METHOD FOR MANUFACTURING SILICON OXIDE NANO WIRES

Disclosed herein is a method for manufacturing silicon oxide nano wires, the method including: a metal nano particle applying step of applying metal nano particles to a silicon wafer; and a heat treatment step of performing heat treatment under an atmosphere of reactive gas including hydrogen gas. Therefore, the silicon oxide nano wires may be manufactured by a simple process and a separate silicon source needs not to be injected, such that a manufacturing cost may be decreased and manufacturing efficiency may be improved, as compared with methods according to the related art. 1. A method for manufacturing silicon oxide nano wires , the method comprising:a metal nano particle applying step of applying metal nano particles to a silicon wafer; anda heat treatment step of performing heat treatment under an atmosphere of reactive gas including hydrogen gas.2. The method according to claim 1 , wherein the metal nano particles are nickel nano particles.3. The method according to claim 1 , wherein the heat treatment step is performed under the atmosphere of the reactive gas further including nitrogen.4. The method according to claim 3 , wherein the hydrogen gas is included in the reactive gas in a range of 1 to 99% of the entire volume of the reactive gas based on a standard state.5. The method according to claim 1 , wherein the metal nano particle applying step is performed by any one of an inkjet method claim 1 , a screen printing method claim 1 , and a gravure method.6. The method according to claim 1 , wherein the heat treatment step is performed at a temperature of 900 to 1100° C.7. The method according to claim 1 , wherein the heat treatment step is performed for 10 to 60 minutes.8. The method according to claim 2 , wherein the nickel nano wire has a diameter of 1 to 900 nm.9. The method according to claim 8 , wherein the metal nano particle applying step is performed by applying the nickel nano particles to the silicon wafer in the state in which they are mixed with ...

METHODS FOR ENHANCING THE PRESERVATION OF CELLULOSIC MATERIALS AND CELLULOSIC MATERIALS PREPARED THEREBY

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby. 177.-. (canceled)78. A method for treating cellulosic material comprising:(a) introducing the cellulosic material to be treated into a vessel;(b) introducing a treating composition into the vessel in an amount sufficient to immerse the cellulosic material therein, and thereafter providing a pressure within the vessel for a time sufficient to permit the treating composition to permeate the cellulosic material, wherein the treating composition is an aqueous alkaline copper containing solution comprising about 0.01 wt. % to about 10 wt. % copper tetraammine carbonate, the treating composition optionally further comprising one or more of an insecticide, mold inhibitor, algaecide, bactericide, water repellant, colorant or corrosion inhibitor;(c) removing from the vessel any treating solution not introduced into the cellulosic material after immersion;(d) introducing carbon dioxide into the vessel; and(e) removing the treated cellulose material from the vessel,wherein the cellulosic material is Southern Pine, Douglas Fir, Hem Fir or Spruce-Pine Fir.79. The method according to claim 78 , wherein the treating composition comprises about 0.05 wt. % to about 5 wt. % copper tetraammine carbonate.80. Treated cellulosic material prepared according to claim 78 , wherein the copper content in the treated cellulosic material is about 0.01 to about 0.3 lbs/ft.81. The treated cellulosic material of claim 80 , wherein the copper leaching of ...

METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE, PHASE SEPARATED STRUCTURE, AND BLOCK COPOLYMER COMPOSITION

A method of producing a structure containing a phase-separated structure, including applying a neutralization film to a substrate to form a layer of a neutralization film; applying a block copolymer having a plurality of polymers bonded thereto, and a weight average molecular weight of 150,000 or more to the layer of the neutralization film, so as to form a layer containing the block copolymer and having a coating film thickness of 23 nm or less; and phase-separating the layer containing the block copolymer. 1. A method of producing a structure containing a phase-separated structure , the method comprising:applying a neutralization film to a substrate to form a layer of the neutralization film;applying a block copolymer having a plurality of polymers bonded thereto, and a weight average molecular weight of 150,000 or more to the layer of the neutralization film, so as to form a layer containing the block copolymer and having a coating film thickness of 23 nm or less; andphase-separating the layer containing the block copolymer.2. The method according to claim 1 , wherein the block copolymer comprises a structural unit having an aromatic group and a structural unit derived from an (α-substituted) acrylic acid or an (α-substituted) acrylate ester.3. The method according to claim 2 , wherein a molar ratio of the structural unit having an aromatic group to the structural unit derived from an (α-substituted) acrylic acid or an (α-substituted) acrylate ester is in the range of 60:40 to 90:10.4. The method according to claim 1 , wherein the block copolymer has a period of 50 nm or more.5. The method according to claim 4 , wherein the structure is a cylindrical phase-separated structure perpendicular to the substrate.6. The method according to claim 1 , wherein the neutralization film comprises a resin composition obtainable from a monomer having an aromatic ring and a monomer having a trimethoxysilyl group.7. The method according to claim 1 , wherein the layer containing ...

METHODS FOR ENHANCING THE PRESERVATION OF CELLULOSIC MATERIALS AND CELLULOSIC MATERIALS PREPARED THEREBY

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper amine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby. 177.-. (canceled)78. A method for treating cellulosic material comprising:(a) introducing the cellulosic material to be treated into a vessel;(b) introducing a treating composition into the vessel in an amount sufficient to immerse the cellulosic material therein, and thereafter providing a pressure within the vessel of about 1 to about 300 psi, wherein the treating composition is an aqueous alkaline copper-containing solution comprising about 0.01 wt. % to about 10 wt. % copper tetraammine carbonate, the treating composition optionally further comprising one or more of an insecticide, mold inhibitor, algaecide, bactericide, water repellant, colorant or corrosion inhibitor,(c) removing from the vessel any treating solution not introduced into the cellulosic material after immersion for about 1 to about 300 minutes by pulling a vacuum within the vessel of up to about 30 in. Hg for about 1 to about 60 minutes;(d) introducing carbon dioxide into the vessel and thereafter maintaining the pressure in the vessel at no more than about 10 psi, wherein the carbon dioxide is resident in the vessel for about 1 to about 60 minutes; and(e) removing the treated cellulose material from the vessel.79. The method according to claim 78 , wherein the treating composition comprises about 0.05 wt. % to about 5 wt. % copper tetraammine carbonate.80. The method according to claim 78 , wherein the vessel pressure in step (b) is from about 75 psi ...

Preparation device and method of ceramic coating on a sintered type NdFeB permanent magnet

The disclosure relates to a preparation device and method of forming a ceramic coating on a sintered type NdFeB permanent magnet. The preparation device comprises a holding barrel, a pump body, a spraying system, and a fixture mechanism. The pump body is connected with the holding barrel and the spraying system and the spraying system is located above the fixture mechanism and there is a distance between the spraying system and the fixture mechanism. The fixture mechanism is connected with a recovery bucket through a pipeline, and the recovery bucket is connected with the holding barrel through the pipeline. The spraying system comprises a nozzle, wherein the inlet of the nozzle is connected with the pipeline of the pump body. The fixture mechanism comprises a support plate, an upper recovery trough plate and a lower recovery trough plate, wherein the lower recovery trough plate is located above the support plate.

OXIDE FILM DEPOSITION METHOD AND OXIDE FILM DEPOSITION DEVICE

The present invention provides a method for forming an oxide film by which normal formation of an oxide film is always achieved without receiving an influence of a change in the atmosphere, a metal oxide film having a low resistance can be formed, and a high efficiency of film formation is obtained. In the present invention, a raw material solution containing an alkyl compound is formed into a mist and ejected to a substrate () in the atmosphere. Additionally, an oxidizing agent that exerts an oxidizing effect on the alkyl compound is supplied to the mist of the raw material solution. Through the above-described processes, an oxide film is formed on the substrate in the present invention. 1100. A method for forming an oxide film on a substrate () , the method comprising performing:(A) a raw material mist ejection process for forming a raw material solution comprising an alkyl compound into a mist and ejecting said mist to said substrate in the atmosphere; and(B) an oxidizing agent supply process for supplying an oxidizing agent that exerts an oxidizing effect on said alkyl compound to said mist of said raw material solution that has been ejected to said substrate through said raw material mist ejection process.2. The method according to claim 1 , further comprising performing(C) an inert gas ejection process for ejecting an inert gas to a surrounding area of said mist of the raw material solution having been ejected.3. The oxide film formation method according to claim 1 , whereinthe ejection process (A) comprises a mist generation process for forming said raw material solution into a mist through an ultrasonic atomizing process.4. The oxide film formation method according to claim 1 , whereinsaid alkyl compound is selected from the group consisting of diethyl zinc, dimethyl zinc, dimethyl magnesium, diethyl magnesium, biscyclopentadienyl magnesium, trimethyl aluminum, triethyl aluminum, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, ...

Method for preparing fuel electrode of solid oxide electrolysis cells embedded with bimetallic catalyst

A method for uniformly forming a nickel-metal alloy catalyst in a fuel electrode of a solid oxide electrolysis cell is provided. Specifically, before the nickel-metal alloy catalyst is formed, a metal oxide is uniformly distributed on nickel oxide contained in the fuel electrode through infiltration of a metal oxide precursor solution and hydrolysis of urea.

