SEMICONDUCTOR DEVICE FOR EMITTING LIGHT AND METHOD FOR FABRICATING THE SAME
The present invention refers to semiconductor light emitting element and its manufacturing method relates to, external driving power for formed on a layer of semiconductor light-emitting structure is configured to provide an ohmic semiconductor light emitting element and its manufacturing method relates to. Semiconductor light-emitting device (Light Emitting Diode; LED) and the life of the, to low-and a power supply unit are removably, strong and directivity for emitted light light. capable of low-voltage driving. Furthermore, shock and vibration strength which, preheating time and space from an oil pump when a driving circuit complex, .can be packaged in various forms. In particular, energy band gap semiconductor light-emitting device comprises a nitride-based light-grained surfaces of the polysilicon layer (band gap) red/blue ultraviolet region light output of wider wavelength bands, choking and, physical/chemical invention have superior stability to can be realized and n of sulfuric to. is receiving. Such nitride semiconductor light-emitting device comprises a conventional red, green light emitting element is installed in white when be combined with in the past several years, Korea future incandescent, fluorescent, pressure mercury lamp and an existing white illumination means expected to replace of wet liquid to flow down. However, galvanoscope optical output nitride semiconductor light-emitting device, luminous efficiency, does not Mar the in price which are not of, improving performance more is the regularized data in a database. In particular, compared to existing white light source still low light output parabolic shape and need, is, to form ash and to increase thermal stability according to.. While, generally a nitride semiconductor light-emitting device comprises a n-type nitride-based on a sapphire substrate, nitride-based active layer, for light emission formed nitride-based p, for applying power in elder brother layer p 406a said n horizontally is produced are disposed at the two electrodes. A light-emitting element of a vertical structure such relatively the via hole is formed, is direction with respect to the main housing but can be produced at low cost, a sapphire substrate bad thermal conductivity and non-conducting the use of the large area and a high-output through for applying current in realizing and heat accumulation according to thermal maintain the stability having a regular interval are marked on. A railing user interface and a user data area of vertical structured light semiconductor light emitting device and been proposed semiconductor light-emitting device having rhodium. P this case the substrate having the active layer to form a reflective layer the n electrodes allows data to be emitted outside through the, sapphire substrate instead the metal substrate good thermal conductivity large area by using heat and a quick for applying current in a high output power realizing and thermal stability door's opening thereby assuring the stability against. Such semiconductor light-emitting device comprises a maximum applied of vertical structured light semiconductor light-emitting a vertical structure current several times larger than has a structure similar to the structure can be high-power existing white illumination means that can replace high-are evaluated as typical for. On the other hand, semiconductor of vertical structured light in a light emitting element in a driving voltage characteristic by is formed on the material is an n should having low resistance characteristics. Of vertical structured light semiconductor light-emitting device comprises a metal substrate or Si, onto a support substrate a semiconductor substrate of, e.g. Ge is used as, laser lift-off (laser lift-off; LLO) process in removing sapphire substrate, metal substrate GaN thin film large coefficient of thermal expansion difference and wafer bonding temperature of the problems such as a laser lift-off step, if not high temperature heat treatment. the problems of the existing synthesizing method. Therefore, the a heat treating process enables to form ohmic under plasma atmosphere and Cr/Au been used for the suppression of costly Ti/Al n-type ohmic electrode. However, such formed on the ohmic electrode SiO2 capable of forming a protection film for high current in heat or large area light emitting diode by heat generated during fuel injection easily ohmic characteristics and in which the drive voltage is a certain voltage and transfers a corresponding decoding unit sequentially is connected to the semiconductor layer.. Oxidized easily Al in addition Ti/Al electrode, various solution easily a nitride is connected to the semiconductor layer.. Thus selectively exhibits low contact resistance, after a process of heat treatment, low contact maintaining resistance