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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 3240. Отображено 100.
06-01-2022 дата публикации

Compositions for Engine Carbon Removal and Methods and Apparatus for Removing Carbon

Номер: US20220003163A1
Автор: Thoma Steven G., Thompson Bernie C.
Принадлежит:

The testing of various chemicals has yielded new chemicals and chemical mixtures for the use of removing carbon deposits from the internal combustion engine. Some of these chemicals and chemical mixtures have proven to work better across many different carbon types than other chemicals that were tested. These chemical terpenes are typically produced from plants. One standard terpene mixture is known as turpentine. The chemical turpentine and chemicals found in turpentine have been determined, through our research and testing, to be extremely effective at removing the carbon that is produced within the internal combustion engine. 1. A method of removing existing carbonaceous deposits from an internal combustion engine with a fuel additive; the engine including an induction system , one or more cylinders , and an exhaust system; the carbonaceous deposits are of the type built up over time during the operation of the engine (hereinafter referred to as “carbon deposits”); the method including the steps of:selecting a terpene;blending the selected terpene with the fuel used to run the engine, the percentage of the terpene in the fuel stock being sufficient to solubilize carbon deposits;running the engine;utilizing the terpene in the fuel stock to solubilize at least some the carbon deposits in at least one of the induction system, cylinders and exhaust system;removing the solubilized carbon deposits while the engine is running; andburning the solubilized and removed carbon deposits with the fuel stock in the cylinders as part of the normal combustion process.2. The method as set forth in claim 1 , wherein the terpene is selected from the group of oil of turpentine (TPT) claim 1 , y-terpinene (y-T) claim 1 , p-cymene (p-C) claim 1 , terpinolene (TO) claim 1 , alpha-pinene (A-p) claim 1 , (−)-beta-pinene (b-p) claim 1 , camphene (ch) claim 1 , 3-carene (3-c) claim 1 , R-(+)-limonene claim 1 , and S-(−)-limonene.3. The method as set forth in claim 2 , wherein the fuel stock ...

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Номер записи: 1
05-01-2017 дата публикации

METAL SILICATE AND ORGANIC DEPOSIT INHIBITOR/DISPERSANT FOR THERMAL RECOVERY OPERATIONS OF HYDROCARBON FUELS

Номер: US20170001894A1
Автор: Hoots John E., Keizer Timothy S., Maharajh Edward, Sommese Anthony G.
Принадлежит:

The present invention generally relates to methods for removing an organic deposit or for inhibiting deposition of deposit-forming comprising contacting a cleaning composition or an anti-coking composition with a surface. The surface can have an organic deposit or be susceptible to forming an organic deposit and the surface can be in contact with a liquid containing organics. The liquid can be produced from a thermal recovery system, and the surface can be an internal surface of a piece of steam-generating or vapor-generating equipment. 1. A method for removing an organic deposit or for inhibiting deposition of deposit-forming organics comprising contacting a cleaning composition with a surface , the surface having an organic deposit or being susceptible to forming an organic deposit and the surface being in contact with a liquid containing organics , the liquid being produced from a thermal recovery system , and the surface being an internal surface of a piece of steam-generating or vapor-generating equipment; wherein the cleaning composition comprises an alkoxylated polymer , an alkoxy alcohol , and an aromatic solvent.2. The method of wherein the alkoxylated polymer comprises an alkoxylated alkylphenol-formaldehyde polymer.3. The method of wherein the alkoxylated polymer comprises an ethoxylated nonylphenol-formaldehyde polymer.4. The method of wherein the nonylphenol-formaldehyde polymer has a molar ratio of nonylphenol to formaldehyde of about 1:1.5. The method of claim 4 , wherein the molar ratio of ethylene oxide to nonylphenol-formaldehyde polymer is from about 6:1 to about 10:1.6. The method of claim 5 , wherein the molecular weight of the ethoxylated nonylphenol polymer is from about 4000 to about 10000 Daltons.7. The method of claim 6 , wherein the molar ratio of ethylene oxide to nonylphenol-formaldehyde polymer is from about 8:1 to about 10:1 and the molecular weight of the polymer is from about 4000 to about 5500 Daltons.8. The method of wherein the ...

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Номер записи: 2
07-01-2016 дата публикации

Cleaning Gas and Cleaning Method

Номер: US20160002574A1
Автор: KIKUCHI Akiou, OOMORI Hiroyuki, Umezaki Tomonori
Принадлежит: CENTRAL GLASS COMPANY, LIMITED

A cleaning gas according to the present invention is intended for removing a silicon carbide-containing deposit on a base of at least partially graphitized carbon and is characterized by containing iodine heptafluoride. It is possible by the use of such a cleaning gas to remove silicon carbide without etching of graphite. 1. A cleaning gas for removing a silicon carbide-containing deposit on a base of at least partially graphitized carbon , the cleaning gas comprising iodine heptafluoride.2. The cleaning gas according to claim 1 , further comprising at least one kind of oxidizing gas selected from the group consisting of F claim 1 , ClF claim 1 , COF claim 1 , O claim 1 , O claim 1 , NO claim 1 , NO claim 1 , NO and NO.3. The cleaning gas according to claim 1 , further comprising at least one kind of inert gas selected from the group consisting of He claim 1 , Ne claim 1 , Ar claim 1 , Xe claim 1 , Kr and N.4. The cleaning gas according to claim 1 , wherein the base is an inner wall or attachment device of silicon carbide single crystal production equipment.5. The cleaning gas according to claim 4 , wherein the silicon carbide single crystal production equipment is for production of silicon carbide epitaxial films.6. A cleaning method comprising claim 1 , while heating a base of at least partially graphitized carbon claim 1 , removing a silicon carbide-containing deposit on the base by the cleaning gas according to .7. The cleaning method according to claim 6 , wherein the cleaning gas is brought into contact with the base while the base is heated to a temperature of 150 to 700° C.8. The cleaning method according to claim 6 , wherein the cleaning gas further comprises at least one kind of oxidizing gas selected from the group consisting of F claim 6 , ClF claim 6 , COF claim 6 , O claim 6 , O claim 6 , NO claim 6 , NO claim 6 , NO and NO.9. The cleaning method according to claim 6 , wherein the cleaning gas further comprises at least one kind of inert gas selected ...

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Номер записи: 3
04-01-2018 дата публикации

Method of cleaning residual pesticide from an agricultural vessel

Номер: US20180002644A1
Автор: Amanda C. Herr, David A. Morgenstern, James W. Taylor
Принадлежит: MONSANTO TECHNOLOGY LLC

The present invention generally relates to methods of cleaning residual pesticide from an agricultural vessel, and to kits and compositions useful for the practice of such methods.

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Номер записи: 4
04-01-2018 дата публикации

COMPOSITION FOR CLEANING GASOLINE ENGINE FUEL DELIVERY SYSTEMS, AIR INTAKE SYSTEMS, AND COMBUSTION CHAMBERS

Номер: US20180002645A1
Автор: Bartley Stuart L., Nicholls Michael D., Parker Garrett, Weyenberg Thomas R.
Принадлежит: THE LUBRIZOL CORPORATION

A cleaning composition, which is suitable for cleaning fuel delivery systems, air-intake systems, intake valves, and combustion chambers, includes at least 3 wt. % of a polyether component, at least 5 wt. % of a polar solvent, and at least 5 wt. % a non-polar solvent. The polyether component is selected from polyethers, polyetheramines, and mixtures thereof. 1. A composition for cleaning fuel delivery systems , air intake systems , and combustion chambers comprising:at least 3 wt. % of a polyether component, the polyether component being selected from the group consisting of polyethers, polyetheramines, and mixtures thereof;at least 5 wt. % of a polar solvent;at least 5 wt. % of a non-polar solvent; anda functional solvent, other than the polar solvent and non-polar solvent, the functional solvent comprising an alkoxyalcohol.2. The composition of claim 1 , wherein the polyether component comprises a poly(alkylene oxide)amine.3. The composition of claim 2 , wherein the alkylene oxide in the poly(alkylene oxide)amine is selected from butylene oxide claim 2 , propylene oxide claim 2 , and mixtures thereof.4. The composition of claim 1 , wherein the polyether or polyetheramine is represented by the formula R[OCHCH(R)]A claim 1 , where R is a hydrocarbyl group claim 1 , Ris selected from hydrogen and a hydrocarbyl group claim 1 , A is a nitrogen-containing group or a hydroxyl group claim 1 , and n is a number which is at least 2.5. The composition of claim 4 , wherein R is a hydrocarbyl group of 1-30 carbon atoms.6. (canceled)7. (canceled)8. The composition of claim 4 , wherein n is at least 10.9. The composition of claim 4 , wherein A is selected from amines claim 4 , ether amines and mixtures thereof.10. The composition of claim 9 , wherein A is selected from —OCHCHCHNRRand —NRR claim 9 , where each Ris independently hydrogen or a hydrocarbyl group of one or more carbon atoms claim 9 , and each Ris independently hydrogen claim 9 , a hydrocarbyl group of one or more ...

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Номер записи: 5
02-01-2020 дата публикации

Cleaning agent composition for semiconductor device substrate, method of cleaning semiconductor device substrate, method of manufacturing semiconductor device substrate, and semiconductor device substrate

Номер: US20200002652A1
Автор: Ken Harada, Tomohiro Kusano, Yasuhiro Kawase
Принадлежит: Mitsubishi Chemical Corp

According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

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Номер записи: 6
07-01-2021 дата публикации

Composition having suppressed alumina damage and production method for semiconductor substrate using same

Номер: US20210002591A1
Автор: Akinobu HORITA, Kenji Yamada, Takahiro Kikunaga, Toshiyuki Oie
Принадлежит: Mitsubishi Gas Chemical Co Inc

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

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Номер записи: 7
03-01-2019 дата публикации

COMPOSITION, ITS USE AND METHOD FOR REMOVING AND PREVENTING WET STRENGTH RESINS FROM CONTAMINATING PAPERMAKING EQUIPMENT

Номер: US20190002804A1
Автор: Casasús Anna, Luo Yuping, Zou Yong
Принадлежит: KEMIRA OYJ

Compositions and methods for cleaning wet strength resin contamination from papermaking equipment and/or for preventing wet strength resins from contaminating papermaking equipment using the compositions are disclosed. The compositions comprise an aqueous solution of a weak organic acid; a surfactant, preferably a nonionic surfactant, a divalent metal ion containing catalyst and optionally a glycol ether containing solvent. 1. A composition for cleaning wet strength resin contamination from a papermaking equipment and/or for preventing wet strength resins from contaminating the papermaking equipment , the composition comprising:an aqueous solution of a weak organic acid,a surfactant, preferably a nonionic surfactant,a divalent metal ion containing catalyst, andoptionally a glycol ether containing solvent.2. The composition of claim 1 , wherein the organic acid is selected from a group consisting of citric acid claim 1 , adipic acid claim 1 , glycolic acid and combinations thereof.3. The composition of claim 1 , wherein the surfactant is selected from a group consisting of isotridecyl alcohol ethoxylate claim 1 , dodecanol ethoxylate claim 1 , ethoxylated 2 claim 1 ,4 claim 1 ,7 claim 1 ,9-tetramethyl 5 decyne-4 claim 1 ,7-diol claim 1 , polyethylene glycol trimethylnonyl ether claim 1 , polysorbates claim 1 , ethoxylated secondary alcohols containing surfactants and combinations thereof.4. The composition of claim 1 , wherein the divalent metal ion is selected from a group consisting of Ca claim 1 , Mg claim 1 , Ba claim 1 , Fe claim 1 , Cu claim 1 , Ni claim 1 , Mn claim 1 , and Co claim 1 , preferably Fe claim 1 , Ca claim 1 , Cuor Ni.5. The composition of claim 1 , wherein the glycol ether containing solvent is selected from the group consisting of diethylene glycol monobutyl ether claim 1 , diethylene glycol monoethyl ether and a combination thereof.6. The composition of claim 1 , wherein organic acid concentration is within 10%-45% claim 1 , preferably 20%-30%; ...

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Номер записи: 8
13-01-2022 дата публикации

Maintenance liquid and maintenance method

Номер: US20220009236A1
Автор: Kazuki Ohara, Takahito Makinouchi
Принадлежит: MIMAKI ENGINEERING CO LTD

Provided are a maintenance liquid and a maintenance method that can solve an ejection problem of a UV curable inkjet printer. The maintenance liquid includes: a first ingredient in which a water-soluble compound is soluble and a cured matter of a UV curable ink is insoluble. The maintenance method includes: a first cleaning process at which a water-soluble compound that adheres to an inkjet head included in the UV curable inkjet printer is dissolved by a first maintenance liquid including the first ingredient in which the water-soluble compound is soluble and a cured matter of a UV curable ink is insoluble, and a second cleaning process at which the inkjet head is cleaned by a second maintenance liquid including a second ingredient in which the water-soluble compound is insoluble and the cured matter of the UV curable ink is soluble.

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Номер записи: 9
27-01-2022 дата публикации

CLEANING SOLUTION COMPOSITION AND CLEANING METHOD USING THE SAME

Номер: US20220025299A1
Автор: JEONG Yong Ho, JUNG Kyong Jin, PARK Kun Hee, YUN Young Ho
Принадлежит: KCTECH CO., LTD.

A cleaning solution composition and a cleaning method using the cleaning solution composition are provided. The cleaning solution composition includes a chelating agent including a first organic acid and a second organic acid, and an etching agent including a fluoride compound. 1. A cleaning solution composition comprising:a chelating agent comprising a first organic acid and a second organic acid; andan etching agent comprising a fluoride compound.2. The cleaning solution composition of claim 1 , whereinthe first organic acid comprises a carboxyl group or a sulfonic acid group, andthe second organic acid comprises a phosphoric acid group.3. The cleaning solution composition of claim 1 , whereinthe first organic acid is present in an amount of 1% by weight (wt %) to 10 wt %, andthe second organic acid is present in an amount of 0.01 wt % to 5 wt %.4. The cleaning solution composition of claim 1 , wherein the first organic acid comprises at least one selected from a group consisting of malic acid claim 1 , malonic acid claim 1 , adipic acid claim 1 , succinic acid claim 1 , tartaric acid claim 1 , glutaric acid claim 1 , glycolic acid claim 1 , aspartic acid claim 1 , itaconic acid claim 1 , glutamic acid claim 1 , tricarballylic acid claim 1 , pimelic acid claim 1 , suberic acid claim 1 , sebacic acid claim 1 , stearic acid claim 1 , pyruvic acid claim 1 , acetoacetic acid claim 1 , glyoxylic acid claim 1 , azelaic acid claim 1 , fumaric acid claim 1 , glutaconic acid claim 1 , traumatic acid claim 1 , muconic acid claim 1 , aconitic acid claim 1 , carballylic acid claim 1 , tribasic acid claim 1 , mellitic acid claim 1 , isocitric acid claim 1 , citric acid claim 1 , lactic acid claim 1 , gluconic acid claim 1 , maleic acid claim 1 , ascorbic acid claim 1 , iminoacetic acid claim 1 , oxalic acid claim 1 , pyrogallic acid claim 1 , formic acid claim 1 , acetic acid claim 1 , propionic acid claim 1 , butyric acid claim 1 , valeric acid claim 1 , hexanoic acid claim 1 ...

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Номер записи: 10
09-01-2020 дата публикации

Equipment Cleaning System And Method

Номер: US20200009620A1
Автор: Bewlay Bernard Patrick, Dolley Evan Jarrett, Jenkins Andrew James, JR. Byron Andrew, Kalb Brian, Keith Sean Robert, Pritchard, Rutkowski Stephen Francis, Searing Alistair, TIBBETTS Nicole
Принадлежит:

A cleaning system and method uses a tank holding a fluid detergent and an equipment assembly formed from a plurality of discrete components joined together. One or more ultrasound transducers remove one or more deposits on the equipment assembly by generating and propagating high frequency ultrasound waves into the fluid detergent while the equipment assembly is in contact with the fluid detergent. 1. A method comprising:immersing an engine assembly formed from multiple parts into a fluid detergent in a tank, wherein a pH value of the fluid detergent is less than 7;exposing the engine assembly to ultrasound waves having a frequency greater than 40 kHz;generating cavitation of the fluid detergent to remove deposits on one or more of the parts of the engine assembly without damaging the engine assembly; andplacing a shielding and damping device into contact with the engine assembly prior to exposing the engine assembly to the ultrasound waves, wherein the shielding and damping device prevents damage to the engine assembly by the ultrasound waves.2. The method of claim 1 , wherein the ultrasound waves have a frequency that is at least 80 kHz.3. The method of claim 1 , wherein generating cavitation of the fluid detergent removes the deposits without focusing the ultrasound waves at a location where the deposits are located.4. The method of claim 1 , wherein the fluid detergent includes a citric acid detergent having 0.1 to 0.5 percent by weight of a citric acid.5. The method of claim 1 , further comprising preventing resonant frequencies of the frequency of the ultrasound waves from reaching the engine assembly claim 1 ,wherein the damping device is at least partially formed of neoprene.6. The method of claim 1 , further comprising moving the engine assembly within the tank by rotating claim 1 , lifting or lowering the engine assembly within the tank for propagating and generating cavitation of the fluid detergent around many different surfaces of the engine assembly ...

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Номер записи: 11
10-01-2019 дата публикации

SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

Номер: US20190010430A1
Автор: JO MIYOUNG, KORIAKIN ANTON, LEE MONG-RYONG, YEON Yerim
Принадлежит:

Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes applying a treatment liquid containing a monomeric substance to a substrate that is intended to be cleaned, curing the treatment liquid with a cleaning film by irradiating light to the treatment liquid and polymerizing the monomeric substance, and removing the cleaning film. 1. A substrate treating method comprising:applying a treatment liquid containing a monomeric substance to a substrate that is intended to be cleaned;curing the treatment liquid with a cleaning film by irradiating light to the treatment liquid and polymerizing the monomeric substance; andremoving the cleaning film.2. The substrate treating method of claim 1 , wherein the cleaning film has a net structure that is formed by polymerizing the monomeric substance.3. The substrate treating method of claim 1 , wherein a solvent for the treatment liquid is water.4. The substrate treating method of claim 1 , wherein the light has a wavelength of an ultraviolet ray band.5. The substrate treating method of claim 1 , wherein the treatment liquid includes a photo initiator.6. The substrate treating method of claim 1 , wherein the monomeric substance forms an acrylate-based compound through a polymerization.7. A substrate treating apparatus comprising:a support member configured to support a substrate;a treatment liquid discharging member configured to discharge a treatment liquid containing a monomeric substance to the substrate located in the support member; anda light irradiator configured to irradiate light to the treatment liquid discharged to the substrate.8. The substrate treating apparatus of claim 7 , wherein the light irradiator irradiates light to an area between the center of rotation of the substrate and an outer end of the substrate.9. The substrate treating apparatus of claim 7 , wherein the light irradiator irradiates light such that the light passes through the center of ...

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Номер записи: 12
12-01-2017 дата публикации

Solvent-Based Mitigating Of Organic Contaminants In A Hard Disk Drive

Номер: US20170011778A1
Автор: Pathem Bala Krishna, Raman Vedantham
Принадлежит:

Mitigating organic contaminants within a hard disk drive (HDD) may include introducing an organic solvent into the HDD to dissolve organic contaminants and, therefore, to inhibit such contaminants from fouling operation of the HDD device. Organic solvents such as toluene and/or hexane may be used to dissolve organic contaminants such as hydrocarbons and siloxanes. 1. A hard disk drive comprising:a recording disk medium rotatably mounted on a spindle;a read-write head slider comprising a read-write transducer configured to read from and to write to said disk medium;a voice coil actuator configured to move said head slider to access portions of said disk medium; anda solvent introduction mechanism comprising an organic solvent without a corresponding solute;wherein said organic solvent acts to dissolve organic contaminants within said hard disk drive.2. (canceled)3. The hard disk drive of claim 1 , wherein said organic solvent acts to dissolve at least a portion of hydrocarbons within said hard disk drive.4. The hard disk drive of claim 1 , wherein said organic solvent acts to dissolve at least a portion of siloxanes within said hard disk drive.5. The hard disk drive of claim 1 , wherein said organic solvent comprises toluene (CH).6. The hard disk drive of claim 1 , wherein said organic solvent comprises hexane (CH).7. The hard disk drive of claim 1 , wherein said solvent introduction mechanism comprises:a fabric in which said organic solvent is absorbed.8. The hard disk drive of claim 1 , wherein said solvent introduction mechanism comprises:a recirculation filter comprising said organic solvent.9. A method for mitigating organic contaminants within a hard disk drive claim 1 , the method comprising:introducing an organic solvent, without a corresponding solute, into said hard disk drive to dissolve said organic contaminants.10. The method of claim 9 , wherein said organic solvent comprises toluene (CH).11. The method of claim 9 , wherein said organic solvent ...