CORE-SHELL STRUCTURED SILICATE LUMINESCENT MATERIAL AND PREPARATION METHOD THEREFOR

A core-shell structured silicate luminescent material and a preparation method thereof. The molecular formula of the luminescent material is: MLnSiO:xRE@SiO; where @ represents a coating, where M is one or two elements among Li, Na, and K, where Ln is one or two elements among Y, Sc, Lu and La, where the value of x is 0 Подробнее

LOW FRICTION WEAR RESISTANT GRAPHENE FILMS

A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface. 1. A method of forming a low friction wear surface comprising:disposing graphene over a substrate; anddisposing nanoparticles comprising one or more of nickel and diamond over the graphene;forming a plurality of graphene scrolls on the substrate.2. The method of claim 1 , wherein the nanoparticles comprise nickel and diamond and further wherein the nanoparticles have a size of about 2 nm to about 10 nm.3. The method of claim 1 , wherein the substrate comprises a material selected from the group consisting of a metal claim 1 , a transition metal and an insulator.4. The method of claim 2 , wherein the substrate comprises at least a portion of a bearing claim 2 , mold claim 2 , razor blade claim 2 , wind turbine claim 2 , gun barrel claim 2 , gas compressor claim 2 , fuel cell claim 2 , artificial hip joint claim 2 , artificial knee joint claim 2 , magnetic storage disk claim 2 , scratch-free monitor claim 2 , scratch-resistant monitor claim 2 , television claim 2 , barcode scanner claim 2 , solar panel claim 2 , watch claim 2 , mobile phone claim 2 , computer or electrical connector.5. The method of claim 1 , further comprising establishing a dry environment over the substrate.6. The method of claim 1 , wherein disposing graphene over the substrate comprises spraying a liquid containing graphene onto the substrate.7. The method of claim 1 , wherein disposing the nanoparticles over the substrate comprises spraying a liquid containing the nanoparticles onto the substrate.8. The method of claim 1 , further comprising forming a ...

ENHANCEMENT OF ANTIMICROBIAL SILVER, SILVER COATINGS, OR SILVER PLATINGS

Antimicrobial metal ion coatings. In particular, described herein are coatings including an anodic metal (e.g., silver and/or zinc and/or copper) that is co-deposited with a cathodic metal (e.g., palladium, platinum, gold, molybdenum, titanium, iridium, osmium, niobium or rhenium) on a substrate (including, but not limited to absorbable/resorbable substrates) so that the anodic metal is galvanically released as antimicrobial ions when the apparatus is exposed to a bodily fluid. The anodic metal may be at least about 25 percent by volume of the coating, resulting in a network of anodic metal with less than 20% of the anodic metal in the coating fully encapsulated by cathodic metal. 1. A method of forming an enhanced antimicrobial surface , the method comprising:co-depositing a coating of silver and a cathodic metal onto a substrate surface, wherein the co-deposited coating comprises a mixture of between about 25% and 75% by volume of silver, and between about 25% to 75% by volume of the cathodic metal; andapplying ozone to the coated surface for at least 5 minutes.2. The method of claim 1 , further comprising blasting the substrate surface with a noble gas or charged noble gas before applying the silver material.3. The method of claim 1 , further comprising blasting the substrate surface with argon before applying the silver metal.4. The method of claim 1 , wherein coating comprises coating the substrate surface with a silver material comprising a mixture of between about 25% and 75% by volume of silver claim 1 , and between about 25% to 75% by volume of a cathodic metal co-deposited on the substrate so that the coating comprises a plurality of microregions or microdomains of the silver in a matrix of cathodic metal or a plurality of microregions or microdomains of cathodic metal in a matrix of silver claim 1 , the microregions or microdomains forming a continuous path of interconnected veins of silver through the coating thickness claim 1 , or a continuous path of ...

METHOD FOR THE FORMATION OF TANTALUM CARBIDES ON GRAPHITE SUBSTRATE

A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate. 1. A method for the formation of tantalum carbides on a graphite substrate , comprising:(A) providing an organic tantalum compound;(B) adding the organic tantalum compound to a chelating agent to form a chelated tantalum compound;(C) adding the chelated tantalum compound to an organic solvent to form a tantalum solution;(D) adding a pre-polymer to the tantalum solution to form a tantalum polymeric solution;(E) applying the tantalum polymeric solution onto a graphite substrate;(F) subjecting the graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate;(G) placing the polymeric tantalum film on the graphite substrate in an oven; and(H) subjecting the polymeric tantalum film on the graphite substrate in the oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.2. The method for the formation of tantalum carbides on a graphite substrate of claim 1 , wherein the organic tantalum compound is a liquid organic tantalum source.3. The method for the formation of tantalum carbides on a graphite substrate of claim 2 , wherein the liquid organic tantalum source is selected from a group consisting of tantalum methoxide claim 2 , tantalum ethoxide claim 2 , tantalum isopropoxide and tantalum butoxide.4. The method for the formation of tantalum ...

HYDROPHILIC COATINGS FORMED BY ATMOSPHERIC CO2 REACTION

Hydrophilic coating compositions and methods to make and use the compositions are disclosed. The compositions include a polymer comprising guanidinyl, amidinyl, hydroxyalkylaminoalkyl, or dihydroxyalkylamino alkyl functional groups. The functional groups react with atmospheric COto form ionic or polyelectrolytic groups, thus transforming a coated surface from hydrophobic to hydrophilic upon exposure to CO. 1. A coating composition comprising:a polymer comprising at least one functional group selected from the group consisting of guanidinyl, amidinyl, hydroxyalkylaminoalkyl and dihydroxyalkylamino alkyl, wherein the at least one functional group on a surface of the polymer is configured to react with carbon dioxide to form a hydrophilic polymer coating.2. The coating composition of claim 1 , wherein the polymer is a vinyl polymer claim 1 , an acrylic polymer claim 1 , a styrenic polymer claim 1 , or any combination thereof.3. The coating composition of claim 1 , wherein the polymer is a polymer or a copolymer of alkyl acrylate claim 1 , alkyl methacrylate claim 1 , allyl methacrylate claim 1 , acrylic acid claim 1 , methacrylic acid claim 1 , acrylamide claim 1 , 2-hydroxyethyl methacrylate claim 1 , 2-hydroxypropyl methacrylate claim 1 , thioethyl methacrylate claim 1 , vinyl methacrylate claim 1 , vinyl benzene claim 1 , 2-hydroxyethyl acrylate claim 1 , butyl acrylate claim 1 , 2-ethylhexyl acrylate claim 1 , vinyltrimethoxysilane claim 1 , vinyltriethoxysilane claim 1 , vinyl formate claim 1 , vinyl acetate claim 1 , vinyl propionate claim 1 , vinyl butyrate claim 1 , vinyl hexanoate claim 1 , vinyltoluene claim 1 , α-methyl styrene claim 1 , chlorostyrene claim 1 , styrenesulfonic acid claim 1 , or any combination thereof.4. The coating composition of claim 1 , wherein the polymer further comprises at least one hydroxyl functional group.5. The coating composition of claim 1 , further comprising a solvent claim 1 , a pigment claim 1 , a coalescing agent claim 1 , ...

HEAT SHIELDING MATERIAL AND METHOD FOR MANUFACTURING THE SAME

A heat shielding material and method for manufacturing thereof is provided. The method for manufacturing the heat shielding material, includes: providing a tungsten oxide precursor solution containing a group VIIIB metal element; drying the tungsten oxide precursor solution to form a dried tungsten oxide precursor; and subjecting the dried tungsten oxide precursor to a reducing gas at a temperature of 100° C. to ° C. to form a composite tungsten oxide. The heat shielding material includes composite tungsten oxide doped with a group IA or IIA metal and halogen, represented by MWOor MWOA, wherein M refers to at least one of a group IA or IIA metal, W refers to tungsten, O refers to oxygen, and A refers to a halogen element. The heat shielding material also includes a group VIIIB metal element. 1. A heat shielding material , comprising: {'br': None, 'sub': x', 'y', 'z, 'MWOA, \u2003\u2003(II)'}, '(i) composite tungsten oxide doped with a group IA or IIA metal and halogen, represented by formula (II)wherein M refers to at least one of a group IA or IIA metal, W refers to tungsten, O refers to oxygen, and A refers to a halogen element, and 0 Подробнее

Method for coating a substrate with a lacquer and device for planarising a lacquer layer

The disclosure relates to a method for coating a substrate with a lacquer. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarising a lacquer layer. 1. A device for planarising a lacquer layer on a substrate , the device comprising:a treatment chamber;a drying device configured to reduce a solvent proportion of the lacquer layer; andan evaporator disposed to produce a solvent atmosphere in the treatment chamber.2. The device of claim 1 , further comprising a coating device configured to apply the lacquer uniformly to the substrate.3. The device of claim 1 , wherein the drying device further comprises a vacuum pump configured to produce a vacuum in the treatment chamber.4. The device of claim 1 , wherein the drying device further comprises a heating device configured to heat the lacquer layer.5. The device of claim 1 , further comprising a heating system disposed for atmospheric heating of the treatment chamber.6. The device of claim 1 , wherein the evaporator is configured to produce a solvent atmosphere with a solvent proportion of at least 50 mol. %.7. The device of claim 1 , wherein the evaporator is configured to produce a solvent atmosphere with a solvent proportion of at least 70 mol. %. This application is a Divisional of U.S. patent application Ser. No. 14/861,105 filed Sep. 22, 2015, which claims the right of priority based on German application serial no. 10 2014 113 928.3, filed Sep. 25, 2014, which is incorporated by reference in its entirety.The disclosure herein relates to a method for coating a substrate with a lacquer and to a device for planarising a lacquer layer on a substrate.Micro- and nano-fabrication processes typically use lacquers which are applied in a layer onto the substrate to be processed. With the ...

