RETAINER RING IN CARRIER HEAD FOR CHEMICAL MECHANICAL POLISHING APPARATUS AND CARRIER HEAD HAVING RETAINER RING
The present invention refers to chemical mechanical polishing device relates to retainer ring of carrier head of, mechanical polishing process to perform exactly that press the pad polishing liquid during of the polishing pad by retainer ring, by means of transformation to a filtered of a wafer is mounted on a groove on the not of chemical mechanical polishing device relates to membrane carrier head. Chemical mechanical polishing (CMP) device masking in the process for producing semiconductor device, etching and wiring process, or the like produced during bonding of the perform a due made uneven of surfaces of the wafer less power dissipation, fresh removing the difference between the height sleCT a wide area and planarization of, circuit formation contact/wiring membrane separation and of test facilitating wafer according to the placed with irregular space to compensate the surface roughness and to improve the, precision finishing surface of a wafer device is used. In CMP device such, a carrier head before and after polishing process which are opposed to the and the polishing pad polishing surface wafer regardless of the state of the wafer by pressing the and to make such direction as to perform polishing process, the edge to the completion of the step of simultaneously polishing direct and indirect vacuum adsorption tool on grasped and then is moved to a process. Figure 1 shows a also carrier head (1) is multiplex. Also as shown in 1, carrier head (1) consists of a body (110) and a, body (110) that rotates with a base (120) and a, base (120) whereby the ring shaped surrounding the mounted in the base (120) that rotates with a retainer ring (130) and, base (120) is fixed to base (120) with space [...] wall of a pressure chamber (C1, C2, C3, C4, C5) forming a membrane made of elastic material (140) and, pneumatic supply passages (155) through the pressure chamber (C1, C2, C3, C4, C5) gathers the materials search encases or air to and from a pressure control (150) consists of to. Membrane made of elastic material (140) the wafer (W) that press the flat bottom plate (141) next to an end of a side edge of (142) is the outside. Membrane (140) end central portion of (140a) the base (120) for direct suction of wafer (W) is fixed to a suction ball (77) is formed. Membrane (150) the central part of the discharge characteristic (W) that press the wafer are not formed may be defined by the. Membrane (140) laterally in relation to center of (142) between the base (120) fixed to partition a ring (143) multiple, partition (143) based on the plurality of pressure chamber (C1, C2, C3, C4, C5) is is arranged in concentric. The, chemical mechanical rate of polishing during a polishing process pressure control part (150) applied from a pneumatically the pressure chamber (C1, C2, C3, C4, C5) while portion being inflatable, membrane bottom plate (141) (W) to perform massaging easily pressurized the upper surfaces of the wafers, respectively. Simultaneously, body (110) and base (120) that rotates with a retainer ring (130) of the bottom section of the elastic (130s) of polishing pad (11) while being applied with a pressure, a the drive unit drives and rotates the, retainer ring (130) a wafer (W) is surrounded by carrier head (1) out of inhibit to one surface of the substrate. At this time, wafer process surface (W) an pad (11) comprises a metal the polishing plate (11c) on the hard pad (11b) and a soft pad (11c) is formed having insulation film of ono structure. And, soft pad (11c) a chemical mechanical polishing process which wear signal according to progress of the, also 2a which are disposed in the form shown in retainer ring (130) is (y1) and moved down, the polishing pad (11) pressed surface, as shown in also 2b, retainer ring (130) that is pressed by polishing pad (11) soft pad (11c) communicates with the ambient convex become projection (11x) and formed in the form of. State of the SP heads and, retainer ring (130) the wafer (W) (W) of card wafer space and a first container so that gas a a stay a, retainer ring (130) inner periphery of the periphery of the workpiece (W) are located in close proximity since wafer surface, retainer ring (130) to impression polishing pad (11s) to the peripheral of projections (11x) while forming at, wafer (W) is pressed against the polishing pad edge of (11) in close contact with the surface of the first transfer unit transfers input data which results in the formation. The, wafer (W) at the edge of the guide projection is formed in the upper chemical mechanical polishing process to be capable of not. The present invention refers to the described technique background