Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год

Применить Всего найдено 4226. Отображено 199.
27-01-2011 дата публикации

Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen

Номер: DE102009033206A1
Принадлежит:

Beschrieben werden ein Verfahren und eine Vorrichtung zum Polieren und zur Formgebung von Werkstückoberflächen, bei dem die Maßabweichungen von der gewünschten Geometrie ermittelt werden, eine elastische Oberfläche (19) auf die Werkstückoberfläche (14) aufgesetzt wird und die Werkstückoberfläche durch Erzeugen eines Druckes der elastischen Oberfläche auf die Werkstückoberfläche und Bewegen der elastischen Oberfläche und der Werkstückoberfläche relativ zueinander poliert wird. Dabei ist das Material der elastischen Oberfläche so gewählt, dass es eine dynamische Abhängigkeit in der Art aufweist, dass die Kraft, welche notwendig ist, um eine zeitlich variierende Deformation in dem Material zu erzeugen, für rasche Deformationen größer ist als für langsame Deformationen.

Подробнее
14-08-2003 дата публикации

Poliervorrichtung mit Verriegelungsfunktion

Номер: DE0069715726T2
Принадлежит: EBARA CORP, EBARA CORP., TOKIO/TOKYO

Подробнее
14-06-1995 дата публикации

Determining critical surface characteristics of mounting films for semiconductor wafers

Номер: GB0002284707A
Принадлежит:

A method of improving the yield and achievable tolerances of integrated circuits by obtaining surface measurements of non-reflective soft mounting films used in integrated circuit manufacture. The non-reflective surface of a mounting film (14) is first rendered reflective by applying a reflective wafer (16) atop the film surface. This reflective test wafer, which is highly plano-parallel and preferably has a thickness less than that of the ultimate product wafer, is applied to the mounting film to be measured via direct pressure whereby the reflective test wafer conforms to and takes on the surface characteristics and contours of the film. The formerly non-reflective surface of the mounting film is thereby rendered effectively reflective and thus susceptible to optical profiling by a computerized interferometer in accordance with well-known techniques. The mounting film may then be critically applied during integrated circuit manufacture, during initial wafer forming and/or during chemo-mechanical ...

Подробнее
12-10-2016 дата публикации

Method and apparatus for monitoring abrasive machining

Номер: GB0201614685D0
Автор:
Принадлежит:

Подробнее
15-08-2008 дата публикации

DEVICE AND PROCEDURE FOR POSITIONING ELECTRONIC CHIPS

Номер: AT0000403522T
Принадлежит:

Подробнее
15-07-2011 дата публикации

DEVICE FOR THE CLEANING OF A SEMICONDUCTOR WAFER

Номер: AT0000515373T
Принадлежит:

Подробнее
31-08-1994 дата публикации

Mechanism at a two-disk honing-lapping machine.

Номер: CH0000684321A5
Принадлежит: STAEHLI ARTHUR WERNER, ARTHUR WERNER STAEHLI

Подробнее
10-10-2012 дата публикации

Real-time monitoring of retaining ring thickness and lifetime

Номер: CN102725830A
Принадлежит:

A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, an apparatus is provided. The apparatus includes a carrier head movable in a travel path between at least one polishing station for polishing a substrate as the substrate is retained in the carrier head, and a transfer station for transferring the substrate to and from the carrier head, the carrier head having a retaining ring, and a sensor disposed in the travel path of the carrier head, the sensor operable to provide a metric indicative of a condition of the retaining ring.

Подробнее
14-01-2015 дата публикации

POLISHING METHOD AND POLISHING APPARATUS

Номер: CN104282533A
Принадлежит:

A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion.

Подробнее
25-08-2017 дата публикации

The substrate holding device and grinding device

Номер: CN0103817589B
Автор:
Принадлежит:

Подробнее
03-01-1967 дата публикации

Honing machine

Номер: FR0001455729A
Автор:
Принадлежит:

Подробнее
11-04-2019 дата публикации

Номер: KR0101968467B1
Автор:
Принадлежит:

Подробнее
08-06-2017 дата публикации

구멍을 가진 폴리싱 패드

Номер: KR0101744581B1
Принадлежит: 넥스플래너 코퍼레이션

... 본 발명은 구멍을 가진 폴리싱 패드를 개시한다. 본 발명은 또한 구멍을 가진 폴리싱 패드를 제조하는 방법을 기술한다.

Подробнее
05-03-2018 дата публикации

제거 프로파일을 생성하기 위한 폴리싱 파라미터들의 선택

Номер: KR0101834711B1

... 기판 상에 독립적으로 제어가능한 압력들을 인가하기 위해 복수의 구역을 갖는 캐리어 헤드를 포함하는 화학적 기계적 폴리싱 시스템의 복수의 제어가능한 파라미터에 대한 값들이 선택된다. 기판의 정면 표면 상의 제거 프로파일에서의 변동을 제어가능한 파라미터들에서의 변동에 관련시키는 데이터가 저장되고, 데이터는 기판의 정면 표면 상의 복수의 위치에서의 제거를 포함하고, 챔버보다 많은 수의 위치가 존재한다. 타겟 제거 프로파일과, 기판의 정면 표면 상의 제거 프로파일에서의 변동을 파라미터들에서의 변동에 관련시키는 데이터로부터 계산된 예상 제거 프로파일 사이의 차이를 최소화하기 위해 복수의 제어가능한 파라미터 중의 각각의 파라미터에 대한 값이 결정된다. 복수의 제어가능한 파라미터 중의 각각의 파라미터에 대한 값이 저장된다.

Подробнее
03-04-2017 дата публикации

CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

Номер: KR101722555B1
Принадлежит: K.C.TECH CO., LTD.

The present invention relates to a chemical mechanical polishing apparatus and method. The chemical mechanical polishing apparatus for polishing the abrasive layer of a substrate includes a polishing pad which the substrate touches in a chemical mechanical polishing process, and a slurry supply part for supplying slurry at different temperatures to the upper surface of the polishing pad in a polishing process where the substrate is polished while touching the polishing pad. Therefore, it is possible to shorten the time required for an initial polishing step where a polishing amount per unit time is kept low and to prevent the overheating of the slurry and ensure polishing uniformity in a main polishing step having a high polishing amount per unit time. COPYRIGHT KIPO 2017 (300) Slurry temperature adjustment part (400) Control part (500) Temperature measurement part ...

Подробнее
17-02-2016 дата публикации

기판을 폴리싱하기 위한 방법 및 장치

Номер: KR1020160018854A
Принадлежит:

... 반도체웨이퍼와 같은 기판을 평면경마무리로 폴리싱하기 위하여 폴리싱방법이 사용된다. 폴리싱장치에 의해 기판을 폴리싱하는 방법에 있어서, 상기 폴리싱장치는 폴리싱면을 갖는 폴리싱테이블(100), 기판을 유지하여 상기 기판을 폴리싱면에 가압하기 위한 톱링(1), 및 상기 톱링(1)을 상하 방향으로 이동시키기 위한 상하이동기구(24)를 포함한다. 상기 톱링(1)은 기판이 폴리싱면에 대하여 가압되기 전에 제1높이로 이동되고, 그 후 상기 톱링(1)은 상기 기판이 폴리싱면에 대하여 가압된 후에 제2높이로 이동된다.

Подробнее
15-05-2006 дата публикации

CMP METHOD USING APPARATUS DEPENDING PARAMETER FOR IMPROVING PRECISION OF CMP, CMP SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: KR1020060043098A
Принадлежит:

PURPOSE: A CMP(Chemical Mechanical Polishing) method, a CMP system and a method of manufacturing a semiconductor device are provided to enhance the precision of CMP by using an apparatus depending parameter. CONSTITUTION: A CMP process is performed a product wafer according to a predetermined value. The predetermined value is calculated by using a calculation formula. The calculation formula is formed by connecting a wafer depending parameter with an apparatus depending parameter using operators. A predetermined polishing condition is determined by using the pre-polished product wafer without the utilization of a dummy wafer. © KIPO 2006 ...

Подробнее
01-06-2019 дата публикации

Grinding device, grinding method, program, and computer storage medium

Номер: TW0201919815A
Принадлежит:

An object of the invention is to improve the flexural strength of a substrate by suitably grinding the rear surface of the substrate. A grinding device which grinds wafers W comprises chucks 200, which hold the wafers W, and ring-shaped grinding wheels 280, 290 and 300, which each contact at least a peripheral portion and center portion of a wafer W held by a chuck 200, and grind the wafer W. A plurality of the chucks 200 and grinding wheels 280, 290, and 300 are provided, such as four for example. An outside diameter D3 of the finishing grinding wheel 300 is larger than the outside diameter D1 of the rough grinding wheel 280 and the outside diameter D2 of the medium grinding wheel 290.

Подробнее
16-03-2015 дата публикации

Polishing method and polishing apparatus

Номер: TW0201509599A
Принадлежит:

A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion.

Подробнее
16-07-2019 дата публикации

Substrate processing apparatus, substrate processing method, and storage medium storing program

Номер: TW0201929095A
Принадлежит:

A substrate processing apparatus includes: a first polishing head configured to polish a first surface of a substrate by sliding a polishing tool on the first surface; a second polishing head configured to polish the first surface of the substrate by sliding a polishing tool on the first surface, the second polishing head having a smaller diameter than a diameter of the first polishing head; and a substrate support mechanism configured to support the substrate by a fluid pressure at positions corresponding to the first polishing head and the second polishing head, the substrate support mechanism being configured to support the substrate from a second surface of the substrate opposite to the first surface.

Подробнее
01-02-2020 дата публикации

Polishing apparatus, method for controlling the same, and method for outputting a dressing condition

Номер: TW0202005748A
Принадлежит:

A polishing apparatus includes: a turntable for supporting a polishing pad; a turntable rotation mechanism configured to rotate the turntable; a dresser configured to dress the polishing pad; and a scanning mechanism configured to cause the dresser to scan between a first position and a second position on the polishing pad, wherein Ttt/Tds and Tds/Ttt are a non-integer where the Ttt is a rotation cycle of the turntable during dressing, and the Tds is a scanning cycle during which the dresser scans between the first position and the second position.

Подробнее
01-05-2021 дата публикации

Dual membrane carrier head for chemical mechanical polishing

Номер: TW202116480A
Принадлежит:

A carrier head for chemical mechanical polishing includes a base assembly and a membrane assembly connected to the base assembly. The membrane assembly includes a membrane support, an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate.

Подробнее
27-04-2017 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: SG10201607236YA
Принадлежит:

Подробнее
29-10-2015 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: SG10201501574SA
Принадлежит:

Подробнее
10-11-2011 дата публикации

DYNAMICALLY OR ADAPTIVELY TRACKING SPECTRUM FEATURES FOR ENDPOINT DETECTION

Номер: WO2011139571A2
Принадлежит:

A method of controlling polishing includes polishing a substrate and receiving an identification of a selected spectral feature, a wavelength range having a width, and a characteristic of the selected spectral feature to monitor during polishing. A sequence of spectra of light from the substrate is measured while the substrate is being polished. A sequence of values of the characteristic of the selected spectral feature is generated from the sequence of spectra. For at least some spectra from the sequence of spectra, a modified wavelength range is generated based on a position of the spectral feature within a previous wavelength range used for a previous spectrum in the sequence of spectra, the modified wavelength range is searched for the selected spectral feature, and a value of a characteristic of the selected spectral feature is determined.

Подробнее
12-01-2012 дата публикации

CLOSED-LOOP CONTROL OF CMP SLURRY FLOW

Номер: WO2012005939A2
Принадлежит:

Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated.

Подробнее
12-12-2013 дата публикации

CMP DEVICE

Номер: WO2013183799A1
Принадлежит:

The present invention relates to a CMP device, and more specifically, to a CMP device comprising: a swing part provided at a fixed interval from a surface plate on which a CMP pad is placed to be conditioned; a connection part of which one end is provided to an upper end of the swing part in a vertical direction with respect to the swing part for rotating on the CMP pad in accordance with the swing part; a rotation part provided to the other end of the connection part for rotating; a CMP pad conditioner coupled to the rotation part for conditioning the CMP pad while rotating; and a vibration acceleration measuring part provided to the connection part for measuring vibration acceleration of the CMP pad conditioner by sensing vibration, wherein an abrasion loss of the CMP pad is predicted by the measured vibration acceleration, and a state in which the CMP conditioner is provided or a state in which the CMP conditioner operates can be predicted.

Подробнее
22-05-2014 дата публикации

RECORDING MEASUREMENTS BY SENSORS FOR A CARRIER HEAD

Номер: WO2014078151A1
Автор: YAVELBERG, Simon
Принадлежит:

A pressure control assembly for a carrier head of a polishing apparatus includes a pressure supply line configured to fluidically connect to a chamber of a carrier head, a sensor to responsive to pressure in the chamber and configured to generate a signal representative of the pressure, and a pneumatic control unit configured to receive the signal, to control a pressure applied to the pressure supply line, and to record the signal in a non-transitory storage media of a storage device removably attached to the pneumatic control unit.

Подробнее
01-11-2012 дата публикации

SELECTION OF POLISHING PARAMETERS TO GENERATE REMOVAL PROFILE

Номер: WO2012148859A3
Принадлежит:

Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

Подробнее
10-11-2011 дата публикации

AUTOMATIC GENERATION OF REFERENCE SPECTRA FOR OPTICAL MONITORING

Номер: WO2011139524A3
Принадлежит:

A computer-implemented method of generating reference spectra includes polishing a first substrate in a polishing apparatus having a rotatable platen, measuring a sequence of spectra from the substrate during polishing with an in-situ monitoring system, associating each spectrum in the sequence of spectra with a index value equal to a number of platen rotations at which the each spectrum was measured, and storing the sequence of spectra as reference spectra.

Подробнее
19-07-2012 дата публикации

GST FILM THICKNESS MONITORING

Номер: WO2012096678A3
Принадлежит:

In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined.

Подробнее
08-03-2001 дата публикации

SPINDLE ASSEMBLY FOR FORCE CONTROLLED POLISHING

Номер: WO0000115862A1
Автор: SALDANA, Miguel, A.
Принадлежит:

L'invention concerne un ensemble (10) broche permettant un réglage de la force dans des applications telles que la planarisation chimique des plaquettes de semiconducteur. Ces ensembles broche comprennent une broche (14) à déplacement axial et rotatif actionné par un dispositif (14) générant une force. Ce dispositif (14) générateur de force est commandé par une boucle (18) d'asservissement de mise en position dans un premier mode de fonctionnement et par une boucle (22) d'asservissement de réglage de force de la broche dans un second mode de fonctionnement, de manière que le même dispositif (14) générateur de force command le mouvement de la broche dans le premier mode de fonctionnement et maintient une pression constante sur une pièce dépendant de la pression appliquée détectée dans le second mode de fonctionnement.

Подробнее
21-11-2019 дата публикации

METHOD OF DETECTING A POLISHING SURFACE OF A POLISHING PAD USING A POLISHING HEAD, AND POLISHING APPARATUS

Номер: US20190351526A1
Принадлежит: Ebara Corporation

A method capable of accurately detecting a polishing surface of a polishing pad using a polishing head without being influenced by passage of time is disclosed. The includes: moving a polishing head in a direction perpendicular to a polishing surface of a polishing pad while applying thrust from the polishing head to the polishing pad; during the movement of the polishing head, detecting deflection of a head arm with a strain sensor, the head arm supporting the polishing head; and determining a position of the polishing head corresponding to a point in time at which an output signal from the strain sensor reaches a preset threshold value.

Подробнее
12-10-2006 дата публикации

Polishing method and apparatus

Номер: US20060228991A1

A chemical mechanical polishing method for polishing an oxide film and a protective film formed on a substrate having recesses comprises four steps. The first step planarizes the oxide film using a polishing pad and a polishing agent containing cerium oxide particles by causing relative rotational motion between the substrate and the polishing pad. The second step continues polishing the oxide film to maintain the planarized property of the oxide film. The third step polishes the oxide film until at least a portion of the protective film becomes exposed. The fourth step polishes the oxide film until the oxide film is substantially removed and the protective film is substantially exposed. During the four steps, torque values are measured on the substrate or the polishing pad, and changes in torque with time are calculated. This information is used to determine the status of each of the steps during the polishing run.

Подробнее
07-08-2001 дата публикации

Chemical mechanical polishing device with a pressure-controlling mechanism

Номер: US0006270397B1
Автор: Hsiao Che Wu, WU HSIAO CHE

The present invention provides a CMP device with a pressure-controlling mechanism comprising a rotating polishing plate, a slurry supplying system for supplying slurry, a rotating carrier that holds and rotates a silicon wafer such that the wafer surface is polished against the rotating polishing plate and the slurry during a CMP process, and a pressure-controlling mechanism capable of exerting different pressures to different locations on the wafer in response to different polishing rates corresponding to each of the specified locations. By utilizing the CMP device according to the present invention, the polishing rate and finish quality at different locations of the silicon wafer will be more uniform, which in turn contributes to an improved wafer planarizing effect.

Подробнее
27-06-2006 дата публикации

Electronic die positioning device and method

Номер: US0007066788B2

An autocollimator is relied upon to orient an electronic die such that its frontside is parallel to a polishing surface. The polishing device is configured such that a beam of light that is projected by the autocollimator is able to reflect off of the backside surface of the die. Measurement off of the backside surface allows the die's parallelism relative to the polishing surface to be established without removing the die from the polishing surface and allows the die's orientation to be monitored and adjusted while the frontside is being deprocessed.

Подробнее
04-12-2018 дата публикации

Automated polishing system and method

Номер: US0010144108B2

An automated polishing system includes a workbench, a transport unit and a polishing unit, wherein the transport unit is provided with a transport surface and a transport drive configured to drive the transport surface to move horizontally, and the polishing unit includes a supporting portion, a holding arm rotatably connected to the supporting portion, a holder connected to the holding arm, a horizontal drive configured to drive the supporting portion to move horizontally, a vertical drive configured to drive the supporting portion to move vertically, a horizontally rotating drive configured to drive the holding arm to rotate in a horizontal direction, a vertically rotating drive configured to drive the holder to rotate in a vertical direction, a polishing shaft, a polishing rotating device configured to drive the polishing shaft, and a polishing drive configured to drive the polishing shaft to move towards the holder for reciprocating motion.

Подробнее
12-11-2020 дата публикации

METHOD OF DOUBLE-SIDE POLISHING WAFER

Номер: US20200353585A1
Принадлежит: SUMCO CORPORATION

Provided is a method of double-side polishing a wafer by which variations of the GBIR values of polished wafers between batches can be reduced. In the method of double-side polishing a wafer, a current batch includes measuring the center thickness of the wafer before polishing (S100); setting a target GBIR value within a predetermined range (S110); calculating a polishing time of the current batch based on Formula (1) (S120); and polishing both surfaces of the wafer for the calculated polishing time (S130). Polishing time of current batch=polishing time of previous batch+A1×(center thickness of wafer before polishing in previous batch−center thickness of wafer before polishing in current batch)+A2×(GBIR value of wafer after polishing in previous batch−target GBIR value)+A3 (1), where A1, A2, and A3are predetermined coefficients.

Подробнее
26-06-2007 дата публикации

Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus

Номер: US0007234999B2
Принадлежит: Ebara Corporation, EBARA CORP, EBARA CORPORATION

A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Подробнее
18-10-2012 дата публикации

DISTANCE MONITORING DEVICE

Номер: US20120264354A1
Принадлежит: NANYA TECHNOLOGY CORPORATION

A distance monitoring device is provided. The device is suitable for a chemical mechanical polishing (CMP) apparatus. A polishing head of the CMP apparatus includes a frame and a membrane. The membrane is mounted on the frame, and a plurality of air bags is formed by the membrane and the frame in the polishing head. The distance monitoring device includes a plurality of distance detectors disposed on the frame corresponding to the air bags respectively to set a location of each of the distance detectors on the frame as a reference point, wherein each of the distance detectors is configured to measure a distance between each of the reference points and the membrane.

Подробнее
04-06-2019 дата публикации

Method and apparatus for polishing a substrate

Номер: US0010307882B2
Принадлежит: EBARA CORPORATION, EBARA CORP

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

Подробнее
28-06-2012 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20120164917A1
Принадлежит:

A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Подробнее
07-08-2018 дата публикации

Polishing apparatus

Номер: US0010040166B2
Принадлежит: EBARA CORPORATION, EBARA CORP

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Подробнее
08-09-2022 дата публикации

CONTROL OF PROCESSING PARAMETERS DURING SUBSTRATE POLISHING USING COST FUNCTION

Номер: US20220281055A1
Принадлежит:

Controlling a polishing system includes receiving from an in-situ monitoring system, for each region of a plurality of regions on a substrate being processed by the polishing system, a sequence of characterizing values for the region. For each region, a polishing rate is determined for the region, and an adjustment is calculated for at least one processing parameter. Calculation of the adjustment includes minimizing a cost function that includes, for each region, i) a difference between a current characterizing value or an expected characterizing value at an expected endpoint time and a target characterizing value for the region, and ii) a plurality of a projected future pressure changes over time for the region and/or a plurality of differences between projected future pressures over time and a baseline pressure for the region.

Подробнее
26-01-2023 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20230026751A1
Принадлежит:

The present invention relates to a polishing apparatus and a polishing method for polishing a workpiece, such as a wafer on which a pattern is formed, on a polishing pad, and more particularly, relates to a polishing apparatus and a polishing method for detecting a geometric element of a pattern, such as a pitch. The polishing apparatus includes: a polishing table (3) configured to support a polishing pad (2); a polishing head (1) configured to press a workpiece (W), having a pattern formed therein, against the polishing pad (2) and polish a surface of the workpiece (W), an imaging device (20) disposed in the polishing table (3) and configured to generate an image including at least the pattern of the workpiece (W), and an image analysis system (30) configured determining a geometric element of the pattern of the workpiece (W) based on the image.

Подробнее
14-03-2024 дата публикации

PROCESSING SYSTEM, PAD TRANSPORTING APPARATUS, LIQUID-RECEIVING APPARATUS, AND POLISHING APPARATUS

Номер: US20240082982A1
Принадлежит:

An improved apparatus for use in replacing a polishing pad is disclosed. processing system includes: a polishing device configured to polish a workpiece; a pad break-in device configured to perform a pad break-in process of a polishing pad; and a pad transporting device configured to transport a pad structure from the pad break-in device to the polishing device. The pad structure includes at least the polishing pad. The pad transporting device includes a liquid receiving tray arranged under the holding hand and configured to receive liquid dropped from the pad structure.

