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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 5466. Отображено 100.
23-02-2012 дата публикации

Methods Of Forming Patterns, And Methods Of Forming Integrated Circuits

Номер: US20120045891A1
Автор: Dan Millward, Scott Sills
Принадлежит: Micron Technology Inc

Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

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Номер записи: 1
22-03-2012 дата публикации

Substrate bonding with metal germanium silicon material

Номер: US20120068325A1
Автор: Alex P. Pamatat, Ruben B. Montez
Принадлежит: FREESCALE SEMICONDUCTOR INC

In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.

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Номер записи: 2
17-05-2012 дата публикации

Mounting flexure contacts

Номер: US20120120507A1
Автор: Ankur Jain, Roman C. Gutierrez
Принадлежит: Tessera MEMS Technologies Inc

A device may comprise a flexure formed of a first semiconductor material. A first trench may be formed in the flexure. The first trench may separate the first semiconductor material into a first portion and a second portion thereof. An oxide layer may be formed in the first trench. The oxide layer may extend over a top portion of the first semiconductor material. A second semiconductor material may be formed on the oxide layer. The first trench and the oxide layer may cooperate to electrically isolate the first portion and the second portion from one another.

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Номер записи: 3
24-05-2012 дата публикации

Systems and methods for a four-layer chip-scale mems device

Номер: US20120126348A1
Автор: Robert D. Horning
Принадлежит: Honeywell International Inc

Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer.

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Номер записи: 4
07-06-2012 дата публикации

Wafer Level Structures and Methods for Fabricating and Packaging MEMS

Номер: US20120142144A1
Автор: Babak Taheri
Принадлежит: Babak Taheri

Methods of fabricating a Micro-Electromechanical System (MEMS) in a hermetically sealed cavity formed at a substrate level are provided. Generally, the method comprises: (i) forming a number of first open cavities in a surface of a first substrate and a number of second open cavities in a surface of a second substrate corresponding to the first open cavities; (ii) forming an actuator/sensor layer including a number of MEMS devices with electrically conductive regions therein; (iii) bonding the first substrate and the second substrate to the actuator/sensor layer so that at least one of the number of the first and second open cavities align with at least one of the number of MEMS devices to form a sealed cavity around the MEMS; and (iv) electrically connecting the electrically conductive regions of the MEMS device to a pad outside of the sealed cavity through an electrical interconnect. Other embodiments are also described.

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Номер записи: 5
14-06-2012 дата публикации

Method to prevent metal pad damage in wafer level package

Номер: US20120149152A1
Автор: Hsin-Ting HUANG, Hung-Hua Lin, Jung-Huei Peng, Ming-Tung Wu, Ping-Yin Liu, Shang-Ying Tsai, Yao-Te Huang, Yuan-Chih Hsieh
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.

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Номер записи: 6
21-06-2012 дата публикации

Forming nanometer-sized patterns by electron microscopy

Номер: US20120152902A1
Автор: Andrew P. Homyk, Axel Scherer, Sameer WALAVALKAR
Принадлежит: California Institute of Technology CalTech

A method for forming nanometer-sized patterns and pores in a membrane is described. The method comprises incorporating a reactive material onto the membrane, the reactive material being a material capable of lowering an amount of energy required for forming a pore and/or pattern by irradiating the membrane material with an electron beam, thus leading to a faster pore and/or pattern formation.

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Номер записи: 7
19-07-2012 дата публикации

Method for mems device fabrication and device formed

Номер: US20120181638A1
Автор: Joseph Damian Gordon Lacey, Mickael Renault, Thomas L. Maguire, Vikram Joshi
Принадлежит: Cavendish Kinetics Inc

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

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Номер записи: 8
16-08-2012 дата публикации

Micro-electromechanical system devices and methods of making micro-electromechanical system devices

Номер: US20120205753A1
Автор: Andrew J. Minnick, Charles W. Blackmer, Kenneth D. Brennan, Mollie K. Devoe, Scott G. Adams
Принадлежит: Kionix Inc

A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first, second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.

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Номер записи: 9
16-08-2012 дата публикации

MEMS and Protection Structure Thereof

Номер: US20120205808A1
Автор: Bang-Chiang Lan, Chao-An Su, Chien-Hsin Huang, Hui-Min Wu, Li-Che Chen, Meng-Jia Lin, Min Chen, Ming-I Wang, Tzung-Han Tan, Tzung-I Su
Принадлежит: United Microelectronics Corp

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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Номер записи: 10
06-09-2012 дата публикации

Mems-microphone

Номер: US20120224726A1
Автор: Andreas Beer, Anton Leidl, Matthias Jungkunz, Wolfgang Pahl
Принадлежит: EPCOS AG

A MEMS microphone having an improved noise performance due to reduced DC leakage current is provided. For that, a minimum distance between a signal line of the MEMS microphone and other conducting structures is maintained. Further, a DC guard structure fencing at least a section of the signal line is provided.

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Номер записи: 11
15-11-2012 дата публикации

Processes and mounting fixtures for fabricating electromechanical devices and devices formed therewith

Номер: US20120286380A1
Автор: Navid Yazdi, Weibin Zhu, Yafan Zhang
Принадлежит: EVIGIA SYSTEMS

Processes and fixtures for producing electromechanical devices, and particularly three-dimensional electromechanical devices such as inertial measurement units (IMUs), through the use of a fabrication process and a three-dimensional assembly process that entail joining single-axis device-IC chips while positioned within a mounting fixture that maintains the orientations and relative positions of the chips during the joining operation.

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Номер записи: 12
22-11-2012 дата публикации

Nonvolatile nano-electromechanical system device

Номер: US20120293236A1
Автор: David J. Frank, Guy Cohen
Принадлежит: International Business Machines Corp

A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

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Номер записи: 13
13-12-2012 дата публикации

Semiconductor apparatus

Номер: US20120313246A1
Автор: Ching-Hou SU, Chyi-Tsong Ni, Ting-Ying CHIEN, Yi Hsun CHIU
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge layer adjacent to the first silicon substrate, a Cu layer adjacent to the second silicon substrate, and a metallic alloy between the Ge layer and Cu layer.

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Номер записи: 14
31-01-2013 дата публикации

Monolithic Silicon Microphone

Номер: US20130028459A1
Автор: Yunlong Wang
Принадлежит: Individual

A monolithic silicon microphone including a first backplate, a second backplate and a diaphragm displaced between said first backplate and said second backplate. Said first backplate is supported by a silicon substrate with one or more perforation holes. Said second substrate is attached to a perforated plate which itself is supported on said substrate. Said monolithic silicon microphone has integrated signal conditioning circuit, and is said diaphragm, said first backplate, said second backplate, and said signal conditioning circuit are electrically interconnected. Signals from said diaphragm, said first backplate, and said second backplate are fed into said signal conditioning circuit, and are amplified differentially.

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Номер записи: 15
07-02-2013 дата публикации

Metal thin shield on electrical device

Номер: US20130032385A1
Автор: Mario Francisco Velez, Peng Cheng Lin
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides systems and methods for forming a metal thin film shield over a thin film cap to protect electromechanical systems devices in a cavity beneath. In one aspect, a dual or multi layer thin film structure is used to seal a electromechanical device. For example, a metal thin film shield can be mated over an oxide thin film cap to encapsulate the electromechanical device and prevent degradation due to wafer thinning, dicing and package assembly induced stresses, thereby strengthening the survivability of the electromechanical device in the encapsulated cavity. During redistribution layer processing, a metal thin film shield, such as a copper layer, is formed over the wafer surface, patterned and metalized.

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Номер записи: 16
28-02-2013 дата публикации

Glass as a substrate material and a final package for mems and ic devices

Номер: US20130050227A1
Автор: David William Burns, Justin Phelps Black, Kurt Edward Petersen, Nicholas Ian Buchan, Philip Jason Stephanou, Ravindra V. Shenoy, Srinivasan Kodaganallur Ganapathi
Принадлежит: Qualcomm Mems Technologies Inc

This disclosure provides systems, methods and apparatus for glass packaging of integrated circuit (IC) and electromechanical systems (EMS) devices. In one aspect, a glass package may include a glass substrate, a cover glass and one or more devices encapsulated between the glass substrate and the cover glass. The cover glass may be bonded to the glass substrate with an adhesive such as an epoxy, or a metal bond ring. The glass package also may include one or more signal transmission pathways between the one or more devices and the package exterior. In some implementations, a glass package including an EMS and/or IC device is configured to be directly attached to a printed circuit board (PCB) or other integration substrate by surface mount technology.

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Номер записи: 17
28-03-2013 дата публикации

Surface mount actuator

Номер: US20130077948A1
Автор: Roman C. Gutierrez
Принадлежит: DigitalOptics Corp MEMS

A silicon MEMS device can have at least one solder contact formed thereupon. The silicon MEMS device can be configured to be mounted to a circuit board via the solder contact(s). The silicon MEMS device can be configured to be electrically connected to the circuit board via the solder contact(s).

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Номер записи: 18
18-04-2013 дата публикации

Bond pad structure and fabricating method thereof

Номер: US20130093104A1
Автор: Chien-Hsin Huang, Hui-Min Wu, Kuan-Yu Wang, Kun-Che Hsieh, Ming-I Wang
Принадлежит: United Microelectronics Corp

A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

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Номер записи: 19
16-05-2013 дата публикации

Miniaturized Electrical Component Comprising an MEMS and an ASIC and Production Method

Номер: US20130119492A1
Автор: Anton Leidl, Gregor Feiertag, Hans Krueger, Wolfgang Pahl
Принадлежит: EPCOS AG

The invention relates to a miniaturized electrical component comprising an MEMS chip and an ASIC chip. The MEMS chip and the ASIC chip are disposed on top of each other; an internal mounting of MEMS chip and ASIC chip is connected to external electrical terminals of the electrical component by means of vias through the MEMS chip or the ASIC chip.

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Номер записи: 20
23-05-2013 дата публикации

Air cavity package configured to electrically couple to a printed circuit board and method of providing same

Номер: US20130128487A1
Автор: Chi Kwong Lo, Lik Hang Wan, Ming Wa Tam
Принадлежит: UBOTIC INTELLECTUAL PROPERTY CO Ltd

In some examples, a semiconductor package can be configured to electrically couple to a printed circuit board. The semiconductor package can include: (a) a lid having one or more first electrically conductive leads; (b) a base having a top, a bottom and one or more sides between the top and the bottom, the base having one or more second electrically conductive leads electrically coupled to the one or more first electrically conductive leads; (c) one or more first semiconductor devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads; and (d) one or more first micro-electrical-mechanical system devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads. The lid can be coupled to the base and at least one of the lid or the base has at least one port hole. The one or more second electrically conductive leads can be configured to couple to the printed circuit board at a first side of the one or more sides of the base. Other embodiments are disclosed.

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Номер записи: 21
06-06-2013 дата публикации

Mems acoustic transducer and method for fabricating the same

Номер: US20130140655A1
Автор: Chien-Nan YEH, Chin-Hung Wang, Hsin-Li Lee, Jien-Ming Chen, Li-Chi Pan, Tzong-Che Ho
Принадлежит: Industrial Technology Research Institute ITRI

A MEMS acoustic transducer is provided, which includes a substrate, a MEMS chip, and a housing. The substrate has a first opening area and a lower electrode layer disposed over a surface of the substrate, wherein the first opening area includes at least one hole allowing acoustic pressure to enter the MEMS acoustic transducer. The MEMS chip is disposed over the surface of the substrate, including a second opening area and an upper electrode layer partially sealing the second opening area, wherein the upper electrode layer and the lower electrode layer, which are parallel to each other and have a gap therebetween, form an induction capacitor. The housing is disposed over the MEMS chip or the surface of the substrate creating a cavity with the MEMS chip or the substrate. In addition, a method for fabricating the above MEMS acoustic transducer is also provided.

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Номер записи: 22
04-07-2013 дата публикации

Semiconductor package substrate and method, in particular for mems devices

Номер: US20130170166A1
Автор: Federico Giovanni Ziglioli, Giovanni Graziosi, Mario Francesco Cortese
Принадлежит: STMICROELECTRONICS SRL

A semiconductor package substrate suitable for supporting a damage-sensitive device, including a substrate core having a first and opposite surface; at least one pair of metal layers covering the first and opposite surfaces of the package substrate core, which define first and opposite metal layer groups, at least one of said layer groups including at least one metal support zone; one pair of solder mask layers covering the outermost metal layers of the at least one pair of metal layers; and a plurality of routing lines; wherein the at least one metal support zone is formed so that it lies beneath at least one side of the base of the damage-sensitive device and so as to occupy a substantial portion of the area beneath the damage-sensitive device which is free of said routing lines; a method for the production of such substrate is also described.

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Номер записи: 23
14-11-2013 дата публикации

Method for mems device fabrication and device formed

Номер: US20130299926A1
Автор: Joseph Damian Gordon Lacey, Mickael Renault, Thomas L. Maguire, Vikram Joshi
Принадлежит: Cavendish Kinetics Inc

The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

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Номер записи: 24
05-12-2013 дата публикации

Chip package and method for forming the same

Номер: US20130320559A1
Автор: Shu-Ming Chang, Tsang-Yu Liu, Yen-Shih Ho, Yu-Ting Huang
Принадлежит: XinTec Inc

An embodiment of the invention provides a chip package including: a first semiconductor substrate; a second semiconductor substrate disposed on the first semiconductor substrate, wherein the second semiconductor substrate includes a lower semiconductor layer, an upper semiconductor layer, and an insulating layer located between the lower semiconductor layer and the upper semiconductor layer, and a portion of the lower semiconductor layer electrically contacts with at least a pad on the first semiconductor substrate; a signal conducting structure disposed on a lower surface of the first semiconductor substrate, wherein the signal conducting structure is electrically connected to a signal pad on the first semiconductor substrate; and a conducting layer disposed on the upper semiconductor layer of the second semiconductor substrate and electrically contacted with the portion of the lower semiconductor layer electrically contacting with the at least one pad on the first semiconductor substrate.

