METHOD AND SYSTEM OF MANUFACTURING SOLAR CELL
The present invention refers to solar battery is provided to reduce the number, more specifically solar cell for the production of solar cell manufacturing method and solar cell fabrication system of the. Solar cell device as are controlled by changing the solar energy into electric energy, P type semiconductor and N type semiconductor as a non-setup utilizing an types of semiconductor 2. causing. Light solar cell is being spun internal in torque is generated between the electrons and the holes, the electric charges generated are P type semiconductor, by is developed moving with elder brother semiconductor N P type semiconductor and N type semiconductor voltages output from the data lines in which the is generated (photovoltaic), solar cell on the upper surface of the upper load. current. The silicon a protrusion/recess shape and are used solar cell material and compounds larger at its material is classification, again beamlike silicon a polycrystalline single crystal and a solar cell ultra-and non crystalline silicon is classification silicon. Current, solar photovoltaic power generation system is used as generally, to a wireless is is mostly solar cell beamlike silicon. In particular crystalline beamlike silicon single crystal and polycrystalline solar cell conversion efficiency and a wear resistance that is superior of wet liquid to flow down widely used high reliability. Wherein single crystal beamlike silicon solar cell chamber is high but is beneficial to shown in Figure 5, a board manufacturing cost. Dynamically allocates the channel signals to the polycrystalline beamlike silicon solar cell connected by a a single crystal silicon substrate and includes low for the cover, at a cheap manufacturing cost but metallic material with a large heat unit is off. As said crystalline beamlike silicon solar cell, in particular polycrystalline beamlike silicon can be produced at low cost a solar cell composition is easy to produced by consumption is HDP circumstances less efficient in which various is connected with a web page objects' traces to is required measures. While a solar height efficiency of solar cells is provided to battery structure as papers of learned Society, "high a metal protection rates and good transportation properties provided a highly effective n-type silicon solar cell on a backing protection for contact" of thesis (Passivated Rear Contacts for High-Efficiency n-type Si Solar Cells Providing High Interface Passivation Quality and Excellent Transport Characteristics; Solar Energy Materials and Solar Cells Volume 120, Part A, January 2014, Pages 270-274) is connected to the semiconductor layer.. According to in this essay, as shown in also 1, rear electrode prior to formation of a SiO2 layer and phosphorus p using the silicon layer is presented and structures formed. Said SiO2 layer, wet chemical oxide layer growth by the stator is formed of a 20 Å hereinafter is rotated by, p type semiconductor layer SiO2 layer form doped phosphorous of thickness 20 nm Si is formed by depositing a layer of an. After predetermined temperature by the heating SiO2 layer and phosphorus are doped Si layer is is activated. Said state of the SP heads and such as solar cell structure, but front aspect the hole, SiO2 layer and phosphorus are doped Si additional annealing GaN substrate process for the manufacture of the solar cell's operation, and displays results complex to solar cells and any increasing of manufacturing cost., is formed into the identified shape. The present purpose of the invention the, said to the discharge of the torch electrode from, rear electrode formed on SiO2 of the solar cell layer is formed the process in the manufacture of the production cost solar cells, which can a manufacturing method and solar cell fabrication respectively. system. And the present invention refers to said purpose of the invention to achieve the Company designates the member, the present invention refers to, silicon solar cell depth pre-the back-side of the substrate SiO2 layer after formation of as manufacturing method solar cells made of rear electrode is formed, rear electrode prior to formation of a silicon solar cell depth from the back-side of the substrate, implanting oxygen ions to said ion implantation steps and a number 1 ; said number 1 ion implantation ions are implanted into a raw material in the synthesis of the solar cell silicon substrate is heated SiO2 forming a layer including a heat treatment step to disclosure a solar cell characterized by a manufacturing method. Said number 1 after ion implantation steps an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor effective to form a number 2 implanting impurity ions at a high concentration ion implantation steps additionally comprises at, said a thermal processing step, said number 2 performance of ion implantation steps can be is carried out just after. Said SiO2 layer after formation of an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor effective to form a pouring a high concentration impurity ions number 2 additionally comprises at ion implantation steps, said number 2 a ion implantation steps, said impure ion is implanted for heating a substrate silicon of the solar cell