Solution and process for activating the surface of a semiconductor substrate

The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. According to the invention, this composition contains: A) an activator formed from one or more palladium complexes; B) a binder formed from one or more organic compounds chosen from compounds comprising at least two glycidyl functions and at least two isocyanate functions; C) a solvent system formed from one or more solvents capable of dissolving said activator and said binder. Application: Manufacture of electronic devices such as, in particular, integrated circuits, especially in three dimensions.

Process For The Surface-Modification Of Flyash And Industrial Applications Thereof

Processes for the surface-modification of flyash and industrial applications thereof are described in this invention, which involve surface-sensitization, surface-activation, and subsequent Cu or Ag coating of as-received flyash particles in a conventional electroless bath. These new surface-modification processes offer efficient and cost-effective alternatives to conventional processes which modify the surface of flyash particles with a costlier Sn—Pd catalyst-system. Flyash processed with the inventive processes is also suitable for a greater number of industrial applications relative to that processed with the costlier Sn—Pd catalyst-system. The as-received flyash particles, processed via the inventive surface-modification processes, find industrial applications as conductive fillers for manufacturing conducting polymers, paints, adhesives, sealers, and resins used for EMI shielding of electronic devices, in lead-based composites used in the automobile industries, and as a catalyst to purify industrial waste-water by decomposing longer chains of organic molecules into smaller ones. 1. A process for the surface-modification of flyash containing sufficient amount of titania (TiO) or any other semiconductor oxide on its surface , wherein said process comprises the steps of:{'sub': '4', 'i. suspending flyash particles in a surface-activation bath consisting of an aqueous solution of metal-salt at pH˜10-12 obtained using an aqueous NHOH solution (25-28 wt. %);'}ii. stirring the suspension as obtained in step (i) continuously under UV, visible, or solar-radiation for a period ranging between 4-6 hours to deposit metal-clusters over the surface of flyash particles;iii. separating the surface-activated flyash particles as obtained in step (ii) via filtration followed by washing with distilled-water several times to remove unwanted ions from the surface;{'sup': −1', '−1', '−1, 'sub': 4', '4', '6, 'iv. stirring the surface-activated flyash particles, as obtained in step ( ...

Method of forming low-resistance metal pattern, patterned metal structure, and display devices using the same

Disclosed herein is a method of forming low-resistance metal pattern, which can be used to obtain a metal pattern having stable and excellent characteristics by performing sensitization treatment using a copper compound before an activation treatment for forming uniform and dense metal cores, a patterned metal structure, and display devices using the same.

METHOD OF PRODUCING STANNOUS OXIDE, STANNOUS OXIDE, METHOD OF Sn PLATING SOLUTION, AND METHOD OF REMOVING IMPURITIES FROM SN PLATING SOLUTION

The method of producing stannous oxide includes: a Sn ion-containing acid solution forming step (S); a first neutralizing step (S), which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein; a Sn precipitate separating step (S); a Sn precipitate dispersing step (S), which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; and a second neutralizing step (S), which is a step of forming SnO by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, wherein Na, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step (S). 1. A method of producing stannous oxide comprising:a Sn ion-containing acid solution forming step, which is a step of preparing a Sn ion-containing acid solution by adding Sn ions to an acid solution;a first neutralizing step, which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein;a Sn precipitate separating step, which is a step of separating the Sn precipitates from the Sn ion-containing acid solution;a Sn precipitate dispersing step, which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; anda second neutralizing step, which is a step of forming SnO from the Sn precipitates by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, whereinNa, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step.2. The method of producing stannous oxide according to claim 1 , further comprising an acid ...

Conductive Fibres

A method for making a fibre electrically conductive comprises the steps of: (a) providing a fibre having a negative electric charge at the surface of the fibre, (b) applying to the fibre a substance (such as a polyelectrolyte) which provides a layer of said substance on the fibre and changes the electric charge at the surface of the fibre from negative to positive, wherein said substance is not chitosan, and (c) making the surface of the fibre electrically conductive with a metal, wherein the metal of step (c) is provided in the form of metal ions and wherein a reducing agent (for example) is employed to reduce the metal ions to elemental metal. Fabrics formed from conductive fibres are also provided.

Cu ALLOY CORE BONDING WIRE WITH Pd COATING FOR SEMICONDUCTOR DEVICE

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

METHOD OF FORMING A METAL LAYER ON A PHOTOSENSITIVE RESIN

The present invention provides a method of forming a metal layer on a specific photosensitive resin. The method comprises the following steps: (i) pretreatment: cleaning and pre-activating a surface of the photosensitive resin by using an alkaline solution; (ii) surface modification: soaking the photosensitive resin in a surface modifier to form an organic modification layer; (iii) surface activation: adding catalytic metal ions to form a metal ion complex with the organic modification layer; (iv) reduction reaction: reducing the metal ion complex into a nano metal catalyst by using a reducing agent; (v) chemical plating: soaking the photosensitive resin in an chemical plating solution to form a conductive metal layer; (vi) heat treatment: baking the photosensitive resin at 100-250° C., and (vii) electroplating thickening: electroplating the baked photosensitive resin to thicken the conductive metal layer. 2. The method of claim 1 , wherein in the surface modification step (ii) claim 1 , the soaking time is 1-20 minutes claim 1 , the concentration of the amino compound in the surface modifier is 0.1-10 g/L claim 1 , and the temperature is 30-75° C.3. The method of claim 1 , wherein the catalytic metal ions added in the surface activation step (iii) is an acidic aqueous solution containing Cu claim 1 , Ni claim 1 , Ag claim 1 , Au claim 1 , or Pd ions.4. The method of claim 1 , wherein the reducing agent used in the reduction reaction step (iv) is sodium hypophosphite claim 1 , sodium borohydride claim 1 , dimethylamine borane or hydrazine aqueous solution.5. The method of claim 1 , wherein the chemical plating solution used in the chemical plating step (v) comprises copper ions claim 1 , nickel ions claim 1 , a chelating agent claim 1 , a reducing agent claim 1 , a pH buffer claim 1 , a surfactant claim 1 , and a pH adjuster.6. The method of claim 5 , wherein the source of the copper ions is copper nitrate claim 5 , copper sulfate claim 5 , copper chloride claim 5 , ...

ENHANCED RELEASE COMPRESSION SHOE FOR USE WITH CONCRETE PRODUCT FORMING MACHINES

A compression shoe for use on a concrete products forming machine comprises a main body and a plated layer overlaid on the main body. The main body is configured to be slidingly received within a mold cavity of a concrete products mold. The plated layer overlaid on the main body of the compression shoe comprises a uniform electroless nickel (Ni), phosphorus (P), and polytetrafluoroethylene (PTFE) nano dispersion coating to effect enhanced material release characteristics by preventing the build-up of material on the compression shoes and enhancing their wear characteristics. 1. A method for forming a compression shoe for a concrete products machine comprising the steps of:providing a compression shoe having a main body configured to be slidingly received within a mold cavity of a concrete products mold; andutilizing a plated layer overlaid on the main body of the compression shoe comprising an electroless nickel (Ni), and polytetrafluoroethylene (PTFE) nano dispersion coating.2. The method of claim 1 , wherein the step of utilizing a plating layer includes forming the plated layer by co-depositing the electroless nickel simultaneously with the PTFE so that the PTFE is uniformly distributed throughout a depth of the plated layer.3. The method of claim 2 , wherein a rate of deposit on the main body is constant throughout the forming step.4. The method of claim 1 , further including the step of co-depositing a phosphorus (P) material together with the NI and PFTE materials.5. The method of claim 2 , wherein the P is co-deposited with the Ni and PTFE at an approximate 2%-13% infusion rate.6. The method of claim 2 , wherein the P is co-deposited with the Ni and PTFE at an approximate 10% infusion rate throughout the forming step.7. The method of claim 2 , further including the step of applying a heat treatment to the plating layer after the co-depositing step.8. The method of claim 7 , wherein the heat treatment is approximately 400° C.9. The method of claim 1 , wherein ...

PLATING METHOD, PLATING SYSTEM AND STORAGE MEDIUM

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer serving as a barrier film on a substrate baking the first plating layer forming a second plating layer serving as a barrier film; and baking the second plating layer A plating layer stacked body serving as a barrier film is formed of the first plating layer and the second plating layer 1. A plating method of performing a plating process on a substrate , the plating method comprising:a substrate preparing process of preparing the substrate;a plating layer forming process of forming a plating layer having a preset function by performing the plating process on the substrate with a plating liquid; anda plating layer baking process of baking the plating layer by heating the substrate,wherein by repeating the plating layer forming process and the plating layer baking process at least twice, a plating layer stacked body having a first plating layer obtained through a first plating layer forming process and a first plating layer baking process and a second plating layer obtained through a second plating layer forming process and a second plating layer baking process is formed.2. The plating method of claim 1 ,wherein each of the plating layers of the plating layer stacked body functions as a Cu diffusion barrier film.3. The plating method of claim 1 ,wherein each of the plating layers of the plating layer stacked body functions as a seed film for an electrolytic Cu plating layer.4. The plating method of claim 2 ,wherein a catalyst adsorption layer is formed by adsorbing a catalyst onto the substrate before forming the plating layer stacked body.5. The plating method of claim 4 ,wherein an adhesion layer is formed by adsorbing a coupling agent onto the substrate before forming the catalyst adsorption layer.6. The plating method of claim 4 ,wherein the first plating layer of the plating layer stacked body is ...

METAL COATING METHOD FOR PLASTIC OUTER SHAPE REQUIRING ROBUSTNESS

This application relates to a metal coating method for plastic outer part requiring robustness. In the metal coating method, first, provide a plastic outer part as a motion assistance tool. Thereafter, a cold plasma treatment is performed to introduce a polar functional group to a surface of the plastic outer part by treating the plastic outer part with cold plasma. Next, a metal coating layer is formed on the surface of the plastic outer part treated with the cold plasma by an electroless plating method. Thereafter, an adhesive strength improvement process of improving an adhesive strength between the metal coating layer and the plastic outer part to 1,000 g/cmor more by heat treatment of the plastic outer part with the metal coating layer thereon is performed. 1. A metal coating method for plastic outer part requiring robustness , the metal coating method comprising:providing a plastic outer part as a motion assistance tool;performing a cold plasma treatment by treating the plastic outer part with cold plasma to introduce a polar functional group to a surface of the plastic outer part;forming a metal coating layer, by an electroless plating method, on the surface of the plastic outer part which has been treated with the cold plasma; and{'sup': '2', 'increasing an adhesive strength between the metal coating layer and the plastic outer part to 1,000 g/cmor more by heat-treating the plastic outer part with the metal coating layer thereon.'}2. The metal coating method of claim 1 , wherein claim 1 , in the increasing of the adhesive strength claim 1 , a heat treatment is performed by heating the plastic outer part with the metal coating layer thereon claim 1 , at a temperature equal to or lower than the softening point of the plastic outer part for 5 minutes to 200 minutes.3. The metal coating method of claim 1 , wherein claim 1 , due to the increasing of adhesive strength claim 1 , the adhesive strength between the metal coating layer and the plastic outer part is ...

LARGE SCALE MANUFACTURING OF HYBRID NANOSTRUCTURED TEXTILE SENSORS

A process for the large-scale manufacturing vertically standing hybrid nanometer scale structures of different geometries including fractal architecture of nanostructure within a nano/micro structures made of flexible materials, on a flexible substrate including textiles is disclosed. The structures increase the surface area of the substrate. The structures maybe coated with materials that are sensitive to various physical parameters or chemicals such as but not limited to humidity, pressure, atmospheric pressure, and electromagnetic signals originating from biological or non-biological sources, volatile gases and pH. The increased surface area achieved through the disclosed process is intended to improve the sensitivity of the sensors formed by coating of the structure and substrate with a material which can be used to sense physical parameters and chemicals as listed previously. An embodiment with the structures on a textile substrate coated with a conductive, malleable and bio-compatible sensing material for use as a biopotential measurement electrode is provided. 116-. (canceled)17. A method for manufacturing of hybrid nanostructured textile sensors comprising:feeding one or more polymers and a matrix polymer in molten form through respective extruders to a spinneret to produce fibers having filaments of the one or more polymers in the matrix polymer, the filaments having dimensions of from about 10 to about 100 nanometers;cutting the fibers to a length of from about 0.1 to about 1.5 mm to produce nanofibers;activating the cut nanofibers in a reactor;drying the activated nanofibers;applying an adhesive to a conductive fabric;depositing the activated nanofibers as vertically standing nanofibers, the depositing step including performing an electrostatic and/or pneumatic assisted deposition process using a high strength electrostatic field of 2 kV/cm-10 kV/cm to electrostatically charge the activated nanofibers and deposit the electrostatically charged activated ...

SEMICONDUCTOR PROCESSING STATION

A semiconductor processing station including a central transfer chamber, a load lock chamber disposed adjacent to the central transfer chamber, and a cooling stage disposed adjacent to the load lock chamber and the central transfer chamber is provided. The load lock chamber is adapted to contain a wafer carrier including a plurality of wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer of the plurality of wafers between the cooling stage and the load lock chamber. 1. A semiconductor processing station comprising:a central transfer chamber;a load lock chamber disposed adjacent to the central transfer chamber, the load lock chamber adapted to contain a wafer carrier comprising a plurality of wafers; anda cooling stage disposed adjacent to the load lock chamber and the central transfer chamber, wherein the central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer of the plurality of wafers between the cooling stage and the load lock chamber.2. The semiconductor processing station as claimed in claim 1 , wherein the load lock chamber comprises:a sidewall; and 'a first segment extending along the sidewall in a height direction of the chamber and comprising a plurality of first purge nozzles.', 'a cooling pipe disposed in the load lock chamber and comprising3. The semiconductor processing station as claimed in claim 2 , wherein the load lock chamber further comprises:an external pipe, extending from outside the load lock chamber to inside the load lock chamber and connected to the first segment of the cooling pipe so as to provide a fluid to the cooling pipe.4. The semiconductor processing station as claimed in claim 3 , wherein the cooling pipe further comprises a second segment having a first end and a second end and extending along a width direction of the load lock chamber claim 3 , wherein the first segment is disposed below the second segment ...