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Номер записи: 13
03-02-2022 дата публикации

COMPOSITIONS COMPRISING 1,2-DICHLORO-1,2-DIFLUOROETHYLENE FOR USE IN CLEANING AND SOLVENT APPLICATIONS

Номер: US20220033741A1
Автор: MUSYIMI HARRISON K, PETROV VIACHESLAV A, SIMONI LUKE DAVID
Принадлежит: THE CHEMOURS COMPANY FC, LLC

The present application provides compositions comprising 1,2-dichloro-1,2-difluoroethylene (i.e., CFO-1112) and, optionally, an additional component. The present application further provides use of the compositions provided herein in cleaning, solvent, carrier fluid, and deposition applications. 1. A process for dissolving a solute , comprising contacting and mixing said solute with a sufficient quantity of a composition comprising:i) 1,2-dichloro-1,2-difluoroethylene, and, optionally,ii) a compound selected from N-pentane, HFE-7000, R-1233xfB, R-1336mzzZ, dimethoxymethane, R-1345mzzE, R-43-10mee, R-365mfc, tetrahydrofuran, and R-153-10mzzy.2. The process of claim 1 , wherein the solute comprises rosin flux claim 1 , oil claim 1 , or a mixture thereof.3. The process of claim 2 , wherein the rosin flux is selected from RMA (rosin mildly activated) claim 2 , RA (rosin activated) claim 2 , WS (water soluble) claim 2 , and OA (organic acid) rosin flux claim 2 , or any mixture thereof.4. The process of claim 2 , wherein the oil is selected from mineral oil claim 2 , motor oil claim 2 , silicone oil claim 2 , a fluorinated oil claim 2 , or any mixture thereof.5. (canceled)6. A process of cleaning a surface claim 2 , comprising contacting with said surface a composition comprising:i) 1,2-dichloro-1,2-difluoroethylene, and, optionally,ii) a compound selected from N-pentane, HFE-7000, R-1233xfB, R-1336mzzZ, dimethoxymethane, R-1345mzzE, R-43-10mee, R-365mfc, tetrahydrofuran, and R-153-10mzzy.7. The process of claim 6 , wherein the contacting comprises immersing the surface in a container comprising the composition claim 6 , spraying the surface with the composition claim 6 , wiping the surface with a material that has been wet with the composition claim 6 , or any combination thereof.8. The process of claim 7 , wherein the surface is an integrated circuit device.9. The process of claim 8 , wherein the integrated circuit device is a circuit board.10. The process of claim 7 , ...

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Номер записи: 14
03-02-2022 дата публикации

Cleaning liquid composition

Номер: US20220033744A1
Автор: Areji TAKANAKA
Принадлежит: Kanto Chemical Co Inc

An object of the present invention is to provide a cleaning liquid that effectively removes in a short time organic residues and abrasive grains derived from a slurry in a semiconductor substrate in which a Co contact plug and/or Co wiring are present.The present invention relates to a cleaning liquid composition for cleaning a substrate having a Co contact plug and/or Co wiring, which contains one or more reducing agents and water. Furthermore, the present invention relates to a cleaning liquid composition for cleaning a substrate having Co and not having Cu, which contains one or more reducing agents and water and has a pH of 3 or more and less than 12.

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Номер записи: 15
03-02-2022 дата публикации

Method and Apparatus for Cleaning Printing Cylinders

Номер: US20220033745A1
Автор: Arkenljung Ulf, Hansson Birger, MAIER Martin
Принадлежит:

A cleaning fabric wound on a roll () is use for cleaning printing cylinders () of a printing system (). The cleaning fabric () includes a liquid absorbable material configured to be soaked with a cleaning liquid containing a polar additive configured to make the cleaning liquid polar. The roll () of cleaning fabric () is included in a cleaning cassette () which is movable between an idle position out of contact with the printing cylinders, and an active position in which the cleaning fabric () included in the cassette () is in contact with a printing cylinder to be cleaned. 1. A roll and bag assembly comprising:a roll of cleaning fabric, the cleaning fabric being adapted and configured for cleaning printing cylinders of a printing system, said cleaning fabric comprising a liquid absorbable material soaked with a cleaning liquid, wherein said cleaning liquid comprises a polar additive containing at least one of either a glycol ether and a long-chain alcohol, wherein said cleaning liquid comprises the polar additive in a range of 50-90 wt %, wherein said polar additive is a compound comprising 10-16 carbon atoms, wherein said polar additive is configured to make the cleaning liquid polar; and wherein said cleaning fabric is wrapped around a core to form said roll; anda removable sealing bag, the removable sealing bag being tubular and built up by a multi-layer plastic film;wherein the roll of cleaning fabric is vacuum packed in the removable sealing bag to form the assembly.2. The roll and bag assembly according to claim 1 , wherein said roll is adapted and configured to receive the cleaning fabric soaked with said cleaning liquid before the cleaning fabric is wrapped around said core to form the roll.3. The roll and bag assembly according to claim 1 , wherein said roll is adapted and configured to receive the cleaning fluid with the cleaning fabric wrapped around said core.45.-. (canceled)6. A cleaning cassette comprising:a roll of cleaning fabric, the cleaning ...

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Номер записи: 16
19-01-2017 дата публикации

SEMICONDUCTOR ELEMENT CLEANING LIQUID AND CLEANING METHOD

Номер: US20170015955A1
Автор: OIE Toshiyuki, SHIMADA Kenji
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

The present invention makes it possible to provide a semiconductor element cleaning method that is characterized in that: a hard mask pattern is formed on a substrate that has a low relative permittivity film and at least one of a cobalt, a cobalt alloy, or a tungsten plug; and a cleaning liquid that contains 0.001-20% by mass of an alkali metallic compound, 0.1-30% by mass of quaternary ammonium hydroxide, 0.01-60% by mass of a organic water-soluble solvent, 0.0001-0.1% by mass of hydrogen peroxide, and water is subsequently used on a semiconductor element in which, using the hard mask pattern as a mask, the hard mask, the low relative permittivity film, and a barrier insulating film are dry etched, and dry etch residues are removed. 1. A method for cleaning a semiconductor element which is obtained by forming a hardmask pattern on a substrate that has a low-dielectric-constant film and at least one of cobalt , a cobalt alloy and a tungsten plug , and then subjecting a hardmask , the low-dielectric-constant film and a barrier insulating film to a dry etching treatment using said hardmask pattern as a mask , the method comprising the step of removing dry etch residues with a cleaning liquid containing 0.001-20% by mass of an alkali metal compound , 0.1-30% by mass of a quaternary ammonium hydroxide , 0.01-60% by mass of an organic water-soluble solvent , 0.0001-0.1% by mass of hydrogen peroxide and water.2. The method according to claim 1 , wherein the alkali metal compound is at least one or more selected from the group consisting of sodium hydroxide claim 1 , sodium sulfate claim 1 , sodium carbonate claim 1 , sodium hydrogen carbonate claim 1 , sodium nitrate claim 1 , sodium fluoride claim 1 , sodium chloride claim 1 , sodium bromide claim 1 , sodium iodide claim 1 , potassium hydroxide claim 1 , potassium sulfate claim 1 , potassium carbonate claim 1 , potassium hydrogen carbonate claim 1 , potassium nitrate claim 1 , potassium fluoride claim 1 , potassium ...

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Номер записи: 17
19-01-2017 дата публикации

WASHING HYDROGEN WATER PRODUCING METHOD AND PRODUCING APPARATUS

Номер: US20170015956A1
Автор: CHEOL Hwang Du, JIZAIMARU Takayuki, WANG David H.
Принадлежит:

A method of producing washing hydrogen water in an embodiment, includes: a step of storing ammonia water in a first tank; a step of transferring the ammonia water from the first tank to a second tank; a step of diluting the transferred ammonia water with ultrapure water in the second tank; a step of mixing the diluted ammonia water into hydrogen water; and a washing step of washing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank. 1. A method of producing washing hydrogen water , the method comprising:storing ammonia water in a first tank;transferring the ammonia water from the first tank to a second tank;diluting the transferred ammonia water with ultrapure water in the second tank;mixing the diluted ammonia water into hydrogen water; andwashing an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.2. The method of claim 1 , further comprising:measuring the ammonia water in the first tank.3. An apparatus of producing washing hydrogen water claim 1 , the apparatus comprising:a hydrogen water generating unit configured to dissolve hydrogen gas in ultrapure water;a first tank configured to store ammonia water;a second tank connected to a lower part of the first tank via a first pipeline, and configured to dilute the ammonia water supplied from the first tank via the first pipeline with ultrapure water;a third tank connected to a lower part of the second tank via a second pipeline, and configured to store the diluted ammonia water supplied from the second tank via the second pipeline;a mixing unit configured to mix the diluted ammonia water from the third tank into the hydrogen water to generate washing hydrogen water; anda washing unit configured to wash an inside of the first tank by ultrapure water to remove fine particles derived from ammonia generated in the first tank.4. The apparatus according to claim 3 , further comprising: ...

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Номер записи: 18
15-01-2015 дата публикации

POST CHEMICAL-MECHANICAL-POLISHING (POST-CMP) CLEANING COMPOSITION COMPRISING A SPECIFIC SULFUR-CONTAINING COMPOUND AND A SUGAR ALCOHOL OR A POLYCARBOXYLIC ACID

Номер: US20150018261A1
Автор: Li Yuzhuo, Venkataraman Shyam Sundar, Zhong Mingjie
Принадлежит: BASF SE

A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) at least one compound comprising at least one thiol (—SH), thioether (—SR) or thiocarbonyl (>C═S) group, wherein Ris alkyl, aryl, alkylaryl or arylalkyl, (B) at least one sugar alcohol which contains at least three hydroxyl (—OH) groups and does not comprise any carboxylic acid (—COOH) or carboxylate (—COO—) groups, and (C) an aqueous medium. 1. A post chemical-mechanical-polishing (post-CMP) cleaning composition , comprising:{'sup': 1', '1, '(A) at least one compound comprising at least one thiol (—SH), thioether (—SR) or thiocarbonyl (>C═S) group, wherein Ris alkyl, aryl, alkylaryl or arylalkyl,'}(B) erythritol, threitol, a stereoisomer thereof, or a mixture thereof, and(C) an aqueous medium.2. The composition according to claim 1 , wherein the compound (A) further comprises at least one amino (—NH claim 1 , —NHR claim 1 , or —NRR) group claim 1 , and wherein{'sup': 1', '2', '3', '4, 'R, R, Rand Rare, independently from each other, alkyl, aryl, alkylaryl, or arylalkyl.'}3. The composition according to claim 2 , wherein the compound (A) is thiourea or a derivative thereof.4. The composition according to claim 2 , wherein compound (A) is an amino acid comprising at least one thiol (—SH) claim 2 , thioether (—SR) group claim 2 , or a derivative thereof claim 2 ,{'sup': '1', 'wherein Ris alkyl, aryl, alkylaryl or arylalkyl.'}5. The composition according to claim 4 , wherein the compound (A) is cysteine claim 4 , cystine claim 4 , glutathione claim 4 , N-acetylcysteine claim 4 , or a derivative thereof.6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. The composition according to claim 1 , wherein the composition further comprises(D) at least one metal chelating agent.13. The composition according to claim 12 , wherein at least one metal chelating agent (D) is selected from the group consisting of propane-1 claim 12 ,2 claim 12 ,3-tricarboxylic acid ...

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Номер записи: 19
21-01-2016 дата публикации

WET CLEANING OF A CHAMBER COMPONENT

Номер: US20160017263A1
Автор: Baluja Sanjeev, Duan Ren-Guan, RAJ Daemian, Rocha-Alvarez Juan Carlos, TUREVSKY Inna
Принадлежит:

Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NHF and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NHF and about by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.

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Номер записи: 20
16-01-2020 дата публикации

INK AND CLEANING LIQUID SET, INKJET PRINTING DEVICE, INKJET PRINTING METHOD, AND METHOD OF CLEANING NOZZLE SURFACE OF INKJET DISCHARGING HEAD

Номер: US20200016898A1
Автор: KOIZUKA Yuusuke, KUDO Masaki, Matsuyama Akihiko, OYAMA Koichiro, SAGARA Amika, YOKOHAMA Yuuki
Принадлежит:

An ink and cleaning liquid set includes an ink comprising a coloring material and a resin and a cleaning liquid comprising water and at least one type of organic solvent, wherein the ink in a dried form has a glass transition temperature of from 40 to 90 degrees C. and the swelling ratio calculated from a mass of a film of the ink in a dried form before and after immersion in the cleaning liquid is 10 percent or greater according to the following relationship 1: swelling ratio (percent)=100×[(B−A)/A] Relationship 1, where A represents the mass of the film before the immersion and B represents the mass of the film after the immersion. 1. An ink and cleaning liquid set comprising:an ink comprising a coloring material and a resin; anda cleaning liquid comprising water and at least one type of organic solvent,wherein the ink in a dried form has a glass transition temperature of from 40 to 90 degrees C., {'br': None, 'i': B−A', 'A, 'swelling ratio (percent)=100×[()/]\u2003\u2003Relationship 1'}, 'wherein a swelling ratio calculated from a mass of a film of the ink in a dried form before and after immersion in the cleaning liquid is 10 percent or greater according to the following relationship 1where A represents the mass of the film before the immersion and B represents the mass of the film after the immersion.2. The ink and cleaning liquid set according to claim 1 , wherein the swelling ratio is 14 percent or greater.3. The ink and cleaning liquid set according to claim 1 , wherein the resin has a glass transition temperature of 60 degrees C. or higher.4. The ink and cleaning liquid set according to claim 1 , wherein the at least one type of organic solvent comprises an organic solvent having a hydrogen bond term of 4.5 or less of Hansen solubility parameter (HSP) accounting for 10 percent by mass or more of the at least one type of organic solvent in the cleaning liquid.5. The ink and cleaning liquid set according to claim 1 , wherein the resin comprises an acrylic ...

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Номер записи: 21
17-01-2019 дата публикации

CLEANING COMPOSITION FOR LIQUID CRYSTAL ALIGNMENT LAYER AND MANUFACTURING METHOD OF LIQUID CRYSTAL ALIGNMENT LAYER USING THE SAME

Номер: US20190016998A1
Автор: Han Hee, JO Jung Ho, KWON Soon Ho, PARK Hang Ah, YOON Jun Young, YUN Hyeong Seuk
Принадлежит: LG CHEM, LTD.

The present invention relates to a cleaning composition for a liquid crystal alignment layer, a manufacturing method of a liquid crystal alignment layer using the same, and a liquid crystal display device including the liquid crystal alignment layer manufactured by the manufacturing method. More specifically, the present invention relates to a cleaning composition for a liquid crystal alignment layer that is capable of solving a non-uniformity problem of the liquid crystal alignment layer and effectively removing an ionic byproduct on a polymer surface to increase anisotropy of the liquid crystal alignment layer, by using a cleaning composition including a specific solvent in a cleaning process after a UV alignment process, and a manufacturing method of a liquid crystal alignment layer. 1. A cleaning composition for a liquid crystal alignment layer comprising:tetrahydrofurfuryl alcohol or methyl 2-hydroxyisobutyrate,wherein the cleaning composition for a liquid crystal alignment layer is used for cleaning a UV-aligned liquid crystal alignment layer including polyimide or a polyimide precursor.2. The cleaning composition for a liquid crystal alignment layer of claim 1 , further comprising:at least one compound selected from the group consisting of an alkylene glycol-based compound having a viscosity of 10 cP or less and a boiling point of at least 150° C. or more and a polar solvent having a viscosity of 5 cP or less and a boiling point of at least 100° C. or more.3. The cleaning composition for a liquid crystal alignment layer of claim 1 , wherein:the cleaning composition includesa) 100 wt % of the tetrahydrofurfuryl alcohol or the methyl 2-hydroxyisobutyrate, orb) 1 to 99 wt % of the compound a); and 0.1 to 99 wt % of at least one compound selected from the group consisting of an alkylene glycol-based compound and a polar solvent.4. The cleaning composition for a liquid crystal alignment layer of claim 1 , further comprising:1 to 70 wt % of deionized water.5. The ...

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Номер записи: 22
17-01-2019 дата публикации

CLEANING COMPOSITION

Номер: US20190016999A1
Автор: De Binod B., Dimov Ognian N., Malik Sanjay, Naiini Ahmad A., Reinerth William A., Sakamuri Raj
Принадлежит:

This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent; (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water. 1. A composition , comprising:(a) 0.5-25 percent by weight an alkaline compound;(b) 1-25 percent by weight an alcohol amine compound;(c) 0.1-20 percent by weight a hydroxylammonium compound;(d) 5-95 percent by weight an organic solvent;(e) 0.1-5 percent by weight a corrosion inhibitor compound; and(f) 2-25 percent by weight water.2. The composition of claim 1 , wherein the alkaline compound is selected from the group consisting of tetramethyl ammonium hydroxide (TMAH) claim 1 , 2-hydroxyltrimethyl ammonium hydroxide claim 1 , tetraethyl ammonium hydroxide (TEAH) claim 1 , tetrapropyl ammonium hydroxide (TPAH) claim 1 , tetrabutyl ammonium hydroxide (TBAH) claim 1 , and a mixture thereof.3. The composition of claim 1 , wherein the alcohol amine compound is selected from the group consisting of monoethanolamine (MEA) claim 1 , diethanolamine claim 1 , triethanolamine claim 1 , 2-(2-aminoethoxy)ethanol claim 1 , monoisopropanolamine claim 1 , diisopropanolamine claim 1 , triisopropanolamine claim 1 , N-methyldiethanolamine claim 1 , N-ethylethanolamine claim 1 , N-butyl ethanolamine claim 1 , diethanolamine claim 1 , diglycolamine. 2-(2-aminoethoxy)ethanol claim 1 , N claim 1 ,N-dimethylethanolamine claim 1 , N claim 1 ,N-diethylethanolamine claim 1 , N claim 1 ,N-dibutylethanolamine claim 1 , N-methyl-N-ethyl ethanolamine and a mixture of thereof.4. The composition of claim 1 , wherein the hydroxylammonium compound is selected from the group consisting of hydroxylammonium sulfate claim 1 , hydroxylammonium hydrochloride claim 1 , hydroxylammonium nitrate claim 1 , and ...

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Номер записи: 23
21-01-2016 дата публикации

POST-CMP REMOVAL USING COMPOSITIONS AND METHOD OF USE

Номер: US20160020087A1
Автор: Barnes Jeffrey A., Chang Jason, Cooper Emanuel I., Liu Jun, Sun Laisheng, THOMAS Elizabeth
Принадлежит: ENTEGRIS, INC.

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The amine-free composition preferably includes at least one oxidizing agent, at least one complexing agent, at least one basic compound, and water and has a pH in the range from about 2.5 to about 11.5. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

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Номер записи: 24
19-01-2017 дата публикации

METHOD FOR CLEANING LANTHANUM GALLIUM SILICATE WAFER

Номер: US20170018424A1
Автор: Li Dongmei, LI Xiaojing, Liang Shengfa, Liu Ming, Xie Changqing, ZHANG Hao, Zhou Lei
Принадлежит: Institute of Microelectronics, Chinese Academy of

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect. 1. A method for cleaning a lanthanum gallium silicate wafer which comprises the following steps:{'b': '1', 'at a step of , a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave;'}{'b': '2', 'at a step of , the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning;'}{'b': '3', 'at a step of , a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave;'}{'b': '4', 'at a step of , the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and'}{'b': '5', 'at a step of , the rinsed and dried wafer is placed in an oven to be baked.'}21. The ...

