Two-step deposition process

VOLATILE PRECURSOR COMPOUNDS FOR THE SEPARATION OF METALS AND METALLIFEROUS ONE LAYERS

SYSTEM AND METHOD FOR THE PRODUCTION OF ZIRCONUND/ODER HAFNIUMHÄLTIGER LAYERS

PROCEDURE FOR THE PRODUCTION OF ALUMINUM-BEARING OF FILMS OF MEANS AMINO ALUMINUM PRECURSOREN

Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods

Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Deposition of group iv metal-containing films at high temperature

Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films{nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing fvm depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.

Compositions and methods of use for forming titanium-containing thin films

Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe 2 ) 3 , (ethylcyclopentadienyl)Ti(NMe 2 ) 3 , (isopropylcyclopentadienyl)Ti(NMe 2 ) 3 , (methylcyclopentadienyl)Ti(NEt 2 ) 3 , (methylcyclopentadienyl)Ti(NMeEt) 3 , (ethylcyclopentadienyl)Ti(NMeEt) 3 and (methylcyclopentadienyl)Ti(OMe) 3 ; and at least one liquification co-factor other than the at least one precursor; wherein the at least one liquification co-factor is present in amount sufficient to co-act with the at least one precursor, and in combination with the at least one precursor, forms a liquid composition.

Zirconium, hafnium and titanium precursors for atomic layer deposition of corresponding metal-containing films

A zirconium precursor selected from among compounds of Formulae (I), (II) and (III): wherein: M is Zr, Hf or Ti; R 1 is hydrogen or C 1 -C 5 alkyl; each of R 2 , R′ and R″ is independently selected from C 1 -C 5 alkyl; and n has a value of 0, 1, 2, 3 or 4. Compounds of such formulae are useful in vapor deposition processes such as atomic layer deposition, to form corresponding metal-containing films, e.g., high k dielectric zirconium films in the fabrication of DRAM memory cells.

Multidentate Ketoimine Ligands For Metal Complexes

The present invention is a plurality of metal-containing complexes of a multidentate ketoiminate.

Low temperature deposition of phase change memory materials

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Organometallic compounds

This invention relates to organometallic compounds represented by the formula H a M(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z wherein M is a metal or metalloid, each of R 1 , R 2 and R 3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Metal nitride containing film deposition using combination of amino-metal and halogenated metal precursors

Disclosed are methods of forming metal-nitride-containing films from the combination of amino-metal precursors and halogenated metal precursors, preferably forming SiN-containing films from the combination of aminosilane precursors and chlorosilane precursors. Varying the sequential reaction of the amino-metal precursors and halogenated metal precursors provide for the formation of metal-nitride-containing films having varying stoichiometry. In addition, the metal-nitride-containing film composition may be modified based upon the structure of aminometal precursor. The disclosed processes may be thermal processes or plasma processes at low temperatures.

Halogenated organoaminosilane precursors and methods for depositing films comprising same

Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: X m R 1 n H p Si(NR 2 R 3 ) 4-m-n-p   I wherein X is selected from Cl, Br, I; R 1 is selected from linear or branched C 1 -C 10 alkyl group, a C 2 -C 12 alkenyl group, a C 2 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl, and a C 6 -C 10 aryl group; R 2 is selected from a linear or branched C 1 -C 10 alkyl, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; R 3 is selected from a branched C 3 -C 10 alkyl group, a C 3 -C 12 alkenyl group, a C 3 -C 12 alkynyl group, a C 4 -C 10 cyclic alkyl group, and a C 6 -C 10 aryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein R 2 and R 3 are linked or not linked to form a ring.

Plasma-enhanced deposition of titanium-containing films for various applications using amidinate titanium precursors

The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

Apparatus and Methods for Deposition Reactors

An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented. 125-. (canceled)26. An apparatus comprising:a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions;a first pulsing valve embedded into the precursor source configured to control feeding of precursor vapor from the precursor source to a reaction chamber comprised by the reactor containing the substrate, the apparatus being configured to:convey inactive gas to a precursor source cartridge to raise pressure and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.27. The apparatus of claim 26 , wherein the apparatus is configured to:close the precursor cartridge after the pressure raise until the commencement of a next precursor pulse period, and further configured to:open a route towards the reaction chamber via the pulsing valve upon commencement of the next precursor pulse period.28. The apparatus of claim 26 , further comprising a second pulsing valve embedded into the precursor source configured to control feeding of precursor vapor from the precursor source to a reaction chamber comprised by the reactor containing the substrate.29. The apparatus of claim 28 , wherein the apparatus is configured to:convey inactive gas via the second pulsing valve to the precursor source cartridge to raise pressure and to ease subsequent flow of a ...

Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors

A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate. 137-. (canceled)38. A method of forming a material over a substrate comprising performing at least one iteration of the following temporally separated ALD-type sequence:contacting an outermost surface of a substrate with a first precursor to chemisorb a first species onto the outermost surface from the first precursor, the first precursor comprising a central atom and at least two different composition ligands;contacting the outermost surface with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor, the second precursor comprising a central atom and ligands, the central atoms of the first and second precursors being different; andcontacting the chemisorbed first species and the chemisorbed second species with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.39. The method of wherein all of the ligands of the second precursor are of the ...

Niobium and vanadium organometallic precursors for thin film deposition

Compound of the formula Cp(R 1 ) m M(NR 2 2 ) 2 (═NR 3 ) (I): wherein: M is a metal independently selected from Vanadium (V) or Niobium (Nb) and m≦5; R 1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R 2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R 3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom.

Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

Deposition Of N-Metal Films Comprising Aluminum Alloys

Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl 4 , TaCl 5 and HfCl 4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy) 3-a AlH a ] n , wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

ATOMIC LAYER DEPOSITION OF RHENIUM CONTAINING THIN FILMS

Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials. 1. A method for depositing a thin film comprising rhenium sulfide on a substrate , the method comprising two or more sequential deposition cycles each comprising alternately and sequentially contacting the substrate with a vapor-phase rhenium precursor comprising a rhenium halide compound and a vapor-phase sulfur reactant.2. The method of claim 1 , wherein the method is an atomic layer deposition (ALD) process.3. The method of claim 1 , wherein the method is a sequential or pulsed chemical vapor deposition (CVD) process.4. The method of claim 1 , wherein the vapor-phase rhenium precursor comprises ReClor ReF.5. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises hydrogen and sulfur.6. The method of claim 1 , wherein the vapor-phase sulfur reactant is an alkylsulfur compound.7. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises elemental sulfur.8. The method of claim 1 , wherein the vapor-phase sulfur reactant has the formula R—S—H claim 1 , wherein R is a substituted or unsubstituted hydrocarbon.9. The method of claim 8 , wherein R is a C1-C8 alkyl or substituted alkyl10. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises HS claim 1 , wherein n is from 4 to 10.11. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises one or more of HS claim 1 , (CH)S claim 1 , (NH)S claim 1 , ((CH)SO) claim 1 , and HS.12. The method of claim 1 , wherein the vapor-phase sulfur reactant comprises (NH)S.13. The method of ...

ENHANCED DEPOSITION OF LAYER ON SUBSTRATE USING RADICALS

Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules. 1. A method of performing atomic layer deposition , comprising:generating radicals of a gas or a mixture of gases;injecting the generated radicals onto a surface of a substrate to increase a number of nucleation sites on the substrate by placing the surface of the substrate in a reactive state;injecting a first source precursor onto the surface of the substrate placed in the reactive state, adsorption of the first source precursor on the substrate facilitated by increase in the number of nucleation sites; andinjecting a first reactant precursor onto the substrate injected with the first source precursor to deposit a layer on the surface of the substrate.2. The method of claim 1 , wherein the gas or mixture of gases comprise inert gas.3. The method of claim 2 , wherein the inert gas is Argon.4. The method of claim 1 , further comprising:injecting the generated radicals onto the surface of the substrate deposited with the layer;injecting a second source precursor onto the surface of the substrate deposited with the layer; andinjecting a second reactant precursor onto the surface of the substrate deposited with the layer to deposit another layer.5. The method of claim 4 , wherein the second source precursor is a same material as the first source precursor claim 4 , ...

BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)MOLYBDENUM MOLECULES FOR DEPOSITION OF MOLYBDENUM-CONTAINING FILMS

Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed. 1. An atomic layer deposition method for forming a molybdenum-containing film on a substrate , the method comprising:{'sub': 2', '2, 'introducing a molybdenum-containing precursor into a vapor deposition chamber containing a substrate, the molybdenum-containing precursor having the formula Mo(NR)(NHR′), wherein R and R′ are independently chosen from the group consisting of a C1-C4 alkyl group, a C1-04 perfluoroalkyl group, and an alkylsilyl group; and'}depositing at least part of the molybdenum-containing precursor on the substrate by atomic layer deposition to form the molybdenum-containing film.2. The atomic layer deposition method of claim 1 , wherein the molybdenum-containing precursor is selected from the group consisting of Mo(NMe)(NHMe) claim 1 , Mo(NMe)(NHEt) claim 1 , Mo(NMe)(NHPr) claim 1 , Mo(NMe)(NHiPr) claim 1 , Mo(NMe)(NHBu) claim 1 , Mo(NMe)(NHiBu) claim 1 , Mo(NMe)(NHsBu) claim 1 , Mo(NMe)(NHtBu) claim 1 , Mo(NMe)(NHtAmyl) claim 1 , Mo(NEt)(NHMe) claim 1 , Mo(NEt)(NHEt) claim 1 , Mo(NEt)(NHPr) claim 1 , Mo(NEt)(NHiPr) claim 1 , Mo(NEt)(NHBu) claim 1 , Mo(NEt)(NHiBu) claim 1 , Mo(NEt)(NHsBu) claim 1 , Mo(NEt)(NHtBu) claim 1 , Mo(NEt)(NHtAmyl) claim 1 , Mo(NPr)(NHMe) claim 1 , Mo(NPr)(NHEt) claim 1 , Mo(NPr)(NHPr) claim 1 , Mo(NPr)(NHiPr) claim 1 , Mo(NPr)(NHBu) claim 1 , Mo(NPr)(NHiBu) claim 1 , Mo(NPr)(NHsBu) claim 1 , Mo(NPr)(NHtBu) claim 1 , Mo(NPr)(NHtAmyl) claim 1 , Mo(NiPr)(NHMe) claim 1 , Mo(NiPr)(NHEt) claim 1 , Mo(NiPr)(NHPr) claim 1 , Mo(NiPr)(NHiPr) claim 1 , Mo(NiPr)(NHBu) claim 1 , Mo(NiPr)(NHiBu) claim 1 , Mo(NiPr)(NHsBu) claim 1 , Mo(NiPr)(NHtBu) claim 1 , Mo(NiPr)(NHtAmyl) claim 1 , Mo(NBu)(NHMe) claim 1 , Mo(NBu)(NHEt) claim 1 , Mo(NBu)(NHPr) claim 1 , Mo(NBu)(NHiPr) claim 1 , Mo(NBu)(NHBu) claim 1 , Mo(NBu)(NHiBu) claim 1 , Mo(NBu)(NHsBu) claim 1 , Mo(NBu)(NHtBu) claim 1 , Mo(NBu)( ...

Tin-Containing Precursors and Methods of Depositing Tin-Containing Films

Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

Deposition of Molybdenum Thin Films Using A Molybdenum Carbonyl Precursor

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods. 1. A method for forming a molybdenum-containing film by a deposition process , the method comprising delivering at least one organometallic precursor of the formula [CH(Cl)P]Mo(CO)to a substrate.2. The method of claim 1 , wherein the deposition process is chemical vapor deposition or atomic layer deposition.3. The method of claim 2 , wherein the chemical vapor deposition is selected from the group consisting of pulsed chemical vapor deposition claim 2 , liquid injection chemical vapor deposition claim 2 , and continuous flow chemical vapor deposition and the atomic layer deposition is liquid injection atomic layer deposition or plasma-enhanced atomic layer deposition.4. (canceled)5. (canceled)6. (canceled)7. The method of claim 1 , wherein the substrate is at a temperature from 250° C. to 450° C.8. The method of claim 7 , wherein the temperature is a temperature from 300° C. to 350° C.9. The method of claim 8 , wherein the temperature is a temperature from 330° C. to 345° C.10. The method of claim 1 , wherein the deposition process is conducted in a chamber pressure from 0.2 Torr to 10 Torr.11. The method of claim 10 , wherein the pressure is a pressure from 0.7 Torr to 2 Torr.12. The method of claim 10 , wherein the pressure is a pressure from 0.7 Torr to 1.3 Torr.13. The method of claim 1 , wherein the substrate is exposed to hydrogen for at least 2 seconds for every 1 second of organometallic precursor exposure.14. The method of claim 13 , wherein the substrate is exposed to hydrogen for at least 14 seconds for every 1 second of organometallic precursor exposure.15. The method of claim 14 , wherein the substrate is exposed to hydrogen for at least 100 seconds for every 1 second of ...

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Deposition And Etch Processes Of Chromium-Containing Thin Films For Semiconductor Manufacturing

Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described. 2. The method of claim 1 , wherein the chromium precursor and the reactant are exposed to the substrate separately.3. The method of claim 2 , wherein the chromium precursor and an oxygenating agent are separated temporally.4. The method of claim 2 , wherein the chromium precursor and an oxygenating agent are separated spatially.5. The method of claim 1 , wherein the chromium precursor comprises a homoleptic chromium-diazadiene complexes includes compounds with the general formula Cr(DAD) claim 1 , where DAD is a diazadiene.9. The method of claim 8 , wherein the chromium precursor comprises a heteroleptic chromium-diazadiene complex.10. The method of claim 8 , wherein the chromium precursor comprises a homoleptic chromium-diazadiene complex.11. The method of claim 10 , wherein the chromium precursor comprises bis(1 claim 10 ,4-ditertbutyldiazadienyl)chromium(II).12. The method of claim 1 , wherein the film comprises one or more of chromium metal claim 1 , an oxide claim 1 , nitride claim 1 , carbide claim 1 , boride or silicide.13. The method of claim 1 , wherein the reactant comprises one or more of an alcohol claim 1 , ammonia claim 1 , molecular hydrogen claim 1 , hydrazine claim 1 , substituted hydrazine claim 1 , substituted cyclohexadiene claim 1 , substituted dihydropyrazine claim 1 , aluminum-containing molecules or plasma ...

