МАТЕРИАЛ ДЛЯ КОНВЕРСИИ ВАКУУМНОГО УЛЬТРАФИОЛЕТОВОГО ИЗЛУЧЕНИЯ В ИЗЛУЧЕНИЕ ВИДИМОГО ДИАПАЗОНА В ВИДЕ АМОРФНОЙ ПЛЕНКИ ОКСИДА КРЕМНИЯ SiOSНА КРЕМНИЕВОЙ ПОДЛОЖКЕ

Изобретение относится к люминесцентным материалам для конверсии вакуумного ультрафиолетового излучения в излучение видимого диапазона, предназначенным для создания функциональных элементов фотонных приборов нового поколения, а также для контроля жесткого ультрафиолетового излучения в вакуумных технологических процессах. Предложенный материал характеризуется тем, что толщина аморфной пленки оксида кремния SiOSсоставляет 20-70 нм, а ионы кислорода содержатся в количестве, при котором стехиометрический коэффициент «х» находится в пределах от 0,01 до 0,45. Изобретение обеспечивает увеличение интенсивности синего излучения материала и отсутствие красного свечения при сохранении конверсии вакуумного ультрафиолетового излучения в видимое. 3 ил., 1 табл., 5 пр.

УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ МНОГОКОМПОНЕНТНЫХ И МНОГОСЛОЙНЫХ ПОКРЫТИЙ

Изобретение относится к устройству для формирования многокомпонентных и многослойных покрытий и может быть использовано в автомобилестроении, в медицине при создании защитных и биосовместимых слоев дентальных и ортопедических имплантатов, для изготовления тонкопленочных интегральных аккумуляторов и в химических реакторах. Вакуумная камера (1) включает плазменно-дуговой источник (2) с магнитной системой, катодом (3) и анодом (4) с продольной осью 01-02, источник газовой плазмы (8) с первой электромагнитной катушкой ( 9), со второй электромагнитной катушкой источника (10) и с системой напуска и контроля технологических газов (11). Держатель (20) подложки (21) размещен симметрично оси O3-O4 источника газовой плазмы (8) и включает средства откачки (30). Магнетронный источник (36) имеет продольную ось 05-06. Магнитная система плазменно-дугового источника (2) включает электромагнитную катушку плазменно-дугового источника (5). Источник газовой плазмы (8) выполнен в виде кварцевого цилиндра (12 ...

УСТРОЙСТВО ДЛЯ ЛИЧНОЙ ГИГИЕНЫ, ИМЕЮЩЕЕ СКОЛЬЗЯЩУЮ ПОВЕРХНОСТЬ

Изобретение относится к области устройств для срезания волос. Устройство для срезания волос содержит поверхность для скользящего взаимодействия с кожей и/или волосами пользователя и зону для срезания волос. Поверхность имеет твердое покрытие со смазывающей способностью. Твердое покрытие содержит внедренные в него частицы. Указанные частицы содержат соединенные с ними ковалентными связями концевые гидрофильные полимерные цепи. Плотность частиц увеличивается по направлению к наружной поверхности твердого покрытия. Изобретение также включает способ получения твердого покрытия со смазывающей способностью на поверхности устройства для срезания волос. Техническим результатом является обеспечение продолжительного смазывающего эффекта при срезании волос. 2 н. и 8 з.п. ф-лы.

ДЕТАЛЬ ГАЗОВОЙ ТУРБИНЫ, СНАБЖЕННАЯ ЗАЩИТНЫМ ПОКРЫТИЕМ, И СПОСОБ НАНЕСЕНИЯ ЗАЩИТНОГО ПОКРЫТИЯ НА МЕТАЛЛИЧЕСКУЮ ПОДЛОЖКУ ИЗ СУПЕРСПЛАВА

Деталь газовой турбины содержит металлическую подложку из суперсплава, связующий нижний слой и внешнее керамическое покрытие. Связующий нижний слой сформирован на подложке и содержит интерметаллический материал, содержащий алюминий, никель и платину. Внешнее керамическое покрытие прикреплено пленкой окиси алюминия, образованной на связующем нижнем слое. Связующий нижний слой в основном содержит трехкомпонентную систему Ni-Pt-Al, состоящую из структуры типа α-NiPt с добавками алюминия, в частности систему Ni-Pt-Al, имеющую состав NizPtyAlx, где z, у, х подобраны таким образом, что 0,05 Подробнее

Способ нанесения антиадгезивного антибактериального покрытия на ортопедические имплантаты из титана и нержавеющей стали

Изобретение относится к области медицины, а именно к способу нанесения антиадгезивного антибактериального покрытия на ортопедические имплантаты из титана и нержавеющей стали, включающему нанесение покрытия на предварительно обработанную поверхность металлического имплантата, при этом поверхность металлических имплантатов из титана и нержавеющей стали подвергают очистке методом ионного травления в герметичной камере, которую предварительно вакуумируют до остаточного давления 9⋅10-1⋅10Торр, с последующим заполнением камеры аргоном и вакуумированием камеры до остаточного давления 4⋅10-1⋅10Торр, а ионное травление выполняют ионами аргона с энергией 0,7-3,0 кэВ в течение 4-8 мин, затем на поверхность ортопедических имплантатов из титана и из нержавеющей стали наносят дуальным распылением с двух магнетронных источников антиадгезивное антибактериальное покрытие в виде атомов серебра и углерода в виде тетраэдрического алмаза типа ta-C, причем используют магнетронный источник углеродной плазмы с ...

Гибридный сегментированный электрод для металлизированного пленочного конденсатора

Полезная модель относится к электротехнике, а именно к электроду металлизированного пленочного конденсатора постоянной емкости, и может быть использована при изготовлении конденсаторов в импульсной и силовой технике. Уменьшение сопротивления электрода конденсатора является техническим результатом, который достигается за счет того, что электрод выполнен из тонкой электропроводящей пленки и образован элементами с низким поверхностным сопротивлением, электрически соединенными между собой элементом с более высоким поверхностным сопротивлением, при этом элементы с низким поверхностным сопротивлением не имеют прямого контакта друг с другом, а область между ними представляет собой элемент с более высоким поверхностным сопротивлением. Элементы с низким поверхностным сопротивлением имеют поверхностное сопротивление в диапазоне 3-6 Ом/квадрат, а элемент с более высоким поверхностным сопротивлением имеет поверхностное сопротивление в диапазоне 20-40 Ом/квадрат. Элементы с низким поверхностным сопротивлением ...

Способ изготовления металлокерамических зубных протезов

Изобретение относится к ортопедической стоматологии при изготовлении металлокерамических зубных протезов и раскрывает способ изготовления металлокерамических зубных протезов с упрочненной адгезией между каркасом-основой и облицовочным покрытием протеза. Способ включает отливку каркаса - основы зубного протеза из разрешенного и допущенного для применения в стоматологии для изготовления металлокерамических изделий сплава металлов, очистку отлитого каркаса - основы протеза от окислов, нанесение на каркас - основу зубного протеза облицовочного керамического покрытия из разрешенного и допущенного для применения в стоматологии для изготовления металлокерамических изделий керамического материала. Изобретение позволяет повысить качество и долговечность зубных протезов в процессе эксплуатации, упростить и ускорить процесс изготовления металлокерамических протезов, повысить безопасность и производительность труда изготовителей зубных протезов, повысить качество стоматологической помощи населению ...

Способ получения антибактериального кальцийфосфатного покрытия на ортопедическом имплантате, имеющем форму тела вращения и оснастка для его осуществления (варианты)

Группа изобретений относится к области медицины, а именно к ортопедии и травматологии, и раскрывает способы нанесения антибактериальных кальцийфосфатных покрытий на ортопедические имплантаты, в частности интрамедуллярные фиксаторы и пины. Способ включает распыление мишени, в плазме высокочастотного разряда в вакуумной камере магнетронной распылительной системы, в атмосфере аргона на ортопедическом имплантате, размещенном в оснастке для фиксатора или пина, на поворотном столе вакуумной камеры, причем мишень выполнена из цинкзамещенного гидроксиапатита или медьзамещенного гидроксиапатита. Покрытие формируют следующим образом: - откачивают вакуумную камеру до остаточного давления (5±0,5)*10-6Торр, заполняют аргоном и вакуумируют до рабочего давления (8±0,5)*10-4Торр, проводят ионную очистку фиксатора или пина; зажигают ВЧ магнетронный разряд при рабочем давлении (2±1)*10-3Торр на мощности 50 Вт с последующим ступенчатым интервалом в 50 Вт подъемом мощности до 250 Вт и выдержкой по 10 минут ...

УСТРОЙСТВО ДЛЯ НАНЕСЕНИЯ ФУНКЦИОНАЛЬНЫХ СЛОЁВ ТОНКОПЛЁНОЧНЫХ СОЛНЕЧНЫХ ЭЛЕМЕНТОВ НА ПОДЛОЖКУ ПУТЁМ ОСАЖДЕНИЯ В ПЛАЗМЕ НИЗКОЧАСТОТНОГО ИНДУКЦИОННОГО РАЗРЯДА ТРАНСФОРМАТОРНОГО ТИПА НИЗКОГО ДАВЛЕНИЯ

... 1. Устройство для нанесения функциональных слоев тонкопленочных солнечных элементов на гибкую лентообразную подложку путем осаждения в плазме низкочастотного индукционного разряда трансформаторного типа низкого давления, включающее реакционную камеру, выполненную в виде водоохлаждаемых металлических секций, с подвижной подложкой и разрядную камеру с охватывающими ее магнитопроводами с первичными обмотками, отличающееся тем, что устройство содержит разделенные газовыми шлюзами две и более реакционные камеры, через которые проходит тонкая и гибкая лентообразная подложка шириной не более 600 мм, приводимая в движение лентопротяжным механизмом, каждая реакционная камера выполнена из двух секций, каждая секция реакционной камеры включает патрубок вакуумной откачки, патрубок ввода химических реагентов («газовый душ»), расположенные на противоположных сторонах секции, и смотровые окна, и соединена с несколькими разрядными камерами (двумя и более), каждая разрядная камера выполнена в виде изогнутого ...

МНОГОСТУПЕНЧАТЫЙ СПОСОБ НАНЕСЕНИЯ ПОКРЫТИЯ ДЛЯ ПОЛУЧЕНИЯ ПОЛНОСТЬЮ ОКРАШЕННЫХ КОНСТРУКТИВНЫХ ЭЛЕМЕНТОВ, ПРОФИЛЬ ИЗ ПВХ С ПОКРЫТИЕМ И ПРИМЕНЕНИЕ ВОДНОЙ ПОКРЫВАЮЩЕЙ КОМПОЗИЦИИ В УКАЗАННОМ СПОСОБЕ

... 1. Многостадийный способ нанесения покрытия для покрытия конструктивного элемента подложки, имеющего боковые участки, при этом покрывают по меньшей мере три боковых участка, отличающийся тем, что указанный способ содержит стадии А) продвижения элемента через первую секцию нанесения покрытия на его транспортной стороне для нанесения поверхностного слоя на один или более из нетранспортных боковых участков элемента и В) последующего продвижения указанного элемента в следующие секции нанесения покрытия для нанесения поверхностного слоя на транспортную сторону стадии А) и/или на один или более оставшихся боковых участков указанного элемента.2. Способ нанесения покрытия по п.1, в котором конструктивным элементом является профиль, при этом указанный способ содержит стадии А) продвижения профиля через первую секцию нанесения покрытия на его транспортной стороне для нанесения поверхностного слоя на все нетранспортные боковые участки профиля и В) продвижения указанного профиля во вторую секцию нанесения ...

TRANSPARENTE ELEKTRODE BASIEREND AUF EINER KOMBINATION TRANSPARENTER LEITENDER OXIDE, METALLE UND OXIDE

Die Erfindung betrifft eine Elektrode, umfassend ein transparentes leitendes Oxid (TCO) und einen ultradünnen Metallfilm (UTMF), der auf dem TCO aufgebracht ist. Außerdem ist der UTMF oxidiert oder von einer Oxidschicht bedeckt. Auf diese Weise ist das darunter liegende TCO geschützt/kompatibel mit anderen Materialien und der Verlust an Transparenz ist reduziert.

Verfahren zur Herstellung von Metallschichten enthaltenden Beschichtungssystemen zur Veredelung von Kunststoffoberflächen

Verfahren zum Metallisieren von Papier- oder papieraehnlichen Baendern durch Gasplattieren

VERFAHREN UND EINRICHTUNG ZUM BEHANDELN VON LEITERPLATTEN

DEPOSITED FILMS WITH IMPROVED MICROSTRUCTURES AND METHODS FOR MAKING

IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF SOLID SOLUTIONS OF Cd, S AND Se

... 1283997 Vapour-depositing Cd, S, and Se SIEMENS A G 28 Sept 1970 46117/70 Heading C7F A layer of CdS x Se 1-x where 0 Подробнее

Improvements in or relating to compact electric condensers

... 620,405. Condensers. FEKETE, A. F. April 23, 1946, No. 12180. [Class 37] [Also in Group XL (a)] Layers of inorganic dielectric material and metal are deposited alternately on a supporting base element of the required shape by means of evaporation or cathodic sputtering within a high vacuum chamber, these layers being superposed. The successive periods of deposition are carried out within the same period of evacuation of the chamber. The dielectric and metallic deposits may be of a composite nature, the latter having protective or corrosion resistant properties. A high vacuum chamber 27 contains an assembly of bracket arms 39, rotated by motor 23 and gears 25, carrying supporting base elements 30. Cathodic sputtering electrode 29 and evaporation filament 29a are enclosed within the chamber.

Improvements in or relating to methods of vapour-depositing layers on substrates

In a method of vapour depositing layers containing two or more components having different vapour pressures at the same temperatures, on a substrate in vacuo or at low gas pressure, the components are simultaneously vapourized from separate containers at the same temperature, the dimensions of the exit apertures of the containers being such as to determine the proportions of the components deposited. The examples disclose (1) the deposition of Zn and Te on glass which may be heated during deposition in which case zinc telluride is formed; (2) ZnS and Mn on glass and (3) Cr-Ni on an unspecified substrate. The containers may be cylindrical and arranged coaxially with one partly in the other and the heating may be effected with infrared radiation on H.F. current.

Improvements in or relating to magnetic thin films, and devices incorporating such films

... 890,754. Magnetic structures. GENERAL ELECTRIC CO. Ltd. April 25, 1960 [April 28, 1959], No. 14455/59. Class 38 (2). A magnetic thin film element formed by electrodeposition of 80/20 NiFe alloy on glass is formed or annealed in a magnetic field at an angle to the plane of the film. The film 2 is placed in a furnace 1 at an angle and between polepieces 3, 4 of an electromagnet, heated at 400‹ C. for one hour and allowed to cool. The " easy direction " is found to be the direction of the projection of the field vector in the plane of the film. It is found that the ooercivity in the " easy direction " is reduced by this process, thus facilitating the switching of the magnetization along this direction from one sense to the other.

