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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 16874. Отображено 100.
09-02-2012 дата публикации

Diamond semiconductor element and process for producing the same

Номер: US20120034737A1
Автор: Kenji Ueda, Makoto Kasu, Toshiki Makimoto, Yoshiharu Yamauchi
Принадлежит: Nippon Telegraph and Telephone Corp

A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

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Номер записи: 1
16-02-2012 дата публикации

Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies

Номер: US20120040518A1
Автор: Boil Pashmakov, David Strand, Patrick Klersy, Stanford R. Ovshinsky
Принадлежит: Boil Pashmakov, David Strand, Ovshinsky Stanford R, Patrick Klersy

Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

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Номер записи: 2
16-02-2012 дата публикации

Method for forming silicon film having microcrystal structure

Номер: US20120040519A1
Автор: Ching-ting Lee
Принадлежит: Bureau of Energy Ministry of Economic Affairs

A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.

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Номер записи: 3
23-02-2012 дата публикации

Plasma processing apparatus, deposition method, method of manufacturing metal plate having dlc film, method of manufacturing separator, and method of manufacturing article

Номер: US20120045591A1
Автор: Ge Xu
Принадлежит: Canon Anelva Corp

A plasma processing apparatus includes a holder holding an object to be processed in a vacuum chamber while being electrically connected to the object, a first take-up portion configured to take up an electrically conductive sheet and set at a potential different from that of the object at the time of plasma processing, and a second take-up portion configured to take up the electrically conductive sheet which is fed from the first take-up portion and passes through a position facing a processing surface of the object held by the holder.

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Номер записи: 4
26-04-2012 дата публикации

Photo-patterned carbon electronics

Номер: US20120098101A1
Автор: Daniel N. Carothers, Rick Thompson
Принадлежит: BAE Systems Information and Electronic Systems Integration Inc

A system is provided for the manufacture of carbon based electrical components including, an ultraviolet light source; a substrate receiving unit whereby a substrate bearing a first layer of carbon based semiconductor is received and disposed beneath the ultraviolet light source; a mask disposed between the ultraviolet light source and the carbon based semiconductor layer; a doping agent precursor source; and environmental chemical controls, configured such that light from the ultraviolet light source irradiates a doping agent precursor and the first carbon layer.

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Номер записи: 5
03-05-2012 дата публикации

Thin-film manufacturing method and apparatus

Номер: US20120107524A1
Автор: Katsumi Taniguchi, Kungen TEII, Tomonori Katano
Принадлежит: Fuji Electric Co Ltd, Kyushu University NUC

A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

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Номер записи: 6
17-05-2012 дата публикации

Method for producing diamond-like carbon film body

Номер: US20120121817A1
Автор: Takao Saito, Tatsuya Terazawa
Принадлежит: NGK Insulators Ltd

Provided is a method of manufacturing a DLC film formed body in which peeling-off of a DLC film is suppressed. In manufacturing a DLC film formed body having a film hardness of 10 GPa or more, prior to the formation of the DLC film, a surface of a base is pretreated with a discharge plasma and a silicon carbide film being an interlayer is formed on the surface of the base. The surface of the base is pretreated by supplying an inside of the chamber with a gas mixture obtained by mixing 1 part by volume or more and 10 parts by volume or less of argon gas into 100 parts by volume of helium gas while adjusting a pressure inside of the chamber in which the base is housed to 20 hPa or higher and an atmospheric pressure or lower, and generating a discharge plasma in the mixed.

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Номер записи: 7
31-05-2012 дата публикации

Coating device and coating method

Номер: US20120135144A1
Автор: Artur Laukart, Lothar Schäfer, Markus Armgardt, Markus Hofer, Tino Harig
Принадлежит: Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV

A coating installation includes at least one recipient which can be evacuated and which is provided to receive a substrate, at least one gas supply device which can introduce at least one gaseous precursor into the recipient, and at least one activation device which contains at least one heatable activation element, the end thereof being secured to a securing point on a support element. A shielding element which can protect at least the securing point at least partially against the effect of the gaseous precursor is provided. The shielding element has a longitudinal extension having a first side and a second side, the first side being arranged on the support element and a locking element being arranged on the second side of the shielding element, the locking element having at least one outlet. At least one separation wall is arranged inside the shielding element, the wall separating the inner volume of the shielding element into a first partial volume and into a second partial volume.

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Номер записи: 8
02-08-2012 дата публикации

Semiconductor device and method for manufacturing same

Номер: US20120193633A1
Автор: Akihiko Kohno, Kohichi Tanaka, Toshio Mizuki
Принадлежит: Sharp Corp

A method for fabricating a semiconductor device according to the present invention includes the steps of: (a) providing a substrate ( 11 a ) in a chamber ( 26 ); (b) supplying a microwave into the chamber ( 26 ) through a dielectric plate ( 24 ), of which one surface that faces the chamber is made of alumina, thereby depositing a microcrystalline silicon film ( 14 ) with an aluminum concentration of 1.0×10 16 atoms/cm 3 or less on the substrate ( 11 a ) by high-density plasma CVD process; and (c) making a thin-film transistor that uses the microcrystalline silicon film as its active layer. As a result, a semiconductor device including a TFT that uses a microcrystalline silicon film with a mobility of more than 0.5 cm 2 /Vs as its active layer is obtained.

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Номер записи: 9
20-09-2012 дата публикации

Graphene synthesis chamber and method of synthesizing graphene by using the same

Номер: US20120234240A1
Автор: Dong-kwan Won, Won-Sik Nam
Принадлежит: NPS CORP, Samsung Techwin Co Ltd

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

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Номер записи: 10
27-09-2012 дата публикации

Manufacturing Apparatus and Method for Semiconductor Device

Номер: US20120244685A1
Автор: Kunihiko Suzuki, Shinichi Mitani
Принадлежит: Nuflare Technology Inc

A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied.

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Номер записи: 11
13-12-2012 дата публикации

Crystalline silicon film forming method and plasma cvd apparatus

Номер: US20120315745A1
Автор: Daisuke Katayama, Masayuki Kohno, Minoru Honda, Toshio Nakanishi
Принадлежит: Tokyo Electron Ltd

A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si n H 2n+2 (n is equal to or larger than 2) by the microwave; and depositing a crystalline silicon film on the surface of the processing target substrate by performing the plasma CVD process with the plasma.

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Номер записи: 12
03-01-2013 дата публикации

Method and apparatus for forming silicon film

Номер: US20130005142A1
Автор: Akinobu Kakimoto, Kazuhide Hasebe, Satoshi Takagi
Принадлежит: Tokyo Electron Ltd

Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.

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Номер записи: 13
24-01-2013 дата публикации

Stable graphene film and preparing method of the same

Номер: US20130022811A1
Автор: Byung Hee Hong, Chao Yan, Jong-Hyun Ahn
Принадлежит: Sungkyunkwan University Research and Business Foundation

The present disclosure relates to a stable graphene film, a preparing method of the stable graphene film, a graphene transparent electrode including the stable graphene film, and a touch screen including the stable graphene film.

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Номер записи: 14
24-01-2013 дата публикации

Method for preparing graphene nanoribbon on insulating substrate

Номер: US20130022813A1
Автор: Chen Wang, Guqiao Ding, Ji Chen, Mianheng Jiang, Shujie Tang, Xiaoming Xie
Принадлежит: Shanghai Institute of Microsystem and Information Technology of CAS

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

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Номер записи: 15
14-02-2013 дата публикации

Plasma Booster for Plasma Treatment Installation

Номер: US20130040072A1
Автор: Hubert Eberle, Orlaw Massler, Patrick Gschwend
Принадлежит: Oerlikon Trading AG Truebbach

Vacuum treatment installation particularly for plasma coating workpieces has an arrangement for boosting and/or igniting a glow discharge plasma for the treatment of workpieces, and at least one hollow body of electrically conductive material, the hollow body including a hollow space and at least one entrance opening through which charge carriers flow in order to make possible ignition and operation of a plasma or to boost an existing plasma.

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Номер записи: 16
21-02-2013 дата публикации

Sliding element, in particular piston ring, and combination of a sliding element with a mating running element

Номер: US20130042845A1
Автор: Marcus Kennedy, Michael Zinnabold
Принадлежит: Individual

The invention relates to a sliding element, in particular a piston ring, preferably made of cast iron or steel, comprising a coating having a CrN, an Me(C x N y ), and a DLC layer extending from the inside to the outside, wherein the DLC layer is either metal-free or consists of a metal-containing substructure and a metal-free DLC top layer. The invention further relates to a combination of such a sliding element with an iron-based mating miming element.

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Номер записи: 17
21-02-2013 дата публикации

Metal powder, method for preparing the same, and multilayered ceramic capacitor including inner electrode made of metal powder

Номер: US20130045385A1
Автор: Hyun Ho Lim, Kyu Sang Lee, Sung Kwon Wi, Woon Chun Kim
Принадлежит: Samsung Electro Mechanics Co Ltd

A metal powder including a graphene layer irregularly formed on a surface of the metal powder, a method for preparing the same, and a multilayered ceramic capacitor including an inner electrode using the metal powder. By using the metal powder having the graphene irregularly formed on the surface thereof as the inner electrode material of the multilayered ceramic capacitor, and allowing the necking phenomenon to occur on only the surface where the graphene is not formed, the necking of the metal powder is delayed and the shrinkage of the inner electrode is controlled, so that reduction of the thickness of the inner electrode and disconnection/crack can be prevented.

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Номер записи: 18
21-03-2013 дата публикации

ELECTROMAGNETIC SHIELDING METHOD USING GRAPHENE AND ELECTROMAGNETIC SHIEDLING MATERIAL

Номер: US20130068521A1
Автор: BAE Sukang, Choi Jea-Boong, HONG Byung Hee, KANG Junmo, KIM Hyeongkeun, KIM Young Jin
Принадлежит: Sungkyunkwan University Foundation For Corporate Collaboration

The present application relates to a method for shielding electromagnetic waves by using graphene inside or outside an electromagnetic wave generating source and/or by using graphene formed on a substrate, and an electromagnetic shielding material including the graphene. 1. A method for shielding electromagnetic waves by using graphene , the method comprising forming graphene outside or inside an electromagnetic wave generating source to shield electromagnetic waves by the graphene.2. The method for shielding electromagnetic waves by using graphene of claim 1 ,wherein the graphene is formed outside or inside the electromagnetic wave generating source through a chemical vapor deposition method.3. The method for shielding electromagnetic waves by using graphene of claim 1 ,wherein the graphene is formed by transferring the graphene formed on a substrate through a chemical vapor deposition method to the outside or the inside of the electromagnetic wave generating source.4. The method for shielding electromagnetic waves by using graphene of claim 1 ,wherein the graphene is doped.5. The method for shielding electromagnetic waves by using graphene of claim 1 ,wherein sheet resistance of the graphene is 60 Ω/sq or less.6. The method for shielding electromagnetic waves by using graphene of claim 3 ,wherein the substrate includes metal or polymer.7. A method for shielding electromagnetic waves by using graphene claim 3 , the method comprising attaching or wrapping a substrate claim 3 , on which graphene is formed claim 3 , to or around the outside or the inside of an electromagnetic wave generating source to shield electromagnetic waves by the graphene.8. The method for shielding electromagnetic waves by using graphene of claim 7 ,wherein the graphene is formed on the substrate through a chemical vapor deposition method.9. The method for shielding electromagnetic waves by using graphene of claim 7 ,wherein the graphene is doped.10. The method for shielding electromagnetic ...

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Номер записи: 19
21-03-2013 дата публикации

Microwave plasma reactors

Номер: US20130069531A1
Автор: David King, Donnie K. Reinhard, Jes Asmussen, Jing Lu, Kadek W. Hemawan, M. Kagan Yaran, Michael Becker, Thomas Schuelke, Timothy Grotjohn, Yajun Gu
Принадлежит: Fraunhofer USA Inc, Michigan State University MSU

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

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Номер записи: 20
28-03-2013 дата публикации

Halogenated organoaminosilane precursors and methods for depositing films comprising same

Номер: US20130078392A1
Автор: Agnes Derecskei-Kovacs, Bing Han, Haripin Chandra, Heather Regina Bowen, Manchao Xiao, Mark Leonard O'Neill, Ronald Martin Pearlstein, XINJIAN LEI
Принадлежит: Air Products and Chemicals Inc

Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p   I wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 -C 10 alkyl, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; R 3 is selected from a branched C 3 -C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring.

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Номер записи: 21
28-03-2013 дата публикации

Method and Apparatus For Depositing A Layer On A Semiconductor Wafer by Vapor Deposition In A Process Chamber

Номер: US20130078743A1
Автор: Georg Brenninger
Принадлежит: SILTRONIC AG

A layer is deposited onto a semiconductor wafer by CVD in a process chamber having upper and lower covers, wherein the wafer front side temperature is measured; the wafer is heated to deposition temperature; the temperature of the upper process chamber cover is controlled to a target temperature by measuring the temperature of the center of the outer surface of the upper cover as the value of a controlled variable of an upper cover temperature control loop; a gas flow rate of process gas for depositing the layer is set; and a layer is deposited on the heated wafer front side during control of the upper cover temperature to the target temperature. A process chamber suitable therefor has a sensor for measuring the upper cover outer surface center temperature and a controller for controlling this temperature to a predetermined value.

