With corrosion resistant coating protected turbine component and method of making the same.

Eine Gasturbinenkomponente (100) enthält ein Substrat (102), das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht (106). Die korrosionsbeständige Schicht (106) ist inert für geschmolzene Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel M x V y O z , worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z=x+2,5y oder z=1,5x+2,5y oder z=2x+2,5y ist.

With corrosion resistant coating protected turbine component and method of making the same.

Eine Gasturbinenkomponente (100) enthält ein Substrat (102), das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht (106). Die korrosionsbeständige Schicht (106) ist inert für geschmolzene Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel M x V y O z , worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z=x+2,5y oder z=1,5x+2,5y oder z=2x+2,5y ist.

With corrosion-resistant coating turbine component and method for manufacturing the same protected.

Eine Gasturbinenkomponente (100) enthält ein Substrat (102), das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht (106). Die korrosionsbeständige Schicht (106) ist inert für geschmolzene Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel M x V y O z , worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z = x + 2,5y oder z = 1,5x + 2,5y oder z = 2x + 2,5y ist.

material alvo, uso do material, método para a produção de um catodo dispensador de bário-escandato e dispositivo

COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF

A coated article is described herein that may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test. 1. A coated article comprising:a substrate having a major surface, the major surface comprising a first portion and a second portion, wherein a first direction that is normal to the first portion of the major surface is not equal to a second direction that is normal to the second portion of the major surface, and the angle between the first direction and the second direction is in a range of from about 10 degrees to about 180 degrees; andan optical coating disposed on at least the first portion and the second portion of the major surface, the optical coating forming an anti-reflective surface, wherein:the coated article exhibits at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater;the coated article exhibits a photopic reflectance as measured at the anti-reflective surface at the first portion of the substrate of about 2% or less, wherein the photopic reflectance of the first portion is measured at a first incident illumination angle relative to the first direction, wherein the first incident illumination angle comprises an angle in the range from about 0 degrees to about 60 degrees from the first direction;the coated article exhibits a photopic reflectance as measured at the ...

Electroluminescent device fabricating method involves forming drying film on opposed electrode, by reaction of raw material containing alkaline/alkaline-earth metals, with oxygen

The transparent electrode (43), luminescent organic layer (45) and opposed electrode (49) are sequentially formed on a substrate (41). A drying film (49) is formed on the surface of the opposed electrode, by the reaction of the raw material containing at least any one of alkaline-earth metal such as barium, magnesium, calcium or alkaline metal, with oxygen. An Independent claim is also included for organic electroluminescence device.

SCRUBBING CELEBRATION COATING SUBSTRATE PRODUCT

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

The coated substrate product finds particular application in eyeglass and sun-glass lenses, architectural glass, analyti-cal instrument windows, automotive wind-shields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for se-vere abrasive environments and comprises a substantially optically transparent substrate (1), one or more chemically vapor deposited interlayers (2) bonded to the substrate and a chemically vapor deposited outer layer (3) of optically transparent or substantially optically transparent hard and low friction material bonded to the interlayer and away from the substrate.

Lithium uniformity for controlling the improved method of

기판을 프로세싱하기 위한 방법들 및 장치

... 기판을 프로세싱하기 위한 방법들 및 장치가 본원에 개시된다. 일부 실시예들에서, 프로세스 챔버는: 내부 볼륨을 정의하는 챔버 바디; 내부 볼륨 내에서 기판을 지지하기 위한 기판 지지부; 복수의 캐소드들 ― 복수의 캐소드들은 챔버 바디에 커플링되고, 기판 상에 스퍼터링될 대응하는 복수의 타겟들을 가짐 ―; 및 차폐부를 포함하며, 차폐부는 챔버 바디의 상부 부분에 회전가능하게 커플링되고, 복수의 타겟들 중 스퍼터링될 적어도 하나의 타겟을 노출시키기 위한 적어도 하나의 홀, 및 복수의 타겟들 중 스퍼터링되지 않을 적어도 다른 하나의 타겟을 수용 및 커버하도록 차폐부의 후면측에 배치되는 적어도 하나의 포켓을 갖고, 여기서, 차폐부는, 프로세스 챔버의 중심 축을 중심으로 회전하고 그 중심 축을 따라 선형으로 이동하도록 구성된다.

BIOCOMPATIBLE TRANSPARENT SHEET, METHOD FOR PRODUCING THE SAME, AND CELL SHEET

PROBLEM TO BE SOLVED: To provide a biocompatible transparent sheet which is highly capable of absorbing a biocompatible or biologically-relevant substance and usable as a novel biological material, enables real-time observation of the proliferation and differentiation of living cells and so on and has flexibility and softness. SOLUTION: The biocompatible transparent sheet is produced by forming a biocompatible ceramic film 2 by the laser ablation method or the like on a base material 1 being soluble in a solvent 11 in which the biocompatible ceramic is insoluble, dipping the base material 1 having the film formed thereon in the solvent 11 to thereby dissolve the base material 1 and then drying the film 2 thus separated. The biocompatible transparent sheet has flexibility and softness, and by seeding and growing cells on the surface thereof, it is possible to construct a cell sheet which can be directly transplanted into an affected part. COPYRIGHT: (C)2012,JPO&INPIT ...

Способ обработки пленочного магнитного материала гексаферрита бария

Изобретение относится к технологии получения пленок гексагонального феррита бария, которые могут быть использованы во невзаимных микроволновых устройствах: фазовращателях, изоляторах, циркуляторах. Способ обработки пленочного магнитного материала гексаферрита бария включает нанесение пленки гексаферрита бария состава BaFe12O19 на сапфировую подложку epi-ready ориентации (0001), после чего пленку в открытой атмосфере дополнительно подвергают воздействию плазмы со среднемассовой температурой в диапазоне 3727÷9727°С в течение 50-60 с, при этом в качестве источника плазмы используют плазмотрон постоянного тока с вихревой стабилизацией и расширяющимся каналом выходного электрода, генерирующий на выходе слабо расходящуюся плазменную струю азота диаметром D равным 8÷10 мм. Технический результат: формирование выраженной текстуры пленки гексаферрита бария вдоль оси <0001>, перпендикулярной поверхности сапфировой подложки, и понижение величины коэрцитивного поля в ней до значений (14330÷39000) А⋅ ...

스퍼터링 장치

... 결정성이 더욱 향상된 절연물 막을, 그 막 두께 분포를 균일하게 성막 할 수 있는 스퍼터링 장치를 제공한다. 절연물 타겟(4)이 설치되는 진공 챔버(1) 내에 이 절연물 타겟에 대향하도록 처리해야 할 기판(W)을 유지하는 스테이지(2)를 구비하며, 스테이지를 회전 구동하는 구동 수단(3)과, 절연물 타겟에 고주파 전력을 투입하는 스퍼터 전원(E1)과, 진공 챔버 내에 희가스를 도입하는 가스 도입 수단(13, 14)을 마련한 본 발명에 따른 스퍼터링 장치(SM)는, 기판과 절연물 타겟의 스퍼터면 사이의 간격(d3)을 40mm ~ 150mm의 범위로 설정하였다.

SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING SAME

The present invention aims to provide a sputtering target capable of improving an MR ratio of a magnetic tunnel junction element; and a method of manufacturing magnetic memory using the same. To achieve this, the present invention comprises a target body (10) having MgO as a main component with a thickness of 3 mm or less. COPYRIGHT KIPO 2018 ...

METHOD FOR CREATING A MINERAL TRIOXIDE AGGREGATE MATERIAL WITH IMPROVED BIOLOGICAL EFFECTS

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

METHOD FOR CREATING A MINERAL TRIOXIDE AGGREGATE MATERIAL WITH IMPROVED BIOLOGICAL EFFECTS

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

Sputtering device

METHOD AND SYSTEM OF FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING

METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE

Forming memory using high power impulse magnetron sputtering

Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

BIOCOMPATIBLE TRANSPARENT SHEET, METHOD OF PRODUCING THE SAME AND CELL SHEET

It is intended to provide a biocompatible transparent sheet which is highly capable of absorbing a biocompatible or biologically-relevant substance and usable as a novel biological material, enables real-time observation of the proliferation and differentiation of living cells and so on and has sufficient flexibility and softness. This biocompatible transparent sheet is produced by forming a biocompatible ceramic film (2) by, for example, the laser ablation method on a base material (1) being soluble in a solvent (11) in which the biocompatible ceramic is insoluble, dipping the base material (1) having the film formed thereon in the solvent (11) to thereby dissolve the base material (1) and then drying the film (2) thus separated. By seeding and growing cells on the surface of this biocompatible transparent sheet (2) having sufficient flexibility and softness, it is possible to construct a cell sheet which can be directly transplanted into an affected part.

METHOD OF CONTROLLING LITHIUM UNIFORMITY

A method and apparatus for providing uniform coatings of lithium on a substrate are provided. In one aspect of the present invention is a method of selectively controlling the uniformity and/or rate of deposition of a metal or lithium in a sputter process by introducing a quantity of reactive gas over a specified area in the sputter chamber. This method is applicable to planar and rotating targets.

METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE

A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.

Способ получения пленок феррита

Изобретение относится к технологии синтеза анизотропных (с осью легкого намагничивания, направленной перпендикулярно плоскости пленки) пленок BaFe12O19 методами осаждения из газовой фазы. Такой материал может быть использован при разработке планарных невзаимных СВЧ-устройств с эффектом самосмещения, в устройствах спинтроники в качестве магнитного диэлектрика. Способ получения пленок феррита включает изготовление мишени, обработку монокристаллической подложки ионами аргона, распыление мишени на подогретую подложку, подачу в область подложки контролируемого потока ионов кислорода, дальнейший кристаллизационный отжиг пленки, при этом для получения пленки гексаферрита бария BaFe12O19 используют мишень того же состава, монокристаллическую подложку Al2O3 кристаллографической ориентации (001), подложку в процессе напыления подогревают до температуры 300-350°С, после нанесения на подложку 70-90 нм пленки процесс напыления прерывают, после чего осуществляют выдержку пленки в течение 5 мин при температуре ...

증발기, 증착 배열체, 증착 장치 및 이들의 작동 방법들

... 알칼리 금속 또는 알칼리 토금속을 포함하는 물질의 증발을 위한, 그리고 기판(4) 상의 물질의 증착을 위한 증착 배열체가 설명된다. 배열체는, 물질을 액화시키도록 구성되는 제 1 챔버(110); 제 1 챔버와 유체 소통하며, 그리고 제 1 챔버의 하류에 있는 밸브(130) ― 밸브는 밸브를 통하는 액화된 물질의 유량의 제어를 위해 구성됨 ―; 밸브와 유체 소통하며, 그리고 상기 밸브의 하류에 있는 증발 구역(114) ― 상기 증발 구역은 상기 액화된 물질을 증발시키도록 구성됨 ―; 및 증발된 물질을 상기 기판을 향해 지향시키기 위한 하나 또는 그 초과의 배출구들(116)을 포함한다.

МИШЕНЬ ДЛЯ ДИСПЕНСЕРНОГО КАТОДА НА ОСНОВЕ СКАНДАТА БАРИЯ

FIELD: chemistry. SUBSTANCE: invention relates to the field of manufacturing dispenser cathodes based on barium scandate or other materials based on barium scandate, namely, to the target material and target for physical deposition of thin films, to a dispersed cathode based on barium scandate and the method of its preparation and method of obtaining the target. The target (66) contains a mixture or consists of a mixture of barium oxide BaO, calcium oxide CaO, aluminium oxide Al 2 O 3 and scandium oxide Sc 2 O 3 . Molar ratio of BaO:CaO:Al 2 O 3 :Sc 2 O 3 is "b:c:x:y" while 2≤b≤5, 1≤c≤3, 2≤x+y≤b+c and 0,1≤y≤1. Way of getting the cathode includes formation of porous shell, impregnated with barium compound and scandium, obtaining intermediate layer of BaO, CaO, Al 2 O 3 and Sc 2 O 3. Way of getting the target includes getting a mixture of BaO, CaO, Al 2 O 3 and Sc 2 O 3 and sintering or melting the mixture with the formation of the target. EFFECT: destabilizing effect reactions BaO and CaO oppose using more inert components Sc 2 O 3 and also Al 2 O 3 , with high content of scandium oxide not only stabilizes material but with increased content of aluminium oxide improves stability. 13 cl, 3 dwg С 2 2624264 ко РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ КУ ‘’ 2624 265 (13) 3% $ & ах. 2 опа за ^^ С (51) МПК С23С 14/08 (2006.01) С23С 14/34 (2006.01) НОУ 1/142 (2006.01) (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21)(22) Заявка: 2014107897, 31.07.2012 (24) Дата начала отсчета срока действия патента: 31.07.2012 Дата регистрации: 03.07.2017 Приоритет(ы): (30) Конвенционный приоритет: 03.08.2011 95 61/514,521 (43) Дата публикации заявки: 10.09.2015 Бюл. № 25 (45) Опубликовано: 03.07.2017 Бюл. № 19 (85) Дата начала рассмотрения заявки РСТ на национальной фазе: 03.03.2014 (86) Заявка РСТ: [В 2012/053901 (31.07.2012) (87) Публикация заявки РСТ: УГО 2013/018027 (07.02.2013) Адрес для переписки: 129090, Москва, ул. Б. Спасская, 25, строение 3, ...

