09-03-2017 дата публикации
Номер: US20170067142A1
Принадлежит:
Provided is a structure configured such that even when resin, such as methacryl resin, exhibiting a low adhesion to a metal thin film is used, the resin and the metal thin film are firmly stacked in close contact with each other, and a film formation method capable of manufacturing a structure in which a metal thin film is, with a high adhesion, formed on a resin work exhibiting a low adhesion to the metal thin film, wherein the structure is configured such that an Al thin film is, by sputtering, formed on a work W made of methacryl resin to form a stack of the work W and the Al thin film , and has a mixed region of Al, Si, O, and C between the work W and the Al thin film . In the mixed region , Al is covalently bound to any one of Si, O, and C, or Al, Si, O, and C form a diffusion mixed layer. 116.-. (canceled)17. A structure in which resin and a metal thin film are stacked one another , comprising: which is formed between the resin and the metal thin film, and', 'in which atoms forming the metal thin film are covalently bound to Si, or the atoms forming the metal thin film and Si form a diffusion mixed layer., 'a mixed region'}18. The structure according to claim 17 , wherein at least one of O and C is mixed in addition to the atoms forming the metal thin film and Si, and', 'the atoms forming the metal thin film are covalently bound to any one of Si, O, and C, or the atoms forming the metal thin film and any one of Si, O, and C form the diffusion mixed layer., 'in the mixed region,'}19. A structure in which resin and a metal thin film are stacked one another claim 17 , whereina mixed layer of Si, O, and C, a compound layer containing Si oxide, and a mixed region of atoms forming the metal thin film, Si, and O are, in this order, stacked one another between the resin and the metal thin film.20. The structure according to claim 19 , wherein the atoms forming the metal thin film are covalently bound to Si and O, or', 'the atoms forming the metal thin film, Si, and O ...
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