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Номер записи: 22
11-04-2013 дата публикации

Method for forming nanocrystalline silicon film

Номер: US20130089972A1
Автор: Min Koo Han, Sun Jae Kim
Принадлежит: SNU R&DB FOUNDATION

Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate.

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Номер записи: 23
25-04-2013 дата публикации

Architectural construct having a plurality of implementations

Номер: US20130101808A1
Автор: Roy Edward McAlister
Принадлежит: McAlister Technologies LLC

An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct can be configured as a solid mass or as parallel layers that can be on a nano-, micro-, and macro-scale. Its configuration can determine its behavior and functionality under a variety of conditions. Implementations of an architectural construct can include its use as a substrate, sacrificial construct, carrier, filter, sensor, additive, and catalyst for other molecules, compounds, and substances, or may also include a means to store energy and generate power.

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Номер записи: 24
09-05-2013 дата публикации

Polycrystalline silicon production

Номер: US20130115374A1
Автор: II Urban Robert Kultgen, Krishnakumar M. Jayakar
Принадлежит: Individual

A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system.

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Номер записи: 25
16-05-2013 дата публикации

Sliding member

Номер: US20130121628A1
Автор: Koji Zushi, Shigeru Inami, Yukihiko Kagohara
Принадлежит: Daido Metal Co Ltd

Slide member is provided with an Al-based bearing alloy layer including Al and Si particles, and DLC layer laminated over Al-based bearing alloy layer. At least some of the Si particles included in Al-based bearing alloy layer are exposed on DLC layer side surface.

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Номер записи: 26
23-05-2013 дата публикации

Production method for semiconductor device

Номер: US20130130497A1
Автор: Gil Sun Jang, Hai Won Kim, Sang Ho Woo, Sung Kil Cho
Принадлежит: Eugene Technology Co Ltd

Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.

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Номер записи: 27
30-05-2013 дата публикации

METHOD OF FABRICATING A CARBON NANOTUBE ARRAY

Номер: US20130136860A1
Автор: Chen Weixing, Cui Xinwei
Принадлежит: THE GOVERNORS OF THE UNIVERSITY OF ALBERTA

A method of fabricating carbon nanotube arrays (CNTA) on an oxide catalyst layer is disclosed. In one embodiment, the oxide catalyst is a metal oxide. The metal oxide may be deposited on a substrate used as a support. The CNTA is grown on the oxide catalyst layer under conditions promoting CNT growth. CNT growth is dependent on temperature, concentration of oxidizing molecules and carbon availability. One embodiment of the method comprises depositing an oxide catalyst layer on the substrate, heating the catalyst layer at certain rates to the target temperatures, adding oxidation molecules for the pretreatment of the oxide catalyst layer, and growing the array on the substrate. The oxide catalyst layer may comprise a group VIII element. 1. A method of fabricating a carbon nanotube array , comprising growing a carbon nanotube array on an oxide catalyst layer under conditions promoting carbon nanotube growth.2. The method of further comprising depositing the oxide catalyst layer on a substrate used as a support prior to growing the carbon nanotube array on the oxide catalyst layer.3. The method of in which the oxide catalyst layer comprises a metal oxide.4. The method of in which the metal oxide comprises a group VIII element.5. The method of further comprising forming particles of metal oxide catalyst by heating the oxide catalyst layer and adding oxidation molecules for the pretreatment of the oxide catalyst layer prior to growing the CNTA on the oxide catalyst layer.6. The method of in which carbon nanotube (CNT) wall number and CNTA height are controlled simultaneously by changing one or more of the concentration of oxidizing molecules claim 1 , carbon precursor flow rates claim 1 , and the pretreatment time for the oxide catalyst layer.7. The method of further comprising controlling CNTA purity by controlling the CNTA growth time.8. The method of further comprising controlling the lengthening time of CNTA by controlling Hgas flow rate.9. The method of in which the ...

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Номер записи: 28
20-06-2013 дата публикации

METHOD FOR MANUFACTURING A POROUS SYNTHETIC DIAMOND MATERIAL

Номер: US20130156974A1
Автор: Girard Hugues, Scorsone Emmanuel
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A method of manufacturing a diamond layer having a porous three-dimensional structure, the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer, said material including the following steps; 1) provision of a substrate capable of supporting the plasma-enhanced chemical vapour deposition growth of the diamond layer on at least one of the surfaces of of the substrate, the substrate comprising, on said at least one surface thereof, a layer made of a sacrificial material having a porous three-dimensional structure capable of gradually decomposing upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size, and 2) growth by plasma-enhanced chemical vapour deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the scrificial material upon contact with said plasma. 1. Method for manufacturing a diamond layer having a porous three-dimensional structure , the method being of the type which includes growing the diamond layer from a sacrificial material and gradually decomposing said sacrificial material during growth of the diamond layer , said method including the following steps:1) provision of a substrate capable of supporting the plasma-enhanced chemical vapour deposition growth of the diamond layer on at least one of the faces of the substrate, the substrate comprising on said at least one face a layer made of a sacrificial material having a porous three-dimensional structure and being able to decompose progressively upon contact with said plasma, the layer of sacrificial material containing diamond grains of nanometric size;2) growth by plasma-enhanced chemical vapour deposition of the diamond layer from diamond grains and concomitant and gradual decomposition of the sacrificial material upon contact with said plasma.2. Method for manufacturing according ...

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Номер записи: 29
27-06-2013 дата публикации

APPARATUS FOR FORMING GAS BLOCKING LAYER AND METHOD THEREOF

Номер: US20130161184A1
Автор: Hong MunPyo, Jang Yun-Sung, Lee Jun Young, Lee You Jong
Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/mor more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object. 1. A gas blocking layer forming apparatus comprising:a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed;a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed;a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam; andcommon sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.2. The apparatus of claim 1 , further comprising:a plasma limiter that is provided among the holding unit, the neutral particle generation unit, and the common sputtering unit and generates a magnetic field in a horizontal direction in order for negative ions not to move toward the target object by confining electrons in plasma.4. The apparatus of claim 3 ,wherein the holding unit is configured to make a reciprocating movement within the vacuum chamber.5. The apparatus of ...

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Номер записи: 30
25-07-2013 дата публикации

PROCESS FOR DETERMINING SURFACE CONTAMINATION OF POLYCRYSTALLINE SILICON

Номер: US20130186325A1
Автор: Baumann Robert, WOCHNER Hanns
Принадлежит: Wacker Chemie AG

The invention provides a process for determining surface contamination of polycrystalline silicon, including the steps of: a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; b) determining contaminants in the first of the two rods immediately after the deposition; c) conducting the second rod through one or more systems in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed; d) then determining contaminants in the second rod; wherein the difference in the contaminants determined in the first and second rods gives surface contamination of polycrystalline silicon resulting from systems and the system environment. 1. A process for determining surface contamination of polycrystalline silicon , comprising the steps ofa) providing two polycrystalline silicon rods by deposition in a Siemens reactor;b) determining contaminants in a first rod of the two rods immediately after the deposition;c) conducting a second rod of the two rods through at least one system in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed;d) then determining contaminants in the second rod;wherein a difference in the contaminants determined in the first and second rods determines the surface contamination of polycrystalline silicon resulting from the at least one system and a system environment.2. The process as claimed in claim 1 , wherein contamination of the polycrystalline silicon with dopants or with carbon or with both is determined for the first and second rods.3. The process as claimed in claim 2 , wherein the dopants are members selected from the group consisting of boron claim 2 , phosphorus claim 2 , aluminum and arsenic.4. The process as claimed in claim 1 , wherein the first rod is packed in a polyethylene bag immediately after the deposition.5. The process as claimed in claim 2 , ...

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Номер записи: 31
25-07-2013 дата публикации

METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET

Номер: US20130187097A1
Автор: AHN Jong-Hyun, BAE Su Kang, HONG Byung Hee, JANG Houk, Jung Myung Hee, KIM Sang Jin, LEE Youngbin, YOO Ji Beom
Принадлежит:

The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD). 1. A producing method of graphene comprising:supplying a carbon source-containing gas to a substrate; andproducing graphene on the substrate at a low temperature of about 500° C. or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).2. The producing method of graphene of claim 1 ,wherein the substrate further includes a metal catalyst layer for growing graphene.3. The producing method of graphene of claim 1 , including:a step of loading the substrate into an ICP-CVD chamber and supplying the carbon source-containing gas to produce graphene at a low temperature by the ICP-CVD,wherein the substrate is loaded in sequence into the ICP-CVD chamber by using a load-locked chamber.4. The producing method of graphene of claim 2 , including:a step of forming the metal catalyst layer for growing graphene on the substrate by loading the substrate into a deposition chamber; anda step of loading the substrate into an ICP-CVD chamber and supplying the carbon source-containing gas to produce graphene at a low temperature by the ICP-CVD,wherein the substrate is loaded in sequence into the deposition chamber and the ICP-CVD chamber by using a load-locked chamber.5. The producing method of graphene of claim 1 ,wherein the graphene is produced through a roll-to-roll process.6. The producing method of graphene of claim 1 ,wherein the substrate has transparency or flexibility, or transparency and flexibility.7. (canceled)8. The producing method of graphene of claim 1 ,wherein the substrate is a ...

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Номер записи: 32
25-07-2013 дата публикации

Carbon nanotube producing apparatus and carbon nanotube producing method

Номер: US20130189432A1
Автор: Eiji Nakashima
Принадлежит: Aisin Seiki Co Ltd

Provided is a carbon nanotube producing apparatus comprising a reaction chamber that accommodates a substrate that forms carbon nanotubes and reactive gas supply mechanism for supplying a reactive gas to the substrate accommodated in the reaction chamber, in which the reactive gas supply mechanism has two or more shower plates having a plurality of gas ejection holes, the shower plates being overlappingly arranged so that the reactive gas passes therethrough in order and the reactive gas is supplied to a carbon nanotube forming face of the substrate and the shower plates are arranged so that the ejection holes of the shower plates that are adjacent to each other do not overlap each other in a gas ejection direction.

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Номер записи: 33
25-07-2013 дата публикации

LOW PRESSURE HIGH FREQUENCY PULSED PLASMA REACTOR FOR PRODUCING NANOPARTICLES

Номер: US20130189446A1
Автор: Casey James A., Shamamian Vasgen
Принадлежит:

The present invention provides a low-pressure very high frequency pulsed plasma reactor system for synthesis of nanoparticles. The system includes a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure. The system also includes a plasma source for generating a plasma from at least one precursor gas and a very high frequency radio frequency power source for providing continuous or pulsed radio frequency power to the plasma at a selected frequency. The frequency is selected based on a coupling efficiency between the pulsed radio frequency power and the plasma. Parameters of the VHF discharge and gas precursors are selected based on nanoparticle properties. The nanoparticle average size and particle size distribution are manipulated by controlling the residence time of the glow discharge (pulsing plasma) relative to the gas molecular residence time through the discharge and the mass flow rates of the nanoparticle precursor gas (or gases). 1. A low-pressure high-frequency pulsed plasma reactor system , comprising:flow rate controllers for controlling rates of at least one precursor gas;a chamber configured to receive at least one substrate and capable of being evacuated to a selected pressure;a plasma source for generating a plasma from said at least one precursor gas; anda very high frequency radio frequency power source for providing pulsed radio frequency power to the plasma at a radio frequency selected based on a coupling efficiency between the pulsed radio frequency power source and the plasma, wherein at least one parameter of the radio frequency power is selectable based on at least one property of nanoparticles formed by supplying the pulsed radio frequency power to the plasma.2. The system of claim 1 , wherein the flow rate controllers comprise at least one of a gas flow rate controller claim 1 , a mass flow rate controller claim 1 , an electrical controlled mass flow controller claim 1 , or a precision ...

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Номер записи: 34
25-07-2013 дата публикации

DLC FILM COATED PLASTIC CONTAINER, AND DEVICE AND METHOD FOR MANUFACTURING THE PLASTIC CONTAINER

Номер: US20130189448A1
Автор: ANDO Hideyasu, Shirakura Akira, YAMASAKI Teruyuki
Принадлежит: KIRIN BEER KABUSHIKI KAISHA

The present invention provides method of DLC film coating a plastic container by DLC film coating the container in an apparatus, where the apparatus comprises a container side electrode which forms one portion of a pressure-reducing chamber and a facing electrode, where the container side electrode is formed so that the average inner hole diameter (R) of the inner wall surrounding a neck portion is smaller than the average inner hole diameter (R) of the inner wall surrounding the body portion, and the average distance (d) between the outer wall of the container and the inner wall of the container side electrode in a horizontal cross section with respect to the vertical direction of the container at the neck portion becomes longer than the average distance (d) between the outer wall of the container and the inner wall of the container side electrode. 123-. (canceled)24. A method of DLC film coating a plastic container , comprising:DLC film coating said container in an apparatus, wherein said apparatus comprises:a container side electrode which forms one portion of a pressure-reducing chamber which houses a container formed from plastic in which the cross-sectional area of an opening of said container is smaller than the cross-sectional area of a horizontal cross section at a body portion of said container and a neck portion is provided between said opening and said body portion, and a facing electrode which faces said container side electrode and is arranged inside said container or above said opening, wherein said container side electrode and said facing electrode are made to face each other via an insulating body which forms a portion of said pressure-reducing chamber, source gas supply means which supply a source gas that is converted to plasma for coating the inner wall surface of said container with a diamond like carbon (DLC) film includes a supply gas inlet pipe provided in said pressure-reducing chamber to introduce said source gas supplied to said pressure- ...