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Номер записи: 25
16-01-2020 дата публикации

CLEANING SOLUTION COMPOSITION

Номер: US20200017801A1
Автор: Ohwada Takuo, TAKANAKA Areji, TANIGUCHI Yumiko
Принадлежит:

Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO, SiN, Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7. 1. A cleaning solution composition for cleaning a semiconductor substrate or glass substrate surface , comprising one or more inorganic acids that contain fluorine atoms within their structure or salts thereof , water , one or more reducing agent , and one or more anionic surfactants , and having hydrogen ion concentration (pH) of less than 7.2. The cleaning solution composition of claim 1 , wherein the inorganic acid that contains fluorine atoms within its structure is hydrofluoric acid claim 1 , hexafluorosilicic acid or hexafluoroboric acid or combinations thereof.3. The cleaning solution composition of claim 1 , wherein the salt of the inorganic acid that contains fluorine atoms is an ammonium salt claim 1 , amine salt or quaternary ammonium salt or combination thereof.4. The cleaning solution composition of claim 1 , wherein the reducing agent is selected from a group consisting of five- or six-membered cyclic compounds having two or more hydroxyl groups.5. The cleaning solution composition of claim 4 , wherein five- or six-membered cyclic compound having two or more hydroxyl groups is ascorbic acid claim 4 , catechol claim 4 , resorcinol claim 4 , hydroquinone claim 4 , pyrogallol or methylcatechol.6. The cleaning solution ...

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Номер записи: 26
16-01-2020 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SUBSTRATE

Номер: US20200020522A1
Автор: LEE Chung-Chieh
Принадлежит:

In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate. 1. A method of cleaning a substrate , comprising:applying a solution including a size-modification material on a substrate from a nozzle, while the substrate being rotated, on which particles to be removed are disposed;generating, on the substrate, size-modified particles having a larger size than the particles to be removed, from the particles disposed on the substrate and the size-modification material; andremoving the size-modified particles from the substrate,wherein the size-modification material includes a silane coupling agent.2. The method of claim 1 , wherein the removing the size-modified particles from the substrate includes applying an organic solvent while the substrate being rotated.3. The method of claim 1 , wherein the removing the size-modified particles from the substrate includes applying an aqueous solution including NHOH and HOwhile the substrate being rotated.4. The method of claim 1 , wherein the silane coupling agent has a general formula SiX(OR) claim 1 , where X is functional group coupled to Si and R is an alkoxy group.5. The method of claim 1 , wherein X is one selected from the group consisting of vinyl claim 1 , epoxy claim 1 , methacryloxy claim 1 , acryloxy claim 1 , amino and mercapto.6. The method of claim 1 , wherein the alkoxy group is one selected from the group consisting of methoxy claim 1 , ethoxy claim 1 , dialkoxy and trialkoxy.7. The method of claim 1 , wherein the functional group X is directly bonded to Si.8. The method of claim 1 , wherein the functional group X is connected by an alkyl chain having a carbon number less than 18.9. The method of claim 8 , wherein the alkyl ...

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Номер записи: 27
10-02-2022 дата публикации

HYDROFLUOROOLEFINS AND METHODS OF USING SAME

Номер: US20220041532A1
Автор: Bulinski Michael J., Costello Michael G., Coughlin Forrest A., Ren Hui, Smith Sean M.
Принадлежит:

A hydrofluoroolefin compound represented by the following general formula (II): Formula (II) where Rf is a linear, branched, or cyclic perfluoroalkyl group having 1-6 carbon atoms, and optionally comprises at least one catenated heteroatom selected from nitrogen or oxygen; n is 0 or 1; X is Cl or Br; with the following proviso: when Rf is CF3, then n is 1. 1. A hydrofluoroolefin compound represented by the following general formula (II):{'br': None, 'sub': f', 'n, 'R(CFH)CF═CHX\u2003\u2003(II)'}{'sub': 'f', 'where Ris a linear, branched, or cyclic perfluoroalkyl group having 1-6 carbon atoms, and optionally comprises at least one catenated heteroatom selected from nitrogen or oxygen;'}n is 0 or 1;X is Cl or Br;with the following proviso:{'sub': 'f', 'when Ris CF3, then n is 1.'}2. The hydrofluoroolefin compound of claim 1 , wherein the hydrofluoroolefin compound has the following general formula (IIA):{'br': None, 'RfCF═CHCl\u2003\u2003(IIA)'}{'sub': 'f', 'where Ris a linear, branched, or cyclic perfluoroalkyl group having 2-6 carbon atoms, and optionally comprises at least one catenated heteroatom selected from nitrogen or oxygen.'}3. The hydrofluoroolefin compound of claim 1 , wherein the hydrofluoroolefin compound has the following general formula (IIB):{'br': None, 'RfCF═CHCl\u2003\u2003(IIB)'}{'sub': 'f', 'where Ris a perfluoroalkyl group having 2-3 carbon atoms.'}4. The hydrofluoroolefin compound of claim 1 , wherein the hydrofluoroolefin compound has the following general formula (IIC):{'br': None, 'RfCF═CHBr\u2003\u2003(IIC)'}{'sub': 'f', 'where Ris a linear, branched, or cyclic perfluoroalkyl group having 2-6 carbon atoms, and optionally comprises at least one catenated heteroatom selected from nitrogen or oxygen.'}5. The hydrofluoroolefin compound of claim 1 , wherein the hydrofluoroolefin compound has the following general formula (IID):{'br': None, 'RfCF═CHBr\u2003\u2003(IID)'}{'sub': 'f', 'where Ris a perfluoroalkyl group having 2-3 carbon atoms.'}6. ...

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Номер записи: 28
10-02-2022 дата публикации

CLEANING COMPOSITIONS FOR CLEANING HARD SURFACES

Номер: US20220041958A1
Автор: CHEN Zhitao, HONG Jing, LI Rong
Принадлежит:

The disclosure provides a cleaning composition for cleaning a hard surface, comprising: a) an oil and/or fat, wherein the oil and/or fat is from 1% to 20% by weight based on a total weight of the composition; b) a polyol; c) a surfactant, wherein a weight ratio of the surfactant to the oil and/or fat is equal to or greater than 1:5. The disclosure further relates to a method of preparing the cleaning composition and uses thereof. 1. A cleaning composition for cleaning a hard surface , comprising:a) an oil and/or fat, wherein the oil and/or fat is from 1% to 20% by weight based on a total weight of the composition;b) a polyol;c) a surfactant selected from the group consisting of sucrose esters, polyglycerides, polysorbates and combinations thereof,wherein a weight ratio of the surfactant to the oil and/or fat is equal to or greater than 1:5.2. The cleaning composition of claim 1 , wherein the surfactant is selected from the group consisting of polyglycerol monolaurates claim 1 , sucrose laurates claim 1 , Tweens and combinations thereof.3. The cleaning composition of claim 1 , wherein the surfactant is from 0.5% to 5% by weight based on the total weight of the composition.4. The cleaning composition of claim 1 , wherein the composition further comprises water.5. The cleaning composition of claim 4 , wherein the water is equal to or less than 5 wt % based on the total weight of the composition.6. The cleaning composition of claim 1 , wherein the polyol is glycerol.7. The cleaning composition of claim 1 , wherein the composition comprises:a) the oil and/or fat in an amount of 5-10 wt % based on the total weight of the composition;b) glycerol;c) the surfactant in an amount of 1-5 wt % based on the total weight of the composition;d) water in an amount of 0-2 wt % based on the total weight of the composition.8. A method of preparing the cleaning composition of claim 1 , comprising:a) mixing the surfactant with the polyol to form a first phase;b) preparing a second phase ...

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Номер записи: 29
24-01-2019 дата публикации

Method for Cleaning a Medical or Dental Instrument

Номер: US20190024022A1
Автор: Coquillat Julien
Принадлежит: NOVOZYMES A/S

The invention concern compositions and methods that are effective at removing the soils on medical and dental instruments. The disclosed compositions provide improved cleaning compared to known enzymatic compositions for cleaning medical and dental instruments. 1. A method for cleaning a medical or dental instrument comprising: i) from 0.001% w/w to 1% w/w of a protease, and', 'ii) from 0.001% w/w to 1% w/w of a peptide aldehyde protease stabilizer;, '(a) soaking the medical or dental instrument in an aquous composition comprising'}(b) optionally washing the instrument with a liquid detergent composition; and(c) rinsing the instrument; i) H is hydrogen;', 'ii) B0 is a single amino acid residue with L- or D-configuration of the formula —NH—CH(R)—C(═O)—;', 'iii) B1 and B2 are independently single amino acid residues;', 'iv) B3 is a single amino acid residue, or is absent;', 'v) R is independently selected from the group consisting of C1-6 alkyl, C6-10 aryl or C7-10 arylalkyl optionally substituted with one or more, identical or different, substituents R′;', 'vi) R′ is independently selected from the group consisting of halogen, —OH, —OR″, —SH, —SR″, —NH2, —NHR″, —NR″2, —CO2H, —CONH2, —CONHR″, —CONR″2, —NHC(═N)NH2;', 'vii) R″ is a C1-6 alkyl group;', 'viii) P is an N-terminal protection group; and', 'ix) M is H or an alkali metal, preferably Na or K., 'wherein the peptide aldehyde protease stabilizer has the formula P—B3-B2-B1-B0-H or a hydrosulfite adduct thereof having the formula P—B3-B2-B1-N(H)—CHR—CHOH—SO3M, wherein'}2. The method of claim 1 , wherein the protease is a subtilisin.3. The method of or claim 1 , wherein the medical or dental instrument is soaked in the aquous composition in (a) for a time sufficient to reduce soil on the instrument claim 1 , preferably for at least 1 minute.4. The method of claim 1 , wherein the detergent composition in (b) consists of a surfactant and other ingredients used in detergent and cleaning compositions.5. The method of ...

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Номер записи: 30
23-01-2020 дата публикации

COMPOSITION FOR SURFACE TREATMENT, METHOD FOR PRODUCING THE SAME, SURFACE TREATMENT METHOD USING COMPOSITION FOR SURFACE TREATMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

Номер: US20200024547A1
Автор: ISHIDA Yasuto, ONISHI SHOGO, YOSHINO Tsutomu, Yoshizaki Yukinobu
Принадлежит: FUJIMI INCORPORATED

An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. 1. A composition for surface treatment comprising:a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphonic acid (salt) group, and an amino group; andwater, whereinpH is less than 7, and [{'br': None, '[Mathematical Formula 1]'}, {'br': None, 'Ionic functional group density (%)=100×(Number of constituent unit derived from monomer having ionic functional group/Number of constituent unit derived from polymer compound) \u2003\u2003Formula (1)'}], 'the polymer compound has a pKa of 3 or less and an ionic functional group density represented by the following formula (1)of more than 10%.2. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a copolymer comprising a constituent unit having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group and an amino group and another constituent unit.3. The composition for surface treatment according to claim 2 , wherein the other constituent unit comprises a constituent unit derived from an ethylenically unsaturated monomer.4. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a homopolymer consisting of only a constituent unit having at least one acid functional group selected from the group consisting of a sulfonic acid (salt) group claim 1 , a phosphoric acid (salt) group claim 1 , and a phosphonic acid (salt) group.5. The composition for surface treatment according to claim 1 , wherein the polymer compound comprises a polymer compound having a sulfonic acid (salt) group.6. The composition for surface treatment according to claim 5 , wherein a polymer compound having the sulfonic acid (salt) group is at least one ...

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Номер записи: 31
23-01-2020 дата публикации

CLEANING COMPOSITION WITH CORROSION INHIBITOR

Номер: US20200024554A1
Автор: Frye Donald, Liu Jun, THOMAS Elizabeth, WANG Chao-Yu, WHITE Daniela, WHITE Michael
Принадлежит:

A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal. 1. A cleaning composition effective to clean a microelectronic device substrate , the cleaning composition comprising:water,base to provide a pH of at least 8,cleaning compound, andcorrosion inhibitor selected from: a guanidine functional compound, a pyrazolone functional compound, and a hydroxyquinoline compound.2. A cleaning composition of claim 1 , wherein the corrosion inhibitor is selected from:a guanidine functional compound selected from dicyandiamide, guanylurea, a guanidine salt, and glycocyamine,a pyrazolone functional compound selected from 2-methyl-3-butyn-2-ol, 3-methyl-2-pyrazolin-5-one, 3-methyl-1-4(sulfophenyl)-2-pyrazolin-5-one, 3-methyl-1-p-tolyl-5-pyrazolone, anda hydroxyquinoline compound selected from: 8-hydroxyquinoline, 8-hydroxyquinoline-2-carboxylic acid, 5-chloro7-iodo-quinolin-8-ol, 5,7-dichloro-2-[(dimethylamino)methyl)quinolin-8-ol, 8-hydroxyquinoline-4-carbaldehyde, 8-hydroxyquinoline-4-carbaldehyde-oxime, 8-hydroxyquinoline-5-sulfonic acid monohydrate3. A cleaning composition of claim 1 , wherein the base is selected from: choline hydroxide claim 1 , tetraethylammonium hydroxide claim 1 , tetramethylammonium hydroxide claim 1 , a quaternary ammonium compound claim 1 , and a combination thereof.4. A cleaning composition of claim 1 , wherein the cleaning compound is an alkanol amine.5. A cleaning composition of claim 1 , wherein the corrosion inhibitor is a guanine.6. A cleaning composition of claim 1 , wherein the corrosion ...

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Номер записи: 32
28-01-2021 дата публикации

WASHING METHOD, MANUFACTURING METHOD, AND WASHING DEVICE FOR POLYCRYSTALLINE SILICON

Номер: US20210024858A1
Автор: KAWAGUCHI Kazuhiro, TASAKI Hiroyuki
Принадлежит:

In an embodiment of the present invention, contaminants contained in polycrystalline silicon are removed to obtain highly-pure polycrystalline silicon, with only a small amount of etching. Polycrystalline silicon is washed with use of: a first washing step of bringing fluonitric acid into contact with the polycrystalline silicon; and a second washing step of bringing a non-oxidizing chemical containing hydrofluoric acid into contact with the polycrystalline silicon that has undergone the first washing step. 1. A method of washing polycrystalline silicon , comprising:a first washing step of bringing fluonitric acid into contact with polycrystalline silicon; anda second washing step of bringing a non-oxidizing chemical containing hydrofluoric acid into contact with the polycrystalline silicon that has undergone the first washing step.2. The method according to claim 1 , further comprising a third washing step in which an oxide layer is formed on a surface of the polycrystalline silicon that has undergone the second washing step.3. The method according to claim 2 , wherein in the third washing step claim 2 , fluonitric acid is brought into contact with the polycrystalline silicon.4. The method according to claim 1 , wherein the non-oxidizing chemical contains hydrogen fluoride in an amount of 1% by mass to 10% by mass.5. A method of producing polycrystalline silicon claim 1 , comprising: the method of washing according to as one step.6. A device for washing polycrystalline silicon claim 1 , comprising:a first washing section that brings fluonitric acid into contact with polycrystalline silicon; anda second washing section that brings a non-oxidizing chemical containing hydrofluoric acid into contact with the polycrystalline silicon that has undergone treatment by the first washing section. The present invention relates to a method of washing polycrystalline silicon, a method of producing polycrystalline silicon, and a washing device for polycrystalline silicon. ...

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Номер записи: 33
04-02-2016 дата публикации

COPPER CLEANING AND PROTECTION FORMULATIONS

Номер: US20160032221A1
Автор: Barnes Jeffrey A., Benac Brian, Boggs Karl E., FENG Lin, Liu Jun, Petruska Melissa A., Yan Xiaodong, Zhang Peng
Принадлежит:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. 1. A cleaning composition comprising at least one solvent , at least one corrosion inhibitor , at least one amine , and at least one quaternary base , wherein the corrosion inhibitor comprises a species selected from the group consisting of: ribosylpurines and methylated or deoxy derivatives thereof;degradation products of adenosine and adenosine derivatives; purine-saccharide complexes; methylated or deoxy purine derivatives, and reaction or degradation products thereof; and combinations thereof.2. The cleaning composition of claim 1 , wherein the at least one corrosion inhibitor comprises a species selected from the group consisting of: N-ribosylpurine claim 1 , adenosine claim 1 , guanosine claim 1 , 2-aminopurine riboside claim 1 , 2-methoxyadenosine claim 1 , N-methyladenosine claim 1 , N claim 1 ,N-dimethyladenosine claim 1 , trimethylated adenosine claim 1 , trimethyl N-methyladenosine claim 1 , C-4′-methyladenosine claim 1 , 3-deoxyadenosine; adenine claim 1 , methylated adenine claim 1 , dimethylated adenine claim 1 , N4 claim 1 ,N4-dimethylpyrimidine-4 claim 1 ,5 claim 1 ,6-triamine claim 1 , 4 claim 1 ,5 claim 1 ,6-triaminopyrimidine claim 1 , allantoin claim 1 , hydroxylated C—O—O—C dimers claim 1 , C—C bridged dimers claim 1 , ribose claim 1 , methylated ribose claim 1 , tetramethylated ribose claim 1 , xylose claim 1 , glucose claim 1 , purine claim 1 , guanine claim 1 , hypoxanthine claim 1 , xanthine claim 1 , theobromine claim 1 , caffeine claim 1 , uric acid claim 1 , ...

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Номер записи: 34
04-02-2016 дата публикации

CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD

Номер: US20160032227A1
Автор: MOCHIDA Kenji, SHIMA Motoyuki
Принадлежит: JSR Corporation

A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C. 1. A cleaning composition for a semiconductor substrate comprising:a solvent; anda polymer comprising a fluorine atom, a silicon atom or a combination thereof.2. The cleaning composition according to claim 1 , wherein a content of water in the solvent is no greater than 20% by mass.3. The cleaning composition according to claim 1 , further comprising an organic acid which is a non-polymeric acid.4. The cleaning composition according to claim 3 , wherein the organic acid is a polyhydric carboxylic acid.5. The cleaning composition according to claim 3 , wherein an acid dissociation constant of the polymer is smaller than an acid dissociation constant of the organic acid.6. The cleaning composition according to claim 3 , wherein a solubility of the organic acid in water at 25° C. is no less than 5% by mass.7. The cleaning composition according to claim 3 , wherein the organic acid is a solid at 25° C.8. A cleaning method comprising:coating a cleaning composition on a surface of a semiconductor substrate to form a film, the cleaning composition comprising a solvent and a polymer which comprises a fluorine atom, a silicon atom or a combination thereof; andremoving the film from the substrate.9. The cleaning method according to claim 8 , wherein a content of water in the solvent is no greater than 20% by mass.10. The cleaning method according to ...

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Номер записи: 35
17-02-2022 дата публикации

SYSTEMS AND METHODS FOR CLEANING A COOLING TOWER FILL WITH A CHEMICAL GEL

Номер: US20220048079A1
Автор: Rothenhausen Mark
Принадлежит: Crossford International, LLC

A process of using a chemical gel cleaning formulation to clean a cooling tower fill, comprising the steps of applying a pre-rinse fluid to the fill; applying the chemical gel cleaning formulation to the fill, wherein the chemical gel cleaning formulation includes glycerin, at least one polysaccharide, at least one corrosion inhibitor, at least one surfactant, and at least one acid; applying a descaling fluid to the fill; applying a neutralizer solution to the fill to neutralize the pH of residual fluid on the fill surface; and rinsing the fill with a rinsing fluid to remove residual chemical gel cleaning formulation and descaling fluid, residual neutralizer solution, and dissolved deposits from the fill. 14-. (canceled)15. A process of using a chemical gel cleaning formulation to clean a cooling tower fill , comprising:a) applying a pre-rinse fluid to said fill;b) applying said chemical gel cleaning formulation to said fill, said chemical gel cleaning formulation comprising glycerin, at least one polysaccharide, at least one corrosion inhibitor, at least one surfactant, and at least one acid; andc) applying a descaling fluid to said fill, wherein the pH of said descaling fluid is selected from the group consisting of acidic and alkaline;d) applying a neutralizer solution to the fill surface to neutralize any residual chemical gel formulation on the fill surface;e) rinsing said fill with a rinsing fluid to remove residual chemical gel cleaning formulation and descaling fluid, residual neutralizer solution, and dissolved deposits from said fill;and wherein said cooling tower fill is formed of polyvinyl chloride polymer.16. A process of using a chemical gel cleaning formulation to clean a cooling tower fill , comprising:a) applying a pre-rinse fluid to said fill;b) applying said chemical gel cleaning formulation to said fill, said chemical gel cleaning formulation comprising glycerin, at least one polysaccharide, at least one corrosion inhibitor, at least one ...