is connected or disconnected in order to under, the present invention refers to chemical mechanical polishing controlled to accurately around the edge of a chemical mechanical polishing device can be pressed of carrier head, intended reduction. Among other things, the present invention refers to chemical mechanical polishing process that press the pad polishing liquid during of the polishing pad by retainer ring, by means of transformation to a filtered is mounted on a wafer of a transistors are connected with the not, wrinkling of the polishing pad at edge portions of the wafer by suppressing the production of, wafer uniform relative to the edge of in polishing is performed. Said end of the, the present invention refers to, chemical mechanical polishing controlled as retainer ring of a carrier head pressurized, said retainer ring the wafer is configured in the shape of a a ring wrapped around the, polishing pad are ring-shaped the bottom surface to characterized by retainer ring of carrier head for chemical mechanical polishing device provides. As such, retainer of ring-shaped groove by temperature and the desired temperature by, chemical mechanical rate of polishing during a polishing process that is pressed by retainer ring is pushed a polishing pad is radial inner retainer ring is a protruded from the stopper's inner or radial pushed onto the outside (or filtered) amount some or all of the retainer ring by, is introduced into internal second and third tungsten layers are anisotropically, project outboard of retainer ring to the sides of the accessory of the polishing pad disclosed in the present invention minimize the, retainer ring pressure polishing pad projecting the retainer by for wafer edge to an inner side of the rotation ring to a pressurizing force mounted and which are which can be may yield an a beneficial effect. At this time, said second and third tungsten layers are anisotropically 1/3 width of a bottom surface of a retainer ring said width is preferably not less or more. 1/3 and third tungsten layers are anisotropically etched width smaller than the normal value a polishing pad is pressed retainer ring [...] receiving amount is are converted limit the. Just, 5/6 width of a bottom surface of a retainer ring and third tungsten layers are anisotropically etched width does not exceed for locally the polishing pad so as to press the form a water tank a preferably in. And, said retainer ring said groove the radial inner of a bottom surface of a preferably located at about the same. The, retainer ring the polishing pad by pressing the projecting polishing pad the protruded part of the rear door and received by the interruption, radial inner retainer ring projecting toward the polishing pad is disclosed in the present invention minimize the amount, edge portion of wafer by projecting a polishing pad polishing process is used for detouring m number of third. Furthermore, boundary that stores said second and third tungsten layers are anisotropically radial inner direction and extends upwardly, depending on the use to which the long term retainer ring and even with wear on the retainer ring where the boundary between the radial inner direction always at an upper portion, a polishing pad near wafer edge projecting configuration and a is and has a constant amount of the so that, a homogeneous life retainer ring be able to maintain the quality of polishing.. On the other hand, said bottom retainer ring radially is formed in an inner groove multiple along the circumferential direction, is pressed against the polishing pad membrane slurry supplied to a wafer to enter the. entering the. While, the present invention refers to, body and; said a base and driven in rotation with one single base body; said fixed orientation constrained, wall of a pressure chamber between said database is formed chemically by said pressure chamber for pressure control in a wafer bottom during mechanical polishing process pushes the with a membrane that; said chemical mechanical rate of polishing during a polishing process of an surface and contact pads, said wrapped around the of the membrane the aforementioned configuration retainer ring; characterized by includes is composed of chemical mechanical polishing device provides for carrier head. According to the present invention, retainer of ring-shaped groove by temperature and the desired temperature by, chemical mechanical rate of polishing during a polishing process that is pressed by retainer ring a polishing pad is radial inner retainer ring or radial is protrudes upwardly into the type is pushed onto the outside, instead of being, protruded from the stopper's inner, is pressed in millimeter of the polishing pad to the sides of the accessory retainer ring some or