ПОЛУПРОВОДНИКОВОЕ ЛАЗЕРНОЕ УСТРОЙСТВО И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение предлагает лазерное устройство, способное выполнять колебания в устойчивой поперечной моде и выдавать лазерный луч с превосходной диаграммой направленности в дальней зоне. Первое полупроводниковое лазерное устройство содержит многослойную структуру, в которой полупроводниковый слой проводимости первого типа, активный слой и полупроводниковый слой проводимости второго типа, которая отличается от проводимости первого типа, расположены последовательно, и волноводную зону для направления луча света в направлении, перпендикулярном направлению ширины, посредством ограничения расхождения луча в направлении ширины. Волноводная зона включает зону первого волновода и зону второго волновода. В зоне первого волновода луч локализован внутри активного слоя вследствие разницы в показателе преломления между активным слоем и зонами на обеих сторонах посредством ограничения ширины активного слоя, и в зоне второго волновода луч локализован посредством обеспечения эффективной разницы в показателе ...

СПОСОБ РЕГУЛИРОВАНИЯ ДИАПАЗОНА РАБОЧИХ ЧАСТОТ ЛАЗЕРНОЙ МОДУЛЯЦИИ

Изобретение относится к способам, обеспечивающим регулирование полосы лазерной модуляции эффективных высокомощных полупроводниковых инжекционных лазеров, в том числе с одномодовым, одночастотным излучением. Способ включает создание гетероструктуры с активным слоем и прилегающими к нему с двух сторон ограничительными слоями, включающими с каждой стороны по крайней мере по одному ограничительному подслою наибольшего оптического ограничения, имеющих противоположные типы электропроводности. При этом между ограничительными легированными подслоями наибольшего оптического ограничения, ближайшими к активному слою, в том числе в активном слое, обеспечивают уровень фоновой примеси, ограничительные легированные подслои наибольшего оптического ограничения, ближайшие к активному слою, легируют так, чтобы регулируемое отношение концентрации дырок Р в подслое наибольшего оптического ограничения р-типа электропроводности со стороны р-типа к концентрации электронов N в подслое наибольшего оптического ограничения ...

SURFACE-EMITTING DIODE LASER WITH STRUCTURED TRANSVERSE ELECTROMAGNETIC WAVE

SOLID PICTURE RECORDING DEVICE, HEADING FOR PROCEDURE FOR IT AND VIDEO CAMERA SYSTEM

DIODE LASER AND MANUFACTURING PROCESS

NITRIDE DIODE LASER AND ITS MANUFACTURING METHOD

PROCEDURE FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES WITH MESASTRUKTUR AND SEVERAL PASSIVATION LAYERS

HIGH PERFORMANCE VERTICALLY EMITTING LASERS

ALGAAS NATIVE OXIDE

VCSEL WITH ANTIGUIDE CURRENT CONFINEMENT LAYER

SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD

A current blocking structure to improve semiconductor laser performance

Transmitter photonic integrated circuit

Quantum well intermixing

INJECTION LASER MANUFACTURE

Extended wavelength strained layer lasers

A laser diode

DIGITAL OPTICAL NETWORK ARCHITECTURE

A digital optical network (DON) is a new approach to low-cost, more compact optical transmitter modules and optical receiver modules for deployment in optical transport networks (OTNs). One important aspect of a digital optical network is the incorporation in these modules of transmitter photonic integrated circuit (TxPIC) chips and receiver photonic integrated circuit (TxPIC) chips in lieu of discrete modulated sources and detector sources with discrete multiplexers or demultiplexers.

OPTICAL SIGNAL PROCESSING DEVICE

... - OPTICAL SIGNAL PROCESSING DEVICE By using a DFB semiconductor laser amplifier 1 in reflection, it is possible to obtain a device with an optical limiting characteristic. The output signal intensity of such an amplifier 1 is substantially independent of the input signal intensity where the input signal is detuned from an output peak on the short wavelength side of a stop band of the amplifier 1, and has an intensity above a threshold value. The amplifier 1 finds particular application for instance as anoptical limiter or noise filter , in optical logic and communications systems; ...

SEMICONDUCTOR LASER

SEMICONDUCTOR LASER The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting ...

ELECTRONIC DEVICES INCLUDING SEMICONDUCTOR MESA STRUCTURES AND CONDUCTIVITY JUNCTIONS AND METHODS OF FORMING SAID DEVICES

An electronic device including a substrate and a semiconductor mesa on the substrate. Said device mesa having a mesa base adjacent to the substrate, a mesa surface opposite the substrate, and mesa sidewalls between the mesa surface and the mesa base. In addition, the semiconductor mesa has a first conductivity type between the mesa base and a junction, the junction being between the mesa base and the mesa surface, and the semiconductor mesa having a second conductivity type between the junction and the mesa surface. Related manufacturing methods are also defined.

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor laser (200) comprises a semiconductor substrate (100), a pair of cladding layers (110, 150) formed on the substrate, a pair of undoped SCH layers (120, 140) disposed between the cladding layers (110, 150), and an active quantum well layer (130) disposed between the undoped SCH layers (120, 140). The waveguide loss of light output in leaky mode is smaller than the mode gain of the semiconductor laser because the existence of the SCH layers (120, 140) and the adequate film thickness of the cladding layers (110, 150). The laser provides low threshold current and high emission efficiency.

A LASER DIODE ARRAY WITH AN IN-PHASE OUTPUT

A laser diode array (10) that includes a plurality of laser stripes each separated by an unpumped region. The array (10) includes at least one first laser stripe (12) and at least one second laser stripe (14). The first laser stripe (12) emits a first laser beam. The second laser stripe (14) emits a second laser beam. A phase shifter is connected to the stripes so that the phase of the second laser beam is shifted to be in phase with first laser beam. The resultant output beam of the array (10) is a high power, high quality, diffraction limited beam.

A METHOD TO GAAS BASED LASERS AND A GAAS BASED LASER

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

SINGLE TRANSVERSE MODE OPERATION IN DOUBLE HETEROSTRUCTURE JUNCTION LASER

QUANTUM WELL INTERMIXING

The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple- wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

HYBRID SEMICONDUCTOR LASER COMPONENT AND METHOD FOR MANUFACTURING SUCH A COMPONENT

L'invention concerne un composant laser semiconducteur hybride (1) comportant au moins un premier module d'émission (110, 120) comprenant une zone active conformée pour émettre un rayonnement électromagnétique à une longueur d'onde donnée; et une couche optique (200) comprenant au moins un premier guide d'onde (210, 220) couplé optiquement à la zone active (110, 120),le guide d'onde (210, 220) formant avec la zone active (110, 120) une cavité optique résonnante à la longueur d'onde donnée. Le composant laser semiconducteur hybride (1) comporte en outre une couche semiconductrice (310) dite de dissipation thermique, ladite couche semiconductrice de dissipation thermique (310) étant en contact thermique avec le premier module d'émission (110, 120) sur une surface du premier module d'émission (110, 120) qui est opposée à la couche optique (200). L'invention concerne en outre un procédé de fabrication d'un tel composant laser semiconducteur hybride (1) ...

TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TXPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TXPICS

... ²²²A photonic integrated circuit (PIC) chip comprising an array of modulated ²sources, each providing a modulated signal output at a channel wavelength ²different from the channel wavelength of other modulated sources and a ²wavelength selective combiner having an input optically coupled to received ²all the signal outputs from the modulated sources and provide a combined ²output signal on an output waveguide from the chip. The modulated sources, ²combiner and output waveguide are all integrated on the same chip.² ...

SEMICONDUCTOR LASER LIGHT SOURCE

In conventional semiconductor laser light sources, since intervals of light emitter waveguides are changed or stresses which are applied on chips of a laser array are controlled in the production process, there exists a problem that the productivity is lowered. A structure of a heat sink 3a, on which a semiconductor laser array 2 is mounted in which a plurality of semiconductor lasers are arrayed at equal intervals in a stripe width direction, is configured so that the heat radiation efficiencies of the plurality of semiconductor lasers are not constant between the central region and other regions in the stripe width direction. Concretely, the heat sink is configured in such a way that an area of a second region in a second surface of the heat sink is smaller than an area of a fourth region in the second surface with which the semiconductor laser radiation portion except for the central side of the plurality of semiconductor lasers in the stripe width direction are in contact, when each ...

BLUE-GREEN LASER DIODE

A II-VI compound semiconductor laser diode (IO) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding la- sers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least I x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

METHOD OF PROCESSING AN EPITAXIAL WAFER OF INP

A method is provided herein for the fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light-emitting diodes or photodiodes. The InP epitaxial wafer is selectively covered with striped protection mask films. The parts of the wafer which are uncovered by the protection mask films are first etched by an etchant which forms normal-mesas or mountain-shaped stripes under the masks, to provide a first-etched wafer. Then, the first-etched wafer is again etched by a gas of thermally-dissolved AsCl3 until the stripes have rectangle sections with erect surfaces. Buried layers of InP then are grown on the eliminated parts of the wafer.

VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTRA-CAVITY STRUCTURES

... 2135182 9322813 PCTABS00028 Vertical-cavity surface-emitting lasers (VCSELs) are disclosed having various intra-cavity structures to achieve low series resistance, high power efficiencies, and TEM mode radiation. In one embodiment of the invention, a VCSEL comprises a laser cavity disposed between an upper mirror (70) and a lower mirror (20). The laser cavity comprises upper spacer (50) and lower spacer (30) layers sandwiching an active region (40). A stratified electrode (60) for conducting electrical current to the active region (40) is disposed between the upper mirror (70) and the upper spacer (50). The stratified electrode (60) comprises a plurality of alternating high and low doped layers (62, 63, 64) for achieving low series resistance without increasing the optical absorption. The VCSEL further comprises a current aperture as a disk shaped region formed in the stratified electrode for suppressing higher mode radiation. The current aperture is formed by reducing or eliminating the ...

PROCESS FOR FORMING THE RIDGE STRUCTURE OF A SELF-ALIGNED SEMICONDUCTOR LASER

PROCESS FOR FORMING THE RIDGE STRUCTURE OF A SELF-ALIGNED SEMICONDUCTOR LASER

A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process stepthat is used to expose the contact layer to ohmic contact metallization deposition.

METHOD FOR IMPROVING THE FLATNESS OF ETCHED MIRROR FACETS

LOW GLOSS POLYCARBONATE/ABS BLENDS OBTAINED BY USING A HYDROXY FUNCTIONAL RIGID POLYMER

A thermoplastic blend composition is provided containing an aromatic polycarbonate, a graft copolymer and a hydroxy functional rigid polymer such as styrene-acrylonitrile-hydroxyalkyl methacrylate terpolymer. The compositions exhibit low gloss and are useful as molding resins.

CONDUCTIVE ELEMENT WITH LATERAL OXIDATION BARRIER

A conductive element with a lateral oxidation barrier is provided for t he control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.

Verfahren zur Herstellung von Halbleiter-Rekombinationslasern mit Pérot-Fabry-Grenzflächen hoher Güte

Process for correcting the emission spectrum of a light-emitting semiconductor diode having a waveguide comprises introducing local voids into the waveguide

Process for correcting the emission spectrum of a light-emitting semiconductor diode having a waveguide (7) comprises introducing local voids (12, 13, 14) into the waveguide. The number and size of the voids are selected so that the required spectral properties of the diode are produced without impairing the residual performance values. Preferred Features: The voids are introduced into the waveguides as hollow chambers in which semiconductor material has been removed.

Tunable laser silicon-based hybrid integrated and tunable laser and preparation method thereof

单片多波长激光器件及其制造该器件的方法

... 包括制成在单个砷化镓(GaAs)衬底上的一个第一波长的激光部分(102)和一个第二波长的激光部分(103)，其特征在于，第一波长的激光部分(102)具有一个真实引导结构，而第二波长的激光部分(103)具有一个损耗引导结构。在这类多波长的激光器件中，与常规的器件相比较，当第一波长是在大约780nm的波长段中和第二波长是在大约650nm的波长段中时，由于第一波长的激光部分具有一个真实引导结构，所以波导中的损耗可以减小，并且工作电流可以减小。 ...

Optical device having diffraction gratings coupling guided wave, and its manufacture method

Method for manufacturing laser device with both divergence angle and threshold current reduced

A method for manufacturing a laser device with both divergence angle and threshold current reduced comprises the steps of 1, manufacturing an n-type constraint layer, an n-shaped low-refractive-index insert layer, an n-shaped waveguide layer, a quantum well active area, a p-type waveguide layer, a p-type low-refractive-index insert layer, a p-type constraint layer and a p-type contact layer on a gallium arsenide substrate in sequence; 2, conducing wet corrosion or dry etching on the p-type contact layer and the p-type constraint layer so that the p-type contact layer and the p-type constraint layer can become ridged; 3, growing an oxidation film on the etched ridge, and manufacturing a p-type ohmic electrode on the upper surface of the p-type contact layer through photoetching; 4, thinning and cleaning the gallium arsenide substrate, and manufacturing an n-type ohmic electrode on the back side of the gallium arsenide substrate, so that the laser device is formed; 5, conducting cleavage, ...

Ridge waveguide electrode windowing method

Semiconductor laser device and producing method thereof

Optical semiconductor laser device and manufacture thereof

Semiconductor laser and preparation method thereof

Semiconductor laser with integrated slow optical waveguide on chip

Method for designing a semiconductor laser with intracavity reflecting features, semiconductor laser and method of fabrication thereof

Improvements in or relating to semiconductor lasers

OPTICAL COMPONENT SEMICONDUCTOR AND MANUFACTORING PROCESS Of a TELCOMPOSANT

OPTOELECTRONIC COMPONENT INCLUDING/UNDERSTANDING a CURVED GUIDE Of WAVE WITH DESFLANCS INCLINE RETURNING

Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer

Optical integrated circuit with waveguide - has mesa thin layer oscillator on waveguide coupled via direction coupler

Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer

LASER A SEMI-CONDUCTEUR A DOUBLE BANDE DE CONTACT

Laser à injection dans lequel le guidage latéral de l'énergie optique dans le plan de la couche active 12 est réalisé par concentration des porteurs à l'interface électrode 18-substrat 10 ou électrode 17-couche de contact 14. Selon l'invention, cette concentration est fournie par deux bandes de contact 16 parallèles, réalisées par exemple à travers un masque d'oxyde 15 entre une couche de métallisation 17 et une couche semi-conductrice 14. Cette dernière est, par exemple, en GaAS et recouvre une double hétérostructure constituée par les couches de GaA1As Il, 13 entourant la couche active de GaAs 13 sur un substrat de GaAs 10. Des bandes très étroites (2,5 mu m) et espacés de 5 mu m fournissent un guidage diélectrique du mode fondamental jusqu'aux fortes puissances et empêchent l'apparition du mode de premier harmonique responsable des non-linéarités et du bruit associé des lasers connus à bande unique. Application aux systèmes optiques de télécommunication et de télémesure.