SPIN-ON-GLASS ASSISTED POLISHING OF ROUGH SUBSTRATES

A method produces a smooth surface on a rough substrate. The rough substrate is coated with a film or particles of spin-on-glass (SOG) dissolved in a solvent using spin coating, spray coating or dip coating. The SOG is made to reflow by using thermal melting and solvent thinning. The reflow is done in an atmosphere containing a partial pressure of the solvent. The reflow allows the SOG to partially melt and to decrease the surface roughnesss of the film. The SOG is cured by thermal curing or UV exposure radiation curing into a hard durable and chemical inert silicon dioxide film. The SOG can be hydrogen silsesquioxane or methyl silsesquioxane dissolved in either methyl isobutyl ketone or volatile methyl siloxanes. The method can include embossing, chemical mechanical polishing, etching and functionalizing the surface. The substrate can be a cast, mould or form for producing a polymer or a glass replica. 1. A method for producing a topographically smooth surface , said method comprising:applying a spin-on-glass polishing film onto at least one part of a rough substrate consisting of a metal, metal alloy or ceramic material;bringing said polishing film to a reflow condition at a reflow temperature in an atmosphere containing a partial pressure of a solvent capable of dissolving said spin-on-glass upon which the polishing film is spontaneously smoothened, andcuring said polishing film of spin-on-glass by cross-linking the individual molecules, thereby transforming it into a solid ceramic material primarily consisting of silicon dioxide.2. A method according to claim 1 , wherein the surface is durable or chemically inert.3. A method according to claim 1 , wherein the reflow process takes place in an atmosphere containing an at least 20% saturated partial pressure of solvent.4. A method according to claim 1 , where the reflow process takes place at a temperature between −20° C. and 200° C.5. A method according to claim 1 , wherein the surface roughness of the substrate ...

Methods And Apparatus For Cryogenic Gas Stream Assisted SAM-Based Selective Deposition

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described. 1. A method comprising:providing a substrate comprising a first surface and a second surface;exposing the substrate to a SAM precursor to selectively form a SAM layer on the first surface over the second surface, the SAM layer containing defects that expose portions of the first surface;depositing a film on the second surface and exposed portions of the first surface, the film having a first average thickness on the first surface and a second average thickness on the second surface, the first average thickness being less than the second average thickness; andexposing the substrate to a cryogenic gas stream to remove an amount of the film from the first surface.2. The method of claim 1 , wherein the first surface is on a dielectric material and the second surface is on a conductive material.3. The method of claim 2 , wherein the dielectric material comprises one or more of silicon oxide claim 2 , silicon nitride or silicon carbide.4. The method of claim 2 , wherein the conductive material comprises one or more of ruthenium claim 2 , copper or cobalt.5. The method of claim 1 , wherein the film comprises a metal oxide.6. The method of claim 1 , wherein the cryogenic gas stream comprises one or more of CO claim 1 , N claim 1 , Ar or Ne.7. The method of claim 1 , wherein the cryogenic gas stream comprises an aerosol having particles of cryogenic gas clusters claim 1 , the particles having a root mean square velocity greater than or equal to about 340 m/s.8. The method of claim 7 , wherein the root mean square velocity is ...

HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features. 1. A method , comprising: the SA material is capable of self-assembling to form a phase separated lamellar domain pattern having a characteristic pitch Lo,', 'the pre-pattern is disposed on a substrate,', 'the top surface of the pre-pattern has a geometrical major axis,', 'the top surface of the pre-pattern comprises a) independent elevated surfaces interspersed with adjacent recessed surfaces and b) sidewalls joining elevated surfaces to recessed surfaces,', 'material underlying the elevated surfaces of the pre-pattern has greater etch-resistance in a given etch process compared to material underlying the recessed surfaces of the pre-pattern,', {'sub': 'E', 'a given elevated surface has width Wdefined as the length of the given elevated surface in a direction perpendicular to the major axis,'}, {'sub': 'R', 'a given recessed surface has width Wdefined as the length of the recessed surface in a ...

UPPER-LAYER FILM FORMING COMPOSITION AND METHOD FOR PRODUCING A PHASE-SEPARATED PATTERN

An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate. 111-. (canceled)12. An upper-layer film forming composition for use in causing phase-separation in a layer comprising a block copolymer formed on a substrate , comprising:(A) a copolymer comprising (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and(B) an ether compound having 8 to 16 carbon atoms as a solvent.16. The composition according to claim 12 , wherein copolymer (A) further comprises (b) a unit structure derived from (meth)acryl group.17. The composition according to claim 13 , wherein copolymer (A) further comprises (b) a unit structure derived from (meth)acryl group.18. The composition according to claim 14 , wherein copolymer (A) further comprises (b) a unit structure derived from (meth)acryl group.19. The composition according to claim 15 , wherein copolymer (A) further comprises (b) a unit structure derived from (meth)acryl group.25. A method for forming a block copolymer phase-separated pattern claim 15 , comprising the steps of:(1) forming a block copolymer layer on a substrate;{'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, '(2) forming an upper-layer film on the block copolymer layer with the composition according to ; and'}(3) causing phase separation in the block copolymer layer formed on the substrate.26. A method for producing a pattern claim 15 , comprising ...

ULTRA-HIGH DENSITY SINGLE-WALLED CARBON NANOTUBE HORIZONTAL ARRAY AND ITS CONTROLLABLE PREPARATION METHOD

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm. 1. A method for preparing ultra-high density single-walled carbon nanotube horizontal array , comprising the following steps:loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct an orientated growth of the single-walled carbon nanotubes, then after the growth, the ultra-high density single-walled carbon nanotube horizontal array is directly obtained on the single crystal growth substrate.2. The method of claim 1 , wherein a material constituting the single crystal growth substrate is ST-cut quartz claim 1 , R-cut quartz claim 1 , a-plane α alumina claim 1 , r-plane α alumina or magnesium oxide;the catalyst is selected from a metal nanoparticle, wherein a metal element in the metal nanoparticle is selected from at least one of Fe, Co, Ni, Cu, Au, Mo, W, Ru, Rh, and Pd; the particle size of the catalyst is 1 nm-3 nm.3. The method of claim 1 , further comprising claim 1 , conducting a pretreatment of the single crystal growth substrate before loading the catalyst; ...

COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9 Подробнее

ENHANCEMENT OF ANTIMICROBIAL SILVER, SILVER COATINGS, OR SILVER PLATINGS

Antimicrobial metal ion coatings. In particular, described herein are coatings including an anodic metal (e.g., silver and/or zinc and/or copper) that is co-deposited with a cathodic metal (e.g., palladium, platinum, gold, molybdenum, titanium, iridium, osmium, niobium or rhenium) on a substrate (including, but not limited to absorbable/resorbable substrates) so that the anodic metal is galvanically released as antimicrobial ions when the apparatus is exposed to a bodily fluid. The anodic metal may be at least about 25 percent by volume of the coating, resulting in a network of anodic metal with less than 20% of the anodic metal in the coating fully encapsulated by cathodic metal. 1. A method of forming an enhanced antimicrobial surface , the method comprising:co-depositing a coating of silver and a cathodic metal onto a substrate surface, wherein the co-deposited coating comprises a mixture of between about 25% and 75% by volume of silver, and between about 25% to 75% by volume of the cathodic metal; andapplying ozone to the coated surface for at least 5 minutes.2. The method of claim 1 , further comprising blasting the substrate surface with a noble gas or charged noble gas before applying the silver material.3. The method of claim 1 , further comprising blasting the substrate surface with argon before applying the silver metal.4. The method of claim 1 , wherein coating comprises coating the substrate surface with a silver material comprising a mixture of between about 25% and 75% by volume of silver claim 1 , and between about 25% to 75% by volume of a cathodic metal co-deposited on the substrate so that the coating comprises a plurality of microregions or microdomains of the silver in a matrix of cathodic metal or a plurality of microregions or microdomains of cathodic metal in a matrix of silver claim 1 , the microregions or microdomains forming a continuous path of interconnected veins of silver through the coating thickness claim 1 , or a continuous path of ...

HYBRID TOPOGRAPHICAL AND CHEMICAL PRE-PATTERNS FOR DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features. 2. The layered structure of claim 1 , wherein the substrate comprises a silicon wafer or a metal foil as a bottom layer of the substrate.3. The layered structure of claim 1 , wherein the substrate comprises one or more layers comprising materials selected from the group consisting of silicon nitrides claim 1 , carbon film claim 1 , spin-on carbon claim 1 , silicon oxide claim 1 , metal oxides claim 1 , antireflection materials claim 1 , and combinations thereof disposed on the bottom layer.4. The layered structure of claim 1 , wherein the SA material comprises a block copolymer.5. The layered structure of claim 4 , wherein the block copolymer is poly(styrene-b-methyl methacrylate) block copolymer.6. The layered structure of claim 1 , wherein the top surface of the hybrid pre-pattern comprises two or more regions comprising recessed surfaces having different values of W.7. The layered structure of claim ...

SELF-ASSEMBLED STRUCTURE AND MEMBRANE COMPRISING BLOCK COPOLYMER AND PROCESS FOR PRODUCING THE SAME BY SPIN COATING (IIIa)

Disclosed are self-assembled structures formed from self-assembling diblock copolymers of the formula (I): 2. The method of claim 1 , wherein R is H.3. The method of claim 1 , wherein p is 3-6.4. The method of claim 1 , wherein R′ is a C-Calkyl group.5. The method of claim 1 , wherein R′ is methyl.6. The method of claim 1 , wherein Ris a phenyl group claim 1 , optionally substituted with a substituent selected from hydroxy claim 1 , amino claim 1 , halo claim 1 , alkoxy claim 1 , alkylcarbonyl claim 1 , alkoxycarbonyl claim 1 , amido claim 1 , and nitro.7. The method of claim 1 , wherein Ris phenyl.8. The method of claim 1 , wherein Ris a C-Calkoxy group.9. The method of claim 1 , wherein n is about 30 to about 350 and m is about 150 to about 1775.11. The method of claim 1 , wherein the solvent system includes a solvent or a mixture of solvents selected from halogenated hydrocarbons claim 1 , ethers claim 1 , amides claim 1 , and sulfoxides.12. The method of claim 1 , wherein the solvent system includes a solvent or a mixture of solvents selected from dichloromethane claim 1 , 1-chloropentane claim 1 , 1 claim 1 ,1-dichloroethane claim 1 , dimethylformamide claim 1 , dimethylacetamide claim 1 , N-methylpyrrolidone claim 1 , dimethylsulfoxide claim 1 , tetrahydrofuran claim 1 , 1 claim 1 ,3-dioxane claim 1 , and 1 claim 1 ,4-dioxane.13. The method of claim 1 , wherein the polymer solution contains about 0.1 to about 2% by weight of the diblock copolymer.14. The method of claim 1 , wherein the substrate is selected from glass claim 1 , silicon wafer claim 1 , metal plate claim 1 , plastic film claim 1 , and a plastic film coated on a glass substrate or on a silicon wafer.15. The method of claim 1 , wherein the substrate is porous.16. The method of claim 1 , wherein the annealing is carried out in the presence of a solvent vapor.17. A self-assembled structure prepared by the method of .18. A porous membrane prepared from the self-assembled structure of claim 17 , ...

