Photoresist Cleaning Composition Used in Photolithography and a Method for Treating Substrate Therewith

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith. 1. A photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 60-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) , sulfolane or dimethylsulfone or mixtures thereof , and at least one additional organic solvent or two or more additional organic solvents; (c) 0.5-15 mass % of at least one corrosion inhibitor or a mixture of two or more corrosion inhibitors; and (d) 0.5-25 mass % of water.2. The photoresist cleaning composition of claim 1 , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 82-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and at least one additional organic solvent or two or more additional organic solvents; (c) 1-5 mass % of at least one corrosion inhibitor or mixtures of two or more corrosion inhibitors; and (d) 1-10 mass % of water.3. The photoresist cleaning composition of claim 1 , wherein (b) comprises 80-96 mass % said dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and 1-4 mass % of said at least one additional organic solvent or two or more additional organic solvents; and said (c) comprises 1-5 mass %; and said (d) comprises 1-10 mass %.4. The photoresist cleaning composition of claim 2 , wherein said (c) comprises a mixture of two or more ...

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith