CAP SUBSTRATE, STRUCTURE, AND MANUFACTURING METHOD THEREOF
The present invention refers to cap substrate, structure and sequence of manufacturing method relates to, and sintered results which bear comparison with, reliable substrate level hermetic packaging (wafer-level hermetic packaging) eutectic Au-Si it is one of techniques for joining bump structure of substrate, manufacturing method of and structures, capable of improving durability of the as, a prior art bump structure Ni/Au/cu in the case of moisture at the faying surface the eutectic Au-Si layered or MDC group are found and reduced in brittleness, removes additional copper is present, thereby reducing the test process time have reliability part of due with moisture (void) sealably coupled to a reliable in the form is a problem which, in addition a prior art Au bump structure between and a cap substrate fine of proper interval control is possible, further, must comprise a cavity a catalyst layer forming step of forming the liquid crystal panels but, the present invention refers to these problems the vicinity of the substrate is input cap for the, , capable of improving durability of the relates to manufacturing method and structures. Recent, future mobile and automotive applications MEMS (Micro Electro Mechanical Systems) technique the center of which lies on the various addresses the technical field by users size system innovative the market in two. has been more and more enlarged. MEMS semiconductor technique is MEMS to various techniques of only of the special embodiment of silicon technologies in system with predetermined micro or nano metric a shape integrated on a substrate such as a silicon substrate 2000 formed. MEMS device made by using techniques most of the external environment formed through frame motion, temperature, humidity, fine dust, vibration and time, such as a shock being sensitive to their responsive to external environment, by is does not perform of the operation or during operation error (error) is disappeared video information at a. Therefore, MEMS elements is located a board part of the sensor substrate mounted sealing by by forming a package MEMS, MEMS element from exterior environments (wafer-level hermetic packaging) hermetic packaging level substrate masking. is required. Is a substrate such as a level hermetic packaging method is but a variety of (wafer-level hermetic packaging), Au-Si handling a data storage apparatus in the present invention a variety of of the invention are following fusion bonding unit is off. First, fine substrate (layer) layer for joining further fine as there is no algorithm to carry out location compensation it the n-type semiconductor layer of substrate penetration hole while moving up and down. Second, variety of substrate enables the use of since characteristics are improved and sealed vacuum package requiring a gyro sensor, which. applied but are not limited. Third, fine substrate and a cap substrate is electrically connected through the substrate cap since linear power amplifier is group represented by the formula 1.. Time, signal processing device for integrating a future cap wafer manufacturing cost and package a large size when m number of third. Active energy of the reactive, fine intervals between stocks substrate and a cap substrate the gap sensing evaluation factors levels can be regulated as a low advantages large. For fusion bonding Au-Si the texture of the substrate from being a cap various but for forming bump structure stabilized compatibilized to existing device and techniques applied to good merchandising is tried to benefits. A bump structure compatibilized generally bump and Au bump Ni/Au/cu.. First, bump technique Ni/Au/cu surfaces of a silicon film is combined bump Ni/Au/cu a cap substrate on junction eutectic Au-Si result, moisture, most of the blow-by bonding effected using the reliability evaluation (HAST (High Accelerated Stress Test), PCT (Pressure Cooker Test)) when going on the performance of MEMS device generating positive/non-hard mask as an ion implantation mask at rear direction in. To this end and made of a material which replace component cu for forming bump standard semiconductor according to the value must may use vapor substrate. Ni-Si compounds are formed during bonding in addition is that attenuate the projection jaw partially sealed by the bonding to stabilize the special management and the fine intervals between stocks substrate and a cap substrate the gap sensing evaluation factors to a level at which it is the auto gain adjustment was difficult to control. While, Au bump bump structure separated from the fine substrate and a cap between the proper for maintaining spacing should is additional forming cavity (cavity). Cavity forming process is not standard processing semiconductor existing generate and distribute plasma all of and manufacturing costs rise, various been along generation of process problems. The present invention refers to the above-mentioned at least one of the upper and prop, the present invention refers to a catalyst layer forming step of forming cavity that do not require additionally Au bump cap with substrate, , capable of improving durability of the, manufacturing method and structures in provides. And sintered results which bear comparison with, the present invention refers to, a prior art bump structure Ni/Au/cu in the case of moisture at the faying surface the eutectic Au-Si layered or MDC