CONFIGURABLE VACUUM PLANT

VERFAHREN ZUR HERSTELLUNG EINER KOKILLE AUS KUPFERWERKSTOFFEN

PROCESS FOR THE PREPARATION OF LAYERS AND LAYER SYSTEMS AND COATED SUBSTRATE

Zerkleinerungszahnscheibe für einen Körnerprozessor

Die Erfindung betrifft eine Zerkleinerungszahnscheibe (1) für einen Körnerprozessor mit jeweils eine nachlaufende Zahnflanke, einen sogenannten Zahnrücken (7), und eine vorauseilende Zahnflanke, eine sogenannte Zahnbrust (6), aufweisenden Zähnen (4) an ihrer Oberfläche, wobei die Zähne (4) im Bereich des Zahnrückens (7), eine durchgehende oder in Teilzonen aufgeteilte Verschleißschutzzone (12) aufweisen, deren Verschleißwiderstand größer ist als der des Materials des Grundkörpers der Zerkleinerungszahnscheibe, wobei der Grundkörper eine die Form der Zähne (4) bestimmende Zahnstruktur hat und die Verschleißschutzzone (12) unter im Wesentlichen Beibehaltung der Geometrie der Zahnstruktur durch ein Hochenergiestrahlverfahren hergestellt ist. Die Erfindung betrifft ferner ein Verfahren zum Herstellen einer Zerkleinerungszahnscheibe (1) für einen Körnerprozessor mit Zähnen (4) an ihrer Oberfläche.

Procedure for making thin layers of highly pure materials

LAYER SYSTEM COMPRISING A TITANIUM-ALUMINIUM-OXIDE LAYER

COATED OBJECT

Coated metallic products and methods for making the same

The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

METHOD FOR CARRYING OUT HOMOGENEOUS AND HETEROGENEOUS CHEMICAL REACTIONS USING PLASMA

METHOD FOR APPLYING A HIGH-TEMPERATURE LUBRICANT

The present invention relates to a method for applying hexagonal boron nitride to a rough surface, wherein it is intended for the boron nitride to be provided as a temperature-resistant lubricant of the surface. According to the invention, a pin composed of hexagonal boron nitride is rubbed with pressure over the rough surface, such that abraded boron nitride adheres to the surface.

WORKPIECE COATED WITH A SOLID SOLUTION LAYER, METHOD FOR ITSPRODUCTION, USE OF THE WORKPIECE, AND APPARATUS FOR CARRYING OUT THE METHOD

A solid solution layer (C, D) of metalloids is applied on a workpiece by a reactive physical coating technique and has an inclusion ratio of the metalloids which varies continuously over the thickness of the layer. The solid solution layer (C, D) lies on a separating layer (B) on the workpiece. To produce the mixed layer (C, D) titanium is vaporized in a vacuum chamber in a crucible which is moved back and forth in front of the workpiece surfaces to be coated, and two gases are introduced which have different affinity to the vaporized titanium . For the creation of a first partial layer (C) of the solid solution layer (C, D) the inclusion ratio of the gases is varied steadily. During the coating operation the workpieces rotate, so that sometimes their surface is turned toward the crucible and sometimes away from it. The coated workpieces are distinguished by a high resistance to flank wear and cratering (Fig. 3).

METHOD FOR PRODUCING A COATING CONTAINING TITANIUM BORIDE

This invention concerns a method for producing a coating containing at least 80 wt.% titanium boride, in which a coating of 0.1 to 1mm thickness with a maximum porosity of 10 vol.-% and with an oxygen content under 1 wt.% is applied to the surface of a substrate body using plasma spraying in a nearly or totally oxygen-free atmosphere. No metallic powder is added to the spray powder.

Einen Halbleiter aufweisendes Gerät und Verfahren zu seiner Herstellung.

Procédé de fabrication de dispositifs à semi-conducteurs

Verfahren zur Herstellung eines Kondensators und nach dem Verfahren hergestellter Kondensator

Verfahren zum Aufdampfen einer Schicht

Vapour deposition of cadmium sulphur and selenium solid - solns - using separate crucibles at controlled temps

Vapour deposition of a layer of a solid soln. with the compsn. CdSxSe1-x, in which 1 > x >0, for making photo-resists, optical filters and active layers on radiation converters such as solar cells, by vaporizing Cd, S, and Se from separate crucibles with temps. of T1, T2 and T3 respectively and collecting the product in or on a collecting-vessel (pref. of glass or ceramic) at T4 being 120-400 degrees C (pref. 200-400 degrees C).

Verfahren zum Abscheiden von einkristallinen halbleitenden oder metallischen Stoffen

Verfahren zum Niederschlagen eines Kontaktes auf einen Halbleiter

PROCEDURE FOR THE PRODUCTION OF A MOLD FOR STEALING RANK CASTING PLANTS.

Turbomachine component with parting joint, and steam turbine comprising said turbomachine component

The invention relates to a turbomachine component comprising at least two sub-components (4, 5) that are separated by a parting joint (3) and each comprise a sealing surface (6, 7) at said parting joint (3), at least one of the two sealing surfaces (6, 7) being convex in order to form a linear contact of the two sealing surfaces (6, 7). At least one of said sealing surfaces (6, 7) has a coating (9, 10) on it which comprises a hard material, is a maximum of 30[mu]m thick and is applied using a vapour deposition method, or a coating (9, 10) which comprises a chrome-containing alloy, is a maximum of 30[mu]m thick and is applied by means of a vapour deposition method, or is a maximum of 300[mu]m thick and applied using a thermal spraying method.

Nanometer group bunch dispersion and its manufacturing method and manufacturing apparatus thereof, nano Sprengel blueberry [...], nano cluster dispersion

Moulded article, method for producing same, electronic device member, and electronic device

The present invention relates to a moulded article, a method for producing the same, an electronic device member containing the moulded article, and an electronic device comprising the electronic device member. The moulded article has a gas barrier layer formed from at least a material containing oxygen atoms, carbon atoms, and silicon atoms, characterized in that the ratio of oxygen atoms present in the layer gradually decreases while the ratio of carbon atoms present in the layer gradually increases with depth beginning at the surface of the gas barrier layer. The moulded article has excellent gas barrier performance and transparency. Also provided is a method for producing the same, an electronic device member formed from this moulded article, and an electronic device comprising the electronic device member.

PART OF GAS TURBINE PROVIDED With a COATING OF PROTECTION AND METHOD FOR REALIZATION Of a COATING OF PROTECTION ON a METAL SUBSTRATE IN SUPERALLOY

CADMIUM SULFIDE THIN FILM SUSTAINED CONDUCTIVITY DEVICE WITH CERMET SCHOTTKY CONTACT

METHOD FOR MAKING A MONOLITHIC ALL-SOLID BATTERY

Procédé de fabrication de batteries entièrement solides, lesdites batteries comprenant au moins une couche dense contenant des matériaux d'anode (« couche d'anode »), au moins une couche dense contenant des matériaux d'électrolyte solide (« couche d'électrolyte »), et au moins une couche dense contenant des matériaux de cathode (« couche de cathode ») pour obtenir une batterie de structure empilée du type « substrat / anode / électrolyte / cathode / substrat », procédé comprenant les étapes suivantes : a) on dépose une couche dense d'anode et une couche dense de cathode chacune sur son substrat conducteur, lesdits substrats conducteurs pouvant servir comme collecteur de courant anodique et cathodique respectivement ; b) on dépose une couche dense d'électrolyte solide sur au moins une des deux couches obtenues à l'étape a) ; c) on dépose une couche contenant au moins un matériau de liaison Ms sur l'une au moins des couches denses obtenues à l'étape a) et/ou b) ; étant entendu que les dépôts ...

수반응성 Al 복합 재료, 수반응성 Al 합금 용사막, 이 Al 합금 용사막의 제조 방법, 및 성막실용 구성 부재

Al 에 Al 중량 기준으로 0.2 wt％ 이상 2 wt％ 이하의 Bi, 1.5 wt％ 이상 8 wt％ 이하의 Si, 0.2 wt％ 이상 4 wt％ 이하의 Ti, 0.2 wt％ 이상 2 wt％ 이하의 Ce, 및 0.2 wt％ 이상 2 wt％ 이하의 Mg 를 첨가하여 이루어지는 용사용 수반응성 Al 복합 재료. 이 Al 복합 재료로부터 Al 합금 용사막을 얻고, 이 Al 합금 용사막으로 성막실용 구성 부재를 덮는다.

MULTILAYER-COATED CUTTING TOOL, HAVING IMPROVED PEELING RESISTANCE PERFORMANCE WITHOUT THE HARDNESS DECREASE OF A SURFACE

PURPOSE: A multilayer-coated cutting tool is provided to ensure improved peeling resistance performance without the hardness decrease of surface since different coating composition of areas A, B and C are formed on a base member. CONSTITUTION: A multilayer-coated cutting tool comprises a base member and a PVD coating part. The coating part comprises an area C, which is consists of at least two kinds of additional elements of nitride, carbide, boride or their mixture, which are selected from Si, Al, Y and four to six groups. The area C does not have the slope composition of the average content of Si. The area C has a irregular multilayer structure, in which different composition of individual layers X and Y alternately represent. The coating part further comprises a transition area B between an area A and the are C. The area A essentially does not have Si. The area B satisfies the slope composition of the average content of Si in order to increase the average content of Si towards the area ...

Condensateur utilisant une electrode de métal filmogène.

Molybdenum-niobium alloys, sputtering targets containing such alloys, methods of making such targets, thin films prepared therefrom and uses thereof

Alloys comprising: (a) molybdenum present in a majority portion; (b) niobium present in an alloying amount; and (c) a third metal selected from the group consisting of nickel, chromium, titanium, zirconium, hafnium, vanadium and mixtures thereof, wherein the third metal is present in a doping amount; along with sputtering targets prepared therewith, films sputtered using such targets and thin film devices containing such films.

METHOD FOR APPLYING A HIGH-TEMPERATURE LUBRICANT

Reducing radioactive contamination of reactor constructional materials

The constructor materials are in contact with soluble radioactive mateterial. An oxide film is formed ele-electrically on the construction materials during anode polarisation. Iions are eluted from the construction materials and react with oxygen ions dissolved in the liquid. An iron oxide film is formed on the material. A reference electrode is put in the liquid and a potential difference applied between it and the combustion materials. This kept at such a level as to form an oxide film. Liquid containing dissolved oxygen passes through pipe (2) under the action of the circulation pump (4). The hole (8) which is to be given the oxide film is in the circuit.

Surface hardened stainless steel with improved wear resistance and low static friction properties

APPARATUS AND METHOD FOR BULK VAPOUR PHASE CRYSTAL GROWTH

A vapour conduit for use in an apparatus for bulk vapour phase crystal growth, an apparatus for bulk vapour phase crystal growth, and a process for bulk vapour phase crystal growth are described. The vapour conduit is a flow conduit defining a passage means adapted for transport of vapour from a source volume to a growth volume, wherein a flow restrictor is provided in the passage means between the source volume and the growth volume and wherein the flow conduit further comprises a flow director structured to direct vapour flow downstream of the flow restrictor away from a longitudinal centre line of the conduit and for example towards an edge of the conduit.

PROCESS FOR PRODUCING MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND APPARATUS FOR MAGNETIC RECORDING/REPRODUCING

A process for producing a magnetic recording medium having a magnetically divided magnetic recording pattern; the magnetic recording medium; and an apparatus for magnetic recording/reproducing. The process comprises: forming a continuous recording layer on a nonmagnetic substrate; subsequently forming a mask layer comprising any one or more elements selected from the elements Pt, Ru, and Pd on the recording layer so as not to cover part of the recording layer; and thereafter forming a magnetically divided magnetic recording pattern through a magnetic-property alteration step in which that area of the surface of the recording layer which has not been covered with the mask layer is exposed to a reactive plasma or reactive ions generated in the reactive plasma to thereby render the area of the recording layer amorphous and alter the magnetic properties of the area.

SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION

A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium, whereby the enrichment is above natural abundance levels. The inventive method allows reduced gas consumption and reduced waste. The source material is preferably stored and delivered from a sub-atmospheric storage and delivery device to enhance safety and reliability during the selenium ion implantation process.

Method for applying a high-temperature lubricant

The present invention relates to a method for applying hexagonal boron nitride to a rough surface, wherein it is intended for the boron nitride to be provided as a temperature-resistant lubricant of the surface. According to the invention, a pin composed of hexagonal boron nitride is rubbed with pressure over the rough surface, such that abraded boron nitride adheres to the surface.

MULTI-LAYER STRUCTURE HAVING GOOD UV PROTECTION AND SCRATCH PROTECTION

The invention relates to a multi-layer structure containing a thermoplastic substrate, a barrier layer, a UV protection layer, and a cover layer: 1. a thermoplastic substrate material, 2. a barrier coat containing silicon-based precursors, 3. a UV protection layer based on a metal oxide (MeyOx) having a composition of Mey/Ox>1, preferably >1.2, wherein the metal oxide is selected from the group diethyl zinc, zinc acetate, triisopropyl titanate, tetraisopropyl titanate, cerium-β-diketonate, and cerammonium nitrate, 4. a covering layer, wherein the covering layer is formed of a silicon-based precursor having an element gradient in the oxygen concentration and/or carbon or hydrocarbon concentration, wherein the oxygen content of the cover layer close to the UV light-absorbing layer is less than on the opposite side of the cover layer and the carbon content close to the UV light-absorbing layer greater than on the opposite side of the cover layer, which is characterised by an excellent abrasion ...

SUBSTRATE MOVING UNIT FOR DEPOSITION, DEPOSITION APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE DEPOSITION APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD

Provided are a substrate moving unit for use with a deposition apparatus that allows a deposition material to be precisely deposited on a target site of a substrate. The substrate moving unit includes an electrostatic chuck having a first surface on which a substrate is fixable and a magnetic force applying unit disposed on a second surface of the electrostatic chuck. A deposition apparatus including the substrate moving unit, a method of manufacturing an organic light-emitting display apparatus, and an organic light-emitting display apparatus manufactured by using the method are also presented.

HYBRID DIELECTRIC FILM FOR HIGH TEMPERATURE APPLICATION

A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

EVAPORATION METHOD, EVAPORATION DEVICE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE

The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter.

Hard laminated film, method of manufacturing the same and film-forming device

A hard laminated Mm wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 5 nm or more, and the thickness of layer A per layer is 200 nm or less.

