WAERMESTABILISIERTES HALOGENHALTIGES POLYMER.

PROCEDURE FOR THE STABILIZATION OF HALOGENHALTIGEN POLYMERS WITH SCHWEFELHALTIGEN TIN CONNECTIONS.

LIQUID ORGANOZINN THIOALKANOL STABILIZATION COMPOSITIONS, PROCEDURES FOR THEIR PRODUCTION AND VINYLHALOGENIDHARZE IT CONTAINING

SULFUR-CONTAINING ORGANOTIN COMPOUNDS AND STABILIZED HALOGEN-CONTAINING RESINS

ORGANOTIN SULFIDES AND PROCESS FOR PRODUCTION THEREOF

MIXTURE FROM A HALOGEN ABSTENTION POLYMERS, AT LEAST A STABILIZER AND IF NECESSARY AUXILIARY MATERIALS

MIXTURE FROM A HALOGEN ABSTENTION POLYMERS, AT LEAST A STABILIZER AND IF NECESSARY AUXILIARY MATERIALS

STORAGE STABLE LIQUID ORGANOTINTHIOALKANOL PVC STABILIZER

The invention comprises a method for preparing a stabilizer comprising organotinthioalkanol comprising reacting the ingredients in a mixture comprising both alkyltin and dialkyltin containing compounds, a thioalkanol, an additional sulfur containing compound and optionally an oxygen containing compound. The amount of thioalkanol in the composition is limited to no more than about 0.5000 equivalent per equivalent of the alkyltin and dialkyltin containing compounds. There is also present from about 1 percent by weight to about 50 percent by weight, based on the weight of the organotinthioalkanol stabilizer of a low volatility, low water solubility, aliphatic hydroxyl-containing, liquid organic compound that is introduced into the reaction mixture following completion of the reaction. The invention includes the organotinthioalkanol stabilizer made by the above method.

Способ получения оловоорганических меркаптосоединений

ORGANO-TIN COMPOUNDS

ORGANOTIN COMPOUNDS AND PESTICIDES CONTAINING THEM

The invention provides a compound of the formula: (I) in which R1 represents alkyl, cycloalkyl or aralkyl, R* represents fluorophenyl or trifluoromethylphenyl when R1 is alkyl; R* represents dichlorophenyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: wherein R2 represents halogen, trifluoromethyl, or lower alkoxy when R1 is cycloalkyl; or R* represents 2-thienyl, 3-thienyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: wherein R3, R4 and R5 independently represent hydrogen, halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is aralkyl, m represents 1 or 2, and X represents halogen, imidazolyl, triazolyl, phenylthio or a radical selected from the group consisting of: -OCOR6, -SSCNR7R8, -NCO, -NCS, , -SCH2COOR6, -SR7, and wherein R6 represents alkyl, R7 and R8 independently represent lower alkyl and R9 and R10 independently represent hydrogen or lower alkyl when ...

Organotin compounds and pesticides containing them

PREPARATION OF ORGANOTIN COMPOUNDS

ORGANOTIN MERCAPTOALKANOL ESTER SULFIDE STABILIZERS

ORGANOTIN MERCAPTOALKANOL ESTERS AND ALKOXIDES CONTAINING SULFIDE GROUPS

SULFIDE CONTAINING TIN STABILIZERS

PROCEDE DE PREPARATION DE COMPOSES ORGANIQUES D'ETAIN

On prépare les dérivés organiques d'étain d'esters mercaptoalcooliques de formule : ...

LIQUID ORGANOTINTHIOALKANOL STABILIZER COMPOSITIONS AND VINYL HALIDE RESIN COMPOSITIONS CONTAINING THE SAME

This invention relates to heat and light stabilizer compositions for vinyl halide resin compositions comprising organotinthioalkanol compounds that are stabilized against gelation and precipitation, to methods of preparing the stabilizer compositions, and to stabilized vinyl halide resin compositions.

CARBOFUNCTIONAL SULFUR AND CARBOXYLATE BRIDGED TIN COMPOUNDS

NOUVEAUX SULFURES OU POLYSULFURES ORGANO-STANNIQUES D'ESTERS DE MERCAPT NOUVEAUX SULFURES OU POLYSULFURES ORGANO-STANNIQUES D'ESTERS DE MERCAPTO-ALCANOLS ET LEUR APPLICATION A LA STABILISATION DE POLYMERES

L'invention concerne de nouveaux sulfures ou polysulfures organo-stanniques d'esters de mercaptoalcanols. Les nouveaux composés de l'invention portent au moins un groupe sulfure ou polysulfure à pontage étain-à-étain et au moins un groupe organique oxygéné lie à de l'étain par un atome de carbone. Les composés de l'invention conviennent pour stabiliser des polymères, notamment des polymères halogenés, afin d'en éviter l'altération.

MELANGES STABILISANTS ORGANOSTANNIQUES, LEUR APPLICATION A LA STABILISATION DE MATIERES THERMOPLASTIQUES CHLOREES, ET MATIERES THERMOPLASTIQUES AINSI STABILISEES

L'INVENTION CONCERNE DES MELANGES STABILISANTS QUE L'ON PEUT OBTENIR EN FAISANT REAGIR UN TRIHALOGENURE DE MONO-ORGANO-ETAIN DE FORMULE I:RSN(HAL)(I)AVEC UNE QUANTITE EQUIVALENTE, RELATIVEMENT A LA TENEUR EN HALOGENE DE CE TRIHALOGENURE D'ORGANO-ETAIN, D'UN MELANGE CONSTITUE D'UN ESTER D'ACIDE MERCAPTO-CARBOXYLIQUE DE FORMULEII:HS(CH)COOR(II)ET D'UN SULFURE DE METAL ALCALIN, EN PRESENCE D'UN HYDROXYDE DE METAL ALCALIN, LE RAPPORT MOLAIRE DE L'ESTER MERCAPTO-CARBOXYLIQUE (II) AU SULFURE DE METAL ALCALIN ETANT COMPRIS ENTRE 97:3 ET 18:82. DANS LES FORMULES PRECEDENTES, R DESIGNE UN RADICAL ALKYLE, HAL REPRESENTE CL, BR OU I, R REPRESENTE UN RADICAL ALKYLE OU ALCENYLE ET N EST EGAL A 1 OU A 2. CES MELANGES STABILISANTS CONVIENNENT NOTAMMENT POUR LA STABILISATION DE MATIERES THERMOPLASTIQUES CONTENANT DU CHLORE.

Improvements in or relating to the Stabilization of Halogen-Containing Polymeric Materials

NOVEL CHEMICAL COMPOUNDS AND STABILIZED HALOGEN- CONTAINING RESINS

ALKYLTIN POLYSULFIDE THIOESTER STABILIZED COMPOSITION

Liquid organotinthioalkanol stabilizer compositions, preparation and use thereof and vinyl halide resin compositions containing them

This invention relates to heat and light stabilizer compositions for vinyl halide resin compositions comprising organotinthioalkanol compounds that are stabilized against gelation and precipitation, to methods of preparing the stabilizer compositions, and to stabilized vinyl halide resin compositions. The stabilizer contains 0-10wt% bound chlorine and 0.1-10wt% of a free mercaptan.

STABILIZERS OF I TIN, I CONTEND SULFETO

ORGANIC DERIVATIVES OF TIN SULFIDES

CARBOFUNCTIONAL SULFUR AND CARBOXYLATE BRIDGED TIN COMPOUNDS

PROCESS TO PREPARE A MADE UP OF ORGANO-ESTANHO

Organotin compounds and pesticides containing them

Liquid organotinthioalkanol stabilizer compositions, preparation and use thereof and vinyl halide resin compositions containing them

ORGANIC MADE UP OF I TIN AND CHLORIDE POLYMER COMPOSITION OF VINILA STABILIZED THERMALLY

ORGANOTIN STABILIZER MIXTURES, THEIR USE FOR STABILIZATION OF THERMOPLASTIC MATERIALS CHLORINATED, AND THERMOPLASTIC MATERIALS SUCH STABILIZED.

PROCEEDED OF PREPARATION OF COMPOSE ORGANIC Of TIN

Pesticide containing organic tin compound

LIQUID ORGANOTINTHIOALKANOL STABILIZER COMPOSITION AND VINYL HALIDE RESIN COMPOSITION CONTAINING THE SAME

PURPOSE: To provide a heat and light stabilizer compsn. for vinyl halide resin compsns., comprising an organotinthioalkanol compd. that is stabilized against gelation and precipitation. CONSTITUTION: An organotinthioalkanol stabilizer compsn. substantially free from gelation and precipitation prepared by incorporating an organotin chloride so that the compsn. contains 0 to 10 wt.%, pref. 0.1 to 2 wt.%, of combined chlorine as an unreacted organotin chloride to be incorporated into the compsn. or remaining therein and 0.1 to 10%, pref. 0.1 to 5%, of free mercaptan (e.g. an alkylmercaptan, mercapto acid). At least 0.1%, pref. 0.1 to 5 %, of this compsn. is incorporated into a vinyl halide resin. COPYRIGHT: (C)1993,JPO ...

NOVEL ORGANO-TIN COMPOUNDS

ORGANO COMPOSITES I TIN I CONTEND SULPHUR, AND COMPOSITIONS POLIMERICAS STABILIZED WITH THE SAME ONES

ORGANO DISTANATHIANES AND THE PREPARATION THEREOF

STABILIZING FOR POLYMERIC POLYMERS AND COMPOSITIONS WHILE CONTAINING

ORGANOTIN COMPOUND STABILIZERS FOR HALOGENATED POLYMERS

Sulfide containing tin stabilizers

A polyvinyl chloride resin stabilizer is provided having a high concentration of tin, in the range from about 10% to about 42% by weight, and a high concentration of sulfur, within the range from about 8% to about 42% sulfur, comprising at least one monoorganotin or diorganotin mercapto alkanol carboxylic ester (or mercapto alkyl carboxylate), mono or poly sulfide and preferably mixed monoorganotin and diorganotin mercaptoalkyl carboxylic acid ester sulfides, especially having 4 to 50% of the diorganotin compound. Polyvinyl chloride resin compositions are also provided, containing these compounds.

ORGANIC COMPOUNDS OF TIN AND SULFUR AND THEIR USE

Organotin compounds and pesticides containing them

A compound of the formula: см. иллюстрацию в PDF-документе in which R1 represents alkyl, cycloalkyl or aralkyl, R* represents fluorophenyl or trifluoromethylphenyl when R1 is alkyl; R* represents dichlorophenyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: см. иллюстрацию в PDF-документе wherein R2 represents halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is cycloalkyl; or R* represents 2-thienyl, 3-thienyl, neopentyl, trimethylsilylmethyl, imethylphenylsilylmethyl or a group of the formula: см. иллюстрацию в PDF-документе wherein R3, R4 and R5 independently represent hydrogen, halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is aralkyl, m represents 1 or 2, and X represents halogen, imidazolyl, triazolyl, phenylthio or a radical selected from the group consisting of: см. иллюстрацию в PDF-документе wherein R6 represents alkyl, R7 and R8 independently represent lower alkyl and R9 and R10 independently represent hydrogen ...

PROCESS OF STABILIZING POLYVINYL CHLORIDE RESINS AND THE PRODUCT

Organotin mercaptoalkanol ester sulfide stabilizers for PVC resins

Halogen containing polymers are stabilized against deterioration by novel organotin mercaptoalkanol ester sulfides or polysulfides characterized by having at least one sulfide or polysulfide bridged tin to tin group and at least one oxygen containing organic group bonded to tin through a carbon atom.

ORGANOTIN STABILIZER COMPOSITION CONTAINING MORE THAN 18% TIN AND RESIN COMPOSITIONS CONTAINING THE SAME

Organotin compounds and pesticides containing them

A compound of formula (I) in which R1 represents alkyl, cycloalkyl or aralkyl, R* represents fluorophenyl or trifluoromethylphenyl when R1 is alkyl; R* represents dichlorophenyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: wherein R² represents halogen, trifluoromethyl, or lower alkoxy when R1 is cycloalkyl; or R* represents 2-thienyl, 3-thienyl, neopenthyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: wherein R3, R4 and R5 independently represent hydrogen, halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is aralkyl, m represents 1 or 2, and X represents halogen, imidazolyl, triazolyl, phenylthio or a radical selected from the group consisting of: wherein R6 represents alkyl, R7 and R8 independently represent lower alkyl and R9 and R10 independently represent hydrogen or lower alkyl when m is 1; or they independently represent oxygen, sulfur or a radical selected from: ...

Organotin compounds and resins or polymers stabilized therewith

NOVEL ORGANOTIN COMPOUND AND THERMALLY STABILIZED VINYL CHLORIDE POLYMER COMPOSITION CONTAINING SAME

Organotin compounds

Organotin compounds of formula см. иллюстрацию в PDF-документе where a is 0 or 1, x, x', y and y' are 1-6, R1, R2 R6 and R7 are C1-12 alkyl, cycloalkyl, aromatic or aralkyl hydrocarbyl, R4 and R9 are as defined for R1 or are C13-21 alkyl, C2-21 alkenyl or substituted aromatic hydrocarbyl, R3, R5, R8 and R10 are as defined for R4 or are hydrogen or a pair of R3 and R5 or R8 together with the carbon atom to which they are joined forms a cycloalkyl ring and X is O or S, are stabilizers for halogen containing resins, especially PVC.

