InGaAsP/Si laser, is an integrated Si isolator to protect the laser from back reflections; optical, rather than electrical pumping; and coupling the optical pump using an InGaAsP grating coupler that acts simultaneously as a WDM coupler and laser mirror. 1. A optically pumped , III-V silicon laser comprising:a laser element having a gain medium disposed within a laser cavity that generates laser light in response to pump light;a grating coupler for coupling the pump light emitted by a pump laser to the laser element;wherein said grating coupler operates as a laser cavity mirror and pump coupler.2. The laser according to further comprising a silicon optical isolator.3. The laser according to wherein the grating coupler includes a first-order Bragg grating at an end opposite a laser output.4. The laser according to wherein the pump laser operates to pump a section of an erbium fiber amplifier.5. The laser according to which is not actively cooled during laser operation.6. The laser according to further comprising a silicon transceiver photonic integrated circuit to which the laser is coupled.7. The laser according to wherein the pump laser is configured to pump two or more lasers simultaneously.8. The laser according to further comprising a III-V waveguide that vertically couples the laser element to a silicon ring resonator. This application claims the benefit of U.S. Provisional Patent Application Ser. No. 61/638,660 filed Apr. 26, 2012 which is incorporated by reference in its entirety as if set forth at length herein.This disclosure relates generally to the field of optical communications and in particular to ...

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Номер записи: 40
07-03-2019 дата публикации

HORIZONTAL EXTERNAL-CAVITY LASER GEOMETRY

Номер: US20190074661A1
Автор: Shpunt Alexander, Soskind Yakov G., Sutton Andrew J.
Принадлежит:

An optoelectronic device includes a semiconductor substrate and a vertical-cavity surface-emitting laser (VCSEL) light source formed on the substrate and configured to emit coherent light at a predefined wavelength along a beam axis perpendicular to a surface of the substrate. A block of a transparent material is mounted on the surface of the substrate and forms, with the VCSEL, a resonant cavity at the predefined wavelength having an entrance face that is aligned with the beam axis and an exit face that is laterally displaced with respect to the entrance face along a cavity axis running parallel to the surface of the substrate. 1. An optoelectronic device , comprising:a semiconductor substrate;a vertical-cavity surface-emitting laser (VCSEL) light source formed on the substrate and configured to emit coherent light at a predefined wavelength along a beam axis perpendicular to a surface of the substrate; anda block of a transparent material comprising opposing first and second sides that are parallel to the surface of the substrate, such that the first side is adjacent to and mounted on the surface of the substrate, and the block of the transparent material forms, with the VCSEL, a resonant cavity at the predefined wavelength having an entrance face on the first side of the block of the transparent material that is aligned with the beam axis and an exit face on the second side of the block of the transparent material that is laterally displaced with respect to the entrance face along a cavity axis running between the first and second sides of the block of the transparent material in a direction parallel to the surface of the substrate.2. (canceled)3. The optoelectronic device of claim 1 , wherein the block of the transparent material comprises third and fourth sides claim 1 , not parallel to the first and second sides claim 1 , wherein the third side is configured to receive the emitted light through the entrance face and to reflect the received light along the ...

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Номер записи: 41
16-03-2017 дата публикации

EXTERNAL RESONATOR TYPE LASER DEVICE

Номер: US20170077676A1
Автор: SHINMORI Tatsunori
Принадлежит: USHIO DENKI KABUSHIKI KAISHA

An external resonator type laser device has an optical element that forms an external resonator with a semiconductor device by selecting and reflecting light of a specific wavelength range from light outputted from the semiconductor device; a supporting member formed of a material having a larger coefficient of linear expansion than the optical element; and a first mount interposed between the optical element and the supporting member, formed of a material having a coefficient of linear expansion closer to that of the optical element compared with that of the supporting member. The optical element is adhered to the first mount. The first mount is adhered to the supporting member by an adhesive having a Shore hardness of less than or equal to 65. 1. An external resonator type laser device comprising:an optical element that forms an external resonator with a semiconductor device by selecting and reflecting light of a specific wavelength range from light outputted from the semiconductor device;a supporting member formed of a material having a larger coefficient of linear expansion than that of the optical element; anda first mount interposed between the optical element and the supporting member, formed of a material having a coefficient of linear expansion closer to that of the optical element compared with that of the supporting member, whereinthe optical element is adhered to the first mount, andthe first mount is adhered to the supporting member by an adhesive having a Shore hardness of less than or equal to 65.2. The external resonator type laser device according to claim 1 , whereinthe first mount is adhered to the supporting member by a thermosetting adhesive, andthe optical element is adhered to the first mount by a photocurable adhesive.3. The external resonator type laser device according to claim 2 , whereinthe optical element includes:a wavelength selection element that selects and reflects light of the specific wavelength range; anda second mount interposed ...

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Номер записи: 42
14-03-2019 дата публикации

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER

Номер: US20190081454A1
Автор: KAKUNO Tsutomu, Saito Shinji, TSUMURA Akira, YAMANE Osamu
Принадлежит: KABUSHIKI KAISHA TOSHIBA

A distributed feedback semiconductor laser of includes a semiconductor stacked body and a first electrode. The semiconductor stacked body includes a first layer, an active layer that is provided on the first layer and is configured to emit laser light by an intersubband optical transition, and a second layer that is provided on the active layer. The semiconductor stacked body has a first surface including a flat portion and a trench portion; the flat portion includes a front surface of the second layer; the trench portion reaches the first layer from the front surface; the flat portion includes a first region and a second region; the first region extends along a first straight line; the second region extends to be orthogonal to the first straight line; and the trench portion and the second region outside the first region form a diffraction grating having a prescribed pitch along the first straight line. The first electrode is provided in the first region. 1. A distributed feedback semiconductor laser , comprising:a semiconductor stacked body including a first layer, an active layer, and a second layer, the active layer being provided on the first layer and being configured to emit laser light by an intersubband optical transition, the second layer being provided on the active layer; anda first electrode,the semiconductor stacked body having a first surface including a flat portion and a trench portion, the flat portion including a front surface of the second layer, the trench portion reaching the first layer from the front surface, the flat portion including a first region and a second region, the first region extending along a first straight line, the second region extending to be orthogonal to the first straight line, the trench portion and the second region outside the first region forming a diffraction grating having a prescribed pitch along the first straight line, andthe first electrode being provided in the first region.2. The distributed feedback ...

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Номер записи: 43
24-03-2016 дата публикации

FREQUENCY STABILIZED COHERENT BRILLOUIN RANDOM FIBER LASER

Номер: US20160087397A1
Автор: Bao Xiaoyi, Chen Liang, LU Ping, Lu Yang, PANG MENG, QIN ZENGGUANG
Принадлежит:

A high-finesse Fabry-Perot interferometer (FPI) is introduced into a coherent Brillouin RFL configuration to thereby produce a frequency stabilized random laser. 1. An apparatus comprising:a pump laser,a stimulated Brillouin scattering (SBS) gain fiber for producing stimulated Brillouin Stokes light,a Rayleigh scattering (RS) feedback fiber,a Fabry-Perot interferometer (FPI),wherein the apparatus produces a random laser output from the stimulated Brillouin Stokes light,wherein in the SBS and RS form a coherent Brillouin RFL configuration,wherein the Fabry-Perot interferometer (FPI) is optically connected to the coherent Brillouin RFL configuration, andwherein the Fabry-Perot interferometer (FPI) is configured to frequency stabilize the random laser output by optically interacting with the coherent Brillouin RFL configuration.2. The apparatus of claim 1 , wherein the pump laser has a linewidth of 500 kHz.3. The apparatus of claim 1 , wherein the SBS gain fiber has a length of 2 to 25 km.4. The apparatus of claim 1 , wherein the random laser output has a power of 2.5 to 20 mW.5. The apparatus of claim 1 , wherein the pump laser is a frequency stabilized semiconductor laser (FSSL).6. The apparatus of claim 5 , wherein said FSSL has a linewidth of 500 kHz. This application claims benefit of priority to U.S. Provisional Patent Application No. 61/880,646, filed Sep. 20, 2013 which is incorporated by reference in its entirety.1. Field of the InventionThe present invention relates to random fiber lasers. (RFLs).2. Related ArtDespite its unique characteristics and lasing mechanisms, the field of random fiber lasers (RFLs), which is based on multiple optical scattering in a disordered gain medium, remains young with few realized applications. This is largely due to the lack of lasing directionality which creates difficulty in achieving a stable, high-quality laser in bulk materials.According one broad aspect, the present invention provides an apparatus comprising: a pump ...

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Номер записи: 44
24-03-2016 дата публикации

Laser Oscillation Device

Номер: US20160087403A1
Автор: Noriyasu Kiryuu, Taizo Eno, Yuuichi Yoshimura
Принадлежит: Topcon Corp

A laser oscillation device comprises a light emitting unit for projecting a pump laser beam, a laser medium for absorbing the pump laser beam and for emitting a spontaneous emission light, a saturable absorber for absorbing the spontaneous emission light and for emitting a pulsed light, and a holder for holding the laser medium in a close contact state, wherein a portion of the holder as appressed against at least one surface of the laser medium is made of a metal and the pump laser beam is projected to an edge portion of the laser medium as appressed against the holder.

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Номер записи: 45
23-03-2017 дата публикации

CONTINUOUS-WAVE PUMPED COLLOIDAL NANOCRYSTAL LASER

Номер: US20170085058A1
Автор: CHRISTODOULOU SOTIRIOS, Cingolani Roberto, Di Stasio Francesco, GRIM JOEL QUEDAR GE TIAN CHI, KRAHNE ROMAN MARK, Manna Liberato, MOREELS IWAN PHILEMON WILHELMUS
Принадлежит: FONDAZION ISTITUTO ITALIANO DI TECNOLOGIA

Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism. 1. Laser device comprising a film of colloidal nanocrystals of semiconductor material as a gain medium , wherein said nanocrystals are two-dimensional nanocrystals forming quantum wells for confinement of charge carriers in the nanocrystals and having a biexciton gain mechanism , the device being characterized in that said nanocrystals are adapted to provide strong confinement of the charge carriers in a thickness direction (z) of the nanocrystal and weak or no confinement of the charge carriers in each of two mutually orthogonal lateral directions (x , y) of the nanocrystal , orthogonal to the thickness direction (z).2. Device according to claim 1 , wherein the nanocrystals have a thickness comprised in the range of 1-5 nm.3. Device according to claim 1 , wherein the nanocrystals have a core/shell structure comprising a core part and a shell part of different semiconductor materials claim 1 , wherein the core part has a thickness comprised in the range of 1-5 nm.4. Device according to claim 1 , wherein the nanocrystals are of semiconductor selected from the group consisting of selenides claim 1 , sulphides and tellurides of elements of groups I claim 1 , II claim 1 , III claim 1 , IV and V claim 1 , and their core/shell structures.5. Device according to claim 4 , wherein the nanocrystals further contain atomic dopants in a concentration of less than 10%.6. Device according to claim 1 , wherein the film of colloidal two-dimensional nanocrystals is arranged in a resonant cavity having a photonic gap which overlaps the emission peak of the colloidal two-dimensional nanocrystals.7. Device according to claim 1 , further comprising a continuous-wave optical ...

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Номер записи: 46
02-04-2015 дата публикации

OPTICALLY PUMPED VERTICAL EXTERNAL-CAVITY SURFACE-EMITTING LASER DEVICE

Номер: US20150092802A1
Автор: GRONENBORN STEPHAN, Miller Michael
Принадлежит: KONINKLIJKE PHILIPS N.V.

The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL () and several pump laser diodes (). The pump laser diodes () are arranged to optically pump the active region () of the VECSEL () by reflection of pump radiation () at a mirror element (). The mirror element () is arranged on the optical axis () of the VECSEL () and is designed to concentrate the pump radiation () in the active region () and to form at the same time the external mirror of the VECSEL (). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device. 2. The device according to claim 1 ,wherein said pump laser diodes are vertical cavity surface emitting lasers.3. The device according to claim 1 ,wherein said pump laser diodes are formed on a first chip and said layer stack of the vertical external-cavity surface-emitting laser is formed on a second chip, said first and second chip being mounted on a common submount or heat sink.4. The device according to claim 2 ,wherein said vertical cavity surface emitting lasers and said layer stack of the vertical external-cavity surface-emitting laser are formed on the same chip.5. The device according to claim 4 ,wherein said vertical cavity surface emitting lasers and said layer stack of the vertical external-cavity surface-emitting laser originate from the same layer sequence on the chip.6. The device according to claim 5 ,wherein said layer sequence comprises a first sequence of layers forming a layer structure of the vertical cavity surface emitting lasers and a second sequence of layers forming a layer structure of the layer stack of the vertical external-cavity surface-emitting laser, said first and second sequence of layers being separated by an etch stop layer.7. The device according to claim 1 ,wherein said mirror element comprises a central region which forms ...