PROCESS OF MODULATION DIRIGEE OF THE COMPOSITION OR THE DOPING OF SEMICONDUCTORS, IN PARTICULAR FOR THE REALIZATION OF MONOLITHIC ELECTRONICS COMPONENTS OF TYPE CORRESPONDING DOUBLE DIFFUSION, USE AND PRODUCTS

MANUFACTURING METHOD OF SEMICONDUCTOR LAZER DEVICE

APPARATUS AND METHOD FOR OPTIMIZING BEAM QUALITY WAVELENGTH CONTROLLED BEAM COMBINER

METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DEVICE

Laser diode having ridge portion

Semiconductor laser diode and method of manufacturing the same

SEMICONDUCTOR LIGHT MODULATING DEVICE

EDGE-EMITTING SEMICONDUCTOR LASER CHIP

High-Efficiency Oxidized VCSEL with high-doping area and Manufacturing Method Thereof

GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT WITH ACTIVE LAYER HAVING MULTIPLEX QUANTUM WELL STRUCTURE AND SEMICONDUCTOR LASER LIGHT SOURCE DEVICE

SEMICONDUCTOR LASER DIODE DEVICE AND MANUFACTURING METHOD

VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND SURFACE EMITTING SEMICONDUCTOR LASER ARRAY

PURPOSE: To provide a vertical cavity surface emitting semiconductor laser and a surface emitting semiconductor laser array capable of controlling the polarization direction of laser beams. CONSTITUTION: In the surface emission semiconductor laser 100 in which a resonator 120 is formed on a semiconductor substrate 101 in the vertical direction and laser beams are projected in the vertical direction to the semiconductor substrate 101 from the resonator 120, the laser 100 contains a columnar section 110 as a part of the resonator 120 and an insulating layer 112 formed while being brought into contact with the external surface of the columnar section 110, and the insulating layer 112 has anisotropic stress resulting fro the plane shape of the insulating layer and controls the polarization direction of laser beams by the anisotropic stress. © KIPO & JPO 2002 ...

SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING IMPROVED ELECTRICAL OPTICAL CHARACTERISTIC AND FABRICATING METHOD THEREOF

PURPOSE: A semiconductor light-emitting device having an improved electro-optical characteristic is provided to automatically perform an alignment between central axes of the window of an upper electrode and a current aperture, by previously forming the upper electrode and by forming the current aperture through an oxide process after a post is formed by performing an etch process while the upper electrode is used as a mask. CONSTITUTION: The post composed of a plurality of layers including at least one preliminary oxide layer(17) is formed on a substrate. An electrode is formed on the post. The electrode is etched by a self-aligned method to form the post. The preliminary oxide layer is horizontally oxidized by a predetermined dimension from the sidewall of the etched post. © KIPO 2003 ...

SINGLE-LONGITUDINAL-MODE EDGE-EMITTING LASER WITH SIDE GRATING OXIDATION-CONFINEMENT STRUCTURE, AND PREPARATION METHOD THEREFOR

A single-longitudinal-mode edge-emitting laser with a side grating oxidation-confinement structure, and a preparation method therefor. The single-longitudinal-mode edge-emitting laser with a side grating oxidation-confinement structure comprises an N-electrode layer; a substrate (8) arranged on the N-electrode layer; a lower cover layer (7) arranged on the substrate (8); a lower waveguide layer (6) arranged on the lower cover layer (7); an active region (5) arranged on the lower waveguide layer (6); and a ridge strip structure arranged on the active region (5). The ridge strip structure comprises: an upper waveguide layer (4) arranged on the active region (5); an intermediate high-aluminum component layer (3) arranged on the upper waveguide layer (4); an upper cover layer (2) arranged on the intermediate high-aluminum component layer (3); a contact layer (1) arranged on the upper cover layer (2); and a P-electrode layer (9) arranged on the contact layer (1); and a side grating structure ...

LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR

Provided is a high-output light emitting element capable of emitting a single-mode light beam. The light emitting element is provided with a laminated structure (20) formed by sequentially laminating a first compound semiconductor layer (21), an active layer (23), and a second compound semiconductor layer (22) on a substrate (20'), a second electrode (32), and a first electrode (31). The first compound semiconductor layer (21) has a laminated construction of a first clad layer (121A) and a first light guide layer (121B) from the substrate side, and the laminated structure has a ridge stripe structure (20A) configured from the second compound semiconductor layer (22), the active layer (23), and a part (121B') in the thickness direction of the first light guide layer. 6×10-7m Подробнее

SEMICONDUCTOR LASER DEVICE

This semiconductor laser device comprises: a semiconductor layer that includes a light emitting region which has a first width and a pad region which is formed in a region other than the light emitting region and has a second width that exceeds the first width; an insulating layer that covers the light emitting region and the pad region; and a wiring electrode that includes an inner connection region which passes through the insulating layer and is electrically connected to the light emitting region, and an outer connection region which covers the pad region with the insulating layer sandwiched therebetween and is externally connected to a lead.

MULTI-CHANNEL TRANSMITTER OPTICAL SUBASSEMBLY (TOSA) WITH OPPOSING PLACEMENT OF TRANSISTOR OUTLINE (TO) CAN LASER PACKAGES

A multi-channel transmitter optical subassembly (TOSA) including staggered transistor outline (TO) can laser package placement to provide enhanced coupling and optical power is disclosed, and may be used in an optical transceiver for transmitting an optical signal. The TOSA comprises a housing that includes plurality of sidewall openings with each sidewall opening configured to couple to a TO can laser package to provide coarse wavelength division multiplexing. The housing includes at least first and second sidewall openings on a first sidewall, and a third sidewall opening disposed on a sidewall opposing the first sidewall and being positioned at generally a mid-point between the first and second sidewall openings. This staggered and opposing sidewall opening arrangement allows an increased distance between adjacent sidewall openings, and thus, the TOSA may increase optical power and yield by providing additional space for performing post-attachment alignment of TO can laser packages.

EDGE-EMITTING SEMICONDUCTOR LASER

The invention relates to an edge-emitting semiconductor laser comprising - a semiconductor body (1) which comprises at least two stripe emitters (10) that are arranged adjacent to each other in the transverse direction (101), each stripe emitter (10) comprising at least one active zone (2) that is equipped to generate electromagnetic radiation; - at least two facets (11) on the active zones (2), said facets forming at least one resonator (33) for at least one of the stripe emitters (10); and - at least two contact surfaces (3) which are mutually spaced in the transverse direction (101) and which are applied on an outer surface (12) of the semiconductor body (1), wherein - each stripe emitter (10) is uniquely associated with one contact surface (3), - current is impressed into at least one of the stripe emitters (10) via the contact surfaces (3) during the operation of the semiconductor laser (100), and - at least two of the stripe emitters (10) can be electrically operated separately from ...

NEW OPTICAL DEVICES USING A PENTERNARY III-V MATERIAL SYSTEM

The invention relates to the design and processing of a semiconductor optical device. The device is formed of at least four layers of III- V compounds in which one consists of the penternary AlGaInAsSb material. The structure is wet etched in order to form optical ridge waveguides. One such device has incorporated two waveguides which are connected through a new junction design which can be made by wet etching. In one design the junction and waveguides consists of wet etched AlO .90GaO .10AsSb cladding around a core of AlO .28GaO .72AsSb in which an active layer composed of AlO.22InO.22GaO.55AsSb/lnO.29GaO.71AsSb quantum wells is embedded. The resulting device is a erdge junction laser which has single mode emission and emits a narrow line width. We made and tested a device in the 2.34 müm to 2.375 müm wavelength area and found it to have an emission line width of around 0, 5nm .

VERTICAL-CAVITY SURFACE-EMITTING LASER

The vertical-cavity surface-emitting laser (VCSEL) according to one embodiment of the present disclosure comprises: a lower mirror; an upper mirror; an active layer interposed between the lower mirror and the upper mirror; an aperture-forming layer which is interposed between the upper mirror and the active layer and has an oxidation layer and a window layer surrounded by the oxidation layer; a ring-shaped trench which penetrates through the upper mirror, the aperture-forming layer, and the active layer and defines an isolated area therein; and a plurality of oxidation holes which are provided in the isolated area surrounded by the trench and penetrate through the upper mirror and the aperture-forming layer.

A METHOD TO GAAS BASED LASERS AND A GAAS BASED LASER

The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

SEMICONDUCTOR LASER

In a semiconductor laser provided with an active layer and a buried layer which absorbs the laser light emitted from the active layer, the oscillation wavelength of the laser light is in a 650-nm band and the oscillation mode is in a single transverse mode. In addition, the peak of the intensity distribution of the laser light is positioned oppsite to the buried layer with respect to the center of the active layer.

BURIED-RIDGE II-VI LASER DIODE AND METHOD OF FABRICATION

Diode laser II-VI à nervures enterrées ou à hétéro-structure enterrée. Semi-conducteur poly-cristallin II-VI, tel que ZnS, ZnSSe, ZnSe ou CdS déposés par métallisation sous-vide, qui enterre la nervure gravée.

METHOD FOR THE PASSIVATION OF THE MIRROR-TYPE SURFACES OF OPTICAL SEMI-CONDUCTOR ELEMENTS

The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent protective layer is applied in-situ, said layer being inert in relation to the material on the mirror-type surface and the remaining components of a natural oxide. In a preferred embodiment, the optical semi-conductor element is a GaAs-based semi-conductor laser, the reactive and low-energy medium is an atomic hydrogen and the protective layer is made of ZnSe.

SEMICONDUCTOR LASER DIODE WITH A DISTRIBUTED REFLECTOR

L'invention concerne une diode laser équipée d'un guide d'ondes (14) à moulures, comprenant un réflecteur réparti sous forme de réseau d'orifices (22) gravés sur la surface du dispositif de chaque côté du guide d'ondes central.

MECHANICAL PROTECTION FOR SEMICONDUCTOR EDGE-EMITTING RIDGE WAVEGUIDE LASERS

A high speed, directly modulated ridge waveguide laser includes: a ridge structure (404) at a juction surface (412) of the laser chip (400); and a plurality of pads (406) only on non-active areas of the junction surface (412), where the plurality of pads (406) protrude beyond an edge of the ridge structure (404). The laser chip (400) can thus be held by a manufacturing tool (106), such that the manufacturing tool (106) abuts the pads (406) without abutting the ridge structure (404). In this manner, the ridge structure (404) of the laser is protected from damage due contacts by manufacturing tools (106), increasing the device yield of a wafer. By providing the pads (406) only on the non-active areas of the junction surface (412), parasitic capacitance for contacts in the active areas can be properly controlled.

METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT, AND LIGHT-EMITTING SEMICONDUCTOR COMPONENT

The invention relates to a method for producing a light-emitting semiconductor component (100), comprising the steps of: - growing a semiconductor layer sequence (2) with a growth direction in a vertical direction (92), the semiconductor layer sequence being grown with an active layer (3), which is configured and provided for producing light (8) in at least one active region (5) during operation, - forming at least one elevation (4) on a top face of the semiconductor layer sequence, which top face is arranged in the vertical direction, the elevation terminating with a top surface (40) in the vertical direction and with at least one lateral side surface (41) in the lateral direction (90), and the top surface and the at least one lateral side surface being formed at least partially by a first transparent conductive oxide (42). The invention also relates to a light-emitting semiconductor component (100).

High Power Semiconductor Laser Diode

Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability. This is achieved by separating the waveguide ridge into an active main ridge section (4) and at least one separate section (12) located at an end of the laser diode, which may be passive. The separation is provided by a trench or gap (10) in the waveguide ridge. The active waveguide section (4) is at least partly covered by the electrode (6) providing the carriers that does not extend to cover the separate ridge section (12), which thus remains ...

Semiconductor laser device

The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.

Optical Semiconductor device with carrier recombination layer

A p-InP buffer layer is formed on a p-type InP substrate. A selective growth layer consisted of a p-InP clad layer, a SCH-strained MQW layer, and an n-InP clad layer sequentially in stripe form is formed on the buffer layer. On the surface of the buffer layer at both sides of the selective growth portion, a p-InP buried layer, an n-InP blocking layer, a p-InP blocking layer and SCH-MQW carrier recombination layer are selectively grown in the sequential order in a manner that those layer are not grown on the upper surface of the selective growth portion. With burying upper portions of these layers, an n-InP clad burying layer, and an n-InGaAsP contact layer are formed. Then, a surface electrode is formed with covering the entire surface. Also, a back surface electrode is formed on the backside surface of the p-type InP substrate.

Semiconductor laser with semi-insulating current blocking layers

A semiconductor laser includes a semiconductor substrate of a first conductivity type having opposite front and rear surfaces, a double-heterojunction structure including a first conductivity type lower cladding layer, an undoped active layer, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, successively disposed on the front surface of the semiconductor substrate wherein the double-heterojunction structure is a mesa having opposite sides, and a light and current confinement structure disposed on the opposite sides of the mesa for confining laser light and laser driving current within the mesa. The confinement structure includes a first conductivity type mesa embedding layer, a second conductivity type mesa embedding layer, and a semi-insulating InP layer which are successively disposed on the semiconductor substrate contacting the opposite sides of the mesa. In this structure, since the semi-insulating semiconductor layer is not in contact ...

Laser-emitting component having an injection zone of limited width

A vertical-cavity surface-emitting laser component operating at a wavelength lying in the range 1.3 mu m to 1.55 mu m, the component comprising a layer of active material having an injection zone of width that is smaller than the width of the component, said zone emitting radiation when an electrical current is injected therein, the component also comprising an amplifying medium for amplifying the radiation and two mirrors that are reflective at the emission wavelength and disposed respectively above and below the amplifying medium. The amplifying medium includes a circular barrier extending facing the active material, said barrier opposing the passage of current and defining a current-passing channel in its center facing the injection zone, said channel being of a width that is smaller than the width of the injection zone.

Semiconductor light-emitting device with an improved ridge waveguide structure and method of forming the same

The present invention provides a ridge waveguide structure of a cladding layer in a semiconductor light emitting device. The ridge waveguide structure comprises: at least a current injection region; and current non-injection regions adjacent to facets and separating the current injection region from the facets, wherein the current non-injection regions are smaller in height than the at least current injection region, and wherein the at least current injection region and the current non-injection regions have a uniform width at least at a lower level than an intermediate level of the ridge waveguide structure.

Semiconductor laser diode and method of making the same

A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy.