ORGANOTIN STABILIZER, THERMOPLASTIC RESIN CONTAINING SAME AND STABILIZATION

STABILIZED POLYVINYLCHLORIDE

Organotin compounds and pesticides containing them

A compound of the formula: см. иллюстрацию в PDF-документе in which R1 represents alkyl, cycloalkyl or aralkyl, R* represents fluorophenyl or trifluoromethylphenyl when R1 is alkyl; R* represents dichlorophenyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: см. иллюстрацию в PDF-документе wherein R2 represents halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is cycloalkyl; or R* represents 2-thienyl, 3-thienyl, neopentyl, trimethylsilylmethyl, dimethylphenylsilylmethyl or a group of the formula: см. иллюстрацию в PDF-документе wherein R3, R4 and R5 independently represent halogen, trifluoromethyl, lower alkyl or lower alkoxy when R1 is aralkyl, m represents 1 or 2, and X represents halogen, imidazolyl, triazolyl, phenylthio or a radical selected from the group consisting of: см. иллюстрацию в PDF-документе wherein R6 represents alkyl, R7 and R8 independently represent lower alkyl and R9 and R10 independently represent hydrogen or lower ...

PROCESS FOR OBTAINING MIXTURES OF STABILIZERS, METHOD FOR THE STABILIZATION OF THERMOPLASTIC SUBSTANCES CONTAINING CHLORINE AND USE

LIQUID ORGANOTINTHIOALKANOL STABILIZER COMPOSITIONS, PREPARATION AND USE THEREOF AND VINYL HALIDE RESIN COMPOSITIONS CONTAINING THEM

COMPOUND, PROCESS FOR PREPARING IT AND GUANIDINE DERIVATIVES

REACTION PRODUCT OF A DIALKYLTIN DIFLUORIDE AND A DIALKYLTIN SULFIDE AND THE PROCESS THEREOF

JUKISUZUKAGOBUTSU NO SEIHO

Method for preparing organotin compounds

Organotin derivatives of mercaptoalcohol esters that correspond to the general formula см. иллюстрацию в PDF-документе wherein R and R' are hydrocarbon and m is 2 or 3, are prepared by sequentially reacting a monoorganotin trihalide with stoichiometric amounts of a base, a mercaptoalcohol, an alkali metal sulfide or disulfide and a carboxylic acid or an ester thereof. The present method offers advantages over the prior art, which teaches reacting an esterified mercaptoalcohol with an organotin halide, oxide or organostannoic acid. Compounds wherein R' is n-heptyl are unique in that they do not exhibit the disagreeable odor that characterizes this class of compounds.

Carbofunctional sulfur and carboxylate bridged tin compounds

Organotin compounds are prepared having (1) at least two tin atoms linked by a bridge through sulfur, carboxylate or both and containing at least two carbon atoms in the bridge, (2) directly attached to the tin atoms one to two alkyl groups containing one to eight carbon atoms and (3) a mercaptoalkanol or derivative thereof. The compounds are useful to stabilize halogen containing vinyl and vinylidene polymers, e.g. polyvinyl chloride.

ORGANOTIN COMPOUND

Novel organotin stabilizer compositions

A stabilizer composition for a polymer is described, said composition comprising a chemically combined structure of the formula см. иллюстрацию в PDF-документе wherein R is a group having the formula см. иллюстрацию в PDF-документе wherein R1, R2, R3 and R4 are independently a hydrogen atom, or an alkyl or substituted alkyl group having 1 to 18 carbon atoms, with the proviso that at least one of R1 and R2 contains adjacent to the group HC- a carbonyl group which forms a part of an acid group, ester group, acid halide group, ketone group or aldehyde group; and X is --S(CH2)y --COOR5 or --S(CH2)y --OCOR5, wherein y is 1 or 2, or --SR5, --OCOR5 or --OCOCH=CHCOOR5, R5 being an alkyl or substituted alkyl group having 1 to 18 carbon atoms.

Process for the stabilisation of polyvinylchloride

Storage stable liquid organotinthioalkanol PVC stabilizer

The invention comprises a method for preparing a stabilizer comprising organotinthioalkanol comprising reacting the ingredients in a mixture comprising both alkyltin and dialkyltin containing compounds, a thioalkanol, an additional sulfur containing compound and optionally an oxygen containing compound. The amount of thioalkanol in the composition is limited to no more than about 0.5000 equivalent per equivalent of the alkyltin and dialkyltin containing compounds. There is also present from about 1 percent by weight to about 50 percent by weight, based on the weight of the organotinthioalkanol stabilizer of a low volatility, low water solubility, aliphatic hydroxyl-containing, liquid organic compound that is introduced into the reaction mixture following completion of the reaction. The invention includes the organotinthioalkanol stabilizer made by the above method.

Method for preparing bis(organotin mercaptoalkanol ester) sulfides

Organotin derivatives of mercaptoalcohol esters that correspond to the general formula см. иллюстрацию в PDF-документе wherein R and R' are hydrocarbon, m is 2 or 3, and p is 1 or 2 are prepared by sequentially reacting a quantity of a monoorganotin trihalide, a diorganotin dihalide or an equimolar mixture of a mono- and a diorganotin halide containing n moles of halogen with n-2 equivalent weights of a base, n-2 moles of a mercaptoalcohol, 0.5 mole of an alkali metal sulfide when p is 1 or an alkali metal disulfide when p is 2, for every mole of tin present and n-2 moles of an carboxylic acid or ester thereof. The present method offers advantages over the prior art, which teaches reacting an esterified mercaptoalcohol with an organotin halide, oxide or organostannoic acid. Compounds wherein R' is n-heptyl are unique in that they do not exhibit the disagreeable odor that characterizes this class of compounds.

PREPARATION OF ORGANOTIN COMPOUND

Sulfide containing tin stabilizers

A polyvinyl chloride resin stabilizer is provided having a high concentration of tin, in the range from about 10% to about 42% by weight, and a high concentration of sulfur, within the range from about 8% to about 42% sulfur, comprising at least one monoorganotin or diorganotin mercapto alkanol carboxylic ester (or mercapto alkyl carboxylate), mono or poly sulfide and preferably mixed monoorganotin and diorganotin mercaptoalkyl carboxylic acid ester sulfides, especially having 4 to 50% of the diorganotin compound. Polyvinyl chloride resin compositions are also provided, containing these compounds.

METHOD FOR PREPARING BIS(ALKYLDIPHENYL TIN) SULFIDE

ORGANOTIN MERCAPTO ALKANOL ESTER SULFIDE STABILIZER

Organotin mercaptoalkanol esters and alkoxides containing sulfide groups

This invention relates to novel organotin compounds containing at least one sulfur atom that is bonded exclusively to tin or to tin and hydrogen. The compounds are derivatives of mercaptoalkanols, which are present as the free alcohols, as esters of polycarboxylic acids, esters of acids containing specified non-metallic elements or as alkoxides of specified metallic elements. The compounds are effective catalysts for a variety of reactions and impart heat stability to halogen-containing resins.

Liquid organotinthioalkanol stabilizer compositions and vinyl halide resin compositions containing the same

This invention relates to heat and light stabilizer compositions for vinyl halide resin compositions comprising organotinthioalkanol compounds that are stabilized against gelation and precipitation, to methods of preparing the stabilizer compositions, and to stabilized vinyl halide resin compositions.

Carbofunctional sulfur and carboxylate bridged tin compounds

Organotin compounds are prepared having (1) at least two tin atoms linked by a bridge through sulfur, carboxylate or both and containing at least two carbon atoms in the bridge, (2) directly attached to the tin atoms one to two alkyl groups containing one to eight carbon atoms and (3) a mercaptoalkanol or derivative thereof. The compounds are useful to stabilize halogen containing vinyl and vinylidene polymers, e.g. polyvinyl chloride.

ORGANIC TIN COMPOUND AND MITICIDAL AND INSECTICIDAL AGENT CONTAINING SAME

NEW MATERIAL:The compound of formula I [R1 is alkyl, cycloalkyl, etc.; R* is fluorophenyl, group of formula II (R2 is halogen, trifluoromethyl or alkoxy), dichlorophenyl, neopentyl, trimethylsilylmethyl, etc.; m is 1 or 2; X is halogen, ester, imidazolyl, etc.]. EXAMPLE: Dineophyl-m-trifluoromethylphenyltin fluoride. USE: A miticidal and insecticidal agent. PREPARATION: The organic fluoride of formula I can be produced e.g. by reacting an organotin halide of formula III (Phe is phenyl; Y is halogen; n is 1 or 2) with a Grignard reagent, reacting the reaction product with halogen and reacting the resultant compound of formula IV (Hal is Cl, Br or I) with KF. COPYRIGHT: (C)1987,JPO&Japio ...

STABILIZER COMPRISING ORGANOTIN MERCAPTOALKANOL ESTER SULFIDE FOR ORGANIC POLYMER

SILAFLUORENE METALLOPORPHYRIN- BENZENE ORGANIC SEMICONDUCTOR MATERIAL AND PREPARING METHOD AND USES THEREOF

A silafluorene metalloporphyrin-benzene organic semiconductor material and preparing method and uses thereof are provided. The structure of the silafluorene metalloporphyrin-benzene organic semiconductor material is defined by structure formula (I); wherein: n is an integer between 1 and 100, R, R, R, Rare H, alkyl with C-C, phenyl, alkyl benzene or alkoxyl benzene containing one or more C-C, M is a metal ion. The silafluorene metalloporphyrin-benzene organic semiconductor material has good solubility, high carrier mobility, strong absorbance, wide absorbent range to light and elevated utilization ratio of solar light. Besides, the process of the preparing method is simple and easy to operate and control. 2. The silafluorenyl metalloporphyrin-benzene organic semiconductor material according to claim 1 , wherein said metal ion is Zn claim 1 , Cu claim 1 , Fe claim 1 , Co claim 1 , Cd claim 1 , Pt claim 1 , Zr claim 1 , Mn claim 1 , Ni claim 1 , Pb or Sn.4. The preparing method according to claim 3 , wherein claim 3 , in said step S1 claim 3 , molar ratio of said dipyrromethane claim 3 , the first silafluorene derivative and the second silafluorene derivative is a:(b+c)=1:1 claim 3 , where a≧b>0 claim 3 , and c≧0; said the first catalyst is propionic acid claim 3 , trifluoroacetic acid; said oxidant is 2 claim 3 ,3-dichloro-5 claim 3 ,6-dicyano-1 claim 3 ,4-benzoquinone; said the first organic solvent is one or two of trichloromethane and dichloromethane.5. The preparing method according to claim 3 , wherein claim 3 , in said step S2 claim 3 , the molar ratio of used said silafluorenyl porphyrin derivative to used said brominating agent is in the range of 1:2 to 1:5; said brominating agent is N-bromobutanimide; said the second organic solvent is at least one of tetrahydrofuran claim 3 , chloroform claim 3 , dimethylformamide and orthodichlorobenzene.6. The preparing method according to claim 3 , wherein claim 3 , in said step S3 claim 3 , molar ratio of said dibromo- ...

HIGH-PURITY LARGE-SCALE PREPARATION OF STANNSOPORFIN

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions. 1. A composition comprising stannsoporfin in an amount of at least about 10 grams , wherein said stannsoporfin is at least about 98.5% pure and where any individual impurity present is present in an amount of less than about 0.1%.2. The composition of claim 1 , comprising at least about 100 grams of stannsoporfin3. The composition of claim 1 , wherein said stannsoporfin is at least about 99% pure.4. The composition of claim 3 , wherein any individual impurity present is present in an amount of less than about 0.09%.5. The composition of claim 4 , comprising at least about 100 grams of stannsoporfin.6. The composition of claim 1 , wherein said stannsoporfin is a single-batch preparation of stannsoporfin.7. A method of making stannsoporfin claim 1 , comprising:a) exposing a metallic hydrogenation catalyst to a hydrogen atmosphere to form pre-hydrogenated catalyst; andb) contacting hernia with the pre-hydrogenated catalyst and maintaining the hemin and catalyst under one or more combinations of temperature, hydrogen pressure, and time sufficient to remove iron from the hemin and reduce the vinyl groups of the hernia to ethyl groups, thus forming mesoporphyrin IX.8. The method of claim 7 , further comprising:c) reacting mesoporphyrin IX with a tin (II) salt to form stannsoporfin using a controlled rate of oxidation.9. The method of claim 7 , wherein the metallic hydrogenation catalyst is palladium on carbon.10. The method of claim 9 , wherein in step a) claim 9 , the palladium on carbon is exposed to a hydrogen atmosphere of about 30 to 50 psi at a temperature of about 45-50° C. for about 8 to 16 hours.11. The method of claim 8 , wherein the reacting of mesoporphyrin IX with a tin (II) salt is performed in the absence of proton scavengers.12. The method of claim 8 , wherein step c) takes place in a reaction vessel having a headspace ...

PROCESS FOR PREPARING ORGANOTIN COMPOUNDS

Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices. 2. The process of claim 1 , wherein each R is independently a methyl claim 1 , ethyl claim 1 , propyl claim 1 , isopropyl claim 1 , n-butyl claim 1 , isobutyl claim 1 , t-butyl claim 1 , or sec-butyl group.3. The process of claim 1 , wherein each R is a methyl group.4. The process of claim 1 , wherein Ris a methyl claim 1 , ethyl claim 1 , propyl claim 1 , isopropyl claim 1 , n-butyl claim 1 , isobutyl claim 1 , t-butyl claim 1 , sec-butyl claim 1 , n-pentyl claim 1 , iso-pentyl claim 1 , or neopentyl group.5. The process of claim 1 , wherein Riis a cyclic C-Cgroup.6. The process of claim 1 , wherein Ris a vinyl group or an acetylenyl group.7. The process of claim 1 , wherein Ris substituted with one or more halogen groups.8. The process of claim 1 , wherein Ris an alkylether group.9. The process of claim 1 , wherein each R is a methyl group and Ris an isopropyl group.10. The process of claim 1 , wherein X is iodo.11. The process of claim 1 , wherein the process is conducted in a non-polar aprotic solvent.12. The process of claim 1 , wherein the process further comprises preparing the compound of Formula (A) by reacting tin(II) chloride with a compound of Formula M-N(R) claim 1 , wherein M is sodium claim 1 , lithium claim 1 , and potassium.13. The process of claim 12 , wherein the compound of Formula M-N(R)is Li—N(CH).14. The process of claim 12 , wherein the process is conducted in one reaction vessel.16. The compound of claim 15 , wherein each R is the same or different and is a C-Calkyl and X is iodo and bromo.17. The compound of claim ...