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Номер записи: 47
12-03-2020 дата публикации

GENERATION OF HIGH-POWER SPATIALLY-RESTRUCTURABLE SPECTRALLY-TUNABLE BEAMS IN A MULTI-ARM-CAVITY VECSEL-BASED LASER SYSTEM

Номер: US20200083666A1
Автор: Fallahi Mahmoud, Hessenius Chris, Wright Ewan
Принадлежит:

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution. 1. A laser source comprising:a laser cavity network including first and second spatially-distinct cavity arms and a collinear portion, wherein the first and second spatially-distinct cavity arms share the collinear portion, a corresponding gain medium that includes one of (i) a VECSEL-based laser gain medium, (ii) a solid-state gain medium, and (iii) a fiber amplifier and that is configured to provide amplification of light at a corresponding wavelength;', 'and', 'at least one of a first optical system, disposed across an axis of the at least one of the first and second cavity arms to either refract or reflect light incident thereon while transforming a transverse distribution of said light that has traversed it, and', 'a second optical system, disposed across said axis between the corresponding gain medium and the collinear portion and characterized by optical losses at the corresponding wavelength;, 'at least one of the first and second cavity arms containing, intracavity,'} a first transverse mode distribution in a first portion of the laser cavity network between the corresponding gain medium and the second optical system,', 'a second transverse mode distribution in a second portion of the laser cavity network between the second optical system and the collinear portion, and', 'a third transverse mode distribution in a ...

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Номер записи: 48
25-03-2021 дата публикации

VARIABLE CONFINEMENT HYBRID OSCILLATOR POWER AMPLIFIER

Номер: US20210091529A1
Автор: Bovington Jock T., PATEL Vipulkumar K., SIRIANI Dominic F., TRAVERSO Matthew J.
Принадлежит:

Described herein is a two chip photonic device (e.g., a hybrid master oscillator power amplifier (MOPA)) where a gain region and optical amplifier region are formed on a III-V chip and a variable reflector (which in combination with the gain region forms a laser cavity) is formed on a different semiconductor chip that includes silicon, silicon nitride, lithium niobate, or the like. Sides of the two chips are disposed in a facing relationship so that optical signals can transfer between the gain region, the variable reflector, and the optical amplifier. 1. A photonic device , comprising: a gain region configured to generate an optical signal;', 'an optical amplifier configured to amplify the optical signal;, 'a III-V semiconductor chip comprisinga substrate separate from the III-V semiconductor, the substrate comprising a variable reflector, wherein an input of the variable reflector is optically coupled to an output of the gain region and an output of the variable reflector is optically coupled to an input of the optical amplifier.2. The photonic device of claim 1 , further comprising a high reflective (HR) element disposed at a first end of the gain region that is opposite a second end of the gain region that is optically coupled to the variable reflector.3. The photonic device of claim 2 , wherein the HR element claim 2 , the gain region claim 2 , and the variable reflector form a cavity for a laser.4. The photonic device of claim 1 , wherein the output of the gain region and the input of the optical amplifier are optically coupled to a same facet of the III-V semiconductor chip claim 1 , and wherein the input and the output of the variable reflector are coupled to a same facet of the substrate.5. The photonic device of claim 1 , further comprising:a first supermode filtering waveguide (SFW) disposed in the gain region; anda second SFW disposed in the optical amplifier, wherein the first and second SFWs comprises a first optical waveguide formed in a ridge that is ...

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Номер записи: 49
21-03-2019 дата публикации

HYBRID SILICON LASERS AND AMPLIFIERS WITH 2D PHOSPHORENE FILM

Номер: US20190089123A1
Автор: Husko Chad
Принадлежит:

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices. 1. A photonic device comprising:a substrate formed of a semiconductor material, the substrate having a resonator cavity formed therein, the substrate having a mounting surface; anda two dimensional material disposed on the mounting surface of the substrate and extending over the resonator cavity, the two dimensional material being formed of one or more atomic layers of phosphorene, wherein the two dimensional material is configured to provide a photonic gain region for photons propagating in the resonator cavity of the substrate, such that upon external pumping the two dimensional material produces a photon emission.2. The photonic device of claim 1 , wherein the substrate is a Silicon substrate.3. The photonic device of claim 2 , wherein the resonator cavity is a photonic crystal resonator formed in the Silicon substrate.4. The photonic device of claim 2 , wherein the resonator cavity is a distributed Bragg reflector resonator formed in the Silicon substrate.5. The photonic device of claim 2 , wherein the resonator cavity is a distributed feedback laser resonator formed in the Silicon substrate.6. The photonic device of claim 1 , wherein the two dimensional material comprises at least 1 atomic layer of phosphorene (BP).7. The photonic device of claim 6 , wherein the two dimensional material comprises 2-10 atomic layers of phosphorene (BP).8. The photonic device of claim 6 , wherein the two dimensional material comprises 10-100 atomic layers of phosphorene (BP).9. The photonic device of claim 6 , wherein the two dimensional material comprises 10-500 atomic layers of phosphorene (BP).10. ...

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Номер записи: 50
21-03-2019 дата публикации

TUNABLE LASER FOR COHERENT TRANSMISSION SYSTEM

Номер: US20190089132A1
Автор: Soda Haruhisa
Принадлежит:

A tunable laser device is described. In one example, the tunable laser device includes an adaptive ring mirror, a gain waveguide, a loop mirror waveguide, and a booster amplifier waveguide. The gain waveguide and the boost amplifier waveguide can be formed in a semiconductor optical amplifier (SOA) region of the tunable laser device, and the adaptive ring mirror and the loop mirror waveguide can be formed in a silicon photonics region of the tunable laser device. The adaptive ring mirror includes a phase shifter optically coupled between a number of MMI couplers. By inducing a phase shift using the phase shifter, the wavelength of the output of the tunable laser device can be altered or adjusted for use in coherent fiber-optic communications, for example, among other applications. 1. A tunable laser device , comprising:an adaptive ring mirror;a gain waveguide optically coupled to the adaptive ring mirror;a loop mirror optically coupled to the gain waveguide; anda booster amplifier optically coupled to the loop mirror at one end and adapted to provide a laser output of the tunable laser device at another end, wherein:the gain waveguide and the boost amplifier are formed in a semiconductor optical amplifier (SOA) region of the tunable laser device; andthe adaptive ring mirror and the loop mirror are formed in a silicon photonics region of the tunable laser device.2. The tunable laser device of claim 1 , wherein the adaptive ring mirror comprises:a number of multimode interference (MMI) couplers each comprising a single input, double output MMI coupler, wherein:a first output of a first MMI coupler among the MMI couplers is optically coupled to an input of a second MMI coupler among the MMI couplers; anda second output of the first MMI coupler is optically coupled to an input of a third MMI coupler among the MMI couplers.3. The tunable laser device of claim 2 , wherein the adaptive ring mirror further comprises:a number of linear waveguides optically coupled to outputs ...

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Номер записи: 51
30-03-2017 дата публикации

EXTERNAL CAVITY TYPE TUNABLE WAVELENGTH LASER MODULE FOR TO-CAN PACKAGING

Номер: US20170093118A1
Автор: LEE Hak Kyu, PARK Joon Oh, SEO Jun Kyu, Shin Jang Uk
Принадлежит:

Provided is a tunable wavelength laser module including: an external cavity type light source generating broadband light; an optical waveguide; a Bragg grating formed in the optical waveguide; a heater provided above the optical waveguide in which the Bragg grating is formed and adjusting a reflection band of the Bragg grating by a thermo-optic effect; a direction change waveguide region changing direction of optical signals obtained by the adjusted reflection band of the Bragg grating, by a predetermined angle; a -degree reflection part transmitting some of the optical signals direction-changed by the direction change waveguide region and escaping from the optical waveguide therethrough and reflecting the others of the optical signals in a vertical upward direction thereby; and a lens making the optical signals reflected in the vertical upward direction by the -degree reflection part collimated light or convergent light. 1. An external cavity type tunable wavelength laser module comprising:an external cavity type light source generating broadband light;an optical waveguide to which the broadband light output from the light source is input;a Bragg grating formed in the optical waveguide;a heater provided above the optical waveguide in which the Bragg grating is formed and adjusting a reflection band of the Bragg grating by a thermo-optic effect;a direction change waveguide region changing direction of optical signals obtained by the adjusted reflection band of the Bragg grating, by a predetermined angle, to output direction-changed optical signals;a 45-degree reflection part transmitting some of the direction-changed optical signals escaping from the optical waveguide therethrough and reflecting a remainder of the direction-changed optical signals in a vertical upward direction thereby; anda lens making the direction-changed optical signals reflected in the vertical upward direction by the 45-degree reflection part collimated light or convergent light.2. The ...

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Номер записи: 52
30-03-2017 дата публикации

EXTERNAL-RESONATOR-TYPE LIGHT-EMITTING DEVICE

Номер: US20170093126A1
Автор: Ejiri Tetsuya, Kondo Jungo, YAMAGUCHI Shoichiro
Принадлежит: NGK Insulators, Ltd.

An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating the semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face on which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. 1. An external resonator type light-emitting device comprising a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with said light source:wherein said light source comprises an active layer oscillating said semiconductor laser light; andwherein said grating element comprises an optical waveguide and a plurality of Bragg gratings formed in said optical waveguide,said optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted,2. The device of claim 1 ,wherein said Bragg gratings have wavelength regions, respectively, in which reflectances of said Bragg gratings are higher than a reflectance at an emitting end of said light source, respectively; andwherein said wavelength regions of said Bragg gratings having central wavelengths adjacent to each other are continuous.3. The device of claim 2 ,wherein said reflectances of said Bragg gratings having said central wavelengths adjacent to each other are equal to each other at predetermined wavelengths, respectively, andwherein a minimum value of a grating reflectance necessary for laser oscillation in an external resonator mode is not less than said reflectance at said emitting end of said light source, and is not more than each of said reflectances of ...

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Номер записи: 53
30-03-2017 дата публикации

EXTERNAL-RESONATOR-TYPE LIGHT-EMITTING DEVICE

Номер: US20170093127A1
Автор: Ejiri Tetsuya, Kondo Jungo, YAMAGUCHI Shoichiro
Принадлежит: NGK Insulators, Ltd.

An external resonator type light-emitting device includes a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with the light source. The light source includes an active layer oscillating said semiconductor laser light. The grating element includes an optical waveguide and a plurality of Bragg gratings formed in the optical waveguide. The optical waveguide includes an incident face to which the semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted. A half value reflectance Ris larger than a reflectance Rat an emitting end of the light source. A half value reflectance Ris 3% or larger. A combined reflectance is not less than the half value reflectance Rin a wavelength region Δλ. The wavelength region Δλis continuous over 10 nm or more and 30 nm or less, provided that a half value reflectance is defined as 50 percent of a maximum value Rmax of the combined reflectance of the Bragg gratings. 1. An external resonator type light-emitting device comprising a light source oscillating a semiconductor laser light and a grating element configuring an external resonator together with said light source:wherein said light source comprises an active layer oscillating said semiconductor laser light;wherein said grating element comprises an optical waveguide and a plurality of Bragg gratings formed in said optical waveguide, said optical waveguide comprising an incident face to which said semiconductor laser light is incident and an emitting face from which an emitting light having a desired wavelength is emitted, and said Bragg gratings having periods different from each other;{'sub': 50', '2, 'wherein a half value reflectance Ris larger than a reflectance Rat an emitting end of said light source;'}{'sub': '50', 'wherein said half value reflectance Ris 3% or larger; and'}{'sub': 50', '50', '50', '50, 'wherein a combined reflectance of said ...