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM

A substrate processing apparatus for forming a coating film on a peripheral edge portion including a peripheral edge of a front surface and a side surface of a substrate, includes: a substrate holder for rotatably holding the substrate; a first chemical liquid supplier for supplying a first chemical liquid onto the peripheral edge including a rear surface of the substrate; a partial removing part for removing the first chemical liquid adhering to at least a portion of the front and side surfaces; a second chemical liquid supplier for supplying a second chemical liquid for forming the coating film onto the front and side surfaces; a first chemical liquid removing part for removing the first chemical liquid remaining on the substrate to which the second chemical liquid adheres; and a controller for controlling the parts described above. 1. A substrate processing apparatus for forming a coating film on a peripheral edge portion including a peripheral edge of a front surface of a substrate and a side surface of the substrate , comprising:a substrate holder configured to rotatably hold the substrate;a first chemical liquid supplier configured to supply a first chemical liquid onto the peripheral edge of the substrate including a rear surface of the substrate;a partial removing part configured to remove, among the first chemical liquid supplied onto the substrate, the first chemical liquid adhering to at least a portion of the front surface and the side surface of the substrate;a second chemical liquid supplier configured to supply a second chemical liquid for forming the coating film onto the front surface and the side surface of the substrate;a first chemical liquid removing part configured to remove the first chemical liquid remaining on the substrate to which the second chemical liquid adheres; anda controller configured to control the substrate holder, the first chemical liquid supplier, the partial removing part, the second chemical liquid supplier, and the first ...

MULTILAYER METAL MATRIX COMPOSITE AND FABRICATION THEREOF

A multilayer metal-matrix composite that includes a metal core sheet and a plurality of side sheets is disclosed in which the metal core sheet is reinforced with a reinforcement material selected from the group consisting of ceramic reinforcements. The reinforced metal core sheet is coated with an electroless coating. A method of fabricating a multilayer metal-matrix composite with reinforced particles and a coating using a combination of electroless coating method and accumulative roll bonding method is further described in this disclosure with the aim of reducing the number of required accumulative roll bonding cycles to obtain improved or desired properties. 1. A multilayer metal-matrix composite , comprising:at least two side sheets, including a first side sheet and a second side sheet; anda metal core sheet, the metal core sheet being disposed between the first side sheet and the second side sheet,wherein the metal core sheet is coated with an electroless coating selected from the group consisting of Nickel-Phosphorus electroless coating, Nickel-Boron electroless coating, and combinations thereof, andwherein the metal core sheet is reinforced with a reinforcement material selected from the group consisting of Tungsten carbide, Aluminum oxide, polymeric reinforcements, and combinations thereof.2. The multilayer metal matrix composite of claim 1 , wherein the metal core sheet is selected from the group consisting of aluminum claim 1 , iron claim 1 , nickel claim 1 , gold claim 1 , copper claim 1 , tin claim 1 , titanium claim 1 , cobalt claim 1 , magnesium claim 1 , platinum claim 1 , palladium claim 1 , zirconium claim 1 , silver claim 1 , beryllium claim 1 , aluminum alloy claim 1 , iron based alloy claim 1 , magnesium alloy claim 1 , platinum alloy claim 1 , palladium alloy claim 1 , zirconium alloy claim 1 , steel claim 1 , brass claim 1 , silver alloy claim 1 , beryllium alloy claim 1 , super alloy claim 1 , and combinations thereof.3. The multilayer metal ...

SEMICONDUCTOR DEVICE HAVING A Pd-CONTAINING ADHESION LAYER

According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate, a barrier layer formed of Co or an alloy containing Co on the adhesion layer, and a metal layer formed of Cu, Ag or Au on the barrier layer. 1. A method of manufacturing a semiconductor device , comprising:a step of forming an adhesion layer of Pd or an alloy containing Pd on a semiconductor substrate formed of GaAs;a step of forming a barrier layer of Co or an alloy containing Co on the adhesion layer; anda heat treatment step of increasing the temperature of the semiconductor substrate, the adhesion layer and the barrier layer to 25° C. to 250° C. to form Pd—Ga—As on the adhesion layer and to form an alloy layer containing Co and Pd between the adhesion layer and the barrier layer.2. The method of manufacturing a semiconductor device according to claim 1 , comprising a step of forming a metal layer of Cu claim 1 , Ag or Au on the barrier layer before the heat treatment step.3. A method of manufacturing a semiconductor device claim 1 , comprising: a step of performing electroless plating on the semiconductor substrate to form a barrier layer of Co—P or Co—W—P on the adhesion layer; and', 'a step of forming a metal layer of Cu, Ag or Au on the barrier layer., 'a step of forming an adhesion layer of Pd or an alloy containing Pd on a semiconductor substrate formed of GaAs;'}4. The method of manufacturing a semiconductor device according to claim 3 , wherein the metal layer is of a two-layer structure having Au in a lower layer and having Cu in an upper layer. The present invention relates to a semiconductor device having a metal layer used, for example, as an electrode and to a method of manufacturing the semiconductor device.PTL 1 discloses a technique to form a barrier layer, a seed layer and a wiring layer on a side wall of an insulating film by a wet process.PTL 1: ...

SUPPORTED GAS SEPARATION MEMBRANE AND METHOD

A method of making a gas separation membrane system by providing a porous support material having deposited thereon a metal membrane layer and imposing upon the surface thereof certain surface characteristics that provide for surface activation that enhances the placement thereon of a subsequent metal membrane layer. The gas separation membrane system is useful in the separation of hydrogen from hydrogen-containing gas streams. 1. A system for making a composite gas separation module , wherein said system comprises:a porous support having a metal membrane layer thereon with a surface;means for imposing onto said surface and said metal membrane layer a surface morphology that provides for an activated surface having enhanced activation properties for the placement thereon of a subsequent metal membrane layer;means for placing said subsequent metal membrane layer upon said activated surface; andmeans for annealing said subsequent metal membrane layer to provide an annealed metal layer.2. The system as recited in claim 1 , wherein said means for imposing includes a polishing paper having abrading particles with an average particle diameter in the range of from 1 to 10 microns.3. The system as recited in claim 2 , wherein said abrading particles of said polishing paper comprise a compound material selected from a group consisting of silicon carbide claim 2 , alpha alumina claim 2 , zirconia claim 2 , ceria claim 2 , yttria claim 2 , calcium claim 2 , magnesium claim 2 , and a combination thereof.4. The system as recited in claim 1 , wherein said means for imposing includes an abrasive device rotating in the same direction as said porous support claim 1 , wherein said abrasive device moves along the axis of rotation of said porous support.5. The system as recited in claim 1 , wherein said surface morphology comprises a roughness wherein for any selected surface area on said activated surface claim 1 , said any selected surface area has a mean surface roughness in the ...

Aluminum alloy substrate for magnetic recording medium, substrate for magnetic recording medium, magnetic recording medium, and hard disk drive

An aluminum alloy substrate for a magnetic recording medium, the substrate including: Si in a range of 9.5 to 13.0% by mass or less and Cu in a range of 0.5 to 3.0% by mass or less, wherein a content of Fe is less than 0.01% by mass, the balance is Al, the substrate has a diameter in a range of 53 to 97 mm and a thickness in a range of 0.4 to 0.9 mm or less, and the substrate satisfies at least one of the following conditions (i) and (ii): (i) Sr is contained in the substrate in a range of 0.005% by mass or more and 0.1% by mass or less; and (ii) at least a part of the Si is present as Si particles, and an average particle diameter of particles having a longest diameter of 0.5 μm or more among the Si particles is 2 μm or less.

ELECTROCHEMICAL DOPING OF THIN METAL LAYERS EMPLOYING UNDERPOTENTIAL DEPOSITION AND THERMAL TREATMENT

A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached. 1. A method , comprising:depositing a liner in a feature of a substrate, wherein the feature defines an interconnect to an underlying conductor, wherein a portion of the liner contacts the underlying conductor;depositing a monolayer of an electronegative element over the liner by an underpotential deposition process, the underpotential deposition process including deposition from a plating solution at a potential that avoids electroplating from the plating solution;after depositing the monolayer, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the electronegative element to an interface of the liner and a dielectric layer of the substrate, the migration of the electronegative element producing an adhesive barrier at the interface that improves adhesion between the liner and the dielectric layer of the substrate;repeating the operations of depositing the monolayer of the electronegative element and performing the thermal treatment until a predefined number of cycles is reached.2. The method of claim 1 , wherein the thermal treatment is defined by annealing at a temperature of approximately 100 to 400 C.3. The method of claim 1 , wherein the predefined number of cycles is approximately 3 to 10 cycles.4. The method of claim 1 , wherein ...

METHOD FOR COATING METALLIC SURFACES OF SUBSTRATES, AND OBJECTS COATED ACCORDING TO SAID METHOD

A method and composition for coating surfaces, a corresponding coating and the use of objects coated according to said method. A cleaned, metallic surface is contacted with an aqueous composition that is a dispersion or suspension, and drying and/or baking the organic coating or optionally, drying the organic coating and coating with an equivalent or additional coating composition prior to a drying and/or baking. The aqueous composition has a pH of 4 to 11 and contains an anionic polyelectrolyte in a quantity of 0.01 to 5.0 wt. % relative to the total mass of the composition, which may have a solids content of from 2 to 40 wt. %. The solids have an average particle size from 10 to 1000 nm. A coating forms on the basis of an ionogenic gel which binds cations released from the metallic surface that originate from a pretreatment stage or from the contacting. 123-. (canceled)24. A method for coating metallic surfaces of substrates comprising the steps of:preparing a substrate with a cleaned metallic surface,contacting and coating metallic surfaces with an aqueous composition in the form of a dispersion or suspension,optionally rinsing the organic coating; anddrying or baking the organic coating oroptionally drying the organic coating and coating with a similar or additional coating composition before drying or baking,wherein the aqueous composition is in the form of dispersion and suspension,wherein the aqueous composition comprises an anionic polyelectrolyte in an amount of 0.01 to 5.0 wt %, based on the total mass of the aqueous composition;and wherein the anionic polyelectolyte is added to a dispersion of film-forming polymers or a suspension of film-forming inorganic particles with a solids content of 2 to 40 wt % and an average particle size of 10 to 1000 nm to form the aqueous composition, wherein the aqueous composition has a pH value in the range of 4 to 11 and forms a coating based on an ionogenic gel which binds cations dissolved out of the metallic surface, ...

LARGE SCALE MANUFACTURING OF HYBRID NANOSTRUCTURED TEXTILE SENSORS

A process for the large-scale manufacturing vertically standing hybrid nanometer scale structures of different geometries including fractal architecture of nanostructure within a nano/micro structures made of flexible materials, on a flexible substrate including textiles is disclosed. The structures increase the surface area of the substrate. The structures maybe coated with materials that are sensitive to various physical parameters or chemicals such as but not limited to humidity, pressure, atmospheric pressure, and electromagnetic signals originating from biological or non-biological sources, volatile gases and pH. The increased surface area achieved through the disclosed process is intended to improve the sensitivity of the sensors formed by coating of the structure and substrate with a material which can be used to sense physical parameters and chemicals as listed previously. An embodiment with the structures on a textile substrate coated with a conductive, malleable and bio-compatible sensing material for use as a biopotential measurement electrode is provided. 1. A method for manufacturing of hybrid nanostructured textile sensors comprising:embedding polymer nanofibers into a matrix polymer to form a yarn;dissolving the matrix polymer to expose the polymer nanofibers; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'coating the polymer nanofibers with a film. The method as recited in Wherein the yarn is a Micro denier yarn.'}3. The method as recited in wherein the micro denier yarn has a helical structure.4. The method as recited in wherein the polymer nanofibers are vertically standing structures.5. The method as recited in wherein the polymer nanofibers are helical structures6. The method as recited in further comprising the step of:imparting an electrostatic charge to the yarn prior to the dissolving the matrix polymer.7. The method as recited in wherein the polymer nanofibers are made of a polymer material selected from the group consisting of ...

METHOD FOR FABRICATING METAL AND OXIDE HYBRID-COATED NANOCARBON

Disclosed herein is a method for fabricating metal and oxide hybrid-coated nanocarbon, comprising: a) coating nanocarbon with an oxide to give oxide-coated nanocarbon; b) coating the oxide-coated nanocarbon with a metal by electroless plating to give metal and oxide hybrid-coated nanocarbon; and c) crystallizing the metal and oxide hybrid-coated nanocarbon through thermal treatment at a high temperature. Also, the metal and oxide hybrid-coated nanocarbon fabricated using the method is provided. 1. A method for fabricating metal and oxide hybrid-coated nanocarbon , comprising:a) coating nanocarbon with an oxide to give oxide-coated nanocarbon;b) coating the oxide-coated nanocarbon with a metal by electroless plating to give metal and oxide hybrid-coated nanocarbon; andc) crystallizing the metal and oxide hybrid-coated nanocarbon through thermal treatment at a high temperature.2. The method of claim 1 , wherein the nanocarbon of step a) is CNF (Carbon nano fiber) claim 1 , MWCNT (multi wall carbon nanotube) claim 1 , TWCNT (Thin wall carbon nanotube) claim 1 , DWCNT (double wall carbon nanotube) or SWCNT (single wall carbon nanotube).3. The method of claim 1 , wherein the oxide is TiO claim 1 , SiO claim 1 , or AlO.4. The method of claim 1 , wherein the nanocarbon is used at a volume ratio of 1:1˜1:20 with the oxide.5. The method of claim 1 , wherein the nanocarbon is used at a weight ratio of 1:1˜1:50 with an oxide.6. The method of claim 1 , wherein the oxide is coated at a thickness of 5˜20 nm.7. The method of claim 1 , further comprising a1) removing impurities from the nanocarbon by washing in a solvent and thermally oxidizing claim 1 , before the step a).8. The method of claim 1 , further comprising a2) thermally treating the oxide-coated nanocarbon at 300˜800° C. for 30 min to 5 hrs in an Oor inert gas atmosphere or in a vacuum (10˜10torr) claim 1 , after the step a).9. The method of claim 1 , wherein the metal is nickel (Ni) or copper (Cu).10. The method of ...

Coatings for turbine parts

A method and a turbine part having a coating with a matrix layer that includes a high temperature resistant hydrophobic polysiloxane filler, wherein the coating has superior mechanical strength and temperature resistance.

Method for Reducing Thin Films on Low Temperature Substrates

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive.

METHOD FOR REDUCING THIN FILMS ON LOW TEMPERATURE SUBSTRATES

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive. 1. A method comprising:dispersing in a liquid an organic reducer and a plurality of particles containing metal oxide;depositing said dispersion on a substrate as a non-conductive thin film, wherein said depositing is performed by printing; andexposing said non-conductive thin film to a single pulsed electromagnetic emission in an ambient atmosphere for said organic reducer to initially react with said metal oxide chemically via a redox reaction to form metal particles, and for sintering said metal particles to render said thin film from electrically non-conductive to electrically conductive.2. The method of claim 1 , wherein said substrate is paper.3. The method of claim 1 , wherein said substrate is polyethylene terephthalate (PET).4. The method of claim 1 , wherein said substrate is polymer.5. The method of claim 1 , wherein said reducer is polyvinylpyrrolidone (PVP).6. The method of claim 1 , wherein said reducer is ascorbic acid.7. The method of claim 1 , wherein said reducer is ethylene glycol/glycerol.8. The method of claim 1 , wherein said metal oxide is copper oxide.9. The method of claim 1 , wherein said pulsed electromagnetic emission is generated by a laser.10. The method of claim 1 , wherein said pulsed electromagnetic emission is generated by a flash lamp.11. The method of claim 1 , wherein said pulsed electromagnetic emission is generated by an arc lamp.12. The method of claim 1 , wherein said pulsed electromagnetic emission is generated by a radio-frequency induction heater.13. The ...