METHODS FOR SYNTHESIZING METAL MESOPORPHYRINS

Embodiments describe methods of synthesizing metal mesoporphyrin compounds. In embodiments, a metal mesoporphyrin compound may be formed by hemin transmetallation and subsequent hydrogenation of the tin protoporphyrin IX to form a metal mesoporphyrin. In other embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a protoporphyrin methyl ester from hemin and converting the protoporphyrin methyl ester intermediate to a metal mesoporphyrin compound through metal insertion and hydrogenation. In other embodiments, a metal mesoporphyrin compound may be formed from hemin by a hydrogen-free hydrogenation method to form a mesoporphyrin IX intermediate followed by metal insertion and hydrogenation. In embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX dihydrochloride intermediate compound and converting the mesoporphyrin IX intermediate to a metal mesoporphyrin compound through metal insertion. In embodiments, a metal mesoporphyrin compound may be formed directly from hemin without isolation of any intermediates. 1. A method of synthesizing a metal mesoporphyrin compound comprising:hydrogenating hemin with ferrous sulfate, palladium on carbon, and poly(methylhydrosiloxane) in formic acid to form a mesoporphyrin formate: converting the mesoporphyrin formate to a mesoporphyrin IX dihydrochloride intermediate compound;isolating the mesoporphyrin IX dihydrochloride intermediate compound; and inserting a metal into the mesoporphyrin IX dihydrochloride intermediate.2. The method of claim 1 , wherein the metal may be selected from tin claim 1 , iron claim 1 , zinc claim 1 , chromium claim 1 , manganese claim 1 , copper claim 1 , nickel claim 1 , magnesium claim 1 , cobalt claim 1 , platinum claim 1 , gold claim 1 , silver claim 1 , arsenic claim 1 , antimony claim 1 , cadmium claim 1 , gallium claim 1 , germanium claim 1 , and palladium.3. The method of claim 2 , wherein the metal is tin.4. The ...

Method of preparing luminescent nano-sheet, luminescent nano-sheet material, luminescent nano-sheet film, back light, and liquid crystal display apparatus

The present application discloses a method of preparing a luminescent nano-sheet. The method includes preparing a precursor emulsion solution containing a metal halide and RNH3X, and having a molar ratio of metal halide to RNH3X in a range of approximately 0.6 to approximately 0.8; demulsifying the precursor emulsion solution to obtain a perovskite quantum dots material and a demulsified solution; and forming the luminescent nano-sheet by allowing the perovskite quantum dots material self-assemble into the luminescent nano-sheet. X is a halide, R is selected from alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, cycloalkynyl, aryl, heteroaryl, and heterocyclyl.

METHODS FOR SYNTHESIZING METAL MESOPORPHYRINS

Embodiments describe methods of synthesizing metal mesoporphyrin compounds. In embodiments, a metal mesoporphyrin compound may be formed by hemin transmetallation and subsequent hydrogenation of the tin protoporphyrin IX to form a metal mesoporphyrin. In other embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a protoporphyrin methyl ester from hemin and converting the protoporphyrin methyl ester intermediate to a metal mesoporphyrin compound through metal insertion and hydrogenation. In other embodiments, a metal mesoporphyrin compound may be formed from hemin by a hydrogen-free hydrogenation method to form a mesoporphyrin IX intermediate followed by metal insertion and hydrogenation. In embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX dihydrochloride intermediate compound and converting the mesoporphyrin IX intermediate to a metal mesoporphyrin compound through metal insertion. In embodiments, a metal mesoporphyrin compound may be formed directly from hemin without isolation of any intermediates. 1. A method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX intermediate by a hydrogen-free hydrogenation , inserting a metal into the intermediate to and hydrogenating to form the metal mesoporphyrin compound.2. The method of claim 1 , wherein the mesoporphyrin IX intermediate is formed by hydrogenation with polymethylhydrosiloxane.3. The method of claim 2 , wherein the metal is selected from tin claim 2 , iron claim 2 , zinc claim 2 , chromium claim 2 , manganese claim 2 , copper claim 2 , nickel claim 2 , magnesium claim 2 , cobalt claim 2 , platinum claim 2 , gold claim 2 , silver claim 2 , arsenic claim 2 , antimony claim 2 , cadmium claim 2 , gallium claim 2 , germanium claim 2 , and palladium.4. The method of claim 1 , wherein tin is selected from tin oxide claim 1 , tin chloride claim 1 , tin sulfate claim 1 , tin bromide claim 1 , tin ...

MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″), where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption. 1. A composition comprising:{'sub': '3', 'a monoalkyl triamido tin compound represented by the chemical formula RSn-(NR′COR″), wherein R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms.'}2. The composition of wherein R′ is a methyl group.3. The composition of wherein R″ is a methyl group.4. The composition of wherein R′ is a methyl group and R″ is a methyl group.5. The composition of wherein R comprises methyl (CH—) claim 4 , ethyl (CHCH—) claim 4 , isopropyl (CHCHHC—) claim 4 , tert-butyl ((CH)C—) claim 4 , tert-amyl (CHCH(CHCH)C—) claim 4 , sec-butyl (CH(CHCH)HC—) claim 4 , neopentyl (CH)CCH—) claim 4 , cyclohexyl claim 4 , cyclopentyl claim 4 , cyclobutyl claim 4 , or cyclopropyl.6. The composition of wherein the composition is crystalline and comprises no more than about 1 mole percent dialkyl tin contaminants.7. The composition of wherein R comprises methyl (CH—) claim 1 , ethyl (CHCH—) claim 1 , isopropyl (CHCHHC—) claim 1 , tert-butyl ((CH)C—) claim 1 , tert-amyl (CHCH(CHCH)C—) claim 1 , sec-butyl (CH(CHCH)HC—) claim 1 , neopentyl (CH) ...

POLYCYCLIC AROMATIC COMPOUND

The invention provides a polycyclic aromatic compound or a salt thereof having a partial structure represented by the following general formula (I): 3. The polycyclic aromatic compound or salt thereof according to claim 1 , wherein the heteroaromatic ring in ring A claim 1 , ring B claim 1 , ring C claim 1 , or ring D is thiophene claim 1 , pyrrole claim 1 , or pyridine.6. (canceled)8. (canceled)9. An electrochemical device comprising the compound according to .10. The electrochemical device according to claim 9 , wherein the device is an organic light-emitting element claim 9 , an organic thin-film transistor claim 9 , or an organic thin-film solar cell. The present invention relates to a new compound. Specifically, the present invention relates to a polycyclic aromatic compound including a nitrogen atom, and another heteroatom or a metal atom. The present invention also relates to electrochemical devices, such as organic thin-film solar cells, organic thin-film transistors, and organic light-emitting elements such as organic light-emitting diodes and organic EL devices, including the compound.Hitherto, research has been conducted on α-NPD, rubrene, Alq3, PBD, and the like, as a luminescent material and an organic semiconductor material used in organic light-emitting elements such as organic EL devices and organic light-emitting diodes (Patent Literature 1 to 3).In an organic light-emitting element, a thin film including a fluorescent organic compound or a phosphorescent organic compound is sandwiched between a positive electrode and a negative electrode. The element utilizes light radiated when an exciton of the fluorescent compound or the phosphorescent compound, generated through injection of electron or hole (positive hole) from the respective electrodes, returns to a ground state.Recent progresses regarding organic light-emitting elements have been remarkable. Since the elements have characteristics enabling realization of a lightweight and thin luminous ...

High-purity large-scale preparation of stannsoporfin

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions.

Methods to produce organotin compositions with convenient ligand providing reactants

Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′ 3 ) 3 , R′R″ACSnL 3 , where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R′″O)CSnL 3 or R′R″(N≡C)CSnZ 3 .

HIGH-PURITY LARGE-SCALE PREPARATION OF STANNSOPORFIN

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions. 1. A composition comprising stannsoporfin in an amount of at least about 10 grams , wherein said stannsoporfin is at least about 98.5% pure and where any individual impurity present is present in an amount of less than about 0.1%.2. The composition of claim 1 , comprising at least about 100 grams of stannsoporfin.3. The composition of claim 1 , wherein said stannsoporfin is at least about 99% pure.4. The composition of claim 3 , wherein any individual impurity present is present in an amount of less than about 0.09%.5. The composition of claim 4 , comprising at least about 100 grams of stannsoporfin.6. The composition of claim 1 , wherein said stannsoporfin is a single-batch preparation of stannsoporfin.7. A method of making stannsoporfin claim 1 , comprising:a) exposing a metallic hydrogenation catalyst to a hydrogen atmosphere to form pre-hydrogenated catalyst; andb) contacting hemin with the pre-hydrogenated catalyst and maintaining the hemin and catalyst under one or more combinations of temperature, hydrogen pressure, and time sufficient to remove iron from the hemin and reduce the vinyl groups of the hemin to ethyl groups, thus forming mesoporphyrin IX.8. The method of claim 7 , further comprising:c) reacting mesoporphyrin IX with a tin (II) salt to form stannsoporfin using a controlled rate of oxidation.9. The method of claim 7 , wherein the metallic hydrogenation catalyst is palladium on carbon.10. The method of claim 9 , wherein in step a) claim 9 , the palladium on carbon is exposed to a hydrogen atmosphere of about 30 to 50 psi at a temperature of about 45-50° C. for about 8 to 16 hours.11. The method of claim 8 , wherein the reacting of mesoporphyrin IX with a tin (II) salt is performed in the absence of proton scavengers.12. The method of claim 8 , wherein step c) takes place in a reaction vessel having a headspace ...

OPTOELECTRONIC DEVICES WITH ORGANOMETAL PEROVSKITES WITH MIXED ANIONS

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X]wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. 187-. (canceled)88. A perovskite of the formula (I){'br': None, 'sub': '3', '[A][B][X]\u2003\u2003(I)'} [{'sub': 5', '6', '7', '8, 'sup': '+', '[A] is at least one cation, comprising at least one organic cation of the formula (RRN═CH—NRR), wherein, {'sub': 5', '1', '20, '(i) Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or substituted aryl;'}, {'sub': 6', '1', '20, '(ii) Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or substituted aryl;'}, {'sub': 7', '1', '20, '(iii) Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or substituted aryl; and'}, {'sub': 8', '1', '20, '(iv) Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or substituted aryl, '[B] is at least one divalent metal cation; and', '[X] is at least one halide anion., 'wherein891. A perovskite according to wherein [A] is at least one organic cation of the formula (RRN═CH—NRR) claim 88 , wherein R claim 88 , R claim 88 , Rand Rare as defined in claim .90. A perovskite according to wherein the at least one ...

PHOTORESIST FOR SEMICONDUCTOR FABRICATION

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules. 1. An organometallic precursor , comprising:an aromatic di-dentate ligand;a transition metal coordinated to the aromatic di-dentate ligand; andan extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,wherein the aromatic di-dentate ligand comprises a plurality of pyrazine molecules.2. The organometallic precursor of claim 1 , wherein the aromatic di-dentate ligand comprises 2 claim 1 ,2′-bipyrazine.3. The organometallic precursor of claim 1 , wherein the transition metal has a high atomic absorption cross section.4. The organometallic precursor of claim 1 , wherein the transition metal is selected from a group consisting of tin (Sn) claim 1 , bismuth (Bi) claim 1 , antimony (Sb) claim 1 , indium (In) claim 1 , and tellurium (Te).5. The organometallic precursor of claim 1 , further comprising:poly(2-hydroxyethyl methacrylate) (pHEMA), poly(4-hydroxystyrene) (PHS), polyglycidyl ether, or polyether polyol.6. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises an alkenyl group or a carboxylate group.7. The organometallic precursor of claim 1 , wherein the EUV cleavable ligand comprises a fluoro-substitute.8. An extreme ultraviolet (EUV) photoresist precursor claim 1 , comprising:an aromatic di-dentate ligand comprising a first pyrazine ring and a second pyrazine ring;a transition metal coordinated to a nitrogen atom on the first pyrazine ring and a nitrogen atom on the second pyrazine ring;a first EUV cleavable ligand coordinated to the transition metal; anda second EUV cleavable ligand coordinated to the transition metal.9. The EUV ...

ZIRCONIUM, HAFNIUM, TITANIUM PRECURSORS AND DEPOSITION OF GROUP 4 CONTAINING FILMS USING THE SAME

Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L—M-CR-[(CER)-(CER)—O]-, wherein M is Ti, Zr, or Hf bonded in an ηbonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C—Chydrocarbon group; each L is independently a -1 anionic ligand selected from the group consisting of NR′, OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is H or a C—Chydrocarbon group; and adjacent R′s may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes. 21. The Group 4 transition metal-containing film forming composition of claim 1 , wherein the - anionic ligand is selected from the group consisting of NR′ claim 1 , OR′ claim 1 , Cp claim 1 , amidinate claim 1 , β-diketonate claim 1 , and keto-iminate claim 1 , wgerein R′ is H or a C-Chydrocarbon group.3. The Group 4 transition metal-containing film forming composition of claim 2 , wherein E is C.4. The Group 4 transition metal-containing film forming composition of claim 3 , wherein M is Ti.501. The Group 4 transition metal-containing film forming composition of claim 4 , wherein the Group 4 transitional metal precursor is selected from the group consisting of (NH)-Ti—CH-[(CH)—O]— claim 4 , (NMe)-Ti—CH-[(CH)—O]— claim 4 , (NEt)-Ti-CH-[(CH)—O]— claim 4 , (NPr)-Ti—CH-[(CH)—O]— claim 4 , (NPr)-Ti—CH-[(CH)—O]— claim 4 , (NBu)-Ti—CH-[(CH)—O]— claim 4 , (NBu)-Ti—CH-[(CH)—O]— claim 4 , (NBu)-Ti—CH-[(CH)—O]— claim 4 , (NBu)-Ti—CH-[(CH)—O]— claim 4 , (NHMe)-Ti—CH-[(CH)—O]— claim 4 , (NHEt)-Ti—CH-[(CH)—O]— claim 4 , (NHPr)-Ti—CH-[(CH)—O]— claim 4 , (NHPr)-Ti—CH-[(CH)—O]— claim 4 , (NHBu)-Ti—CH-[(CH)—O]— claim ...