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Номер записи: 35
01-08-2013 дата публикации

Method for producing a piston ring having embedded particles

Номер: US20130192458A1
Автор: Manfred Fischer, Marcus Kennedy, Michael Zinnabold, Robert R. Aharonov, Steffen Hoppe
Принадлежит: Individual

A sliding element, in particular a piston ring or a cylinder liner, comprising at least one a-C:H:Me layer, where Me is germanium and silicon, having a layer thickness of 10-40 μm, is provided.

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Номер записи: 36
01-08-2013 дата публикации

Plasma processing device

Номер: US20130192759A1
Автор: Akinori Ebe, Yuichi Setsuhara
Принадлежит: EMD Corp, Osaka University NUC

A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.

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Номер записи: 37
01-08-2013 дата публикации

CRYSTALLINE FILM DEVICES, APPARATUSES FOR AND METHODS OF FABRICATION

Номер: US20130196081A1
Автор: JEWETT Russell F., PUGH Steven F., Wickboldt Paul
Принадлежит:

Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained. 1. A method of fabricating devices having a material with crystalline content , the method being performed using an eddy current inductively coupled linear plasma source having a width and a length , the length being substantially greater than the width; the plasma source having a) a substantially conductive body comprising one or more conductive segments interrupted by at least one dielectric break; b) a current carrier adjacent to the substantially conductive body; c) a power supply that furnishes alternating current power to the current carrier , the current carrier inducing eddy currents within the one or more conductive segments; d) a process chamber attached to the conductive body so as to allow transport of chemical species from the conductive body to the process chamber , the method comprising:providing one or more reactive gases to the process chamber;generating a pure inductively coupled plasma with the plasma source; andtranslating a substrate beneath the plasma source using process conditions for producing the material with crystalline content.2. The method of claim 1 , further comprising flowing a gas through the plasma source.3. The method of claim 1 , wherein the materials with crystalline content comprise nanocrystalline silicon claim 1 , microcrystalline silicon claim 1 , or polycrystalline silicon.4. The method of claim 1 , wherein the material with crystalline content is deposited at a rate greater than 5 Å (0.5 nm) per second.5. The method of claim 1 , wherein the material with crystalline content ...

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Номер записи: 38
15-08-2013 дата публикации

FABRICATION METHOD FOR DIAMOND FILM COATING OF DRILL BIT

Номер: US20130209183A1
Автор: Chuo Yuag-Shan Kevin, Thompson Raymond G.
Принадлежит:

Tungsten carbide drill bits for removing material from alloys and other hard materials are disclosed. A conventional drill bit is modified by removing material from the forward portion of the bit to increase the radius of the cutting edge. The drill bit is then coated with a nanostructured diamond film using a chemical vapor deposition process. 1. A method for fabricating drill bits , comprising:etching material from a forward portion of a drill bit, wherein the forward portion has a cutting edge with a first radius;increasing the radius of the cutting edge so the cutting edge has a second radius that is greater than the first radius; anddepositing a coating on the etched drill bit with the second radius.2. The method of claim 1 , wherein the depositing is performed via microwave plasma assisted chemical vapor deposition claim 1 , and wherein the increasing is performed via sandblasting.3. The method of claim 1 , wherein the coating is a nanostructured diamond film.4. The method of claim 1 , wherein the increasing the radius step is performed via sandblasting.5. The method of claim 1 , wherein the increasing the radius step is performed via honing.6. The method of claim 1 , wherein the second radius is greater than 7 micrometers (μm).7. The method of claim 1 , wherein the second radius is greater than 15 micrometers (μm).8. The method of claim 1 , wherein the second radius is at least two times the first radius.9. The method of claim 1 , wherein the coating comprises diamond.10. A method for fabricating drill bits claim 1 , comprising:analyzing radial stresses expected for a drill bit when a coating of a material harder than a material of the drill bit is applied to the drill bit;selecting a radius for a cutting edge of the drill bit based on the analyzing;fabricating the drill bit such that the cutting edge has the selected radius; andapplying the coating to the drill bit.11. The method of claim 10 , wherein the coating comprises diamond.12. A drilling apparatus ...

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Номер записи: 39
15-08-2013 дата публикации

METHOD AND APPARATUS FOR IGNITING SILICON RODS OUTSIDE A CVD-REACTOR

Номер: US20130209684A1
Автор: Vollmar Wilfried
Принадлежит: CENTROTHERM SITEC GMBH

A method and a device for igniting silicon rods outside a CVD-reactor. A silicon rod is disposed inside a chamber of a casing of an ignition device. At least one pair of contact electrodes applies a first voltage supplied by a transformer with an open circuit voltage sufficiently high to initialize a current flow in and ignite the silicon rod. Optionally, the silicon rod may be heated by a current flow and/or an external heating unit to a temperature within a predetermined range. The silicon rod is removed from the ignition device and may be exposed to a depositing process inside a CVD-reactor. The ignition of the silicon rod outside the CVD-reactor facilitates a new ignition for the depositing process. 1. A method for igniting silicon rods outside a CVD-reactor for preparing a silicon rod for subsequent processing in a CVD-reactor , wherein the method comprises the following steps:disposing a silicon rod in an ignition device;applying a first voltage to the silicon rod by means of a first power supply unit, wherein the voltage is sufficient to ignite the silicon rod;conducting current through the silicon rod by means of the first power supply, in order to heat the silicon rod to a temperature within a predetermined temperature range; andremoving the silicon rod from the ignition device.2. The method according to claim 1 , wherein a gas atmosphere around the silicon rod is formed in the ignition device claim 1 , wherein the gas atmosphere is composed such that no reaction between the gas and the silicon rod occurs during ignition and heating.3. The method according to claim 2 , wherein the gas atmosphere generally consists of N claim 2 , H claim 2 , an inert gas claim 2 , or a mixture of two or more of these gases.4. The method according to claim 1 , wherein the silicon rod is heated to a temperature in a range between 400° C. and 700° C. and preferably to a temperature in a range between 450° C. and 600° C.5. The method according to claim 1 , wherein the silicon ...

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Номер записи: 40
22-08-2013 дата публикации

Implant with a base body of a biocorrodible alloy

Номер: US20130218265A1
Автор: Andreas Ohl, Antje Quade, Baerbel Becher, Carsten Momma, Daniel Lootz, Karsten Schroeder
Принадлежит: BIOTRONIK VI PATENT AG

An implant having a base body, comprised either entirely or in part of a biocorrodible metallic material wherein at least the parts of the base body having the biocorrodible metallic material are at least partially covered with a coating of a crosslinked CF x layer that is nonpolymerized and has an F/C ratio in the range of 0.5 to 1.5.

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Номер записи: 41
29-08-2013 дата публикации

Method for forming dlc film on spline shaft and hot cathode pig plasma cvd device

Номер: US20130220798A1
Автор: Akinori Iwai, Hiroyuki Hashitomi, Junji Ando, Nobuyoshi Yoshimura, Tomoki Ogawa, Tomoo Suzuki
Принадлежит: CNK Co Ltd Japan, JTEKT Corp

Plural spline shafts are arranged around columnar plasma, and plural spline shafts are coaxially aligned in a direction that the columnar plasma extends within a vacuum chamber. The plural coaxially aligned spline shafts are positioned so that axial gap is formed between the respective male spline sections. The axial gap of the plural male spline sections is positioned at a center of the columnar plasma in the direction that the columnar plasma extends.

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Номер записи: 42
29-08-2013 дата публикации

Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon

Номер: US20130224401A1
Автор: Masayuki Tebakari, Naoki Hatakeyama
Принадлежит: Mitsubishi Materials Corp

A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod.

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Номер записи: 43
05-09-2013 дата публикации

Substrate for cvd deposition of diamond and method for the preparation thereof

Номер: US20130230715A1
Автор: Andrey Bol'Shakov, Ekaterina V. Azarova, Evgeny A. Levashov, Evgeny E. Ashkinazi, Hiroshi Ishizuka, Satoru Hosomi, Victor G. Ralchenko
Принадлежит: General Physics Inst of Russian Academy of Science, National Univ of Science and Tech "Misis", Tomei Diamond Co Ltd

A substrate for depositing diamond by CVD, comprising a base body of hard material and a coating layer that holds diamond particles as seed crystal in a matrix and is deposited joined thereto on a surface of said base body, wherein: the seed diamond particles have an average particle size of 1 μm or smaller; the matrix comprises a first metal selected from a first group of Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W and/or a first compound between said first metal and a non-metallic substance selected from boron, carbon and nitrogen, said matrix holding the diamond particles distributed therein; and a joint zone developed as a result of a diffusion process and extending over said base body and coating layer comprises either or both atoms of said first metal and a component metal of the hard material.

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Номер записи: 44
12-09-2013 дата публикации

Method for coating micromechanical parts with dual diamond coating

Номер: US20130234165A1
Автор: Beat Gilomen, David Richard, Detlef Steinmuller, Doris Steinmuller, Herwig Drexel, Slimane Gnodbane, Stewes Bourban
Принадлежит: Swatch Group Research and Development SA

Method for coating micromechanical components of a micromechanical system, in particular a watch movement, comprising: providing a substrate ( 4 ) component to be coated; providing said component with a first diamond coating ( 2 ) doped with boron; providing said component with a second diamond coating ( 3 ); wherein: said second diamond coating ( 3 ) is provided by CVD in a reaction chamber; during CVD deposition, during the last portion of the growth process, a controlled increase of the carbon content within the reaction chamber is provided, thereby providing an increase of the sp2/sp3 carbon ( 6 ) bonds up to an sp2 content substantially between 1% and 45%. Corresponding micromechanical components are also provided.

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Номер записи: 45
12-09-2013 дата публикации

Rod-type polysilicon having improved breaking properties

Номер: US20130236642A1
Автор: Mikhail Sofin
Принадлежит: Wacker Chemie AG

Rod-type, polycrystalline silicon having a rod diameter of >100 mm are obtained by deposition of silicon-containing gas according to the Siemens method, wherein the Si rods are brought into contact with hydrogen at the end of the deposition process during cooling in the reactor, and the cooled Si rods obtained have in perpendicular cross section cracks and/or radial stresses having a defined size.

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Номер записи: 46
12-09-2013 дата публикации

Wear parts having coating run-out and methods of producing same

Номер: US20130236704A1
Автор: Liam S. Cavanaugh Pingree, Michael Howard-Edward Ware
Принадлежит: Boeing Co

Wear parts having run-out and methods of producing the same, systems and control structures used to produce wear parts having run-out, and associated methods and software are disclosed. Some methods utilize a plasma-enhanced chemical vapor deposition process to produce a coating with a desired coating profile on a wear part.

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Номер записи: 47
26-09-2013 дата публикации

Graphene-Coated Steel Sheet, and Method for Manufacturing Same

Номер: US20130251998A1
Автор: Chan Cuk Hwang, Han Na Hwang, Jae In Jeong, Ji Hoon Yang, Yong Gyun Jung
Принадлежит: Academy Industry Foundation of POSTECH, Posco Co Ltd

A graphene-coated steel sheet and a method for manufacturing the same are provided. The graphene-coated steel sheet includes a steel sheet and a graphene layer formed on the steel sheet. Therefore, the graphene-coated steel sheet can be useful in preventing corrosion of iron, such as oxidation of iron, and has remarkably excellent thermal conductivity and electrical conductivity, as well as excellent heat resistance resulting from thermal stability of graphene. Also, the method can be useful in manufacturing a high-quality graphene-coated steel sheet having a monocrystalline form and showing substantially no defects or impurities.

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Номер записи: 48
03-10-2013 дата публикации

NANOCRYSTALLINE DIAMOND FILM AND METHOD FOR FABRICATING THE SAME

Номер: US20130260157A1
Автор: BAIK Young Joon, LEE Hak Joo, LEE Wook Seong, PARK Jong Keuk
Принадлежит:

A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate. 1. A method for fabricating a nanocrystalline diamond thin film , comprising:preparing a silicon oxide-coated silicon substrate;surface-treating the substrate;immersing the substrate in a suspension of nanodiamond particles and dispersing and binding the nanodiamond particles onto the substrate by applying ultrasonic wave; andgrowing a nanocrystalline diamond thin film on the substrate on which the nanodiamond particles are bound,wherein, as a result of the surface treatment, an absolute value of a potential difference between the substrate and the nanodiamond particles becomes larger than that before the surface treatment.2. The method according to claim 1 , wherein said surface-treating the substrate comprises changing an Si—O bond of silicon oxide to a silanol group.3. The method according to claim 1 , wherein said surface-treating the substrate comprises changing an Si—O bond of silicon oxide to a Si—CHbond.4. The method according to claim 1 , wherein said surface-treating the substrate comprises treating the substrate surface with a hydrogen plasma.5. The method according to claim 1 , wherein said surface-treating the substrate comprises treating the substrate surface with a hydrogen plasma and a hydrocarbon plasma.6. The method according to claim 1 , wherein said surface-treating the substrate comprises thermally treating the substrate under a mixture gas atmosphere of hydrogen and ...