METAL-CONTAINING FABRICS AND MEMBRANES, AND METHOD OF MANUFACTURING THEREOF

A method of manufacturing a metal fabric or membrane, the method comprises providing an ink comprising a plurality of semiconductor particles disposed in a first solvent. The method comprises applying the ink to a fabric or membrane to obtain a fabric or membrane comprising a plurality of semiconductor particles. Finally, the method comprises contacting the fabric or membrane comprising the plurality of semiconductor particles with a deposition solution comprising a second solvent, an autocatalytic agent, and metal cations to thereby cause a reaction to occur such that the metal cations are reduced and at least partially displace the semiconductor particles, to thereby provide a metal fabric or membrane. 1. A method of manufacturing a metal fabric or membrane , the method comprising:providing an ink comprising a plurality of semiconductor particles disposed in a first solvent;applying the ink to a fabric or membrane to obtain a fabric or membrane comprising a plurality of semiconductor particles; andcontacting the fabric or membrane comprising the plurality of semiconductor particles with a deposition solution comprising a second solvent, an autocatalytic agent, and metal cations to thereby cause a reaction to occur such that the metal cations are reduced and at least partially displace the semiconductor particles, to thereby provide a metal fabric or membrane.2. A method according to claim 1 , wherein the semiconductor particles comprise an organic semiconductor or an inorganic semiconductor.3. A method according to claim 2 , wherein the semiconductor particles comprise silicon particles.4. A method according to claim 1 , wherein the concentration of the semiconductor particles in the first solvent is between 1 mg mland 10 g ml.5. A method according to claim 1 , wherein the ink further comprises a stabiliser.6. A method according to claim 1 , wherein the fabric or membrane comprises a cotton fabric claim 1 , a linen fabric claim 1 , a paper fabric or a ...

OIL AND GAS WELL PUMP COMPONENTS AND METHOD OF COATING SUCH COMPONENTS

A centrifugal pump component for an oil and gas well pump includes a substrate with an outer surface configured to contact oil and gas well fluid. The component further includes a coating formed on at least a portion of the outer surface. The coating includes a combination of hard particles and a metal matrix. 1. A centrifugal pump component for an oil and gas well pump , said component comprising:a substrate comprising an outer surface configured to contact oil and gas well fluid; anda coating formed on at least a portion of said outer surface, wherein said coating includes a combination of hard particles and a metal matrix.2. The component in accordance with claim 1 , wherein said hard particles comprises diamond particles and said metal matrix comprises nickel and phosphorous.3. The component in accordance with claim 2 , wherein said diamond particles have a diameter within a range from approximately 0.5 micrometers (μm) to approximately 4 μm.4. The component in accordance with claim 2 , wherein said coating comprises a diamond particle concentration within a range from approximately 25 volume percent to approximately 50 volume percent.5. The component in accordance with claim 2 , wherein said coating comprises a phosphorous concentration within a range from approximately 6 volume percent to approximately 12 volume percent.6. The component in accordance with claim 1 , wherein said metal matrix comprises nickel and boron.7. The component in accordance with claim 1 , wherein said coating has a thickness within a range from approximately 10 μm to approximately 152 μm.8. The component in accordance with claim 1 , wherein said coating is formed by an electroless nickel plating process.9. The component in accordance with claim 8 , wherein said coating is post-heat treated.10. A centrifugal pump for an oil and gas well comprising:at least one diffuser comprising a diffuser outer surface, wherein said diffuser outer surface is configured to contact oil and gas well fluid ...

Electrostatic Coating of Metal Thin Layers with Adjustable Film Properties

Methods for forming thin, pinhole-free conformal metal layers on both conducting and non-conducting surfaces, where the morphology and properties of the metal layers are tuned to meet desired parameters by adjusting the concentration of ionic liquids during the deposition process. The formed metal films contain tunable properties for solar and electronic use and provide specific advantages for non-conducting surfaces, which are otherwise unsuitable for electroplating without the presence of the formed metal films. The disclosed methods do not require the presence of a voltage or external electric field but form the metal films through an electroless technique using electrostatic interactions between negatively charged nanoparticles. In addition, the disclosed methods are compatible with solution phase processing and eliminate the need to transfer the surfaces into a vacuum chamber for a chemical or physical vapor deposition to form a metal layer.

ELECTRICAL, PLATING AND CATALYTIC USES OF METAL NANOMATERIAL COMPOSITIONS

This invention relates generally to uses of novel nanomaterial composition and the systems in which they are used, and more particularly to nanomaterial compositions generally comprising carbon and a metal, which composition can be exposed to pulsed emissions to react, activate, combine, or sinter the nanomaterial composition. The nanomaterial compositions can alternatively be utilized at ambient temperature or under other means to cause such reaction, activation, combination, or sintering to occur. 1. A system for sintering materials , said system comprising:a flashlamp generates a plurality of electromagnetic emission pulses for irradiating a film on a substrate in ambient air in order to sinter said film on said substrate such that the conductivity of said film on said substrate increases by at least two-fold, wherein said film includes at least one metal less than 1 micrometer; anda control circuit controls said flashlamp to limit a duration of each of said electromagnetic emission pulses to be between one microsecond and one hundred milliseconds.2. The system of claim 1 , wherein said system further includes a printer for printing said film on said substrate using a formulation having said one metal less than 1 micrometer.3. The system of claim 2 , wherein said one metal is copper.4. The system of claim 1 , wherein said substrate has a decomposition temperature below 450 degrees Celsius.5. The system of claim 1 , wherein said substrate includes a substance selected from the group consisting of PET claim 1 , polyester claim 1 , plastics claim 1 , polymers claim 1 , resins claim 1 , paper products claim 1 , laminates and combinations thereof.6. The system of claim 1 , wherein said flashlamp is a xenon flashlamp.7. The system of claim 1 , wherein said system further includes a conveyor for moving said substrate. The present application is a divisional application of U.S. patent application Ser. No. 11/720,171 (filed May 24, 2007). This patent application claims ...

NITRIDED COMPONENT SURFACE REPAIR WITH AUTOFRETTAGE

A method for repairing a nitrided surface having a damaged area is disclosed. The method includes introducing the nitrided surface into a bath containing electroless material for a predetermined period of time. The method also includes coating the damaged area with a layer of the electroless material. Further the method subjects the layer to an autofrettage process. The electroless material is heat treated at a predetermined temperature for a predefined time. 1. A method for repairing a nitrided surface having a damaged area , the method comprising:introducing the nitrided surface into a bath containing electroless material for a predetermined period of time;coating the damaged area with a layer of the electroless material;performing an autofrettage process on the layer; andheat treating the electroless material at a predetermined temperature for a predefined time.2. The method of claim 1 , wherein the autofrettage process includes:disposing the nitrided surface in a chamber;introducing autofrettage liquid at a predetermined pressure into the chamber;maintaining the predetermined pressure in the chamber for a first period of time;reducing the pressure in the bath after the first period of time has elapsed.3. The method of claim 2 , wherein the predetermined pressure is about 150 claim 2 ,000 psi.4. The method of claim 2 , wherein the first period of time ranges from 0.5 to 1.0 seconds.5. The method of claim 2 , wherein the pressure in the bath is reduced from the predetermined pressure to an atmospheric pressure over a second period of time different from the first period of time.6. The method of claim 2 , wherein the pressure in the bath is reduced linearly.7. The method of claim 6 , wherein the second period of time ranges from about 1 hour to about 5 hours.8. The method of claim 1 , wherein the electroless material is configured to provide surface hardness between 60 and 70 HRC.9. The method of claim 1 , wherein the electroless material includes at least one of ...

METHOD AND DEVICE FOR PREPARING HIGH STRENGTH AND DURABLE SUPER-HYDROPHOBIC FILM LAYER ON INNER WALL OF ELONGATED METAL TUBE

Method for preparing high-strength and durable super-hydrophobic film layer on inner wall of elongated metal tube includes roughening treatment of inner wall of a metal tube, electrodepositing preparation of nickel-phosphorus alloy layer and functional coating, heat treatment, subsequent anodizing and low surface energy modification. The method greatly reduces the influence of local mass transfer resistance, and a uniform nanocrystalline film layer is electroplated under the ultrasound induction. Since only electroplating solution is filled in the tube during the preparation process, the consumption of device and raw materials is greatly reduced. Also, since silica particles are added to the electroplating solution in preparing the nanocrystalline film layer, the surface morphology can be made more uniform and denser in terms of the microscopic morphology. Nano-scale channels structures are etched, so that the super-hydrophobic inner surface can have a better ability to store air, and its water flow impact resistance is greatly enhanced. 1. A method for preparing a high-strength and durable super-hydrophobic film layer on an inner wall of an elongated metal tube , comprising steps of:roughening treatment of the inner wall of the elongated metal tube comprising: etching the inner wall of the elongated metal tube with 2 mol/L to 4 mol/L of nitric acid or 2 mol/L to 4 mol/L of hydrochloric acid for 5 min to 30 min, so that a rough structure is formed on the inner wall of the elongated metal tube; and exposing the active surface of the inner wall of the elongated metal tube;preparation of a nickel-phosphorus alloy layer comprising: depositing the nickel-phosphorus alloy layer on the inner wall of the rough metal tube by use of an electroless plating method, wherein: a first plating solution used in the electroless plating method comprises: 0.1 mol/L to 1 mol/L of nickel chloride hexahydrate, 0.1 mol/L to 1 mol/L of sodium hypophosphite, 0.1 mol/L to 1 mol/L of trisodium ...

Growth of metal on a dielectric

A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

Method for Reducing Thin Films on Low Temperature Substrates

A method for producing an electrically conductive thin film on a substrate is disclosed. Initially, a reducible metal compound and a reducing agent are dispersed in a liquid. The dispersion is then deposited on a substrate as a thin film. The thin film along with the substrate is subsequently exposed to a pulsed electromagnetic emission to chemically react with the reducible metal compound and the reducing agent such that the thin film becomes electrically conductive. 1. A method for producing an electrically conductive thin film on a substrate , said method comprising:depositing a reducer and a metal oxide on a thin film; andexposing said thin film to a single pulsed electromagnetic emission in an ambient atmosphere to allow said reducer to initially react with said metal oxide chemically via a redox reaction to form metal particles and to subsequently sinter said metal particles to render said thin film electrically conductive.2. The method of claim 1 , wherein said substrate is paper.3. The method of claim 1 , wherein said substrate is PET.4. The method of claim 1 , wherein said substrate is polymer.5. The method of claim 1 , wherein said initial redox reaction and said subsequent sintering occur within said single pulsed electromagnetic emission.6. The method of claim 1 , wherein said pulsed electromagnetic emission is generated by any one of a laser claim 1 , a flash lamp claim 1 , a directed plasma arc lamp claim 1 , microwave claim 1 , a radiofrequency induction heater claim 1 , an electron beam claim 1 , and an arc lamp.7. The method of claim 1 , wherein said reducer is aluminum.8. The method of claim 1 , wherein said reducer is magnesium.9. The method of claim 1 , wherein said reducer reducible.10. The method of claim 1 , wherein said metal oxide is selected from the group consisting of molybdenum oxide claim 1 , tungsten oxide claim 1 , rhenium oxide claim 1 , iron oxide claim 1 , ruthenium oxide claim 1 , osmium oxide claim 1 , cobalt oxide claim 1 , ...

Process for depositing a metal or metal alloy on a surface of a substrate including its activation

A process for depositing metal or metal alloy on a substrate including treating the substrate surface with an activation solution comprising a source of metal ions so the metal ions are adsorbed on the substrate surface, treating the obtained substrate surface with a treatment solution containing an additive selected from thiols, thioethers, disulphides and sulphur containing heterocycles, and a reducing agent suitable to reduce the metal ions adsorbed on the substrate surface selected from boron based reducing agents, hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and subsequently treating the substrate surface with a metallizing solution comprising a source of metal ions to be deposited such that a metal or metal alloy is deposited thereon.

Nitrided component surface repair

A plunger for fuel injection assembly is provided. The plunger includes a nitrided surface. The nitrided surface includes a damaged area. An electroless material is coated on the damaged area.

Liquid deposition composition and process for forming metal therefrom

A process for depositing a metal includes disposing a liquid deposition composition on a substrate, the liquid deposition composition including a metal cation; a reducing anion; and a solvent; evaporating the solvent; increasing a concentration of the reducing anion increases in the liquid deposition composition due to evaporating the solvent; performing an oxidation-reduction reaction between the metal cation and the reducing anion in response to increasing the concentration of the reducing anion when the reducing anion is present at a critical concentration; and forming a metal from the metal cation to deposit the metal on the substrate.

PHOTOVOLTAIC CELL WITH POROUS SEMICONDUCTOR REGIONS FOR ANCHORING CONTACT TERMINALS, ELECTROLITIC AND ETCHING MODULES, AND RELATED PRODUCTION LINE

A photovoltaic cell is proposed. The photovoltaic cell includes a substrate of semiconductor material, and a plurality of contact terminals each one arranged on a corresponding contact area of the substrate for collecting electric charges being generated in the substrate by the light. For at least one of the contact areas, the substrate includes at least one porous semiconductor region extending from the contact area into the substrate for anchoring the whole corresponding contact terminal on the substrate. In the solution according to an embodiment of the invention, each porous semiconductor region has a porosity decreasing moving away from the contact area inwards the substrate. An etching module and an electrolytic module for processing photovoltaic cells, a production line for producing photovoltaic cells, and a process for producing photovoltaic cells are also proposed. 1. A photovoltaic cell including a substrate of semiconductor material , a plurality of contact terminals each one arranged on a corresponding contact area of the substrate for collecting electric charges being generated in the substrate by the light , for at least one of the contact areas the substrate including at least one porous semiconductor region extending from the contact area into the substrate for anchoring the whole corresponding contact terminal on the substrate , whereineach porous semiconductor region has a porosity decreasing moving away from the contact area inwards the substrate.2. The photovoltaic cell according to claim 1 , wherein the porosity decreases from 70%-90% at the contact area to 10%-30% at a maximum depth in the substrate.3. The photovoltaic cell according to claim 1 , wherein each porous semiconductor region has a thickness lower than 1 μm claim 1 , the corresponding contact terminal being penetrated inside the whole thickness of the region of porous semiconductor region.4. The photovoltaic cell according to claim 1 , wherein each porous semiconductor region ...