Mesa devices fabricated on channeled substrates

Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

Semiconductor devices with native aluminum oxide regions

A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 DEG C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Method of tuning optical components integrated on a monolithic chip

A method of tuning optical components integrated on a monolithic chip, such as an optical transmitter photonic integrated circuit (TxPIC), is disclosed where a group of first optical components are each fabricated to have an operating wavelength approximating a wavelength on a standardized or predetermined wavelength grid and are each included with a local wavelength tuning component also integrated in the chip. Each of the first optical components is wavelength tuned through their local wavelength tuning component to achieve a closer wavelength response that approximates their wavelength on the wavelength grid.

Integrated modulator-laser structure and a method of producing same

In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe-InP island ...

Semiconductor light emitting device and method of producing the same

To provide a semiconductor light emitting device capable of improving an aspect ratio of a laser beam to make it close to a circular shape and a method of producing the same, a first conductive type first cladding layer 11, an active layer 12, and a second conductive type second cladding layer 17 having a ridge-shaped portion RD as a current narrowing structure are stacked on a substrate 10; wherein the ridge-shaped portion includes a first ridge-shaped layer 15 on the side close to said active layer and having a high bandgap and a second ridge-shaped layer 16 on the side distant from the active layer and having a low bandgap, so that the semiconductor light emitting device is obtained. By using an epitaxial growth method, a first cladding layer, active layer and second conductive type second cladding layer are formed by being stacked on the substrate, a part of the second cladding layer is processed to be a ridge-shaped portion, and the second cladding layer is formed, so that the portion ...

VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter

A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.

Semiconductor laser device and semiconductor laser module

In a semiconductor laser device having a GRIN-SCH-MQW structure, attention is paid to correlation among a lasing wavelength, a refractive index difference between an equivalent refractive index in a region including an active layer and an equivalent refractive index in a region including current blocking layers, and a composition of a barrier layer having a quantum well structure. By finding out an optimum combination of these three parameters, a width of the active layer is made wider than a conventional width, thus preventing occurrence of a kink due to horizontal transverse mode in the active layer.

Method and apparatus for providing an antireflection coating on the output facet of a photonic integrated circuit (PIC) chip

An on-chip photodiode is provided in a photonic integrated circuit (PIC) on a semiconductor chip to monitor or check for antireflection qualities of an AR coating applied to the front facet of the semiconductor chip.

Semiconductor laser diode and semiconductor laser diode assembly containing the same

Provided is a semiconductor laser diode. The semiconductor laser diode includes a first material layer, an active layer, and a second material layer, characterized in that the semiconductor laser diode includes: a ridge waveguide, which is formed in a ridge shape over the second material layer to define a channel defined so that a top material layer of the second material layer is limitedly exposed, and in which a second electrode layer which is in contact with the top material layer of the second material layer via the channel is formed; and a first protrusion, which is positioned at one side of the ridge waveguide and has not less height than that of the ridge waveguide.

Semiconductor optical amplifier

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W out , and W in , W out >W in is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

Semiconductor device

A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

Semiconductor optical element

A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

DFB Laser Diode Having a Lateral Coupling for Large Output Power

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate ( 10 ), at least one active layer ( 40 ) that is arranged on the semiconductor substrate, at least one ridge ( 70 ) that is arranged above the active layer ( 40 ), at least one periodic surface structure ( 110 ) that is arranged next to the ridge ( 70 ) above the active layer ( 40 ) and at least one wave guide layer ( 30, 50 ) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.

Long semiconductor laser cavity in a compact chip

Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

Iii-nitride semiconductor laser device, and method of fabricating the iii- nitride semiconductor laser device

A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.

Broad Area Laser Having an Epitaxial Stack of Layers and Method for the Production Thereof

A broad stripe laser ( 1 ) comprising an epitaxial layer stack ( 2 ), which contains an active, radiation-generating layer ( 21 ) and has a top side ( 22 ) and an underside ( 23 ). The layer stack ( 2 ) has trenches ( 3 ) in which at least one layer of the layer stack ( 2 ) is at least partly removed and which lead from the top side ( 22 ) in the direction of the underside ( 23 ). The layer stack ( 2 ) has on the top side ridges ( 4 ) each adjoining the trenches ( 3 ), such that the layer stack ( 2 ) is embodied in striped fashion on the top side. The ridges ( 4 ) and the trenches ( 3 ) respectively have a width (d 1 , d 2 ) of at most 20 μm.

Gan laser element

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Method of manufacturing a semiconductor laser

Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of 2 μm from one end surface in a resonator direction, λa is the wavelength of light corresponding to the band gap of the active layer disposed at a position that is spaced a distance of equal to or more than ( 3/10)L and ≦( 7/10)L from the one end surface in a resonator direction, “L” is the resonator length, and “Lt” is the length of a transition region provided between the position of the active layer with a band gap corresponding to a light wavelength of λw+2 (nm) and the position of the active layer with a band gap corresponding to a light wavelength of λa−2 (nm) in the resonator direction.

Semiconductor laser module and manufacturing method thereof

To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer.

Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same

A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.

Semiconductor laser manufacturing method and semiconductor laser

Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.

Optical device, modulator module, and method for manufacturing the optical device

An optical device includes a ridge-like optical waveguide portion, a mesa protector portion that is arranged in parallel to the optical waveguide portion, a resin portion that covers upper parts of the mesa protector portion and is disposed at both sides of the mesa protector portion, an electrode that is disposed on the optical waveguide portion, an electrode pad that is disposed on the resin portion located at an opposite side to the optical waveguide portion with respect to the mesa protector portion, and a connection portion that is disposed on the resin portion and electrically connects the electrode to the electrode pad.

Optical semiconductor device, and manufacturing method thereof

The optical semiconductor device includes a spot-size converter formed on a semiconductor substrate. The spot-size converter has a multilayer structure including a light transition region. The multilayer structure includes a lower core layer, and an upper core layer having a refractive index higher than that of the lower core layer. The width of the upper core layer is gradually decreased and the width of the lower core layer is gradually increased in the light transition region. Both sides and an upper side of the multilayer structure are buried by a semi-insulating semiconductor layer in the light transition region. Light incident from one end section of the spot-size converter is propagated to the upper core layer. The light transits from the upper core layer to the lower core layer in the light transition region, is propagated to the lower core layer, and exits from the other end section thereof.

Method for producing semiconductor optical integrated device

A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.

Semiconductor optical integrated device

A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side. 1. A semiconductor light-emitting device comprising:an n-type semiconductor layer comprising at least n-type GaN layer;a p-type semiconductor layer comprising at least p-type GaN layer;an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer and capable of emitting a light;an n-electrode which is contact with the n-type GaN layer and spaced away from the active layer and p-type semiconductor layer; anda p-electrode which is contact with the p-type GaN layer and includes a dot-like nickel oxide region in direct contact with the p-type GaN layer and a Ag layer formed on the dot-like nickel oxide region,wherein the dot-like nickel oxide region is interposed between the p-type GaN layer and the Ag layer.2. The device according to claim 1 , wherein the dot-like nickel oxide region has a film thickness ranging from 1 to 3 nm.3. The device according to claim 1 , wherein the dot-like nickel oxide region is formed to have an area ratio ranging from 50% to 85% based on an entire area of the p-electrode.4. A method of manufacturing a semiconductor light-emitting device according to claim 1 , wherein the p-electrode is formed by a process comprising:forming the dot-like nickel region on the p-type semiconductor layer;forming the Ag layer ...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids. 1. A semiconductor device , comprising:a plurality of first conductivity type semiconductor nanowire cores located over a support;a continuous second conductivity type semiconductor layer extending over and around the cores;a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores; anda first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.2. The device of claim 1 , wherein the device comprises a light emitting diode (LED) device.3. The device of claim 2 , wherein the second conductivity type semiconductor layer directly physically contacts the cores to form a light emitting p-n junction at each core.4. The device of claim 2 , further comprising an active region shell around each nanowire core.5. The device of claim 4 , wherein the active region shell comprises at least one quantum well and the second conductivity type semiconductor layer directly physically contacts the at least one quantum well to form a light emitting p-i-n junction at each nanowire core surrounded by the at least one quantum well shell.6. The device of claim 5 , wherein the first conductivity type comprises n-type claim 5 , the second conductivity type comprises p-type and the first electrode layer comprises a p-electrode layer.7. The device of claim 5 , further comprising a second electrode layer which electrically connects to the n-type nanowire cores.8. The device of claim ...

METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE

There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed. 1. A method of manufacturing a semiconductor laser device , the method comprising:preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device;forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; andcutting, along the scribe line, the production substrate in which the cutting guide groove is formed.2. The method according to claim 1 , wherein the hexagonal-system group III nitride semiconductor substrate is a semiconductor substrate having a semi-polar plane in which a direction realized by inclining a c-axis towards an m-axis at an angle in a range of about ...

Directly-coupled wavelength-tunable external cavity laser

Disclosed is a directly-coupled wavelength-tunable external cavity laser including a gain medium that generates an optical signal by an applied bias current; an optical waveguide structure that is coupled to the gain medium to form a minor surface and causes lasing in the mirror surface when the applied bias current has a threshold or higher; and a radio frequency transmission medium that adds a radio frequency signal to the applied bias current to adjust an operating speed of the optical signal.

WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE

A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction. 1. A waveguide-type optical semiconductor device comprising:a substrate with a main surface; a stacked semiconductor layer including a core layer provided on the main surface of the substrate,', 'a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and', 'a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction;, 'a structure including'}a protrusion portion provided in the pair of stripe-shaped grooves, the protrusion portion including at least one protrusion, the protrusion protruding from the structure in the first direction; anda resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves,wherein the relative position of the protrusion with respect to the structure is fixed, andthe side face of the protrusion intersects with the second direction when viewed from the first direction.2. The waveguide-type optical semiconductor device ...

METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE

A method for producing an integrated optical device includes the steps of preparing a substrate including first and second regions; growing, on the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers, and a first etch-stop layer between the first and second cladding layers; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer, third and fourth cladding layers, and a second etch-stop layer between the third and fourth cladding layers; and forming a ridge structure by etching the second and fourth cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming a first overhang between the first and second cladding layers by selectively etching the first etch-stop layer by wet etching. 1. A method for producing an integrated optical device , comprising the steps of:preparing a substrate including first and second regions arranged in a predetermined direction;growing, on the first and second regions of the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers positioned on the first optical waveguiding layer, and a first etch-stop layer positioned between the first and second cladding layers, the first etch-stop layer having a composition different from compositions of the first and second cladding layers;etching the first stacked semiconductor layer through a first etching mask formed on the first region until the first optical waveguiding layer is exposed;selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer including a second optical waveguiding layer, third and fourth cladding layers positioned on the second optical waveguiding layer, and a second etch-stop layer positioned ...

METHOD FOR PRODUCING INTEGRATED OPTICAL DEVICE

A method for producing an integrated optical device includes the steps of growing, on a substrate including first and second regions, a first stacked semiconductor layer, a first cladding layer, and a side-etching layer; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region, a second stacked semiconductor layer and a second cladding layer; growing a third cladding layer and a contact layer on the first and second stacked semiconductor layers; and forming a ridge structure. The step of etching the first stacked semiconductor layer includes a step of forming an overhang between the first cladding layer and the first etching mask. The step of forming a ridge structure includes first, second, and third wet-etching steps in which the third cladding layer, the side-etching layer and the first and second cladding layers are selectively etched, respectively. 1. A method for producing an integrated optical device , comprising the steps of:preparing a substrate including first and second regions arranged in a predetermined direction;growing, on the first and second regions of the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, a first cladding layer positioned on the first optical waveguiding layer, and a side-etching layer positioned on the first cladding layer, the side-etching layer having a composition different from a composition of the first cladding layer;etching the first stacked semiconductor layer through a first etching mask formed on the first region until the first optical waveguiding layer is exposed;selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer including a second optical waveguiding layer and a second cladding layer positioned on the second optical waveguiding layer, the second optical waveguiding layer being optically coupled to the first optical waveguiding layer ...

SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER, METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY AND OPTICAL APPARATUS EQUIPPED WITH SURFACE-EMITTING LASER ARRAY

A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of the relief structure by means of which a sufficient loss difference can be introduced between the fundamental transverse and higher order transverse mode. Removing the dielectric film on the semiconductor layers and the first-etch stop layer along the second pattern, using a second- and third-etch stop layer are conducted in single step after forming the confinement structure. The relief structure is formed by three layers including a lower, middle and upper layer, and total thickness of three layers is equal to the optical thickness of an odd multiple of ¼ wavelength (λ: oscillation wavelength, n: refractive index of the semiconductor layer). The layer right under the lower layer is the second-etch stop layer and the first-etch stop layer is laid right on this etch stop layer. 1. A method of manufacturing a surface-emitting laser having a plurality of semiconductor layers including a lower reflecting mirror , an active layer and an upper reflecting mirror stacked on a substrate , a light emission portion of the upper reflecting mirror being provided with a surface relief structure formed by using a stepped structure for controlling the reflectance distribution , the surface-emitting laser being produced as a mesa structure , comprising:forming a first dielectric film on the semiconductor layers;forming a first pattern for defining the mesa structure and also forming a second pattern for defining the surface relief structure in the first dielectric film in the single step;removing the surface of the stacked semiconductor layers along the first and second patterns, using the first dielectric film having the first and second patterns formed therein as mask and also a first etch stop layer in the upper reflecting mirror, to form the first and second patterns on the surface of ...

Methods for producing optoelectronic semiconductor components, and optoelectronic semiconductor lasers

A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

Semiconductor laser

A semiconductor laser of an embodiment includes: an optical resonator having a first cladding layer, a ring-shaped active layer on the first cladding layer, a ring-shaped second cladding layer on the active layer, a first electrode inside the ring shape on the first cladding layer, a ring-shaped second electrode on the second cladding layer, a first insulating layer between the first cladding layer and the active layer, formed from an inside wall toward an outside wall of the ring shape, where an outside wall side edge thereof is on an inner side than the outside wall, and a second insulating layer between the active layer and the second cladding layer, formed from the inside wall toward the outside wall, where an outside wall side edge thereof is on an inner side than the outside wall; and an optical waveguide optically coupled to the optical resonator.

METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE

Provided is a method of fabricating a gallium nitride semiconductor which enables activation of a p-type dopant with a heat treatment performed for a relatively short period of time. The fabricating method comprises the step of performing, in a vacuum, a heat treatment of a group III nitride semiconductor region, the group III nitride semiconductor region comprising a gallium nitride semiconductor, the gallium nitride semiconductor including a p-type dopant, the a group III nitride semiconductor region having a group III nitride semiconductor surface inclined with respect to a reference plane perpendicular to a reference axis, and the reference axis extending in a direction of a c-axis of the gallium nitride semiconductor. 1. A method of fabricating a gallium nitride semiconductor of p-type conductivity , comprising the step of:performing, in a vacuum, a heat treatment of a group III nitride semiconductor region, the group III nitride semiconductor region comprising a gallium nitride semiconductor, the gallium nitride semiconductor including a p-type dopant, the a group III nitride semiconductor region having a group III nitride semiconductor surface, the group III nitride semiconductor surface being inclined with respect to a reference plane perpendicular to a reference axis, and the reference axis extending in a direction of a c-axis of the gallium nitride semiconductor.2. The method of fabricating a gallium nitride semiconductor according to claim 1 , further comprising the step of preparing a substrate having a semipolar surface of a hexagonal group III nitride claim 1 , the group III nitride semiconductor region being provided on the semipolar surface of the substrate.3. The method of fabricating a gallium nitride semiconductor according to claim 1 , wherein a degree of vacuum in the heat treatment is equal to or lower than 1×10Torr.4. The method of fabricating a gallium nitride semiconductor according to claim 1 , wherein a degree of vacuum of the heat ...

SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS

A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. 1. A semiconductor light emitting device comprising:a first compound semiconductor layer;an active layer on the first compound semiconductor layer;a second compound semiconductor layer on the active layer, the second compound semiconductor layer including a clad layer and a contact layer in this order proceeding from the active layer; andan electrode on the contact layer, 'the contact layer is smaller than the clad layer.', 'wherein,'}2. The semiconductor light emitting device of claim 1 , wherein the contact layer is substantially the same size as the electrode.3. The semiconductor light emitting device of claim 1 , wherein the electrode covers the contact layer.4. The semiconductor light emitting device of claim 2 , wherein the average area Sof the contact layer and the average area Sof the electrode satisfy the relation of:{'br': None, 'i': S', '/S, 'sub': 2', '1, '½≦≦2.'}5. The semiconductor light emitting device of claim 2 , wherein the average area Sof the contact layer and the average area Sof the electrode satisfy the relation of:{'br': None, 'i': S', '/S, 'sub': 2', '1, '=1.05.'}6. The semiconductor light emitting device of claim 1 , wherein the active layer includes a GaInP compound semiconductor layer and is doped with an impurity.7. The semiconductor light emitting device of claim 6 , wherein the doping concentration of an n-type impurity in the active layer is in the range of 5×10/cmto 1×10/cm.8. The semiconductor light emitting device of claim 6 , wherein the first compound semiconductor layer includes a first AlGaInP compound semiconductor layer claim 6 , and the clad layer is a second AlGaInP compound semiconductor layer.9. The semiconductor light emitting device of claim 8 ...

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3. 1. An optoelectronic device , comprising:a substrate having a first surface and a normal direction perpendicular to the first surface;a first semiconductor formed on the first surface of the substrate, comprising a plurality of hollow components;a first protection layer formed on the sidewall of the plurality of the hollow components; anda first buffer layer formed on the first semiconductor layer wherein the first buffer layer having a first surface and a second surface opposite to the first surface wherein the plurality of hollow components is formed among the first semiconductor layer, the first surface of the substrate, and the first surface of the first buffer layer.2. The optoelectronic device of claim 1 , wherein the plurality of the hollow components is formed among the first semiconductor layer claim 1 , the first surface of the substrate claim 1 , and the first surface of the first buffer layer claim 1 , and at least two hollow components link into a mesh or porous structure.3. The optoelectronic device of claim 2 , wherein the plurality of the hollow components can be formed as ...

Group-iii nitride semiconductor laser device

A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Semiconductor Laser Device

Beams of light having wavelengths different from each other are generated in a plurality of light generation portions, the beams of light each generated in the plurality of light generation portions are reflected by a monolithic integrated mirror and are incident to a condenser lens, and emission positions on the condenser lens of the beams of light each generated in the plurality of light generation portions deviate from a central position of the condenser lens by a predetermined amount.

OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part. 1. An optical semiconductor device comprising:a semiconductor substrate;a semiconductor laser part on the semiconductor substrate and having a vertical ridge; andan optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.2. The optical semiconductor device according to claim 1 , wherein width of a bottom of the inverted-mesa ridge of the optical modulator part is d1 claim 1 , width of a bottom of the vertical ridge of the semiconductor laser part is d2 claim 1 , and d1+0.2 μm>d2 is satisfied.3. The optical semiconductor device according to claim 1 , further comprising a passive waveguide part on the semiconductor substrate claim 1 , having a vertical ridge claim 1 , and guiding light emitted by the semiconductor laser part to the optical modulator part.4. The optical semiconductor device according to claim 1 , wherein the optical modulator part is a Mach-Zehnder modulator.5. An optical semiconductor device comprising:a semiconductor substrate;a semiconductor laser part on the semiconductor substrate and having a vertical ridge; anda semiconductor optical amplifier part on the semiconductor substrate, having an inverted-mesa ridge, and amplifying light emitted by the semiconductor laser part.6. The optical semiconductor device according to claim 5 , further comprising an optical wave combiner claim 5 , whereinthe semiconductor laser part includes a plurality of lasers integrated on the semiconductor substrate, andthe optical wave combiner combines light emitted from the plurality of lasers and inputs the light combined to the semiconductor optical amplifier part.7. A ...

GaN-BASED LASER DEVICE

In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction. 1. A GaN-based laser device having a GaN-based semiconductor stacked-layered structure , whereinsaid semiconductor stacked-layered structure includes a mesa portion and a ridge stripe,said mesa portion includes a light-emitting layer,a pair of side surfaces of said mesa portion are titled with respect to a plane perpendicular to said light-emitting layer,said ridge strip is formed above said light-emitting layer so as to form a stripe-shaped waveguide,a width of said ridge strip is smaller than a width of said mesa portion, andsaid pair of side surfaces and said plane perpendicular to said light-emitting layer are parallel to a lengthwise direction of said ridge stripe.2. The GaN-based laser device according to claim 1 , wherein the width of said mesa portion is decreased toward a top of the mesa portion.3. The GaN-based laser device according to claim 1 , wherein each of said pair of the side surfaces of said mesa portion is titled at an angle of 15 degrees or more and less than 90 degrees with respect to said plane perpendicular to said light-emitting layer. This is application is a continuation of U.S. application Ser. No. 13/438,423 filed Apr. 3, 2012, which is a divisional of U.S. application Ser. No. 12/982,231 filed Dec. 30, 2010, now U.S. Patent No.8,170,076, which is a divisional of U.S. application Ser. No. 10/932,775, filed Sep. 1, 2004, now U.S. Pat. No. 7,899,100, which is a continuation of International Application No. PCT/JP03/01959, ...

METHOD OF MANUFACTURING A LIGHT EMITTING DIODE

A method () of making a semiconductor device, for example a light emitting diode. The method () includes providing () a semi-conductor wafer, and providing () a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer () over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials () provided over the selectively etched semiconductor wafer. 2. A method according to wherein the processing steps include providing a mask over the protective layer.3. A method according to wherein the step of providing the mask comprises providing a mask layer over the protective layer and then etching through areas of the mask layer to form the mask.4. A method according to wherein the step of providing the mask further comprises providing a metal layer over said mask layer and annealing the metal layer to form metal islands which define the etch area between them.5. A method according to wherein the mask defines an etch area and the processing steps include etching into the semiconductor wafer under the etch area.6. A method according to wherein some of the processing steps form nano-pillars in the wafer with gaps between them claim 1 , and the steps include filling the gaps with material and etching back the material.7. A method according to wherein the processing steps include removing the mask claim 2 ,8. A method according to further comprising treating the etched semiconductor wafer with acid.9. A method according to wherein the acid is nitric acid at a temperature of at least 100 degrees Celsius.10. A method according to in which the duration of the treating step is at least 1 minute.11. A method according to in which the acid comprises at ...

Semiconductor Device And Method For Producing Light And Laser Emission

A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.

Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser device

A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.

Laser Light Source

A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation At least one of the functional layers is designed as a ridge of the ridge waveguide structure The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.

Optical amplifier device

An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of the waveguide.

CONFORMAL METALLIZATION PROCESS FOR THE FABRICATION OF SEMICONDUCTOR LASER DEVICES

A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material. 110-. (canceled)11. A semiconductor laser device comprising:a semiconductor structure at least part of which is in the form of a mesa structure having a flat top;a passivation layer over the mesa structure, the passivation layer defining a contact opening on the flat top of the mesa structure; anda metal contact portion contacting the semiconductor via the contact opening,wherein the contact opening defined by the passivation layer has a smaller area than the flat top of the mesa structure,wherein the metal contact portion comprises at least one layer comprising gold and a layer comprising platinum disposed between said at least one layer comprising gold and said semiconductor structure, andwherein said at least one layer comprising gold comprises a first gold layer and a second gold layer separated by a chromium layer.12. The semiconductor laser device of claim 11 , wherein the mesa structure has sloping sidewalls and the passivation layer covers the sloping sidewalls and the periphery of the flat top of the mesa structure.13. The semiconductor laser device of claim 11 , wherein said platinum layer has a thickness of at least 80 nanometers.14. (canceled)15. The ...

Efficient Third-Order Distributed Feedback Laser with Enhanced Beam Pattern

A third-order distributed feedback laser has an active medium disposed on a substrate as a linear array of segments having a series of periodically spaced interstices therebetween and a first conductive layer disposed on a surface of the active medium on each of the segments and along a strip from each of the segments to a conductive electrical contact pad for application of current along a path including the active medium. Upon application of a current through the active medium, the active medium functions as an optical waveguide, and there is established an alternating electric field, at a THz frequency, both in the active medium and emerging from the interstices. Spacing of adjacent segments is approximately half of a wavelength of the THz frequency in free space or an odd integral multiple thereof, so that the linear array has a coherence length greater than the length of the linear array. 1. A third-order distributed feedback laser comprising:a substrate;an active medium having a first surface disposed on the substrate and a second surface opposed to the first surface, the active medium being disposed on the substrate as a linear array of segments having a series of periodically spaced interstices therebetween, and wherein the linear array has a length;a first conductive layer disposed on the second surface of the active medium on each of the segments and along a strip from each of the segments to a conductive electrical contact pad for application of current along a path including the active medium;such that upon application of a current through the active medium, the active medium functions as an optical waveguide, and there is established an alternating electric field, at a THz frequency, both in the active medium and emerging from the interstices, wherein the electric fields emerging from any adjacent interstices are 180° out of phase with one another and geometry of segments and interstices defines the frequency, andwherein spacing of adjacent segments is ...

OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THEREOF

A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively. 1. A method of fabricating an optoelectronic component , performed on a multi-layered wafer disposed on a substrate , the method comprising the steps of:performing one or more etches to the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate;selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; andproviding a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.2. The method of claim 1 , wherein the III-V semiconductor cladding is undoped.3. The method of claim 1 , wherein the III-V semiconductor cladding is doped with iron.4. The method of claim 1 , wherein the III-V semiconductor cladding is formed from one of: InP claim 1 , GaAs claim 1 , GaSb claim 1 , or GaP.5. The method of claim 1 , wherein the multi-layered wafer includes one ...

High-q optical resonator with monolithically integrated waveguide

A ring optical resonator is formed on a substrate. An outer circumferential surface of the resonator substantially confines one or more circumferential resonant optical modes. The resonator is positioned above a void formed in the substrate and is supported above the void by a portion of a material layer on the substrate that extends radially inward above the void from an outer circumferential edge of the void to the outer circumferential surface of the resonator. An optical waveguide can be integrally formed on the substrate and traverses a portion of the material layer above the void. The optical waveguide and the ring optical resonator are arranged and positioned so as to establish evanescent optical coupling between them. Q-factors of 10 8 or more have been achieved with a silica resonator and silicon nitride waveguide integrally formed on a silicon substrate.

LASER CHIP WITH MULTIPLE OUTPUTS ON COMMON SIDE

A laser chip including a laser cavity that produces multiple laser outputs. A laser waveguide guides light through the laser cavity and has multiple output facets. Each of the laser outputs passes through one of the output facets. The laser waveguide guides the laser outputs such that the angle between the exit direction of different laser outputs is less than 180°. The exit direction for a laser output is the direction of propagation of light in the laser waveguide at one of the output facets. 1. An optical system , comprising: a laser waveguide guiding light through the laser cavity having multiple output facets, each of the laser outputs passing through one of the output facets,', 'the laser waveguide guiding the laser outputs such that an angle between an exit direction for different laser outputs is less than 180°, the exit direction for a laser output being a direction of propagation of light in the laser waveguide at one of the output facets; and', 'a planar optical device that receives the laser outputs from the laser chip without returning the laser outputs to the laser cavity., 'a laser chip including a laser cavity that produces laser outputs,'}2. (canceled)3. The system of claim 1 , wherein the optical device is constructed on a silicon-on-insulator wafer.4. The system of claim 1 , wherein the angle between the exit directions is less than 90°.5. The system of claim 1 , wherein the angle between the exit directions is less than 10°.6. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and at least two of the laser outputs cross the same lateral side.7. The system of claim 1 , wherein the laser chip includes lateral sides between a top side and a bottom side and the laser chip includes an anti-reflective coating on only one of the lateral sides.8. The system of claim 1 , wherein a medium through which the laser waveguide guides the light has a chemical composition that is constant along the length of ...

Semiconductor Integrated Optics Element and Production Method Therefor

A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other. 1. A semiconductor optical integrated element comprising a distributed feedback (DFB) laser , an electroabsorption (EA) modulator , and a semiconductor optical amplifier (SOA) that are monolithically integrated on an identical substrate and that are disposed in an order of the DFB laser , the EA modulator , and the SOA along a light emitting direction ,wherein a plurality of the semiconductor optical integrated elements is arranged one-dimensionally along a direction orthogonal to the light emitting direction to constitute a semiconductor bar such that optical axes of the semiconductor optical integrated elements are aligned and that the semiconductor optical integrated elements adjacent to each other share an identical cleavage end face as a light emission surface,wherein each of the semiconductor optical integrated elements in the semiconductor bar has a connection wiring part to electrically connect an electrode of the SOA and an electrode of the DFB laser together, andwherein the connection wiring part is formed ...