CHALCOGENIDE FILMS FOR SELECTOR DEVICES

Methods are provided for depositing doped chalcogenide films. In some embodiments the films are deposited by vapor deposition, such as by atomic layer deposition (ALD). In some embodiments a doped GeSe film is formed. The chalcogenide film may be doped with carbon, nitrogen, sulfur, silicon, or a metal such as Ti, Sn, Ta, W, Mo, Al, Zn, In, Ga, Bi, Sb, As, V or B. In some embodiments the doped chalcogenide film may be used as the phase-change material in a selector device. 1. An atomic layer deposition (ALD) method for forming a selector device comprising depositing a doped chalcogenide film on a substrate by a process comprising multiple deposition cycles in which the substrate is alternately and sequentially contacted with two or more reactants for forming the chalcogenide film , and wherein the substrate is contacted with a third dopant precursor in one or more of the deposition cycles.2. The method of claim 1 , wherein the substrate is alternately and sequentially contacted with each of the reactants in the one or more of the deposition cycles.3. The method of claim 1 , wherein the ALD method comprises two or more deposition cycles in which the substrate is alternately and sequentially contacted with the first reactant claim 1 , the second reactant and the dopant precursor to form the doped chalcogenide film.4. The method of claim 1 , wherein the ALD method comprises a first primary deposition sub-cycle in which the substrate is alternately and sequentially contacted with the first reactant and a second reactant to form a chalcogenide material and a second dopant sub-cycle in which the substrate is contacted with the dopant precursor.5. The method of claim 4 , wherein the substrate is alternately and sequentially contacted with one or both of the first and second reactants and the dopant precursor in the dopant sub-cycle.6. The method of claim 4 , wherein the dopant sub-cycle is provided at one or more intervals in the ALD method to obtain the desired dopant ...

METHOD FOR MANUFACTURING MOLYBDENUM-CONTAINING THIN FILM AND MOLYBDENUM-CONTAINING THIN FILM MANUFACTURED THEREBY

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process. 1. A method of manufacturing a molybdenum-containing thin film , the method comprising:using a molybdenum(0)-based hydrocarbon compound as a precursor for depositing a thin film, andusing iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof as a reaction gas to manufacture the molybdenum-containing thin film.2. The method of claim 1 , wherein the method is performed by atomic layer deposition (ALD) claim 1 , chemical vapor deposition (CVD) claim 1 , metalorganic chemical vapor deposition (MOCVD) claim 1 , low pressure chemical vapor deposition (LPCVD) claim 1 , plasma-enhanced chemical vapor deposition (PECVD) claim 1 , or plasma-enhanced atomic layer deposition (PEALD).3. The method of claim 1 , wherein the method includes:a) maintaining a temperature of a substrate mounted in a chamber at 80 to 500° C.;b) injecting a carrier gas and the molybdenum(0)-based hydrocarbon compound; andc) injecting a reaction gas which is iodine, (C1-C3)alkyl iodide, iodo silane, or a mixture thereof to manufacture the molybdenum-containing thin film on the substrate.4. The method of claim 1 , wherein the reaction gas is used at 0.1 to 200 mol claim 1 , based on 1 mol of the molybdenum(0)-based hydrocarbon compound.5. The method of claim 3 , further comprising claim 3 , after c) claim 3 , performing heat treatment.6. The method of claim 5 , wherein the heat treatment is performed at 200 to 700° C.8. The method of claim 1 , wherein the reaction gas is I claim 1 , CHI claim 1 , CHI claim 1 , CHI claim 1 , CHCHI claim 1 , CHCHI claim 1 , ICHCHI claim 1 , CHCHCHI claim 1 , ...

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of:M(=O)2(OR)2  Formula I,M(=O)(NR2)4  Formula II,M(=O)2(NR2)2  Formula III,M(=NR)2(OR)2  Formula IV, andM(=O)(OR)4  Formula V,wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR′3, wherein R′ is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Structures and methods for use in photolithography

Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

Carbon-free laminated hafnium oxide/zirconium oxide films for ferroelectric memories

Provided are carbon-free (i.e., less than about 0.1 atomic percentage of carbon) Zr doped HfO2 films, where Zr can be up to the same level of Hf in terms of atomic percentage (i.e., 1% to 60%). The Zr doping can be achieved also by nanometer m laminated ZrO2 and HfO2 films useful in ferroelectric memories (FeRAM). The laminated films are comprised of about 5 to 10 layers of HfO2 and ZrO2 (i.e., alternating) films, each of which for example can be a thickness of about 1 to about 2 nm, wherein the laminated films are a total of about 5 to 10 nm in thickness.

RAW MATERIAL FOR FORMING THIN FILM BY ATOMIC LAYER DEPOSITION METHOD, METHOD OF PRODUCING THIN FILM, AND ALKOXIDE COMPOUND

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): 2. A method of producing a thin-film containing a tin atom on a surface of a substrate by an atomic layer deposition method ,the method comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'vaporizing the thin-film forming raw material of , which is used in an atomic layer deposition method, followed by deposition of the raw material on the surface of the substrate to form a precursor thin-film; and'}causing the precursor thin-film to react with a reactive gas to form the thin-film containing a tin atom on the surface of the substrate. The present invention relates to a thin-film forming raw material, which is used in an atomic layer deposition method, containing an alkoxide compound having a specific structure, a method of producing a thin-film, and an alkoxide compound.A thin-film containing a tin atom shows specific electrical characteristics. Accordingly, the thin-film containing a tin atom has been applied to various applications including a transparent electrode, a resistance film, and a barrier film.As a method of producing a thin-film, there are given, for example, a sputtering method, an ion plating method, an MOD method, such as a coating thermal decomposition method and a sol-gel method, and a CVD method. Of those, an atomic layer deposition method (hereinafter sometimes referred to as ALD method) is an optimum production process because the atomic layer deposition method has a number of advantages, such as excellent composition controllability and step coverage, suitability for mass production, and capability of hybrid integration.Various materials that can be used in vapor phase thin-film formation methods, such as the CVD method and the ALD method, have been reported. A thin-film forming raw material applicable to the ALD method is required to have a ...

METHOD OF PRODUCING HIGH BULK DENSITY MOLYBDENUM OXYCHLORIDE

Provided is a method of producing a high purity molybdenum oxychloride by including means of sublimating and reaggregating a raw material molybdenum oxychloride in a reduced-pressure atmosphere, or means of retaining a gaseous raw material molybdenum oxychloride, which was synthesized in a vapor phase, in a certain temperature range, and thereby growing crystals to obtain a higher purity molybdenum oxychloride having a high bulk density and high hygroscopicity resistance. 1. A method of producing a molybdenum oxychloride comprising the steps of heating a raw material molybdenum oxychloride , which is a crystal powder , at a temperature range of 70° C. or higher and 150° C. or less in a reduced-pressure atmosphere , sublimating a molybdenum oxychloride from the raw material , and cooling/reaggregating a product thereof to obtain molybdenum oxychloride having a bulk density that is higher than that of the raw material.2. The method of producing a molybdenum oxychloride according to claim 1 , wherein the reduced-pressure atmosphere is an atmosphere of a pressure of 1 kPa or more and 20 kPa or less.3. A method of producing a molybdenum oxychloride comprising the steps of retaining a gaseous raw material molybdenum oxychloride claim 1 , which was synthesized based on a reaction of a molybdenum oxide powder and chlorine gas at 700° C. or higher in a vapor phase claim 1 , at a temperature range of 40° C. or higher and 120° C. or less in an atmospheric pressure claim 1 , growing crystals of molybdenum oxychloride from the raw material claim 1 , and obtaining a molybdenum oxychloride having a bulk density that is higher than that of the raw material.4. The method of producing a molybdenum oxychloride according to claim 3 , wherein the molybdenum oxychloride is one among molybdenum dichloride dioxide (MoOCl) claim 3 , molybdenum trichloride oxide (MoOCl) or molybdenum tetrachloride oxide (MoOCl).5. The method of producing a molybdenum oxychloride according to claim 4 , ...

DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor. 1. A method of forming a photoresist layer over a substrate , comprising:forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, wherein a flowrate of the first metal precursor vapor and the first oxidant vapor is non-uniform across a surface of the substrate; andforming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor, wherein a flowrate of the second metal precursor vapor and the second oxidant vapor is non-uniform across the surface of the substrate.2. The method of claim 1 , wherein a material composition of the first metal oxo film is different than a material composition of the second metal oxo film.3. The method of claim 1 , wherein a thickness of the first metal oxo film is approximately 5 nm or less.4. The method of claim 3 , wherein the first metal precursor vapor is different than the second metal precursor vapor claim 3 , and/or the first oxidant vapor is different than the second oxidant vapor.5. The method of claim 1 , wherein the first vapor phase process and the second vapor phase process are chemical vapor deposition (CVD) processes claim 1 , plasma enhanced CVD (PE-CVD) processes claim 1 , atomic layer deposition (ALD) processes claim 1 , or plasma enhanced ALD (PE-ALD) processes.6. The method of claim 1 , wherein a temperature of the substrate is between approximately 0° C. and ...

Process for producing flexible organic-inorganic laminates

Processes for producing flexible organic-inorganic laminates by atomic layer deposition are described, as well as barrier films comprising flexible organic-inorganic laminates. In particular, a process for producing a laminate including (a) depositing an inorganic layer by an atomic layer deposition process, and (b) depositing an organic layer comprising selenium by a molecular layer deposition process is provided.

METHODS FOR FORMING A RHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Methods for forming a rhenium-containing film on a substrate by a cyclical deposition are disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a rhenium precursor; and contacting the substrate with a second vapor phase reactant. Semiconductor device structures including a rhenium-containing film formed by the methods of the disclosure are also disclosed. 1. A method for forming a rhenium-containing film on a substrate by a cyclical deposition process , the method comprising:contacting the substrate with a first vapor phase reactant comprising a rhenium oxyhalide precursor, an alkyl rhenium oxide precursor, a cyclopentadienyl based rhenium precursor, or a rhenium carbonyl halide precursor; andcontacting the substrate with a second vapor phase reactant,wherein the rhenium-containing film comprises boron, sulfur, carbon, nitrogen, phosphorus, or a combination thereof.2. The method of claim 1 , wherein the rhenium-containing film comprises at least one of a rhenium boride film claim 1 , a rhenium sulfide film claim 1 , a rhenium carbide film claim 1 , a rhenium nitride film claim 1 , and a rhenium phosphide film.3. The method of claim 1 , wherein the second vapor phase reactant comprises at least one of an oxygen containing precursor claim 1 , a boron containing precursor claim 1 , a sulfur containing precursor claim 1 , and a hydrogen containing precursor.4. The method of claim 1 , further comprising forming a conductive capping layer over a surface of the rhenium-containing film.5. The method of claim 4 , wherein the conductive capping layer comprises at least one of a titanium nitride claim 4 , a rhenium boride claim 4 , a rhenium carbide claim 4 , a rhenium phosphide claim 4 , a rhenium nitride claim 4 , a tantalum nitride claim 4 , tantalum claim 4 , a tungsten carbide claim 4 , molybdenum claim 4 , or a niobium boride.6. The method of claim 1 , wherein the rhenium-containing film comprises a rhenium boron carbide ...

Methods For Atomic Layer Deposition Of SiCO(N) Using Halogenated Silylamides

Methods for the formation of films comprising Si, C, O and N are provided. Certain methods involve sequential exposures of a hydroxide terminated substrate surface to a silicon precursor and an alcohol-amine to form a film with hydroxide terminations. Certain methods involved sequential exposures of hydroxide terminated substrate surface to a silicon precursor and a diamine to form a film with an amine terminated surface, followed by sequential exposures to a silicon precursor and a diol to form a film with a hydroxide terminated surface. 1. A method of depositing a film comprising Si , C , O and N , the method comprising:exposing a substrate surface to a silicon precursor to form a film with silicon-halogen terminations, wherein the silicon precursor comprises a halogenated silyl amide; andexposing the film with silicon-halogen terminations to an alcohol-amine to form a film comprising —OH terminations.2. The method of claim 1 , wherein the silicon precursor comprises substantially no Si—C bonds.3. The method of claim 1 , wherein the silicon precursor comprises a compound having the general formula XSi(NRR′) claim 1 , where n is 1-3 claim 1 , each X is independently F claim 1 , Cl claim 1 , Br or I claim 1 , each of R and R′ is an alkyl or aryl having in the range of 1 to 8 carbon atoms.4. The method of claim 3 , wherein each X is selected from Br or I.5. The method of claim 1 , wherein the alcohol-amine has a general formula HN—R″—OH claim 1 , where R″ is an alkyl claim 1 , alkyenyl or alkynyl group having in the range of 1 to 16 carbons atoms.6. The method of claim 5 , wherein R″ has in the range of 2 to 8 carbon atoms.7. The method of claim 6 , wherein R″ has in the range of 2 to 4 carbon atoms.8. The method of claim 1 , further comprising repeating exposures to the silicon precursor and alcohol-amine to form a film having a predetermined thickness.9. A method of depositing a film comprising Si claim 1 , C claim 1 , O and N claim 1 , the method comprising: ...

Tin oxide thin film spacers in semiconductor device manufacturing

Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.