Подробнее
16-02-1998 дата публикации

Номер: JP0002714727B2
Автор:
Принадлежит:

Подробнее
01-10-2018 дата публикации

Номер: RU2015106005A3
Автор:
Принадлежит:

Подробнее
26-11-2020 дата публикации

Verfahren zum Waferpolieren

Номер: DE112014003946B4
Принадлежит: SUMCO CORP, SUMCO CORPORATION

Verfahren zum Polieren eines Wafers, wobei das Verfahren das Durchführen mehrerer Runden eines Polierprozesses umfasst, wobei jede Runde des Polierprozesses das Polieren einer Oberfläche eines Wafers aufweist, bei dem der Wafer in Kontakt mit einem auf einer Oberfläche einer Polierplatte (110) vorgesehenen Poliertuch (112) gebracht wird, und der Wafer und die Polierplatte (110) rotiert werden, und wobei das selbe Poliertuch (112) in den mehreren Runden des Polierprozesses verwendet wird, wobei die mehreren Runden des Polierprozesses umfassen:Polieren eines Dummy-Wafers in einem Anfangspoliermodus, um einen polierten Wafer zu erhalten, der nicht als ein Produkt verwendet wird, undPolieren eines Wafers (104) in einem Produktionsmodus nach dem Anfangspoliermodus, um einen polierten Wafer zu erhalten, der als ein Produkt verwendet wird, und wobeiein Kontaktwinkel des Poliertuchs (112) gemessen wird, und basierend auf dessen Messwert ein Zeitpunkt für ein Umschalten vom Anfangspoliermodus zum ...

Подробнее
10-04-2014 дата публикации

Verfahren zum Polieren von Silizium-Wafern und Poliermittel

Номер: DE112012003180T5

Die vorliegende Erfindung ist auf ein Verfahren zum Polieren eines Siliziumwafers gerichtet, wobei das Verfahren umfasst: Polieren des Siliziumwafers durch Verbringen des Siliziumwafers in rutschenden Kontakt mit einem Polierkissen, das an einem Drehteller angefügt ist, unter Zuführen eines Poliermittels, das in einem Tank gelagert wird, zu dem Polierkissen; und Zirkulieren des Poliermittels in den Tank, um das zugeführte Poliermittel zurückzugewinnen, unter Einstellen einer Konzentration von in dem Poliermittel enthaltenen Silikat-Ionen in dem Tank innerhalb eines bestimmten Bereichs zu sein, während der Siliziumwafer poliert wird. Die vorliegende Erfindung stellt ein Poliermittel mit einer hohen Poliergeschwindigkeit bereit, die ermöglicht, dass die Poliergeschwindigkeit unter Polier-Batches konstant gehalten werden kann, und ein Verfahren zum genauen Polieren eines Siliziumwafers mit einem Ziel-Polierabschliff oder Ziel-Enddicke unter Verwendung des Poliermittels.

Подробнее
15-09-2016 дата публикации

CHEMISCH-MECHANISCHES POLIERKISSEN MIT FENSTER

Номер: DE102016002339A1
Принадлежит:

Es wird ein chemisch-mechanisches Polierkissen bereitgestellt, das eine Polierschicht, ein Endpunkterfassungsfenster, ein Unterkissen und ein Stapelhaftmittel aufweist, wobei das Unterkissen eine Mehrzahl von Öffnungen in einer optischen Verbindung mit dem Endpunkterfassungsfenster umfasst und wobei die Polierfläche der Polierschicht zum Polieren eines Substrats angepasst ist.

Подробнее
18-08-2005 дата публикации

Verfahren zur Herstellung der Halbleiterscheibe

Номер: DE102004004556A1
Принадлежит:

Gegenstand der Erfindung ist ein Verfahren zur Herstellung einer Halbleiterscheibe durch gleichzeitiges Polieren einer Vorderseite und einer Rückseite der Halbleiterscheibe zwischen sich drehenden Poliertellern unter Zuführen eines Poliersols während einer eine Polierzeit dauernden Polierfahrt, wobei die Halbleiterscheibe in einer Aussparung einer Läuferscheibe liegt und auf einer bestimmten geometrischen Bahn gehalten wird und die Läuferscheibe eine bestimmte Läuferscheibendicke besitzt und die Halbleiterscheibe vor dem Polieren eine Eingangsdicke und nach dem Polieren eine Enddicke aufweist. Die Polierzeit der Polierfahrt wird berechnet aus Daten, die die Eingangsdicke der Halbleiterscheibe und die Läuferscheibendicke sowie die Eingangs- und die Enddicke und die Ebenheit einer Halbleiterscheibe umfassen, die bei einer letzten, der Polierfahrt vorausgegangenen Polierfahrt poliert wurde.

Подробнее
24-12-2008 дата публикации

Verfahren zur Herstellung einer Halbleiterscheibe

Номер: DE102004004556B4
Принадлежит: SILTRONIC AG

Verfahren zur Herstellung einer Halbleiterscheibe durch gleichzeitiges Polieren der Vorderseite und der Rückseite der Halbleiterscheibe zwischen zwei sich drehenden Poliertellern unter Zuführung eines Poliersols während einer eine Polierzeit dauernden Polierfahrt, wobei die Halbleiterscheibe in einer Aussparung einer Läuferscheibe liegt und auf einer bestimmten geometrischen Bahn gehalten wird, und die Halbleiterscheibe und die Läuferscheibe bestimmte Dicken (F, G) aufweisen, dadurch gekennzeichnet, dass die Polierzeit einer aktuellen Polierfahrt aus Daten berechnet wird, die die Dicke (F) der Halbleiterscheibe am Anfang der aktuellen Polierfahrt, die Dicke (G) der Läuferscheibe am Anfang der aktuellen Polierfahrt, die Dicke (A) einer Halbleiterscheibe am Anfang einer vorhergehenden Polierfahrt, die Dicke (B) dieser Halbleiterscheibe am Ende der vorhergehenden Polierfahrt, die Dicke (D) der Läuferscheibe am Anfang der vorhergehenden Polierfahrt, die Polierzeit (C) der vorhergehenden Polierfahrt ...

Подробнее
15-09-2007 дата публикации

CMP METHOD OF A SUBSTRATE WITH A BUFFING WHEEL WITH FLIXIERTEM ABRASIVE

Номер: AT0000373317T
Автор: HUDSON GUY, HUDSON, GUY
Принадлежит:

Подробнее
08-10-2003 дата публикации

POLISHER

Номер: AU2003225708A1
Принадлежит:

Подробнее
17-04-2013 дата публикации

Large substrate, and polishing method of large substrate for uniform polishing

Номер: CN103052467A
Принадлежит:

According to the present invention, it is possible to minimize the difference of the polished amount of the center and the edge of a large substrate in a method for polishing a large substrate.

Подробнее
06-06-2012 дата публикации

Polishing device and abnormality treatment method thereof

Номер: CN0102485424A
Принадлежит:

Подробнее
12-02-2014 дата публикации

Pressure controller, polishing apparatus having the pressure controller, and polishing method

Номер: CN103567852A
Принадлежит:

Provided is a pressure controller, polishing apparatus having the pressure controller, and polishing method. The pressure controller includes: a pressure-regulating valve configured to regulate pressure of a fluid supplied from a fluid supply source; a first pressure sensor configured to measure the pressure regulated by the pressure-regulating valve; a second pressure sensor located downstream of the first pressure sensor; a PID controller configured to produce a correction pressure command value for eliminating a difference between a pressure command value and a pressure value of the fluid measured by the second pressure sensor; and a regulator controller configured to control operation of the pressure-regulating valve so as to eliminate a difference between the correction pressure command value and a pressure value of the fluid measured by the first pressure sensor. The pressure controller can eliminate a difference of a pressure measuring value caused by the temperature shift of a pressure ...

Подробнее
07-04-2020 дата публикации

Substrate processing apparatus and substrate processing method

Номер: CN0106041713B
Автор:
Принадлежит:

Подробнее
04-04-2012 дата публикации

Polishing apparatus

Номер: CN0102398210A
Принадлежит:

Подробнее
29-07-2019 дата публикации

Номер: KR0102004701B1
Автор:
Принадлежит:

Подробнее
11-04-1998 дата публикации

Wafer abrasion system

Номер: KR0000132274B1
Принадлежит:

An wafer abrasion system prevents the silicon dust from decreasing the remover tape adhesive force and from inhaling from edge to inside of wafer by adding another nozzle at the edge of the wafer when abrasing. The cutting water(2aa) flow is added due to the installment of another nozzle(2a) and the cutting water inflow from the nozzle changes silicon dust from (1ad) to (2ad), the curve expanding on the entire surface of wafer(3) of (1aa). As a result, this abrasion ends at the abrasion part(10) and silicon dust(2ar) decreases notably that is left on the wafer(3) before cleaning at the cleaning part(20) of the silicon dust. Copyright 1999 KIPO ...

Подробнее
05-04-2019 дата публикации

Номер: KR1020190037342A
Автор:
Принадлежит:

Подробнее
15-05-2019 дата публикации

Номер: KR1020190051825A
Автор:
Принадлежит:

Подробнее
22-07-2015 дата публикации

양면 연마 방법

Номер: KR1020150084764A
Принадлежит:

... 본 발명은, 고연마 레이트로 연마하는 제1 연마공정과, 이어서 저연마 레이트로 연마하는 제2 연마공정을 갖는 양면 연마 방법으로서, 연마 후에, 웨이퍼의 최외주부로부터 중심을 통과하는 직선을 소정의 구간으로 분할하고, 이 분할한 구간의 단면형상을 광학적으로 측정하는 공정과, 측정한 단면형상에 분할한 구간마다 미리 설정한 중량을 더하여 구간마다의 평탄도를 수치화하는 공정과, 수치화한 평탄도에 기초하여 차회 연마시의 제1 연마공정의 연마조건 및 제2 연마공정의 연마조건을 설정하는 공정을 포함하고, 단면형상을 측정하는 공정에 있어서, 최외주 구간의 측정에 이용하는 측정장치의 광속경을 최외주 구간 이외의 구간의 측정에 이용하는 광속경보다 작은 것을 이용하는 양면 연마 방법이다. 이에 따라, 생산성을 저감하는 일없이 연마 후의 웨이퍼의 최외주부까지의 형상을 정도 좋게 측정하고, 웨이퍼의 최외주부를 포함한 웨이퍼 전체의 평탄도를 향상시킬 수 있는 양면 연마 방법이 제공된다.

Подробнее
21-03-2016 дата публикации

PROCESSING MODULE, PROCESSING DEVICE AND PROCESSING METHOD

Номер: KR1020160030855A
Принадлежит:

A subject of the present invention is to improve polishing precision on a polished surface of a processing object. An upper processing module (300A) relatively moves a wafer (W) and a pad (502) while the pad (502) of a smaller diameter than the wafer (W) touches the wafer (W) so as to perform a polishing process. The upper processing module (300A) comprises: a state detecting unit (910) configured to detect a state of a polished surface of the wafer (W) before or during the processing process; and a control unit (920) configured to control a polishing condition in a part of the polished surface of the wafer (W) in accordance with the state of the polished surface detected by the state detecting unit (910). COPYRIGHT KIPO 2016 (910) State detecting unit (920) Control unit ...

Подробнее
21-11-2017 дата публикации

POLISHING CONTROL METHOD OF WAFER BY PHASE DIFFERENCE DETECTION USING MULTI-WAVELENGTH LIGHT, AND POLISHING SYSTEM USING SAME

Номер: KR1020170127377A
Автор: KIM, SEONG KYO
Принадлежит:

The present invention relates to a polishing control method of a wafer by a phase difference detection using multi-wavelength light, and a polishing system using the same. The polishing control method of the present invention comprises: a polishing step of polishing a polishing layer of a wafer; a light irradiating step of irradiating light onto first and second positions of the polishing layer of the wafer; a light receiving step of receiving a first reflected light at the first position and a second reflected light at the second position of the wafer; and a pressing force adjusting step of adjusting a pressing force of the wafer for each zone to solve deviation between a first optical interference signal from the first reflected light and a second optical interference signal from the second reflected light. According to the present invention, the deviation of the optical interference signal from a reflected light received from the polishing layer of the wafer is adjusted to be removed ...

Подробнее
02-04-2014 дата публикации

POLISHING METHOD AND POLISHING APPARATUS

Номер: KR1020140040033A
Автор:
Принадлежит:

Подробнее
03-08-2005 дата публикации

METHOD FOR FABRICATING SEMICONDUCTOR WAFER TO MINIMIZE DECREASE OF YIELD CAUSED BY VARIATION OF PROCESS

Номер: KR1020050077753A
Принадлежит:

PURPOSE: A method for fabricating a semiconductor wafer is provided to minimize a decrease of yield caused by a variation of a process by stabilizing polishing of both surfaces of a semiconductor wafer. CONSTITUTION: A semiconductor wafer is maintained in a geometrical path positioned in the cutout of a carrier during a polishing process performed for a predetermined interval of polishing time. The carrier has a predetermined thickness. The semiconductor wafer has an initial thickness before a polishing process and a final thickness after a polishing process. The interval of polishing time for the polishing process is calculated from data that includes the initial thickness of the semiconductor wafer, the thickness of the carrier and the initial thickness, final thickness and flatness of the semiconductor wafer polishing during a final polishing process before the present polishing process. © KIPO 2006 ...

Подробнее
01-02-2019 дата публикации

Chemical mechanical polishing system

Номер: TWI649154B

Подробнее
16-11-2011 дата публикации

GST film thickness monitoring

Номер: TW0201140673A
Принадлежит:

In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined.

Подробнее
16-12-2012 дата публикации

Varying coefficients and functions for polishing control

Номер: TW0201249598A
Принадлежит:

A method of generating a library of reference spectra includes storing an optical model for a layer stack having at a plurality of layers, receiving user input identifying a set of one or more refractive index functions and a set of one or more extinction coefficient functions a first layer from the plurality of layers, wherein the set of one or more refractive index functions includes a plurality of different refractive index functions or the set of one or more extinction coefficient functions includes a plurality of different extinction coefficient functions, and for each combination of a refractive index function from the set of refractive index functions and an extinction coefficient function from the set of extinction coefficient functions, calculating a reference spectrum using the optical model based on the refractive index function, the extinction coefficient function and a first thickness of the first layer. A method of generating a library of reference spectra, includes receiving ...

Подробнее
29-09-2020 дата публикации

WAFER PROCESSING METHOD

Номер: SG10202001105SA
Принадлежит:

Подробнее
11-02-2018 дата публикации

Номер: TWI614092B
Принадлежит: EBARA CORP, EBARA CORPORATION

Подробнее
15-01-2009 дата публикации

POLISHING APPARATUS

Номер: WO000002009008293A1
Принадлежит:

A polishing apparatus is provided with a stage (20) for holding a substrate (W); a stage rotating mechanism (40) for rotating the stage; a polishing head (42) for polishing the peripheral section of the substrate held by the stage; a control section (70) for controlling operation of the stage (20), the stage rotating mechanism (40) and the polishing head (42); an image acquiring section (61) for acquiring an image of the peripheral section of the substrate through at least one terminal imaging section (60) arranged to face the peripheral section of the substrate; an image processing section (62) for processing the image obtained from the image acquiring section; and a liquid jetting section (51) which jets a light transmissive liquid toward the peripheral section of the substrate and fills a space between the peripheral section of the substrate and the terminal imaging section with the liquid.

Подробнее
11-04-2013 дата публикации

PIVOT-BALANCED FLOATING PLATEN LAPPING MACHINE

Номер: WO2013052071A1
Автор: DUESCHER, Wayne, O.
Принадлежит:

A low friction flat-lapping abrading apparatus and method for releasably attaching flexible abrasive disks to a flat-surfaced platen that floats in three-point abrading contact with flat-surfaced workpieces that are attached to three rotary spindles. The rigid equal- height flat-surfaced rotatable fixed-position workpiece spindles are mounted on a flat abrading machine base. They are positioned to form a triangle to provide stable support of the floating platen. All three spindle-tops are co-planar aligned to provide a precision- flat reference plane for mounting of the workpieces. The lapping operation has very high abrading speeds and very low abrading forces. The lightweight but strong lapping machine employs a pivot-balance structure where the weight of the drive motor is used to balance the weight of the abrading platen. Use of low-friction air bearings provides the capability for precision control of the abrading forces. The lapping machine is robust and well suited for a harsh abrading ...

Подробнее
07-09-2001 дата публикации

A MODULAR CONTROL SYSTEM AND METHOD FOR A CMP TOOL

Номер: WO0001064395A3
Принадлежит:

A system and method for an automated chemical mechanical planarization (CMP) machine. The system comprises a plurality of interchangeable CMP process modules. Each module is a compilation of grouped software codes called "objects". Process modules may be added or deleted from the system as needed, whether during the machine's assembly or during actual use. The system is configured to allow users to input a process "recipe" for each wafer of a wafer cassette which will guide the system to process the wafer in a desired way.

Подробнее
19-10-1989 дата публикации

DEVICE FOR A TWIN-DISK LAPPING MACHINE

Номер: WO1989009679A1
Принадлежит:

A beam (11) is arranged generally vertically on the upper end of a radially-rotatable pillar support (3) in such a way that it can pivot around its generally central part. A tool spindle (15) is mounted axially, in a non-adjustable position, on the front end (13) of the beam in a spindle head (14) connected to the beam (11) and is driven by a first driving means (17). The upper tool disk (21) is mounted at the lower end of the tool spindle (15) on an articulated head (20). The pillar support (3), which is positioned and guided in the support guiding device (2), can be raised and lowered by means of a lifting spindle (4) driven by a second driving means (6) in order to bring the tool disk (21) into its working position. A first adjusting means (29) engaged on the rear end (28) of the beam is used to maintain the beam (11) in a generally horizontal position. A second adjusting means (30) which is also engaged on the rear end (28) of the beam is used to control the working pressure of the ...

Подробнее
20-06-2002 дата публикации

ARRANGEMENT AND METHOD FOR MOUNTING A BACKING FILM TO A POLISH HEAD

Номер: WO2002047870A1
Принадлежит:

Applying heat and pressure to a backing film (3) comprising an adhesive layer (4) during the procedure of mounting it to a polish head (1) for use in chemical mechanical polishing (CMP), inhomogeneities inside the adhesive layer (4), e.g. thickness and compressibility variations or air bubbles (101), can easily be removed. A corresponding arrangement comprises a means for exerting a uniform pressure force (51), which can be a roller (51a) made of silicone or rubber, or a plate (51b), a means for heating (61) asnd a control unit (5) for controlling the heat and the pressure force. The backing film (3) installed using this Arrangement and method provides a uniform removal of material from the semiconductor wafer (2) surface and therefore advantageously increases the wafer yield.

Подробнее
04-07-2000 дата публикации

Spindle assembly for force controlled polishing

Номер: US0006083082A1
Автор: Saldana; Miguel A.
Принадлежит: Lam Research Corporation

A spindle assembly for force controlled operation in applications such as the chemical mechanical planarization of semiconductor wafers includes an axially and rotatably movable spindle driven by a force producing device. The force producing device is controlled by a position feedback loop in a first mode of operation and a spindle force control feedback loop in a second mode of operation so that the same force producing device controls spindle movement in the first mode of operation and maintains a constant pressure on a workpiece based on the detected applied pressure in the second mode of operation.

Подробнее
07-09-1999 дата публикации

Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring

Номер: US0005948203A1
Автор: Wang; Shih-Ming

An apparatus for chemical-mechanical-polishing(CMP) is described which employs a dedicated optical film thickness monitor for quasi in-situ assessment of the thickness of a dielectric film on an integrated circuit wafer during CMP operations involving planarization and polish-back. The wafers being polished remain mounted on the CMP wafer carrier and are transported from the polishing platen to the optical film thickness measuring device by an integral mechanical transport assembly which can be operated either manually or automatically by a computer. Real-time polishing rates are determined after each polish/measurement cycle so that time variant polishing rates are redressed.

Подробнее
31-01-2002 дата публикации

Polishing apparatus

Номер: US20020013124A1
Принадлежит:

A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and allows a polishing pad to be automatically replaced without stopping rotary or circulatory motion of a polishing table. The polishing apparatus comprises a polishing table for making rotary or circulatory motion, a top ring vertically movably disposed above the polishing table for removably holding a workpiece to be polished, a pair of rolls rotatable about their own axes and movable in unison with the polishing table and a polishing pad which is wound on one of the rolls and supplied over an upper surface of the polishing table toward the other of the rolls.

Подробнее
20-02-1996 дата публикации

Chemical-mechanical polishing tool with end point measurement station

Номер: US0005492594A1
Принадлежит: International Business Machines Corp.

This is a wafer polishing and planarizing tool in which there is incorporated a separate measuring station and means for moving the wafer and immersing the wafer into the measuring station without removing it from the polishing head. The wafer being treated is quickly, reliably and periodically checked over its entire surface to determine the thickness of any dielectric on its surface. The measuring station contains a plurality of measuring electrodes immersed in an electrolyte so that when the wafer to be measured is introduced into the station not only is the wafer surface cleaned of any slurry or other contaminants but simultaneously the measuring electrodes see a constant medium to provide multi-point thickness measurements across the entire wafer surface. Thus measurement variations due to pad or slurry conditions are eliminated.

Подробнее
30-06-2020 дата публикации

Semiconductor manufacturing apparatus

Номер: US0010699968B2

A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

Подробнее
02-03-2006 дата публикации

Methods and systems for determining physical parameters of features on microfeature workpieces

Номер: US20060046618A1
Автор: Gurtej Sandhu, Cem Basceri
Принадлежит:

Methods and systems for determining physical parameters of features on microfeature workpieces. In one embodiment, a method includes directing a substantially coherent probe beam at a selected area of a feature on the microfeature workpiece to produce a reflected probe beam having phase information of different points within the selected area. The selected area can be only a portion of the workpiece. The method further includes determining a physical parameter of the feature at the different points within the selected area of the workpiece based on the reflected probe beam. The physical parameter can be a depth, height, thickness, width, or other dimension of a layer, trench, hole, projection, or other feature on the workpiece.

Подробнее
19-09-2019 дата публикации

Consumable Part Monitoring in Chemical Mechanical Polisher

Номер: US20190283209A1
Принадлежит:

A polishing apparatus includes a polishing station to hold a polishing pad, a carrier head to hold a substrate in contact with a polishing pad at the polishing station, a camera positioned to capture an image of a lower surface of a consumable part when the consumable part moves away from the polishing pad, and a controller configured to perform an image processing algorithm on the image to determine whether the consumable part is damaged. The consumable part can be a retaining ring on a carrier head, or a conditioner disk on a conditioner head.