Heat treatment method and heat treatment apparatus

一种钕铁硼永磁体陶瓷镀层的制备装置及制备方法

本发明涉及一种钕铁硼永磁体陶瓷化镀层的制备装置及制备方法，其特点是制备装置包括容纳桶、泵体、喷涂系统、夹具机构，泵体连接容纳桶与喷涂系统，喷涂系统位于夹具机构的上方，喷涂系统与夹具机构之间存在距离，夹具机构通过管路与回收桶相通，回收桶与容纳桶通过管路相通；通过使用制备设备在钕铁硼永磁体表面精密喷涂一层可陶瓷化镀层前驱体，加热陶瓷镀层前驱体固化后形成有机陶瓷镀层，之后进行高温裂解处理，形成复合陶瓷镀层。本发明采用高精密喷涂设备同时回收浆料相结合的方式，提高了陶瓷前驱体的利用效率，效率达90%以上，减少陶瓷前驱液的浪费而且保证磁体陶瓷的厚度均匀性，很大提高了磁体的防腐性能、耐高温性能、耐磨性能等。

Rf plasma-enhanced deposition of fluorinated films

Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

RF plasma-enhanced deposition of fluorinated films

Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method

用于形成选自PLZT、PZT及PT的1种强电介质薄膜的本发明的强电介质薄膜形成用组合物，是用于形成采取复合金属氧化物形态的薄膜的液态组合物，所述复合金属氧化物是在通式(1):(Pb x La y )(Zr z Ti (1‑z) )O 3 表示的复合金属氧化物A中混合通式(2)C n H 2n+1 COOH表示的、并且、配位在上述金属上时能够形成下式(3)的结构的、羧酸B得到的，式(1)中0.9<x<1.3、0≤y<0.1、0≤z<0.9，其中，3≤n≤7，包含用于构成上述复合金属氧化物A的原料及上述羧酸B以羧酸B和复合金属氧化物A的摩尔比B/A为0<B/A<0.2的范围内地溶解在有机溶剂中的有机金属化合物溶液。

Method and apparatus for processing organosiloxane film

유기실록산막을 처리하는 방법은, 유기 관능기를 갖는 폴리실록산계의 약액의 도포막이 배치된 기판(W)을 반응실(2) 내로 반입하는 공정과, 반응실(2) 내에서 기판(W)에 대해 열처리를 행하여 도포막을 소성하는 공정을 포함한다. 열처리는 반응실(2) 내를 제1 ph 또는 제1 처리 온도의 분위기로 설정하면서 도포막을 가열하는 제1 가열 공정과, 다음에 반응실(2) 내를 제2 ph 또는 제2 처리 온도의 분위기로 설정하면서 도포막을 가열하는 제2 가열 공정을 포함한다. 제1 ph는 도포막의 가수 분해 반응을 촉진하도록 선택된다. 제2 ph는 도포막의 축합 반응을 촉진하도록 선택된다. 반응실, 기판, 외관, 내관, 매니폴드, 반도체 웨이퍼, 열처리 장치

Gas processor

정류면부(37a)는 웨이퍼(W)의 둘레가장자리부로부터 밀폐용기의 중심부로 가는 도중에 일단 웨이퍼(W)에서 가장 멀어지고, 정류면부(37a)의 배기구(35a)를 둘러싸는 중앙 근방의 부분에서 다시 웨이퍼(W)에 근접하도록 아래쪽을 향하여 볼록하게 나와 있다. 즉, 정류면부(37a)를 종단면에서 볼 때에 정류면부(37a)의 배기구(35a)를 둘러싸는 주변영역에 볼록부(37c)가 형성되어 있다. 이 정류면부(37a)의 표면에 따라 처리가스가 흐르기 때문에 웨이퍼(W)의 반경방향에 걸쳐 처리가스와 웨이퍼(W)와의 접촉이 균일화되고, 그에 따라 균일한 막이 형성된다. The rectifying surface portion 37a is farthest from the wafer W once on the way from the circumferential edge of the wafer W to the center of the hermetic container, and at a portion near the center surrounding the exhaust port 35a of the rectifying surface portion 37a. It is convexly facing downward to approach the wafer W again. That is, the convex part 37c is formed in the peripheral area which surrounds the exhaust port 35a of the rectifying surface part 37a when viewing the rectifying surface part 37a from a longitudinal cross section. Since the processing gas flows along the surface of the rectifying surface portion 37a, the contact between the processing gas and the wafer W is uniform over the radial direction of the wafer W, thereby forming a uniform film.

Apparatus for vapor phase processing ophthalmic devices

This invention discloses apparatus for processing one or more of a Lens Precursor, a Lens Precursor Form and an ophthalmic Lens. The apparatus provides for vapor phase processing of the subject Lens Precursor, a Lens Precursor Form and an ophthalmic Lens.

Apparatus for vapor phase processing ophthalmic devices

This invention discloses apparatus for processing one or more of a Lens Precursor, a Lens Precursor Form and an ophthalmic Lens. The apparatus provides for vapor phase processing of the subject Lens Precursor, a Lens Precursor Form and an ophthalmic Lens.

Apparatus for vapor phase processing ophthalmic devices

This invention discloses apparatus for processing one or more of a Lens Precursor, a Lens Precursor Form and an ophthalmic Lens. The apparatus provides for vapor phase processing of the subject Lens Precursor, a Lens Precursor Form and an ophthalmic Lens.

Composition for ferroelectric thin film formation, method for ferroelectric thin film formation, and ferroelectric thin film formed by the method

PLZT, PZT 및 PT 로 이루어지는 군에서 선택된 1 종의 강유전체 박막을 형성하기 위한, 본 발명의 강유전체 박막 형성용 조성물은, 일반식 (1) : (Pb x La y )(Zr z Ti (1-z) )O 3 (식 (1) 중 0.9 ＜ x ＜ 1.3, 0 y ＜ 0.1, 0 z ＜ 0.9) 로 나타내는 복합 금속 산화물 A 에, 복합 산화물 B 또는 일반식 (2) C n H 2n＋1 COOH (단, 3 n 7) 로 나타내는 카르복실산 B 가 혼합된 혼합 복합 금속 산화물의 형태를 취하는 박막을 형성하기 위한 액상 조성물이며, 복합 산화물 B 는, Si, Ce 및 Bi 의 군에서 선택되는 1 종 또는 2 종 이상, Sn, Sm, Nd 및 Y (이트륨) 의 군에서 선택되는 1 종 또는 2 종 이상을 함유하고 있다. The composition for forming a ferroelectric thin film of the present invention for forming one kind of ferroelectric thin film selected from the group consisting of PLZT, PZT and PT is characterized in that the composition represented by the general formula (1): (Pb x La y ) (Zr z Ti (1-z ) ) O 3 (0.9 <x <1.3, 0 in the formula (1) y &lt; 0.1, 0 z &lt; 0.9), a complex oxide B or a compound represented by the general formula (2) C n H 2n + 1 COOH (provided that 3 n 7), wherein the composite oxide B is at least one compound selected from the group consisting of Si, Ce and Bi, and at least one compound selected from the group consisting of Si, Ce and Bi, Sn, Sm, Nd and Y (yttrium).

Patent DE3042770C2

Apparatus for vapor phase processing ophthalmic devices

본 발명은 렌즈 전구체(201), 렌즈 전구체 폼 및 안과용 렌즈 중 하나 이상을 처리하기 위한 장치를 개시하고 있다. 장치는 맨드렐(212), 및 렌즈 전구체 둘레의 기상 환경을 둘러싸는 챔버(203)를 포함한다. The present invention discloses an apparatus for treating at least one of a lens precursor 201, a lens precursor foam, and an ophthalmic lens. The apparatus includes a mandrel 212 and a chamber 203 surrounding the vapor environment around the lens precursor.

Self-assembled structure and membrane comprising block copolymer and process for producing the same by spin coating (IIIa)

하기 화학식 (I)의 자기조립 2종블록 코폴리머로부터 형성된 자기조립 구조체가 개시된다: (I), 여기서, R 1 -R 4 , n, 및 m은 본 명세서에서 설명된 바와 같고, 이는 나노다공성 막을 제조하는 용도를 발견한다. 상기 자기조립 구조체의 구현예들에서, 블록 코폴리머는 원통 형태로 자기조립한다. 또한, 이러한 자기조립 구조체의 제조 방법이 개시되며, 이는 상기 2종블록 코폴리머를 함유하는 폴리머 용액을 스핀코팅하여 박막을 얻는 단계, 이어서 상기 필름을 용매 아닐링하는 단계를 포함한다. 또한, 상기 자기조립 구조체로부터 다공성 막을 제조하는 방법을 개시한다. Disclosed is a self assembled structure formed from a self assembled two-block copolymer of formula (I) (I), Where R 1 -R 4 , n, and m are as described herein, which finds use to produce nanoporous membranes. In embodiments of the self assembled structure, the block copolymer self assembles into a cylindrical shape. Also disclosed is a method of making such a self-assembled structure comprising spin coating a polymer solution containing the two-block copolymer to obtain a thin film, followed by solvent annealing the film. Also disclosed is a method for manufacturing a porous membrane from the self-assembled structure.

