ACOUSTIC RESONATOR COMPRISING ACOUSTIC REFLECTOR, FRAME AND COLLAR
Cross references of related application The present application the, application 29 October 2012 as a title of the invention is "Acoustic Resonator Having Collar Structure" continue portion call patent application number 13/663,449 Americans sharing in applicant 28 February 2013 as "Acoustic Resonator Having Collar and Frame" in a title of the invention is application sharing Americans patent application number 13/781,491 continue portion call applicant 31 July 2013 as a title of the invention is application sharing in "Acoustic Resonator Comprising Collar, Frame and Perimeter Distributed Bragg Reflector" 37 C. F call patent application number 13/955,774 Americans. R. Continue portion under application is § 1.53 (b), their whole said patent application is integrated herein as a reference. American call patent application number 13/955,774 in addition, application 29 March 2011 as a title of the invention is "Stacked Acoustic Resonator Comprising Bridge" in sharing Americans patent application number 13/074,262 call (American is disclosure to each arc, patent application disclosure number 2012/0218055) application as applicant 12 August 2011 continue portion of a title of the invention is "Stacked Bulk Acoustic Resonator Comprising a Bridge and an Acoustic Reflector along a Perimeter of the Resonator" in sharing Americans patent application number 13/208,883 call (American is disclosure to each arc, patent application disclosure number 2012/0218059) of 37 C. F. R. Continue portion under application is § 1.53 (b). A variety of electronic applications acoustic resonators for implementing signal processing in function based. For example, some cellular phones and other communication devices the transmitted and/or for signals received frequency filter for implementing. using acoustic resonator. Different applications according to several different types of acoustic resonators are can be used, examples thereof, (thin film bulk acoustic resonators; film bulk resonators) FBAR such as BAW (bulk acoustic wave; bulk acoustic wave) resonator, CRF (coupled resonator filters; coupled resonators and filter), SBAR (stacked bulk acoustic resonators; stacked bulk acoustic resonator), (double bulk acoustic resonator; double bulk acoustic resonator) DBAR, and SMR (solidly mounted resonators; to a solid mounted resonator) includes. The FBAR, for example, cavity (cavity) of number 1 number 2 on (upper) (lower) electrode and of but layer piezoelectric between the electrodes, mounted on the reflectors on acoustic SMR (lower) electrode and of number 1 number 2 of (upper) layer including an piezoelectric between the electrodes. BAW resonator fro, cellular telephone, personal digital assistant (personal digital assistants; PDA), electronic game device, laptop computers and other a mobile communication device, a variety of electronic very may be used in applications. For example, FBAR and SMR for and duplexer, to be operated in a high frequency filter having a high may be used. Generally, acoustic the acoustic resonator to efficient position in structure referred to as the stack 2 of plate electrodes interposed between a piezoelectric material layer, said layer including a. Input electric signal inputted into the applied to between the electrodes, by a piezoelectric impulse ink shift region or acoustic stack piezoelectric material of polarisation mechanical according to is be such as to expand or shrink. Input electric signal inputted into the changes with the passage of time; and, the expanded or contracted acoustic stack, various through acoustic resonator a propagates a piezoelectric impulse ink which is converted electric signal outputted by generates acoustic waves. Acoustic wave portions of the resonance over an acoustic stack whereby in use the, its resonance frequency an acoustic stack of materials, dimensions, and operating conditions by factors such as chronological age is determined. Acoustic resonator these and other of its frequency responses are mechanical properties and decides the. Generally, the acoustic resonator, the different types of resonator are, or resonance mode influenced by different cross regions may includes (lateral regions). These transverse region are, very broadly, an active main region and a peripheral region can be characterized into, the active regions main wherein, at approximately, 2 of plate electrodes and piezoelectric material interval, defined by an overlap between, active region when main peripheral region is defined as area outside of the growth windows. In FBAR, 2 one peripheral regions are, in particular, air cavity of FBAR (air-cavity) MUX multiplexes the output of the main edge of between the recess and the edge of the active region, and at least one plate electrode and the piezoelectric material of substrate overlap of region and a main processing unit that a peripheral portion of between both edges of the active region is defined as. In SMR, one the perimeter regions, in particular, at least one plate electrode of, non-is an overlap with the other plate electrode, is defined as overlap with piezoelectric material. Main the active regions 2 of plate electrodes generated by the electric field between the emission an electrically excited modes of is influenced, an active and periphery areas both main (both) are electrically excited modes energy of scattering produced by modes of (derivative) of the derived a predetermined affected. Electrically excited modes are, for example, at the edges of active region when main having boundaries 20a acoustic a species which piston formed by (longitudinal acoustic waves) includes mode. Derived modes are, for example, peripheral regions active region when main 20a acoustic cross excited at the edges of laterally formed by (lateral acoustic waves) includes (lateral modes) modes. Cross modes a main electrically driven essentially active region the periphery areas that assists in reversing the mechanical particles rates and stresses enables continuity of. Here they are freely from a current point of attachment to propagation or (called propagation modes are). in the form of or exponential ([...] (evanescent) and composite modes called evanescent wave). They are of discontinuities into cross structure (for example, main active region, or top or bottom electrode at the edges of the different thicknesses of among zones in interface) by or electric field discontinuities into (for example, electric field is suddenly terminated with a at least the upper end of the edge) .may be excited both upon. Cross mode are generally the sound of the resonator has deleterious consequences to the performance. Therefore, some acoustic resonators inhibiting or modes cross, was blacked out, or amelioration designed and made to enable the auxiliary structure includes (features) features. These supplemental structural of features across a plurality of potential embodiments of the existing method has toward. For example, according to their specific design, they weights to advantage of a piston can also be prepared for additional mode may be a source of the scattering. Additionally, they has an adverse acoustic energy as well as by the acoustic from a stack for a redistribute additional materials, e.g. relatively soft layer may be requires the presence of. Furthermore, some design options but that greatly enhances cost usually occur for improving performance of, thereby to calculate the. Furthermore, auxiliary structure features the formation of the structural stability or overlying layer formation of hindering-is. Furthermore, the SMR and of the existing method FBAR electrically excited piston. to the action range of the VCO lowering mode (strong confinement). The action range of the VCO strong edges of the upper and lower electrodes as well as, air bridge and of the existing method and an adjuvant, such as outer frames are structural feature in is provided by. A strong stress is at least the upper end of the at the edges of the mechanical motion for excitation to prevent the disclosed edge connector is that it but advantages clear of the action range of the VCO strong, significant in addition it provides acoustic discontinuities, desired piston mode from the an extension unwanted that, overall structural energy, shear, bending and expansion mode is each in scattering to. Therefore, of the existing method acoustic resonator structures in terms of these and other disadvantages, improved sound resonator is to encapsulate the typical to design the need present. An exemplary embodiment of drawing are reviewing types of the following linked with understood best from the following description.. Various features illustrated line and the actual necessarily itself is not it is emphasized the. Actual, discussed for elcellent distinctions of optionally dimensions may be increased or decreased. If, the degaussing, conventional applicable, the same drawing the signs identical elements. indicates a. Also 1a has exemplary embodiment form according to the operating frequency range of acoustic resonator is shaving. Also according to 1b has exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also the other, the hand of the 1c according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also the other, the hand of the 1d according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also the other, the hand of the 1e according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also the other, the hand of the 1f according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also 2a the other, the hand of the exemplary embodiment according to form of acoustic resonator is cross-sectional drawing. Also 2b the other, the hand of the exemplary embodiment according to form of acoustic resonator is cross-sectional drawing. Also the other, the hand of the 2c according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also the other, the hand of the 2d according to exemplary embodiment form is cross-sectional drawing of acoustic resonator. Also 3a the other, the hand of the exemplary embodiment according to form of acoustic resonator, that excludes frame is a cross-sectional drawing. Also 3b the other, the hand of the exemplary embodiment according to form of acoustic resonator, that excludes frame is a cross-sectional drawing. Also the other, the hand of the 3c according to exemplary embodiment form of acoustic resonator, is cross-sectional drawing except for the colors (collars). Also exemplary the other, the hand of the 3d form of acoustic resonator according to embodiment, color except for is a cross-sectional drawing. Figure 4, frames or colors which do not have compared to acoustic resonator, a representative embodiment according to types, presence of frames and/or color, and frame width (Rp) parallel resistors as a function of is a graph is exemplified. Figure 5 shows a also, according to types representative embodiment, ground and for floating of sound resonator 3a thicknesses-transfer (Rp) parallel resistors as a function of is a graph is exemplified. Detailed in the description of the following, non-limited for purposes of described, of teachings present understanding complete disclosure details provided to an exemplary embodiment is are described in. However, the particular disclosure herein, which begins with a raw in detailed teachings present embodiment other according to claim of relay station terminal types is that maintained within the range of, the present disclosure have the benefits of will nontrivial twiddle factors and her one skilled in the art. Furthermore, an exemplary embodiment with a description of form to without ambiguous, widely publicly known with a description of a device and method may be omitted. Such method and device are clarified that teachings present in a range of. As used herein, a term, only, specific embodiment form describing purposes in a chamber in which, not intended to limit the. Defined terms are understood and generally at related situation receiving prosthetic devices as defined terms technical, scientific is in addition to semantic or