Piezoelectric resonator structures and electrical filters having frame elements

Ladder type filter

미소 음향 소자 및 그 제조 방법

... 밀폐 방식의 닫힘을 제공하는 커버(CAP)를 포함하고, 예컨대 커버의 배치에 의해 음향 특성이 개선되는 미소 음향 소자(MAC)가 제공된다. 소자는 기능적 음향 영역(FAS), 내부 가장자리 영역(IRS) 및 외부 가장자리 영역(ORS)을 포함한다. 커버(CAP)는 기능적 음향 영역(CAP)을 덮고, 얇은 층 및 안착면(RS)을 포함한다. 내부 가장자리 영역(IRS)은 기능적 음향 영역(FAS)과 음향적으로 결합되며, 안착면(RS)은 적어도 내부 가장자리 영역(IRS)의 일부분 위에 직접적으로 안착한다.

BULK ACOUSTIC WAVE RESONATOR

An embodiment of the present invention relates to a bulk acoustic wave resonator, including: a piezoelectric layer including a piezoelectric material; a first electrode arranged on one plane of the piezoelectric layer; a second electrode arranged on another plane opposite to the one plane of the piezoelectric layer; and a frame which is arranged on one plane of the piezoelectric layer, and surrounds the first electrode. The bulk acoustic wave resonator can increase a quality factor (QF) or an electro-mechanical coupling coefficient (kt2) value, by reducing parasitic capacitance occurred between the frame and the second electrode. COPYRIGHT KIPO 2016 ...

BULK ACOUSTIC WAVE RESONATOR

PIEZOELECTRIC DEVICE, ANTENNA DUPLEXER, AND METHOD OF MANUFACTURING PIEZOELECTRIC RESONATORS USED THEREFOR TO FORM READILY PLURALITY OF PIEZOELETRIC RESONATORS HAVING DIFFERENT RESONANT FREQUENCIES

PURPOSE: A piezoeletric device and an antenna duplexer are provided to form readily a plurality of piezoeletric resonators having different resonant frequencies on the same substrate without decreasing an effective coupling coefficient. CONSTITUTION: A piezoeletric device includes plurality of piezoeletric resonators each including a substrate, a cavity formed on a substrate, a lower electrode layer formed on the substrate so as to cover the cavity, a piezoeletric layer formed on the lower electrode, and an upper electrode formed on the piezoeletric layer. Also, at least one of the plurality of the piezoeletric resonators is different in cavity depth from other piezoeletric resonators. At least one of the cavities is formed inside of the substrate or is formed as penetrating a thin film laminated on the substrate and being inside of the substrate. © KIPO 2006 ...

PIEZOELECTRIC THIN FILM RESONATOR, A FILTER, A COMMUNICATION MODULE, AND A COMMUNICATION DEVICE, CAPABLE OF REDUCING THE LEAKAGE IN TRANSVERSE DIRECTION OF A SEISMIC WAVE BY SECURING THE MECHANICAL STRENGTH ON THE OUTSIDE OF AN UPPER ELECTRODE

PURPOSE: A piezoelectric thin film resonator, a filter, a communication module, and a communication device are provided to suppress the ripple in a communication band by preventing the generation of a stand wave. CONSTITUTION: A bottom electrode(3) is formed on a substrate(1). A piezoelectric-film(4) is formed on the bottom electrode. The top electrode is formed on the piezoelectric-film to face with the bottom electrode. At least a part of the peripheral part of the top electrode has a reverse tapered shape. At least a part of the peripheral part of the top electrode corresponds to the peripheral part of piezoelectric-film. The peripheral part of the top electrode is arranged near the peripheral part of the piezoelectric-film. COPYRIGHT KIPO 2011 ...

LADDER TYPE FILTER, CAPABLE OF USING A PIEZOELECTRIC FILM RESONATOR WITH SUPERIOR CHARACTERISTICS IN A HIGH FREQUENCY

PURPOSE: A ladder type filter is provided to set up difference of a resonance frequency between a series resonator and a parallel resonator with high precision. CONSTITUTION: A ladder type filter includes a series resonator having a lamination film(18) formed for a bottom electrode(12) and a top electrode(16) to be opposed to each other. A piezoelectric film(14) is positioned between the bottom electrode and the top electrode. A first film(22) is formed on the lamination film. A parallel resonator has the lamination film and a second film(20) formed on the lamination film. The parallel resonator has the first film formed on the second film. The second film is an electric conductor film. A third film(24) is formed on the first film of the parallel resonator and the series resonator. The third film is an insulator film. © KIPO 2008 ...

BULK ACOUSTIC WAVE RESONATOR

According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. In one example, the BAW resonator further includes a controlled thickness region including a material segment that is one of a low density metal segment and a dielectric segment, where the material segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. In another example, the piezoelectric layer has a disrupted texture region, where the disrupted texture region is situated in the controlled thickness region of the BAW resonator. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator.

Piezoelectric resonator and electronic device incorporating the same

A highly compact piezoelectric resonator having excellent resonant characteristics and very small resonant resistance includes an upper electrode disposed on one of two main surfaces of a piezoelectric film and a lower electrode disposed on the other main surface of the piezoelectric film. The upper electrode includes a first external-signal extracting electrode, a first leading electrode, and three first vibrating electrodes. The lower electrode includes a second external-signal extracting electrode, a second leading electrode, and three second vibrating electrodes. The three first vibrating electrodes are arranged substantially perpendicularly to the three second vibrating electrodes via the piezoelectric film. Vibrating sections are located at positions where the first vibrating electrodes are arranged substantially perpendicularly to the second vibrating electrodes.

PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND DUPLEXER

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film inserted in the piezoelectric film, located in at least a part of an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, and not located in a center region of the resonance region, wherein a difference between a total film thickness of the piezoelectric film and the insertion film in a first region, in which the insertion film is inserted, within the resonance region and a film thickness of the piezoelectric film in a second region, in which the insertion film is not inserted, is less than a film thickness of the insertion film.

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

FILM BULK ACOUSTIC RESONATOR

The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

ELLIPTICAL STRUCTURE FOR BULK ACOUSTIC WAVE RESONATOR

An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.

Acoustic resonator structure having an electrode with a cantilevered portion

An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge disposed adjacent to one of the sides of the second electrode.

Acoustic wave resonator RF filter circuit and system

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

THIN FILM PIEZOELECTRIC RESONATOR AND METHOD OF MANUFACTURING THE SAME

BULK ACOUSTIC RESONATOR AND RESONATOR SET PROVIDED WITH ACOUSTIC INTERFERENCE ARRAYS, AND FILTER AND ELECTRONIC DEVICE

Disclosed is a bulk acoustic resonator. The bulk acoustic resonator includes: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein an overlapping area, in the thickness direction of the resonator, of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror forms an effective area of the resonator; the resonator is provided with an acoustic mismatching structure at an edge of the effective area; and acoustic interference arrays are arranged on the top surface of the resonator, and the acoustic interference arrays include a central array covering the effective area, and a peripheral array covering at least part of the acoustic mismatching structure. Further disclosed are a bulk acoustic resonator set, a filter provided with the resonator or the resonator set, and an electronic device provided with the resonator, the resonator set or the filter.

BAW-Resonator

Eine BAW-Resonatorvorrichtung wird vorgeschlagen, die voll leitfähige akustische Spiegel aufweist. Jeder der BAW-Resonatoren wird von einem jeweiligen Stapel elektrisch kontaktiert. Zwei oder mehr BAW-Resonatoren können durch Verbindungsleitungen elektrisch verbunden sein, die in einer von den Elektroden entfernten Ebene angeordnet sind. Die Verbindungsleitungen verbinden die Stapel der jeweiligen Resonatoren. Die vollständig leitenden akustischen Spiegel können auch auf den Resonatoren angeordnet sein, so dass die BAW-Vorrichtung eine Struktur hat, die symmetrisch bezüglich der horizontalen Spiegelebene ist.

BAW-Resonator mit einem hohen Q-Wert und Störmodenunterdrückung

Es ist ein BAW-Resonator vorgesehen, wobei die obere Elektrode eine äußere Klappe aufweist. Die Klappe erstreckt sich vom aktiven Resonatorgebiet fort und hat einen vorstehenden Abschnitt, der in einem Niveau oberhalb der piezoelektrischen Schicht verläuft, das höher ist als das Niveau der oberen Elektrode in jeglichen der sich innen befindenden Bereiche, die von der äußeren Klappe eingeschlossen sind. Das höhere Niveau ist durch ein eingefügtes stufenbildendes Material gebildet, das zwischen der piezoelektrischen Schicht und der oberen Elektrode in der äußeren Klappe angeordnet ist. Das stufenbildende Material umfasst eine strukturierte Schicht mit einer akustischen Impedanz, die in Bezug auf die Impedanz der oberen Elektrode und der piezoelektrischen Schicht gering ist.

Acoustic resonator

Acoustic resonators

TUNABLE THIN SECTION VOLUME WAVE RESONATOR, MANUFACTURING METHOD FOR IT, FILTER, MULTILEVEL COMPOSITION ELECTRONIC ELEMENT AND COMMUNICATION DEVICE

Bulk acoustic resonator and manufacturing method thereof

Bulk acoustic wave resonator

BULK ACOUSTIC WAVE RESONATOR AND FILTER HAVING SAME

According to an embodiment of the present invention, a bulk acoustic wave resonator comprises: a substrate; and a resonance unit including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. At least one of the first electrode and the second electrode includes an alloy of molybdenum (Mo) and tantalum (Ta). The bulk acoustic wave resonator can improve crystal alignment of the piezoelectric layer formed on an electrode. COPYRIGHT KIPO 2018 (A1,A2) Inactive area (BB) Active area ...

ACOUSTIC RESONATOR COMPRISING ACOUSTIC REFLECTOR, FRAME AND COLLAR

A solidly mounted resonator (SMR) device includes an acoustic reflector including stacked acoustic reflector layer pairs, and each stacked acoustic reflector layer pair comprises a lower acoustic impedance layer formed with a low acoustic impedance material stacked on a high acoustic impedance layer formed with a high acoustic impedance material. The SMR device further includes a lower electrode arranged on the acoustic reflector; a piezoelectric layer arranged on the lower electrode; and an upper electrode arranged on the piezoelectric layer. A collar is formed outside a main active area defined by overlap between the upper electrode, the piezoelectric layer, and the lower electrode, and at least one frame is arranged in the main active area. The collar includes an inner edge substantially aligned with the boundary of the main active area or overlapped with the main active area, and at least one frame includes an outer edge substantially aligned with the boundary of the main active area ...

ACOUSTIC WAVE RESONATOR DEVICE

Disclosed is an acoustic wave resonator device which can prevent bonding a resonance unit and a substrate. The acoustic wave resonator device comprises: the substrate; a lower electrode; a piezoelectric layer formed to cover at least a part of the lower electrode; an upper electrode formed on the piezoelectric layer; and a shape control layer formed to cover the edge of an air gap arranged between the substrate and the lower electrode. The shape control layer is formed by applying a tensile stress to the shape control layer when the shape control layer is formed. COPYRIGHT KIPO 2018 ...

PIEZOELECTRIC THIN FILM FILTER

A piezoelectric thin film filter where insertion loss and deterioration of sharpness of a shoulder are suppressed and ripples in a pass band can be suppressed is provided. In first and second vibration parts (20s) and (20p), a piezoelectric thin film (16) is arranged between a pair of electrodes (15s) and (17s); (15p) and (17p) along one main face (12a) of a substrate (12), and they are acoustically separated from the substrate (12). A first resonator (S1) is brought into contact with one electrode (17s) forming not less than a half of whole length of an outer periphery of the first vibration part (20s) if it is viewed from a thickness direction and an additional film (22) is arranged outside. In a second resonator (P1), an outer shape of the second vibration part (20p) is polygonal and respective sides of a polygon are nonparallel to the other sides if viewed from the thickness direction.

Acoustic resonator comprising acoustic reflector, frame and collar

A solidly mounted resonator (SMR) device includes an acoustic reflector having stacked acoustic reflector layer pairs, each of which includes a low acoustic impedance layer formed of low acoustic impedance material stacked on a high acoustic impedance layer formed of high acoustic impedance material. The SMR device further includes a bottom electrode disposed on the acoustic reflector, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. A collar is formed outside a main active region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode, and at least one frame is disposed within the main active region. The collar has an inner edge substantially aligned with a boundary of or overlapping the main active region, and the at least one frame has an outer edge substantially aligned with the boundary of the main active region.

BAW RESONATORS WITH ANTISYMMETRIC THICK ELECTRODES

A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Acoustic resonator structure having an electrode with a cantilevered portion

An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. An electrical filter comprises an acoustic resonator.

5.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Acoustic resonator comprising integrated structures for improved performance

An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and an air cavity disposed in the substrate below at least a portion of a main membrane region defined by an overlap between the first electrode. The acoustic resonator structure may further comprise various integrated structures at or around the main membrane region to improve its electrical performance.

BULK ACOUSTIC WAVE RESONATOR HAVING OPENINGS IN AN ACTIVE AREA AND A PILLAR BENEATH THE OPENING

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a lower electrode; a piezoelectric layer disposed over the lower electrode; and an upper electrode over the piezoelectric layer. An opening having a first area exists in and extends completely through the upper electrode. The BAW resonator also includes a substrate disposed below the lower electrode; a cavity; and a pillar disposed in the cavity and extending to contact a portion of the lower electrode disposed beneath the opening. The pillar has a second area that is less than the first area. There are no electrical connections that extend across the opening from one side to another. 1. A bulk acoustic wave (BAW) resonator , comprising:a lower electrode;a piezoelectric layer disposed over the lower electrode;an upper electrode disposed over the piezoelectric layer, wherein an opening having a first area exists in and extends completely through the upper electrode;a substrate disposed below the lower electrode;a cavity; anda pillar disposed in the cavity and extending to contact a portion of the lower electrode located beneath the opening, the pillar having a second area that is less than the first area, wherein there are no electrical connections that extend across the opening from one side to another.2. The BAW resonator of claim 1 , further comprising a frame element disposed over the upper electrode claim 1 , wherein the frame element is disposed adjacent to a perimeter of the opening.3. The BAW resonator of claim 2 , wherein the frame element is at least one of a raised frame element claim 2 , a recessed frame element claim 2 , and a cantilevered portion.4. The BAW resonator of claim 1 , wherein a gap (G) exists between an inner edge of a cantilevered portion and an outer edge of the pillar claim 1 , or between an inner edge of the upper electrode and the outer edge of the pillar.5. The BAW resonator of claim 1 , wherein the pillar is a first pillar claim 1 , and the BAW resonator ...

