ГИДРОКСИАРИЛФУНКЦИОНАЛИЗОВАННЫЕ ПОЛИМЕРЫ

Изобретение относится к способу получения полимера, включающему по меньшей мере одно функционализующее звено и один или несколько типов полиеновых мономерных фрагментов. Указанный способ включает а) получение раствора, содержащего (1) один или более типов этиленненасыщенных мономеров, включающих по меньшей мере один тип полиена, и (2) инициирующее соединение, и b) обеспечение анионного инициирования для получения карбанионного полимера, имеющего среднечисленную молекулярную массу в диапазоне от 75000 до 150000 Да. Указанное инициирующее соединение описывается общей формулой RZQ-М, где М представляет собой атом щелочного металла, Rпредставляет собой замещенную или незамещенную арильную группу, содержащую по меньшей мере одну группу OR, где каждый Rпредставляет собой группу, которая является нереакционно-способной по отношению к М и способной гидролизоваться, Z представляет собой одинарную связь или замещенную или незамещенную циклическую алкиленовую, ациклическую алкиленовую или ариленовую ...

СОДЕРЖАЩИЙ ГИДРОКСИЛЬНЫЕ ГРУППЫ МЕТИЛСТИРОЛ И ПОЛИМЕРЫ НА ЕГО ОСНОВЕ

Изобретение относится к эластомерным композициям, содержащим один или более армирующих наполнителей. Описан способ получения соединения полимера, содержащего мономерное звено полиена, включающий а) анионное инициирование полимеризации по меньшей мере одного типа полиена и соединения, имеющего общую формулугде m означает целое число от 2 до 5, и каждая группа Gнезависимым образом является защитной группой, причем указанный, по меньшей мере, один тип полиена полимеризуют до полимеризации указанного соединения, и где число звеньев, получаемых из указанного соединения, равно от 1 до 10, с получением, таким образом, полимера, и b) одно из тушения полимера, реакции полимера с соединением, обрывающим рост цепи, или полимеризации дополнительных количеств указанного по меньшей мере одного типа полиена. Технический результат: улучшение параметров сцепления с дорогой и сопротивление качению. 11 з.п. ф-лы, 7 табл.

САМОЗАТУХАЮЩАЯ ПОЛИМЕРНАЯ КОМПОЗИЦИЯ

Настоящее изобретение относится к стабилизированным самозатухающим винилароматическим полимерным композициям. Описана самозатухающая полимерная композиция, содержащая: a) стабилизирующую полимерную композицию, содержащую: i. от 1 до 100 мас.%, по меньшей мере, сополимера, содержащего в качестве основного звена мономерные звенья, по меньшей мере, типа винилароматического мономера, а также содержащего мономерные звенья, по меньшей мере, типа винилового мономера, который содержит эпоксидные группы, где концентрация оксиранового кислорода, рассчитанная по отношению ко всему сополимеру (i), находится в интервале от 158 до 3940 м.д. по массе, ii. от 0 до 99 мас.% одного или более винилароматических полимеров, совместимых друг с другом, b) от 1,0 м.ч. до 8,7 м.ч., относительно компонента (а), по меньшей мере, галогенированного замедляющего горение агента. Также описаны вспениваемые шарики, компактные изделия, полимерные пены, вспененные изделия. Технический результат: получена композиция с повышенной ...

СПОСОБ ПОЛУЧЕНИЯ АМИНОМЕТИЛИРОВАННЫХ БИСЕРНЫХ ПОЛИМЕРИЗАТОВ

Настоящее изобретение относится к способу получения аминометилированных бисерных полимеризатов. Указанный способ включает следующие стадии: а) превращение в бисерный полимеризат мономерных капелек из смеси, содержащей по меньшей мере одно моновинилароматическое соединение, по меньшей мере одно поливинилароматическое соединение и по меньшей мере один инициатор; b) взаимодействие полученного бисерного полимеризата по меньшей мере с одним соединением формулы (I)где R1обозначает алкил с 1-3 атомами углерода или водород, и по меньшей мере с одним соединением формулы (II)в которой n равно от 2 до 100, в присутствии по меньшей мере одного алифатического насыщенного галогенангидрида карбоновой кислоты и в присутствии алифатических насыщенных карбоновых кислот и по меньшей мере одного катализатора Фриделя-Крафтса; с) гидролиз полученного фталимидометилированного бисерного полимеризата до аминометилированного бисерного полимеризата. Указанный способ позволяет получать аминометилированные бисерные ...

СПОСОБ ПОЛУЧЕНИЯ АМИНОМЕТИЛИРОВАННЫХ БИСЕРНЫХ ПОЛИМЕРИЗАТОВ

СПОСОБ ПОЛУЧЕНИЯ АМИНОМЕТИЛИРОВАННЫХ БИСЕРНЫХ ПОЛИМЕРОВ ИЗ СЛОЖНЫХ N-МЕТИЛФТАЛИМИДОВЫХ-ЭФИРОВ КАРБОНОВЫХ КИСЛОТ

ГИДРОКСИАРИЛФУНКЦИОНАЛИЗОВАННЫЕ ПОЛИМЕРЫ

... 1. Способ получения полимера, который включает по меньшей мере одно функционализующее звено и один или несколько типов полиеновых мономерных фрагментов, при этом упомянутый способ включает:a) получение раствора, который содержит(1) один или более типов этиленненасыщенных мономеров, которые включают, по меньшей мере, один тип полиена, и(2) инициирующее соединение, которое описывается общей формулой RZQ-M, где М представляет собой атом щелочного металла, Rпредставляет собой замещенную или незамещенную арильную группу, содержащую по меньшей мере один заместитель OR, где каждый Rпредставляет собой группу, которая является нереакционно-способной по отношению к М и способной гидролизоваться, Z представляет собой одинарную связь или замещенную или незамещенную циклическую алкиленовую, ациклическую алкиленовую или ариленовую группу, a Q представляет собой группу, связанную с М через атом С, N или Sn; иb) обеспечение анионного инициирования упомянутым инициирующим соединением полимеризации упомянутых ...

Способ получения серосодержащих сорбентов

Изобретение относится к способу получения серусодержащего сорбента и может быть использовано для извлечения меди, свинца, серебра, ртути в гидрометаллургии и химической технологии. Изобретение позволяет получить селективный к ионам свинца сорбент и упростить процесс получения за счет взаимодействия хлорметилированного сополимера стирола с дивинилбензолом с (амидинотио)уксусной кислотой при нагревании. 1 табл.

Strahlungsempfindliche Kunststoffzusammensetzung

IMPROVED BROMINE STYRENE POLYMERS WITH CONTROLLED MOLECULE WEIGHT

POSITIVELY PHOTO-SENSITIVE ONE ISOLATIONS RESIN COMPOSITION AND HARDENED PRODUCT OF IT

NANO-PARTICLE OUT FUNKTIONALISIERTEM VINYLPOLYMER

CONTACT LENS MATERIAL

INHIBITORS OF INORGANIC DEPOSITS, IN PARTICULAR WITH OIL DRILLINGS, IN PARTICULAR UNDER HIGH PRESSURE AND HIGH TEMPERATURE

MULTILEVEL ELECTRICAL SOLITARY COMPOSITION

HYDROPHILIC CROSS LINKAGE MATERIALS ABSTENTION CONTACT LENS

(CO) POLYMERS ON BASIS OF VINYL UNITS AND YOUR USE IN ELEKTROLUMINESZIERENDEN ARRANGEMENTS

Use of film-forming polymers and organic hollow particles for coating agents

The present invention relates to the use of a mixture made of film-forming polymers and organic hollow particles for coating agents, particularly in coating compositions, and to coating agents comprising such blends.

FLAME RETARDANT BROMINATED STYRENE-BASED LATICES

Thermally stable hydrophobically associating rheological control additives for water-based drilling fluids

SPHERICAL POROUS CROSS-LINKED COPOLYMERS OF CHLOROMETHYLSTYRENE AND DIVINYLBENZENE AND DERIVATIVE THEREOF

PHOSPHORUS-CONTAINING COPOLYMERS, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF

Disclosed are copolymers which are obtained by radically copolymerizing a vinylic poly(alkylene oxide) compound (A) with an ethylenically unsaturated monomer compound (B). Also disclosed is the use of said copolymers as a dispersing agent for aqueous solid suspensions, especially hydraulic binders based on cement, lime, gypsum, and anhydrite. The inventive copolymers barely delay the hardening process of the concrete and ensure long processability of the concrete while providing a very good water reducing power.

FREE-RADICAL ADDITION COPOLYMERS OF META- OR PARA- ISOPROPENYL-.alpha.,.alpha.-DIMETHYLBENZYLISOCYANATE

PROCESS FOR PREPARING CHLOROMETHYLATED POLYSTYRENE - DIVINYLBENZENE COPOLYMER

COMPOUNDS WITH ELECTRON DONOR AND ELECTRON ACCEPTOR FUNCTIONALITY

... ▓▓ Compounds containing both electron donor and electron acceptor▓functionality are suitable for use in adhesives. The electron donor group is a▓carbon to carbon double bond attached to an aromatic ring and conjugated▓with the unsaturation in the ring. The electron acceptor group is a maleimide,▓acrylate, fumarate or maleate.▓ ...

CATIONIC COPOLYMERIZATION OF META- OR PARA- ISOPROPENYL-.alpha.,.alpha.-DIMEXTHYLBENZYLISOCYANATE

CO2 ABATING LATEX COATING COMPOSITION

The present invention relates to a composition, an aqueous dispersion of polymer particles functionalized with acetoacetoxyethyl groups and a CO2 abating additive, an ion exchange resin functionalized with amine groups or quaternary ammonium salt groups or a combination thereof. The composition is useful for CO2 abatement in acetoacetoxy functionalized latexes compositions.

POLYMERIC ACID CATALYSTS AND USES THEREOF

Polymers useful as catalysts in non-enzymatic saccharification processes are provided. Provided are also methods for hydrolyzing cellulosic materials into monosaccharides and/or oligosaccharides using these polymeric acid catalysts.

Associative Monomers and Polymers

COPOLYMERIC AMINOPLAST CROSSLINKING AGENTS

NOVEL COPOLYMERIC AMINOPLAST CROSSLINKING AGENTS A copolymer of a TMI/amino compound 1:1 monoadduct with ethylenically unsaturated comonomers is provided, as well as a process for producing the same. Such copolymers in and of themselves may find use as aminoplast crosslinking agents, or can readily be modified thereto. Curable compositions can be formulated from the crosslinker alone or in combination with polyfunctional active hydrogen compounds, which can be cured to produce crosslinked films and objects.

FLAME RETARDANT BROMINATED STYRENE-BASED POLYMERS

Halogenated styrene-based polymers having surprisingly good physical properties in combination with flame retardancy include copolymers of ring-halogenated, ethylenically unsaturated aromatic monomers and aliphatic conjugated dienes having from 4 to 10 carbon atoms, and terpolymers of ring-halogenated, ethylenically unsaturated aromatic monomers, halogen-free aromatic monomers, and aliphatic conjugated dienes having from 4 to 10 carbon atoms.

STAR POLYMERS AND PROCESS FOR PRODUCING THE SAME

Star polymers are obtained by polymerising vinyl aromatic monomers with a branching monomer component which contains at least two vinyl aromatic functional radicals in the presence of a catalyst obtained from (A) a transition metal complex of the II to the VIII secondary group; (B) a cationforming agent; and (C) an optional aluminium compound.

[BIS (TRIGIDROKARBILSILIL) THE AMINOSILYL] - FUNCTIONALISED STYRENE AND METHOD FOR ITS PRODUCTION

[BIS - (TRIGIDROKARBILSILIL) THE AMINOSILYL] FUNCTIONALISED STYRENE AND METHOD FOR ITS PRODUCTION

ELASTOMERIC COPOLYMERS BASED ON [BIS (TRIGIDROKARBILSILIL) THE AMINOSILYL] - FUNCTIONALISED STYRENE AND THEIR APPLICATION IN PRODUCTION OF RUBBER

amfifilnaya macromolecule and its application

Organic antireflective coating polymer, antireflective paint composition contg. said polymer, and process for preparing same

Polymer, ion exchange membrane and structural enhanced membrane including the same

Anti-reflection coating polymer and preparing method thereof

Thermoplastic resin composition and optical films made therefrom

Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol

The invention provides an insulting layer which enables to improve device characteristics when used in an electronic device. A polymer insulator containing a repeating unit represented by the formula below is contained in the insulating layer. In the formula, R represents a direct bond or an arbitrary linking group; Ar represents an optionally substituted divalent aromatic group; and R represents a hydrogen atom, a fluorine atom or a monovalent organic group.

Copolymers of vinyl phenols and of composed of butadiene

NEW COPOLYMERS ACRYLIC AND PROCEEDED OF COATING BY ELECTRIC WAY IMPLEMENTING THEM AS MATTER OF COATING

MATERIALS OF FORMATION Of an IMAGE SENSITIVE HAS a BEAM OF HIGH ENERGY, PROCEEDED OF FORMATION AND ELEMENT OBTAINED

METHOD OF PREPARING PARTICLES SUITABLE FOR CATALYZING THE REDUCTION OF OXYGEN OR OXIDATION OF HYDROGEN PROTON CONDUCTIVE BY GRAFTING HAS THEIR SURFACE SPECIFIC PROTON CONDUCTIVE FLUOROPOLYMERS

Method of preparation of copolymers

Improvements with the preparation of a thermoplastic polymeric matter

NOUVEAUX COPOLYMERES ACRYLIQUES ET PROCEDE DE REVETEMENT PAR VOIE ELECTRIQUE LES METTANT EN OEUVRE A TITRE DE MATIERE DE REVETEMENT

COPOLYMERE. IL COMPREND DE 2 A 90 EN POIDS DE MOTIFS RECURRENTS DE FORMULEA: (CF DESSIN DANS BOPI) DANS LAQUELLE R ET R SONT L'HYDROGENE, OU DES RADICAUX HYDROCARBONES, ET ENVIRON DE 10 A 98 EN POIDS DE MOTIFS DE FORMULEB: (CF DESSIN DANS BOPI) DANS LAQUELLE R EST HYDROGENE, METHYLE, CARBOXYMETHYLE OU HALOGENE, R EST HYDROGENE, ALCOYLE, CYCLOALCOYLE, ARYLE, EVENTUELLEMENT ALCOXYLE OU HALOGENE, R EST L'HYDROGENE OU UN GROUPE -COOR, R ETANT L'HYDROGENE OU ALCOYLE. APPLICATION EN ELECTROPHORESE.

Manufacture of resins

New hydrosoluble copolymers obtained by polymerization of monomers useful e.g. for treating tumors

La présente invention concerne de nouveaux copolymères hydrosolubles, des compositions, en particulier pharmaceutiques, ou dispositifs les comprenant, leurs applications en thérapeutique, notamment en ophtalmologie, en virologie et en cancérologie. Elle a également trait à un procédé de préparation de ces copolymères.

COPOLYMER AND ITS USE AS A DETERGENT ADDITIVE FOR FUEL

L'invention concerne un copolymère et son utilisation comme additif détergent dans un carburant liquide de moteur à combustion interne. Le copolymère est obtenu par copolymérisation d'au moins : - un monomère apolaire (ma) répondant à la formule (I) : et - un monomère polaire (mb) choisi parmi les monomères dérivés du styrène ou de l'alphaméthylstyrène dont le noyau aromatique est substitué par au moins un groupement R ou par au moins une chaine hydrocarbonée en C1 à C12, linéaire ou ramifiée, de préférence acyclique, substituée par au moins un groupement R, ledit groupement R étant choisi parmi : - le groupement hydroxyle, - un groupement -OR', - un groupement -(OCyH2yO)f-H, - un groupement -(OCyH2yO)f-R', - un groupement -O-(CO)-R', et - un groupement -(CO)-OR', y est un entier allant de 2 à 8, f est un entier allant de 1 à 10 et R' est choisi parmi les chaines alkyles en C1 à C24. L'invention concerne également un procédé de maintien de la propreté et/ou de nettoyage d'au moins une des ...

NEW BASIC POLYMERS RETICLES

Aq. self-crosslinking partly neutralised resin, used in paints and varnishes esp. for vehicles,

Nouvelle résine aqueuse autoréticulable à base de monomères (méth)acryliques, caractérisée en ce que parmi ces monomères - un au moins est un monomère polymérisable Is, porteur d'une fonction isocyanate transitoirement bloquée par un groupe protecteur GP, - un au moins est l'acide acrylique ou l'acide méthacrylique, - un au moins est un (méth)acrylate d'hydroxy alcoyle en C1 -C10 , - un au moins est un (méth)acrylate d'alcoyle en C1 -C14 ou un (méth)acrylate de fluoroalcoyle en C1 -C4 et que ces résines sont partiellement neutralisées à l'aide d'une amine, procédé de préparation, utilisation d'une telle dans la préparation de vernis et/ou de peintures, vernis et/ou peintures obtenus.

Functionalised polyvinylaromatic nanoparticles

DIAPHRAGM FOR DIRECT LIQUID FUEL CELL AND METHOD FOR PRODUCING THE SAME

RESIN COMPOSITION CAPABLE OF IMPROVING ELECTRIC INSULATING PERFORMANCE AND RESISTANCE TO DEVELOPER, A POLYMER, A CURED MATERIAL, AND AN ELECTRONIC COMPONENT

PURPOSE: A resin composition is provided to be crosslinkable at low temperatures, to decrease the loss of a low molecular weight crosslinking agent and to form a cured film with excellent elongation. CONSTITUTION: A resin composition comprises a polymer which comprises a structure unit indicated in chemical formula a1, and a structure unit indicated in chemical formula a2, and a solvent. In chemical formula a1, each of R^1 is hydrogen or hydroxyl group, at least one of R^1 is a hydroxyl group, and R^2 is hydrogen or a C1-4 alkyl group. In chemical formula a2, each of R^3 is hydrogen or a group which has a cationically polymerizable group, at least one of R^3 is a group which has a cationically polymerizable group, and R^4 is a hydrogen or C1-4 alkyl group. COPYRIGHT KIPO 2013 ...

RESIST COMPOSITION AND PATTERNING PROCESS

CONDUCTIVE POLYMER, POLYMER COMPOSITION, FILM AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING SAME

Disclosed are a conductive polymer, a conductive polymer composition, a conductive polymer organic film, and an organic photoelectric device including the same.

Improvements in photographic materials and in polymers therefor

METHOD OF PREPARATION OF COPOLYMER OF POLYSTYRENE AND CHLOROMETHYL CHLOROFORMATE DIVINYLNEZENE

Block copolymer

The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

Electro-conductive polymer composite and substrate

An object of the present invention is to provide a conductive polymer composite which is excellent in film-forming property in spin coating and is capable of forming a conductive film having high transparency and good flatness when a film is formed. The conductive polymer composite includes: (A) a [pi]-conjugated polymer; and (B) a dopant polymer comprising a repeating unit a represented by chemical formula (1) and having the weight average molecular weight in a range of 1,000 to 500,000.

REDISPERSIBLE FUNCTIONAL PARTICLES

A novel class of layered microparticles comprises a thermoplastic or crosslinked polymeric core containing anionic functional corona groups bonded to the core particle surface, and an oxidatively polymerized shell such as a polypyrrole embedded in the corona. The particles are useful e.g. as conductor material or electrophoretic or colloidal dye; they may be dried and redispersed in polar solvents by conventional means without changing the particles' properties.

MONOFUNCTIONAL MONOMERS, RADICALLY POLYMERISABLE COMPOSITIONS CONTAINING THEM AND RESINS AND OPHTALMIC ARTICLES OBTAINED FROM THEM

The aim of the present invention is: radically polymerisable compositions which contain at least one monofunctional monomer with at least one difunctional monomer; resins which are obtainable by radical copolymerisation of said compositions; it being possible for the resins to be photochromic or not; articles, notably ophthalmic articles, which are constituted totally or in part of such resins; monofunctional monomers.

COPOLYMER

A copolymer containing 30 to 65 mol % of structural unit (I), 1 to 55 mol % of unit (II), and 10 to 60 mol % of unit (III), and having a number-average molecular weight of 500 to 200,000.

RESIN FOR POSITIVE RESIST COMPOSITION, AND POSITIVE RESIST COMPOSITION USING THE SAME, LAMINATE AND METHOD FOR FORMING RESIST PATTERN

The use of a positive resist resin comprising a resin having a specific structure has been found to improve the resolution and provide a resist pattern having a good shape and further to make a resist layer less prone to tailing or forming a recess when the resist layer is formed on a magnetic film or on an oxidation-resistant layer made of a metal formed on the magnetic layer.

STAR POLYMERS AND PROCESS FOR PRODUCING THE SAME

Star polymers are obtained by polymerising vinyl aromatic monomers with a branching monomer component which contains at least two vinyl aromatic functional radicals in the presence of a catalyst obtained from (A) a transition metal complex of the II to the VIII secondary group; (B) a cation-forming agent; and (C) an optional aluminium compound.