Process for the production of composite materials consisting of substrates and metal layers of metastable or instable phases adhering to their surfaces

METHOD FOR MANUFACTURING PASSIVATION FILM

There is provided a method for manufacturing a passivation film that can reproducibly produce a passivation film with a low concentration of oxygen atoms . A passivation film is manufactured by a method of manufacturing a passivation film, the method including a passivation process in which a substrate on the surface of which at least one of germanium and molybdenum is contained is treated with a passivation gas containing an oxygen-containing compound, which is a compound containing an oxygen atom in the molecule, and hydrogen sulfide to form a passivation film containing a sulfur atom on the surface of the substrate. The concentration of the oxygen-containing compound in the passivation gas is from 0.001 mole ppm to less than 75 mole ppm.

ПОРШНЕВОЙ ПАЛЕЦ И СПОСОБ НАНЕСЕНИЯ ПРОТИВОЗАДИРНОГО ПОКРЫТИЯ НА ЭТОТ ПАЛЕЦ

Изобретение может быть использовано в двигателях внутреннего сгорания для соединения поршня с шатуном. Поршневой палец (1) содержит противозадирное покрытие (4), ограниченное угловым сектором (S), соответствующим по меньшей мере области трения, подвергаемой действию контактного давления вдоль предпочтительного направления. Угловой сектор (S) находится в диапазоне от 15 до 240°. Раскрыты поршневой палец в случае конструктивного элемента двигателя внутреннего сгорания и варианты способа нанесения противозадирного покрытия на поршневой палец. Технический результат заключается в уменьшении трения в контакте палец/корпус. 4 н. и 10 з.п. ф-лы, 19 ил.

СПОСОБ МЕТАЛЛИРОВАНИЯ КРУПНОГАБАРИТНЫХ ЗАГОТОВОК В РЕАКТОРЕ УСТАНОВКИ ДЛЯ ОБЪЕМНОГО МЕТАЛЛИРОВАНИЯ, КОНСТРУКЦИЯ РЕАКТОРА И СПОСОБ ЕГО ИЗГОТОВЛЕНИЯ

Изобретение относится к способу и реактору для металлирования крупногабаритных заготовок в высокотемпературном реакторе установки для объемного металлирования паро-жидкофазным, альтернативным жидкофазным и комбинированным методами. Способ включает вакуумирование реактора в холодном состоянии и при нагреве в ходе проведения процесса металлирования. Причем в ходе проведения процесса металлирования осуществляют раздельное вакуумирование теплоизоляционного материала, размещенного в герметичных камерах, образованных герметичными элементами футеровки крышки, корпуса и днища реактора и самими элементами реактора, и рабочего реакторного пространства, а после завершения процесса металлирования вплоть до очередного его проведения производят консервацию теплоизоляционного материала путем создания в герметичных камерах атмосферы инертного газа с избыточным давлением 0,025-0,03 атм, путем подачи инертного газа в герметичные камеры одновременно с подачей воздуха в рабочий объем реактора и поддержания ...

МАТЕРИАЛ ДЛЯ КОНВЕРСИИ ВАКУУМНОГО УЛЬТРАФИОЛЕТОВОГО ИЗЛУЧЕНИЯ В ИЗЛУЧЕНИЕ ВИДИМОГО ДИАПАЗОНА В ВИДЕ АМОРФНОЙ ПЛЕНКИ ОКСИДА КРЕМНИЯ SiOSx НА КРЕМНИЕВОЙ ПОДЛОЖКЕ

Материал для конверсии вакуумного ультрафиолетового излучения в излучение видимого диапазона в виде аморфной пленки оксида кремния SiOSx на кремниевой подложке, отличающийся тем, что толщина аморфной пленки оксида кремния SiOсоставляет 20÷70 нм, а ионы серы содержатся в количестве, при котором стехиометрический коэффициент «x» находится в пределах от 0,01 до 0,45.

УСТРОЙСТВО ДЛЯ ФОРМИРОВАНИЯ МНОГОКОМПОНЕНТНЫХ И МНОГОСЛОЙНЫХ ПОКРЫТИЙ

СПОСОБ ФОРМИРОВАНИЯ ПОРИСТОГО ПОКРЫТИЯ ИЗ НАНОЧАСТИЦ

Способ относится к области нанотехнологии и может быть использован при изготовлении изделий, содержащих теплообменные поверхности с микро- и нанорельефом с целью интенсификации теплообмена, уменьшения гидравлического сопротивления и улучшения капиллярных свойств поверхности. Способ формирования на плоской поверхности покрытия из наночастиц оксида алюминия включает нанесение на поверхность раствора из наночастиц. Готовят коллоидный раствор наночастиц в воде, его нанесение осуществляют распылением на плоскую поверхность с временными промежутками в 10 сек, при этом поверхность нагревают до температуры в 250°С и осуществляют испарение капель воды при атмосферном давлении на воздухе. Техническим результатом изобретения является получение на поверхности изделия слоя с высокими капиллярными свойствами и уменьшение количества операций. 2 ил., 1 пр.

УСТРОЙСТВО ДЛЯ ЛИЧНОЙ ГИГИЕНЫ, ИМЕЮЩЕЕ СКОЛЬЗЯЩУЮ ПОВЕРХНОСТЬ

ЭЛЕКТРОПРОВОДЯЩИЙ МАТЕРИАЛ ДЛЯ НАНЕСЕНИЯ ПОД НЕПРОВОДЯЩИМ ГИДРОИЗОЛЯЦИОННЫМ СЛОЕМ

ДЕТАЛЬ ГАЗОВОЙ ТУРБИНЫ, СНАБЖЕННАЯ ЗАЩИТНЫМ ПОКРЫТИЕМ, И СПОСОБ НАНЕСЕНИЯ ЗАЩИТНОГО ПОКРЫТИЯ

... 1. Деталь газовой турбины, содержащая металлическую подложку из суперсплава, связующий нижний слой, сформированный на подложке и содержащий интерметаллический материал, содержащий алюминий, никель и платину, и внешнее керамическое покрытие, прикрепленное пленкой окиси алюминия, образованной на связующем нижнем слое, отличающаяся тем, что связующий нижний слой, в основном, содержит трехкомпонентную систему Ni-Pt-AI, состоящую из структуры типа α-NiPt с добавками алюминия. 2. Деталь газовой турбины по п.1, отличающаяся тем, что трехкомпонентная система Ni-Pt-AI имеет состав NizPtyAlx, где z, у, х подобраны таким образом, что 0,05 Подробнее

Verfahren zur Herstellung einer photoelektrisch wirksamen Verbindung

Verfahren zum Herstellen von Legierungskontakten an Halbleitern

Gleitkörper

Hierin ist ein Gleitkörper, der eine Legierungsdeckschicht hat, die in Gleitkontakt mit einem Gegenstückteil davon kommt und einen verbesserten Ermüdungswiderstand hat, offenbart. Der Gleitkörper enthält eine Basismaterialschicht und eine Legierungsdeckschicht, die auf der Basismaterialschicht gebildet ist, in welcher die Legierungsdeckschicht eine Weichmetallphase hat, die aus Zinn gemacht ist, und die in einer metallischen Phase, die aus Aluminium gemacht ist, verteilt ist, und, wenn ein durchschnittliches Streckungsverhältnis der Weichmetallphase als A definiert ist seine Standardabweichung als Aσ definiert ist, A + Aσ 3,0 oder weniger ist. In diesem Fall hat die Weichmetallphase eine Form nahe an einer Kugel, ohne sich in eine bestimmte Richtung zu verlängern.

Verfahren zur Herstellung von hexagonalem Selen mit hohem Dunkelwiderstand

Organic thin film manufacturing method and manufacturing apparatus

A VACUUM DEPOSITION APPARATUS

... 1,214,767. Vapour deposition apparatus. TOKYO SHIBAURA ELECTRIC CO. Ltd. Sept.12, 1969 [Sept.13, 1968], No.45223/69. Heading C7F. Substrates 19 of e.g. glass are coated with e.g. Ni-Fe alloy, Cu or Al from a source 14 wound around or in a modification Fig.2c (not shown) plated on a vertical resistance heater 15, whilst applying a magnetic field by a coil 24. A heater 20 heats the substrates and a shutter 23 protects the substrates at the start of the process. A wire of e.g. Mo, W or Ta may be wrapped around the source material Figs.2D to 2G (not shown) to prevent it from running down the heater 15. Several layers may be deposited by using several sources which may be moved into position, when required. More material may be placed at some parts of the heater than others.

CADMIUM SULPHIDE THIN FILM SUSTAINED CONDUCTIVITY DEVICE AND METHOD FOR MAKING SAME

... 1338337 Semi-conductor devices HUGHES AIRCRAFT CO 4 Feb 1972 [4 May 1971] 5314/72 Heading H1K A field sustained conductivity device (i.e. a device which responds to incident radiation by producing a change in its conductivity which is sustained when the radiation ceases so long as an impressed electric field is maintained) comprises a first electrode, a layer of CdS deposited in vacuo under conditions in which the walls of the chamber are cooler than the first electrode and then subjected to a heat treatment in a non-sulphur-containing atmosphere, and a second electrode in the form of a composite film of two materials having diverse conducting properties adjacent to the layer of CdS. A continuous metal film may be applied on top of the composite film. As shown, Fig. 1, a glass substrate 8 is provided with a transparent electrode 2 of SnO 2 : Sb and a layer 6 of CdS is vacuum deposited. The CdS is heat treated in a non- sulphur-containing atmosphere, e.g. Ar, N, or air, a discontinuous conductive ...

Method and apparatus for sputter deposition

A reactive ion source of a sputter deposition system 100 comprises an electrically powered antenna 116, wherein the antenna 116 has a substantially elongate shape. A housing 118 is provided which at least partially surrounds the antenna 116, an inlet 126 for supplying a reactive gas into the housing, and an outlet 128 from the housing configured such that reactive ions can pass through it. The antenna 116 is configured to apply an electromagnetic field to the reactive gas such that a plasma B is formed that comprises reactive ions. Magnetic assembly 108 is also provided to accelerate and focus the ions of the plasma such that the plasma and reactive ins maintain their directionality and geometry.

PVD COATED CUTTING TOOL

PROCEDURE FOR THE PRODUCTION OF A SAW BAND

PROCEDURE FOR THE PRODUCTION OF PARTICLES OXYGEN-INTERCEPTING FROM THE GASEOUS PHASE SEPARATION

SERS substrate

Die Erfindung betrifft ein Verfahren zur Herstellung von edelmetallmodifizierten Silicium- Nanowires, umfassend einen Schritt des Erzeugens der Silicium-Nanowires in einem Siliciumwafer sowie einen Schritt des Aufbringens eines oder mehrerer Edelmetalle auf die Oberfläche der Nanowires, dadurch gekennzeichnet, dass mit Gold beschichtete Silicium-Nanowires hergestellt werden, indem a) zunächst die Silicium-Nanowires im Siliciumwafer durch silberkatalysiertes chemisches Nassätzen unter Variation der Konzentration und/oder der Einwirkdauer einer Ätzlösung erzeugt werden, um die Länge der Nanowires zu steuern; und b) anschließend die erhaltenen Nanowires mit Gold als Edelmetall durch Sputtern beschichtet werden, wobei die Dauer der Sputterbeschichtung variiert wird, um die Dicke der erhaltenen Goldbeschichtung zu steuern.

GAS DIFFUSION ELECTRODES, DIAPHRAGM ELECTRODE BUILDING GROUPS AND MANUFACTURING PROCESSES FOR IT

Rohr mit Innenbeschichtung

Die Erfindung betrifft einen rohrförmigen Hohlkörper, der in Umfangrichtung in mindestens zwei Segmente unterteilt ist, wobei ein Segment aus einem Trägerkörper mit einer an der dem Innenraum des Hohlkörpers zugewandten Seite aufgebrachten Spritzschicht gebildet ist. Die Trägerkörper sind in Umfangrichtung stoff-, form- und/oder kraftschlüssig zueinander fixiert und verbunden und die Spritzschicht erstreckt sich über die gesamte Innenoberfläche des Hohlkörpers.

FORMATION OF TITANIUM NITRIDE OR ZIRCONIUM NITRIDE COATINGS

AMORPHOUS SEMICONDUCTORS EQUIVALENT TO CRYSTALLINE SEMICONDUCTORS

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, or subsequently, introducing one and preferably at least two or three compensating agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials.

SPUTTERING TARGET FOR PRODUCING ELECTROCONDUCTIVE TRANSPARENT FILMS AND PROCESS FOR MANUFACTURE THEREOF

A sputtering target for producing electroconductive transparent films, which comprises indium oxide and tin oxide and having such a shape that not less than 80% by weight of the target is present in an erosion area on sputtering, and the process for manufacturing the sputtering target which comprises molding a slurry or a powder mixture containing indium oxide and tin oxide into a molded shape and sintering the molded shape.

METHOD OF MANUFACTURING CARDS THAT INCLUDE AT LEAST ONE ELECTRONIC UNIT

The invention relates to a method for manufacturing boards that comprises depositing a liquid resin (22) on and/or under a plurality of electronic units for forming a plate defining a plurality of boards or board bodies. In order to do so, and in order to reduce as much as possible the residual air bubbles in the manufactured plate, the method comprises depositing the resin in the form of resin beads (26) initially having between them grooves (28) defining air discharge channels. The resin in uniformly spread using a pressing roller for one end of the plate to a second opposite end of said plate.

COATED METALLIC PRODUCTS AND METHODS FOR MAKING THE SAME

The present invention relates generally to methods for producing metallic products comprising a substrate and a metallic, external coating. In preferred embodiments, the metallic products are jewelry articles.

METAL-ORGANIC MACROMOLECULAR SYNTHETIC RESIN COMPOSITE AND PROCESS FOR PRODUCING THE SAME

A composite of metal and an organic film having a high adhesiveness without deterioration of film quality is provided by exposing the surface of organic film to at least one of chemically reactive gas phase molecules and gas phase ions thereby forming functional groups on the surface of organic film, and forming a metallic film thereon through the functional groups.

WORKPIECE COATED WITH A SOLID SOLUTION LAYER, METHOD FOR ITS PRODUCTION, USE OF THE WORKPIECE, AND APPARATUS FOR CARRYING OUT THE METHOD

A solid solution layer (C, D) of metalloids is applied on a workpiece by a reactive physical coating technique and has an inclusion ratio of the metalloids which varies continuously over the thickness of the layer. The solid solution layer (C, D) lies on a separating layer (B) on the workpiece. To produce the mixed layer (C, D) titanium is vaporized in a vacuum chamber in a crucible which is moved back and forth in front of the workpiece surfaces to be coated and two gases are introduced which have different affinity to the vaporized titanium. For the creation of a first partial layer (C) of the solid solution layer (C, D) the inclusion ratio of the gases is varied steadily. During the coating operation the workpieces rotate, so that sometimes their surface is turned toward the crucible and sometimes away from it. The coated workpieces are distinguished by a high resistance to flank wear and cratering (Fig. 3).