Piezoelectric Resonaor with Patterned Resonant Confiners

A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

Film bulk acoustic wave resonator and manufacturing method thereof

A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).

Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device

A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.

Akustischer Resonator mit erweitertem Hohlraum

Ein BAW-Resonator beinhaltet ein nichtlineares Substrat, das einen Hohlraum definiert, und einen akustischen Stapel über dem Hohlraum, wobei der akustische Stapel eine untere Elektrode, eine piezoelektrische Schicht und eine obere Elektrode beinhaltet, wobei ein aktiver Bereich des akustischen Stapels überlappende Teilbereiche des Hohlraums, der unteren Elektrode, der piezoelektrischen Schicht und der oberen Elektrode beinhaltet. Der BAW-Resonator beinhaltet ferner einen Verbindungsstreifen, der sich aus einem Teilbereich der oberen Elektrode erstreckt zum Bereitstellen von elektrischer Anregung des akustischen Stapels, wobei ein in dem BAW-Resonator erzeugtes E-Feld an der oberen Elektrode beginnt und an der unteren Elektrode endet als Antwort auf die elektrische Anregung. Der Hohlraum beinhaltet einen inneren Teilbereich in dem aktiven Bereich und einen erweiterten Teilbereich, der sich von einem äußeren Umfang des aktiven Bereichs unterhalb des Verbindungsstreifens erstreckt. Eine Länge ...

Bulk Acoustic Wave Resonator aufweisend eine innerhalb einer piezoelektrischen Schicht gebildeten Brücke

Eine Bulk Acoustic Wave, BAW, Resonator Struktur (100), aufweisendeine erste Elektrode (107), welche über einem Substrat (105) angeordnet ist,eine piezoelektrische Schicht (108), welche über der ersten Elektrode (107) angeordnet ist,eine zweite Elektrode (101), welche über der piezoelektrischen Schicht (108) angeordnet ist, undeine Brücke (104, 104'), welche innerhalb der piezoelektrischen Schicht (108) verborgen ist, wobei die Brücke (104, 104') zumindest einen Teil eines Umfangs entlang einer aktiven Region (114) der BAW Resonator Struktur (100) definiert.

Piezoelectric thin film resonator, filter, and duplexer

Dispositivo ressoador acústico e método de produção do mesmo

MULTI-LAYER RAISED FRAME IN BULK ACOUSTIC WAVE DEVICE

A thin film bulk acoustic resonator with a mass loaded perimeter

BAW resonator device

A BAW resonator device is proposed comprising fully conductive acoustic mirrors. Each of the BAW resonators is electrically contacted by a respective stack. Two or more BAW resonators may be electrically connected by connection lines arranged in a plane distant from the electrodes. The connection lines connect the stacks of the respective resonators. The fully conductive acoustic mirrors may be arranged on top of the resonators as well such that the BAW device has a structure symmetric with respect to horizontal mirror plane.

Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials

A semiconductor bulk acoustic resonator (SBAR) with improved passband insertion loss and phase performance characteristics is suitable for use in a wide variety of narrowband filtering applications. The SBAR is configured to suppress lateral propagating acoustical wave modes. The lateral acoustical wave modes are controlled by varying the lateral dimension of the resonator electrodes and or utilizing a viscous acoustic damping material, such as a viscoelastic material, such as polyimide, applied along at least a portion of the perimeter of the electrodes to attenuate reflections of the lateral acoustic modes at the electrode edges back into the electrode region.

Piezoelectric resonators for overtone oscillations

For the purpose of utilizing the characteristic in a vibration energy entrapping mode of a higher order symmetric or asymmetric mode vibration generated when a piezoelectric resonator is excited, there are provided a portion having a cutoff frequency f2 about an energy entrapping portion having a cutoff frequency f1 for strongly exciting a higher order symmetric or asymmetric mode vibration and at least one energy absorbing portion having a cutoff frequency f3 (at least f1 and f3 Подробнее

Piezoelectric thin film resonator, filter, and duplexer

A piezoelectric thin film resonator includes: an acoustic reflection layer including an air gap or an acoustic mirror; lower and upper electrodes facing each other in a stacking direction, at least a part of each of the lower and upper electrodes being located on or above the acoustic reflection layer; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, at least a part of an end face of the piezoelectric film in a film thickness direction being located between outer outlines of the resonance region and the acoustic reflection layer in at least a part of a region surrounding a resonance region; and an insertion film inserted between the lower and upper piezoelectric films, located in at least a part of an outer peripheral region within the resonance region, and not located in a center region of the resonance region.

BAW RESONATOR HAVING LATERAL ENERGY CONFINEMENT AND METHODS OF FABRICATION THEREOF

Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (T PA ). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (T PA ) of the passivation layer.

Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer

An acoustic resonator structure includes an acoustic reflector over a cavity formed in a substrate, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. The acoustic resonator further includes a bottom electrode on the layer of low acoustic impedance material, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a collar formed outside a main membrane region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode. The collar has an inner edge substantially aligned with a boundary of or overlapping the main membrane region. The layer of the low acoustic impedance material includes a temperature compensating material having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the bottom electrode and the top electrode.

BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREFOR

The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.

Bulk acoustic resonator and filter device

A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Akustikresonator-Vorrichtung mit mindestens einem Luftring und einem Rahmen

Eine Akustikresonator-Vorrichtung umfasst eine untere Elektrode, die auf einem Substrat über einem Lufthohlraum angeordnet ist, eine piezoelektrische Schicht, die auf der unteren Elektrode angeordnet ist, und eine obere Elektrode, die auf der piezoelektrischen Schicht angeordnet ist, wobei eine Überlappung zwischen der oberen Elektrode, der piezoelektrischen Schicht und der unteren Elektrode über dem Lufthohlraum einen Membranhauptbereich definiert. Die Akustikresonator-Vorrichtung umfasst ferner mindestens einen Metallrahmen, der auf einer unteren Oberfläche der unteren Elektrode angeordnet ist und der eine Dicke aufweist, die von etwa 10% bis etwa 75% einer Dicke der unteren Elektrode in einem zentralen Bereich der unteren Elektrode reicht. Die Dicke des Metallrahmens verbessert die Wärmeableitung aus der Akustikresonator-Vorrichtung, während sie auch die strukturelle Stabilität der Akustikresonator-Vorrichtung verbessert, ohne ihre Leistungsfähigkeit nachteilig zu beeinflussen.

Piezoelektrischer Resonator und elektronische Vorrichtung, die denselben enthält

Piezoelektrischer Resonator (10), der in einem Dickenschwingungsmode schwingt und folgende Merkmale aufweist: eine piezoelektrische Schicht (12); eine erste Elektrode (14a), die auf einer Hauptoberfläche der piezoelektrischen Schicht angeordnet ist, wobei die erste Elektrode eine führende Elektrode (18a) und mindestens eine Schwingelektrode (20a), die mit der führenden Elektrode verbunden ist, umfaßt; eine zweite Elektrode (14b), die auf der anderen Hauptoberfläche der Schicht angeordnet ist, wobei die zweite Elektrode eine führende Elektrode (18b) und mindestens eine Schwingelektrode (20b), die mit der führenden Elektrode verbunden ist, umfaßt; und eine Mehrzahl von Schwingabschnitten (22), an denen die mindestens eine Schwingelektrode (20a) der ersten Elektrode (14a) mit der mindestens einen Schwingelektrode (20b) der zweiten Elektrode (14b) über die piezoelektrische Schicht (12) überlappt, wobei die Mehrzahl von Schwingabschnitten parallel geschaltet ist, und wobei der Abstand zwischen ...

Acoustic resonator

Electronic component and filter including the same

With an integral transverse with the composite electrode of an acoustic resonator

ACOUSTIC DEVICE INCLUDING/UNDERSTANDING A STRUCTURE OF CRYSTAL PHONONIQUE HAS INCLUSIONS OF TYPE THE CONICAL AND METHOD FOR REALIZATION OF THE AFORESAID DEVICE

L'invention concerne un dispositif acoustique comprenant une structure de cristal phononique et permettant le blocage de la propagation des ondes acoustiques dans une bande de fréquences dite bande d'arrêt caractérisé en ce que la structure de cristal phononique comporte au moins une première série d'inclusions réalisées dans un premier milieu réparties dans une matrice constituée par un second milieu, lesdites inclusions comportant des parois en contact avec ladite matrice faisant au moins un premier angle (0) dit angle de paroi, non nul avec la normale au plan de ladite structure, l'angle de paroi étant une fonction de la largeur de la bande d'arrêt. L'invention a aussi pour objet un procédé permettant de paramétrer lesdites inclusions de manière à régler la position en fréquence de la bande d'arrêt et la largeur de ladite bande d'arrêt.

PIEZOELECTRIC RESONATOR, AND ELECTRONIC DEVICE COMPRISING IT

L'invention concerne un résonateur piézoélectrique. Elle se rapporte à un résonateur vibrant en mode de vibration suivant l'épaisseur et qui comprend une couche piézoélectrique (12), une première électrode (14a) comprenant une électrode de liaison (18a) et au moins une électrode vibrante (20a) connectée à l'électrode de liaison (18a), une seconde électrode (14b) comprenant une électrode de liaison (18b) et au moins une électrode vibrante (20b) connectée à l'électrode de liaison (18b), et plusieurs sections vibrantes (22) dans lesquelles une électrode vibrante (20a) de la première électrode (14a) recouvre une électrode vibrante (20b) de la seconde électrode (14b) avec interposition de la couche piézoélectrique (12), les sections vibrantes (22) étant connectées en parallèle. Application aux filtres à résonateurs.

PIEZOELECTRIC RESONATOR AND PIEZOELECTRIC FILTER

It is possible to provide a piezoelectric resonator of a small size and a small thickness and hardly generating a spurious in a mode for propagation through a piezoelectric thin film at a higher range side than a resonance frequency. The piezoelectric resonator includes a layered thin film formed by a first thin film portion supported by a substrate (2) and a second thin film portion floating above the first main surface of the substrate and acoustically separated. The second thin film portion of the layered thin film has a piezoelectric thin film (5), a first electrode (12) arranged on the upper surface of the piezoelectric thin film, and a second electrode (13) greater and thicker than the first electrode and formed on the lower surface of the piezoelectric thin film. A mass adding film (11) is further provided around the first electrode (12) at least a part of outside of the piezoelectric oscillation portion where the first electrode (12) and the second electrode (13) are overlapped ...

BULK ACOUSTIC WAVE RESONATOR

The invention relates to a bulk acoustic wave filter comprising at least one first resonator and at least one second resonator. A longitudinal acoustic mode for which normal dispersion is adjusted in the first resonator and abnormal dispersion is adjusted for the second resonator by selecting the material and the relative layer thicknesses, is able to propagate in the resonators, thus making it possible to improve especially the power compatibility of the filter at the higher frequency edge of the passband thereof.

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a first electrode, a second electrode, a piezoelectric layer disposed between the first electrode and the second electrode, a substrate positioned adjacent to the second electrode, and an active area having at least one biarc boundary.

Ladder type filter

A ladder filter includes a series resonator having a first film laminate in which an upper electrode and a lower electrode face each other across a piezoelectric film, and a first film provided on the first film laminate, and a parallel resonator having a second film laminate having a structure similar to that of the first film laminate, a second film provided on the second film laminate, and another first film identical to the first film.

ELLIPTICAL STRUCTURE FOR BULK ACOUSTIC WAVE RESONATOR

An elliptical-shaped resonator device. The device includes a bottom metal plate, a piezoelectric layer overlying the bottom metal plate, and a top metal plate overlying the piezoelectric layer. The top metal plate, the piezoelectric layer, and the bottom metal plate are characterized by an elliptical shape having a horizontal diameter (dx) and a vertical diameter (dy), which can be represented as ellipse ratio R=dx/dy. Using the elliptical structure, the resulting bulk acoustic wave resonator (BAWR) can exhibit equivalent or improved insertion loss, higher coupling coefficient, and higher quality factor compared to conventional polygon-shaped resonators.

Acoustic resonator having integrated lateral feature and temperature compensation feature

A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic mirror, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. At least one of the bottom electrode and the top electrode includes an integrated lateral feature configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch.

Ladder type intermediate frequency filter

A piezoelectric filter is one not changing in the holding position of resonator in spite of impulse, small in the number of parts, easy to assemble from one direction, small, thin, and stable in characteristic. For example, as shown in FIG. 7, on electrode patterns on a package 10 forming wiring electrode patterns 11, holding protrusions 13 for holding resonators, and partition boards 14 for positioning resonators, a rectangular plate type piezoelectric resonators 12 are adhered with conductive adhesive. The rectangular plate type piezoelectric resonators 12 and the package 10 are adhered and reinforced from above with a vibration absorbing member 15, and wiring is formed from above the resonators by a wire bonding 16, thereby wiring resonators in a ladder form. Or, as shown in FIG. 11, after forming electrode patterns 102 on a piezoelectric substrate 101, a rectangular plate resonator 104 is cut out from a piezoelectric substrate 101 by laser in a shape consecutive to the piezoelectric ...

