DISPLAY DEVICE AND LIGHTING DEVICE

The present invention refers to conversion may have various in the embodiment can apply various bar, in the embodiment example are specific detailed description and drawing the broadcast receiver. The effect of the invention and features, achieving the drawing method in the embodiment and an electronic component connected to the reference surface with specifically carry activitycopyright will. In the embodiment in the present invention refers to hereinafter however are limited to rather than the disclosure can be implemented in various forms.

Hereinafter, with reference to the attached drawing of the present invention in the embodiment for which is a detailed, with reference to the drawing described when determining the same components or corresponding local impart the drawing code description dispensed the on-sensors other.

In the embodiment of in hereinafter, number 1, number 2 the term limiting meaning rather than one component such as other components used to distinguish an object. In addition, it is apparent that a single representation of the differently in order not providing language translators, comprising plurality of representation.

On the other hand, comprising or branches disclosed such as term articles feature specification, meaning that the presence or components and, one or more other features or components may be added the possibility number pre-times are not correct. In addition, film, region, such as component parts which are "on" or "on" when it, "directly on" or "directly on" any other portions of the when as well as, other film intermediate, region, components and the like comprising interposed also be the case.

In descriptions or a reduced and apparatus for facilitating the drawing near the components can be. For example, size and thickness of each configuration exhibited drawing representing a virtual path identifier arbitrarily for facilitating the descriptor, not limited to the present invention are not necessarily shown.

X axis, y z shaft and convert the shaft axis on cells without limit, can be interpreted in a broad sense including same. For example, x axis, y shaft and z axis orthogonal to one another section, disapproval defines different direction non-orthogonal each other.

In the embodiment implementing a self-propelled when any specific process performed in a different order described disapproval. For example, two process may be performed substantially concurrently continuously described, described herein can be performed in the reverse order.

Figure 1 shows a display device of the present invention also one in the embodiment according to (10) to determine cross-section shown are disclosed.

The reference also 1, display device (10) includes a display unit (110) and driver (120) can be a. Display unit (110) substrate comprising a plurality of pixels disposed in a matrix form on (P1, P2) can be. Driver (120) comprises a plurality of pixels (P1, P2) scan signal and data lines connected to the scan line scan driver applying data driver applying data signals can be. Driver (120) comprises a plurality of pixels (P1, P2) are arranged display unit (110) [...] fixes the substrate can be the n-channel TFT. Driver (120) of the integrated circuit chip is shaped in the form of color (110) is formed or mounted directly to the substrate, a flexible printed circuit film (flexible printed circuit film) in the form of TCP (tape carrier package) is attached to or mounted on a substrate, formed directly on the substrate disapproval.

The pixel number 1 (P1) and (P2) plural pixels (P1, P2) can be a pixel number 2. According to the in the embodiment, the pixel number 1 (P1) is made to emit light the number 1, number 2 (P2) is pixel number 1 number 2 on the side opposite the light emitting surface can be. I.e., pixel (P1) has a front emissive pixel and number 1, number 2 (P2) can be understand the emissive pixel to pixel rear view. Display unit (110) number 1 (P1) and (P2) is a couple of pixels on pixel number 2 can be drawn.

1 2a is also shown in plane view and also the signals X portion as shown, is also shown in display device also 2a 2b (10A) A provided A a ' cross-sectional drawing taken along a line as shown determine are disclosed.

Also 2a and 2b also reference the together, one in the embodiment according to display device of the present invention (10A) (A1) (A2) number 1 and number 2 region including a region includes a substrate (100), substrate (100) which is arranged on the light emitting diode (LED, 300) number 1 and substrate (100) area (A1) and (A2) of number 1 number 2 region located over lens (600) contact with each other.

Substrate (100) is glass material, metal material, or PET (Polyethylen terephthalate), PEN (Polyethylen naphthalate), polyimide (Polyimide) materials such as plastic, be a separated from each other when a wide variety of material. This material is formed like a (100) substrate having the ridge [...] characteristics may be, a substrate having flexible characteristics disapproval.

In the embodiment according to the loess, substrate (100) area (A1) and (A2) can be the number 1 number 2 region comprising. The area (A1) can be-light the number 1, number 2 region (A2) can be the transparency. (A1) and (A2) is number 2 number 1 region-light is light-transmitting region it may arise, substrate (100) itself may be light transmissible or translucent formed, substrate (100) is disposed all sorts layers and elements, such layers and elements substrate (100) area (A1) to a corresponding region of number 1 indicates a light transmissible, number 2 region (A2) corresponding to the light-transmitting region formed to indicate disapproval.

In addition, light transmissible or translucent that he was a perfect light or blocked, as well as perfect passed, (A1) (A2) is over the region number 1 number 2 region (100) light-amount can be relatively more meaning.

The light emitting diode (LED, 300) number 1 and number 1 number 1 pixel (P1) light emitting diode (300) can be connected to the pixel circuit. Thin film transistor (TFT) comprising at least one pixel circuit and at least one capacitor can be. Scan and data lines crossing each other pixel circuit has a drain connected thereto. In one thin film transistor (TFT) also 2b was shown only.

Substrate (100) on the buffer layer (111) can be with, buffer layer (111) thin film transistor (TFT) can be with on. Buffer layer (111) substrate (100) through penetration of the impure element is interrupted, and planarizing the surface executes silicon nitride (SiN_x ) And/or silicon oxide (SiO_x ) To the hydrophobic such as monolayer or more layers can be formed.

Thin film transistor (TFT) comprises an active layer (210), gate electrode (220), a source electrode (230a) and a drain electrode (230b) comprises. Active layer (210) can be a semiconductor material, a source region, drain region and has a channel region between the source to the drain region.

