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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 5159. Отображено 100.
02-02-2012 дата публикации

Device housing and method for making the same

Номер: US20120027968A1
Автор: Cheng-Shi Chen, Cong Li, Hsin-Pei Chang, Huann-Wu Chiang, Wen-Rong Chen
Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A device housing is provided. The device housing includes a substrate, and an anti-fingerprint film formed on the substrate. The anti-fingerprint film is a metal-nitrogen-oxygen compound coating. A method for making the device housing is also described there.

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Номер записи: 1
09-02-2012 дата публикации

Reactive sputtering with multiple sputter sources

Номер: US20120031749A1
Автор: Hartmut Rohrmann, Kurt Ruhm, Martin Dubs
Принадлежит: OC OERLIKON BALZERS AG

The apparatus ( 1 ) for coating a substrate ( 14 ) by reactive sputtering comprises an axis ( 8 ), at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ) and a power supply connected to the targets ( 11,12 ), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate ( 14 ) by coating a substrate ( 14 ) by reactive sputtering in an apparatus ( 1 ) comprising an axis ( 8 ). The method comprises a) providing a substrate ( 14 ) to be coated; b) providing at least two targets ( 11,12 ) in an arrangement symmetrically to said axis ( 8 ); c) alternatively operating said targets ( 11,12 ) as cathode and anode during coating. Preferably, the targets ( 11,12 ) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

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Номер записи: 2
26-04-2012 дата публикации

Sputtering target material, silicon-containing film forming method, and photomask blank

Номер: US20120100467A1
Автор: Hideo Kaneko, Hiroki Yoshikawa, Yokio INAZUKI
Принадлежит: Shin Etsu Chemical Co Ltd

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

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Номер записи: 3
23-08-2012 дата публикации

Method of coating metal shell with pure white film

Номер: US20120211353A1
Автор: Chung-Pei Wang, ming-yang Liao
Принадлежит: Hon Hai Precision Industry Co Ltd

A method of coating a pure white film includes a first step of providing a metal shell, a second step of forming a bonding layer on a surface of the metal shell by a first magnetron sputtering process, and a third step of forming a pure white layer on a surface of the bonding layer by a second magnetron sputtering process. The bonding layer includes chromium nitride. In the second process, aluminum and chromium corporately serves as targets. Oxygen serves as a reactive gas. A ratio of a bombarding power of the aluminum to that of the chromium is about 12:1. A bias voltage ranges from 180 volts to 220 volts. The second magnetron sputtering process lasts for about 58 to 62 minutes and goes on under a temperature ranged from 180° C. to 220° C. And the pure white layer includes aluminum oxide and chromium oxide.

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Номер записи: 4
23-08-2012 дата публикации

Method for producing indium tin oxide layer with controlled surface resistance

Номер: US20120213949A1
Автор: Chien-Min Weng, Feng-Shiang Yao, Fu-Jen Wang, Shih-Liang Chou, Tzu-Wen Chu
Принадлежит: Applied Vacuum Coating Technologies Co Ltd

The invention relates to a method for producing a transparent indium tin oxide conductive layer on a substrate. The method involves using a target having a low indium-to-tin ratio in a low temperature manufacturing process (less than 200° C.), and introducing a plasma gas and a reaction gas into the reaction chamber to allow sputtering of an indium tin oxide layer on the substrate under a low oxygen environment, followed by subjecting the sputtered substrate to a heat treatment at 150˜200° C. for 60˜90 minutes. The indium tin oxide layer thus produced will crystallize completely and have the advantageous properties of low surface resistance and high uniformity.

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Номер записи: 5
27-09-2012 дата публикации

Coated article and method of making the same

Номер: US20120244382A1
Автор: Cheng-Shi Chen, Hsin-Pei Chang, Huann-Wu Chiang, Wen-Rong Chen, Ying-Ying Wang
Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A coated article includes a bonding layer, an iridium layer, a chromium oxynitride layer and a chromium nitride layer formed on a substrate in that order. The substrate is made of die steel.

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Номер записи: 6
04-10-2012 дата публикации

Method for manufacturing magnetic recording medium, and magnetic recording/reproducing apparatus

Номер: US20120250186A1
Автор: Atsushi Hashimoto, Toshikazu IRISAWA
Принадлежит: Showa Denko KK

A method for manufacturing a magnetic recording medium including at least a non-magnetic substrate, a soft magnetic underlayer, an orientation control layer that controls an orientation of an immediate upper layer, and a perpendicular magnetic layer in which a magnetization easy axis is mainly perpendicularly oriented with respect to the non-magnetic substrate so as to be laminated one another on the non-magnetic substrate. The perpendicular magnetic layer includes two or more magnetic layers, and each layer is subjected to a crystal growth such that each crystal grain composing each magnetic layer forms a columnar crystal continuous in a thickness direction together with the crystal grains composing the orientation control layer. The orientation control layer, formed of a Co—Cr alloy, is formed by the reactive sputtering using a mixture of a sputtering gas and nitrogen.

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Номер записи: 7
01-11-2012 дата публикации

Process for surface treating iron-based alloy and article

Номер: US20120276413A1
Автор: Cheng-Shi Chen, Hsin-Pei Chang, Huann-Wu Chiang, Wen-Rong Chen, Ying-Ying Wang
Принадлежит: Hon Hai Precision Industry Co Ltd, Hongfujin Precision Industry Shenzhen Co Ltd

A process for surface treating iron-based alloy includes providing a substrate made of iron-based alloy. A chromium-oxygen-nitrogen layer is then formed on the substrate by sputtering. An iridium layer is formed on the chromium-oxygen-nitrogen layer by sputtering. A boron-nitrogen layer is next formed on the iridium layer by sputtering.

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Номер записи: 8
20-12-2012 дата публикации

Pinhole-Free Dielectric Thin Film Fabrication

Номер: US20120318664A1
Автор: Byung-Sung Leo Kwak, Chong JIANG
Принадлежит: Applied Materials Inc

A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

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Номер записи: 9
23-05-2013 дата публикации

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

Номер: US20130127293A1
Автор: Kansho YAMAMOTO, Shinsuke Ikeuchi
Принадлежит: Murata Manufacturing Co Ltd

Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

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Номер записи: 10
06-06-2013 дата публикации

Device housing and method for making same

Номер: US20130143063A1
Автор: Da-Hua Cao, Xu Liu
Принадлежит: Fih Hong Kong Ltd, Shenzhen Futaihong Precision Industry Co Ltd

The device housing includes a substrate having a bonding layer, a hard layer, and a color layer formed thereon, and in that order. The bonding layer is made of metal. The hard layer substantially consists of elemental Cr and elemental C. The color layer substantially consists of elemental Cr, elemental O, and elemental N. The atomic ratio of the elemental Cr, elemental O, and elemental N within the color layer is about (0.8-1.0):(1.2-1.5):(0.3-0.5). The color layer provides a bright blue color for the device housing. A method for making the device housing is also described.

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Номер записи: 11
04-07-2013 дата публикации

Modified surface for an implantable device and a method of producing the same

Номер: US20130172974A1
Автор: Avijit Mukherjee, Shamim M. Malik
Принадлежит: Advanced Cardiovascular Systems Inc

Implantable devices, such as stents, having a surface modified with TiN x C y are disclosed.

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Номер записи: 12
07-11-2013 дата публикации

Reactive sputter deposition of dielectric films

Номер: US20130292244A1
Автор: Georg J. Ockenfuss
Принадлежит: JDS Uniphase Corp

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

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Номер записи: 13
07-11-2013 дата публикации

Modified Surface For An Implantable Device And A Method Of Producing The Same

Номер: US20130297008A1
Автор: Avijit Mukherjee, Shamim M. Malik
Принадлежит: Abbott Cardiovascular Systems Inc

Implantable devices, such as stents, having a surface modified with TiN x O y or TiN x C y are disclosed.

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Номер записи: 14
02-01-2014 дата публикации

Thin-film transistor and zinc oxide-based sputtering target for the same

Номер: US20140001469A1
Автор: Do-Hyun Kim, Dongjo Kim, Gunhyo Lee, Insung Sohn, Jaewoo Park, Juok Park, Sangwon Yoon, Woo-Seok Jeon, Yongjin Lee, Yoon Gyu Lee
Принадлежит: Samsung Corning Precision Materials Co Ltd, Samsung Display Co Ltd

A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

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Номер записи: 15
20-02-2014 дата публикации

Method for producing a thin film made of lead zirconate titanate

Номер: US20140049136A1
Автор: Carsten Giebeler, Neil Conway
Принадлежит: Pyreos Ltd

The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value ( 19 ) in a diffraction angle range from 33 to 35.5°; and completing the thin film.

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Номер записи: 16
27-03-2014 дата публикации

Low emissivity coating stack and double glazing glass

Номер: US20140087100A1
Автор: Kazuya Yaoita
Принадлежит: Asahi Glass Co Ltd

To provide a low emissivity coating stack having a low emissivity for heat rays and having high visible light transmittance and near infrared transmittance. A low emissivity coating stack 1 comprising a transparent substrate 2 , and a thin film laminate portion 3 having at least a first titanium oxide-containing layer 31 containing an oxide of titanium, a low emissivity metal layer 33 containing silver as the main component and a second titanium oxide-containing layer 34 containing an oxide of titanium formed in this order on the transparent substrate 2 , which has a surface resistivity of at most 3.3Ω/□ and has a solar heat gain coefficient of at least 0.60 when formed into double glazing glass.

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Номер записи: 17
27-03-2014 дата публикации

Apparatus for manufacturing an adhesive-free gas barrier film having a ceramic barrier layer

Номер: US20140087161A1
Автор: Bjoern Breiter, Dietmar Hansel, Klaus Heilmann, Thomas Schulte, Tobias Pfeil
Принадлежит: FRESENIUS MEDICAL CARE DEUTSCHLAND GMBH

The present invention relates to an apparatus for manufacturing an adhesive-free gas barrier film comprising conveying means for conveying a film web; at least one first lock system for introducing the film web into a coating chamber of the apparatus; at least one first coating means by means of which the film web can be at least partially coated by depositing a barrier material in the coating chamber; and optionally at least one second lock system for expelling the film web out of the coating chamber; and at least one second coating means by means of which the coated film web can be at least partially coated by extrusion of a plastic melt.

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Номер записи: 18
03-04-2014 дата публикации

Recording film for optical information recording medium, optical information recording medium, and sputtering target used to form said recording film

Номер: US20140093672A1
Автор: Yoko Shida, Yuki Tauchi
Принадлежит: Kobe Steel Ltd

Provided is a recording film for an optical information recording medium with which it is possible to meet all predetermined characteristics requirements and increase productivity while reducing the number of layers in the optical information recording medium. The present invention relates to a recording film for an optical information recording medium on which recording is performed by laser light irradiation, wherein the recording film for an optical information recording medium includes: Mn; at least one element (group X element) selected from the group consisting of Bi, Ag, Co, Cu, In, Sn, and Zn (group X); and oxygen (O). At least some of the Mn and at least some of the group X element are oxidized.

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Номер записи: 19
07-01-2016 дата публикации

PANE WITH THERMAL RADIATION REFLECTING COATING

Номер: US20160002099A1
Автор: HAGEN Jan, MANZ Florian
Принадлежит: SAINT-GOBAIN GLASS FRANCE

The present invention relates to a pane with thermal radiation reflecting coating, comprising at least one substrate () and at least one thermal radiation reflecting coating () at least on the interior-side surface of the substrate (), wherein 1121. Pane with thermal radiation reflecting coating for separating an interior from an external environment , comprising at least one substrate () and at least one thermal radiation reflecting coating () at least on the interior-side surface of the substrate () , whereinthe pane has transmittance in the visible spectral range of less than 5%, and{'b': 2', '1, 'the coating (), proceeding from the substrate (), comprises at least{'b': '3', 'one adhesive layer () that contains at least one material with a refractive index of less than 1.8,'}{'b': '4', 'one functional layer () that contains at least one transparent, electrically conductive oxide,'}{'b': '5', 'one optically high-refractive-index layer () that contains at least one material with a refractive index greater than or equal to 1.8, and'}{'b': '6', 'one optically low-refractive-index layer () that contains at least one material with a refractive index of less than 1.8.'}2189. Pane according to claim 1 , which is a composite pane claim 1 , wherein the substrate () is bonded to a cover pane () via at least one thermoplastic intermediate layer ().3. Pane according to claim 1 , which has transmittance in the visible spectral range of less than 4% claim 1 , preferably less than 3%.43. Pane according to claim 1 , wherein the adhesive layer () contains at least one oxide claim 1 , preferably silicon oxide and/or aluminum oxide claim 1 , particularly preferably aluminum-doped silicon dioxide claim 1 , zirconium-doped silicon dioxide claim 1 , or boron-doped silicon dioxide.53. Pane according to claim 1 , wherein the adhesive layer () has a thickness from 10 nm to 150 nm claim 1 , preferably from 15 nm to 50 nm.64. Pane according to claim 1 , wherein the functional layer () ...

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Номер записи: 20
04-01-2018 дата публикации

Film forming apparatus

Номер: US20180005800A1
Автор: Masato Kon
Принадлежит: Toppan Printing Co Ltd

A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

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Номер записи: 21
04-01-2018 дата публикации

Apparatus for physical vapor deposition reactive processing of thin film materials

Номер: US20180005806A1
Автор: Quang N. Tran, Samuel D. Harkness, IV
Принадлежит: Hia Inc

An apparatus has a cathode target with a cathode target outer perimeter. An inner magnetic array with an inner magnetic array inner perimeter is at the cathode target outer perimeter. An outer magnetic array has an outer magnetic array outer perimeter larger than the inner magnetic array inner perimeter. The inner magnetic array and the outer magnetic array are concentric and each have a single, common, parallel magnetic orientation to form a magnetic field environment that defines a plasma confinement zone adjacent the target cathode and the plasma confinement zone causes a gas operative as a reactive gas and sputter gas to become ionized and thus be directed to the target cathode and cause a second set of ions including species from the target to disperse across a substrate.