to a thermal stability properties a second region are sorely requested development of n-type ohmic electrode of wet liquid to flow down. And, semiconductor light-emitting device comprises a of vertical structured light of forming nitride semiconductor layer on a mother substrate nitride semiconductor layer after upper surface i.e., gallium polarity surface (Ga-face) p electrodes formed on, or a sand blast method and a on type electrode p then, the decoding equipment nitride semiconductor layer are separated from each other and a mother substrate lower surface i.e., nitrogen polarity surface (N-face) to the electrode material on the type n is usually are of much. However, nitrogen polarity surface unlike gallium (N-face) (Ga-face) surface polarity without a heat treatment a good ohmic characteristics and which can expect no, an auxiliary base plate (metal substrate) and the nitride semiconductor layer is self heat treatment due to thermal expansion coefficient differences easily do not go. Chip selection signal is enabled, a formed on nitrogen polarity surface of the existing method of the existing method Cr/Au (N-face) Ti/Al or has poor ohmic characteristics and specifically disclosed is an electrode for structure as well as not, and decides whether the specific signal exist also thermal stability. The present invention refers to said, a device for derived to, a hot forming silicide film having excellent thermal stability and is less apt to have a characteristic does not degrade because of the ohmic algorithm processor extracts a, gallium nitride semiconductor layer inhibits the growth of lactic polarity nitrogen as well as surface polarity ohmic characteristics and ohmic having excellent semiconductor light emitting element and its manufacturing method provides. According to one aspect of the present invention semiconductor light-emitting device comprises a, having light-emitting structure on a semiconductor layer; said semiconductor layer nanodot on layer, contact layer, diffusion barrier layers and time, a stepped portion ohmic electrode; includes, said said nano dot layer is formed on surface polarity nitrogen semiconductor layer, Ag, Al, which are formed of a material which is at least one of Au, Ti said contact layer, Ti-Al alloy, Ti-Ni alloy, Ta, Al, W, at least one of alloy W-Ti is higher than the, first said Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb at least one metal layer, or RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, CrOx is formed oxide layer of at least one, said Au capping layer, Al is made from at least one substance. Said nano dot layer is deposited and then a Ag layer a nitrogen ambient under heat treatment formed of nanosized Ag it is preferred that a the dot. The, nano dot layer can be formed at a thickness of 5 Å to 50 Å it is preferred that a. Ti said contact layer, said Cr first, a capping layer can be formed at a preferably Au. The, contact layer and sheet has a thickness of 1 Å to 1000 Å, first can be formed at a thickness of 3000 Å to 1000 Å it is preferred that a. Said n-type semiconductor layer, an active layer and includes for light emission p, the ohmic electrode said nitrogen polarity surface of an active layer and to mitigate said n it is preferable that the. Semiconductor light emitting element according to another aspect of the present invention the manufacturing method, light-emitting structure on forming a semiconductor layer having; polarity nitrogen semiconductor layer on said material layer and a nitration material layer nano dot; and said nano dot layer on contact layer, reflective layer, diffusion barrier layers and time, a stepped portion ohmic electrode; includes, Ag said nano dot layer, Al, -forming material layer and at least one of Au, Ti said contact layer, Ti-Al alloy, Ti-Ni alloy, Ta, Al, W, W-Ti alloy-forming material layer and at least one of, said first Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb at least one metal layer, or RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, CrOx patterns are formed by developing oxide layer of at least one, said Au capping layer, at least one substance Al has a. Nitrogen polarity said nano dot layer on said semiconductor layer is deposited for Ag a nitrogen ambient under heat treatment preferably formed. Ti said contact layer, said first Cr, Au capping layer preferably formed. Said ohmic electrode prior to formation of said semiconductor layer a surface treatment for a further embodiment it is preferred that a including. The, a surface treatment step, said semiconductor surface aqua regia aqueous solution immersed therein and cleaned and then being washed with deionized water then said semiconductor surface including drying the nitrogen it is preferred that a. The present invention according to nano dot layer/contact layer/diffusion prevention layer/capping layer ohmic electrode multi-layer structure