generating high concentration forming a semiconductor layer may comprise an subsequent thermal processing step. A ion implantation steps said number 2 and said number 1 ion implantation steps, one process module that are separated from each other or two 2, wherein each node carries out a in a coating process or a developing process can be. A ion implantation steps said number 2 and said number 1 ion implantation steps, one process module that are separated from each other or two 2, wherein each node carries out a in a coating process or a developing process can be. Said said number 1 or after ion implantation steps SiO2 layer form an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor layer adjacent to the substrate for loading of high concentrations is formed at the inner portion of further may include semiconductor layer formation phase. Said high concentration semiconductor layer formation step, generating high concentration for heating a substrate silicon solar cell forming a semiconductor layer may comprise an subsequent thermal processing step. Said SiO2 layer, can be formed at a thickness of 5 Å - 20 Å it is preferred that a. In addition said SiO2 layer, which sheet has a thickness of 5 Å - 20 Å, said high concentration semiconductor layer, can be formed at a thickness of 10 nm -50 nm it is preferred that a. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 2 and ion implantation steps said number 1 after performance of ion implantation steps said silicon solar cell for heating a substrate including one or more heat treatment module to a system for producing a silicic acid solar cell characterized by. the disclosure. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 forming a layer number 1 heat treatment module and; said number 2 said solar cell performance of ion implantation steps after said high concentration silicon substrate is heated forming a semiconductor layer including number 2 heat treatment module to a system for producing a silicic acid solar cell characterized by. the disclosure. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 layer is formed and, said number 2 said solar cell performance of ion implantation steps after said high concentration silicon substrate is heated forming a semiconductor layer including heat treatment module to a system for producing a silicic acid solar cell characterized by. the disclosure. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 ion implantation steps and said number 2 number 1 for the implementation of ion implantation steps ion implantation and number 2 and process module configured for ion implantation of an automatic transmission is provided to; said said number 2 after performance of ion implantation steps heating substrate of silicon solar cell for use in a thermal processing module to including a system for producing a silicic acid solar cell characterized by. the disclosure. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1, said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 forming a layer number 1 part and heat setting part, so, said number 1 ion implantation and said number 1 number 1 including heat treatment process module and including number 1 process chamber; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2, said number 2 performance of ion implantation steps after said substrate is heated silicon solar cell said high concentration number 2 part and heat setting part, so forming a semiconductor layer, said number 2 ion implantation and said number 2 number 2 including heat treatment including number 2 process chamber to process module configured for including disclosure. a solar cell characterized by a system for producing a silicic acid. Said sequence of steps, each module sequentially can be arranged. Said one or more are to be combined module may include a transfer module. The present invention refers to in addition one or more solar silicon substrate while being safely seated the trays while is transferred to said solar cell such as for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1 ; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2 ; said number 2 and ion implantation steps said number 1 after performance of ion implantation steps for heating a substrate silicon solar cell said one or more part and heat setting part, so; to which an injection part and a ion said number 1, to which an injection part and a ion said number 2, of an automatic transmission is provided to said heat treatment in the process chamber in a system for producing a silicic acid solar cell characterized by including to. the disclosure. The present invention according to solar cell manufacturing method and solar cell fabrication system, solar cell in order to improve the efficiency the solar battery silicon the grooves SiO2 by receiving electric current into the layer a substrate by irradiating ion beam by ion implantation, wet method of the existing method method by silicon substrate solar cell than SiO2 layer thickness of the as to exactly control the service channels from the light contact point is turned off. Further SiO2 layer formation of ion implantation processes for the and performed by, SiO2 on the high concentration semiconductor layer formation processes for the ion implantation or