ОГНЕУПОРНОЕ ИЗДЕЛИЕ И СПОСОБ ЕГО ФОРМОВАНИЯ И ИСПОЛЬЗОВАНИЯ

Изобретение относится к огнеупорному изделию. Технический результат изобретения заключается в повышении стойкости огнеупора к коррозии. Огнеупорное изделие содержит по меньшей мере 90 масс. % AlO; менее 3 масс. % SiOи первую легирующую добавку, содержащую оксид Та, Nb или их любое сочетание. 2 н. и 12 з.п. ф-лы, 10 ил.

КЕРАМИЧЕСКИЙ КОМПОЗИТНЫЙ МАТЕРИАЛ И СПОСОБ ЕГО ПОЛУЧЕНИЯ

Изобретение относится к чёрным керамическим композитных покрытиям и может быть использовано в оптических устройствах. Керамическое композитное покрытие содержит керамическую оксидную матрицу с внедренными в нее карбидными наночастицами, в частности, наночастицами карбида металла, и/или внедренными в нее металл-углеродными композитными наночастицами с отдельными фазами металла и углерода. Карбидные наночастицы являются метастабильными, и металл-углеродные композитные наночастицы представляют собой продукты распада метастабильных карбидных наночастиц. Еще один аспект изобретения относится к получению такого керамического композитного покрытия. 2 н. и 11 з.п. ф-лы, 7 ил., 1 табл.

ВЫСОКОЧАСТОТНЫЙ КЕРАМИЧЕСКИЙ МАТЕРИАЛ (ВАРИАНТЫ)

Изобретение относится к керамическим материалам на основе окислов титана и может быть использовано в производстве многослойных высокочастотных термостабильных керамических конденсаторов с электродами на основе сплава, содержащего Ag и Pd, а также в производстве микроволновых фильтров. В основу настоящего изобретения положено решение задачи создания материала с низкой температурой спекания Тсп=1080-1120oС, достаточной для использования серебро-палладиевых электродов с содержанием серебра не менее 70%, имеющего диэлектрическую проницаемость е от 22 до 60, при обеспечении широкого диапазона возможных групп температурного коэффициента ТКЕ. Согласно первому объекту изобретения, высокочастотный керамический материал содержит оксиды при следующем соотношении компонентов, вес.%: оксид цинка 16,0-23,9, оксид ниобия 47,4-75,9, оксид титана (со структурой рутила) 0,9-35,9. Согласно второму объекту изобретения, высокочастотный керамический материал содержит оксид состава (Znx Nby Tiz) O2 в количестве ...

СОСТАВ ТЕРМОМЕХАНИЧЕСКОГО ЭЛЕМЕНТА ДЛЯ КЛАПАНА ПОДАЧИ ВОДЫ

Изобретение относится к составу и способу изготовления термочувствительного керамического элемента теплового замка для устройства подачи воды в случае аварии высокотемпературного реактора. Для изготовления термочувствительного керамического элемента готовят шихту, содержащую следующие компоненты, масс.%: оксид ванадия V 85,32-90,06, оксид магния 4,68-4,94, добавку (натровый бентонит) 5-10, которая является пластификатором и активатором спекания. Шихту увлажняют, из полученного пресс-порошка формуют изделия и обжигают для получения прочной керамики, содержащей эвтектическую смесь оксида ванадия, оксида магния и активатора спекания. Такой состав шихты и использование при получении пресс-порошка вяжущих свойств системы “вода-натровый бентонит” позволяет получать прочные керамические заготовки и спеченные керамические термоэлементы требуемого качества c высокой прочностью в интервале температур от 20 до 600°С и имеющие свойство резкого перехода в вязко-пластичное состояние выше температуры ...

Противообледенительное покрытие для линий электропередач

... 1. Способ формирования пьезоэлектрического покрытия на кабеле линии электропередачи, который включает:подачу кабеля линии электропередачи через золь-гель материал, содержащий пьезоэлектрический материал,при этом указанная подача формирует неотвержденный слой золь-гель материала по меньшей мере на наружной поверхности кабеля линии электропередачи; иотверждение неотвержденного слоя золь-гель материала,при этом указанное отверждение формирует пьезоэлектрическое покрытие на кабеле линии электропередачи, причемуказанное пьезоэлектрическое покрытие содержит указанный пьезоэлектрический материал.2. Способ по п. 1, в котором золь-гель материал содержится в емкости золь-геля, имеющей днище, и в котором кабель линии электропередачи подают через указанное днище емкости для золь-геля.3. Способ по п. 2, в котором днище емкости для золь-геля содержит герметизированное отверстие, которое позволяет подавать кабель линии электропередачи через днище емкости для золь-геля и предотвращает вытекание золь-гель ...

Бессвинцовый пьезоэлектрический керамический материал

Изобретение относится к пьезотехнике и может быть использовано для создания высокочастотных пьезопреобразователей, работающих в широкой области температур (20-800°С) и частот, в частности, используемых в ультразвуковой дефектоскопии, для измерения вибрации и удара теплонагружаемых конструкций, подвергающихся динамическим воздействиям. Бессвинцовый пьезоэлектрический керамический материал, включающий LiO и NbO, дополнительно содержит оксид элемента из группы, мас.%: Zn, Mg, La, Sc, Sn, Zrили W, а его состав соответствует формуле xLiO-yNbO-AO, где x+y+z=100, при этом 9.33≤х≤9.35, 83.02≤у≤83.21, 7.44≤z≤7.65, A- оксид элемента с четной валентностью n из группы Zn, Mg, Sn, Zr, W, или xLiO-yNbO-zAO, где x+y+z=100, при этом 10.09≤x≤10.10, 89.74≤y≤89.81, 0.09≤z≤0.17, A - La, Sc. Технический результат - повышение удельного объемного электрического сопротивления ρ, снижение тангенса угла диэлектрических потерь tgδ при сохранении низких значений относительной диэлектрической проницаемости εε/εи достаточно ...

КЕРАМИЧЕСКОЕ ИЗДЕЛИЕ С ОРИЕНТИРОВАННЫМИ ЧАСТИЦАМИ И СПОСОБ ЕГО ПОЛУЧЕНИЯ

ТЕЛО, ПОЛУЧЕННОЕ СПЕКАНИЕМ, И ЕГО ПРИМЕНЕНИЕ

... 1. Тело, полученное спеканием, содержащее от 30 до 100 мол.% NbOx, где 0,5 Подробнее

Mehrschichtbauelement und Verfahren zur Herstellung

Es wird ein Mehrschichtbauelement angegeben, das ein dielektrisches keramisches Material umfasst, welches sich mit einer Varistorkeramik zu einem erfindungsgemäßen monolithischen Mehrschichtbauelement co-sintern lässt. Das Mehrschichtbauelement umfasst daher eine Schicht einer Varistorkeramik und eine andere Schicht eines Dielektrikums. Beide Schichten können im Mehrschichtbauelement unmittelbar benachbart angeordnet sein. Im Mehrschichtbauelement sind auf oder zwischen den keramischen Schichten Metallisierungen angeordnet, die zu Leiterabschnitten und metallisierten Flächen strukturiert sind. Die Metallisierungen bilden zusammen mit den Keramikschichten neben einem Varistor zumindest ein weiteres Bauelement aus, welches ausgewählt ist aus zumindest einer der Bauelementfunktionen Kapazität, Widerstand und Induktivität.

Lithiumionen leitende Glaskeramik und Verwendung der Glaskeramik

Die Glaskeramik weist wenigstens eine Lithiumionen leitende Kristallphase und einen Gesamtgehalt an Ta2O5 von mindestens 0,5 Gew.-% auf. Die Glaskeramik eignet sich bevorzugt als Bestandteil einer Lithiumionenbatterie, als Elektrolyt in einer Lithiumionenbatterie, als Teil einer Elektrode in einer Lithiumionenbatterie, als Additiv zu einem Flüssigelektrolyten in einer Lithiumionenbatterie oder als Beschichtung auf einer Elektrode in einer Lithiumionenbatterie.

Piezoelektrische keramische Zusammensetzung und daraus hergestelltes Bauteil

Verfahren zum Ausbilden einer Struktur mit optimierter Raumform

Verfahren zur Ausbildung einer Struktur (2) mit optimierter Raumform aus einem Werkstoff (4), mit den Schritten: a) Ausbilden einer Vorform (1) der Struktur (2) aus dem Werkstoff (4), b) Überführen des Werkstoffs (4) in unterschiedlichen Teilvolumina der Vorform (1) nacheinander in einen viskosen Zustand, in dem er in der Lage ist, sich unter Einwirkung innerer Spannungen umzuverteilen, wobei dem Werkstoff (4) geometrische Randbedingungen so vorgegeben werden, dass sich der Werkstoff (4) selbstorganisiert in die Struktur (2) mit der optimierten Raumform umverteilt, wobei die geometrischen Randbedingungen durch Bereiche der Vorform (1) bzw. der späteren Struktur (2) vorgegeben werden, in denen sich der Werkstoff (4) nicht in dem Zustand befindet, in dem er in der Lage ist, sich unter Einwirkung innerer Spannungen umzuverteilen, und c) Überführen des umverteilten Werkstoffs (4) in einen Zustand, in dem die erfolgte Umverteilung des Werkstoffs (4) konserviert ist.

Lead-free piezo-ceramic with alkaline earth doping, used e.g. to control vehicle fuel injection valve, includes perovskite- and tungsten bronze phases of specified composition

The ceramic includes at least one perovskite phase with the empirical formula Ap(Nb 1 - wTa w)O 3, where Ap is at least one alkali metal of the perovskite phase; w lies between 0 and 0.15. The ceramic also includes at least one tungsten-bronze phase with the empirical formula AwEw 2Nb 5O 1 5. Aw is at least one alkali metal of the tungsten bronze phase and Ew is at least one alkaline earth metal of the tungsten bronze. The alkali metal Ap of the perovskite phase is selected from lithium, sodium and potassium. The following relationship is satisfied: for Li xK 1-x-yNa y, x lies between 0 and 0.15, and y lies between 0.25 and 0.75. The alkaline earth metal Ew is selected from calcium, strontium and barium, the following relationship being satisfied: for Ba 1-x-ySr xCa y, x is between 0 and 1, y is between 0 and 1 and 1-x-y = 1. The tungsten bronze proportion of the tungsten bronze phase, related to the solid of the piezoceramic material, lies in the range 0.01 vol% to 25.0 vol%, especially ...

Bleifreier piezokeramischer Werkstoff des Kalium-Natrium-Niobat-Systems mit Mangan-Dotierung, Verfahren zum Herstellen eines Bauteils mit dem piezokeramischen Werkstoff und Verwendung des Bauteils

Die Erfindung betrifft einen piezokeramischen Werkstoff, aufweisend eine Perowskit-Phase mit NaNbO3, das eine aus dem Bereich von 0,02 Gew.-% bis 1,0 Gew.-% ausgewählte Mangan-Dotierung aufweist. Vorzugsweise ist neben Natrium Kalium als weiteres Alkalimetall mit einem Anteil von 0,45 Mol-% bis 0,5 Mol-% enthalten. Bei dieser Zusammensetzung liegt ein System mit morphotroper Phasengrenze vor. Damit gehen sehr gute piezoelektrische Eigenschaften einher. Daneben wird ein Verfahren zum Herstellen eines piezokeramischen Bauteils mit dem piezokeramischen Werkstoff mit folgenden Verfahrensschritten angegeben: a) Bereitstellen eines Grünkörpers mit einer piezokeramischen Ausgangszusammensetzung des piezokeramischen Werkstoffs und b) Wärmebehandeln des Grünkörpers, wobei aus der piezokeramischen Ausgangszusammensetzung der piezokeramische Werkstoff des Bauteils entsteht. Das Wärmebehandeln umfasst ein Kalzinieren und/oder ein Sintern der piezokeramischen Zusammensetzung. Das piezokeramische Bauteil ...

Improvements in or relating to Dielectric Materials with a Stable Dielectric Constant at High Temperature

... 1,156,199. Ordered complex perovskite-type single crystals. UNITED AIRCRAFT CORP. 29 Nov., 1966 [14 Dec., 1965], No. 53273/66. Heading C1A. [Also in Division H1] The invention comprises Ordered complex perovskite-type single crystals, grown in a flux containing fluoride ions, of the general formula in which A is barium or strontium and B1 is. divalent magnesium, calcium, zinc, nickel or cobalt. These are produced by mixing, in proportions to obtain a stoichiometric composition according to the formula given above, powders consisting of a compound from which an oxide AO may be obtained, a divalent metal oxide B10 and Ta 2 O 5 . This mixture is then mixed with a fluoride flux of the formula AF 2 , where A is as above, and heating the mixture to a temperature sufficiently above the melting point of the flux and holding at this temperature for 0À5-8À5 hours then gradually cooling the mixture to effect crystal formation and extracting the crystals from the flux. These materials ...

Translucent ceramic with high refractive index

A ceramic material powder for a translucent ceramic is moulded with a binder and the resulting green compact is embedded in a ceramic powder containing at least one element in common with the green compact. The compact embedded in the ceramic powder is heated in an oxidising atmosphere to remove the binder. Thereafter the compact is fired in an oxygen concentration higher than that in the oxidising atmosphere to yield a translucent ceramic. The translucent ceramic has a refractive index of at least 1.9 and is paraelectric, having a perovskite crystal phase as a principal crystal phase. The translucent ceramic may be represented by Formula I: Ba (SnuZr1-u)xMgyTaz vOw, Formula II: Ba(ZrxMgyTaz)vOw or Formula III: Ba (SnuZr1-u)x(ZntMg1-t)yNbz vOw. The ceramic may be used as an optical part.

Wear resistant coating with exposed particles

A wear-resistant coating, capable of imparting excellent wear resistance to a silent chain, comprises a base coating consisting of a hard inorganic material having interspersed particles of a hard inorganic material different from the inorganic material of the base coating characterised in that a part of the interspersed particles is exposed on the surface of the coating. The coating has superior oil-retaining properties as a result of gaps formed at the interface between the particles and the base coating, and the superior oil-retaining properties contribute to the wear-resistance of the coating. The hard inorganic material of the base coating is preferably vanadium carbide and the interspersed particles may be aluminium oxides.

Powder modification in the manufacture of solid state capacitor anodes

Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example, bismuth vanadate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

DIELECTRIC COMPOSITIONS

Ceramic-like scintillator

Scintillator bodies comprising fluorescent materials and having high optical translucency with low light absorption and methods of making the scintillator bodies are disclosed. In accordance with one embodiment of the invention, the scintillator bodies are formed by a hot-pressing process. In another embodiment, cold-pressing followed by sintering is employed. Another embodiment employs controlled cooling. Another embodiment employs hot-forging. The scintillator bodies that result are easily machined to desired shapes and sizes.

Method of making a semicrystalline body, a semi-crystalline body, article comprising the semicrystalline body, and method of making it

... 905,253. Ceramic glass. CORNING GLASS WORKS. June 30, 1960 [July 1, 1959; May 18, 1960], No. 23000/60. Drawings to Specification. Class 56. [Also in Group XXXVI] A semi-crystalline ceramic body intended for use as a dielectric comprises, as to at least 30- 90%, the constituent oxides of at least one oxygen octahedra ferro-electric compound, at least 30% of the body being in the form of a crystalline phase uniformly dispersed in another phase, being crystallized in situ from a homogeneous glass, the body containing at least one glass-forming oxide. The percentages quoted are " cationic mol." figures, i.e. figures calculated in respect of molecules, or part molecules, containing one cationic atom, e.g. SiO 2 , AlO 1 . 5 . The glass-forming composition is melted, cooled and heat-treated to crystallize it. The temperature at which crystallization occurs is determined by " differential thermal analysis," i.e. observing discontinuities in the rate of change of temperature, during heating, as ...

ANODE CONTAINING NIOBIUM OXIDE POWDERS AND PROCEDURES FOR YOUR PRODUCTION

VERFAHREN ZUR HERSTELLUNG EINES KERAMISCHEN WERKSTOFFES UND KERAMISCHER WERKSTOFF

VERFAHREN ZUR FÄRBUNG GESCHLIFFENER SCHMUCKSTEINE

A method of coloring cut gemstones introduces metals or metal oxides into a surface layer by means of heat treatment. During the heat treatment the gemstones are laid on a solid plate and the metals or metal oxides form a substantial constituent of the plate. The surface of the gemstone is protected from direct content with the metals and metal oxides in the plate by a layer containing non-coloring oxides.

PIEZOELECTRIC CERAMIC COMPOSITION AND FROM IT MANUFACTURED CONSTRUCTION UNIT

PROCEDURE FOR THE PARTIAL REDUCTION OF A NIOBIUM OXIDE AND NIOBIUM OXIDES WITH REDUCED OXYGEN PORTION

COMPOSITIONS DERIVED FROM BI4V2OÕ11?

Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides

Methods to partially reduce certain metal oxides and oxygen reduced metal oxides

CERAMIC WITH ELECTRICALLY VARIABLE BIREFRINGENCE

Pyrochlore thin films and process for making

DIELECTRIC CERAMIC MATERIAL AND METHOD OF PRODUCING SAME

DIELECTRIC CERAMIC COMPOSITION

A dielectric ceramic composition comprising oxides containing Ba, Zn, Mg, Ni and Ta each within such a range that BaO is not less than 59.5 mol% and not greater than 61.5 mol%, ZnO is less than 10 mol%, MgO is less than 10 mol%, NiO is less than 20 mol%, Ta2O5 is not less than 19.3 mol% and less than 21 mol%. A portion of Ni is substituted with less than 0.4 mol% of Co as CoO. The dielectric ceramic composition is excellent both in dielectric constant and unload quality factor and also having stable temperature characteristics. Partial substitution of Ni with Co can lower the sintering temperature with no remarkable reduction in the unload quality factor.

COMPOSITIONS FOR EROSION AND MOLTEN DUST RESISTANT ENVIRONMENTAL BARRIER COATINGS

Coating systems are provided for positioning on a surface of a substrate, along with the resulting coated components and methods of their formation. The coating system may include a layer having a compound of the formula: Al-b B b Z1-d D d MO6 where: A is Al, Ga, In, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Fe, Cr, Co, Mn, Bi, or a mixture thereof; b is 0 to about 0.5; Z is Hf, Ti, or a mixture thereof; D is Zr, Ce, Ge, Si, or a mixture thereof; d is 0 to about 0.5; and M is Ta, Nb, or a mixture thereof.

ANTI-ICING COATING FOR POWER TRANSMISSION LINES

Provided are methods and systems for forming piezoelectric coatings on power line cables using sol-gel materials. A cable may be fed through a container with a sol-gel material having a piezoelectric material to form an uncured layer on the surface of the cable. The layer is then cured using, for example, infrared, ultraviolet, and/or other types of radiation. The cable may be suspended in a coating system such that the uncured layer does not touch any components of the system until the layer is adequately cured. Piezoelectric characteristics of the cured layer may be tested in the system to provide a control feedback. The cured layer, which may be referred to as a piezoelectric coating, causes resistive heating at the outer surface of the cable during vibration of the cable due transmission of alternating currents and environmental factors.