Piezoelectric thin film resonator, filter and duplexer

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film provided on the substrate; a lower electrode and an upper electrode that sandwich at least a part of the piezoelectric film and face with each other; and an inserted film that is inserted in the piezoelectric film, is provided on an outer circumference region in a resonance region in which the lower electrode and the upper electrode sandwich the piezoelectric film and face with each other, is not provided in a center region of the resonance region, and has a cutout in the resonance region.

Using acoustic reflector to reduce spurious modes

A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.

PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND MULTIPLEXER

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a wiring layer located on the upper electrode, the wiring layer having a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm, at least a part of the wiring layer overlapping in plan view with a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, a distance between an outline of the resonance region and an edge of a lower surface located within the resonance region and farthest from the outline being greater than 0 μm and less than 2 μm. 1. A piezoelectric thin film resonator comprising:a substrate;a piezoelectric film located on the substrate;a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; anda wiring layer located on the upper electrode, the wiring layer having a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm, at least a part of the wiring layer overlapping in plan view with a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, a distance between an outline of the resonance region and an edge of a lower surface of the wiring layer located within the resonance region and farthest from the outline being greater than 0 μm and less than 2 μm.2. The piezoelectric thin film resonator according to claim 1 , whereinthe wiring layer includes an adhesion layer located on the upper electrode, and a low-resistivity layer located on the adhesion layer and made of a material with a lower resistivity than the adhesion layer, andthe low-resistivity layer has a thickness equal to or greater than 0.8 μm and equal to or less than 3.0 μm.3. The piezoelectric thin film resonator according to claim 2 , whereinthe low-resistivity layer ...

MICRO-ACOUSTIC DEVICE WITH REFLECTIVE PHONONIC CRYSTAL AND METHOD OF MANUFACTURE

A micro-acoustic device comprises a confinement structure (CS) adapted to block propagation of acoustic waves of an acoustic wave resonator (TEL, PL, BEL; ES) at an operation frequency of the device to confine the acoustic waves to the acoustic path or the acoustic volume. It is proposed to use a phononic crystal material for producing the confinement structure.

BORDER RING MODE SUPPRESSION IN SOLIDLY-MOUNTED BULK ACOUSTIC WAVE RESONATOR

Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed.

FRONT END MODULE FOR 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.2 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 5.2 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 5.2 GHz BAW resonator comprises'}a diversity switch electrically coupled the 5.2 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a power amplifier with power gain at 5.2 GHz.3. The device of wherein the 5.2 GHz BAW resonator ...

BULK ACOUSTIC WAVE RESONATOR DEVICE COMPRISING AN ACOUSTIC REFLECTOR AND A BRIDGE

A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack.

Mikroakustische Vorrichtung und Herstellungsverfahren

Eine mikroakustische Vorrichtung umfasst eine Begrenzungsstruktur, die dazu eingerichtet ist, eine Propagation von akustischen Wellen mit einer Betriebsfrequenz der Vorrichtung zu verhindern, um die akustischen Wellen auf den akustischen Pfad oder das akustische Volumen zu begrenzen. Es wird vorgeschlagen, ein Phononischer-Kristall-Material zum Produzieren der Begrenzungsstruktur zu verwenden.

Thin layer bulk-acoustic wave filter e.g. for 3G mobile technology, has coupled resonator filter and conductor- or grid-filter section integrated on common substrates

A thin layer bulk-acoustic wave (BAW) filter has at least one coupled resonator filter (CRF) section and at least one conductor- or grid-filter section in which the CRF-section has at least two coupled resonators (2,4). The CRF section and conductor- or grid-filter section are integrated on a common substrate (7). An independent claim a method for manufacturing a thin-layer BAW filter.

Thin film acoustic resonator suppresses parasitic modes to improve Q

A thin-film acoustic resonator, e.g. an FBAR, suppresses parasitic modes by including a recess feature 60 in the piezoelectric layer 48 adjacent the edge of the polygonal top electrode 50. The recess may be on the top surface of the piezoelectric layer or its bottom surface (see fig 7). The recess may contain a fill material (61, fig 8). In an alternative embodiment the recess may be included in the passivation layer on top of the polygonal top electrode (see 90, 82, 80, fig 9). Again the recess may contain a fill material (91, fig 10).

PIEZOELECTRIC THIN-FILM RESONATOR AND FILTER

BULK ACOUSTIC WAVE RESONATOR

FILTER, CAPABLE OF SUPPRESSING RIPPLE IN PASS BAND

PURPOSE: A filter is provided to increase endurance for ESD(ElectroStatic Discharge) breakdown while having low loss. CONSTITUTION: A filter comprises a plurality of piezoelectric thin film resonators. The piezoelectric thin film resonator has a substrate, a bottom electrode installed on the substrate, a piezoelectric film formed on the bottom electrode and a top electrode installed on the piezoelectric film. A part of the plurality of piezoelectric thin film resonators is a first resonator(41) where at least a part of the outer circumference of the piezoelectric film is located outer than the circumference of the region where the top electrode and the bottom electrode are faced with each other. The other part of the plurality of piezoelectric thin film resonators is a second resonator(42) where at least a part of the outer circumference of the piezoelectric film is located at the same or inner side position than the circumference of the region where the top electrode and the bottom electrode ...

PIEZOELECTRIC THIN FILM RESONATOR AND A FILTER TO SUPPRESS SPURIOUS

PURPOSE: A piezoelectric thin film resonator is provided to suppress the loss of thermal energy by controlling vibration of the end of a resonation region. CONSTITUTION: A lower electrode(43) is formed on a cavity(46) of a substrate(41) or formed on the substrate in a manner that a cavity is formed between the substrate and the lower electrode. A piezoelectric layer(44) is formed on the lower electrode. An upper electrode(45) is formed on the piezoelectric layer in a manner that a resonation region(50) confronting the lower electrode is formed between the piezoelectric layer and the upper electrode. A support region(52) is formed in the periphery of the resonation region wherein a wave whose width is 0.35-0.65 times as great as the wavelength of the wave propagating widthwise passes through the support region. A peripheral region blocks the wave, formed in the periphery of the support region. The width of the support region can be 0.5 times as great as the wavelength of a wave propagating ...

Piezoelectric filter, its manufacturing method, and intermediate frequency filter

A piezoelectric filter is one not changing in the holding position a resonator in spite of impulse, small in the number of parts, easy to assemble from one direction, small, thin, and stable in characteristic. For example, as shown in FIG. 7, on electrode patterns on a package 10 forming wiring electrode patterns 11, holding protrusions 13 for holding resonators, and partition boards 14 for positioning resonators, a rectangular plate type piezoelectric resonators 12 are adhered with conductive adhesive. The rectangular plate type piezoelectric resonators 12 and the package 10 are adhered and reinforced from above with a vibration absorbing member 15, and wiring is formed from above the resonators by wire bonding 16, thereby wiring resonators in a ladder form. Or, as shown in FIG. 11, after forming electrode patterns 102 on a piezoelectric substrate 101, a rectangular plate resonator 104 is cut out from a piezoelectric substrate 101 by laser in a shape consecutive to the piezoelectric substrate ...

Bulk acoustic wave resonator

A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a first electrode, a second electrode, a piezoelectric layer disposed between the first electrode and the second electrode, a substrate positioned adjacent to the second electrode, and an active area having at least one biarc boundary.

Bulk acoustic wave resonator and method of manufacturing the same

A bulk acoustic wave resonator includes a substrate including a cavity groove, a membrane layer disposed above the substrate and including a convex portion. And a lower electrode including a portion thereof disposed on the convex portion. The bulk acoustic wave resonator also includes a piezoelectric layer configured so that a portion of the piezoelectric layer is disposed above the convex portion, and an upper electrode disposed on the piezoelectric layer. A first space formed by the cavity groove and a second space formed by the convex portion form a cavity, the cavity groove is disposed below an active region, and the convex portion comprises an inclined surface disposed outside of the cavity groove.

BULK ACOUSTIC WAVE RESONATORS HAVING A PHONONIC CRYSTAL ACOUSTIC MIRROR

Bulk acoustic wave resonators having a phononic crystal acoustic mirror are disclosed. An example integrated circuit package includes a bulk acoustic wave (BAW) resonator including a phononic crystal acoustic mirror (PCAM), the PCAM including a first arrangement of a first plurality of members in a first region, and a second arrangement of a second plurality of members in a second region, the first arrangement different from the second arrangement.

ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME

An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

Thin film bulk acoustic resonator with a mass loaded perimeter

A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

RECESS FRAME STRUCTURE FOR A BULK ACOUSTIC WAVE RESONATOR INCLUDING ELECTRODE RECESSES

A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation and in recessed frame regions disposed laterally on opposite sides of the central region, and an electrode disposed on an upper surface of the piezoelectric film, the electrode having a lesser thickness in the recessed frame regions than the thickness of the electrode in the central region to increase a quality factor of the FBAR.

Method for fabricating bulk acoustic wave resonator with mass adjustment structure

A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.

FRONT END MODULES FOR 5.6 GHz & 6.6 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUITS

A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

FILM BULK ACOUSTIC RESONATOR

PROBLEM TO BE SOLVED: To provide a film bulk acoustic resonator capable of attaining improvement in resonance characteristics by suppressing to a minimum, the generation of standing waves caused by sonic waves of a traversal mode. SOLUTION: In a film bulk acoustic resonator comprising a resonating part A constituted by holding a piezoelectric film 3 between a 1st electrode 2 and a 2nd electrode 4, the resonating part A is constituted in a planar shape notching a part of an ellipse with a straight line L. The straight line L crosses at least one of, preferably both a short axis and a long axis of the ellipse and passes the center of the ellipse. COPYRIGHT: (C)2007,JPO&INPIT ...

Ein akustischer Resonator mit einem Schutzring

Eine Bulk Akustik Wave (BAW) Resonatorstruktur weist eine erste Elektrode, welche über einem Substrat angeordnet ist, eine piezoelektrische Schicht, welche über der ersten Elektrode angeordnet ist, eine zweite Elektrode, welche über der ersten piezoelektrischen Schicht angeordnet ist, und eine Schutzringsstruktur auf, welche um einen Umfang einer aktiven Region herum gebildet ist, welche zu einer Überlappung der ersten Elektrode, der ersten piezoelektrischen Schicht und der zweiten Elektrode korrespondiert.

BAW-Resonator mit einem hohen Q-Wert und Störmodenunterdrückung

Es ist ein BAW-Resonator vorgesehen, wobei die obere Elektrode eine äußere Klappe aufweist. Die Klappe erstreckt sich vom aktiven Resonatorgebiet fort und hat einen vorstehenden Abschnitt, der in einem Niveau oberhalb der piezoelektrischen Schicht verläuft, das höher ist als das Niveau der oberen Elektrode in jeglichen der sich innen befindenden Bereiche, die von der äußeren Klappe eingeschlossen sind. Das höhere Niveau ist durch ein eingefügtes stufenbildendes Material gebildet, das zwischen der piezoelektrischen Schicht und der oberen Elektrode in der äußeren Klappe angeordnet ist. Das stufenbildende Material umfasst eine strukturierte Schicht mit einer akustischen Impedanz, die in Bezug auf die Impedanz der oberen Elektrode und der piezoelektrischen Schicht gering ist.

Akustischer Resonator und Filter mit Zickzack-Kante aufweisender Elektrode und Verfahren zur Herstellung von selbigem

Verfahren, umfassend:ein Festlegen (201) einer Pulsfunktion, um eine Konturlinie eines Volumenwellen (BAW) -Resonators zu erzeugen;ein Bereitstellen (203) von Segmenten der Konturlinie basierend auf einer Amplitude, Periode und Konturlänge der Pulsfunktion; undein Verbinden (209) von Endpunkten der Segmente, um eine Konturlinie in Form einer geschlossenen Schleife zu bilden, die eine effektive Fläche des BAW-Resonators umgibt, wobei das Verfahren ferner umfasstein Bilden der geschlossenen Konturlinie mit einer zickzackförmigen Kontur entlang eines Umfangs einer Bodenelektrode, einer oberen Elektrode oder von beiden Elektroden; oderein Bilden der geschlossenen Konturlinie, die eine Kontur in Form einer nicht-parallelen Kurve mit sinusförmigen Funktionen entlang eines Umfangs der Bodenelektrode, der oberen Elektrode oder von beiden Elektroden aufweist.

Resonator mit akustischen Volumenwellen mit verbesserter lateralen Modeunterdrückung

Piezoelektrische Resonatorstrukturen und elektrische Filter

Elektrischer Resonator, der folgende Merkmale aufweist: eine erste Elektrode (102; 203) mit zumindest zwei gekrümmten Kanten und zumindest einer linearen Kante; eine zweite Elektrode (103; 204; 300) mit zumindest zwei gekrümmten Kanten und zumindest einer linearen Kante; und eine Schicht aus piezoelektrischem Material (101; 201), die zwischen der ersten und der zweiten Elektrode angeordnet ist, wobei sich Dickenerstreckungs-(TE-)Moden entlang einer Dicke der Schicht ausbreiten.

Improved Q for FBAR-type acoustic resonators

In an FBAR resonator structure (FBAR) made of electrodes sandwiching a piezoelectric material, the intersection of the two conducting electrodes defines the active area of the acoustic resonator. To improve the Q of the resonator the active area is divided into concentric areas by a frame or annulus near the perimeter of one of the electrodes. The materials chosen are such that the acoustic impedance of the material within the annulus or frame has a first value, the acoustic impedance of the material outside the annulus or frame has a second value and the acoustic impedance of the annulus has a third value greater than either the first value or the second value., and a central region. This arrangement is said to suppress lateral modes within the resonator.

RECESS FRAME STRUCTURE FOR A BULK ACOUSTIC WAVE RESONATOR

A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation, and in recessed frame regions disposed laterally on opposite sides of the central region. The piezoelectric film disposed in the recessed frame regions includes a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region.