METHODS FOR FORMING A METALLIC FILM ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes. 121-. (canceled)22. A system for forming a metallic film on a substrate , comprising:a reaction chamber constructed and arranged to hold the substrate therein;a first precursor reactant source fluidly coupled to the reaction chamber, wherein the first precursor reactant source is constructed and arranged to hold a non-halogen containing metal precursor comprising at least one of copper, nickel, or cobalt, wherein the non-halogen containing metal precursor comprises at least one ligand bonded to a metal atom through at least one oxygen atom and at least one nitrogen atom;a second precursor reactant source fluidly coupled to the reaction chamber, wherein the second precursor reactant source is constructed and arranged to hold a hydrocarbon substituted hydrazine precursor; anda system operation and control in electronic communication with the first precursor reactant source and the second precursor reactant source, wherein the system operation and control is configured to selectively allow the non-halogen containing metal precursor to flow from the first precursor reactant source to the reaction chamber and the hydrocarbon substituted hydrazine precursor to flow from the second precursor reactant source to the reaction chamber.23. The system of claim 22 , further comprising a purge gas source fluidly coupled to the reaction chamber constructed and arranged to hold a purge gas.24. The system of claim 22 , wherein the purge gas comprises at ...

Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES

Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). 1. A plasma enhanced atomic layer deposition method of depositing a silicon nitride thin film on a three-dimensional structure on a substrate in a reaction space , the method comprising a plurality of deposition cycles , each deposition cycle comprising:(a) introducing a vapor-phase silicon reactant into the reaction space so that a silicon precursor is adsorbed on a surface of the substrate;(b) moving the substrate;(c) exposing the substrate surface to reactive species generated by a plasma from a nitrogen precursor; and(d) moving the substrate;wherein the deposition cycle is repeated to form the silicon nitride thin film; andwherein the silicon nitride film has a uniform etch rate on the vertical and horizontal portions of the three-dimensional structure.2. The method of claim 1 , wherein the silicon reactant comprises a precursor having a formula:{'br': None, 'sub': 2n+2−y−z−w', 'n', 'y', 'z', 'w, 'HSiIAR'} {'br': None, 'sub': 2n−y−z−w', 'n', 'y', 'z', 'w, 'HSiIAR'}, 'wherein, n=1-10, y=from 1 up to 2n+2−z−w, z=from 0 up to 2n+2−y−w, w=from 0 up to 2n+2−y−z, A is a halogen other than I, and R is an organic ligand and can be independently selected from the group consisting of alkoxides, alkylsilyls, alkyl, substituted alkyl, alkylamines and unsaturated hydrocarbon;'} {'br': None, 'sub': 2n+2−y−z−w', 'n', 'y', 'z', 'w, 'sup': 'II', 'HSiIAR'}, 'wherein, the silicon-containing precursor is a cyclic compound, n=3-10, y ...

ALD OF METAL-CONTAINING FILMS USING CYCLOPENTADIENYL COMPOUNDS

Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand. 131-. (canceled)32. A plasma enhanced atomic layer deposition process for producing a metal containing thin film on a substrate comprising alternately and sequentially contacting the substrate with vapor phase pulses of at least one volatile metal containing cyclopentadienyl compound , and a second reactant at a temperature that is low enough to prevent decomposition of the metal containing cyclopentadienyl compound and the second reactant , wherein the metal comprises zirconium , and wherein the metal containing cyclopentadienyl compound does not contain a metal directly bonded to a halide or oxygen atom , and wherein the metal containing cyclopentadienyl compound comprises at least one cyclopentadienyl bonded to the metal and at least one ligand that is separately bonded to the metal via nitrogen.33. The process of claim 32 , wherein the metal containing cyclopentadienyl compound has the formula: (RRRRRCp)-MR—(NRR)wherein M is zirconium;{'sup': 1', '2', '3', '4', '5', '0, 'wherein each R, R, R, R, R, and Ris independently selected from(i) hydrogen;{'sub': 1', '20, '(ii) linear and branched C-Calkyl, alkenyl and alkynyl groups, which are independently substituted or unsubstituted;'}(iii) carbocyclic groups, such as aryl, phenyl, cyclopentadienyl, alkylaryl, and halogenated carbocyclic groups; and(iv) heterocyclic groups; andwherein both x and y are ≧ ...

Deposition of Metal Films Using Beta-Hydrogen Free Precursors

Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR), M(XR), M(XR), M(XR)and M(XR)where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H. 2. The method of claim 1 , wherein M is Al.3. The method of claim 1 , wherein each X is independently C claim 1 , Si or Ge.4. The method of claim 1 , wherein each R is independently an alkyl.5. The method of claim 1 , wherein exposing the substrate surface to the first precursor and the reactant occurs sequentially.6. The method of claim 1 , wherein exposing the substrate surface to the first precursor and the reactant occurs simultaneously.7. The method of claim 1 , wherein the reactant comprises a metal halide.8. The method of claim 1 , wherein the metal-containing film comprises a substantially pure metal.9. The method of claim 1 , wherein the metal-containing film comprises a substantially pure metal alloy.10. The method of claim 1 , wherein the metal-containing film comprises a metal nitride.11. The method of claim 1 , wherein the metal-containing film comprises a metal oxide.13. The method of claim 12 , wherein the film comprises substantially pure aluminum.14. The method of claim 12 , wherein the film comprises substantially pure aluminum alloy.15. The method of claim 12 , wherein the reactant comprises the compound with the general structure and the film comprises substantially no aluminum.16. The method of claim 12 , wherein the first precursor and the reactant are sequentially exposed to the substrate surface.17. The method of claim 12 , wherein the first precursor and the reactant are exposed to the substrate surface at the same time.18. The method of ...

OXYGEN-FREE ATOMIC LAYER DEPOSITION OF INDIUM SULFIDE

A method for synthesizing an In(III) N,N′-diisopropylacetamidinate precursor including cooling a mixture comprised of diisopropylcarbodiimide and diethyl ether to approximately −30° C., adding methyllithium drop-wise into the mixture, allowing the mixture to warm to room temperature, adding indium(III) chloride as a solid to the mixture to produce a white solid, dissolving the white solid in pentane to form a clear and colorless solution, filtering the mixture over a celite plug, and evaporating the solution under reduced pressure to obtain a solid In(III) N,N′-diisopropylacetamidinate precursor. This precursor has been further used to develop a novel atomic layer deposition technique for indium sulfide by dosing a reactor with the precursor, purging with nitrogen, dosing with dilute hydrogen sulfide, purging again with nitrogen, and repeating these steps to increase growth. 1. A method for synthesizing an In(III) N ,N′-diisopropylacetamidinate precursor , the method comprising:cooling a mixture comprised of diisopropylcarbodiimide and a first solvent to approximately −30° C.;adding methyllithium drop-wise into the mixture;allowing the mixture to warm to room temperature;adding indium(III) chloride as a solid to the mixture to produce a white solid;dissolving the white solid in a second solvent to form a clear and colorless solution; andevaporating the solution under reduced pressure to obtain a solid In(III) N,N′-diisopropylacetamidinate precursor.2. The method of claim 1 , wherein the first solvent is diethyl ether and the second solvent is pentane.3. The method of claim 1 , further comprising allowing a reaction of the mixture comprised of diisopropylcarbodiimide claim 1 , diethyl ether claim 1 , methyllithium and indium(III) chloride to take place overnight at room temperature prior to the evaporating step.4. The method of claim 1 , further comprising removing volatiles under a reduced pressure prior to the evaporating step.5. The method of claim 1 , further ...

Multi-layer coating with diffusion barrier layer and erosion resistant layer

A multi-layer coating for a surface of an article comprising a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiN x , TaN x , Zr 3 N 4 , and TiZr x N y . The erosion resistant layer may be a rare oxide film including but not limited to YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z . The diffusion barrier layer and the erosion resistant layer may be deposited on the article's surface using a thin film deposition technique including but not limited to, ALD, PVD, and CVD.

Methods and Apparatus for Depositing Yttrium-Containing Films

Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films. 1. A method of depositing a film , the method comprising:{'sub': 1', '2', '3', '1', '2', '3, 'exposing a substrate to a yttrium precursor to form a yttrium species on the substrate, the yttrium precursor comprises a complex with a general formula YRRR, where R, Rand Rare independently selected from halides, carbonyl, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes; and'}exposing the substrate to one or more of a nitrogen reactant or an oxygen reactant to react with the yttrium species on the substrate to form one or more of a yttrium nitride or yttrium oxide film.2. The method of claim 1 , wherein the nitrogen reactant comprises one or more of nitrogen claim 1 , ammonia or hydrazine.3. The method of claim 1 , wherein the nitrogen reactant comprises a reactant plasma.4. The method of claim 1 , further comprising exposing the yttrium nitride film on the substrate to a treatment plasma to change a property of the film.5. The method of claim 4 , wherein the treatment plasma comprises one or more of nitrogen claim 4 , argon claim 4 , hydrogen claim 4 , or helium.6. The method of claim 1 , further comprising exposing the substrate to a silicon precursor so that the yttrium species on the substrate is a silicon-yttrium species and after exposure to the nitrogen reactant the film formed is a silicon-yttrium nitride film claim 1 , the silicon precursor comprising a species with a general formula SiXR claim 1 , Si(NRR′)R″ claim 1 , or a siloxane claim 1 , where n is 1 to 4 claim 1 , a is 0 to 2n+2 claim 1 , X is a halide and R claim 1 , R′ and R″ are independently selected from H claim 1 , alkyl or aryl.7. The method of claim 6 , wherein the silicon ...

Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed. 2. The composition of further comprising at least one selected from the group consisting of a solvent and a purge gas.3. The composition of wherein each of Ris independently selected from the group consisting of hydrogen and a Cto Calkyl group.4. The composition of claim 1 , wherein Ris selected from the group consisting of a Cto Ccyclic alkyl group and a Cto Caryl group.6. The composition of claim 1 , wherein the composition is substantially free of one or more impurities selected from the group consisting of a halide claim 1 , metal ions claim 1 , metal claim 1 , and combinations thereof.7. The composition of claim 1 , wherein the organoamino-functionalized cyclic oligosiloxane compound is selected from the group consisting of: 2 claim 1 ,4-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,6-trimethylcyclotrisiloxane claim 1 , 2 claim 1 ,4-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,6 claim 1 ,6-tetramethylcyclotrisiloxane claim 1 , 2 claim 1 ,4-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,6 claim 1 ,8-tetramethylcyclotetrasiloxane claim 1 , 2 claim 1 ,4-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,6 claim 1 ,6 claim 1 ,8 claim 1 ,8-hexamethylcyclotetrasiloxane claim 1 , 2 claim 1 ,6-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,6 claim 1 ,8-tetramethylcyclotetrasiloxane claim 1 , 2 claim 1 ,6-bis(dimethylamino)-2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,8 claim 1 ,8-hexamethylcyclotetrasiloxane claim 1 , 2-dimethylamino-2 claim 1 ,4 claim 1 ,6 claim 1 ,8 claim 1 ,10-pentamethylcyclopentasiloxane claim 1 , 2-dimethylamino-2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6 claim 1 ,8 claim 1 ,8 claim 1 ,10 claim 1 ,10-nonamethylcyclopentasiloxane claim 1 , 2 ...

SURFACE TREATMENT AGENT, SURFACE TREATMENT METHOD, AND AREA SELECTIVE DEPOSITION METHOD

A surface treatment agent including a compound represented by the following general formula (P-1) and an acid. In the formula, Rrepresents a linear or branched alkyl group having 8 or more carbon atoms, a linear or branched fluorinated alkyl group having 8 or more carbon atoms, or an aromatic hydrocarbon group; Rand Reach independently represents a hydrogen atom, a linear or branched alkyl group having 8 or more carbon atoms, a linear or branched fluorinated alkyl group having 8 or more carbon atoms, or an aromatic hydrocarbon group 2. The surface treatment agent according to claim 1 , wherein the acid is a carboxylic acid.3. The surface treatment agent according to claim 1 , wherein the acid is an inorganic acid.4. The surface treatment agent according to claim 1 , wherein said surface treatment agent is used for treating a surface including two or more regions claim 1 , which is made of different materials from each other with respect to adjacent regions of the two or more regions.5. The surface treatment agent according to claim 4 , wherein at least one region of the two or more regions contains a metal surface.7. The surface treatment agent according to claim 6 , wherein said surface treatment agent is used for treating a surface including two or more regions claim 6 , which is made of different materials from each other with respect to adjacent regions of the two or more regions.8. The surface treatment agent according to claim 7 , wherein at least one region of the two or more regions contains a metal surface.9. The surface treatment agent according to claim 8 , wherein the metal is copper.10. A surface treatment method claim 8 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'exposing a surface of a substrate to the surface treatment agent according to ,'}wherein the surface includes two or more regions, which is made of different materials from each other with respect to adjacent regions of the two or more regions, andthe contact angle between ...

Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films

Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed. 2. The method of wherein each of Ris independently selected from hydrogen and a Cto Calkyl group.4. The method of wherein each of Ris independently selected from hydrogen and a Cto Calkyl group.7. The method of wherein each of Ris independently selected from hydrogen and a Cto Calkyl group.8. The method of claim 6 , wherein the at least one silicon precursor compound is selected from the group consisting of 2-dimethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6-pentamethylcyclotrisiloxane claim 6 , 2-diethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6-pentamethylcyclotrisiloxane claim 6 , 2-ethylmethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6-pentamethylcyclotrisiloxane claim 6 , 2-iso-propylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6-pentamethylcyclotrisiloxane claim 6 , 2-dimethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6 claim 6 ,8 claim 6 ,8-heptamethylcyclotetrasiloxane claim 6 , 2-diethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6 claim 6 ,8 claim 6 ,8-heptamethylcyclotetrasiloxane claim 6 , 2-ethylmethylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6 claim 6 ,8 claim 6 ,8-heptamethylcyclotetrasiloxane claim 6 , 2-iso-propylamino-2 claim 6 ,4 claim 6 ,4 claim 6 ,6 claim 6 ,6 claim 6 ,8 claim 6 ,8-heptamethylcyclotetrasiloxane claim 6 , 2-dimethylamino-2 claim 6 ,4 claim 6 ,6-trimethylcyclotrisiloxane claim 6 , 2-diethylamino-2 claim 6 ,4 claim 6 ,6-trimethylcyclotrisiloxane claim 6 , 2-ethylmethylamino-2 claim 6 ,4 claim 6 ,6-trimethylcyclotrisiloxane claim 6 , 2-iso-propylamino-2 claim 6 ,4 claim 6 ,6-trimethylcyclotrisiloxane claim 6 , 2-dimethylamino-2 claim 6 ,4 ...