МИШЕНЬ ДЛЯ ДИСПЕНСЕРНОГО КАТОДА НА ОСНОВЕ СКАНДАТА БАРИЯ

1. Материал мишени (66) для физического осаждения тонких пленок, используемый в изготовлении диспенсерных катодов на основе скандата бария или других материалов на основе скандата бария,причем материал мишени (66) содержит смесь или состоит из смеси оксида бария ВаО, оксида кальция СаО, оксида алюминия AlОи оксида скандия SсО,причем молярное отношение BaO:CaO:AlО:ScОсоставляет «b:c:x:y», с 2≤b≤5, l≤c≤3, 2≤x+y≤b+c, и 0,1≤y≤1.2. Материал мишени (66) по п. 1, причем материал мишени (66) дополнительно содержит- один или более оксидов, выбранных из группы, состоящей из оксида стронция SrO, оксида лантана LaO, оксида иттрия YO, и оксида европия EuO, в дополнение к оксиду бария, и/или- один или более оксидов одного или более редкоземельных элементов, или смесь оксидов редкоземельных элементов, со скандием в качестве основного редкоземельного элемента, в дополнение к оксиду скандия.3. Материал мишени (66) по п. 1, с 0,1<y<0,5.4. Материал мишени (66) по п. 1, в котором отношение «b:c» составляет одно из 4:1, 3:1 или 5:3.5. Материал (66) мишени по п. 1,дополнительно содержащий один или более оксидов из двух или более элементов, выбранных из группы, состоящей из бария, кальция, алюминия и скандия.6. Мишень (66) для физического осаждения тонких пленок, отличается тем, что она изготовлена из материала (66) по п. 1.7. Мишень (66) по п. 6,дополнительно содержащая BaScAlO.8. Применение материала мишени (66) в изготовлении диспенсерного катода на основе скандата бария или других материалов на основе скандата бария,в котором материал мишени (66) содержит смесь или состоит из смеси оксида бария ВаО, оксида кальция СаО, оксида алюминия AlОи оксида скандия SсО,причем молярное отношение BaO:CaO:AlО:ScОсоставляет «b:c:x:y» РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C23C 14/08 (13) 2014 107 897 A (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ЗАЯВКА НА ИЗОБРЕТЕНИЕ (21)(22) Заявка: 2014107897/02, 31.07.2012 (71) Заявитель(и): КОНИНКЛЕЙКЕ ФИЛИПС Н.В. (NL) Приоритет ...

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

... 2141536 9403331 PCTABS00030 The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate (1), a chemically vapor deposited first interlayer (2) bonded to the substrate and a chemically vapor deposited outer layer (3) of substantially optically transparent diamond-like carbon bonded to the interlayer and away from the substrate.

결정질 리튬-함유 화합물들을 준비하기 위한 기상 증착 방법

... 결정질 리튬-함유 전이 금속 산화물 화합물을 준비하기 위한 기상 증착 방법은 적어도 리튬 소스, 산소 소스, 및 하나 또는 그 초과의 전이 금속들의 소스 또는 소스들을 포함하는, 상기 화합물의 각각의 컴포넌트 엘리먼트의 다양한 소스를 제공하는 단계; 기판을 실질적으로 150℃와 실질적으로 450℃ 사이로 가열하는 단계; 및 기상 소스들로부터의 컴포넌트 엘리먼트들을 가열된 기판상에 동시-증착하는 단계를 포함하고, 컴포넌트 엘리먼트들은 결정질 화합물을 형성하기 위하여 기판상에서 반응한다.

FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING

COMPONENTS PROTECTED WITH CORROSION-RESISTANT COATINGS AND METHODS FOR MAKING THE SAME

A gas turbine engine component includes a substrate formed of a high temperature resistant material and a corrosion resistant layer. The corrosion resistant layer is inert to the molten salt impurities and includes a refractory metal vanadate of formula MVO, wherein M is selected from the group consisting of alkaline earth metals, group IV and V transition metals, rare-earth metals and their combinations, and wherein z=x+2.5y, or z=1.5x+2.5y, or z=2x+2.5y. 1. An engine component comprising:a substrate formed of a high temperature resistant material; and{'sub': x', 'y', 'z, 'a corrosion resistant layer comprising a refractory metal vanadate of formula MVO, wherein M is selected from the group consisting of alkaline earth metals, group IV and V transition metals, rare-earth metals and their combinations, and wherein z=x+2.5y, or z=1.5x+2.5y, or z=2x+2.5y.'}2. The engine component of claim 1 , wherein further comprising a thermal barrier coating system positioned between the substrate and at least a part of the corrosion resistant layer where the the corrosion resistant layer is directly coated on the thermal barrier coating system.3. The engine component of claim 2 , wherein the thermal barrier coating system comprises a layer of yttria stabilized zirconia with a thickness ranging from about 100 microns to about 1150 microns claim 2 , and a first bond coating between the layer of yttria stabilized zirconia and the substrate.4. The engine component of claim 3 , wherein the first bond coating is RCrAlE claim 3 , where R is iron claim 3 , cobalt and/or nickel claim 3 , and E is yttrium claim 3 , a rare-earth metal claim 3 , and/or another reactive metal.5. The engine component of claim 3 , wherein the thermal barrier coating system further comprises a thermally grown oxide layer between the first bond coating and the layer of yttria stabilized zirconia.6. The engine component of claim 5 , wherein the thermally grown oxide layer is AlO.76. The engine component of any one ...

TARGET FOR BARIUM - SCANDATE DISPENSER CATHODE

Sintered oxide, sputtering target, and oxide semiconductor thin-film obtained using same

A sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 DEG C, inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0 x 1018cm-3, and a carrier mobility of 10cm2V-1sec-1 or higher.

METHOD FOR CREATING A MINERAL TRIOXIDE AGGREGATE MATERIAL WITH IMPROVED BIOLOGICAL EFFECTS

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

Lamp structure and liquid crystal display apparatus having the same

A lamp according to one or more embodiments includes a tube which forms a light-emitting space, an electrode main body which is disposed in the tube, and an emitter surface metal layer which includes an alkali metal oxide and/or an alkaline earth metal oxide, and covers the electrode main body. The emitter surface metal layer may include cesium (Cs) and may further include at least one selected from the group consisting of beryllium oxide (BeO), magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), cesium oxide (CsO) and radium oxide (RaO). Therefore, discharge may be easily activated because of a high secondary electron emission coefficient. Thus, a light-emitting efficiency may be enhanced and dark start characteristics may be improved.

Electroluminescent device with drying film and method for fabricating the same

The present invention discloses an electroluminescent device with a drying film and a method for fabricating the same. The present invention is characterized in that the method comprises: providing a substrate; forming, in sequence from substrate up, a transparent electrode, a luminescent layer, and an opposed electrode; and forming a drying film by providing a raw material composed of barium (Ba), magnesium (Mg) or calcium (Ca) to react with a gaseous reactant composed of oxygen on the surface of the opposed electrode. The drying film composed of barium oxide (BaO), magnesium oxide (MgO) or calcium oxide (CaO) can be employed to absorb the moisture. Therefore, the generation of dark spots can be prevented and the reliability of the device can be improved.

Sintered oxide, sputtering target, and oxide semiconductor thin-film obtained using same

Sputtering device

本发明提供一种能够以良好的薄膜厚度分布均匀性形成结晶性进一步提高的绝缘材料膜的溅射装置。本发明的溅射装置(SM)具有在设置了绝缘材料靶(4)的真空室(1)内保持待处理基板(W)与该绝缘材料靶相对的台架(2)，设置有旋转驱动台架的驱动装置(3)，向绝缘材料靶施加高频电力的溅射电源(E1)，以及向真空室内导入稀有气体的气体导入装置(13，14)，在该溅射装置(SM)中，基板与绝缘材料靶的溅射面之间的间隔(d3)设置在40mm～150mm的范围内。

Light modulation film and method for manufacturing same, and light modulation element

A light modulation film ( 1 ) includes a light modulation layer ( 30 ) whose state is reversibly changed between a transparent state by hydrogenation and a reflective state by dehydrogenation, and a catalyst layer ( 40 ) that promotes hydrogenation and dehydrogenation in the light modulation layer, in this order on a polymer film substrate ( 10 ). light modulation layer ( 30 ) includes a light modulation region ( 32 ) having a thickness of 10 nm or more on a catalyst layer ( 40 )-side, and an oxidized region ( 31 ) on a polymer film substrate ( 10 )-side.

Metalloxid-Target und Verfahren zu seiner Herstellung

Die Erfindung betrifft ein Sputtertarget zur Herstellung von Schichten, insbesondere von optischen Schichten. Des Weiteren betrifft die Erfindung eine Schicht, insbesondere optische Schicht, und eine Vorrichtung zur Herstellung eines Sputtertargets. Ferner betrifft die Erfindung ein Verfahren zur Herstellung eines Sputtertargets. Erfindungsgemäß ist beispielsweise vorgehenden, dass das Sputtertarget des Weiteren zumindest ein Metalloxid oder des Weiteren aufweisend zumindest eine Kombination aus zumindest zwei Metalloxiden oder des Weiteren aufweisend eine Kombination von zumindest einem Metalloxid in Form einer Legierung oder in Form einer Mischung aufweist, so dass durch die Elemente Si und Al oder deren Legierung und durch das zumindest eine Metalloxid oder deren Kombination ein Sputtertarget mit Metalloxidanteil entsteht. Das Metalloxid in dem Sputtertarget ist bevorzugt ein Metalloxid aus der Gruppe ZrO2, Ta2O5, Y2O3, HfO, CaO, MgO, Ce2O3, Al2O3, TiO2 oder Nb2O5. The invention relates to a sputtering target for the production of layers, in particular of optical layers. Furthermore, the invention relates to a layer, in particular optical layer, and a device for producing a sputtering target. Furthermore, the invention relates to a method for producing a sputtering target. For example, according to the invention, the sputtering target further comprises at least one metal oxide or further comprising at least one combination of at least two metal oxides or further comprising a combination of at least one metal oxide in the form of an alloy or in the form of a mixture such that the elements Si and Al or their alloy and by the at least one metal oxide or a combination thereof, a sputtering target with metal oxide is formed. The metal oxide in the sputtering target is preferably a metal oxide from the group ZrO 2, Ta 2 O 5, Y 2 O 3, HfO, CaO, MgO, Ce 2 O 3, Al 2 O 3, TiO 2 or Nb 2 O 5.

Method of depositing material on a substrate

Method for creating a mineral trioxide aggregate material with improved biological effects

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for u se in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate (1), a chemically vapor deposited first interlayer (2) bonded to the substra te and a chemically vapor deposited outer layer (3) of substantially optically transparent diamond-like carbon bonded to the interlayer and away from the substrate.

INSULATOR TARGET

There is provided an insulator target which, when mounted on a sputtering apparatus and supplied with AC power, is capable of preventing the discharging from occurring in a clearance between a shield and the target. The insulator target for the sputtering apparatus according to this invention, around which is disposed a shield at the time of assembling the insulator target on the sputtering apparatus, is made up of: a plate-shaped target material to be enclosed by the shield; and, suppose that one surface of the target material is defined as a sputtering surface to be subjected to sputtering, an annular supporting material coupled to an outer peripheral portion of the opposite surface of the target material. The supporting material has an extended portion which is extended outward from a peripheral surface of the target material and which keeps a predetermined clearance to the shield.

Metal oxide target and method for producing said metal oxide target

A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO 2 , Ta 2 O 5 , Y 2 O 3 , HfO, CaO, MgO, Ce 2 O 3 , Al 2 O 3 , TiO 2 and Nb 2 O 5 .

COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF

산화물 소결체, 스퍼터링용 타겟 및 그것을 이용하여 얻어지는 산화물 반도체 박막

... 본 발명은, 스퍼터링법에 의해 산화물 반도체 박막으로 한 경우에, 낮은 캐리어 농도, 높은 캐리어 이동도를 얻을 수 있는 산화물 소결체, 및 그것을 이용한 스퍼터링용 타겟을 제공한다. 이 산화물 소결체는, 인듐, 갈륨 및 마그네슘을 산화물로서 함유한다. 갈륨의 함유량이 Ga/(In+Ga) 원자수비로 0.20 이상 0.45 이하이고, 마그네슘의 함유량이 Mg/(In+Ga+Mg) 원자수비로 0.0001 이상 0.05 미만이며, 1200℃ 이상 1550℃ 이하에서 소성하는 것이 바람직하다. 이 산화물 소결체를 스퍼터링용 타겟으로서 형성한 비정질의 산화물 반도체 박막은, 캐리어 농도 3.0×1018 cm-3 미만이고, 캐리어 이동도 10 ㎠V-1sec-1 이상을 얻을 수 있다.

SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM USING SAME

The present invention relates to a sputtering target, a sputtering device having the same, a transparent conductive film, a manufacturing method of the transparent conductive film, and use thereof. The present invention provides a conductive film and a manufacturing method thereof, wherein with a multiple composition sputtering target having a metal oxide compound, when surface resistance of a transparent conductive film is lowered to be applied to a large-scaled touch screen panel, a recognition speed is improved. Moreover, the conductive film has a rapid crystallization speed at a low temperature. COPYRIGHT KIPO 2017 ...

PROCESS-COMPATIBLE SPUTTERING TARGET FOR FORMING FERROELECTRIC MEMORY CAPACITOR PLATES

A sputtering target for a conductive oxide, such as SrRuO, to be used for the sputter deposition of a conductive film that is to be in contact with a ferroelectric material in an integrated circuit. The sputtering target is formed by the sintering of a powder mixture of the conductive oxide with a sintering agent of an oxide of one of the constituents of the ferroelectric material. For the example of lead-zirconium-titanate (PZT) as the ferroelectric material, the sintering agent is one or more of a lead oxide, a zirconium oxide, and a titanium oxide. The resulting sputtering target is of higher density and lower porosity, resulting in an improved sputter deposited film that does not include an atomic species beyond those of the ferroelectric material deposited adjacent to that film. 1. A method of fabricating an integrated circuit including a ferroelectric capacitor , comprising the steps of:depositing a first conductive film, comprising a conductive oxide, near a semiconducting surface of a body, by sputter deposition of the conductive oxide from a sputtering target;depositing a ferroelectric material overlying the first conductive film, the ferroelectric material comprising a compound of a plurality of metal constituents;depositing a second conductive film, comprising the conductive oxide, overlying the ferroelectric material; andremoving portions of the first and second conductive films, and the ferroelectric material, at selected locations, to define the ferroelectric capacitor;wherein the sputtering target comprises a conductive oxide sintered body containing an oxide of one of the plurality of metal constituents of the ferroelectric material.2. The method of claim 1 , wherein the ferroelectric material comprises lead-zirconium-titanate.3. The method of claim 2 , wherein the oxide of one of the plurality of metal constituents of the ferroelectric material is selected from a group consisting of a lead oxide claim 2 , a titanium oxide claim 2 , and a zirconium ...