group are found and reduced in brittleness, removes additional copper is present, thereby reducing the test process time have reliability part of due with moisture (void) sealably coupled to a reliable in the form is a problem which, in addition a prior art Au bump structure between and a cap substrate fine of proper interval control is possible, further, must comprise a cavity a catalyst layer forming step of forming the liquid crystal panels but, the present invention refers to these problems the vicinity of the substrate is input cap for the, , capable of improving durability of the manufacturing method and structures in provides. For achieving the aim of said: an cap substrate of the present invention number 1 embodiment, fine structured substrate that is used for sealing mounting cap layer as a mask, is formed on the substrate including the cap, said fine structured substrate is coupled with a portion of, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and said cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; includes. Wherein, the support layer reaction bonding said, said bump with Si eutectic melting points and higher (eutectic temperature) eutectic temperature has and rightward. Furthermore, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or Al/Ge film is made by any one or more, .may be made single-or multi-layer. While, : an structure of the present invention number 2 embodiment, microstructures on a surface structured substrate formed is; and said fine structured substrate is formed over faces respectively opposite to the front, is coupled with a portion of said fine structured substrate, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and a cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap substrate be at 500. Furthermore, fine said substrates is facing the structured substrate with a portion of said cap and electrically connecting said bump may further include any seed layer. Wherein, the support layer reaction bonding said, said bump with Si eutectic melting points and higher (eutectic temperature) eutectic temperature has and rightward. Furthermore, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or Al/Ge film is made by any one or more, .may be made single-or multi-layer. Furthermore, said fine structured substrate (wafer-level hermetic packaging) hermetic packaging level a substrate made of a devices is desired. On the other hand, the manufacturing method of the present invention number 3 embodiment: an structure, microstructures on a surface is formed microstructures substrate to bond the upper substrate; said fine structured substrate is formed over faces respectively opposite to the front, is coupled with a portion of said fine structured substrate, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and a cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap substrate to bond the upper substrate; and said eutectic reaction bump said using said fine structured substrate and bonding the substrate cap; includes. On the other hand, the manufacturing method of the present invention number 4 embodiment: an structure, microstructures on a surface is formed microstructures substrate to bond the upper substrate; sealing said fine structured substrate for mounting the, cap an microstructures said bondable to a substrate to form a support layer reaction; said fine structured substrate and eutectic bonded microstructure said bump with an cap an step; and said bump and said electrode by once process eutectic substrate microstructure; includes. Wherein, said eutectic electrode by once process a, said fine structured substrate for for displaying standard disital video signal bump said and is exhausted to a prescribed pressure and temperature under elevated pressure by using a includes and heating. Furthermore, prior to said for forming bump, a substrate on which a silicon-structured substrate fine said material layer and a nitration material layer may further include any. Furthermore, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or Al/Ge film is made by any one or more, .may be made single-or multi-layer. Furthermore, the support layer reaction bonding said, said fine eutectic structured substrate has and rightward eutectic melting points and above, said junction of the dry CA with a seed 2 single or good force as at least one layer of plating, Ni, Ti, Cr, V, Al, cu, Pd selected from the group consisting of one or more can be made of. Furthermore, the support layer reaction bonding said, said bump is formed on the lower than, the eutectic bump said fine structured substrate of controlling the reaction after engagement with said fine structured substrate and said gap between said cap substrate to spaced each other with a certain distance. The present invention according to cap substrate, according to structure and sequence of manufacturing method, First, conventional semiconductor equipment and techniques. utilizes a a speed of n times. I.e., set up a for compatibilized semiconductor existing device and techniques current from a power the long wave length line, in which a bump is fabricated Au substrate structure and the micro-fine substrate cap Au-Si eutectic junction (eutectic bonding) results, 8 inch wafer and are separated from formed by bonding problem. Through simplified process steps, bonding control easy, reducing consumption Au, vacuum sealing (Vacuum sealing), such as on the upper and/or lower the wafer, lower cell