Nickel-coated hexagonal boron nitride nanosheet composite powder, preparation and high performance composite ceramic cutting tool material

The invention relates to nickel-coated hexagonal boron nitride nanosheet composite powder, its preparation and high-performance composite ceramic cutting tool material. The composite powder has a core-shell structure with BNNS as the core and Ni as the shell. The self-lubricating ceramic cutting tool material is prepared by wet ball milling mixing and vacuum hot-pressing sintering with a phase alumina as the matrix, tungsten-titanium carbide as the reinforcing phase, nickel-coated hexagonal boron nitride nanosheet composite powder as the solid lubricant and magnesium oxide and yttrium oxide as the sintering aids. The invention also provides preparation methods of the nickel-coated hexagonal boron nitride nanosheet composite powder and the self-lubricating ceramic cutting tool material. 1. A nickel-coated hexagonal boron nitride nanosheet composite powder (BNNS@Ni) , wherein the composite powder has a core-shell structure with BNNS as the core and Ni as the shell.2. The nickel-coated hexagonal boron nitride nanosheet composite powder (BNNS@Ni) as claimed in claim 1 , wherein the Ni particles in the nickel-coated hexagonal boron nitride nanosheet composite powder are uniform in size claim 1 , and uniformly coated on the surface of the BNNS.3. The nickel-coated hexagonal boron nitride nanosheet composite powder (BNNS@Ni) as claimed in claim 1 , wherein the average sheet diameter of BNNS in the nickel-coated hexagonal boron nitride nanosheet composite powder is 100-800 nm claim 1 , and the average sheet thickness is 1-7 nm.4. The preparation method of the nickel-coated hexagonal boron nitride nanosheet composite powder (BNNS@Ni) as claimed in claim 1 , comprises the following steps:(1) the BNNS powder is proportionally weighed, added into an appropriate amount of isopropanol, ultrasonically dispersed for 20-30 min, and then centrifugally separate to obtain the dispersed BNNS powder;(2) the dispersed BNNS powder obtained in step (1) is added into the sensitizing solution ...

CORROSION-RESISTANT ALLOY COATING FILM FOR METAL MATERIALS AND METHOD FOR FORMING SAME

A method for producing an iron base material having a coating includes forming a Ni—Cr—Si corrosion-resistant alloy coating film by a combination of composite plate processing with a Ni solution containing Cr and Si, and a heat treatment after the composite plate processing, wherein the Ni—Cr—Si corrosion-resistant film contains Ni, Cr, and Si, and wherein a content ratio of Cr is 1 to 50 wt % of the alloy coating film, a content ratio of Si is 0.1 to 30 wt % of the alloy coating film, and the alloy coating film has a thickness of 0.1 to 1000 μm, the composite plate processing forms a composite plating film, in which a chromium silicide particle selected from CrSi, CrSi, CrSi, CrSi and CrSiis co-deposited in a Ni matrix, and the heat treatment at 600° C. or higher decomposes and solid-solubilizes 50% or more of the chromium silicide particle in the Ni matrix. 1. A method for producing an iron base material having a coating , comprising:forming a Ni—Cr—Si corrosion-resistant alloy coating film by a combination of composite plate processing with a Ni solution containing Cr and Si, and a heat treatment after the composite plate processing,wherein the Ni—Cr—Si corrosion-resistant alloy coating film contains Ni, Cr, and Si as essential constituents, and wherein a content ratio of Cr is 1 to 50 wt % based on a total weight of the alloy coating film, a content ratio of Si is 0.1 to 30 wt % based on the total weight of the alloy coating film, and the alloy coating film has a thickness of 0.1 to 1000 μm,{'sub': 3', '5', '3', '3', '2', '2, 'the composite plate processing is a process of forming a composite plating film, in which at least one chromium silicide particle selected from the group consisting of CrSi, CrSi, CrSi, CrSi and CrSiis co-deposited in a Ni matrix, and'}in the heat treatment, the composite plating film is heated at a temperature of 600° C. or higher to decompose and solid-solubilize 50% or more of the chromium silicide particle co-deposited in the Ni matrix ...

METHOD FOR MANUFACTURING SURGE ABSORBING DEVICE

A method for manufacturing a surge absorbing device is provided. The method includes providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively. 1. A method for manufacturing a surge absorbing device , the method comprising:forming a first plating layer and a second plating layer on a first end and a second end of a ceramic tube having a hollow space defined therein and exposed through the first and second ends, respectively;placing a surge absorbing element within the hollow space of the ceramic tube;disposing first and second brazing rings on the first plating layer and the second plating layer, respectively;disposing first and second sealing electrodes on the first and second brazing rings respectively; andmelting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively,wherein the forming of the first plating layer and the second plating layer on the first end and the second end respectively, comprises:etching the first end and the second end of the ceramic tube;forming first and second electroless plating catalyst layers on the etched first end and the etched second end respectively;forming first and second metal layers on the first end and the second end of the ceramic tube respectively ...

NANNOPARTICLE/POROUS GRAPHENE COMPOSITE, SYNTHESIZING METHODS AND APPLICATIONS OF SAME

In one aspect, the invention relates to a method of synthesizing a nannoparticle/porous graphene composite, including dispersing porous graphene structures into a solvent to form a dispersion of the porous graphene structures therein, adding precursors of nanoparticles into the dispersion of the porous graphene structures in the solvent to form a precursor mixture, and treating the precursor mixture to form a nannoparticle/porous graphene composite. The composite is formed such that the nanoparticles are uniformly distributed in pores of the graphene structures. The composite is very useful as electrode materials in electrochemical devices, in which efficient ions and electron transports are required. 1. A method of synthesizing a nannoparticle/porous graphene composite , comprising:dispersing porous graphene structures into a solvent to form a dispersion of the porous graphene structures therein;adding precursors of nanoparticles into the dispersion of the porous graphene structures in the solvent to form a precursor mixture; andtreating the precursor mixture to form a nannoparticle/porous graphene composite, where the nanoparticles are uniformly distributed in pores of the graphene structures.2. The method of claim 1 , wherein the nanopartiles are in sizes of less than 10 nanometers.3. The method of claim 1 , wherein the porous graphene structures comprise mesoporous graphene fibers claim 1 , mesoporous graphene tubes claim 1 , mesoporous graphene wires claim 1 , or a combination of them.4. The method of claim 3 , wherein the mesoporous graphene fibers comprise nitrogen-doped graphene fibers.5. The method of claim 1 , wherein the solvent comprises alcohol claim 1 , water claim 1 , or a combination of them.6. The method of claim 5 , wherein the solvent comprises ethanol claim 5 , or ethylene glycol.7. The method of claim 1 , wherein the precursors dissolved in the solvent are adsorbed into the pores of the porous graphene structures.8. The method of claim 1 , ...

NOVEL ADHESION PROMOTING PROCESS FOR METALLISATION OF SUBSTRATE SURFACES

A method is provided for metallisation of non-conductive substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies a metal oxide adhesion promoter which is activated and then metal plated. The method provides high adhesion of the non-conductive substrate to the plated metal layer. 1. Wet chemical method for plating a metal onto a non-conductive substrate comprising the steps ofi. depositing on at least a portion of the non-conductive substrate surface a layer of a metal oxide compound selected from the group consisting of zinc oxides, titanium oxides, zirconium oxides, aluminum oxides, silicon oxides, and tin oxides or mixtures of the aforementioned; and thereafterii. heating the non-conductive substrate at a temperature of more than 400° C. and thereby forming an adhesive layer with a thickness of 5 nm to 500 nm of the metal oxide compound on at least a portion of the substrate surface; and thereafteriii. metal plating at least the substrate surface bearing the adhesive layer of the metal oxide compound by applying a wet-chemical plating method and thereafter;iv. heating the metal plated layer to a maximum temperature of between 150 and 500° C.2. Method according to wherein the metal oxide compound is selected from the group consisting of ZnO claim 1 , TiO claim 1 , ZrO claim 1 , AlO claim 1 , SiO claim 1 , SnOor mixtures of the aforementioned.3. Method according to wherein the metal oxide compound is doped with germanium claim 1 , aluminum claim 1 , boron claim 1 , arsenic or phosphorus in a content of between 10-10 wt. %.4. (canceled)5. (canceled)6. Method according to wherein the heating in step iv. is performed in two steps and wherein the first heating step is at a temperature of up to a maximum of between 100 and 200° C. and the second heating step is at a temperature of up to a maximum of between 200 and 500° C.7. Method according to wherein the step iiia. contacting the ...

Connecting element for a tubular component overlaid with a metallic composite deposit and method of obtaining such element

A connecting element for a tubular component, the connecting element being overlaid with a coating including a principal layer constituted by a nickel-phosphorus alloy, a tubular component including one or more such connecting elements, and a method for producing such a connecting element.

Method for manufacturing product with bright surface

A method of manufacturing a bright surface product comprises a step of performing electroless plating to form a first metal film on a base coat layer formed on a substrate, a step of performing electrolytic plating to form a second metal film thereon so that the bonding strength between each film of a multi-layered metal film comprising the first metal film and the second film is higher than the bonding strength between the base coat layer and the first metal layer, a step of integrally and discontinuously segmentalizing the multi-layered metal film with cracks to form an island-like metal film comprising a collection of fine multi-layered metal regions with island-like structures; and a step of forming a translucent top coat layer to cover the fine multi-layered metal regions of the island-like metal film and enter into the cracks to make contact with the base coat layer. 18-. (canceled)9. A method of manufacturing a bright surface product as an automotive part having stress resistance against collisional external force , the method comprising:a first step of performing electroless plating to form a first metal film on a substrate or a base coat layer deposited on the substrate;a second step of performing electrolytic plating to form at least a second metal film on the first metal film so that the bonding strength between each film of a multi-layered metal film comprising at least the first metal film and the second film is higher than the bonding strength between the substrate or the base coat layer and the first metal layer;a third step of integrally and discontinuously segmentalizing the multi-layered metal film with cracks at the same place by utilizing the difference in internal stress between the substrate and the multi-layered metal film to form an island-like metal film comprising a collection of fine multi-layered metal regions with island-like structures and having an appearance of an integrated bright surface; anda fourth step of forming a translucent ...

Revised Nucleated Plating

Better bonding of the plating materials, thru the elimination of the diffusion zone. 1. Until our finding thru Revised Nucleated Plating the diffusion zone was known to cause delamination of dissimilar metals that were bonded together to rebuild parts toward enhanced wear factors and cost savings. In the business of metal plating, relating to the rebuilding of bearing components, many techniques have come and gone. Any of these processes can be used with our nucleated plating. We enhance whatever you do for your application.We've discovered that by adjustment in the pre and post bake process, we can eliminate the diffusion zone, thereby enhancing the bonding of the rebuild. Do to the various properties of all the metals used in commercial, military and aerospace applications the numbers vary drastically. Although our process is unique in end of itself, testing would be endless. The proper numbers for the pre and post bake process can only be determined when both metals are known.For the purpose of this specification dialogue we can say 300° to 500° on the prebake and 550° −800° post bake.In the realm of rebuilding bearing surface for high speed applications, i.e. jet turbines, the industry has admitted to an inordinate amount of plating failures. These failures can and have led to catastrophic failures.Our process, Revised Nucleated Plating, eliminates the diffusion zone that can cause this failure.With the “Revised Nucleated Plating” process eliminating the diffusion zone, we have also created an environment by which you have enhanced bonding and an ability for minor flex and better ability to handle shock impacts on bearings and after more discussion we began looking at the process by which the plating takes place.With all of the variables conspiring to derail the plating process, i.e. impurities in the 2 metals, dirty air in the plating room where the process is being done, dirty or worn out chemicals, not to mention the attitude of the operator, impurities that ...

Additively manufactured article and method of coating same

A method can include coating a first surface of an additively manufactured article made of a base material with a coating material comprising at least two constituents, wherein a first constituent of the at least two constituents is configured to be at least partially transient liquid phase (TLP) diffused from the coating material into the base material at a first constituent diffusion temperature, and a second constituent of the at least two constituents is configured to not diffuse from the coating material at the first constituent diffusion temperature, heating the additively manufactured article to the first constituent diffusion temperature, TLP diffusing at least a portion of the first constituent from the coating and into the base material, leaving the second constituent of the coating material on the first surface, and forming a second surface that is smoother than the first surface.

Method for depositing metal oxide film in liquid environment

A method for depositing a metal oxide film in a liquid environment is provided, and includes steps of: dissolving an oxidizing agent in solvent with hydrogen bond to form a solution, and placing a substrate into the solution for performing a deposition reaction to deposit a metal oxide hydroxide film on the substrate. The oxidizing agent is potassium permanganate, potassium chromate, or potassium dichromate, a reaction temperature of the deposition reaction ranges from 1 to 99 degrees Celsius, and a reaction pressure environment of the deposition reaction is an atmospheric pressure environment.

THERMAL SPRAYING OF CERAMIC MATERIALS

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon. 1. A composition comprising metal or metal alloy coated particles comprising:(i) 50-95 wt % of an inner core of silicon carbide, silicon nitride, boron carbide or boron nitride; and(ii) 5-50 wt % of an outer layer of a metal or metal alloy.2. A composition as claimed in wherein the metal or metal alloy is a 1row transition metal or 1row transition metal alloy optionally with B or Si.3. A composition as claimed in wherein the outer coating (ii) of said particles is selected from the group consisting of: Ni claim 1 , NiCo claim 1 , NiCr claim 1 , NiSi claim 1 , FeSi claim 1 , CoSi claim 1 , NiTiCr claim 1 , NiTiCrBSi claim 1 , NiB claim 1 , Co claim 1 , CoCr claim 1 , Fe claim 1 , and FeCr.4. A composition as claimed in wherein the particles are agglomerated.5. A composition as claimed in 4 wherein the metal or metal alloy coated particles are agglomerated and have an average particle size in the range of 10-100 μm.6. A composition as claimed in wherein the average thickness of the metal layer on said particles is in the range of to 500 nm.7. A composition as claimed in wherein the inner ore is silicon carbide claim 1 , silicon nitride or boron carbide.8. A process comprising:(i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer;{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(ii) agglomerating the particles of step (i), e.g. to obtain the particles of ;'}(iii) thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.9. A process as claimed in wherein the agglomeration occurs via spray drying.10. A process for the production ...

