LIGHT EMITTING DEVICE AND LIGHTING SYSTEM

In to the elucidation of the example embodiment, each layer (film), region, pattern or structures substrate, each layer (film), region, pad or patterns "on/on (on/over)" or "(under) below" when described to be formed in, "on/(on/over) on" on "below (under)" is "direct (directly)" or "(indirectly) via another layer" includes both the formation. In addition to on/above or below reference is based on the drawing of each layer are described as follows.

Figure 1 shows a light-emitting element according to embodiment example is also shown in perspective view, Figure 2 shows a I a-I ' and a light-emitting element cutting along the line shown in the cross-sectional drawing, drawing and shown in Figure 3 of Figure 2 A region, light extraction structure of Figure 1 is shown in Figure 4 are disclosed.

Also as shown in 1 to 4 also, embodiment example light emitting device (100) the top electrodes are exposed to be a horizontal type. Embodiment example light emitting device (100) a light-emitting structure (110) can be comprising. Embodiment example light emitting device (100) can be improve a light extraction efficiency. To this end one embodiment example light emitting device (100) light has a light extraction structures (112a) at least one of the structure (110) can be comprising.

Specifically embodiment example light emitting device (100) a light-emitting structure (110), resin layer (130), substrate (101), translucent electrode layer (140), number 1 and number 2 electrode (151, 153) can be comprising.

Said light emitting structure (110) is number 1 conductive-type semiconductor layer (112), active layer (114) and number 2 conductive-type semiconductor layer (116) can be comprising.

Said number 1 conductive-type semiconductor layer (112) is semiconductor compound, group II and group III - IV - V for example can be implemented layer of a compound semiconductor such as group group. Said number 1 conductive-type semiconductor layer (112) is single or multi-layer can be formed. Said number 1 conductive-type semiconductor layer (112) is number 1 conductive-type dopant can be doped with disclosed. For example said number 1 conductive-type semiconductor layer (112) when the n-type semiconductor layers, can be n type dopant. the n-type dopant such as Si, Ge, Sn, Se, including but not limited to Te. Said number 1 conductive-type semiconductor layer (112) is In_x Al_y Ga_{1 a-x-a y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1) but having a semiconductor material of the superconductor, the pieces are not correct. For example said number 1 conductive-type semiconductor layer (112) is GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP can be in NaCl.

Said number 1 conductive-type semiconductor layer (112) light extraction structure (112a) can be a. Said light extraction structure (112a) whose cross section can be a bone having acid is formed, is not limited to, polygonal or having a curvature shape that allows for the disapproval. Said light extraction structure (112a) light has a light extraction efficiency can be improved. Said light extraction structure (112a) is said number 1 conductive-type semiconductor layer (112) can be disposed beneath the. Said light extraction structure (112a) but may have a height and width of 1 micro m hereinafter is, limited to are not correct. Said light extraction structure (112a) has a width of 1 nm to 1 micro m may have. Said light extraction structure (112a) has a height of 1 nm to 1 micro m may have. Said light extraction structure (112a) is random size may have. I.e., said light extraction structure (112a) may have a different height and width are selected.

Said light extraction structure (112a) is 500 nm or more patterns can be at least 10% of the whole. Said light extraction structure (112a) is 500 nm or more to further enhance light extraction efficiency can be at least 30% of the entire patterns.

Said light extraction structure (112a) PEC (Photo Electro Chemical) is formed by etching process but, limited to are not correct. Said light extraction structure (112a) includes said light emitting structure (110) for extracting function outside of light including light extraction effects capable of.

One embodiment example light emitting element (100) includes a number 1 conductive-type semiconductor layer (112) on said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the system having the general light emitting light extraction efficiency can be improved. In addition, one embodiment example light emitting device (100) includes a number 1 conductive-type semiconductor layer (112) on said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the upper crystalline which corresponds to the general light emitting device can be.

Said active layer (114) is said number 1 conductive-type semiconductor layer (112) to be placed over a be. Said active layer (114) single quantum well, multiple quantum well (MQW), both line (quantum wire) (quantum dot) can be optionally include structure or quantum dot structure. Said active layer (114) is compound can be composed of a semiconductor. Said active layer (114) is further provided at least one group III and group II - IV - V group compound semiconductor as one group can be implemented.