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Номер записи: 22
02-01-2020 дата публикации

Piezoelectric body film, piezoelectric element, and method for manufacturing piezoelectric element

Номер: US20200006622A1
Автор: Daigo Sawaki, Naoki Murakami
Принадлежит: Fujifilm Corp

To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A 1+δ [(Zr y Ti 1-y ) 1-x Nb x ]O 2 , Formula (2) 0.35≤r/q<0.58, in this case, in Formula (1), A represents an A site element containing Pb, x and y each independently represent a numerical value of more than 0 and less than 1, standard values of δ and z each are 0 and 3, but these values may deviate from the standard values as long as the perovskite-type oxide has a perovskite structure, and, in Formula (2), a unit of q is atm %.

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Номер записи: 23
09-01-2020 дата публикации

MULTILAYER MATERIAL

Номер: US20200011572A1
Автор: Boileau Alexis, Capon Fabien, Mercs David, Portha Nicolas
Принадлежит:

Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C. 1. A thermoregulated multilayer material comprising: [{'sub': 's', 'a transmission coefficient Γsubstantially equal to 0, for rays with a wavelength λ in a range of from 0.25 to 25 μm;'}, 'a reflection coefficient ρs≥0.9, for incident rays with wavelength λ of between 7.5 and 10 μm;, 'a support having'}a thermoregulated layer having a thickness in a range of from 50 to 500 nm and a base of rare earth perovskite cobaltites or rare earth perovskite nickelates or rare earth manganites, the thermoregulated layer topping one of the surfaces of the support; for rays with wavelength λ of between 0.25 and 2.5 μm; an absorption coefficient αm≥0.8; and', {'sub': 'm', 'claim-text': [{'sub': 'm', 'ρ≥0.85, when the temperature T of said multilayer material (M) is ≤100° C.;'}, {'sub': 'm', '0.3≤ρ≤0.85, when the temperature T of said multilayer material in a range of from 100 to 400° C.'}], 'for incident rays with wavelength λ of between 7.5 and 10 μm; a reflection coefficient ρ, wherein], 'wherein the thermoregulated material has2. The thermoregulated multilayer material according to claim 1 , wherein the perovskites have formula:{'sub': '3', 'ABO'}wherein:“A” is at least one single chemical element or a group of chemical elements belonging to the rare earths group;“B” is either cobalt Co, or nickel Ni, or manganese Mn, and{'sub': '3', '“O” represents three oxygens.'}3. The thermoregulated multilayer material according to claim 2 , wherein “A” corresponds to at least one chemical ...

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Номер записи: 24
03-02-2022 дата публикации

Coated glass pane

Номер: US20220034155A1
Автор: Axel Nothe, Thomas Paul, Tobias Breil
Принадлежит: Pilkington Group Ltd

The present invention relates to a transparent substrate comprising a multiple layer coating stack and the use of same in the manufacture of a double glazing unit, wherein the multiple layer coating stack comprises, n functional metal layer, m; and n plus 1 (n+1) dielectric layer, d, wherein the dielectric layers are positioned before and after each functional metal layer, and wherein n is the total number of functional metal layer in the stack counted from the substrate and is greater than or equal to 3; and wherein each dielectric layer comprises one or more layers, characterized in that the geometrical layer thickness of each functional metal layer in the coating stack Gm, is greater than the geometrical layer thickness of each functional metal layer appearing before it in the multiple layer coating stack, that is, Gmi+1>Gmi wherein i is the position of the functional metal layer in the coating stack counted from the substrate, and wherein for each dielectric layer d located before and after each functional metal layer m, the optical layer thickness of each dielectric layer (opln) is greater than or equal to the optical layer thickness of the dielectric layer (opln−1) positioned before it in the coating stack with the proviso that: twice the optical layer thickness of the first dielectric layer (opl1) in the coating stack, is less than the optical layer thickness of the second dielectric layer (opl2) in the coating stack, that is, (2×opl1)<opl2; and twice the optical layer thickness of the last dielectric layer (opln+1) in the coating stack, is greater than the thickness of the optical layer thickness of the penultimate dielectric layer (opln), that is, (opln)<(opln+1)×2.

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Номер записи: 25
17-01-2019 дата публикации

OPTICAL MEMBER AND METHOD FOR PRODUCING OPTICAL MEMBER

Номер: US20190016084A1
Автор: HAYASHI Hidekazu, Taguchi Tokio, Yamada Nobuaki
Принадлежит:

The present invention provides an optical member excellent in antifouling properties, rubbing resistance, and antifog properties. The optical member of the present invention includes, on a surface thereof, an uneven structure provided with multiple projections at a pitch not longer than a wavelength of visible light, the projections each including a hydrophilic portion at its tip. Preferably, each of the projections is formed from a hydrophobic resin and has its tip covered with a hydrophilic material, the hydrophilic material contains silicon dioxide, and the hydrophilic material has a thickness of 30 nm or smaller. 1. An optical member comprising , on a surface thereof , an uneven structure provided with multiple projections at a pitch not longer than a wavelength of visible light ,each of the projections being formed from a hydrophobic resin, having its tip covered with a hydrophilic material, and including a hydrophilic portion covered with the hydrophilic material at the tip and a hydrophobic portion where the hydrophobic resin is exposed.2. (canceled)3. The optical member according to claim 1 ,wherein the hydrophilic material contains silicon dioxide.4. The optical member according to claim 1 ,wherein the hydrophilic material has a thickness of 30 nm or smaller.5. (canceled)6. A method for producing the optical member according to claim 1 , comprisingforming a film of the hydrophilic material at the tip of each of the projections.7. The method for producing the optical member according to claim 6 ,wherein the film is formed by plasma deposition.8. The optical member according to claim 1 ,wherein each of the projections has a height of 50 nm or greater and 600 nm or smaller.9. The optical member according to claim 8 ,wherein each of the projections has a height of 100 nm or greater and 300 nm or smaller. The present invention relates to optical members and methods for producing optical members. More specifically, the present invention relates to an optical ...

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Номер записи: 26
22-01-2015 дата публикации

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR

Номер: US20150023394A1
Автор: Fujita Toshiaki, Fujiwara Kazutaka, Inaba Hitoshi, Nagatomo Noriaki, Tanaka Hiroshi
Принадлежит:

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0 Подробнее

Номер записи: 27
21-01-2021 дата публикации

Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member

Номер: US20210020415A1
Автор: Kazuhiro Ishikawa, Shuichi Saito, Takashi Hino
Принадлежит: Kyocera Corp

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.

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Номер записи: 28
28-01-2016 дата публикации

Coating for glass with improved scratch/wear resistance and oleophobic properties

Номер: US20160023941A1
Автор: Charles Liu, David Ward Brown, Jun Xie
Принадлежит: Intevac Inc

A protective coating on a front surface of a glass, by forming a diamond-like coating over the front surface of the glass; performing passive sputtering to form a protective layer directly on the diamond-like coating; performing reactive sputtering to form an adhesion layer directly on the protective layer; forming an anti-finger print layer directly over the adhesion layer.

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Номер записи: 29
28-01-2021 дата публикации

Decorative member

Номер: US20210022475A1
Автор: Jeong Woo SHON, Ki Hwan Kim, Nansra Heo, Pilsung JO, Yong Chan Kim
Принадлежит: LG Chem Ltd

The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (Cu a O x ).

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Номер записи: 30
26-01-2017 дата публикации

Uv light emitting devices and systems and methods for production

Номер: US20170025565A1
Автор: Doug Collins, Robert Walker, Yitao Liao
Принадлежит: RayVio Corp

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

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Номер записи: 31
28-01-2016 дата публикации

UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION

Номер: US20160027962A1
Автор: COLLINS Doug, LIAO Yitao, Walker Robert
Принадлежит:

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures. 1. A method of fabricating an ultraviolet (UV) light emitting device comprising:receiving a UV transmissive substrate; forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and', 'forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and, 'forming a UV transmissive layer upon the UV transmissive substrate, comprising forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer;', 'forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and', 'forming a p-type nitride layer upon the one or more quantum well structures., ' ...

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Номер записи: 32
23-01-2020 дата публикации

METHOD FOR PREPARING HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND THIN FILM FORMING APPARATUS

Номер: US20200026180A1
Автор: INAZUKI Yukio
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties. 1. An apparatus for forming a thin film to constitute a photomask blank , comprisinga substrate to constitute the photomask blank,plural targets,a gas supply for supplying a sputtering gas containing a rare gas and a nitrogen-containing gas, andmeans for causing electric discharge to the plural targets at the same time,wherein the thin film to constitute a photomask blank is formed by rotating the substrate on its axis, sputtering the plural targets, and depositing a thin film on the substrate,the plural targets are disposed such that provided that the rotational axis of the substrate and a vertical line passing the center of a sputter surface of each of the plural targets are parallel and spaced apart a distance, one target has the closest distance between the rotational axis and the vertical line, the distance between the rotational axis and the vertical line of another target is 1 to 3 times the distance between the rotational axis and the vertical line of the one target, and the angle included between normal lines extending from the rotational axis to vertical lines has a maximum value of 70° to 180°.2. The apparatus of wherein at least two normal lines extend from the rotational axis to vertical lines claim 1 , and any of the angles included between adjacent normal lines is in a range of 70° to 180°.3. The apparatus of wherein the plural targets are silicon targets.4. The apparatus of wherein a halftone ...

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Номер записи: 33
23-01-2020 дата публикации

Sputtering device

Номер: US20200027708A1
Автор: Daisuke Matsuo, Shigeaki Kishida
Принадлежит: Nissin Electric Co Ltd

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2 ; target holding parts 4 for holding the targets T inside the vacuum chamber 2 ; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

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Номер записи: 34
02-02-2017 дата публикации

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Номер: US20170029336A1
Автор: Eiichiro Nishimura, Fumihiko Matsumura, Masashi Iwara, Tokuyuki Nakayama
Принадлежит: SUMITOMO METAL MINING CO LTD

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×10 18 cm −3 or lower, and a carrier mobility of 10 cm 2 V −1 sec −1 or higher.

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Номер записи: 35
02-02-2017 дата публикации

Method And System For Producing Coated Steel Components

Номер: US20170029956A1
Автор: Edward Schleichert, Mathias Belzner, Ralph Domnick
Принадлежит: Magna International Inc.

A coated steel component is provided. The coated steel component includes a substrate composed of a steel sheet which can be supplied to a hot-forming process. The coated steel component also possesses a non-metallic coating on the basis of silicon, in a layered structure. The layered structure includes three functional layers having the composition SiOxNyCz, wherein x lies between 30 and 70%, y lies between 0 and 35%, and z lies between 0 and 50%.

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Номер записи: 36
04-02-2016 дата публикации

Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof

Номер: US20160032443A1
Автор: Gu Deen, Jiang Yadong, WANG TAO
Принадлежит:

A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source. 1. A vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance (TCR) containing a rare earth element of Yttrium serving as a dopant in a preparation process.2. The vanadium oxide thermo-sensitive film material with high TCR claim 1 , as recited in claim 1 , comprising a substrate and a yttrium-doped vanadium oxide film layer;wherein the yttrium-doped vanadium oxide film layer is deposited on the substrate;wherein the yttrium-doped vanadium oxide film layer comprises three elements of vanadium, oxygen and yttrium, wherein an atomic percentage content of yttrium atom is at a range of 1%-8%, an atomic percentage content of vanadium is at a range of 20-40%, and a residue is oxygen element.3. The vanadium oxide thermo-sensitive film material with high TCR claim 2 , as recited in claim 2 , wherein the substrate is a silicon wafer with a SiNx film claim 2 , a silicon wafer with SiOfilm claim 2 , K9 glass or AlOsubstrate.4. A method for preparing a vanadium oxide thermo-sensitive film material ...

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Номер записи: 37
01-02-2018 дата публикации

FABRICATION METHOD OF STRONTIUM NIOBIUM OXYNITRIDE FILM HAVING SMALL CARRIER DENSITY AND ITS USE

Номер: US20180030602A1
Автор: Hato Kazuhito, KIKUCHI RYOSUKE, Nakamura Toru
Принадлежит:

The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10cm. The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×10cm, (II) a strontium niobium oxynitride film having carrier density not more than 1×10cm, (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use. 1. A method for growing a strontium niobium oxynitride film , the method comprising:{'sup': 18', '−3, '(a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10cm.'}2. The method according to claim 1 , whereina target used in the sputtering method is formed of strontium niobate; andthe strontium niobium oxynitride film is grown in an atmosphere containing nitrogen.3. The method according to claim 2 , wherein{'sub': 2', '2', '7, 'the strontium niobate is represented by the chemical formula SrNbO.'}4. The method according to claim 2 , whereinthe atmosphere further contains oxygen.5. The method according to claim 2 , whereinthe atmosphere further contains argon.6. The method according to claim 4 , whereinthe atmosphere further contains argon.7. The method according to claim 1 , whereinthe strontium titanate substrate has a single orientation plane; andthe strontium niobium oxynitride film has a single orientation plane.8. The method according to claim 7 , whereinthe single orientation plane of the strontium titanate substrate is an ...

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Номер записи: 38
17-02-2022 дата публикации

IRON NITRIDE MAGNETIC MATERIAL INCLUDING COATED NANOPARTICLES

Номер: US20220051835A1
Автор: Allard, BRADY Michael P., Bridges Craig A., He Shihai, Jiang Yanfeng, JR. Lawrence F., Lara-Curzio Edgar, Meisner Roberta A., RIOS Orlando, Wang Jian-Ping
Принадлежит:

The disclosure describes techniques for forming nanoparticles including FeNphase. In some examples, the nanoparticles may be formed by first forming nanoparticles including iron, nitrogen, and at least one of carbon or boron. The carbon or boron may be incorporated into the nanoparticles such that the iron, nitrogen, and at least one of carbon or boron are mixed. Alternatively, the at least one of carbon or boron may be coated on a surface of a nanoparticle including iron and nitrogen. The nanoparticle including iron, nitrogen, and at least one of carbon or boron then may be annealed to form at least one phase domain including at least one of FeN, Fe(NB), Fe(NC), or Fe(NCB). 1. A nanoparticle comprising:{'sub': ['16', '2'], '#text': 'a core comprising at least one FeNphase domain; and a coating comprising at least one of carbon or boron on the nanoparticle.'}2. The nanoparticle of claim 1 , wherein the coating defines a thickness between about 0.5 nanometers and about 50 nanometers claim 1 , and wherein the nanoparticle comprises a diameter between about 0.5 nm and about 200 nm.3. The nanoparticle of claim 1 , further comprising at least one of a transition metal dopant claim 1 , a rare earth metal dopant claim 1 , or an oxide dopant.4. The nanoparticle of claim 3 , wherein the transition metal dopant is selected from Co claim 3 , Mn claim 3 , Cr claim 3 , Ni claim 3 , Ti claim 3 , La claim 3 , or combinations thereof.5. A bulk magnetic material comprising:a plurality of consolidated nanoparticles, wherein at least one of the plurality of consolidated nanoparticles comprises:{'sub': ['16', '2'], '#text': 'a core comprising at least one FeNphase domain; and'}a coating comprising at least one of carbon or boron formed on the nanoparticle.6. The bulk magnetic material of claim 5 , wherein the coating defines a thickness between about 0.5 nanometers and about 50 nanometers claim 5 , and wherein the nanoparticles comprises diameters between about 0.5 nm and about 200 nm. ...