METHOD FOR PRODUCING A COATING CONTAINING TITANIUM BORIDE

The invention relates to a process for producing a coating having a titani um boride content of at least 80% by weight, in which a coating having a thickness of from 0.1 mm to 1 mm, a porosity of not more than 10% by volume and an oxygen content of less than 1% by weight is applied to the surface of a substrate by plasma spraying in an atmosphere which is virtually or completely free of oxygen, with no metallic powder being added to the spraying powder.

ДЕТАЛЬ ГАЗОВОЇ ТУРБІНИ, ОСНАЩЕНА ЗАХИСНИМ ПОКРИТТЯМ, І СПОСІБ ФОРМУВАННЯ ЗАХИСНОГО ПОКРИТТЯ НА МЕТАЛЕВІЙ ОСНОВІ З СУПЕРСПЛАВУ

Деталь газової турбіни містить металеву основу із суперсплаву, сполучний нижній шар, сформований на основі, який містить інтерметалевий матеріал – алюміній, нікель і платину та зовнішнє керамічне покриття, прикріплене плівкою оксиду алюмінію, утвореною на сполучному нижньому шарі, причому сполучний нижній шар містить, в основному, трикомпонентну систему Ni-Pt-Al, що складається зі структури типу A – NiPt з добавками алюмінію.

Process of formation of the junctions p-n, between semiconductors, using vacuum vaporization

A method for applying by vaporization of the layers to several components to a substrate and objects thus obtained

AMORPHOUS SEMICONDUCTORS BEING EQUIVALENT HAS CRYSTALLINE SEMICONDUCTORS

Of photoelectric bodies and application manufactoring process of these bodies for the realization of detectors

SEMI-CONDUCTEURS AMORPHES EQUIVALANT A DES SEMI-CONDUCTEURS CRISTALLINS

Eléments semi-conducteurs. On forme un film semi-conducteur amorphe, de préférence en vaporisant du silicium ou analogue dans une enceinte sous vide et en condensant celui-ci sur un substrat dans ladite enceinte, puis, de préférence en même temps, on introduit au moins un agent compensateur dans le film, et de préférence au moins deux ou trois de ces agents, tels que de l'hydrogène et du fluor activés, dans des quantités qui réduisent sensiblement ou éliminent les états localisés de la bande interdite du film de manière à pouvoir ajouter des dopants et produire des films semi-conducteurs amorphes de type p ou n. Fabrication d'un film semi-conducteur amorphe pourvu de propriétés semi-conductrices.

Integrated anode and activated reactive gas source for use in a magnetron sputtering device

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings.

Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture

Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride.

Device housing and method for making the same

A device housing is provided. The device housing includes a substrate, and an anti-fingerprint film formed on the substrate. The anti-fingerprint film is a metal-nitrogen-oxygen compound coating. A method for making the device housing is also described there.

Film forming apparatus and film forming method

The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.

Reactive sputtering with multiple sputter sources

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Article and method for manufacturing same

An article includes a substrate and a color layer deposited on the substrate. The color layer has an L* value between about 36 to about 48, an a* value between about 4 to about 5, and a b* value between about 2 to about 4 in the CIE L*a*b* color space.

Article and method for manufacturing same

An article includes a substrate; and a color layer deposited on the substrate, wherein the color layer is a zirconium carbon-nitride layer; the color layer has an L* value between about 28 to about 32, an a* value between about −1 to about 1, and a b* value between about −1 to about 1 in the CIE L*a*b* color space.

Method for manufacturing a perpendicular magnetic data recording media having a pseudo onset layer

A method for manufacturing a magnetic media for perpendicular magnetic data recording. The method includes depositing a Ru layer in a pure oxygen atmosphere and then further depositing Ru in the presence of oxygen to form a thin pseudo onset layer. The pseudo onset layer can advantageously be depositing in the same deposition chamber and using the same target as that used to deposit the underlying Ru layer. This saves a great deal of manufacturing cost and complexity. The presence of the pseudo onset layer reduces grains size and increases grain separation in a high Ku magnetic layer deposited thereon, thereby increasing signal to noise ratio and decreasing magnetic core width (MCW).

Liquid infusion device and method

A device for infusing liquid into material samples includes a container assembly configured to contain multiple material samples submerged in liquid. The material samples have pores containing air or gas. A pressure source and a vacuum source are both operatively connectable to the container assembly and alternately communicable with the container assembly to force the liquid to at least substantially fill the pores. The samples are thus ready for further processing, testing or use. A method of filling pores in material samples with liquid includes supporting multiple material samples within liquid in an airtight container assembly. The method further includes alternately applying a vacuum source and a pressure source to the container assembly, thereby replacing air with liquid in the pores of the material samples.

Sputtering target material, silicon-containing film forming method, and photomask blank

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

Method of fabricating a component using a two-layer structural coating

A method of fabricating a component is provided. The fabrication method includes depositing a first layer of a structural coating on an outer surface of a substrate. The substrate has at least one hollow interior space. The fabrication method further includes machining the substrate through the first layer of the structural coating, to define one or more openings in the first layer of the structural coating and to form respective one or more grooves in the outer surface of the substrate. Each groove has a respective base and extends at least partially along the surface of the substrate. The fabrication method further includes depositing a second layer of the structural coating over the first layer of the structural coating and over the groove(s), such that the groove(s) and the second layer of the structural coating together define one or more channels for cooling the component. A component is also disclosed.

Coated article and method for making same

A coated article is described. The coated article includes a stainless steel substrate, a bonding layer formed on the substrate, and a hard layer formed on the bonding layer. The bonding layer is a nickel-chromium alloy layer. The hard layer is a nickel-chromium-boron-nitrogen layer. The mass percentage of nitrogen within the hard layer is gradually increased from the area near the bonding layer to the area away from the bonding layer. A method for making the coated article is also described.

Coated article and method for making the same

A coated article is described. The coated article includes a substrate, a magnesium oxide-alumina compound layer formed on the substrate, and an anti-fingerprint layer formed on the magnesium oxide-alumina compound layer. The anti-fingerprint layer is a layer of magnesium-aluminum-oxygen-fluorine having the chemical formula of MgAlO x F y , wherein 0<x<2.5, 0<y<5. A method for making the coated article is also described.

Scale-shaped filmy fines dispersion

Provided is a scale-shaped filmy fines dispersion. More specifically, scale-shaped filmy fines are subjected to a treatment for keeping the scale-shaped filmy fines from easily settling out. In the case of a metallic pigment using the scale-shaped filmy fines, the scale-shaped filmy fines are dispersed in the ink. As a result, nozzle clogging can be prevented, and the obtained print can achieve abundant metallic luster. The scale-shaped filmy fines dispersion contains, in a solvent, scale-shaped filmy fines obtained by finely grinding a simple metal, an alloy, or a metal compound. The scale-shaped filmy fines have a mean length of 0.5 μm or more and 5.0 μm or less, a maximum length of 10 μm or less, a mean thickness of 5 nm or more and 100 nm or less, and an aspect ratio of 20 or more.

Coated article and method for making the same

A coated article includes a substrate and a color layer formed on the substrate. The substrate is made of aluminum or aluminum alloy. The color layer includes an aluminum layer formed on the substrate and an aluminum oxide layer formed on the aluminum layer. In the CIE LAB color system, L* coordinate of the color layer is between 75 and 100, a* coordinate of the color layer is between −1 and 1, b* coordinate of the color layer is between −1 and 1. The coated article has a white color.

Method for determining process-specific data of a vacuum deposition process

A method for determining process-specific data of a vacuum deposition process, in which a substrate is coated in a vacuum chamber by a material detached from a target connected to a magnetron, an optical emission spectrum being recorded and process-significant data of the vacuum deposition process being determined therefrom for further processing in measurement or regulating processes, is optimized to minimize errors in the determination of process-significant data. At least three intensities of spectral lines of at least two process materials are determined from the optical emission spectrum. From these, single and multiple intensities are mathematically correlated with and to one another and a process-significant datum, which is used in subsequent measurement or regulating processes, is determined from the relation results by a further mathematical relation.

Method of coating metal shell with pure white film

A method of coating a pure white film includes a first step of providing a metal shell, a second step of forming a bonding layer on a surface of the metal shell by a first magnetron sputtering process, and a third step of forming a pure white layer on a surface of the bonding layer by a second magnetron sputtering process. The bonding layer includes chromium nitride. In the second process, aluminum and chromium corporately serves as targets. Oxygen serves as a reactive gas. A ratio of a bombarding power of the aluminum to that of the chromium is about 12:1. A bias voltage ranges from 180 volts to 220 volts. The second magnetron sputtering process lasts for about 58 to 62 minutes and goes on under a temperature ranged from 180° C. to 220° C. And the pure white layer includes aluminum oxide and chromium oxide.

Method for producing indium tin oxide layer with controlled surface resistance

The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity.

Method for producing polarizing element

A method for producing a polarizing element includes the steps of: forming an island-shaped film of a metal halide on a glass substrate; forming needle-shaped particles of the metal halide by stretching the glass substrate through heating to elongate the island-shaped film; and forming needle-shaped metal particles composed of a metal by reducing the metal halide of the needle-shaped particles, wherein the metal halide is deposited on the glass substrate by a reactive physical vapor deposition method.

Coated article and method of making the same

A coated article includes a bonding layer, an iridium layer, a chromium oxynitride layer and a chromium nitride layer formed on a substrate in that order. The substrate is made of die steel.

Method for manufacturing magnetic recording medium, and magnetic recording/reproducing apparatus

A method for manufacturing a magnetic recording medium including at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate. The perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer. The orientation control layer, formed of a Co—Cr alloy, is formed by the reactive sputtering using a mixture of a sputtering gas and nitrogen.

Closed loop sputtering controlled to enhance electrical characteristics in deposited layer

This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of an electrical property as a function of cathode voltage used during a sputtering process. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials, be fabricated to have minimal leakage or “off” current characteristics (I leak or I off , respectively) or a maximum ratio of “on” current to “off” current (I on /I off ).

Process for surface treating iron-based alloy and article

A process for surface treating iron-based alloy includes providing a substrate made of iron-based alloy. A chromium-oxygen-nitrogen layer is then formed on the substrate by sputtering. An iridium layer is formed on the chromium-oxygen-nitrogen layer by sputtering. A boron-nitrogen layer is next formed on the iridium layer by sputtering.

Pinhole-Free Dielectric Thin Film Fabrication

A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

Transparent conductive zinc oxide film, process for production thereof, and use thereof

A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 μm. 0.001≦Ti/(Zn+Al+Ti)≦0.079.  (1) 0.001≦Al/(Zn+Al+Ti)≦0.079  (2) 0.010≦(Ti+Al)/(Zn+Al+Ti)≦0.080  (3)

Method for deposition

Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Device housing and method for making same

The device housing includes a substrate having a bonding layer, a hard layer, and a color layer formed thereon, and in that order. The bonding layer is made of metal. The hard layer substantially consists of elemental Cr and elemental C. The color layer substantially consists of elemental Cr, elemental O, and elemental N. The atomic ratio of the elemental Cr, elemental O, and elemental N within the color layer is about (0.8-1.0):(1.2-1.5):(0.3-0.5). The color layer provides a bright blue color for the device housing. A method for making the device housing is also described.

Water-reactive al-based composite material, water-reactive al-based thermally sprayed film, process for production of such al-based thermally sprayed film, and constituent member for film-forming chamber

Herein provided are a water-reactive Al-based composite material which is characterized in that it is produced by incorporating, into Al, 2.0 to 3.5% by mass of In, 0.2 to 0.5% by mass of Si and 0.13 to 0.25% by mass of Ti, and which can be dissolved in water through the reaction thereof in a water-containing atmosphere; a water-reactive Al-based thermally sprayed film produced using this composite material; a method for the production of this Al-based thermally sprayed film; and a constituent member for a film-forming chamber which is provided with this Al-based thermally sprayed film on the surface thereof.

Multilayer transparent electroconductive film and method for manufacturing same, as well as thin-film solar cell and method for manufacturing same

A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −2.18×[Al]+1.74≦[Ga]≦−1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −[Al]+0.30≦[Ga]≦−2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga).

Modified surface for an implantable device and a method of producing the same

Implantable devices, such as stents, having a surface modified with TiN x C y are disclosed.

Method for producing solid electrolyte membrane

An object of the present invention is to provide a solid electrolyte membrane which comprises Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17) and has excellent ion conductivity. Disclosed is a method for producing a solid electrolyte membrane which comprises a solid electrolyte described by the composition formula Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17), the method comprising the steps of: producing a gas phase material comprising lithium, lanthanum and titanium by converting into a gas phase at least one selected from the group consisting of a lithium metal, a lanthanum metal, a titanium metal, a lithium-lanthanum alloy, a lithium-titanium alloy, a lanthanum-titanium alloy and a lithium-lanthanum-titanium alloy, and depositing an Li 3x La 2/3-x TiO 3 (0.05≦x≦0.17) thin film on a substrate by a gas phase method for reacting the gas phase material with oxygen in a single element state.

COATED CUTTING TOOL

The present invention relates to a coated cutting tool comprising a PVD coating and a cemented carbide substrate comprising Co in an amount of 12.5-17 wt %, Cr in an amount such that the Cr/Co weight ratio is 0.05-0.15, a Ti of between 50 to 300 ppm by weight and a CW Cr value between 0.8-0.97. 1. A cutting tool comprising:a substrate; anda PVD coating, wherein the substrate comprises WC, Co in an amount of between 12.5-17 wt %, Cr in an amount such that the Cr/Co weight ratio is 0.05-0.15, and a Ti content of between 50 to 300 ppm by weight.2. A cutting tool according to claim 1 , wherein the cemented carbide substrate has a CW-Cr ration of between 0.80-0.97 and a coercivity of between 13 and 20 kA/m.3. A cutting tool according to claim 1 , wherein the Co content is 13-16 wt % claim 1 , the Cr content such that the Cr/Co weight ratio is 0.08-0.12 claim 1 , and a the Ti content of between 50 to 250 ppm.4. A cutting tool according to claim 1 , wherein the PVD coating is a homogenous PVD coating.5. A cutting tool according to claim 1 , wherein the PVD coating is a homogenous nitride coating of one or more of the elements from the group of IVb claim 1 , Vb claim 1 , VIb claim 1 , Al claim 1 , Y and Si.6. A cutting tool according to claim 1 , wherein the PVD coating is a homogenous nitride coating of the elements Ti and Al.7. A cutting tool according to claim 1 , wherein the PVD coating comprises an aperiodic multilayered structure of alternating sublayers A/B/A/B/A/B claim 1 , wherein the alternating sublayers A and B are repeated throughout the entire coating and wherein the composition of A and B are different from each other and wherein the sublayers A and B are nitrides of one or more elements from the group of IVb claim 1 , Vb claim 1 , VIb claim 1 , Al claim 1 , Y and Si.8. A cutting tool according to claim 7 , wherein the PVD coating comprises a multilayered structure of alternating sublayers A and B of Ti and/or Al. The present invention relates to a coated ...