Said active layer (114) when the multiple quantum-well structure (MQW) implemented, quantum well and both walls can be alternately arranged. Each said quantum well and quantum wall In_x Al_y Ga_{1 a-x-a y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1) be a superconductor of semiconductor material with a. For example said active layer (114) is InGaN/GaN, InGaN/AlGaN, InGaN/InGaN, InAlGaN/InAlGaN, GaN/AlGaN, InAlGaN/GaN, GaInP/AlGaInP, GaP/AlGaP, InGaP/AlGaP, GaAs/AlGaAs, InGaAs/AlGaAs formed pair structure comprises at least one polymer but not the limited to.

Said number 2 conductive-type semiconductor layer (116) is said active layer (114) to be placed over a be. Said number 2 conductive-type semiconductor layer (116) is semiconductor compound, for example group II and group III - IV - V group compound semiconductor group can be implemented. Said number 2 conductive-type semiconductor layer (116) is single or multi-layer can be formed. Said number 2 conductive-type semiconductor layer (116) is number 2 conductive-type dopant can be doped with disclosed. For example said number 2 conductive-type semiconductor layer (116) when the p type semiconductor layers, can be p type dopant. For example said p type dopant Mg, Zn, Ca, Sr, Ba and the like but not the limited to. Said number 2 conductive-type semiconductor layer (116) is In_x Al_y Ga_{1 a-x-a y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1) of the superconductor having a semiconductor material but not the limited to. For example said number 2 conductive-type semiconductor layer (116) is GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP can be in NaCl.

Said light emitting structure (110) is n-type semiconductor layer said number 1 conductive-type semiconductor layer (112), p number 2 light-conductive-type semiconductor layer (116) into place but is described, said number 1 conductive-type semiconductor layer (112) a p-type semiconductor layer, said number 2 conductive-type semiconductor layer (116) may be a n-type semiconductor layer formed, limited to are not correct. Said number 2 conductive-type semiconductor layer (116) said number 2 on n-type semiconductor layer (not shown) that has a polarity opposite to the first conductivity semiconductor for example can be formed. In the control structure (110) is n-a p junction structure, p a-n junction structure, n-a p a-n junction structure, either structure can be implemented by p-a n a-p junction structure.

Said translucent electrode layer (140) is said number 2 conductive-type semiconductor layer (116) can be disposed on. Said translucent electrode layer (140) can be via the comprising, hole injection efficiently to a single metal or metal alloy, metal oxide or the like can be formed by stacking multiple. E.g., said translucent electrode layer (140) is an excellent electrical contact can be formed to the semiconductor. For example said translucent electrode layer (140) is ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al a-Ga ZnO), IGZO (In a-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO and, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, can be contained within at least one of Hf, not limited to this material.

Said resin layer (130) is number 1 conductive-type semiconductor layer (112) can be disposed beneath the. Said resin layer (130) is said number 1 conductive-type semiconductor layer (112) can be in direct contact with the lower face. Said resin layer (130) is said number 1 conductive-type semiconductor layer (112) and said substrate (101) disposed between said substrate (101) can be adhesion function.

Said resin layer (130) is 70% or more may have permeability. Said resin layer (130) is 90% or more permeability may have. Said resin layer (130) is benzocyclobutene (BCB), SU provided 8, acrylic or organic material, inorganic material or combinations thereof such as SOG can.

Said resin layer (130) is 3 to 10 micro m thickness of micro m (130W) may have a. Said resin layer (130) thickness (130W) is said light extraction structure (112a) may be bigger than the height of. Said resin layer (130) thickness (130W) is said light extraction structure (112a) than the height of 3 can be twice as large. Said resin layer (130) thickness (130W) is less than 3 micro m when, said number 1 conductive-type semiconductor layer (112) light extraction structures (112a) substrate (101) of said contact light extraction structure (112a) can be damaged. Said resin layer (130) thickness (130W) is greater than 10 micro m when, said resin layer (130) is formed of a plate shape can be a decrease in functionality.