including the nano dot layer of nitride semiconductor nitrogen polarity surface charge injection characteristics are improved ohmic characteristics and excellent which the film is to be formed, contact layer diffusion barrier layer acts in the manner of nitrogen environment thermal and hot, high current implant conditions deterioration due the substrate under the second epitaxial region to. forming silicide film having excellent thermal stability. In particular, the present invention according to nano dot layer/contact layer/diffusion prevention layer/capping layer ohmic electrode nitride semiconductor multi-layer structure including nitrogen polarity surface, through additional thermal treatment process despite unacknowledged so, low ohmic resistance and high optical reflectivity purpose: an instrument for an endoscope. Therefore, n type electrode (or n type pad) is polarity nitrogen of nitride semiconductor is at and has poor ohmic characteristics and, metal between a substrate and the nitride semiconductor by based on variations in coefficient of thermal expansion of to improve the ohmic characteristics and even difficult more of semiconductor light emitting elements a vertical structure, use can be made of, suitably. Figure 1 shows a a semiconductor light emitting element according to of the present invention number 1 embodiment also indicative of the cross section. Also of the present invention number 1 embodiment also 2 to Figure 5 shows a light cross section indicating a manufacturing process of. Land experiment Figure 6 of the present invention: an ohmic electrode, the current-voltage characteristics of indicating a graph. Figure 7 of the present invention: an land experiment indicative of a variation in the contact resistance of ohmic electrode for SiC semiconductor graph. Figure 8 shows a land experiment of the present invention also: an ohmic electrode is applied a semi polymer light emitting device, the current-voltage characteristics of indicating a graph. A semiconductor light emitting element according to of the present invention number 2 embodiment also Figure 9 shows a indicative of the cross section. Also Figure 12 shows a to 10 of the present invention number 2 embodiment also for semiconductor emitting device according to cross section indicating a manufacturing process. Hereinafter, reference to drawing with an of the present invention embodiment as further described to the thereby, the cold air flows. However, in the present invention refers to hereinafter which are defined a disclosure embodiment aspect is supported by the upper case and various different, will embodied in the form, of the present invention disclosure are in the embodiment the present only to is completely, of the invention executable commands for transmitting the clock radio person with skill in the art to completely intenna is to be provided for. Various drawing of a porous ceramic region layers and so that its wall thickness for securely presenting corresponding advertisement based on the shown list representation thus expanding the same drawings sheet to referring to a same element. Furthermore, layer, film, region, the parts which, for example, exhibiting an wave "on top" or "on" is represented that of the other portions each portion in the case where the "directly above" or "directly on the" as well as when each portion and other between a portion of the another includes even in the case of a section where a. < 제 1 실시예 > Figure 1 shows a also a semiconductor light emitting element according to of the present invention number 1 embodiment is indicative of the cross section. Also 1 with a, n-type semiconductor light-emitting device comprises said (121), active layer (122), p-type (123) of semiconductor device pattern using the same layer (120) and, said n-type (121) formed on a n type electrode (180) and, said p-type (123) and drives the front panel to open p type electrode (130) includes, said p type electrode (130) attached to the bottom face the support substrates with (170) further may include. Wherein, n type electrode (180) the semiconductor layer (120) (nano dot-type layer) (181) nanodot on layer, contact layer (182), diffusion barrier layer (183), capping (184) includes, said semiconductor layer (120) and ohmic contact with the ohmic electrode consisting of a multilayer structure. Semiconductor layer (120) the n-type (121), active layer (122) and p-type (123) includes, said n-type (121), active layer (122) and p-type (123) the Si film, GaN film, AlN film, InGaN film, AlGaN film, including a film, and their AlInGaN at least film can be formed from either of. For example, the present in the embodiment n-type in (121) and p-type (123) and on the molding layer in order to the GaN, active layer (122) is formed with the InGaN film. Wherein, n-type (121) the a as a layer which is, n-type clad layer in n type semiconductor layer