PROCESS FOR THE PREPARATION OF METHYL P-VINYLBENZOATE AND P-VINYL BENZOIC ACID, AND THEIR USE IN LATEX COMPOSITIONS

L'invention concerne un procédé de préparation directe de p-vinylbenzoate de méthyle, à partir de p-formylbenzoate de méthyle, à l'aide de cétène et en présence d'acétate de potassium. Les produits principaux que l'on obtient avec ce procédé possèdent un rapport d'environ cinq sur deux entre le p-vinylbenzoate de méthyle et l'acide p-carbométhoxycinnamique, ce dernier pouvant être décarboxylé de manière thermique, notamment en présence de poudre de cuivre, ce qui permet de produire des quantités supplémentaire de p-vinylbenzoate de méthyle. On peut ultérieurement faire subir une hydrolyse au p-vinylbenzoate de méthyle, afin de former un acide p-vinyle benzoïque. On peut polymériser à la fois le p-vinyle benzoate de méthyle et l'acide p-vinyle benzoïque, à l'aide de monomères à insaturation éthylénique, afin de former les compositions utiles de latex de l'invention.

COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION

A compound represented by the formula (I): wherein R1 represents a hydrogen atom etc., R2 and R3 each independently represent a hydrogen atom etc., R4 represents a C1-C8 divalent hydrocarbon group, R5 represents a single bond etc., and R6 represents an unsubstituted or substituted C6-C20 aromatic hydrocarbon group, a polymer comprising a structural unit derived from the compound represented by the formula (I) and a chemically amplified positive resist composition comprising the polymer, at least one acid generator and at least one solvent.

Polymers containing protected styrene and unprotected hydroxybenzyl (meth)acrylamides

Novel polymers may be used in resist formulations for the fabrication of printing plates and circuit boards and, in particular, for the fabrication of integrated circuits. No autocatalytic decomposition of the compounds occurs and the resist film obtained therewith has good adhesive properties.

Resin composition and pattern forming method using the same

A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.

Polymers, resist compositions and patterning process

A copolymer of an acrylate monomer containing fluorine at α-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

Hydroxyaryl Functionalized Polymers

Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers. 24-. (canceled)5. The compound of wherein Q is SnRwhere each Rindependently is a hydrocarbyl group or together claim 1 , with the Sn atom claim 1 , form a cyclic group.6. The compound of wherein Q is NRwhere Ris a hydrocarbyl group.7. (canceled)8. The compound of wherein said ORsubstituent groups are on adjacent ring C atoms of said aryl group.9. The compound of wherein said aryl group is a phenyl group.10. (canceled)11. The compound of wherein each Ris a t-butyldimethylsiloxyl group.1214-. (canceled) This is a division of U.S. application Ser. No. 14/523,903, which was filed 26 Oct. 2014 and issued as U.S. Pat. No. 10,227,425 on 12 Mar. 2019, which is a continuation of U.S. application Ser. No. 12/810,846, which had a 371(c) completion (filing) date of 7 Jul. 2010 and now issued as U.S. Pat. No. 8,871,871 on 28 Oct. 2014, which was a national stage entry of intl. appl. PCT/US2008/088384, filed 28 Dec. 2008, which claimed the benefit of each of U.S. provisional appl. nos. 61/017,278 filed 28 Dec. 2007, 61/127,586 filed 14 May 2008, 61/082,181 filed 18 Jul. 2008, and 61/110,107 filed 31 Oct. 2008.Traction performance is one of the primary evaluation criteria for tire treads, and performance on wet surfaces such as snow and ice is an important factor in that evaluation.Deformation of tread rubber induced by road surface asperities, rate of water drainage between the tread and road surface, and possible adhesive interactions at the interface between tread and road are some of the complex, interrelated factors that complicate the type of quantitative mechanistic understanding needed to ...

BLOCK COPOLYMER

The present application provides the block copolymers and their application. The present application may provide the block copolymers that have excellent self assembling and phase separation properties and therefore that can be effectively used in various applications. The present application may also provide applications of the block copolymers.

IN-CHAIN PHOSPHINE- AND PHOSPHONIUM- CONTAINING DIENE-POLYMERS

In-chain phosphine- and/or phosphonium-containing diene-polymers, the preparation and use thereof, as well as vulcanizable rubber compounds comprising such polymers, and their use for the production of moldings in particular in the production of tires.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.

SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION

In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring, m1b represents an integer of 1 to 5.

METHOD OF MAKING HYDROXYARYL-FUNCTIONALIZED INTERPOLYMER BY FREE RADICAL INITIATED POLYMERIZATION

CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND

Polymeric phosphorus-containing compositions and their use in hydrocyanation, unsaturated nitrile isomerization and hydroformylation reactions

A polymeric, phosphorus-containing composition made by heating, in the presence of an initiator, preferably a free radical initiator, and optionally in the presence of one or more comonomcrs, at least one substituted phosphonylatcd 2,2'-dihydroxyl-1,1'-binaphthalene or at least one substituted 2,2'-dihydroxyl-1,1'-biphenylene.

HYPERBRANCHED POLYMER AND PROCESS FOR PRODUCTION THEREOF

There is provided a novel hyperbranched polymer in which the refractive index is precisely controlled while retaining its hyperbranched structure, and a method for producing the hyperbranched polymer. Further, there is also provided an optically and thermally stable novel hyperbranched polymer in which the desired refractive index is precisely controlled, and a method for producing the hyperbranched polymer. The hyperbranched polymer has, as a branched structure, a repeating unit structure produced from two dithiocarbamate compounds each having a vinyl structure, at the polymerization initiation site having a vinyl structure. A specific example of the hyperbranched polymer can be produced by subjecting to a living radical polymerization N,N-diethyldithiocarbamylmethylstyrene in the presence of N,N-diethyldithiocarbamylethyl methacrylate.

NON-COVALENTLY CROSSLINKABLE MATERIALS FOR PHOTOLITHOGRAPHY PROCESSES

PROCESS FOR MANUFACTURING A COMPOSITE SORBENT MATERIAL FOR CHROMATOGRAPHICAL SEPARATION OF BIOPOLYMERS

Sulphonic acid monomer based compositions

ABA TRIBLOCK COPOLYMER AND PROCESS FOR PRODUCING THE SAME

Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene

A copolymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula wherein A, B, C, and D are independently H or C1 to C3 alkyl and wherein at least one of A, B, C and D is C1 to C3 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.

POSITIVE RESIST COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION AND RESIN USED IN THE COMPOSITION

PROBLEM TO BE SOLVED: To provide a positive resist composition which simultaneously satisfies high sensitivity, high resolution, a good pattern shape and good line edge roughness in an ultrafine area, particularly in electron beam, X-ray or EUV light lithography; a pattern-forming method using the same; and a resin used in the positive resist composition. SOLUTION: The positive resist composition includes a resin (P) having a repeating unit (A) having an ionic structural site and for decomposing upon irradiation with an actinic ray or radiation to generate an acid and a repeating unit (B) having at least one phenolic hydroxy group, a part or all of hydrogen atoms of the hydroxy group or groups each being protected by a group for leaving by the action of an acid, wherein the ionic structural site of the repeating unit (A) contained in the resin (P) is a structure for generating an acid anion in a side chain of the resin upon irradiation with an actinic ray or radiation. The pattern-forming ...

ГИДРОКСИАРИЛФУНКЦИОНАЛИЗОВАННЫЕ ПОЛИМЕРЫ

Изобретение относится к способу получения функционального полимера. Полимер содержит один или несколько типов полиеновых мономерных фрагментов и по меньшей мере одно функционализующее звено, которое содержит арильную группу, имеющую по меньшей мере одну непосредственно связанную группу OR, где R представляет собой гидролизуемую защитную группу. Способ включает: а) получение раствора, содержащего инициирующее соединение и этиленненасыщенные мономеры, которые содержат по меньшей мере один тип полиена, по меньшей мере один тип C-Свинилароматического соединения и этиленненасыщенное соединение, представленное формулой CH=CHR, где Rявляется арильной группой, имеющей по меньшей мере один заместитель OR, где R представляет собой гидролизуемую защитную группу; и b) обеспечение анионного инициирования упомянутым инициирующим соединением полимеризации упомянутых этиленненасыщенных мономеров для получения карбанионного полимера. По меньшей мере одно функционализующее звено получают из упомянутого мономера ...

КОМПОЗИЦИЯ ВСПЕНИВАЕМЫХ ВИНИЛАРОМАТИЧЕСКИХ ПОЛИМЕРОВ И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ

Изобретение относится к технологии получения гранулированных вспениваемых композиций на основе винилароматических соединений и может быть использовано при производстве изделий из пенопластов. Вспениваемая композиция включает полимерную матрицу, выбранную из сополимера, содержащего от 90 до 99,995 мас.%, по меньшей мере, одного винилароматического мономера и от 0,005 до 10 мас.% соли или C-Cалкилового эфира стиролсульфоновой кислоты; или полимерной смеси, включающей от 92 до 99,995 мас.% винилароматического (со)полимера и от 0,005 до 8 мас.% продукта, выбранного из соли или C-Cалкилового эфира стиролсульфоновой кислоты и сополимера стирола и соли или C-Cалкилового эфира стиролсульфоновой кислоты; от 1 до 10 мас.% в расчете на массу полимерной матрицы вспенивающей добавки, выбранной из алифатических или циклоалифатических углеводородов, содержащих от 3 до 6 атомов углерода, или их смесей, галогенированных производных алифатических углеводородов, содержащих от 1 до 3 атомов углерода, и диоксида ...

СПОСОБ ПОЛУЧЕНИЯ АМИНОМЕТИЛИРОВАННЫХ БИСЕРНЫХ ПОЛИМЕРОВ ИЗ СЛОЖНЫХ N-МЕТИЛФТАЛИМИДОВЫХ ЭФИРОВ КАРБОНОВЫХ КИСЛОТ

Изобретение относится к способу получения аминометилированных бисерных полимеров, которые могут быть использованы в качестве анионообменных смол или могут быть превращены в хелатные смолы. Способ получения аминометилированных бисерных полимеров заключается в том, что на первой стадии капельки мономеров из смеси, содержащей по меньшей мере одно моновинилароматическое соединение, по меньшей мере одно поливинилароматическое соединение, по меньшей мере один инициатор, подвергают взаимодействию. Далее полученный бисерный полимер подвергают взаимодействию со сложным N-метилфталимидовым эфиром карбоновой кислоты в присутствии алифатических, насыщенных или ненасыщенных ангидридов карбоновых кислот или карбоновых кислот, в присутствии по меньшей мере одного катализатора Фриделя-Крафтса. Эту стадию проводят в отсутствие 1,2-дихлорэтана. Полученный фталимидометилированный бисерный полимер гидролизуют до аминометилированного бисерного полимера. Количество сложного N-метилфталимидового эфира карбоновой ...

СОДЕРЖАЩИЙ ГИДРОКСИЛЬНЫЕ ГРУППЫ МЕТИЛСТИРОЛ И ПОЛИМЕРЫ НА ЕГО ОСНОВЕ

Composition for forming photosensitive resist underlayer film

A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.

Radiation-sensitive composition

A radiation-sensitive composition includes a polymer component, a radiation-sensitive acid generator and a solvent component. The polymer component includes a first polymer that includes an acidic group, a group in which an acidic group is protected by an acid-dissociable group, or a both thereof. The solvent component includes a first solvent which is a solvent shown by a general formula (C1-a), a solvent shown by a general formula (C1-b), a solvent shown by a general formula (C1-c), or a mixture thereof.

Conductive Polymer Dispersion for Improved Reliability

An improved capacitor is provided wherein the capacitor comprising an anode foil; and a conductive polymer layer on the anode foil. The conductive polymer layer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and the polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns. The second particles have an average particle diameter of at least 1 nm to no more than 600 nm.

RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER COMPOUND

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including a polymer compound (A1) which has a constitutional unit (a0) derived from a compound represented by Formula (a0-1) and a constitutional unit (a10) derived from a compound represented by Formula (a10-1) and does not have a constitutional unit represented by Formula (1). In the formulas, Raand Rarepresent a polymerizable group-containing group; Waand Warepresent an (n+1)-valent or (n+1)-valent aromatic hydrocarbon group; nand nrepresent an integer of 1 to 3; and Zrepresents Fe, Co, Ni, Cr, or Ru. 7. The resist composition according to claim 1 , wherein a proportion of the constitutional unit (a0) in the polymer compound (A1) is in a range of 5% to 95% by mole with respect to the total amount (100% by mole) of all constitutional units constituting the polymer compound (A1).8. The resist composition according to claim 1 , wherein a proportion of the constitutional unit (a10) in the polymer compound (A1) is in a range of 5% to 95% by mole with respect to the total amount (100% by mole) of all constitutional units constituting the polymer compound (A1).9. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film on a support using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern.16. The polymer compound according to claim 10 , wherein a proportion of the constitutional unit (a0) in the polymer compound is in a range of 5% to 95% by mole with respect to the total amount (100% by mole) of all constitutional units constituting the polymer compound.17. The polymer compound according to claim 10 , wherein a proportion of the constitutional unit (a10) in the polymer compound is in a range of 5% to 95% by mole with respect to the total amount (100% by mole) of all ...

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition includes: a resin, in which the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, and in which the resin includes: a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, and a repeating unit B which is a repeating unit having an acid-decomposable group, a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, and at least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring. 1. An actinic ray-sensitive or radiation-sensitive resin composition , comprising:a resin,wherein the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, andwherein the resin includes:a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, anda repeating unit B which is a repeating unit having an acid-decomposable group,a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, andat least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring.2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 5% by mole or more with respect to all the repeating units in the resin.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 10% by mole or more with respect to all the repeating units in the resin.4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the repeating unit A is a ...

Random Copolymer for Forming Neutral Layer, Laminate for Forming Pattern Including the Same, and Method for Forming Pattern Using the Same

The present invention provides a random copolymer including structural units represented by the following Chemical Formulae 1 to 3 2. The method of claim 1 , comprising:a) applying a random copolymer solution including the random copolymer on a substrate,b) subjecting the applied random copolymer solution to heat treatment to form a neutral layer,c) applying a block copolymer solution including a block copolymer on the neutral layer, andd) subjecting the applied block copolymer solution to the heat treatment to form a pattern.3. The method of claim 2 , wherein in step a) claim 2 , the random copolymer solution has a concentration of 0.1 to 5 wt %.4. The method of claim 2 , wherein in step b) claim 2 , the heat treatment is performed at 230 to 300° C.6. The method of claim 2 , wherein after the heat treatment in step d) claim 2 , the block copolymer is partially etched. This application is a division of U.S. patent application Ser. No. 16/106,444, filed Aug. 21, 2018, which claims priority to Korean Patent Application No. 10-2017-0105964 filed Aug. 22, 2017, the disclosures of each of which are hereby incorporated in their entirety by reference.The following disclosure relates to pattern formation technology by directed self-assembly, and more particularly, to a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.As a semiconductor device is miniaturized and integrated, the fineness of the circuit pattern is required. For this, a method of improving light exposure equipment, or improving a pattern formation method has been studied. Among them, in the case of improving light exposure equipment, initial investment costs occur, and the usage of the conventional equipment is lowered, and thus, studies on improvement of the method for forming a pattern have received attention.An improved method for forming a ...

POLYMER, ION EXCHANGE MEMBRANE AND STRUCTURAL ENHANCED MEMBRANE EMPLOYING THE SAME

A polymer, ion exchange membrane, and structural enhanced membrane employing the same are provided. The polymer includes a first repeating unit and a second repeating unit. In particular, the first repeating unit is 2. The polymer as claimed in claim 1 , wherein the ratio between the first repeating unit and the second repeating unit is from 1:99 to 99:1.3. The polymer as claimed in claim 1 , wherein Ris methyl claim 1 , ethyl claim 1 , propyl claim 1 , isopropyl claim 1 , butyl claim 1 , sec-butyl claim 1 , isobutyl claim 1 , tert-butyl claim 1 , pentyl claim 1 , sec-pentyl claim 1 , isopentyl claim 1 , neopentyl claim 1 , cyclopentyl claim 1 , hexyl claim 1 , sec-hexyl claim 1 , cyclohexyl claim 1 , heptyl claim 1 , sec-heptyl claim 1 , octyl claim 1 , sec-octyl claim 1 , nonyl claim 1 , decyl claim 1 , 1-ethylpentyl claim 1 , 2-ethylhexyl claim 1 , or 2-butylhexyl.8. An ion exchange membrane claim 1 , comprising a polymer or a cross-linking polymer claim 1 , wherein the polymer is the polymer as claimed in ; the cross-linking polymer is a reaction product of the polymer as claimed in and a cross-linking agent; and the cross-linking agent is a compound having at least two imide groups; and the ion exchange membrane has a thickness from 15 μm to 200 μm.9. The ion exchange membrane as claimed in claim 8 , wherein the imide group is maleimide group.12. A structural enhanced membrane claim 8 , comprising:{'claim-ref': [{'@idref': 'CLM-00001', 'claim 1'}, {'@idref': 'CLM-00001', 'claim 1'}], 'a polymer or a cross-linking polymer, wherein the polymer is the polymer as claimed in ; the cross-linking polymer is a reaction product of the polymer as claimed in and a cross-linking agent; and the cross-linking agent is a compound having at least two imide groups; and'}a substrate, wherein the substrate has a plurality of pores.13. The structural enhanced membrane as claimed in wherein the polymer or the cross-linking polymer is disposed on at least one surface of the ...

Room temperature polymer crosslinking using 1-functionalized benzocyclobutene

Specific benzocyclobutenes serve as intramolecular or intermolecular or both intramolecular or intermolecular crosslinkers. The benzocyclobutenes can be incorporated into polymers post polymerization or can be provided as monomers that participate in homopolymerization or copolymerization with other monomer to create the polymers having benzocyclobutenes that are exploited to carry out the crosslinking. At least some of the benzocyclobutenes taught herein can be used to carry out crosslinking a ambient temperatures.

IONIC POLYMERS AND USE THEREOF IN PROCESSING OF BIOMASS

Ionic polymers (IP) are made of anions and a polymeric backbone containing cations. The ionic polymers are incorporated in membranes or attached to solid supports and use of the ionic polymers in processing of biomass. 2. The ionic polymer of claim 1 , wherein R is substituted Caryl and the substituents are selected from the group comprising H claim 1 , —SOH.5. A solid support having at least one surface comprising one or more ionic polymers of .6. A polymer membrane incorporating one or more ionic polymers of .7. (canceled)8. (canceled)9. A method for producing one or more fine chemicals selected from the group comprising lipids claim 1 , sugars claim 1 , furanic compounds claim 1 , and/or humins from biomass claim 1 , the method comprising the steps of:a) providing biomass;b) optionally determining lipids and/or sugars contents in the biomass;c) optionally pretreating the biomass;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'd) contacting the biomass with a catalyst to form a reaction mixture, wherein the catalyst is an ionic polymer or a combination of ionic polymers of , a membrane incorporating the ionic polymers and/or a solid support having at least one surface comprising one or more of the ionic polymers;'}e) degrading the biomass in the reaction mixture to produce a liquid phase and a solid phase, wherein the liquid phase includes the one or more fine chemicals, and the solid phase includes residual biomass;f) isolating at least a portion of the liquid phase from the solid phase; andg) recovering the one or more fine chemicals from the isolated liquid phase.10. The method of claim 9 , wherein the step d) consists in adding an appropriate water or organic solvent and an effective amount of the catalyst to the biomass to form a reaction mixture claim 9 , and degrading step e) consists in heating the reaction mixture of step d) during appropriate time and subsequently cooling to room temperature.11. A method for producing C5 and C6 sugars claim 9 , ...

BLOCK COPOLYMER AND PREPARATION METHOD AND APPLICATION THEREOF

The present invention discloses a block copolymer comprising at least a block A and a block B, wherein the monomer of block A contains one or more of the structural units: 2. The block copolymer according to claim 1 , wherein the number of alkyl group in the hydrocarbyloxy group or the ester group is 0-20.5. The block copolymer according to claim 1 , wherein the block copolymer has a di-block structure of (A)-(B)or a tri-block structure of (B)-(A)-(B).6. The block copolymer according to claim 5 , wherein the block copolymer has a characteristic selected from the group consisting of:1) m/n=0.2-5;2) m/(n1+n2)=0.2-5.9. A preparation method of the block copolymer according to claim 1 , wherein the method comprises the following steps:S1, selecting a monomer of block A and a monomer of block B, wherein,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the monomer of block A and the monomer of block B are as described in ;'}{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'S2, polymerizing the monomer of block A to obtain block A, and polymerizing with monomer of block B in the presence of block A to obtain the block copolymer as described in .'}10. The preparation method of the block copolymer according to claim 9 , wherein the preparation method further includes a step of deprotecting the compound obtained by polymerizing block A with monomer of block B to obtain the block copolymer.11. An application of the block copolymer according to in manufacture of a DSA-guided self-assembling material claim 1 , a nanocatalyst claim 1 , a functionalized nanoelectronic device claim 1 , a nano energy storage device claim 1 , a portable precision storage material claim 1 , and/or a biomedical nanodevice. This application claims the priorities of Chinese patent application No. 201810863466.2 entitled “An ultrahigh resolution block copolymer containing fluorine and oxygen and preparation method and application thereof” filed on Aug. 1, 2018 and Chinese patent application No. ...