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Номер записи: 39
09-02-2017 дата публикации

Hard coating film having anti-adhesion property to soft metal

Номер: US20170036258A1
Автор: Kenji Yamamoto
Принадлежит: Kobe Steel Ltd

The invention provides a hard coating film insusceptible to adhesion to a soft metal, the hard coating film being suitable for use as a coating on the surface of, for example, a die in contact with the soft metal. Further, the hard coating film includes a metal element containing at least two species of elements selected from the group consisting of Ti, Al, and Cr, and a non-metal element containing O (oxygen) only, or O and at least one species selected from the group consisting of C and N. A proportion accounting for the O in the total non-metal element is not less than 0.2, in atom ratio.

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Номер записи: 40
04-02-2021 дата публикации

DECORATIVE MEMBER

Номер: US20210033755A1
Автор: Heo Nansra, Jo Pilsung, Kim Ki Hwan, Kim Yong Chan, Shon Jeong Woo
Принадлежит:

The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (CuO). 2. The decorative member of claim 1 , wherein Tis greater than or equal to 0.51 and less than or equal to 1.3. The decorative member of claim 1 , wherein ax is greater than or equal to 0.1 and less than or equal to 3.4. The decorative member of claim 1 , wherein a hue-angle h* in CIE Lch color space of the light absorbing layer is in a range of 105° to 315°.5. The decorative member of claim 1 , wherein the light reflective layer is a single layer or a multilayer including one claim 1 , two or more types of materials selected from the group consisting of one claim 1 , two or more types of materials selected from among indium (In) claim 1 , titanium (Ti) claim 1 , tin (Sn) claim 1 , silicon (Si) claim 1 , germanium (Ge) claim 1 , aluminum (Al) claim 1 , copper (Cu) claim 1 , nickel (Ni) claim 1 , vanadium (V) claim 1 , tungsten (W) claim 1 , tantalum (Ta) claim 1 , molybdenum (Mo) claim 1 , neodymium (Nd) claim 1 , iron (Fe) claim 1 , chromium (Cr) claim 1 , cobalt (Co) claim 1 , gold (Au) and silver (Ag); oxides thereof; nitrides thereof; oxynitrides thereof; carbon and carbon composites.6. The decorative member of claim 1 , wherein the light absorbing layer has a refractive index of 0 to 8 at a wavelength of 400 nm.7. The decorative member of claim 1 , wherein the light absorbing layer has an extinction coefficient of greater than 0 and less than or equal to 4 at a wavelength of 400 nm.8. The decorative member of claim 1 , wherein the light absorbing layer includes two or more points with different thicknesses.9. The decorative member of claim 1 , wherein the color developing layer further includes a color film.10. The decorative member of ...

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Номер записи: 41
07-02-2019 дата публикации

GRAPHITE POT AND MANUFACTURING METHOD THEREOF

Номер: US20190038070A1
Автор: CAO Dahua, LI Hongwei, Li Kang, LI NING, XIAO Beiyang, YANG Ling
Принадлежит:

The present disclosure provides a graphite pot and a manufacturing method thereof. The graphite pot comprises a pot body made of graphite, the pot body comprising an inner wall and an outer wall, and a hard carbon film or a covalent carbide film attached to the surface of the inner wall. A hard carbon film or a covalent carbide film is attached to the surface of the inner wall of the pot body, and the hardness of the hard carbon film and the hardness of the covalent carbide film are both higher than that of the existing PTFE resin film layer, and the carbon film and the covalent carbide film have superior air permeability. When in use, the far infrared characteristic and the adsorption property of the graphite pot body are fully exerted, which is very environment-friendly and healthy. 1. A graphite pot , comprising a pot body made of graphite , the pot body comprising an inner wall and an outer wall , and a hard carbon film attached to at least the inner wall.2. The graphite pot according to claim 1 , wherein a non-stick coating is attached to the surface of the hard carbon film.3. The graphite pot according to claim 1 , wherein a non-stick coating or a hard carbon film is attached to the outer wall.4. The graphite pot according to claim 1 , wherein the thickness of the hard carbon film ranges from 1.0 μm to 50 μm.5. A graphite pot claim 1 , comprising a pot body made of graphite claim 1 , the pot body comprising an inner wall and an outer wall claim 1 , and a covalent carbide film attached to at least the inner wall.6. The graphite pot according to claim 5 , wherein a non-stick coating is attached to the surface of the covalent carbide film.7. The graphite pot according to claim 5 , wherein a non-stick coating or a covalent carbide film is attached to the outer wall.8. The graphite pot according to claim 5 , wherein the thickness of the covalent carbide film ranges from 1.0 μm to 5.0 μm.9. The graphite pot according to claim 5 , wherein the covalent carbide film is ...

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Номер записи: 42
12-02-2015 дата публикации

GOLDEN RIGID DECORATIVE MEMBER

Номер: US20150044453A1
Автор: Takazaki Koutarou
Принадлежит:

A golden rigid decorative member in which scratch resistance and abrasion resistance are significantly improved and deterioration of appearance quality due to a flaw, abrasion, or the like is suppressed, and which has a pale color with a high quality feel is stably provided. A single layer or several layers of a coating including a reaction compound of an alloy of Ti and one or two or more metals selected from Nb, Ta, and V, and of one or two non-metallic elements mainly including nitrogen and selected from carbon and oxygen are stacked on a base. 1. A rigid decorative member comprising:a base; anda rigid decorative coating with a single layer or plural layers containing a reaction compound of an alloy of Ti and one or two or more metals selected from Nb, Ta, and V, and of one or two or more non-metallic elements selected from nitrogen, oxygen, and carbon on the base.2. The rigid decorative member according to claim 1 , wherein the non-metallic element in the coating mainly comprises nitrogen.3. The rigid decorative member according to claim 1 , comprising the rigid decorative coating with the plural layers claim 1 , whereinthe plural rigid decorative coatings comprise an adhesion layer stacked on a substrate, a gradient adhesion layer stacked on the adhesion layer, an abrasion-resistant layer stacked on the gradient adhesion layer, and a golden adjustment gradient layer stacked on the abrasion-resistant layer;a non-metallic element in the adhesion layer is low-concentration oxygen;a non-metallic element in the gradient adhesion layer, the abrasion-resistant layer, and the golden adjustment gradient layer mainly comprises nitrogen and is selectively selected from carbon and oxygen;the content of a non-metallic element in a reaction compound included in the gradient adhesion layer is increased in a gradient manner in a thickness direction with departing from the substrate; andthe content of a non-metallic element in a reaction compound included in the golden ...

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Номер записи: 43
12-02-2015 дата публикации

RIGID DECORATIVE MEMBER

Номер: US20150044508A1
Автор: Takazaki Koutarou
Принадлежит:

Provided is a rigid decorative member that has high film hardness, is excellent in scratch resistance performance and abrasion resistance performance, and has excellent color brightness and color saturation. The rigid decorative member of the present invention is a rigid decorative member wherein a reaction compound film of an alloy of Cr and a metal selected from one or two or more of Mo, W, Nb, Ta, Ti, Hf, Zr, and V, and of a non-metallic element selected from one or two or more of nitrogen, carbon, and oxygen is formed on a substrate. There is provided the rigid decorative member significantly improved in scratch resistance and abrasion resistance and having a color tone with a high quality feel; and there is further supplied a product of which the color tones of brightness and color saturation can be freely controlled. The rigid decorative member of the present invention includes the reaction compound film of the alloy of Cr, which is a metal having high adhesion to a metal and high brightness but having low hardness, and a metal having high film hardness and high corrosion resistance but having low brightness and low adhesion (Mo, W, Nb, Ta, Ti, Hf, Zr, V), and of the non-metallic element such as nitrogen, carbon, or oxygen. 1. A rigid decorative member comprising:a base; anda rigid decorative coating with a single layer or plural layers containing a reaction compound of an alloy of Cr and one or two or more selected from the group consisting of Mo, W, Nb, Ta, Ti, Hf, Zr, and V, and of one or two or more non-metallic elements of nitrogen, carbon, and oxygen, stacked on the base.2. The rigid decorative member according to claim 1 , wherein the non-metallic element in the coating mainly comprises nitrogen.3. The rigid decorative member according to claim 1 , containing the rigid decorative coating with the plural layers claim 1 , whereinthe rigid decorative coating with the several layers comprises an adhesion layer stacked on the substrate, a gradient adhesion ...

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Номер записи: 44
07-02-2019 дата публикации

VANADIUM OXIDE FILMS AND METHODS OF FABRICATING THE SAME

Номер: US20190040526A1
Автор: BHASKARAN Madhu, SRIRAM Sharath, TAHA Mohammad, WALIA Sumeet
Принадлежит:

Method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of: a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VOfilm may be suitable for a broad range of substrates. 1. A method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of:{'sub': 2', '2, 'a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50° C.; and'}{'sub': 2', '2', '2, 'b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition.'}2. The method according to claim 1 , wherein the annealing is performed at a pressure in the range of about 20 Pa to about 50 Pa.3. The method according to claim 2 , wherein the annealing is performed at a pressure in the range of about 30 Pa to about 40 Pa.4. The method according to claim 1 , wherein the substrate temperature is in the range from about 20° C. to about 30° C.5. The method according to claim 4 , wherein the substrate temperature is about room temperature.6. The method according to claim 1 , wherein the inert process gas is argon (Ar).7. The method according to claim 6 , wherein the sputtering gas has an Omolar concentration in Ar in a range from about 20% to about 60%.8. The method according to claim 7 , wherein the sputtering gas has an Omolar concentration in Ar of about 30%.9. The method ...

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Номер записи: 45
18-02-2021 дата публикации

Solar Selective Coating for Mid-High Temperature Solar Thermal Applications

Номер: US20210048228A1
Автор: GOKCEN M. Celal, KAZMANLI M. Kursat, OZBAY Ser-dar S., SECKIN Eren, Urgen Mustafa K.
Принадлежит:

The present invention relates to a solar selective coating for a metal substrate comprising at least one absorber layer and at least one semi-absorber layer selected from the structures of AlTiN and AlTiSiN. In preferred embodiments, the solar selective coating according to the present invention is a double layer coating with AlTiN-AlTiN or AlTiSiN-AlTiSiN formation. The process for producing the coating includes a step of treatment of the metal substrate with a reactive magnetron sputtering system.

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Номер записи: 46
15-02-2018 дата публикации

CONDUCTIVE STRUCTURE, MANUFACTURING METHOD THEREFOR, AND ELECTRODE COMPRISING CONDUCTIVE STRUCTURE

Номер: US20180046017A1
Автор: Hwang Ji Young, Jang Song Ho, Kim Ki-Hwan, Lee Ilha, LEE Seung Heon, Oh Dong Hyun, PARK Chan Hyoung, Park Sun Young, SEO Han Min
Принадлежит:

The present specification relates to a conductive structure body, a method for manufacturing the same, and an electrode and an electronic device including the conductive structure body. 1. A conductive structure body , comprising;a substrate;a metal layer provided on the substrate; anda light reflection reducing layer provided on at least one surface of the metal layer,wherein the light reflection reducing layer includes oxides of Mo and Ti or oxynitrides of Mo and Ti.2. The conductive structure body of claim 1 , wherein the light reflection reducing layer includes MoTiaOxNy (00 claim 1 , a claim 1 , x and y mean ratios of the number of atoms of Ti claim 1 , O and N claim 1 , respectively).4. The conductive structure body of claim 3 , wherein the element content of Mo of the light reflection reducing layer is 25 at % or more and 40 at % or less.5. The conductive structure body of claim 3 , wherein the element content of Ti of the light reflection reducing layer is 10 at % or more and 25 at % or less.6. The conductive structure body of claim 1 , wherein the light reflection reducing layer is provided between the metal layer and the substrate claim 1 , and total reflectance measured in an opposite direction to a surface with the light reflection reducing layer of the substrate is 35% or less.7. The conductive structure body of claim 1 , wherein the substrate claim 1 , the metal layer claim 1 , and the light reflection reducing layer are sequentially provided and total reflectance measured in an opposite direction to a surface with the metal layer of the light reflection reducing layer is 35% or less.8. The conductive structure body of claim 1 , wherein the light reflection reducing layers are provided on an upper surface and a lower surface of the metal layer.9. The conductive structure body of claim 1 , wherein the light reflection reducing layer includes one or more metals of Cu claim 1 , Ag claim 1 , Ar claim 1 , ...

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Номер записи: 47
15-02-2018 дата публикации

METAL STRIP OR SHEET HAVING A CHROMIUM-NITRIDE COATING, BIPOLAR PLATE AND ASSOCIATED MANUFACTURING METHOD

Номер: US20180047998A1
Автор: BERGER Marie-Hélène, CORNIL Hughes, DAMASSE Jean-Michel, GIRARDON Pauline, HENROTTE Olivier, PIMARD Alain, TAHON Sébastien
Принадлежит: APERAM

The present invention relates to a metal strip or sheet comprising a substrate made from stainless steel covered with at least one layer of a chromium-nitride coating. The chromium-nitride coating layer is textured. 1. A metal strip or sheet comprising a substrate made from stainless steel covered with at least one layer of a chromium-nitride based coating wherein the chromium-nitride based coating layer is textured.2. The strip or sheet according to claim 1 , wherein the coating layer has an epitaxial relationship with the substrate.3. The strip or sheet according to claim 1 , wherein the chromium-nitride based coating layer is obtained using a physical vapor deposition method.4. The strip or sheet according claim 1 , wherein the chromium-nitride based coating layer is formed directly on the stainless steel substrate without interposition of a passive layer.5. The strip or sheet according to claim 1 , wherein the substrate has a thickness comprised between 75 micrometers and 200 micrometers.6. The strip or sheet according to claim 1 , wherein the grains of the substrate have a size strictly smaller than 50 micrometers.7. The strip or sheet according to claim 1 , wherein the coating layer has a columnar structure.8. The strip or sheet according to claim 1 , wherein the coating layer optionally comprises oxygen claim 1 , said coating layer being obtained by physical vapor deposition (PVD) claim 1 , characterized in that the coating layer has claim 1 , on its surface claim 1 , a surface zone comprising an atomic oxygen content strictly lower than its atomic nitrogen content.9. The metal strip or sheet according to claim 8 , wherein the surface zone has a height smaller than or equal to 15% of the total thickness of the coating layer.101. The metal strip (′) or sheet according to one of claims 8 , wherein the coating layer comprises claims 8 , at the interface with the substrate claims 8 , an interface zone comprising an atomic oxygen content strictly lower than its ...