generally. Contextually terms are type short-lived clearly to be unsafe otherwise a prevent it from pointing to, indication of a single or a plurality (referents) objects includes both. Therefore, for example, "device" one device and a plurality of device including. Terms "substantial" or "substantially" the an acceptable limit with or degrees is in a.. Terms "approximately" the to one skilled in the art an acceptable limit with or quantity is in a.. "On", "below", "upper (top)", "lower (bottom)", "(upper) upper" and "lower (lower)" and a such relative terms are, in drawing of attached as exemplary, is that various elements of respect to each other used to describe the relationships may be. These relative terms are described in radial outside of the radial drawing device and/or element of is intended to sweep out a different orientations. For example, in drawing device when inversion schemes for view, other elements, described here as "on" a element, for example, . is below a element where no particular requirement on now. Number 1 of devices are number 2 of unit connected with, or otherwise coupled to having been spoken surface, this, one or more intermediate devices for connecting two or devices 2 that may be utilised to encompasses examples. In contrast, number 1 of devices are number 2 is connected directly to of devices or purposefully bonded surface having been spoken to, this, the electrical connectors (for example, lines (wires), bonding material, etc.) in addition to devices without any intervention 2 devices encompasses examples are connected to each other and the. SMR or FBAR are generally teachings present such as but relates to acoustic resonator, the FBAR respect to the discussed. Material and manufacturing method of acoustic resonator including a predetermined specification a secure device and is owned into the cavity of a patent application at one or more of the American patent and can be found: presented to the American call patent number 6,107,721 Lakin; such as presented to the American Ruby patent number 5,587,620 call, number 5,873,153 call, call number 6,507,983, number 6,384,697 call, call number 7,629,865 call and number 7,275,292; such as Feng presented to the American patent number 7,280,007 call; such as presented to the American Jamneala patent disclosure number 2007/0205850 call; such as presented to the American Ruby patent number 7,388,454 call; such as call patent application disclosure number 2010/0327697 presented to the American Choy; such as call patent disclosure number 2010/0327994 presented to the American Choy; such as presented to the American Nikkel patent application number 13/658,024 call; such as presented to the American Burak patent application number 13/663,449 call; such as presented to the American Burak patent application number 13/660,941 call; such as presented to the American Burak patent application number 13/654,718 call; such as presented to the American Ruby patent disclosure number 2008/0258842 call; and Kaitila patent number 6,548,943 American imparting entertainment factor, so as to call. These patent patent application and disclosure of their whole. have been incorporated into the spherical body herein as a reference. In these patent and patent application described components, materials, and manufacturing method and there has the representative of the understanding of the mechanism of one skilled in the art that lie within the ranges other manufacturing method are taken into account and materials is it is emphasized that. To a predetermined described in representative embodiment, acoustic resonator the upper and lower electrodes are interconnected by are arranged substantially between the front ends piezo-layers, disposed on the substrate and distributed Bragg reflector (distributed Bragg reflector; DBR) includes such as acoustic reflector. Acoustic reflector includes one or more of stacked acoustic reflector layer pair including the, each acoustic reflector layer pair high acoustic impedance material is laminated on acoustic impedance layer formed of low acoustic impedance layer, said layer including a low acoustic impedance. The upper portion of the acoustic reflector lower electrode acoustic impedance layer pair low acoustic impedance layer, and the pads are arranged on. Piezoelectric layer, which is placed on a electrode, , and the pads are arranged on a piezo-electric layer an upper electrode. Generally, upper of electrode connection of an edge of a DBR from the substrate by acoustic provides for separation of the so called "dead-FBAR" substantially remove the region. It is generally for FBAR is advantage of SMR. Alternatively, in the area "dead-FBAR" FBAR device, vibrations pipe acoustic resonator, (underlying) of a base of a lower electrode and a so and in a vertical boundary between the air cavity at an interface of the base between the substrates N. electrically excited through scattering mechanical motion, and FBAR acoustic stack and the substrate through the effect transducer in a region in which overlap with each other, the may be weakened. Acoustic resonator a main body disposed outside the active region when the main color (collar) and/or main within the active region further includes a frame disposed about a perimeter may be loaded with. Main the active regions upper electrode, piezoelectric layers and, overlap with the bottom electrode is defined by. The collar, for example, an evanescent wave from boundary [...] of modes in the main in a receiving node to permit a smooth attenuation mechanical for on an active region to improve the limits of motion, outside the boundary of active region when main of insulating material may be formed by. Color typically main active region or main or as to ALIGN substantially with, an inner edge overlap with each other, the slightly active region and has a. Therefore, the collar of the active region main generally [...] evanescent wave color modes and piston (eTE1) thickness longitudinal [...] evanescent wave region to coupled to extension mode thickness. Frame, for example, upper electrode at the edges electrically excited piston mode provided to minimize the scattering of main mechanical for on an active region to improve the limits of motion, main active region in the conductive or insulating material may be formed by. Frame, typically at main active region is substantially aligned with the outer edge thereof that has a. Therefore, frame is generally inhibit the excitation for propagation modes are. Color a finite width relatively thick insulating regions and can be formed with the, upper electrode on, or lower electrode, a piezo-electric layer, such as between various alternative location may be located. Color for connecting a plurality of layers which may be divided into more than one position, said position may be formed. Furthermore, the collar inside other features of acoustic resonator, for example, piezoelectric layer may be formed. Color above and below a color region of acoustic resonator will referred to as. Color typically, color region in the main cutoff frequency in active region substantially as and cutoff frequency, a vision main modes thereof (for example, evanescent wave [...] mode) the main active region substantially the same mode and piston in modal (modal) is designed to have distribution. In mode piston this color region in which the acoustic energy is unwanted propagation modes are active region and a main processing unit that in radio and evanescent wave [...] modes prevents which is converted. In propagation modes are color region, energised, acoustic resonator area outside of the growth windows generally due to acoustic radiation to (acoustic radiation) or presented as a energy loss may be. Similarly, active region when main [...] modes are evanescent wave frequency within, energised, generally to generate gradient voltage cross, this cross current for drying by heat and run-streams may appear this loss in energy. Therefore, internal and external of the active region a main color in unwanted spurious cross modes while suppressing the excitation for (spurious lateral modes) active region when main piston in limits of mode may be improve. This, eventually, entire acoustic scattering loss reduce the acoustic of the resonator MCM (Q factor) and parallel resistors (Rp) may be to improve the. In the absence of the color, electrically excited piston mode of the upper electrode relative to the edge causing significant acoustic impedance discontinuity there may. In addition at the edge of upper electrode electric field since the terminated with, its edges at an interior and an exterior of a main active region supported by the structure of both [...] an evanescent wave, frequency composite modes mechanical and electrical excitation will cause both. Evanescent wave of the exponential modes and composite [...] is in the form of, thus that are not wide enough color structure is suppress them. Furthermore, propagation modes appropriate width cathode type color structure the formation may be inhibited by. Additionally, upper miniaturized extending color structure (up or down) operate as the a unified frame that may be, thus in front of edge have a top electrode same electrically excited piston the amplitude of the mode for propagation modes to suppress further acoustic impedance discontinuities can provide. Therefore, in the presence of a color designed therefor, a predominate portion of the developed-modal energy piston at the edges of the upper electrode in evanescent wave color region may be coupled to mode [...] , this then color that are not wide enough the exponential internal from the direction of slides of both may be. When that overlap the selected color-stabilized zirconia, acoustic reflector supported by collar and composite [...] an evanescent wave combined in to the substrate modes inhibit in addition. Material, (capable although in addition also insulating material) layer of conductive material generally, upper and/or lower electrode is by may be frame formed. Frame, for example, composite frame or an add-on (add-on) can be either frame. For example, aluminum (Al), and molybdenum (Mo) the consolidated non-composite frame formed, such as a mobile phone or cross features, in upper or lower electrode, exposed higher of basestation in IMT-lower electrode or the upper bottom surface or low order surface the surface, for embedding a material is formed by. An add-on frame the main active region lower portion, or along the circumference of either forms an upper electrode on the first of a layer, the layer material thereof is formed by deposited and accumulated. Composite use of a frame has a planar surfaces and application of layers on for simplifying manufacture of acoustic resonator relation to.. For example, projection layer overlying it (outcroppings) and capable of preventing of, structural stability of acoustic resonator this purpose: an instrument for an endoscope. Frame of acoustic resonator above and below the frame generic region will referred to as the region. In frame region frame electrically excited piston mode generally inhibiting, it unique propagation in cross direction the (eigenmodes) modes (resonantly) inhibiting in resonator alternatively, two effects are. simultaneously improving the operation of acoustic resonator. Frame presence of the main active region with the other parts of frame region between at least one mismatch acoustic impedance mismatch and cutoff frequency generally is the generating. Main active region and frame region compared to a slow frame for lowering cutoff frequency in frame (Low Velocity Frame; LVF) the present invention referred to as the, main while frame region compared to active region and increasing the cutoff frequency in a frame high speed frame (High Velocity Frame; HVF) will referred to as the. A argument behind method designated is, (frame and a main processing unit that active region thickness of the are substantially the same) when composite frame of, cutoff frequency is increase or decrease of, each, producing such a frame, and a barrel adaptor (sound velocity) sonic effective stack