Low K precursors having superior integration attributes

The invention provides low K precursors having superior integration attributes. A porous organosilica glass film is deposited via a deposition process comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

Photoresist Cleaning Composition Used in Photolithography and a Method for Treating Substrate Therewith

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith. 1. A photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 60-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) , sulfolane or dimethylsulfone or mixtures thereof , and at least one additional organic solvent or two or more additional organic solvents; (c) 0.5-15 mass % of at least one corrosion inhibitor or a mixture of two or more corrosion inhibitors; and (d) 0.5-25 mass % of water.2. The photoresist cleaning composition of claim 1 , which comprises (a) 0.5-5 mass % of at least one quaternary ammonium hydroxide or mixtures of two or more quaternary ammonium hydroxides; (b) 82-97.5 mass % of a mixture of water-soluble organic solvent comprising dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and at least one additional organic solvent or two or more additional organic solvents; (c) 1-5 mass % of at least one corrosion inhibitor or mixtures of two or more corrosion inhibitors; and (d) 1-10 mass % of water.3. The photoresist cleaning composition of claim 1 , wherein (b) comprises 80-96 mass % said dimethylsulfoxide (DMSO) claim 1 , sulfolane or dimethylsulfone or mixtures thereof claim 1 , and 1-4 mass % of said at least one additional organic solvent or two or more additional organic solvents; and said (c) comprises 1-5 mass %; and said (d) comprises 1-10 mass %.4. The photoresist cleaning composition of claim 2 , wherein said (c) comprises a mixture of two or more ...

Chemical Mechanical Planarization (CMP) Composition and Methods Therefore for Copper and Through Silica Via (TSV) Applications

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations. 3. The copper chemical mechanical polishing (CMP) composition of claim 1 , wherein the organic amine is selected from the group consisting of ethylenediamine claim 1 , propylenediamine claim 1 , butylenediamine claim 1 , and the combinations thereof.4. The copper chemical mechanical polishing (CMP) composition of claim 1 , whereinthe tris chelators are selected from (1) one of the organic amine selected from the group consisting of ethylenediamine, propylenediamine, and butylenediamine; and (2) two of different amino acids, two of different amino acid derivatives, or combinations of one amino acid with one amino derivative.5. The copper chemical mechanical polishing (CMP) composition of claim 1 , comprising0.0025 wt. % to 2.5 wt. % of colloidal silica or high purity colloidal silica;0.5 wt. % to 10.0 total wt. % of (1) one of the organic amine selected from the group consisting of ethylenediamine, propylenediamine, and butylenediamine; and (2) two of the amino acids, two of the amino acid derivatives, or combinations of one of the amino acid with one of the amino derivative; wherein the two amino acids are different and the two of the amino acid derivatives are different; 'the composition ...

Low K Precursors Providing Superior Integration Attributes

A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Low dishing copper chemical mechanical planarization

Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤ 100 nm, ≤ 50 nm, ≤ 40 nm, ≤ 30 nm, or ≤ 20nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

Low dishing copper chemical mechanical planarization

Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤ 100 nm, ≤ 50 nm, ≤ 40 nm, ≤ 30 nm, or ≤ 20nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

Chemical mechanical planarization (cmp) composition and methods therefore for copper and through silica via (tsv) applications

Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing compositions comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations thereof; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, an organic quaternary ammonium salt, a corrosion inhibitor, an oxidizer, a pH adjustor and biocide are optionally used in the compositions.

Process For Restoring Dielectric Properties

A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

Low Dishing Copper Chemical Mechanical Planarization

Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤100 nm, ≤50 nm, ≤40 nm, ≤30 nm, or ≤20 nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

用於銅及矽通孔（tsv）應用的化學機械平坦化（cmp）組合物及其方法

本發明提供一種化學機械平坦化(CMP)調配物，其提供用於寬廣或先進節點的銅或矽通孔(TSV)且具有高及可調整的Cu移除速率及低銅表面凹陷。該CMP組合物提供高Cu膜對其它阻障層，諸如Ta、TaN、Ti及TiN；及介電膜，諸如TEOS、低k及超低k膜之選擇性。該CMP研磨調配物包含溶劑、研磨料、至少三種選自於由胺基酸、胺基酸衍生物、有機胺及其組合所組成之群的螯合劑，其中該至少一種螯合劑係胺基酸或胺基酸衍生物。額外地，在該調配物中使用有機四級銨鹽、腐蝕抑制劑、氧化劑、pH調整劑及抗微生物劑。

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

Semiconductive device having resist poison aluminum oxide barrier and method of manufacture

The invention provides a semiconductive device that comprises interlevel dielectric layers that are located over devices. The interlevel dielectric layers have a dielectric constant (k) less than about 4.0. Interconnects are formed within or over the interlevel dielectric layers. The semiconductive device further comprises an aluminum oxide barrier located between at least one pair of the interlevel dielectric layers. The aluminum oxide barrier is substantially laterally co-extensive with the interlevel dielectric layers.

Dielectric barrier deposition using oxygen containing precursor

Dielectric Barrier Deposition Using Oxygen Containing Precursor

A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.

Precursors for depositing group 4 metal-containing films

Dielectric barrier deposition using oxygen containing precursor

A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.

Precursors for Depositing Group 4 Metal-Containing Films

Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R 1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R 2 is an alkyl group comprising from 1 to 10 carbon atoms; R 3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R 4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R 2 and R 4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

Low dishing copper chemical mechanical planarization

Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten

優れた集積化特性を提供する低ｋ前駆体

【課題】多孔質の有機シリカガラス膜を製造するための堆積方法を提供する。 【解決手段】真空チャンバーに、有機シラン又は有機シロキサンの１つの前駆体と、該前駆体とは異なるポロゲンであって、本質的に芳香族であるポロゲンとを含むガス状試薬を導入する工程、前記チャンバー中の前記ガス状試薬にエネルギーを適用して該ガス状試薬の反応を引き起こしてポロゲンを含有する膜を堆積させる工程、並びにＵＶ放射によって有機材料の実質的にすべてを除去して気孔を有しかつ２．６未満の誘電率を有する多孔質の膜を提供する工程を含む多孔質の有機シリカガラス膜を製造するための堆積方法が提供される。 【選択図】図１

Low k precursors providing superior integration attributes

Integrated circuit formation using a silicon carbon film

A silicon carbide (SiC) film for use in backend processing of integrated circuit (100) manufacturing is generated by including hydrogen in the reaction gas mixture. This SiC containing film is suitable for integration into etch stop layers, dielectric cap layers and hard mask layers in interconnects of integrated circuits.