DEVICE FOR GAS-PHASE PROCESSING OF OPHTHALMIC DEVICES

1. Устройство для обработки предшественника линзы, содержащее:оправку с поверхностью для удержания предшественника линзы; икамеру, содержащую газофазную среду в непосредственной близости к поверхности оправки.2. Устройство по п. 1, дополнительно содержащее выпуск для удаления газа, или жидкости или их обоих из области внутри камеры в область за ее пределами.3. Устройство по п. 1, дополнительно содержащее впуск для подвода газа, или жидкости или их обоих в упомянутую камеру.4. Устройство по п. 3, в котором газ содержит инертный газ.5. Устройство по п. 3, в котором жидкость содержит мономер, отличный от мономера, используемого для изготовления предшественника линзы, который удерживается в оправке.6. Устройство по п. 2, дополнительно содержащее клапан, регулирующий перемещение газа, или жидкости или их обоих через выпуск.7. Устройство по п. 3, дополнительно содержащее клапан, регулирующий перемещение газа, или жидкости или их обоих через впуск.8. Устройство по п. 6, дополнительно содержащее устройство, обеспечивающее обмен флюида между областью внутри камеры, под верхушкой предшественника линзы и областью вне камеры.9. Устройство по п. 7, в котором устройство, обеспечивающее обмен флюида между точкой внутри камеры и областью вне камеры, обеспечивает перенос одного или более газа и жидкости из области внутри камеры в область за ее пределами.10. Устройство по п. 7, в котором устройство, обеспечивающее обмен флюида между точкой внутри камеры и областью вне камеры, обеспечивает перенос одного или более газа и жидкости из области за пределами камеры в область внутри камеры.11. Устройство по п. 6, дополнительно содержащее:датчик для изме� РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК B29D 11/00 (13) 2012 143 609 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2012143609/05, 10.03.2011 (71) Заявитель(и): ДЖОНСОН ЭНД ДЖОНСОН ВИЖН КЭА, ИНК. (US) Приоритет(ы): (30) Конвенционный приоритет: 12.03.2010 US 12/722,820 (85) ...

Pattern formation method

vapor phase apparatus for ophthalmic devices

aparelho para processamento em fase de vapor de dispositivo oftálmicos. a presente invenção refere-se a um aparelho para processamento de um ou mais dentre um precursor de lente (201), um forma de precursor de lente e uma lente oftálmica. o aparelho compreende um mandril (212) e uma câmara (203) que circunda um ambiente de fase de vapor ao redor do precursor de lente. apparatus for vapor phase processing of ophthalmic devices. The present invention relates to an apparatus for processing one or more of a lens precursor (201), a lens precursor form and an ophthalmic lens. the apparatus comprises a mandrel (212) and a chamber (203) surrounding a vapor phase environment around the lens precursor.

Self-assembled structure and membrane comprising block copolymer and process for producing the same by spin coating (iiia)

Disclosed are self-assembled structures formed from self-assembling diblock copolymers of the formula (I):

Pattern forming process

본 발명은, 유기 용제 현상에 의한 네거티브 톤의 패턴 형성에 있어서, PEB 중의 레지스트막의 수축을 저감하고, 현상 후의 트렌치 패턴의 변형을 막는 것이 가능한 패턴 형성 방법을 제공하는 것을 목적으로 한다. 본 발명은, 카르복실기가 산 불안정기로 치환된 반복 단위를 포함하는 베이스 수지 및 유기 용제를 포함하는 레지스트 조성물을 기판 상에 도포하여 레지스트막을 형성하는 공정, 가열 처리 후에 고에너지선으로 상기 레지스트막을 노광하는 공정, 건조 공기 1 ㎏당 수분량이 10 g 이상인 고습도 환경 하에서 가열 처리를 행하는 포스트 익스포저 베이크를 행하는 공정, 및 유기 용제의 현상액을 이용하여 네거티브 패턴을 형성하는 공정을 포함하는 패턴 형성 방법에 관한 것이다. An object of the present invention is to provide a pattern forming method capable of reducing contraction of a resist film in PEB and preventing deformation of a trench pattern after development in pattern formation of a negative tone by organic solvent development. The present invention provides a resist composition comprising a step of applying a resist composition comprising a base resin containing a repeating unit in which a carboxyl group is substituted with an acid labile group and an organic solvent to a substrate to form a resist film, A step of performing a post exposure bake in which heat treatment is performed in a high humidity environment in which the water content per 1 kg of dry air is 10 g or more, and a step of forming a negative pattern using a developer of an organic solvent.

Composition for ferroelectric thin film formation and method for forming ferroelectric thin film

Method for Preparing Porous Polymer Film with Controlled Pore Depth and Porous Polymer Film Prepared by Same

본 발명은 기공 형성 깊이가 제어된 다공성 중합체 필름의 제조방법 및 이로부터 제조된 다공성 중합체 필름에 관한 것으로서, 본 발명에 따른 다공성 중합체 필름의 제조방법은 간단하고 저비용으로 다공성 필름의 기공 형성 깊이를 제어할 수 있기 때문에 제조된 필름의 광반사율을 조절할 수 있다. 또한, 간단한 방법을 통해 대면적 필름의 제작이 가능하기 때문에 다양한 산업분야에 적용될 수 있으며, 서로 다른 반사율을 가진 필름의 제조가 가능하기 때문에 태양전지를 위한 저반사, 고반사 필름 뿐만 아니라 향후 건축 분야 또는 자재 설비 분야에서 저반사 또는 고반사의 박막 중합체 필름으로 적용이 가능하다.

Apparatus for vapor phase processing ophthalmic devices

본 발명은 렌즈 전구체(201), 렌즈 전구체 폼 및 안과용 렌즈 중 하나 이상을 처리하기 위한 장치를 개시하고 있다. 장치는 맨드렐(212), 및 렌즈 전구체 둘레의 기상 환경을 둘러싸는 챔버(203)를 포함한다.

Process for coating a substrate with a lacquer and device for planarizing a lacquer layer

Die Erfindung betrifft ein Verfahren zum Beschichten eines Substrats (26) mit einem Lack, mit den folgenden Schritten: - zunächst wird der Lack gleichmäßig auf das Substrat (26) aufgebracht, - anschließend wird der Lösungsmittelanteil des auf dem Substrat (26) aufgebrachten Lackes (30) verringert, - danach wird das beschichtete Substrat (26) einer Lösungsmittelatmosphäre in einem Behandlungsraum (12) ausgesetzt. Die Erfindung betrifft ferner eine Vorrichtung zum Planarisieren einer Lackschicht. The invention relates to a method for coating a substrate (26) with a lacquer, having the following steps: - initially the lacquer is uniformly applied to the substrate (26), - then the solvent content of the lacquer applied to the substrate (26) ( 30), - thereafter the coated substrate (26) is exposed to a solvent atmosphere in a treatment space (12). The invention further relates to a device for planarizing a lacquer layer.

Pattern forming process

本發明提供能在利用有機溶劑顯影形成負調圖案時減低PEB中之光阻膜之收縮並防止顯影後之溝渠圖案變形的圖案形成方法。 一種圖案形成方法，包括以下步驟：將包含含有羧基經酸不穩定基取代的重複單元的基礎樹脂與有機溶劑的光阻組成物塗佈於基板上而形成光阻膜；於加熱處理後以高能射線將該光阻膜曝光；進行在每1kg乾燥空氣之水分量為10g以上之高濕度環境下進行加熱處理的曝光後烘烤；及使用有機溶劑顯影液形成負圖案。

Compound for moulding lens precursor

FIELD: physics, optics. SUBSTANCE: invention relates to a method of moulding a lens precursor. According to the method, the first part of a lens precursor is prepared by polymerising a polymer reaction mixture using actinic radiation. The first part has the first concave surface with an optical quality and the opposite second surface with a non-optical quality. A fluid lens-forming reaction medium, which is adjacent to at least a portion of the first part, is provided. The combination of the first part and the fluid lens-forming reaction medium is placed in a chamber containing a gaseous phase. The fluid lens-forming reaction medium is subjected to steam in the chamber. Material is fed into the gaseous medium. The material in the gaseous medium is allowed to react with the lens-forming reaction medium so as to change properties of at least a portion of the lens-forming reactive medium. After changing the said properties, the lens-forming reaction medium is polymerised to form the second concave surface with optical qualities. EFFECT: high quality of the obtained products. 9 cl, 6 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК B29D 11/00 (13) 2 579 396 C2 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2012143609/05, 10.03.2011 (24) Дата начала отсчета срока действия патента: 10.03.2011 Приоритет(ы): (30) Конвенционный приоритет: (43) Дата публикации заявки: 20.04.2014 Бюл. № 11 (45) Опубликовано: 10.04.2016 Бюл. № 10 (73) Патентообладатель(и): ДЖОНСОН ЭНД ДЖОНСОН ВИЖН КЭА, ИНК. (US) (85) Дата начала рассмотрения заявки PCT на национальной фазе: 12.10.2012 2 5 7 9 3 9 6 (56) Список документов, цитированных в отчете о поиске: SU 614752 A3, 05.07.1978. EA 1397 B1, 26.02.2001. EP 0496544 A2, 29.07.1992. US 2009053351 A1, 26.02.2009. GB 620317 A, 23.03.1949. R U 12.03.2010 US 12/722,820 (72) Автор(ы): ЭННС Джон Б. (US), УИДМЭН Майкл Ф. (US), ВУД Джо М. (US), ПАУЭЛЛ П. Марк (US), КИНДТ-ЛАРЗЕН Туре (DK) ( ...

Treatment of water-dilutable lacquer coating, especially aqueous acrylate dispersion, on pre-conditioned wood, is carried out in acetic acid vapor at saturation vapor pressure after the surface has dried but while the coating is still soft

Increase of the wet adhesion of coatings of water-dilutable lacquers, especially aqueous acrylate dispersions, to wood after hardening comprises applying the coating to pre-conditioned wood, followed by treatment with acetic acid vapor at the saturation vapor pressure after the surface has dried but whilst the coating is still soft.