substantially equal increase or decrease of. is that it be. Sonic an effective corresponding active region when main lower than effective sonic has a complex or an add-on frame (i.e., LVF) the, generally, parallel resistors (Rp) Q of the resonator and sound a main factor enhance to over cutoff frequency of the active region. Vice versa, an effective corresponding active region when main sonic higher effective sonic has a complex or an add-on frame (i.e., HVF) the, generally, acoustic resonator of the resonator and sound (Rs) series resistance of a main factor Q of keywords decreases below to cutoff frequency of the active region. Conventional frame at low speed, for example, at a level significantly below the active region when main so that a region having cutoff frequency for efficiently providing and thus at least the upper end of the emission surface of the light in the region of frame electrically excited piston mode the amplitude of the. Furthermore, it interfaces of 2 provides (impedance mismatch planes), these the propagation eigenmode for application in a reflection layer of enhance to. These propagation eigenmode are active/frame excited mechanical at the interface, both the upper electrode are excited mechanically and electrically at the edges. The width of the frame for a given eigenmode when designed properly, it is specific by improved resonant is results. Furthermore, a slow frame sufficiently wide, propagation eigenmode similar to the ones low cost ball grid array devce mechanisms and composite [...] evanescent wave smooth of modes in the provides an area for attenuation. Parallel combination of the effects of said resonant frequency (Fp) at higher Q factors. calculates a better that energy constraints. Various subcarriers of colors and frame as well as additional examples, for materials for and an operating characteristics have an, such as a is from 600 to 3,000 in terms presented to the American Burak 13/660,941 call and patent application number 13/663,449 calls and described, their whole is integrated herein as a reference. These patent application described in, color and frames are, acoustic stack, such as the electrode layers and piezoelectric, acoustic resonator optical sensing system relative to other portions of various alternative positions of the can be which are located in and configuration. Additionally, the dimensions of their, materials, (positioning), or the like, that has relative positioning, target resonant frequency, series resistance (Rs), parallel resistors (Rp), or electromechanical coupling coefficient (Kt2) and a induced by such a specific design goals achieving both of can b adjusted to. SMR of the following description is presented in the form of devices but various embodiment forms, some general outline described, for example, FBAR, such different types of acoustic resonator may be embodied in in. Also 1a has exemplary embodiment form according to acoustic resonator (100A) of shaving and, also to 1b also different embodiment 1f A-A line according to types' along the taken acoustic resonator (100A) of their cross-sectional drawing. Cross-sectional drawing are acoustic resonator (100A) different modified corresponds to the example, each, acoustic resonators (100B-100F) will referred to as. Acoustic resonators (100B-100F) many features, such as a mobile phone or the same, thus, these features as repeated in an effort to avoid redundancy, a difference between both scales is of may be sites. 1a also refers to surface, acoustic resonator (100A) the, wiring (interconnect; 102) for providing electrical connection to configured to connection side (connection side; 101) having, for example, described in embodiment five (5) sides (sides) of apodized (apodized)-like electrode having a upper surface electrode (135) includes. Wiring (102) acoustic resonator (100A) piezoelectric layers of the resonator elements (also 1a to not shown) acoustic rates at upper electrode excitation optical waves (135) provides electrical signals to. The 1f also to 1b also, according to types representative embodiment, acoustic resonators cross-sectional drawing. are exemplified. Also depicted examples 1f also to 1b (as well as to discussed Figure 2a to also examples depicted 4) in, of for the sake of convenience , SMR device is the acoustic resonator. However, without the current source from deviating range of teachings present, other types sound resonator are included in is which may be appreciated. 1f also to 1b also shown in each of acoustic resonator stack of acoustic on a semiconductor substrate formed under the acoustic reflectors or acoustic mirror, e.g., includes a distributed Bragg reflector (DBR). Acoustic reflector the plurality of stacked acoustic reflector layer pair comprises, each acoustic reflector layer pair high acoustic impedance material acoustic impedance is stacked on layer formed of low acoustic impedance layer, said layer including a low acoustic impedance. In various embodiment, acoustic mirror in one or more layers acoustic impedance low acoustic impedance layer acoustic impedance of layers, it is more temperature compensation layers as in addition function making it possible to a material which, for example, acoustic stack negative coefficients (negative temperature coefficients) of different flows of material are configured so as to cancel the formed of a material having a coefficient PTC may be. Element as to, without the current source from deviating range of teachings present, same features are contemplated a generally, frames and/or locations of the various color having acoustic resonator comprised in which may be is appreciated. Also refers to surface 1b, for example, may be SMR an acoustic resonator (100B) the substrate (105) and (105) of second, an exemplary distributed Bragg reflector (DBR; 160) user presentation mechanism configured to present the acoustic reflector includes. DBR (160) the, substrate (105) electrically representative number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163) represented by a plurality of pairs of acoustic reflector layer pair includes the. Number 1 of acoustic reflector layer pair (161) formed of high acoustic impedance number 1 high acoustic impedance layer (161b) acoustic impedance low stacked on number 1 formed of low acoustic impedance layer (161a) includes. Number 2 of acoustic reflector layer pair (162) formed of high acoustic impedance number 2 high acoustic impedance layer (162b) acoustic impedance low stacked on number 2 formed of low acoustic impedance layer (162a) includes. Number 3 of acoustic reflector layer pair (163) high acoustic impedance formed of high acoustic impedance layer number 3 (163b) acoustic impedance low stacked on number 3 formed of low acoustic impedance layer (163a) includes. Lower (of number 1) electrode (115) the DBR (160), which is placed on a, layer of number 1 (120) in the insulating layer to (115) DBR (160) adjacent to, and the pads are arranged on. A piezo-electric layer (125) the lower electrode (115) and layer of number 1 (120), and the pads are arranged on. Upper (of number 2) electrode (135) the a piezo-electric layer (125), and the pads are arranged on. Lower electrode (115), a piezo-electric layer (125), and an upper electrode (135) the, , collectively, yield the acoustic resonator (100B) of acoustic stack composed of. Number 2 layer of (130) a color (140) for the top for receiving the electrode (135) adjacent to piezo-layers (125) but disposed on, as discussed to, acoustic-color or color hydrogens are either absent, or are positioned in a the other from a stack, layer of number 2 (130) the need to not go. Number 1, number 2, number 3 and low acoustic impedance layers (161a, 162a, 163a), and number 1, number 2, number 3 and high acoustic impedance layers (161b, 162b, 163b) the, for example, acoustic resonator (100B) 1/4 width of the resonance frequency natural of a corresponding respective wavelength thicknesses may be formed having. Generally, DBR (160) to the acoustic provided by the amount separation of adjacent acoustic impedance contrast between acoustic impedance of layers (contrast) and a DBR (160) is formed depends on the total number of the layers, the amount of contrast if a hash key, and supports a of the layers large acoustic better generates separation. In some embodiment, DBR (160) (contrasting) the apparent difference having acoustic impedance pair of insulating material is formed. In embodiment alternatively, low area and a high acoustic impedance layers the apparent or both difference having acoustic impedance may be, formed from metallic material. In described representative embodiment, DBR (160) 3 of pair message logging is displayed, and the acoustic impedance of layers, number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162) and number 3 of acoustic reflector layer pair (163) includes. Number 1 of acoustic reflector layer pair (161) number 1 during low acoustic impedance layer (161a) relatively low acoustic impedance of a material having a (this relatively soft material) is made from. For example, number 1 of acoustic impedance layer (161a) boron silicate glass (BSG), tetra-ethyl- [...] -silicate (TEOS), silicon oxide (SiOx) or silicon nitride (SiNx) (wherein x an integer), carbon doped silicon oxide (carbon-doped silicon oxide; CDO), chemical vapor deposition silicon carbide (CVD SiC), plasma enhanced CVD SiC (PECVD SiC), niobium molybdenum (NbMo), titanium (Ti) or may be is formed from aluminum. Number 1 of acoustic reflector layer pair (161) in low acoustic impedance layer number 1 (161a) paired with number 1 high acoustic impedance layer (161b) relatively high acoustic impedance of a material having a (this relatively hard material may) is made from. For example, number 1 high acoustic impedance layer (161b) tungsten (W), molybdenum (Mo), iridium (Ir), hafnium oxide (HfO2), aluminum oxide (AlO2), (diamond-like carbon; DLC) diamond or diamond-like carbon may be formed. Similarly, acoustic reflector layer pairs of number 2 and number 3 (162 and 163) of number 2 and number 3 low acoustic impedance layers (162a and 163a) the, each, relatively low acoustic impedance having a lead frame formed from material, number 2 and number 3 of acoustic reflector layer pairs (162 and 163) in number 3 and number 2 low acoustic impedance layers (162a and 163a), respectively pair of number 2 and number 3 of high impedance layers (162b and 163b) relatively high acoustic impedances for emulating is made from of materials having. Well as, in various embodiment, DBR (160) the, for example, without the current source from deviating range of teachings present specific design to achieve purposes, different numbers of reflector layer pair may include. Acoustic mirror of in several exemplary examples for the preparation techniques are presented to the American patent number 7,358,831 (15 April 2008) such as Larson 3 cell in described, a entirely said patent is integrated herein as a reference. Furthermore, in various embodiment, number 1, number 2, number 3 and low acoustic impedance layers (161a, 162a and 163a) are identical to each other is formed of material, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) is made from in mutually the same material. However, in alternative embodiment, without the current source from deviating range of teachings present, number 1, number 3 and/or number 2 low acoustic impedance layers (161a, 162a and 163a) different materials and/or can be formed with number 1, number 2 and/or number 3 high acoustic impedance layers (161b, 162b and 163c) of different materials may be formed from. In another, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) (for example, odd number of (odd) acoustic impedance layers) the carbon doped silicon oxide (CDO) can be and, on the other hand, corresponding pairs of number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b, 163b) (for example, (even) of excellent acoustic impedance layers) the silicon nitride (SiNx) can be and, x wherein. is an integer. Materials of such pairs are associated with advantages in the sense, for example, number 1 on a silicone wafer, which