In-Situ Acoustic Monitoring of Chemical Mechanical Polishing

A method of controlling chemical mechanical polishing includes polishing a substrate having a plurality of protrusions, monitoring the substrate during polishing with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor, and detecting breakage of the protrusions based on the signal. 1. A method of controlling chemical mechanical polishing , comprising:polishing a substrate having a plurality of protrusions;during polishing, monitoring the substrate with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor;detecting breakage of the protrusions based on the signal.2. The method of claim 1 , wherein detecting breakage comprises comparing a signal intensity to a threshold value.3. The method of claim 2 , comprising calculating the signal intensity from a root mean square of the signal4. The method of claim 2 , comprising performing a Fast Fourier Transform on the signal to generate a transformed signal claim 2 , and calculating the signal intensity based on an intensity of a frequency band of the transformed signal.5. The method of claim 2 , comprising performing a wavelet packet transform on the signal to generate a plurality of signal components claim 2 , and calculating the signal intensity based on an intensity of a signal component.6. The method of claim 1 , comprising halting polishing upon detecting breakage of the protrusions.7. The method of claim 1 , wherein detecting breakage of the protrusions triggers reducing a pressure and/or a relative speed of polishing for a subsequent substrate.8. The method of claim 1 , wherein the protrusions comprise stubs of through silicon vias in the substrate.9. A chemical mechanical polishing apparatus claim 1 , comprising:a platen to support a polishing pad;a carrier head to hold a substrate in contact with the ...

OVERPOLISHING BASED ON ELECTROMAGNETIC INDUCTIVE MONITORING OF TRENCH DEPTH

During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate exposed and determine based on the first signal. An initial value of the second signal at the determined clearance time is determined. An offset is added to the initial value to generate a threshold value, and a polishing endpoint is triggered when the second signal crosses the threshold value. 1. A polishing system , comprising:a platen to hold a polishing pad;a carrier head to hold a substrate against the polishing pad during polishing;a first in-situ monitoring system having a first sensor to monitor the substrate during polishing and configured to generate a first signal that depends on clearing of a conductive layer and exposure of a top surface of underlying dielectric layer of the substrate;a second in-situ monitoring system having a separate second sensor to monitor the substrate during polishing and configured to generate a second signal that depends on a thickness of conductive material in trenches in the dielectric layer, the second in-situ monitoring system being an electromagnetic induction monitoring system; and receive the first signal from the first in-situ monitoring system and determine a clearance time at which the conductive layer is cleared based on the first signal,', 'receive the second signal and determine an initial value of the second signal at the determined clearance time,', 'add an offset to the initial value to generate a threshold value, and', 'trigger a polishing endpoint when the second signal crosses the threshold value., 'a controller configured to'}2. The polishing system of claim 1 , wherein the second in-situ monitoring system is configured to induce current in conductive loops disposed in the dielectric layer.3. The polishing system of ...

METHODS AND APPARATUS FOR CLEANING A SUBSTRATE

The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

Method and Apparatus for Silicon Film Deposition

Embodiments of the present invention are directed to apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells. Specifically, embodiments of the invention provide for a pre-heated hydrogen-containing gas to be introduced into a processing chamber separately from the silicon-containing gas. A plasma, struck from the heated hydrogen-containing gas, reacts with the silicon-containing gas to produce a silicon film on a substrate.

Steam treatment stations for chemical mechanical polishing system

An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. 1. An apparatus for chemical mechanical polishing , comprising:a rotatable platen having a surface to support a polishing pad;a carrier head to hold a substrate in contact with the polishing pad; a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and', 'a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface., 'a polishing liquid distribution system, the polishing liquid distribution system including'}2. The apparatus of claim 1 , wherein the first barrier comprises a first solid body to obstruct fluid flow.3. The apparatus of claim 2 , wherein the first barrier is configured to contact the polishing surface in operation.4. The apparatus of claim 2 , wherein the first barrier comprises a first wiper blade.5. The apparatus of claim 2 , wherein a surface of a leading edge of the first solid body is oriented at an acute angle relative to the polishing surface.6. The apparatus of claim 2 , wherein a surface of a leading edge of the first solid body is oriented at a right angle relative to the polishing surface.7. The apparatus of claim 1 , wherein the first barrier comprises gas directed through one or more apertures.8. The apparatus of claim 1 , comprising a first actuator configured to adjust a height of the first barrier relative to and/or a ...

Single wafer dryer and drying methods

In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.

Single wafer dryer and drying methods

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.

Chemical mechanical polishing using time share control

A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

Carrier head with a modified flexible membrane

A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane that applies a load to a substrate and a retaining ring. The friction coefficient of the lower surface of the flexible membrane is increased to prevent contact between the substrate and the retaining ring, thereby preventing slurry compaction and buildup and substrate deformation caused by such contact.

USE OF STEAM FOR PRE-HEATING OF CMP COMPONENTS

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

Temperature Control of Chemical Mechanical Polishing

A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal. 1. A chemical mechanical polishing system , comprising:a support to hold a polishing pad;a carrier head to hold a substrate against the polishing pad during a polishing process;an in-situ monitoring system configured to generate a signal that depends on an amount of material on the substrate;a temperature control system to control a temperature of the polishing process; anda controller coupled to the in-situ monitoring system and the temperature control system, the controller configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.2. The system of wherein the temperature control system includes one or more of an infrared heater to direct heat onto the polishing pad claim 1 , a resistive heater in the support or carrier head claim 1 , a thermoelectric heater or cooler in the support or carrier head claim 1 , a heat exchanger configured to exchange heat with a polishing liquid before the polishing liquid is delivered to the polishing pad claim 1 , or a heat exchanger having a fluid passage in the support.3. The system of claim 1 , wherein the controller is configured to store data indicating a desired temperature of polishing process as a function of the signal claim 1 , and the controller is configured to drive the temperature of the polishing process toward the desired temperature.4. The system of claim ...

STEAM CLEANING OF CMP COMPONENTS

A chemical mechanical polishing system includes a platen to support a polishing pad, a boiler, a component that is movable between a first position spaced from the polishing pad and a second position in contact with the polishing pad, a plurality of nozzles to direct steam from the boiler onto the component of the polishing system when located at the first position, an actuator to move the component from the first position to the second position in contact with the polishing pad, and a controller configured to cause the treatment station to direct the steam onto the component to clean the component, and cause the actuator to move the cleaned component from the treatment station into contact with the polishing pad.

Chemical mechanical polishing with applied magnetic field

A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate-receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

STEAM GENERATION FOR CHEMICAL MECHANICAL POLISHING

A steam generating apparatus includes a canister having a water inlet and a steam outlet. The steam generating apparatus includes a barrier in the canister dividing the canister into a lower chamber and an upper chamber. The lower chamber is positioned to receive water from the water inlet. The steam outlet valve receives steam from the upper chamber. The barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber. The steam generating apparatus includes a heating element configured to apply heat to a portion of lower chamber. The steam generating apparatus includes a controller configured to modify the flow rate of water through the water inlet to keep a water level above the heating element and below the steam outlet. 1. A steam generating apparatus , comprising:a canister having a water inlet and a steam outlet;a barrier in the canister dividing the canister into a lower chamber and an upper chamber, wherein the lower chamber is positioned to receive water from the water inlet, and wherein the steam outlet valve receives steam from the upper chamber, and wherein the barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber;a heating element configured to apply heat to a portion of lower chamber; anda controller configured to modify the flow rate of water through the water inlet to keep a water level above the heating element and below the steam outlet.2. The apparatus of claim 1 , wherein the canister is quartz.3. The apparatus of claim 1 , wherein the barrier is quartz.4. The apparatus of claim 1 , wherein the canister and barrier are coated with a PTFE.5. The apparatus of claim 1 , further comprising a bypass tube connecting the water inlet and the steam outlet in parallel with the canister.6. The apparatus of claim 5 , comprising a water level sensor ...