METHOD OF ISOLATION FOR ACOUSTIC RESONATOR DEVICES

A method of isolating acoustic resonator devices with a piezoelectric material interposed between two conductors on a substrate is disclosed. Growth of piezoelectric material is limited to specified regions on the substrate during fabrication. The specified regions form isolated islands of piezoelectric material which are subsequently interconnected.

METHOD OF ISOLATION FOR ACOUSTIC RESONATOR DEVICES

A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric ...

Bulk-acoustic wave resonator

A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.

PIEZOELECTRIC THIN FILM RESONATOR AND FABRICATION METHOD OF THE SAME, FILTER, AND MULTIPLEXER

A piezoelectric thin film resonator includes: a substrate; lower and upper electrodes located on the substrate; a piezoelectric film that has a lower piezoelectric film mainly composed of aluminum nitride and an upper piezoelectric film mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, and a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; and an insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide. 1. A piezoelectric thin film resonator comprising:a substrate;a lower electrode and an upper electrode located on the substrate;a piezoelectric film that has a lower piezoelectric film, which is located on the lower electrode and is mainly composed of aluminum nitride, and an upper piezoelectric film, which is located on the lower piezoelectric film and is mainly composed of aluminum nitride, the lower piezoelectric film and the upper piezoelectric film being in contact with each other in at least a part of a resonance region where the lower electrode and the upper electrode face each other across at least a part of the piezoelectric film, a fluorine concentration at a boundary face with which the lower piezoelectric film and the upper piezoelectric film are in contact being 0.03 atomic % or less; andan insulating film that is located between the lower piezoelectric film and the upper piezoelectric film in a region other than the at least a part of the resonance region and contains silicon oxide.2. The piezoelectric thin film resonator according to claim 1 , whereinthe insulating film is ...

BULK-ACOUSTIC WAVE RESONATOR

A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer. 1. A bulk-acoustic wave resonator , comprising:a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; andan insertion layer disposed between the piezoelectric layer and the substrate in the extension portion,wherein the insertion layer comprises a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second insertion layer disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode, andwherein the first insertion layer is thinner than the second insertion layer.2. The bulk-acoustic wave resonator of claim 1 , whereinwidth of the first insertion layer/thickness of the first insertion layer >6,where the width of the first insertion layer is a distance between a terminal end of the first inclined surface of the first insertion layer and a ...

BULK ACOUSTIC WAVE FILTER DEVICE

A bulk acoustic wave filter device includes a resonating part, an electrode connecting part, a first layer, and a second layer. The resonating part is disposed on a substrate, and the electrode connecting part connects electrodes of the resonating part. The first layer is disposed on the substrate, and the second layer is disposed on regions of the first layer, other than a lower portion of the electrode connecting part. 1. A bulk acoustic wave filter device , comprising:a resonating part disposed on a substrate;an electrode connecting part connecting electrodes of the resonating part;a first layer disposed on the substrate; anda second layer disposed on regions of the first layer, other than a lower portion of the electrode connecting part.2. The bulk acoustic wave filter device of claim 1 , wherein the first layer is formed of silicon oxide (SiO) claim 1 , a material containing silicon oxide (SiO) claim 1 , aluminum nitride (AlN) claim 1 , or a material containing aluminum nitride (AlN) claim 1 , and the second layer is formed of silicon nitride (SiN) or a material containing SiN.3. The bulk acoustic wave filter device of claim 1 , wherein an air gap is disposed below the first layer claim 1 , disposed in a lower portion of the resonating part.4. The bulk acoustic wave filter device of claim 1 , wherein the resonating part comprises:a lower electrode disposed on the second layer;a piezoelectric layer disposed to cover a portion of the lower electrode; andan upper electrode disposed on the piezoelectric layer.5. The bulk acoustic wave filter device of claim 4 , further comprising:a frame layer disposed on the upper electrode.6. The bulk acoustic wave filter device of claim 5 , wherein the frame layer and the upper electrode are formed of the same material.7. The bulk acoustic wave filter device of claim 5 , further comprising:a third layer, disposed to cover the frame layer and the upper electrode.8. The bulk acoustic wave filter device of claim 5 , further ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator or filter device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside metal electrode overlying the top piezoelectric surface region;forming a topside micro-trench within a portion of the piezoelectric layer;forming a backside metal electrode underlying or in proximity of the bottom piezoelectric surface region within the substrate backside cavity region, the backside metal electrode being electrically coupled to a micro-via configured within the topside micro-trench; andremoving a portion of the piezoelectric layer to form a first topside groove on the top piezoelectric surface region.2. The method of wherein the piezoelectric layer comprises an essentially single crystal material or a ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:providing a substrate having a substrate surface region and a substrate backside cavity region characterized by a cavity geometric area;forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area; andforming a topside sandbar structure overlying the top ...

ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION

An acoustic resonator is disclosed. The acoustic resonator comprises a substrate, a first electrode, a second electrode and a piezoelectric layer positioned between the first electrode and the second electrode. An acoustic reflector is positioned between the first electrode and the substrate. An active area comprises a region of contacting overlap of the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode. A gap region extends around the active area. 1. An acoustic resonator , comprising:a substrate;a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode;an acoustic reflector positioned between the first electrode and the substrate; andan active area comprising a region of contacting overlap of the acoustic reflector, the first electrode, the piezoelectric layer and the second electrode, wherein a gap region extends around the active area.2. The acoustic resonator of claim 1 , wherein the acoustic resonator further comprises:a interconnection side comprising a bridge, wherein a bridge gap exists between the piezoelectric layer and the second electrode; anda plurality of non-connecting sides, each comprising a cantilever portion, wherein each cantilevered portion is disposed over a respective cantilever gap, and the gap region comprises the bridge gap and each of the cantilever gaps.3. The acoustic resonator of claim 1 , wherein the gap region comprises an air gap.4. The acoustic resonator of claim 1 , wherein the gap region comprises a low acoustic impedance material.5. The acoustic resonator of claim 1 , wherein the acoustic reflector comprises one of a cavity claim 1 , and a Bragg reflector.6. The acoustic resonator of claim 1 , the active area comprises a polygon having a plurality of sides.7. The acoustic resonator of claim 6 , wherein the second electrode comprises a bridge on an interconnection side claim 6 , wherein a bridge gap exists between the second ...

AIR-GAP TYPE FILM BULK ACOUSTIC RESONATOR

Disclosed is an air-gap type film bulk acoustic resonator (FBAR) including a substrate including an air-gap portion with a top surface in which a substrate cavity is formed, a lower electrode formed above the substrate while surrounding the air-gap portion, a piezoelectric layer formed above the lower electrode, and an upper electrode formed above the piezoelectric layer corresponding to a virtual area formed according to a vertical projection of the air-gap portion. Here, the piezoelectric layer includes a void portion having a piezoelectric cavity between the lower electrode and the upper electrode, and the void portion is formed below an edge portion corresponding to an end part of the upper electrode. 1. An air-gap type film bulk acoustic resonator (FBAR) comprising:a substrate comprising an air-gap portion with a top surface in which a substrate cavity is formed;a lower electrode formed above the substrate while surrounding the air-gap portion;a piezoelectric layer formed above the lower electrode; andan upper electrode formed above the piezoelectric layer corresponding to a virtual area formed according to a vertical projection of the air-gap portion,wherein the piezoelectric layer comprises a void portion having a piezoelectric cavity between the lower electrode and the upper electrode, andwherein the void portion is formed below an edge portion corresponding to an end part of the upper electrode.2. The air-gap type FBAR of claim 1 , wherein the void portion is a first void portion comprising a first piezoelectric cavity in which an opened top surface is formed to partially expose a bottom of the edge portion and a closed bottom surface is formed not to expose a top of the lower electrode.3. The air-gap type FBAR of claim 2 , wherein in the first void portion claim 2 , a first one side virtual surface perpendicularly extending from one side boundary wall forming the first piezoelectric cavity meets a lower inner area of the edge portion claim 2 , andwherein a ...

Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

BULK-ACOUSTIC WAVE RESONATOR

A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer. 1. A bulk-acoustic wave resonator , comprising:a substrate;a first electrode disposed on the substrate;a cavity disposed between the substrate and the first electrode;a piezoelectric layer covering at least a portion of the first electrode;a second electrode covering at least a portion of the piezoelectric layer;an insertion layer disposed between the first electrode and the piezoelectric layer; anda lower frame disposed in the cavity,wherein at least a portion of the lower frame overlaps the insertion layer.2. The bulk-acoustic wave resonator of claim 1 , wherein a medial side surface of the lower frame protrudes from a medial end of the insertion layer toward an active area in which the first electrode claim 1 , the piezoelectric layer claim 1 , and the second electrode overlap.3. The bulk-acoustic wave resonator of claim 1 , wherein a width of a region in which a medial end portion of the insertion layer and an end portion of the second electrode overlap is 0.2 μm to 0.8 μm.4. The bulk-acoustic wave resonator of claim 1 , wherein a distance between a medial end of the insertion layer and a medial end of the lower frame claim 1 , in a medial direction of the bulk-acoustic wave resonator claim 1 , is 0.4 μm to 1.2 μm.5. The bulk-acoustic wave resonator of claim 1 , wherein a thickness of the lower frame is 0.08 μm to 0.15 μm.6. The bulk-acoustic wave resonator of claim 1 , wherein a medial side surface of the lower frame is spaced apart from a medial end of the ...

ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part. 1. An acoustic resonator comprising:a resonating part comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; anda plurality of seed layers disposed on one side of the resonating part.2. The acoustic resonator of claim 1 , further comprising a substrate disposed on the opposite side of the resonating part from the plurality of seed layers.3. The acoustic resonator of claim 2 , wherein an air gap is disposed between the substrate and the plurality of seed layers.4. The acoustic resonator of claim 2 , wherein the resonating part further comprises a protection layer.5. The acoustic resonator of claim 2 , wherein a membrane is interposed between the substrate and the plurality of seed layers claim 2 , andan air gap is disposed between the substrate and the membrane.6. The acoustic resonator of claim 5 , wherein the membrane comprises a plurality of membrane layers claim 5 , andat least one membrane layer of the plurality of membrane layers is an etching stopper.7. The acoustic resonator of claim 1 , wherein the plurality of seed layers comprise a first seed layer and a second seed layer claim 1 ,the first seed layer comprises a material having the same crystalline system as a material of the piezoelectric layer, andthe second seed layer comprises a material having the same unit cell geometry as a material of the first seed layer.8. The acoustic resonator of claim 7 , wherein a thickness of the first seed layer or the second seed layer is within a range of 10 Å to 1 claim 7 ,000 Å.9. The acoustic resonator of claim 7 , wherein the piezoelectric layer claim 7 , the first seed layer claim 7 , and the second seed layer ...

Resonance apparatus for processing electrical loss using conductive material and method for manufacturing the same

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

ELECTRO-ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME

An electro-acoustic resonator comprises an acoustic mirror () disposed on a carrier substrate (), a bottom electrode () and a piezoelectric layer (). An aluminum seed layer () is disposed on the piezoelectric layer and a structured silicon dioxide flap layer () is disposed on the aluminum seed layer. The aluminum seed layer () increases the quality factor of the resonator and leads to enhanced RF filter performance. 1. An electro-acoustic resonator , comprising:a carrier substrate,an acoustic mirror disposed on the carrier substrate;a bottom electrode disposed on the acoustic mirror;a piezoelectric layer disposed on the bottom electrode;a seed layer comprising aluminum disposed on the piezoelectric layer;a structured silicon dioxide layer disposed on the seed layer; anda top electrode disposed on the piezoelectric layer.2. The electro-acoustic resonator according to claim 1 , wherein the structured silicon dioxide layer surrounds a region in which the top electrode is disposed.3. The electro-acoustic resonator according to claim 1 , wherein the structured silicon dioxide layer surrounds a region in which the silicon dioxide layer is removed and in which the top electrode is disposed.4. The electro-acoustic resonator according to claim 1 , wherein the top electrode comprises a layer stack comprising a bottom layer of tungsten claim 1 , an intermediate layer of a composition of aluminum and copper and a top layer of a metal nitride.5. The electro-acoustic resonator according to claim 1 , further comprising a metal overlap layer disposed on the structured silicon dioxide layer and extending underneath a portion of the top electrode layer claim 1 , wherein the metal overlap layer is disposed between the top electrode and the piezoelectric layer at said portion.6. The electro-acoustic resonator according to claim 5 , wherein the metal overlap layer comprises a layer stack of titanium and tungsten.7. The electro-acoustic resonator according to claim 1 , wherein the ...

BULK ACOUSTIC WAVE DEVICE WITH MULTI-GRADIENT RAISED FRAME

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides. 1. A bulk acoustic wave device with a multi-gradient raised frame , the bulk acoustic wave device comprising:a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode; anda multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced, the multi-gradient raised frame structure being tapered on opposing sides, and the bulk acoustic wave device being configured to generate a bulk acoustic wave.2. The bulk acoustic wave device of wherein the multi-gradient raised frame structure surrounds the main acoustically active region of the bulk acoustic wave device in plan view.3. The bulk acoustic wave device of wherein the multi-gradient raised frame structure has a non-gradient portion between two gradient portions.4. The bulk acoustic wave device of wherein the multi-gradient raised frame structure consists essentially of gradient portions.5. The bulk acoustic wave device of wherein the bulk acoustic wave device is a film bulk acoustic resonator.6. The bulk acoustic wave device of wherein the multi-gradient raised frame structure includes a plurality of raised frame layers.7. The bulk acoustic wave device of wherein the plurality of raised frame layers include a first raised frame layer and a second raised frame layer claim 6 , and the second raised frame layer extends beyond the first raised frame layer ...