Said substrate (101) is 70% or more may have permeability. Said substrate (101) is 90% or more permeability may have. Sapphire (Al₂ O₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge or Ga₂ 0₃ Using at least one of can.

Said number 1 electrode (151) is said number 1 conductive-type semiconductor layer (112) can be electrically connected. Said number 1 electrode (151) is said number 1 conductive-type semiconductor layer (112) can be disposed on. Said number 1 electrode (151) is used herein, said light extraction structure (112a) is said number 1 conductive-type semiconductor layer (112) can be disposed beneath the, said number 1 electrode (151) is said active layer (114) and said number 2 conductive-type semiconductor layer (116) exposed from said number 1 conductive-type semiconductor layer (112) disposed on but, limited to are not correct.

Said number 2 electrode (153) said number 2 is conductive-type semiconductor layer (116) can be electrically connected. Said number 2 electrode (153) is said translucent electrode layer (140) can be disposed on. Said number 2 electrode (153) is said translucent electrode layer (140) can be in direct contact with.

Said number 1 and number 2 electrode (151, 153) is Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, be a metal or alloy including at least one of Hf. Said number 1 and number 2 electrode (151, 153) said metal or alloy is ITO (Indium-a Tin provided Oxide), IZO (Indium-a Zinc provided Oxide), IZTO (Indium-a Zinc-a Tin provided Oxide), IAZO (Indium-a Aluminum provided Zinc provided Oxide), IGZO (Indium-a Gallium-a Zinc provided Oxide), IGTO (Indium-a Gallium-a Tin provided Oxide), AZO (Aluminum provided Zinc provided Oxide), and a transparent conducting ATO (Antimony provided Tin provided Oxide) be a single or multi-layer.

70% or more resin layer which has a light-emitting element of embodiment example (130) and substrate (101) can be including optical loss. The, embodiment example light emitting device (100) includes a light emitting efficiency is improved can be.

Embodiment example light emitting device (100) includes a random height and width of 1 micro m hereinafter light extraction structure (112a) at least one of the structure (110) including light extraction efficiency can be improved.

Example light emitting device embodiment (100) includes a number 1 conductive-type semiconductor layer (112) below said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the upper crystalline which corresponds to the general light emitting device can be.

Embodiment example light emitting device (100) a light-emitting structure (110) the thickness of the resin layer after a stand-alone number of growth substrate (130) the substrate (101) can be attached. The, light emitting structure (110) can be [...] playback growth substrate for growing number [...]..copyright 2001.

Figure 8 shows a light emitting element according to example 5 embodiment also shown in cross-section step number bath to also are disclosed.

The reference also 5, light emitting diodes of example number bath step first embodiment, growth substrate (10) arranged on structure (110) is formed, mesa etching number 1 through conductive-type semiconductor layer (112) part of (112U) is active layer (114) and number 2 conductive-type semiconductor layer (116) can be exposed from.

Said substrate (10) is single or multi-layer can be formed. Said substrate (10) be a conductive substrate or insulating substrate. For example said substrate (10) is GaAs, sapphire (Al₂ O₃ ), SiC, Si, GaN, ZnO, GaP, InP, Ge and Ga₂ 0₃ Can be at least one of. Said substrate (10) comprises a light emitting structure (110) is formed surface cleaned after number 1308. volatile impurities.

For example said light emitting structure (110) is organic metal chemical vapor deposition (MOCVD; Metal Organic Chemical Vapor Deposition), chemical vapor deposition (CVD; Chemical Vapor Deposition), plasma chemical vapor deposition (PECVD; Plasma a-Enhanced Chemical Vapor Deposition), molecular beam growth (MBE; Molecular Beam Epitaxy), hydride vapor deposition method (HVPE; Hydride Vapor Phase Epitaxy) but formed of, limited to are not correct. Said number 1 conductive-type semiconductor layer (112), active layer (114) and number 2 conductive-type semiconductor layer (116) is also 1 to of Figure 4 embodiment example light emitting device (100) technical features can be employed disclosed.

6 also reference surface, translucent electrode layer (140), number 1 and number 2 electrode (151, 153) light emitting structure (110) can be formed on.