FLUOROPOLYMERS AND MEMBRANES COMPRISING FLUOROPOLYMERS (I)

Disclosed are a copolymer, porous membranes made from the copolymer, and a method of treating fluids using the porous membranes to remove metal ions, for example, from fluids originating in the microelectronics industry, wherein the copolymer includes polymerized monomeric units I and II, wherein monomeric unit I is of the formula A-X—CH—B, wherein A is Rf—(CH)n, Rf is a perfluoro alkyl group of the formula CF—(CF)—, wherein x is 3-12, n is 1-6, X is O or S, and B is vinylphenyl, the monomeric unit II is haloalkyl styrene, and optionally wherein the halo group of haloalkyl is replaced with an optional substituent, for example, ethylenediamine tetra acetic acid, iminodiacetic acid, or iminodisuccinic acid. 1. A copolymer comprising polymerized monomeric units I and II , wherein:{'sub': 2', '2', '3', '2', 'x, 'monomeric unit I is of the formula A-X—CH—B, wherein A is Rf—(CH)n, Rf is a perfluoro alkyl group of the formula CF—(CF)—, wherein x is 3-12, n is 1-6, X is O or S, and B is vinylphenyl,'}monomeric unit II is haloalkyl styrene, andoptionally wherein the halo group of haloalkyl is replaced with a substituent selected from the group consisting of alkoxy, alkylcarbonyl, hydroxyalkyl. an acidic group, a basic group, a cation, an anion, a zwitterion, hydroxyl, acyloxy, alkylthio, aldehydo, amido, carbamoyl, ureido, cyano, nitro, ethylenediamine tetra acetic acid, iminodiacetic acid, and iminodisuccinic acid.2. The copolymer of claim 1 , wherein n=2.3. The copolymer of claim 1 , wherein x=4-8.4. The copolymer of claim 1 , wherein monomeric unit II is chloroalkyl styrene.5. The copolymer of claim 1 , wherein the haloalkyl is chloromethyl.6. The copolymer of claim 1 , which is a block copolymer.7. The copolymer of claim 1 , which is a random copolymer.8. A porous membrane comprising the copolymer of claim 1 , disposed on a porous support.9. The porous membrane of claim 8 , wherein the porous support is a porous polymeric support.10. The porous membrane of claim 9 , ...

COMPOSITION AND ORGANIC FILM TRANSISTOR USING THE SAME

A composition comprising a polymer compound (A) containing a repeating unit having a group represented by the formula (1), a compound (B) decomposing to generate an acid by irradiation with an electromagnetic wave or an electronic beam or by heating, and a compound (C) reacting with a hydroxyl group in the presence of an acid: 3. The composition according to claim 1 , wherein the compound (B) is a sulfonic acid ester compound claim 1 , a triazine compound claim 1 , a sulfonium salt or an iodonium salt.4. The composition according to claim 1 , wherein the compound (C) is a melamine compound or a urea compound.5. The composition according to claim 1 , further comprising a solvent.6. A method of producing a film claim 5 , comprising a step of applying the composition according to on a substrate claim 5 , to form a film claim 5 , a step of irradiating a part or several parts of the film with an electromagnetic wave or an electronic beam claim 5 , a step of developing the part or several parts of the film irradiated with an electromagnetic wave or an electronic beam claim 5 , thereby patterning the film claim 5 , and a step of heating the patterned film claim 5 , thereby cross-linking a compound contained in the film.7. A method of producing a film claim 5 , comprising a step of applying the composition according to on a substrate claim 5 , to form a film claim 5 , a step of irradiating a part or several parts of the film with an electromagnetic wave or an electronic beam claim 5 , a step of developing the part or several parts of the film irradiated with an electromagnetic wave or an electronic beam claim 5 , thereby patterning the film claim 5 , and a step of irradiating the patterned film with an electromagnetic wave or an electronic beam claim 5 , then claim 5 , heating the film claim 5 , thereby cross-linking a compound contained in the film.8. The method of producing a film according to claim 6 , wherein the electromagnetic wave is ultraviolet radiation.9. A film ...

Bifunctional Poly(alkyleneoxides) with Aminoalkyl and Unsaturated Termini and Derivatives Thereof

A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described. 1. A heterofunctional poly(alkyleneoxide) having first and second polymer termini , wherein the first polymer terminus comprises a protected , unprotected , or derivatized aminoalkyl functionality and the second polymer terminus comprises an unsaturated functionality.2. The poly(alkyleneoxide) according to claim 1 , wherein the aminoalkyl functionality is a silylated amine functional group.3. The poly(alkyleneoxide) according to claim 1 , wherein the alkyleneoxide is selected from an ethylene oxide claim 1 , a propylene oxide claim 1 , a butylene oxide claim 1 , a hexafluoropropylene oxide claim 1 , and a glycidyl ether of a silicone.4. The poly(alkyleneoxide) according to claim 1 , comprising an α-amine or α-aminoalkyl terminus and an ω-allyl terminus.5. The poly(alkyleneoxide) according to claim 4 , wherein the aminoalkyl terminus is a silylated amine functional group.6. The poly(alkyleneoxide) according to claim 1 , comprising an α-amine or α-aminoalkyl terminus and an ω-vinylbenzyl terminus.7. The poly(alkyleneoxide) according to claim 7 , wherein the aminoalkyl terminus is a silylated amine functional group.8. The poly(alkyleneoxide) according to claim 1 , comprising an a N claim 1 ,N-bis(trimethylsilyl)amine terminus and an ω-allyl terminus.9. The poly(alkyleneoxide) according to claim 1 , comprising an a N claim 1 ,N-bis(trimethylsilyl)amine terminus and an ω-vinylbenzyl terminus.10. A copolymer of the poly(alkyleneoxide) according to with an unsaturated monomer.11. A composition formed by the hydrosilylation of the poly(alkyleneoxide) according to with a siloxane.12. An amide reaction product of a composition ...

PATTERN FORMING METHOD, UNDER COATING AGENT, AND LAMINATE

It is an object of the present invention to provide a pattern forming method capable of easily forming a phase-separated structure with high accuracy, even in the case of widening the applicable range of a pattern size. The present invention relates to a pattern forming method comprising: applying an under coating agent onto a substrate, and applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by a formula () and a structure represented by a formula (), and a polymerization unit (b) having a structure represented by a formula (). 2. The pattern forming method according to claim 1 , wherein the under coating agent comprises a polymer containing at least one selected from a (meth)acrylate-derived unit optionally having a substituent and a styrene-derived unit optionally having a substituent.4. The pattern forming method according to any claim 1 , which further comprises an etching step claim 1 , after completion of the forming the self-assembly film.5. The pattern forming method according to claim 4 , wherein the etching step is a dry etching step.6. The pattern forming method according to claim 4 , wherein the etching step is a wet etching step. The present invention relates to a pattern forming method, an under coating agent, and a laminate.Electronic devices such as semiconductors have been required to be highly integrated as a result of miniaturization thereof. With regard to the patterns of semiconductors, miniaturization and the diversification of the shapes have been studied. As such pattern forming methods, a double patterning method, a lithography method using electron beam, and a pattern forming method ...

POLYMER COMPOUND FOR A CONDUCTIVE POLYMER AND METHOD FOR PRODUCING SAME

A polymer compound for a conductive polymer including one or more repeating units “a” shown by the following general formula (1), and having a weight-average molecular weight in the range of 1,000 to 500,000, Field of the InventionThe present invention relates to a polymer compound for a conductive polymer and a method for producing the same.Description of the Related ArtA polymer containing a sulfo group has been used as a fuel cell or a dopant polymer for a conductive polymer. As a material for a fuel cell, vinyl-perfluoroalkyl ether sulfonic acid represented by Nafion (registered trademark) has been widely used, and as a dopant polymer for a conductive polymer, a polymer of vinylsulfonic acid or styrenesulfonic acid has been widely used (Patent Document 1). Patent Document 2 proposes a fluorinated acid polymer in which protons are substituted by cations as a dopant polymer, and also reveals a dopant of a styrene derivative having a lithium salt of bisfluoroalkylsulfonylimide.The vinylperfluoroalkyl ether sulfonic acid has chemically high stability and excellent durability, but the glass transition point thereof is low, so that there is a problem that when a fuel cell using it is exposed to high temperature, the polymer causes heat flow whereby ion conductivity thereof is lowered. The bisfluoroalkylsulfonylimide-containing styrene derivative has the same problem. A superacidic polymer having a sulfo group an α-position of which has been fluorinated is effective for enhancing the ion conductivity, but a material having high glass transition point and chemical stability with such a structure has not yet been found out.Also, a conductive polymer having a conjugated double bond such as a polythiophene, a polyaniline, a polypyrrole, etc., does not exhibit conductivity itself, but conductivity thereof is expressed by doping therein a strong acid such as sulfonic acid, etc. As the dopant, polystyrene sulfonic acid (PSS) has been most frequently used. This is because ...

Polymer, positive resist composition, and method of forming resist pattern

A polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below, wherein at least one of the monomer unit (A) and the monomer unit (B) includes at least one fluorine atom. In the formulae, R 1 is a chlorine atom, a fluorine atom, or a fluorine atom-substituted alkyl group, R 2 is an unsubstituted alkyl group or a fluorine atom-substituted alkyl group, R 3 to R 6 , R 8 , and R 9 are each a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R 7 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of at least 0 and not more than 5, and p+q=5.

RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE

A radiation-sensitive or actinic ray-sensitive resin composition contains a polymer compound (A) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain and a repeating unit (b) that is represented by the following Formula (I), in the formula, Rrepresents a hydrogen atom, an organic group, or a halogen atom, Arepresents an aromatic ring group or an alicyclic group. Rand Reach independently represent an alkyl group, a cycloalkyl group, or an aryl group, at least two of A, R, or Rmay be bonded to each other to form a ring. Band Leach independently represent a single bond or a divalent linking group, X represents a hydrogen atom or an organic group, n represents an integer of 1 or greater. 3. The radiation-sensitive or actinic ray-sensitive resin composition according to claim 2 ,wherein the structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain has the sulfonium salt structure that is represented by Formula (PZI).4. The radiation-sensitive or actinic ray-sensitive resin composition according to claim 1 ,wherein the polymer compound (A) has a repeating unit (A1) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain.11. The radiation-sensitive or actinic ray-sensitive resin composition according to claim 1 , that is a chemically amplified negative tone resist composition.12. A resist film that is formed of the radiation-sensitive or actinic ray-sensitive resin composition according to .13. A mask blank comprising:{'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, 'the resist film according to .'}14. A resist pattern forming method comprising:{'claim-ref': {'@idref': 'CLM-00012', 'claim 12'}, 'exposing the resist film according to ; and'}developing the exposed resist film.15. A resist pattern forming method comprising:{'claim-ref': {'@ ...

POLYMERIC ACID CATALYSTS AND USES THEREOF

Polymers useful as catalysts in non-enzymatic saccharification processes are provided. Provided are also methods for hydrolyzing cellulosic materials into monosaccharides and/or oligosaccharides using these polymeric acid catalysts. 1. A polymer comprising acidic monomers and ionic monomers connected to form a polymeric backbone ,wherein each acidic monomer comprises at least one Bronsted-Lowry acid, andwherein each ionic monomer independently comprises at least one nitrogen-containing cationic group or phosphorous-containing cationic group.2. The polymer of claim 1 , wherein the Bronsted-Lowry acid at each occurrence is independently selected from the group consisting of sulfonic acid claim 1 , phosphonic acid claim 1 , acetic acid claim 1 , isophthalic acid claim 1 , boronic acid claim 1 , and perfluorinated acid.3. The polymer of claim 1 , wherein one or more of the acidic monomers are directly connected to the polymeric backbone.4. The polymer of claim 1 , wherein one or more of the acidic monomers each further comprise a linker connecting the Bronsted-Lowry acid to the polymeric backbone.5. The polymer of claim 4 , wherein the linker at each occurrence is independently selected from the group consisting of unsubstituted or substituted alkylene claim 4 , unsubstituted or substituted cycloalkylene claim 4 , unsubstituted or substituted alkenylene claim 4 , unsubstituted or substituted arylene claim 4 , unsubstituted or substituted heteroarylene claim 4 , unsubstituted or substituted alkylene ether claim 4 , unsubstituted or substituted alkylene ester claim 4 , and unsubstituted or substituted alkylene carbamate.7. The polymer of claim 1 , wherein the nitrogen-containing cationic group at each occurrence is independently selected from the group consisting of pyrrolium claim 1 , imidazolium claim 1 , pyrazolium claim 1 , oxazolium claim 1 , thiazolium claim 1 , pyridinium claim 1 , pyrimidinium claim 1 , pyrazinium claim 1 , pyradizimium claim 1 , thiazinium claim ...

ELASTOMERIC COPOLYMERS BASED ON [BIS(TRIHYDROCARBYLSILYL)AMINOSILYL]-FUNCTIONALIZED STYRENE AND THEIR USE IN THE PREPARATION OF RUBBERS

The present invention relates to the use of specific styrene derivatives in the production of an elastomeric copolymer. The invention further relates to methods for producing an elastomeric copolymer and an elastomeric copolymer. Moreover, the invention relates to a method for preparing a rubber comprising vulcanizing the elastomeric copolymer, and a rubber as obtainable according to the method. Further, the invention relates to a rubber composition, a tire component comprising the rubber composition, and a tire comprising the tire component. 2. The use of claim 1 , wherein the copolymer comprises claim 1 , in addition to units derived from the styrene derivative of formula (I) claim 1 , units derived from one or more diene monomers and optionally one or more vinyl aromatic monomers claim 1 ,preferably wherein the diene monomer is a conjugated diene monomer.3. The use of claim 1 , wherein an alkali metal salt derivative of the styrene derivative of formula (I) is used as initiator for the copolymerization of i) one or more conjugated diene monomers and optionally ii) one or more vinyl aromatic monomers claim 1 ,wherein the alkali metal is selected from lithium, sodium, and potassium.4. The use of claim 1 , wherein the styrene derivative of formula (I) is used as comonomer claim 1 ,preferably wherein the styrene derivative of formula (I) is used as both x) comonomer and as y) alkali metal salt derivative of the styrene derivative of formula (I), as initiator for the copolymerization.8. The elastomeric copolymer of wherein the diene monomer is a conjugated diene monomer claim 7 ,preferably wherein the conjugated diene monomer is selected from 1,3-butadiene, isoprene, 1,3-pentadiene, 2,3-dimethyl-1,3-butadiene, 2-methyl-1,3-pentadiene, 2,3-dimethyl-1,3-pentadiene, 2-phenyl-1,3-butadiene, and 4,5-diethyl-1,3-octadiene,more preferably wherein the conjugated diene monomer is selected from 1,3-butadiene and isoprene,in particular wherein the conjugated diene monomer is 1,3 ...

COMPOSITIONS AND METHODS FOR TREATING HYPERKALEMIA

The present invention is directed to compositions and methods of removing potassium or treating hyperkalemia by administering pharmaceutical compositions of cation exchange polymers with low crosslinking for improved potassium excretion and for beneficial physical properties to increase patient compliance. 2. The calcium salt of claim 1 , wherein the ratio of m to n is from about 70:1 to about 50:1 or from about 70:1 to about 60:1.34.-. (canceled)5. The calcium salt of claim 1 , wherein Y is phenyl.6. The calcium salt of claim 1 , wherein X is absent or phenyl.7. The calcium salt of claim 1 , wherein X is absent and Ris H when XRis attached to the carbon atom substituted with Y.8. The calcium salt of claim 1 , wherein Ris H.9. The calcium salt of claim 1 , wherein Rand Rare each independently H or —S(O)OH.10. Them calcium salt of claim 1 , wherein the potassium binding polymer is characterized by a swelling ratio in water of from about 3 grams of water per gram of polymer to about 8 grams of water per gram of polymer or from about 3 grams of water per gram of polymer to about 4.5 grams of water per gram of polymer.1113.-. (canceled)14. The calcium salt of claim 1 , wherein the potassium binding polymer further comprises substantially spherical particles having a median diameter from about 5 m to about 130 m.15. The calcium salt of claim 14 , wherein the particles have an average particle size Dv(0.9) from about 80 μm to about 130 μm or from about 90 μm to about 120 μm.16. (canceled)17. The calcium salt of claim 14 , wherein the particles have an average particle size Dv(0.9) from about 40 μm to about 70 μm or from about 50 μm to about 60 μm.18. (canceled)19. The calcium salt of claim 14 , wherein the particles have an average particle size Dv(0.5) from about 60 μm to about 90 μm or from about 70 μm to about 80 μm.20. (canceled)21. The calcium salt of claim 14 , wherein the particles have an average particle size Dv(0.5) from about 20 μm to about 50 μm or from about ...

[bis(trihydrocarbylsilyl)aminosilyl]-functionalized styrene and a method for its preparation

The invention relates to [bis(trihydrocarbylsilyl)aminosilyl]-functionalized styrene and a method for its preparation. The invention further relates to the use of the styrene derivative in the preparation of a copolymer thereof.

Random Copolymer for Forming Neutral Layer, Laminate for Forming Pattern Including the Same, and Method for Forming Pattern Using the Same

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Random Copolymer, Laminate, and Method for Forming Pattern

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same. 5. The random copolymer of claim 1 , wherein in Chemical Formulae 1 and 2 claim 1 ,{'sub': 1', '3', '1', '10, 'Rand Rare independently of one another hydrogen or a Cto Calkyl group,'}{'sub': 2', '1', '10, 'Ris a Cto Calkyl group, and'}{'sub': 4', '8, 'Rto Rare independently of one another hydrogen or halogen.'}8. The random copolymer of claim 1 , wherein in Chemical Formulae 1 and 2 claim 1 ,{'sub': 1', '3', '1', '5, 'Rand Rare independently of one another hydrogen or a Cto Calkyl group,'}{'sub': 2', '1', '5, 'Ris a Cto Calkyl group, and'}{'sub': 4', '8, 'Rto Rare independently of one another hydrogen or halogen.'}9. The random copolymer of claim 1 , wherein the random copolymer includes 0.1 to 20 mol % of a monomer of the structural unit represented by Chemical Formula 3 claim 1 , based on total 100 mol % of the monomers forming the random copolymer.10. The random copolymer of claim 1 , whereinthe random copolymer has a number average molecular weight of 1,000 to 500,000 g/mol, anda polydispersity index of 1.0 to 2.0.11. A laminate for forming a pattern claim 1 , comprising:a substrate, and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a neutral layer including the random copolymer of , formed on the substrate.'}13. A method for forming a pattern claim 1 , using the random copolymer of claim 1 , and a block copolymer.14. The method of claim 13 , comprising:a) applying a random copolymer solution including the random copolymer on a substrate,b) subjecting the applied random copolymer solution to heat treatment to form a neutral layer,c) applying a block copolymer solution including the block copolymer on the neutral layer, andd) subjecting the applied block copolymer solution to heat treatment to form a pattern.15. The method of claim 14 ...

FLUORO-ALCOHOL ADDITIVES FOR ORIENTATION CONTROL OF BLOCK COPOLYMERS

A film layer comprising a high-chi (χ) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0 Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block. 3. The SAP of claim 1 , wherein E′ and/or E′ comprises 10 to 25 fluorines.4. The SAP of claim 1 , wherein P′ is a homopolymer of the HFA repeat unit.11. The SAP of claim 1 , wherein R″ is *—H.12. The SAP of claim 1 , wherein R″ is methyl (*—CH).13. The SAP of claim 1 , wherein R″ is ethyl (*-Et).14. The SAP of claim 1 , wherein R″ is trifluoromethyl (*—CF).15. The SAP of claim 1 , wherein the SAP is a random copolymer comprising the HFA repeat unit. The following disclosure(s) are submitted under 35 U.S.C. 102(b)(1)(A):The present invention relates to fluoro-alcohol additives for orientation control of block copolymers used in directed self-assembly applications, and more specifically to materials for top orientation-control of high-chi (χ) block copolymers containing a polycarbonate block.Block copolymers (BCPs) find many applications in solution, bulk and thin films. Thin film applications of BCPs are particularly attractive for nanolithography and patterning due to the ability of some BCPs to form periodic self-assembled structures ranging in feature size from 5 nm to 50 nm. The thin-film self-assembly property of BCPs can be utilized with ...

RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed are a resin containing a structural unit represented by formula (I), a structural unit represented by formula (a1-1), a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-A), and a resist composition including the same: 2. The resin according to claim 1 , wherein Ais a single bond.3. A resist composition comprising the resin according to and an acid generator.5. The resist composition according to claim 3 , further comprising a salt generating an acid having an acidity lower than that of an acid generated from the acid generator.6. A method for producing a resist pattern claim 3 , which comprises:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, '(1) a step of applying, on a substrate, the resist composition according to ,'}(2) a step of drying the applied composition to form a composition layer,(3) a step of exposing the composition layer,(4) a step of heating the exposed composition layer, and(5) a step of developing the heated composition layer. The present invention relates to a resin, a resist composition, and a method for producing a resist pattern using the resist composition and the like.Patent Document 1 mentions a resist composition comprising a resin including the following structural units.Patent Document 2 mentions a resist composition comprising a resin including the following structural units.Patent Document 1: JP 2002-214788 APatent Document 2: JP 2013-205811 AAn object of the present invention is to provide a resin which forms a resist pattern with CD uniformity (CDU) better than that of a resist pattern formed by a resist composition comprising the resin.The present invention includes the following inventions.[1] A resin comprising a structural unit represented by formula (I), a structural unit represented by formula (a1-1), a structural unit represented by formula (a1-2) and a structural unit represented by formula (a2-A):wherein, in formula (I),Rrepresents a hydrogen atom or a methyl group, ...