Gate electrode (220) has a channel region corresponds to a active layer (210) in a transfer liquid. A source electrode (230a) and a drain electrode (230b) active layer (210) source to the drain region of each electrically connected thereto. Active layer (210) and a floating gate electrode (220) as a gate insulation film formed between the insulating layer insulating layer number 1 (113) disposed thereon. Gate electrode (220) point (230a)/drain electrode (230b) between the number 2 as an interlaminar insulating film insulating layer (115) disposed thereon. A source electrode (230a)/drain electrode (230b) number 3 as a planarization film on the insulating layer (117) disposed thereon. Number 2 insulating layer (115) and number 3 insulating layer (117) organic insulating material, or the insulating layer can be formed, connected to a alternating insulation material may be filled with the insulating material organic.

In the embodiment of the present invention in one, buffer layer (111), insulating layer number 1 (113), number 2 insulating layer (115) and number 3 insulating layer (117) is transparent or translucent material having light-transmitting property can be.

2b (TFT) drain gate electrode disposed on the top also includes a top gate type (top gate type) is exemplified but, the present invention refers to the number not one, gate electrode is arranged in a lower layer disapproval.

In addition according to the in the embodiment, thin film transistor (TFT) substrate (100) of number 1 region (A1) can be disposed on. Substrate (100) number 1 region (A1) of the light transmissible region, such as thin film transistor (TFT) the substrate may (100) of number 1 region (A1) can be disposed. This in other words, thin film transistor (TFT) substrate including the elements are (100) of number 2 area (A2) is not be disposed. Substrate (100) number 2 area (A2) of the translucent region, substrate (100) of number 2 (A2) in order to progress the direction that the light permeable region light elements are formed not able to inhibit the translucent light preferably.

Insulating layer number 3 (117) and a bank layer on the pixel region (400) can be disposed. Bank layer (400) substrate (100) corresponding to the number 1 number 1 region (A1) on opening (400a) and substrate (100) corresponding to the opening area (A2) on number 2 number 2 (400b) can be a. Bank layer (400) opening of number 1 (400a) number 1 is light emitting diode (300) can be located. While bank layer (400) opening of number 2 (400b) number 1 is light emitting diode (300) is not arranged. Bank layer (400) number 1 the height of the light emitting diode (300) can be determined by the height of the field of view angle. In addition number 1 opening (400a) and number 2 opening (400b) (width) of the display device (10) resolution, pixel density can be determined by.

In one in the embodiment, bank layer (400) number 1 than the height of light emitting diode (300) can be greater height. Opening 2a is also number 1 (400a) and number 2 opening (400b) shown is rectangular for example without intending to be limited, of the present invention in the embodiment are not limited to, opening number 1 (400a) and number 2 opening (400b) is polygonal, rectangular, circular, conical, elliptical, such as triangle may have a variety of shapes.

Bank layer (400) part of the electrode number 2 (530) and electrically connected to the conductive layer (550) disposed thereon. Or shown but not, without performing the conductive layer, electrode number 2 (530) in which a common electrode common to pixel (P) (100) formed throughout the disapproval. Conductive layer (550) can be arranged in the direction parallel to the data line or scan line.

Bank layer (400) absorbing materials and at least a portion of the light, or light reflective material, or light scattering material can be. Bank layer (400) (e.g., 380 nm to 750 nm light wavelength range) visible light for translucent or opaque insulating material can be. Bank layer (400) polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone, polyvinyl butyral, polyphenylene ether, polyamide, polyether-imide, a norbornene (norbornene system) resin, methacrylic resin, cyclic polyolefin such as thermoplastic resin, epoxy resin, phenol resin, urethane resin, acrylic resin, vinyl ester resin, imide resin, urethane resin, urea (urea) resin, melamine resin (melamine) thermosetting resin, or polystyrene, polyacrylonitrile, but organic resultant such as polycarbonate, limited to are not correct. Bank layer (400) is SiOx, SiNx, SiNxOy, AlOx, TiOx, TaOx, ZnOx of inorganic oxide, inorganic-dry but may be formed of the insulating layer, the pieces are not correct.

In one in the embodiment, bank layer (400) black matrix (black matrix) can be wear resistant material such as opaque material. Insulating black matrix materials include organic resin, glass paste (glass paste) and black pigment including resin or paste, metal particles, such as nickel, aluminum, molybdenum and alloys thereof, metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride) can be like. In the embodiment in other bank layer (400) of the Bragg reflector (DBR) a dispersing agent having a often reflection factor to form a mirror reflector can be.

Bank layer (400) opening of number 1 (400a) number 1 is light emitting diode (300) can be arranged. Number 1 light emitting diode (300) includes a micro LED implementation being. The size of 1 to 100 micro m can be used in reading the but, not of the present invention in the embodiment are the number one, or greater than a smaller number 1 can be applied to a light emitting diode. Number 1 light emitting diode (300) is on a wafer pickup (pick up) by individually or a plurality transfer substrate (100) is transferred to a substrate by (100) opening of number 1 (400a) can be received.

In the embodiment in one, number 1 light emitting diode (300) of the substrate (100) area (A1) of number 1 on the bank layer (400) and number 1 electrode (510) followed by a number 1 region (A1) number 1 on opening (400a) can be received. In other in the embodiment, conductive layer (550) after additional, number 1 light emitting diode (300) substrate (100) by number 1 region (A1) transferred to the number 1 on opening (400a) can be received. Number 1 light emitting diode (300) includes a red, green, blue, white LED or implementation being UV LED.