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Номер записи: 48
03-03-2022 дата публикации

LIGHT CONTROL FILM AND MANUFACTURING METHOD THEREOF

Номер: US20220066273A1
Автор: Fujino Nozomi, Sugino Akiko, WATANABE Kenta, Yamada Yasusei, Yonezawa Hideyuki, YOSHIMURA Kazuki
Принадлежит:

A light-modulation film () includes a light-modulation layer () and a catalyst layer () in this order on a polymer film substrate (). A surface layer () may be disposed on the catalyst layer. The state of the light-modulation layer reversibly changes between a transparent state due to hydrogenation and a reflective state due to dehydrogenation. The catalyst layer promotes hydrogenation and dehydrogenation of the light-modulation layer. An arithmetic mean roughness of the surface of the catalyst layer is preferably 16 nm or less. A thickness of the light-modulation layer is preferably 2 to 20 times the thickness of the catalyst layer.

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Номер записи: 49
25-02-2016 дата публикации

Hard decorative member having gray-tone layer

Номер: US20160053360A1
Автор: Kotaro Takazaki
Принадлежит: Citizen Holdings Co Ltd, Citizen Watch Co Ltd

Provided is a hard decorative member excellent in scratch resistance. The hard decorative member according to the present invention includes a base and a hard decorative coating film layered on the base, in which the hard decorative coating film includes a gray-tone layer including a compound formed by a reaction of an alloy of Ti and one or two or more metals M2 selected from Nb, Ta, and V with a non-metallic element including at least carbon. It is preferable that the amount of carbon contained in the gray-tone layer is 30 to 70 atm % in a total of Ti, the metal M2, and the non-metallic element of 100 atm %.

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Номер записи: 50
03-03-2022 дата публикации

Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate

Номер: US20220068610A1
Автор: Adrian Herde, Edmund SCHÜNGEL, Silvio Gees
Принадлежит: EVATEC AG

In a vacuum treatment recipient, a plasma is generated between a first plasma electrode and a second plasma electrode so as to perform a vacuum plasma treatment of a substrate. To minimize at least one of the two plasma electrodes to be buried by a deposition of material resulting from the treatment process, that electrode is provided with a surface pattern of areas which do not contribute to the plasma electrode effect and of areas which are plasma electrode effective. The current path between the two electrodes is concentrated on the distinct areas which are plasma electrode effective, leading to an ongoing sputter- cleaning of these areas.

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Номер записи: 51
03-03-2016 дата публикации

Translucent substrate, organic led element and method of manufacturing translucent substrate

Номер: US20160060162A1
Автор: Kazunobu Maeshige, Mamoru Isobe, Masahiro Kishi, Naoto Kihara, Nobuhiro Nakamura, Takahiro Mashimo, Teruo Fujiwara
Принадлежит: Asahi Glass Co Ltd

A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.

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Номер записи: 52
05-03-2015 дата публикации

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

Номер: US20150061820A1
Автор: Fujita Toshiaki, Nagatomo Noriaki, Tanaka Hiroshi
Принадлежит:

Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. 1. A metal nitride material for a thermistor , consisting of a metal nitride represented by the general formula: (MA)AlN(where “M” represents at least one element selected from Ti , V , Cr , Mn , Fe , and Co , “A” represents at least one element selected from Mn , Cu , Ni , Fe , and Co , which is different from the selected “M” , 0.0 Подробнее

Номер записи: 53
05-03-2015 дата публикации

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

Номер: US20150061821A1
Автор: Fujita Toshiaki, Nagatomo Noriaki, Tanaka Hiroshi
Принадлежит:

Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. 1. A metal nitride material for a thermistor , consisting of a metal nitride represented by the general formula: (MA)Al(NO)(where “M” represents at least one element selected from Ti , V , Cr , Mn , Fe , and Co , “A” represents at least one element selected from Mn , Cu , Ni , Fe , and Co , which is different from the selected “M” , 0.0 Подробнее

Номер записи: 54
01-03-2018 дата публикации

SOLAR SELECTIVE ABSORBING COATING AND PREPARATION METHOD THEREOF

Номер: US20180058726A1
Автор: Liu Jing, Sun Zhiqiang, WANG Hong, YANG Zhongzhou
Принадлежит: CHINA BUILDING MATERIALS ACADEMY

The invention relates to a solar selective absorbing coating and a preparation method thereof. The solar selective absorbing coating comprises a substrate, an infrared reflective layer, an absorbing layer and an antireflective layer in sequence from bottom to surface. The absorbing layer consists of a first sublayer, a second sublayer and a third sublayer. The first sublayer and the second sublayer contain metal nitride, and the third sublayer is metal oxynitride. The first sublayer is in contact with the infrared reflective layer, and the third sublayer is in contact with the antireflective layer. The preparation method comprises: depositing an infrared reflective layer on a substrate; depositing an absorbing layer on the infrared reflective layer; and depositing the antireflective layer on the absorbing layer. According to the metal nitride (oxynitride) solar selective absorbing coating, the working temperature of the metal nitride (oxynitride) solar selective absorbing coating is increased, the preparation is simple, and the coating is suitable for large-scale production. 1. A solar selective absorbing coating , comprising:a substrate, an infrared reflective layer, an absorbing layer and an antireflective layer in sequence from bottom to surface; whereinthe absorbing layer comprises a first sublayer, a second sublayer and a third sublayer, the first sublayer and the second sublayer contain metal nitride, and the third sublayer is metal oxynitride; andthe first sublayer is in contact with the infrared reflective layer, and the third sublayer is in contact with the antireflective layer.2. The solar selective absorbing coating of claim 1 , wherein claim 1 ,the first sublayer is metal nitride with incomplete nitridation, the second sublayer is metal nitride, and the third sublayer is metal oxynitride.3. The solar selective absorbing coating of claim 2 , wherein claim 2 ,{'sub': 'x', 'the first sublayer is CrN, wherein 0 Подробнее

Номер записи: 55
01-03-2018 дата публикации

METHOD FOR PREPARING HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND THIN FILM FORMING APPARATUS

Номер: US20180059532A1
Автор: INAZUKI Yukio
Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon is prepared through the step of depositing the halftone phase shift film on the substrate by using a sputtering gas containing rare gas and nitrogen gas, and plural targets including at least two silicon targets, applying powers of different values to the silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction. The halftone phase shift film has satisfactory in-plane uniformity of optical properties. 1. A method for preparing a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon , the halftone phase shift film being composed mainly of silicon and nitrogen , consisting of a single layer whose composition is kept constant or continuously graded in thickness direction , or two layers including the single layer and a surface oxidized layer disposed on a side of the single layer remote from the substrate , providing a phase shift relative to the wavelength of ArF excimer laser , the phase shift having a median in film plane of 180±30° and a difference between maximum and minimum in film plane of up to 2° , and having a transmittance relative to the wavelength of ArF excimer laser , the transmittance having a median in film plane of 3 to 17% and a difference between maximum and minimum in film plane of up to 0.2% ,said method comprising the step of depositing the halftone phase shift film on a surface of the substrate by using a sputtering gas containing a rare gas and a nitrogen-containing gas, and plural targets including at least two silicon targets, applying powers of at least two different values to the at least two silicon targets, effecting reactive sputtering, and rotating the substrate on its axis in a horizontal direction.2. The method of wherein the deposition step includes reactive sputtering in transition mode so that the halftone phase shift ...

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Номер записи: 56
21-02-2019 дата публикации

CEM SWITCHING DEVICE

Номер: US20190058118A1
Автор: Celinska Jolanta Bozena, Paz de Araujo Carlos Alberto, Reid Kimberly Gay, Shifren Lucian
Принадлежит: ARM LIMITED

Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device. 1. A method for the manufacture of a CEM switching device , which method comprises forming a conductive substrate and forming a layer of a correlated electron material (CEM) on the conductive substrate , wherein the forming of the conductive substrate comprises forming a primary layer of a conductive material and forming a secondary layer of a conductive material such that the primary layer contacts the CEM layer and wherein the forming of the conductive material of the primary layer is substantially resistant to diffusion or migration of oxygen ion from the CEM layer to the secondary layer.2. The method according to claim 1 , wherein the method further comprises forming a conductive overlay on the CEM layer claim 1 , the conductive overlay being a single layer of a conductive material which is resistant to diffusion or migration of oxygen ion.3. The method according to claim 1 , wherein the primary layer of the conductive substrate is more resistant to etching as compared to the CEM layer.4. The method according to claim 1 , wherein the work function of the primary layer is matched with that of the CEM layer.5. The method according to claim 1 , wherein the forming of the primary layer comprises forming a plurality of sub-layers of different noble metals and/or noble metal oxides.6. The method according to claim 1 , wherein the forming of the primary layer comprises forming monolayers comprising more than one noble metal and/or noble metal oxide.7. The method according to claim 1 , wherein the conductive ...

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Номер записи: 57
02-03-2017 дата публикации

Halftone phase shift photomask blank, making method, and halftone phase shift photomask

Номер: US20170059983A1
Автор: Takuro Kosaka
Принадлежит: Shin Etsu Chemical Co Ltd

A halftone phase shift photomask blank is provided comprising a transparent substrate and a halftone phase shift film thereon having a phase shift of 150-200° and a transmittance of 9-40%. The halftone phase shift film consists of a transition metal, Si, O and N, has an average transition metal content of at least 3 at %, and is composed of a plurality of layers including a stress relaxation layer having an oxygen content of at least 3 at % and a phase shift adjusting layer having a higher oxygen content of at least 5 at %.

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Номер записи: 58
27-02-2020 дата публикации

DECORATION MEMBER AND MANUFACTURING METHOD THEREFOR

Номер: US20200062027A1
Автор: Hwang Ji Young, Jang Song Ho, Jo Pilsung, Kim Ki Hwan, Kim Yong Chan, SEO Han Min, Shon Jeong Woo, SONG Jin Suk
Принадлежит:

The present disclosure relates to a decoration element comprising a light reflective layer; and a color developing layer comprising a light absorbing layer provided on the light reflective layer, wherein the light absorbing layer comprises two or more points with different thicknesses. 1. A decoration element comprising:a light reflective layer; anda color developing layer comprising a light absorbing layer provided on the light reflective layer,wherein the light absorbing layer comprises two or more points with different thicknesses.2. The decoration element of claim 1 , wherein the light absorbing layer comprises two or more regions with different thicknesses.3. The decoration element of claim 1 , wherein the light absorbing layer comprises one or more regions in which an upper surface has an inclined surface with an inclined angle of greater than 0 degrees and less than or equal to 90 degrees claim 1 , and the light absorbing layer comprises one or more regions having a thickness different from a thickness in any one region having the inclined surface.4. The decoration element of claim 1 , wherein the light absorbing layer comprises one or more regions with a gradually changing thickness.5. The decoration element of claim 1 , wherein the light absorbing layer comprises one or more regions in which an upper surface has an inclined surface with an inclined angle of greater than 0 degrees and less than or equal to 90 degrees claim 1 , and at least one region having the inclined surface has a structure in which a thickness of the light absorbing layer gradually changes.6. The decoration element of claim 1 , wherein the light absorbing layer has dichroism of ΔE*ab>1.7. The decoration element of claim 1 , wherein an upper surface of the light absorbing layer comprises a pattern having a cone-shaped protrusion or groove claim 1 , a pattern having a protrusion in which the highest point has a line shape or a groove in which the lowest point has a line shape claim 1 , or ...

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Номер записи: 59
29-05-2014 дата публикации

METHOD OF FABRICATING ZINC OXIDE THIN FILM

Номер: US20140144770A1
Автор: Kim Seo Hyun, Lee Hyunhee, Yoo Young Zo, Yoon Gun Sang
Принадлежит: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.

A method of fabricating a zinc oxide (ZnO) thin film in which the surface shape of the ZnO thin film can be controlled during deposition of the ZnO thin film. The method includes depositing the ZnO thin film on a substrate by chemical vapor deposition (CVD). The CVD feeds an etching gas that etches the ZnO thin film concurrently with a source gas and an oxidizer gas, thereby controlling the surface shape of the ZnO thin film that is being deposited. 1. A method of fabricating a zinc oxide thin film comprising depositing a zinc oxide thin film on a substrate by chemical vapor deposition , wherein the chemical vapor deposition comprises feeding an etching gas that etches the zinc oxide thin film concurrently with a source gas and an oxidizer gas , thereby controlling a surface shape of the zinc oxide thin film that is being deposited.2. The method of claim 1 , wherein the source gas comprises a mixture of diethylzinc (DEZn) and a hydrocarbon-based solvent claim 1 , and the oxidizer gas comprises HO.3. The method of claim 2 , wherein the source gas is fed at 1.0 to 9.0 g/min and the oxidizer gas is fed at 0.5 to 5.0 g/min.4. The method of claim 1 , wherein a flow rate of the etching gas is controlled in a range from 1 to 50 sccm.5. The method of claim 1 , wherein the etching gas comprises one selected from the group of fluorine-containing gases consisting of CF claim 1 , CF claim 1 , CF claim 1 , CFand NF.6. The method of claim 1 , further comprising preheating the source gas and the oxidizer gas before feeding the source gas and the oxidizer gas into a process chamber where the chemical vapor deposition is carried out.7. The method of claim 1 , wherein the source gas and the oxidizer gas is fed along different paths into a process chamber where the chemical vapor deposition is carried out.8. The method of claim 7 , wherein each of the source gas and the oxidizer gas is carried into the process chamber on a carrier gas that comprises an inert gas.9. The method of claim ...