has been within a chamber in a depositing a CDO in, chamber through a door to migrate to and chamber number 2, number 2 in chamber depositing a silicon nitride on a wafer, the wafer by using a wafer into a chamber of number 1 again, such as by moving the, a single pair of layer grown machine. can contact. Furthermore, as in, relatively having a lower acoustic impedance DBR (160) of acoustic impedance layers (for example, number 1, number 2 and/or number 3 low acoustic impedance layers (161a, 162a and 163a)) (has PTC they are) at least one of, for example, acoustic resonator (100B) in addition to temperature compensation of material to give (for example, BSG, TEOS, SiO2, and/or NbMo) may be formed. A PTC layer acoustic impedance temperature compensation, for example, a piezo-electric layer (125), lower electrode (115), and an upper electrode (135) for including acoustic stack in differing materials. of the negative temperature coefficient of. Acceptable linear temperature to twist coupling coefficient order to maximize, temperature compensation acoustic impedance layer (are) temperature compensation and non acoustic impedance layer (are) relative. must be the optimization thicknesses. Temperature compensation the providing a blanket acoustic impedance, for example, presented to the American patent application number 14/092,077 Burak such as call (27 November 2013 application) is described by, is the entirely patent application is integrated herein as a reference. Furthermore, more temperature compensation layers of several exemplary examples, the footwear pieces such as fabrication techniques presented to the American Burak patent application number 13/766,993 call (14 February 2013 application) is described by, is the entirely patent application is integrated herein as a reference. As in, substrate (105) upper electrode from (135) acoustic provides for separation of the connection of an edge of a DBR (160) by the "dead-FBAR" substantially remove the. Furthermore, upper electrode modes and composite [...] evanescent wave (135) on the edge of a position in which the excitation from an edge exponential since the-elastically dampened, DBR (160) the (upper electrode edge and the lower electrode (115) between the recess and the edge of) upper electrode (135) of the area to be on the outside of the substrate complex mode and [...] evanescent wave (105). to bind to. In particular, also 1b a single sound resonator (100B). depicting a. Acoustic resonator (100B) additional acoustic resonators to a device having, for example, including 5-10 acoustic resonators including filter, DBR (160) of number 1, number 2 and number 3 of acoustic reflector layer pairs (161, 162, 163) the, other acoustic resonator of DBR of acoustic reflector layer pair is electrically isolated from a commercial-scale it is necessary, this will clear her one skilled in the art. For example, trench or other separation means DBR (160) around substrate (105) downward toward a etched. This in particular, formed of a metal the other acoustic resonator to provide electrical isolation from patterned (acoustic resonator (100B) external the etching) DBR (160) acoustic impedance layers including is may be often than in a wire channel. Lower electrode (115) the, for example, tungsten (W), molybdenum (Mo), iridium (Ir), aluminum (Al), pt (Pt), ruthenium (Ru), niobium (Nb), or hafnium (Hf) for including one or more electrically conductive of materials, such as a semiconductor processes be compatible with variety of metal may be formed from. In in various configurations, lower electrode (115) the, the same or different electrically conductive material of one or more layer 2 may be formed. Similarly, upper electrode (135) the, for example, tungsten (W), molybdenum (Mo), iridium (Ir), aluminum (Al), platinum (Pt), ruthenium (Ru), niobium (Nb), or hafnium (Hf) for including materials of electrically conductive, such as a semiconductor processes be compatible with variety of metal may be formed from. In in various configurations, upper electrode (135) are identical to each other or different electrically conductive material of one or more layer 2 may be formed. Furthermore, upper electrode (135) a construction defining and/or materials in the insulating layer to (are) (115) a construction defining and/or materials (are) equal to or different may be filled in the space. Substrate (105) the, for example, silicon (Si), gallium arsenic (GaAs), indium phosphide (InP), glass, sapphire, a semiconductor such as aluminum compatible with processes is made of a material which may be. A piezo-electric layer (125) the, for example, aluminum nitride (AlN), zinc oxide (ZnO), or zirconate titanate (PZT) acid such as compatible with semiconductor processes any of piezo-electric material may be formed. Number 1 of layer (120) the, for example, borosilicate glass (borosilicate glass; BSG) may be formed. Number 1 of layer (120) acoustic resonator (100B) of the idea that to function but that it will not required, various present by using the mask pattern. benefits. For example, layer of number 1 (120) the presence of a acoustic resonator (100B) of structural for improving stability of prone and subject, growth of subsequent layers positioned above the backlight assembly to display. Planarization of potential examples additional benefits such as presented to the American Burak patent application disclosure number 2013/0160534 call is presented in which, a entirely patent application disclosure is is integrated herein as a reference. 1b also again refers to surface, acoustic resonator (100B) layer of the number 2 (130) and an upper electrode (135) disposed on color (140), and an upper electrode (135) (bottom portion) lower portion of a frame disposed about a perimeter (145) further includes a. But that it will not shown, upper electrode (135) on the, moisture, etchant (corrosive), contaminants, debris (debris) or the like from the environment including acoustic stack all layers to isolate the passivation layer having thick enough so that, may also be present.. Color (140) holds the main an active region that substantially surrounds a predetermined thickness and width may be forming insulating material. A insulating material, for example, borosilicate glass (BSG), silicon dioxide (SiO2), carbon doped silicon oxide (CDO), silicon nitride (SiN), silicon carbide (SiC), aluminum nitride (AlN), zinc oxide (ZnO), aluminum oxide (Al2 O3), diamond, diamond-like carbon (DLC), or zirconate titanate (PZT) kite acid may include. Alternatively, color (140) the tungsten (W), molybdenum (Mo) or iridium (Ir) such as may be, formed from metallic material. Advantages of a metal material the, relatively high acoustic impedance and relatively thin thickness (for example, hundreds angstroms) color (140) includes may be loaded with. Furthermore, color (140) the collar region spurious mode addition of the potent inhibition of the (biased) are biased to provide. Furthermore, numerical simulation are, metal color (140) top electrodes (135) of at the edges of the alignment requirements enabling the easy particulars. suggesting a. Frame (145) the, for example, copper (cu), molybdenum (Mo), aluminum (Al), tungsten (W), iridium (Ir), borosilicate glass (BSG), carbon doped silicon oxide (CDO), silicon carbide (SiC), silicon nitride (SiN), silicon dioxide (SiO2), aluminum oxide (Al2 O3), aluminum nitride (AlN), zinc oxide (ZnO), kite acid zirconate titanate (PZT), diamond or diamond-like carbon (DLC) such as at least one conductive or insulating material may be formed from. Number 2 layer of (130) the, for example, borosilicate glass (BGS) may be formed. In particular, layer of number 2 (130) the use of high acoustic impedance material, color (140) in the region of, over stack acoustic of the active region vertical modal energy distribution and, and a barrel adaptor closely match the energy distribution in the modal vertical over stack is prone to generation of. This, acoustic resonator (100B) (Fs) frequency series resonator frequencies nearby color (140), in the region of evanescent wave (eTE1) [...] thickness longitudinal vertical mode modal energy distribution in active region electrically excited piston mode profile between that at the modal energy distribution allows matches for close. ETE1 mode then, acoustic resonator (100B) supported by structure other propagation modes are and and do not bind, beam printer interface active region a direction away from may be loaded with exponential. Color region that may eventually this the overall reduced scattering loss or presented as a (Rp) parallel resistors may be an improved specific capacities under significant (Q) MCM and may generate. Furthermore, color (140) and passivation layer use of higher acoustic impedance material similar performance is improved due to reasons in addition to which a component can contribute to the. Well as, the current source from deviating range of teachings present without acoustic resonator (100B) of said and other feature in incorporation of the other materials may be. Both arrow (double-headed arrow; 152) has a voice resonator (100B) and active topography exhibiting regions of, vertical dashed lines are the main active region (152) exhibits boundary of. The border a, upper electrode (135) the main active region (152) that extend beyond the boundary of connection side (101) except that the for, upper electrode (135) matches the edge of. Both arrow are (154 and 156) acoustic resonator (100B) and represent areas and frame each color of, corresponding vertical dashed lines are exhibits boundaries of these regions. Also, such as 1a of upper angle at a distance when viewed in the, above regions their boundaries are apodized can. Also 1b as illustrated, color (140) holds the main active region (152) boundary of, an inner edge as to ALIGN substantially with having, frame (145) the same boundary as to ALIGN substantially with the outer edge thereof that has. In examples of 1b also, active region when main (152) have lower and upper electrodes (115 and 135), a piezo-electric layer (125) between the does include overlap of maximum, the reason is that an upper electrode (135), being at the edge is connected for higher rigidity exemplary and acoustic resonator (100B) the operative frequency range of electrical impedance in any significant manner so as to modify the intended is since no. However, active region when main (152) of at the edges of the lower electrode (115) of the endpoint, cross direction due to unfavorable change in acoustic impedance in any abrupt profile significant acoustic energy leads to the loss may be. Said energy loss have a top electrode (135) connected edge (101) below lower electrode of (115) further extends an color (140) by (mass-loading) loading mass to may be preventing. Acoustic resonator (100B) during the normal operation of, ladder filter as part of, for example, lower electrode (115) to the input terminal of the input electric signal inputted into the may be applied in the upper electrode (135) the connected to the output terminals may be. Input electrical signal that induces vibrations in an active region a main time variant (time-varying) voltage. Upper electrode that may eventually is vibrated (135) of the electric signal outputted from an output terminal generates. The input and output terminals of, 1b also as shown to the main active region (152) connection extending away from and lower electrodes are downward through edges (115 and 135) may be connected to. For example, from upper surface view, these connections insure edges, also 1a apodized is the same as that illustrated 5 shape to extend exteriorly of the bumper frame may be it is shown. Acoustic resonator (100B) of input and output terminals are, for example, ladder filter other dots forming the acoustic resonator appropriate a terminal connectable to the. Electrically excited piston mode an upper electrode (135) is end at the edge of. Upper electrode (135) structural discontinuity thereof in edge of the main active region (152) and a peripheral region between significant in cutoff frequency that exhibits in a