Said translucent electrode layer (140) is said number 2 conductive-type semiconductor layer (116) can be disposed on. Said translucent electrode layer (140) can be via the comprising, hole injection efficiently to a single metal or metal alloy, metal oxide or the like can be formed by stacking multiple. E.g., said translucent electrode layer (140) is an excellent electrical contact can be formed to the semiconductor. For example said translucent electrode layer (140) is ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al a-Ga ZnO), IGZO (In a-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO and, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, can be contained within at least one of Hf, not limited to this material.

Said number 1 electrode (151) is said number 1 conductive-type semiconductor layer (112) can be electrically connected. Said number 1 electrode (151) is said number 1 conductive-type semiconductor layer (112) can be disposed on. Said number 1 electrode (151) is used herein, said light extraction structure (112a) is said number 1 conductive-type semiconductor layer (112) can be disposed beneath the, said number 1 electrode (151) is said active layer (114) and said number 2 conductive-type semiconductor layer (116) exposed from said number 1 conductive-type semiconductor layer (112) disposed on but, limited to are not correct.

Said number 2 electrode (153) said number 2 is conductive-type semiconductor layer (116) can be electrically connected. Said number 2 electrode (153) is said translucent electrode layer (140) can be disposed on. Said number 2 electrode (153) is said translucent electrode layer (140) can be in direct contact with.

Said number 1 and number 2 electrode (151, 153) is Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, be a metal or alloy including at least one of Hf. Said number 1 and number 2 electrode (151, 153) said metal or alloy is ITO (Indium-a Tin provided Oxide), IZO (Indium-a Zinc provided Oxide), IZTO (Indium-a Zinc-a Tin provided Oxide), IAZO (Indium-a Aluminum provided Zinc provided Oxide), IGZO (Indium-a Gallium-a Zinc provided Oxide), IGTO (Indium-a Gallium-a Tin provided Oxide), AZO (Aluminum provided Zinc provided Oxide), and a transparent conducting ATO (Antimony provided Tin provided Oxide) be a single or multi-layer.

7 also reference surface, the light emitting structure (of Figure 6 10) substrate (110) number from the wetting ability can be disclosed. For example said substrate (of Figure 6 10) by laser lift-off (LLO: Laser Lift Off) but the number can be volatile, limited to are not correct. Wherein, said laser lift-off process (LLO) (of Figure 6 10) the laser beam with a lower surface of said substrate, said substrate and said light emitting structure (of Figure 6 10) (110) as to process each other are disclosed.

Example embodiment substrate (of Figure 6 10) emitting structure (110) substrate for reparing over from number (of Figure 6 10) emitting structure (110) can be used to growth substrate. I.e., an example embodiment of substrate can be reduce by [...][...] number (of Figure 6 10).

Said number 1 conductive-type semiconductor layer (112) the top surface of the light extraction structure (112a) can be formed. For example said light extraction structure (112a) PEC (Photo Electro Chemical) is formed by etching process but, limited to are not correct. Said light extraction structure (112a) includes said light emitting structure (110) for extracting function outside of light including light extraction effects capable of.

Said light extraction structure (112a) whose cross section can be a bone having acid is formed, is not limited to, polygonal or having a curvature shape that allows for the disapproval. Said light extraction structure (112a) light has a light extraction efficiency can be improved. Said light extraction structure (112a) is said number 1 conductive-type semiconductor layer (112) can be disposed beneath the. Said light extraction structure (112a) but may have a height and width of 1 micro m hereinafter is, limited to are not correct. Said light extraction structure (112a) has a width of 1 nm to 1 micro m may have. Said light extraction structure (112a) has a height of 1 nm to 1 micro m may have. Said light extraction structure (112a) is random size may have. I.e., said light extraction structure (112a) may have a different height and width are selected.

Said light extraction structure (112a) is 500 nm or more patterns can be at least 10% of the whole. Said light extraction structure (112a) is 500 nm or more to further enhance light extraction efficiency can be at least 30% of the entire patterns.

Said light extraction structure (112a) PEC (Photo Electro Chemical) is formed by etching process but, limited to are not correct. Said light extraction structure (112a) includes said light emitting structure (110) for extracting function outside of light including light extraction effects capable of.