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Номер записи: 49
10-10-2013 дата публикации

Method for manufacturing carbon film and plasma cvd method

Номер: US20130264194A1
Автор: Ge Xu, Kazuto Yamanaka, Shogo Hiramatsu, Tsutomu Hiroishi
Принадлежит: Canon Anelva Corp

The present invention provides a method of manufacturing a carbon film and a plasma CVD method capable of performing film formation while controlling the temperature of a substrate as well as film properties. A process chamber according to one embodiment of the present invention includes a holder configured to hold a substrate, magnetic-field producing means configured to produce magnetic fields inside the process chamber, shields configured to suppress film deposition on the magnetic-field producing means, heat dissipating sheets configured to suppress heating of the magnetic-field producing means, and moving means configured to move the magnetic-field producing means. The magnetic-field producing means is characterized in being moved in such a direction as to increase or decrease the volume of a space between the magnetic-field producing means and the holder.

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Номер записи: 50
10-10-2013 дата публикации

CHEMICAL VAPOR DEPOSITION APPARATUS FOR SYNTHESIZING DIAMOND FILM AND METHOD FOR SYNTHESIZING DIAMOND FILM USING THE SAME

Номер: US20130266742A1
Автор: BAIK Young Joon, LEE Wook Seong, PARK Jong Keuk
Принадлежит: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

The present disclosure relates to a chemical vapor deposition apparatus for synthesizing a diamond film and a method for synthesizing a diamond film using the same, which maintains the substrate temperature at an optimum level by suppressing the rise of a substrate temperature, and, thus, improves the degree of activation of a diamond synthesizing gas to increase a diamond growth rate when synthesizing a diamond film. The chemical vapor deposition apparatus for synthesizing a diamond film according to the present disclosure includes a chamber in which a chemical vapor deposition process is performed, a substrate provided in the chamber and giving a place where diamond is grown, and a heat-shielding structure spaced above from the substrate, wherein the heat-shielding structure includes an opening through which a precursor gas is transferable. 1. A chemical vapor deposition apparatus for synthesizing a diamond film , comprising:a chamber in which a chemical vapor deposition process is performed;a substrate provided in the chamber and giving a place where diamond is grown; anda heat-shielding structure spaced upwards from the substrate,wherein the heat-shielding structure includes an opening through which a precursor gas is transferable.2. The chemical vapor deposition apparatus for synthesizing a diamond film according to claim 1 ,wherein the chemical vapor deposition apparatus is a hot filament chemical vapor deposition (HFCVD) apparatus, andwherein a high melting point filament is provided in an upper space of the chamber, and the heat-shielding structure is disposed between the high melting point filament and the substrate.3. The chemical vapor deposition apparatus for synthesizing a diamond film according to claim 1 ,wherein the chemical vapor deposition apparatus is a plasma assisted chemical vapor deposition (PACVD) apparatus, andwherein the heat-shielding structure is disposed in a space between the substrate and a plasma ball formed in an upper space of the ...

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Номер записи: 51
17-10-2013 дата публикации

APPARATUS AND METHOD FOR SUPPLYING ELECTRIC POWER TO A CVD-REACTOR

Номер: US20130273265A1
Автор: Vollmar Wilfried
Принадлежит: CENTROTHERM SITEC GMBH

An apparatus and method for applying a voltage across silicon rods in a CVD reactor has a series connection wherein the silicon rods may be inserted as resistors. A first power supply unit has first transformers connected with one silicon rod. A second power supply unit has second transformers connected to the same number of silicon rods as the first transformers in parallel to one or more of the first transformers. The second transformers have an open circuit voltage lower than the first transformers and a short circuit current higher than the first transformers. A third power supply unit has outputs connected with the silicon rods in parallel to the first and second transformers. The third power supply unit is capable of providing a current in a voltage range below the open circuit voltage of the second transformer and higher than the short circuit current of the second transformer. 1. An apparatus for applying a voltage across a plurality of silicon rods in a CVD reactor , said apparatus comprising: a series connection in which the silicon rods may be inserted as resistors; at least one first power supply unit; at least one second power supply unit; at least one third power supply unit; and at least one control unit which is capable of applying a voltage across the silicon rods at least one control unit which is capable of applying a voltage across the silicon rods in the series connection via the first , the second or the third power supply unit , wherein the first power supply unit comprises a plurality of first transformers , the outputs of which are each connected with one silicon rod in the series connection and wherein the first transformers have a first open circuit voltage and a first short circuit current , wherein the second power supply unit comprises a plurality of second transformers , the outputs of which are connected to the same number of silicon rods as the first transformers in the series connection , in parallel to one or more of the first ...

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Номер записи: 52
17-10-2013 дата публикации

Processing a sacrificial material during manufacture of a microfabricated product

Номер: US20130273326A1
Автор: Daniel Maurer, Guenther Denifl, Joachim Hirschler, Markus Kahn, Thomas Grille
Принадлежит: INFINEON TECHNOLOGIES AG

A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment.

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Номер записи: 53
24-10-2013 дата публикации

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON

Номер: US20130276700A1
Автор: Mizushima Kazuki, Urushihara Makoto
Принадлежит:

A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state. 16-. (canceled)7. A polycrystalline silicon producing apparatus which produces a silicon rod by supplying raw material gas including chlorosilanes to a silicon seed rod which is heated in a reactor so as to deposit polycrystalline silicon on the silicon seed rod , comprising:the reactor;the silicon seed rod which is disposed in the reactor;a power supply which supplies electric current to and heat the silicon seed rod;a pressure controller which controls an inner pressure of the reactor in a range equal to or larger than 0.4 MPa and equal to or lower than 0.9 MPa;a thermometer which measures a surface temperature of the silicon rod;a current control device which controls the surface temperature of the silicon rod measured by the thermometer in a range equal to or higher than 1000° C. and equal to or lower than 1100° C.;a raw material gas-supply source which supplies the raw material gas;a raw material gas-controller which controls a supply amount of the raw material gas from the raw material gas-supply source; anda pre-heater which preheats the raw material gas in a range equal to or higher than 150° C. and equal to or lower than 600° C.;{'sup': −7', '2', '−2', '2, 'wherein the supply amount of the raw material gas is controlled by the raw material gas-controller so that a supply amount of chlorosilanes included in the raw material gas is in a range equal to or larger than 2.0×10mol/sec/mmand equal to or smaller than 3. ...

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Номер записи: 54
31-10-2013 дата публикации

RADIOLOGICAL IMAGE DETECTION APPARATUS AND METHOD OF MANUFACTURING THE SAME

Номер: US20130284935A1
Автор: KANEKO Yasuhisa, KITADA Makoto, MIURA Kei, NAKATSUGAWA Haruyasu, SATO Keiichirou
Принадлежит:

The X-ray image detection apparatus includes: a scintillator panel including a phosphor that is formed on a support and emits fluorescence by irradiation of radiation; and a photodetector that detects the fluorescence emitted by the phosphor as an electric signal, wherein the phosphor includes a columnar section formed by growing crystals of a fluorescent material in a columnar shape, and a non-columnar section provided between the columnar section and the support and has a porosity lower than that of the columnar section , and the scintillator panel is disposed at the rear side of the photodetector in a radiation travelling direction, and in the phosphor , the non-columnar section is disposed at a side opposite to the photodetector side. 1. A radiological image detection apparatus comprising:a scintillator panel including a phosphor that is formed on a support and emits fluorescence by irradiation of radiation; anda photodetector that detects the fluorescence emitted by the phosphor as an electric signal,wherein the phosphor includes a columnar section formed by growing crystals of a fluorescent material in a columnar shape, and a non-columnar section provided between the columnar section and the support and having a porosity lower than that of the columnar section, andwherein the scintillator panel is disposed at a rear side of the photodetector in a radiation travelling direction, and the non-columnar section is disposed at a side opposite to the photodetector side in the phosphor.2. The radiological image detection apparatus of claim 1 , wherein the crystals of the fluorescent material in the non-columnar section includes a group of substantially spherical or indeterminate shape claim 1 , andat least some of the crystals included in the non-columnar section are fused to each other in an in-plane direction crossing a thickness direction of the non-columnar section at right angles.3. The radiological image detection apparatus of claim 1 , wherein a porosity of the ...

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Номер записи: 55
07-11-2013 дата публикации

GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF

Номер: US20130295385A1
Автор: HAUSWIRTH Rainer, HERTLEIN Harald, WEIDHAUS Dieter
Принадлежит:

Granular polycrystalline silicon includes a compact matrix including radiating acicular crystal aggregates of crystal size from 0.001-200 μm. A process for producing granular polycrystalline silicon includes producing granular silicon in a fluidized bed reactor from a gas mixture containing TCS (20-29 mol %) and hydrogen at a fluidized bed temperature of 900-970° C., dividing the granular silicon in a screen system having at least one screen deck into at least two screen fractions, the smallest screen fraction being ground in a grinding system to give seed particles having a size of 100-1500 μm and a mass-based median value from 400 to 900 μm, and these seed particles being supplied to fluidized bed reactor, and a further screen fraction being supplied to a fluidized bed reactor, and being surface-treated with a gas mixture containing TCS (5.1-10 mol %) and hydrogen at a fluidized bed temperature of 870-990° C. 1. Granular polycrystalline silicon comprising a compact matrix comprising radiating acicular crystal aggregates having a crystal size from 0.001 to 200 μm.2. The granular polycrystalline silicon as claimed in claim 1 , free of inclusions of ultrafine particles within a size range of less than 10 μm.3. The granular polycrystalline silicon as claimed in claim 1 , comprising a surface layer comprising acicular crystals arranged in parallel.4. The granular polycrystalline silicon as claimed in claim 1 , wherein the crystal size is 0.01 to 4 μm.5. The granular polycrystalline silicon as claimed in claim 4 , which is free of inclusions of ultrafine particles within a size range of less than 10 μm claim 4 , and comprises a surface layer comprising acicular crystals arranged in parallel.6. The granular polycrystalline silicon as claimed in claim 5 , having a particle size of 150 μm to 10 mm.7. Granular polycrystalline silicon comprising a compact matrix and a surface layer claim 5 , wherein the compact matrix and surface layer include acicular crystals arranged in ...

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Номер записи: 56
07-11-2013 дата публикации

Method for synthesis of cubic boron nitride and cubic boron nitride structure

Номер: US20130295387A1
Автор: Jong Keuk PARK, Wook Seong LEE, Young Joon Baik
Принадлежит: Korea Advanced Institute of Science and Technology KAIST

A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N 2 ), and hydrogen (H 2 ) is added to the reaction gas at a time after the deposition of a thin film occurs.

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Номер записи: 57
07-11-2013 дата публикации

POLYCRYSTALLINE SILICON PRODUCING METHOD, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON

Номер: US20130295401A1
Автор: Mizushima Kazuki, Urushihara Makoto
Принадлежит:

A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively. 17-. (canceled)8. Polycrystalline silicon having a diameter of 100 mm or larger , produced by a producing method comprising:supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat;supplying raw material gas including chlorosilanes to the silicon seed rod; anddepositing polycrystalline silicon on a surface of the silicon seed rod to be grown as a rod,wherein a pressure in the reactor is equal to or greater than 0.4 MPa and equal to or less than 0.9 MPa,the method includes a first process and a second process,{'sup': −7', '2', '−7', '2, 'in the first process, a surface temperature of the rod is maintained at a predetermined range by adjusting the current value in the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod to be equal to or greater than 2.0×10mol/sec/mmand equal to or less than 3.5×10mol/sec/mmuntil a temperature of the center portion of a rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, ...

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Номер записи: 58
07-11-2013 дата публикации

POLYCRYSTALLINE SILICON ROD AND PROCESS FOR PRODUCTION THEREOF

Номер: US20130295408A1
Автор: DORNBERGER Erich, KERSCHER Michael, KRAUS Heinz, PECH Reiner, Weber Martin
Принадлежит: Wacker Chemie AG

The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B. 1. A polycrystalline silicon rod having a total diameter of at least 150 mm , comprising: 'which is around a thin rod;', 'a core A having a porosity of 0 to less than 0.01,'}a region B around core A; anda region C around region B,wherein regions B and C differ in porosity by a factor of 1.7 to 23, and region C is less porous than region B.2. The polycrystalline silicon rod as claimed in claim 1 , wherein core A extends up to a diameter of not more than 60 mm.3. The polycrystalline silicon rod as claimed in claim 1 , wherein region B has a porosity of 0.06 to 0.23 and extends over a region of 15% of the total diameter to a maximum of 90% of the total diameter.4. The polycrystalline silicon rod as claimed in claim 1 , wherein region C has a porosity of 0.01 to 0.1 and extends over a region of at least 50% of the total diameter to a maximum of 100% of the total diameter claim 1 , region C having a lower porosity than region B.5. The polycrystalline silicon rod as claimed in claim 1 , further comprising a layer Z around region C claim 1 , which has a porosity of 0 to less than 0.01 and extends over a region of at least 90% of the total diameter to 100% of the total diameter.6. The polycrystalline silicon rod as claimed in claim 2 , wherein region B has a porosity of 0.06 to 0.23 and extends over a region of 15% of the total diameter to a maximum of 90% of the total diameter.7. The polycrystalline silicon rod as claimed in claim 6 , wherein region C has a porosity of 0.01 to 0.1 and extends over a region of at least 50% of the total diameter to a maximum of 100% of the total diameter claim 6 , region C having a lower porosity than region B.8. The ...