Подробнее
07-07-2016 дата публикации

METHOD AND DEVICE FOR POLISHING SEMICONDUCTOR WAFER

Номер: US20160196966A1
Принадлежит: SUMCO TECHXIV CORPORATION

A method includes: polishing a semiconductor wafer by a polishing device; measuring a form of the semiconductor wafer by a measuring device before a polished surface of the semiconductor wafer becomes hydrophilic; and setting polishing conditions for the polishing based on a measurement result of the form of the semiconductor wafer by a polishing condition setting unit.

Подробнее
30-01-2014 дата публикации

METHOD FOR ADJUSTING HEIGHT POSITION OF POLISHING HEAD AND METHOD FOR POLISHING WORKPIECE

Номер: US20140030957A1
Принадлежит: SHIN-ETSU HANDOTAI CO., LTD.

A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position. 14-. (canceled)5. A method for adjusting a height position of a polishing head in a polishing apparatus , the polishing apparatus including:a polishing pad attached onto a turn table; a polishing-agent-supplying mechanism configured to supply a polishing agent to the polishing pad; a polishing head for holding a back surface of a workpiece while holding a side surface of the workpiece by an annular guide ring; a torque-measuring mechanism configured to measure load torque current of at least one of the polishing head and the turn table; and a height-adjusting mechanism configured to move the polishing head in a height direction to adjust a distance between the guide ring and the polishing pad,the polishing apparatus being configured to move the polishing head to a predetermined position with the height-adjusting mechanism, and to polish the workpiece held by the polishing head by pressing the workpiece against the polishing pad, the method comprising the steps of:moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing ...

Подробнее
19-07-2016 дата публикации

Measuring method of surface roughness of polishing pad

Номер: US0009393670B2
Принадлежит: EBARA CORPORATION, EBARA CORP

There is disclosed a measuring method of a surface roughness of a polishing pad which can measure a surface roughness index of the polishing pad showing a strong relationship with polishing performance. A method for measuring a surface roughness of a polishing pad includes acquiring an image of a surface of a polishing pad by using a laser microscope, selecting only a region which has a height larger than an average height from the acquired image, and calculating a surface roughness from only the selected region.

Подробнее
23-05-2023 дата публикации

Method of detecting abnormality of a roller which transmits a local load to a retainer ring, and polishing apparatus

Номер: US0011654524B2
Принадлежит: EBARA CORPORATION

A method of detecting abnormality of a roller which transmits a local load to a retainer ring is disclosed. The method comprises: rotating a polishing head which includes a head body and a retainer ring, the head body having a pressing surface for pressing a substrate, the retainer ring being arranged so as to surround the pressing surface; measuring a torque for rotating the polishing head, while rotating a rotary ring together with the polishing head and while exerting a local load to a stationary ring located on the rotary ring, the rotary ring being fixed to the retainer ring and having a plurality of rollers; generating a torque waveform indicating relationship between measured values of the torque for rotating the polishing head and measuring times of the torque; performing Fourier-transform process on the torque waveform to determine an intensity of frequency component of the torque waveform; and determining that at least one of the rollers malfunctions when the determined intensity ...

Подробнее
09-04-2024 дата публикации

Zone-based CMP target control

Номер: US0011951587B2

The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.

Подробнее
15-11-2000 дата публикации

Chemical mechanical polishing with friction-based control

Номер: EP0001052064A3
Принадлежит:

A chemical mechanical polishing apparatus (20)has a polishing surface, a carrier head (34) to press a substrate (10)against the polishing surface (24) with a controllable pressure, a motor (26) to generate relative motion between the polishing surface (24) and the carrier head (34) at a velocity, and a controller (42). The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.

Подробнее
25-09-2002 дата публикации

Polishing apparatus having interlock function

Номер: EP0000810064B1
Автор: Watanabe, Katsuhide
Принадлежит: EBARA CORPORATION

Подробнее
03-06-2015 дата публикации

改善されたロードカップ基板検知

Номер: JP0005730212B2
Принадлежит:

Подробнее
26-01-2012 дата публикации

Real-time monitoring of retaining ring thickness and lifetime

Номер: US20120021671A1
Принадлежит: Applied Materials Inc

A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy.

Подробнее
15-03-2012 дата публикации

Method of polishing object to be polished and polishing pad

Номер: US20120064803A1
Принадлежит: NGK Insulators Ltd

The present invention provides: a method of polishing an object to be polished for processing a surface of the object to be polished into a concave or convex state with a high degree of accuracy; and a polishing pad. An object to be polished 20 is placed on a polishing pad 10 over the boundary between the first polishing region 11 and the second polishing region 12 , the first polishing region 11 has grooves and the second polishing region 12 has grooves different from those of the first polishing region 11 , and either one of the two regions being formed on a region on the center side, and the other on the outer side in a radial direction on the surface of the polishing pad; and the object to be polished 20 is polished by rotating the polishing pad 10 and the object to be polished 20.

Подробнее
27-09-2012 дата публикации

Polishing method, polishing apparatus and polishing tool

Номер: US20120244649A1
Принадлежит: Ebara Corp, Osaka University NUC

A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water ( 232 ) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate ( 142 ) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad ( 242 ) having an electrically conductive member ( 264 ) in an area of the surface which is held in contact with the substrate ( 142 ) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate ( 142 ).

Подробнее
08-08-2013 дата публикации

RETAINING RING MONITORING AND CONTROL OF PRESSURE

Номер: US20130203321A1
Принадлежит:

A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator. 1. A load cup apparatus for transferring a substrate in a processing system , comprising:a pedestal assembly having a substrate support;an actuator configured to move the pedestal assembly into a loading or unloading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly; anda controller configured to receive the retaining ring thickness signal from the actuator.2. The apparatus of claim 1 , wherein the pedestal assembly comprises a body having a top surface and an inwardly projecting ledge to support the substrate claim 1 , the ledge having an upper surface below the top surface.3. The apparatus of claim 2 , wherein the pedestal assembly comprises a lip projecting above the top surface claim 2 , the lip having a sloped inner wall.4. The apparatus of claim 3 , wherein the pedestal assembly is configured such that in the loading or unloading position the top surface of the body contacts a bottom surface of the retaining ring.5. The apparatus of claim 3 , wherein the lip has a horizontal surface radially outward of the sloped inner wall.6. The apparatus of claim 1 , wherein the controller is configured to compare the retaining ring thickness signal to a threshold value and to determine whether to generate an alarm based on the comparison.7. The apparatus of claim 1 , wherein the controller is configured to adjust a pressure of at least one chamber in the carrier head based on ...

Подробнее
08-08-2013 дата публикации

Adjusting Polishing Rates by Using Spectrographic Monitoring of a Substrate During Processing

Номер: US20130204424A1
Принадлежит: Individual

A computer-implemented method includes receiving a sequence of current spectra of reflected light from a substrate; comparing each current spectrum from the sequence of current spectra to a plurality of reference spectra from a reference spectra library to generate a sequence of best-match reference spectra; determining a goodness of fit for the sequence of best-match reference spectra; and determining at least one of whether to adjust a polishing rate or an adjustment for the polishing rate, based on the goodness of fit.

Подробнее
12-09-2013 дата публикации

Detecting Membrane Breakage in a Carrier Head

Номер: US20130237129A1
Автор: Schauer Ronald Vern
Принадлежит:

A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line. 1. A chemical mechanical polishing system , comprising:a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane;a pressure control unit;a pressure supply line connecting the pressure control unit to the chamber; anda sensor located along the pressure supply line to detect a contaminant in the pressure supply line.2. The polishing system of claim 1 , wherein the sensor comprises an optical sensor.3. The polishing system of claim 2 , wherein the pressure supply line comprises a transparent portion claim 2 , and wherein the optical sensor comprises a detector and a light source configured to direct light through the transparent portion to the detector.4. The polishing system of claim 3 , further comprising a drive shaft connected to the carrier head.5. The polishing system of claim 4 , wherein the pressure supply line comprises a passage in the drive shaft and the transparent portion comprises a portion of the drive shaft.6. The polishing system of claim 3 , wherein the pressure supply line comprises tubing fluidically coupling the drive shaft to the pressure control unit claim 3 , and the transparent portion comprises a portion of the tubing.7. The polishing system of claim 3 , wherein the carrier head has a plurality of chambers including the chamber claim 3 , and the polishing system includes a plurality of pressure supply lines including the supply line claim 3 , the plurality of chambers connected to the plurality of pressure supply lines.8. The polishing system of claim 7 , further comprising a sensor for each supply line of the plurality of pressure supply lines.9. The ...

Подробнее
03-10-2013 дата публикации

LOAD CUP SUBSTRATE SENSING

Номер: US20130260646A1
Принадлежит: Applied Materials, Inc.

Embodiments of the present invention generally provide a load cup used in the transfer of substrates in a chemical mechanical polishing system. The load cup includes an improved substrate edge sensing mechanism to ensure a substrate is present and correctly positioned in the load cup for transfer to a polishing head. In one embodiment, a lever actuated edge sensing mechanism is provided. In one embodiment, the edge of a substrate contacts a lever, which contacts a sensor to detect that the substrate is present and correctly positioned for exchange with a polishing head. Embodiments of the present invention provide reliable detection, while reducing contact with the feature side of the substrate during substrate transfer. 1. A load cup assembly , comprising:a cup member having a pedestal member disposed therein;a plurality of substrate positioning members extending from the pedestal member; anda plurality of lever actuated substrate sensors disposed on the pedestal member and configured to send signals to a controller.2. The load cup assembly of claim 1 , wherein each lever actuated substrate sensor comprises a lever arm attached to a counterweight claim 1 , wherein the lever arm is disposed over a sensor member.3. The load cup assembly of claim 2 , wherein the sensor members are disposed inboard of the plurality of substrate positioning members claim 2 , and wherein the counterweights are disposed inboard of the sensor members.4. The load cup assembly of claim 3 , wherein a pivot member is disposed through the outboard side of each counterweight.5. The load cup assembly of claim 2 , wherein each lever actuated substrate sensor further comprises an angled contact feature attached to the lever arm opposite the counterweight.6. The load cup assembly of claim 5 , wherein the sensor members are disposed outboard of the plurality of substrate positioning members claim 5 , and wherein the counterweights are disposed outboard of the sensor members.7. The load cup assembly ...

Подробнее
05-12-2013 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20130324012A1
Принадлежит:

A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface, a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder. 1. A polishing apparatus for polishing a substrate by bringing the substrate into contact with a polishing surface , comprising:a substrate holder having a substrate holding surface configured to press the substrate against the polishing surface,a retaining ring coupled to the substrate holding surface and configured to surround the substrate, wherein the retaining ring is brought into contact with the polishing surface during operation of the polishing apparatus, the retaining ring being configured to be tillable independently of the substrate holding surface;a rotating mechanism configured to rotate the substrate holder about its own axis; andat least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface, the at least one local load exerting mechanism being arranged so as not to move in accordance with the substrate holder.2. The polishing apparatus according to claim 1 , further comprising a retaining ring pressing ...

Подробнее
19-12-2013 дата публикации

Method and apparatus for polishing workpiece

Номер: US20130337723A1
Принадлежит: Sumco Corp

In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate.

Подробнее
02-01-2014 дата публикации

POLISHING PAD AND CHEMICAL MECHANICAL POLISHING APPARATUS FOR POLISHING A WORKPIECE, AND METHOD OF POLISHING A WORKPIECE USING THE CHEMICAL MECHANICAL POLISHING APPARATUS

Номер: US20140004772A1
Принадлежит: EBARA CORPORATION

A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer. 1. A polishing pad for polishing a workpiece , the polishing pad comprising:an elastic pad having a polishing surface;a deformable base layer that supports the elastic pad; andan adhesive layer that joins the elastic pad to the base layer.2. The polishing pad according to claim 1 , wherein the base layer is thicker than the elastic pad.3. The polishing pad according to claim 1 , wherein the base layer has a thickness at least three times that of the elastic pad.4. The polishing pad according to claim 1 , wherein the base layer is softer than the elastic pad.5. The polishing pad according to claim 1 , wherein the adhesive layer has a higher elasticity than that of the elastic pad.6. The polishing pad according to claim 1 , wherein the adhesive layer is made of adhesive material capable of staying in a soft state.7. The polishing pad according to claim 1 , wherein the elastic pad is made of foamed polyester.8. The polishing pad according to claim 1 , wherein the base layer is made of polyurethane sponge.9. The polishing pad according to claim 1 , wherein the adhesive layer is made of acrylic adhesive material.10. A chemical mechanical polishing apparatus for polishing a workpiece claim 1 , the apparatus comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a polishing pad according to ;'}a rotatable polishing table supporting the polishing pad;a carrier configured to hold the workpiece and press the workpiece against the polishing pad;a rotating device configured to rotate the carrier about its own axis; anda polishing liquid ...

Подробнее
30-01-2014 дата публикации

Monitoring Retaining Ring Thickness And Pressure Control

Номер: US20140027407A1
Принадлежит:

A chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring. 1. A chemical mechanical polishing apparatus , comprising:a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad;an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion; anda controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring.2. The apparatus of claim 1 , wherein the carrier head comprises a plurality of chambers claim 1 , and the at least one polishing parameter comprises a pressure in at least one of the plurality of chambers.3. The apparatus of claim 2 , wherein the at least one of the plurality of chambers comprises a chamber that controls a pressure on an edge of a substrate held in the carrier head.4. The apparatus of claim 3 , wherein the controller is configured to decrease the pressure in the at least one of the plurality of chambers if the signal increases.5. The apparatus of claim 1 , wherein the retaining ring includes a metal portion secured to a top surface of the plastic portion.6. The apparatus of claim 5 , wherein the in-situ monitoring system comprises an eddy current monitoring system.7. The apparatus of claim 6 , further comprising a rotatable platen to ...

Подробнее
30-01-2014 дата публикации

Grinder/polisher

Номер: US20140030967A1
Автор: Michael F. Hart
Принадлежит: ILLINOIS TOOL WORKS INC

An improved grinder/polisher includes a base having a bowl, a rotating drive plate and a drive plate drive that is adapted to support a platen. The grinder/polisher includes a head configured to support a specimen holder. The head has a first drive for rotational drive of the specimen holder and a second drive for moving the specimen holder toward and away from the drive plate. The head includes a load cell operably connected to the first drive and a counter operably connected to the second drive. The counter is configured to determine movement and the extent of movement of the head toward and away from the drive plate. The grinder/polisher includes a control panel mounted within a housing and including a microprocessor controlled control system having a touch panel or screen.

Подробнее
27-03-2014 дата публикации

METHOD OF DETECTING ABNORMALITY IN POLISHING OF A SUBSTRATE AND POLISHING APPARATUS

Номер: US20140087627A1
Принадлежит:

A method of detecting an abnormality in polishing of a substrate is provided. The method includes: rotating the substrate; pressing a polishing tool against an edge portion of the substrate to polish the edge portion; measuring a position of the polishing tool relative to a surface of the substrate; determining an amount of polishing of the substrate from the position of the polishing tool; calculating a polishing rate from the amount of polishing of the substrate; and judging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range. 1. A method of detecting an abnormality in polishing of a substrate , said method comprising:rotating the substrate;pressing a polishing tool against an edge portion of the substrate to polish the edge portion;measuring a position of the polishing tool relative to a surface of the substrate;determining an amount of polishing of the substrate from the position of the polishing tool;calculating a polishing rate from the amount of polishing of the substrate; andjudging that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.2. The method according to claim 1 , wherein said judging comprises judging that an abnormality in polishing of the edge portion of the substrate has occurred if the number of times the polishing rate goes beyond a predetermined range reaches a predetermined number.3. The method according to claim 1 , wherein said judging comprises judging that an abnormality in polishing of the edge portion of the substrate has occurred if a period of time the polishing rate is out of a predetermined range exceeds a predetermined threshold value.4. The method according to claim 1 , further comprising:terminating polishing of the edge portion of the substrate if the abnormality in polishing of the edge portion of the substrate is judged to have occurred.5. The method according ...

Подробнее
27-03-2014 дата публикации

PRESSURE REGULATOR, POLISHING APPARATUS HAVING THE PRESSURE REGULATOR, AND POLISHING METHOD

Номер: US20140087629A1
Принадлежит: EBARA CORPORATION

A pressure regulator includes: a pressure-regulating valve configured to regulate pressure of a fluid supplied from a fluid supply source; a first pressure sensor configured to measure the pressure regulated by the pressure-regulating valve; a second pressure sensor located downstream of the first pressure sensor; a PID controller configured to produce a correction pressure command value for eliminating a difference between a pressure command value and a pressure value of the fluid measured by the second pressure sensor; and a regulator controller configured to control operation of the pressure-regulating valve so as to eliminate a difference between the correction pressure command value and a pressure value of the fluid measured by the first pressure sensor. 1. A pressure regulator , comprising:a pressure-regulating valve configured to regulate pressure of a fluid supplied from a fluid supply source;a first pressure sensor configured to measure the pressure regulated by the pressure-regulating valve;a second pressure sensor located downstream of the first pressure sensor;a PID controller configured to produce a correction pressure command value for eliminating a difference between a pressure command value and a pressure value of the fluid measured by the second pressure sensor; anda regulator controller configured to control operation of the pressure-regulating valve so as to eliminate a difference between the correction pressure command value and a pressure value of the fluid measured by the first pressure sensor.2. The pressure regulator according to claim 1 , wherein the first pressure sensor and the pressure-regulating valve are assembled integrally and the second pressure sensor is separated from the first pressure sensor and the pressure-regulating valve.3. The pressure regulator according to claim 1 , wherein the second claim 1 , pressure sensor is located in an atmosphere with a constant temperature.4. The pressure regulator according to claim 3 , wherein ...

Подробнее
07-01-2021 дата публикации

EDDY CURRENT SENSOR

Номер: US20210001447A1
Принадлежит:

The eddy current sensor for measuring the film thickness of a conductive film formed on a substrate includes a core made of a magnetic material that has a base portion, and outer legs provided to the base portion at both end portions in a first direction of the base portion respectively, an excitation coil that is arranged on the core and forms an eddy current in the conductive film, and a detection coil that is arranged on the core and detects the eddy current formed in the conductive film. The length of the base portion in the first direction is not less than the length of the base portion in a second direction that is substantially orthogonal to the first direction. 1. An eddy current sensor for measuring a film thickness of a conductive film formed on a substrate , comprising:a core made of a magnetic material including a base portion, and outer legs that are provided to the base portion at both end portions in a first direction of the base portion, respectively;an excitation coil that is arranged on the core and forms an eddy current in the conductive film; anda detection coil that is arranged on the core and detects the eddy current formed in the conductive film, wherein a length of the base portion in the first direction is not less than a length of the base portion in a second direction that is substantially orthogonal to the first direction.2. The eddy current sensor according to claim 1 , wherein the core is an E-shaped core having a middle leg that is provided to the base portion at a center in the first direction of the base portion claim 1 , the excitation coil is arranged on the middle leg claim 1 , and the detection coil is arranged on the middle leg.3. The eddy current sensor according to claim 2 , wherein the core has side legs that are provided to the base portion at both end portions in the second direction of the base portion respectively claim 2 , the side legs are connected to the outer legs claim 2 , and the middle leg is surrounded by the ...

Подробнее
04-01-2018 дата публикации

FILM THICKNESS SIGNAL PROCESSING APPARATUS, POLISHING APPARATUS, FILM THICKNESS SIGNAL PROCESSING METHOD, AND POLISHING METHOD

Номер: US20180001437A1
Автор: NAKAMURA Akira
Принадлежит:

A receiving unit receives sensor data output from an eddy current sensor for detecting the film thickness of a polishing object to generate film thickness data. A correcting unit corrects the film thickness data in an inside of the edge of the polishing object based on the film thickness data generated by the receiving unit. The correcting unit corrects the film thickness data generated by the receiving unit in the inside of the edge of the polishing object using the film thickness data generated by the receiving unit in an outside of the edge of the polishing object. 1. A film thickness signal processing apparatus comprising:a receiving unit for receiving sensor data output from a film thickness sensor for detecting a film thickness of a polishing object to generate film thickness data; anda correcting unit for correcting the film thickness data in an inside of an edge of the polishing object based on the film thickness data generated by the receiving unit,wherein the correcting unit corrects the film thickness data generated by the receiving unit in the inside of the edge of the polishing object using the film thickness data generated by the receiving unit in an outside of the edge of the polishing object.2. The film thickness signal processing apparatus according to claim 1 , comprising:an estimating unit for estimating a position of the edge of the polishing object based on film thickness data generated by the receiving unit,wherein the correcting unit corrects the film thickness data using the estimated position of the edge.3. The film thickness signal processing apparatus according to claim 1 , whereinthe correcting unit performs the correction by adding the film thickness data generated by the receiving unit at a position that is located at a first distance outward from the edge to the film thickness data generated by the receiving unit at a position that is at a second distance inward from the edge, the first distance and the second distance being equal to ...

Подробнее
04-01-2018 дата публикации

HEAD HEIGHT ADJUSTMENT DEVICE AND SUBSTRATE PROCESSING APPARATUS PROVIDED WITH HEAD HEIGHT ADJUSTMENT DEVICE

Номер: US20180001438A1
Принадлежит:

According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface. 1. A substrate processing apparatus comprising:a table provided with a substrate holding surface for holding a substrate;a pad for processing the substrate held on the table;a head for holding the pad;an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table; anda mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface, a first member that can move in a first direction which is a direction parallel to the substrate holding surface and has a first inclined surface that forms a predetermined angle with respect to the first direction; and', 'a second member that has a second inclined surface that slidably contacts the first inclined surface of the first member, and', 'the second member is provided with a stopping surface for defining a stop position of the head when the actuator or a lifting member for lifting/lowering the actuator, the lifting member being connected to the actuator, comes into contact the stopping surface, and, 'wherein the mechanical stopper device comprisesthe stopping surface of the second member is displaceable in a second direction perpendicular to the substrate holding surface when the first member moves in the first direction.2. The substrate processing apparatus according to claim 1 , wherein the mechanical stopper device comprises a ball screw for moving the first member in the first direction claim 1 , anda screw shaft of ...