deposition process which is formed by effecting SiO2 layer agent and high level semiconductor layer an inspecting mask and a more accurate thickness forming elastically supports the opening and closing is connected to the semiconductor layer.. In particular, uniform ion implantation of the semiconductor can the backside of for producing a thin by cutting its control which faces the bottom surface, SiO2 both semiconductor layer agent and high level layer is performed by ion implantation, the impurity is the distribution of the uniform substrate oxide layer are such as PSG revolutions and to be vertically movable. and can be produced with high productivity. In addition SiO2 layer agent and high level semiconductor layer by ion implantation both when heating is carried out in the SiO2 layer and high concentration semiconductor layer substrate are connected with a the manufacturing cost significantly reduce a contact point is turned off. While a solar height efficiency of solar cells is provided to battery structure as papers of learned Society, "high a metal protection rates and good transportation properties provided a highly effective n-type silicon solar cell on a backing protection for contact" of the existing method method disclosure instructions on our paper of a silicon solar cell in the case of the grooves by deposition SiO2 layer agent and high level semiconductor layer deposited by wet deposition method or the like equally surface deposition wherein during the formation of a rear electrode formed on the first concave part and deficiency (Defect) lowering efficiency of solar cells is generated, is formed into the identified shape. According to in particular of the existing method method, SiO2 layer agent and high level semiconductor layer exclusively via a deposition of burn 2 where only a is open to discharge air. However, the present invention according to the manufacturing method solar cell, SiO2 layer agent and high level semiconductor layer through deposition of burn 2 instead of the existing method method, ion implantation of a substrate using an alkali metal into predetermined depth SiO2 layer is formed and, semiconductor high concentration to the surface to a prescribed depth in the back-side of the substrate, most of the blow-by low for the preparation of surface-bonded flat plate is transferred to print the deficiency electrode is formed by the rear surface of the work is a solar cell a contact point is turned off. Figure 1 shows a also, the present invention according to solar cell manufacturing method of the solar cell produced by 2007. the cross show. Also Figure 2 shows a, 2007 solar cell the present invention according to a order of manufacturing method. The 3c to 3a also, the present invention according to solar cell manufacturing method for carrying out solar cell examples a concept their. Hereinafter the present invention according to solar cell manufacturing method and solar cell fabrication control valve controls the amount of air with an reference to drawing. off at the first and the second. Solar cell the present invention according to the manufacturing method, as shown in also 2, solar cell silicon substrate (10) to the back face of the SiO2 layer (11) after formation of rear electrode (16) is formed as manufacturing method solar cells made of, rear electrode (16) prior to formation of a a, implanting oxygen ions to ion implantation steps number 1 (S100) and a; number 1 (S100) ion implantation steps solar cell are implanted oxygen ion in silicon substrate (10) by heating so that the SiO2 layer (11) for forming (S300) includes a thermal processing step. Wherein the present invention according to solar cell manufacturing method by a solar cells made of, as shown in 1 also, solar cell silicon substrate (10) to the back face of the SiO2 layer (11) on a seat any if. a vehicle height to an uphill running. Said substrate (10) pre-rear surface of formed depth SiO2 layer (11) the, solar cell silicon substrate (10) attached to inner edges and a rear electrode (16) hole (carrier) tunnel multiplexers between height efficiency of the solar cell by the objective compound.. In addition said SiO2 layer (11) the, substrate (10) pre-depth rear surface of make a high capacitance by solar cell silicon substrate (10) in SiO2 layer (11) has based up and down with of the solar cell are located above the silicon substrate (10) and a rear electrode between tunnel multiplexers hole (carrier) is leading to high. The present invention according to solar cell manufacturing method is applied solar cells made of silicon substrate (10) the n type semiconductor properties or p type one of the characteristics of a semiconductor is the base semi-conductive characteristics, substrate on the upper surface (10) opposite the characteristics of a semiconductor of a semiconductor layer (13), passivation (14 ; passivation layer) and anti-reflective film (15) can be sequentially formed. On the other hand, said a solar cell, various structures can be electrodes are formed on the, as shown in also 1, upper surface electrode (17) and the rear plane electrode (16) can be formed is. Wherein the light-receiving area electrodes of solar cell well as to increase the substrate (10) can be formed only rear