PROCESS FOR PRODUCING A SHAPED ARTICLE HAVING AN INCREASED ANTI-REFLECTIVE EFFECT

UN PROCEDE POUR PRODUIRE UN ARTICLE FACONNE TRANSPARENT AYANT UN EFFET ANTIREFLET ACCRU CONSISTE A TRAITER AVEC UN GAZ ACTIVE LA SURFACE D'UN ARTICLE FACONNE TRANSPARENT AYANT UNE COUCHE SUPERFICIELLE CONTENANT UNE SUBSTANCE MINERALE DIVISEE EN PARTICULES FINES AYANT UNE TAILLE MOYENNE DES PARTICULES D'ENVIRON 1 A 300NM; SI L'ON DESIRE ON REVET D'UNE MATIERE PROTECTRICE DE REVETEMENT L'ARTICLE FACONNE TRANSPARENT TRAITE PAR LE GAZ ACTIVE. A PROCESS FOR PRODUCING A TRANSPARENT FORMED ARTICLE HAVING AN INCREASED ANTI-REFLECTIVE EFFECT CONSISTS OF TREATING WITH AN ACTIVE GAS THE SURFACE OF A TRANSPARENT FORMED ARTICLE HAVING A SURFACE LAYER CONTAINING A MINERAL SUBSTANCE DIVIDED INTO FINE PARTICLES HAVING AN AVERAGE SIZE OF 1 AVERAGE At 300NM; IF DESIRED, WE COVER WITH A PROTECTIVE COATING MATERIAL THE TRANSPARENT FORM TREATED BY ACTIVE GAS.

Method for coating a substrate with a lacquer and device for planarising a lacquer layer

本發明關於一種用於以塗漆塗佈基板(26)的方法，其包含下列的步驟：- 將塗漆均勻地施加到基板(26)，- 降低被施加到基板(26)的塗漆(30)的溶劑比例，- 使被塗佈的基板(26)暴露在溶劑氣氛。 本發明亦關於用於使塗漆層平坦化的裝置。

Low friction wear resistant graphene films

A low friction wear surface with a coefficient of friction in the superlubric regime including graphene and nanoparticles on the wear surface is provided, and methods of producing the low friction wear surface are also provided. A long lifetime wear resistant surface including graphene exposed to hydrogen is provided, including methods of increasing the lifetime of graphene containing wear surfaces by providing hydrogen to the wear surface.

Equipment for vapor phase processed ophthalmic devices

A method of coating a substrate with lacquer and a device for flattening a lacquer layer

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

Esterified lignocellulosic materials and methods for making them

Esterified lignocellulosic materials and methods for making them

A kind of agricultural equipment gearbox paint line and its coating process

本发明公开了一种农业装备变速箱涂装线包括上线区、清洗区、烘干区、喷漆区、流平区、面漆干燥区、下线区、轨道、涂装流水线链条、吊具组件和驱动电机；上线区、清洗区、烘干区、喷漆区、流平区、面漆干燥区和下线区依次相连，轨道固定设置在整个农业装备变速箱涂装线顶部，涂装流水线链条与驱动电机连接，涂装流水线链条与轨道连接在驱动电机的驱动下涂装流水线链条沿轨道运动，若干个吊具组件固定在涂装流水线链条上，在上线区将变速箱通过吊具组件吊装。其结构合理、操作轻便、涂装效果好、漆面附着力高，能够满足使用要求的农业装备变速箱涂装线及其涂装方法。

Apparatus for vapor phase processing ophthalmic devices

This invention discloses apparatus for processing one or more of a Lens Precursor (201), a Lens Precursor Form and an ophthalmic Lens. The apparatus comprises a mandrel (212) and a chamber (203) enclosing a vapor phase environment around the Lens Precursor.

Method for generating glow-polymerisate layers

ABSTRACT OF THE DISCLOSURE Starting from hydrocarbons and/or fluorocarbons, glow polymerisate layers can be generated on a substrate by means of a high-frequency lower-pressure glow discharge. Chemically stable layers are obtained if the glow polymerisate is subjected, after the preparation and with the exclusion of air, to an annealing process in an atmosphere of hydrocarbon and/or fluorocarbon monomers at temperatures between 100 and 450°C for 1 to 10 hours, or if the substrate is heated to temperatures between 100 and 450°C during the prepara-tion of the glow polymerisate.

Method for Preparing Porous Polymer Film with Controlled Pore Depth and Porous Polymer Film Prepared by Same

본 발명은 기공 형성 깊이가 제어된 다공성 중합체 필름의 제조방법 및 이로부터 제조된 다공성 중합체 필름에 관한 것으로서, 본 발명에 따른 다공성 중합체 필름의 제조방법은 간단하고 저비용으로 다공성 필름의 기공 형성 깊이를 제어할 수 있기 때문에 제조된 필름의 광반사율을 조절할 수 있다. 또한, 간단한 방법을 통해 대면적 필름의 제작이 가능하기 때문에 다양한 산업분야에 적용될 수 있으며, 서로 다른 반사율을 가진 필름의 제조가 가능하기 때문에 태양전지를 위한 저반사, 고반사 필름 뿐만 아니라 향후 건축 분야 또는 자재 설비 분야에서 저반사 또는 고반사의 박막 중합체 필름으로 적용이 가능하다. The present invention relates to a method for producing a porous polymer film with controlled pore formation depth and a porous polymer film prepared therefrom. The method for producing a porous polymer film according to the present invention is simple and low-cost to control the pore formation depth of the porous film. It is possible to control the light reflectance of the prepared film. In addition, since it is possible to manufacture a large-area film through a simple method, it can be applied to various industrial fields, and since it is possible to manufacture films with different reflectance, not only low-reflection and high-reflection films for solar cells, but also in the future construction field Alternatively, it can be applied as a low-reflection or high-reflection thin film polymer film in the field of material equipment.

Esterified lignocellulosic materials and methods for making them.

Se divulgan métodos para hacer materiales lignocelulósicos esterificados y composiciones y artículos resultantes.

Rf plasma-enhanced deposition of fluorinated films

Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps, hi the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface, hi a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content, hi some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

Method for processing a mask substrate to enable better film quality

本揭示案提供用於在膜堆疊中形成材料層的方法以用於製造EUV應用及相移及二元光遮罩應用中的光遮罩。在一個範例中，在一基板上形成一介電材料的方法包含以下步驟：在一處理腔室中在一基板上供應一含氧氣體混和物，該基板包括設置於一光學透明含矽材料上的一介電材料；在該處理腔室中在大於2 bar的一處理壓力下維持該含氧氣體混和物；及在該含氧氣體混和物出現時熱處置該介電材料。

Self-assembled structure and membrane comprising block copolymer and process for producing the same by spin coating (iiia)

Disclosed are self-assembled structures formed from self-assembling diblock copolymers of the formula (I):

APPARATUS FOR PROCESSING OPHTHALMIC DEVICES IN STEAM PHASE

Esta invencion describe un aparato para procesar uno o más de un precursor de lente, una forma de precursor de lente y una lente oftálmica. El aparato posibilita el procesamiento en fase de vapor del precursor de lente, forma de precursor de lente y una lente oftálmica de la invencion. Reivindicacion 1: Un aparato para procesar un precursor de lente; el aparato comprende: un mandril con una superficie para soportar el precursor de lente; y una cámara que encierra un entorno de fase de vapor proximo a la superficie del mandril. This invention describes an apparatus for processing one or more of a lens precursor, a form of a lens precursor and an ophthalmic lens. The apparatus enables the vapor phase processing of the lens precursor, lens precursor form and an ophthalmic lens of the invention. Claim 1: An apparatus for processing a lens precursor; The apparatus comprises: a mandrel with a surface to support the lens precursor; and a chamber that encloses a vapor phase environment close to the surface of the mandrel.

Methods for processing mask substrates to enable better film quality

본 개시내용은 EUV 응용들 및 위상 변위 및 이진 포토마스크 응용들에서 포토마스크를 제조하기 위해 막 스택에 물질 층을 형성하기 위한 방법들을 제공한다. 일 예에서, 기판 상에 유전체 물질을 형성하기 위한 방법은 산소 함유 가스 혼합물을 처리 챔버의 기판 상에 공급하는 단계 ― 기판은 광학적으로 투명한 규소 함유 물질 상에 배치된 유전체 물질을 포함함 ―, 처리 챔버의 산소 함유 가스 혼합물을 2 bar 초과의 프로세스 압력으로 유지하는 단계, 및 산소 함유 가스 혼합물의 존재 하에 유전체 물질을 열 처리하는 단계를 포함한다. The present disclosure provides methods for forming a material layer in a film stack to fabricate a photomask for EUV applications and phase shift and binary photomask applications. In one example, a method for forming a dielectric material on a substrate includes supplying an oxygen-containing gas mixture onto a substrate in a processing chamber, the substrate comprising a dielectric material disposed on an optically transparent silicon-containing material, processing maintaining the oxygen-containing gas mixture in the chamber at a process pressure of greater than 2 bar, and thermally treating the dielectric material in the presence of the oxygen-containing gas mixture.

The formation method of Strong dielectric film formation composition, Strong dielectric film and the Strong dielectric film formed by the method

用于形成选自PLZT、PZT及PT的1种强电介质薄膜的、本发明的强电介质薄膜形成用组合物是用于形成采取混合复合金属氧化物形态的薄膜的液态组合物，所述混合复合金属氧化物是在通式（1）：（Pb x La y ）（Zr z Ti （1－z） ）Ｏ 3 （式（1）中0.9＜x＜1.3、0≦y＜0.1、0≦z＜0.9）表示的复合金属氧化物A中混合了复合氧化物B或通式（2）C n H 2n＋1 COOH（其中，3≦n≦7）表示的羧酸B得到的，复合氧化物B含有选自P（磷）、Si、Ce及Bi的1种或2种以上、选自Sn、Sm、Nd及Y（钇）的1种或2种以上。

Method and apparatus for forming structures of polymer nanobeads

The disclosure relates to providing printed structures of polymer that have substantially flat printed surfaces. In one embodiment, the disclosure relates to a post-printing treatment apparatus for receiving a substrate supporting a polymer printing thereon. The polymer can be PMMA or other suitable polymer. In a related embodiment, the polymer defines a thermoplastic polymer having a glass transition temperature. The apparatus can comprise of a chamber, and input manifold, an exhaust manifold, a solvent reservoir and a gas reservoir. The solvent reservoir provides one or more solvent systems adapted to chemically bind, and potentially react, with the polymer. The gas reservoir provides one or more gases for drying the substrate and printed polymer after the solvent treatment step. In one application, a substrate having printed surface thereon is placed in the chamber and exposed to the solvent system for sufficient period of time to provide substantially flat print surfaces.