C12A7 ELECTRIDE THIN FILM FABRICATION METHOD AND C12A7 ELECTRIDE THIN FILM

A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm3 to 2.3×1021 cm3.

METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM

A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising a compound of Chemical Formula 1 on the substrate: BapLaqSnmOn Formula 1 wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and 6 or less, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.

Method of depositing material on a substrate

A method of depositing a material on a substrate 328 comprises generating a plasma remote from one or more sputter targets 303, 304 comprising an alkali metal, an alkaline earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound or a combination thereof and sputtering material from the one or more targets onto the substrate using the plasma, wherein the working distance between the one or more targets and the substrate is within +/- 50% of the theoretical mean free path of the system. The alkali or alkaline earth metal-containing compound may take the form of a layered oxide material and may be lithium cobalt oxide. The method may be used to manufacture a solid-state battery comprising multiple stacked cathode, electrolyte and anode layers. A method of determining the optimum working distance for a remote plasma deposition system comprises depositing material on test specimens using a range of working distances and performing X-ray diffraction on the ...

FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING

Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING APPARATUS OF THE SAME

According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a cap layer on the first magnetic layer, heating a base including the cap layer after the cap layer is formed, forming a nonmagnetic layer on the cap layer while the base is heated, cooling the base including the nonmagnetic layer after the nonmagnetic layer is formed, and forming a second magnetic layer on the nonmagnetic layer after the base is cooled. 1. A method of manufacturing a magnetoresistive memory device , the method comprising:forming a first magnetic layer on a substrate;forming a cap layer on the first magnetic layer;heating a base including the cap layer at a first temperature after the cap layer is formed;forming a nonmagnetic layer on the cap layer; andforming a second magnetic layer on the nonmagnetic layer.2. The method of claim 1 , whereinthe heating the base is heating the substrate by a hotplate on which the substrate is laid.3. The method of claim 1 , whereinthe heating the base is emitting infrared radiation toward the cap layer.4. The method of claim 1 , further comprising:heating the base including the first magnetic layer at a second temperature lower than the first temperature before the cap layer is formed.5. The method of claim 1 , whereinthe cap layer and the nonmagnetic layer are formed by sputtering in a same chamber.6. The method of claim 1 , whereinthe cap layer is nonmagnetic.7. The method of claim 5 , whereinthe cap layer and the nonmagnetic layer are of a same material.8. The method of claim 1 , whereinone of the first and second magnetic layers is a storage layer and other one of the layers is a reference layer, andthe nonmagnetic layer is a tunnel barrier layer.9. The method of claim 1 , whereinthe cap layer is oxide or nitride including at least one of Si, Ba, Ca, La, Mn, Zn, Hf, Ta, Ti, B, Cu, Cr, V, Mg, and Al.10. The method of claim 1 , whereinthe base including the ...

MASK-ASSISTED RADIALLY SEGMENTED TARGET PHYSICAL VAPOR DEPOSITION

In a first aspect, the invention relates to a method of producing a thin film material composition on a substrate comprising providing an ablation source, the substrate and a target comprising target material which is inhomogeneous and to be deposited onto the substrate, wherein the ablation source is emitting an ablation beam onto the target at an ablation point and/or along an ablation track by means of the ablation source, such that the target material is ablated and deposited on the substrate forming the thin film material composition. The chemical composition of the material flux of target material towards the substrate is defined by a composition of target material at the ablation point and/or by an average composition of target material along the ablation track. The method is characterized in that a mask comprising at least one aperture is located between the target and the substrate, wherein the mask and the substrate are presently positioned moveable with respect to each other ...

Material deposition apparatus and method

Vapour deposition method for preparing crystalline lithium-containing compounds

BIOCOMPATIBLE TRANSPARENT SHEET, METHOD OF PRODUCING THE SAME AND CELL SHEET

The present invention provides a flexible, biocompatible transparent sheet (8) which has high biocompatibility and a high ability to adsorb a biologically relevant substance, which can be used as a novel biomaterial, and which can be used to observe the propagation, differentiation, and/or the like of living cells in real time. The biocompatible transparent sheet (8) is produced in such a manner that a biocompatible ceramic film (2) is formed on a substrate (1) soluble in a solvent (11) incapable of dissolving biocompatible ceramics by using exemplary a laser ablation process, the substrate (1) depositing the film (2) is dipped in the solvent (11) and dissolved off, and the isolated film (2) is then dried. The biocompatible transparent sheet (8) is utilizable of producing a flexible cultured cell sheet which can be directly transplanted to an affected area. The cell sheet can be prepared in such a manner that cells are seeded on the biocompatible transparent sheet (8) and then propagated ...

SPUTTERING APPARATUS

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate (1), one or more chemically vapor deposited interlayers (2) bonded to the substrate and a chemically vapor deposited outer layer (3) of optically transparent or substantially optically transparent hard and low friction material bonded to the interlayer and away from the substrate.

Biocompatible transparent sheet, method for producing the same, and cultured cell sheet used the same sheet

The present invention provides a flexible, biocompatible transparent sheet ( 8 ) which has high biocompatibility and a high ability to adsorb a biologically relevant substance, which can be used as a novel biomaterial, and which can be used to observe the propagation, differentiation, and/or the like of living cells in real time. The biocompatible transparent sheet ( 8 ) is produced in such a manner that a biocompatible ceramic film ( 2 ) is formed on a substrate ( 1 ) soluble in a solvent ( 11 ) incapable of dissolving biocompatible ceramics by using exemplary a laser ablation process, the substrate ( 1 ) depositing the film ( 2 ) is dipped in the solvent ( 11 ) and dissolved off, and the isolated film ( 2 ) is then dried. The biocompatible transparent sheet ( 8 ) is utilizable of producing a flexible cultured cell sheet which can be directly transplanted to an affected area. The cell sheet can be prepared in such a manner that cells are seeded on the biocompatible transparent sheet ( 8 ) and then propagated.

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate (1), a chemically vapor deposited first interlayer (2) bonded to the substrate and a chemically vapor deposited outer layer (3) of substantially optically transparent diamond-like carbon bonded to the interlayer and away from the substrate.

IMPROVED METHOD OF CONTROLLING LITHIUM UNIFORMITY

Film structure and method for manufacturing the same

A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

Superconductor manufacturing method, superconductor, and superconductor substrate

The present invention is a superconductor manufacturing method comprising a substrate preparation step of preparing a substrate in which a groove is formed in the surface on at least one side thereof, a superconducting layer formation step of forming a superconducting layer on the surface of the substrate on the side thereof on which the groove is formed, and a cutting step of cutting the substrate at the groove portion thereof.

수직 자화형 자기 터널 접합 소자를 형성하는 방법, 및 수직 자화형 자기 터널 접합 소자의 제조 장치

... 수직 자화형 자기 터널 접합 소자를 형성하는 방법이 제공된다. 이 방법은, 피처리체의 제1 자성층 상에 터널 배리어층을 형성하는 공정과, 터널 배리어층이 형성된 피처리체를 냉각하는 공정과, 냉각하는 공정 후에, 터널 배리어층 상에 제2 자성층을 형성하는 공정을 포함한다.

Dielectric film and electronic parts

本發明的目的在於提供一種具有高相對介電常數、Q值及絕緣擊穿電壓之介電體膜及使用該介電體組成物的電子零件。上述介電體膜之特徵在於：上述介電體膜以具有NaCl型結晶構造之鹼土金屬氧化物為主成分；上述介電體膜在法線方向具有(111)配向的柱狀結構；在上述介電體膜的Cu-Kα X射線繞射圖中，(111)之繞射峰的半高寬為0.3°~2.0°。

Method for Forming Perpendicular Magnetization Type Magnetic Tunnel Junction Element and Apparatus for Producing Perpendicular Magnetization Type Magnetic Tunnel Junction Element

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling. 1. A method for forming a perpendicular magnetization type magnetic tunnel junction element , comprising:forming a tunnel barrier layer on a first magnetic layer of a workpiece;cooling the workpiece on which the tunnel barrier layer is formed; andforming a second magnetic layer on the tunnel barrier layer after the cooling.2. The method of claim 1 , wherein claim 1 , in the cooling claim 1 , the workpiece is cooled down to a temperature equal to or lower than 200 Kelvin.3. The method of claim 1 , wherein the tunnel barrier layer is formed of a magnesium oxide claim 1 , andwherein the forming a tunnel barrier layer includes:forming a magnesium layer on the first magnetic layer; andoxidizing the magnesium layer under an oxygen atmosphere.4. The method of claim 1 , wherein the first magnetic layer and the second magnetic layer contain cobalt claim 1 , iron and boron.5. An apparatus for manufacturing a perpendicular magnetization type magnetic tunnel junction element claim 1 , comprising:a transfer device configured to transfer a workpiece;a first module configured to form a first magnetic layer;a second module configured to form a tunnel barrier layer;a third module configured to cool the workpiece;a fourth module configured to form a second magnetic layer; anda control part configured to control the transfer device, the first module, the second module, the third module, and the fourth module,wherein the control part is configured to control the transfer device, the first module, the second module, the third module, and the fourth module to:transfer the workpiece to the first module;form the first magnetic layer on the workpiece in the first module; ...

PROCESS-COMPATIBLE SPUTTERING TARGET FOR FORMING FERROELECTRIC MEMORY CAPACITOR PLATES

A sputtering target for a conductive oxide, such as SrRuO 3 , to be used for the sputter deposition of a conductive film that is to be in contact with a ferroelectric material in an integrated circuit. The sputtering target is formed by the sintering of a powder mixture of the conductive oxide with a sintering agent of an oxide of one of the constituents of the ferroelectric material. For the example of lead-zirconium-titanate (PZT) as the ferroelectric material, the sintering agent is one or more of a lead oxide, a zirconium oxide, and a titanium oxide. The resulting sputtering target is of higher density and lower porosity, resulting in an improved sputter deposited film that does not include an atomic species beyond those of the ferroelectric material deposited adjacent to that film.

절연물 타겟

스퍼터링 장치에 부착하여 교류전력을 투입 할 때, 실드와 타겟 사이의 간극에서 방전이 일어나는 것을 방지할 수 있는 절연물 타겟을 제공한다. 절연물 타겟(2)의 스퍼터링 장치 SM에 부착시, 그 주위에 실드(5)가 배치되는 본 발명의 스퍼터링 장치용의 절연물 타겟(2)은 실드로 둘러싸인 판 모양의 타겟재(21)과 타겟재의 한쪽 면이 스퍼터링되는 스퍼터면(2a)과, 타겟재의 다른 면의 외측 둘레부에 접합되어 타겟재의 표면으로부터 외측으로 연출됨과 동시에 실드로부터 소정 간격을 가지는 연출부(22a)를 포함하는 고리 모양의 지지재(22)를 갖추어, 지지재는 절연물 타겟에 교류전력을 투입하여 스퍼터 면이 스퍼터링될 때, 타겟재의 임피던스와 같거나 그 이상의 임피던스를 가지도록 구성되었다. The present invention provides an insulating target capable of preventing a discharge from occurring in a gap between a shield and a target when an AC power is applied by being attached to a sputtering apparatus. The insulating target 2 for the sputtering apparatus of the present invention, in which the shield 5 is disposed around the sputtering apparatus SM of the insulating target 2, has a plate-shaped target member 21 surrounded by a shield, A sputtering surface 2a on one side of which is sputtered and an annular support member 22a which is joined to the outer periphery of the other surface of the target material and which is directed outward from the surface of the target material and which has a leading portion 22a, (22), and the support material is configured to have an impedance equal to or more than the impedance of the target material when the sputter surface is sputtered by applying AC power to the insulating target.

METAL OXIDE TARGET AND METHOD FOR PRODUCING SAID METAL OXIDE TARGET

A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO, TaO, YO, HfO, CaO, MgO, CeO, AlO, TiOand NbO. 116-. (canceled)17. A sputtering target for producing layers , wherein the target comprises the elements Si and Al or an Si—Al alloy and at least one metal oxide , at least one combination of at least two metal oxides , or a combination comprising at least one metal oxide in the form of an alloy or in the form of a mixture , wherein a sputtering target having a metal oxide fraction is generated by the Si and Al or the alloy thereof and by the at least one metal oxide or the combination thereof.18. The sputtering target according to claim 17 , wherein the at least one metal oxide is selected from ZrO claim 17 , TaO claim 17 , YO claim 17 , HfO claim 17 , CaO claim 17 , MgO claim 17 , CeO claim 17 , AlO claim 17 , TiOand NbO.19. The sputtering target according to claim 17 , wherein the target comprises a combination of ZrOand YO.20. The sputtering target according to claim 17 , wherein the target has an aluminum content ranging from 1 to 35 at %.21. The sputtering target according to claim 17 , wherein the target has a metal oxide content ranging from 10 to 50 mol %.22. The sputtering target according to claim 17 , wherein the target comprises an oxide alloy ZrO:YOhaving a YOfraction ranging from 4 to 8 mol %.23. A sputtering target for producing layers claim 17 , wherein the target comprises the element Si or ...

