Epitaxial growth method for light emitting diode
The invention provides an epitaxial growth method for a light emitting diode. The method comprises the step of sequentially growing a buffer layer, a non-doped layer, an N-type doped layer, a quantum well light emitting layer and a P-type doped layer on a substrate, wherein the quantum well light emitting layer includes an indium gallium nitride InGaN quantum well layer and an aluminum gallium nitride AlGaN quantum barrier layer and is grown in a periodic growth mode. According to the epitaxial growth method, provided by the invention, for the light emitting diode, the quantum well light emitting layer is grown in a periodic growth mode, which enables the dislocation density of the quantum well light emitting layer to be reduced by one order of magnitude to 10<6>cm<-2>, greatly reduces the carrier overflow effect and improves the number of radiative recombination centers in the quantum well light emitting layer. The phenomenon of efficiency decline of the LED at high current density is effectively restrained, for example, the efficiency decline of the LED is no more than 5% when test is carried out with the use of high current under the condition of large size (1mm<2>). 1. A method for the epitaxial growth of the light emitting diode, characterized in that comprises: On the substrate, are sequentially grown buffer layer, non-doped layer, N type doping layer, the quantum well layer and the P-type doping layer, the light-emitting layer comprises InGaN states the quantum pitfall InGaN quantum well layer and aluminum gallium nitrogen AlGaN quantum barrier layer, the light-emitting layer states the quantum pitfall manner the growth of the growth cycle. 2. Method according to Claim 1, characterized in that the substrate is a sapphire, silicon, silicon carbide, glass, copper, nickel or chromium; The buffer layer includes the following material in one or more of: gallium nitride GaN, indium nitride InN and aluminum nitride AlN. 3. Method according to Claim 1, characterized in that the barrier layer the quantum AlGaN states the aluminum gallium nitrogen GaN/AlxGayN/GaN layered structure, the layered structure comprises GaN/AlxGayN/GaN: 1st GaN quantum barrier layer, the quantum AlxGayN barrier layers and 2nd GaN quantum barrier layer; For wherein x 0-1 between, located in y 0-1 between. 4. Method according to Claim 3, characterized in that the quantum well light-emitting layer is made to grow 1st cycle growth mode, including: Growth states the indium gallium nitrogen InGaN quantum well layer; Growing the 1st GaN quantum barrier layer; Growing the AlxGayN quantum barrier layer; Growing the 2nd GaN quantum barrier layer. 5. Method according to Claim 4, characterized in that the luminescent layer states the quantum pitfall X the time states the 1st cycle growth manner growth; Wherein X is located in 2-20 between. 6. Method according to Claim 1, characterized in that the barrier layer the quantum AlGaN states the aluminum gallium nitrogen GaN/AlmGanN superlattice structure, the stated GaN/AlmGanN superlattice structure comprises: 3rd GaN quantum barrier layers and AlmGanN layer; For wherein m 0-1 between, is located n 0-1 between. 7. Method according to Claim 6, characterized in that the light-emitting layer states the quantum pitfall 2nd cycle growth manner the growth, including: Growth states the indium gallium nitrogen InGaN quantum well layer; The growth cycle 3rd the AlGaN quantum barrier layer, including: Growing the 3rd GaN quantum barrier layer; Growing the AlmGanN quantum barrier layer. 8. Method according to Claim 7, characterized in that the Y the time states the AlGaN quantum barrier layer growth mode 3rd cycle growth; Wherein Y is located in 2-20 between. 9. Method according to Claim 8, characterized in that the quantum well light-emitting layer growth of the 2nd cycle Z manner the time states growth; Wherein Z is located in 2-20 between. 10. The method of any one according to Claim 1-9, characterized in that the band of AlGaN quantum barrier layer pattern is in serration-shaped distribution.