Procédé de fabrication d'un corps en céramique semi-cristalline

Widerstand mit positivem Temperaturkoeffizienten und Verfahren zu seiner Herstellung

СПОСОБ ГИДРОТЕРМАЛЬНОГО ЖИДКОСТНО-ФАЗОВОГО СПЕКАНИЯ КЕРАМИЧЕСКИХ МАТЕРИАЛОВ И ПОЛУЧЕННЫЕ ТАКИМ СПОСОБОМ ПРОДУКТЫ

Разработанный способ гидротермального жидкостно-фазового спекания для получения монолитной массы из пористой матрицы, который предусматривает: (i) получения пористой матрицы, имеющей внутреннепоровое пространство, и которая содержит, по меньшей мере, первый реагент; (ii) контакт пористой матрицы с пропитываемой средой, и которая переносит, по меньшей мере, второй реагент; (iii) обеспечение инфильтрации пропитываемой среды, по меньшей мере, в значительную часть внутреннепорового пространства пористой матрицы при условиях, поддерживающих взаимодействие, по меньшей мере, между первым реагентом и по меньшей мере вторым реагентом, чтобы получить, по меньшей мере, первый продукт; и (iv) обеспечение получения, по меньшей мере, первого продукта с заполнением, по меньшей мере, части внутреннего пространства пористой матрицы, с получением таким образом монолитной массы, имеющей взаимосвязанную микроструктуру, где первый продукт содержит спекшуюся керамику без титаната бария.

СПОСОБ ГИДРОТЕРМАЛЬНОГО ЖИДКОФАЗНОГО СПЕКАНИЯ КЕРАМИЧЕСКИХ МАТЕРИАЛОВ И ПОЛУЧАЕМЫЕ ПРИ ЭТОМ ПРОДУКТЫ

Разработан способ получения монолитной массы из пористой матрицы, который включает: (i) получение пористой матрицы, в которой имеется внутрипоровое пространство, и содержащей, по меньшей мере, первый реагент; (ii) контактирование пористой матрицы с просачивающейся средой, которая переносит, по меньшей мере, второй реагент; (iii) обеспечение инфильтрации просачивающейся среды, по меньшей мере, в значительной части внутрипорового пространства пористой матрицы в условиях, которые поддерживают взаимодействие, по меньшей мере, между первым реагентом и, по меньшей мере, вторым реагентом, чтобы получить, по меньшей мере, первый продукт; и (iv) обеспечение получения, по меньшей мере, первого продукта с заполнением по меньшей мере части внутреннего пространства пористой матрицы, с получением таким образом монолитной массы, которая не содержит титаната бария.

Lead-free glass material for use in sealing and, sealed article and method for sealing using the same

Lanthanum-doped silver niobate lead-free anti-ferroelectric energy storage ceramic material and preparation method thereof

Low-temperature co-fired ceramic dielectric material and preparation method thereof

Sodium niobate-based lead-free potassium-free high-power piezoelectric ceramic and preparation method thereof

DIELECTRIC CERAMIC COMPOSITION FOR HIGH FREQUENCY

Transparent, ceramic, ferroelectric, lead free niobate - made by sintering fine precurson powder and used for optical commutators

Ceramic composition for dielectric resonator and method of making the composition

L'invention concerne une composition céramique pour résonateur diélectrique. La composition est caractérisée en ce qu'elle est formée par une phase pérovkite complexe pure de formule BaZn1 / 3 ( 1 - y ) Niy / 3 Ta2 / 3 O3 , avec O <= y <= 0,25, y étant un paramètre de proportions molaires, et d'une faible quantité en poids de 0,2 à 1% d'un dopant s'intégrant dans la structure cristalline de la phase pérovskite. L'invention est utilisable pour des résonateurs diélectriques à coefficient de qualité élevé et stables en température.

Method and composition for separating oxygen from a gas mixture.

PROCEEDED OF PREPARATION Of a CERAMIC MATERIAL LOW THICKNESS GRADIENT OF SURFACE POROSITY HAS Controls, CERAMIC MATERIAL OBTAINED, ELECTROCHEMICAL CELL AND CERAMIC MEMBRANE INCLUDING/UNDERSTANDING IT

Procédé de préparation d'un matériau céramique de faible épaisseur à gradient de porosité superficielle contrôlé, comprenant une étape d'infiltration d'un substrat porogène poreux, par une suspension d'un matériau céramique, une étape d'évaporation du solvant, une étape de déliantage, et une étape, de frittage. cellule électrochimique et membrane céramique conductrice mixte ionique - électronique, comprenant ledit matériau céramique et leur utilisation pour extraire l'oxygène d'un mélange gazeux ou pour analyser la présence d'oxygène dans une atmosphère gazeuse. Procédé de préparation d'oxygène ultra - pur par séparation de l'oxygène de l'air par conduction ionique à travers ladite cellule. Procédé d'élimination de l'oxygène d'une atmosphère gazeuse par séparation de l'oxygène de ladite atmosphère, à travers ladite cellule. Procédé de production d'énergie thermique et électrique au sein d'une pile à combustible solide, par réaction de l'oxygène et de l'hydrogène en séparant oxygène réagissant ...

Composite BIMEVOX electrolyte used for separating oxygen from gas mixture

Composition consistant en un mélange contenant au moins 70 % en volume d'un ou plusieurs composés de la famille des BIMEVOX avec jusqu'à 30 % en volume d'au moins un ou plusieurs composés chimiquement inertes choisis parmi les carbures, tels que le carbure de tungstène ou le carbure de silicium, les nitrures, tels que le nitrure de silicium ou les oxydes, tel que l'oxyde de titane, l'alumine, BiVO4, la zircone, l'oxyde de cérium, l'oxyde d'hafnium, ou la thorine, lesdits zircone, oxyde de cérium, oxyde d'hafnium, ou thorine étant stabilisés par un ou plusieurs composés choisis parmi les oxydes d'yttrium, de baryum, de magnésium, de calcium, de strontium, de scandium ou de lanthane.

New bismuth vanadium oxide cpd. - used as solid electrolyte for oxygen sepn. from gas mixt.

L'invention concerne un procédé de séparation d'oxygène d'un mélange de gaz contenant de l'oxygène au moyen d'une cellule constituée d'un électrolyte solide, selon lequel on met au contact d'une première face de la cellule un mélange de gaz présentant une pression partielle en oxygène P1 supérieure à la pression partielle en oxygène P2 régnant sur une autre face de la cellule, opposée à ladite première face, l'électrolyte solide étant constitué d'un composé dérivé de Bi4 V2 O1 1 dont l'un au moins des éléments constitutifs est substitué par au moins un élément de substitution choisi tel que le type structurel de la phase gamma de Bi4 V2 O1 1 est maintenu ainsi que l'équilibre des charges. L'invention concerne également de nouvelles compositions pouvant être utilisées dans ce procédé.

Production of multilayer structures, especially low temperature co fired ceramics for electronic applications, comprises using a ceramic powder with a defined surface area

L'invention concerne un procédé de fabrication de structure multicouches à base de poudre de matériau céramique, comprenant la réalisation d'au moins une poudre de matériau céramique, la mise en suspension de ladite poudre céramique et l'étalement de ladite suspension sur un support en défilement caractérisé en ce qu'il comprend en outre des moyens pour fabriquer la poudre de matériau céramique avec une surface spécifique comprise entre environ 3 m2/g et 5 m2/g. La surface spécifique de la poudre de matériau céramique présente une influence importante sur la qualité des couches obtenues selon la technique de bandes coulées classiquement utilisée dans la technologie LTCC (Low Temperature Cofired Ceramics). Les surfaces spécifiques revendiquées permettent d'obtenir des surfaces lisses sans fissures ni craquelures. Application : Intégration de composants dans des structures multicouches céramiques.

VANADIUM DIOXIDE MICROPARTICLES, PROCESS Of OBTAINING OF THE AFORESAID MICROPARTICLES AND THEIR USE, IN PARTICULAR FOR SURFACE COATINGS

VANADIUM DIOXIDE MICROPARTICLES, PROCESS Of OBTAINING OF THE AFORESAID MICROPARTICLES AND THEIR USE, IN PARTICULAR FOR SURFACE COATINGS

VANADIUM DIOXIDE MICROPARTICLES, PROCESS Of OBTAINING OF THE AFORESAID MICROPARTICLES AND THEIR USE, IN PARTICULAR FOR SURFACE COATINGS

VANADIUM DIOXIDE MICROPARTICLES, PROCESS Of OBTAINING OF THE AFORESAID MICROPARTICLES AND THEIR USE, IN PARTICULAR FOR SURFACE COATINGS

THE MANUFACTURING METHOD OF THE OPTICAL LAYER COMPRISING THE THERMOCHROMIC LAYER USING HYDROTHERMAL METHOD AND PHOTONIC SINTERING PROCESS

산화물 소결체 및 반도체 디바이스

... 인듐과, 텅스텐과, 아연 및 주석 중 적어도 하나를 포함하는 산화물 소결체이며, 결정상으로서 텅스텐과, 아연 및 주석 중 적어도 하나를 포함하는 복산화물 결정상을 포함하는 산화물 소결체, 그리고 이 산화물 소결체를 타겟으로서 이용하여 스퍼터법에 의해 형성한 산화물 반도체막(14)을 포함하는 반도체 디바이스(10)가 제공된다.

Composition of lead-free piezoelectric ceramics for sensor and actuator and making method for the same

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST CLEANING DEVICE

BODY OF SINTERED CERAMIC OXIDE-BORIDE BY REACTION, CELL COMPONENT PRODUCTION AND ELECTROLYTIC ALUMINUM PRODUCTION CELL; PROCESS FOR PRODUCING ALUMINUM IN ELECTROLYSIS, PROCESS FOR FORMING THE BODY

Process for producing niobium suboxide

The present invention relates to a process for producing niobium suboxide of the approximate composition NbO, the niobium suboxide being suitable in particular for the production of anodes for solid electrolyte capacitors.

Refractory materials

Refractory materials are provided which contain P2O5/R2O3 constituents, where R is Y, Sc, Er, Lu, Yb, Tm, Ho, Dy, Tb, Gd, or a combination thereof, and/or V2O5/R'2O3 constituents where R' is Y, Sc, one or more rare earth elements, or a combination thereof. In certain embodiments, the refractory materials are xenotime-type materials and/or xenotime-stabilized zircon-type materials. The refractory materials can be used in the manufacture of glass and glass-ceramics. For example, the refractory materials, especially those that contain P2O5/R2O3 constituents, can be used as forming structures ("isopipes") in the fusion process for making flat sheets of glass such as the glass sheets used as substrates in the manufacture of flat panel displays.

Process for preparation of zirconium tungstate ceramic body, zirconium tungstate ceramic body prepared thereby, and fiber bragg grating temperature compensated device

The present invention discloses a process for the preparation of zirconium tungstate (ZrW2O8) ceramic body, comprising a reaction-sintering step to react and sinter powders of the raw materials comprising a Zr-containing compound and a W-containing compound to form a zirconium tungstate ceramic body. The addition of powders of zirconium tungstate single crystal as the crystaling seed in the process can effectively reduce the steps, shorten preparation time, lower sintering temperature, and save cost. Also, a process for the preparation of modified zirconium tungstate ceramic body is disclosed, by forming a second phase in the zirconium tungstate ceramic body to adjust the thermal expansion coefficient of the zirconium tungstate ceramic body. The present invention also relates to the use of the modified zirconium tungstate ceramic body to provide a fibber bragg grating (FBG) temperature compensated device.

Preparation of translucent strontium barium niobate ceramics using reaction sintering

In this patent, reaction sintering was used to prepare translucent strontium barium niobate ceramics (SrxBa1-xNb2O6, x= 0.2 to 0.7). High purity powders of strontium carbonate (SrCO3) and barium carbonate (BaCO3) were mixed with niobium oxide (Nb2O5), respectively, at the same mole using ball mill. The mixed powders were dried and ground by a mortar. Thereafter, they were calcined at 800-1050 DEG C for 1-4h in air to form strontium niobate (SrNb2O6) and barium niobate (BaNb2O6), respectively. Precursor powders of strontium niobate (SrNb2O6) and barium niobate (BaNb2O6) were mixed in an appropriate ratio and pressed. Compacts were reaction-sintered in a temperature range of 1300 DEG C to 1320 DEG C in O2 and then heat-treated in a temperature range of 1260 DEG C to 1275 DEG C in O2. We also propose the related basic principles and microstructures.

PROCESSES FOR NIOBIUM OXIDE EXTRUSION CASTING OR CONFORMATION AND PREPARATION OF A HYDROLIZED AND AMORPHOUS NIOBIUM OXIDE AND USE OF A NIOBIUM OXIDE IN THE EXTRUDED FORM

The invention relates to a process for extrusion casting or conformation of a niobium oxide, in which the extruded profile is obtained by means of drying and calcination, in appropriate conditions, of a green extruded profile, which is obtained by extrusion casting of a niobium oxide viscous gel. The invention also relates to a process for preparation of a hydrolyzed and amorphous niobium oxide, in which the hydrolyzed and amorphous niobium oxide is synthesized from organic or inorganic niobium precursors. At last, the invention relates to uses of a niobium oxide in the extruded form.

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST CLEANING DEVICE

A piezoelectric material including a strontium calcium sodium niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are strontium, calcium, sodium, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Sr/Nb = a, 0.320 ≤ a ≤ 0.430, when Ca/Nb = b, 0.008 ≤ b ≤ 0.086, and when Na/Nb = c, 0.180 ≤ c ≤ 0.200. The tungsten content on a metal basis is 0.40 to 3.20 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

CHEMICALLY STABLE SOLID LITHIUM ION CONDUCTORS

The invention relates to chemically stable solid lithium ion conductors, to a method for the production thereof and to the use thereof in batteries, accumulators, supercaps and electrochromical devices.

NIOBIUM MONOXIDE POWDER, NIOBIUM MONOOXIDE SINTERED BODY AND CAPACITOR USING THE SINTERED BODY

... (1) A niobium monoxide powder for a capacitor represented by formula: NbOx (x=0.8 to 1.2) and optionally containing other elements in an amount of 50 to 200,000 ppm, having a tapping density of 0.5 to 2.5 g/ml, an average particle size of 10 to 1000 m, angle of repose from 10° to 60°, the BET specific surface area from 0.5 to 40 m2/g and a plurality of pore diameter peak tops in the pore distribution, and a producing method thereof; (2) a niobium monoxide sintered body, which is obtained by sintering the above niobium monoxide powder and, having a plurality of pore diameter peak tops in a range of 0.01 m to 500 m, preferably, the peak tops of two peaks among the plurality of pore diameter peak tops having a highest relative intensity are present in the range of 0.2 to 0.7 m and in the range of 0.7 to 3 m, respectively, and a producing method thereof; (3) a capacitor using the above sintered body and a producing method thereof; and (4) an electronic circuit and electronic device using the ...

REFRACTORY OBJECT, GLASS OVERFLOW FORMING BLOCK, AND PROCESS FOR GLASS OBJECT MANUFACTURE

A refractory object can include at least 10 wt % Al2O3. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×105 m/(m×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an AlSiMg glass sheet. In a particular embodiment, a layer including MgAl oxide can initially form along exposed surfaces of the glass overflow forming block when forming the AlSiMg glass sheet.

CAPACITOR HAVING A DIELECTRIC CERAMIC LAYER

The invention relates to a capacitor with two or more opposing pairs of electrode layers ( 1 ) with an intermediate dielectric layer ( 2 ), in which the dielectric layers ( 2 ) comprise a ceramic material that contains at least two different components existing in separate phases, in which each component exhibits a perovskite structure that contains silver in the A-positions and niobium and tantalum in the B-positions, and in which the composition of a component A and the composition of a component B are each chosen in such a way that Tkepsilon_A and Tkepsilon_B exhibit different signs within a temperature range. The suitable mixing ratio of the components can, for example, be realized by stacking green compacts of component A on green compacts of component B in a suitable quantity.

Translucent ceramic, method of producing the same and optical devices

A ceramic material powder for a translucent ceramic is molded with a binder, and the resulting green compact is embedded in a ceramic powder having the same composition with the ceramic material powder. After removing the binder, the green compact embedded in the ceramic powder is fired in an atmosphere having an oxygen concentration higher than that in the removal procedure of the binder and thereby yields a translucent ceramic represented by Formula I: Ba{(SnuZr1-u)xMgyTaz}vOw, Formula II: Ba(ZrxMgyTaz)vOw or Formula III: Ba{(SnuZr1-u)x(ZntMg1-t)yNbz}vOw. The translucent ceramic has a refractive index of 1.9 or more and is paraelectric.

Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer

A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.

Electrolytic perovskites

An electrolytic perovskite and method for synthesizing the electrolytic perovskite are described herein. Basically, the electrolytic perovskite is a solid that has an ion conductivity greater than 10−5 S/cm in a temperature range of 0-400° C., wherein the ion is Li+, H+, Cu+, Ag+, Na+ or Mg2+. For example, Li1/8Na3/8La1/4Zr1/4Nb3/4O3 (5.26×10−4 S/cm) and Li1/8K1/2La1/8NbO3 (2.86×10−3 S/cm) are two electrolytic perovskites that have been synthesized in accordance with the present invention that have a high Li+ conductivity at 20° C. Both compositions have been confirmed in experiments to conduct Ag+ and H+ ions, as well. The present invention also includes a solid proton conductor that can be formed from the electrolytic perovskite by replacing the ions located therein with protons. The electrolytic perovskite and solid proton conductor can be used in a wide variety of applications or devices including, for example, a fuel cell, a membrane reactor, an amperometric hydrocarbon sensor or a ...

Dielectric ceramic composition for high frequency

A dielectric ceramic composition for high frequency-use comprising a composition (A) containing at least Ba, Mg and W as metal elements represented by a composition formula expressed in a mole ratio of these metal elements, xBaO.yMgO.zWO3, in which x, y and z satisfy the following relation 40≦x≦60, 13≦y≦40, 20≦z≦30, and x+y+z=100, and at least one element (B) selected from Group 3a elements and Group 4a elements in the periodic table, Sn, Mn and Ca. A ceramic molded product composed of this composition has a high dielectric constant and a high Q value in a high frequency region of at least 10 GHz but also has a temperature coefficient (τf) of a resonance frequency which is not shifted too much to a negative side and has a suitable value. Accordingly, the composition may be preferably used as a resonator and a dielectric substrate material for MIC in a high frequency region of a microwave or a millimeter wave.

Transparent ceramics

A transparent, complex oxide ceramic having the formula: (Sr1-x Me'x) (Li1/4 Me"3/4) O33 wherein x is 0.01-0.50, Me' is at least one metal selected from the group of Ca, Ba, and Pb, and Me" is Nb and/or Ta. The present ceramics can be used in the fabrication of gas discharge tubes and for infrared-ray tubes as optical devices and as substrates for higher quality electronic parts, and as an insulator for microwave frequency electronic devices.

Grain oriented ceramics and a production process thereof, as well as an anisotropically-shaped powder A and A production process thereof

Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.

Methods to partially reduce certain metal oxides and oxygen reduced metal oxides

Methods to at least partially reduce valve metal oxides are described wherein the process includes heat treating the valve metal oxide in the presence of a getter material, in an atmosphere which permits the transfer of oxygen atoms from the starting valve metal oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced valve metal oxide. Valve metal oxides and/or suboxides thereof are also described as well as capacitors containing anodes made from the valve metal oxides and suboxides thereof.

Lead-free glass material for use in sealing and, sealed article and method for sealing using the same

A lead-free glass material for use in sealing, which has a glass composition being free of lead and exhibits high performance in the range of choices for the material to be sealed, the sealing processability, the sealing quality and the like, has a glass composition including four types of metal oxides of V2O5, ZnO, BaO and P2O5 as essential ingredients.