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Номер записи: 25
06-03-2014 дата публикации

Mems packaging scheme using dielectric fence

Номер: US20140061824A1
Автор: Loi N. Nguyen, Venkata Ramana Yogi Mallela, Venkatesh Mohanakrishnaswamy
Принадлежит: STMicroelectronics lnc USA

A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.

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Номер записи: 26
01-01-2015 дата публикации

FLEXIBLE HIGH-VOLTAGE THIN FILM TRANSISTORS

Номер: US20150001539A1
Автор: Akinwande Akintunde I., Smith Melissa Alyson
Принадлежит: Massachusetts Institute of Technology

A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages. 1. A flexible high-voltage thin-film transistor comprising:a gate electrode;a source electrode;a drain electrode;a dielectric layer, wherein a first portion of the dielectric layer is disposed between the gate electrode and the source electrode, and wherein a second portion of the dielectric layer is disposed between the gate electrode and the drain electrode; and the drain electrode is laterally offset from the gate electrode; and', 'the dielectric layer is configured such that a voltage at the drain electrode can be maintained at greater than about 50V in operation of the flexible high-voltage thin-film transistor., 'a flexible semiconductor layer disposed between, and in electrical communication with, the source electrode and the drain electrode, the flexible semiconductor layer being electrically insulated from the gate electrode, wherein2. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer has a dielectric constant that is higher than about 4.0.3. The flexible high-voltage thin-film transistor of claim 1 , wherein the dielectric layer has a dielectric constant that is higher than about 4.3 claim 1 , about 4.5 claim 1 , about 4.8 claim 1 , about 5.0 claim 1 , about 5.3 claim 1 , about 5.5 claim 1 , about 6.0 claim 1 , about 6.5 claim 1 , or about 7.0.4. The flexible high-voltage thin-film ...

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Номер записи: 27
04-01-2018 дата публикации

MEMS DEVICE, HEAD AND LIQUID JET DEVICE

Номер: US20180001639A1
Автор: TANAKA Shuichi
Принадлежит:

Provided are an MEMS device, a head, and a liquid jet device in which substrates are inhibited from warping, so that a primary electrode and a secondary electrode can be reliably connected to each other. Included are a primary substrate provided with a bump including a primary electrode and a secondary substrate provided with a secondary electrode on a bottom surface of a recessed portion formed by an adhesive layer The primary substrate and the secondary substrate are joined together with the adhesive layer the primary electrode is electrically connected to the secondary electrode with the bump inserted into the recessed portion and part of the bump and the adhesive layer forming the recessed portion overlap each other in a direction in which the bump is inserted into the recessed portion 1. An MEMS device comprising:a primary substrate provided with a bump including a primary electrode; anda secondary substrate provided with a secondary electrode on a bottom surface of a recessed portion formed by an adhesive layer, wherein the primary substrate and the secondary substrate are joined together with the adhesive layer,the primary electrode is electrically connected to the secondary electrode with the bump inserted into the recessed portion, andpart of the bump and the adhesive layer forming the recessed portion overlap each other in a direction in which the bump is inserted into the recessed portion.2. The MEMS device according to claim 1 , wherein the bump includes an elastic core portion claim 1 , and a metal film provided on a surface of the core portion.3. The MEMS device according to claim 2 , wherein the primary substrate is provided with a plurality of the primary electrodes claim 2 ,the core portion of the bump is provided independently for each of the primary electrodes, andthe adhesive layer is provided between each pair of the core portions adjacent to each other.4. The MEMS device according to any one of to claim 2 , wherein the adhesive layer is made of ...

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Номер записи: 28
07-01-2021 дата публикации

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

Номер: US20210002129A1
Автор: GOGOI BISHNU PRASANNA
Принадлежит: Versana Micro Inc.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMS) comprising:a first sensor configured to measure a first parameter;a second sensor configured to measure a second parameter;a third sensor configured to measure a third parameter wherein the first, second, and third parameters are different, wherein the first, second, and third sensors are formed on or in a single semiconductor substrate using a monolithic semiconductor process, and wherein the a layer of the monolithic semiconductor process is common to the first, second, and third sensors.2. The monolithically integrated multi-sensor of wherein the first sensor is a micro-electrical-mechanical system (MEMS) sensor.3. The monolithically integrated multi-sensor of wherein the second sensor is a MEMS sensor.4. The monolithically integrated multi-sensor of wherein the third sensor comprises a MEMS sensor.5. The monolithically integrated multi-sensor of wherein the layer of the monolithic semiconductor process is patterned and etched simultaneously on the first claim 1 , second claim 1 , and third sensors.6. The monolithically integrated multi-sensor of wherein the ...

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Номер записи: 29
07-01-2016 дата публикации

METHODS AND DEVICES FOR MICROELECTROMECHANICAL PRESSURE SENSORS

Номер: US20160002026A1
Автор: Allan Charles, Chodavarapu Vamsy, MERDASSI ADEL
Принадлежит:

MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics. 1. A MEMS device comprising:a membrane formed within a device layer;an upper cavity formed within a top layer; andan opening formed within a handling layer.2. The MEMS device according to claim 1 , whereinthe device layer, top layer, and handling layer are all separate silicon substrates that are bonded together to provide the MEMS device.3. The MEMS device according to claim 1 , whereinthe membrane is at least one of circular and forms part of at least one of a capacitive sensor, a pressure sensor, and an absolute pressure sensor.4. The MEMS device according to claim 1 , further comprisingat least one of through silicon vias within device layer and electrode metallization upon the top layer on the opposite side to the upper cavity.5. The MEMS device according to claim 1 , further comprisinga CMOS electronics wafer which is attached to the top layer on the opposite side to the upper cavity.6. The MEMS device according to claim 1 , whereinthe device layer, top layer, and handling layer are all assembled before the opening in the handling layer is made and the device layer is processed through the opening to form the membrane which is thinner than the thickness of the device layer.7. The MEMS device according to claim 1 , whereinthe MEMS device is formed concurrently with at ...

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Номер записи: 30
07-01-2016 дата публикации

SEMICONDUCTOR DEVICE WITH THROUGH MOLDING VIAS AND METHOD OF MAKING THE SAME

Номер: US20160002027A1
Автор: Cheng Chun-Wen, Peng Jung-Huei, Teng Yi-Chuan, Tsai Hung-Chia, Tsai Shang-Ying
Принадлежит:

A method of forming a semiconductor device includes bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion. The method also includes removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation. 1. A method of forming a semiconductor device , the method comprising:bonding a capping wafer and a base wafer to form a wafer package, the base wafer comprises a first chip package portion, a second chip package portion, and a third chip package portion, and', 'the capping wafer comprises a plurality of isolation trenches, each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion;, 'wherein'}removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact; andseparating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation.2. The method of claim 1 , further comprising:bonding the ...

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Номер записи: 31
07-01-2016 дата публикации

Integrated cmos and mems sensor fabrication method and structure

Номер: US20160002028A1
Автор: Peter Smeys
Принадлежит: InvenSense Inc

A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

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Номер записи: 32
05-01-2017 дата публикации

Microstructure plating systems and methods

Номер: US20170001856A1
Автор: Chris Finn, Daniel Baseman, Gordon A. Shaw, Jim G. Hunter
Принадлежит: Honeywell International Inc

Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.

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Номер записи: 33
05-01-2017 дата публикации

Electronic systems with through-substrate interconnects and mems device

Номер: US20170001858A1
Автор: Charles W. Blackmer, Scott G. Adams
Принадлежит: Kionix Inc

Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

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Номер записи: 34
05-01-2017 дата публикации

MEMS Devices and Fabrication Methods Thereof

Номер: US20170001860A1
Автор: Cheng Chun-Wen, Chu Chia-Hua, Lee Te-Hao, Lin Chung-Hsien
Принадлежит:

A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode. 1. A semiconductor device comprising:a carrier having a plurality of cavities; a shielding layer on the carrier and coupled to ground;', 'a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate; and', 'a moving element over the bottom electrode; and, 'a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprisesa semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.2. The semiconductor device of claim 1 , wherein:the MEMS substrate comprises a plurality of air channels coupled to the cavities of the carrier.3. The semiconductor device of claim 1 , wherein:the shielding layer is formed of polysilicon; andthe bottom electrode is formed of polysilicon.4. The semiconductor device of claim 1 , further comprising:an oxide layer over and in contact with the shielding layer.5. The semiconductor device of claim 4 , wherein:the plurality of vias extend through the oxide layer.6. The semiconductor device of claim 1 , wherein:the shielding layer is in contact with the carrier.7. The semiconductor device of claim 1 , further comprising:a conductive layer formed between the semiconductor substrate and the MEMS substrate, wherein the conductive layer is thinner than the ...

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Номер записи: 35
04-01-2018 дата публикации

MEMS SENSOR WITH HIGH VOLTAGE SWITCH

Номер: US20180002162A1
Автор: SEEGER Joseph, THOMPSON Matthew
Принадлежит: InvenSense, Inc.

A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope). 1. A MEMS device comprising: a post anchor;', 'a flexible MEMS arm coupled to the post anchor;', 'an actuator electrode; and', 'a contact electrode., 'a MEMS switch operable to switch a signal, wherein the MEMS switch comprises2. The MEMS device of claim 1 , wherein the contact electrode comprises a metal.3. The MEMS device of claim 1 , wherein the contact electrode comprises silicon.4. The MEMS device of claim 1 , wherein the contact electrode comprises a conductive coating.5. The MEMS device of claim 1 , further comprising a CMOS layer claim 1 , wherein the actuator electrode and the contact electrode are on the CMOS layer.6. The MEMS device of claim 1 , further comprising a MEMS layer claim 1 , wherein the actuator electrode and the contact electrode are on the MEMS layer.7. The MEMS device of claim 1 , comprising an anti-stiction coating on the contact electrode.8. The MEMS device of claim 1 , further comprising:an integrated circuit die comprising a transistor; anda MEMS sensor structure electrically coupled to the integrated circuit die, wherein the MEMS switch is electrically coupled to the integrated circuit die, wherein the signal is applied to the MEMS sensor structure, and wherein the MEMS switch is operable to switch the signal.9. The MEMS device of claim 8 , wherein the integrated circuit die comprises a CMOS layer.10. The MEMS device of claim 8 , wherein the signal is characterized by a voltage that is too high to be effectively switched by the transistor.11. The MEMS device of claim 8 , wherein the transistor operates in a range of voltages at or below a certain maximum operating voltage claim ...

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Номер записи: 36
04-01-2018 дата публикации

3D MEMS DEVICE WITH HERMETIC CAVITY

Номер: US20180002163A1
Автор: Boysel Robert Mark
Принадлежит:

A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure. 1. A three dimensional (3D) micro-electro-mechanical system (MEMS) device comprising:a MEMS wafer including a MEMS structure, the MEMS wafer having opposed first and second sides;a top cap wafer and a bottom cap wafer respectively bonded to the first side and the second side of the MEMS wafer, the top cap wafer, the bottom cap wafer and the MEMS wafer being stacked along a stacking axis and together forming at least one hermetic cavity enclosing the MEMS structure, at least one of the top cap wafer and the bottom cap wafer being a silicon-on-insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer, one of the cap handle layer and of the cap device layer having an inner side bonded to the MEMS wafer, and the other one of the cap handle layer and of the cap device layer having an outer side with outer electrical contacts formed thereon; andan electrically conductive path extending through the cap handle layer and through the cap device layer of the SOI cap wafer, the electrically conductive path establishing an electrical ...

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Номер записи: 37
04-01-2018 дата публикации

MEMS Device with Multi Pressure

Номер: US20180002166A1
Автор: Kai-Fung Chang, Len-Yi Leu, Lien-Yao TSAI
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

Micro-electromechanical (MEMS) devices and methods of forming are provided. The MEMS device includes a first substrate including a first conductive feature, a first movable element positioned over the first conductive feature, a second conductive feature, and a second movable element positioned over the second conductive feature. The MEMS device also includes a cap bonded to the first substrate, where the cap and the first substrate define a first sealed cavity and a second sealed cavity. The first conductive feature and the first movable element are disposed in the first sealed cavity and the second conductive feature and the second movable element are disposed in the second sealed cavity. A pressure of the second cavity is higher than a pressure of the first sealed cavity, and an out gas layer is disposed in a recess of the cap that partially defines the second sealed cavity.

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Номер записи: 38
02-01-2020 дата публикации

MEMS Package and Method of Manufacturing the Same

Номер: US20200002160A1
Автор: Hayashi Hironobu, Kobayashi Toyotaka, Shiraishi Masashi
Принадлежит:

A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a plurality of bonding bumps adhered to both of an opposing surface, of the element substrate and the package substrate. The MEMS package has unevenly arranged structure which all the plurality of bonding bumps are unevenly arranged in a part of the opposing surface. 1. A MEMS package comprising:a MEMS chip, and a package substrate which the MEMS chip is adhered;wherein the MEMS chip comprises an element substrate which a movable element is formed,wherein the MEMS package comprises a plurality of bonding bumps adhered to both an opposing surface, of the element substrate, which opposes the package substrate and the package substrate,wherein the MEMS package comprises an unevenly arranged structure which all the plurality of bonding bumps are unevenly arranged in a part of the opposing surface.2. The MEMS package according to claim 1 ,wherein the opposing surface comprises a boding area, which all the plurality of bonding bumps are arranged, and a non-bonding area, which the bonding bumps are not arranged, the size of the non-bonding area is larger than the size of the boding area.3. The MEMS package according to claim 1 ,wherein the opposing surface comprises a boding area, which all the plurality of bonding bumps are arranged, and a non-bonding area, which the bonding bumps are not arranged, the size of the non-bonding area is larger than the size of the boding area,wherein the MEMS package further comprises a dummy bump which is arranged in the non-bonding area, and which is adhered to the opposing surface and is not adhered to the package substrate.4. The MEMS package according to claim 2 ,wherein the element substrate is formed in a rectangular-shape in a plan view,wherein the bonding area is assigned to an area including only one of the four corner parts of the opposing surface.5. ...

