FERROELECTRIC FILM STACKED BODY, FERROELECTRIC MEMORY, PIEZOELECTRIC DEVICE, LIQUID INJECTION HEAD, AND PRINTER TO INCREASE PIEZOELECTRIC CONSTANT

PURPOSE: A ferroelectric film stacked body is provided to improve a covalent character in a piezoelectric layer by using a PZTN(lead zirconate titanate niobate) layer in the piezoelectric layer. CONSTITUTION: A ferroelectric film stacked body includes an electrode and a PZT-based ferroelectric layer formed on the electrode. In the PZT-based ferroelectric layer, 2.5 mol percent to 40 mol percent of titanium composition is replaced by Nb. The electrode almost doesn't include oxygen diffused from the PZT-based ferroelectric layer. The ferroelectric of the PZT-based ferroelectric is indicated by a general formula PbZrxTiyNbz wherein x+y+z=1 and 0 x 0.975. © KIPO 2006 ...

Method for manufacturing wiring substrate

A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dipping the substrate in an electroless plating solution to thereby precipitate metal on the catalyst layer to provide a first metal layer; (c) washing a top surface of the substrate with water; and (d) dipping the substrate in an electroless plating solution to thereby precipitate metal on the first metal layer to provide a second metal layer.

PIEZOELECTRIC LAMINATE, SURFACE ACOUSTIC WAVE DEVICE, THIN-FILM PIEZOELECTRIC RESONATOR, AND PIEZOELECTRIC ACTUATOR

A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, "a" and "x" in the compositional formula being respectively 0.1 Подробнее

JAMMING APPARATUS FOR ELECTRIC WAVE SOURCE

PURPOSE: To perform jamming against electric wave sources different in frequency in a time-sharing manner by one variable oscillator, by constructing an apparatus so that the transmission frequency of a jamming wave can be altered every specified time. CONSTITUTION: A reception frequency detecting circuit 2 detects different frequencies from a plurality of electric wave sources and sets a jamming transmission time for each of the electric wave sources. A memory 5 stores each frequency and each jamming transmission time sent from the detecting circuit 2. A control circuit 6 for transmission data reads a prescribed frequency and a prescribed time stored in the memory 5, according to an address, and sets and outputs the prescribed time. A variable oscillator 8, supplied with an output from the control circuit 6, oscillates a transmission wave of the prescribed frequency. A timer 8 is supplied with an output of the set time from the control circuit 6 and outputs an interrupt signal to the control ...

FERROELECTRIC MEMORY

PROBLEM TO BE SOLVED: To provide a ferroelectric memory excellent in operation characteristics in low voltage drive. SOLUTION: The ferroelectric memory includes a memory cell MC having a ferroelectric capacitor Cf. When application voltage is assumed to be Vapp between both electrodes of a ferroelectric capacitor Cf and counter voltage of the ferroelectric capacitor Cf is assumed to be Vc, Vc/Vapp is 0.4 or more and 0.8 or less. COPYRIGHT: (C)2007,JPO&INPIT ...

APPLICABLE CERAMIC MATERIAL AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To form a ceramic film having excellent film properties. SOLUTION: The applicable ceramic material is produced by agitating a raw material 1 containing a multiple oxide in the presence of a platinum group element catalyst 2 and using a sol/gel raw material containing at least either a hydrolyzate of the multiple oxide or a polycondensate of the multiple oxide as the raw material 1. COPYRIGHT: (C)2005,JPO&NCIPI ...

CONTROLLER OF ENGINE-DRIVEN GENERATOR

PURPOSE: To improve the generating efficiency of an engine-driven generator without unstabilizing the engine output by regulating the field of the generator connected in parallel with a battery in response to a total load current supplied to an electric load. CONSTITUTION: A parallel circuit of a battery 2 and a generator driven by an engine 3 is formed as a power source of an electric load 1. A total load current IL supplied to the load 1 is detected by a current detector 5, the excitation of the generator is switched by a generating voltage regulator 6 in response to the detecting current IL to control the generating voltage. In this manner, the generating efficiency can be improved without unstabilizing the engine output. COPYRIGHT: (C)1984,JPO&Japio ...

FERROELECTRIC FILM, FERROELECTRIC CAPACITOR, FERROELECTRIC MEMORY, PIEZOELECTRIC DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING FERROELECTRIC FILM, AND METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR

A ferroelectric film is composed of an oxide represented by a general formula of ABNbO. The component A comprises at least Pb, and the component B comprises at least one of Zr, Ti, V, W, Hf, and Ta. The ferroelectric film contains Nb in an amount of 0.05 <= x < 1. This ferroelectric film can be used in any of 1T1C, 2T2C and simple matrix ferroelectric memories.1-xx 3 © KIPO & WIPO 2007 ...

FILM STRUCTURE BODY AND METHOD FOR MANUFACTURING THE SAME

A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a plane; an orientation film including a zirconium oxide film that is cubic crystal-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal-oriented on the orientation film. 1. A film structure body comprising:a silicon substrate including a principal surface composed of a plane;a first film that is formed on said principal surface, and that includes a zirconium oxide film having a cubic crystal structure and being oriented; anda first conductive film that is formed on said first film, and that includes a platinum film having a cubic crystal structure and being oriented.2. The film structure body according to claim 1 , comprisinga first piezoelectric film that is formed on said first conductive film, and that includes a first lead zirconate titanate film having a tetragonal crystal structure and being oriented.3. The film structure body according to claim 2 , whereinin an X-ray diffraction pattern of said first piezoelectric film by a θ-2θ method using a CuKα ray, when:{'sub': '004', 'a diffraction angle of a diffraction peak of a plane of lead zirconate titanate is denoted as 2θ; and'}{'sub': 'r', 'relative permittivity of said first piezoelectric film is denoted as ε,'}{'sub': 004', 'r, 'claim-text': [{'br': None, 'sub': '004', '2θ≤96.5°\u2003\u2003(Mathematical Formula 1); and'}, {'br': None, 'sub': 'r', 'ε≤450 \u2003\u2003(Mathematical Formula 2).'}], 'said 2θsatisfies a following formula (Mathematical Formula 1), and εsatisfies a following formula (Mathematical Formula 2)4. The film structure body according to claim 3 , wherein{'sub': 'r', 'when a residual polarization value of said first piezoelectric film is denoted as P,'}{'sub': 'r', 'claim-text': {'br': None, 'i': 'P', 'sub': 'r', 'sup': '2', '≥28 μC/cm\u2003\u2003(Mathematical Formula 3).'}, 'said Psatisfies a following formula (Mathematical Formula 3)5. ...

RELATIVE DISTANCE MEASURING INSTRUMENT

PURPOSE: To measure the relative distance between the airframe of its own and a target and to measure the relative distance with high accuracy by using the minimum time detected by a received power minimum detector, a frequency detected by a frequency measuring instrument, the speed and altitude of the airframe of its own, and the altitude of the transmitting antenna of the target. CONSTITUTION: The received power minimum detector 1 investigates time variation in the received power of a radio wave from the target to detect the time when the value becomes minimum, and the minimum time outputted by the detector 1 is stored in a memory 2. Further, the frequency measuring instrument 3 detects the frequency of the radio wave from the target. A relative distance processor 4 calculates the relative distance between the airframe of its own and the target by using the minimum time stored in the memory 2, the frequency detected by the measuring instrument 3, the speed and altitude of the airframe ...

FERROELECTRIC FILM AND ITS PRODUCING PROCESS, FERROELECTRIC CAPACITOR AND FERROELECTRIC MEMORY

PROBLEM TO BE SOLVED: To provide a process for producing a ferroelectric film having hysteresis characteristics of good rectangularity, and to provide a ferroelectric film. SOLUTION: The process for producing a ferroelectric film comprises a first heat treatment step for forming a crystal nucleus in a ferroelectric material film, and a second heat treatment step for crystallizing the ferroelectric material film. COPYRIGHT: (C)2005,JPO&NCIPI ...

PRECURSOR COMPOSITION FOR FORMING FERROELECTRICS, METHOD FOR PREPARING PRECURSOR COMPOSITION, INK JET COATING INK, METHOD FOR PREPARING FERROELECTRIC FILM, PIEZOELECTRIC DEVICE, SEMICONDUCTOR DEVICE, PIEZOELECTRIC ACTUATOR, INK JET RECORDING HEAD, AND INK JET PRINTER

PURPOSE: Provided is a precursor composition for forming ferroelectrics, which is controllable in terms of a composition, allows the reutilization of metal components such as lead, and is amenable to an ink jet coating process. CONSTITUTION: The precursor composition comprises a precursor for forming ferroelectrics. The ferroelectrics are represented by the formula of AB1-xCxO3, wherein the element A includes at least Pb; the element B includes at least one of Zr, Ti, V, W and Hf; and the element C includes at least one of Nb and Ta. The precursor includes at least element B and element C and has ester bonds in a part thereof. The precursor is dissolved or dispersed in an organic solvent, wherein the organic solvent comprises at least a first alcohol and a second alcohol having a higher boiling point and viscosity as compared to the first alcohol. © KIPO 2006 ...

FERROELECTRIC FILM, FERROELECTRIC CAPACITOR, FERROELECTRIC MEMORY, PIEZOELECTRIC DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING FERROELECTRIC FILM, AND METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR

A ferroelectric film is composed of an oxide represented by a general formula of ABNbO. The component A comprises at least Pb, and the component B comprises at least one of Zr, Ti, V, W, Hf, and Ta. The ferroelectric film contains Nb in an amount of 0.05 <= x < 1. This ferroelectric film can be used in any of 1T1C, 2T2C and simple matrix ferroelectric memories.1-xx 3 © KIPO & WIPO 2007 ...

Method of manufacturing ceramic film, method of manufacturing ferroelectric capacitor, ceramic film, ferroelectric capacitor, and semiconductor device

A lower electrode is formed over a substrate, and a raw material including a complex oxide is heated in an atmosphere pressurized to two atmospheres or more and containing oxygen at a volume ratio of 10% or less at a temperature raising rate of 100° C./min or less, thereby forming a lower alloy film of a compound of a first metal which makes up the complex oxide, and a second metal, which makes up the lower electrode, over the lower electrode. A ceramic film in which the raw material is crystallized is formed over the lower alloy film, and an upper electrode is formed over the ceramic film.

Electrode, ferroelectric ceramics and manufacturing method thereof

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3film and a PZT film formed on the first Sr(Ti1-xRux)O3film, wherein the x satisfies a formula 1 below. 0.01≤x≤0.4 formula 1 ...

PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions, and the A-site contains Bi as A-site compensation ions and the B-site contains Nb as B-site compensation ions. 1. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by ABO , wherein:{'sup': 2+', '4+', '4+, 'said perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions;'}{'sup': '3+', 'the A-site contains Bi as A-site compensation ions; and'}{'sup': '5+', 'the B-site contains Nb as B-site compensation ions.'}2. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by ABOincluding an oxygen ion deficiency , wherein:{'sup': 2+', '4+', '4+, 'said perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions;'}{'sup': '3+', 'the A-site contains Bi as A-site compensation ions;'}{'sup': '5+', 'the B-site contains Nb as B-site compensation ions; and'}the total of a surplus valence number in the whole A-site by said A-site compensation ions and a surplus valence number in the whole B-site by said B-site compensation ions is the same as a deficient valence number corresponding to the amount of said oxygen ion deficiency or is smaller than the deficient valence number.3. A PBNZT ferroelectric film that is a ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (PbBi) (( ...

MANUFACTURE OF MAGNETIC HEAD

PURPOSE: To reduce the deviation of a track and to improve the yield by forming plural grooves whose shape is nearly V-shape onto an upper face of a base, forming a lower face of the base so as to be in parallel with a top of the grooves, forming a soft magnetic thin film to the side wall of each slot and grinding a low melting-point glass welded while taking the lower face of the base as a reference face. CONSTITUTION: Plural grooves 11 whose shape is nearly V-shaped are formed continuously to the upper face of a base 1 and a lower face 1a of the base is formed in parallel with a top of the grooves 11, a low melting-point glass 2 is welded to a side wall of each groove after a soft magnetic thin film 3 is formed thereto and the low melting point glass 2 is ground by taking the lower face 1a of the base as a reference face to form a track 7. The base is cut off at a prescribed pitch, the tracks 7 are opposite to bond a couple of the bases 1. Thus, the depth of the grooves is equal to the ...

FERROELECTRIC THIN FILM, SUBSTRATE COATED WITH FERRORELECTRIC THIN FILM, CAPACITOR STRUCTURE ELEMENT AND DEPOSITION OF FERROELECTRIC THIN FILM

PROBLEM TO BE SOLVED: To attain a high residual spontaneous polarization by shifting the compositional ratio of Bi/Ti in a ferroelectric thin film of ferroelectric crystal containing Bi, Ti and O as constitutive elements from stoichiometric composition thereby making the residual spontaneous polarization coercive electric field controllable. SOLUTION: Surface of a silicon substrate 1, i.e., a silicon single crystal water, is thermally oxidized to form a silicon oxide layer 2. An adhesive layer 3 and a lower electrode layer 4 are then formed thereon by sputtering. Subsequently, a titanium oxide butter layer 5, a crystal nucleus layer 6, and a ferroelectric thin film 7 of ferroelectric crystal containing Bi, Ti and O as constitutive elements and having the compositional ratio of Bi/Ti shifted from stoichiometric composition are formed further thereon. According to the structure, the residual spontaneous polarization and coercive electric field are made controllable and a high residual spontaneous ...

PIEZOELECTRIC ELEMENT AND ITS FABRICATION PROCESS, ALLOY FILM, INKJET RECORDING HEAD, INKJET PRINTER, AND PIEZOELECTRIC PUMP

PROBLEM TO BE SOLVED: To provide a highly reliable piezoelectric element, and to provide its fabrication process. SOLUTION: The piezoelectric element 10 comprises a substrate 1, a first electrode 4 formed above the substrate 1, a piezoelectric layer 5 formed above the first electrode 4, and a second electrode 6 formed above the piezoelectric layer 5 wherein the first electrode 4 has an alloy film 40 containing at least one of Ir and Pt, and the alloy film 40 contains an additive metal having a melting point lower than that of at least one of Ir and Pt. COPYRIGHT: (C)2006,JPO&NCIPI ...

FERROELECTRIC CAPACITOR, A METHOD FOR MANUFACTURING THE FERROELECTRIC CAPACITOR, AND A FERROELECTRIC MEMORY BY USING A PEROVSKITE TYPE OXIDE OF PB SERIES

PURPOSE: A ferroelectric capacitor, a method for manufacturing the ferroelectric capacitor, and a ferroelectric memory are provided to achieve a superior ferroelectric property by forming a specific second ferroelectric layer on a first ferroelectric layer. CONSTITUTION: A ferroelectric capacitor(100) includes a substrate(20), a first electrode(22) formed on the substrate, a first ferroelectric layer(24) formed on the first electrode and a complex oxide shown by Pb(Zr,Ti)O3. A second ferroelectric layer(26) is formed on the first ferroelectric layer and includes a complex oxide shown by Pb(Zr,Ti)1-xNbxO3. A second electrode(30) is formed on the second ferroelectric layer. © KIPO 2008 ...