Large scale manufacturing of hybrid nanostructured textile sensors

A process for the large-scale manufacturing vertically standing hybrid nanometer scale structures of different geometries including fractal architecture of nanostructure within a nano/micro structures made of flexible materials, on a flexible substrate including textiles is disclosed. The structures increase the surface area of the substrate. The structures maybe coated with materials that are sensitive to various physical parameters or chemicals such as but not limited to humidity, pressure, atmospheric pressure, and electromagnetic signals originating from biological or non-biological sources, volatile gases and pH. The increased surface area achieved through the disclosed process is intended to improve the sensitivity of the sensors formed by coating of the structure and substrate with a material which can be used to sense physical parameters and chemicals as listed previously. An embodiment with the structures on a textile substrate coated with a conductive, malleable and bio-compatible sensing material for use as a biopotential measurement electrode is provided.

METALLIZED COMPONENTS AND SURGICAL INSTRUMENTS

A surgical instrument and related methods are described. The surgical instrument includes a first jaw including a first structural jaw element and a first sealplate fixed to the first structural jaw element and a second jaw including a second structural jaw element and a second sealplate fixed to the second structural jaw element. The second structural jaw element is moveably coupled to the first structural jaw element to facilitate pinching tissue between the first and second sealplates. The first and second sealplates are configured to facilitate sealing tissue pinched therebetween. The first jaw further includes a metallized tie layer between the first sealplate and the first structural jaw element, wherein the first sealplate is fixed to the first structural jaw element via a metal to metal joint between the first sealplate and the metallized tie layer. 110-. (canceled)11. A method of manufacture comprising:forming a metallized tie layer on a surface of a nonmetallic component;positioning the surface of the nonmetallic component to mate with a metallic surface of a second component; andjoining the metallized tie layer with the mated metallic surface of the second component using metal to metal joining techniques.12. The method of claim 11 , wherein the nonmetallic component is one of a group consisting of:a polymeric component;a ceramic component;a ceramic-polymer composite component;a resin plastic injection molded component;an undoped silicon component;a glass component; andan alumina-filled epoxy component.13. The method of claim 11 , wherein the metal to metal joining techniques include compression fusion welding.14. The method of claim 13 , wherein the surfaces of the nonmetallic component and the metallic surface of the second component are gold plated claim 13 , wherein the compression fusion welding is made by contacting the two gold plated surfaces and applying an energy source.15. The method of claim 14 , wherein the energy source is ultrasonic or ...

Novel adhesion promoting agents for metallisation of substrate surfaces

A method is provided for metallisation of non-conductive substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies a novel combination of a metal oxide compound to promote adhesion and a transition metal plating catalyst compound promoting the metal layer formation.

SEMICONDUCTOR DEVICE, PLATING METHOD, PLATING SYSTEM AND RECORDING MEDIUM

Adhesivity between a catalyst adsorption layer on a substrate and a barrier metal plating layer can be improved. The catalyst adsorption layer containing a catalyst metal is formed on the substrate by supplying a catalyst solution onto the substrate , and a bonding metal layer A containing a bonding metal different from the catalyst metal is formed on the catalyst adsorption layer by performing a plating process with the catalyst metal as a catalyst. A barrier metal plating layer is formed on the bonding metal layer A by performing a plating process with the bonding metal as a catalyst. 1. A semiconductor device , comprising:a substrate;a catalyst adsorption layer, formed on the substrate, containing a catalyst metal adsorbed onto the substrate;a bonding metal layer which is formed on the catalyst adsorption layer by performing a plating process with the catalyst metal as a catalyst and contains a bonding metal different from the catalyst metal; anda barrier metal plating layer formed on the bonding metal layer by performing a plating process with the bonding metal as a catalyst.2. The semiconductor device of claim 1 ,wherein the catalyst metal of the catalyst adsorption layer contains n-Pd or palladium chloride.3. The semiconductor device of claim 1 ,wherein the bonding metal of the bonding metal layer contains Ni or a Ni alloy.4. The semiconductor device of claim 1 ,wherein the barrier metal plating layer contains Co or a Co alloy.5. The semiconductor device of claim 1 ,wherein a thickness of the bonding metal layer is smaller than a thickness of the barrier metal plating layer.6. The semiconductor device of claim 1 ,wherein the barrier metal plating layer has a monolayer structure.7. A plating method of performing a plating process on a substrate claim 1 , comprising:preparing the substrate;forming a catalyst adsorption layer on the substrate by supplying a catalyst solution containing a catalyst metal onto the substrate;forming a bonding metal layer on the ...

Method for coating steel sheets or steel strips and method for producing press-hardened components therefrom

The invention relates to a method for coating a steel sheet or steel strip to which an aluminium-based coating is applied in a dip-coating process and the surface of the coating is freed of a naturally occurring aluminium oxide layer. In order to provide a low-cost method for coating steel sheets or steel strips that makes the steel sheets or steel strips outstandingly suitable for the production of components by means of press hardening and for the further processing thereof, it is proposed that transition metals or transition metal compounds are subsequently deposited on the freed surface of the coating to form a top layer. The invention also relates to a method for producing press-hardened components from the aforementioned steel sheets or steel strips with an aluminium-based coating.

Method for manufacturing surge absorbing device

The present disclosure provides a method for manufacturing a surge absorbing device, the method comprising: providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.

Catalyst for solid polymer fuel cell and method for selecting catalyst for solid polymer fuel cell

The present invention relates to a catalyst for solid polymer fuel cells in which catalyst particles containing Pt as an essential catalyst metal are supported on a carbon powder carrier. The catalyst has good initial activity and good durability. When the catalyst is analyzed by X-ray photoelectron spectroscopy after potential holding at 1.2 V (vs. RHE) for 10 minutes in a perchloric acid solution, a ratio of zero-valent Pt to total Pt is 75% or more and 95% or less. The present inventive catalyst metal is preferably one obtained by alloying Pt with one of Co, Ni and Fe, and further with one of Mn, Ti, Zr and Sn. In addition, it is preferable that a fluorine compound having a C—F bond is supported on at least the surfaces of catalyst particles in an amount of 3 to 20 mass % based on the total mass of the catalyst.

Silver Coated Copper Flakes and Methods of Their Manufacture

Compositions having copper flakes coated with silver, where the silver is present as a hermetically closed metal shell around the copper, are described. The hermetically closed metal shell can limit oxidation of copper for at least 365 days at a temperature of less than 100° C. The composition can also contain palladium in an amount of about 1% or less by weight of silver in the shell. Palladium limits the migration of copper from the core flakes to the silver shell at temperatures below 250° C. Methods of manufacturing copper flakes coated can include the steps of treating copper flakes with an acid to form acid treated copper flakes, treating the acid treated copper flakes with a polyamine to form polyamine treated copper flakes, depositing silver on the polyamine treated copper flakes to form copper flakes comprising silver deposits, and depositing silver onto the copper flakes comprising silver deposits.

MULTILAYERED COATING FOR DOWNHOLE TOOLS WITH ENHANCED WEAR RESISTANCE AND ACIDIC CORROSION RESISTANCE

A coating for protecting a base material from wear and corrosion includes a first layer deposited directly onto an outer surface of the base material. In addition, the coating includes a second layer deposited directly onto the first layer. The first layer is positioned between the base material and the second layer. The first layer includes chromium having a first micro-crack density and the second layer comprises chromium having a second micro-crack density that is less than the first micro-crack density. 1. A coating for protecting a base material from wear and corrosion , the coating comprising:a first layer deposited directly onto an outer surface of the base material; anda second layer deposited directly onto the first layer, wherein the first layer is positioned between the base material and the second layer;wherein the first layer a comprises a first micro-crack density and the second layer comprises a second micro-crack density, wherein the first micro-crack density is greater than 1000 micro-cracks per inch, and the second micro-crack density is between 400 and 650 micro-cracks per inch;wherein the first layer or the second layer comprises chromium.2. The coating of claim 1 , wherein the first layer has a first thickness measured perpendicular to the outer surface of the base material and the second layer has a second thickness measured perpendicular to the outer surface of the base material;wherein the first thickness of the first layer is substantially uniform and the second thickness of the second layer is substantially uniform.3. The coating of claim 2 , wherein the second thickness of the second layer is less than 0.0050 in.4. The coating of claim 2 , wherein the second thickness of the second layer is between about 0.00050 in. and about 0.0020 in.5. The coating of claim 2 , wherein the first layer has a first hardness greater than 1000 HV and the second layer has a second hardness of about 850 HV.6. The coating of claim 5 , wherein the coating has an ...

Electrochemical process for the preparation of lead foam

The present invention provides a methodology of making lead foam by an electrochemical process in which non-conducting poly urethane foam was metalized using palladium chloride solution which was then coated with lead using the plating bath containing fluoboric acid, Lead as fluoborate solutions, boric acid and urea. The process was operated at a current density ranging from 0.5 A/dm 2 to 5 A/dm 2 , bath pH from 0.5 to 2.0, at temperature range from 30° C. to 50° C., followed with suitable post plating treatments. The surface morphology of the lead foam thus obtained was studied. The composition and purity of the lead foam was characterized with XRD. The porosity obtained depends upon the rate of deposition. The average value of the porosity realized in the range 86-79% with respect to time of deposition 2-6 h and the corresponding thickness of 45 to 60 micron.

Copper metallization for through-glass vias on thin glass

A method for metallizing through-glass vias in a glass substrate includes functionalizing a surface of the glass substrate with a silane. The glass substrate has an average thickness t and comprises a plurality of vias extending through the thickness t. The method further includes applying an electroless plating solution comprising a copper ion to deposit a copper seed layer on the functionalized surface, disposing an electrolyte within the plurality of vias, wherein the electrolyte comprises copper ions to be deposited on the copper seed layer within the plurality of vias; positioning an electrode within the electrolyte; and applying a current between the electrode and the glass substrate, thereby reducing the copper ions into copper within the plurality of vias such that each of the plurality of vias is filled with copper and the copper has a void volume fraction of less than 5%.

METHOD OF MAKING A SUPPORTED GAS SEPARATION MEMBRANE

Methods for preparing a gas separation membrane system can include depositing a gas-selective membrane layer upon a surface of a tubular porous support, annealing the gas-selective membrane layer to form an annealed gas-selective membrane layer, polishing the annealed gas-selective membrane layer under a controlled polishing condition to form an abraded membrane surface, depositing another gas-selective membrane layer upon the abraded membrane surface of the tubular porous support, and successively iterating the annealing, polishing and depositing operations until a leak-tight membrane system is formed. The controlled polishing condition comprises utilizing a rotary fibrous buff that includes a plurality of abrasive particles adhered to a fibrous support with a polymeric binder. 1. A method comprising:(a) depositing a film of a gas-selective material upon a surface of a tubular porous support, thereby providing the tubular porous support with a gas-selective base membrane layer;(b) annealing the gas-selective base membrane layer, thereby forming a first annealed gas-selective membrane layer;(c) forming a first abraded membrane surface by polishing the first annealed gas-selective membrane layer under a first controlled polishing condition with an abrading medium comprising a rotary fibrous buff that includes a plurality of abrasive particles adhered to a fibrous support with a polymeric binder, and(d) depositing a film of the gas-selective material upon the first abraded membrane surface, thereby forming a first overlaid membrane layer.2. The method of claim 1 , further comprising:(e) annealing the first overlaid membrane layer, thereby forming a second annealed gas-selective membrane layer;(f) forming a second abraded membrane surface by polishing the second annealed gas-selective membrane layer under a second controlled polishing condition with an abrading medium comprising a rotary fibrous buff that includes a plurality of abrasive particles adhered to a fibrous ...

METHOD OF MAKING A SUPPORTED GAS SEPARATION MEMBRANE

Presented is a method for preparing a gas separation membrane system. This method involves depositing a membrane layer of gas-selective metal upon a tubular porous support followed by annealing the resulting layer of gas-selective metal. The resulting annealed membrane layer of gas-selective material is polished under a controlled polishing condition with an abrading medium that includes a structured abrasive article comprising a backing having bonded thereto an abrasive layer comprising a plurality of shaped abrasive composites that comprise abrasive grains dispersed in a polymeric binder. Another layer of gas-selective metal is then deposited upon the tubular porous support. The cycle of annealing, polishing and depositing is repeated through one or more cycles until a leak-tight membrane system is provided. 1. A method for preparing a gas separation membrane system , wherein said method comprises:(a) depositing a layer of gas-selective material upon a surface of a tubular porous support to thereby provide said tubular porous support having a gas-selective membrane layer;(b) annealing said gas-selective membrane layer to provide a first annealed gas-selective membrane layer;(c) providing a first abraded membrane surface by polishing said first annealed gas-selective membrane layer under a first controlled polishing condition with an abrading medium that includes a structured abrasive article comprising a backing having bonded thereto an abrasive layer comprising a plurality of shaped abrasive composites that comprise abrasive grains dispersed in a polymeric binder; and(d) placing a second layer of gas-selective material upon said first abraded membrane surface to provide a first overlaid membrane layer.2. A method as recited in claim 1 , further comprising:(e) annealing said first overlaid membrane layer to provide a second annealed gas-selective membrane layer;(f) providing a second abraded membrane surface by polishing said second annealed gas-selective membrane ...

ADDITIVELY MANUFACTURED HIGH TEMPERATURE OBJECTS

Method for producing an object by additively manufacturing a preform of the object from a building material comprising a polymer. The preform is encapsulated with a metal or metal alloy encapsulant that is capable of withstanding temperatures greater than the preform. The encapsulated preform is heated at a predetermined temperature and for a period of time, such that the preform at least partially transmutes into the form of a carbonaceous solid. 1. A method of producing a three-dimensional object , comprising the steps of:additively manufacturing a preform of an object from a building material comprising a polymer;encapsulating the preform with a metal or metal alloy encapsulant that is capable of withstanding temperatures greater than the preform;heating the preform at a predetermined temperature and for a period of time, such that the preform at least partially transmutes into the form of a carbonaceous solid residue.2. The method of claim 1 , wherein the encapsulating step is performed after the heating step.3. The method of claim 1 , wherein the encapsulating step is performed before the heating step.4. The method of claim 3 , further comprising the step of maintaining the preform within an inert gas environment during the heating.5. The method of claim 4 , the step of additively manufacturing the preform of the object from the building material comprises the following steps:applying a layer of the building material on a bed or on a previously applied layer of the building material in a powder form;solidifying select points of the layer of the building material by a heat energy introduced by electromagnetic radiation or particle radiation according to a cross-section pattern assigned to layer so that the building material at the select points is solidified by the radiation;wherein the applying step and the solidifying step are successively repeated until all cross sections of the preform of the object are solidified.6. The method of claim 5 , wherein the ...