Method and apparatus for cleaning the edge of a thin disc

An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include de-ionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

TEMPERATURE-BASED IN-SITU EDGE ASSYMETRY CORRECTION DURING CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad. 1. A chemical mechanical polishing apparatus comprising:a platen to hold a polishing pad;a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, the carrier laterally movable by a first actuator across the polishing pad and rotatable by a second actuator;a thermal control system including one or more independently controllable heaters and/or coolers to independently control temperatures of at least one zone of a plurality of zones on the polishing pad relative to another zone of the plurality of zones; anda controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature, the controller further configured to control the first actuator and the second actuator to synchronize lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about the axis of rotation of the carrier head the first angular swath overlies the first zone and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second swath overlies the second zone.2. The apparatus of claim 1 , wherein the ...

USE OF STEAM FOR PRE-HEATING OF CMP COMPONENTS

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad. 1. A method of temperature control for a chemical mechanical polishing system , comprising:while a component in the polishing system is spaced away from a polishing pad of the polishing system, directing a gas that includes steam from an orifice onto the component to raise a temperature of the component to an elevated temperature; andbefore the component returns to an ambient temperature, moving the component into contact with the polishing pad.2. The method of claim 1 , comprising measuring a temperature of the component while the steam is directed onto the component and halting the steam when the component reaches a target temperature.3. The method of claim 2 , comprising measuring a temperature of the polishing pad claim 2 , and calculating the target temperature based on the measured temperature.4. The method of claim 1 , comprising setting a timer and halting the steam at expiration of the timer.5. The method of claim 1 , wherein the temperature of the component is approximately equal to a temperature of the polishing pad when the component is placed into contact with the polishing pad.6. The method of claim 5 , wherein the elevated temperature is greater than the temperature of the polishing pad.7. The method of claim 1 , wherein the gas has a temperature of 70-100° C.8. The method of claim 1 , wherein the steam comprises dry steam.9. The method of claim 1 , wherein the gas consists of steam.10. The method of claim 1 , comprising positioning the component in a treatment station spaced from the polishing pad and directing ...

HOT WATER GENERATION METHOD FOR CHEMICAL MECHANICAL POLISHING

A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head, a motor to generate relative motion between the platen and the carrier head, a steam generator including a vessel having a water inlet and one or more steam outlets and a heating element configured to apply heat to a portion of lower chamber to generate steam, a nozzle oriented to deliver steam from the steam generator onto the polishing pad, a tank to hold a cleaning fluid, a first valve in a first fluid line between the vessel and the nozzle to controllably connect and disconnect the vessel and the nozzle, a second valve in a second fluid line between the vessel and the tank to controllably connect and disconnect the vessel and the tank such that steam from the vessel heats fluid in the tank. 1. A chemical mechanical polishing system , comprising:a platen to support a polishing pad;a carrier head to hold a substrate in contact with the polishing pad;a motor to generate relative motion between the platen and the carrier head;a steam generator including a vessel having a water inlet and one or more steam outlets, and a heating element configured to apply heat to a portion of lower chamber to generate steam;a nozzle oriented to deliver steam from the steam generator onto the polishing pad;a tank to hold a cleaning fluid;a first valve in a first fluid line between the vessel and the nozzle to controllably connect and disconnect the vessel and the nozzle;a second valve in a second fluid line between the vessel and the tank to controllably connect and disconnect the vessel and the tank such that steam from the vessel heats fluid in the tank; anda control system coupled to the first valve and the second valve, the control system configured to cause the first valve and the second valve to open and close.2. The system of claim 1 , further comprising a conditioner head cleaning station to clean a conditioner head claim 1 , and wherein the tank is coupled to the conditioner ...

Two step process for post ash cleaning for Cu/low-k dual damascene structure with metal hard mask

A method and apparatus for removing residue on a wafer is described. A first solution is applied to remove a first type of residue from a metal mask on the wafer. A second solution is applied to remove a second type of residue from the metal mask on the wafer.

Megasonic wafer cleaning tank with reflector for improved wafer edge cleaning

In a first aspect, a first apparatus is provided. The first apparatus includes (1) a tank adapted to contain fluid; (2) at least one support component mounted in the tank and adapted to support a substrate in a supported position at least partially submerged in the fluid; (3) a transducer adapted to output sonic energy into the fluid; and (4) a reflector positioned at a side of the substrate and adapted to reflect the sonic energy toward an edge of the substrate so as to provide a 100% duty cycle. The reflector is positioned such that the reflector does not obstruct a path employed to load the substrate into the supported position and to unload the substrate from the supported position. Numerous other aspects are provided.

Cleaning submicron structures on a semiconductor wafer surface

Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

LOW-TEMPERATURE METAL CMP FOR MINIMIZING DISHING AND CORROSION, AND IMPROVING PAD ASPERITY

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation. 1. A chemical mechanical polishing system , comprising:a platen to support a polishing pad having a polishing surface;a source of coolant;a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; anda controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.2. The system of claim 1 , wherein the source of coolant comprises a source of a liquid coolant medium.3. The system of claim 2 , wherein the liquid coolant medium comprises one or more of liquid nitrogen or water.4. The system of claim 1 , wherein the source of coolant comprises a source of a gas coolant medium.5. The system of claim 4 , wherein the gas coolant medium includes nitrogen or carbon dioxide.6. The system of claim 4 , wherein the source of gas coolant medium includes compressed gas.7. The system of claim 4 , wherein the source of gas coolant medium is connected to a vortex tube configured to direct a cold stream of gas onto the polishing pad.8. The system of claim 1 , wherein the nozzle is configured to start and stop fluid flow through the nozzles.9. The system of claim 1 , wherein the selected step is a conditioning step.10. The system of claim 1 , wherein the selected step is a metal clearing step.11. The system of claim 1 , wherein the selected ...

Steam cleaning of CMP components

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad.

TEMPERATURE AND SLURRY FLOW RATE CONTROL IN CMP

A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

Network camera

Method and apparatus for cleaning the edge of a thin disc

An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include deionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL

A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration. 1. A method for chemical mechanical polishing , the method comprising:rotating a polishing pad about an axis of rotation;positioning a substrate against the polishing pad, the polishing pad having a polishing-control groove that is concentric with the axis of rotation;oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration such that the central portion of the substrate and the edge portion of the substrate are polished for the first duration; andholding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the polishing-control groove for a second duration such that the central portion of the substrate is polished the second duration.2. The method of claim 1 , wherein a ratio of the second duration to the second duration is selected to provide a desired polishing rate for the edge portion.3. The method of claim 1 , wherein the polishing pad further comprises slurry-supply grooves.4. The method of claim 3 , wherein the ...

Temperature control of a substrate during wet processes

Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

APPARATUS AND METHOD FOR CMP TEMPERATURE CONTROL

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Methods and apparatus for forming dual metal interconnects

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

METHODS AND APPARATUS FOR CLEANING A SUBSTRATE

The present invention provides methods, apparatus, and systems for cleaning a substrate that include a controller and a nozzle coupled to the controller. The controller is adapted to direct the nozzle to dispense a uniform fluid spray pattern onto a substrate. The controller is adapted create the uniform fluid spray pattern by adjusting at least one operational parameter of the nozzle to cause a predefined percentage of droplets to be within a predetermined size range. Numerous other aspects are disclosed.

STEAM TREATMENT STATIONS FOR CHEMICAL MECHANICAL POLISHING SYSTEM

An apparatus for steam treatment of a carrier head or a substrate in a chemical mechanical polishing system includes a load cup, a pedestal in a cavity defined by the load cup, the pedestal configured to receive a substrate from or supply a substrate to a carrier head, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into the cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Temperature and slurry flow rate control in CMP

A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

APPARATUS AND METHOD FOR CMP TEMPERATURE CONTROL

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad.

Method and apparatus for cleaning/drying hydrophobic wafers

A hydrophobic wafer is cleaned, rinsed with a low concentration surfactant (e.g., a solution containing approximately 1 to 400 parts per million of surfactant) and then dried (e.g., a via spin drier or an IPA drier). The cleaning rinsing and drying steps may be performed in one or more apparatuses.