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Номер записи: 39
02-01-2020 дата публикации

SEMICONDUCTOR DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME

Номер: US20200002162A1
Автор: CHEN Yin-Hao, Lai Lu-Ming, TSAI Yu-Hsuan, TSENG Chi Sheng, WU Hsin Lin, YU San-Kuei
Принадлежит: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate. 1. A semiconductor device package , comprising:a semiconductor device;a non-semiconductor substrate over the semiconductor device; anda first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.2. The semiconductor device package of claim 1 , further comprising a patterned insulation layer between the semiconductor device and the non-semiconductor substrate.3. The semiconductor device package of claim 2 , wherein the non-semiconductor substrate comprises a through hole claim 2 , the first connection element extending from the semiconductor device into the through hole.4. The semiconductor device package of claim 3 , further comprising a second connection element in the through hole of the non-semiconductor substrate and surrounding the first connection element.5. The semiconductor device package of claim 4 , wherein the second connection element at least partially fills the through hole thereby forming a space between the semiconductor device claim 4 , the patterned insulation layer claim 4 , and the non-semiconductor substrate.6. The semiconductor device package of claim 2 , wherein the first connection element comprises solder material.7. The semiconductor device package of claim 1 , wherein the non-semiconductor substrate further comprises a patterned conductive layer on a surface away from the semiconductor device.8. The semiconductor device package of claim 1 , wherein the non-semiconductor substrate is narrower than the semiconductor device claim 1 , the first connection element extending from the semiconductor device ...

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Номер записи: 40
03-01-2019 дата публикации

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURE AND METHOD FOR FORMING THE SAME

Номер: US20190002275A1
Автор: Chang Kai-Fung, LEU Len-Yi, TSAI Lien-Yao
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer. 1. A micro-electro-mechanical system (MEMS) device structure , comprising:a micro-electro-mechanical system (MEMS) substrate;a substrate formed over the MEMS substrate, wherein the substrate comprises a semiconductor via through the substrate;a dielectric layer formed over the substrate;a polymer layer formed on the dielectric layer; anda conductive layer formed in the dielectric layer and the polymer layer, wherein the conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.2. The micro-electro-mechanical system (MEMS) device structure as claimed in claim 1 , further comprising:a passivation layer formed over the polymer layer;an under bump metallization (UBM) layer formed in the passivation layer and formed on the conductive layer; andan electrical connector formed over the UBM layer, wherein the electrical connector is electrically connected to the conductive layer through the UBM layer.3. The micro-electro-mechanical system (MEMS) device structure as claimed in claim 1 , wherein the polymer layer is made of polyimide (PI) or polybenzoxazole (PBO).4. The micro-electro-mechanical system (MEMS) device structure as claimed in claim 1 , wherein sidewalls of the semiconductor via are surrounded by an ...

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Номер записи: 41
05-01-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD

Номер: US20170005045A1
Автор: Merz Matthias, Ponomarev Youri Victorovitch, Van Dal Mark
Принадлежит: NXP B.V.

Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed. 1. A semiconductor device comprising: a first conductive support structure having a first metal layer and a second conductive support structure having a second metal layer;', 'a cavity between the first conductive support structure and the second conductive support structure;', 'an inertial mass element having at least one metal portion which is vertically displaced with respect to the first metal layer and the second metal layer; and', 'a first plurality of conductive connection vias that conductively couple the inertial mass element to the first metal layer and the second metal layer, wherein at least one of the first plurality of conductive connection vias is configured to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by dimensions of the first plurality of conductive connection vias., 'a stack of patterned metal layers separated by dielectric layers, the dielectric layers having a first plurality of conductive vias that connect metal layers adjacent to the dielectric layers, the stack comprising2. The semiconductor device of claim 1 , further comprising:a detector configured to detect a disruption in the conductive coupling of the inertial mass element to the first metal layer ...

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Номер записи: 42
13-01-2022 дата публикации

Crossover Circuit

Номер: US20220014851A1
Автор: Chang Chieh-Yao, Chang Chun-I, Chang Hao-Hsin, Chen Hsi-Sheng, Chen Wen-Chien, Liang Jemm Yue, LO Chiung C.
Принадлежит: xMEMS Labs, Inc.

A crossover circuit, disposed within a sound producing device including a first sound producing cell driven by a first driving signal and a second sound producing cell driven by a second driving signal, includes a first filter receiving an input signal at an input terminal of the first filter, a first subtraction circuit, and a second filter coupled between the output terminal of the first filter and the second input terminal of the first subtraction circuit. A first input terminal of the first subtraction circuit is coupled to the input terminal of the first filter; a second input terminal of the first subtraction circuit is coupled to an output terminal of the first filter. The crossover circuit produces the first driving signal and the second driving signal according to a first output signal of the first subtraction circuit and a second output signal of the first filter respectively. 1. A crossover circuit , disposed within a sound producing device , abbreviated as SPD , wherein the SPD comprises a first sound producing cell driven by a first driving signal and a second sound producing cell driven by a second driving signal , the crossover circuit comprising:a first filter, receiving an input signal at an input terminal of the first filter;a first subtraction circuit, wherein a first input terminal of the first subtraction circuit is coupled to the input terminal of the first filter, a second input terminal of the first subtraction circuit is coupled to an output terminal of the first filter; anda second filter, coupled between the output terminal of the first filter and the second input terminal of the first subtraction circuit;wherein the crossover circuit produces the first driving signal according to a first output signal of the first subtraction circuit;wherein the crossover circuit produces the second driving signal according to a second output signal of the first filter.2. The crossover circuit of claim 1 , wherein the second filter and the second sound ...

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Номер записи: 43
04-01-2018 дата публикации

INORGANIC WAFER HAVING THROUGH-HOLES ATTACHED TO SEMICONDUCTOR WAFER

Номер: US20180005922A1
Автор: JR. Daniel Wayne, Levesque, Piech Garrett Andrew, Shorey Aric Bruce
Принадлежит:

A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. 1. A process comprising:forming a damage track in an inorganic wafer bonded to semiconductor wafer using a laser that emits a wavelength of light, wherein the semiconductor is opaque to the wavelength of light and the inorganic wafer is transparent to the wavelength of light; andenlarging the damage track in the inorganic wafer to form a hole through the inorganic wafer by etching, the hole terminating at an interface between the semiconductor wafer and the inorganic wafer.2. The process of claim 1 , wherein the semiconductor wafer is a bare semiconductor wafer.3. The process of claim 1 , wherein the semiconductor wafer is a silicon wafer.4. The process of claim 1 , wherein the etching is performed with an etchant that etches the inorganic wafer at a first rate and the semiconductor wafer at a second rate claim 1 , and the first rate is at least 10 times the second rate.5. The process of claim 1 , wherein the inorganic wafer has a resistivity of at least 10Ω-m at room temperature and a breakdown voltage of at least 1 kV for the thickness of 0.5 mm at room temperature.6. The process of claim 1 , wherein the inorganic wafer is made of ...

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Номер записи: 44
04-01-2018 дата публикации

Side Ported MEMS Sensor Device Package and Method of Manufacturing Thereof

Номер: US20180005969A1
Автор: Mikko Va Suvanto
Принадлежит: Akustica Inc, ROBERT BOSCH GMBH

A MEMS sensor device package comprises a sensor assembly comprising a sensor device and a sensor circuit communicating coupled to the sensor device, The MEMS sensor device package further comprises an assembly package housing having a top member and a bottom member attached to the top member for encapsulating the sensor assembly. A passageway fluidly coupled the sensor device to attributes outside the package housing the passageway is embedded into the package housing, wherein the top member comprising a top wall and side walls, the side walls are attached to the bottom member, and the passageway is embedded into at least one of the side walls.

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Номер записи: 45
07-01-2021 дата публикации

Die Stack Arrangement Comprising a Die-Attach-Film Tape and Method for Producing Same

Номер: US20210005568A1
Автор: Gierl Karolina, STEIERT Matthias
Принадлежит:

A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region. 1. A method for producing a stack arrangement , comprising the following steps:providing a base substrate with a sensor component arranged thereon;applying a spacer layer on the base substrate;structuring the spacer layer in order to expose the sensor component and an associated cavity region;providing a stack element having a DAF (Die Attach Film) tape element arranged thereon and arranging the stack element having the DAF tape element on the spacer layer; andcuring the DAF tape element by exerting heat and/or mechanical pressure in order to solidify DAF material of the DAF tape element.2. The method as claimed in claim 1 , wherein structuring the spacer layer comprises forming a bleed stopper structure in the spacer layer in a manner adjoining the cavity region claim 1 , and wherein the bleed stopper structure comprises cutouts.3. The method as claimed in claim 2 , wherein the cutouts arranged in the bleed stopper structure are configured claim 2 , during the step of curing the DAF tape element claim 2 , due to providing capillary forces on partly liquefied DAF material of the DAF tape element claim 2 , to guide the partly liquefied DAF material in a targeted manner into the cutouts and to accommodate it there.4. The method as claimed in claim 2 , wherein the cutouts comprise a rectangular shape.5. The method as claimed in claim 2 , wherein the cutouts comprise a sawtooth shape.6. The method as claimed in claim 2 , wherein the cutouts comprise a tapering shape.7. The ...

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Номер записи: 46
04-01-2018 дата публикации

Piezoelectric package-integrated sensing devices

Номер: US20180006208A1
Автор: Adel A. Elsherbini, Feras Eid, Georgios C. Dogiamis, Johanna M. Swan, Sasha N. OSTER, Shawna M. LIFF, Thomas L. SOUNART
Принадлежит: Intel Corp

Embodiments of the invention include a sensing device that includes a base structure having a proof mass that is positioned in proximity to a cavity of an organic substrate, a piezoelectric material in contact with a first electrode of the base structure, and a second electrode in contact with the piezoelectric material. The proof mass deflects in response to application of an external force or acceleration and this deflection causes a stress in the piezoelectric material which generates a voltage differential between the first and second electrodes.

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Номер записи: 47
05-01-2017 дата публикации

MICROELECTROMECHANICAL MICROPHONE

Номер: US20170006368A1
Автор: BARBARA Paul Anthony, Brioschi Roberto, Formosa Kevin, Gritti Alex
Принадлежит:

A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip. 1. A microelectromechanical microphone comprising:a substrate;a sensor chip bonded to the substrate and integrating a microelectromechanical acoustic transducer; anda control chip bonded to the substrate and operatively coupled to the sensor chip, the sensor chip having a first portion that is overlying and bonded to the control chip.2. The microelectromechanical microphone according to claim 1 , wherein the control chip has a first face claim 1 , wherein the first portion of the sensor chip is bonded to the first face of the control chip claim 1 , wherein the acoustic transducer includes a transduction member acoustically communicating with a sound port in the substrate.3. The microelectromechanical microphone according to claim 2 , wherein the substrate includes an assembly base claim 2 , the sensor chip has a second portion coupled to the base.4. The microelectromechanical microphone according to claim 3 , comprising an adhesive layer that is partially on the base and partially on the first face of the control chip along a perimeter of the sensor chip claim 3 , the sensor chip being bonded to the base and to the control chip through the adhesive layer.5. The microelectromechanical microphone according to claim 3 , wherein the base has a first thickness and the control chip has a second thickness that is substantially the same thickness as the first thickness.6. The microelectromechanical microphone according to claim 3 , wherein the base extends around the sound port.7. The ...

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Номер записи: 48
02-01-2020 дата публикации

Electronic device including a capacitor

Номер: US20200006470A1
Автор: Baohua Niu, Chi-Yuan Shih, Kai-Fung Chang, Lien-Yao TSAI, Yi-Chuan Teng
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

An electronic device includes a capacitor and a passivation layer covering the capacitor. The capacitor includes a first electrode, a dielectric layer disposed over the first electrode and a second electrode disposed over the dielectric layer. An area of the first electrode is greater than an area of the dielectric layer, and the area of the dielectric layer is greater than an area of the second electrode so that a side of the capacitor has a multi-step structure.

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Номер записи: 49
08-01-2015 дата публикации

LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES

Номер: US20150008788A1
Автор: Cicek Paul-Vahe, El-Gamal Mourad, Nabki Frederic
Принадлежит:

A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation. 1. A method comprising:(a) providing a substrate;(b) providing at least one lower metallization of a plurality of lower metallizations;(c) providing a first sacrificial layer and a second sacrificial layer;(d) providing at least one middle metallization of a plurality of middle metallizations;(e) providing a structural layer;(f) providing at least one upper metallization of a plurality of upper metallizations; and(g) removing the first sacrificial layer and second sacrificial layer.2. The method according to claim 1 , wherein executing steps (b) through (g) results in the substrate being exposed to a maximum temperature of at least one of 350° C. and 250° C.3. The method according to claim 1 , wherein steps (b) through (g) are implemented in any order claim 1 , the order determined in dependence upon a low temperature MEMS device being manufactured according to the method.4. The method according to claim 1 , wherein providing ...

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Номер записи: 50
12-01-2017 дата публикации

Cmos-mems device structure, bonding mesa structure and associated method

Номер: US20170008757A1
Автор: Chun-Wen Cheng, Yi-Chuan Teng
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

The present disclosure provides a CMOS-MEMS device structure. The CMOS-MEMS device structure includes a sensing substrate and a CMOS substrate. The sensing substrate includes a bonding mesa structure. The CMOS substrate includes a top dielectric layer. The sensing substrate and the CMOS substrate are bonded through the bonding mesa structure, and the bonding mesa structure defines a bonding gap between the CMOS substrate and the sensing substrate.