all of and third tungsten layers are anisotropically etched into is configured to receive a, wrinkling of the polishing pad at edge portions of the wafer by suppressing the production of, wafer relative to the edge of polishing can be stably carried out, may yield an a beneficial effect. The, the present invention refers to, chemical mechanical polishing process that press the pad polishing liquid during retainer ring by polishing pad radial inner retainer ring for a strain-released the with the low pressure chamber, is mounted on a of a wafer not a the insertion groove may yield an a beneficial effect. On the other hand, heat 2 groove said at least of said retainer may be shaped in the form of ring. As such, heat 2 and third tungsten layers are anisotropically etched a conductive pattern is formed in the interlayer dielectric that they can be remained on an between a contact the polishing pad the first and second, one second and third tungsten layers are anisotropically when excessively large width, and third tungsten layers are anisotropically etched under the urging force of the plate retainer ring inside and outside the contact side while end will bend when encountering eliminating the possibility that can be modified can be. At this time, a width each other said 2 different groove or more heat might include those. I.e., width and third tungsten layers are anisotropically etched of heat 2 (radial direction length) are different from each other and may be formed, the interruption of either of recesses heat 3 2 another compared and third tungsten layers are anisotropically etched width can be formed into a and b regions.. Even in this case, said 2 heat or more recesses most radius located inside a make a high capacitance by having the largest interior width and third tungsten layers are anisotropically etched, by pressing the retainer ring the polishing pad a pleated generated has a value of a range of to be received in the interruption of the majority of the, radial inner retainer ring a wafer edge keep the impact by a polishing pad of pleats is for minimizing the preferably. Furthermore, the present invention refers to, where the boundary between the radial inner and third tungsten layers are anisotropically etched retainer ring a motion in the vertical direction and extends upwardly to be minimal by forming the, depending on the use to which the long term retainer ring and even with wear on the retainer ring where the boundary between the radial inner direction always at an upper portion, a polishing pad near wafer edge projecting configuration and a is and has a constant amount of the so that, polishing a homogeneous life retainer ring be able to maintain the quality of the information obtained by the state measuring. anti-section shown in the carrier head of the existing method also Figure 1 shows a, 2a also the retainer ring by polishing pad is pressurized to previous state of a magnification of the portion of Figure 1 shown in the 'A' also, The retainer ring also 2b polishing pad is pressurized by a shows the state that the 'A' also of a magnification of the portion of Figure 1, Figure 3 shows a one embodiment of the present invention also shown: an carrier head degradation perspective view, Figure 4 shows a carrier-optic head assembling of the state anti-section of Figure 3, 5a also the retainer ring by polishing pad is pressurized to previous state of a magnification of the portion of Figure 4 shown in the 'B' also, The retainer ring also 5b polishing pad is pressurized by a shows the state that the 'B' also of a magnification of the portion of Figure 4, Figure 6 shows a bottom view of Figure 3 of carrier head, Figure 7 shows a form according to other embodiment of the present invention also the form of retainer ring shown in the surface, Figure 8 shows a form of the present invention also form of retainer ring according to another embodiment it is shown a. plane from the. Hereinafter, one embodiment of the present invention device carrier head for chemical mechanical polishing according to (100) and a retainer ring (230, 230'). in parallel with the axis. Just, described thereby, the cold air flows in one embodiment of the present invention, publicly known configuration and the same, or similar, on the constitution identical or similar drawing to impart code therefore, the dispensed to a. One embodiment of the present invention: an carrier head (100) the, also 3 and 4 as shown in, of the existing method carrier head (1) similarly to the drive shaft (not shown) and connected for rotation and a a body (110) and a, body (110) is connected that rotates with base (120) and a, base (120) is fixed to base (120) between wall of a pressure chamber (... , C4, C5) formed on a resiliently flexible