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Номер записи: 36
31-01-2019 дата публикации

METHOD FOR REMOVING A METAL DEPOSIT ARRANGED ON A SURFACE IN A CHAMBER

Номер: US20190032199A1
Автор: PIALLAT Fabien, VITIELLO Julien
Принадлежит: KOBUS SAS

The invention relates to a method for removing a metal deposit () arranged on a surface () in a chamber (), said method including repeatedly performing a sequence including: a) a first phase of injecting chemical species suitable for oxidizing said metal deposit (); and b) a second phase of injecting chemical species suitable for volatilizing the oxidized metal deposit, said second phase b) being performed after the first phase a). 2. The method according to claim 1 , wherein the chemical species suitable for oxidizing the metal deposit and the chemical species suitable for volatilizing the oxidized metal deposit are respectively injected in the form of one or several pulses.3. The method according to claim 2 , wherein the duration of the injection pulse(s) ranges from 0.02 s to 5 s claim 2 , and the delay between two consecutive pulses claim 2 , if any claim 2 , ranges from 0.02 s to 10 s.4. The method according to claim 1 , wherein the sequence includes a phase between phase a) and phase b) during which no chemical species is injected into the chamber.5. The method according to claim 1 , wherein the sequence includes an at least partial chamber purging phase between phase a) and phase b).6. The method according to claim 1 , including claim 1 , between two consecutive sequences claim 1 , a step in which no chemical species is injected into the chamber and/or the chamber is at least partially purged.7. The method according to claim 1 , wherein the chamber is maintained at a temperature between 20 and 250° C. claim 1 , preferably between 20 and 150° C.8. The method according to claim 1 , wherein phase a) includes the injection of at least one of the following oxidizing species: oxygen claim 1 , ozone claim 1 , nitrous oxide.9. The method according to claim 1 , wherein the chemical species injected in phase b) include hexafluoroacetylacetone.10. The method according to claim 1 , wherein the chemical species injected in phase a) and/or in phase b) are plasma-activated. ...

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Номер записи: 37
30-01-2020 дата публикации

POST ETCH RESIDUE CLEANING COMPOSITIONS AND METHODS OF USING THE SAME

Номер: US20200032177A1
Автор: LEE Yi-Chia, Sun Laisheng, Wang Lili, WU Aiping
Принадлежит:

A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same. 1. A semiconductor substrate cleaning composition comprising water; oxalic acid , and two or more types of corrosion inhibitors selected from the following three types of corrosion inhibitors: (a) amino acids; (b) non-phenolic-type organic acids , non-phenolic-type organic acid salts or other derivatives of non-phenolic-type organic acids , and (c) phenol and derivatives of phenol.2. The cleaning composition of comprising one or more of said type (a) corrosion inhibitors and one or more of said type (b) corrosion inhibitors.3. The cleaning composition of claim 2 , wherein one or more of said type (a) corrosion inhibitors are selected from glycine claim 2 , histidine claim 2 , lysine claim 2 , alanine claim 2 , leucine claim 2 , threonine claim 2 , serine claim 2 , valine claim 2 , aspartic acid claim 2 , glutamic acid claim 2 , arginine claim 2 , cysteine claim 2 , asparagine claim 2 , glutamine claim 2 , isoleucine claim 2 , methionine claim 2 , phenylalanine claim 2 , proline claim 2 , tryptophan claim 2 , and tyrosine.4. The cleaning composition of wherein one or more of said type (b) corrosion inhibitors are selected from ascorbic acid and derivatives of ascorbic acid.5. The cleaning composition of wherein one or more of said type (b) corrosion inhibitors are selected from ascorbic acid and derivatives of ascorbic acid.6. The cleaning composition of comprising one or more of said type (a) corrosion inhibitors and one or more of said type (c) corrosion inhibitors.7. The cleaning composition of claim 6 , wherein said one or more of said type (a) corrosion inhibitors are selected from glycine claim 6 , histidine claim 6 , lysine claim 6 , alanine claim 6 , leucine claim 6 , threonine claim 6 , serine claim 6 , valine claim 6 , aspartic acid claim 6 , glutamic acid claim 6 , ...

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Номер записи: 38
09-02-2017 дата публикации

COMPOSITIONS AND METHODS USEFUL FOR REMOVING TABLET COATINGS

Номер: US20170037341A1
Автор: ALTMANN Thomas, POTOCNIK Vesna
Принадлежит:

The present invention relates to a liquid cleaning composition can be a cleaning composition for removing an acrylic-based polymeric material useful as enteric tablet coatings located on a surface of a vessel or other process equipment comprising: —diethylen glycol mono butylether; and —water. 1. A liquid cleaning composition for removing an acrylic-based polymeric material comprising:diethylen glycol mono butylether; andwater.2. The cleaning composition of claim 1 , wherein the composition comprises:diethylen glycol mono butylether,{'sub': 2', '10, 'at least one Cto Corganic acid, and'}water.3. The cleaning composition of claim 1 , wherein the weight-% ratio claim 1 , based on the total weight of the cleaning composition claim 1 , of a) the diethylen glycol mono butylether to b) the Cto Corganic acid claim 1 , preferably citric acid claim 1 , is of about 150:1 to about 30:1 claim 1 , preferably of about 100:1 to about 40:1 claim 1 , further preferred about 95:1 to about 60:1 claim 1 , and more preferred about 90:1 to about 70:1 and most preferred about 85:1 to about 80:1.4. The cleaning composition of claim 1 , wherein the composition comprises:diethylen glycol mono butylether,{'sub': 2', '10, 'at least one Cto Corganic acid, preferably citric acid,'}{'sub': 12', '14', '4, 'at least one nonionic surfactant, preferably a C-Cfatty alcohol ethoxylate C-alkylether having 10 EO units and most preferred a lauryl fatty alcohol ethoxy buthylether having about 10 EO units,'}optional at least one sequestering agent, preferably terasodium N,N-bis (carboxylatemethyl)-L-glutamate (GLDA),optional at least one corrosion inhibitor, preferably at least one benzotriazole, and most preferred at least one methyl dihydrogen phosphate and/or methyl-1H-benzotriazol; andwater.5. The cleaning composition of claim 1 , wherein the Cto Corganic acid is selected from the group comprising acetic acid claim 1 , propionic acid claim 1 , iso-propionic acid claim 1 , butanoic acid claim 1 , ...

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Номер записи: 39
09-02-2017 дата публикации

Photoresist Cleaning Composition Used in Photolithography and a Method for Treating Substrate Therewith

Номер: US20170037344A1
Автор: Chang Randy Li-Kai, Chen Hsiu Mei, Chen Tianniu, LEE Yi-Chia, LIU Wen Dar, Lo Ryback Li Chang, Matz Laura M., Meng Ling-Jen, Parris Gene Everad
Принадлежит: AIR PRODUCTS AND CHEMICALS, INC.

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith. 1. A photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 60-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) , sulfolane or dimethylsulfone or mixtures thereof , and at least one additional organic solvent or two or more additional organic solvents; (c) 0.5-15 mass % of at least one corrosion inhibitor or a mixture of two or more corrosion inhibitors; and (d) 0.5-25 mass % of water.2. The photoresist cleaning composition of claim 1 , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 82-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and at least one additional organic solvent or two or more additional organic solvents; (c) 1-5 mass % of at least one corrosion inhibitor or mixtures of two or more corrosion inhibitors; and (d) 1-10 mass % of water.3. The photoresist cleaning composition of claim 1 , wherein (b) comprises 80-96 mass % said dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and 1-4 mass % of said at least one additional organic solvent or two or more additional organic solvents; and said (c) comprises 1-5 mass %; and said (d) comprises 1-10 mass %.4. The photoresist cleaning composition of claim 2 , wherein said (c) comprises a mixture of two or more ...

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Номер записи: 40
08-02-2018 дата публикации

Composition and Method for Making Converter-Dissolver Composition for Dissolving Metal Sulfate Scales from Surfaces

Номер: US20180037805A1
Автор: Polignone Donato, Utschig-Samuels Stephen
Принадлежит: NuGeneration Technologies, LLC dba NuGenTec

A converter-dissolver composition in an aqueous solution of carbonate or bicarbonate, chelating agents, hydroxide base, and surfactant wetting agent. A mixture of the chelating agents and carbonate or bicarbonate is diluted with deionized water. The mixture reacts for five minutes. The hydroxide base is added to the mixture to form an in-situ reaction with the carbonate or bicarbonate and reacted for another five minutes. The solution pH is adjusted with the chelating agent. The surfactant wetting agent is added. The aqueous solution is heated to 70-230° C. and applied to a surface of oil or gas well and pipeline equipment with metal sulfate scales in a ratio of 3.78 liters of the aqueous solution per 0.45 kilograms of the metal sulfate scales. The aqueous solution reacts for 0.25-1.5 hours to dissolve the metal sulfate scales. The aqueous solution and dissolved metal sulfate scales are flushed from the surface. 1. A converter-dissolver composition in aqueous solution for dissolving metal sulfate scales , comprising:a carbonate or bicarbonate;a plurality of chelating agents; anda hydroxide base.2. The converter-dissolver composition of claim 1 , wherein the carbonate or bicarbonate is selected from a group consisting of alkali metal carbonates and bicarbonates claim 1 , organic carbonate or bicarbonates claim 1 , inorganic carbonates and bicarbonates claim 1 , ammonium bicarbonate claim 1 , sodium bicarbonate claim 1 , potassium bicarbonate claim 1 , choline bicarbonate claim 1 , ammonium carbonate claim 1 , sodium carbonate claim 1 , potassium carbonate claim 1 , choline carbonate claim 1 , tetramethylammonium bicarbonate claim 1 , tetraethylammonium bicarbonate claim 1 , tetrabutylammonium bicarbonate claim 1 , tetramethylammonium carbonate claim 1 , tetraethylammonium carbonate claim 1 , and tetrabutylammonium carbonate.3. The converter-dissolver composition of claim 1 , wherein a first chelating agent of the plurality of chelating agents is selected from a group ...

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Номер записи: 41
08-02-2018 дата публикации

Solvent compositions for removing petroleum residue from a substrate and methods of use thereof

Номер: US20180037850A1
Автор: Troxler Robert Ernest, Zaki Nael Naguib
Принадлежит:

A method of cleaning highway and road construction equipment is disclosed. 1placing equipment on a perforated gridspraying with a spray gun under pressure the residue containing equipmentfiltering the aqueous sludge through the grid and thus separating the insoluble contaminatescollecting the filtered aqueous sludge and preparing for recycling or disposal.. A method of cleaning highway and road construction equipment comprising: This application is a continuation of U.S. patent application Ser. No. 14/617,146 filed on Feb. 9, 2015 and entitled “Solvent compositions for removing petroleum residue from a substrate and methods of use thereof”, which is a continuation of U.S. patent application Ser. No. 13/618,074 filed on Sep. 14, 2012 and entitled “SOLVENT COMPOSITIONS FOR REMOVING PETROLEUM RESIDUE FROM A SUBSTRATE AND METHODS OF USE THEREOF”, now U.S. Pat. No. 8,951,952 issued on Feb. 10, 2015, which is a divisional of U.S. patent application Ser. No. 10/791,427 filed on Mar. 2, 2004 and entitled “Solvent compositions for removing petroleum residue from a substrate and methods of use thereof”, now U.S. Pat. No. 8,951,951 issued on Feb. 10, 2015, the disclosure of all of which is incorporated herein by reference in its entirety.The presently disclosed subject matter generally relates to solvent compositions for removing petroleum residue from a substrate and methods of use thereof. More particularly, the presently disclosed subject matter relates to water-soluble solvent compositions, which can be employed in removing petroleum residue from a substrate.The build-up of petroleum residue, such as asphalt and asphalt-related liquid, on processing equipment used in highway and road construction, as well as on equipment used in petroleum and chemical processing, storage and transport, has long been problematic. After a certain level of buildup occurs, the equipment is often no longer capable of being used for its intended purpose. Accordingly, it becomes necessary to ...

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Номер записи: 42
08-02-2018 дата публикации

POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE

Номер: US20180037852A1
Автор: Frye Donald, Liu Jun, THOMAS Elizabeth, WANG Chao-Yu, WHITE Danela, WHITE Michael
Принадлежит:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. 1. A composition comprising at least one organic amine , at least one solvent , at least one quaternary base , at least one complexing agent , optionally at least one reducing agent , optionally at least one additional etchant , and optionally at least one cleaning additive , wherein the cleaning composition is substantially devoid of alkali hydroxides , alkaline earth metal hydroxides , and tetramethylammonium hydroxide.2. The composition of claim 1 , wherein the at least one organic amine comprises a species having the general formula NRRR claim 1 , wherein R claim 1 , Rand Rmay be the same as or different from one another and are selected from the group consisting of hydrogen claim 1 , straight-chained or branched C-Calkyl claim 1 , straight-chained or branched C-Calcohol claim 1 , and straight chained or branched ethers having the formula R—O—R claim 1 , where Rand Rmay be the same as or different from one another and are selected from the group consisting of C-Calkyls.3. The composition of claim 1 , wherein the at least one organic amine comprises a species selected from the group consisting of aminoethylethanolamine claim 1 , N-methylaminoethanol claim 1 , aminoethoxyethanol claim 1 , dimethylaminoethoxyethanol claim 1 , diethanolamine claim 1 , N-methyldiethanolamine claim 1 , monoethanolamine claim 1 , triethanolamine claim 1 , 1-amino-2-propanol claim 1 , 3-amino-1-propanol claim 1 , diisopropylamine ...

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Номер записи: 43
08-02-2018 дата публикации

Metal-compound-removing solvent and method in lithography

Номер: US20180039182A1
Автор: An-Ren Zi, Ching-Yu Chang, Joy Cheng
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

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Номер записи: 44
07-02-2019 дата публикации

BUBBLE ENHANCED CLEANING METHOD AND CHEMISTRY

Номер: US20190039102A1
Автор: Erickson Anthony W., Fernholz Peter J.
Принадлежит:

A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures comprising applying a pre-treatment solution prior to the application of an override use solution. A gas generating use solution is present in either the pretreatment or the override use solution. The gas generating use solution is capable of releasing gas on and in a soil, resulting in a soil disruption effect and enhanced cleaning. 1. A method for removing a soil from an industrial surface using a CIP process , said method comprising:(a) applying a pretreatment solution comprising about 0.2 wt. % to about 3.0 wt. % of a carbon dioxide-producing salt to the surface(b) allowing the pretreatment solution to penetrate the soil;(c) applying an override use solution comprising about 1 wt. % to about 3 wt. % of an acid to the surface, wherein the application of the override use solution activates the pre treatment pretreatment solution to generate gas on and in the soil; and(d) rinsing the surfacewherein the pretreatment and override solutions are applied at a temperature in the range of about 2° C. to about 50° C.2. The method of claim 1 , wherein the soil comprises a thermally degraded soil.3. The method of claim 1 , wherein the soil comprises a high density organic soil.4. The method of claim 3 , wherein the soil is selected from the group consisting of a tomato based food soil claim 3 , a food soil containing high levels of reducing sugars claim 3 , and brewery soils.5. The method of claim 1 , wherein the surface is selected from the group consisting of tanks claim 1 , lines and processing equipment.6. The method of claim 5 , wherein the processing equipment cleaned is selected from the group consisting of a pasteurizer claim 5 , a homogenizer claim 5 , a separator claim 5 , an evaporator claim 5 , a filter claim 5 , a dryer claim 5 , a membrane claim 5 , a fermentation tank and a cooling tower.7. The method of claim 6 , wherein ...

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Номер записи: 45
08-02-2018 дата публикации

METAL-COMPOUND-REMOVING SOLVENT AND METHOD IN LITHOGRAPHY

Номер: US20180040474A1
Автор: Chang Ching-Yu, Cheng Joy, ZI An-Ren
Принадлежит:

A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material. 1. A method of fabricating a semiconductor device , comprising:rinsing a wafer with a solvent, wherein the wafer has an increased hydrophobicity as a result of being rinsed with the solvent;forming a metal-containing material over the wafer after the wafer has been rinsed with the solvent;performing one or more lithography processes at least in part using the metal-containing material; andremoving the metal-containing material during or after the performing of the one or more lithography processes, wherein the increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.2. The method of claim 1 , wherein the rinsing comprises configuring a contact angle of the solvent with respect to water.3. The method of claim 2 , wherein the configuring the contact angle comprises including an additive as a part of the solvent claim 2 , the additive having a contact angle that exceeds 75 degrees with respect to water.4. The method of claim 1 , wherein the rinsing comprises applying a carbon fluoride material as a part of the solvent.11. The method of claim 1 , wherein the forming the metal-containing material comprises forming a photoresist as the metal-containing material.12. The method of claim 11 , wherein:the forming the photoresist comprises coating an extreme ultraviolet (EUV) photoresist; andwherein the performing the one or more lithography processes comprises performing one or more EUV lithography processes.13. ...

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Номер записи: 46
24-02-2022 дата публикации

Cleaning solvent compositions exhibiting azeotrope-like behavior and their use

Номер: US20220056368A1
Автор: Venesia L. Hurtubise
Принадлежит: ZYNON TECHNOLOGIES LLC

An azeotropic cleaning solvent composition has from about 96 to about 98 weight percent 1,1,1,3,3,3-hexafluoro-2-methoxypropane (“HFMOP”) and from about 2 to about 4 weight percent acetone, for example, about 97 weight percent HFMOP and about 3 weight percent acetone. Another composition of the invention has a weight ratio of HFMOP to acetone of about 24 to about 99, for example, about 24 to 49. Conventional additives such as surfactants, lubricants and co-solvents may be present in an amount not to exceed about 10 weight percent of the composition. A method of the invention comprises contacting an article of manufacture with the solvent composition in order to clean the article of manufacture and then removing the solvent composition from the article of manufacture.

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Номер записи: 47
24-02-2022 дата публикации

CLEANING LIQUID COMPOSITION AND CLEANING METHOD USING SAME

Номер: US20220056373A1
Автор: JEONG Yong Ho, JUNG Ga Young, Kim Young Gon, PARK Kun Hee, YOON Young Ho, YOON Young Lok
Принадлежит: KCTECH CO., LTD.

The present disclosure relates to a cleaning liquid composition and a cleaning method using the same. A polishing slurry composition according to an embodiment of the present disclosure includes: a chelating agent containing an organic salt; and an anionic surfactant. 1. A cleaning liquid composition comprising:a chelating agent comprising an organic salt; andan anionic surfactant.2. The cleaning liquid composition of claim 1 , wherein the chelating agent comprises:at least one organic salt selected from a group consisting of a carboxyl group, a carbonic acid group, a phosphoric acid group, and a sulfuric acid group; oran ammonium salt thereof.3. The cleaning liquid composition of claim 2 , wherein the organic salt containing the carboxyl group comprises at least one selected from a group consisting of acetate claim 2 , citrate claim 2 , hydrogen citrate claim 2 , tartrate claim 2 , oxalate claim 2 , lactate claim 2 , benzonate claim 2 , formate claim 2 , phthalate claim 2 , and malate.4. The cleaning liquid composition of claim 2 , wherein the organic salt containing the carbonic acid group comprises at least one selected from a group consisting of carbonate claim 2 , bicarbonate claim 2 , tricarboante claim 2 , ethylcarbonate claim 2 , 2-cyanoethylcarbonate claim 2 , octadecylcarbonate claim 2 , dibutylcarbonate claim 2 , dioctadecylcarbonate claim 2 , methyldecylcarbonate claim 2 , hexamethylene iminecarbonate claim 2 , mopholinium morpholinecarbonate claim 2 , benzylcarbonate claim 2 , triethoxy silylpropylcarbonate claim 2 , pyridinium ethylhexyl bicarbonate (pyridinium ethylhexylcarbonate) claim 2 , and triethylene diaminium bicarbonate.5. The cleaning liquid composition of claim 2 , wherein the organic salt containing the phosphoric acid group comprises at least one selected from a group consisting of phosphate claim 2 , hydrogen phosphate claim 2 , diammonium hydrogen phosphate claim 2 , triammonium hydrogen phosphate claim 2 , monobutyl phosphate claim 2 , ...