and can be constructed. Such n type semiconductor layer and n type semiconductor thin film the aforementioned 213 n-type dopant for example, Si, Ge, Se, Te, by implanting such as C can be. And, p-type (123) as a hole by a layer providing a, p p type semiconductor layer and can be constructed in-type clad layer. P type semiconductor layer and such semiconductor thin film the aforementioned 213 type p p-type dopant for example, mg, Zn, Be, Ca, Sr, by implanting such as Ba can be. And, active layer (220) the n-type (210) provided a sensor part and a control part p-type (230) provided hole resides is formed to output the light of a specified wavelength while a conductive layer is formed as a layer which is, the barrier layer (well layer) well layer (barrier layer) obtained by alternately single or multiple quantum well (multiple quantum well) from semiconducting thin films in of a multi-layered structure can be. Such activity layer (220) a semiconductor material 2001 the wavelength of the light since is changed, targeting output wavelength suitable semi-conductor according to it is preferable that the materials selection. For example, the present in the embodiment in the GaN n-type impurities are injected to the n-type (121) is formed, GaN barrier layer thereon the alternative deposition InGaN layer well thin film and multiple well structure active layer (122) is formed, thereon back to the GaN-type impurities are injected to the p p-type (123) by forming a, semiconductor layer of the light-emitting structure (120) are formed at the. N type electrode (180) and p type electrode (130) is disposed in a vertical direction, and, said p type electrode (130) the active layer (122) to reflect light generated in the n-type and introducing almost all is (121) direction it enters public life, outside through the. concave purpose: a reflection. Said n type electrode (180) the semiconductor layer (120) nitrogen polarity surface (N-face) formed on a nano dot layer (181), contact layer (182), diffusion barrier layer (183) capping (184) for including ohmic electrode is formed with multi-layer structure. The, nano dot layer (181) the Ag, Au and Al at least one substance in a method for forming a faultless including nitrogen can be. Furthermore, contact layer (182) the Ti, Ti-Al alloy, Ti-Ni alloy, Ta, Al, W, W-Ti alloy of at least one substance may be formed of, remnant defects in source/drain (183) the Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb at least one metal layer, or RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, at least one oxide layer of CrOx can be formed. Furthermore, capping (184) the Au, Al at least one substance may be formed as. For example, the present embodiment the first deoxygenator n type electrode (180) the nano dot layer (181) is Ag, Ti layer contact, Cr diffusion barrier layer, a capping layer is made from Au. Support substrate (170) the semiconductor layer (120) of growth substrate i.e., base material substrate in an end the overall structure (120,130,180) make connected to the inner. This support substrate (170) is p type electrode (130) attached to the bottom face of substrate held in a manner that (170) and p type electrode (130) between the capping (160), junction layer (150), diffusion barrier layer (140) can be formed is. Said diffusion barrier layer (140) the p type electrode (130) and the support substrate (170) by heat when a bonding process of p type electrode (130) of forming material (120) adjacent layer in. is used for the prevention of. The driving coil has a plurality of a semiconductor light-emitting device also for the for manufacturing by referring to also to 2 5. off at the first and the second. Wherein, also 2 according to Figure 5 shows a also of the present invention number 1 embodiment for semiconductor emitting device is cross section indicating a manufacturing process. Also refers to surface 2, a semiconductor substrate (110) on n-type (121), active layer (122) and p-type (123) multi-layer structure are sequentially formed semiconductor layer (120) is formed on. Said substrate (110) sapphire at (Al2 O3) substrate, silicon carbide (SiC) substrate, silicon (Si) substrate, zinc oxide (ZnO) substrate, gallium arsenic (GaAs) substrate or gallium photographic print (GaP) cargo may be used in substrates, and the like, in particular using sapphire substrate. and it is more preferred to set. Also with a 3, said semiconductor layer (120) the deposition chamber is maintained at the metal film on p type electrode (130) is formed, said p type electrode (130) on diffusion barrier layer (140), adhesive layer (150), capping (160) is formed support substrate gluing process by means of an (170) for are attached to a vehicle. The present embodiment relate support substrate (170) bonding process is then heated for attachment of corresponding advertisement based on the shown embodiment, in heating