MULTI-GRADIENT RAISED FRAME IN BULK ACOUSTIC WAVE DEVICE

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure. The multi-gradient raised frame structure includes a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposing sides. 1. A bulk acoustic wave device with a multi-gradient raised frame , the bulk acoustic wave device comprising:a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode; anda multi-gradient raised frame structure including a first raised frame layer and a second raised frame layer, the second raised frame layer extending beyond the first raised frame layer, and the second raised frame layer being tapered on opposing sides, and the bulk acoustic wave device being configured to generate a bulk acoustic wave.2. The bulk acoustic wave device of wherein the second raised frame layer extends beyond the first raised frame layer on the opposing sides claim 1 , and the opposing sides include a first side toward a main acoustically active region of the bulk acoustic wave device and a second side away from the main acoustically active region.3. The bulk acoustic wave device of wherein the first raised frame layer has a lower acoustic impedance than the piezoelectric layer.4. The bulk acoustic wave device of wherein the first raised frame layer includes an oxide claim 1 , and the second raised frame layer includes a metal.5. The bulk acoustic wave device of wherein the second raised frame layer incudes one or more of ruthenium claim 4 , molybdenum claim 4 , tungsten claim 4 , platinum claim 4 , or iridium.6. The bulk acoustic wave device of wherein the first raised ...

TWO-STAGE LATERAL BULK ACOUSTIC WAVE FILTER

Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack. 1. An acoustic wave filter device comprising:an acoustic reflector comprising one or more layers;an intermediary layer providing or on a topmost layer of the acoustic reflector, wherein the intermediary layer has a first region and a second region, the first region having a first layer thickness and the second region having a second layer thickness different from the first layer thickness; a first counter electrode on the first region of the intermediary layer,', 'a first piezoelectric layer on the first counter electrode, and', 'a first input electrode and a first output electrode on the first piezoelectric layer, the first input electrode and the first output electrode each having a first electrode thickness and extending substantially in parallel and separated by a first gap; and, 'a first multilayer stack on the acoustic reflector comprising'} a second counter electrode on the second region of the intermediary layer,', 'a second piezoelectric layer on the second counter electrode, and', 'a second input electrode and a second output electrode on the second piezoelectric layer, the ...

Lithium niobate or lithium tantalate fbar structure and fabricating method thereof

A method for fabricating a film bulk acoustic resonator (FBAR) structure includes: obtaining a wafer, at least a portion of the wafer is made of a piezoelectric material; forming a bottom electrode layer on the wafer; patterning the bottom electrode layer to form a bottom electrode; forming a sacrificial island on the bottom electrode; bonding a bottom cap wafer onto the bottom electrode; processing the wafer to form a piezoelectric layer; forming a top electrode layer on the piezoelectric layer; patterning the top electrode layer to form a top electrode; and removing the sacrificial island to form a cavity.

Bulk acoustic wave (baw) resonator with patterned layer structures, devices and systems

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

Bulk Acoustic Wave Resonator having a Central Feed

Example implementations of a bulk acoustic wave resonator having a central feed are disclosed. In an example aspect, a BAW resonator includes a bottom electrode having an upper surface. The BAW resonator also includes a volume of piezoelectric material having an upper surface and a lower surface, which is disposed on the upper surface of the bottom electrode. The BAW resonator further includes a top electrode having a large-surface layer having an upper surface and a lower surface. The lower surface of the large-surface layer is disposed on the upper surface of the volume of piezoelectric material with the large-surface layer overlapping at least a portion of the bottom electrode to form an active region of the BAW resonator. The top electrode also includes a small-surface layer having an upper surface and a lower surface. The lower surface of the small-surface layer is coupled to a portion of the upper surface of the large-surface layer. The small-surface layer couples a central portion of the top electrode to an electrode feed. 1. A resonator comprising: a bottom electrode , a volume of piezoelectric material , and a top electrode , the bottom-electrode small-surface layer coupled to a bottom electrode feed and positioned in a central portion of the bottom electrode; and', 'the bottom-electrode large-surface layer coupled to an upper surface of the bottom-electrode small-surface layer, the bottom-electrode large-surface layer extending laterally beyond the bottom-electrode small-surface layer; and, 'the bottom electrode coupled to a lower surface of the volume of piezoelectric material, the bottom electrode including a bottom-electrode small-surface layer and a bottom-electrode large-surface layer,'} the top-electrode large-surface layer coupled to an upper surface of the volume of piezoelectric material; and', 'the top-electrode small-surface layer coupled to a central portion of an upper surface of the top-electrode large-surface layer, the top-electrode small- ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR USING IMPROVED FABRICATION CONDITIONS, PERIMETER STRUCTURE MODIFICATIONS, AND THIN FILM TRANSFER PROCESS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate, the piezoelectric film having a top piezoelectric surface region and a bottom piezoelectric surface region;forming a first electrode overlying the piezoelectric film, the first electrode having one or more first electrode edges being characterized by a first electrode edge geometric shape;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer. the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer ...

Method for forming multiple bulk acoustic wave filters on shared die

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

BULK ACOUSTIC WAVE FILTER CO-PACKAGE

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed. 1. A multi-filter package comprising:a multi-filter die including at least a first filter and a second filter, the first filter including at least one bulk acoustic wave resonator;a packaging substrate supporting the multi-filter die;at least first, second, and third internal interconnect structures that provide electrical connections between an internal surface of the packaging substrate and an internal surface of the multi-filter die, at least one of the electrical connections providing a shared electrical connection for the first and second filters; anda packaging structure attached with the packaging substrate to form a package encapsulating the multi-filter die.2. The multi-filter package of wherein the second filter includes at least one bulk acoustic wave resonator.3. The multi-filter package of wherein the at least one bulk acoustic wave resonator of the first filter is in electrical communication with the at least one bulk acoustic wave resonator of the second filter by way of a conductive structure supported by the multi-filter die.4. The multi-filter package of wherein the shared electrical connection is a shared input/output port.5. The multi-filter package of wherein the shared electrical connection is an output of the first filter and an input to the second filter.6. The multi-filter package of wherein the shared electrical connection is a common node of a duplexer.7. The multi-filter package of wherein the first and second internal interconnect structures ...

MULTI-LAYER RAISED FRAME IN BULK ACOUSTIC WAVE DEVICE

Aspects of this disclosure relate to a bulk acoustic wave device that includes a multi-layer raised frame structure. The multi-layer raised frame structure includes a first raised frame layer positioned between a first electrode and a second electrode of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer and the second raised frame layer overlap in an active region of the bulk acoustic wave device. Related filters, multiplexers, packaged modules, wireless communication devices, and methods are disclosed. 1. A bulk acoustic wave device comprising:a first electrode;a second electrode;a piezoelectric layer positioned between the first electrode and the second electrode; anda multi-layer raised frame structure outside of a middle area of an active region of the bulk acoustic wave device, the multi-layer raised frame structure including a first raised frame layer and a second raised frame layer, the first raised frame layer being positioned between the first electrode and the second electrode, the first raised frame layer having a lower acoustic impedance than the first electrode, and the second raised frame layer overlapping with the first raised frame layer in the active region.2. The bulk acoustic wave device of wherein the first raised frame layer is configured to move a frequency of a raised frame mode away from a main resonant frequency of the bulk acoustic wave device.3. The bulk acoustic wave device of wherein the multi-layer raised frame structure is configured to block lateral energy leakage from the active region to a passive region of the bulk acoustic wave device.4. The bulk acoustic wave device of wherein the acoustic impedance of the first raised frame layer is lower than an acoustic impedance of the piezoelectric layer.5. The bulk acoustic wave device of wherein the first raised frame layer is a silicon dioxide layer.6. The bulk acoustic wave device of wherein ...

High q baw resonator with spurious mode suppression

A BAW resonator is provided wherein the top electrode (TE) has an outer flap (OF). The flap extends away from the active resonator region (AR) and has a projecting section that runs at a level above the piezoelectric layer (PL) that is higher than the level of the top electrode at any of the inwardly located areas enclosed by the outer flap. The higher level is formed by an intermediate step-forming material (SM) arranged between piezoelectric layer and top electrode in the outer flap. The step forming material comprises a structured layer of an acoustic impedance that is low w.r.t. the impedance of the top electrode and the piezoelectric layer.

Vibrator and oscillator

A vibrator includes: a vibration element that includes a pair of first excitation electrodes formed at the first vibration portion, a pair of second excitation electrodes formed at the second vibration portion, and a pair of third excitation electrodes formed at the third vibration portion, in which one second excitation electrode of the pair of second excitation electrodes is formed at a first inclined surface that is inclined with respect to two main surfaces, and one third excitation electrode of the pair of third excitation electrodes is formed at a second inclined surface that is inclined with respect to the two main surfaces and the first inclined surface; and a package that houses the vibration element. The vibration element includes a fixing portion to be fixed to the package. The fixing portion is provided between the first vibration portion and the second and third vibration portions.

Air-gap type fbar

An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.

Acoustic wave device

An acoustic wave device includes a piezoelectric member, a first and second electrodes on first and second main surfaces of the piezoelectric member, an acoustic reflection section including an air gap, and an additional mass film in at least one of areas on the first and second electrodes and an area outward of the first or second electrodes. A region where at least one of the first electrode and the additional mass film overlaps the second electrode includes a first region and a second region surrounding the first region. In the second region, a configuration of additional mass film portions on corresponding sides of a first direction in a plane of the piezoelectric member and a configuration of additional mass film portions on corresponding sides of a second direction in the plane of the piezoelectric member are different from each other.

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a backside energy confinement structure on the bottom piezoelectric surface, the backside energy confinement structure defined by a backside structure geometric area and a backside structure perimeter;a backside metal electrode on the bottom piezoelectric surface opposite the top metal electrode wherein the backside structure perimeter of the backside energy confinement structure is outside a perimeter of the backside metal electrode; anda resonator cavity in the substrate exposing the backside metal electrode.2. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a ...

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. An acoustic resonator device comprising:a substrate;a support layer overlying the substrate, the support layer having an air cavity;a first electrode overlying the air cavity and a portion of the support layer;a first passivation layer overlying the support layer and being physically coupled to the first electrode;a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;a second electrode formed overlying the piezoelectric film; anda top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via.2. The device of wherein the substrate includes silicon (S) claim 1 , silicon carbide (SiC) claim 1 , sapphire (AlO) claim 1 , silicon dioxide (SiO) claim 1 , or other silicon materials.3. The device of wherein the piezoelectric film is a single crystal or polycrystalline piezoelectric film that includes aluminum nitride (AlN) claim 1 , gallium nitride (GaN) claim 1 , AlGaN alloys claim 1 , or other epitaxial materials.4. The ...

FRONT END MODULE FOR 6.1 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

A front-end module (FEM) for a 6.1 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.1 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.1 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.1 GHz PA, a 6.1 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 6.1 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 6.1 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 6.1 GHz BAW resonator comprises'}a diversity switch electrically coupled the 6.1 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 6.1 GHz power amplifier providing power gain in the frequency spectrum from 5.17 GHz to 7.125 ...

ACOUSTIC RESONATOR

An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion. 1. An acoustic resonator comprising:a substrate;an insulation layer disposed on the substrate;a resonating portion disposed on the insulation layer and comprising a first electrode, a piezoelectric layer, and a second electrode, stacked thereon;a cavity disposed between the insulation layer and the resonating portion;a protruded portion comprising a plurality of protrusions disposed on a lower surface of the cavity; anda hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.2. The acoustic resonator according to claim 1 , wherein the protruded portion is disposed in a central region of the lower surface of the cavity.3. The acoustic resonator according to claim 2 , wherein the protruded portion comprises a shape corresponding to the lower surface of the cavity.4. The acoustic resonator according to claim 1 , wherein an area occupied by the protruded portion on the lower surface of the cavity is about 40% or more by area claim 1 , andan interval between the plurality of protrusions is about 2 μm to about 20 μm.5. The acoustic resonator according to claim 1 , wherein a width of the protrusion is 5 μm or less.6. The acoustic resonator according to claim 1 , wherein a height of the protrusion is 10 to 90% of a thickness of the cavity.7. The acoustic resonator according to claim 1 , wherein the protrusion has one or more of a cylindrical shape claim 1 , a polygonal column shape claim 1 , a truncated conical shape ...

Border ring mode suppression in solidly-mounted bulk acoustic wave resonator

Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed.

METHOD FOR FABRICATING BULK ACOUSTIC WAVE RESONATOR WITH MASS ADJUSTMENT STRUCTURE

A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure. 1. A method for fabricating a bulk acoustic wave resonator , comprising:forming a sacrificial structure mesa on a substrate;forming an insulating layer on said sacrificial structure mesa and said substrate;polishing said insulating layer to expose said sacrificial structure mesa;recessing a part of said sacrificial structure mesa to form a recess, wherein a sidewall of said recess is defined by a sidewall of said sacrificial structure mesa;forming a polish layer on said sacrificial structure mesa and said insulating layer, wherein said recess is filled with a first portion of said polish layer;forming a piezoelectric layer on said polish layer;forming a top electrode layer on said piezoelectric layer; andetching said sacrificial structure mesa to form a cavity, wherein said first portion of said polish layer serves as a mass adjustment structure on said cavity.2. The method according to claim 1 , wherein said recess is located on a peripheral part of said sacrificial structure mesa claim 1 , and a bottom surface of said first portion ...

STRUCTURE AND METHOD OF MANUFACTURE FOR ACOUSTIC RESONATOR OR FILTER DEVICES USING IMPROVED FABRICATION CONDITIONS AND PERIMETER STRUCTURE MODIFICATIONS

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics. 1. A bulk acoustic wave device comprising:a piezoelectric layer overlying a surface of a substrate, the piezoelectric layer having a top piezoelectric surface and a bottom piezoelectric surface;a top metal electrode on the top piezoelectric surface;a backside trench in the substrate exposing the bottom piezoelectric surface;a backside energy confinement structure underlying the bottom piezoelectric surface, the backside energy confinement structure defined by a backside structure geometric area and a backside structure perimeter; anda backside metal electrode underlying the bottom piezoelectric surface opposite the top metal electrode.2. The device of wherein the backside metal electrode is adjacent to the backside energy confinement structure.3. The device of wherein the backside energy confinement structure includes a backside structure break claim 1 , the device further comprising:a backside sandbar structure underlying the bottom piezoelectric surface adjacent to the backside structure break; wherein ...