One embodiment example light emitting element (100) includes a number 1 conductive-type semiconductor layer (112) on said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the system having the general light emitting light extraction efficiency can be improved. In addition, one embodiment example light emitting device (100) includes a number 1 conductive-type semiconductor layer (112) on said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the upper crystalline which corresponds to the general light emitting device can be.

The reference also 8, resin layer (130) and substrate (101) is number 1 conductive-type semiconductor layer (112) can be formed on.

Said resin layer (130) is said number 1 conductive-type semiconductor layer (112) can be in direct contact with. Said resin layer (130) is said said number 1 conductive-type semiconductor layer (112) and said substrate (101) disposed between said substrate (101) can be adhesion function.

Said resin layer (130) is 70% or more may have permeability. Said resin layer (130) is 90% or more permeability may have. Said resin layer (130) is benzocyclobutene (BCB), SU provided 8, acrylic or organic material, inorganic material or combinations thereof such as SOG can.

Said resin layer (130) is 3 to 10 micro m thickness of micro m (130W) may have a. Said resin layer (130) thickness (130W) is said light extraction structure (112a) may be bigger than the height of. Said resin layer (130) thickness (130W) is said light extraction structure (112a) than the height of 3 can be twice as large. Said resin layer (130) thickness (130W) is less than 3 micro m when, said number 1 conductive-type semiconductor layer (112) light extraction structures (112a) substrate (101) of said contact light extraction structure (112a) can be damaged. Said resin layer (130) thickness (130W) is greater than 10 micro m when, said resin layer (130) is formed of a plate shape can be a decrease in functionality.

Said substrate (101) is 70% or more may have permeability. Said substrate (101) is 90% or more permeability may have. Sapphire (Al₂ O₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge or Ga₂ 0₃ Using at least one of can.

70% or more resin layer which has a light-emitting element of embodiment example (130) and substrate (101) can be including optical loss. The, embodiment example light emitting device (100) includes a light emitting efficiency is improved can be.

Embodiment example light emitting device (100) includes a random height and width of 1 micro m hereinafter light extraction structure (112a) at least one of the structure (110) including light extraction efficiency can be improved.

Example light emitting device embodiment (100) includes a number 1 conductive-type semiconductor layer (112) below said light extraction structure having height and width of 1 micro m hereinafter (112a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the upper crystalline which corresponds to the general light emitting device can be.

Example embodiment substrate (of Figure 6 10) emitting structure (110) substrate for reparing over from number (of Figure 6 10) emitting structure (110) can be used to growth substrate. I.e., an example embodiment of substrate can be reduce by [...][...] number (of Figure 6 10).

Figure 9 shows a light-emitting element according to another embodiment example shown in cross-section are disclosed.

As shown in fig. 9, for example a light-emitting element according to another embodiment (200) at the bottom and number 1 and number 2 pad (291, 293) be a flip chip type is disposed. A light-emitting element according to another embodiment example (200) light has a light extraction structures (212a) number 1 having conductive-type semiconductor layer (212), active layer (214) and number 2 conductive-type semiconductor layer (216) including a light emitting structure (210), light emitting structure disposed below line electrode layer (260), number 1 and number 2 electrode (251, 253) can be comprising. Insulating layer number 1 (271), insulating layer number 2 (273), number 1 connecting electrodes (281), loss number 2 (283), number 1 and number 2 pad (291, 293) number 1 to a configuration example of Figure 8 embodiment [...] also light-emitting device (100) technical features can be employed disclosed.

Insulating layer said number 1 (271) is said light emitting structure (210) can be disposed on. Insulating layer said number 1 (271) is said light emitting structure (210) can be protecting function. Insulating layer said number 1 (271) can be oxide or nitride. For example insulating layer said number 1 (271) is SiO₂ , Si_x O_y , Si₃ N₄ , Si_x N_y , SiO_x N_y , Al₂ O₃ , TiO₂ , AlN or similar can be at least one selected is selected.