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Номер записи: 60
10-03-2016 дата публикации

SPUTTERING TARGET OF MULTI-COMPONENT SINGLE BODY AND METHOD FOR PREPARATION THEREOF, AND METHOD FOR PRODUCING MULTI-COMPONENT ALLOY-BASED NANOSTRUCTURED THIN FILMS USING SAME

Номер: US20160068943A1
Автор: Bae Jung Chan, Lee Chang Hun, MOON Kyoung Il, Shin Seung Yong, Sun Ju Hyun
Принадлежит: Korea Institute of Industrial Technology

The present invention relates to a sputtering target of a multi-component single body, a preparation method thereof, and a method for fabricating a multi-component alloy-based nanostructured thin film using the same. The sputtering target according to the present invention comprises an amorphous or partially crystallized glass-forming alloy system composed of a nitride forming metal element, which is capable of reacting with nitrogen to form a nitride, and a non-nitride forming element which has no or low solid solubility in the nitride forming metal element and does not react with nitrogen or has low reactivity with nitrogen, wherein the nitrogen forming metal element comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Y, Mo, W, Al, and Si, and the non-nitride forming element comprises at least one element selected from Mg, Ca, Sc, Ni, Cu, Ag, In, Sn, La, Au, and Pb. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. A method for preparing a sputtering target of a multi-component single body , the method comprising forming an amorphous or partially crystallized glass-forming alloy system from a nitride forming metal element and a non-nitride forming element which has no or low solid solubility in the nitride forming metal element and does not react with nitrogen or has low reactivity with nitrogen , wherein the nitrogen forming metal element comprises at least one element selected from Ti , Zr , Hf , V , Nb , Ta , Cr , Y , Mo , W , Al , and Si , and the non-nitride forming element comprises at least one element selected from Mg , Ca , Sc , Ni , Cu , Ag , In , Sn , La , Au , and Pb.7. The method of claim 6 , wherein the nitride forming metal element is contained at an atomic ratio of 40-80 at %.8. The method of claim 7 , wherein the nitride forming metal element is contained at an atomic ratio of 60-80 at %.9. The method of claim 6 , wherein the sputtering target comprises at least one low-melting-point oxide forming element ...

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Номер записи: 61
10-03-2016 дата публикации

LIGHT-ABSORBING LAYER AND LAYER SYSTEM CONTAINING THE LAYER, METHOD FOR PRODUCING THE LAYER SYSTEM AND A SPUTTER TARGET SUITED THEREFOR

Номер: US20160070033A1
Автор: KAHLE Ben, Kastner Albert, LEE Suk-Jae, SCHLOTT Martin, SCHULTHEIS Markus, Wagner Jens
Принадлежит:

A light-absorbing layer system includes an absorber layer having an oxidic matrix. The oxidic matrix is based on a base component made of zinc oxide, tin oxide and/or indium oxide, and on an added component which can replace the base component K1 up to a fraction of 75% by weight. The added component consists of niobium oxide, hafnium oxide, titanium oxide, tantalum oxide, vanadium oxide, yttrium oxide, zirconium oxide, aluminum oxide and/or mixtures thereof. A blackening component, made of molybdenum, tungsten and alloys and mixtures thereof, is distributed in the matrix and is present either as metal or as substoichiometric-oxidic compound of the metal, such that the layer material has a degree of reduction which is defined by an oxygen content of at most 65% of the stoichiometrically maximum oxygen content. The weight fraction of the blackening component is in the range between 20 and 50% by weight. 124-. (canceled)25. A light-absorbing layer having , at a wavelength of 550 nm , an absorption index kappa of more than 0.7 , the light-absorbing layer being made from a layer material comprising:an oxidic matrix based on a base component K1 selected from the group consisting of zinc oxide, tin oxide and indium oxide, and on an added component K3 which replaces the base component K1 up to a fraction y between 0 and 75% by weight, the added component K3 being selected from the group consisting of niobium oxide, hafnium oxide, titanium oxide, tantalum oxide, vanadium oxide, yttrium oxide, zirconium oxide, aluminum oxide and mixtures thereof; anda blackening component K2 selected from the group consisting of molybdenum, tungsten and alloys and mixtures thereof, the blackening component K2 being distributed in the oxidic matrix and being present either as (i) a metal or (ii) a substoichiometric-oxidic or a substoichiometric-oxynitride compound of the metal, such that the layer material has a degree of reduction which is defined by an oxygen content of not more than 65% of ...

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Номер записи: 62
09-03-2017 дата публикации

TRANSPARENT HEAT-SHIELDING/HEAT-INSULATING MEMBER AND PRODUCTION METHOD THEREOF

Номер: US20170067593A1
Автор: Mitsumoto Yoshimasa, MIYATA Teruhisa
Принадлежит: HITACHI MAXELL, LTD.

A transparent heat-shielding/heat-insulating member according to the present invention includes a transparent substrate and a functional layer formed on the transparent substrate . The functional layer includes, from the transparent substrate side, an infrared reflective layer and a protective layer in this order. The infrared reflective layer includes, from the transparent substrate side, at least a metal layer and a metal suboxide layer in which a metal is partially oxidized, in this order. The protective layer has a total thickness of 200 to 980 nm and includes, from the infrared reflective layer side, at least a high refractive index layer and a low refractive index layer in this order. 1. A transparent heat-shielding/heat-insulating member comprising a transparent substrate and a functional layer formed on the transparent substrate ,wherein the functional layer includes, from the transparent substrate side, an infrared reflective layer and a protective layer in this order,the infrared reflective layer includes, from the transparent substrate side, at least a metal layer, and a metal suboxide layer in which a metal is partially oxidized, in this order,the protective layer has a total thickness of 200 to 980 nm, and includes, from the infrared reflective layer side, at least a high refractive index layer and a low refractive index layer in this order.2. The transparent heat-shielding/heat-insulating member according to claim 1 ,wherein the metal suboxide layer in which a metal is partially oxidized has a thickness of 1 to 8 nm.3. The transparent heat-shielding/heat-insulating member according to claim 1 ,wherein the protective layer includes, from the infrared reflective layer side, a medium refractive index layer, a high refractive index layer and a low refractive index layer in this order.4. The transparent heat-shielding/heat-insulating member according to claim 1 ,wherein the protective layer includes, from the infrared reflective layer side, an optical ...

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Номер записи: 63
27-02-2020 дата публикации

Antireflection Hard Coating Film and Preparation Method Thereof

Номер: US20200064518A1
Автор: Byoung Sun Ko, Ho Chul Yoon, Jin Su Park, Jong Nam Ahn, Tae Sug Jang
Принадлежит: SK IE Technology Co Ltd, SK Innovation Co Ltd

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a high refractive index layer, and a low refractive index layer are laminated on a substrate, the film having suppressed curling, and excellent hardness and antireflection performance.

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Номер записи: 64
27-02-2020 дата публикации

Antireflection Hard Coating Film and Preparation Method Thereof

Номер: US20200064519A1
Автор: Ahn Jong Nam, Jang Tae Sug, Ko Byoung Sun, PARK Jin Su, Yoon Ho Chul
Принадлежит:

Provided is a hard coating film in which a hard coating layer having a water contact angle of 90° or less, a conductive layer, and a low refractive index layer are laminated on a substrate, the film having excellent hardness, anti-curling property, antireflection performance, antifouling performance, and antistatic performance. 1. An antireflection hard coating film comprising:a substrate;a hard coating layer having a water contact angle of 90° or less, disposed on the substrate;a conductive layer disposed on the hard coating layer; anda low refractive index layer disposed on the conductive layer.3. The antireflection hard coating film of claim 2 , wherein the hard coating layer is a cured layer of a composition for forming a hard coating layer including the epoxy siloxane resin claim 2 , the thermal initiator including the compound represented by Chemical Formula 2 claim 2 , and the photoinitiator.4. The antireflection hard coating film of claim 3 , wherein the cured layer is formed by photocuring and then thermally curing the composition for forming a hard coating layer.6. The antireflection hard coating film of claim 1 , wherein the conductive layer includes a conductive metal oxide or a conductive metal nitride.7. The antireflection hard coating film of claim 6 , wherein the conductive metal oxide or the conductive metal nitride includes any one or more selected from the group consisting of an aluminum (Al) oxide doped with any one or more selected from the group consisting of phosphorus (P) claim 6 , indium (In) claim 6 , and antimony (Sb); a titanium (Ti) oxide doped with any one or more selected from the group consisting of phosphorus claim 6 , indium claim 6 , and antimony; and an antimony oxide doped with any one or more selected from the group consisting of phosphorus and indium.8. The antireflection hard coating film of claim 1 , wherein the low refractive index layer includes an inorganic oxide.9. The antireflection hard coating film of claim 8 , wherein ...

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Номер записи: 65
17-03-2022 дата публикации

Deposition Method

Номер: US20220085275A1
Автор: Haymore Scott, Thomas Adrian, Wilby Tony
Принадлежит:

Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target. 1. A method of sputter depositing an additive-containing aluminium nitride film from a target , the method comprising the steps of:providing a semiconductor substrate having a metallic layer thereon in a chamber; anddepositing the additive-containing aluminium nitride film onto the metallic layer by pulsed DC reactive sputtering of the target, wherein the additive-containing aluminium nitride film includes an additive element, and wherein the additive element includes at least one of scandium (Sc), yttrium (Y), titanium (Ti), chromium (Cr), magnesium (Mg) or hafnium (Hf);wherein the step of depositing the additive-containing aluminium nitride film comprises introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate in sccm, in which the flow rate of the gaseous mixture in sccm comprises a nitrogen gas flow rate in sccm, and in which the nitrogen gas flow rate in sccm is less than or equal to about 50% of the flow rate of the gaseous mixture in sccm and also is sufficient to fully poison the target.2. The method according to claim 1 , wherein the additive element is scandium or yttrium.3. The method according to claim 2 , wherein the additive element is scandium.4. The method according to claim 1 , wherein the ...

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Номер записи: 66
11-03-2021 дата публикации

DECORATION MEMBER

Номер: US20210072441A1
Автор: Heo Nansra, Jo Pilsung, Kim Ki Hwan, Kim Yong Chan, Shon Jeong Woo, SONG Jin Suk
Принадлежит:

A decoration member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer. The light absorbing layer includes a copper oxynitride (CuON). 2. The decoration member of claim 1 , wherein Tx is greater than or equal to 0.51 and less than or equal to 1.3. The decoration member of claim 1 , wherein σis greater than or equal to 1.1 and less than or equal to 1.9.4. The decoration member of claim 1 , wherein a hue-angle h* in CIE LCh color space of the light absorbing layer is in a range of 105° to 315°.5. The decoration member of claim 1 , wherein the light reflective layer is a single layer or a multilayer comprising one or more materials selected from the group consisting of indium (In) claim 1 , titanium (Ti) claim 1 , tin (Sn) claim 1 , silicon (Si) claim 1 , germanium (Ge) claim 1 , aluminum (Al) claim 1 , copper (Cu) claim 1 , nickel (Ni) claim 1 , vanadium (V) claim 1 , tungsten (W) claim 1 , tantalum (Ta) claim 1 , molybdenum (Mo) claim 1 , neodymium (Nd) claim 1 , iron (Fe) claim 1 , chromium (Cr) claim 1 , cobalt (Co) claim 1 , gold (Au) claim 1 , silver (Ag) claim 1 , oxides thereof claim 1 , nitrides thereof claim 1 , oxynitrides thereof claim 1 , carbon and carbon composites.6. The decoration member of claim 1 , wherein the light absorbing layer has a refractive index of 0 to 8 at a wavelength of 400 nm.7. The decoration member of claim 1 , wherein the light absorbing layer has an extinction coefficient of greater than 0 and less than or equal to 4 at a wavelength of 400 nm.8. The decoration member of claim 1 , wherein the light absorbing layer includes two or more points with different thicknesses.9. The decoration member of claim 1 , wherein the color developing layer further comprises a color film.10. The decoration member of claim 1 , wherein the substrate comprises a pattern layer claim 1 , and the ...

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Номер записи: 67
27-02-2020 дата публикации

MEMRISTOR ELECTRODE MATERIAL PREPARATION METHOD AND APPARATUS, AND MEMRISTOR ELECTRODE MATERIAL

Номер: US20200066974A1
Автор: Shen Jian, YAO Guofeng
Принадлежит:

Embodiments of the present application provide a memristor electrode material preparation method and apparatus, and a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride substrate; and subjecting the metal nitride substrate to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, so as to obtain a memristor electrode material. 1. A memristor electrode material preparation method , comprising:depositing a metal nitride on a substrate by a reactive sputtering process or by a plasma enhanced atomic layer deposition process to obtain a metal nitride substrate; andsubjecting the metal nitride substrate obtained by the reactive sputtering process to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, or subjecting the metal nitride substrate obtained by the plasma enhanced atomic layer deposition process to laser annealing treatment under vacuum, to obtain a memristor electrode material used for preparing electrodes of memristors of a resistive memory.2. The preparation method according to claim 1 , wherein an energy parameter of laser used in the laser annealing enables energy generated by the laser to be greater than or equal to energy required for a metal nitridation reaction claim 1 , and to be less than energy required to cause material damage to the metal nitride.3. The preparation method according to claim 1 , wherein the method further comprises:cleaning and drying the metal nitride substrate subjected to the laser annealing treatment.4. The preparation method according to claim 1 , wherein the substrate is a silicon wafer.5. The preparation method according to claim 4 , wherein the silicon wafer comprises a specific circuit structure for controlling switching of a resistance state of the memristor of the resistive ...

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Номер записи: 68
15-03-2018 дата публикации

Substrate processing apparatus and method for manufacturing semiconductor device using the same

Номер: US20180073131A1
Автор: Joon-Myoung Lee, Se-Chung Oh, Whan-kyun KIM, Yong-sung Park, Young-man Jang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

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Номер записи: 69
18-03-2021 дата публикации

PIEZOELECTRIC BULK LAYERS WITH TILTED C-AXIS ORIENTATION AND METHODS FOR MAKING THE SAME

Номер: US20210079515A1
Автор: Belsick John, DENIZ Derya, Kraft Robert, Wasilik Matthew
Принадлежит:

A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt. 1. A structure comprising:a substrate comprising a wafer or a portion thereof;a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less.2. The structure of claim 1 , wherein the outer surface has a surface roughness (Ra) of 4 nm or less.3. The structure of claim 1 , wherein the structure further comprises a bump disposed at least partially on the bulk material layer claim 1 , the bump being able to withstand shear forces of 120 g or greater.4. The structure of claim 1 , wherein the structure further comprises a bump disposed at least partially on the bulk material layer claim 1 , the bump being able to withstand shear forces of 125 g or greater.5. The structure of claim 1 , wherein the first portion has a first c-axis tilt and the second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.6. The structure of claim 5 , wherein the first c-axis tilt is about 35 degrees to about 52 degrees.7. The structure of claim 1 , wherein the first portion has a first bulk grain orientation and the second portion has ...