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Номер записи: 48
24-02-2022 дата публикации

HYDROCHLOROFLUOROOLEFINS AND METHODS OF USING SAME

Номер: US20220056382A1
Автор: Bulinski Michael J., Costello Michael G., Coughlin Forrest A., Qiu Zai-Ming, Ren Hui, Smith Sean M.
Принадлежит:

A composition including a compound having structural formula (I): Ris a linear or branched perfluoroalkyl group having 1-3 atoms; n is 0-2; x is 1-3; and Rand Rare (i) independently, a linear or branched perfluoroalkyl group having 1-8 carbon atoms; or (ii) are bonded together to form a ring structure having 4-8 carbon atoms. The composition further includes a hydrocarbon contaminant. 2. The composition of claim 1 , wherein the hydrocarbon contaminant comprises a hydrocarbon having the formula CH claim 1 , where n is greater than 5.3. The composition of claim 2 , wherein the compound having structural formula (I) is present in the composition at an amount of at least 25% by weight based on the total weight of the composition.4. The composition of claim 2 , wherein the compound having structural formula (I) is present in the composition at an amount of at least 50% by weight based on the total weight of the composition.5. The composition of claim 2 , wherein the hydrocarbon contaminant is present in the composition at an amount of between 0.0001% and 20% by weight claim 2 , based on the total weight of the compounds of structural formula (I) in the post-clean composition.6. The composition of claim 1 , wherein the composition further comprises a co-solvent.7. The composition of claim 6 , wherein said co-solvent comprises alcohols claim 6 , ethers claim 6 , alkanes claim 6 , alkenes claim 6 , haloalkenes claim 6 , perfluorocarbons claim 6 , perfluorinated tertiary amines claim 6 , perfluoroethers claim 6 , cycloalkanes claim 6 , esters claim 6 , ketones claim 6 , oxiranes claim 6 , aromatics claim 6 , haloaromatics claim 6 , siloxanes claim 6 , hydrochlorocarbons claim 6 , hydrochlorofluorocarbons claim 6 , hydrofluorocarbons claim 6 , hydrofluoroolefins claim 6 , hydrochloroolefins claim 6 , hydrochlorofluoroolefins claim 6 , hydrofluoroethers claim 6 , or mixtures thereof.8. The composition of claim 1 , wherein the composition further comprises a surfactant.9. The ...

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Номер записи: 49
24-02-2022 дата публикации

SUBSTRATE CLEANING SOLUTION AND METHOD FOR MANUFACTURING DEVICE

Номер: US20220056383A1
Автор: HORIBA Yuko, KINUTA Takafumi, Nagahara Tatsuro
Принадлежит:

To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia. 115.-. (canceled)16. A substrate cleaning solution comprising a polymer (A) , an alkaline component (B) , and a solvent (C) ,provided that the alkaline component (B) does not comprise ammonia.17. The substrate cleaning solution according to claim 16 , wherein the alkaline component (B) comprises at least one of primary amine claim 16 , secondary amine claim 16 , tertiary amine claim 16 , and quaternary ammonium salt claim 16 , and the alkaline component (B) comprises hydrocarbon.18. The substrate cleaning solution according to claim 16 , wherein the solvent (C) comprises an organic solvent.19. The substrate cleaning solution according to claim 16 , wherein the boiling point of the alkaline component (B) at one atmospheric pressure is 20-400° C.20. The substrate cleaning solution according to claim 16 , wherein the polymer (A) comprises at least one of novolak claim 16 , polyhydroxy styrene claim 16 , polystyrene claim 16 , polyachrylate derivative claim 16 , polymaleic acid derivative claim 16 , polycarbonate claim 16 , polyvinyl alcohol derivatives claim 16 , polymethacrylate derivatives claim 16 , and copolymer of any combination of any of these.21. The substrate cleaning solution according to claim 20 , wherein the polymer (A) does not contain fluorine and/or silicon.22. The substrate cleaning solution according to claim 16 , further comprising a crack accelerating component (D) claim 16 ,wherein the crack accelerating component (D) comprises hydrocarbon and further comprises a hydroxy group and/or a carbonyl group.23. The substrate cleaning solution according to claim 16 , wherein the content of the polymer (A) is 0.1-50 mass % based on the total mass of the substrate cleaning ...

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Номер записи: 50
12-02-2015 дата публикации

POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE

Номер: US20150045277A1
Автор: Hurd Trace Quentin, Jenq Shrane Ning, Liu Jun, Medd Steven, Sun Laisheng
Принадлежит: ENTEGRIS, INC.

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium. 1. A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon , said method comprising contacting the microelectronic device with a cleaning composition for sufficient time to at least partially clean said residue and contaminants from the microelectronic device , wherein the cleaning composition includes at least one quaternary base , at least one amine , at least one azole corrosion inhibitor , at least one reducing agent , and at least one solvent , wherein the microelectronic device comprises exposed barrier layer that reduces diffusion of copper into low-k dielectric materials.2. (canceled)3. The method of claim 1 , wherein the residue is selected from the group consisting of post-CMP residue claim 1 , post-etch residue claim 1 , and post-ash residue.4. The method of claim 1 , wherein the cleaning compositions are substantially devoid of oxidizing agents; fluoride-containing sources; abrasive materials; gallic acid; alkali and/or alkaline earth metal bases; organic solvents; purines and purine-derivatives; amidoxime; cyanuric acid; triaminopyrimidine; barbituric acid and derivatives thereof;glucuronic acid; squaric acid; pyruvic acid; phosphonic acid and derivatives thereof; phenanthroline;glycine; nicotinamide and derivatives thereof; flavonoids such as flavonols and ...

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Номер записи: 51
06-02-2020 дата публикации

CONDUCTIVE AQUEOUS SOLUTION PRODUCTION DEVICE AND CONDUCTIVE AQUEOUS SOLUTION PRODUCTION METHOD

Номер: US20200040285A1
Автор: OGAWA Yuuichi
Принадлежит:

A conductive aqueous solution production device 1 has an ion exchange device mounted on the way of the main pipe supplying ultrapure water W as raw water, a supply pipe which joins the main pipe on the downstream side of the ion exchange device and a conductivity-imparting substance supply device For example, if the conductivity-imparting substance is ammonia, since the ions are cations, that is, ammonium ions (NH), it is preferable that an ion exchanger which fills the ion exchange device be a cation exchange resin. If the conductivity-imparting substance is carbon dioxide, the ions are anions, that is, bicarbonate ions (HCO) or carbonate ions (CO), and therefore it is preferable that the ion exchange device be filled with an anion exchange resin. Such a conductive aqueous solution production device is capable of producing a conductive aqueous solution with a stable concentration, and achieves excellent follow-up performance with respect to a change in concentration. 1. A conductive aqueous solution production device comprising:an ion exchange device configured to circulate raw water; anda conductivity-imparting substance supply device for adding a conductivity-imparting substance to the raw water, which has passed through the ion exchange device, to generate a conductive aqueous solution,wherein if ions, which are generated by dissolving the conductivity-imparting substance in the raw water having passed through the ion exchange device and impart conductivity to the raw water, are cations, the ion exchange device is filled with a cation exchanger, whereas if the ions are anions, the ion exchange device is filled with an anion exchanger.2. The conductive aqueous solution production device according to claim 1 , wherein a separation distance between an outlet of the ion exchange device and an addition point of the conductivity-imparting substance by the conductivity-imparting substance supply device is 5 m or less.3. The conductive aqueous solution production device ...

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Номер записи: 52
15-02-2018 дата публикации

Separating method of fluorine-containing solvent, removing method of fluorine-containing solvent contaminant, and apparatus therefore

Номер: US20180043282A1
Автор: Hideaki Kikuchi, Miki Ito, Takanori Matsumoto
Принадлежит: Du Pont Mitsui Fluorochemicals Co Ltd

An object of the invention is to separate a fluorine-containing solvent in a short time and efficiently from a fluorine-containing solvent which contains alcohol. There is provided a method for separating a fluorine-containing solvent by filtering a mixed liquid composition containing the fluorine-containing solvent, alcohol and water with a membrane containing fluorine resin.

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Номер записи: 53
18-02-2021 дата публикации

MAINTENANCE LIQUID AND MAINTENANCE METHOD

Номер: US20210047592A1
Автор: Nakano Keitaro, Sato Chigusa, Yoshizawa Mitsuaki
Принадлежит:

There is provided a maintenance liquid, which is used in maintenance of a device equipped with a discharge head for discharging an ultraviolet ray curable-type composition containing the acyl phosphine oxide-based photopolymerization initiator toward an attachment object, including a polymerizable compound in which a saturation solubility of an acyl phosphine oxide-based photopolymerization initiator at 20° C. is equal to or greater than 5.0% by mass. 1. A maintenance method , comprising: {'br': None, 'sub': '2', 'sup': 1', '2', '3, 'CH═CR—COOR—O—CH═CH—R\u2003\u2003(1)'}, 'performing maintenance of a device equipped with a discharge head for discharging an ultraviolet ray curable-type composition containing an acyl phosphine oxide-based photopolymerization initiator toward an attachment object using a maintenance liquid having a polymerizable compound in which a saturation solubility of an acyl phosphine oxide-based photopolymerization initiator at 20° C. is equal to or greater than 5.0% by mass, wherein the polymerizable compound includes at least any one of vinyl ether group-containing (meth)acrylic acid ester represented by the following general formula (1) and a monofunctional (meth)acrylate compound having an aromatic ring'}{'sup': 1', '2', '3, 'wherein Rrepresents a hydrogen atom or a methyl group, Rrepresents a divalent organic residue having 2 to 20 carbon atoms, and Rrepresents a hydrogen atom or a monovalent organic residue having 1 to 11 carbon atoms.'}2. The method according to claim 1 , wherein the viscosity of the polymerizable compound at 20° C. is equal to or less than 30 mPa·s.3. The maintenance method according to claim 1 ,wherein a content of the polymerizable compound is equal to or greater than 40% by mass with respect to the total amount of the maintenance liquid.4. The maintenance method according to claim 1 ,wherein the viscosity at 20° C. is equal to or less than 20 mPa·s.5. The maintenance method according to claim 1 ,wherein the viscosity ...

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Номер записи: 54
18-02-2021 дата публикации

AQUEOUS COMPOSITION AND CLEANING METHOD USING SAME

Номер: US20210047593A1
Автор: HORITA Akinobu, KIKUNAGA Takahiro, OIE Toshiyuki, Yamada Kenji
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a Calkylphosphonic acid, a Calkylphosphonate ester, a Calkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition. 1. An aqueous composition , comprising:(A) from 0.001 to 20 mass % of at least one fluorine-containing compound selected from the group consisting of tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to a total amount of the aqueous composition; and{'sub': 4-13', '4-13', '4-13, '(B) from 0.0001 to 10 mass % of at least one selected from the group consisting of a Calkylphosphonic acid, a Calkylphosphonate ester, a Calkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.'}2. The aqueous composition according to claim 1 , wherein the aqueous composition has a pH in a range of from 0 to 7.3. The aqueous composition according to claim 1 , further comprising hydrogen fluoride.4. The aqueous composition according to claim 3 , wherein the at least one fluorine-containing compound is hexafluorosilicic acid or a salt thereof.5. The aqueous composition according to claim 1 , wherein the Calkylphosphonic acid is present and comprises at least one selected from the group consisting of:n-butylphosphonic acid, n-pentylphosphonic acid, n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, n-undecylphosphonic acid, n-dodecylphosphonic acid, and n-tridecylphosphonic acid, optionally in salt form thereof; and/or{'sub': '4-13', 'the Calkylphosphonate ester is present and ...

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Номер записи: 55
18-02-2021 дата публикации

CLEANING SOLUTION FOR REMOVING DRY ETCHING RESIDUE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE USING SAME

Номер: US20210047594A1
Автор: AOYAMA Kimihiro, HORIE Hiroaki, KIKUNAGA Takahiro, TAJIMA Nobuo
Принадлежит: MITSUBISHI GAS CHEMICAL COMPANY, INC.

The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14. 1. A cleaning solution , comprising:from 0.2 to 20 mass % of an amine compound,from 40 to 70 mass % of a water-soluble organic solvent andwater,wherein:the amine compound comprises one or more selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane and bis(hexamethylene)triamine;the water-soluble organic solvent has a viscosity of 10 mPa·s or less at 20° C.; andpH is in a range of from 9.0 to 14.2. The cleaning solution according to claim 1 , wherein a content of the amine compound is from 2.0 to 4.0 mass %.3. The cleaning solution according to claim 1 , wherein a content of water is from 28 to 59 mass %.4. The cleaning solution according to claim 1 , wherein the water-soluble organic solvent comprises one or more selected from the group consisting of diethylene glycol monomethyl ether claim 1 , diethylene glycol monobutyl ether claim 1 , triethylene glycol monomethyl ether claim 1 , dipropylene glycol monomethyl ether and N claim 1 ,N-dimethyl isobutylamide.5. The cleaning solution according to claim 1 , wherein the amine compound comprises one or more selected from the group consisting of 3-amino-1-propanol claim 1 , N claim 1 ,N-diethyl-1 claim 1 ,3-diaminopropane and bis(hexamethylene)triamine.6. The cleaning solution according to claim 1 , which is suitable for removing dry etching residue.7. A method for manufacturing a semiconductor substrate ...

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Номер записи: 56
24-02-2022 дата публикации

SUBSTRATE CLEANING SOLUTION, AND USING THE SAME, METHOD FOR MANUFACTURING CLEANED SUBSTRATE AND METHOD FOR MANUFACTURING DEVICE

Номер: US20220059344A1
Автор: HORIBA Yuko, KINUTA Takafumi, Nagahara Tatsuro
Принадлежит:

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C). 114.-. (canceled)15. A substrate cleaning solution comprising an insoluble or hardly soluble solute (A); a soluble solute (B); and a solvent (C) ,wherein the substrate cleaning solution is dripped on a substrate and dried to remove the solvent (C), and filmed insoluble or hardly soluble solute (A) together with the soluble solute (B) remains in the film on the substrate, the film being then removed from the substrate by a remover.16. The substrate cleaning solution according to claim 15 , wherein the insoluble or hardly soluble solute (A) is insoluble or hardly insoluble in the remover; and the soluble solute (B) is soluble in the remover.17. The substrate cleaning solution according to claim 15 , the solvent (C) comprises an organic solvent claim 15 , andthe solvent (C) has volatility; andthe boiling point of the solvent (C) at one atmospheric pressure is 50-250° C.18. The substrate cleaning solution according to claim 15 , wherein the insoluble or hardly soluble solute (A) comprises at least one of novolak claim 15 , polyhydroxy styrene claim 15 , polystyrene claim 15 , polyacrylate derivatives claim 15 , polymaleic acid derivatives claim 15 , polycarbonate claim 15 , polyvinyl alcohol derivatives claim 15 , polymethacrylate derivatives claim 15 , and copolymer of any combination of any of these claim 15 , and the insoluble or hardly soluble solute (A) does not contain fluorine and/or silicon.19. The substrate cleaning solution according to claim 15 , wherein the soluble solute (B) is a crack accelerating component (B′) claim 15 ,where the crack accelerating component (B′) comprises hydrocarbon and further comprises a hydroxy group and/or a carbonyl group.21. The substrate cleaning solution ...

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Номер записи: 57
16-02-2017 дата публикации

WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE

Номер: US20170044470A1
Автор: Bruce Robert L., Engelmann Sebastian U., Joseph Eric A., Khojasteh Mahmoud, NAKAMURA Masahiro, Papa Rao Satyavolu S., To Bang N., Totir George G., Zhu Yu
Принадлежит:

A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH)(NO)),(CAN). 1. An etch chemistry for removing hydrocarbon etch residues comprising an aqueous solution including a complex including at least one element of the lanthanide family.2. The etch chemistry of claim 1 , wherein the lanthanoid element that provides said at least one element of the lanthanide family is present in the aqueous lanthanoid solution in a concentration ranging from 100 g/L to 500 g/L.3. The etch chemistry of claim 1 , wherein the aqueous solution further includes at least one nitrogen including compound selected from the group consisting of ammonia (NH) claim 1 , nitrate (NO) and a combination thereof.4. The etch chemistry of claim 1 , wherein the lanthanoid element in the aqueous solution is cerium ammonium nitrate (Ce(NH)(NO))(CAN).5. The etch chemistry of claim 1 , wherein the lanthanoid element includes a lanthanoid selected from the group consisting of lanthanum claim 1 , cerium claim 1 , praseodymium claim 1 , promethium claim 1 , samarium claim 1 , europium claim 1 , gadolinium claim 1 , terbium claim 1 , dysprosium claim 1 , holmium claim 1 , erbium claim 1 , thulium claim 1 , ytterbium claim 1 , lutetium and combinations thereof.6. The etch chemistry of claim 1 , wherein the etch residue is graphitic.7. An etch chemistry for removing hydrocarbon etch residues comprising an aqueous solution including a complex including at least one cerium containing lanthanide.8. The etch chemistry of claim 7 , wherein the cerium containing lanthanide is present in the aqueous lanthanoid solution in a concentration ranging from 100 g/L to 500 g/L.9. The ...

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Номер записи: 58
15-02-2018 дата публикации

COMPOSITIONS AND METHODS FOR HANDLING POTENTIAL PRION CONTAMINATION

Номер: US20180044618A1
Автор: Frieze Marcia A.
Принадлежит: Case Medical, Inc.

A composition and method of treatment for handling potential prion contamination of surfaces is disclosed. The products include and the treatment uses products that include at least one prion digester enzyme selected from a serine protease in solution with a non-ionic surfactant, a hydrotrope and high purity water 1. A composition comprising(a) at least one prion digester enzyme selected from the group of serine proteases selected from the group consisting of akalase, savinase, and mixtures thereof;(b) optionally one or more additional proteases that are not prion digester enzymes;(c) optionally a further enzyme selected from the group consisting of one or more lipases; one or more amylases, one or more cellulases and mixtures thereof;(d) a surfactant portion consisting essentially of non-ionic surfactant;{'sub': '6-10', '(e) optionally a hydrotrope consisting essentially of an alkali metal salt of a sulfated (unsubstituted or mono or di lower alkyl substituted) Caryl;'}(f) optionally calcium chloride;(g) optionally propylene glycol;(h) optionally a preservative;(i) optionally buffer;(j) high purity water;having a pH in the range of about 8 about 10;said at least one prion digester enzyme in an amount selected from about 0.01% by weight to about 15 % by weight based on the complete composition sufficient to degrade a prion material to non-infectious fragments after an exposure time selected from time periods within the range of about 10 minutes to about 30 minutes at a temperature selected from temperatures within the range of 45°°C. to 65° C.2. The method of wherein said at least one additional enzyme which is not a protease enzyme is present3. The method of wherein said at least one hydrotrope is present.4. The method of wherein said hydrotrope is selected from the group consisting of sodium xylene sulfonate claim 3 , sodium toluene sulfonate claim 3 , Dowfax claim 3 , sodium cumene sulfonate.5. The method of wherein said buffer is present and is selected from the ...

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Номер записи: 59
03-03-2022 дата публикации

Cleaning Compositions

Номер: US20220064575A1
Автор: Dory Thomas, Kneer Emil A., MIZUTANI Atsushi
Принадлежит:

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 3) at least one corrosion inhibitor, the corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one sulfonic acid; and 5) water.

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Номер записи: 60
03-03-2022 дата публикации

CLEANING COMPOSITIONS AND METHODS OF USE THEREOF

Номер: US20220064577A1
Автор: Ballesteros Carl, Schaefer Zachary L., Turner Eric
Принадлежит:

The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant. 1. A cleaning composition , comprising:at least one pH adjusting agent; andat least one biosurfactant selected from the group consisting of glycolipids, lipopeptides, and mixtures thereof:wherein the composition has a pH of from about 1 to about 14.2. The composition of claim 1 , wherein the at least one pH adjusting agent comprises a carboxylic acid claim 1 , an amino acid claim 1 , a sulfonic acid claim 1 , phosphoric acid claim 1 , or a phosphonic acid.3. The composition of claim 1 , wherein the at least one adjusting agent comprises at least one carboxylic acid.4. The composition of claim 1 , wherein the at least one pH adjusting agent is selected from the group consisting of formic acid claim 1 , acetic acid claim 1 , malonic acid claim 1 , citric acid claim 1 , propionic acid claim 1 , malic acid claim 1 , adipic acid claim 1 , succinic acid claim 1 , lactic acid claim 1 , oxalic acid claim 1 , hydroxyethylidene diphosphonic acid claim 1 , 2-phosphono-1 claim 1 ,2 claim 1 ,4-butane tricarboxylic acid claim 1 , aminotrimethylene phosphonic acid claim 1 , hexamethylenediamine tetra(methylenephosphonic acid) claim 1 , bis(hexamethylene)triamine phosphonic acid claim 1 , amino acetic acid claim 1 , peracetic acid claim 1 , potassium acetate claim 1 , phenoxyacetic acid claim 1 , glycine claim 1 , bicine claim 1 , diglycolic acid claim 1 , glyceric acid claim 1 , tricine claim 1 , alanine claim 1 , histidine claim 1 , valine claim 1 , phenylalanine claim 1 , proline claim 1 , glutamine claim 1 , aspartic acid claim 1 , glutamic acid claim 1 , ...

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Номер записи: 61
25-02-2021 дата публикации

CLEANING AND/OR DISINFECTING COMPOSITIONS

Номер: US20210051953A1
Автор: Collins Andrew Scott, Goulter Scott Kennedy
Принадлежит: LegioGuard Pty Ltd

A cleaning and/or disinfecting composition comprising: at least one carboxylic acid; at least one alkali metal halide salt; and at least one antibacterial compound is disclosed. The composition can be used to clean and/or disinfect a surface or water system. 1. A cleaning and/or disinfecting composition suitable for cleaning and/or disinfecting fluid conduits and other wetted surfaces of water distribution , water recirculation , and/or water treatment systems , the composition comprising: from about 5% w/v to about 50% w/v of at least one carboxylic acid; from about 5% w/v to about 50% w/v of at least one alkali metal halide salt; and from about 0.5% w/v to about 20% w/v of at least one antibacterial compound.2. The cleaning and/or disinfecting composition of claim 1 , wherein the carboxylic acid is a Cto Ccarboxylic acid.3. The cleaning and/or disinfecting composition of claim 1 , wherein the carboxylic acid is acetic acid.4. The cleaning and/or disinfecting composition of claim 3 , wherein the acetic acid is present in the composition in an amount of from about 5% w/v to about 15% w/v.5. The cleaning and/or disinfecting composition of claim 3 , wherein the acetic acid is present in the composition in an amount of about 9.9%.6. The cleaning and/or disinfecting composition of claim 1 , wherein the alkali metal halide salt is sodium chloride.7. The cleaning and/or disinfecting composition of claim 6 , wherein the sodium chloride is present in the composition in an amount of about 20% w/v.8. The cleaning and/or disinfecting composition of claim 1 , wherein the antibacterial compound is sodium ascorbate.9. The cleaning and/or disinfecting composition of claim 8 , wherein the sodium ascorbate is present in the composition in an amount of about 2.5% w/v.10LegionellaL. pneumophilaPseudomonasP. aeruginosaSalmonellaS. bongoriS. entericaStreptococcusS. pyogenes, S. agalactiae, S. dysgalactiae, S. bovis, S. anginosus, S. sanguinis, S. mitis, S. mutansS. ...

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Номер записи: 62
14-02-2019 дата публикации

DEOXYGENATION APPARATUS AND SUBSTRATE PROCESSING APPARATUS

Номер: US20190046900A1
Автор: KIKUMOTO Noriyuki, Kobayashi Kenji, SASAKI Mitsutoshi
Принадлежит:

A deoxygenation apparatus reduces the concentration of dissolved oxygen in a target liquid. The deoxygenation apparatus includes a reservoir for holding the target liquid, a gas supply part for supplying an additive gas different from oxygen into the target liquid in the reservoir, a storage part for storing correlation information indicating the relationship between the concentration of dissolved oxygen in the target liquid and a total supply amount that is a total amount of the additive gas supplied from the gas supply part into the target liquid from when supply was started, and a calculation part for obtaining the concentration of dissolved oxygen in the target liquid on the basis of the total supply amount and the correlation information. The concentration of dissolved oxygen in the target liquid is easily acquired without measuring the concentration of dissolved oxygen in the target liquid with an oxygen analyzer. 1. A substrate processing method for processing a substrate , comprising:a) reducing a concentration of dissolved oxygen in a target liquid; andb) supplying a processing liquid to a substrate, said processing liquid including said target liquid having a concentration of dissolved oxygen that has been reduced by said operation a), andsaid operation a) includesa1) holding a target liquid in a reservoir;a2) supplying an additive gas that is different from oxygen into said target liquid held in said reservoir;a3) obtaining a total supply amount being a total amount of said additive gas supplied into said target liquid from when supply was started; anda4) obtaining the concentration of dissolved oxygen in said target liquid on the basis of said total supply amount and correlation information that indicates a relationship between said total supply amount and the concentration of dissolved oxygen in said target liquid.2. The substrate processing method according to claim 1 , whereinsaid operation a2) includesc) controlling an unit supply amount that is an ...

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Номер записи: 63
14-02-2019 дата публикации

Processing Composition of Improved Metal Interconnect Protection and The Use Thereof

Номер: US20190048292A1
Автор: Shan Kellsie, Shan Lei, Wu Jiali
Принадлежит:

A semiconductor processing composition for removing residues and/or contaminants from substrate containing Cu, barrier metal and low-k dielectric. The processing composition includes at least one quaternary base, at least one organic amine, at least one surface modifier, at least one antioxidant, at least one complexing agent and balance water. The processing composition provides a sufficient corrosion protection to Cu and metal barrier during process queue time without deteriorating reliability of electronic devices. 1. A processing composition for removing residues and/or contaminants from Cu interconnect containing substrate , wherein the composition compromises at least one quaternary base , at least one organic amine , at least one surface modifier , at least one antioxidant , at least one complexing agent and balance water , wherein the substrate contains Cu and barrier metals as of Co , Ru , W , Mo , Rh , and alloys and nitride thereof , wherein the composition is compatible with the low-k dielectrics , Cu and barrier metals.2. The composition of claim 1 , wherein the quaternary base is preferably selected from tetramethylammonium hydroxide claim 1 , (2-hydroxyethyl) trimethylammonium hydroxide claim 1 , the organic amine preferably selected from monoethanolamine claim 1 , the surface modifier preferably selected from 1 claim 1 ,2 claim 1 ,4-triazole claim 1 , imidazole claim 1 , pyrrole claim 1 , pyrazole claim 1 , the antioxidant preferably selected from ascorbic acid claim 1 , the complexing agent preferably selected from (hydroxyethyl)ethylenediamine triacetic acid (HEDTA) claim 1 , nitrilotriacetic acid claim 1 , wherein the processing composition possesses a PH value in a range of 8-14 claim 1 , more preferably in a range of 10-14 claim 1 , most preferably in a range of 12-14.3. The composition of claim 1 , wherein a preferred composition contains a combination of 0.01 wt % to 15 wt % tetramethylammonium hydroxide claim 1 , 0.01 wt % to 10 wt % ...

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Номер записи: 64
14-02-2019 дата публикации

Cleaning solution and cleaning method for a semiconductor substrate or device

Номер: US20190048293A1
Автор: Jen-Chieh Shih, Takayuki Haraguchi, Takumi NAMIKI
Принадлежит: Tokyo Ohka Kogyo Co Ltd

A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60° C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.

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Номер записи: 65
13-02-2020 дата публикации

CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES

Номер: US20200048584A1
Автор: Dory Thomas, Du Bing, Kneer Emil A., Takahashi Tomonori, Wojtczak William A.
Принадлежит:

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate. 1. A cleaning composition , comprising:1) at least one redox agent;2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid;3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole;4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers;5) at least one quaternary ammonium hydroxide; and6) water.2. The composition of claim 1 , wherein the pH of the composition is between about 6 and about 11.3. The composition of claim 1 , wherein the at least one redox agent comprises hydroxylamine.4. The composition of claim 1 , wherein the at least one redox agent is from about 0.5% to about 20% by weight of the composition.5. The composition of claim 1 , wherein the polyaminopolycarboxylic acid is selected from the group consisting of mono- or polyalkylene polyamine polycarboxylic acids claim 1 , polyaminoalkane polycarboxylic acids claim 1 , polyaminoalkanol polycarboxylic acids claim 1 , and hydroxyalkylether polyamine polycarboxylic acids.6. The composition of claim 1 , wherein the polyaminopolycarboxylic acid is selected from the group consisting of butylenediaminetetraacetic acid claim 1 , ...

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Номер записи: 66
23-02-2017 дата публикации

METHOD FOR REMOVING SCALE AND SCALE REMOVER IN STEAM GENERATING FACILITY

Номер: US20170050873A1
Автор: SAKAI Mizuyuki, Shimura Yukimasa
Принадлежит:

Provided are a method for removing scale and a scale remover that can efficiently remove scale deposited inside a boiler can or the like in an addition amount of chemicals permissible in terms of cost without corroding a boiler, particularly can efficiently remove scale deposited inside a boiler can even in a facility operated with feed water containing high-concentration iron. A method for removing scale deposited in a system of a steam generating facility, wherein polyacrylic acid having a weight-average molecular weight of more than 20,000 and 170,000 or less and/or a salt thereof is added to feed water of the steam generating facility. When the feed water contains iron, polymethacrylic acid having a weight-average molecular weight of more than 1,000 and 100,000 or less and/or a salt thereof is further added in combination. 1. A method for removing scale deposited in a system of a steam generating facility , the method comprising:adding polyacrylic acid having a weight-average molecular weight of more than 20,000 and 170,000 or less and/or a salt of the polyacrylic acid to water in the steam generating facility or feed water of the steam generating facility.2. The method for removing scale in a steam generating facility according to claim 1 , wherein the polyacrylic acid and/or the salt of the polyacrylic acid is added so that a concentration of the polyacrylic acid and/or the salt of the polyacrylic acid in water of a steam generating unit in the steam generating facility is 1 to 1 claim 1 ,000 mg/L.3. The method for removing scale in a steam generating facility according to claim 1 ,wherein the feed water of the steam generating facility contains iron; andpolymethacrylic acid having a weight-average molecular weight of more than 1,000 and 100,000 or less and/or a salt of the polymethacrylic acid is further added to the water in the steam generating facility or the feed water of the steam generating facility.4. The method for removing scale in a steam generating ...

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Номер записи: 67
03-03-2022 дата публикации

METHOD OF CLEANING A SURFACE

Номер: US20220068634A1
Автор: Alessio Verni Giuseppe, Chandrasekaran Anirudhan, Chiappe Daniele, Deng Shaoren, Dezelah Charles, Givens Michael, Illiberi Andrea, IWASHITA Shinya, Madhiwala Viraj, Maes Jan Willem, Sharma Varun, Tois Eva, Tuominen Marko, Zhu Chiyu
Принадлежит:

Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber. 1. A method for cleaning a substrate , the method comprising:providing a substrate comprising a dielectric and an oxidized metal surface, to a reaction chamber;providing a reducing agent to the reaction chamber, thereby contacting the substrate with the reducing agent and converting the oxidized metal surface to a metal surface;providing an oxidizing agent to the reaction chamber, thereby contacting the substrate with the oxidizing agent and oxidizing any metal contaminants on the dielectric surface, thus forming oxidized metal contaminants; and,providing a cleaning agent to the reaction chamber, thereby contacting the substrate with the cleaning agent and removing the oxidized metal contaminants from the substrate.2. The method according to wherein the oxidizing agent is an oxygen-comprising gas or gas mixture.3. The method according to wherein the oxidizing agent is a gas selected from O claim 1 , O claim 1 , HO claim 1 , HO claim 1 , and mixtures thereof.4. The method according to wherein the reducing agent comprises an alcohol.5. The method according to wherein the cleaning agent comprises a beta diketonate.6. The method according to wherein the cleaning agent comprises a compound that comprises a cyclopentadienyl group.7. The method according to wherein the cleaning agent comprises carbon monoxide.8. The method according to wherein the cleaning agent comprises a carboxylic acid.9. The method according to wherein the step of providing a cleaning agent to the reaction chamber is followed by a step of providing a further oxidizing agent to the reaction chamber.10. The method according to wherein the step of providing a further oxidizing agent to the reaction chamber comprises claim 9 , in the following order claim 9 , providing Oto the reaction chamber in an Opulse and providing ...

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Номер записи: 68
22-02-2018 дата публикации

COMPOSITION FOR REMOVING PHOTORESIST RESIDUE AND/OR POLYMER RESIDUE

Номер: US20180051237A1
Автор: Seino Yasuyuki
Принадлежит: Kanto Kagaku Kabushiki Kaisha

To provide a composition for removing photoresist residue and/or polymer residue formed in a process for producing a semiconductor circuit element, and a removal method employing same. A composition for removing photoresist residue and/or polymer residue, the composition containing saccharin and water, and the pH being no greater than 9.7. 1. A composition for removing photoresist residue and/or polymer residue , the composition comprising saccharin and water , and the pH being no greater than 9.7.2. The composition according to claim 1 , wherein it further comprises one or more types of substance selected from the group consisting of (A) a water-soluble solvent claim 1 , (B) an acid claim 1 , and (C) a dissociable nitrogen-containing compound.3. The composition according to claim 1 , wherein the content of saccharin is at least 0.01 mass %.4. A method for removing photoresist residue and/or polymer residue claim 1 , the method employing the composition according to .5. A method for producing a semiconductor circuit element having metal wiring claim 1 , the method comprising a step of removing photoresist residue and/or polymer residue remaining on a metal wiring-forming structure using the composition according to .6. A semiconductor circuit element produced by the method according to .7. The composition according to claim 2 , wherein the content of saccharin is at least 0.01 mass %.8. A method for removing photoresist residue and/or polymer residue claim 2 , the method employing the composition according to .9. A method for producing a semiconductor circuit element having metal wiring claim 2 , the method comprising a step of removing photoresist residue and/or polymer residue remaining on a metal wiring-forming structure using the composition according to .10. A semiconductor circuit element produced by the method according to . The present invention relates to a composition for removing photoresist residue and/or polymer residue remaining after dry etching or ...

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Номер записи: 69
03-03-2016 дата публикации

FLUORO-INORGANICS FOR INHIBITING OR REMOVING SILICA OR METAL SILICATE DEPOSITS

Номер: US20160060576A1
Автор: Batton Carol B., Hoots John E., Miller Thomas M., Sommese Anthony G.
Принадлежит:

The present invention generally relates to methods for removing silica or silicate deposits comprising contacting a cleaning composition with a surface in contact with a liquid containing silica or silicates, wherein the cleaning composition comprises a salt of a nitrogen base having a fluoro inorganic anion. In particular, these methods for removing silica or silicate deposits can be used in steam generators, evaporators, heat exchangers, and the like that are used in produced water plant unit operations. 1. A method for removing a silica or a silicate deposit or for inhibiting silica or silicate deposition comprising contacting a cleaning composition with a surface , the surface being in contact with a liquid containing a silica or a silicate and having a silica or a silicate deposit or being susceptible to forming a silica or a silicate deposit ,wherein the cleaning composition comprises an antifoaming agent and a salt of a nitrogen base having a fluoro inorganic anion.2. The method of wherein the surface is an internal surface of a piece of equipment.34.-. (canceled)5. The method of wherein the cleaning composition further comprises an inorganic or organic inhibitor of silica or silicate deposition.6. The method of wherein the cleaning composition further comprises a corrosion inhibitor.7. (canceled)8. The method of wherein the piece of equipment is a boiler claim 2 , steam generator claim 2 , an evaporator claim 2 , a heat exchanger claim 2 , a cooling coil claim 2 , a tank claim 2 , a sump claim 2 , a containment vessel claim 2 , a pump claim 2 , a distributor plate claim 2 , or a tube bundle.9. The method of wherein the piece of equipment is a pipe claim 2 , a drain line claim 2 , a fluid transfer line claim 2 , a production well claim 2 , or a subterranean hydrocarbon containing reservoir.10. The method of wherein the piece of equipment is an evaporator used in a steam-assisted gravity drainage system.11. The method of wherein the piece of equipment is a ...

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Номер записи: 70
03-03-2016 дата публикации

Method of generating carbonate in situ in a use solution and of buffered alkaline cleaning under an enriched co2 atmosphere

Номер: US20160060577A1
Автор: Anthony W. Erickson, Peter J. Fernholz
Принадлежит: ECOLAB USA INC

The invention is directed to methods of generating carbonate in situ in a use solution under an enriched CO 2 atmosphere. In another aspect, the invention is directed to methods of cleaning food processing surfaces under an enriched CO 2 atmosphere comprising contacting a food processing surface with a cleaning composition comprised of an alkalinity source, a surfactant, and water, monitoring the pH during the wash cycle and adjusting the pH by recirculating a use solution, adding a secondary alkalinity source, or both recirculating a use solution and adding a secondary alkalinity source, to generate carbonate in situ in the use solution. In a particular embodiment of the invention the alkalinity source is an alkali metal carbonate and the secondary alkalinity source is an alkali metal hydroxide.

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Номер записи: 71
03-03-2016 дата публикации

CLEANING AGENT FOR METAL WIRING SUBSTRATE, AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE

Номер: US20160060584A1
Автор: Maesawa Tsuneaki, Mizuta Hironori, Watahiki Tsutomu
Принадлежит: WAKO PURE CHEMICAL INDUSTRIES, LTD.

It is a subject of the present invention to provide a cleaning agent for a substrate having a metal wiring, and a cleaning method for a semiconductor substrate comprising that the cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical polishing (CMP) in a manufacturing process of a semiconductor device. (1) Residues of fine particles (polishing agents) used in the CMP process, fine particles (metal particles) derived from a polished metal, an anticorrosive, and the like, can be removed sufficiently. (2) A coating film (protective film: oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An oxide film containing a metal oxide can be formed after removal (stripping) of the coating film. (4) A semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the cleaning agent for a long period of time. 1. A cleaning agent for a substrate having a metal wiring , comprising an aqueous solution containing (A) carboxylic acid having a nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine , and having a pH of 10 or higher.2. The cleaning agent according to claim 1 , wherein the (A) carboxylic acid having a nitrogen-containing heterocyclic ring is a carboxylic acid having a nitrogen-containing unsaturated heterocyclic ring.3. The cleaning agent according to claim 1 , wherein the (A) carboxylic acid having a nitrogen-containing heterocyclic ring is a carboxylic acid having a nitrogen-containing unsaturated heterocyclic ring and an amino group.6. The ...

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Номер записи: 72
21-02-2019 дата публикации

METHOD FOR OFF-LINE CLEANING OF COOLING TOWERS

Номер: US20190055502A1
Автор: Gupta Amit, Hu Lanhua
Принадлежит: ECOLAB USA, Inc.

A method of cleaning a cooling water system is disclosed. The method may include contacting a cooling tower fill with a composition that may include a surfactant and an additive selected from an oxidizing agent, an acid, and any combination thereof when the cooling water system is off-line. The method may include contacting a deposit in the cooling tower fill with the composition. The oxidizing agent may be hydrogen peroxide, sodium hypochlorite, chlorine dioxide, ozone, sodium hypobromite, sodium or potassium permanganate, or any combination thereof. The surfactant may include a C-Calkyl polyglycoside and a C-Calkyl polyglycoside. 1. A method of cleaning a cooling water system , comprising:contacting a cooling tower fill with a composition comprising a surfactant and an additive selected from an oxidizing agent, an acid, and any combination thereof, when the cooling water system is off-line.2. The method of claim 1 , wherein the oxidizing agent is selected from hydrogen peroxide claim 1 , sodium hypochlorite claim 1 , chlorine dioxide claim 1 , ozone claim 1 , sodium hypobromite claim 1 , sodium or potassium permanganate claim 1 , potassium peroxymono sulfate claim 1 , peroxy salts of alkali earth metals claim 1 , and any combination thereof.3. The method of claim 1 , wherein the acid is selected from hydrochloric acid claim 1 , sulfuric acid claim 1 , sulfamic acid claim 1 , oxalic acid claim 1 , citric acid claim 1 , and any combination thereof.4. The method of claim 1 , wherein the oxidizing agent comprises hydrogen peroxide and a concentration of the hydrogen peroxide in the composition is about 0.25% to about 50% by weight.5. The method of claim 1 , wherein the oxidizing agent comprises hydrogen peroxide and a concentration of the hydrogen peroxide in the composition is about 7% to about 40% by weight.6. The method of claim 1 , wherein the surfactant is non-ionic claim 1 , ionic claim 1 , or zwitterionic.7. The method of claim 1 , wherein the surfactant ...

