Single source precursors for atomic layer deposition

The deposition of LnA1Ox films by atomic layer deposition (Ln being a lanthanide metal and x is 1 to 4) is effected by the use of a particular precursor, the precursor has the general formula: [LnA1(OR)6(ROH)]2 wherein Ln is as defined above, (OR) is an alkoxide group having from 1 to 4 carbon atoms; and (ROH) is an alcohol having from 1 to 4 carbon atoms. The preferred embodiment of the precursor is [LaA1(O<i>Pr)6(<i>PrOH)]2. A mthod of depositing the oxide comprising sequentially pulsating the precursor and an oxygen source precursor gas onto the substrate is also disclosed.