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Номер записи: 70
18-03-2021 дата публикации

DECORATIVE MEMBER

Номер: US20210080622A1
Автор: Heo Nansra, Jo Pilsung, Kim Ki Hwan, Kim Yong Chan, Shon Jeong Woo, SONG Jin Suk
Принадлежит:

A decorative member including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on a surface of the color developing layer. The substrate comprises a pattern layer, and the light absorbing layer comprises silicon (Si). 2. The decorative member of claim 1 , wherein Tx is greater than 0.5 and less than or equal to 1.3. The decorative member of claim 1 , wherein Ty is greater than 1.0 and less than or equal to 1.4.4. The decorative member of claim 1 , wherein a hue-angle h* in CIE LCh color space of the light absorbing layer is in a range of 315° to 360° and 0° to 150°.5. The decorative member of claim 1 , wherein the light reflective layer is a single layer or a multilayer including one or more materials selected from the group consisting of indium (In) claim 1 , titanium (Ti) claim 1 , tin (Sn) claim 1 , silicon (Si) claim 1 , germanium (Ge) claim 1 , aluminum (Al) claim 1 , copper (Cu) claim 1 , nickel (Ni) claim 1 , vanadium (V) claim 1 , tungsten (W) claim 1 , tantalum (Ta) claim 1 , molybdenum (Mo) claim 1 , neodymium (Nd) claim 1 , iron (Fe) claim 1 , chromium (Cr) claim 1 , cobalt (Co) claim 1 , gold (Au) claim 1 , silver (Ag) claim 1 , oxides thereof claim 1 , nitrides thereof claim 1 , oxynitrides thereof claim 1 , carbon and carbon composites.6. The decorative member of claim 1 , wherein the light absorbing layer has a refractive index of 0 to 8 at a wavelength of 400 nm.7. The decorative member of claim 1 , wherein the light absorbing layer has an extinction coefficient greater than 0 and less than or equal to 4 at a wavelength of 400 nm.8. The decorative member of claim 1 , wherein the light absorbing layer includes two or more points with different thicknesses.9. The decorative member of claim 1 , wherein the color developing layer further comprises a color film.10. The decorative member of claim 1 , wherein the pattern layer of the substrate is ...

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Номер записи: 71
23-03-2017 дата публикации

Transparent conductive film and method for producing same

Номер: US20170081754A1
Автор: Hironori Hayakawa, Takashi Kuchiyama
Принадлежит: Kaneka Corp

A transparent electroconductive film includes transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy E Sn of tin 3d 5/2 and a bond energy E In of indium 3d 5/2 as determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies E Sn and E In is present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference E Sn -E In ; and a difference E max -E min between the maximum value E max and the minimum value E min of the bond energy difference is 0.1 eV or more.

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Номер записи: 72
12-03-2020 дата публикации

LOW EMISSIVITY COATINGS, GLASS SURFACES INCLUDING THE SAME, AND METHODS FOR MAKING THE SAME

Номер: US20200079688A1
Автор: Boyum Henry Lynn, Stull Randy Leland
Принадлежит:

A substrate having a coating is disclosed. The coating is formed of a plurality of layers. A base layer of the plurality of layers includes an alloy, and at least two additional layers include silver. A coating for a substrate is also disclosed. A method of coating a substrate is further disclosed. 1. An insulating glass unit comprising:a first pane of glass;a second pane of glass;a sealing element disposed between the first pane of glass and the second pane of glass, wherein the sealing element seals around a plurality of peripheral edges of the first pane of glass and the second pane of glass to form a chamber therebetween; anda coating applied to one or more of the first pane of glass or the second pane of glass, the coating comprising a plurality of layers, wherein a base layer of the plurality of layers is disposed directly on the first pane of glass or the second pane of glass and includes a nickel-chromium-molybdenum alloy and wherein two additional layers of the coating include silver.2. The insulating glass unit of claim 1 , wherein the nickel-chromium-molybdenum alloy comprises nickel claim 1 , chromium claim 1 , molybdenum claim 1 , one or more of niobium or tantalum claim 1 , and iron.3. The insulating glass unit of claim 1 , wherein the nickel-chromium-molybdenum alloy comprises at least about 58 weight % nickel claim 1 , about 20 weight % to 23 weight % chromium claim 1 , about 8 weight % to 10 weight % molybdenum claim 1 , about 3.15 weight % to 4.15 weight % of one or more of niobium or tantalum claim 1 , and less than about 5 weight % iron.5. The insulating glass unit of claim 1 , wherein the plurality of layers comprises claim 1 , from the one or more of the first pane of glass or the second pane of glass outwardly:the base layer having a thickness of between about 20 Å and about 50 Å;a first metal layer including silver and having a thickness ranging from about 140 Å to about 180 Å;a first barrier layer having a thickness ranging from about 20 Å ...

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Номер записи: 73
25-03-2021 дата публикации

FILM FORMING APPARATUS AND FILM FORMING METHOD

Номер: US20210087669A1
Автор: GAWASE Akifumi, Iwasaki Takeshi, KITAO Ryohei, KONNO Yuta, Nagase Toshihiko, Nagata Kohei, Sakata Atsuko
Принадлежит: Kioxia Corporation

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas. 1. A film forming apparatus comprising:a process chamber forming a film on a substrate;an abatement device detoxifying a first exhaust gas exhausted from the process chamber;a first supply pipe supplying a gas containing water to the process chamber;a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device;a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; anda first detector provided in the first flow path between the second vacuum pump and the abatement device, the first detector detecting a hydrogenated gas.2. The film forming apparatus according to claim 1 , further comprising:a housing surrounding the first detector; anda second detector provided in a second flow path of a second exhaust gas exhausted from the housing, the second detector detecting a hydrogenated gas.3. The film forming apparatus according to claim 2 , wherein the second flow path is connected to the abatement device.4. The film forming apparatus according to claim 1 , further comprising a second supply pipe supplying a nitrogen gas to the process chamber.5. The film forming apparatus according to claim 1 , wherein the process chamber includes a holder holding a target claim 1 , and the target is a raw ...

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Номер записи: 74
31-03-2022 дата публикации

Silicide passivation of niobium

Номер: US20220102614A1
Автор: Copel Matthew W., Hannon James B., Pyzyna Adam M.
Принадлежит:

A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSi) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSipassivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use. 1. A superconducting device , comprising:a substrate;a plurality of niobium leads formed on said substrate;{'sub': 'x', 'a niobium silicide (NbSi) passivation layer formed on a surface of at least one of said plurality of niobium leads, wherein x is in a range from 0.5 to 2; and'}{'sub': 'x', 'an aluminum lead formed directly on at least a portion of said NbSipassivation layer such that an interface therebetween is substantially free of oxygen and oxidized material,'}wherein said plurality of niobium leads and said aluminum lead are constructed to carry a supercurrent while in use.2. The superconducting device of claim 1 , further comprising:{'sub': 'x', 'a second aluminum lead formed directly on at least a portion of a NbSipassivation layer formed on a surface of a second one of said plurality of niobium leads such that an interface therebetween is substantially free of oxygen and oxidized material; and'}a quantum tunneling barrier formed between said first and second aluminum leads so as to form a Josephson junction.3. The superconducting device of claim 1 , further comprising a plurality of aluminum leads each having at least one region of direct contact with a respective one of a NbSipassivation layer of said plurality of niobium leads claim 1 ,{'sub': 'x', 'wherein a plurality of pairs of said plurality of aluminum leads have at least one quantum tunneling barrier formed therebetween so as to form a plurality of Josephson junctions that are in superconducting connection ...

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Номер записи: 75
30-03-2017 дата публикации

COATING WITH SOLAR CONTROL PROPERTIES FOR A GLASS SUBSTRATE

Номер: US20170088461A1
Автор: CID-AGUILAR José Guadalupe, LAMSHING-TAI Arturo Si Ming, SANCHEZ-GONZALEZ Jorge, TAVARES-CORTÉS José Luis, VALVERDE-CHONG Edgar
Принадлежит:

The invention relates to a glass substrate including a stack of coating layers having control properties, in which stack comprises at least one niobium metal layer located between a layer of a dielectric material selected from SiNor TiOx and a layer of a protective metal material selected from TIN or Ni—Cr, conferring solar control and heat resistance properties on the glass substrate. 1. A glass substrate including a stack of coating layers having control properties characterized by said stack comprises at least one niobium metal layer located between a layer of a dielectric material selected of SiNor TiOx and a layer of a metal protective material selected from TiN or Ni—Cr , conferring solar control properties and heat resistance to the glass substrate.2. The substrate as claimed in claim 1 , wherein the metal layer is between 2 and 40 nm.3. The substrate as claimed in claim 1 , wherein the layer of dielectric material is between 1 and 50 nm.4. The substrate as claimed in claim 1 , wherein the layer of SiNdielectric material is between 10 and 50 nm.5. The substrate as claimed in claim l claim 1 , wherein the TiOx dielectric material layer is between 1 and 20 nm.6. The substrate as claimed in claim 1 , wherein the metal protective material layer is between 1 and 20 nm.7. The substrate as claimed in claim 1 , wherein the TiN metal protective material layer is between 5 and 20 nm.8. The substrate as claimed in claim 1 , wherein the Ni—Cr metal protective material layer is between 1 and 10 nm.9. The substrate as claimed in claim 1 , wherein the metal layer of niobium metal located between the layer of a dielectric material and the layer of metal protective material includes a number of additional layers according to the following layer structure SiN/Nb/NiCr/TiN/SiN.10. The substrate as claimed in claim 1 , wherein the niobium metal layer located between the layer of a dielectric material and the layer of a metal protective material includes a number of additional ...

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Номер записи: 76
30-03-2017 дата публикации

MO-SI-B LAYERS AND METHOD FOR THE PRODUCTION THEREOF

Номер: US20170088939A1
Автор: ARNDT Mirjam, Kalas Jiri, Mayrhofer Paul Heinz, POLCIK PETER, Rachbauer Richard, RIEDL HELMUT, Vieweg Annika
Принадлежит:

The present invention concerns substrates coated with an MoSiBlayer, said layer comprising the T2 phase, and a method for the production thereof. 1. Coated substrate with a MoSiBlayer , having the T2 phase.2. Method for the production of a MoSiBlayer by magnetron sputtering using three elementary sputter targets or alternative a Mo—Si composite target and an elementary B target , characterized in that the layers after deposition are heated to a temperature of at least 900° C. , whereby a T2 phase is formed.3. Forming tool with a MoSiBlayer having the T2 phase claim 2 , wherein the MoSiBlayer was applied onto the surface of a tool by means of a method according to . The present invention relates to Mo—Si—B layers with very good layer properties, in particular with respect to mechanical properties, resistance to oxidation and generally thermal stability at high temperatures (even 900° C. and higher).The present invention relates in particular to substrates resp. components or tools with a MoSiBlayer, wherein the layer comprises the T2 phase, and methods for the production thereof.Thanks to the exceptional properties of the Mo—Si—B layers according to the present invention, these layers are suitable in particular for coating components and tools that are used at high temperatures.The Mo—Si—B layers according to the present invention can be well suited in particular for forming tools for hot forming, such as for example hot stamping.According to a preferred embodiment of the present invention, the Mo—Si—B layers are deposited on tool surfaces that are subjected during use to high temperatures.The Mo—Si—B layers according to the present invention and according to the above mentioned preferred embodiment can according to the invention be produced and/or made available as follows:Refractory metals, such as Mo, Ta or W, have the highest melting points among all pure elements and are thus very interesting especially for high temperature applications.For such application, ...

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Номер записи: 77
30-03-2017 дата публикации

METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER

Номер: US20170088975A1
Автор: Hato Kazuhito, KIKUCHI RYOSUKE, Murase Hideaki, Nakamura Toru, Tamura Satoru
Принадлежит:

To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film. 1. A method for growing a niobium oxynitride layer , the method comprising:(a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 degrees Celsius and not more than 750 degrees Celsius; and(b) growing a second niobium oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 degrees Celsius, after the step (a), whereinthe niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.2. The method according to claim 1 , whereinthe substrate has a principal surface of a (101) plane.3. The method according to claim 1 , whereinboth of the first niobium oxynitride film and the second niobium oxynitride film have a principal surface of a (100) plane.4. The method according to claim 1 , whereinthe second niobium oxynitride film is thicker than the first niobium oxynitride film.5. The method according to claim 1 , whereinthe first niobium oxynitride film has a thickness of not less than 5 nanometers and not more than 30 nanometers.6. The method according ...

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Номер записи: 78
31-03-2016 дата публикации

DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING

Номер: US20160093477A1
Автор: ROGERS MATTHEW S.
Принадлежит:

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses. 1. A method of depositing a film on a curved surface of a substrate , the method comprising:positioning the curved surface with respect to a source of a deposition system, wherein the source includes an effective surface having a curved shape in accordance with the curved surface of the substrate; andcausing the source to emit a plurality of particles such that the plurality of particles become deposited on the curved surface as the film, wherein the curved shape of the effective surface is associated with a thickness uniformity of the film.2. The method of claim 1 , wherein the deposition system is a sputter deposition system and the source is a sputter target claim 1 , wherein causing the source to emit the plurality of particles comprises directing a sputter gas at the sputter target such that the plurality of particles are sputtered from the sputter target.3. The method of claim 1 , wherein the deposition system is a plasma enhanced chemical vapor deposition (PECVD) system and the source is a hollow cathode source claim 1 , wherein causing the source to emit the plurality of particles comprises:supplying a reaction gas to the hollow cathode source, andcausing the hollow cathode source to discharge a plasma having ions and/or other reactive chemical species corresponding to the plurality of particles.4. The method of claim 3 , wherein the deposition system includes ...