APPLYING APPARATUS AND FILM FORMING APPARATUS CAPABLE OF FORMING UNIFORM APPLYING LAYER

PURPOSE: An applying apparatus and a film forming apparatus are provided to form a uniform applying layer and to reduce an amount of an applying solution by using plural movable shower nozzles to supply the applying solution onto a surface of a substrate and having a gas shower unit for spraying air toward the substrate. CONSTITUTION: A loading unit(10) supports a target. A supporting unit rotates and supports the loading unit. Plural shower nozzles(30,32) spray a solution toward the loading unit. The shower nozzle has an arm unit(30a). A solution containing unit(20) includes a sidewall unit(20a) enclosing the loading unit and a bottom unit having a solution storing unit(24). A gas shower unit is formed on the sidewall unit to blow off vapor toward the loading unit. The supporting unit has a vibration unit to vibrate the loading unit. A ultraviolet rays irradiating unit(40) irradiates ultraviolet rays toward the loading unit. © KIPO 2007 ...

FERROELECTRIC CERAMICS AND MANUFACTURING METHOD OF SAME

To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(ZrTi)Ofilm; and a Pb(ZrTi)Ofilm formed on the Pb(ZrTi)Ofilm; wherein the A and x satisfy the following Formulae 1 to 3: 1. Ferroelectric ceramics comprising:{'sub': 1-A', 'A', '3, 'a Pb(ZrTi)Ofilm; and'}{'sub': 1-x', 'x', '3', '1-A', 'A', '3, 'a Pb(ZrTi)Ofilm formed on said Pb(ZrTi)Ofilm; wherein'} [{'br': None, '0≦A≦0.1\u2003\u2003Formula 1'}, {'br': None, '0.1 Подробнее

Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator

A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (K_aNa_1-a)_xNbO₃, "a" and "x" in the compositional formula being respectively 0.1 Подробнее

Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator and electronic apparatus

A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr_1-xTi_x)_1-yNb_y)O₃ of a perovskite type, where x is in a range of 0<=x<=1, and y is in a range of 0.05<=y<=0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.

Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device

A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O₃ ferroelectric which includes at least four-fold coordinated Si⁴⁺ or Ge⁴⁺ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.

PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC PUMP, INKJET RECORDING HEAD, INKJET PRINTER, SURFACE ACOUSTIC WAVE DEVICE, THIN-FILM PIEZO-RESONATOR, FREQUENCY FILTER, OSCILLATOR, ELECTRONIC CIRCUIT, AND ELECTRONIC DEVICE

PROBLEM TO BE SOLVED: To provide a piezoelectric element which can achieve appropriate piezoelectric characteristic. SOLUTION: The piezoelectric element 10 is provided with a substrate 1, a first conductive layer 4 formed above the substrate 1, a piezoelectric layer 5 which is formed above the first conductive layer 4 and is provided with a perovskite structure, and a second conductive layer 6 which is electrically connected with the piezoelectric layer 5. The first conductive layer 4 is provided with one or more buffer layers 41 comprised of a lanthanide lamilar perovskite compound with a priority orientation of (001). COPYRIGHT: (C)2006,JPO&NCIPI ...

FERROELECTRIC FILM, FERROELECTRIC MEMORY, PIEZOELECTRIC ELEMENT, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE FERROELECTRIC FILM

PROBLEM TO BE SOLVED: To provide a ferroelectric film suitable for a ferroelectric capacitor having hysteresis characteristics which are suitable for any of 1T1C, 2T2C and simple matrix type ferroelectric memories. SOLUTION: The ferroelectric film 101 is formed from an oxide represented by the general formula: AB1-xNbxO3 (wherein element A comprises at least Pb; element B comprises at least one chosen from Zr, Ti, V, W and Hf; and x represents the amount of Nb and is within the range of 0.05≤x<1). COPYRIGHT: (C)2006,JPO&NCIPI ...

PIEZOELECTRIC MATERIAL MANUFACTURING METHOD, PIEZOELECTRIC MATERIAL, AND ELECTRONIC DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a piezoelectric material having a protection film for protecting a piezoelectric material film against moisture in which the piezoelectric material film is never reduced by hydrogen in forming the protection film. SOLUTION: A method for manufacturing a piezoelectric material according to an embodiment of the invention forms a film 15 on a piezoelectric material film 16 by a CVD method using a material gas not containing hydrogen; the film 15 is one of CaFb film, CaFbNC film, CaFbOd film, and CaFbNCOd film, where a, b, c, and d are each a natural number. The material gas has an organic material gas containing carbon and fluorine. COPYRIGHT: (C)2012,JPO&INPIT ...

Laminated electronic devices with conical vias

A laminated electronic device comprises two or more wiring layers including a first wiring layer and a second wiring layer, an insulating layer interposed between the first wiring layer and second wiring layer, and a through conductor extending through the insulating layer for electrically connecting a first conductor disposed on the first wiring layer to a second conductor disposed on the second wiring layer. The through conductor includes divergent sections at both ends, which have a diameter gradually increased toward the first conductor or second conductor.

Ferroelectric memory device

To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life. The present invention is provided with an MFSFET 100 having a ferroelectric thin film at its gate portion, word line 104 , bit line 105 , and bit line 106 so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line 106 and the word line 104 at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line 105 and the word line 104 at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line 106 and the word line 104 at second read timing to detect the current flowing between the both bit lines.

Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor

A ferroelectric film is formed by an oxide that is described by a general formula AB_1-xNb_xO₃. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05<=x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

STORAGE DEVICE

PROBLEM TO BE SOLVED: To provide a novel storage device which employs a principle entirely different from a conventional FeRAM that uses hysteresis characteristics of polarizing inversion. SOLUTION: The storage device comprises a lower electrode 10, a ferroelectric layer 12 formed above the lower electrode 10, a charge compensation layer 14 which is formed above the ferroelectric layer 12 and comprises an oxide having different composition from the ferroelectric layer, and an upper electrode formed above the charge compensation layer 14. The upper electrode comprises a saturation polarization forming electrode 22 for forming a domain saturated and polarized in a specified direction, a writing electrode 24 arranged apart from the saturation polarization forming electrode 22, and a reading electrode 26 arranged apart from the writing electrode 24 in a specified region of the ferroelectric layer 12. COPYRIGHT: (C)2007,JPO&INPIT ...

ACTUATOR, MANUFACTURING METHOD FOR ACTUATOR, LIQUID DROPLET JETTING APPARATUS, LIQUID DROPLET JETTING HEAD AND PRINTER

PROBLEM TO BE SOLVED: To provide a novel actuator which does not use a piezoelectric body, and also to provide its manufacturing method. SOLUTION: The actuator 100 includes a deformable substrate 10, a magnetic body 20 provided above the substrate 10 and having an opening part 22, and a coil 30 provided above the substrate 10 and disposed to surround the magnetic body 20. COPYRIGHT: (C)2009,JPO&INPIT ...

INSULATING MATERIAL, SUBSTRATE COVERED WITH AN INSULATING FILM, METHOD OF PRODUCING THE SAME, AND THIN-FILM DEVICE

A bismuth silicate film (insulating film) (3) of Bi 2 SiO 5 oriented predominantly in the direction (100) is formed on an Si substrate (2), and a ferroelectric thin film (4) is formed on the bismuth silicate film (3) to create an MFIS structure having a c-axis-oriented ferroelectric thin film (4) formed with good reproduceability. A highly reliable thin-film device is produced by applying the MFIS structure to a FET. © KIPO & WIPO 2007 ...

Substrate treatment apparatus and method for manufacturing thin film

To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.

FERROELECTRIC ELEMENT, FERROELECTRIC MEMORY, AND THEIR MANUFACTURING METHODS

PROBLEM TO BE SOLVED: To provide a ferroelectric element that can prevent crosstalks between the elements and is high in reliability, and to provide a ferroelectric memory and a method of manufacturing the ferroelectric element and memory. SOLUTION: The ferroelectric element 20 is provided with a first electrode 12 formed on an insulating film 11, a ferroelectric film 14F formed on the first electrode 12, and a second electrode 16 formed on the ferroelectric film 14F. In the element 20, a film 14N having the same composition as that of the ferroelectric film 14F is formed in the vicinity of the film 14F, and a seed layer 13 having a pyrochlore type crystal structure is formed under the film 14N. COPYRIGHT: (C)2005,JPO&NCIPI ...

SOLGEL SOLUTION FOR FORMING FERROELECTRIC FILM, METHOD OF MANUFACTURING SOLGEL SOLUTION FOR FORMING FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC MEMORY, PIEZOELECTRIC ELEMENT, AND PYROELECTRIC ELEMENT

PROBLEM TO BE SOLVED: To solve, in PZT in usage for ferroelectric memory, problems that a rhombohedral system PZT, which contains Zr more than in a rate, Zr/Ti=52/48, shows a hysteresis of a slim figure, and can drive in a low voltage, however, shows a defective hysteresis in a characteristic of polygon, and problems that a pyramidal quadratic system PZT, which contains rich in Ti, has a figure of hysteresis good in a characteristic of polygon, however, an anti-electric field is large, low voltage driving is difficult, and is impossible to keep reliability. SOLUTION: An ester of organic acid is added to a solgel solution for forming a pyramidal quadratic system PZT in a range of 4≤pH<7 to form a three-dimentional huge network gel, and lattice information of a substrate covered with a Pt(111) film is more utilized to a (111) orientation PZT film than before an additive is added. Or a base alcohol is added to a solgel solution for forming a rhombohedral system PZT ferroelectric film in a ...

METHOD AND APPARATUS FOR MANUFACTURING CERAMIC FILM

PROBLEM TO BE SOLVED: To provide a method for manufacturing ceramics film to form a film under lower temperature. SOLUTION: The method for manufacturing ceramics film comprises the steps of: forming a material layer above a base material; introducing a raw material gas including steam and oxygen gas into an oxidizing gas production section 30; and heating the gas in the oxidizing gas production section 30 and supplying the heated gas to an oxidizing furnace 20 to oxidize the material layer. COPYRIGHT: (C)2007,JPO&INPIT ...

RESORCINOL-BASED WIRE-LIKE POLYMER PARTICLE AND ITS COMPOUND METHOD AND USE

PROBLEM TO BE SOLVED: To provide resorcinol-based polymer particles prepared by a new synthetic process and having new physical properties and forms. SOLUTION: This method for producing the wire-like, resorcinol-based polymer particles comprises adding a monomer for reacting to form a specific polymer to a solution comprising one or more surfactants selected from the group consisting of alkyl ammonium salts and alkylamines and water in a specific molar ratio in the presence of a basic condensing agent, and copolymerizing the monomer in the presence of the surfactant as a template. COPYRIGHT: (C)2007,JPO&INPIT ...

METHOD AND APPARATUS FOR MANUFACTURING CERAMIC FILM BY INTRODUCING GAS INCLUDING STEAM AND OXYGEN GAS INTO OXIDIZING GAS PRODUCTION SECTION

PURPOSE: A method and apparatus for manufacturing a ceramic film is provided to grow a thin film at a low temperature by introducing a gas including steam and oxygen gas into an oxidizing gas production portion. CONSTITUTION: A material layer is formed on a base, and a gas including steam and oxygen gas is introduced into an oxidizing gas production portion. The gas in the oxidizing gas production portion is heated, and the heated gas is supplied to an oxidizing furnace(20) to oxidize the material layer. In the step of forming the material layer, a solution including a raw material solution of the ceramic film is applied onto the base or a layer disposed above the base, and then a heat treatment is performed on the applied solution. © KIPO 2007 ...

Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus

A piezoelectric film is provided that is represented by the following general formula: Pb_1-b[((X_1/3Nb_2/3)_1-cB'_c)_1-aY_a]O₃ wherein X is at least one of Mg, Zn and Ni; B' is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05<=a<0.30; b satisfies 0.025<=b<=0.15; when X is Mg, c satisfies 0.25<=c<=0.35; when X is Ni, c satisfies 0.30<=c<=0.40; and when X is Zn, c satisfies 0.05<=c<=0.15.

PRODUCTION OF MAGNETIC HEAD

PURPOSE: To prevent the degradation of yield due to unfilling of glass in all of track grooves or filling of glass in internal winding grooves by grinding and welding glass after etching molded glass in a strong alkaline solution. CONSTITUTION: A pair of block-shaped cores 1 and 2 consisting of an oxide magnetic material are subjected to required working. Low-melting point glasses 14 and 15 are molded, and cores are ground up to the thickness of low-melting point glasses 14 and 15, and only low-melting point glasses 14 and 15 are dissolvend in the strong alkaline solution to form steps between upper ends of sendust thin films 12 and 13 and those of low-melting point glasses 14 and 15. Glass in internal winding grooves is partially ground, and thereafter, a gap material consisting of a nonmagnetic material is stuck onto the 'senduct(R)' thin film 13 of the core 2, and the surfaces 7 and 8 facing a gap are caused to face each other, and in this state, glasses 14 and 15 are fused to join both ...

FUNCTIONAL WATER, MAKING METHOD OF THE SAME AND MANUFACTURING METHOD OF CERAMIC FILM

【課題】機能水およびその製造方法を提供する。 【解決手段】本発明に係る機能水は、水とアルコールとを含み、５０℃での １ Ｈ−ＮＭＲ分析において、水のＯＨ基に由来するピークと、アルコールのＯＨ基に由来するピークとがひとつのピークをなす。 【選択図】図６

MANUFACTURING METHOD OF PLATED SUBSTRATE

PROBLEM TO BE SOLVED: To provide a plated substrate for forming a fine pattern with excellent accuracy, and its manufacturing method. SOLUTION: The manufacturing method of a plated substrate 100 is a method for manufacturing the plated substrate by an electroless plating method, which includes a step of providing a catalyst layer 32 in an area other than a predetermined pattern on a substrate 10, a step of providing a first metal layer 34 of a predetermined pattern by depositing a first metal on the substrate by immersing the substrate in a first electroless plating liquid containing the first metal, and a step of providing a second metal layer 37 by depositing a second metal on an upper surface of the first metal layer by immersing the substrate in a second electroless plating liquid containing the second metal. The ionization tendency of the first metal is higher than that of the second metal. COPYRIGHT: (C)2008,JPO&INPIT ...

Ceramic and method of manufacturing the same, Dielectric capacitor, semiconductor device, and element

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Electrode, method of manufacturing the same, ferroelectric memory, and semiconductor device

The present invention relates to a method of manufacturing an electrode which includes forming an electrode over a substrate. Initial crystal nuclei of an electrode material are formed over the substrate in an island pattern, and then grown layers of the electrode material are formed by causing the initial crystal nuclei to be grown. A substrate temperature when forming the initial crystal nuclei is higher than a substrate temperature when forming the grown layers.

Memory device and its manufacturing method

A memory device includes a semiconductor substrate, a transistor formed by using the semiconductor substrate, and a capacitor connected to the semiconductor substrate. Changes in electric conductivity of the semiconductor substrate are used as different data, and the transistor reads the data. By changing the amount of charge stored in the capacitor, a density of carriers (electrons) of the semiconductor substrate is changed.

Ferroelectric ceramics, electronic component and manufacturing method of ferroelectric ceramics

Ferroelectric ceramics including: a Pb(Zr 1-B Ti B )O 3 seed crystal film formed on a foundation film; and a Pb(Zr 1-x Ti x )O 3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 0.1< B <1  formula 2 0.1< x <1  formula 3.