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Номер записи: 54
07-04-2016 дата публикации

LASER APPARATUS AND INFORMATION ACQUISITION APPARATUS USING THE SAME

Номер: US20160099550A1
Автор: Okamoto Kohei
Принадлежит:

A laser apparatus includes an active medium, a first reflection portion, a second reflection portion, a first laser array including a plurality of semiconductor lasers, a third reflection portion configured to reflect at least part of light emitted from the first laser array and transmitted through the active medium, and a fourth reflection portion configured to transmit at least part of light emitted from the first laser array, and to reflect at least part of light reflected by the third reflection portion and transmitted through the active medium. The fourth reflection portion is disposed across the plurality of semiconductor lasers including respective light-emitting regions of the plurality of semiconductor lasers of the first laser array. 1. A laser apparatus comprising:an active medium;a resonance unit including a first reflection portion and a second reflection portion which are configured to resonate light emitted from the active medium;a first laser array including a plurality of semiconductor lasers configured to emit light for exciting the active medium from a direction different from a resonance direction of the resonance unit;a third reflection portion configured to reflect at least part of light emitted from the first laser array and transmitted through the active medium; anda fourth reflection portion disposed between the active medium and the first laser array and configured to transmit at least part of light emitted from the first laser array, and to reflect at least part of light reflected by the third reflection portion and transmitted through the active medium,wherein the fourth reflection portion is disposed across the plurality of semiconductor lasers including respective light-emitting regions of the plurality of semiconductor lasers of the first laser array.2. The laser apparatus according to claim 1 , wherein the fourth reflection portion constitutes a part of the semiconductor lasers of the first laser array.3. The laser apparatus according ...

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Номер записи: 55
19-03-2020 дата публикации

LASER DEVICE ON THE BASIS OF A PHOTONIC CRYSTAL HAVING PILLAR-SHAPED OR WALL-SHAPED SEMICONDUCTOR ELEMENTS, AND METHODS FOR THE OPERATION AND PRODUCTION THEREOF

Номер: US20200091682A1
Автор: GEELHAAR Lutz, GIUNTONI Ivano
Принадлежит:

The invention relates to a laser device () comprising a substrate (), on the surface of which an optical waveguide () is arranged, which has an optical resonator () with such a resonator length that at least one resonator mode forms a stationary wave in the resonator (), and an amplification medium that is arranged on a surface of the optical waveguide (), wherein the amplification medium comprises a photonic crystal () having a plurality of column- and/or wall-shaped semiconductor elements () which are arranged periodically on the surface of the optical waveguide () while protruding from the optical waveguide (), and wherein the photonic crystal () is designed to optically interact with the at least one resonator mode of the optical resonator () and to amplify light having a wavelength of the at least one resonator mode of the optical resonator (). The invention also relates to methods for the operation and production of the laser device. 1. A laser , comprising:a substrate, on a surface of which is arranged an optical waveguide, which includes an optical resonator with a resonator length such that at least one resonator mode in the optical resonator forms a standing wave, andan amplification medium, which is arranged on a surface of the optical waveguide,whereinthe amplification medium comprises a photonic crystal having a plurality of semiconductor elements, which have at least one of a pillar-shape and a wall-shape and which are arranged in a periodic manner, protruding from the optical waveguide, on the surface of the optical waveguide, andthe photonic crystal is configured for an optical interaction with the at least one resonator mode of the optical resonator and for an amplification of light at a wavelength of the at least one resonator mode of the optical resonator.2. The laser device according to claim 1 , whereinthe photonic crystal is arranged on the surface of the optical waveguide, which surface runs parallel to the surface of the substrate, and the ...

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Номер записи: 56
16-04-2015 дата публикации

THERMO-OPTICALLY TUNABLE LASER SYSTEM

Номер: US20150103851A1
Автор: Ma Eugene Yi-Shan, Marshall Charles M.
Принадлежит:

A tunable laser has a solid state laser medium having an optical gain region and generates coherent radiation through a facet. A lens collects the coherent radiation and generates a collimated light beam. Components of an external cavity include a reflective surface and an optical filter, the reflective surface reflecting the collimated beam back to the lens and the laser medium, the optical filter positioned between the reflective surface and the lens and having two surfaces with a thermally tunable optical transmission band within the optical gain region of the laser medium. The optical filter (1) transmits a predominant portion of the collimated beam at a desired wavelength of operation, and (2) specularly reflects a remaining portion of the collimated beam from each surface, the collimated beam being incident on the optical filter such that the reflected collimated beams propagate at a non-zero angle with respect to the incident collimated beam. 2. The tunable laser of claim 1 , wherein the pulse of the laser medium coherent optical signal is created by an electronic pulse with a low duty cycle and optical power of the tunable laser output increases following the pulse.3. The tunable laser of claim 1 , wherein the optical gain region of the solid state laser medium has a wavelength region of lower optical gain interspersed between wavelength regions of higher optical gain.4. The tunable laser of wherein the wavelength selection device is an etalon with a free spectral range and a width of the wavelength region of higher optical gain is less than the free spectral range.5. A method of tuning an external cavity semiconductor laser claim 3 , comprising:(1) setting a first operating condition of a wavelength selection device within the external cavity to select a first optical feedback selection wavelength and a first lasing wavelength of continuous wave laser operation,(2) changing to a second operating condition of the wavelength selection device within the ...

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Номер записи: 57
01-04-2021 дата публикации

SYSTEMS AND METHODS FOR CONTROLLING LASER PULSING

Номер: US20210098959A1
Автор: Bull Peter, CHENG Brian, HASENBERG Thomas C., KANG Hyun Wook, Xuan Rongwei Jason, YANG Baocheng, Yang Xirong, Zhang Jian James
Принадлежит: BOSTON SCIENTIFIC SCIMED, INC.

Techniques are provided for controlling an output laser pulse signal of a medical device. A control device defines a time duration of capacitive discharge to a laser device. The time duration corresponds to an intended energy of the output laser pulse signal. The control device generates a plurality of sub-pulse control signals. The sub-pulse control signals define a series of capacitive discharge events of the capacitor bank. The control device modulates one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration. 1. A method for controlling an output laser pulse signal of a medical device , the method comprising:at a control device, defining a time duration of capacitive discharge of a capacitor bank to a laser device, wherein the time duration corresponds to an intended energy of the output laser pulse signal;generating a plurality of sub-pulse control signals that define a series of capacitive discharge events of the capacitor bank; andmodulating one or more of a sub-pulse control signal period or a sub-pulse time duration of the sub-pulse control signals to modify the capacitive discharge of the capacitor bank to the laser device during the time duration.2. The method of claim 1 , further comprising modifying the time duration of capacitive discharge by modifying the plurality of sub-pulse control signals.3. The method of claim 2 , wherein modifying the time duration comprises modifying the time duration between a start of a first sub-pulse control signal and an end of a last sub-pulse control signal.4. The method of claim 1 , wherein the sub-pulse control signal period corresponds to time elapsed between a start of the first sub-pulse control signal and a start of a subsequent sub-pulse control signal.5. The method of claim 1 , wherein the sub-pulse time duration corresponds to time elapsed between a start of ...

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Номер записи: 58
01-04-2021 дата публикации

ISOLATOR-FREE LASER

Номер: US20210098970A1
Автор: Matsui Yasuhiro
Принадлежит:

An isolator-free laser includes an etalon, an active section, and a low reflection (LR) mirror. The etalon includes a passive section of the isolator-free laser and a reflection profile. The active section is coupled end to end with the passive section. The active section has a distributed feedback (DFB) grating and a lasing mode at a long wavelength side of a reflection peak of the reflection profile. The LR mirror is formed on a front facet of the passive section. The long wavelength edge of the reflection peak of the reflection profile may have a slope greater than 0.006 GHz. A RIN of the isolator-free laser under −20 decibels (dB) external cavity optical feedback may be less than or equal to −130 dBc/Hz. 1. An isolator-free laser , comprising:an etalon, the etalon comprising a passive section of the isolator-free laser and a reflection profile;{'sup': −1', '−1, 'an active section coupled end to end with the passive section, the active section having a distributed feedback (DFB) grating and a lasing mode at a long wavelength edge of a reflection peak of the reflection profile, the long wavelength edge of the reflection peak of the reflection profile having a slope greater than 0.006 gigahertz(GHz) at the lasing mode; and'}a low reflection (LR) mirror formed on a front facet of the passive section;wherein a relative intensity noise (RIN) of the isolator-free laser under −20 decibels (dB) external cavity optical feedback is less than or equal to −130 dBc/Hz.2. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −10 dB external cavity optical feedback is less than or equal to −130 dBc/Hz.3. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −5 dB external cavity optical feedback is less than or equal to −130 dBc/Hz.4. The isolator-free laser of claim 1 , wherein the RIN of the isolator-free laser under −20 dB external cavity optical feedback is less than or equal to −155 dBc/Hz.5. The isolator-free ...

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Номер записи: 59
28-03-2019 дата публикации

LASER DIODE ENHANCEMENT DEVICE

Номер: US20190097389A1
Автор: Gulses Alkan, KURTZ Russell
Принадлежит:

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs. 1. The laser of claim 15 , the laser further including a DBR mirror and at least one quantum well in the DBR mirror.2. The laser of claim 1 , including a laser beam output that is back propagated for emitting a large sized Gaussian beam with high encircled energy.3. The laser of claim 1 , wherein the DBR mirror has a plurality of GaAs/AlGaAs layers.4. The laser of wherein the quantum well is composed of AlGaAs/InGaAs.5. The laser of wherein the CGH comprises GaAs/AlGaAs.6. (canceled)7. The laser of wherein there are at least 20 cascaded CGHs.8. The laser of wherein there are more than 20 cascaded CGHs.9. The laser of where each CGH comprises GaAs/AlGaAs.10. (canceled)11. The laser of having a laser gain medium that is semiconductor.12. The laser of having a laser gain medium that is crystal.13. The laser of having a laser gain medium that is gas.14. A vertical cavity surface emitting semiconductor laser claim 15 , with an intra-cavity wavefront shaping device comprising a plurality of CGHs at one end of the cavity claim 15 , with each CGH having a plurality of cascaded layers with a buffer layer between each cascaded layer.15. A vertical cavity surface emitting semiconductor laser claim 15 , comprising a plurality of wavefront shaping devices claim 15 , within a cavity said wavefront shaping devices being diffractive elements consisting of a plurality of interior CGHs at an end of the cavity; said CGHs each having a plurality of cascaded layers with a buffer layer between each layer.16. The device of wherein the diffractive elements comprises 2-20 layers of AlGaAs with buffer layers ...

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Номер записи: 60
28-03-2019 дата публикации

ADJUSTMENT IMAGE GENERATING DEVICE, ADJUSTMENT IMAGE GENERATING METHOD, AND STORAGE MEDIUM HAVING PROGRAM STORED THEREIN

Номер: US20190098265A1
Автор: Takahama Toru
Принадлежит:

An adjustment image for facilitating adjustment is generated. An image display device according to an embodiment of the invention includes a semiconductor laser, a wheel, an adjustment image generating unit, and a projection unit. The semiconductor laser emits light. The wheel includes a first area and a second area as areas for adjusting color components of the light emitted from the semiconductor laser. The adjustment image generating unit generates an adjustment image in which a first color formed using a section adjacent to a boundary between the first area and the second area and a second color formed not using the section adjacent to the boundary and having color components close to the first color are arranged adjacent to each other. The projection unit projects the adjustment image generated by the adjustment image generating unit. 2. The adjustment image generating device according to claim 1 , wherein the processor is configured to:select colors which are different by one gradation in color components adjusted in the first area and the second area respectively, as the first color and the second color and generates the adjustment image.3. The adjustment image generating device according to claim 1 , wherein the processor is configured to:generate an adjustment image in which the first color on the first area side using a section on the first area side adjacent to the boundary and the second color on the first area side not using a section on the first area side adjacent to the boundary are arranged as a first color set andthe first color on the second area side using a section on the second area side adjacent to the boundary and the second color on the second area side not using a section on the second area side adjacent to the boundary are arranged as a second color set to be closer to the first color set.4. The adjustment image generating device according to claim 2 , wherein the processor is configured to:generate an adjustment image in which the first ...