Piezoelectric material, piezoelectric device, and electronic apparatus

A piezoelectric material that has good insulating properties and piezoelectricity and is free of lead and potassium and a piezoelectric element that uses the piezoelectric material are provided. The piezoelectric material contains copper and a perovskite-type metal oxide represented by general formula (1): (1−x){(NayBa1−z)(NbzTi1−z) O3}-xBiFeO3 (where 0 Подробнее

Piezoelectric element and liquid ejecting head

Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer including a plurality of crystal grains containing potassium, sodium, and niobium and provided above the first electrode, and a second electrode provided above the piezoelectric layer. An atom concentration NK1(atm %) of potassium contained in grain boundaries of the crystal grains and an atom concentration NK2(atm %) of potassium contained in the crystal grains satisfy a relationship of 1.0 Подробнее

MG2MM' 06+X, ( M=Y, RARE EARTH METAL, AND M'=SN, SB, ZR, HF, AND TA) COMPOUNDS AND A METHOD FOR THE PRODUCTION OF THE SAME

Ferroelectric film and method of manufacturing the same

A method of manufacturing a ferroelectric film including: (a) mixing a polycarboxylate containing niobium, a polycarboxylate containing bismuth, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent; and (b) applying the resulting mixed solution to a substrate and heat-treating the applied mixed solution to form a ferroelectric film including BiNbO4.

CERAMIC

COMPOSITION OF PIEZOELECTRIC PORCELAIN AND PIEZOELECTRIC CERAMIC ELEMENT USING IT

PROBLEM TO BE SOLVED: To provide a composition of piezoelectric porcelain the main component of which is SrBi2Nb2O9, which is useful as a material for a piezoelectric ceramic element or the like, in which Qmax can be improved without increasing the content of Bi over the stoichiometric composition, which contains no lead or lead compound or very little lead or lead compound and shows Qmax of a practical use level. SOLUTION: In the composition of piezoelectric porcelain comprising as a main component a bismuth lamellar compound composed of Sr, Bi, Nb, oxygen and a trivalent metal element other than Bi, when the molar ratio of Sr, Bi, Nb and the trivalent metal element other than Bi is expressed as a:b:c:x, the expressions of 0.275 Подробнее

Composite oxide having n-type thermoelectric conversion property

A composite oxide of the composition of the formula: LavM<1>wNixM<2>yOz (wherein M<1> is at least one element selected from the group consisting of Na, K, Sr, Ca, Bi and Nd; M<2> is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co and Cu; and the indexes are numbers satisfying the relationships 0.5 & v & 1.2, 0 & w & 0.5, 0.5 & x & 1.2, 0.01 & y & 0.5 and 2.8 & z & 3.2). This composite oxide exhibits an electric resistivity of 10 m L cm or below and a negative Seebeck coefficient at 100{ or higher and provides a novel material exhibiting excellent performance as an n-type thermoelectric conversion material.

Proton conducing ceramic membrage

Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators

OPTICAL COATING MATERIAL FROM MIXTURE OXIDES WITH HIGH REFRACTIVE INDEX AND PROCEDURE

NIOBIUM POWDER FOR A CONDENSER, NIOBIUM-SINTERED BODY AND CONDENSER

DROPLET OUTPUT HEAD

PROCEDURE FOR THE PRODUCTION OF A THIN CERAMIC MATERIAL WITH CONTROLLED SURFACE POROSITY GRADIENTS, FROM IT MANUFACTURE CERAMIC MATERIAL THIS MATERIAL ABSTENTION ELECTRO-CHEMICAL CELL AND CERAMIC DIAPHRAGM AND USE OF THE MATERIAL, THE CELL AND THE DIAPHRAGM

VERFAHREN ZUR HERSTELLUNG EINES KERAMISCHEN WERKSTOFFES UND KERAMISCHER WERKSTOFF

HEAT-INSULATING LAYER FROM COMPLEXES PEROWSKIT

FORERUNNER SOLUTION, PROCEDURE FOR YOUR PRODUCTION AND USE

DIAMOND SIMULANTS

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): Na x K (1-x) NbO 3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na + ion and K + ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

Piezoelectric ceramic, method for producing same, and piezoelectric device

Disclosed is a piezoelectric ceramic which is characterized by containing [K 1-x Na x ] 1-y Li y [Nb 1-z-w Ta z Sb w ]O 3 (wherein x, y, z and w each represents a molar ratio and satisfies 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦w≦1) as the main phase and K 3 Nb 3 O 6 Si 2 O 7 as a sub-phase, while containing, as an additive, a Cu compound in an amount of 0.02-5.0 mol in terms of CuO relative to 100 mol of the main phase.

Oriented Perovskite Oxide Thin Film

A thin film which comprises an organic metal salt or an an alkoxide salt or an amorphous thin film is formed on a substrate, wherein each of the thin films enables the formation of a Dion-Jacobson perovskite-type metal oxide represented by the composition formula A(B n−1 M n O 3n+1 ) (wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs; B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a monovalent alkali metal ion; and M comprises one or more of Nb and Ta; wherein a solid solution may be formed with Ti and Zr) on a non-oriented substrate. The resulting product is maintained at the temperature between room temperature and 600° C.; and crystallization is achieved while irradiating the amorphous thin film or the thin film comprising the organic metal salt or the alkoxide salt on the substrate with ultraviolet light such as ultraviolet laser. In this manner, it becomes possible to produce an oriented Dion-Jacobson perovskite-type oxide thin film characterized in that thin film can be oriented on the substrate in a (001) direction.

Dielectric composition and ceramic electronic component including the same

There is provided a dielectric composition including: a base powder; a first accessory component including a content (x) of 0.1 to 1.0 at % of an oxide or a carbonate including transition metals, based on 100 moles of the base powder; a second accessory component including a content (y) of 0.01 to 5.0 at % of an oxide or a carbonate including a fixed valence acceptor element, based on 100 moles of the base powder; a third accessory component including an oxide or a carbonate including a donor element; and a fourth accessory component including a sintering aid.

Piezoelectric material, piezoelectric element, liquid discharge head, ultrasonic motor, and dust cleaning device

A piezoelectric material including a barium bismuth niobate-based tungsten bronze structure metal oxide having a high degree of orientation is provided. A piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust cleaning device including the piezoelectric material are also provided. A piezoelectric material includes a tungsten bronze structure metal oxide that includes metal elements which are barium, bismuth, and niobium, and tungsten. The metal elements satisfy following conditions on a molar basis: when Ba/Nb=a, 0.30≦a≦0.40, and when Bi/Nb=b, 0.012≦b≦0.084. The tungsten content on a metal basis is 0.40 to 3.00 parts by weight relative to 100 parts by weight of the tungsten bronze structure metal oxide. The tungsten bronze structure metal oxide has a c-axis orientation.

Piezoelectric ceramics and multi-layered piezoelectric ceramic components

A piezoelectric ceramic comprising as a main component an alkali-containing niobate-based perovskite structure expressed by a compositional formula (Li x Na y K 1-x-y ) a (Nb 1-z Ta z )O 3 (provided: 0.04<x≦0.1, 0≦y≦1, 0≦z≦0.4, and 0.95≦a≦1.005); wherein a crystal phase or an amorphous phase containing Si and K is made present at a grain boundary or a grain boundary triple point of a plurality of crystal grains constituting the piezoelectric ceramic.

CERAMIC COMPOSITION AND A LAMINATED CERAMIC ELECTRONIC COMPONENT INCLUDING THE SAME THEREOF

[Problems] To provide a ceramic composition that retains a high insulation resistance after being fired in a reductive atmosphere to form a laminated body. 1. A ceramic composition comprising: (NaK)(NbTa)O(0≦x≦1.0 , 0.3 Подробнее

Solid lithium ion conducting electrolytes and methods of preparation

A composition comprised of nanoparticles of lithium ion conducting solid oxide material, wherein the solid oxide material is comprised of lithium ions, and at least one type of metal ion selected from pentavalent metal ions and trivalent lanthanide metal ions. Solution methods useful for synthesizing these solid oxide materials, as well as precursor solutions and components thereof, are also described. The solid oxide materials are incorporated as electrolytes into lithium ion batteries.

Dielectric Ceramic Material and Multilayer Ceramic Capacitor Using the Same

A dielectric ceramic material comprises a primary component of barium titanate (BaTiO 3 ) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite (LiTaO3), barium cerate (BaCeO 3 ), sodium metaniobate (NaNbO 3 ) and the combinations thereof.

PROCESS FOR PRODUCING A PURE-PHASE MULTISUBSTANCE SYSTEM, A CERAMIC MATERIAL BASED ON THE PURE-PHASE MULTISUBSTANCE SYSTEM, A SHAPED BODY, AND A COMPOSITE FORMED THEREFROM

A process for producing a homogenous multi compound system which is hydroxide- and/or oxide-based includes a first alternative process comprising providing a first and a second refractory metal in respective hydrofluoric solutions, and mixing the first and second hydrofluoric solutions to provide a mixed hydrofluoric solution comprising a dissolved first and second refractory metal. A second alternative process comprises dissolving the first and the second refractory metal in an alternative mixed hydrofluoric solution. The mixed hydrofluoric solution or the alternative mixed hydrofluoric solution is precipitated with a precipitant to provide a solids mixture in a suspension. The first and second refractory metal is from the group consisting of Mo, W, Nb, Re, Zr, Hf, V, Sb, Si, Al, and Ta. The first and second refractory metal are different. At least one of the first and second refractory metal is provided as a fluoro and/or as an oxyfluoro complex. 126-. (canceled)27. A process for producing a multi compound system which is homogeneous and which is at least one of hydroxide-based and oxide-based , the process comprising: providing a first refractory metal in a first hydrofluoric solution,', 'providing a second refractory metal in a second hydrofluoric solution, and', 'mixing the first hydrofluoric solution and the second hydrofluoric solution so as to provide a mixed hydrofluoric solution comprising a dissolved first refractory metal and a dissolved second refractory metal,, 'a first alternative process which comprisesor 'dissolving the first refractory metal and the second refractory metal in an alternative mixed hydrofluoric solution; and', 'a second alternative process which comprisesprecipitating the mixed hydrofluoric solution or the alternative mixed hydrofluoric solution with a precipitant so as to provide a solids mixture in a suspension, the first refractory metal is from the group consisting of Mo, W, Nb, Re, Zr, Hf, V, Sb, Si, Al, and Ta,', 'the second ...

Piezoelectric porcelain composition

Provided is a Sr 2-x Ca x NaNb 5 O 15 type piezoelectric ceramic composition wherein the inhibition of cracking and an improvement in the piezoelectric characteristics are attained by improving the composition uniformity and the microstructure uniformity. In the basic Sr 2-x Ca x NaNb 5 O 15 composition, the (Sr, Ca)/Na ratio is changed, whereby the occupancies of Sr, Ca and Na in lattices which constitute the tungsten-bronze type structure and into which Sr, Ca, and Na can enter are reduced to facilitate the entrance of Sr into the lattices and thus inhibit the formation of a secondary phase. Further, a predetermined amount of Al and/or Si is added to lower the sintering temperature and to make the microstructure uniform. Additionally, a predetermined amount of Mn is added to make the polarization easy.

Translucent polycrystalline material and manufacturing method thereof

Provided is a method for manufacturing a translucent polycrystalline material with optical properties continuously varying in the material. A slurry including single crystal grains that are acted upon by a force when placed in a magnetic field is immobilized in a gradient magnetic field with a spatially varying magnetic flux density and then sintered. For example, where a slurry including single crystal grains of YAG doped with Er and single crystal grains of YAG undoped with a rare earth material is immobilized in the gradient magnetic field, the region with a strong magnetic field becomes a laser oscillation region that is rich in Er-doped YAG, whereas the region with a weak magnetic field becomes a translucent region rich in YAG undoped with a rare earth material. A polycrystalline material having a core with laser oscillations and a guide surrounding the core are obtained at once.

Piezoelectric material, piezoelectric element, liquid discharge head, ultrasonic motor, and dust removing device

Provided is a piezoelectric material which has satisfactory insulation property and piezoelectric property and which does not contain lead and potassium. The piezoelectric material includes a perovskite-type metal oxide that is represented by the following general formula (1): (Na x Ba 1-y )(Nb y Ti 1-y )O 3   General formula (1) where relationships of 0.80≦x≦0.95 and 0.85≦y≦0.95 are satisfied, and y×0.05 mol % or more to y×2 mol % or less of copper with respect to 1 mol of the perovskite-type metal oxide.

Alkali niobate-based piezoelectric material and a method for making the same

An alkali niobate-based piezoelectric material having the general formula {(K 1-a Na a ) 1-b Li b }(Nb 1-c-d Ta c Sb d )O 3 +x mol % Ba n TiO 3 +y mol % CuO, where 0≦a≦0.9, 0≦b≦0.3, 0<c≦0.5, 0≦d≦0.1, 0.5≦x≦10.0, 0.1≦y≦8.0, and 0.9≦n≦1.2.

CERAMIC MATERIAL AND METHOD OF PREPARING THE SAME

A ceramic material, including: BaWO-xMCO-yBaO-zBO-wSiO, where x=0-0.2 mole, y=0-0.05 mole, z=0-0.2 mole, w=0-0.1 mole, M represents an alkali metal ion selected from Li, K, Na, and x, y, z, and w are not zero at the same time. 1. A ceramic material , comprising: BaWO-xMCO-yBaO-zBO-wSiO , wherein x=0-0.2 mole , y=0-0.05 mole , z=0-0.2 mole , w=0-0.1 mole , M represents an alkali metal ion selected from Li , K , Na , and x , y , z , and w are not zero at the same time.2. A method , comprising:{'sub': 3', '3', '2', '3', '2', '3', '2', '4', '2', '3', '2', '3', '2, 'sup': +', '+', '+, '1) weighing and mixing BaCO, WO, MCO, BOand SiObased on a chemical formula BaWO-xMCO-yBaO-zBO-wSiO, wherein x=0-0.2 mole, y=0-0.05 mole, z=0-0.2 mole, w=0-0.1 mole, M represents an alkali metal ion selected from Li, K, Na, and x, y, z, and w are not zero at the same time, to yield a first powder;'}2) mixing the first powder obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:5:1-2, ball-milling for 4-7 h, drying at 80-120° C., sieving with a 40-60 mesh sieve, calcining in air atmosphere at 700-900° C. for 2-4 h, to yield a second powder;3) mixing the second powder obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:5:1-2, ball-milling for 3-6 h, drying, to yield a third powder, and adding a binder to the third powder; and4) compression molding a resulting product obtained in 3) under a pressure of 20 megapascal, drying at 400-500° C. and sintering at 850° C.-900° C. for 0.5-2 h.3. The method of claim 2 , wherein the binder is an acrylic solution. Pursuant to 35 U.S.C. § 119 and the Paris Convention Treaty, this application claims foreign priority to Chinese Patent Application No. 201910603226.3 filed Jul. 5, 2019, the contents of which, including any intervening amendments thereto, are incorporated herein by reference. Inquiries from the public to applicants or assignees concerning this document or the related applications ...

OXIDE SINTERED BODY AND TRANSPARENT CONDUCTIVE OXIDE FILM

An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013. 1. A transparent conductive oxide film , comprising:an oxide including indium, hafnium, tantalum, and oxygen as constituent elements,wherein the oxide satisfies that an atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and that an atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013, where In, Hf and Ta are indium, hafnium, and tantalum, respectively.2. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.005 to 0.025.3. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.007 to 0.021.4. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.001 to 0.010.5. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.003 to 0.010.6. The transparent conductive oxide film according to claim 1 , wherein the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.005 to 0.025 claim 1 , and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.001 to 0.010. The present application is a divisional of and claims the benefit of priority to U.S. application Ser. No. 16/078,488, filed Aug. 21, 2018, which is the National Stage of the International Patent Application No. PCT/JP2017/006045, filed Feb. 20, 2017, which is based upon and claims the benefit of priority to Japanese Patent Application Nos. 2016-031403, filed Feb. 22, 2016, and 2016-223540, filed Nov. 16, 2016. The entire contents of all of the above applications are incorporated herein by reference.The present invention relates to an oxide sintered body, a sputtering ...

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 1123-. (canceled)124. A multilayer , comprising:a first layer comprising an unsintered lithium-stuffed garnet polycrystalline thin film, wherein the thickness of the first layer is less than 100 μm and greater than 10 nm; anda second layer comprising a metal foil or metal powder, wherein the second layer is in contact with the first layer, and wherein the metal foil or metal powder comprises a metal selected from nickel (Ni), copper (Cu), an alloy thereof, and a combination thereof.125. The multilayer of claim 124 , further comprising a third layer comprising an unsintered lithium-stuffed garnet polycrystalline thin film claim 124 , wherein the thickness of the third layer is less than 100 μm and greater than 10 nm claim 124 , wherein the second layer is between and in contact with the first ...

Hard sintered body

The present invention provides a sintered body containing W and WC, having excellent hardness, strength, compactness, and corrosion resistance, without containing W 2 C, and capable of being used for the purpose of a cutting tool or a glass molding die, or a seal ring. There is provided a sintered body containing 4 to 50 vol % of tungsten metal as binder phases, 50 to 95 vol % of tungsten carbide (WC), and 0.5 to 5.0 vol % of tungsten oxide (WO 2 ), in which the tungsten oxide (WO 2 ) has an average grain size of 5 nm to 150 nm and is present in a sintered body structure at an average density of 5 to 20 particles/μm 2 .

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT

A dielectric composition including a complex oxide containing bismuth, zinc, and niobium, includes a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase. When the complex oxide is represented by a composition formula BiZnNbO, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2. 19-. (canceled)10. A dielectric composition comprising a complex oxide containing bismuth , zinc , and niobium , whereinthe dielectric composition comprises a crystal phase formed of the complex oxide and having a pyrochlore type crystal structure, and an amorphous phase, and{'sub': x', 'y', 'z', '1.75+δ, 'the complex oxide is represented by a composition formula BiZnNbO, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2.'}11. The dielectric composition according to claim 10 , whereinthe amorphous phase has the same composition as the complex oxide.12. A dielectric composition comprising a complex oxide containing bismuth claim 10 , zinc claim 10 , and niobium claim 10 , wherein{'sub': x', 'y', 'z', '1.75+δ, 'the complex oxide is represented by a composition formula BiZnNbO, in which x, y, and z satisfy relations of x+y+z=1.00, 0.20≤y≤0.50, and 2/3≤x/z≤3/2, and'}in an X-ray diffraction chart of the dielectric composition obtained by an X-ray diffraction measurement using a Cu-Kα ray as an X-ray source, a half-value width of a diffraction peak of a (222) plane that appears in a range of a diffraction angle 2 θ of 27° or more and 30° or less is 0.35° or more and 2.0° or less.13. The dielectric composition according to claim 12 , whereinthe dielectric composition comprises a crystal phase having a pyrochlore type crystal structure, and an amorphous phase.14. The dielectric composition according to claim 10 , whereinsatisfies a relation of 0.30≤y≤0.50.15. The dielectric composition according to claim 12 , whereiny satisfies a relation of 0.30≤y≤0.50.16. The dielectric ...

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): Na x K (1-x) NbO 3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na + ion and K + ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

Method for Obtaining Lead-free Piezoelectric Materials and Corresponding Lead-free Piezoelectric Materials

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants dand different Curie temperatures Tin the process. 1. A method for obtaining lead-free piezoelectric materials , comprising:{'b': '100', 'Step S, adjusting the T/O phase boundary of a first lead-free piezoelectric materialfor the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature or to be near the service temperature of the material by doping, wherein the near the service temperature comprises any one of the following: −20° C.-40° C., above 40° C. or below −20° C.;{'b': '200', 'Step S, further adjusting the C/T phase boundary and the O/R phase boundaryfurther adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and{'b': '300', 'Step S, obtaining second lead-free piezoelectric materials{'sub': 33', 'C, ' ...