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Номер записи: 51
12-01-2017 дата публикации

MEMS Devices and Fabrication Methods Thereof

Номер: US20170008758A1
Автор: Cheng Chun-Wen, Chu Chia-Hua, Lee Te-Hao, Lin Chung-Hsien
Принадлежит:

A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a first side bonded on the carrier, a moving element over a bottom electrode, wherein the bottom electrode is formed of polysilicon and a second side having a plurality of bonding pads and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode and the first moving element is between the top electrode and the bottom electrode. 1. A semiconductor device comprising:a carrier having a plurality of cavities; a first side bonded on the carrier;', 'a first moving element over a bottom electrode, wherein the bottom electrode is formed of polysilicon; and', 'a second side having a plurality of bonding pads; and, 'a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprisesa semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the first moving element is between the top electrode and the bottom electrode.2. The semiconductor device of claim 1 , wherein:the MEMS substrate comprises a plurality of air channels coupled to the cavities of the carrier.3. The semiconductor device of claim 1 , wherein:each cavity of the plurality of cavities comprises an extrusion.4. The semiconductor device of claim 1 , further comprising:a first dielectric layer deposited on the first side of the MEMS substrate;a vapor HF stop layer formed over the first dielectric layer;a second dielectric layer formed over the vapor HF stop layer; anda bonding layer formed over the second dielectric layer.5. The semiconductor device of claim 4 , where:the first dielectric layer is a first oxide layer;the vapor HF stop layer is a low stress nitride layer;the second dielectric layer is a second oxide layer; andthe bonding layer is formed of polysilicon.6. The ...

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Номер записи: 52
12-01-2017 дата публикации

MEMS-CMOS-MEMS PLATFORM

Номер: US20170008760A1
Автор: GURIN Ilya, LLOYD Stephen
Принадлежит:

A package combining a MEMS substrate, a CMOS substrate and another MEMS substrate in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first MEMS substrate and a CMOS substrate with a first surface and a second surface and where the first MEMS substrate is attached to the first surface of the CMOS substrate. The package further includes a second MEMS substrate with a first surface and a second surface, where the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate. The first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are provided with electrical inter-connects. 1. A package comprising:a sensor chip comprising;a first MEMS substrate anda CMOS substrate with a first surface and a second surface; wherein the first MEMS substrate is attached to the first surface of the CMOS substrate; anda second MEMS substrate with a first surface and a second surface; wherein the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate; andwherein the first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are connected through electrical interconnects.2. The package of claim 1 , wherein the second MEMS substrate further comprises a cavity.3. The package of claim 2 , wherein the second MEMS substrate further comprises a handle substrate and an attached device layer.4. The package of claim 3 , wherein the device layer comprises a moveable structure.5. The package of claim 1 , wherein the first MEMS substrate further comprises a cavity.6. The package of claim 1 , wherein the first MEMS substrate further comprises a handle substrate and an attached device layer.7. The package of ...

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Номер записи: 53
10-01-2019 дата публикации

Method for Producing Mems Transducer, Mems Transducer, Ultrasound Probe, and Ultrasound Diagnostic Apparatus

Номер: US20190008479A1
Автор: Nakayama Yuta
Принадлежит:

Substrate is produced by using a MEMS technique to form multiple diaphragms in a substrate by forming piezoelectric material layer on one surface of the substrate and thereafter by forming openings in the substrate from the other surface of the substrate; substrate and substrate on which signal detection circuit is formed are aligned to each other using at least one of multiple diaphragms as alignment diaphragm; and substrate and substrate are bonded together. 1. A method for producing a MEMS transducer , the method comprising:producing a MEMS substrate by using a MEMS technique to form a plurality of diaphragms in a substrate, the plurality of diaphragms being formed by forming a piezoelectric material layer on one surface of the substrate and thereafter by forming openings in the substrate from the other surface of the substrate;performing alignment between the MEMS substrate and an electronic circuit substrate by using at least one of the plurality of diaphragms as an alignment diaphragm; andbonding together the MEMS substrate and the electronic circuit substrate.2. The method for producing the MEMS transducer according to claim 1 , wherein the MEMS transducer is a piezoelectric micromachined ultrasonic transducer (pMUT).3. The method for producing the MEMS transducer according to claim 1 , wherein a signal detection circuit is formed on the electronic circuit substrate claim 1 , the signal detection circuit detecting a transmission signal or a reception signal for transmission or reception of an ultrasonic wave at the plurality of diaphragms.4. The method for producing the MEMS transducer according to claim 1 , whereinthe plurality of diaphragms include first diaphragms constituting a channel used for the transmission or reception of the ultrasonic wave and second diaphragms not used for the transmission or reception of the ultrasonic wave, andthe alignment diaphragm is at least one of the second diaphragms.5. The method for producing the MEMS transducer ...

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Номер записи: 54
14-01-2016 дата публикации

MICROELECTROMECHANICAL SYSTEMS HAVING CONTAMINANT CONTROL FEATURES

Номер: US20160009548A1
Автор: Bartle Dylan Charles, DICARLO Paul T., GUNES Dogan, Mason Jerod F., PETZOLD David T., Whitefield David Scott
Принадлежит:

Microelectromechanical systems (MEMS) having contaminant control features. In some embodiments, a MEMS die can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS die can further include a contaminant control component implemented relative to the electromechanical assembly. The contaminant control component can be configured to move contaminants relative to the electromechanical assembly. For example, such contaminants can be moved away from the electromechanical assembly. 1. A microelectromechanical systems (MEMS) die comprising:a substrate;an electromechanical assembly implemented on the substrate; anda contaminant control component implemented relative to the electromechanical assembly, the contaminant control component configured to move contaminants relative to the electromechanical assembly.2. The MEMS die of wherein the contaminant control component is configured to move the contaminants away from one or more portions of the electromechanical assembly.3. The MEMS die of wherein the MEMS die is a switching device claim 2 , a capacitance device claim 2 , a gyroscope sensor device claim 2 , an accelerometer device claim 2 , a surface acoustic wave (SAW) device claim 2 , or a bulk acoustic wave (BAW) device.4. The MEMS die of wherein the contaminant control component includes a contaminant capture component.5. The MEMS die of wherein the contaminant capture component includes a voltage element implemented on one or more sides of a perimeter of the MEMS die claim 4 , the voltage element configured to yield an electrostatic force when provided with high voltage.6. The MEMS die of wherein the voltage element includes a conductive ring implemented partially or fully along the perimeter.7. The MEMS die of wherein the conductive ring is implemented on a surface of the substrate.8. The MEMS die of further comprising a ground ring implemented along the perimeter of the die.9. The MEMS die of wherein the conductive ring is ...

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Номер записи: 55
11-01-2018 дата публикации

CMOS-MEMS-CMOS PLATFORM

Номер: US20180009654A1
Автор: LIM Martin, Smeys Peter
Принадлежит: InvenSense, Inc.

A sensor chip includes a first substrate with a first surface and a second surface including at least one CMOS circuit, a first MEMS substrate with a first surface and a second surface on opposing sides of the first MEMS substrate, a second substrate, a second MEMS substrate, and a third substrate including at least one CMOS circuit. The first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the first MEMS substrate. The second surface of the first MEMS substrate is attached to the second substrate. The first substrate, the first MEMS substrate, the second substrate and the packaging substrate are provided with electrical inter-connects. 1. A sensor chip comprising:a first substrate with a first surface and a second surface comprising at least one CMOS circuit;a first MEMS substrate with a first surface and a second surface on opposing sides of the first MEMS substrate;a second substrate;a second MEMS substrate; anda third substrate comprising at least one CMOS circuit;wherein the first surface of the first substrate is attached to a packaging substrate and the second surface of the first substrate is attached to the first surface of the first MEMS substrate; andwherein the second surface of the first MEMS substrate is attached to the second substrate; andwherein the first substrate, the first MEMS substrate, the second substrate and the packaging substrate are provided with electrical inter-connects.2. The sensor chip of claim 1 , wherein the second substrate comprises at least one CMOS circuit.3. The sensor chip of claim 1 , wherein the second substrate comprises a cap layer for the first MEMS substrate and the second MEMS substrate.4. The sensor chip of claim 1 , wherein the second MEMS substrate is connected to the second substrate by a eutectic or a fusion bond.5. The sensor chip of claim 1 , wherein the second MEMS substrate is connected to the third substrate ...

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Номер записи: 56
14-01-2021 дата публикации

PACKAGED PRESSURE SENSOR DEVICE

Номер: US20210009405A1
Автор: Shantaram Sandeep, Tang Jinbang, Yap Weng Foong
Принадлежит:

Embodiments of a packaged electronic device and method of fabricating such a device are provided, where the packaged electronic device includes: a pressure sensor die having a diaphragm on a front side; an encapsulant material that encapsulates the pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material; an interconnect structure formed over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; and a cap attached to an outer dielectric layer of the interconnect structure, the cap having a vent hole generally aligned with the opening through the interconnect structure. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. A method for fabricating a packaged electronic device , the method comprising:attaching a front side of a pressure sensor die to a carrier, the pressure sensor die having a diaphragm on the front side;overmolding the pressure sensor die with an encapsulant material to form an embedded pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material;removing the embedded pressure sensor die from the carrier;forming an interconnect structure over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; andattaching a cap directly to an outer dielectric layer of the interconnect structure, the cap being an integral structure having a vent hole generally aligned with the opening through the interconnect structure, wherein the cap, except for the vent hole, covers an entirety of the outer dielectric layer of the interconnect structure.13. The ...

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Номер записи: 57
14-01-2021 дата публикации

SEMICONDUCTOR DEVICES AND RELATED METHODS

Номер: US20210009406A1
Автор: Oh Sung Jae
Принадлежит:

In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein. 1. An electronic device comprising: a first substrate top side;', 'a first substrate bottom side;', 'a first substrate sidewall;', 'a first encapsulant extending from the first substrate bottom side to the first substrate top side; and', 'a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant;, 'a first substrate comprising a first component top side;', 'a first component bottom side; and', 'a first component sidewall coated by the first encapsulant;, 'a first electronic component embedded in the first substrate and comprising a second component top side comprising a second component terminal and a second active region;', 'a second component bottom side coupled to the first substrate top side; and', 'a second component sidewall;, 'a second electronic component on the first substrate and comprisinga first internal interconnect coupling the second component terminal to the first substrate interconnect; anda cover structure on the first substrate and covering the second component sidewall and the first internal interconnect.2. The electronic device of claim 1 , ...

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Номер записи: 58
10-01-2019 дата публикации

PACKAGING STRUCTURE AND PACKAGING METHOD OF MEMS CHIP AND ASIC CHIP

Номер: US20190010046A1
Автор: Wang Zhiqi
Принадлежит: China Wafer Level CSP Co., Ltd.

A packaging structure integrated with an MEMS chip and an ASIC chip and a packing method are provided. The packaging structure includes: an MEMS chip, an ASIC chip, a first solder bump and a cover plate. The MEMS chip has a front surface and an opposite back surface. The ASIC chip has a front surface and an opposite back surface. The front surface of the ASIC chip is laminated and fixed to the back surface of the MEMS chip, and the ASIC chip is electrically connected to the MEMS chip. The first solder bump is arranged on a side of the ASIC chip facing away from the MEMS chip, and electrically connects to an external circuit. The cover plate includes an accommodating cavity. The MEMS chip is located in the accommodating cavity and the cover plate is hermetically connected to the ASIC chip. 1. A packaging structure integrated with a Micro-Electro-Mechanical System (MEMS) chip and an Application Specific Integrated Circuit (ASIC) chip , comprising:an MEMS chip, wherein the MEMS chip has a front surface and a back surface opposite to each other;an ASIC chip, wherein the ASIC chip has a front surface and a back surface opposite to each other, the front surface of the ASIC chip is laminated and fixed to the back surface of the MEMS chip, and the ASIC chip is electrically connected to the MEMS chip;a first solder bump arranged on a side of the ASIC chip facing away from the MEMS chip, wherein the first solder bump is configured to electrically connect to an external circuit; anda cover plate comprising an accommodating cavity, wherein the cover plate is arranged on the ASIC chip, the MEMS chip is located in the accommodating cavity and the cover plate is hermetically connected to the ASIC chip.2. The packaging structure according to claim 1 , wherein the back surface of the MEMS chip is provided with a second solder bump claim 1 , the front surface of the MEMS chip is provided with a first contact pad electrically connected to the second solder bump; andthe ASIC chip ...

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Номер записи: 59
10-01-2019 дата публикации

HEATER DESIGN FOR MEMS CHAMBER PRESSURE CONTROL

Номер: US20190010047A1
Автор: Chen Hsin-Yu, Cheng Shyh-Wei, Chiang Ji-Hong, Hsu Hsi-Cheng, Wang Chih-Yu, Weng Jui-Chun, Wu Wei-Ding
Принадлежит:

The present disclosure relates to a micro-electromechanical system (MEMs) package. In some embodiments, the MEMs package has a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate. A heating element is electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers. The heating element is vertically separated from the first substrate by the dielectric structure. A MEMs substrate is coupled to the first substrate and has a MEMs device. A hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate. An out-gassing material is disposed laterally between the hermetically sealed chamber and the heating element. 1. A micro-electromechanical system (MEMs) package , comprising:a plurality of conductive interconnect layers disposed within a dielectric structure over an upper surface of a first substrate;a heating element electrically coupled to a semiconductor device within the first substrate by one or more of the plurality of conductive interconnect layers, wherein the heating element is vertically separated from the first substrate by the dielectric structure;a MEMs substrate coupled to the first substrate and comprising a MEMs device, wherein a hermetically sealed chamber surrounding the MEMs device is disposed between the first substrate and the MEMs substrate; andan out-gassing material disposed laterally between the hermetically sealed chamber and the heating element.2. The MEMS package of claim 1 , further comprising:a capping substrate coupled to an opposite side of the MEMs substrate as the first substrate, wherein the capping substrate has sidewalls and a horizontally extending surface that define the hermetically sealed chamber.3. The MEMs package of claim 1 , wherein the out-gassing material directly contacts sidewalls and a horizontally extending surface of ...