OPTOELECTRONIC DEVICES WITH ORGANOMETAL PEROVSKITES WITH MIXED ANIONS

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed halide perovskite of the formula (I) [A][B][X]wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. 1. An optoelectronic device comprising a mixed-anion perovskite , wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.2. An optoelectronic device according to wherein the mixed-anion perovskite comprises a first cation claim 1 , a second cation claim 1 , and said two or more different anions.3. An optoelectronic device according to wherein the second cation is a metal cation.4. An optoelectronic device according to wherein the metal cation is a divalent metal cation.5. An optoelectronic device according to or wherein the metal cation is selected from Sn and Pb.6. An optoelectronic device according to any of to wherein the first cation is an organic cation.7. An optoelectronic device according to wherein the organic cation has the formula (RRRRN) claim 6 , wherein:{'sub': 1', '1', '20, 'Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or substituted aryl;'}{'sub': 2', '1', '20, 'Ris hydrogen, unsubstituted or substituted C-Calkyl, or unsubstituted or ...

HIGH-PURITY LARGE-SCALE PREPARATION OF STANNSOPORFIN

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions. 132.-. (canceled)33. A method for producing a tin (IV) mesoporphyrin compound or salt thereof comprising: (1) exposing a metallic hydrogenation catalyst to a hydrogen atmosphere to form a pre-hydrogenated catalyst; and', '(2) contacting hemin with the pre-hydrogenated catalyst and maintaining the hemin and catalyst under one or more combinations of temperature, hydrogen pressure, and time to remove iron from the hemin and to reduce the vinyl groups of the hemin to ethyl groups, thus forming mesoporphyrin IX,', '(3) isolating the mesoporphyrin IX as mesoporphyrin IX formate;', '(4) purifying the isolated mesoporphyrin IX formate;', '(5) converting the purified mesoporphyrin IX formate into mesoporphyrin IX dihydrochloride:, 'a. preparing a solution or suspension of mesoporphyrin IX dihydrochloride or a salt thereof byb. adding an organic solvent to the mesoporphyrin IX dihydrochloride to form the solution or suspension of mesoporphyrin IX dihydrochloride or a salt thereof, preparing a solution or suspension of tin (II) oxide, wherein steps (a) and (b) can occur in any order or simultaneously;c. contacting the solution or suspension of tin (II) oxide with the solution or suspension of mesoporphyrin IX dihydrochloride or salt thereof by dropwise addition of the solution or suspension of mesoporphyrin IX dihydrochloride or salt thereof to form the tin (IV) mesoporphyrin compound or salt thereof; andd. purifying the tin (IV) mesoporphyrin IX compound via hot acid trituration, followed by, treatment at high pH at or above pH 9 followed by re-acidification, and subsequent hot acid trituration.34. The method of claim 33 , wherein the solution or suspension of tin (II) oxide and the solution or suspension of mesoporphyrin IX dihydrochloride or salt thereof are independently prepared with formic acid or acetic acid.35. The method of claim ...

METHODS FOR SYNTHESIZING METAL MESOPORPHYRINS

Embodiments describe methods of synthesizing metal mesoporphyrin compounds. In embodiments, a metal mesoporphyrin compound may be formed by hemin transmetallation and subsequent hydrogenation of the tin protoporphyrin IX to form a metal mesoporphyrin. In other embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a protoporphyrin methyl ester from hemin and converting the protoporphyrin methyl ester intermediate to a metal mesoporphyrin compound through metal insertion and hydrogenation. In other embodiments, a metal mesoporphyrin compound may be formed from hemin by a hydrogen-free hydrogenation method to form a mesoporphyrin IX intermediate followed by metal insertion and hydrogenation. In embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX dihydrochloride intermediate compound and converting the mesoporphyrin IX intermediate to a metal mesoporphyrin compound through metal insertion. In embodiments, a metal mesoporphyrin compound may be formed directly from hemin without isolation of any intermediates. 1. A method of synthesizing a metal mesoporphyrin compound comprising forming a protoporphyrin methyl ester and inserting a metal into the protoporphyrin methyl ester and hydrogenating the metal protoporphyrin methyl ester.2. The method of claim 1 , wherein the metal is selected from tin claim 1 , iron claim 1 , zinc claim 1 , chromium claim 1 , manganese claim 1 , copper claim 1 , nickel claim 1 , magnesium claim 1 , cobalt claim 1 , platinum claim 1 , gold claim 1 , silver claim 1 , arsenic claim 1 , antimony claim 1 , cadmium claim 1 , gallium claim 1 , germanium claim 1 , and palladium.3. The method of claim 2 , wherein tin is selected from tin oxide claim 2 , tin chloride claim 2 , tin sulfate claim 2 , tin bromide claim 2 , tin oxalate claim 2 , tin pyrophosphate hydrate claim 2 , tin 2-ethylhexanoate claim 2 , tin methanesulfonic acid claim 2 , and tin ...

METHOD OF FORMING TIN-CONTAINING MATERIAL FILM AND METHOD OF SYNTHESIZING A TIN COMPOUND

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): 110.-. (canceled)12. The method as claimed in claim 11 , wherein:{'sub': 2', '3', '2', '2', '2', '2', '2', '2', '2', '3', '3', '2, 'the reactant includes O, O, plasma O, HO, NO, NO, NO, CO, HO, HCOOH, CHCOOH, (CHCO)O, or mixtures thereof, and'}the tin-containing material film is a tin oxide film.13. The method as claimed in claim 12 , wherein the tin oxide film includes a rutile crystal phase.14. The method as claimed in claim 11 , wherein:{'sub': '3', 'the reactant includes NH, a monoalkylamine, a dialkylamine, a trialkylamine, an organic amine compound, a hydrazine compound, or mixtures thereof, and'}the tin material film is a tin nitride film.15. The method as claimed in claim 11 , wherein the tin precursor compound has a substantially constant atomic layer deposition rate in a temperature range of about 270° C. to about 350° C.16. The method as claimed in claim 11 , wherein the tin precursor compound has a substantially constant atomic layer deposition rate in a temperature range of about 270° C. to about 320° C.17. The method as claimed in claim 11 , wherein the tin-containing material film does not include halogen elements.18. The method as claimed in claim 11 , wherein forming the monolayer of the tin precursor compound having the structure represented by Chemical Formula (I) on the substrate in the reaction space includes supplying the tin precursor compound having the structure represented by Chemical Formula (I) onto the substrate for about 1 second to about 100 seconds.19. The method as claimed in claim 11 , wherein the tin-containing material film is a conductive barrier film claim 11 , a tunnel barrier film of a gate dielectric film claim 11 , a barrier metal film for liquid crystals claim 11 , a member for thin film solar ...

METHOD FOR PREPARING TRITYL CANDESARTAN

The present invention uses a candesartan cyclic compound as a starting material and performs thereon a three-step reaction of forming tetrazole, hydrolysis and adding a protecting group to directly obtain trityl candesartan without separating an intermediate product via crystallization. The operating process is simple and thus is more applicable to industrial production. 2. The method according to claim 1 , wherein the organic solvent in step (a) is selected from toluene claim 1 , xylene claim 1 , N claim 1 ,N-dimethylformamide claim 1 , or N claim 1 ,N-dimethylacetamide.3. The method according to claim 1 , wherein the trialkyl tin azide in step (a) is tributyl tin azide.4. The method according to claim 1 , wherein the alkali metal hydroxide in step (b) is selected from potassium hydroxide or sodium hydroxide.5. The method according to claim 1 , wherein the acid in step (c) is selected from hydrochloric acid claim 1 , acetic acid or a mixture of them.6. The method according to claim 5 , wherein the acid in step (c) is acetic acid.7. The method according to claim 1 , wherein pH value in step (c) is in a range of 4-7.8. The method according to claim 7 , wherein the pH value in step (c) is in a range of 5-6.9. The method according to claim 1 , wherein the organic solvent in step (d) is selected from toluene claim 1 , xylene claim 1 , or dichloromethane.10. The method according to claim 9 , wherein the organic solvent in step (d) is dichloromethane.11. The method according to claim 1 , wherein the organic base in step (d) is triethylamine. The present invention relates to the field of synthesizing drug intermediates, in particular to a method for preparing trityl candesartan.Candesartan cilexetil is an antihypertensive drug, which has a structural formula represented by the following formula I.Because candesartan cilexetil does not inhibit kininase II, it does not affect the response to bradykinin. It is an antihypertensive drug having good market prospects.Both of ...

Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material film

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a Cl to C4 linear or branched alkyl group.

ORGANOMETALLIC COMPOUNDS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE AND DRY ETCHING OF THE TIN OXIDE FILMS AND DEPOSITION REACTORS

Specific organometallic compounds of Formula I: Q-Sn-(AR′)or Formula II: Sn(NR(CH)A)useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive. 1: An organometallic compound of Formula I:{'br': None, 'sub': x', '2', '4-x, 'sup': '1', 'Q-Sn—(NR′)\u2003\u2003Formula I'}wherein:{'sup': '1', 'Q is ORor Cp;'}{'sup': '1', 'each Rgroup is independently selected from the group consisting of an alkyl group having from 1 to 10 carbon atoms and an aryl group;'}{'sup': '1', 'each R′ group is independently selected from the group consisting of an alkyl or acyl group having from 1 to 10 carbon atoms and an aryl group;'}x is an integer from 1 to 4; andQ is Cp when x is 4.2: The organometallic compound according to claim 1 , wherein x is an integer from 1 to 3.3: The organometallic compound according to claim 1 , wherein Q is OR.4: The organometallic compound according to claim 1 , wherein Q is Cp.5: The organometallic compound according to claim 4 , wherein x is 1.6: The organometallic compound according to claim 1 , wherein each R′ group is independently selected from the group consisting of an alkyl group having from 1 to 4 carbon atoms.7: The organometallic compound according to claim 1 , wherein each R′ group is Me.8: The organometallic compound according to claim 1 , wherein claim 1 , when z is 2 claim 1 , each R′ represents a combination of two different alkyl claim 1 , acyl claim 1 , or aryl groups.9: The organometallic compound according to claim 1 , wherein x is 4.10: The organometallic compound according to claim 1 , wherein each Rgroup is independently selected from the group consisting of ...

ARYLOXY-PHTHALOCYANINES OF GROUP IV METALS

The present disclosure relates to a compound comprising an aryloxy-phthalocyanine compound of group IV metals, a method for preparing said compound and an article of manufacture made therefrom.

MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″), where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption. 1. A compound represented by the formula (CH)CHSn(N(CH)).2. A high purity liquid composition comprising a mixture of the compound according to and no more than 4 mole % dialkyltin compounds as an impurity relative to the total tin amount.3. A composition comprising a mixture of the compound according to and one or more alkyl-tin compounds with a different alkyl ligand relative to the cyclohexyl compound and no more than 4 mole % dialkyltin compounds as an impurity relative to the total tin amount.4. The composition of wherein the different alkyl ligand is methyl claim 3 , ethyl claim 3 , tert-butyl claim 3 , tert-amyl claim 3 , or a combination thereof.5. A solution comprising an organic solvent and the compound according to .6. The solution of comprising no more than 4 mole % dialkyltin compounds as an impurity relative to the total tin amount.7. The solution of having a concentration from about 0.01M to about 2M.8. The solution of wherein the organic solvent comprises an alkane claim 6 , an aromatic hydrocarbon claim 6 , an ether claim 6 , an alcohol claim 6 , or a mixture thereof.9. The solution of further comprising ...

ORGANOMETALLIC COMPOUNDS AND PURIFICATION OF SUCH ORGANOMETALLIC COMPOUNDS

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R—Sn-A 119-. (canceled)20. A high purity organometallic compound having a purity greater than 95% , the high purity organometallic compound being a compound of Formula I:{'br': None, 'sub': x', '4-x, 'R—Sn-A\u2003\u2003Formula I'} A is selected from the group consisting of (YaR′z) and a 3- to 7-membered N-containing heterocyclic group;', 'each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms;', 'each R′ group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms;', 'x is an integer from 0 to 4;', 'a is an integer from 0 to 1;', 'Y is selected from the group consisting of N, O, S, and P; and', 'z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P., 'wherein21. The high purity organometallic compound of claim 20 , wherein the purity is greater than 98%. This application is a Divisional of copending application Ser. No. 16/442,930, filed Jun. 17, 2019, which is a Continuation of PCT International Patent Application No. PCT/CA2018/050933 filed Jul. 31, 2018, which claims priority to Canadian Application No. 2975104 filed Aug. 2, 2017, all of which are incorporated by reference in their entireties.The disclosure relates to organometallic compounds useful for the deposition of high purity tin oxide and to the purification of such organometallic compounds.The semiconductor industry is producing more and more components having smaller and smaller feature sizes. The production of such semiconductor devices reveals new design and manufacturing challenges which must be addressed in order to maintain or improve semiconductor device performance. The production of semiconductor wiring stacks with high density, high yield, good ...