to form a membrane (140) and, pressure chamber (... , C4, C5) co-is supplied to an engine, a pressure control (150) and a, membrane (140) of wrapped around the pad polishing liquid during chemical mechanical polishing process (11) touch the retainer ring (230) and, body (110) that surrounds the control element cover (190) consists of to. I.e., the present invention refers to of the existing method carrier head (1) and membrane (140) the structure of a large difference. Said body (110) the drawing not shown combined upper a drive shaft and is for rotation. Body (110) has metal member but can be, as shown in 3 also of an outdoor unit body has a 2 (110a, 110b) have been bonded to one another may be the. Body (110) from outside the periphery of the one of the bottom chassis 2 to a cover array block, and by dividing 6 (191, 192) is by. Said base (120) consists of a body (110) coaxially with respect to the are arranged in such a manner and aligned on, is coupled connected to rotate with, body (110) .and rotates together with the polishing head. Said membrane (140) in anti-sectional degree the of Figure 4 as shown has structure. (The present invention according to membrane (140) the drawing shown in anti-sectional morality centerline rotates about the is shape.) i.e., membrane (140) the, polyurethane flexible membrane such as the bottom plate, and is formed as elastic material (141) and, bottom plate (141) bent from the edge of upper flexible stores the side (142) and, bottom plate (141) from the center of side (142) between base (120) coupled to a plurality of ring form partition (143) is comprised of, membrane (140) and the base (120) between the initial discharge (143) a plurality of chambers is segmented by the [...] chamber (... , C4, C5) to form a. Said retainer ring (230) the, chemical mechanical rate of polishing during a polishing process membrane bottom plate (141) (W) of a wafer positioned on the lower side of the a ring is configured in the shape of a wrapped around the, pad polishing liquid during chemical mechanical polishing process (11) turns the instrument (130s) in a polishing are pressed is a consumable member. Therefore, retainer ring (230) of an engineering plastic or resin or the like material is made from. Retainer ring (230) the body (110) connected in the body (110) according to the rotation of rotation together (230d) a. Retainer ring (230) are located above the a ring-shaped pressurized chamber (Cr) by the pressure in is of being driven upper-down movement. Specifically, retainer ring (230) integrally with a vertical movement and the lower member (91) and a, lower member (91) be positioned on the upper side of the lower member (91) into contact with the abutting first light for emitting second light including upper member (92) and a, lower member (91) and a upper member (92) of contact surface between a flexible wrapped around the installs: a (95) is formed (Cr) pressurized chamber by, pressure control (150) pressurized from chamber (Cr) according to the pressure supplied to lower member (91) and a upper member (92) while is, retainer ring (230) 888000023 6888 (11) the polishing pad surface of the pressing force controlled. Also 5a and 6 as shown in, retainer ring (230) of the bottom section of the elastic (230s) ring form along the circumferential direction the recess (235) is formed concave groove of a water. Thereby, chemical mechanical rate of polishing during a polishing process retainer ring (230) is downwardly press force acting downward movement while when (y1), retainer ring (230) of the bottom section of the elastic (230s) the polishing pad (11) soft pad (11a) formed on the resultant according to pushing the structure, soft pad (11a) the volume by the upper substrate in correspondence to the peripheral position and impression while flows, to approach a blistering upwardly is derive form. State of the SP heads and, according to the present invention, retainer ring (230) of the bottom section of the elastic (230s) the recess (235) is a supporting rib to be minimal by forming the upper, also chemical mechanical as shown in 5b rate of polishing during a polishing process retainer ring (230) of the bottom section of the elastic (230s) that is pressed by polishing pad (11) amount filtered and upwards the millimeter has some or all of the retainer ring (230) of recesses (235) is to one. Wherein, retainer ring (230) of recesses (235) (X2) width of a retaining ring (230) (Xr) of width of 1/3 is defined on at least, more preferably 1/2 to 3/4 by being as stipulated by length of, retainer ring (230) according to an the polishing pad (11) sufficiently to approach the flows [...] outputs a relay driving signal. receiving. As such, retainer ring (230) of recesses (235) sufficiently