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Номер записи: 79
19-03-2020 дата публикации

PATTERNING METAL REGIONS ON METAL OXIDE FILMS/METAL FILMS BY SELECTIVE REDUCTION/OXIDATION USING LOCALIZED THERMAL HEATING

Номер: US20200087783A1
Автор: BINAGIA Jeremy, Bonnecaze Roger, Chopra Meghali, CHOPRA Sonali, Edmondson Bryce, EKERDT John
Принадлежит:

A method for creating metal patterns. A metal oxide film/metal film is deposited on a substrate in a reactor. After the metal oxide film/metal film has been deposited, the desired metal regions/metal oxide regions are formed on the metal oxide film/metal film using a reduction/oxidation reaction. A reducing/oxidizing gas is fed into the reactor. Furthermore, a heat source, such as a thermal probe or a high intensity laser beam, is pulsed to heat and form metal regions/metal oxide regions on the metal oxide film/metal film within the metal's reduction/oxidation window. In this manner, benefits over prior patterning techniques are achieved, including greater control and uniformity, reduced cost, less waste and potential for sub-5 nm features. 1. A method for creating metal patterns , comprising:depositing a metal oxide film on a substrate in a reactor;feeding a reducing gas into said reactor; andpulsing a heat source to heat and form metal regions on said metal oxide film within a metal's reduction window.2. The method as recited in further comprising:removing a remaining metal oxide film via an etch step after said forming of said metal regions.3. The method as recited in claim 1 , wherein said metal oxide film is deposited using atomic layer deposition.4. The method as recited in further comprising:feeding a carrier gas into said reactor held at vacuum; andpulsing metal oxide precursors sequentially.5. The method as recited in claim 4 , wherein said carrier gas is nitrogen gas.6. The method as recited in claim 1 , wherein said metal oxide film is deposited using one of the following: chemical vapor deposition claim 1 , sputter coating and oxidation.7. The method as recited in claim 1 , wherein said reducing gas comprises 2-10% hydrogen gas in argon.8. The method as recited in claim 1 , wherein said reducing gas comprises one of the following: carbon monoxide and ammonia.9. The method as recited in claim 1 , wherein said heat source comprises one or more nanoscale ...

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Номер записи: 80
12-05-2022 дата публикации

Thin film coating

Номер: US20220144665A1
Автор: Gregory Taylor, Jeffrey D. HETTINGER, Shahram Amini
Принадлежит: JOHNSON MATTHEY PLC

The present invention provides a thin film coating comprising a metal oxide material, wherein the metal oxide material comprises Ir and metals M and M′, wherein M and M′ are the same or different and are Ru, Rh, Pd, Os or Pt.

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Номер записи: 81
06-04-2017 дата публикации

MULTILAYER COATINGS ON SUBSTRATES

Номер: US20170096732A1
Автор: Fan Yao-Wen, KANG YU-CHUAN, Wu Kuan-Ting
Принадлежит:

Example implementations relate to manufacturing multilayer coatings on substrates. In examples, a substrate with an electrically conducting surface may be provided. A first layer of a first material may be electrophoretically deposited on at least a portion of the electrically conducting surface of the substrate. A second layer of a second, electrically conducting material may be deposited on at least a portion of the first layer using physical vapor deposition. A third layer of a third material may be electrophoretically deposited on at least a portion of the second layer. 1. A method of manufacturing a multilayer coating , comprising;providing a substrate with an electrically conducting surface;electrophoretically depositing a first layer of a first material on at least a portion of the electrically conducting surface of the substrate;depositing, using physical vapor deposition, a second layer of a second material on at least a portion of the first layer, wherein the second material is electrically conducting; andelectrophoretically depositing a third layer of a third material on at least a portion of the second layer.2. The method of claim 1 , wherein the electrically conducting surface comprises a metal alloy.3. The method of claim 2 , wherein the electrically conducting surface of the substrate comprises a reactive metal and wherein electrophoretically depositing the first layer stabilizes the reactive metal.4. The method of claim 2 , wherein the substrate comprises an alloy of at least one of aluminum claim 2 , magnesium claim 2 , lithium claim 2 , zinc claim 2 , titanium claim 2 , niobium claim 2 , and copper.5. The method of claim 1 , wherein electrophoretically depositing the first layer fills porous cavities on the surface of the substrate.6. The method of claim 1 , wherein the first material and the third material each comprises at least one of a metal claim 1 , a polymer claim 1 , a ceramic claim 1 , pigments claim 1 , and dyes.7. The method of claim 1 , ...

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Номер записи: 82
14-04-2016 дата публикации

Low-E Panels and Methods for Forming the Same

Номер: US20160102013A1
Автор: CHENG Jeremy, Ding Guowen, Ju Tong, Le Minh Huu, SCHWEIGERT Daniel, Zhang Guizhen
Принадлежит:

Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metal oxide layer is formed between the transparent substrate and the reflective layer. A base layer is formed between transparent substrate and the metal oxide layer. The base layer has a first refractive index. A dielectric layer is formed between the base layer and the metal oxide layer. The dielectric layer has a second refractive index. 1. A method for forming a low-e panel , the method comprising:providing a transparent substrate;forming a first base layer above the transparent substrate, wherein the first base layer comprises zinc and tin;forming a first dielectric layer above the first base layer, wherein the first dielectric layer comprises niobium;forming a first seed layer above the first dielectric layer, wherein the first seed layer comprises zinc;forming a first reflective layer above the first seed layer;forming a first barrier layer above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;forming a second base layer above the first barrier layer, wherein the second base layer comprises zinc and tin;forming a second dielectric layer above the second base layer, wherein the second dielectric layer comprises niobium;forming a second seed layer above the second dielectric layer, wherein the second seed layer comprises zinc;forming a second reflective layer above the second seed layer;forming a second barrier layer above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;forming a first over-coating layer above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;forming a second over-coating layer above the first over-coating layer, wherein the second over-coating layer comprises zinc; andforming a capping layer above the second over- ...

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Номер записи: 83
16-04-2015 дата публикации

Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers

Номер: US20150104569A1
Автор: Daniel Schweigert, Guizhen Zhang, Guowen Ding, Jeremy Cheng, Minh Huu Le, Yu Wang
Принадлежит: Intermolecular Inc

Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

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Номер записи: 84
16-04-2015 дата публикации

Mask blank, transfer mask, and methods of manufacturing the same

Номер: US20150104735A1
Автор: Masafumi Ishiyama, Teiichiro Umezawa
Принадлежит: Hoya Corp

Provided is a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of the thin film of a region other than the surface layer. The thin film is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side. The oxide layer is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side.

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Номер записи: 85
12-05-2022 дата публикации

OPTICAL FILTER STRUCTURE FOR ARBITRARY COMBINATION OF RGB AND IR WAVELENGTH RANGES AND ITS MANUFACTURING METHOD

Номер: US20220149212A1
Автор: CHENG Wei-Hao, NI Pei-Yuan, TSOU Cheng-Hsing
Принадлежит: KingRay Technology Co., LTD.

The present invention discloses an optical bandpass filter structure targeting an arbitrary combination of the spectral ranges of R (red), G (green), B (blue) and IR (infrared) light, which comprises a substrate that is a wafer-based semiconductor sensing element, and a filter layer that is formed on one side of the substrate. The filter layer includes a plurality of basic units organized as a two-dimensional array, in which each of the basic units is composed of a plurality of pixel filter films fabricated by a vacuum coating method. 1. An optical filter structure for an arbitrary combination of R , G , B , and IR wavelength ranges , comprising:a substrate; and wherein the substrate is a wafer-based semiconductor sensing device,', 'wherein the filter layer comprises a plurality of basic units organized as a two-dimensional array,', 'wherein each of the basic units comprises a plurality of pixel filter films formed by a vacuum coating method,', 'wherein the plurality of pixel filter films comprises an arbitrary combination of an R pixel filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, configured such that each pixel filter present in the basic unit only permits light having a wavelength within its passband to pass through., 'a filter layer formed on one side of the substrate,'}2. The optical filter structure of claim 1 , wherein:the R pixel filter film is formed by stacking, in alternation, a first plurality of silver (Ag) layers and a first plurality of high-refractive-index material layers with refractive indices higher than that of silver, such that the R pixel filter film has a thickness of 300 nm to 900 nm, the R pixel filter film has a passband with a range of 300 nm to 1100 nm with a central wavelength ranging from 625 nm to 740 nm, the R pixel filter film has a transmittance less than 1% over the cut-off band, and the R pixel filter film has a transmittance greater than 55% over the central wavelength range when the ...

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Номер записи: 86
12-04-2018 дата публикации

RARE-EARTH OXIDE BASED COATINGS BASED ON ION ASSISTED DEPOSITION

Номер: US20180100228A1
Автор: Firouzdor Vahid, Kanungo Biraja P., Sun Jennifer Y., ZHANG YING
Принадлежит:

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness. 1. A chamber component for a processing chamber comprising:a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches; and{'sub': 2', '3', '2, 'a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film comprising 40 mol % to less than 100 mol % of YOand above 0 mol % to 60 mol % of ZrO, the conformal protective layer having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.'}2. The chamber component of claim 1 , wherein the conformal protective layer has a thickness of 10-30 μm.3. The chamber component of claim 1 , wherein a porosity of the conformal protective layer is below 1%.4. The chamber component of claim 1 , wherein the conformal protective layer has a post polished roughness of less than 8 micro-inches.5. The chamber component of claim 1 , wherein the ceramic body is a bulk sintered ceramic body comprising at least one of YOor a ceramic compound comprising YAlOand a solid-solution of YO—ZrO.6. The chamber component of claim 1 , where the conformal protective layer comprises a conformal ...

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Номер записи: 87
23-04-2015 дата публикации

HARD MASK AND METHOD OF MANUFACTURING THE SAME

Номер: US20150107769A1
Автор: Nakano Katsuaki
Принадлежит: ULVAC, INC.

A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L has a film thickness h within a range of 5 to 50% of the total film thickness ht of the hard mask, and also has a film density within a range of 3.5 to 4.7 g/cm. An upper-side layer has a film density within a range of 4.8 to 5.3 g/cm. 1. A hard mask provided to restrict a range of processing to a surface of a to-be-processed object when a predetermined processing is performed on the to-be-processed object , the hard mask being constituted by a titanium nitride film ,{'sup': 3', '3, 'wherein the titanium nitride film is made into a two-layer structure with: a lower-side layer having a film thickness within a range of 5 to 50% of a total film thickness of the hard mask and also having a film density within a range of 3.5 to 4.7 g/cm; and an upper-side layer having a film density within a range of 4.8 to 5.3 g/cm.'}2. A method of manufacturing the hard mask as set forth in claim 1 , the method comprising:a first step including: evacuating a vacuum processing chamber in which a target made of titanium and the to-be-processed object are disposed; introducing rare gas and nitrogen gas such that the vacuum processing chamber attains a pressure in a range of 0.5 to 30 Pa; applying to the target electric power to form a plasma atmosphere inside the vacuum processing chamber so as to sputter the target, thereby depositing the lower-side layer, by reactive sputtering, on the surface of the to-be-processed object; anda second step including: evacuating a vacuum processing chamber in which the target made of titanium and ...

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Номер записи: 88
13-04-2017 дата публикации

METHOD OF DEPOSITION

Номер: US20170104465A1
Автор: BURGESS STEPHEN R., FRAGOS CONSTANINE, Haymore Scott, Hyndman Rhonda, Rastogi Amit
Принадлежит:

A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer. 1. A method of depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc , Y , Ti , Cr , Mg and Hf , the method comprising:depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support; anddepositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, the second layer having the same composition as the first layer.2. A method according to in which the at least one additive element is present in an amount in the range 0.5 At % to 40 At %.3. A method according to in which the at least one additive element is present in an amount in the range 2 At % to 15 At %.4. A method according to in which the at least one additive element is present in an ...

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Номер записи: 89
19-04-2018 дата публикации

REACTIVE SPUTTERING METHOD AND METHOD FOR PRODUCING LAMINATE FILM

Номер: US20180105920A1
Автор: Watanabe Hiroto
Принадлежит: SUMITOMO METAL MINING CO., LTD.

Provided is a reactive sputtering method and the like that are capable of making it unlikely for a particle deposit deposited on a non-erosion region or a nodule generated in an erosion region to be peeled off from a sputtering target, and of suppressing arc discharge and the like. 1: A reactive sputtering method for performing deposition by using a sputtering device including a magnetron sputtering cathode to which a sputtering target is mounted inside a vacuum chamber , and by introducing a process gas containing a reactive gas into the vacuum chamber , whereinthe reactive gas includes at least one of an oxygen gas and a nitrogen gas, andwater is contained in the reactive gas.2: The reactive sputtering method according to claim 1 , wherein a proportion of water added in the process gas to be introduced into the vacuum chamber is 0.25% by volume or more and 12.5% by volume or less.3: The reactive sputtering method according to claim 1 , wherein the sputtering target is made of Ni alone or a Ni-based alloy blended with one or more elements selected from Ti claim 1 , Al claim 1 , V claim 1 , W claim 1 , Ta claim 1 , Si claim 1 , Cr claim 1 , Ag claim 1 , Mo claim 1 , and Cu.4: A method for producing a laminate film claim 1 , the laminate film including: a transparent substrate made of a resin film; and a layered film provided on at least one surface of the transparent substrate claim 1 , the layered film having a metal absorption layer claim 1 , which is a first layer as counted from the transparent substrate side claim 1 , and a metal layer claim 1 , which is a second layer as counted from the transparent substrate side claim 1 , whereinthe method comprising:{'claim-ref': {'@idref': 'CLM-00003', 'claim 3'}, 'forming the metal absorption layer by using the reactive sputtering method according to ; and'}forming the metal layer by using a sputtering device including a magnetron sputtering cathode to which a sputtering target is mounted inside a vacuum chamber, and by ...