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave (BAW) resonator includes: an acoustic reflector disposed in a substrate; a lower electrode disposed over the acoustic reflector; a piezoelectric layer disposed over the lower electrode; and an upper electrode disposed over the piezoelectric layer. A contacting overlap of the lower electrode, the piezoelectric layer and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator. An opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating. 1. A bulk acoustic wave (BAW) resonator , comprising:an acoustic reflector disposed in a substrate;a lower electrode disposed over the acoustic reflector;a piezoelectric layer disposed over the lower electrode; andan upper electrode disposed over the piezoelectric layer, a contacting overlap of the lower electrode, the piezoelectric layer, and the upper electrode over the acoustic reflector comprising an active area of the BAW resonator, wherein an opening exists in the upper electrode in a region of the BAW resonator susceptible to unacceptable overheating.2. The BAW resonator as claimed in claim 1 , wherein the opening does not extend into the piezoelectric layer.3. The BAW resonator as claimed in claim 1 , wherein the opening exists substantially in a central portion of the upper electrode.4. The BAW resonator as claimed in claim 1 , wherein the acoustic reflector is a cavity provided in the substrate.5. The BAW resonator as claimed in claim 1 , wherein the acoustic reflector comprises alternating low acoustic impedance and high acoustic impedance layers.6. The BAW resonator as claimed in claim 1 , wherein the opening has a substantially circular shape.7. The BAW resonator as claimed in claim 1 , wherein the opening has a substantially hexagonal shape.8. The BAW resonator as claimed in claim 1 , wherein the active area is increased by an areal dimension substantially equal to an areal dimension of the opening claim 1 , ...

5.5 GHz WI-FI 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators. 1. An RF filter circuit device , the device comprising:an input port;a first node coupled to the input port; a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,', 'a first bottom electrode within a portion of the first cavity region,', 'a first piezoelectric material overlying the first upper surface region and the first bottom electrode,', 'a first top electrode overlying the first single crystal material and overlying the first bottom electrode, and', 'a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;, 'a first resonator coupled between the first node and the input port, the first resonator comprising'}a second node coupled to the first node; a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second ...

Bulk-acoustic resonator and elastic wave filter device

A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.

BULK ACOUSTIC WAVE RESONATOR COMPRISING A RING

An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode; and a ring disposed between the substrate and the passivation layer 1. A bulk acoustic wave (BAW) resonator device , comprising:a first electrode disposed over a substrate;a piezoelectric layer disposed over the first electrode;a second electrode disposed over the piezoelectric layer, wherein the second electrode further comprises a raised frame element, or a recessed frame element, or both a raised frame element and a recessed frame element; anda ring disposed in either the first electrode, or in the second electrode, wherein the ring defines at least a portion of a perimeter along of an active region of the BAW resonator device.2. A BAW resonator device as claimed in claim 1 , wherein the ring is a first ring claim 1 , and the BAW resonator device further comprises a second ring disposed in the second electrode.3. A BAW resonator device as claimed in claim 2 , wherein the first ring claim 2 , or the second ring claim 2 , or both the first and second rings are filled with air.4. A BAW resonator device as claimed in claim 2 , wherein the first ring claim 2 , or the second ring claim 2 , or both the first and second rings are filled with a dielectric material.5. A BAW resonator device as claimed in claim 4 , wherein the dielectric material comprises one of non-etchable borosilicate glass (NEBSG) claim 4 , carbon doped silicon dioxide (CDO) claim 4 , or silicon carbide (SiC).6. A BAW resonator device as claimed in claim 2 , wherein the first ring is filled with a dielectric material claim 2 , and the first electrode terminates over a cavity disposed in the substrate.7. A BAW resonator device as claimed in claim 1 , wherein the ring is a first ring claim 1 , and the BAW resonator device further comprises a second ring ...

BULK ACOUSTIC WAVE RESONATOR

A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode. 1. A bulk acoustic wave resonator , comprising:a substrate;a membrane layer forming a cavity together with the substrate;a lower electrode disposed on the membrane layer;a piezoelectric layer disposed on a flat surface of the lower electrode; andan upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air,wherein the piezoelectric layer comprises a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.2. The bulk acoustic wave resonator of claim 1 , wherein a thickness of the step portion is less than half of an overall thickness of the piezoelectric layer.3. The bulk acoustic wave resonator of claim 1 , wherein a width w by which the step portion protrudes from the side of the piezoelectric layer satisfies w=n×λ/4(n=1 claim 1 , 3 claim 1 , 5 claim 1 , . . . ) claim 1 , andλ is a wavelength of a lateral wave occurring in an active area of the bulk acoustic wave resonator.4. The bulk acoustic wave resonator of claim 1 , wherein a first inclined surface is formed on the side of the piezoelectric layer claim 1 , and is disposed on the step portion.5. The bulk acoustic wave resonator of claim 4 , wherein the first inclined surface comprises an angle of inclination of 60° to 90° with respect to the membrane layer.6. The bulk acoustic wave resonator of claim 4 , wherein a second inclined surface is formed on a side of the step portion ...

PIEZOELECTRIC ACOUSTIC RESONATOR WITH DIELECTRIC PROTECTIVE LAYER MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer, the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;removing the growth substrate from the bonded device;forming a dielectric protection layer (DPL) overlying the piezoelectric layer;forming an electrode contact via within the piezoelectric film and the DPL overlying the first electrode on the bonded device;removing a portion of ...

Bulk acoustic wave resonator with piezoelectric layer comprising lithium niobate or lithium tantalate

A bulk acoustic wave (BAW) resonator includes a substrate defining a cavity, a bottom electrode disposed over the substrate and the cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer includes polycrystalline lithium niobate (LN) material or polycrystalline lithium tantalite (LT) material. The BAW resonator may further include an encapsulant layer formed on side and top surfaces of the piezoelectric layer. The encapsulant layer is configured to protect the LN material or the LT material of the piezoelectric layer from a release solvent previously applied to sacrificial material within the cavity in the substrate.

ACOUSTIC RESONATOR

An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar. 1. An acoustic resonator , comprising: a piezoelectric layer,', 'a first electrode disposed on a lower side of the piezoelectric layer, and', 'a second electrode disposed on an upper side of the piezoelectric layer;, 'a resonating unit comprising'}a substrate disposed below the resonating unit;a support unit forming a cavity between the substrate and the resonating unit; anda pillar extending through the cavity and connecting the resonating unit to the substrate,wherein the resonating unit further comprises a first insertion layer disposed above the pillar.2. The acoustic resonator of claim 1 , further comprising a first etch stop layer disposed between the support unit and the cavity.3. The acoustic resonator of claim 1 , wherein the pillar comprises:a second etch stop layer disposed in the cavity and disposed between the resonating unit and the substrate; anda thermally conductive layer surrounded by the second etch stop layer and formed of a material different from a material of the second etch stop layer.4. The acoustic resonator of claim 1 , wherein a hole is located above the pillar and is disposed in either one or both of the first electrode and the second electrode.5. The acoustic resonator of claim 4 , further comprising:a frame disposed on an upper side of the first electrode or an upper side of the second electrode, and disposed to surround the hole; anda second insertion layer disposed further outwardly from the pillar in a ...

Piezoelectric thin film resonator, filter, and multiplexer

A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted between the lower electrode and the upper electrode, is located in an outer peripheral region within a resonance region where the lower electrode and the upper electrode face each other across the piezoelectric film, is located in a region that is located outside the resonance region and surrounds the resonance region, is not located in a center region of the resonance region, and includes a first part, which is located in the resonance region and has a first film thickness, and a second part, which is located outside the resonance region and has a second film thickness, the first film thickness being less than the second film thickness.

Resonance apparatus for processing electrical loss using conductive material and method for manufacturing the same

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Bulk Acoustic Wave Resonator having a Lateral Energy Barrier

Bulk acoustic wave resonators having a lateral energy barrier are disclosed. In an example aspect, a resonator includes a volume of piezoelectric material, a bottom electrode, a top electrode, and a reflector. The bottom electrode is disposed below a portion of a lower surface of the volume of piezoelectric material. The top electrode is disposed above a portion of an upper surface of the volume of piezoelectric material with a portion of the top electrode overlapping a portion of the bottom electrode to define an active region of the volume of piezoelectric material configured to resonate acoustic waves having frequencies within a specified passband. The reflector is disposed on an upper surface of the volume of piezoelectric material outside of the active region with the reflector configured as a lateral energy barrier to reflect laterally propagating acoustic waves having frequencies within the specified passband. 1. A resonator comprising:a volume of piezoelectric material having an upper surface and a lower surface;a bottom electrode disposed below a portion of the lower surface of the volume of piezoelectric material;a top electrode disposed above a portion of the upper surface of the volume of piezoelectric material, a portion of the top electrode overlapping a portion of the bottom electrode, the overlapping defining an active region of the volume of piezoelectric material, the active region configured to resonate acoustic waves having frequencies within a specified passband; anda reflector disposed outside of the active region, the reflector configured as a lateral energy barrier to reflect laterally propagating acoustic waves having frequencies within the specified passband.2. The resonator of claim 1 , wherein the reflector is substantially parallel to an edge of an upper surface of the active region.3. The resonator of claim 1 , wherein the reflector includes multiple reflector elements.4. The resonator of claim 3 , wherein at least one reflector element ...

WIRELESS COMMUNICATION INFRASTRUCTURE SYSTEM CONFIGURED WITH A SINGLE CRYSTAL PIEZO RESONATOR AND FILTER STRUCTURE USING THIN FILM TRANSFER PROCESS

A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device formed with a thin film transfer process with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well. 1. A fixed wireless communication system comprising:a controller;a power source coupled to the controller;a baseband signal processing module coupled to the controller; an RF transmit module coupled to the baseband signal processing module and configured on a transmit path, wherein the RF transmit module includes a transmit filter having one or more filter devices, each of the one or more filter devices comprising a single crystal acoustic resonator device;', 'an RF receive module coupled to the baseband signal processing module, and configured on a receive path, wherein the RF receive module includes a receive filter;, 'one or more transceiver modules, each of the transceiver modules comprising'}an antenna coupled to each of the RF transmit modules and each of the RF receive modules;an antenna control device coupled to each of the receive paths and each of the transmit paths, and configured to select one of the receive paths or one of the transmit paths, wherein the antenna control device is coupled to the one or more transceiver ...

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. An acoustic resonator device comprising:a bond substrate;a bonding support layer overlying the bond substrate;a support layer overlying the bonding support layer, the support layer having an air cavity;a first electrode overlying the air cavity and a portion of the support layer;a first passivation layer overlying the support layer and being physically coupled to the first electrode;a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;a second electrode formed overlying the piezoelectric film;a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via;a first contact metal formed overlying a portion of the second electrode and the piezoelectric film;a second contact metal formed overlying a portion of the top metal and the piezoelectric film; anda second passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal.2. The device of wherein the growth substrate and bond ...

Film Bulk Acoustic Resonator with Spurious Resonance Suppression

Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region. 1. A bulk acoustic resonator , comprising: a piezoelectric layer having a first side and an opposing second side;', 'a first electrode coupled to the first side of the piezoelectric layer; and', 'a second electrode coupled to the second side of the piezoelectric layer;, 'a stack that includeswherein an active region of the stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode; andwherein the bulk acoustic resonator further comprises one or more perforations arranged around a perimeter of the active region to impede propagation of lateral acoustic waves.2. The bulk acoustic resonator of claim 1 , wherein a respective perforation of the one or more perforations extends depthwise at least partially through the piezoelectric layer.3. The bulk acoustic resonator of claim 2 , wherein the respective perforation extends depthwise through the piezoelectric layer.4. The bulk acoustic resonator of claim 2 , wherein the respective perforation extends depthwise through the second electrode and the piezoelectric layer.5. The bulk acoustic resonator of claim ...

Bulk acoustic wave resonators having doped piezoelectric material and frame elements

A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.

BULK ACOUSTIC WAVE RESONATOR

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit. 1. A film bulk acoustic wave resonator (BAWR) , comprising: a first electrode,', 'a second electrode, and', 'a piezoelectric layer disposed between the first electrode and the second electrode;, 'a resonance unit comprising'}an air gap disposed below the resonance unit; andan air edge provided distant from a center of the resonance unit to interface with the air gap before an edge of the air gap,wherein the air gap is configured to reflect acoustic waves of the resonance unit in a vertical direction and the air edge is configured to reflect acoustic waves of the resonance unit in a horizontal direction.2. The BAWR of claim 1 , wherein the air edge partially surrounds the resonance unit.3. The BAWR of claim 2 , wherein the air edge partially surrounds more than 20% of the resonance unit.4. The BAWR of claim 3 , further comprising an additional air edge claim 3 , where the air edge and the additional air edge together surround at least 60% of the resonance unit.5. The BAWR of claim 1 , further comprising an additional air edge claim 1 , with the air edge and the additional air edge partially surrounding the resonance unit.6. The BAWR of claim 5 , further comprising a frame aligned over an outer portion of the first electrode in the resonance unit.7. The BAWR of claim 5 , further comprising a frame claim 5 , aligned over an outer portion of the first electrode in the resonance unit claim 5 , etched in a form of a finger.8. The BAWR of claim 5 , wherein the second electrode comprises:a portion in a form of a finger, in contact with a portion of the resonance unit; anda patterned portion exposed to the air edge.9. The ...

Two-stage lateral bulk acoustic wave filter

Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.