Conductive laminated body and method for preparing the same

Disclosed is a conductive laminated body, and a method for preparing the same, wherein the conductive laminated body including: a substrate; a zinc oxide-based thin film doped with an element M; and an interlayer including an oxide M2O3, which is interposed between the substrate and the zinc oxide-based thin film. The disclosed conductive laminated body includes a metal oxide interlayer of an oxidation number +3, between a substrate and a zinc oxide layer. Therefore, it is possible to improve electrical properties of a transparent conductive thin film, especially, a resistivity property, and to minimize the unevenness in electrical properties between a middle portion and a circumferential portion on the surface of the thin film in sputtering deposition. Also, in deposition of a zinc oxide film, in addition to inert gas such as argon gas, the use of hydrogen gas can improve the concentration of electrons, and herein, the interposition of an interlayer including a metal oxide, between the ...

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×1018 cm−3, and a carrier mobility of 10 cm2V−1 sec−1 or higher.

SCHEUERFEST BESCHICHTETES SUBSTRATPRODUKT

Oxide superconducting wire

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.

Alkali resistant optical coatings for alkali lasers and methods of production thereof

In one embodiment, a multilayer dielectric coating for use in an alkali laser includes two or more alternating layers of high and low refractive index materials, wherein an innermost layer includes a thicker, >500 nm, and dense, >97% of theoretical, layer of at least one of: alumina, zirconia, and hafnia for protecting subsequent layers of the two or more alternating layers of high and low index dielectric materials from alkali attack. In another embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.

PROTECTIVE METAL OXY-FLUORIDE COATINGS

An article has a body having a protective coating. The protective coating is a thin film that includes a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MxOyFz, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

OXIDE SUPERCONDUCTING WIRE

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate, and a Vickers hardness of the Cu plating layer is in the range of 80 to 190 HV. 1. An oxide superconducting wire comprising:a superconducting laminate comprising an oxide superconducting layer disposed, either directly or indirectly, on a substrate; anda stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate,wherein a Vickers hardness of the Cu plating layer is in a range of 70 to 195 HV.2. The oxide superconducting wire according to claim 1 ,wherein an average crystal grain size of the Cu plating layer is in a range of 0.52 to 1.25 μm.3. The oxide superconducting wire according to claim 1 , wherein an average number of grain boundaries per 100 μm length of the Cu plating layer is 80 or more.4. The oxide superconducting wire according to claim 2 , wherein an average number of grain boundaries per 100 μm length of the Cu plating layer is 80 or more. Priority is claimed on Japanese Patent Application No. 2019-064778 filed in Japan on Mar. 28, 2019, the contents of which are incorporated herein by reference in its entirety.The present invention relates to an oxide superconducting wire.The RE123-based oxide superconductor (REBaCuO, RE is a rare earth element) shows superconductivity at a temperature (approximately 90K) exceeding the liquid nitrogen temperature (77K). Since such superconductors have a higher critical current density in a magnetic field than other high-temperature superconductors, they are expected to be applied to coils, power cables, and the like. For example, Patent Document 1 describes an oxide superconducting wire in which an oxide superconducting layer and an Ag stabilization layer are formed on a substrate, and then a Cu ...

유전체 박막 및 전자 부품

... 낮은 유전 손실, 즉 높은 Q값을 유지한 채로, 급격한 온도 변화에 대응하는 높은 내열 충격성을 갖는 MgO를 주성분으로 한 유전체 박막 및 그 유전체 박막을 구비한 전자 부품을 제공하는 것을 목적으로 한다. MgO를 주성분으로 하는 유전체 박막으로서, 상기 유전체 박막이, 단결정으로 구성되는 기둥 형상 구조 A와, 다결정으로 구성되는 기둥 형상 구조 B를 각각 적어도 하나 이상 포함하는 기둥 형상 구조군으로 이루어지고, 상기 유전체 박막의 수직 방향의 단면에서의 상기 기둥 형상 구조 A가 차지하는 면적을 CA, 상기 기둥 형상 구조 B가 차지하는 면적 CB로 한 경우, 상기 CA와 CB의 관계가 0.4≤CB/CA≤1.1인 것을 특징한다.

Dielectric thin film and electronic component

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4≤CB/CA≤1.1.

METHOD FOR CREATING A MINERAL TRIOXIDE AGGREGATE MATERIAL WITH IMPROVED BIOLOGICAL EFFECTS

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

LAMP, METHOD FOR MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME

A lamp according to one or more embodiments includes a tube which forms a light-emitting space, an electrode main body which is disposed in the tube, and an emitter surface metal layer which includes an alkali metal oxide and/or an alkaline earth metal oxide, and covers the electrode main body. The emitter surface metal layer may include cesium (Cs) and may further include at least one selected from the group consisting of beryllium oxide (BeO), magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), cesium oxide (CsO) and radium oxide (RaO). Therefore, discharge may be easily activated because of a high secondary electron emission coefficient. Thus, a light-emitting efficiency may be enhanced and dark start characteristics may be improved.

VAPOR DEPOSITION MATERIAL FOR THE PRODUCTION OF STRONTIUM/CALCIUM COMPOSITE OXIDE FILMS

METHOD FOR FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING SAME

Provided are a method for forming a metal oxide layer, and a magnetic memory device including the same. The method for forming a metal oxide layer comprises a post-oxidizing process of performing at least one process cycle including the following steps: depositing a metal layer on a magnetic layer; and oxidizing the metal layer, thereby easily controlling properties in an interface between a lower part of the magnetic layer and the metal oxide layer and reducing damage to the lower part of the magnetic layer. Therefore the metal oxide layer with improved crystallizability and low RA properties can be prepared. COPYRIGHT KIPO 2016 (S12) Deposit a metal layer (S14) Oxidize the metal layer (S200) Deposit an oxide layer (S300) Stabilization ...

BIOCOMPATIBLE TRANSPARENT SHEET, METHOD OF PRODUCING THE SAME AND CELL SHEET

It is intended to provide a biocompatible transparent sheet which is highly capable of absorbing a biocompatible or biologically-relevant substance and usable as a novel biological material, enables real-time observation of the proliferation and differentiation of living cells and so on and has sufficient flexibility and softness. This biocompatible transparent sheet is produced by forming a biocompatible ceramic film (2) by, for example, the laser ablation method on a base material (1) being soluble in a solvent (11) in which the biocompatible ceramic is insoluble, dipping the base material (1) having the film formed thereon in the solvent (11) to thereby dissolve the base material (1) and then drying the film (2) thus separated. By seeding and growing cells on the surface of this biocompatible transparent sheet (2) having sufficient flexibility and softness, it is possible to construct a cell sheet which can be directly transplanted into an affected part. © KIPO & WIPO 2009 ...

Oxide superconducting electric wire

Film structure and method for producing same

本發明的課題在於提供可以使含鋯鈦酸鉛的壓電膜的壓電特性提高之膜構造體。 解決手段之膜構造體，具有包含由(100)面構成的上面(11a)的矽基板之基板(11)、及被形成於上面(11a)，且具有立方晶之結晶構造，而且包含(100)配向的氧化鋯膜之配向膜(12)、以及被形成於配向膜(12)上，具有立方晶的結晶構造，且包含(100)配向的鉑膜之導電膜(13)。配向膜(12)與導電膜(13)之間的界面(IF1)的平均界面粗糙度，比基板(11)與配向膜(12)之間的界面(IF2)的平均界面粗糙度更大。

TARGET FOR BARIUM - SCANDATE DISPENSER CATHODE

The invention relates to the field of production of barium-scandate dispenser cathodes or other barium-scandate materials. A target (66) containing a mixture of BaO, CaO, Al2O3 and SC2O3 tends to be more stable, the higher the scandia (scandium oxide) content is. However, an increased scandia content results in a reduced emission capability. A destabilizing effect of BaO and CaO reactions is counteracted by the more inert SC2O3 and also AI2O3 components, as not only an increased scandia content stabilizes the material but also an increased alumina (aluminum oxide) content improves the stability.

Mit korrosionsbeständigen Beschichtungen geschützte Komponenten und Verfahren zur Herstellung derselben

Eine Gasturbinenkomponente enthält ein Substrat, das aus einem hochtemperaturbeständigen Material ausgebildet ist, und eine korrosionsbeständige Schicht. Die korrosionsbeständige Schicht ist inert für die geschmolzenen Salzverunreinigungen und enthält ein hochschmelzendes Metallvanadat der Formel MxVyOz, worin M aus der Gruppe bestehend aus Erdalkalimetallen, Übergangsmetallen der Gruppe IV und V, seltenen Erdmetallen und ihren Kombinationen ausgewählt ist und worin z = x + 2,5y oder z = 1,5x + 2,5y oder z = 2x + 2,5y ist.

Production method for c12a7 electride thin film, and c12a7 electride thin film

Provided is a production method for a C12A7 electride thin film, said production method being characterized in that a target of crystalline C12A7 electride having an electron density of 2.0x1018cm-3 to 2.3x1021cm-3 is used under an atmosphere of low oxygen partial pressure when carrying out film formation on a substrate by means of a vapor deposition method in order to form an amorphous C12A7 electride thin film.

CONDUCTIVE LAMINATED BODY AND METHOD FOR PREPARING THE SAME

Disclosed is a conductive laminated body, and a method for preparing the same, wherein the conductive laminated body including: a substrate; a zinc oxide-based thin film doped with an element M; and an interlayer including an oxide M'2O3, which is interposed between the substrate and the zinc oxide-based thin film. The disclosed conductive laminated body includes a metal oxide interlayer of an oxidation number +3, between a substrate and a zinc oxide layer. Therefore, it is possible to improve electrical properties of a transparent conductive thin film, especially, a resistivity property, and to minimize the unevenness in electrical properties between a middle portion and a circumferential portion on the surface of the thin film in sputtering deposition. Also, in deposition of a zinc oxide film, in addition to inert gas such as argon gas, the use of hydrogen gas can improve the concentration of electrons, and herein, the interposition of an interlayer including a metal oxide, between the ...

METHOD FOR FORMING MAGNESIUM OXIDE THIN FILM AND PROCESSED PLATE

A method for depositing a magnesium oxide thin film on a substrate by a laser ablation method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film, which is composed of magnesium oxide having the (111) plane as a surface, is formed by directly depositing and epitaxially growing a film on the main surface of a substrate that is composed of strontium titanate having the (111) plane as the main surface or yttria-stabilized zirconia having the (111) plane as the main surface.

ABRASION WEAR RESISTANT COATED SUBSTRATE PRODUCT

SCHEUERFEST BESCHICHTETES SUBSTRATPRODUKT

ALKALI RESISTANT OPTICAL COATINGS FOR ALKALI LASERS AND METHODS OF PRODUCTION THEREOF

In one embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali. In another embodiment, a method for forming an alkali resistant coating includes forming two or more alternating layers of high and low refractive index oxide materials above a substrate, wherein an innermost layer of the two or more alternating layers is on an alkali-contacting side of the alkali resistant coating, and wherein the innermost layer of the two or more alternating layers comprises at least one of: alumina, zirconia, and hafnia. 1. A method for forming an alkali resistant coating , the method comprising:forming a first oxide material above a substrate; andforming a second oxide material above the first oxide material to form a multilayer dielectric coating,wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.2. The method as recited in claim 1 , wherein the alkali resistant coating produces reflectances of less than about 5% at an angle of incidence for a laser beam having a wavelength of between about 650 nm and about 900 nm.3. The method as recited in claim 1 , wherein the alkali resistant coating produces reflectances of greater than about 98% at pump wavelengths having an angle of incidence of between about 50° and about 90°.4. The method as recited in claim 1 , wherein the substrate defines a structure having an interior claim 1 , wherein the first oxide material and the second oxide material form concentric layers in the interior of the structure claim 1 , and wherein the second oxide material is an innermost layer of the concentric layers.5. The method as recited in claim 4 , wherein the innermost layer of the concentric layers protects subsequent layers ...

SPUTTERING APPARATUS

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so as to face the insulator target. The sputtering apparatus has: a driving means for driving to rotate the stage; a sputtering power source E for applying HF power to the insulator target; and a gas introduction means for introducing a rage gas into the vacuum chamber. The sputtering apparatus is characterized in that a distance d between the substrate and the insulator target is set to a range between 40 mm-150 mm. 1. A sputtering apparatus comprising:a vacuum chamber having disposed therein an insulator target;a stage for holding thereon a substrate to be processed, the stage being disposed inside the vacuum chamber so as to face the insulator target;a driving means for driving to rotate the stage;a sputtering power source for applying HF power to the insulator target; anda gas introduction means for introducing a rare gas into the vacuum chamber;wherein a distance between the substrate and the sputtering surface of the insulator target is set to a range between 40 mm-150 mm.2. The sputtering apparatus according to claim 1 , wherein the insulator target is constituted by at least two target materials having a smaller area than the area of the substrate claim 1 , said at least two target materials being disposed on an identical plane that is parallel with the substrate held by the stage while being respectively offset from the center of the substrate.3. The sputtering apparatus according to claim 1 , further comprising: such another metal target having a gettering effect as is disposed on said plane; and another sputtering power source for supplying DC power to said another target.4. The sputtering apparatus according to claim 3 , further comprising a ...

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550° C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.0×10 18 cm −3 , and a carrier mobility of 10 cm 2 V −1 sec −1 or higher.