Single wafer dryer and drying methods

In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.

CHEMICAL MECHANICAL POLISHING TEMPERATURE SCANNING APPARATUS FOR TEMPERATURE CONTROL

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad. 1. A chemical mechanical polishing apparatus comprising:a platen having a top surface to hold a polishing pad;a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process;a temperature monitoring system including a non-contact thermal sensor positioned above the platen to have a field of view of a portion of the polishing pad on the platen, the sensor rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.2. The apparatus of claim 1 , wherein the thermal sensor is rotatable about an axis parallel to the polishing surface.3. The apparatus of claim 1 , comprising a rotatable sensor support coupled to the motor such that rotation of the support by the motor rotates the sensor.4. The apparatus of claim 3 , wherein the sensor support comprises an arm extending over the polishing pad.5. The apparatus of claim 3 , wherein the sensor support is rotatable about a longitudinal axis of the sensor support.6. The apparatus of claim 3 , wherein the thermal sensor is rotatable about an axis perpendicular to the longitudinal axis of the support.7. The apparatus of claim 3 , wherein the thermal sensor is movable along the support.8. The apparatus of claim 1 , wherein the temperature monitoring system is configured to measure a temperature of the portion of the polishing pad.9. The apparatus of claim 1 , further comprising a controller coupled ...

SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. 1. An apparatus for chemical mechanical polishing , comprising:a rotatable platen having a surface to support a polishing pad;a carrier head to hold a substrate in contact with the polishing pad; and a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad,', 'a first barrier to block polishing liquid on the polishing surface,', 'a first actuator to adjust a height of the first barrier relative to and/or a pressure of the first barrier on the polishing surface,', 'a second barrier to block polishing liquid on the polishing surface, and', 'a second actuator to adjust a height of the second barrier relative to and/or a pressure of the second barrier on the polishing surface., 'a polishing liquid distribution system, the polishing liquid distribution system including'}2. The apparatus of claim 1 , wherein the first barrier comprises a first flexible wiper blade and the second barrier comprises a second wiper blade.3. The apparatus of claim 2 , wherein surfaces of leading edges of the first wiper blade and the second wiper blade are is oriented at an acute angle relative to the polishing surface.4. The apparatus of claim 1 , wherein the first barrier comprises a first rigid body and the second barrier comprises a second rigid body.5. The apparatus of claim 4 , wherein the first right body and the second rigid body each have a flat bottom surface to contact the ...

Cleaning submicron structures on a semiconductor wafer surface

Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus

The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable ...

USE OF A1 BARRIER LAYER TO PRODUCE HIGH HAZE ZNO FILMS ON GLASS SUBSTRATES

Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer. 1. A method of forming a solar cell , comprising:forming a layer comprising alumina on a substrate; andforming a transparent conductive layer on the layer comprising alumina.2. The method of claim 1 , wherein the oxygen in the alumina is sourced claim 1 , at least in part claim 1 , from the substrate.3. The method of claim 1 , wherein forming the layer comprising alumina further comprises:depositing a layer comprising aluminum on a substrate within a processing chamber; andannealing the layer comprising aluminum to form the layer comprising alumina.4. The method of claim 1 , wherein annealing the layer comprising aluminum is performed at about 450° C. in an argon atmosphere for about 5 minutes.5. The method of claim 1 , wherein the layer comprising alumina further comprises a matrix of at least one of the following: aluminum and alumina claim 1 , nano particles in aluminum claim 1 , aluminum nano particles in alumina.6. The method of claim 1 , wherein forming the transparent conductive layer further comprises:forming a zinc oxide-containing transparent conductive seed layer on the layer comprising alumina;performing a break in the process; andforming a zinc oxide-containing transparent conductive bulk layer on ...

METHODS AND APPARATUS USING ENERGIZED FLUIDS TO CLEAN CHEMICAL MECHANICAL PLANARIZATION POLISHING PADS

Methods adapted to clean a chemical mechanical polishing (CMP) pad are disclosed. The methods include positioning an energized fluid delivery assembly over a CMP polishing pad; rotating the polishing pad on a platen; energizing a fluid within the energized fluid delivery assembly; applying the energized fluid to the polishing pad to dislodge slurry residue and debris; and removing the dislodged slurry residue and debris using a vacuum suction unit. Systems and apparatus for carrying out the methods are provided, as are numerous additional aspects. 1. A chemical mechanical polishing (CMP) system comprising:a polishing pad configured to be rotated on a platen;a polishing head configured to hold a substrate against the polishing pad; andan energized fluid delivery assembly configured to apply an energized fluid to the polishing pad to dislodge slurry residue and debris from the polishing pad.2. The CMP system of wherein the energized fluid delivery assembly includes an acoustically energized fluid delivery unit configured to impart acoustic energy to a fluid and to direct the energized fluid toward the polishing pad.3. The CMP system of wherein the energized fluid delivery assembly includes a pressurized gas energized fluid delivery unit configured to impart energy in the form of pressurized gas to a liquid and to direct the energized fluid toward the polishing pad.4. The CMP system of wherein the energized fluid delivery assembly includes a thermally energized fluid delivery unit configured to impart thermal energy to a liquid sufficient to cause the liquid to change state to a gas and to direct the energized fluid toward the polishing pad.5. The CMP system of further including a vacuum suction unit configured to remove slurry residue and debris dislodged by application of the energized fluid to the polishing pad.6. The CMP system of further including a controller operative to monitor the polishing pad to determine if the polishing pad has been cleaned.7. The CMP ...

SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid. 1. An apparatus for chemical mechanical polishing , comprising:a rotatable platen having a surface to support a polishing pad;a carrier head to hold a substrate in contact with the polishing pad; and a dispenser positioned to deliver a polishing liquid at a dispensing position onto a polishing surface of the polishing pad, and', 'a first barrier including a first solid body having a first leading surface and a first flat bottom surface, the first flat bottom surface positioned to contact the polishing surface, the first barrier located after the dispensing position to spread fresh polishing liquid delivered by the dispenser onto the polishing surface, and wherein the first leading surface of the first barrier curves about an axis perpendicular to the polishing surface., 'a polishing liquid distribution system, the polishing liquid distribution system including'}2. The apparatus of claim 1 , comprising a first actuator configured to adjust a height of the first barrier relative to and/or a pressure of the first barrier on the polishing surface.3. The apparatus of claim 1 , wherein the platen is configured to rotate to provide a direction of motion below the first barrier claim 1 , and the first leading surface of the first barrier is curved such ...

METHOD AND APPARATUS FOR SINGLE-SUBSTRATE CLEANING

A single-substrate cleaning apparatus and method of use are described. In an embodiment of the present invention, a liquid cleaning solution is dispensed in small volumes to form a substantially uniform static liquid layer over a substrate surface by atomizing the viscous liquid with an inert gas in a two-phase nozzle. In another embodiment of the present invention, after a layer of the cleaning solution is formed over the substrate to be cleaned, acoustic energy is applied to the substrate to improve the cleaning efficiency. In a further embodiment, cleaning solution precipitates are avoided by dispensing de-ionized water with a spray nozzle to gradually dilute the cleaning solution prior to dispensing de-ionized water with a stream nozzle.

Temperature control of a substrate during wet processes

Embodiments of the invention provide methods of applying a liquid to a backside of a substrate to bring the substrate to the temperature of the liquid. By controlling the temperature of the substrate the temperature of the semiconductor processing liquid may be maintained at a particular temperature or a type of reaction occurring in the semiconductor processing liquid may be enhanced or maintained, such as in reactions where relatively small amounts of liquid are used or expensive chemicals are used.