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE

A group-III nitride semiconductor laser device includes a GaN substrate, and an active layer provided on the GaN substrate, in which the GaN substrate has an oxygen concentration of 5×10cmor more, and an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength. 1. A group-III nitride semiconductor laser device , comprising:a GaN substrate; andan active layer provided on the GaN substrate,{'sup': 19', '−3, 'wherein the GaN substrate has an oxygen concentration of 5×10cmor more, and'}an absorption coefficient of the GaN substrate with respect to an oscillation wavelength of the active layer is greater than an absorption coefficient of the active layer with respect to the oscillation wavelength.2. The group-III nitride semiconductor laser device of claim 1 ,{'sup': 2', '−3, 'wherein the GaN substrate has an oxygen concentration of 1×10cmor more.'}3. The group-III nitride semiconductor laser device of claim 1 ,{'sup': '−1', 'wherein the GaN substrate has a light absorption coefficient of 10 cmor more.'}4. The group-III nitride semiconductor laser device of claim 1 ,wherein the GaN substrate has an n-type electrical conductivity. The present disclosure relates to a group-III nitride semiconductor laser device.Group-III nitride crystals such as GaN are expected to be applied to next-generation optical devices such as a high-power light emitting diode (LED) for illumination, a laser display, and a laser diode (LD) for a laser processing machine, new-generation electronic devices such as a high-power transistor mounted on an electric vehicle (EV) and a plug-in hybrid vehicle (PHV), or the like. In order to improve performance of the optical and electronic devices using the group-III nitride crystals, it is desirable that a substrate as a base material is constituted with a high-quality group-III nitride single crystal ...

High Power Laser Grid Structure

Disclosed herein are various embodiments for laser apparatuses. In an example embodiment, the laser apparatus comprises (1) a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting and comprises a plurality of laser regions within a single mesa structure, each laser region having an aperture through which laser beams are controllably emitted, (2) a micro-lens array located on the back of the laser-emitting epitaxial structure, wherein each micro-lens of the micro-lens array is aligned with a laser region of the laser-emitting epitaxial structure, and (3) a non-coherent beam combiner positioned to non-coherently combine a plurality of laser beams emitted from the apertures. 1. An apparatus comprising:a laser-emitting epitaxial structure having a front and a back, wherein the laser-emitting epitaxial structure is back-emitting and comprises a plurality of laser regions within a single mesa structure, each laser region having an aperture through which laser beams are controllably emitted;a micro-lens array located on the back of the laser-emitting epitaxial structure, wherein each micro-lens of the micro-lens array is aligned with a laser region of the laser-emitting epitaxial structure; anda non-coherent beam combiner positioned to non-coherently combine a plurality of laser beams emitted from the apertures.2. The apparatus of wherein each of a plurality of the laser regions comprises a laser cavity that extends to the back of the laser-emitting epitaxial structure.3. The apparatus of wherein each of the laser cavities has an optical axis for laser beam emissions claim 2 , wherein the optical axes are perpendicular to the back of the laser-emitting epitaxial structure.4. The apparatus of wherein the micro-lenses are covered with reflective coatings to reflect laser light from the emitted laser beams back through the laser cavity.5. The apparatus of wherein the micro-lenses have a smooth radius of ...

SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, AND WELDING LASER LIGHT SOURCE SYSTEM

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer. 1. A semiconductor laser device that lases in a multiple transverse mode , comprising:a substrate having a main surface; anda stacked structure including a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer that are sequentially stacked above the main surface of the substrate,wherein the second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region,a pair of side faces is formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer,the active layer has a second width greater than a first width of the opening,the pair of side faces in at least part of the first conductivity-side semiconductor layer is inclined to the main surface of the substrate, anda maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of a normal ...

LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. 226-. (canceled) This is a Continuation of application Ser. No. 12/078,681, filed on Apr. 3, 2008. The present invention contains subject matter related to Japanese Patent Application JP 2007-109654 filed in the Japanese Patent Office on Apr. 18, 2007, the entire contents of which are incorporated herein by reference.1. Field of the InventionThe present invention relates to a light-emitting element and a method for manufacturing the same.2. Description of the Related ArtIn a surface-emitting laser element, on a substrate, for example, an active layer having a multiple quantum well structure is disposed in a cavity sandwiched between two mirror layers provided on upper and lower sides thereof, light emitted from the active layer under current injection is confined, and thus laser oscillation is caused. In such a surface-emitting laser element, a cylindrical mesa structure is usually employed, for example, as disclosed in Japanese Unexamined Patent Application Publication No. 2005-026625. Specifically, for example, a cylindrical mesa structure with a diameter of about 30 μm is formed by dry etching or ...

FLUID ANALYZER

A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface. 1. A fluid analyzer comprising:a substrate;a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface;a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction; andan optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.2. The fluid analyzer according to claim 1 ,wherein an optical resonator is formed between the first light-emitting surface and the second light-emitting surface.3. The fluid analyzer according to claim 2 ,wherein the quantum cascade laser is formed as a Fabry-Perot element oscillating in a multi-mode.4. The fluid analyzer according to claim 2 ,wherein the quantum cascade laser is formed as a distributed feedback element oscillating in a single mode, anda length of the optical path of the light up to the optical ...

Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions. 1. An optical device comprising:a gallium and nitrogen containing substrate including a {20-21} crystalline surface region orientation;an n-type cladding material overlying the n-type gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;an active region comprising at least three quantum wells, each of the quantum wells having a thickness of 1 nm and greater, and at least two barrier layers, each of the barrier layers having a thickness ranging from about 1.5 nm to about 5 nm, each of the barrier layers being configured between a pair of quantum wells;a p-type cladding material overlying the active region, the p-type cladding material being substantially free from an aluminum bearing material; andwherein the active region is configured to operate at a forward voltage of less than 7 v for an output power of 60 mW and greater.2. The device of wherein the active region comprises at least three quantum well regions; and further comprises a p++ contact region overlying the p-type cladding material; wherein the substantially free from the aluminum bearing material is about 2% and less atomic percent.3. The device of wherein the active region comprises at least four quantum well regions; and further comprises a p++ contact region overlying the p-type cladding material; wherein the substantially free from aluminum bearing material is about 1 and less atomic percent.4. The device of wherein the active region comprises at least four quantum wells.5. The device of wherein the active region comprises at least five quantum wells.6. The device of wherein the active region comprises at least six quantum wells.7. The device of wherein the active region comprises at least seven quantum wells.8. The device of wherein the barrier layers are at least about 2.5 nm to about 3.5 nm in thickness.9. ...

BONDING INTERFACE LAYER

An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer. 1. A device comprising:a first layer formed of a silicon (Si)—based material;a second layer to be bonded to the first layer, wherein the first and second layers are materials that cause gas byproduct trapping when bonded, and wherein the second layer includes an optical component to interact with the first layer to perform a photonic device operation; anda bonding interface layer that establishes a separation distance of less than 1,000 nanometers between the first and second layers for the photonic device operation, the bonding interface layer disposed between the first layer and the second layer to prevent void formation and to facilitate bonding between the first layer and the second layer, wherein the bonding interface layer includes a material selected from the group consisting of HfO2, Y2O3, and ZrO2 and serves as a high dielectric constant material for the photonic device operation.2. (canceled)3. The device of claim 1 , wherein the optical component of the second layer comprises a photonic laser.4. The device of claim 1 , wherein the second layer is formed as a microring.5. The device of claim 1 , wherein the second layer is formed to include a straight ridge shape.6. The device of claim 1 , wherein the first layer includes a feature for optical mode confinement claim 1 , to interact optically with the second layer.7. The device of claim 1 , wherein the first layer includes a pattern providing an optical ...

MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch. 132.-. (canceled)33. A method for manufacturing a laser diode device , the method comprising:providing a gallium and nitrogen containing substrate having a surface region;forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer ...

Semiconductor laser

A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

SURFACE-EMMITING LASER COMPRISING SURFACE GRATINGS

A surface-emitting laser, which is a ridge waveguide structure, including: a substrate, a first cladding layer, an active layer, a conductive layer, a second cladding layer; the Bragg gratings is etched on the surface of the ridge waveguide; the two upper electrodes are disposed on both sides of the ridge waveguide; two grooves are formed between the ridge waveguide and each of the two upper electrodes; the first waveguide cladding layer includes one or more current confinement regions; or a buried tunnel junction is formed in the second cladding layer for limiting current. The Bragg gratings comprise two first-order gratings and one second-order grating placed between two first-order gratings. 1. A surface emitting laser , comprising:a substrate;two lower electrodes;a first cladding layer;an active layer;a conductive layer;a second cladding layer;a ridge waveguide; andtwo upper electrodes;wherein:the second cladding layer comprises a central region and two side regions; the ridge waveguide is disposed on the central region and the two upper electrodes are disposed on the two side regions, respectively;the ridge waveguide comprises a plurality of Bragg gratings;the two upper electrodes are disposed on both sides of the ridge waveguide, respectively; and the two lower electrodes are disposed outside the two upper electrodes, respectively;the two lower electrodes are disposed on two edges of the first cladding layer, respectively;two grooves are formed between the ridge waveguide and each of the two upper electrodes, respectively;the active layer is disposed on the first cladding layer; and the conductive layer is disposed on the active layer;the ridge waveguide is electrically connected to the two upper electrodes via the conductive layer; andthe first cladding layer or the second cladding layer comprises a resistive region.2. The laser of claim 1 , wherein the plurality of Bragg gratings comprises one second-order grating and two first-order gratings; a period of ...

SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids. 1. A surface emission laser formed of a group III nitride semiconductor comprising:a first conductivity type first clad layer;a first conductivity type first guide layer on the first clad layer;a light-emitting layer on the first guide layer;a second guide layer on the light-emitting layer; anda second conductivity type second clad layer on the second guide layer, the second clad layer having a conductivity type opposite to the first conductivity type,wherein:the first guide layer or the second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer, andthe voids have a polygonal prism structure or an oval columnar structure having a polygonal shape or an oval shape with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids by an inclination angle a2. The surface emission laser according to claim 1 , wherein the surface parallel to the first guide layer is a (0001 ...

QUANTUM CASCADE LASER

A quantum cascade laser includes a laser structure including a semiconductor stack and a semiconductor support, the laser structure having a first end face and a second end face opposite the first end face. The semiconductor stack is disposed on the semiconductor support. The laser structure includes a semiconductor mesa and a buried region, the semiconductor mesa including a core layer, and the buried region embedding the semiconductor mesa. The laser structure includes a first region, a second region, and a third region. The third region is provided between the first region and the second region. The first region includes the first end face. The semiconductor mesa includes a first stripe portion, a second stripe portion, and a first tapered portion, respectively, in the first region, the second region, and the third region. The first stripe portion and the second stripe portion have different mesa widths. 1. A quantum cascade laser comprising:a laser structure including a semiconductor stack and a semiconductor support, the laser structure having a first end face and a second end face opposite the first end face,wherein the semiconductor stack is disposed on the semiconductor support,the laser structure includes a semiconductor mesa and a buried region, the semiconductor mesa including a core layer, and the buried region embedding the semiconductor mesa,the laser structure includes a first region, a second region, and a third region,the third region is provided between the first region and the second region,the first region includes the first end face,the semiconductor mesa includes a first stripe portion, a second stripe portion, and a first tapered portion, respectively, in the first region, the second region, and the third region, andthe first stripe portion and the second stripe portion have different mesa widths.2. The quantum cascade laser of claim 1 , wherein the semiconductor mesa includes a semiconductor layer forming a grating structure in the second ...

LASER DIODE WITH IMPROVED ELECTRICAL CONDUCTION PROPERTIES

The invention relates to a laser diode () which has at least one active layer () which is arranged within a resonator () and is operatively connected to a outcoupling element (), and further at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along a longitudinal axis (X) of the active layer () is less than 20 μm, and a projection of the resistor elements () on the active layer () along the first axis (Z) overlap with at least 10% of the active layer (). 110. A laser diode () comprising:{'b': 12', '14', '16', '18', '12', '14', '20', '22', '1', '12', '20', '2', '12', '22', '18', '1', '12', '20', '22', '22', '24', '26', '24', '3', '24', '1', '12', '24', '12', '1', '12, 'at least one active layer () disposed within a resonator () and operatively connected to an outcoupling element (), at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the maximum width (W) of the active layer () in the first section () differs from the maximum width (W) of the active layer () in the second section (), and a projection of the contact layer () along a first axis (Z) extending perpendicular to the active layer (), overlaps with the first section () as well as with the second section (), wherein, the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along ...

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

QUANTUM CASCADE LASER WITH HIGH EFFICIENCY OPERATION AND RELATED SYSTEMS AND METHODS

A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region. 1. A quantum cascade laser (QCL) comprising:a substrate; anda sequence of semiconductor epitaxial layers adjacent said substrate and defining an active region, an injector region adjacent said active region, and a waveguide optically coupled to said active region;said active region comprising a plurality of stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions, said waveguide and said active region defining a two-level ridge configuration, a first level ridge extending into said active region, a second level ridge extending to a depth less than that of the first level ridge.2. The QCL according to wherein the upper laser level has an upper laser level average coordinate and the lower laser level has a lower laser level average coordinate; and wherein the upper laser level average coordinate and the lower laser level average coordinate are derived based upon ∫xψdx; wherein ω is a given wave function of a given laser level; wherein x is a position along the QCL; and wherein dx is a differential of x.3. The QCL according to wherein said active region has a width exceeding 15 μm.4. The QCL according to wherein ...

OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS

Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed. 14-. (canceled)5. A method for manufacturing an optical device , the method comprising:{'sup': 7', '−2, 'providing a gallium nitride substrate member having a semipolar crystalline surface region, the substrate member having a thickness of less than 500 microns, the gallium and nitride substrate member characterized by a dislocation density of less than 10cm, the semipolar surface region having a root mean square surface roughness of 10 nm and less over a 5 micron by 5 micron analysis area, the semipolar surface region being characterized by a specified off-set from a (20-21) semipolar plane;'}{'sup': '−3', 'forming a surface reconstruction region overlying the semipolar crystalline surface region, the surface reconstruction region having an oxygen bearing concentration of greater than 1E17 cm;'}{'sup': −3', '−3, 'forming an n-type cladding layer comprising a first quaternary alloy, the first quaternary alloy comprising an aluminum bearing species, an indium bearing species, a gallium bearing species, and a nitrogen bearing species overlying the surface region, the n-type cladding layer having a thickness from 100 nm to 4000 nm with an n-type doping level of 1E17 cmto 6E18 cm;'}forming a first gallium and nitrogen containing epitaxial material comprising a first portion characterized by a first indium concentration, a second portion characterized by a second indium concentration, and a third portion characterized by a third indium concentration overlying the n-type cladding layer;forming an n-side separate confining heterostructure (SCH) waveguiding layer overlying the n-type cladding layer, the n-side SCH waveguide layer comprising InGaN with a molar fraction of InN of between 1% and 8% and having a thickness from 30 nm to 150 nm;forming a multiple quantum well active region overlying the n-side SCH waveguiding layer, the multiple quantum well ...