OXIDE SUPERCONDUCTING WIRE

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate. An average crystal grain size of the Cu plating layer is 3.30 μm or more and equal to or less than a thickness of the Cu plating layer. 1. An oxide superconducting wire comprising:a superconducting laminate comprising an oxide superconducting layer disposed, either directly or indirectly, on a substrate; anda stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate,wherein an average crystal grain size of the Cu plating layer is 2 μm or more and equal to or less than a thickness of the Cu plating layer.2. An oxide superconducting wire comprising:a superconducting laminate comprising an oxide superconducting layer disposed, either directly or indirectly, on a substrate; anda stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate,wherein an average number of grain boundaries per 100 μm length of the Cu plating layer along a longitudinal direction of the oxide superconducting wire is 50 or less.3. The oxide superconducting wire according to claim 1 , wherein a residual resistance ratio of the stabilization layer claim 1 , which is a ratio of a specific resistance at 293K to a specific resistance at 15K claim 1 , is 110 or more and 130 or less.4. The oxide superconducting wire according to claim 2 , wherein a residual resistance ratio of the stabilization layer claim 2 , which is a ratio of a specific resistance at 293K to a specific resistance at 15K claim 2 , is 110 or more and 130 or less.5. The oxide superconducting wire according to claim 1 , wherein an average crystal grain size of the Cu plating layer is 3.30 μm or more and equal to or less than a thickness of the Cu plating layer.6. The ...

Integrated Oxide Device

Various embodiments provide for systems and techniques for the successful fabrication of metal oxide (TMO)-on-glass layer stacks via direct deposition. The resulting samples feature epitaxial, strontium titanate (STO) or barium titanate (BTO) films on silicon dioxide (SiO) layers, forming STO- or BTO-buffered SiOpseudo-substrates. As the integration of TMO films on silicon rely on an STO or BTO buffer layer, a wide variety of TMO-based integrated devices (e.g., circuits, waveguides, etc.) can be fabricated from the TMO-on-glass platform of the present technology. Moreover, the STO, or the BTO, survives the fabrication process without a corresponding degradation of crystalline quality, as evidenced by various objective measures. 1. A method comprising: 'wherein the SOI wafer includes a device silicon layer on top of a layer of silicon dioxide; and', 'growing, via a direct deposition process, an epitaxial transition metal oxide (TMO) template on a silicon substrate of a body silicon-on-insulator (SOI) wafer to create a heterostructure,'}oxidizing the device silicon layer underlying the epitaxial TMO template by annealing the sample at an elevated temperature in oxygen resulting in complete post-deposition oxidation of the device silicon layer.2. The method of claim 1 , wherein the epitaxial TMO template includes at least one of strontium titanate and barium titanate.3. The method of claim 1 , wherein the epitaxial TMO template is grown in a pattern to form at least one monolithic strip waveguide.4. The method of claim 3 , wherein barium titanate is formed on a portion of the epitaxial TMO template.5. The method of claim 1 , wherein the device silicon layer has a thickness greater than or equal to 200 angstrom (Å).6. The method of claim 1 , wherein the device silicon layer has a thickness of from 45 Å to less than 200 Å.7. The method of claim 1 , wherein growing the epitaxial layer includes heating the body SOI wafer to a temperature at or above to 600° C. with a ...

METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME

A method of forming a metal oxide layer and a magnetic memory device includes a post-oxidation process in which a process cycle is performed at least once, which includes depositing a metal layer on a magnetic layer and oxidizing the metal layer. 1. A method of forming an interface perpendicular magnetic anisotropic (IPMA) magnetic tunnel junction including a magnetic layer and a tunnel insulating layer ,wherein forming the tunnel insulating layer comprises sequentially performing a post-oxidation process and a stabilizing process, andthe post-oxidation process comprises performing at least once a process cycle, the process cycle comprising depositing a metal layer on the magnetic layer and oxidizing the metal layer.2. The method of claim 1 , wherein the depositing of the metal layer comprises a DC sputtering process using a DC power.3. The method of claim 2 , wherein performing the post-oxidation process comprises repeating the process cycle a predetermined number of times claim 2 , andwherein an output level of the DC power in the DC sputtering process increases as the process cycle is repeated.4. The method of claim 2 , wherein performing the post-oxidation process comprises repeating the process cycle a predetermined number of times claim 2 , andwherein a deposition thickness of the metal layer increases as the process cycle is repeated.5. The method of claim 2 , wherein performing the post-oxidation process comprises repeating the process cycle a predetermined number of times claim 2 , andwherein an output level of the DC power in the DC sputtering process and a deposition thickness of the metal layer increase as the process cycle is repeated.6. The method of claim 2 , wherein the DC sputtering process is performed using at least one of tantalum claim 2 , magnesium claim 2 , ruthenium claim 2 , iridium claim 2 , platinum claim 2 , palladium claim 2 , titanium claim 2 , aluminum claim 2 , magnesium zinc claim 2 , hafnium claim 2 , or magnesium boron as a ...

ELECTRONIC DEVICES WTH TRANSPARENT CONDUCTING ELECTRODES, AND METHODS OF MANUFACTURE THEREOF

An embodiment of a transparent conducting electrode includes a first non-conductive layer formed from a first non-conductive material, a conductive layer, and a second non-conductive layer formed from a second non-conductive material that is different from the first non-conductive material. One or more of the transparent conducting electrodes may be incorporated into electronic devices such as solar cells, light emitting diodes, electrochromic devices, liquid crystal displays, and other devices. 1. An electronic device comprising:a substrate having a substrate top surface; anda transparent conducting electrode coupled to the substrate top surface, wherein the transparent conducting electrode includes a first non-conductive layer formed from a first non-conductive material, a conductive layer on the first non-conductive layer and formed from an electrically conductive material, and a second non-conductive layer on the conductive layer and formed from a second non-conductive material that is different from the first non-conductive material.2. The device of claim 1 , wherein the first and second non-conductive materials are selected from aluminum oxide (AlO) claim 1 , barium oxide/tellurium oxide (BaO—TeO) claim 1 , indium tin oxide (InSnO) claim 1 , cerium oxide (CeO) claim 1 , nickel oxide (NiO) claim 1 , niobium oxide (NbO) claim 1 , silicon dioxide (SiO) claim 1 , tin oxide (SnO) claim 1 , tantalum oxide (TaO) claim 1 , tungsten oxide (WO) claim 1 , zinc oxide (ZnO) claim 1 , chromium oxide (CrO) claim 1 , manganese oxide (MnO) claim 1 , titanium oxide (TiO) claim 1 , zirconium oxide (ZrO) claim 1 , boron bismuth oxide (BBiO) claim 1 , indium tin oxide (ITO) claim 1 , fluorine doped tin oxide (FTO) claim 1 , aluminum doped zinc oxide (AZO) claim 1 , indium-doped cadmium-oxide claim 1 , and a doped metal oxide.3. The device of claim 1 , wherein the first and second non-conductive materials are selected from a nitride claim 1 , a metal-nitride claim 1 , a ...

DEPOSITION OF OXIDE THIN FILMS

Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer. 1. A method for selectively depositing a thin film on a first surface of a substrate relative to a second surface , the method comprising:contacting the first and second surfaces of the substrate with a first vapor phase precursor;exposing the substrate to a purge gas or vacuum after contacting the first and second surfaces of the substrate with the first vapor phase precursor; and{'sub': '2', 'contacting the first and second surfaces of the substrate with a second vapor phase precursor comprising molecular oxygen (O) after exposing the substrate to the purge gas or vacuum;'}wherein the thin film is thereby selectively deposited on the first surface of the substrate relative to the second surface;wherein the thin film comprises an insulating metal oxide; andwherein the second surface comprises organic species.2. The method of claim 1 , wherein the first surface is a substantially different material from the second surface.3. The method of claim 1 , further comprising exposing the substrate to a purge gas or vacuum after contacting the substrate with the second vapor phase precursor comprising molecular oxygen.4. The method of claim 1 , wherein the second surface comprises a self-assembled monolayer (SAM).5. The method of claim 1 , wherein a thickness or amount of the thin film deposited on the second surface is less than about 50% of a thickness or amount of the thin film selectively deposited on the first surface of the substrate.6. The method of claim 1 , wherein the ...

TARGET FOR BARIUM-SCANDATE DISPENSER CATHODE

The invention relates to the field of production of barium-scandate dispenser cathodes or other barium-scandate materials. A target () containing a mixture of BaO, CaO, AlOand ScOtends to be more stable, the higher the scandia (scandium oxide) content is. However, an increased scandia content results in a reduced emission capability. A destabilizing effect of BaO and CaO reactions is counteracted by the more inert ScOand also AlOcomponents, as not only an increased scandia content stabilizes the material but also an increased alumina (aluminum oxide) content improves the stability. 1. A deposition apparatus comprising a target material , the target material comprising:{'sub': 2', '3', '2', '3, 'a mixture of barium oxide BaO, calcium oxide CaO, aluminum oxide AlOand scandium oxide ScO,'}{'sub': 2', '3', '2', '3, 'wherein the molar ratio of BaO:CaO:AlO:ScOis b:c:x:y with 2≤b≤5, 1≤c≤3, 2≤x+y≤b+c and 0.1≤y≤1; and'}{'sub': 2', '5, 'BaScAlO, wherein the target material is configured for physical thin film deposition in a production of barium-scandate dispenser cathodes or other barium-scandate materials.'}2. The deposition apparatus according to claim 1 , wherein the target material further comprises one or more oxide selected from the group consisting of strontium oxide SrO claim 1 , lanthanum oxide LaO claim 1 , yttrium oxide YOand europium oxide EuOin addition to the barium oxide claim 1 , and/or one or more oxides of one or more rare earth elements or a mixture of oxides of rare earth elements with scandium as main rare earth element in addition to the scandium oxide.3. The deposition apparatus according to claim 1 , wherein 0.1 Подробнее

PVD PROCESSING METHOD AND PVD PROCESSING APPARATUS

Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target. 1. A PVD processing method comprising:a first process of making an opening of a shield, which is provided between a first target containing a metal oxide as a main component and a second target containing a metal constituting the metal oxide as a main component and a stage on which a substrate as a film formation object is placed, coincide with the first target so as to expose the first target to the stage, and bringing the opening close to the first target;a second process of performing sputtering using the first target;a third process of making the opening of the shield coincide with the second target so as to expose the second target to the stage, and bringing the opening close to the second target; anda fourth process of performing sputtering using the second target.2. The PVD processing method of claim 1 , further comprising:a fifth process of moving the shield to a position located away from the first target and the second target; anda sixth process of performing sputtering using the second target after the fifth process.3. The PVD processing method of claim 2 , wherein claim 2 , in the sixth process claim 2 , the sputtering is performed ...

METAL OXIDE THIN FILM, ORGANIC ELECTROLUMINESCENCE ELEMENT INCLUDING THE THIN FILM, SOLAR CELL, AND THIN FILM FABRICATION METHOD

Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×10cmand less than or equal to 2.3×10cm, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material includig calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7. 19-. (canceled)10. A C12A7 electride thin film , wherein:{'sup': 18', '−3', '21', '−3, 'an electron density of the thin film is greater than or equal to 2.0×10cmand less than or equal to 2.3×10cm;'}the thin film exhibits light absorption at a photon energy position of 4.6 eV; andthe thin film is amorphous.11. The thin film as claimed in claim 10 , comprising:calcium, aluminum, and oxygen;wherein a calcium to aluminum molar ratio is 13:12 to 11:16.12. The thin film as claimed in claim 10 , wherein a light absorption value of the thin film at the photon energy position of 4.6 eV is greater than or equal to 100 cm.13. The thin film as claimed in claim 10 , wherein the thin film has a thickness less than or equal to 10 μm.14. The thin film as claimed in claim 10 , wherein the thin film is formed on a glass substrate.15. (canceled)16. An amorphous thin film claim 10 , wherein:the thin film is fabricated using a target made of a crystalline C12A7 electride;the thin film comprises an electride of an amorphous solid material comprising calcium, aluminum, and oxygen; andan Al/Ca molar ratio of the thin film is 0.5 to 4.7.17. The thin film as claimed in wherein:{'sup': 18', '−3', '21', '−3, 'the thin film exhibits an electron density of greater than or equal to 2.0×10cmand less than or equal to 2.3×10cm; and'}the thin film exhibits a exhibiting light absorption at a photon energy position of 4.6 eV.18. The thin film as claimed in claim 16 , wherein the thin film has an F ...

Methods and apparatus for processing a substrate

Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

OPTICAL MEMBERS, METHOD FOR PRODUCING THE SAME AND DISPLAY DEVICES COMPRISING THE SAME

An optical member includes a transparent substrate, an alumina-based first transparent ceramic layer on the transparent substrate, and an alumina-based second transparent ceramic layer on the alumina-based first transparent ceramic layer such that the alumina-based first transparent ceramic layer is between the transparent substrate and the alumina-based second transparent ceramic layer. A refractive index of the alumina-based second transparent ceramic layer is smaller than a refractive index of the alumina-based first transparent ceramic layer. The alumina-based first transparent ceramic layer and the alumina-based second transparent ceramic layer may have independent compositions, and the independent compositions may each be a silica-free composition. 1. An optical member , comprising:a transparent substrate;an alumina-based first transparent ceramic layer on the transparent substrate; andan alumina-based second transparent ceramic layer on the alumina-based first transparent ceramic layer such that the alumina-based first transparent ceramic layer is between the transparent substrate and the alumina-based second transparent ceramic layer,wherein the alumina-based first transparent ceramic layer and the alumina-based second transparent ceramic layer have independent compositions, and the independent compositions are each a silica-free composition,wherein a refractive index of the alumina-based second transparent ceramic layer is smaller than a refractive index of the alumina-based first transparent ceramic layer.2. The optical member of claim 1 , whereinthe alumina-based first transparent ceramic layer has a refractive index of about 1.55 to about 1.65, andthe alumina-based second transparent ceramic layer has a refractive index of about 1.3 to about 1.5.3. The optical member of claim 1 , wherein a density of the alumina-based second transparent ceramic layer is smaller than a density of the alumina-based first transparent ceramic layer.4. The optical member of ...