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Номер записи: 59
14-11-2013 дата публикации

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Номер: US20130302528A1
Автор: Kurosawa Yasushi, Netsu Shigeyoshi
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor. 17-. (canceled)8. A polycrystalline silicon production apparatus for producing polycrystalline silicon by a Siemens method , comprising:a reactor whose inner portion is hermetically sealed by a bell jar and a disk-like base plate;a gas flow control unit that supplies raw material gas into the bell jar at a desired flow rate;electrode pairs that conduct electricity to a plurality of silicon core wires; andone or more gas supply nozzles that supply the raw material gas to an inner space of the bell jar provided at the base plate;{'sub': 0', '0, 'wherein the gas supply nozzles are arranged within a virtual concentric circle having its center at a center of the base plate, and having an area S (=S/2) half as large as an area Sof the base plate, one of the gas supply nozzles being arranged at the center of the base plate, and the gas supply nozzles except the gas supply nozzle arranged at the center of the base plate being arranged at vertex positions of a regular polygon inscribed in a second virtual concentric circle having its center at the center of the base plate, and'}the gas flow control unit can control the raw material gas ejected from the gas supply nozzles at a flow velocity of 150 msec or more.9. The polycrystalline silicon production apparatus according to claim 8 ,wherein a gas ejection ...

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Номер записи: 60
14-11-2013 дата публикации

METHOD FOR GROWTH OF CARBON NANOFLAKES AND CARBON NANOFLAKE STRUCTURE

Номер: US20130302592A1
Автор: BAIK Young Joon, LEE Hak Joo, LEE Wook Seong, PARK Jong Keuk
Принадлежит: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH, Hand Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH, Hand Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH, Hand Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site. 1. A method for growing carbon nanoflakes , comprising:providing a silicon substrate having carbon nanotubes; and{'sub': 4', '2, 'growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH, Hand Ar as a precursor,'}{'sub': 4', '2, 'wherein the mixed gas of CH, Hand Ar is in an atmosphere with excess Ar during the chemical vapor deposition process, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.'}2. The method for growing carbon nanoflakes according to claim 1 , wherein the mixed gas of CH claim 1 , Hand Ar has a composition of CH:H:Ar=1:4-15:84-95.3. The method for growing carbon nanoflakes according to claim 1 , wherein the carbon nanotubes are multi-walled carbon nanotubes (MWCNTs) or single-walled carbon nanotubes (SWCNTs).4. The method for growing carbon nanoflakes according to claim 1 , wherein the providing the silicon substrate having carbon nanotubes comprises:preparing a methanol solution in which carbon nanotubes are dispersed;casting ...

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Номер записи: 61
21-11-2013 дата публикации

Substrate processing apparatus

Номер: US20130305991A1
Автор: Atsushi Moriya, Kiyohiko Maeda, Kiyohisa Ishibashi, Takaaki Noda
Принадлежит: HITACHI KOKUSAI ELECTRIC INC

A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

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Номер записи: 62
28-11-2013 дата публикации

COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE

Номер: US20130316167A1
Автор: Robinson Joshua, Yager Thomas A.
Принадлежит: Empire Technology Developement LLC

Technologies are presented for growing graphene by chemical vapor deposition (CVD) on a high purity copper surface. The surface may be prepared by deposition of a high purity copper layer on a lower purity copper substrate using deposition processes such as sputtering, evaporation, electroplating, or CVD. The deposition of the high purity copper layer may be followed by a thermal treatment to facilitate grain growth. Use of the high purity copper layer in combination with the lower purity copper substrate may provide thermal expansion matching, compatibility with copper etch removal, or reduction of contamination, producing fewer graphene defects compared to direct deposition on a lower purity substrate at substantially less expense than deposition approaches using a high purity copper foil substrate. 1. A method of manufacturing graphene , comprising:providing a copper substrate that includes a first copper layer in contact with a second copper layer, the first copper layer characterized by a first copper percentage by weight and the second copper layer characterized by a second copper percentage by weight, wherein the second copper percentage is greater than the first copper percentage; andgrowing a graphene monolayer via chemical vapor deposition on the second copper layer.2. The method of claim 1 , wherein:the first copper layer is further characterized by a first oxygen percentage by weight;the second copper layer is further characterized by a second oxygen percentage by weight; andthe second oxygen percentage is about the same or less than the first oxygen percentage.3. The method of claim 1 , wherein in a dimension perpendicular to the graphene monolayer claim 1 ,the first copper layer is characterized by a first average thickness;the second copper layer is characterized by a second average thickness; andthe second average thickness is less than the first average thickness.4. The method of claim 3 , wherein the first average thickness is at least about 3 ...

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Номер записи: 63
05-12-2013 дата публикации

Apparatus and Methods for the Synthesis of Graphene by Chemical Vapor Deposition

Номер: US20130323157A1
Автор: Xuesong Li
Принадлежит: Bluestone Global Technology Ltd

An apparatus is provided for synthesizing a film on a substrate in a reactor that defines an outer reaction space. The apparatus comprises a vessel body and one or more vessel closures. The one or more vessel closures are adapted to be removably attached to the vessel body to form a reaction vessel therewith. The reaction vessel: i) comprises graphite; ii) defines an inner reaction space adapted to contain the substrate; iii) is adapted to be placed within the outer reaction space; and iv) is adapted to allow gas outside the reaction vessel to enter the inner reaction space.

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Номер записи: 64
12-12-2013 дата публикации

Method of forming thin film poly silicon layer

Номер: US20130330934A1
Автор: Chin-Chang Liu, Heng-Yi Chang, Hieng-Hsiung Huang, Wen-Chun Wang
Принадлежит: Wintek Corp

A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.

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Номер записи: 65
19-12-2013 дата публикации

Microwave power delivery system for plasma reactors

Номер: US20130334964A1
Автор: Christopher John Howard Wort, John Robert Brandon
Принадлежит: Element Six Ltd

(EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors ( 8 ), the microwave power delivery system comprising: a tuner ( 14 ) configured to be coupled to a microwave source ( 4 ) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction ( 18 ) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink ( 20 ), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

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Номер записи: 66
19-12-2013 дата публикации

High density polycrystalline superhard material

Номер: US20130337248A1
Автор: Mehmet Serdar Ozbayraktar
Принадлежит: Element Six Abrasives SA

A polycrystalline superhard material comprises a mass of diamond, graphite or cubic boron nitride particles or grains bonded together by ultrathin inter-granular bonding layers, the inter-granular bonding layers having an average thickness of greater than about 0.3 nm and less than about 100 nm. There is also disclosed a method for making such a polycrystalline superhard material.

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Номер записи: 67
09-01-2014 дата публикации

METHOD FOR CONTROLLING THE STRUCTURE OF PYROLYTIC CARBON

Номер: US20140010997A1
Автор: GUNNING James, Patel Jim
Принадлежит: Commonwealth Scientific and Industrial Research Organisation

A process for the production of pyrolytic carbon comprising the steps of: (A) depositing pyrolytic carbon on a substrate, and (B) controlling the structure of the deposited pyrolytic carbon through use of a Volmer-Weber island growth model. 1. A process for the production of pyrolytic carbon comprising the steps of:(A) depositing pyrolytic carbon on a substrate; and(B) controlling the structure of the deposited pyrolytic carbon through use of a Volmer-Weber island growth model.2. The process according to claim 1 , wherein the controlling of the structure of the deposited pyrolytic carbon comprises the manipulation of one or more of the following parameters:a. the rate of nucleation;b. the rate of growth;c. the elevation of a portion of the substrate surface.3. The process according to claim 2 , wherein the controlling of the structure of the deposited pyrolytic carbon comprises the manipulation of two or more of said parameters.4. The process according to claim 2 , wherein the controlling of the structure of the deposited pyrolytic carbon includes the manipulation of all said parameters.5. The process according to claim 2 , wherein the controlling of the structure of the deposited pyrolytic carbon comprises the manipulation of the elevation of a portion of the substrate surface.6. The process according to claim 5 , wherein the portion of elevated substrate surface is in the range of 0.01% to 50% of the total surface of the substrate.7. The process according to claim 5 , wherein the elevated surface is a plurality of protrusions emanating from a base surface of the substrate.8. The process according to claim 7 , wherein the protrusions are arranged in a geometric pattern on the base surface of the substrate.9. The process according to claim 6 , wherein the elevated surface is configured to promote the preferential formation of nucleation sites relative to a base surface of the substrate.10. The process according to claim 2 , wherein the elevated portion is at least ...

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Номер записи: 68
23-01-2014 дата публикации

APPARATUS FOR MANUFACTURING GRAPHENE FILM AND METHOD FOR MANUFACTURING GRAPHENE FILM

Номер: US20140023783A1
Автор: Yoon Jong-Hyuk
Принадлежит: SAMSUNG TECHWIN CO., LTD.

Provided is a graphene film manufacturing apparatus including a source fluid supply unit for supplying a source fluid containing carbon; a gas discharge unit for receiving the source fluid from the source fluid supply unit, thermally decomposing the source fluid into a gas, and discharging the gas; a catalyst substrate disposed to contact the gas discharged from the gas discharge unit, and a heating device disposed to locally heat a region of the catalyst substrate that contacts the discharged gas. 1. An apparatus for manufacturing a graphene film , the apparatus comprising:a source fluid supply unit for supplying a source fluid containing carbon;a gas discharge unit for receiving the source fluid from the source fluid supply unit, thermally decomposing the source fluid into a gas, and discharging the gas;a catalyst substrate disposed to contact the gas discharged from the gas discharge unit; anda heating device disposed to locally heat at least a region of the catalyst substrate that contacts the discharged gas.2. The apparatus of claim 1 , further comprising a fluid flow rate controller disposed at one end of the source fluid supply unit to control a flow rate of the source fluid supplied to the gas discharge unit from the source fluid supply unit.3. The apparatus of claim 1 , wherein the source fluid further comprises an inert gas and hydrogen gas.4. The apparatus of claim 1 , wherein the gas discharge unit comprises:a storage member for containing the source fluid;a heating member disposed at external sides of the storage member and configured to thermally decompose the source fluid; anda nozzle member connected to the storage member and configured to discharge the thermally decomposed gas.5. The apparatus of claim 1 , wherein the gas discharge unit extends to have a width corresponding to a width of a side of the catalyst substrate.6. The apparatus of claim 1 , wherein the heating device is disposed facing a surface opposite to a surface of the catalyst ...

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Номер записи: 69
30-01-2014 дата публикации

Deposition of Graphene or Conjugated Carbons Using Radical Reactor

Номер: US20140030447A1
Автор: Hwang Chang Wan, LEE Sang In
Принадлежит: SYNOS TECHNOLOGY, INC.

Depositing a layer of graphene or conjugate carbons on a surface of a substrate using carbon radicals generated by exposing a carbon material to radicals of a gas. The radicals of the gas are generated by injecting the gas into a plasma chamber and then applying voltage difference to electrodes within or surrounding the plasma chamber. The radicals of the gas come into contact with the carbon material (e.g., graphite) and excite carbon radicals. The excited carbon radicals are injected onto the surface of the substrate, passes through a constriction zone of the reactor assembly and are then exhausted through a discharge portion of the reactor assembly. When the excited carbon radicals come into contact with the substrate, the carbon radicals form a layer of graphene or conjugated carbons on the substrate. 1. A method of depositing a layer of graphene or conjugated carbons , comprising:injecting radicals of a gas onto a surface of carbon material to generate carbon radicals;exposing a part of a surface of a substrate to the generated carbon radicals to deposit the layer of graphene or conjugated carbons; andmoving the substrate to expose different parts of the surface of the substrate to the generated carbon radicals.2. The method of claim 1 , wherein the gas comprises an oxygen compound.3. The method of claim 2 , wherein the gas further comprises inert gas.4. The method of claim 1 , wherein the carbon material comprises graphite.5. The method of claim 1 , wherein the conjugated carbons comprise at least one of graphyne claim 1 , graphane claim 1 , graphene oxide and carbon nanotubes.6. The method of claim 1 , further comprising discharging excess carbon radicals remaining after exposing to the part of the surface of the substrate.7. The method of claim 1 , further comprising:injecting gas into a plasma chamber defined by a first electrode and a second electrode; andapplying voltage difference across the first electrode and the second electrode to generate the ...

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Номер записи: 70
06-02-2014 дата публикации

VAPOR DEPOSITION DEVICE AND VAPOR DEPOSITION METHOD

Номер: US20140038395A1
Автор: Ito Takahiro, Jun Keeyoung, Kozawa Takahiro, Nakashima Kenji
Принадлежит: TOYOTA JIDOSHA KABUSHIKI KAISHA

A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber. 15.-. (canceled)6. A vapor deposition device for depositing a silicon film on a surface of a substrate , the device comprising:a vapor deposition chamber;a heating chamber;a mixing chamber;a first reservoir for storing trichlorosilane gas; anda second reservoir for storing silane gas that reacts with hydrochloric acid gas,whereinthe heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas supplied from the first reservoir and then supplies the heated gas to the mixing chamber,the mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber, anda temperature in the heating chamber is higher than a temperature in the mixing chamber.7. The vapor deposition device according to claim 6 , wherein the silane gas is dichlorosilane gas.8. The vapor deposition device according to claim 6 , whereinthe heating chamber comprises a heating unit that heats the trichlorosilane gas to 700 to 1000 degrees Celsius.9. The vapor deposition device according to claim 6 , whereinthe mixing chamber comprises a cooling unit that cools the mixed gas.10. A method of ...