OPTICAL SEMICONDUCTOR DEVICE

An optical semiconductor device includes: a mesa stripe structure including an n-type cladding layer, an active layer, and a p-type cladding layer laid one on another; and a buried layer buried on opposite sides of the mesa stripe structure, wherein the active layer is a multiple quantum well structure having well layers and carbon-doped barrier layers, the buried layer includes a p-type semiconductor layer and an Fe-doped or Ru-doped high-resistance semiconductor layer laid one on another, side surfaces of the n-type cladding layer are covered with the p-type semiconductor layer and are not contiguous with the high-resistance semiconductor layer, and side surfaces of the active layer are not contiguous with the p-type semiconductor layer. 1. An optical semiconductor device comprising:a mesa stripe structure including an n-type cladding layer, an active layer, and a p-type cladding layer laid one on another; anda buried layer buried on opposite sides of the mesa stripe structure,wherein the active layer is a multiple quantum well structure having well layers and carbon-doped barrier layers,the buried layer includes a p-type semiconductor layer and an Fe-doped or Ru-doped high-resistance semiconductor layer laid one on another,side surfaces of the n-type cladding layer are covered with the p-type semiconductor layer and are not contiguous with the high-resistance semiconductor layer, andside surfaces of the active layer are not contiguous with the p-type semiconductor layer.2. The optical semiconductor device according to claim 1 , wherein the side surfaces of the active layer project on the buried layer side relative to the side surfaces of the n-type cladding layer and the p-type cladding layer.3. The optical semiconductor device according to claim 1 , wherein a width of the active layer is smaller than widths of the n-type cladding layer and the p-type cladding layer.4. The optical semiconductor device according to claim 1 , further comprising a low-carrier- ...

Wavelength tunable laser device and laser module

A wavelength tunable laser device includes: a laser cavity formed of a grating and a reflecting mirror including a ring resonator filter; a gain portion; and a phase adjusting portion. The grating creates a first comb-shaped reflection spectrum. The ring resonator filter includes a ring-shaped waveguide and two arms and creates a second comb-shaped reflection spectrum having peaks of a narrower full width than peaks in the first comb-shaped reflection spectrum at a wavelength interval different from that of the first comb-shaped reflection spectrum. One of the peaks in the first comb-shaped reflection spectrum and one of the peaks in the second comb-shaped reflection spectrum are overlapped on a wavelength axis, and a spacing between cavity modes is narrower than the full width at half maximum of the peaks in the first comb-shaped reflection spectrum.

PHOTONIC TRANSMITTER

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 μm, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material. 110.-. (canceled)11. A photonic transmitter , comprising: a first layer disposed directly on the substrate and comprising single-crystal silicon encapsulated in a dielectric material,', 'a second layer disposed directly on the first layer and comprising a dielectric material, and', 'a third layer disposed directly on the second layer and comprising a III-V gain material and a doped III-V crystalline material, wherein the III-V gain material and the doped III-V crystalline material are encapsulated in a dielectric material;, 'a stack comprising a substrate and the following layers successively stacked one on top of the other and each mainly lying parallel to a plane of the substrate a first waveguide made of silicon structured in the single-crystal silicon of the first layer, and', 'a second waveguide made of III-V gain material structured in the III-V gain material of the third layer, the first and second waveguides being optically coupled to each other by adiabatic coupling and being separated from each other by a first segment of the second layer, wherein in an interior of the first segment of the second layer, a thickness of the dielectric material ...

METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE INCLUDING PHOSPHOR PIECES

A method of manufacturing a light-emitting device includes a step of providing first phosphor sheets , a step of providing second phosphor sheets , a step of providing a light-emitting element , a selection step of selecting a combination of one of the first phosphor sheets and one of the second phosphor sheets on the basis of a wavelength conversion characteristic of each of the first phosphor sheets and a wavelength conversion characteristic of each of the second phosphor sheets , a step of obtaining a plurality of first phosphor pieces and a plurality of second phosphor pieces from the selected first phosphor sheet and the selected second phosphor sheet , and a step of disposing one of the first phosphor pieces and one of the second phosphor pieces on or above the light-emitting element 1. A method of manufacturing a light-emitting device , the method comprising:providing a plurality of first phosphor sheets;providing a plurality of second phosphor sheets;providing a plurality of light-emitting elements;selecting a combination of one of the first phosphor sheets and one of the second phosphor sheets based on a wavelength conversion characteristic of each of the first phosphor sheets and a wavelength conversion characteristic of each of the second phosphor sheets;disposing the plurality of light-emitting elements on or above a layered sheet in which the selected first phosphor sheet and the selected second phosphor sheet are layered; anddividing the layered sheet.2. The method of manufacturing a light-emitting device according to claim 1 , wherein the layered sheet is divided in units of the light-emitting elements in the step of dividing the layered sheet.3. A method of manufacturing a light-emitting device claim 1 , the method comprising;providing a plurality of first phosphor sheets;providing a plurality of second phosphor sheets;providing a light-emitting element;selecting a combination of one of the first phosphor sheets and one of the second phosphor sheets ...

OPTICAL SEMICONDUCTOR DEVICE

Provided is an optical semiconductor device including a laminate structural body in which an n-type compound semiconductor layer , an active layer , and a p-type compound semiconductor layer are laminated in this order. The active layer includes a multiquantum well structure including a tunnel barrier layer , and a compositional variation of a well layer adjacent to the p-type compound semiconductor layer is greater than a compositional variation of another well layer . Band gap energy of the well layer adjacent to the p-type compound semiconductor layer is smaller than band gap energy of the other well layer . A thickness of the well layer adjacent to the p-type compound semiconductor layer is greater than a thickness of the other well layer . 1. An optical semiconductor device comprising a laminate structural body in which an n-type compound semiconductor layer , an active layer , and a p-type compound semiconductor layer are laminated in this order ,wherein the active layer includes a multiquantum well structure including a tunnel barrier layer, anda compositional variation of a well layer adjacent to the p-type compound semiconductor layer is greater than a compositional variation of another well layer.2. The optical semiconductor device according to claim 1 , wherein band gap energy of the well layer adjacent to the p-type compound semiconductor layer is smaller than band gap energy of the other well layer.3. The optical semiconductor device according to claim 1 , wherein a thickness of the well layer adjacent to the p-type compound semiconductor layer is greater than a thickness of the other well layer.4. The optical semiconductor device according to claim 3 , wherein band gap energy of the well layer adjacent to the p-type compound semiconductor layer is smaller than band gap energy of the other well layer.5. The optical semiconductor device according to claim 1 , wherein the tunnel barrier layer is formed between a well layer and a barrier layer.6. An ...

VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER

A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG. 117-. (canceled)18. A device comprising:a mesa comprising a plurality of semiconductor layers of an epitaxial layer stack grown on a semiconductor substrate;the plurality of semiconductor layers comprising a lower emitter layer, a lower separate confinement heterostructure, a multi-quantum-well active gain region, an upper separate confinement heterostructure, and an upper emitter layer; a first electrical contact to the upper emitter layer ;', 'a second electrical contact to the lower emitter layer;', 'wherein the upper and lower separate confinement heterostructures provide vertical optical confinement of the fundamental optical mode; and', 'at least one layer of the plurality of semiconductor layers is structured to define a lateral profile of refractive index of the mesa that provides lateral optical confinement of the fundamental optical mode and lateral confinement of current injection., 'a surface-etched grating etched into a top surface of the mesa to form a vertically coupled waveguide grating configured to support a fundamental optical mode,'}19. ...

GALNASSB SOLID SOLUTION-BASED HETEROSTRUCTURE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DIODE BASED ON SAID HETEROSTRUCTURE

The provided heterostructure includes a substrate containing GaSb, a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate; an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer; a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer; a contact layer containing GaSb, the contact layer being disposed over the confining layer, wherein the buffer layer contains less indium (In) than the active layer. The provided heterostructure is characterized by increased quantum efficiency. Also a method of producing the heterostructure and a light emitting diode based on the heterostructure are provided. Light emitting diodes on the basis of the provided heterostructure emit in a mid-infrared spectral range of 1.8-2.4 μm. 1. A heterostructure based on a GaInAsSb solid solution , the hetero structure comprising:a substrate containing GaSb;a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate;an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer;a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer;a contact layer containing GaSb, the contact layer being disposed over the confining layer,wherein the buffer layer contains less indium (In) than the active layer.2. The heterostructure of claim 1 , wherein a mole fraction of indium (In) among the elements of the group III in the buffer layer is 1.2-1.6%.3. A method of producing a heterostructure based on a GaInAsSb solid solution claim 1 , according to which claim 1 , using a liquid epitaxy technique:a p-type conduction buffer layer is grown on an n-type conduction GaSb substrate, the buffer layer containing a GaInAsSb solid solution;an ...

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm. 17-. (canceled)8. A nitride semiconductor light emitting device comprising:a light emitting side;a light reflecting side;a first film of aluminum nitride or aluminum oxynitride on a first facet at the light emitting side;a second film of aluminum nitride or aluminum oxynitride on a second facet at the light reflecting side; andan oxide film having a thickness of at least 80 nm and at most 1000 nm on the first film,wherein the first film has an oxygen content of at most 20 atomic %, and a thickness of the first film is at least 12 nm and at most 200 nm.9. The nitride semiconductor light emitting device according to claim 8 , wherein the oxide film is an oxide of an element selected from the group consisting of aluminum claim 8 , silicon claim 8 , and titanium.10. The nitride semiconductor light emitting device according to claim 8 , wherein the thickness of the first film is at least 50 nm and at most 200 nm.11. The nitride semiconductor light emitting device according to claim 8 , wherein the thickness of the oxide film is at least 160 nm and at most 1000 nm.128. The nitride semiconductor light emitting device according to claim claim 8 , wherein the first film directly contacts nitride semiconductor layers forming the light emitting side claim 8 , and the second film directly contacts nitride semiconductor layers forming the light reflecting side. This application is a continuation under 35 U.S.C. §120 of U.S. application Ser. No. 12/805,644, filed Aug. 11, 2010, which is a continuation of U.S. application Ser. No. 11/713,760, filed Mar. 5, 2007, now U.S. Pat. No. 7,792,169, which ...

SEMICONDUCTOR LASER DEVICE

A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlGaN layer (0≦X<1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer. 1. A semiconductor laser device for generating blue-violet light with an emission wavelength of 400 nm to 410 nm , comprising:an n-type group III nitride semiconductor layer;an active layer laminated on the n-type group III nitride semiconductor layer and having an InGaN quantum well layer;a p-type group III nitride semiconductor layer laminated on the active layer; anda transparent electrode in contact with the p-type group III nitride semiconductor layer, the electrode serving as a clad, whereinthe p-type group III nitride semiconductor layer includes a p-type contact layer in contact with the transparent electrode,the n-type group III nitride semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the n-type clad layer and the active layer,{'sub': x', '1-x, 'the n-type guide layer includes a superlattice layer in which an InGaN layer and an AlGaN layer (0≦X<1) are laminated periodically, the superlattice layer having an average refractive index of 2.6 or lower,'}the In composition of the InGaN layer is lower than the In composition of the ...

SURFACE-EMITTING LASER ARRAY, LASER APPARATUS, IGNITION DEVICE AND INTERNAL COMBUSTION ENGINE

A surface-emitting laser array includes a plurality of light emitting parts. Each light emitting part includes a reflection mirror including aluminum gallium arsenide (AlGaAs) where x is greater than 0.95 but less than or equal to 1; an active layer; and an electrode surrounding an emission region, from which laser light is emitted, the electrode covering a region between adjacent light emitting parts in the plurality of light emitting parts. 1. A surface-emitting laser array comprising a plurality of light emitting parts , each including:{'sub': x', '(1-x), 'a reflection mirror including aluminum gallium arsenide (AlGaAs) where x is greater than 0.95 but less than or equal to 1;'}an active layer; andan electrode surrounding an emission region, from which laser light is emitted, the electrode covering a region between adjacent light emitting parts in the plurality of light emitting parts.2. The surface-emitting laser array according to claim 1 ,wherein a thickness of the electrode is greater than or equal to 2 μm.3. The surface-emitting laser array according to claim 1 ,wherein each of the plurality of light emitting parts has a structure of a shape of a mesa, andwherein a height of a top face of the electrode is greater than or equal to a height of the mesa.4. The surface-emitting laser array according to claim 1 ,wherein the reflection mirror includes aluminum arsenide (AlAs).5. The surface-emitting laser array according to claim 1 ,wherein an outermost layer of the region between the adjacent light emitting parts in the plurality of light emitting parts includes indium (In).6. The surface-emitting laser array according to claim 1 ,wherein the reflection mirror is a multi-layered reflection mirror and includes at least one AlAs layer having an optical thickness of (2m+1)λ/4 where an oscillation wavelength of the laser light is λ and m is a natural number.7. A laser device for irradiating an object with laser light comprising:{'claim-ref': {'@idref': 'CLM-00001', ' ...

METHOD OF PRODUCING A PLURALITY OF LASER DIODES AND LASER DIODE

A method of producing a plurality of laser diodes includes providing a plurality of laser bars in a compound, wherein the laser bars each include a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, and structuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed. 1. A method of producing a plurality of laser diodes comprising:providing a plurality of laser bars in a compound, wherein the laser bars each comprise a plurality of laser diode elements arranged side by side, the laser diode elements each have a common substrate and a semiconductor layer sequence arranged on the substrate, and a splitting of the compound at a longitudinal separation line running between two adjacent laser bars in each case leads to formation of laser facets of the laser diodes to be produced, andstructuring the compound at at least one longitudinal separation line, wherein a strained compensation layer is applied to the semiconductor layer sequence at least at the longitudinal separation line or the semiconductor layer sequence is at least partially removed.2. The method according to claim 1 , wherein the laser diode elements are each formed on a first main surface with a contact region and a connection layer claim 1 , and the contact region is applied on a side of the connection layer remote from the semiconductor layer sequence claim 1 , and at least the contact regions or connection layers of two laser diode elements directly adjacent at a longitudinal separation line are ...

Stable Linewidth Narrowing Of A Coherent Comb Laser

A technique for narrowing a linewidth of a plurality of lines of a coherent comb laser (CCL) concurrently comprises providing a mode-locked semiconductor coherent comb laser (CCL) adapted to output of at least 4 mode-locked lines; tapping a fraction of a power from the CCL from the laser cavity to form a tapped beam; propagating the tapped beam to an attenuator to produce an attenuated beam; and reinserting the attenuated beam into the laser cavity, where the reinserted beam has a power less than 10% of a power of the tapped beam. The reinsertion allows the CCL to be operated to output the mode-locked lines, each with a linewidth of less than 80% of the original linewidth. By propagating the tapped and attenuated beams on a solid waveguide, and ensuring that the secondary cavity is polarization maintaining, improved stability of the linewidth narrowing is ensured.