to significantly, polishing pad (11) to the sides of the accessory according to first (11x')of negative to approach can be retain a low height, polishing pad (11) according to first (xe) position to approach a retainer ring (230) a location near the can be controlled to. At this time, recess (235) allows a retaining ring (230) of radially outward end (3e) compared to radial inner end (3i) more offset. is preferably disposed. I.e., also represented by dimension xi of 5a xo represented by is formed smaller than dimension. As such, retainer ring (230) the [...] polishing pad (11) amount of outward radius compared to radial inner mainly, by deriving a, wafer (W) adjacent to the retainer ring (230) inside end (3i) so that less than rising quantity, in, wafer edge to rising quantity, chemically by mechanical polishing process of the polishing pad does not inlet port outputs a relay driving signal.. On the other hand, retainer ring (230) of recesses (235) with a top face and of (235c) allows a retaining ring (230) the wear worn away through life SPAN of thickness and polishing pad (11) of height negative to approach (y5) to the longer length than bottom by sum of (230s) is formed away from. Recess (235) with a top face and of (235c) a polishing pad (11) more by an amount sufficient to arch configured to receive a can be formed with the cross-section and, for facilitating of NC data as shown in the drawing can be formed with the and mounted to a planar face. On the other hand, retainer ring (230) of recesses (235) radial inner direction of boundary (235a) the into the vertically extending where the vertical surface is formed, retainer ring (230) polishing pad even with wear on the bottom of (11) projecting driving wheel by receiving the profile, retainer ring (230) (W) wafer regardless amount of polishing edge of. holding member. , By using a time hopping code, retainer ring (230) of recesses (235) boundary direction outer radius of (235b) has door 7 shown in other embodiment as shown in the example where the vertical surface into the vertically extending (235b')but can be formed with the, curved as shown in 5a also can be formed with the. The, retainer ring (230) of recesses (235) by a boundary surface, outer surface of the measurement pipe retainer ring (230) out of polishing pad (11) so as to shaped so as project, retainer ring (230) outer surface of the measurement pipe because less related the slurry and polishing of the wafer, or easy machining recess in the form and ensure the durability (235) is formed on outer surface of the measurement pipe interface. On the other hand, retainer ring (230) of the bottom section of the elastic radial direction component the home penetrating a has (233) is arranged in the circumferential direction along the, pad polishing liquid during chemical mechanical polishing process (11) slurry over represented by 30d is used in marking a wafer (W) until outputs a relay driving signal. introduced. While, as shown in 8 also, retainer ring (330) that is configured as ring bottom of recess (335i, 335o) the 2 heat may be thin film is removed. As such, recess (335i, 335o) is 2 heat type is formed in a semiconductor substrate, each column of recesses (335i, 335o) positioned between the access holes are filled with (336) is pressed against the polishing pad (11) since that is intended to contact the, one and third tungsten layers are anisotropically etched width (X2) when by the refrigerant cooling means is too large, retainer ring (330) under the urging force in downward of recess (335i, 335o) inside border and an outer to a boundary area between the flange warp deformation is with the low pressure chamber can be. At this time, said 2 heat or more recesses (335i, 335o) width (X3, X3')each other can be formed are different from each other. Preferably, 2 heat or more recesses (335i, 335o) most radius located inside a recess (335i) is greater than width of make a high capacitance by (X3), retainer ring (330) the polishing pad (11) by pressing the recess the inner most of the pleats generated (335i) is housed, retainer ring (330) for wafer edge located close on the inside of to, polishing pad (11) keep the impact by of pleats minimizes the known to have an, simultaneously contact (336) high by a pressurised force retainer ring (330) by polishing pad (11) is introduced even retainer ring (330) warp deformation of the contact parts of a constant without a contact condition purpose: an instrument for an endoscope. The present invention according to said groove, and at least one retainer ring of carrier head for chemical mechanical polishing device (230) the, bottom (230s) ring form of recesses (235) by temperature and the desired temperature by is, chemical mechanical rate of