Apparatus and Method of Treating a Lithium-Ion-Battery Part

An apparatus ( 100 ) for treating a lithium-ion battery part, such as an electrode ( 212 ), is disclosed as including deposition devices ( 203, 204, 205, 206 ) for depositing lithium onto the battery part by physical vapour deposition and/or chemical vapour deposition. A method of treating a lithium-ion battery part is disclosed as including providing a lithium-ion battery part, and depositing lithium onto said component by physical vapour deposition and/or chemical vapour deposition.

Method for forming film layer and substrate including the film layer

The invention provides a method of forming a film layer and a substrate comprising the film layer, and belongs to the field of film fabricating technology. The invention can solve the problem that, by using the method of forming a film layer in the prior art, defective film layers is apt to occur. The inventive method of forming a film layer comprises forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple steps to constitute the film layer, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately. The inventive substrate comprises a film layer formed by the above method. The invention may be used for improving the quality of the film layer.

Apparatus of Reactive Cathodic Arc Evaporator for Plating Lithium-Compound Thin Film and Method Thereof

An apparatus is provided for plating a lithium (Li)-compound thin film. In the thin film, Li is obtained through thermal evaporation, and titanium (Ti) or other metal by using arc plasma. The elements converted into gas phase are co-deposited in a plasma environment with a reaction gas (oxygen) to be activated as excited atoms or molecules for reaction. In the end, all of the constituent elements are deposited on a substrate to form the Li-compound thin film. Thus, reaction efficiency is high with a fast deposition rate. The composition ratio of each element is independently determined to control its yield according to the requirement. Hence, the present invention greatly enhances the fabrication rate with lowered production cost for applications in the thin-film battery industries.

MAGNESIUM GLASS

A method of making magnesium glass including depositing a film of transparent crystalline MgO on glass at a temperature between 550° C. and 1000° C. by non-sintering, electron-beam evaporation. Such magnesium glass having an ideal grain size for a high Vickers hardness value. 1. A method of making magnesium glass comprising steps of:depositing a film of crystalline MgO on glass at a temperature between 550° C. and 1000° C.2. The method of claim 1 , where the MgO is highly textured.3. The method of claim 1 , where the MgO film has grains ranging between 58 nm and 250 nm.4. The method of claim 1 , where said magnesium glass is fully transparent.5. The method of claim 1 , where said magnesium glass has a hardness value greater than 800 Vickers.6. The method of claim 17 , where said hardness value of said magnesium glass is greater than 1200 Vickers.7. The method of claim 1 , where said hardness value of said magnesium glass is greater than 1400 Vickers.8. The method of claim 1 , where said magnesium glass has a roughness value of less than 10 nm.9. The method of claim 1 , where said magnesium glass has a roughness value of less than 5 nm.10. The method of claim 1 , where said magnesium glass is annealed from between 1 and 36 hours.11. The method of claim 1 , where the Hall-Petch effect causes hardness.12. The method of claim 1 , where said MgO film is deposited by electron beam evaporation.13. The method of claim 1 , where said MgO film passes a silica sand vibration test for 10000 cycle.14. The method of claim 1 , where said MgO film is deposited by a non-sintering process.15. The method of claim 1 , where said MgO film is smooth.16. The method of making magnesium glass comprising:loading batches of substrate onto a substrate heater;heating the substrate with the substrate heater to a controlled temperature;depositing MgO film on the substrate; andincreasing the MgO film grain size.17. The method of claim 1 , further comprising increasing a hardness value of the ...

Method of making ceramic glass

A method is provided for manufacturing ceramic glass, including sapphire glass, for use in display covers in smartphones, computers, and watches, as well as for use as substrates on which semiconductor films can be deposited for a wide range of electronic applications, including solar cells, LEDs, and FETs.

DIELECTRIC FILM AND ELECTRONIC COMPONENT

A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°. 1. A dielectric film , comprising an alkaline earth metal oxide having a NaCl type crystal structure as a main component , whereinthe dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, andin a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.2. The dielectric film according to claim 1 , whereinthe dielectric film contains at least one element selected from the group consisting of Ta, Nb, V, Hf, Zr, Ti and Zn as a subcomponent.3. The dielectric film according to claim 2 , whereinwhen the total content of the subcomponents is set as x, the x is in the range of 0 mol % Подробнее

DIELECTRIC THIN FILM AND ELECTRONIC COMPONENT

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as Cand the area occupied by the columnar structure B is set as C, the relationship between Cand Csatisfies 0.4≦C/C≦1.1. 1. A dielectric thin film comprising MgO as a main component , whereinthe dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and{'sub': A', 'B', 'A', 'B', 'B', 'A, 'in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as Cand the area occupied by the columnar structure B is set as C, the relationship between Cand Csatisfies 0.4≦C/C≦1.1.'}2. The dielectric thin film according to claim 1 , wherein{'sup': '+', 'at least two columnar structures B are present, and the columnar structure B is a columnar structure including at least one columnar structure B with one or more triple junctions, and'}{'sup': '+', 'sub': 'B', 'the columnar structure B is included in an amount of 50% or more of the area Coccupied by the columnar structure B.'}3. An electronic component comprising the dielectric thin film according to .4. An electronic component comprising the dielectric thin film according to . In order to cope with the requirements in the communication with a further high-speed and large capacity of mobile communication devices typified by smart phones and tablets, the MIMO technology (Multi-Input Multi-Output) using multiple frequency bands at the same time is beginning to be put into ...

OXIDE SUPERCONDUCTING WIRE

An oxide superconducting wire, includes a laminate including a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions, and a metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate. 1. An oxide superconducting wire , comprising:a laminate comprising a base material, an intermediate layer, and an oxide superconducting layer, the intermediate layer being laminated on a main surface of the base material, the intermediate layer being constituted of one or more layers having an orientation, the intermediate layer having one or more first non-orientation regions extending in a longitudinal direction of the base material, the oxide superconducting layer being laminated on the intermediate layer, the oxide superconducting layer having a crystal orientation controlled by the intermediate layer, the oxide superconducting layer having second non-orientation regions located on the first non-orientation regions; anda metal layer which covers at least a front surface and side surfaces of the oxide superconducting layer in the laminate.2. The oxide superconducting wire according to claim 1 , wherein the main surface of the base material or a main surface of any one layer in the intermediate layer has orientation inhibition regions claim 1 , and the orientation inhibition regions are regions that inhibit crystal orientations ...

METHODS OF FORMING MGO BARRIER LAYER

A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer. 1. A method of making an MgO barrier layer for a TMR sensor , the method comprising:depositing a first MgO-source layer from an Mg target;depositing a second MgO-source layer on the first MgO-source layer using a reactive oxide deposition process in the presence of oxygen from an Mg target;depositing a third MgO-source layer on the second MgO-source layer from an Mg target; andannealing the first MgO-source layer, the second MgO-source layer, and the third MgO-source layer to form an MgO barrier layer.2. The method of claim 1 , wherein the step of depositing the second MgO-source layer is with O.3. The method of claim 1 , wherein the step of depositing the second MgO-source layer is with Oions.4. The method of claim 1 , wherein the step of depositing the first MgO-source layer comprises depositing a first Mg layer.5. The method of claim 1 , wherein the step of depositing the third MgO-source layer comprises depositing a third Mg layer.6. The method of claim 1 , wherein the step of depositing the second MgO-source layer comprises depositing an Mg layer in the presence of oxygen.7. The method of claim 6 , wherein the step of depositing the second MgO-source layer further comprises utilizing a sputtering gas being selected from Ar claim 6 , Kr claim 6 , Xe claim 6 , He claim 6 , and Ne.8. A method of making an MgO barrier layer for a TMR sensor claim 6 , the method comprising:depositing a first Mg layer in a first chamber;depositing a ...

STRUCTURE AND METHOD TO FABRICATE HIGHLY REACTIVE PHYSICAL VAPOR DEPOSITION TARGET

A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target. 1. A physical vapor deposition (PVD) target comprising:a body comprised of material that is reactive with an oxygen containing atmosphere; anda non-reactive cap layer encapsulating at least a sputter surface of the body, wherein the non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.2. The PVD target of claim 1 , wherein a composition for the body of material that is reactive with an oxygen containing atmosphere is selected from the group consisting of magnesium claim 1 , magnesium oxide claim 1 , lanthanum and combinations thereof.3. The PVD target of claim 2 , wherein a composition for the non-reactive cap layer is selected from the group consisting of titanium oxide (TiO) claim 2 , aluminum oxide (AlO) claim 2 , tantalum nitride (TaN) claim 2 , silicon oxide (SiO) claim 2 , chromium oxide claim 2 , silicon nitride claim 2 , tantalum oxide claim 2 , and combinations thereof.4. The PVD target of claim 2 , wherein the composition for the non-reactive cap layer is carbon claim 2 , graphene claim 2 , diamond like carbon (DLC) claim 2 , amorphous carbon and combinations thereof.5. The PVD target of claim 1 , wherein the non-reactive cap layer has a thickness ranging from 1 nm to 30 nm.6. The PVD target of claim 5 , wherein the non-reactive cap layer is present on sidewalls of the body as well as said sputter surface of said body.7. The PVD target of claim 6 , wherein thickness of the non-reactive cap layer is conformal on said sidewalls and said upper surface of said body.8. A method for forming a PVD target comprising:providing a target body comprised of ...

Vapour deposition method for preparing crystalline lithium-containing compounds

A vapour deposition method for preparing a crystalline lithium-containing transition metal oxide compound comprises providing a vapour source of each component element of the compound, including at least a source of lithium, a source of oxygen, and a source or sources of one or more transition metals; heating a substrate to between substantially 150° C. and substantially 450° C.; and co-depositing the component elements from the vapour sources onto the heated substrate wherein the component elements react on the substrate to form the crystalline compound.

METHOD OF STRENGTHENING AN OPTICAL ELEMENT

According to various aspects and embodiments, a system and method for providing an optical element is disclosed. In one example, the optical element includes a substrate formed from a Nanocomposite Optical Ceramic (NCOC) material that includes a first oxide nanograin material dispersed in a second oxide nanograin material, and a compressive layer of the NCOC material formed on a surface of the substrate. 1. An optical element , comprising:a substrate formed of a Nanocomposite Optical Ceramic (NCOC) material including a first oxide nanograin material dispersed in a second oxide nanograin material; anda compressive layer of the NCOC material formed on a surface of the substrate.2. The optical element of claim 1 , wherein the compressive layer of the NCOC material has a microstructure different than a microstructure of the substrate.3. The optical element of claim 2 , wherein the microstructure of the substrate has a grain size that is substantially uniform throughout the substrate and is in a range of about 100 nm to about 200 nm.4. The optical element of claim 2 , wherein the microstructure of the compressive layer has a columnar polycrystalline grain structure with grain boundaries extending approximately perpendicular to the surface of the substrate.5. The optical element of claim 1 , wherein the optical element has a Knoop hardness measured on a surface of the compressive layer of at least 2000 kg/mmfor a 50 g load.6. The optical element of claim 1 , wherein the optical element has a hardness value that is greater than a hardness value of an optical element comprising a substrate of the NCOC material formed without the compressive layer.7. The optical element of claim 1 , wherein the optical element has a flexural strength value of at least 600 MPa at room temperature.8. The optical element of claim 1 , wherein the optical element has a flexural strength value that is greater than a flexural strength value of an optical element comprising a substrate of the NCOC ...

FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A film structure includes a substrate () which is a silicon substrate including an upper surface () composed of a (100) plane, an alignment film () which is formed on the upper surface () and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film () which is formed on the alignment film () and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF) between the alignment film () and the conductive film () is greater than an average interface roughness of an interface (IF) between the substrate () and the alignment film (). 1. A film structure comprising:a silicon substrate including a main surface composed of a (100) plane;a first film that is formed on the main surface and includes a first zirconium oxide film which has a cubic crystal structure and is (100)-oriented; anda conductive film that is formed on the first film and includes a platinum film which has a cubic crystal structure and is (100)-oriented, whereina first average interface roughness of a first interface between the first film and the conductive film is greater than a second average interface roughness of a second interface between the silicon substrate and the first film.2. The film structure according to claim 1 , whereinthe first film includesa film portion formed on the main surface, anda plurality of protrusion portions each protruded from an upper surface of the film portion,the film portion includes a second zirconium oxide film which has a cubic crystal structure and is (100)-oriented, andeach of the plurality of protrusion portions includes a third zirconium oxide film which has a cubic crystal structure and is (100)-oriented.3. The film structure according to claim 2 , whereina cross-sectional shape of the protrusion portion perpendicular to a first direction along the main surface is a triangular shape, anda width of the protrusion portion in a second ...

METHOD OF STRENGTHENING AN OPTICAL ELEMENT

According to various aspects and embodiments, a system and method for providing an optical element is disclosed. In one example, the optical element includes a substrate formed from a Nanocomposite Optical Ceramic (NCOC) material that includes a first oxide nanograin material dispersed in a second oxide nanograin material, and a compressive layer of the NCOC material formed on a surface of the substrate. 1. A method for treating the surface of an optical substrate ,providing an optical substrate formed of a Nanocomposite Optical Ceramic (NCOC) material including a first oxide nanograin material dispersed in a second oxide nanograin material; anddepositing a compressive layer of the NCOC material on a surface of the optical substrate,wherein the compressive layer of the NCOC material has a microstructure different than a microstructure of the optical substrate, and wherein the microstructure of the compressive layer has a columnar polycrystalline grain structure with grain boundaries extending approximately perpendicular to the surface of the optical substrate.2. The method of claim 1 , wherein depositing includes physical vapor deposition.3. The method of claim 2 , wherein the physical vapor deposition includes sputtering.4. The method of claim 3 , wherein the sputtering includes radio frequency (RF) magnetron sputtering.5. The method of claim 4 , wherein the compressive layer is deposited at a pressure in a range of about 1 mTorr to about 5 mTorr.6. The method of claim 4 , further comprising depositing a protective layer of one of the first and the second oxide nanograin materials onto the compressive layer.7. The method of claim 1 , wherein the microstructure of the optical substrate has a grain size that is substantially uniform throughout the optical substrate and is in a range of about 100 nm to about 200 nm.8. The method of claim 1 , wherein an optical element created by the optical substrate and the compressive layer has a hardness value that is greater than ...