Подробнее
04-01-2018 дата публикации

BARRIER DEVICE USED IN THE MANUFACTURE OF A LAPPING PLATE, AND RELATED APPARATUSES AND METHODS OF MAKING

Номер: US20180001439A1
Принадлежит:

The present disclosure includes barrier devices for use in an apparatus used to form lapping plates. The barrier devices can contain liquid on the surface of the lapping plate platen. The present disclosure also involves related methods. 1) An apparatus for processing a major surface of a lapping plate platen , wherein the apparatus comprises:a) a rotatable platter configured to secure and physically support the lapping plate platen during processing of the major surface of the lapping plate platen;b) one or more liquid dispensers configured to dispense one or more liquid treatment compositions onto the major surface of the lapping plate platen;c) a movable barrier mechanism, wherein the movable barrier mechanism comprises one or more ring segments that can be securely adjusted from an open position to allow one or more liquid treatment compositions to pass through between the barrier mechanism and the outside top perimeter of the lapping plate platen to a closed position so that the one or more elastic ring segments form a barrier that extends above the major surface of the lapping plate platen to substantially contain one or more liquid treatment compositions on the major surface of the lapping plate platen during one or more processing steps of the major surface of the lapping plate platen.2) The apparatus of claim 1 , wherein the one or more ring segments comprise one or more elastic ring segments.3) The apparatus of claim 2 , wherein the one or more ring segments comprise one continuous ring.4) The apparatus of claim 3 , wherein the elastic ring has a height of at least 1 inch and extends above the major surface of the lapping plate platen at least 0.25 inches.5) The apparatus of claim 3 , wherein the elastic ring comprises rubber.6) The apparatus of claim 5 , wherein the elastic ring has a diameter of 10 inches or more.7) The apparatus of claim 1 , wherein the movable barrier mechanism further comprises three or more rigid segments that that support and move ...

Подробнее
02-01-2020 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20200001428A1
Принадлежит:

A polishing apparatus includes a first electric motor that rotationally drives a polishing table and a second electric motor that rotationally drives a top ring that holds a semiconductor wafer The polishing apparatus includes: a current detection portion an accumulation portion that accumulates, for a prescribed interval, current values of three phases that are detected by the current detection portion a difference portion that determines a difference between a detected current value in an interval that is different to the prescribed interval and the accumulated current value; and an endpoint detection portion that detects a polishing endpoint that indicates the end of polishing of the surface of the semiconductor wafer based on a change in the difference that the difference portion outputs. 1. A polishing apparatus for performing polishing between a polishing pad and a polishing object that is disposed facing the polishing pad , comprising:a first electric motor that rotationally drives a polishing table for holding a polishing pad, anda second electric motor that rotationally drives a holding portion for holding the polishing object and pressing the polishing object against the polishing pad,the polishing apparatus further comprising:a current detection portion that detects a current value of at least one of the first and second electric motors;an accumulation portion that accumulates the detected current value for a prescribed interval;a difference portion that determines a difference between the detected current value in an interval that is different to the prescribed interval and the accumulated current value; andan endpoint detection portion that detects a polishing endpoint that indicates an end of the polishing based on a change in the difference that the difference portion outputs.2. The polishing apparatus according to claim 1 , further comprising a position detection portion that detects a rotational position of at least one of the polishing table and ...

Подробнее
14-01-2021 дата публикации

SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM

Номер: US20210008684A1
Принадлежит:

A substrate processing system capable of reliably releasing a wafer without damaging the wafer is disclosed. The substrate processing system includes a top ring , a vacuum forming mechanism , and a controller . A program causes a processer to measure a height of the top ring , to compare the height of the top ring with a suction start position, and to form a vacuum inside an elastic bag based on a result of comparison between the height of the top ring and the suction start position. 1. A substrate processing system comprising:a top ring comprising a vertically movable retainer ring and an elastic bag configured to vertically move the retainer ring;a vacuum forming mechanism coupled to the elastic bag; anda controller connected to the vacuum forming mechanism,wherein the controller comprises a memory storing a program and a processer executing operations according to the program, andwherein the program causes the processer to measure a height of the top ring lowering to a top-ring lowered position, the processer to compare the height of the top ring with a suction start position, and the vacuum forming mechanism to form a vacuum inside the elastic bag based on a result of comparing the height of the top ring with the suction start position.2. The substrate processing system according to claim 1 , wherein the program causes the vacuum forming mechanism to form the vacuum inside the elastic bag on a condition that the height of the top ring is lower than the suction start position.3. The substrate processing system according to claim 1 , wherein the program causes the processer to measure a temporal change in the height of the retainer ring until the top ring reaches the top-ring lowered position claim 1 , the processer to compare whether or not an amount of overshoot of the temporal change is within a predetermined allowable range claim 1 , and the processer to change the suction start position to a position higher than the top-ring lowered position on a condition ...

Подробнее
14-01-2021 дата публикации

ROTARY BODY MODULE AND CHEMICAL MECHANICAL POLISHING APPARATUS HAVING THE SAME

Номер: US20210008686A1
Принадлежит:

A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted. 1. A chemical mechanical polishing apparatus comprising:a fixing portion; anda rotary body module including a rotating shaft rotatably provided on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted,wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit,wherein the first and second driving members are comprised of a magnet or an electromagnet,wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, andwherein the first rotating unit and the second rotating unit are independently tilted.2. The chemical mechanical polishing apparatus according to claim 1 , wherein the fixing portion comprises a first displacement sensor ...

Подробнее
10-01-2019 дата публикации

SUBSTRATE POLISHING APPARATUS AND METHOD

Номер: US20190009385A1
Автор: HIROO Yasumasa, YAGI Keita
Принадлежит:

A polishing apparatus comprises a dresser that can adjust swing speed in the scanning areas set on a polishing member along a swing direction, a height detection section that measures a surface height of the polishing member in a plurality of monitoring areas set on the polishing member along the swing direction of the dresser, a dress model matrix creation section that creates a dress model matrix defined from a plurality of monitoring areas, scanning areas and a dress model, an evaluation index creation section that calculates a height profile predicted value using the dress model, the swing speed in each scanning area or a staying time and sets evaluation index based on a difference from a target value of height profile of the polishing member and a moving speed calculation section that calculates the swing speed in each scanning area of the dresser based on the evaluation index. 1. A polishing apparatus that polishes a substrate placed on and in slidable contact with a polishing member , said polishing apparatus comprising:a dresser that dresses the polishing member by swinging on the polishing member, a swing speed of which is adjustable in a plurality of scanning areas set on the polishing member along a swing direction;a height detection section that measures a surface height of the polishing member in a plurality of monitoring areas set in advance on the polishing member along the swing direction of the dresser;a dress model matrix creation section that creates a dress model matrix defined from a plurality of monitoring areas, scanning areas and a dress model;an evaluation index creation section that calculates a height profile predicted value using the dress model, the swing speed in each scanning area or a staying time and sets an evaluation index based on a difference from a target value of a height profile of the polishing member; anda moving speed calculation section that calculates the swing speed in each scanning area of the dresser based on the ...

Подробнее
09-01-2020 дата публикации

SUBSTRATE PROCESSING APPARATUS

Номер: US20200009703A1
Принадлежит: KCTECH CO., LTD.

The present invention relates to a substrate polishing system comprising a polishing pad covered on the polishing platen; a plurality of substrate carriers including a first substrate carrier which moves in a state in which a substrate is mounted and performs a polishing process in a state in which the substrate is in contact with the polishing pad on the polishing pad; a monitoring unit of displaying the information including the identity, position of at least one of the substrate carriers; and a control unit of outputting a warning signal and/or changes the operation of operating devices when an error occurs in real time thereby improving the monitoring efficiency and operation reliability of the polishing process of the substrate. 1. A substrate polishing system for performing a polishing process for a plurality of substrates including the first substrate and the second substrate , comprising:a polishing pad covered on the polishing platen;a plurality of substrate carriers including a first substrate carrier which moves in a state in which a substrate is mounted and performs a polishing process in a state in which the substrate is in contact with the polishing pad on the polishing pad; anda monitoring unit of displaying the information including the identity, position of at least one of the substrate carriers2. The substrate polishing system of claim 1 , wherein the plurality of substrate carriers moves independently along a predetermined movement path respectively.3. The substrate polishing system of claim 1 , wherein the substrate carriers are provided with an identifier and the monitoring unit identifies the substrate carrier through the identifier.4. The substrate polishing system of claim 3 , wherein the monitoring units are arranged in plural along the movement path of the substrate carriers to sense the position of the substrate carrier.5. The substrate polishing system of claim 4 , wherein the monitoring unit senses the identifier at a first position ...

Подробнее
14-01-2016 дата публикации

In-Situ Acoustic Monitoring of Chemical Mechanical Polishing

Номер: US20160013085A1
Принадлежит:

A method of controlling chemical mechanical polishing includes polishing a substrate having a plurality of protrusions, monitoring the substrate during polishing with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor, and detecting breakage of the protrusions based on the signal. 1. A method of controlling chemical mechanical polishing , comprising:polishing a substrate having a plurality of protrusions;during polishing, monitoring the substrate with an in-situ monitoring system to generate a signal, the in-situ monitoring system including an acoustic sensor, a motor current sensor or a motor torque sensor;detecting breakage of the protrusions based on the signal.2. The method of claim 1 , wherein detecting breakage comprises comparing a signal intensity to a threshold value.3. The method of claim 2 , comprising calculating the signal intensity from a root mean square of the signal4. The method of claim 2 , comprising performing a Fast Fourier Transform on the signal to generate a transformed signal claim 2 , and calculating the signal intensity based on an intensity of a frequency band of the transformed signal.5. The method of claim 2 , comprising performing a wavelet packet transform on the signal to generate a plurality of signal components claim 2 , and calculating the signal intensity based on an intensity of a signal component.6. The method of claim 1 , comprising halting polishing upon detecting breakage of the protrusions.7. The method of claim 1 , wherein detecting breakage of the protrusions triggers reducing a pressure and/or a relative speed of polishing for a subsequent substrate.8. The method of claim 1 , wherein the protrusions comprise stubs of through silicon vias in the substrate.9. A chemical mechanical polishing apparatus claim 1 , comprising:a platen to support a polishing pad;a carrier head to hold a substrate in contact with the ...

Подробнее
18-01-2018 дата публикации

CMP APPARATUS HAVING POLISHING PAD SURFACE PROPERTY MEASURING DEVICE

Номер: US20180015590A1
Автор: MATSUO Hisanori
Принадлежит:

The present invention relates to a CMP apparatus having a polishing pad surface property measuring device for measuring surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The CMP apparatus includes a polishing pad surface property measuring device () configured to apply a laser beam to a surface of a polishing pad () and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle, a processor () configured to perform a Fourier transform on a reflection intensity distribution obtained by the measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad and to obtain surface properties of the polishing pad by numerical analysis, a dressing control unit () configured to determine dressing conditions of the polishing pad () by a closed loop control based on the surface properties of the polishing pad obtained by the processor, and a dressing apparatus () configured to dress the polishing pad based on the dressing conditions determined by the dressing control unit. 1. A CMP apparatus comprising:a polishing pad surface property measuring device configured to apply a laser beam to a surface of a polishing pad and to receive reflected light from the polishing pad to obtain reflection intensity in each reflection angle;a processor configured to perform a Fourier transform on a reflection intensity distribution obtained by the polishing pad surface property measuring device to obtain a spatial wavelength spectrum of the surface of the polishing pad, and to perform numerical analysis on the spatial wavelength spectrum to obtain surface properties of the polishing pad;a dressing control unit configured to determine dressing conditions of the polishing pad by a closed loop control based on the surface properties of the polishing pad obtained by the processor; anda dressing apparatus configured to dress the ...

Подробнее
15-01-2015 дата публикации

POLISHING METHOD AND POLISHING APPARATUS

Номер: US20150017745A1
Принадлежит:

A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion. 1. A polishing method , comprising:inspecting a periphery of a substrate for an abnormal portion;polishing the substrate if the abnormal portion is not detected; andnot polishing the substrate if the abnormal portion is detected.2. The polishing method according to claim 1 , further comprising:after polishing of the substrate, inspecting the periphery of the substrate again for an abnormal portion.3. The polishing method according to claim 2 , further comprising:not starting polishing of a subsequent substrate if the abnormal portion is detected in the periphery of the polished substrate.4. The polishing method according to claim 2 , further comprising:changing polishing conditions for a subsequent substrate if the abnormal portion is detected in the periphery of the polished substrate.5. The polishing method according to claim 1 , wherein inspecting the periphery of the substrate for an abnormal portion comprises obtaining an image of the periphery of the substrate and inspecting the periphery of the substrate for an abnormal portion based on the image.6. The polishing method according to claim 5 , wherein inspecting the periphery of the substrate for an abnormal portion based on the image comprises inspecting the periphery of the substrate for an abnormal portion by comparing an index value claim 5 , which indicates a characteristic of the abnormal portion appearing on the image claim 5 , with a predetermined threshold value.7. ...

Подробнее
03-02-2022 дата публикации

Leak detection system and inspection method for the system

Номер: US20220034745A1
Принадлежит: Ebara Corp

A method of inspecting a leak detection system in a short time is disclosed. The leak detection system includes a leak detection line, an on-off valve, a flow mater, an operation controller configured to detect a fluid leak from a fluid line based on a first flow rate measured by the flow mater, a drain line, and a drain valve attached to the drain line. The inspection method includes: opening the on-off valve and the drain valve, with a supply valve and a return valve closed; measuring a second flow rate of fluid in the leak detection line by the flow mater; and determining that the leak detection system has a defect when the second flow rate is lower than a predetermined reference value.

Подробнее
15-01-2015 дата публикации

Film-thickness measuring apparatus, film-thickness measuring method, and polishing apparatus having the film-thickness measuring apparatus

Номер: US20150017880A1
Принадлежит: Ebara Corp

A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Подробнее
16-01-2020 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20200016720A1
Автор: NAKAMURA Akira
Принадлежит: EBARA CORPORATION

A film thickness measuring apparatus and an end point detector monitor a film thickness of a conductive film based on an output of an eddy current sensor disposed in a polishing table. The output of the eddy current sensor includes an impedance component, and when a resistance component and a reactance component of the impedance component are associated with the respective axes of a coordinate system having two orthogonal coordinate axes, at least some points on the coordinate system corresponding to the impedance component form at least a part of a circle. The film thickness measuring apparatus determines a distance between a point on the coordinate system and the center of the circle, determines the film thickness from the impedance component and corrects the determined film thickness using the determined distance. 1. A polishing apparatus comprising:a rotatable polishing table that can hold a polishing pad having a polishing surface;a top ring that can press a substrate to be polished against the polishing surface and can polish a conductive film on the substrate;an eddy current sensor disposed in the polishing table; anda monitoring apparatus that can monitor a film thickness of the conductive film based on an output of the eddy current sensor, whereinthe output of the eddy current sensor includes an impedance component,when a resistance component and a reactance component of the impedance component are associated with respective axes of a coordinate system having two orthogonal coordinate axes, at least some points on the coordinate system corresponding to the impedance component form at least a part of a circle, andthe monitoring apparatus determines a first distance between the point on the coordinate system and a center of the circle, determines a film thickness from the impedance component and can correct the determined film thickness using the determined first distance.2. The polishing apparatus according to claim 1 , wherein the monitoring apparatus ...

Подробнее
16-01-2020 дата публикации

SLURRY AND POLISHING METHOD

Номер: US20200016721A1
Автор: OOUCHI Mayumi
Принадлежит:

A slurry comprises abrasive grains, a glycol, and water, wherein an average particle diameter of the abrasive grains is 120 nm or smaller, and a pH is 4.0 or higher and lower than 8.0. A polishing method comprises a step of polishing a metal by use of the slurry. 1. A slurry comprising:abrasive grains;a glycol; andwater, whereinan average particle diameter of the abrasive grains is 120 nm or smaller, anda pH is 4.0 or higher and lower than 8.0.2. The slurry according to claim 1 , wherein the pH is higher than 5.0 and lower than 8.0.3. The slurry according to claim 1 , wherein the abrasive grains comprise silica.4. The slurry according to claim 1 , wherein a mass ratio of a content of the abrasive grains with respect to a content of the glycol is 0.01 to 150.5. The slurry according to claim 1 , wherein the glycol comprises a glycol in which a number of carbon atoms of an alkylene group between two hydroxy groups is 5 or less.6. The slurry according to claim 1 , wherein the glycol comprises at least one selected from the group consisting of ethylene glycol claim 1 , 1 claim 1 ,2-butanediol claim 1 , 1 claim 1 ,3-butanediol claim 1 , 1 claim 1 ,4-butanediol and 1 claim 1 ,5-pentanediol.7. The slurry according to claim 1 , wherein the glycol comprises ethylene glycol.8. The slurry according to claim 1 , further comprising an organic acid component.9. The slurry according to claim 1 , further comprising a metal corrosion preventive agent.10. The slurry according to claim 1 , for use in polishing a cobalt-based metal.11. A polishing method comprising a step of polishing a metal by use of the slurry according to .12. The polishing method according to claim 11 , wherein the metal comprises a cobalt-based metal.13. The slurry according to claim 1 , wherein the glycol comprises at least one selected from the group consisting of 1 claim 1 ,4-pentanediol claim 1 , 1 claim 1 ,5-pentanediol claim 1 , 1 claim 1 ,5-hexanediol claim 1 , 1 claim 1 ,6-hexanediol claim 1 , dipropylene ...

Подробнее
22-01-2015 дата публикации

Method of Controlling Polishing

Номер: US20150024659A1
Автор: David Jeffrey Drue
Принадлежит:

A method of controlling polishing includes polishing a substrate of a non-metallic layer undergoing polishing and a metal layer underlying the non-metallic layer; storing a metal reference spectrum, the metal reference spectrum being a spectrum of light reflected from a same metal material as the metal layer; measuring a sequence of raw spectra of light reflected from the substrate during polishing with an in-situ optical monitoring system; normalizing each raw spectrum in the sequence of spectra to generate a sequence of normalized spectra, of which normalizing includes a division operation where the measured spectrum is in the numerator and the metal reference spectrum is in the denominator; and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of normalized spectra. 119-. (canceled)20. A computer program product for controlling polishing , the computer program product tangibly embodied in a non-transitory computer readable medium and comprising instructions to cause a processor to:receive from an in-situ optical monitoring system, during polishing of a substrate that includes a non-metallic first layer undergoing polishing, a semiconductor second layer, and a third layer between the non-metallic first layer and the semiconductor second layer, a sequence of raw spectra of light reflected from the substrate;store a reference spectrum, the reference spectrum being a spectrum of light reflected from a same material as the third layer;normalize each raw spectrum in the sequence of raw spectra to generate a sequence of normalized spectra, wherein the instructions to normalize include a division operation in which the raw spectrum is in the numerator and the reference spectrum is in the denominator; anddetermine at least one of a polishing endpoint or an adjustment for a polishing rate based on at least one normalized predetermined spectrum from the sequence of ...

Подробнее
24-01-2019 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20190022820A1
Принадлежит:

A polishing apparatus which can measure a film thickness with high accuracy without affecting a polishing rate of a wafer is disclosed. The polishing apparatus includes: a polishing head configured to press a wafer against a polishing pad; an illuminating fiber having a distal end disposed in a flow passage formed in the polishing table; a spectrometer configured to resolve reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths; a light-receiving fiber having a distal end disposed in the flow passage; a liquid supply line communicating with the flow passage; a gas supply line communicating with the flow passage; a liquid supply valve attached to the liquid supply line; a gas supply valve attached to the gas supply line; and an operation controller configured to control operations of the liquid supply valve and the gas supply valve. 1. A polishing apparatus comprising:a polishing table for supporting a polishing pad;a polishing head configured to press a wafer against the polishing pad;a light source configured to emit light;an illuminating fiber coupled to the light source and having a distal end disposed in a flow passage formed in the polishing table;a spectrometer configured to resolve reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of wavelengths;a light-receiving fiber coupled to the spectrometer and having a distal end disposed in the flow passage;a processor configured to determine a film thickness of the wafer based on a spectral waveform indicating a relationship between intensity and wavelength of the reflected light;a liquid supply line communicating with the flow passage;a gas supply line communicating with the flow passage;a liquid supply valve attached to the liquid supply line;a gas supply valve attached to the gas supply line; andan operation controller configured to control operations of the liquid supply ...

Подробнее
23-01-2020 дата публикации

POLISHING-PAD LAMINATED STRUCTURE, POLISHING-PAD POSITIONING INSTRUMENT, AND METHOD OF ATTACHING A POLISHING PAD TO A POLISHING TABLE

Номер: US20200023489A1
Принадлежит:

A polishing-pad laminated structure which allows for easy alignment of a through-hole of a polishing pad with a sensor head installed in a polishing table is disclosed. The polishing-pad laminated structure includes a polishing pad and a release sheet. The polishing pad has a through-hole located at a position corresponding to a position of a sensor head disposed in the polishing table. The release sheet covers an adhesive surface of the polishing pad. The release sheet is divided into at least a first release sheet and a second release sheet. The first release sheet has a surface area smaller than a surface area of the second release sheet. 1. A polishing-pad laminated structure comprising:a polishing pad having a through-hole located at a position corresponding to a position of a sensor head disposed in a polishing table; anda release sheet covering an adhesive surface of the polishing pad, the release sheet being divided into at least a first release sheet and a second release sheet, the first release sheet having a surface area smaller than a surface area of the second release sheet.2. The polishing-pad laminated structure according to claim 1 , wherein the second release sheet has a through-hole at a same position as a position of the through-hole of the polishing pad.3. The polishing-pad laminated structure according to claim 1 , further comprising: a release assisting projection connected to an edge of the second release sheet.4. A polishing-pad positioning instrument for positioning a polishing pad with respect to a polishing table claim 1 , comprising: (i) a first positioning protrusion configured to be inserted into a table hole formed in a pad support surface of the polishing table, and', '(ii) a second positioning protrusion fixed to the first positioning protrusion, the second positioning protrusion having a cross-sectional shape corresponding to a cross-sectional shape of a through-hole formed in the polishing pad., 'a positioning structure configured ...