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Номер записи: 60
09-01-2020 дата публикации

MICROMECHANICAL PRESSURE SENSOR AND METHOD FOR PRODUCING SAID MICROMECHANICAL PRESSURE SENSOR

Номер: US20200010317A1
Автор: DANNENBERG Arne, Henn Tobias
Принадлежит:

A micromechanical pressure sensor, having a sensor core formed in a silicon substrate in a pressure-sensitive region, having a sensor membrane, a first cavity being formed in the silicon substrate on the sensor membrane; a second cavity formed between a rear-side surface of the silicon substrate and the sensor core, access holes that go out from the rear-side surface of the silicon substrate being connected to the second cavity; and at least one anchoring recess going out from the rear-side surface being formed in an anchoring region of the silicon substrate surrounding the pressure-sensitive region, the anchoring recess being formed such that a molding compound can flow into the anchoring recess. 114-. (canceled)15. A micromechanical pressure sensor system , comprising: a sensor core, formed in a silicon substrate in a pressure-sensitive region, the sensor core including a sensor membrane, a first cavity formed on the sensor membrane in the silicon substrate, a second cavity formed between a rear-side surface of the silicon substrate and the sensor core, access holes that go out from the rear-side surface of the silicon substrate being connected to the second cavity; and', 'at least one anchoring recess going out from the rear-side surface, formed in an anchoring region of the silicon substrate surrounding the pressure-sensitive region;, 'a micromechanical pressure sensor, which includesan ASIC bonded in the anchoring region to a front-side surface situated opposite the rear-side surface of the micromechanical pressure sensor;a package substrate and molding compound, the micromechanical pressure sensor and the ASIC being molded in together, and the molding compound being meshed with the micromechanical pressure sensor via the anchoring recess.16. The micromechanical pressure sensor system as recited in claim 15 , wherein the micromechanical pressure sensor includes at least two anchoring recesses.17. The micromechanical pressure sensor system as recited in claim 16 ...

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Номер записи: 61
08-01-2015 дата публикации

ADAPTIVE AUTOMATIC GAIN CONTROL APPARATUS AND METHOD FOR INERTIAL SENSOR

Номер: US20150012241A1
Автор: Hwang Byoung Won, Kim Chang Hyun, Kim Kyung Rin
Принадлежит: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Disclosed herein are an adaptive automatic gain control apparatus and method for an inertial sensor. The adaptive automatic gain control apparatus for an inertial sensor, includes: a displacement measuring unit measuring and outputting a driving displacement of the inertial sensor; and a controlling unit driving the inertial sensor using an initial driving signal and then resetting a driving signal while changing a margin value using the driving displacement measured by the displacement measuring unit, thereby driving the inertial sensor. 1. An adaptive automatic gain control apparatus for an inertial sensor , comprising:a displacement measuring unit measuring and outputting a driving displacement of the inertial sensor; anda controlling unit driving the inertial sensor using an initial driving signal and then resetting a driving signal while changing a margin value using the driving displacement measured by the displacement measuring unit, thereby driving the inertial sensor.2. The adaptive automatic gain control apparatus for an inertial sensor as set forth in claim 1 , further comprising a low pass filter filtering noise from the driving displacement measured by the displacement measuring unit to provide the driving displacement from which the noise is filtered to the controlling unit.3. The adaptive automatic gain control apparatus for an inertial sensor as set forth in claim 1 , wherein the controlling unit drives the inertial sensor using the initial driving signal claim 1 , calculates a driving deviation by subtracting the driving displacement measured by the displacement measuring unit from a driving displacement target value after a predetermined time elapses claim 1 , and resets the driving signal while decreasing the margin value when the calculated driving deviation is in the range of an initial maximum margin value claim 1 , thereby driving the inertial sensor.4. The adaptive automatic gain control apparatus for an inertial sensor as set forth in claim ...

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Номер записи: 62
11-01-2018 дата публикации

Sensor with symmetrically embedded sensor elements

Номер: US20180011124A1
Автор: Jakob Schillinger, Michael SCHULMEISTER, Svenja Raukopf
Принадлежит: Continental Teves AG and Co oHG

A sensor for detecting a physical variable, including: —a sensor element for outputting an electrical signal dependent on the physical variable, —a substrate carrying the sensor element, —a printed circuit board, conducting the electrical signal, on the substrate, and —an embedding compound, in which the sensor element is completely embedded and the printed circuit board is at least partly embedded, —wherein at least one compensation element is embodied in the embedding compound, by which compensation element a mechanical stress caused by an element of the sensor at least partly embedded in the embedding compound is counteracted.

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Номер записи: 63
03-02-2022 дата публикации

ELECTRONIC DEVICE AND CORRESPONDING METHOD

Номер: US20220033251A1
Автор: Del Sarto Marco, Gritti Alex
Принадлежит: STMICROELECTRONICS S.R.L.

An electronic device comprises a “waterproof” package including a substrate of an organic material permeable to humidity and/or moisture as well as one or more electronic components arranged on the substrate. The substrate comprises a barrier layer capable of countering penetration of humidity and/or moisture into the package through the organic material substrate. 1. A device , comprising:a substrate including a surface and organic material permeable to humidity or moisture;at least one electronic component on the substrate; anda barrier layer on the surface of the substrate, the barrier layer including a material impermeable to humidity or moisture exhibits very low water absorption, near or notionally equal to zero.2. The device of claim 1 , wherein the organic material includes at least one of Bismaleimide-Triazine claim 1 , polyamide claim 1 , polytetrafluoroethylene claim 1 , or molding resin.3. The device of claim 1 , wherein the material impermeable to humidity or moisture is an organic polymeric material.4. The device of claim 1 , further comprising a cap portion covering the at least one electronic component claim 1 , the cap portion is on the substrate.5. The device of claim 4 , whereinthe cap portion is coupled to the barrier layer on the substrate by an adhesive.6. The device of claim 1 , wherein the barrier layer includes a first portion extending around the at least one electronic component and a second portion extending between the at least one electronic component and the substrate.7. The device of claim 1 , wherein the barrier layer includes a first portion extending around the at least one electronic device and a second portion extending over a periphery of the at least one electronic component.8. The device of claim 1 , comprising electrically-conductive wire bonding formations between the at least one electronic component and the substrate claim 1 , the electrically-conductive wire bonding formations having end bonds embedded in the barrier ...

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Номер записи: 64
03-02-2022 дата публикации

REDUCING DELAMINATION IN SENSOR PACKAGE.

Номер: US20220033252A1
Автор: Lacap Efren
Принадлежит:

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die. 1. A sensor , comprising:a sensor die comprising a first sensor surface and a second sensor surface opposite to the first sensor surface;a die pad component comprising a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface; anda lead frame component comprising a first frame surface and a second frame surface opposite to the first frame surface, wherein the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, wherein the second pad surface is isolated from the second frame surface, and wherein the lead frame component is electrically connected to the sensor die.2. The sensor of claim 1 , wherein the second pad surface is isolated from the second frame surface based on being at least partially encapsulated in a molding compound.3. The sensor of claim 1 , wherein the second pad surface is isolated from the second frame surface based on the second pad surface not being exposed outside ...

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Номер записи: 65
03-02-2022 дата публикации

MEMS PACKAGE WITH SHOCK AND VIBRATION PROTECTION

Номер: US20220033253A1
Автор: Jiang Henghui, Pan Anan, Wang Youmin
Принадлежит:

An optical micro-electromechanical system (MEMS) system is disclosed. The optical MEMS system includes a printed circuit board (PCB), and a MEMS optical integrated circuit (IC) package mounted to the PCB. The IC package includes a MEMS optical die, and a plurality of leads electrically and mechanically connected to the MEMS optical die and to the PCB. The optical MEMS system also includes one or more elastomeric grommets contacting one or more of the leads, where the grommets are configured to absorb mechanical vibration energy from the contacted leads. 1. An optical micro-electromechanical system (MEMS) system , comprising:a printed circuit board (PCB); a MEMS optical die, and', 'a plurality of leads electrically and mechanically connected to the MEMS optical die and to the PCB;, 'a MEMS optical integrated circuit (IC) package mounted to the PCB, the IC package comprisingone or more elastomeric grommets contacting one or more of the leads, wherein the grommets are configured to absorb mechanical vibration energy from the contacted leads.2. The optical MEMS package of claim 1 , wherein the grommets further contact the IC package and the PCB claim 1 , and wherein the grommets are further configured to absorb mechanical vibration energy from the IC package and the PCB.3. The optical MEMS package of claim 1 , wherein at least one of the grommets contacts a plurality of leads.4. The optical MEMS package of claim 1 , wherein at least one of the grommets comprises one or more holes claim 1 , wherein each hole surrounds one of the leads.5. The optical MEMS package of claim 1 , further comprising an elastomeric pad contacting the IC package and the PCB claim 1 , wherein the pad is configured to absorb mechanical vibration energy from the IC package and the PCB.6. The optical MEMS package of claim 5 , wherein the grommets are spaced apart from the pad.7. The optical MEMS package of claim 5 , wherein the grommets contact the pad.8. The optical MEMS package of claim 5 , ...

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Номер записи: 66
03-02-2022 дата публикации

MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR

Номер: US20220033255A1
Автор: GOGOI BISHNU PRASANNA
Принадлежит: Versana Micro Inc.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor. 1. A monolithically integrated multi-sensor (MIMS) having three or more sensors the MIMS comprising:a first MEMS sensor configured to measure a first parameter;a second MEMS sensor configured to measure a second parameter;a third sensor configured to measure a third parameter wherein the first, second, and third parameters are different, wherein the first, second, and third sensors are formed on or in a single semiconductor substrate using a monolithic semiconductor process, and wherein the a layer of the monolithic semiconductor process is common to the first, second, and third sensors.2. The MIMS of wherein the layer forms a static structural component in at least one of the first claim 1 , second claim 1 , or third sensors and wherein the layer forms a dynamic structural component in at least one of the first claim 1 , second claim 1 , or third sensors.3. The MIMS of wherein the layer is configured to form one or more pillars or one or more walls to support the static structural components for improved mechanical strength.4. The MIMS of wherein the dynamic structural component is a proof mass or a suspension spring.5 ...

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Номер записи: 67
19-01-2017 дата публикации

RELEASE CHEMICAL PROTECTION FOR INTEGRATED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) AND MICRO-ELECTRO-MECHANICAL (MEMS) DEVICES

Номер: US20170015547A1
Автор: Assaderaghi Fariborz, DANEMAN Michael J.
Принадлежит:

Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical. 1. A method , comprising:creating an opening in a passivation layer of a integrated circuit substrate, wherein a sidewall of the opening exposes a dielectric layer of the integrated circuit substrate; anddepositing a barrier layer on the sidewall to protect the dielectric layer from a release chemical employable to release a micro-electro-mechanical (MEMS) device integrated with the integrated circuit substrate, wherein the barrier layer comprises a metal.2. The method of claim 1 , wherein the depositing comprises depositing the metal on the integrated circuit substrate and patterning the metal to leave a portion of the metal that forms the barrier layer on the sidewall.3. The method of claim 2 , wherein the depositing the metal comprises depositing at least one of Aluminum claim 2 , Aluminum-Copper claim 2 , Titanium claim 2 , or Titanium Nitride.4. The method of claim 1 , further comprising:exposing the MEMS device integrated with the integrated circuit substrate to the release chemical, wherein the exposing facilitates a removal of a sacrificial layer of the MEMS device.5. The method of claim 4 , wherein the exposing comprises exposing the MEMS device to at least one of ...

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Номер записи: 68
19-01-2017 дата публикации

OPEN CAVITY PACKAGE USING CHIP-EMBEDDING TECHNOLOGY

Номер: US20170015548A1
Автор: Mao Jie, Nguyen Hau, Nguyen Luu, Poddar Anindya
Принадлежит:

A method for fabricating packaged semiconductor devices () with an open cavity () in panel format; placing (process ) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad () and symmetrically placed vertical pillars (); attaching (process ) semiconductor chips () with sensor systems face-down onto the tape; laminating (process ) and thinning (process ) low CTE insulating material () to fill gaps between chips and grid; turning over (process ) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process ) uniform metal layer across assembly and optionally plating (process ) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process ) insulating stiffener across panel; opening (process ) cavities in stiffener to access the sensor system; and singulating (process ) packaged devices by cutting metallic pieces. 1. A method for fabricating packaged semiconductor devices comprising:providing semiconductor chips, each semiconductor chip having a first height and a first surface including a sensor system, terminals, and sidewalls;providing metallic pieces, having a second height greater than the first height, each metallic piece comprising a flat pad having vertical pillars on the flat pad positioned symmetrically relative to a center of the flat pad a flat pad surface opposite the vertical pillars being solderable;placing the vertical pillars on an adhesive carrier tape to form a grid of metallic pieces, the metallic pieces spaced by openings;placing each semiconductor chip inside each opening, each semiconductor chip having the sensor system and the terminals facing downward and the sidewalls spaced by gaps from a sidewall of an adjacent metallic piece;laminating, using an insulating polymer to fill the gaps between each semiconductor chip and the sidewall of the adjacent metallic piece, and to cover a second surface of the semiconductor chip facing away from the ...

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Номер записи: 69
21-01-2016 дата публикации

Miniaturized Component and Method for the Production Thereof

Номер: US20160016790A1
Автор: Marksteiner Stephan
Принадлежит:

An encapsulated component and a method for producing an encapsulated component are specified. The component includes a carrier substrate, a functional structure, a thin-film cover and a reinforcement layer comprising glass. The carrier substrate, the thin-film cover and the reinforcement layer together enclose a cavity around at least parts of the functional structure.