contraceptive vaccine, as well, the main same active region (152) and periphery areas both transversely modes caused the excitation for interfaces between those regions in suitable grit speed and stress allows the continuity of components. Piston this undesirable mode of sound energy in laying eggs and acoustic resonator (100B) result of electrically responsive of may be brought into conformal degradation of its. However, color (140) holds the main active region (152) of replacement includes external provides loading mass for lowering, acoustic resonator (100B) (laterally) transversally over a more uniform cutoff frequency. to create a profile. Similarly, frame (145) frame region in use which inhibits the electrically excited piston mode, propagation in cross direction it (evanescent wave [...] and composite) unique modes in the alternatively resonator (index in) inhibit, amount effects are acoustic resonator (100B) improves simultaneously each operation. In other words, of acoustic resonator (100B) an improvement performance, and the frame mismatch cutoff frequency (145) a main generated by active region (152) between frame region with the other parts of mismatch by at least one of acoustic impedance can be. While, as discussed in on, DBR (160) acoustic resonator (100B) vertical direction of (also 1b depicted coordinate system in y-dimensional) generally. for, relieving acoustic losses. DBR (160) principle operation of, incident acoustic wave position of an opposite surface of the interference in, direction of propagation through the acoustic stack (is when camera, lower electrode (115) and number 3 low acoustic impedance layer (163a) a direction away from interface between) in amplitude in their entirety-pipes is exponentially due to the fact that the in the form of.. Generally, amplitude of such beneficial exponential attenuation, number 3 low area and a high acoustic impedance layers (163a and 163b) as well as, DBR (160) for including any additional acoustic impedance layers (for example, number 2 low area and a high acoustic impedance layers (162a and 162b), and number 1 low area and a high acoustic impedance layers (161a and 161b)) of acoustic wave enter and thickness of 1/4 wavelength LED setting structure with a 90 back equal to or less odd back approximately equal to the. only when. DBR stack in the bottom of (is when camera number 1 high acoustic impedance layer (161b) and the substrate (105) at the interface between the), amplitude are small in size, thus, substrate (105) of sound energy in to, and calculates radiation negligible interference is. In other words, DBR (160) a light beam incident to the acoustic energy reflected back and a small acoustic energy only substrate (105) to a. In particular, DBR (160) of beneficial reflection characteristics are generally of in a limited range with of frequencies, of the incident pulse polarization effects and specific propagation of in a limited range with respect to angles.. Actual cases, the filter bandwidth of frequency range of a plurality of given by energised in an active region are eigenmode, various acoustic impedance the optimized thickness of layers and the numerically are found. In addition as in, 3 one of stacked acoustic reflector layer pairs (for example, number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163)) the use of and there has only illustrative, DBR (160) the, without the current source from deviating range of teachings present, 3 acoustic reflector layer pair than they possibly include more or less may be loaded with. DBR (160) is provided so as to drive an acoustic reflector layer pair a reflective performance expected number of (pairs and/or more layers preferably resulted in smaller dimensions) and then receives a response from the and processing issues (pairs and/or layers less resulted in smaller dimensions mirror growth and post processing is further inexpensive and simpler.) efficient tradeoff of is determined by (tradeoff). DBR (160) provided by acoustic separation of excited eigenmode of the amount, each acoustic reflector layer pair of adjacent low area and a high acoustic impedance contrast between acoustic impedance of layers depends on the time in addition, as discussed in on, contrast of a greater amount with vertical polarization is dominant of eigenmode. as to produce acoustic better. In one embodiment, DBR (160) of publicly known method of acoustic impedance layers are deposited through either the substrate, making use of the materials (105) is provided over the. For example, number 1 high acoustic impedance layer (161b) a substrate (105) may are formed in at least, low acoustic impedance layer number 1 (161a) the number 1 high acoustic impedance layer (161b) may be formed on. In other embodiment, low acoustic impedance layer number 1 (161a) a substrate (105) and may be formed directly upon, the opposite of the layer pair of either a single layer provides. Additional number 2 and number 3 of acoustic reflector layer pairs (162 and 163) the number 1 low acoustic impedance layer (161a) sequentially formed on a can be formed with the. DBR (160) of various layer of using publicly known method can be manufactured, such as cell Larson 3 a one example thereof presented to the American patent number 7, 358, 0831 call (15 April 2008) in described, a disclosure thereof is integrated herein as a reference entirely. Generally, acoustic resonator (100B) main active region (152) have a top electrode air management in (0 essentially of acoustic impedance material) and the lower electrode acoustic mirror is defined by the presence of. Therefore, normal stress components have a top electrode in and 0, DBR (160) of adequate magnitude in material option of, normal stress components (lower electrode (115) and number 3 low acoustic impedance layer (163a) between) lower boundaries, resulting low. A method of high stress state and measures the audio, number 3 low acoustic impedance layer (163a) thickness of, DBR (160) is possible to design motor and modes in the (for example, is when electrically driven piston mode and eTE1 eigenmode) of 1/4 wavelength LED setting structure with a 90 the convexity on the. when a rationally. DBR (160) to, a similarly configured acoustic impedance layers (for example, number 1 and number 2 low acoustic impedance layers (161a and 162a)) adding number, lower electrode (115) and low acoustic impedance layer number 3 (163a) further lowering the normal stress on the contact surfaces between the, ideal state of stress 0 allows the train nearer to. However, as in, electrically driven piston mode and eTE1 eigenmode lower vertical stress DBR (160) for including acoustic impedance all thicknesses of layers realized by means of a proper choice of the but, (active region N. to a method which by combining a modal in edge) mechanically or electrically excited other modes it DBR (160), which may be not necessarily, these of modes in the leakage through the real (leakage) may be improved (the expected that energy constraints by extending in that energy constraints that is less than a). For example, relatively thick number 3 low acoustic impedance layer (163a) number 2 generally presence of difference of thickness shear mode (second order thickness shear mode; TS2) lower the cut-off frequency, that may eventually this parallel resonant frequency (Fp) in color by increasing shear in eTE1 (140) supported by the weak bindings eTE1 of modes in the is along. Weak bond thereof, relation to composite signals color described on, propagation modes are stronger excitations and increased radiation loss as to cause.. In other words, DBR (160) in the area for resonance TE1 TS2 N. energy acoustic proximity resonance of a it is also possible to increase the leakage. In order to solve the problem, a thinner than the wavelength of the 1/4 low acoustic impedance layer number 3 (163a) and may be used, this DBR (160) that may eventually vertical in the direction of overall reflectance a reverse can also decreases between mechanism leakage of. 2 a balance suitable to use the numerical simulation and experiment is determined usually by. Number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a), and number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) each of the, the frequency range of operation of filter according to materials used in the and, each, approximately 1000 Å to approximately 50000 Å corresponding range of has thicknesses. As in, DBR (160) for including low area and a high acoustic impedance of both layers are formed on the out of materials selected in basic mode of 1/4 wavelength and substantially as selected operational frequency (for example, the series resonance frequency is) are excited in. For example, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) (the series resonance frequency is) about each of the plurality of sectors includes 800MHz TEOS for operation within each inclusion, number 1, number 2 and number 3 low acoustic impedance layer (161a, 162a and 163a) micro m each of the has a thickness of approximately 2.6. In this example, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) each of the, order to operate 800MHz having a thickness of approximately 3.2 micro m may include SiN. In particular, DBR (160) thickness of layers all acoustic impedance (for example, 1/4 wavelength layer are substantially thinner too the for processing a) out of materials selected a fundamental acoustic resonator eigenmode of 1/4 wavelength LED setting structure with a 90 back (for example, 5 times) can be selected as. 1c also refers to surface, acoustic resonator (100C) the, frame (145) except that the for the formation of, acoustic resonator (100B) and. a. I.e., frame (145) is (plane upper surface of to provide electrodes corresponding integrally formed in an) composite frame the sound processor resonator (100B) alternatively from, acoustic resonator (100C) upper electrode (135') frame (145) is the an add-on frame. An add-on the frame has an upper electrode (135') of a substantially non planar upper surface profile is appear. Generally, only a passivation layer usually upper electrode (135 ') to be formed on the because the, upper electrode (135') of such non-planar profiles acoustic resonator (100C) of structural robustness any significant influence degree. does not. On the other hand, to the acoustic resonators discussed to (100D to 100F) in frames (150 and 150') the, acoustic resonator (100C) for those frames composites included in the present invention, electrodes (115) of an upper surface substantially planar is current directions generated from profiles. Piezoelectric layers without quality of void (125) and an upper electrode (135') to form, acoustic resonator (100C) lower electrode of (115) these substantially planar will preferred are the top. Some additional different frame of configurations in a generally the tradeoffs, for example, American is from 600 to 3,000 in terms is described call patent application number 13/663,449. Well as, an add-on frame (145) the structure of, without the current source from deviating range of teachings present, acoustic resonators (300D to 100D) included in may be applied to frame. Furthermore, for example, 28 February 2013 application as a American patent application number 13/781,491 call frame structure of a further active agent disclosure, such other frames configurations (an add-on and composite) is, without the current source from deviating range of teachings present, may be integrated. Alternatively, acoustic resonator (100C) the substrate (105), DBR (160) disposed on the substrate, DBR (16) the lower electrode (115) and the lower electrode (115) DBR (160) adjacent to disposed on layer of number 1 (120) includes. A piezo-electric layer (125) in the insulating layer to (115) and layer of number 1 (120), which is placed on a, upper electrode (135) and layer of number 2 (130) the a piezo-electric layer (125), and the pads are arranged on. DBR (160) the, representative number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163) user presentation mechanism configured to present the stacked acoustic reflector layer includes the a