Подробнее
28-01-2021 дата публикации

POLISHING-AMOUNT SIMULATION METHOD FOR BUFFING, AND BUFFING APPARATUS

Номер: US20210023672A1
Принадлежит:

The invention simulates polishing amount taking into account pressure concentration that occurs in the vicinity of the edge of a substrate when a small-diameter buffing pad overhangs the substrate to be buffed. 18-. (canceled)9. A buffing apparatus for buffing a substrate by using a polishing pad of a smaller size than the substrate , wherein:the buffing apparatus is configured so that a part of the polishing pad oscillates over the substrate during buffing, andthe buffing apparatus includes a simulation section configured to simulate polishing amount of the substrate on a given buffing condition.10. The buffing apparatus of claim 9 , wherein the simulation section performs pressure correction for correcting an effect of pressure concentration that occurs when the polishing pad oscillates over the substrate.11. The buffing apparatus of claim 9 , wherein the simulation section calculates a buffing condition that is required to achieve a given target polishing amount.12. The buffing apparatus of claim 11 , wherein the buffing condition to be calculated is oscillation velocity of the polishing pad.13. The buffing apparatus of claim 11 , including a sensor for measuring the polishing amount of the substrate claim 11 , whereinthe simulation section compares the measured polishing amount of the substrate that is buffed on the calculated buffing condition with the target polishing amount and, if the target polishing amount is not achieved, calculates a required buffing condition based on the measured polishing amount and the target polishing amount. The present invention relates to a polishing-amount simulation method for buffing, and more specifically, to a method for calculating a pressure correction value for the polishing-amount simulation for buffing.Semiconductor devices become more and more highly integrated in late years, and circuit wiring and integrated devices are accordingly miniaturized. This trend has generated a need for planarization of semiconductor wafer ...

Подробнее
10-02-2022 дата публикации

RESISTIVITY-BASED ADJUSTMENT OF THRESHOLDS FOR IN-SITU MONITORING

Номер: US20220043095A1
Принадлежит:

A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on the sequence of adjusted thickness values. 1. A computer program product , tangibly encoded on a non-transitory computer readable media , comprising instructions to cause a computer system to:store a first resistivity value and a correlation function relating layer thickness of a conductive material having the first resistivity value at a temperature to a signal from an in-situ monitoring system, the first resistivity value generated from a textbook value or a measurement of a calibration substrate;receive a second resistivity value for a deposited conductive layer of the conductive material at the temperature generated by a measurement of the deposited conductive layer on a device substrate to be polished;receive a sequence of signal values that depend on thickness of the deposited conductive layer from an in-situ electromagnetic induction monitoring system that monitors the device substrate during polishing;generate a sequence of thickness values based on the sequence of signal values and the correlation function;calculate a threshold signal value ...

Подробнее
24-01-2019 дата публикации

SUBSTRATE PROCESSING APPARATUS AND METHOD OF DETECTING INDENTATION FORMED IN SUBSTRATE

Номер: US20190025096A1
Принадлежит:

A polishing device has a substrate stage which holds a substrate Wf, a processing head which processes a surface of the substrate Wf, an indentation detecting system which detects a position of an indentation in the substrate Wf, a movement mechanism which moves the processing head in a radial direction of the substrate stage, and a rotation mechanism which rotates the substrate stage, and the indentation detecting system has a fluid injection nozzle configured to inject a fluid to a circumferential edge portion of the substrate Wf when the substrate Wf is held on the substrate stage, a fluid measuring device which measures a physical quantity which is pressure or a flow rate of the fluid, and a position detector which detects the position of the indentation formed in the circumferential edge portion of the substrate Wf based on a change in physical quantity. 1. A substrate processing apparatus comprising:a substrate stage configured to hold a substrate thereon;a processing head configured to process a surface of the substrate;an indentation detecting system configured to detect a position of an indentation in the substrate;a movement mechanism configured to move the processing head in a radial direction of the substrate stage; anda rotation mechanism configured to rotate the substrate stage, a fluid injection nozzle configured to inject a fluid to a circumferential edge portion of the substrate when the substrate is held on the substrate stage;', 'a fluid measuring device configured to measure a physical quantity which is pressure or a flow rate of the fluid; and', 'a position detector configured to detect the position of the indentation formed in the circumferential edge portion of the substrate based on a change in physical quantity., 'wherein the indentation detecting system includes2. The substrate processing apparatus of claim 1 , wherein the position detector compares a difference between a newest measured value and a previously measured value of the physical ...

Подробнее
17-02-2022 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20220048155A1
Принадлежит: Kioxia Corporation

A polishing apparatus includes a first substrate holder capable of holding a substrate coated with a film. The apparatus also includes a first pad holder capable of holding a first pad. The apparatus further includes a first driver configured to translate the first pad on a surface of the film so as to cause the first pad to polish the film. 1. A polishing apparatus comprising:a first substrate holder arranged to hold a substrate coated with a film;a first pad holder arranged to hold a first pad; anda first driver configured to translate the first pad on a surface of the film so as to cause the first pad to polish the film.2. The polishing apparatus according to claim 1 , wherein the first pad holder has a linear shape in plan-view.3. The polishing apparatus according to claim 1 , wherein a length of a longer side of the first pad holder is longer than a diameter of the first substrate holder.4. The polishing apparatus according to claim 1 , further comprising:a second pad holder configured to hold a second pad; anda second driver configured to rotate the second pad on the surface of the film so as to cause the second pad to polish the film.5. The polishing apparatus according to claim 4 , wherein the second pad holder has a circular shape in plan-view.6. The polishing apparatus according to claim 4 , wherein a diameter of the second pad holder is shorter than the diameter of the first substrate holder.7. The polishing apparatus according to claim 4 , wherein the first or second pad holder is configured to apply to the first pad or the second pad an asymmetrical load with respect to a center plane or a center axis of the first pad or the second pad.8. The polishing apparatus according to claim 4 , wherein the first pad or the second pad has a curved or inclined side surface at least on a center axis side of the substrate.9. The polishing apparatus according to claim 4 , wherein a surface of the first pad or the second pad has friction coefficients of an asymmetrical ...

Подробнее
31-01-2019 дата публикации

SILICON WAFER SINGLE-SIDE POLISHING METHOD

Номер: US20190030676A1
Принадлежит: SUMCO CORPORATION

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition. 1. A silicon wafer single-side polishing method of holding , by a polishing head , a silicon wafer in which a silicon oxide film is formed on a bare silicon surface , and pressing the silicon wafer against a rotatable platen with a polishing cloth attached thereto while rotating the silicon wafer , to polish one side of the silicon wafer facing the rotatable platen , the silicon wafer single-side polishing method comprising:a first polishing step of performing polishing on the one side of the silicon wafer under a first polishing condition relating to an applied pressure for pressing the silicon wafer and a relative speed of the silicon wafer and the rotatable platen; anda second polishing step of performing polishing on the one side of the silicon wafer under a second polishing condition in which at least one of the applied pressure and the relative speed in the first polishing condition is changed, after the first polishing step,wherein a polishing rate ratio of a silicon oxide polishing rate to a silicon polishing rate according to the first polishing condition is higher than a polishing rate ratio of a silicon oxide polishing rate to a silicon polishing rate according to the second polishing condition.2. The silicon wafer single-side polishing method according to ...

Подробнее
31-01-2019 дата публикации

METHOD OF IDENTIFYING AND TRACKING ROLL TO ROLL POLISHING PAD MATERIALS DURING PROCESSING

Номер: US20190030677A1
Принадлежит:

Implementations described herein generally relate to methods and apparatus for polishing substrates, more particularly, to methods and apparatus for identifying and/or tracking polishing material in a roll-to-roll polishing system. In one implementation, a method of polishing a substrate is provided. The method comprises advancing a polishing material across a surface of a platen. The polishing material has a polishing surface and an opposing backside surface and the backside surface has a pattern of identifying features formed thereon. The method further comprises sensing the movement of the pattern of identifying features past a detector assembly. The method further comprises controlling a position of the polishing material relative to the platen based on data received from the sensed movement of the pattern of identifying features. 1. An apparatus for polishing a substrate , comprising: a platen for supporting a polishing material having a polishing surface and an opposing backside surface, wherein the backside surface has a plurality of identifying features formed thereon;', 'a supply assembly adapted to provide the polishing material to the platen; and', 'a take-up assembly adapted to receive the polishing material transferred across at least a portion of the platen from the supply assembly;, 'a polishing module, comprisingone or more detector assemblies disposed adjacent to the backside surface of the polishing material, wherein the one or more detector assemblies are positioned to sense a change in position of the plurality of identifying features formed on the backside surface as the polishing material is transferred between the supply assembly and the take-up assembly; anda system controller adapted to receive a signal from the one or more detector assemblies and control the position of the polishing material relative to the platen using an actuator coupled to at least one of the supply assembly and the take-up assembly.2. The apparatus of claim 1 , wherein ...

Подробнее
11-02-2016 дата публикации

PNEUMATIC CONNECTION TO CARRIER HEAD AND MONITORING OF THE CONNECTION

Номер: US20160039066A1
Автор: Schauer Ronald Vern
Принадлежит: Applied Materials, Inc.

A chemical mechanical polishing system includes a carrier head having a flexible membrane and a chamber to apply pressure to the flexible membrane, a pressure control unit, a pressure supply line connecting the pressure control unit to the chamber, and a sensor located along the pressure supply line to detect a contaminant in the pressure supply line. 21. A chemical mechanical polishing system , comprising:a carrier head having a flexible membrane and a plurality of chambers to apply pressure to the flexible membrane;a motor to rotate the carrier head;a drive shaft connecting the motor to the carrier head, the drive shaft having a plurality of passages connected to the plurality of chambers;a pressure control system; anda rotary union to connect the plurality of passages in the drive shaft to the pressure control system, wherein the rotary union includes a substantially cylindrical body, a plurality of fittings arranged in a vertical line along the body, and a plurality of flexible tubes connected to the plurality of fittings and extending in a curve around a portion of the body to connect to the pressure control system.22. The polishing system of claim 21 , wherein the plurality of flexible tubes connect to a second plurality of fittings arranged in a second vertical line.23. The polishing system of claim 21 , comprising a plurality of optical sensors located along the tubes.24. The polishing system of claim 23 , wherein the optical sensors are clipped to the exterior of the tubes.25. The polishing system of claim 23 , wherein the plurality of tubes each include a substantially identical portion of tubing.26. The polishing system of claim 25 , wherein the substantially identical portion of tubing is different in at least one of color claim 25 , material or thickness than a remainder of the plurality of tubes.27. The polishing system of claim 25 , wherein the substantially identical portion of tubing comprises plastic claim 25 , glass or quartz.28. The polishing ...

Подробнее
30-01-2020 дата публикации

CHEMICAL-MECHANICAL POLISHING WITH VARIABLE-PRESSURE POLISHING PADS

Номер: US20200035495A1
Принадлежит:

Apparatus and methods of chemical-mechanical polishing of a layer on a wafer. A plurality of polishers arranged on a rotating plate, and a carrier is configured to hold the wafer and to place the layer in contact with the polishers. Each polisher includes a platen and a force-applying device operatively connected to the platen, and the force-applying device is configured to apply a variable force to the platen in order to change a rate of material removal over an area of the layer on the wafer contacted by a polishing pad carried by the platen. 1. An apparatus for polishing a layer on a wafer , the apparatus comprising:a drive system;a plate configured to be rotated by the drive system;a plurality of polishers arranged on the plate, each polisher including a platen and a force-applying device operatively connected to the platen, the force-applying device configured to apply a variable force to the platen; anda carrier configured to hold the wafer and to place the layer in contact with the polishers.2. The apparatus of wherein the force-applying device of each polisher is a dashpot device.3. The apparatus of wherein the force-applying device of each polisher is a spring device.4. The apparatus of wherein the force-applying device of each polisher is an actuator.5. The apparatus of further comprising:a controller coupled with the actuator of each polisher,wherein the controller is configured to cause the actuator of each polisher to be operated to provide the variable force.6. The apparatus of wherein each polisher includes a sensor coupled with the controller claim 5 , and the sensor is configured to generate a signal in response to a pressure applied by an area contacted on the wafer to the platen and to provide the signal as feedback to the controller for closed-loop control.7. The apparatus of wherein the controller includes one or more processors and a memory coupled with the one or more processors claim 6 , the memory including instructions that claim 6 , when ...

Подробнее
15-02-2018 дата публикации

Advanced Polishing System

Номер: US20180043495A1
Принадлежит:

A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove. 1. A method for polishing a polishing pad , comprising:detecting a presence of a defect formed on a groove of a polishing pad;removing the defect from the groove of the polishing pad;after removing the defect, measuring a remaining depth of the groove; andbased on the measured remaining depth of the groove, applying a polishing condition on the groove.2. The method of claim 1 , wherein detecting the presence of the defect includes forming a topographic image of a top surface of the polishing pad.3. The method of claim 1 , further comprising claim 1 , a first sensor for detecting the present of the defect claim 1 , wherein the first sensor includes a device selected from the group consisting of a three-dimensional laser camera claim 1 , an acoustic wave camera claim 1 , and a scanning electron microscopy device.4. The method of claim 1 , further comprising a second sensor for measuring the remaining depth of the groove claim 1 , wherein the second sensor includes a device selected from the group consisting of an optical sensor and an acoustic wave sensor.5. The method of claim 1 , further comprising applying a polishing slurry onto the polishing pad prior to detecting the presence of the defect.6. The method of claim 1 , wherein the polishing pad includes a plurality of grooves claim 1 , each of the plurality of the grooves having a depth.7. The method of claim 6 , wherein a sensor is further configured to measure the depth of each of the plurality of the grooves.8. The method of claim 1 , wherein the polishing condition includes a condition selected from the group consisting of a polishing time applied to the polishing ...

Подробнее
15-02-2018 дата публикации

POLISHING HEAD, CMP APPARATUS INCLUDING A POLISHING HEAD, AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A CMP APPARATUS

Номер: US20180043496A1
Автор: YAMAMOTO Sukehiro
Принадлежит:

In a polishing head for a CMP apparatus, a stress distributing plate made of metal or ceramic is placed between a wafer on a polishing pad and an air bag configured to press down the wafer, and a shock absorbing sheet is provided between the stress distributing plate and the underlying wafer, to thereby make pressure applied from the air bag to the wafer uniform. 1. A polishing head for a CMP apparatus , comprising:a polishing pad;an air bag mounted on a surface of the polishing pad, and configured to press a front surface of a wafer against the polishing pad from a direction of a back surface of the wafer;a retainer ring surrounding a side surface of the air bag;atop ring enveloping the air bag, the wafer, and the retainer ring; anda stress distributing plate and a shock absorbing sheet both provided between the air bag and the wafer.2. A polishing head according to claim 1 , wherein the stress distributing plate has a top surface that is in contact with the air bag and that has a spherical shape.3. A polishing head according to claim 2 , wherein the spherical shape comprises a convex spherical shape.4. A polishing head according to claim 3 , wherein the convex spherical shape is provided partially below an air flow inlet/outlet of the air bag.5. A polishing head according to claim 2 , wherein the spherical shape comprises a concave spherical shape.6. A polishing head according to claim 5 , wherein the concave spherical shape is provided partially below an air flow inlet/outlet of the air bag.7. A polishing head according to claim 1 , wherein the stress distributing plate has a bottom surface which is in contact with the shock absorbing sheet and that has a spherical shape.8. A polishing head according to claim 7 , wherein the spherical shape comprises a convex spherical shape.9. A polishing head according to claim 7 , wherein the spherical shape comprises a concave spherical shape.10. A polishing head according to claim 9 , wherein the concave spherical shape is ...

Подробнее
06-02-2020 дата публикации

SLURRY RECYCLING FOR CHEMICAL MECHANICAL POLISHING SYSTEM

Номер: US20200043748A1
Автор: Liu Wen-Kuei

The present disclosure describes an apparatus and a method for a chemical mechanical polishing (CMP) process that recycles used slurry as another slurry supply. The apparatus includes a pad on a rotation platen, a first feeder and a second feeder where each of the first and the second feeder is fluidly connected to a respective flow regulator and configured to dispense a first and a second slurry on the pad, a flotation module configured to provide a recycled slurry, and a detection module configured to detect a polishing characteristic associated with polishing the substrate. The flotation module further includes an inlet configured to provide a fluid sprayed from the pad and a tank configured to store chemicals that include a frother and a collector configured to chemically bond with the fluid. 1. A polishing system for polishing a substrate , comprising:a pad on a rotating platen;a first feeder and a second feeder, wherein each of the first and the second feeders is fluidly connected to a respective flow regulator and configured to dispense a respective first and a second slurry on the pad; an inlet configured to receive a fluid sprayed from the pad; and', 'a tank configured to store a plurality of chemicals that comprise a frother and a collector configured to chemically bond with the fluid; and, 'a flotation module configured to provide a recycled slurry, wherein the flotation module comprisesa detection module configured to detect a polishing characteristic associated with polishing the substrate.2. The polishing system of claim 1 , wherein the flow regulator of the second feeder is fluidly connected to the flotation module.3. The polishing system of claim 1 , wherein the flow regulator of the first feeder shares the flow regulator of the second feeder.4. The polishing system of claim 1 , wherein the flow regulator comprises a mass flow controller claim 1 , a flow control valve claim 1 , a proportional valve claim 1 , or a solenoid valve.5. The polishing ...

Подробнее
06-02-2020 дата публикации

Substrate holding apparatus, substrate suction determination method, substrate polishing apparatus, substrate polishing method, method of removing liquid from upper suface of wafer to be polished, elastic film for pressing wafer against polishing pad, substrate release method, and constant amount gas supply apparatus

Номер: US20200043773A1
Принадлежит: Ebara Corp

A substrate holding apparatus is provided, which includes a top ring main body to which an elastic film having a surface that can suck a substrate can be attached, a first line communicating with a first area of the plurality of areas, a second line communicating with a second area different from the first area of the plurality of areas, a pressure adjuster that can pressurize the first area by feeding fluid into the first area through the first line and can generate negative pressure in the second area through the second line, and a determiner that performs determination of whether or not the substrate is sucked to the elastic film based on a volume of the fluid fed into the first area or a measurement value corresponding to pressure in the first area.

Подробнее
06-02-2020 дата публикации

SYSTEMS AND METHODS FOR SUCTION PAD ASSEMBLIES

Номер: US20200043814A1
Принадлежит:

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data. 1. A system , comprising:a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), anda platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side;a pump configured to produce suction at the suction opening to adhere the second side to the platen; anda sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.2. The system of claim 1 , wherein the suction opening is in fluid communication with the pump.3. The system of claim 1 , wherein the pad is configured to slide along the platen on the second side.4. The system of claim 1 , wherein the first side is textured differently than the second side.5. The system of claim 4 , wherein the second side is smoother than the first side.6. The system of claim 1 , wherein the suction opening is part of a plurality of suction openings along an upper surface of the platen claim 1 , wherein there is at least one suction opening per 5 square centimeters to least one suction opening per 30 square centimeters along the upper ...

Подробнее
25-02-2021 дата публикации

Polishing Head with Membrane Position Control

Номер: US20210053178A1
Принадлежит:

A carrier head for chemical mechanical polishing includes a housing for attachment to a drive shaft, a membrane assembly beneath the housing with a space between the housing and the membrane assembly defining a pressurizable chamber, and a sensor in the housing configured to measure a distance from the sensor to the membrane assembly. 1. A carrier head for chemical mechanical polishing , comprising:a housing for attachment to a drive shaft;a membrane assembly beneath the housing, and wherein a space between the housing and the membrane assembly defines a pressurizable chamber; anda sensor in the housing configured to measure a distance from the sensor to the membrane assembly.2. The carrier head of claim 1 , wherein the sensor is a radar claim 1 , laser claim 1 , or ultrasonic sensor.3. The carrier head of claim 1 , wherein the flexure is sufficiently stiff to center the membrane assembly within the housing.4. The carrier head of claim 1 , further comprising a target on the membrane assembly below the sensor.5. The carrier head of claim 4 , wherein the housing includes an upper carrier body and a lower carrier body that is vertically movable relative to the upper carrier body claim 4 , and wherein the sensor is mounted on the upper carrier body.6. The carrier head of claim 5 , comprising a window through the lower carrier between the target and the sensor.7. The carrier head of claim 1 , wherein the flexure seals the pressurizable chamber.8. The carrier head of claim 1 , further comprising a retaining ring connected to the housing claim 1 , wherein wear on the retaining ring causes the distance to decrease.9. A chemical mechanical polishing system claim 1 , comprising:a platen; a housing for attachment to a drive shaft,', 'a membrane assembly beneath the housing, wherein a space between the housing and the membrane assembly defines a pressurizable chamber, and', 'a sensor in the housing configured to measure a distance from the sensor to the membrane assembly; and, ...

Подробнее
25-02-2021 дата публикации

Chemical mechanical planarization tool

Номер: US20210053180A1

A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Подробнее
25-02-2021 дата публикации

DUAL MEMBRANE CARRIER HEAD FOR CHEMICAL MECHANICAL POLISHING

Номер: US20210053183A1
Принадлежит:

A carrier head for chemical mechanical polishing includes a base assembly and a membrane assembly connected to the base assembly. The membrane assembly includes a membrane support, an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate. 1. A carrier head for chemical mechanical polishing , comprising:a base assembly; and a membrane support,', 'an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and', 'an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate., 'a membrane assembly connected to the base assembly, the membrane assembly including2. The carrier head of claim 1 , wherein each chamber of the plurality of individually pressurizable inner chambers is ...

Подробнее
13-02-2020 дата публикации

SUBSTRATE ROTATION DEVICE, SUBSTRATE CLEANING DEVICE, SUBSTRATE PROCESSING DEVICE, AND CONTROL METHOD FOR SUBSTRATE ROTATION DEVICE

Номер: US20200047310A1
Принадлежит:

An advanced substrate rotation device is provided. A substrate rotation device is disclosed. The substrate rotation device includes an outer cylinder, an inner cylinder positioned inside the outer cylinder, a motor for rotating the inner cylinder, a magnetic bearing for magnetically levitating the inner cylinder, and a substrate holder disposed on the inner cylinder. The motor is a radial motor including a motor stator mounted on the outer cylinder, and a motor rotor mounted on the inner cylinder. The magnetic bearing is a radial magnetic bearing including a magnetic bearing stator mounted on the outer cylinder, and a magnetic bearing rotor mounted on the inner cylinder. The magnetic bearing is configured to magnetically levitate the inner cylinder with an attractive force between the magnetic bearing stator and the magnetic bearing rotor. 1. A substrate rotation device comprising:an outer cylinder;an inner cylinder positioned inside the outer cylinder;a motor for rotating the inner cylinder;a magnetic bearing for magnetically levitating the inner cylinder; anda substrate holder disposed on the inner cylinder, wherein a motor stator mounted on the outer cylinder; and', 'a motor rotor mounted on the inner cylinder,, 'the motor is a radial motor includes a magnetic bearing stator mounted on the outer cylinder; and', 'a magnetic bearing rotor mounted on the inner cylinder, and, 'the magnetic bearing is a radial magnetic bearing includesthe magnetic bearing is configured to magnetically levitate the inner cylinder with an attractive force between the magnetic bearing stator and the magnetic bearing rotor.2. The substrate rotation device according to claim 1 , whereinthe inner cylinder is positioned movable up and down inside the outer cylinder,the substrate rotation device includes a control unit, and a first position; and', 'a second position that is a position higher than the first position., 'the control unit is configured to control a bias current of the magnetic ...