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Номер записи: 61
14-04-2016 дата публикации

LIGHT GUIDING FOR VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER

Номер: US20160104998A1
Автор: Debernardi Pierluigi, Felder Ferdinand, Fill Matthias, Zogg Hans
Принадлежит:

The present invention relates to an active gain layer stack () for a vertical emitting laser device, the active gain layer stack () comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa () extending in a vertical direction. A transversally neighboring region () that at least partly surrounds said mesa () has a second refractive index (n)—At least part of said mesa () has a first refractive index (n) and a part of the neighboring region () transversally adjacent to said part of the mesa () has second refractive index (n 2)—Said first refractive index (n) is higher than said second refractive index (n) and a diameter in transversal direction of said mesa () is chosen such that a transversal confinement factor in the active gain layer stack () is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa () may be grown on a single substrate (). Anti-guiding is prevented by the lower refractive index of the surrounding material () improving the single transversal mode operation. 1. An active gain layer stack for a vertical emitting laser device , the active gain layer stack comprising a semiconductor material ,wherein the active gain layer stack is structured such that it forms at least one mesa extending in a vertical direction and a transversally neighboring region at least partly surrounding said mesa,{'sub': 1', '2', '1', '2, 'wherein at least part of said mesa has a first refractive index (n) and wherein a part of the neighboring region transversally adjacent to said part of the mesa has a second refractive index (n), wherein said first refractive index (n) is higher than said second refractive index (n), and'}{'sub': '1', 'wherein a ...

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Номер записи: 62
23-04-2015 дата публикации

OPTICALLY PUMPED SOLID STATE LASER DEVICE WITH SELF-ALIGNING PUMP OPTICS

Номер: US20150110146A1
Автор: GRONENBORN STEPHAN
Принадлежит:

The present invention relates to an optically pumped solid state laser device, comprising a solid state laser medium (-) in a laser resonator. Several pump laser diodes () are arranged to optically pump said solid state laser medium (-) by reflection of pump radiation at a mirror element () arranged on the optical axis of the laser resonator. The mirror element () is designed to direct said pump radiation to the solid state laser medium (-) and to form at the same time one of the resonator mirrors of the laser resonator. With this design of the solid state laser device an easy alignment of the pump optics is achieved. The proposed solid state laser device can be realized in a compact form. 1. An optically pumped solid state laser device comprising:a solid state laser medium in a laser resonator and one or several pump laser diodes, said pump laser diodes being arranged to optically pump said solid state laser medium by reflection of pump radiation at a mirror element,wherein said mirror element is arranged on an optical axis of said laser resonator and is designed to reflect said pump radiation to the solid state laser medium and to form at the same time a resonator mirror of the laser resonator, wherein said mirror element comprises a body of a material optically transparent for laser radiation, said resonator mirror being formed in a central region of a back surface of the body,wherein a lens is formed in a central region of a front surface of the body facing the solid state laser medium, said resonator mirror and said lens being arranged and designed to form a resonator with a second resonator mirror on an opposite side of the solid state laser medium.2. The device according to claim 1 , wherein said mirror element comprises a central region which forms said resonator mirror and an outer region which is designed to reflect said pump radiation to the solid state laser medium.3. The device according to claim 2 , wherein said central region and said outer region are ...

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Номер записи: 63
02-06-2022 дата публикации

SYSTEM AND METHOD FOR TOPOLOGICAL LASERS GENERATING AND MULTIPLEXING OPTICAL BEAMS WITH UNBOUNDED ORBITAL ANGULAR MOMENTA

Номер: US20220173574A1
Автор: BAHARI Babak, KANTE Boubacar
Принадлежит:

An optical integrated light source includes a plurality of topological ring resonators. Each of the topological ring resonators is defined by an interface between two distinct periodic structures having different topological invariants such that a one-way edge mode may be excited along the interface. A magnetic material is arranged to interact with the plurality of topological ring resonators such that the optical integrated light source is structured and configured to generate plural beams each carrying large orbital angular momentum. 1. An optical integrated light source , comprising:a plurality of topological ring resonators, each of the topological ring resonators being defined by an interface between two distinct periodic structures having different topological invariants such that a one-way edge mode may be excited along the interface; anda magnetic material arranged to interact with the plurality of topological ring resonators such that the optical integrated light source is structured and configured to generate plural beams each carrying large orbital angular momentum.2. The light source of claim 1 , wherein the topological ring resonators are each concentrically arranged with respect to one another.3. The laser source of claim 1 , wherein the magnetic material is configured to break the time-reversal symmetry in the topological ring resonators upon application thereto of an external magnetic field.4. The laser source of claim 1 , wherein the topological ring resonators are configured to emit light upon being optically pumped.5. The laser source of claim 1 , wherein the topological ring resonators are configured to emit light upon being electrically pumped.6. The laser source of claim 1 , wherein the two distinct periodic structures defining the topological ring resonators each include a multiple quantum well (MQW) structure.7. The laser source of claim 6 , wherein the multiple quantum well structure includes an InGaAsP quantum well material.8. The laser ...

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Номер записи: 64
19-04-2018 дата публикации

MID-INFRARED LASER SYSTEM, MID-INFRARED OPTICAL AMPLIFIER, AND METHOD OF OPERATING A MID-INFRARED LASER SYSTEM

Номер: US20180109078A1
Автор: Bernier Martin, DUVAL Simon, FORTIN Vincent, GAUTHIER Jean-Christophe, Vallee Real
Принадлежит:

The mid-infrared laser system has an amplifier including at least one pump laser adapted to generate a pump laser beam and a length of fiber made of a low phonon energy glass and having at least one laser-active doped region between a first end and a second end, and a seed laser to generate a seed laser beam having a seed optical spectrum in the mid-infrared. The seed laser beam is launched into the first end to generate a mid-infrared laser beam outputted from the second end via stimulated emission upon pumping of the at least one laser-active doped region with the pump laser beam. When the power of the pump laser exceeds a spectrum modification threshold, the mid-infrared laser beam has an output optical spectrum being broadened relative to the seed optical spectrum. 1. A mid-infrared laser system comprising: at least one pump laser adapted to generate a pump laser beam; and', 'a length of fiber made of a low phonon energy glass and having at least one laser-active doped region between a first end and a second end;, 'an amplifier including'}a seed laser adapted to generate a seed laser beam having a seed optical spectrum in the mid-infrared portion of the electromagnetic spectrum, the seed laser beam being launched into the first end to generate a mid-infrared laser beam outputted from the second end via stimulated emission upon pumping of the at least one laser-active doped region with the pump laser beam; anda spectrum modification threshold above which the power of the pump laser beam causes the mid-infrared laser beam to have an output optical spectrum being at least one of broadened and shifted relative to the seed optical spectrum.2. The mid-infrared laser system of wherein the seed laser beam has a seed wavelength equal or above 2.5 μm.3. The mid-infrared laser system of wherein the output optical spectrum of the mid-infrared laser beam includes at least 80% of its optical power at wavelengths longer than 3.0 μm.4. The mid-infrared laser system of wherein ...

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Номер записи: 65
09-06-2022 дата публикации

LASER WITH HEXAGONAL SEMICONDUCTOR MICRODISK IN DOUBLE-TRIANGULAR WHISPERING-GALLERY OPTICAL RESONANCE MODE

Номер: US20220181848A1
Автор: Cao Bing, CHEN Wangyibo, HE Geng, LUO Anlin, Wang Qinhua, XIONG Xianjie, XU Liyue, YUAN Zhihao, Zhou Hao
Принадлежит:

A method for numerical control milling, forming and polishing of a large-diameter aspheric lens to solve long time-consuming and severe tool wear in the machining of a meter-scale large-diameter aspheric surface is disclosed. An aspheric surface is discretized into a series of rings with different radii, and the rings are sequentially machined through generating cutting by using an annular grinding wheel tool; the rings are equally spaced, there are a total of N rings, and the width of any ring is jointly determined by the Nring, the (N-1)th ring, positioning accuracy, and a generatrix equation of the aspheric lens, and the nring has a curvature radius of Rn =sqrt(R0-k*(n*dx)); and the aspheric surface is enveloped by a large number of rings. The tool used for machining has a diameter greater than the semi-diameter of the aspheric surface, and contact area between tool and workpiece surface is rings. 1. A laser with a hexagonal semiconductor microdisk in a double-triangular whispering-gallery optical resonance mode , comprising a reflecting substrate , a hexagonal semiconductor microdisk , and a laser , wherein the hexagonal semiconductor microdisk is arranged on the reflecting substrate; emergent light of the laser is perpendicular to a surface of the hexagonal semiconductor microdisk and irradiates any one of six corners of the hexagonal semiconductor microdisk; and laser light in the double-triangular whispering-gallery optical resonance mode horizontally exits from one of six side walls of the hexagonal semiconductor microdisk.2. The laser with a hexagonal semiconductor microdisk in a double-triangular whispering-gallery optical resonance mode according to claim 1 , wherein the laser is a high power laser claim 1 , a wavelength of emergent laser light is smaller than that of a band gap of a hexagonal semiconductor microdisk material used claim 1 , and the hexagonal semiconductor microdisk has a regular hexagonal surface.3. The laser with a hexagonal ...

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Номер записи: 66
09-06-2022 дата публикации

LASER WITH HEXAGONAL SEMICONDUCTOR MICRODISK

Номер: US20220181849A1
Автор: Cao Bing, CHEN Wangyibo, HE Geng, LUO Anlin, Wang Qinhua, XIONG Xianjie, XU Liyue, YUAN Zhihao, Zhou Hao
Принадлежит:

A laser with a hexagonal semiconductor microdisk to solve the problems of a low quality factor of a hexagonal whispering-gallery mode and light exiting difficulty of a triangular whispering-gallery mode is disclosed. Based on physical characteristics of stimulated radiation of gain materials with a high refractive index, the apparatus uses a distributed Bragg reflection layer to reduce an optical loss of a microcavity laser, and uses a hexagonal semiconductor microdisk as an optical resonator and laser gain material. As an optical pump source, the laser provides an optical gain, and when the gain exceeds a microcavity laser threshold, generates laser light for exiting. By controlling a laser spot of the pump source to be located at a corner of the hexagonal microdisk, the laser light in a double-triangular whispering-gallery optical resonance mode is generated after stimulated radiation for exiting. 1. A laser with a hexagonal semiconductor microdisk , comprising a reflecting substrate , a hexagonal semiconductor microdisk , and a laser , wherein the hexagonal semiconductor microdisk is arranged on the reflecting substrate; emergent light of the laser is perpendicular to a surface of the hexagonal semiconductor microdisk and irradiates any one of six corners of the hexagonal semiconductor microdisk; side walls of the hexagonal semiconductor microdisk are flat , one of the side walls is a front cavity , and the other five side walls are rear cavities;surfaces of the rear cavities are provided with distributed Bragg reflection layers, and laser light in a double-triangular whispering-gallery optical resonance mode exits from the front cavity.2. The laser with a hexagonal semiconductor microdisk according to claim 1 , wherein a distributed Bragg reflection layer is also arranged between the hexagonal semiconductor microdisk and the reflecting substrate.3. The laser with a hexagonal semiconductor microdisk according to claim 1 , wherein several layers of quantum well ...

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Номер записи: 67
09-06-2022 дата публикации

OPTICAL KIT AND OPTICAL DEVICE

Номер: US20220181851A1
Автор: Dougakiuchi Tatsuo, Kawada Yoichi
Принадлежит: HAMAMATSU PHOTONICS K.K.

An optical kit includes a base including a main surface; and a holding unit provided on the main surface to hold an optical system. The holding unit includes a lens holding unit that holds a lens, a reflector holding unit that holds a corner reflector, a first aperture member holding unit that holds a first aperture member, a second aperture member holding unit that holds a second aperture member, and a third aperture member holding unit that holds a third aperture member. The reflector holding unit includes a first mechanism that holds an entirety of the corner reflector so as to be rotatable along the main surface, and a second mechanism configured to adjust an optical axis of a diffracted light in each of a reflective diffraction grating and a mirror. 1. An optical kit forming an optical system including an external resonator of a laser light source that outputs a laser light , the kit comprising:a base including a main surface; anda holding unit provided on the main surface and configured to hold the optical system,wherein the optical system includes a lens into which the laser light is input in a first direction,a corner reflector including a reflective diffraction grating configured to reflect a diffracted light of the laser light, which has passed through the lens, in a second direction intersecting the first direction, and a mirror configured to reflect the diffracted light from the reflective diffraction grating in a third direction opposite to the first direction,a first aperture member disposed to form an optical aperture through which the laser light which has passed through the lens passes when the corner reflector is not installed, anda second aperture member and a third aperture member arranged in the third direction to form optical apertures through which the diffracted light from the corner reflector passes in order,the holding unit includes a lens holding unit configured to hold the lens,a reflector holding unit configured to hold the corner ...