surface of. Ion implantation steps (S100) said number 1 the, rear electrode (16) prior to formation of a O3 such as to, implanting oxygen ions to, oxygen ions to solar cell silicon substrate (10) to the back face of the irradiating the ion beam irradiation as can be performed by device. Said number 1 wherein the (S100) ion implantation steps, oxygen ions to substrate (10) pre-depth rear surface of SiO2 layer (11) provided to form a of, implanting oxygen ions to a corresponding depth. Specifically, said SiO2 layer (11) a substrate (10) of thickness uniformity in predetermined depth groove is formed in need, to this end substrate (10) pre-rear surface of depth is ions are implanted into oxygen. And said oxygen ion predetermined implantation depth a, applied during fuel injection is determined by energy of ions, implant of oxygen ions beneath the wall layer, i.e. SiO2 layer (11) being implanted and a thickness for forming an oxygen ion is determined by amount of. Said number 1 and the (S100) ion implantation steps, SiO2 layer (11) 20 Å hereinafter thickness for forming, preferably 5 Å - 20 Å to may be strength and ion beam, in which the scanning is irradiation time can be selected. In addition high concentration semiconductor layer refers to (12) additional formed silicon substrate so that the solar battery (10) from the surface of the preset depth sufficient oxygen ion into means are strength and illuminated so that at is irradiation time can be selected. In particular refers to high concentration semiconductor layer (12) thickness for forming, 10 nm -50 nm, more preferably 20 nm silicon substrate the solar battery into account in (10) or depth of 10 nm -50 nm from the surface of 20 nm means are oxygen ion into strength and illuminated so that at is irradiation time can be selected. The (S300) said thermal processing step, ion implantation steps number 1 (S100) solar cell are implanted oxygen ion in silicon substrate (10) by heating so that the SiO2 layer (11) by forming the various method can be performed by. Said SiO2 layer (11) for forming the temperature conditions, it is preferred that a 600 °C -1200 ° C. Specifically said thermal processing step in (S300), less than or 1200 °C if the reacquisition time is greater than 600 °C SiO2 layer (11) is formed may be sufficient under or interface is provided to reduce the fabricating that suddenly effect due to the presence of an the thermal processing step (S300), 600 °C -1200 ° C carried out at a temperature of it is preferable that the. While manufacturing method by the present invention according to solar cell substrate solar cells made of (10) to rear electrode (16) at the time of forming rear electrode (16) such solar battery silicon substrate (10) which is specific for and binds directly to prevent backside of, it is necessary that. The solar cell silicon substrate (10) and the rear plane electrode (16) between the, as shown in 1 also, solar cell silicon substrate (10) an upper side of the trench area rear surface of solar cell silicon substrate (10) semiconductor identical to the properties with semiconducting properties for loading of high concentrations semiconductor layer (12) is formed, it is necessary that. Wherein said SiO2 layer (11) from outside of the substrate (10) high concentration formed rear surface of semiconductor layer (12) the, solar cell in a total structure BSF (Back Surface Field) and the rear plane electrode (16) during the formation of a electrode material SiO2 layer (11) is in contact with the outer surface in which a drilling a hole in bone and to prevent can be and the procedure part is mined. While said high concentration semiconductor layer (12) the, substrate backside by heat treatment is where the dopant for method, an impurity ion implantation process and a-ring from method is connected to the semiconductor layer.. First, said high concentration semiconductor layer (12) by receiving electric current into the substrate backside by heat treatment is where the dopant for method when the mother pipe having a, solar cell the present invention according to the manufacturing method, or after ion implantation steps number 1 SiO2 layer form an upper side of the trench area the back-side of the substrate silicon solar cell semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor layer adjacent to the substrate for loading of high concentrations is formed at the inner portion of further may include semiconductor layer formation phase. Said high concentration semiconductor layer formation phase, CVD, ALD, PVD, the thermal diffusion law through the process of evaporation such as the solar cell constitution: the thick silicon the back-side of the substrate forming a semiconductor layer of the substrate for being patterned to various method can be is used. On the other hand, said high concentration semiconductor layer formation step, generating high concentration for heating a substrate silicon solar cell forming a semiconductor layer a includes annealing. Wherein said annealing step, ion implantation steps number 1 (S100) solar cell are implanted oxygen ion in silicon substrate (10) by heating so that the SiO2 forming a layer so that thermal processing step (S300) is performed (S300) with simultaneously performing