Said number 1 and number 2 connecting electrodes (281, 283) said number 1 the insulating layer (271) exposed from the number 1 and number 2 electrode (251, 253) can be disposed on. Said number 1 and number 2 connecting electrodes (281, 283) is said number 1 and number 2 electrode (251, 253) can be disposed beneath the.

Said number 1 connecting electrodes (281) said number 1 the insulating layer (271) exposed from said number 1 electrode (151) can be electrically connected. Said number 1 connecting electrodes (281) is said number 1 electrode (151) can be in direct contact with.

Said number 2 connecting electrodes (283) said number 1 the insulating layer (271) exposed from said number 2 electrode (153) can be electrically connected. Said number 2 connecting electrodes (283) is said number 2 electrode (153) can be in direct contact with.

Said number 1 and number 2 connecting electrodes (281, 283) is Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, be a metal or alloy including at least one of Hf. Said number 1 and number 2 connecting electrodes (281, 283) said metal or alloy is ITO (Indium-a Tin provided Oxide), IZO (Indium-a Zinc provided Oxide), IZTO (Indium-a Zinc-a Tin provided Oxide), IAZO (Indium-a Aluminum provided Zinc provided Oxide), IGZO (Indium-a Gallium-a Zinc provided Oxide), IGTO (Indium-a Gallium-a Tin provided Oxide), AZO (Aluminum provided Zinc provided Oxide), and a transparent conducting ATO (Antimony provided Tin provided Oxide) be a single or multi-layer.

Said number 2 insulating layer (273) said number 1 the insulating layer (271), number 1 and number 2 connecting electrodes (281, 283) can be disposed on. Said number 2 insulating layer (273) silicon or such as epoxy resin in water adding heat-spreading number can be formed. Said heat spreader comprises a number Al, Cr, Si, Ti, Zn, Zr oxide single crystal having a substance such as, nitride, fluoride, sulfide of at least one material for example, can be a material including ceramic. Any number of heat-spreading said powder particles, granules, filler (filler), defined number can be added.

Said number 1 pad (291) is said number 1 connecting electrodes (281) can be electrically connected. Said number 1 pad (291) is said number 1 connecting electrodes (281) can be in direct contact with. Said number 1 pad (291) is said number 1 connecting electrodes (281) disposed on, said number 2 insulating layer (273) but lower extending, limited to are not correct. In addition, said number 1 pad (291) is said number 1 connecting electrodes (281) formed independently of but separate from the constrict, without limited, said number 1 pad (291) and number 1 connecting electrodes (281) integral be a. For example said number 1 pad (291) and number 1 connecting electrodes (281) is said number 1 electrode (251) can be integrally formed onto the process through.

Said number 2 pad (293) is said number 2 connecting electrodes (283) can be electrically connected. Said number 2 pad (291) is said number 2 connecting electrodes (283) can be in direct contact with. Said number 2 pad (293) is said number 2 connecting electrodes (283) is arranged on, said number 2 insulating layer (273) but lower extending, limited to are not correct. In addition, said number 2 pad (293) is said number 2 connecting electrodes (283) formed independently of but separate from the constrict, without limited, said number 2 pad (293) and number 2 connecting electrodes (283) integral be a. For example said number 2 pad (293) and number 2 connecting electrodes (283) is said number 2 electrode (253) can be integrally formed onto the process through.

Said number 1 and number 2 pad (291, 293) is Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, be a metal or alloy including at least one of Hf. Said number 1 and number 2 pad (291, 293) said metal or alloy is ITO (Indium-a Tin provided Oxide), IZO (Indium-a Zinc provided Oxide), IZTO (Indium-a Zinc-a Tin provided Oxide), IAZO (Indium-a Aluminum provided Zinc provided Oxide), IGZO (Indium-a Gallium-a Zinc provided Oxide), IGTO (Indium-a Gallium-a Tin provided Oxide), AZO (Aluminum provided Zinc provided Oxide), and a transparent conducting ATO (Antimony provided Tin provided Oxide) be a single or multi-layer.

Other embodiment example which has a light-emitting element of 70% or more resin layer (230) and substrate (201) can be including optical loss. The, other embodiment example light emitting device (200) having a luminous efficiency improved is capable of.