interval adjustment easy can cause many benefits. Second, sensor chip or semiconductor chips and the like type of the microstructures such as fine couples to and seals a substrate on a substrate of each wheel of a vehicle mount the video blur detecting function, cavity without Au bumps bonding vacuum sealing in the compression. from undergoing. Third, prior art problem is solved in which all problems of on. I.e., a prior art bump structure Ni/Au/cu in the case of moisture at the faying surface the eutectic Au-Si layered or MDC group are found and reduced in brittleness, removes additional copper is present, thereby reducing the test process time have reliability part of due with moisture (void) sealably coupled to a reliable in the form is a problem which, in addition a prior art Au bump structure between and a cap substrate fine of proper interval control is possible, further, must comprise a cavity a catalyst layer forming step of forming the liquid crystal panels but, the present invention refers to these problems the vicinity of the. solving a. Figure 1 shows a existing of Ni/Au/cu immediately prior mounting sealed, using bumps fine structured substrate (12) and a cap substrate (11) is shown that a cross-section structure, Also also Figure 2 shows a 1 shown in the time normally junction eutectic structures with, fine structured substrate (12) and a cap substrate (11) cross-section of a cross-section it is shown a state, Figure 3 shows a 2 also also reliability evaluation structure shown in (HAST (High Accelerated Stress Test)) on a fine structured substrate (12) and a cap substrate (11). in a section it is shown a cross-section of state. Figure 4 shows a of Figure 3 structured substrate fine structure (12) and a cap substrate (11) after the separation of the knife into of photographs on, Figure 5 shows a cu/Ni/Au bump structure of clamp is arranged in order to improve problem and reliability Au bump (21) microstructure using the substrate (12) and a cap substrate (11) shown in the cross-section of state cross-sectional drawing of Figure 1, Also also 5 shown in Figure 6 shows a eutectic Au-Si structures with fine structured substrate after junction (12) and a cap substrate (11) cross-section of a cross-section it is shown a state, Also in Figure 6 Figure 7 shows a solid towards the eutectic generating (17) because of having defect and improve a characteristic of a mobile micrometers or greater in order to improve the clamping circuit performs the clamping when, bonding reaction support layer (22) using fine substrate the present invention according to (12) and a cap substrate (11) cross-section of a cross-section it is shown a state, Figure 8 shows a 7 also also a structure shown in the time normally junction eutectic Au-Si, fine structured substrate (12) and a cap substrate (11). in a section it is shown a cross-section of state. Hereinafter reference to the drawing with an the present invention according to a preferred embodiment as further described to the thereby, the cold air flows. Prior to is, the present specification and claim range terms or word or a pre-in the conventional limitation of the is of subsequent analysis is not, its own invention in the invention most best method in to describe the term of a well as a braking system suitable for general outline can be defined to the follower principle, semantics and to meet the technical idea of the present invention the layout based upon the resistance value must be a general outline. Therefore, the present specification is shown in configuration is a drawing examples of the embodiment of the present invention the most preferred one embodiment to a modem aspect and only the a both technical idea of the present invention and since it is not, the present application part of an replace produces various modified examples are as equal as possible to be must understanding. In hereinafter, the present applicant is the present invention problems so that every member can appreciate it germanium to consciousness and discussed, to illustrate the respect to time as large as that of the present invention. 5 also to 1 also refers to the prior art to the problem of through evaluates, the present invention problems so that every member can appreciate it. longitude subconsciousness for improving education effect. Next also 6 and 7 reference to. also disclosed to the present invention. Figure 1 shows a existing of Ni/Au/cu immediately prior mounting sealed, using bumps, fine structured substrate (12) and a cap substrate (11) whose cross section is shown that structure.. As shown in 1 also, structured substrate with minute structure (12) is located a. Fine structured substrate (12) the manufacturing method and space for the silicon (Si) or SOI (Si on Insulator) consists of wafer in order. Fine structured substrate (12) upper part of the cap substrate (11) is located next to, fine structured substrate (12) on top of cap substrate (11) as the lid is mounted sealed capped. Wherein, fine structured substrate a substrate level hermetic packaging (wafer-level hermetic packaging) is desired and a surface of the a substrate comprised of devices, MEMS elements is located can be a sensor such as a substrate. Cap substrate (11) an input and output wiring process of the Si single crystal ingot previously the processing may be proposed. Bump is bonded to the cu, anhydrous gypsum and a superplasticizer seeds, cu (14), Ni (15), Au (16) the