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (Pb x La y )(Zr z Ti (1-z) )O 3 [wherein 0.9 < x < 1.3, 0 ≤y < 0.1, and 0 ≤z < 0.9 are satisfied] with a composite oxide (B). The composite oxide (B) includes one or more elements selected from the group consisting of Si and Bi.

Method for forming oxide film and apparatus for forming oxide film

An apparatus for spraying a ceramic precursor solution onto the surface of an Nd--Fe--B system permanent magnetic material, and a method for forming a ceramic layer on the surface of the Nd--Fe--B system permanent magnetic material.

Hybrid topographical and chemical precursors for the self-assembly of block copolymers

Hybride Vorstrukturen wurden zur geführten Selbstorganisation eines bestimmten Block-Copolymers hergestellt, das dazu ausgestaltet ist, eine lamellare Bereichsstruktur zu bilden. Die hybriden Vorstrukturen haben obere Oberflächen, die unabhängige erhöhte Oberflächen durchsetzt mit angrenzenden vertieften Oberflächen aufweisen. Die erhöhten Oberflächen sind für die durch Selbstorganisation gebildeten Bereiche neutral-benetzend. Das Material unter den erhöhten Oberflächen weist in einem bestimmten Ätzprozess einen höheren Ätzwiderstand als das Material unter den vertieften Oberflächen auf. Unter Berücksichtigung anderer abmessungsbezogenen Randbedingungen der hier beschriebenen hybriden Vorstruktur wurde eine Schicht des bestimmten Block-Copolymers auf der hybriden Vorstruktur ausgebildet. Die Selbstorganisation der Schicht erzeugte eine lamellare Bereichsstrukur, die selbst-ausgerichtete, unidirektionale, senkrecht ausgerichtete Lamellen über den erhöhten Oberflächen und parallel und/oder senkrecht ausgerichtete Lamellen über vertieften Oberflächen aufwies. Die dargestellten Bereichsstrukturen besitzen eine großräumige Ordnung und sind entlang der Hauptachse der Vorstruktur angeordnet. Die lamellaren Bereichsstrukturen sind zur Bildung von Übertragungsstrukturen zweckdienlich, die zweidimensionale angepasste Merkmale aufweisen. Hybrid precursors have been prepared for guided self-assembly of a particular block copolymer designed to form a lamellar region structure. The hybrid substructures have upper surfaces that have independent raised surfaces interspersed with adjacent recessed surfaces. The raised surfaces are neutral-wetting for the areas formed by self-assembly. The material under the raised surfaces has a higher etch resistance in a given etching process than the material under the recessed surfaces. Taking into account other dimensional constraints of the hybrid pre-structure described herein, a layer of the particular block copolymer was formed on the ...

Method for manufacturing a semiconductor device comprising a layer of low-k dielectric material

提供用于制造包括低k介电材料层的半导体器件的方法，其包括在包括半导体衬底的下部结构上形成具有第一开口的第一图案结构。第一图案结构包括堆叠图案和覆盖堆叠图案的至少一个侧表面的第一间隔体层。包括SiOCH材料的第一能流动材料层形成在第一间隔体层上以填充第一开口并覆盖第一图案结构的上部部分。对第一能流动材料层进行包括将气态氨催化剂供应到第一能流动材料层中的第一固化工艺以形成包括水的第一固化材料层。对第一固化材料层进行第二固化工艺以形成第一低k介电材料层。将第一低k介电材料层平坦化以形成平坦化的第一低k介电材料层。

Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH 2 — moieties, either as terminal groups (—SiH 3 R) or embedded in a carbosilane cyclic compound, wherein R is H, a C 1 -C 6 linear, branched, or cyclic alkyl- group, a C 1 -C 6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Method of treating a resinous coating to wrinkle it and article resulting therefrom

Amine curing silicon-nitride-hydride films

Method and apparatus for processing organosiloxane film

A method and an apparatus for processing an organosiloxane film is disclosed which enables to obtain an interlayer insulating film with a low dielectric constant by a thermal treatment at a low treatment temperature. A semiconductor wafer (10) onto which a coating film is applied is loaded into a reaction tube (2) of a thermal treatment apparatus (1). After stabilizing the inside of the reaction tube (2) at a certain pressure, hydrogen is introduced into an inner tube (3) through an acid gas-introducing tube (13) and the coating film is heated in an acidic atmosphere. Next, the temperature within the reaction tube (2) is raised to a certain point, and the coating film of the semiconductor wafer (10) is heated in an acidic atmosphere. Then, after exhausting the gas from the reaction tube (2), ammonia is introduced into the inner tube (3) through an alkaline gas-introducing tube (14) and the coating film is heated in an alkaline atmosphere.

Method of providing a layer including a metal or silicon or germanium and oxygen on a surface

A method of providing a layer including a metal or silicon or germanium and oxygen on a surface, the method including the steps of forming an adsorbed layer less than 12 monolayers thick on the surface by exposing it to a liquid or vapor containing metal-, silicon-, or germanium-containing organic molecules, and treating this layer by exposure to a glow discharge in an oxygen containing gas, thereby converting the adsorbed layer to a layer including silicon (or germanium) and oxygen.

Curable formulations for forming low-k dielectric silicon-containing films using polycarbosilazanes

シラザンブリッジカルボシランモノマーからなるポリカルボシラザンポリマー又はオリゴマー配合物を含有するケイ素炭素含有膜形成組成物であって、カルボシランが、末端基（－ＳｉＨ ３ Ｒ）（式中、Ｒは、Ｈ、Ｃ １ ～Ｃ ６ の直鎖、分岐、若しくは環状アルキル基、Ｃ １ ～Ｃ ６ の直鎖、分岐、若しくは環状アルケニル基、又はこれらの組み合わせである）としての、又はカルボシラン環状化合物に埋め込まれたものとしての、少なくとも２つの－ＳｉＨ ２ －部位を含む、ケイ素炭素含有膜形成組成物が開示される。ポリカルボシラザンポリマー又はオリゴマー配合物を含む溶液を形成すること、スピンオンコーティング、スプレーコーティング、ディップコーティング、又はスリットコーティング技術により溶液を基板と接触させてケイ素炭素含有膜を形成すること、を含むケイ素炭素含有膜の形成方法も開示される。 【選択図】図１

Apparatus for vapor phase processing ophthalmic devices

This invention discloses apparatus for processing one or more of a Lens Precursor (201), a Lens Precursor Form and an ophthalmic Lens. The apparatus comprises a mandrel (212) and a chamber (203) enclosing a vapor phase environment around the Lens Precursor.

Method and apparatus for forming structures of polymer nanobeads

The disclosure relates to providing printed structures of polymer that have substantially flat printed surfaces. In one embodiment, the disclosure relates to a post-printing treatment apparatus for receiving a substrate supporting a polymer printing thereon. The polymer can be PMMA or other suitable polymer. In a related embodiment, the polymer defines a thermoplastic polymer having a glass transition temperature. The apparatus can comprise of a chamber, and input manifold, an exhaust manifold, a solvent reservoir and a gas reservoir. The solvent reservoir provides one or more solvent systems adapted to chemically bind, and potentially react, with the polymer. The gas reservoir provides one or more gases for drying the substrate and printed polymer after the solvent treatment step. In one application, a substrate having printed surface thereon is placed in the chamber and exposed to the solvent system for sufficient period of time to provide substantially flat print surfaces.

Method and apparatus for processing organosiloxane film

There is provided a method and apparatus for processing an organosiloxane film, which allow an inter-level insulating film with a low dielectric constant to be formed at a low heat process temperature. A semiconductor ( 10 ) with a coating film formed thereon is loaded into a reaction tube ( 2 ) of a heat-processing apparatus ( 1 ). Then, the interior of the reaction tube ( 2 ) is stabilized at a predetermined pressure, and hydrogen is supplied into an inner tube ( 3 ) through an acidic gas feed line ( 13 ), to heat the coating film under an acidic atmosphere. Then, the interior of the reaction tube ( 2 ) is heated up to a predetermined temperature, while heating the coating film under an acidic atmosphere. Then, gas inside the reaction tube ( 2 ) is exhausted, and ammonia is supplied into the inner tube ( 3 ) through an alkaline gas feed line ( 14 ), to heat the coating film under an alkaline atmosphere.