CHAMFER-LESS VIA INTEGRATION SCHEME

Methods and apparatuses for processing semiconductor substrates in an integration scheme to form chamferless vias are provided herein. Methods include bifurcating etching of dielectric by depositing a conformal removable sealant layer having properties for selective removal relative to dielectric material without damaging dielectric material. Some methods include forming an ashable conformal sealant layer. Methods also include forming hard masks including a Group IV metal and removing conformal removable sealant layers and hard masks in one operation using same etching chemistries. 1. A method comprising:providing a substrate having a trench formed in a dielectric material; anddepositing a selectively removable sealant layer conformally in the trench,wherein the selectively removable sealant layer comprises a Group IV metal.2. The method of claim 1 , wherein the Group IV metal is selected from the group consisting of tin and lead.3. The method of claim 1 , wherein the selectively removable sealant layer is selected from the group consisting of tin oxide claim 1 , tin nitride claim 1 , tin sulfide claim 1 , lead oxide claim 1 , lead nitride claim 1 , lead sulfide claim 1 , and combinations thereof; and wherein the selectively removable sealant layer comprises one or more than one layer.4. The method of claim 1 , further comprising:selectively removing the selectively removable sealant layer relative to the dielectric material using hydrogen gas or an organic acid.5. The method of claim 1 , wherein the trench comprises an opening and a bottom claim 1 , and a distance from the opening to the bottom is at least about 25% of a total thickness of the dielectric material.6. (canceled)7. The method of claim 1 , wherein the substrate further comprises a metal hard mask over the dielectric material.8. The method of claim 1 , further comprising:forming a second patterned hard mask on the selectively removable sealant layer, wherein the second patterned hard mask is removable ...

METHOD OF FORMING STRUCTURES USING A NEUTRAL BEAM, STRUCTURES FORMED USING THE METHOD AND REACTOR SYSTEM FOR PERFORMING THE METHOD

Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer. 1. A method of forming a structure , the method comprising the steps of:forming a layer;{'sub': 2', '2', '2, 'forming a neutral beam generated from one or more gases selected from the group consisting of hydrogen-containing gases, helium, ammonia, oxygen, NO, CO, Ar, Xe, and N; and'}exposing the layer to species generated from the neutral beam.2. The method of claim 1 , wherein the layer comprises one or more of an oxide claim 1 , a nitride claim 1 , and a carbide.3. The method of claim 1 , wherein the layer comprises one or more of SiO claim 1 , SiN claim 1 , SiOC claim 1 , SiCN claim 1 , SiC claim 1 , SiON claim 1 , SiOCN claim 1 , SiBN claim 1 , SiBO claim 1 , GeO claim 1 , GeN claim 1 , AlO claim 1 , TiO claim 1 , and TaO.4. The method of claim 1 , wherein the step of forming a layer comprises depositing material using one or more of PEALD claim 1 , PECVD claim 1 , NBEALD claim 1 , and NBECVD.5. The method of claim 1 , wherein the step of forming a layer comprises depositing material using one or more of NBEALD and NBECVD.6. The method of claim 1 , wherein the step of forming a layer comprises a cyclic deposition process claim 1 , the method further comprising:repeating a number of cycles of the cyclic deposition prior to the step of exposing.7. The method of claim 6 , wherein a thickness of a layer formed during the step of repeating is less than 10 nm.8. The method of claim 1 , further comprising repeating the steps of forming a layer and exposing the layer.9. The method of claim 1 , wherein a reaction chamber temperature during the step of forming a layer is less than 400° C. claim 1 , less than 300° C. claim 1 , less than 200° C. claim 1 , less than 100° C. ...

SEQUENTIAL INFILTRATION SYNTHESIS OF GROUP 13 OXIDE ELECTRONIC MATERIALS

The sequential infiltration synthesis (SIS) of group 13 indium and gallium oxides (InOand GaO) into polymethyl methacrylate (PMMA) thin films is demonstrated. Examples highlight the an SIS process using trimethylindium (TMIn) and trimethylgallium (TMGa), respectively, with water. In situ Fourier transform infrared (FTIR) spectroscopy reveals that these metal alkyl precursors reversibly associate with the carbonyl groups of PMMA in analogy to trimethylaluminum (TMAl), however with significantly lower affinity. SIS with TMIn and water enables the growth of InOat 80° C., well below the onset temperature of atomic layer deposition (ALD) using these precursors. 1. A method depositing a group 13 oxide comprising:providing a base material in a reactor; and pulsing a first metal precursor comprising indium or gallium into the reactor for a first metal precursor pulse time;', 'exposing the base material to the first metal precursor for a first metal precursor exposure time and at a first partial pressure, the first metal precursor infiltrating at least a portion of the base material and binding therein with the base material;', 'purging the reactor of the first metal precursor;', 'pulsing a co-reactant precursor into the reactor for a first co-reactant pulse time;', 'exposing the base material to the co-reactant precursor for a co-reactant precursor exposure time and at a second partial pressure, the co-reactant precursor infiltrating at least a portion of the base material and binding therein to form the oxide; and', 'purging the reactor of the co-reactant precursor., 'depositing an oxide of indium or gallium using sequential infiltration synthesis (SIS) process including at least one cycle of2. The method of claim 1 , wherein the first metal precursor pulse time is greater than 0 seconds to 30 seconds.3. The method of claim 1 , wherein the first metal precursor exposure time is greater than 0 seconds to 500 seconds.4. The method of claim 1 , wherein purging the reactor ...

Semiconductor Device, Method, and Tool of Manufacture

In an embodiment, an apparatus includes: a susceptor including substrate pockets; a gas injector disposed over the susceptor, the gas injector having first process regions, the gas injector including a first gas mixing hub and first distribution valves connecting the first gas mixing hub to the first process regions; and a controller connected to the gas injector and the susceptor, the controller being configured to: connect a first precursor material and a carrier gas to the first gas mixing hub; mix the first precursor material and the carrier gas in the first gas mixing hub to produce a first precursor gas; rotate the susceptor to rotate a first substrate disposed in one of the substrate pockets; and while rotating the susceptor, control the first distribution valves to sequentially introduce the first precursor gas at each of the first process regions as the first substrate enters each first process region. 1. An apparatus comprising:a susceptor comprising substrate pockets;a gas injector disposed over the susceptor, the gas injector having first process regions, the gas injector comprising a first gas mixing hub and first distribution valves connecting the first gas mixing hub to the first process regions; and connect a first precursor material and a carrier gas to the first gas mixing hub;', 'mix the first precursor material and the carrier gas in the first gas mixing hub to produce a first precursor gas;', 'rotate the susceptor to rotate a first substrate disposed in one of the substrate pockets; and', 'while rotating the susceptor, control the first distribution valves to sequentially introduce the first precursor gas at each first process region of the first process regions as the first substrate enters each first process region., 'a controller connected to the gas injector and the susceptor, the controller being configured to2. The apparatus of claim 1 , wherein the controller is located separately from the gas injector.3. The apparatus of claim 1 , ...

Water-insensitive methods of forming metal oxide films and products related thereto

Water-insensitive methods for forming metal oxide films disclosed herein can be used to form coated substrates. The methods can be used with moisture-laden substrates. Moisture-sensitive films can be deposited on the metal oxide films.

COMPOSITION AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed. 1. A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at. % to 30 at. % via a thermal ALD process , the method comprising:a) placing one or more substrates comprising a surface feature into a reactor;b) heating to reactor to one or more temperatures ranging from ambient temperature to about 550° C. and optionally maintaining the reactor at a pressure of 100 torr or less;c) introducing into the reactor at least one silicon precursor having two Si—C—Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,3,3,5,5-hexachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane;d) purging with an inert gas;e) providing a nitrogen source into the reactor to react with the surface to form a carbon doped silicon nitride film;f) purging with inert gas to remove reaction by-products;g) repeating steps c to f to provide a desired thickness of a resulting carbon doped silicon nitride;h) treating the resulting carbon doped silicon nitride film with an oxygen source at one or more temperatures ranging from ...

Systems and Methods for Improving Planarity using Selective Atomic Layer Etching (ALE)

Methods are provided for planarizing a patterned substrate in a spatial atomic layer processing system comprising a rotating platen. The patterned substrate may generally include features having higher regions and lower regions. To planarize the patterned substrate, or reduce a height differential between the higher and lower regions, a selective atomic layer etching (ALE) process is disclosed to preferentially form a modified layer on the higher regions of the features by exposing a surface of the patterned substrate to a precursor gas while the rotating platen spins at a high rotational speed. By preferentially forming the modified layer on the higher regions of the features, and subsequently removing the modified layer, the selective ALE process described herein preferentially etches the higher regions of the features to lessen the height differential between the higher and lower regions until a desired planarization of the features is achieved. 1. A method for planarizing a patterned substrate in a spatial atomic layer processing system , the method comprising:providing at least a first layer as part of the patterned substrate, wherein the first layer comprises at least a portion of one or more features formed on the patterned substrate, wherein the one or more features have higher regions and lower regions, and wherein a height differential exists between the higher regions and the lower regions;providing the patterned substrate on a rotating platen of the spatial atomic layer processing system;forming a modified layer on the first layer, at least one step of the forming the modified layer on the first layer being exposing a surface of the first layer to a first precursor gas, which adsorbs on and reacts with the surface of the first layer to produce the modified layer, wherein spinning the rotating platen at higher rotational speeds aids in the modified layer being preferentially formed onto the higher regions of the one or more features as compared to the ...

Semiconductor Device and Method of Manufacture

A semiconductor device and method of manufacture are provided. In embodiments a dielectric fin is formed in order to help isolate adjacent semiconductor fins. The dielectric fin is formed using a deposition process in which deposition times and temperatures are utilized to increase the resistance of the dielectric fin to subsequent etching processes.

MANUFACTURING METHOD FOR GATE ELECTRODE AND THIN FILM TRANSISTOR AND DISPLAY PANEL

The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern. 1. A manufacturing method for a gate electrode , comprising:depositing an aluminum film on a substratum by physical vapor deposition;depositing a molybdenum film over the aluminum film by atomic layer deposition; andetching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.2. The manufacturing method for the gate electrode according to claim 1 , wherein the thickness of the deposited aluminum film is 3500 Å-4500 Å.3. The manufacturing method for the gate electrode according to claim 1 , wherein depositing the molybdenum film over the aluminum film by atomic layer deposition comprising:placing the substratum with the aluminum film in a reaction chamber of an atomic layer deposition apparatus;continuously introducing a molybdenum precursor for a preset time period into the atomic layer deposition apparatus, remaining the molybdenum precursor for a preset time period after the introduction, and introducing an inert gas for purging;continuously introducing a reducing gas for a preset time into the atomic layer deposition apparatus, remaining the reducing gas for a preset time period after the introduction, and introducing the inert gas for purging; andrepeating the steps B and C for a preset number of times to form the molybdenum film.4. The manufacturing method for the gate electrode according to claim 3 , wherein the molybdenum precursor is at least one of molybdenum hexacarbonyl claim 3 , molybdenum chloride claim 3 , molybdenum fluoride; the reducing gas comprises a plasma H;the inert gas comprises at least one of argon and ...

Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH)N—SiH—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C-Csaturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed. 1. An ALD silicon and oxygen containing film formation process , the process comprising the steps of:{'sub': 3', '2', '2', '2', '1', '6', '3', '1', '6, 'depositing a silicon and oxygen containing film on a substrate by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH)N—SiH—X, wherein X is a halogen atom or an amino group [—NR] and each R is independently selected from the group consisting of H; a C-Chydrocarbyl group; or a silyl group [SiR′] with each R′ being independently selected from H or a C-Chydrocarbyl group.'}2. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is Cl.3. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NiPr.4. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NEt.5. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is N(SiH).6. The ALD silicon and oxygen containing film formation process of claim 1 , wherein the oxygen-containing reactant is selected from the group consisting of O claim 1 , O claim 1 , HO claim 1 , HO claim 1 , NO claim 1 , NO claim 1 , NO claim 1 , alcohols claim 1 , diols claim 1 , carboxylic acids claim 1 , ketones claim 1 , ethers claim 1 , O atoms claim 1 , O radicals claim 1 , O ions claim 1 , and combinations thereof.7. The ALD silicon and oxygen containing film formation process of claim 6 , wherein the oxygen-containing reactant is ...

Method to improve precursor utilization in pulsed atomic layer processes

A method and system is provided to improve precursor utilization in pulsed atomic layer processes. The system integrates a chiller with a precursor ampoule to lower the temperature of the precursor ampoule, and thereby reduce the precursor vapor pressure. By lowering the ampoule temperature, the loss of excess unreacted precursor molecules is reduced, in order to improve precursor utilization efficiency in atomic layer processes.

COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICON-CONTAINING FILMS

Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of RN(SiRLH), wherein R, R, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD). 13-. (canceled)4. A method of forming a carbon-doped silicon nitride film via an atomic layer deposition process , the method comprising the steps of:a. providing a substrate in a reactor;{'sup': 9', '9, 'sub': '2', 'b. introducing into the reactor a precursor comprising at least one organoaminosilane having a formula of RN(SiRLH), wherein'}{'sup': '8', 'Ris selected from the group consisting of a C1 to C10 linear or branched alkyl group, a C3 to C10 cyclic alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, a C5 to C10 aromatic group, and a C3 to C10 saturated or unsaturated heterocyclic group;'}{'sup': '9', 'Rselected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, a C3 to C10 cyclic alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, a C5 to C10 aromatic group, and a C3 to C10 saturated or unsaturated heterocyclic group; and'}L is selected from the group consisting of Cl, Br, and I;c. purging the reactor with a purge gas;d. introducing a nitrogen source into the reactor wherein the nitrogen source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma, and mixture thereof; ande. purging the reactor with a purge gas, wherein steps b through ...

SYSTEM AND METHOD FOR ATOMIC LAYER DEPOSITION OF RARE-EARTH OXIDES ON OPTICAL GRADE MATERIALS FOR LASER GAIN MEDIA

A method is disclosed for doping a quantity of powder particles. A container having a central chamber is initially charged with a quantity of powder particles. A quantity of precursor is sublimed to form a heated precursor. A quantity of carrier gas is mixed with the precursor to form a mixture of heated precursor/carrier gas. The central chamber is charged with the heated precursor/carrier gas and then moved to cause interaction of the powder particles with the heated precursor/carrier gas to form a first monolayer coating on the powder particles. The heated precursor/carrier gas is then removed from the central chamber and the central chamber is charged with a O2/O3 gas under a plasma. The central chamber is then further moved to produce interaction of the O2/O3 gas with the first monolayer coating on the powder particles to modify the first monolayer coating to create a different, single monolayer coating forming an oxide coating on the powder particles. 1. A method of doping a quantity of powder particles , comprising:filling a container having a central chamber with a quantity of powder particles;heating a quantity of precursor to sublime the precursor;mixing a quantity of carrier gas with the heated precursor to form a mixture of heated precursor/carrier gas;charging the central chamber with the heated precursor/carrier gas and causing movement of the chamber to cause interaction of the powder particles with the heated precursor/carrier gas to form a first monolayer coating on each of the powder particles;removing the heated precursor/carrier gas from the central chamber and charging the central chamber with a O2/O3 gas under a plasma; andcausing further movement of the central chamber to produce interaction of the O2/O3 gas with the first monolayer coating on each powder particle to modify the first monolayer coating to create a different, single monolayer coating forming an oxide coating on each of the powder particles.2. The method of claim 1 , wherein the ...

Method of Producing a Thin Metal-Organic Framework Film Using Vapor Phase Precursors

A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound pre-cursor and at least one organic ligand, wherein each of said organometallic compound precursor and said at least one organic ligand is provided only in vapour phase. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. A substrate structure comprising:a substrate having a main surface; anda metal organic framework (MOF) film on said main surface, wherein said MOF film has a thickness range of 1 nm to 250 nm and is pin-hole free.15. The substrate structure according to claim 14 , wherein said main surface is covered with a conformal layer of a dielectric material.16. The substrate structure according to claim 14 , wherein said substrate structure further comprises a stack consisting of layers of MOF films and layers of materials having a refractive index higher than 1.4 claim 14 , wherein each layer of said MOF film is disposed alternating with each layer of said high refractive index materials.17. (canceled)18. The substrate structure according to claim 14 , wherein said substrate is a Si substrate.19. The substrate structure according to claim 14 , wherein said substrate is a bulk Si substrate.20. The substrate structure according to claim 15 , wherein the conformal layer of the dielectric material is deposited by Atomic Lay Deposition (ALD).21. The substrate structure according to claim 15 , wherein the conformal layer of dielectric material comprises an oxide layer.22. The substrate structure according to claim 21 , wherein the oxide layer is an electrical conductor.23. The substrate structure according to claim 21 , wherein the oxide layer is an electrical insulator.24. The substrate structure according to ...

THIO(DI)SILANES

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si—Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein. 1. A method of forming a silicon-containing film on a substrate , the method comprising: heating a thiodisilane according to formula (I){'br': None, 'sup': 1a', '1b', '1c', '2, 'sub': s', '2', 'n', 'x', 'h, '(RRRCS)(RN)(Si—Si)XH\u2003\u2003(I),'}wherein: subscript s is an integer from 1 to 6; subscript n is an integer from 0 to 5; subscript x is an integer from 0 to 5; subscript h is an integer from 0 to 5; with the proviso that sum s+n+x+h=6;each H, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);each X is a monovalent halogen atom F, Cl, I, or Br and, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);{'sup': 1a', '1b', '1c, 'wherein R, R, and Rare defined by limitation (a), (b), or (c){'sup': 1a', '1a', '1b', '1c, 'sub': 2', '20', '1', '20, '(a) at least one Rindependently is (C-C)alkyl or phenyl and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1a', '1b', '1c, 'sub': 6', '20', '1', '20, '(b) there is at least one group RRRC that independently is a substituted or unsubstituted (C-C)aryl, and each of any remaining R, R, and Rindependently is H or (C-C)hydrocarbyl; or'}{'sup': 1a', '1b', '1c', '1', '1a', '1b', '1c', '11', '11', '1a', '1b', '1c, 'sub': 2', '3', '20', '1', '20, '(c) any two of R, R, and R(collectively Rgroups), in the same or different RRRC group, are bonded together to form a divalent group, —R—, wherein —R— is a CHor a (C-C)hydrocarbylene and each of any remaining ...

ALD OF METAL-CONTAINING FILMS USING CYCLOPENTADIENYL COMPOUNDS

Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand. 1. (canceled)2. A process for depositing a thin film on a substrate in a reactor comprising:contacting the substrate with a vapor phase first precursor comprising a first zirconium compound comprising at least one cyclopentadienyl ligand and at least one ligand comprising bidentate bonding;contacting the substrate with an inert purge gas; andcontacting the substrate with a vapor phase first reactant.3. The process of claim 2 , wherein the first reactant is a plasma reactant.4. The process of claim 2 , wherein an inert gas serves as a carrier gas for the first precursor.5. The process of claim 2 , wherein the first reactant comprises N claim 2 , C or O.6. The process of claim 2 , wherein the thin film is an elemental metal thin film.7. The process of claim 2 , wherein the thin film is a metal carbide thin film.8. The process of claim 7 , wherein the first reactant comprises a hydrocarbon.9. The process of claim 2 , wherein the thin film is a metal nitride thin film.10. The process of claim 2 , wherein the thin film is a multicomponent thin film.11. The process of claim 10 , wherein the process comprises contacting the substrate with a second precursor.12. The process of claim 11 , wherein the second precursor comprises a second metal compound having a metal that is different from the metal of the first metal precursor.13. (canceled)14. (canceled)15. ( ...

ALUMINUM PRECURSOR AND PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: 2. The process according to claim 1 , wherein R comprises no hydrogen atom in the 1-position.3. The process according to claim 2 , wherein R is tert-butyl.4. The process according to claim 1 , wherein Z is ethylene.5. The process according to claim 1 , wherein the compound of general formula (I) has a molecular weight of not more than 600 g/mol.6. The process according to claim 1 , wherein the compound of general formula (I) has a vapor pressure of at least 1 mbar at a temperature of 200° C.7. The process according to claim 1 , wherein (a) and (b) are successively performed at least twice.8. The process according to claim 1 , wherein the metal-containing compound contains Ti claim 1 , Ta claim 1 , Mn claim 1 , Mo claim 1 , W claim 1 , or Al.9. The process according to claim 1 , wherein the metal-containing compound is a metal halide.10. The process according to claim 1 , wherein a temperature does not exceed 350° C.12. The compound according to claim 11 , wherein R comprises no hydrogen atom in the 1-position.13. The compound according to claim 12 , wherein R is tert-butyl.14. The compound according to claim 11 , wherein Z is ethylene. The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes.With the ongoing miniaturization, e.g. in the semiconductor industry, the need for thin inorganic films on substrates increases while the requirements on the quality of such films become stricter. Thin metal films serve different purposes such as barrier layers, conducting features, or capping layers. Several methods for the generation of metal films are known. One of them is the deposition of film forming compounds from the gaseous state on a ...

SiC PRECURSOR COMPOUND AND THIN FILM FORMING METHOD USING THE SAME

Provided is a SiC precursor for performing SiOCN thin film deposition and a method of forming SiOCN thin film, the method of forming thin film containing a silicon according to the subject matter is performed on a low temperature process that does not require a catalyst, and film deposition rate and process efficiency are excellent according to the subject matter. 2. The SiC precursor compound of claim 1 , wherein Rand Rare each independently n-propyl claim 1 , iso-propyl claim 1 , n-butyl claim 1 , or iso-butyl claim 1 , and Rand Rare each independently hydrogen claim 1 , methyl or ethyl.3. The SiC precursor compound of claim 2 , wherein Rand Rare iso-propyl claim 2 , one of Rand Rmay be hydrogen and the other may be methyl claim 2 , and n is an integer of 1.5. A method of forming a SiOCN thin film comprising a deposition step vaporizing one or more of the SiC precursor according to on a silicon substrate claim 1 , or a metal claim 1 , ceramic or plastic structure.6. The method of forming a SiOCN thin film of claim 5 , wherein chemical vapor deposition (CVD) or atomic layer deposition (ALD) is used in the deposition step.7. The method of forming a SiOCN thin film of claim 6 , wherein the deposition step is performed at 400-550° C.8. The method of forming a SiOCN thin film of claim 7 , wherein the atomic layer deposition is used and the method comprises a) positioning the substrate in a reaction chamber; b) injecting a gaseous SiC precursor into the reaction space; c) removing excess SiC precursor using an inert gas; d) contacting the oxygen precursor with SiC species adsorbed on the substrate; e) removing excess oxygen precursor and reaction byproducts using an inert gas; f) contacting the nitrogen precursor with SiC—O species adsorbed on the substrate; and g) removing excess nitrogen precursor and reaction byproducts using an inert gas.9. A method of forming a SiOCN thin film comprising a deposition step vaporizing one or more of the SiC precursor according to on ...

MONOLAYER FILM MEDIATED PRECISION FILM DEPOSITION

A method of forming a thin film is described. The method includes treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of an organic precursor, and thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film. Then, at least a portion of the surface of the carbon-containing film is exposed to an ion flux to mix the adsorbed carbon-containing film with the material of the underlying substrate and form a mixed film. 1. A method of forming a thin film , comprising:treating at least a portion of a surface exposed on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of an organic precursor;thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film; andexposing at least a portion of the surface of the carbon-containing film to an ion flux to mix the adsorbed carbon-containing film with the material of the underlying substrate and form a mixed film.2. The method of claim 1 , wherein the substrate comprises silicon claim 1 , germanium claim 1 , or a silicon-germanium alloy.3. The method of claim 1 , wherein the adsorption-promoting agent is NHformed using an ammonia-based plasma.4. The method of claim 1 , further comprising:pre-treating the surface of the substrate with a pre-treatment charged particle flux prior to treating the surface with the adsorption-promoting agent.5. The method of claim 4 , wherein the pre-treatment charged particle flux includes an ion flux from an inert gas plasma.6. The method of claim 1 , wherein the organic precursor includes a —CH containing precursor.7. The method of claim 1 , wherein the mixed film includes an Si-C containing film.8. The method of claim 1 , further comprising:adsorbing a Si-containing precursor onto the surface of the substrate prior ...

SELECTIVE DEPOSITION OF TUNGSTEN

A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire. 1. A method of selectively forming a film comprising metal , the method comprising:providing a substrate for processing in a reaction chamber and a hot wire element for contacting at least a gas;exposing the substrate to a metal precursor; andexposing the substrate to a gas which has been exposed to a vicinity of the hot wire;wherein the substrate comprises at least two different materials and the metal film is selectively formed in one of the surfaces.2. The method of claim 1 , wherein the metal precursor comprises transition metal element.3. The method of claim 1 , wherein the metal precursor comprises a tungsten-containing precursor or a molybdenum-containing precursor.4. The method of claim 1 , wherein the gas comprises hydrogen.5. The method of claim 1 , wherein the selectively formed film comprises metallic material.6. The method of claim 1 , wherein an excited claim 1 , radical or atomic species is formed from the gas when the gas has been exposed to a vicinity of the hot wire.7. The method of claim 1 , wherein the substrate comprises a first surface and a second surface.8. The method of claim 7 , wherein the first surface comprises a transition metal.9. The method of claim 7 , wherein the first surface comprises an oxidized metal claim 7 , and underneath the oxidized metal is an elemental metal or metallic conductive film.10. The method of claim 7 , wherein the second surface comprises Si—O bonds.11. The method of claim 7 , wherein the second surface comprise silicon oxide claim 7 , silicon nitride claim 7 , ...

FUNCTIONALIZED CYCLOSILAZANES AS PRECURSORS FOR HIGH GROWTH RATE SILICON-CONTAINING FILMS

Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof. 1. A method of depositing a silicon-containing film onto a substrate , the method comprising the steps of:a) providing a substrate in a reactor;{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'b) introducing into the reactor at least one silicon precursor compound of ;'}c) purging the reactor with purge gas;d) introducing an oxygen-containing or nitrogen-containing source (or combination thereof) into the reactor; ande) purging the reactor with purge gas,wherein steps b through e are repeated until a desired thickness of film is deposited, andwherein the method is conducted at one or more temperatures ranging from about 25° C. to 600° C.2. The method of claim 1 , wherein the at least one silicon precursor compound is selected from the group consisting of 2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-silyl-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-(iso-propylaminosilyl)-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-(dimethylaminosilyl)-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-(iso-propylaminosilyl)-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-(methylaminosilyl)-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1-(dimethylaminomethylsilyl)-2 claim 1 ,2 claim 1 ,4 claim 1 ,4 claim 1 ,6 claim 1 ,6-hexamethylcyclotrisilazane claim 1 , 1 ...