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Номер записи: 73
20-02-2020 дата публикации

Method for treating a semiconductor device

Номер: US20200055097A1
Автор: James A. Ball, Phil WAGGONER, Scott Parker
Принадлежит: Life Technologies Corp

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

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Номер записи: 74
04-03-2021 дата публикации

Treatment Liquid for Semiconductor Wafers, Which Contains Hypochlorite Ions

Номер: US20210062115A1
Автор: Seiji Tono, Takafumi Shimoda, Takayuki Negishi, Yuki Kikkawa
Принадлежит: Tokuyama Corp

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

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Номер записи: 75
05-03-2015 дата публикации

GLASS-ELECTRODE RESPONSIVE-GLASS CLEANING LIQUID AND METHOD FOR CLEANING GLASS-ELECTRODE RESPONSIVE-GLASS

Номер: US20150064344A1
Автор: MORI Takeshi, NISHIMURA Nahoko, OGURA Katsuaki, Shibata Manabu, YAMANOUCHI Hisashi
Принадлежит:

To maintain a uniform etching rate during cleaning of a responsive glass in a glass electrode, a responsive-glass cleaning liquid for a glass electrode serves to clean a responsive glass used in the glass electrode is used with a hydrated-layer forming solution for forming a hydrated layer on the surface of the responsive glass and contains ammonium hydrogen fluoride having a predetermined concentration, or a salt of a strong base containing hydrofluoric acid and a fluoride ion. 1. A glass-electrode responsive-glass cleaning liquid for cleaning a responsive glass used in a glass electrode , wherein the liquidis used with a hydrated-layer forming solution for forming a hydrated layer on the surface of the responsive glass after cleaning, andcontains ammonium hydrogen fluoride having a predetermined concentration or a salt of a strong base containing hydrofluoric acid and a fluoride ion.2. The glass-electrode responsive-glass cleaning liquid according to claim 1 , whereinthe hydrated-layer forming solution is neutral or acidic.3. The glass-electrode responsive-glass cleaning liquid according to claim 1 , whereinthe responsive-glass cleaning liquid contains ammonium hydrogen fluoride, andthe concentration of ammonium hydrogen fluoride is 4 mass % or less.4. The glass-electrode responsive-glass cleaning liquid according to claim 1 , whereinthe liquid cleans the responsive glass containing a metal oxide as a component.5. A glass-electrode responsive-glass cleaning method comprising a step of cleaning a responsive glass used in a glass electrode by using a responsive-glass cleaning liquid containing ammonium hydrogen fluoride claim 1 , or a salt of a strong base containing hydrofluoric acid and a fluoride ion.6. The glass-electrode responsive-glass cleaning method according to claim 5 , further comprising a hydrated-layer forming step of forming a hydrated layer on the surface of the responsive glass by using a neutral or acidic hydrated-layer forming solution after the ...

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Номер записи: 76
28-02-2019 дата публикации

COMPOSITION, COMPOSITION RESERVOIR, AND METHOD FOR PRODUCING COMPOSITION

Номер: US20190062159A1
Автор: KAMIMURA Tetsuya
Принадлежит: FUJIFILM Corporation

An object of the present invention is to provide a composition including hydrogen peroxide, which can be used for semiconductor device manufacturing and which exhibits an excellent storage stability and has a reduced effect of defects on a semiconductor substrate. Further, another object of the present invention is to provide a method for producing the composition including hydrogen peroxide, and a composition reservoir for storing the composition. 1. A composition , comprising:hydrogen peroxide;an acid; anda Fe component,{'sup': −5', '2, 'wherein the content of the Fe component is 10to 10in terms of mass ratio with respect to the content of the acid.'}2. The composition according to claim 1 , further comprising:an anthraquinone compound.3. The composition according to claim 1 , wherein the content of the anthraquinone compound is 0.01 ppb by mass to 1000 ppb by mass with respect to the total mass of the composition.4. The composition according to claim 1 , wherein the content of the acid is 0.01 ppb by mass to 1000 ppb by mass with respect to the total mass of the composition.5. The composition according to claim 1 , wherein the total content of the Fe component is 0.1 ppt by mass to 1 ppb by mass with respect to the total mass of the composition.6. The composition according to claim 1 , wherein the content of Fe particles contained in the Fe component is 0.01 ppt by mass to 0.1 ppb by mass with respect to the total mass of the composition.7. The composition according to claim 1 , further comprising:at least one or more metal components containing a specific atom selected from the group consisting of Ni, Pt, Pd, Cr, Ti, and Al,wherein the content of the metal component is 0.01 ppt by mass to 10 ppb by mass with respect to the total mass of the composition for each specific atom.8. The composition according to claim 1 , further comprising:at least one or more metal components containing a specific atom selected from the group consisting of Ni, Pt, Pd, and Al,wherein ...

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Номер записи: 77
28-02-2019 дата публикации

Cleaning compositions

Номер: US20190062674A1
Автор: Emil A. Kneer, Tetsuya Kamimura, Thomas Dory
Принадлежит: Fujifilm Electronic Materials USA Inc

The present disclosure is directed to non-corrosive cleaning compositions that are useful, e.g., for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

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Номер записи: 78
17-03-2022 дата публикации

Compositions for Engine Carbon Removal and Methods and Apparatus for Removing Carbon - III - C1

Номер: US20220082049A1
Автор: Thoma Steven G., Thompson Bernie C.
Принадлежит:

The testing of various chemicals has yielded new chemicals and chemical mixtures for the use of removing carbon deposits from the internal combustion engine. Some of these chemicals and chemical mixtures have proven to work better across many different carbon types than other chemicals that were tested. These chemical terpenes are typically produced from plants. One standard terpene mixture is known as turpentine. The chemical turpentine and chemicals found in turpentine have been determined, through our research and testing, to be extremely effective at removing the carbon that is produced within the internal combustion engine. 1. A method of removing existing carbonaceous deposits from an internal combustion engine;the engine including an induction system, one or more cylinders, and an exhaust system; the carbonaceous deposits are of the type built up over time during the operation of the engine (hereinafter referred to as “carbon deposits”); the method including the steps of:selecting a terpene;introducing droplets of the selected terpene into the induction system while the engine is running;solubilizing at least some of the carbon deposits in the induction system with the droplets of the terpene;removing at least some of the solubilized carbon deposits from the induction system; andburning the solubilized and removed carbon deposits in the cylinders as part of the normal combustion process.2. The method as set forth in claim 1 , wherein the terpene is at least one of oil of turpentine (TPT) claim 1 , y-terpinene (y-T) claim 1 , p-cymene (p-C) claim 1 , terpinolene (TO) claim 1 , alpha-pinene (A-p) claim 1 , (−)-beta-pinene (b-p) claim 1 , camphene (ch) claim 1 , 3-carene (3-c) claim 1 , R-(+)-limonene claim 1 , and S-(−)-limonene; and wherein the step of solubilizing is solubilizing at least some of the carbon deposits in the induction system with droplets of at least one of oil of turpentine (TPT) claim 1 , y-terpinene (y-T) claim 1 , p-cymene (p-C) claim 1 , ...

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Номер записи: 79
10-03-2016 дата публикации

AQUEOUS CLEANING COMPOSITION AND METHOD

Номер: US20160068741A1
Автор: Talley Charles Bullick
Принадлежит:

An aqueous cleaning composition for removing paraffin, asphaltene, and scale deposits or plugs from a hydrocarbon system. The aqueous cleaning composition is formed of a cleaning composition and an aqueous liquid. The cleaning composition contains about 21-33% of a silicate, about 20-35% of a peroxygen, about 3-15% of a phosphate, about 15-40% of a carbonate or bicarbonate, about 1-10% of a chelating agent, about 1-5.5% of a surfactant combination. In one embodiment, the surfactant combination includes a surfactant polymer mixture containing a block polymer and a reverse polymer, and a wetting agent containing a sulfonated material or an ethoxylated alcohol. 1. A cleaning composition comprising:about 21% to about 33% of a silicate;about 20% to about 35% of a peroxygen;about 3% to about 15% of a phosphate;about 15% to about 40% of a carbonate or a bicarbonate;about 1% to about 10% of a chelating agent;about 0.6% to about 2% of a surfactant polymer mixture containing an equal amount of a block polymer and a reverse polymer; andabout 0.5% to about 2% of a wetting agent containing a sulfonated material or an ethoxylated alcohol, wherein a ratio of the surfactant polymer mixture to the wetting agent is about 1:1 to about 1:2.2. The cleaning composition of claim 1 , wherein the silicate comprises a sodium metasilicate claim 1 , a sodium sesqui-silicate claim 1 , a sodium silicate claim 1 , a potassium silicate claim 1 , or an orthosilicate.3. The cleaning composition of claim 1 , wherein the peroxygen comprises a percarbonate claim 1 , a perborate claim 1 , a hydrogen peroxide claim 1 , a persulfate claim 1 , a thiourea dioxide claim 1 , a diethylhydroxylamine claim 1 , a peracetic acid claim 1 , or a urea peroxide.4. The cleaning composition of claim 1 , wherein the phosphate comprises sodium tripolyphosphate claim 1 , tetrapotassium pyrophosphate claim 1 , sodium hexametaphosphate claim 1 , sodium acid pyrophosphate claim 1 , tetrasodium pyrophosphate claim 1 , ...

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Номер записи: 80
11-03-2021 дата публикации

SURFACE TREATMENT COMPOSITION, METHOD FOR PRODUCING SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

Номер: US20210071111A1
Автор: ISHIDA Yasuto, ONISHI SHOGO, YOSHINO Tsutomu
Принадлежит: FUJIMI INCORPORATED

To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. 2. The surface treatment composition according to claim 1 , whereina pH is 5 or less.3. The surface treatment composition according to claim 1 , whereina pH is 3 or less.4. The surface treatment composition according to further comprising:a water-soluble polymer having a constituent unit derived from glycerol.5. The surface treatment composition according to further comprising:an ionic dispersant.6. The surface treatment composition according to claim 5 , whereinthe ionic dispersant is a high molecular weight compound having a sulfonic acid (salt) group.7. The surface treatment composition according to claim 1 , whereinthe surface treatment composition is substantially free from an abrasive.8. The surface treatment composition according to claim 1 , whereinthe polishing object after polishing contains polysilicon.9. The surface treatment composition according to claim 1 , whereina weight average molecular weight of the polymer is 50,000 or more and 900,000 or less.11. A surface treatment method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'surface-treating a polishing object after polishing using the surface treatment composition according to to reduce an organic residue on a surface of the polishing object after polishing.'}12. The surface treatment method according to claim 11 , whereinthe surface treatment includes rinse polishing or cleaning.13. A method for producing a semiconductor substrate comprising:{'claim-ref': {'@idref': 'CLM-00011', 'claim 11'}, 'a surface treatment step of reducing an organic residue on a surface of a polishing object after polishing by the surface treatment method according to , wherein'}the polishing object after polishing is a semiconductor substrate after polishing.14. The surface treatment composition according to claim 2 , whereina pH is 3 or ...

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Номер записи: 81
11-03-2021 дата публикации

PHOTORESIST REMOVER COMPOSITIONS

Номер: US20210071120A1
Автор: WU Hengpeng
Принадлежит:

The present invention relates to a remover composition comprising, tetraalkylammonium hydroxide, a benzylic alcohol, a glycol component comprising at least one glycol compound, and a and an alkyl amine component, wherein said alkyl amine component is selected from the group consisting of a dialkyl amine, a mono-alkyl amine having structure having structure (I), and combinations thereof wherein, in said di-alkyl amine, one of the alkyl groups is a C-1 to C-4 n-alkyl and the other alkyl group is a C-16 to C-20 n-alkyl, and for said mono-alkyl amine m′ and m are independently chosen from an integer ranging from 4 to 8. This invention also pertains to the process of using these compositions to remove a patterned photoresist from a substrate. 3. The composition of claim 2 , wherein Ra claim 2 , Ra claim 2 , Ra claim 2 , and Raare independently selected from a C-1 to C-4 linear alkyl claim 2 , or a benzylic moiety.4. The composition of claim 1 , wherein said tetraalkylammonium hydroxide is selected from the group consisting of tetramethylammonium hydroxide claim 1 , tetraethylammonium hydroxide claim 1 , tetrapropylammonium hydroxide claim 1 , tetrabutylammonium hydroxide claim 1 , and benzyltrimethylammonium hydroxide.5. (canceled)6. The composition of claim 1 , wherein said tetraalkylammonium hydroxide is present in the composition in an amount from about 0.5 wt % to about 10 wt % of said composition.7. (canceled)8. The composition of claim 1 , wherein the composition further comprises water in an amount from about 1 wt % to about 20 wt % of said composition.9. (canceled)10. The composition of claim 1 , wherein the composition is substantially water-free.1218.-. (canceled)19. The composition of claim 1 , wherein the benzylic alcohol is present in the composition in an amount from about 30 wt % to about 90 wt % of said composition.2021.-. (canceled)22. The composition of claim 1 , wherein said glycol component comprises a single glycol compound.23. The composition of ...

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Номер записи: 82
09-03-2017 дата публикации

Semiconductor cleaning process system and methods of manufacturing semiconductor devices

Номер: US20170069513A1
Автор: Hyo-san Lee, Ji-Hoon Jeong, Jung-min Oh, ln-Gi KIM, Mi-Hyun PARK, Seok-Hoon Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor cleaning process system includes a process chamber configured to hold a semiconductor substrate, a cleaning solution supply unit configured to provide a cleaning solution to the process chamber, the cleaning solution including an organic fluoride, an organic acid and an organic solvent, a recycling unit configured to collect the cleaning solution discharged from the process chamber, a first concentration measuring unit configured to evaluate a fluorine concentration of a collected solution in the recycling unit, and a sub-cleaning solution supply unit configured to provide the organic fluoride to the cleaning solution supply unit based on the fluorine concentration evaluated by the first concentration measuring unit.

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Номер записи: 83
19-03-2015 дата публикации

PROCESS FOR REMOVING POLYMERIC FOULING

Номер: US20150075561A1
Автор: Dorton Michael R., Gardner, SR. GARY L.
Принадлежит:

A process is provided for removing polymeric fouling on process equipment surfaces to restore the efficiency of such equipment. This is accomplished by contacting the fouled equipment with a solvent comprising at least one non-aromatic hydrocarbon compound, or a mixture of one or more non-aromatic organic compounds and one or more aromatic hydrocarbon compounds, for a period of time sufficient to remove the polymeric fouling. 1. A process for dissolving polymeric fouling on process equipment surfaces comprising the steps of:contacting polymeric fouling on one or more process equipment surfaces with a solvent capable of dissolving the polymeric fouling, the solvent comprising at least one non-aromatic organic compound;maintaining contact of the polymeric fouling with the solvent at a temperature of from about 115° F. (about 50° C.) to about 600° F. (about 320° C.) for a time sufficient to dissolve substantially all of the polymeric fouling;recovering the solvent containing polymeric fouling; andseparating a least a portion of the polymeric fouling from the recovered solvent using filtration.2. The process of wherein the solvent comprises from about 5% volume to about 50% volume diphenylethane claim 1 , from about 5% volume to about 50% volume ethylenated benzenes claim 1 , and from about 20% volume to about 80% volume diesel fuel claim 1 , kerosene claim 1 , or a combination of diesel fuel and kerosene.3. The process of including the additional steps of:obtaining a sample of the polymeric fouling from one or more of the fouled process equipment surfaces; andselecting a suitable solvent or custom solvent that dissolves at least a portion of the polymeric fouling sample.4. The process of wherein the polymeric fouling on at least one process equipment surface occurred during a monomer polymerization process.5. The process of wherein the polymeric fouling comprises non-vinyl polymers or copolymers.6. The process of wherein the polymeric fouling comprises polyethylene or ...

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Номер записи: 84
19-03-2015 дата публикации

METHODS FOR THE SELECTIVE REMOVAL OF ASHED SPIN-ON GLASS

Номер: US20150075570A1
Автор: Tu Sheng-hung, WU Hsing-Chen
Принадлежит: ENTEGRIS, INC.

A semi-aqueous removal composition and process for selectively removing spin-on glass relative to a metal gate and/or ILD material from a microelectronic device having said material thereon. The semi-aqueous removal composition can be a fluoride-containing composition or an alkaline composition. 1. A method of selectively removing spin-on glass relative to a material selected from the group consisting of metal gate material , ILD material , and combinations thereof , said method comprising contacting a substrate comprising the spin-on glass and the material with a removal composition , wherein the removal composition selectively removes the spin-on glass relative to the material.2. The method of claim 1 , wherein the metal gate material comprises titanium.3. The method of claim 1 , wherein the ILD material comprises low-k dielectric material.4. The method of claim 1 , wherein the removal rate of the metal gate material is less than about 2 Å min.5. The method of claim 1 , wherein the removal rate of the ILD is less than about 50 Å min.6. The method of claim 1 , wherein the removal rate of SOG is in a range from about 500 to about 2000 Å min.7. The method of claim 1 , wherein the removal composition comprises at least one fluoride claim 1 , at least one metal corrosion inhibitor claim 1 , water claim 1 , and at least one organic solvent.8. The method of claim 7 , wherein the pH of the removal composition is less than about 7.9. The method of claim 7 , wherein the at least one fluoride source comprises a species selected from the group consisting of hydrofluoric acid claim 7 , ammonium fluoride claim 7 , ammonium bifluoride claim 7 , hexafluorosilicic acid (HFSA) claim 7 , ammonium hexafluorosilicate claim 7 , tetrafluoroboric acid claim 7 , ammonium tetrafluoroborate claim 7 , tetrabutylammonium tetrafluoroborate (TBA-BF) claim 7 , hexafluorotantalic acid claim 7 , ammonium hexafluorotantalate claim 7 , and combinations thereof.10. The method of claim 7 , wherein the ...

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Номер записи: 85
05-06-2014 дата публикации

METHOD OF CLEANING FOOD AND BEVERAGE MANUFACTURING AND HANDLING EQUIPMENT

Номер: US20140150823A1
Автор: Ahmed Fahim U., Van Den Bossche Bruno
Принадлежит: DELAVAL HOLDING AB

The present invention is generally directed toward methods of cleaning and descaling surfaces contaminated with food soils, especially clean-in-place systems. More particularly, the methods according to the present invention also provide for sanitizing of surfaces contaminated with food soils. Thus, there is provided a single cleaning cycle that may clean, sanitize, and descale food-soiled surfaces, and in certain embodiments, without the need for a pre-rinse step, using a non-chlorine detergent composition. 1. A method of cleaning soiled food or beverage manufacturing and handling equipment comprising:a cleaning step in which the surfaces of said equipment are contacted with a cleaning solution comprising a non-chlorine detergent composition; anda post-rinsing step in which said equipment surfaces are rinsed with a rinse solution thereby removing residues of said detergent composition remaining on said equipment,wherein the surfaces of said equipment have not been pre-rinsed prior to said cleaning step.2. The method of claim 1 , wherein said cleaning solution is circulated through said equipment in a plurality of passes to effect a reduction of the soils on said equipment surfaces claim 1 , wherein a first portion of the cleaning solution is purged from said equipment following the first pass therethrough.3. The method of claim 2 , wherein said first portion of the cleaning solution that is purged from said equipment comprises less than 25% by volume of the total volume of cleaning solution circulated during said first pass.4. The method of claim 2 , wherein said first portion of the cleaning solution comprises the first runnings of said cleaning solution through said equipment.5. The method of claim 1 , wherein said cleaning step comprises introducing a first cleaning fluid into said equipment and contacting the surfaces thereof claim 1 , and subsequently introducing said cleaning solution into said equipment and contacting the surfaces thereof claim 1 , said ...

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Номер записи: 86
17-03-2016 дата публикации

Method for removing scales in steam generation facility

Номер: US20160075580A1
Автор: Mizuyuki Sakai, Yukimasa Shimura
Принадлежит: Kurita Water Industries ltd

Provided is a method for removing a scale in a steam generation facility, whereby it becomes possible to remove a scale deposited on the inside of a boiler vessel during the operation of a boiler without causing corrosion of the boiler. A method for removing a scale in a steam generation facility is disclosed, wherein in the steam generation facility, a pH of boiler water is adjusted to 11.3 or more, and a polyacrylic acid having a weight average molecular weight that is 0.50 to 2.00 times a reference weight average molecular weight as calculated from the following calculation formula (1), or a salt thereof, is added in accordance with the pH value of the boiler water during the operation of a boiler, thereby removing a scale deposited on the inside of a boiler vessel: Reference weight average molecular weight=−8462×{(pH value)−11.3}+61538  (1).

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Номер записи: 87
07-03-2019 дата публикации

METHOD FOR TREATING A SEMICONDUCTOR DEVICE

Номер: US20190070640A1
Автор: Ball James A., Parker Scott, WAGGONER Phil
Принадлежит:

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure. 1. A method of treating a sensor array , the sensor array including a plurality of sensors , a sensor of the plurality of the sensors including a sensor pad , a well structure defining a well array corresponding with the sensor array , a well of the well array exposing the sensor pad , a lid attached over the sensor array and the well structure and including an fluid port , a space defined between the lid and the well structure , the method comprising:applying a treatment solution through the fluid port into the space and waiting for a first period between 30 seconds and 30 minutes, the treatment solution including an organo-silicon compound, an acid and an organic solvent;applying a basic solution through the fluid port into the space and waiting for a second period between 20 seconds and 15 minutes; andapplying a rinse solution through the fluid port.2. The method of claim 1 , wherein the organo-silicon compound includes a silane functionalized with an aryl claim 1 , polyaryl claim 1 , alkyl claim 1 , alkoxy claim 1 , halo claim 1 , or cyano moiety claim 1 , or any combination thereof.3. The method of claim 5 , wherein the silane is selected from the group consisting of phenyldimethylchlorosilane claim 5 , tert-butylchlorodiiphenylsilane claim 5 , chlorotripropylsilane claim 5 , (N claim 5 ,N- ...