ELASTOMERIC COPOLYMERS BASED ON [BIS(TRIHYDROCARBYLSILYL)AMINOSILYL]-FUNCTIONALIZED STYRENE AND THEIR USE IN THE PREPARATION OF RUBBERS

The present invention relates to the use of specific styrene derivatives in the production of an elastomeric copolymer. The invention further relates to a method for producing an elastomeric copolymer and an elastic copolymer. Moreover, the invention relates to a method for preparing a rubber comprising vulcanizing the elastomeric copolymer, and a rubber as obtainable according to the method. Further, the invention relates to a rubber composition, a tire component comprising the rubber composition, and a tire comprising the tire component. 2. The method of claim 1 , wherein the copolymer comprises claim 1 , in addition to units derived from the styrene derivative of formula (I) claim 1 , units derived from one or more diene monomer(s) and optionally one or more vinyl aromatic monomer(s) claim 1 , preferably wherein the diene monomer is a conjugated diene monomer.5. The elastomeric copolymer of wherein the diene monomer is a conjugated diene monomer claim 4 ,preferably wherein the conjugated diene monomer is selected from 1,3-butadiene, isoprene, 1,3-pentadiene, 2,3-dimethyl-1,3-butadiene, 2-methyl-1,3-pentadiene, 2,3-dimethyl-1,3-pentadiene, 2-phenyl-1,3-butadiene, and 4,5-diethyl-1,3-octadiene,more preferably wherein the conjugated diene monomer is selected from 1,3-butadiene and isoprene,in particular wherein the conjugated diene monomer is 1,3-butadiene.6. The elastomeric copolymer of claim 5 , wherein the amount of A) conjugated diene monomer(s) is 40 to 90 wt. % claim 5 , by weight of the copolymer claim 5 , preferably 50 to 90 wt. % claim 5 , by weight of the copolymer claim 5 , in particular 60 to 90 wt. % claim 5 , by weight of the copolymer.7. The elastomeric copolymer of wherein the vinyl aromatic monomer is selected from styrene claim 4 , 1-vinylnaphthalene claim 4 , 3-methyl styrene claim 4 , 3 claim 4 ,5-diethyl styrene claim 4 , 4-propyl styrene claim 4 , 2 claim 4 ,4 claim 4 ,6-trimethyl styrene claim 4 , 4-dodecylstyrene claim 4 , 3-methyl-5-n-hexyl ...

IODONIUM SALT, RESIST COMPOSITION, AND PATTERN FORMING PROCESS

A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU. 2. The iodonium salt of wherein Rand Rare each independently hydrogen claim 1 , fluorine claim 1 , methyl or trifluoromethyl.3. The iodonium salt of wherein Arand Arare each independently unsubstituted phenyl or a phenyl group substituted with halogen claim 1 , alkyl or alkoxy at the para-position to the iodine atom.4. A quencher comprising the iodonium salt of .5. A resist composition comprising the quencher of .8. The resist composition of claim 5 , further comprising an organic solvent.9. The resist composition of claim 5 , further comprising a photoacid generator.11. The resist composition of claim 5 , further comprising an amine compound.12. The resist composition of claim 5 , further comprising a surfactant which is insoluble or substantially insoluble in water and soluble in alkaline developer claim 5 , and/or a surfactant which is insoluble or substantially insoluble in water and alkaline developer.13. A pattern forming process comprising the steps of applying the resist composition of onto a substrate to form a resist film claim 5 , exposing a selected region of the resist film to KrF excimer laser claim 5 , ArF excimer laser claim 5 , EB or EUV claim 5 , and developing the exposed resist film in a developer.14. The pattern forming process of wherein the developing step uses an alkaline aqueous solution as the developer claim 13 , thereby forming a positive pattern in which an exposed region of the resist film is dissolved away and an unexposed region of the resist film is not dissolved.15. The pattern forming process of wherein the developing step uses an organic solvent as the developer claim 13 , thereby forming a negative pattern in which an unexposed region ...

METHOD FOR PREPARING POLYMERIC MATERIALS COMPRISING ONE OR SEVERAL METAL ELEMENTS

The invention relates to a method for preparing a polymeric material doped with at least one first metal element and at least one second metal element, said at least one first metal element and said at least one second metal element being identical or different from each other, said method comprising: 1: A method for preparing a polymeric material doped with at least one first metal element and at least one second metal element , said at least one first metal element and said at least one second metal element being identical or different from each other , said method comprising:a) copolymerization of at least one first monomer comprising at least one first metal element and of at least one second monomer comprising at least one chelating group of at least one second metal element, to obtain a polymeric material comprising recurrent units deriving from the polymerization of said first monomer, said recurrent units comprising said at least one first metal element and comprising recurrent units deriving from the polymerization of said second monomer, said recurrent units comprising chelating groups of at least one second metal element, to obtain a material a); andwhen said first metal element is different from said second metal element, said method further comprising a stepb) contacting the material a) with a solution comprising said at least second metal element, in order to complex said at least second metal element with the aforementioned chelating groups,wherein the contacting b) is optional when said first metal element and said second metal element are identical.2: The method for preparing a material according to claim 1 , wherein claim 1 , when said at least one first metal element and said at least one second metal element are identical claim 1 , the method does not comprise the contacting b).3: The method for preparing a material according to claim 1 , wherein claim 1 , when said at least one first metal element and said at least one second metal element are ...

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising a base polymer and a quencher containing a sulfonium salt having an iodized benzene ring offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone. 2. The resist composition of wherein m is an integer of 2 to 5.3. The resist composition of claim 1 , further comprising an organic solvent.4. The resist composition of claim 1 , further comprising an acid generator capable of generating a fluorosulfonic acid claim 1 , fluoroimidic acid or fluoromethide acid.5. The resist composition of claim 1 , further comprising a base polymer.7. The resist composition of which is a chemically amplified positive resist composition.8. The resist composition of wherein the base polymer is free of an acid labile group.9. The resist composition of which is a chemically amplified negative resist composition.11. The resist composition of claim 1 , further comprising a surfactant.12. A process for forming a pattern comprising the steps of applying the resist composition of onto a substrate claim 1 , baking to form a resist film claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer.13. The process of wherein the high-energy radiation is ArF excimer laser radiation of wavelength 193 nm or KrF excimer laser radiation of wavelength 248 nm.14. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2018-173598 filed in Japan on Sep. 18, 2018, the entire contents of which are hereby incorporated by reference.This invention relates to a resist composition and a pattern forming process.To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. In particular, the enlargement of the logic memory market to comply with the wide-spread use ...

ANTIREFLECTIVE FILM INCLUDING A PHOTORESIST MATERIAL CONTAINING A POLYMER COMPOUND HAVING AN AROMATIC GROUP, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY

An antireflective film including: a support base, and a pattern composed of a photoresist material formed on the support base, the pattern having a larger size at a point closer to the support base. The photoresist material contains a polymer compound having an aromatic group, and the polymer compound includes at least one of: (i) a repeating unit having a cyclopentadienyl complex structure, (ii) a repeating unit having a naphthalene structure, and (iii) a repeating unit having a naphthalene structure and/or a fluorene structure. The repeating units having a naphthalene structure may include one of the following units: 2. The antireflective film according to claim 1 , wherein the pattern has a pitch of 400 nm or less.3. The antireflective film according to claim 1 , wherein the photoresist material contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene claim 1 , fluorene claim 1 , anthracene claim 1 , and cyclopentadienyl complexes.4. The antireflective film according to claim 2 , wherein the photoresist material contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene claim 2 , fluorene claim 2 , anthracene claim 2 , and cyclopentadienyl complexes.5. The antireflective film according to claim 1 , wherein the photoresist material contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine claim 1 , benzene (meth)acrylate substituted with iodine or bromine claim 1 , and benzene (meth)acrylamide substituted with iodine or bromine.6. The antireflective film according to claim 2 , wherein the photoresist material contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine claim 2 , benzene (meth)acrylate substituted with iodine or bromine ...

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU. 2. The resist composition of wherein Rcontains at least one fluorine claim 1 , bromine or iodine atom.3. The resist composition of claim 1 , further comprising an acid generator capable of generating sulfonic acid claim 1 , sulfonimide or sulfonmethide.4. The resist composition of claim 1 , further comprising an organic solvent.6. The resist composition of claim 5 , further comprising a dissolution inhibitor.7. The resist composition of which is a chemically amplified positive resist composition.8. The resist composition of wherein the base polymer is an acid labile group-free polymer.9. The resist composition of claim 8 , further comprising a crosslinker.10. The resist composition of which is a chemically amplified negative resist composition.12. The resist composition of claim 1 , further comprising a surfactant.13. A pattern forming process comprising the steps of coating the resist composition of onto a substrate claim 1 , baking claim 1 , exposing the resulting resist film to high-energy radiation claim 1 , and developing with a developer.14. The process of wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.15. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2016-197752 filed in Japan on Oct. 6, 2016, the entire contents of which are hereby incorporated by reference,This invention relates to a resist composition comprising a metal salt of carboxylic acid or sulfonamide, the ...

ADDITIVE AND RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING THE SAME

An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: 2. The additive according to claim 1 , wherein the protecting group is acetyl group claim 1 , methoxymethyl group claim 1 , ethoxyethyl group claim 1 , a Ctertiary alkyl group claim 1 , or pivaloyl group.5. The additive according to claim 1 , wherein the copolymer is a compound synthesized by copolymerization of a monomer forming the structural unit of Formula (1) claim 1 , a monomer forming the structural unit of Formula (2) claim 1 , a monomer forming the structural unit of Formula (3) claim 1 , and a monomer forming the structural unit of Formula (4) claim 1 , and the content of the monomer forming the structural unit of Formula (2) is 5% by mole to 40% by mole relative to a total of the four monomers of 100% by mole.6. The additive according to claim 1 , wherein the copolymer has a weight average molecular weight of 3 claim 1 ,000 to 20 claim 1 ,000.7. A resist underlayer film-forming composition containing the additive according to claim 1 , a resin different from the copolymer claim 1 , an organic acid claim 1 , a cross-linking agent claim 1 , and a solvent.8. The resist underlayer film-forming composition according to claim 7 , wherein the resin is polyester.9. The resist underlayer film-forming composition according to claim 7 , wherein the additive is contained in an amount of 5 parts by mass to 20 parts by mass relative to 100 parts by mass of the resin.10. A method for forming a resist pattern comprising the steps of:{'claim-ref': {'@idref': 'CLM-00007', 'claim 7'}, 'forming a resist underlayer film on a substrate using the resist underlayer film-forming composition according to ;'}forming a resist film on the resist underlayer film using a positive resist solution;exposing the resist film through a photomask; anddeveloping the resist film by a solvent ...

MOLECULARLY IMPRINTED POLYMER BEADS FOR EXTRACTION OF LITHIUM, MERCURY, AND SCANDIUM

The present disclosure provides Molecularly Imprinted Polymer (MIP) technology for selectively sequestering one or more target molecules from chemical mixtures. Also disclosed herein are MIP beads and methods of making and using thereof. 1. A plurality of macroreticular polymer beads comprising a copolymer having a plurality of complexing cavities which selectively bind Au(SO) , wherein the copolymer is prepared from:(a) a cationic ligand monomer complexed to a non-metal surrogate ion selected from the group consisting of tetrathionate, pentathionate, hexathionate; hexadionate, heptyldionate, octyidionate; 1,4-phenylene diacetate; butane disulfonate, pentane disulfonate, and hexane disulfonate,(b) a non-ligand monomer, and(c) a crosslinking monomer;whereinthe charge of the copolymer in the complexing cavity is opposite the charge of the target metal ion.2. A plurality of macroreticular polymer beads comprising a copolymer having a plurality of complexing cavities which selectively bind scandium tricarbonate , wherein the copolymer is prepared from:(a) a cationic ligand monomer complexed to a tribasic salt of benzene-1,3,5-triyl-tricarboxylate,(b) a non-ligand monomer, and(c) a crosslinking monomer;wherein the charge of the copolymer in the complexing cavity is opposite the charge of the target metal ion.3. The macroreticular beads of claim 1 , wherein the cationic ligand monomer is a polymerizable cation selected from the group consisting of ammonium claim 1 , pyridinium claim 1 , pyrollidinium claim 1 , imidazolium claim 1 , guanidinium claim 1 , phosphonium and sulfonium.4. The macroreticular beads of claim 3 , wherein the cationic ligand monomer is a 4-vinylbenzyl ammonium.5. The macroreticular beads of claim 4 , wherein the ligand monomer is N-(4-vinylbenzyl)-N claim 4 ,N claim 4 ,N-tri-n-pentyl ammonium or N-(4-vinylbenzyl)-N-decyl-N claim 4 ,N-dimethylammonium.6. The macroreticular beads of claim 4 , wherein the ligand monomer is N-(4-vinylbenzyl)-N claim 4 ,N ...

PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK

A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I). 5. The pattern forming method according to claim 1 , wherein the actinic ray-sensitive or radiation-sensitive resin composition further comprises a compound that generates an acid by active light or radiation.6. The pattern forming method according to claim 5 , wherein the compound that generates an acid by active light or radiation is a compound that generates an acid in a size for a volume of 240 Angstromor more.7. The pattern forming method according to claim 1 , which uses electron beams or extreme ultraviolet rays as the active light or radiation.8. A method for manufacturing an electronic device claim 1 , comprising the pattern forming method according to .11. A resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition according to .12. A mask blank comprising the resist film according to . This application is a Continuation of PCT International Application No. PCT/JP2015/64462, filed on May 20, 2015, which claims priority under 35 U.S.C. §119(a) to Japanese Patent Application No. 2014-157599, filed on Aug. 1, 2014. Each of the above application(s) is hereby expressly incorporated by reference, in its entirety, into the present application.1. Field of the InventionThe present invention relates to a pattern forming method using a developer including an organic solvent, which is appropriately used in an ultramicrolithography process for the manufacture of a super-LSI or a high-capacity microchip, or the like, or other photofabrication processes; a method for manufacturing an electronic device; and an electronic device. ...

BIFUNCTIONAL POLY(ALKYLENEOXIDES) WITH AMINOALKYL AND UNSATURATED TERMINI AND DERIVATIVES THEREOF

A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described. 1. A composition formed by the hydrosilylation of a siloxane with a heterofunctional poly(alkyleneoxide) having a linear completely poly(alkyleneoxide) backbone and first and second polymer termini , wherein the first polymer terminus comprises a protected , unprotected , or derivatized aminoalkyl functionality and the second polymer terminus comprises an unsaturated functionality.2. An amide reaction product of a composition according to with an acid chloride.3. A substituted urea product of a composition according to with an isocyanate.4. The reaction product according to claim 2 , wherein the amide is an acrylamide claim 2 , methacrylamide claim 2 , or alkylamide functional macromer.5. The composition according to claim 1 , wherein the composition is 1-butyl-9-aminoethoxy(polyethyleneoxy)propyl decamethylpentasiloxane.6. The composition according to claim 1 , wherein the composition is 1-butyl-n-methacrylamidoethoxy(polyethyleneoxy)propyl decamethylpentasiloxane.7. The composition according to claim 1 , wherein the protected aminoalkyl functionality comprises a silylated aminoalkyl group claim 1 , the unprotected aminoalkyl functionality comprises an α-aminoalkyl group claim 1 , and the derivatized aminoalkyl functionality comprises an amide or urea group.8. The composition according to claim 1 , wherein the unsaturated functionality is coupled to the poly(alkyleneoxide) backbone by an ether linkage.9. A composition formed by the hydrosilylation of a silane with a heterofunctional poly(alkyleneoxide) having a linear completely poly(alkyleneoxide) backbone and first and second polymer termini claim 1 , wherein the first ...

Dispersion of electrically conductive polymer, and electrically conductive polymer and use thereof

There is provided a conductive polymer having high conductivity with excellent heat resistance. Using the conductive polymer, there can be provided solid electrolytic capacitors having low ESR, high reliability, and less leakage current. There can be also provided conductive films having high conductivity and superior heat resistance. There is provided a conductive polymer dispersion liquid obtained by a method in which in the presence of a copolymer from styrenesulfonic acid, and at least one kind of a non-sulfonic acid monomer selected from the group consisting of methacrylate, acrylate, and an unsaturated hydrocarbon containing alkoxysilane compound or its hydrolysate, thiophene or its derivative is polymerized by oxidation polymerization in water, or in an aqueous solution comprising a mixture of water and a water miscible solvent to produce the conductive polymer dispersion liquid. Using the conductive polymer as solid electrolyte, a solid electrolyte capacitor can be provided. Also, using the conductive polymer, a conductive film can be provided.

ION EXCHANGE MEMBRANE, METHOD FOR MANUFACTURING SAME, MODULE, AND DEVICE

An object of the present invention is to provide a high-performance ion exchange membrane having a small defect and a sufficient mechanical strength, a method for manufacturing the ion exchange membrane, and a module and a device which include the ion exchange membrane. 3. The ion exchange membrane according to claim 1 ,{'sup': a', 'b', 'c', 'd, 'wherein Rand Rand/or Rand Rform a ring by being bonded to each other.'}4. The ion exchange membrane according to claim 2 ,{'sup': e', 'f', 'g', 'h, 'wherein Rand Rand/or Rand Rform a ring by being bonded to each other.'}5. The ion exchange membrane according to claim 1 ,{'sub': 1', '2, 'sup': −', '−, 'wherein X and X each independently are a halide ion.'}6. The ion exchange membrane according to claim 1 ,wherein the resin further has a cross-linked structure in addition to the constitutional unit represented by Formula 1.7. The ion exchange membrane according to claim 6 ,wherein a content of the cross-linked structure other than the constitutional unit represented by Formula 1 is 0.05 to 0.5 mmol/g with respect to a total mass of the resin.10. The method for manufacturing the ion exchange membrane according to claim 9 ,wherein the compound represented by Formula 5 is a liquid at 25° C.11. The method for manufacturing the ion exchange membrane according to claim 9 ,wherein a content of the compound represented by Formula 5 in the composition is equal to or greater than 50% by weight.12. The method for manufacturing the ion exchange membrane according to claim 9 ,wherein the composition does not contain an organic solvent, or a content of an organic solvent in the composition is greater than 0% by mass and equal to or less than 1% by mass.13. The method for manufacturing the ion exchange membrane according to claim 8 ,wherein X is a halogen atom.14. The method for manufacturing the ion exchange membrane according to claim 8 ,wherein in the reaction step, both of the constitutional unit represented by Formula 1 and the ...

PHOSPHINE TRIPLY CROSS-LINKED BY ORGANIC POLYMER, TRANSITION METAL COMPLEX USING SAID PHOSPHINE AS A LIGAND, AND CATALYST

Provided are: a polymer-supported phosphane compound exhibiting excellent catalytic reaction activity; a complex including the compound and a transition metal; and a catalyst including the complex. This polymer compound includes: units of threefold styrene cross-linked phosphane; and styrene units having substituent groups (R) in position 4 (provided that R represents hydrogen, a C1-6 lower alkyl group, a C1-6 lower alkoxy group, or a polar functional group). In the formula in which the polymer compound includes structure (1), PS represents a polystyrene unit chain including the styrene units having the substituent groups (R). The complex includes the polymer and a transition metal. The catalyst for an organic compound coupling reaction includes the complex. 19.-. (canceled)10. A complex comprising a polymer compound and a transition metal , wherein the polymer compound comprises a threefold styrene cross-linked phosphane unit and styrene units each having a substituent R at the 4-position wherein R represents a hydrogen atom , a lower alkyl group having 1 to 6 carbon atoms , a lower alkoxy group having 1 to 6 carbon atoms , or a polar functional group , wherein the styrene units have substituents R which are the same or different , and wherein the polymer compound binds to the transition metal through a phosphine group in the threefold styrene cross-linked phosphane unit.11. The complex according to claim 10 , further comprising claim 10 , as a ligand claim 10 , an atom or group selected from halogen claim 10 , carbonyl claim 10 , hydroxy claim 10 , nitro claim 10 , amino claim 10 , sulfonyl claim 10 , and cyano.12. The complex according to claim 11 , wherein when the ligand is carbonyl claim 11 , the carbonyl is present in a group selected from ester claim 11 , aldehyde claim 11 , ketone claim 11 , and amide.13. The complex according to claim 10 , wherein the transition metal is selected from palladium claim 10 , iridium claim 10 , rhodium claim 10 , platinum ...