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Номер записи: 68
27-04-2017 дата публикации

Vertical external cavity surface emitting laser devices allowing high coherence, high power and large tunability

Номер: US20170117684A1
Автор: Arnaud GARNACHE-CREUILLOT, Grégoire BEAUDOUIN, Isabelle Sagnes, Laurence FERRIERES, Mikhael MYARA, Stéphane DENET, Vincent Lecocq
Принадлежит: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS, INNOPTICS, Universite de Montpellier I

A laser device is provided for generating an optical wave at a laser frequency, including (i) a semiconductor element having a gain region with quantum wells, the gain region being located between a first mirror and an exit region defining an optical microcavity, (ii) a second mirror distinct from the semiconductor element and arranged so as to form with the first mirror an external optical cavity including the gain region, (iii) a pump for pumping the gain region so as to generate the optical wave, wherein the optical microcavity with the gain region and the external optical cavity are arranged so that a spectral ratio between the Half Width Half Maximum (HWHM) spectral bandwidth of the modal gain and a free spectral range of the external cavity in the range of 2 to 50.

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Номер записи: 69
18-04-2019 дата публикации

TUNABLE LASER DEVICE

Номер: US20190115723A1
Автор: Jung Moonil, KIM Hyochul, KIM Jineun, KIM Unjeong, PARK Yeonsang
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A tunable laser device is provided. The tunable laser device includes an active layer configured to generate first light by a first source; first and second reflective layers spaced apart from each other having the active layer disposed between the first reflective layer and the second reflective layer to form a resonance cavity; and a variable refractive index unit in the resonance cavity and having a refractive index being variable according to a second source, the second source being different from the first source. 1. A tunable laser device comprising:an active layer configured to generate first light by a first source;a first reflective layer and a second reflective layer spaced apart from each other and having the active layer disposed between the first reflective layer and the second reflective layer to form a resonance cavity; anda variable refractive index unit disposed in the resonance cavity and having a refractive index being variable according to a second source, the second source being different from the first source,wherein a wavelength of second light resonated in the resonance cavity among the first light generated in the active layer varies according to the refractive index of the variable refractive index unit.2. The tunable laser device of claim 1 , wherein the first source comprises at least one of an optical signal and third light.3. The tunable laser device of claim 1 , wherein the second source comprises at least one of heat claim 1 , fourth light claim 1 , and an electrical signal.4. The tunable laser device of claim 1 , wherein the variable refractive index unit comprises a material having the refractive index being variable according to the second source.5. The tunable laser device of claim 4 , wherein the material comprises at least one of LiNbO claim 4 , LiTaO claim 4 , potassium tantalate niobate (KTN) claim 4 , lead zirconate titanate (PZT) claim 4 , VO claim 4 , VOO claim 4 , EuO claim 4 , MnO claim 4 , CoO claim 4 , CoO claim 4 , ...

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Номер записи: 70
04-05-2017 дата публикации

LASER DEVICE, INFORMATION ACQUISITION DEVICE, AND IMAGING SYSTEM

Номер: US20170125975A1
Автор: Uchida Mamoru, Uchida Tatsuro
Принадлежит:

One or more laser devices, one or more information acquisition devices, one or more imaging systems, and one or more methods for use with same are provided. Embodiments of wavelength-tunable type surface emitting lasers including an active layer and excitation units and for exciting the surface emitting laser are included, and the excitation units excite the active layer of the surface emitting laser so that a carrier occupation state of an energy level that can oscillate different wavelength in different areas of the active layer of the surface emitting laser in the XY in-plane direction is obtained. 1. A laser device comprising:a wavelength-tunable type surface emitting laser including an active layer; andan excitation unit configured to excite the surface emitting laser, whereinthe excitation unit excites the active layer of the surface emitting laser so that a carrier occupation state of an energy level can oscillate different wavelength in different areas of the active layer of the surface emitting laser in an in-plane direction intersecting with a light output direction of the surface emitting laser.2. The laser device according to claim 1 , wherein{'sub': 1', '2', '1, 'the excitation unit includes a first exciting light source configured to emit light with peak wavelength λfor exciting the surface emitting laser and a second exciting light source configured to emit light with peak wavelength λdifferent from the peak wavelength λfor exciting the surface emitting laser, and'}the first exciting light source and the second exciting light source are provided so as to excite a first area and a second area, respectively, of the different areas of the active layer of the surface emitting laser.3. The laser device according to claim 2 , whereineach of the first exciting light source and the second exciting light source includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, andeach of the first ...

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Номер записи: 71
16-04-2020 дата публикации

TOPOLOGICAL INSULATOR LASER SYSTEM

Номер: US20200119524A1
Автор: BANDRES MOTOLA Miguel Angel, CHRISTODOULIDES Demetrios N., HARARI Gal, SEGEV Mordechai
Принадлежит:

A topological laser system is described. The laser system comprises an array of optical elements arranged in an array and coupled between them such that the array is configured for supporting one or more topological modes. The plurality of optical elements comprises optical elements carrying gain material configured for emitting optical radiation in response to pumping energy. The laser system further comprises a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; and at least one output port optically coupled to one or more of the optical elements associated with said topological mode. The at least one output ports is configured for extracting a portion of light intensity from said laser system. 1. A laser system comprising:an array of optical elements comprising optical elements comprising gain material, the optical elements of the array are optically coupled between them and are spatially arranged supporting at least one topological mode associated with certain spatial region of the array;a pumping unit configured to provide pumping of a group of the optical elements of the array within at least a portion of the spatial region corresponding with said topological mode; andat least one output port optically coupled to one or more of the optical elements associated with said topological mode, said at least one output ports being configured for extracting a portion of light intensity from said laser system.2. The laser system of claim 1 , wherein said array of optical elements is configured as a photonic crystal having a band structure associated with photonic states within said photonic crystal claim 1 , said band structure comprising one or more photonic states crossing a gap between bands of the photonic states; said one or more photonic states crossing said gap correspond with the at least one topological mode within the array.3. The ...

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Номер записи: 72
21-05-2015 дата публикации

METHOD AND SYSTEM FOR HYBRID INTEGRATION OF A TUNABLE LASER

Номер: US20150139256A1
Автор: Dallesasse John, Kozlovsky William, Krasulick Stephen B.
Принадлежит: SKORPIOS TECHNOLOGIES, INC.

A cable television transmitter includes a substrate including a silicon material, control electronics disposed in the substrate, and a gain medium coupled to the substrate. The gain medium includes a compound semiconductor material. The cable television transmitter also includes an optical modulator optically coupled to the gain medium and electrically coupled to the control electronics, a waveguide disposed in the substrate and optically coupled to the gain medium, a first wavelength selective element characterized by a first reflectance spectrum and disposed in the substrate, and a second wavelength selective element characterized by a second reflectance spectrum and disposed in the substrate. The cable television transmitter further includes an optical coupler disposed in the substrate and joining the first wavelength selective element, the second wavelength selective element, and the waveguide and an output mirror. 1. (canceled)2. A tunable laser comprising:a gain medium comprising a compound semiconductor material; anda substrate comprising a silicon material, defining a waveguide, and supporting the gain medium;a first tunable wavelength selective element disposed in the substrate and characterized by a first reflectance spectrum having a first plurality of reflectance peaks separated by a first spacing interval; anda second tunable wavelength selective element disposed in the substrate and characterized by a second reflectance spectrum having a second plurality of reflectance peaks separated by a second spacing interval that is different from the first spacing interval.3. The tunable laser of claim 2 , wherein a surface of the compound semiconductor material forms an output mirror claim 2 , and wherein the first and second tunable wavelength selective elements are optically coupled with the gain medium through the waveguide claim 2 , such that the first and second reflectance spectra constructively interfere at a single one of each of the first and second ...

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Номер записи: 73
11-05-2017 дата публикации

NONEQUILIBRIUM PULSED FEMTOSECOND SEMICONDUCTOR DISK LASER

Номер: US20170133825A1
Автор: Kilen Isak R., Koch Stephan W., Moloney Jerome V.
Принадлежит: The Arizona Board of Regents on Behalf of the University of Arizona

A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking. 1. A surface-emitting semiconductor laser system configured to operate in a mode-locked regime , the laser system comprising:an optical resonator having an optical axis; wherein said semiconductor gain medium is characterized by a gain spectrum, the gains spectrum having a bandwidth that includes a first wavelength,', 'wherein said semiconductor gain medium has a first multiple quantum well (MQW) unit, said first MQW unit defined by a sequence of at least three first quantum wells (QWs) that are spaced substantially non-equidistantly with respect to one another;, 'a semiconductor laser chip within the optical resonator, the semiconductor laser chip containing a semiconductor gain medium,'}anda pump source in operable communication with said semiconductor laser chip and configured to pump energy to the semiconductor gain medium to produce excited-state carriers in the first MQW unit,wherein said semiconductor laser system is configured to form a standing optical wave within said semiconductor laser chip at a frequency of the first wavelength, said standing optical wave having first and second immediately neighboring modes located along the optical axis within ...

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Номер записи: 74
18-05-2017 дата публикации

OPTICAL-COHERENCE-TOMOGRAPHY APPARATUS AND SURFACE-EMITTING LASER

Номер: US20170138720A1
Автор: Hori Yuichiro
Принадлежит:

An optical-coherence-tomography apparatus includes a light-source unit configured to emit light while changing a wavelength of the light; an optical interferometric system configured to split the light from the light-source unit into illuminating light to be applied to an object and reference light, and to generate interfering light from the illuminating light reflected by the object and the reference light; a photodetection unit configured to receive the interfering light, and an information-acquiring unit configured to acquire information on the object from the interfering light received by the photodetection unit. The light-source unit performs wavelength sweep by displacing a movable portion with an electrostatic force generated with the application of a voltage. The optical-coherence-tomography apparatus further includes a pull-in-detection unit configured to detect whether or not a pull-in effect is occurring on the movable portion of the light-source unit. 1. An optical-coherence-tomography apparatus comprising:a light-source unit configured to emit light while changing a wavelength of the light;an optical interferometric system configured to split the light from the light-source unit into illuminating light to be applied to an object and reference light, and to generate interfering light both from the illuminating light reflected by the object and the reference light;a photodetection unit configured to receive the interfering light; andan information-acquiring unit configured to acquire information on the object from the interfering light received by the photodetection unit,wherein the light-source unit includes a movable portion that is displaceable with an electrostatic force, the movable portion being used in performing wavelength sweep, andwherein the optical-coherence-tomography apparatus further includes a pull-in-detection unit configured to detect whether or not a pull-in effect is occurring on the movable portion of the light-source unit.2. The ...

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Номер записи: 75
14-08-2014 дата публикации

Organic semiconductor lasers by triplet managers

Номер: US20140226692A1
Автор: Stephen R. Forrest, Yifan ZHANG
Принадлежит: University of Michigan

A first device is provided. The device includes an organic semiconductor laser. The organic semiconductor laser further includes an optical cavity and an organic layer disposed within the optical cavity. The organic layer includes: an organic host compound; an organic emitting compound capable of fluorescent emission; and an organic dopant compound. The organic dopant compound may also be referred to herein as a “triplet manager.” The triplet energy of the organic dopant compound is lower than or equal to the triplet energy of the organic host compound. The triplet energy of the organic dopant compound is lower than or equal to the triplet energy of the organic emitting compound. The singlet energy of the organic emitting compound is lower than or equal to the singlet energy of the organic host compound.

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Номер записи: 76
26-05-2016 дата публикации

Apparatus and method for tunable generation of coherent radiation

Номер: US20160149371A1
Автор: Giulio Vampa, Paul Corkum, Thomas Brabec
Принадлежит: UNIVERSITY OF OTTAWA

A method and apparatus is disclosed for generating tunable attosecond-scale radiation pulses, with a frequency in range of ultraviolet to soft-X-ray, from a solid-state medium. The invention utilizes an intense laser pulse to drive a high harmonic generation (HHG) process in a solid state medium and a weak secondary field to control the HHG process. The weak secondary field has a frequency equal to the second harmonic of the intense laser pulse. The spatial, temporal and spectral properties of the HHG process and the emitted harmonic beam are tuned by adjusting the relative delay between the two fields and the intensity of the weak secondary field.