Temperature-based in-situ edge assymetry correction during CMP

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

Single wafer dryer and drying methods

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

CRYOGENIC LIQUID CLEANING APPARATUS AND METHODS

A cryogenic cleaning apparatus is disclosed. The cryogenic cleaning apparatus has a source of cryogen, a nozzle coupled to the source of cryogen, the nozzle including a main passage adapted to receive the cryogen, one or more auxiliary gas inlets adapted to supply an auxiliary gas to mix with the cryogen either within the nozzle or at a nozzle exit of the nozzle to produce cryogen droplets, and a heated holder adapted to receive a substrate to be cleaned. Cryogenic cleaning methods adapted to clean substrates are provided, as are numerous other aspects. 1. A cryogenic cleaning apparatus , comprising:a source of cryogen adapted to deliver a cryogen;a nozzle coupled to the source of cryogen, the nozzle including a main passage adapted to receive the cryogen and one or more auxiliary gas inlets adapted to supply an auxiliary gas from an auxiliary gas source and to mix with the cryogen either within the nozzle or at a nozzle exit of the nozzle; anda heated holder adapted to receive a substrate to be cleaned.2. The cryogenic cleaning apparatus of claim 1 , comprising an auxiliary gas inlet.3. The cryogenic cleaning apparatus of claim 1 , wherein the one or more auxiliary gas inlets are coupled to one or more auxiliary gas outlets that surround a nozzle exit.4. The cryogenic cleaning apparatus of claim 1 , wherein the one or more auxiliary gas inlets are coupled into the main passage.5. The cryogenic cleaning apparatus of claim 1 , wherein the heated holder is coupled to a heat source.6. The cryogenic cleaning apparatus of claim 5 , wherein the heat source is controllable.7. The cryogenic cleaning apparatus of claim 1 , wherein the cleaning apparatus is devoid of a vacuum chamber.8. The cryogenic cleaning apparatus of claim 1 , wherein the auxiliary gas comprises N claim 1 , He claim 1 , or Ar.9. The cryogenic cleaning apparatus of claim 1 , wherein the cryogen comprises N claim 1 , Ar claim 1 , or CO.10. A method of cleaning a substrate claim 1 , comprising:providing a ...

Overpolishing based on electromagnetic inductive monitoring of trench depth

During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate exposed and determine based on the first signal. An initial value of the second signal at the determined clearance time is determined. An offset is added to the initial value to generate a threshold value, and a polishing endpoint is triggered when the second signal crosses the threshold value.

Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus

The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable ...

IN-SITU CONDITIONER DISK CLEANING DURING CMP

A polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against the polishing pad, a conditioner including a conditioner head to hold a conditioner disk against the polishing pad, a motor to move the conditioner head laterally movable relative to the platen, a conditioning disk cleaning station positioned adjacent the platen to clean the conditioning disk, and a controller configured to cause the motor to, during polishing of the substrate, move the conditioner head back and forth between a first position with the conditioner head over the polishing pad and a second position with the conditioner head in the conditioner disk cleaning station.

SINGLE WAFER DRYER AND DRYING METHODS

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Semiconductor wafer chemical-mechanical planarization process monitoring and end-point detection method and apparatus

The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad, can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad, for example, can be effected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.

Chemical mechanical polishing temperature scanning apparatus for temperature control

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

WAFER EDGE ASYMMETRY CORRECTION USING GROOVE IN POLISHING PAD

A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove. 1. A chemical mechanical polishing system comprising:a rotatable platen to hold a polishing pad, the platen rotatable by a motor, the polishing pad having a polishing surface and a polishing control groove concentric with an axis of rotation for the polishing pad;a rotatable carrier head to hold a substrate against the polishing surface of the polishing pad during a polishing process, the carrier laterally movable by a first actuator across the polishing pad and rotatable by a second actuator;a controller configured to control the first actuator and the second actuator to synchronize lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the ...

Slurry distribution device for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface. The first barrier includes a solid first body having a first flat bottom surface and having a first leading surface configured to contact the used polishing liquid.

POINT-OF-USE ULTRASONIC HOMOGENIZER FOR CMP SLURRY AGGLOMERATION REDUCTION

Exemplary slurry delivery assemblies may include a slurry fluid source. The assemblies may include a flurry delivery lumen having a lumen inlet and a lumen outlet. The lumen inlet may be fluidly coupled with an output of the slurry fluid source. The assemblies may include a deagglomeration tube fluidly coupled with the lumen outlet. The deagglomeration tube may include a tube inlet and a tube outlet. The assemblies may include one or more ultrasonic transducers coupled with the deagglomeration tube.

Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Steam-assisted single substrate cleaning process and apparatus

The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

SYSTEMS, METHODS AND APPARATUS FOR POST-CHEMICAL MECHANICAL PLANARIZATION SUBSTRATE BUFF PRE-CLEANING

In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Method and apparatus for active particle and contaminant removal in wet clean processes in semiconductor manufacturing

An apparatus and a method for cleaning a wafer are described. A chamber has a substrate support. A nozzle is disposed above the substrate support to spray de-ionized water droplets. The nozzle is coupled to a source of de-ionized water and a source of nitrogen. The nozzle is configured to mix the de-ionized water and the nitrogen outside the nozzle to have independent flow rate control of the two fluids for an optimized atomization in terms of spray uniformity in droplet size and velocity distributions. The nozzle to wafer distance can be adjusted and tuned to have an optimized jet spray for efficiently removing particles or contaminants from a surface of a wafer without causing any feature damage.

Apparatus and method of substrate edge cleaning and substrate carrier head gap cleaning

The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.

Continuous cleaning megasonic tank with reduced duty cycle transducers

A sonic tank for cleaning substrates is provided. The tank has two or more upwardly angled walls. Arrays of one or more transducers are positioned along at least two of the two or more angled walls. The transducer arrays are alternately energized maintaining nearly 100% substrate surface cleaning at any given time, and 50% duty cycle (or less) for each transducer array. The substrate supports are positioned such that nearly every point along the substrate's surface is contacted by energy from at least one transducer, and transducer opposing walls are positioned to avoid interfering reflections therefrom.

Temperature-based assymetry correction during CMP and nozzle for media dispensing

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

Acoustic Emission Monitoring and Endpoint for Chemical Mechanical Polishing

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and an in-situ acoustic emission monitoring system including an acoustic emission sensor supported by the platen, a waveguide configured to extending through at least a portion of the polishing pad, and a processor to receive a signal from the acoustic emission sensor. The in-situ acoustic emission monitoring system is configured to detect acoustic events caused by deformation of the substrate and transmitted through the waveguide, and the processor is configured to determine a polishing endpoint based on the signal.

Single wafer dryer and drying methods

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Megasonic wafer cleaning tank with reflector for improved wafer edge cleaning

In a first aspect, a first apparatus is provided. The first apparatus includes (1) a tank adapted to contain fluid; (2) at least one support component mounted in the tank and adapted to support a substrate in a supported position at least partially submerged in the fluid; (3) a transducer adapted to output sonic energy into the fluid; and (4) a reflector positioned at a side of the substrate and adapted to reflect the sonic energy toward an edge of the substrate so as to provide a 100% duty cycle. The reflector is positioned such that the reflector does not obstruct a path employed to load the substrate into the supported position and to unload the substrate from the supported position. Numerous other aspects are provided.

Temperature Control of Chemical Mechanical Polishing

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system. The temperature control system includes a plurality of thermal control modules positioned above the polishing pad at a plurality of different radial positions to heat or cool a plurality of regions of the polishing pad. Each thermal control module is configured to independently heat or cool a radial region of the polishing pad. 1. A chemical mechanical polishing apparatus comprising:a platen to hold a polishing pad;a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process; anda temperature control system including a plurality of thermal control modules positioned above the polishing pad at a plurality of different radial positions to heat or cool a plurality of regions of the polishing pad, wherein each thermal control module of the plurality of thermal control modules is configured to independently heat or cool a radial region of the polishing pad.2. The apparatus of claim 1 , wherein the plurality of thermal control modules are positioned in a line.3. The apparatus of claim 2 , wherein the platen is rotatable about an axis claim 2 , and the plurality of thermal control modules are positioned along a radius of the platen.4. The apparatus of claim 1 , wherein the plurality of regions have a same shape.5. The apparatus of claim 1 , wherein the plurality of thermal control modules are supported by a linearly extending arm of substantially uniform width.6. The apparatus of claim 1 , wherein the plurality of regions have different shapes.7. The apparatus of claim 6 , wherein the platen is rotatable about an axis claim 6 , and regions further from the axis are larger than regions closer to the axis.8. The apparatus of claim 7 , wherein ...