Vehicle piston ring having multi-layer coating

Disclosed is a piston ring having a multi-layer coating. The piston ring includes a buffer layer, a intermediate layer, a TiAlN/CrN nano multilayer, and a TiAlCN layer. The buffer layer is coated over a base material of a piston ring. The intermediate layer is coated over the buffer layer. The TiAlN/CrN nano multilayer is coated over the intermediate layer. The TiAlCN layer is coated over the TiAlN/CrN nano multilayer as an outermost surface layer.

Plasma Spray Method

The invention relates to a plasma spray method which can serve as a starting point for a manufacture of metal nanopowder, nitride nanopowder or carbide nanopowder or metal films, nitride films or carbide films. To achieve an inexpensive manufacture of the nanopowder or of the film, in the plasma spray in accordance with the invention a starting material (P) which contains a metal or silicon oxide is introduced into a plasma jet ( 113 ) at a process pressure of at most 1000 Pa, in particular at most 400 Pa. The starting material (P) contains a metal or silicon oxide which vaporizes in the plasma jet ( 113 ) and is reduced in so doing. After the reduction, the metal or silicon which formed the metal or silicon oxide in the starting material is thus present in pure form or in almost pure form. The metal or silicon can be deposited in the form of nanopowder or of a film ( 124 ). Nitride nanoparticles or films or carbide nanoparticles or films can be generated inexpensively by addition of a reactant (R) containing nitrogen or carbon.

Multi-step process for fully coloured construction elements

A multiple step coating process is disclosed. The multiple step coating process is for coating a substrate construction element having side portions whereby at least three sides portions are coated. The process includes the steps of (A) advancing the element past a first coating station on its transport side for applying a surface layer onto one or more of the non transport side portions of the element and (B) subsequently advancing the element into further coating stations for applying a surface layer to the transport side of (A) and/or one or more of the remaining sides of the element.

METHODS OF MAKING DEVICES

The method of making devices is disclosed herein. More particularly, a method of manufacturing a device, comprises: vacuum depositing a device-forming metal onto an unpatterned, exterior surface of a generally cylindrical substrate to form a generally tubular, unpatterned crystalline metal film under at least one vacuum deposition process condition selected from at least one of chamber pressure, deposition pressure, and partial pressure of a process gas, said at least one process condition optimized to substantially eliminate formation of chemical and intra- and intergranular precipitates in the bulk material; and removing the deposited generally tubular, unpatterned crystalline metal film from the generally cylindrical substrate. 1. A method of manufacturing a device , comprising:a. vacuum depositing a device-forming metal onto an unpatterned, exterior surface of a generally cylindrical substrate to form a generally tubular, unpatterned crystalline metal film under at least one vacuum deposition process condition selected from at least one of chamber pressure, deposition pressure, and partial pressure of a process gas, said at least one process condition optimized to substantially eliminate formation of chemical and intra- and intergranular precipitates in the bulk material; andb. removing the deposited generally tubular, unpatterned crystalline metal film from the generally cylindrical substrate.2. The method according to claim 1 , further comprising a step of depositing a sacrificial material layer onto the substrate prior to step (a) and removing the sacrificial material layer in order to remove the deposited generally tubular claim 1 , unpatterned crystalline metal film from the substrate in step (b) claim 1 , and wherein the process condition controlled is a deposition rate and the deposition rate is no less than about 20 nm/sec.3. The method according to claim 1 , wherein step (a) is conducted by ion beam-assisted evaporative deposition.4. The method ...

Reactive sputter deposition of dielectric films

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

Modified Surface For An Implantable Device And A Method Of Producing The Same

Implantable devices, such as stents, having a surface modified with TiN x O y or TiN x C y are disclosed.

Method for depositing a transparent barrier layer system

The invention relates to a method for producing a transparent bather layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas and a gaseous or vaporous organic component are introduced into the vacuum chamber.

Thin-film transistor and zinc oxide-based sputtering target for the same

A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

DEVICE FOR PRODUCING STOICHIOMETRY GRADIENTS AND LAYER SYSTEMS

A process and a device for coating substrates with a stoichiometric gradient in an in-line coating system include at least two evaporation devices, each with an evaporator tube. The evaporator tubes are implemented so as to be tiltable independently of one another, whereby the transition area of the two vapor lobes can be adapted to the requirements of the gradient profile. Furthermore, the spacing of the evaporator tubes from the substrate and each other can be set. 110-. (canceled)11. Device for coating a substrate in an in-line vacuum coating system comprising: at least two evaporation devices for heating and evaporating materials to be deposited and producing a mixed single layer of evaporated material from the at least two evaporation deviced on a substrate , each device comprising a respective evaporator tube having an opening for introducing evaporated material into the vacuum coating system , means for adjusting spacing of at least one respective evaporator tube from the substrate and means for setting an angle of vapor entry direction of at least one respective evaporator tube in relation to the substrate independently of an angle of vapor entry direction of another respective evaporator tube.12. Device according to claim 11 , wherein the angle of vapor entry direction in relation to the substrate is implemented so that it can be set within a range of +90° Подробнее

PLASMA CVD APPARATUS, PLASMA CVD METHOD, REACTIVE SPUTTERING APPARATUS, AND REACTIVE SPUTTERING METHOD

A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate. 1. A plasma CVD apparatus comprising a vacuum chamber , and a main roll and a plasma generation electrode in the vacuum chamber , wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll , whereinat least one side wall extending in transverse (width) direction of the long substrate is provided on each of the upstream and downstream sides in the machine (conveying) direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode,the side walls are electrically insulated from the plasma generation electrode, andthe side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with a gas supply hole.2. A plasma CVD apparatus according to wherein the gas supply hole is in the form of at least one row of gas supply holes aligned in the transverse direction of the long substrate.3. A plasma CVD apparatus according to wherein the side wall on either the upstream or the downstream side in the machine direction of the long ...

Multifunctional Electrode

A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Method for producing a thin film made of lead zirconate titanate

The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value ( 19 ) in a diffraction angle range from 33 to 35.5°; and completing the thin film.

Evaporating device and vaccum evaporation device using the same

An evaporating device comprises a gas guiding element, an evaporating boat received in the gas guiding element to define a receiving space between the evaporation tray and the gas guiding element, and a gas channel. The evaporation tray comprises a bottom wall and two opposing first sidewalls and two opposing second sidewalls extending from the periphery of the first bottom wall. At least one of the first sidewalls and/or at least one of the second sidewalls defines a number of gas holes. The gas holes communicate with the receiving space. One end of the gas channel connects the gas guiding element and communicates with the receiving space to feed gas into the receiving space. A vacuum evaporation device using the evaporating device is also provided.

Low emissivity coating stack and double glazing glass

To provide a low emissivity coating stack having a low emissivity for heat rays and having high visible light transmittance and near infrared transmittance. A low emissivity coating stack 1 comprising a transparent substrate 2 , and a thin film laminate portion 3 having at least a first titanium oxide-containing layer 31 containing an oxide of titanium, a low emissivity metal layer 33 containing silver as the main component and a second titanium oxide-containing layer 34 containing an oxide of titanium formed in this order on the transparent substrate 2 , which has a surface resistivity of at most 3.3Ω/□ and has a solar heat gain coefficient of at least 0.60 when formed into double glazing glass.

Apparatus for manufacturing an adhesive-free gas barrier film having a ceramic barrier layer

The present invention relates to an apparatus for manufacturing an adhesive-free gas barrier film comprising conveying means for conveying a film web; at least one first lock system for introducing the film web into a coating chamber of the apparatus; at least one first coating means by means of which the film web can be at least partially coated by depositing a barrier material in the coating chamber; and optionally at least one second lock system for expelling the film web out of the coating chamber; and at least one second coating means by means of which the coated film web can be at least partially coated by extrusion of a plastic melt.

TEMPERABLE AND NON-TEMPERABLE TRANSPARENT NANOCOMPOSITE LAYERS

The invention concerns a transparent substrate carrying a layer of a transparent dielectric nanocomposite, comprising a matrix of SiNO, y being in the range 0 to 4/3, z being in the range 0 to 2 and y and z not being equal to 0 simultaneously, said matrix including nanoparticles selected from the group consisting of aluminum nitrides, zirconium nitrides, titanium nitrides, aluminum oxides, zirconium oxides, zinc oxides, titanium oxides, tin oxides, tantalum oxides and mixtures thereof. 1. A transparent substrate carrying a layer of a transparent dielectric nanocomposite , comprising a matrix of SiNO , y being in the range 0 to 4/3 , z being in the range 0 to 2 and y and z not being equal to 0 simultaneously , said matrix including nanoparticles selected from the group consisting of aluminum nitrides , zirconium nitrides , titanium nitrides , aluminum oxides , zirconium oxides , zinc oxides , titanium oxides , tin oxides , tantalum oxides and mixtures thereof.2. The transparent substrate according to claim 1 , wherein the matrix is SiO claim 1 , SiNor a mixture thereof.3. The transparent substrate according to or claim 1 , wherein the nanoparticles are selected from the group consisting of ZrO claim 1 , TiO claim 1 , AlN claim 1 , ZrN claim 1 , TiN and mixtures thereof.4. The transparent substrate according to any of to claim 1 , wherein the mean diameter value of nanoparticles is within the range 10 to 150 Å.5. The transparent substrate according to any of to claim 1 , carrying a multi-layered stack claim 1 , the layer of a transparent dielectric nanocomposite being a topcoat of said multi-layered stack.6. The transparent substrate according to claim 5 , wherein the multi-layered stack is a Low-e stack claim 5 , including at least one IR reflective layer and/or at least one absorbing layer.7. The transparent substrate according to any of to claim 5 , wherein the multi-layered stack includes in the following order at least: one dielectric layer claim 5 , one ...

Method for manufacture and coating of nanostructured components

The synthesis of nanostructures uses a catalyst that may be in the form of a thin film layer on a substrate. Precursor compounds are selected for low boiling point or already exist in gaseous form. Nanostructures are capable of synthesis with a masked substrate to form patterned nanostructure growth. The techniques further include forming metal nanoparticles with sizes <10 nm and with a narrow size distribution. Metallic nanoparticles have been shown to possess enhanced catalytic properties. The process may include plasma enhanced chemical vapor deposition to deposit Ni, Pt, and/or Au nanoparticles onto the surfaces of SiO 2 , SiC, and GaN nanowires. A nanostructure sample can be coated with metallic nanoparticles in approximately 5-7 minutes. The size of the nanoparticles can be controlled through appropriate control of temperature and pressure during the process. The coated nanowires have application as gas and aqueous sensors and hydrogen storage.

Recording film for optical information recording medium, optical information recording medium, and sputtering target used to form said recording film

Provided is a recording film for an optical information recording medium with which it is possible to meet all predetermined characteristics requirements and increase productivity while reducing the number of layers in the optical information recording medium. The present invention relates to a recording film for an optical information recording medium on which recording is performed by laser light irradiation, wherein the recording film for an optical information recording medium includes: Mn; at least one element (group X element) selected from the group consisting of Bi, Ag, Co, Cu, In, Sn, and Zn (group X); and oxygen (O). At least some of the Mn and at least some of the group X element are oxidized.

PANE WITH THERMAL RADIATION REFLECTING COATING

The present invention relates to a pane with thermal radiation reflecting coating, comprising at least one substrate () and at least one thermal radiation reflecting coating () at least on the interior-side surface of the substrate (), wherein 1121. Pane with thermal radiation reflecting coating for separating an interior from an external environment , comprising at least one substrate () and at least one thermal radiation reflecting coating () at least on the interior-side surface of the substrate () , whereinthe pane has transmittance in the visible spectral range of less than 5%, and{'b': 2', '1, 'the coating (), proceeding from the substrate (), comprises at least{'b': '3', 'one adhesive layer () that contains at least one material with a refractive index of less than 1.8,'}{'b': '4', 'one functional layer () that contains at least one transparent, electrically conductive oxide,'}{'b': '5', 'one optically high-refractive-index layer () that contains at least one material with a refractive index greater than or equal to 1.8, and'}{'b': '6', 'one optically low-refractive-index layer () that contains at least one material with a refractive index of less than 1.8.'}2189. Pane according to claim 1 , which is a composite pane claim 1 , wherein the substrate () is bonded to a cover pane () via at least one thermoplastic intermediate layer ().3. Pane according to claim 1 , which has transmittance in the visible spectral range of less than 4% claim 1 , preferably less than 3%.43. Pane according to claim 1 , wherein the adhesive layer () contains at least one oxide claim 1 , preferably silicon oxide and/or aluminum oxide claim 1 , particularly preferably aluminum-doped silicon dioxide claim 1 , zirconium-doped silicon dioxide claim 1 , or boron-doped silicon dioxide.53. Pane according to claim 1 , wherein the adhesive layer () has a thickness from 10 nm to 150 nm claim 1 , preferably from 15 nm to 50 nm.64. Pane according to claim 1 , wherein the functional layer () ...

High temperature low friction coating layer and the method of the same

Disclosed are a coating layer having excellent low-friction ability at a high temperature and a method of forming the coating layer. The high-temperature low-fiction coating layer may improve heat resistance, fatigue resistance, low-friction ability, and seizure resistance of the turbine wheel of a turbocharger and the parts sliding at a high temperature in the exhaust system of an engine, improve turbo-lag, and improve durability of the high-temperature parts in the exhaust system of an engine. The high-temperature low-friction coating layer includes: a CrN bonding layer 110 disposed on a nitrified base material 100; a TiAlCrYN nano-multi-support layer 120 disposed on the CrN bonding layer 110 to achieve heat resistance, fatigue resistance, wear resistance, and toughness of the coating layer; and a TiAlCrYCN nano-multi-function layer 130 disposed on the TiAlCrYN nano-multi-support layer 120 to achieve heat resistance, oxidation resistance, seizure resistance, toughness, and low-friction ability of the coating layer.