mounting device by coating a order, Au (16) and the micro-fine structured substrate surface of (13) Au-Si between eutectic the substrate level hermetic packaging (wafer-level hermetic packaging) and (fine structured substrate (12) and a cap substrate (11)) for electrically for connecting them make. Also also Figure 2 shows a 1 shown in the time normally junction eutectic structures with, fine structured substrate (12) and a cap substrate (11). in a section it is shown a cross-section of state. Firstly a eutectic junction process, Au layer (16) and the micro-fine structured substrate surface of (13) in step layer is generation and eutectic reaction; second, eutectic is formed by liquid phase surface of fine structured substrate (13) and Ni (15) along a side bump, cu (14) detects over-currents flowing to step; third, eutectic is formed by liquid phase and is diffused cu part of compounds of Si and Ni (30) is formed combustion system therein having the step of; time, solid eutectic is formed by liquid phase (17) cu material phase transformation closes the discharge port (18) the occurrence of minute structured substrate surface (13) and eutectic solid (17) interface formed on. can be grouped into a fired combustion system therein having the step. Figure 3 shows a 2 also also reliability evaluation structure shown in (HAST (High Accelerated Stress Test)) on a fine structured substrate (12) and a cap substrate (11). in a section it is shown a cross-section of state. Also 3 reliability evaluation structure shown in (HAST (High Accelerated Stress Test)) by performing a photo lithography process results, fine structured substrate surface (13) and eutectic solid (17) formed on interface cu material (18) moisture of oxidisable by structured substrate by to and removed from the surface (13) and eutectic solid (17) in the binding strength for a is plate so that a. In addition cu material (18) is eliminated through space moisture is microscopic to penetrate and the connectors are located at the internal load in accordance with the blower performance of microstructured MEMS-up elements and the like on the generating positive/non-hard mask as an ion implantation mask at rear direction in. In addition impact electrical connection constitution rotation force. Figure 4 shows a of Figure 3 structured substrate fine structure (12) and a cap substrate (11) after the separation of the knife into a is photographs on. Also as shown in 4, Ni (15) and a Ni and a Si compounds of (30) at the boundary in which a large region tool having a function of adjusting the developing one body bonding conditions according to Ni (15) and a Ni and a Si compounds of (30) serves to prevent a separation and boundary portions bonding force can be changed. This phenomenon is future mass production status in real time the decrease in yield and reliability may adversely affect the.. Figure 5 shows a cu/Ni/Au bump structure of clamp is arranged in order to improve problem and reliability Au bump (21) microstructure using the substrate (12) and a cap substrate (11) is shown in the cross-section of state cross-sectional drawing of Figure 1. Au bump structure and made of a single-layer or multiple layers, and can be. Also also 5 shown in Figure 6 shows a eutectic Au-Si structures with fine structured substrate after junction (12) and a cap substrate (11). in a section it is shown a cross-section of state. Ni (15) shown in Figure 4 compounds of Si and a Ni and a (30) that occur at the boundary portions bonding force reduced the microstructures without substrate (12) the separator is arranged on the surface of bonding force strong enough to been found. In addition in Figure 3, such as reliability issue is determining to be improving. However, fine structured substrate (12) and a cap substrate (11) intervals between stocks solid eutectic due to simply the control (17) because of having short electrical mobile micrometers or greater problem has reared up for generating a. As such, a prior art bump structure Ni/Au/cu in the case of moisture at the faying surface the eutectic Au-Si layered or MDC group are found and reduced in brittleness, copper is a void (void) reliable in the form is a problem which, in addition a prior art Au bump structure between and a cap substrate fine of proper interval control is possible, , must comprise a further a catalyst layer forming step of forming cavity at rear direction. The present applicant prior art the solid formulation as well as to reduce NOx generated in a high load while recognizing, the select filter also 7 and 8 support layer reaction bonding as shown in (22) by adding the vicinity of the, thereby satisfying various problem is solved. Also in Figure 6 Figure 7 shows a solid towards the eutectic generating (17) because of having defect and improve a characteristic of a mobile micrometers or greater in order to improve the clamping circuit performs the clamping when, bonding reaction support layer (22) using fine substrate the present invention according to (12) and a cap substrate (11). in a section it is shown a cross-section of state. Fine structured substrate (12) on the surface structure is formed as a substrate, is formed on Si or Ge is generally. Cap substrate (11) are composed of microstructures substrate (12) for sealing mounting as a substrate is used to, cap substrate (11) is formed on, fine structured substrate (12) is coupled with a portion of, said fine structured