Number 1 light emitting diode (300) is p a-n diode (380), number 1 contact electrode (310) and number 2 contact electrode (390) can be comprising. Number 1 contact electrode (310) and/or number 2 contact electrode (390) comprises at least one layer can be, metal, various conductive oxide and conductive polymers can be formed from thermally conductive material. Number 1 contact electrode (310) and number 2 contact electrode (390) reflective layer, e.g., the (silver) layer can be optionally include. Contact electrode number 1 (310) is electrode number 1 (510) and electrically connected with, contact electrode number 2 (390) is number 2 electrode (530) electrically connected thereto. P a-n diode (380) at the bottom of p - doped layer (330), one or more quantum well layer (350) and time n - doped layer (370) can be comprising. In other in the embodiment, upper doped layer (370) and the p - doped layer, lower doped layer (330) is n - doped layer can be. P a-n diode (380) is straight sidewall, or in top down or under the portion may have a tapered sidewall.

Number 1 electrode (510) and the (semi) transparent electrode or reflective around the center, can be one or more layers. For example, number 1 electrode (510) aluminum, molybdenum, titanium, titanium [theng the [su it shook off, is, or gold, or such as a metal can. Electrode number 1 (510) is ITO, IZO, ZnO, or In₂ O₃ A transparent conductive oxide (TCO), carbon nanotube films or transparent conductive such as a transparent conductive layer including conductive material, including a reflector layer and can be. In one in the embodiment, electrode number 1 (510) between the upper and lower layer and the transparent conductive layer including 3 be a reflective layer.

Number 2 electrode (530) can be around the camera. For example, number 2 electrode (530) aforementioned transparent conductive material can be formed, Ag, Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg and CaAg can be selected from one or more material.

In one in the embodiment, number 2 electrode (530) allows the conductive layer (100) is performed on the common electrode, substrate (100) of number 2 region (A2) taking into account the number 2 electrode plates (530) preferably formed of a transparent electrode.

Passivation layer (520) a bank layer (400) is arranged on the opening number 1 (400a) and number 2 opening (400b) can be embedded. Passivation layer (520) opening the number 1 (400a) number 1 in light emitting diode (300) can be surrounding. Passivation layer (520) a bank layer (400) number 1 and light emitting diode (300) by filling a space between, number 1 opening (400a) and number 1 electrode (510) covering the substrate. The passivation layer (520) opening the number 1 (400a) and number 2 opening (400b) to fill in the space in a lens by (600) is formed to allow lower surface can be flat.

Passivation layer (520) having light-transmitting property can be the organic insulating material. For example, passivation layer (520) the acrylic, poly (methyl methacrylate) (PMMA), benzo cyclobutene (BCB), polyimide, acrylate, epoxy and polyester and the like but, limited to are not correct. Passivation layer (520) is number 1 light emitting diode (300) of, for example number 2 contact electrode (390) not cover formed height, number 2 contact electrode (390) are exposed. Passivation layer (520) number 1 upper light emitting diode (300) contact electrode exposed number 2 (390) and conductive layer (550) number 2 electrode electrically connected (530) formed therein.

In the example shown as but also vertical micro LED 2b, of the present invention in the embodiment is not limited to, number 1 and number 2 contact electrode disposed towards the flip type micro LED such contact, horizontal micro LED etc. disclosed. In this case, the position of the number 1 and number 2 electrode number 1 number 2 can be disposed at a position corresponding to contact electrode and contact electrode.

Passivation layer (520) on lens (600) can be arranged. Lens (600) number 1 includes a light emitting diode (300) so as to cover the substrate (100) of number 1 region (A1) and (A2) can be located over a number 2 region. Lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) located over it that, lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) as well as covering full, lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) covering at least a portion of means disapproval.

Lens (600) is may have an elliptical shape. The elliptical shape can be understood to provide the means by which a direction won shape formed on the mesa structure. By the (600) number 1 as part of the surface of light emitting diode (300) through the substrate (100) with a surface of an oval shape of part of the virtual perpendicular can be understood to have. In lens also 2a (600) having an elliptical shape cross-section and a 16 X-a Y axis, the lens also 2b (600) X-a Z axis having an elliptical shape whose cross section 16 a is also shown. The present invention has the only this limited to, lens (600) number 1 as part of the surface of light emitting diode (300) through the substrate (100) with a surface of a shape of a part of the virtual perpendicular to the elliptical motion through the return network, lens (600) the overall shape light extraction amount can be polarity or direction to it.

In the in the embodiment, lens (600) (A1) is located with reference to the central portion of one side region and number 1, number 2 (A2) can be an exclusive area is located. Lens (600) is completely oval when the lens (600) the center section of the lens (600) but understood to [...] intrusiveness of, lens (600) is completely oval case lens (600) can be understood to focus in the area between the center section of the focus [...] number 1 number 2.

The aforementioned elliptical as shown with having the shape of lens (600) is number 1 number 2 may have the focus focus. The focus when optically access number 1 number 2 focus is of oval, elliptic elements are mirror facets corresponding ellipsoid reflected light and propagation in focal from reaching the focus before the other. In which direction to result even at a light propagation are the same.

In the embodiment if lens (600) is number 1 number 1 of focus position corresponding to the light emitting diode (300) can be located. In addition lens (600) of number 2 focus is substrate (100) corresponding to region of number 2 (A2) can be positioned. By the (600) number 1 number 1 is located at the focus of a light emitting diode (300) basically have light emitted in the emission direction or straight light emitting, the portion lens (600) by being reflected by the surface of the lens (600) focused position number 2 of substrate (100) number 2 area (A2) of the light-emitting surface. Through this light reflecting, substrate (100) number 1 (A1) of the anterior light emitting region as a light, substrate (100) area (A2) is equal to light as a light rear view of number 2.

Impurity display device in order to implementing one-way light panels laser emissive display device arranged rear-section. In the embodiment of the present invention the aforementioned display device such as one in a cylinder, a single-panel separator process from the computer display device.

Figure 3 shows a display device of the present invention also in the embodiment according to another (10B) to determine cross-section shown are disclosed.