EXTENSIBLE BARRIER FILMS, ARTICLES EMPLOYING SAME AND METHODS OF MAKING SAME

There is provided a barrier film including a barrier layer having two opposing major surfaces, a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer; a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer; and a substrate in direct contact with the first organic layer or the second organic layer; wherein the barrier layer comprises buckling deformations with average spacing smaller than average spacing of the buckling deformations in the first or second organic layer. 1. A barrier film comprising:(e) a barrier layer having two opposing major surfaces;(f) a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer; and(g) a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer;(h) a substrate in direct contact with the first organic layer or the second organic layer;wherein the barrier layer comprises buckling deformations with average spacing smaller than average spacing of the buckling deformations in the first or second organic layer.2. A barrier film comprising:(e) a barrier layer having two opposing major surfaces, wherein the barrier layer comprises buckling deformations;(f) a first organic layer in direct contact with one of the opposing major surfaces of the barrier layer;(g) a second organic layer in direct contact with the other of the opposing major surfaces of the barrier layer; and(h) a substrate in direct contact with the first organic layer or the second organic layer;wherein each of the first organic layer and the second organic layer has a conformable surface conforming to a shape of the barrier layer; andwherein each of the first organic layer and the second organic layer has a substantially flat surface disposed opposite to and spaced apart from the conformable surface.3. The barrier film of any of to , wherein the substrate is heat-shrinkable.4. The barrier ...

COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF

A coated article is described herein that may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test. 1. A coated article comprising:a substrate having a major surface, the major surface comprising a first portion and a second portion, wherein a first direction that is normal to the first portion of the major surface is not equal to a second direction that is normal to the second portion of the major surface, and the angle between the first direction and the second direction is in a range of from about 10 degrees to about 180 degrees; andan optical coating disposed on at least the first portion and the second portion of the major surface, the optical coating forming an anti-reflective surface, wherein:the coated article exhibits at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater;the coated article exhibits a photopic reflectance as measured at the anti-reflective surface at the first portion of the substrate of about 2% or less, wherein the photopic reflectance of the first portion is measured at a first incident illumination angle relative to the first direction, wherein the first incident illumination angle comprises an angle in the range from about 0 degrees to about 60 degrees from the first direction;the coated article exhibits a photopic reflectance as measured at the ...

Film forming apparatus

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

Apparatus for physical vapor deposition reactive processing of thin film materials

An apparatus has a cathode target with a cathode target outer perimeter. An inner magnetic array with an inner magnetic array inner perimeter is at the cathode target outer perimeter. An outer magnetic array has an outer magnetic array outer perimeter larger than the inner magnetic array inner perimeter. The inner magnetic array and the outer magnetic array are concentric and each have a single, common, parallel magnetic orientation to form a magnetic field environment that defines a plasma confinement zone adjacent the target cathode and the plasma confinement zone causes a gas operative as a reactive gas and sputter gas to become ionized and thus be directed to the target cathode and cause a second set of ions including species from the target to disperse across a substrate.

SiC FILM STRUCTURE

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

Piezoelectric body film, piezoelectric element, and method for manufacturing piezoelectric element

To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A 1+δ [(Zr y Ti 1-y ) 1-x Nb x ]O 2 , Formula (2) 0.35≤r/q<0.58, in this case, in Formula (1), A represents an A site element containing Pb, x and y each independently represent a numerical value of more than 0 and less than 1, standard values of δ and z each are 0 and 3, but these values may deviate from the standard values as long as the perovskite-type oxide has a perovskite structure, and, in Formula (2), a unit of q is atm %.

NEGATIVE ELECTRODE PLATE, PREPARATION METHOD THEREOF AND ELECTROCHEMICAL DEVICE

The invention refers to negative electrode plate, preparation method thereof and electrochemical device. The negative electrode plate comprises: a negative current collector, a negative active material layer, and an inorganic dielectric layer which are provided in a stacked manner; the negative active material layer comprises opposite first surface and second surface, wherein the first surface is disposed away from the negative current collector; the inorganic dielectric layer is disposed on the first surface of the negative active material layer and consists of an inorganic dielectric material. The negative electrode plate provided by the application is useful in an electrochemical device, and can result in an electrochemical device having simultaneously excellent safety performance and cycle performance. 1. A negative electrode plate , comprising:a negative current collector;a negative active material layer, disposed on at least one surface of the negative current collector, said negative active material layer comprises opposite first surface and second surface, wherein said first surface is disposed away from the negative current collector; andan inorganic dielectric layer, disposed on the first surface of the negative active material layer, said inorganic dielectric layer consisting of an inorganic dielectric material; said inorganic dielectric layer comprises a first dielectric layer on an outer surface of the negative active material layer, and the first dielectric layer has a thickness of from 30 nm to 1000 nm;{'sup': 3', '3, 'wherein the negative electrode plate has a compact density of from 1.2 g/cmto 2.0 g/cm, a porosity of from 25% to 45% and a wetting velocity of electrolyte on per 10 cm×10 cm area of 2 μg/s or more.'}2. The negative electrode plate according to claim 1 , wherein the first dielectric layer has a thickness of from 50 nm to 600 nm.3. The negative electrode plate according to claim 1 , wherein the first dielectric layer has a thickness of ...

Hard aluminum oxide coating for various applications

A structure for a hardened optically transmissive material including a hard coating is provided. The structure for the hardened optically transmissive material including the hard coating includes a substrate, and an aluminum oxide film disposed over the substrate, wherein the aluminum oxide film is grown to between 100 nanometers (nm) and 5 microns (um). The aluminum oxide film demonstrates a hardness greater than 10 gigapascals (GPa) as measured by nanoindentation, and the aluminum oxide film exhibits a transparency value such that at least 84 percent of light waves transmit through the aluminum oxide film for light waves within a range of wavelengths.

COATING WITH ENHANCED SLIDING PROPERTIES

The present invention relates to coated sliding parts having coating systems which allow better sliding performance under dry and/or under lubricated conditions. The coating systems according to the present invention being characterized by having an outermost layer which—is a smooth oxide-containing layer in case of sliding applications under lubricated conditions, or—is a self-lubricated layer comprising molybdenum nitride, in case of sliding applications under dry or lubricated conditions, is a selflubricated layer with a structured surface comprising a multitude of essentially circular recesses with diameters of several micrometers or below, the recesses randomly distributed over the surface. 119-. (canceled)20101017. Sliding component () having a sliding surface to be exposed to relative movement with respect to another component under lubricated conditions , wherein the sliding surface of the sliding component () is at least partially coated with a coating system () comprising an outermost layer () , characterized in that ,{'b': 7', '7, 'sub': 1-b-c', 'c', 'b, 'the outermost layer () is an oxide-containing layer having good mechanical stability at high temperatures and at least mostly comprising a metal oxide, the layer () having an element composition defined by the formula MeXOwith b at least twice as large as c and with c>0 or c=0, where'}Me is a metal different from Mo or a combination of different metals doesn't comprising Mo, Me having a concentration in atomic percent of 1-b-c, andis oxygen having a concentration in atomic percent of b, andX is or contains nitrogen and/or carbon, having a concentration in atomic percent of c, and{'b': '7', 'wherein the outermost layer () has a smooth or smoothed surface which exhibits essentially no protrusions but which can exhibit recesses.'}21107. Sliding component () according to claim 20 , characterized in that the surface of the outermost layer () comprises a multitude of essentially circular recesses with ...

Implantable graft and methods of making same

The present invention relates to an implantable endoluminal graft comprised of a microporous thin-film metal covering having a plurality of openings and a structural support element underlying and physically attached to the microporous thin-film metal covering, the microporous thin-film metal covering having shape memory properties.

METALLIC FOAM BODY WITH CONTROLLED GRAIN SIZE ON ITS SURFACE, PROCESS FOR ITS PRODUCTION AND USE THEREOF

The invention relates to a metallic foam body, comprising 1. A metallic foam body , comprising(a) a metallic foam body substrate made of at least one metal or metal alloy A; and(b) a layer of a metal B present on at least a part of the surface of the metallic foam body substrate (a),wherein A and B differ in the grain size of the metal or metal alloy, wherein the grain size of the metal or metal alloy A is in the range of 1 μm to 100 μm and/or the grain size of the metal B is in the range of 1 nm to 50 μm; andwherein the metal B is silver and the metal or metal alloy A is selected from a group consisting of Ni, Cr, Co, Cu, Ag, and any alloy thereof; (i) provision of a porous organic polymer foam;', '(ii) deposition of at least one metal or metal alloy A on the porous organic polymer foam;', '(iii) burning off of the porous organic polymer foam to obtain the metallic foam body substrate (a); and', '(iv) deposition by electroplating of the metallic layer (b) of a metal or metal alloy B at least on a part of the surface of the metallic foam body (a);, 'obtainable by a process comprising the steps'} (ii1) deposition of a first metallic layer containing a metal or metal alloy A1 by a chemical or physical vapor deposition method; and', '(ii2) deposition of a second metallic layer containing a metal or metal alloy A2 by electroplating;, 'wherein step (ii) comprises the steps'}wherein the metal or metal alloy A1 is selected from a group consisting of Ni, Cr, Co, Cu, Ag, and any alloy thereof and wherein A2 and B are silver.2. A metallic foam body according to claim 1 , wherein A and B differ in the crystal grain size of the metal or metal alloy.3. A metallic foam body according to claim 1 , wherein the average thickness of the first metallic layer is up to 0.1 μm and the average thickness of the second metallic layer is from 5 to 50 μm.4. A metallic foam body according to claim 1 , wherein the porous organic polymer foam is selected from the group consisting of polyurethane ...

COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF

A coated article may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test. 1. A coated article comprising:a substrate having a major surface, the major surface comprising a first portion and a second portion, wherein a first direction that is normal to the first portion of the major surface is not equal to a second direction that is normal to the second portion of the major surface, and the angle between the first direction and the second direction is in a range of from about 10 degrees to about 180 degrees; andan optical coating disposed on at least the first portion and the second portion of the major surface, the optical coating forming an anti-reflective surface, wherein:the coated article exhibits at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test;the coated article exhibits a single side average light reflectance as measured at the anti-reflective surface at the first portion of the substrate of about 8% or less, wherein the single side average light reflectance of the first portion is measured at a first incident illumination angle relative to the first direction, wherein the first incident illumination angle comprises an angle in the ...

MULTILAYER MATERIAL

Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C. 1. A thermoregulated multilayer material comprising: [{'sub': 's', 'a transmission coefficient Γsubstantially equal to 0, for rays with a wavelength λ in a range of from 0.25 to 25 μm;'}, 'a reflection coefficient ρs≥0.9, for incident rays with wavelength λ of between 7.5 and 10 μm;, 'a support having'}a thermoregulated layer having a thickness in a range of from 50 to 500 nm and a base of rare earth perovskite cobaltites or rare earth perovskite nickelates or rare earth manganites, the thermoregulated layer topping one of the surfaces of the support; for rays with wavelength λ of between 0.25 and 2.5 μm; an absorption coefficient αm≥0.8; and', {'sub': 'm', 'claim-text': [{'sub': 'm', 'ρ≥0.85, when the temperature T of said multilayer material (M) is ≤100° C.;'}, {'sub': 'm', '0.3≤ρ≤0.85, when the temperature T of said multilayer material in a range of from 100 to 400° C.'}], 'for incident rays with wavelength λ of between 7.5 and 10 μm; a reflection coefficient ρ, wherein], 'wherein the thermoregulated material has2. The thermoregulated multilayer material according to claim 1 , wherein the perovskites have formula:{'sub': '3', 'ABO'}wherein:“A” is at least one single chemical element or a group of chemical elements belonging to the rare earths group;“B” is either cobalt Co, or nickel Ni, or manganese Mn, and{'sub': '3', '“O” represents three oxygens.'}3. The thermoregulated multilayer material according to claim 2 , wherein “A” corresponds to at least one chemical ...

Coated glass pane

The present invention relates to a transparent substrate comprising a multiple layer coating stack and the use of same in the manufacture of a double glazing unit, wherein the multiple layer coating stack comprises, n functional metal layer, m; and n plus 1 (n+1) dielectric layer, d, wherein the dielectric layers are positioned before and after each functional metal layer, and wherein n is the total number of functional metal layer in the stack counted from the substrate and is greater than or equal to 3; and wherein each dielectric layer comprises one or more layers, characterized in that the geometrical layer thickness of each functional metal layer in the coating stack Gm, is greater than the geometrical layer thickness of each functional metal layer appearing before it in the multiple layer coating stack, that is, Gmi+1>Gmi wherein i is the position of the functional metal layer in the coating stack counted from the substrate, and wherein for each dielectric layer d located before and after each functional metal layer m, the optical layer thickness of each dielectric layer (opln) is greater than or equal to the optical layer thickness of the dielectric layer (opln−1) positioned before it in the coating stack with the proviso that: twice the optical layer thickness of the first dielectric layer (opl1) in the coating stack, is less than the optical layer thickness of the second dielectric layer (opl2) in the coating stack, that is, (2×opl1)<opl2; and twice the optical layer thickness of the last dielectric layer (opln+1) in the coating stack, is greater than the thickness of the optical layer thickness of the penultimate dielectric layer (opln), that is, (opln)<(opln+1)×2.

High Definition Stencils With Easy to Clean Properties for Screen Printing

This invention is for production of a screen printing stencil system with hard nickel or nickel-cobalt base metal foil () with amorphous carbon nanocomposite intermediate layer having low coefficient of friction () and alternative layers of amorphous carbon nanocomposite () and amorphous fluorocarbon () optimized for its wettability in broad contact areas between squeegee blade and the stencil and oleophobic amorphous fluorocarbon-rich coatings () on the inner walls of through holes () and () to provide easy release of solder paste or metallic paste for high definition screen plating of small feature dimensions and easy to clean properties. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. The process for manufacturing of the stencil system comprising the steps ofa. plating a base nickel layer in a nickel sulfamate solution for enhanced surface smoothness;b. develop the designed features of a PCB through photolithographic process on the base nickel layer;{'b': '10', 'c. electroforming the hard nickel or nickel-cobalt stencil base metal () in the said solutions;'}{'b': 30', '31, 'd. deposition of the said intermediate amorphous carbon a-C:H and a-Si:O, nanocomposite layer () and () in a vacuum chamber using PACVD, PVD, and FAPVD technology; and'}{'b': 40', '41', '42, 'e. deposition of the said alternative layers of alternative layers () of hydrophilic a-C:H and a-Si:O nanocomposite () and fluorinated a-C:H and a-Si:O ().'}{'b': 43', '20', '21, 'f. deposition of the said fluorocarbon-rich top layer () on the inner walls of the featured through holes () and ().'}7. A substrate stencil comprising:a metal substrate including nickel or a nickel-cobalt alloy and forming at least one aperture, the metal substrate having microhardness in range between 440 and 580 Vickers.8. The substrate stencil of claim 7 , the metal substrate consisting essentially of nickel and having microhardness in range between 440 and 520 Vickers.9. The substrate stencil of claim 7 ...