LAMINATED ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To enhance electrical characteristics of a laminated electronic component by increasing the Q value of a resonator. SOLUTION: The laminated electronic component comprises more than one wiring layer including a first wiring layer and a second wiring layer, an insulation layer interposed between the first wiring layer and second wiring layer, and a through conductor electrically connecting a first conductor in the first wiring layer penetrating the insulation layer and a second conductor in the second wiring layer. The through conductor has, at both ends thereof, expanded diameter parts each having a diameter increasing toward the first conductor or the second conductor. COPYRIGHT: (C)2012,JPO&INPIT ...

METHOD FOR MANUFACTURING PEROVSKITE OXIDE LAYER, METHOD FOR MANUFACTURING FERROELECTRIC MEMORY AND METHOD FOR MANUFACTURING SURFACE WAVE ELASTIC WAVE ELEMENT

PROBLEM TO BE SOLVED: To provide a method for manufacturing a perovskite oxide layer, a method for manufacturing a ferroelectric memory and a method for manufacturing a surface wave elastic wave element, wherein an interface with an electrode layer is excellent. SOLUTION: The method for manufacturing the perovskite oxide layer contains the steps of forming a first oxide layer 22 composed of perovskite oxide on a substrate 10; forming a second oxide layer 24 composed of at least one layer of a perovskite oxide layer crystallized at a lower temperature than a crystallization temperature of the first oxide layer 22 on the first oxide layer 22, and a pyrochlore layer having the same element as the perovskite oxide; forming an electrode layer 30 on the second oxide layer 24; and making a heat treatment. COPYRIGHT: (C)2007,JPO&INPIT ...

SPONGY NANOPARTICLE COMPOSED OF PLATINUM OR PRECIOUS METAL CONTAINING PLATINUM AND PRODUCING METHOD THEREFOR

PROBLEM TO BE SOLVED: To realize performance and acting effect which have not existed before by creating a platinum nanoparticle and a precious metal nanoparticle each having a new pore shape, a new size, and new characteristics, and applying them to a catalyst and an electrode, in the platinum or the precious metal containing the platinum. SOLUTION: The new spongy platinum nanoparticles whose skelton is constituted of the platinum (Pt) being the noble metal element by reducing a preliminarily added chloroplatinic acid alkalimetal salt into a molecular structure generated by mixing two components of two kinds of non-ionic surfactants or ionic surfactants and the non-ionic surfactant having comparatively large size of hydrophilic part with a reducing agent such as a boron hydride salt, and having porous single crystal structure whose skelton is constituted of the spongy platinum (Pt), which is the single crystal body of 20-100 nm outer diameter, where curved rod-state skeletons of 1.5-4 ...

COMPLEX OXIDE LAMINATE AND A COMPLEX OXIDE LAMINATE MANUFACTURING METHOD AND A DEVICE FOR SECURING HIGH INSULATION PROPERTY OF THE COMPLEX OXIDE LAMINATE

PURPOSE: A complex oxide laminate and a complex oxide laminate manufacturing method and a device are provided to secure good insulation, ferroelectric, and piezoelectric properties of a first complex oxide layer by forming a second complex oxide layer on the first complex oxide layer. CONSTITUTION: The complex oxide laminate(100) is composed of a substrate(20); a first complex oxide layer(24) formed on the substrate and represented by the formula, ABO3; and a second complex oxide layer(26) disposed on the first complex oxide layer and represented by the formula, AB1-xCxO3. An A-element includes at least Pb(Plumbum). A B-element includes at least one of Zr(Zirconium), Ti(Titanium), V(Vanadium), W(Tungsten), and Hf(Hafnium). A C-element includes at least one of Nb(Niobium) and Ta(Tantalum). © KIPO 2007 ...

Film structure and manufacturing method thereof

To provide a film structure that includes a conductive film formed on an SOI substrate and a piezoelectric film formed on the conductive film, and can increase a piezoelectric constant of the piezoelectric film. A film structure 10 includes a substrate 11a, a substrate 11 including an insulating layer 11b on the substrate 11a and a silicon layer 11c on the insulating layer 11b, an alignment film 12 containing zirconium oxide epitaxially grown on the silicon layer 11c, a conductive film 13 containing platinum epitaxially grown on the alignment film 12, and a piezoelectric film 15 epitaxially grown on the conductive film 13.

Transistor type ferroelectric memory and method of manufacturing the same

A transistor type ferroelectric memory including: a substrate; a gate electrode formed above the substrate; a ferroelectric layer formed above the substrate to cover the gate electrode; a source electrode formed above the ferroelectric layer; a drain electrode formed above the ferroelectric layer and apart from the source electrode; and a channel layer formed above the ferroelectric layer and between the source electrode and the drain electrode.

FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A film structure () includes a substrate (), a piezoelectric film () formed on the substrate () and containing first composite oxide represented by a composition formula Pb(ZrTi)O, and a piezoelectric film () formed on the piezoelectric film () and containing second composite oxide represented by a composition formula Pb(ZrTi)O. In the composition formulae, x satisfies 0.10 Подробнее

RESORCINOL-BASED SPIRAL POLYMER AND CARBON, AND PROCESS FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a polymer material and a carbon material having novel physical properties and morphology prepared by a novel synthetic process. SOLUTION: The present invention relates to a polymer which has a backbone component of a copolymer of one or more monomers selected from phenols having structures wherein an aromatic ring is substituted with two or more hydroxyl groups and one or more monomers selected from aldehydes (which may comprise one or more cationic surfactants selected from alkylammonium salts and alkylamines, as well as an anionic surfactant having an amino acid group in its molecular structure); and has a spiral structure with a diameter of 50 to 500 nm; and also relates to a carbon material which is obtained by calcinating the polymer under an inert atmosphere and has a spiral structure with a diameter of 30 to 500 nm. The invention further relates to processes for production of such a spiral polymer and a spiral carbon. COPYRIGHT: (C)2009,JPO&INPIT ...

ELEMENT SUBSTRATE, AND ITS PRODUCTION PROCESS

PROBLEM TO BE SOLVED: To provide an element substrate on which a metallization layer of fine pattern is formed precisely, and to provide its production process. SOLUTION: The process for producing an element substrate comprises a step for forming a peeling layer 24 on a first supporting substrate 10, a step for forming a metallization layer 34 of a predetermined pattern on the peeling layer, a step for applying sol gel solution containing the material of inorganic substrate onto the first supporting substrate, a step for forming an inorganic substrate 114 by removing solvent of the sol gel solution by annealing, and a step for peeling the metallization layer off from the first supporting substrate by decomposing the peeling layer and transferring the metallization layer to the inorganic substrate. COPYRIGHT: (C)2008,JPO&INPIT ...

FUSING GLASS COMPOSITION

PURPOSE: To reduce the viscosity at relatively low temperatures and improve wettability and fusibility by incorporating B2O3, ZnO, SrO and Tl2O in a specific proportion therein. CONSTITUTION: A glass composition is obtained by blending (i) 17-29wt.% B2O3 with (ii) 10-27wt.% ZnO, (iii) 2-4wt.% SrO and (iv) 50-65wt.% Tl2O and melt mixing the components. COPYRIGHT: (C)1992,JPO&Japio ...

Mit einer dünnen ferroelektrischen Schicht überdecktes Substrat, Verfahren zu seiner Herstellung und dieses enthaltendes Kondensatorstrukturelement

Transistor type ferroelectric memory and method of manufacturing the same

Film forming apparatus, substrate for forming oxide thin film and production method thereof

The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming ...

METHOD FOR MANUFACTURING CRYSTALLIZED FILM AND CRYSTALLIZATION APPARATUS

PROBLEM TO BE SOLVED: To provide a crystallized film manufacturing method which advances crystallization of an amorphous film formed on a substrate not in a vertical direction (i.e., an upward direction) to the surface of the substrate but in an approximately horizontal direction (i.e., a lateral direction). SOLUTION: The amorphous film 1 is formed on a substrate, laser light is applied to the amorphous film 1 to crystallize a laser light irradiation area 1a and the amorphous film 1 is subjected to heat treatment to crystallize the amorphous film 1 other than the laser light irradiation area. COPYRIGHT: (C)2011,JPO&INPIT ...

METHOD AND DEVICE FOR WASHING PROTECTIVE CLOTHING

PLATINUM-CARBON COMPLEX MADE BY HAVING SPONGE-LIKE PLATINUM NANO SHEET CARRIED BY CARBON, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To realize hitherto unknown performance and action effect by creating a novel form of a platinum-carbon complex carrying a platinum nano sheet and applying it for catalyst, an electrode or the like. SOLUTION: Platinum complex oxide, two kinds of non-ionic surfactants or a kind of non-ionic surfactant and a kind of ionic surfactant totalling two kinds of surfactants, water, and a reaction mixture of various kinds of carbon are prepared, to which, a reducer agent aqueous solution is added for reaction to form its skeleton by platinum (Pt) as a precious metal element. And a platinum-carbon complex body is generated with a platinum nano sheet in a sheet shape with single crystal or crystal of an outer diameter of 20 to 100 nm with rod-like bent skeletons of a diameter of 1.5 to 4 nm three-dimensionally coupled, and having a sponge-like form with mesh gaps made of slit-shaped pores of a width of 0.3 to 2 nm made carried by carbon, and is recovered. COPYRIGHT: (C)2006,JPO ...

TRANSISTOR-TYPE FERROELECTRIC MEMORY AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a transistor-type ferroelectric memory having a novel structure. SOLUTION: The transistor-type ferroelectric memory 100 includes a substrate 10, a gate electrode 20 formed on the substrate 10, a ferroelectric layer 30 formed on the substrate to cover the electrode 20, a source electrode 40 formed on the layer 30, a drain electrode 42 formed on the layer 30 and located separately from the source electrode 40, and a channel layer 50 formed on the layer 30 and located between the electrodes 40 and 42. COPYRIGHT: (C)2007,JPO&INPIT ...

CERAMICS FILM AND PRODUCTION METHOD THEREFOR, AND FERROELECTRIC CAPACITOR, SEMICONDUCTOR DEVICE, OTHER ELEMENTS

A method of producing a ceramics film comprising the step of forming a ceramics film by crystallizing a ceramics source solution containing a first source solution and a second source solution. The first source solution is different in category from the second source solution, the former being used to produce ferroelectrics and the latter being used to produce oxides such as ABO system, a solvent contained in the former is different in polarity from that contained in the latter, and the first source solution and the second source solution are formed into films with phases separated to thereby form first crystals consisting of the first source solution intermittently in the plane direction of the ceramics film and form second crystals consisting of the second source solution so as to intervene between the first crystals. © KIPO & WIPO 2007 ...

FERROELECTRIC FILM, FERROELECTRIC CAPACITOR, FERROELECTRIC MEMORY, PIEZOELECTRIC DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING FERROELECTRIC FILM, AND METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR

A ferroelectric film is composed of an oxide represented by a general formula of ABNbO. The component A comprises at least Pb, and the component B comprises at least one of Zr, Ti, V, W, Hf, and Ta. The ferroelectric film contains Nb in an amount of 0.05 <= x < 1. This ferroelectric film can be used in any of 1T1C, 2T2C and simple matrix ferroelectric memories.1-xx 3 © KIPO & WIPO 2007 ...

Film structure and method for manufacturing same

Provided is a film structure having a conductive film formed on a substrate and a piezoelectric film formed on the conductive film, wherein the piezoelectric constant of the piezoelectric film can be increased. A method for manufacturing a film structure according to the present invention has steps for: forming, on a substrate 11, a conductive film 13 containing platinum that has a cubic crystal structure and that is (100)-oriented; applying heat treatment to the conductive film 13 at a temperature of 450-600 DEG C; and then forming a film 15 containing a second composite oxide represented by Pb(Zr1-yTiy)O3, with a film 14 containing a first composite oxide represented by Sr(Ti1-xRux)O3 interposed therebetween. x satisfies 0 ≤ x ≤ 1, and y satisfies 0 ≤ y ≤ 0.1.

Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator

A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, a and x in the compositional formula being respectively 0.1 Подробнее

INCOMING RADIO WAVE BEARING MEASURING APPARATUS

PURPOSE: To achieve a smaller size, by calculating a scan cycle of a target radar from a peak time data of a reception power. CONSTITUTION: An amplitude value peak caught be a non-directional antenna 1 is detected with an AGC 2 (Automatic Gain Control), a detector 3 and a power peak time detector 4. A scan cycle of a target radar is obtained by determining difference from the preceding detection time with a scan cycle calculator 5. When a platform carrying the apparatus flies viewing a radar on the left, the scan cycle detected is enlarged. When the radar is viewed on the right, the scan cycle is shortened and error is zero when it is viewed at the front of the platform or opposite thereto. The bearing of the target radar can be specified by comparing a detection scan cycle with a data of a memory 6 using a comparator 7. This enables specification with one non-directional antenna thereby reducing the size. COPYRIGHT: (C)1988,JPO&Japio ...

INSULATIVE TARGET MATERIAL, METHOD FOR MANUFACTURING INSULATIVE TARGET MATERIAL, ELECTROCONDUCTIVE COMPLEX-OXIDE FILM, AND DEVICE

PROBLEM TO BE SOLVED: To provide an insulative target material used for producing an electroconductive complex-oxide film which is uniform, has high insulation properties and has adequate characteristics. SOLUTION: The insulative target material is used for producing an electroconductive complex-oxide film having a composition expressed by general formula ABO3 and includes the oxide of an element (A), the oxide of an element (B), the oxide of an element (X), and at least one of a Si compound and a Ge compound. The A element is at least one selected from La, Ca, Sr, Mn, Ba and Re. The B element is at least one selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb and Nd, and the X element is at least one selected from Nb, Ta and V. COPYRIGHT: (C)2007,JPO&INPIT ...

CERAMIC FILM MANUFACTURING METHOD, FERROELECTRIC CAPACITOR MANUFACTURING METHOD, CERAMIC FILM, FERROELECTRIC CAPACITOR, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a ceramic film or a ferroelectric capacitor which can improve the surface morphology, to provide a ceramic film or a ferroelectric capacitor manufactured by the same, and also to provide a semiconductor device wherein the ceramic film or the ferroelectric capacitor is employed. SOLUTION: The method of manufacturing the semiconductor device comprises a step of forming a bottom electrode 20 on top of a substrate 10, forming the ceramic film 40 on the electrode 20 by heat-treating a raw material 30 containing a composite oxide pressurized to 2 atm or above and crystallizing it, and forming a top electrode 50 on top of the ceramic film. The composite oxide contains Pb or Bi as a constituent element. The raw material 30 is a mixture of a sol-gel material and an MOD material, wherein at least Pb or Bi which is the constituent element of the composite oxide is contained at most 5% in excess with respect to a stoichiometric composition ...

Ferroelektrischer Kondensator, ferroelektrischer Speicher, piezoelektrisches Element, Flüssigkeitsstrahlkopf und Drucker

Film structure, piezoelectric film and superconductor film

According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention comprises: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti1-x, Rux)O3 (wherein 0 ≤ x ≤ 1), which is formed on the metal film by means of epitaxial growth.

Insulating target material, method of manufacturing insulating target material, conductive complex oxide film, and device

An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO₃. The insulating target material includes: an oxide of an element A; an oxide of an element B; an oxide of an element X; and at least one of an Si compound and a Ge compound, the element A being at least one element selected from La, Ca, Sr, Mn, Ba, and Re, the element B being at least one element selected from Ti, V, Sr, Cr, Fe, Co, Ni, Cu, Ru, Ir, Pb, and Nd, and the element X being at least one element selected from Nb, Ta, and V.