VAPOR DISPOSITION OF SILICON-CONTAINING FILMS USING PENTA-SUBSTITUTED DISILANES

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane. 1. A thermal vapor deposition method of depositing a silicon film on a substrate , the method comprising:a) setting a reactor containing the substrate to a temperature ranging from approximately 550° C. to approximately 800° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 13,332 Pa);b) introducing a vapor of pentachlorodisilane into the reaction chamber to form the silicon film on the substrate.2. The method of claim 1 , further comprising introducing an inert gas.3. The method of claim 2 , wherein the inert gas is N.4. The method of claim 1 , further comprising introducing a reducing gas.5. The method of claim 1 , wherein the silicon film contains between approximately 0 atomic % and 5 atomic % C; between approximately 0 atomic % and 1 atomic % N; and between approximately 0 atomic % and 1 atomic % Cl.6. The method of claim 5 , wherein the silicon film is an amorphous silicon film.7. The method of claim 5 , wherein the silicon film is a polysilicon film.8. The method of claim 3 , wherein the silicon film contains between approximately 0 atomic % and 5 atomic % C; between approximately 0 atomic % and 1 atomic % N; and between approximately 0 atomic % and 1 atomic % Cl.9. The method of claim 8 , wherein the silicon film is an amorphous silicon film.10. The method of claim 8 , wherein the silicon film is a polysilicon film. This application is a divisional of U.S. patent application Ser. No. 15/459,158, filed Mar. 15, 2017, which is a divisional of U.S. patent application Ser. No. 14/979,816, filed Dec. 28, 2015 and matured to grant as U.S. Pat. No. 9,633,838, the entire contents of which are incorporated herein by reference.Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor ...

METHOD AND SYSTEM FOR CONTINUOUS ATOMIC LAYER DEPOSITION

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites. 1. A method for atomic layer deposition , comprising the steps of , providing a housing;providing a moving bed which passes through the housing of the moving bed including a reaction surface;providing a plurality of precursor gases and input; andcontrolling amounts of the precursor gas released into the housing, the amounts of the precursor gas being less then available reaction sites of the reaction surface, thereby leading to exhaustion of the precursor gases released.2. The method as defined in wherein the housing consists of a single volume with no removal ports and no purge components associated with the housing.3. The method as defined in wherein the housing further includes an associated plurality of precursor gas input ports positioned to enable the plurality of precursor gases to react with the available reaction sites claim 1 , thereby exhausting the precursor gases input to the housing.4. The method as defined in wherein the moving bed is constructed to be of a prescribed length passing through the housing to insure complete exhaustion of the precursor gases input to the housing and which react with the available reaction sites.5. The method as defined in further including the step of providing a carrier gas.6. The method as defined in wherein at least one of flow velocity of the carrier gas and velocity of the moving bed is controlled to insure exhaustion of the precursor gases.7. The method as defined in further including a device coupled to the moving bed for mixing particles comprising the reaction surface.8. The method as defined in wherein relative ...

System And Method For Atomic Layer Deposition Of Solid Electrolytes

A method of making an ionically conductive layer for an electrochemical device is disclosed. The method includes the steps of: (a) exposing a substrate to a lithium-containing precursor followed by an oxygen-containing precursor; and (b) exposing the substrate to a boron-containing precursor followed by the oxygen-containing precursor.

INTEGRATED ELECTROHYDRODYNAMIC JET PRINTING AND SPATIAL ATOMIC LAYER DEPOSITION SYSTEM FOR AREA SELECTIVE-ATOMIC LAYER DEPOSITION

An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed. 1. An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication , the system comprising:an electrohydrodynamic jet printing station that includes an E-jet printing nozzle;a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases;a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions; anda conveyor on which the motion actuator is supported, the conveyor being operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively.2. The integrated electrohydrodynamic jet printing and spatial atomic layer deposition system set forth in ...

Method for forming coating layer and coating material having waterproof property

The present disclosure relates to a method for forming a coating layer and a coating material having waterproof property, and the method for forming a coating layer according to the present disclosure includes (a) supplying a precursor comprising a rare earth metal onto a substrate; (b) purging impurities of remaining precursor after combination of the rare earth metal onto the substrate; (c) supplying an oxidant onto the substrate; and (d) purging remaining impurities after forming a coating layer including a rare earth oxide on the substrate. According to the method for forming a coating layer of the present disclosure, a coating layer with hydrophobic or superhydrophobic property may be formed by controlling a temperature of the substrate so that an atomic ratio of a carbon element in the coating layer is less than 1% to form the coating layer with hydrophobic or superhydrophobic property.

DEPOSITION SYSTEM AND METHOD USING A DELIVERY HEAD SEPARATED FROM A SUBSTRATE BY GAS PRESSURE

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed. 1. A process for depositing a thin film material on a substrate , comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate , and wherein the series of gas flows comprises at least a first reactive gaseous material , an inert purge gas , and a second reactive gaseous material , wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material , wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head.21. The process of wherein the gas flows are provided from a series of open elongated output channels claim 1 , substantially in parallel claim 1 , wherein the output face of the delivery head is spaced within mm of the surface of the substrate subject to deposition.3. The process of wherein the substrate is treated by a plurality of delivery heads spaced apart.4. The process of wherein a given area of the substrate is exposed to the gas flow of the first reactive gaseous material for less than about 500 milliseconds at a time ...

Bis(alkylimido)-bis(alkylamido)tungsten molecules for deposition of tungsten-containing films

Bis(alkylimido)-bis(alkylamido)tungsten compounds, their synthesis, and their use for the deposition of tungsten-containing films are disclosed.

HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION

Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate. 1. A method comprising:heating a substrate to a temperature in the range of about 60° C. to about 150° C.;exposing at least a portion of a surface of the substrate to a gaseous organometallic metal precursor to form a film of the organometallic metal precursor on the surface of the substrate, wherein the organometallic metal precursor is a metal aminoalkoxide complex, a metal dialkoxide complex or metal diketonate complex; andexposing a gaseous organometallic metal reactant to the film of the organometallic metal precursor to form a metal layer on the substrate.2. The method of claim 1 , wherein the film is a monolayer or sub-monolayer of the organometallic metal precursor claim 1 , and the metal layer is a monolayer or sub-monolayer.3. The method of claim 2 , which further comprises repeating exposure of the substrate and previously deposited metal layer to the gaseous organometallic metal precursor and gaseous organometallic metal reactant to deposit additional monolayers or sub-monolayers of the metal.4. The method of claim 1 , wherein the metal aminoalkoxide complex claim 1 , metal dialkoxide complex claim 1 , and metal diketonate complex claim 1 , is a liquid at temperatures greater than about 50° C. claim 1 , and wherein each organic ligand bonds to the metal through either an oxygen and a nitrogen coordinate bond or two oxygen coordinate bonds.5. The method of claim 4 , wherein the metal aminoalkoxide complexes claim 4 , metal dialkoxide complexes claim 4 , and metal diketonate complexes do not contain any halides claim 4 , and are a liquid at standard ambient temperature and pressure.6. The method of claim 5 , wherein the metal is Cu claim 5 , and the organometallic metal precursor is selected from the group ...

Silicon-carbon composite material and preparation method thereof

A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 μm. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.

METHODS FOR FORMING IMPURITY FREE METAL ALLOY FILMS

Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQR, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): 2. (canceled)3. (canceled)4. The method of claim 1 , wherein Q is Cl or Br.5. The method of claim 1 , wherein Q is Cl.6. The method of claim 1 , wherein at least one of R claim 1 , R claim 1 , R claim 1 , R claim 1 , R claim 1 , and Rcomprises methyl.7. The method of claim 1 , wherein exposing the substrate surface to the first halide precursor and the organosilane reactant occurs sequentially.8. The method of claim 1 , wherein exposing the substrate surface to the first halide precursor and the organosilane reactant occurs simultaneously.9. The method of claim 1 , wherein the organosilane reactant is selected from one or more bis(trimethylsilyl)cyclohexadiene claim 1 , bis(trimethylsilyl)diaza-cyclohexadiene claim 1 , bis(trimethylsilyl)-aza-cyclohexadiene claim 1 , bis(trimethylsilyl)-dihydro-bipyridine claim 1 , 3 claim 1 ,6-bis(trimethylsilyl)-1 claim 1 ,4-cyclohexadiene claim 1 , 1-methyl-3 claim 1 ,6-bis(trimethylsilyl)-1 claim 1 ,4-cyclohexadiene claim 1 , and 1 claim 1 ,4-bis-(trimethylsilyl)-1 claim 1 ,4-diaza-2 claim 1 ,5-cyclohexadiene.10. (canceled)11. (canceled)12. The method of claim 1 , wherein the substrate is in a processing chamber.13. The method of claim 12 , further comprising purging the processing chamber of each of the first halide precursor and the second halide precursor prior to exposing the substrate to the organosilane reactant.14. The method of claim 13 , further comprising purging the processing chamber of the organosilane reactant.15. (canceled)16. A gate stack comprising:a high-κ ...

Compositions and Methods Using Same for Carbon Doped Silicon Containing Films

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

HALIDOSILANE COMPOUNDS AND COMPOSITIONS AND PROCESSES FOR DEPOSITING SILICON-CONTAINING FILMS USING SAME

Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less. 1. A method for forming a silicon nitride or silicon carbonitride film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process , the method comprising:providing the at least one surface of the substrate in a reactor;introducing at least one halidosilane precursor from the group consisting of monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS), andintroducing a nitrogen-containing source into the reactor wherein the at least one silicon containing precursor and the nitrogen-containing source react to form the silicon nitride on the at least one surface.2. The method of wherein the nitrogen-containing source is selected from the group consisting of ammonia claim 1 , hydrazine claim 1 , monoalkylhydrazine claim 1 , dialkylhydrazine claim 1 , organoamine claim 1 , organodiamine claim 1 ...

Plasma processing method and plasma processing apparatus

A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

ZIRCONIUM, HAFNIUM, TITANIUM PRECURSORS AND DEPOSITION OF GROUP 4 CONTAINING FILMS USING THE SAME

Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the formula: 2. The Group 4 transition metal-containing film forming composition of claim 1 , wherein the −1 anionic ligand is selected from the group consisting of NR′ claim 1 , OR′ claim 1 , Cp claim 1 , Amidinate claim 1 , β-diketonate claim 1 , and keto-iminate claim 1 , wherein R′ is a H or a C-Chydrocarbon group.3. The Group 4 transition metal-containing film forming composition of claim 2 , wherein the Group 4 transitional metal-containing precursor is selected from E is C.4. The Group 4 transition metal-containing film forming composition of claim 3 , wherein M is Zr.5. The Group 4 transition metal-containing film forming composition of claim 4 , wherein the Group 4 transitional metal precursor is selected from the group consisting of (MeN)—Zr—CH-1-(CH—CH—NMe)-3-(CH—CH—NMe)- claim 4 , (MeN)-Zr—CH-1-Me-2-(CH—CH—NMe)-4-(CH—CH—NMe)- claim 4 , (Cp)-Zr-CH-1-(CH—CH-NMe)-3-(CH—CH—NMe)- claim 4 , and (Cp)-Zr—CH-1-Me-2-(CH—CH—NMe)-4-(CH—CH-NMe)-.6. The Group 4 transition metal-containing film forming composition of claim 3 , wherein M is Hf.7. The Group 4 transition metal-containing film forming composition of claim 6 , wherein the Group 4 transitional metal precursor is selected from the group consisting of (MeN)—Hf—CH-1-(CH—CH—NMe)-3-(CH—CH—NMe)- claim 6 , (MeN)—Hf—CH-1-Me-2-(CH—CH—NMe)-4-(CH—CH—NMe)- claim 6 , (Cp)-Hf—CH-1-(CH—CH—NMe)-3-(CH—CH—NMe)- and (Cp)-Hf—CH-1-Me-2-(CH—CH—NMe)-4-(CH—CH—NMe)-.8. The Group 4 transition metal-containing film forming composition of claim 3 , wherein M is Ti. This application is divisional of U.S. patent application Ser. No. 15/396,183, filed Dec. 30, 2016, the entire contents of which are incorporated herein by reference.Disclosed are Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal precursors having the following chemical formula L-M-CR-1-[(ER)-(ER)-L′]-2-[(ER)-(ER ...

Cyclic germanium silylamido precursors for ge-containing film depositions and methods of using the same

Methods for forming a Ge-containing film on a substrate comprise the steps of introducing a vapor of a cyclic Ge(II) silylamido precursor into a reactor having the substrate disposed therein and depositing at least part of the cyclic Ge(II) silylamido precursor onto the substrate to form the Ge-containing film using a vapor deposition method. The cyclic Ge(II) silylamido precursor is [SiMe 3 -(N—)—SiMe 2 -(N—)—SiMe 3 ]Ge(II) or [tBu-(N—)—SiMe 2 -(N—)-tBu]Ge(II).

METHODS FOR COATING A SUBSTRATE WITH MAGNESIUM FLUORIDE VIA ATOMIC LAYER DEPOSITION

Atomic layer deposition methods for coating an optical substrate with magnesium fluoride. The methods include two primary processes. The first process includes the formation of a magnesium oxide layer over a surface of a substrate. The second process includes converting the magnesium oxide layer to a magnesium fluoride layer. These two primary processes may be repeated a plurality of times to create multiple magnesium fluoride layers that make up a magnesium fluoride film. The magnesium fluoride film may serve as an antireflective coating layer for an optical substrate, such as an optical lens. 1. An atomic layer deposition method for coating an optical lens with a magnesium fluoride layer , the method comprising:(i) exposing an optical lens to a precursor gas comprising magnesium, thereby forming a magnesium-containing precursor layer over a surface of the lens;(ii) exposing the magnesium-containing precursor layer to a first oxygen-containing gas, thereby forming a magnesium oxide layer;(iii) exposing the magnesium oxide layer to a source gas comprising fluorine, thereby forming an intermediate layer comprising magnesium and fluoride; and(iv) exposing the intermediate layer to a second oxygen-containing gas, thereby forming a magnesium fluoride layer.2. The method of claim 1 , wherein exposing the magnesium-containing precursor layer to the first oxygen-containing gas is performed at a temperature in a range of 100 degrees C. to 300 degrees C.3. The method of claim 1 , wherein exposing the magnesium-containing precursor layer to the first oxygen-containing gas is performed at a temperature in a range of 240 degrees C. to 260 degrees C.4. The method of claim 1 , wherein the first oxygen-containing gas comprises a gas selected from the group consisting of: water claim 1 , ozone claim 1 , hydrogen peroxide claim 1 , menthol claim 1 , ethanol claim 1 , plasma with oxygen claim 1 , and plasma with oxygen-containing chemicals.5. The method of claim 1 , wherein the first ...