process p type electrode (130) for forming a material is diffused to prevent p type electrode (130) on diffusion barrier layer (140) are formed at the. On the other hand, active layer (122) provided directly to the clock inputs of the light generated in the n-type (123) line, geometrically direction said p type electrode (130) an optical reflectivity an excellent conductive film for example, Ag or Au, and the like it is preferred to set a, support substrate (170) the metal substrate, or Si, using a semiconductor substrate of, e.g. Ge it is preferable that the. Also 4 refers to surface, using laser lift off (lift off) process embodiment the a mother substrate (110). removing. Ear, also 5 such as a, support substrate (110) is pointing downward to support substrate then an outer side (170) be mounted on an upper part of a semiconductor layer (120) for mesa etching (Mesa Etching) and, subsequent is formed by n type electrode (180) is divided into first to interface between semiconductor layer (120) a surface treatment for a the embodiment. The present embodiment after aqueous solution aqua regia (HCl: H2 O = 3:1) to said semiconductor surface i.e., n-type (123) to about 10 minutes then immersing which washes the deionized water, in such a way that nitrogen to dry surface treatment difference 1 embodiment and, subsequent layers i.e., n type electrode (123) prior to the deposition of a 1:1 hydrochloric acid (HCl) ashing is roughly to the solution in the warp in a manner 2 minutes before drying soaked into 2 embodiment a difference surface treatment. Well as, such 1 difference, a desired surface treatment difference 2 selectively method based on the purpose of the embodiment, or may be loaded with omitted. Refers to surface 5 also again, the exposed semiconductor layer (120) of n-type (123) surface 50 Å to 5 Å Ag a thin degree performed by the heat treatment in atmosphere including nitrogen nanosized dot process for partial quasi-hexagonal clusters consisting Ag nano dot layer (181) is formed on. Said Ag nano dot layer (181) the n-type (123) is formed on nitrogen polarity surface (N-face). Ear, Ag nano dot layer (181) on Ti contact layer (182), Cr diffusion barrier layer (183) and Au capping (184) after by patterning the Ag nano dot layer/Ti/Cr/Au structure of n type electrode (180) is formed on. The, said Ag nano dot layer (181) a thickness of less than 5 Å when the insertion is dot size which current injection efficiency is low, 50 Å over by at least one layer, or comprises a non-self in this respect, formed to a thickness of 5 Å to 50 Å it is preferable that the. Said Ti contact layer (182) contact if less than a thickness of 1 Å which cannot and the dielectric layer, 1000 Å thickness exceeds a stress a thin film from an increase in R2 are same or different hydrogen or at the surface of foot spot welder can be formed to a thickness of 1 Å to 1000 Å it is preferable that the. Said Cr diffusion barrier layer (183) (migration) diffusion if less than a thickness of 1000 Å is distance between the supports the blocking and 3000 Å to increasing resistivity exceeds a foot spot welder has a superior electric characteristic can be formed to a thickness of 1000 Å to 3000 Å it is preferable that the. Capping said Au (184) a thickness of 1000 Å if less than which is not suitable for wire bonding (wire bonding), 10000 Å exceeds a manufacturing cost since the formed to a thickness of 10000 Å to 1000 Å it is preferable that the. Furthermore, said n type electrode (180) formed on the of 10000 Å to 1000 Å is formed on it is preferable that the. For example, the present embodiment relate the semiconductor layer device (e-beam evaporator) electron beam evaporation (120) Ag on Cr/contact layer Ti layer/nano dot diffusion barrier layer/Au order capping layer 20 Å / 500 Å was formed to a thickness 5000 Å / 1000 Å /. After, improve adhesive power, and thermal improved ohmic characteristics and for securing liability of the n type electrode (180) and p type electrode (130) after formation of the in atmosphere including nitrogen, and oxygen and heat-treated in range of 600 °C to 150 °C may be loaded with further embodiment. On the other hand, of said semiconductor layer in a light emitting element in region is larger than the size of number 1 embodiment (120) forms a plane that ohmic and n type electrode (180) to see characteristics of experimental land. off at the first and the second example thereby, the cold air flows. Said experiment of the present invention number 1 embodiment relate: an Ag nano dot layer/Ti/Cr/Au ohmic electrode point, viscosity index, oxidation stability, said general of the existing method relate compared by cylinder to have ohmic electrode Cr/Au. Figure 6 of the present invention: an land experiment the current-voltage characteristics of the ohmic electrode as graph indicating a, selectively and approximately 350 °C after 1 minutes