LOW-TEMPERATURE-FUSIBLE GLASS COMPOSITION

PURPOSE: To obtain the title composition capable of improving wettability to alloys such as Sendust, with increased hardness, suitable as a magnetic head gap-filling material, by specifying a composition comprising SiO2, B2O3, PbO, ZnO, Al2O3, BaO and ZnF2. CONSTITUTION: The objective composition comprising (A) 3-9wt.% of SiO2, (B) 8-12wt.% of B2O3, (C) 60-65wt.% of PbO, (D) 3-10wt.% of ZnO, (E) 4-10wt.% of Al2O3, (F) 2-4wt.% of BaO, (G) 0.1-0.2wt.% of ZnF2, (H) 0.1-0.2wt.% of NaCl, (I) 0-7wt.% of Na2O, and (J) 0-7wt.% of K2O with (Na2O+K2O) accounting for 4-7wt.% of said composition. This glass composition has high hardness, is good in wettability to alloys, being capable of low-temperature fusing treatment, thus being suitable as a magnetic head gap-filling material. COPYRIGHT: (C)1989,JPO&Japio ...

POLARIZATION TRANSFER DEVICE AND ITS TRANSFER CONTROL METHOD

PROBLEM TO BE SOLVED: To solve the problem in a conventional ferroelectric memory that microfabrication and high integration are limited due to insufficient characteristics and reliability because ferroelectric thin films utilizing nonvolatility are isolated for each memory cell array and the ferroelectric thin film must be cut into small shape in improving the degree of integration as a nonvolatile memory. SOLUTION: A memory cell group in a ferroelectric memory employs a polarization transfer device structure having a configuration in which the ferroelectric thin films are sandwiched by a plurality of electrodes and the ferroelectric thin films are continuously unified to transfer a polarization signal in the ferroelectric thin films. Thus, ferroelectric characteristics can be ensured and a ferroelectric memory suitable for microfabrication and high integration can be obtained. COPYRIGHT: (C)2007,JPO&INPIT ...

FERROELECTRIC FILM LAMINATION, FERROELECTRIC MEMORY, PIEZOELECTRIC ELEMENT, LIQUID INJECTION HEAD, AND PRINTER

PROBLEM TO BE SOLVED: To provide a ferroelectric film lamination having few crystal defects and with excellent characteristics. SOLUTION: The ferroelectric film lamination includes an electrode 102 and a PZT ferroelectric film 101 formed on the electrode. The ferroelectric film 101 has 2.5 mol% or more and 40 mol% or less of its Ti composition substituted by Nb, and the electrode 102 scarcely includes oxygen diffused from the ferroelectric film. COPYRIGHT: (C)2006,JPO&NCIPI ...

Piezoelectric material and piezoelectric element

The present invention provides a non-lead piezoelectric material with excellent characteristic. Specifically the characteristic of the piezoelectric material based on the Bi(Fe, Mn)O3 and Ba(Zr, Ti)O3 can be increased. The piezoelectric component of the invention is characterized by comprising a first electrode (6), a piezoelectric film (9) configured on the first electrode and a second electrode (11) configured on the piezoelectric film, wherein, the piezoelectric material forming the piezoelectric film is composed of the mixed crystals of Bi(Fe, Mn)O3 and Ba(Zr, Ti)O3, and is represented by the formula of (1-x)Bi(Fe1-yMny)O3-xBa(ZruTi1-Uo3). Furthermore 0 Подробнее

TRANSISTOR-TYPE FERROELECTRIC MEMORY AND FABRICATING METHOD THEREOF TO CHANGE ENERGY BARRIER OF DEPLETION LAYER FORMED ON INTERFACE BETWEEN IV-GROUP SEMICONDUCTOR LAYER AND OXIDE SEMICONDUCTOR LAYER

PURPOSE: A transistor-type ferroelectric memory is provided to excite specific fix charges in an oxide semiconductor layer by controlling a polarization direction of a ferroelectric layer. CONSTITUTION: An oxide semiconductor layer(20) is formed on an IV-group semiconductor layer wherein the IV-group semiconductor layer and the oxide semiconductor layer have a pn junction. A ferroelectric layer(30) is formed on the oxide semiconductor layer. A gate electrode is formed on the ferroelectric layer. A source region(12) and a drain region(14) are formed in the IV-group semiconductor layer. The end part of the source/drain region comes in contact with a part of the oxide semiconductor layer. © KIPO 2006 ...

Ferroelectric film, ferroelectric memory, and piezoelectric element

This invention relates to ferroelectric film, ferroelectric memory, and piezoelectric element, with the topics to provide a ferroelectric film of highly credible ferroelectric device. Solution: A ferroelectric film comprised of a perovskite structure ferroelectric represented by ABO3, includes at least one type of Si2+, Ge2+ and Sn2+ as an A site doping ion, and at least Nb5+ as a B site doping ion.

Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator

A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, "a" and "x" in the compositional formula being respectively 0.1 Подробнее

FERROELECTRIC FILM AND MANUFACTURING METHOD THEREOF

To provide a ferroelectric film having improved uniformity in the composition of the film surface and the composition of the entire film, or a manufacturing method thereof. An aspect of the present invention is a ferroelectric film including a ferroelectric coated and sintered crystal film; and a ferroelectric crystal film formed on the ferroelectric coated and sintered crystal film, by a sputtering method, wherein the ferroelectric coated and sintered crystal film is formed by coating a solution having a metal compound containing, in an organic solvent, all of or a part of constituent metals of the ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized. 1. A manufacturing method of a ferroelectric film , comprising the steps of:forming an amorphous precursor film by a method of coating a solution;forming a ferroelectric coated and sintered crystal film, by heating said amorphous precursor film in an oxygen atmosphere to thereby oxidize and crystallize said amorphous precursor film; andepitaxially growing and forming a ferroelectric crystal film on said ferroelectric coated and sintered crystal film, by a sputtering method, wherein said solution is a solution containing, in an organic solvent, a metal compound including all of or a part of constituent metals of said ferroelectric crystal film and a partial polycondensation product thereof.2. The manufacturing method of a ferroelectric film according to claim 1 , wherein each of said ferroelectric coated and sintered crystal film and said ferroelectric crystal film is a Pb(Zr claim 1 ,Ti)Ofilm or a (Pb claim 1 ,A)(Zr claim 1 ,Ti)Ofilm claim 1 , and A includes at least one kind selected from the group consisting of Li claim 1 , Na claim 1 , K claim 1 , Rb claim 1 , Ca claim 1 , Sr claim 1 , Ba claim 1 , Bi and La.3. The manufacturing method of a ferroelectric film according to claim 2 , when a result of SIMS analysis of a composition of a surface of said ...

Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus

A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A_1-bB_1-aX_aO₃ wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05<=a<=0.3; and b satisfies 0.025<=b<=0.15.

PRODUCTION OF COMPOSITE SUBSTRATE AND PRODUCTION OF MAGNETIC HEAD

PURPOSE: To easily produce a composite substrate consisting of a magnetic material part and a non-magnetic material part and having a small porosity and excellent heat resistance by piling in layer a magnetic material powder and a non-magnetic material powder and hot pressing. CONSTITUTION: The non-magnetic material powder such as ceramic powder and the magnetic powder such as a polycrystalline ferrite powder are piled in layer. The laminated powder is sintered, for example, by hot pressing at about 1000°C, in 250kg/cm2 pressure for 60mins. In this way, the composite substrate 1 consisting of the non-magnetic material 2 and the magnetic material 3 and having small porosity heat resistance durable to heat when working is obtained. The composite substrate 1 is jointed with a low m.p. glass 6 to form a soft magnetic thin film 5 on the top surface of the non-magnetic material 2 as a sliding surface 14a of a magnetic tape and the magnetic head chip 14 is obtained. The coil winding wire is winded ...

Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält

Halbleiterspeicher mit einem ferroelektrischen kapazitiven Element und Herstellverfahren für denselben

MFS type field effect transistor, its manufacturing method, ferroelectric memory and semiconductor device

Insulating target material, method of manufacturing insulating target material, insulating complex oxide film, and device

An insulating target material for obtaining an insulating complex oxide film represented by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, and an element C including at least one of Nb and Ta.

CAPACITOR, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING FERROELECTRIC MEMORY DEVICE, METHOD OF MANUFACTURING ACTUATOR, AND METHOD OF MANUFACTURING LIQUID JET HEAD

A method of manufacturing a capacitor, including: forming a lower electrode on a substrate; forming a dielectric film of a ferroelectric or a piezoelectric on the lower electrode; forming an upper electrode on the dielectric film; and forming a silicon oxide film so that at least the dielectric film is covered with the silicon oxide film, the silicon oxide film being formed by using trimethoxysilane.

Droplet ejection device and printer

A droplet ejection device includes: a substrate having first, second, third & fourth pressure chambers extending in a first direction; a nozzle plate below the substrate & having first, second, third & fourth nozzle apertures continuous with first, second, third & forth pressure chambers, respectively; a vibration plate above the substrate; first, second, third & fourth piezoelectric elements above the vibration plate & above first, second, third & fourth pressure chambers. wherein, viewed in a second direction orthogonal to the first direction, the first nozzle aperture positioned to overlap the third nozzle aperture & doesn't overlap the second & fourth nozzle apertures; the second nozzle aperture overlaps the fourth nozzle aperture & doesn't overlap the first & third nozzle apertures, viewed in the second direction; the first piezoelectric element positioned to overlap the third piezoelectric element & doesn't overlap the second & fourth piezoelectric elements, viewed in the second direction ...

Ferroelectric film, ferroelectric memory, and piezoelectric element

To provide ferroelectric films with which highly reliable ferroelectric devices can be obtained. A ferroelectric film comprised of a perovskite structure ferroelectric shown by ABO3, including at least one type of Si2+, Ge2+ and Sn2+ as an A site doping ion, and at least Nb5+ as a B site doping ion.

DIRECTIONAL COUPLER

A directional coupler includes: a main line connecting a first port and a second port; first to third subline sections each of which is formed of a line configured to be electromagnetically coupled to the main line; a first matching section provided between the first subline section and the second subline section; a second matching section provided between the second subline section and the third saline section; and a stack for integrating these components. The stack includes a plurality of dielectric layers and a plurality of conductor layers stacked on each other. Each of the first and second matching sections includes two inductors each formed using one or more of the conductor layers, and a capacitor formed using two or more of the conductor layers. 1. A directional coupler comprising:a first port;a second port;a third port;a fourth port;a main line connecting the first port and the second port;a first subline section, a second subline section and a third sublime section each of which is formed of a line configured to be electromagnetically coupled to the main line;a first matching section; anda second matching section, whereinthe first to third subline sections and the first and second matching sections each have a first end and a second end opposite to each other,the first end of the first subline section is connected to the third port,the first end of the first matching section is connected to the second end of the first subline section,the first end of the second subline section is connected to the second end of the first matching section,the first end of the second matching section is connected to the second end of the second subline section,the first end of the third subline section is connected to the second end of the second matching section,the second end of the third subline section is connected to the fourth port, each of the first and second matching sections causes a change in phase of a signal passing therethrough,each of the first and second ...

COATER AND FILM FORMING APPARATUS

PROBLEM TO BE SOLVED: To provide a coater which is capable of forming a film using a liquid-phase method and of effectively utilizing the coating liquid. SOLUTION: The coater 100 is provided with a mounting table 10 to support a material W to be treated (substrate), a supporting means to support the mounting table 10 freely rotatably and a plurality of shower nozzles 30, 32, 34 to spray the coating liquid towards the mounting table 10. COPYRIGHT: (C)2007,JPO&INPIT ...

WIRING SUBSTRATE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a wiring substrate wherein a metal layer having a nano- and micro-pattern is accurately and locally formed, and its manufacturing method. SOLUTION: The method of manufacturing a wiring substrate 100 includes a step to form a sacrifice layer of a first pattern on the substrate 10; a step to form a catalyst layer of a second pattern on the substrate; a step to deposit a metal layer on the catalyst layer of the second pattern by immersing the substrate in a nonelectrolytic plating liquid; and a step to remove the sacrifice layer by heating and to form a metal layer 34 of a third pattern. COPYRIGHT: (C)2009,JPO&INPIT ...

Ferroelectric capacitor, method of manufacturing ferroelectric capacitor, and ferroelectric memory

PRECURSOR COMPOSITION FOR FORMING FERROELECTRICS, METHOD FOR PREPARING PRECURSOR COMPOSITION, METHOD FOR MANUFACTURING FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT, SEMICONDUCTOR DEVICE, PIEZOELECTRIC ACTUATOR, INK JET RECORDING HEAD, AND INK JET PRINTER

PURPOSE: Provided is a precursor composition for forming a ferroelectric substance, which is easily controllable in terms of composition, and permits recycling metal components such as lead. CONSTITUTION: The precursor composition comprises a precursor for forming a ferroelectric substance, wherein the ferroelectric substance is represented by the formula of AB(1-x)CxO3 (wherein A includes at least Pb, B represents at least one element selected from the group consisting of Zr, Ti, W and Hf, and C includes at least one element selected from the group consisting of Nb and Ta), and the precursor includes at least element B and element C, and partially has an ester bond. © KIPO 2006 ...

PRESSURIZING-TYPE LAMP ANNEALING DEVICE, METHOD FOR PRODUCING THIN FILM, AND METHOD FOR USING PRESSURIZING-TYPE LAMP ANNEALING DEVICE

Provided is a pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment is a pressurizing-type lamp annealing device which includes: a treatment chamber a holding part disposed into the treatment chamber to hold a substrate to be treated a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube disposed into the treatment chamber; and a lamp heater placed in the treatment chamber to irradiate the substrate to be treated with a lamp light, through the transparent tube. 1. A pressurizing-type lamp annealing device comprising:a treatment chamber;a holding part disposed into said treatment chamber to hold a substrate to be treated;a gas-introduction mechanism for introducing a pressurized gas into said treatment chamber;a gas-discharge mechanism for discharging the gas in said treatment chamber;a transparent tube disposed into said treatment chamber; anda lamp heater placed in said transparent tube to irradiate said substrate to be treated with a lamp light, through said transparent tube.2. The pressurizing-type lamp annealing device according to claim 1 , whereinan inner wall of said treatment chamber has a curved face along an outer surface of said transparent tube, andsaid transparent tube is disposed so that the outer surface thereof contacts said curved face.3. The pressurizing-type lamp annealing device according to claim 1 , whereineach end of said transparent tube is connected to outside of said treatment chamber.4. A pressurizing-type lamp annealing device comprising:a chamber;a holding part disposed into said chamber to hold a substrate to be treated positioned at a lower part of said chamber;a gas-introduction mechanism for introducing a pressurized gas into said chamber;a gas-discharge mechanism for discharging the gas in said chamber;a transparent tube ...

SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING THIN FILM

To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber. 1. A substrate treatment apparatus , comprising:a spin-coating treatment chamber for coating a film on a substrate by spin-coating;a first air-conditioning mechanism that regulates an amount of dust in an air in said spin-coating treatment chamber;an annealing treatment chamber for performing lamp annealing treatment on said film coated on said substrate;a conveying chamber that is connected to each of said spin-coating treatment chamber and said annealing treatment chamber and is for conveying said substrate between said spin-coating treatment chamber and said annealing treatment chamber each other; anda second air-conditioning mechanism that regulates an amount of dust in an air in said conveying chamber.2. The substrate treatment apparatus according to claim 1 , further comprising a temporary calcination treatment chamber that is connected to the inside of said conveying chamber and is for performing temporary calcination for said film coated on said substrate.3. The substrate treatment apparatus according to claim 1 , further comprising:a drying treatment chamber that is connected to said conveying chamber ...

PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT

A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100 (1-x) % of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1-x) Tc (A)+x Tc (B) >300° C., where Tc (A) is the Curie temperature of the material A and Tc (B) is the Curie temperature of the material B. 19-. (canceled)10. A piezoelectric element comprising:a first electrode;a piezoelectric film disposed on the first electrode; anda second electrode disposed on the piezoelectric film,{'sup': '2', 'b': '1000', 'wherein the piezoelectric film is composed of piezoelectric material that is formed by mixing 100 (1-x) % material A having a spontaneous polarization of 0.5 C/mor greater at 25° C. and 100 x % material B having piezoelectric characteristics and a dielectric constant of or greater at 25° C.,'}wherein (1-x) Tc (A)+x Tc (B)≧300° C., where Tc (A) is the Curie temperature of the material A and Tc (B) is the Curie temperature of the material B, and;{'sub': '33', 'wherein the piezoelectric constant dis 46.5 (pm/V) or higher.'}11. The piezoelectric element according to claim 10 , wherein each of the first electrode and the second electrode is formed from one of metals claim 10 , one of conductive oxides claim 10 , or a laminate of layers of plural ones of the metals or the conductive oxides.12. The piezoelectric element according to claim 10 , wherein one of the first electrode and the second electrode is formed from any one of or a laminate of layers of selected ones of Pt claim 10 , Ir claim 10 , Au claim 10 , Ti claim 10 , Zr claim 10 , Fe claim 10 , Mn claim 10 , Ni claim 10 , Co claim 10 , IrO claim 10 , Nb:SrTiO claim 10 , La:SrTiO claim 10 , ...

POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC SUBSTANCE, AND MANFACTURING METHOD THEREFOR

The plasma poling device includes: a holding electrode being disposed in a poling chamber and holding a substrate to be subjected to poling thereon; an opposite electrode being disposed in the poling chamber and being disposed opposite to the substrate to be subjected to poling held on the holding electrode; a power source being electrically connected to either the holding electrode or the opposite electrode; a gas supply mechanism supplying a gas for forming plasma to a space between the opposite electrode and the holding electrode; and a control unit controlling the power source and the gas supply mechanism, wherein the control unit controls the power source and the gas supply mechanism, so as to form a plasma at a position opposite to the substrate to be subjected to poling to thereby perform poling treatment on the substrate to be subjected to poling. 1. A method of poling treatment comprising the step of forming a plasma at a position opposite to a substrate to be subjected to polling , to thereby perform poling treatment on said substrate to be subjected to poling.2. The method of poling treatment according to claim 1 , wherein said substrate to be subjected to poling is a substrate having a dielectric substance.3. The method of poling treatment according to claim 1 , wherein said substrate to be subjected to poling is a substrate having a ferroelectric substance.4. The method of poling treatment according to claim 3 , wherein the temperature of said substrate to be subjected to poling in performing said poling treatment is 250° C. or less.5. The method of poling treatment according to claim 3 , wherein a direct-current voltage at the time of forming a direct-current plasma at a position opposite to said substrate to be subjected to poling or a direct-current voltage component at the time of forming a high frequency plasma at a position opposite to said substrate to be subjected to poling is in a range of ±50 V to ±2 kV.6. The method of poling treatment ...

FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM

To produce a ferroelectric film including a non-lead material. An embodiment of the present invention is a ferroelectric film characterized by being represented by (Baα)(Tiβ(α: one or more metal elements among Mg (magnesium), Ca2+ (calcium), Sr (strontium), Li (lithium), Na (sodium), K (potassium), Rb (rubidium), Cs (cesium), Mg (magnesium), Ca2+ (calcium) and Sr (strontium), β: one or more metal elements among Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Sc (scandium), Y (yttrium), La (lanthanum), Ce (cerium), Pr (praseodymium), Nd (neodymium), Sm (samarium), Eu (europium), Gd (gadolinium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium), Lu (lutetium), Ha (hafnium) and Ta (tantalum)). 124-. (canceled)25. A ferroelectric film represented by (Baα)(Tiβ)O(α: one or more metal elements among Mg (magnesium) , Sr (strontium) , Li (lithium) , Na (sodium) , K (potassium) , Rb (rubidium) and Cs (cesium) , β: one or more metal elements among V (vanadium) , Cr (chromium) , Mn (manganese) , Fe (iron) , Co (cobalt) , Ni (nickel) , Cu (copper) , Zr (zirconium) , Nb (niobium) , Mo (molybdenum) , Ru (ruthenium) , Rh (rhodium) , Pd (palladium) , Ag (silver) , Sc (scandium) , Y (yttrium) , La (lanthanum) , Ce (cerium) , Pr (praseodymium) , Nd (neodymium) , Sm (samarium) , Eu (europium) , Gd (gadolinium) , Tb (terbium) , Dy (dysprosium) , Ho (holmium) , Er (erbium) , Tm (thulium) , Yb (ytterbium) , Lu (lutetium) , Ha (hafnium) and Ta (tantalum)) ,wherein a and b satisfy Expressions (1) and (2) below:(1) 0.5≦a≦1(2) 0≦b≦0.5.26. The ferroelectric film according to claim 25 , wherein said α is an alkali metal element.27. The ferroelectric film according to claim 25 , wherein said (Baα)(TiZr)Oincludes a perovskite structure.28. A sol-gel solution for forming a ferroelectric film on ...

Ferroelectric film, electronic component and method for manufacturing ferroelectric film

A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. 1. A ferroelectric crystal film , comprising:a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; anda ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film, whereinsaid ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all the component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized.2. The ferroelectric crystal film according to claim 1 , whereinsaid ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.3. The ferroelectric crystal film according to claim 1 , wherein{'sub': 3', '3, 'each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a Ph (Zr, Ti)Ofilm or a (Pb, A) (Sr, Ti)Ofilm and A is configured with at least one kind selected from the group consisting of Li, Na, X, Rb, Ca, Sr, Ba, Bi, and La.'}4. The ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': {'br': None, '60/40≦Zr/Ti≦40/60\u2003\u2003(1)'}, 'a Zr/Ti ratio in the number of elements for said Pb (Zr, Ti)Ofilm or (Pb, A)(Zr, Ti)Ofilm satisfies said following formula (1).'}5. The ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': [{'br': None, 'Pb/(Zr+Ti)<1.06\u2003\u2003(2)'}, {'br': None, '(Pb+A)/(Zr+Ti)≦1.35\u2003\u2003(3)'}], 'each ratio in the number of elements for said Pb(Zr, Ti)Ofilm satisfies the following formula (2) and each ratio in the number of elements for said (Pb, A)(Zr, Ti)Ofilm satisfies the ...

FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME

To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (KNa)NbOfilm or a BiFeOfilm having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (KNa)NbOfilm or BiFeOfilm, and X satisfies the formula below 18-. (canceled)9. A method for manufacturing a ferroelectric film , comprising the steps of:forming, by coating a sol-gel solution containing K, Na and Nb on a substrate by a spin-coating method, a coated film on said substrate;forming, by calcining said coated film, a ferroelectric material film on said substrate;forming a first material film for forming a crystalline oxide in an island shape or in a film shape on said ferroelectric material film; andforming, by heat-treating said ferroelectric material film and said first material film for forming a crystalline oxide in an oxygen atmosphere, a ferroelectric film obtained by crystallizing said ferroelectric material film and said first material film for forming a crystalline oxide,wherein a first crystalline oxide obtained by crystallizing said first material film for forming a crystalline oxide is preferentially oriented to (001).10. The method for manufacturing a ferroelectric film according to claim 9 ,wherein said first crystalline oxide is a bismuth layered-structure ferroelectric substance having a pseudo-perovskite structure or a tungsten-bronze type ferroelectric substance.11. The method for manufacturing a ferroelectric film according to claim 10 ,{'sub': 4', '3', '12', '4-x', 'x', '3', '12, 'claim-text': {'br': None, '0 Подробнее

Crystal film, method for manufacturing crystal film, vapor deposition apparatus and multi-chamber apparatus

To improve the single crystallinity of a stacked film in which a ZrO 2 film and a Y 2 O 3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO 2 film and a Y 2 O 3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°.

Directional coupler

A directional coupler includes: a first to a fourth port; a main line connecting the first and second ports; a first to a fourth subline section electromagnetically coupled to the main line; a first to a third matching section; and a stack. The first subline, first matching, third subline, third matching, fourth subline, second matching, and second subline sections are arranged in this order between the third and fourth port. The first and second matching sections include an inductor connecting two subline sections located on opposite sides of the matching section. Each of one or more conductor layers used to form the inductor includes two connection portions for electrical connection to respective other elements, and a line portion connecting the two connection portions. The inductor excluding the connection portions does not include portions that overlap each other when viewed in the stacking direction of the stack.

FEROELECTRIC CERAMICS AND METHOD FOR MANUFACTURING THE SAME

To enhance piezoelectric property. One aspect of the present invention is ferroelectric ceramics including a Pb(ZrTi)Ofilm, wherein: the x satisfies the following formula 1, the Pb(ZrTi)Ofilm has a plurality of columnar single crystals, the x axis, the y axis and the z axis of each of the plurality of columnar single crystals are oriented in the same direction, respectively, 1. Ferroelectric ceramics comprising a Pb(ZrTi)Ofilm , wherein:said x satisfies the following formula 1,{'sub': 1-x', 'x', '3, 'said Pb(ZrTi)Ofilm includes a plurality of columnar single crystals,'} {'br': None, '0 Подробнее

POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE

A plasma poling device includes a holding electrode () which is disposed in a poling chamber () and holds a substrate to be poled (), an opposite electrode () which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source () electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled. 1. A poling treatment method for applying a poling treatment to a substrate to be poled at a first temperature , whereinsaid first temperature is not lower than a temperature at which a residual polarization value in a hysteresis curve of said substrate to be poled becomes 0%.2. The poling treatment method according to claim 1 , whereinsaid poling treatment is applied to said substrate to be poled while a temperature is decreased from said first temperature to a second temperature or while the temperature is increased from said second temperature to said first temperature, andsaid second temperature is not lower than a temperature at which a residual polarization value becomes 50% of a residual polarization value at a room temperature in the hysteresis curve of said substrate to be poled, and also lower than said first temperature.3. A poling treatment method for applying a poling treatment to a substrate to be poled at a first temperature claim 1 , whereinsaid first temperature is not lower than a Curie temperature.4. The poling treatment method according to claim 3 , whereinsaid poling treatment is applied to said substrate to be poled while a temperature is decreased from said first ...

FERROELECTRIC CERAMICS, ELECTRONIC COMPONENT AND MANUFACTURING METHOD OF FERROELECTRIC CERAMICS

Ferroelectric ceramics including: a Pb(ZrTi)Oseed crystal film formed on a foundation film; and a Pb(ZrTi)Ocrystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 1. Ferroelectric ceramics comprising:{'sub': 1-B', 'B', '3, 'a Pb(ZrTi)Oseed crystal film formed on a foundation film; and'}{'sub': 1-x', 'x', '3', '1-B', 'B', '3, 'a Pb(ZrTi)Ocrystal film formed on said Pb(ZrTi)Oseed crystal film, wherein{'sub': 1-B', 'B', '3, 'said Pb(ZrTi)Oseed crystal film is formed by sputtering while said foundation film is being disposed on an upper side of a sputtering target and said foundation film is being made to face said sputtering target;'}{'sub': 1-B', 'B', '3', '1-x', 'x', '3, 'in said Pb(ZrTi)Oseed crystal film, a Zr/Ti ratio on said Pb(ZrTi)Ocrystal film side from a center in the thickness direction thereof is larger than a Zr/Ti ratio on said foundation film side from the center in the thickness direction thereof;'}{'sub': 1-x', 'x', '3', '1-x', 'x', '3, 'said Pb(ZrTi)Ocrystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the Pb(ZrTi)Ocrystal film and a partial polycondensation product thereof; and'} [{'br': None, 'i': 'B<', '0.1<1\u2003\u2003formula 2'}, {'br': None, 'i': 'x<', ...

FILM STRUCTURE, PIEZOELECTRIC FILM AND SUPERCONDUCTOR FILM

According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti, Ru)O(wherein 0≤x≤1), which is formed on the metal film by means of epitaxial growth. 1. A film structure comprising:a substrate;a buffer film formed on the substrate and having a tetragonal crystal structure containing zirconia;a metal film containing a platinum group element and formed on the buffer film by means of epitaxial growth; and{'sub': 1−x', 'x', '3, 'a film containing Sr(Ti, Ru)O(0≤x≤1) and formed on the metal film by means of epitaxial growth.'}2. The film structure according to claim 1 , wherein the metal film has a thickness of 20 nm to 150 nm.3. The film structure according to claim 1 , wherein the buffer film further contains a rare earth element or an alkaline earth element.4. The film structure according to claim 1 , wherein a surface area of the buffer film is 1.30 to 1.60 times a surface area of a planar surface.5. The film structure according to claim 1 , wherein the substrate is oriented in a (100) plane claim 1 , a (110) plane claim 1 , or a (111) plane.6. The film structure according to claim 1 , wherein the buffer film is formed by means of epitaxial growth in accordance with an orientation of the substrate.7. A single crystal piezoelectric film formed on the film according to .8. The piezoelectric film according to claim 7 , having a trigonal crystal structure or a hexagonal crystal structure.9. The piezoelectric film according to claim 8 , comprising a material of BiFeO claim 8 , LiNbO claim 8 , LiTaOor AlN.1011-. (canceled)12 ...

FERROELECTRIC CERAMICS AND METHOD FOR MANUFACTURING THE SAME

An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiOfilm formed on the Pt film, and a PZT film formed on the SrTiO, wherein the stacked film is formed by repeating sequentially N times a first ZrOfilm and a YOfilm, and a second ZrOfilm is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less. 1. Ferroelectric ceramics comprising:{'sub': '2', 'a Pt film formed on a ZrOfilm;'}{'sub': '3', 'a SrTiOfilm formed on said Pt film; and'}{'sub': '3', 'a PZT film formed on said SrTiOfilm.'}2. Ferroelectric ceramics comprising:a Pt film formed on a stacked film;{'sub': '3', 'a SrTiOfilm formed on said Pt film; and'}{'sub': '3', 'a PZT film formed on said SrTiOfilm, wherein,'}{'sub': 2', '2', '3', '2, 'said stacked film is a film formed by repeating N times sequentially a first ZrOfilm and a YOfilm, and a second ZrOfilm is formed on said film formed repeatedly N times; and'}said N is an integer of 1 or more.3. The ferroelectric ceramics according to claim 2 , wherein a ratio of Y/(Zr+Y) of said stacked film is 30% or less.4. Ferroelectric ceramics comprising:an oxide film of a metallic crystal having a body-centered cubic lattice structure formed on a stacked film;a Pt film formed on said oxide film; anda PZT film formed on said Pt film, wherein,{'sub': 2', '2', '3', '2, 'said stacked film is a film formed by repeating N times sequentially a first ZrOfilm and a YOfilm, and a second ZrOfilm is formed on said film formed repeatedly N times;'}said N is an integer of 1 or more; anda ratio of Y/(Zr+Y) of said stacked film is 30% or less.5. Ferroelectric ceramics comprising:an oxide film of a metallic crystal having a body-centered cubic lattice structure formed on a stacked film;a Pt film formed on said oxide film;{'sub': '3', 'a SrTiOfilm formed on said Pt film; and ...