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Номер записи: 71
13-02-2014 дата публикации

GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF

Номер: US20140044874A1
Автор: CHIU PO-WEN, LU Chun-Chieh, Teng Po-Yuan
Принадлежит: National Tsing Hua University

The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications. 1. A graphene manufacturing system for growing graphene layers on an insulated surface of a work piece , comprising:a furnace body having a working chamber for holding the work piece;a catalyst source, configured in the outside of the furnace body, the catalyst source is connected with the working chamber for providing the working chamber with gasiform catalyst containing a transition metal element;a hydrogen source, connected with the working chamber for providing the working chamber with hydrogen; anda carbon feedstock source, connected with the working chamber for providing the working chamber with gasiform carbon feedstock;wherein, the catalyst source can react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of the carbon feedstock for generating a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated substrates of the work piece.2. The graphene manufacturing system of claim 1 , wherein the catalyst comprises a gasiform carrier and a catalytic particle solution.3. The graphene manufacturing system of claim 2 , wherein the catalyst source comprises an inlet end claim 2 , an ...

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Номер записи: 72
13-02-2014 дата публикации

Method and system for graphene formation

Номер: US20140044885A1
Автор: David A. Boyd
Принадлежит: California Institute of Technology CalTech

A method for forming graphene includes providing a substrate and subjecting the substrate to a reduced pressure environment. The method also includes providing a carrier gas and a carbon source and exposing at least a portion of the substrate to the carrier gas and the carbon source. The method further includes performing a surface treatment process on the at least a portion of the substrate and converting a portion of the carbon source to graphene disposed on the at least a portion of the substrate.

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Номер записи: 73
20-02-2014 дата публикации

MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL

Номер: US20140048016A1
Автор: Brandon John Robert, Coe Steven Edward, DODSON JOSEPH MICHAEL, Scarsbrook Geoffrey Alan, Wilman Jonathan James, Wort Christopher John Howard
Принадлежит: ELEMENT SIX LIMITED

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: 1. A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition , the microwave plasma reactor comprising:a plasma chamber;a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use;a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; anda gas flow system for feeding process gases into the plasma chamber and removing them therefrom;wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber when viewed down a central axis of the plasma chamber, andwherein the electrically conductive plasma stabilizing annulus is in the form of a projecting ring which protrudes into the plasma chamber from a side wall of the plasma chamber.26-. (canceled)7. A microwave plasma reactor according to claim 1 , wherein the electrically conductive plasma stabilizing annulus has a radial width relative to a diameter of the plasma chamber in the range 1% to 30% claim 1 , 3% to 20% claim 1 , 5% to 15% claim 1 , or 8% to 12%.8. A microwave plasma reactor according to claim 1 , wherein the electrically conductive plasma stabilizing annulus has a radial width in a range: 10 mm to 165 mm claim 1 , 20 mm to 100 mm claim 1 , or 40 mm to 80 mm for a microwave frequency f in the range 400 MHz to 500 MHz; 5 mm to 100 mm claim 1 , 10 mm to 50 mm claim 1 , or 20 mm to 40 mm for a microwave frequency f in the range 800 MHz to 1000 MHz; or 2 mm to 30 mm claim 1 , 4 mm to 20 mm claim 1 , or 6mm to 15 mm for a microwave frequency f in the range 2300 MHz to 2600 MHz.9. A microwave plasma reactor according to claim 1 , wherein the ...

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Номер записи: 74
20-02-2014 дата публикации

Aluminum precursor composition

Номер: US20140050848A1
Автор: Myeong-Ho Park, Won Seok Han, Wonyong Koh
Принадлежит: UP Chemical Co Ltd

The present disclosure is related to an aluminum-containing precursor composition, especially a precursor composition which is vaporized to be used for vapor phase deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD).

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Номер записи: 75
20-02-2014 дата публикации

METHOD FOR PRODUCING A HARDENED, COATED METAL COMPONENT

Номер: US20140050932A1
Автор: Gierl Juergen, HOSENFELDT Tim Matthias, MUSAYEV Yashar
Принадлежит: SCHAEFFLER TECHNOLOGIES AG & CO. KG

Production of a hardened, coated metal component, including the following steps: a. performing a heat treatment of the metal component for accumulating carbon and/or nitrogen in the edge layer of the metal component, b. quenching the metal component to a temperature below the martensite start temperature, c. annealing the metal component to a temperature that is higher than the temperature of a deposition method to be subsequently performed for applying a coating, and applying a coating via gas phase deposition. 111to . (canceled)12. A method for producing a hardened , coated metal component with the following steps:a. carrying out a heat treatment of the metal component to concentrate carbon and/or nitrogen in the outer layer of the metal component;b. quenching the metal component to a temperature below the martensite start temperature;c. tempering the metal component to a temperature which is higher than the temperature of a deposition process to be subsequently carried out for applying a coating; andd. applying the coating via vapor phase deposition.13. The method as recited in further comprising surface working the surface to be coated of the metal component after the tempering and before the coating.14. The method as recited in wherein the surface working includes machining.15. The method as recited in wherein the heat treatment is carried out at a temperature of 750-1100° C.16. The method as recited in wherein the tempering temperature is 20-40° C. above the deposition temperature.17. The method as recited in wherein the vapor phase deposition is a CVD claim 12 , PVD or a PACVD process.18. The method as recited in wherein the deposition temperature is 300-650° C.19. The method as recited in wherein the coating is deposited with a thickness of ≦10 μm.20. The method as recited in wherein a layer system at least comprising an adhesion promoting layer and a functional layer is applied as the coating.21. The method as recited in wherein the layer system has an ...

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Номер записи: 76
20-03-2014 дата публикации

Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium

Номер: US20140080318A1
Автор: Katsuko Higashino, Kazutaka Yanagita, Norikazu Mizuno, Yoshiro Hirose
Принадлежит: HITACHI KOKUSAI ELECTRIC INC, Kokusai Electric Corp, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude

Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source to the substrate, the first source containing the specific element and a halogen-group; and supplying a second source to the substrate, the second source containing the specific element and an amino-group, and having amino-group-containing ligands whose number is two or less in its composition formula and not more than the number of halogen-group-containing ligands in the composition formula of the first source.

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Номер записи: 77
10-04-2014 дата публикации

Plasma-generating device

Номер: US20140097740A1
Автор: I-Nan Lin
Принадлежит: Tamkang Univ

A plasma-generating device includes an anode plate and a cathode plate spaced apart from the anode plate. The cathode plate includes a substrate and a hybrid diamond layer formed on the substrate. The hybrid diamond layer includes ultra-nanocrystalline diamond grains, an amorphous carbon disposed among and bonded to the ultra-nanocrystalline diamond grains, micro-crystalline diamond grains disposed among the ultra-nanocrystalline diamond grains, and a graphite phase disposed among the ultra-nanocrystalline diamond grains. Each of the micro-crystalline diamond grains is surrounded by the graphite phase.

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Номер записи: 78
07-01-2016 дата публикации

CARBON NANOSTRUCTURE, AND METHOD AND APPARATUS FOR MANUFACTURING CARBON NANOSTRUCTURE

Номер: US20160002041A1
Автор: Fujita Jun-ichi, HIGASHI Yugo, HIKATA Takeshi, MURAKAMI Katsuhisa, OKUBO Soichiro, UTSUNOMIYA Risa
Принадлежит: Sumitomo Electric Industries, Ltd.

A method for manufacturing a carbon nanostructure according to the present invention includes a preparation step of preparing a base body, an oxidization step and a step of growing a carbon nanostructure. In the step of preparing a base body, a base body with at least a part of a contact portion or an integral portion of a catalyst member and a separation member having been oxidized is prepared. In the step of growing a carbon nanostructure, a carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member. The step of growing a carbon nanostructure includes at least one of a step of locally supplying a source gas to a portion of the catalyst member facing the separation interface region where the carbon nanostructure is being grown, and a step of locally heating the separation interface region. 1. A method for manufacturing a carbon nanostructure , comprising the steps of:preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other, at least a part of a contact portion or an integral portion of said catalyst member and said separation member having been oxidized; andgrowing a carbon nanostructure in a separation interface region between said catalyst member and said separation member, by heating said base body with said separation member being separated from said catalyst member while supplying a source gas containing carbon to said base body,said step of growing a carbon nanostructure including at least one of a step of locally supplying said source gas to a portion of said catalyst member facing said separation interface region where said carbon nanostructure is being grown, and a step of locally heating said separation interface region.2. The method for manufacturing a carbon nanostructure according to claim 1 , wherein claim 1 , in said step of growing a carbon nanostructure claim 1 , both of said step of supplying a source ...

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Номер записи: 79
05-01-2017 дата публикации

METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Номер: US20170001869A1
Автор: HERTLEIN Harald, POPP Friedrich
Принадлежит: Wacker Chemie AG

The native oxide layer on silicon support rods in the Siemens polysilicon production process is removed by heating the rods to a temperature of 1100-1200° C. and contacting the rods with hydrogen at a system pressure of 1.1E5 to 6E6 Pa. Oxide is rapidly removed, reducing overall process time and increasing space time yield. The use of hydrogen, optionally purified from a polysilicon deposition and containing only traces of HCl reduces reactor corrosion and loss of silicon from the support rods. 17-. (canceled)8. A process for producing polycrystalline silicon , comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor , the reactor comprising at least one support body made from silicon which is heated by direct passage of current , decomposing the silicon-containing component , depositing polycrystalline silicon on the at least one support body , the at least one support body made from silicon having an oxide layer , and prior to commencing deposition of polycrystalline silicon on the at least one support body , removing the oxide layer by heating the at least one support body up to a temperature of 1100-1200° C. and exposing the at least one support body to an atmosphere comprising hydrogen at a system pressure of 1.1×10to 6×10Pa , by feeding a purge gas comprising hydrogen to the reactor.9. The process of claim 8 , wherein the system pressure is 1.1×10to 2×10Pa.10. The process of claim 8 , wherein a purge gas rate claim 8 , based on the reactor volume claim 8 , is 10-25 m(STP)/h per mof reactor volume.11. The process of claim 9 , wherein a purge gas rate claim 9 , based on the reactor volume claim 9 , is 10-25 m(STP)/h per mof reactor volume.12. The process of claim 10 , wherein the purge gas rate claim 10 , based on the reactor volume claim 10 , is 14 to 19 m(STP)/h per mof reactor volume.13. The process of claim 8 , wherein the purge gas is hydrogen having a purity of 99 to 99.9999999% by volume and optionally ...

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Номер записи: 80
04-01-2018 дата публикации

POLYCRYSTALLINE SILICON ROD, PRODUCTION METHOD THEREFOR, AND FZ SILICON SINGLE CRYSTAL

Номер: US20180002180A1
Автор: Miyao Shuichi, Netsu Shigeyoshi
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle φ on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs φ-scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (S/S) between an area Sof a peak part appearing in the diffraction chart and a total area Sof the diffraction chart is calculated. 16.-. (canceled)7. A production method for a polycrystalline silicon rod having a radius R of 65 mm or more by a chemical vapor deposition method , the production method comprisingcausing the polycrystalline silicon rod to grow under a condition set such that a feed gas amount is reduced by 2% or more in a second region from r=R/3 to r=R/2, and furthermore, the feed gas amount is reduced by 5% or more in a third region from r=R/2 to r=R in a deposition step of the polycrystalline silicon rod, where the feed gas amount at the start of deposition is set to be 100, and r=0 at a center of the polycrystalline silicon rod.8. A polycrystalline silicon rod produced by the method according to claim 7 , wherein{'sub': p', 't, 'an area ratio S/Swhich is evaluated through the following procedure by an X-ray diffraction method being 2% or less, the procedure including(1a) sampling a plate-shaped sample with a cross-section perpendicular to a radial direction of the polycrystalline silicon rod as a principal surface from a region from a center (r=0) of the polycrystalline silicon rod to R/3;(1b) disposing the plate-shaped ...

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Номер записи: 81
02-01-2020 дата публикации

APPARATUS AND METHOD FOR SYNTHESIZING VERTICALLY ALIGNED CARBON NANOTUBES

Номер: US20200002171A1
Автор: Li Wenzhi
Принадлежит: THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES

Methods and devices to synthesize vertically aligned carbon nanotube (VACNT) arrays directly on a catalytic conductive substrate without addition of an external metallic catalyst layer and without any pretreatment to the substrate surface using a plasma enhanced chemical vapor deposition (PECVD) method are provided. A method comprises providing a catalytic conductive substrate, that has not been pretreated through a plasma enhanced chemical vapor deposition (PECVD) method or other methods, to a PECVD device, etching the catalytic conductive substrate to form catalytically active nano-features on the surface of the catalytic conductive substrate, and growing vertically aligned carbon nanotubes on the surface of the catalytic conductive substrate, without an external metallic catalyst layer, by providing a carbon source gas to the catalytic conductive substrate. 1. A plasma enhanced chemical vapor deposition (PECVD) apparatus , comprising:a tube;two metallic rods disposed inside the tube and each having a respective electrode disposed on an inner end of each metallic rod of the two metallic rods;a substrate holder disposed on an inner end of one of the two metallic rods;an external heating device surrounding the substrate holder;a thermocouple device disposed inside the tube and configured to monitor a temperature and provide feedback to the power supply of the heating device;a gas inlet valve and a gas outlet valve connected to the tube; anda voltage supply electrically connected to the two metallic rods and configured to supply a desired bias voltage to generate plasma inside the tube.2. The apparatus according to claim 1 , further comprising a heat reflector disposed inside the tube.3. The apparatus according to claim 1 , further comprising a pump connected to the gas outlet valve.4. The apparatus according to claim 1 , further comprising a pressure gauge configured to detect a pressure inside the tube.5. The apparatus according to claim 1 , the external heating ...