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Номер записи: 88
17-03-2016 дата публикации

Copper cleaning and protection formulations

Номер: US20160075971A1
Автор: Elizabeth Thomas, Jeffrey A. Barnes, Jun Liu, Laisheng SUN, Peter Wrschka, Steven MEDD
Принадлежит: Advanced Technology Materials Inc

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

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Номер записи: 89
07-03-2019 дата публикации

CLEANING COMPOSITION

Номер: US20190071622A1
Автор: JANKOWSKI Peggy, LUHMANN Nadia, MATURA Michael, Steinmetz Bernhard
Принадлежит:

Provided herein is a cleaning composition including: from 20 to 90% by weight of dimethyl sulfoxide, from 5 to 30% by weight of at least one mineral oil (M), and from 5 to 50% by weight of at least one bipolar organic solvent (L). The ranges of proportions indicated are in each case based on the total weight of the cleaning composition. Also provided herein is a method of cleaning components by employing the cleaning composition, and also the cleaned components themselves. 1. A cleaning composition comprising:from 20 to 90% by weight of dimethyl sulfoxide;from 5 to 30% by weight of at least one mineral oil (M); andfrom 5 to 50% by weight of at least one bipolar organic solvent (L),wherein the ranges of proportions indicated are in each case based on the total weight of the cleaning composition.2. The cleaning composition as claimed in containing:from 35 to 80% by weight of dimethyl sulfoxide;from 10 to 30% by weight of at least one mineral oil (M); andfrom 10 to 40% by weight of at least one bipolar organic solvent (L),in each case based on the total weight of the cleaning composition.3. The cleaning composition as claimed in containing at least one paraffinic and/or naphthenic mineral oil (M).4. The cleaning composition as claimed in containing at least one isoparaffin-based mineral oil (M).5. The cleaning composition as claimed in containing claim 1 , based on the total amount of the cleaning composition claim 1 , not more than 5% by weight of aromatic mineral oils.6. The cleaning composition as claimed in claim containing:at least one bipolar organic solvent (L) selected from the group consisting of (i) monoalcohols having from 4 to 14 carbon atoms, (ii) glycol ethers of monoalcohols having from 4 to 14 carbon atoms, wherein the glycol unit can have a free hydroxyl group or the hydroxyl group can be alkoxylated, and (iii) esters of monoalcohols having from 4 to 14 carbon atoms.7. The cleaning composition as claimed in claim 6 , wherein the monoalcohols are ...

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Номер записи: 90
17-03-2016 дата публикации

SYSTEM AND METHOD FOR PROVIDING A WASH TREATMENT TO A SURFACE

Номер: US20160076456A1
Автор: Ekanayake Sanji, Kalaga Murali Krishna, PABLA Surinder Singh, Scipio Alston Ilford
Принадлежит:

Methods and systems for washing a surface, such as a gas turbine surface, are provided. A wash control system includes a storage tank configured to contain a cleaning agent, a plurality of nozzles, and a supply conduit coupled to the storage tank on a first end and the plurality of nozzles on a second end, wherein the wash control system is configured to deliver the cleaning agent from the storage tank and to discharge the cleaning agent through the plurality of nozzles and the cleaning agent includes an ethylene oxide-propylene oxide block copolymer, sodium dodecyl benzene sulphonate, sodium lauryl sulphate, or a combination including at least one of the foregoing. 1. A method , comprising:mixing a cleaning agent with a liquid to form a cleaning solution, wherein the cleaning agent comprises an ethylene oxide-propylene oxide block copolymer, sodium dodecyl benzene sulphonate, sodium lauryl sulphate, or a combination comprising at least one of the foregoing; andapplying the cleaning solution to a surface.2. The method of claim 1 , wherein the surface is a turbomachine surface or a gas turbine surface.3. The method of claim 2 , wherein the surface is a gas turbine surface that is at least one of a casing claim 2 , a vane claim 2 , a blade claim 2 , a rotor wheel claim 2 , or a turbine.4. The method of claim 1 , wherein the cleaning solution is applied to the surface by wiping or spraying.5. The method of claim 1 , further comprising scouring the surface with an abrasive material.6. The method of claim 1 , further comprising rinsing the surface.7. The method of claim 1 , further comprising agitating the cleaning solution on the surface.8. The method of claim 1 , further comprising aligning drain valves of a gas turbine.9. The method of claim 1 , further comprising steam cleaning the surface with the cleaning solution.10. The method of claim 1 , wherein the cleaning agent is applied using wash nozzles of a gas turbine.11. The method of claim 1 , wherein the cleaning ...

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Номер записи: 91
15-03-2018 дата публикации

COMPOSITIONS AND METHODS THAT PROMOTE CHARGE COMPLEXING COPPER PROTECTION DURING LOW PKA DRIVEN POLYMER STRIPPING

Номер: US20180074408A1
Автор: Moore John Cleaon
Принадлежит:

The present invention is a charge complexing chemical composition that protects metal during polymer removal. The polymer coatings include crosslinked systems by chemical-amplification and photoacid generated (PAG) means as in epoxies. The system includes a solvent, a charge complexing additive, and an acid that creates a protective complex for sensitive metals during the dissolving and rinsing practice needed for processing microelectronic parts. The composition can be utilized with a method for removing partial and fully cured crosslinked coatings that originate from chemical amplification or PAG-epoxy photoimageable coatings. 1. A composition that creates a charge complex with metals as a means of protection during a polymer coating removal process , comprising:a solvent;an organic acid having a pKa<3; andan additive exhibiting charge complexing character.2. The composition according to claim 1 , wherein said solvent is tetrahydrofurfuryl alcohol (THFA).3. The composition according to claim 2 , wherein THFA is present at concentrations of >40% w/w.4. The composition according to claim 1 , wherein the organic acid of pKa<3 is selected from the group consisting of carboxylic acid and sulfonic acid.5. The composition according to claim 4 , wherein the carboxylic acid is selected from the group consisting of oxalic acid and maleic acid.6. The composition according to claim 5 , wherein the carboxylic acid is maleic acid and is present at concentrations of 0.25-1 molar.7. The composition according to claim 4 , wherein the sulfonic acid is selected from the group consisting of methanesulfonic acid claim 4 , para-toluenesulfonic acid claim 4 , and dodecylbenzenesulfonic acid.8. The composition according to claim 7 , wherein the sulfonic acid is dodecylbenzenesulfonic acid and is present at concentrations of 0.25-1 molar.9. The composition according to claim 1 , wherein said additive exhibiting charge complexing character is selected from the group consisting of ...

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Номер записи: 92
19-03-2015 дата публикации

MANUFACTURING PROCESS FOR AN ANTI-LIME SCALE PRODUCT

Номер: US20150080281A1
Автор: BELARBI Zineb, Chaal Lila, Chaussec Fabrice Guenole, Gamby Jean Olivier, Makhloufi Laid, Saidani Boualem, Sotta Bruno, Tribollet Bernard
Принадлежит:

This invention concerns the process for the manufacture of an “anti-lime scaling” product, that is, a product designed to inhibit the formation of lime scale in elements such as pipes or hoses that could be subject to deterioration over time due to lime scale deposits. Specifically, the process of the invention is for an ecological anti-lime scale product. For this, the process according to the invention comprises a preparation step () of vegetal matter from the Caryophyllacae family, an infusion step () of this vegetal matter, a filtration step () of this infusion and a preparation step () of the anti-lime scale solution from a filtrate obtained during the filtration step. 1. A process for the manufacture of an anti-lime scale product , including at least the following steps:a preparation step of vegetal matter including saponosides, flavonoids, monosaccharides and holosides,an infusion step of this vegetal matter,a filtration step for this infusiona preparation step of the anti-lime scale solution using a filtrate obtained during the filtration step wherein the infusion step is performed using boiled water and that the vegetal matter come from plants from at least one of the following families: Caryophyllaceae, Asteraceae, Illecebraceae or Urticaceae.2. The process according to claim 1 , wherein the vegetal matter is comprised of catechols.3. The process according to claim 2 , wherein it comprises a secondary fractioning step using a filtrate obtained during the filtration step.4. The process according to claim 3 , wherein it comprises a secondary fractioning step using a polar fraction obtained during the initial fractioning step.5. The process according to claim 4 , wherein the separation of compounds carried out in the secondary fractioning step claim 4 , takes place according the polarity gradient.6. The process according to claim 4 , wherein it comprises a selection step of intermediate polarity elements from the secondary fractionary step.7. The process ...

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Номер записи: 93
05-03-2020 дата публикации

THINNER COMPOSITION

Номер: US20200071640A1
Автор: LEE Du Won, LEE Myung Ho, LEE Sang Dae, SONG Myung Geun
Принадлежит:

A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C-Calkyl C-Calkoxy propionate, propylene glycol C-Calkyl ether, and propylene glycol C-Calkyl ether acetate. 1. A method of removing photoresist on a substrate using a thinner composition comprising C-Calkyl C-Calkoxy propionate , propylene glycol C-Calkyl ether , and propylene glycol C-Calkyl ether acetate.2. The method of claim 1 , wherein the thinner composition comprises 20 to 45% by weight of C-Calkyl C-Calkoxy propionate claim 1 , 5 to 55% by weight of propylene glycol C-Calkyl ether claim 1 , and 20 to 60% by weight of propylene glycol C-Calkyl ether acetate claim 1 , based on the total weight of the thinner composition.3. The method of claim 1 , wherein the C-Calkyl C-Calkoxy propionate is any one or a mixture of two or more selected from the group consisting of methyl methoxy propionate claim 1 , methyl ethoxy propionate claim 1 , ethyl methoxy propionate claim 1 , and ethyl ethoxy propionate.4. The method of claim 1 , wherein the propylene glycol C-Calkyl ether is at least one selected from the group consisting of propylene glycol methyl ether claim 1 , propylene glycol ethyl ether claim 1 , propylene glycol propyl ether claim 1 , and propylene glycol butyl ether.5. The method of claim 1 , wherein the propylene glycol C-Calkyl ether acetate is at least one selected from the group consisting of propylene glycol methyl ether acetate claim 1 , propylene glycol ethyl ether acetate claim 1 , propylene glycol propyl ether acetate claim 1 , propylene glycol isopropyl ether acetate claim 1 , and propylene glycol butyl ether acetate.6. The method of claim 1 , wherein the thinner composition further comprises at least one selected from C-Calkyl hydroxyisobutyrate and ...

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Номер записи: 94
05-03-2020 дата публикации

TREATMENT OF SULFIDE SCALES

Номер: US20200071641A1
Автор: Cooper Brent, Hull Katherine Leigh
Принадлежит: Saudi Arabian Oil Company

Treating a sulfide scale includes contacting the sulfide scale with an oxidizing composition that includes a first oxidizer and a second oxidizer. 1. A method comprising treating iron sulfide scale associated with a subterranean formation , the treating comprising contacting the iron sulfide scale with an aqueous oxidizing composition comprising ammonium persulfate and a bromate.2. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing solution dissolves at least a majority of the iron sulfide scale contacted by the aqueous oxidizing solution.3. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing composition occurs for less than 96 hours.4. The method of claim 1 , wherein the aqueous oxidizing composition dissolves the iron sulfide scale faster and to a greater extent than the aqueous oxidizing composition without the ammonium persulfate claim 1 , and wherein the aqueous oxidizing composition dissolves the iron sulfide scale faster and to a greater extent than the aqueous oxidizing composition without the bromate.5. The method of claim 1 , wherein the bromate comprises sodium bromate.6. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing composition comprises pumping the aqueous oxidizing composition into the subterranean formation.7. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing composition comprises pumping the aqueous oxidizing composition through equipment in the subterranean formation.8. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing composition comprises removing equipment from the subterranean formation and applying the aqueous oxidizing composition to the equipment as removed.9. The method of claim 1 , wherein contacting the iron sulfide scale with the aqueous oxidizing composition comprises applying the aqueous oxidizing composition to downstream ...

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Номер записи: 95
05-03-2020 дата публикации

POST CMP CLEANING COMPOSITIONS FOR CERIA PARTICLES

Номер: US20200071642A1
Автор: DAS Atanu Kumar, THOMAS Elizabeth, WHITE Daniela, WHITE Michael
Принадлежит:

The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device. 1. A composition comprising(i) at least one oxidizing agent;(ii) at least one complexing agent;(iii) at least one cleaning agent;(iv) at least one quaternary ammonium or quaternary phosphonium compound or inorganic hydroxide; and(v) water.2. The composition of claim 1 , wherein the oxidizing agent is chosen from hydrogen peroxide claim 1 , periodic acid claim 1 , t-butylhydroperoxide claim 1 , peracetic acid claim 1 , potassium persulfate claim 1 , ammonium persulfate claim 1 , potassium peroxysulfate claim 1 , potassium permanganate claim 1 , and urea hydrogen peroxide.3. The composition of claim 1 , wherein the complexing agent is chosen from compounds the general formula NRRR claim 1 , wherein R claim 1 , Rand Rmay be the same or different from one another and are chosen from hydrogen claim 1 , straight-chain or branched C-Calkyl claim 1 , straight-chain or branched C-Chydroxyalkyl claim 1 , and C-Calkyl ethers of straight chain or branched C-Chydroxyalkyl groups.4. The composition of claim 1 , wherein the complexing agent is chosen from C-Calkanolamines.5. The composition of claim 1 , wherein the complexing agent is chosen from 4-(2-hydroxyethyl)morpholine (HEM) claim 1 , 1 claim 1 ,2-cyclohexanediamine-N claim 1 ,N claim 1 ,N′ claim 1 ,N′-tetraacetic acid (CDTA) claim 1 , ethylenediaminetetraacetic acid (EDTA) claim 1 , m-xylenediamine (MXDA) claim 1 , iminodiacetic acid (IDA) claim 1 , 2-(hydroxyethyl)iminodiacetic acid (HIDA) claim 1 , nitrilotriacetic acid claim 1 , thiourea claim 1 , 1 claim 1 ,1 claim 1 ,3 claim 1 ,3-tetramethylurea claim 1 , urea claim 1 , urea derivatives ...

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Номер записи: 96
05-03-2020 дата публикации

METHOD OF CLEANING OXIDATION OVEN AND METHOD OF PRODUCING OXIDIZED FIBER, CARBON FIBER, AND GRAPHITIZED FIBER

Номер: US20200071856A1
Автор: Kuji Yusuke, Uchiyama Masaomi, Yamamoto Wataru
Принадлежит:

A method of cleaning an oxidation oven that subjects a polyacrylonitrile-based precursor fiber for carbon fiber to an oxidation treatment in an oxidizing atmosphere, wherein the oxidation oven has a mechanism for circulating an oxidizing gas internally, the method including the steps of: causing a liquid to come in contact with dust adhering to a wall surface of the oxidation oven so that pressure in a direction perpendicular to the wall surface is 2 MPa or more; discharging the liquid out of the oxidation oven to discharge dust peeled off from the wall surface out of the oxidation oven; and circulating an oxidizing gas having a temperature of 40° C. or higher in the oxidation oven. 17-. (canceled)8. A method of cleaning an oxidation oven that subjects a polyacrylonitrile-based precursor fiber for carbon fiber to an oxidation treatment in an oxidizing atmosphere , whereinthe oxidation oven has a mechanism for circulating an oxidizing gas internally,the method comprising the steps of:causing a liquid to come in contact with dust adhering to a wall surface of the oxidation oven so that pressure in a direction perpendicular to the wall surface is 2 MPa or more;discharging the liquid out of the oxidation oven to discharge dust peeled off from the wall surface out of the oxidation oven; andcirculating an oxidizing gas having a temperature of 40° C. or higher in the oxidation oven.9. The method according to claim 8 , wherein claim 8 , after the oxidizing gas is circulated claim 8 , the oxidizing gas is discharged out of the oxidation oven to further discharge the dust peeled off from the wall surface out of the oxidation oven.10. The method according to claim 9 , wherein claim 9 , after the oxidizing gas is circulated in the oxidation oven claim 9 , a direction or velocity of the oxidizing gas in the oxidation oven is switched claim 9 , and thereafter the dust peeled off from the wall surface is discharged out of the oxidation oven.11. The method according to claim 8 , ...

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Номер записи: 97
18-03-2021 дата публикации

AMBIENT MOISTURE-ACTIVATED HARD SURFACE TREATMENT POWDER

Номер: US20210079319A1
Автор: Bergstrom Chris, Fu Edward, Wozniak Mark
Принадлежит:

Ambient moisture-activatable surface treatment powders containing persalt, positively charged phase transfer agent and alkaline pH buffering may be activatable without the addition of liquid. Some ambient moisture-activatable surface treatment powders are substantially free of bleach activators and/or chlorine. Methods of use of ambient moisture activatable powders include applying them to the surfaces to be treated. 1. An ambient moisture-activatable surface treatment powder comprising:(a) less than 50% by weight of the surface treatment powder of persalt;(b) positively charged phase transfer agent; and(c) alkaline pH buffering salt.2. The ambient moisture-activatable surface treatment powder of claim 1 , wherein the persalt is selected from the group of: percarbonate salt claim 1 , perborate salt claim 1 , perphosphate salt claim 1 , persulfate salt claim 1 , persilicate salt claim 1 , peroxide salt claim 1 , peracetate salt and combinations thereof.3. The ambient moisture-activatable surface treatment powder of claim 1 , wherein the positively charged phase transfer agent is selected from the group of: quaternary ammonium salt claim 1 , phosphonium salt claim 1 , sulfonium salt and combinations thereof.4. The ambient moisture-activatable surface treatment powder of claim 1 , wherein the alkaline pH buffering salt comprises one or more monocationic salt(s).5. The ambient moisture-activatable surface treatment powder of claim 4 , wherein the monocationic carbonate salt is selected from the group of: sodium carbonate claim 4 , potassium carbonate claim 4 , lithium carbonate claim 4 , ammonium carbonate and combinations thereof.6. The ambient moisture-activatable surface treatment powder of claim 1 , comprising from about 5% to about 49% by weight of the surface treatment powder of the persalt.7. The ambient moisture-activatable surface treatment powder of claim 1 , comprising from about 0.5% to about 30% by weight of the positively charged phase transfer agent claim ...

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Номер записи: 98
16-03-2017 дата публикации

Tin pull-back and cleaning composition

Номер: US20170076939A1
Автор: Jerry Jhih-Jheng KE, Tse Wei YU, Yi-Ping Cheng
Принадлежит: BASF SE

The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

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Номер записи: 99
24-03-2022 дата публикации

Etchant Compositions

Номер: US20220093412A1
Автор: Hsu Chia-Jung
Принадлежит:

Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions. 1. A composition comprising: i. water;', 'ii. a water-miscible organic solvent;', 'iii. N-methylmorpholine-N-oxide; and', 'iv. dimethyl sulfone;, 'a. a solvent composition comprisingb. an oxidizing agent;c. a chelating agent;d. a corrosion inhibitor;e. at least one etchant or pH adjustor.2. The composition of claim 1 , wherein the water-miscible solvent is chosen from diethylene glycol monobuty ether and diethylene glycol monoethyl ether or a mixture thereof.3. The composition of claim 1 , wherein the oxidizing agent is hydrogen peroxide.4. The composition of claim 5 , wherein the etchant or pH adjustor is chosen from choline hydroxide and ammonium hydroxide.5. The composition of claim 1 , wherein the etchant or pH adjustor is ammonium hydroxide.6. The composition of claim 1 , wherein the corrosion inhibitor is chosen from benzotriazole and phosphoric acid.7. The composition of claim 1 , further comprising a surfactant.8. A method for removing titanium nitride and/or photoresist etch residue from a microelectronic device claim 1 , which comprises contacting said device with the composition of .9. A kit including claim 1 , in one or more containers claim 1 , one or more components a. through e. claim 1 , as claimed in . This invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues in the presence of other materials.Photoresist masks are commonly used in the semiconductor industry to pattern materials such as semiconductors ...

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