plurality of pairs of the pairs of. Number 1 of acoustic reflector layer pair (161) a substrate (105) on high acoustic impedance layer number 1 (161b), and number 1 high acoustic impedance layer (161b) stacked on low acoustic impedance layer number 1 (161a) includes. Number 2 of acoustic reflector layer pair (162) the number 1 low acoustic impedance layer (161a) number 2 stacked on high acoustic impedance layer (162b), and number 2 high acoustic impedance layer (162b) stacked on number 2 low acoustic impedance layer (162a) includes. Number 3 of acoustic reflector layer pair (163) the number 2 low acoustic impedance layer (162a) number 3 stacked on high acoustic impedance layer (163b), and number 3 high acoustic impedance layer (163b) number 3 stacked on low acoustic impedance layer (163a) includes. On as discussed in, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) relatively low acoustic impedance having a lead frame formed from material, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) relatively high acoustic impedance is made from of materials having layers. Less or more acoustic reflector layer pair are included may be. Also 1d, 1e and 1f has a voice resonator also (100B) additional variations. describe the. In particular, in 1d also, acoustic resonator (100D) the, frame (145) on the frame the invention eliminates the need for (150) this lower electrode (115) that it is positioned lower half of the exception of a, acoustic resonator (100B) in substantial equal to. In 1e also, acoustic resonator (100E) the, upper electrode (135) frame (145) in addition to, frame (150) this lower electrode (115) the invention also relates to a except that the, acoustic resonator (100B) in substantial equal to. Also in 1f, acoustic resonator (100F) the, upper electrode (135) frame (145) in addition to, lower electrode (115) upper portion of the frame (top portion) (150') is provided except that the, acoustic resonator (100B) in substantial equal to. Well as, acoustic resonators (100C to 100F) each of the, on as discussed in, number 1, number 2 and number 3 of acoustic reflector layer pairs (161, 162 and 163) DBR (160) having includes. Acoustic resonators (100D to 100F) in frames (150 and 150') acoustic resonator (100B) frame of (145) while the benefits similar to, their performance and manufacturing process are due to different positions will somewhat varies. Different frame of configurations in general some the tradeoffs, for example, American-mentioned said is described call patent application number 13/660,941. In various embodiment, a piezo-electric layer (125) in piezoelectric coupling coefficient are (e33) in order to increase the, a piezo-electric layer (125) the, for example, scandium (Sc), yttrium (Y), such as erbium or (La) [...] (Er) at least one rare earth element "doped" may be. Electromechanical coupling coefficient conditioner acoustic resonator doping (Kt2) lowering of at least a portion of the offset, which may be, this DBR (160) caused by penetration of acoustic energy to may be. Electromechanical coupling coefficient (Kt2) in order to improve the at least one piezoelectric layers doping a rare earth element into the defect exists is included in examples such as American Bradley patent application number 13/662,425 call (27 October 2012 application), and the defect exists is included in such as American Grannen patent application number 13/662,460 call (27 October 2012 application) are provided by, patent application is their whole is integrated herein as a reference. Well as, of one or more rare earth elements into the doped with the dopant, piezoelectric layers, also recognition ratio by capturing and referring to 3d also to 1b embodiment forms described embodiment including any of a variety of types may be applied. 2d also to 2a also various subcarriers of frame and the collar including are alignment, according to types representative embodiment, acoustic resonators cross-sectional drawing. are exemplified. The 2d also to 2a also, each, other types according to exemplary embodiment, acoustic resonators (200D to 200A) of their cross-sectional drawing. Acoustic resonators (200D to 200A) the, color (140) and bottom electrodes achieved due to the omission (115), a piezo-electric layer (125) between color (240) except that the is not formed, each, acoustic resonators (100B to 100F). similar to. Color (240) has a voice resonators (100B to 100F) color (140) and a benefits while the, color (240) on different locations and manufacturing performance gets is assigned a somewhat varies such. Also refers to surface 2d also to 2a, for example, an acoustic resonators may be SMR (200D to 200A) each of the, substrate (105), substrate (105) DBR (160) disposed on, DBR (160) the lower electrode (115, 215), and the lower electrode (115, 215) DBR (160) adjacent to disposed on layer of number 1 (120) includes. A piezo-electric layer (125) in the insulating layer to (115, 215) and layer of number 1 (120), which is placed on a, upper electrode (135, 235) the a piezo-electric layer (125), and the pads are arranged on. DBR (160) the, substrate (105) electrically, representative number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163) user presentation mechanism configured to present the, a plurality of pairs of the pairs of acoustic reflector layer includes the. Number 1 of acoustic reflector layer pair (161) formed of high acoustic impedance number 1 high acoustic impedance layer (161b) acoustic impedance low stacked on number 1 formed of low acoustic impedance layer (161a) includes. Number 2 of acoustic reflector layer pair (162) formed of high acoustic impedance number 2 high acoustic impedance layer (162b) acoustic impedance low stacked on number 2 formed of low acoustic impedance layer (162a) includes. Number 3 of acoustic reflector layer pair (163) high acoustic impedance formed of high acoustic impedance layer number 3 (163b) acoustic impedance low stacked on number 3 formed of low acoustic impedance layer (163a) includes. In one embodiment, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) at least one of the, low acoustic impedance layer least lower electrode (115, 215), a piezo-electric layer (125) and/or upper electrode (135, 235) of negative coefficients and developing the photoresist PTC (positive temperature coefficient) temperature compensated material can be in that, more temperature compensation layers to operate as may be configured. Exemplary for purposes, acoustic resonators (200D to 200A) upper electrode (235) to frame (245) film, and a lower electrode is (215 and 215 ') frames are formed (250 and 250') the, each, acoustic resonators (100B to 100F) upper electrode (135) to frame (145) film, and a lower electrode is (115 and 115 ') frames are formed (150 and 150') but constructing different from the user, frames (245, 250 and 250 ') the functionality of a frames (140, 150 and 150') as set out on in connection with substantially equal to. to be noted by. In particular, also 2a, the upper electrode is provided on an also 2c and 2d (235) the consolidated non-cross features (frame (245)) 2 to provide two different metallic materials including composite electrode. Similarly, also 2b, 2c and 2d also of the lower electrode so that a in (215, 215 ') also in addition, laterally integrated features (frames (250, 250')) 2 to provide two different metallic materials including composite electrode. Generally, frame (245) the a piezo-electric layer (125) an inner electrode formed on formed on the internal electrode layers layer external electrode layer including an. External electrode layer therein and is of a material resistant to number 1 material of the number 1 electrode layer is of a material resistant to number 2, wherein, the material causing increased narrowing of number 1 (upper electrode (235) in the bottom of) frame (245) number 2 inner electrode layer to provide converted outer electrode layer effectively of. extending. Number 2 of a lower (high) number 1 to form-rate frames than that of the material of the high (low) may be sonic. For example, a low rate relative to the frame, number 2, the material causing increased narrowing of molybdenum (Mo) or aluminum (Al) and can be formed with the number 1, the material causing increased narrowing of tungsten (W) but can be formed with the, outside of the range of the teachings present without may incorporation of the other materials. Frame (250) the a piezo-electric layer (125) formed under the an inner electrode layer and inner electrode layer formed under the external electrode layer including an. Inner electrode layer of a material resistant to number 1 the cover is attached to the body electrode layer materials of the stator is formed of a number 1 and number 2, wherein, the material causing increased narrowing of number 1 (lower electrode (215) in the bottom of) frame (250) to provide external electrode layer of material number 2 therein by. extending effectively of electrode layer. Similarly, frame (250') the a piezo-electric layer (125) an inner electrode layer formed under the internal electrode layers formed under the external electrode layer including an. External electrode layer of a material resistant to number 1 therein and is electrode layer materials of the stator is formed of a number 1 and number 2, wherein, the material causing increased narrowing of number 1 (lower electrode (215 '), on an upper portion of the) frame (250') number 2 inner electrode layer to provide converted outer electrode layer effectively of. extending. Frames are, without the current source from deviating range of teachings present, composite electrode formed by laterally an integrated of features across a other types and positions may be realized by. Laterally integrated has a complex features 25 October 2012 as examples of electrodes a American patent application number 13/660,941 call application is provided, is the entirely patent application is integrated herein as a reference. Furthermore, different frame of configurations in general some the tradeoffs, for example, American-mentioned said is described call patent application number 13/663,449. Well as, without the current source from deviating range of teachings present, frames (245, 250 and 250 ') on structures are of resonators acoustic discussed in (100E to 100B) and may be applied to, frames (145, 150 and 150') of structures are acoustic resonators (200D to 200A) may be applied to. Alternatively in embodiment, acoustic resonators (200D to 100B) of a variety of a plurality of features include, color or frames non-both, (positions of various types or) color or (positions of various types or) one or more frames including one of in various combinations may be provided. For example, the 3d also to 3a also, each, other types according to exemplary embodiment, acoustic resonators (300D to 300A) of which are cross-sectional drawing, they are, on another exemplary discussed in with features, including colors or frame. Also refers to surface 3a, acoustic resonator (300A) the, (a frameless,) DBR (160) in addition to color (140) including only the exception of a point, acoustic resonator (100B), which is similar to a representative SMR is. Similarly, 3b also refers to surface, acoustic resonator (300B) the, (a frameless,) DBR (160) in addition to color (240) including only the exception of a point, acoustic resonator (200A), which is similar to a representative SMR is. 3c also refers to surface, acoustic resonator (300C) the, (color-free) DBR (160) in addition to frame (145) including only the exception of a point, acoustic resonator (100B), which is similar to a representative SMR is. Similarly, also refers to surface 3d, acoustic resonator (300D) the, (color-free) DBR (160) in addition to frame (150) including only the exception of a point, acoustic resonator (100D), which is similar to a representative SMR is. Acoustic resonators (300D and 300C) similar additional examples, a is from 600 to 3,000 in terms, such as American the defect exists is included in call patent application number 13/767,754 Burak (14 February 2013 application) in described, is the entirely