Also 2a and also the reference 3 together, one in the embodiment according to display device of the present invention (10B) (A1) (A2) number 1 and number 2 region including a region includes a substrate (100), substrate (100) are disposed on one side a light emitting diode (LED, 300) number 1, substrate (100) area (A1) and (A2) of number 1 number 2 region located over lens (600) and substrate (100) surface disposed on the other side of the 440 (700) with each other.

In the embodiment according to the display device (10B) in 440 (700) 2a and 2b a number [...] also components are also taught display device (10A) identical to the bar, without the aforementioned display device redundant described (10A) description of the aided as follows. In hereinafter 440 (700) to explain about less than 1000.

Substrate (100) is the number 1 (100a) and the number 1 (100a) on the side opposite the interactivity number 2 (100b) can be comprising. For example substrate (100) of the number 1 (100a) is number 1 light emitting diode (300) and lens (600) is placed which may be the, substrate (100) of the number 2 (100b) is the number 1 (100a) can be opposite side of a face of the table.

Substrate (100) of the number 1 (100a) on the aforementioned as well as, various insulators (111, 113, 115, 117) number 1 including light emitting diode (300) and lens (600) can be located.

Substrate (100) of the number 2 (100b) on 440 (700) can be disposed. 440 (700) inkjet printing, screen printing, lamination, spin coating, sputtering or CVD (chemical vapor deosition) such as can be formed using. For example, fine particles including medium substrate (100) of the number 2 (100b) coating on, thermosetting and/or ultraviolet curing by cured through 440 (700) can be formed.

440 (700) smoothing function number 1 with light emitting diode (300) covered on electron emission light extraction efficiency sb2te3. 440 (700) such as a transparent binder (binder) can be fine particles dispersed transparent medium for light spreading. The microparticles may have to be several tens of nm size of micro m. Binder acrylic, urethane, epoxy resin or the like can be transparent material. The microparticles a transparent organic particles or inorganic particles can be. Organic particles are methyl methacrylate, acrylic acid, methacrylic acid, hydroxy ethyl meta [khu relay [thu, hydroxy [...], acrylamide, maul tyrol acryl amide, writing city [til meta [khu relay [thu, ethyl acrylate, isobutyl acrylate, roh the butyl arc relay [thu which rolls up, 2 - ethyl [...] homopolymer or copolymer of acrylic particles polyethylene, polystyrene, olefinic particles and acrylic and polyolefin copolymer of polypropylene homopolymer particles and particles of different types grown over a monomer of covering can be obtained multilayer multi-component particles. The inorganic particles comprise silicon oxide, aluminum oxide, titanium oxide, zirconium oxide and comprising magnesium fluoride etc. can be.

1 4a is also shown in plane view and also the signals X portion as shown, in the embodiment according to another display device of the present invention is also 4b (10C) C-a C a ' cross-sectional drawing taken along a line as shown determine are disclosed.

The reference 4a and 4b together may also, in the embodiment according to one of the present invention display device (10C) (A1) (A2) number 1 and number 2 region including a region includes a substrate (100), substrate (100) are disposed on one side a light emitting diode (LED, 300) number 1 and substrate (100) area (A1) and (A2) of number 1 number 2 region located over part of lens (600) contact with each other.

In the embodiment according to the display device (10C) in lens (600) arrangements of the aforementioned display device (10A) difference on flow tides. Thin film transistor (TFT) and number 1 in addition to light emitting diode (300) components of the display device 2a and 2b also such as also described (10A) identical to the bar, without the aforementioned display device redundant described (10A) description of the aided as follows.

Substrate (100) area (A1) and (A2) can be the number 1 number 2 region comprising. The area (A1) can be-light the number 1, number 2 region (A2) can be the transparency. (A1) and (A2) is number 2 number 1 region-light is light-transmitting region it may arise, substrate (100) itself may be light transmissible or translucent formed, substrate (100) is disposed all sorts layers and elements, such layers and elements substrate (100) area (A1) to a corresponding region of number 1 indicates a light transmissible, number 2 region (A2) corresponding to the light-transmitting region formed to indicate disapproval.

In addition, light transmissible or translucent that he was a perfect light or blocked, as well as perfect passed, (A1) (A2) is over the region number 1 number 2 region (100) light-amount can be relatively more meaning.

In the in the embodiment, substrate (100) of the number 2 and number 2 - 2 region (A2) comprising number 2 - 1 region (A2 provided 1) area (A2 provided 2) can be. Also 4a and 4b also-in (100) (A1) (A2) number 1 number 2 region of wider area of region is shown but, are not necessarily limited to the present invention are not correct. Number 1 and number 2 region (A1) (A2) region of the area of one size frontlit region, rear view of various light emitting region can be deformed in accordance with a transmission region.

Lens (600) of the substrate (100) of number 1 and number 2 - 1 (A1) (A2 provided 1) region region covering disclosed. Substrate (100) of the number 1 number 1 region (A1) light emitting diode (300) is made to emit light transmitted in the anterior, substrate (100) of the number 1 number 2 - 1 region (A2 provided 1) light emitting diode (300) lens part of light emitted in (600) rear view light reflected in the other. The lens (600) area is not substrate (100) is formed of translucent display device number 2 - 2 region (A2 provided 2) (10C) can be serves in transparency. The substrate (100) of the number 2 - 2 region (A2 provided 2) utilizing laser light can be implementing a transparent display device.

1 5a is also shown in plane view and also the signals X portion as shown, in the embodiment according to another display device of the present invention is also 5b (10D) D provided D a ' cross-sectional drawing taken along a line as shown determine are disclosed.

Also 5a and 5b also reference the together, one in the embodiment according to display device of the present invention (10D) (A1) (A2) number 1 and number 2 region including a region includes a substrate (100), substrate (100) are disposed on one side a light emitting diode (LED, 300R) number 1, light emitting diode (LED, 300G) number 2 and substrate (100) area (A1) and (A2) of number 1 number 2 region located over part of lens (600) contact with each other.