ETERIFIED LIGNO CELLULAR MATERIALS AND METHODS FOR PRODUCING THEM

1. Способ, включающий:пропитывание твердого лесоматериала пропитывающей жидкостыо, содержащей уксусный ангидрид с получением пропитанного твердого лесоматериала, иконтактирование пропитанного твердого лесоматериала с нагретым паром для нагревания пропитанного твердого лесоматериала с получением ацетилированного твердого лесоматериала, в котором пар включает ацетильное соединение, выбранное из уксусного ангидрида или уксусной кислоты, причем ацетильное соединение присутствует в паре в количестве, составляющем, по меньшей мере, 50 масс.% и твердый лесоматериал имеет размеры, составляющие, по меньшей мере, 30 дюймов (76,2 см) в одном направлении, по меньшей мере, 1/4 дюйма (0,635 см) в двух других направлениях.2. Способ по п.1, в котором твердый лесоматериал имеет размеры, составляющие, по меньшей мере, 30 дюймов (76,2 см) в одном направлении, по меньшей мере, 5 дюймов (12,7 см) во втором направлении и, по меньшей мере, 1/2 дюйма (1,27 см) в третьем направлении.3. Способ по п.1, в котором пропитывающая жидкость дополнительно содержит уксусную кислоту.4. Способ по п.1, в котором ацетильное соединение представляет собой уксусный ангидрид.5. Способ по п.4, в котором нагретый пар дополнительно содержит уксусную кислоту.6. Способ по п.4, в котором уксусный ангидрид присутствует в нагретом паре в количестве, составляющем, по меньшей мере, 75 мас.%.7. Способ по п.4, в котором уксусный ангидрид присутствует в нагретом паре в количестве, составляющем, по меньшей мере, 90 мас.%.8. Способ по п.1, в котором ацетильное соединение представляет собой уксусную кислоту.9. Способ по п.8, в котором нагретый пар дополнительно содержит уксусный ангидрид.10. Способ по п.8, в ко�

Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation

A method for repairing process-related damage of a dielectric film formed on a substrate caused by processing the dielectric film includes: irradiating the damaged dielectric film with UV light in an atmosphere of hydrocarbon-containing gas to restore the surface of the dielectric film; and irradiating the surface-restored dielectric film with UV light in an atmosphere of oxygen gas to partially remove the hydrocarbon film.

Nanoporous antireflection thin film and method of producing the same using block copolymers

Disclosed herein is a method of producing an antireflection thin film using a block copolymer and an antireflection thin film prepared by the method. Specifically, the present invention relates to a method of producing a nanoporous antireflection film by spin-coating using a block copolymer solution and subsequent processing and a preparation by the method. The antireflection film of the present invention is prepared by coating a substrate with a block copolymer and selectively removing at least one block in the coated block copolymer to produce a nanoporous thin film with a pore size of 5 to 100 nm. When the thin film is applied to a substrate, an antireflection substrate which has a very low reflectance within a broad range of wavelength can be prepared.

Method of forming semiconductor device including low-k dielectric material layer

저유전체 물질 층을 포함하는 반도체 소자 형성 방법을 제공한다. 이 반도체 소자 형성 방법은 하부 구조물 상에 개구부를 갖는 구조물을 형성하고; 상기 개구부를 채우며 상기 구조물의 상부를 덮는 유동성 물질 층을 형성하고; 제1 큐어링 공정을 진행하여, 상기 유동성 물질 층을 경화 물질 층으로 형성하고; 제2 큐어링 공정을 진행하여, 상기 경화 물질 층을 저유전체 물질 층으로 형성하고; 및 상기 저유전체 물질 층을 평탄화하여 상기 개구부 내에 한정되는 평탄화된 저유전체 물질 층을 형성하는 포함한다. 상기 유동성 물질 층을 상기 경화 물질 층으로 형성하면서 발생하는 부피 감소율은 상기 경화 물질 층을 상기 저유전체 물질 층으로 형성하면서 발생하는 부피 감소율 보다 작다.

Oxide film forming method and oxide film forming apparatus

本発明は、大気の変動の影響を受けず常に酸化膜を正常に成膜でき、金属酸化膜にあっては低抵抗な膜が成膜でき、かつ成膜効率の良い、酸化膜成膜方法を提供する。そして、本発明では、大気中において、基板（１００）に対して、アルキル化合物を含む原料溶液をミスト状にして噴出させる。さらに、アルキル化合物に対して酸化作用を有する酸化剤を、ミスト状の原料溶液に対して、供給する。以上の処理により、本発明では、基板上に酸化膜を成膜する。 INDUSTRIAL APPLICABILITY The present invention is a method for forming an oxide film, in which an oxide film can be normally formed normally without being affected by atmospheric fluctuations, a low resistance film can be formed as a metal oxide film, and film formation efficiency is high. I will provide a. In the present invention, in the atmosphere, the raw material solution containing the alkyl compound is ejected in the form of a mist to the substrate (100). Furthermore, an oxidizing agent having an oxidizing action on the alkyl compound is supplied to the mist-like raw material solution. Through the above processing, in the present invention, an oxide film is formed on the substrate.

Process for coating a substrate with a lacquer and device for planarizing a lacquer layer

Die Erfindung betrifft ein Verfahren zum Beschichten eines Substrats (26) mit einem Lack, mit den folgenden Schritten: – der Lack wird gleichmäßig auf das Substrat (26) aufgebracht, – der Lösungsmittelanteil des auf dem Substrat (26) aufgebrachten Lackes (30) wird verringert, – das beschichtete Substrat (26) wird einer Lösungsmittelatmosphäre ausgesetzt. Die Erfindung betrifft ferner eine Vorrichtung zum Planarisieren einer Lackschicht. The invention relates to a method for coating a substrate (26) with a lacquer, comprising the following steps: - the lacquer is uniformly applied to the substrate (26), - the solvent content of the lacquer (30) applied to the substrate (26) becomes reduced, - the coated substrate (26) is exposed to a solvent atmosphere. The invention further relates to a device for planarizing a lacquer layer.

Apparatus for vapor phase processing ophthalmic devices

Abstract: This invention discloses apparatus for processing one or more of a Lens Precursor, a Lens Precursor Form and an ophthalmic Lens. The apparatus comprises a mandrel and a chamber enclosing a vapour phase 5 environment around the Lens Precursor. Document3 (145 150

Wall coating method for thin textured finishes by carbon dioxide

A method for forming a thin coating film by using carbon dioxide gas is provided to improve the peel or lifting resistance, waterproofing property and adhesion of a waterproof coating layer, particularly in a floor or wall of a swimming pool or bathroom. A method for forming a thin coating film by using carbon dioxide gas comprises a step of spraying carbon dioxide gas onto a coating film formed by a silicate-containing paint at room temperature within 4 hours before the coating film is dried. The carbon dioxide gas is selected from gas filled in a gas container or dry ice. The silicate is at least one or more selected from sodium silicate, potassium silicate, lithium silicate and aluminum sodium silicate, and is added in an amount of 1-10 wt% based on the total weight of the paint.

Methods for enhancing the preservation of cellulosic materials and cellulosic materials prepared thereby

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby.

Modification of indirect-fired paint curing oven atmospheric environment through the introduction of gas combustion products

A system for thermally treating components includes an indirect-fired oven, the indirect-fired oven having an internal chamber configured to house the components and an air intake in fluid communication with the internal chamber. A source of heat is disposed external to the internal chamber of the indirect-fired oven, and a combustion source is disposed external to the internal chamber of the indirect-fired oven and is configured to generate gas combustion products. An exhaust line is in fluid communication with the internal chamber of the indirect-fired oven, and the gas combustion products are introduced into the internal chamber of the indirect-fired oven.

Preparation device and method of ceramic coating on a sintered type NdFeB permanent magnet

The disclosure relates to a preparation device and method of forming a ceramic coating on a sintered type NdFeB permanent magnet. The preparation device comprises a holding barrel, a pump body, a spraying system, and a fixture mechanism. The pump body is connected with the holding barrel and the spraying system and the spraying system is located above the fixture mechanism and there is a distance between the spraying system and the fixture mechanism. The fixture mechanism is connected with a recovery bucket through a pipeline, and the recovery bucket is connected with the holding barrel through the pipeline. The spraying system comprises a nozzle, wherein the inlet of the nozzle is connected with the pipeline of the pump body. The fixture mechanism comprises a support plate, an upper recovery trough plate and a lower recovery trough plate, wherein the lower recovery trough plate is located above the support plate.

用于使用聚碳硅氮烷形成低k介电含硅膜的可固化配制品

披露了形成含硅和碳的膜的组合物，这些组合物包含由硅氮烷桥联的碳硅烷单体组成的聚碳硅氮烷聚合物或低聚物配制品，该碳硅烷含有至少两个‑SiH 2 ‑部分，作为末端基团(‑SiH 3 R)或嵌于碳硅烷环状化合物中，其中R为H、C 1 至C 6 直链或支链烷基、C 3 至C 6 环状烷基、C 2 至C 6 直链或支链烯基、C 3 至C 6 环状烯基、或其组合。还披露了形成含硅和碳的膜的方法，这些方法包括以下步骤：形成包含聚碳硅氮烷聚合物或低聚物配制品的溶液，并且通过旋涂、喷涂、浸涂或狭缝涂布技术使该溶液与该基底接触以形成该含硅和碳的膜。

ポリカルボシラザンを使用してｌｏｗ－ｋ誘電体ケイ素含有膜を形成するための硬化性配合物

より優れた膜品質を可能にするためにマスク基板を処理する方法

Iron pyrite thin films from molecular inks

Systems and methods are provided for fabricating pyrite thin films from molecular inks. A process is provided that comprises dissolving simple iron-bearing and sulfur-bearing molecules in an appropriate solvent and then depositing the solution onto an appropriate substrate using one of several methods (roll-to-roll coating, spraying, spin coating, etc.), resulting in a solid film consisting of the molecules. These molecular precursor films are then heated to 200-600° C. in the presence of sulfur-bearing gases (e.g., S 2 , H 2 S) to convert the molecular films into films of crystalline iron pyrite (FeS 2 ).

引入气体燃烧产物对间接火烤涂料固化炉大气环境的改造

本公开提供了“引入气体燃烧产物对间接火烤涂料固化炉大气环境的改造”。一种用于热处理部件的系统包括间接火烤炉，所述间接火烤炉具有被配置为容纳所述部件的内部腔室和与所述内部腔室流体连通的进气口。热源设置在所述间接火烤炉的所述内部腔室的外部，并且燃烧源设置在所述间接火烤炉的所述内部腔室的外部并且被配置为生成气体燃烧产物。排气管线与所述间接火烤炉的所述内部腔室流体连通，并且所述气体燃烧产物被引入所述间接火烤炉的所述内部腔室中。

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