CORROSION RESISTANT FILM ON A CHAMBER COMPONENT AND METHODS OF DEPOSITING THEREOF

Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process. 1. A method for depositing a corrosion resistant film on a metal surface of a chamber component , the method comprising:performing x reduction cycles to reduce a base metal oxide on the metal surface of the chamber component; andthereafter, performing y atomic layer deposition (ALD) cycles to form the corrosion resistant film onto the reduced metal surface,wherein x and y are independent integers.2. The method of claim 1 , wherein an ALD cycle from the y ALD cycles comprises:forming an adsorption layer of a metal containing species onto the metal surface of the process chamber component by injecting a metal-containing precursor into a deposition chamber containing the chamber component; andreacting an alcohol reactant with the adsorption layer to form a metal oxide layer by injecting the alcohol reactant into the deposition chamber.3. The method of claim 2 , wherein the metal-containing precursor comprises at least one of triethylaluminum claim 2 , diethylaluminum ethoxide claim 2 , tris(ethylmethylamido)aluminum claim 2 , aluminum sec-butoxide claim 2 , aluminum tribromide claim 2 , aluminum trichloride claim 2 , triethylaluminum claim 2 , triisobutylaluminum claim 2 , trimethylaluminum claim 2 , or tris(diethylamido)aluminum claim 2 , tris(N claim 2 ,N-bis(trimethylsilyl)amide)yttrium (III) claim 2 , yttrium (III)butoxide claim 2 , tris(cyclopentadienyl)yttrium(III) claim 2 , Y(thd)3 (thd=2 claim 2 ,2 claim 2 ,6 claim 2 ,6-tetramethyl-3 claim 2 ,5-heptanedionato) claim 2 , zirconium (IV) bromide claim ...

MULTILAYER ENCAPSULATION STACKS BY ATOMIC LAYER DEPOSITION

Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer. 2. The method of claim 1 , wherein the surface of the feature comprises materials that are easily damaged by plasma claim 1 , chemical exposure or heat.3. The method of claim 2 , wherein the surface of the feature comprises chalcogen materials.4. The method of claim 1 , wherein the protective layer substantially adheres to the surface of the feature.5. The method of claim 1 , wherein the surface of the feature comprises a carbon material surface and the protective layer substantially adheres to the carbon material surface.6. The method of claim 1 , wherein aspect ratio is greater than or equal to about 5:1.7. The method of claim 1 , wherein the protective layer comprises a dielectric comprising one or more of silicon nitride claim 1 , amorphous silicon claim 1 , aluminum nitride or aluminum oxide.8. The method of claim 1 , wherein forming the protective layer comprises exposing the substrate to a first plasma with a power less than or equal to about 200 W.9. The method of claim 8 , wherein the surface of the substrate is nitridated less than or equal to about 10 Å.10. The method of claim 1 , wherein the substrate is maintained at a pressure greater than or equal to about 5 Torr during formation of the protective layer.11. The method of claim 1 , wherein the protective layer is formed at a rate of greater than or equal to about 1 Å/min.12. The method of claim 1 , wherein the second plasma has a power greater than or equal to about 50 W.13. The method of claim 1 , wherein the substrate is maintained at a ...

METHODS FOR DEPOSITING A TITANIUM ALUMINUM CARBIDE FILM STRUCTURE ON A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES

Methods for depositing a titanium aluminum carbide (TiAlC) film structure on a substrate are disclosed. The methods may include: depositing a first TiAlC film on a substrate utilizing a first cyclical deposition process, and depositing a second TiAlC film over the first TiAlC film utilizing a second cyclical deposition process. Semiconductor structures including titanium aluminum carbide (TiAlC) film structures deposited by the methods of the disclosure are also disclosed. 1. A method for depositing a titanium aluminum carbide (TiAlC) film structure on a substrate , the method comprising:depositing a first TiAlC film on the substrate utilizing at least one first unit deposition cycle of a first cyclical deposition process at a first growth rate per cycle; anddepositing a second TiAlC film over the first TiAlC film utilizing at least one second unit deposition cycle of a second cyclical deposition process at a second growth rate per cycle;wherein the first growth rate per cycle is greater than the second growth rate per cycle.2. The method of claim 1 , wherein the first unit deposition cycle and the second unit deposition cycle comprise: contacting the substrate with a titanium precursor claim 1 , and contacting the substrate with a metalorganic aluminum precursor.3. The method of claim 2 , wherein the first cyclical deposition process utilizes a first metalorganic aluminum precursor as the metalorganic aluminum precursor and the second cyclical deposition process utilizes a second metalorganic aluminum precursor different from the first metalorganic aluminum precursor as the metalorganic aluminum precursor.4. The method of claim 3 , wherein the first metalorganic aluminum precursor is more reactive than the second metalorganic aluminum precursor.5. The method of claim 3 , wherein the first metalorganic aluminum precursor contains a greater number of carbon atoms than the second metalorganic aluminum precursor.6. The method of claim 3 , wherein the first metalorganic ...

LITHIUM MICROBATTERY PROTECTED BY A COVER

A lithium microbattery comprises a stack of active layers containing lithium and a protective cover covering the stack of active layers. The protective cover is fixed to the stack of active layers by means of a layer of glue. 1. A lithium microbattery comprising a stack of active layers containing lithium and a protective cover covering the stack of active layers , wherein the protective cover is fixed to the stack of active layers by a layer of glue and wherein the lithium microbattery comprises a buffer structure comprising at least one alumina layer arranged between the stack of active layers and the layer of glue , the buffer structure being in contact with said stack of active layers.2. The microbattery according to claim 1 , wherein the alumina layer of the buffer structure is in contact with the layer of glue.3. The microbattery according to claim 1 , wherein at least the alumina layer of the buffer structure completely covers the stack of active layers.4. The microbattery according to claim 1 , wherein the stack of active layers comprises a metallic lithium electrode in contact with the buffer structure.5. The microbattery according to claim 1 , wherein the alumina layer has a thickness comprised between 5 nm and 50 nm.6. A fabrication method of a lithium microbattery claim 1 , comprising the following steps:providing a stack of active layers containing lithium;depositing a buffer structure comprising at least one alumina layer on the stack of active layers;covering the stack of active layers and the buffer structure by a protective cover, a layer of polymerizable material being disposed between the buffer structure and the protective cover; andcross-linking the polymerizable material to stick the protective cover to the stack of active layers via the buffer structure.7. The method according to claim 6 , wherein the layer of polymerizable material is deposited either on the buffer structure prior to fitting of the protective cover or on the protective cover ...

LAMINATE AND METHOD FOR FABRICATING THE SAME

A laminate includes a substrate made of an organic polymer having a functional group containing an oxygen atom or a nitrogen atom, a functional layer bonded to the functional group of the organic polymer contained in the substrate and formed by an atomic layer deposition process, and an overcoat layer provided to cover the functional layer and containing transition metal atoms. Because the adhesion between the substrate and the functional layer is improved and the functional layer is protected by the overcoat layer, it is possible to achieve both improved gas barrier properties and/or improved durability against an environmental stress such as heat, humidity and the like. 1. A laminate comprising:a substrate that contains an organic polymer having a functional group containing an oxygen atom or a nitrogen atom;a functional layer formed on at least a part of a surface of the substrate and made of an atomic layer deposition film bonded to the functional group present on the surface of the substrate; andan overcoat layer formed on the functional layer and made of an inorganic film containing an element or elements selected from the group consisting of an element of Group III, an element of Group IV, an element of Group V, and a lanthanoid element.2. The laminate of claim 1 , characterized in that the overcoat layer is made of an inorganic film containing tantalum atoms.3. The laminate of claim 1 , wherein the inorganic film of the overcoat layer is formed by any one of a sputtering process claim 1 , a CVD process and a vacuum deposition process.4. The laminate of claim 1 , wherein the overcoat layer has a thickness of not less than 5 nm to not larger than 1000 nm.5. The laminate of claim 1 , wherein the functional layer has a thickness of not less than 2 nm.6. The laminate of claim 1 , wherein the water vapor transmission rate is not larger than 0.01 g/m/day.7. A method for fabricating a laminate wherein a functional layer and an overcoat layer are stacked in this ...

BIS(ALKYLIMIDO)-BIS(ALKYLAMIDO)MOLYBDENUM MOLECULES FOR DEPOSITION OF MOLYBDENUM-CONTAINING FILMS

Bis(alkylimido)-bis(alkylamido)molybdenum compounds, their synthesis, and their use for the deposition of molybdenum-containing films are disclosed. 1. An atomic layer deposition method for forming a molybdenum-containing film on a substrate , the method comprising:{'sub': 2', '2, 'introducing a molybdenum-containing precursor into a vapor deposition chamber containing a substrate, the molybdenum-containing precursor having the formula Mo(NR)(NHR′), wherein R and R′ are independently chosen from the group consisting of a C1-C4 alkyl group, a C1-C4 perfluoroalkyl group, and an alkylsilyl group; and'}depositing at least part of the molybdenum-containing precursor on the substrate by atomic layer deposition to form the molybdenum-containing film.2. The atomic layer deposition method of claim 1 , wherein the molybdenum-containing precursor is selected from the group consisting of Mo(NMe)(NHMe) claim 1 , Mo(NMe)(NHEt) claim 1 , Mo(NMe)(NHPr) claim 1 , Mo(NMe)(NHiPr) claim 1 , Mo(NMe)(NHBu) claim 1 , Mo(NMe)(NHiBu) claim 1 , Mo(NMe)(NHsBu) claim 1 , Mo(NMe)(NHtBu) claim 1 , Mo(NEt)(NHMe) claim 1 , Mo(NEt)(NHEt) claim 1 , Mo(NEt)(NHPr) claim 1 , Mo(NEt)(NHiPr) claim 1 , Mo(NEt)(NHBu) claim 1 , Mo(NEt)(NHiBu) claim 1 , Mo(NEt)(NHsBu) claim 1 , Mo(NEt)(NHtBu) claim 1 , Mo(NPr)(NHMe) claim 1 , Mo(NPr)(NHEt) claim 1 , Mo(NPr)(NHPr) claim 1 , Mo(NPr)(NHiPr) claim 1 , Mo(NPr)(NHBu) claim 1 , Mo(NPr)(NHiBu) claim 1 , Mo(NPr)(NHsBu) claim 1 ,Mo(NPr)(NHtBu) claim 1 , Mo(NiPr)(NHMe) claim 1 , Mo(NiPr)(NHEt) claim 1 , Mo(NiPr)(NHPr) claim 1 , Mo(NiPr)(NHiPr) claim 1 , Mo(NiPr)(NHBu) claim 1 , Mo(NiPr)(NHiBu) claim 1 , Mo(NiPr)(NHsBu) claim 1 , Mo(NiPr)(NHtBu) claim 1 , Mo(NBu)(NHMe) claim 1 , Mo(NBu)(NHEt) claim 1 , Mo(NBu)(NHPr) claim 1 , Mo(NBu)(NHiPr) claim 1 , Mo(NBu)(NHBu) claim 1 , Mo(NBu)(NHiBu) claim 1 , Mo(NBu)(NHsBu) claim 1 , Mo(NBu)(NHtBu) claim 1 , Mo(NiBu)(NHMe) claim 1 , Mo(NiBu)(NHEt) claim 1 , Mo(NiBu)(NHPr) claim 1 , Mo(NiBu)(NHiPr) claim 1 , Mo(NiBu)(NHBu) claim 1 ...

DIAZADIENYL COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR PRODUCING THIN FILM, AND DIAZADIENE COMPOUND

A diazadienyl compound represented by General Formula (I) below: 2. The diazadienyl compound according to claim 1 , wherein Rand Rin General Formula (I) are the different groups.3. The diazadienyl compound according to claim 1 , Rin General Formula (I) is hydrogen.4. The diazadienyl compound according to claim 1 , wherein M in General Formula (I) is copper claim 1 , iron claim 1 , nickel claim 1 , cobalt or manganese.5. A raw material for forming a thin film claim 1 , comprising the diazadienyl compound according to .6. A method for manufacturing a thin film claim 5 , comprising: introducing a vapor including a diazadienyl compound obtained by vaporizing the raw material for forming a thin film according to into a film formation chamber in which a substrate is disposed; and forming claim 5 , on a surface of the substrate claim 5 , a thin film including at least one atom selected from a metal atom and a silicon atom by inducing decomposition and/or chemical reaction of the diazadienyl compound.8. The diazadienyl compound according to claim 2 , wherein M in General Formula (I) is copper claim 2 , iron claim 2 , nickel claim 2 , cobalt or manganese.9. The diazadienyl compound according to claim 3 , wherein M in General Formula (I) is copper claim 3 , iron claim 3 , nickel claim 3 , cobalt or manganese.10. A raw material for forming a thin film claim 2 , comprising the diazadienyl compound according to .11. A raw material for forming a thin film claim 3 , comprising the diazadienyl compound according to .12. A raw material for forming a thin film claim 4 , comprising the diazadienyl compound according to .13. A raw material for forming a thin film claim 8 , comprising the diazadienyl compound according to .14. A raw material for forming a thin film claim 9 , comprising the diazadienyl compound according to .15. A method for manufacturing a thin film claim 10 , comprising: introducing a vapor including a diazadienyl compound obtained by vaporizing the raw material for ...