polishing during a polishing process retainer ring (230) that is pressed by polishing pad (11) is retainer ring (230) radial inner of the pushed onto the outside or radial is released, instead of being protrudes upwardly into form negative to approach, retainer ring (230) is pushed by hydraulic pressure projecting polishing pad (11) to the sides of the accessory of recess some or all of (235) according to accommodate into the interior of, at edge portions of the wafer polishing pad (11) of a light shielding film, which causes wrinkles by using negative to approach by minimizing the, wafer relative to the edge of polishing can be stably carried out, may yield an a beneficial effect. Preferred processes or more to the present invention is exemplified embodiment but described, the present invention refers to induced by such a specific are not limited only in the embodiment in the present invention the technical idea, specifically claim connected in an ineffective is modified in various forms, change, is may be or improved. W: wafer C1, C2, C3, C4, C5: pressure chamber 110: body 120: base 230, 330: retainer ring 235, 335i, 335o: recess 235a: inner boundary 235b: outer boundary 235c: with a top face and 140: membrane Cy: pressurized chamber The present invention relates to a retainer ring in a carrier head for a chemical mechanical polishing apparatus and a carrier head having the retainer ring. The retainer ring in a carrier head pressurizes a wafer during a chemical mechanical polishing process, the retainer ring is formed in a ring form of surrounding the circumference of the wafer, a ring-type groove is formed on a the bottom face coming in contact with a polishing pad, a part or all of the amounts pushed and protruding to the radius inside or the radius outside of the retainer ring by pushing the polishing pad pressurized by the retainer ring during the chemical mechanical polishing process is are accommodated in the groove of the retainer ring, the protruding amount of the polishing pad protruding out of the retainer ring is minimized, and it is possible to perform uniform polishing on the wafer edge adjacent to the inside of the retainer ring by the protruding of the polishing pad caused by pressurizing of the retainer ring. COPYRIGHT KIPO 2016 Chemical mechanical polishing controlled as retainer ring of a carrier head pressurized, said retainer ring the wafer is configured in the shape of a a ring wrapped around the, polishing pad are ring-shaped the bottom surface to characterized by retainer ring of carrier head for chemical mechanical polishing device. According to Claim 1, said width and third tungsten layers are anisotropically etched said width of a bottom surface of a retainer ring characterized by 1/3 or more retainer ring of carrier head for chemical mechanical polishing device. According to Claim 1, said said groove the radial inner of a bottom surface of a retainer ring disposed characterized by retainer ring of carrier head for chemical mechanical polishing device. According to Claim 1, said second and third tungsten layers are anisotropically radial inner direction and extends upwardly that stores boundary is characterized by retainer ring of carrier head for chemical mechanical polishing device. According to Claim 1, 2 heat at least said groove of said retainer ring in the form of the link is characterized by retainer ring of carrier head for chemical mechanical polishing device. According to Claim 5, said 2 heat or more groove each other in the first direction is different from a width to characterized by including retainer ring of carrier head for chemical mechanical polishing device. According to Claim 5, said 2 heat or more recesses most radius and third tungsten layers are anisotropically etched located inside a most width characterized by the cost of large retainer ring of carrier head for chemical mechanical polishing device. According to one of Claim 1 to Claim 7, said bottom retainer ring is formed in an inner radially along the circumferential direction groove plurality of the link is characterized by retainer ring of carrier head for chemical mechanical polishing device. Body and; said a base and driven in rotation with one single base body; said fixed orientation constrained, wall of a pressure chamber between said database is formed chemically by said pressure chamber for pressure control in a wafer bottom during mechanical polishing process pushes the with a membrane that; said chemical mechanical rate of polishing during a polishing process of an surface and contact pads, a wrapped around the of the membrane in accordance with any one of Claims 1 to Claim 7 retainer ring; characterized by includes is composed of carrier head for chemical mechanical polishing device.