Method for manufacturing ferroelectric film

To provide a method for manufacturing a ferroelectric film formed of a lead-free material. The method for manufacturing a ferroelectric film according to an aspect of the present invention is a method for manufacturing a ferroelectric film including the steps of pouring a sol-gel solution for forming (K 1-X Na X )NbO 3 into a mold 3, calcining the sol-gel solution to form a (K 1-X Na X )NbO 3 material film inside the mold 3, heat-treating and crystallizing the (K 1-X Na X )NbO 3 material film in an oxygen atmosphere to form a (K 1-X Na X )NbO 3 crystallized film inside the mold 3 and removing the mold 3 through etching, and is characterized in that the mold 3 is more easily etched than the (K 1-X Na X )NbO 3 crystallized film and the X satisfies a formula below 0.3≦X≦0.7.

THERMAL POLING METHOD, PIEZOELECTRIC FILM AND MANUFACTURING METHOD OF SAME, THERMAL POLING APPARATUS, AND INSPECTION METHOD OF PIEZOELECTRIC PROPERTY

A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure. 1. An inspection method of piezoelectric property , comprising the steps of: comparing peak positions in XRD results of each of a first ferroelectric film and a second ferroelectric film , determining that a piezoelectric property is excellent when the peak position of said second ferroelectric film is shifted to a lower-angle side than the peak position of said first ferroelectric film , and determining that a piezoelectric property is not excellent when the peak position of said second ferroelectric film is not shifted to a lower-angle side than the peak position of said first ferroelectric film , whereinsaid first ferroelectric film is one not subjected to a thermal poling treatment, andsaid second ferroelectric film is one subjected to a thermal poling treatment.2. The inspection method of piezoelectric property according to claim 1 , whereinsaid first ferroelectric film has a single-domain crystal structure, andsaid second ferroelectric film has a multi-domain crystal structure. The present invention relates to a thermal poling method, piezoelectric film and manufacturing method of same, thermal poling apparatus, and inspection method of piezoelectric property.is a schematic diagram illustrating a conventional poling apparatus.A crystal is sandwiched in the center of a pair of electrodes constituted of two parallel flat plates each having 10×10 mmso that an electric field is applied in the direction not subjected to mechanical poling. In addition, the crystal together with the electrodes is immersed in an oil of an oil bath , ...

FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME

To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (KNa)NbOfilm or a BiFeOfilm having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (KNa)NbOfilm or BiFeOfilm, and X satisfies the formula below 1. A ferroelectric film comprising:{'sub': 1-X', 'X', '3', '3, 'a (KNa)NbOfilm or a BiFeOfilm having a perovskite structure; and'}{'sub': 1-X', 'X', '3', '3, 'a crystalline oxide preferentially oriented to (001), formed on at least one of an upper side and lower side of said (KNa)NbOfilm or BiFeOfilm,'} {'br': None, 'i': '≦X≦', '0.30.7.'}, 'wherein X satisfies the formula below'}2. The ferroelectric film according to claim 1 ,wherein said crystalline oxide is a bismuth layered-structure ferroelectric substance having a pseudo-perovskite structure or a tungsten-bronze type ferroelectric substance.3. The ferroelectric film according to claim 1 ,{'sub': 2', '2', 'm−1', 'm', '3m+1', '2', 'm−1', 'm', 'm+3, 'sup': 2+', '2−, 'wherein said bismuth layered-structure ferroelectric substance is (BiO)(ABO)(m=1 to 5) or BiABO(m=1 to 5).'}4. The ferroelectric film according to claim 2 ,{'sub': 4', '3', '12', '4-x', 'x', '3', '12, 'claim-text': {'br': None, 'i': ' Подробнее

CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS

To improve the single crystallinity of a stacked film in which a ZrOfilm and a YOfilm are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrOfilm and a YOfilm formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°. 18-. (canceled)9. A method for manufacturing a crystal film , comprising the steps of:forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal;{'sub': '2', 'forming a ZrOfilm on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and'}{'sub': 2', '3, 'forming a YOfilm on said ZrO2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.'}10. The method for manufacturing a crystal film according to claim 9 , wherein:said substrate has a (100) crystal plane; and{'sub': 2', '3, 'a stacked film in which said ZrO2 film and said YOfilm are stacked is oriented in (100).'}11. The method for manufacturing a crystal film according to claim 9 , wherein a peak half-value width when a stacked film in which said ZrO2 film and said YOfilm are stacked is evaluated by X-ray diffraction is 0.05° to 2.0°.12. The method for manufacturing a crystal film according to claim 9 , wherein:{'sub': 7', '3, 'on a stacked film in which said ZrO2 film and said YOfilm are stacked, an electroconductive film oriented in (100) is formed; and'}on said electroconductive film, a dielectric film oriented in (001) is formed.13. The method for manufacturing a crystal film according to claim 12 , wherein:said electroconductive film is a film containing a metal; and{'sub': '3', 'said dielectric film is represented by a general formula ABO, being a film containing a perovskite material, A including at ...

PIEZOELECTRIC FILM, FERROELECTRIC CERAMICS AND INSPECTION METHOD OF PIEZOELECTRIC FILM

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below. 1. A piezoelectric film comprising a crystal oriented in a c-axis direction and a crystal oriented in an a-axis direction , wherein , when denoting an amount of a (004) component of said crystal oriented in the c-axis direction by C and denoting an amount of a (400) component of said crystal oriented in the a-axis direction by A , the piezoelectric film satisfies a formula 1 below ,{'br': None, 'i': C', 'A+C, '/()≧0.1\u2003\u2003formula 1.'}2. The piezoelectric film according to claim 1 , wherein 2θin a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 2 below claim 1 ,{'br': None, 'sub': '004', '95°<2θ<102°\u2003\u2003formula 2.'}3. The piezoelectric film according to claim 1 , wherein a dvalue in a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 3 below claim 1 ,{'br': None, 'i': ' Подробнее

FILM STRUCTURE BODY, ACTUATOR, MOTOR AND METHOD FOR MANUFACTURING FILM STRUCTURE BODY

To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate. 1. A film structure body , comprisinga single crystal substrate; anda first ferromagnetic film oriented and formed on said single crystal substrate.2. The film structure body according to claim 1 , comprising a first film disposed between said single crystal substrate and said first ferromagnetic film claim 1 , and oriented and formed on said single crystal substrate.3. The film structure body according to claim 1 , comprising a piezoelectric film formed on said first ferromagnetic film.4. A film structure body claim 1 , comprising:a first ferromagnetic film; anda piezoelectric film formed on said first ferromagnetic film.5. The film structure body according to claim 3 , comprising a second ferromagnetic film or a second electroconductive film formed on said piezoelectric film.6. The film structure body according to claim 1 , comprising a piezoelectric film disposed between said single crystal substrate and said first ferromagnetic film.7. A film structure body claim 1 , comprising:a piezoelectric film; anda first ferromagnetic film formed on said piezoelectric film.9. The film structure body according to claim 2 , wherein:said single crystal substrate is a silicon substrate; andsaid first film is a metal oxide film oxidized more easily than silicon.10. The film structure body according to claim 1 , wherein said first ferromagnetic film is a metal film.11. The film structure body according to claim 9 , wherein:said silicon substrate has a main surface constituted of a (100) plane; andsaid first film has a cubic crystal structure and contains (100)-oriented zirconium oxide.12. The film structure body according to claim 3 , comprising a first electroconductive film formed between said first ferromagnetic film and said ...

THERMAL POLING METHOD, PIEZOELECTRIC FILM AND MANUFACTURING METHOD OF SAME, THERMAL POLING APPARATUS, AND INSPECTION METHOD OF PIEZOELECTRIC PROPERTY

A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure. 1. A thermal poling method , comprising the step of performing a poling treatment on a ferroelectric film by performing a heat treatment on said ferroelectric film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less.2. The thermal poling method according to claim 1 , wherein the ferroelectric film before said heat treatment has a single-domain crystal structure claim 1 , andthe ferroelectric film after said heat treatment has a multi-domain crystal structure.3. The thermal poling method according to claim 1 , wherein said pressurized atmosphere is 202650 Pa or more.4. The thermal poling method according to claim 1 , wherein a time for said heat treatment is 10 sec or more.5. The thermal poling method according to claim 1 , wherein said ferroelectric film is formed by a sol-gel method and crystallized.6. The thermal poling method according to claim 1 , wherein said ferroelectric film is{'sub': 3', '2', '2', 'm−1', 'm', '3m+1, 'sup': 2+', '2−, 'a film having a perovskite or a bismuth oxide of layered structure represented by ABOor (BiO) (ABO) where A is at least one selected from the group consisting of Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La and Hf, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, m is a natural number of 5 or less,'}{'sub': 2', '3', '7', '2', '2', 'n−1', 'n', '2n+4', '2', 'n−1', 'n', '2n+3, 'a film having a superconductive oxide represented by LanBaCuO, TrmBaCaCuOor TrmBaCaCuOwhere Lan is at least one selected from the group ...

PIEZOELECTRIC FILM AND PIEZOELECTRIC CERAMICS

An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film. 1. A piezoelectric film , wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film.2. The piezoelectric film according to claim 1 , wherein said piezoelectric film comprises an anti-ferroelectric film claim 1 , and a ferroelectric film formed on said anti-ferroelectric film.3. The piezoelectric film according to claim 2 , wherein said anti-ferroelectric film is a Pb(ZrTi)Ofilm claim 2 ,{'sub': 1-x', 'x', '3, 'said ferroelectric film is a Pb(ZrTi)Ofilm, and'} [{'br': None, '0≦A≦0.1\u2003\u2003Formula 1, {'br': None, '0.1 Подробнее

DIRECTIONAL COUPLER

A directional coupler includes: a main line connecting an input port and an output port; first to third subline sections each of which is formed of a line configured to be electromagnetically coupled to the main line; a first matching section provided between the first subline section and the second subline section; and a second matching section provided between the second subline section and the third subline section. The first and second matching sections are configured to cause changes in phase of high frequency signals passing therethrough, and have mutually different characteristics so as to create two attenuation poles in the frequency response of the coupling of the directional coupler. 1. A directional coupler comprising:an input port;an output port;a coupling port;a terminal port;a main line connecting the input port and the output port;a first subline section, a second subline section and a third subline section each of which is formed of a line configured to be electromagnetically coupled to the main line;a first matching section; anda second matching section, whereinthe first to third subline sections and the first and second matching sections each have a first end and a second end opposite to each other,the first end of the first subline section is connected to the coupling port,the first end of the first matching section is connected to the second end of the first subline section,the first end of the second subline section is connected to the second end of the first matching section,the first end of the second matching section is connected to the second end of the second subline section,the first end of the third subline section is connected to the second end of the second matching section,the second end of the third subline section is connected to the terminal port, andthe first matching section and the second matching section are configured to cause changes in phase of high frequency signals passing therethrough, and have mutually different ...

DIRECTIONAL COUPLER

A directional coupler includes a first to a fourth port, a main line connecting the first port and the second port, a first and a second subline section configured to be electromagnetically coupled to the main line, and a phase shifter. The first subline section, the phase shifter, and the second subline section are arranged in this order in series between the third port and the fourth port. The phase shifter outputs a signal that is phase-delayed relative to an input signal. The phase delay amount of the output signal of the phase shifter relative to the input signal increases with increasing frequency of the input signal. A frequency twice as high as the frequency of the input signal at which the phase delay amount is 90 degrees is lower than the frequency of the input signal at which the phase delay amount is 180 degrees. 1. A directional coupler comprising:a first port;a second port;a third port;a fourth port;a main line connecting the first port and the second port;a first subline section and a second subline section each formed of a line configured to be electromagnetically coupled to the main line; anda phase shifter for outputting a signal that is phase-delayed relative to an input signal, whereinthe first subline section, the phase shifter, and the second subline section are arranged in this order in series between the third port and the fourth port in terms of circuit configuration,a phase delay amount of the output signal of the phase shifter relative to the input signal of the phase shifter increases with increasing frequency of the input signal, anda frequency twice as high as a frequency of the input signal at which the phase delay amount is 90 degrees is lower than a frequency of the input signal at which the phase delay amount is 180 degrees.2. The directional coupler according to claim 1 , further comprising a stack for integrating the first to fourth ports claim 1 , the main line claim 1 , the first and second subline sections and the phase shifter ...

MULTILAYER BALUN

A balun includes first to fourth lines and a stack. A plurality of first conductor layers forming the first and third lines are located in a first region in the stack. A plurality of second conductor layers forming the second and fourth lines are located in a second region in the stack. A ground conductor layer is located closer to the second region than to the first region. The plurality of second conductor layers include a conductor layer pair where a distance between two conductor layers is smallest. 1. A multilayer balun comprising:an unbalanced port;a first balanced port;a second balanced port;a first line connected to the unbalanced port;a second line connected in series to the first line;a third line connected to the first balanced port and electromagnetically coupled to the first line;a fourth line connected to the second balanced port and electromagnetically coupled to the second line; anda stack for integrating the unbalanced port, the first and second balanced ports, and the first to fourth lines, whereinthe stack includes a plurality of dielectric layers and a plurality of conductor layers stacked on each other,the plurality of conductor layers include a plurality of line-forming conductor layers and at least one ground conductor layer connected to a ground,the plurality of line-forming conductor layers include a plurality of first conductor layers forming the first and third lines and a plurality of second conductor layers forming the second and fourth lines, and include a plurality of conductor layer pairs each including two conductor layers adjoining in a stacking direction of the plurality of dielectric layers and the plurality of conductor layers, the two conductor layers being electromagnetically coupled to each other,the plurality of first conductor layers are located in a first region in the stack,the plurality of second conductor layers are located in a second region in the stack, the second region being located at a position different from the ...