of a nitrogen ambient under current-voltage measuring characteristics corresponds is of graph. Also 6 with a, Ag towed experiment of the present invention selectively Ti/Cr/Au layer/nano dot Cr/Au towed compared of the present invention and ohmic electrode bonding pads the ohmic electrode show the current-voltage curve. However, heat treatment immediately after Cr/Au electrode while degraded is added and the current-voltage curve, Ag nano dot layer/Ti/Cr/Au ohmic electrode deposition is on the floor and immediately after the current-voltage curve is held the. Said slope of the current-voltage curve (I/V) the reciprocal of resistance (R) to which means that, of the present invention through Ag towed experiment is ohmic electrode Ti/Cr/Au layer/nano dot of the existing method Cr/Au towed compared of the present invention is less and as a result, the contact area between the resistance variation than ohmic electrode forming silicide film having excellent thermal stability can be confirm that the user. Therefore, Ag nano dot layer/Ti/Cr/Au towed experiment of the present invention the thermal ohmic electrode algorithm processor extracts a a high temperature stability at a high level by and low ohmic characteristics and semiconductor layer is maintained by gas filled within the high currents than light emitting element's light output can be, is further reduced in heat. Figure 7 shows a also of the present invention: an land experiment indicative of a variation in the contact resistance of ohmic electrode for SiC semiconductor as of graph, a nitrogen ambient under heat treatment on prints an corresponds the change contact resistance is of graph. To see electrical characteristics of ohmic electrode for SiC semiconductor Schottky (shottky) TLM method offer of a teacher are estimated contacted through the.. Correlation methods said TLM method d1, d2, d3, and d4 are to a second current flowing between the metal electrode (I)-voltage (V) 0V in resistance in the curve RT. obtained. Thus measured RT after green graph distance d is selected within the range a, when extrapolation of the two formulas through. and is capable of calculating the contact resistance. (Wherein, RT each metal electrode resistance between, RS the semiconductor layer, or into a resistance, d means of a metallic compound the distance between the electrodes, Z the metal electrode width, and ρC has contact resistance.) With a 7 also, Ag of the present invention selectively towed experiment the ohmic electrode Ti/Cr/Au layer/nano dot 7.4 x 10-5 Ωcm2 been visible contact resistance such that with low volume, of the present invention in addition ohmic electrode Cr/Au towed compared 8.3 x 10-5 Ωcm2 being almost such as was shown contact resistance. However, after nitrogen environment thermal of Cr/Au electrode 350 °C 3.53 x 10-1 Ωcm2 metal is in contact with resistance pricesuddenly,it increases, , electrode ohmic Ti/Cr/Au 4.7 x 10-4 Ωcm2 still low contact resistance, which has the value. The result is then towed experiment of the present invention even through Ag nano dot layer/Ti/Cr/Au ohmic electrode is compared of the present invention of the existing method Cr/Au towed forming silicide film having excellent thermal stability than ohmic electrode can be confirm that the user. Figure 8 shows a land experiment of the present invention also: an ohmic electrode is applied, the current-voltage characteristics of a semiconductor light emitting element as graph indicating a, 1 minutes approximately 350 °C a heat treatment of a nitrogen ambient under coat layer/Ti/Cr/Au nano Ag Cr/Au electrode and by cylinder to have electrode. Also 8 with a, Ag of the present invention testing towed Ti/Cr/Au layer/nano dot using ohmic electrode for semiconductor emitting device of the present invention current-voltage characteristics compared Cr/Au towed using ohmic electrode, the current-voltage characteristics of a semiconductor light emitting element more robust than confirm that the user can be, Ag towed experiment of the present invention the ohmic electrode Ti/Cr/Au layer/nano dot 20mA -2.8V in very good of injected current conditions showed a driving voltage characteristic by. Ag nano dot layer/Ti/Cr/Au and ohmic electrode of structure (180) the Ag nano dot layer (181) the semiconducting layers (120) the monitor is to charge injection properties, Ti contact layer (182) is n-type (121) and Cr/Au electrode (183,184) between diffusion barrier (diffusion barrier) acts in the manner of nitrogen environment thermal and hot, high current implant conditions (intermixing) deterioration due the substrate under the second epitaxial region to. forming silicide film having excellent thermal stability. Therefore, Ag nano dot layer/Ti/Cr/Au structure using ohmic electrode of semiconductor light-emitting device comprises a further a low driving voltage and that which region is, . thermal