METHOD OF DEPOSITING MATERIAL ON A SUBSTRATE

A method of depositing a material on a substrate is provided. The method includes generating a plasma remote from one or more sputter targets suitable for plasma sputtering, wherein at least one distinct region of the one or more targets includes an alkali metal, alkaline earth metal, alkali metal containing compound, alkaline earth metal containing compound or a combination thereof; generating sputtered material from the target or targets using the plasma; and depositing the sputtered material on the substrate, the working distance between the target and the substrate being within +/−50% of the theoretical mean free path of the system. 1. A method of depositing a material on a substrate , the method comprising:generating a plasma remote from one or more sputter targets suitable for plasma sputtering, wherein at least one distinct region of the one or more targets comprises an alkali metal, alkaline earth metal, alkali metal containing compound, alkaline earth metal containing compound or a combination thereof;confining the plasma to the target or targets;generating sputtered material from the target or targets using the confined plasma; anddepositing the sputtered material on the substrate, the working distance between the target and the substrate being within +/−50% of the theoretical mean free path of the system.2. The method of claim 1 , wherein the working distance is shorter than the mean free path of the system.3. The method of claim 1 , wherein the alkali metal containing compound or alkaline earth metal containing compound forms as crystalline material in situ claim 1 , as the material is deposited.4. The method of claim 3 , wherein the alkali metal containing compound or alkaline earth metal containing compound takes the form of a layered oxide material.5. The method of claim 1 , wherein the working distance is longer than a lower bound defined by the working distance at which the energy of the deposition would cause damage to the substrate claim 1 , or ...

Vapour deposition method for preparing crystalline lithium-containing compounds

결정질 리튬-함유 전이 금속 산화물 화합물을 준비하기 위한 기상 증착 방법은 적어도 리튬 소스, 산소 소스, 및 하나 또는 그 초과의 전이 금속들의 소스 또는 소스들을 포함하는, 상기 화합물의 각각의 컴포넌트 엘리먼트의 다양한 소스를 제공하는 단계; 기판을 실질적으로 150℃와 실질적으로 450℃ 사이로 가열하는 단계; 및 기상 소스들로부터의 컴포넌트 엘리먼트들을 가열된 기판상에 동시-증착하는 단계를 포함하고, 컴포넌트 엘리먼트들은 결정질 화합물을 형성하기 위하여 기판상에서 반응한다. The vapor deposition method for preparing a crystalline lithium-containing transition metal oxide compound comprises various sources of each component element of the compound, including at least a lithium source, an oxygen source, and a source or sources of one or more transition metals. Providing; Heating the substrate to substantially between 150 ° C. and substantially 450 ° C .; And co-depositing the component elements from the vapor sources onto the heated substrate, wherein the component elements react on the substrate to form a crystalline compound.

Metal bipolar plate coating and preparation method thereof

本发明公开一种金属双极板涂层及其制备方法，涉及氢燃料电池、电解水制氢技术,电渗析，双极膜等领域。它采用基材、打底层、抗氧化层、贵金属掺杂层的结构设计，其中打底层沉积在基材上，抗氧化层沉积在打底层上，贵金属掺杂层沉积在抗氧化层上。打底层的主要成分为钛及其铬、镍、铝、钨、铌中的一种或多种；抗氧化层的主要成分为铈、镧、铟、锡、锑、钽、铌、锰、钴、镍中的一种或多种；贵金属掺杂层的成分为钛、石墨或及其掺杂的贵金属钌、铱、铂、金、银中的一种或多种。制得的金属双极板导电性好，耐腐蚀性强，接触电阻小于3mΩ·cm 2 ,腐蚀电流低于0.5μA/cm 2 ,腐蚀电位大于0.5V,加速试验测试双极板涂层寿命超过10000小时，符合大规模使用要求。

Indium tin oxide target, method of manufacturing the same and transparent electrode manufactured by using the same

본 발명은 산화 인듐 분말, 산화 주석 분말, 및 칼슘 및 알루미늄을 함유한 산화물 분말을 혼합하여 슬러리를 준비하는 슬러리 준비 단계, 상기 슬러리를 밀링하고 건조하여 건조 분말을 준비하는 분말화 단계, 상기 건조 분말을 성형하여 성형체를 제조하는 성형 단계 및 상기 성형체를 소결하는 소결 단계를 포함하는 산화 인듐 주석 타겟의 제조 방법을 제공한다. 또한 본 발명은 인듐 원자 대비 칼슘 및 알루미늄 원자의 합이 0.001 내지 10 at%가 되도록 칼슘 알루미네이트를 함유한 산화 인듐 주석 타겟을 제공한다. 본 발명의 제조 방법에 의해 제조된 타겟은 상대 밀도가 99% 이상을 나타내며, 스퍼터링시 노쥴 및 아킹의 발생이 감소하여 장시간 성막이 가능하다. The present invention provides a slurry preparation step of preparing a slurry by mixing indium oxide powder, tin oxide powder, and oxide powder containing calcium and aluminum, a powdering step of milling and drying the slurry to prepare a dry powder, the dry powder It provides a method for producing an indium tin oxide target comprising a molding step of forming a molded body to form a molded product and a sintering step of sintering the molded body. The present invention also provides an indium tin oxide target containing calcium aluminate such that the sum of calcium and aluminum atoms relative to indium atoms is 0.001 to 10 at%. The target produced by the manufacturing method of the present invention has a relative density of 99% or more, and the generation of nodules and arcing during sputtering is reduced, and thus film formation is possible for a long time.

With the element of anti-corrosion layer protection and the method for manufacturing the element

本发明涉及以耐腐蚀层保护的元件及制造该元件的方法，其中的一种燃气轮机发动机元件，包括用耐高温材料制成的基体和耐腐蚀层。所述耐腐蚀层包含分子式为M x V y O z 的难熔金属钒酸盐，其中M选自碱土金属、IV族和V族过渡金属、稀土金属、以及它们的组合，其中z=x+2.5y，z=1.5x+2.5y，z=2x+2.5y或z=2.5x+2.5y。

Element protected by anti-corrosion layer and production method thereof

本发明涉及以耐腐蚀层保护的元件及制造该元件的方法，其中的一种燃气轮机发动机元件，包括用耐高温材料制成的基体和耐腐蚀层。所述耐腐蚀层包含分子式为M x V y O z 的难熔金属钒酸盐，其中M选自碱土金属、IV族和V族过渡金属、稀土金属、以及它们的组合，其中z=x+2.5y，z=1.5x+2.5y，z=2x+2.5y或z=2.5x+2.5y。

Protective metal oxyfluoride coatings

一种包含具有保护性涂层的主体的物件。此保护性涂层是包含金属氟氧化物的薄膜。此金属氟氧化物具有实验式M x O y F z ，其中M是金属，y具有的值为x值的0.1至1.9倍，z具有的值为x值的0.1至3.9倍。此保护性涂层具有1至30微米的厚度与小于0.1％的孔隙度。

Method for creating a mineral trioxide aggregate material with improved biological effects

A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

High-power pulsed magnetron sputtering method is used to form memory

本文中阐述使用高功率脉冲磁控管溅镀法形成存储器。一个或一个以上方法实施例包含使用高功率脉冲磁控管溅镀法HIPIMS在结构上形成电阻式存储器材料，其中所述电阻式存储器材料是在具有大约400℃或400℃以下的温度的环境中在所述结构上形成。

Method for producing thin film for optical information recording medium

Lithium titanate structures for lithium ion batteries formed using element selective sputtering

A method is provided in which a lithium titanate precursor structure is subjected to element selective sputtering to form a lithium titanate structure including a lithium titanate core and a conformal layer on the lithium titanate core, wherein the conformal layer includes titanium oxide. A method of preparing an electrode for a lithium ion battery, wherein the electrode includes lithium titanate structures, is also provided.

A kind of method and substrate forming rete

本发明提供一种形成膜层的方法和基板，属于膜层制备技术领域，其可解决现有的形成膜层方法易出现膜层不良的问题。本发明的形成膜层的方法包括在基板上形成第一层膜；对所述第一层膜进行第一次清洗；在所述第一层膜上形成第二层膜，所述第二层膜的材料与第一层膜的材料相同；对所述第二层膜进行第二次清洗。本发明的基板包括由上述形成膜层的方法制得的膜层。本发明可用于提升膜层品质。

Sputtering target and process for producing the same, thin film for optical information recording medium and process for producing the same

Provided is a sputtering target containing a compound having as its principal component zinc oxide satisfying A X B Y O( KaX + KbY)/2 (ZnO) m , 0<X<2, Y = 2-X, 1≦m, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, as well as zinc chalcogenide, and having a relative density of 90% or more and a bulk resistance value of 0.1 Ωcm or less. As a result, obtained is a high density sputtering target that enables high speed deposition upon reducing the influence of heat on a substrate upon forming a film via sputtering, adjustment for thinning the film thickness, and reduction of the generation of particles (dust) and nodules during sputtering, and in which the crystal grains are fine, as well as the manufacturing method thereof. In particular, obtained is a thin film for an optical information recording medium optimum for use as a protective film, as well as the manufacturing method thereof.

Method for producing an abrasion resistant coated substrate product

The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate, a chemically vapor deposited first interlayer bonded to the substrate and a chemically vapor deposited outer layer of substantially optically transparent diamond-like carbon bonded to the interlayer and away from the substrate.

Sputtering target and oxide semiconductor

溅射靶材由包含铟(In)元素、锌(Zn)元素和添加元素(X)的氧化物构成。添加元素(X)由选自钽(Ta)、锶(Sr)、铌(Nb)中的至少1种元素构成。溅射靶材的各元素的原子比满足式(1)至(3)。溅射靶材的相对密度为95％以上。0.4≤(In+X)/(In+Zn+X)≤0.8(1)、0.2≤Zn/(In+Zn+X)≤0.6(2)、0.001≤X/(In+Zn+X)≤0.015(3)。

Vapour deposition method for preparing crystalline lithium-containing compounds

A vapour deposition method for preparing a crystalline lithium-containing transition metal oxide compound comprises providing a vapour source of each component element of the compound, including at least a source of lithium, a source of oxygen, and a source or sources of one or more transition metals; heating a substrate to between substantially 150°C and substantially 450°C; and co-depositing the component elements from the vapour sources onto the heated substrate wherein the component elements react on the substrate to form the crystalline compound.

Method for forming film layer and substrate including the film layer

A method of forming a film layer and a substrate comprising the film layer to reduce occurrence of defects and improve the quality of the film layer are described. The method of forming a film layer comprises forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple steps to constitute the film layer, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately. The substrate comprises a film layer formed by the above method.

C12A7 thin film of electronic salt and C12A7 electronic salt film

Sputtering target and manufacturing method thereof, thin film for optical information recording medium and manufacturing method thereof

本発明は、Ａ、Ｂは其々異なる３価以上の陽性元素であり、その価数を其々Ｋａ、Ｋｂとしたとき、ＡＸＢＹＯ（ＫａＸ＋ＫｂＹ）／２（ＺｎＯ）ｍ、０＜Ｘ＜２、Ｙ＝２−Ｘ、１≦ｍを満たす酸化亜鉛を主成分とする化合物を含有し、さらにカルコゲン化亜鉛を含む、相対密度９０％以上、バルク抵抗値０．１Ωｃｍ以下であることを特徴とするスパッタリングターゲットに関する。スパッタリングによって膜を形成する際に、基板への加熱等の影響を少なくし、高速成膜ができ、また膜厚を薄く調整でき、さらにスパッタ時に発生するパーティクル（発塵）やノジュールを低減させ、品質のばらつきが少なく量産性を向上させることができ、かつ結晶粒が微細であり高密度のスパッタリンダターゲット及びその製造方法並びに、特に保護膜としての使用に最適である光情報記録媒体用薄膜及びその製造方法を得る。 In the present invention, A and B are different trivalent or more positive elements, and when the valences are Ka and Kb, respectively, AXBYO (KaX + KbY) / 2 (ZnO) m, 0 <X <2, It has a relative density of 90% or more and a bulk resistance value of 0.1 Ωcm or less, including a compound mainly composed of zinc oxide satisfying Y = 2-X and 1 ≦ m, and further containing zinc chalcogenide. The present invention relates to a sputtering target. When forming a film by sputtering, the influence of heating to the substrate is reduced, high-speed film formation is possible, the film thickness can be adjusted thinly, and particles (dust generation) and nodules generated during sputtering are reduced, A spattered target having a high density and having a small crystal grain size and a high density, a manufacturing method thereof, and a thin film for an optical information recording medium that is particularly suitable for use as a protective film The manufacturing method is obtained.