BULK ACOUSTIC WAVE RESONATOR

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit. 1. A bulk acoustic wave resonator (BAWR) , comprising:a bulk acoustic wave resonance unit comprising a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode;an air gap disposed below the bulk acoustic wave resonance unit;an air edge formed at a distance from a center of the bulk acoustic wave resonance unit; anda frame aligned over an outer portion of the first electrode in the bulk acoustic wave resonance unit.2. The BAWR of claim 1 , wherein at least one of the first electrode and the second electrode comprises:a portion in a form of a finger, in contact with a portion of the bulk acoustic wave resonance unit and a patterned portion exposed to the air edge.3. The BAWR of claim 1 , wherein the frame is a U-shaped frame.4. The BAWR of claim 3 , wherein the U-shaped frame is formed at a portion where the first electrode and a protective layer are in contact by a locally etching of the protective layer.5. The BAWR of claim 3 , wherein the U-shaped frame is formed at a portion where the second electrode and a protective layer are in contact by a locally etching of the protective layer.6. The BAWR of claim 1 , further comprising:a passivation layer disposed on or below one of the piezoelectric layer, the first electrode, or the second electrode.7. The BAWR of claim 1 , wherein the air edge is formed on a portion of an edge of the bulk acoustic wave resonance unit claim 1 , the portion of the edge being greater than or equal to 20% of the edge of the bulk acoustic wave resonance unit.8. The BAWR of claim 7 , further comprising an additional air edge ...

Piezoelectric thin film resonator, filter, and duplexer

A piezoelectric thin film resonator includes: lower and upper electrodes located on a substrate and facing each other; a piezoelectric film sandwiched between the lower and upper electrodes and including lower and upper piezoelectric films, an outer outline of the upper piezoelectric film coinciding with or being located further out than an outer outline of a resonance region in a region surrounding the resonance region, the outer outline of the upper piezoelectric film being located further in than an outer outline of the lower piezoelectric film in the region; an insertion film interposed between the lower and upper piezoelectric films, located in an outer peripheral region within the resonance region, not located in a central region of the resonance region, and located on an upper surface of the lower piezoelectric film in the region; and a protective film located on the upper electrode in the resonance region, and located so as to cover an end face of the upper piezoelectric film and an upper surface of the insertion film in the region.

Bulk-acoustic wave resonator and bulk-acoustic wave filter device

A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer covering at least a portion of the first electrode, and a second electrode covering at least a portion of the piezoelectric layer. When an active region, in which the first electrode and the second electrode are disposed to overlap each other, is viewed from above, among four sides of a rectangle with which at least three vertices of a polygon formed by the active region are in contact, a longest side is defined as a side B and a side connected to side B is defined as a side A, and an aspect ratio (side B/side A) is 1.3 to 3.

RADIO FREQUENCY MULTIPLEXER

Disclosed is a radio frequency multiplexer having an M number of multiplexer branches each having an outer port terminal coupled to a common outer node, wherein M is a positive counting number. Each of the M number of multiplexer branches comprises a multi-bandpass filter configured to filter an N number of bands multiplexed by the radio frequency multiplexer to pass an individual group of N/M bands, wherein N is a positive counting number greater than one and equal to a total number of bands to be multiplexed. Each of the M number of multiplexer branches further includes an N/M number of resonator branches each having a band port terminal configured to pass a single band and an inner branch terminal coupled to an inner port terminal of the multi-bandpass filter at a common inner node. 1. A radio frequency multiplexer comprising: a multi-bandpass filter configured to filter an N number of bands multiplexed by the radio frequency multiplexer to pass an individual group of N/M bands, wherein N is a positive counting number greater than one; and', 'an N/M number of resonator branches each having a band port terminal configured to pass a single band and an inner branch terminal coupled to an inner port terminal of the multi-bandpass filter at a common inner node., 'an M number of multiplexer branches each having an outer port terminal coupled to a common outer node, wherein M is a counting number greater than one and each of the M number of multiplexer branches comprises2. The radio frequency multiplexer of wherein the multi-bandpass filter comprises a plurality of series resonators coupled in parallel between the inner port terminal and the outer port terminal claim 1 , wherein the plurality of series resonators is configured to provide low impedance paths between the outer port terminal and the inner port terminal for the individual group of N/M bands passed by the multi-bandpass filter and also to provide substantially higher impedance to undesired bands of ...

Solidly mounted layer thin film device with grounding layer

An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. The low resistivity layer is between at least a portion of the substrate and the thin film piezoelectric layer. By providing the low resistivity layer between at least a portion of the substrate and the thin film piezoelectric layer, a spurious response of the apparatus may be significantly reduced, thereby improving the performance thereof.

Filter device, rf front-end device and wireless communication device

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a support layer overlying the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;etching the support layer to form an air cavity;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;removing the growth substrate;forming an electrode contact via within the piezoelectric film overlying the first electrode on the bonded device;forming a second electrode layer overlying the piezoelectric film and within the contact via;etching the second electrode layer to form a top metal separated from a second electrode, wherein the top metal is physically coupled to the ...

PIEZOELECTRIC ACOUSTIC RESONATOR WITH IMPROVED TCF MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric film overlying a growth substrate;forming a first electrode overlying the piezoelectric film;forming a first passivation layer overlying the first electrode and the piezoelectric film;forming a sacrificial layer overlying the first passivation layer, the first electrode, and the piezoelectric film;forming a support layer overlying the sacrificial layer, the first passivation layer, the first electrode, and the piezoelectric film thereby forming a device on the growth substrate;polishing the support layer;forming a bonding support layer overlying a bond substrate;flipping the device on the growth substrate and bonding the polished support layer to the bonding support layer thereby forming a bonded device;removing the growth substrate from the bonded device;forming a first temperature compensation layer (TCL) overlying the piezoelectric layer;forming an electrode contact via within the piezoelectric film and the first TCL overlying the first ...

Coupled resonator filter with embedded border ring

A coupled resonator filter includes a first resonator, a second resonator, one or more intervening layers, a first border ring, and a second border ring. The first resonator includes a first piezoelectric layer and a first electrode in contact with the first piezoelectric layer. The second resonator includes a second piezoelectric layer and a second electrode in contact with the second piezoelectric layer. The one or more intervening layers are between the first resonator and the second resonator and acoustically couple the first resonator and the second resonator. The first border ring is on the first electrode. The second border ring is on the second electrode. By providing both the first border ring and the second border ring, spurious modes in the coupled resonator filter may be suppressed, thereby improving the performance thereof.

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities. 1. A method for fabricating an acoustic resonator device , the method comprising:forming a piezoelectric layer overlying a substrate member;forming one or more first electrodes overlying the piezoelectric layer;forming a sacrificial layer overlying the one or more first electrodes and the piezoelectric layer;forming a support layer overlying the sacrificial layer, the one or more first electrodes, and the piezoelectric layer thereby forming one or more devices on the substrate member;polishing the support layer;forming one or more cavities within the support layer to expose one or more portions of the sacrificial layer overlying the one or more first electrodes;removing the sacrificial layer to release one or more cavities in the support layer around the one or more first electrodes; andforming a bond substrate overlying the support layer to enclose the one or more cavities in the support layer with the one or more first electrodes thereby forming one or more encapsulated devices.2. The method of wherein the substrate member claim 1 , the support layer claim 1 , and the bond substrate include silicon (S) claim 1 , silicon carbide (SiC) claim 1 , sapphire (AlO) claim 1 , silicon dioxide (SiO) claim 1 , ...

FRONT END MODULE FOR 5.5 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

A front end module (FEM) for a 5.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.5 GHz PA, a 5.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 5.5 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 5.5 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 5.5 GHz BAW resonator comprises'}a diversity switch electrically coupled the 5.5 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 5.5 GHz power amplifier.3. The device of wherein the 5.5 GHz BAW resonator comprises a 5.5 GHz ...

FRONT END MODULE FOR 6.5 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

A front end module (FEM) for a 6.5 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 6.5 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 6.5 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 6.5 GHz PA, a 6.5 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device. 1. A 6.5 GHz front end module (FEM) device , the device comprising:a power amplifier (PA) electrically coupled to an input node; a substrate;', 'a support layer overlying the substrate, the support layer having an air cavity;', 'a first electrode overlying the air cavity and a portion of the support layer;', 'a first passivation layer overlying the support layer and being physically coupled to the first electrode;', 'a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;', 'a second electrode formed overlying the piezoelectric film; and', 'a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via; and, 'a 6.5 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 6.5 GHz BAW resonator comprises'}a diversity switch electrically coupled the 6.5 GHz BAW resonator, an output node, and an antenna.2. The device of wherein the PA comprises a 6.5 GHz power amplifier.3. The device of wherein the 6.5 GHz BAW resonator comprises a 6.5 GHz ...

Baw resonator with increased quality factor

A BAW resonator comprises a center area (CA), an underlap region (UL) surrounding the center area having a thickness smaller than the thickness dC of the center region and a frame region (FR), surrounding the underlap region having thickness dF greater than dC.

5.9 GHz C-V2X AND DSRC ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

BULK ACOUSTIC RESONATOR AND FILTER INCLUDING THE SAME

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less. 1. A bulk acoustic resonator , comprising:a substrate comprising an upper surface on which a substrate protection layer is disposed; anda membrane layer forming a cavity together with the substrate,wherein a thickness of either one or both of the substrate protective layer and the membrane layer increases from an edge of an active region of the bulk acoustic resonator to a center of the active region.2. The bulk acoustic resonator of claim 1 , wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.3. The bulk acoustic resonator of claim 1 , wherein either one or both of the substrate protection layer and the membrane layer comprise:{'sub': 2', '2', '2', '3', '2, 'a dielectric layer comprising any one or any combination of any two or more of manganese oxide (MgO), zirconium oxide (ZrO), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO), aluminum oxide (AlO), titanium oxide (TiO), and zinc oxide (ZnO); or'}a metal layer comprising any one or any combination of any two or more of aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), gallium (Ga), and hafnium (Hf).4. The bulk acoustic resonator of claim 3 , wherein the membrane layer comprises the dielectric layer claim 3 , and the substrate protection layer comprises either one of silicon nitride and silicon oxide.5. The bulk acoustic resonator of claim 3 , wherein the substrate protection layer comprises the dielectric layer claim 3 , and the membrane layer comprises either one of silicon nitride and silicon oxide.6. The bulk acoustic resonator of claim 1 , further comprising:a ...

ACOUSTIC WAVE RESONATOR

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity. 1. An acoustic wave resonator , comprising:a resonance part disposed on and spaced apart from a substrate by a cavity, the resonance part comprising a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked on the cavity,wherein a thickness deviation of the membrane layer is expressed as 0 Å<ΔMg<170 Å, where ΔMg is a difference between a maximum layer thickness and a minimum layer thickness of the membrane layer disposed on the cavity,wherein the cavity comprises one or more tunnels respectively traversing partially below the membrane layer to connect a periphery of the cavity to the outside.2. The acoustic wave resonator of claim 1 , wherein 30 μm Ra/Hw≤200 is satisfied claim 1 , Ra being a total area (μm2) within a perimeter of a resonance active region of the resonance part claim 1 , and Hw being a total length (μm) of the one or more tunnels along the perimeter of the resonance active region.3. The acoustic wave resonator of claim 2 , wherein Ra/Hw is greater than 125 μm.4. The acoustic wave resonator of claim 2 , wherein Ra/Hw is less than 175 μm.5. The acoustic wave resonator of claim 2 , wherein Ra/Hw is less than 160 μm.6. The acoustic wave resonator of claim 1 , wherein a portion of the cavity internal of a perimeter of the cavity claim 1 , including portions vertically aligned with a resonance active region of the resonance part claim 1 , has a cavity vertical gap deviation claim 1 ,where the cavity vertical gap deviation is within a range of 10 Å<ΔCg≤340 Å, where ΔCg is a difference between a ...

ACOUSTIC WAVE RESONATOR

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity. 1. An acoustic wave resonator , comprising:a resonance active region spaced apart from a substrate by a cavity, the resonance active region comprising a sequentially stacked first electrode layer, piezoelectric layer, and second electrode layer;a membrane layer, wherein a portion of the membrane layer forms an upper side portion of the cavity; andplural passages respectively connecting the cavity to an outside, each of the plural passages including a respective outside access to the outside, separated from a perimeter of the resonance active region, and a respective cavity access of the cavity,wherein the portion of the membrane layer includes a thickness deviation ΔMg, the thickness deviation ΔMg being a difference between a maximum layer thickness and a minimum layer thickness of the portion of the membrane layer, and where 0 Å<ΔMg<170 Å.2. The acoustic wave resonator of claim 1 , further comprising a frame formed on the second electrode claim 1 , and the perimeter of the resonance active region is within a perimeter of the frame.3. The acoustic wave resonator of claim 1 , wherein the plural passages each respectively radiate outward from the respective cavity accesses in a direction toward a periphery of the cavity claim 1 , with each of the respective outside accesses having a respective non-curved or curved opening length.4. The acoustic wave resonator of claim 1 , further comprising respective connection electrodes claim 1 , connecting to outside of the resonance active region claim 1 , of the first electrode and the second electrode claim 1 ,wherein a total ...

FILM BULK ACOUSTIC WAVE RESONATORS AND FABRICATION METHODS THEREOF

A film bulk acoustic wave resonator (BAWR) includes a first substrate; a first insulating material layer; and a first cavity, formed in the first insulating material layer. The film BAWR also includes a first electrode containing a first electrode cavity; a second electrode containing a second electrode cavity; and a first piezoelectric oscillation plate, sandwiched between the first electrode and the second electrode. Without having any parallel edges, the boundary of the first piezoelectric oscillation plate is entirely enclosed in the first cavity boundary, and at least includes an overlapping region of the boundary of the first electrode cavity and the boundary of the second electrode cavity. The film BAWR further includes a plurality of second and third piezoelectric oscillation plates, disposed between the first electrode and the second electrode to receive and absorb vibration energy transmitted out through vibration waves induced in the first electrode and the second electrode. 1. A film bulk acoustic wave resonator (BAWR) , comprising:a first substrate;a first insulating material layer, formed on the first substrate;a first cavity, formed in the first insulating material layer with an opening facing away from the first substrate, wherein the first cavity forms a first cavity boundary at a surface of the first insulating material layer;a first electrode and a second electrode stacked on the first insulating material layer, wherein the first electrode includes a first electrode cavity formed above the first cavity, and the second electrode includes a second electrode cavity formed above the first cavity;a first piezoelectric oscillation plate sandwiched between the first electrode and the second electrode, and having a first piezoelectric-oscillation-plate boundary, wherein at least a portion of the first piezoelectric-oscillation-plate boundary is an overlapping region of a portion of a boundary of the first electrode cavity and a portion of a boundary of ...