Embodiment example light emitting element (200) is random height and width of 1 micro m hereinafter light extraction structure (212a) at least one of the structure (210) including light extraction efficiency can be improved.

Example light emitting device embodiment (200) is number 1 conductive-type semiconductor layer (212) on said light extraction structure having height and width of 1 micro m hereinafter (212a) on sapphire substrate 1 including micro m constant light extraction structure exceeds the upper crystalline which corresponds to the general light emitting device can be.

Figure 10 shows a backlight unit dB shown example embodiment also are disclosed.

As shown in fig. 10, embodiment example liquid crystal display device (1100) comprises a liquid crystal display panel (1110), said liquid crystal display panel (1110) number [...] light backlight unit, guide panel (1180), top cover (1120) and [...] (1130) can be a.

Said liquid crystal display panel (1110) includes an upper substrate (1113) and lower substrate (1111) can be comprising. Said liquid crystal display panel (1110) is not shown but the drawing, said upper substrate (1113) lower substrate (1111) liquid crystal layer (not shown) can be between comprising, said lower substrate (1111) number [...] PCB (Printed Circuit Board, not shown) connected to drive a drive signal can be, can be polarizing sheet.

Said liquid crystal display panel (1110) which has a liquid crystal cells disposed in a matrix form the pixel, according to Image signal transmitted from the drive PCB by photoresist liquid crystal cells of a liquid crystal display to be coated.

Said lower substrate (1111) includes a plurality of gate lines and a plurality of data line can be arranged in a matrix, said thin film transistor in the crossing region of the gate line (Thin Film Transistor; TFT) can be arranged.

Said upper substrate (1113) but the color filter can be positioned, the pieces are not correct.

Said top cover (1120) is said liquid crystal display panel (1110) can be disposed on the top edge, said guide panel (1180) can be interlocked.

Said [...] (1130) be a structure upper surface is opened. Said [...] (1130) is said guide panel (1180) can be interlocked. For example said [thep cover (1130) the hook structure, screw driving structure or the like in said guide panel (180) can be interlocked.

Said guide panel (1180) further comprises a quadrangular form such as can be. Said guide panel (1180) is said liquid crystal display panel (1110), can be receiving support or a backlight unit. To this end said guide panel (1180) has a step structure, can be protruded structure and home structure.

Said backlight unit has a light guide (1140), light source unit, optical sheets (1150) and reflective sheet (1160) can be a.

Said light source unit circuit board (101) and, embodiment example light emitting device (100) can be a. Said light-emitting device (100) is also 1 to be a light-emitting device of Figure 9.

Example embodiment 1 by the backlight unit includes a light-emitting element (100) is a light guide plate (1140) implementing an upper part can be incident on the light guide plate

Figure 11 shows a example embodiment shown a lighting device sensors mounted thereon also are disclosed.

As shown in fig. 11, for example illumination device according to embodiment includes a cover (2100), light source module (2200), heat-dissipating bodies (2400), power study number (2600), an inner case (2700), socket (2800) can be comprising. In addition, illumination device according to example embodiment includes a member (2300) on holder (2500) further includes one or more can be. Said light source module (2200) comprising a dissection can be for example according to the embodiment.

For example, said cover (2100) includes a bulb (bulb) or a hemispherical shaped, and is hollow, a portion opened shape 1308. ball number. Said cover (2100) includes said light source module (2200) and can be optically coupled. For example, said cover (2100) includes said light source module (2200) laminated ball number from diffusing, scattering or the excitation capable of. Said cover (2100) is a kind of optical member be a. Said cover (2100) includes said heat-dissipating bodies (2400) can be coupled to. Said cover (2100) includes said heat-dissipating bodies (2400) which engages with an engagement portion may have.

Said cover (2100) of opal materials can be coated on the inner. Light can be opal coatings include diffusion material. Said cover (2100) of surface roughness on the inner surface of said cover (2100) is greater than the surface roughness of the outer surface of can be. This said light source module (2200) emit light from scattering and diffusion by sufficiently for are disclosed.