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Номер записи: 77
09-05-2019 дата публикации

PUMP ISOLATION BY POLARIZATION SPLITTING

Номер: US20190140421A1
Автор: Muendel Martin H., PLEWICKI Mateusz
Принадлежит:

An optical pump may include a polarization element to separate pump light into a first component beam and a second component beam, wherein the polarization element is to separate the pump light such that the first component beam has a first polarization and the second component beam has a second polarization that is different from the first polarization. The optical pump may include a gain medium to absorb a portion of the first component beam and a portion of the second component beam, and transmit an unabsorbed portion of the first component beam and an unabsorbed portion of the second component beam. The optical pump may include one or more optical elements to at least partially isolate a pump source from the unabsorbed portion of the first component beam and the unabsorbed portion of the second component beam. 1. An optical pump , comprising: 'wherein the polarization element is to separate the pump light such that the first component beam has a first polarization and the second component beam has a second polarization that is different from the first polarization;', 'separate pump light into a first component beam and a second component beam,'}, 'a polarization element to absorb a portion of the first component beam and a portion of the second component beam, and', 'transmit an unabsorbed portion of the first component beam and an unabsorbed portion of the second component beam; and, 'a gain medium toone or more optical elements to at least partially isolate a pump source from the unabsorbed portion of the first component beam and the unabsorbed portion of the second component beam.2. The optical pump of claim 1 , wherein the first polarization is substantially orthogonal to the second polarization.3. The optical pump of claim 1 , wherein the one or more optical elements include a beam dump to absorb the unabsorbed portion of the first component beam and the unabsorbed portion of the second component beam.4. The optical pump of claim 1 , wherein the gain medium ...

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Номер записи: 78
10-06-2021 дата публикации

Optically pumped tunable VCSEL employing geometric isolation

Номер: US20210175683A1
Автор: Atia Walid A., Johnson Bartley C., Kuznetsov Mark E., Mallon Edward J., Whitney Peter S.
Принадлежит:

An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping. 1. An optically pumped tunable vertical cavity surface emitting laser (VCSEL) swept source module , comprising:a tunable VCSEL;a lens for collimating a VCSEL beam emitted by the VCSEL; anda pump for producing pump light to pump the VCSEL, wherein the pump is geometrically isolated from the VCSEL by coupling the pump light from the pump at an angle with respect to the VCSEL through the lens.2. The module of claim 1 , wherein the angle is less than 88 degrees.3. The module of claim 1 , wherein the angle is less than 80 degrees.4. The module of claim 1 , wherein the angle is greater than 75 degrees.5. The module of claim 1 , wherein the pump is a VBG or FBG stabilized laser claim 1 , a discrete mode laser claim 1 , a DFB laser claim 1 , FP laser and/or DBR laser.6. The module of claim 1 , further comprising a dichroic filter.7. The module of claim 1 , wherein the dichroic filter transmits light from the pump and reflects the VCSEL beam from the VCSEL.8. The module of claim 1 , further comprising an SOA for amplifying the VCSEL beam.9. The module of claim 1 , further comprising a beam block for ...

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Номер записи: 79
02-06-2016 дата публикации

OPTICALLY PUMPABLE WAVEGUIDE AMPLIFIER WITH AMPLIFIER HAVING TAPERED INPUT AND OUTPUT

Номер: US20160156147A1
Автор: RAINO GABRIELE, Soganci Ibrahim Murat
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

Optically pumpable waveguide amplifier with amplifier having tapered input and output. The present invention provides for a optically pumpable waveguide amplification device that includes: a cladding material; a passive optical waveguide embedded in the cladding material that has no optical amplification functionality; and an active optical waveguide having an input portion, a middle portion and an output portion, including: a gain material with a higher refractive index than the passive optical waveguide, wherein the middle portion of the active optical waveguide is embedded in the cladding material, and faces the passive wave guide, such that a lower surface of the middle portion is an upper surface of the passive optical waveguide. There is also provided a device for optically pumpable waveguide amplification and a method for signal radiation amplification. 1. An optically pumpable waveguide amplifier device , comprising:a cladding material;a passive optical waveguide embedded in the cladding material that has no optical amplification functionality; andan active optical waveguide having a gain material with a higher refractive index than the passive optical waveguide, and which successively includes: an input portion, a middle portion, an output portion,wherein the middle portion successively include: a first taper portion, an amplifier portion, and a second taper portion; the middle portion embedded in the cladding material, and facing the passive waveguide, such that a lower surface of the middle portion is an upper surface of the passive optical waveguide; andeach of the taper portions widens towards the amplifier portion, parallel to the lower surface, such that a narrow end of each of the taper portions have a cross-sectional area that is smaller than a cross-sectional area of the passive optical waveguide at the same level of narrow end.2. The optical waveguide amplifier device of claim 1 , wherein a width of each of the taper portions decreases non- ...

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Номер записи: 80
07-05-2020 дата публикации

Bonded Tunable VCSEL with Bi-Directional Actuation

Номер: US20200144793A1
Автор: Getz James W., Whitney Peter S.
Принадлежит:

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device is used to displace the mirror to decrease a size of an optical cavity. 1. A tunable vertical cavity surface emitting laser (VCSEL) , comprising:a VCSEL, device including an active region for amplifying light; anda membrane device, bonded to the VCSEL device, having mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity; andwherein a proximal-side electrostatic cavity is defined between the VCSEL device and the membrane device for displacing the mirror to decrease a size of the optical cavity.2. The VCSEL as claimed in claim 1 , wherein the membrane device is metal bonded to the VCSEL.3. The VCSEL claim 1 , as claimed in claim 1 , wherein the proximal-side electrostatic cavity is defined between a membrane structure of the membrane device and a proximal-side electrostatic cavity electrode metal layer on the VCSEL claim 1 , device.4. The VCSEL as claimed in claim 3 , wherein a wire bond pad on the membrane device is electrically connected to the proximal-side electrostatic cavity electrode metal layer.5. The VCSEL as claimed in claim 1 , wherein the membrane structure is doped for increased conductivity.6. The VCSEL claim 1 , as claimed in claim 1 , wherein the VCSEL is protected against damage due to electrical overstress of the proximal-side electrostatic cavity by ensuring that the gap in the electrostatic cavity is prevented from going to 0 by use of an insulating stand-off.7. The VCSEL as claimed in claim 6 , wherein the insulating stand off is the reflective dielectric coating.8. The VCSEL as claimed in claim 1 , further comprising a distal-side electrostatic cavity driver ...

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Номер записи: 81
11-06-2015 дата публикации

SMALL PACKAGED TUNABLE LASER TRANSMITTER

Номер: US20150162990A1
Автор: Daiber Andrew John, Ding Frank Lei
Принадлежит: EMCORE CORPORATION

A tunable laser transmitter configured in a small package subassembly coupled to a printed circuit board. The tunable laser transmitter includes a housing with a volume formed by exterior walls. An electrical input interface is positioned at the first end of the housing. A first and a second optical output interface is positioned at the second end of the housing, the first output being configured to transmit a modulated optical beam, and the second output configured to transmit a cw beam to the local oscillator of an external receiver. 1. A small , packaged tunable optical transmitter comprising:a first housing;an electrical input interface positioned at the first end of a first housing, the electrical input interface configured to receive an information-containing electrical signal;an optical first output interface positioned at the second end of the first housing, the optical output interface configured to transmit a modulated optical communication beam;a tunable semiconductor laser disposed within a rectangular second housing having a volume of less than 0.6 cubic centimeters, the second housing being disposed in the interior space of the first housing, the second housing having six planar exterior walls including a bottom, a top, opposing first and second ends, and opposing sidewalls, the exterior walls forming a hermetically sealed interior space and operable to emit a laser beam having a selectable wavelength; anda semiconductor-based modulator positioned in the interior space of the first housing along an optical path of the laser beam, the semiconductor-based modulator configured to impart I and Q modulation respectively to the laser beam corresponding to the information-containing electrical signal received through the electrical input interface.2. The tunable optical transmitter of claim 1 , wherein the modulator includes first and second discrete semiconductor-based modulators positioned in the interior space of the first housing is configured to impart X ...

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Номер записи: 82
09-06-2016 дата публикации

OPTICAL SOURCE

Номер: US20160164255A1
Автор: Poustie Alistair James
Принадлежит:

An optical source is presented comprising a laser and an optical filter in optical communication with the laser. The laser comprises an optical gain section; and an optical phase control section. The filter is configured to receive light output from the laser and filter the said received light. The source is configured to input the filtered light back into the laser. 138-. (canceled)40. An optical source as claimed in claim 39 , wherein the laser comprises a laser cavity section disposed between a first optical reflector and a second optical reflector claim 39 , the laser cavity section comprising the optical gain section and optical phase control section.4140. An optical source as claimed in claim 39 , wherein:I) at least one of the first or second optical reflectors is a partial optical reflector; and,II) the optical filter is configured to receive laser light from one of the said at least one partial optical reflectors; and,III) the optical source is configured to input filtered light into one of the said at least one partial optical reflectors.42. An optical source as claimed in claim 39 , wherein the optical phase control section is controllable independently from the gain section.45. An optical source as claimed in claim 44 , wherein the third optical reflector is a partial reflector such that it is configured to transmit a portion of the light as an output of the laser source.46. An optical source as claimed in claim 39 , wherein the optical filter comprises a passband filter response.47. An optical source as claimed in claim 46 , wherein filter bandpass full width half maximum width is less than the longitudinal mode spacing of the laser.48. An optical source as claimed in claim 46 , wherein the optical filter comprises an optical thin film filter.49. An optical source as claimed in claim 48 , configured to change the central wavelength of the pass-band response of the optical filter by changing the angle of incidence that the output laser light subtends ...

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Номер записи: 83
08-06-2017 дата публикации

GRATING ELEMENT

Номер: US20170160450A1
Автор: ASAI Keiichiro, Kondo Jungo, TOMITA Toshihiro, YAMAGUCHI Shoichiro
Принадлежит: NGK Insulators, Ltd.

A grating device includes an optical material layer; a channel type optical waveguide region provided in the optical material layer; extension regions provided on the outsides of the channel type optical waveguide region, respectively; a Bragg grating provided in the channel type optical waveguide region; and periodic microstructures provided in the extension regions, respectively. The periodic microstructures are provided in 50 percent or larger of a total of areas of the extension regions. 1. A grating device comprising:an optical material layer;a channel type optical waveguide region provided in said optical material layer;extension regions provided on the outsides of said channel type optical waveguide region, respectively;a Bragg grating provided in said channel type optical waveguide region; andperiodic microstructures provided in said extension regions, respectively;wherein said periodic microstructures are provided in 50 percent or larger of a total of areas of said extension regions.2. The device of claim 1 , wherein each of said periodic microstructures comprises a Bragg grating claim 1 , pillars periodically arranged or holes periodically arranged.3. The device of claim 1 , wherein said Bragg grating and said periodic microstructures are formed by an imprinting method.4. The device of claim 1 , wherein said periodic microstructures contact said channel type optical waveguide region.5. The device of claim 1 , wherein said periodic microstructures are provided in a whole length of said channel type optical waveguide region.6. The device of claim 1 , wherein said Bragg grating and said periodic microstructures are provided on one main face of said optical material layer.7. The method of claim 1 , wherein said channel type optical waveguide region comprises a pair of ridge grooves and a ridge portion provided between said ridge grooves.8. The device of claim 1 , further comprising a clad layer contacting said optical material layer and a supporting body ...

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Номер записи: 84
08-06-2017 дата публикации

TUNABLE AMPLIFIED SPONTANEOUS EMISSION (ASE) LASER

Номер: US20170163011A1
Автор: CHAN Kin Long, Cheah Kok Wai, LEE Ka Suen, LI Gui Xin
Принадлежит:

This invention relates to a tunable amplified spontaneous emission (ASE) laser source comprising at least two laser sources excited by a single pump laser. More particularly, the present invention relates to a tunable amplified spontaneous emission (ASE) laser source comprising at least two laser sources excited by a single pump laser wherein said at least two laser sources each comprise an organic laser or a cascaded organic laser. The invention is used for providing a tunable amplified spontaneous emission (ASE) laser source comprising at least two laser sources excited by a single pump laser. 1. A tunable amplified spontaneous emission (ASE) laser source comprising at least two laser sources excited by a single laser pump wherein each of said at least two laser sources comprises an organic laser or a cascaded organic laser.2. The tunable ASE laser source according to wherein said organic laser or said cascaded organic laser is a thin film laser generating device.3. The tunable ASE laser source according to wherein said organic laser or said cascaded organic laser comprises at least blue and green emission organic semiconductors.4. The tunable ASE laser source according to wherein one of the at least two laser sources comprises a thin film laser generating device comprising Poly (9 claim 1 ,9-di-n-dodecylfluorenyl-2 claim 1 ,7-diyl) and the other of the at least two laser sources comprises a thin film laser generating device comprising Poly [(9 claim 1 ,9-di-n-octylfluorenyl-2 claim 1 ,7-diyl)-alt-(benzo[2 claim 1 ,1 claim 1 ,3]thiadiazol-4 claim 1 ,8-diyl)].5. The tunable ASE laser source according to wherein the single laser pump comprises a third harmonic laser from Nd:YAG.6. The tunable ASE laser source according to wherein the single laser pump comprises a pulsed UV emission laser.7. The tunable ASE laser source according to wherein one of the at least two laser sources comprises a thin film laser generating device of lasing organic material comprising Poly ( ...