PROCESS FOR THE PREPARATION OF HALIDE PEROVSKITE AND PEROVSKITE-RELATED MATERIALS

This invention is related to a method for the preparation of halide perovskite or perovskite-related materials on a substrate and to optoelectronic devices and photovoltaic cells comprising the perovskites prepared by the methods of this invention The method for the preparation of the perovskite includes a direct conversion of elemental metal or metal alloy to halide perovskite or perovskite-related materials. 1. A method for the preparation of halide perovskite or perovskite-related material of formula ABX;wherein:A is at least one monovalent or divalent organic cation, inorganic cation or combination thereof;X is at least one halide anion, a pseudohalide anion or combination thereof;u is between 1-10;v is between 1-10;w is between 3-30;B is at least one metal cation wherein, when combined with A and X, forms a perovskite or perovskite-related material;wherein the inorganic cation of A is different from the metal cation of B; 'depositing a layer of metal or metal alloy of B on a substrate; and', 'wherein said method comprises{'sub': u', 'v', 'w, 'treating said layer of metal or metal alloy of B with a solution or vapor comprising A and X and applying an electrical bias; wherein said solution or vapor reacts with said metal or metal alloy of B to form a halide perovskite or perovskite-related material of formula ABXon said solid surface;'} 'depositing a layer of salt comprising A and X on a substrate; and', 'or'}{'sub': u', 'v', 'w, 'treating said layer of salt with a vapor of metal or metal alloy of B; wherein said metal or metal alloy of B reacts with said salt to form a halide perovskite or perovskite-related material of formula ABXon said solid surface.'}2. The method of claim 1 , wherein said method comprises:depositing a layer of metal or metal alloy of B on a substrate; and{'sub': u', 'v', 'w, 'treating said layer of metal or metal alloy of B with a solution or vapor comprising A and X and applying an electrical bias; wherein said solution or vapor reacts ...

ORGANIC-INORGANIC HYBRID PEROVSKITE COMPOUNDS

Photoactive materials comprising organic-inorganic hybrid halide perovskite compounds are provided. Photovoltaic cells and light-emitting devices incorporating the photoactive materials into their light-absorbing and light-emitting layers, respectively, are also provided. The halide perovskites have an amAMXperovskite crystal structure, wherein am is an alkyl diamine cation, an aromatic diamine cation, an aromatic azole cation, a cyclic alkyl diamine cation or a hydrazinediium cation; A is a monovalent alkylammonium cation or an alkali metal cation; X is a halide ion or a combination of halide ions; and M is an octahedrally coordinated bivalent metal atom. 1. Discrete single-crystals of a halide perovskite having a three-dimensional amAMXperovskite crystal structure , wherein am is an alkyl diamine cation , an aromatic diamine cation , an aromatic azole cation , a cyclic alkyl diamine cation or a hydrazinediium cation; A is a monovalent alkylammonium cation or an alkali metal cation , X is a halide ion , and M is an octahedrally coordinated bivalent metal atom.2. The single-crystals of claim 1 , wherein A comprises a monovalent alkylammonium cation.3. The single-crystals of claim 2 , wherein A is methylammonium.4. The single-crystals of claim 2 , wherein A is formamidinium.5. The single-crystals of claim 4 , wherein M is tin.6. The single-crystals of claim 5 , wherein am comprises ethylene diammonium.7. The single-crystals of claim 2 , wherein M is tin.8. The single-crystals of claim 1 , wherein am comprises ethylene diammonium.9. The single-crystals of claim 8 , wherein A comprises a monovalent alkylammonium cation.10. The single-crystals of claim 9 , wherein M comprises tin or lead.11. The single-crystals of claim 1 , wherein halide perovskite having a three-dimensional enMASnIperovskite crystal structure.12. The single-crystals of claim 1 , wherein halide perovskite having a three-dimensional enFASnIperovskite crystal structure.13. The single-crystals of claim 1 ...

HIGH-PURITY LARGE-SCALE PREPARATION OF STANNSOPORFIN

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions. 132-. (canceled)33. A composition comprising stannsoporfin , wherein the stannsoporfin is at least about 97% pure , and wherein any individual impurity is present in an amount less than about 0.08%.34. The composition of claim 33 , wherein the stannsoporfin is at least about 98.5% pure.35. The composition of claim 33 , wherein the composition comprises palladium in an amount of less than about 20 ppm.36. The composition of claim 33 , wherein the composition comprises palladium in an amount of less than about 10 ppm.37. The composition of claim 33 , wherein any impurity present is present in an amount of about 0.07% or less.38. The composition of claim 33 , wherein the composition has a pH of about 7.0 to about 8.0.39. The composition of claim 33 , wherein the composition has a pH of about 7.2 to about 7.9.40. The composition of claim 33 , comprising at least about 10 grams of stannsoporfin.41. The composition of claim 33 , comprising at least about 100 grams of stannsoporfin.42. The composition of claim 33 , comprising at least about 10 grams of stannsoporfin claim 33 , wherein the composition contains palladium in an amount of less than about 20 ppm.43. The composition of claim 42 , wherein the stannsoporfin is a single-batch preparation of stannsoporfin.44. The composition of claim 33 , wherein the composition further comprises at least one impurity in an amount between about 0.05% and about 0.08% claim 33 , the at least one impurity having a relative retention time of 0.72-0.73 in an HPLC analysis.45. A pharmaceutical composition comprising stannsoporfin and a pharmaceutically acceptable carrier claim 33 , wherein the stannsoporfin is at least about 97% pure claim 33 , and wherein any individual impurity is present in an amount less than about 0.08%.46. The pharmaceutical composition of claim 45 , wherein the stannsoporfin is ...

P-TYPE ORGANIC SEMICONDUCTOR, COMPOSITION, PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSOR

Provided are a p-type organic semiconductor represented by Chemical Formula (1), which has improved thermal resistance and may detect near-infrared light, and a photoelectric conversion film, a photoelectric conversion device, and an image sensor including the same: 2. The p-type organic semiconductor of claim 1 , wherein Rand Rof Chemical Formula (1) are independently a substituted or unsubstituted C3 to C20 branched alkyl group.3. The p-type organic semiconductor of claim 1 , wherein Rto Rof Chemical Formula (1) are independently a hydrogen atom claim 1 , a deuterium atom claim 1 , a substituted or unsubstituted C1 to C10 alkyl group claim 1 , a substituted or unsubstituted C6 to C20 aryl group claim 1 , a substituted or unsubstituted C1 to C10 alkoxy group claim 1 , a substituted or unsubstituted C1 to C10 alkylthio group claim 1 , a substituted or unsubstituted C6 to C10 aryloxy group claim 1 , a substituted or unsubstituted C6 to C10 arylthio group claim 1 , an oxy group substituted with a substituted or unsubstituted C4 to C10 heterocyclic group claim 1 , a thio group substituted with a substituted or unsubstituted C4 to C10 heterocyclic group claim 1 , or a substituted or unsubstituted C1 to C10 amino group.4. The p-type organic semiconductor of claim 1 , wherein Rto Rof Chemical Formula (1) are independently a hydrogen atom or a deuterium atom.6. The p-type organic semiconductor of claim 5 , wherein Rto Rare independently a hydrogen atom claim 5 , a deuterium atom claim 5 , a substituted or unsubstituted C1 to C10 alkyl group claim 5 , a substituted or unsubstituted C6 to C20 aryl group claim 5 , a substituted or unsubstituted C1 to C10 alkoxy group claim 5 , a substituted or unsubstituted C1 to C10 alkylthio group claim 5 , a substituted or unsubstituted C6 to C10 aryloxy group claim 5 , a substituted or unsubstituted C6 to C10 arylthio group claim 5 , an oxy group substituted with a substituted or unsubstituted C4 to C10 heterocyclic group claim 5 , a thio ...

ORGANOMETALLIC COMPOUNDS AND PURIFICATION OF SUCH ORGANOMETALLIC COMPOUNDS

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R—Sn-A,

TIN COMPOUND, TIN PRECURSOR COMPOUND FOR FORMING A TIN-CONTAINING LAYER, AND METHODS OF FORMING A THIN LAYER USING THE SAME

A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1: 2. The tin compound as claimed in claim 1 , wherein:{'sub': 1', '7, 'Rand Rare the same, and'}{'sub': 1', '7, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, or isobutyl.'}3. The tin compound as claimed in claim 1 , wherein:{'sub': 2', '6, 'Rand Rare the same, and'}{'sub': 2', '6, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, or isobutyl.'}4. The tin compound as claimed in claim 1 , wherein:{'sub': 3', '5, 'Rand Rare the same, and'}{'sub': 3', '5, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, or isobutyl.'}5. The tin compound as claimed in claim 1 , wherein:{'sub': 2', '3, 'Rand Rare the same, and'}{'sub': 2', '3, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, or isobutyl.'}6. The tin compound as claimed in claim 1 , wherein:{'sub': 5', '6, 'Rand Rare the same, and'}{'sub': 5', '6, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, and isobutyl.'}7. The tin compound as claimed in claim 1 , wherein:{'sub': 2', '3', '5', '6, 'R, R, R, and Rare the same, and'}{'sub': 2', '3', '5', '6, 'R, R, R, and Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, and isobutyl.'}8. (canceled)10. The tin precursor compound as claimed in claim 9 , wherein:{'sub': 1', '7, 'Rand Rare the same, and'}{'sub': 1', '7, 'Rand Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, or isobutyl.'}11. The tin precursor compound as claimed in claim 9 , wherein:{'sub': 2', '3', '5', '6, 'at least two of R, R, R, and Rare the same, and'}{'sub': 2', '3', '5', '6, 'the at least two of R, R, R, and Rare hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, s-butyl, t-butyl, and isobutyl.'}12. The tin precursor ...

ARYLOXY-PHTHALOCYANINES OF GROUP IV METALS

The present disclosure relates to a compound comprising an aryloxy-phthalocyanine compound of group IV metals, a method for preparing said compound and an article of manufacture made therefrom. 127-. (canceled)29. The planar donor-acceptor heterojunction of claim 28 , wherein n ranges from about 0 to 4.30. The planar donor-acceptor heterojunction of claim 28 , wherein the substituted aryl containing group has 7 carbon atoms.31. The planar donor-acceptor heterojunction of claim 28 , wherein Rdoes not comprise a metal.32. The planar donor-acceptor heterojunction of claim 28 , wherein Rdoes not comprise a heteroatom as a bridging group.33. The planar donor-acceptor heterojunction of claim 28 , wherein Rfurther comprises a heteroatom claim 28 , wherein the heteroatom is a halogen selected from a group consisting essentially of fluorine claim 28 , chlorine claim 28 , bromine claim 28 , iodine claim 28 , and a combination thereof.34. The planar donor-acceptor heterojunction of claim 28 , wherein n is 1 claim 28 , and Ris a 3-methyl aryl containing group.35. The planar donor-acceptor heterojunction of claim 28 , wherein n is 1 claim 28 , and Ris substituted at one or more ortho positions with a methyl group claim 28 , ethyl group or propyl group.36. The planar donor-acceptor heterojunction of claim 28 , wherein the photoactive region is disposed on a substrate.37. The planar donor-acceptor heterojunction of claim 36 , wherein the substrate is comprised in a photovoltaic cell.38. A photovoltaic cell comprising a planar donor-acceptor heterojunction comprising a compound having the general molecular structure as claimed in .40. The planar donor-acceptor heterojunction of claim 39 , wherein n ranges from about 0 to 4.41. The planar donor-acceptor heterojunction of claim 39 , wherein the substituted aryloxy containing group has 7 carbon atoms.42. The planar donor-acceptor heterojunction of claim 39 , wherein Rand Rdoes not comprise a metal.43. The planar donor-acceptor ...

METHODS FOR SYNTHESIZING METAL MESOPORPHYRINS

Embodiments describe methods of synthesizing metal mesoporphyrin compounds. In embodiments, a metal mesoporphyrin compound may be formed by hemin transmetallation and subsequent hydrogenation of the tin protoporphyrin IX to form a metal mesoporphyrin. In other embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a protoporphyrin methyl ester from hemin and converting the protoporphyrin methyl ester intermediate to a metal mesoporphyrin compound through metal insertion and hydrogenation. In other embodiments, a metal mesoporphyrin compound may be formed from hemin by a hydrogen-free hydrogenation method to form a mesoporphyrin IX intermediate followed by metal insertion and hydrogenation. In embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX dihydrochloride intermediate compound and converting the mesoporphyrin IX intermediate to a metal mesoporphyrin compound through metal insertion. In embodiments, a metal mesoporphyrin compound may be formed directly from hemin without isolation of any intermediates. 1. A method of synthesizing a metal mesoporphyrin compound comprising:hydrogenating hemin to form a mesoporphyrin IX dihydrochloride intermediate compound;isolating the mesoporphyrin IX dihydrochloride intermediate compound; andinserting a metal into the mesoporphyrin IX dihydrochloride intermediate.2. The method of claim 1 , wherein the metal may be selected from tin claim 1 , iron claim 1 , zinc claim 1 , chromium claim 1 , manganese claim 1 , copper claim 1 , nickel claim 1 , magnesium claim 1 , cobalt claim 1 , platinum claim 1 , gold claim 1 , silver claim 1 , arsenic claim 1 , antimony claim 1 , cadmium claim 1 , gallium claim 1 , germanium claim 1 , and palladium.3. The method of claim 2 , wherein the metal is tin.4. The method of claim 3 , wherein the tin is inserted using tin oxide claim 3 , tin chloride claim 3 , tin sulfate claim 3 , tin bromide claim 3 , tin oxalate ...

High-purity large-scale preparation of stannsoporfin

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions.

Visible/Near-Infrared Porphyrin-Tape/C60 Organic Photodetectors

Porphyrin compounds are provided. The compounds may further comprise a fused polycyclic aromatic hydrocarbon or a fused heterocyclic aromatic. Fused polycyclic aromatic hydrocarbon s and fused heterocyclic aromatics may extend and broaden absorption, and modify the solubility, crystallinity, and film-forming properties of the porphyrin compounds. Additionally, devices comprising porphyrin compounds are also provided. The porphyrin compounds may be used in a donor/acceptor configuration with compounds, such as C 60 .

MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″), where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption. 1. A composition comprising:{'sub': 3', '2', '3, 'a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and'}no more than 4 mole % dialkyltin compounds relative to the total tin amount,wherein R is a hydrocarbyl group with 1-31 carbon atoms, andwherein R′ is a hydrocarbyl group with 1-10 carbon atoms.2. The composition of wherein R is a branched alkyl ligand represented by RRRC— claim 1 , where Rand Rare independently an alkyl group with 1-10 carbon atoms claim 1 , and Ris hydrogen or an alkyl group with 1-10 carbon atoms.3. The composition of wherein R comprises methyl (CH—) claim 1 , ethyl (CHCH—) claim 1 , isopropyl (CHCHHC—) claim 1 , tert-butyl ((CH)C—) claim 1 , tert-amyl (CHCH(CH)C—) claim 1 , sec-butyl (CH(CHCH)CH—) claim 1 , neopentyl (CH)CCH—) claim 1 , cyclohexyl claim 1 , cyclopentyl claim 1 , cyclobutyl claim 1 , or cyclopropyl.4. The composition of wherein R′ comprises a methyl group claim 1 , ethyl group claim 1 , isopropyl group claim 1 , or t-butyl group.5. The composition of wherein R′ comprises a t- ...

MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″), where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption. 1. A method to form a monoalkyltin triamide compound , the method comprising ,{'sub': 2', '2', '2', '4, 'reacting an alkylating agent selected from the group consisting of RMgX, RZn, RZnNR′, or a combination thereof, with Sn(NR′)in a solution comprising an organic solvent,'}wherein R is a hydrocarbyl group with 1-31 carbon atoms,wherein X is a halogen, andwherein R′ is a hydrocarbyl group with 1-10 carbon atoms.2. The method of wherein the solution has a concentration between about 0.01 M and about 5 M in tin.3. The method of wherein the organic solvent comprises an alkane claim 1 , an aromatic hydrocarbon claim 1 , an ether claim 1 , or mixtures thereof.4. The method of wherein the solution has a concentration of alkylating agent from about ±25% relative to a stoichiometric reaction of the tin reagent and the alkylating agent.5. The method of wherein the reaction is performed under an inert atmosphere with gradual addition of the alkylating agent with shading from ambient lighting.6. The method of wherein the alkylating agent is added gradually over a time period of 10 minutes to 90 minutes.7. The method of wherein the ...

ORGANOMETALLIC COMPOUNDS AND METHODS FOR THE DEPOSITION OF HIGH PURITY TIN OXIDE

Disclosed herein are compounds useful for the deposition of high purity tin oxide. Also disclose are methods for the deposition of tin oxide films using such compounds. Such films demonstrate high conformality, high etch selectivity and are optically transparent. Such compounds are those of the Formula as follows R—Sn-A 2. The organometallic compound of claim 1 , wherein A is selected from the group consisting of an (NR′) group and a saturated 3- to 7-membered N-containing heterocyclic group.3. The organometallic compound of claim 2 , wherein A is an (NR′) group.4. The organometallic compound of claim 2 , wherein A is a saturated 3- to 7-membered N-containing heterocyclic group.5. The organometallic compound of claim 4 , wherein A is a pyrrolidinyl group.6. The organometallic compound of claim 1 , wherein Ais (NEtMe).7. The organometallic compound of claim 1 , wherein each R and R′ group is an independently selected alkyl group having from 1 to 10 carbon atoms.8. The organometallic compound of claim 7 , wherein each R and R′ group is an independently selected alkyl group having from 1 to 6 carbon atoms.9. The organometallic compound of claim 8 , wherein each R and R′ group is an independently selected alkyl group having from 1 to 4 carbon atoms.10. The organometallic compound of claim 1 , wherein each R and R′ is independently selected from the group consisting of methyl claim 1 , ethyl claim 1 , propyl claim 1 , iso-propyl claim 1 , tert-butyl claim 1 , iso-butyl and n-butyl.11. The organometallic compound of claim 1 , wherein R and R′ represent different alkyl groups.12. The organometallic compound of claim 1 , wherein the compound of Formula I is selected from the group consisting of MeSn(NEtMe) claim 1 , t-BuSn(NEtMe) claim 1 , i-PrSn(NEtMe) claim 1 , n-PrSn(NEtMe) claim 1 , EtSn(NEtMe) claim 1 , i-BuSn(NEtMe) claim 1 , EtSn(NEtMe) claim 1 , MeSn(NEtMe) claim 1 , Sn(NEtMe) claim 1 , BuSn(NEtMe) claim 1 , Sn(Pyrrolidinyl)and BuSn(Pyrrolidinyl).13. The ...

Visibly Transparent, Near-Infrared-Absorbing Photovoltaic Devices

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials. 1. A visibly transparent photovoltaic device comprising:a visibly transparent substrate;a first visibly transparent electrode coupled to the visibly transparent substrate;a second visibly transparent electrode above the first visibly transparent electrode;a first visibly transparent active layer between the first visibly transparent electrode and the second visibly transparent electrode, wherein the first visibly transparent active layer comprises a phthalocyanine-based material, wherein the phthalocyanine-based material is a photoactive compound and exhibits a first maximum near-infrared absorption strength and a first maximum visible absorption strength, wherein the first maximum near-infrared absorption strength is greater than the first maximum visible absorption strength; anda second visibly transparent active layer between the first visibly transparent electrode and the second visibly transparent electrode and exhibiting a second maximum absorption strength in the near-infrared or ultraviolet and a second maximum visible absorption strength, wherein the second maximum absorption strength is greater than the second maximum visible absorption strength.2. The visibly transparent photovoltaic device of claim 1 , wherein the second visibly transparent photoactive layer comprises a second phthalocyanine-based material.3. The visibly transparent photovoltaic device of claim 1 , wherein the second visibly transparent photoactive layer comprises a naphthalenetetracarboxylic diimide.4. The visibly transparent photovoltaic device of claim 1 , wherein the phthalocyanine-based material functions as an electron acceptor material claim 1 , and ...

MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′)or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′)and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″), where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption. 1. A method for forming monoalkyl triamido tin , the method comprising ,{'sub': 2', '3, 'reacting a monoalkyltin triamide compound represented by the chemical formula RSn(NR′)with an amide (R″CONHR″′) in an organic solvent, wherein R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′, R″ and R″′ are independently a hydrocarbyl with 1-8 carbon atoms; and'}{'sub': '3', 'collecting a solid product represented by the formula RSn(NR″′COR″).'}2. The method of wherein the monoalkyl tin triamide is at an initial concentration from about 0.1M to about 8M and wherein the solvent is an alkane claim 1 , an aromatic hydrocarbon claim 1 , or an ether.3. The method of wherein the amide is added gradually over a period of at least about 2 minutes.4. The method of wherein the solid product is crystalline and has no more than about 1 mole percent relative to tin of contaminants of dialkyltin compounds.5. The method of wherein the monoalkyl triamido tin compound is selectively formed with no more than 1 mole percent polyalkyl tin contamination.6. The method of wherein the monoalkyltin triamide compound has a dialkyl tin ...

Meervoudig gesubstitueerd cyclopentadieen.

Polysubstituted cyclopentadiene

Polysubstituted cyclopentadiene compound which comprises at least one substituent of the form -(ER2)pD(R')nH, where E is an atom chosen from group (14) of the Periodic System of the Elements, D is a hetero atom chosen from group (15 or 16) of the Periodic System of the Elements, R and R' are substituents, n is the number of R' groups bonded to D and p = 1-4, characterized in that at least one other substituent is a branched alkyl group with at least 3 carbon atoms, 1 t-butyl group being excluded as sole other substituent.

ORGANIC ELECTROLUMINESCENT ELEMENT

To provide an organic electroluminescent device having high efficiency and high driving stability while having a low driving voltage. The organic electroluminescent device has one or more light-emitting layers between an anode and a cathode opposed to each other, wherein at least one of the light-emitting layers is a light-emitting layer composed of a vapor deposition layer containing a first host, a second host and a light-emitting dopant material; the first host is selected from oligopyridine compounds represented by the general formula (1); and the second host is selected from carbazole compounds having two or more carbazole rings, indolocarbazole compounds having an indolocarbazole ring or compounds having a carbazole ring and an indolocarbazole ring. 111-. (canceled)16. The organic electroluminescent device according to claim 12 , wherein a proportion of the first host is larger than 20 wt % and less than 55 wt % based on the first host and the second host in total.17. The organic electroluminescent device according to claim 12 , wherein the light-emitting dopant material is an organic metal complex containing at least one metal selected from the group consisting of ruthenium claim 12 , rhodium claim 12 , palladium claim 12 , silver claim 12 , rhenium claim 12 , osmium claim 12 , iridium claim 12 , platinum and gold.18. The organic electroluminescent device according to claim 12 , wherein the light-emitting dopant material is a thermally activated delayed fluorescence-emitting dopant material.19. The organic electroluminescent device according to claim 12 , wherein a hole blocking layer is provided adjacent to the light-emitting layer claim 12 , and the compound represented by the general formula (1) is contained in the hole blocking layer.20. A method for producing the organic electroluminescent device according to claim 12 , comprising a step of mixing a first host and a second host to prepare a premixture claim 12 , and then vapor-depositing a host material ...

Metal complexes with a tridentate ligand as polymerisation catalysts

The invention concerns novel compounds having the elements of group 11, 12 or 14 and a tridentate ligand, a method for preparing them and their use in particular as polymerisation catalyst.

Tin containing elastomers and products having reduced hysteresis properties

An anionic polymerization initiator comprising the reaction product of a an organatin halide and lithium in a suitable solvent. Elastomeric polymers prepared with these initiators have tin containing functional groups on substantially every polymer chain and provide vulcanizable rubber compounds exhibiting reduced hysteresis. Articles such as tires, produced with low hysteresis elastomeric polymers have lower rolling resistance. Methods are also provided for preparing the initiators and the elastomers having reduced hysteresis properties.

Single-source metalloorganic precursors to produce ii/vi materials

The present invention relates a precursor metal organic compound of the formula: (R.sub.3 --Si).sub.3 --Y--Q--M--A (I) wherein M is selected from the Group IIb elements of zinc, cadmium, or mercury; A is selected from amide, alkyl having from 1 to 10 carbon atoms, aryl, substituted aryl, or --Q'--Y'--(Si--R' 3 ) 3 L 2 wherein L is selected from nothing or a Lewis base ligand, Q and Q' are each independently selected from Group VIa elements of sulfur, selenium, or tellurium; and Y and Y' are each independently selected from carbon, silicon, germanum and tin, and R and R' are each independently selected from alkyl having from 1 to 10 carbon atoms, aryl or substituted aryl. In a preferred embodiment, A is --Q'--Y'--(Si--R' 3 )L 2 where L is nothing or a Lewis base ligand, especially wherein Q═Q', Y═Y' and R═R'. Methods of producing these compounds are also disclosed. These precursor materials provide in a single compound the binary, tertiary or quaternary metals in a ratio to each other that is controllable by judicious choise of metal atoms and organic substituents. The metal alloys are useful in a variety of electronic applications, particularly in semiconductors.

Catalysts preparation thereof and preparation of N-substituted acrylamides therewith

This invention is directed to novel catalysts characterized as compounds of tin or zinc containing a direct metal-nitrogen bond. The novel catalysts are derived from a primary or secondary amine such as an alkyl amine, a heterocyclic amine, an aromatic amine, etc. The amine is reacted with a tin compound such as a tin chloride, a tin bromide, a tin oxide, or a tin alkoxide. Alternatively, the amine may be reacted with a zinc halide, a zinc alkoxide or an organozinc compound. In another aspect of the present invention, the novel catalysts are used to catalyze the reaction of an acrylate or methacrylate ester with an amine in order to prepare N-substituted acrylamides or methacrylamides in good yield and with high selectivity.

Single-source metalloorganic precursors to produce ii/vi materials

The present invention relates to a precursor metal organic compound of the formula (I): (R3-Si)3-Y-Q-M-A wherein M is selected from the group IIb elements of zinc, cadmium, or mercury; A is selected from amide, alkyl having from 1 to 20 carbon atoms, aryl, substituted aryl, or -Q'-Y'-(Si-R'3)3L2 wherein L is selected from nothing or a Lewis base ligand, Q and Q' are each independently selected from Group VIa elements of sulfur, selenium, or tellurium; and Y and Y' are each independently selected from carbon, silicon, germanum and tin, and R and R' are each independently selected from alkyl having from 1 to 20 carbon atoms, aryl or substituted aryl. In a preferred embodiment, A is -Q'-Y'-(Si-R'3)L2 where L is nothing or a Lewis base ligand, especially wherein Q=Q', Y=Y' and R=R'. Methods of producing these compounds are also disclosed. These precursor materials provide in a single compound the binary, tertiary or quaternary metals in a ratio to each other that is controllable by judicious choice of metal atoms and organic substituents. The metal alloys are useful in a variety of electronic applications, particularly in semiconductors.