STRONTIUM MAGNESIUM MOLYBDENUM OXIDE MATERIAL HAVING DOUBLE PEROVSKITE STRUCTURE AND METHOD FOR PREPARING THE SAME

The present invention relates to a strontium magnesium molybdenum oxide material having perovskite structure and the method for preparing the same. Citric acid is adopted as the chelating agent. By using sol-gel pyrolysis and replacing a portion of strontium in SrMgMoOby cerium and a portion of magnesium by copper, a material with a chemical formula of SrCeMgCuMoOis produced, where 0≦x<2, 0 Подробнее

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 1. A composition comprising a lithium stuffed garnet and AlO , wherein the lithium-stuffed garnet is characterized by the empirical formula{'sub': A', 'B', 'C', 'D', 'E', 'F, 'LiLaM′M″ZrO, wherein 4 Подробнее

Sodium niobate powder, method of manufacturing a sodium niobate powder, plate-like particle, method of manufacturing a plate-like particle, and method of manufacturing an oriented ceramics

Provided are methods of manufacturing an oriented ceramics containing sodium niobate and a raw material thereof. Specifically, provided is a sodium niobate powder, including cuboidal sodium niobate particles having an average side length of 0.1 μm or more to 100 μm or less, at least one face of the cuboid including a (100) plane in pseudo-cubic notation, in which the sodium niobate powder has a perovskite single-phase structure.

Low-K And Mid-K LTCC Dielectric Compositions And Devices

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-tungsten-silicon host. 1. A composition comprising a mixture of precursor materials that , upon firing , forms a lead-free and cadmium-free dielectric material comprising a barium-tungsten-silicon oxide host material.2. The composition according to claim 1 , wherein the dielectric material exhibits a dielectric constant of 1 to 50.3. A host material comprising:(i) 30-50 wt % BaO,{'sub': '3', '(ii) 45-65 wt % WO,'}{'sub': '2', '(iii) 1-10 wt % SiO,'}(iv) no lead, and(v) no cadmium.7. A lead-free and cadmium-free composition comprising a mixture of precursors that claim 1 , upon firing claim 1 , forms a lead-free and cadmium-free dielectric material comprising:(a) 10-55 wt % BaO,{'sub': '3', '(b) 15-60 wt % WO,'}{'sub': '2', '(c) 0.5-15 wt % SiO,'}(d) 0-27 wt % CaO,{'sub': '2', '(e) 0-35 wt % TiO,'}(f) 0-15 wt % SrO,{'sub': 2', '3, '(g) 0.05-5 wt % BO,'}(h) 0.05-5 wt % Li2O,(i) 0-5 wt % LiF,(j) 0-5 wt % CuO, and(k) 0-10 wt % ZnO.810-. (canceled)11. An electric or electronic component comprising claim 4 , prior to firing claim 4 , the lead-free and cadmium-free dielectric material of claim 4 , together with a conductive paste comprising:a. 60-90 wt % Ag+Pd+Pt+Au,b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,c. 0.5-10 wt % of at least one glass frit, andd. 10-40 wt % of an organic portion.12. The electric or electronic component of claim 11 , wherein the electric or electronic component is selected from the group consisting of high Q resonators claim 11 , electro-magnetic interference filter claim 11 , band pass filters claim 11 , wireless packaging systems claim 11 , and combinations thereof.13. A method of forming an electronic component comprising:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(a1) applying dielectric ...

Polycrystalline dielectric thin film and capacitor element

A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan δ. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n≥0.7.

INFRARED ABSORPTION MATERIAL, METHOD FOR FABRICATING THE SAME, AND THERMAL ISOLATION STRUCTURE EMPLOYING THE SAME

The disclosure provides an infrared absorption material, a method for fabricating the same, and a thermal isolation structure employing the same. The infrared absorption material includes a tungsten bronze complex having a formula of MMWO, wherein 0.6≦x≦0.8, 0.2≦y≦0.33, 0.8≦x+y<1, and 2 Подробнее

Scheelite Microwave Dielectric Ceramic Material and Preparation Method Thereof

An embodiment of the present invention provides a scheelite microwave dielectric ceramic material. For example, a structure expression of the scheelite microwave dielectric ceramic material can be Bi(VInMo)MoO. In this embodiment, 0.06≦x≦0.12 An embodiment of the present invention further provides a method for preparing a scheelite microwave dielectric ceramic material. 1. A scheelite microwave dielectric ceramic material , wherein a structure expression of the scheelite microwave dielectric ceramic material is{'br': None, 'sub': 1-x', 'x/3', '2x/3', '4, 'Bi(VInMo)MoO,'}where 0.06≦x≦0.12.2. The scheelite microwave dielectric ceramic material according to claim 1 , wherein 0.08≦x≦0.10.3. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a microwave dielectric constant εof the scheelite microwave dielectric ceramic material is 70-75 claim 1 , a quality factor value Q×f is 9230 GHz-10110 GHz claim 1 , and a temperature coefficient of resonant frequency τis −210 ppm/° C. to +135 ppm/° C.4. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a microwave dielectric constant εof the scheelite microwave dielectric ceramic material is 70-75.5. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a quality factor value Q×f is 9230 GHz-10110 GHz.6. The scheelite microwave dielectric ceramic material according to claim 1 , wherein a temperature coefficient of resonant frequency τis −210 ppm/° C. to +135 ppm/° C.7. A method for preparing a scheelite microwave dielectric ceramic material claim 1 , the method comprising:{'sub': 2', '5', '2', '3', '3', '2', '3', 'Bi', '1-x', 'x/3', '2x/3', '4, 'mixing the materials that include VO, InO, MoO, and BiOaccording to a stoichiometry ratio consistent with a general formula (VInMo)MoO, where 0.06≦x≦0.12;'}ball-milling the materials for 3 to 6 hours;drying the ball-milled materials at 100° C-200° C.;sieving the dried ball-milled materials; ...

Oxide sintered body and semiconductor device

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

UNLEADED PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING SAME, DEVICE, AND METHOD FOR MANUFACTURING UNLEADED PIEZOELECTRIC CERAMIC COMPOSITION

A lead-free piezoelectric ceramic composition includes a first crystal phase made of an alkali niobate/tantalate type perovskite oxide having piezoelectric properties, and a second crystal phase made of an M-Ti—O spinel compound (where the element M is a monovalent to quadrivalent element). 1. A lead-free piezoelectric ceramic composition , comprising:a main phase comprising a first crystal phase comprising an alkali niobate/tantalate type perovskite oxide having piezoelectric properties; anda subphase comprising a second crystal phase comprising an M-Ti—O spinel compound (where the element M is a monovalent to quadrivalent element).2. The lead-free piezoelectric ceramic composition according to claim 1 ,wherein the element M comprises at least one metallic element selected from the group consisting of Li, Mg, Al, Sc, Cr, Mn, Fe, Co, Ni, Zn, Ga, Y, and Zr.3. The lead-free piezoelectric ceramic composition according to claim 1 ,{'sub': x', 'y, 'wherein the M-Ti—O spinel compound is represented by a compositional formula: MTiO(where the coefficients x and y are relative values when a content of Ti is taken as 1), and'}wherein the coefficient x satisfies 0.5≦x≦5.0.4. The lead-free piezoelectric ceramic composition according to claim 3 ,wherein the coefficient y satisfies 2≦y≦8.5. The lead-free piezoelectric ceramic composition according to claim 1 ,wherein the subphase fills a hole formed in the main phase.6. The lead-free piezoelectric ceramic composition according to claim 1 ,wherein the contained rate of the second crystal phase in the lead-free piezoelectric ceramic composition is any one of:(i) 0.5 vol % to 5.0 vol %;(ii) 0.5 vol % to 2.5 vol %; and(iii) 1.0 vol % to 2.0 vol %.7. The lead-free piezoelectric ceramic composition according to claim 1 ,wherein the M-Ti—O spinel compound comprises two or more metallic elements as the element M.8. The lead-free piezoelectric ceramic composition according to claim 1 ,{'sub': 3', '5', '15, 'wherein the subphase comprises ...

NANOFIBERS

The present invention relates to nanofibers. In particular, the present invention relates to potassium niobate nanofibers. In an aspect of the present invention, there is provided a method of preparing the nanofibers, the method comprising: (a) dissolving niobium chloride and potassium sorbate in a solvent to obtain a first solution; (b) removing chloride precipitates formed from the first solution; (c) adding a polymer, for example polymethylmethacrylate or polyvinylpyrrolidone to the solution to obtain a second spinnable solution; and (d) electrospinning the spinnable solution to produce the fibers. The application also discloses the application of such nanofibers in the manufacture of a humidity sensor device by sputtering a metal such as Tantalum on top of the nanofibers. 1. A method of preparing fibers , the method comprising:(a) dissolving niobium chloride and potassium sorbate in a solvent to obtain a first solution;(b) removing chloride precipitates formed from the first solution;(c) adding a polymer to the solution to obtain a second spinnable solution; and(d) electrospinning the spinnable solution to produce the fibers.2. The method according to claim 1 , wherein the polymer is any one selected from the group comprising: polyvinylpyrrolidone claim 1 , poly(methyl methacrylate) claim 1 , cellulose acetate claim 1 , polyacrylonitrile claim 1 , polyvinyl alcohol and polyethylene oxide.3. The method according to claim 1 , wherein the solvent is an alcohol.4. The method according to claim 3 , wherein the alcohol is any one selected from the group comprising: methanol claim 3 , ethanol and 2-methoxyethanol dimethylformamide.5. The method according to claim 1 , wherein the molar ratio between potassium and niobium after removing the chloride precipitates is about 1.6. The method according to claim 1 , wherein the electrospinning is carried out by ejecting the spinnable solution from a plastic syringe at a constant feed rate of 0.60 ml/hour.7. The method according ...

SODIUM NIOBATE POWDER, METHOD FOR PRODUCING THE SAME, METHOD FOR PRODUCING CERAMIC, AND PIEZOELECTRIC ELEMENT

A sodium niobate powder includes sodium niobate particles having a shape of a cuboid and having a side average length of 0.1 μm or more and 100 μm or less, wherein at least one face of each of the sodium niobate particles is a (100) plane in the pseudocubic notation and a moisture content of the sodium niobate powder is 0.15 mass % or less. A method for producing a ceramic using the sodium niobate powder is provided. A method for producing a sodium niobate powder includes a step of holding an aqueous alkali dispersion liquid containing a niobium component and a sodium component at a pressure exceeding 0.1 MPa, a step of isolating a solid matter from the aqueous dispersion liquid after the holding, and a step of heat treating the solid matter at 500° C. to 700° C. 1. A sodium niobate powder comprising sodium niobate cuboidal particles having a shape of a cuboid and having a side average length of 0.1 μm or more and 100 μm or less ,wherein at least one face of each of the sodium niobate cuboidal particles is a (100) plane in the pseudocubic notation, andan amount of physically adsorbed water and constitution water of the sodium niobate powder is 0.15 mass % or less.2. The sodium niobate powder according to claim 1 , {'br': None, 'sub': 1+x', '3+x/2, 'i': '≦x≦', 'NaNbO(−0.10.1).\u2003\u2003General formula (1)'}, 'wherein the sodium niobate cuboidal particles are represented by general formula (1) below3. The sodium niobate powder according to or claim 1 , wherein the ratio L/Lof a maximum side length Lto a minimum side length Lof the sodium niobate cuboidal particles is 3 or less.4. A method for producing a sodium niobate powder claim 1 , the method at least comprising:a step of holding an aqueous alkali dispersion liquid containing at least a niobium component and a sodium component at a pressure exceeding 0.1 MPa;a step of isolating a solid matter from the aqueous dispersion liquid after the holding; anda step of heat treating the solid matter at 500° C. or more and ...

Dielectric composition and electronic component

Provided is a dielectric composition exhibiting a high strength and a high specific dielectric constant. The dielectric composition contains composite oxide particles having a composition formula represented by (Sr x Ba 1-x ) y Nb 2 O 5+y and an Al-based segregation phase. The Al segregation phase has niobium, aluminum, and oxygen.

Dielectric Ceramic Composition and Ceramic Capacitor Using the Same

a dielectric ceramic composition comprising a main component comprising an oxide represented by:UaXbYcZd((Ca1-x-ySrxMy)m(Zr1-u-vTiuHfv)O3)1-a-b-c-dwherein the elements defined by U, X, Y, Z and M and subscripts a, b, c, d, x, y, m, u and v are defined.

PERSONALIZED INVESTMENT PORTFOLIO

A method for establishing a personalized investment portfolio comprising the steps of starting from a client's investor behavior and experience establishing a client profile based on questions regarding the client's behavior of daily life and investment approach and experience to provide a behavioral profile; constructing a computer program model to determine optimal asset class allocation for each client profile covering a wide range of assets, including real estate, insurance, arts and traditional financial asset classes as a holistic asset allocation; and establishing a model of a personalized ranking of financial investment products for a client investor, based on product characteristics and investor profile with a best fit investment program. 1. A method for determining a behavioral profile of a potential financial investor's personal preferences and degree of risk aversion for use in appropriately and personally acceptably strategizing investment opportunities , comprising the steps of:{'claim-text': ['a. question choices have been predetermined to be indicative of characteristics of personal preferences based on a probability scale,', 'b. question choices are selected and couched to be non-invasive, inoffensive and discrete to avoid skewed deliberate choices,', 'c. some question choices relate to aspects of investment strategies with different answers having been predetermined as being indicative of personal preference choices and degree of risk aversion;'], '#text': 'a. crafting a questionnaire with multiple choice questions concerning personal choices and opinions regarding common daily life matters and social interactions, wherein:'}b. having the potential financial investor provide answers to the questionnaire; andc. recording and evaluating the questionnaire answers with a scoring matrix and an algorithm which provides predetermined results of a behavioral profile of the potential investor based on a probability analysis based on previously determined ...

Piezoelectric ceramic, method for producing piezoelectric ceramic, and piezoelectric ceramic electronic component

A piezoelectric ceramic that contains an alkali niobate compound as its main ingredient. The alkali niobate compound has a perovskite crystal structure represented by A m BO 3 and contains an alkali metal. There exists Sn in part of site A, and Zr in part of site B. A radial distribution function obtained from a K-edge X-ray absorption spectrum of Sn has a first peak intensity P1 at a first distance from a Sn atom and a second peak intensity P2 at a second distance from the Sn atom. The second distance is greater than the first distance, and the peak intensity ratio P1/P2 is 2.7 or less.

Anti-icing coating for power transmission lines

Provided are methods and systems for forming piezoelectric coatings on power line cables using sol-gel materials. A cable may be fed through a container with a sol-gel material having a piezoelectric material to form an uncured layer on the surface of the cable. The layer is then cured using, for example, infrared, ultraviolet, and/or other types of radiation. The cable may be suspended in a coating system such that the uncured layer does not touch any components of the system until the layer is adequately cured. Piezoelectric characteristics of the cured layer may be tested in the system to provide a control feedback. The cured layer, which may be referred to as a piezoelectric coating, causes resistive heating at the outer surface of the cable during vibration of the cable due transmission of alternating currents and environmental factors.

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT

Provided is a dielectric composition exhibiting a high specific dielectric constant and a high resistivity even when fired in a reducing atmosphere. The dielectric composition contains a composite oxide having a composition represented by (SrBa)NbO, the crystal system of the composite oxide is tetragonal, and y in the composition formula is smaller than 1. 1. A dielectric composition comprising a composite oxide having a composition formula represented by (SrBa)NbO , wherein the crystal system of the composite oxide is tetragonal , and y in the composition formula is smaller than 1.2. The dielectric composition according to claim 1 , wherein the space group of the composite oxide is P4bm.3. The dielectric composition according to claim 1 , wherein x in the composition formula is 0.2 to 07.4. The dielectric composition according to claim 1 , wherein y in the composition formula is 0.95 or less.5. The dielectric composition according to claim 1 , further comprising a first subcomponent element claim 1 ,wherein the first subcomponent element is at least one selected from the group consisting of copper, zinc, palladium, tantalum, and tin.6. The dielectric composition according to claim 5 , wherein the first subcomponent element is contained in an amount of 10 parts by mole or less with respect to 100 parts by mole of niobium in the composite oxide.7. The dielectric composition according to claim 1 , comprising a second subcomponent element claim 1 ,wherein the second subcomponent element is at least one selected from the group consisting of gallium, potassium, molybdenum, boron, nickel, and zirconium.8. The dielectric composition according to claim 7 , wherein the second subcomponent element is contained in an amount of 10 parts by mole or less with respect to 100 parts by mole of niobium in the composite oxide.9. An electronic component claim 1 , comprising a dielectric layer containing the dielectric composition according to .10. A dielectric composition claim 1 , ...

METHOD FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION

Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance α from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C. 1. A method for producing a semiconductor ceramic composition which is a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO-based oxide is substituted by Bi and A (wherein A is at least one kind of Na , Li and K) , the method comprising:calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.;adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material;forming the raw material to which the oxide containing Ba and Ti was added; and thensintering the raw material to which the oxide containing Ba and Ti was added at a temperature of 1,300° C. to 1,450° C.2. The method for producing a semiconductor ceramic composition according to claim 1 , the method comprising:{'sub': 3', '3, 'preparing, as the raw material, a (BiA)TiO-based first raw material and a (BaR)[TiM]O(wherein R is at least one kind of rare earth elements including Y, and M is at least one kind of Nb, Ta and Sb)-based second raw material, respectively;'}calcining the first raw material at 700° C. to 950° C. and the second raw material at 900° C. to 1,300° C.;preparing a third raw material by mixing respective calcined materials;adding the ...

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Disclosed herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also disclosed herein are lithium-stuffed garnet thin films having fine grains therein. Also disclosed herein are methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also disclosed herein are methods for preparing dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also disclosed herein are sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 21. (canceled)22. A sintered film comprising:a first layer comprising a sintered lithium-stuffed garnet; anda second layer interfacing the first layer, the second layer comprising a sintered metal;wherein the sintered film thickness is less than 200 μm and greater than 1 nm.23. The film of claim 22 , wherein the lithium-stuffed garnet comprises at least one member selected from the group consisting of LiLaM′M″ZrO claim 22 , LiLaM′M″TaO claim 22 , and LiLaM′M″NbO claim 22 , wherein 4 Подробнее

Solid Electrolytic Capacitor with Improved Leakage Current

A capacitor assembly that is capable of exhibiting good electrical properties even under a variety of conditions is provided. More particularly, the capacitor contains a capacitor element that includes a sintered porous anode body, a dielectric that overlies the anode body, and a pre-coat layer that overlies the dielectric and is formed from an organometallic compound. A solid electrolyte overlies the pre-coat layer that contains an inner layer and an outer layer, wherein the inner layer is formed from an in situ-polymerized conductive polymer and the outer layer is formed from pre-polymerized conductive polymer particles. 1. A capacitor assembly comprising a capacitor element , the capacitor element comprising:a sintered porous anode body;a dielectric that overlies the anode body;a pre-coat layer that overlies the dielectric that is formed from an organometallic compound;a solid electrolyte that overlies the pre-coat layer, wherein the solid electrolyte contains an inner layer and an outer layer, wherein the inner layer is formed from an in situ-polymerized conductive polymer and the outer layer is formed from pre-polymerized conductive polymer particles.2. The capacitor assembly of claim 1 , wherein the anode body includes tantalum and the dielectric includes tantalum pentoxide.4. The capacitor assembly of claim 3 , wherein M is silicon.5. The capacitor assembly of claim 4 , wherein the hydroxyalkyl is OCH.6. The capacitor assembly of claim 3 , wherein R claim 3 , R claim 3 , and Rare a hydroxyalkyl.7. The capacitor assembly of claim 1 , wherein the organometallic compound is 3-aminopropyltrimethoxysilane claim 1 , 3-aminopropyltriethoxysilane claim 1 , 3-aminopropylmethyldimethoxysilane claim 1 , 3-aminopropylmethyldiethoxysilane claim 1 , 3-(2-aminoethyl)aminopropyltrimethoxysilane claim 1 , 3-mercaptopropyltrimethoxysilane claim 1 , 3-mercaptopropyltriethoxysilane claim 1 , 3-mercaptopropylmethyldimethoxysilane claim 1 , 3-mercaptopropylmethyldiethoxysilane ...