In the embodiment according to the display device (10D) in one (100) number 1 region (A1) of a plurality of light-emitting diodes (300R, 300G, 300B) is combined with each other. I.e., substrate (100) of number 1 region (A1) and (A2) number 2 region over the lens (600) with, number 1 region (A1) on the plurality of light emitting diodes (300R, 300G, 300B) can be understood to disposed. In descriptions also 5b [...] substrate (100) area (A1) of number 1 on a plurality of pixel electrodes (510R, 510G, 510B) is disposed, the plurality of pixel electrodes (510R, 510G, 510B) a plurality of light-emitting diodes (300R, 300G, 300B) are respectively arranged DMB shown but, also 2b such as substrate (100) and a plurality of thin film transistors is disposed all sorts layers, said plurality of pixel electrodes (510R, 510G, 510B) the plurality of thin film transistors arranged to be electrically connected to disapproval. The substrate (100) and a plurality of pixel electrodes (510R, 510G, 510B) disposed between the various layers and the description of the present invention relates to thin film transistors also 2b nightglow substrate.

Substrate (100) area (A1) and (A2) can be the number 1 number 2 region comprising. The area (A1) can be-light the number 1, number 2 region (A2) can be the transparency. (A1) and (A2) is number 2 number 1 region-light is light-transmitting region it may arise, substrate (100) itself may be light transmissible or translucent formed, substrate (100) is disposed all sorts layers and elements, such layers and elements substrate (100) area (A1) to a corresponding region of number 1 indicates a light transmissible, number 2 (A2) represent a region corresponding to the light-transmitting region disapproval.

Substrate (100) area (A1) of number 1 number 1 on light emitting diode (300R), number 2 light emitting diode (300G) and number 3 light emitting diode (300B) can be arranged. In this case number 1 light emitting diode (300R) is red wavelengths of light emission, light emitting diode number 2 (300G) is green wavelengths of light emission, light emitting diode number 3 (300B) is can be emit the light of the blue wavelength. On the other hand also 5a and 5b also-in (100) area (A1) of number 1 on each R, G, B organic electroluminescence device 3 of light-emitting diodes (300R, 300G, 300B) but is shown disposed, substrate (100) of number 1 region (A1) can be disposed on light-emitting diodes of at least 2. Not shown but, in the embodiment other substrate (100) area (A1) of number 1 number 4 (not shown) emitting white light emitting diode is further disposed on light of a wavelength can be.

In one light-emitting diode is arranged in advance of the lens while in the embodiment, display device also 5b (10D) in lens (600) within a light-emitting diodes are positioned such that they point in both disclosed. I.e., while in the embodiment are disposed in advance of each respective sub pixels lens, display device also 5b (10D) in lens (600) disposed at least 2 including one or more of first pixel regions can be understood to. Through lens (600) can be effective as well as on the second stage of the process, R, G, B light emitting white light can be simultaneously by sealing when implementing.

Until now display device described but mainly only, not the limited to this the present invention. For example the aforementioned display device having a structure that the same illumination device of the present invention also range will.

Figure 6 shows a lighting device of the present invention also one in the embodiment according to (20) as shown in cross-section to determine are disclosed.

6 also reference surface, lighting device (20) includes illumination unit (130) can be a. The illumination sections (130) of the substrate (100) disposed in a matrix form on a plurality of the light emitting unit comprising (U1, U2) can be. The plurality of light emitting portions (U1, U2) number 1 and number 2 (U1) (U2) can be a light-emitting unit including a light-emitting unit. According to the in the embodiment, a light-emitting unit (U1) is the number 1 number 1 (100a) is made to emit light, a light-emitting unit (U2) is the number 1 number 2 (100a) on the side opposite the number 2 (100b) can be made to emit light. I.e., a light-emitting unit (U1) comprises a front face emissive pixel and number 1, number 2 (U2) to the light emitting unit can be understand emissive pixel rear view. The illumination sections (130) number 1 and number 2 (U1) (U2) on the light emitting unit can be used for a couple of the light emitting unit.

7a is also shown in the signals as shown in plane view and also 6 X portion, an illumination device is also shown in 7b also 7a (20A) A provided A a ' cross-sectional drawing taken along a line as shown determine are disclosed.

Also 7a and 7b also reference the together, one in the embodiment according to of the present invention lighting device (20A) (A1) (A2) number 1 and number 2 region including a region includes a substrate (100), substrate (100) which is arranged on the light emitting diode (LED, 300) and substrate (100) area (A1) and (A2) of number 1 number 2 region located over lens (600) contact with each other.

Substrate (100) is glass material, metal material, or PET (Polyethylen terephthalate), PEN (Polyethylen naphthalate), polyimide (Polyimide) materials such as plastic, be a separated from each other when a wide variety of material. This material is formed like a (100) substrate having the ridge [...] characteristics may be, a substrate having flexible characteristics disapproval.

In the embodiment according to the loess, substrate (100) area (A1) and (A2) can be the number 1 number 2 region comprising. The area (A1) can be-light the number 1, number 2 region (A2) can be the transparency. (A1) and (A2) is number 2 number 1 region-light is light-transmitting region it may arise, substrate (100) itself may be light transmissible or translucent formed, substrate (100) is disposed all sorts layers and elements, such layers and elements substrate (100) area (A1) to a corresponding region of number 1 indicates a light transmissible, number 2 region (A2) corresponding to the light-transmitting region formed to indicate disapproval.

In addition, light transmissible or translucent that he was a perfect light or blocked, as well as perfect passed, (A1) (A2) is over the region number 1 number 2 region (100) light-amount can be relatively more meaning.