Method for Making a Semiconductor Laser Diode, and Laser Diode

A method for making a laser diode with a distributed grating reflector (RT) in a planar section of a semiconductor laser with stabilized wavelength includes providing a diode formed by a substrate (S), a first cladding layer (CL1) arranged on the substrate (S), an active layer (A) arranged on the first cladding layer (CL1) and adapted to emit a radiation, and a second cladding layer (CL2) arranged on the active layer (A), said cladding layers (CL1, CL2) being adapted to form a heterojunction to allow for efficient injection of current into the active layer (A) and optical confinement, and a contact layer. The manufacturing method provides for creating, on a first portion (ZA) of the device, a waveguide (GO) for confinement of the optical radiation and, on the remaining portion (ZP) of the device, two different gratings for light reflection and confinement. The two gratings define two different zones (R1, R2), wherein the first zone (R1) includes a grating of low order and high duty cycle, and is intended for reflection, and the second zone (R2) includes a grating of the same order, or a grating of a higher order than the previous one, and low duty cycle, and is mainly intended for light confinement. The waveguide (GO) for confining the optical radiation is implemented through a lithography and a subsequent etching, whereas the grating (RT) requires a high-resolution lithography and a shallow etching starting from a planar zone.

Laser Chip Design

A laser chip comprises a first lateral portion comprising a first metal stripe, a first lateral connector coupled to the first metal stripe, a second metal stripe, and a second lateral connector coupled to the second metal stripe; a second lateral portion coupled to the first lateral portion and comprising a first bonding pad coupled to the first lateral connector, and a second bonding pad coupled to the second lateral connector. A method of DFB laser chip fabrication, the method comprises depositing a first portion of a passivation layer; depositing a second metal stripe; depositing a second portion of the passivation layer; and depositing a first metal stripe. 1. A laser chip , comprising:a substrate including a top surface; a first lateral connector coupled to the first conductive trace at a first end and extending substantially laterally on the top surface from the first conductive trace; and', 'a first bonding pad formed on the top surface and on a second end of the first lateral connector, the first bonding pad located a first distance from the first conductive trace; and, 'a first conductive trace extending substantially longitudinally on the top surface of the substrate, the first conductive trace comprising a second lateral connector coupled to the second conductive trace at a first end and extending substantially laterally from the second conductive trace, the second lateral connector having a second end extending to the top surface of the substrate; and', 'a second bonding pad formed on a second end of the second lateral connector on the top surface of the substrate, the second bonding pad located the first distance from the first conductive trace;, 'a second conductive trace extending substantially longitudinally within the substrate, the second conductive trace being substantially parallel to the first conductive trace, and at least a portion of the second conductive trace is beneath the top surface, the second conductive trace comprisingthe first ...

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Provided is a high-output light-emitting device capable of emitting a light beam in a single mode. The light-emitting device includes a laminate structure body configured by laminating, in order, a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a base substrate, a second electrode, and a first electrode. The first compound semiconductor layer has a laminate structure including a first cladding layer and a first light guide layer in order from the base substrate, and the laminate structure body has a ridge stripe structure configured of the second compound semiconductor layer, the active layer, and a portion in a thickness direction of the first light guide layer. Provided that a thickness of the first light guide layer is t, and a thickness of the portion configuring the ridge stripe structure of the first light guide layer is t′, 6×10m Подробнее

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2X1, X3, andfilm thicknesses D1, D2, and D3 of the first layer, the second layer, and the third layer, respectively, satisfy a relation:D2 Подробнее

TUNABLE SEMICONDUCTOR BAND GAP REDUCTION BY STRAINED SIDEWALL PASSIVATION

A semiconductor device includes a mesa structure having vertical sidewalls, the mesa structure including an active area comprising a portion of its height. A stressed passivation liner is formed on the vertical sidewalls of the mesa structure and over the portion of the active area. The stressed passivation liner induces strain in the active area to permit tuning of performance parameters of the mesa structure. 1. A semiconductor device , comprising:a mesa structure having vertical sidewalls, the mesa structure including an active area comprising a portion of its height; anda stressed passivation liner formed on the vertical sidewalls of the mesa structure and over the portion of the active area, the stressed passivation liner inducing strain in the active area to permit tuning of performance parameters of the mesa structure.2. The semiconductor device as recited in claim 1 , wherein the liner includes a semiconductor material.3. The semiconductor device as recited in claim 2 , wherein the semiconductor material is pseudomorphically grown on the mesa structure.4. The semiconductor device as recited in claim 2 , wherein the liner includes a dielectric layer formed on the semiconductor material.5. The semiconductor device as recited in claim 1 , wherein the liner includes a dielectric material.6. The semiconductor device as recited in claim 1 , wherein the liner is configured to adjust one or more of emission wavelength claim 1 , band gap and/or performance of the mesa structure.7. The semiconductor device as recited in claim 1 , wherein the mesa structure includes one of a diode claim 1 , a laser or a transistor.8. A semiconductor device claim 1 , comprising:a mesa structure having vertical sidewalls, the mesa structure including at least a substrate, an active area formed over the substrate and a cap or contact layer formed on the active area, the active are comprising a portion of a height of the mesa structure; anda stressed passivation liner formed on the ...

SEMICONDUCTOR LASER HAVING IMPROVED INDEX GUIDING

A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section. 116.-. (canceled)17. A semiconductor laser comprising:a main body,a strip having a narrower width provided on the main body, andan active zone that generates light radiation,wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.18. The semiconductor laser as claimed in claim 17 , wherein the active zone is arranged at least partly or completely in the strip or in the main body.19. The semiconductor laser as claimed in claim 17 , wherein the cavity is formed from a porous and/or fissured material.20. The semiconductor laser as claimed in claim 17 , wherein the cavity is arranged in a manner adjoining a corner region between a top side of the main body and a side surface of the strip.21. The semiconductor laser as claimed in claim 17 , wherein the cavity extends over an entire side length of the strip.22. The semiconductor laser as claimed in claim 17 , wherein the cavity extends over an entire height of the side surface of the strip claim 17 , the protective layer is at a lateral distance from the side surface of the strip claim 17 , and a gap between the protective layer and the strip is covered by the electrical contact.23. The semiconductor laser as ...

METHOD FOR STRUCTURING A NITRIDE LAYER, STRUCTURED DIELECTRIC LAYER, OPTOELECTRONIC COMPONENT, ETCHING METHOD FOR ETCHING LAYERS, AND AN ENVIRONMENT SENSOR

The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer () regions () remain at least 80% untransformed. 1. Method for patterning a nitride layer having the following steps:A) providing the nitride layer, which is formed with a silicon nitride of a first type,B) defining regions to be transformed of the nitride layer,C) introducing the nitride layer into a transformation chamber for the duration of a transformation period, wherein the transformation period is selected such that at least 80% of the regions to be transformed of the nitride layer are transformed into oxide regions, which are formed with a silicon oxide.2. Method according to claim 1 ,wherein remaining regions of the nitride layer remain at least 60%, preferably at least 80% untransformed.3. Method according to claim 1 ,wherein the process conditions for transformation in the transformation chamber during method step C) are selected as follows:temperature of at least 80° C. and at most 200° C.,pressure of at least 1 bar and at most 15 bar, and/orrelative humidity of at least 80% and at most 99%.4. Method according to claim 1 ,wherein in step A) the nitride layer is applied to a carrier in a deposition chamber by plasma-enhanced chemical vapor deposition (PECVD), wherein at least one of the deposition conditions in the deposition chamber is selected as follows:{'sub': 4', '2, 'SiHflow rate of at least 4.5% and at most 5.5% of the nitrogen (N) flow rate,'}{'sub': 3', '2, 'NHflow rate of at least 14. ...

Tunable laser source, optical transmitter, and optical transmitter and receiver module

A tunable laser source includes a mirror, a tunable filter, and a semiconductor optical amplifier integrated device including first, second, and third semiconductor optical amplifiers between a first end face facing toward the tunable filter and a second end face facing away from the first end face. The first amplifier is closer to the first end face than the second and third amplifiers. The semiconductor optical amplifier integrated device further includes a partially reflecting mirror and an optical divider that are disposed between the first amplifier and the second and third amplifiers. The partially reflecting mirror is closer to the first amplifier than the optical divider. The optical divider includes first and second branches connected to the second and third semiconductor optical amplifiers, respectively. The tunable filter and the first amplifier are disposed in an optical path between the partially reflecting mirror and the mirror that form a laser resonator.

LASER DIODE AND METHOD FOR MAKING THE SAME

A laser diode includes a light-emitting stack, and a distributed Bragg reflection (DBR) cover layer in contact with the light-emitting stack. The light-emitting stack includes an N-type layer, an active layer, and a P-type layer that has a ridged member. The ridged member has an end face including a first inclined surface that inclines with respect to a top surface of the ridged member in an outward and downward direction from the top surface. A contact interface between the ridged member and the DBR cover layer includes the first inclined surface. A method for making the laser diode is also disclosed. 1. A laser diode , comprising:a light-emitting stack, said light-emitting stack including an N-type layer, an active layer, and a P-type layer that has a ridged member; anda distributed Bragg reflection (DBR) cover layer in contact with said light-emitting stack,whereinsaid ridged member has an end face including a first inclined surface that inclines with respect to a top surface of said ridged member in an outward and downward direction from said top surface, anda contact interface between said ridged member and said DBR cover layer includes said first inclined surface.2. The laser diode as claimed in claim 1 , wherein an angle between said first inclined surface and a normal to a bottom surface of said ridged member ranges between 0° and 60°.3. The laser diode as claimed in claim 1 , further comprising a substrate under said light-emitting stack claim 1 , said substrate having an end face including a second inclined surface that inclines with respect to a bottom surface of said substrate in an outward and upward direction from said bottom surface claim 1 , a contact interface between said substrate and said DBR cover layer including said second inclined surface.4. The laser diode as claimed in claim 3 , wherein said second inclined surface has an angle with a normal to a top surface of said substrate that ranges between 0° and 60°.5. The laser diode as claimed in ...

METHODS OF PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS, AND OPTOELECTRONIC SEMICONDUCTOR LASERS

An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 μm to 100 μm. 2. The optoelectronic semiconductor laser according to claim 1 , wherein the light blocking layer is a metallic layer or a metallic layer stack claim 1 , the light blocking layer having a thickness of 10 nm to 2 μm.3. The optoelectronic semiconductor laser according to claim 2 , wherein the light blocking layer is the metallic layer stack and consists of Ti and/or Cr claim 2 , the light blocking layer having a thickness of at least 50 nm.4. The optoelectronic semiconductor laser according to claim 2 , wherein an electrically insulating layer is situated at a side of the light blocking layer facing the semiconductor layer sequence as well as at a side of the light blocking layer facing away from the semiconductor layer sequence.5. The optoelectronic semiconductor laser according to claim 2 , wherein an antireflection layer is applied continuously and over a whole area of the front facet claim 2 , and the light blocking layer is situated at a side of the antireflection layer facing away from the growth substrate and the semiconductor layer sequence.6. The optoelectronic semiconductor laser according to claim 2 , wherein an antireflection layer for the laser radiation ...

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE

A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer. 1. A light emitting device comprising:a first n-type semiconductor layer formed on a substrate;a tunnel junction layer disposed on a part of the first n-type semiconductor layer;a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer;an active layer disposed on the p-type semiconductor layer; anda second n-type semiconductor layer disposed on the active layer.2. The light emitting device according to claim 1 ,wherein in a plane parallel to the substrate including the tunnel junction layer,a refractive index of the p-type semiconductor layer is smaller than a refractive index of the tunnel junction layer.3. The light emitting device according to claim 1 ,wherein a distance between the tunnel junction layer and the active layer is 120 nm or shorter.4. The light emitting device according to claim 1 , a first layer contacting the tunnel junction layer and having a first refractive index, and', 'a second layer disposed on the first layer and having a second refractive index lower than the first refractive index, and, 'wherein the p-type semiconductor layer includesan effective refractive index of the p-type semiconductor layer is higher in a first area overlapping the tunnel junction layer in a plan view than in a second area separated from the tunnel junction layer in a plan view.5. The light emitting device according to claim 1 ,wherein above the tunnel junction layer, the active layer and the second n-type semiconductor layer are located next to each other in a plane parallel to the ...

SEMICONDUCTOR OPTICAL DEVICE

A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer. 1. A semiconductor optical device comprising:a semiconductor substrate;a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer;an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction;a passivation film that covers at least a part of the adjacent layer;a resin layer on the passivation film;an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; andan inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.2. The semiconductor optical device according to claim 1 , whereina plurality of layers are laminated on the semiconductor substrate,the plurality of layers include a pair of grooves extending in the first direction,the mesa stripe structure is between the pair of grooves and is composed of ...

SEMICONDUCTOR OPTICAL DEVICE AND DISPLAY DEVICE

A semiconductor optical device includes: a ridge stripe structure portion in which a first compound semiconductor layer , an active layer , and a second compound semiconductor layer are stacked and which has a first end surface which emits light and a second end surface opposite to the first end surface ; and a current regulation region provided to be adjacent to at least one of ridge stripe adjacent portions positioned at both sides of the ridge stripe structure portion , at the second end surface side, and to be away from the ridge stripe structure portion . A bottom surface of the current regulation region is under the active layer , and a top surface of the ridge stripe adjacent portion excluding the current regulation region is above the active layer 1. A semiconductor optical device comprising:a ridge stripe structure portion in which a first compound semiconductor layer, an active layer made of a compound semiconductor, and a second compound semiconductor layer are stacked and which has a first end surface which emits light and a second end surface opposite to the first end surface; anda current regulation region provided to be adjacent to at least one of ridge stripe adjacent portions positioned at both sides of the ridge stripe structure portion, at the second end surface side, and to be away from the ridge stripe structure portion,{'sub': 1', '2', '1', '3', '2, 'claim-text': [{'br': None, 'i': H', '≦T, 'sub': 1', '1, ', and'}, {'br': None, 'i': T', '+T', '≦H', '≦T', '+T', '+T, 'sub': 1', '3', '2', '1', '3', '2, '.'}], 'wherein, when a distance from a bottom surface of the first compound semiconductor layer to a bottom surface of the current regulation region is H, a distance from the bottom surface of the first compound semiconductor layer to a top surface of the ridge stripe adjacent portion excluding the current regulation region is H, a thickness of the first compound semiconductor layer is T, a thickness of the active layer is T, and a thickness of the ...