substrate (12) for sealing mount the video blur detecting function Au bump (21) and, Au bump (21) is formed on the lower than, Au bump (21) eutectic (eutectic) fine structured substrate of controlling the reaction (12) after engagement with fine structured substrate (12) and a cap substrate (11) spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent 8 880000238888 (22) includes. Bump for the sake of convenience described herein for (21) a Au bump (21) on the to described, bump is bonded to the Au, Au/Si, Au/Ge, Al/Si, or Al/Ge film is made by any one or more, .may be made single-or multi-layer. Wherein, fine structured substrate (12) (wafer-level hermetic packaging) hermetic packaging level a substrate made of a devices is desired. Furthermore, fine structured substrate (12) of bonding layer surface Ge or Si, Au/Si, Au/Ge, such as Al/Ge comprising the any one or more the group consisting of may have. Furthermore, fine structured substrate (12) facing the cap substrate (11) portion of a face of the Au bump (21) and electrically connecting may further include any seed layer. Wherein, bonding reaction support layer (22) the Au bump (21) of a thickness of less than, and is formed as elastic characterized by, Au bump (21) (eutectic temperature) eutectic temperature Au-Si of which has a high melting point and than, single-or multi-layer can be formed. The specific, may the wafers by applying pressure and heat, bonding reaction support layer (22) melting point of Au bump (21) of Au-Si eutectic temperature (eutectic temperature) than in has a high melting point and, eutectic solid (17) the bonding reaction support layer (22) thickness of can be is interval control by. Furthermore, bonding reaction support layer (22) and Au bump (21) the plating process, wherein portions of a but by using the mixture, Evaporator, Sputter method such as evaporation such as constitution :.. Furthermore, the surface of the bump Au, Au, Au/Si, consists for more than either Au/Ge or it is preferable that the. Figure 8 shows a 7 also also a structure shown in the time normally junction eutectic Au-Si, fine structured substrate (12) and a cap substrate (11). in a section it is shown a cross-section of state. Au bump (21) a plane which liquid phase eutectic reaction also bonding reaction support layer (22) the occurrence of minute structured substrate (12) and a cap substrate (11) suitable lengths between the torsion bar is used for can be present. In hereinafter, the present invention according to. also disclosed to manufacturing method structure. The present invention according to structure the manufacturing method, first, surface microstructures on a is formed microstructures substrate to bond the upper substrate; said fine structured substrate is formed over faces respectively opposite to the front, is coupled with a portion of said fine structured substrate, said fine structured substrate for sealing mount the video blur detecting function Au bump; and said Au bump is formed on the lower than, said Au bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and a cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap substrate to bond the upper substrate; and using said Au eutectic reaction bump said fine structured substrate and bonding the substrate said cap; includes. While, another structure the present invention according to the manufacturing method, microstructures on a surface is formed microstructures substrate to bond the upper substrate; sealing said fine structured substrate of substrate cap for mounting said fine structured substrate, forming a seed layer on the opposite surface; on said seed layer, to form a support layer reaction bonding; said fine structured substrate which are bonded eutectic and Au for forming bump step; the exterior to said Au in which a bump is fabricated removing seed layer region; and said Au bump and said electrode by once process eutectic substrate microstructure; includes. Wherein, said eutectic electrode by once process a, said Au bump for displaying standard disital video signal said fine structured substrate and is exhausted to a prescribed pressure and temperature for heating and under elevated pressure by using a it is preferred that a including. Furthermore, prior to for forming bump said Au, a substrate on which a silicon-structured substrate fine said material layer and a nitration material layer may further include any. Furthermore, said Au bump is bonded to the Au, Au/Si, consists for more than either Au/Ge or it is preferable that the. Furthermore, the support layer reaction bonding said, said fine eutectic structured substrate has and rightward eutectic melting points and above, said junction of the dry CA with a seed 2 single or good force as at least one layer of plating, Ni, Ti, Cr, V, Al, cu, Pd selected from the group consisting of one or more preferably is formed on. Furthermore, the support layer reaction bonding said, said Au bump is formed on the lower than, said Au bump eutectic of controlling the reaction after engagement with the fine structured substrate fine structured substrate and said gap between said cap substrate to spaced each other with a certain distance. The resulting structured materials, , defined although the present invention refers to drawing but is described by examples of the embodiment, the present invention refers to this do not defined by the present invention is in the field of the person with skill in the art in techniques of the present invention by charging policy to be substrate below the event range equalized signal within the range correction and changeable. surround. 