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Номер записи: 70
18-01-2018 дата публикации

BOTTOM PACKAGE EXPOSED DIE MEMS PRESSURE SENSOR INTEGRATED CIRCUIT PACKAGE DESIGN

Номер: US20180016133A1
Автор: ANTILANO, ARELLANO Frederick, CADAG Aaron, JR. Ernesto
Принадлежит:

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound. 19.-. (canceled)10. A package containing a MEMS sensor circuit , comprising:a lead frame having an open region in a middle of the lead frame and a first surface exposed to an ambient atmosphere;a MEMS semiconductor die being laterally adjacent to the lead frame, the MEMS semiconductor die having an exposed outer surface thereof exposed to the ambient atmosphere, the exposed outer surface having a plurality of apertures, the plurality of apertures exposing an internal chamber of the MEMS semiconductor die to the ambient atmosphere;a second semiconductor die attached to the MEMS semiconductor die;a first plurality of bonding wires connected between the lead frame and the second semiconductor die;a second plurality of bonding wires connected at least between one of the lead frame and the MEMS semiconductor die or the MEMS semiconductor die and the second semiconductor die; anda molding compound partially covering the MEMS semiconductor die and the lead frame and ...

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Номер записи: 71
18-01-2018 дата публикации

MODULE COMPRISING A MEMS COMPONENT MOUNTED WITHOUT SUBJECTING SAME TO STRESS

Номер: US20180016134A1
Автор: Rombach Pirmin Hermann Otto
Принадлежит:

A model is specified in which a MEMS component is connected to the carrier in a stress-free fashion over a large temperature range. For this purpose, a mechanical connection comprises a compensation structure which bridges a horizontal offset of mounting points by means of a horizontal shoulder and the thermal expansion coefficient of which is suitably selected. 2. The module according to claim 1 , wherein{'sub': 2', '1, 'the compensation structure bridges the distance Δd=d−dalong the connecting direction between the two second mounting points, and'}{'sub': 2', '1', 'K', '1', 'K', '2, 'the equation d=d(K−K)/(K−K) is satisfied.'}3. The module according to claim 1 , wherein K{'sub': 1', '2', 'K', '1', '2, 'is either larger than the larger of the two values Kand K: K>max (K, K) or'}{'sub': 1', '2', 'K', '1', '2, 'smaller than the smaller of the two values Kand K: K Подробнее

Номер записи: 72
18-01-2018 дата публикации

TWO DIFFERENT CONDUCTIVE BUMP STOPS ON CMOS-MEMS BONDED STRUCTURE

Номер: US20180016135A1
Автор: Huang Jeff, Lee Daesung, Lee Ki Young
Принадлежит:

Provided herein is a method including forming a micro-electro-mechanical system (“MEMS”) wafer including a first MEMS device and a second MEMS device. A complementary metal-oxide semiconductor (“CMOS”) wafer is formed including a first electrically conductive via and a second electrically conductive via. A layer stack including a first conductive layer, a second conductive layer, and a bond layer is deposited over the first electrically conductive via and the second electrically conductive via. The layer stack is etched to define a first standoff, a second standoff, a third standoff, a first bump stop over the first electrically conductive via, and a second bump stop over the second electrically conductive via. The first bump stop and the second bump stop are etched to remove the bond layer. The first bump stop is further etched to remove the second conductive layer. The MEMS wafer is bonded to the CMOS wafer. 1. A method comprising:forming a micro-electro-mechanical system (“MEMS”) wafer including a first MEMS device and a second MEMS device;forming a complementary metal-oxide semiconductor (“CMOS”) wafer including a first electrically conductive via and a second electrically conductive via;depositing a layer stack including a first conductive layer, a second conductive layer, and a bond layer over the first electrically conductive via and the second electrically conductive via;etching the layer stack to define a first standoff, a second standoff, a third standoff, a first bump stop over the first electrically conductive via, and a second bump stop over the second electrically conductive via;etching the first bump stop and the second bump stop to remove the bond layer;further etching the first bump stop to remove the second conductive layer; andbonding the MEMS wafer to the CMOS wafer.2. The method of claim 1 , further comprising depositing a photoresist over the first standoff claim 1 , the second standoff claim 1 , and the third standoff claim 1 , prior to the ...

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Номер записи: 73
17-01-2019 дата публикации

ACTUATOR DEVICE

Номер: US20190016589A1
Автор: MORINAGA Yuki, SUZUKI Daiki, Takimoto Sadaharu, Warashina Yoshihisa
Принадлежит: HAMAMATSU PHOTONICS K.K.

An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening. 1. An actuator device comprising:a support portion;a movable portion;a connection portion which connects the movable portion to the support portion on a predetermined axis so that the movable portion is swingable about the axis;a first wiring which is provided on the connection portion;a second wiring which is provided on the support portion; andan insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one wiring of the first wiring and the second wiring and covers a corner of the first connection part,wherein rigidity of a first metal material forming the first wiring is higher than rigidity of a second metal material forming the second wiring, andwherein the other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.2. The actuator device according to claim 1 ,wherein the first connection part is separate from the axis by a predetermined distance.3. The actuator device according to claim 2 ,wherein the distance is larger than ½ times a minimum width of the connection portion.4 ...

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Номер записи: 74
21-01-2021 дата публикации

SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20210017018A1
Автор: Lai Lu-Ming, Liu Wei-wei, WONG Huei-Siang
Принадлежит: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

A semiconductor package structure includes an electronic device having an exposed region adjacent to a first surface, a dam surrounding the exposed region of the semiconductor die and disposed on the first surface, the dam having a top surface away from the first surface, an encapsulant encapsulating the first surface of the electronic device, exposing the exposed region of the electronic device. A surface of the dam is retracted from a top surface of the encapsulant. A method for manufacturing the semiconductor package structure is also provided. 1. A semiconductor package structure , comprising:an electronic device having an exposed region adjacent to a first surface;a dam surrounding the exposed region of the electronic device and disposed on the first surface, the dam comprising a top surface away from the first surface; andan encapsulant encapsulating the first surface of the electronic device, exposing the exposed region of the electronic device,wherein a surface of the dam is retracted from a top surface of the encapsulant.2. The semiconductor package structure of claim 1 , wherein the exposed region comprises a movable part.3. The semiconductor package structure of claim 3 , wherein the movable part comprises a membrane.4. The semiconductor package structure of claim 1 , further comprising a conductive terminal on the first surface claim 1 , electrically connected to the exposed region.5. The semiconductor package structure of claim 1 , wherein the exposed region comprises a circular shape from a top view perspective.6. The semiconductor package structure of claim 6 , wherein the dam comprises a circular shape from a top view perspective.7. The semiconductor package structure of claim 1 , wherein the dam is free from projecting over the exposed region.8. (canceled)9. (canceled)10. (canceled)11. A semiconductor package structure claim 1 , comprising:an electronic device having an exposed region adjacent to a first surface; anda dam surrounding the exposed ...

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Номер записи: 75
19-01-2017 дата публикации

Physical Quantity Sensor

Номер: US20170018471A1
Автор: Aono Takanori, ISOBE Atsushi, KAMADA Yuudai, SEKIGUCHI Tomonori, SHIOTA Takashi
Принадлежит:

To provide a physical quantity sensor in which the influence of deformation of a package substrate on the measuring accuracy of a sensor element can be suppressed. A physical quantity sensor includes a sensor element that detects a predetermined physical quantity and outputs an electrical signal, a plurality of lead portions that are connected to the sensor element, and a package substrate that accommodates the sensor element and the plurality of lead portions. The plurality of lead portions are connected at proximal end sides thereof to the package substrate side, and connected at distal end sides thereof to the sensor element side, and the plurality of lead portions support the sensor element in such a manner that the sensor element does not contact the package substrate and that the transmission of deformation of the package substrate side to the sensor element is suppressed. 1. A physical quantity sensor that measures a physical quantity , comprising:a sensor element, that detects a predetermined physical quantity and outputs an electrical signal;a plurality of lead portions that are connected to the sensor element; anda package substrate that accommodates the sensor element and the plurality of lead portions, whereinthe plurality of lead portions are connected at proximal end sides thereof to the package substrate side, and connected at distal end sides thereof to the sensor element side, andthe plurality of lead portions support the sensor element in such a manner that the sensor element does not contact the package substrate and that the transmission of deformation of the package substrate side to the sensor element is suppressed.2. The physical quantity sensor according to claim 1 , whereinthe package substrate has a hermetic structure, and a gas damper is formed in a gap between the sensor element and the package substrate due to a gas enclosed in the package substrate.3. The physical quantity sensor according to claim 2 , whereinthe plurality of lead ...

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Номер записи: 76
17-01-2019 дата публикации

Dual-laser chip-scale lidar for simultaneous range-doppler sensing

Номер: US20190018110A1
Автор: Keyvan Sayyah, Richard Kremer
Принадлежит: GM GLOBAL TECHNOLOGY OPERATIONS LLC

A chip-scale lidar system includes a first light source to output a first signal, and a second light source to output a second signal. A transmit beam coupler provides an output signal for transmission that includes a portion of the first signal and a portion of the second signal, and receive beam coupler obtains a received signal resulting from reflection of the output signal by a target. The system includes a first and second set of photodetectors to obtain a first and second set of electrical currents from a first and second set of combined signals including a first and second portion of the received signal. A processor obtains Doppler information about the target from the second set of electrical currents and obtains range information about the target from the first set of electrical currents and the second set of electrical currents.

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Номер записи: 77
17-01-2019 дата публикации

CHIP-SCALE LIDAR WITH A SINGLE 2D MEMS SCANNER

Номер: US20190018113A1
Автор: Efimov Oleg, Hammon David, Huang Biqin, Patterson Pamela R., Sarkissian Raymond, Sayyah Keyvan, SCHAFFNER James H.
Принадлежит:

A LIDAR system, LIDAR chip and method of manufacturing a LIDAR chip. The LIDAR system includes a photonic chip configured to transmit a transmitted light beam and to receive a reflected light beam, a scanner for directing the transmitted light beam towards a direction in space and receiving the reflected light beam from the selected direction, and a fiber-based optical coupler. The photonic chip and the scanner are placed on a semiconductor integrated platform (SIP). The fiber-based optical coupler is placed on top of the photonic chip to optically couple to the photonic chip for directing the a transmitted light beam from the photonic chip to the scanner and for directing a reflected light beam from the scanner to the photonic chip. 1. A LIDAR system , comprising:a photonic chip configured to transmit a light beam and to receive a reflected light beam;a scanner for directing the transmitted light beam towards a direction in space and receiving the reflected light beam from the selected direction; anda fiber-based optical coupler for directing the transmitted light from the photonic chip to the scanner and for directing the reflected light from the scanner to the photonic chip.2. The LIDAR system of claim 1 , wherein the fiber-based optical coupler further comprises a fiber-based circulator and a fiber-based collimator.3. The LIDAR system of claim 2 , further comprising a first optical fiber for optical communication of the transmitted light beam from the photonic chip to the fiber-based circulator and a second optical fiber for optical communication of the reflected light beam from the fiber-based circulator to the photonic chip.4. The LIDAR system of claim 3 , wherein the photonic chip further comprises a transmitter beam edge or grating coupler aligned with the first optical fiber from transmitting the transmitted light beam to the fiber-based circulator and a receiver beam edge or grating coupler aligned with the second optical fiber for transmitting the ...

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Номер записи: 78
16-01-2020 дата публикации

BOTTOM PACKAGE EXPOSED DIE MEMS PRESSURE SENSOR INTEGRATED CIRCUIT PACKAGE DESIGN

Номер: US20200020616A1
Автор: ANTILANO, ARELLANO Frederick, CADAG Aaron, JR. Ernesto
Принадлежит:

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound. 1. A method comprising:placing a lead frame on a first side of a lead frame tape;placing a MEMS semiconductor die on the first side of the lead frame tape, adjacent to the lead frame, the MEMS semiconductor die having an internal chamber, apertures, and a sensing component inside the internal chamber, the apertures facing the lead frame tape;attaching a second semiconductor die to the MEMS semiconductor die;attaching a first plurality of bonding wires having a first end connected to the MEMS semiconductor die and a second end connected to the second semiconductor die;attaching a second plurality of bonding wires having a first end connected to the lead frame and a second end connected to at least one of the second semiconductor die or the MEMS semiconductor die;forming a molding compound that partially covers the MEMS semiconductor die and the lead frame and fully encapsulates the second semiconductor die and the first and second pluralities of bonding wires; ...

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Номер записи: 79
26-01-2017 дата публикации

MEMS COMPONENT INCLUDING A SOUND-PRESSURE-SENSITIVE DIAPHRAGM ELEMENT

Номер: US20170022046A1
Автор: Buck Thomas, Purkl Fabian, Scheben Rolf, SCHELLING Christoph, STEIN Benedikt, Stumber Michael
Принадлежит:

A MEMS microphone component including at least one sound-pressure-sensitive diaphragm element is formed in the layer structure of the MEMS component, which spans an opening in the layer structure. The diaphragm element is attached via at least one column element in the central area of the opening to the layer structure of the component. The deflections of the diaphragm element are detected with the aid of at least one piezosensitive circuit element, which is implemented in the layer structure of the diaphragm element and is situated in the area of the attachment of the diaphragm element to the column element. 1. A MEMS component , comprising:a layer structure;at least one sound-pressure-sensitive diaphragm element formed in the layer structure, the diaphragm element spanning an opening in the layer structure and being attached to the layer structure of the component via at least one column element in a central area of the opening;at least one piezosensitive circuit element to detect deflections of the diaphragm element, the piezosensitive element implemented in the layer structure of the diaphragm element and being situated in an area of the attachment of the diaphragm element to the column element.2. The MEMS component as recited in claim 1 , wherein the column element situated essentially at least one of centrally or eccentrically in the opening and with respect to the diaphragm area.3. The MEMS component as recited in claim 1 , wherein the diaphragm element extends on all sides at least up to an edge of the opening in the layer structure.4. The MEMS component as recited in claim 1 , wherein the diaphragm element includes multiple paddle-like diaphragm elements claim 1 , which are each connected at one end to the column element and extend therefrom at least up to the edge of the opening in the layer structure.5. The MEMS component as recited in claim 4 , wherein the opening includes multiple partial openings claim 4 , which are each spanned by one paddle-like ...