Low temperature co-fireable dielectric materials

Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Piezoelectric composition and piezoelectric element

A piezoelectric composition containing: a complex oxide having a perovskite structure represented by a general formula of ABO3; copper; and one or more elements selected from the group consisting of chromium, nickel and zinc, in which in ABO3, an A-site element is potassium and a B-site element is niobium, or niobium and tantalum, with respect to 1 mol of the complex oxide, a content ratio of the copper is α mol % in terms of CuO, a content ratio of one or more elements selected from the group consisting of chromium, nickel and zinc is β mol % in terms of CrO3/2, NiO, ZnO, α satisfies a relationship of 0.2≤α≤2.5, and β satisfies a relationship of 0.2≤β≤2.0.

PIEZOELECTRIC COMPOSITION, PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, PIEZOELECTRIC TRANSFORMER, ULTRASONIC MOTOR, ULTRASONIC WAVE-GENERATING ELEMENT, AND FILTER ELEMENT

A piezoelectric composition containing: at least one or more elements selected from alkali metal elements; at least one or more elements selected from a group consisting of vanadium, niobium, and tantalum; copper or copper and germanium; and oxygen. The piezoelectric composition has a main phase, and a high Cu-concentration phase in which a content ratio of copper is higher than the main phase, and when a content ratio of oxygen in the high Cu-concentration phase is set as O, and a content ratio of copper is set as Cu, Oand Cusatisfy relationships of 51≤O≤60 and 2.0≤Cu≤15.

RARE EARTH TANTALATE CERAMIC RESISTING CORROSION OF LOW MELTING POINT OXIDE AND PREPARATION METHOD THEREFOR

The present disclosure discloses a rare earth tantalate ceramic resisting corrosion of a low melting point oxide. A general chemical formula of the ceramic is RETaO. A method for preparing the ceramic includes: weighing REOpowder and TaOpowder and adding to a solvent to mix, and ball milling the mixed solution with a ball mill to obtain powder A; drying the powder A, and sieving the powder A for a first time to obtain powder B; placing the powder B in a mold for compaction, pre-sintering the powder B to form a block C, cooling the block C to room temperature, grounding the block C with a grinder, and sieving the block C for a second time to obtain powder D; and sintering the powder D to obtain the rare earth tantalate ceramic. The ceramic has high density and strong corrosion resistance to low melting point oxides. 1. A rare earth tantalate ceramic resisting corrosion of a low melting point oxide , wherein a general chemical formula of the ceramic is RETaO , a crystal structure of the ceramic has a monoclinic phase , a lattice space group of the ceramic is l2(5) , and a density of the ceramic is greater than 98%.2. The rare earth tantalate ceramic resisting corrosion of the low melting point oxide according to claim 1 , wherein RE is one or a combination of Sm claim 1 , Eu claim 1 , Gd claim 1 , Dy claim 1 , Ho claim 1 , and Er.3. A method for preparing a rare earth tantalate ceramic resisting corrosion of a low melting point oxide claim 1 , wherein a general chemical formula of the ceramic is RETaO claim 1 , a crystal structure of the ceramic has a monoclinic phase claim 1 , a lattice space group of the ceramic is l2(5) claim 1 , and a density of the ceramic is greater than 98%; wherein the method comprising:{'sub': 2', '3', '2', '5, 'operation (1): weighing REOpowder and TaOpowder with a molar ratio of RE:Ta of 1:1 and adding to a solvent to mix, and ball milling the mixed solution with a ball mill to obtain powder A;'}operation (2): drying the powder A obtained ...

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT

A dielectric composition including a complex oxide represented by a general formula of ABCOas a main component, in which “A” at least includes Ba, “B” at least includes Zr, “C” at least includes Nb, “a” is 3.05 or more, and “b” is 1.01 or more. 1. A dielectric composition including a complex oxide represented by a general formula of ABCOas a main component , in which“A” at least includes Ba, “B” at least includes Zr, “C” at least includes Nb, “a” is 3.05 or more, and “b” is 1.01 or more.2. The dielectric composition according to claim 1 , wherein{'sub': 1-x', 'x', 'a', '1-y', '1-y', 'b', '1-z', 'z', '4', '15+α, 'the general formula is represented by (BaA1)(ZrB1)(NbC1)O, in which'}“A1” includes one or more selected from the group consisting of Mg, Ca, and Sr,“B1” includes one or more selected from the group consisting of Ti and Hf,“C1” includes Ta,“x” is 0.50 or less, “y” is 0.25 or less, and “z” is 0.50 or less.3. The dielectric composition according to claim 1 , wherein “a” is 3.10 or more.4. The dielectric composition according to claim 2 , wherein “a” is 3.10 or more.5. The dielectric composition according to claim 1 , wherein “b” is 1.05 or more.6. The dielectric composition according to claim 2 , wherein “b” is 1.05 or more.7. The dielectric composition according to claim 1 , wherein the dielectric composition includes an oxide including aluminum.8. The dielectric composition according to claim 2 , wherein the dielectric composition includes an oxide including aluminum.9. The dielectric composition according to claim 7 , wherein the oxide including aluminum is a complex oxide including Ba.10. The dielectric composition according to claim 8 , wherein the oxide including aluminum is a complex oxide including Ba.11. The dielectric composition according to claim 1 , wherein a density is 4.48 g/cmor more.12. An electronic component comprising a dielectric layer including the dielectric composition according to and an electrode layer including a base metal as a main ...

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT

A dielectric composition comprising a complex oxide represented by a general formula of ABCO and an oxide including aluminum, in which “A” at least includes Ba, “B” at least includes Zr, and “C” at least includes Nb, “a” is 2.50 or more and 3.50 or less, and “b” is 0.50 or more, and 1.50 or less. 1. A dielectric composition comprising a complex oxide represented by a general formula of ABCO and an oxide including aluminum , in which“A” at least includes Ba, “B” at least includes Zr, and “C” at least includes Nb,“a” is 2.50 or more and 3.50 or less, and “b” is 0.50 or more and 1.50 or less.2. The dielectric composition according to claim 1 , wherein the general formula is represented by (BaA1)(ZrB1)(NbC1)O claim 1 , in which“A1” includes one or more selected from the group consisting of Mg, Ca, and Sr,“B1” includes one or more selected from the group consisting of Ti and Hf,“C1” includes Ta,“x” is 0.50 or less, “y” is 0.50 or less, and “z” is 0.50 or less.3. The dielectric composition according to claim 1 , wherein the oxide including aluminum is a complex oxide including Ba.4. The dielectric composition according to claim 2 , wherein the oxide including aluminum is a complex oxide including Ba.5. The dielectric composition according to claim 1 , wherein a density of the dielectric composition is 4.40 g/cmor more.6. An electronic component comprising a dielectric layer including the dielectric composition according to claim 1 , and an electrode layer. The present invention relates to a dielectric composition and an electronic component having a dielectric layer constituted from the dielectric composition.An electronic circuit and a power supply circuit which are incorporated to an electronic device are mounted with many electronic components such as a multilayer ceramic capacitor which uses a dielectric property of dielectrics. As a material constituting the dielectrics of such electronic component (dielectric material), a barium titanate based dielectric composition ...

Methods of making high q modified materials for high frequency applications

Disclosed are embodiments of making a high Q ceramic material. The method includes providing Ba3CoTa2O9 and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the Ba3CoTa2O9 to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.

METHODS OF MAKING HIGH Q MODIFIED BARIUM-BASED MATERIALS FOR HIGH FREQUENCY APPLICATIONS

Disclosed are embodiments of making a high Q ceramic material. The method includes providing BaNiTaOand incorporating one of BaMgWO, BaLiTaWO, BaLiTaWO, BaMgWO, BaLaTaO, BaLiTaWO, BaLaLiWO, BaTaWO, BaLaMgWO, BaLaLiWO, SrLaTaO, and SrLaTaOinto the BaNiTaOto form a solid solution having a high Q value of greater than 12000 at about 10 GHz. 1. A method of making a high Q material comprising:{'sub': 3', '2', '9, 'providing BaNiTaO; and'}{'sub': 2', '6', '8', '5', '24', '8', '5', '24', '2', '6', '3', '3', '12', '8', '5', '24', '6', '4', '2', '12', '2', '2', '2', '12', '6', '3', '3', '12', '12', '3', '2', '9, 'incorporating one of BaMgWO, BaLiTaWO, BaLiTaWO, BaMgWO, BaLaTaO, BaLiTaWO, BaLaLiWO, BaTaWO, BaLaMgWO, BaLaLiWO, SrLaTaO, and SrLaTaOinto the BaNiTaOto form a solid solution having a high Q value of greater than 12000 at about 10 GHz.'}2. The method of wherein the solid solution does not include tin.3. The method of wherein the solid solution contains at least 95% BaNiTaO.4. The method of wherein the solid solution contains at least 97% BaNiTaO.5. The method of wherein the solid solution has a dielectric constant of at least 25.6. The method of further comprising incorporating MgTaOinto the BaNiTaO.7. The method of wherein the solid solution has a Q value of greater than 17000 at about 10 GHz.8. The method of further comprising incorporating the solid solution into a cellular base station.9. The method of further comprising incorporating the solid solution into a millimeter wave filter.10. The method of further comprising incorporating the solid solution into a collision avoidance system.11. The method of further comprising incorporating the solid solution into a resonator or isolator.12. A method of making a composite material claim 1 , the method comprising:{'sub': 3', '2', '9, 'providing BaNiTaO; and'}{'sub': 2', '6', '8', '5', '24', '8', '5', '24', '2', '6', '3', '3', '12', '8', '5', '24', '6', '4', '2', '12', '2', '2', '2', '12', '6', '3', '3', '12', '12', '3 ...

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 1. A composition comprising a lithium stuffed garnet and AlO , wherein the lithium-stuffed garnet is characterized by the empirical formula LiLaM′M″ZrO , wherein 4 Подробнее

EXTRACTION OF DIGITALLY PRINTED BUILD MATERIAL

In example implementations, a method for extracting layers of build material into a carrier. The method includes providing a layer of build material onto a bed. Portions of the layer of build material on the bed are digitally printed with a liquid functional material (LFM). The method repeats providing the layer of build material and digitally printing without applying energy to the LFM to define a structure in layers of build material on the bed. The layers of build material are extracted into a carrier and the carrier is removed. 1. A method , comprising:successively forming layers of a build material on a bed;selecting dispensing a liquid functional material (LFM) on each layer of the build material in accordance with a cross-section of an object to be formed, wherein the LFM facilitates binding of the build material under an application of energy but does not, by itself, bind the build material; andextracting the layers of build material into a carrier prior to the application of energy to bind the build material that received the LFM.2. The method of claim 1 , further comprisingplacing the carrier into a furnace;with the furnace, applying the energy to the build material in the carrier to bind the build material that received the LFM in all the successive layers to form the object within the carrier.3. The method of claim 2 , wherein all the build material that received LFM in all of the layers is bound together at a same time by the application of energy from the furnace.4. The method of claim 1 , further comprising reacting the LFM with the build material that receives the LFM claim 1 , the reaction lowering an amount of energy required to bind the build material that has reacted with the LFM.5. The method of claim 2 , further comprising using the LFM as an energy susceptor to energy applied by the furnace to induce binding of the build material that received the LFM.6. The method of claim 1 , further comprising forming a bottom-most and top-most layer of ...

LIGHT-EMITTING CERAMIC AND WAVELENGTH CONVERSION DEVICE

A light-emitting ceramic that includes a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of the general formula M1M2M3O, wherein M1 is at least one of La, Y, Gd, Yb, and Lu, M2 is at least one of Zr, Sn, and Hf, M3 is at least one of Ta, Nb, and Sb, X, Y, Z, and W are positive numbers that maintain electrical neutrality, X+Y+Z=2.0, 0.005≤Z≤0.2, and 3X+4Y+5Z is 7.02 or less. 1. A light-emitting ceramic comprising:{'sub': x', 'y', 'z', 'w, 'a pyrochlore type compound that contains 0.01 mol % or more of Bi with respect to 100 mol % of a general formula M1M2M3O, wherein'}M1 is at least one element selected from the group consisting of La, Y, Gd, Yb, and Lu,M2 is at least one element selected from the group consisting of Zr, Sn, and Hf,M3 is at least one element selected from the group consisting of Ta, Nb, and Sb,X, Y, Z, and W are positive numbers that maintain electrical neutrality,X+Y+Z=2.0,0.005≤Z 0.2, and3X+4Y+5Z is 7.02 or less.2. The light-emitting ceramic according to claim 1 , wherein 3X+4Y+5Z is 6.92 to 7.02.3. The light-emitting ceramic according to claim 2 , wherein 0.02≤Z≤0.2.4. The light-emitting ceramic according to claim 1 , wherein 0.02≤Z≤0.2.5. The light-emitting ceramic according to claim 2 , wherein 0.05≤Z≤0.2.6. The light-emitting ceramic according to claim 1 , wherein 0.05≤Z≤0.2.7. The light-emitting ceramic according to claim 1 , wherein the pyrochlore type compound contains 5 mol % or less of the Bi with respect to 100 mol % of the general formula M1M2M3O.8. The light-emitting ceramic according to claim 1 , wherein the pyrochlore type compound contains 0.05 mol % or more of the Bi with respect to 100 mol % of the general formula M1M2M3O.9. The light-emitting ceramic according to claim 1 , wherein the pyrochlore type compound contains 3 mol % or less of the Bi with respect to 100 mol % of the general formula M1M2M3O.10. The light-emitting ceramic according to claim 1 , wherein the pyrochlore type compound ...

DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT

A dielectric composition contains a complex oxide represented by the formula of xAO-yB′O-zB″Oas the main component, wherein A represents at least one element selected from the group made of Ba, Ca and Sr, B′ represents at least one element selected from the group made of Mg, Zn and Ni, B″ represents at least one element selected from the group made of Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.375≦x≦0.563, 0.250≦y≦0.500, and x/3≦z≦x/3+1/9. An electronic component using the dielectric composition is also provided. 1. A dielectric composition comprising a complex oxide represented by the formula of xAO-yB′O-zB″Oas the main component , wherein ,A represents at least one element selected from the group consisting of Ba, Ca and Sr,B′ represents at least one element selected from the group consisting of Mg, Zn and Ni,B″ represents at least one element selected from the group consisting of Nb and Ta, and [{'br': None, 'i': 'x+y+z=', '1.000,'}, {'br': None, 'i': 'x≦', '0.375≦0.563,'}, {'br': None, 'i': 'y≦', '0.250≦0.500, and'}, {'br': None, 'i': x/', 'z≦x/, '3≦3+1/9.'}], 'x, y and z meet the following conditions,'}2. The dielectric composition of wherein claim 1 , [{'br': None, 'i': 'x+y+z=', '1.000,'}, {'br': None, 'i': 'x≦', '0.425≦0.525,'}, {'br': None, 'i': 'y≦', '0.275≦0.409, and'}, {'br': None, 'i': x/', 'z≦x/, '3+0.025≦3+0.081.'}], 'a complex oxide represented by the formula in which x, y and z in the formula meet the following conditions is contained as the main component,'}3. An electronic component comprising the dielectric composition of .4. An electronic component comprising the dielectric composition of . The present invention relates to a dielectric composition and an electronic component.The MIMO (Multi-Input Multi-Output) technique which simultaneously utilizes a plurality of frequency bands has been put into use so as to provide a communication with a higher speed and a larger capacity in mobile communicating equipment which is ...

DIELECTRIC COMPOSITION, DIELECTRIC ELEMENT, ELECTRONIC COMPONENT, AND MULTILAYER ELECTRONIC COMPONENT

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (SrBaCa)R(TiZrSi)(NbTa)O, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0≤s≤1.00, 0≤t≤1.00, 0≤s+t≤1.00, 0≤x≤3.00, 0.01≤a≤0.98, 0≤b≤1.00, 0.02≤d≤0.15, and 0.03≤a+d≤1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component. 1. A dielectric composition comprising , as a main component , a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZrSi)(NbTa)O ,wherein the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, ands, t, x, a, b, and d satisfy0≤s≤1.00,0≤t≤1.00,0≤s+t≤1.00,0≤x≤3.00,0.01≤a≤0.98,0≤b≤1.00,0.02≤d≤0.15, and0.03≤a+d≤1.00.2. The dielectric composition according to claim 1 , wherein at least one selected from Mn claim 1 , Mg claim 1 , Co claim 1 , V claim 1 , W claim 1 , Mo claim 1 , Li claim 1 , B claim 1 , and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.3. The dielectric composition according to claim 1 , wherein a substitution amount a of Zr in the chemical formula is 0.50≤a≤0.98.4. A dielectric element comprising the dielectric composition according to .5. An electronic component comprising a dielectric layer comprising the dielectric composition according to .6. A multilayer electronic component comprising a multilayer portion wherein a dielectric layer comprising the dielectric composition according to and an internal electrode layer are alternately stacked. The present invention relates to a dielectric composition, a dielectric element, an ...

Transparent conductive thin film

Disclosed is a transparent conductive thin film and an electronic device including the same. The transparent conductive thin film may include a perovskite vanadium oxide represented by Chemical Formula 1, A 1-x VO 3±δ   [Chemical Formula 1] wherein A is a Group II element, 0 ≦x<1, and δ is a number necessary for charge balance in the oxide.

DIELECTRIC COMPOSITION, DIELECTRIC ELEMENT, ELECTRONIC COMPONENT, AND MULTILAYER ELECTRONIC COMPONENT

A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. A dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZr)(NbTa)O, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70≤s≤1.00, 0≤t≤0.30, 0.70≤s+t≤1.00, 0≤x≤0.50, 0.10≤a≤1.00, and 0≤b≤1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al arc contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component. 1. A dielectric composition comprising , as a main component , a tungsten bronze type composite oxide represented by a chemical formula (SrBaCa)R(TiZr)(NbTa)O ,wherein the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.70≤s≤1.00, 0≤t≤0.30, 0.70≤s+t≤1.00, 0≤x≤0.50, 0.10≤a≤1.00, and 0≤b≤1.00.2. The dielectric composition according to claim 1 , wherein at least one selected from Mn claim 1 , Mg claim 1 , Co claim 1 , V claim 1 , W claim 1 , Mo claim 1 , Si claim 1 , Li claim 1 , B claim 1 , and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.3. The dielectric composition according to claim 1 , wherein a substitution amount a of Zr in the chemical formula is 0.50≤a≤1.00.4. A dielectric element comprising the dielectric composition according to .5. An electronic component comprising a dielectric layer comprising the dielectric composition according to .6. A multilayer electronic component comprising a multilayer portion wherein a dielectric layer comprising the dielectric composition according to and an internal electrode layer are stacked alternately. The present invention relates to a dielectric composition, ...

Ceramic material

The present disclosure provides a ceramic material containing a vanadium oxide, and 50 to 400 ppm by mass of nitrogen with respect to the vanadium oxide. The ceramic material according to the present disclosure less varies in the amount of heat absorption. A cooling device comprising the ceramic material is also provided.