Said cover (2100) is made out of glass (glass), plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC) and the like disclosed. Wherein, the polycarbonate light resistance, heat resistance, strength up plots. Said cover (2100) in said light source module is also (2200) to be viewed and can be transparent, can be opaque. Said cover (2100) (blow) the blower can be formed through molding.

Said light source module (2200) is said heat-dissipating bodies (2400) can be arranged on the opposite side of. The, said light source module (2200) heat from the heat-dissipating bodies (2400) to conductive with each other. Said light source module (2200) to the light source unit (2210), connecting plate (2230), connector (2250) can be a.

Said member (2300) is said heat-dissipating bodies (2400) installed on the upper surface of, a plurality of light source unit (2210) and connector (2250) guide hole in which it is embedded (2310) for freezers and refrigerators. Said guide hole (2310) is said light source unit (2210) device and connector (2250) corresponding thereto.

Said member (2300) coated surface of the light reflection of the material or be a. For example, said member (2300) be a surface of the white paint applied or coated. the member (2300) is said cover (2100) by being reflected by the inner surface of said light source module (2200) returned direction from said back light cover (2100) toward the direction of a substrate. The, light-capable of illumination device according to example embodiment.

Said member (2300) is further provided insulating material as can be. Said light source module (2200) for cylinder (2230) can be an electric conductive material. The, said heat-dissipating bodies (2400) on said connecting plate (2230) electrical contact is made between can be. Said member (2300) is composed of an insulating material said connecting plate (2230) on said heat-dissipating bodies (2400) can be a short preventing electrical. Said heat-dissipating bodies (2400) is said light source module (2200) heat from said power study number (2600) transmitted to the heat from radiating the substrate.

Said holder (2500) inner case (2700) an insulation part of (2710) of container (2719) and a movable conductive surface. The, said inner case (2700) of said insulation (2710) number that are received said power study (2600) serving as a substrate. Said holder (2500) guide projections (2510) has. Said guide projections (2510) number is said power study (2600) of projections (2610) is has a hole therethrough.

Said power study number (2600) converts an electrical signal from said light source module is also for treating or ball number it received (2200) number to [...] substrate. Said power study number (2600) is said inner case (2700) of container (2719) is accommodated, said holder (2500) by said inner case (2700) of enclosed within substrate. Said power study number (2600) includes a projection (2610), guide (2630), base (2650), extension (2670) can be a.

Said guide (2630) is said base (2650) on one side of shape and an outer shape. Said guide (2630) is said holder (2500) can be inserted. Said base (2650) on one side of a plurality of component can be. For example a multi-component, which AC power to a DC power source device converting DC converter integrated circuit number ball, said light source module (2200) driving of the driving chip number plower, said light source module (2200) for protecting (ElectroStatic discharge) ESD protection element defined with respect to the like but not more.

Said extension (2670) is said base (2650) other shape and an outer shape on one side. Said extension (2670) is said inner case (2700) connection (2750) inserting into, an electric signal from the outside number ball receiver. For example, said extension (2670) is said inner case (2700) connection (2750) equal to or smaller than the width of the ball number can be disclosed. Said extension (2670) "+ wire" and "wire -" is electrically connected at one end of and, "+ wire" and "wire -" other one end comprises a socket (2800) can be electrically connected.

Light-emitting device package according to example embodiment (110) as well as said display device includes a lighting unit, indicating device, lamp, street, AC device, vehicle display device, smart clock applied to limited to but are not correct.

In the embodiment above are described features, structure, at least one effect included in the embodiment, in the embodiment of specific confined only to are not correct. Further, in the embodiment each exemplified feature, structure, in the embodiment having the usual knowledge field effect belong in the embodiment that has been modified by other embodiment combination even for pivotably. The related content is translated in the embodiment of this combination as the bottom range will be interpreted.

In the embodiment example in the embodiment described above is but only about only defining but is, in the embodiment belongs if the inputted from deviating from a person with skill in the art in the field of biosensors properties in the embodiment not illustrated or more deflection of the various applications may be know are disclosed. For example, each component can be deformed embodiment specifically in the embodiment shown are disclosed. Such distortion and applications and related setting range of differences in the embodiment of the appended in the claims will be interpreted.