patent application is integrated herein as a reference. Well as, .the persons can just examples of these features. Other features other combinations of features and teachings are seen without the current source from deviating range of may be integrated. For example, acoustic resonators (300D and/or 300C) the, alternatively, frame (150 ') only, frames (145 and 150) both, or frames (145 and 150') contains both, may be loaded with. Furthermore, frames (for example, frames (145, 150, 150 ', 245, 250, 250')) (composite or an add-on) and colors (for example, colors (140, 240)) of, as discussed in on, a variety of different alignments and/or type are, without the current source from deviating range of teachings present, may be integrated. DBR are, frames, and color are similar to benefits discussed in while the benefits, due to different positions and combination varies such is assigned a somewhat and manufacturing performance. Figure 4, frames or colors which do not have when compared to of acoustic resonator, a representative embodiment according to types, presence of frames and/or color, and frame width (Rp) parallel resistors as a function of is a graph is exemplified. I.e., Figure 4, acoustic resonator acoustic mirror (for example, DBR (160)) for comparison with a for purposes, simulated parallel resistors (Rp) station requests a forward table frame (frame when an acceleration force is present) as well as, simulated parallel resistors (Rp) station requests a forward table frame (frame and color in the presence of) a is exemplified. Therefore, Figure 4, DBR (160) having an acoustic resonator frame (145) and color (140) adds, frame (145) width of a altering occurs as a result, a user presentation mechanism configured to present parallel resistors (Rp) such as seen in the exemplary variations of the in performance. Also 4 refers to surface, parallel resistors (Rp) y axis is represented by the, frame width. indicated by shaft x. Frame (145) and color (140) the respective thicknesses of the are, as discussed to, is kept constant. Therefore, parallel resistors (Rp) values are frame (145) and/or color (140) presence or absence of, and frame (145) varies such, such as function of width of. In of Figure 4, acoustic resonator (for example, acoustic resonator (100B)) to (Rp) parallel resistors are dimensions of applicants by a vacuum chamber. In particular, lower electrode (115) having a thickness of approximately 3800 Å is formed of Mo, a piezo-electric layer (125) having a thickness of approximately 9300 Å AlN is formed, upper electrode (135) having a thickness of approximately 3250 Å Mo the stator is formed of a, having a thickness of 2000 Å approximately passivation layer (upper electrode (135) on) AlN is formed with. With respect to alignment, lower electrode (115) the outer edge of upper electrode (135) substantially external edge of m micro 14. extending. Passivation and layer are, for example sputtered SiN is formed with. Furthermore, in a logic device is described, DBR (160) the 3 one of stacked acoustic reflector layer pairs (for example, number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163)) includes. Acoustic reflector layer pairs of number 1, number 2 and number 3 (163 and 161, 162) having a thickness of approximately 5800 Å each of the plasma enhanced chemical vapor deposition SiC formed low acoustic impedance layer (for example, each, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a)) includes. Furthermore, number 1, number 2 and number 3 of acoustic reflector layer pairs (161, 162 and 163) each of the tungsten (W) having a thickness of approximately 5500 Å is in acoustic impedance layer (for example, each, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b)) includes in addition a, thereon number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) is respective is. Low area and a high acoustic impedance layer thickness of the are, a particular scenarios to learn the best parallel resistors (Rp) is optimized for. Acoustic of a reflector it is may optimize layer acoustic impedance, for example, the defect exists is included in such as American Burak patent application number 13/767,754 call (14 February 2013 application) in described, is the entirely patent application is integrated herein as a reference. Therefore, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) 2.75GHz about each of the operated at a frequency series resonator may be designed to, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) each of the about 2.4GHz operates at a frequency series resonator may be designed to. Describing components which Figure 4 3, a corresponding each represented by at value Rp.. In particular, curve (410) the DBR (160) but that does not have a color frame and bare (bare) resonator (SMR) Rp of and exemplary values, a baseline, functioning as a for compared. The design comprises frame (145) 3c Figure free shown in acoustic resonator (300C) generally corresponding to.. Curve (420) the DBR (160) and frame (145) that does not have a color the Rp the exemplary values of acoustic resonator, also this 3c shown in acoustic resonator (300C) generally corresponding to.. Curve (430) the DBR (160), frame (145) and color (140) a sound of the resonator the exemplary values Rp, this acoustic resonator (100B) generally corresponding to.. (If any) frame (145) have a top electrode (135) receives signal with transmission by using Mo in the bottom of and composite frame formed AlN, has a thickness of 350 Å approximately. Frame (145) has a width of 0 to approximately 5.0 micro m varies such up. (If any) color (140) of an upper electrode (135) 9450 Å sputtered on and approximately the thickness of formed SiC (i.e., upper electrode (135) and. thicker passivation layer about 4200 Å) and approximately 11.5 micro m the width of. Also 4 refers to surface, all to acoustic resonator features (DBR (160), frame (145) and color (140)) comprising combinations of the, parallel resistors (Rp) value of when measured by a acoustic resonator well-defined as to enhance the performance of the.. For example, curve (410) the, as expected (small changes in the are a finite simulation grid due to simulation in relates to numerical errors), parallel resistors (Rp) and essentially in ohmic about 500 to stay exhibits constant throughout the growth of the main. Curve (420) the, frame (145) adding is, for example, frame when width of about 5.0 micro m, parallel resistors (Rp) ohmic about 1700 about 500 about ohmic it conceives until. indicative of increased by 3. Curve (430) the, color (140) is the adding of, frame (145) when the width of is approximately 4 micro m, parallel resistors (Rp) ohmic about 6100 ohmic back to about 1700 it conceives until by about 3.5 (parallel resistors (Rp) overall about 12 by a factor of) exhibits to increase the amount of. Curve (430) the, color (140) is adding only, also 3a (frame (145) and the amorphous layer not having any, 0 and the same frame by the width of a also shown in the 4) as shown in, about 3600 ohmic until ohmic 500 about 7 times by more than parallel resistors (Rp) exhibits further to increase the amount of. Should be understood by one skilled in the art as, types according to various embodiment, frame (145) and/or color (140) a sound of the resonator parallel resistors (Rp) values are, DBR (160), an acoustic having only an when compared to publicly known (without reduction in significant bandwidth) increased. Also representative embodiment types according to 3a Figure 5 shows a sound resonator consisting of tungsten (W) thickness and color of electrically floating, electrically-ground-transfer as a function of the energy of parallel resistors (Rp) is a graph is exemplified. I.e., also Figure 5 shows a, for example, such as it became at the time of to 3a also, electrically floating, electrically-ground-transfer are (for example, color (140)) and, acoustic mirror (for example, DBR (160)) having thickness color of acoustic resonator (Rp) parallel resistors simulated and compared examples of.. These graphs of purposes may include, color (140) in order to modify the thickness of electrically grounding applications of the collar occurs as a result parallel resistors (Rp) a user presentation mechanism configured to present seen in the variations of the in performance such as by a rope. exemplary. Also 5 refers to surface, parallel resistors (Rp) is expressed by the y axis, color thickness. indicated by shaft x. Therefore, parallel resistors (Rp) color values are (140) thickness of, and color (140) or acceptably the floating is shown as a function of whether the ground. In of Figure 5, acoustic resonator (for example, acoustic resonator (300A)) has a high degree of parallel resistors (Rp) to applicants by a vacuum chamber. In particular, lower electrode (115) having a thickness of approximately 3800 Å is formed of Mo, a piezo-electric layer (125) having a thickness of approximately 9300 Å AlN is formed, upper electrode (135) having a thickness of approximately 3250 Å Mo the stator is formed of a, having a thickness of 2000 Å approximately passivation layer (upper electrode (135) on) AlN is formed with. With respect to alignment, lower electrode (115) the outer edge of upper electrode (135) substantially external edge of m micro 14. extending. Passivation and layer are, for example sputtered SiN is formed with. Furthermore, in, DBR (160) the 3 one of stacked acoustic reflector layer pairs (for example, number 1 of acoustic reflector layer pair (161), number 2 of acoustic reflector layer pair (162), and number 3 of acoustic reflector layer pair (163)) includes. Acoustic reflector layer pairs of number 1, number 2 and number 3 (163 and 161, 162) having a thickness of approximately 5800 Å each of the plasma enhanced chemical vapor deposition SiC formed low acoustic impedance layer (for example, each, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a)) includes. Furthermore, number 1, number 2 and number 3 of acoustic reflector layer pairs (161, 162 and 163) each of the, tungsten (W) having a thickness of approximately 5500 Å is in acoustic impedance layer (for example, each, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b)) includes, thereon number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) is respective is. Low area and a high acoustic impedance the thickness of the layer, as discussed in on, a particular scenarios to learn the best parallel resistors (Rp) is optimized for. Therefore, number 1, number 2 and number 3 low acoustic impedance layers (161a, 162a and 163a) about each of the series resonator 2.75GHz may operated at a frequency, number 1, number 2 and number 3 high acoustic impedance layers (161b, 162b and 163b) each of the about 2.4GHz series resonator may operated at a frequency. Describing components which Figure 5 2, a corresponding each represented by at value Rp.. In particular, curve (510) the DBR (160) and color (140) a sound of the resonator the exemplary values Rp, this acoustic resonator (300A) generally corresponding to and, wherein color (140) is floating are electrically. Curve (520) the DBR (160) the same color (140) a sound of the resonator Rp the exemplary values, wherein color (140) is ground are electrically (or lower electrode (115) is shorted to). Respect to curve amount, color (140) on the upper flattening and passivation layers formed of combined 5960 Å approximately 11.5 micro m of the width of W is made from. Also 5 refers to surface, acoustic resonator DBR (160) to color together are incorporated and (140) electrically ground of the soffit, acoustic resonator well-defined as enhancing performance of.. Generally, curves (510 and 520) in by comparing the, color for electrically floating (140) for parallel resistors (Rp) to color thickness and electrically grounded color (140) for parallel resistors (Rp). similar very thickness color to. However, replacement includes the control unit a piezo-electric layer (125) of since the down shift connects the inner (curve (520)), amount curves (510 and 520) respect to each other to both arrow (530) represented by is, the Image data is shifted by an approximately 