OPTICAL MEMBER AND METHOD FOR PRODUCING OPTICAL MEMBER

The present invention provides an optical member excellent in antifouling properties, rubbing resistance, and antifog properties. The optical member of the present invention includes, on a surface thereof, an uneven structure provided with multiple projections at a pitch not longer than a wavelength of visible light, the projections each including a hydrophilic portion at its tip. Preferably, each of the projections is formed from a hydrophobic resin and has its tip covered with a hydrophilic material, the hydrophilic material contains silicon dioxide, and the hydrophilic material has a thickness of 30 nm or smaller. 1. An optical member comprising , on a surface thereof , an uneven structure provided with multiple projections at a pitch not longer than a wavelength of visible light ,each of the projections being formed from a hydrophobic resin, having its tip covered with a hydrophilic material, and including a hydrophilic portion covered with the hydrophilic material at the tip and a hydrophobic portion where the hydrophobic resin is exposed.2. (canceled)3. The optical member according to claim 1 ,wherein the hydrophilic material contains silicon dioxide.4. The optical member according to claim 1 ,wherein the hydrophilic material has a thickness of 30 nm or smaller.5. (canceled)6. A method for producing the optical member according to claim 1 , comprisingforming a film of the hydrophilic material at the tip of each of the projections.7. The method for producing the optical member according to claim 6 ,wherein the film is formed by plasma deposition.8. The optical member according to claim 1 ,wherein each of the projections has a height of 50 nm or greater and 600 nm or smaller.9. The optical member according to claim 8 ,wherein each of the projections has a height of 100 nm or greater and 300 nm or smaller. The present invention relates to optical members and methods for producing optical members. More specifically, the present invention relates to an optical ...

Suspended type nanowire and manufacturing method thereof

Provided is a suspended type nanowire that is fixed and electrically connected to each of a first electrode disposed on a substrate and a second electrode disposed on the substrate and spaced apart from the first electrode and suspended on the substrate. Here, a cross-section in a direction perpendicular to a longitudinal direction of the suspended type nanowire includes at least one curved part, and the curve part includes a reference surface and at least one side surface extending downward from the reference surface.

RADIO-WAVE-PENETRABLE LAYER HAVING METALLIC LUSTER

Disclosed is a coating layer penetrable by radio wave and having a metallic luster. The coating layer includes a resin layer as an outmost layer to an exterior or front, a metallic texture layer formed on a rear side of the resin layer and comprising a optical film layer including metal oxides having different refractive indexes, and a germanium (Ge) layer to reflect light and a reflection layer formed on the rear side of the metallic texture layer. 114-. (canceled)15. A method of producing a coating layer , comprising:washing and activating a surface of a resin layer using a plasma converted from argon gas;radiating an electron beam using a first refractive material and a second refractive material to form a multilayered optical film layer on the surface of the resin layer,radiating an electron beam using germanium to form a germanium layer.16. The method of claim 15 , wherein the first refractive material comprises TiOand/or CrO.17. The method of claim 15 , wherein the second refractive material comprises SiO.18. The method of claim 15 , wherein the germanium layer is formed on a front side of the multilayered optical film layer claim 15 , on a rear side of the multilayered optical film layer claim 15 , or between the first refractive material and the second refractive material. The present application claims priority to Korean Patent Application No. 10-2015-0175332, filed Dec. 9, 2015 and No. 10-2016-0115705, filed Sep. 8, 2016, the entire content of which is incorporated herein for all purposes by this reference.The present invention relates to a coating layer, or particularly a radio-wave-penetrable coating layer having a metallic luster, such that the coating layer of the present invention may protect SCC radar while radio waves may penetrate the coating layer.A smart cruise control (SCC) system detects movement of a preceding vehicle using a radar mounted on a front portion of a vehicle, thereby controlling engine and brakes to maintain a distance from the ...

System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes

A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0 Подробнее

MAGNETIC RECORDING MEDIUM

The average thickness tof a magnetic recording medium meets the requirement that t≤5.5 [μm], and the dimensional change amount Δw in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/N≤Δw. 2. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw satisfies 750 ppm/N≤Δw≤8000 ppm/N.3. The magnetic recording medium according to claim 1 , wherein the dimensional change amount Δw satisfies 800 ppm/N≤Δw≤8000 ppm/N.4. The magnetic recording medium according to claim 1 , whereina temperature expansion coefficient α of the magnetic recording medium satisfies 6 ppm/° C.≤α≤8 ppm/° C., anda humidity expansion coefficient β of the magnetic recording medium satisfies β≤5 ppm/% RH.5. The magnetic recording medium according to claim 1 , wherein a Poisson's ratio ρ of the magnetic recording medium satisfies 0.3≤ρ.6. The magnetic recording medium according to claim 1 , wherein an elastic limit value σin the longitudinal direction of the magnetic recording medium satisfies 0.8 N≤σand the elastic limit value σdoes not depend on a rate V in elastic limit measurement.7. The magnetic recording medium according to claim 1 , wherein an arithmetic mean roughness Ra of a magnetic surface of the magnetic recording medium is 2.0 nm or less.8. The magnetic recording medium according to claim 1 , further comprisinga magnetic surface and a back surface on an opposite side to the magnetic surface, whereinan interlayer friction coefficient μ between the magnetic surface and the back surface satisfies 0.20≤μ≤0.80.9. The magnetic recording medium according to claim 1 , wherein the squareness ratio in the perpendicular direction of the magnetic recording medium is 73% or more.10. The magnetic recording medium according to claim 1 , wherein a ratio R (=Hc(50)/Hc(25)*100) between a coercive force Hc (50) measured in a perpendicular ...

Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.

Coating for glass with improved scratch/wear resistance and oleophobic properties

A protective coating on a front surface of a glass, by forming a diamond-like coating over the front surface of the glass; performing passive sputtering to form a protective layer directly on the diamond-like coating; performing reactive sputtering to form an adhesion layer directly on the protective layer; forming an anti-finger print layer directly over the adhesion layer.

Surface-coated cutting tool

In a surface-coated cutting tool, a hard coating includes one or more layers. At least one layer thereof is a hard coating layer composed of a complex nitride or carbonitride layer of Al, Cr, and Si and satisfying (Al 1-x-y Cr x Si y )(C z N 1-z ) where x, y and z are atomic ratios and satisfy 0.1≦x≦0.4, 0.01≦y≦0.2, and 0≦z≦0.3, respectively. The hard coating layer contains particles including: less than 10 atomic % of non-metal components selected from C and N; and metal components selected from Cr, Al and Si. In the cross-section perpendicular to the tool body surface, the number ratio of oblate particles with an Al content of 50 atomic % or less, a long diameter of less than 0.5 μm, and an aspect ratio of 2.0 or more is 90% or more with respect to the total number of the particles.

Nanoparticle deposition in porous and on planar substrates

A method of preparing a metal nanoparticle on a surface includes subjecting a metal source to a temperature and a pressure in a carrier gas selected to provide a vapor metal species at a vapor pressure in the range of about 10 −4 to about 10 −11 atm; contacting the vapor metal species with a heated substrate; and depositing the metal as a nanoparticle on the substrate.

Decorative member

The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (Cu a O x ).

METHOD FOR PREPARING AMMONIUM THIOMOLYBDATE-POROUS AMORPHOUS CARBON COMPOSITE SUPERLUBRICITY FILM

A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried. During the friction process, the composited porous amorphous carbon superlubricity film prepared in the present disclosure promotes the in-situ decomposition of ammonium thiomolybdate to generate molybdenum disulfide by utilizing the friction heat at the initial stage of running-in, further to generate a graphene-like structure under the function of a catalyst, thus realizing a macroscopic super lubricity through a heterogeneous incommensurate contact between graphene and molybdenum disulfide. 1. A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film , comprising: cleaning a substrate under an ultrasonic,', 'placing the cleaned substrate in a vacuum chamber,', {'sup': '−3', 'vacuuming the vacuum chamber to 1×10Pa,'}, 'performing a deposition for 20 minutes by a magnetron sputtering by utilizing Ti0.7Ni0.3 target under conditions of a magnetron sputtering current of 5 A, an ion source voltage of 1300-1500 V, a pulse width of 100-400 microseconds, an argon pressure of 1 Pa, and a bias voltage of 200 V,', 'under the conditions, introducing an argon mixture containing 13% nitrogen, and performing another deposition for 40 minutes, to obtain a transition layer on the substrate;, 'preparing a transition layer with a high bonding force by 'performing a reactive magnetron sputtering by utilizing an aluminum-carbon composite target containing 10% aluminum, under conditions of reaction gases ...

Magnetically Enhanced High Density Plasma-Chemical Vapor Deposition Plasma Source For Depositing Diamond and Diamond-Like Films

A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed. 1. A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron , the method comprising:positioning the HEDP magnetron in a vacuum with an anode, a cathode target, a magnet assembly, the substrate, and a feed gas;applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), the PCN comprising at least one inductor and at least one capacitor; andadjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN, the PCN converting the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron with pulse current densities in a range of about 0.1 to 20 A/cm2, the asymmetric AC signal operatively coupled to the cathode target, the asymmetric AC signal ...

COATING WITH ENHANCED SLIDING PROPERTIES

The present invention relates to coated sliding parts having coating systems which allow better sliding performance under dry and/or under lubricated conditions. The coating systems according to the present invention being characterized by having an outermost layer which—is a smooth oxide-containing layer in case of sliding applications under lubricated conditions, or—is a self-lubricated layer comprising molybdenum nitride, in case of sliding applications under dry or lubricated conditions, is a self lubricated layer with a structured surface comprising a multitude of essentially circular recesses with diameters of several micrometers or below, the recesses randomly distributed over the surface. 1101019. A sliding component (′) having a sliding surface to be exposed to relative movement with respect to another component under dry or lubricated conditions , wherein the sliding surface of the sliding component (′) is at least partially coated with a coating system (′) comprising a nitride-containing running-in layer deposited as outermost layer (′) , characterized in that ,{'b': '9', 'the outermost layer (′) comprises molybdenum nitride and at least one element or a mixture of elements whose melting point is lower than the molybdenum melting point, or'}{'b': '9', 'the outermost layer (′) consists of molybdenum oxynitride.'}2109. The sliding component (′) according to claim 1 , characterized in that claim 1 , the outermost layer (′) consists of molybdenum oxynitride and exhibits a monolayer or a multilayer or a gradient layer architecture.310. The sliding component (′) according to claim 2 , characterized in that claim 2 , the molybdenum oxynitride layer exhibits a multilayer architecture consisting ofa combination of molybdenum nitride and molybdenum oxide single layers, and/ora combination of oxynitride single layers having different element compositions along the running-in layer thickness.410. The sliding component (′) according to claim 3 , characterized in that ...

ARC EVAPORATION DEVICE

An arc evaporation device includes a bar-shaped target having a front end surface and a side surface to be melted and evaporated from the front end surface by arc discharge; an arc power supply; a target feed unit which moves the target axially and in a feed direction; an ignition rod capable of contact with the side surface of the target, in an intersecting direction intersecting the feed direction; a rotary actuator which moves the ignition rod along the intersecting direction from a retraction position apart from the side surface in the intersecting direction to make the ignition rod enter a transport region into which the target is fed; and a detection unit which detects whether or not the ignition rod has come into contact with the side surface of the target during movement of the ignition rod. 1. An arc evaporation device comprising:a bar-shaped target which has a front end surface as one end surface in an axial direction and a side surface extending in the axial direction, the side surface being continuous with a peripheral edge of the front end surface, the target being configured to be melted and evaporated from the front end surface thereof by arc discharge;an electrode for discharging between the electrode and the front end surface of the target;an arc power supply which applies a voltage between the target and the electrode to cause arc discharge between the front end surface and the electrode;a target feed unit which moves the target in a feed direction in which the front end surface advances and along the axial direction;a contact unit having a shape capable of making contact with the side surface of the target, at a predetermined position with respect to the feed direction, in an intersecting direction intersecting the feed direction;a contact-unit driving unit which moves the contact unit along the intersecting direction from a retraction position apart from the side surface in the intersecting direction, so as to make the contact unit enter a ...

Uv light emitting devices and systems and methods for production

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. 1. A method of fabricating an ultraviolet (UV) light emitting device comprising:receiving a UV transmissive substrate; forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and', 'forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and, 'forming a UV transmissive layer upon the UV transmissive substrate, comprising forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer;', 'forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and', 'forming a p-type nitride layer upon the one or more quantum well structures., ' ...

METHOD FOR PREPARING HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND THIN FILM FORMING APPARATUS

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties. 1. An apparatus for forming a thin film to constitute a photomask blank , comprisinga substrate to constitute the photomask blank,plural targets,a gas supply for supplying a sputtering gas containing a rare gas and a nitrogen-containing gas, andmeans for causing electric discharge to the plural targets at the same time,wherein the thin film to constitute a photomask blank is formed by rotating the substrate on its axis, sputtering the plural targets, and depositing a thin film on the substrate,the plural targets are disposed such that provided that the rotational axis of the substrate and a vertical line passing the center of a sputter surface of each of the plural targets are parallel and spaced apart a distance, one target has the closest distance between the rotational axis and the vertical line, the distance between the rotational axis and the vertical line of another target is 1 to 3 times the distance between the rotational axis and the vertical line of the one target, and the angle included between normal lines extending from the rotational axis to vertical lines has a maximum value of 70° to 180°.2. The apparatus of wherein at least two normal lines extend from the rotational axis to vertical lines claim 1 , and any of the angles included between adjacent normal lines is in a range of 70° to 180°.3. The apparatus of wherein the plural targets are silicon targets.4. The apparatus of wherein a halftone ...

Hybrid dielectric film for high temperature application

A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.

Sputtering device

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2 ; target holding parts 4 for holding the targets T inside the vacuum chamber 2 ; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×10 18 cm −3 or lower, and a carrier mobility of 10 cm 2 V −1 sec −1 or higher.

Method And System For Producing Coated Steel Components

A coated steel component is provided. The coated steel component includes a substrate composed of a steel sheet which can be supplied to a hot-forming process. The coated steel component also possesses a non-metallic coating on the basis of silicon, in a layered structure. The layered structure includes three functional layers having the composition SiOxNyCz, wherein x lies between 30 and 70%, y lies between 0 and 35%, and z lies between 0 and 50%.