A light-emitting unit includes a light emitting diode (LED, 300) number 1 (U1) and light emitting diode (300) can be connected to the circuit. Thin film transistor (TFT) and at least one capacitor comprises at least one a can. Scan and data lines crossing each other circuit respectively connected thereto. In one thin film transistor (TFT) 7b only was also shown.

Substrate (100) on the buffer layer (111) can be with, buffer layer (111) thin film transistor (TFT) can be with on. Buffer layer (111) substrate (100) through penetration of the impure element is interrupted, and planarizing the surface executes silicon nitride (SiN_x ) And/or silicon oxide (SiO_x ) To the hydrophobic such as monolayer or more layers can be formed.

Thin film transistor (TFT) comprises an active layer (210), gate electrode (220), a source electrode (230a) and a drain electrode (230b) comprises. Active layer (210) can be a semiconductor material, a source region, drain region and has a channel region between the source to the drain region.

Gate electrode (220) has a channel region corresponds to a active layer (210) in a transfer liquid. A source electrode (230a) and a drain electrode (230b) active layer (210) source to the drain region of each electrically connected thereto. Active layer (210) and a floating gate electrode (220) as a gate insulation film formed between the insulating layer insulating layer number 1 (113) disposed thereon. Gate electrode (220) point (230a)/drain electrode (230b) between the number 2 as an interlaminar insulating film insulating layer (115) disposed thereon. A source electrode (230a)/drain electrode (230b) number 3 as a planarization film on the insulating layer (117) disposed thereon. Number 2 insulating layer (115) and number 3 insulating layer (117) organic insulating material, or the insulating layer can be formed, connected to a alternating insulation material may be filled with the insulating material organic.

7b (TFT) drain gate electrode disposed on the top also includes a top gate type (top gate type) is exemplified but, the present invention refers to the number not one, gate electrode is arranged in a lower layer disapproval.

In addition according to the in the embodiment, thin film transistor (TFT) substrate (100) of number 1 region (A1) can be disposed on. Substrate (100) number 1 region (A1) of the light transmissible region, such as thin film transistor (TFT) the substrate may (100) of number 1 region (A1) can be disposed. This in other words, thin film transistor (TFT) substrate including the elements are (100) of number 2 area (A2) is not be disposed. Substrate (100) number 2 area (A2) of the translucent region, substrate (100) of number 2 (A2) in order to progress the direction that the light permeable region light elements are formed not able to inhibit the translucent light preferably.

Insulating layer number 3 (117) of the light-emitting region on the bank layer (400) can be disposed. Bank layer (400) substrate (100) corresponding to the number 1 number 1 region (A1) on opening (400a) and substrate (100) corresponding to the opening area (A2) on number 2 number 2 (400b) can be a. Bank layer (400) opening of number 1 (400a) of the light-emitting diode can be located. While bank layer (400) opening of number 2 (400b) unit is not disposed. Bank layer (400) can be determined by the height of the light emitting diode for adjusting height and viewing angle. In addition number 1 opening (400a) and number 2 opening (400b) (width) of the display device (10) resolution, pixel density can be determined by. In one in the embodiment, bank layer (400) than the height of light emitting diode (300) can be greater height. Number 1 is also 7a opening (400a) and number 2 opening (400b) shown is rectangular for example without intending to be limited, of the present invention in the embodiment are not limited to, opening number 1 (400a) and number 2 opening (400b) is polygonal, rectangular, circular, conical, elliptical, such as triangle may have a variety of shapes.

Bank layer (400) part of the electrode number 2 (530) and electrically connected to the conductive layer (550) disposed thereon. Or shown but not, without performing the conductive layer, electrode number 2 (530) a common light guiding (U1, U2) as common electrode substrate (100) formed throughout the disapproval. Conductive layer (550) can be arranged in the direction parallel to the data line or scan line.

Bank layer (400) absorbing materials and at least a portion of the light, or light reflective material, or light scattering material can be. Bank layer (400) (e.g., 380 nm to 750 nm light wavelength range) visible light for translucent or opaque insulating material can be. Bank layer (400) polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone, polyvinyl butyral, polyphenylene ether, polyamide, polyether-imide, a norbornene (norbornene system) resin, methacrylic resin, cyclic polyolefin such as thermoplastic resin, epoxy resin, phenol resin, urethane resin, acrylic resin, vinyl ester resin, imide resin, urethane resin, urea (urea) resin, melamine resin (melamine) thermosetting resin, or polystyrene, polyacrylonitrile, but organic resultant such as polycarbonate, limited to are not correct. Bank layer (400) is SiOx, SiNx, SiNxOy, AlOx, TiOx, TaOx, ZnOx of inorganic oxide, inorganic-dry but may be formed of the insulating layer, the pieces are not correct.

In one in the embodiment, bank layer (400) black matrix (black matrix) can be wear resistant material such as opaque material. Insulating black matrix materials include organic resin, glass paste (glass paste) and black pigment including resin or paste, metal particles, such as nickel, aluminum, molybdenum and alloys thereof, metal oxide particles (e.g., chromium oxide), or metal nitride particles (e.g., chromium nitride) can be like. In the embodiment in other bank layer (400) of the Bragg reflector (DBR) a dispersing agent having a often reflection factor to form a mirror reflector can be.

Bank layer (400) opening of number 1 (400a) of the light-emitting diode (300) can be arranged. Light emitting diode (300) includes a micro LED implementation being. The size of 1 to 100 micro m can be used in reading the but, not of the present invention in the embodiment are the number one, or greater than a smaller light emitting diode can be applied. Light emitting diode (300) is on a wafer pickup (pick up) by individually or a plurality transfer substrate (100) is transferred to a substrate by (100) opening of number 1 (400a) can be received.