Complex compound of metals with tridentate ligand as polymerization catalysts

FIELD: polymerization catalysts. SUBSTANCE: invention provides complex compounds having general formula I (presented in description), in which M denotes tin or zinc atom; A and B independently denote carbon chain containing 2-4 carbon atoms; L 1 , L 2 and L 3 independently denote group of formula E 15 (R 15 )- wherein E 15 is nitrogen atom and R 15 hydrogen atom, alkyl, or radical of formula RR′R″E 14 - wherein E 14 is carbon or silicon atom and R, R', R" independently denote hydrogen atom or alkyl radical. Invention also describes (i) method for preparation of compounds I as well as method of preparing random copolymers or blockcopolymers or polymers using compound I as polymerization catalysts and chain- growth initiators, and (ii) polymers or copolymers prepared according to invention. EFFECT: extended choice of polymerization catalysts. 7 cl, 2 dwg, 2 tbl, 10 ex убу6гс ПЧ сэ (19) РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ ВИ” 2197 494 ' (51) МПК? 13) С2 С 07Е 3/06, 7/22, С 08 Е 4/16, С 08 С 63/08 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 2000102898/04, 06.07.1998 (24) Дата начала действия патента: 06.07.1998 (30) Приоритет: 08.07.1997 ЕР 97401621.4 (46) Дата публикации: 21.01.2003 (56) Ссылки: ЗИ 1002297 А, 07.03.1983. ЗЦ 955677 А, 15.06.1983. 4$ 5344948 А, 06.09.1994. (85) Дата перевода заявки РСТ на национальную фазу: 08.02.2000 (86) Заявка РСТ: ЕК 98/01433 (06.07.1998) (87) Публикация РСТ: М/О 99/02536 (21.01.1999) (98) Адрес для переписки: 129010, Москва, ул. Б. Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры", пат.пов. Е.В. Томской, рег.№ 0106 (71) Заявитель: СОСЬЕТЕ ДЕ КОНСЕЙ ДЕ РЕШЕРШ Э Д'АППЛИКАСЬОН СЪЕНТИФИК (ЕК), САНТР НАСЬОНАЛЬ ДЕ ЛЯ РЕШЕРШ СЬЕНТИФИК (ЕК) (72) Изобретатель: БЕРТРАН Ги (ЕКВ), КАЗО Жан-Бернар (ЕК), ФОР Жан-Люк (ЕВ) ‚ НГУЙЕН Ханх (ЕВ), РО Режи (ЕК) (73) Патентообладатель: СОСЬЕТЕ ДЕ КОНСЕЙ ДЕ РЕШЕРШ Э Д'АППЛИКАСЬОН СЪЕНТИФИК (ЕК), САНТР НАСЬОНАЛЬ ДЕ ЛЯ РЕШЕРШ СЬЕНТИФИК ( ...

Organic metal composite, catalyst composition and preparation method for polylactide resin

본 발명은 보다 향상된 물성을 나타내는 폴리락타이드 수지를 전환율 높게 제조할 수 있게 하는 유기 금속복합체, 촉매 조성물 및 이들을 사용한 폴리락타이드 수지의 제조 방법에 관한 것이다. The present invention relates to an organometallic composite, a catalyst composition, and a method for producing a polylactide resin using the same, which enables the production of polylactide resins exhibiting improved physical properties with high conversion. 상기 유기 금속복합체는 특정 카보디이미드 화합물과 금속 화합물의 복합체로 될 수 있다. The organometallic complex may be a complex of a specific carbodiimide compound and a metal compound. 유기 금속복합체, 촉매 조성물, 폴리락타이드 수지, 개환 중합 Organometallic complex, catalyst composition, polylactide resin, ring-opening polymerization

Process for the production of distannans

Complex catalyst, preparation method thereof and application thereof in preparation of polycarbonate

本发明公开了一种由式1表示的络合物催化剂及其制备方法和在制备聚碳酸酯中的应用。根据本发明的催化剂具有制备简单、催化活性高、催化剂用量小，等特征；发明所述的聚碳酸酯的制备方法简单易行，所得聚碳酸酯具有高聚合度，窄分子量分布等特点。

Metal complexes with a tridentate ligand as polymerization catalysts

The invention concerns novel compounds having the elements of group 11, 12 or 14; and a tridentate ligand, a method for preparing them and their use in particular as polymerisation catalyst.

Tin compound, method of synthesizing the same, tin precursor compound for ald, and method of forming tin-containing material film

【課題】 スズ化合物、その合成方法、ＡＬＤ用スズ前駆体化合物、及びスズ含有物質膜の形成方法を提供する。【解決手段】 スズ化合物、その合成方法、ＡＬＤ用スズ前駆体化合物、及びスズ含有物質膜の形成方法であり、下記化学式Ｉのスズ化合物を提供する：【化１１】化学式Ｉにおいて、Ｒ１、Ｒ２、Ｑ１、Ｑ２、Ｑ３及びＱ４は、それぞれ独立して、Ｃ１−Ｃ４の直線状または分枝状のアルキル基である。【選択図】図１

Materials for organic electroluminescent devices

Die vorliegende Erfindung betrifft Verbindungen mit einer Teilstruktur gemäß der Formel (1) und deren Verwendung in organischen Elektrolumineszenzvorrichtungen sowie organische Elektrolumineszenzvorrichtungen, welche derartige Verbindungen enthalten. The present invention relates to compounds having a partial structure according to the formula (1) and their use in organic electroluminescent devices, and to organic electroluminescent devices containing such compounds.

metal complexes

Die vorliegende Erfindung betrifft Metallkomplexe sowie elektronische Vorrichtungen, insbesondere organische Elektrolumineszenzvorrichtungen, enthaltend diese Metallkomplexe.

A novel compound, a raw material for forming a thin film containing the compound, and a method for manufacturing a thin film

하기 식 (1) 로 나타내는 화합물을 함유하는 박막 형성용 원료. (식 (1) 중, R 1 ∼ R 5 는, 각각 독립적으로, 수소 원자, 탄소 원자수 1 ∼ 5 의 알킬기 또는 불소 원자를 함유하는 기를 나타내고, M 은, 금속 원자를 나타내고, n 은, M 으로 나타내는 금속 원자의 가수를 나타낸다. 단, R 2 , R 3 및 R 4 중 적어도 하나는, 불소 원자를 함유하는 기를 나타낸다.)

Method of fighting insects and ticks

Optoelectronic device

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X]3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

The method for preparing halide perovskite and perovskite associated materials

本发明涉及用于在基材上制备卤化物钙钛矿或钙钛矿相关材料的方法，并涉及包含通过本发明方法制备的钙钛矿的光电器件和光伏电池。用于制备钙钛矿的方法包括将元素金属或金属合金直接转化为卤化物钙钛矿或钙钛矿相关材料。

Optoelectronic devices with organometal perovskites with mixed anions

본 발명은 혼합 음이온 페로브스카이트(mixed-anion perovskite)를 포함하는 광전자 장치를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드(halide) 음이온 및 칼코게나이드(chalcogenide) 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다. 본 발명은 또한 하기 화학식 (Ⅰ)의 혼합 할라이드 페로브스카이트를 제공한다: [A][B][X] 3 (Ⅰ), 상기 화학식 (Ⅰ) 중, [A]는 적어도 1종의 유기 양이온이고; [B]는 적어도 1종의 2가 금속 양이온이고; [X]는 상기 2종 이상의 서로 상이한 할라이드 음이온이다. 다른 측면에서, 본 발명은 광전자 장치에서 감광제(sensitizer)로서의 혼합 음이온 페로브스카이트의 용도를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드 음이온 및 칼코게나이드 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다. 본 발명은 또한 혼합 음이온 페로브스카이트를 포함하는 광전자 장치용 감광 재료(photosensitizing material)를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드 음이온 및 칼코게나이드 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다.

Tin compound, tin precursor compound for forming a tin-containing layer, and methods of forming a thin layer using the same

본 발명에 따른 주석 화합물은 화학식1로 표시되고, 주석 함유막의 형성을 위한 주석 전구체 화합물로 이용된다. [화학식1] R1, R2, R3, R4, R5, R6, 및 R7의 각각은 수소, 탄소수 1 내지 4의 선형 알킬기, 또는 탄소수 1 내지 4의 분지형 알킬기이다.

Thermolatent catalyst and its use in curable compositions

Предлагаются оловосодержащие катализаторы, содержащие соединение формулы I, где: L1, L2, L3 и L4, каждый, является независимо выбранным из -O-, -S-, -OC(=O)-, -OC(=S)-, -SC(=O)-, -SC(=S)-, -OS(=O)2O-, -OS(=O)2-, -N(R6)- и -OP(=O)(R6)-, где R6 является водородом или одновалентной алифатической, аралифатической, циклоалифатической или ароматической группой, имеющей вплоть до 20 атомов углерода, которая может необязательно содержать один или более гетероатомов, выбранных из группы, состоящей из кислорода, серы и азота; R1, R2, R3, R1’, R2’ и R3’, каждый, независимо, является двухвалентной алифатической, аралифатической, циклоалифатической или ароматической группой, имеющей вплоть до 20 атомов углерода, которая может необязательно содержать один или более гетероатомов, выбранных из группы, состоящей из кислорода, серы и азота; и R4, R5, R4’ и R5’, каждый, независимо является водородом или одновалентным остатком, образованным реакцией соответствующей N-H группы с изоцианатом, этиленненасыщенным соединением, лактоном, дилактоном, тиолактоном, лактамом, тиолактамом, карбоновой кислотой или ее производным или эпоксидом. Также предлагаются отверждаемые композиции, содержащие эти катализаторы, способ регулирования скорости отверждения отверждаемых композиций и покрытие на подложке. Технический результат - увеличенный период жизнеспособности композиции, увеличенная скорость реакции после нанесения без негативного влияния на период жизнеспособности. 4 н. и 14 з.п. ф-лы, 2 табл., 3 пр. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 742 236 C1 (51) МПК B01J 31/22 (2006.01) C08G 18/24 (2006.01) C07F 7/22 (2006.01) B01J 23/14 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК B01J 31/22 (2020.08); B01J 23/14 (2020.08); C08G 18/24 (2020.08); C07F 7/2224 (2020.08); C07F 7/2284 (2020.08) (21)(22) Заявка: 2020112456, 31.08.2018 31.08.2018 Дата регистрации: 03.02.2021 07.09.2017 US 15/698,037 (56) Список документов, цитированных в ...

Silafluorene metalloporphyrin- benzene organic semiconductor material and preparing method and uses thereof

提供了一种硅芴金属卟啉-苯有机半导体材料及其制备方法和应用。硅芴金属卟啉-苯有机半导体材料的结构由结构式（I）定义；其中：n为1到100之间的整数，R 1 、R 2 、R 3 、R 4 为H、C 1 -C 32 的烷基、苯基、含有一个或多个C 1 -C 32 的烷基苯或烷氧基苯；M为金属离子。所述硅芴金属卟啉-苯有机半导体材料的溶解性能好、载流子迁移率高、吸光度强、对光吸收范围宽，提高了其对太阳光的利用率。此外，制备方法的工艺简单，易于操作和控制。

Process for the organotin compound

내용 없음. No content.

Preparation of triorganotin lithium compositions, the compositions and their use as initiators

INSECTICIDE AND ACARICIDE PRODUCTS

Fluorous reaction and separation systems

The present invention provides several methods of synthesis and separation i n which organic/fluorous phase separation techniques are used to effect separations. The present invention also provides novel compositions of matter comprising fluorous Si, Sn and Ge compounds.

Patent FR2313943B1

Alkylation of nitrogen-contg. heterocycles - by formation of a trialkyl tin deriv. and reaction with an organic halide

N-Substd. aromatic nitrogen heterocycles (I) apart from tetrazoles, are prepd. by the reaction of equimolar quantities of an organostannyl azole (II) with a prim. or sec. halide (III) R'X. (where N i is an azole or purine having >=2N atoms, one of which has a labile H atom, this molecule opt. contg. other cycles or chains selected from aryl, and (un)satd. alkyl; R = alkyl; R'X = a prim. or sec. halide). Depending upon the nature of NH and R', the prods. are bactericides, fungicides, cholinesterase inhibitors, germicides, and sedatives. Better yields of prod. and a cheaper process to carry out than known methods. A typical prod. is 1-(N-pyrazolyl)-2-butene. This was prepd. from 18g N-tributyl stannyl pyrazole and 4.6g 1-chloro-2-butene which were refluxed together at 80 degrees C for 20 hrs. The yield was 5.7g b.pt. 80-82 degrees C/25mm Hg.

AGENTS WITH BACTERICIDE AND FUNGICIDE EFFECTS

Silafluorene metalloporphyrin- benzene organic semiconductor material and preparing method and uses thereof

提供了一种硅芴金属卟啉-苯有机半导体材料及其制备方法和应用。硅芴金属卟啉-苯有机半导体材料的结构由结构式（I）定义；其中：n为1到100之间的整数，R 1 、R 2 、R 3 、R 4 为H、C 1 -C 32 的烷基、苯基、含有一个或多个C 1 -C 32 的烷基苯或烷氧基苯；M为金属离子。所述硅芴金属卟啉-苯有机半导体材料的溶解性能好、载流子迁移率高、吸光度强、对光吸收范围宽，提高了其对太阳光的利用率。此外，制备方法的工艺简单，易于操作和控制。

Patent FR2150907A1

CRYSTALLIZED SOLID ITQ-75 AND METHOD FOR PREPARING IT

La présente invention a pour objet un solide cristallisé comprenant une composition chimique exprimée sur une base anhydre, en termes de moles, définie par la formule générale suivante : SnaMbS8-xSex : cR où R représente au moins un composé organique azoté ;M représente au moins un métal choisi dans le groupe VIII, IB ou IIB ;« a » est la quantité molaire du Sn compris entre 0,1 et 8 ;« b » est la quantité molaire du métal M compris entre 0,05 et 8 ;« c » est la quantité molaire du composé organique azoté R compris entre 0 et 4 ;« x » est la quantité molaire du Se compris entre 0 et 4. The subject of the present invention is a crystalline solid comprising a chemical composition expressed on an anhydrous basis, in terms of moles, defined by the following general formula: SnaMbS8-xSex: cR where R represents at least one nitrogenous organic compound; M represents at least a metal selected from Group VIII, IB or IIB; "a" is the molar amount of Sn between 0.1 and 8; "b" is the molar amount of metal M between 0.05 and 8; "c" is the molar amount of organic nitrogen compound R in the range of 0 to 4; "x" is the molar amount of Se in the range of 0 to 4.

