10-02-2022 дата публикации
Номер: US20220044908A1
Принадлежит:
Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF, NF, F, SiF, WF, PF, PF, AsF, AsF, CFand other fluorinated hydrocarbons of CF(x≥1, y≥1) general formula, SF, HF, COF, OF, BF, BF, GeF, XeF, O, NO, NO, NO, NO, and O, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H, NH, NH, BH, AsH, PH, SiH, SiH, HS, HSe, CHand other hydrocarbons of CH(x≥1, y≥1) general formula and GeH. 1. A nitrogen ion implantation composition comprising:{'sub': '2', 'a dopant gas comprising N; and'}{'sub': 3', '2', '4', '2', '2', '2', '4, 'a glitching-suppressing gas comprising at least one of NF, NF, NO, NO, NO, NO, or any combination thereof;'}wherein the dopant gas and the glitching-suppressing gas are present in an amount sufficient to reduce formation of nitrides on a surface of a nitrogen ion implantation system, as compared to a composition that does not comprise the glitching-suppressing gas.2. The nitrogen ion implantation composition of claim 1 , wherein the dopant gas is present in amount of 50% or greater by volume based on a total volume of the nitrogen ion implantation composition.3. The nitrogen ion implantation composition of claim 1 , wherein the glitching-suppressing gas is present in an amount of 1% to 49% by volume based on a total volume of the nitrogen ion implantation ...
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