HIERARCHICAL CELLULAR MATERIALS AND METHOD OF MAKING AND USING THE SAME

Cellular materials and methods of making and using the cellular materials. 1. A method of making a cellular material comprising:conducting phase separation of block copolymers resulting in a particular morphology;selective removal of one polymer from the block copolymers to form a lattice;conducting metal deposition on the lattice; anddissolving a remaining polymer to obtain the cellular material.2. The method according to claim 1 , wherein the morphology is a gyroid.3. The method according to claim 2 , wherein the morphology is a double gyroid.4. The method according to claim 1 , wherein the morphology is an octet truss.5. The method according to claim 1 , wherein the metal deposition is by electrodeposition.6. The method according to claim 1 , wherein the block copolymer is block copolymer poly(4-fluorostyrene-r-styrene)-b-poly(d claim 1 ,l-lactide) (PFS-b-PLA).7. The method according to claim 3 , wherein the metal gyroid has a strut diameter of 13 nm.6. The method according to claim 3 , wherein the gyroid is a metal gyroid having a unit-cell size of 45 nm.7. The method according to claim 3 , wherein the gyroid is a metal gyroid having a grain size of 500 nm to 1 micron.8. The method according to claim 1 , wherein the gyroid is a metal gyroid having a volume fraction of 40%.9. The method according to claim 1 , including generating an octet lattice from a gyroid nanolattice.10. The method according to claim 1 , including generating an octet lattice from an octet nanolattice.11. The method according to claim 1 , further comprising laser cutting the cellular material to make trusses.12. The method according to claim 1 , further comprising laser cutting the cellular material to make octet lattice.13. The method according to claim 11 , further comprising laser cutting the cellular material to make octet lattice.14. The method according to claim 13 , further comprising assembling the trusses and octet lattice to form hierarchical octet lattice.15. A method of making a ...

Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof

A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source. 1. A vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance (TCR) containing a rare earth element of Yttrium serving as a dopant in a preparation process.2. The vanadium oxide thermo-sensitive film material with high TCR claim 1 , as recited in claim 1 , comprising a substrate and a yttrium-doped vanadium oxide film layer;wherein the yttrium-doped vanadium oxide film layer is deposited on the substrate;wherein the yttrium-doped vanadium oxide film layer comprises three elements of vanadium, oxygen and yttrium, wherein an atomic percentage content of yttrium atom is at a range of 1%-8%, an atomic percentage content of vanadium is at a range of 20-40%, and a residue is oxygen element.3. The vanadium oxide thermo-sensitive film material with high TCR claim 2 , as recited in claim 2 , wherein the substrate is a silicon wafer with a SiNx film claim 2 , a silicon wafer with SiOfilm claim 2 , K9 glass or AlOsubstrate.4. A method for preparing a vanadium oxide thermo-sensitive film material ...

FABRICATION METHOD OF STRONTIUM NIOBIUM OXYNITRIDE FILM HAVING SMALL CARRIER DENSITY AND ITS USE

The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10cm. The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×10cm, (II) a strontium niobium oxynitride film having carrier density not more than 1×10cm, (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use. 1. A method for growing a strontium niobium oxynitride film , the method comprising:{'sup': 18', '−3, '(a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10cm.'}2. The method according to claim 1 , whereina target used in the sputtering method is formed of strontium niobate; andthe strontium niobium oxynitride film is grown in an atmosphere containing nitrogen.3. The method according to claim 2 , wherein{'sub': 2', '2', '7, 'the strontium niobate is represented by the chemical formula SrNbO.'}4. The method according to claim 2 , whereinthe atmosphere further contains oxygen.5. The method according to claim 2 , whereinthe atmosphere further contains argon.6. The method according to claim 4 , whereinthe atmosphere further contains argon.7. The method according to claim 1 , whereinthe strontium titanate substrate has a single orientation plane; andthe strontium niobium oxynitride film has a single orientation plane.8. The method according to claim 7 , whereinthe single orientation plane of the strontium titanate substrate is an ...

High-Frequency-Transparent Component and Method for Producing the Same

The invention relates to a high-frequency-transparent component comprising: a main body () and a coating () consisting of metal-doped Al2O3 sputtered thereon, and to a method for producing said component. 110.-. (canceled).11. A high-frequency-transparent component comprising:a main element; and{'sub': ['2', '3'], '#text': 'a layer comprising AlOwith metal doping, wherein the layer is sputtered the main element.'}12. The component according to claim 11 , wherein the layer is doped and configured such that a transmission attenuation of the component in a frequency range from 60 GHz to 90 GHz is altered by less than 0.1 dB by the layer.13. The component according to claim 11 , wherein doping is carried out with a concentration in a range from 10cmto an upper doping concentration claim 11 , anda surface resistance of the layer is at least 10 MOhm.14. The component according to claim 11 , wherein the metal doping is doping with at least one of Au claim 11 , Ag claim 11 , Cu claim 11 , Ni claim 11 , Pt or Ti.15. The component according to claim 11 , wherein a thickness of the layer is in a range from 25 nm to 100 nm.16. The component according to claim 11 , wherein the main element comprises a polymer.17. The component according to claim 11 , wherein the component is a vehicle component.18. The component according to claim 11 , wherein the component is a radar cover.19. A process for producing a high-frequency-transparent component claim 11 , the method comprising:providing a main element; and{'sub': ['2', '3'], '#text': 'sputtering a metal-doped AlOlayer onto the main element.'} The invention relates to a high-frequency-transparent component and a process for the production thereof and in particular a radar-transparent vehicle component.Many sensors and mobile appliances with wireless communication functions are installed in motor vehicles. For these to be invisible to the customer, they are, for example, concealed behind outer skin components. Thus, for example, a ...

FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THEREFROM

In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films. 152.-. (canceled)53. A method of thin film deposition , the method comprising: a first region initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material, the sputtering-target material (i) comprising a metal and (ii) having a first grain size, and', 'separated from the first region by a distinct boundary line, a second region (i) comprising the metal and (ii) having a second grain size finer than the first grain size; and, 'providing within a sputtering chamber a rejuvenated sputtering target comprisingsputtering using the rejuvenated sputtering target to produce a thin film comprising the metal.54. The method of claim 53 , further comprising introducing a reactive gas within the sputtering chamber while sputtering using the rejuvenated sputtering target claim 53 , the thin film comprising a reaction product of the metal and the reactive gas.55. The method of claim 54 , wherein the reactive gas comprises at least one of oxygen claim 54 , nitrogen claim 54 , or a silicon-containing gas.56. The method of claim 53 , wherein the metal is selected from the group consisting of niobium claim 53 , tantalum claim 53 , tungsten claim 53 , molybdenum claim 53 , zirconium claim 53 , titanium claim 53 , and alloys thereof.57. The method of claim 53 , wherein the metal comprises at least one of chromium claim 53 , vanadium claim 53 , magnesium claim 53 , tin claim 53 , lead claim 53 , aluminum claim 53 , zinc claim 53 , copper claim 53 , rhodium claim 53 , silver claim 53 , gold claim 53 , cobalt claim 53 , iron claim 53 , ruthenium claim 53 , rhenium claim 53 , gallium claim 53 , indium claim 53 , or antimony.58. The method of claim 53 , wherein at least a portion of the distinct boundary line corresponds to a contour of a recessed ...

INTEGRATED ANODE AND ACTIVATED REACTIVE GAS SOURCE FOR USE IN A MAGNETRON SPUTTERING DEVICE

The invention relates to an integrated anode and activated reactive gas source for use in a magnetron sputtering device and a magnetron sputtering device incorporating the same. The integrated anode and activated reactive gas source comprises a vessel having an interior conductive surface, comprising the anode, and an insulated outer body isolated from the chamber walls of the coating chamber. The vessel has a single opening with a circumference smaller that that of the vessel in communication with the coating chamber. Sputtering gas and reactive gas are coupled through an input into the vessel and through the single opening into the coating chamber. A plasma is ignited by the high density of electrons coming from the cathode and returning to the power supply through the anode. A relatively low anode voltage is sufficient to maintain a plasma of activated reactive gas to form stoichiometric dielectric coatings. 123-. (canceled)24. An integrated anode and activated reactive gas source , comprising a vessel including:an interior conductive surface of the vessel, electrically coupled to a positive output of a power supply, comprising the anode such that the anode is the preferred return path for electrons, an insulated outer surface of the vessel electrically isolated from the chamber walls;a single opening in communication with the coating chamber;a sputtering gas source coupled into the vessel; anda reactive gas source; andwherein the interior conductive surface is electrically insulated from the chamber walls by an insulating material.25. The integrated anode and activated reactive gas source defined in claim 24 , wherein the single opening is smaller than a circumference of the vessel to shield the interior conductive surface from most sputtered material.26. The integrated anode and activated reactive gas source defined in claim 24 , wherein the single opening is dimensioned to raise the pressure locally within the vessel higher than a pressure in the coating ...

TREATMENT METHOD USING A BEAM OF SINGLY - OR MULTIPLY - CHARGED GAS IONS IN ORDER TO PRODUCE COLOURED METALS

The disclosure relates to a treatment method for coloring a metal that includes a) bombardment of the metal with a beam of singly- or multiply-charged gas ions produced by an electron cyclotron resonance source; b) heat treatment in ambient air so as to color the implanted metal using a temperature between 100° C. and 400° C. and an exposure time of between 1 minute and 4 hours. 1. A treatment process for coloring a metal , comprising: [{'sup': 16', '2', '19', '2, 'a dose of mono- and multicharged ions of the gas implanted per unit of surface area by the bombardment is in a range of between 10ions/cmand 10ions/cm,'}, 'an acceleration voltage is in a range of between 5 kV and 1000 kV; and, 'a) bombarding the metal with a beam of mono- and multicharged ions of a gas produced by an electron cyclotron resonance (ECR) source, wherein 'the heat treatment is performed a temperature of between 100° C. and 600° C. for an exposure time of between 1 min and 4 hours.', 'b) performing a heat treatment for coloring the implanted metal, wherein2. The process as claimed in claim 1 , wherein the mono- and multicharged ions of the gas of the beam of ions are ions of the elements selected from the group consisting of helium (He) claim 1 , neon (Ne) claim 1 , argon (Ar) claim 1 , krypton (Kr) and xenon (Xe).3. The process as claimed in claim 1 , wherein the mono- and multicharged ions of the gas of the beam of ions are ions of the gases selected from the group consisting of nitrogen (N) and oxygen (O).4. The process as claimed in claim 1 , wherein the mono- and multicharged ions of the gas are all ions of one and the same atomic compound.5. The process as claimed in claim 4 , wherein the atomic compound is a gas at ambient temperature.6. The process as claimed in claim 1 , wherein the beam of mono- and multicharged ions of the gas comprises 10% of multicharged ions or more than 10% of multicharged ions.7. The process as claimed in claim 1 , wherein the heat treatment is carried out in ...

THIN-WALLED HEAT EXCHANGER WITH IMPROVED THERMAL TRANSFER FEATURES

A thin-walled heat exchanger includes a component having at least one thermal transfer structure. The thermal transfer structure includes a wall having a thickness ranging from about 0.003 in to about 0.010 in. 1. A thin-walled heat exchanger comprising:a component having at least one thermal transfer structure;wherein the thermal transfer structure comprises a wall having a thickness ranging from about 0.003 in to about 0.010 in.2. The heat exchanger of claim 1 , wherein the at least one thermal transfer structure comprises a tube.3. The heat exchanger of claim 1 , wherein the component is attached to a manifold.4. The heat exchanger of claim 3 , wherein the component is attached to the manifold using a brazing or welding technique.5. The heat exchanger of claim 1 , wherein the component comprises an integral manifold.6. The heat exchanger of claim 1 , wherein the component is formed from a material selected from the group consisting of copper claim 1 , nickel claim 1 , nickel-cobalt claim 1 , nickel-phosphorus claim 1 , nickel-boron claim 1 , nickel-tungsten claim 1 , nickel-chromium claim 1 , and combinations thereof.7. The component of and further comprising at least one bulkhead structure.8. The heat exchanger of claim 7 , wherein the component comprises an opening within the bulkhead structure or the thermal transfer structure claim 7 , the opening configured to drain a sacrificial body material.9. The heat exchanger of claim 1 , wherein the component comprises a plurality of thermal transfer structures.10. A method of forming a component of a heat exchanger claim 1 , the method comprising:producing, using a 3D printing process, a sacrificial body from a polymer material, the sacrificial body having a shape corresponding to a shape of the component;selectively coating a first surface of the sacrificial body with a metallic material to form a thermal transfer wall; andremoving the portion of the sacrificial body beneath the thermal transfer wall.11. The method ...

SPUTTERING APPARATUS INCLUDING GAS DISTRIBUTION SYSTEM

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight. 1. A method of using a magnetron sputtering apparatus that comprises a vacuum chamber having a controlled environment , the magnetron sputtering apparatus including a target comprising one or more sputterable materials , wherein the target includes a sputtering zone that is racetrack shaped and extends longitudinally along a longitudinal axis , the sputtering zone including two straightaway areas sandwiched between first and second turnaround areas , the magnetron sputtering apparatus further including a gas distribution system comprising a plurality of interfaces located along the longitudinal axis , wherein the plurality of interfaces comprises a plurality of first interfaces and a plurality of second interfaces , the first interfaces positioned at each of the first and second turnaround areas to supply a first gas mixture to both of the first and second turnaround areas , such that the first gas mixture controls sputtering rate at localized areas of both of the first and second turnaround areas , whereas the second interfaces are positioned at each ...

THIN FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS, AND THEIR FABRICATION METHODS

The present disclosure provides a thin film transistor, a thin film transistor array substrate, and a display apparatus, and their fabrication methods. The thin film transistor is formed by forming a source and drain electrode structure. To form the source and drain electrode structure, at least one metal film is formed using a target of a metal element in a sputtering chamber. A gas is introduced in the sputtering chamber to in-situ react with the metal element to form an anti-reflection layer over the at least one metal film. 117-. (canceled)18. A method for fabricating a thin film transistor , comprising:forming a source and drain electrode structure, comprising:forming at least one metal film using a target of a metal element in a sputtering chamber, andintroducing a gas in the sputtering chamber to in-situ react with the metal element to form an anti-reflection layer over the at least one metal film.19. The method according to claim 18 , wherein the anti-reflection layer has a reflectivity lower than any of the at least one metal film.20. The method according to claim 18 , further comprising:controlling a concentration of the gas introduced in the sputtering chamber to control a reflectivity of the anti-reflection layer.21. The method according to claim 18 , wherein the anti-reflection layer has a thickness ranging from about 10 nm to about 100 nm.22. The method according to claim 18 , wherein:the gas contains nitrogen, andthe anti-reflection layer is a nitride film of the metal element.23. The method according to claim 18 , wherein the step of forming at least one metal film comprises:forming a first metal film containing a first metal element, andforming a second metal film over the first metal film using the target of the metal element in the sputtering chamber.24. The method according to claim 23 , further comprising:while the second metal film is being formed by a sputtering process in the sputtering chamber, introducing the gas to the sputtering chamber ...