stability. And, the results indicate that Ag nano dot layer/Ti/Cr/Au Al in ohmic electrode instead of Ag, Au nanostructures in at least one substance dot layer, the aforementioned Ti-Al alloy Ti instead, Ti-Ni alloy, Ta, Al, W, W-Ti alloy conductive high polymers is one selected from at least one of, the aforementioned Ru Cr instead, Pt, Ni, Pd, Ir, Rh, conductive high polymers is one selected from at least one of Nb, Au Al the aforementioned instead and even using similar experiments can be obtained. < 제 2 실시예 > While, a semiconductor light emitting element according to of the present invention number 2 embodiment which is applicable to, in this Ag nano dot layer/Ti/Cr/Au structure is extracted from a liquid metal ohmic of even of semiconductor light emitting elements structure can be applied. Is the, example of such n type electrode and which are disposed in the a vertical structure-type ohmic contact layer p according of the present invention number 2 embodiment relates to a semiconductor light emitting element. The, the aforementioned embodiment examples of the sound generating bodies the directions of which the described briefly eliminates or description. Figure 9 shows a also a semiconductor light emitting element according to of the present invention number 2 embodiment is indicative of the cross section. 9 also refers to surface, said semiconductor light-emitting device comprises a substrate (210) formed on n-type (221), active layer (222), p-type (223) for including semiconductor layer (220) and, said n-type (221) the exposed regions of a n type electrode (230) and, said p-type (223) formed on p type electrode (240) includes. Wherein, n type electrode (230) and p type electrode (240) at least one a semiconductor layer (220) nanodot on layer (231/241), contact layer (232/242), diffusion barrier layer (233/243) capping (234/244) includes, said semiconductor layer (120) and ohmic contact with the ohmic electrode consisting of a multilayer structure. The driving coil has a plurality of a semiconductor light-emitting device also for the for manufacturing by referring to also to 10 12. off at the first and the second. Wherein, also also Figure 12 shows a to 10 according of the present invention number 2 embodiment for semiconductor emitting device is cross section indicating a manufacturing process. Also with a 10, prepared substrate (210) on n-type (221), active layer (222) and p-type (223) chamber to be stacked on the substrate semiconductor layer multi-layer structure (220) is formed on. Said substrate (210) at sapphire substrate, silicon carbide substrate, silicon substrate, zinc oxide substrate, GaAs cargo substrate or gallium printing substrates, and the like may be used in, in particular using sapphire substrate. and it is more preferred to set. Said semiconductor layer (220) at Si film, GaN film, AlN film, InGaN film, AlGaN film, including a film, and their AlInGaN using one of film it is preferable that the. The present in the embodiment in the GaN n-type impurities are injected to the n-type (221) is formed, GaN barrier layer thereon the alternative deposition film InGaN layer well film and multiple well structure active layer (222) is formed, thereon back to the GaN-type impurities are injected to the p p-type (223) are formed at the. Although not shown, said substrate (210) and n-type (221) further includes elastomer, and the buffer layer may be formed, said substrate buffer layer (210) and n-type (221) between lattice mismatch stress or solid state transferred for a subsequent n-type is formed by (221) one side of the third. help growth. Also 11 with a, said p-type (223) and active layer (222) part of mesa etched n type electrode (230) n-type is formed (221) part of is exposed. Ear, a barrier layer subsequent layers to improve the semiconductor layer (220) a surface treatment for a preferably embodiment. For example, the present embodiment when the aqueous solution the first deoxygenator aqua regia (HCl: H2 O = 3:1) to said semiconductor surface i.e., n-type (223) to about 10 minutes then immersing which washes the deionized water, in such a way that nitrogen to dry surface treatment difference 1 embodiment and, subsequent layers i.e., n type electrode (230) and p type electrode (240) prior to the deposition of a 1:1 hydrochloric acid (HCl) ashing is roughly to the solution in the warp in a manner 2 minutes before drying soaked into 2 embodiment a difference surface treatment. Well as, such 1 difference, a desired surface treatment difference 2 selectively method based on the purpose of the embodiment, or may be loaded with omitted. Also refers to surface 12, exposed n-type (221) and p-type (223) on the surface 50 Å to 5 Å Ag a thin degree performed by the heat treatment in atmosphere including nitrogen nanosized dot process for partial quasi-hexagonal clusters consisting Ag nano dot layer (231/241) is formed on. The, said