600 angstroms. Should be understood by one skilled in the art as, SMR of parallel resistors (Rp) to color thickness having color insulating characteristics have an FBAR. are similar to those of. Curves (510 and 520) deep in the (dip) (Rp) parallel resistors in each of the variable-length, SMR (for example, acoustic resonator (300A)) of parallel resonant frequency (Fp) with color (140) cut-off [...] relates to alignment. Color (140) by as the thickness of said layer increases, curves (510 and 520) represented by the parallel resistors (Rp), SMR series resonator frequency (Fs) and a color (140) point is substantially aligned with a light of replacement includes the control unit, until it reaches a the peak their initially at similarly increased. Color (140) increases continues thickness of, parallel resistors (Rp) the main active region in each color mode and piston in eTE1 mode the increased engagement between the, parallel resistors (Rp) the. decrease smoothly. In particular, electrically ground-transfer (140) (curve (520)) the, color for electrically floating (140) than roughly 10 to 15%. calculates a better parallel resistors (Rp). Generally, color for electrically floating (140) the outside region of the upper electrode mass is controlled so that it does not generates has a simple structure. In particular, color for electrically floating (140) of an upper electrode (135) connection edge or must be removed from above, or via diced essentially acoustic resonator (300A) the body extended in the lateral, for improving performance instead will reduces a actually. Furthermore, color for electrically floating (140) the, the same reason, all the non connection area on upper electrode (135) overlap with. transistors. In contrast, electrically ground-transfer (140) (this guard rings may be referred to in addition) the mass loading in addition to providing, upper electrode (135) on the outside of. generating a electric field 0. However, electrically ground-transfer (140) has lower electrode (115) connected to the requires further processing, this will nontrivial twiddle factors and her one skilled in the art. Described in said embodiment, DBR of a high and low acoustic impedance layers, color and frames are, generally, using processing techniques of the existing method may be formed with, deposited as examples thereof, sputtering, etching, rear of a variety of shapes including. Furthermore, the described embodiment form and associated in various manners are manufacturing method may be modified, will clear her one skilled in the art. According to various embodiment form, of one or more frames codes a cations in combination with color and/or electrically excited piston mode for DBR including SMR provided to minimize the scattering for MP3 player and PC sound card form and strong structure limited and generate and emit, thus generate the acoustically lossless acoustic resonator. Generally, a main color of the active region piston mode and eTE1 [...] evanescent wave region color mode and mode coupling, the main DBR piston of the active region substrate resonator mode eTE1 first and second portions of the collar binding to binding to the substrate resonator mode minimizes effective, frame (for example, composite frame) inhibit the excitation for the propagation modes are. In representative embodiment, SMR device, substrate, disposed onto the top side of the substrate an acoustic reflector, mounted on the acoustic reflector top surface of acoustic stack, outside a an active main stack and sound is located on the substrate, and includes collar. Acoustic reflector the plurality of sound reflector layer is provided with a pairs. Acoustic stack have lower and upper electrode layers interposed between a piezoelectric layer, main the active regions lower electrode, upper electrode overlap between piezoelectric layers and, is defined by. A main color cutoff frequency of the active region cutoff frequency substantially equal to the color that P can vary.. In other exemplary embodiment, SMR a device has a substrate, disposed onto the top side of the substrate an acoustic reflector, DBR stack acoustic mounted on the upper side of, the active region in an active main stack and sound aligned composite frame includes. Acoustic stack plurality of sound reflector layer is provided with a pairs. Acoustic stack have lower and upper electrode layers interposed between a piezoelectric layer, main the active regions lower electrode, upper electrode overlap between piezoelectric layers and, is defined by. A main outer edge of frame as to ALIGN substantially with active region is. Herein an exemplary embodiment are disclosure but, a one skilled in the art, a number of inner walls extending from matches teachings present modified examples are claim with an which is maintained within the range of. recognized that. For example, on as seen in the, collar and/or frame position of, dimensions and materials can be modified as various.. Furthermore, various of the described performance characteristics which are such picture of the area to be treated with other features can be to or removed and /. The growth of hematopoietic stem cell, herein, drawing and claim inspection (inspection) after these and other variations are is will occur that is specific to one skilled in the art. Therefore, for the purposes of the present invention refers to claim with an that lie within the ranges and polygon except that. do not have to be limited. A solidly mounted resonator (SMR) device includes an acoustic reflector including stacked acoustic reflector layer pairs, and each stacked acoustic reflector layer pair comprises a lower acoustic impedance layer formed with a low acoustic impedance material stacked on a high acoustic impedance layer formed with a high acoustic impedance material. The SMR device further includes a lower electrode arranged on the acoustic reflector; a piezoelectric layer arranged on the lower electrode; and an upper electrode arranged on the piezoelectric layer. A collar is formed outside a main active area defined by overlap between the upper electrode, the piezoelectric layer, and the lower electrode, and at least one frame is arranged in the main active area. The collar includes an inner edge substantially aligned with the boundary of the main active area or overlapped with the main active area, and at least one frame includes an outer edge substantially aligned with the boundary of the main active area. COPYRIGHT KIPO 2015 SMR (solidly mounted resonator) device, disposed on the substrate the acoustic reflector said reflector-acoustic plurality of stacked acoustic reflector layer pair comprises, each acoustic reflector layer pair high acoustic impedance material is stacked on layer acoustic impedance low acoustic impedance formed of low acoustic impedance layer including and a, the upper portion of the acoustic reflector said acoustic impedance layer pair of said low acoustic impedance layer (botttom electrode) and the lower electrode, the piezoelectric actuator layer the, coupled to a top electrode being disposed on a piezo-electric layer said (top electrode) and, said upper electrode, said piezoelectric layers and, said overlap with the bottom electrode a main defined by color housing the active region (collar)-said collar said main active region or as to ALIGN substantially with said main, an inner edge overlap with each other, the active region and a power supply, such that a-and, is disposed within the active region main said main said active region is substantially aligned with an external edge that at least one frame and including SMR device. According to Claim 1, said low acoustic impedance material borosilicate glass (borosilicate glass; BSG) or tetra-ethyl- [...] -silicate (tetra-ethyl-ortho-silicate; TEOS) a including SMR device. According to Claim 1, said collar said active region when main of replacement includes substantially equal to the cutoff frequency color a SMR device. According to Claim 3, said collar said top electrode adjacent flat layer and said upper electrode is formed on the upper surface of a SMR device. According to Claim 3, said collar said lower electrode and a so-said piezoelectric layers that are formed between the SMR device. According to Claim 3, said collar a color electrically grounded SMR device. According to Claim 3, said collar a color for electrically floating SMR device. According to Claim 1, said at least one lower portion of said upper electrode (bottom portion) including SMR device a frame disposed about a perimeter. According to Claim 8, upper electrode said lower half of said frame disposed (add-on) an add-on frame including SMR device. According to Claim 8, said upper electrode disposed lower half of said composite frame frame (composite frame) for including SMR device. According to Claim 8, said at least one lower portion of said lower electrode located on one of the top (top portion) including SMR device a other frames. According to Claim 1, said at least one said lower half of lower electrode including SMR device a frame disposed about a perimeter. According to Claim 1, said collar borosilicate glass, silicon dioxide, carbon doped silicon oxide, silicon carbide, silicon nitride, aluminum oxide, aluminum nitride, zinc oxide, lead zirconium titanate (lead zirconium titanate), diamond, diamond-like carbon (diamond-like carbon), tungsten, molybdenum or iridium and an including SMR device. According to Claim 1, said at least one copper, molybdenum, aluminum, tungsten, iridium, borosilicate glass, carbon doped silicon oxide, silicon carbide, silicon nitride, aluminum oxide, aluminum nitride, zinc oxide, lead zirconium titanate, diamond or diamond-like carbon including SMR device. According to Claim 1, said piezoelectric layer contains at least one rare earth element doped with SMR device. According to Claim 1, said plurality of stacked acoustic reflector layer pairs at least one said low acoustic impedance material, said piezoelectric layers, at least the upper end of the lower electrode and said negative coefficients (negative temperature coefficients) at least a portion of and developing the photoresist PTC (positive temperature coefficient) temperature compensated material including SMR device. SMR (solidly mounted resonator) device, substrate and, disposed on upper surface of the substrate in said distributed Bragg reflector (distributed Bragg reflector; DBR)-said DBR a plurality of acoustic reflector layer pair includes-and, mounted on the upper side of said DBR acoustic stack-said acoustic stack have lower and upper electrode layers interposed between a piezoelectric layer, said lower electrode, said piezoelectric layers, and said upper electrode defined by overlap between a main active region for partitioning between an air atmosphere-and, said outside a an active main is located on the substrate, and includes collar, said collar said active region when main of replacement includes substantially equal to the cutoff frequency color a SMR device. According to Claim 17, said collar adjacent to said lower electrode number 1 for planarizing layer and upper surface of said lower electrode, or said adjacent top electrode number 2 for planarizing said layer and at least the upper end of the a disc shape to SMR device. SMR (solidly mounted resonator) device, substrate and, disposed on upper surface of the substrate in said distributed Bragg reflector (distributed Bragg reflector; DBR)-said DBR a plurality of acoustic reflector layer pair includes-and, mounted on the upper side of said DBR acoustic stack-said acoustic stack have lower and upper electrode layers interposed between a piezoelectric layer, said lower electrode, said piezoelectric layers, and said upper electrode defined by overlap between a main active region for partitioning between an air atmosphere-and, the active region in an active main said composite frame includes aligned, the outer edge of said frame said main active region is substantially aligned with a SMR device. According to Claim 19, said composite frames have in at least one of said lower and upper electrode layers a SMR device.