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Номер записи: 85
14-05-2020 дата публикации

Continuous-wave pumped polymer laser and preparation method thereof

Номер: US20200153200A1
Автор: Chinhua Wang, Xiaohui Li, Yuyan WENG, Zhijun Hu
Принадлежит: SUZHOU UNIVERSITY

The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

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Номер записи: 86
04-09-2014 дата публикации

MODE-LOCKED OPTICALLY PUMPED SEMICONDUCTOR LASER

Номер: US20140247842A1
Автор: CAPRARA Andrea, Govorkov Sergei, MacGillivray Ian
Принадлежит: Coherent, Inc.

A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency less than 150 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences. 1. Laser apparatus , comprising:a laser-resonator having a resonator length;at least one surface-emitting multilayer semiconductor gain-structure located in the laser-resonator, the at least one and any other gain-structures including a plurality of active-layers spaced apart by spacer-layers and having an excited-state lifetime characteristic of material of the active-layers;a light source for optically pumping the gain-structure, thereby causing radiation having a fundamental wavelength characteristic of the active layers of the gain-structure to circulate in the laser-resonator;mode-locking means located in the laser-resonator for causing the circulating radiation to circulate as sequence of mode-locked pulses; andone or more mirrors arranged for causing the circulating radiation to make at least four gain-structure incidences during each round trip thereof in the laser-resonator, with a predetermined time between gain-structure incidences less than twice excited-state lifetime of the gain-structure and wherein the length of the resonator is selected to produce a pulse repetition frequency of less than 150 megahertz.2. The apparatus of claim 1 , wherein the resonator length is selected such that the pulse repetition frequency is between about 50 megahertz and 150 megahertz.3. The apparatus of claim 1 , wherein the pulses have a duration of about 200 femtoseconds or less.4. The ...

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Номер записи: 87
04-09-2014 дата публикации

COMPOSITE SEMICONDUCTOR LIGHT SOURCE PUMPED BY A SPONTANEOUS LIGHT EMITTER

Номер: US20140247853A1
Автор: DEPPE DENNIS G.
Принадлежит: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

A composite light source includes a substrate having a top surface, and a first vertical light source formed in the substrate. The first light source includes least a lower mirror, a first active region above the lower mirror, wherein the first active region has a thickness sufficient when electrically pumped to emit predominantly a spontaneous vertical emission from the first active region towards the top surface having an angular range of at least (≧) 30°. A second light source is formed in the substrate above the first active region including a second active region. The spontaneous vertical emission is at a first wavelength λthat optically drives said second active region to provide an emission at a second wavelength λ, wherein λ>λ. 1. A composite light source , comprising:a substrate having a top surface; at least a lower mirror;', 'a first active region above said lower mirror, said first active region having a thickness sufficient when electrically pumped to emit predominantly a spontaneous vertical emission from said first active region towards said top surface having an angular range of at least (≧) 30°;', 'a second light source including formed in said substrate above said first active region including a second active region,', {'sub': 1', '2', '2', '1, 'wherein said spontaneous vertical emission is at a first wavelength λthat optically drives said second active region to provide an emission at a second wavelength λ, wherein λ>λ.'}], 'a first vertical light source formed in said substrate, including2. The composite light source of claim 1 , further comprising an upper mirror in said substrate above said second light source so that said first vertical light source is within a vertical resonant cavity.3. The composite light source of claim 1 , wherein said first vertical light source is a light emitting diode (LED).4. The composite light source of claim 2 , wherein:said vertical resonant cavity includes an inner mode confinement region and an outer current ...

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Номер записи: 88
24-06-2021 дата публикации

Surface-emitting laser

Номер: US20210194205A1
Автор: Fumio Koyama, Masanori NAKAHAMA, Xiaodong Gu
Принадлежит: Tokyo Institute of Technology NUC

A surface-emitting laser includes an output unit. The output unit has an oblong-shaped VCSEL (vertical-cavity surface-emitting laser) structure. The output unit operates in an oscillation state in which a current that is larger than the oscillation threshold value is injected. The output unit receives a coherent seed light via a coupling surface at one end of the VCSEL structure in the longitudinal direction thereof. The seed light thus received propagates as a slow light through the VCSEL structure in the longitudinal direction thereof while being reflected multiple times in the vertical direction within the VCSEL structure. An output light is extracted from the upper surface of the VCSEL structure.

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Номер записи: 89
24-06-2021 дата публикации

OPTICAL AMPLIFYING APPARATUS AND METHOD OF AMPLIFYING OPTICAL SIGNAL

Номер: US20210194218A1
Автор: LE TAILLANDIER DE GABORY Emmanuel, MATSUMOTO Keiichi, Nakamura Shigeru, YANAGIMACHI Shigeyuki
Принадлежит: NEC Corporation

It is necessary to reduce the power consumption of a plurality of optical amplifiers when there is a difference in the required pumping power between the plurality of optical amplifiers; therefore, an optical amplifying apparatus according to an exemplary aspect of the invention includes a plurality of optical amplifying means for amplifying a plurality of optical signals, each of the plurality of optical amplifying means including a gain medium; a plurality of laser light generating means for generating a plurality of laser beams; at least one optical coupling means for coupling the plurality of laser beams variably in accordance with a coupling factor and outputting a plurality of excitation light beams, each of the plurality of excitation light beams exciting the gain medium; and controlling means for controlling the coupling factor and an output power of each of the plurality of laser light generating means. 1. An optical amplifying apparatus , comprising:a plurality of optical amplifiers configured to amplify a plurality of optical signals, each of the plurality of optical amplifiers including a gain medium;a plurality of laser light sources configured to generate a plurality of laser beams;at least one optical coupling device configured to couple the plurality of laser beams variably in accordance with a coupling factor and output a plurality of excitation light beams, each of the plurality of excitation light beams exciting the gain medium; anda controller configured to control the coupling factor and an output power of each of the plurality of laser light sources.2. The optical amplifying apparatus according to claim 1 ,wherein the at least one optical coupling device includes a plurality of optical coupling devices, andthe controller controls the coupling factor of each of the plurality of optical coupling devices.3. The optical amplifying apparatus according to claim 1 ,wherein the gain medium is a core included in a multicore fiber, andeach of the ...

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Номер записи: 90
16-06-2016 дата публикации

Optically-Induced Charge Separation and Induced Magnetism in Dielectrics for Optical Energy Conversion and Intense Magnetic Field Generation

Номер: US20160172822A1
Автор: Fisher William M., Rand Stephen C.
Принадлежит:

Schemes are described to produce quasi-static charge separation, Terahertz radiation, and programmable magnetic field generation using linearly-polarized light in unbiased, transparent insulators. The methods exploit a recently-observed magneto-electric optical nonlinearity that produces intense magnetization in undoped, homogeneous dielectrics. Analysis reveals that strong magnetic effects can be induced at modest optical intensities even with incoherent light. Consequently, efficient solar power conversion is feasible without the semiconductor processing or electron-hole pair generation that is required in conventional photovoltaic cells. Additionally, conditions and techniques are described to generate intense THz radiation in unbiased substrates and large magnetic fields orientated transverse to the direction of propagation of light, without the need for any external permanent magnetic or electromagnetic apparatus. 17.-. (canceled)8. An AC current or voltage source comprising:a non-conducting substrate; anda light source collector positioned to receive light from a non-coherent light source and to pump a light output into the substrate, the light output having an intensity level approaching or above a threshold for inducing a maximum magnetic response in the substrate to produce charge separation across the substrate.9. The AC current or voltage source of claim 8 , wherein the pump light source is stochastic.10. The AC current or voltage source of claim 8 , wherein the pump light source is sunlight.11. The AC current or voltage source of claim 8 , wherein the substrate is formed of CCl4 and the threshold intensity claim 8 , I claim 8 , for inducing the maximum magnetic response is I>108 W/cm2.12. An opto-electrical converter comprising:a non-conducting transparent substrate having electrodes across at least a portion thereof; anda light source coupled to pump a light beam into the substrate, the beam having an energy level above a threshold for inducing maximum ...

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Номер записи: 91
29-09-2022 дата публикации

Tunable VCSEL polarization control with intracavity subwavelength grating

Номер: US20220311213A1
Автор: Johnson Bartley C.
Принадлежит:

A very strong selection mechanism is provided in a tunable vertical cavity surface emitting laser (VCSEL) by manipulating the laser threshold to be different for TE and TM polarization by a employing a subwavelength grating in the laser cavity. The laser selects the polarization with the lowest threshold. The grating does not diffract and does not add loss to the cavity. It works by creating a large birefringence layer between the semiconductor and air sub-cavities of the full VCSEL. Multilayer stack calculations show that this results in a lower threshold for the TM polarization over the TE. This subwavelength grating layer, in one embodiment, replaces the AR coating on the semiconductor surface. 1. A tunable vertical surface emitting laser , comprising:a deflectable membrane device carrying a mirror and a half VCSEL defining an optical cavity of the laser; anda subwavelength grating in the optical cavity.2. The laser of claim 1 , wherein the subwavelength grating is located on the half VCSEL.3. The laser of claim 1 , wherein the subwavelength grating formed on a top high index layer of the half VCSEL.4. The laser of claim 1 , wherein the half VCSEL includes a distributed Bragg reflector.5. The laser of claim 1 , wherein the grating has a 50% duty cycle.6. The laser of claim 1 , wherein the grating is alternating material and air.7. The laser of claim 1 , wherein the grating is alternating InGaP and air.8. The laser of claim 1 , wherein the grating replaces an antireflective coating on the half VCSEL.9. A method for fabricating a tunable vertical surface emitting laser claim 1 , comprising:forming a deflectable membrane device and a half VCSEL device defining an optical cavity of the laser; andforming a subwavelength grating into the half VCSEL device.10. The method of claim 9 , wherein the subwavelength grating is etched into the half VCSEL device.11. The method of claim 9 , wherein the subwavelength grating is etched into on a top high index layer of the half ...

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Номер записи: 92
29-09-2022 дата публикации

LASER EMITTER INCLUDING NANOWIRES

Номер: US20220311216A1
Автор: Gardner Geoffrey Charles, GRONIN Sergei V., Kallaher Raymond Leonard
Принадлежит: Microsoft Technology Licensing, LLC

A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction. 1. A laser emitter comprising:a substrate;a dielectric mask layer located proximate to and above the substrate in a thickness dimension, the dielectric mask layer having three or more trenches formed therein, wherein the three or more trenches have a plurality of different respective widths of varying sizes in a width dimension that is orthogonal to the thickness dimension; a first semiconductor layer located above the substrate in the thickness dimension,', 'a quantum well layer located proximate to and above the first semiconductor layer in the thickness dimension, and', 'a second semiconductor layer located proximate to and above the quantum well layer in the thickness dimension,, 'three or more nanowires, including a respective nanowire of the three or more nanowires located at least partially within each trench of the three or more trenches, each nanowire of the three or more nanowires includingwherein respective thicknesses of the quantum well layers of the three or more nanowires vary according to a linear or non-linear function,wherein the respective thicknesses of the quantum well layers of the three or more nanowires in the thickness dimension define a ...