Method for preventing corrosion and component obtained by means of such

A method for preventing corrosion in a component of a turbo-machine having a metal substrate made of carbon steel, low alloy steel and stainless steel includes: a first deposition step of depositing a first metallic layer on the substrate by electroplating; a second deposition step of depositing at least a second layer of a nickel alloy on the first layer by electroless plating; at least one thermal treatment step after the deposition steps, said thermal treatment being applied at a temperature and for a time depending on the overall thickness of the layers, the value of said temperature being directly proportional to the thickness, the value of said time being inversely proportional to the temperature.

HIGH-TEMPERATURE LONG LIFESPAN ELECTRODE FOR ELECTRIC DUAL LAYER CAPACITOR AND METHOD OF MANUFACTURING THE SAME

A high-temperature long lifespan electrode includes a through type aluminum sheet, a plurality of first hollow protrusion members protruded to one side of the through type aluminum sheet, a plurality of second hollow protrusion members protruded to the other side of the through type aluminum sheet, a metal protection layer coated on the through type aluminum sheet, the plurality of first hollow protrusion members, a first active material sheet bonded to one surface of the through type aluminum sheet, and a second active material sheet bonded to the other surface of the second surface of the through type aluminum sheet.

Spin-On Metallization

Described herein are the depositions of conductive metallic films on a surface which contains topography. The deposition uses a metallic precursor comprises a neutral (uncharged) metal compound in which the metal atom is in the zerovalent state and stabilized by ligands which are stable as uncharged, volatile species. 1. A method to deposit a conductive metallic film onto a substrate comprising:a. providing the substrate with a surface containing topography; [ the metal is selected from the group consisting of Fe, Co, Ni, Ru, Ir, Rh, Pd, Pt, Cu, Ag, Au, Os, and combinations thereof;', 'the at least one neutral stabilizing ligand is selected from the group consisting of', {'sub': 2', '2', '2', '2', '4', '4', '18', '4', '18', '6', '18', '8', '18', '1', '12', '1', '12', '1', '12', '1', '12', '1', '12', '1', '2', '1', '2', '1', '12, 'carbon monoxide (CO); nitric oxide (NO); dinitrogen (N); acetylene (CH); ethylene (CH); C-Cdiene or C-Ccyclic diene; C-Ctriene; C-Ctetraene; organo isocyanide RNC, wherein R is selected from the group consisting of Cto Clinear or branched hydrocarbyl or halocarbyl radical; organic nitrile RCN wherein R is selected from the group consisting of Cto Chydrocarbyl or halocarbyl radical; organophosphine PR′3 wherein R′ is selected from the group consisting of H, Cl, F, Br, and a Cto Chydrocarbyl or halocarbyl radical; amine NRaRbRc, wherein Ra, Rb and Rc may be connected to each other and each is independently selected from H or a Cto Chydrocarbyl or halocarbyl radical; organic ether R*OR**, wherein R* and R** can be connected to each other and each is selected independently from Cto Chydrocarbyl or halocarbyl radicals; and terminal or internal alkyne with general formula RCCR, where Rand Rcan be independently selected from the group consisting of H, Cto Clinear, branched, cyclic or aromatic halocarbyl or hydrocarbyl radical, silyl or organosilyl radical, stannyl or organostannyl radical, and combinations thereof;'}, 'the neutral (uncharged) ...

Method for Producing Chromium-Containing Multilayer Coating and a Coated Object

To produce a chromium-containing multilayer coating on an object, alternate layers of nickel phosphorus alloy and trivalent chromium are deposited on the object until a desired thickness of coating has been reached. The coated object is then subjected to one or more heat treatments to improve the mechanical and physical properties of the coating and to produce multiphase layers comprising layers containing crystalline Ni and crystalline NiP and layers containing crystalline Cr. 1. A method for producing a chromium-containing multilayer coating on an object , comprising the steps of:depositing a layer of nickel-phosphorus alloy (NiP) on the object;electroplating a layer of trivalent chromium on the object;repeating said steps one or more times in order to produce a multilayer coating containing two or more alternate layers of nickel-phosphorus alloy and chromium; and{'sub': '3', 'subjecting the coated object to one or more heat treatments to amend the mechanical and physical properties of the coating and to produce multiphase layers containing crystalline Ni and crystalline NiP and multiphase layers containing crystalline Cr.'}2. A method according to claim 1 , wherein at least one of the chromium layers is deposited next to a NiP layer and during the heat treatment at least one multiphase layer is produced that contains crystalline CrNi.3. A method according to claim 1 , wherein at least one intermediate layer is deposited on the object between the layers of NiP and Cr claim 1 , the intermediate layer consisting of a metal or metal alloy other than NiP or Cr.4. A method according to claim 3 , wherein the intermediate layer consists of nickel claim 3 , copper or molybdenum claim 3 , or an alloy containing any of them.5. A method according to claim 4 , wherein a strike layer is deposited between the chromium layer and the NiP layer.6. A method according to claim 5 , wherein the strike layer consists of sulphamate nickel claim 5 , bright nickel claim 5 , titanium claim ...

High resistivity soft magnetic material for miniaturized power converter

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

LOW-ALLOY AND CORROSION-RESISTANT STEEL FOR VEHICLE, HAVING IMPROVED CORROSION RESISTANCE UNDER CORROSIVE ENVIRONMENT, AND PREPARATION METHOD THEREOF

A low-alloy and corrosion-resistant steel for a vehicle, may include about 0.001 wt % to about 0.1 wt % of C, about 0.01 wt % to about 0.5 wt % of Si, about 0.1 wt % to about 0.6 wt % of Mn, more than 0 wt % and about 0.18 wt % or less of P, more than 0 wt % and less than about 0.02 wt % of S, about 0.001 wt % to about 0.03 wt % of Nb, more than 0 wt % and about 0.03 wt % or less of Cr, about 0.05 wt % to about 0.3 wt % of Cu, about 0.05 wt % to about 0.2 wt % of Ni, and more than 0 wt % and about 0.2 wt % or less of a combined weight of Sn and Sb, and the balance iron and inevitable impurities. 1. A low-alloy and corrosion-resistant steel for a vehicle , comprising:about 0.001 wt % to about 0.1 wt % of C, about 0.01 wt % to about 0.5 wt % of Si, about 0.1 wt % to about 0.6 wt % of Mn, more than 0 wt % and about 0.18 wt % or less of P, more than 0 wt % and less than about 0.02 wt % of S, about 0.001 wt % to about 0.03 wt % of Nb, more than 0 wt % and about 0.03 wt % or less of Cr, about 0.05 wt % to about 0.3 wt % of Cu, about 0.05 wt % to about 0.2 wt % of Ni, and more than 0 wt % and about 0.2 wt % or less of a combined weight of Sn and Sb, and the balance iron and inevitable impurities.2. The low-alloy and corrosion-resistant steel of claim 1 , wherein the low-alloy and corrosion-resistant steel has a tensile strength of about 350 MPa to about 450 MPa.3. The low-alloy and corrosion-resistant steel of claim 1 , wherein the low-alloy and corrosion-resistant steel has a yield point of about 200 MPa to about 400 MPa.4. The low-alloy and corrosion-resistant steel of claim 1 , wherein the low-alloy and corrosion-resistant steel has an elongation of about 30% to about 45%.5. The low-alloy and corrosion-resistant steel of claim 1 , wherein a microstructure of the low-alloy and corrosion-resistant steel is ferrite.6. The low-alloy and corrosion-resistant steel of claim 1 , wherein the low-alloy and corrosion-resistant steel is plated with a plating raw material.7. The low ...

SEMICONDUCTOR PROCESSING STATION

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber. 1. A semiconductor processing station comprising:a first chamber; [ a first segment, disposed along a sidewall of the second chamber; and', 'a second segment, disposed perpendicular to the first segment and located above a wafer carrier in the second chamber, wherein an end of the second segment is connected to an end of the first segment; and, 'a cooling pipe, disposed inside the second chamber, and the cooling pipe comprising, 'an external pipe, connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior of the second chamber to an interior of the second chamber, wherein the fluid is discharged towards the wafer carrier through the first segment; and, 'a second chamber, comprisinga cooling stage, wherein the first chamber is surrounded by the second chamber and the cooling stage, and the first chamber communicates between the cooling stage and the second chamber.2. The semiconductor processing station as claimed in claim 1 , wherein the first segment comprises a plurality of purge nozzles evenly ...

TEXTURING AND PLATING NICKEL ON ALUMINUM PROCESS CHAMBER COMPONENTS

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing. 1. A method of coating a showerhead , the method comprising:removing aluminum oxide from the showerhead, wherein removing the aluminum oxide exposes aluminum portions of the showerhead and wherein the showerhead comprises through-holes extending from a top of the showerhead to a bottom of the showerhead;electrochemically anchoring the aluminum portions of the showerhead by exposing the showerhead to an electrochemically anchoring chemical; andforming a nickel layer on the aluminum portions.2. The method of claim 1 , wherein the electrochemically anchoring chemical comprises at least one of hydrochloric acid claim 1 , sulfuric acid claim 1 , oxalic acid claim 1 , propionic acid claim 1 , succinic acid claim 1 , glycolic acid claim 1 , or an organic acid.3. The method of claim 1 , wherein exposing the showerhead to the electrochemically anchoring chemical comprises submerging the showerhead in a liquid bath.4. The method of claim 3 , wherein a temperature of the liquid bath is between −20° C. and 120° C.5. The method of claim 1 , wherein the nickel layer consists of nickel or consists of nickel and phosphorus.6. The method of claim 1 , further comprising forming an adhesion layer after electrochemically anchoring the aluminum portions and before forming the nickel layer.7. The ...

METHOD FOR PRODUCING A CHROMIUM COATING ON A METAL SUBSTRATE

A method for producing a trivalent chromium based coating on a metal substrate, a layer of nickel phosphorus alloy is deposited on a metal substrate and a trivalent chromium layer is electroplated on the Ni—P layer. The coated metal substrate is subjected to one or more heat treatments to harden the coating and to produce multiphase layers including at least one layer containing crystalline Ni and crystalline NiP, and at least one layer containing crystalline Cr and crystalline CrNi. By using this method it is possible to produce coatings having a Vickers microhardness value higher than 2000 HV. 1. A method for producing a trivalent chromium based coating on a metal substrate , comprising the steps of:depositing a layer of nickel phosphorus alloy on a metal substrate;electroplating a chromium layer from a trivalent chromium bath on the layer of Ni—P; and{'sub': '3', 'subjecting the coated metal substrate to one or more heat treatments to harden the coating and to produce multiphase layers including at least one layer containing crystalline Ni and crystalline NiP and at least one layer containing crystalline Cr and crystalline CrNi.'}2. The method according to claim 1 , further comprising the step of electroplating a nickel under-layer on the metal substrate before the step of depositing the Ni—P layer.3. The method according to claim 1 , further comprising the step of electroplating an intermediate layer of nickel between the Ni—P layer and the Cr layer.4. The method according to claim 1 , comprising two or more heat treatments of the coated metal substrate.5. The method according to claim 1 , wherein the Ni—P layer is deposited on the metal substrate by electroless plating or electroplating.6. The method according to claim 1 , wherein the phosphorus content of the Ni—P alloy is in the range of 3-12% claim 1 , preferably 5-9%.7. The method according to claim 1 , wherein the thickness of the Ni—P layer is 1-50 μm claim 1 , preferably 3-30 μm.8. The method according ...

FILM-FORMING STRUCTURE ON WORK AND FILM-FORMING METHOD ON WORK

A film-forming structure and a film-forming method on a work include closely depositing a thin primary film on a work, the primary film being a suboxide or an oxide including metal and is soft and has insulation properties and corrosion resistance. The primary film is porous film. The work is integrated with the primary film to prevent the primary film from peeling, and thereby improving the workability. The thin secondary film such as a coating is attached to the primary film closely, thereby reducing the amount of paint used. The primary film is integrated with the secondary film to prevent the secondary film from peeling, improving the workability after formation of the secondary film, and thereby forming the primary and secondary films rationally. 1. A film-forming structure on a work comprising:a work having a surface on which a film is formed; anda thin primary film formed by a suboxide or an oxide comprising metal, deposited on the surface of the work, and wherein the primary film is a porous film.2. The film-forming structure on the work according to claim 1 , further comprising an impregnation layer formed by the primary film on the surface of the work.3. The film-forming structure on the work according to claim 1 , wherein the primary film has a surface having minute irregularities.4. The film-forming structure on the work according to claim 1 , wherein the suboxide is a chromium suboxide claim 1 , and the oxide is a chromium oxide.5. The film-forming structure on the work according to claim 1 , wherein the primary film is softer than metal chromium and has insulation properties and corrosion resistance.6. The film-forming structure on the work according to claim 3 , further comprising a thin secondary film formed on the surface with the irregularities of the primary film.7. The film-forming structure on the work according to claim 6 , further comprising an impregnation layer formed by the secondary film on a surface layer of the primary film.8. The film- ...

15993351

Provided herein is a method to printed electronics, and more particularly related to printed electronics on flexible, porous substrates. The method includes applying a coating compound comprising poly (4-vinylpyridine) (P4VP) and SU-8 dissolved in an organic alcohol solution to one or more surface of a flexible, porous substrate, curing the porous substrate at a temperature of at least 130° C. such that the porous substrate is coated with a layer of said coating compound, printing a jet of a transition metal salt catalyst solution onto one or more printing sides of the flexible, porous substrate to deposit a transition metal salt catalyst onto the one or more printing sides, and submerging the substrate in an electroless metal deposition solution to deposit the metal on the flexible, porous substrate, wherein the deposited metal induces the formation of one or more three-dimensional metal-fiber conductive structures within the flexible, porous substrate. 1. A method of fabricating metal-fiber conductive structures on a flexible , porous substrate , the method comprising the steps of:(i) applying a coating compound comprising poly (4-vinylpyridine) (P4VP) and SU-8 dissolved in an organic alcohol solution to one or more surface of the flexible, porous substrate;(ii) curing the porous substrate at a temperature of at least 130° C. such that the flexible, porous substrate is coated with a layer of said coating compound;(iii) printing a jet of a transition metal salt catalyst solution onto one or more printing sides of the flexible, porous substrate to deposit a transition metal salt catalyst onto the one or more printing sides;(iv) submerging the substrate in an electroless metal deposition solution to deposit the metal on the flexible, porous substrate, wherein the deposited metal induces the formation of one or more three-dimensional metal-fiber conductive structures within the flexible, porous substrate.2. The method according to claim 1 , wherein the step of curing ...

