02-01-2020 дата публикации
Номер: US20200007135A1
Digital-to-analog converters (DACs) having a multiple-gate (multi-gate) transistor-like structure are disclosed herein. The DAC structures have a similar structure to a transistor (e.g., a MOSFET) and include source and drain regions. However, instead of employing only one gate between the source and drain regions, multiple distinct gates are employed. Each distinct gate can represent a bit for the DAC and can include different gate lengths to enable providing different current values, and thus, unique outputs. Further, N number of inputs can be applied to N number of gates employed by the DAC. The DAC structure may be configured such that the longest gate controls the LSB of the DAC and the shortest gate controls the MSB, or vice versa. In some cases, the multi-gate DAC employs high-injection velocity materials that enable compact design and routing, such as InGaAs, InP, SiGe, and Ge, to provide some examples. 1. An integrated circuit comprising:a body including semiconductor material;a source region and a drain region, the body between the source and drain regions, the source and drain regions including semiconductor material;a first gate electrode at least above the body, the first gate electrode including one or more metals; anda second gate electrode at least above the body, the second gate electrode including one or more metals, the second gate electrode distinct from the first gate electrode, the second gate electrode within 20 nanometers (nm) of the first gate electrode.2. The integrated circuit of claim 1 , wherein the semiconductor material included in the body includes indium.3. The integrated circuit of claim 1 , wherein the semiconductor material included in the body includes gallium.4. The integrated circuit of claim 1 , wherein the semiconductor material included in the body includes one of arsenic claim 1 , phosphorous claim 1 , or antimony.5. The integrated circuit of claim 1 , wherein the semiconductor material included in the body includes ...
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