LUMINESCENT DIODE, METHOD FOR MANUFACTURING THE LUMINESCENT DIODE AND WAVELENGTH TUNABLE EXTERNAL CAVITY LASER USING THE LUMINESCENT DIODE

In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics. 1. A method for manufacturing a luminescent diode having an active region and a tapered region , the method comprising:forming an epitaxial layer by sequentially stacking, on a substrate, an n-type passive waveguide, an n-type clad layer, an active layer, and a p-type cap layer;etching a portion of the active layer disposed in the active region within the epitaxial layer, and forming a tapered active layer having a tapered shape along the length direction of the active layer disposed in the tapered region, the tapered active layer extending from the active layer;forming a planar buried heterostructure (PBH) by forming a pnp current blocking layer burying a tapered layer in the tapered region; andforming a ridge waveguide on the active layer in the active region and the tapered region.2. The method of claim 1 , wherein the forming of the tapered active layer includes forming the width of the tapered layer to become narrower as it becomes more distant from the active region.3. The method of claim 1 , wherein the forming of the tapered active layer includes etching the n-type passive waveguide in a region except the active region.4. The method of claim 1 , wherein the forming of the PBH includes:forming a passive waveguide core by etching the n-type passive waveguide under the tapered layer in the tapered region, wherein the passive waveguide core covers the width of the tapered layer and overlaps with the tapered layer; andforming the pnp current blocking layer burying the ...

INTEGRATED QUANTUM CASCADE LASER, SEMICONDUCTOR OPTICAL APPARATUS

An integrated quantum cascade laser includes: a laser structure including first to third regions arranged in a direction of a first axis, the laser structure including a substrate and a laminate including a core layer; first and second metal layers disposed on the third region; the third and fourth metal layers disposed on the first region; first to fourth bump electrodes disposed on the first to fourth metal layers, respectively; first and second semiconductor mesas provided in the first region, each of the first and second semiconductor mesas including the core layer; and a distribute Bragg reflector provided in the second region, the distribute Bragg reflector having one or more semiconductor walls. The first and second metal layers are electrically connected to the first and second semiconductor mesas, respectively. The third and fourth metal layers are separated apart from the first and second metal layers. 1. An integrated quantum cascade laser comprising:a laser structure including a first region, a second region and a third region which are arranged in a direction of a first axis, the laser structure including a substrate and a laminate which are arranged in a direction of a second axis intersecting the direction of the first axis, the laminate including a core layer having a quantum well structure;a plurality of metal layers including a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer, the first and second metal layers being disposed on the third region, the third and fourth metal layers being disposed on the first region;a plurality of bump electrodes including a first bump electrode disposed on the first metal layer, a second bump electrode disposed on the second metal layer, a third bump electrode disposed on the third metal layer, and a fourth bump electrode disposed on the fourth metal layer;a plurality of semiconductor mesas including a first semiconductor mesa and a second semiconductor mesa that are provided in ...

Optical amplifier and optical switch device

An optical amplifier includes a polarization splitter, a polarization rotator, first and second optical couplers, and first and second semiconductor optical amplifying devices. The TE polarized wave of light split by the polarization splitter is input to a first input port of the first optical coupler. The TM polarized wave of the split light is converted into a TE polarized wave by the polarization rotator to be input to a second input port of the first optical coupler. First light and second light output from a first output port and a second output port of the first optical coupler are amplified by the first semiconductor optical amplifying device and the second semiconductor optical amplifying device to be input to a first input port and a second input port of the second optical coupler, respectively. Third light is output from an output port of the second optical coupler.

LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT-EMITTING ELEMENT

A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first semiconductor layer disposed at the first end portion, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first barrier layer disposed between the active layer and the first semiconductor layer and including a first region and a second region, and an insulating film that surrounds an outer circumferential surface of each of the first semiconductor layer, the active layer, the first barrier layer, and the second semiconductor layer. The first region includes a semiconductor layer having an aluminum composition higher than an aluminum composition of the first semiconductor layer, the active layer, and the second semiconductor layer. The second region includes an oxide layer. 1. A light-emitting element comprising:a first end portion and a second end portion disposed in a length direction of the light-emitting element;a first semiconductor layer disposed at the first end portion;an active layer disposed on the first semiconductor layer;a second semiconductor layer disposed on the active layer;a first barrier layer disposed between the active layer and the first semiconductor layer, the first barrier layer including a first region and a second region; andan insulating film that surrounds an outer circumferential surface of each of the first semiconductor layer, the active layer, the first barrier layer, and the second semiconductor layer, whereinthe first region of the first barrier layer includes a semiconductor layer having an aluminum composition higher than an aluminum composition of the first semiconductor layer, the active layer, and the second semiconductor layer, andthe second region of the first barrier layer includes an oxide layer.2. The light-emitting element of claim 1 , whereinthe first semiconductor layer includes an n-type semiconductor ...

MULTI-BEAM SEMICONDUCTOR LASER DEVICE

Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. The support electrode portion is electrically connected to one of the pair of neighboring light emitting ridge portions. The support electrode portion is higher than the one light emitting ridge portion. An end of the front ridge portion on the front end surface side is higher than the one light emitting ridge portion at the front end surface. 1. A multi-beam semiconductor laser device , comprising:a first semiconductor multilayer in which a plurality of semiconductor layers comprising an active layer are laminated on a substrate;a plurality of light emitting ridge portions that are formed to extend along a light emitting direction from a front end surface to a rear end surface, and to be aligned in order on an upper surface of the first semiconductor multilayer along a direction orthogonal to the light emitting direction;a support electrode portion formed on the upper surface of the first semiconductor multilayer through intermediation of an insulating film in a region inside the front end surface and the rear end surface between a pair of neighboring ones of the plurality of light emitting ridge portions; anda front ridge portion formed on the upper surface of the first semiconductor multilayer on the front end surface side of the support electrode portion between the pair of neighboring ones of the plurality of light emitting ridge portions,wherein the support electrode portion is ...

Semiconductor laser element

A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.

INTEGRATED LIGHT SOURCE USING A LASER DIODE

The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source. 1. A packaged integrated white light source using a beam of light , comprising:a package member configured with a base member;a laser diode device comprising a gallium and nitrogen containing material and configured as an excitation source, the laser diode device comprising a p-electrode and an n-electrode;a phosphor wavelength converter member configured as an emitter and coupled to the laser diode device;at least one common support member configured to support the laser diode device and the phosphor member,a heat sink thermally coupled to the common support member, the common support member configured to transport thermal energy from the laser diode device and phosphor member on the common support member to the heat sink;a first electrical connection configured from the p-electrode of the laser diode device to a first internal feedthrough on the package member; anda second electrical connection configured from the n-electrode of the laser diode device to a second internal feedthrough on the package member;a submount member configured with the laser diode device to form a chip on submount structure;an output facet configured on the laser diode device to output a beam of electromagnetic radiation from the output facet; the beam of electromagnetic radiation being selected from a violet and/or a blue emission with a first wavelength ranging from 400 nm to 485 nm, the output beam being characterized by a wavelength range, a spectral width, a ...

SEMICONDUCTOR LASER DIODE WITH SHORTENED CAVITY LENGTH

A semiconductor laser diode (LD) with a shortened cavity length is disclosed. The LD provides a rectangular substrate and, on the substrate, a cavity structure including a mesa with facets forming the laser cavity. The facets of the mesa are stood back from the side of the substrate. Pads to provide electrical signals are arranged in both sides of the mesa close to the sides of the substrate. 1. A semiconductor laser diode (LD) providing an optical axis along which laser light is emitted , comprising:a rectangular semiconductor substrate; anda mesa including an active layer to generate the laser light, the mesa extending along the optical axis and having two facets in respective ends thereof to define a cavity for the laser light,wherein the facets of the mesa are stood back from respective edges of the substrate each perpendicular to the optical axis.2. The LD of claim 1 ,further providing a depression having a bottom exposing the substrate therein and an end surface common to one of the facets of the mesa.3. The LD of claim 2 ,wherein the substrate provides other two edges extending in parallel to each other along the optical axis, the depression extending from one of the other two edges to the other of the other two edges.4. The LD of claim 2 ,further providing another depression having a bottom exposing the substrate therein and an end surface common to another of the facets of the mesa.5. The LD of claim 4 ,wherein the substrate provides other two edges extending in parallel to each other along the optical axis, the depression extending from one of the other two edges to the other of the other two edges.6. The LD of claim 5 ,wherein the depression continues to the another depression in respective sides of the mesa, the mesa being isolated within the depression and the another depression.7. The LD of claim 2 ,wherein the depression has a longitudinal length from the edge, from which the depression extends inward, to the end surface, andwherein the longitudinal ...

COMPACT LASER DEVICE

The invention describes a laser device comprising between two and six mesas () provided on one semiconductor chip (), wherein the mesas () are electrically connected in parallel such that the mesas () are adapted to emit laser light if a defined threshold voltage is provided to the mesas (). Two to six mesas () with reduced active diameter in comparison to a laser device with one mesa improve the yield and performance despite of the fact that two to six mesas need more area on the semiconductor chip thus increasing the total size of the semiconductor chip (). The invention further describes a method of marking semiconductor chips (). A functional layer of the semiconductor chip () is provided and structured in a way that a single semiconductor chip () can be uniquely identified by means of optical detection of the structured functional layer. The structured layer enables identification of small semiconductor chips () with a size below 200 μm×200 μm. 1. A device , comprising:between two and four mesas provided on one semiconductor chip and electrically connected in parallel with each; anda driver configured to electrically drive the mesas,wherein the driver is configured to provide a defined threshold voltage to the between two to four mesas, and the between two to four mesas are configured so that in response to receiving the defined threshold voltage they emit laser light at the same time as each other, andwherein the laser device is adapted to emit laser light with an optical power, wherein the optical power linearly depends on the provided electrical current when driven at an electrical current between 3 mA and 12 mA.2. The device according to claim 1 , comprising three mesas.3. The device according to claim 1 , wherein the laser device is adapted to emit laser light of an optical power between 4 mW and 10 mW.4. The device according to claim 3 , wherein the laser device is adapted to be driven at a voltage between 1.6 V and 2.2 V at an electrical current of 12 mA ...

Semiconductor Laser Diode

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width. 1. A semiconductor laser diode comprising:a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction,wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions,wherein the ridge comprises a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region,wherein the ridge has a first width in the first region, andwherein the ridge has a second width in the second region, the second width being larger than the first width.2. The semiconductor laser diode according to claim 1 , wherein a transition from the first to the second region is stepped.3. The semiconductor laser diode according to claim 1 , wherein the second ...

Laser bars having trenches

A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.

SEMICONDUCTOR LASER AND PROJECTOR

In an embodiment, the semiconductor laser () comprises a semiconductor layer sequence () in which an active zone () for generating laser radiation (L) is located. Several electrical contact surfaces () serve for external electrical contacting of the semiconductor layer sequence (). Several parallel ridge waveguides () are formed from the semiconductor layer sequence () and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench () between adjacent ridge waveguides. At least one electrical feed () serves from at least one of the electrical contact surfaces () to guide the current to at least one of the ridge waveguides (). A distance (A) between the ridge waveguides is at most 50 μm. The ridge waveguides () are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation. 2. The semiconductor laser according to claim 1 , further comprising a carrier on which the semiconductor layer sequence is attached by means of at least one organic or metallic connection means claim 1 ,wherein the semiconductor layer sequence is designed as a semiconductor chip and at least two of the contact surfaces are located on the carrier.3. The semiconductor laser according to claim 2 ,in which the carrier comprises a plurality of electrical conductor tracks which electrically connect the contact surfaces on the carrier to the feeds via the connecting means, wherein at least one contact surface is provided on the carrier for each of the ridge waveguides.4. The semiconductor laser according to claim 1 ,in which there is a flow stop layer between the contact surfaces of the carrier, wherein the flow stop layer is configured to prevent direct electrical connections between adjacent contact surfaces of the carrier.5. The semiconductor laser according to claim 2 ,in which the connecting means is a solder or a continuously applied anisotropic electrically conductive adhesive.6. The ...

SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING HOLE INJECTION LAYER

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type. 1. A semiconductor light emitting device comprising:a first semiconductor layer, the first semiconductor layer being doped a first conductive type and including dislocations therein;a pit enlarging layer on the first semiconductor layer;an active layer on the pit enlarging layer, an upper surface of the pit enlarging layer and side surfaces of the active layer defining pits having sloped surfaces on the dislocations, the pits being reverse pyramidal spaces;a hole injection layer on a top surface of the active layer and the sloped surfaces of the pits; anda second semiconductor layer on the hole injection layer, the second semiconductor layer being is doped a second conductive type that is different than the first conductive type.2. The semiconductor light emitting device of claim 1 , whereinthe active layer has a multiple quantum well (MQW) structure including a plurality of barrier layers and a plurality of quantum well layer that are alternately stacked on each other.3. The semiconductor light emitting device of claim 2 , wherein the hole injection layer contacts all of the plurality of quantum well layers of the active layer along the sloped surfaces of the pits.4. The semiconductor light emitting device of claim 1 , wherein a ...

Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body

An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.

Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening. 1. A semiconductor structure comprising:a substrate comprising a first crystalline semiconductor material having a top surface with a first crystal orientation, the substrate including a recess from the top surface into the substrate with a maximum depth d, the recess comprising a recessed surface with a second crystal orientation;a dielectric sidewall of height h disposed on the top surface of the substrate and proximate the recess; anda second crystalline semiconductor material of a maximum width w disposed in the recess, the recess defining an interface between the second crystalline semiconductor material and the substrate,wherein the second crystalline semiconductor material has a lattice mismatch with the first crystalline semiconductor material, the lattice mismatch causes defects in the second crystalline semiconductor material, and the defects terminate at a distance H above a bottom surface of the recess.2. The semiconductor structure of claim 1 , wherein His less than h+d.3. The semiconductor structure of claim 2 , wherein His less than d.4. The semiconductor structure of claim 1 , wherein His less than or equal tow.5. The semiconductor structure of claim 1 , wherein a ratio of h+d to w is greater than or equal to one.6. The semiconductor structure of claim 1 , wherein the recess has a v-shaped profile.7. The semiconductor structure of claim 1 , wherein the first crystal orientation is (100) claim 1 , and the second crystal orientation is not (100).8. The semiconductor structure of claim 7 , wherein the second crystal orientation is (111).9. The semiconductor structure of claim 1 , further comprising a third crystalline semiconductor material disposed above the second crystalline semiconductor material.10. The ...