the thermal processing step, such as performing separate. various combinations. Next, said high concentration semiconductor layer (12) by receiving electric current into the an impurity ion implantation process and a-ring from method when the mother pipe having a, solar cell the present invention according to the manufacturing method, ion implantation steps (S100) number 1 after solar cell silicon substrate (10) semiconductor identical to the properties with semiconducting properties for loading of high concentrations semiconductor layer (12) to form number 2 implanting impurity ions at a high concentration ion implantation steps can be further includes is (S200). The (S200) ion implantation steps said number 2, rear electrode (16) solar cell during the formation of a silicon substrate (10) direct backside of and combining the solar cell silicon substrate can be prevented (10) the SiO2 layer (11) and the rear plane electrode (16) between solar cell silicon substrate (10) number 1 (S100) ion implantation steps an upper side of the trench area rear surface of solar cell after silicon substrate (10) semiconductor identical to the properties with semiconducting properties for loading of high concentrations semiconductor layer (12) to form impurity ions at a high concentration step which consists in injecting a is carried out by ion implantation as. The (S200) ion implantation steps said number 2, solar cell silicon substrate (10) when the characteristics of a semiconductor type n is, SiO2 layer (11) than outer, i.e. the rear surface of the cloth part the outermost rack may have semi-conductive characteristics high concentration of n type impurities ions are implanted into inserted by a. Wherein said concentration depth and being implanted impurity ions, the Image pattern from the ion and amount of can be determined by energy. Ion implantation steps said number 2 the (S200), impure ion is implanted silicon substrate of the solar cell (10) includes annealing heating a final to solar cells and silicon substrate (10) semiconductor identical to the properties with semiconducting properties for loading of high concentrations semiconductor layer (12) is formed on. Said high concentration semiconductor layer (12) for forming annealing step, solar cell impurities ion implanted silicon substrate (10) by heating the solar cell silicon substrate (10) rear surface of, in particular SiO2 semiconductor layer of the substrate for being patterned to outer surface than the low permeability layer (12) forming a various method can be performed by. For example, impurities 800 °C -900 °C when in (P), boron (Boron) when it is preferred that a 800 °C -1200 ° C. On the other hand, said annealing step, ion implantation steps number 1 (S100) solar cell are implanted oxygen ion in silicon substrate (10) by heating so that the SiO2 thermal processing step forming a layer (S300) is performed so that the. various combinations. I.e., said number 2 number 1 (S200) ion implantation steps (S100) oxygen ion in the ion implantation steps solar cell are implanted silicon substrate (10) by heating so that the SiO2 performance of thermal processing step forming a layer (S300) can be is carried out just after. Ion implantation steps in addition said number 1 (S100) solar cell are implanted oxygen ion in silicon substrate (10) by heating so that the SiO2 thermal processing step forming a layer the (S300), coordinates with subsequent thermal processing step, i.e., ion implantation steps (S100) number 1 and number 2 (S200) is carried out just after ion implantation steps by performance of SiO2 layer agent and high level semiconductor layer (12) can be simultaneously. Wherein said SiO2 layer agent and high level semiconductor layer (12) (S300) thermal processing step a time when formed formed by bilayer composite of forming conditions, for example high concentration semiconductor layer (12) the active mode, and for conserving require temperature conditions is higher corresponding high concentration semiconductor layer (12) for forming the heat generation unit 800 °C -1200 ° C before drawing the yarn and heating is performed under temperature conditions of it is preferable that the. Said thermal processing step (S100) (S300) is number 1 and number 2 ion implantation steps ion implantation steps carried out after the performance of (S200) when refers to solar cell in a possible position of a, said number 2 number 1 ion implantation steps (S100) and the (S200) ion implantation steps, one process module that are separated from each other or two 2 be in a coating process or a developing process. Said solar cell manufacturing method such as the, SiO2 layer agent and high level semiconductor layer being deposit is not formed by ion implantation method in accordance with low for the preparation of surface-bonded deficiency electrode is formed by the rear surface of the work is a solar cell a contact point is turned off. In addition said SiO2 layer agent and high level semiconductor layer in the formation and high level implantation of impurity ions implant of oxygen ions beneath the wall a at once by one by the solar cell process using the interpolated value group consisting of is formed contact point is turned off. While solar cell such as