METHODS OF MAKING HIGH Q MODIFIED BARIUM MAGNESIUM TANTALATE

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of BaMgWO, BaLiTaWO, BaLiTaWO, BaMgWO, BaLaTaO, BaLiTaWO, BaLaLiWO, BaTaWO, BaLaMgWO, BaLaLiWO, SrLaTaO, and SrLaTaOinto the barium magnesium tantalate to form a solid solution having a high Q value. 1. A method of making a high Q material comprising:providing barium magnesium tantalate; and{'sub': 2', '6', '8', '5', '24', '8', '5', '24', '2', '6', '3', '3', '12', '8', '5', '24', '6', '4', '2', '12', '2', '2', '2', '12', '6', '3', '3', '12', '12, 'incorporating one of BaMgWO, BaLiTaWO, BaLiTaWO, BaMgWO, BaLaTaO, BaLiTaWO, BaLaLiWO, BaTaWO, BaLaMgWO, BaLaLiWO, SrLaTaO, and SrLaTaOinto the barium magnesium tantalate to form a solid solution having a high Q value of greater than 12000 at about 10 GHz.'}2. The method of wherein the solid solution does not include tin.3. The method of wherein the solid solution contains at least 95% barium magnesium tantalate.4. The method of wherein the solid solution contains at least 97% barium magnesium tantalate.5. The method of wherein the solid solution has a dielectric constant of at least 25.6. The method of further comprising incorporating MgTaOinto the barium magnesium tantalate.7. The method of wherein the solid solution has a Q value of greater than 17000 at about 10 GHz.8. The method of further comprising incorporating the solid solution into a cellular base station.9. The method of further comprising incorporating the solid solution into a millimeter wave filter.10. The method of further comprising incorporating the solid solution into a collision avoidance system.11. The method of further comprising incorporating the solid solution into a resonator or isolator.12. A method of making a composite material claim 1 , the method comprising:providing barium magnesium tantalate; and{'sub': 2', '6', '8', '5', '24', '8', '5', '24', '2', '6', '3', '3', '12', '8', '5', '24', '6', '4', '2 ...

ELECTRO-CERAMIC MATERIAL COMPONENT, ITS MANUFACTURING METHOD AND METHOD OF CONVERTING ENERGY

The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy. 1. A method of manufacturing an electrical ceramic composite component , the method comprisingforming a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel; and{'sub': x', 'y', 'z', 'α', 'β', '3-δ', 'φ', 'ψ', 'ω, 'exposing said mixture to a heat treatment, which has a temperature within 700° C. to 850° C. for a first period, and thereafter a temperature within 1140° C. to 1170° C. for a second predefined period in order to form the ceramic material element of the component including a main phase of orthorhombic perovskite-structure (KNaBa)(NbNi)O and a secondary phase KNbO, which has the molar ratio R1 in a range about 0.29-0.32, the molar ratio R2 in a range ...

PREPARATION AND APPLICATION OF A LOW-B HIGH-RESISTANCE HIGH-TEMPERATURE THERMISTOR MATERIAL WITH WIDE TEMPERATURE RANGE

An object of the present disclosure is to provide the preparation and application of a low-B high-resistance high-temperature thermistor material with wide temperature range. The thermistor material uses CaCO, YO, NbO, CeOand MoOas raw materials. The CaYMoO-xCeNbO(1≤x≤3, 0.01≤y≤0.2) high-temperature thermistor material having low-B high-resistance and wide temperature region is obtained by mixing grinding, calcination, cold isostatic pressing, high-temperature sintering and coating electrode. The material constant Bis 1800 K-4000 K, and the resistivity at 25° C. is 8.0×10Ω·cm-6.0×10Ω·cm. The low-B high-resistance wide temperature range high-temperature thermistor material prepared by the disclosure has stable performance and good consistency. The thermistor material has obvious negative temperature coefficient characteristics in the range of 25° C.-1000° C. and is suitable for manufacturing wide temperature range high-temperature thermistor. 1. A low-B high-resistance wide temperature range high-temperature thermistor material , wherein the thermistor material is prepared by CaCO , NbO , CeO , MoOand YO , and the thermistor material is a composite oxide including Ca , Y , Mo , Ce and Nb.2. The low-B high-resistance wide temperature range high-temperature thermistor material according to claim 1 , wherein the chemical composition system is composed of CaYMoO-xCeNbO claim 1 , wherein 1≤x≤3 claim 1 , 0.01≤y≤0.2.3. The low-B high-resistance wide temperature range high-temperature thermistor material according to claim 1 , wherein the molar ratio of Ca claim 1 , Y claim 1 , Mo claim 1 , Ce and Nb is (0.8˜0.99):(0.01˜0.2): 1:(1˜3):(1˜3).4. The low-B high-resistance wide temperature range high-temperature thermistor material according to claim 1 , wherein the molar ratio of Ca claim 1 , Y claim 1 , Mo claim 1 , Ce and Nb is (0.85˜0.95):(0.05˜0.15):1:(1.5˜2.5):(1.5˜2.5).5. A preparation method of the low-B high-resistance wide temperature range high-temperature thermistor ...

DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT

A dielectric ceramic composition including a first component and a second component. The first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % an oxide of Sr of 0.00 mol % to 47.12 mol %, an oxide of Ba of 0.00 mol % to 51.22 mol %, an oxide of Ti of 0.00 mol % to 17.36 mol %, an oxide of Zr of 0.00 mol % to 17.36 mol %, an oxide of Sn of 0.00 mol % to 2.60 mol %, an oxide of Nb of 0.00 mol % to 35.32 mol %, an oxide of Ta of 0.00 mol % to 35.32 mol %, and an oxide of V of 0.00 mol % to 2.65 mol %. The second component includes (by mass) at least (a) an oxide of Mn of 0.005% to 3.500% by mass and (b) one or both of an oxide of Cu of 0.080% by mass to 20.000% and an oxide of Ru of 0.300% to 45.000%. 1. A dielectric ceramic composition comprising:a first component; anda second component, wherein{'sub': 2', '2', '2', '2', '5', '2', '5', '2', '5, 'as a content ratio relative to a total number of moles of the first component when converted into following oxides, the first component comprises an oxide of Ca of 0.00 mol % to 35.85 mol % in terms of CaO, an oxide of Sr of 0.00 mol % to 47.12 mol % in terms of SrO, an oxide of Ba of 0.00 mol % to 51.22 mol % in terms of BaO, an oxide of Ti of 0.00 mol % to 17.36 mol % in terms of TiO, an oxide of Zr of 0.00 mol % to 17.36 mol % in terms of ZrO, an oxide of Sn of 0.00 mol % to 2.60 mol % in terms of SnO, an oxide of Nb of 0.00 mol % to 35.32 mol % in terms of NbO, an oxide of Ta of 0.00 mol % to 35.32 mol % in terms of TaO, and an oxide of V of 0.00 mol % to 2.65 mol % in terms of VO;'}{'sub': 2', '2', '2', '2', '5', '2', '5', '2', '5, 'the first component comprises at least one oxide selected from the oxide of Ca, the oxide of Sr, and the oxide of Ba, at least one oxide selected from the oxide of Ti and the oxide of Zr, and at least one oxide selected from the oxide of Nb and the oxide of Ta as essential components, and a total content ratio of the oxide of Ca in terms of CaO, the oxide of Sr in terms of SrO, ...

Mechanically stable hollow cylindrical shaped catalyst bodies for gas phase oxidation of an alkene to an unsaturated aldehyde and/or an unsaturated carboxylic acid

A hollow cylindrical shaped catalyst body for gas phase oxidation of an alkene to an α,β-unsaturated aldehyde and/or an α,β-unsaturated carboxylic acid comprises a compacted multimetal oxide having an external diameter ED, an internal diameter ID and a height H, wherein ED is in the range from 3.5 to 4.5 mm; the ratio q=ID/ED is in the range from 0.4 to 0.55; and the ratio p=H/ED is in the range from 0.5 to 1. The shaped catalyst body is mechanically stable and catalyzes the partial oxidation of an alkene to the products of value with high selectivity. It provides a sufficiently high catalyst mass density of the catalyst bed and good long-term stability with acceptable pressure drop.

CERAMIC PRODUCT WITH ORIENTED PARTICLES AND METHOD FOR THE PRODUCTION THEREOF

A method includes the following steps: a) the production of a slip including more than 4% and less than 50% of ceramic particles and including: b) a first particulate fraction including of orientable particles having a median length L′50 and representing more than 1% of the ceramic particles, and c) a second particulate fraction having a median length D50 at least ten times shorter than L′50 and representing more than 1% of the ceramic particles, the first and second particulate fractions together representing more than 80% of all of the ceramic particles, in volume percentages based on the total quantity of ceramic particles; d) oriented freezing of the slip by moving a solidification front at a lower speed than the speed of encapsulation of the ceramic particles; e) elimination of the crystals of the solidified liquid phase of the block; and f) optionally sintering. 1. Process for manufacturing a product , optionally sintered , said process comprising the following steps:a) preparing a slip comprising an ensemble of ceramic particles in suspension in a liquid phase, the ensemble of ceramic particles representing more than 4% and less than 50% of the volume of the slip and comprising:{'sub': '50', 'a first particulate fraction consisting of orientable, particles having a median length L′and representing more than 1% of the ceramic particles, in percentage by volume based on the ensemble of ceramic particles; and'}{'sub': 50', '50, 'a second particulate fraction having a median length Dat least ten times less than L′and representing more than 1% the ceramic particles in percentage by volume based on the ensemble of ceramic particles;'}the first and second particulate fractions together representing more than 80% of the ensemble of ceramic particles, in percentage by volume,(b) optionally, pouring the slip into a mould and/or removing air bubbles contained in the slip,{'b': '1', 'sub': '50', '(c) oriented freezing of the slip by displacement of a solidification front ...

INFRARED SELECTIVE RADIATION COOLING NANO-FUNCTIONAL COMPOSITION AND PREPARATION METHOD THEREOF

An infrared selective radiation cooling nano-functional composition and a preparation method thereof, wherein the composition is prepared from silica, a rare earth silicate compound and a molybdate compound according to a mass ratio of 1:(0.5-2):(0.5-2) by ball milling and uniform mixing, and the silica, the rare earth silicate compound and the molybdate compound have high infrared selective radiation performance at 8-10 μm, 9-12 μm and 10-14 μm. The rare earth silicate and molybdate compound are prepared by a sol-gel and a high-temperature solid phase process according to stoichiometric ratios SiO-(0.5-2)ReO-(0.1-1.0)NaO (Re═La, Sm, Eu, Gd, Tb, Dy, Er, Tm, Yb, Y or Sc) and RMoO(R═Mg, Ca, Sr or Ba). The infrared selective radiation cooling nano-functional composition prepares functional devices such as day and night double-effect radiation coolers to provide zero-energy cooling, energy saving and efficiency improvement functions for buildings, grain and oil stores, solar battery back plates and the like. 1. An infrared selective radiation cooling nano-functional composition , prepared from nano-silica , a rare earth silicate compound and a molybdate compound according to a mass ratio of 1:(0.5-2):(0.5-2) by ball milling and uniform mixing , wherein the rare earth silicate compound meets a stoichiometric ratio SiO-(0.5-2)ReO-(0.1-1.0)NaO and has high infrared selective radiation performance at 9-12 μm , and Re is La , Sm , Eu , Gd , Tb , Dy , Er , Tm , Yb , Y or Sc; the molybdate compound meets a stoichiometric ratio RMoOand has high infrared selective radiation performance at 10-14 μm , and R is Mg , Ca , Sr or Ba.2. The infrared selective radiation cooling nano-functional composition according to claim 1 , wherein the nano-functional composition has high selective absorption-radiation performance in an atmospheric window of 8-14 μm and is transparent to ultraviolet-visible-near infrared sunlight.3. A preparation method of the infrared selective radiation cooling ...

CERAMIC THERMAL INSULATION

A heat resistant electronic component is disclosed, comprising an electronic component covered by a layer of ceramic thermal insulation material containing lithium molybdate LiMoO. A process for manufacturing the heat resistant electronic component comprises obtaining ceramic thermal insulation material containing lithium molybdate LiMoOin a mouldable form, optionally mixing the ceramic thermal insulation material with at least one additive, covering an electronic component with the material, shaping the material covering the electronic component into a desired form, and drying the desired form at a temperature of from 20° C. to 120° C. 1. A process for manufacturing a heat resistant electronic component , comprising:{'sub': 2', '4, 'obtaining ceramic thermal insulation material containing lithium molybdate LiMoO, in a mouldable form;'}optionally mixing the ceramic thermal insulation material with at least one additive;covering an electronic component with the material;shaping the material covering the electronic component into a desired form; anddrying the desired form at a temperature of from 20° C. to 120° C.2. A process according to claim 1 , wherein it is performed at a temperature of 150° C. or below claim 1 , preferably from 20° C. to 150° C.3. A process according to claim 1 , wherein it comprises at least one of3D printing of the material on top of the electronic component,molding of the material on top of the electronic component, andpressure molding of the material on top of the electronic component.4. A process according to claim 1 , wherein it is performed at an atmospheric pressure.5. A heat resistant electronic component comprising an electronic component covered by a layer of ceramic thermal insulation material containing lithium molybdate LiMoO.6. A heat resistant electronic component according to claim 5 , wherein the electronic component comprises at least one of a battery claim 5 , supercapacitor claim 5 , electrolytic capacitor claim 5 , light ...

OXIDE SINTERED MATERIAL AND METHOD OF MANUFACTURING THE SAME, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

There are provided an oxide sintered material and a method of manufacturing the same as well as an oxide semiconductor film. The oxide sintered material contains In, W and Zn, includes an InOcrystal phase and an In(ZnO)Ocrystal phase (m represents a natural number), and an average number of oxygen atoms coordinated to an indium atom is 3 or more and less than 5.5. The oxide semiconductor film contains In, W and Zn. The oxide semiconductor film is amorphous, and an average number of oxygen atoms coordinated to an indium atom is 2 or more and less than 4.5. 1. An oxide sintered material containing indium , tungsten and zinc ,{'sub': 2', '3', '2', 'm', '3, 'comprising an InOcrystal phase and an In(ZnO)Ocrystal phase (m represents a natural number), and'}an average number of oxygen atoms coordinated to an indium atom being 3 or more and less than 5.5.2. The oxide sintered material according to claim 1 , wherein{'sub': 2', '3, 'a content of the InOcrystal phase is 10 mass % or more and less than 98 mass %.'}3. The oxide sintered material according to claim 1 , wherein{'sub': 2', 'm', '3, 'a content of the In(ZnO)Ocrystal phase is 1 mass % or more and less than 90 mass %.'}4. The oxide sintered material according to claim 1 , wherein{'sub': '4', 'the oxide sintered material further comprises a ZnWOcrystal phase.'}5. The oxide sintered material according to claim 4 , wherein{'sub': '4', 'a content of the ZnWOcrystal phase is 0.1 mass % or more and less than 10 mass %.'}6. The oxide sintered material according to claim 1 , whereina content of tungsten relative to a total content of indium, tungsten and zinc in the oxide sintered material is greater than 0.01 atom % and smaller than 20 atom %.7. The oxide sintered material according to claim 1 , whereina content of zinc relative to a total content of indium, tungsten and zinc in the oxide sintered material is greater than 1.2 atom % and smaller than 60 atom %.8. The oxide sintered material according to claim 1 , whereina ...

LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING THE SAME, AND METHOD OF MANUFACTURING LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION

A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide subphase. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase assumes a value in a range represented by 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system. 1. A lead-free piezoelectric ceramic composition whose main phase is of an alkali niobate/tantalate perovskite oxide having piezoelectric properties and whose subphase is of a metal oxide different from the main phase , wherein:the mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase falls within a range represented by 0.40<(Na/K)<3.0;the main phase has a crystal structure in which(i) first spots corresponding to a primitive lattice period and(ii) second spots corresponding to a lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image obtained through a transmission electron microscope on the condition that an electron beam enters from the <100> direction with the main phase represented as a pseudo-cubic crystal system; andthe water absorption rate of the lead-free piezoelectric ceramic composition is 0.1% or less.2. A lead-free piezoelectric ceramic composition according to claim 1 , whereinthe subphase fills pores formed between the main phases.3. A lead-free piezoelectric ceramic composition according to claim 1 , whereinthe mole ratio (Na/K) assumes a value in a range represented by 1.0<(Na/K)<2.0.4. A lead-free piezoelectric ceramic composition according to claim 1 , ...

LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING THE SAME, AND METHOD OF MANUFACTURING LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION

A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase is 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system. Also, the area ratio of a crystal phase reflecting the second spots in the main phase is 33% or less, and the maximum grain size of crystals reflecting the second spots in the main phase is 25 nm or less. 1. A lead-free piezoelectric ceramic composition whose main phase is of an alkali niobate/tantalate perovskite oxide having piezoelectric properties and whose subphase is of a metal oxide different from the main phase , wherein:the mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase falls within a range represented by 0.40<(Na/K)<3.0;the main phase has a crystal structure in which(i) first spots corresponding to a primitive lattice period and(ii) second spots corresponding to a lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image obtained through a transmission electron microscope on the condition that an electron beam enters from the <100> direction with the main phase represented as a pseudo-cubic crystal system; andthe area ratio of a crystal phase reflecting the second spots in the main phase is 33% or less, and the maximum grain size of crystals reflecting the second spots in the main phase is 25 nm or less.2. A lead-free piezoelectric ceramic composition according to claim 1 , whereinthe subphase fills pores ...

PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT, AND METHOD FOR THE SAME

A piezoelectric ceramic composition comprises a basic composition of (1-x)Pb(MgW)(NiNb)(ZrTi)O+xBiFeO, wherein x=0 or 0.015 y=0.47-0.53, and at least one sintering aid of LiCO, CaCO, PbO, CuO and FeO, a piezoelectric element comprising the composition, and a method for preparing the same. The piezoelectric ceramic composition allows low temperature sintering and the piezoelectric ceramics prepared therefrom improves structural property, piezoelectric property and dielectric property. 1. A piezoelectric ceramic composition comprising a basic composition of (1-x)Pb(MgW)(NiNb)(ZrTi)O+xBiFeO , wherein x=0 or 0.015 and y=0.47-0.53 , and at least one sintering aid selected from the group consisting of LiCO , CaCO , PbO , CuO and FeO.2. The piezoelectric ceramic composition of claim 1 , wherein the sintering aid is 0.2 wt % LiCOand 0.25 wt % CaCObased on a total weight of the piezoelectric ceramic composition.3. The piezoelectric ceramic composition of claim 1 , wherein the sintering aid is 0.3 wt % PbO claim 1 , 0.3 wt % CuO claim 1 , and 0.1-0.4 wt % FeObased on a total weight of the piezoelectric ceramic composition.4. A piezoelectric element comprising the piezoelectric ceramic composition of .5. The piezoelectric element of claim 4 , further comprising an internal electrode layer formed on at least one of a top and a bottom of the piezoelectric layer.6. The piezoelectric element of claim 5 , wherein the internal electrode layer comprises an Ag—Pd alloy.7. The piezoelectric element of claim 6 , wherein the internal electrode layer comprises a palladium content of from more than 0 wt % to 10 wt % in the Ag—Pd alloy.8. The piezoelectric element of claim 4 , wherein the piezoelectric element is a piezoelectric actuator.9. A method for preparing a piezoelectric ceramic composition comprising:{'sub': 2', '5', '2', '2', '1/2', '1/2', '0.03', '1/3', '2/3', '0.09', 'y', '1-y', '0.88', '3', '3, 'mixing or combining PbO, MgO, WO, NiO, NbO, ZrO, and TiOto prepare a basic ...