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Номер записи: 90
19-04-2018 дата публикации

MODULE AND METHOD FOR MANUFACTURING SAME

Номер: US20180108618A1
Автор: Nakagoshi Hideo, Shimizu Atsushi, Takagi Yoichi, YAMAMOTO Issei
Принадлежит:

A module includes a wiring board, a plurality of components mounted on an upper surface of the wiring board, a sealing resin layer which seals the components provided on the upper surface of the wiring board, and a shield layer provided so as to cover a surface of the sealing resin layer. The shield layer includes an adhesion layer which is stacked on the surface of the sealing resin layer and includes a first adhesion film composed of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl, a conductive layer which is stacked on the adhesion layer, and a protective layer which is stacked on the conductive layer and includes a protective film composed of a nitride, oxide, or oxynitride of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl. 1. A module comprising:a wiring board;a component mounted on a principal surface of the wiring board;a sealing resin layer provided on the principal surface of the wiring board and covering the component; anda shield layer provided so as to cover a surface of the sealing resin layer,wherein the shield layer includes:an adhesion layer stacked on the surface of the sealing resin layer and including a first adhesion film composed of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl;a conductive layer stacked on the adhesion layer; anda protective layer stacked on the conductive layer and including a protective film composed of a nitride, an oxide or an oxynitride of a metal selected from the group consisting of Ti, Cr, Ni, TiCr, TiAl, NiAl, CrAl, and CrNiAl.2. The module according to claim 1 , wherein the protective film is composed of a nitride claim 1 , an oxide or an oxynitride of a same metal as the metal of the first adhesion film.3. The module according to claim 1 , wherein the protective layer further includes a second adhesion film composed of a metal selected from the group consisting of Ti claim 1 , Cr ...

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Номер записи: 91
02-04-2020 дата публикации

Semiconductor Device, Method and Machine of Manufacture

Номер: US20200102645A1
Автор: CHI Chih-Chien, Lee Ya-Lien, SU Hung-Wen, Wang Jen-Chun
Принадлежит:

A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present. 1. A method of manufacturing a semiconductor device , the method comprising:sputtering in a first chamber a first portion of a barrier material onto a substrate on a mounting platform, wherein during the sputtering the first portion of the barrier material a first coil is situated a first distance away from the mounting platform, the mounting platform being located at a first location; andsputtering in the first chamber a second portion of the barrier material onto the substrate, wherein during the sputtering the second portion of the barrier material the first coil is situated a second distance away from the mounting platform, the second distance being different from the first distance, the mounting platform being located at the first location.2. The method of claim 1 , wherein the sputtering the second portion of the barrier material further comprises moving the first coil without moving the mounting platform.3. The method of claim 1 , wherein the sputtering the second portion of the barrier material further comprises moving the mounting platform without moving the first coil.4. The method of claim 1 , further comprising claim 1 , prior to the sputtering the first portion of the barrier material claim 1 , depositing an atomic layer deposition portion of the barrier material claim 1 , wherein the depositing the atomic layer deposition portion is performed at least in part with an atomic layer deposition process.5. The method of claim 1 , wherein the first portion of the barrier material and the second portion of the barrier material ...

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Номер записи: 92
30-04-2015 дата публикации

Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers

Номер: US20150118487A1
Автор: Colin A. Wolden, Rachel M. Morrish
Принадлежит: COLORADO SCHOOL OF MINES

The invention describes two methods for manufacturing metal dichalcogenide materials. The invention also includes a coated dichalcogenide substrate.

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Номер записи: 93
28-04-2016 дата публикации

Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

Номер: US20160118165A1
Автор: Hiroshi Tanaka, Noriaki Nagatomo, Toshiaki Fujita
Принадлежит: Mitsubishi Materials Corp

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V x Al y N z (where 0.70≦y/(x+y)≦0.98, 0.4≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a V—Al alloy sputtering target.

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Номер записи: 94
18-04-2019 дата публикации

OPTICAL ELEMENT WITH HIGH SCRATCH RESISTANCE

Номер: US20190113657A1
Автор: Apitz Dirk, HENN Christian, Walther Marten
Принадлежит: SCHOTT AG

An optical element is provided that includes a substrate that is transparent in the visible spectral region and a multilayer anti-reflection coating on the substrate. The coating has alternating layers of layers having a first refractive index and of layers having a second, higher refractive index. The layers having the higher refractive index contain nitride or oxynitride and the layers having the first refractive index contain oxide of silicon and of at least one other element. The molar fraction of silicon in the layers having the first refractive index is predominant when compared to the molar fraction(s) of the other element or elements. The uppermost layer of the coating is a layer having the first refractive index. A layer of chain-form organofluoro molecules is disposed on the coating, wherein the molecules are bonded at the ends to the surface of the optical element. 1. An optical element with high scratch resistance , comprising:a substrate that is transparent in the visible spectral region;a multilayer anti-reflection coating on the substrate, the multilayer anti-reflection coating having alternating layers of a first layer type having a first refractive index and a second layer type having a second, higher refractive index, the second layer type comprising nitride or oxynitride, the first layer type comprising oxide of silicon and at least one other element, the first layer type having a ratio of silicon to the at least one other element of at least 5:1, wherein the multilayer anti-reflection coating has an uppermost layer that comprises the first layer type; anda layer of chain-form organofluoro molecules on the multilayer anti-reflection coating, the layer having molecules that are bonded at their ends to the uppermost layer of the multilayer anti-reflection coating.2. The optical element according to claim 1 , wherein the layer of chain-form organofluoro molecules is a monomolecular layer.3. The optical element according to claim 1 , wherein the layer ...

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Номер записи: 95
07-05-2015 дата публикации

DEPOSITION OF SILICON DIOXIDE

Номер: US20150125375A1
Автор: BURGESS STEPHEN R., Hyndman Rhonda, Zhou Yun
Принадлежит:

According to the invention there is a method of depositing SiOonto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton. 1. A method of depositing SiOonto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.2. A method according to in which the ratio of krypton to oxygen claim 1 , expressed as a ratio of flow rates in sccm claim 1 , is in the range 0.1 to 0.9.3. A method according to in which said ratio of krypton to oxygen is in the range 0.2 to 0.8.4. A method according to in which RF power is applied to the substrate to produce a DC bias.5. A method according to in which the RF power applied to the substrate is in the range 20 to 150 W claim 4 , preferably 20 to 125 W.6. A method according to in which the sputtering gas mixture is present at a pressure in the range 1 mTorr to 20 mTorr (0.13 Pa to 2.67 Pa).7. A method according to which is performed to deposit SiOhaving a density of 2.35 gcmor greater claim 1 , preferably 2.40 gcmor greater.8. A method according to in which the SiOis deposited as a film claim 1 , such as a thin film.9. A method according to in which the substrate is positioned on a substrate holder claim 1 , and during the deposition of SiOthe substrate holder is at a temperature of less than 100° C. claim 1 , preferably less than 70° C.10. A method according to in which SiOis deposited onto the substrate by pulsed DC magnetron reactive sputtering.11. Pulsed DC reactive sputtering apparatus for depositing SiOonto a substrate including:a chamber or system of chambers containing a substrate holder and a target;a source of oxygen;a source of krypton;a gas supply system for supplying oxygen and krypton to the chamber; andmeans for providing pulsed DC power to cause Si to be sputtered from the target.12. A substrate having a deposit of SiOthereon claim 1 , in which the SiOis reactively sputtered SiOdeposited ...

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Номер записи: 96
27-04-2017 дата публикации

ULTRAVIOLET LIGHT-RESISTANT ARTICLES AND METHODS FOR MAKING THE SAME

Номер: US20170118855A1
Автор: Adib Kaveh, Bellman Robert Alan, Bookbinder Andrea Weiss, Hart Shandon Dee, Heberle Albert Peter, III Karl William, KOCH, Lin Lin, Paulson Charles Andrew, Schneider Vitor Marino
Принадлежит:

An ultraviolet light-resistant article that includes: a substrate having a glass or glass-ceramic composition and first and second primary surfaces; an ultraviolet light-absorbing element having a an absorptivity greater than 50% at wavelengths from about 100 nm to about 380 nm and a thickness between about 10 nm and about 100 nm; and a dielectric stack formed with a plasma-enhanced process. Further, the light-absorbing element is between the substrate and the dielectric stack. Alternatively, the light-absorbing element can include one or more ultraviolet light-resistant layers disposed within the dielectric stack over the first primary surface. 1. An ultraviolet light-resistant article , comprising:a substrate comprising a glass or glass-ceramic and first and second primary surfaces;an ultraviolet light-absorbing element having an absorption greater than 50% at wavelengths from about 100 nm to about 380 nm and a thickness between about 10 nm and about 500 nm; anda dielectric layer disposed on the first primary surface,wherein the ultraviolet light-absorbing element is between the substrate and the dielectric layer.2. The article according to claim 1 , wherein the dielectric layer comprises a first and a second dielectric layer over the first primary surface claim 1 , the layers characterized by differing refractive index values.3. The article according to claim 1 , wherein the substrate has a glass composition comprising SiO claim 1 , AlOand at least two oxides selected from the group consisting of BO claim 1 , PO claim 1 , MgO claim 1 , CaO claim 1 , SrO claim 1 , BaO claim 1 , ZnO claim 1 , NaO claim 1 , KO claim 1 , and LiO.4. The article according to claim 1 , wherein the ultraviolet light-absorbing element has an extinction coefficient (k) of ≦5×10at wavelengths from about 400 nm to about 700 nm.5. The article according to claim 1 , wherein the ultraviolet light-absorbing element has an extinction coefficient (k) of ≧5×10at wavelengths greater than about 200 ...

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Номер записи: 97
25-04-2019 дата публикации

Method of Forming a Coating on a Substrate and an Article Formed by Such a Method

Номер: US20190119806A1
Автор: CHONG Sing Kai, CHUNG Hei Ping, Xue Tao, ZHANG Yan Fang
Принадлежит:

An article (), e.g. a casing, is disclosed as including a substrate () made of a metal or a metal alloy, such as stainless steel, and a coating () deposited on the substrate (), the coating () including a base layer () of titanium (Ti) or chromium (Cr) doped with silicon (Si) or boron (B) deposited on the substrate (), a transition layer () of titanium nitride (TiN) deposited on the base layer (), and an outer decorative coloured layer () deposited on the transition layer (). 1. An article including:a substrate comprising a metal or a metal alloy, anda coating deposited on said substrate,wherein said coating includes at least a first layer including a metal doped with silicon (Si) or boron (B).2. An article according to claim 1 , wherein said metal in said first layer is titanium (Ti) or chromium (Cr).3. An article according to claim 2 , wherein a ratio of a number of titanium atoms or chromium atoms to a number of silicon atoms or boron atoms in said first layer is from substantially 5:5 to substantially 8:2.4. An article according to claim 1 , wherein said coating includes a second layer deposited on said first layer.5. An article according to claim 4 , wherein said second layer includes titanium nitride (TiN).6. An article according to claim 4 , wherein said coating includes a third layer deposited on said second layer.7. An article according to claim 6 , wherein said third layer is coloured.8. An article according to claim 1 , wherein said article is a casing.9. A method of forming a coating on a substrate claim 1 , including:(a) providing a metal or metal alloy substrate, and(b) depositing a first layer of a coating on said substrate by sputtering a metal together with silicon (Si) or boron (B) onto said substrate.10. A method according to claim 9 , wherein said metal sputtered in (b) is titanium (Ti) or chromium (Cr).11. A method according to claim 10 , wherein a ratio of a number of titanium atoms or chromium atoms to a number of silicon atoms or boron atoms ...

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Номер записи: 98
27-05-2021 дата публикации

REACTIVE SPUTTER DEPOSITION OF DIELECTRIC FILMS

Номер: US20210156019A1
Автор: OCKENFUSS Georg J.
Принадлежит:

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film. 120-. (canceled)21. A method , comprising:supplying a reactive gas to a reactive gas source that is inside a chamber;releasing, from the reactive gas source, the reactive gas into the chamber in a manner that causes the reactive gas to react with silicon atoms and form a silicon dioxide layer on a substrate; andadding a catalyst to the chamber in a manner that increases a deposition rate of the silicon dioxide layer without impacting optical absorption spectra of deposited silicon dioxide film.22. The method of claim 21 , wherein the reactive gas source is a plasma-activated reactive gas source.23. The method of claim 21 , further comprising:loading the substrate into a substrate holder before the silicon dioxide layer is formed on the substrate.24. The method of claim 21 , further comprising:activating a vacuum pump that that pumps out air from the chamber.25. The method of claim 21 , further comprising:injecting a sputtering gas, via a sputtering gas inlet, to a pre-defined pressure within the chamber.26. The method of claim 21 , further comprising:applying a voltage to one or more cathode targets in a manner that causes the silicon atoms to move from the one or more cathode targets towards the substrate and adhere to the substrate.27. The method of claim 21 , wherein the reactive gas comprises oxygen.28. The method of claim 21 , wherein the reactive gas reacts with the silicon atoms when the silicon atoms are adhered to the substrate.29. The method of claim 21 , wherein the reactive gas reacts with the ...

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Номер записи: 99
25-04-2019 дата публикации

Ion Source Device, Sputtering Apparatus and Method

Номер: US20190122873A1
Автор: CHONG Sing Kai, CHUNG Hei Ping, Xue Tao, ZHANG Yan Fang
Принадлежит:

An ion source device () includes a first magnetron cathode () and a second magnetron cathode (), each having a respective central longitudinal axis (M, M) and an ion source unit () that emits ions to pass through a space between the cathodes, a surface () of the ion source unit facing generally the cathodes, the central longitudinal axes being spaced apart from each other by a distance A, a shortest line (D) joining a surface of the cathodes is of a distance B, a centre of the ion source unit lying on a line (E) perpendicular to and bisecting the shortest line, the shortest distance between the surface of the ion source unit and the shortest line is C, with B>10 mm and C<4 A. 1. An ion source device including:at least a first magnetron cathode and a second magnetron cathode, each having a respective central longitudinal axis, andan ion source unit with a surface facing generally said first magnetron cathode and said second magnetron cathode,wherein said ion source unit is adapted to emit ions to pass through a space between said first magnetron cathode and said second magnetron cathode.2. A device according to claim 1 , wherein said central longitudinal axis of said first magnetron cathode and said central longitudinal axis of said second magnetron cathode are spaced apart from each other by a distance A claim 1 , wherein a shortest line joining a surface of said first magnetron cathode and a surface of said second magnetron cathode is of a distance B claim 1 , wherein a centre of said ion source unit lies on a line substantially perpendicular to and bisecting said shortest line claim 1 , wherein a shortest distance between said surface of said ion source unit and said shortest line is C claim 1 , and wherein B>10 mm and C<4 A.3. A device according to claim 1 , wherein at least one of said first magnetron cathode and said second magnetron cathode is in a shape of a cylinder or rectangular prism.4. A device according to claim 1 , wherein said ion source unit is in a ...

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Номер записи: 100