Protective metal fluoride coatings

물품은 보호 코팅을 갖는 본체를 포함한다. 보호 코팅은 금속 불산화물을 포함하는 박막이다. 금속 불산화물은 M x O y F z 의 실험식을 가지며, 여기서 M은 금속이고, y는 x 값의 0.1배 내지 1.9배의 값을 가지며, z는 x 값의 0.1배 내지 3.9배의 값을 갖는다. 보호 코팅은 1 내지 30 미크론의 두께 및 0.1% 미만의 다공률을 갖는다. The article includes a body having a protective coating. The protective coating is a thin film comprising metal fluoride. A metal fluoride has the empirical formula M x O y F z , where M is a metal, y has a value between 0.1 and 1.9 times the value of x, and z has a value between 0.1 and 3.9 times the value of x. . The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Forming memory using high power impulse magnetron sputtering

本文中阐述使用高功率脉冲磁控管溅镀法形成存储器。一个或一个以上方法实施例包含使用高功率脉冲磁控管溅镀法HIPIMS在结构上形成电阻式存储器材料，其中所述电阻式存储器材料是在具有大约400℃或400℃以下的温度的环境中在所述结构上形成。

Protective metal oxy-fluoride coatings

물품은 보호 코팅을 갖는 본체를 포함한다. 보호 코팅은 금속 불산화물을 포함하는 박막이다. 금속 불산화물은 M x O y F z 의 실험식을 가지며, 여기서 M은 금속이고, y는 x 값의 0.1배 내지 1.9배의 값을 가지며, z는 x 값의 0.1배 내지 3.9배의 값을 갖는다. 보호 코팅은 1 내지 30 미크론의 두께 및 0.1% 미만의 다공률을 갖는다.

Film structure and method for producing same

This film structure comprises: a substrate (11) which is a silicon substrate having an upper surface (11a) that is the (100) plane; an alignment film (12) which is formed on the upper surface (11a) and has a cubic crystal structure, while containing a zirconium oxide film oriented in the (100) direction; and a conductive film (13) which is formed on the alignment film (12) and has a cubic crystal structure, while containing a platinum film oriented in the (100) direction. The average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is higher than the average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

Preparation method of hydrated calcium silicate nano film

本发明公开了一种水化硅酸钙纳米薄膜的制备方法，即是利用磁控溅射法制备水化硅酸钙(C‑S‑H)纳米薄膜的方法，首先将一定钙硅比的水化硅酸钙粉末煅烧，然后将煅烧后的粉体利用钢模压制成靶材，之后利用磁控溅射技术在衬底表面沉积一定厚度的薄膜，最后将薄膜样品放入氢氧化钙饱和水溶液中浸泡，即可得到水化硅酸钙的纳米薄膜。本发明为微观尺度上水化硅酸钙微观形貌的观测、力学性能及耐久性能等方面的研究奠定了基础。

Vapor deposition material for the production of strontium /calcium composite oxide films

由通式以Sr 1-x Ca x O(其中，x为0.2~0.8的范围的值)表示的平均结晶粒径在1.0~90μm的范围的锶钙复合氧化物结晶粒子的多晶体形成的，平均细孔直径在0.01~0.50μm的范围的用于锶钙复合氧化物膜制备的蒸镀材料。本发明的蒸镀材料，其自身对水蒸气、二氧化碳气体的吸附性或与它们的反应性低，因而没有必要特别用被覆材料被覆表面。

Oxide superconducting wire

【課題】引張強度が優れた酸化物超電導線材を提供する。【解決手段】基板１１上に酸化物超電導層１３を有する超電導積層体１５と、超電導積層体１５の外周を覆うＣｕめっき層からなる安定化層１６と、を備える酸化物超電導線材１０であって、安定化層１６において、Ｃｕめっき層のビッカース硬さが７０〜１９５ＨＶの範囲であることを特徴とする。【選択図】図１ PROBLEM TO BE SOLVED: To provide an oxide superconducting wire having excellent tensile strength. An oxide superconducting wire 10 comprising: a superconducting laminate 15 having an oxide superconducting layer 13 on a substrate 11; and a stabilizing layer 16 made of a Cu plating layer covering the outer periphery of the superconducting laminate 15. In the stabilizing layer 16, the Cu plating layer has a Vickers hardness of 70 to 195 HV. [Selection diagram] Figure 1

C12A7 electride thin film manufacturing method and C12A7 electride thin film

Ｃ１２Ａ７エレクトライドの薄膜の製造方法であって、電子密度が２．０×１０１８ｃｍ−３〜２．３×１０２１ｃｍ−３の結晶質Ｃ１２Ａ７エレクトライドのターゲットを用いて、低酸素分圧の雰囲気下で、気相蒸着法により、基板上に成膜を行うことにより、非晶質Ｃ１２Ａ７エレクトライドの薄膜を形成することを特徴とする製造方法。 A method for producing a thin film of C12A7 electride using a crystalline C12A7 electride target having an electron density of 2.0 × 10 18 cm −3 to 2.3 × 102 1 cm −3 in a low oxygen partial pressure atmosphere. A method for producing an amorphous C12A7 electride thin film by depositing a film on a substrate by vapor deposition.

Oxide superconducting wire

An oxide superconducting wire which is provided with: a laminate that comprises a base, an intermediate layer which is laminated on a main surface of the base and is configured of one or more oriented layers, while having one or more first non-oriented regions extending in the length direction of the base, and an oxide superconducting layer which is laminated on the intermediate layer and has a crystal orientation controlled by the intermediate layer, while having second non-oriented region(s) positioned on the first non-oriented region(s) of the intermediate layer; and a metal layer that covers at least the front surface and the lateral surface of the oxide superconducting layer of the laminate.

Dielectric thin film and electronic component

Method for improving reducing resistance of ceramic PTC (positive temperature coefficient) thermosensitive element

一种提高陶瓷PTC热敏元件的抗还原性的方法，属于电子元器件制备技术领域。陶瓷PTC热敏元件为钛酸钡基陶瓷PTC热敏元件，抗还原性的方法是先将钛酸钡基陶瓷PTC热敏元件装入盛料盒本体中，再将装有钛酸钡基陶瓷PTC热敏元件的盛料盒本体装入磁控溅射设备，在盛料盒本体处于旋转状态下由磁控溅射设备将作为靶材的无机材料溅射到钛酸钡基陶瓷PTC热敏元件的表面而在其表面形成一层无机材料薄膜层，待磁控溅射完毕后，将盛料盒本体连同表面结合有无机材料薄膜层的钛酸钡基陶瓷PTC热敏元件取出并进行高温热处理。提高陶瓷PTC热敏元件抗恶劣环境的能力并且满足在含有还原氛环境下的服役要求；工艺简便，满足工业化放大生产要求。

Sputtering target and magnetic memory manufacturing method using the same

Potassium sodium niobate sputtering target and manufacturing method thereof

Methods and apparatus for processing a substrate

於此揭露用於處理基板的方法及設備。在一些實施例中，處理腔室包含：一腔室主體，該腔室主體界定一內部容積；一基板支撐件，該基板支撐件在該內部容積內支撐一基板；複數個陰極，該複數個陰極耦合至該腔室主體且具有對應的複數個標的以受噴濺至該基板上；及一屏蔽，該屏蔽可旋轉地耦合至該腔室主體的上方部分且具有至少一個孔洞以曝露受噴濺的該複數個標的之其中至少一者，及設置於該屏蔽的背側中的至少一個袋部以容納及覆蓋未受噴濺的該複數個標的之其中至少另一者，其中該屏蔽經配置以繞著該處理腔室的一中央軸旋轉及沿著該處理腔室的該中央軸線性移動。

Object in a lithographic apparatus

An object, such as a sensor for an immersion lithographic apparatus, has an outer layer which comes in contact with immersion liquid and wherein the outer layer has a composition including a rare earth element. There is also provided an immersion lithographic apparatus having such an object and a method for manufacturing such an object.

Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof

描述用于蒸发包括碱金属或碱土金属的材料及用于沉积所述材料于基板上的沉积装置。所述装置包含：第一腔室，所述第一腔室被配置以液化材料；阀，所述阀与第一腔室流体连通且在第一腔室下游，其中阀被配置以控制液化材料通过阀的流率；蒸发区，所述蒸发区与阀流体连通且在阀下游，其中蒸发区被配置以蒸发液化材料；及一或更多出口，所述一或更多出口用于将蒸发材料导向基板。

Abrasion wear resistant coated substrate product.

The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate (1), a chemically vapor deposited first interlayer (2) bonded to the substrate and a chemically vapor deposited outer layer (3) of substantially optically transparent diamond-like carbon bonded to the interlayer and away from the substrate.

Oxide superconducting wire

An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer on a substrate, and a stabilization layer which is a Cu plating layer covering the outer periphery of the superconducting laminate, and an average crystal grain size of the Cu plating layer is 3.30 µm or more and equal to or less than a thickness of the Cu plating layer.

Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof

A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.

Potassium sodium niobate sputtering target and method for producing same

相対密度が９５％以上であることを特徴とするニオブ酸カリウムナトリウムスパッタリングターゲット。Ｎｂ ２ Ｏ ５ 粉末、Ｋ ２ Ｃｏ ３ 粉末、Ｎａ ２ Ｃｏ ３ 粉末を混合し、この混合粉を粉砕して粒子径ｄ ５０ を１００μｍ以下とし、得られた粉砕粉を、不活性ガス又は真空雰囲気中、温度９００℃以上１１５０℃未満、荷重１５０～４００ｋｇｆ／ｃｍ ２ の条件下で、ホットプレス焼結することを特徴とするニオブ酸カリウムナトリウムスパッタリングターゲットの製造方法。本発明は、工業的に、スパッタリング法によるニオブ酸カリウムナトリウム膜を成膜することができる、高密度のニオブ酸カリウムナトリウムのスパッタリングターゲットを提供することを課題とする。

Thin film and method for making coating

一種包含具有保護性塗層之主體的物件。此保護性塗層是包含金屬氟氧化物的薄膜。此金屬氟氧化物具有M x O y F z 之實驗式，其中M是金屬，y具有值為0.1至1.9倍的x值，z具有值為0.1至3.9倍的x值。此保護性塗層具有1至30微米的厚度與小於0.1%之孔隙度。

Functional coating film for display substrate and manufacturing method thereof

An objective of the present invention is to form a functional coating film for providing high hardness and increasing or maintaining light transmittance with respect to a display substrate. The present invention provides the functional coating film for forming an aluminium oxide coating layer of 80nm or less on a glass substrate or a transparent polymer substrate.

Evaporator, deposition arrangement, deposition apparatus, and methods of operation thereof

【課題】アルカリ金属又はアルカリ土類金属を含む材料の蒸発及び当該材料の基板上への堆積のための堆積アレンジメントの提供。 【解決手段】材料を液化するために構成される第１のチャンバ１１０、第１のチャンバ１１０と流体連通され、且つ第１のチャンバ１１０の下流にあるバルブ１３０を含み、バルブ１３０はバルブ１３０を通る液化された材料の流量を制御するように構成されており、蒸発ゾーン１１４はバルブ１３０と流体連通され、且つ当該バルブの下流にあり、蒸発ゾーン１１４は液化した材料を蒸発させるために構成され、一又は複数の排出口１１６は蒸発した材料を基板４に向けるように構成されている堆積アレンジメント。 【選択図】図１

Sputtering target material and oxide semiconductor

本發明之濺鍍靶材含有包含銦(In)元素、鋅(Zn)元素及添加元素(X)之氧化物。添加元素(X)包含選自鉭(Ta)、鍶(Sr)、鈮(Nb)中之至少一種元素。濺鍍靶材之各元素之原子比滿足式(1)至(3)。濺鍍靶材之相對密度為95%以上。0.4≦(In＋X)/(In＋Zn＋X)≦0.8         (1)、0.2≦Zn/(In＋Zn＋X)≦0.6        (2)、0.001≦X/(In＋Zn＋X)≦0.015       (3)

object in a lithographic apparatus

Dielectric film and electronic unit

本发明的目的在于提供一种具有高的相对介电常数、Q值以及绝缘击穿电压的电介质膜以及使用该电介质组合物的电子部件。所述电介质膜其特征在于，所述电介质膜以具有NaCl型晶体结构的碱土金属氧化物为主成分，所述电介质膜在法线方向具有(111)取向的柱状结构，在所述电介质膜的Cu‑KαX射线衍射图中，(111)的衍射峰的半峰宽为0.3°～2.0°。

Dielectric film and electronic component

Oxide superconducting wire

本发明提供一种氧化物超导线材，其具备：在基板上具有氧化物超导层的超导层叠体、及作为覆盖于超导层叠体的外周的Cu镀层的稳定化层，Cu镀层的平均晶粒尺寸为3.30μm以上且为Cu镀层的厚度以下。

Protective metal oxyfluoride coating

Oxide superconducting wire

酸化物超電導線材であって、基材と、前記基材の主面上に積層され、配向性を有する１以上の層から構成されるとともに前記基材の長さ方向に沿って延びる一本以上の第１非配向領域を有する中間層と、前記中間層上に積層され、かつ、前記中間層により結晶配向制御されるとともに前記中間層の前記第１非配向領域上に位置する第２非配向領域を有する酸化物超電導層と、を備えた積層体と、前記積層体の、少なくとも前記酸化物超電導層の表面および側面を覆う金属層と、を備える。 One or more oxide superconducting wires, comprising a base material and one or more layers laminated on the main surface of the base material and having an orientation, and extending along the length direction of the base material An intermediate layer having a first non-oriented region, and a second non-oriented layer laminated on the intermediate layer and controlled in crystal orientation by the intermediate layer and positioned on the first non-oriented region of the intermediate layer A stack including an oxide superconducting layer having a region; and a metal layer covering at least a surface and a side surface of the oxide superconducting layer of the stack.

Method and apparatus for handling substrate

本文公开用于处理基板的方法和设备。在一些实施方式中，工艺腔室包含：腔室主体，限定内部空间；基板支撑件，在内部空间内支撑基板；多个阴极，耦合至腔室主体并且具有对应的多个靶，多个靶被溅射至基板上；和屏蔽物，可旋转地耦合至腔室主体的上部并且具有至少一个孔以暴露多个靶中至少一个被溅射的靶，和设置于屏蔽物的背侧中的至少一个袋以容纳和覆盖多个靶中至少另一个不被溅射的靶，其中屏蔽物经配置以绕着处理腔室的中央轴旋转并且沿着处理腔室的中央轴线性移动。