Подробнее
08-05-2014 дата публикации

POLISHING METHOD AND POLISHING APPARATUS

Номер: US20140127973A1
Принадлежит:

A polishing apparatus polishes a substrate by moving the substrate and a polishing pad relative to each other. The apparatus includes: an elastic modulus measuring device configured to measure an elastic modulus of the polishing pad, and a polishing condition adjustor configured to adjust polishing conditions of the substrate based on a measured value of the elastic modulus. The polishing conditions include pressure of a retaining ring, arranged around the substrate, exerted on the polishing pad and a temperature of the polishing pad. 1. A polishing method for polishing a substrate by moving the substrate and a polishing pad relative to each other , said method comprising;measuring an elastic modulus of the polishing pad; andadjusting a polishing condition of the substrate based on a measured value of the elastic modulus.2. The polishing method according to claim 1 , wherein a retaining ring is arranged around the substrate claim 1 , and the polishing condition includes pressure of the retaining ring exerted on the polishing pad.3. The polishing method according to claim 2 , wherein the pressure of the retaining ring is regulated in accordance with the measured value of the elastic modulus and a polishing condition data which indicates a relationship between the elastic modulus and the pressure of the retaining ring.4. The polishing method according to claim 3 , wherein the polishing condition data is obtained in advance by polishing a plurality of sample substrates while changing a combination of the elastic modulus and the pressure of the retaining ring claim 3 , measuring an amount of rounded edge of each of the plurality of sample substrates that have been polished claim 3 , establishing an association between the pressure of the retaining ring and the amount of rounded edge with respect to each elastic modulus claim 3 , and determining the pressure of the retaining ring that minimizes the amount of rounded edge with respect to each elastic modulus.5. The ...

Подробнее
13-02-2020 дата публикации

SENSOR TARGET COVER USED IN COMBINATION WITH LIQUID LEVEL DETECTION SENSOR, WET PROCESSING DEVICE, SUBSTRATE PROCESSING DEVICE, AND SENSOR ASSEMBLY

Номер: US20200049546A1
Принадлежит: EBARA CORPORATION

A sensor target cover capable of preventing an optical liquid level detection sensor from erroneously detecting a rise in a liquid level is provided. A sensor target cover is used in combination with an optical liquid level detection sensor. The sensor target cover includes a reflecting plate, an inner wall structure surrounding the reflecting plate, and an outer wall structure surrounding the inner wall structure. A gap is formed between the inner wall structure and the outer wall structure. 1. A sensor target cover used in combination with an optical liquid level detection sensor , the sensor target cover comprising:a reflecting plate;an inner wall structure surrounding the reflecting plate; andan outer wall structure surrounding the inner wall structure,wherein a gap is formed between the inner wall structure and the outer wall structure.2. The sensor target cover according to claim 1 , wherein a lower end of the outer wall structure is positioned higher than a lower end of the inner wall structure claim 1 , and an upper end of the outer wall structure is positioned higher than an upper end of the inner wall structure.3. The sensor target cover according to claim 1 , wherein an inner space of the inner wall structure is partitioned into a first room and a second room by the reflecting plate.4. The sensor target cover according to claim 1 , wherein the inner wall structure includes an inner protection wall facing the reflecting plate and two inner walls disposed on both sides of the reflecting plate and the inner protection wall.5. The sensor target cover according to claim 4 , wherein the outer wall structure includes two outer walls respectively disposed on the outer sides of the two inner walls claim 4 , an outer protection wall disposed on the outer side of the inner protection wall claim 4 , and a ceiling wall.6. The sensor target cover according to claim 5 , wherein gaps are respectively formed between outer surfaces of the two inner walls and inner surfaces ...

Подробнее
26-02-2015 дата публикации

MEASURING METHOD OF SURFACE ROUGHNESS OF POLISHING PAD

Номер: US20150056891A1
Автор: MATSUO Hisanori
Принадлежит:

There is disclosed a measuring method of a surface roughness of a polishing pad which can measure a surface roughness index of the polishing pad showing a strong relationship with polishing performance. A method for measuring a surface roughness of a polishing pad includes acquiring an image of a surface of a polishing pad by using a laser microscope, selecting only a region which has a height larger than an average height from the acquired image, and calculating a surface roughness from only the selected region. 1. A method for measuring a surface roughness of a polishing pad , comprising:acquiring an image of a surface of a polishing pad by using a laser microscope;selecting only a region which has a height larger than an average height from the acquired image; andcalculating a surface roughness from only the selected region.2. The method for measuring a surface roughness of a polishing pad according to claim 1 , wherein in the selecting the region claim 1 , the region having an area of 500 μmor less is selected.3. The method for measuring a surface roughness of a polishing pad according to claim 1 , wherein in the acquiring the image claim 1 , an area of the acquired image is 100000 μmor less.4. The method for measuring a surface roughness of a polishing pad according to claim 1 , wherein in the selecting the region claim 1 , only the plural regions which have a height larger than the average height are selected from the acquired image.5. The method for measuring a surface roughness of a polishing pad according to claim 4 , wherein in the determining the surface roughness claim 4 , surface roughnesses respectively determined from calculation regions at a plurality of locations are averaged to thereby determine the surface roughness.6. The method for measuring a surface roughness of a polishing pad according to claim 1 , wherein the calculated surface roughness is at least one of arithmetical mean deviation of the roughness profile (Ra) claim 1 , root mean square ...

Подробнее
01-03-2018 дата публикации

MONITORING OF POLISHING PAD THICKNESS FOR CHEMICAL MECHANICAL POLISHING

Номер: US20180056476A1
Принадлежит:

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad, and a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner. 1. An apparatus for chemical mechanical polishing , comprising:a platen having a surface to support a polishing pad;a carrier head to hold a substrate against a polishing surface of the polishing pad;a pad conditioner including a conductive body to be pressed against the polishing surface;an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad; anda controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner.2. The apparatus of claim 1 , wherein the conductive body comprises a conductive sheet and the monitoring system comprises an eddy current monitoring system in which the magnetic field generates an eddy current in the conductive sheet.3. The apparatus of claim 1 , wherein the conductive body includes an aperture and the monitoring system comprises an inductive monitoring system in which the magnetic field generates a current in the conductive body that flows around the aperture.4. The apparatus of claim 1 , wherein the controller is configured to compare the signal from the monitoring system ...

Подробнее
01-03-2018 дата публикации

POLISHING SYSTEM WITH ANNULAR PLATEN OR POLISHING PAD FOR SUBSTRATE MONITORING

Номер: US20180056477A1
Принадлежит:

A polishing system includes a platen having a top surface, an annular polishing pad supported on the platen, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure from which the carrier head is suspended and which is configured to move the hold the carrier head laterally across the polishing pad, and a controller. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen, and the inner edge of the annular polishing pad is positioned around the axis of rotation. The controller is configured to cause the support structure to position the carrier head such that a portion of the substrate overhangs the inner edge of the annular polishing pad while the substrate is contacting the polishing pad. 1. A polishing system , comprising:a platen having a top surface and an aperture in the top surface in approximately a center of the platen such that the top surface is an annular surface to support an annular polishing pad, the platen rotatable about an axis of rotation that passes through approximately the center of the platen;a carrier head to hold a substrate in contact with the annular polishing pad; andan in-situ monitoring system having a probe positioned in or below the aperture and configured to monitor a portion of the substrate that overhangs an inner edge of the annular surface.2. The polishing system of claim 1 , wherein the aperture comprises a recess extending partially but not entirely through the platen.3. The polishing system of claim 2 , comprising a conduit through the platen for liquid polishing residue to drain from the recess.4. The polishing system of claim 1 , wherein the aperture comprises a passage extending entirely through the platen.5. The polishing system of claim 4 , comprising a ring bearing supporting platen.6. The polishing system of claim 5 , wherein the probe is supported on a structure that extends vertically through the ring bearing.7. The polishing ...

Подробнее
15-05-2014 дата публикации

SUBSTRATE HOLDING APPARATUS AND POLISHING APPARATUS

Номер: US20140134924A1
Автор: SHINOZAKI Hiroyuki
Принадлежит: EBARA CORPORATION

A substrate holding apparatus holds a substrate and presses the substrate against a polishing pad. The substrate holding apparatus includes a top ring configured to hold the substrate and press the substrate against the polishing pad, a vertical movement mechanism configured to vertically move the top ring, a torque detector configured to detect a torque of the vertical movement mechanism when the top ring is being lowered or being lifted by the vertical movement mechanism, and a controller in which a torque of the vertical movement mechanism when the top ring is brought into contact with a surface of the polishing pad at the time of a pad search is preset as a torque limit value. The controller calculates a torque correction amount from the torque detected by the torque detector and a preset reference value, and corrects the torque limit value by using the torque correction amount. 1. A substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing pad , said substrate holding apparatus comprising:a top ring configured to hold the substrate and press the substrate against the polishing pad;a vertical movement mechanism configured to vertically move said top ring;a torque detector configured to detect a torque of said vertical movement mechanism when said top ring is being lowered or being lifted by said vertical movement mechanism; anda controller in which a torque of said vertical movement mechanism when said top ring is brought into contact with a surface of the polishing pad at the time of a pad search is preset as a torque limit value, said pad search being defined as a process in which said top ring is lowered and brought into contact with the surface of the polishing pad;wherein said controller calculates a torque correction amount from said torque detected by said torque detector and a preset reference value, and corrects said torque limit value by using said torque correction amount.2. The substrate holding ...

Подробнее
02-03-2017 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20170057049A1
Принадлежит:

A polishing apparatus includes a polishing table for supporting a polishing pad and a substrate holding device for pressing a substrate against the polishing pad. The substrate holding device includes an elastic film to form multiple pressure chambers to press the substrate, and a pressure control unit controlling pressure of the pressure chambers. The pressure control unit includes a first flow path connected to a first pressure chamber, and first and second pressure regulation mechanisms. The pressure control unit performs switching control from first pressure regulation mechanism to second pressure regulation mechanism when a set pressure within first pressure chamber reaches a first threshold value. Then, the pressure control unit performs switching control from second pressure regulation mechanism to first pressure regulation mechanism when the set pressure within the first pressure chamber reaches a second threshold value lower than the first threshold value. 1. A polishing apparatus comprising:a polishing table configured to support a polishing pad;a substrate holding device configured to press a substrate against the polishing pad and including an elastic film configured to form a plurality of pressure chambers to press the substrate, a head body to which the elastic film is attached, and a retainer ring disposed to surround the substrate; anda pressure control unit configured to control a pressure of the plurality of pressure chambers,wherein the pressure control unit includes a first flow path connected to a first pressure chamber which is one of the plurality of pressure chambers, and includes a first pressure regulation mechanism and a second pressure regulation mechanism that are provided, in parallel with each other, in the first flow path, the pressure control unit being configured to control the pressure of the first pressure chamber by performing switching between the first pressure regulation mechanism and the second pressure regulation mechanism.2 ...

Подробнее
04-03-2021 дата публикации

METHOD OF DETECTING ABNORMALITY OF A ROLLER WHICH TRANSMITS A LOCAL LOAD TO A RETAINER RING, AND POLISHING APPARATUS

Номер: US20210060723A1
Принадлежит:

A method of detecting abnormality of a roller which transmits a local load to a retainer ring is disclosed. The method comprises: rotating a polishing head which includes a head body and a retainer ring, the head body having a pressing surface for pressing a substrate, the retainer ring being arranged so as to surround the pressing surface; measuring a torque for rotating the polishing head, while rotating a rotary ring together with the polishing head and while exerting a local load to a stationary ring located on the rotary ring, the rotary ring being fixed to the retainer ring and having a plurality of rollers; generating a torque waveform indicating relationship between measured values of the torque for rotating the polishing head and measuring times of the torque; performing Fourier-transform process on the torque waveform to determine an intensity of frequency component of the torque waveform; and determining that at least one of the rollers malfunctions when the determined intensity of the frequency component is larger than a predetermined threshold value. 1. A method comprising:rotating a polishing head which includes a head body and a retainer ring, the head body having a pressing surface for pressing a substrate, the retainer ring being arranged so as to surround the pressing surface;measuring a torque for rotating the polishing head, while rotating a rotary ring together with the polishing head and while exerting a local load to a stationary ring located on the rotary ring, the rotary ring being fixed to the retainer ring and having a plurality of rollers;generating a torque waveform indicating relationship between measured values of the torque and measuring times of the torque;performing Fourier-transform process on the torque waveform to determine an intensity of frequency component of the torque waveform; anddetermining that at least one of the rollers malfunctions when the determined intensity of the frequency component is larger than a predetermined ...

Подробнее
22-05-2014 дата публикации

Recording Measurements by Sensors for a Carrier Head

Номер: US20140138355A1
Автор: YAVELBERG Simon
Принадлежит:

A pressure control assembly for a carrier head of a polishing apparatus includes a pressure supply line configured to fluidically connect to a chamber of a carrier head, a sensor to responsive to pressure in the chamber and configured to generate a signal representative of the pressure, and a pneumatic control unit configured to receive the signal, to control a pressure applied to the pressure supply line, and to record the signal in a non-transitory storage media of a storage device removably attached to the pneumatic control unit. 1. A pressure control assembly for a carrier head of a polishing apparatus , comprising:a pressure supply line configured to fluidically connect to a chamber of a carrier head;a sensor to responsive to pressure in the chamber and configured to generate a signal representative of the pressure; anda pneumatic control unit configured to receive the signal, to control a pressure applied to the pressure supply line, and to record the signal in a non-transitory storage media of a storage device removably attached to the pneumatic control unit.2. The assembly of claim 1 , further comprising the storage device claim 1 , and wherein the storage device comprises a flash memory.3. The assembly of claim 1 , wherein the pneumatic control unit comprises a USB port and the pneumatic control unit is configured to record the signal to the storage device attached to the USB port.4. The assembly of claim 1 , wherein the pneumatic control unit is configured to record the signal acquired during processing of a plurality of substrates.5. The assembly of claim 1 , wherein the pneumatic control unit is configured to cause the storage device to store signals received during processing of a most recent plurality of substrates.6. The assembly of claim 5 , wherein the most recent plurality of substrates comprises at most 20 substrates.7. The assembly of claim 5 , wherein processing of the plurality of substrates includes one or more of loading or unloading the ...

Подробнее
22-05-2014 дата публикации

Multi-Platen Multi-Head Polishing Architecture

Номер: US20140141695A1
Принадлежит: Applied Materials Inc

A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.

Подробнее
17-03-2022 дата публикации

Method for polishing a semiconductior wafer

Номер: US20220080549A1
Принадлежит: SILTRONIC AG

Semiconductor wafers are polished simultaneously on both the front and the rear sides between an upper polishing plate and a lower polishing plate, each covered with a polishing pad, wherein a polishing gap (x1+x2) corresponding to a difference in the respective distances between facing surfaces of upper polishing pad and lower polishing pad which come into contact with the semiconductor wafer at the inner edge and at the outer edge of the polishing pads is changed incrementally or continuously during the polishing process.

Подробнее
09-03-2017 дата публикации

SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

Номер: US20170066101A1
Автор: YAMAGUCHI Kuniaki
Принадлежит:

The present invention relates to a substrate processing system and a substrate processing method capable of cleaning a processing-liquid supply line. A substrate processing system includes: a substrate processing apparatus () configured to process a substrate W; and a flushing device for cleaning a distribution line () and a processing-liquid supply line (). The flushing device includes: a cleaning-liquid supply line () coupled to the distribution line (); a drain mechanism () configured to direct a cleaning liquid, supplied into the processing-liquid supply line () through the distribution line (), to a liquid disposal area (); a supply switching valve () configured to allow only the processing liquid or the cleaning liquid to flow in the distribution line (); and an operation controller () configured to control operations of the drain mechanism () and the supply switching valve (). 1. A substrate processing system comprising:a substrate processing apparatus configured to process a substrate while directly or indirectly supplying a processing liquid from a processing-liquid supply nozzle onto the substrate, the processing-liquid supply nozzle being coupled to a processing-liquid supply line;a distribution line that couples the processing-liquid supply line to a processing-liquid supply source; and a cleaning-liquid supply line coupled to the distribution line;', 'a drain mechanism configured to direct a cleaning liquid, supplied into the processing-liquid supply line through the distribution line, to a liquid disposal area;', 'a supply switching valve attached to the distribution line and the cleaning-liquid supply line, the supply switching valve being configured to allow only the processing liquid or the cleaning liquid to flow into the distribution line; and', 'an operation controller configured to control operations of the drain mechanism and the supply switching valve,, 'a flushing device configured to clean the distribution line and the processing-liquid ...

Подробнее
11-03-2021 дата публикации

METHOD OF USING POLISHING PAD

Номер: US20210069855A1
Принадлежит:

A method of using a polishing pad includes applying a slurry to a first location on the polishing pad. The method further includes rotating the polishing pad. The method further includes spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region includes a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance. The method further includes spreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves. 1. A method of using a polishing pad , the method comprising:applying a slurry to a first location on the polishing pad;rotating the polishing pad;spreading the slurry across a first region of the polishing pad at a first rate, wherein the first region comprises a plurality of first grooves, a first material property of the first region varies in a thickness direction of the polishing pad, each of the plurality of first grooves extends through at least two variations in the first material property, and the first material property comprises porosity, specific gravity or absorbance; andspreading the slurry across a second region of the polishing pad at a second rate different from the first rate, wherein the second region comprises a plurality of second grooves.2. The method of claim 1 , wherein the slurry is applied simultaneously with rotating the polishing pad.3. The method of claim 1 , wherein spreading the slurry across the second region comprises spreading the slurry at the second rate faster than the first rate.4. The method of claim 1 , wherein spreading the slurry across the second region comprises spreading the slurry at the second rate ...

Подробнее
28-02-2019 дата публикации

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20190067059A1
Автор: HA Kyung Ho
Принадлежит:

A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer. 1. A semiconductor manufacturing apparatus , comprising:a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer;an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film; anda camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.2. The semiconductor manufacturing apparatus of claim 1 , further comprising an image processing unit configured to process the wafer image generated by the camera.3. The semiconductor manufacturing apparatus of claim 2 , wherein the wafer includes a plurality of semiconductor devices and a scribe region for separating the plurality of semiconductor devices claim 2 , andthe image processing unit is configured to determine whether a defect exists in the plurality of semiconductor devices from the wafer image.4. The semiconductor manufacturing apparatus of claim 3 , wherein the image processing unit is configured to receive map data regarding whether a defect exists in the plurality of semiconductor devices claim 3 , andupdate the map data according to whether a defect is formed in the plurality of ...

Подробнее
17-03-2016 дата публикации

FILM THICKNESS SIGNAL PROCESSING APPARATUS, POLISHING APPARATUS, FILM THICKNESS SIGNAL PROCESSING METHOD, AND POLISHING METHOD

Номер: US20160074987A1
Принадлежит:

The present invention improves the accuracy of film thickness detection. A film thickness signal processing apparatus is provided with a receiving unit for receiving film thickness data output from an eddy-current sensor for detecting the film thickness of a polishing object along a surface to be polished thereof; an identifying unit for identifying the effective range of the film thickness data on the basis of the film thickness data received by the receiving unit ; and a correcting unit for correcting the film thickness data within the effective range identified by the identifying unit 1. A film thickness signal processing apparatus comprising:a receiving unit for receiving film thickness data output from a film thickness sensor for detecting the film thickness of a polishing object along a surface to be polished thereof;an identifying unit for identifying an effective range of the film thickness data on the basis of the film thickness data received by the receiving unit; anda correcting unit for correcting the film thickness data within the effective range identified by the identifying unit.2. The film thickness signal processing apparatus according to claim 1 , further comprising a computing unit for determining edge parts of the effective range of the film thickness data on the basis of film thickness differences among the plurality of adjacent points of the film thickness data received by the receiving unit claim 1 , wherein the identifying unit identifies the effective range of the film thickness data on the basis of the edge parts determined by the computing unit.3. The film thickness signal processing apparatus according to claim 2 , wherein the computing unit generates edge-detecting waveforms by multiplying by thickness differences among a plurality of adjacent points of the film thickness data received by the receiving unit claim 2 , and the identifying unit identifies a range between two peaks appearing in the edge-detecting waveforms generated by the ...

Подробнее
17-03-2016 дата публикации

PROCESSING MODULE, PROCESSING APPARATUS, AND PROCESSING METHOD

Номер: US20160074988A1
Принадлежит:

PROBLEM 1. A treatment module for performing polishing treatment by , while bringing a pad smaller in diameter than a treatment target object into contact with the treatment target object , relatively moving the treatment target object and the pad , the treatment module comprising:a state detecting section configured to detect states of a surface of the treatment target object before the polishing treatment or during the polishing treatment; anda control section configured to control conditions of the polishing treatment in a portion of the polishing treatment surface of the treatment target object according to the states of the surface detected by the state detecting section.2. The treatment module according to claim 1 , whereinthe state detecting section is configured to detect a distribution of a film thickness of the surface of the treatment target object or a signal corresponding to the film thickness, andthe control section is configured to control the conditions of the polishing treatment in the portion of the surface of the treatment target object according to the distribution of the film thickness of the surface of the treatment target object or the signal corresponding to the film thickness detected by the state detecting section.3. The treatment module according to claim 2 , whereinthe state detecting section includes a film-thickness measuring device configured to detect a distribution of a film thickness of the surface of the treatment target object or a signal corresponding to the film thickness before the polishing treatment, andthe control section differentiates the conditions of the polishing treatment in the portion of surface of the treatment target object from conditions of the polishing treatment in other portions according to the distribution of the film thickness or the signal corresponding to the film thickness detected by the film-thickness measuring device.4. The treatment module according to claim 2 , whereinthe state detecting section ...

Подробнее
17-03-2016 дата публикации

POLISHING APPARATUS AND POLISHING METHOD

Номер: US20160074989A1
Принадлежит:

A polishing apparatus capable of eliminating a variation in film thickness along a circumferential direction of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head. 1. A polishing apparatus for polishing a substrate by bringing the substrate into sliding contact with a polishing surface , comprising:a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface;a rotating mechanism configured to rotate the polishing head about its own axis;a rotation angle detector configured to detect a rotation angle of the polishing head; anda polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head.2. The polishing apparatus according to claim 1 , wherein the polishing controller is configured to obtain an initial angle of the substrate indicating an orientation of the substrate with respect to a circumferential direction of the substrate before the substrate is held by the polishing head claim 1 , and obtain an initial rotation angle of the polishing head before holding the substrate.3. The polishing apparatus according to claim 2 , wherein the polishing controller is configured to obtain the initial angle of the substrate from ...