CROSSLINKABLE REACTIVE POLYMERS

Crosslinkable reactive polymers comprise -A- and —B— recurring units, arranged randomly along a backbone. The -A- recurring units comprise pendant aromatic sulfonic acid oxime ester groups that are capable of providing pendant aromatic sulfonic acid groups upon irradiation with radiation having a λof at least 150 nm and up to and including 450 nm. The -A- recurring units are present in the reactive polymer in an amount of greater than 50 mol % and up to and including 98 mol % based on total reactive polymer recurring units. The —B— recurring units comprise pendant groups that provide crosslinking upon generation of the aromatic sulfonic acid groups in the -A- recurring units. The —B— recurring units are present in an amount of at least 2 mol %, based on total reactive polymer recurring units. These reactive polymers can be used in various pattern-forming methods. 1. A reactive polymer comprising a backbone and at least -A- and —B— recurring units , arranged randomly along the backbone ,wherein:{'sub': 'max', 'the -A- recurring units comprise pendant aromatic sulfonic acid oxime ester groups that are capable of providing pendant aromatic sulfonic acid groups upon irradiation with radiation having a λof at least 150 nm and up to and including 450 nm, the -A- recurring units being present in the reactive polymer in an amount of greater than 50 mol % and up to and including 98 mol % based on total reactive polymer recurring units, and'}the —B— recurring units comprise pendant groups that can provide crosslinking upon generation of the pendant aromatic sulfonic acid groups in the -A- recurring units, the —B— recurring units being present in an amount of at least 2 mol %, based on total reactive polymer recurring units.2. The reactive polymer of claim 1 , wherein the -A- recurring units are present in an amount of at least 60 mol % and up to and including 95 mol % based on total reactive polymer recurring units.3. The reactive polymer of claim 1 , wherein the —B— ...

RESIST COMPOSITION AND PATTERN FORMING PROCESS

A resist composition comprising a polymer comprising recurring units (a) of formula (1) and having a Mw of 1,000-500,000 as base resin is provided. Ris H or methyl, X is a single bond or —C(═O)—O—R—, Ris a single bond or C-Calkylene, Ris C-Calkylene, Ris an acid labile group, Ris a single bond or C-Calkylene, and 0 Подробнее

bFGF-POLYMER CONJUGATES, METHODS FOR MAKING THE SAME AND APPLICATIONS THEREOF

A heparin mimicking polymer, its conjugate with bFGF, and method of making and using the same are disclosed. In particular, described herein are conjugates of biologic agents (e.g., bFGF) and heparin mimicking polymers having superior stability while retaining full native activity after a variety of stressors. 1. A heparin mimicking polymer , comprising a reactive group that reacts with a moiety in a target protein causing a covalent attachment of the heparin mimicking polymer to the target protein , wherein the reactive group is capable of reacting with the moiety in the target protein selected from the group consisting of a free thiol group , an amine group , an aldehyde group , a carboxyl group , a hydroxyl group , a ketone group , an oxo group , an azide group , an alkyne group , and a combination thereof.2. The heparin mimicking polymer of claim 1 , wherein the reactive group is capable of reacting with the moiety in the target protein which is present naturally in the target protein or added by chemical or biological modification.3. The heparin mimicking polymer of claim 1 , wherein the reactive group is selected from the group consisting of activated disulfides claim 1 , pyridyl disulfide claim 1 , 5-thio-2-nitrobenzoic acid claim 1 , disulfide reductants. Michael acceptors claim 1 , maleimides claim 1 , maleimide derivatives claim 1 , dihalomaleimides claim 1 , vinyl groups claim 1 , vinyl sulfones claim 1 , acryloyl derivatives claim 1 , haloacetyl claim 1 , alkyl halide derivatives claim 1 , aziridines claim 1 , arylating agents claim 1 , isothiocyanates claim 1 , isocyanates claim 1 , acryl azides claim 1 , activated esters claim 1 , N-hydroxysuccinimide esters claim 1 , para-nitrophenyl esters claim 1 , sulfonyl chlorides claim 1 , aldehydes and glyoxals (with or without reductive amination) claim 1 , epoxides (also called oxiranes) claim 1 , carbonates claim 1 , arylating agents claim 1 , imidoesters claim 1 , carbodiirnides claim 1 , anhydrides claim 1 ...

POLYMER MONOLITHS FOR SOLVENT EXCHANGE IN CONTINUOUS FLOW MICROFLUIDIC DEVICE

The present disclosure relates to the novel multistep procedure for preparation of polymer monoliths for use in solvent exchange, such as methods to exchange and activate fluoride ions on a flow through microfluidic chip for subsequent chemical synthesis. Methods according to the present disclosure include the application of such microfluidic platforms for rapid F18 radiosynthesis on a flow through microfluidic chip with high efficiency, followed by a subsequent nucleophilic fluorination reaction. Various other methods of exchanging and activating fluoride ions on a flow through microfluidic chip are also disclosed. Methods incorporating features of the present invention can be applicable to any flow through microfluidic device in any field, such as radiosyntheses, chemical syntheses, concentration of ions for environmental analyses and sample preparation such as concentrating minute amounts of analyte to improve the downstream detection. 1. A method of exchanging and activating fluoride ions on a flow through microfluidic chip , comprising the steps of:providing a microfluidic chip with one or more channels on or in the chip;vinylizing the microfluidic chip;forming and covalently anchoring polymer monoliths in the one or more channels;{'sup': '18', 'flowing [F] Fluoride ion water through the monoliths in the one or more channels; and'}{'sup': '18', 'eluting the []F fluoride ion via treatment with cryptands and potassium carbonate or potassium bicarbonate, or tetraalkylammonium bicarbonate.'}2. The method of claim 1 , wherein the microfluidic chip comprises glass.3. The method of claim 1 , wherein the one or more channels are serpentine channels formed in the chip.4. The method of claim 3 , wherein the polymer monoliths are within the one or more channels and the volume of the polymer monoliths is at least 13 μL.5. The method of claim 4 , wherein the serpentine channels have a cross section of about 150 μm×150 μm and a length of about 52000 μm.6. The method of claim ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition including a polymeric compound having a structural unit in which a compound represented by formula (a0-1) has a polymerizable group within the Wportion converted into a main chain, and a compound represented by formula (b1-1) in which Wrepresents a polymerizable group-containing group; Crepresents a tertiary carbon atom, and the α-position of Cis a carbon atom which constitutes a carbon-carbon unsaturated bond; Rrepresents an aromatic hydrocarbon group or a chain hydrocarbon group; Rand Rare mutually bonded to form a 5-membered aliphatic monocyclic group, or a condensed polycyclic hydrocarbon group containing a 5-membered aliphatic monocyclic ring; Rrepresents a cyclic group; R, Rand Reach independently represents a substituent; nrepresents an integer of 0 to 4; nrepresents an integer of 0 to 5; nrepresents an integer of 0 to 5; and X represents a counteranion. 2. The resist composition according to claim 1 , wherein the amount of the structural unit (a0) based on the combined total (100 mol %) of all structural units constituting the polymeric compound is 40 mol % or more.17. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern.18. The resist pattern forming method according to claim 17 , wherein the resist film is exposed to extreme ultraviolet (EUV) or electron beam (EB). The present invention relates to a resist composition and a method of forming a resist pattern.Priority is claimed on Japanese Patent Application No. 2018-207774, filed Nov. 2, 2018, the content of which is incorporated herein by reference.In lithography techniques, for example, a resist film composed of a resist material is formed on a substrate, and the resist film is subjected to selective exposure, followed by development, thereby forming a resist pattern having ...

NOVEL CROSS-LINKER FOR THE PREPARATION OF A NEW FAMILY OF SINGLE ION CONDUCTION POLYMERS FOR ELECTROCHEMICAL DEVICES AND SUCH POLYMERS

A specific cross-linker, an alkaline metal bis(styrenesulfonyl)imide monomer, is used in the synthesis of single ionic conductive copolymers that are non-fluorinated and non-PEO based. Such copolymers meet the security and costs requirements to be used as solid polymers electrolytes (SPE). They are promising alternatives to standard liquid electrolytes in alkaline metal-ion batteries because of their improved security and inflammability properties. The copolymers described are either polyvinylsulfonates or acrylate vinylsulfonate block-copolymers. Preferred acrylate monomers are methacrylates and preferred vinylsulfonates are styrene sulfonates. The copolymer is prepared by radical polymerization of the vinyl sulfonate and the cross-linker and optionally the acrylate, in particular radical photopolymerization using a functionalized bis(acyl)phosphane oxide (BAPO) as photoinitiator. Also described is the use of such copolymer as solid polymer electrolyte in a lithium ion battery. 2. The bis(styrylsulfonylimide) salt of formula (I) wherein M is lithium.3. Use of a bis(styrylsulfonylimide) salt of as cross linking monomer in the production of a solid conducting polymer.4. Use of a bis(styrylsulfonylimide) salt of as cross linking monomer in the production of a solid polymer electrolyte.5. . A solid single-ion conducting polymer produced by copolymerizing the bis(styrylsulfonylimide) salt of claim 1 , as cross linking monomer claim 1 , with an alkaline metal vinyl sulfonate monomer and a radical initiator claim 1 , said radical initiator being selected from the group consisting of photoinitiators claim 1 , a thermal initiator and combinations thereof.6. The solid single-ion conducting polymer of claim 5 , wherein it is a solid polymer electrolyte.7. The solid single-ion conducting polymer of claim 5 , wherein an acrylate monomer is used.8. The solid single-ion conducting polymer of claim 7 , wherein said acrylate monomer is a methacrylate monomer.9. The solid single-ion ...

COMPOUND FOR ORGANIC LIGHT-EMITTING DEVICE, CROSS-LINKED MATERIAL THEREOF, AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING CROSS-LINKED MATERIAL

A compound for an organic light-emitting device represented by Formula 1: 2. The compound of claim 1 , wherein the first cross-linking group comprises at least one carbon-carbon double bond.4. The compound of claim 1 , whereinthe first cross-linking group is selected from a vinyl group, a maleimide group, a styrene group, and an acrylate group; and{'sub': 1', '20', '1', '20, 'a vinyl group, a maleimide group, a styrene group, and an acrylate group, each substituted with at least one selected from —F, —Cl, —Br, —I —C(═O)—, a cyano group, a nitro group, a C-Calkyl group, and a C-Calkoxy group.'}6. The compound of claim 1 , wherein Ais selected from a phenyl group and a naphthyl group.7. The compound of claim 1 , wherein Ris hydrogen.8. The compound of claim 1 , wherein Land Lare each independently selected from —O— and a C-Calkylene group.10. The compound of claim 1 , wherein Rand Rare each the first cross-linking group.11. The compound of claim 1 , wherein X is —Br.19. An organic light-emitting device comprising:a first electrode;a second electrode; andan organic layer disposed between the first electrode and the second electrode,{'claim-ref': {'@idref': 'CLM-00013', 'claim 13'}, 'wherein the organic layer comprises an emission layer and at least one cross-linked material of .'}20. The organic light-emitting device of claim 19 , wherein the emission layer comprises the at least one cross-linked material. This application claims priority to and the benefit of Korean Patent Application No. 10-2015-0174155, filed on Dec. 8, 2015, in the Korean Intellectual Property Office, the content of which is incorporated herein in its entirety by reference.1. FieldThe present disclosure relates to a compound for an organic light-emitting device, a cross-linked material thereof, and an organic light-emitting device including the cross-linked material.2. Description of the Related ArtOrganic light-emitting devices (OLEDs) are self-emission devices that have wide viewing angles, high ...

Resin composition for flattened film or microlens

A thermosetting resin composition for a flattened film or a microlens including: a copolymer having structural units of the following Formulae (1) and (2), wherein R 0 s are each independently a hydrogen atom or a methyl group, R 1 is a single bond or a C 1-5 alkylene group, in which the alkylene group may have an ether bond in the main chain, and R 2 is an epoxy group or a C 5-12 organic group having an epoxy ring; and a solvent.

RESIN COMPOSITION, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT USING THE SAME, AND SEMICONDUCTOR DEVICE

Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1). 3. The resin composition according to claim 1 , wherein the resin (A2) has at least one of a polyethylene oxide structure and a polypropylene oxide structure.4. The resin composition according to claim 1 , further comprising (d) a thermally crosslinkable compound.5. The resin composition according to claim 1 , the resin composition being soluble in a solution having a weight ratio of dimethyl-sulfoxide/monoethanolamine=3/7 after heat-treated at 250° C. for 1 hour.6. A photoresist claim 1 , comprising the resin composition according to .7. A method for manufacturing a semiconductor element claim 1 , the method comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, '(1) forming a pattern of the resin composition according to on a substrate;'}(2) performing, at 150° C. or higher, at least one step selected from the group consisting of (a) doping the substrate with impurity ions, (b) etching the substrate, and (c) dry-forming a film on the substrate; and(3) peeling off the pattern.8. The method for manufacturing a semiconductor element according to claim 7 , wherein (a-1) a step of implanting ions into the substrate, or', '(a-2) a step of exposing, to a dopant, the substrate having the patterned resin film formed thereon., 'the step (a) is'}9. The method for manufacturing a semiconductor element according to claim 7 , wherein (b-1) a step of patterning the substrate by dry etching, or', '(b-2) a step of patterning the substrate by wet etching., 'the step ...

POLYMER COMPOSITIONS FOR SELF-ASSEMBLY APPLICATIONS

The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly. 2. The composition of which is capable of forming a cross-linked layer on a coated substrate upon heating at a temperature between about 220° C. and about 300° C. and is insoluble in both organic solvents and aqueous bases and capable of affecting self-assembly of the block domains of a block copolymer cast on top of it and annealed.6. The composition of where Ris selected from a group consisting of H and methyl claim 1 , and Ris H and G is a C-2 to C-5 alkylene moiety.7. The composition of where Ris H.8. The composition of where Ris methyl.9. The composition of where Ris H.10. The composition of where G is a C-2 to C-5 alkylene moiety.11. A pinning directing layer for polar aliphatic polymer block domains of a block copolymer overlying the directing layer formed by coating a composition of on a substrate and crosslinking it claim 1 , where this pinning layer has a total mole % of structure (1) and other (meth)acrylate derived repeat units equal or greater than about 60 mole % claim 1 , and further where the total mole % composition of repeat units in the random copolymer does not exceed 100 mole %.12. A pinning directing layer for polar aliphatic polymer block domains of a block copolymer overlying the directing layer formed by coating a composition of on a substrate and crosslinking it claim 4 , where this pinning layer has a total mole % of structure (1) claim 4 , and structure (2) equal or greater than about 60 mole % claim 4 , and further where the total mole % composition of repeat units in the random copolymer does not exceed 100 mole %.13. A pinning directing layer for aromatic polymer block domains ...

CYCLOPROPENIUM POLYMERS AND METHODS FOR MAKING THE SAME

The present invention provides, inter alia, a process for incorporating a cyclopropenium ion into a polymeric system. Processes for making cross-linked polymers, linear polymers, and dendritic polymers, as well as for incorporating a cyclopropenium ion onto a preformed polymer are also provided. Further provided are stable, polycationic compounds, various polymers that contain stable cyclopropenium cations, and substrates containing such polymers. The use of these polymers in water purification systems, antimicrobial coatings, ion-transport membranes, cell supports, drug delivery vehicles, and gene therapeutic vectors are also provided. 1. A process for incorporating a cyclopropenium ion into a polymeric system comprising contacting a functionalized cyclopropenium ion with a functionalized compound capable of reacting with the functional group of the cyclopropenium ion for a period of time and under conditions suitable for the functionalized cyclopropenium and the functionalized compound to react and form a polymeric system that comprises a stable cyclopropenium cation that remains positively charged at a high pH.2. The process according to claim 1 , wherein the polymeric system is selected from the group consisting of linear polymers claim 1 , branched polymers claim 1 , cross-linked polymers claim 1 , and dendritic polymers.11. The process according to claim 1 , wherein the functionalized compound capable of reacting with the functional group of the cyclopropenium ion is a polymer selected from the group consisting of a linear polymer claim 1 , a branched polymer claim 1 , a cross-linked polymer claim 1 , and a dendritic polymer.12. The process according to claim 11 , wherein the polymer is a homopolymer or a heteropolymer.13. The process according to claim 12 , wherein the heteropolymer is selected from the group consisting of a random copolymer claim 12 , a block copolymer claim 12 , and a graft copolymer.14. The process according to claim 11 , wherein the ...

SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

A salt is represented by formula (I). In formula (I), R, Rand Reach independently represent a halogen atom, a perfluoroalkyl group having 1 to 6 carbon atoms or a hydrocarbon group having 1 to 12 carbon atoms, and —CH— included in the hydrocarbon group may be replaced by —O— or —CO—, m1 represents an integer of 0 to 4, and when m1 is 2 or more, a plurality of Rmay be the same or different from each other, m2 represents an integer of 0 to 4, and when m2 is 2 or more, a plurality of Rmay be the same or different from each other, and m3 represents an integer of 0 to 4, and when m3 is 2 or more, a plurality of Rmay be the same or different from each other. 2. A quencher comprising the salt according to .3. A resist composition comprising the quencher according to claim 2 , a resin including a structural unit having an acid-labile group claim 2 , and an acid generator.7. The resist composition according to claim 3 , further comprising a salt generating an acid having an acidity lower than that of an acid generated from the acid generator.8. A method for producing a resist pattern claim 3 , which comprises:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, '(1) a step of applying the resist composition according to on a substrate,'}(2) a step of drying the applied composition to form a composition layer,(3) a step of exposing the composition layer,(4) a step of heating the exposed composition layer, and(5) a step of developing the heated composition layer. The present invention relates to a salt, a quencher and a resist composition which contain the salt, and a method for producing a resist pattern using the resist composition.Patent Document 1 mentions a resist composition including a salt of the following structural formula, a resin including a structural unit having an acid-labile group, and an acid generator.Patent Document 2 mentions a resist composition including a salt of the following structural formula, a resin including a structural unit having an acid-labile ...

ION EXCHANGE FILM, COMPOSITION FOR FORMING ION EXCHANGE FILM, AND PRODUCTION METHOD FOR ION EXCHANGE FILM

Provided is an ion exchange film including a resin which is disposed in pores of a porous support and made of a styrene-acryl copolymer having a structure expressed by General Formula (PI) or (PII) below, a composition for forming the film, and a production method therefor. 3. The ion exchange film according to claim 1 ,wherein a content of a component having a structure unit obtained from a styrene skeleton or having a styrene skeleton is 1 part by mass to 85 parts by mass in the case of General Formula (PI) above and 10 parts by mass to 90 parts by mass in the case of General Formula (PII) above with respect to 100 parts by mass of the polymer.4. The ion exchange film according to claim 1 ,wherein the polymer is crosslinked and cured by photoradical polymerization.5. The ion exchange film according to claim 1 ,wherein the porous support is a synthetic woven fabric, a synthetic nonwoven fabric, a sponge-shaped film, or a film having fine through holes.6. The ion exchange film according to claim 1 ,wherein the porous support is polyolefin.7. The ion exchange film according to claim 1 ,wherein a film thickness of the polymer resin is 40 μm to 500 μm.9. The composition for forming an ion exchange film according to claim 8 ,wherein a content of the compound having the styrene skeleton is 1 part by mass to 85 parts by mass in the case of the compound expressed by General Formula (MI-a) above and 10 parts by mass to 90 parts by mass in the case of the compound expressed by General Formula (MII-a) above with respect to 100 parts by mass of the total solid content of the composition.10. The composition for forming an ion exchange film according to claim 8 ,wherein solubility of all the compounds having the ethylenically unsaturated groups is 30% by mass or more with respect to pure water at 25° C.12. The composition for forming an ion exchange film according to claim 11 ,wherein a content of the photopolymerization initiator is 0.1 parts by mass to 20 parts by mass with ...

Partially Quaternized Styrene-Based Copolymer, Ionic-Conductivity Imparter, Catalytic Electrode Layer, Membrane/Electrode Assembly and Process for Producing Same, Gas Diffusion Electrode and Process for Producing Same, and Fuel Cell of Anion Exchange Membrane Type

A partially quaternized styrene-based polymer contains given amounts of a constituent unit having a quaternary salt type anion-exchange group and a constituent unit having a haloalkyl group. Due to the polymer, the ionic conductivity and the gas diffusion properties are kept high and the swelling of the electrode catalyst layer in a post-crosslinking step can be minimized to form a highly active catalytic electrode layer and obtain an excellent fuel-cell output. 2. An ion-conductive additive comprising the partially quaternized styrene-based copolymer as set forth in which is for a catalytic electrode layer used in an anion-exchange membrane type fuel cell.4. A membrane-electrode assembly for the anion-exchange membrane type fuel cell comprising the catalytic electrode layer for the anion-exchange membrane type fuel cell as set forth in .5. A gas diffusion electrode for the anion-exchange membrane type fuel cell comprising the catalytic electrode layer for the anion-exchange membrane type fuel cell as set forth in .6. An anion-exchange membrane type fuel cell comprising the membrane-electrode assembly for the anion-exchange membrane type fuel cell as set forth in .7. An anion-exchange membrane type fuel cell comprising the gas diffusion electrode for the anion-exchange membrane type fuel cell as set forth in .8. A production method of a membrane-electrode assembly for an anion-exchange membrane type fuel cell comprising:{'claim-ref': {'@idref': 'CLM-00002', 'claim 2'}, 'coating and drying a catalytic electrode forming composition comprising a catalyst and the ion-conductive additive for the catalytic electrode layer as set forth in , on an anion-exchange membrane or a precursor of the anion-exchange membrane to form a catalytic electrode precursor layer, and'}then carrying out a quaternization and crosslinking reaction by contacting with a polyamine compound.9. A production method of a gas diffusion electrode for an anion-exchange membrane type fuel cell comprising ...

PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE

There is provided a pattern forming method comprising, in order, (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having specific repeating units, (2) a step of exposing the film by using an electron beam or an extreme-ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern. 3. The pattern forming method as claimed in claim 1 ,wherein a content of the repeating unit represented by formula (A) is from 20 to 40 mol % based on all repeating units in the resin (Ab).4. The pattern forming method as claimed in claim 1 ,{'sub': '1', 'wherein in formula (Ab1), Lrepresents a hydrogen atom.'}5. The pattern forming method as claimed in claim 1 ,{'sub': '2', 'wherein in formula (Ab1), Rrepresents an alkyl group or a cycloalkyl group.'}6. The pattern forming method as claimed in claim 1 ,{'sub': '3', 'wherein in formula (Ab1), Rrepresents a hydrogen atom.'}7. The pattern forming method as claimed in claim 1 ,wherein in formula (Ab1), L represents a single bond, an aromatic ring group, a norbornane ring group or an adamantane ring group.9. The pattern forming method as claimed in claim 1 ,wherein the exposure is exposure to an electron beam or an extreme-ultraviolet ray.10. The pattern forming method as claimed in claim 1 ,wherein the actinic ray-sensitive or radiation-sensitive resin composition further contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation.11. An actinic ray-sensitive or radiation-sensitive resin composition used in the pattern forming method claimed in .12. A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition claimed in .13. A method for manufacturing an electronic device claim 1 , comprising the pattern forming method claimed in .14. An electronic device manufactured by the method for manufacturing an electronic ...

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS

A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 6. The negative resist composition of wherein the base polymer (B) further contains a polymer comprising recurring units having the formula (B1) and recurring units having the formula (B5) claim 4 , being free of recurring units having the formulae (a1) to (a6).7. The negative resist composition of claim 1 , further comprising (C) a crosslinker.8. The negative resist composition of claim 3 , which is free of a crosslinker.10. The negative resist composition of claim 1 , further comprising (E) an acid generator.11. A resist pattern forming process comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the negative resist composition of onto a processable substrate to form a resist film thereon,'}exposing the resist film patternwise to high-energy radiation, anddeveloping the resist film in an alkaline developer to form a resist pattern.12. The process of wherein the high-energy radiation is KrF excimer laser claim 11 , EUV or EB.13. The process of wherein the processable substrate is a photomask blank. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2016-255025 filed in Japan on Dec. 28, 2016, the entire contents of which are hereby incorporated by reference.This invention relates to a chemically amplified negative resist composition and a resist pattern forming process using the same.To meet the recent demand for higher integration in integrated circuits, pattern formation to a finer feature size is required. Acid-catalyzed chemically amplified resist compositions are most often used in forming resist patterns with a feature size of 0.2 μm or less. High-energy radiation such as UV, deep-UV or EB is used as the light source for exposure of these resist compositions. ...

POLYMER NONWOVEN NANOWEB HAVING IONIC FUNCTIONAL GROUP AND RESPIRATOR MASK COMPRISING THE SAME

Polymer nonwoven nanoweb containing ionic functional group and respiratory mask including the same are provided. The polymeric nonwoven web comprises polymer fibers having a diameter in the nanometer range and having a polymer with an ionic functional group in its main chain or side chain. The ionic functional group may be a sulfonate group, an ammonium group, an azanide group, a phosphonate group, a phosphate group, or a zwitterion group having two of these ionic functional groups linked. The polymeric nonwoven web may further comprise a counter ion having a charge of opposite sign to the charge of the ionic functional group, such as Ag or I. 1. A polymeric nonwoven web comprising:polymer fibers having a diameter in the nanometer range and having a polymer with an ionic functional group in its main chain or side chain.2. The polymeric nonwoven web of claim 1 ,wherein the ionic functional group includes a sulfonate group, an ammonium group, an azanide group, a phosphate group, or a zwitterion group having two of these linked.3. The polymeric nonwoven web of claim 2 ,wherein the ammonium group is a quaternary ammonium group.4. The polymeric nonwoven web of claim 2 ,wherein the ionic functional group including the azanide group is a sulfadiazinyl group.5. The polymeric nonwoven web of claim 2 ,wherein the ionic functional group including the zwitterion group is a phosphorylcholine group.6. The polymeric nonwoven web of claim 1 , further comprising:{'sup': +', '−, 'Agor I as a counter ion having a charge of opposite sign to the charge of the ionic functional group.'}7. The polymeric nonwoven web of claim 1 ,wherein the polymer is polystyrene, polymethyl methacrylate, polyarylene ether, polyurethane or a copolymer of two or more thereof.8. The polymeric nonwoven web of claim 1 ,wherein the polymer is a copolymer of a monomer unit having the ionic functional group and a monomer unit having no ionic functional group.9. The polymeric nonwoven web of claim 8 ,wherein the ...

CROSSLINKED SYNTHETIC POLYMER-BASED RESERVOIR DRILLING FLUID

A wellbore fluid includes a base fluid; and a crosslinked and branched polymeric fluid loss control agent formed from at least an acrylamide monomer and a sulfonated anionic monomer; wherein the fluid loss control agent has an extent of crosslinking that is selected so that the fluid loss control agent has a viscosity that is within a peak viscosity response of the viscosity response curve. 1. A wellbore fluid , comprising:a base fluid; anda crosslinked and branched polymeric fluid loss control agent formed from at least an acrylamide monomer and a sulfonated anionic monomer;wherein the fluid loss control agent has an extent of crosslinking that is selected so that the fluid loss control agent has a viscosity that is within a peak viscosity response of the viscosity response curve.2. The wellbore fluid of claim 1 , wherein the acrylamide monomer is at least one selected from unsubstituted acrylamide claim 1 , alkylacrylamides claim 1 , N-methylol acrylamide claim 1 , N-isopropyl acrylamide claim 1 , diacetone-acrylamide claim 1 , N-alkyl acrylamide claim 1 , where alkyl is Cto C claim 1 , N claim 1 ,N-dialkyl acrylamides claim 1 , where alkyl is Cto C claim 1 , N-cycloalkane acrylamides.3. The wellbore fluid of claim 1 , wherein the sulfonated anionic monomer is selected from 2-acrylamide-2-methyl-propanesulfonic acid claim 1 , vinyl sulfonate claim 1 , and styrene sulfonic acid.4. The wellbore fluid of claim 1 , wherein the fluid loss control agent contains covalent intermolecular crosslinking.5. The wellbore fluid of claim 1 , wherein the wellbore fluid exhibits temperature stability up to 300° F.6. The wellbore fluid of claim 1 , wherein the wellbore fluid exhibits low end rheology that does not deviate by more than 30 percent under a temperature up to 300° F. when compared to low end rheology of the fluid at temperatures below about 250° F.7. The wellbore fluid of claim 1 , wherein after aging the wellbore fluid for at least 5 days at a temperature of at least ...

Compositions and methods for treating hyperkalemia

The present invention is directed to compositions and methods of removing potassium or treating hyperkalemia by administering pharmaceutical compositions of cation exchange polymers with low crosslinking for improved potassium excretion and for beneficial physical properties to increase patient compliance.

PATTERN FORMING METHOD, ETCHING METHOD AND METHOD FOR PRODUCING CAPACITANCE-TYPE INPUT DEVICE

A pattern forming method includes forming a photosensitive resin composition layer on at least one surface of a substrate using a photosensitive transfer material, exposing the photosensitive resin composition layer; and developing the exposed photosensitive resin composition layer, in which the photosensitive transfer material includes a support, a thermoplastic resin layer, and a photosensitive resin composition layer in this order, and the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B). 1. A pattern forming method comprising:forming a photosensitive resin composition layer on at least one surface of a substrate using a photosensitive transfer material;exposing the photosensitive resin composition layer; and wherein:', 'the photosensitive transfer material comprises a support, a thermoplastic resin layer, and a photosensitive resin composition layer in this order, and', 'the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group, and a photoacid generator (B)., 'developing the exposed photosensitive resin composition layer,'}2. The pattern forming method according to claim 1 , further comprising:post-baking a pattern of the photosensitive resin composition layer formed by developing.3. The pattern forming method according to claim 1 ,wherein the photosensitive resin composition layer consists of one layer.4. The pattern forming method according to claim 1 ,wherein the constituent unit (a1) that includes the group in which the acid group is protected by the acid-decomposable group is a constituent unit that includes a group in which a carboxy group or a phenolic hydroxyl group is acetal-protected.5. The pattern forming ...

POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

A positive resist composition comprising a base polymer comprising recurring units having a nitrogen-containing tertiary ester structure exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development. 1. A positive resist composition comprising a base polymer comprising recurring units having a carboxyl group in which the hydrogen is substituted by a nitrogen-containing tertiary hydrocarbon group.2. The positive resist composition of wherein the nitrogen-containing tertiary hydrocarbon group is a nitrogen-containing tertiary cyclic hydrocarbon group.4. The positive resist composition of wherein the base polymer further comprises recurring units having a carboxyl group in which the hydrogen is substituted by an acid labile group and/or recurring units having a phenolic hydroxyl group in which the hydrogen is substituted by an acid labile group.6. The positive resist composition of wherein the base polymer further comprises recurring units containing an adhesive group selected from the group consisting of hydroxyl claim 1 , carboxyl claim 1 , lactone ring claim 1 , carbonate claim 1 , thiocarbonate claim 1 , carbonyl claim 1 , cyclic acetal claim 1 , ether bond claim 1 , ester bond claim 1 , sulfonic ester bond claim 1 , cyano claim 1 , amide claim 1 , —O—C(═O)—S— claim 1 , and —O—C(═O)—NH—.8. The positive resist composition of claim 1 , further comprising an acid generator.9. The positive resist composition of claim 1 , further comprising an organic solvent.10. The positive resist composition of claim 1 , further comprising a quencher.11. The positive resist composition of claim 1 , further comprising a surfactant.12. A pattern forming process comprising the steps of applying the positive resist composition of to form a resist film on a substrate claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a ...

PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS

A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R—C(O)O—R, wherein Ris a C3-C6 alkyl group and Ris a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices. 110-. (canceled)11. A photoresist pattern overcoat composition , comprising: a matrix polymer comprising a repeat unit comprising a —C(CF)OH group and/or a repeat unit comprising an acid group; and an organic solvent comprising one or more ester solvents , wherein the ester solvent is of the formula R—C(O)O—R , wherein Ris a C3-C6 alkyl group and Ris a C5-C10 alkyl group.12. The photoresist pattern overcoat composition of claim 11 , wherein the ester solvent is isoamyl isobutyrate.13. (canceled)14. The photoresist pattern overcoat composition of claim 11 , further comprising a monoether solvent.15. The photoresist pattern overcoat composition of claim 11 , further comprising an alcohol solvent.16. The photoresist pattern overcoat composition of claim 11 , wherein the matrix polymer comprises a repeat unit comprising a —C(CF)OH group.17. The photoresist pattern overcoat composition of claim 11 , wherein the matrix polymer comprises a repeat unit comprising an acid group.18. The photoresist pattern overcoat composition of claim 11 , wherein the pattern overcoat composition is free of non-polymeric ...

POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND

The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition. 9. A negative resist composition comprising the polymer compound according to .10. A negative resist composition comprising the polymer compound according to .11. A negative resist composition comprising the polymer compound according to .12. A negative resist composition comprising the polymer compound according to .13. The negative resist composition according to claim 9 , further comprising a compound capable of generating acid by irradiation with a high energy beam.15. A laminate comprising a resist film formed from the negative resist composition according to on a photomask blank.16. A patterning process comprising the steps of: forming a resist film from the negative resist composition according to on a substrate to be processed; pattern-irradiating the resist film with a high energy beam; and developing the resist film with an alkaline developer to form a resist pattern.17. The patterning process according to claim 16 , wherein the high energy beam is an EUV or an electron beam.18. The patterning process according to claim 16 , wherein the substrate to be processed is a photomask blank.19. The patterning process according to claim 18 , wherein an outermost surface of the photomask blank is formed of a chromium material. Field of the InventionThe present invention relates to a polymer compound and a negative resist composition, particularly a negative resist composition using a polymer compound that has a polarity inversion function used for processing a semiconductor substrate or a photomask substrate, and also relates to a laminate and a patterning ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition including a resin component whose solubility in a developing solution is changed due to the action of the acid, in which the resin component has a constitutional unit derived from a compound represented by Formula (a0-1) and a constitutional unit containing an acid decomposable group whose polarity is increased due to the action of the acid. In the formula, W represents a polymerizable group-containing group, Yarepresents a carbon atom, Xarepresents a group that forms a monocyclic aliphatic hydrocarbon group together with Ya, some or all hydrogen atoms in the monocyclic aliphatic hydrocarbon group may be substituted with substituents, and Rarepresents an aromatic hydrocarbon group which may have a substituent. 2. The resist composition according to claim 1 , wherein a ratio (molar ratio) of the constitutional unit (a0) to the constitutional unit (a1) (constitutional unit (a0)/constitutional unit (a1)) is in a range of 8/2 to 1/9.3. The resist composition according to claim 1 , wherein a total content of the constitutional unit (a0) and the constitutional unit (a1) in the resin component (A1) is in a range of 20% to 80% by mole with respect to all constitutional units (100% by mole) constituting the resin component (A1).5. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film on a support using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern.6. The method of forming a resist pattern according to claim 5 , wherein claim 5 , in exposing the resist film claim 5 , the resist film is exposed to extreme ultraviolet rays (EUV) or electron beams (EB). The present invention relates to a resist composition and a method of forming a resist pattern.Priority is claimed on Japanese Patent Application No. 2017-254665, filed on Dec. 28, 2017, the content of which is incorporated herein by reference.In ...

CYCLOPROPENIUM POLYMERS AND METHODS FOR MAKING THE SAME

The present invention provides, inter alia, a process for incorporating a cyclopropenium ion into a polymeric system. Processes for making cross-linked polymers, linear polymers, and dendritic polymers, as well as for incorporating a cyclopropenium ion onto a preformed polymer are also provided. Further provided are stable, polycationic compounds, various polymers that contain stable cyclopropenium cations, and substrates containing such polymers. The use of these polymers in water purification systems, antimicrobial coatings, ion-transport membranes, cell supports, drug delivery vehicles, and gene therapeutic vectors are also provided. 136-. (canceled)37. A stable , polycationic compound made by a process for incorporating a cyclopropenium ion into a polymeric system comprising contacting a functionalized cyclopropenium ion with a functionalized compound capable of reacting with the functional group of the cyclopropenium ion for a period of time and under conditions suitable for the functionalized cyclopropenium and the functionalized compound to react and form a polymeric system that comprises a stable cyclopropenium cation that remains positively charged at a high pH.39. The polymer according to claim 38 , wherein the polymer is selected from the group consisting of a linear polymer claim 38 , a branched polymer claim 38 , a cross-linked polymer claim 38 , and a dendritic polymer.40. The polymer according to claim 38 , wherein the polymer is a homopolymer or a heteropolymer.41. The polymer according to claim 38 , wherein the heteropolymer is selected from the group consisting of a random copolymer claim 38 , a block copolymer claim 38 , and a graft copolymer.42. The polymer according to claim 38 , wherein the polymer backbone is selected from the group consisting of ethylene claim 38 , propylene claim 38 , styrene claim 38 , (meth)acrylate claim 38 , vinyl chloride claim 38 , urethane claim 38 , ethylene terephthalate claim 38 , ester claim 38 , amide claim 38 , ...

POLYMER COMPOUND, FILM OBTAINED BY HARDENING THIS POLYMER COMPOUND AND ELECTRONIC DEVICE COMPRISING THIS FILM

A polymer compound comprising 2. The polymer compound according to claim 1 , wherein the content of said repeating unit represented by the formula (1) is 40% by mol or more when the total content of all repeating units contained in said polymer compound is taken as 100% by mol.6. A composition comprising the polymer compound according to and an organic solvent.7. A film obtained by hardening the polymer compound according to .8. An electronic device comprising the film according to .9. An organic thin film transistor comprising the film according to as a gate insulation layer. The present invention relates to a polymer compound, a film obtained by hardening the polymer compound and an electronic device comprising the film.As a driving device for driving a luminous device such as an organic electroluminescent device (organic EL device), an organic thin film field effect transistor (organic thin film transistor) in which voltage applied to a gate electrode (gate voltage) acts on an organic semiconductor layer via a gate insulating layer to control ON/OFF of a drain current is attracting attention.For example, the following Patent Document 1 describes an organic thin film field effect transistor having a gate insulation layer formed by using a resin composition containing (A) a polymer compound containing a repeating unit containing a fluorine atom and a repeating unit containing a functional group generating a second functional group reacting with active hydrogen by the action of electromagnetic wave or heat, and (B) at least one compound selected from the group consisting of a low molecular compound containing two or more active hydrogen atoms in the molecule and a polymer compound containing two or more active hydrogen atoms in the molecule; a gate electrode and an organic semiconductor layer.Patent Document 1: Japanese Unexamined Patent Application Publication No. 2011-38062In recent years, it has been demanded to further improve the carrier mobility of an organic ...

TRANSPARENT GRAFT COPOLYMERS BASED ON ACRYLATE SOFT PHASES

The invention relates to graft copolymers—based on non-cross-linked acrylate soft phases from which styrenic monomers are grafted—with a defined micro-structure, having a high transparency, toughness and weather resistance (UV-stability), a process for their preparation and their use, and also to polymer blends comprising said graft copolymers and styrenic polymers, and shaped articles produced therefrom and their use. 120-. (canceled)22. The graft copolymer B according to having a transmittance T of at least 75% (determined according to ASTM D1003) and a haze coefficient below 10% (determined according to ASTM D1003-95).23. The graft copolymer B according to claim 21 , wherein monomer B11 is ethyl acrylate claim 21 , 2-ethylhexyl acrylate claim 21 , n-butyl acrylate claim 21 , or mixtures thereof.24. The graft copolymer B according to claim 21 , wherein monomer B12 of the formula (I) is hydroxyethyl acrylate (HEA) claim 21 , glycidyl methacrylate (GMA) claim 21 , (2-hydroxyethyl) methacrylate (HEMA) claim 21 , or hydroxypropylmethacrylate.25. The graft copolymer B according to claim 21 , wherein monomer B21 is styrene claim 21 , α-methylstyrene claim 21 , or a mixture of styrene or α-methylstyrene with methyl methacrylate.26. The graft copolymer B according to claim 21 , wherein comonomer B22 is maleic anhydride or acrylonitrile.27. The graft copolymer B according to claim 21 , wherein polymer B2 has been built up from styrene claim 21 , or from a mixture consisting of 65 to 85 wt.-% styrene and 15 to 35 wt.-% acrylonitrile claim 21 , maleic anhydride claim 21 , or methyl methacrylate.28. The graft copolymer B according to claim 21 , wherein monomer B13 is not present.29. The graft copolymer B according to built up from:(B1) 20 to 40 wt.-% of graft substrate polymer B1; and(B2) 60 to 80 wt.-% of polymer B2.31. The process according to claim 30 , wherein in step i) the chain transfer agent is added stepwise in two or more portions.32. The process according to claim ...

POLYMER COMPOUND, METHOD FOR PREPARING MODIFIED AND CONJUGATED DIENE-BASED POLYMER USING THE SAME, AND MODIFIED AND CONJUGATED DIENE-BASED POLYMER

The present invention relates to a polymer compound used as a polymer modifier, a conjugated diene-based polymer including a functional group derived therefrom, and a method for preparing a modified and conjugated diene-based polymer using the polymer compound. A rubber modifier compound obtained therefrom is used as a modifier for rubber, particularly, as a modifier of a conjugated diene-based polymer and is bonded to a chain of the conjugated diene-based polymer to easily introduce a functional group having affinity with a filler. 2. The polymer compound of claim 1 , wherein in Formula 1 claim 1 ,{'sub': 1', '1-10, 'Xis Calkyl, ester or alkylaryl substituted with halogen.'}3. The polymer compound of claim 1 , wherein in Formula 1 claim 1 ,{'sub': 2', '6-10', '1-3', '3-10, 'Xis Caryl unsubstituted or substituted with Calkyl or Ccycloalkyl.'}7. The polymer compound of claim 1 , wherein the polymer compound is a modifier for a conjugated diene-based polymer.10. The modified and conjugated diene-based polymer of claim 8 , wherein the polymer comprises from 100 ppm to 10 claim 8 ,000 ppm of a silane group based on a total amount of the polymer.11. The modified and conjugated diene-based polymer of claim 8 , wherein the polymer comprises 40 wt % or less of a derived unit from an aromatic vinyl-based monomer.12. The modified and conjugated diene-based polymer of claim 8 , wherein the polymer has a number average molecular weight of 10 claim 8 ,000 g/mol to 1 claim 8 ,000 claim 8 ,000 g/mol.15. The method for preparing the modified and conjugated diene-based polymer of claim 13 , wherein the organo-alkali metal compound is used in a molar ratio of 0.01 mmol to 10 mmol based on 100 g of a total of the monomers.16. The method for preparing the modified and conjugated diene-based polymer of claim 13 , wherein the polymerizing in step 1) is conducted by further adding a polar additive.17. The method for preparing the modified and conjugated diene-based polymer of claim 16 , ...