DOPED TITANIUM NIOBATE AND BATTERY

Doped titanium niobate is provided, which has a chemical structure of TiM1NbM2OQor TiM1NbM2OQ, wherein M1 is Li, Mg, or a combination thereof; M2 is Fe, Mn, V, Ni, Cr, or a combination thereof; Q is F, Cl, Br, I, S, or a combination thereof; 0≤x≤0.15; 0≤y≤0.15; 0.01≤z≤2; 0≤x′≤0.3; 0≤y′≤0.9; and 0.01≤z′≤8. 1. Doped titanium niobate , having a chemical structure of:{'sub': (1-x)', 'x', '(2-y)', 'y', '(7-z)', 'z', '(2-x′)', 'x′', '(10-y′)', 'y′', '(29-z′)', 'z′, 'TiM1NbM2OQor TiM1NbM2OQ,'} M2 is Fe, Mn, V, Ni, Cr, or a combination thereof;', 'Q is F, Cl, Br, I, S, or a combination thereof;', '0≤x≤0.15;', '0≤y≤0.15;', '0.01≤z≤2;', '0≤x′≤0.3;', '0≤y′≤0.9; and', '0.01≤z′≤8., 'wherein M1 is Li, Mg, or a combination thereof;'}2. The doped titanium niobate as claimed in claim 1 , wherein TiM1NbM2OQhas a monoclinic lattice claim 1 , and TiM1NbM2OQhas a ReO type crystal structure.3. The doped titanium niobate as claimed in claim 1 , being a porous structure composed of a plurality of primary particles.4. The doped titanium niobate as claimed in claim 3 , wherein the porous structure has a median particle size of 0.3 micrometers to 60 micrometers claim 3 , the primary particles have a median particle size of 0.01 micrometers to 5 micrometers claim 3 , and the porous structure has a pore size of 50 nanometers to 1 micrometer.5. The doped titanium niobate as claimed in claim 1 , being a non-porous structure.6. The doped titanium niobate as claimed in claim 5 , wherein the non-porous structure has a median particle size of 0.01 micrometers to 10 micrometers.7. The doped titanium niobate as claimed in claim 1 , further mixing with lithium titanate to form a composite material claim 1 , wherein the doped titanium niobate and the lithium titanate have a weight ratio of 90:10 to 10:90.8. The doped titanium niobate as claimed in claim 7 , wherein surface of the lithium titanate is covered with carbon claim 7 , oxide claim 7 , or fluoride claim 7 , wherein the carbon claim 7 , oxide ...

Thermal spray powder and film that contain rare-earth element, and member provided with film

A thermal spray powder of the present invention contains a rare earth element and a group 2 element, which belongs to group 2 of the periodic table. The thermal spray powder, which contains a rare earth element and a group 2 element, is formed, for example, from a mixture of a rare earth element compound and a group 2 element compound or from a compound or solid solution containing a rare earth element and a group 2 element. The thermal spray powder may further contain a diluent element that is not a rare earth element or a group 2 element and is not oxygen, which is at least one element selected, for example, from titanium, zirconium, hafnium, vanadium, niobium, tantalum, zinc, boron, aluminum, gallium, silicon, molybdenum, tungsten, manganese, germanium, and phosphorus.

CRYSTAL-ORIENTED PIEZOELECTRIC CERAMIC, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING CRYSTAL-ORIENTED PIEZOELECTRIC CERAMIC

A crystal-oriented piezoelectric ceramic including a major constituent represented by general formula (1-s)A1B1O-sBaMO(where A1 is at least one element selected from alkali metals, B1 is at least one of transition metal elements and includes Nb, M is at least one of Group IVA elements and includes Zr, and 0.05 Подробнее

OXIDE DIELECTRIC AND METHOD FOR MANUFACTURING SAME, AND SOLID STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. 1. An oxide dielectric being an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) , niobium (Nb) , and oxygen , the oxide dielectric comprising:a first crystal phase of a pyrochlore-type crystal structure; and{'sub': '4', 'a second crystal phase of a β-BiNbO-type crystal structure, the oxide dielectric having a controlled content of the first crystal phase and a controlled content of the second crystal phase, wherein'}the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide in a temperature range of 25° C. or more and 120° C. or less, andthe second crystal phase has a dielectric constant that increases with increasing temperature of the oxide in the temperature range.2. An oxide dielectric being an oxide (possibly including inevitable impurities) consisting essentially of bismuth (Bi) , niobium (Nb) , and oxygen , the oxide dielectric comprising:a first crystal phase of a pyrochlore-type crystal structure; and{'sub': '4', 'a second crystal phase of a β-BiNbO-type crystal structure, wherein a content of the second crystal phase is 1.43 or more and 4.67 or less when a content of the first crystal phase is assumed to be 1.'}3. The oxide dielectric according to claim 1 , further comprising:{'sub': 3', '7, 'a third crystal phase of a BiNbO-type crystal structure and an amorphous phase, wherein'}a sum of the contents of the first and second crystal phases is more than 40% of a whole of the oxide.4. The oxide dielectric according to claim 1 , which has a dielectric constant of 54 or more and 140 or less.5. A solid state electronic device comprising the oxide dielectric according to .6. The solid state electronic device according to claim 5 , which is one selected from the ...

Abradable Compositions and Methods for CMC Shrouds

Coating systems on a surface of a CMC component, such as a CMC shroud, are provided. The coating system can include an environmental barrier coating on the surface of the CMC component and an abradable coating on the environmental barrier coating and defining an external surface opposite of the environmental barrier coating. The abradable coating includes a compound having the formula: Ln 2 ABO 8 , where Ln comprises scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, or mixtures thereof; A comprises Si, Ti, Ge, or a combination thereof; and B comprises Mo, W, or a combination thereof. In one embodiment, the abradable coating has a first coefficient of thermal expansion at an interface with the environmental barrier coating that changes to a second coefficient of thermal expansion at its external surface. Methods are also provided for applying an abradable coating onto a CMC component.

High-K LTCC Dielectric Compositions And Devices

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 1123-. (canceled)124. A composition comprising a lithium stuffed garnet and AlO , {'br': None, 'sub': A', 'B', 'C', 'D', 'E', 'F, 'LiLaM′M″ZrO,'}, 'wherein the lithium-stuffed garnet is characterized by the empirical formula'}wherein 5 Подробнее

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC EQUIPMENT

Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Na(BiBa)NbTiO(where 0.84≤x≤0.92, 0.84≤y≤0.92, 0.002≤(w+s)(1−y)≤0.035, and 0.9≤w/s≤1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide. 2. The piezoelectric material according to claim 1 , wherein a unit cell of the perovskite-type metal oxide has a structure containing at least two oxygen octahedra.3. The piezoelectric material according to claim 1 , wherein claim 1 , when a largest peak intensity in a 2θ range of from 44° to 48° in a case in which the piezoelectric material is powdered and subjected to X-ray diffraction measurement of 2θ-θ with Cu-Kα rays at room temperature is represented by I1 and a next largest peak intensity therein is represented by I2 claim 1 , a largest peak is located on a wide-angle side and a relationship of 1.1≤I1/I2≤1.3 is satisfied.4. The piezoelectric material according to claim 1 , wherein the piezoelectric material has a Curie temperature of 200° C. or more.5. The piezoelectric material according to claim 1 , wherein a content of each of Pb claim 1 , K claim 1 , Mg claim 1 , and Cu is 1 claim 1 ,000 ppm or less.6. A manufacturing method for a piezoelectric material comprising firing mixed raw material powder including sodium niobate claim 1 , barium titanate claim 1 , and sodium bismuth titanate each having a perovskite-type structure to obtain a sintered body claim 1 , {'br': None, 'sub': x+s(1−y)', 'w', '1−s−w', '1−y', 'y', '1−y', '3, 'Na(BiBa)NbTiO\u2003\u2003General Formula (1)'}, 'a perovskite-type metal oxide represented by the following ...

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC EQUIPMENT

A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05≤x≤0.12, a molar ratio y of Na to Nb is 0.93≤y≤0.98, a molar ratio z of Ba to Ti is 1.09≤z≤1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006≤m≤0.0030, and 1.07≤y×z≤1.50 is satisfied. 1. A piezoelectric material comprising:an oxide containing Na, Ba, Nb, Ti, and Mn,wherein the oxide has a perovskite-type structure,a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn,a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05≤x≤0.12, and a molar ratio y of Na to Nb is 0.93≤y≤0.98,a molar ratio z of Ba to Ti is 1.09≤z≤1.60,a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006≤m≤0.0030, and1.07≤y×z≤1.50 is satisfied.2. The piezoelectric material according to claim 1 ,wherein a molar ratio b of Ba to a total molar amount of Na and Ba contained in the piezoelectric material is 0.08≤b≤0.13.3. The piezoelectric material according to claim 1 ,wherein a Pb component and a K component contained in the piezoelectric material are less than 1000 ppm in total.4. The piezoelectric material according to claim 1 ,wherein the piezoelectric material has a Curie temperature of 235° C. or more.5. A piezoelectric element comprising:an electrode; anda piezoelectric material portion,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'wherein the piezoelectric material portion is formed of the piezoelectric material according to .'}6. The piezoelectric element according to claim 5 ,wherein the piezoelectric material portion has ...

PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC EQUIPMENT

A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430≤a≤0.460, 0.433≤b≤0.479, 0.040≤c≤0.070, 0.0125≤d≤0.0650, 0.0015≤e≤0.0092, 0.9×3e≤c−d≤1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively. 1. A piezoelectric material , comprising:perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg, wherein {'br': None, 'i': a≤', 'b≤', 'c≤', 'd≤', 'e≤', 'e≤c−d≤', 'e,a+b+c+d+e=, '0.430≤0.460,0.433≤0.479,0.040≤0.070,0.0125≤0.0650,0.0015≤0.0092,0.9×31.1×31\u2003\u2003(1),'}, 'relative numbers a, b, c, d, and e in a ratio of numbers of Na, Nb, Ba, Ti, and Mg atoms contained in the piezoelectric material satisfy a following relational expression (1),'}where a denotes the relative number of Na atoms, b denotes the relative number of Nb atoms, c denotes the relative number of Ba atoms, d denotes the relative number of Ti atoms, and e denotes the relative number of Mg atoms.2. The piezoelectric material according to claim 1 , whereinthe relative numbers a, b, and e have a relationship of 0.9×2e≤b−a≤1.1×2e.3. The piezoelectric material according to claim 1 , whereinthe relative numbers a, b, c, d, and e have a relationship of 0.97≤(a+c)/(b+d+e)≤1.03.4. The piezoelectric material according to claim 1 , whereina sum of contents of Pb and K in the piezoelectric material is less than 1000 atom ppm with respect to a sum of contents of Na, Nb, Ba, Ti, and Mg in the piezoelectric material.5. The piezoelectric material according to claim 1 , whereinan average grain diameter of crystal grains in the piezoelectric material is 1.0 μm or greater and 4.0 μm or smaller.6. The piezoelectric material according to claim 1 , whereinthe piezoelectric material contains Mn in an amount of 0.0050 or smaller in an atomic ratio where a sum of the numbers ...

CERAMIC-POLYMER COMPOSITES OBTAINED BY A COLD SINTERING PROCESS

Described herein are cold-sintered ceramic polymer composites and processes for making them from inorganic compound starting materials and polymers. The cold sintering process and wide variety of polymers permit the incorporation of diverse polymeric materials into the ceramic. 1. A cold-sintered ceramic polymer composite that is made by a process comprising:{'sub': '1', 'a. combining at least one inorganic compound in the form of particles having a number average particle size of less than about 30 μm with at least one polymer (P) and a solvent in which the inorganic compound is at least partially soluble to obtain a mixture; and'}{'sub': '1', 'b. subjecting the mixture to a pressure of no more than about 5000 MPa and a temperature (T) that is no greater than 200° C. above the boiling point of the solvent (as determined at 1 bar) to obtain the cold-sintered ceramic polymer composite,'}{'sub': 'm', 'claim-text': {'sub': g', '1, 'or a glass transition temperature (T), if the polymer is amorphous, that is less than T.'}, 'wherein the polymer has a melting point (T), if the polymer is crystalline or semi-crystalline,'}2. (canceled)3. (canceled)4. The cold-sintered ceramic polymer composite according to claim 1 , wherein Tis no greater than 100° C. above the boiling point of the solvent.5. The cold-sintered ceramic polymer composite according to claim 1 , wherein the mixture further comprises at least one polymer (P) that has a T claim 1 , if the polymer is crystalline or semi-crystalline claim 1 , or a T claim 1 , if the polymer is amorphous claim 1 , that is greater than T.6. The cold-sintered ceramic polymer composite according to claim 1 , wherein the process further comprises:{'sub': 2', 'm', 'g, 'c. subjecting the cold-sintered ceramic polymer composite to a temperature Tthat is greater than Tor T.'}7. The cold-sintered ceramic polymer composite according to claim 1 , wherein the at least one polymer (P) is selected from the group consisting of polyacetylenes ...

Patterning electronic devices using reactive-ion etching of tin oxides

Patterning electronic devices using reactive-ion etching of tin oxides is provided. Reactive-ion etching facilitates patterning of tin oxides, such as barium stannate (BaSnO3), at a consistent and controllable etch rate. The reactive-ion etching approach described herein facilitates photolithographic patterning of tin oxide-based semiconductors to produce electronic devices, such as thin-film transistors (TFTs). This approach further patterns a tin oxide-based semiconductor without adversely affecting its electrical properties (e.g., resistivity, electron or hole mobility), as well as maintaining surface roughness. This approach can be used to produce optically transparent devices with high drain current (ID, drain-to-source current per channel width) and high on-off ratio.

CERAMIC MATERIAL AND METHOD FOR PREPARING THE SAME

A ceramic material including CoTiTaO. The ceramic material is prepared as follows: 1) weighting and mixing raw powders of CoO, TiOand TaOproportioned according to the chemical formula of CoTiTaO, to yield a mixture; 2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120° C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100° C. for 3-5 h, to yield powders comprising a main crystalline phase of CoTiTaO; and 3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100° C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100° C. in air atmosphere for 4-6 h. 1. A ceramic material , comprising CoTiTaO.2. A method , comprising:{'sub': 2', '3', '2', '2', '5', '0.5', '0.5', '4, '1) weighting and mixing raw powders of CoO, TiOand TaOproportioned according to the chemical formula of CoTiTaO, to yield a mixture;'}{'sub': 0.5', '0.5', '4, '2) mixing the mixture obtained in 1), zirconia balls, and deionized water according to a mass ratio of 1:4-6:3-6, ball-milling for 6-8 h, drying at 80-120° C., sieving with a 60-200 mesh sieve, calcining in air atmosphere at 800-1100° C. for 3-5 h, to yield powders comprising a main crystalline phase of CoTiTaO; and'}{'sub': 0.5', '0.5', '4, '3) mixing the powders obtained in 2), zirconia balls, and deionized water according to a mass ratio of 1:3-5:2-4, ball-milling for 4-6 h, and drying at 80-100° C.; adding a 2-5 wt. % of polyvinyl alcohol solution to a resulting product, granulating, sintering resulting granules at 1000-1100° C. in air atmosphere for 4-6 h, to yield a ceramic material comprising CoTiTaO.'} Pursuant to 35 U.S.C. § 119 and the Paris Convention Treaty, this application claims foreign priority to Chinese Patent Application No. ...

COLD SINTERING CERAMICS AND COMPOSITES

Cold sintering of materials includes using a process of combining at least one inorganic compound, e.g., ceramic, in particle form with a solvent that can partially solubilize the inorganic compound to form a mixture; and applying pressure and a low temperature to the mixture to evaporate the solvent and densify the at least one inorganic compound to form sintered materials. 120-. (canceled)21. A material , comprising:at least one inorganic compound; combining the at least one inorganic compound with a solvent to form a mixture; and', 'applying pressure and heat to the mixture to evaporate the solvent and densify the at least one inorganic compound to form the material, wherein the applied heat is at a temperature of no more than 200° C. above the boiling point of the solvent, and wherein the material is densified to a relative density of greater than 80%., 'the material being a sintered material formed via a sintering process comprising22. The material of claim 21 , wherein the at least one inorganic compound has a particle size of less than 50 μm or less than 30 μm when combined with the solvent to form the mixture.231. The material of claim claim 21 , wherein the combining of the at least one inorganic compound with the solvent to form the mixture includes combining the at least one inorganic compound with at least one other substance with the solvent to form the mixture.24. The material of claim 23 , wherein the other substance is a polymer.25. The material of claim 21 , wherein the solvent at least partially solubilizes the at least one inorganic compound.26. The material of any of claim 21 , wherein the material is a composite material.27. The material of claim 21 , wherein a time period of less than 180 minutes claim 21 , a time period of no more than 60 minutes or a time period of no more than 30 minutes is utilized to obtain the relative density of greater than 80%.28. The material of claim 21 , wherein the solvent includes one or more of a Calcohol claim ...

Ceramic-polymer composite capacitors and manufacturing method

Capacitors including ceramic composite materials, and associated methods are shown. In selected examples, ceramic materials for capacitor dielectrics are processed at low temperatures that permit incorporation of low temperature components, such as polymer components.

HIGH PERFORMANCE MICROWAVE DIELECTRIC SYSTEMS AND METHODS

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude. 1. A method for modifying the loss tangent in an electrical device , the method comprising:operating the electrical device having a dielectric component containing a paramagnetic additive, wherein the operating subjects the dielectric component to microwave radiation; andapplying a static magnetic field to the dielectric component to modify the loss tangent in the dielectric component.2. The method of claim 1 , wherein the static magnetic field has a strength exceeding 50 gauss.3. The method of claim 1 , wherein the paramagnetic additive comprises at least one of a transition metal or a rare earth element.4. The method of claim 1 , wherein the dielectric component comprises at least one of:{'sub': 1/3', '2/3', '3, 'Ni- and Zr-alloyed Ba(ZnTa)O,'}{'sub': 1/3', '2/3', '3, 'Co-alloyed Ba(ZnNb)O,'}{'sub': 4', '2', '6, 'ZrTiO—ZnNbO, or'}{'sub': 4', '9', '2', '4', '11, 'BaTiO—BaZnTiO.'}5. The method of claim 1 , wherein applying the static magnetic field results in modification of the spin loss properties in the dielectric component.6. The method of claim 1 , wherein during the operating claim 1 , the dielectric component is configured with a temperature lower than 300 Kelvin.7. The method of claim 6 , wherein the loss tangent of the dielectric component is reduced by more than a factor of 2 responsive to application of the static magnetic field.8. The method of claim 6 , wherein the loss tangent of the dielectric component is reduced by at least two orders of magnitude responsive to application of the static ...

DIELECTRIC CERAMIC COMPOSITION, DIELECTRIC CERAMIC, ELECTRONIC DEVICE, AND COMMUNICATION DEVICE

A dielectric ceramic composition is represented by a general formula “xBiO-yZnO-(z-a)NbO5-aVO”. In the general formula, values “x”, “y”, “z” and “a” respectively satisfy the following conditions: 2.90≦x≦3.10, 1.90≦y≦2.10, 1.90≦z≦2.10, and 0.0005≦a≦0.020. 1. A dielectric ceramic composition represented by a general formula “xBiO-yZnO-(z-a)NbO5-aVO” , wherein“x”, “y”, “z” and “a” in the general formula respectively satisfies the following conditions;2.90≦x≦3.101.90≦y≦2.101.90≦z≦2.10, and0.0005≦a≦0.020.2. The dielectric ceramic composition as set forth in claim 1 , wherein a median particle size (D50) is 0.4 to 0.8 μm.3. A dielectric ceramic claim 1 , comprising the dielectric ceramic composition as set forth in .4. The dielectric ceramic as set for the in claim 3 , whereinan average grain size “d” after firing is 0.5 to 1.0 μm.5. An electronic device claim 3 , including the dielectric ceramic as set forth in .6. A communication device claim 5 , including the electronic device as set forth in .7. A dielectric ceramic claim 2 , comprising the dielectric ceramic composition as set forth in .8. The dielectric ceramic as set for the in claim 7 , whereinan average grain size “d” after firing is 0.5 to 1.0 μm.9. An electronic device claim 7 , including the dielectric ceramic as set forth in .10. An electronic device claim 4 , including the dielectric ceramic as set forth in .11. An electronic device claim 8 , including the dielectric ceramic as set forth in .12. A communication device claim 9 , including the electronic device as set forth in .13. A communication device claim 10 , including the electronic device as set forth in .14. A communication device claim 11 , including the electronic device as set forth in . 1. Field of the InventionThe present invention relates to a dielectric ceramic composition capable of low-temperature firing, a dielectric ceramic comprised of the composition, an electronic device and a communication device including the ceramic.2. Description of ...