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Номер записи: 82
02-01-2020 дата публикации

CORE WIRE FOR USE IN SILICON DEPOSITION, METHOD FOR PRODUCING SAID CORE WIRE, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Номер: US20200002178A1
Автор: Inoue Yuji, NISHIKAWA Masayoshi
Принадлежит:

Efficiency of producing polycrystalline silicon is improved. A silicon filament () is constituted by a rod-shaped member made of polycrystalline silicon. The polycrystalline silicon has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma. On a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm are observed. 1. A silicon deposition filament ,the silicon deposition filament being constituted by a rod-shaped member made of polycrystalline silicon,the polycrystalline silicon having an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma,on a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm being observed.2. The silicon deposition filament as set forth in claim 1 , wherein distribution claim 1 , in the lengthwise direction of the rod-shaped member claim 1 , of the interstitial oxygen concentration of the polycrystalline silicon is such that claim 1 , in a case where the interstitial oxygen concentration at any location in the lengthwise direction is regarded as a reference claim 1 , the interstitial oxygen concentration varies by not more than ±5 ppma/m with respect to the reference.3. The silicon deposition filament as set forth in claim 1 , wherein the silicon deposition filament has a yield stress of not less than 150 MPa per square centimeter at 900° C.4. The silicon deposition filament as set forth in claim 1 , wherein a total concentration of phosphorus and boron claim 1 , which are contained in the polycrystalline silicon claim 1 , is not more than 1 ppba.5. The silicon deposition filament as set forth in claim 1 , wherein:{'sup': 2', '2, 'a cross-sectional area of the silicon deposition filament is not less than 0.1 cmand not more than 6 cm; and'}a length of the silicon deposition filament is not less than 0.5 m.6. A method ...

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Номер записи: 83
03-01-2019 дата публикации

REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON

Номер: US20190002295A1
Автор: Hoshino Naruhiro, Kurosawa Yasushi, Netsu Shigeyoshi
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A reactor according to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater to initial heating of silicon core wires. A carbon heater is loaded in a deposition reaction space in the reactor only when necessary for initial heating of silicon core wires . After initial heating of the silicon core wires is finished, the carbon heater is unloaded from the deposition reaction space to the heater storage section . As a result, the carbon heater is not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced. 15-. (canceled)6. A reactor for producing polycrystalline silicon by a Siemens method , comprising:a deposition reaction section as a space section in which polycrystalline silicon is deposited onto a silicon core wire, anda heater storage section as a space section capable of accommodating a carbon heater for initial heating of the silicon core wire.7. The reactor for polycrystalline silicon production according to claim 6 , comprising an operable and closable shutter for spatially blocking the heater storage section from the deposition reaction section.8. The reactor for polycrystalline silicon production according claim 6 , wherein the storage section comprises bellows.9. The reactor for polycrystalline silicon production according to claim 6 , comprising a heater driving section for controlling loading of the carbon heater from the heater storage section to the deposition reaction section and unloading of the heater from the deposition reaction section to the heater storage section.10. The reactor for polycrystalline silicon production according to claim 9 , comprising all openable and closable shutter for spatially blocking the heater storage section from the deposition reaction section.11. ...

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Номер записи: 84
06-01-2022 дата публикации

SELECTIVE DEPOSITION OF CARBON ON PHOTORESIST LAYER FOR LITHOGRAPHY APPLICATIONS

Номер: US20220005688A1
Автор: Fung Nancy, GAO LARRY
Принадлежит:

Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon. 1. A method for etching a hardmask layer , comprising:forming a photoresist layer comprising an organometallic material on the hardmask layer;exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern;removing un-irradiated areas of the photoresist layer to form a patterned photoresist layer; selectively depositing passivation material over the top surface; and', 'trimming undesired portions of the passivation material; and, 'forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, wherein the forming the passivation layer comprisesetching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.2. The method of claim 1 , wherein the organometallic material comprises one or more metal elements and organic ligands.3. The method of claim 2 , wherein the one or more metal elements comprise tin (Sn).4. The method of claim 1 , wherein the trimming the undesired portions comprises exposing the passivation material to a radical etch.5. The method of claim 1 , wherein the forming of the passivation layer comprises: ...

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Номер записи: 85
06-01-2022 дата публикации

NEGATIVE ELECTRODE ACTIVE MATERIAL AND METHOD OF PREPARING THE SAME

Номер: US20220006077A1
Автор: Kim Dong Hyuk, LEE Yong Ju, OH Il Geun, PARK Se Mi
Принадлежит: LG ENERGY SOLUTION, LTD.

A negative electrode active material includes: a silicon based particle; a carbon coating layer formed on a surface of the silicon based particle and including a transition metal; and carbon nanotubes (CNT), wherein one ends of the carbon nanotubes are connected to the transition metal, and a content of the transition metal is 0.03 to 30 parts by weight based on 100 parts by weight of a sum of the carbon coating layer and the carbon nanotubes. 1. A negative electrode active material comprising:a silicon based particle;a carbon coating layer formed on a surface of the silicon based particle and including a transition metal; andcarbon nanotubes (CNT),wherein one ends of the carbon nanotube is connected to the transition metal, and a content of the transition metal is 0.03 to 30 parts by weight based on 100 parts by weight of a total weight of the carbon coating layer and the carbon nanotubes.2. The negative electrode active material according to claim 1 , wherein the one end of the carbon nanotube contacts with the carbon coating layer or is embedded in the carbon coating layer claim 1 , and the other end of the carbon nanotube is positioned outside a surface of the carbon coating layer.3. The negative electrode active material according to claim 1 , wherein the transition metal comprises one or more selected from the group consisting of Cr claim 1 , Mn claim 1 , Fe claim 1 , Co claim 1 , Ni claim 1 , and V.4. The negative electrode active material according to claim 1 , wherein the silicon based particle comprises one or more selected from the group consisting of Si claim 1 , SiO(0 Подробнее

Номер записи: 86
07-01-2016 дата публикации

REVERSE CIRCULATION FLUIDIZED BED REACTOR FOR GRANULAR POLYSILICON PRODUCTION

Номер: US20160002773A1
Автор: Chinn Wenjun L., Fahrenbruck F. Scott, Gum Jeffrey C., Moran Laura E., Skinner Shawn D.
Принадлежит:

A reverse fluidized bed reactor (FBR) is separated by a thermally insulating vertical divider into a pre-reaction heating zone, a reaction zone, and a dehydrogenation zone. The dehydrogenation zone can be distinct, or the heating zone can serve as the dehydrogenation zone. Particles of polysilicon circulate upward through the heating zone and into the top of the reaction zone, where deposition of silicon occurs, and the grown particles slowly settle until they reenter the bottom of the pre-reaction heating zone. Dust formation, wall deposition, and hydrogen content in the product silicon particles are thereby minimized. 1. A method for producing polysilicon , comprising:providing an internally recirculating fluidized bed reactor having at least one vertical separator that creates within the reactor a pre-reaction heating zone, a reaction zone, and a dehydrogenation zone, said zones being in particle communication with each other;introducing polysilicon particles into the reactor;introducing a pre-reaction fluidizing gas into the pre-reaction heating zone, a reaction gas comprising at least one silicon-containing reagent into the reaction zone, and a dehydrogenation gas into the dehydrogenation zone, each of said gases being introduced at a velocity that is at least equal to a minimum fluidizing velocity for the polysilicon particles; the polysilicon particles are heated in the pre-reaction heating zone to a reaction temperature that is above a minimum reaction temperature for the reaction gas;', 'silicon is deposited from the reaction gas onto the polysilicon particles in the reaction zone; and', 'the polysilicon particles are heated in the dehydrogenation zone to a temperature that is sufficient to remove hydrogen gas from the polysilicon particles,, 'controlling the velocities of the gases so as to cause the polysilicon particles to circulate upward through the pre-reaction heating zone, downward through the reaction zone, and through the dehydrogenation zone, ...

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Номер записи: 87
07-01-2016 дата публикации

Decorative, jet-black coating

Номер: US20160002792A1
Автор: Franz Widowitz, Manfred Wurzer, Sebastien Guimond
Принадлежит: Oerlikon Surface Solutions AG Truebbach

A jet-black coating that resists wear; first, at least one DLC layer with a high degree of hardness is applied to a component and then a gradient layer, whose density decreases in the direction toward the surface, is applied to this DLC layer. By means of the refraction index progression that this produces in the gradient layer, the gradient layer functions as a reflection-reducing layer.

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Номер записи: 88
05-01-2017 дата публикации

COMPOSITES COMPRISING NANOSTRUCTURED DIAMOND AND METAL BORIDE FILMS AND METHODS FOR PRODUCING SAME

Номер: US20170002457A1
Автор: Catledge Shane A., Johnston Jamin, Vohra Yogesh K.
Принадлежит:

Composites having a substrate, a diamond film, and a metal boride film disposed between the substrate and the diamond film, together with methods for producing the composites. 1. A composite comprising:a) a substrate;b) a diamond film having a surface roughness of from about 5 nm to about 100 nm; andc) an at least partially continuous metal boride layer disposed between a surface of the substrate and the diamond film.2. The composite of claim 1 , having a hardness of at least about 50 GPa.3. (canceled)4. The composite of claim 1 , wherein the substrate comprises cobalt or an alloy thereof.5. (canceled)6. (canceled)7. The composite of claim 1 , wherein the substrate further comprises one or more of chromium claim 1 , molybdenum claim 1 , tungsten claim 1 , titanium claim 1 , aluminum claim 1 , vanadium claim 1 , nickel claim 1 , iron claim 1 , manganese claim 1 , tungsten carbide claim 1 , carbon claim 1 , or a combination thereof.8. The composite of claim 1 , wherein the substrate comprises a metal carbide alloy.9. The composite of claim 8 , wherein the metal carbide alloy comprises one or more of tungsten carbide claim 8 , titanium carbide claim 8 , or a combination thereof.10. The composite of claim 1 , wherein the diamond film is positioned over at least a portion of the at least partially continuous metal boride layer.11. (canceled)12. The composite of claim 1 , wherein the diamond film is substantially free of a graphitic carbon.13. The composite of claim 1 , wherein the diamond film comprises a nanostructured diamond film.14. (canceled)15. The composite of claim 1 , wherein the diamond film is substantially free of an elemental metal.16. (canceled)17. (canceled)18. The composite of claim 1 , wherein the at least partially continuous metal boride layer comprises cobalt boride.19. (canceled)20. (canceled)21. The composite of claim 1 , wherein the at least partially continuous metal boride layer is conformal to the surface of the substrate.22. The composite of ...

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Номер записи: 89
05-01-2017 дата публикации

Film And Coatings From Nanoscale Graphene Platelets

Номер: US20170002459A1
Автор: KARCH Christian, LENCZOWSKI Blanka, Ostrovsky Ilya
Принадлежит: Airbus Defence and Space GmbH

A composite material includes a magnesium alloy and a layer consisting of nanoscale graphene platelets on at least a part of the surface of the magnesium alloy. A process for manufacturing such a composite material includes providing a magnesium alloy, providing nanoscale graphene platelets and applying the nanoscale graphene platelets to at least a part of the surface of the magnesium alloy. 1. A composite material comprising:a) a magnesium alloy; andb) a layer of nanoscale graphene platelets on at least a part of the magnesium alloy surface.2. The composite material according to claim 1 , wherein the magnesium alloy comprises at least one component selected from the group consisting of yttrium (Y) claim 1 , neodymium (Nd) claim 1 , terbium (Tb) claim 1 , dysprosium (Dy) claim 1 , holmium (Ho) claim 1 , erbium (Er) claim 1 , thulium (Tm) claim 1 , ytterbium (Yb) claim 1 , lutetium (Lu) claim 1 , zirconium (Zr) claim 1 , zinc (Zn) claim 1 , gadolinium (Gd) claim 1 , scandium (Sc) claim 1 , lanthanum (La) claim 1 , cerium (Ce) claim 1 , praseodymium (Pr) claim 1 , promethium (Pm) claim 1 , samarium (Sm) claim 1 , europium (Er) aluminium (Al) claim 1 , calcium (Ca) claim 1 , silicon (Si) claim 1 , manganese (Mn) claim 1 , lithium (Li) claim 1 , silver (Ag) and mixtures thereof as a further alloy component.3. The composite material according to claim 1 , wherein the magnesium alloy comprises magnesium in a quantity from 80 to 98% by weight relative to the total weight of the magnesium alloy.4. The composite material according to claim 1 , wherein the layer of nanoscale graphene platelets is substantially present over the entire surface of the magnesium alloy.5. The composite material according to claim 1 , wherein the layer of nanoscale graphene platelets has a layer thickness from 10 to 1 claim 1 ,000 nm.6. The composite material according to claim 1 , wherein the layer of nanoscale graphene platelets includes multiple layers.7. The composite material according to ...