BIO-ELECTRODE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING THE BIO-ELECTRODE, AND POLYMER COMPOUND

The present invention provides a bio-electrode composition capable of forming a living body contact layer for a bio-electrode that is excellent in conductivity and biocompatibility, is light-weight, can be manufactured at low cost, and can control significant reduction in conductivity even though the bio-electrode is soaked in water or dried. The present invention is accomplished by a bio-electrode composition including an (A) ionic material and a (B) resin other than the component (A), in which the component (A) has both a repeating unit “a” of a sodium salt, a potassium salt, or an ammonium salt including a partial structure represented by the following general formula (1) and a repeating unit “b” having a silicon atom. 1. A bio-electrode composition comprising an (A) ionic material and a (B) resin other than the component (A) , wherein [{'br': None, 'sup': 1', '−', '+, 'sub': 2', '2', '1, '—R—SO—N—SO—RfM\u2003\u2003(1)'}, {'sup': 1', '+, 'sub': '1', 'wherein, Rrepresents a single bond, or a linear, a branched, or a cyclic divalent hydrocarbon group having 1 to 40 carbon atoms, which may be substituted by a heteroatom, or mediated by a heteroatom; Rfrepresents a linear or a branched alkyl group or a phenyl group having 1 to 4 carbon atoms, having one or more fluorine atoms or a trifluoromethyl group; M represents any of a sodium ion, a potassium ion, or an ammonium ion.'}], 'the component (A) has both a repeating unit “a” of a sodium salt, a potassium salt, or an ammonium salt of sulfonimide having a partial structure represented by the following general formula (1) and a repeating unit “b” having a silicon atom,'}9. The bio-electrode composition according to claim 1 , wherein the component (B) comprises a silicone resin having a RSiOunit claim 1 , wherein R represents a substituted or an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms claim 1 , and x represents a number of 2.5 to 3.5 claim 1 , and a SiOunit claim 1 , diorganosiloxane having ...

Polymer, resist composition, and pattern forming process

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm 2 . The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.

RESIN COMPOSITION FOR FORMING COLOR FILTER UNDERLAYER FILM

There is provided a resin composition for forming a color filter underlayer film that can form a cured film having excellent solvent resistance, heat resistance, and transparency and can reduce generation of the color resist residue at the time of formation of a color filter on the cured film. The resin composition for forming a color filter underlayer film comprising: a homopolymer or a copolymer having a structure unit of Formula (1); an acid compound; a solvent; and a crosslinking agent in an amount of 0% by mass to 35% by mass based on a content of a solid content of the resin composition: 2. The resin composition for forming a color filter underlayer film according to claim 1 , wherein the copolymer further has a structure unit other than the structure unit of Formula (1).3. The resin composition for forming a color filter underlayer film according to claim 1 , wherein a content of the structure unit of Formula (1) in the copolymer is 17% by mass to 100% by mass.4. The resin composition for forming a color filter underlayer film according to claim 1 , wherein the acid compound is a sulfonic acid compound claim 1 , a carboxylic acid compound claim 1 , a sulfonic acid ester-based thermal acid generator claim 1 , or an organic onium salt-based thermal acid generator.5. The resin composition for forming a color filter underlayer film according to claim 1 , wherein the content of the crosslinking agent is 1% by mass to 30% by mass based on a content of a solid content in the resin composition for forming a color filter underlayer film.6. The resin composition for forming a color filter underlayer film according to claim 1 , further comprising a surfactant.7. A color filter underlayer film obtained from the resin composition for forming a color filter underlayer film as claimed in .8. A planarization film obtained from the resin composition for forming a color filter underlayer film as claimed in .9. A method for forming a color filter comprising the steps of:{'claim ...

HIGH-PURITY SODIUM P-STYRENESULFONATE WITH EXCELLENT HUE, METHOD FOR PRODUCING THE SAME, POLY (SODIUM P-STYRENESULFONATE) WITH EXCELLENT HUE USING THE SAME, AND DISPERSANT AND SYNTHETIC STARCH FOR CLOTHING FINISHING USING THE POLY ( SODIUM P-STYRENESULFONATE)

Provided are high purity sodium p-styrenesulfonate with an excellent hue which is useful as a reactive emulsifier or dispersant for producing a polymer emulsion, or synthetic starch for clothing ironing and poly(sodium p-styrene-sulfonate) with an excellent hue using the same or sodium p-styrenesulfonate improved in fluidity while keeping good solubility. 1. High-purity sodium p-styrenesulfonate with an excellent hue , in which the iron content in sodium p-styrenesulfonate is less than 3.00 μg/g , the sodium bromide content is less than 2.50 wt % , and the peak area ratios of (a) sodium o-styrenesulfonate , (b) sodium p-β-bromoethylbenzenesulfonate , (c) sodium m-styrenesulfonate , (d) sodium bromostyrenesulfonate and (e) sodium p-β-hydroxyethylbenzenesulfonate , which are determined by high-performance liquid chromatography (HPLC) , are (a) ≦0.40% , (b) ≦4.00% , (c)≦8.00% , (d) ≦0.10% and (e) ≦0.80% , respectively (provided that the sum of peak areas of sodium p-styrenesulfonate and (a) to (e) is 100).2. High-purity sodium p-styrenesulfonate with an excellent hue according to claim 1 , wherein the iron content in sodium p-styrenesulfonate is less than 3.00 μg/g claim 1 , the sodium bromide content is less than 2.50 wt % claim 1 , and the peak area ratios of (a) sodium o-styrenesulfonate claim 1 , (b) sodium p-β-bromoethylbenzenesulfonate claim 1 , (c) sodium m-styrenesulfonate claim 1 , (d) sodium bromostyrenesulfonate and (e) sodium p-β-hydroxyethylbenzenesulfonate claim 1 , which are determined by high-performance liquid chromatography (HPLC) claim 1 , are (a) ≦0.20% claim 1 , (b) ≦0.50% claim 1 , (c) ≦3.00% claim 1 , (d) ≦0.10% and (e) ≦0.20% claim 1 , respectively (provided that the sum of peak areas of sodium p-styrenesulfonate and (a) to (e) is 100).3. High-purity sodium p-styrenesulfonate with an excellent hue according to claim 1 , which is composed of particles having a median diameter measured with a laser diffraction/scattering particle size analyzer of ...

Use of thianthrene-containing polymers as a charge store

The present invention relates to the use of a thianthrene-containing polymer as redox-active electrode material, for example as an electrode slurry, for electrical charge storage means, especially secondary batteries, It additionally also relates to the electrode material comprising the polymer, and to an electrode and an electrical charge storage means comprising the polymer,

Hydroxyl group-containing methylstyrene and polymers incorporating same

Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing α-methylstyrene functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Hydroxyaryl Functionalized Polymers

Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers. 1. A method of making a functionalized polymer that comprises polyene mer and a terminal functional group , said method comprisinga) providing a solution that comprises an initiator or a catalyst system and one or more types of ethylenically unsaturated monomers which include at least one type of polyene;b) allowing said one or more types of ethylenically unsaturated monomers to polymerize, thereby providing a terminally active polymer; (1) a functional group that is reactive toward a terminally active polymer, and', '(2) an aryl group having at least two directly bonded OR groups where each R is a hydrolyzable t-butyldimethylsiloxyl protecting group,, 'c) reacting said terminally active polymer with a functionalizing compound that comprises'}thereby providing said functionalized polymer; andd) optionally, introducing to said functionalized polymer an active hydrogen atom-containing compound, thereby hydrolyzing each of said OR groups.2. The method of wherein said initiator or catalyst is an alkali metal-containing initiating compound and wherein said terminally active polymer is carbanionic.3. The method of wherein said one or more types of ethylenically unsaturated monomers further comprises at least one type of vinyl aromatic compound.4. The method of wherein said alkali metal-containing initiating compound comprises a functional group.5. The method of wherein said alkali metal-containing initiating compound is defined by the formula RZQ-M wherein M is an alkali metal atom; Ris an aryl group that comprises at least one ORsubstituent in which each Ris a group that is non-reactive toward M and ...

COPPER-CONTAINING ARTICLES

A water-soluble composition includes reducible copper ions or copper nanoparticles complexed with a reactive polymer. The reactive polymer can be crosslinked using suitable irradiation to provide copper-containing water-insoluble complexes. The water-soluble composition can be used to provide various articles and electrically-conductive materials that can be assembled in electronic devices. The reactive polymer has greater than 1 mol % of recurring units comprising sulfonic acid or sulfonate groups, at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition, and optionally at least 1 mol % of recurring units comprising a pendant amide, amine, hydroxyl, lactam, phosphonic acid, or carboxylic acid group. 1. A copper-containing article comprising a substrate and having disposed thereon a copper-containing composition comprising a water-soluble complex of a reactive polymer with reducible copper ions or copper nanoparticles , the reactive polymer comprising: (a) greater than 1 mol % of recurring units comprising sulfonic acid or sulfonate groups , (b) at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition , and optionally (c) at least 1 mol % of recurring units comprising a pendant amide , amine , hydroxyl , lactam , phosphonic acid , or carboxylic acid group , all amounts based on the total recurring units in the reactive polymer.2. The copper-containing article of claim 1 , wherein the reactive polymer comprises:(i-a) at least 5 mol % and up to and including 50 mol % of the recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition, based on the total recurring units in the reactive polymer,(i-b) at least 1 mol % and up to and including 93 mol % of recurring units comprising a pendant hydroxyl, amide, or carboxylic acid group, based on the total recurring units in the reactive polymer, orboth (i-a) and (i-b).3. The ...

Charge Transporting Semi-Conducting Material and Electronic Device Comprising It

The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include 2. Charge transporting semi-conducting material according to claim 1 , wherein the average number of azide and/or acetylenic groups per molecule in each the first precursor charge transporting polymer claim 1 , the second precursor charge transporting polymer and the crosslinking agent is greater than 2.3. Charge transporting semi-conducting material according to claim 1 , wherein claim 1 , in the pending side group claim 1 , the conjugated system of delocalized electrons is comprised in a carbocyclic or heterocyclic structural moiety.4. Charge transporting semi-conducting material according to claim 3 , wherein the conjugated system of delocalized electrons comprised in the carbocyclic or heterocyclic structural moiety is aromatic.5. Charge transporting semi-conducting material according to claim 4 , wherein the pending side group comprises at least two rings which are independently selected from aromatic and heteroaromatic rings.6. Charge transporting semi-conducting material according to claim 1 , wherein the pending side group comprises at least one trivalent nitrogen atom.7. Charge transporting semi-conducting material according to claim 6 , wherein the trivalent nitrogen atom is substituted with three carbocyclic or heterocyclic rings which are independently selected from aromatic and heteroaromatic rings.9. Charge transporting semi-conducting material according to claim 1 , wherein the electrical dopant is a p-dopant.10. Charge transporting semi-conducting material according to claim 1 , wherein the electrical dopant is selected from [3]-radialene compounds claim 1 , wherein each bridgehead carbon atom is substituted by a nitrile group claim 1 , C-Cperfluorinated aryl or C-Cperfluorinated heteroaryl claim 1 , wherein up to three fluorine atoms in the perfluorinated substituents may optionally be replaced by groups ...

Aqueous binder for lithium ion battery, preparation method therefor and use thereof

An aqueous binder for a lithium ion battery, a preparation method and a use thereof. The binder is an inorganic-organic composite emulsion, comprising a dispersing agent, inorganic nanoparticles, (methyl)acrylate monomers, unsaturated carboxylic acid monomers, vinyl hydrocarbon monomers and optionally copolymers of other copolymerizable monomers, wherein the dispersing agent is a water-soluble cellulose grafted amphiphilic copolymer. When the water-soluble cellulose grafted amphiphilic copolymer is used as the dispersing agent, the agglomeration of the nanoparticles when the binder is formed into a film can be avoided, and at the same time, the effects of toughening and improving the binding strength can be achieved. Meanwhile, the water-soluble cellulose has certain strengthening and toughening properties so that the aqueous binder has an excellent anti-tensile performance. The aqueous binder for a lithium ion battery can be used for lithium ion batteries.

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive resin composition includes a polymer component having first, second and third structural units, and a radiation-sensitive acid generating component including first and second radiation-sensitive acid generating agents. The first structural unit includes a group represented by formula (1). The second structural unit includes a hydroxyl group bonded to an aromatic ring. The third structural unit includes an acid-labile group. A sulfonic acid generated by the first acid generating agent includes a carbon atom that is adjacent to a sulfo group, and a fluorine atom or monovalent fluorinated hydrocarbon group bonded to the carbon atom. A sulfonic acid generated by the second acid generating agent includes a carbon atom that is adjacent to a sulfo group, and a carbon atom that is adjacent to the carbon atom, wherein neither a fluorine atom nor a monovalent fluorinated hydrocarbon group is bonded to the carbon atoms. 4. The radiation-sensitive resin composition according to claim 1 , further comprising an acid diffusion control agent.5. The radiation-sensitive resin composition according to claim 1 , further comprising a polymer claim 1 , wherein a percentage content by mass of fluorine atoms in the polymer is greater than a percentage content by mass of fluorine atoms in the polymer component.6. The radiation-sensitive resin composition according to claim 1 , wherein a content of the polymer component in terms of solid content equivalent in the radiation-sensitive resin composition is no less than 50% by mass.7. The radiation-sensitive resin composition according to claim 1 , wherein a proportion of the second structural unit contained with respect to total structural units constituting the polymer component is no less than 20 mol % and no greater than 70 mol %.8. The radiation-sensitive resin composition according to claim 1 , wherein a proportion of the first structural unit contained with respect to total structural units constituting the polymer ...

METHOD FOR PRODUCING A POLYMER BY NITROXYL-CONTROLLED POLYMERISATION, AND POLYMER

The invention relates to a method for producing a polymer by means of nitroxyl-controlled polymerisation. According to the invention, a mixture is initiated which contains at least one radically polymerisable monomer and additionally contains at least one initiator, at least one reactive agent that converts at least one portion of the alkoxyamine end groups produced during the radical polymerisation into a non-polymerisable group, and at least one additive that accelerates the hydroxyl-controlled polymerisation and/or the conversion of the alkoxyamine end groups into a non-polymerisable group. 121-. (canceled)22. A process for preparing a polymer by nitroxyl-controlled polymerization , comprising the following steps: i) at least one monomer A1 polymerizable by radical polymerization, or a monomer mixture comprising the at least one monomer A1 and also at least one further monomer A2, capable of radical polymerization and different from the monomer A1, and', 'ii) at least one initiator B selected from the group consisting of an alkoxyamine B 1 which initiates the radical polymerization by cleaving into an alkyl radical and a nitroxyl radical and an initiator B2 which comprises at least one radical initiator and at least one nitroxyl radical,, 'a) providing a mixture susceptible to radical polymerization, comprisingb) initiating the radical polymerization and maintaining the polymerization over a time period which allows polymerization to a conversion of 10 to 100%,c) adding at least one reactive agent C after a polymerization conversion of between 10% and 100%, in an amount which converts at least a portion or the entirety of the alkoxyamine end groups of the polymer generated in the nitroxyl-controlled radical polymerization into a non-polymerizable group, andd) adding, to one or more of steps a) to c), at least one additive D which accelerates the nitroxyl-controlled polymerization reaction and/or the conversion of the alkoxyamine end groups of the polymer into a ...

Polymerizable monomer, polymer compound for conductive polymer, and method for producing the polymer compound

Polymerization reaction is performed using a polymerizable monomer shown by the following general formula (1) and at least one monomer selected from monomers each having a structure of a salt among a lithium salt, a sodium salt, a potassium salt, and a nitrogen compound salt of a fluorosulfonic acid or the like; then, the structure of the salt of the repeating unit of a polymer obtained by the polymerization reaction is changed to the fluorosulfonic acid or the like by ion exchange. Thus, the present invention provides a polymer compound for a conductive polymer and a method for producing the polymer compound which is suitably used as a dopant for a fuel cell and a conductive material, and which is a copolymer containing a repeating unit of styrene having a 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylisobutyl ether group, and a repeating unit having any of a fluorosulfonic acid, a fluorosulfonimide group, and a n-carbonyl-fluoro-sulfonamide group.

[BIS(TRIHYDROCARBYLSILYL)AMINOSILYL]-FUNCTIONALIZED STYRENE AND A METHOD FOR ITS PREPARATION

The invention relates to [bis(trihydrocarbylsilyl)aminosilyl]-functionalized styrene and a method for its preparation. The invention further relates to the use of the styrene derivative in the preparation of a copolymer thereof. The styrene derivative is preferably used as comonomer in the production of elastomeric copolymers. Alternatively, or additionally, it is used in the preparation of a polymerization initiator. 3. The styrene derivative of claim 1 , wherein Ris selected from the group consisting of:a) a single bond; and{'sub': 2', 'n, 'b) —(CH)—, wherein n represents an integer from 1 to 12, preferably wherein n is 1 or 2, in particular wherein n is 1.'}4. The styrene derivative of claim 3 , wherein Ris —(CH)— claim 3 , wherein n represents an integer from 1 to 5 claim 3 , preferably wherein n represents an integer from 1 to 3 claim 3 , in particular wherein n is 1.5. The styrene derivative of claim 1 , wherein Rand Rcan be the same or different and represent CHor CH claim 1 ,{'sup': 2', '3, 'sub': '3', 'preferably wherein Rand Rrepresent CH.'}8. The method of claim 7 , wherein the reaction is performed in an organic solvent in an inert gas atmosphere claim 7 ,preferably wherein the reaction is performed in an aliphatic or cyclic ether solvent,in particular wherein the solvent is tetrahydrofuran (THF).9. Use of the styrene derivative of claim 1 , in the preparation of a copolymer thereof.11. The use of claim 9 , wherein an alkali metal salt derivative of the styrene derivative of Formula (I) is used as initiator for the copolymerization of i) one or more conjugated diene monomers and optionally ii) one or more vinyl aromatic monomers claim 9 ,wherein the alkali metal is selected from lithium, sodium, and potassium. The invention relates to [bis(trihydrocarbylsilyl)aminosilyl]-functionalized styrene and a method for its preparation. The styrene derivative can be particularly applied in the production of styrene-butadiene rubbers having unique physicochemical ...

Reactive polysiloxane and polymerizable composition comprising same

A polymerizable composition includes 100 parts by mass of a reactive polysiloxane being a polycondensation product of an alkoxy silicon compound including at least an alkoxy silicon compound of formula [1], and 10 to 500 parts by mass of a polymerizable compound having at least one polymerizable double bond. (X is a phenyl group having at least one substituent having a polymerizable double bond, a naphthyl group having at least one substituent having a polymerizable double bond, a biphenyl group having at least one substituent having a polymerizable double bond, or a phenanthryl group having at least one substituent having a polymerizable double bond, Ar 1 is a condensed ring hydrocarbon group having two or more benzene ring structures, or a hydrocarbon ring assembly group in which two or more aromatic rings are directly bonded through a single bond, and R 1 is methyl group, ethyl group, or isopropyl group).

TREATMENT LIQUID AND PATTERN FORMING METHOD

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C. 1. A pattern forming method comprising:forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent;exposing the resist film; andtreating the exposed resist film with a treatment liquid to form a pattern,wherein the treatment liquid includes two or more organic solvents,a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C.,a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, anda difference between the boiling point of the organic solvent having the highest boiling point and the boiling ...

PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD

A photoresist composition includes a radiation-sensitive acid generator, particles, and a first solvent. The radiation-sensitive acid generator is capable of generating an acid upon irradiation with a radioactive ray, an action of the acid allowing a solubility of a film made from the photoresist composition in a developer solution to be altered. The particles include a metal element and have a hydrodynamic radius as determined by a dynamic light scattering analysis of no greater than 20 nm. The photoresist composition may include an acid-labile compound including an acid-labile group. The radiation-sensitive acid generator may be the acid-labile compound including a group that is capable of generating an acid upon exposure to a radioactive ray.

PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

Provided are a pattern forming method for obtaining a pattern which is excellent in etching resistance and in which occurrence of pattern collapse can be suppressed, and a method for manufacturing an electronic device including the pattern forming method. The pattern forming method includes a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that contains a resin A having a repeating unit represented by General Formula (I) and a repeating unit represented by General Formula (BII), a step of exposing the film, and a step of developing the exposed film using a developer containing an organic solvent, to form a pattern. 2. The pattern forming method according to claim 1 ,{'sub': 4', '6, 'wherein Arin General Formula (I) and Arin General Formula (BII) are each independently a phenylene group or a naphthylene group.'}3. The pattern forming method according to claim 1 ,{'sub': 4', '6, 'wherein Xin General Formula (I) and Xin General Formula (BII) are each independently a single bond.'}4. The pattern forming method according to claim 1 ,wherein a content of the repeating unit represented by General Formula (BII) is 10% by mol or more and 80% by mol or less, with respect to all the repeating units in the resin A.5. The pattern forming method according to claim 1 ,wherein a content of the repeating unit represented by General Formula (BII) is 25% by mol or more and 65% by mol or less, with respect to all the repeating units in the resin A.6. The pattern forming method according to claim 1 ,wherein a content of the repeating unit represented by General Formula (I) is 10% by mol or more and 80% by mol or less, with respect to all the repeating units in the resin A.7. The pattern forming method according to claim 1 ,{'sub': '2', 'claim-text': {'br': None, 'sub': 1', '2', '3, '—C(Rx)(Rx)(Rx)\u2003\u2003(Y1), 'Wherein Yin General Formula (BII) is a group represented by Formula (Y1),'}{'sub': 1', '3', '1', '3, 'in Formula (Y1), Rxto ...

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device

There is provided a pattern forming method comprising (A) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin containing a repeating unit having a phenol skeleton and a repeating unit having a group capable of decomposing by the action of an acid to produce an alcoholic hydroxy group; (B) exposing the film; and (C) developing the exposed film by using an organic solvent-containing developer.

COPOLYMER CONTAINING RESIDUES OF VINYLBENZYL HALIDE AND VINYLBENZYL ALCOHOL AND SYNTHESIS THEREOF, POROUS STRUCTURE COMPRISING THE COPOLYMER AND PRODUCTION THEREOF, AND POROUS CARBON SPHERE

A copolymer, a method for producing the copolymer, a porous structure formed by the copolymer, a method for producing the porous structure, and a porous carbon sphere formed by carbonizing the porous structure are shown. The copolymer has a chemical structure of formula (1) or (2): 2. The copolymer of claim 1 , wherein 15%≦p≦65%.3. The copolymer of claim 1 , wherein the number-average molecular weight is 55 claim 1 ,000 g/mole or less.5. A method for producing a copolymer claim 1 , comprising:mixing a water-soluble initiator and a water-containing solvent in a container to form a starting solution;adding at least one monomer in the starting solution to form a mixed solution, wherein the at least one monomer comprises a vinylbenzyl halide;causing a polymerization reaction in the mixed solution at a reaction temperature; andprecipitating, in an organic solvent, a product of the polymerization reaction from the mixed solution.6. The method of claim 5 , wherein the water-soluble initiator is selected from 2 claim 5 ,2′-azobis(2-methylpropionamidine) dihydrochloride claim 5 , 4 claim 5 ,4′-azobis(4-cyanovaleric acid) claim 5 , ammonium persulfate ((NH)SO) claim 5 , sodium persulfate (NaSO) claim 5 , potassium persulfate (KSO) claim 5 , and hydroxymethanesulfinic acid monosodium salt dihydrate.7. The method of claim 5 , wherein the water-containing solvent further contains ethanol or isopropanol.8. The method of claim 5 , wherein the at least one monomer further comprises styrene claim 5 , methyl methacrylate claim 5 , vinyl laurate claim 5 , or a combination thereof.9. A porous structure claim 1 , having a body that has a plurality of pores and comprises the copolymer of .10. The porous structure of claim 9 , wherein the porous structure is a spherical structure.11. A porous structure claim 4 , having a body that has a plurality of pores and comprises the copolymer of .12. The porous structure of claim 11 , wherein the porous structure is a spherical structure.13. A ...

METHOD FOR PRODUCING RESIN AND METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION

By a method for producing a resin, a resin containing a repeating unit represented by General Formula (1) and a repeating unit containing a group that decomposes by the action of an acid to generate a polar group is produced, and the method includes a first step of obtaining a resin precursor containing a repeating unit represented by General Formula (2) and the repeating unit containing a group that decomposes by the action of an acid to generate a polar group, and a second step of obtaining the repeating unit represented by General Formula (1) by deprotecting a group represented by —OY in the repeating unit represented by General Formula (2) in the resin precursor with an acid or a base. 5. The method for producing a resin according to claim 3 ,wherein an acid dissociation constant of a conjugate acid of the base is 6.0 or more.6. The method for producing a resin according to claim 4 ,wherein an acid dissociation constant of a conjugate acid of the base is 6.0 or more.9. The method for producing a resin according to claim 7 ,wherein the repeating unit represented by General Formula (2) is represented by General Formula (6) and the group represented by —O—Z—O— is deprotected with an acid in the second step.10. The method for producing a resin according to claim 8 ,wherein the repeating unit represented by General Formula (2) is represented by General Formula (6) and the group represented by —O—Z—O— is deprotected with an acid in the second step.11. The method for producing a resin according to claim 7 ,wherein an acid dissociation constant of the acid is −1.0 or more.12. The method for producing a resin according to claim 8 ,wherein an acid dissociation constant of the acid is −1.0 or more.13. The method for producing a resin according to claim 9 ,wherein an acid dissociation constant of the acid is −1.0 or more.14. The method for producing a resin according to claim 1 ,wherein the content of the repeating unit represented by General Formula (1) in the resin is 15% ...

Resin, resist composition and method for producing resist pattern

Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I) and a structural unit having an acid-labile group: wherein R 1 represents a hydrocarbon group which may have a substituent, R 2 each independently represent an alkyl group which may have a halogen atom, a hydrogen atom or a halogen atom, Ar represents an aromatic hydrocarbon group which may have a substituent, L 1 represents a group represented by formula (L 1 -1), etc., L 11 , L 13 , L 15 and L 17 each independently represent an alkanediyl group, L 12 , L 14 , L 16 and L 18 each independently represent —O—, —CO—, —CO—O—, etc., * and ** are bonds, and ** represents a bond to an iodine atom.

Polymer compound for conductive polymer and method for producing same

A polymer compound having a weight average molecular weight in the range of 1,000 to 500,000, and contains one or more repeating units represented by formula (1) and one or more repeating units represented by formula (2): R 1 represents a hydrogen atom or a methyl group; Rf 1 represents a linear or branched alkyl group having 1 to 4 carbon atoms or a phenyl group, and has at least one fluorine atom or a trifluoromethyl group in Rf 1 ; Z 1 represents a single bond, an arylene group having 6 to 12 carbon atoms or —C(═O)—O—R 2 —; R 2 represents a linear, branched or cyclic alkylene group having 1 to 12 carbon atoms, an arylene group having 6 to 10 carbon atoms or an alkenylene group having 2 to 10 carbon atoms, and may have an ether group, a carbonyl group or an ester group in R 2 ; and “a” is 0<a≤1.0, and “b” is 0<b<1.0.

METHOD OF PREPARING ARTICLE WITH POLYANILINE COATING

A method is used to provide an electrically-conductive polyaniline pattern by providing a uniform layer of a photocurable composition on a substrate. The photocurable composition comprises a water-soluble reactive polymer comprising (a) greater than 40 mol % of recurring units comprising sulfonic acid or sulfonate groups, and (b) at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition. The photocurable composition is exposed to cause crosslinking via [2+2] photocycloaddition of the (b) recurring units, thereby forming a crosslinked polymer. Any remaining water-soluble reactive polymer is removed. The crosslinked polymer is contacted with an aniline reactive composition having aniline monomer and up to 0.5 molar of an aniline oxidizing agent, thereby forming an electrically-conductive polyaniline disposed either within, on top of, or both within and on top of, the crosslinked polymer. 1. A method for providing an electrically-conductive polyaniline pattern , the method comprising:providing a uniform layer of a photocurable composition on a supporting side of a substrate, the photocurable composition comprising a water-soluble reactive polymer comprising (a) greater than 40 mol % of recurring units comprising sulfonic acid or sulfonate groups, (b) at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition, and optionally (c) at least 1 mol % of recurring units comprising a pendant amide, hydroxyl, lactam, phosphonic acid, phosphonate, carboxylic acid, or carboxylate group, all amounts based on the total recurring units in the water-soluble reactive polymer;exposing the photocurable composition to radiation sufficient to cause crosslinking via [2+2] photocycloaddition of the (b) recurring units, thereby forming a crosslinked polymer on the supporting side of the substrate;removing any non-crosslinked water-soluble reactive polymer from the supporting ...

THERMOPLASTIC MODACRYLIC RESIN COMPOSITION, METHOD FOR MANUFACTURING SAME, MOLDED ARTICLE OF SAME, AND ACRYLIC FIBERS AND METHOD FOR MANUFACTURING SAME

A thermoplastic modacrylic resin composition includes a modacrylic resin and a plasticizer The modacrylic resin includes 15 to 85 wt % of acrylonitrile, 15 to 85 wt % of vinyl chloride and/or vinylidene chloride, and 0 to 20 wt % of another vinyl monomer, and the plasticizer is an organic compound that is compatible with the modacrylic resin and has a boiling point of at least 200° C. A method for manufacturing a thermoplastic modacrylic resin composition includes melt-kneading a powder mixture obtained by mixing a modacrylic resin powder and an organic compound that is compatible with the modacrylic resin and has a boiling point of at least 200° C. Acrylic fibers are composed of a thermoplastic modacrylic resin composition. 115.-. (canceled)16. Acrylic fibers composed of a thermoplastic modacrylic resin composition ,wherein the thermoplastic modacrylic resin composition comprises a modacrylic resin and a plasticizer,wherein the modacrylic resin comprises 15 to 85 wt % of acrylonitrile, 15 to 85 wt % of vinyl chloride and/or vinylidene chloride, and 0 to 20 wt % of another vinyl monomer,wherein the plasticizer is an organic compound that is compatible with the modacrylic resin and has a boiling point of at least 200° C., andwherein the acrylic fibers have a predetermined shape.17. (canceled)18. The acrylic fibers according to claim 16 , further comprising a stabilizer selected from the group consisting of an epoxy-based heat stabilizer claim 16 , a hydrotalcite-based heat stabilizer claim 16 , an aliphatic acid anhydride claim 16 , and an alicyclic acid anhydride.19. The acrylic fibers according to claim 16 , wherein the plasticizer is at least one selected from the group consisting of: dimethyl sulfone claim 16 , diethyl sulfone claim 16 , dipropyl sulfone claim 16 , dibutyl sulfone claim 16 , diphenyl sulfone claim 16 , vinyl sulfone claim 16 , ethyl methyl sulfone claim 16 , methyl phenyl sulfone claim 16 , methyl vinyl sulfone claim 16 , 3-methylsulfolane claim ...

PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT AND METHOD FOR PRODUCING SAME, METHOD FOR PRODUCING RESIN PATTERN, CURED FILM, LIQUID CRYSTAL DISPLAY DEVICE, ORGANIC EL DISPLAY DEVICE, INFRARED CUT FILTER, AND SOLID-STATE IMAGING DEVICE

Provided are a photosensitive resin composition from which a cured product having a thin film thickness, excellent light-shielding properties, and a high surface hardness is obtained; as well as a cured product obtained by curing the photosensitive resin composition, a cured film and a method for producing the same, a method for producing a resin pattern, and a liquid crystal display device, an organic EL display device, an infrared cut filter, or a solid-state imaging device, each having the cured film. The photosensitive resin composition of the present invention includes (Component A) a polymer having a constitutional unit containing a group in which an acid group is protected by an acid-decomposable group; (Component B) a photoacid generator; (Component C) a solvent; (Component D) a compound having a crosslinkable group and a molecular weight in the range of 100 to 2,000; and (Component S) titanium black. 1. A photosensitive resin composition comprising:(Component A) a polymer having a constitutional unit containing a group in which an acid group is protected by an acid-decomposable group;(Component B) a photoacid generator;(Component C) a solvent;(Component D) a compound having a crosslinkable group and a molecular weight in the range of 100 to 2,000; and(Component S) titanium black.2. The photosensitive resin composition according to claim 1 , wherein the crosslinkable group is at least one selected from the group consisting of an epoxy group claim 1 , an oxetanyl group claim 1 , an alkoxymethyl group claim 1 , a methylol group claim 1 , a blocked isocyanate group claim 1 , and a group having an ethylenically unsaturated bond.3. The photosensitive resin composition according to claim 1 , wherein the crosslinkable group equivalent in the photosensitive resin composition is 100 to 1 claim 1 ,000 per 1 g of organic solid content.4. The photosensitive resin composition according to claim 1 , further comprising (Component E) a dispersant.5. The photosensitive resin ...

Conductive Polymer Dispersion for Improved Reliability

An improved capacitor is provided wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm. 1. A process for forming a solid electrolyte capacitor comprising:providing an anodized anode; andforming a conductive polymer layer on said anodized anode wherein said conductive polymer layer comprises first particles comprising conductive polymer and polyanion and second particles comprising said conductive polymer and said polyanion wherein said first particles have an average particle diameter of at least 1 micron to no more than 10 microns and said second particles have an average particle diameter of at least 1 nm to no more than 600 nm wherein said conductive polymer layer comprises an internal polymer layer and an external polymer layer and said internal polymer comprises pre-polymerized conductive polymer.2. The process for forming a solid electrolytic capacitor of wherein said external polymer layer comprises said first particles.3. The process for forming a solid electrolytic capacitor of wherein said external polymer layer comprise said second particles.4. The process for forming a solid electrolytic capacitor of wherein said internal polymer layer comprises said second particles.5. The process for forming a solid electrolytic capacitor of wherein said external polymer layer comprises pre-polymerized conductive polymer.6. The process for forming a solid electrolytic capacitor of wherein said internal polymer layer and said external polymer layer are free of in-situ polymerized conducting polymer.7. The process for forming a solid electrolytic capacitor of further comprising forming a layer ...

PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

The pattern forming method includes (1) a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, (2) a step of exposing the film with actinic rays or radiation, and (3) a step of developing the exposed film using a developer containing an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains an acid-decomposable resin (1) having a repeating unit (a) having an aromatic ring and a repeating unit (b) represented by a specific general formula, and the content of the repeating unit (a) is 55% by mole or more with respect to all the repeating units of the acid-decomposable resin (1). The method for manufacturing an electronic device includes the pattern forming method. 3. The pattern forming method according to claim 1 ,wherein the total number of carbon atoms of Rx1 to Rx3 in General Formula (Y1) of the repeating unit (b) is 8 or less.4. The pattern forming method according to claim 1 ,wherein the ring formed by the bonding of two of Rx1 to Rx3 in General Formula (Y1) of the repeating unit (b) is a 5- or 6-membered ring.5. The pattern forming method according to claim 1 ,wherein the ring formed by the bonding of two of Rx1 to Rx3 in General Formula (Y1) of the repeating unit (b) is a monocycle.6. The pattern forming method according to claim 1 ,wherein the content of the repeating unit (a) of the acid-decomposable resin (1) is 70% by mole or more with respect to all the repeating units of the acid-decomposable resin (1).7. The pattern forming method according to claim 2 ,wherein the content of the repeating unit (a) of the acid-decomposable resin (1) is 70% by mole or more with respect to all the repeating units of the acid-decomposable resin (1).8. The pattern forming method according to claim 3 ,wherein the content of the repeating unit (a) of the acid-decomposable resin (1) is 70% by mole or more with respect to all the repeating units of the acid-decomposable resin (1).9. The ...

Sulfonated polyphosphazene copolymer proton exchange membrane material and method for preparing such membrane

A sulfonated polyphosphazene copolymer proton exchange membrane material, and a method for preparing such membrane includes a macromolecule initiator as bromo polyphosphazene is subjected to atom transfer radical polymerization with styrene, yielding a graft copolymer, which is hydrazinolyzed with hydrazine hydrate resulting in a copolymer including a hydroxyl group. The copolymer is reacted with 1,4-butane sultone to yield a sulfonated copolymer finally. The polymer is cross-linked with 2,6-di(hydroxymethyl)-4-methyl phenol (BHMP) as a cross linking agent in the presence of methyl sulfonic acid, yielding cross-linked proton exchange membrane. Such cross-linked graft copolymer membrane has high proton conductivity, low methanol hindrance, and low cost, and has ideal effect when applied in fuel cells as proton exchange membrane material.

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive resin composition includes a first compound represented by formula (1), a first polymer comprising an acid-labile group, and a radiation-sensitive acid generator other than the first compound. The radiation-sensitive acid generator includes an onium salt compound. In the formula (1), n is 2 or 3; m is 1 or 2; Y represents a monovalent radiation-sensitive onium cation; and L represents a single bond or an organic group having a valency of n. L includes linking moieties each linking two of the carboxylate groups in formula (1). Number of atom(s) included in a linking moiety having a minimum number of bonds among the linking moieties is 0 to 10. In a case where L represents a single bond, n is 2, and in a case where n is 2, m is 1. 2. The radiation-sensitive resin composition according to claim 1 , wherein the onium salt compound is represented by formula (vi):{'br': None, 'sup': b1', 'b2', '−', '+, 'sub': '3', 'R—R—SOM\u2003\u2003(vi)'}{'sup': b1', 'b2', '+, 'wherein, in the formula (vi), Rrepresents a monovalent group comprising an alicyclic structure, or a monovalent group comprising an aliphatic hetero ring structure; Rrepresents a fluorinated alkanediyl group having 1 to 10 carbon atoms; and Mrepresents a monovalent radioactive ray-degradable onium cation.'}3. The radiation-sensitive resin composition according to claim 1 , further comprising a second polymer having a total percentage content by mass of fluorine atoms and silicon atoms greater than a total percentage content by mass of fluorine atoms and silicon atoms of the first polymer.4. The radiation-sensitive resin composition according to claim 3 , wherein the second polymer comprises an alkali-labile group.6. The radiation-sensitive resin composition according to claim 1 , wherein L in the formula (1) represents a single bond or a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.7. The radiation-sensitive resin composition according to claim 1 , ...

Film forming composition containing fluorine-containing surfactant

A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C 3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

THERMOSETTING COMPOSITION WITH PHOTO-ALIGNMENT PROPERTY, ALIGNMENT LAYER, SUBSTRATE WITH ALIGNMENT LAYER, RETARDATION PLATE, AND DEVICE

An embodiment of the present invention provides a thermosetting composition with a photo-alignment property, including a copolymer containing a photo-alignment constitutional unit, and a thermal cross-linking constitutional unit in which a thermal cross-linking group is bonded via a straight-chain alkylene group with a carbon number of 4 to 11, or via a polyethylene glycol group with a cycle number of 2 to 5. 1. A thermosetting composition with a photo-alignment property , comprising a copolymer containing a photo-alignment constitutional unit , and a thermal cross-linking constitutional unit in which a thermal cross-linking group is bonded via a straight-chain alkylene group with a carbon number of 4 to 11 , or via a polyethylene glycol group with a cycle number of 2 to 5.3. The thermosetting composition with a photo-alignment property according to claim 2 , wherein the thermal cross-linking group is selected from the group consisting of a hydroxy group claim 2 , a carboxy group claim 2 , a mercapto group claim 2 , a glycidyl group claim 2 , and an amide group.4. The thermosetting composition with a photo-alignment property according to claim 1 , further comprising a cross-linking agent.5. The thermosetting composition with a photo-alignment property according to claim 1 , wherein the thermal cross-linking group is a hydroxy group.6. The thermosetting composition with a photo-alignment property according to claim 1 , wherein the thermal cross-linking constitutional unit contains —(CH2)n-OH or —(C2H4O)m-H claim 1 , provided that “n” is 4 to 11 and “m” is 2 to 5.7. The thermosetting composition with a photo-alignment property according to claim 1 , wherein the photo-alignment group of the photo-alignment constitutional unit is a functional group for causing a photo-dimerization reaction or a photo-isomerization reaction.8. The thermosetting composition with a photo-alignment property according to claim 1 , wherein the photo-alignment group of the photo-alignment ...

POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS

A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER. 4. A positive resist composition comprising a base resin comprising the polymer of .5. The positive resist composition of claim 4 , further comprising an organic solvent and an acid generator claim 4 , the resist composition being a chemically amplified resist composition.6. The positive resist composition of claim 4 , further comprising a basic compound.7. The positive resist composition of claim 4 , further comprising a surfactant.8. A pattern forming process comprising the steps of coating the positive resist composition of onto a substrate claim 4 , baking to form a resist film claim 4 , exposing the resist film to high-energy radiation claim 4 , and developing the exposed resist film in a developer.9. The process of wherein the substrate is a photomask blank.10. The process of wherein the high-energy radiation is UV having a wavelength of 180 to 400 nm.11. The process of wherein the high-energy radiation is EB or EUV having a wavelength of 3 to 15 nm.12. A photomask blank coated with the positive resist composition of . This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2016-108882 filed in Japan on May 31, 2016, the entire contents of which are hereby incorporated by reference.This invention relates to a polymer, positive resist composition, and pattern forming process.To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. At the present, the manufacture of 10 nm node logic devices and the manufacture of DRAM devices of 20 nm or less are approaching to a mass level. They are manufactured by a double patterning ...