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Номер записи: 80
26-01-2017 дата публикации

MICRO-ELECTRO MECHANICAL SYSTEM (MEMS) STRUCTURES WITH THROUGH SUBSTRATE VIAS AND METHODS OF FORMING THE SAME

Номер: US20170022049A1
Автор: Chang Kuei-Sung, Chu Chia-Hua, Lee Te-Hao
Принадлежит:

The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures. 1. A method of forming a micro-electro mechanical system (MEMS) structure , the method comprising:providing a first substrate structure having a first layer with a first silicon surface;providing a second substrate having a second layer with a second silicon surface;bonding the second substrate structure to the first substrate structure using fusion bonding, wherein the bonding forms a fusion bonding interface between the first and second silicon surfaces, wherein the second substrate structure includes at least one micro-electro mechanical system (MEMS) device, and wherein there is at least one cavity surrounding at least a portion of the MEMS device; andforming a through silicon via (TSV) in the first substrate structure and through the bonding interface between the first substrate and the second substrate such that a conductive layer of the TSV extends through the bonding interface.2. The method of claim 1 , further comprising:forming at least one integrated circuit component on the first substrate prior to the bonding.3. The method of claim 1 , wherein the bonding is performed at a temperature between about 500 Celsius and 1200 Celsius.4. The method of claim 1 , further comprising:thinning the first substrate.5. The method of claim 1 , ...

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Номер записи: 81
26-01-2017 дата публикации

HERMETIC ENCAPSULATION FOR MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES

Номер: US20170022050A1
Автор: EID Feras, Haney Sarah K., Oster Sasha N., TEH Weng Hong
Принадлежит:

Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects. 1. An apparatus comprising: a magnet;', 'a first laminate organic dielectric film;', 'a first hermetic coating disposed over a portion of the substrate stack;', 'a second laminate organic dielectric film disposed on the first hermetic coating;', 'a MEMS device layer disposed over the magnet; and', 'a plurality of metal interconnects surrounding the MEMS device layer; and, 'a microelectromechanical systems (MEMS) substrate stack comprisinga hermetic plate bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer; the set of metal interconnects; or', 'a second hermetic coating deposited onto the set of metal interconnects., 'wherein the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of2. The apparatus of claim 1 , wherein the hermetically encapsulated cavity is further formed from the set of metal interconnects claim 1 , and the MEMS substrate stack further ...

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Номер записи: 82
26-01-2017 дата публикации

STRESS ISOLATION FEATURES FOR STACKED DIES

Номер: US20170022051A1
Автор: "ODonnell Kathleen O.", Goida Thomas M., Xue Xiaojie, Zylinski Michael J.
Принадлежит:

An integrated device package is disclosed. The package can include a carrier, such as first integrated device die, and a second integrated device die stacked on the first integrated device die. The package can include a buffer layer which coats at least a portion of an exterior surface of the first integrated device die and which is disposed between the second integrated device die and the first integrated device die. The buffer layer can comprise a pattern to reduce transmission of stresses between the first integrated device die and the second integrated device die. 1. An integrated device package comprising:a carrier;an integrated device die mounted to the carrier;a buffer layer disposed between the integrated device die and the carrier, the buffer layer comprising a pattern to reduce transmission of stresses between the carrier and the integrated device die, the pattern defined such that there is a gap between a portion of the integrated device die and a portion of the buffer layer.2. The package of claim 1 , wherein the buffer layer coats at least a portion of an exterior surface of the carrier.3. (canceled)4. The package of claim 1 , wherein the carrier comprises an additional integrated device die.5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. The package of claim 1 , wherein the pattern comprises a base region on the exterior surface of the carrier and one or more protrusions extending from the base region towards the integrated device die claim 1 , the one or more protrusions covering less than all of an exterior surface of the integrated device die.10. (canceled)11. The package of claim 1 , wherein the buffer layer comprises a polymer.12. The package of claim 11 , wherein the buffer layer comprises polyimide.13. The package of claim 1 , wherein the buffer layer is patterned such that the gap is disposed between corner regions of the integrated device die and the buffer layer.14. The package of claim 1 , wherein the integrated device die comprises a ...

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Номер записи: 83
25-01-2018 дата публикации

METHOD FOR PRODUCING A SEMICONDUCTOR MODULE

Номер: US20180022601A1
Автор: Fuergut Edward, Goller Bernd, Ledutke Michael, Maier Dominic, Waechter Claus
Принадлежит: INFINEON TECHNOLOGIES AG

The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules. 1. A method for producing a semiconductor module , the method comprising:fabricating a semiconductor panel comprising a plurality of semiconductor devices;fabricating a cap panel comprising a plurality of caps;bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices; andsingulating the bonded panels into a plurality of semiconductor modules.2. The method according to claim 1 , further comprising:fabricating the cap panel comprises forming.3. The method according to claim 2 , whereinfabricating the cap panel comprises molding.4. The method according to claim 1 , whereineach one of the semiconductor devices comprises a sensor device.5. The method according to claim 4 , whereineach one of the semiconductor devices comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor.6. The method according to claim 1 , whereineach one of the semiconductor devices comprises a MEMS device.7. The method according to claim 1 , whereinthe semiconductor panel is a reconfigured wafer obtained by processing a plurality of semiconductor chips in a semiconductor wafer, dicing out the semiconductor chips, and embedding the semiconductor chips in an encapsulant.8. The method according to claim 1 , further comprising:fabricating the cap panel comprises providing the caps or portions thereof with an electrical conductivity.9. A semiconductor module claim 1 , comprising:a semiconductor device;anda cap disposed above ...

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Номер записи: 84
25-01-2018 дата публикации

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

Номер: US20180022602A1
Автор: CHEN Hsiang-Fu, HSIEH Yuan-Chih, Huang Hsin-Ting, HUNG Chia-Ming, LIN Hung-Hua, TAI Wen-Chuan, Yu Shao-Chi
Принадлежит:

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing. 1. A method of forming a semiconductor arrangement , comprising:patterning an oxide layer to form a first oxide structure over a first metal connect and a second oxide structure over a second metal connect;forming a first opening through the first oxide structure to expose a top surface of the first metal connect and a second opening through the second oxide structure to expose a top surface of the second metal connect; the metal layer is in contact with the top surface of the first metal connect through the first opening, and', 'the metal layer is in contact with the top surface of the second metal connect through the second opening;, 'forming a metal layer over the first oxide structure, over the second oxide structure, in the first opening, in the second opening, and in a micro electro-mechanical system (MEMS) area between the first oxide structure and the second oxide structure, whereinremoving the metal layer from the MEMS area; andbonding a wafer comprising a MEMS device over the metal layer such that the MEMS device is disposed in the MEMS area.2. The method of claim 1 , comprising:forming a third opening through the wafer on ...

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Номер записи: 85
21-01-2021 дата публикации

INTEGRATED STRUCTURE OF MEMS MICROPHONE AND AIR PRESSURE SENSOR AND FABRICATION METHOD THEREOF

Номер: US20210021937A1
Автор: Fang Huabin, Song Qinglin, Wang Dexin
Принадлежит: Weifang Goertek Microelectronics Co., Ltd.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption. 1. An integrated structure of a MEMS microphone and an air pressure sensor , comprising:a base substrate;a vibrating membrane, a back electrode, an upper electrode, a lower electrode formed on the base substrate, and a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode;a first integrated circuit electrically connected to the vibrating membrane and the back electrode, respectively; anda second integrated circuit electrically connected to the lower electrode and the upper electrode, respectively;wherein a back cavity is formed in a region of the base substrate corresponding to the vibrating membrane, the ...

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Номер записи: 86
10-02-2022 дата публикации

Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

Номер: US20220041434A1
Автор: Bishnu Prasanna Gogoi
Принадлежит: Versana Micro Inc

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

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Номер записи: 87
23-01-2020 дата публикации

ROUGH LAYER FOR BETTER ANTI-STICTION DEPOSITION

Номер: US20200024125A1
Автор: Chang Chih-Hang, Liu Jen-Hao, WANG I-Shi
Принадлежит:

A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided. 1. A method for manufacturing a microelectromechanical systems (MEMS) package , the method comprising:forming a thermal oxide layer on a surface of a device substrate, wherein the forming of the thermal oxide layer roughens the surface of the device substrate;performing an etch into the thermal oxide layer to form an opening partially exposing the surface of the device substrate;forming an anti-stiction layer lining the partially-exposed surface of the device substrate; andbonding the device substrate to a support device through the thermal oxide layer to seal a cavity overlying the support device.2. The method according to claim 1 , wherein the thermal oxide layer is formed on an opposite side of the device substrate as a capping device claim 1 , and wherein the method further comprises:performing a second etch into the device substrate, through the opening, to form a movable element in the device substrate, wherein the movable element comprises a rough surface.3. The method according to claim 1 , further comprising:bonding the device substrate to a capping device with a recess of the capping device arranged between the device substrate and the capping device.4. The method according to claim 3 , further comprising:performing a second etch into the capping device to form the recess using a photolithography mask, wherein the etch is performed into the thermal oxide layer using the photolithography mask.5. The method according ...

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Номер записи: 88
23-01-2020 дата публикации

NICKEL LANTHANIDE ALLOYS FOR MEMS PACKAGING APPLICATIONS

Номер: US20200024130A1
Автор: Dadvand Nazila, SCHUCK Kathryn
Принадлежит:

A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer. 1. A semiconductor package comprising:a semiconductor die; andat least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy layer abutting a gold layer.2. The semiconductor package of claim 1 , wherein the at least one bondline further comprises at least one other bondline layer claim 1 , wherein the nickel lanthanide alloy layer does not alloy with the at least one other bondline layer.3. The semiconductor package of claim 2 , wherein the at least one other bondline layer comprises indium claim 2 , a seed metal claim 2 , a base metal claim 2 , or a combination thereof.4. The semiconductor package of claim 3 , wherein the base metal comprises copper claim 3 , and wherein the seed metal comprises titanium claim 3 , or both.5. The semiconductor package of claim 1 , wherein the semiconductor die comprises a complementary metal-oxide semiconductor (CMOS).6. A Micro-Electro-Mechanical System (MEMS) package claim 1 , comprising:a semiconductor wafer;a substrate spaced apart from the semiconductor wafer; anda bondline positioned between and in contact with the semiconductor wafer and the substrate, the bondline comprising a nickel lanthanide alloy layer and a gold layer.7. The MEMS package of claim 6 , wherein the substrate comprises a semiconductor wafer.8. The MEMS package of further comprising indium incorporated into the bondline as an interlayer element for transient liquid phase bonding between the gold and the indium.9. The MEMS package of claim 6 , wherein the lanthanide comprises cerium claim 6 , lanthanum claim 6 , erbium claim 6 , or a combination thereof.10. The MEMS package of claim 6 , wherein the gold layer has a thickness in a range of from about 0.1 μm to about 20 μm.11. The ...

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Номер записи: 89
23-01-2020 дата публикации

MICRO-ELECTRO-MECHANICAL DEVICE AND MANUFACTURING PROCESS THEREOF

Номер: US20200024132A1
Автор: Baldo Lorenzo, DUQI Enri, Villa Flavio Francesco
Принадлежит:

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body. 118.-. (canceled)19. A method , comprising:forming a first buried cavity in a monolithic body of semiconductor material; andforming a sensitive region in the monolithic body facing the first buried cavity, wherein forming the sensitive region includes forming a single trench that extends into the monolithic body as far as the first buried cavity, the single trench extending around the sensitive regions so that a first end of the single trench overlaps a second end of the single trench.20. The method of claim 19 , further comprising forming a second buried cavity in the sensitive region claim 19 , the second buried cavity overlapping the first buried cavity.21. The method of claim 19 , further comprising coupling a perimeter of a membrane to the sensitive region claim 19 , the membrane being arranged over the sensitive region.22. The method of claim 21 , wherein the membrane is spaced apart from the sensitive region by a cavity.23. The method of claim 19 , further comprising coupling a cap element to a surface of the peripheral portion of the monolithic body.24. The method of claim 19 , wherein the single trench has a spiral shape that extends around an entire perimeter of the sensitive region.25. The method of claim 24 , wherein the single trench has a first end portion and a second end portion claim 24 , the first end portion and the second end portion extending along a same side of the sensitive region.26. A method claim 24 , comprising:forming a buried cavity in a monolithic body ...

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Номер записи: 90
23-01-2020 дата публикации

METHOD FOR MANUFACTURING A MEMS UNIT FOR A MICROMECHANICAL PRESSURE SENSOR

Номер: US20200024133A1
Автор: DANNENBERG Arne, Friedrich Thomas, Fritz Joachim, Kramer Torsten
Принадлежит:

A method for manufacturing a MEMS unit for a micromechanical pressure sensor. The method includes the steps: providing a MEMS wafer including a silicon substrate and a first cavity formed therein, under a sensor membrane; applying a layered protective element on the MEMS water; and exposing a sensor core from the back side, a second cavity being formed between the sensor core and the surface of the silicon substrate, and the second cavity being formed with the aid of an etching process which is carried out with the aid of etching parameters changed in a defined manner; and removing the layered protective element. 111-. (canceled)12. A method for manufacturing a MEMS unit for a micromechanical pressure sensor , comprising:providing a MEMS wafer including a silicon substrate and a first cavity formed in the silicon substrate, under a sensor membrane;applying a layered protective element on the MEMS wafer;exposing a sensor core from a back side, a second cavity being formed between the sensor core and a surface of the silicon substrate, and the second cavity being formed with the aid of an etching process which is carried out with the aid of etching parameters changed in a defined manner, the etching process, to form the second cavity, being a reactive ion deep etching process having an anisotropic beginning and a continuation which is isotropic in a defined manner; andremoving the layered protective element.13. The method as recited in claim 12 , wherein the layered protective element is a varnish or a foil.14. The method as recited in claim 12 , wherein claim 12 , in order to form the second cavity with the aid of a vertical etching process claim 12 , access openings are produced in the silicon substrate claim 12 , the vertical etching process being changed into a lateral etching process claim 12 , spherical etch fronts coalescing as a result of a lateral etching process.15. The method as recited in claim 12 , wherein claim 12 , after the reactive ion deep etching ...