APPARATUS AND METHOD OF SUBSTRATE EDGE CLEANING AND SUBSTRATE CARRIER HEAD GAP CLEANING

The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface. 1. A load cup comprising:an annular substrate station configured to receive a substrate; anda nebulizer located within the load cup and surrounded by the annular substrate station, the nebulizer comprising a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer, wherein the set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.2. The load cup of claim 1 , further comprising a set of spray nozzles configured to deliver a spray of fluid claim 1 , wherein each respective spray nozzle is disposed proximate to each respective energized fluid nozzle.3. The load cup of claim 2 , wherein the energized fluid is steam and the spray of fluid is deionized (DI) water.4. The load cup of claim 2 , wherein each of the energized fluid nozzles are configured direct fluid in a flat fan jet claim 2 , wherein a flat portion of the flat fan jet is substantially parallel with an inner perimeter of the annular substrate station claim 2 , wherein a jet angle pivoting at a tip of the energized fluid nozzle from a first edge to a second edge of the flat fan jet is about 30 degrees to about 50 degrees.5. The load cup of claim 2 , wherein each of the set of spray nozzles are coupled to atomizers such that fluid from the spray nozzles is in a mist form.6. The load cup of claim 1 , wherein the upward angle of the energized ...

SLURRY TEMPERATURE CONTROL BY MIXING AT DISPENSING

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of a heating fluid, a reservoir to hold a polishing liquid, and a dispenser having one or more apertures suspended over the platen to direct the polishing liquid onto the polishing surface, wherein the source of the heating fluid is coupled to the dispenser and configured to deliver the heating fluid into the polishing liquid to heat the polishing liquid after the polishing liquid leaves the reservoir and before the polishing liquid is dispensed onto the polishing surface. 1. A chemical mechanical polishing system , comprising:a platen to support a polishing pad having a polishing surface;a source of a heating fluid;a reservoir to hold a polishing liquid; anda dispenser having one or more apertures suspended over the platen to direct the polishing liquid onto the polishing surface,wherein the source of the heating fluid is coupled to the dispenser and configured to deliver the heating fluid into the polishing liquid to heat the polishing liquid after the polishing liquid leaves the reservoir and before the polishing liquid is dispensed onto the polishing surface.2. The system of claim 1 , wherein the heating fluid comprises one or more of water claim 1 , de-ionized water claim 1 , or water that includes additives or chemicals.3. The system of claim 1 , wherein the source of heating fluid comprises a steam generator and the heating fluid comprises steam.4. The system of claim 3 , comprising a controller coupled to a power source for the steam generator and configured to cause the steam generator to heat the steam to 40-120° C.5. The system of claim 1 , wherein the source of heating fluid is coupled to the dispenser in a dispenser arm that extends over the platen so as to deliver heating fluid into the polishing liquid in the dispenser arm.6. The system of claim 5 , wherein the source of heating fluid is coupled to the dispenser in a mixing chamber ...

Use of steam for pre-heating of CMP components

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

SINGLE WAFER DRYER AND DRYING METHODS

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Chemical Mechanical Polishing With Die-Based Modification

A method of processing a substrate includes selectively dispensing a treatment fluid on a die-by-die basis to onto a substrate, and chemical mechanical polishing the substrate after dispensing the treatment fluid. The treatment fluid modifies a polishing rate of the chemical mechanical polishing at one or more selected die(s) to which the treatment fluid is applied in comparison to one or more remaining die(s) to which the treatment fluid is not applied. 1. A method of processing a substrate , comprising:selectively dispensing a treatment fluid on a die-by-die basis to onto a substrate; andchemical mechanical polishing the substrate after dispensing the treatment fluid, wherein the treatment fluid modifies a polishing rate of the chemical mechanical polishing at one or more selected die(s) to which the treatment fluid is applied in comparison to one or more remaining die(s) to which the treatment fluid is not applied.2. The method of claim 1 , wherein selectively dispensing the treatment fluid comprises one or more of ejection droplet printing claim 1 , spin-on coating claim 1 , spray-on claim 1 , or screen printing.3. The method of claim 2 , wherein selectively dispensing comprises flowing the treatment fluid through a mask.4. The method of claim 2 , wherein selectively dispensing comprises selectively ejecting droplets of the treatment fluid onto the substrate.5. The method of claim 2 , wherein selectively dispensing comprises disposing the treatment fluid across all of the dies on the substrate and curing the treatment fluid at the one or more selected die(s).6. The method of claim 1 , further comprising curing the treatment fluid before chemical mechanical polishing the substrate.7. The method of claim 1 , comprising forming the treatment fluid into a protective film that reduces the polishing rate at the selected die(s) relative to the remaining die(s).8. The method of claim 1 , wherein the treatment fluid damages a layer to be polished so as to increase the ...

Slurry distribution device for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.

Slurry distribution device for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.

STEAM CLEANING OF CMP COMPONENTS

A method of cleaning for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto a component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component, and moving the component into contact with the polishing pad. 1. A method of cleaning for a chemical mechanical polishing system , comprising:while a component in the polishing system is spaced away from a polishing pad of the polishing system, directing a gas that includes steam from an orifice onto the component to clean polishing by-product off the component; andmoving the cleaned component into contact with the polishing pad.2. The method of claim 1 , comprising setting a timer and halting the steam at expiration of the timer.3. The method of claim 1 , wherein the gas has a temperature of 70-100° C.4. The method of claim 3 , wherein the gas has a temperature of 80-100° C.5. The method of claim 1 , wherein the steam comprises dry steam.6. The method of claim 1 , wherein the gas consists of steam.7. The method of claim 1 , wherein the gas comprises a mixture of steam and atmosphere.8. The method of claim 1 , comprising positioning the component in a treatment station spaced from the polishing pad and directing steam onto the component at the treatment station.9. The method of claim 8 , comprising rotating the component in the treatment station as steam is directed onto the component.10. The method of claim 8 , comprising vertically moving the component in the treatment station as steam is directed onto the component.11. The method of claim 1 , wherein the component comprises a carrier head or a substrate to be polished.12. The method of claim 11 , wherein the steam is directed onto the component at a substrate transfer station.13. The method of claim 12 , wherein the steam is directed onto the component at an inter-platen station.14. The method of claim 1 , wherein the component comprises a ...

MONITORING OF ACOUSTIC EVENTS ON A SUBSTRATE

A chemical mechanical polishing apparatus, including a platen supporting a polishing pad; a carrier head to hold a surface of a substrate against the polishing pad; a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate; an array of acoustic sensors arranged within the carrier head to receive acoustic signals from the surface of the substrate; and a controller configured to detect a position of an acoustic event on the surface of the substrate based on received acoustic signals from the array of acoustic sensors.

Acoustic emission monitoring and endpoint for chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and an in-situ acoustic emission monitoring system including an acoustic emission sensor supported by the platen, a waveguide configured to extending through at least a portion of the polishing pad, and a processor to receive a signal from the acoustic emission sensor. The in-situ acoustic emission monitoring system is configured to detect acoustic events caused by deformation of the substrate and transmitted through the waveguide, and the processor is configured to determine a polishing endpoint based on the signal.