said solar cell for performing the manufacturing method of manufacturing method, ion implantation steps number 1, number 2 and heat treatment steps after ion implantation steps according to combination of various measures are.. First, the solar cell the present invention according to, ion implantation steps number 1 number 2 and ion implantation steps for carrying out one or more process module and, number 1 number 2 and ion implantation steps in at least one of ion implantation steps silicon solar cell to one or more heat treatment for heating a substrate may include a module. Number 1 number 2 and ion implantation steps further ion implantation steps and heat treatment steps after one module, to the process chamber one by one can be run at, the solar cell the present invention according to the, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1 ; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2 ; said number 2 and ion implantation steps said number 1 after performance of ion implantation steps for heating a substrate silicon solar cell said one or more part and heat setting part, so; to which an injection part and a ion said number 1, to which an injection part and a ion said number 2, said heat treatment including process chamber may comprise an. And, heat treatment module process module, each sequence of steps, sequentially disposed-line type, one chamber in which a module heat treatment process module of a polyimide resin, such type cluster permits structure. While the solar cell the present invention according to, number 1 number 2 and ion implantation steps for performance of a ion implantation steps number of process module configured for, thermal processing step a material having the high the execution sequences of. styles embodiment. Number 1 and number 2 in the embodiment as, the solar cell system in accordance with of the present invention number 1 and number 2 embodiment, 3a and 3b also as shown in to, one or more solar silicon substrate (10) the trays (110) while being safely seated while is transferred to SiO2 layer (11) and high level semiconductor layer (12) forming a solar cell for carrying out the same are for fabricating solar cell system of manufacturing method, (S100) for carrying out ion implantation steps number 1 number 1 ion implantation part is (210) with a coating process or a developing process number 1 (21) and ; (S200) for carrying out ion implantation steps number 2 number 2 ion implantation part is (220) number 2 with [...][...][...] (22) and; ion implantation steps (S100) number 1 number 2 and solar cell after performance of ion implantation steps (S200) silicon substrate (10) heating one or more heat treatment module (30, 31, 32) may include a. A coating process or a developing process said number 1 (21) and a coating process or a developing process number 2 (22) the, mobile solar cells made of silicon substrate (10) to oxygen ion/heavily of impurity ions ion beam emitting device as a module, ion beam irradiation for ion radiating section, a (210,220) are provided on. Said heat treatment module (30) the, ions are implanted into silicon substrate of the solar cell (10) for heating as a module, also as shown in 3a, a coating process or a developing process number 1 (21) and a coating process or a developing process number 2 (22) is first a coating process or a developing process after number 2 (22) is following may be connected to one. In addition said heat treatment module (31,32) the, also as shown in 3b, a coating process or a developing process number 1 (21) and a coating process or a developing process number 2 (22) between, and a coating process or a developing process number 2 (22) may be connected to is following. I.e., as number 2 in the embodiment, the solar cell system: an of the present invention number 2 embodiment, for carrying out ion implantation steps number 1 number 1 ion implantation part is (S100) (210) with a coating process or a developing process number 1 (21) and ; (S200) for carrying out ion implantation steps number 2 number 2 ion implantation part is (220) with a coating process or a developing process number 2 (22) and; number 1 (S100) ion implantation steps after performance of said solar cell silicon substrate (10) by heating so that the SiO2 layer (11) for forming heat treatment module number 1 (31) and; number 2 (S200) solar cell after performance of ion implantation steps silicon substrate (10) by heating so that the shareripper semiconductor layer (12) for forming number 2 heat treatment module (31) may include a. In addition said number 1 heat treatment module (31) and said number 2 heat treatment module (31) the, each process module number 1 (21) and a coating process or a developing process number 2 (22) can be merged, the modified system for fabricating solar cell, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1, said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 forming a layer number 1 part and heat setting part, so, said number 1 ion implantation and said number 1 number 1 including heat treatment process module and including number 1 process chamber; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2, said number 2 performance of ion implantation steps after said substrate is heated silicon