COATING FOR INTERNAL SURFACES OF AN AIRFOIL AND METHOD OF MANUFACTURE THEREOF

Disclosed herein is a method of coating, comprising providing an article having an internal passage therein to be coated; electrolytically applying a first layer that comprises chromium or a chromium alloy onto a surface of the internal passage; electrolytically applying a second layer comprising aluminum or an aluminum alloy onto the first layer; and heat treating the article to promote interdiffusion between the first layer and the second layer. 1. An airfoil comprising: a thermally grown oxide layer that comprises alumina and chromium oxide; and', 'a layer comprising Ni—Cr/aluminide or Cr/aluminide disposed between the layer comprising alumina and chromium oxide and the internal surface of the airfoil., 'an internal surface having disposed thereon2. The airfoil of claim 1 , where the layer comprising Ni—Cr/aluminide or Cr/aluminide contains aluminum and chromium that vary in amount inversely with one another with distance from the internal surface of the airfoil or from a surface of the thermally grown oxide layer.3. The airfoil of claim 1 , where the thermally grown oxide layer has a thickness of 2 to 7 micrometers.4. The airfoil of claim 1 , where the layer comprising Ni—Cr/aluminide or Cr/aluminide has a thickness of 50 to 100 micrometers.5. The airfoil of claim 1 , where the layer comprising Ni—Cr/aluminide or Cr/aluminide is obtained by thermally treating:a first layer comprising chromium or nickel-chromium that is disposed on the internal surface of the airfoil; anda second layer that contains aluminum or an aluminum alloy that is disposed on the first layer.6. The airfoil of claim 1 , where the first layer and the second layer are deposited electrolytically.7. The airfoil of claim 1 , prepared by a method comprising:providing the article to be coated; wherein the article comprises a convoluted internal passage;electrolytically applying a first layer that comprises chromium or a chromium alloy onto a surface of the internal passage;electrolytically applying ...

NICKEL ALLOY PLATING

A nickel-boron coating deposited on a substrate which comprises nickel, boron and a material selected from bismuth, tin, tellurium, selenium, indium and gallium. 114-. (canceled)15. A method of depositing a nickel-boron coating comprising at least 75% wt nickel , wherein the method comprises contacting the substrate with a coating solution having a pH of at least 11 comprising:a source of nickel ions;a reducing agent comprising a source of boron ions;a complexing agent; anda stabilizer agent comprising a source of ions selected from bismuth ions, tin ions, tellurium ions, selenium ions, indium ions and gallium ions.16. The method of claim 15 , wherein the substrate comprises steel.17. The method of claim 15 , wherein the deposition speed of the nickel-boron coating on the substrate is at least 10 μm/h.18. The method of claim 15 , wherein the coating solution is lead-free and thallium-free.19. The method of claim 15 , wherein the coating solution is phosphorus-free.20. The method of claim 15 , wherein the coating solution has one or more of the following features (a) through (d):(a) a concentration of the complexing agent in the range 50 to 70 g/l;(b) a concentration of the reducing agent in the range 0.25 to 1 g/l;(c) a concentration of the nickel ions from the source of nickel ions in the range 20 to 30 g/l;(d) a concentration of the stabilizer agent in the range 10 to 25 mg/l.21. The method of claim 15 , comprising preparing the coating solution by:providing an alkaline solution comprising the source of nickel ions, the complexing agent and the stabilizer;adding the reducing agent to the alkaline solution to form the coating solution.22. The method of claim 15 , further comprising heat treating the nickel-boron coating after its deposition.23. The method of claim 22 , wherein the heat treating comprises a heat treatment which lasts at least 30 minutes at a temperature of at least the crystallisation temperature of the nickel-boron coating.24. The method of claim ...

Fabrication of semiconductor interconnect structure

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

Chip interconnect and packaging deposition methods and structures

The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

Chip interconnect and packaging deposition methods and structures

The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

Fabrication of semiconductor interconnect structure

An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

Polyamideimide film with metal for circuit board and method for producing the same

Coating of turbine parts

Methods of fabricating solar-cell structures and resulting solar-cell structures

Embodiments of the invention relate to methods of fabricating solar-cell structures and resulting solar-cell structures. In one embodiment of a method of fabricating a solar-cell structure, a substrate including a front surface and an opposing back surface is provided. A porous-silicon layer may be electrochemically formed from a portion of the substrate that extends inwardly from the front surface. A portion of the porous-silicon layer may be electrochemically passivated. Metallic material may be plated to form at least a portion of each of a plurality of electrical contacts that are in electrical contact with the substrate. In a method according to another embodiment of the invention, the porous-silicon layer may used to getter impurities present in the substrate. In such an embodiment, the porous-silicon layer may be removed after gettering.

形成表面接枝体的方法，形成导电薄膜的方法，形成金属模的方法，形成多层线路板的方法，表面接枝材料和导电材料

本发明提供了一种形成接枝聚合物的方法，包括向含有聚酰亚胺的底物表面施加能量，所述聚酰亚胺其骨架中具有的聚合反应启动部分，在底物表面产生活性部位，并从该活性部位出发，产生直接与底物表面键合的拥有极性基团的接枝聚合物，从而获得一种表面接枝材料。本发明还提供了一种形成导电薄膜的方法，包括向含有聚酰亚胺的底物表面施加能量，所述聚酰亚胺的骨架中具有聚合反应启动部分，在底物表面产生活性部位，并从活性部位出发，产生拥有极性基团，直接与底物表面键合的接枝聚合物，使导电材料和接枝聚合物粘合，并由此获得一种导电材料。

Material for electroless plating, coating liquid for catalyst adhesion, electroless plating method, and plating method

본 발명은 촉매 부착성이 양호하고, 또한, 촉매 부착공정, 현상공정, 기타 공정에 있어서, 촉매 부착층이 비도전성 기재로부터 박리되거나 도금액에 용출되지 않고, 또한 도금층의 촉매 부착층과의 계면이 변색되는 경우가 없는 무전해 도금 형성재료를 제공하는 것을 과제로 한다. The present invention is based on the finding that the catalyst adherence is good and that the catalyst adherence layer is not peeled off from the non-conductive base material or eluted into the plating solution in the catalyst adhering step, the developing step, And an object of the present invention is to provide an electroless plating forming material which is not discolored. 상기 과제를 해결하기 위해 본 발명은, 비도전성 기재 상에 촉매 부착층을 갖는 무전해 도금 형성재료에 있어서, 상기 촉매 부착층이 비수용성 폴리에스테르 수지를 포함하고, 또한 상기 촉매 부착층 표면의 순수에 대한 접촉각이 60도 이하가 되도록 구성하는 것을 특징으로 한다. In order to solve the above problems, the present invention provides an electroless plating forming material having a catalyst adhering layer on a non-conductive substrate, wherein the catalyst adhering layer contains a water-insoluble polyester resin, Is 60 degrees or less.

Semiconductor wafer processing apparatus and processing method

본 발명은 반도체기판 위에 형성된 회로 패턴 홈 및/또는 구멍을 금속도금막으로 충전하고, 그 충전부분을 남기고 상기 금속도금막을 제거함으로써 회로배선을 형성하는 반도체기판처리장치 및 처리방법에 관한 것이다. 본 발명의 반도체기판처리장치는 표면에 회로가 형성된 반도체기판(W)을 건조상태에서 반출입하는 로드 언로드부(1)와, 반입된 반도체기판 위에 금속도금막을 형성하는 금속도금막 성막유닛(2)과, 반도체기판의 둘레 가장자리부를 에칭하는 베벨 에칭유닛(116)과, 상기 반도체기판 위의 그 금속도금막의 적어도 일부를 연마하는 연마유닛(10, 11)과, 반도체기판을 상기 유닛 사이에서 반송하는 로봇(3, 8)를 구비한다. The present invention relates to a semiconductor substrate processing apparatus and processing method for forming circuit wiring by filling a circuit pattern groove and / or hole formed on a semiconductor substrate with a metal plated film, and leaving the filling portion and removing the metal plated film. The semiconductor substrate processing apparatus of the present invention includes a rod unloading unit 1 for carrying in and out of a semiconductor substrate W having a circuit formed on its surface in a dry state, and a metal plating film forming unit 2 for forming a metal plating film on the loaded semiconductor substrate. And a bevel etching unit 116 for etching the peripheral edge of the semiconductor substrate, polishing units 10 and 11 for polishing at least a portion of the metal plated film on the semiconductor substrate, and a semiconductor substrate to be transported between the units. The robots 3 and 8 are provided.

Method for coating steel sheets or strips of steel and for producing press-hardened parts therefrom

본 발명은 알루미늄계 코팅이 용융 도금 공정에서 도포되고 코팅의 표면은 자연 발생 산화 알루미늄 층이 제거된 강판 또는 강 스트립을 코팅하기 위한 방법에 관한 것이다. 강판 또는 강 스트립을 프레스 경화에 의한 부품의 제조 및 추가 가공에 매우 적합하게 하는 강판 또는 강 스트립을 코팅하기 위한 저비용 방법을 제공하기 위해, 전이 금속 또는 전이 금속 화합물이 상부층을 형성하기 위해 코팅의 제거된 표면 상에 후속적으로 증착되는 것이 제안된다. 본 발명은 또한 알루미늄계 코팅을 갖는 상술한 강판 또는 강 스트립으로부터 프레스 경화된 부품을 제조하기 위한 방법에 관한 것이다. The present invention relates to a method for coating a steel sheet or steel strip in which an aluminum-based coating is applied in a hot dip plating process and the surface of the coating has been removed from the naturally occurring aluminum oxide layer. In order to provide a low-cost method for coating a steel sheet or steel strip which makes it very suitable for the manufacture and further processing of parts by press hardening, the transition metal or transition metal compound is removed from the coating to form the top layer. Subsequent deposition on the finished surface is proposed. The present invention also relates to a method for producing press-hardened parts from the above-mentioned steel sheet or steel strip having an aluminum-based coating.

Electroless nickel plating method of a ball valve and nickel-plated ball valve chamber plated by the same

(a) 대용량 볼 밸브를 염산과 황산의 산성 용액, 계면활성제 및 부식방지제의 존재 하에 30분 내지 40분 동안 산탈지한 후, 2단으로 수세하는 단계; (b) 상기 볼 밸브를 약알칼리제로서의 가성소다(NaOH), 탄산소다(Na 2 CO 3 ) 및 삼인산소다(Na 3 PO 4 )로 구성된 군으로부터 선택되는 1종 또는 2종 이상의 혼합물 중에서 5 내지 15V의 전압과 2500 내지 3500A의 전류의 인가에 의해 전해 탈지한 후, 2단으로 수세하는 단계; (c) 상기 볼 밸브를 황산과 산성불화암모늄의 혼합물에 의해 5 내지 15분 동안 산세한 후, 2단으로 수세하는 단계; (d) 상기 볼 밸브를 황산니켈, 차아인산나트륨, 구연산 및 황산탈륨을 포함하여 이루어진 니켈 도금욕에 침적시키고 pH 조정제로 pH 4 내지 6으로 조정되게 하면서 니켈에 의하여 무전해 도금한 후, 3단으로 수세하는 단계; (e) 상기 볼 밸브를 건조시켜 수분을 제거한 후, 350℃ 내지 450℃의 온도에서 열처리하는 단계;를 포함하는 산업용 볼 밸브의 무전해 니켈 도금 방법이 개시되어 있다. (a) degreasing the large volume ball valve for 30-40 minutes in the presence of an acidic solution of hydrochloric acid and sulfuric acid, a surfactant and a corrosion inhibitor, followed by washing in two stages; (b) the ball valve is 5 to 15 V in one or two or more mixtures selected from the group consisting of caustic soda (NaOH), sodium carbonate (Na 2 CO 3 ) and sodium triphosphate (Na 3 PO 4 ) as weak alkalis; Electrolytic degreasing by application of a voltage of and a current of 2500 to 3500 A, followed by washing in two stages; (c) washing the ball valve with a mixture of sulfuric acid and acidic ammonium fluoride for 5 to 15 minutes, followed by washing in two stages; (d) depositing the ball valve in a nickel plating bath comprising nickel sulfate, sodium hypophosphite, citric acid and thallium sulfate and electroless plating with nickel while allowing it to be adjusted to pH 4 to 6 with a pH adjuster; Washing with water; An electroless nickel plating method of an industrial ball valve is disclosed, which comprises; (e) drying the ball valve to remove moisture and then heat treating at a temperature of 350 ° C to 450 ° C.

经表面处理的模具和制造经表面处理的模具的方法

本发明涉及一种经表面处理的模具和制造经表面处理的模具的方法。所述经表面处理的模具(10)具有模具(2)、金属层(4)和碳膜(8)。金属层(4)设置在模具(2)的表面上。金属层(4)包含从镍、铬、钨和黄铜中选出的至少一种成分。碳膜(8)设置在金属层(4)的表面上。金属层(4)包含碳。金属层(4)中的碳含量在从碳膜(8)和金属层(4)之间的边界到金属层(4)的中心的范围内比在从模具(2)和金属层(4)之间的边界到金属层(4)的中心的范围内高。

얇은 유리 상의 유리-관통 비아를 위한 구리 금속화

유리 기판에서 유리-관통 비아를 금속화하는 방법은 유리 기판의 표면을 실란으로 기능화하는 것을 포함한다. 유리 기판은 평균 두께 (t)를 갖고, 상기 두께 (t)를 통해 연장되는 복수의 비아를 포함한다. 상기 방법은 상기 기능화된 표면에 구리 시드 층을 침착하기 위하여 구리 이온을 포함하는 무전해 도금 용액을 적용하는 단계; 상기 복수의 비아 내에 전해질을 배치하는 단계, 여기서 상기 전해질은 복수의 비아 내의 구리 시드 층 상에 침착되는 구리 이온을 포함함; 상기 전해질 내에 전극을 위치시키는 단계; 및 상기 전극과 상기 유리 기판 사이에 전류를 적용함으로써, 복수의 비아 내에서 구리 이온을 구리로 환원시켜, 복수의 비아의 각각이 구리로 충진되고, 구리는 5% 미만의 공극 부피 분율을 갖도록, 상기 전극과 상기 유리 기판 사이에 전류를 적용하는 단계를 더욱 포함한다.

Activation method for silicon substrates

본 발명은 실리콘 기판의 활성화를 위한 활성화 조성물에 관한 것으로, 팔라듐 이온의 소스, 불소 이온의 소스 및 적어도 2종의 방향족 산들을 포함하는 수용액이다. 본 발명은 또한 그 사용 방법 및 선택적으로 이러한 처리된 기판의 후속 금속화를 위한 방법에 관한 것이다. 방법은 반도체 및 태양 전지 제조에 채용될 수 있다.