Method for producing dense lithium lanthanum tantalate lithium-ion conducting ceramics

A method to produce high density, uniform lithium lanthanum tantalate lithium-ion conducting ceramics uses small particles that are sintered in a pressureless crucible that limits loss of LiO. 1. A method for producing a lithium lanthanum tantalate ceramic , comprising:dissolving lithium nitrate in an alcohol solvent;dissolving lanthanum acetate in an acid solvent;suspending tantalum oxide in an alcohol;blending the lithium nitrate solution, the lanthanum acetate solution, and the tantalum oxide suspension and evaporating the solvents to provide a stoichiometric mixture;combusting the stoichiometric mixture at a sufficiently high temperature to remove organics, thereby providing an inorganic mixture;calcining the inorganic mixture at a sufficiently high temperature to remove carbonates, thereby providing a mixed oxide powder; andsintering the mixed oxide powder in a closed and non-reactive crucible at a sufficiently high temperature and pressure to provide a dense lithium lanthanum tantalate ceramic.2. The method of claim 1 , wherein the alcohol solvent for dissolving lithium nitrate comprises ethanol.3. The method of claim 1 , wherein the acid solvent for dissolving lanthanum acetate comprises propionic acid.4. The method of claim 1 , wherein the alcohol for suspending tantalum oxide comprises ethanol.5. The method of claim 1 , wherein the sufficiently high temperature for combusting is greater than 500° C.6. The method of claim 1 , wherein the sufficiently high temperature for calcining is greater than 800° C.7. The method of claim 1 , wherein the sufficiently high temperature for sintering is greater than 1000° C.8. The method of claim 1 , wherein the sufficiently high pressure for sintering is ambient pressure.9. The method of claim 1 , wherein the closed and non-reactive crucible comprises a platinum crucible.10. The method of claim 1 , wherein the closed and non-reactive crucible comprises a transition metal crucible.11. The method of claim 10 , wherein the ...

GARNET MATERIALS FOR LI SECONDARY BATTERIES AND METHODS OF MAKING AND USING GARNET MATERIALS

Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof. 1. A composition comprising a lithium stuffed garnet and AlO , wherein the lithium-stuffed garnet is characterized by the empirical formula{'br': None, 'sub': A', 'B', 'D', 'E', 'F, 'i': 'c', 'LiLaM′M″ZrO,'}wherein 4 Подробнее

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of the particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. One of specifically disclosed is a method of producing a substantially rectangular cuboid particulate alkali metal niobate represented by MNbO 3 (1), wherein M represents one element selected from alkaline metals, including specific four steps. Another one of specifically disclosed is particulate alkali metal niobate represented by the formula (1) having a substantially rectangular cuboid shape, wherein the substantially rectangular cuboid shape has a longest side and a shortest side, the length of the longest side represented by an index L max is 0.10 to 25 μm, and the length of the shortest side represented by an index L min is 0.050 to 15 μm.

Piezoelectric material, piezoelectric element, and electronic equipment

There is provided a lead- and potassium-free piezoelectric material having a high piezoelectric constant and a satisfactory insulation property and a piezoelectric element that includes the piezoelectric material. The piezoelectric material contains a perovskite-type metal oxide having the general formula (1): (NaxBa1-y)(NbyTi1-y)O3 (wherein x satisfies 0.80≤x≤0.95, and y satisfies 0.85≤y≤0.95); and at least one rare-earth element selected from La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, wherein the rare-earth element content is more than 0 mol % and 5 mol % or less of the amount of perovskite-type metal oxide. The piezoelectric element includes the piezoelectric material.

SEMICONDUCTOR CERAMIC COMPOSITION AND PTC THERMISTOR

A semiconductor ceramic composition represented by formula (1), 2. The semiconductor ceramic composition of claim 1 , wherein claim 1 , Si is further contained in the semiconductor ceramic composition in a ratio of 0.035 mol or less relative to 1 mol of Ti site in terms of element claim 1 , wherein claim 1 , the Ti site is the total molar number of Ti and TM.3. The semiconductor ceramic composition of claim 1 , wherein claim 1 ,Mn is further contained in the semiconductor ceramic composition in a ratio of 0.0015 mol or less relative to 1 mol of Ti site in terms of element, wherein, the Ti site is the total molar number of Ti and TM.4. A PTC thermistor comprising a ceramic body and electrodes formed on two main faces of the ceramic body claim 1 , wherein claim 1 ,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the ceramic body is formed by using the semiconductor ceramic composition of .'}5. The semiconductor ceramic composition of claim 2 , wherein claim 2 ,Mn is further contained in the semiconductor ceramic composition in a ratio of 0.0015 mol or less relative to 1 mol of Ti site in terms of element, wherein, the Ti site is the total molar number of Ti and TM.6. A PTC thermistor comprising a ceramic body and electrodes formed on two main faces of the ceramic body claim 2 , wherein claim 2 ,{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'the ceramic body is formed by using the semiconductor ceramic composition of .'}7. A PTC thermistor comprising a ceramic body and electrodes formed on two main faces of the ceramic body claim 2 , wherein claim 2 ,{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'the ceramic body is formed by using the semiconductor ceramic composition of .'}8. A PTC thermistor comprising a ceramic body and electrodes formed on two main faces of the ceramic body claim 2 , wherein claim 2 ,{'claim-ref': {'@idref': 'CLM-00005', 'claim 5'}, 'the ceramic body is formed by using the semiconductor ceramic composition of .'} The present invention ...

DIELECTRIC CERAMIC COMPOSITION AND CERAMIC CAPACITOR

A dielectric ceramic composition represented by a general formula {(NaKLiM2)(NbTaM4)O+αMnO+βLaO+γLiO}, wherein 0≤v≤0.01, 0≤w≤0.01, 0.05≤x, z≤0.15, 0≤y≤0.1, 0.003≤α≤0.05, 0.001≤β≤0.05, and 0.005≤γ≤0.05. M2 is Ba, Ca, and/or Sr, and M4 is Zr, Hf, and/or Sn. A ceramic layer is formed of the dielectric ceramic composition, and an internal electrode is formed of a base metal material such as Ni. 1. A dielectric ceramic composition comprising:{'sub': '3', 'claim-text': the A site contains at least an alkali metal element containing Na and an M2 element, where M2 is at least one kind of element selected from Ba, Ca, and Sr, and', 'the B site contains at least Nb and an M4 element, where M4 is at least one kind of element selected from Zr, Hf, and Sn,', 'a molar ratio content of the M2 element is 0.05 to 0.15 relative to a total of constituent elements of the A site, and a molar ratio content of the M4 element is 0.05 to 0.15 relative to a total of constituent elements of the B site;, 'a main ingredient formed of a perovskite compound represented by a general formula ABO, wherein'}Mn at 0.003 to 0.05 parts by mol relative to 1 part by mol of the total of the constituent elements of the B site in terms of MnO;{'sub': 2', '3, 'La at 0.001 to 0.05 parts by mol relative to 1 part by mol of the total of the constituent elements of the B site in terms of LaO; and'}{'sub': '2', 'Li at 0.005 to 0.05 parts by mol relative to 1 part by mol to the total of the constituent elements of the B site in terms of LiO;'}at least one of K and Li added to the A site in a molar ratio range of 0 to 0.01 relative to the total of the constituent elements of the A site; andTa added to the B site in a molar ratio range of 0 to 0.1 relative to the total of the constituent elements of the B site.2. The dielectric ceramic composition according to claim 1 , further comprising at least one of K and Li added to the A site in a molar ratio range of up to 0.01 relative to the total of the constituent ...

Ceramic-polymer composites obtained by cold sintering process using a reactive monomer approach

Described herein are cold-sintered ceramic polymer composites and processes for making them from ceramic precursor materials and monomers and/or oligomers. The cold sintering process and wide variety of monomers permit the incorporation of diverse polymeric materials into the ceramic.

Method for Making Ferroelectric Material Thin Films

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells. 1. A method of making a ferroelectric thin film for a photoelectric device comprising:vaporizing a target, and{'sub': 3', '0.5', '0.5', '3, 'growing a thin film from the vaporized target on the surface of a substrate, wherein the grown thin film comprises a (l-x)KNbO-xBaNbNiO(KBNNO) material.'}2. The method of claim 1 , wherein the thin film is between 15 nm and 1 micron thick.3. The method of claim 1 , wherein the substrate has a temperature between possible between 400 to 800° C.4. The method of wherein the substrate is lattice mismatched with respect to the grown thin film.5. The method of claim 1 , wherein vaporization is performed using a laser.6. The method of claim 1 , wherein vaporization is performed using RF sputtering.7. The method of claim 1 , further comprising forming the target prior to vaporizing the target claim 1 , wherein forming the target comprises:{'sub': 3', '2', '5, 'mixing KNO, NBO, NiO and BaO into a powder.'}8. The method of claim 7 , wherein forming the target further comprises;grinding the powder;pressing the ground powder; andannealing the pressed, ground powder.9. The method of claim 7 , wherein forming the target further comprises;ball-milling the powder;annealing the ball-milled powder;{'sub': '3', 'mixing the annealed powder with KNOand pressing into pellets; and'}heating the pellets.10. The method of claim 1 , further comprising forming the target prior to vaporizing the target claim 1 , wherein forming the target comprises:{'sub': 2', '3', '3', '2', '5, 'mixing KCO, BaCO, NiO and NBOinto a powder;'}ball milling the powder;calcining the powder;pressing the powder into pellets; andsintering the pellets.11. The ...

DIELECTRIC COMPOSITION, DIELECTRIC ELEMENT, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE

A dielectric composition comprising a main component expressed by a chemical formula of (ABCDO, 0≤x≤5), wherein said “A” component is at least one element selected form the group consisting of Ba, Ca, and Sr, said “B” component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said “C” component is at least one element selected from the group consisting of Ti, and Zr, said “D” component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component. 1. A dielectric composition comprising a main component expressed by a chemical formula of (ABCDO , 0≤x≤5) , whereinsaid “A” component is at least one element selected form the group consisting of Ba, Ca, and Sr,said “B” component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu,said “C” component is at least one element selected from the group consisting of Ti, and Zr,said “D” component is at least one element selected from the group consisting of Nb, and Ta, andsaid dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.2. The dielectric composition as set forth in comprising 0.10 mol or more and 20.00 mol or less of oxides of at least one element selected from the group consisting of Mn claim 1 , Mg claim 1 , V claim 1 , W claim 1 , Mo claim 1 , Si claim 1 , Li claim 1 , B claim 1 , and Al as a second sub component with respect to 100 mol of said main component.3. A dielectric composition comprising crystal grains and a grain boundary occupying between said crystal grains claim 1 , wherein{'sub': 6-x', 'x', 'x+2', '8-x', '30, 'said crystal grain comprises a compound expressed by ABCDO(0≤x≤5) as ...

Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device including an oxide semiconductor film formed using the oxide sintered material. 1. An oxide sintered material containing indium , tungsten , and zinc , the oxide sintered material comprising:a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; anda second crystal phase having a first diffraction peak at a location of more than 34.74 deg and less than 34.97 deg of 2θ in X-ray diffraction, wherein{'sup': 3', '3, 'the oxide sintered material has an apparent density of more than 6.4 g/cmand less than or equal to 7.5 g/cm,'}a content of the tungsten relative to a total of the indium, the tungsten, and the zinc in the oxide sintered material is more than 0.01 atom % and less than or equal to 5.0 atom %,a content of the zinc relative to the total of the indium, the tungsten, and the zinc in the oxide sintered material is more than or equal to 1.2 atom % and less than 50 atom %, andan atomic ratio of the zinc to the tungsten in the oxide sintered material is more than 1.0 and less than 20000.2. The oxide sintered material according to claim 1 , further comprising a third crystal phase claim 1 , which is a crystal phase different from the first crystal phase and contains the zinc claim 1 , whereinthe third crystal phase includes particles having an average major axis size of more than or equal to 3 μm and less than or equal to 50 μm and having an average aspect ratio of more than or equal to 1.5 and less than or equal to 50.3. The oxide sintered material according to claim 2 , wherein the third crystal phase is dispersed in the first crystal phase.4. The oxide sintered material ...

NbO2 Sintered Compact, Sputtering Target Comprising the Sintered Compact, and Method of Producing NbO2 Sintered Compact

The present invention relates to a NbOsintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of NbOrelative to the X-ray diffraction peak intensity of a (400) plane of NbOis 1% or less. The present invention provides, without using an expensive NbOmaterial, a NbOsintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbOsintered compact having a high density suitable for stabilizing sputtering. 1. A NbOsintered compact sputtering target , wherein an intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of Nb2Orelative to the X-ray diffraction peak intensity of a (400) plane of NbOis 1% or less , and a relative density is 95% or more.2. The NbOsintered compact sputtering target according to claim 1 , wherein the intensity proportion of the X-ray diffraction peak intensity of a (110) plane of Nb relative to the X-ray diffraction peak intensity of a (400) plane of NbOis 1% or less.3. The NbOsintered compact sputtering target according to or claim 1 , wherein the intensity proportion of the X-ray diffraction peak intensity of a (400) plane of NbOrelative to the X-ray diffraction peak intensity of a (400) plane of NbOis 5% or less.4. (canceled)5. The NbOsintered compact sputtering target according claim 3 , wherein the density variation between arbitrary two points in a plane of the sintered compact sputtering target is 1.0% or less.6. The NbOsintered compact sputtering target according to claim 5 , having a diameter of 110 mm or more.7. (canceled)8. The sputtering target according to claim 6 , having resistivity on a surface of 100 mΩ·cm or less.9. The sputtering target according to claim 8 , wherein the sputtering target is bonded to a backing plate made of oxygen-free copper claim 8 , chromated copper ...

DIELECTRIC CERAMIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT

According to the present invention, a dielectric ceramic composition, which can be fired in a reducing atmosphere, has a high dielectric constant, has an electrostatic capacity exhibiting little change, when used as a dielectric layer of a ceramic electronic component such as a laminated ceramic capacitor even under a condition of 150 to 200° C., and has small dielectric losses at 25° C. and 200° C., can be provided. 1. A dielectric ceramic composition comprising a first component and a second component , wherein:{'sub': 2', '2', '2', '2', '5', '2', '5', '2', '5, 'the first component comprises: an oxide of Ca in a content of 0 to 35.85 mol % in terms of CaO; an oxide of Sr in a content of 0 to 47.12 mol % in terms of SrO; an oxide of Ba in a content of 0 to 51.22 mol % in terms of BaO; an oxide of Ti in a content of 0 to 17.36 mol % in terms of TiO; an oxide of Zr in a content of 0 to 17.36 mol % in terms of ZrO; an oxide of Sn in a content of 0 to 2.60 mol % in terms of SnO; an oxide of Nb in a content of 0 to 35.32 mol % in terms of NbO; an oxide of Ta in a content of 0 to 35.32 mol % in terms of TaO; and an oxide of V in a content of 0 to 2.65 mol % in terms of VO, at the specified content based on the total number of moles of the first component in terms of the above oxides;'}{'sub': 2', '2', '2', '2', '5', '2', '5', '2', '5, 'the first component comprises at least one selected from the oxide of Ca, the oxide of Sr, and the oxide of Ba, at least one selected from the oxide of Ti and the oxide of Zr, and at least one selected from the oxide of Nb and the oxide of Ta; and wherein, based on a total number of moles of the first component in terms of the above oxides, a total content of the oxide of Ca in terms of CaO, the oxide of Sr in terms of SrO, and the oxide of Ba in terms of BaO is 48.72 to 51.22 mol %; a total content of the oxide of Ti in terms of TiO, the oxide of Zr in terms of ZrO, and the oxide of Sn in terms of SnOis 15.97 to 17.36 mol %; and a total ...

DIELECTRIC CERAMIC COMPOSITION

A dielectric ceramic composition includes a first inorganic component having a trigonal ditrigonal pyramidal crystal structure, a second inorganic component having a hexoctahedral crystal structure, and a solid solution portion of the trigonal ditrigonal pyramidal crystal structure and the hexoctahedral crystal structure is formed between the first inorganic component and the second inorganic component. 1. A dielectric ceramic composition , comprising:a first inorganic component having a trigonal ditrigonal pyramidal crystal structure;a second inorganic component having a hexoctahedral crystal structure; anda solid solution portion of the trigonal ditrigonal pyramidal crystal structure and the hexoctahedral crystal structure is formed between the first inorganic component and the second inorganic component.2. The dielectric ceramic composition according to claim 1 , wherein the first inorganic component comprises MgNbO.3. The dielectric ceramic composition according to claim 1 , wherein the second inorganic component comprises MgAlO claim 1 , MgSiO claim 1 , MgTiO claim 1 , ZnTiO claim 1 , β-SiO claim 1 , or ZnVO.4. The dielectric ceramic composition according to claim 1 , wherein the content of the first inorganic component in the dielectric ceramic composition is 25 to 50 atomic percent.5. The dielectric ceramic composition according to claim 1 , wherein the content of the second inorganic component in the dielectric ceramic composition is 25 to 50 atomic percent.6. The dielectric ceramic composition according to claim 1 , further comprising a glass component.7. The dielectric ceramic composition according to claim 6 , wherein the content of the glass component in the dielectric ceramic composition is 30 weight percent or less.8. A dielectric ceramic composition claim 6 , comprising:{'sub': 4', '2', '9, 'a first inorganic component, comprising MgNbO;'}{'sub': 2', '4', '2', '4', '2', '4', '2', '4', '2', '2', '4, 'a second inorganic component, comprising MgAlO, ...

BISMUTH AND MAGNESIUM CO-DOPED LITHIUM NIOBATE CRYSTAL, PREPARATION METHOD THEREOF AND APPLICATION THEREOF

A bismuth and magnesium co-doped lithium niobate crystal includes LiCO, NbO, BiOand MgO, wherein the molar ratio of [Li] and [Nb] is 0.90-1.00, the molar percentage of BiOin the mixture is 0.25-0.80%, and the molar percentage of MgO in the mixture is 3.0-7.0%. The bismuth and magnesium co-doped lithium niobate crystal has enhanced photorefraction, improved photorefractive sensitivity, shortened holographic grating saturation writing time, and the photorefractive diffraction efficiency can reach up to 17%. The response time is only 170 ms, when the holographic storage experiment is carried out using 488 nm continuous laser. Therefore, this crystal can be used in the field of holographic imaging. 1. A bismuth and magnesium co-doped lithium niobate crystal , comprising:{'sub': 2', '3', '2', '5', '2', '3', '2', '3, 'a mixture of LiCO, NbO, BiOand MgO, wherein molar ratio of [Li] and [Nb] is 0.90-1.00, wherein molar percentage of BiOin the mixture is 0.25-0.80%, and wherein the molar percentage of MgO in the mixture is 3.0-7.0%.'}2. The bismuth and magnesium co-doped lithium niobate crystal claim 1 , according to claim 1 , wherein purity of LiCO claim 1 , NbO claim 1 , BiO and MgO is 99.99%.3. A method for preparing bismuth and magnesium co-doped lithium niobate crystal claim 1 , the method comprising the following steps:{'sub': 2', '3', '2', '5', '2', '3', '2', '3, 'mixing the powders of LiCO, NbO, BiOand MgO by grinding with a planetary ball mill, wherein molar ratio of [Li] and [Nb] is 0.90-1.00, wherein molar percentage of BiOin the mixture is 0.25-0.80%, and wherein molar percentage of MgO in the mixture is 3.0-7.0%,'}{'sub': 2', '3, 'keeping the mixture at a constant temperature of 850° C. to decompose LiCO;'}calcining at 1150° C. to make the mixed materials take place full solid phase reaction so as to form a powder of bismuth and magnesium co-doped lithium niobate;compacting the powder of bismuth and magnesium co-doped lithium niobate;placing into a platinum ...