METHOD FOR FORMING FILM BULK ACOUSTIC RESONATOR

Methods for forming a film bulk acoustic resonator (FBAR) are provided. In the method, formation of several mutually overlapped and hence connected sacrificial material layers above and under a resonator sheet facilitates the removal of the sacrificial material layers. Cavities left after the removal overlap at a polygonal area with non-parallel sides. This reduces the likelihood of boundary reflections of transverse parasitic waves causing standing wave resonance in the FBAR, thereby enhancing its performance in parasitic wave crosstalk. Further, according to the disclosure, the FBAR is enabled to be integrated with CMOS circuitry and hence exhibits higher reliability. 1. A method of fabricating a film bulk acoustic resonator , comprising:providing a substrate;forming on the substrate a first sacrificial material layer and a first insulating material layer surrounding the first sacrificial material layer;forming a resonator sheet on the first sacrificial material layer, wherein the resonator sheet partially extends over the first insulating material layer;forming on the resonator sheet a second sacrificial material layer and a second insulating material layer surrounding the second sacrificial material layer, wherein the second sacrificial material layer partially overlies the first sacrificial material layer, and wherein projections of the second sacrificial material layer and the first sacrificial material layer along a direction normal to the substrate overlap at a polygonal area;forming a capping layer; andforming an opening in the capping layer and removing the second sacrificial material layer and the first sacrificial material layer via the opening.2. The method according to claim 1 , wherein the resonator sheet does not completely cover the first sacrificial material layer so that the first sacrificial material layer is partially exposed.3. The method according to claim 1 , wherein removing the first sacrificial material layer is accomplished using a path ...

FILM BULK ACOUSTIC RESONATOR

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer. 1. A film bulk acoustic resonator , comprising:a substrate;a first insulating material layer on the substrate, the first insulating material layer containing a first cavity;a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity;a resonator sheet covering the second cavity and partially extending over the second insulating material layer;a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, the fourth cavity partially overlapping the second cavity; anda capping layer on the third insulating material layer.2. The resonator according to claim 1 , wherein projections of the fourth cavity and the second cavity along a direction normal to the substrate overlap at a ...

PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities. 1. A bulk acoustic resonator device , the device comprising:a multilayer reflector structure including two pairs of a low impedance material layer and a high impedance material layer;a first electrode including tungsten overlying the multilayer reflector structure;a piezoelectric film including aluminum scandium nitride overlapping the first electrode and overlying the multilayer reflector structure;a second electrode including tungsten overlapping the piezoelectric film, overlapping the first electrode, and overlying the multilayer reflector, the second electrode having a thickness and including an electrode cavity, the thickness of the second electrode away from the electrode cavity being thicker when compared to the thickness of the second electrode within the electrode cavity, the electrode cavity of the second electrode overlying the overlapping portions of the second electrode, the piezoelectric film, and the first electrode; anda passivation layer including silicon nitride overlying the second electrode.2. The device of claim 1 , further comprising a mass loaded structure overlying the second electrode claim 1 , and located away from the overlapping area of the second electrode including tungsten ...

Acoustic wave devices with common ceramic substrate

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME

An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region. 1. An acoustic wave device , comprising:a POI structure comprising: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, wherein a substrate is a lowermost high acoustic velocity layer; and a first piezoelectric layer located above the material layer where the high acoustic velocity layer and the low acoustic velocity layer are alternate, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer is higher than an acoustic velocity of a bulk wave of the first piezoelectric layer, and an acoustic velocity of a bulk wave propagated in the low acoustic velocity layer is lower than the acoustic velocity of the bulk wave of the first piezoelectric layer;wherein the POI structure comprises at least two regions, the two regions are respectively a first region and a second region, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a ...

Film bulk acoustic wave resonator and manufacturing method of it

개시된 FBAR은 기판; 기판의 상면에 형성된 하부 전극; 하부 전극의 상면에 형성되며 음향파가 하부 전극으로 진행할 때 전반사가 일어나는 기울기로 형성된 결정축을 갖는 압전막; 및 압전막의 상면에 형성된 상부 전극;을 포함하며, 압전막은 밀한 매질로 형성되고, 하부 전극은 소한 매질로 형성된다. The disclosed FBARs include a substrate; A lower electrode formed on the upper surface of the substrate; A piezoelectric film formed on an upper surface of the lower electrode, the piezoelectric film having a crystal axis formed with an inclination in which total reflection occurs when acoustic waves travel to the lower electrode; And an upper electrode formed on an upper surface of the piezoelectric film, wherein the piezoelectric film is formed of a dense medium, and the lower electrode is formed of a small medium.

Bulk-acoustic wave resonator

본 발명의 실시예에 따른 체적 음향 공진기는, 기판 상에 제1 전극, 압전층, 제2 전극이 순차적으로 적층된 중앙부와, 상기 중앙부의 둘레를 따라 배치되는 확장부로 구성되는 공진부 및 상기 확장부에서 상기 압전층의 하부에 배치되어 상기 압전층을 융기시키는 삽입층을 포함하며, 상기 삽입층은 상기 중앙부와 마주보는 측면을 따라 제1 경사면이 형성되는 제1 삽입층 및 상기 제1 삽입층의 상부에 배치되고 상기 제1 경사면과 이격 배치되는 제2 경사면을 구비하는 제2 삽입층을 포함하고, 상기 제1 삽입층은 상기 제2 삽입층보다 얇은 두께를 가질 수 있다. A volume acoustic resonator according to an embodiment of the present invention includes a resonator and the extension comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension disposed along the periphery of the central portion. and an insertion layer disposed under the piezoelectric layer in the portion to elevate the piezoelectric layer, wherein the insertion layer includes a first insertion layer and a first insertion layer in which a first inclined surface is formed along a side surface facing the central portion and a second insertion layer disposed on top of and having a second inclined surface spaced apart from the first inclined surface, wherein the first insertion layer may have a thickness smaller than that of the second insertion layer.

Acoustic resonator

본 발명의 일 실시 예에 따른 음향 공진기는, 압전층과 압전층의 하측 및 상측에 각각 배치된 제1 및 제2 전극을 포함하는 공진부; 공진부의 하측에 배치된 기판; 기판과 공진부의 사이의 캐비티(cavity)를 제공하는 지지부; 지지부와 캐비티의 사이에 배치된 제1 식각 저지층; 및 캐비티 내에 배치되고 공진부와 기판의 사이에 배치된 제2 식각 저지층과, 제2 식각 저지층에 의해 둘러싸이고 제2 식각 저지층과 다른 재료로 구성된 열전도층을 포함하는 기둥을 포함하고, 제1 및 제2 전극 중 적어도 하나는 기둥의 상측에 위치하는 구멍을 가질 수 있다. An acoustic resonator according to an embodiment of the present invention includes a resonator including a piezoelectric layer and first and second electrodes disposed below and above the piezoelectric layer, respectively; a substrate disposed under the resonator; a support for providing a cavity between the substrate and the resonator; a first etch stop layer disposed between the support and the cavity; and a column including a second etch stop layer disposed in the cavity and disposed between the resonator and the substrate, and a heat conductive layer surrounded by the second etch stop layer and made of a material different from the second etch stop layer, At least one of the first and second electrodes may have a hole positioned above the pillar.

Acoustic wave resonator and filter including the same

本公开提供一种声波谐振器及包括该声波谐振器的滤波器。所述声波谐振器包括：谐振部，设置在基板上并且通过腔与所述基板分开，所述谐振部包括顺序地堆叠的膜层、第一电极、压电层和第二电极。满足 ΔMg为位于所述腔上方的所述膜层的最大厚度和最小厚度之差。

Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector

A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack.

Accoustic resonator having composite electrodes with integrated lateral features

A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch.

Acoustic wave device and filtering equipment

本申请公开了一种声波器件，包括由下至上依次层叠的衬底、下电极层、压电层、上电极层，其中，所述衬底对应所述上电极层的区域分布有空气腔；所述上电极层的引出部形成有第一空气桥，所述上电极层的边缘和内部形成有第一悬臂梁，且位于内部的所述第一悬臂梁设置有贯穿厚度的通孔；或者所述空气腔的数量为多个；或者所述上电极层具有沿水平方向分布的凹部。本申请中的声波器件可以有效减少体声波器件在大功率下的温度升高和温度梯度变化，提升器件的功率容量。此外，本申请还提供一种具有上述优点的滤波设备。

Resonator and method for providing resonator

압전 재료(10) 상에 제공되는 제 1 전극 및 제 2 전극(11, 12)을 갖는 압전 재료(10)를 포함하는 공진기가 설명된다. 음향 메타재료(14)는 상기 공진기의 활성 영역(13)을 적어도 부분적으로 둘러싼다.

Piezoelectric resonator structures and electrical filters having frame elements

Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.

Acoustic resonator having collar structure

A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.

Acoustic resonator comprising collar and frame

An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region, and a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region.

Acoustic resonator having guard ring

A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode.

Bulk acoustic wave resonator having electrode with void layer, filter, and electronic device

本发明涉及一种体声波谐振器，包括：基底；声学镜；底电极；顶电极；和压电层，设置在底电极与顶电极之间，其中：底电极和顶电极中的一个为第一间隙电极，第一间隙电极具有第一电极与第二电极，第一电极与压电层面接触，第二电极远离压电层，且空隙层在谐振器的厚度方向上位于第一电极与第二电极之间，第一电极与第二电极在电连接部处电连接，电连接部限定空隙层的边界的至少一部分。谐振器还包括电学隔离部，电连接部在谐振器的厚度方向上的投影落入电学隔离部之内，电学隔离部的内侧用于限定谐振器的有效区域在谐振器的横向方向上的边界。本发明还涉及一种具有上述谐振器的滤波器以及具有该滤波器或谐振器的电子设备。

Bulk-acoustic wave resonator

본 발명의 실시예에 따른 체적 음향 공진기는, 기판, 상기 기판 상에 제1 전극, 압전층, 제2 전극이 순차적으로 적층되는 공진부, 및 상기 압전층의 상부나 하부에 배치되는 온도 보상층을 포함하며, 상기 온도 보상층은 상기 압전층과 반대되는 부호의 열팽창계수를 가지며, 상기 온도 보상층과 상기 압전층의 두께와 관련하여 다음의 식1을 만족할 수 있다. (식1) 0.25 < 온도 보상층의 두께/압전층의 두께 < 0.33

AIR-GAP TYPE Film Bulk Acoustic Resonator

본 발명에 따른 에어갭형 FBAR(Film Bulk Acoustic Resonator)는 상면에 기판 캐비티(cavity)가 형성된 에어갭부을 포함하는 기판; 상기 에어갭부를 에워싸며 상기 기판의 상부에 형성된 하부 전극; 상기 하부 전극의 상부에 형성된 압전층; 및 상기 에어갭부의 수직 투영에 따른 가상 영역에 대응하여 상기 압전층의 상부에 형성된 상부 전극을 포함하고, 상기 압전층은, 상기 하부전극과 상기 상부전극 사이에 압전 캐비티가 형성된 공동부를 포함하되, 상기 공동부는 상기 상부전극의 끝부분에 해당하는 엣지부의 하부에 형성된 것을 특징으로 한다. An air gap type film bulk acoustic resonator (FBAR) according to the present invention includes: a substrate including an air gap portion having a substrate cavity formed on an upper surface thereof; a lower electrode surrounding the air gap and formed on the substrate; a piezoelectric layer formed on the lower electrode; and an upper electrode formed on the piezoelectric layer to correspond to a virtual region according to the vertical projection of the air gap portion, wherein the piezoelectric layer includes a cavity in which a piezoelectric cavity is formed between the lower electrode and the upper electrode, The cavity is characterized in that it is formed under the edge portion corresponding to the end of the upper electrode.

Thin film bulk wave acoustic resonator

【課題】 スプリアスの抑制が可能な薄膜バルク波音響共振器を提供する。 【解決手段】 第１の電極１２と、第１の電極１２上に設けられた圧電膜１４と、圧電膜１４を挟んで第１の電極１２と対向する第２の電極１８と、圧電膜１４を挟んで第１の電極１２と対向するように設けられ、少なくとも一組の平行でない対向する辺を有する付加膜１６とを備える。 【選択図】図１

Bluk acoustic wave resonator

본 발명의 일 실시예는 벌크 탄성파 공진기에 관한 것으로서, 압전성 물질(piezoelectric)을 포함하는 압전층; 압전층의 일면에 배치되는 제1전극; 압전층의 일면의 반대면인 타면에 배치되는 제2전극; 및 압전층의 일면에 배치되고 제1전극을 포위하는 프레임; 을 포함하고, 프레임과 제2전극의 사이에 발생되는 기생 캐패시턴스를 줄임으로써, QF(Quality Factor) 또는 kt2(electro-mechanical coupling coefficient)값을 높일 수 있다. An embodiment of the present invention relates to a bulk acoustic wave resonator, comprising: a piezoelectric layer including a piezoelectric material; A first electrode disposed on one surface of the piezoelectric layer; A second electrode disposed on the other surface opposite to the one surface of the piezoelectric layer; And a frame disposed on one side of the piezoelectric layer and surrounding the first electrode; And the QF (quality factor) or kt2 (electro-mechanical coupling coefficient) value can be increased by reducing the parasitic capacitance generated between the frame and the second electrode.