In the embodiment in one, light emitting diode (300) of the substrate (100) area (A1) of number 1 on the bank layer (400) and number 1 electrode (510) followed by a number 1 region (A1) number 1 on opening (400a) can be received. In other in the embodiment, conductive layer (550) after additional, light emitting diode (300) substrate (100) by number 1 region (A1) transferred to the number 1 on opening (400a) can be received. Light emitting diode (300) includes a red, green, blue, white LED or implementation being UV LED.

In one in the embodiment, of the present invention lighting device (20) such as liquid crystal display device includes a backlight unit (BLU) can be use. In which case light emitting diode (300) is white light for a white LED is used preferably.

Light emitting diode (300) is p a-n diode (380), number 1 contact electrode (310) and number 2 contact electrode (390) can be comprising. Number 1 contact electrode (310) and/or number 2 contact electrode (390) comprises at least one layer can be, metal, various conductive oxide and conductive polymers can be formed from thermally conductive material. Number 1 contact electrode (310) and number 2 contact electrode (390) reflective layer, e.g., the (silver) layer can be optionally include. Contact electrode number 1 (310) is electrode number 1 (510) and electrically connected with, contact electrode number 2 (390) is number 2 electrode (530) electrically connected thereto. P a-n diode (380) at the bottom of p - doped layer (330), one or more quantum well layer (350) and time n - doped layer (370) can be comprising. In other in the embodiment, upper doped layer (370) and the p - doped layer, lower doped layer (330) is n - doped layer can be. P a-n diode (380) is straight sidewall, or in top down or under the portion may have a tapered sidewall.

Number 1 electrode (510) and the (semi) transparent electrode or reflective around the center, can be one or more layers. For example, number 1 electrode (510) aluminum, molybdenum, titanium, titanium [theng the [su it shook off, is, or gold, or such as a metal can. Electrode number 1 (510) is ITO, IZO, ZnO, or In₂ O₃ A transparent conductive oxide (TCO), carbon nanotube films or transparent conductive such as a transparent conductive layer including conductive material, including a reflector layer and can be. In one in the embodiment, electrode number 1 (510) between the upper and lower layer and the transparent conductive layer including 3 be a reflective layer.

Number 2 electrode (530) can be around the camera. For example, number 2 electrode (530) aforementioned transparent conductive material can be formed, Ag, Al, Mg, Li, Ca, Cu, LiF/Ca, LiF/Al, MgAg and CaAg can be selected from one or more material.

In one in the embodiment, number 2 electrode (530) allows the conductive layer (100) is performed on the common electrode, substrate (100) of number 2 region (A2) taking into account the number 2 electrode plates (530) preferably formed of a transparent electrode.

Passivation layer (520) a bank layer (400) is arranged on the opening number 1 (400a) and number 2 opening (400b) can be embedded. Passivation layer (520) opening the number 1 (400a) in light emitting diode (300) can be surrounding. Passivation layer (520) a bank layer (400) and light emitting diode (300) by filling a space between, number 1 opening (400a) and number 1 electrode (510) covering the substrate. The passivation layer (520) opening the number 1 (400a) and number 2 opening (400b) to fill in the space in a lens by (600) is formed to allow lower surface can be flat.

Passivation layer (520) having light-transmitting property can be the organic insulating material. For example, passivation layer (520) the acrylic, poly (methyl methacrylate) (PMMA), benzo cyclobutene (BCB), polyimide, acrylate, epoxy and polyester and the like but, limited to are not correct. Passivation layer (520) comprises a light emitting diode (300) of, for example number 2 contact electrode (390) not cover formed height, number 2 contact electrode (930) are exposed. Passivation layer (520) is provided at the upper light emitting diode (300) contact electrode exposed number 2 (390) and conductive layer (550) number 2 electrode electrically connected (530) formed therein.

Example 7b shown as but also in vertical micro LED, of the present invention in the embodiment is not limited to, number 1 and number 2 contact electrode disposed towards the flip type micro LED such contact, horizontal micro LED etc. disclosed. In this case, the position of the number 1 and number 2 electrode number 1 number 2 can be disposed at a position corresponding to contact electrode and contact electrode.

Passivation layer (520) on lens (600) can be arranged. Lens (600) is a light emitting diode covers the substrate (100) of number 1 region (A1) and (A2) can be located over a number 2 region. Lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) located over it that, lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) as well as covering full, lens (600) substrate (100) area (A1) of number 1 and number 2 region (A2) covering at least a portion of means disapproval.

Lens (600) is may have an elliptical shape. The elliptical shape can be understood to provide the means by which a direction won shape formed on the mesa structure. By the (600) as part of the surface of the substrate through a light emitting diode (100) perpendicular to the part of the shape of virtual with a surface of elliptical motion can be understood to have. In lens also 7a (600) having an elliptical shape cross-section and a 16 X-a Y axis, the lens also 7b (600) X-a Z axis having an elliptical shape whose cross section 16 a is also shown. The present invention has the only this limited to, lens (600) as part of the surface of the substrate through a light emitting diode (100) with a surface of a shape of a part of the virtual perpendicular to the elliptical motion through the return network, lens (600) the overall shape light extraction amount can be polarity or direction to it.

In the in the embodiment, lens (600) (A1) is located with reference to the central portion of one side region and number 1, number 2 (A2) can be an exclusive area is located. Lens (600) is completely oval when the lens (600) the center section of the lens (600) but understood to [...] intrusiveness of, lens (600) is completely oval case lens (600) can be understood to focus in the area between the center section of the focus [...] number 1 number 2.

The aforementioned elliptical as shown with having the shape of lens (600) is number 1 number 2 may have the focus focus. The focus when optically access number 1 number 2 focus is of oval, elliptic elements are mirror facets corresponding ellipsoid reflected light and propagation in focal from reaching the focus before the other. In which direction to result even at a light propagation are the same.