solar cell said high concentration semiconductor forming a layer number 2 part and heat setting part, so, said number 2 ion implantation and said number 2 number 2 including heat treatment including number 2 process chamber may include a process module. On the other hand, said number 2 and said number 1 ion implantation steps ion implantation steps (S100) the (S200), as shown in also 3c, one process module (20) be in. I.e., as number 3 in the embodiment, according for fabricating solar cell system of the present invention number 3 embodiment, also as shown in 3a, ion implantation steps number 1 and number 2 ion implantation stage (S100) (based S200) for the implementation of number 1 ion implantation part is (210) and number 2 ion implantation part is (220) is provided process module configured for (20) and; number 2 (S200) solar cell after performance of ion implantation steps silicon substrate (10) heating for use in a thermal processing module (30) may include a. On the other hand, also to 3a 3b also undesirable described during each drawing code 40 and 50 to modules, especially modules process outside [...] the load for introduced substrate, connected to the second wire group for an outer surface of the body substrate after the mean [...]. And for ion implantation in the embodiment are of the specific process module configured for, number 10-2011-0087979 call call and Public Patent Notification number 10-2011-0123983 Korean disclosure is provided by varying a rotation radius dispensed the described details. On the other hand, the solar cell the present invention according to, one heat treatment as a module, when the cluster type, heat treatment module (30) the, number 1 after performance of ion implantation steps (S100) solar cell silicon substrate (10) by heating so that the SiO2 layer (11) is formed, ion implantation steps number 2 (S200) after performance of solar cell silicon substrate (10) by heating so that the high concentration semiconductor layer (12) capable of forming a.. Least the present invention can be implemented by a preferred embodiment describes the a part the first deoxygenator to the mike and the, known as embodiment aspect of the present invention on range is limited, will don't interpreted, as set out on root and technical idea of the present invention for able to muddle along for a technical idea all included within the scope of the present invention will a dotted. 10: substrate 11: SiO2 layer 12: high concentration semiconductor layer Process module 21: number 1 Process module 22: number 2 30: heat treatment module The present invention relates to a solar cell, and more specifically, to a method and system of manufacturing a solar cell. According to an embodiment, a method of manufacturing a solar cell in which a backside electrode is formed after forming an SiO_2 layer at a preset depth from the backside of a solar cell silicon substrate, comprises: a first ion injecting step of injecting oxygen ions at the depth from the backside of the solar cell silicon substrate prior to the formation of the backside electrode; and a thermal treatment step of forming an SiO_2 layer by heating the solar cell silicon substrate into which the oxygen ions are injected in the first ion injecting step. Thus, by injecting ions into the solar cell silicon substrate by emitting an ion beam, the thickness of an SiO_2 layer on the solar cell silicon substrate can be accurately controlled. COPYRIGHT KIPO 2016 Silicon solar cell depth pre-the back-side of the substrate SiO2 layer after formation of as manufacturing method solar cells made of rear electrode is formed, rear electrode prior to formation of a silicon solar cell depth from the back-side of the substrate, implanting oxygen ions to said ion implantation steps and a number 1 ; said number 1 ion implantation ions are implanted into a raw material in the synthesis of the solar cell silicon substrate is heated SiO2 forming a layer including a heat treatment step to characterized by solar cell manufacturing method. According to Claim 1, said number 1 after ion implantation steps an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor effective to form a number 2 implanting impurity ions at a high concentration ion implantation steps additionally comprises at, said a thermal processing step, said number 2 carried out after the performance of ion implantation steps to characterized by solar cell manufacturing method. According to Claim 1, said SiO2 layer after formation of an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell with semiconducting properties identical to the properties for loading of high concentrations semiconductor effective to form a pouring a high concentration impurity ions number 2 additionally comprises at ion implantation steps, said number 2 a ion implantation steps, said impure ion is implanted for heating a substrate silicon of the solar cell generating high concentration forming a semiconductor layer annealing step to including characterized by solar cell manufacturing method. According to Claim 2, said number 2 and a ion implantation steps ion implantation steps said number 1,2 that are separated from each other or one process module two carried out each a coating process or a developing