METHOD OF FORMING TITANIUM NITRIDE FILMS WITH (200) CRYSTALLOGRAPHIC TEXTURE

A substrate processing method is described for forming a titanium nitride material that may be used for superconducting metallization or work function adjustment applications. The substrate processing method includes depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate, and treating the first titanium nitride film with plasma excited hydrogen-containing gas, where the first titanium nitride film is polycrystalline and the treating increases the (200) crystallographic texture of the first titanium nitride film. The method further includes depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.

Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices

A method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices is described. The hafnium zirconium based films can be either doped or undoped. The method includes depositing a hafnium zirconium based film with a thickness greater than 5 nanometers on a substrate, depositing a cap layer on the hafnium zirconium based film, heat-treating the substrate to crystallize the hafnium zirconium based film in a non-centrosymmetric orthorhombic phase, a tetragonal phase, or a mixture thereof. The method further includes removing the cap layer from the substrate, thinning the heat-treated hafnium zirconium based film to a thickness of less than 5 nanometers, where the thinned heat-treated hafnium zirconium based film maintains the crystallized non-centrosymmetric orthorhombic phase, the tetragonal phase, or the mixture thereof.

CERAMIC PEDESTAL HAVING ATOMIC PROTECTIVE LAYER

A method of manufacturing a support pedestal for use in semiconductor processing includes applying a protective layer on a conductive member of the support pedestal with an atomic layer deposition (ALD) process. The support pedestal has a support plate bonded to a tubular shaft. The support plate has a substrate, an electric element embedded in the substrate, and a conductive member connected to the electric element, and the tubular shaft defines an internal chamber. The ALD process introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member, and introducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer. 1. A method of manufacturing a support pedestal for use in semiconductor processing , the support pedestal comprising a support plate bonded to a tubular shaft , the support plate comprising a substrate , an electric element embedded in the substrate , and a conductive member connected to the electric element , and the tubular shaft defining an internal chamber , the method comprising:applying a protective layer on the conductive member by an atomic layer deposition (ALD) process.2. The method according to claim 1 , wherein the ALD process comprises:introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member; andintroducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer.3. The method according to claim 2 , wherein the ALD process further comprises introducing a purge gas into the chamber of the tubular shaft before the second precursors are introduced into the chamber.4. The method according to further comprising heating the chamber of the tubular shaft during the ALD process.5. The method according to further comprising connecting a plasma chamber to the tubular shaft for heating the chamber of the tubular shaft.6. The method ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). 1. A method of manufacturing a semiconductor device , comprising: [ (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and', '(a-2) supplying a first reactant gas to the substrate; and, '(a) forming the first film on the substrate by performing a first cycle a first predetermined number of times, the first cycle including, (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and', '(b-2) supplying a second reactant gas to the substrate,, '(b) forming the second film on the first film by performing a second cycle a second predetermined number of times, the second cycle including, 'wherein at least one of the first reactant gas or the second reactant gas includes a gas containing the metal element and an amino group or an inorganic hydrogen-containing gas., 'forming a film composed of a first film containing a metal element and a second film containing the metal element on a substrate, the first film and the second film being laminated, by performing2. The method according ...

ORGANOMETALLIC COMPOUNDS

The invention relates to a two-stage synthesis for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds according to the general formula [W(NtBu)(NRR)] (I), starting from [W(NtBu)(NHtBu)]. The invention also relates to compounds according to the general formula [W(NtBu)(NRR)] (I), obtainable according to the claimed method, compounds according to general formula [W(NtBu)(NRR)] (I), with the exception of [W(NtBu)(NMe)] and [W(NtBu)(NEtMe)], the use of a compound [W(NtBu)(NRR)] (I), and a substrate which, on a surface, has a tungsten layer or a tungsten-containing layer. Defined bis(tertbutylimido)bis(dialkylamido)tungsten compounds of the type [W(NtBu)(NRR)] (I) can be produced easily, economically and reproducibly in high purity and good yields by means of the described method. On account of their high purity, the compounds are suitable for producing high-quality substrates which have tungsten layers or tungsten-containing layers. 1. Method for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds {'br': None, 'i': 't', 'sub': 2', '2, 'sup': A', 'B, '[W(NBu)(NRR)]\u2003\u2003(I),'}, 'according to the general formula'}wherein{'sup': A', 'B, 'Rand Rare independently selected from the group consisting of linear and branched alkyl radicals having 1 to 20 carbon atoms,'}comprising the following steps:{'sub': 2', '2, 'a) provision of [W(NtBu)(NHtBu)]'}and{'sub': 2', '2', 'U, 'sup': A', 'B, 'b) reaction of [W(NtBu)(NHtBu)] from step a) with an amine according to the general formula HNRRin a solvent M,'} {'sup': A', 'B, 'Rand Rare independently selected from the group consisting of linear and branched alkyl radicals having 1 to 20 carbon atoms,'}, 'wherein'} {'sub': 2', '2, 'sup': A', 'B, 'a molar ratio [W(NtBu)(NHtBu)]:HNRRis <1:2.'}, 'and'}2. Method according to claim 1 , wherein the provision of [W(NtBu)(NHtBu)] comprises a reaction of WClwith tBuNHin the presence of an auxiliary base in an aprotic solvent M claim 1 ,{'sub': 6', '2, ...

LOW-TEMPERATURE ATOMIC LAYER DEPOSITION OF BORON NITRIDE AND BN STRUCTURES

Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal NH, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide saturating atomic layer deposition (ALD) of a boron nitride (BN) layer on various semiconductors and metallic substrates. 1. A method for atomic layer deposition (ALD) of boron nitride , the method comprising:placing a substrate in an ALD reactor;heating the substrate to a deposition temperature; andsequential exposing the substrate to a reactive nitrogen containing precursor and a boron containing precursor.2. The method of claim 1 , wherein the reactive nitrogen containing precursor comprises such as hydrazine (NH).3. The method of claim 2 , wherein the boron containing precursor comprises one of BCl claim 2 , BBr claim 2 , BF claim 2 , BH claim 2 , borazine (BH)(NH) claim 2 , tris(dimethylamino)borane (TDMAB) and organometallic boron compounds.4. The method of claim 1 , wherein the boron containing precursor comprises one of BCl claim 1 , BBr claim 1 , BF claim 1 , BH claim 1 , borazine (BH)(NH) claim 1 , tris(dimethylamino)borane (TDMAB) and organometallic boron compounds.5. The method of claim 1 , wherein the substrate comprise one of silicon claim 1 , silicon germanium (SiGe) claim 1 , indium gallium arsenide (InGaAs) claim 1 , indium gallium antiminide (InGaSb) claim 1 , or indium gallium nitride (InGaN) claim 1 , a 2-dimensional semiconductor substrate claim 1 , or a metallic substrates.6. The method of claim 5 , wherein the 2-dimensional semiconductor substrate comprises such highly ordered pyrolytic graphite (HOPG) or molybdenum disulfide (MoS)7. The method of claim 5 , wherein the metallic substrate comprises copper.8. The method of claim 1 , wherein the substrate comprises a metal interconnect.9. The method of claim 1 , wherein the substrate ...

MANUFACTURING METHOD FOR GRAPHENE FILM, POROUS SILICA POWDER AND TRANSPARENT CONDUCTIVE LAYER

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template. 1. A manufacturing method for a graphene film , comprising steps of:providing a porous material powder;putting the porous material powder into an atomic layer deposition device;depositing a metal catalyst layer in pores of the porous material powder to form a porous material powder having the metal catalyst layer in the pores;depositing the porous material powder in an organic alcohol solution and pressing to form a silica template, andintroducing a carbon source precursor on the silica template, letting grow for a preset time to form a graphene film.2. The manufacturing method for a graphene film according to claim 1 , wherein in the step of providing a porous material powder:the porous material powder is a hierarchical porous silica powder.3. The manufacturing method for a graphene film according to claim 1 , wherein in the step of depositing a metal catalyst layer in pores of the porous material powder to form a porous material powder having the metal catalyst layer in the pores:the metal catalyst layer comprises a copper catalyst layer or a nickel catalyst layer.4. The manufacturing method for a graphene film according to claim 3 , wherein the thickness of the copper catalyst layer or the nickel catalyst layer is 10-30 nm.5. The manufacturing method for a graphene film according to claim 3 , wherein the step of depositing a metal catalyst layer in pores of the porous material powder to form a porous material powder having the metal catalyst layer in the pores comprises:continuously introducing a copper precursor or a ...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate. 1. A method of manufacturing a semiconductor device , the method comprising forming a film containing silicon , carbon and a predetermined element on a substrate by performing a cycle a first predetermined number of times , the predetermined element being one of nitrogen and oxygen , the cycle comprising:supplying a first precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate; andsupplying a modifying gas containing the predetermined element to the substrate.2. The method of claim 1 , wherein supplying the modifying gas includes supplying a first modifying gas containing one of nitrogen and oxygen to the substrate claim 1 ,wherein the cycle further comprises supplying a second modifying gas containing one of nitrogen and oxygen that is not contained in the first modifying gas to the substrate, andwherein the film contains silicon, carbon, nitrogen and oxygen.3. The method of claim 2 , wherein claim 2 , in the act of forming the film claim 2 , the cycle comprising: supplying the first precursor gas; supplying the first modifying gas; and supplying the second modifying gas is performed the first predetermined number of times.4. The method of claim 2 , wherein the cycle further comprises:performing a first set a second predetermined number of times, ...

METAL DEPOSITION METHODS

A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition. 1. A method of forming an amorphous metal layer , the method comprising:exposing a substrate surface of a substrate material to a nucleation precursor to form a conformal amorphous nucleation layer; andconverting the conformal amorphous nucleation layer to a conformal amorphous metal layer by substituting atoms of the conformal amorphous nucleation layer with metal atoms from a metal precursor.2. The method of claim 1 , wherein the substrate material consists essentially of a metal material.3. The method of claim 1 , wherein the substrate material comprises a dielectric material.4. The method of claim 3 , wherein the substrate material comprises aluminum oxide or titanium nitride.5. The method of claim 1 , wherein the nucleation precursor comprises a silicon precursor.6. The method of claim 5 , wherein the nucleation precursor comprises one or more silane claim 5 , polysilane or halosilane.7. The method of claim 1 , wherein the nucleation precursor comprises boron.8. The method of claim 7 , wherein the nucleation precursor comprises one or more borane claim 7 , alkylborane or haloborane.9. The method of claim 1 , wherein the metal precursor comprises tungsten and the conformal amorphous metal layer comprises tungsten.10. The method of claim 9 , wherein the metal precursor comprises one or more of WF claim 9 , WCl claim 9 , and WCl.11. A method of forming a 110-oriented tungsten film claim 9 , the method comprising:exposing a surface of an amorphous substrate material to a nucleation precursor to form an amorphous nucleation layer;converting the amorphous nucleation ...

METHOD TO INCREASE DEPOSITION RATE OF ALD PROCESS

A method of increasing the deposition rate of an atomic layer deposition (ALD) process by co-flowing a volatile base with metal organic, a metal halide, or metal hybride precursor. The base does not react with the precursor with which it is flowed such that the base generates no measurable film on the substrate or particles in the processing chamber during the flow time. The addition of the base catalyst increases the rate of adsorption of the precursor with which it is flowed. 1. A method for increasing a deposition rate of an atomic layer deposition (ALD) process , the method comprising:providing a processing chamber, wherein a substrate is within the chamber;flowing a first precursor into the chamber, the first precursor comprising a metal organic, a metal halide, or metal hybride, wherein adsorption of the first precursor results in a growth of a film on the substrate;co-flowing a base in a gaseous phase with the first precursor into the chamber to co-expose a surface of the substrate to the first precursor and the base, wherein the base does not generate any measurable film on the surface of the substrate and the base does not generate any measurable particles in the chamber; andflowing a second precursor into the chamber, wherein adsorption of the second precursor provides oxidation or nitridation of the film.2. The method as recited in claim 1 , further comprising purging the processing chamber after co-flowing the base and before flowing the second precursor.3. The method as recited in claim 1 , wherein the base is selected from the group consisting of pyridines claim 1 , amines and ammonias.4. The method as recited in claim 1 , wherein co-flowing the base comprises pulsing the base and the first precursor together.5. The method as recited in claim 1 , wherein co-flowing the base comprises alternating pulses of the first precursor with pulses of the base.6. The method as recited in claim 1 , further comprising co-flowing a base with the second precursor.7. ...

METHODS AND APPARATUS FOR ALD PROCESSES

The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels. 1. A lid assembly for use in an atomic layer deposition (ALD) chamber , the lid assembly comprising:a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels; anda flow guide coupled to each opposing side of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels, wherein the flow guides are operable to flow gases in a first direction and a second direction across the multi-channel showerhead, the second direction being opposite to the first direction.2. The lid assembly of claim 1 , wherein the multi-channel showerhead includes a first plate and a second plate.3. The lid assembly of claim 2 , wherein each of the plurality of first gas channels are formed through the first plate.4. The lid assembly of claim 3 , wherein a plurality each of the plurality of first gas channels are formed through the first plate and are in fluid communication with a one or more first orifices formed through the second plate.5. The lid assembly of claim 2 , wherein each of the plurality of second gas channels are formed in the second plate.6. The lid assembly of claim 2 , wherein at least a portion of the plurality of second gas channels is bounded by the first plate.7. The lid assembly of claim 1 , wherein each of the flow guides includes a manifold.8. The lid assembly of claim 7 , wherein each manifold is fluidly coupled to each of ...