In the embodiment if lens (600) can be located in a position corresponding to the focus of the light-emitting diode of number 1. In addition lens (600) of number 2 focus is substrate (100) corresponding to region of number 2 (A2) can be positioned. By the (600) number 1 is located at the focus of light emitting diode light emitted in the emission direction or to have a basically straight light emitting, the portion lens (600) by being reflected by the surface of the lens (600) focused position number 2 of substrate (100) number 2 area (A2) of the light-emitting surface. Through this light reflecting, substrate (100) number 1 (A1) of the anterior light emitting region as a light, substrate (100) area (A2) is equal to light as a light rear view of number 2.

Impurity display device in order to implementing one-way light panels laser emissive display device arranged rear-section. In the embodiment of the present invention the aforementioned display device such as one in a cylinder, a single-panel separator process from the computer display device.

Figure 8 shows a lighting device of the present invention also in the embodiment according to another (20B) to determine cross-section shown are disclosed.

In the embodiment according to the lighting device (20B) in 440 (700) 7a and 7b also described a number [...] components are also illumination device (20A) identical to the bar, without the aforementioned lighting device redundant described (20A) description of the aided as follows. In hereinafter 440 (700) to explain about less than 1000.

Substrate (100) is the number 1 (100a) and the number 1 (100a) on the side opposite the interactivity number 2 (100b) can be comprising. For example substrate (100) of the number 1 (100a) comprises a light emitting diode and lens (600) is placed which may be the, substrate (100) of the number 2 (100b) is the number 1 (100a) can be opposite side of a face of the table.

Substrate (100) of the number 1 (100a) on the aforementioned as well as, various insulators (111, 113, 115, 117) including light emitting diode and lens (600) can be located.

Substrate (100) of the number 2 (100b) on 440 (700) can be disposed. 440 (700) inkjet printing, screen printing, lamination, spin coating, sputtering or CVD (chemical vapor deosition) such as can be formed using. For example, fine particles including medium substrate (100) of the number 2 (100b) coating on, thermosetting and/or ultraviolet curing by cured through 440 (700) can be formed.

440 (700) smoothing function with light emitting diode (300) covered on electron emission light extraction efficiency sb2te3. 440 (700) such as a transparent binder (binder) can be fine particles dispersed transparent medium for light spreading. The microparticles may have to be several tens of nm size of micro m. Binder acrylic, urethane, epoxy resin or the like can be transparent material. The microparticles a transparent organic particles or inorganic particles can be. Organic particles are methyl methacrylate, acrylic acid, methacrylic acid, hydroxy ethyl meta [khu relay [thu, hydroxy [...], acrylamide, maul tyrol acryl amide, writing city [til meta [khu relay [thu, ethyl acrylate, isobutyl acrylate, roh the butyl arc relay [thu which rolls up, 2 - ethyl [...] homopolymer or copolymer of acrylic particles polyethylene, polystyrene, olefinic particles and acrylic and polyolefin copolymer of polypropylene homopolymer particles and particles of different types grown over a monomer of covering can be obtained multilayer multi-component particles. The inorganic particles comprise silicon oxide, aluminum oxide, titanium oxide, zirconium oxide and comprising magnesium fluoride etc. can be.

Figure 9 shows a liquid crystal display device of the present invention as shown in the embodiment according to another to determine cross-section also are disclosed. In the embodiment in Figure 9 is illumination of such a device (20) in a liquid crystal display backlight unit (BLU) 4. the device.

Figure 9 shows a liquid crystal display device of the present invention to determine the portion of cross-section as shown in the embodiment according to one also are disclosed. The liquid crystal display device in the embodiment according to the display elements including crystal element display unit (30) and display unit (30) for applying a light device (20) contact with each other.

Substrate (31) having light-transmitting property is provided, the substrate material may be glass, polyimide such as polymer material including board may be filled. The base is (31) on a plurality of display elements disposed thereon. Display elements have shown as shown with pixel electrodes (32R, 32G, 32B) and the common electrode (35) a black matrix (33) can be filled with liquid crystal elements. Pixel electrode (32R, 32G, 32B) and the common electrode (35) to also light-transmitting, ITO, IZO, ZnO or In2O 3 can be of translucent material. Pixel electrode (32R, 32G, 32B) wherein the thin film transistors can be electrically connected, to this substrate (31) and pixel electrodes (32R, 32G, 32B) (not shown) and the like can be interposed between the thin film transistor layer.

Also shown in maintenance work for a pixel electrode 9 as well as (32R, 32G, 32B) or common electrode (35) such as alignment film on more interposed, various deformable disclosed. In addition but not shown, each pixel electrode (32R, 32G, 32B) that corresponds to the pixel electrode (32R, 32G, 32B) (not shown) can be located on top of the color filters. Such a color filters (not shown) is a substrate (37) can be located on.

In one in the embodiment, lighting device includes a liquid crystal display device can be applied to the crystal. Lighting device is formed on a lower member located, can be light toward the display unit. In the embodiment includes a two-sided light emitting type lighting device according to the aforementioned are before the other number since, on both sides of a single lighting device for implementing a two-sided light emitting type liquid crystal display device can be disposed on the display unit.

The illumination device (20) can be the transparency. Lighting device (20) user transparent mode liquid crystal display device must ear a translucent rear, specifically illumination device (20) to enable the rear background's oldest.

In the case of the aforementioned liquid crystal display device depth such as crystal display device, liquid crystal device itself is not visible light source to separate light-emitting device can be required. To this end illumination device (20) substrate (31) can be irradiated with light through the display devices. Illumination device to emit light through the liquid crystal display panel via the number by a transmittance to light emitted is, full color images can be user perceived.

The present invention refers to drawing in the embodiment shown in and described with reference to an exemplary to avoid a is but a, if the art therefrom in various deformation and equally to the other person with skill in the art will understand that it is in the embodiment. The technical idea of the present invention defined by appended claim of true technology protection range generated by the will.