Manufacture of covalent inorganic isocyanates and their derivatives

Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR')3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR'2)3 and no more than 4 mole% dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R' is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn-(NR'COR")3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R' and R" are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

Silylimidazolium salt complex

Novel organotin compounds

Novel organotin-substituted cyclic sulfone compounds of the general formula:

Tri-higher alkyl tin azide and its use

Disclosed are a compound of the formula (R)3SnN3, wherein R is a C7-18 alkyl, and a process for producing a tetrazolylbenzene compound which comprises reacting a cyanobenzene compound with a (R)3SnN3. This process is useful for a safe and commercially profitable production of the tetrazolylbenzene compound which is employed for producing a tetrazole derivative having a hypotensive action based on angiotensin II-antagonizing activity or a production intermediate thereof.

A kind of 2- carbonyl -2- phenylacetic acid p-nitrophenyl formyl hydrazone two (2,4- dichloro benzyl) tin complex and its preparation method and application

本发明公开了一种2‑羰基‑2‑苯基乙酸对硝基苯甲酰腙二(2,4‑二氯苄基)锡配合物，为如下结构式(I)的配合物 ，其中Ph为苯基，R为2,4‑二氯苄基。本发明还公开了该2‑羰基‑2‑苯基乙酸对硝基苯甲酰腙二(2,4‑二氯苄基)锡配合物的制备方法和在制备抗癌药物中的应用。

Novel compound, thin-film forming raw material that contains said compound, and method of manufacturing thin film

Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R 1 to R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R 2 , R 3 , and R 4 represents the group containing a fluorine atom.

Vapor source using a precursor tertiary amine solution

High-purity large-scale preparation of stannsoporfin

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions.

Optoelectronic devices with organometal perovskites with mixed anions

본 발명은 혼합 음이온 페로브스카이트(mixed-anion perovskite)를 포함하는 광전자 장치를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드(halide) 음이온 및 칼코게나이드(chalcogenide) 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다. 본 발명은 또한 하기 화학식 (Ⅰ)의 혼합 할라이드 페로브스카이트를 제공한다: [A][B][X] 3 (Ⅰ), 상기 화학식 (Ⅰ) 중, [A]는 적어도 1종의 유기 양이온이고; [B]는 적어도 1종의 2가 금속 양이온이고; [X]는 상기 2종 이상의 서로 상이한 할라이드 음이온이다. 다른 측면에서, 본 발명은 광전자 장치에서 감광제(sensitizer)로서의 혼합 음이온 페로브스카이트의 용도를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드 음이온 및 칼코게나이드 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다. 본 발명은 또한 혼합 음이온 페로브스카이트를 포함하는 광전자 장치용 감광 재료(photosensitizing material)를 제공하며, 여기서 상기 혼합 음이온 페로브스카이트는 할라이드 음이온 및 칼코게나이드 음이온으로부터 선택된 2종 이상의 서로 상이한 음이온을 포함한다. The present invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite is at least two selected from a halide anion and a chalcogenide anion. contain different anions. The present invention also provides a mixed halide perovskite of formula (I): [A][B][X] 3 (I), wherein [A] is at least one organic is a cation; [B] is at least one divalent metal cation; [X] is the above two or more different halide anions. In another aspect, the present invention provides the use of a mixed anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed anion perovskite comprises at least two different anions selected from a halide anion and a chalcogenide anion. includes The present invention also provides a photosensitizing material for an optoelectronic device comprising a mixed anion perovskite, wherein the mixed anion perovskite comprises at least two different anions selected from a halide anion and a chalcogenide anion. include

Heat sink catalyst and use thereof in curable compositions

本发明提供包括式I的化合物的含锡催化剂。L1、L2、L3和L4各自独立地选自‑O‑、‑S‑、‑OC(＝O)‑、‑OC(＝S)‑、‑SC(＝O)‑、‑SC(＝S)‑、‑OS(＝O) 2 O‑、‑OS(＝O) 2 ‑‑N(R6)‑和‑OP(＝O)(R6)‑，其中R6表示氢或具有至多20个碳原子的单价脂族、芳脂族、脂环族或芳香族基团。R1、R2、R3、R1'、R2'和R3'各自独立地表示具有至多20个碳原子的二价脂族、芳脂族、脂环族或芳香族基团；且R4、R5、R4'和R5'各自独立地表示氢或源自各个N‑H基团与异氰酸酯、烯键式不饱和化合物、内酯、双内酯、硫代内酯、内酰胺、硫代内酰胺、羧酸或其衍生物或环氧化物反应的单价残基。本发明还提供含有这些催化剂的可固化组合物和控制可固化组合物的固化速率的方法。

Compositions comprising stannsoporfin

本发明涉及包含锡泊芬的组合物。本申请公开了一种包含高纯度锡泊芬的大规模(批量)组合物以及合成这样的组合物的方法。

Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods

一種純組合物，其包含由化學式RSn(OR’) 3 所表示的單烷基錫三烷氧化物、或由化學式RSn(NR’ 2 ) 3 所表示的單烷基錫三胺化合物，以及基於錫總含量計，不大於4莫耳%的二烷基錫化合物，其中R係具有1至31個碳原子的烴基，以及其中R’係具有1至10個碳原子的烴基。提供形成純組合物的方法。亦提供一種固體組合物，其包含由RSn-(NR'COR") 3 所表示的單烷基三醯胺基錫化合物，其中R係具有1至31個碳原子的烴基，以及其中R’及R"係各自獨立為具有1至10個碳原子的烴基。該等組合物適合用於形成適用於EUV圖案化的光阻劑組合物，其中該等組合物具有高EUV吸收。

Tin (II) cluster compound and preparation method and application thereof

本发明提供一种锡(II)簇化合物及其制备方法和应用。锡(II)簇化合物合成步骤：在氮气保护下将三甲基硅基苯(基)氨基锂用乙醚溶解,在丙酮浴条件下加入二甲氨基腈,反应过夜得到PhNC(NMe 2 )NSiMe 3 (Li)的乙醚溶液；然后将PhNC(NMe 2 )NSiMe 3 (Li)的乙醚溶液在丙酮浴条件下加入到SnCl 2 的乙醚悬浮液中,慢慢升至室温，反应过夜；静置，过滤，滤液在真空下浓缩，室温下结晶，析出无色晶体，即得锡(II)簇化合物；三甲基硅基苯(基)氨基锂、二甲氨基腈和SnCl 2 的摩尔比为1:1:1。本发明化合物可作为催化剂用于催化苯胺和N,N'‑二异丙基碳化二亚胺加成生成胍的反应，有较好的应用前景。

AIR-ACTIVATED ORGANO CINNAMENTS FOR POLYURETHANE SYNTHESIS

Silylimidazolium salt complexes

本发明涉及甲硅烷基咪唑盐络合物以及它们作为包括固化环氧树脂的可调的潜催化剂的催化剂的用途。

Tin containing elastomers and products having reduced hysteresis properties

An anionic polymerization initiator comprising the reaction product of a an organotin halide and lithium in a suitable solvent. Elastomeric polymers prepared with these initiators have tin containing functional groups on substantially every polymer chain and provide vulcanizable rubber compounds exhibiting reduced hysteresis. Articles such as tires, produced with low hysteresis elastomeric polymers have lower rolling resistance. Methods are also provided for preparing the initiators and the elastomers having reduced hysteresis properties.

Fungicidal and microbiocidal compositions and methods

1319889 Pesticidal application of oragnotin azolides BAYER AG 18 Nov 1971 [18 Nov 1970 30 June 1971] 53614/71 Heading A5E [Also in Division C2] A fungicidal or microbiocidal composition or process utilizes as active ingredient a trisubstituted organo-tin azolide of the general formula: in which R, R', R" are alkyl with 1-6 carbon atoms or aryl which may be substituted by halogen atoms and/or nitro groups, A, D are carbon atoms, or AX, DX' are nitrogen atoms B is a CH group or nitrogen, X, X', X" are hydrogen, alkyl with 1 to 6 carbon atoms, alkenyl with 1 to 3 carbon atoms or alkynyl with 1 to 3 carbon atoms; or X' and X" are a (CH) 4 group and form a fused benzene ring.

Patent CH620573A5

A kind of di-n-butyl tin complex and its preparation method and application

本发明公开了一种2‑羰基‑3‑苯基丙酸对甲基苯甲酰腙二正丁基锡配合物，为如下结构式(I)的配合物 ，其中Ph为苯基，R为正丁基。本发明还公开了该2‑羰基‑3‑苯基丙酸对甲基苯甲酰腙二正丁基锡配合物的制备方法和在制备抗癌药物中的应用。

Air-activated organotin catalysts for polyurethane synthesis

This invention relates to an organotin-based catalyst system for polyurethane synthesis that is useful in coatings applications. The catalyst has low activity in the absence of oxygen. When a coating mixture comprising the catalyst is sprayed and/or applied to a substrate as a thin film in air, the catalyst is activated. For solvent-based refinish systems comprising hydroxyl and isocyanate species at high solids levels, the catalyst system therefore provides extended viscosity stability, i.e., pot life.

2-carbonyl butyric acid benzoyl hydrazone dibenzyl tin complex, preparation method therefor and applications

本发明公开了一种2-羰基丁酸苯甲酰腙二苯基锡配合物，为如下结构式(I)的配合物 ，其中Ph为苯基。本发明还公开了该2-羰基丁酸苯甲酰腙二苯基锡配合物的制备方法和在制备抗癌药物中的应用。

High-purity large-scale preparation of stannsoporfin

Vapor source using solutions of precursors in tertiary amines

본 발명은 화학 증착 또는 원자층 증착에 사용되는 금속 전구체의 3차 아민 용액에 관한 것이다. 3차 아민 용액은 다수의 장점을 갖는다. 이는 고농도의 비극성 전구체를 이들과 반응하는 일 없이 용해시킨다. 이는 불순물, 예컨대 산소 또는 할로겐을 생성하고자 하는 물질에 공급하지 않거나 이를 에칭 또는 부식시키지 않는다. 기화율은 용질 및 용매가 동시에 증발되고, 높은 인화점을 갖고, 낮은 인화성을 가질 수 있도록 선택될 수 있다. 신속한 증발을 용이하게 하는 소형 액적을 형성하여 용해된 금속 전구체가 분해되는 일 없이 화학 증착 또는 원자층 증착 공정에 증기를 공급할 수 있다. 3차 아민 중 용액은 매우 낮은 융점을 가져서, 이들은 운송, 사용, 또는 저장 동안 분해되지 않는다. 3차 아민은 낮은 독성을 가지고 생분해성이다. 이들은 재생가능한 공급원으로부터 대량으로 이용가능하며 비용도 저렴하다. The present invention relates to tertiary amine solutions of metal precursors used in chemical vapor deposition or atomic layer deposition. Tertiary amine solutions have a number of advantages. It dissolves high concentrations of non-polar precursors without reacting with them. It does not feed into, etch or corrode the material intended to generate impurities such as oxygen or halogen. The vaporization rate may be selected such that the solute and solvent evaporate simultaneously, have a high flash point, and have a low flammability. A vapor can be supplied to a chemical vapor deposition or atomic layer deposition process without decomposition of the dissolved metal precursor by forming small droplets that facilitate rapid evaporation. Solutions in tertiary amines have very low melting points, so they do not decompose during transportation, use, or storage. Tertiary amines have low toxicity and are biodegradable. They are available in large quantities from renewable sources and are inexpensive.

Precursor for preparing the SnS thin-film and manufacturing method thereof

본 발명은 하기 화학식 1 내지 화학식 3 중 어느 하나 이상의 구조를 포함하는 전구체 및 이를 이용한 황화주석 박막의 제조방법에 관한 것이다. [화학식 1] 화학식 1에서, R 1 내지 R 4 는 독립적으로 수소 또는 탄소수 1 내지 4의 알킬기이다. [화학식 2] 화학식 2에서, R 5 내지 R 9 는 독립적으로 수소 또는 탄소수 1 내지 4의 알킬기이다. 화학식 3의 구조를 포함하는 황화주석 박막 형성용 전구체; [화학식 3] 화학식 3에서, R 10 내지 R 12 는 독립적으로 수소 또는 탄소수 1 내지 4의 알킬기이고, n은 1 내지 4의 정수이다. The present invention relates to a precursor comprising a structure of any one of the following formulas (1) to (3), and a process for producing a tin sulfide thin film using the precursor. [Chemical Formula 1] In Formula (1), R 1 to R 4 are independently hydrogen or an alkyl group having 1 to 4 carbon atoms. (2) In the general formula (2), R 5 to R 9 independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms. A precursor for forming a thin film of tin sulfide containing the structure of Formula 3; (3) In the general formula (3), R 10 to R 12 are independently hydrogen or an alkyl group having 1 to 4 carbon atoms, and n is an integer of 1 to 4.

Process for the preparation of alkyl carbanils which are substituted on the nitrogen by alkyl tin groups

Thermolatent catalyst and its use in curable compositions

Tin-containing catalysts are provided comprising a compound of formula I. L1, L2, L3, and L4 are each independently selected from -O-, -S-, -OC(=O)-, -OC(=S)-, -SC(=O)-, -SC(=S)-, -OS(=O)2O-, -OS(=O)2- -N(R6)-, and -OP(=O)(R6)-, wherein R6 represents hydrogen or a monovalent aliphatic, araliphatic, cycloaliphatic or aromatic group having up to 20 carbon atoms. R1, R2, R3, R1', R2', and R3' each independently represent a divalent aliphatic, araliphatic, cycloaliphatic or aromatic group having up to 20 carbon atoms; and R4, R5, R4', and R5' each independently represent hydrogen or a monovalent residue derived from reaction of a respective N-H group with an isocyanate, an ethylenically unsaturated compound, a lactone, a dilactone, a thiolactone, a lactam, a thiolactam, a carboxylic acid or derivative thereof, or an epoxide. Also provided are curable compositions containing these catalysts and methods of controlling the rate of cure of curable compositions.