Material for forming electroless plate, coating solution for adhering catalyst, method for forming electroless plate, and plating method

There is provided a material for forming electroless plate which shows favorable catalyst adhering property, and shows no delamination of catalyst adhering layer from non-conductive base material, no dissolution of catalyst adhering layer into a plating solution, and no discoloration of interface of plate layer with catalyst adhering layer during the catalyst adhering step, development step and other steps. A material for forming electroless plate comprising a non-conductive base material and a catalyst adhering layer provided on the non-conductive base material is constituted so that the catalyst adhering layer should comprise a water-insoluble polyester resin, and surface of the catalyst adhering layer should show a contact angle of 60° or smaller to purified water.

Material for forming electroless plate, coating solution for adhering catalyst, method for forming electroless plate, and plating method

A material for forming electroless plate shows favorable catalyst adhering property, and shows no delamination of catalyst adhering layer from non-conductive base material, no dissolution of catalyst adhering layer into a plating solution, and no discoloration of interface of plate layer with catalyst adhering layer during the catalyst adhering step, development step and other steps. The material includes a non-conductive base material and a catalyst adhering layer, provided on the non-conductive base and including a water-insoluble polyester resin The catalyst adhering layer shows a contact angle of 60° or smaller to purified water.

For the coating of turbine part

本发明涉及用于涡轮部件的涂层。一种方法和涡轮部件，该涡轮部件包括具有基质层的涂层，该基质层包括耐高温疏水聚硅氧烷填料，其中，涂层具有优良的机械强度和耐热性。

Method for decreasing resistance of copper coating layer using annealing

본 발명은 금속염, 착화제, 환원제, pH조정제 및 촉매를 포함하고 추가적으로 안정제, 가속제, 광택제 및 계면활성제 등을 포함할 수 있는 무전해 동도금액을 이용하여 무전해 도금을 실시하여 동피막을 형성하고, 형성된 동피막에 대하여 일정 조건, 시간 및 온도로 급속열처리(annealing)함으로써, 배선적용 물질의 주요 요구특성인 저항을 감소시킬 수 있는 급속열처리 공정을 이용한 동피막의 저항 감소 방법에 관한 것이다. The present invention forms a copper film by electroless plating using an electroless copper plating solution that includes a metal salt, a complexing agent, a reducing agent, a pH adjusting agent and a catalyst, and may further include a stabilizer, an accelerator, a brightener and a surfactant. In addition, the present invention relates to a method for reducing the resistance of a copper film using a rapid heat treatment process capable of reducing the resistance, which is a major requirement of the wiring application material, by rapidly annealing the formed copper film at a predetermined condition, time and temperature.

Method for nikel coating of magnesiumalloy plate

본 발명은 마그네슘합금 판재에 균일한 니켈 금속 도금층을 형성시키고, 밀착성을 높이기 위해 탈지, 에칭, 포스트 에칭 등과 같은 전처리를 한 다음 니켈도금방법을 이용하여 표면처리하는 것을 특징으로 하는 마그네슘합금 판재의 니켈도금방법에 관한 것이다. The present invention forms a uniform nickel metal plating layer on a magnesium alloy sheet, and pretreatment such as degreasing, etching, post etching, etc. in order to increase adhesion, and then surface treatment using a nickel plating method, the nickel of the magnesium alloy sheet It relates to a plating method. 따라서 본 발명은 기존에 문제시 되어진 핀홀과 소재 가공에 의한 미도금과 밀착 불량을 2번에 걸친 에칭 공정을 통하여 현저히 개선함은 물론이고 내식성 향상과 고경도 및 내마모성을 강화시키는 효과가 가능하고, 또한 니켈, 크롬 또는 귀금속 등과 같은 소재를 사용하여 전기도금처리를 실시하여 마그네슘 판재의 장식성, 내식성, 내마모성 및 고경도의 물성을 향상시킴으로써, 정보통신제품, 레저용품, 광학기기, 디지털 카메라. 자동차, 항공기 부품, 건자재 등과 같은 다양한 용도로의 적용이 가능하여 그 수요가 대폭 증대할 것으로 기대된다. Therefore, the present invention can significantly improve the unplating and adhesion defects due to pinholes and material processing, which have been a problem in the past, through two etching processes, as well as improving corrosion resistance, high hardness, and abrasion resistance. In addition, electroplating is performed using materials such as nickel, chromium or precious metals to improve the decoration, corrosion resistance, abrasion resistance, and high hardness properties of magnesium plates, thereby providing information and communication products, leisure products, optical devices, and digital cameras. It can be applied to various purposes such as automobile, aircraft parts, construction materials, etc., and the demand is expected to increase significantly. 마그네슘합금 판재, 무전해 니켈도금, 알칼리 수용액, 초음파 탈지처리, 에 칭, 포스트(Post) 에칭, 활성화, 베이킹(Baking), 스트라이크(Strike) 도금 Magnesium Alloy Plate, Electroless Nickel Plating, Alkali Aqueous Solution, Ultrasonic Degreasing, Etching, Post Etching, Activation, Baking, Strike Plating

Method for coating metallic surfaces of substrates, and objects coated according to said method

본 발명은 표면을 코팅하는 방법, 상응하는 코팅, 및 이러한 방법에 의해 코팅된 물품의 용도에 관한 것이다. 본 발명에 따르면, I. 세정된 금속성 표면을 지니는 기재를 제공하는 단계; II. 금속성 표면을 분산액 및/또는 현탁액 형태의 수성 조성물과 접촉시키고 코팅하는 단계; IX. 적용가능한 경우, 유기 코팅을 헹구는 단계; 및 X. 유기 코팅을 건조시키고/거나 굽는 단계; 또는 V. 적용가능한 경우, 유기 코팅을 건조시키고, 동일하거나 추가의 코팅 조성물로 코팅한 후 건조시키고/거나 굽는 단계 를 포함하거나 이로 이루어진, 기재의 금속성 표면을 코팅하기 위한 방법에 의해 문제가 해결된다. 적용가능한 경우, 유기 코팅을 건조시키고, 동일하거나 추가의 코팅 조성물로 코팅한 후 건조 및/또는 굽는 것은, 단계 II에서, 코팅이 분산액 및/또는 현탁액 형태의 수성 조성물로 수행되고, 하나 이상의 음이온성 고분자전해질이 생성된 혼합물의 총 질량에 대해 0.01중량% 내지 5.0중량%의 양으로 필름-형성 폴리머의 분산액 및/또는 2중량% 내지 40중량%의 고형물 함량 및 10nm 내지 1000nm의 평균 입도를 지니는 필름-형성 무기 입자의 현탁액에 첨가되고, 수성 조성물은 4 내지 11 범위의 pH 값을 지니고, 수성 조성물은, 전처리 스테이지로부터 및/또는 단계 II에서의 접촉으로부터 생성되고 금속성 표면으로부터 용출된 양이온들을 결합하는 이오노겐성 겔을 기반으로 한 코팅을 형성시킴을 특징으로 한다. The present invention relates to methods for coating surfaces, corresponding coatings, and the use of articles coated by such methods. According to the invention, I. providing a substrate having a cleaned metallic surface; II. Contacting and coating the metallic surface with an aqueous composition in the form of a dispersion and / or suspension; IX. Rinsing the organic coating, if applicable; And X. drying and / or baking the organic coating; or V. If applicable, drying the organic coating, coating with the same or additional coating composition, and then drying and / or baking The problem is solved by a method for coating a metallic surface of a substrate, comprising or consisting of. If applicable, drying the organic coating, coating with the same or additional coating composition, followed by drying and / or baking, in step II, the coating is carried out with an aqueous composition in the form of a dispersion and / or suspension, and at least one anionic A film having a dispersion of film-forming polymer and / or a solids content of 2% to 40% by weight and an average particle size of 10nm to 1000nm in an amount of 0.01% to 5.0% by weight relative to the total mass of the resulting mixture of polymer electrolytes -Is added to the suspension ...

Method for Manufacturing for Ni/P Alloy Plated Polyacrylonitrile Fiber by Electroless Plating Method and Bipolar Plate for Fuel Cells Using the Same

본 발명은 반응기에 금속 전구체와 일정한 길이로 절단한 마이크로 크기 직경의 폴리아크릴로니트릴 섬유를 투입하여 상기 폴리아크릴로니트릴 섬유에 금속 나노 입자를 도입하는 제1단계 및 제1단계에서 제조된 금속 나노 입자가 도입된 폴리아크릴로니트릴 섬유에 니켈/인 합금으로 무전해 도금하는 제2단계를 포함하는 무전해 도금법에 의한 니켈/인 합금 도금 폴리아크릴로니트릴 섬유의 제조방법 및 이를 이용하여 제조된 니켈/인 합금 도금 폴리아크릴로니트릴 섬유 및 에폭시-탄소 복합체를 포함하는 연료전지용 분리판에 관한 것이다.

A kind of preparation method of Mg alloy surface richness iron coating

一种镁合金表面富铁涂层的制备方法，它涉及一种在镁合金表面制备涂层的方法。本发明的目的是要解决现有镁合金的耐腐蚀性能差的问题。方法：一、制备打磨后的镁合金；二、制备表面沉积铁后的镁合金；三、溶剂热处理，得到表面含有富铁涂层的镁合金。本发明制备的表面含有富铁涂层的镁合金的腐蚀电位为‑0.8V～‑0.5V、腐蚀电流密度为1×10 ‑6 A/cm 2 ～1×10 ‑8 A/cm 2 ，极化电阻1000Ω·cm 2 ～40000Ω·cm 2 。本发明适用于镁合金表面富铁涂层的制备。

METHOD FOR ELECTRICAL CONTACT MATERIALS INCLUDING AG PLATED CNTs

본 발명은 은이 코팅된 탄소나노튜브가 함유된 전기접점재료의 제조방법에 관한 것으로, 더욱 상세하게는 (a) 탄소나노튜브를 질산은 용액내에 넣고 초음파 분산 및 산처리를 수행하는 단계; (b) 상기 a단계를 통해 초음파 분산 및 산 처리된 탄소나노튜브를 세척하는 단계; (c) 세척된 상기 탄소나노튜브를 염화주석과 염산의 혼합용액 및 염화 팔라늄과 염산의 혼합용액에 순차적으로 혼합한 후 각각 초음파를 가하여 주석과 팔라늄을 상기 탄소나노튜브의 표면에 결합시키는 단계; (d) 질산은 수용액과 암모니아 수용액을 넣어 무색이 될때까지 혼합한 다음 상기 c단계에서 제조된 상기 탄소나노튜브를 혼합하는 단계; (e) 글리옥실산 수용액과 수산화나트륨 수용액을 혼합한 다음 탈이온수로 세척하여 은이 코팅된 탄소나노튜브를 제조하는 단계; 및 (f) 은이 코팅된 탄소나노튜브와 은, 구리, 니켈 및 금으로 이루어진 군에서 선택된 1종 이상의 금속이 함유된 합금을 혼합하여 분말 혼합체를 제조하는 단계;를 포함하는 것을 특징으로 하는 은이 코팅된 탄소나노튜브가 함유된 전기접점재료의 제조방법에 관한 것이다.

Coating for turbine parts

FIELD: technological processes. SUBSTANCE: invention relates to a coating for a turbine parts, namely, to a hydrophobic erosion-resistant coating applied on part of an axially rotating mechanism used under the action of gas saturated with water, and to application of this coating. Said coating has a metal matrix with a polysiloxane filler distributed in the coating thickness. After applying the said coating annealing of the filler is carried out ensuring high temperature stability of the polysiloxane filler. EFFECT: provided is the required balance of heat resistance and hydrophobic properties of the coating and increased is its service life. 14 cl, 3 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 605 872 C2 (51) МПК C25D 3/12 (2006.01) C25D 5/50 (2006.01) F01D 5/28 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2013156624/02, 19.12.2013 (24) Дата начала отсчета срока действия патента: 19.12.2013 Приоритет(ы): (30) Конвенционный приоритет: (43) Дата публикации заявки: 27.06.2015 Бюл. № 18 (45) Опубликовано: 27.12.2016 Бюл. № 36 (73) Патентообладатель(и): Дженерал Электрик Текнолоджи ГмбХ (CH) 2 6 0 5 8 7 2 (56) Список документов, цитированных в отчете о поиске: US 2002098083 A1, 25.07.2002. SU 1027181 A, 07.07.1983. DE 2522130 B, 28.10.1976. EP 1870485 A1, 26.12.2007. EP 2233534 A1, 29.09.2010. 2 6 0 5 8 7 2 R U Стр.: 1 наполнителем, распределенным по толщине покрытия. После нанесения упомянутого покрытия проводят отжиг наполнителя с обеспечением повышенной температуростойкости полисилоксанового наполнителя. Обеспечивается требуемый баланс температуростойкости и гидрофобности покрытия, и повышается его долговечность. 2 н. и 12 з.п. ф-лы, 3 ил. C 2 C 2 Адрес для переписки: 191036, Санкт-Петербург, а/я 24 "НЕВИНПАТ" (54) ПОКРЫТИЯ ДЛЯ ДЕТАЛЕЙ ТУРБИНЫ (57) Реферат: Изобретение относится к покрытию деталей турбины, а именно к гидрофобному эрозионностойкому покрытию, нанесенному на деталь аксиально ...

Process for fabrication of Carbon NanoFiber/Cu composite powder by Electroless Cu plating

본 발명은 무전해 구리 도금공정에 의해서 탄소나노섬유(CNF)의 표면을 구리(Cu)로 도금함으로써 탄소나노섬유(CNF)/구리(Cu) 복합분말을 제조하는 무전해 구리 도금공정에 의한 탄소나노섬유(CNF)/구리(Cu) 복합분말 제조방법에 관한 것이다. 본 발명의 무전해 구리 도금공정에 의한 탄소나노섬유(CNF)/구리(Cu) 복합분말 제조방법은 분말을 분산시키고 친수처리하는 제 1 공정(100)과, 상기 제 1 공정(100)을 거친 분말을 촉매화처리하는 제 2 공정(200)과, 상기 제 2 공정(200)을 거친 분말을 활성화처리하는 제 3 공정(300)과, 상기 제 3 공정(300)을 거친 분말을 무전해 구리도금하는 제 4 공정(400)과, 상기 제 4 공정(400)을 거친 분말을 건조시키는 제 5 공정(500)과, 상기 제 5 공정(500)을 거친 분말을 열처리하는 제 6 공정(600)을 포함하여 구성되며, 상기 제 1 공정(100)에서의 분말은 탄소나노섬유(Carbon NanoFiber)임을 특징으로 한다. 이와 같은 본 발명에 의하면, 공정이 간편하며 제조비를 절감하여 탄소나노섬유(CNF)/구리(Cu) 복합분말을 제조할 수 있는 이점이 있다. 탄소나노섬유, 구리, 복합분말, 촉매화, 활성화, 무전해 도금, 열처리