ELECTRODE, FERROELECTRIC CERAMICS AND MANUFACTURING METHOD THEREOF

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(TiRu)Ofilm and a PZT film formed on the first Sr(TiRu)Ofilm, wherein the x satisfies a formula 1 below. 1. An electrode comprising a Sr(TiRu)Ofilm , wherein said x satisfies a formula 1 below ,{'br': None, 'i': 'x≦', '0.01≦0.4\u2003\u2003formula 1.'}2. The electrode according to claim 1 , wherein said x satisfies a formula 2 below claim 1 ,{'br': None, 'i': 'x≦', '0.05≦0.2\u2003\u2003formula 2.'}3. Ferroelectric ceramics comprising:{'sub': 1-x', 'x', '3, 'a first Sr(TiRu)Ofilm; and'}{'sub': 1-x', 'x', '3, 'a ferroelectric film formed on said first Sr(TiRu)Ofilm, wherein{'sub': 3', '2', '2', 'm-1', 'm', '3m+1, 'sup': 2+', '2−, 'said ferroelectric film is a film having a perovskite or bismuth layered-structure oxide represented by ABOor (BiO)(ABO) (where A is at least one selected from the group consisting of Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La and Hf, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, and m is a natural number of 5 or less; and'} {'br': None, 'i': 'x≦', '0.01≦0.4\u2003\u2003formula 1.'}, 'said x satisfies a formula 1 below,'}4. The ferroelectric ceramics according to claim 3 , wherein a second Sr(TiRu)Ofilm is formed on said ferroelectric film claim 3 , and said x satisfies a formula 3 below claim 3 ,{'br': None, 'i': 'x≦', '0.01≦0.4\u2003\u2003formula 3.'}5. The ferroelectric ceramics according to claim 3 , wherein said first Sr(TiRu)Ofilm is formed on a ZrOfilm.6. The ferroelectric ceramics according to claim 3 , wherein said first Sr(TiRu)Ofilm is formed on an electrode film.7. The ferroelectric ceramics according to claim 6 , wherein said electrode film includes an oxide or a metal.8. The ferroelectric ceramics according to claim 6 , wherein said electrode film is a Pt film or an Ir film.9. The ferroelectric ceramics according to claim 6 , ...

FERROELECTRIC FILM AND MANUFACTURING METHOD THEREOF

To provide a ferroelectric film having improved uniformity in the composition of the film surface and the composition of the entire film, or a manufacturing method thereof. An aspect of the present invention is a ferroelectric film including a ferroelectric coated and sintered crystal film; and a ferroelectric crystal film formed on the ferroelectric coated and sintered crystal film, by a sputtering method, wherein the ferroelectric coated and sintered crystal film is formed by coating a solution having a metal compound containing, in an organic solvent, all of or a part of constituent metals of the ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized. 1. A ferroelectric film , comprising:a ferroelectric coated and sintered crystal film; anda ferroelectric crystal film formed on said ferroelectric coated and sintered crystal film, by a sputtering method,whereinsaid ferroelectric coated and sintered crystal film is formed by coating a solution including a metal compound containing, in an organic solvent, all of or a part of constituent metals of said ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized.2. The ferroelectric film according to claim 1 , wherein each of said ferroelectric coated and sintered crystal film and said ferroelectric crystal film is a Pb(Zr claim 1 ,Ti)Ofilm or a (Pb claim 1 ,A)(Zr claim 1 ,Ti)Ofilm claim 1 , and A includes at least one kind selected from the group consisting of Li claim 1 , Na claim 1 , K claim 1 , Rb claim 1 , Ca claim 1 , Sr claim 1 , Ba claim 1 , Bi and La.3. The ferroelectric film according to claim 2 , wherein claim 2 , when a result of SIMS analysis of a composition of a surface of said ferroelectric crystal film gives a Pb content of Pmol % claim 2 , a Zr content of Zmol % and a Ti content of Tmol % and a result of ICP analysis of a total composition of said ferroelectric coated and sintered ...

FERROELECTRIC CERAMICS AND MANUFACTURING METHOD THEREOF

To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrOfilm oriented in (200), a Pt film that is formed on the ZrOfilm and is oriented in (200) and a piezoelectric film formed on the Pt film. 1. Ferroelectric ceramics comprising:{'sub': '2', 'a ZrOfilm oriented in (200);'}{'sub': '2', 'a Pt film that is formed on said ZrOfilm and is oriented in (200); and'}a piezoelectric film formed on said Pt film.2. The ferroelectric ceramics according to claim 1 , wherein a PtOfilm oriented in (200) is formed between said ZrOfilm and said Pt film.3. The ferroelectric ceramics according to claim 1 , wherein:{'sub': '2', 'said ZrOfilm is formed on a Si substrate; and'}said Si substrate is oriented in (100).4. Ferroelectric ceramics comprising:{'sub': '2', 'a Pt film formed on a CeOfilm; and'}a piezoelectric film formed on said Pt film. 205. The ferroelectric ceramics according to claim 4 , wherein:{'sub': 7', '12', '2, 'a CeOfilm is formed under said CeOfilm; and'}{'sub': 2', '2, 'a PtOfilm is formed between said CeOfilm and said Pt film.'}6. The ferroelectric ceramics according to claim 4 , wherein:{'sub': '2', 'said CeOfilm is formed on a Si substrate;'}said Si substrate is oriented in (100);{'sub': '2', 'said CeOfilm is oriented in (200); and'}said Pt film is oriented in (200).7. The ferroelectric ceramics according to claim 5 , wherein:{'sub': 7', '12, 'said CeOfilm is formed on a Si substrate;'}said Si substrate is oriented in (100);{'sub': 7', '12, 'said CeOfilm is oriented in (300);'}{'sub': '2', 'said CeOfilm is oriented in (200);'}{'sub': '2', 'said PtOfilm is oriented in (200); and'}said Pt film is oriented in (200). 158. The ferroelectric ceramics according to claim 4 , wherein a HfOfilm is formed under said CeOfilm or between said CeOfilm and said Pt film.9. The ferroelectric ceramics according to claim 5 , wherein a HfOfilm is formed between said CeOfilm and said ...

POLING TREATMENT METHOD, MAGNETIC FIELD POLING DEVICE, AND PIEZOELECTRIC FILM

To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled ; a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled ; and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B. 1. A poling treatment method of a film-to-be-poled by using magnetism.2. The poling treatment method according to claim 1 ,comprising the step of, while generating a magnetic field to said film-to-be-poled, moving said film-to-be-poled in a direction perpendicular to and relative to said magnetic field.3. The poling treatment method according to claim 1 ,wherein said poling treatment is performed on a 90° domain in a direction perpendicular to the thickness direction of said film-to-be-poled, and the poling treatment on said 90° domain is performed by, while generating a magnetic field in a direction parallel to said film-thickness direction, moving said film-to-be-poled in a direction perpendicular to said film-thickness direction and relative to said magnetic field.4. The poling treatment method according to claim 3 ,wherein the poling treatment on said 90° domain is performed at the Curie temperature of said film-to-be-poled, or higher.5. The poling treatment method according to claim 3 ,wherein the poling treatment on said 90° domain is performed while cooling said film-to-be-poled from the Curie temperature or higher.6. The poling treatment method according to claim 1 ,wherein said poling treatment is performed on a 180° domain in a direction parallel to the thickness direction of said film-to-be-poled, andwherein the poling treatment on said 180° domain is performed by, while generating a magnetic field in a direction perpendicular to said film-thickness direction, moving said film-to-be-poled in a ...

ELECTRODE, FERROELECTRIC CERAMICS AND MANUFACTURING METHOD THEREOF

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(TiRu)Ofilm and a PZT film formed on the first Sr(TiRu)Ofilm, wherein the x satisfies a formula 1 below. 111-. (canceled)12. A manufacturing method of ferroelectric ceramics comprising the steps of:{'sub': 1−x', 'x', '3, 'forming a Sr(TiRu)Ofilm on a Pt film; and'}{'sub': 1−x', 'x', '3, 'forming a ferroelectric film on said Sr(TiRu)Ofilm, wherein{'sub': 3', '2', '2', 'm−1', 'm', '3m+1, 'sup': 2+', '2−, 'said ferroelectric film is a film having a perovskite or bismuth layered-structure oxide represented by ABOor (BiO)(ABO) (where A is at least one selected from the group consisting of Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La and Hf, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, and m is a natural number of 5 or less); and'} {'br': None, 'i': 'x≤', '0.01≤0.4 \u2003\u2003formula 1.'}, 'said x satisfies a formula 1 below,'}13. The manufacturing method of ferroelectric ceramics according to claim 12 , wherein claim 12 , after forming said ferroelectric film claim 12 , said ferroelectric film is subjected to etching processing.14. The manufacturing method of ferroelectric ceramics according to claim 12 , wherein said Sr(TiRu)Ofilm is formed by sputtering. The present invention relates to an electrode, ferroelectric ceramics and a manufacturing method thereof.A conventional manufacturing method of a Pb(Zr,Ti)O(hereinafter, referred to as “PZT”) perovskite-type ferroelectric ceramic will be explained.A SiOfilm having a thickness of 300 nm is formed on a 4-inch Si wafer, and a TiOfilm having a thickness of 5 nm is formed on the SiOfilm. Next, a Pt film having a thickness of 150 nm, oriented in, for example, (111) is formed on the TiOfilm, and a PZT sol-gel solution is applied onto the Pt film by using a spin coater. Spin conditions at this time are such that the wafer is ...

PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions, and the A-site contains Bi as A-site compensation ions and the B-site contains Nb as B-site compensation ions. 1. A method for producing a ferroelectric film comprising the steps of:preparing a sol-gel solution including a raw material solution including: a hydrolysis condensation polymerization of an alkoxide raw material including Pb, Bi, Nb, Zr and Ti and heteropolyacid; and polar solvents and unsaturated fatty acids;coating said sol-gel solution on a substrate to form a coated film on said substrate;subjecting said coated film to temporary burning at a temperature of 25 to 450° C. to form a ferroelectric material film on said substrate; andheat-treating said ferroelectric material film at a temperature of 450 to 800° C. to produce a ferroelectric film including a perovskite-structured ferroelectric substance obtained by crystallizing said ferroelectric material film.2. The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film is a PBNZT ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (PbBi)((TiZr)Nb)O claim 1 , wherein:X is 0.05 to 0.1; andY is 0.05 to 0.1.3. The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film has a relative permittivity of 400 or more.4. A ferroelectric film being formed by the method for producing a ferroelectric film according to and having a relative permittivity of 400 or more. The present invention relates to a PBNZT ferroelectric film, a sol-gel solution, a film ...

FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. 1. A manufacturing apparatus for a ferroelectric crystal film , comprising:a first apparatus forming a ferroelectric seed crystal film having an orientation in a predetermined face over a substrate in epitaxial growth by a sputtering method;a second apparatus performing coating to form an amorphous film including ferroelectric material over said ferroelectric seed crystal film by a spin-coat coating method; anda third apparatus heating said ferroelectric seed crystal film and said amorphous film in an oxygen atmosphere to oxidize and crystallize said amorphous film, and thereby forming a ferroelectric coated-and-sintered crystal film.2. The manufacturing apparatus for a ferroelectric crystal film according to claim 1 , whereinsaid ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.3. The manufacturing apparatus for a ferroelectric crystal film according to claim 1 , wherein{'sub': 3', '3, 'each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a Pb(Zr, Ti)Ofilm or a (Pb, A) (Zr, Ti)Ofilm and A is configured with at least one kind selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La.'}4. The manufacturing apparatus for a ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': {'br': None, '60/40≤Zr/Ti≤40/60\u2003\u2003(1)'}, 'a Zr/Ti ratio in the number of elements for said Pb(Zr, Ti)Ofilm or (Pb, A) (Zr, Ti)Ofilm satisfies the following formula (1).'}5. The manufacturing apparatus for a ferroelectric crystal film according to claim 3 , wherein{'sub': 3', '3, 'claim-text': [{'br': None, 'Pb/(Zr+Ti)<1.06\u2003\u2003(2)'}, {'br': None, '(Pb+A)/(Zr+Ti)≤1.35\u2003\u2003(3)'}], 'each ratio in the number of ...

Piezoelectric laminate, surface acoustic wave device, thin-film piezoelectric resonator, and piezoelectric actuator

A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (K a Na 1-a ) x NbO 3 , “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1≦x≦1.2.

PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions, and the A-site contains Bi as A-site compensation ions and the B-site contains Nb as B-site compensation ions. 19-. (canceled)10. A sol-gel solution for forming a ferroelectric film on a substrate , wherein said sol-gel solution has a contact angle of 1 to not more than 40° with respect to the substrate.11. The sol-gel solution according to claim 10 , wherein said contact angle with respect to the substrate is 1 to not more than 20°.12. The sol-gel solution according to claim 10 , wherein said sol-gel solution includes a raw material solution including hydrolysis polycondensation of an alkoxide raw material including Pb claim 10 , Bi claim 10 , Nb claim 10 , Zr and Ti.13. The sol-gel solution according to claim 12 , wherein said sol-gel solution includes a polycarboxylic acid or a polycarboxylic acid ester in the solvent.14. The sol-gel solution according to claim 13 , wherein said polycarboxylic acid ester includes heteropolyacid ions.15. The sol-gel solution according to claim 14 , wherein said heteropolyacid ion has a Keggin type structure represented by following Formula: [XMM′O](where X is a hetero atom claim 14 , M is a polyatom claim 14 , M′ is a polyatom different from M claim 14 , n is a valence number claim 14 , and y=1 to 11).16. The sol-gel solution according to claim 14 , wherein said heteropolyacid ion has a Keggin type structure represented by Formula: [XMO] (where X is a hetero atom claim 14 , M is a polyatom claim 14 , and n is a valence number).17. The sol-gel solution according to claim 14 , wherein said ...

FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

A film structure includes a substrate () which is a silicon substrate including an upper surface () composed of a (100) plane, an alignment film () which is formed on the upper surface () and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film () which is formed on the alignment film () and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF) between the alignment film () and the conductive film () is greater than an average interface roughness of an interface (IF) between the substrate () and the alignment film (). 1. A film structure comprising:a silicon substrate including a main surface composed of a (100) plane;a first film that is formed on the main surface and includes a first zirconium oxide film which has a cubic crystal structure and is (100)-oriented; anda conductive film that is formed on the first film and includes a platinum film which has a cubic crystal structure and is (100)-oriented, whereina first average interface roughness of a first interface between the first film and the conductive film is greater than a second average interface roughness of a second interface between the silicon substrate and the first film.2. The film structure according to claim 1 , whereinthe first film includesa film portion formed on the main surface, anda plurality of protrusion portions each protruded from an upper surface of the film portion,the film portion includes a second zirconium oxide film which has a cubic crystal structure and is (100)-oriented, andeach of the plurality of protrusion portions includes a third zirconium oxide film which has a cubic crystal structure and is (100)-oriented.3. The film structure according to claim 2 , whereina cross-sectional shape of the protrusion portion perpendicular to a first direction along the main surface is a triangular shape, anda width of the protrusion portion in a second ...

成膜装置及び成膜方法

(57)【要約】 【課題】 超臨界状態の流体又は液体に成膜原料を混合 した原料流体を用いて薄膜を成膜する成膜装置及び成膜 方法を提供する。 【解決手段】 本発明に係る成膜装置は、形成目的とす る金属酸化物構成元素からなる縮重合体とアルコールと 超臨界状態の流体又は液体の二酸化炭素とを混合した原 料流体を供給して薄膜形成する装置である。この成膜装 置は、基板３を保持する基板ホルダー２と、この基板ホ ルダーを収容する成膜チャンバー１と、上記原料流体を 基板表面に供給する供給機構と、上記基板ホルダー２に 保持された基板３を加熱するランプヒータ４と、を具備 するものである。これにより、超臨界状態の流体又は液 体に成膜原料を混合した原料流体を用いて薄膜を成膜す ることができる。

Display unit of normal operation for computer program

Apparatus and method for forming thin-film

A method of forming a thin-film including a capability to remove contaminants from the formed thin-film and/or a substrate on which the thin-film is formed using alcohol. The method includes allowing a substrate holder to support a substract. A first mixture is produced by mixing a condensation polymer containing an element of metal oxide compound and alcohol. Then second mixture is produced by mixing supercritical fluid or liquid carbon dioxide and the first mixture. A thin film is formed by applying the second mixture on a surface of the substrate. After forming the thin-film, the substrate is cleaned by applying alcohol to upper and lower surfaces, preferably the whole upper and lower surfaces, of the substract. The thin-film is crystallized by heating, and the crystallizing may include applying oxygen in a crystallizing chamber. Soft X-rays may be applied to the substrate, during the forming of the thin-film on the surface of the substrate.

Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Apparatus and method for forming thin-film

To provide an apparatus and method for forming a thin-film using raw material fluid containing a film ingredient and supercritical fluid or liquid. An apparatus according to the present invention is used for forming a thin-film using raw material fluid containing alcohol, supercritical fluid or liquid carbon dioxide, and a condensation polymer containing an element of a target metal oxide compound. This apparatus includes a substrate holder 2 for retaining a substrate 3, a film-forming chamber 1 for housing the substrate holder, a feeding means for feeding the raw material fluid to the substrate surface, and a lamp heater 4 for heating the substrate 3 retained to the substrate holder 2. Thereby, the thin-film can be formed using the raw material fluid containing a film ingredient and the supercritical fluid or liquid.

Patent JPS5839339B2

Digital pursuit system for movement target

Patent JPS6158847B2

Ferroelectric memory device, method of driving the same, and driver circuit

A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.

PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO 3 , wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions, and the A-site contains Bi 3+ as A-site compensation ions and the B-site contains Nb 5+ as B-site compensation ions.

Oxide material, method for preparing oxide thin film and element using said material

An oxide material which comprises a perovskite or layered perovskite type oxide and a catalyst material containing one or more Group IV elements selected from the group consisting of Si, Ge and Sn and having formed a solid solution with the perovskite type oxide. The oxide material permits the crystallizaion of a perovskite or layered perovskite type oxide material at a reduced temperature, which leads to the retention during the processing thereof or an improvement of characteristics of the perovskite type oxide material.

Ferroelectric material, ferroelectric film and method of manufacturing the same, ferroelectric capacitor and method of manufacturing the same, ferroelectric memory, and piezoelectric device

A ferroelectric material for forming a ferroelectric that is described by a general formula ABO 3 , includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element

A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.

MOCVD apparatus and MOCVD method

The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate. The passage has a cross-sectional area that is smaller than the area of a deposition plane of the substrate when the passage housing unit is cut in parallel with the deposition plane of the substrate.

Piezoelectric thin film laminate and method of manufacture thereof, surface acoustic wave element, frequency filter, oscillator, electronic circuit and electronic instrument

Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory

A method of manufacturing a ferroelectric film including: forming a ferroelectric initial nucleus layer by using a solution of a first ferroelectric material and electrodepositing the first ferroelectric material on an electrode by hydrothermal electrodeposition; electrically charging particles of a second ferroelectric material; forming a ferroelectric material film by electrodepositing the electrically-charged particles of the second ferroelectric material on the ferroelectric initial nucleus layer by electrophoretic deposition; and subjecting the ferroelectric material film to a heat treatment.

Oxide material, method for preparing oxide thin film and element using said material

An oxide material which comprises a perovskite or layered perovskite type oxide and a catalyst material containing one or more Group IV elements selected from the group consisting of Si, Ge and Sn and having formed a solid solution with the perovskite type oxide. The oxide material permits the crystallizaion of a perovskite or layered perovskite type oxide material at a reduced temperature, which leads to the retention during the processing thereof or an improvement of characteristics of the perovskite type oxide material.

Semiconductor memory, especially non-volatile memory with ferroelectric capacitors, has source-drain region formed before producing gate in trench self-aligned with the source-drain region

A semiconductor memory, comprising a source/drain region (5) formed before producing a gate (8a, 9a, 10a) in a trench (7) self-aligned with the source/drain region, is new. A semiconductor component comprises a source/drain region (5) formed in a semiconductor substrate (1) of opposite conductivity type, an interlayer insulation (6) formed on the substrate and including a trench (7) which is self-aligned with the source/drain region and which extends down to the substrate surface, and a gate (8a, 9a, 10a) formed on at least the inner wall of the trench. An Independent claim is also included for production of a semiconductor memory as described above. Preferred Features: The gate comprises a dielectric gate buffer film (8a), a ferroelectric gate film (9a) and a gate electrode (10a).

Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof

A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.

Raw material solution, ferroelectric film, method for manufacturing ferroelectric film, piezoelectric element, piezoelectric actuator, ink jet recording head, and ink jet printer

By designing the structure of ferroelectric constituting elements in a raw material solution for a ferroelectric thin film, the crystallization temperature is lowered. A raw material solution forms the ferroelectric shown by a general formula of ABO 3 , and includes a sol-gel raw material, and a MOD raw material having a stoichiometric composition of at least an element B that is identical with the sol-gel raw material.

Film forming apparatus and film forming method

A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body.

Ferroelectric film and method of manufacturing the same

A method of manufacturing a ferroelectric film including: (a) mixing a polycarboxylate containing niobium, a polycarboxylate containing bismuth, a polycarboxylic acid or a polycarboxylic acid ester, and an organic solvent; and (b) applying the resulting mixed solution to a substrate and heat-treating the applied mixed solution to form a ferroelectric film including BiNbO 4 .

Gate of a memory transistor with a ferroelectric layer and method of manufacturing the same

A transistor type ferroelectric memory includes a group-IV semiconductor layer (10), an oxide semiconductor layer (20) formed over the group-IV semiconductor layer, a ferroelectric layer (30) formed over the oxide semiconductor layer, a gate electrode (40) formed over the ferroelectric layer, and a source region (12) and a drain region (14) formed in the group-IV semiconductor layer. The group-IV semiconductor layer (10) and the oxide semiconductor layer (20) form a pn junction with a depletion layer at the interface of both layers. By controlling the fixed changes individual in the oxide semiconductor layer (20), the current flow between source (12) and drain (14) can be switched on or off.

Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric device, semiconductor device, method for manufacturing ferroelectric film, and method for manufacturing ferroelectric capacitor

Signal detecting and pre-processing apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Determinating method for radar marker distance

Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof

Patent JPS615625B2

Capacitor, method of manufacture thereof and semiconductor device

A capacitor includes a first electrode and a second electrode, and a dielectric layer sandwiched between the first electrode and the second electrode, wherein the dielectric layer includes Pb(Zr x Ti y M 2 )O 3 (where M is at least one material selected from Nb, Ta, and V, and x+y+z=1).

Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film

Method of manufacturing an insulating target material

An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO 3 , the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Piezoelectric film, piezoelectric element, piezoelectric actuator, piezoelectric pump, ink-jet type recording head, ink-jet printer, surface-acoustic-wave element, thin-film piezoelectric resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus

A piezoelectric film is provided that is represented by the following general formula: Pb 1-b [((X 1/3 Nb 2/3 ) 1-c B′ c ) 1-a Y a ]O 3 wherein X is at least one of Mg, Zn and Ni; B′ is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a<0.30; b satisfies 0.025≦b≦0.15; when X is Mg, c satisfies 0.25≦c≦0.35; when X is Ni, c satisfies 0.30≦c≦0.40; and when X is Zn, c satisfies 0.05≦c≦0.15.

Film forming apparatus, substrate for forming oxide thin film and production method thereof

The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Crystalline complex of zirconium phosphate-cyclodextrin and its production

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Element substrate and method of manufacturing the same

A method of manufacturing an element substrate including: forming a release layer on a first support substrate; forming a metal layer having a predetermined pattern on the release layer; applying a sol-gel solution including a material for an inorganic substrate to the first support substrate; removing a solvent from the sol-gel solution by heat treatment to form the inorganic substrate; and removing the metal layer from the first support substrate by decomposing the release layer to transfer the metal layer to the inorganic substrate.

Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor

A ferroelectric film is formed by an oxide that is described by a general formula AB 1-x Nb x O 3 . An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05 ≦x<1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types.

Ferroelectric memory and its manufacturing method

A ferroelectric memory comprises a substrate (100) and a sheet-like device (300) provided over the substrate (100) with an adhesive layer (200) interposed therebetween. The sheet-like device (300) has a memory cell array (304) where a ferroelectric layer is formed at least at the intersections (303) of lower electrodes (301) linearly formed and upper electrodes (302) linearly formed and a peripheral circuit portion (307) for the memory cell array (304).

Incoming radio wave bearing measuring apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method for manufacturing wiring substrate

A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a catalyst layer having a predetermined pattern on a substrate; (b) dipping the substrate in an electroless plating solution to thereby precipitate metal on the catalyst layer to provide a first metal layer; (c) exposing a top surface of the substrate to steam; and (d) dipping the substrate in an electroless plating solution to thereby precipitate metal on the first metal layer to provide a second metal layer.

Precursor composition, method for manufacturing precursor composition, method for manufacturing ferroelectric film, piezoelectric element, semiconductor device, piezoelectric actuator, ink jet recording head, and ink jet printer

Film forming device and membrane structure

【課題】ＳＯＩ基板上に形成された導電膜と、導電膜上に形成された圧電膜と、を有する膜構造体において、圧電膜の圧電定数を増加させることができる膜構造体を提供する。 【解決手段】膜構造体１０は、基体１１ａと、基体１１ａ上の絶縁層１１ｂと、絶縁層１１ｂ上のシリコン層１１ｃと、を含む基板１１と、シリコン層１１ｃ上にエピタキシャル成長した酸化ジルコニウムを含む配向膜１２と、配向膜１２上にエピタキシャル成長した白金を含む導電膜１３と、導電膜１３上にエピタキシャル成長した圧電膜１５と、を有する。 【選択図】図１

Insulating target material, method of manufacturing insulating target material, conductive complex oxide film, and device

An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO 3 , the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.

Method for inspecting container made of synthetic resin

(57)【要約】 【課題】 成膜温度の低温化、薄膜化を可能となるＢｉ 系層状構造化合物からなる強誘電体薄膜の製造方法及び 強誘電体メモリ素子を提供する。 【解決手段】 基板上に強誘電体薄膜を形成するに際し て、前記基板上に酸化チタン薄膜及び酸化ビスマス薄膜 を順次形成し、該酸化ビスマス薄膜上に、Ｂｉ 2 Ａ m-1 Ｂ m Ｏ 3m+3 （式中、ＡはＮａ、Ｋ、Ｐｂ、Ｃａ、Ｓｒ、Ｂ ａ又はＢｉ、ＢはＦｅ、Ｔｉ、Ｎｂ、Ｔａ、Ｗ又はＭｏ の中から選択される少なくとも一種類の元素、ｍは自然 数）で表されるＢｉ系層状化合物からなる強誘電体薄膜 を形成する強誘電体薄膜の製造方法。

Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Laminated electronic component

【課題】インダクタとキャパシタを含む共振器を備えた積層型電子部品において、薄型化を可能にし、且つ導体層およびスルーホールの位置のばらつきに起因したインダクタのインダクタンスのばらつきを抑制する。 【解決手段】共振器は、積層体２０内に設けられたインダクタ用導体層を含み一方向に長いインダクタ構成部３０１と、積層体２０内に設けられてインダクタ構成部３０１とキャパシタとを電気的に接続するキャパシタ用接続路３０４とを有している。インダクタ構成部３０１の長手方向の両端に位置する第１の端部３０１Ｅと第２の端部３０２Ｅはグランドに接続されている。キャパシタ用接続路３０４は１つ以上のスルーホールを含み、インダクタ構成部３０１の接続箇所３０１Ｃに接続されている。接続箇所３０１Ｃと端部３０１Ｅ，３０１Ｆとの間の距離はキャパシタ用接続路３０４の長さよりも大きい。 【選択図】図６

Method of manufacturing complex metal oxide powder and amorphous complex metal oxide

Insulating material, substrate covered with insulating film, and manufacture and use thereof

(57)【要約】 【課題】 Ｓｉ基板上に高品質なｃ軸配向の強誘電体薄 膜を再現性よく形成することを課題とする。 【解決手段】 Ｓｉ基板２上に（１００）方向優先の配 向性を有するＢｉ 2 ＳｉＯ 5 からなるビスマスシリケー ト膜（絶縁膜）３を形成し、ビスマスシリケート膜３上 に強誘電体薄膜を形成することで、ｃ軸配向の強誘電体 薄膜が再現性よく形成されたＭＦＩＳ構造を得ることが できる。このＭＦＩＳ構造をＦＥＴに使用すれば、信頼 性の高い薄膜素子を得ることができる

Film structure and method for manufacturing the same

A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

分極転送方向選択デバイス

【課題】 従来の強誘電体メモリは不揮発性を利用する強誘電体薄膜がメモリセル毎に孤立している。したがって、不揮発性メモリとして集積度を高める際には強誘電体薄膜も小さな形状に裁断されることとなり、その結果、充分な特性や信頼性が得られず、微細化、高集積化には限界が生ずるという課題があった。 【解決手段】 強誘電体薄膜を連続、一体化した構成をとり、かつ複数個の電極で挟み、強誘電体薄膜の中で分極信号を転送する分極転送デバイスと転送方向を選択する分極転送方向選択デバイスを強誘電体メモリのメモリセル群として用いることにより、強誘電体特性を確保し、微細化、高集積化に適した強誘電体メモリを得る。 【選択図】 図１

強介電體陶瓷及其製造方法

本發明係以提升壓電特性者為課題。 本發明之解決手段如下：本發明之一樣態為一種強介電體陶瓷之製造方法，其係藉由將第1非晶質膜形成於基板上，並在氧氣環境下，於第1溫度對前述第1非晶質膜進行熱處理使其結晶化，將Pb(Zr1-x-zTixNbz)O3膜(105)形成於基板上，並藉由將第2非晶質膜形成於前述Pb(Zr1-x-zTixNbz)O3膜上，在氧氣環境下，於較前述第1溫度更高之第2溫度，對前述第2非晶質膜進行熱處理使其結晶化，將Pb(Zr1-y-zTiyNbz)O3膜(107)形成於前述Pb(Zr1-x-zTixNbz)O3膜上，x、y及z，係滿足下述式1~式3及式11。 0.24<x≦0.45‧‧‧式1 0.45≦y<0.76‧‧‧式2 x+0.05<y‧‧‧式3 0≦z≦0.03‧‧‧式11

圧電体、積層構造体、電子デバイス、電子機器及びこれらの製造方法

【課題】優れたヒステリシス特性を有する圧電体、前記圧電体を含む積層構造体、電子デバイス、電子機器及びこれらを工業的有利に得ることができる製造方法を提供する。【解決手段】結晶基板上に少なくとも化合物膜を形成し、ついで結晶性化合物を含むエピタキシャル膜を積層し、さらに、前記エピタキシャル膜上に、直接又は他の層を介して、導電性金属からなる単結晶膜を積層した後、前記単結晶膜上に、直接又は他の層を介して、圧電膜を積層する際に、前記エピタキシャル膜の積層を、前記化合物膜中の化合物元素を用いて前記エピタキシャル膜を形成することにより行い、前記圧電膜の積層を、蒸着法又はスパッタリングにて行うことで、印加電圧に対する分極量のヒステリシスの中心が、印加電圧１００～３００Ｖの範囲にまでシフトしている圧電体を得る。【選択図】図１