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Номер записи: 90
05-01-2017 дата публикации

MICROWAVE PLASMA AND ULTRAVIOLET ASSISTED DEPOSITION APPARATUS AND METHOD FOR MATERIAL DEPOSITION USING THE SAME

Номер: US20170002469A1
Автор: Grill Alfred, Nguyen Son V., Priyadarshini Deepika
Принадлежит:

A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided. 1. A method for depositing a material on a substrate , the method comprising:feeding a precursor gas into a processing space in which the substrate is arranged;feeding a reactive gas into the processing space;operating an ultraviolet radiation assembly to emit ultraviolet radiation into the processing space in combination with operating a microwave radiation assembly to emit microwave radiation into the processing space to excite at least the reactive gas; anddepositing the material on the substrate in the processing space from a reaction of the excited reactive gas and the precursor gas.2. The method according to claim 1 , operating a gas feed assembly comprising a plurality of conduits, wherein each of the plurality of conduits comprises a coaxial inner conduit and outer conduit, wherein the inner conduit defines a port through which the precursor gas or the reactive gas is fed into the processing space,', 'wherein the operating the gas feed assembly comprises moving the inner conduit relative to the outer conduit to position the port at a variable position in the processing space ...

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Номер записи: 91
04-01-2018 дата публикации

GROWTH METHOD OF GRAPHENE

Номер: US20180002831A1
Автор: DING GUQIAO, JIANG DA, JIANG MIANHENG, LU GUANGYUAN, TANG SHUJIE, WANG HAOMIN, WU TIANRU, Xie Hong, Xie Xiaoming, ZHANG XUEFU
Принадлежит: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

The present invention provides a growth method of grapheme, which at least comprises the following steps: S providing an insulating substrate, placing the insulating substrate in a growth chamber; S heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like. 1. A growth method of graphene , at least comprising the following steps:{'b': '1', 'S: providing an insulating substrate, placing the insulating substrate in a growth chamber;'}{'b': '2', 'S: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber;'}{'b': '3', 'S: feeding carbon source into the growth chamber, and growing a graphene thin film on the insulating substrate.'}22. The growth method of graphene according to claim 1 , characterized in that: in step S claim 1 , the gas containing catalytic element is a gaseous compound or gaseous elementary substance.32. The growth method of graphene according to claim 1 , characterized in that: in step S claim 1 , outside the growth chamber claim 1 , a solid compound or a solid elementary substance containing the catalytic element is vaporized claim 1 , and the vaporized gas is fed into the growth chamber claim 1 , or claim 1 , a liquid compound or a liquid elementary substance ...

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Номер записи: 92
02-01-2020 дата публикации

Polysilicon manufacturing apparatus

Номер: US20200002808A1
Автор: Hee Dong Lee, Hyo Jin Jeon, Ji Ho Kim, Sung Eun Park
Принадлежит: Hanwha Chemical Corp

A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor in which a reactive gas is introduced to perform a polysilicon manufacturing process by a chemical vapor deposition (CVD) method; and a slit-type nozzle installed at the reactor and spraying a gas inside the reactor to prevent absorption of silicon particles during a process.

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Номер записи: 93
02-01-2020 дата публикации

Film formation method

Номер: US20200002809A1
Автор: Haruhito UCHIDA, Susumu Ozawa, Tatsuyuki Nakatani, Yasuhiro Fujii, Yuichi Imai
Принадлежит: KAKE EDUCATIONAL INSTITUTION, Okayama University NUC, Strawb Inc

A film formation method is provided with a step for disposing a non-electroconductive long thin tube 102 in a chamber 101 in which the internal pressure thereof is adjustable, generating a plasma inside the long thin tube 102 in a state in which a starting material gas including a hydrocarbon is supplied, and forming a diamond-like carbon film on an inner wall surface of the long thin tube 102. The long thin tube 102 is disposed in the chamber 101 in a state in which a discharge electrode 125 is disposed in one end part of the long thin tube 102 and the other end part is open. An alternating-current bias is intermittently applied between the discharge electrode 125 and a counter electrode 126 provided so as to be separated from the long thin tube 102.

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Номер записи: 94
07-01-2021 дата публикации

Diamond-like carbon synthesized by atmospheric plasma

Номер: US20210002759A1
Автор: Jinqiu Zhang, Masahiro Osugi, Xiaobo Huang
Принадлежит: Samu Technology LLC

A system includes a structure including an upper chamber linked to a lower chamber, the upper chamber including a gas inlet configured to enable a gas to enter the upper chamber, the lower chamber including a plasma outlet, a microwave generator configured to deliver a microwave to the upper chamber causing atoms in the gas to ionize to generate a charged particle microwave plasma, a hollow cathode centrally positioned within the lower chamber and an anode surrounding an interior wall of the lower chamber, and a power source for generating power, the power flowing between the anode and the hollow cathode causing atoms in the gas to ionize to generate a charged particle hollow cathode plasma.

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Номер записи: 95
03-01-2019 дата публикации

COMPOSITE MATRIX USING A HYBRID DEPOSITION TECHNIQUE

Номер: US20190003041A1
Автор: Bhattacharya Sumit, Pellin Michael J., Yacout Abdellatif M.
Принадлежит: UCHICAGO ARGONNE, LLC

Provided herein are methods of forming a composite matrix on a porous substrate or a non-porous substrate, the methods including subjecting the substrate to a first deposition method to apply a first coating including first ceramic or metallic particles and form a coated substrate and subjecting the coated substrate to atomic layer deposition to apply a second coating and form the composite matrix, wherein the second coating includes second ceramic or metallic particles. 1. A method of forming a composite matrix on a porous substrate , the method comprising:(a) subjecting the porous substrate to a first deposition method to apply a first coating comprising first ceramic or metallic particles and thereby form a coated substrate; and(b) subjecting the coated substrate to a second deposition method to apply a second coating comprising second ceramic or metallic particles and thereby form the composite matrix, wherein the second deposition method comprises atomic layer deposition (ALD).2. The method of claim 1 , wherein the first deposition method comprises electrophoretic deposition (EPD) claim 1 , chemical vapor infiltration (CVI) claim 1 , physical vapor deposition (PVD) claim 1 , or any combination thereof.3. The method of claim 2 , wherein the first deposition method comprises EPD and step (a) further comprises high pressure infiltration claim 2 , vacuum slurry infiltration claim 2 , or both.4. The method of claim 1 , wherein the porous substrate is a non-conductive substrate and the method further comprises depositing a conductive material on the porous substrate prior to subjecting the porous substrate to the first deposition method claim 1 , and the depositing of the conductive material is optionally via ALD.5. The method of claim 1 , wherein the porous substrate comprises a manufactured open porosity architecture.6. The method of claim 1 , wherein the composite matrix comprises a thickness of at least 1 μm and up to 200 μm.7. The method of claim 1 , wherein the ...

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Номер записи: 96
03-01-2019 дата публикации

GRAPHENE SYNTHESIS

Номер: US20190003042A1
Автор: Han Zhao Jun, Ostrikov Kostyantyn, Pineda Shafique, Seo Dong Han
Принадлежит: Commonwealth Scientific and Industrial Research Organisation

The invention relates to methods for the production of high quality graphene. In particular, the invention relates to single-step thermal methods which can be carried out in an ambient-air or vacuum environment using renewable biomass as a carbon source. Specifically, the invention comprises heating a metal substrate and carbon source in a sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the vapour comes into contact with the metal substrate, maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the substrate at a controlled rate to form a deposited graphene. 1. A method of preparing a deposited graphene comprising the steps of heating a metal substrate and carbon source in a sealed ambient environment to a temperature which produces carbon vapour from the carbon source such that the vapour comes into contact with the metal substrate , maintaining the temperature for a time sufficient to form a graphene lattice and then cooling the substrate at a controlled rate to form a deposited graphene.2. A method according to wherein the deposited graphene is a film.3. A method according to wherein the deposited graphene is a continuous film.4. A method according to any one of the preceding claims wherein the ambient environment is air at atmospheric pressure or a vacuum.5. The method according to any one of the preceding claims wherein the metal substrate is a transition metal substrate.6. The method according to any one of the preceding claims wherein the metal substrate is nickel or copper.7. The method according to wherein the metal substrate is nickel and the ambient environment is air at atmospheric pressure.8. The method according to wherein the metal substrate is nickel of purity 99% and above.9. The method according to wherein the metal substrate is polycrystalline nickel.10. The method according to wherein the metal substrate is copper and the ambient environment is ...

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Номер записи: 97
03-01-2019 дата публикации

THICK OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAMOND MATERIAL WITH LOW BULK ABSORPTION AND LOW MICROFEATURE DENSITY

Номер: US20190003043A1
Автор: Bennett Andrew Michael, WICKHAM BENJAMIN
Принадлежит: ELEMENT SIX TECHNOLOGIES LIMITED

A poly crystalline chemical vapour deposited (CVD) diamond wafer comprising: —a diameter >40 mm; —a thickness >1.0 mm; —an absorption coefficient ≤0.1 cmat 10.6 μm; and ⋅a micro feature density, especially in the form of “black spots”, meeting the following specification: —in a central area of the polycrystalline CVD diamond wafer from 0 to 20 mm radius there are no more than 100 micro features of a size between 0.002 and 0.008 mm, no more than 50 micro features of a size between 0.008 and 0.018 mm, no more than 25 microfeatures of a size between 0.018 and 0.05 mm, and zero microfeatures of a size between 0.05 and 0.1 mm, and ⋅in an outer region of the polycrystalline CVD diamond wafer from 20 to 40 mm radius there are no more than 200 microfeatures of a size between 0.002 and 0.008 mm, no more than 150 microfeatures of a size between 0.008 and 0.018 mm, no more than 100 microfeatures of a size between 0.018 and 0.05 mm, and zero microfeatures of a size between 0.05 and 0.1 mm. 1. A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising:a diameter ≥40 mm;a thickness ≥1.0 mm;{'sup': '−1', 'an absorption coefficient ≤0.1 cmat 10.6 μm; and'}a microfeature density meeting the following specification:{'sup': 2', '2', '2', '2, 'in a central area of the polycrystalline CVD diamond wafer from 0 to 20 mm radius there are no more than 100 microfeatures of a size between 0.002 and 0.008 mm, no more than 50 microfeatures of a size between 0.008 and 0.018 mm, no more than 25 microfeatures of a size between 0.018 and 0.05 mm, and zero microfeatures of a size between 0.05 and 0.1 mm, and'}{'sup': 2', '2', '2', '2, 'in an outer region of the polycrystalline CVD diamond wafer from 20 to 40 mm radius there are no more than 200 microfeatures of a size between 0.002 and 0.008 mm, no more than 150 microfeatures of a size between 0.008 and 0.018 mm, no more than 100 microfeatures of a size between 0.018 and 0.05 mm, and zero microfeatures of a size between 0.05 and 0.1 ...

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Номер записи: 98
04-01-2018 дата публикации

MEMBRANE DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20180003673A1
Автор: Takeda Kenichi, YANAGI Itaru
Принадлежит:

A method for producing a membrane device includes: forming an insulating film as a first film on a Si substrate; forming a Si film as a second film on the entire surface or a part of the first film; forming an insulating film as a third film on the second film; forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film; etching a part of the substrate on one side of the first film with a solution that does not etch the first film; and etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and has an etching rate for the third film lower than an etching rate for the second film. 1. A method for producing a membrane device , comprising:forming an insulating film as a first film on a Si substrate as a substrate;forming a Si film as a second film on the entire surface or a part of the first film;forming an insulating film as a third film on the second film;forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film;etching a part of the substrate on one side of the first film with a solution that does not etch the first film;etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and has an etching rate for the third film lower than an etching rate for the second film, thereby forming a membrane area composed of the first film.2. The method for producing a membrane device according to claim 1 , wherein the membrane area composed of the first film has a thickness of 10 nm or less and 0.3 nm or more.3. The method for producing a membrane device according to claim 1 , wherein the membrane area composed of the first film has a thickness less than 5 nm and 0.3 nm or more.4. The method for producing a membrane device according to claim 1 , wherein the membrane ...

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Номер записи: 99
02-01-2020 дата публикации

Recessed carbon nanotube article and method for making same

Номер: US20200003622A1
Автор: Christopher S. Yung, Daniel R. Schmidt, Nathan A. Tomlin
Принадлежит: US Department of Commerce

A recessed carbon nanotube article includes a base; a substrate disposed on the base; wells disposed in the substrate and bounded by the base and a substrate wall; and a carbon nanotube element disposed in individual wells and including vertically aligned carbon nanotubes such that a longitudinal length of the vertically aligned carbon nanotubes is less than a depth of the well in which the carbon nanotube element is disposed. A recessed carbon nanotube bolometer includes a base; a substrate on the base; radiation wells in the substrate; carbon nanotubes in the wells; thermistors and heaters on the membrane arranged as an electrical substitution member. A process for making a recessed carbon nanotube bolometer includes forming a substrate on a base; forming a radiation well in the substrate; forming carbon nanotubes in the well; disposing a cover on the wells; and forming a thermistor and a heater on the base.

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Номер записи: 100