METHOD AND APPARATUS FOR ACTIVE PARTICLE AND CONTAMINANT REMOVAL IN WET CLEAN PROCESSES IN SEMICONDUCTOR MANUFACTURING

An apparatus and a method for cleaning a wafer are described. A chamber has a substrate support. A nozzle is disposed above the substrate support to spray de-ionized water droplets. The nozzle is coupled to a source of de-ionized water and a source of nitrogen. The nozzle is configured to mix the de-ionized water and the nitrogen outside the nozzle to have independent flow rate control of the two fluids for an optimized atomization in terms of spray uniformity in droplet size and velocity distributions. The nozzle to wafer distance can be adjusted and tuned to have an optimized jet spray for efficiently removing particles or contaminants from a surface of a wafer without causing any feature damage.

Frontside structure damage protected megasonics clean

An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Semiconductor substrate cleaning apparatus

A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.

METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION

An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region. 1. A method for depositing a silicon-containing film , comprising:generating hydrogen radicals remotely from a processing chamber;introducing a flow of the hydrogen radicals into a processing region of the processing chamber, wherein a substrate is positioned in the processing region; andintroducing a flow of silicon-containing gas into the processing region of the processing chamber, wherein the hydrogen radicals are not mixed with the silicon-containing gas prior to reaching the processing region of the processing chamber.2. The method of claim 1 , further comprising delivering a flow of argon plasma with the hydrogen radicals to the processing region.3. The method of claim 1 , wherein the hydrogen radicals are generated in a remote plasma source.4. The method of claim 3 , further comprising delivering the hydrogen radicals from the remote plasma source to the processing chamber via line of sight tubing comprising an inert material.5. The method of claim 4 , further comprising heating the line of sight tubing during the delivering the hydrogen radicals from the remote plasma source to the processing chamber.6. The method of claim 4 , wherein the processing region is defined by a substrate support claim 4 , a showerhead claim 4 , and walls of the processing chamber.7. The method of claim 6 , further comprising delivering the silicon- ...

CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL

A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

Temperature Control of Chemical Mechanical Polishing

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad. 1. A chemical mechanical polishing apparatus comprising:a platen to hold a polishing pad;a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process;a dispenser to supply a polishing liquid to the polishing surface; anda temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface, the body supporting a thermal control module positioned over the polishing pad.2. The apparatus of claim 1 , wherein the body comprises a linear arm of substantially uniform width.3. The apparatus of claim 1 , wherein the body comprises a wedge-shaped arm.4. The apparatus of claim 1 , wherein a portion of the body is positioned between the thermal control module and the polishing pad or the polishing liquid.5. The apparatus of claim 1 , wherein the thermal control module directly contacts the polishing pad or the polishing liquid.6. The apparatus of claim 1 , wherein at least a portion of the body that contacts the polishing pad or polishing liquid comprises a ceramic.7. The apparatus of claim 6 , wherein the body is ceramic.8. The apparatus of claim 6 , wherein the portion of the body comprises a coating of ceramic on another material.9. The apparatus of claim 1 , wherein at least a portion of the body that contacts the polishing pad or polishing liquid comprises silicon carbide claim 1 , silicon nitride aluminum nitride claim 1 , diamond or diamond-like carbon.10. The apparatus of claim 1 , ...

STEAM TREATMENT STATIONS FOR CHEMICAL MECHANICAL POLISHING SYSTEM

An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Frontside structure damage protected megasonics clean

An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

TEMPERATURE-BASED ASSYMETRY CORRECTION DURING CMP AND NOZZLE FOR MEDIA DISPENSING

A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface. 1. A chemical mechanical polishing apparatus comprising:a rotatable platen to hold a polishing pad;a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process;a polishing liquid supply port to supply a polishing liquid to the polishing surface;a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface;an actuator to move the nozzle radially relative to an axis of rotation of the platen; anda controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.2. The apparatus of claim 1 , wherein the controller is configured to coordinate dispensing of the medium so as to reduce asymmetrical polishing of the substrate.3. The apparatus of claim 1 , wherein the thermal control system comprises a heater and the medium is a heated gas.4. The apparatus of claim 1 , wherein the thermal control system comprises a cooler and the medium is a cooled liquid.5. The apparatus of claim 1 , wherein the nozzle is suspended from an arm and the arm is supported by a rotatable base so as to pivot the arm over the polishing surface.6. The apparatus of claim 1 , wherein the nozzle is suspended from an arm ...

Single wafer dryer and drying methods

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluidnozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Method and apparatus for cleaning the edge of a thin disc

An inventive edge cleaning device is provided for cleaning the edge a thin disc such as a semiconductor wafer. The inventive edge cleaning device has a sonic nozzle positioned so as to direct a liquid jet at the edge surface of the thin disc. Preferably the sonic nozzle is radially spaced from the thin disc's edge so that scrubbing, spin rinsing or spin cleaning may be simultaneously performed on the major surfaces of the thin disc as the thin disc edge is cleaned by the sonic nozzle. The liquid jet may include deionized water, NH4OH, KOH, TMAH, HF, citric acid, a surfactant, or other similar cleaning solutions, and the nozzle may remain stationary as the thin disc rotates or the nozzle may scan the circumference of the thin disc to clean the entire edge of the thin disc.

Megasonic resonator for disk cleaning and method for use thereof

A Megasonic cleaning apparatus having at least one reflector (e.g., a parabolic or paraboloid reflector) positioned to collect otherwise wasted cleaning energy and redirect that energy to one or a plurality of positions on a wafer's edge is provided. A first embodiment comprises a complex parabolic reflector which has a width greater than that of the wafer and a preferred length approximately equal to the diameter of the wafer, and which is shaped to provide focal points which vary along the length of the parabolic reflector, such that energy striking the reflector at different points along the reflector's length is directed to a plurality of different points along the wafer's edge. A second embodiment comprises a simple parabolic reflector having a width greater than that of the wafer and a preferred length less than the diameter of the wafer, and which is provided to focus at a cord along the wafer's surface, effectively focusing cleaning energy on two points along the wafer's edge at ...

APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING

A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects. 1. A platen for a chemical mechanical polishing (CMP) apparatus , comprising:a disk-shaped base configured to receive a polishing pad on a surface thereof, the disk-shaped base having at least one through-hole; andan acoustic sensor received in the at least one through-hole and protruding from the surface of the disk-shaped base, the acoustic sensor configured to be electrically coupled to a controller.2. The platen of further comprising a polishing pad mounted to the disk-shaped base claim 1 , the polishing pad having a non-through hole on a base-side surface of the polishing pad configured to receive the acoustic sensor therein.3. The platen of wherein the at least one through-hole is positioned at about the center claim 1 , or about 5 inches (about 12.7 cm) radially outward from the center claim 1 , or about 10 inches (about 25.4 cm) radially outward from the center of the disk-shaped base.4. The platen of wherein the acoustic sensor protrudes from the surface of the disk-shaped base by about 50 mils (about 1.27 mm).5. Chemical mechanical polishing (CMP) apparatus configured to perform a CMP process claim 1 , comprising:a platen comprising a polishing pad;a substrate holder configured to hold a substrate to be polished, ...

Apparatus and Method for CMP Temperature Control

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad. 1. A chemical mechanical polishing apparatus comprising:a platen to hold a polishing pad;a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process; anda temperature control system including a source of heated fluid and a plurality of openings positioned over the platen and separated from the polishing pad and configured for the heated fluid to flow onto the polishing pad.2. The apparatus of claim 1 , wherein the heated fluid comprises a gas.3. The apparatus of claim 2 , wherein the gas comprises steam.4. The apparatus of claim 1 , wherein the temperature control system comprises an arm extending over the platen claim 1 , the arm supported by a base off to a side of the platen.5. The apparatus of claim 1 , wherein the openings are disposed such that fluid is dispensed in zones that overlap along a radial axis of the platen.6. The apparatus of claim 1 , wherein the openings are disposed with a non-uniform density along a radial axis of the platen.7. The apparatus of claim 1 , further comprising a slurry dispensing port.8. The apparatus of claim 7 , and wherein the openings are disposed at a greater density at a radial zone corresponding to a radial position of the slurry dispensing port.9. The apparatus of claim 1 , wherein at least one of the opening is configured such that a central axis of spray from that opening is at an oblique angle relative to the polishing surface.10. The apparatus of claim 9 , wherein the at least one of the openings is configured such that the headed ...