Подробнее
17-03-2016 дата публикации

Wafer polishing apparatus

Номер: US20160074990A1
Автор: Kee Yun Han
Принадлежит: LG Siltron Inc

A wafer polishing apparatus includes a lower surface plate, an upper surface plate disposed over the lower surface plate, a carrier disposed between the lower surface plate and the upper surface plate and containing a wafer, and a lift unit lifting the carrier such that an upper surface of the carrier contacts a lower surface of the upper surface plate or lowering the carrier such that a lower surface of the carrier contacts an upper surface of the lower surface plate.

Подробнее
15-03-2018 дата публикации

COUPLING MECHANISM, SUBSTRATE POLISHING APPARATUS, METHOD OF DETERMINING POSITION OF ROTATIONAL CENTER OF COUPLING MECHANISM, PROGRAM OF DETERMINING POSITION OF ROTATIONAL CENTER OF COUPLING MECHANISM, METHOD OF DETERMINING MAXIMUM PRESSING LOAD OF ROTATING BODY, AND PROGRAM OF DETERMINING MAXIMUM PRESSING LOAD OF ROTATING BODY

Номер: US20180071885A1
Автор: SHINOZAKI Hiroyuki
Принадлежит:

A coupling mechanism which enables a rotating body to follow an undulation of a polishing surface without generating flutter or vibration of the rotating body, and can finely control a load on the rotating body on a polishing surface in a load range which is smaller than the gravity of rotating body is disclosed. The coupling mechanism includes an upper spherical bearing and a lower spherical bearing disposed between a drive shaft and the rotating body. The upper spherical bearing has a first concave contact surface and a second convex contact surface which are in contact with each other, and the lower spherical bearing has a third concave contact surface and a fourth convex contact surface which are in contact with each other. The first concave contact surface and the second convex contact surface are located above the third concave contact surface and the fourth convex contact surface. The first concave contact surface, the second convex contact surface, the third concave contact surface, the fourth convex contact surface are arranged concentrically. 1. A coupling mechanism for tiltably coupling a rotating body to a drive shaft , comprising:a damping member disposed between the drive shaft and the rotating body,wherein the damping member is attached to both a lower end of the drive shaft and the rotating body, andthe damping member has a Young's modulus which is equal to or lower than a Young's modulus of the drive shaft, or has a damping coefficient which is higher than a damping coefficient of the drive shaft.2. The coupling mechanism according to claim 1 , wherein the damping member has the Young's modulus in a range of 0.1 GPa to 210 GPa claim 1 , or has the damping coefficient such that a damping ratio is in a range of 0.1 to 0.8.3. The coupling mechanism according to claim 1 , wherein the damping member is a rubber bush.4. The coupling mechanism according to claim 1 , wherein the damping member is a damping ring in an annular shape.5. A substrate polishing ...

Подробнее
16-03-2017 дата публикации

Surface grinding method for workpiece and surface grinder

Номер: US20170072529A1
Принадлежит: Koyo Machine Industries Co Ltd

[Problem] To enable efficiently grinding a workpiece of a hard brittle material, a difficult-to-cut material, or others at a moderate high load. [Solution Means] When surface-grinding a workpiece by a grinding wheel, a grinding load is monitored while the grinding wheel is reduced in cut-in speed when the grinding load rises and the cut-in speed is increased when the grinding load falls. Respective cut-in speeds with which the grinding wheel has a slower cut-in speed at a larger grinding load have been set in a manner corresponding to a plurality of respective load thresholds of the grinding load, and after starting grinding at a predetermined speed, the grinding wheel is decelerated or accelerated to a corresponding cut-in speed every time the grinding load rises or falls to a predetermined load threshold.

Подробнее
05-03-2020 дата публикации

CHEMICAL MECHANICAL PLANARIZATION SYSTEM AND A METHOD OF USING THE SAME

Номер: US20200070307A1
Автор: SU Jassie
Принадлежит:

The various described embodiments provide a CMP system and a method of using the same. The CMP system includes an imaging device, such as a laser scanner, that obtains an image of a dresser of the CMP system in real time or in-situ with a CMP process. A processing device of the CMP system compares the obtained image with one or more of reference images to determine whether or not the dresser has a defect. The processing device then adjusts the CMP process based on whether or not the dresser includes a defect. 1. A chemical mechanical planarization (CMP) system , comprising:a turn table;a polishing pad on the turn table;a carrier overlying the turn table, the carrier configured to hold a wafer;a slurry applicator overlying the turn table, the slurry applicator, in operation, dispenses a slurry on to the wafer;a dresser arm;a dresser coupled to the dresser arm, the dresser including an abrasive surface;an imaging device, which, in operation, captures an image of the abrasive surface; anda processing device, which, in operation, determines whether or not the dresser includes a defect based on the image of the abrasive surface.2. The system of wherein the processing device claim 1 , in operation claim 1 , obtains a reference dresser image.3. The system of wherein the reference dresser image is an image of another dresser that includes a defect.4. The system of wherein the reference dresser image is an image of another dresser that is non-defective.5. The system of wherein the processing device claim 2 , in operation claim 2 , compares the image of the abrasive surface to the reference dresser image claim 2 , and determines whether or not the dresser includes a defect based on differences between the image of the abrasive surface and the reference dresser image.6. The system of wherein the dresser is a diamond disk.7. The system of wherein the processing device claim 1 , in operation claim 1 , adjusts a CMP process in response to determining the dresser includes a defect ...

Подробнее
19-03-2015 дата публикации

POLISHING PAD WITH APERTURE

Номер: US20150079878A1
Принадлежит:

Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described. 1. A method of polishing a substrate , comprising:disposing a polishing pad above a platen of a chemical mechanical polishing apparatus, the polishing pad having a polishing surface, a back surface, and an aperture disposed in the polishing pad from the back surface through to the polishing surface, wherein the polishing surface comprising a pattern of grooves;dispensing a chemical mechanical polishing slurry on the polishing surface of the polishing pad;polishing a substrate with the chemical mechanical polishing slurry at the polishing surface of the polishing pad; andmonitoring, through the aperture, the polishing of the substrate with an optical monitoring device coupled with the platen.2. The method of claim 1 , wherein disposing the polishing pad above the platen comprises adhering the polishing pad to the platen with an adhesive sheet.3. The method of claim 2 , wherein adhering the polishing pad to the platen with the adhesive sheet serves to protect a quartz laser site of the optical monitoring device.4. The method of claim 1 , wherein polishing the substrate with the chemical mechanical polishing slurry comprises flushing the chemical mechanical polishing slurry from the aperture.5. The method of claim 1 , wherein polishing the substrate with the chemical mechanical polishing slurry comprises dispensing a slurry of sufficient transparency for monitoring the polishing of the substrate with the optical monitoring device.6. The method of claim 5 , wherein dispensing the slurry of sufficient transparency comprises dispensing a slurry having greater than approximately 80% transmission of a wavelength of light emitted from the optical monitoring device.7. The method of claim 5 , wherein dispensing the slurry of sufficient transparency comprises dispensing a slurry having less than approximately 1% of opaque components.8. A method of fabricating a ...

Подробнее
05-06-2014 дата публикации

COMMON GROUND FOR ELECTRONIC LAPPING GUIDES

Номер: US20140154951A1
Принадлежит: HGST NETHERLANDS B.V.

Embodiments described herein generally relate to connecting Electronic Lapping Guides (ELG) to a lapping controller such that the number of wire bonds from the controller to a row of read heads is minimized. When lapping the air bearing surface of the read heads, the electrical resistances of the ELGs are monitored to adjust the lapping process and set the stripe height for read sensors in the read heads. Once the resistance corresponds to the desired stripe height, the lapping process is stopped. To measure the resistance, each ELG may be electrically coupled to the same substrate—i.e., share the same common ground. The lapping controller applies a voltage potential across the ELGs using a wire bonded to a pad in the respective read head and one or more connections to the grounded substrate. This configuration avoids having to bond two wires onto each read head. 1. A device , comprising:a substrate; and a read sensor configured to detect magnetic orientation changes in a magnetic media,', 'an electronic lapping guide (ELG) configured to indicate, based on a resistance of the ELG, a stripe height of the read sensor, wherein the ELG is electrically coupled to the substrate, and', 'a first bonding pad electrically coupled to the ELG, wherein the first bonding pad, the ELG, and the substrate are part of a current path permitting current to flow through the ELG., 'a plurality of read heads disposed on the substrate, a first one of the plurality of read heads comprising2. The device of claim 1 , further comprising a second bonding pad electrically coupled to the substrate and part of the current path permitting current to flow through the ELG.3. The device of claim 2 , wherein the second bonding pad is disposed on a second read head of the plurality of read heads that is different from the first read head comprising the ELG.4. The device of claim 2 , wherein the second bonding pad is disposed on a portion of the substrate that does not include one of the plurality of ...

Подробнее
05-06-2014 дата публикации

Wafer grounding design for single pad lapping

Номер: US20140154952A1
Принадлежит: HGST NETHERLANDS BV

Embodiments described herein generally relate to connecting Electronic Lapping Guides (ELG) to a lapping controller to reduce resistance from current crowding while reducing connections to the ELG. A device and a system can include a wafer with peripheral grounding vias having a radius of at least 10 μm, a plurality of sliders with a magnetoresistive (MR) elements; a plurality of ELG electrically coupled to the lapping controller through a combination of the wafer and grounding pads and a bonding pad electrically coupled to the ELG. The ELG or the bonding pad can be positioned in the kerf or the device region of a row. If the ELG and the bonding pad are positioned in separate regions, a noble metal should be used to connect. Further, the number of grounding pads can be reduced by using grounding vias at specific intervals and specific sizes.

Подробнее
24-03-2022 дата публикации

INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, PROGRAM, AND SUBSTRATE PROCESSING APPARATUS

Номер: US20220093409A1
Принадлежит:

A system includes a first artificial intelligence unit that performs learning using a plurality of first learning datasets input values of which are sets of parameters different from each other in a combination of parameter types and output values of which are corresponding performance values of the substrate processing apparatus, and after the learning uses, as an input, each of a plurality of verification datasets including combinations of the parameter types that are same as the combinations of the parameter types at the time of learning, to predict a performance value; a selection unit that selects one set of parameter types from a plurality of sets of parameter types included in the plurality of verification datasets, by using at least one of a value indicating a percentage of correct answer of the predicted performance value, a time required for the learning, and a time required for predicting the performance value; and a second artificial intelligence unit that performs learning using a plurality of second learning datasets an input value of which is a set of past parameter values including the selected set of parameter types and an output value of which is a corresponding past performance value, and after the learning, predicts performance values of the target substrate processing apparatus obtained by changing variable parameters among the parameters including the selected set of parameter types with, as an input, a fixed parameter intrinsically determined for a target substrate processing apparatus among parameters including the selected set of parameter types, and outputs a combination of parameter values yielding a performance value, among the predicted performance values, satisfying an extraction criterion. 1. An information processing system that provides a combination of parameter values of a substrate processing apparatus , the system comprising:a first artificial intelligence unit that performs learning using a plurality of first learning datasets ...

Подробнее
14-03-2019 дата публикации

METHOD AND SYSTEM FOR MONITORING POLISHING PAD

Номер: US20190076982A1
Автор: SHI Chao
Принадлежит:

Method and system for monitoring a polishing pad is provided. The polishing pad includes a bottom layer, a polishing layer disposed on the bottom layer, and a plurality of mark structures disposed on the bottom layer and in the polishing layer to have a top surface coplanar with the polishing layer to indicate consumption level of the polishing layer. The monitoring system includes an acquisition module, a memory module, and a determining module connected to both the acquisition module and the memory module. The determining module, the acquisition module, and the memory module are configured to monitor the consumption level of the polishing layer and to recognize that the polishing pad needs to be replaced. 1. A method for monitoring a polishing pad , comprising:providing a polishing pad including a polishing layer disposed on a bottom layer, and a plurality of mark structures disposed on the bottom layer and in the polishing layer to have a top surface coplanar with the polishing layer to indicate consumption level of the polishing layer, wherein the plurality of mark structures are configured to include mark patterns, each mark structure includes a plurality of mark layers stacked one over another to form a stacked structure, and a size of each mark layer in each mark structure becomes smaller along a direction away from a surface of the bottom layer;acquiring label graphs of the plurality of label structures;comparing each mark pattern with a pre-stored critical pattern to obtain the consumption level of the polishing layer in a region adjacent to the mark structure corresponding to the mark pattern, wherein the critical pattern is the mark pattern of a corresponding mark structure when the polishing layer is worn out;recognizing that the polishing layer adjacent to a mark structure is worn out every time when the mark pattern is identical to the corresponding critical pattern, and also adding one into a counting number, wherein the counting number is used to ...

Подробнее
24-03-2016 дата публикации

WAFER SLIP DETECTION DURING CMP PROCESSING

Номер: US20160082566A1
Принадлежит:

A wafer-slip detection apparatus used in association with a chemical mechanical polishing (CMP) apparatus may include an imaging device that generates images corresponding to at least an area of a rotation table of the CMP apparatus, and an image processing unit coupled to the imaging device for receiving and processing the generated images during a CMP process. The image processing unit includes a reference image that is compared with each of the generated images for detecting a wafer presence within the at least an area of the rotation table, whereby the detected wafer presence is indicative of a wafer-slip event. 1. A wafer-slip detection apparatus used in association with a chemical mechanical polishing (CMP) apparatus , the wafer-slip detection apparatus comprising:an imaging device that generates images corresponding to at least an area of a rotation table of the CMP apparatus; andan image processing unit coupled to the imaging device for receiving and processing the generated images during a CMP process, the image processing unit including a reference image that is compared with each of the generated images for detecting a wafer presence within the at least an area of the rotation table,wherein the detected wafer presence is indicative of a wafer-slip event.2. The apparatus of claim 1 , wherein the imaging device comprises an infrared camera.3. The apparatus of claim 1 , wherein the generated images comprise grayscale images.4. The apparatus of claim 1 , wherein the image processing unit comprises:a memory unit that stores the reference image;a correlation unit coupled to the memory unit, the correlation unit correlating each of the received images with the stored reference image to generate a correlation factor;a determination unit coupled to the correlation unit, the determination unit comparing the correlation factor with a threshold correlation factor, wherein, based on the correlation factor falling below the threshold correlation factor, a wafer-slip ...

Подробнее
26-03-2015 дата публикации

ADAPTIVE UNIFORM POLISHING SYSTEM

Номер: US20150087205A1
Автор: Zhang John H.
Принадлежит: STMicroelectronics, Inc.

An adaptive uniform polishing system is equipped with feedback control to apply localized adjustments during a polishing operation. The adaptive uniform polishing system disclosed has particular application to the semiconductor industry. Such an adaptive uniform polishing system includes a rotatable head that holds a semiconductor wafer, and a processing unit structured to be placed in contact with an exposed surface of the wafer. The processing unit includes a rotatable macro-pad and a plurality of rotatable micro-pads that can polish different portions of the exposed surface at different rotation speeds and pressures. Thus, uniformity across the exposed surface can be enhanced by applying customized treatments to different areas. Customized treatments can include the use of different pad materials and geometries. Parameters of the adaptive uniform polishing system are programmable, based on in-situ data or data from other operations in a fabrication process, using advanced process control. 1. A system configured to uniformly planarize a semiconductor wafer , the system comprising:a head configured to hold the semiconductor wafer; and a macro-pad;', 'a plurality of micro-pads adjacent to one another, the micro-pads positioned to be placed in physical contact with different portions of the exposed surface of the semiconductor wafer, each micro-pad independently rotatable around a local axis; and', 'a plurality of drive units, each drive unit coupled to a respective micro-pad., 'a pad drive unit structured to retain a plurality of polishing pads, the pad drive unit including2. The system of wherein the head is rotatable around a head axis and the macro-pad is rotatable around a macro-pad axis.3. The system of wherein the head is operable to rotate in a rotation direction opposite that of the macro-pad.4. The system of wherein rotation of the macro-pad is in a direction opposite the rotation direction of one or more micro-pads.5. The system of wherein the micro-pads ...

Подробнее
12-06-2014 дата публикации

METHOD OF POLISHING ONE SIDE OF WAFER AND SINGLE SIDE POLISHING APPARATUS FOR WAFER

Номер: US20140162532A1
Автор: KAWASAKI Tomonori
Принадлежит: SUMCO CORPORATION

A method of polishing one side of a wafer, which makes it possible to accurately realize the desired wafer edge shape without dependence on the period of use of a polishing cloth, is provided. In the method according to the present invention, a wafer fixed to a head is brought into contact with a polishing cloth provided on a surface of a surface plate, and the head and the surface plate are rotated, thereby polishing one side of the wafer, the method including the steps of measuring a contact angle of the polishing cloth (S); determining a rotation speed of the head and the surface plate, based on the measured contact angle of the polishing cloth (S); and polishing the one side of the wafer by rotating the head and the surface plate at the determined rotation speed (S S). 1. A method of polishing one side of a wafer , in which a wafer fixed to a head is brought into contact with a polishing cloth provided on a surface of a surface plate , and the head and the surface plate are rotated thereby polishing one side of the wafer , comprising the steps of:measuring a contact angle of the polishing cloth;determining a rotation speed of the head and the surface plate, based on a predetermined relationship between the contact angle of a polishing cloth of the same kind as the polishing cloth and the rotation speed of the head and the surface plate for obtaining a certain wafer edge shape and on the measured contact angle of the polishing cloth; andpolishing the one side of the wafer by rotating the head and the surface plate at the determined rotation speed.2. The method of polishing one side of a wafer according to claim 1 , wherein with respect to each of a plurality of certain wafer edge shapes claim 1 , the relationship between the contact angle of a polishing cloth of the same kind as the polishing cloth and the rotation speed of the head and the surface plate is previously determined claim 1 , and the rotation speed of the head and the surface plate is determined with ...

Подробнее
12-03-2020 дата публикации

POLISHING APPARATUS

Номер: US20200078903A1
Автор: Miki Tsutomu, ONO Syunichi
Принадлежит: Toshiba Memory Corporation

A polishing apparatus includes a polisher that polishes a target object to be polished. A holder is rotatable while holding the target object to be polished. Multiple concentric elastic members around the center of a rotation shaft of the holder are provided on the holder and elastically press the target object to be polished against the polisher. Multiple sensors are provided in the elastic members and detect vibration from a polishing surface of the target object to be polished. The detected vibration allows the polishing apparatus to create an unevenness map of the polishing surface and correspondingly actuate the concentric elastic members to remove the unevenness, according to a control sequence set in advance, based on the detected vibration, in a polishing control program to control the concentric elastic members. 1. A polishing apparatus comprising:a polisher configured to polish a target object to be polished;a holder configured to rotate while holding the target object to be polished;a plurality of elastic members provided on the holder concentrically around a center of a rotation shaft of the holder and configured to elastically press the target object to be polished against the polisher; anda plurality of vibration sensors provided in the plurality of elastic members and configured to detect vibration from a polishing surface of the target object to be polished.2. The polishing apparatus according to claim 1 , wherein at least one of the plurality of elastic members has a hollow cavity and is configured to press the target object to be polished against the polisher by supplying gas to the cavity claim 1 , andat least one of the plurality of vibration sensors is provided in the cavity.3. The polishing apparatus according to claim 2 , wherein when the target object is polished when the vibration sensors come into contact with the target object to be polished through the elastic members.4. The polishing apparatus according to claim 3 , wherein the target ...

Подробнее
12-03-2020 дата публикации

METHODS FOR POLISHING SEMICONDUCTOR SUBSTRATES THAT ADJUST FOR PAD-TO-PAD VARIANCE

Номер: US20200083057A1
Принадлежит:

Methods for polishing semiconductor substrates that involve adjusting the finish polishing sequence based on the pad-to-pad variance of the polishing pad are disclosed. 1. A method for polishing semiconductor substrates , each substrate having a front surface and a back surface generally parallel to the front surface , the method comprising:contacting the front surface of a first semiconductor substrate with a polishing pad;supplying a polishing slurry to the polishing pad to polish the front surface of the first semiconductor substrate and produce a polished first semiconductor substrate;measuring the edge roll-off of the first semiconductor substrate;contacting the front surface of a second semiconductor substrate with the polishing pad;supplying a polishing slurry to the polishing pad to polish the front surface of the second semiconductor substrate; andcontrolling an amount of the polishing slurry supplied to the polishing pad while contacting the second semiconductor substrate with the polishing pad based on, at least in part, the measured edge roll-off of the first semiconductor substrate.2. The method as set forth in wherein the first semiconductor substrate is one of a batch of semiconductor substrates claim 1 , the method comprising:contacting the front surface of each semiconductor substrate of the batch of semiconductor substrates with the polishing pad;supplying a polishing slurry to the polishing pad to polish the front surface of each of the semiconductor substrates of the batch to produce a batch of polished semiconductor substrates;measuring the edge roll-off of each of the polished semiconductor substrates of the batch; andcontrolling the amount of the polishing slurry supplied to the polishing pad while contacting the second semiconductor substrate with the polishing pad based on, at least in part, the measured edge roll-off of the batch of polished semiconductor substrates.3. The method as set forth in wherein the measured edge roll-off of each of ...

Подробнее
05-05-2022 дата публикации

Wafer grinding method

Номер: US20220134504A1
Принадлежит: Disco Corp

A wafer grinding method includes a step of holding a wafer on a holding surface of a chuck table, a first grinding step of controlling a grinding feeding mechanism by a control unit so as to increase or decrease a load value measured by a load measuring unit and grinding the wafer to a thickness not reaching a predetermined finished thickness of the wafer, and a second grinding step of imparting a preset load value and grinding the wafer until the predetermined finished thickness is reached, after the first grinding step.

