Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same
Номер патента: EP4367711A1
Опубликовано: 15-05-2024
Автор(ы): Darren Hansen, Douglas Dukes, Juan Carlos Rojo, Mark Land, Mark Loboda, Victor Torres
Принадлежит: Pallidus Inc
Опубликовано: 15-05-2024
Автор(ы): Darren Hansen, Douglas Dukes, Juan Carlos Rojo, Mark Land, Mark Loboda, Victor Torres
Принадлежит: Pallidus Inc
Реферат: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.
Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same
Номер патента: EP4367710A1. Автор: Juan Carlos Rojo,Mark Land,Victor Torres,Mark Loboda,Douglas Dukes,Darren Hansen. Владелец: Pallidus Inc. Дата публикации: 2024-05-15.