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Номер записи: 93
21-06-2018 дата публикации

ELECTRICALLY PUMPED PHOTONIC CRYSTAL NANOLASER

Номер: US20180175585A1
Автор: CROSNIER Guillaume, Monnier Paul, Raineri Fabrice, Raj Rama
Принадлежит:

A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers () forming an assembly of quantum wells are placed between a lower layer () of a first conductivity type and an upper layer () of a second conductivity type. Holes () are drilled right through the thickness of the rib, wherein the lower layer includes first extensions () that extend laterally on either side of the rib, and that are coated with first metallizations () that are located a distance away from the rib. The stack includes second extensions () that extend longitudinally beyond said rib, and that are coated with second metallizations (). 18-. (canceled)9. A nanolaser with semiconductors , comprising:a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib;wherein said lower layer comprises first extensions which extend laterally on either side of the rib and which are coated with first metallizations that are spaced apart from the central layers of the rib; andwherein said upper layer comprises second extensions which extend longitudinally beyond either end of said rib and which are coated with second metallizations.10. The nanolaser of claim 9 , wherein the first extensions of the lower layer have a thickness which is less than a thickness of a remainder of the lower layer in said rib.11. The nanolaser of claim 9 , wherein a distance that said first metallizations are spaced apart from the central layers of the rib is in the order of a wavelength divided by a refraction index of a material covering the first metallizations.12. The nanolaser of claim 9 , wherein the stack of layers of said rib successively comprises:the lower layer of a P-type doped III-V semiconductor;the central layers formed by a stack of layers of III-V ...

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Номер записи: 94
08-07-2021 дата публикации

GENERATION OF HIGH-POWER SPATIALLY-RESTRUCTURABLE SPECTRALLY-TUNABLE BEAMS IN A MULTI-ARM-CAVITY VECSEL-BASED LASER SYSTEM

Номер: US20210210928A1
Автор: Fallahi Mahmoud, Hessenius Chris, Wright Ewan
Принадлежит:

A collinear T-cavity VECSEL system generating intracavity Hermite-Gaussian modes at multiple wavelengths, configured to vary each of these wavelengths individually and independently. A mode converter element and/or an astigmatic mode converter is/are aligned intracavity to reversibly convert the Gaussian modes to HG modes to Laguerre-Gaussian modes, the latter forming the system output having any of the wavelengths provided by the spectrum resulting from nonlinear frequency-mixing intracavity (including generation of UV, visible, mid-IR light). The laser system delivers Watt-level output power in tunable high-order transverse mode distribution. 1. A laser source comprising:a laser cavity network including first and second spatially-distinct cavity arms and a collinear portion, wherein the first and second spatially-distinct cavity arms share the collinear portion, a corresponding gain medium that includes one of (i) a VECSEL-based laser gain medium, (ii) a solid-state gain medium, and (iii) a fiber amplifier, and that is configured to provide amplification of light at a corresponding wavelength;', 'and', 'at least one of a first transverse light mode converter optical system, disposed across an axis of the at least one of the first and second cavity arms to either refract or reflect light incident thereon, and a second transverse light mode converter optical system disposed across said axis between the corresponding gain medium and a terminus of the collinear portion;, 'at least one of the first and second cavity arms containing'}wherein said laser source is configured to maintain intracavity generation of light at the corresponding wavelength such that a first transverse light mode distribution is formed between the second transverse light mode converter and the collinear portion and a second transverse light mode distribution is formed in a remaining portion of the laser cavity network, andwherein the first transverse light mode distribution and the second ...

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Номер записи: 95
13-06-2019 дата публикации

SEMICONDUCTOR LASER

Номер: US20190181612A1
Автор: Baehr-Jones Thomas Wetteland, Fathololoumi Saeed, Hochberg Michael J., Yang Shuyu, Zhang Yi
Принадлежит: Elenion Technologies, LLC

A hybrid single or multi-wavelength laser using an optical gain element, such as a semiconductor optical amplifier (SOA), for example a QD RSOA, and a semiconductor, e.g. silicon, photonics chip is demonstrated. A plurality, e.g. four, lasing modes at a predetermined, e.g. 2 nm, spacing and less than 3 dB power non-uniformity may be observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems. 120-. (canceled)21. A semiconductor laser , comprising:an optical port configured to provide an optical output beam comprising one or more selected optical wavelengths; a first reflector at a first end of the optical cavity, said first reflector comprising a first reflectivity; and', 'a second reflector at a second end of the optical cavity, the second reflector comprising a second reflectivity;, 'an optical cavity, in optical communication with the optical port, comprisingan optical gain medium in the optical cavity for amplifying light at the one or more selected wavelengths;a filter element in the optical cavity between the optical gain medium and the optical port configured to pass light of the one or more selected optical wavelengths therethrough to and from the optical gain medium and deflect wavelengths not of interest away from said optical gain medium and the optical port to suppress stimulated emission of those wavelengths; anda phase tuner capable of adjusting and controlling operating conditions of the laser.22. The laser according to claim 21 , wherein the phase tuner is capable of tuning the laser cavity to at least partially compensate for changing conditions.23. The laser according to claim 21 , wherein the phase tuner is capable of tuning the laser cavity to at least partially compensate for ...

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Номер записи: 96
13-06-2019 дата публикации

VERTICAL CAVITY SURFACE EMITTING LASER AND METHOD FOR MANUFACTURING SAME

Номер: US20190181615A1
Автор: Choi Won Jin
Принадлежит: RAYIR, CO.

An embodiment discloses a vertical cavity surface emitting laser and a method for manufacturing the same, the vertical cavity surface emitting laser comprising: a substrate; a lower reflective layer disposed on the substrate; an active layer disposed on the lower reflective layer; an oxide layer disposed on the active layer and comprising a first hole disposed at the center thereof; a capping layer disposed on the oxide layer; and an upper reflective layer disposed on the capping layer and the first hole. 1. A vertical cavity surface emitting laser comprising:a substrate;a lower reflective layer disposed on the substrate;an active layer disposed on the lower reflective layer;an oxide layer disposed on the active layer and including a first hole formed at the center thereof;a capping layer disposed on the oxide layer; andan upper reflective layer disposed on the capping layer and the first hole.2. The vertical cavity surface emitting laser of claim 1 , wherein the upper reflective layer includes a stepped portion disposed on the first hole.3. The vertical cavity surface emitting laser of claim 1 , wherein an aluminum composition of the capping layer is smaller than an aluminum composition of the oxide layer.4. The vertical cavity surface emitting laser of claim 1 , wherein the upper reflective layer includes a plurality of first upper reflective layers and a plurality of second upper reflective layers claim 1 ,wherein the plurality of first upper reflective layers and the plurality of second upper reflective layers are alternately disposed, andthe first upper reflective layer has a refractive index higher than that of the second upper reflective layer.5. The vertical cavity surface emitting laser of claim 2 , wherein a width of the stepped portion of the upper reflective layer decreases as a distance from the active layer increases.6. The vertical cavity surface emitting laser of claim 5 , wherein the upper reflective layer includes a first groove formed in an ...

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Номер записи: 97
29-06-2017 дата публикации

IMPROVED PASSIVELY MODE-LOCKING SEMICONDUCTOR DISK LASER (SDL)

Номер: US20170187162A1
Автор: HAMILTON Craig James, MALCOLM Graeme Peter Alexander
Принадлежит:

A passively mode-locking laser and corresponding method is described. The laser comprises a resonator () terminated by first () and second () mirrors and folded by a third () and fourth () mirror. The third mirror comprises a reflector () surmounted by a multilayer semiconductor gain medium () including at least one quantum well layer while the second mirror () comprises an intensity saturable mirror. The resonator is configured to provide a cross sectional area of an intra cavity resonating field on the intensity saturable mirror that is greater than or equal to a cross sectional area of the intra cavity resonating field on the multilayer semiconductor gain medium. This arrangement provides a passively mode-locking laser that exhibits increased stability when compared to those systems known in the art. 1) A passively mode-locking laser comprising:a resonator terminated by first and second mirrors and folded by third and fourth mirrors, the third mirror comprising a reflector surmounted by a multilayer semiconductor gain medium including at least one quantum well layer and the second mirror comprising an intensity saturable mirror,wherein the resonator is configured to provides a cross sectional area of an intra cavity resonating field on the intensity saturable mirror that is greater than or equal to a cross sectional area of the intra cavity resonating field on the multilayer semiconductor gain medium.2) A passively mode-locking laser as claimed in wherein the fourth mirror has a concave radius of curvature.3) A passively mode-locking laser as claimed in wherein the resonator is additionally folded by a fifth mirror claim 1 , the fifth mirror being located between the first and third mirrors.4) A passively mode-locking laser as claimed in wherein the fifth mirror has a concave radius of curvature.5) A passively mode-locking laser as claimed in wherein the first mirror comprises an output coupler.6) A passively mode-locking laser as claimed in wherein the output ...

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Номер записи: 98
29-06-2017 дата публикации

OPTICALLY PUMPABLE WAVEGUIDE AMPLIFIER WITH AMPLIFIER HAVING TAPERED INPUT AND OUTPUT

Номер: US20170187166A1
Автор: RAINO GABRIELE, Soganci Ibrahim Murat
Принадлежит:

Optically pumpable waveguide amplifier with amplifier having tapered input and output. The present invention provides for a optically pumpable waveguide amplification device that includes: a cladding material; a passive optical waveguide embedded in the cladding material that has no optical amplification functionality; and an active optical waveguide having an input portion, a middle portion and an output portion, including: a gain material with a higher refractive index than the passive optical waveguide, wherein the middle portion of the active optical waveguide is embedded in the cladding material, and faces the passive wave guide, such that a lower surface of the middle portion is an upper surface of the passive optical waveguide. There is also provided a device for optically pumpable waveguide amplification and a method for signal radiation amplification. 2. The optical waveguide amplifier device of claim 1 , wherein a width of each of the taper portions decreases non-linearly from the amplifier portion claim 1 , parallel to the lower surface.3. The optical waveguide amplifier device of claim 2 , wherein each of the taper portions decomposes into at least two sub-portions claim 2 , including at least one slowly-varying sub-portion and at least one fast-varying sub-portion.4. The optical waveguide amplifier device of claim 1 , wherein the distance between the lower surface and the upper surface is between 0.0 and 5.0 μm.5. The optical waveguide amplifier device of claim 1 , wherein the passive optical waveguide is a rib waveguide claim 1 , comprising: a slab and a strip claim 1 , the strip being superimposed directly onto the slab claim 1 , and wherein the upper surface of the passive optical waveguide is an upper surface of the slab claim 1 , opposite to the strip with respect to the slab.6. The optical waveguide amplifier device of claim 1 , wherein a length of the taper portions is between 50 μm and 10 mm.7. The optical waveguide amplifier device of claim 1 , ...

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Номер записи: 99
13-07-2017 дата публикации

ROOM-TEMPERATURE EXCITON-POLARITON SUPERFLUID QUANTUM INTERFERENCE DEVICE AND QUATRON-POLARITON SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE

Номер: US20170199036A1
Автор: III Frederick Ira, MOXLEY
Принадлежит:

The present disclosure relates to Superfluid QUantum Interference Devices (SQUIDs) that measure phase differences existing in quasi-particles or matter-wave systems, and the related techniques for their use at room-temperatures. These Bose-Einstein Condensation interferometry techniques include quantum scale metrology devices such as quasi-particle based linear accelerometers, gyroscopes, and Inertial Measurement Units that incorporate such interferometers. In the presence of additive white Gaussian noise, estimates are made for the Bias Instability, Angle Random Walk, and Velocity Random Walk of the device for purposes of quantum inertial sensing. Moreover, this disclosure relates to SQUIDs based on charged quasi-particles that can, in turn, be used to construct quantum computing elements such as quantum transistors, and quasi-particle circuits at room-temperatures. These quasi-particle circuits can be used to build analogs of electronic circuit elements, and offer an alternative to traditional electronics. Using a quasi-particle circuit, hysteresis can be achieved and controlled to build these new devices. 1. A system for producing superposition states in quasi-particle Bose-Einstein condensates comprising:a pumped microcavity quantum well device operable to generate, when pumped, a quasi-particle Bose-Einstein condensate; and,a source of power for pumping the microcavity quantum well device wherein a pumping profile generates hot quasi-particles, wherein the microcavity quantum well device is operable to lase coherent superposition states of light.2. The system of wherein the source of power for pumping the microcavity quantum well device comprises a light source configured to produce a coherent beam profile.3. The system of wherein the source of power for pumping the microcavity quantum well device comprises a source of electricity.4. The system of wherein the pumped microcavity quantum well device is operable to receive the optical output of an interferometer ...

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Номер записи: 100