Подробнее
19-03-2020 дата публикации

METHODS FOR A WEB-BASED CMP SYSTEM

Номер: US20200086456A1
Принадлежит:

Embodiments of the present disclosure generally provide methods, polishing systems with computer readable medium having the methods stored thereon, to facilitate consistent tensioning of a polishing article disposed on a web-based polishing system. In one embodiment, a substrate processing method includes winding a used portion of a polishing article onto a take-up roll of a polishing system by rotating a first spindle having the take-up roll disposed thereon; measuring, using an encoder wheel, a polishing article advancement length of the used portion of the polishing article wound onto the take-up roll; determining a tensioning torque to apply to a supply roll using the measured polishing article advancement length; and tensioning the polishing article by applying the tensioning torque to the supply roll. 1. A substrate processing method , comprising:winding a used portion of a polishing article onto a take-up roll of a polishing system by rotating a first spindle having the take-up roll disposed thereon;measuring, using an encoder wheel, a polishing article advancement length of the used portion of the polishing article wound onto the take-up roll;determining a tensioning torque to apply to a supply roll using the polishing article advancement length measurement; andtensioning the polishing article by applying the tensioning torque to the supply roll.2. The method of claim 1 , wherein the polishing system comprises:a take-up roll assembly comprising a first spindle, the take-up roll disposed on the first spindle, a first actuator coupled to the first spindle, and the encoder wheel; anda supply roll assembly comprising a second spindle, the supply roll disposed on the second spindle, and a second actuator coupled to the second spindle,wherein the polishing article extends between the take-up roll and the supply roll in a machine direction, andwherein the polishing article advancement length is measured in the machine direction.3. The method of claim 2 , wherein ...

Подробнее
07-04-2016 дата публикации

ADJUSTING A SUBSTRATE POLISHING CONDITION

Номер: US20160096250A1
Принадлежит:

A polishing apparatus polishes a substrate by moving the substrate and a polishing pad relative to each other. The apparatus includes: an elastic modulus measuring device configured to measure an elastic modulus of the polishing pad, and a polishing condition adjustor configured to adjust polishing conditions of the substrate based on a measured value of the elastic modulus. The polishing conditions include pressure of a retaining ring, arranged around the substrate, exerted on the polishing pad and a temperature of the polishing pad. 1. A method for adjusting a polishing condition , said method comprising:providing a polishing pad to polish a substrate, a top ring to hold the substrate, and a temperature adjusting mechanism to control a temperature of the polishing pad;measuring an elastic modulus of the polishing pad; andadjusting the temperature of the polishing pad based on a relationship between a measured value of the elastic modulus of the polishing pad and a size of surface of the substrate.2. The method for adjusting the polishing condition according to claim 1 , wherein the relationship is determined in advance by:preparing a plurality of the polishing pads which have different elastic moduli,selecting one of the polishing pads,measuring a size of surface steps of the sample substrate,repeating selecting of one of the polishing pads, polishing of a sample substrate on the selected one of the polishing pads, and measuring of the size of the surface steps of the sample substrate, anddetermining an optimum elastic modulus of each of the polishing pads at which the size of the surface steps is minimized.3. The method for adjusting the polishing condition according to claim 1 , wherein the temperature of the polishing pad is regulated such that the elastic modulus becomes equal to a predetermined target value.4. The method for adjusting the polishing condition according to claim 1 , wherein the temperature of the polishing pad is regulated by bringing a ...

Подробнее
07-04-2016 дата публикации

Selection of Polishing Parameters to Generate Removal or Pressure Profile

Номер: US20160096251A1
Принадлежит: Applied Materials, Inc.

Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored. 1. A method of selecting values for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head including a plurality of controllable chambers to apply controllable chamber pressures to a plurality of corresponding zones on a substrate , comprising:for each controllable parameter of the plurality of controllable parameters, storing data relating variation in removal profile on a front surface of the substrate to variation in the controllable parameter, wherein the plurality of controllable parameters include a chamber pressure for each chamber of the plurality of chambers, wherein the data for each chamber pressure includes removal at a plurality of positions on the front surface of the substrate inside a zone corresponding to the chamber, and wherein the data for at least one controllable parameter of the plurality of controllable parameters includes removal at multiple positions inside each of at least two zones corresponding to at least two chambers of the plurality of chambers;determining a value for each parameter of the plurality ...

Подробнее
05-04-2018 дата публикации

Polishing apparatus and polishing method

Номер: US20180093360A1
Принадлежит: Ebara Corp

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing pad 10 and a semiconductor wafer 16 disposed opposed to the polishing pad 10 includes a polishing table 30 A for holding the polishing pad 10 and a top ring 31 A for holding the semiconductor wafer 16 . A swing shaft motor 14 swings a swing arm 110 for holding the top ring 31 A. The arm torque detection section 26 detects arm torque applied to the swing arm 110 . An end point detection section 28 detects a polishing end point indicating an end of polishing based on the detected arm torque.

Подробнее
12-05-2022 дата публикации

POLISHING HEAD WITH LOCAL WAFER PRESSURE

Номер: US20220143779A1
Принадлежит:

A polishing system includes a carriage arm having an actuator disposed on a lower surface thereof. The actuator includes a piston and a roller coupled to a distal end of the piston. The polishing system includes a polishing pad and a substrate carrier suspended from the carriage arm and configured to apply a pressure between a substrate and the polishing pad. The substrate carrier includes a housing, a retaining ring, and a membrane. The substrate carrier includes an upper load ring disposed in the housing. The roller of the actuator is configured to contact the upper load ring during relative rotation between the substrate carrier and the carriage arm. The actuator is configured to apply a load to a portion of the upper load ring thereby altering the pressure applied between the substrate and the polishing pad. 1. A substrate carrier configured to be attached to a polishing system for polishing a substrate , the substrate carrier comprising:a housing;a retaining ring coupled to the housing; a bottom portion configured to contact the substrate;', 'an upper portion opposite the bottom portion; and', 'a side portion extending orthogonally between the bottom portion and the upper portion, wherein an outer edge region connects the side portion to the bottom portion; and, 'a membrane assembly disposed within the housing and spanning an inner diameter of the retaining ring, the membrane assembly havingan actuator configured to apply a load to the membrane assembly thereby altering a pressure applied between the substrate disposed in the substrate carrier and a polishing pad.2. The substrate carrier of claim 1 , wherein:the side portion includes an annular recess formed along an outer edge of the side portion;an annular sleeve is disposed in the annular recess; andthe load applied to the membrane assembly is applied to the outer edge region of the membrane via the annular sleeve.3. The substrate carrier of claim 2 , wherein the actuator comprises a piston that engages the ...

Подробнее
28-03-2019 дата публикации

CHEMICAL MECHANICAL POLISHING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Номер: US20190091833A1
Принадлежит: EHWA DIAMOND IND. CO., LTD.

A chemical mechanical polishing method includes providing a pad conditioner, such that the pad conditioner includes a base and a plurality of tips protruding from a surface of the base, adjusting a surface roughness of an upper surface of each tip of the plurality of tips, and adjusting a polishing rate of chemical mechanical polishing using the adjusted surface roughness of the upper surfaces of the plurality of tips. 1. A chemical mechanical polishing method , the method comprising:providing a pad conditioner, such that the pad conditioner includes a base and a plurality of tips protruding from a surface of the base;adjusting a surface roughness of an upper surface of each tip of the plurality of tips; andadjusting a polishing rate of chemical mechanical polishing using the adjusted surface roughness of the upper surfaces of the plurality of tips.2. The chemical mechanical polishing method as claimed in claim 1 , wherein adjusting the polishing rate of chemical mechanical polishing includes:adjusting a surface roughness of a polishing pad using the adjusted surface roughness of the upper surfaces of the plurality of tips of the pad conditioner; andusing the adjusted surface roughness of the polishing pad to perform chemical mechanical polishing on a surface of a wafer.3. The chemical mechanical polishing method as claimed in claim 1 , wherein each tip of the plurality of tips includes:a protrusion protruding from the surface of the base; anda cutting portion covering an upper surface of the base, a sidewall of the protrusion, and an upper surface of the protrusion.4. The chemical mechanical polishing method as claimed in claim 3 , wherein the cutting portion includes chemical vapor deposition (CVD) diamond.5. The chemical mechanical polishing method as claimed in claim 1 , wherein providing the pad conditioner and adjusting the surface roughness of the upper surface of each tip of the plurality of tips are performed simultaneously.6. The chemical mechanical ...

Подробнее
12-05-2022 дата публикации

POLISHING SEMICONDUCTOR WAFERS USING CAUSAL MODELS

Номер: US20220146991A1
Принадлежит:

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for optimizing a process of polishing semiconductor wafers. In one aspect, the method comprises repeatedly performing the following: i) selecting a configuration of input settings for polishing a semiconductor wafer, based on a causal model that measures current causal relationships between input settings and a quality of semiconductor wafers; ii) receiving a measure of the quality of the semiconductor wafer polished with the configuration of input settings; and iii) adjusting, based on the measure of the quality of the semiconductor wafer polished with the configuration of input settings, the causal model. 1. A method comprising: selecting a configuration of input settings for polishing a semiconductor wafer, based on a causal model that measures current causal relationships between input settings and a quality of semiconductor wafers;', 'receiving a measure of the quality of the semiconductor wafer polished with the configuration of input settings; and', 'adjusting, based on the measure of the quality of the semiconductor wafer polished with the configuration of input settings, the causal model., 'repeatedly performing the following2. The method of claim 1 , wherein:selecting a configuration of input settings comprises selecting the configuration of input settings based on the causal model and a set of internal control parameters, andthe method further comprises adjusting the internal control parameters based on the measure of the quality of the semiconductor wafer polished with the configuration of input settings.3. The method of claim 1 , wherein the measure of quality of the semiconductor wafer comprises one or more of:one or more measures related to removing material from the semiconductor wafer;a final flatness of the semiconductor wafer;a planarization efficiency of the semiconductor wafer;a uniformity of features of the semiconductor wafer;a measure of ...

Подробнее
14-04-2016 дата публикации

Multi-Platen Multi-Head Polishing Architecture

Номер: US20160101497A1
Принадлежит: Applied Materials, Inc.

A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station. 117-. (canceled)18. A method of operating a polishing apparatus , comprising:transporting a first substrate from a transfer station past a first polishing station to a second polishing station without polishing the first substrate at the first polishing station;transporting a second substrate from the transfer station to the first polishing station;polishing the first substrate at the second polishing station and simultaneously polishing the second substrate at the first polishing station;transporting the first substrate from the second polishing station past a third polishing station to a fourth polishing station without polishing the first substrate at the third polishing station;transporting the second substrate from the first polishing station past the second polishing station to the third polishing station without polishing the second at the second polishing station; andpolishing the first substrate at the fourth polishing station and simultaneously polishing the second substrate at the third polishing station.19. The method of claim 18 , further comprising transporting the first substrate from the fourth polishing station to the transfer station claim 18 , and transporting the second substrate from the third polishing station past the fourth polishing station to the transfer station without polishing the second substrate at the fourth polishing station.20. The method of claim 18 ...

Подробнее
28-03-2019 дата публикации

Semiconductor fabrication using machine learning approach to generating process control parameters

Номер: US20190095797A1
Принадлежит: Individual

A method for processing substrates includes subjecting each respective first substrate of a first plurality of substrates to a process that modifies a thickness of an outer layer of the respective first substrate, generating a plurality of groups of process parameter values; generating a plurality of removal profiles, training an artificial neural network by backpropagation using the plurality of groups of process parameter and plurality of removal profiles as training data where the artificial neural network has a plurality of input nodes to receive respective removal values from the removal profile and a plurality of output nodes to output control parameter values, for each respective second substrate of a second plurality of substrates determining a target removal profile, determining respective control parameter values to apply by applying the target removal profile to the input nodes, and subjecting each respective second substrate to the process using the respective control parameter values.

Подробнее
28-03-2019 дата публикации

Semiconductor fabrication using process control parameter matrix

Номер: US20190096722A1
Принадлежит: Individual

A method of processing substrates includes: subjecting each respective first substrate of a first plurality of substrates to a process that modifies a thickness of an outer layer of the respective first substrate; generating a plurality of groups of process parameter values, wherein the plurality of process parameters comprise a plurality of control parameters and a plurality of state parameters; generating a plurality of measured removal profiles; generating a matrix that relates the plurality of process parameters to a calculated removal profile; for each respective second substrate of a second plurality of substrates, determining a target removal profile and a plurality of state parameter values; calculating respective control parameter values to apply to the respective second substrate by applying the target removal profile and the state parameter values to the matrix; and subjecting each respective second substrate to the process using the respective process parameter values.

Подробнее
26-03-2020 дата публикации

ZONE-BASED CMP TARGET CONTROL

Номер: US20200094369A1
Принадлежит:

The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones. 1. A method of performing chemical mechanical polishing (CMP) on a wafer , comprising:identifying a first zone and a second zone on a surface of the wafer, the first zone having a structure feature different from a structure feature of the second zone;achieving a first CMP target thickness on the first zone by polishing the wafer using a first CMP process that is selective to the structure feature of the second zone; andachieving the first CMP target thickness on the second zone by polishing the wafer using a second CMP process.2. The method of claim 1 , wherein the first CMP process is selective to a structure feature in the second zone.3. The method of claim 1 , wherein the second CMP process is selective to a structure feature in the first zone.4. The method of claim 1 , further comprising achieving a second CMP target thickness on the first zone and the second zone together by polishing the wafer using a third CMP process.5. The method of claim 4 , wherein the polishing the wafer using the third CMP process is one or more of having a lower polishing rate than the first CMP process and the second CMP process or a buffing polishing.6. The method of claim 1 , wherein the polishing the wafer using the first CMP process includes applying a higher pushing pressure toward a wafer backside of the first zone than toward a wafer backside of the second zone.7. The method of claim 1 , wherein the first zone and the second zone are substantially concentric among one another.8. The method of claim 1 , before the polishing the wafer using the second CMP process claim 1 , further comprising:removing a first ...

Подробнее
26-03-2020 дата публикации

Machine vision as input to a cmp process control algorithm

Номер: US20200094370A1
Принадлежит: Applied Materials Inc

During chemical mechanical polishing of a substrate, a signal value that depends on a thickness of a layer in a measurement spot on a substrate undergoing polishing is determined by a first in-situ monitoring system. An image of at least the measurement spot of the substrate is generated by a second in-situ imaging system. Machine vision processing, e.g., a convolutional neural network, is used to determine a characterizing value for the measurement spot based on the image. Then a measurement value is calculated based on both the characterizing value and the signal value.

Подробнее
12-04-2018 дата публикации

GRINDING APPARATUS AND WAFER PROCESSING METHOD

Номер: US20180099373A1
Автор: SEKIYA Kazuma
Принадлежит:

A grinding apparatus includes a chuck table for holding a wafer having a modified layer near the front side or a groove on the front side, the groove having a depth not less than a finished thickness of the wafer, a grinding unit for grinding the back side of the wafer to divide the wafer into a plurality of chips, a die strength measuring unit for measuring the die strength of any one of the chips, and a control unit for controlling each component according to a measured value of die strength. The control unit determines that grinding is not to be performed on the remaining wafers stored in the cassette when the measured value is less than a threshold value, and determines that grinding is to be performed on the remaining wafers when the measured value is greater than or equal to the threshold value. 1. A grinding apparatus comprising:a chuck table for holding the front side of a wafer having a modified layer near the front side or a groove on the front side, said groove having a depth not less than a finished thickness of said wafer;a grinding unit for grinding the back side of said wafer held on said chuck table to thereby divide said wafer into a plurality of chips along said modified layer or said groove;a cassette mounting area for mounting a cassette storing a plurality of wafers including said wafer;a loading unit for loading said wafer from said cassette mounted on said cassette mounting area to said chuck table;a die strength measuring unit for measuring the die strength of any one of said chips obtained by dividing said wafer in said grinding unit; anda control unit for controlling each component according to a measured value for the die strength measured by said die strength measuring unit;said control unit having a determining section for determining that grinding is not to be performed to the remaining wafers stored in said cassette when said measured value is less than a threshold value, whereas determining that grinding is to be performed to the ...

Подробнее
08-04-2021 дата публикации

APPARATUS AND METHOD FOR DETERMINING PARAMETERS OF PROCESS OPERATION

Номер: US20210101249A1
Автор: Chen Anthony
Принадлежит:

Various examples of the present technology disclose a self-contained and programmable Processing Probe Apparatus (PPA) that can measure processing properties of a processing tool. The PPA comprises one or more sensors, an analog-to-digital converter and information (ADCI) processor, an electrical power source (EPS), and a digital signal communication device, all of which are attached to a flexible film. The flexible film can be mounted on a substrate that mimics a semiconductor workpiece. 1. A computer-implemented method for determining processing parameters of a processing tool , comprising:loading a processing probe apparatus (PPA) into the processing tool, the PPA comprising a substrate and an active layer, the active layer comprising a processor, a plurality of sensors, a power source, a communication device, an interconnect and a shield layer, the shield layer being operable to prevent electromagnetic (EM) radiations within the processing tool from interfering measurements and signal processing performed by components of the active layer;running a processing recipe on the processing tool;causing the PPA to measure processing parameters of the processing tool while the processing recipe is being run;receiving measured processing data from the PPA; andanalyzing the measure processing data to determine the processing parameters.2. The computer-implemented method of claim 1 , wherein the plurality of sensors are resistance thermal detectors (RTDs) claim 1 , thermocouples claim 1 , or optical sensors.3. The computer-implemented method of claim 2 , wherein the PPA further comprises one or more placement sensors claim 2 , the one or more placement sensors configured to detect a relative position between the PPA and an electrostatic chuck (ESC) of the processing tool.4. The computer-implemented method of claim 3 , wherein the one or more placement sensors are configured to sense an onset of electrostatic clamping and provide a time reference to start temperature ...

Подробнее
02-06-2022 дата публикации

POLISHING RECIPE DETERMINATION DEVICE

Номер: US20220168864A1
Принадлежит:

An information processing apparatus is an information processing apparatus that determines a polishing recipe based on area response data acquired by changing a pressure for each area in a polishing head, the apparatus including an irregularity-presence-or-absence estimation unit that estimates and outputs whether an irregularity is present using new area response data as an input, a screening unit estimates and outputs, when the irregularity-presence-or-absence estimation unit estimates that an irregularity is present, area response data after the removal of the irregularity using area response data estimated that an irregularity is present as an input, and a simulation unit that determines a polishing recipe by simulation based on area response data estimated by the irregularity-presence-or-absence estimation unit that no irregularity is present or a response for each area after the removal of the irregularity estimated by the screening unit. 1. A polishing recipe determination device determining a polishing recipe based on area response data acquired by changing a pressure for each area in a top ring , the device comprising:an irregularity-presence-or-absence estimation unit having a first learned model machine-learning relationship between past area response data and whether an irregularity is present in the past area response data, the irregularity-presence-or-absence estimation unit being configured to estimate and output presence or absence of an irregularity using new area response data as an input;a screening unit having a second learned model machine-learning relationship between the past area response data with an irregularity and area response data after removal of an irregularity, the screening unit being configured to, when the irregularity-presence-or-absence estimation unit estimates that an irregularity is present, estimate area response data after the removal of the irregularity using an input of area response data estimated that an irregularity is ...

Подробнее
02-06-2022 дата публикации

TEXTURED GLASS-BASED ARTICLES WITH MULTIPLE HAZE LEVELS AND PROCESSES OF PRODUCING THE SAME

Номер: US20220169563A1
Принадлежит:

A textured glass-based article with multiple haze levels is provided. The textured glass-based articles are produced by utilizing a combination of etching and mechanical polishing to produce the multiple haze levels. 1. A method , comprising:{'sub': 1', 'a1', '1, 'texturing a surface of a glass-based substrate to produce a textured glass-based substrate having a first thickness t, a first surface roughness R, and a first haze H; and'}{'sub': 2', 'a2', '2, 'polishing a region of the surface of the textured glass-based substrate to produce a glass-based article with a surface comprising a polished region with a second thickness t, a second surface roughness R, and a second haze H,'}{'sub': a1', 'a2', '1', '2', '1', '2', '1', 'a1', '1, 'wherein R>R, H>H, t>t, and the glass-based article comprises a region having t, R, and H.'}2. The method of claim 1 , wherein the texturing removes from greater than or equal to 5 μm to less than or equal to 50 μm from the surface of the glass-based substrate.3. The method of claim 1 , wherein the texturing comprises etching the surface of the glass-based substrate with an etchant.4. The method of claim 1 , wherein the texturing comprises mechanically lapping the surface of the glass-based substrate.5. The method of claim 1 , wherein t−t≤2 μm.6. The method of claim 1 , wherein:{'sub': 'a1', 'Ris greater than or equal to 300 nm,'}{'sub': '1', 'His greater than or equal to 30% to less than or equal to 100%,'}{'sub': 'a2', 'Ris greater than or equal to 0.2 nm to less than or equal to 10 nm, and'}{'sub': '2', 'His less than or equal to 0.2%.'}7. The method of claim 1 , further comprising:{'sub': 3', 'a3', '3, 'polishing an additional region of the surface of the textured glass-based substrate to produce a glass-based article comprising an additional region with a third thickness t, a third surface roughness R, and a third haze H,'}{'sub': a1', 'a', 'a2', '1', '3', '2', '1', '3', '2, 'wherein R>R3>R, H>H>H, and t>t>t.'}8. A glass-based ...

Подробнее
23-04-2015 дата публикации

CMP HEAD STRUCTURE

Номер: US20150111469A1
Принадлежит: GLOBALFOUNDRIES Singapore Pte. Ltd.

A CMP structure for CMP processing and a method of making a device using the same are presented. The apparatus comprises a polishing pad on a platen table, a head assembly for holding a wafer against the polishing pad, wherein the head assembly includes a retaining ring, a sensor for sensing the depth of grooves on the retaining ring and a controller for determining an update pressure to apply to the retaining ring based on the depth of the grooves and applying the updated pressure to the retaining ring during processing. 1. A CMP apparatus for prolonging the use of a retaining ring comprising:a polishing pad on a platen table;a head assembly for holding a wafer against the polishing pad, wherein the head assembly includes the retaining ring;a sensor for sensing the depth of grooves on the retaining ring; anda controller for determining an update pressure to apply to the retaining ring based on the depth of the grooves and applying the updated pressure to the retaining ring during processing.2. The apparatus of wherein the controller comprises a process controller for monitoring the groove depth and controlling the pressure exerted by the retaining ring.3. The apparatus of claim 1 , wherein the process controller receives the measurement of the groove depths from the sensor in the form of a digital signal.4. The apparatus of wherein the process controller will calculate a recommended ring pressure based on groove depth data received from the sensor and send the recommended ring pressure data to an upper pneumatic-assembly (UPA).5. The apparatus of wherein the UPA will supply the recommended ring pressure data to a head assembly.6. The apparatus of wherein the head assembly will apply the recommended ring pressure to the retaining ring during processing.7. The apparatus of wherein the recommended ring pressure applied by the head assembly to the retaining ring will become less as the retaining ring ages.8. The apparatus of wherein the process controller will ...

Подробнее