SINGLE WAFER DRYER AND DRYING METHODS

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

METHODS AND APPARATUS FOR FORMING DUAL METAL INTERCONNECTS

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material. 1. A method for creating a dual metal interconnect , comprising:depositing a first liner of a first nitride material into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms, wherein X is a feature width greater than zero and less than or equal to approximately 17 nm;depositing a second liner of a first metal material into the at least one 1× feature and at least one wider than 1× feature;reflowing the first metal material such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material;depositing a second metal material on the first metal material; andreflowing the second metal material such that the at least one wider than 1× feature is filled with the second metal material.2. The method of claim 1 , further comprisingpolishing the second metal material;polishing the first metal material and the second metal material with an electro-chemical balanced' solution for dual metal polishing; andover polishing the first metal material and the second ...

Two step process for post ash cleaning for cu/low-k dual damascene structure with metal hard mask

A method and apparatus for removing residue on a wafer is described. A first solution is applied to remove a first type of residue from a metal mask on the wafer. A second solution is applied to remove a second type of residue from the metal mask on the wafer.

Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning

In some embodiments, an apparatus for cleaning a substrate is provided that includes (1) a substrate chuck configured to support a substrate with a front side of the substrate accessible; (2) a buff pad assembly configured to support a buff pad having a diameter smaller than a diameter of the substrate; and (3) a swing arm coupled to the buff pad and configured to position and rotate the buff pad along the front side of the substrate, and control an amount of force applied by the buff pad against the front side of the substrate during cleaning. The substrate chuck, buff pad assembly and swing arm are configured to buff clean the substrate. Numerous additional aspects are disclosed.

Method and apparatus for cleaning the edge of a thin disc

A method and apparatus for cleaning wafer edges is provided. The inventive wafer cleaner employs a transducer equal in length to the diameter of a wafer to be cleaned, and positioned to direct sonic energy in line with the wafer's edge. Supporting and rotating mechanisms are positioned along the wafer's edge, outside of the transducer's high energy field, and preferably such that approximately 50 percent of the wafer is positioned between the wafer supports and the transducer. Therefore, minimal sonic energy is blocked from reaching the wafer's surface. The transducer dimensions relative to the wafer, and the positioning of the wafer supports relative to the transducer enable the system to achieve an approximately 50 percent edge cleaning duty cycle as the wafer is rotated.

Methods and apparatus for forming dual metal interconnects

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Temperature control for chemical mechanical polishing

【課題】研磨動作中に基板上の材料のディッシングおよび浸食を制御または制限する。【解決手段】化学機械研磨システム１０は、研磨パッド１４を保持するための支持体と、研磨プロセス中に研磨パッド１４に対して基板１６を保持するためのキャリアヘッド３６と、基板１６上の材料の量を示す信号を生成するように構成されたインシトゥモニタシステム６６と、研磨プロセスの温度を制御するための温度制御システム１００と、インシトゥモニタシステム６６および温度制御システム１００に接続されたコントローラ１０２とを含む。コントローラ１０２は、温度制御システム１００に、信号に応じて研磨プロセスの温度を変更させるように構成される。【選択図】図１

Method and apparatus for cleaning the edge of a thin disc

A nucleation promotion layer formed on a substrate to enhance deposition of a transparent conductive layer

Methods for forming a nucleation promotion layer prior to formation of a transparent conductive layer suitable for use in PV cells are provided. In one embodiment, the method includes forming a seed layer on a substrate by materials sputtered from a first target disposed in a reactive sputter processing chamber, and forming a transparent conductive layer on the seed layer by materials sputtered from a second target disposed in the reactive sputter processing chamber, wherein the first and the second target are fabricated by a containing material having dopants formed therein and dopant concentration formed in the first target is higher than the dopant concentration formed in the second target.

Methods and apparatus for cleaning a substrate

Use of al barrier layer to produce high haze zno films on glass substrates

Embodiments of the invention provide a method for forming a solar cell including forming a layer comprising alumina on a substrate and forming a transparent conductive layer on the layer comprising alumina. The method may also include forming a transparent conductive seed layer on the layer comprising alumina and forming a transparent conductive bulk layer on the transparent conductive seed layer. Embodiments of the invention also include photovoltaic devices having a substrate, a layer comprising alumina adjacent to the substrate, a zinc oxide-containing transparent conductive seed layer adjacent to the layer comprising alumina, and a zinc oxide-containing transparent conductive bulk layer adjacent the zinc oxide-containing transparent conductive seed layer.

Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing

A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects.

Pad surface cleaning device around pad conditioner to enable insitu pad conditioning

The present disclosure relates to a pad surface cleaning system to be used with a conditioning module to condition a polishing surface of a polishing pad The pad surface cleaning system may be used to spray the polishing surface with a high- pressure fluid spray to loosen debris from the polishing surface. The pad surface cleaning system may also be used to remove the loosened debris. Further, the pad surface cleaning system may isolate a conditioning disk from a polishing fluid to protect the conditioning disk from reacting with the polishing fluid.

Steam-assisted single substrate cleaning process and apparatus

The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

Chemical mechanical polishing using time share control

A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Temperature and slurry flow rate control in cmp

A chemical mechanical polishing system includes a polishing a port to dispense polishing liquid onto a polishing pad and a liquid flow controller to control a flow rate of the polishing liquid to the port, a temperature control system to control a temperature of the polishing pad, and a control system. The control system is configured to obtain a baseline removal rate, a baseline temperature and a baseline polishing liquid flow rate. A function is stored relating removal rate to polishing liquid flow rate and temperature. The function is used to determine a reduced polishing liquid flow rate and an adjusted temperature such that a resulting removal rate is not below the baseline removal rate. The liquid flow controller is controlled to dispense the polishing liquid at the reduced polishing liquid flow rate and control the temperature control system so that the polishing process reaches the adjusted temperature.

Chemical mechanical polishing temperature scanning apparatus for temperature control

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

研磨パッドの溝を使用した、ウェハ縁部の非対称性の補正

【課題】基板全体の研磨レートの不均一性を低減する化学機械研磨システムを提供する。【解決手段】化学機械研磨システムは、研磨パッドを保持するためのプラテン、研磨パッドの研磨面に対して基板を保持するためのキャリアヘッド、およびコントローラを含む。研磨パッドは、研磨制御溝を有する。キャリアは、研磨パッドを横切って第１のアクチュエータによって横方向に移動可能であり、第２のアクチュエータによって回転可能である。コントローラは、キャリアヘッドの複数の連続する振動にわたって、基板の縁部分の第１の角度スワスがキャリアヘッドの回転軸の周りのある方位角位置にあるとき、第１の角度スワスは研磨面の上にあり、基板の縁部分の第２の角度スワスがその方位角位置にあるとき、第２の角度スワスは研磨制御溝の上にあるように、キャリアヘッドの横方向振動をキャリアヘッドの回転と同期させる。【選択図】図６Ａ

Wafer edge asymmetry correction using groove in polishing pad

A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

Wafer edge asymmetry correction using groove in polishing pad

A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

化学機械研磨のための水蒸気生成

【課題】本開示は、化学機械研磨中の洗浄又は予熱のための水蒸気の使用に関する。【解決手段】水蒸気生成装置４１０は、キャニスタ４２０を下側チャンバ４２２と上側チャンバ４２４とに分割するキャニスタ４２０内のバリア４２６を含む。下側チャンバ４２２は、水入口４３２から水４４０を受け取るように配置されている。水蒸気出口４３６のバルブ４８２は、上側チャンバ４２４から水蒸気４４６を受け取る。バリア４２６は、水蒸気４４６が下側チャンバ４２２から上側チャンバ４２４に移るための複数の開口４２８を有し、凝縮水が上側チャンバ４２４から下側チャンバ４２２に移ることを可能にする。水蒸気生成装置４１０は、下側チャンバ４２２の一部分に熱を加える加熱要素４３０を含み、加熱要素４３０の上方且つ水蒸気出口４３６の下方に水位４４２を保つために、水入口４３２を通る水の流量を変更するように構成されたコントローラ１２を含む。【選択図】図４Ａ

Cleaning of cmp temperature control system

A chemical mechanical polishing apparatus has a heating system, a purge gas source, a purge liquid source, and a controller. The heating system includes a source of heated gas, an arm extending over a platen, and a manifold in the arm with an a plurality of openings positioned over the platen and separated from a polishing pad for delivering the heated gas onto the polishing pad. The controller is configured to cause the heated gas to flow from the source of heated gas through the manifold and the plurality of openings to heat the polishing pad during a polishing operation, and to cause the apparatus to perform a purging operation which alternates between flowing purge gas from the purge gas source and flowing purge liquid from the purge liquid source through the manifold and the plurality of openings.