Ag nano dot layer (231/241) the n-type (221) and p-type (223) is formed on (Ga-face) surface of gallium polarity. Ear, Ag nano dot layer (231/241) on Ti contact layer (232/242), Cr diffusion barrier layer (233/243) and Au capping (234/244) after by patterning the Ag nano dot layer/Ti/Cr/Au structure of n type electrode (230) and p type electrode (240) is formed on. The, Al instead Ag, Au nanostructures in at least one substance can be dot layer. Furthermore, Ti alloy Ti-Al instead, Ti-Ni alloy, Ta, Al, W, W-Ti alloy conductive high polymers is one selected from at least one of, Ru Cr instead, Pt, Ni, Pd, Ir, Rh, conductive high polymers is one selected from at least one of Nb, using Au Al the aforementioned instead may be loaded with. After, improve adhesive power, and thermal improved ohmic characteristics and for securing liability of the n type electrode (230) and p type electrode (240) after formation of the in atmosphere including nitrogen, and oxygen and heat-treated in range of 600 °C to 150 °C preferably embodiment. The ohmic electrode of Ag nano dot layer/Ti/Cr/Au (230/240) the Ag nano dot layer (231/241) the semiconducting layers (220) the monitor is to charge injection properties, Ti contact layer (232/242) Cr/Au electrode 406a is n (233/243,234/244) acts in the manner of diffusion barrier between nitrogen environment thermal and hot, high current implant conditions deterioration due the substrate under the second epitaxial region to. forming silicide film having excellent thermal stability. Therefore, Ag nano dot layer/Ti/Cr/Au structure of ohmic electrode (230/240) using the semiconductor light-emitting device comprises a further a low driving voltage and that which region is, . thermal stability. Or more, to the present invention introduced a and appends in the embodiment described but reference to drawing, which not limited to the present invention refers to, is defined by a refers to claim. Therefore, usual the art with knowledge the idea claim a refers to grow within such a range that causes no the current source from deviating from section side receiving channel and various modified the present invention may be is can understand. 110, 210: base material substrate 170: support substrate 120, 220: semiconductor layer 121, 221 : n-type 122, 222: active layer 123, 223 : p-type 130, 240 : p type electrode 180, 230 : n type electrode The present invention refers to a semiconductor layer having light-emitting structure on; said semiconductor layer nanodot on layer, contact layer, diffusion barrier layers and time, a stepped portion ohmic electrode, said said nano dot layer is formed on surface polarity nitrogen semiconductor layer, Ag, Al, are formed of a material which is at least one of Au semiconductor light emitting element and its manufacturing method provides. Semiconductor light emitting devices, such as is in dot layer/contact layer/diffusion prevention layer/capping layer ohmic electrode multi-layer structure including the nano dot layer of nitride semiconductor nitrogen polarity surface charge injection characteristics are improved ohmic characteristics and excellent which the film is to be formed, contact layer diffusion barrier layer acts in the manner of nitrogen environment thermal and hot, high current implant conditions deterioration due the substrate under the second epitaxial region to. forming silicide film having excellent thermal stability. N-type, an active layer and for light emission p including semiconductor layer; and said n surface polarity gallium of an active layer and to mitigate an ohmic electrode comprising a, said ohmic electrode the nano dot layer, contact layer, includes layer and the capping layer are diffusion barrier, Ag said nano dot layer, Al, which are formed of a material which is at least one of Au, Ti said contact layer, Ti-Al alloy, Ti-Ni alloy, Ta, Al, W, at least one of alloy W-Ti is higher than the, first said Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb at least one metal layer, or RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, CrOx is formed oxide layer of at least one, said Au capping layer, Al is higher than the at least one of, said nano dot layer is deposited and then a Ag layer a nitrogen ambient under heat treatment formed of nanosized Ag dot consisting of a semiconductor light emitting element. Deleted According to Claim 1, said nano dot layer can be formed at a thickness of 5 Å to 50 Å semiconductor light emitting element. According to Claim 1, Ti said contact layer, said first Cr, Au capping layer a semiconductor light-emitting device is formed. According to Claim 1, said contact layer can be formed at a thickness of 1 Å to 1000 Å semiconductor light emitting element. According to Claim 1, 1000 Å to said first semiconductor light emitting element can be formed at a thickness of 3000 Å. Deleted Deleted Deleted Deleted Deleted Deleted