process characterized by solar cell manufacturing method. According to Claim 3, said number 2 and a ion implantation steps ion implantation steps said number 1,2 that are separated from each other or one process module two carried out each a coating process or a developing process characterized by solar cell manufacturing method. According to Claim 1, said said number 1 or after ion implantation steps SiO2 layer form an upper side of the trench area the back-side of the substrate silicon solar cell said said semiconductor silicon solar cell identical to the properties for loading of high concentrations with semiconducting properties is formed at the inner portion of semiconductor layer adjacent to the substrate for loading of high concentrations semiconductor layer formation phase to characterized by further including solar cell manufacturing method. According to Claim 6, said high concentration semiconductor layer formation step, generating high concentration for heating a substrate silicon solar cell forming a semiconductor layer annealing step to including characterized by solar cell manufacturing method. Claim 1 to claim 7 as described in claim one of, said SiO2 layer, can be formed at a thickness of 5 Å - 20 Å to characterized by solar cell manufacturing method. Claim 2 to claim 7 as described in claim one of, said SiO2 layer, which sheet has a thickness of 5 Å - 20 Å, said high concentration semiconductor layer, can be formed at a thickness of 10 nm -50 nm to characterized by solar cell manufacturing method. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 2 according to solar cell of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 2 and ion implantation steps said number 1 after performance of ion implantation steps said silicon solar cell for heating a substrate including one or more heat treatment module to characterized by solar cell. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 3 according to solar cell of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 forming a layer number 1 heat treatment module and; said number 2 said solar cell performance of ion implantation steps after said high concentration silicon substrate is heated forming a semiconductor layer including heat treatment module to number 2 characterized by solar cell. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 3 according to solar cell of manufacturing method for carrying out the same are for fabricating solar cell system, for carrying out ion implantation steps said number 1 number 1 number 1 including ion implantation process module and; for carrying out ion implantation steps said number 2 number 2 number 2 including ion implantation process module and; said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 layer is formed and, said number 2 said solar cell performance of ion implantation steps after said high concentration silicon substrate is heated forming a semiconductor layer including heat treatment module to characterized by solar cell. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 2 according to solar cell for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 ion implantation steps and said number 2 number 1 for the implementation of ion implantation steps ion implantation and number 2 and process module configured for ion implantation of an automatic transmission is provided to; said said number 2 after performance of ion implantation steps heating substrate of silicon solar cell for use in a thermal processing module to including characterized by solar cell. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 3 according to solar cell for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1, said number 1 after performance of ion implantation steps said solar cell silicon substrate is heated SiO2 forming a layer number 1 part and heat setting part, so, said number 1 ion implantation and said number 1 number 1 including heat treatment process module and including number 1 process chamber; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2, said number 2 performance of ion implantation steps after said substrate is heated silicon solar cell said high concentration number 2 part and heat setting part, so forming a semiconductor layer, said number 2 ion implantation and said number 2 number 2 including heat treatment including number 2 process chamber to process module configured for including characterized by solar cell. One or more solar silicon substrate while being safely seated the trays while is transferred to claim 2 according to solar cell for carrying out the same are for fabricating solar cell system of manufacturing method, said number 1 for carrying out ion implantation steps to which an injection part and a ion number 1 ; said number 2 for carrying out ion implantation steps to which an injection part and a ion number 2 ; said number 2 and ion implantation steps said number 1 after performance of ion implantation steps for heating a substrate silicon solar cell said one or more part and heat setting part, so; to which an injection part and a ion said number 1, to which an injection part and a ion said number 2, said heat treatment in the process chamber in an automatic transmission is provided to easily to including characterized by solar cell.