Cleaning of cmp temperature control system

A chemical mechanical polishing apparatus has a heating system, a purge gas source, a purge liquid source, and a controller. The heating system includes a source of heated gas, an arm extending over a platen, and a manifold in the arm with an a plurality of openings positioned over the platen and separated from a polishing pad for delivering the heated gas onto the polishing pad. The controller is configured to cause the heated gas to flow from the source of heated gas through the manifold and the plurality of openings to heat the polishing pad during a polishing operation, and to cause the apparatus to perform a purging operation which alternates between flowing purge gas from the purge gas source and flowing purge liquid from the purge liquid source through the manifold and the plurality of openings.

温度に基づくｃｍｐ中のインシトゥエッジアシンメトリ補正

【課題】ウエハ間の均一性を向上する。 【解決手段】化学機械研磨装置は、研磨パッドを保持するプラテンと、研磨プロセス中に研磨パッドの研磨面に対して基板を保持するために、アクチュエータによって研磨パッドを横切って横方向に移動可能なキャリアと、研磨パッド上の複数のゾーンの温度を独立して制御するための、複数の独立して制御可能なヒータ及びクーラを含む熱制御システムと、熱制御システムに、第１の温度を有する第１のゾーンと、異なる第２の温度を有する第２のゾーンとを研磨パッド上に生成させるように構成されたコントローラとを含む。 【選択図】図２Ａ

Method for cmp temperature control

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Low-temperature metal cmp for minimizing dishing and corrosion, and improving pad asperity

A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.

Monitoring of acoustic events on a substrate

A chemical mechanical polishing apparatus, including a platen supporting a polishing pad; a carrier head to hold a surface of a substrate against the polishing pad; a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate; an array of acoustic sensors arranged within the carrier head to receive acoustic signals from the surface of the substrate; and a controller configured to detect a position of an acoustic event on the surface of the substrate based on received acoustic signals from the array of acoustic sensors.

Pad surface cleaning device around pad conditioner to enable insitu pad conditioning

The present disclosure relates to a pad surface cleaning system to be used with a conditioning module to condition a polishing surface of a polishing pad. The pad surface cleaning system may be used to spray the polishing surface with a high-pressure fluid spray to loosen debris from the polishing surface. The pad surface cleaning system may also be used to remove the loosened debris. Further, the pad surface cleaning system may isolate a conditioning disk from a polishing fluid to protect the conditioning disk from reacting with the polishing fluid.

Steam-assisted single substrate cleaning process and apparatus

The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

In-situ conditioner disk cleaning during cmp

A polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against the polishing pad, a conditioner including a conditioner head to hold a conditioner disk against the polishing pad, a motor to move the conditioner head laterally movable relative to the platen, a conditioning disk cleaning station positioned adjacent the platen to clean the conditioning disk, and a controller configured to cause the motor to, during polishing of the substrate, move the conditioner head back and forth between a first position with the conditioner head over the polishing pad and a second position with the conditioner head in the conditioner disk cleaning station.

Slurry distribution device for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

Acoustic carrier head monitoring

A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

Hot water generation for chemical mechanical polishing

A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head, a motor to generate relative motion between the platen and the carrier head, a steam generator including a vessel having a water inlet and one or more steam outlets and a heating element configured to apply heat to a portion of lower chamber to generate steam, a nozzle oriented to deliver steam from the steam generator onto the polishing pad, a tank to hold a cleaning fluid, a first valve in a first fluid line between the vessel and the nozzle to controllably connect and disconnect the vessel and the nozzle, a second valve in a second fluid line between the vessel and the tank to controllably connect and disconnect the vessel and the tank such that steam from the vessel heats fluid in the tank.

Chemical mechanical polishing temperature scanning apparatus for temperature control

A chemical mechanical polishing apparatus includes a platen having a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature monitoring system. The temperature monitoring system includes a non-contact thermal sensor positioned above the platen that has a field of view of a portion of the polishing pad on the platen. The sensor is rotatable by the motor around an axis of rotation so as to move the field of view across the polishing pad.

Apparatus and method of substrate edge cleaning and substrate carrier head gap cleaning

The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.

化学機械研磨の温度制御

【課題】化学機械研磨中の温度制御に関する。【解決手段】化学機械研磨装置２０は、研磨パッド３０を保持するためのプラテン２４と、研磨プロセス中に研磨パッド３０の研磨面に対して基板を保持するためのキャリアヘッド７０と、研磨液を研磨面に供給するためのディスペンサと、研磨面又は研磨面上の研磨液に接触するように構成された本体を含む温度制御システム１２０とを含む。本体１１０は、研磨パッド３０の上に配置された熱制御モジュール１２０を支持する。【選択図】図２

低溫液體清洗裝置與方法

揭露低溫清洗裝置。低溫清洗裝置具有冷凍劑源、耦接於冷凍劑源的噴嘴，該噴嘴包含主要通道以及一或更多個輔助氣體進氣口，該主要通道適於容納該冷凍劑，且該一或更多個輔助氣體進氣口適於供應輔助氣體且適於在該噴嘴內或在該噴嘴的噴嘴出口處將該輔助氣體與冷凍劑混合以產生冷凍劑液滴；及加熱固持件，該加熱固持件適於容納待清洗之基板。正如許多其他態樣，茲提供適於清洗基板的低溫清洗方法。

Methods and apparatus for forming dual metal interconnects

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Steam treatment stations for chemical mechanical polishing system

An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Acoustic carrier head monitoring

A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

Acoustic carrier head monitoring

A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

用於聲學監控及控制直通矽穿孔之顯露處理的設備及方法

利用CMP(化學機械研磨)的TSV(直通矽穿孔)顯露製程可經聲學監控及控制，以偵測TSV斷裂並自動響應該TSV斷裂。在CMP製程期間，分析一或更多聲學感測器接收的聲射，以偵測TSV斷裂，聲學感測器設置鄰接基板固持件及/或CMP系統的研磨墊。響應偵測到TSV斷裂，可自動進行一或更多補救動作。在一些實施例中，研磨墊平臺具有一或更多整合於研磨墊平臺內的聲學感測器，聲學感測器伸入裝設在研磨墊平臺上的研磨墊。其他態樣亦提供監控及控制TSV顯露製程的方法。

Apparatus and method for controlling substrate polish edge uniformity

A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.

Index polishing for process control signal and wafer uniformity

A method of performing polishing processes on substrates may include receiving a substrate in a known alignment in a carrier head of a polishing station for a polishing process. The polishing process may cause the substrate in the carrier head to be polished by a polishing pad on a platen such that the substrate passes over one or more sensors in the platen along one or more predetermined sensor paths relative to the known alignment of the substrate. The method may also include causing the carrier head to move to a first position based on the one or more predetermined sensor paths; causing the platen to move to a second position based on the one or more predetermined sensor paths; and causing the substrate to rotate relative to the platen such that the one or more sensors pass along the one or more predetermined sensor paths.

Apparatus and method for controlling substrate polish edge uniformity

A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and / or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.