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Номер записи: 91
23-01-2020 дата публикации

WAFER LEVEL INTEGRATED MEMS DEVICE ENABLED BY SILICON PILLAR AND SMART CAP

Номер: US20200024136A1
Автор: CHEN Hsiang-Fu, Chou Cheng San, Hu Fan, LEE Yi-Chia, Lin Chin-Min, Shen Ching-Kai, TAI Wen-Chuan, Wu Hua-Shu Ivan
Принадлежит:

The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity. 1. A micro-electro mechanical system (MEMS) package , comprising:a device substrate comprising a first MEMS device and a second MEMS device;a capping substrate bonded to the device substrate, the capping substrate comprising a first recessed region defining an upper portion of a first cavity associated with the first MEMS device and a second recessed region defining an upper portion of a second cavity associated with the second MEMS device;a ventilation trench laterally spaced apart from the second recessed region; a lining structure defining a vent in fluid communication with the second cavity; and', 'a cap arranged within the vent and configured to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity., 'a sealing structure arranged within the ventilation trench and comprising2. The MEMS package of claim 1 , wherein the vent extends from a height above an uppermost extent of the recessed regions to a lower surface of the capping substrate claim 1 , and is configured to be sealed by the cap at an upper surface of the capping substrate.3. The MEMS package of wherein the capping substrate is configured to be bonded to the device substrate in a wafer to wafer bonding process.4. The MEMS package of ...

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Номер записи: 92
23-01-2020 дата публикации

WAFER LEVEL INTEGRATED MEMS DEVICE ENABLED BY SILICON PILLAR AND SMART CAP

Номер: US20200024137A1
Автор: CHEN Hsiang-Fu, Chou Cheng San, Hu Fan, LEE Yi-Chia, Lin Chin-Min, Shen Ching-Kai, TAI Wen-Chuan, Wu Hua-Shu Ivan
Принадлежит:

The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity. 1. A method of forming a micro-electro mechanical system (MEMS) structure , comprising:forming a ventilation trench and an isolation trench concurrently within a capping substrate, wherein the isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench;forming a sealing structure within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench;providing a device substrate comprising a first MEMS device and a second MEMS device;bonding the device substrate to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with the first MEMS device and a second cavity associated with the second MEMS device, wherein the second cavity is in fluid communication with the vent; andthinning the capping substrate to open the vent and adjusting a gas pressure of the second cavity to a second gas pressure different than the first gas pressure.2. The method of claim 1 , ...

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Номер записи: 93
28-01-2021 дата публикации

MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING A MECHANICALLY ROBUST ANTI-STICTION/OUTGASSING STRUCTURE

Номер: US20210024348A1
Автор: Chang Kuei-Sung, Cheng Chun-Wen, HSIEH Yuan-Chih, Lai Fei-Lung, Pan Shing-Chyang, Wang Yi-Ren
Принадлежит:

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor. 1. A microelectromechanical system (MEMS) device , comprising:a dielectric structure disposed over a first semiconductor substrate, wherein the dielectric structure at least partially defines a cavity;a second semiconductor substrate disposed over the dielectric structure and comprising a movable mass, wherein opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity; andan anti-stiction structure disposed between the movable mass and the dielectric structure, wherein the anti-stiction structure is a first silicon-based semiconductor.2. The MEMS device of claim 1 , further comprising:an interconnect structure disposed in the dielectric structure, wherein the anti-stiction structure is electrically coupled to the interconnect structure.3. The MEMS device of claim 1 , wherein an electrical resistivity of the anti-stiction structure is between about 0.5 milliohm-centimeter (mΩ·cm) and about 100 ohm-centimeter (Ω·cm).4. The MEMS device of claim 1 , wherein the anti-stiction structure comprises one or more outgassing species.5. The MEMS device of claim 1 , further comprising:a first electrode disposed between the movable mass and the dielectric structure, wherein the first electrode comprises a first chemical composition and the anti-stiction structure comprises a second ...

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Номер записи: 94
24-04-2014 дата публикации

Wafer-Level Package and Method for Production Thereof

Номер: US20140111062A1
Автор: Alois Stelzl, Christian Bauer, Hans Krueger, Juergen Portmann, Robert Koch, Wolfgang Pahl
Принадлежит: EPCOS AG

A hermetic wafer-level package composed of two piezoelectric wafers, preferably identical in terms of material, and a production method therefor are presented. The electrical and mechanical connection between the two wafers is accomplished with frame structures and pillars, the partial structures of which, distributed between two wafers, are wafer-bonded with the aid of connecting layers.

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Номер записи: 95
29-01-2015 дата публикации

ENCAPSULATION STRUCTURE INCLUDING A MECHANICALLY REINFORCED CAP AND WITH A GETTER EFFECT

Номер: US20150028433A1
Автор: Baillin Xavier, Diem Bernard, Polizzi Jean-Philippe, ROUZAUD Andre
Принадлежит: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

A structure () for encapsulating at least one microdevice () produced on and/or in a substrate () and positioned in at least one cavity () formed between the substrate and a cap () rigidly attached to the substrate, in which the cap includes at least: 1. The structure for encapsulating at least one microdevice produced on and/or in a substrate and positioned in at least one cavity formed between the substrate and a cap rigidly attached to the substrate , in which the cap includes at least:one layer of a first material, one face of which forms an inner wall of the cavity, andmechanical reinforcement portions rigidly connected to at least the said face of the layer of the first material, partly covering the said face of the layer of the first material, and having gas absorption and/or adsorption properties, where these mechanical reinforcement portions include at least one second material, the Young's modulus of which is higher than that of the first material.2. An encapsulation structure according to claim 1 , in which the second material is a metallic getter material.3. An encapsulation structure according to claim 1 , in which each of the mechanical reinforcement portions includes at least one first layer of the second material claim 1 , and at least one second layer of a third metallic getter material such that the first layer of the second material is positioned between the layer of the first material and the second layer of the third material and/or is covered by the second layer of the third material.4. An encapsulation structure according to claim 1 , in which each of the mechanical reinforcement portions includes a stack of layers of which at least two of the said layers form a bimetallic strip exerting on the cap a force directed to the exterior of the cavity.5. An encapsulation structure according to claim 1 , in which the material is made of Si and/or silica and/or silicon nitride claim 1 , and the second material is made of Cr and/or Ti and/or Co and/or ...

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Номер записи: 96
24-01-2019 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20190027358A1
Автор: CHEN WENG YI, Chen Yan-Da, Hsu Chang-Sheng, LIn Yuan Sheng, WANG Kuan-Yu
Принадлежит:

Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided. 1. A method for manufacturing a semiconductor device , comprising:providing a substrate comprising a MEMS region and a connection region thereon;providing a dielectric layer disposed on said substrate in said connection region;providing a poly-silicon layer disposed on said dielectric layer, wherein said poly-silicon layer serves as an etch-stop layer;providing a connection pad disposed on said poly-silicon layer;providing a passivation layer covering said dielectric layer, wherein the passivation layer comprises an opening that exposes said connection pad and a transition region between said connection pad and said passivation layer; andproviding a conductive layer conformally covering said connection pad and said poly-silicon layer in said transition region.2. The method of claim 1 , wherein said conductive layer comprises a single layer comprising metal claim 1 , conductive oxide claim 1 , conductive nitride or combination thereof.3. The method of claim 1 , wherein said conductive layer comprises multiple layers comprising metal claim 1 , conductive oxide claim 1 , conductive nitride or combination thereof.4. The method of claim 1 , wherein said MEMS region comprises a plurality of sealed ...

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Номер записи: 97
10-02-2022 дата публикации

MOBILE DEVICE HAVING A TUBULAR MICROPHONE INTEGRATED INTO A COVER ASSEMBLY

Номер: US20220046361A1
Автор: Collins-Smoot Brandon R., Ostdiek Jared P.
Принадлежит:

A mobile device may include an enclosure and a rear cover assembly affixed to a back portion of the enclosure. The rear cover assembly may include a protruding portion that extends above a surrounding portion of the rear cover assembly. The protruding portion may include a number of through holes that extend through the protruding portion of the rear cover assembly. In one through hole, a tubular microphone may be provided. The tubular microphone may include a microphone enclosure which may contain a MEMS microphone device, an integrated circuit, and an interposer positioned between the MEMS microphone device and the integrated circuit. A height of the tubular microphone may be substantially similar to a thickness of the protruding portion and the tubular microphone may be entirely or partially disposed within a through hole of the protruding portion. 1. A mobile device comprising:a touch-sensitive display;an enclosure at least partially surrounding the touch-sensitive display;a glass component coupled to the enclosure and defining a hole that extends through the glass component; and a microphone enclosure positioned within the hole and coupled to the glass component, the microphone enclosure defining an acoustic port;', 'a micro-electro-mechanical system (MEMS) microphone device positioned within the microphone enclosure and adjacent to the acoustic port;', 'an integrated circuit positioned within the microphone enclosure; and', 'an interposer positioned between the MEMS microphone device and the integrated circuit, the interposer operatively coupling the MEMS microphone device and the integrated circuit., 'a microphone assembly comprising2. The mobile device of claim 1 , wherein:the glass component further defines a protruding portion and a base portion surrounding the protruding portion;the protruding portion extends outward from the base portion; andthe hole extends through the protruding portion of the glass component.3. The mobile device of claim 2 , wherein: ...

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Номер записи: 98
02-02-2017 дата публикации

STACKED-DIE MEMS RESONATOR SYSTEM

Номер: US20170029269A1
Автор: Gupta Pavan, Lutz Markus, Partridge Aaron
Принадлежит:

A low-profile packaging structure for a microelectromechanical-system (MEMS) resonator system includes an electrical lead having internal and external electrical contact surfaces at respective first and second heights within a cross-sectional profile of the packaging structure and a die-mounting surface at an intermediate height between the first and second heights. A resonator-control chip is mounted to the die-mounting surface of the electrical lead such that at least a portion of the resonator-control chip is disposed between the first and second heights and wire-bonded to the internal electrical contact surface of the electrical lead. A MEMS resonator chip is mounted to the resonator-control chip in a stacked die configuration and the MEMS resonator chip, resonator-control chip and internal electrical contact and die-mounting surfaces of the electrical lead are enclosed within a package enclosure that exposes the external electrical contact surface of the electrical lead at an external surface of the packaging structure. 120-. (canceled)21. A microelectromechanical system (MEMS) device comprising:a die-mounting surface;electrically conductive leads;a CMOS die affixed to the die-mounting surface;wire bonds that extend from the CMOS die to the electrically conductive leads, respectively;a MEMS die stacked on and electrically coupled to the CMOS die in a flip-chip configuration; anda package enclosure that envelopes the MEMS die, CMOS die and wire bonds and has an exterior surface at which respective regions of the electrically conductive leads are exposed.22. The MEMS device of wherein the die-mounting surface comprises a lead frame and wherein the electrically conductive leads are fabricated as constituent members of the lead frame.23. The MEMS device of wherein the die-mounting surface comprises a first substantially planar surface of a die-attach paddle claim 21 , the die-attach paddle having a second substantially planar surface at least partially exposed at ...

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Номер записи: 99
04-02-2016 дата публикации

MICROELECTROMECHANICAL MICROPHONE

Номер: US20160031700A1
Автор: Brosnihan Timothy, Sparks Andrew William
Принадлежит:

This disclosure provides systems, methods and apparatus including microelectromechanical system microphones. In one aspect, the systems include a substrate made of a low dielectric material, such as glass. A layer of semiconductor material extends, substantially continuously over a surface of the substrate and includes an array of display elements that modulate light to form an image and a movable diaphragm that detects acoustic signals. The diaphragm is held away from the substrate by springs that include beams having an aspect ratio of about four to one. 1. A microphone , comprisinga substrate,a plurality of anchors attached to the substrate and extending away from the substrate,a diaphragm, anda plurality of springs each having a first end connected to a respective anchor and a second end connected to the diaphragm to hold the diaphragm away from the substrate, and each having a beam with a cross-section having an aspect ratio of greater than 4:1 and extending from the anchor to the diaphragm.2. The microphone of claim 1 , wherein the aspect ratio is between 4:1 and 16:1.3. The microphone of claim 1 , wherein the substrate comprises a low dielectric material.4. The microphone of claim 1 , further comprising a lip facing the substrate and extending along a peripheral edge of the diaphragm.5. The microphone of claim 1 , further comprising a rib connected to a peripheral edge of the diaphragm to reduce warping of the substrate.6. The microphone of claim 1 , further comprising a plurality of apertures formed on the diaphragm to reduce air resistance as the diaphragm moves toward the substrate.7. The microphone of claim 6 , further comprising a wall formed along a peripheral edge of an aperture and facing the substrate.8. The microphone of claim 1 , wherein one of the plurality of springs includes two parallel beams joined at respective ends of the beams to form a flexible connector.9. The microphone of claim 1 , wherein the beam and the diaphragm are integrally ...

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Номер записи: 100