11.. cap substrate 12.. fine structured substrate 21.. Au bump 22.. bonding reaction support layer According to the present invention, a cap substrate is used for sealing a substrate with a fine structure. The present invention provides the cap substrate includes a bump which is formed on the cap substrate, is combined with a part of the substrate with the fine structure, and seals the substrate with the fine structure, and a bonding reaction support layer which is thinner than the bump and constantly maintains an interval between the cap substrate and the substrate with the fine structure after the substrate with the fine structure is combined with the bonding reaction support layer by controlling the eutectic reaction of the bump. Further, the present invention provides a structure using the cap substrate and a manufacturing method thereof. COPYRIGHT KIPO 2016 Fine structured substrate that is used for sealing mounting cap layer as a mask, is formed on the substrate including the cap, said fine structured substrate is coupled with a portion of, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and said cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap substrate. According to Claim 1, the support layer reaction bonding said, said bump Si eutectic melting points and higher (eutectic temperature) eutectic temperature with having and rightward, cap substrate. According to Claim 1, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or film is made by any one or more Al/Ge, single-or multi-layer a, cap substrate. Microstructures on a surface structured substrate formed is; and said fine structured substrate is formed over faces respectively opposite to the front, is coupled with a portion of said fine structured substrate, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and a cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap the, structure. According to Claim 4, facing the structured substrate fine said substrates is with a portion of said cap and electrically connecting bump said seed layer including, structure. According to Claim 4, the support layer reaction bonding said, said bump Si eutectic melting points and higher (eutectic temperature) eutectic temperature with having and rightward, structure. According to Claim 4, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or film is made by any one or more Al/Ge, single-or multi-layer a, structure. According to Claim 4, said fine structured substrate (wafer-level hermetic packaging) hermetic packaging level a substrate made of devices is desired, structure Surface microstructures on a is formed microstructures substrate to bond the upper substrate; said fine structured substrate is formed over faces respectively opposite to the front, is coupled with a portion of said fine structured substrate, said fine structured substrate for sealing an interval between the bumps of mounting; and said bump is formed on the lower than, said bump eutectic (eutectic) the fine structured substrate of controlling the reaction after engagement with said fine structured substrate and a cap substrate spaced each other with a certain distance of the spacing between a support layer reaction bonding is to such an extent; including a, cap substrate to bond the upper substrate; and said eutectic reaction bump said fine structured substrate using bonding the substrate cap said and; including a, structure manufacturing method. Surface microstructures on a is formed microstructures substrate to bond the upper substrate; sealing said fine structured substrate for mounting the, cap an microstructures said bondable to a substrate to form a support layer reaction; said fine structured substrate and eutectic bonded microstructure said bump with an cap an step; and said bump and said electrode by once process eutectic substrate microstructure; including a, structure manufacturing method. According to Claim 10, a eutectic said electrode by once process, for displaying standard disital video signal bump said and said fine structured substrate is exhausted to a prescribed pressure and temperature for heating and under elevated pressure by using a including, structure manufacturing method. According to Claim 10, prior to said for forming bump, on said fine structured substrate further silicon layer is formed, including, structure manufacturing method. According to Claim 10, said bump is bonded to the, Au, Au/Si, Au/Ge, Al/Si, or film is made by any one or more Al/Ge, single-or multi-layer a, structure manufacturing method. According to Claim 10, the support layer reaction bonding said, said fine eutectic structured substrate has and rightward eutectic melting points and above, said junction of the dry CA with a seed 2 single or good force as at least one layer of plating, Ni, Ti, Cr, V, Al, cu, Pd selected from the group consisting of consisting of at least one material, structure manufacturing method. According to Claim 10, said bonding reaction the support layer, is formed on the lower than said bump, said bump eutectic of controlling the reaction the fine structured substrate after engagement with said fine structured substrate and said cap spaced each other with a certain distance of the spacing between a substrate is to such an extent, structure manufacturing method.
